US Patent No. 10,015,879

SILICA CONTENT SUBSTRATE SUCH AS FOR USE HARSH ENVIRONMENT CIRCUITS AND HIGH FREQUENCY ANTENNAS


Patent No. 10,015,879
Issue Date July 03, 2018
Title Silica Content Substrate Such As For Use Harsh Environment Circuits And High Frequency Antennas
Inventorship Daniel Warren Hawtof, Corning, NY (US)
Archit Lal, Ithaca, NY (US)
Jen-Chieh Lin, Zhubei (TW)
Gary Richard Trott, San Mateo, CA (US)
Assignee Corning Incorporated, Corning, NY (US)

Claim of US Patent No. 10,015,879

1. A device comprising:a high silica content substrate comprising:
a first major surface;
a second major surface opposite the first major surface;
at least 90% SiO2 by weight;
an average thickness between the first major surface and the second major surface of less than 1 mm;
wherein the first major surface comprises a plurality raised features and a plurality of recessed features formed in the first major surface and integrally part of the substrate, wherein at least some of the raised features extend from the surface a distance of at least 50 angstroms further than the recessed features;
a first group of a plurality of raised elongate features formed in the first major surface and extending in the direction of the width, wherein each raised elongate feature of the first group has a length and a width and the length is at least ten times larger than width, wherein the width of each elongate feature of the first group is between 10 mm and 2 ?m;
a second group of a plurality of raised elongate features formed in the first major surface and extending in the direction of the length, wherein at least some of the raised elongate features of the second group intersect raised elongate features of the first group, wherein each raised elongate feature of the second group has a length and a width and the length is at least ten times larger than width, wherein the width of each raised elongate feature of the second group is between 10 mm and 2 ?m;
wherein the substrate has asymmetry in flexibility; and
a layer of metal material supported by the first major surface, wherein the layer of metal material forms a pathway on the first major surface and is configured to conduct current along the pathway, wherein the layer of metal material extends over at least one recessed feature and at least one raised feature.