US Patent No. 10,020,431

SEALED SEMICONDUCTOR LIGHT EMITTING DEVICE


Patent No. 10,020,431
Issue Date July 10, 2018
Title Sealed Semiconductor Light Emitting Device
Inventorship Jipu Lei, San Jose, CA (US)
Stefano Schiaffino, Pleasanton, CA (US)
Alexander H. Nickel, Santa Clara, CA (US)
Assignee Lumileds LLC, San Jose, CA (US)

Claim of US Patent No. 10,020,431

1. A method comprising:providing a wafer of light emitting semiconductor devices, each light emitting semiconductor device comprising an n-type region, a p-type region, a first metal contact in direct contact with the n-type region, and a second metal contact in direct contact with the p-type region;
forming a first metal layer configured to provide support to the light emitting semiconductor device during later processing on the first contact of each light emitting semiconductor device;
forming a second metal layer configured to provide support to the light emitting semiconductor device during later processing on the second metal contact of each light emitting semiconductor device;
surrounding the first metal layer with an insulating layer to fill a first opening between the first metal layer and the second metal layer;
planarizing the insulating layer, first metal layer and second metal layer along a same plane;
positioning the wafer of light emitting semiconductor devices on and in contact with a wafer of support substrates, the wafer of support substrates comprising a plurality of metal regions formed on a surface of a body and separated by gaps filled with ambient gas, a bottom of each gap comprising a surface that is not wettable by the metal regions; and
heating the wafer of light emitting semiconductor devices positioned on the wafer of support substrates and reflowing any portions of the plurality of metal regions in contact with a surface of the insulating layer facing the wafer of support substrates into contact with one of the first metal layer and the second metal layer and off of the surface of the insulating layer, leaving the plurality of metal regions in contact with only one of the first metal layer and second metal layer.