US Pat. No. 10,249,936

ANTENNA DEVICE AND WIRELESS APPARATUS

AGC Inc., Chiyoda-ku (JP...

1. An antenna device, comprising:a ground plane;
a first resonator extending in a direction at a distance from the ground plane and connected to a feeding point; and
a second resonator positioned at a distance from the first resonator,
wherein the ground plane includes an edge portion formed along the second resonator, such that a resonance current is formed on the first resonator and the ground plane, the second resonator is configured to function as a radiation conductor by resonance of the first resonator, a tip portion of the first resonator is positioned near a metallic part, the second resonator has a plurality of electrical lengths with differing resonance frequencies and has a plurality of radiating elements including a first radiating element and a second radiating element, and the second radiating element includes a turnaround portion formed between the first radiating element and the ground plane and not formed between the first resonator and the ground plane when viewed from a direction perpendicular to the ground plane.

US Pat. No. 10,249,935

HANDRAIL WI-FI ENCLOSURE

TESSCO Communications Inc...

1. An enclosure for an access point for attachment to a handrail, comprising:a) a first half-shell including a first peripheral flange portion and a second half-shell including a second peripheral flange portion, the first half-shell and the second half-shell being attached together along the respective first peripheral flange portion and the second peripheral flange portion, the first half-shell and the second half-shell together forming the enclosure with a cavity configured to enclose an access point to be disposed within the enclosure;
b) a mounting plate disposed between the first half-shell and the second half-shell, the mounting plate including a peripheral edge portion coextensive with the first and second peripheral flange portions, the peripheral edge portion including first and second sides opposed to the respective first and second peripheral flange portions; and
c) a seal disposed along the first and second sides of the peripheral edge portion, the seal on the first side being sandwiched between the first peripheral flange portion and the first side, the seal on the second side being sandwiched between the second peripheral flange portion and the second side.

US Pat. No. 10,249,934

WIRELESSLY-COMMUNICABLE MEMORY CARD

TOSHIBA MEMORY CORPORATIO...

1. A memory card, comprising:a substrate;
a nonvolatile memory on the substrate;
a memory controller on the substrate and configured to control access to the nonvolatile memory;
an interface terminal for external wired connection, on the substrate;
an antenna, a region surrounded by the antenna including a first region that overlaps with the substrate and a second region that does not overlap with the substrate; and
a communication controller on the substrate, electrically connected to the antenna, and configured to wirelessly communicate with an external device through the antenna, using power generated at the antenna by an electromagnetic induction caused by the external device.

US Pat. No. 10,249,933

ANTENNA DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

Samsung Electronics Co., ...

1. An antenna device for an electronic device including a first housing and a second housing rotatably coupled to the first housing about a hinge axis, the antenna device comprising:an antenna carrier mounted on an inner face of the first housing;
a radiation conductor disposed in the first housing; and
a reflection member disposed adjacent to the radiation conductor in the first housing,
wherein,
radio waves transceived by the radiation conductor are radiated via the reflection member,
the antenna carrier includes a body portion mounted on the inner face of the first housing and an extension portion protruding from a side face of the body portion, and
the radiation conductor and the refection member are mounted on the side face and the extension portion, respectively.

US Pat. No. 10,249,932

BOLLARD LIGHTING FIXTURE WITH INTEGRATED ANTENNA

TESSCO Communications Inc...

1. A bollard light fixture, comprising:a) a bollard housing including a vertical hollow portion;
b) a plurality of antennas disposed within the vertical hollow portion, the plurality of antennas are configured to propagate RF signal to a user's device and to receive RF signal from the user's device
c) the plurality of antennas are grouped into vertical levels, the antennas at each level are directed toward X- and Y-axes directions.

US Pat. No. 10,249,931

ANTENNA MODULE AND WIRELESS CONTROL SYSTEM INCLUDING THE SAME

LG INNOTEK CO., LTD., Se...

1. An antenna module comprising:a first antenna unit;
a second antenna unit, the second antenna unit and the first antenna unit being symmetrically disposed with respect to a wall interposed therebetween; and
an antenna connection unit that penetrates the wall, is fitted to a hole formed on the wall and connects the first antenna unit with the second antenna unit,
wherein the first antenna unit is connected to one end of the antenna connection unit through a first coupler, and the second antenna unit is connected to the other end of the antenna connection unit through a second coupler;
wherein the antenna connection unit comprises an antenna line, an insulating layer that surrounds the antenna line, a ground layer that surrounds the insulating layer, and a sheath that surrounds the ground layer;
wherein each of the first antenna unit and the second antenna unit includes a ground, a reflection plate disposed on the ground and an antenna disposed on the reflection plate,
wherein each of the first coupler and the second coupler includes a female section and a male section, and the female section and the male section are coupled by being engaged with each other,
wherein one of the female section and the male section in each of the first coupler and the second coupler is connected to the ground in each of the first antenna unit and the second antenna unit, respectively, and
wherein the other of the female section and the male section in each of the first coupler and the second coupler is connected to the ground layer in the antenna connection unit.

US Pat. No. 10,249,930

TUNABLE ELECTROMAGNETIC COUPLER AND MODULES AND DEVICES USING SAME

SKYWORKS SOLUTIONS, INC.,...

1. An electromagnetic coupler comprising:a first transmission line extending between an input port and an output port;
a second transmission line disposed adjacent to the first transmission line and extending between a coupled port and an isolation port, the second transmission line configured to provide a coupled signal at the coupled port responsive to receiving an input signal at the input port, an amplitude of the coupled signal being related to an amplitude of the input signal by a coupling factor;
a tuning element disposed adjacent at least one of the first transmission line and the second transmission line, the tuning element being electromagnetically coupled to the at least one of the first transmission line and the second transmission line; and
an adjustable impedance coupled between the tuning element and a reference node and configured to adjust the coupling factor.

US Pat. No. 10,249,929

MULTIMODE DIRECTIONAL COUPLER

The United States of Amer...

1. An apparatus, comprising:a primary waveguide having first longitudinal axis and a first port at one end and a second port at the other end and configured to propagate a fundamental signal from the first port to the second port;
a secondary waveguide having a first port at one end and a second port at the other end, the secondary waveguide configured to extract a second or higher harmonic signal from the primary waveguide, propagate the second or higher harmonic signal through the secondary waveguide, and exit the second or higher harmonic signal through the second port, a portion of said secondary waveguide having a longitudinal axis parallel to the first longitudinal axis; and
a common wall shared by the primary and secondary waveguides such that the secondary waveguide is configured to extract the second or higher harmonic signal from the primary waveguide with minimum perturbation to the fundamental signal, wherein the common wall comprises a metal that is different from the metal of the primary or secondary waveguides or both.

US Pat. No. 10,249,928

DIVIDER AND SIGNAL GENERATION SYSTEM USING THE SAME

ANRITSU CORPORATION, Kan...

1. A divider comprising:an input terminal;
a plurality of output terminals;
a divide unit that divides a high frequency signal input to the input terminal and outputs the divided signals; and
a plurality of reflected wave blocking units that are respectively connected to a plurality of divide unit outputs and are configured to attenuate reflected waves reflected outside of the plurality of output terminals, each of the reflected wave blocking units being configured to attenuate the reflected waves by 3 dB-10 dB,
wherein the reflected waves are components of the input high frequency signal or the divided signals resulting from defective terminal contacts or improper impedance matching,
wherein the divide unit includes the plurality of divide unit outputs and outputs the divided signals from the plurality of divide unit outputs, and
wherein outputs from the plurality of reflected wave blocking units are output from the plurality of output terminals.

US Pat. No. 10,249,927

COCHLEA-BASED MICROWAVE CHANNELIZER

The United States of Amer...

1. A system comprising:an RF input coupled to a plurality of channel filters through an inductive manifold, wherein each of the plurality of channel filters is configured as a series resonator and has a frequency of greater than about 1 GHz, wherein a closest one of the plurality of channel filters has a highest frequency of the plurality of channel filters and the frequency of each of the plurality of channel filters decreases as a distance of the plurality of channel filters from the RF input increases, wherein components of each of the plurality of channel filters are configured using high-Q transmission lines.

US Pat. No. 10,249,926

EMBEDDED BROADBAND GLASS COPLANAR WAVEGUIDE COUPLER

GM GLOBAL TECHNOLOGY OPER...

16. An electromagnetic coupler for coupling electromagnetic antenna signals from an area on an inside surface of an outer glass layer or an inner glass layer of a vehicle windshield to an area on an outside surface of the outer glass layer or the inner glass layer, said coupler comprising:a first co-planar waveguide (CPW) formed on the one side of the substrate and including a first conductive plane, said first CPW including a first narrow CPW section defined in the first plane by removed metal portions of the first plane and a first wide CPW section defined in the first plane by removed metal portions of the first plane, said first CPW further including a first interdigital capacitor extending across the first wide CPW section, wherein the first narrow and wide CPW sections are electrically coupled, and wherein the first narrow CPW section is a straight section; and
a second co-planar waveguide (CPW) formed on the opposing side of the substrate and including a second conductive plane, said second CPW including a second narrow CPW section defined in the second plane by removed metal portions of the second plane and a second wide CPW section defined in the second plane by removed metal portions of the second plane, said second CPW further including a second interdigital capacitor extending across the second wide CPW section, wherein the second narrow and wide CPW sections are electrically coupled and wherein the second narrow CPW section is a straight section.

US Pat. No. 10,249,925

DIELECTRIC WAVEGUIDE BUNDLE INCLUDING A SUPPORTING FEATURE FOR CONNECTING FIRST AND SECOND SERVER BOARDS

Intel Corporation, Santa...

14. An apparatus comprising:a first server board and a second server board, wherein the first and second server boards each include a plurality of ports; and
a waveguide bundle connected to the ports of the first and second server boards, wherein the waveguide bundle includes:
a plurality of waveguides, wherein each of the waveguides include a respective dielectric material;
an outer shell; and
a supporting feature within the outer shell, wherein the plurality of waveguides are arranged away from the outer shell and separate from each other within the outer shell by the supporting feature, wherein the supporting feature includes multiple plastic cross members arranged along a length of the outer shell, and the plurality of waveguides are arranged within the plastic cross members.

US Pat. No. 10,249,924

COMPACT VIA STRUCTURES AND METHOD OF MAKING SAME

INTEL CORPORATION, Santa...

1. A device comprising:a substrate including a layer of first dielectric material;
a sidewall structure forming a hole region that extends at least partially through the layer of first dielectric material of the substrate, the sidewall structure comprising second dielectric material;
a first via extending at least partially through the layer of first dielectric material, the first via adjacent to the sidewall structure; and
a second via extending at least partially through the layer of first dielectric material, the second via adjacent to the sidewall structure;
wherein a cross-sectional profile of the first via conforms to a sector of a first circle, wherein a cross-sectional profile of the second via conforms to a sector of a second circle offset from the first circle, and wherein a cross-sectional profile of the sidewall structure conforms to a sector of a third circle overlapping both the first circle and second circle, wherein a diameter of the first circle is equal to a diameter of the second circle and equal to a diameter of the third circle and wherein the third circle is part of the hole region formed by the sidewall structure having the second dielectric material located between the first via and second via.

US Pat. No. 10,249,923

ULTRA WIDE BAND FIXED PHASE SHIFTER BASED ON CAPACITIVE LOAD AND HAVING N PHYSICALLY SEPARATED PHASE SHIFT UNITS WITH ORTHOCOUPLERS THEREIN

NANJING MILEWEI CORP., N...

1. An ultra wide band fixed phase shifter based on capacitive loads, comprising:N physically separated phase shift units, (N?1) phase shift states being implemented by accessing respective signal input ends and respective signal output ends of different phase shift units, wherein:
each phase shift unit comprises a respective orthocoupler, respective first and second transmission lines, and respective first and second capacitive loads, wherein the corresponding orthocoupler comprises an input end, a coupling end, a direct-connection end and an isolation end, one end of the respective first transmission line serves as the signal input end of the respective phase shift unit and the other end is connected with the input end of the corresponding orthocoupler, one end of the respective second transmission line serves as the signal output end of the respective phase shift unit and the other end is connected with the isolation end of the corresponding orthocoupler;
one end of the first capacitive load is connected with the coupling end of the corresponding orthocoupler and the other end is grounded;
one end of the second capacitive load is connected with the direct-connection end of the corresponding orthocoupler and the other end is grounded,
wherein the respective orthocoupler is an ultra wide band orthocoupler cascaded by corresponding spiral inductor coupling units including two or more stages;
each stage of the two or more stages of spiral inductor coupling unit comprises two mutually coupled spiral inductors;
two adjacent stages of the two or more stages of spiral inductor coupling units are respectively connected in series with one of the two mutually coupled spiral inductors in a post-stage of the two or more stages of the spiral inductor coupling units through the two mutually coupled spiral inductors in a prior-stage of the two or more stages of the spiral inductor coupling units to implement a prior-post stage cascade;
one end of one spiral inductor cascaded in a first stage of the two or more stages of the spiral inductor coupling units in the respective orthocoupler and located outside the respective orthocoupler is the coupling end of the respective orthocoupler and one end of the other spiral inductor located outside the respective orthocoupler is the input end of the respective orthocoupler;
one end of one spiral inductor cascaded in a last stage of the two or more stages of the spiral inductor coupling units in the respective orthocoupler and located outside the respective orthocoupler is the direct-connection end of the respective orthocoupler and one end of the other spiral inductor located outside the respective orthocoupler is the isolation end of the respective orthocoupler; and
the coupling interval or microstrip band width of each spiral inductor coupling unit in the respective orthocoupler from the exterior of the respective orthocoupler to the interior of the respective orthocoupler decreases gradually.

US Pat. No. 10,249,922

PARTIAL DIELECTRIC LOADED SEPTUM POLARIZER

VIASAT, INC., Carlsbad, ...

1. A waveguide device comprising:a first layer comprising an upper section of a first common waveguide and a first divided waveguide portion;
a second layer comprising a lower section of the first common waveguide and a second divided waveguide portion; and
a third layer between the first layer and the second layer, the third layer comprising an intermediate section of the first common waveguide, and further comprising a first conductive septum dividing an opening in the first common waveguide to define the first divided waveguide portion and the second divided waveguide portion, wherein:
the first layer further comprises an upper section of a second common waveguide and a third divided waveguide portion;
the second layer further comprises a lower section of the second common waveguide and a fourth divided waveguide portion; and
the third layer further comprising an intermediate section of the second common waveguide, and a second conductive septum dividing an opening in the second common waveguide to define the third divided waveguide portion and the fourth divided waveguide portion.

US Pat. No. 10,249,920

BATTERY CELL ASSEMBLY

LG Chem, Ltd., Seoul (KR...

1. A battery cell assembly, comprising:a pouch battery cell having an external pouch housing and first and second electrical terminals extending from the external pouch housing; the external pouch housing having a central housing pouch portion and a peripheral lip member extending around a periphery of the central housing pouch portion; the peripheral lip member having a first peripheral lip pouch portion with a first extension pouch portion, a first arcuate-shaped pouch portion, and a first end pouch portion; the first extension pouch portion extending outwardly from the central housing pouch portion in a first direction, the first arcuate-shaped pouch portion being coupled to and between the first extension pouch portion and the first end pouch portion; and
a first tube contacting the first extension pouch portion and the first arcuate-shaped pouch portion of the peripheral lip member of the external pouch housing, the first arcuate-shaped pouch portion being wrapped around a portion of a periphery of a first tube portion of the first tube, the first end pouch portion of the peripheral lip pouch portion of the peripheral lip member having a weld interface with a top surface of the first extension pouch portion such that the first peripheral lip pouch portion extends 360 degrees to define and enclose a first interior space that is sized and shaped to receive the first tube portion of the first tube therein, and the first tube portion of the first tube being disposed within the first interior space; and
wherein the external housing is constructed of a sheet, the sheet being formed by laminating a polymer film on a metal sheet made of aluminum.

US Pat. No. 10,249,919

BATTERY CELL HAVING IMPROVED COOLING PERFORMANCE

LG Chem, Ltd., (KR)

1. A battery cell configured to have a structure in whichan electrode stack, which is configured to have a structure in which positive electrodes and negative electrodes are stacked in a height direction on a basis of a ground in a state in which separators are disposed respectively between the positive electrodes and the negative electrodes, is mounted in a battery case in a sealed state,
the battery case is formed in a pipe shape having a hollow part, the battery case having a top surface and a bottom surface opposite the top surface, the hollow part extending completely through the battery case and completely through the top and bottom surfaces, and
the electrode stack is formed in a shape corresponding to the shape of the battery case,
wherein the battery cell has a positive electrode input/output terminal and a negative electrode input/output terminal protruding from opposite ends of the battery case.

US Pat. No. 10,249,918

BATTERY PACKS FOR ELECTRIC TOOLS

MAKITA CORPORATION, Anjo...

1. A battery pack for detachably mounting to a tool main body of an electric tool for serving as a power source, the battery pack comprising:a case;
a battery device disposed within the case, the battery device including a cell holder configured to accommodate a plurality of battery cells that are dischargeable and chargeable, the cell holder including a plurality of cell accommodation portions, each one of the plurality of cell accommodation portions being contoured to an outer peripheral surface of one of the plurality of battery cells and configured to accommodate one of the plurality of battery cells;
an intervening member attaching portion recessed in at least one cell accommodation portion and contoured to a shape of the outer peripheral surface of one of the plurality of battery cells; and
an intervening member and a thermistor disposed between the cell holder and at least one of the plurality of battery cells, the thermistor including a temperature detection element and conductive wires, the intervening member and the thermistor being arranged in an order of the intervening member and the thermistor from a side of the cell holder, the thermistor being attached at a proximal end to the cell holder and having an elongated length contoured to the shape of the outer peripheral surface of one of the plurality of battery cells, the temperature detection element being disposed on a distal end of the thermistor and the conductive wires extending across the contoured elongated length of the thermistor, the proximal end of the thermistor curving away from the outer peripheral surface of the one of the plurality of battery cells and towards the cell holder, wherein:
the intervening member is entirely disposed along the contoured intervening member attaching portion, and disposed between the intervening member attaching portion and the outer peripheral surface of the battery cell accommodated in the cell accommodation portion; and
the temperature detection element has an electric resistance that changes depending on a temperature, and the temperature detection element is supported by the cell holder and the intervening member so as to elastically contact with the at least one of the plurality of battery cells.

US Pat. No. 10,249,917

POWER SOURCE DEVICE

YAZAKI CORPORATION, Toky...

1. A power source device comprising:a battery assembly comprising a plurality of battery cells which are aligned;
a bus bar module formed by linking a plurality of bus bar storing portions which store a plurality of bus bars which link and connect electrodes of the battery assembly;
a smoke exhausting duct provided on one side of the battery assembly; and
a control board provided on a portion of the smoke exhausting duct and electrically connected to a voltage detection terminal for detecting a voltage of each of the battery cells, a seat portion of the control board covering the portion of the smoke exhausting duct and defining an interior surface of the smoke exhausting duct,
wherein the portion of the smoke exhausting duct is in a flattened shape having side walls of a smaller height and a wide portion of a larger width in comparison with another portion of the smoke exhausting duct.

US Pat. No. 10,249,916

CONNECTOR BARREL FOR A BATTERY MODULE

Johnson Controls Technolo...

1. A battery module, comprising:a housing defined by one or more walls, wherein a wall of the housing comprises an opening configured to create a passageway between an interior of the housing and an exterior of the housing; and
a connector barrel disposed within the opening, wherein the connector barrel is a hollow conduit comprising a first open end opposite a second open end, and wherein the connector barrel is configured to receive a low voltage signal connector through the first open end and a vehicle control module connector through the second open end, and wherein an external surface of the connector barrel comprises a pair of protrusions configured to enable intimate contact between the wall of the housing and the connector barrel.

US Pat. No. 10,249,915

METHOD OF MANUFACTURING NONAQUEOUS SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A method of manufacturing a nonaqueous secondary battery, the method comprising:constructing a battery assembly with a positive electrode, a negative electrode, and a nonaqueous electrolytic solution, the nonaqueous electrolytic solution containing an unsaturated carbonate;
activating the battery assembly to decompose a portion of the unsaturated carbonate such that a percentage of the unsaturated carbonate is adjusted to be within a range of 0.5 mass % to 0.9 mass % with respect to 100 mass % of a total amount of the nonaqueous electrolytic solution;
self-discharging the battery assembly to measure a voltage drop amount; and
determining whether internal short-circuit occurs in the battery assembly based on the voltage drop amount.

US Pat. No. 10,249,914

SECONDARY CELL STATE DETECTOR

YAZAKI CORPORATION, Toky...

1. A secondary cell state detector comprising:a plurality of secondary cells connected to one another in series, each of the secondary cells includes a one-side electrode and an other-side electrode;
a first condenser and a second condenser, each of which has a one-side plate and an other-side plate, each of the one-side plates is connected to the one-side electrode of each of the plurality of secondary cells;
a first switch selectively connecting the other-side electrode of each of the secondary cells to the other-side plate each of the first condenser and the second condenser;
a first switch control unit controlling the first switch to connect the other-side electrode of each of the secondary cells to the other-side plate of the first condenser when the plurality of secondary cells is in a first state, and then connect the other-side electrode of each of the secondary cells to the other-side plate of the second condenser when the plurality of secondary cells is in a second state;
a differential amplifier circuit outputting a differential voltage of voltages of the other-side plates of the first condenser and the second condenser; and
a cell state detecting unit detecting a state of each of the secondary cells based on the differential voltage.

US Pat. No. 10,249,913

BATTERY PACK COOLING SYSTEM

Nissan Motor Co., Ltd., ...

1. A battery pack cooling system comprising:a battery pack case;
a plurality of cells defining cell modules disposed in an internal space of the battery pack case so as to form a cooling passage, the cooling passage configured to cool the cell modules by cooling air flowing in the cooling passage;
a first temperature sensor that is a first minimum temperature sensor disposed in an upstream position of a first cell module of the cell modules, which becomes a lowest temperature position in the first cell module;
a second temperature sensor that is a first maximum temperature sensor disposed in a downstream position of the first cell module, which becomes a highest temperature position in the first cell module;
a third temperature sensor disposed in a second cell module of the cell modules, the third temperature sensor configured to measure either a highest temperature or a lowest temperature in the second cell module,
the cooling passage including a cooling air inlet passage, a cooling air exhaust passage, and a plurality of cooling branch passages disposed to connect the cooling air inlet passage and the cooling air exhaust passage in parallel, the cell modules being disposed respectively in the plurality of cooling branch passages; and
a controller configured to perform a calculation based on temperature information from the first second and third temperature sensors, the controller comprising a diagnostic unit configured to carry out rationality diagnosis of the first and second temperature sensors using, if the third temperature sensor is configured to measure the lowest temperature in the second cell module, a difference between temperature change gradients from the first and third temperature sensors in which a lowest temperature in the first cell module and the lowest temperature in the second cell module can be compared, or, if the third temperature sensor is configured to measure the highest temperature in the second cell module, a difference between temperature change gradients from the second and third temperature sensors in which a highest temperature in the first cell module and the highest temperature in the second cell module can be compared.

US Pat. No. 10,249,912

ELECTRICAL CONTROL SYSTEM

LG Chem, Ltd., Seoul (KR...

1. An electrical control system, comprising:a primary microcontroller receiving a first message with a voltage value from a slave IC via a communication IC, the voltage value being indicative of a voltage level of a battery cell;
the primary microcontroller sending a second message with a maximum desired voltage threshold value to the slave IC via the communication IC, the maximum desired voltage threshold value being less than the voltage value;
the slave IC sending a third message with an overvoltage flag to the primary microcontroller via the communication IC, the overvoltage flag indicating an overvoltage condition has been detected in the battery cell;
the communication IC setting a fault line to a first logic level indicating that the overvoltage condition has been detected in response to the overvoltage flag;
the secondary microcontroller sending a fourth message to the primary microcontroller via a communication bus indicating that the overvoltage condition has been detected in response to the fault line having the first logic level; and
the primary microcontroller determining that both the fourth message was received and the fault line has the first logic level to confirm that the communication bus is functioning as desired and that the secondary microcontroller is functioning as desired.

US Pat. No. 10,249,911

SOLID-STATE LITHIUM BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A solid-state lithium battery comprising:a cathode active material layer containing a cathode active material;
an anode active material layer containing an anode active material; and
a solid electrolyte layer formed between the cathode active material layer and the anode active material layer,
wherein the cathode active material is an oxide active material,
at least one of the cathode active material layer and the solid electrolyte layer contains a sulfide solid electrolyte material, the sulfide solid electrolyte material comprising a Li element, a P element, a S element, and an I element, and
the cathode active material layer contains a phosphate ester represented by general formula (1) or general formula (2):
where, in general formula (1), R1 to R3 are each independently a group containing at least a carbon element, and at least one of R1 to R3 has a C6H5 group, a C6F5 group, a C6H4 (CH3) group, or a CF3 group at an end edge, and, in general formula (2), R4 to R8 are each independently a group containing at least a carbon element, and at least one of R4 to R7 has a C6H5 group, a C6F5 group, a C6H4 (CH3) group, or a CF3 group at an end edge.

US Pat. No. 10,249,910

RECHARGEABLE LITHIUM-ION CELL

BOARD OF TRUSTEES OF MICH...

1. A rechargeable lithium-ion cell having a cell capacity and comprising:A. a positive electrode having a recharged potential;
B. a negative electrode;
C. a charge-carrying electrolyte comprising a charge-carrying medium and a lithium salt; and
D. a redox shuttle having the following structure:

wherein X is a covalent bond, a sulfur atom (S), or N—R6, and wherein each of R1, R2, R3, R4, R6, R7, R8, R9 and R10 is independently an alkyl group, a haloalkyl group, a perhaloalkyl group, an acyl group, an acyloxy group, an acetyl group, a haloacetyl group, an alkaryl group, an alkoxy group, an acetamido group, an amido group, an aryl group, an aralkyl group, an alkyl carboxyl group, an aryl carboxyl group, an alkylsulfonyl group, a benzoyl group, a carbamoyl group, a carboxy group, a cyano group, a formyl group, a halo group, a haloacetamido group, a haloacyl group, a haloalkylsulfonyl group, a haloaryl group, a methylsulfonyloxyl group, a nitro group, an oxo group, an alkyl ether group, a trialkylammoniumalkyl group, a phosphate group, a phosphonate group, or an alkyl phosphonate group, and wherein one of R3 and R4 is optionally a hydrogen atom; and
wherein R5 is an alkyl group having 1-12 carbon atoms, an alkylether group having 1-12 carbon atoms, or a trialkylammoniumalkyl group having 1-12 carbon atoms.

US Pat. No. 10,249,909

NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME

SANYO Electric Co., Ltd.,...

1. A nonaqueous electrolyte secondary battery comprising an electrode assembly and a battery case accommodating the electrode assembly, the electrode assembly including a positive electrode plate having a positive electrode active material layer disposed on a positive electrode current collector and a negative electrode plate having a negative electrode active material layer disposed on a negative electrode current collector, the positive electrode plate and the negative electrode plate being wound together into a coil through a separator, the electrode assembly being fastened with a rectangular or square fixing tape applied to cover the end of the coil,wherein the fixing tape includes a substrate, and a pressure-sensitive adhesive disposed on the substrate,
the side of the fixing tape in contact with the electrode assembly including self-adhesive portions having the pressure-sensitive adhesive and a non-adhesive portion not having the pressure-sensitive adhesive,
the self-adhesive portions being disposed at both ends of the non-adhesive portion in the direction of the width of the fixing tape wherein the direction of the width of the fixing tape is the direction of the height of the electrode assembly,
the battery satisfying 0.9?Wb/Wa?1.05 and 0.35?Wc/Wa?0.85 wherein Wa is the height of the electrode assembly, Wb is the width of the fixing tape and Wc is the width of the non-adhesive portion.

US Pat. No. 10,249,908

SYSTEMS, METHODS AND DEVICES FOR CREATING A LI-METAL EDGE-WISE CELL

INTEL CORPORATION, Santa...

1. A battery using reduced stack force, comprising:a battery body having a length, a width and a depth, wherein:
an edge of the battery is defined by the length and the width of one or more sets of layers within the battery; and
a side of the battery is defined by the length and depth of the one or more sets of layers within the battery,
wherein an edge area of the battery body is larger than a side area of the battery body; and
a plurality of layers having substantially the length and substantially the width, a set of layers from the plurality of layers comprising:
a cathode current collector layer;
a cathode material layer coupled to the cathode current collector layer;
an anode current collector layer, the anode current collector layer comprising a neck formation forming a fuse, wherein the neck formation is thinner than a thickness of the anode current collector layer;
a Lithium-metal layer coupled to the anode current collector layer and comprising Lithium metal; and
a separator layer disposed between the Lithium-metal layer and the cathode material layer and configured to insulate the cathode material layer from the Lithium-metal layer.

US Pat. No. 10,249,907

NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, METHOD FOR PRODUCING SAME AND NONAQUEOUS ELECTROLYTE

TOYOTA JIDOSHA KABUSHIKI ...

1. A nonaqueous electrolyte secondary battery comprising:an electrode assembly including a positive electrode, a separator and a negative electrode, the negative electrode including a negative current collector, a negative active material layer, containing a negative active material, formed on the surface of the current collector, and a coat, derived from an oxalato complex component, being provided on at least part of the surface of the negative active material layer;
a nonaqueous electrolyte containing a crown ether for forming a complex with a sodium ion; and
a battery case housing the electrode assembly and the nonaqueous electrolyte, wherein
a formula 0.5?A/X?1.2 is satisfied, when a number of moles of sodium ions that leach into the nonaqueous electrolyte from the electrode assembly is assigned a value of X moles, and a number of moles of crown ether contained in the nonaqueous electrolyte is assigned a value of A moles, wherein
a difference (?R) between a reaction resistance at edges and a reaction resistance in a center of a widthwise direction orthogonal to the lengthwise direction of the negative electrode is 0.5? or less.

US Pat. No. 10,249,906

USE OF FLUOROISOPROPYL DERIVATIVES AS ADDITIVES IN ELECTROLYTES

BASF SE, Ludwigshafen (D...

1. An electrolyte composition (A) comprising:(i) from 39.9 to 99.9 wt.-% of at least one aprotic organic solvent based on the total weight of the electrolyte composition;
(ii) from 0.1 to 25 wt.-% of at least one conducting salt based on the total weight of the electrolyte composition, the at least one conducting salt selected from the group consisting of:
Li[F6?xP(CyF2y+1)x], wherein x is an integer in the range from 0 to 6 and y is an integer ranging from 1 to 20,
Li[B(R2)4], Li[B(R2)2(OR3O)] and Li[B(OR3O)2], wherein each R2 is independently from each other selected from F, Cl, Br, I, C1-C4 alkyl, C2-C4 alkenyl, and C2-C4 alkinyl, wherein alkyl, alkenyl, and alkinyl may be substituted by one or more OR4, wherein R4 is selected from C1-C6 alkyl, C2-C6 alkenyl, and C2-C6 alkinyl, and
(OR3O) is a bivalent group derived from a 1,2- or 1,3-diol, a 1,2- or 1,3-dicarboxlic acid or a 1,2- or 1,3-hydroxycarboxylic acid, wherein the bivalent group forms a 5- or 6-membered cycle via the both oxygen atoms with the central B-atom,
salts of the general formula Li[X(CnF2n+1SO2)m], where m and n are defined as follows:
m=1, when X is selected from oxygen and sulfur,
m=2, when X is selected from nitrogen and phosphorus,
m=3, when X is selected from carbon and silicon, and
n is an integer ranging from 1 to 20,
LiClO4, LiAsF6, LiCF3SO3, Li2SiF6, LiSbF6, LiAlCl4, lithium tetrafluoro (oxalato) phosphate, and lithium oxa late;
(iii) from 0.001 to 60 wt.-% of at least one compound of formula (I) based on the total weight of the electrolyte composition:

wherein
A1, A2, A3, A4, A5, and A6 are F;
R is selected from R1, OR1, and C(O)OR1, and
R1 is selected from C1-C6 alkyl, C3-C6 cycloalkyl, C2-C6 alkenyl, C3-C6 cycloalkenyl, C5-C7 (hetero)aryl, and C2-C6 alkinyl, wherein alkyl, cycloalkyl, alkenyl, cycloalkenyl, (hetero)aryl, and alkinyl may be substituted by one or more F
(iv) from 0 to 10 wt.-% of the at least one further additive, based on the total weight of the electrolyte composition.

US Pat. No. 10,249,905

ALL-SOLID-STATE SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME

TAIYO YUDEN CO., LTD., T...

1. A method for manufacturing an all-solid-state secondary battery, comprising:sintering, at the same time together, a solid electrolyte layer containing a phosphate having a NASICON-type structure and a positive electrode active material layer formed of an olivine-type active material LiMPO4 to form a sintered compact, where M is a transition metal; and
adding, to a material for forming the solid electrolyte layer before the sintering, 0.05 moles to 0.3 moles of a transition metal element that is the same as the transition metal M used in the positive electrode active material layer for every 1 mole of the phosphate in the material for forming the solid electrolyte layer,
wherein the phosphate in the solid electrolyte layer is expressed as:
Li1+x+zDx(EyTi1?y)2?x(SiO4)z(PO4)3?z,
where 0?x?0.8, 0?y<1, 0?z?0.5, D is at least one element of trivalent aluminum (Al) and gallium (Ga), and E is at least one element of quadrivalent germanium (Ge) and zirconium (Zr).

US Pat. No. 10,249,904

ELECTROCHEMICAL CELL

SEIKO INSTRUMENTS INC., ...

1. An electrochemical cell comprising:an electrode body in which a first electrode layer and a second electrode layer are alternately stacked in a first direction via a solid electrolyte;
an exterior packaging body in which a plurality of substrates including a first substrate of a ceramic material are stacked in the first direction, and defining a cavity that accommodates the electrode body;
a first electrode connection wiring in the exterior packaging body and connecting the first electrode layer and an external substrate to each other, the external substrate coextensive with the first substrate; and
a second electrode connection wiring in the exterior packaging body and connecting the second electrode layer and the external substrate to each other,
wherein at least the first electrode connection wiring is in the first substrate, and
an attachment portion configured to attach a first fastening member is at the first substrate,
at least the first electrode connection wiring and the first substrate are mounted to the external substrate by attaching the first fastening member to the attachment portion, and
the attachment portion protrudes so as to be separated from the electrode body in an in-plane direction of the first substrate, in a plan view seen from the first direction.

US Pat. No. 10,249,902

SECONDARY BATTERY TRANSFER DEVICE AND METHOD FOR DETECTING RECEIPT FAILURE OF SECONDARY BATTERY

LG Chem, Ltd., Seoul (KR...

5. A secondary battery transfer apparatus comprising:a carrier including a box-shaped supporter and plate-shaped diaphragms formed on the supporter and separated from each other, and having a receipt space formed between the upper surface of the supporter and the diaphragms to receive a secondary battery;
a transfer unit transferring the carrier;
light emitting units emitting light upward via a gap between the diaphragms from the upper surface of the supporter; and
a light receiving unit located above the carrier, receiving the light emitted from the light emitting units, and outputting the quantity of the received light.

US Pat. No. 10,249,901

ORGANIC-INORGANIC COMPOSITE ANION EXCHANGE MEMBRANE CONTAINING POLYVINYLIDENE FLUORIDE POLYMER FOR NON-AQUEOUS REDOX FLOW BATTERY AND METHOD FOR PREPARING THE SAME

GWANGJU INSTITUTE OF SCIE...

1. An anion exchange membrane for non-aqueous redox flow batteries, comprising:(A) silica particles;
(B) a polyvinylidene fluoride polymer represented by Formula 1:

(where l is an integer ranging from 5,000 to 500,000); and
(C) a divinylbenzene polymer,
wherein
the silica particles are present in an amount ranging from 5 wt % to 10 wt % based on the amount of polyvinylidene fluoride polymer,
the silica particles have a particle size ranging from 5 nm to 20 nm, and
the divinylbenzene polymer is a polymer having a structure selected from structures represented by Formulae 3, 3a, 3b, or a mixture thereof:

where m is an integer ranging from 1 to 500,000, and 1?x+y?500,000, and x and y are integers;

where two x's are identical or different from each other, four y's are identical or different from one another, m is an integer ranging from 1 to 500,000, and 1?x+y?500,000, and x and y are integers; and

where four x's are identical or different from each other, four y's are identical or different from one another, m is an integer ranging from 1 to 500,000, and 1?x+y?500,000, and x and y are integers,
wherein in Formulae 3, 3a, and 3b:
R1 is at least one selected from the group consisting of a pyridine cation substituted with a linear or branched C1 to C6 alkyl group, a pyrrole cation substituted with a linear or branched C1 to C6 alkyl group, an indole cation substituted with a linear or branched C1 to C6 alkyl group, a carbazole cation substituted with a linear or branched C1 to C6 alkyl group, a pyrimidine cation substituted with a linear or branched C1 to C6 alkyl group, an imidazole pyridinyl cation substituted with a linear or branched C1 to C6 alkyl group, and a pyrazolyl cation substituted with a linear or branched C1 to C6 alkyl group,
R2 is H or CH3.

US Pat. No. 10,249,900

METHOD FOR PREPARING A COMPOSITE MEMBRANE

AGFA-GEVAERT, Mortsel (B...

1. A method for making a composite membrane comprising the steps of:coating a first layer of an ionomer on an intermediate support;
laminating a porous support into the first layer of the ionomer while the first layer of the ionomer is still wet from the step of coating;
impregnating the porous support with the ionomer from the first layer of the ionomer;
coating a second layer of the ionomer on the impregnated porous support;
drying the impregnated porous support, the first layer of the ionomer, and the second layer of the ionomer to obtain the composite membrane on the intermediate support; and
delaminating the composite membrane from the intermediate support.

US Pat. No. 10,249,899

METHOD FOR MAKING FUEL CELL MODULE HAVING CURVED MEMBRANE ELECTRODE ASSEMBLY

Tsinghua University, Bei...

1. A method for making fuel cell module, the method comprising:providing a container, wherein the container comprises a housing and a nozzle, and the housing defines a plurality of through holes, wherein the housing defines a chamber and an opening, wherein the nozzle has a first end connected to the opening and a second end opposite to the first end; and
applying a membrane electrode assembly, which is flexible, on the container to form a curved membrane electrode assembly surrounding the chamber and covering the plurality of through holes, wherein the membrane electrode assembly comprises a proton exchange membrane having a first surface and a second surface opposite to the first surface, a cathode electrode located on the first surface and an anode electrode located on the second surface.

US Pat. No. 10,249,898

MEMBRANE ELECTRODE ASSEMBLY AND ELECTROCHEMICAL CELL

Kabushiki Kaisha Toshiba,...

1. A membrane electrode assembly comprising:a catalyst layer being porous and containing a catalyst material;
the catalyst layer comprising a plurality of catalyst units each having a porous body structure or a laminated structure containing a void layer; and
an electrolyte membrane adjacent to the porous catalyst layer;
wherein the plurality of catalyst units bite into the electrolyte membrane, and an average biting ratio is not less than 10%, and not more than 80% of a thickness of the catalyst layer, and
wherein an interface between the catalyst layer and the electrolyte membrane is in a concave convex structure.

US Pat. No. 10,249,897

ELECTROLYTE BALANCING STRATEGIES FOR FLOW BATTERIES

Lockheed Martin Energy, L...

1. A redox flow battery comprising at least one electrochemical cell in fluid communication with a balancing cell, said balancing cell comprising:first and second half-cell chambers separated by a membrane,
wherein the first half-cell chamber comprises a first electrode in contact with a first aqueous electrolyte of the redox flow battery; and
wherein the second half-cell chamber comprises a second electrode in contact with a second aqueous electrolyte, said second electrode comprising a catalyst for the generation of O2; and wherein the second aqueous electrolyte has a pH from 2 to 7.

US Pat. No. 10,249,896

SYSTEM AND METHOD FOR CONTROLLING FUEL CELL VEHICLE

Hyundai Motor Company, S...

1. A method for controlling a fuel cell vehicle, the method comprising:acquiring state data that includes information related to a water content of a membrane electrode assembly, a cathode pressure, an anode pressure, a cooling water temperature, and a stack current;
deriving a mathematical voltage model by substituting the acquired state data into a voltage calculation formula;
measuring a voltage of a fuel cell;
approximating the mathematical voltage model to a measurement voltage by changing a reaction area data and deriving the reaction area data when the mathematical voltage model approximates the measurement voltage; and
controlling a system of the fuel cell vehicle based on the derived reaction area data to affect an over-humidification situation of the fuel cell.

US Pat. No. 10,249,895

APPARATUS AND METHOD FOR DIAGNOSING STATE OF FUEL CELL STACK

HYUNDAI MOTOR COMPANY, S...

1. An apparatus comprising:a stack voltage monitor (SVM) configured to
measure a voltage of each channel of a plurality of channels of a fuel cell stack, each channel of the plurality of channels including a predetermined number of unit cells, and
calculate impedances of a subset of the plurality of channels having voltages affecting diagnosis of the fuel cell stack; and
a controller configured to diagnose a state of the fuel cell stack based on the calculated impedances, wherein the SVM is configured to estimate a distribution of impedances of all the channels of the fuel cell stack based on a distribution of the calculated impedances of the subset of the plurality of channels.

US Pat. No. 10,249,894

FUEL CELL SYSTEM

NISSAN MOTOR CO., LTD., ...

1. A fuel cell system comprising:a first fuel cell stack;
a second fuel cell stack with lower output voltage than the first fuel cell stack, a pre-switching stack configured by the first fuel cell stack or the second fuel cell stack, a step-up stack configured by the first fuel cell stack or the second fuel cell stack, a post-switching stack configured by at least the first fuel cell stack; and
an electricity control device configured to step up voltage of the step-up stack with the pre-switching stack connected to a load and then switch to a connection state where the post-switching stack is connected to the load.

US Pat. No. 10,249,893

FUEL CELL ARCHITECTURES, MONITORING SYSTEMS, AND CONTROL LOGIC FOR CHARACTERIZING FLUID FLOW IN FUEL CELL STACKS

GM Global Technology Oper...

1. A method for operating a fuel cell system of a motor vehicle, the motor vehicle including a vehicle controller, a plurality of road wheels, and a traction motor operable to drive at least one of the road wheels, the method comprising:transmitting, via the vehicle controller, a command signal to the fuel cell system to generate electricity to power the traction motor and thereby drive at least one of the road wheels;
determining, via the vehicle controller, a voltage-property correlation between voltage change of the fuel cell system and flow property change of a fluid in the fuel cell system;
determining, from the voltage-property correlation, a calibrated voltage drop corresponding to the flow property change of the fluid;
monitoring a system voltage of the fuel cell system;
detecting a voltage magnitude change in the system voltage; and
responsive to a determination that the voltage magnitude change is greater than the calibrated voltage drop, outputting a signal indicating detection of the flow property change, a signal to the fuel cell system to discontinue generating electricity, and/or a signal to close an anode valve operable to regulate transmission of anode exhaust gas from of the fuel cell system.

US Pat. No. 10,249,892

POWER DISTRIBUTION METHOD AND SYSTEM FOR FUEL CELL VEHICLE

Hyundai Motor Company, S...

1. A power distribution method for a fuel cell vehicle, comprising:deducing, by a controller, an amount of moisture in a stack of a fuel cell, when a supply amount of air of the stack of the fuel cell is decreased;
determining, by the controller, a state of the fuel cell based on the amount of moisture;
deducing, by the controller, allowance power of a regenerative braking of a driving motor, wherein power of a regenerative braking of an air compressor and chargeable power of a high voltage battery based on the determined state are used for deducing the allowance power and the regenerative braking of the air compressor is performed by controlling rotation speed of a motor of the air compressor; and
adjusting, by the controller, the regenerative braking of the driving motor to prevent actual power of the regenerative braking of the driving motor from exceeding the allowance power of the regenerative braking of the driving motor.

US Pat. No. 10,249,891

ELECTROLYTE-CIRCULATING BATTERY

Sumitomo Electric Industr...

1. An electrolyte-circulating battery comprising:a battery cell; and
a circulation passage joined to the battery cell and configured to circulate an electrolyte into the battery cell;
wherein the circulation passage includes a complex duct, and
the complex duct includes a tubular main body composed of a polyethylene resin, an oxygen block layer disposed on a periphery of the main body and composed of an ethylene-vinyl alcohol copolymer that has a lower oxygen transmission rate than the main body, and a protective layer disposed on the periphery of the oxygen block layer and mechanically protecting the oxygen block layer, and the thickness of the entire complex duct is 1 mm or less.

US Pat. No. 10,249,890

METHOD FOR COLD-START OF FUEL CELL STACK

Daimler AG, Stuttgart (D...

1. A method for starting up a fuel cell stack (FCS) from a starting temperature below freezing in a vehicle having a vehicle controller programmed to store (a) the amount of residual water left in the fuel cell stack at FCS shutdown, (b) an ice tolerance curve representing the maximum amount of ice which may be present in a FCS during startup at any temperature up to 0° C., and (c) the amount of water generated as a by-product of the electrochemical reaction in the FCS when generating current, the method comprising:retrieving the amount of residual water remaining in the FCS from the previous shut-down;
determining ambient temperature;
inferring FCS temperature based on ambient temperature; and
(a) in the event that inferred FCS temperature is below 0° C., operating the FCS under the control of the vehicle controller with limiting the amount of current used until the temperature in the FCS reaches 0° C. such that ice produced during current generation will not exceed the ice tolerance curve; or
(b) in the event that the inferred cell stack temperature is above 0° C., starting up the fuel cell stack without limiting the current drawn from the fuel cell stack.

US Pat. No. 10,249,889

FUEL CELL SYSTEM

HONDA MOTOR CO., LTD., T...

1. A fuel cell system comprising:a fuel cell to which fuel gas and oxidant gas are fed and which generates electric power;
an oxidant feed path to the fuel cell;
an oxidant pump of a turbo type in which a shaft is supported by an air bearing, and which takes in and sends out the oxidant gas by rotary motion;
a flow-rate sensor detecting an actual-flow-rate of the oxidant gas;
a pressure sensor sensing a pressure of the oxidant gas;
a control device including a processor and a memory storing software instructions, and receives a target current value of the fuel cell from an external device;
a humidifier arranged between the oxidant pump and the fuel cell;
a humidifier bypass which bypasses the humidifier; and
a humidifier bypass valve which controls proportions of the oxidant gas between the humidifier and the humidifier bypass by an opening degree of the humidifier bypass valve; and
a back pressure valve, an aperture of which is adjusted to adjust the pressure of the oxidant gas,
wherein when the software instructions stored in the memory is executed by the processor of the control device, the control device is programmed to:
set a target flow rate of the oxidant gas and a target pressure of the oxidant gas in accordance with the target current value of the fuel cell;
calculate opening degree of the humidifier bypass valve in accordance with the target current value of the fuel cell;
calculate a value of pressure loss of the oxidant gas at the calculated opening degree of the humidifier bypass valve and the target flow rate on the basis of a relationship among the opening degree of the humidifier bypass valve, the target flow rate, and the pressure loss of the oxidant flow;
determine whether a sum of the target pressure and the value of the pressure loss of the oxidant gas is smaller than a first predetermined value; and
add a second predetermined value to the target pressure to set a new target pressure of the oxidant gas if the sum of the target pressure and the value of the pressure loss of the oxidant gas is smaller than the first predetermined value,
adjust the opening degree of the humidifier bypass valve in accordance with a calculated opening degree of the humidifier bypass valve, and
adjust the opening degree of the aperture of the back pressure valve so that the pressure of the oxidant gas becomes equal to the calculated new target pressure of the oxidant gas.

US Pat. No. 10,249,888

PASSIVE RECIRCULATION DEVICE

Nuvera Fuel Cells, LLC, ...

1. A recirculation device, comprising:a body defining an internal cavity, the body comprising a first passage configured to receive an exhaust into the body, a second passage configured to receive a fuel into the body, a third passage configured to discharge a mixture of the exhaust and the fuel from the body, and a longitudinal axis extending from the second passage to the third passage;
a piston slideably located within the body having a diaphragm seal fixed to an outer wall of the piston and an inner wall of the internal cavity, where the outer wall and diaphragm seal separate the internal cavity into a first cavity section that is exposed to the exhaust and a second cavity section separated from the exhaust, the piston comprises a piston cavity configured to receive a needle through the piston cavity, the piston cavity is configured to direct the fuel towards an orifice, the orifice is located at the smallest cross-sectional area of the piston cavity, whereby the piston is actuated along the longitudinal axis of the body toward the second passage by an exhaust force applied to the piston by the exhaust within the first cavity section of the body;
a mixing chamber located within the body configured to receive the exhaust and configured to receive the fuel from the orifice; and
the needle fixedly coupled to the body comprising:
a first end that receives the fuel from the second passage and feeds the fuel into a central cavity that extends towards a second end; and
in the general region of the second end an outlet passage discharges the fuel from the central cavity into the piston cavity;
a spring positioned within the second cavity section of the body that contacts the piston and applies a spring force on the piston, wherein the spring force opposes the exhaust force;
wherein the position of the piston is passively controlled by the exhaust force produced by a pressure of the exhaust within the body such that the sum of the exhaust force, the spring force, and a hydraulic force due to a pressure in the second cavity section determines the position of the piston and the flow rate of the fuel through the orifice into the mixing chamber.

US Pat. No. 10,249,887

FUEL CELL

Sumitomo Precision Produc...

1. A fuel cell configured by stacking a plurality of power generation units, whereinthe power generation units each comprise:
a cell formed with a cathode on at least one surface;
a frame-shaped cell holder provided to surround an outside of the cell;
an insulating portion provided on a surface of the cell holder; and
a first seal member provided to lie across the cell and the insulating portion not to contact the cathode of the cell,
the cell holder is provided with an inflow passage for allowing fuel gas to flow into a frame of the cell holder from a fuel gas manifold provided on an outer peripheral side, and
a convex support for supporting the insulating portion and the first seal member is provided in the inflow passage.

US Pat. No. 10,249,886

FUEL-CELL GAS DIFFUSION LAYER, AND METHOD OF PRODUCING SAME

Toray Industries, Inc., ...

1. A fuel cell gas diffusion layer comprising:a porous carbon fiber base substrate
1) consisting of discontinuous carbon fibers bonded to each other with carbonized material,
2) being impregnated with porous material (J) at least part of which is exposed at one surface B thereof,
3) having internal pores with a cross-sectional area accounting for 5% to 40% of the total cross section in a through-plane direction with carbonaceous particles in the porous carbon fiber base substrate, and
4) having a thickness of 60 to 300 ?m and a density of 0.20 to 0.45 g/cm3, and
a layer (A) containing voids, the layer (A) having a mean thickness t1 of 10 to 55 ?m and consisting of 1) carbonaceous particles, and 2) a hydrophobic polymer deposited on an opposite surface A of the porous carbon fiber base substrate,
at least layer (A) and porous material (J) both having a void percentage of 50% to 85%.

US Pat. No. 10,249,885

CATHODE CURRENT COLLECTOR FOR SOLID OXIDE FUEL CELL, AND SOLID OXIDE FUEL CELL COMPRISING SAME

ALANTUM CORPORATION, Gye...

1. A cathode current collector for a solid oxide fuel cell,wherein the cathode current collector is a porous metal foam having pores,
wherein the metal foam is formed of one or more types of alloys consisting of CoMn, CuMn, CoNiMn and CoCuMn, and
wherein the metal foam has a density of 200 g/m2 to 1000 g/m2.

US Pat. No. 10,249,884

THERMO-ELECTRO-CHEMICAL CONVERTERS AND METHODS OF USE THEREOF

Georgia Tech Research Cor...

1. A thermo-electro-chemical converter, comprising:an evaporator chamber, wherein a first heat source is in thermal communication with the evaporator chamber, wherein the evaporator chamber is configured to evaporate a first condensed fluid to form a first neutral gas;
a first plenum;
a first ionically conductive membrane positioned between the evaporator chamber and the first plenum, wherein a first anode is in contact with the first ionically conductive membrane and exposed to the evaporator chamber, wherein a first cathode is in contact with the first ionically conductive membrane on a side opposite the evaporator chamber, wherein the first ionically conductive membrane is conductive to only first cations of the first neutral gas, wherein the first ionically conductive membrane and the first anode are configured to interact with the first neutral gas to form one of the first cations and a first electron, wherein the first ionically conductive membrane is configured to produce a second neutral gas in the first plenum by interaction of the first cathode with the first cation and the first election;
a second plenum, wherein a connecting channel connects the first plenum with the second plenum and is configured to receive the second neutral gas from the first plenum through the connecting channel;
a second ionically conductive membrane positioned between the second plenum and a condensation chamber, wherein a second anode is positioned on the second ionically conductive membrane and exposed to the second plenum, wherein a second cathode is in contact with the second ionically conductive membrane and exposed to the condensation chamber, wherein the second ionically conductive membrane is conductive to only second cations of the second neutral gas, wherein the second ionically conductive membrane and the second anode are configured to form the second cation from the interaction of the second neutral gas, wherein the second cathode is configured to interact with the second cation and a second electron to produce a third neutral gas, wherein the condensation chamber is configured to receive the third neutral gas, wherein the condensation chamber is in thermal communication with a cooling element, wherein the condensation chamber is configured to condense the third neutral gas into a second condensed fluid; and
a pumping device connecting the condensation chamber and the evaporator chamber, wherein the condensation chamber and the evaporator chamber are configured so that the second condensed fluid flows from the condensation chamber to the evaporator chamber,
wherein an electrical circuit is formed as a result of the first cathode and the second anode being in electrical communication and the first anode and the second cathode being in electrical communication, wherein the electrical circuit is configured to generate an electrical current.

US Pat. No. 10,249,883

SOFC CATHODE COMPOSITIONS WITH IMPROVED RESISTANCE TO SOFC DEGRADATION

BLOOM ENERGY CORPORATION,...

1. A solid oxide fuel cell (SOFC), comprising:a solid oxide electrolyte comprising a zirconia-based ceramic;
an anode electrode; and
a cathode electrode comprising an electrically conductive component and an ionically conductive component, wherein the ionically conductive component comprises a zirconia-based ceramic containing scandia, 0.25-1.25 mol % ceria, and 0.25-1.25 mol % ytterbia, yttria, or a combination of ytterbia and yttria.

US Pat. No. 10,249,882

POSITIVE ELECTRODE FOR LITHIUM AIR BATTERY, METHOD OF PREPARING SAME AND LITHIUM AIR BATTERY INCLUDING SAME

Samsung SDI Co., Ltd., Y...

1. A positive electrode for a lithium air battery, the positive electrode comprising:a current collector and a catalyst layer on the current collector,
wherein the catalyst layer comprises:
a binder,
conductive particles surrounding the binder, and
catalyst particles spaced apart from the binder, the catalyst particles being on surfaces of the conductive particles such that none of the catalyst particles on the surfaces of the conductive particles contact the binder.

US Pat. No. 10,249,881

ELECTRODE MATERIAL FOR METAL-AIR BATTERY

Toray Industries, Inc., ...

1. An electrode material for metal-air batteries comprising a porous carbon material having a co-continuous structure portion in which a skeleton constituted of carbon and voids form a co-continuous structure and which has a structural period, as calculated by X-ray scattering method or X-ray CT method, of 0.002 ?m to 10 ?m.

US Pat. No. 10,249,880

METHOD FOR MANUFACTURING CURRENT COLLECTOR AND METHOD FOR MANUFACTURING SOLID BATTERY

TOYOTA JIDOSHA KABUSHIKIA...

1. A method for manufacturing a current collector having a conductive layer, the method comprising:dispersing a carbon material in a first organic solvent to prepare a carbon material dispersion solution;
dispersing polyvinylidene fluoride in a second organic solvent to prepare a resin dispersion solution;
mixing the carbon material dispersion solution, the resin dispersion solution, and water to precipitate the polyvinylidene fluoride in the resin dispersion solution with water, such that a composition for forming the conductive layer is prepared; and
applying the composition for forming the conductive layer on the current collector, and thereafter drying the composition to form the conductive layer on the surface of the current collector.

US Pat. No. 10,249,878

NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A non-aqueous electrolyte secondary battery comprising:a case;
a non-aqueous electrolyte solution; and
an electrode group,
the non-aqueous electrolyte solution and the electrode group being housed in the case,
the non-aqueous electrolyte solution including an aprotic solvent and a supporting electrolyte salt,
the electrode group including a positive electrode, a negative electrode, a separator and a low spring constant film,
each of the positive electrode, the negative electrode, the separator and the low spring constant film at least partially including a porous structure,
the positive electrode, the negative electrode, the separator and the low spring constant film being impregnated with the non-aqueous electrolyte solution,
in the electrode group, the positive electrode and the negative electrode being stacked so as to face each other with the separator and the low spring constant film interposed therebetween,
the positive electrode or the negative electrode having a first spring constant that is the lowest spring constant of the positive electrode, the negative electrode and the separator,
the low spring constant film having a second spring constant, and
the second spring constant being lower than the first spring constant.

US Pat. No. 10,249,877

LITHIUM IRON PHOSPHATE HAVING OLIVINE STRUCTURE AND METHOD FOR ANALYZING THE SAME

LG Chem, Ltd., (KR)

1. An olivine-type lithium iron phosphate having a composition of Formula I below, said olivine-type lithium iron phosphate having impurities consisting of Li3PO4 and optionally Li2CO3, wherein an amount of the Li2CO3 is from 0% to less than 0.25% by weight and an amount of Li3PO4 is from 0.1% to 0.31%:Li1+aFe1?xMx(PO4?b)Xb  (I)
wherein
M is selected from Al, Mg, Ti and combinations thereof,
X is selected from F, S, N and combinations thereof;
?0.5?a?+0.5;
0?x?0.5; and
0?b?0.1,
wherein the amount of Li2CO3 and Li3PO4 present in the olivine-type lithium iron phosphate is determined by a pH titration method by mixing 10 g of a sample of the olivine-type lithium iron phosphate with 100 ml of distilled water to form the mixture; stirring the mixture for 5 to 10 minutes to form a reaction mixture; filtering the reaction mixture to form a filtrate; titrating the filtrate with HCl and measuring pH of the resulting solution to characterize the amount of the impurities,
wherein the olivine-type lithium iron phosphate is prepared by a supercritical hydrothermal method at a temperature of 200 to 700° C. under a pressure of 180 to 550 bar, wherein an amount of ammonia added is controlled such that an initial pH of an aqueous solution containing raw materials with an alkaline agent is from 10.31 to 11.30, and
wherein the Li3PO4 is present on the surface of lithium iron phosphate particles and the Li2CO3, if present, is present on the surface of lithium iron phosphate particles, and the olivine-type lithium iron phosphate has a pH of 10.0 to 11.5.

US Pat. No. 10,249,876

LITHIUM-ION SECONDARY BATTERY AND ELECTRONIC DEVICE

Semiconductor Energy Labo...

1. A method for forming an active material, comprising the steps of:forming a mixture of a lithium compound, a manganese compound, and a nickel compound;
heating the mixture and obtaining a secondary particle composed of sintered primary particles;
crushing the secondary particle into a plurality of particles; and
coating the plurality of particles with a layer comprising graphene,
wherein a first cleavage plane of a first particle in the plurality of particles is covered with the layer comprising graphene,
wherein the first cleavage plane is formed by the crushing step,
wherein a second cleavage plane of a second particle in the plurality of particles is covered with the layer comprising graphene, and
wherein the first particle and the second particle are bound with graphene.

US Pat. No. 10,249,875

METHOD OF FABRICATING ANODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, ANODE ACTIVE MATERIAL FABRICATED THEREBY, AND SLURRY FOR ANODE

LG Chem, Ltd., (KR)

1. A method of preparing a negative electrode active material, the method comprising:mixing a lithium precursor and a titanium precursor; and
sintering the precursor mixture to prepare a lithium titanium-based active material including a lithium titanium oxide,
wherein the sintering is performed in a temperature range of 775° C. to 800° C.; a molar ratio of lithium to titanium in the lithium titanium oxide is in a range of 0.80 to 0.85; and a residual amount of lithium in the lithium titanium-based active material is 2,000 ppm or less based on a total amount of the lithium titanium-based active material.

US Pat. No. 10,249,874

COMPOSITE NEGATIVE ACTIVE MATERIAL, NEGATIVE ELECTRODE INCLUDING COMPOSITE NEGATIVE ACTIVE MATERIAL, AND LITHIUM SECONDARY BATTERY INCLUDING NEGATIVE ELECTRODE

SAMSUNG ELECTRONICS CO., ...

1. A composite negative active material consisting of:a silicon-containing negative active material; and
a non-metal doped metal phosphate, wherein the non-metal doped metal phosphate comprises two or more metals,
wherein an amount of the non-metal doped metal phosphate is less than 10 parts by weight, based on 100 parts by weight of the silicon-containing negative active material.

US Pat. No. 10,249,873

COMPOSITE POSITIVE ACTIVE MATERIAL, POSITIVE ELECTRODE INCLUDING THE SAME, AND LITHIUM BATTERY INCLUDING THE POSITIVE ELECTRODE

SAMSUNG ELECTRONICS CO. L...

1. A composite positive active material comprising a composite represented by Formula 1:?Li2MO3.(1??)[xLi2MnO3.(1?x)LidNiaCObM?cO2]  Formula 1wherein, in Formula 1,M is Ti or Zr;
M? is Mn, V, Mg, Ga, Si, W, Mo, Fe, Cr, Cu, Zn, Ti, Al, B, or a combination thereof;
0

US Pat. No. 10,249,872

SILICON-CARBON COMPOSITE, NEGATIVE ELECTRODE COMPRISING SAME, SECONDARY BATTERY USING SILICON-CARBON COMPOSITE, AND METHOD FOR PREPARING SILICON-CARBON COMPOSITE

LG CHEM, LTD., Seoul (KR...

1. A silicon-carbon composite comprising:a carbon assembly having a plurality of carbon nanowires or carbon nanotubes assembled, and having mesopores perforated in a length direction between a plurality of the carbon nanowires or the carbon nanotubes; and
a silicon-based material provided in the mesopores of the carbon assembly,
wherein a percentage of the mesopores provided with the silicon-based material is greater than or equal to 20% and less than or equal to 95% based on the total mesopores of the carbon assembly.

US Pat. No. 10,249,871

COMPOSITE, ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE USING THE COMPOSITE, ELECTRODE INCLUDING THE COMPOSITE OR ELECTROCHEMICAL ACTIVE MATERIAL COMPOSITE, LITHIUM BATTERY INCLUDING THE ELECTRODE, FIELD EMISSION DEVICE INCLUDING THE COMPOSITE, BIOSENSOR INC

SAMSUNG ELECTRONICS CO., ...

1. An electrochemically active material composite comprising a composite and an electrochemically active material, wherein the composite comprises particles comprising a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0 wherein the particles comprising a silicon oxide of the formula SiO2 and a silicon oxide of the formula SiOx wherein 0

US Pat. No. 10,249,870

ELECTRODE SHEET FOR LI-ION BATTERY AND LI-ION BATTERY INCLUDING THE SAME

CONTEMPORARY AMPEREX TECH...

1. An electrode sheet for a Li-ion battery, comprising a current collector and a diaphragm layer coated on the current collector, the current collector comprises a coating region (1) and at least one electrode tab region (2), the coating region is a region of the current collector which is coated with the diaphragm layer; characterized in that, the coating region (1) is adjoined with the electrode tab region (2), at least one stress releasing region is provided at an adjoining position of the coating region (1) and the at least one electrode tab region (2), and the stress releasing region is a groove (3) or a through-hole (4) provided at the adjoining position.

US Pat. No. 10,249,868

SECONDARY BATTERY INCLUDING CAP PLATE INCLUDING INVERSION PLATE

Samsung SDI Co., Ltd., Y...

1. A secondary battery comprising:an electrode assembly;
a case accommodating the electrode assembly;
a cap plate sealing the case and comprising an inversion plate;
an insulation plate comprising a short-circuit hole corresponding to the inversion plate and a first air hole spaced apart from the short-circuit hole and located along a top surface of the cap plate, the insulation plate being coupled to the top surface of the cap plate; and
a terminal plate coupled to a top surface of the insulation plate and electrically coupled to the electrode assembly,
wherein the first air hole is a hole coupling from a top portion of the inversion plate to the outside of the insulation plate, and
wherein the first air hole and the short-circuit hole extend in respective directions that are different from one another.

US Pat. No. 10,249,867

PRISMATIC SECONDARY BATTERY AND ASSEMBLED BATTERY USING THE SAME

SANYO Electric Co., Ltd.,...

1. A prismatic secondary battery comprising:a first flat-shaped winding electrode body in which a first positive electrode plate and a first negative electrode plate are wound with a first separator interposed therebetween;
a second flat-shaped winding electrode body in which a second positive electrode plate and a second negative electrode plate are wound with a second separator interposed therebetween;
a prismatic outer body that has an opening and that houses the first flat-shaped winding electrode body and the second flat-shaped winding electrode body;
a sealing plate that seals the opening;
a positive electrode terminal that is electrically connected to the first positive electrode plate and the second positive electrode plate and attached to the sealing plate;
a positive electrode current collector that electrically connects the first positive electrode plate and the second positive electrode plate and the positive electrode terminal;
a negative electrode terminal that is electrically connected to the first negative electrode plate and the second negative electrode plate and attached to the sealing plate; and
a negative electrode current collector that electrically connects the first negative electrode plate and the second negative electrode plate and the negative electrode terminal,
wherein the first flat-shaped winding electrode body includes a plurality of first positive electrode tab portions and a plurality of first negative electrode tab portions at one end in a direction in which a winding axis of the first flat-shaped winding electrode body extends, and
wherein the second flat-shaped winding electrode body includes a plurality of second positive electrode tab portions and a plurality of second negative electrode tab portions at one end in a direction in which a winding axis of the second flat-shaped winding electrode body extends,
the first flat-shaped winding electrode body and the second flat-shaped winding electrode body are housed in the prismatic outer body so that the winding axis of the first flat-shaped winding electrode body and the winding axis of the second flat-shaped winding electrode body are disposed in a direction substantially perpendicular to the sealing plate,
the plurality of first positive electrode tab portions and the plurality of first negative electrode tab portions are located on one end of the first flat-shaped winding electrode body closer to the sealing plate than the other end, and
the plurality of second positive electrode tab portions and the plurality of second negative electrode tab portions are located on one end of the second flat-shaped winding electrode body closer to the sealing plate than the other end,
wherein the positive electrode current collector includes a first connecting portion connected to the positive electrode terminal, and a second connecting portion welded to the plurality of first positive electrode tab portions,
the first connecting portion is spaced away from the second connecting portion in a longitudinal direction of the sealing plate, and
a distance between the sealing plate and the second connecting portion is greater than a distance between the sealing plate and the first connecting portion in the direction substantially perpendicular to the sealing plate.

US Pat. No. 10,249,866

STORAGE BATTERY MODULE

HONDA MOTOR CO., LTD., T...

1. A storage battery module comprising:a storage battery group in which storage batteries are stacked in a stacking direction;
end plates located at both ends in the stacking direction of the storage battery group;
a coupling band coupled to the end plates, thereby coupling the end plates to each other, the coupling band having an inside surface that faces upper surfaces of the storage batteries; and
a pressing device that presses the storage battery group, wherein
the pressing device includes pin-shaped members that extend and protrude from the inside surface of the coupling band in a direction orthogonal to the stacking direction and that press the storage batteries in an identical direction, the inside surface of the coupling band being spaced apart from the upper surfaces of the storage batteries, the pressing device including a fixing portion that fixes the pin-shaped members to the coupling band.

US Pat. No. 10,249,865

BUS BAR MODULE

YAZAKI CORPORATION, Mina...

1. A bus bar module comprising:a plurality of bus bar cases made of a resin, each bus bar case configured to house a bus bar to connect a positive electrode of a battery cell and a negative electrode of an adjacent battery cell among battery cells arrayed such that the positive electrodes and the negative electrodes of the battery cells are arranged alternately;
a first engagement portion provided to one of the plurality of bus bar cases;
a first connecting member having flexibility and configured to connect the plurality of bus bar cases;
a plurality of insulating covers made of a resin, the insulating covers configured to cover openings of the plurality of bus bar cases and including a second engagement portion to be engaged with the first engagement portion;
a second connecting member having flexibility and configured to connect the plurality of insulating covers; and
a pair of first ribs provided to extend downward from an inner surface of each of the insulating covers located adjacent to each other while interposing the second connecting member in between, the pair of first ribs configured to be in contact respectively with inner surfaces of paired walls of the corresponding bus bar case, the walls extending in a direction of arrangement of the bus bar cases and facing each other, wherein
the insulating covers are provided with a second rib facing the second engagement portion in such a manner that the first engagement portion on the bus bar case is nipped between the second rib and the second engagement portion.

US Pat. No. 10,249,864

BATTERY PACK

TOYOTA JIDOSHA KABUSHIKI ...

1. A battery pack comprising:a first battery cell;
a second battery cell stacked relative to the first battery cell; and
a spacer having a wavy cross-sectional shape configured of projecting shapes that project toward the first battery cell and the second battery cell alternately,
the spacer being interposed between the first battery cell and the second battery cell,
the spacer including:
a first projection configured to project toward the first battery cell, the first projection being configured to be in contact with the first battery cell;
a second projection being disposed at a position apart from the first projection, the second projection being configured to project toward the second battery cell, the second projection being configured to be in contact with the second battery cell;
a third projection that is adjacent to the first projection among a plurality of the projecting shapes included in the spacer, the third projection being disposed between the first projection and the second projection, the third projection being configured to project toward the second battery cell, the third projection being configured to be in contact with the second battery cell;
a first inclined portion configured to extend in an oblique direction relative to a stacking direction of the first battery cell and the second battery cell, the first inclined portion being configured to connect the first projection and the third projection;
a fourth projection that is adjacent to the second projection among the plurality of the projecting shapes included in the spacer, the fourth projection being disposed between the first projection and the second projection, the fourth projection being configured to project toward the first battery cell, the fourth projection being configured to be in contact with the first battery cell;
a second inclined portion configured to extend in an oblique direction relative to the stacking direction of the first battery cell and the second battery cell, the second inclined portion being configured to connect the second projection and the fourth projection;
a fifth projection that is disposed between the third projection and the fourth projection, the fifth projection being configured to project toward the first battery cell, the fifth projection being configured to be disposed out of contact with the first battery cell; and
a sixth projection that is disposed between the third projection and the fourth projection, the sixth projection being configured to project toward the second battery cell, the sixth projection being configured to be disposed out of contact with the second battery cell,
the spacer being configured such that, when the first battery cell and the second battery cell expand, the fifth projection comes into contact with the first battery cell and the sixth projection comes into contact with the second battery cell, wherein
a contact area between the first projection and the first battery cell is larger than a contact area between the third projection and the second battery cell, and a contact area between the second projection and the second battery cell is lager than a contact area between the fourth projection and the first battery cell.

US Pat. No. 10,249,862

POROUS MEMBRANES FILLED WITH NANO-PARTICLES AND RELATED METHODS

Celgard, LLC, Charlotte,...

1. A membrane comprising:a porous membrane or layer made of a polymeric material having a plurality of surface treated and then wax-coated particles having an average particle size of less than about 1 micron dispersed therein, wherein the wax is polyethylene, polypropylene, or a combination of polyethylene and polypropylene and has a molecular weight of from 800 to 5000.

US Pat. No. 10,249,861

RECHARGEABLE BATTERY

Samsung SDI Co., Ltd., G...

1. A rechargeable battery comprising:an electrode assembly;
a case having an opening at one side and including the electrode assembly; and
a cap assembly including:
a cap plate for closing and sealing the opening of the case, wherein the cap plate comprises a circumferential surface,
a vent portion that is welded with weaker welding strength in at least some of a boundary between the cap plate and the case than the rest of the boundary, wherein the vent portion has a welding strength that releases at a selected pressure, and
at least one protruding portion that protrudes from the circumferential surface of the cap plate towards the inner wall of the case, and wherein the protruding portion corresponds to the vent portion of the cap assembly along a predetermined area of the circumferential surface.

US Pat. No. 10,249,860

CARTRIDGE FRAME HAVING DOUBLE SIDEWALL STRUCTURE AND BATTERY MODULE HAVING THE SAME

LG Chem, Ltd., (KR)

1. A cartridge frame which is inserted between a plurality of unit battery cells stacked, the cartridge frame comprising:an inter-cell separation plate with a planar shape inserted between adjacent unit battery cells to separate the adjacent unit battery cells; and
a sidewall part extending in a direction perpendicular to the planar surface of the inter-cell separation plate at an edge other than an edge of a direction in which an electrode terminal of the battery cell is drawn, among edges of the inter-cell separation plate,
wherein for at least a portion of the sidewall part, an inner sidewall coming into contact with a side surface of the unit battery cell is made from metal, and an outer sidewall facing the inner sidewall is made from plastic.

US Pat. No. 10,249,859

BATTERY BUILT-IN BOARD AND METHOD FOR MANUFACTURING THE SAME

SHINKO ELECTRIC INDUSTRIE...

1. A battery built-in board comprising:a battery component comprising a battery and an insulation part covering the battery;
an insulation layer covering the battery component; and
a wiring layer formed on an upper surface of the insulation layer,
wherein rigidity of the insulation part is lower than that of the insulation layer,
wherein the battery comprises:
a plus electrode;
a minus electrode;
a cathode connected to the plus electrode;
an anode connected to the minus electrode;
an electrolyte layer provided between the anode and cathode;
a protective layer covering the cathode, the anode, and the electrolyte layer; and
a substrate on which the plus electrode, the minus electrode, the cathode, the anode, the electrolyte layer, and the protective layer are formed,
wherein the battery component further comprises:
a first connection electrode connected to the plus electrode; and
a second connection electrode connected to the minus electrode,
wherein the insulation part is formed on the protective layer, the first connection electrode, the second connection electrode, the plus electrode, the minus electrode, the cathode, the anode, the electrolyte layer, and the protective layer are embedded in the insulation part with an upper surface of the first connection electrode and an upper surface of the second connection electrode exposed from the insulation part,
wherein a first via hole and a second via hole are formed in the insulation layer, the first via hole communicating with the upper surface of the first connection electrode, and the second via hole communicating with the upper surface of the second connection electrode, and
wherein a first via conductor is provided in the first via hole and connects the wiring layer to the first connection electrode, and a second via conductor is provided in the second via hole and connects the wiring layer to the second connection electrode.

US Pat. No. 10,249,858

BATTERY SUPPORT STRUCTURE

HONDA MOTOR CO., LTD., T...

1. A battery support structure comprising:a pedestal section configured to come in contact with at least a portion of a first surface of a battery in order to support the battery;
a locking protruding part formed at the pedestal section so as to be disposed along a second surface of the battery neighboring the first surface when the battery is supported on the pedestal section;
a locking part that includes an inserting part arranged to be inserted in a first locking hole formed in the locking protruding part and that is configured to come in contact with at least a portion of a third surface of the battery facing the opposite side of the first surface when the battery is supported on the pedestal section; and
a welding section fixed in a state in which the locking protruding part and the pedestal section are welded to each other,
wherein the battery is supported in a state in which the inserting part is inserted in the first locking hole,
a second locking hole is formed in the locking protruding part at a position deviated a predetermined distance from the first locking hole toward a side closer to the third surface of the battery when the battery is supported on the pedestal section, and
the welding section is formed so as to intersect in a first direction and a second direction, the first direction being a direction parallel with a plane of the first surface of the battery and a plane of the third surface of the battery when the battery is supported on the pedestal section, and the second direction being a direction perpendicular to the first direction.

US Pat. No. 10,249,857

BATTERY BUS BAR DESIGN AND LASER WELDING

GM GLOBAL TECHNOLOGY OPER...

1. A method of connecting a bus bar to a cell tab of a battery cell, comprising:forming a metallic bus bar having a pair of 180 degree bend regions that each define a channel, the pair of 180 degree bend regions each having a cut-out region defining an opening having opposing edge portions;
inserting a pair of thin plate-like cell tabs of a pair of battery cells into respective channels of the metallic bus bar; and
welding each of the pair of thin plate-like cell tabs to at least one of the opposing edge portions of the respective cut-out regions.

US Pat. No. 10,249,856

ASSEMBLED BATTERY

Panasonic Intellectual Pr...

1. An assembled battery comprising:a battery block configured by stacking a plurality of single batteries; and
fixing components fixing the plurality of the single batteries,
wherein the fixing components include a pair of end plates disposed at both ends in a stacked direction of the plurality of the single batteries and in an elongated direction of the battery block, and a metal band configured to compress the plurality of the single batteries by coupling end parts of the pair of the end plates to each other,
each of the pair of the end plates has a peripheral part and a central part, and
the pair of the end plates respectively contact both end single batteries located at both ends in the stacked direction at the peripheral parts, and are respectively separated from both end single batteries at the central parts,
wherein one of the end plates is configured of at least two kinds of different metal materials, and one of the at least two kinds of different materials having a higher hardness is disposed at an inner side contacting the battery block,
wherein the at least two kinds of different metal materials are steel and aluminum, and the one of the at least two kinds of different metal materials having a higher hardness is steel,
wherein the steel has a recess at the central part, the aluminum has a recess at the central part corresponding to the recess of the steel and a plate surface at an outer side.

US Pat. No. 10,249,855

FLEXIBLE BATTERY COVER WITH INTEGRAL LID, METHOD OF CONSTRUCTION THEREOF, AND METHOD OF ENCLOSING A BATTERY THEREWITH

Federal-Mogul Powertrain ...

1. A flexible, insulative battery cover for a vehicle battery assembly, comprising:a flexible, tubular textile wall having a cavity extending between a bottom end and an open top end of said wall;
a flexible textile lid having a free end and an opposite end attached to said wall via a hinge, said lid being pivotal via said hinge between an open position, exposing said open top end of said wall, and a closed position, substantially closing off said top end;
a fastener, formed of material separate from said lid, fixed to said lid adjacent said free end, said fastener being configured for releasable attachment to a first elongate fastener member of the vehicle battery assembly; and
wherein said wall has a plurality of through openings, a first of said openings being adjacent said hinge and a second of said openings being adjacent said free end, wherein said first and second openings are configured for respective receipt of the first elongate fastener member and a separate second elongate fastener member therethrough, and further including a pair of openings configured for receipt of battery terminals therethrough.

US Pat. No. 10,249,854

SUPPORT MEMBER FOR BATTERY PACK TOP HOUSING

MILWAUKEE ELECTRIC TOOL C...

1. A battery pack connectable to and supportable by a hand-held power tool, the battery pack comprising:a plastic battery pack housing that includes a battery pack top housing, the battery pack top housing including a support portion connectable to a complementary support portion of the hand-held power tool and a support member insert molded to be included within the battery pack top housing, the support member reinforcing the support portion of the battery pack top housing, the support member being made of a different material than the plastic battery pack housing,
wherein the support member includes a first portion, a second portion, a third portion, a fourth portion, and a fifth portion,
wherein the first portion is integrally formed with the second portion and the third portion,
wherein the second portion is approximately parallel to the third portion and the fourth portion is approximately parallel to the fifth portion, and
wherein the second portion is integrally formed with the fourth portion and the third portion is integrally formed with the fifth portion, and the second portion is approximately perpendicular to the fourth portion and the third portion is approximately perpendicular to the fifth portion.

US Pat. No. 10,249,853

POWER STORAGE DEVICE

KABUSHIKI KAISHA TOYOTA J...

1. An electricity storage device comprising:one or more unit electricity storage portions, the one or more unit electricity storage portions including an electrode assembly in which a positive electrode and a negative electrode are stacked and layered while being insulated from each other and a case configured to accommodate the electrode assembly; and
a load applying mechanism that applies, to the electrode assembly, a load in a lamination direction in which the positive electrode and the negative electrode are stacked in the electrode assembly, wherein
the load applying mechanism includes:
a pair of restraint plates, which respectively contact opposite ends of a single unit electricity storage portion in the lamination direction or which respectively contact a first electricity storage portion arranged at a first end of a plurality of unit electricity storage portions in the lamination direction and a second electricity storage portion arranged at a second end of the plurality of unit electricity storage portions in the lamination direction,
four bolts, which are respectively inserted through four corners of the pair of restraint plates, and
four nuts, which are threaded to the respective bolts,
wherein
the negative electrode includes
a metal foil, and
an active material layer that covers at least part of the metal foil and contains a carbon-based material as an active material,
a density of the carbon-based material in the active material layer is 1.2 g/cm3 or higher,
a degree of orientation that is defined as a ratio (I(100)/I(002)) of an X-ray diffraction intensity I(100) of a (100) plane to a diffraction intensity I(002) of a (002) plane in the active material layer is lower than or equal to 0.3, and
the load applied by the load applying mechanism is greater than or equal to 0.2 MPa.

US Pat. No. 10,249,852

SECONDARY BATTERY INCLUDING CONNECTOR COUPLED TO ELECTRODE ASSEMBLY AND CURRENT COLLECTOR

Samsung SDI Co., Ltd., Y...

1. A secondary battery comprising:a case having an internal space;
an electrode assembly inserted into the case and including a first electrode plate, a second electrode plate, and a separator between the first electrode plate and the second electrode plate;
an electrode tab electrically connected to the electrode assembly;
a cap plate sealing the case;
a current collector electrically connected to the electrode tab;
an electrode terminal electrically connected to the current collector and configured to pass through the cap plate to protrude toward the outside along an extension direction of the electrode terminal; and
a connector having an end coupled to the electrode assembly and an other end coupled to the current collector, the connector comprising a fastening portion having a protrusion shaped as a triangular pillar and extending through the current collector along the extension direction of the electrode terminal.

US Pat. No. 10,249,851

STACKED BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A stacked battery comprising:a first electrode body including
a plurality of positive electrode plates,
a plurality of negative electrode plates, and
a plurality of separators,
each of the positive electrode plates and each of negative electrode plates being alternately stacked with each of the separators interposed between each of the positive electrode plates and each of the negative electrode plates;
a second electrode body including
a plurality of positive electrode plates,
a plurality of negative electrode plates, and
a plurality of separators,
each of the positive electrode plates and each of negative electrode plates being alternately stacked with each of the separators interposed between each of the positive electrode plates and each of the negative electrode plates;
the second electrode body provided above the first electrode body,
each positive electrode plate including a positive electrode protruding portion protruding more laterally than the negative electrode plate,
each negative electrode plate including a negative electrode protruding portion protruding more laterally than the positive electrode plate;
a first current collecting case being electrically conductive, the first current collecting case including a first facing portion facing the first electrode body in a stacking direction of the first electrode body and the second electrode body;
a second current collecting case being electrically conductive, the second current collecting case housing the first electrode body, the second current collecting case being disposed between the first electrode body and the second electrode body, the second current collecting case being configured to be electrically insulated from the first current collecting case, the second current collecting case including a second facing portion facing one of the first electrode body and the second electrode body in the stacking direction; and
a third current collecting case being electrically conductive, the third current collecting case housing the second electrode body, the third current collecting case being configured to be electrically insulated from the second electrode body, the third current collecting case including a third facing portion facing the second electrode body in the stacking direction,
the first current collecting case, the second current collecting case, and the third current collecting case being stacked in this order in the stacking direction,
the first current collecting case including a first positive electrode wall portion, the first positive electrode wall portion extending from an edge portion of the first facing portion such that the first positive electrode wall portion covers a first side portion where the positive electrode protruding portion of the first electrode body is located, an inner surface of the first positive electrode wall portion being electrically connected to an edge side of the positive electrode protruding portion of the first electrode body,
the second current collecting case including a second positive electrode wall portion, the second positive electrode wall portion extending from an edge portion of the second facing portion such that the second positive electrode wall portion covers a first side portion where the positive electrode protruding portion of the second electrode body is located, an inner surface of the second positive electrode wall portion being electrically connected to an edge side of the positive electrode protruding portion of the second electrode body, the second current collecting case including a first negative electrode wall portion, the first negative electrode wall portion extending from an edge portion of the second facing portion such that the first negative electrode wall portion covers a second side portion where the negative electrode protruding portion of the first electrode body is located, an inner surface of the first negative electrode wall portion being electrically connected to an edge side of the negative electrode protruding portion of the first electrode body,
the third current collecting case including a second negative electrode wall portion, the second negative electrode wall portion extending from an edge portion of the third facing portion such that the second negative electrode wall portion covers a second side portion where the negative electrode protruding portion of the second electrode body is located, an inner surface of the second negative electrode wall portion being electrically connected to an edge side of the negative electrode protruding portion of the second electrode body.

US Pat. No. 10,249,850

DISPLAY APPARATUS AND PORTABLE TERMINAL

Samsung Display Co., Ltd....

1. A display apparatus, comprising:a display panel configured to display an image
a first member under the display panel, the first member including a center portion and an edge portion surrounding the center portion, the center portion having a thickness greater than a thickness of the edge portion, the thickness of the center portion and the thickness of the edge portion being in a direction perpendicular to the display panel; and
a second member under the first member and overlapping with the edge portion.

US Pat. No. 10,249,849

ORGANIC LIGHT EMITTING DISPLAY DEVICE

LG DISPLAY CO., LTD., Se...

1. An organic light emitting display device comprising:a first electrode and a second electrode on a substrate, the first electrode being opposite to the second electrode; and
at least one emission part between the first electrode and the second electrode, the at least one emission part including at least one organic layer,
wherein the at least one organic layer comprises a peak wavelength of electroluminescence (EL) spectrum (PWES) structure where a moving range of a peak wavelength of an EL spectrum emitted from the at least one emission part is set based on at least one of a thickness and a content of a dopant of the at least one emission part, and
wherein the at least one emission part includes two emission parts, the two emission parts including a plurality of emission layers having a same wavelength range or different wavelength ranges.

US Pat. No. 10,249,848

ORGANIC LIGHT-EMITTING PANEL AND METHOD FOR PRODUCING SAME

JOLED INC., Tokyo (JP)

1. An organic light-emitting panel, comprising:a first electrode that is light-reflecting;
a functional layer having a single layer or multi-layer structure, located on the first electrode;
an organic light-emitting layer located on the functional layer, the organic light-emitting layer including a red organic light-emitting layer portion defining a red organic light-emitting element, a green organic light-emitting layer portion defining a green organic light-emitting element, and a blue organic light-emitting layer portion defining a blue organic light-emitting element;
a second electrode that is light-transmitting, located above the organic light-emitting layer;
a first layer located on the second electrode;
a second layer located on the first layer;
a sealing layer located on the second layer, the sealing layer composed of aluminum oxide;
a resin sealing layer located on the sealing layer; and
a substrate located on the resin sealing layer, the substrate being adhered to the sealing layer via the resin sealing layer, wherein
a refractive index of the second electrode is at least 2.0 and no greater than 2.4,
a refractive index of the first layer is at least 1.3 and no greater than 1.6,
a refractive index of the second layer is at least 1.7 and no greater than 2.1,
the refractive index of the first layer is lower than the refractive index of the second electrode, and a difference between the refractive index of the first layer and the refractive index of the second electrode is at least 0.4 and no greater than 1.1,
the refractive index of the first layer is lower than the refractive index of the second layer, and a difference between the refractive index of the first layer and the refractive index of the second layer is at least 0.1 and no greater than 0.8,
the first layer includes metal fluoride and has thickness of at least 75 nm and no greater than 120 nm,
a thickness of the functional layer is different below each of the red organic light-emitting layer portion, the green organic light-emitting layer portion, and the blue organic light-emitting layer portion, the thickness being set such that a resonator structure within each of the red organic light-emitting element, the green organic light-emitting element, and the blue organic light-emitting element is either a 1st cavity structure or a 2nd cavity structure,
a maximum thickness of the functional layer is no greater than 70 nm, and
the thickness of the first layer, the difference between the refractive index of the first layer and the refractive index of the second electrode, and the difference between the refractive index of the first layer and the refractive index of the second layer produce interference between light travelling along a first optical pathway and light travelling along a second optical pathway, the light travelling along the first optical pathway not being reflected at an interface between the second electrode and the first layer, the light travelling along the second optical pathway being reflected at the interface between the second electrode and the first layer and reflected by the first electrode.

US Pat. No. 10,249,847

ORGANIC LIGHT-EMITTING DIODE, ORGANIC LIGHT MODULE, AND METHOD FOR PRODUCING AN ORGANIC LIGHT-EMITTING DIODE

OSRAM OLED GMBH, Regensb...

1. An organic light-emitting diode comprisinga substrate having a top side and one or a plurality of substrate side surfaces running transversely with respect to the top side, wherein the top side and the substrate side surfaces are connected to one another in each case via a substrate edge, and
an organic layer sequence applied to the top side and having an emitter layer, which generates electromagnetic radiation during intended operation of the light-emitting diode, wherein the radiation is coupled out from the organic light-emitting diode via a luminous surface, wherein
in a plan view of the luminous surface the organic layer sequence adjoins at least a partial region of at least one substrate edge, wherein in the partial region the luminous surface extends at least as far as the corresponding substrate edge,
an encapsulation formed in an uninterrupted and continuous fashion is applied to the organic layer sequence,
the encapsulation, at least in the region of the substrate edge adjoining the organic layer sequence, is led right onto the associated substrate side surface, at least partly covers the latter and is in direct contact with the substrate side surface.

US Pat. No. 10,249,846

OLED PACKAGING METHOD AND OLED PACKAGE STRUCTURE

WUHAN CHINA STAR OPTOELEC...

1. An organic light-emitting display (OLED) packaging method, comprising the following steps:Step 1: providing a OLED device and forming a first barrier layer on the OLED device such that the first barrier layer covers an entire surface of the OLED device;
Step 2: forming a first silicon-doped diamond-like carbon layer on the first barrier layer such that the first silicon-doped diamond-like carbon layer covers an entire surface of the first barrier layer;
Step 3: forming a diamond-like carbon scattering layer on the first silicon-doped diamond-like carbon layer;
Step 4: forming a first organic buffer layer on the first silicon-doped diamond-like carbon layer and the diamond-like carbon scattering layer such that the first organic buffer layer completely covers the first silicon-doped diamond-like carbon layer and the diamond-like carbon scattering layer; and
Step 5: forming a second barrier layer on the first organic buffer layer, such that the second barrier layer covers an entire surface of the first organic buffer layer.

US Pat. No. 10,249,845

OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT

OSRAM OLED GmbH, Regensb...

1. An optoelectronic component, comprisingan electrically conductive layer,
an electrically insulating layer formed above a partial region from the electrically conductive layer,
an electrically weakly conductive encapsulation layer formed outside the partial region on the electrically conductive layer and above the partial region on the electrically insulating layer,
a first electrode formed above the partial region on the electrically weakly conductive encapsulation layer,
an organic functional layer structure formed on the first electrode, and
a second electrode formed above the partial region on the organic functional layer structure and where the second electrode is formed outside the partial region on the electrically weakly conductive encapsulation layer.

US Pat. No. 10,249,844

LIGHT-EMITTING DISPLAY PANEL

INNOLUX CORPORATION, Mia...

1. A light-emitting display panel, comprising:a substrate comprising a display area and a peripheral area surrounding the display area, and the substrate having a top surface;
a light-emitting display structure disposed on the display area;
a first section wall disposed on the peripheral area and surrounding the light-emitting display structure, wherein the first section wall is dash-circular shape;
an enclosed wall disposed on the peripheral area, wherein the enclosed wall surrounds the first section wall and is positioned outside the first section wall; and
a first inorganic material layer covering the light-emitting display structure and a portion of the top surface outside the enclosed wall.

US Pat. No. 10,249,843

DISPLAY DEVICE WITH LIGHT TRANSMISSION AREA

Samsung Display Co., Ltd....

1. A display device, comprising:a substrate comprising a first area displaying an image and a second area adjacent to the first area, the second area transmitting external light;
a first electrode and a second electrode disposed in the first area and overlapping each other;
an emission layer disposed between the first electrode and the second electrode in the first area;
a first semiconductor layer disposed in the first area; and
a second semiconductor layer disposed in the second area,
wherein the second semiconductor layer is not connected to the first electrode and the second electrode.

US Pat. No. 10,249,842

ORGANIC EL DEVICE, ORGANIC EL LIGHTING PANEL, ORGANIC EL LIGHTING APPARATUS, AND ORGANIC EL DISPLAY

NEC Lighting, Ltd., Toky...

1. An organic EL (electro-luminescence) device comprising: a first substrate; a second substrate; one or more organic EL elements; and a sealing layer, each of the one or more organic EL elements comprising an organic EL layer and a pair of electrodes, one surface of the first substrate being a mounting surface on which the one or more organic EL elements are disposed, the first substrate and the second substrate being laminated in such a manner that the mounting surface of the first substrate and one surface of the second substrate face each other with the sealing layer interposed therebetween, the sealing layer sealing a gap between the first substrate and the second substrate along an entire periphery of a region facing the second substrate on the mounting surface of the first substrate and an entire periphery of a region facing the first substrate on the one surface of the second substrate facing the first substrate, wherein the organic EL device further comprises supporting layers, the supporting layers comprise a layer of material of the sealing layer, a layer of material of one of the pair of electrodes, a layer of material of the organic EL layer, and an insulating layer that is interposed between the pair of electrodes, and the supporting layers are disposed in such a manner that the supporting layers connect the mounting surface of the first substrate and the one surface of the second substrate facing the first substrate via the other one of the pair of electrodes.

US Pat. No. 10,249,841

DISPLAY APPARATUS

Joled Inc., Tokyo (JP)

1. A method of manufacturing a display apparatus, the method comprising:providing a plurality of organic electroluminescence devices on a drive panel, each organic electroluminescence device formed by:
providing a first electrode,
providing one or more organic layers including a light-emitting layer on the first electrode, and
providing a second electrode on the one or more organic layers,
providing an adhesive member on the plurality of organic electroluminescence devices, the adhesive member including a first adhesive portion that is comprised of an ultraviolet curing material and a second adhesive portion that is comprised of a heat-curable material, and
providing a sealing panel on a least a portion of the adhesive member, the sealing panel seals and faces the drive panel at a side of the second electrode,
wherein the ultraviolet curing material is cured by applying ultraviolet rays before curing the heat-curable material.

US Pat. No. 10,249,840

OPTICAL DEVICE

PIONEER CORPORATION, Kaw...

1. A method of manufacturing an optical device, comprising:forming a joining structure in which a first conductive film is constituted by a conductive material and a second conductive film that is constituted by a metal material are joined to each other,
wherein in the joining structure,
a part of the second conductive film comes into contact with the first conductive film, and a plurality of concave portions are provided in a contact surface of the second conductive film which comes into contact with the first conductive film,
wherein, in a cross-sectional shape of at least a part of the plurality of concave portions which are provided in the contact surface, at least a part between an opening end and a bottom portion of the concave portions has a cross-sectional width that is greater than a cross-sectional width of the opening end.

US Pat. No. 10,249,839

ORGANIC ELECTROLUMINESCENCE DEVICE, ORGANIC ELECTROLUMINESCENCE UNIT, AND ELECTRONIC APPARATUS

Joled Inc., Tokyo (JP)

1. An organic electroluminescence device comprising, in order:a first electrode;
a hole transport layer configured by a coated film;
an organic light-emitting layer configured by a coated film, the organic light-emitting layer having a hole current that is larger than an electron current;
an electron transport layer; and
a second electrode,
wherein a quotient of the hole current divided by the electron current is larger than 5, and
wherein the hole transport layer comprises an insolubilized hole transport layer.

US Pat. No. 10,249,838

WHITE ORGANIC LIGHT EMITTING DEVICE HAVING EMISSION AREA CONTROL LAYER SEPARATING EMISSION AREAS OF AT LEAST TWO EMISSION LAYERS

LG Display Co., Ltd., Se...

1. A white organic light emitting device, comprising:a first emission part between a first electrode and a second electrode; and
a second emission part on the first emission part,
wherein at least one among the first emission part and the second emission part comprises:
at least two emission layers, the at least two emission layers including a first emission layer including a first dopant and a first host, and a second emission layer including a second dopant different from the first dopant; and
a layer directly adjacent to the first emission layer, the layer having at least the first dopant of the first emission layer, and including a second host having a different hole mobility than a hole mobility of the first host.

US Pat. No. 10,249,837

LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

Semiconductor Energy Labo...

1. A light-emitting device comprising:a first electrode;
a first light-emitting layer, the first light-emitting layer comprising a first organic compound, a second organic compound, and a third organic compound;
a second light-emitting layer; and
a second electrode,
wherein the first light-emitting layer and the second light-emitting layer are interposed between the first electrode and the second electrode,
wherein a T1 level of the first organic compound is lower than a T1 level of the second organic compound and higher than a T1 level of the third organic compound,
wherein a lifetime of an emission from the second organic compound is more than or equal to 5 psec and less than or equal to 15 psec where the lifetime is a time required for the emission from the second organic compound to decrease in intensity to 1/100 of an initial value thereof, and
wherein an emission color from the second light-emitting layer is different from an emission color from the first light-emitting layer.

US Pat. No. 10,249,836

PHOTODETECTOR

Tsinghua University, Bei...

1. A photodetector comprising:a substrate,
an interdigital electrode layer comprising a first interdigital electrode and a second interdigital electrode, wherein the first interdigital electrode and the second interdigital electrode are spaced from and staggered with each other; and
a photoactive layer;
wherein the interdigital electrode layer is sandwiched between the substrate and the photoactive layer, the first interdigital electrode comprises a first connection part and a plurality of first interdigital parts in connection with the first connection part, and the plurality of first interdigital parts are parallel with and spaced apart from each other; the second interdigital electrode comprises a second connection part and a plurality of second interdigital parts in connection with the second connection part, and the plurality of second interdigital parts are parallel with and spaced apart from each other; the plurality of first interdigital parts and the plurality of second interdigital parts are staggered and spaced apart from each other, a distance between adjacent one of the plurality of first interdigital parts and one of the plurality of the second interdigital parts is about 20 ?m.

US Pat. No. 10,249,835

DISPLAY DEVICE AND PORTABLE TERMINAL

Samsung Display Co., Ltd....

1. A display device comprising:a display panel comprising a first portion, a second portion extending from the first portion, and a third portion extending from the second portion and facing the first portion, at least one of the first portion, the second portion, and the third portion comprising a display area configured to display an image;
a body configured to be located between the first and third portions and being configured to be separably coupled to the display panel in a first state, being configured to be separably coupled to the display panel in a second state, and being configured to be separated from each of the first portion, the second portion, and the third portion of the display panel, the body comprising a first surface, a second surface facing the first surface, a third surface connecting the first and second surfaces, and a fourth surface facing the third surface;
a driver configured to drive the display panel; and
a printed circuit board configured to apply a signal to the driver to drive the display panel, wherein the display panel covers the first, second, and third surfaces of the body in the first state, and wherein the display panel covers the first, second, and fourth surfaces of the body in the second state.

US Pat. No. 10,249,834

CARBENE METAL COMPLEXES AS OLED MATERIALS

The University of Souther...

1. A [carbene]mM-(X—Y)n compound, wherein the [carbene] ligand is of formula
wherein
Ring D is an aromatic cyclic ring or a fused aromatic cyclic ring;
Z1 is selected from a bond, O, or S;
A1 and A2 can be C or N;
R1 and R2 are independently selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, aralkyl, CN, CF3, NR?2, NO2, OR?, SR?, halo, aryl, heteroaryl, substituted aryl, substituted heteroaryl, and a heterocyclic group; or alternatively, two adjacent R1 or R2 groups on the same or adjacent ring, together form independently a 5 or 6-member cyclic group, wherein the cyclic group is selected from cycloalkyl, cycloheteroalkyl, or heteroaryl; and wherein said cyclic group is optionally substituted by one or more substituents J, wherein each substituent J is independently selected from the group consisting of R?, CN, CF3, NR?2, NO2, OR?, and SR?, or alternatively, two J groups on adjacent ring atoms form a fused 5- or 6-membered aromatic group;
each R? is independently selected from the group consisting of halo, H, alkyl, alkenyl, alkynyl, heteroalkyl, aralkyl, aryl, and heteroaryl;
R3 is selected from the group consisting of hydrogen, alkyl, alkenyl, alkynyl, aralkyl, aryl, heteroaryl, substituted aryl, substituted heteroaryl, and a heterocyclic group;
a is 0, 1, 2, 3, or 4; c is 0, 1, or 2;
(X-Y) is selected from a photoactive ligand or an ancillary ligand; and
m is a value from 1 to a maximum number of ligands that can be attached to the metal M; and m+n is the maximum number of ligands that can be attached to the metal M.

US Pat. No. 10,249,833

PHTHALOCYANINE COMPOUND AND SYNTHESIS METHOD AND USE THEREOF

BOE TECHNOLOGY GROUP CO.,...

1. A synthesis method for a phthalocyanine compound consisting of a structure as represented by Formula I below,
wherein A represents a transition metal or a rare earth metal, and R1 represents a phenyl group, a naphthyl group, or a C4-C16 n-alkyl group, wherein the synthesis method comprises the steps of:

(1) reacting o-xylene with liquid bromine to produce a compound II of 4,5-dibromo-o-xylene;
(2) producing a compound III of 4,5-dibromo-o-phthalic acid from 4,5-dibromo-o-xylene under the action of potassium permanganate;
(3) reacting 4,5-dibromo-o-phthalic acid with R1Br in the presence of potassium hydroxide and a catalyst of tetraoctylammonium bromide to produce a compound IV;
(4) reacting the compound IV with cuprous cyanide to produce a compound V; and
(5) mixing and reacting the compound V with bis(diiminoisoindoline) and A(CH3COO)2 to produce a phthalocyanine compound consisting of a structure as represented by Formula I.

US Pat. No. 10,249,832

ORGANIC ELECTROLUMINESCENCE DEVICE AND NOVEL COMPOUND

IDEMITSU KOSAN CO., LTD.,...

1. A compound represented by the following formula (I):
wherein in the formula (I),
one or more pairs of adjacent two or more of R1 to R4 and R10 to R13 may form a substituted or unsubstituted, saturated or unsaturated ring;
R1 to R4, R10 to R13 and R17 that do not form the substituted or unsubstituted, saturated or unsaturated ring are independently a hydrogen atom, a substituted or unsubstituted aryl group including 6 to 20 ring carbon atoms or a substituted or unsubstituted monovalent heterocyclic group including 5 to 20 ring atoms;
two R17s may be the same or different; and
RA, RB, RC and RD are independently a substituted or unsubstituted aryl group including 6 to 20 ring carbon atoms.

US Pat. No. 10,249,831

ELECTRONIC DEVICE CONTAINING CYCLIC LACTAMS

Merck Patent GmbH, (DE)

1. An electronic device comprising at least one compound of the formula (1)or at least two compounds of the formula (1) that are connected via at least one common aromatic or heteroaromatic ring system Ar or at least two compounds of the formula (1) that have a common structural unitwhere the symbols used are as follows:X1, X2, X3, X4 are each independently CR or N;
Y at each instance is

Ar is the same or different at each instance and is an aromatic or heteroaromatic ring system which has 5-60 aromatic ring atoms and may be substituted by one or more R1 radicals;
Ar1is the same or different at each instance and is an aromatic or heteroaromatic ring system which has 5-30 aromatic ring atoms and may be substituted by one or more R1 radicals; at the same time, two Ar1 radicals bonded to the same nitrogen atom or phosphorus atom may also be bridged to one another by a single bond or a bridge selected from N(R1), C(R1)2 and O;
R is the same or different at each instance and is selected from the group consisting of H, D, F, Cl, Br, I, CN, CHO, NO2, Si(R2)3, B(OR2)2, N(Ar1)2, N(R1)2, C(?O)Ar1, C(?O)R1, P(?O)(Ar1)2, S(?O)Ar1, S(?O)(Ar1)2, CR2?CR2Ar1, C?CAr1, OSO2R1;
a straight-chain alkyl, alkoxy or thioalkyl group having 1 to 40 carbon atoms or a branched or cyclic alkyl, alkoxy or thioalkyl group having 3 to 40 carbon atoms or an alkenyl or alkynyl group having 2 to 40 carbon atoms, where the hydrocarbyl groups mentioned may each be substituted by one or more R1 radicals and where one or more nonadjacent CH2 groups may be replaced by R1C?CR1, —C?C—, Si(R1)2, Ge(R1)2, Sn(R1)2, C?O, C?S, C?Se, C?NR1, P(?O)(R1), SO, SO2, NR1, O, S or CONR1 and where one or more hydrogen atoms may be replaced by D, F, Cl, Br, I, CN or NO2;
an aromatic or heteroaromatic ring system which has 5 to 60 aromatic ring atoms and may be substituted in each case by one or more R1 radicals,
an aryloxy or heteroaryloxy group which has 5 to 60 aromatic ring atoms and may be substituted by one or more R1 radicals,
an aralkyl or heteroaralkyl group which has 5 to 60 aromatic ring atoms and may be substituted by one or more R1 radicals,
or a combination of these systems,
where two or more adjacent R substituents may form a monocyclic or polycyclic, aliphatic, aromatic or heteroaromatic ring system which may be substituted by one or more R1 radicals or
where the R substituent of X1 and/or the R substituent of X4 together with the adjacent N—Ar in each case may form a monocyclic or polycyclic, aliphatic, aromatic or heteroaromatic ring system which may be substituted by one or more R1 radicals;
R1 is in each case independently selected from the group consisting of H, D, F, CN, a straight-chain or branched alkyl group having 1 to 20 carbon atoms, a straight-chain or branched alkenyl group having 2 to 20 carbon atoms, an aromatic or heteroaromatic ring system which has 5 to 30 aromatic ring atoms and in which one or more hydrogen atoms may be replaced by D, F, Cl, Br, I, CN or a straight-chain or branched alkyl group having 1 to 10 carbon atoms or a straight-chain or branched alkenyl group having 2 to 10 carbon atoms,
where two or more adjacent R1 substituents together may form a mono- or polycyclic, aliphatic, aromatic or heteroaromatic ring system and
R2 is in each case independently selected from the group consisting of H, D or is an aliphatic, aromatic and/or heteroaromatic hydrocarbyl radical having 1 to 20 carbon atoms, where two or more R2 radicals together may also form a ring system.

US Pat. No. 10,249,830

CARBAZOLE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A carbazole-based compound represented by Formula 1:
wherein, in Formulae 1 and 2,
R1 to R8 are each independently selected from a group represented by Formula 2, hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q1)(Q2)(Q3), and at least one selected from R1 to R8 is a group represented by Formula 2,
ring A and ring B are each independently selected from a benzene, a naphthalene, an anthracene, and a phenanthrene,
R9 is selected from a group represented by Formula 2 and *-(L2)a2-Ar1,
L1 and L2 are each independently selected from a substituted or unsubstituted C3-C10 cycloalkylene group, a substituted or unsubstituted C1-C10 heterocycloalkylene group, a substituted or unsubstituted C3-C10 cycloalkenylene group, a substituted or unsubstituted C1-C10 heterocycloalkenylene group, a substituted or unsubstituted C6-C60 arylene group, a substituted or unsubstituted C1-C60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
a1 and a2 are each independently selected from 0, 1, 2, 3, 4, and 5,
Ar1 is selected from a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group,
R11 and R12 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, and —Si(Q4)(Q5)(Q6),
b11 and b12 are each independently an integer selected from 0 to 9, and
at least one substituent of the substituted C3-C10 cycloalkylene group, substituted C1-C10 heterocycloalkylene group, substituted C3-C10 cycloalkenylene group, substituted C1-C10 heterocycloalkenylene group, substituted C6-C60 arylene group, substituted C1-C60 heteroarylene group, substituted divalent non-aromatic condensed polycyclic group, substituted divalent non-aromatic condensed heteropolycyclic group, substituted C1-C60 alkyl group, substituted C2-C60 alkenyl group, substituted C2-C60 alkynyl group, substituted C1-C60 alkoxy group, substituted C3-C10 cycloalkyl group, substituted C1-C10 heterocycloalkyl group, substituted C3-C10 cycloalkenyl group, substituted C1-C10 heterocycloalkenyl group, substituted C6-C60 aryl group, substituted C6-C60 aryloxy group, substituted C6-C60 arylthio group, substituted C1-C60 heteroaryl group, substituted monovalent non-aromatic condensed polycyclic group, and substituted monovalent non -aromatic condensed heteropolycyclic group is selected from the group consisting of:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q14)(Q15), and —B(Q16)(Q17);
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a phenyl group, a biphenyl group, and a terphenyl group;
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a phenyl group, a biphenyl group, and a terphenyl group, each substituted with at least one selected from deuterium, —F, —CI, —Br, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-Cio cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q24)(Q25), and —B(Q26)(Q27); and
—Si(Q31)(Q32)(Q33), —N(Q34)(Q35), and —B(Q36)(Q37),
wherein Q1 to Q6, Q11 to Q17, Q21 to Q27, and Q31 to Q37 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a phenyl group, a biphenyl group, and a terphenyl group,
wherein, when R3 or R6 is a group represented by Formula 2; ring A and B are both a benzene; and a2 is 0, Ar1 is selected from a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, a substituted or unsubstituted biphenyl group, a substituted or unsubstituted terphenyl group, a substituted or unsubstituted pentalenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, a substituted or unsubstituted indacenyl group, a substituted or unsubstituted acenaphthyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted spiro-bifluorenyl group, a substituted or unsubstituted benzofluorenyl group, a substituted or unsubstituted dibenzofluorenyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted fluoranthenyl group, a substituted or unsubstituted triphenylenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted pentaphenyl group, a substituted or unsubstituted hexacenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted rubicenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted ovalenyl group, a substituted or unsubstituted pyrrolyl group, a substituted or unsubstituted thiophenyl group, a substituted or unsubstituted furanyl group, a substituted or unsubstituted imidazolyl group, a substituted or unsubstituted pyrazolyl group, a substituted or unsubstituted thiazolyl group, a substituted or unsubstituted isothiazolyl group, a substituted or unsubstituted oxazolyl group, a substituted or unsubstituted isoxazolyl group, a substituted or unsubstituted pyrazinyl group, a substituted or unsubstituted pyridazinyl group, a substituted or unsubstituted isoindolyl group, a substituted or unsubstituted indolyl group, a substituted or unsubstituted indazolyl group, a substituted or unsubstituted purinyl group, a substituted or unsubstituted quinolinyl group, a substituted or unsubstituted isoquinolinyl group, a substituted or unsubstituted benzoquinolinyl group, a substituted or unsubstituted phthalazinyl group, a substituted or unsubstituted naphthyridinyl group, a substituted or unsubstituted quinoxalinyl group, a substituted or unsubstituted quinazolinyl group, a substituted or unsubstituted cinnolinyl group, a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted phenanthridinyl group, a substituted or unsubstituted acridinyl group, a substituted or unsubstituted phenanthrolinyl group, a substituted or unsubstituted phenazinyl group, a substituted or unsubstituted benzimidazolyl group, a substituted or unsubstituted benzofuranyl group, a substituted or unsubstituted dibenzofuranyl group, a substituted or unsubstituted benzothiophenyl group, a substituted or unsubstituted dibenzothiophenyl group, a substituted or unsubstituted isobenzothiazolyl group, a substituted or unsubstituted benzoxazolyl group, a substituted or unsubstituted isobenzoxazolyl group, a substituted or unsubstituted triazolyl group, a substituted or unsubstituted tetrazolyl group, a substituted or unsubstituted oxadiazolyl group, a substituted or unsubstituted benzocarbazolyl group, a substituted or unsubstituted dibenzocarbazolyl group, a substituted or unsubstituted thiadiazolyl group, a substituted or unsubstituted imidazopyridinyl group, a substituted or unsubstituted imidazopyrimidinyl group, a substituted or unsubstituted indenocarbazolyl group, a substituted or unsubstituted indolocarbazolyl group, a substituted or unsubstituted indolodibenzofuranyl group, a substituted or unsubstituted indolodibenzothiophenyl group, and a substituted or unsubstituted indolodibenzosilolyl group,
where at least one substituent of the substituted biphenyl group, substituted terphenyl group, substituted pentalenyl group, substituted indenyl group, substituted naphthyl group, substituted azulenyl group, substituted heptalenyl group, substituted indacenyl group, substituted acenaphthyl group, substituted fluorenyl group, substituted spiro-bifluorenyl group, substituted benzofluorenyl group, substituted dibenzofluorenyl group, substituted phenalenyl group, substituted phenanthrenyl group, substituted anthracenyl group, substituted fluoranthenyl group, substituted triphenylenyl group, substituted pyrenyl group, substituted chrysenyl group, substituted naphthacenyl group, substituted picenyl group, substituted perylenyl group, substituted pentaphenyl group, substituted hexacenyl group, substituted pentacenyl group, substituted rubicenyl group, substituted coronenyl group, substituted ovalenyl group, substituted pyrrolyl group, substituted thiophenyl group, substituted furanyl group, substituted imidazolyl group, substituted pyrazolyl group, substituted thiazolyl group, substituted isothiazolyl group, substituted oxazolyl group, substituted isoxazolyl group, substituted pyrazinyl group, substituted pyridazinyl group, substituted isoindolyl group, substituted indolyl group, substituted indazolyl group, substituted purinyl group, substituted quinolinyl group, substituted isoquinolinyl group, substituted benzoquinolinyl group, substituted phthalazinyl group, substituted naphthyridinyl group, substituted quinoxalinyl group, substituted quinazolinyl group, substituted cinnolinyl group, substituted carbazolyl group, substituted phenanthridinyl group, substituted acridinyl group, substituted phenanthrolinyl group, substituted phenazinyl group, substituted benzimidazolyl group, substituted benzofuranyl group, substituted dibenzofuranyl group, substituted benzothiophenyl group, substituted dibenzothiophenyl group, substituted isobenzothiazolyl group, substituted benzoxazolyl group, substituted isobenzoxazolyl group, substituted triazolyl group, substituted tetrazolyl group, substituted oxadiazolyl group, substituted benzocarbazolyl group, substituted dibenzocarbazolyl group, substituted thiadiazolyl group, substituted imidazopyridinyl group, substituted imidazopyrimidinyl group, substituted an indenocarbazolyl group, substituted indolocarbazolyl group, substituted indolodibenzofuranyl group, substituted indolodibenzothiophenyl group, and substituted indolodibenzosilolyl group is selected from the group consisting of:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20 alkyl group, and a C1-C20 alkoxy group;
a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, an oxadiazolyl group, a triazine group, a dibenzofuranyl group, a dibenzothiophenyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group;
a phenyl group; a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, an imidazopyridinyl group, and an imidazopyrimidinyl group, each substituted with at least one selected from deuterium, —F, —CI, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10 alkyl group, a C1-C10 alkoxy group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyrazinyl group, a pyridazinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a quinoxalinyl group, a quinazolinyl group, a carbazolyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, an oxadiazolyl group, a dibenzofuranyl group, a dibenzothiophenyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, and —Si (Q31)(Q32)(Q33); and
—Si(Q1)(Q2)(Q3),
wherein Q1 to Q3 and Q31 to Q33 are each independently selected from a C1-C10 alkyl group, a C1-C10 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group, and
when R3 or R6 is a group represented by Formula 2; ring A and B are both a benzene; and a2 is selected from 1, 2, 3, 4, and 5, L2 is selected from the group consisting of:
a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a pyrrolylene group, a thiophenylene group, a furanylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a pyrazinylene group, a pyridazinylene group, an isoindolylene group, an indolylene group, an indazolylene group, a purinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a carbazolylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, a benzofuranylene group, a benzothiophenylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an oxadiazolylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a thiadiazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, an indenocarbazolylene group, an indolocarbazolylene group, an indolodibenzofuranylene group, an indolodibenzothiophenylene group, and an indolodibenzosilolylene group; and
a pentalenylene group, an indenylene group, a naphthylene group, an azulenylene group, a heptalenylene group, an indacenylene group, an acenaphthylene group, a fluorenylene group, a spiro-fluorenylene group, a benzofluorenylene group, a dibenzofluorenylene group, a phenalenylene group, a phenanthrenylene group, an anthracenylene group, a fluoranthenylene group, a triphenylenylene group, a pyrenylene group, a chrysenylene group, a naphthacenylene group, a picenylene group, a perylenylene group, a pentaphenylene group, a hexacenylene group, a pentacenylene group, a rubicenylene group, a coronenylene group, an ovalenylene group, a pyrrolylene group, a thiophenylene group, a furanylene group, an imidazolylene group, a pyrazolylene group, a thiazolylene group, an isothiazolylene group, an oxazolylene group, an isoxazolylene group, a pyrazinylene group, a pyridazinylene group, an isoindolylene group, an indolylene group, an indazolylene group, a purinylene group, a quinolinylene group, an isoquinolinylene group, a benzoquinolinylene group, a phthalazinylene group, a naphthyridinylene group, a quinoxalinylene group, a quinazolinylene group, a cinnolinylene group, a carbazolylene group, a phenanthridinylene group, an acridinylene group, a phenanthrolinylene group, a phenazinylene group, a benzimidazolylene group, a benzofuranylene group, a benzothiophenylene group, an isobenzothiazolylene group, a benzoxazolylene group, an isobenzoxazolylene group, a triazolylene group, a tetrazolylene group, an oxadiazolylene group, a dibenzofuranylene group, a dibenzothiophenylene group, a benzocarbazolylene group, a dibenzocarbazolylene group, a thiadiazolylene group, an imidazopyridinylene group, an imidazopyrimidinylene group, an indenocarbazolylene group, an indolocarbazolylene group, an indolodibenzofuranylene group, an indolodibenzothiophenylene group, and an indolodibenzosilolylene group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C20 alkyl group, a C1-C20 alkoxy group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclopentenyl group, a cyclohexenyl group, a phenyl group, a biphenyl group, a terphenyl group, a pentalenyl group, an indenyl group, a naphthyl group, an azulenyl group, a heptalenyl group, an indacenyl group, an acenaphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenalenyl group, a phenanthrenyl group, an anthracenyl group, a fluoranthenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, a naphthacenyl group, a picenyl group, a perylenyl group, a pentaphenyl group, a hexacenyl group, a pentacenyl group, a rubicenyl group, a coronenyl group, an ovalenyl group, a pyrrolyl group, a thiophenyl group, a furanyl group, an imidazolyl group, a pyrazolyl group, a thiazolyl group, an isothiazolyl group, an oxazolyl group, an isoxazolyl group, a pyridinyl group, a pyrazinyl group, a pyrimidinyl group, a pyridazinyl group, an isoindolyl group, an indolyl group, an indazolyl group, a purinyl group, a quinolinyl group, an isoquinolinyl group, a benzoquinolinyl group, a phthalazinyl group, a naphthyridinyl group, a quinoxalinyl group, a quinazolinyl group, a cinnolinyl group, a carbazolyl group, a phenanthridinyl group, an acridinyl group, a phenanthrolinyl group, a phenazinyl group, a benzimidazolyl group, a benzofuranyl group, a benzothiophenyl group, an isobenzothiazolyl group, a benzoxazolyl group, an isobenzoxazolyl group, a triazolyl group, a tetrazolyl group, an oxadiazolyl group, a triazinyl group, a dibenzofuranyl group, a dibenzothiophenyl group, a benzocarbazolyl group, a dibenzocarbazolyl group, a thiadiazolyl group, an imidazopyridinyl group, an imidazopyrimidinyl group, an indenocarbazolyl group, an indolocarbazolyl group, an indolodibenzofuranyl group, an indolodibenzothiophenyl group, an indolodibenzosilolyl —Si(Q31 )(Q32 )(Q33),
wherein Q31 to Q33 are each independently selected from a C1-C20 alkyl group, a C1-C20 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, a naphthyl group, a fluorenyl group, a spiro-fluorenyl group, a benzofluorenyl group, a dibenzofluorenyl group, a phenanthrenyl group, an anthracenyl group, a triphenylenyl group, a pyrenyl group, a chrysenyl group, and a carbazolyl group.

US Pat. No. 10,249,829

COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A compound represented by Formula 1:
wherein, in Formula 1,
X and Y are each independently selected from O, S, CR11R12, and NR13,
R1, R11, R12, and R13 are each independently selected from hydrogen, deuterium, a halogen atom, a nitro group, a cyano group, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C2-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C2-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, a substituted or unsubstituted C5-C60 carbocyclic group, and a substituted or unsubstituted C1-C60 heterocyclic group,
at least one selected from X, Y, and R1 comprises —P(Ph)2=Z,
Z is selected from O and S,
at least one substituent of the substituted C1-C60 alkyl group, the substituted C2-C60 group, the substituted C2-C60 alkynyl group, the substituted C1-C60 alkoxy group, the substituted C3-C10 cycloalkyl group, the substituted C2-C10 heterocycloalkyl group, the substituted C3-C10 cycloalkenyl group, the substituted C2-C10 heterocycloalkenyl group, the substituted C6-C60 aryl group, the substituted C6-C60 aryloxy group, the substituted C6-C60 arylthio group, the substituted C1-C60 heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, the substituted monovalent non-aromatic condensed heteropolycyclic group, the substituted or unsubstituted C5-C60 carbocyclic group, and the substituted or unsubstituted C1-C60 heterocyclic group is selected from the group consisting of:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10 cycloalkyl group, a C2-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C2-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q11)(Q12), —Si(Q13)(Q14)(Q15), and —B(Q16)(Q17);
a C3-C10 cycloalkyl group, C2-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C2-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group;
a C3-C10 cycloalkyl group, a C2-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C2-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C2-C10 heterocycloalkyl group, a C3-C10 a cycloalkenyl group, a C2-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q21)(Q22), —Si(Q23)(Q24)(Q25), and —B(Q26)(Q27); and
—P(?O)Q1Q2 and —P(?S)Q3Q4,
wherein Q1 to Q4, Q11 to Q17, and Q21 to Q27 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C2-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C2-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group.

US Pat. No. 10,249,828

ORGANIC ELECTROLUMINESCENT DEVICE

Merck Patent GmbH, (DE)

1. An organic electroluminescent device comprising cathode, anode and emitting layer, which consists of the following compounds:(A) at least one luminescent organic compound which has a separation between the lowest triplet state T1 and the first excited singlet state S1 of ?0.15 eV (TADF compound);
wherein the at least one TADF compound is a luminescent organic compound which is an aromatic compound which contains both donor and acceptor substituents, where the donor substituents are selected from the group consisting of diarylamino groups, heteroarylamino groups, carbazole groups and carbazole derivatives, which may in each case also be substituted, and where the acceptor substituents are selected from the group consisting of cyano groups and electron-deficient heteroaryl groups, which are optionally substituted, and which has a separation between the lowest triplet state T1 and the first excited singlet state S1 of <0.15 eV; and
(B) at least one compound of the formula (1),

where the following applies to the symbols used:
X is on each occurrence, identically or differently, CR or N, or a group X-X stands for a group of the following formula (2), with the proviso that at least one group X-X stands for a group of the formula (2) and that a maximum of one group X-X per ring stands for a group of the formula (2),

where the C atoms with the dashed bonds indicate the bonding of the group;
Y1, Y2 are selected on each occurrence, identically or differently, from the group consisting of CR2, NR, O, S, SiR2, BR, PR and P(?O)R;
E is selected on each occurrence, identically or differently, from the group consisting of a single bond, CR2, NR, O, S, SiR2, BR, PR and P(?O)R;
W is on each occurrence, identically or differently, CR or N;
R is selected on each occurrence, identically or differently, from the group consisting of H, D, F, Cl, Br, I, CN, NO2, N(Ar)2, N(R1)2, C(?O)Ar, C(?O)R1, P(?O)(Ar)2, a straight-chain alkyl, alkoxy or thioalkyl group having 1 to 40 C atoms or a branched or cyclic alkyl, alkoxy or thioalkyl group having 3 to 40 C atoms or an alkenyl or alkynyl group having 2 to 40 C atoms, each of which is optionally substituted by one or more radicals R1, where one or more non-adjacent CH2 groups is optionally replaced by R1C?CR1, C?C, Si(R1)2, C?O, C?S, C?NR1, P(?O)(R1), SO, SO2, NR1, O, S or CONR1 and where one or more H atoms is optionally replaced by D, F, CI, Br, I, CN or NO2, an aromatic or heteroaromatic ring system having 5 to 80, which may in each case be substituted by one or more radicals R?, an aryloxy or heteroaryloxy group having 5 to 60 aromatic ring atoms, which is optionally substituted by one or more radicals R1, or an aralkyl or heteroaralkyl group having 5 to 60 aromatic ring atoms, which is optionally substituted by one or more radicals R1, where two or more adjacent substituents R may optionally form a monocyclic or polycyclic, aliphatic, aromatic or heteroaromatic ring system, which is optionally substituted by one or more radicals R1;
R1 is selected on each occurrence, identically or differently, from the group consisting of H, D, F, Cl, Br, I, CN, NO2, N(Ar)2, N(R2)2, C(?O)Ar, C(?O)R2, P(?O)(Ar)2, a straight-chain alkyl, alkoxy or thioalkyl group having 1 to 40 C atoms or a branched or cyclic alkyl, alkoxy or thioalkyl group having 3 to 40 C atoms or an alkenyl or alkynyl group having 2 to 40 C atoms, each of which is optionally substituted by one or more radicals R2, where one or more non-adjacent CH2 groups is optionally replaced by R2C?CR2, C?C, Si(R2)2, C?O, C?S, C?NR2, P(?O)(R2), SO, SO2, NR2, O, S or CONR2 and where one or more H atoms is optionally replaced by D, F, Cl, Br, I, CN or NO2, an aromatic or heteroaromatic ring system having 5 to 60 aromatic ring atoms, which may in each case be substituted by one or more radicals R2, an aryloxy or heteroaryloxy group having 5 to 60 aromatic ring atoms, which is optionally substituted by one or more radicals R2, or an aralkyl or heteroaralkyl group having 5 to 60 aromatic ring atoms, where two or more adjacent substituents R1 may optionally form a monocyclic or polycyclic, aliphatic, aromatic or heteroaromatic ring system, which is optionally substituted by one or more radicals R2;
Ar is on each occurrence, identically or differently, an aromatic or heteroaromatic ring system having 5-30 aromatic ring atoms, which is optionally substituted by one or more non-aromatic radicals R2; two radicals Ar which are bonded to the same N atom or P atom here may also be bridged to one another by a single bond or a bridge selected from N(R2), C(R2)2, O or S; and
R2 is selected from the group consisting of H, D, F, CN, an aliphatic hydrocarbon radical having 1 to 20 C atoms, an aromatic or heteroaromatic ring system having 5 to 30 aromatic ring atoms, in which one or more H atoms is optionally replaced by D, F, Cl, Br, I or CN, where two or more adjacent substituents R2 may form a mono- or polycyclic, aliphatic, aromatic or heteroaromatic ring system with one another.

US Pat. No. 10,249,827

AZADIBENZOFURANS FOR ELECTRONIC APPLICATIONS

UDC Ireland Limited, Dub...

1. A compound of the formulawhereinB1 is N, or CR81,
B2 is N, or CR82,
B3 is N, or CR83,
B4 is N, or CR84,
B5 is N, or CR85,
B6 is N, or CR86,
B7 is N, or CR87,
B8 is N, or CR88,
R81, R82, R83, R84, R85, R86, R87 and R88 are independently of each other H, a C1-C25 alkyl group, which can optionally be substituted by E and or interrupted by D; a C6-C24 alkyl group, which can optionally be substituted by G, a C2-C30 heteroaryl group, which can optionally be substituted by G; or a group of formula -(A1)o-(A2)p-(A3)q-(A4)r-R16,
o is 0, or 1, p is 0, or 1, q is 0, or 1, r is 0, or 1,
A1, A2, A3 and A4 are independently of each other a C6-C24 arylene group, which can optionally be substituted by G, or a C2-C30 heteroarylene group, which can optionally be substituted by G;
R16 is —NR10R11, or —Si(R12)(R13) (R14), a C6-C24 aryl group, which can optionally be substituted by G; or a C2-C30 heteroarylene group, which can optionally be substituted by G;
R10 and R11 are independently of each other a C6-C24 aryl group, which can optionally be substituted by G; or a C2-C30 heteroaryl group, which can optionally be substituted by G;
R12, R13 and R14 are independently of each other a C1-C25 alkyl group, which can optionally be substituted by E and or interrupted by D; C6-C24 aryl group, which can optionally be substituted by G; or a C2-C30 heteroaryl group, which can optionally be substituted by G;
D is —CO—, —COO—, —S—, —SO—, —SO2—, —O—, —NR65—, —SiR70R71—, —POR72—, —CR63?CR64—, or —C?C—,
E is —OR69, —SR69, —NR65R66, —COR68, —COOR67, —CONR65R66, —CN, or F,
G is E, or a C1-C18 alkyl group, a C6-C24 aryl group, a C6-C24 aryl group, which is substituted by F, C1-C18 alkyl, or C1-C18 alkyl which is interrupted by O; a C2-C30 hereroaryl group, or a C2-C30 heteroaryl group, which is substituted by F, C1-C18 alkyl, or C1-C18 alkyl which is interrupted by —O—;
R63 and R64 are independently of each other H, C6-C18 aryl; C6-C18 aryl which is substituted by C1-C18 alkyl, or C1-C18 alkoxy; C1-C18 alkyl; or C1-C18 alkyl which is interrupted by —O—;
R65 and R66 are independently of each other a C6-C18 aryl group; a C6-C18 aryl which is substituted by C1-C18 alkyl, or C1-C18 alkoxy; a C1-C18 alkyl group; or a C1-C18 alkyl group, which is interrupted by —O—; or
R65 and R66 together fonn a five or six membered ring,
R67 is a C6-C18 aryl group; a C6-C18 aryl group, which is substituted by C1-C18 alkyl, or C1-C18 alkoxy; a C1-C18 alkyl group; or a C1-C18 alkyl group, which is interrupted by —O—,
R68 is H; n a C6-C18 aryl group; a C6-C18 aryl group, which is substituted by C1-C18 alkyl, or C1-C18 alkoxy; a C1-C18 alkyl group; or a C1-C18 alkyl group, which is interrupted by —O—,
R69 is a C6-C18 aryl; a C6-C18 aryl, which is substituted by C1-C18 alkyl, or C1-C18 alkoxy, a C1-C18 alkyl group; or a C1-C18 alkyl group, which is interrupted by —O—,
R70 and R71 are independently of each other a C1-C18 alkyl group, a C6-C18 aryl group, or a C6-C18 aryl group, which is substituted by C1-C18 alkyl, and
R72 is a C1-C18 alkyl group, a C6-C18 aryl group, or a C6-C18 aryl group, which is substituted by C1-C18 alkyl, with the proviso that
at least one of the substituents B1, B2, B3, B4, B5, B6, B7 and B8 represents N;
not more than two of the groups B1, B2, B3 and B4 represent N; and
not more than two of the groups B5, B6, B7 and B8 represent N; and
with the further proviso that at least one of the substituents R81, R82, R83, R84, R85, R86, R87 and R88 represent a group of formula -(A1)o-(A2)p-(A3)q-(A4)r-R16, wherein R16 represents a benzimidazo[1,2-a]benzimidazo-5-yl group, which can optionally be substituted by G; and/or at least one of the groups A1, A2, A3 and A4 represents a benzimidazo[1,2-a]benzimidazo-2,5-ylene group, which can optionally be substituted by G.

US Pat. No. 10,249,826

COMPOUND, ORGANIC ELECTROLUMINESCENT ELEMENT AND ELECTRONIC DEVICE

IDEMITSU KOSAN CO., LTD.,...

1. An organic electroluminescence device, comprising:an anode;
an emitting layer; and
a cathode,
wherein
wherein the emitting layer contains no metal complex,
the emitting layer comprises a first compound and a second compound,
the first compound is a delayed-fluorescent compound represented by a formula (1) below,
the first compound has a lower singlet energy than a singlet energy of the second compound, and
the second compound has at least one of a partial structure represented by a formula (21) below and a partial structure represented by a formula (22) below in one molecule,

where:
Ar11 and Ar12 are each independently a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted heterocyclic group having 5 to 30 ring atoms;
L1 is a single bond or a linking group, the linking group in L1 being a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 ring carbon atoms or a substituted or unsubstituted heterocyclic group having 5 to 30 ring atoms;
Y1 to Y12 are each independently a nitrogen atom or CR1;
X1 is an oxygen atom, a sulfur atom, N—R10, CR11R12, SiR13R14 or GeR15R16;
R1 and R10 to R16 are each independently a hydrogen atom or a substituent;
when R1 and R10 to R16 are substituents, the substituents are each selected from the group consisting of a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 ring carbon atoms, a substituted or unsubstituted heterocyclic group having 5 to 30 ring atoms, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted fluoroalkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 30 carbon atoms, a substituted silyl group, a substituted germanium group, a substituted phosphine oxide group, a fluorine atom, a cyano group, a nitro group, and a carboxy group;
a plurality of R1 are optionally mutually the same or different; and
when at least two of the plurality of R1 are substituents, the substituents R1 are optionally mutually bonded to form a cyclic structure,

in the formula (21):
Y21 to Y26 are each independently a nitrogen atom or a carbon atom bonded to another atom in the molecule of the second compound; and
at least one of Y21 to Y26 is a carbon atom bonded to another atom in the molecule of the second compound, and
in the formula (22):
Y31 to Y38 are each independently a nitrogen atom or a carbon atom bonded to another atom in the molecule of the second compound;
at least one of Y31 to Y38 is a carbon atom bonded to another atom in the molecule of the second compound; and
x2 is a nitrogen atom, an oxygen atom or a sulfur atom.

US Pat. No. 10,249,825

COMPOUND FOR ORGANIC ELECTRIC ELEMENT, ORGANIC ELECTRIC ELEMENT COMPRISING THE SAME AND ELECTRONIC DEVICE THEREOF

DUK SAN NEOLUX CO., LTD.,...

1. A compound represented by Formula 1 below:
wherein,
m is an integer from 1 to 4,
n is an integer from 1 to 3,
R1 and R2 are independently selected from the group consisting of hydrogen, deuterium, tritium, halogen, a C6-C60 aryl group, a fluorenyl group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C50 alkyl group, a C2-C20 alkenyl group, a C1-C30 alkoxy group, and a C6-C30 aryloxy group,
Ar1 is selected from the group consisting of a fluorenyl group, a C6-C60 aryl group, a C2-C20 alkenyl group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C50 alkyl group, -L2-N(Ar2)(Ar3), and a fused ring group of a C3-C60 aliphatic ring and a C6-C60 aromatic ring,
L1 and L2 are independently selected from the group consisting of a single bond, a C6-C60 arylene group, a fluorenylene group, a C2-C60 bivalent heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a bivalent fused ring group of a C3-C60 aliphatic ring and a C6-C60 aromatic ring, and a bivalent aliphatic hydrocarbon group,
Ar2 and Ar3 are independently selected from the group consisting of a C6-C60 aryl group, a fluorenyl group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C50 alkyl group, a fused ring group of a C3-C60 aliphatic ring and a C6-C60 aromatic ring, and a C2-C20 alkenyl group, and
the aryl group, heterocyclic group, fluorenyl group, alkyl group, alkenyl group, fused ring group, alkoxy group, aryloxy group, arylene group, fluorenylene group and aliphatic hydrocarbon group may be substituted by one or more substituents selected from the group consisting of deuterium, halogen, a silane group, a boron group, a germanium group, a cyano group, a nitro group, -L?-N(R?)(R?), a C1-C20 alkylthio group, a C1-C20 alkoxy group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C20 aryl group, a C6-C20 aryl group substituted by deuterium, a C2-C20 heterocyclic group, a C3-C20 cycloalkyl group, a C7-C20 arylalkyl group, and a C8-C20 arylalkenyl group, wherein L? is selected from the group consisting of a single bond, a C6-C60 arylene group, a fluorenylene group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P; a fused ring group of a C3-C60aliphatic ring and a C6-C60 aromatic ring, and a C2-C60 bivalent aliphatic hydrocarbon group, and R? and R? are independently from each other selected from the group consisting of a C6-C60 aryl group, a fluorenyl group, a C2-C60heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C20 alkyl group, and a C2-C20 alkenyl group,
with the proviso that: where Ar1 is a substituted C6-C60 aryl group, the substituent is selected from the group consisting of deuterium, halogen, a silane group, a boron group, a germanium group, a cyano group, a nitro group, -L?-N(R?)(R?), a C1-C20 alkylthio group, a C1-C20 alkoxy group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C14 aryl group, a C6-C20 aryl group substituted by deuterium, a C2-C20 heterocyclic group, a C3-C20 cycloalkyl group, a C7-C20 arylalkyl group, and a C8-C20 arylalkenyl group; and where R1 or R2 is a substituted C6-C60 aryl group, the substituent is selected from the group consisting of deuterium, halogen, a silane group, a boron group, a germanium group, a cyano group, a nitro group, a C1-C20 alkylthio group, a C1-C20 alkoxy group, a C1-C20 alkyl group, a C2-C20 alkenyl group, a C2-C20 alkynyl group, a C6-C20 aryl group, a C6-C20 aryl group substituted by deuterium, a C2-C20 heterocyclic group, a C3-C20 cycloalkyl group, a C7-C20 arylalkyl group, and a C8-C20 arylalkenyl group, and
with the proviso that:
where Ar1 is a C6-C60 aryl group, L1 is a single bond, and one of Ar2 and Ar3 is a C6-C60 aryl group or a fluorenyl group, the other of Ar2 and Ar3 is selected from the group consisting of:
wherein Q1 is C(Ra);wherein Q1 is C(Ra);wherein Q2 is C(Rb)(Rc), N(Rd), S, or O;
wherein Ra and Re are independently selected from the group consisting of hydrogen, deuterium, a C6-C60 aryl group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C50 alkyl group, a C2-C20 alkenyl group, a C1-C30 alkoxy group, and a fluorenyl group, or any two adjacent groups of Res can be optionally linked together to form at least one aromatic ring,
Rb to Rd are independently selected from the group consisting of a C6-C60 aryl group, a C2-C60 heterocyclic group containing at least one heteroatom selected from the group consisting of O, N, S, Si, and P, a C1-C50 alkyl group, a C2-C20 alkenyl group, and a C1-C30 alkoxy group, wherein Rb and Rc are optionally linked together to form at least one spiro compound.

US Pat. No. 10,249,824

CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE COMPRISING THE SAME

Samsung Display Co., Ltd....

1. A condensed-cyclic compound represented by Formula 1:
wherein:
X1 is N or C(R1), X2 is N or C(R2), X3 is N or C(R3), and X4 is N or C(R4), wherein at least one of X1 through X4 is N;
ring A is a substituted or unsubstituted naphthalene, a substituted or unsubstituted pyrimidine, a substituted or unsubstituted isoquinoline, a substituted or unsubstituted benzothiophene, a substituted or unsubstituted benzofuran, a substituted or unsubstituted dibenzothiophene, or a substituted or unsubstituted dibenzofuran;
each of R1 through R4, R11 and R12 is independently a hydrogen atom, a deuterium atom, a halogen atom, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C60 cycloalkyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C2-C60 heteroaryl group, —Si(R31)(R32)(R33), or —N(R34)(R35); and
each of R31 through R35 is independently a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C60 cycloalkyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, or a substituted or unsubstituted C2-C60 heteroaryl group; and
at least one of R11 or R12 is a substituted or unsubstituted C3-C60 cycloalkyl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C2-C60 heteroaryl group, a substituted or unsubstituted phenyl group, a substituted or unsubstituted pentalenyl group, a substituted or unsubstituted indenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted anthracenyl group, a substituted or unsubstituted azulenyl group, a substituted or unsubstituted heptalenyl group, a substituted or unsubstituted indacenyl group, a substituted or unsubstituted acenaphthyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted anthraquinolyl group, a substituted or unsubstituted fluorenyl group, a substituted or unsubstituted phenalenyl group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted anthryl group, a substituted or unsubstituted fluoranthenyl group, a substituted or unsubstituted pyrenyl group, a substituted or unsubstituted chrysenyl group, a substituted or unsubstituted naphthacenyl group, a substituted or unsubstituted picenyl group, a substituted or unsubstituted perylenyl group, a substituted or unsubstituted pentacenyl group, a substituted or unsubstituted tetraphenylenyl group, a hexaphenyl group, a substituted or unsubstituted rubicenyl group, a substituted or unsubstituted coronenyl group, a substituted or unsubstituted trinaphthylenyl group, a substituted or unsubstituted heptaphenyl group, a substituted or unsubstituted heptacenyl group, a substituted or unsubstituted pyranthrenyl group, a substituted or unsubstituted ovalenyl group, or a substituted or unsubstituted hexacenyl group.

US Pat. No. 10,249,823

FULLERENE DERIVATIVES AND PHOTOELECTRIC DEVICES AND IMAGE SENSORS

Samsung Electronics Co., ...

1. A compound, comprising:a fullerene derivative represented by Chemical Formula 1:

wherein, in Chemical Formula 1,
Ra is hydrogen or a C1 to C10 alkyl group,
R1 to R5 are independently one of
a substituted or unsubstituted C1 to C10 alkyl group, or
a substituted or unsubstituted C6 to C12 aryl group, and
at least one of R1 to R5 is
a C1 to C10 alkyl group substituted with at least one of a fluorine and a cyano group, or
a C6 to C12 aryl group substituted with at least one of a fluorine and a cyano group.

US Pat. No. 10,249,822

POLYMER BLENDS FOR A SEMICONDUCTING LAYER OF AN ORGANIC ELECTRONIC DEVICE

Cambridge Display Technol...

1. A polymer blend for a semiconducting layer of an organic electronic device, comprising: a first polymer; a second polymer which is different from the first polymer; and a semiconductor compound selected from the group of pentacene derivatives and thiophene derivatives, wherein the first polymer iswherein R1 and R2 are the same or different and each is independently selected from the group consisting of hydrogen and a linear, branched or cyclic alkyl group having from 1 to 16 carbon atoms, and wherein n is an integer of 30 or more.

US Pat. No. 10,249,820

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. A semiconductor device comprising:a plurality of first conductive patterns on a substrate, each of the plurality of first conductive patterns extending in a first direction parallel to a top surface of the substrate;
a first selection pattern on each of the plurality of first conductive patterns;
a first structure on the first selection pattern, the first structure including a first variable resistance pattern and a first heating electrode, and the first variable resistance pattern and the first heating electrode contacting each other to have a first contact area therebetween;
a plurality of second conductive patterns on the first structures, each of the plurality of second conductive patterns extending in a second direction parallel to the top surface of the substrate, the second direction crossing the first direction;
a second selection pattern on each of the plurality of second conductive patterns;
a second structure on the second selection pattern, the second structure including a second variable resistance pattern and a second heating electrode, the second variable resistance pattern and the second heating electrode contacting each other to have a second contact area therebetween, and the second contact area being different from the first contact area; and
a plurality of third conductive patterns on the second structures,
wherein the first contact area and the second contact area are separated by each of the plurality of second conductive patterns in a third direction perpendicular to the first and second directions.

US Pat. No. 10,249,819

METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING MULTI-PORTION LINERS

Micron Technology, Inc., ...

1. A method of forming a semiconductor structure, the method comprising:forming a protective portion of a liner on stack structures on a material, the protective portion comprising silicon carboxynitride and the stack structures comprising chalcogenide materials and carbon materials; and
forming a conformal portion of the liner on the protective portion of the liner, the conformal portion comprising silicon carboxynitride and the silicon carboxynitride of the protective portion comprising a lower amount of carbon than the silicon carboxynitride of the conformal portion.

US Pat. No. 10,249,818

MEMORY ELEMENT

Toshiba Memory Corporatio...

1. A memory element, comprising:a first layer, the first layer being conductive;
a second layer, the second layer being conductive; and
a third layer including hafnium oxide and being provided between the first layer and the second layer,
the first layer including
a first region including a first element and a first metallic element, the first element being selected from a group consisting of carbon and nitrogen,
a second region including a second metallic element and being provided between the first region and the third layer, and
a third region including titanium oxide and being provided between the second region and the third layer.

US Pat. No. 10,249,817

MAGNETIC DEVICE

Samsung Electronics Co., ...

1. A magnetic device, comprising:a free layer;
a pinned layer;
a tunnel barrier disposed between the free layer and the pinned layer;
a polarization enhancement layer disposed between the tunnel barrier and the pinned layer; and
a blocking layer disposed between the polarization enhancement layer and the pinned layer,
wherein the blocking layer comprises a transition metal and a magnetic material.

US Pat. No. 10,249,816

MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

SAMSUNG ELECTRONICS CO., ...

1. A magnetoresistive random access memory device, comprising:a memory structure on a substrate, the memory structure including a lower electrode, a magnetic tunnel junction structure, and an upper electrode sequentially stacked;
a first capping layer covering a surface of the memory structure, the first capping layer having a first nitrogen concentration;
a second capping layer on the first capping layer, the second capping layer having a second nitrogen concentration greater than the first nitrogen concentration;
an insulating interlayer on the second capping layer; and
a wiring through the insulating interlayer to be electrically connected to the upper electrode.

US Pat. No. 10,249,815

ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME INCLUDING VARIABLE RESISTANCE ELEMENT AND LOWER CONTACT PLUG WITH SIDEWALLS ALIGNED TO EACH OTHER

SK hynix Inc., Icheon-si...

1. An electronic device comprising a semiconductor memory, wherein the semiconductor memory comprises:a variable resistance element that exhibits different resistance states for storing data; and
a lower contact plug coupled to the variable resistance element and disposed under the variable resistance element, and
wherein the variable resistance element includes a lower electrode disposed over the lower contact plug to contact with the lower contact plug and an upper electrode disposed over the lower electrode,
wherein the semiconductor memory further includes an upper contact plug disposed over the upper electrode to contact with the upper electrode,
wherein sidewalls of the variable resistance element and the lower contact plug are aligned with each other,
wherein a sidewall of the upper electrode is not aligned with a sidewall of the upper contact plug, and
wherein widths of the lower contact plug, the lower electrode, the variable resistance element, and the upper electrode increase from a top surface of the upper electrode to a bottom surface of the lower contact plug.

US Pat. No. 10,249,814

DYNAMIC MEMORY PROTECTION

QUALCOMM Incorporated, S...

1. A method of protecting data in a memory in an electronic device, comprising:storing data in a first memory in the electronic device;
determining, via a magnetic sensor, a strength of an ambient magnetic field;
comparing the strength of the ambient magnetic field to a threshold;
transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and
transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.

US Pat. No. 10,249,813

METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATOR ELEMENT

SII CRYSTAL TECHNOLOGY IN...

1. A method of manufacturing a piezoelectric vibrator element using a wafer made of a piezoelectric material, the piezoelectric vibrator element including a piezoelectric plate, and a pair of excitation electrodes on the piezoelectric plate and adapted to vibrate the piezoelectric plate when a predetermined drive voltage is applied, the method comprising:providing the wafer with the piezoelectric plate and a frame part adapted to support the piezoelectric plate via a connection part;
providing the pair of excitation electrodes on the piezoelectric plate by patterning an electrode film on a principal surface and a side surface of the wafer, and forming a pair of extending electrodes extending from the piezoelectric plate to the frame part through the connection part to electrically connect to the pair of excitation electrodes; and
segmentallizing the piezoelectric plate by cutting the connection part,
wherein providing the pair of excitation electrodes includes forming at least one of the pair of extending electrodes on a side surface of the connection part.

US Pat. No. 10,249,812

FILTER AND MULTIPLEXER

TAIYO YUDEN CO., LTD., T...

1. A filter comprising:an input terminal;
an output terminal; and
a ladder circuit that includes one or more series acoustic wave resonators connected in series between the input terminal and the output terminal and one or more parallel acoustic wave resonators connected in parallel between the input terminal and the output terminal, and in which characteristic impedance of at least one point in a pathway between the input terminal and the output terminal at a center frequency of a passband is greater than input impedance of the input terminal and output impedance of the output terminal at the center frequency of the passband.

US Pat. No. 10,249,811

PIEZOELECTRIC DRIVING DEVICE, ROBOT, AND DRIVING METHOD OF THE SAME

Seiko Epson Corporation, ...

1. A piezoelectric driving device comprising:a first vibrating plate;
a first electrode that is provided on the first vibrating plate;
a piezoelectric member that is provided above the first vibrating plate;
a second electrode that is provided on the piezoelectric member;
a second vibrating plate that is provided above the first and second electrodes, the second vibrating plate having top and bottom surfaces opposite to each other, the bottom surface facing the first and second electrodes; and
a wiring pattern that is provided on the bottom surface of the second vibrating plate, the wiring pattern including a wiring member, the wiring member being located at a first area of the bottom surface,
wherein the first area correspond to the second electrode in a plan view, and
the wiring member of the wiring pattern is electrically connected to the second electrode.

US Pat. No. 10,249,810

STRUCTURALLY EMBEDDED AND INHOSPITABLE ENVIRONMENT SYSTEMS AND DEVICES HAVING AUTONOMOUS ELECTRICAL POWER SOURCES

1. An electrically-energized device, comprising:at least one of an electrically-energized sensor and an electrically-energized communication element;
an electrical power source configured to provide electrical energy to power the at least one of the electrically-energized sensor and the electrically-energized communication element, the electrical power source including one or more electrical power source components, at least one of the one or more electrical power source components comprising:
a first conductor formed of a first conductive material and having a first surface and a second surface, the first surface of the first conductor facing away from a build surface and being conditioned to have a first work function value,
a dielectric layer with a thickness in a range of 200 angstroms or less formed over the conditioned first surface of the first conductor, and
a second conductor formed of a second conductive material and having a first surface with a second work function value, and having a second surface, and being arranged over the dielectric layer such that the first surface of the second conductor faces the dielectric layer,
the first conductor, the dielectric layer and the second conductor forming a layered structure of the electrical power source component;
a first electrical lead and a second electrical lead electrically connecting the at least one of the electrically-energized sensor and the electrically-energized communication element with the electrical power source,
the first work function value and the second work function value being in a range of 5.0 electron volts (eV) or less, and
the first work function value being at least 1.0 eV less than the second work function value.

US Pat. No. 10,249,809

ELECTRIC POWER GENERATION

1. A system comprising: a feed water pump; a line linking the feed water pump to a boiler, the boiler heating cold fluid from the feed water pump to produce hot fluid; a line linking the boiler to a turbine and a feed water reheater, the line providing a first portion of the hot fluid from the boiler to the turbine and a second portion of the hot fluid from the boiler to the feed water reheater; and a first generator unit for receiving hot fluid only from the feed water reheater and condensate from a condenser, the first generator unit generating electric power from a difference between a temperature of the hot fluid from the feed water reheater and the temperature of the condensate from the condenser.

US Pat. No. 10,249,808

SURFACE DOPING OF NANOSTRUCTURES

The Regents of the Univer...

1. A material comprising:a plurality of tellurium nanowires, the plurality of tellurium nanowires comprising a p-type semiconductor, the plurality of tellurium nanowires consisting essentially of tellurium; and
S2? or SH? species disposed on surfaces of each of the plurality of tellurium nanowires, charge carriers comprising electrons being transferred between the S2? or SH? species and the plurality of tellurium nanowires, the S2? or SH? species shifting the Fermi level of each the plurality of tellurium nanowires towards the conduction band, and the S2? or SH? species changing the plurality of tellurium nanowires to an n-type semiconductor.

US Pat. No. 10,249,807

PRE-ROTATED OVERMOULDED BIDIRECTIONAL SPREADING LENS FOR STRETCHED LEADFRAME ARCHITECTURE

Lumileds LLC, San Jose, ...

1. A solid state light-emitting device (LED) lighting apparatus, comprising:a stretched leadframe assembly, comprising:
leadframes spaced apart at a pitch, each leadframe comprising at least one pad;
interconnects each linking two adjacent leadframes;
LEDs mounted on the leadframes; and
bidirectional spreading lenses disposed about the LEDs, each bidirectional spreading lens having a spreading axis and a null axis perpendicular to the spreading axis, each bidirectional spreading lens directing more light in opposite directions along the spreading axis than the null axis,
the spreading axis being aligned along the length of the stretched leadframe assembly.

US Pat. No. 10,249,806

SOLID STATE OPTOELECTRONIC DEVICE WITH PREFORMED METAL SUPPORT SUBSTRATE

Micron Technology, Inc., ...

1. A method of manufacturing a plurality of solid state lighting (“SSL”) devices, the method comprising:providing a light emitting structure having a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials;
forming a metal bonding structure on the light emitting structure; and
bonding a preformed metal substrate to the metal bonding structure, wherein the light emitting structure extends continuously over a surface of the preformed metal substrate.

US Pat. No. 10,249,805

LIGHT EMITTING DIODE PACKAGE HAVING FRAME WITH BOTTOM SURFACE HAVING TWO SURFACES DIFFERENT IN HEIGHT

LG INNOTEK CO., LTD., Se...

1. A light emitting diode package, comprising:a substrate;
a light emitting diode on the substrate;
an electrode electrically connected to the light emitting diode;
a frame surrounding the light emitting diode and configured to reflect light emitted from the light emitting diode; and
at least one hole passing through the substrate and configured to connect both upper and bottom surfaces of the substrate,
wherein a top surface of the frame is positioned higher than a top surface of the light emitting diode,
wherein a portion of the frame has an inclined inner surface,
wherein the frame includes at least one protruding portion protruding from an imaginary surface where the light emitting diode is disposed,
wherein a bottom surface of the at least one protruding portion contacts the substrate,
wherein the at least one protruding portion is located at a portion outside of the light emitting diode, and
wherein the at least one hole is vertically overlapped with the light emitting diode.

US Pat. No. 10,249,804

SEMICONDUCTOR DEVICE, BASE, AND METHOD FOR MANUFACTURING SAME

NICHIA CORPORATION, Anan...

1. A semiconductor device comprising:a base comprising:
a base member,
a reflective film located above the base member, the reflective film containing silver as a major component and containing particles formed of at least one material selected from the group consisting of an oxide, a nitride, and a carbide, and
a distributed Bragg reflector film, a portion of which contacts an upper surface of the reflective film; and
a semiconductor element disposed on the base.

US Pat. No. 10,249,803

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE

Industrial Technology Res...

1. A light-emitting device comprising:a transparent substrate having a first surface and a second surface opposite to the first surface and having a first through hole penetrating the first surface and the second surface;
a light-emitting structure disposed on the first surface of the transparent substrate, and the light-emitting structure having at least a second through hole corresponding to the first through hole, wherein the light-emitting structure comprises a cathode layer, an anode layer, and a light-emitting layer disposed between the cathode layer and the anode layer;
a sealing layer disposed on the transparent substrate and covering the light-emitting structure, and the sealing layer having a third through hole corresponding to the first through hole;
a carrier board attached to the transparent substrate, and the sealing layer disposed between the carrier board and the transparent substrate, wherein the carrier board has a fourth through hole corresponding to the first through hole, wherein the inner wall of the first, third and fourth through holes is continuous having a same cross section view from the top; and
a positive electrode and a negative electrode electrically connected to the anode layer and the cathode layer respectively, and at least one of the positive electrode and the negative electrode disposed on the second surface of the transparent substrate.

US Pat. No. 10,249,802

LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME

NICHIA CORPORATION, Anan...

15. A light emitting device comprising:a light emitting element having:
a first face,
a second face opposing the first face,
a plurality of lateral faces extending between the first face and the second face, the plurality of lateral faces including a first lateral face and a second lateral face adjacent to the first lateral face, and
a plurality of corners, each located where the second face meets two respective ones of the plurality of lateral faces, the plurality of corners including a first corner located where the second face meets the first lateral face and the second lateral face,
wherein the light emitting element comprises a pair of electrodes at a second face side of the light emitting element;
a light transmissive member covering a portion of the first lateral face and a portion of an edge where the first lateral face meets the second face, such that the first corner and a portion of an edge where the first lateral face meets the second lateral face are exposed from the light transmissive member; and
a covering member covering the first corner of the light emitting element, the portion of the edge where the first lateral face meets the second lateral face, and an exterior of the light transmissive member, such that the pair of electrodes are exposed from the covering member;
wherein a thermal expansion coefficient of the covering member is lower than a thermal expansion coefficient of the light transmissive member.

US Pat. No. 10,249,801

LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF

Seoul Semiconductor Co., ...

1. A light-emitting diode package, comprising:a light-emitting diode chip disposed in a housing;
a first phosphor configured to emit green light having a full width at half maximum (FWHM) less than or equal to about 35 nm; and
a second phosphor configured to emit red light,
wherein:
white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor, and the second phosphor, and
the second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb,Ce, and NH4, and M is one of Si, Ti, Nb, and Ta.

US Pat. No. 10,249,800

STACKED TRANSPARENT PIXEL STRUCTURES FOR ELECTRONIC DISPLAYS

Lockheed Martin Corporati...

1. A system comprising:a substrate;
a plurality of hexagon-shaped pixels coupled to the substrate, each hexagon-shaped pixel comprising:
a first subpixel formed on the substrate;
a second subpixel stacked on top of the first subpixel; and
a third subpixel stacked on top of the second subpixel; and
a plurality of connector columns that electrically couple the first, second, and third subpixels to the substrate;
wherein:
each of the first, second, and third subpixels comprises an emissive layer located between a transparent cathode layer and a transparent anode layer; and
each transparent cathode layer and transparent anode layer of each subpixel is electrically coupled to the substrate through a respective one of the plurality of connector columns.

US Pat. No. 10,249,799

METHOD FOR PRODUCING LIGHT-EMITTING DEVICE

TOYODA GOSEI CO., LTD., ...

1. A method for producing a Group III nitride semiconductor light-emitting device having a reflective electrode on a p-type layer, the method comprising:forming a light transmitting film made of a transparent material having a refractive index different from a refractive index of the p-type layer on a region for forming a reflective electrode layer on the p-type layer;
forming a resist layer with an opening on the p-type layer and the light transmitting film, and exposing the surface of the light transmitting film in the bottom of the opening;
removing the center of the light transmitting film by wet etching, and leaving the ends of the light transmitting film to form a ring-shaped light transmitting film;
forming a reflective film containing Ag or Ag alloy on the p-type layer and the resist layer;
forming the reflective electrode by removing the resist layer along with the reflective film on the resist layer to leave the reflective film on the p-type layer; and
forming a cover metal layer on the reflective electrode and the ring-shaped light transmitting film,
wherein the ring-shaped light transmitting film is a ring-shaped transparent electrode.

US Pat. No. 10,249,798

LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a first electrode electrically connected to the first conductive type semiconductor layer;
a second electrode disposed on and electrically connected to the second conductive type semiconductor layer;
a support structure comprising a first bulk electrode disposed on and electrically connected to the first electrode, and a second bulk electrode disposed on and electrically connected to the second electrode, and wherein the first bulk electrode and the second bulk electrode are separated from each other with an insulation support layer disposed between the first bulk electrode and the second bulk electrode; and
a substrate disposed adjacent to the support structure,
wherein each of the first and second bulk electrodes comprises an upper region and a lower region, with the upper regions of the first and second bulk electrodes being separated from each other by a first distance,
wherein the substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance greater than the first distance,
wherein the first bulk electrode comprises a first plane facing the second bulk electrode and a second plane disposed opposite the first plane,
wherein the second bulk electrode comprises a third plane facing the first bulk electrode and a fourth plane disposed opposite the third plane,
wherein the first bulk electrode comprises a first depression inset from a lower most edge of the first plane and defining a lower most edge of the first bulk electrode,
wherein the second bulk electrode comprises a second depression inset from a lower most edge of the third plane and defining a lower most edge of the second bulk electrode, and
wherein the insulation support layer is disposed between the lower most edge of the first bulk electrode and the lower most edge of the second bulk electrode such that the insulation support layer extends along the entirety of the lower most edge of the first bulk electrode and the entirety of the lower most edge of the second bulk electrode.

US Pat. No. 10,249,797

HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:a substrate;
a semiconductor stack disposed on the substrate, the semiconductor stack comprising:
a p-type semiconductor layer;
an active layer; and
an n-type semiconductor layer, the n-type comprising a roughened surface and a protrusion region having a flat surface facing away from the substrate in a vertical direction;
a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack;
a first electrode pad disposed on the semiconductor stack;
an electrode extension extending from the first electrode pad, the electrode extension comprising a contact region that directly contacts the n-type semiconductor layer;
the electrode extension disposed on the flat surface of the n-type semiconductor layer wherein the flat surface is surrounded by the roughened surface;
a width of electrode extension is narrower than a width of the flat surface;
a first insulating layer interposed between the substrate and the semiconductor stack, the first insulating layer covering a first region of the p-type semiconductor layer under the contact region of the electrode extension; and
a second insulating layer interposed between the first electrode pad and the semiconductor stack in a direction perpendicular to the top surface of the substrate, such that the second insulating layer prevents the first electrode pad from directly contacting the semiconductor stack and overlaps at least a part of the roughened surface of the n-type semiconductor layer in the vertical direction,
wherein the first insulating layer comprises at least one groove exposing the semiconductor stack, wherein the first metal layer is interposed between the first insulating layer and the substrate, and is ohmic-contacted with the semiconductor stack by filling the at least one groove,
wherein the at least one groove does not overlap with the electrode extension,
wherein the second insulating layer comprises a first distal end extending away from the semiconductor stack and directly contacting the first insulating layer and is disposed directly on the roughened surface of peripheral of the n-type semiconductor layer in the vertical direction and a side of the semiconductor stack, and
wherein the second insulating layer comprising at least one opening exposing the n-type semiconductor layer overlapping the contact region of the electrode extension, through which the contact region of the electrode extension is directly contacts the n-type semiconductor layer.

US Pat. No. 10,249,796

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THEREOF

BOE TECHNOLOGY GROUP CO.,...

1. A light emitting diode, comprising:a base substrate; and
a first semiconductor layer on the base substrate;
a quantum well active layer on a side of the first semiconductor layer distal to the base substrate;
a second semiconductor layer on a side of the quantum well active layer distal to the first semiconductor layer;
a first electrode connected to the first semiconductor layer;
a second electrode connected to the second semiconductor layer; and
a transparent protective layer on a side of the second semiconductor layer distal to the base substrate;
wherein at least the second semiconductor layer is an uneven layer comprising a plurality of ridges adapted to concentrate light emitting from the light emitting layer;
the transparent protective layer is on a side of each of the plurality of ridges distal to the base substrate; and
the first semiconductor layer and the second semiconductor layer are two different layers selected from an N-type doped layer and a P-type doped layer;
wherein the light emitting diode comprises a notch extending through a portion of the second semiconductor layer and a portion of the quantum well active layer to expose a portion of a top surface of the first semiconductor layer;
the notch is adjacent to peripheries of the second semiconductor layer and the quantum well active layer; and
the first electrode extends through the notch to be in direct contact with the portion of the top surface of the first semiconductor layer.

US Pat. No. 10,249,795

LED CHIP WITH INTEGRATED ELECTROMECHANICAL SWITCH

Koninklijke Philips N.V.,...

2. An LED chip, comprising:a semiconductor substrate;
first and second external terminals;
an LED structure connected between the first and second external terminals, the LED structure comprising a first semiconductor layer and a second semiconductor layer over the first semiconductor layer, each layer having a top surface and a bottom surface;
a suspended beam electrostatic switch connected in series with the LED structure between the first and second external terminals, or in parallel with the LED structure;
a third external terminal;
a control electrode connected to the third external terminal for controlling the suspended beam electrostatic switch,
the first semiconductor layer comprising two electrically isolated sub-portions isolated by a dividing channel in the first semiconductor layer and physically connected at their bottom surfaces by the semiconductor substrate,
the second semiconductor layer partially covering the top surface of the first semiconductor layer,
an internal terminal being connected to an anode or cathode of the LED structure and disposed on the top surface of one sub-portion of the first semiconductor layer, and
the second external terminal being disposed on the top surface of the other sub-portion of the first semiconductor layer, and the control electrode being disposed on a surface within the dividing channel,
wherein the suspended beam electrostatic switch comprises a suspended clamp electrode suspended above the dividing channel, being physically connected to, and electrically isolated from, a floating bridge electrode, the bridge electrode having a first end suspended above the internal terminal and a second end suspended above the second external terminal, and both electrodes hinge from a secondary support structure positioned adjacent to the lower semiconductor layer, spanning across the dividing channel.

US Pat. No. 10,249,794

DIODE WITH AN IMPROVED ELECTRIC CURRENT INJECTION

1. A diode, comprising:a first semiconductor region having a first conductivity type;
a first electrode configured to bias the first semiconductor region, wherein the first electrode comprises, in a top view, a plurality of conductive elements, including:
a polygonal ring having a center, a plurality of vertices and a plurality of sides;
wherein each vertex of the plurality of vertices comprises:
a first rectilinear bar extending between the vertex and the center of the polygonal ring, substantially along a direction running from the vertex to the center of the polygonal ring;
wherein the first rectilinear bar comprises a plurality of second rectilinear bars extending from the first rectilinear bar substantially parallel to the plurality of sides of the polygonal ring; and
wherein the vertex forms an origin of the first rectilinear bar;
a second semiconductor region formed in a vertical stack with and having a second conductivity type different from the first conductivity type;
wherein the first electrode is arranged in a trench extending from a surface of the second semiconductor region opposite to the first semiconductor region; and
wherein the dimensions of the first and second rectilinear bars of each of the plurality of vertices of the polygonal ring are such that a volume of the second semiconductor region located, in top view, within the polygonal ring, is continuous.

US Pat. No. 10,249,793

TRANSPARENT ELECTRON BLOCKING HOLE TRANSPORTING LAYER

Palo Alto Research Center...

1. A light emitting diode, comprising:an active region configured to emit light;
a composite electrical contact layer comprising:
an array of padlets with gaps between the padlets, the padlets comprising:
a first sub-layer comprising a III-nitride material; and
a second sub-layer comprising a material different from the first sub-layer, wherein the material of the second sub-layer comprises a conducting oxide; and
a reflective sub-layer disposed in the gaps and over the padlets, the reflective sub-layer configured to reflect the light emitted by the active region; and
a transparent electron blocking hole transporting layer (TEBHTL) arranged between the composite electrical contact layer and the active region and having a thickness that extends at least a majority of a distance between the active region and the electrical contact layer, the TEBHTL having a band-gap greater than a band-gap of light emitting portions of the active region, the band-gap of the TEBHTL decreasing as a function of distance from the active region to the composite electrical contact layer over a majority of the thickness of the TEBHTL.

US Pat. No. 10,249,792

PROTECTIVE CAPPING LAYER FOR SPALLED GALLIUM NITRIDE

INTERNATIONAL BUSINESS MA...

1. A method of producing a semiconductor device comprising:forming a stack including a semiconductor material comprising:
a Group III nitride semiconductor material formed on a growth substrate,
a protective layer formed over the Group III nitride semiconductor material, and
a handle layer and a stressor layer formed over the protective layer; and
spalling the stack to separate the growth substrate from the stack.

US Pat. No. 10,249,791

HIGH-BRIGHTNESS LIGHT-EMITTING DIODE WITH SURFACE MICROSTRUCTURES

XIAMEN SANAN OPTOELECTRON...


(3) dipping the epitaxial wafer processed by Step (1) in the roughening solution prepared by Step (2) for 1-8 min;
wherein for the resulting LED:
the light-emitting surface has a surface microstructure; and
a ratio of total roughened surface area of the light-emitting surface to a vertically-projected area is not less 1.5.

US Pat. No. 10,249,790

LIGHT EMITTING DIODE AND FABRICATION METHOD THEROF

XIAMEN SANAN OPTOELECTRON...

1. A light emitting diode comprising:a first semiconductor layer;
an active layer; and
a second semiconductor layer,
wherein:
an upper surface of the first semiconductor layer has at least a first growth region and a second growth region;
the active layer is formed in the first growth region but not in the second growth region via selective epitaxial growth;
the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer via epitaxial growth;
when current is injected in the active layer, part of light is emitted from the active layer, and then emitted out from the second growth region after reflection;
the upper surface of the first semiconductor layer has the first growth region, the second growth region, and a third growth region;
the first and the third growth regions are separated by the second growth region;
the active layer is formed only in the first growth region and the third growth region via epitaxial growth;
the active layer in the third growth region and the active layer in the first growth region form an alternating active layer by having a height difference in the third growth region and the first growth region, thereby reducing secondary absorption during light reflection while maintaining a light emitting area; and
the second semiconductor layer covers the active layer and the second growth region of the first semiconductor layer.

US Pat. No. 10,249,789

LIGHT EMITTING DIODE CHIP AND FABRICATION METHOD

XIAMEN SANAN OPTOELECTRON...

1. A method of fabricating a light-emitting diode (LED) chip, the method comprising:(1) providing a substrate;
(2) fabricating an epitaxial layer over the substrate, wherein the epitaxial layer comprises, from bottom up:
at least a first type of a semiconductor layer;
a light-emitting layer; and a second type of semiconductor layer with a plurality of recess portions and protrusion portions;
(3) forming a light transmission layer over the epitaxial layer between top ends of adjacent protrusion portions and forming holes with the recess portions, wherein a horizontal size of the light transmission layer is larger than a width between two adjacent protrusion portions;
(4) covering a top surface of the light transmission layer and a top surface of the epitaxial layer not masked by the light transmission layer with a current spreading layer with a thin-film structure in a continuous distribution; and
(5) fabricating a first electrode and a second electrode respectively arranged over a portion of the current spreading layer and below the substrate.

US Pat. No. 10,249,788

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE

ENKRIS SEMICONDUCTOR, INC...

1. A semiconductor substrate, comprising a first semiconductor layer and a second semiconductor layer located on the first semiconductor layer; whereinthe first semiconductor layer and the second semiconductor layer have different cleavage planes in a vertical direction; or
a semiconductor layer obtained by symmetrically rotating the first semiconductor layer according to a lattice structure of the first semiconductor layer has a different cleavage plane in the vertical direction as that of the second semiconductor layer; or
a semiconductor layer obtained by symmetrically rotating the second semiconductor layer according to a lattice structure of the second semiconductor layer has a different cleavage plane in the vertical direction as that of the first semiconductor layer; or
the semiconductor layer obtained by symmetrically rotating the first semiconductor layer according to the lattice structure of the first semiconductor layer and the semiconductor layer obtained by symmetrically rotating the second semiconductor layer according to the lattice structure of the second semiconductor layer have different cleavage planes in the vertical direction;
wherein the first semiconductor layer and the second semiconductor layer have different lattice structures, and non-coincident crystallographic directions in a horizontal direction, the first semiconductor layer and the second semiconductor layer are laminated sequentially and alternately to form a laminated structure having three or more layers, and the laminated structure comprises a dielectric layer between the first semiconductor layer and the second semiconductor layer and a third semiconductor layer having a same lattice structure with the first semiconductor layer, wherein the third semiconductor layer and the first semiconductor layer have same cleavage planes in the vertical direction and the second semiconductor layer is located between the first semiconductor layer and the third semiconductor layer.

US Pat. No. 10,249,787

COMPONENT HAVING A MULTIPLE QUANTUM WELL STRUCTURE

OSRAM OPTO SEMICONDUCTORS...

1. A component having a semiconductor layer sequence comprising a p-conductive semiconductor layer, an n-conductive semiconductor layer and an active zone arranged between the p-conductive semiconductor layer and the n-conductive semiconductor layer, whereinthe active zone comprises a multiple quantum well structure, which, from the p-conductive semiconductor layer towards the n-conductive semiconductor layer, comprises a plurality of p-side barrier layers with intermediate quantum well layers and a plurality of n-side barrier layers with intermediate quantum layers,
in the semiconductor layer sequence on the side of the p-conductive semiconductor layer, recesses are formed which have sidewalls, wherein the quantum well layers and/or the plurality of n- and p-side barrier layers extend at least in places conformally with the sidewalls of the recesses,
the plurality of the n- and p-side barrier layers have layer thicknesses that increase monotonically from the p-conductive semiconductor layer towards the n-conductive semiconductor layer, such that the active zone has a gradient with increasing layer thickness of the barrier layers towards the n-conductive semiconductor layer, and
the n-side barrier layers have a greater average layer thickness than the p-side barrier layers.

US Pat. No. 10,249,786

THIN FILM AND SUBSTRATE-REMOVED GROUP III-NITRIDE BASED DEVICES AND METHOD

PALO ALTO RESEARCH CENTER...

1. A method of thinning a bulk aluminum nitride substrate, comprising:providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate;
applying a slurry having a high pH to a second side of the substrate opposite the first side;
chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns; and
bonding the epitaxial layer to a non-native substrate.

US Pat. No. 10,249,785

REDUCING DARK CURRENT IN GERMANIUM PHOTODIODES BY ELECTRICAL OVER-STRESS

International Business Ma...

1. A method for reducing dark current in a photodiode, comprising:heating a photodiode above room temperature;
measuring the dark current generated by the photodiode; and
applying a reverse bias voltage to the heated photodiode to reduce a dark current generated by the photodiode, increasing the reverse bias voltage until the measured dark current stabilizes to maximize a stable dark current reduction after the photodiode returns to room temperature.

US Pat. No. 10,249,784

OPTICAL SENSOR CAPABLE OF BEING APPLIED TO A TILT SENSOR

HAMAMATSU PHOTONICS K.K.,...

1. An optical sensor comprising:a light emitting element;
a lower substrate on which the light emitting element is provided;
an upper substrate provided so that the light emitting element is positioned between the upper substrate and the lower substrate; and
an optical block provided on the upper substrate,
wherein the upper substrate includes a position detection type light detecting element, and
wherein the optical block is configured to reflect light emitted from the light emitting element toward a measurement target, and light reflected by the measurement target is incident onto the position detection type light detecting element,
wherein the upper substrate includes
a semiconductor substrate main body of a first conductivity type having an impurity concentration of 1×1018 /cm3 or greater;
a first semiconductor region of the first conductivity type formed on a front surface of the semiconductor substrate main body and having an impurity concentration of less than 1×1018 /cm3; and
a single or a plurality of second semiconductor regions of a second conductivity type formed in the first semiconductor region, and
wherein the position detection type light detecting element includes the first semiconductor region and the second semiconductor region.

US Pat. No. 10,249,783

HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER

International Business Ma...

1. A method of forming an electrical device is comprising:growing an LED junction on a supporting substrate;
forming an zinc oxide interface layer on the LED junction;
forming a photovoltaic device junction on the zinc oxide interface layer by molecular beam epitaxial growth, wherein the zinc oxide interface layer entirely physically separates the LED junction from the photovoltaic device junction, the zinc oxide interface layer extending an entire width of the photovoltaic device junction; and
forming contacts to the LED junction and the photovoltaic device junction, wherein the semiconductor material layers in the photovoltaic device junction that is at a light receiving end of the electrical device have a wider band gap than the LED junction that is not at the light receiving end of the electrical device.

US Pat. No. 10,249,782

HIGH VOLTAGE PHOTOVOLTAICS INTEGRATED WITH LIGHT EMITTING DIODE CONTAINING ZINC OXIDE CONTAINING LAYER

International Business Ma...

1. An electrical device comprising:a material stack present on a supporting substrate;
an LED at a first end of the material stack having a first set of bandgap materials;
a photovoltaic device at a second end of the material stack having a second set of bandgap materials, the second end of the material stack being a light receiving end, wherein a width of the bandgap material for the second set of bandgap material is greater than a width of a bandgap material for the first set of bandgap materials; and
a zinc oxide interface layer between the LED and the photovoltaic device, wherein the zinc oxide interface layer is a layer within the material stack that entirely physically separates the LED from the photovoltaic device, the zinc oxide interface layer extending an entire width of the photovoltaic device.

US Pat. No. 10,249,781

APPARATUS FOR COUNTING SINGLE PHOTONS AND METHOD THEREOF

1. An apparatus for counting single photons, comprising:an edge combiner configured to detect an edge of each of applied clocks using a plurality of Phase-Locked Loops (PLL) to generate a combined signal;
a sampling unit configured to sample all events occurring in each SPAD of a single photon detection diode (SPAD) array using an OR tree and an XOR tree; and
a calculation unit configured to count the sampled events based on the combined signal to count single photons.

US Pat. No. 10,249,780

HIGH QUALITY ALSB FOR RADIATION DETECTION

STC.UNM, Albuquerque, NM...

1. A radiation detector, comprising:a substrate comprising Si; anda thin film disposed over the substrate, wherein the thin film comprises UHV-MBE grown AlSb and a background carrier concentration of less than 1015 cm?3.

US Pat. No. 10,249,779

SOLAR COLLECTOR

Violeta Doci, Hamburg (D...

1. A light collector (10) having an optical unit (20) and an energy conversion unit, whereby the energy conversion unit comprises a number of conversion cells (12, 14, 16) that are located along a first main axis, in which the optical unit (20) triggers a light refraction and encloses the energy conversion unit by at least 180 degrees, and the optical unit (20) focuses parallel incident light on a focal area,wherein the focal area has its largest dimension along a second main axis, and the second main axis extends along the first main axis, the optical unit (20) comprises a light-transmitting dish and a fill medium, and the optical unit (20) has a variable index of refraction along the first main axis for the refraction of light, the conversion cells comprising a first conversion cell (12) at a distance from a second conversion cell (14), the first conversion cell (12) being dedicated to a first fill medium and the second conversion cell (14) being dedicated to a fill medium (42) that is different from the first fill medium (40), the dish having an upper part (22) and an underneath part (24), the energy conversion unit being located within the upper part (22) of the dish, the optical unit (20) being supported by a carrier element (26) below the underneath part (24) of the dish, the conversion cells (12,14,16) generating electric current and being connected together and spaced apart by spacers (18), and the spacers (18) being electrically conductive.

US Pat. No. 10,249,778

SOLAR CELL STRUCTURE FOR WIRELESS CHARGING

Industrial Technology Res...

1. A solar cell structure for wireless charging, comprising:a plane substrate; and
at least one thin film solar cell, disposed on a first surface of the plane substrate, wherein the at least one thin film solar cell has a first winding coil structure with two ends and having a central axis, the at least one thin film solar cell comprises:
a back electrode, formed on the plane substrate;
a light absorption layer, formed on the back electrode; and
a transparent electrode layer, formed on the light absorption layer, wherein the back electrode, the light absorption layer, and the transparent electrode layer are the first winding coil structure, and the central axis of the first winding coil structure is perpendicular to the first surface of the plane substrate.

US Pat. No. 10,249,777

INFRARED LIGHT EMITTING DIODE

1. An infrared light-emitting diode, comprising: a first cladding layer; an active layer; and a second cladding layer; wherein: the first cladding layer is InxGa1-xAs, where, In component is 0?X?5%, and a difference of lattice match between layers ?0 is <3,800 ppm, and the light-emitting peak wavelength of the active layer is above 930 nm.

US Pat. No. 10,249,776

HETEROJUNCTION SOLAR CELL AND MANUFACTURING METHOD THEREOF

LG ELECTRONICS INC., Seo...

1. A method for manufacturing a heterojunction solar cell, the method comprising:Forming a tunnel layer on a semiconductor substrate;
forming a metal compound on the tunnel layer;
forming a transparent conductive oxide on the metal compound;
forming an electrode forming material on the transparent conductive oxide;
sintering the electrode forming material using light sintering to form an electrode part,
wherein the transparent conductive oxide is also sintered by the light sintering to form a transparent conductive oxide layer formed of the transparent conductive oxide,
wherein the transparent conductive oxide layer and the electrode part are simultaneously formed by light sintering the transparent conductive oxide when light sintering the electrode forming material, and
wherein a metal compound layer formed of the metal compound, the transparent conductive oxide layer, and the electrode part are simultaneously formed by light sintering the metal compound when light sintering the transparent conductive oxide and the electrode forming material.

US Pat. No. 10,249,775

SOLAR CELL AND METHOD FOR PRODUCING SOLAR CELL

SHIN-ETSU CHEMICAL CO., L...

1. A solar cell comprising:a semiconductor substrate of a first conductivity type having a first conductivity type diffusion layer and a second conductivity type diffusion layer which are formed on a backside of a light-receiving surface of the semiconductor substrate,
a first electrode portion joined to the first conductivity type diffusion layer, and a second electrode portion joined to the second conductivity type diffusion layer,
a first electrode line portion formed on the first electrode portion,
a second electrode line portion formed on the second electrode portion,
a first electrode bus bar portion connected with the first electrode line portion,
a second electrode bus bar portion connected with the second electrode line portion,
an intersection region of the second electrode portion and the first electrode bus bar portion,
an intersection region of the first electrode portion and the second electrode bus bar portion,
a first insulator film which is formed so as to cover a side portion and a top of the second electrode portion at least in the intersection region of the second electrode portion and the first electrode bus bar portion, and
a second insulator film which is formed so as to cover a side portion and a top of the first electrode portion at least in the intersection region of the first electrode portion and the second electrode bus bar portion,
wherein
the second electrode portion is formed continuously in a line shape under the first insulator film,
the first electrode portion is formed continuously in a line shape under the second insulator film,
the first electrode line portion is provided on the first electrode portion except at an intersection region of the first electrode portion and the first electrode bus bar portion,
the second electrode line portion is provided on the second electrode portion except at an intersection region of the second electrode portion and the second electrode bus bar portion, and
the first electrode portion and the first electrode line portion constitute a first finger electrode, and the second electrode portion and the second electrode line portion constitute a second finger electrode.

US Pat. No. 10,249,773

LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

XIAMEN SANAN OPTOELECTRON...

1. A fabrication method of a light-emitting diode, comprising:1) providing a light-emitting epitaxial laminated layer having an upper surface and an opposing lower surface, including a first semiconductor layer, a second semiconductor layer and an active therebetween;
2) fabricating a dielectric layer having a conductive through-hole array comprising a plurality of uniformly-distributed conductive through-holes over the lower surface of the light-emitting epitaxial laminated layer;
3) fabricating a metal conductive layer over a lower surface of the dielectric layer and filling up the plurality of uniformly-distributed conductive through-holes, forming ohmic-contact with the light-emitting epitaxial laminated layer;
4) providing a conductive substrate and connecting the conductive substrate to the metal conductive layer for supporting the light-emitting epitaxial laminated layer; and
5) forming a first electrode comprising a bonding pad electrode and a finger-shaped electrode over the upper surface of the light-emitting epitaxial laminated layer, wherein, a rotation angle is formed between the finger-shaped electrode and the conductive through-hole array formed in step 2), wherein the rotation angle is selected to prevent a preferred number of conductive through-holes from being shielded by the bonding pad electrode and the finger-shape electrode.

US Pat. No. 10,249,772

SOLAR CELL

Industrial Technology Res...

1. A solar cell, comprising:a first electrode;
a second electrode;
a photoelectric conversion layer, disposed between the first electrode and the second electrode; and
a first electrical modulating stack layer, disposed on the first electrode, wherein the first electrical modulating stack layer includes at least one positively charged layer and at least one negatively charged layer stacked alternately, and the first electrode is disposed between the first electrical modulating stack layer and the photoelectric conversion layer,
wherein the positively charged layer and the negatively charged layer of the first electrical modulating stack layer are separately deposited layers.

US Pat. No. 10,249,771

FILTER COLLIMATORS AND METHODS FOR FORMING THE SAME

Visera Technologies Compa...

1. A filter collimator, comprising:a substrate having a photodiode;
a first light-shielding layer disposed over the substrate, having an aperture corresponding to the photodiode;
an interference-type filter film disposed between the substrate and the first light-shielding layer; and
an absorption-type filter film disposed over the substrate;
wherein when a first light is incident at a first angle relative to a normal of a top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a first waveband, and when a second light is incident at a second angle relative to the normal of the top surface of the substrate, the interference-type filter film has a transmittance greater than 50% in a second waveband, the absorption-type filter film has a transmittance greater than 50% in a third waveband, and wherein the first waveband partially overlaps the third waveband, the second waveband does not overlap the third waveband, and the second angle is greater than the first angle.

US Pat. No. 10,249,770

SOLAR CELL MODULE

LG INNOTEK CO., LTD., Se...

1. A solar cell module comprising:a support substrate;
a back electrode layer on the support substrate;
a light absorbing layer on the back electrode layer;
a front electrode layer on the light absorbing layer; and
a bus bar,
wherein the back electrode layer is configured to be formed with a groove upon which a portion of the bus bar is disposed, the groove being formed by a top surface of the back electrode layer on the support substrate, and first at second lateral surfaces of the back electrode layer, wherein the bus bar is in contact with a top surface and the first lateral surface of the back electrode layer, and the second lateral surface of the back electrode layer is exposed by the groove; and
wherein top surface includes molybdenum diselenide (MoSe2), and the first and second lateral surfaces each includes molybdenum (Mo) and molybdenum diselenide.

US Pat. No. 10,249,769

ON-CHIP TUNEABLE DIFFUSION RESISTOR

Dialog Semiconductor, Inc...

1. An on-chip tuneable diffusion resistor, comprising:a metal or polysilicon layer, deposited on top of an insulating layer;
a diffusion N-well, implanted beneath said insulating layer, in a silicon substrate; and
two implant regions adjacent to said metal or insulating layer, configured to define a first terminal and a second terminal in said diffusion N-well, and configured to be connected independently from said metal or insulating layer of said on-chip tuneable diffusion resistor.

US Pat. No. 10,249,768

SEMICONDUCTOR DEVICE

Semiconductor Energy Labo...

1. A semiconductor device comprising:a first transistor and a second transistor each over a first insulating
the first transistor comprising:
a first oxide semiconductor film;
a second oxide semiconductor film on and in contact with the first oxide semiconductor film;
a third oxide semiconductor film on and in contact with a top surface of the second oxide semiconductor film and side surfaces of the first oxide semiconductor film and the second oxide semiconductor film;
a first gate insulating film on and in contact with the third oxide semiconductor film; and
a first gate electrode over the first gate insulating film; and
the second transistor comprising:
a fourth oxide semiconductor film;
a second gate insulating film on and in contact with the fourth oxide semiconductor film; and
a second gate electrode over the second gate insulating film,
wherein each of the first oxide semiconductor film, the second oxide semiconductor film, the third oxide semiconductor film, and the fourth oxide semiconductor film comprises indium, gallium, and zinc, and
wherein, in each of the third oxide semiconductor film and the fourth oxide semiconductor film, a proportion of indium atoms is lower than or equal to a proportion of gallium atoms.

US Pat. No. 10,249,767

GA2O3-BASED SEMICONDUCTOR ELEMENT

TAMURA CORPORATION, Toky...

1. A Ga2O3-based semiconductor element, comprising:an undoped ?-Ga2O3 single crystal film disposed on a surface of a ?-Ga2O3 substrate;
a source electrode and a drain electrode disposed on a same side of the undoped ?-Ga2O3 single crystal film;
a gate electrode disposed on the undoped ?-Ga2O3 single crystal film between the source electrode and the drain electrode via a gate insulating film; and
a source region and a drain region formed in the undoped ?-Ga2O3 single crystal film under the source electrode and the drain electrode, respectively, and including a controlled dopant concentration,
wherein the ?-Ga2O3 substrate comprises a semi-insulating ?-Ga2O3 single crystal doped with an element selected from Mg, H, Li, Na, K, Rb, Cs, Fr, Be, Ca, Sr, Ba, Ra, Mn, Fe, Co, Ni, Pd, Cu, Ag, Au, Zn, Cd, Hg, Tl, Pb, N, or P,
wherein a channel is formed in a region of the undoped ?-Ga2O3 single crystal film when a voltage of more than a threshold is applied to the gate electrode, and
wherein a current only flow from the source electrode to the drain electrode through the undoped ?-Ga2O3 single crystal film when the voltage is applied to the gate electrode.

US Pat. No. 10,249,766

SEMICONDUCTOR DEVICE INCLUDING A TRANSISTOR, A WIRING AND A BARRIER FILM

Semiconductor Energy Labo...

1. A semiconductor device comprising:a first oxygen barrier film;
an oxide insulating film over the first oxygen barrier film;
a transistor comprising an oxide semiconductor film;
a wiring electrically connected to the transistor; and
a second oxygen barrier film in contact with the wiring and the first oxygen barrier film,
wherein the oxide semiconductor film is over the oxide insulating film,
wherein the oxide semiconductor film comprises a channel formation region,
wherein the second oxygen barrier film penetrates the first oxygen barrier film,
wherein the second oxygen barrier film comprises aluminum oxide, and
wherein the wiring comprises tungsten.

US Pat. No. 10,249,765

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Semiconductor Energy Labo...

1. A semiconductor device comprising:a capacitor comprising;
a first electrode comprising a protruding portion;
a first insulating film over and in direct contact with a top surface of the protruding portion;
a second insulating film covering the first electrode and the first insulating film; and
a second electrode over the second insulating film,
wherein the first electrode comprises a metal material, or an alloy material,
wherein a peripheral portion of the second electrode comprises a region which overlaps with the first electrode with the first insulating film and the second insulating film provided therebetween,
wherein the second insulating film is in direct contact with a side surface of the protruding portion of the first electrode and a top surface of the first electrode, and
wherein the first insulating film comprises a ring shape.

US Pat. No. 10,249,764

SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE INCLUDING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Semiconductor Energy Labo...

1. A method for manufacturing a semiconductor device, comprising the steps of:forming a gate electrode;
forming a gate insulating film over the gate electrode;
forming an oxide semiconductor film over the gate electrode with the gate insulating film interposed between the gate electrode and the oxide semiconductor film; and
forming a source electrode and a drain electrode over the oxide semiconductor film,
wherein the steps of forming the source electrode and the drain electrode comprise the steps of:
forming a first metal film;
forming a second metal film over the first metal film;
performing a first photolithography process on the second metal film and partly removing the second metal film by first etching;
forming a third metal film over the first metal film and the second metal film to cover the second metal film; and
performing a second photolithography process on the third metal film and partly removing the first metal film and the third metal film by second etching, and
wherein the second etching partly removes the first metal film and the third metal film at an outer side of end portions of the second metal film which is removed by the first etching.

US Pat. No. 10,249,763

ARRAY SUBSTRATE, AND DISPLAY DEVICE, AND FABRICATION METHODS

BOE TECHNOLOGY GROUP CO.,...

1. A semiconductor device, comprising:a first electrode, an insulating layer, and a second electrode, over a substrate;
a conductive layer arranged on the insulating layer at a side away from the substrate;
a semiconductor layer: on the first electrode, on a first sidewall of the insulating layer, on the conductive layer, on a second sidewall of the insulating layer, and on the second electrode, wherein:
the semiconductor layer contacts the first sidewall of the insulating layer, the conductive layer, and the second sidewall of the insulating layer,
the second sidewall is located at an opposite side of the first sidewall, and
the conductive layer is patterned and located between the first sidewall and the second sidewall;
a first gate electrode over a portion of the semiconductor layer that is on the first sidewall of the insulating layer; and
a second gate electrode over a portion of the semiconductor layer that is on the second sidewall of the insulating layer.

US Pat. No. 10,249,762

VERTICALLY ALIGNED NANOWIRE CHANNELS WITH SOURCE/DRAIN INTERCONNECTS FOR NANOSHEET TRANSISTORS

International Business Ma...

1. A method for forming a semiconductor structure, the method comprising:forming a structure comprising at least an alternating stack of semiconductor layers and metal gate material layers formed on a substrate, a metal gate formed on and in contact with a top layer of the alternating stack, a source region and a drain region in contact with the alternating stack, and dielectric layers formed on and in contact with a top surface of the source and drain regions, respectively;
removing a portion of the semiconductor layers and metal gate material layers, wherein the removing forms trenches exposing at least sidewalls of the source and drain regions;
forming a first plurality of interconnects between and in contact with the semiconductor layers and the source region; and
forming a second plurality of interconnects between and in contact with the semiconductor layers and the drain region.

US Pat. No. 10,249,761

THIN-FILM TRANSISTOR SUBSTRATE

JOLED INC., Tokyo (JP)

1. A thin-film transistor substrate, comprising:a substrate;
a thin-film transistor above the substrate; and
a capacitor above the substrate and electrically connected with the thin-film transistor,
wherein the capacitor includes:
a first electrode layer disposed above the substrate and including an electrically conductive material as a main component;
a second electrode layer above and opposed to the first electrode layer and including, as a main component, an oxide semiconductor material to which electrical conductivity is given; and
an insulating layer between the first electrode layer and the second electrode layer,
an extension extending outward from at least a portion of an outer edge of the first electrode layer in plan view id provided to the first electrode layer, and
in plan view, the second electrode layer covers the outer edge of the first electrode layer where no extension is formed.

US Pat. No. 10,249,760

THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY PANEL

Shenzhen China Star Optoe...

1. A thin film transistor, wherein the thin film transistor comprises:a substrate,
a source electrode pattern and a drain electrode pattern separately disposed on the substrate,
a first doping pattern and a second doping pattern respectively comprising a first portion and a second portion, wherein the first portions are respectively covered on the source electrode pattern and the drain electrode pattern, and
an active pattern contacting electrically with the first doping pattern and the second doping pattern respectively,
wherein the second portions of the first doping pattern and the second doping pattern are disposed adjacent to a sidewall of the source electrode pattern and a sidewall of the drain electrode pattern, respectively, a first transition pattern is disposed between the source electrode pattern and the first doping pattern, a second transition pattern is disposed between the drain electrode pattern and the second doping pattern, the first transition pattern and the second transition pattern respectively cover the sidewall of the source electrode pattern and the sidewall of the drain electrode pattern, and the sidewalls of the first doping pattern and the second doping pattern are adjacent to the active pattern, so as to insulate the active pattern from the sidewall of the source electrode pattern and the sidewall of the drain electrode.

US Pat. No. 10,249,759

CONNECTION ARRANGEMENTS FOR INTEGRATED LATERAL DIFFUSION FIELD EFFECT TRANSISTORS

Silanna Asia Pte Ltd, Si...

1. A semiconductor device, comprising:a semiconductor substrate supporting an overlying active layer;
a first lateral diffusion field effect transistor (LDFET) in the active layer and comprising a source, a drain, and a gate;
a second LDFET in the active layer and comprising a source, a drain, and a gate;
a common node electrically and physically connected to the source of the first LDFET and the drain of the second LDFET;
a first front-side contact over the active layer and electrically and physically connected to a first one of: the drain of the first LDFET, the source of the second LDFET, and the common node;
a second front-side contact over the active layer and electrically and physically connected to a second one of: the drain of the first LDFET, the source of the second LDFET, and the common node;
a substrate contact electrically and physically connected to the semiconductor substrate and a third one of: the drain of the first LDFET, the source of the second LDFET, and the common node;
a buried dielectric layer between the semiconductor substrate and the active layer, wherein the substrate contact extends through the buried dielectric layer; and
a dielectric isolation barrier disposed between the first LDFET and the second LDFET and that extends through the active layer to the buried dielectric layer;
wherein each of the first front-side contact, the second front-side contact, and the substrate contact is electrically and physically connected to a different respective one of the drain of the first LDFET, the source of the second LDFET, and the common node.

US Pat. No. 10,249,758

FINFET WITH SIGMA RECESSED SOURCE/DRAIN AND UN-DOPED BUFFER LAYER EPITAXY FOR UNIFORM JUNCTION FORMATION

International Business Ma...

1. A method of forming a semiconductor structure comprising:forming a gate structure over a semiconductor fin that extends upwards from a semiconductor substrate portion, wherein the gate structure comprises a gate stack straddling a channel portion of the semiconductor fin and a gate spacer present on sidewalls of the gate stack;
forming a sigma cavity within the semiconductor fin on each side of the gate structure, wherein the sigma cavity comprises a first horizontal tip region extending beneath the gate spacer and a bottom region extending towards the semiconductor substrate portion;
forming a second sigma cavity intersecting the bottom portion of the sigma cavity, wherein the second sigma cavity comprises a second horizontal tip region located beneath the first horizontal tip region, wherein the second horizontal tip region extends beneath the gate spacer and is adjacent to the channel region of the semiconductor fin;
epitaxially growing a semiconductor buffer region from faceted surfaces of the sigma cavity and the second sigma cavity, wherein the semiconductor buffer region completely fills the first and second horizontal tip regions and the bottom region of the sigma cavity, wherein an unfilled portion of the sigma cavity has substantially vertical sidewalls; and
epitaxially growing a doped semiconductor region from the semiconductor buffer region, wherein the doped semiconductor region completely fills the unfilled portion of the sigma cavity and has substantially vertical sidewalls.

US Pat. No. 10,249,757

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. A semiconductor device, comprising:a substrate including a pattern forming region and a peripheral region;
a first strain relaxed buffer layer on the pattern forming region of the substrate;
a second strain relaxed buffer layer on the peripheral region of the substrate;
a first insulating film pattern on the substrate, an upper portion of the first insulating film pattern being disposed within the first strain relaxed buffer layer, and an upper surface of the first insulating film pattern being covered with the first strain relaxed buffer layer, and a lower portion of the first insulating film patter being disposed within the substrate;
a second insulating film pattern on the substrate, at least a portion of the second insulating film pattern being disposed within the second strain relaxed buffer layer, and an upper surface of the second insulating film pattern being covered with the second strain relaxed buffer layer; and
a gate electrode on the first strain relaxed buffer layer.

US Pat. No. 10,249,756

SEMICONDUCTOR DEVICE INCLUDING MEMORY AND LOGIC CIRCUIT HAVING FETS WITH FERROELECTRIC LAYER AND MANUFACTURING METHODS THEREOF

Taiwan Semiconductor Manu...

1. A semiconductor device, comprising:a memory circuit including:
a word line;
a bit line;
a common line; and
a memory transistor having a gate coupled to the word line, a drain coupled to the bit line and a source coupled to the common line; and
a logic circuit including:
a logic transistor having a gate, a drain and a source, wherein:
the gate of the memory transistor has a gate electrode layer formed on a gate dielectric layer, the gate dielectric layer including a first insulating layer and a first ferroelectric (FE) material layer, and
the gate of the logic transistor has a gate electrode layer formed on a gate dielectric layer, the gate dielectric layer including a second insulating layer and a second FE material layer,
wherein a thickness of the first insulating layer is different from a thickness of the second insulating layer.

US Pat. No. 10,249,755

TRANSISTOR WITH ASYMMETRIC SOURCE/DRAIN OVERLAP

International Business Ma...

1. A method of fabricating an asymmetric field-effect transistor device, comprising:obtaining a structure including a semiconductor substrate, sacrificial mandrels on the semiconductor substrate, dummy gates on sidewalls of the sacrificial mandrels, and a vertical trench between a pair of the dummy gates;
filling the vertical trench with a filling material having a different composition from the mandrels and dummy gates;
selectively removing the mandrels to expose first portions of the semiconductor substrate;
subjecting the first portions of the semiconductor substrate to a first etching process, thereby forming first recesses within the first portions of the semiconductor substrate;
removing the filling material from the vertical trench to expose a second portion of the semiconductor substrate;
subjecting the first and second portions of the semiconductor substrate to a second etching process, thereby enlarging the first recesses within the first portions of the semiconductor substrate and forming a second recess in the second portion of the semiconductor substrate, the first recesses extending further vertically within the semiconductor substrate than the second recess following the second etching process;
epitaxially growing embedded source regions within the first recesses in the first portions of the semiconductor substrate;
epitaxially growing an embedded drain region within the second recess on the second portion of the semiconductor substrate;
removing the dummy gates, and
replacing the dummy gates with a gate dielectric layer and metal gate material on the gate dielectric layer.