1. A method comprising:providing a wafer comprising a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region;
bonding the wafer to a transparent substrate that comprises a wavelength converting material disposed in glass;
removing the growth substrate;
after bonding the wafer to the transparent substrate, processing the wafer into multiple light emitting devices;
testing the wafer after processing the wafer into multiple light emitting devices and before dicing the wafer; and
adjusting an amount of wavelength converting material corresponding to each light emitting device according to the results of the testing.