US Pat. No. 10,336,819

ANTI-TAU ANTIBODIES AND METHODS OF USE

Genentech, Inc., South S...

1. A method of treating a Tau protein associated disease comprising administering to an individual with the Tau protein associated disease a monoclonal antibody that binds to human Tau, wherein the antibody comprises:a) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 342; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 343; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 344; HVR-L1 comprising an amino acid sequence selected from SEQ ID NOs: 345, 15, 468 to 478, 495 to 517, 522 to 534, 536 to 539, and 543 to 556; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 346; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 347;
b) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 72; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 73; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 74; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 75; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 76; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 77;
c) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 42; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 43; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 44; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 45; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 46; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 47;
d) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 62; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 63; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 64; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 65; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 66; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 67;
e) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 212; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 213; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 214; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 215; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 216; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 217;
f) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 32; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 33; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 34; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 35; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 36; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 37; or
g) HVR-H1 comprising the amino acid sequence of SEQ ID NO: 52; HVR-H2 comprising the amino acid sequence of SEQ ID NO: 53; HVR-H3 comprising the amino acid sequence of SEQ ID NO: 54; HVR-L1 comprising the amino acid sequence of SEQ ID NO: 55; HVR-L2 comprising the amino acid sequence of SEQ ID NO: 56; and HVR-L3 comprising the amino acid sequence of SEQ ID NO: 57.
US Pat. No. 10,336,820

ANTIBODIES DIRECTED TO ANGIOPOIETIN-1 AND ANGIOPOIETIN-2 AND USES THEREOF

Amgen Inc., Thousand Oak...

1. A method of treating a solid tumor in a subject, comprising administering to the subject an effective amount of an isolated monoclonal antibody to inhibit tumor-associated neovascularization, wherein said antibody comprises a heavy chain variable domain and a light chain variable domain, wherein said heavy chain comprises 3 CDRs and said light chain comprises 3 CDRs, wherein the sequences of said CDRs of said antibody are selected from the group consisting of:(a) SEQ ID NOs: 18, 26, 32 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(b) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(c) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 20, 27, 36 of the LC,
(d) SEQ ID NOs: 18, 26, 37 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(e) SEQ ID NOs: 18, 26, 38 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(f) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(g) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 21, 27, 33 of the LC,
(h) SEQ ID NOs: 18, 28, 39 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(i) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 22, 27, 33 of the LC,
(j) SEQ ID NOs: 18, 26, 32 of the HC plus SEQ ID NOs: 22, 27, 33 of the LC,
(k) SEQ ID NOs: 18, 29, 39 of the HC plus SEQ ID NOs: 19, 27, 33 of the LC,
(l) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 23, 27, 33 of the LC,
(m) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 20, 27, 40 of the LC,
(n) SEQ ID NOs: 18, 26, 32 of the HC plus SEQ ID NOs: 21, 27, 33 of the LC,
(o) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 24, 27, 33 of the LC,
(p) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 21, 27, 33 of the LC,
(q) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 23, 27, 33 of the LC,
(r) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 20, 30, 33 of the LC,
(s) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 25, 27, 33 of the LC,
(t) SEQ ID NOs: 18, 26, 35 of the HC plus SEQ ID NOs: 20, 30, 33 of the LC,
(u) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 20, 27, 40 of the LC, and
(v) SEQ ID NOs: 18, 26, 34 of the HC plus SEQ ID NOs: 20, 31, 33 of the LC;wherein said antibody specifically binds to at least one of Angiopoietins-1 (Ang-1) and Angiopoetin-2 (Ang-2) ligands of Tie 2 receptor tyrosine kinase.
US Pat. No. 10,336,822

EARLY MARKER OF PROTEINURIA IN PATIENTS TREATED WITH AN ANTI-VEGF TREATMENT

Mayo Foundation for Medic...

1. A method for treating a human having cancer, wherein said method comprises:(a) administering an original dose of an anti-VEGF therapy to said human to treat said cancer, and
(b) administering a subsequent dose of said anti-VEGF therapy to said human, wherein said human, following administration of said original dose, was identified as having a urine sample that lacks podocytes or polypeptides expressed by podocytes, wherein said subsequent dose is the same amount as said original dose.
US Pat. No. 10,334,772

GROWTH ENHANCEMENT OF PLANT

RHODIA OPERATIONS, Paris...

18. A seed coated by at least one cationic galactomannan selected from the group consisting of: cationic fenugreek gum, cationic tara gum, cationic locust bean gum, and cationic cassia gum, wherein the at least one cationic compound has an average Molecular Weight of from about 20,000 Daltons to 20,000,000 Daltons.
US Pat. No. 10,336,824

ANTI-PDL1 ANTIBODIES, ACTIVATABLE ANTI-PDL1 ANTIBODIES, AND METHODS OF THEREOF

CytomX Therapeutics, Inc....

1. An isolated antibody or antigen binding fragment thereof (AB) wherein the AB comprises:(a) a heavy chain variable region (VH) comprising:
i. a variable heavy chain complementarity determining region 1 (VH CDR1) comprising the amino acid sequence of SEQ ID NO: 2.12;
ii. a variable heavy chain complementarity determining region 2 (VH CDR2) comprising the amino acid sequence of SEQ ID NO: 246;
iii. a variable heavy chain complementarity determining region 3 (VH CDR3) comprising the amino acid sequence of SEQ ID NO: 235; and
(b) a light chain variable region (VL) comprising:
i. a variable light chain complementarity determining region 1 (VL CDR1) comprising the amino acid sequence of SEQ ID NO: 209;
ii. a variable light chain complementarity determining region 2 (VL CDR2) comprising an amino acid sequence of SEQ ID NOs: 215 or 227; and
iii. a variable light chain complementarity determining region 3 (VL CDR3) comprising the amino acid sequence of SEQ ID NO: 228,
wherein the AB specifically binds mammalian PDL1.
US Pat. No. 10,337,085

DIE CASTING ALUMINUM ALLOY AND PRODUCTION METHOD THEREOF, AND COMMUNICATIONS PRODUCT

Huawei Technologies Co., ...

1. A die casting aluminum alloy consisting of the following components in percentage by mass:13.5% to 14.0% of silicon;
0.1% to 0.9% of manganese;
0.1% to 1.0% of magnesium;
0.3% to 1.4% of iron; and
less than or equal to 0.2% of copper and greater than 0% copper, and
a balance being aluminum and inevitable impurities.
US Pat. No. 10,336,830

ANTIBODIES AGAINST HUMAN CSF-1R AND USES THEREOF

HOFFMANN-LA ROCHE INC., ...

1. An isolated nucleic acid encoding an antibody binding to CSF-1R, wherein the antibody comprises a heavy chain variable domain and a light chain variable domain, and wherein:a) the heavy chain variable domain comprises a CDR3 region of SEQ ID NO: 1, a CDR2 region of SEQ ID NO: 2, and a CDR1 region of SEQ ID NO: 3, and the light chain variable domain comprises a CDR3 region of SEQ ID NO: 4, a CDR2 region of SEQ ID NO:5, and a CDR1 region of SEQ ID NO:6, or
b) the heavy chain variable domain comprises a CDR3 region of SEQ ID NO: 9, a CDR2 region of SEQ ID NO: 10, and a CDR1 region of SEQ ID NO: 11, and the light chain variable domain comprises a CDR3 region of SEQ ID NO: 12, a CDR2 region of SEQ ID NO: 13, and a CDR1 region of SEQ ID NO: 14.
US Pat. No. 10,336,832

METHODS OF INHIBITING PLASMA KALLIKREIN IN EDEMA PATIENT

Dyax Corp., Lexington, M...

1. A method of inhibiting plasma kallikrein in a subject, the method comprising:administering to a subject in need thereof an antibody that binds to the active form of human plasma kallikrein and does not bind human prekallikrein;
wherein the subject has edema; and wherein the antibody comprises a heavy chain immunoglobulin variable domain sequence comprising three complementarity determining regions (CDRs) from the heavy chain variable domain of an antibody selected from the group consisting of: M162-A04, M160-G12, M142-H08, X63-G06, X101-A01, X81-B01, X67-D03, X67-G04, X115-B07, X115-D05, X115-E09, X115-H06, X115-A03, X115-D01, X115-G04, M29-D09, M145-D11, M06-D09, M76-D01, and M35-G04, and a light chain immunoglobulin variable domain sequence comprising three CDRs from the light chain variable domain of the selected antibody.
US Pat. No. 10,336,833

CONJUGATED ANTI-CD38 ANTIBODIES

Takeda Pharmaceutical Com...

1. An isolated antibody that specifically binds human CD38 (SEQ ID NO:1) and cynomolgus CD38 (SEQ ID NO:2) comprising:a) a heavy chain variable region comprising:
i) a first CDR comprising SEQ ID NO:3;
ii) a second CDR comprising SEQ ID NO:4;
iii) a third CDR comprising SEQ ID NO:5; and
b) a light chain variable region comprising:
i) a first CDR comprising SEQ ID NO:6;
ii) a second CDR comprising SEQ ID NO:7;
iii) a third CDR comprising SEQ ID NO:8; and
c) a covalently attached drug moiety,wherein the heavy chain variable region comprises an amino acid sequence having an identity of at least 90% to SEQ ID NO:9 and the light chain variable region comprises an amino acid sequence having an identity of at least 90% to SEQ ID NO:10.
US Pat. No. 10,337,091

HIGH HEAT RESISTANT STEEL WITH LOW NICKEL

Hyundai Motor Company, S...

1. A high heat resistant steel having enhanced castability consisting of:C from about 0.5 to 0.7 wt %,
Si from about 1.3 to 1.7 wt %,
Mn from about 0.6 to 1.0 wt %,
Ni from about 24.0 to 26.0 wt %,
Cr from about 18.0 to 20.0 wt %,
Nb from about 1.0 to 2.0 wt %,
N from about 0.15 to 0.20 wt %, and
the remainder of iron (Fe), and inevitable impurities, based on a total weight of the high heat resistant steel,
wherein a value of X/Y is 0.44 to 0.47;
the X is a value calculated by Equation 1;
X=Cr (wt %)+1.5×Si (wt %)+0.5×Nb (wt %)  [Equation 1]
the Y is a value calculated by Equation 2;
Y=Ni (wt %+0.5×Mn (wt %)+30×C (wt %)+30×N (wt %),  [Equation 2]
wherein the steel has 190 MPa or more of tensile strength at 900° C.
US Pat. No. 10,336,837

PROCESS FOR PRODUCING OLEFIN POLYMER AND OLEFIN POLYMER

MITSUI CHEMICALS, INC., ...

1. A 1-butene polymer which has a meso pentad fraction as measured by 13C-NMR of 98.0% to 99.8%, has a melting point (Tm) of 120 to 150° C., and has a molecular weight distribution (Mw/Mn) of 1.5 to 2.75.
US Pat. No. 10,337,094

HOT-DIP GALVANIZED STEEL SHEET AND PRODUCTION METHOD THEREFOR

JFE Steel Corporation, T...

1. A hot-dip galvanized steel sheet comprising a steel sheet having a composition containing 0.100% to 0.200% C, 0.50% or less Si, 0.60% or less Mn, 0.100% or less P, 0.0100% or less S, 0.010% to 0.100% Al, and 0.0100% or less N on a mass basis, the remainder comprising Fe and inevitable impurities, the steel sheet having a microstructure containing a ferrite phase having an area fraction of 60% to 79%, a pearlite phase having an area fraction of 20% to 30%, and a bainite phase having an area fraction of 1% to 5%, the area fraction of a cementite phase present in a grain of the ferrite phase being 1% or more and 5% or less, wherein the hot-dip galvanized steel sheet has an elongation of 35.6% or more, a tensile strength of 440 MPa to 490 MPa, and a stretch flangeability of 77% or more.
US Pat. No. 10,336,839

FARNESENE-BASED POLYMERS AND LIQUID OPTICALLY CLEAR ADHESIVE COMPOSITIONS INCORPORATING THE SAME

FINA TECHNOLOGY, INC., H...

1. A laminated screen assembly comprising a transparent layer adhered to a display and a cured adhesive between the transparent layer and the display, wherein the cured adhesive is obtained by curing a liquid optically clear adhesive composition comprising a polymer derived from monomers comprising farnesene, the polymer being obtained from a diol prepared by anionically polymerizing monomers comprising farnesene to provide an intermediate polymer having two living ends, quenching the two living ends by reacting the two living ends with an alkylene oxide and a protic source, and hydrogenating the diol, wherein hydroxyl groups of the diol have been further reacted to provide terminal ends functionalized with (meth)acrylate groups and wherein the polymer has a degree of unsaturation less than or equal to 50%.
US Pat. No. 10,337,100

SPUTTERING TARGET COMPRISING NI—P ALLOY OR NI—PT—P ALLOY AND PRODUCTION METHOD THEREFOR

1. A method of producing a Ni—P alloy sputtering target, wherein a Ni—P alloy containing 15 to 17 wt % of P and remainder being Ni and unavoidable impurities is melted and atomized to prepare a Ni—P alloy atomized powder having an average grain size of 100 ?m or less, the Ni—P alloy atomized powder is mixed with a Ni atomized powder, and the obtained mixed powder is hot pressed to produce a sintered compact containing 1 to 10 at % of P and a remainder of Ni and unavoidable impurities.
US Pat. No. 10,336,845

LOW ETHYLENE AMORPHOUS PROPYLENE-ETHYLENE-DIENE TERPOLYMER COMPOSITIONS

ExxonMobil Chemical Paten...

1. A propylene-ethylene-diene terpolymer comprising from 2% to 25% by weight of ethylene, from 98% to 75% by weight propylene and from 1% to 21% by weight of a diene, wherein the terpolymer has a crystallinity of less than 3%, a melt flow rate (MFR) of less than 10 g/10 min, and a Tg by DSC of from ?2° C. to ?25° C., and wherein the terpolymer does not comprise isotactic polypropylene sequences.
US Pat. No. 10,336,847

VINYL CHLORIDE-BASED POLYMER, METHOD FOR PREPARING THE SAME, AND THERMOPLASTIC RESIN COMPOSITION CONTAINING THE SAME

LG CHEM, LTD., Seoul (KR...

1. A vinyl chloride-based polymer containing 0.001 parts by weight or more and less than 2 parts by weight of an unsaturated fatty acid ester on the basis of 100 parts by weight of the vinyl chloride-based polymer,wherein the vinyl chloride-based polymer comprises a vinyl chloride-based monomer and the unsaturated fatty acid ester,
wherein the vinyl chloride-based monomer is a vinyl chloride monomer alone, or a combination of a vinyl chloride monomer and a comonomer copolymerizable therewith,
wherein the comonomer is a vinyl-based monomer,
wherein the unsaturated fatty acid ester includes cis- and trans-isomers of the unsaturated fatty acid ester, and
wherein the weight ratio between the cis- and trans-isomers of the unsaturated fatty acid ester is 60:40 to 90:10.
US Pat. No. 10,334,797

MELON PLANTS WITH A DOMINANT MELON YELLOWING ASSOCIATED VIRUS (MYAV) RESISTANCE GENE

NUNHEMS B.V., Nunhem (NL...

1. A non-wild cultivated Cucumis melo plant, or part thereof, comprising resistance against Melon Yellowing associated Virus (MYaV) wherein said resistance is conferred by an introgression fragment on chromosome 6 in homozygous or heterozygous form and wherein said introgression fragment is from a wild accession of the species Cucumis melo, a representative sample of seeds of said wild accession having been deposited under accession number NCI MB 41967 or NCIMB 41968, wherein said introgression fragment comprises at least two of the following SNP markers:a) the CC or AC genotype for the Single Nucleotide Polymorphism marker mME15090 in SEQ ID NO: 1;
b) the AA or AG genotype for the Single Nucleotide Polymorphism marker mME12135 in SEQ ID NO: 3;
c) the AA or AG genotype for the Single Nucleotide Polymorphism marker mME21377 in SEQ ID NO: 8; and/or
d) the TT or CT genotype for the Single Nucleotide Polymorphism marker mME13585 in SEQ ID NO: 12.
US Pat. No. 10,334,798

MELON VARIETY NUN 16215 MEM

NUNHEMS B.V., Nunhem (NL...

1. A plant, plant part or seed of melon variety NUN 16215 MEM, wherein a representative sample of seed of said melon variety is deposited under Accession Number NCIMB 43373.
US Pat. No. 10,336,849

COPOLYMER COMPRISING OXAZOLINE MONOMERS AND USE THEREOF AS CROSSLINKER

BASF SE, Ludwigshafen (D...

1. A copolymer A, comprising:at least one monomer (a) selected from the group consisting of a C1-20-alkyl (meth)acrylate, a C8-20-vinylaromatic, and a combination thereof;
at least one ethylenically unsaturated monomer (b), which comprises at least one sulfonic acid group (—SO3M), wherein M is one or more metals;
at least one ethylenically unsaturated monomer (c), which comprises at least one oxazoline group;
and optionally at least one further monomer (d) and/or additive,
wherein a fraction of the monomers (b) and (c) is in total less than 50% by weight, based on the total amount of the monomers in the copolymer A, and
wherein the copolymer A is a water-soluble polymer having a solubility in water of at least 100 g/l.
US Pat. No. 10,334,799

HYBRID TOMATO VARIETY H1765

H.J. Heinz Company Brands...

1. Tomato seed designated as ‘H1765’, representative sample of seed having been deposited under ATCC Accession Number PTA-124675.
US Pat. No. 10,334,801

SOYBEAN VARIETY SM14328903

Agrigenetics, Inc., Indi...

1. A seed of soybean variety SM14328903, wherein a representative sample of the seed having been deposited under ATCC Accession No. PTA-123575.
US Pat. No. 10,334,802

MAIZE HYBRID X00M487

PIONEER HI-BRED INTERNATI...

1. A seed of hybrid maize variety X00M487, representative seed produced by crossing a first plant of variety PH42WT with a second plant of variety PH1W4R, wherein representative seed of the varieties PH42WT and PH1W4R have been deposited under ATCC Accession Numbers PTA-124778 and PTA-121351, respectively.
US Pat. No. 10,336,853

POLYMER, PROCESS AND COMPOSITION

DSM IP ASSETS B.V., Heer...

1. A process for preparing a copolymer having a low molecular weight and high glass transition temperature, wherein the process comprises conducting a solution polymerisation process of a monomer composition comprising:(a) from 20 to 80 wt-% of at least one itaconate functional monomer not containing acidic groups or precursor acid groups,
(b) not more than 40 wt-% of an acid functional monomer in an amount sufficient to achieve an acid value from 160 to 325 mg KOH per g of solid copolymer, and
(c) optionally not more than 72 wt. % of monomers other than monomers (a) or (b); wherein
the weight percentages of monomers (a), (b) and (c) total 100% and are calculated as a proportion of the total amount of monomers in the copolymer being 100%; and with the provisos:
(I) the copolymer has a number average molecular weight (Mn) of no more than 15 kilograms per mole; and
(II) the copolymer has a glass transition temperature of at least 75° C., and
(III) the copolymer contains less than 40 wt-% vinyl aromatic monomer; and optionally
(IV) the copolymer contains less than 40 wt-% methacrylate monomer.
US Pat. No. 10,334,803

MAIZE HYBRID X95M224

PIONEER HI-BRED INTERNATI...

1. A seed of hybrid maize variety X95M224, representative seed produced by crossing a first plant of variety PH259Y with a second plant of variety PH2RRS, wherein representative seed of the varieties PH259Y and PH2RRS have been deposited under ATCC Accession Numbers PTA-122443 and PTA-124303, respectively.
US Pat. No. 10,336,854

ALKOXYSILANE-FUNCTIONALIZED AND ALLOPHANATE-FUNCTIONALIZED URETHANES

Evonik Degussa GmbH, Ess...

1. An alkoxysilane-functionalized and allophanate-functionalized urethane comprising the reaction product ofat least one alkoxysilane group-containing monourethane A) of formula 1
Rn(OR1)3-nSi—R2—NH—(C?O)—OR3  formula 1
where Rn, R1, and R3 are each independently hydrocarbyl radicals having 1-8 carbon atoms, which may be linear, branched or cyclic, or else may be integrated together to form a cyclic system, and n is 0-2,
R2 is a diradical having 1-8 carbon atoms, which may be linear, branched or cyclic, or else may be integrated together to form a cyclic system,
and
at least one diisocyanate B),
in a molar ratio of A) to B) of from 1.0:1.5 to 1.0:0.6,
optionally in the presence of at least one catalyst K),
and the subsequent the at least one reaction product
with at least one diol and/or polyol C),
optionally in the presence of at least one catalyst K),
in the ratio of the NCO groups of the at least one reaction product to the OH groups of the diol and/or polyol C of from 1.0:1.5 to 1.0:0.6.
US Pat. No. 10,337,110

DEVICE AND METHOD FOR THE FLEXIBLE USE OF ELECTRICITY

Covestro Deutschland AG, ...

1. A method for flexible use of electrical power, wherein chlorine is produced by chlor-alkali electrolysis in a device comprising an electrolysis cell for chlor-alkali electrolysis having an anode half-cell, a cathode half-cell and a cation exchange membrane that separates the anode half-cell and the cathode half-cell from one another, an anode arranged in the anode half-cell for evolution of chlorine, an oxygen-consuming electrode arranged in the cathode half-cell as cathode, and a conduit for supply of gaseous oxygen to the cathode half-cell, wherein the device has at least one conduit for purging of the cathode half-cell with inert gas and wherein:a) when power supply is low, the oxygen-consuming electrode is supplied with gaseous oxygen, and oxygen is reduced at the oxygen-consuming electrode at a first cell voltage; and
b) when power supply is high, the oxygen-consuming electrode is not supplied with oxygen, and hydrogen is generated at the cathode at a second cell voltage which is higher than the first cell voltage.
US Pat. No. 10,334,804

PLANTS AND SEEDS OF HYBRID CORN VARIETY CH464053

Monsanto Technology LLC, ...

1. A seed of hybrid corn variety CH464053, produced by crossing a first plant of variety CV691450 with a second plant of variety CV759867, wherein representative seeds of said varieties CV691450 and CV759867 are deposited under ATCC Accession Nos. PTA-125241 and PTA-124497, respectively.
US Pat. No. 10,334,805

PLANTS AND SEEDS OF HYBRID CORN VARIETY CH818252

Monsanto Technology LLC, ...

1. A seed of hybrid corn variety CH818252, produced by crossing a first plant of variety CV730108 with a second plant of variety CV644326, wherein representative seeds of said varieties CV730108 and CV644326 are deposited under ATCC Accession Nos. PTA-124485 and PTA-125218, respectively.
US Pat. No. 10,336,856

ALKOXYSILANE- AND ALLOPHANATE-FUNCTIONALIZED COATING MATERIALS

Evonik Degussa GmbH, Ess...

1. An alkoxysilane-functionalized and allophanate-functionalized coating material comprisinga) a binder component of 10-99 wt % of at least one reaction product of
one an alkoxysilane-containing monourethane A) of formula 1
Rn(OR1)3-nSi—R2—NH—(C?O)—OR3  formula 1
wherein R, R1, and R3 independently of one another represent hydrocarbon radicals, and R2 is a diradical, having 1-8 carbon atoms, wherein these may be linear, branched or cyclic or else may be integrated together to form a cyclic system, and n represents 0-2, and
a diisocyanate B),
optionally in the presence of at least one catalyst K),
in a molar ratio of A) to B) of from 1.0:1.5 to 1.0:0.6,
II,
and subsequent reaction of the at least one reaction product
with at least one diol and/or polyol C),
in the presence of at least one catalyst K),
in a ratio of NCO groups of reaction product to OH groups of the diol and/or polyol C) of from 1.0:1.5 to 1.0:0.6;
b) from 1-90 wt % of a hydroxyl-containing or amino-containing binder component,
c) from 0-50 wt % of at least one aromatic, aliphatic or cycloaliphatic polyisocyanate having an NCO functionality of at least 2,
d) from 0-5 wt % of at least one catalyst,
wherein a)-d) add up to 100 wt %,
e) optionally auxiliaries and/or additives,
f) optionally solvents.
US Pat. No. 10,334,807

PLANTS AND SEEDS OF HYBRID CORN VARIETY CH288822

MONSANTO TECHNOLOGY LLC, ...

1. A seed of hybrid corn variety CH288822, produced by crossing a first plant of variety CV181138 with a second plant of variety CV844429, wherein representative seeds of said varieties CV181138 and CV844429 are deposited under ATCC Accession Nos. PTA-123825 and PTA-121106, respectively.
US Pat. No. 10,334,808

PLANTS AND SEEDS OF HYBRID CORN VARIETY CH181639

Monsanto Technology LLC, ...

1. A seed of hybrid corn variety CH181639, produced by crossing a first plant of variety CV595836 with a second plant of variety CV093813, wherein representative seeds of said varieties CV595836 and CV093813 are deposited under ATCC Accession Nos. PTA-PTA-125248 and PTA-123818, respectively.
US Pat. No. 10,334,809

SOYBEAN VARIETY AM10995412

Agrigenetics, Inc., Indi...

1. A seed of soybean variety AM10995412, wherein a representative sample of the seed having been deposited under ATCC Accession No. PTA-125666.
US Pat. No. 10,334,810

SOYBEAN VARIETY MN11277371

Agrigenetics, Inc., Indi...

1. A seed of soybean variety MN11277371, wherein a representative sample of the seed having been deposited under ATCC Accession No. PTA-123684.
US Pat. No. 10,336,861

PHOSPHORUS-CONTAINING CAPROLACTONE MONOMERS FOR SYNTHESIS OF FLAME RETARDANT POLYCAPROLACTONES

International Business Ma...

1. A flame retardant polycaprolactone formed according to a process comprising:utilizing a caprolactone molecule to form a hydroxyl-functionalized caprolactone molecule;
chemically reacting the hydroxyl-functionalized caprolactone molecule with a phosphorus-containing flame retardant molecule to form a flame retardant-functionalized caprolactone monomer, wherein the phosphorus-containing flame retardant molecule includes an allyl group, an epoxide group, or a furan group; and
polymerizing a mixture that includes at least the flame retardant-functionalized caprolactone monomer to form a flame retardant polycaprolactone.
US Pat. No. 10,334,811

SOYBEAN VARIETY 5PQBB44

PIONEER HI-BRED INTERNATI...

1. A plant or a seed of soybean variety 5PQBB44, representative seed of the variety having been deposited under ATCC Accession Number PTA-125282.
US Pat. No. 10,334,812

ALFALFA VARIETY RRL913T404

Forage Genetics Internati...

1. A seed of alfalfa variety RRL913T404, wherein representative seed of said alfalfa variety have been deposited under ATCC Accession No. PTA-125618.
US Pat. No. 10,334,813

BEAN VARIETY SVGA4608

Seminis Vegetable Seeds, ...

1. A bean plant of bean line SVGA4608, a sample of seed of the line having been deposited under ATCC Accession Number PTA-124713.
US Pat. No. 10,337,376

EXHAUST GAS PURIFICATION SYSTEM FOR AN INTERNAL COMBUSTION ENGINE

Toyota Jidosha Kabushiki ...

1. An exhaust gas purification system for an internal combustion engine, comprising:a first fuel supply unit configured to supply fuel to exhaust gas flowing through an exhaust passage of the internal combustion engine with a supply valve arranged in the exhaust passage;
a second fuel supply unit configured to supply fuel to exhaust gas to be discharged to the exhaust passage by adjusting a fuel injection condition for the internal combustion engine;
an oxidation catalyst arranged in the exhaust passage on a downstream side of the supply valve;
a calculation unit configured to calculate a concentration of fuel in the exhaust gas flowing into an NOx selective catalytic reduction catalyst;
a threshold obtaining unit configured to obtain, based on the temperature of the NOx selective catalytic reduction catalyst, a predetermined fuel concentration threshold;
an exhaust gas purification device arranged in the exhaust passage on a downstream side of the oxidation catalyst, the exhaust gas purification device comprising an exhaust gas purification element and the NOx selective catalytic reduction catalyst; and
a temperature rise control unit configured to carry out temperature raising processing which raises a temperature of exhaust gas flowing into the exhaust gas purification device by supplying fuel to the exhaust gas and oxidizing the supplied fuel in the oxidation catalyst, in order to raise a temperature of the exhaust gas purification element to a predetermined target temperature,
wherein, in the temperature raising processing, the temperature rise control unit is configured to:
raise the temperature of the exhaust gas purification element to the predetermined target temperature by performing first control in which fuel supply by the first fuel supply unit is carried out;
maintain the exhaust gas purification element at the predetermined target temperature by performing at least second control in which a ratio of an amount of fuel supply by the second fuel supply unit with respect to an amount of fuel supply by the first fuel supply unit becomes higher in comparison with that when performing the first control;
when the temperature of the NOx selective catalytic reduction catalyst exceeds a predetermined temperature threshold and the fuel concentration calculated by the calculation unit does not exceed the predetermined fuel concentration threshold, maintain the exhaust gas purification element at the predetermined target temperature by performing the first control, without performing the second control; and
when the temperature of the NOx selective catalytic reduction catalyst exceeds the predetermined temperature threshold and the fuel concentration calculated by the calculation unit exceeds the predetermined fuel concentration threshold, maintain the exhaust gas purification element at the predetermined target temperature by performing the second control.
US Pat. No. 10,334,814

PEA VARIETY SV5685QG

Seminis Vegetable Seeds, ...

1. A pea plant of pea line SV5685QG, a sample of seed of the line having been deposited under ATCC Accession Number PTA-124985.
US Pat. No. 10,336,869

CARBON FIBER-REINFORCED RESIN COMPOSITION AND SHAPED PRODUCT OBTAINED THEREFROM

MITSUI CHEMICALS, INC., ...

1. A carbon fiber-reinforced resin composition, comprising:100 parts by mass of a polymer alloy (A) which comprises:
25 to 95% by mass of one or more propylene-based polymers (p) selected from a propylene-ethylene block copolymer, a propylene homopolymer and a propylene-ethylene random copolymer having an ethylene content of 5% by mass or less,
1 to 60% by mass of an acid-modified polyolefin resin (m),
0 to 40% by mass of an ethylene-based polymer (e) and
0 to 50% by mass of a polyamide (n)
wherein the total of the component (p), the component (m), the component (e) and the component (n) is 100% by mass, and
1 to 200 parts by mass of a carbon fiber (B);
the acid-modified polyolefin resin (m) comprises a maleic acid-modified propylene-based polymer (m1);
the total of Wp and Wm1 is 50 to 98% by mass, in which the content of the component (p) is expressed by Wp % by mass, the content of the component (m1) is expressed by Wm1% by mass (the content of the whole component (m) is expressed by Wm % by mass), the content of the component (e) is expressed by We % by mass, and the content of the component (n) is expressed by Wn % by mass in the polymer alloy (A), and the total of Wp, Wm, We and Wn is 100% by mass; and additionally; and,
the following formula (1):
QP×log(MFRP)+Qml×log(MFRml)>log 120  (1)
wherein, QP=WP/(WP+Wml), Qml=Wml/(WP+Wml)is satisfied in which the melt flow rate (MFR) of the component (p) measured at 230° C. under a load of 2.16 kg according to ASTM D1238 is expressed by MFRp (g/10 min) and the melt flow rate (MFR) of the component (m1) measured at 230° C. under a load of 2.16 kg according to ASTM D1238 is expressed by MFRm1 (g/10 min); and,wherein the melt flow rate MFR of the polymer alloy (A), measured at 230° C. under a load of 2.16 kg according to ASTM D1238, is 30 to 500 g/10 min.
US Pat. No. 10,340,461

COMPOSITION FOR FORMING HOLE COLLECTING LAYER OF PHOTOSENSOR ELEMENT, AND PHOTOSENSOR ELEMENT

NISSAN CHEMICAL INDUSTRIE...

1. A photosensor element comprising an anode layer, a hole-collecting layer provided so as to be in contact with the anode layer, and a photoelectric conversion layer provided so as to be in contact with the hole-collecting layer,wherein the hole-collecting layer made from the photosensor element hole-collecting layer-forming composition comprises a charge-transporting substance having a molecular weight of from 200 to 2,000 and an organic solvent.
US Pat. No. 10,335,855

ADDITIVE MANUFACTURING OF FUNCTIONALLY GRADIENT DEGRADABLE TOOLS

BAKER HUGHES, A GE COMPAN...

1. An article comprising a plurality of micro-sized or nano-sized galvanic cells, wherein the article has a seamless structure encompassing a plurality of empty spaces of different sizes, geometries, distributions, or a combination thereof, and one or more of the following properties of the article vary in different directions: tensile strength; compressive strength; electrical resistance; thermal conductance; modulus; or hardness.
US Pat. No. 10,340,470

LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING APPARATUS

Semiconductor Energy Labo...

1. A light-emitting element comprising:a cathode;
an anode;
a light-emitting layer;
a first layer;
a second layer; and
a third layer,
wherein the first layer is provided between the cathode and the light-emitting layer,
wherein the second layer is provided between the light-emitting layer and the third layer and comprises a region in contact with the third layer,
wherein the third layer is provided between the second layer and the anode and comprises a region in contact with the anode,
wherein the first layer comprises an alkali metal or an alkaline earth metal,
wherein the third layer comprises an alkali metal or an alkaline earth metal, and
wherein the second layer comprises a material having a function of transporting an electron.
US Pat. No. 10,336,883

COMPOSITIONS PREPARED USING AN IONIC CROSSLINKING AGENT AND METHODS OF MAKING THE SAME

BASF SE, Ludwigshafen (D...

1. An asphalt composition comprising:asphalt; aggregate; and
a crosslinked product prepared by ionically crosslinking a random copolymer derived from styrene and butadiene using an ionic crosslinking agent.
US Pat. No. 10,337,140

METHOD OF MANUFACTURING A PENETRATION-RESISTANT ARTICLE THAT INCLUDES A TEXTILE FABRIC MADE FROM ARAMID FIBERS

TEIJIN ARAMID GMBH, Wupp...

1. A method of manufacturing a penetration-resistant article that comprises a textile fabric made from at least 80 wt. % of aramid fibers, the method comprising:a) finishing aramid fibers with finish solids comprising a carbonic acid polyester, wherein the carbonic acid polyester is produced by polycondensation of a carbonic acid ester or carbonic acid dichloride with one or more diols, and one chain end or both chain ends of the carbonic acid polyester comprises a hydroxyl group or an alkyl radical of a monovalent alcohol;
b) processing the finished aramid fibers into a textile fabric comprising the finished aramid fibers; and
c) processing the textile fabric into a penetration-resistant article, wherein the finish solids substantially remain on the finished aramid fibers throughout steps b) and c).
US Pat. No. 10,336,885

SAPONIFIED ETHYLENE-VINYL ESTER COPOLYMER COMPOSITION AND MULTILAYERED STRUCTURE USING SAID COMPOSITION

MITSUBISHI CHEMICAL CORPO...

1. A resin composition comprising (A) a saponified ethylene-vinyl ester copolymer and (B) a hydrate-formable alkaline earth metal salt,wherein the (B) hydrate-formable alkaline earth metal salt satisfies water absorption properties (I), (II), and (III):
(I) a ratio of X5/Y being in the range of 0.2 to 2.0 wherein the X5 is an amount of water absorption when (B) hydrate-formable alkaline earth metal salt is placed under a condition of 40 ° C. and 90% relative humidity for 5 days, and (Y) is a content of crystallization water in maximum hydrate of the (B) hydrate-formable alkaline earth metal salt;
(II) an amount of water absorption (Z) based on 100 g of (B) hydrate-formable alkaline earth metal salt being 10 g or more when the (B) hydrate-formable alkaline earth metal salt is placed under a condition of 40 ° C. and 90% relative humidity for 24 hours; and
(III) a local maximum point existing in change of amount of water absorption of the (B) hydrate-formable alkaline earth metal salt while placed under a high-temperature and high-humidity condition.
US Pat. No. 10,334,835

METHOD FOR PREPARING AN OPTIMUM DENSITY TERMITE BAIT COMPOSITION

BASF Corporation, Florha...

1. A composition in extruded form for use for termite monitoring and control, said composition comprising a cellulose material as a base bait and an active ingredient for at least one of killing and controlling termites, said composition being compacted to a density of not less than 1.033 g/cc.
US Pat. No. 10,335,352

CREAM-TYPE HAIR COLORING AGENT

1. Agent for oxidative hair coloring, comprising, relative to the weight of the agent,from about 70-about 95 wt. % water,
at least one oxidation dye precursor,
at least one alkalizing agent,
at least one surfactant selected from anionic, zwitterionic and amphoteric surfactants and mixtures thereof, in a total amount of from about 0.1-about 2 wt. %,
at least one crosslinked copolymer, composed of acrylic acid and non-ethoxylated esters of acrylic acid with linear C10-C30-monoalcohols as monomers in a total amount of from about 0.05-about 2 wt. %,
at least one branched alkanol having a hydroxyl group and from about 10 to about 50 carbon atoms,
at least one linear, saturated 1-alkanol with a hydroxy group and from about 8 to about 22 carbon atoms in a total amount of from about 0.1-about 1.5 wt. %,
wherein
no additional fat components with a melting point of 35° C. or higher in addition to the obligatory ingredients mentioned above,
no saturated and unsaturated alkane carboxylic acids with from about 1 to about 50 carbon atoms and
no oxidants
are included in the agent, wherein
sodium polyacrylate is present in the agent.
US Pat. No. 10,336,890

RUBBER COMPOSITION FOR STUDLESS WINTER TIRES, AND STUDLESS WINTER TIRE

SUMITOMO RUBBER INDUSTRIE...

1. A studless winter tire, comprising:a cap tread formed from a rubber composition comprising
a rubber component,
bionanofibers,
carbon black and
silica,
the bionanofibers having an average fiber diameter of 4 nm to 20 nm,
the bionanofibers being cellulose microfibrils,
the rubber component having a combined amount of natural rubber and polybutadiene rubber of 60% to 100% by mass based on 100% by mass of the rubber component, an amount of the natural rubber of 30 to 70% by mass based on 100% by mass of the rubber component and an amount of the polybutadiene rubber of 30 to 70% by mass based on 100% by mass of the rubber component,
the rubber composition comprising the bionanofibers in an amount of 1 to 10 parts by mass relative to 100 parts by mass of the rubber component, the carbon black in an amount of 10 to 60 parts by mass relative to 100 parts by mass of the rubber component and the silica in an amount of 10 to 60 parts by mass relative to 100 parts by mass of the rubber component.
US Pat. No. 10,335,353

CREAM-TYPE HAIR COLORING AGENT III

1. Agent for oxidative hair dyeing comprising, relative to the weight of the agent:from about 70-about 86 wt. % water,
at least one oxidation dye precursor,
at least one alkalizing agent,
at least one crosslinked copolymer comprising acrylic acid and non-ethoxylated esters of acrylic acid with linear C10-C30 monoalcohols as monomers, wherein the crosslinked copolymer is included in a total amount of from about 0.01 about 0.3 wt. %,
at least one linear, saturated 1-alkanol with a hydroxy group and from about 8 to about 22 carbon atoms in a total amount from about 6-about 15 wt. %,
at least one anionic surfactant in a total amount of from about 1-about 6 wt. %,
at least one nonionic surfactant in a total amount of from about 0.5-about 3 wt. %, and
at least one polymer selected from cationic and zwitterionic polymers in a total amount of from about 0.1-about 2 wt. %,
wherein no oxidants are included wherein the agent for oxidative hair dyeing has a viscosity in the range of from about 104,000 to about 140,000 mPs, measured at 22° C. by employing a Brookfield rotational viscometer at a rotational frequency of 4 rpm with Spindle TC.
US Pat. No. 10,337,147

HIGHLY DISPERSIBLE HESPERALOE TISSUE

KIMBERLY-CLARK WORLDWIDE,...

1. A tissue product comprising from about 5 to about 50 percent, by weight of the product, high yield hesperaloe fibers, the tissue product having a geometric mean tensile (GMT) less than about 1,000 g/3?, a wet CD tensile greater than about 70 g/3? and a slosh box break up time less than about 100 seconds.
US Pat. No. 10,336,892

METALLOCENE CATALYZED POLYETHYLENE RESIN

1. A metallocene-catalyzed polyethylene resin comprising at least two metallocene-catalyzed polyethylene fractions A and B, wherein the polyethylene resin comprises:at least 25% to at most 42% by weight of polyethylene fraction A based on the total weight of the polyethylene resin, wherein fraction A has a melt index MI2 of at least 25.0 g/10 min as determined according to ISO 1133, condition D, at 190° C. and under a load of 2.16 kg, and a density at least 0.005 g/cm3 higher than the density of the polyethylene resin; and
wherein the polyethylene resin has a density of at least 0.938 g/cm3 to at most 0.949 g/cm3 as measured according to ASTM D-1505 at 23° C.; a melt index MI2 of at least 2.5 g/10 min to at most 25.0 g/10 min as determined according to ISO 1133, condition D, at 190° C. and under a load of 2.16 kg, and a molecular weight distribution Mw/Mn of at least 2.6 to at most 3.5, with Mw being the weight-average molecular weight and Mn being the number-average molecular weight.
US Pat. No. 10,337,148

HESPERALOE TISSUE HAVING IMPROVED CROSS-MACHINE DIRECTION PROPERTIES

KIMBERLY-CLARK WORLDWIDE,...

1. A tissue product comprising from about 5 to about 50 percent, by weight of the product, high yield hesperaloe fibers, the tissue product having a geometric mean tensile (GMT) less than about 1,000 g/3?, a CD stretch greater than about 10 percent and a Durability Index greater than about 38.0.
US Pat. No. 10,335,355

COSMETIC USE AS DEODORANT ACTIVE AGENT OF A SILICEOUS MATERIAL OBTAINED BY HYDROLYSIS AND CONDENSATION OF A TETRAALKOXYSILANE AND OF AN AMINOALKYL TRIALKOXYSILANE

1. A cosmetic process for treating human body odour and optionally human perspiration, which comprises applying to human keratin materials a siliceous material that may be obtained by hydrolysis and condensation, in the presence of water, oftetraethoxysilane (TEOS) compound (I)
and of at least one aminoalkyl trialkoxysilane of formula (II) below:
R2Si(OR3)3  (II)
in which:
R1 denotes a linear or branched C1-C4 alkyl group;
R2 denotes a linear or branched, saturated or unsaturated C2-C4 hydrocarbon-based group being substituted with an amino group NH2 or NHR with R denoting a linear or branched C1-C4 alkyl group;
R3 denotes a linear or branched C1-C4 alkyl group;
the said siliceous material being other than a molecularly imprinted polymer formed using a template molecule for the formation of cavities of the polymer, and wherein the compound (I)/compound of formula (II) weight ratio is 0.9/1 to 2/1.
US Pat. No. 10,337,149

HIGH STRENGTH AND LOW STIFFNESS HESPERALOE TISSUE

KIMBERLY-CLARK WORLDWIDE,...

1. A tissue product comprising from about 5 to about 50 percent, by weight of the product, high yield hesperaloe fibers, the tissue product having a geometric mean tensile (GMT) greater than about 1,000 g/3?, a CD stretch greater than about 10 percent, a Durability Index greater than about 38.0 and Stiffness Index less than about 7.0.
US Pat. No. 10,336,894

POLYPROPYLENE COMPOSITION COMPRISING NUCLEATING AGENT

SABIC GLOBAL TECHNOLOGIES...

1. A polypropylene composition comprising(A) a propylene-based polymer,
(B) talc, and
(C) a functionalized polypropylene grafted with an acid or acid anhydride functional group,
wherein components (A) and (C) are different,
wherein the amount of the talc in the composition is 0.025-4 wt % of the total composition and the amount of the functionalized polypropylene is 0.005-0.75 wt % of the total composition.
US Pat. No. 10,336,895

RUBBER BLEND COMPOSITION HAVING IMPROVED FREEZING RESISTANCE WITH FLUOROCARBON RUBBER AND METHOD OF PREPARING THE SAME

Hyundai Motor Company, S...

1. A rubber blend composition having improved freezing resistance, comprising:about 20 wt % to about 50 wt % of a fluorocarbon rubber having a radicalized end group on a fluoroalkylene backbone; and
about 50 wt % to about 80 wt % of a synthetic rubber.
US Pat. No. 10,335,615

ORAL CARE COMPOSITIONS AND METHODS OF USE

Colgate-Palmolive Company...

1. An oral care composition comprising:a. from 0.01% to 1% bisabolol, based on the total weight of the composition;
b. zinc oxide present in an amount of from 0.75 to 1.25 wt % and zinc citrate present in an amount of from 0.25 to 1.0 wt % based on the total weight of the composition;
c. from 0.01% to 1 zingerone, based on the total weight of the composition; and
d. a source of stannous ions, wherein the source of stannous ions is stannous fluoride in an amount of 0.1 wt. % to 2 wt. % based on the total weight of the composition.
US Pat. No. 10,335,359

HAIR FIXATIVES INCLUDING CELLULOSE ESTER BASED POLYGLUCOSE POLYMERS

AKZO NOBEL CHEMICALS INTE...

1. A hair fixative composition comprising:at least one carboxylated cellulose ester based polyglucose polymer obtained by reacting at least one cellulose ester with at least one non-aromatic cyclic anhydride and neutralizing the reaction product thereof;
an alcohol based solvent system, wherein the alcohol based solvent system comprises at least one C1-C6 straight or branched chain alcohol or mixtures thereof; and
at least one cosmetically acceptable additive;
wherein the at least one carboxylated cellulose ester polyglucose polymer is soluble in the alcohol based solvent system.
US Pat. No. 10,336,897

TAILORABLE VISCOELASTIC PROPERTIES OF PEG-HEMIAMINAL ORGANOGEL NETWORKS

International Business Ma...

1. A hemiaminal organogel, comprising:a plurality of polymer chains, each having an ? end and an ? end; and
a plurality of aminal-hemiaminal linkages, wherein a first portion of the plurality of polymer chains is each covalently bonded to a first aminal-hemiaminal linkage at the ? end and a second aminal-hemiaminal linkage at the ? end, and a second portion of the plurality of the polymer chains is each covalently bonded to a first aminal-hemiaminal linkage at the ? end and non-covalently bonded to a second aminal-hemiaminal linkage at the ? end.
US Pat. No. 10,334,848

METHODS AND COMPOSITIONS FOR WEED CONTROL USING EPSPS POLYNUCLEOTIDES

Monsanto Technology LLC, ...

1. A method of controlling growth, development or reproductive ability of a plant, comprising: topically treating the plant with a composition comprising a double-stranded RNA (dsRNA) polynucleotide and a transfer agent, wherein the dsRNA polynucleotide comprises (a) a strand consisting of SEQ ID NO: 3 or 5; and (b) a strand comprising the reverse complement of (a), whereby the growth, development or reproductive ability of the plant is reduced, relative to a plant not treated with the composition.
US Pat. No. 10,335,360

DISPOSABLE TOOTHBRUSH HAVING TOOTHPASTE COMPOSITION BONDED TO BRISTLES THEREOF

1. A method of bonding a flavored toothpaste composition to a substrate in the absence of a metal graft initiator, peroxide catalyst, or a combination thereof, comprising the steps of:providing a toothbrush having bristles comprising the substrate;
bonding a monomer/prepolymer to the substrate;
adding a flavoring to the monomer/prepolymer by chemical bonding;
adding a physical cross-linking polymer with the bonded monomer/prepolymer; and
drying the toothbrush containing the flavored toothpaste composition.
US Pat. No. 10,336,898

PROCESS FOR STABILIZING PHENOLIC RESINS CONTAINING CALIXARENES

SI GROUP, INC., Schenect...

1. A stabilized phenolic resin prepared by the process comprising:contacting, in a one-step process, a phenolic resin containing a mixture of linear phenolic resins and calixarenes, with an alkylene carbonate, in the presence of a base catalyst, to at least partially alkoxylate the phenolic hydroxyl groups of the calixarenes, thereby forming a stabilized phenolic resin mixture,
wherein about 0.2 to 1 mole of alkylene carbonate reacts with the phenolic hydroxyl groups for each mole of the phenolic resin.
US Pat. No. 10,334,850

RECOMBINANT MICROORGANISM EXPRESSING AVERMECTIN ANALOGUE AND USE THEREOF

Zhejiang Hisun Pharmaceut...

1. A recombinant Streptomyces expressing tenvermectin A or tenvermectin B, wherein the recombinant Streptomyces (1) has an inactivated or activity-decreased aveD gene, has an inactivated or activity-decreased aveAI gene, and has a functional milAI gene; or
(2) has an inactivated or activity-decreased aveAI gene, and has a functional milAI gene.
US Pat. No. 10,335,363

SKIN CARE COMPOSITION AND METHOD OF MAKING THE SAME

1. A topical skin care composition, comprising:a. an effective amount of an achachairu serum fraction wherein the achachairu serum fraction is obtained from achachairu juice that is processed to have a dry matter content of less than 25%, by weight of the serum fraction; and
b. a dermatologically acceptable carrier.
US Pat. No. 10,336,901

POLYCARBONATE COMPOSITIONS, METHODS OF THEIR MANUFACTURE, AND ARTICLES THEREOF

SABIC Global Technologies...

1. A polycarbonate composition comprising, based on the total weight of the polycarbonate composition,50 to less than 90 wt. % of a linear polycarbonate comprising bisphenol A carbonate units,
10 to less than 50 wt. % of a branched polycarbonate comprising bisphenol A carbonate units,
0.01 to 2 wt % of sodium dodecylbenzenesulfonate,
0.1 to 0.8 wt % of a linear phenyl-containing siloxane, and
0.1 to 0.8 wt % of a cyclic siloxane,
wherein the polycarbonate composition is free of perfluoroalkane sulfonate alkali metal salts, perfluoroalkane sulfonate C1-C6 alkylammonium salts, and perfluoroalkane sulfonate ammonium salts, and
wherein the polycarbonate composition has a flammability rating of V0 measured according to the UL 94 Vertical Burning Test at a thickness of 3 millimeters; and
the polycarbonate composition has a transmission of 85% or more and a haze of 3% or less, measured according to ASTM D1003 using the color space CIE1931 (Illuminant C and a 2° observer) at a thickness of 3 mm, and
an article molded from the polycarbonate composition with dimensions of 12.7 mm×127 mm and a thickness of 3.2 mm has no bubbles visible to unassisted eyes,
provided that the sum of the weight percent of the linear polycarbonate, the branched polycarbonate, sodium dodecylbenzenesulfonate, linear phenyl-containing siloxane; and cyclic siloxane does not exceed 100%.
US Pat. No. 10,335,364

COMPOSITION FOR TOPICAL APPLICATION COMPRISING GLYCEROL AND TANNINS

1. A method of improving the mechanical resistance and enhancing the retention time of a filmogen glycerol film over live cells which keeps the film intact over the live cells comprising mixing glycerol with a plant tannin which has the capacity to bind to glycerol molecules to form a solution and applying the solution to the live cells, wherein the plant is selected from the group consisting of Vaccinium myrtillus, Vaccinium macrocarpon, Vitis vinifera, European elder, Camellia sinensis, Glycine max, Acacia catechu, Fraxinus chinensis, Gingko biloba, Ribes nigrum, Tenacetum parthenium, Salix alba, Salvia officinalis, Rosmarinus officinalis, an Opuntia sp., Moms alba, a Rubus sp, a Quercus sp., a Pinus sp., and Rheum emodi.
US Pat. No. 10,336,647

HOLMIUM-BASED CONTRAST ENHANCING UV BLOCKING GLASS COMPOSITIONS

Corning Incorporated, Co...

1. A UV-blocking glass material comprising precipitated cuprous halide crystals and comprising by weight percent, on an oxide basis:from greater than or equal to 30 wt % to less than or equal to 65 wt % SiO2;
from greater than or equal to 12 wt % to less than or equal to 25 wt % B2O3;
from greater than or equal to 3 wt % to less than or equal to 10 wt % Al2O3;
from greater than or equal to 0 wt % to less than or equal to 7 wt % Na2O;
from greater than or equal to 0 wt % to less than or equal to 10 wt % K2O;
from greater than or equal to 0 wt % to less than or equal to 5 wt % Li2O;
from greater than or equal to 0.5 wt % to less than or equal to 10 wt % Ho2O3;
from greater than or equal to 0.25 wt % to less than or equal to 1.50 wt % CuO; and
from greater than or equal to 0.5 wt % to less than or equal to 5.0 wt % halogens.
US Pat. No. 10,336,903

POLYAMIDE BASED COMPOSITION CONTAINING POLYKETONE AND RUBBER

RHODIA OPERATIONS, Auber...

1. A polyamide composition, consisting of:at least one polyamide;
at least one polyketone, in an amount of 1 to 4 wt %, based on the total weight of the composition;
at least one rubber in an amount of 10 to 35 wt %, based on the total weight of the composition; and
optionally, one or more further components selected from the group consisting of fibrous fillers, particulate fillers, heat stabilizers, anti-oxidants, plasticizers, lubricants, colorants, pigments, antistatic agents, flame-retardant agents, nucleating agents, and catalysts.

US Pat. No. 10,341,951

METHOD FOR COMMUNICATING ENCODED TRAFFIC INDICATION MAP INFORMATION

KT Corporation, Seongnam...

1. A method for processing a beacon frame by a terminal in a wireless local area network, the method comprising:receiving, by the terminal from an access point (AP), the beacon frame including a traffic indication map (TIM), a first bitmap and one or more second bitmap,
wherein:
the TIM is based on a hierarchical structure that a page includes a plurality of blocks and a block includes a plurality of sub-blocks, and
the first bitmap indicates presence of buffered data for each of one or more blocks, a second bitmap indicates presence of buffered data for each of one or more sub-blocks, and a sub-block indicates whether there is data for each of one or more terminals; and
decoding the one or more blocks when the first bitmap indicates that there is a buffered data at the AP for the terminal.

US Pat. No. 10,341,889

SENSOR NETWORK EVALUATION METHOD

King Fahd University of P...

1. A method of operating a computer system to determine the performance of a wireless sensor network including one or more sensors, the method comprising:selecting, a sensor distribution pattern for a geographical region where the sensors of the wireless sensor network are to be deployed;
determining a location for a base station in the geographical region;
generating by circuitry, a plurality of sensor clusters each sensor cluster having a cluster head and a plurality of sensors, wherein each cluster head is wirelessly connected to the base station, and wherein each sensor cluster of the plurality of sensor clusters being formed by one of a first grouping mechanism and a second grouping mechanism, the first grouping mechanism forming the sensor cluster based on a strength of a signal transmitted by each sensor, that is received by the base station, and the second grouping mechanism forming the sensor cluster based on a location of the sensor and an energy level of the sensor,
computing by the circuitry, for the second grouping mechanism, an average sensor energy corresponding to the sensors in the geographical region; and
generating a non-cluster sensor group including sensors that have energy lower than the computed average sensor energy; and forming the sensor clusters based on a simulated annealing algorithm;
allocating, for each sensor included in the generated sensor cluster, a time-slot within a time-frame corresponding to the sensor cluster, the time-slot being utilized for transmitting a data packet from the sensor to the base station; and
evaluating by the circuitry, the performance of the first grouping mechanism and the second grouping mechanism for the selected sensor distribution pattern and base station location, by computing at least a ratio of delivered data packets to the base station to a total energy consumption, and a first delay and a second delay incurred by each data packet,
wherein the sensor distribution pattern is a grid pattern wherein the sensors are disposed in a manner such that a distance between adjacent sensors is a predetermined distance, in a normal distribution pattern a principle number of sensors are disposed in the center of the geographical region, and in an exponential distribution pattern, a principle number of sensors are disposed in the corner of the geographical region.

US Pat. No. 10,341,878

CONNECTION TECHNOLOGY-BASED WIRELESS COVERAGE VERIFICATION

T-Mobile USA, Inc., Bell...

8. A computer-implemented method comprising:determining, by one or more servers associated with a telecommunications service provider, aggregated data associated with connection efforts of a plurality of devices;
determining, by the one or more servers, a first number of successful connection efforts wherein individual devices of the plurality of devices successfully established connections with the telecommunications service provider via a technology level available in a first area and for the device, the first area corresponding to a geographical location;
determining, by the one or more servers, a second number of successfully established connections with the telecommunications service provider via a lower technology level than what is available in the first area and for the device;
determining, by the one or more servers, that coverage associated with the first area is verified based at least in part on:
(i) determining that the first number is above a threshold number in the first area; and
(ii) determining, by the one or more servers, that the first number is greater than the second number in the first area;
determining, by the one or more servers, first coverage data indicating that coverage associated with the first area is verified coverage; and
generating, by the one or more servers and based at least in part on the first coverage data, a user interface to graphically represent the coverage in the first area via a first coverage map based at least in part on including a graphical element corresponding to the first area indicating that the coverage associated with the first area is verified coverage.

US Pat. No. 10,341,844

METHOD AND APPARATUS FOR IMPLEMENTING VIRTUAL COMMUNICATION CARD

ZTE CORPORATION, Shenzhe...

1. A method for implementing a virtual communication card, being applied to a terminal device and comprising:resolving a data file prestored locally to obtain communication card information carried in the data file;
loading the data file when the communication card information obtained from the data file is determined to be matched with communication card information to be used that is input by a user; and
when the data file is determined to be in an unregistered state, activating the data file so that the data file is used as a virtual communication card, wherein the communication card information obtain from the data file is communication card information of the virtual communication card;
wherein after the step of loading the data file, the method further comprises:
sending a registration request carrying the communication card information obtained from the data file; and
determining that the data file is in an unregistered state after receiving a successful response to the registration request;
wherein the sending the registration request carrying the communication card information obtained from the data file comprises:
in the case that it is determined that there exists a loaded data file, comparing the data file with the loaded data file, and sending the registration request carrying the communication card information obtained from the data file when it is determined that the data file and the loaded data file are of different types.

US Pat. No. 10,341,840

INFORMATION PROCESSING METHOD, COMMUNICATION NODE AND COMPUTER STORAGE MEDIUM

ZTE Corporation, Shenzhe...

1. An information processing method, comprising:receiving, by a first Device-to-Device User Equipment (D2D UE), bearer control information sent by a first evolved Node B (eNB), wherein the bearer control information comprises bearer handover decision parameter information used to determine whether the first D2D UE is allowed to be changed to a second access node for communication data transmission; and
changing, by the first D2D UE, to the second access node according to the bearer control information for communication data transmission;
wherein the first eNB is a first access node, and the second access node is D2D relay node;
wherein changing, by the first D2D UE, to the second access node according to the bearer control information for communication data transmission comprises:
measuring, by the first D2D UE, signals sent by a serving cell to form a measurement result; and
comparing the measurement result with the bearer handover decision parameter information to determine whether to change to the second access node for communication data transmission.

US Pat. No. 10,341,839

METHOD AND APPARATUS FOR MAINTAINING MISSION CRITICAL FUNCTIONALITY IN A PORTABLE COMMUNICATION SYSTEM

MOTOROLA SOLUTIONS, INC.,...

1. A method for operating a portable communication system, comprising:tethering an accessory to a portable handset;
operating the accessory as a primary device and the handset as a secondary device, wherein mission critical user interface features of the primary device comprising PTT, emergency, and transmit/receive (TX/RX) audio are controlled by a mission critical processor of the primary device, while the PTT and emergency are controlled by both the mission critical processor and a main application processor of the primary device;
monitoring, by a watchdog timer of the primary device, for a status change indicating one or more fault conditions comprising:
a fault at the mission critical processor of the primary device; and
a battery depletion fault of the primary device;
triggering, in response to the status change, a handover of control from the mission critical processor of the primary device to the secondary device, thereby maintaining the mission critical user interface features at the primary device while under the control of the secondary device.

US Pat. No. 10,341,838

METHOD TO PROVIDE AD HOC AND PASSWORD PROTECTED DIGITAL AND VOICE NETWORKS

AGIS Software Development...

1. A method performed by one or more servers each having one or more processors, the method comprising:executing operations on the one or more processors, the operations comprising:
obtaining first data provided by a first mobile device corresponding to a vehicle, the first data including a first identifier;
permitting the first mobile device corresponding to the vehicle to join a communication network, the permitting based on a determination regarding the first data;
obtaining second data provided by a second mobile device corresponding to a participant, the second data including a second identifier associated with the participant;
allowing the second mobile device corresponding to the participant to join the communication network, the allowing based on a determination regarding the second data;
receiving vehicle location data provided by the first mobile device corresponding to the vehicle, wherein the vehicle location data are associated with the first identifier and indicate coordinates of a geographical location of the first mobile device;
receiving participant location data provided by the second mobile device corresponding to the participant, wherein the participant location data are associated with the second identifier and indicate coordinates of a geographical location of the second mobile device;
sending participant data to the second mobile device corresponding to the participant, wherein the participant data comprise the vehicle location data, wherein the second mobile device corresponding to the participant is configured to (1) determine coordinates of a position on the participant map corresponding to the coordinates of the geographical location of the second mobile device, (2) display the participant map, and (3) place a first symbol on the participant map at the determined coordinates of the position on the participant map corresponding to the coordinates of the geographical location of the second mobile device;
sending vehicle data to the first mobile device corresponding to the vehicle, wherein the vehicle data comprise the participant location data, wherein the first mobile device corresponding to the vehicle is configured to (1) determine coordinates of a position on the vehicle map corresponding to the coordinates of the geographical location of the first mobile device, (2) display the vehicle map, and (3) place a second symbol on the vehicle map at the determined coordinates of the position on the vehicle map corresponding to the coordinates of the geographical location of the first mobile device;
receiving participant selection data provided by the second mobile device corresponding to the participant, the participant selection data corresponding to user input provided via a display of the second mobile device;
based on the participant selection data, performing one or more acts selected from the group consisting of: sending updated vehicle data to the first mobile device corresponding to the vehicle, sending updated participant data to the second mobile device corresponding to the participant, and sending a message to the first mobile device corresponding to the vehicle;
receiving entity-of-interest data transmitted by the second mobile device, the entity-of-interest data comprising coordinates of a geographical location of a new entity of interest, wherein the second mobile device is configured to (1) identify participant interaction with a display of the second mobile device, the participant interaction indicating selection of a position on the participant map and entry of the new entity of interest at the selected position, (2) display an entity symbol representing the new entity of interest at the selected position on the participant map, (3) determine coordinates of a geographical location of the new entity of interest based on coordinates of the selected position on the participant map, and (4) transmit the entity-of-interest data; and
sending the entity-of-interest data to the first mobile device corresponding to the vehicle, wherein the first mobile device is configured to place the entity symbol representing the new entity of interest on the vehicle map at a position on the vehicle map corresponding to the geographical location of the new entity of interest.

US Pat. No. 10,341,836

SYSTEM AND METHOD FOR REPORTING AND TRACKING INCIDENTS

1. A system for incident reporting, the system comprising:a memory;
a processor; and
at least one first application stored in the memory and executable by the processor for:
providing a graphical user interface for use on a mobile device for reporting an undergoing incident, the mobile device connected to a network;
receiving from the mobile device, via the graphical user interface, a request for reporting the incident;
in response to receiving the request, activating a media capture device provided on the mobile device and causing the media capture device to record media related to the incident while the incident is occurring;
receiving incident data from the mobile device in real-time while the incident is occurring, the incident data comprising the recorded media,
determining from the incident data at least one organization the incident is to be reported to, and
transmitting the incident data to the at least one organization.

US Pat. No. 10,341,835

BLUETOOTH MICROPHONE

1. A Bluetooth microphone comprising:a transducer arranged to provide an electronic representation of an acoustic signal;
an analog-to-digital converter for converting said electronic representation into a digital signal;
a codec for producing a sequence of packets based on said digital signal;
a decoder for converting a received sequence of packets into a digital stereo signal;
a digital-to-analog converter for converting said digital stereo signal into a stereo analog signal suitable for transmission to a set of headphones; and
a controller and Bluetooth transceiver arranged to:
establish a Bluetooth paired connection with a device;
establish an Advanced Audio Distribution Profile, A2DP, connection with the paired device to receive said sequence of packets for said decoder from said device; and
establish a Serial Port Profile, SPP, connection with the paired device for simultaneously transmitting said produced sequence of packets based on said digital signal to said paired device as said received sequence of packets are being decoded for transmission to said set of headphones.

US Pat. No. 10,341,834

MOBILE TERMINAL AND METHOD FOR CONTROLLING THE SAME

LG ELECTRONICS INC., Seo...

1. A mobile terminal, comprising:a short range communication module;
a touch screen having an indicator area that displays information about a state of the mobile terminal; and
a controller configured to:
display a graphical object that indicates whether the short range communication module is activated in the indicator area,
display information about a connected device to which a connection to the short range communication module is set based on a user input in the indicator area having a displacement change in a first reference direction,
display information about one or more connectable devices that can connect to the short range communication module when a displacement magnitude of the user input is larger than a first reference distance, and
control a predetermined function using the short range communication module when a direction of the user input satisfies a second reference direction in the indicator area,
wherein the controller is further configured to:
display the information about the connected device to which the connection to the short range communication module is set with graphical objects associated with multiple devices, and
when a user multi-input to select the graphical objects simultaneously is received, execute functions of the multiple devices and display multiple execution screens according to the selected graphical objects associated with the multiple devices.

US Pat. No. 10,341,832

COOPERATIVE SYSTEM, INFORMATION PROCESSING DEVICE, COOPERATION METHOD, AND COOPERATIVE PROGRAM

Konica Minolta, Inc., To...

1. A cooperative system comprising an information processing device and a portable device carried by a user, whereinthe information processing device includes:
a display that displays an image;
a position detector that detects a position on a display surface of the display with which an object has made contact; and
a hardware processor that:
detects the portable device in response to the position detector detecting that the portable device is placed on the display surface;
establishes a communication path with the portable device;
switches an independent mode not cooperating with the portable device to a cooperation mode cooperating with the portable device when a communication path with the portable device is established and the portable device is detected by the hardware processor; and
displays a related image that is related to the portable device on the display in response to the hardware processor detecting that the portable device is removed from the display surface and the communication path is still established.

US Pat. No. 10,341,830

METHOD AND APPARATUS FOR SENDING OR FORWARDING INFORMATION

ZTE CORPORATION, Shenzhe...

1. A method for sending information, which is applied to a Machine-to-Machine (M2M) communication system and comprises:sending, by a sending device, to-be-sent information to a target device through a communication network, wherein the to-be-sent information carries one of the following specified identities (IDs): a first ID, which is used for identifying the target device outside the communication network, and a second ID, which is used for identifying the target device inside the communication network;
acquiring, by the sending device, a recognizable ID corresponding to the specified ID through the communication network; and
sending, by the sending device, the to-be-sent information to the target device through the communication network according to the recognizable ID;
wherein the to-be-sent information is sent in a form of IP packet;
wherein the first ID contains two parts: a service ID or an application ID, and a device ID;
wherein after sending the to-be-sent information to the target device, the target device forwards the information to a target M2M service element according to the content of the information, wherein the target M2M service element is configured to process the information according to the content of the information.

US Pat. No. 10,341,828

GFI TRIPPED-CIRCUIT DETECTION AND NOTIFICATION SYSTEM

1. A device for plugging into a standard wall outlet that is protected by a Ground Fault Circuit Interrupter (GFCI) and for facilitating detection of a GFCI trip using a door/window sensor of a security system, the device comprising:a plug, the plug configured to plug into an outlet, wherein the outlet is protected by the GFCI;
an electromagnet, the electromagnet powered by the outlet when the plug is plugged into the outlet, and wherein the electromagnet is automatically powered off when the GFCI trips, the electromagnet configured to be located proximate the window/door sensor of the security system for detecting when the electromagnet is powered off, wherein the window/door sensor is configured to signal an absence of an electromagnetic field near the window/door sensor.

US Pat. No. 10,341,827

METHOD AND APPARATUS FOR DELIVERY OF APPLICATION SERVICES

1. A device, comprising:a processing system including a processor, wherein the processing system corresponds to a network element of a cellular network that provides cellular services to a plurality of mobile devices; and
a memory storing executable instructions that, when executed by the processing system, perform operations comprising:
receiving a request for a streaming video application service from a mobile device included in the plurality of mobile devices;
identifying a wireless access point from a list of wireless access points according to a proximity of the wireless access point to the mobile device, wherein the list of wireless access points identifies a service provider of the wireless access point; and
responsive to determining that the service provider of the wireless access point is a same service provider as a service provider of the cellular network providing the streaming video application service and in response to a determination that the wireless access point is in a communication range of the mobile device based on the proximity of the wireless access point to the mobile device:
selectively initiating a communication session between the mobile device and the wireless access point according to a network condition associated with the wireless access point or the cellular network; and
selectively redirecting an application server to deliver the streaming video application service over the wireless access point rather than by way of the cellular network according to the network condition.

US Pat. No. 10,341,825

SYSTEM AND METHOD FOR AUDIBLE TEXT CENTER SUBSYSTEM

GENESIS STAR MANAGEMENT L...

1. A method performed by a computing system, the method comprising:receiving, by the computing system, a text message, the text message associated with a recipient identification of a recipient of the text message;
receiving, by the computing system, preference information for converting the text message to speech data defining speech, the preference information indicating by default a default preference that the text message is not to be converted to the speech data, the preference information changeable to indicate a user-indicated preference of whether the text message is to be converted to the speech data;
overriding, by the computing system, the default preference that the text message is not to be converted to the speech data to a preference that the text message is to be converted to the speech data based on a location of the recipient;
converting, by the computing system, the text message to the speech data based on the preference information indicating that the text message is to be converted to the speech data; and
outputting, by the computing system, the speech defined by the speech data to the recipient using a speaker.

US Pat. No. 10,341,824

METHOD FOR REAL-TIME AUTHORIZATION WITHIN A PUSH TO TALK FOR THE INTERNET OF THINGS SYSTEM

MOTOROLA SOLUTIONS, INC.,...

1. An apparatus comprising:logic circuitry configured to:
receive a talkgroup identification;
map the talkgroup identification to an Internet-of-Things (IoT) device;
receive an identification of a user;
determine if the user has authorization to operate the IoT device;
determine an authorized user of the IoT device;
cause a device associated with the authorized user to be added to a talkgroup associated with the IoT device;
receive authorization from the device associated with the authorized user;
determine a control command based on the IoT device; and
a network interface coupled to the logic circuitry, the network interface configured to output the control command to operate the IoT device.

US Pat. No. 10,341,822

BROADCAST DELIVERY SYSTEM, GATEWAY DEVICE, BROADCAST DELIVERY METHOD AND STORAGE MEDIUM

NEC CORPORATION, Minato-...

1. A broadcast delivery system, comprising:a home base station configured to communicate wirelessly with a terminal by using one cell;
a gateway device configured to relay data that the home base station transmits and receives with a core network;
a wireless network control device connected to the gateway device; and
a broadcast delivery device configured to transmit, to the wireless network control device, a broadcast delivery message addressed to the terminal connected to the home base station,
wherein the gateway device manages an operating state of the home base station and controls broadcast delivery to the terminal, using a service area comprising at least one or more cells formed by the home base station as a unit,
wherein the gateway device associates a new home base station with a service area to which the new home base station belongs to register on a first management table when the new home base station transitions to an enabled state, and
wherein the gateway device, in a case of receiving a location information registration request message from the new home base station, notifies the wireless network control device that the service area to which the new home base station belongs has become enabled when the location information registration request message has not been received from another home base station in the service area to which the new home base station belongs.

US Pat. No. 10,341,821

BASE STATION AND TRANSMISSION METHOD

PANASONIC INTELLECTUAL PR...

1. A base station comprising:determination circuitry which, in operation, determines that each subframe of a shared area is used to perform multicast transmission or is used to perform inter-cell interference coordination based on presence or absence of transmission data to be transmitted in each subframe of the shared area, the shared area being configured to have subframes used to perform both multicast transmission and inter-cell interference coordination among a plurality of Multicast-Broadcast Single Frequency Network (MBSFN) subframes; and
communication circuitry which, in operation, performs a transmission process in the shared area according to a determination result of the determination circuitry.

US Pat. No. 10,341,820

TECHNIQUES FOR MODULAR MULTIMEDIA BROADCAST AND MULTICAST SERVICE (MBMS) DELIVERY

QUALCOMM Incorporated, S...

1. A method for multimedia broadcast and multicast service (MBMS) operations in a wireless communication system, comprising:receiving, at a network device, a request for activation of a service from an application server, wherein the request for activation corresponds to at least one or more MBMS service delivery functionalities offered by the network device;
determining, at the network device, that the application server is authorized for the at least one or more MBMS service delivery functionalities, wherein the at least one or more MBMS service delivery functionalities are a subset of the MBMS service delivery functionalities supported by the network device, wherein determining that the application server is authorized for the at least one or more MBMS service delivery functionalities requested by the application server comprises:
identifying a service identification (ID) in the request for activation of the service, wherein the service ID specifies a first MBMS service delivery functionality of the MBMS service delivery functionalities supported by the network device to be included in the activation of the service; and
determining whether the service ID corresponds to one or more MBMS service delivery functionalities authorized for the application server based on an agreement between a network operator and an operator of the application server; and
allocating a temporary mobile group identity (TMGI) to the application server in response to a determination that the application server is authorized.

US Pat. No. 10,341,819

VERIFYING SENSOR DATA USING EMBEDDINGS

Uber Technologies, Inc., ...

1. A method for verifying a trip for a user and a trip provider, the method comprising:receiving, from a client device, data associated with sensor information of the client device and associated with a trip record, the trip record being associated with the trip for the user and the trip provider, the data including (i) a data sample for a set of sensors of the client device and (ii) one or more characteristics of the data sample;
generating a test embedding for the data sample, the test embedding using a plurality of latent dimensions that represent at least a portion of the data sample;
identifying a reference embedding for a set of reference characteristics, the set of reference characteristics corresponding to at least one of the one or more characteristics of the data sample, the reference embedding being based on a set of embeddings each using the plurality of latent dimensions that represent sensor data for a set of trip records different than the trip record, the set of trip records being associated with the set of reference characteristics;
determining a similarity score between the test embedding corresponding to the trip record and the reference embedding by comparing each latent dimension of the test embedding and a corresponding latent dimension of the reference embedding; and
in response to determining that the similarity score is less than a threshold score, determining that the data sample indicates that the trip provider and the user did not travel together along at least a portion of a route of the trip.

US Pat. No. 10,341,818

INITIAL ACCESS OF WIRELESS ACCESS NETWORK USING ASSISTANCE INFORMATION

BlackBerry Limited, Wate...

1. A device comprising:a wireless transceiver;
at least one processor; and
a non-transitory storage medium storing instructions executable on the at least one processor to:
send, using the wireless transceiver, first information to a service, the first information comprising location information of the device and a speed of the device;
receive, from the service through the wireless transceiver, assistance information that is based on the first information comprising the location information and the speed of the device;
perform initial access of a selected wireless access network using the assistance information, and as part of performing the initial access:
determine whether one or more of a radio access technology, a frequency band, and a carrier frequency previously used by the device is available;
in response to determining that the one or more of the radio access technology, the frequency band, and the carrier frequency previously used by the device is available, access a first wireless access network based on the one or more of the radio access technology, the frequency band, and the carrier frequency previously used by the device, and
in response to determining that the one or more of the radio access technology, the frequency band, and the carrier frequency previously used by the device is not available, perform initial access of a second wireless access network using the assistance information to achieve power saving at the device; and
transmit, using the wireless transceiver over the selected wireless access network, second information to the service.

US Pat. No. 10,341,816

METHOD AND APPARATUS OF RECOGNIZING LOCATION OF USER DEVICE

LOPLAT CO., LTD., Gangna...

1. A method of recognizing a location of a user device, comprising:receiving a device signal fingerprint from the user device;
calculating similarities between the device signal fingerprint and reference signal fingerprints collected inside a store and stored in a database in association with store information;
setting a reference value for determining the inside or the outside of the store; and
determining whether the user device is located inside or outside the store on the basis of the similarities, wherein the similarity and the reference value are compared and if the similarity is equal to or higher than the reference value, the user device is determined as being inside the store.

US Pat. No. 10,341,815

CHARGE ROOM LOCATIONING

Symbol Technologies, LLC,...

1. A method of locationing a mobile device in a charge location in a venue, the method comprising:receiving, from the mobile device at the venue, a charge signal indicating external charging of the mobile device and/or a characteristic of the charge location at the venue;
determining that the mobile device is at the charge location based on the charge signal and/or on the characteristic of the charge location at the venue; and
outputting a locationing status associating the mobile device with the charge location,
wherein the characteristic of the charge signal is received in response to detection of an external power source via a charging dock into which the mobile device is inserted, and
wherein the characteristic of the charge location is an angle of orientation of the charging dock.

US Pat. No. 10,341,813

ANONYMIZING LOCATION DATA

International Business Ma...

1. A computer-implemented method for providing location information, the method comprising:receiving, by a user device from an application server, a request for a location of the user device;
defining a geographic cell having a physical area based on a designated location corresponding to an application option setting selected for an application associated with the application server;
identifying a set of available participating mobile devices to which the request for the location can be redirected that are currently physically located within the geographic cell;
selecting a participating mobile device from among the set of available participating mobile devices; and
routing the location request to the selected participating mobile device via an address associated with the selected participating mobile device.

US Pat. No. 10,341,810

GEOLOCATION COMPATIBILITY FOR NON-RCS DEVICES

T-Mobile USA, Inc., Bell...

12. A method, comprising:receiving an RCS (rich communication services) message, the RCS message specifying a location and a user identifier;
identifying a first communication device and a second communication device that are associated with the user identifier;
receiving an error message from the first communication device in response to an RCS communication with the first communication device;
determining that the first communication device does not support RCS geolocation messages in response to at least one of receiving the error message or by referencing a recorded capabilities list storing capabilities of the first communication device;
extracting the location from the RCS message;
constructing a location message that specifies the location; and
sending the location message as a short messaging service (SMS) message or as a multimedia messaging service (MMS) message, wherein sending the location message as the SMS message or as the MMS message to the first communication device causes the first communication device to automatically present a graphical map.

US Pat. No. 10,341,809

LOCATION SHARING WITH FACILITATED MEETING POINT DEFINITION

X One, Inc., Union City,...

1. A method of tracking proximity of position of a first wireless device to position of a second wireless device, wherein the first wireless device and the second wireless device are each a GPS and web-enabled cell phone, the method comprising:providing an application for download via the Internet to the first wireless device;
via at least one server,
intermittently receiving GPS position updates from each of the first wireless device and the second wireless device,
providing the first wireless device with position of the second wireless device and a map, wherein the map is selected dependent on the position of the first wireless device and the position of the second wireless device and proximity of the first wireless device to the second wireless device,
receiving meeting information for a user of the first wireless device and a user of the second wireless device, including
permitting the user of the first wireless device to enter the meeting point via the application, and transmitting identification of the meeting point to the second wireless device, and
permitting the user of the first wireless device to change the meeting point by dragging and dropping the meeting point to select an updated meeting point location, and
transmitting the updated meeting point location to the second wireless device; and
via the application, causing update of display of the map on the first wireless device to show the updated meeting point location, with updated position of the first wireless device and updated position of the second wireless device rendered thereon;
wherein said providing the first wireless device with the position and the map and said receiving of the meeting information are invoked responsive to launching the application on the first wireless device, and are conditioned on registration of the web-enabled cell phone and supply of payment information.

US Pat. No. 10,341,807

DIFFERENTIATED POSITIONING

Telefonaktiebolaget LM Er...

1. A method performed by a wireless device in a communication network providing a first type of positioning information, the method comprising:requesting a second type of positioning information from the network, the second type of positioning information being different from the first type of positioning information;
obtaining information from the network in response to the request, which information is valid for a predefined period of time and which information enables the wireless device to obtain the second type of positioning information only during the predefined period of time, the obtained information being different from the second type of positioning information; and
performing one of positioning and assisting performance of positioning based on the obtained second type of positioning information, the second type of positioning information enabling positioning with a higher accuracy than the positioning enabled by the first type of positioning information.

US Pat. No. 10,341,806

METHOD AND APPARATUS FOR TRANSMITTING AND RECEIVING SYSTEM INFORMATION

KT CORPORATION, Gyeonggi...

1. A method of transmitting system information by a base station, the method comprising:configuring a system bandwidth including two or more physical resource blocks with one or more subbands defined by two or more physical resource blocks to enable at least one remaining physical resource block to be located in a center of the system bandwidth; and
transmitting the system information to a predetermined user equipment (UE) using the subband,
wherein the subband is defined by six physical resource blocks; and
wherein:
when the system bandwidth is 3 MHz and 5 MHz, the system bandwidth is configured with 2 subbands and 4 subbands, respectively, and a number of remaining physical resource blocks is 3 and 1, respectively;
when the number of remaining physical resource blocks is 1, the remaining physical resource block is located in the center of the system bandwidth; and
when the number of remaining physical resource blocks is an odd number greater than 1, at least one of the remaining physical resource blocks is located in the center of the system bandwidth.

US Pat. No. 10,341,798

HEADPHONES THAT EXTERNALLY LOCALIZE A VOICE AS BINAURAL SOUND DURING A TELEPHONE CELL

1. A method executed by headphones to externally localize a voice of a person during a telephone call to a user wearing the headphones, the method comprising:storing, in a memory of the headphones, head-related transfer functions (HRTFs) of the user wearing the headphones;
receiving, at a network interface of the headphones and during the telephone call between the person and the user, a wireless transmission that includes the voice of the person in mono sound or stereo sound;
tracking, during the telephone call, head movements of the user with at least one of an accelerometer, a gyroscope, and a magnetometer in the headphones;
processing, with a digital signal processor (DSP) in the headphones and during the telephone call, the voice of the person with the HRTFs selected based on the head movements of the user in order to change the voice of the person from the mono sound or the stereo sound into binaural sound and to maintain external localization of the voice at a sound localization point (SLP) in empty space at least one meter away from a head of the user while the head of the user moves with respect to the SLP;
providing, through speakers in the headphones and during the telephone call, the voice of the person processed with the HRTFs such that the voice of the person externally localizes at the SLP in empty space at least one meter away from the head of the user while the head of the user moves with respect to the SLP;
receiving, at an interface of the headphones during the telephone call, a command from the user to change the voice of the person from externally localizing at the SLP as the binaural sound to internally localizing as one of the mono sound or the stereo sound; and
providing, through the speakers in the headphones, the voice of the person in the mono sound or the stereo sound in response to receiving the command during the telephone call to change the voice of the person from externally localizing at the SLP as the binaural sound to internally localizing as the mono sound or the stereo sound.

US Pat. No. 10,341,797

SMARTPHONE PROVIDES VOICE AS BINAURAL SOUND DURING A TELEPHONE CALL

1. A method executed by a smartphone that provides a voice of a person during a telephone call to a user of the smartphone in binaural sound, the method comprising:storing, in a memory of the smartphone, head-related transfer functions (HRTFs) that are user-specific to an anatomy of the user of the smartphone;
receiving, at a network interface of the smartphone and during the telephone call between the person and the user, a wireless transmission that includes the voice of the person in mono sound;
processing, with a digital signal processor (DSP) in the smartphone, the voice of the person in mono sound with a pair of the HRTFs to change the voice into the binaural sound so the voice of the person in the binaural sound externally localizes at a sound localization point (SLP) that is in empty space one meter away from a head of the user;
tracking, with at least one of an accelerometer, gyroscope, and magnetometer in the smartphone, head movements of the head of the user during the telephone call;
selecting, with a processor in the smartphone during the telephone call, different pairs of the HRTFs based on the head movements of the head of the user tracked with the at least one of the accelerometer, the gyroscope, and the magnetometer;
processing, with the DSP in the smartphone, the voice of the person in mono sound with the different pairs of the HRTFs so the voice of the person continues to localize at a fixed location at the SLP that is in empty space one meter away from the head of the user while the head of the user moves during the telephone call;
playing, through earphones or headphones in communication with the smartphone, the voice of the person in the binaural sound so the voice of the person continues to localize at the fixed location at the SLP that is in empty space one meter away from the head of the user while the head of the user moves during the telephone call;
displaying, with a display of the smartphone and at the SLP that is in empty space one meter away from the head of the user, an image that represents the person with whom the user is talking during the telephone call; and
receiving, at the smartphone during the telephone call, a command from the user to move the SLP and the image to another location that is in empty space one meter away from the head of the user.

US Pat. No. 10,341,796

HEADPHONES THAT MEASURE ITD AND SOUND IMPULSE RESPONSES TO DETERMINE USER-SPECIFIC HRTFS FOR A LISTENER

1. A method executed by headphones that a listener wears, the method comprising:measuring, with one or more sensors in the headphones, while the listener is stationary or moving, a size of a head of the listener to determine an interaural time difference (ITD) and a shape of an ear of the listener with sound impulse responses that along with the ITD determine head-related transfer functions (HRTFs) that are user-specific to physical attributes of the listener that include the size of the head of the listener and the shape of the ear of the listener;
tracking, with a head tracker in the headphones, changes to head orientations of the listener as the head of the listener rotates while wearing the headphones;
receiving, at the headphones and from an electronic device in communication with the headphones, sound to be played to the listener;
processing, with a processor in the headphones, the sound with different pairs of the HRTFs that are selected based on the head orientations tracked with the head tracker so that the sound externally localizes to the listener at a sound localization point (SLP) in empty space that is at least one meter away from the head of the listener and that remains at a fixed location in an environment of the listener while the head of the listener rotates and changes the head orientations with respect to the SLP at the fixed location in the environment of the listener; and
playing, with speakers in the headphones and to the listener while the listener wears the headphones, the sound processed with the different pairs of HRTFs so that the sound externally localizes to the listener at the SLP in empty space that is at least one meter away from the head of the listener and that remains at the fixed location in the environment of the listener while the head of the listener rotates and changes the head orientations with respect to the SLP at the fixed location in the environment of the listener.

US Pat. No. 10,341,795

LOG COMPLEX COLOR FOR VISUAL PATTERN RECOGNITION OF TOTAL SOUND

The Curators of the Unive...

1. An audio visualization method for recognition of a sound, the method comprising:capturing a sound;
determining a brightness and saturation level corresponding to a logarithmic amplitude of the sound,
determining a coefficient phase angle of the sound; and,
displaying the amplitude and phase of the sound simultaneously to generate an image of the sound.

US Pat. No. 10,341,792

SYSTEM FOR DISTRIBUTING AUDIO OUTPUT USING MULTIPLE DEVICES

AMAZON TECHNOLOGIES, INC....

5. A method comprising:receiving, by a first audio device, a command to output audio, wherein the command is indicative of one or more of audio data or one or more audio devices;
generating, by the first audio device, a request for the audio data based on the command;
receiving, by the first audio device, the audio data;
storing, by the first audio device, the audio data in a first cache associated with the first audio device;
providing, by the first audio device, the audio data to a second audio device and a third audio device using a multicast transmission;
receiving, by the first audio device from the second audio device, a first indication of one or more portions of the audio data that were not received;
receiving, by the first audio device from the third audio device, a second indication of the one or more portions of the audio data not received; and
providing, by the first audio device, the one or more portions of the audio data to the second audio device and the third audio device using a single multicast transmission;
storing, by the second audio device, the audio data in a second cache;
configuring a first audio application associated with the first audio device to retrieve the audio data from the first cache;
causing the first audio device to retrieve at least a portion of the audio data from the first cache and to output audio corresponding to the at least a portion of the audio data; and
causing the second audio device to retrieve the at least a portion of the audio data from the second cache and to output audio corresponding to the at least a portion of the audio data.

US Pat. No. 10,341,791

HEARING AUGMENTATION SYSTEMS AND METHODS

1. A hearing system capable of replaying recent sound data recorded by the hearing system, the hearing system comprising:a speaker configured to direct sound into a user's ear;
a microphone configured to detect ambient sound and generate an audio signal representing the ambient sound that is recorded as audio data in sets of audio data blocks;
a memory comprising a machine readable medium that stores machine executable code instructions and said audio data in the sets of audio data blocks; and
a control system coupled to the memory, the control system configured to execute the machine executable code instructions to cause the control system to perform the functions of:
selecting a predetermined length of the audio data that comprises one or more of the sets of the audio data blocks, so that the predetermined length of the audio data is the same length or longer than each audio data block of the sets of audio data blocks, the process of selecting the predetermined length of the audio data comprising referencing most recently recorded audio data blocks from the sets of audio data blocks until the predetermined length of the audio data is achieved;
replaying the predetermined length of audio data upon receiving an instruction to replay the audio data; and
transmitting the predetermined length of audio data to a mobile device configured to store the predetermined length of audio data.

US Pat. No. 10,341,790

SELF-FITTING OF A HEARING DEVICE

iHear Medical, Inc., San...

1. A hearing device comprising: a speaker configured to produce a test output representative of one or more test sound segments corresponding to suprathreshold loudness levels within an audible range of human hearing, wherein the test output is at least partially based on programmable fitting parameters of the hearing device; memory configured to store test sound segments representative of a loud level sound and a soft level sound, and the programmable fitting parameters, wherein a first set of programmable fitting parameters are adjustable based on a consumer's assessment of the loud level sound and a second set of programmable fitting parameters are adjustable based on the consumer's assessment of the soft level sound, and wireless circuitry configured to receive a wireless command to produce the test output, wherein the wireless command is configured to cause the hearing device to produce a test output representative of the test sound segments stored in the memory.

US Pat. No. 10,341,789

IMPLANTABLE AUDITORY PROSTHESIS WITH FLOATING MASS TRANSDUCER

COCHLEAR LIMITED, Macqua...

1. An implantable auditory prosthesis, comprising:a piezoelectric transducer configured to be implanted in a recipient and comprising at least one piezoelectric element configured to deform in response to application of electrical signals thereto so as to generate vibration for delivery to the recipient; and
one or more charge recovery inductors mechanically and electrically connected to the at least one piezoelectric element, wherein the one or more charge recovery inductors are configured to generate additional vibration for delivery to the recipient and are configured to extract non-used energy from the at least one piezoelectric element and to store the non-used energy for subsequent use by the at least one piezoelectric element.

US Pat. No. 10,341,788

HEARING AID BATTERY DRAWER WITH A THIN FILM

1. A hearing aid comprisinga housing having an outer structure and
a battery drawer configured to receive a battery and to be inserted into said housing from said outer structure,
said battery drawer comprising a cover and a surrounding structure,
wherein the surrounding structure is attached to the cover,
said surrounding structure is configured to at least partly surround said battery, and said surrounding structure is configured as a film member made in a flexible and/or bendable material, wherein said battery drawer is configured to receive said battery in said surrounding structure, such that said battery drawer upon a user of the hearing aid gripping and pulling or pushing the cover, the battery drawer is configured to be inserted into or taken out from said housing, wherein the direction of insertion of said battery drawer is substantially perpendicular to a surface of said outer structure of said housing,
wherein said film member comprises two opposing plane sides, which two opposing plane sides of the film member are configured to at least partly surround the battery on at least two opposing sides of said battery,
said two opposing sides of the film member being distanced by a further cylindrical side configured to surround at least a part of the cylindrical periphery of said battery such that said film member receives said battery in a cavity formed by the two plane sides and said cylindrical side of said film member.

US Pat. No. 10,341,787

HEARING AID ADAPTED FOR WIRELESS POWER RECEPTION

PogoTec, Inc., Roanoke, ...

1. A hearing aid system comprising:a hearing aid comprising:
a microphone;
an audio processing circuitry including an amplifier operatively coupled to the microphone, and a speaker configured to receive amplified signals from the amplifier and generate an amplified sound corresponding to the amplified signal;
a power supply circuitry configured to power the microphone, the amplifier, and the speaker;
a receiver comprising at least one coil operatively coupled to the audio processing circuitry and the power supply circuit, wherein the at least one coil is configured to receive wireless signals, and wherein the at least one coil comprises a magnetic metal core within a wire winding, the at least one coil having a receiver impedance; and
a switching circuit configured to generate first signals responsive to wireless signals in a first frequency range and couple the first signals to the audio processing circuitry and further configured to generate second signals responsive to wireless signals in a second frequency range and couple the second signals to the power supply circuitry; and
a base unit comprising a transmitter configured to transmit wireless signals in the second frequency range, wherein the transmitter comprises a transmitter coil having a transmitter impedance, wherein the transmitter impedance and the receiver impedance are optimally matched for:
a particular distance separation between the transmitter and the receiver, and non-optimized for all other separation distances; or
a particular relative orientation between the transmitter and the receiver, and non-optimized for all other relative orientations.

US Pat. No. 10,341,786

HEARING AID DEVICE FOR HANDS FREE COMMUNICATION

1. A hearing aid device comprising:at least two environment sound inputs, each for receiving sound and generating electrical sound signals representing sound;
a wireless sound input for receiving wireless sound signals;
an output transducer configured to stimulate hearing of a hearing aid device user;
a transmitter unit configured to transmit signals representing sound and/or voice, and
electric circuitry operatively coupled, in at least specific modes of operation of the hearing aid device, to the at least two environment sound inputs, the wireless sound input, the output transducer, and the transmitter unit, said electric circuitry including a dedicated beamformer-noise-reduction-system comprising a beamformer,
wherein the hearing aid device is configured to activate a wireless sound receiving mode when the wireless sound input is receiving wireless sound signals,
wherein, in the wireless sound receiving mode, the beamformer-noise-reduction-system is configured to retrieve a user voice signal representing the voice of said user of the hearing aid device from the electrical sound signals,
the wireless sound input is configured to be wirelessly connected to a communication device and to receive wireless sound signals from the communication device, and
the transmitter unit is configured to be wirelessly connected to the communication device and to transmit said user voice signal to the communication device, wherein
the hearing aid device is configured to be worn in or at an ear of the user,
the hearing air device comprises a voice activity detection unit configured to detect if said voice signal of said user is present in the electrical sound signals,
the electric circuitry is configured to estimate a noise power spectral density of a disturbing background noise from sound received with the at least one environment sound input when the voice activity detection unit detects an absence of a voice signal of the user in the electrical sound signal, and
said hearing aid device is configured to determine optimal settings for the beamformer-noise-reduction-system by combining an estimated inter-microphone noise covariance matrix with pre-determined target inter-microphone transfer function or look vector.

US Pat. No. 10,341,785

HEARING DEVICE COMPRISING A LOW-LATENCY SOUND SOURCE SEPARATION UNIT

1. A hearing device comprising:an input unit for delivering a time varying electric input signal representing an observed audio signal comprising at least two sound sources,
a cyclic analysis buffer unit of length A adapted for storing the last A audio samples,
a cyclic synthesis buffer unit of length L, where L is smaller than A, adapted for storing the last L audio samples, which are intended to be separated in individual sound sources,
a database storing an analysis dictionary and a reconstruction dictionary of recorded sound examples from each of the at least two sound sources, each recorded sound example in the database being termed an atom, wherein the reconstruction dictionary includes atoms, from each of the at least two sound sources, originating from audio samples from a first buffer of length L and the analysis dictionary includes atoms, from each of the at least two sound sources, originating from audio samples from a second buffer of length A, where for each atom, the audio samples from the first buffer overlap with the audio samples from the second buffer such that audio samples from first and second buffers form atom pairs between the analysis and reconstruction dictionaries,
a sound source separation unit for separating said electric input signal to provide at least two separated signals representing said at least two sound sources, the sound source separation unit being configured to
estimate the observed audio signal as a weighted summation of the atoms in the dictionaries stored in the database,
determine an optimal weight representation (W) of the last A audio samples of the observed audio signal by minimizing a cost function between the samples of the observed audio signal and the estimated signal given the atoms in the analysis dictionary of the database, and
generate said at least two separated signals of L audio samples by combining atoms in the reconstruction dictionary of the database using the optimal weight representation (W).

US Pat. No. 10,341,745

METHODS AND SYSTEMS FOR PROVIDING CONTENT

Comcast Cable Communicati...

1. A method comprising:receiving, by a network device, a first content item that comprises a plurality of fragment identifiers;
determining, based on a device identifier associated with a first device, that the first device is configured to communicate via Quadrature Amplitude Modulation (QAM);
transmitting, to the first device via QAM, the first content item;
determining, based on a request from a second device and based on a device identifier associated with the second device, that the second device is configured to communicate via Internet Protocol (IP); and
transmitting, to the second device via IP, at least one second content item, of a plurality of second content items related to the first content item, and metadata associated with the at least one second content item, wherein the metadata and at least one fragment identifier of the plurality of fragment identifiers facilitate synchronization of the first content item and the at least one second content item.

US Pat. No. 10,341,423

METHOD AND APPARATUS FOR DISTRIBUTING CONTENT USING A MOBILE DEVICE

MOTOROLA MOBILITY LLC, C...

1. A method performed by a server for enabling distribution of content using a mobile device, the method comprising:receiving, from a first mobile device, a first request for first content identified by a first resource identifier, wherein the first content comprises a first object referred to in the first request, and wherein the first request also refers to a second object;
receiving, with the first request for the first content, a set of presence codes that each indicate proximity of a mobile device without identifying a user of the mobile device, wherein the set of presence codes includes a first presence code for the first mobile device and at least one other presence code for one or more mobile devices in proximity to the first mobile device;
selecting a set of allocated resource identifiers associated with one or more presence codes, in the set of presence codes, for one or more of the mobile devices in proximity to the first mobile device having the first content cached therein, wherein each allocated resource identifier in the set is different than the first resource identifier, and wherein the set of allocated resource identifiers includes second and third allocated resource identifiers and associated second and third presence codes, of the set of presence codes, to retrieve the first and second objects from two different mobile devices in proximity to the first mobile device;
sending, to the first mobile device, the set of allocated resource identifiers and associated presence codes to retrieve the first content cached in the one or more mobile devices in proximity to the first mobile device.

US Pat. No. 10,341,241

HISTORY-BASED CLASSIFICATION OF TRAFFIC INTO QOS CLASS WITH SELF-UPDATE

HUGHES NETWORK SYSTEMS, L...

1. A method of traffic classification, comprising:receiving, at a traffic classifier, a first flow packet of a current traffic flow;
identifying, by the traffic classifier, a target destination of the current traffic flow based on the first flow packet;
checking a history, by the traffic classifier, wherein the history associates a plurality of target destinations with an associated classification type, wherein the history comprises a lookup table mapping one or more IP addresses to one or more FQDNs, and a lookup table mapping each FQDN of the one or more FQDNs to a quality of service (“QoS”) class, wherein the lookup table mapping each FQDN of the one or more FQDNs to a QoS class is updated over time using received traffic flows; and
using at least the check of the history, tagging, by the traffic classifier, the current traffic flow as belonging to the classification type associated with the target destination;
wherein the classification type comprises one of a plurality of QoS classes having one or more QoS requirements.

US Pat. No. 10,340,882

BULK ACOUSTIC WAVE FILTER

Samsung Electro-Mechanics...

15. A bulk acoustic wave filter, comprising:a first electrode and a second electrode disposed on a substrate;
a piezoelectric layer comprising a piezoelectric material, the piezoelectric layer disposed between the first and second electrodes;
a housing comprising a passive element disposed on one surface thereof, wherein the housing is coupled to the substrate to accommodate the piezoelectric layer, the first electrode and the second electrode;
a second piezoelectric layer having one surface disposed on the second electrode;
a third electrode disposed on the other surface of the second piezoelectric layer;
a first via formed on the other surface of the first electrode;
a second via formed on one surface of the second electrode; and
third and fourth vias formed on the substrate,
wherein one surface of each of the first and third electrodes is in contact with the substrate.

US Pat. No. 10,340,693

SYSTEMS AND METHODS FOR GENERATING ENERGY USING A HYDROGEN CYCLE

1. A system for providing electric power to a commercial military or industrial user, the system comprising:a renewable energy power generator;
a hydrogen generator electrically coupled to the renewable energy power generator;
a water source coupled to the hydrogen generator to supply water to the hydrogen generator;
a hydrogen fueled turbine generator coupled to the hydrogen generator;
a hydrogen storage system fluidly coupled to the hydrogen generator and the hydrogen fueled turbine generator; and
a control system communicatively coupled to the renewable energy power generator, the water source, the hydrogen generator and the hydrogen fueled turbine generator;
wherein the control system controls the hydrogen fueled turbine generator to produce at least a portion of the electric power when the renewable energy power generator is unable to produce the at least a portion of the electric power.

US Pat. No. 10,340,687

ESD PROTECTION CIRCUIT AND METHOD WITH HIGH IMMUNITY TO HOT PLUG INSERTION AND OTHER TRANSIENT EVENTS

TEXAS INSTRUMENTS INCORPO...

1. An electrostatic discharge (ESD) protection circuit, comprising:a first transistor, including a first drain terminal coupled with a protected pad, a first source terminal coupled with a voltage supply node, and a first control terminal coupled to a first control node;
a trigger circuit configured to turn on the first transistor to conduct a current from the protected pad to the voltage supply node in response to a first voltage rise in the protected pad at or above a first slew rate; and
a second circuit coupled between the first control node and the voltage supply node, the second circuit configured to reduce the voltage of the first control node in response to a second voltage rise of the first control node at a second slew rate below the first slew rate, the reduced voltage of the first control node partially reducing the current flow through the first transistor, the second circuit comprising:
a low pass filter circuit to provide a rising filter output signal at a first filter node responsive to the rises in the voltage of the first control node, the low pass filter circuit including a first filter resistor connected between the first control node and the first filter node, and a first filter capacitor connected between the first filter node and the voltage supply node, a filter time constant associated with the first filter resistor and the first filter capacitor of the low pass filter circuit is between 100 ns and 2 ?s.

US Pat. No. 10,340,641

DEVICE FOR TRANSMITTING DATA

1. A device for data transmission, said device comprising a data module for storing and playing back data, and also a plug connector housing having a cable outlet opening and a cable gland, wherein the device comprises furthermore an adaptor module that comprises at least one cable passage region and that the adaptor module comprises a cable inlet opening at a first end of this cable passage region and a cable outlet opening at a second end of this cable passage region, wherein the adaptor module may be fastened through its cable inlet opening to the cable outlet opening of the plug connector housing, and the cable gland may be fastened to the cable outlet opening of the adaptor module, with the result that the adaptor module may be fastened between the cable outlet opening and the cable gland, and further wherein the adaptor module comprises in addition to the cable outlet opening a further outlet for outputting data.

US Pat. No. 10,340,403

PHOTOVOLTAIC DEVICE

SANYO ELECTRIC CO., LTD.,...

1. A photoelectric conversion device comprising:a crystalline semiconductor substrate having a first surface and a second surface; and
a first amorphous semiconductor layer formed over the first surface of the crystalline semiconductor substrate, wherein
an interface between the crystalline semiconductor substrate and the first amorphous semiconductor layer is an oxidized interface containing oxygen;
the first amorphous semiconductor layer comprises a high-oxygen-concentration region;
the oxidized interface has an oxygen concentration higher than an oxygen concentration of the high-oxygen-concentration region; and
the high-oxygen-concentration region has an oxygen concentration profile in which the oxygen concentration shown in a logarithmic scale is reduced stepwise in two or more steps from a side near the oxidized interface along a thickness direction of the first amorphous semiconductor layer;
the oxygen concentration profile comprises a first region, a second region, a third region, and a fourth region in this order from the side near the oxidized interface along the thickness direction of the first amorphous semiconductor layer;
the first region comprising a rising portion of a first step of the two or more steps;
the third region comprises a rising portion of the second step of the two or more steps;
the first region has a first slope, shown in a logarithmic scale, of the oxygen concentration from the side near the oxidized interface along the thickness direction, a magnitude of the first slope being defined as a first gradient;
the second region has a second slope, shown in a logarithmic scale, of the oxygen concentration from the side near the oxidized interface along the thickness direction, a magnitude of the second slope being defined as a second gradient;
the third region has a third slope, shown in a logarithmic scale, of the oxygen concentration from the side near the oxidized interface along the thickness direction, a magnitude of the third slope being defined as a third gradient;
the fourth region has a fourth slope, shown in a logarithmic scale, of the oxygen concentration from the side near the oxidized interface along the thickness direction, a magnitude of the fourth slope being defined as a fourth gradient; and
the second gradient and the fourth gradient are smaller than the first gradient and the third gradient.

US Pat. No. 10,340,402

METHOD OF PREPARING METAL CHALCOGENIDE NANOPARTICLES AND METHOD OF PRODUCING LIGHT ABSORPTION LAYER THIN FILM BASED THEREON

LG CHEM, LTD., Seoul (KR...

1. A method of preparing metal chalcogenide nanoparticles, the method comprising:heat-treating at least one type of single-source precursor,
wherein the single-source precursor comprises a metal-ligand complex selected from the group consisting of a copper (Cu)-ligand complex, a tin (Sn)-ligand complex and a zinc (Zn)-ligand complex,
wherein the ligand comprises one or more selected from the following:

wherein R is a methyl group, an ethyl group or a propyl group.

US Pat. No. 10,340,401

MULTI-LAYER BACK SURFACE FIELD LAYER IN A SOLAR CELL STRUCTURE

The Boeing Company, Chic...

1. A photovoltaic (PV) cell comprising:an emitter layer comprising a first material having a first doping;
a base layer having a first side adjacent to said emitter layer and a second side, said base layer comprising the first material having a second doping that is opposite the first doping and a first bandgap between 0.7 eV and 2.0 eV; and
a back surface field (BSF) layer adjacent to said base layer, said BSF layer comprising:
a first, strained layer adjacent to said second side of said base layer and comprising a second, indium-free material made of AlGaAs having an aluminum content greater than about 50%, said first, strained layer having a second bandgap between 4.95 eV and 2.1 eV that increases relative to the aluminum content, said first, strained layer comprising a first doping concentration of the second doping achieved using carbon, wherein the first doping concentration is larger than a second doping concentration of the second doping of said base layer and wherein said first, strained layer is fully strained and has a thickness of less than 8 nm; and
a second layer adjacent to said first, strained layer and comprising a third material made of AlGaInAs and a third bandgap, wherein the use of In in said third material reduces the third bandgap to below 2.0 eV and wherein said second layer of said BSF layer is lattice-matched to said base layer.

US Pat. No. 10,340,396

METHOD FOR MANUFACTURING SOLAR CELL

LG ELECTRONICS INC., Seo...

1. A method for manufacturing a solar cell, the method comprising:forming a semiconductor layer on one surface of a semiconductor substrate;
forming a mask layer comprising a first layer and a second layer sequentially on the semiconductor layer;
texturing another surface of the semiconductor substrate using the mask layer as a mask;
forming a patterned mask layer by forming an opening in the mask layer through a laser patterning using a laser; and
forming a conductive region through a doping process of doping a portion of the semiconductor layer exposed through the opening with a dopant.

US Pat. No. 10,340,394

III-V SEMICONDUCTOR DIODE

3-5 Power Electronics Gmb...

1. A stacked III-V semiconductor diode comprising:an n+-layer with an upper side, a lower side, a dopant concentration of at least 1019 N/cm3 and a layer thickness of about 675 microns or less, wherein said n+-layer comprises a GaAs compound;
an n?-layer with an upper side and a lower side, a dopant concentration of 1012-1016 N/cm3, a layer thickness of 10-300 microns, and comprising a GaAs compound;
a p+-layer with an upper side, a lower side, a dopant concentration of 5×1018-5×1020 N/cm3, with a layer thickness greater than 2 microns and comprising a GaAs compound; and
a p-type intermediate layer with a layer thickness of 1-50 microns and a dopant concentration of 1012-1017 N/cm3 is disposed between the n?-layer and the p+-layer, and is materially bonded with an upper side and a lower side, and the lower side of the p-type intermediate layer is materially bonded with the upper side of the n?-layer, and the upper side of the p-type intermediate layer is materially bonded with the lower side of the p+-layer,
wherein the n+-layer, the n?-layer, and the p+-layer are monolithically formed,
wherein the n+-layer or the p+-layer is formed as a substrate and the lower side of the n?-layer is materially connected to the upper side of the n+-layer,
wherein the p-type intermediate layer is materially bonded with the n?-layer and with the p+-layer and is p-doped,
wherein the stacked III-V semiconductor diode has a first defect layer with a layer thickness between 0.5 microns and 40 microns,
wherein the first defect layer is arranged within the p-type intermediate layer, and
wherein the first defect layer has a first defect concentration ranging between 1×1013 N/cm3 and 5×1016 N/cm3.

US Pat. No. 10,340,393

SEMICONDUCTOR CONSTRUCTIONS, METHODS OF FORMING VERTICAL MEMORY STRINGS, AND METHODS OF FORMING VERTICALLY-STACKED STRUCTURES

Micron Technology, Inc., ...

1. A memory device, comprising:a stack of alternating electrically conductive levels and electrically insulative levels over a material comprising tungsten silicide;
electrically insulative pillars that extends through the stack and contactan upper surface of the material comprising tungsten silicide;a channel material post between a first adjacent pair of the pillars, the channel material post extending through the material comprising tungsten silicide and having a first pair of opposing sides and a second pair of opposing sides; each side of the first pair of opposing sides being spaced from a respective one of a second adjacent pair of the pillars by a corresponding intervening region of the stack; none of the stack being present between each side of the second pair of opposing sides and a respective one of the first adjacent pair of the pillars;
gate dielectric material and charge-storage material between edges of the electrically conductive levels and the channel material post.

US Pat. No. 10,340,392

SEMICONDUCTOR DEVICE INCLUDING MARK PORTION AND PRODUCTION METHOD FOR SAME

Sharp Kabushiki Kaisha, ...

1. A semiconductor device comprising: a substrate; a thin film transistor supported by the substrate; an interlayer insulating layer covering the thin film transistor; and a wire connecting portion,wherein the thin film transistor includes a gate electrode provided on the substrate, a gate insulating layer covering the gate electrode, an oxide semiconductor layer provided on the gate insulating layer, a protection layer covering at least a channel region of the oxide semiconductor layer, and a source electrode and a drain electrode, each of which is in contact with the oxide semiconductor layer,
the wire connecting portion includes
a lower electrically-conductive portion formed out of a same electrically-conductive film as the gate electrode,
an insulating layer which is provided on the lower electrically-conductive portion and which has a contact hole through which at least a part of the lower electrically-conductive portion is exposed, and
an upper electrically-conductive portion, at least a part of which is provided inside the contact hole,
the insulating layer includes the gate insulating layer, the protection layer and the interlayer insulating layer,
at a lateral wall of the contact hole, the gate insulating layer includes an upper portion and a lower portion which is present on the substrate side of the upper portion, and when viewed in a normal direction of the substrate, a lateral surface of the lower portion juts out from a lateral surface of the upper portion, and
the upper electrically-conductive portion is in contact with the lower electrically-conductive portion and the lateral surface and an upper surface of the lower portion of the gate insulating layer inside the contact hole, and
the semiconductor device further includes
a mark portion formed out of a same electrically-conductive film as the gate electrode;
an island-shaped insulating film covering the mark portion;
an oxide semiconductor cover portion formed out of a same semiconductor film as the oxide semiconductor layer and arranged so as to at least partially overlap the mark portion with the insulating film interposed therebetween; and
an upper electrical conductor cover portion covering the oxide semiconductor cover portion, wherein
at a periphery of the insulating film, the insulating film includes another upper portion and another lower portion which is present on the substrate side of the another upper portion, a lateral surface of the another lower portion jutting out from a lateral surface of the another upper portion when viewed in the normal direction of the substrate,
the lateral surface of the another upper portion is in alignment with a lateral surface of the oxide semiconductor cover portion, and
the upper electrical conductor cover portion is arranged so as to be in contact with the lateral surface and an upper surface of the another lower portion, the lateral surface of the another upper portion, and the lateral surface and an upper surface of the oxide semiconductor cover portion.

US Pat. No. 10,340,390

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME

SHARP KABUSHIKI KAISHA, ...

1. A semiconductor device comprising:a substrate, a thin-film transistor supported on the substrate, and a first insulating layer,
the thin-film transistor including a semiconductor layer, a gate electrode, a gate insulating layer arranged between the gate electrode and the semiconductor layer, a source electrode, and a drain electrode, the source electrode and the drain electrode being in contact with the semiconductor layer, wherein
one of an upper surface and a lower surface of the semiconductor layer is in contact with the gate insulating layer, the other is in contact with the first insulating layer,
the semiconductor layer has a laminated structure including a first oxide semiconductor layer and a second oxide semiconductor layer, the first oxide semiconductor layer is arranged on a gate insulating layer side of the second oxide semiconductor layer and is in contact with the second oxide semiconductor layer,
the first insulating layer contains silicon oxide,
the second oxide semiconductor layer contains In and Ga and does not contain Sn,
the first oxide semiconductor layer contains In, Sn, and Zn,
a percentage of Zn in the first oxide semiconductor layer in a depth direction does not have a maximum value in a vicinity of a surface of the first oxide semiconductor layer adjacent to the second oxide semiconductor layer,
a percentage of Sn having a metallic bonding state at an interface between the first oxide semiconductor layer and the second oxide semiconductor layer is 90% or less with respect to a total amount of Sn, and
a region where the percentage of Sn having the metallic bonding state at the interface between the first oxide semiconductor layer and the second oxide semiconductor layer is 50% or more with respect to the total amount of Sn has a thickness of less than 10 nm.

US Pat. No. 10,340,389

MULTI-GATE THIN FILM TRANSISTORS, MANUFACTURING METHODS THEREOF, ARRAY SUBSTRATES, AND DISPLAY DEVICES

BOE Technology Group Co.,...

1. A thin film transistor comprising a base substrate, an active layer, a source, a gate, and a drain, the active layer, the source, the gate, and the drain disposed on the base substrate, the active layer including an end connected to the source and another end connected to the drain,the gate including a top gate and a bottom gate, the top gate including a top gate top portion and a top gate side portion connected to the top gate top portion, the top gate top portion and the bottom gate arranged opposite to each other in a direction perpendicular to the base substrate, the top gate side portion extending from the top gate top portion towards the base substrate and not physically contacting the bottom gate,
the active layer sandwiched between the top gate top portion and the bottom gate, and the active layer including a sidewall at least partially surrounded by the top gate side portion.

US Pat. No. 10,340,385

METHOD TO IMPROVE FINFET DEVICE PERFORMANCE

SEMICONDUCTOR MANUFACTURI...

1. A method for manufacturing a semiconductor device, the method comprising:providing a substrate structure comprising a PMOS region and an NMOS region, the PMOS region including a first semiconductor region, a first gate structure on the first semiconductor region, and a first epitaxial grown raised source region and a first epitaxial grown raised drain region on opposite sides of the first gate structure, the NMOS region including a second semiconductor region and a second gate structure on the second semiconductor region;
introducing a p-type dopant into the first epitaxial grown raised source region and the first epitaxial grown raised drain region;
performing a first annealing process on the substrate structure after the p-type dopant has been introduced into the first epitaxial grown raised source region and the first epitaxial grown raised drain region;
forming a second source region and a second drain region on opposite sides of the second gate structure;
introducing an n-type dopant into the second source region and the second drain region; and
performing a second annealing process on the substrate structure after the n-type dopant has been introduced into the second source region and the second drain region.

US Pat. No. 10,340,384

METHOD OF MANUFACTURING FIN FIELD-EFFECT TRANSISTOR DEVICE

Taiwan Semiconductor Manu...

1. A method comprising:forming a first fin protruding above a substrate, the first fin having a PMOS region;
forming a first gate structure over the first fin in the PMOS region;
forming a first spacer layer over the first fin and the first gate structure;
forming a second spacer layer over the first spacer layer;
performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region;
performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and
epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

US Pat. No. 10,340,383

SEMICONDUCTOR DEVICE HAVING STRESSOR LAYER

TAIWAN SEMICONDUCTOR MANU...

1. A semiconductor device comprising:a fin extending along a first direction over a semiconductor substrate;
a gate structure extending in a second direction overlying the fin,
wherein the gate structure comprises:
a gate dielectric layer overlying the fin;
a gate electrode overlying the gate dielectric layer; and
insulating gate sidewalls on opposing lateral surfaces of the gate electrode extending along the second direction;
a source/drain region in the fin in a region adjacent the gate structure,
wherein the source/drain region consists essentially of Ge or SiGe and a first dopant; and
a stressor layer between the source/drain region and the semiconductor substrate,
wherein the stressor layer includes GeSn or SiGeSn containing 1019 atoms cm?3 or less of a second dopant, and
a portion of the fin under the gate structure is a channel region.

US Pat. No. 10,340,382

EMBEDDED SOURCE OR DRAIN REGION OF TRANSISTOR WITH DOWNWARD TAPERED REGION UNDER FACET REGION

TAIWAN SEMICONDUCTOR MANU...

1. A method, comprising:providing a semiconductor structure comprising a body structure;
forming a gate structure over the body structure;
forming a first pair of dielectric structures abutting the body structure;
removing a portion of the body structure and a portion of the first pair of dielectric structures to form downward tapered sidewalls of the first pair of dielectric structures to define a source or drain recess;
growing stressor material with a lattice constant different from that of the body structure in the source or drain recess to form a source or drain region, wherein the source or drain region comprises:
a first region formed above a first level at a top of the first pair of dielectric structures; and
a second region formed under the first level and abutting the downward tapered side walls of the first pair of dielectric structures.

US Pat. No. 10,340,381

METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE

UNITED MICROELECTRONICS C...

1. A method for fabricating a semiconductor structure, comprising:providing a substrate;
forming a dielectric layer on the substrate;
forming a gate conductive layer and two spacers disposed in the dielectric layer, wherein the two spacers are respectively disposed on both sides of the gate conductive layer;
forming a high-k layer and a work function metal layer between the gate conductive layer and the substrate;
removing parts of the gate conductive layer, parts of the high-k layer and parts of the work function metal layer;
removing parts of the two spacers, wherein a top surface of the two spacers is lower than a top surface of the gate conductive layer, and wherein a top surface of the high-k layer and a top surface of the work function metal layer are higher than the top surface of the two spacers and lower than the top surface of the gate conductive layer; and
forming a cap layer overlying the gate conductive layer and the two spacers, wherein parts of the cap layer is located right above the two spacers.

US Pat. No. 10,340,380

THREE-DIMENSIONAL TRANSISTOR WITH IMPROVED CHANNEL MOBILITY

GLOBALFOUNDRIES Inc., Gr...

1. A semiconductor structure, comprising:a plurality of spaced apart fins, each of said plurality of spaced apart fins comprising a semiconductor material;
a dielectric material layer positioned between each of said plurality of spaced apart fins;
a common gate structure positioned above said dielectric material layer and extending across each of said plurality of spaced apart fins;
a continuous merged semiconductor material region positioned on each of said plurality of spaced apart fins and above said dielectric material layer, wherein said continuous merged semiconductor material region is laterally spaced apart from said common gate structure and extends between and physically contacts each of said plurality of spaced apart fins, said continuous merged semiconductor material region having a first sidewall surface that faces toward said common gate structure and a second sidewall surface that is opposite of said first sidewall surface and faces away from said common gate structure, wherein said first sidewall surface of said continuous merged semiconductor material region, a first portion of opposing sidewall surfaces of an adjacent pair of said plurality of spaced apart fins, and a first portion of an upper surface of said dielectric material layer at least partially define a first space between said continuous merged semiconductor material region and said common gate structure, and wherein said second sidewall surface of said continuous merged semiconductor material region, a second portion of said opposing sidewall surfaces of said adjacent pair of said plurality of spaced apart fins, and a second portion of said upper surface of said dielectric material layer at least partially define a second space on an opposite side of said continuous merged semiconductor material region from said first space; and
a stress-inducing material positioned in said first space.

US Pat. No. 10,340,379

SEMICONDUCTOR DEVICE WITH PLURALITY OF ACTIVE BARRIER SECTIONS

Renesas Electronics Corpo...

1. A semiconductor device comprising:a first output element;
a second output element that is provided to be spaced apart from the first output element when seen in a plan view;
a circuit unit that is provided between the first output element and the second output element when seen in a plan view;
a first element isolation section that is configured in a closed pattern enclosing the circuit unit when seen in a plan view;
a second element isolation section that is configured in a closed pattern enclosing the first element isolation section while spaced apart from the first element isolation section when seen in a plan view;
an isolation section that is connected to the first element isolation section and the second element isolation section and separates a region sandwiched between the first element isolation section and the second element isolation section into a first region and a second region;
a first barrier section that is enclosed by the first region when seen in a plan view; and
a second barrier section that is enclosed by the second region when seen in a plan view.

US Pat. No. 10,340,378

SEMICONDUCTOR DEVICE

Kabushiki Kaisha Toshiba,...

1. A semiconductor device, comprising:a first electrode;
a first semiconductor region provided on the first electrode and electrically connected to the first electrode, the first semiconductor region being of a first conductivity type;
a second semiconductor region provided on the first semiconductor region, the second semiconductor region being of a second conductivity type;
a third semiconductor region provided on a portion of the second semiconductor region, the third semiconductor region being of the first conductivity type;
a gate electrode provided on the first semiconductor region, the gate electrode including
a first portion, the first portion opposing, in a second direction with a gate insulating portion interposed, the second semiconductor region, a portion of the first semiconductor region, and at least a portion of the third semiconductor region, the second direction being perpendicular to a first direction, the first direction being from the first semiconductor region toward the second semiconductor region,
a second portion separated from the first portion in a third direction, the third direction being perpendicular to the first direction and the second direction, and
a third portion positioned between the first portion and the second portion,
a fourth semiconductor region including a first region and being of the second conductivity type, the first region opposing the second portion in the second direction with the gate insulating portion interposed;
an interconnect portion provided on the third portion and electrically connected to the third portion; and
a second electrode provided on the second semiconductor region, the third semiconductor region, and the first region, the second electrode being electrically connected to the second semiconductor region, the third semiconductor region, and the fourth semiconductor region and electrically isolated from the interconnect portion.

US Pat. No. 10,340,377

EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS

Vishay-Siliconix, San Jo...

1. A metal oxide semiconductor field effect transistor (MOSFET) comprising:a core region comprising a plurality of parallel core plates coupled to a source terminal of said super-junction MOSFET; and
a termination region surrounding said core super-junction region comprising
a plurality of termination segments configured to force breakdown into said core super-junction region and away from said termination region,
wherein all said termination segments in said termination region are electrically floating,
wherein each of said termination segments has a length dimension less than a length dimension of said core plates.

US Pat. No. 10,340,376

HETEROJUNCTION FIELD-EFFECT TRANSISTOR HAVING GERMANIUM-DOPED SOURCE AND DRAIN REGIONS

OMMIC, Limeil Brevannes ...

1. A heterojunction field-effect transistor comprising:a semiconductor structure made up of superposed layers, comprising in a stacking order on a substrate layer:
a buffer layer composed of a material having a hexagonal crystal structure of Ga(1-x-y)Al(x)In(y)N, where x and y are comprised between 0 inclusive and 1 inclusive, the sum x+y being lower than or equal to 1,
a channel layer on the buffer layer, the channel layer being composed of a material having a hexagonal crystal structure of Ga(1-z-w)Al(z)In(w)N, where z and w are comprised between 0 inclusive and 1 inclusive, the sum z+w being lower than or equal to 1, at least one of z and w being different from x or y, respectively, and
a barrier layer on the channel layer, the barrier layer being composed of a material having a hexagonal crystal structure of Ga(1-z?-w?)Al(z?)In(w?)N, where z? and w? are comprised between 0 inclusive and 1 inclusive, the sum z?+w? being lower than or equal to 1, at least one of z? and w? being different from z or w, respectively,
a layer of epitaxial material, deposited by epitaxy on a growth zone corresponding to the location of an opening formed in a dielectric masking layer, the growth material having a hexagonal crystal structure and being composed of Ga(1-x?-y?)Al(x?)In(y?)N and previously-doped with germanium, where x? and y? are comprised between 0 inclusive and 1 inclusive, the sum x?+y? being lower than or equal to 1, at a temperature sufficient for constituent atoms of the semiconductor material having the hexagonal crystal structure of Ga(1-x?-y?)Al(x?)In(y?)N doped with germanium to migrate toward the growth zone, by mass transport, and
a contact electrode on the layer of growth material and a gate electrode in a location outside of the growth zone,
wherein the material doped with germanium has a sufficiently defined crystal structure for lateral edges of the growth layer to have an inclination between 5° and 60° relative to the vertical.

US Pat. No. 10,340,375

EPITAXIAL SUBSTRATE FOR FIELD EFFECT TRANSISTOR

SUMITOMO CHEMICAL COMPANY...

1. An epitaxial substrate for a field effect transistor, said epitaxial substrate comprising:a ground layer;
a first buffer layer that (i) is disposed directly and physically above the ground layer, (ii) has a thickness from 50 angstroms to 2000 angstroms, and (iii) contains only AlN doped with Mn as a compensation impurity element at a first concentration from 1E10 cm?3 to 1E20 cm?3;
a second buffer layer that (i) is disposed directly and physically above the first buffer layer, (ii) has a thickness of 5,000 angstroms or more, and (iii) contains only AlGaN doped with Mn at a second concentration from 1E15 cm?3 to 5E20 cm?3;
an epitaxial crystal layer that (i) is disposed directly and physically above the second buffer layer and (ii) is an undoped epitaxial crystal layer containing only GaN; and
an operating layer that is disposed above the epitaxial crystal layer and comprises undoped AlGaN.

US Pat. No. 10,340,374

HIGH MOBILITY FIELD EFFECT TRANSISTORS WITH A RETROGRADED SEMICONDUCTOR SOURCE/DRAIN

Intel Corporation, Santa...

1. A monolithic high mobility field effect transistor, comprising:a gate electrode over a channel region comprising a first III-V semiconductor material of a first alloy composition; and
a pair of semiconductor source/drain regions impurity doped to a same conductivity type and interfacing the channel region, the source/drain regions comprising a compositionally graded III-V semiconductor alloy varying between:
the first alloy composition proximal to an interface of the channel region and a second alloy composition a first distance from the interface, wherein material with the second alloy composition has a charge carrier-blocking band offset from material with the first alloy composition; and
the second alloy composition and a third alloy composition at a second distance from the interface, material with the third alloy composition having a non-blocking band offset from material with the second alloy composition.

US Pat. No. 10,340,373

REVERSE CONDUCTING IGBT

University of Electronic ...

1. A reverse conducting insulated gate bipolar transistor (RC-IGBT), comprising:a P-type region;
an N-type emitter region;
a P-type body contact region;
a dielectric trench;
a collector region; and
an electrical field cutting-off region,
wherein
the P-type region is formed on a surface of a N-type high resistance semiconductor material,
the N-type emitter region and the P-type body contact region are alternately formed on a surface of the P-type region side by side along a lateral direction of the RC-IGBT,
the dielectric trench is formed in a central region of the N-typed emitter region and passes through the P-type region,
a bottom of the dielectric trench contacts the N-type high resistance semiconductor material,
in the dielectric trench are provided an insulating dielectric layer located at an inner wall of the dielectric trench and a conductive material surrounded by the insulating dielectric layer,
a gate electrode is led out from the conductive material in the dielectric trench to form a trench-gate structure,
a common terminal led out from the N-type emitter region and the P-type body contact region serves as an emitter electrode,
on a backside of the high resistance N-type semiconductor material, a collector region consists of a N-type area and a P-type area that are continuously alternately disposed along the lateral direction of the RC-IGBT,
a common terminal led out from the N-type area and the P-type area serves as a collector electrode,
an electrical field cutting-off region is provided on the top of the collector region,
there is an interval of the N-type high resistance material between the electrical field cutting-off region and the collector region in a longitudinal direction of the RC-IGBT,
the electrical field cutting-off region is formed by N-type heavily doped regions and P-type lightly doped regions that are continuously alternately disposed along the lateral direction of the RC-IGBT, and
the lateral direction and the longitudinal direction of the RC-IGBT are in the same plane and are perpendicular to each other.

US Pat. No. 10,340,372

TRANSISTOR DEVICE HAVING A PILLAR STRUCTURE

Semiconductor Components ...

1. An apparatus, comprising:a first trench disposed in a semiconductor region and including a gate electrode;
a second trench disposed in the semiconductor region;
a mesa region disposed between the first trench and the second trench;
a source region of a first conductivity type disposed in a top portion of the mesa region;
an epitaxial layer of the first conductivity type;
a body region of a second conductivity type disposed in the mesa region and disposed between the source region and the epitaxial layer of the first conductivity type, the second conductivity type being different than the first conductivity type; and
a pillar of the second conductivity type disposed in the mesa region such that a first portion of the source region is disposed lateral to, and in contact with the pillar, and a second portion of the source region is disposed above, and in contact with the pillar.

US Pat. No. 10,340,371

MODULATION DEVICE COMPRISING A NANODIODE

CENTRE NATIONAL DE LA REC...

1. A modulation device made on a substrate including at least one nanodiode which appears as T fitted into a U, a channel of this nanodiode being a leg of the T which penetrates into the U,characterized in that it includes at least one electrically conductive line which passes over at least one portion of this channel thereby forming a switch.

US Pat. No. 10,340,370

ASYMMETRIC GATED FIN FIELD EFFECT TRANSISTOR (FET) (FINFET) DIODES

QUALCOMM Incorporated, S...

1. An asymmetric gated fin Field Effect Transistor (FET) (finFET) diode, comprising:a substrate comprising:
a first-type well region; and
a fin disposed in a direction, the fin comprising:
a first source/drain region having a first length in the direction, wherein, within the first length, the first source/drain region comprises a first-type doped material disposed in the fin and extending in the direction from a first side to a second side of the first-type doped material;
a second source/drain region having a second length in the direction that is larger than the first length, wherein, within the second length, the second source/drain region comprises a second-type doped material disposed in the fin and extending in the direction from a first side to a second side of the second-type doped material; and
a gate region disposed between the first source/drain region and the second source/drain region having a third length in the direction that is equal to the second length plus a difference of the second length and the first length.

US Pat. No. 10,340,368

FIN FORMATION IN FIN FIELD EFFECT TRANSISTORS

International Business Ma...

1. A method of forming a semiconductor device, the method comprising:forming a plurality of fins from a first material;
depositing a semiconductor layer formed from a second material over the plurality of fins;
depositing dielectric material covering the plurality of fins and the semiconductor layer, the dielectric material defining dielectric regions; and
diffusing the second material from the semiconductor layer into an entirety of each fin of the plurality of fins.

US Pat. No. 10,340,367

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TAIWAN SEMICONDUCTOR MANU...

1. A method for manufacturing a semiconductor device, comprising:forming a spacer layer over a dummy gate, formed over a first portion of a fin structure, and a second portion of the fin structure;
forming a dielectric layer over the spacer layer;
removing the dielectric layer and the spacer layer formed over the dummy gate to expose the first portion of the fin structure;
forming a gate stack over the exposed first portion of the fin structure;
forming trenches by removing the dielectric layer formed over a remaining portion of the spacer layer and a portion of a height of the fin structure underneath the dielectric layer; and
forming source and drain contacts by filling the trenches with a metal.

US Pat. No. 10,340,366

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

TAIWAN SEMICONDUCTOR MANU...

1. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:forming a fin structure over a substrate, the fin structure extending in a first direction and including an upper layer, a part of the upper layer being exposed from an isolation insulating layer;
forming a dummy gate structure over a part of the fin structure, the dummy gate structure extending in a second direction crossing the first direction;
removing the dummy gate structure and forming a gate structure in a region in which the dummy gate structure is removed;
forming an interlayer dielectric layer over the fin structure and the gate structure;
forming a contact hole in the interlayer dielectric layer so that a part of the fin structure is exposed;
forming a source/drain structure on the exposed fin structure;
directly depositing a cap layer, by using a first gas and a second gas, on the source/drain structure, the cap layer covering a bottom surface and sidewalls of the contact hole;
forming a dielectric layer over the cap layer; and
forming a contact metal layer over the dielectric layer.

US Pat. No. 10,340,364

H-SHAPED VFET WITH INCREASED CURRENT DRIVABILITY

International Business Ma...

1. A method of forming a fin structure for a vertical field effect transistor (VFET), the method comprising the steps of:depositing a hardmask onto a substrate;
depositing a mandrel material onto the hardmask;
patterning the mandrel material along a first direction to form first mandrels;
forming first spacers alongside the first mandrels;
filling gaps between the first mandrels with additional mandrel material to form second mandrels in between the first mandrels;
patterning the first mandrels, the first spacers and the second mandrels along a second direction, wherein the second direction is perpendicular to the first direction;
forming second spacers, perpendicular to the first spacers, alongside the first mandrels and the second mandrels;
selectively removing the first mandrels and the second mandrels leaving behind a ladder-shaped pattern formed by the first spacers and the second spacers;
transferring the ladder-shaped pattern to the hardmask; and
transferring the ladder-shaped pattern from the hardmask to the substrate to form a first fin adjacent to a second fin, and at least one cross fin interconnecting the first fin and the second fin; and
cutting the ladder-shaped pattern in the substrate into individual fin structures, wherein cuts made during the cutting are located to form each individual fin structure comprising: a first cross fin interconnecting the first fin and the second fin at one end of the individual fin structure, and a second cross fin interconnecting the first fin and the second fin at another end of the individual fin structure in an O-shaped fin structure.

US Pat. No. 10,340,363

FABRICATION OF VERTICAL FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED BOTTOM INSULATING SPACERS

International Business Ma...

18. A semiconductor device, comprising:a vertical field effect transistor (FET) device on a semiconductor substrate, wherein the vertical FET device comprises:
a semiconductor fin formed on a recessed surface of a semiconductor substrate;
a lower source/drain region formed on the recessed surface of the semiconductor substrate in contact with a bottom portion of the semiconductor fin, wherein the lower source/drain region comprises a first type of epitaxial semiconductor material;
a self-aligned bottom insulating spacer formed on the lower source/drain region, the self-aligned bottom insulating spacer comprising an oxide layer formed from oxidation of a second type of epitaxial semiconductor material epitaxially grown on the lower source/drain region, which is different from the first type of epitaxial semiconductor material;
a gate structure formed in contact with sidewalls of the semiconductor fin;
an upper insulating spacer formed on the gate structure; and
an upper source/drain region formed on an upper portion of the semiconductor fin;
wherein the self-aligned bottom insulating spacer electrically insulates the lower source/drain region from the gate structure;
wherein the upper insulating spacer electrically insulates the upper source/drain region from the gate structure; and
wherein the first type of epitaxial semiconductor material comprises crystalline silicon germanium with a first concentration of germanium, and wherein the second type of epitaxial semiconductor material comprises crystalline silicon germanium with a second concentration of germanium that is greater than the first concentration of germanium.

US Pat. No. 10,340,362

SPACERS FOR TIGHT GATE PITCHES IN FIELD EFFECT TRANSISTORS

GLOBALFOUNDRIES Inc., Gr...

1. A structure comprising:a semiconductor body having a top surface;
an epitaxial layer of semiconductor material on the semiconductor body;
a first gate structure on the semiconductor body, the first gate structure having a sidewall;
a first spacer adjacent to the sidewall of the first gate structure, the first spacer having a first section and a second section vertically between the first section and the top surface of the semiconductor body, the first section of the first spacer having a first thickness, and the second section of the first spacer having a second thickness different from the first thickness; and
a conformal layer on the first spacer and the epitaxial layer of semiconductor material,
wherein the second section of the first spacer is located between the epitaxial layer of semiconductor material and the sidewall of the first gate structure, the first spacer is composed of SiBCN having a first dielectric constant, and the conformal layer is composed of SiBCN having a second dielectric constant that is less than the first dielectric constant of the SiBCN of the first spacer.

US Pat. No. 10,340,361

FORMING OF A MOS TRANSISTOR BASED ON A TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL

1. A MOS transistor manufacturing method, comprising the successive steps of:a) forming a first layer made of a conductive or semiconductor material on a surface of a support substrate;
b) forming a sacrificial gate on the upper surface of the first layer, and a second layer made of an insulating material laterally surrounding the sacrificial gate;
c) forming, on either side of the sacrificial gate, source and drain electric connection elements made of a conductive material, crossing the second layer and contacting the first layer;
d) removing the sacrificial gate and the portion of the first layer located vertically in line with the sacrificial gate;
e) depositing a third layer made of a two-dimensional semiconductor material on the sides and on the bottom of an opening formed at step d) by the removal of the sacrificial gate and of the first layer);
f) depositing a fourth layer made of an insulating material on the third layer; and
g) forming a conductive gate in the opening, on the fourth layer.

US Pat. No. 10,340,360

NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A nitride semiconductor device comprising:an electron transit layer including GaxIn1-xN (0 an electron supply layer formed on the electron transit layer and including AlaGabIncN (0?a?1, 0?b?1, 0?c?1 and a+b+c=1);
a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and
a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween,
wherein the gate insulating film includes an oxide of the electron supply layer.

US Pat. No. 10,340,359

GATE STRUCTURE WITH DUAL WIDTH ELECTRODE LAYER

GLOBALFOUNDRIES Inc., Gr...

1. A high-k dielectric metal gate (HKMG) transistor, comprising:a substrate;
an HKMG gate stack with a gate dielectric layer and a gate electrode layer positioned above said substrate, wherein said gate electrode layer has an upper portion and a lower portion;
a first liner contacting a sidewall portion of said upper portion;
a spacer contacting said first liner and a sidewall portion of said lower portion; and
raised source and drain regions adjacent said spacer, wherein a height of an uppermost surface of said spacer is greater than a height of an uppermost surface of said raised source and drain regions, and a width of said upper portion between said raised source and drain regions is smaller than a width of said lower portion between said raised source and drain regions.

US Pat. No. 10,340,356

LAMINATED ARTICLE

IDEMITSU KOSAN CO., LTD.,...

1. A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, whereina reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

US Pat. No. 10,340,354

MANUFACTURING METHOD OF THIN-FILM TRANSISTOR (TFT) ARRAY SUBSTRATE

BOE TECHNOLOGY GROUP CO.,...

1. A method of manufacturing a thin-film transistor (TFT) array substrate, comprising:forming a gate layer, a gate insulating layer, an oxide semiconductor layer, a source/drain electrode layer and a transparent conductive layer on a base substrate,
wherein the forming of the source/drain electrode layer and the transparent conductive layer includes:
forming a transparent conductive film and a first metallic film on the oxide semiconductor layer in sequence, to form a stack layer of the transparent conductive film and the first metallic film, in which the transparent conductive film contacts the oxide semiconductor layer;
forming source electrodes, drain electrodes and pixel electrodes by performing a single patterning process on the stack layer of the transparent conductive film and the first metallic film; and
forming a protective layer film on the first metallic film, and forming the pixel electrodes, the source electrodes, the drain electrodes, and the protective layer by performing a single patterning process on the transparent conductive film, the first metallic film, and the protective layer film;
wherein the protective layer film includes at least one of ITO IZO, IGZO, GZO, or carbon nanotube conductive films.

US Pat. No. 10,340,353

EPITAXIAL METALLIC TRANSITION METAL NITRIDE LAYERS FOR COMPOUND SEMICONDUCTOR DEVICES

The United States of Amer...

9. A semiconductor device, comprising:a substrate;
an epitaxial metal layer selected from the group consisting of TaNx, NbNx, WNx, MoNx, TMN ternary compounds, and combinations thereof; and
at least one epitaxial semiconductor layer comprising a semiconductor material selected from the group consisting of SiC or AlN;
wherein the in-plane lattice constants of the substrate, the epitaxial metal layer, and the epitaxial semiconductor layer are within 2% of one another; and
wherein the epitaxial metal layer is in direct contact with the substrate and the at least one epitaxial semiconductor layer is in direct contact with the epitaxial metal layer to form an epitaxial metal/semiconductor heterostructure, or the at least one epitaxial semiconductor layer is in direct contact with the substrate and the epitaxial metal layer is in direct contact with the at least one epitaxial semiconductor layer to form an epitaxial metal/semiconductor heterostructure.

US Pat. No. 10,340,352

FIELD-EFFECT TRANSISTORS WITH A T-SHAPED GATE ELECTRODE

GLOBALFOUNDRIES Inc., Gr...

1. A method of forming a field-effect transistor, the method comprising:forming a first dielectric layer on a semiconductor layer;
forming a second dielectric layer on the first dielectric layer;
forming a first opening extending vertically through the first dielectric layer and the second dielectric layer;
after the first opening is formed, laterally recessing the second dielectric layer relative to the first dielectric layer with a selective etching process so as to widen a first portion of the first opening extending vertically through the second dielectric layer relative to a second portion of the first opening extending vertically through the first dielectric layer;
after the second dielectric layer is laterally recessed, forming a gate dielectric layer on an area of a top surface of the semiconductor layer exposed through the first portion of the first opening in the first dielectric layer; and
after forming the gate dielectric layer, forming a gate electrode that includes a wide section in the first portion of the first opening and a narrow section in the second portion of the first opening,
wherein the narrow section of the gate electrode is in contact with the gate dielectric layer, and the gate dielectric layer is arranged between the narrow section of the gate electrode and the top surface of the semiconductor layer.

US Pat. No. 10,340,351

SEMICONDUCTOR DEVICE

ROHM CO., LTD, Kyoto (JP...

1. A semiconductor device comprising:a first conductivity type SiC substrate;
a first conductivity type epitaxial layer formed on a side of one surface of the SiC substrate;
a second conductivity type body region formed at a surface portion of the epitaxial layer;
a gate trench formed in the epitaxial layer so as to penetrate the body region from a surface of the epitaxial layer;
a gate insulating film formed on an inner surface of the gate trench; and
a gate electrode formed on the gate insulating film, wherein
the gate electrode is made of a same material as the body region.

US Pat. No. 10,340,349

METHOD OF FORMING SEMICONDUCTOR STRUCTURE

United Microelectronics C...

1. A method of forming a semiconductor structure, comprising:providing a substrate having a first area and a second area, wherein a first surface of the first area is lower than a second surface of the second area;
sequentially forming a first insulating layer, a first gate, a first dielectric layer and a first dummy gate on the first surface of the first area;
forming a second dielectric layer and a second dummy gate on the second surface of the second area;
forming an inter-layer dielectric layer around the first gate, the first dummy gate and the second dummy gate;
removing the first dummy gate and the second dummy gate, so as to form a first trench and a second trench in the inter-layer dielectric layer; and
filling a second gate and a third gate respectively in the first trench and the second trench,
wherein the method further comprises forming a fourth gate on the first surface at one side of the first gate, and the fourth gate and the first gate are formed simultaneously, and
wherein the method of forming the first gate, the first dummy gate, the second dummy gate and the fourth gate comprises:
sequentially forming a first insulating material layer and a first conductive layer on the substrate in the first area;
forming a first dielectric material layer on the first conductive layer in the first area and forming a second dielectric material layer on the substrate in the second area;
forming a second conductive layer on the first dielectric material layer and on the second dielectric material layer;
performing a first patterning step, so as to form a first stacked structure and a second stacked structure on the substrate in the first area, wherein the first stacked structure comprises the first insulating layer, the first gate, the first dielectric layer and the first dummy gate; and
performing a second patterning step, so as to form the second dielectric layer and the second dummy gate on the substrate in the second area, wherein during the second patterning step, a portion of the second stacked structure is simultaneously removed and the fourth gate remains.

US Pat. No. 10,340,343

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

TAIWAN SEMICONDUCTOR MANU...

1. A semiconductor device, comprising:a semiconductor substrate;
a gate electrode over the semiconductor substrate;
a channel region between the semiconductor substrate and the gate electrode;
a pair of source/drain regions adjacent to two opposing sides of the channel region in a channel length direction; and
a threshold voltage adjusting region adjacent to two opposing sides of the channel region in a channel width direction, wherein the threshold voltage adjusting region and the channel region have the same doping type, and a depth of the threshold voltage adjusting region is greater than a depth of the pair of source/drain regions.

US Pat. No. 10,340,337

DIODE STRUCTURE OF A POWER SEMICONDUCTOR DEVICE

Infineon Technologies AG,...

1. A power semiconductor device comprising a semiconductor body coupled to each of a first load terminal and a second load terminal, wherein the semiconductor body comprises:a drift region with dopants of a first conductivity type;
at least a diode structure configured to conduct a load current between the terminals and comprising an anode port electrically connected to the first load terminal and a cathode port electrically connected to the second load terminal;
a field stop region with dopants of the first conductivity type at a higher dopant concentration than the drift region, the field stop region being arranged between the cathode port and the drift region;
wherein the cathode port comprises:
first port sections with dopants of the first conductivity type and second port sections with dopants of a second conductivity type complementary to the first conductivity type, a transition between each of the second port sections and the field stop region forming a respective pn-junction that extends along a first lateral direction, wherein a diffusion voltage of a respective one of the pn-junctions in an extension direction perpendicular to the first lateral direction is greater than a lateral voltage drop laterally overlapping with the lateral extension of the respective pn-junction.

US Pat. No. 10,340,336

POWER SEMICONDUCTOR DEVICE HAVING FULLY DEPLETED CHANNEL REGIONS

Infineon Technologies AG,...

1. A power semiconductor device, comprising:a semiconductor body coupled to a first load terminal structure and a second load terminal structure;
an active cell field implemented in the semiconductor body and configured to conduct a load current;
a plurality of first cells and a plurality of second cells provided in the active cell field, each being electrically connected to the first load terminal structure on one side and electrically connected to a drift region of the semiconductor body on another side, the drift region having a first conductivity type;
wherein:
each first cell comprises a first mesa, the first mesa including: a first port region having the first conductivity type and being electrically connected to the first load terminal structure, and a first channel region being coupled to the drift region;
each second cell comprises a second mesa, the second mesa including: a second port region having the second conductivity type and being electrically connected to the first load terminal structure, and a second channel region being coupled to the drift region;
wherein the first channel region has the first conductivity type and wherein the second channel region has the second conductivity type;
each first cell is configured to induce a current path for charge carriers of the first conductivity type within the first channel region; and
each second cell is configured to induce an accumulation channel for charge carriers of the second conductivity type within the second channel region.

US Pat. No. 10,340,335

METHOD OF FORMING A SEMICONDUCTOR DEVICE

Infineon Technologies AG,...

1. A method of forming a semiconductor device, the method comprising:forming a trench in a semiconductor body at a first surface of the semiconductor body;
introducing first dopants into a first region at a bottom side of the trench by ion implantation;
subsequent to introducing the first dopants, forming a first filling material in the trench, wherein the first filling material is formed over the first region including the first dopants;
introducing second dopants into a second region at a top side of the first filling material, wherein introducing the second dopants into the second region includes introducing the second dopants into the first filling material at an entire top surface of the first filling material located at the top side of the first filling material, and introducing the second dopants is performed subsequent to forming the first filling material in the trench; and
thermal processing of the semiconductor body configured to intermix, within the first filling material, the first and the second dopants from the first and the second regions by a diffusion process along a vertical direction perpendicular to the first surface;
wherein the semiconductor body is a silicon carbide semiconductor body and the first and the second dopants comprise boron or gallium; and
wherein a ratio of a diffusion coefficient of the first and the second dopants in the first filling material and a diffusion coefficient of the first and the second dopants in the semiconductor body is greater than two with respect to a temperature of 1100° C.

US Pat. No. 10,340,333

III-NITRIDE POWER SEMICONDUCTOR DEVICE

Infineon Tecimologies Ame...

1. A power semiconductor device, comprising:a III-nitride heterojunction body that includes a first III-nitride body and a second III-nitride body having a different band gap than that of said first III-nitride body;
a first power electrode comprising a conductive material coupled to said second III-nitride body;
a second power electrode comprising said conductive material coupled to said second III-nitride body;
a gate arrangement including a gate electrode disposed between said first and said second power electrodes;
a conductive channel that includes a two-dimensional electron gas (2DEG) that in a conductive state includes a reduced charge region produced by an implanted region in said second III-nitride body under said gate electrode, wherein said reduced charge region is less conductive than regions of said 2DEG adjacent each side of said reduced charge region;
said implanted region having implanted charge in said second III-nitride body, said implanted charge configured to repel electrons in said 2DEG under and beyond edges of said gate electrode;
said reduced charge region extending beyond at least one of said edges of said gate electrode and comprising negative charge which repels negative carriers in a region below said gate arrangement, said conductive channel being devoid of said negative charge in said regions of said 2DEG adjacent each side of said reduced charge region.

US Pat. No. 10,340,331

METHODS OF FORMING AN ARRAY OF CAPACITORS, METHODS OF FORMING AN ARRAY OF MEMORY CELLS INDIVIDUALLY COMPRISING A CAPACITOR AND A TRANSISTOR, ARRAYS OF CAPACITORS, AND ARRAYS OF MEMORY CELLS INDIVIDUALLY COMPRISING A CAPACITOR AND A TRANSISTOR

Micron Technology, Inc., ...

1. A method of forming an array of memory cells individually comprising a capacitor and an elevationally-extending transistor, comprising:forming elevationally-extending transistors over columns of data/sense lines, individual of the transistors comprising a lower source/drain region directly electrically coupled to one of the data/sense lines, the transistors comprising rows of access lines above the data/sense lines, individual of the access lines extending laterally across and operatively laterally adjacent a lateral side of transistor channels and interconnecting the transistors in that row;
forming elevationally-extending and longitudinally-elongated capacitor electrode lines, individual of the capacitor electrode lines being common to and a shared one of two capacitor electrodes of individual capacitors longitudinally along a line of capacitors being formed longitudinally along a line of the transistors;
forming a capacitor insulator over a pair of laterally-opposing sides of and longitudinally along individual of the capacitor electrode lines and over the tops of the individual capacitor electrode lines;
forming an elevationally-extending conductive line over the capacitor insulator longitudinally along each of a pair of laterally-opposing sides of the individual capacitor electrode lines, individual of the conductive lines on one of the laterally-opposing sides of the individual capacitor electrode lines being directly electrically coupled to upper source/drain regions of individual transistors longitudinally along that line of transistors, laterally-extending conductive material atop the capacitor insulator that is over the tops of the respective individual capacitor electrode lines directly electrically coupling together the conductive lines that are along each of a pair of laterally-opposing sides of the respective individual capacitor electrode lines; and
cutting laterally through the conductive lines on each of the laterally-opposing sides of the individual capacitor electrode lines and through the laterally-extending conductive material to form spaced individual other of the two capacitor electrodes of the individual capacitors, the cutting forming individual of the other capacitor electrodes to comprise an elevationally-extending first member directly electrically coupled to and extending elevationally upward from the upper source/drain regions of the individual transistors longitudinally along that line of transistors on the one laterally-opposing side of the individual capacitor electrode lines, the cutting forming individual of the other capacitor electrodes to comprise an elevationally-extending second member laterally spaced from the first member on the other laterally-opposing side of the individual capacitor electrode lines, and the cutting forming the laterally-extending conductive material as part of the spaced individual other of the two capacitor electrodes of the individual capacitors.

US Pat. No. 10,340,330

PRECISION BEOL RESISTORS

International Business Ma...

1. A semiconductor structure comprising:a lower interconnect level including first metal-containing structures embedded within a first interconnect dielectric material layer;
an upper interconnect level located above the lower interconnect level and comprising second metal-containing structures embedded within a second interconnect dielectric material layer;
a resistor present in the upper interconnect level, wherein the resistor has a bottommost surface that is coplanar with a topmost surface of the first interconnect dielectric material layer and a topmost surface that is located entirely beneath a topmost surface of the second interconnect dielectric material layer; and
a continuous dielectric cap located directly on an entirety of the topmost surface of the resistor, directly on a topmost surface of the second interconnect dielectric material layer, and directly on a topmost surface of the second metal-containing structures.

US Pat. No. 10,340,328

DISPLAY DEVICE

Japan Display Inc., Toky...

1. A display device comprising:a first layer having a first surface and a second surface, the second surface being an opposite side surface of the first surface of the first layer, the first layer arranged with a plurality of pixels on the first surface of the first layer, the plurality of pixels having a display element including a transistor and a first wiring connected to the transistor;
a second layer having a third surface, the third surface facing the second surface;
a first contact hole reaching the first surface from the second surface;
a first electrode arranged in the first contact hole;
a second contact hole arranged in the second layer;
a second electrode arranged in the second contact hole;
a third contact hole arranged in the second layer; and
a third electrode arranged in the third contact hole, wherein
the transistor is located without overlapping the first wiring in a plan view,
at least a part of the first wiring is located directly on the first contact hole,
the first wiring and the first electrode are connected,
the first electrode reaches the first surface from the second surface,
the first electrode and the second electrode are electrically connected, and
the second electrode and the third electrode are electrically connected.

US Pat. No. 10,340,324

ORGANIC LIGHT-EMITTING DIODE DISPLAY

SAMSUNG DISPLAY CO., LTD....

1. An organic light-emitting diode (OLED) display, comprising:a substrate;
a scan line formed over the substrate and configured to provide a scan signal;
a data line crossing the scan line and configured to provide a data voltage;
a driving voltage line crossing the scan line and configured to provide a driving voltage;
a switching transistor electrically connected to the scan line and the data line;
a driving transistor electrically connected to the switching transistor and including a driving gate electrode and a driving channel overlapping each other in a depth dimension of the OLED display;
a first storage capacitor overlapping the driving channel in the depth dimension and including a first lower storage electrode and a portion of the driving voltage line;
a second storage capacitor separated from the first storage capacitor, overlapping the portion of the driving voltage line in the depth dimension, and including a second lower storage electrode and a second upper storage electrode overlapping the second lower storage electrode in the depth dimension, wherein the second upper storage electrode is formed on the same layer as the first lower storage electrode; and
an OLED electrically connected to the driving transistor.

US Pat. No. 10,340,282

SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF

United Microelectronics C...

1. A semiconductor memory device, comprising:a substrate, having a plurality of cell regions, wherein the cell regions are parallel and extending along a first direction;
a plurality of shallow trench isolation (STI) structures, disposed in the substrate, extending along the first direction to isolate the cell regions, wherein the STI structures have a uniform height lower than the substrate in the cell regions;
a selection gate line, extending along a second direction and crossing over the cell regions and the STI structures; and
a control gate line, adjacent to the selection gate line in parallel extending along the second direction, also crossing over the cell regions and the STI structures, wherein the selection gate line and the control gate line together form a two-transistor (2T) memory cell.

US Pat. No. 10,340,247

METHOD FOR FORMING HYBRID BONDING WITH THROUGH SUBSTRATE VIA (TSV)

Taiwan Semiconductor Manu...

1. A method for forming a semiconductor device structure, comprising:forming a first conductive material in a first polymer material in a first wafer;
forming a second conductive material in a second polymer material in a second wafer;
hybrid bonding the first wafer and the second wafer to form a hybrid bonding structure, wherein the hybrid bonding structure comprises a metallic bonding interface and a polymer-to-polymer bonding structure; and
forming at least one through-substrate via (TSV) through the second wafer, wherein the TSV extends from a bottom surface of the second wafer to a metallization structure of the first wafer, wherein the metallization structure is in direct contact with the polymer-to-polymer bonding structure.

US Pat. No. 10,340,235

SEMICONDUCTOR PACKAGE WITH THREE-DIMENSIONAL ANTENNA

MEDIATEK INC., Hsin-Chu ...

1. A semiconductor package, comprising:a package substrate having a first region and a second region defined between an edge of the package substrate and an edge of the first region;
a semiconductor die disposed on the package substrate in the first region;
a conductive shielding element disposed on the package substrate and covering the semiconductor die; and
a three-dimensional (3D) antenna, comprising:
a planar structure portion disposed on the package substrate in the second region; and
a bridge structure portion above the planar structure portion and connected thereto,
wherein the first bar pattern has an end in the first region to serve as a feeding point of the 3D antenna, and
wherein the conductive shielding element has an opening formed in a sidewall thereof, such that the first bar pattern passes through the conductive shielding element via the opening.

US Pat. No. 10,340,232

WIRING SUBSTRATE

SHINKO ELECTRIC INDUSTRIE...

1. A wiring substrate comprising:a coil wiring;
a magnetic layer that is in contact with a lower surface of the coil wiring, wherein the magnetic layer includes an opening extending through in a thickness-wise direction;
a first insulation layer covering the coil wiring, an upper surface of the magnetic layer, and a wall surface of the opening; and
a signal wiring structure that transmits a signal of a semiconductor element in the wiring substrate when the semiconductor element is mounted on the wiring substrate, wherein the signal wiring structure is formed so that the signal of the semiconductor element travels through the opening of the magnetic layer, wherein
the signal wiring structure includes
a first wiring portion located on an upper surface of the first insulation layer, and
a first via wiring located inward from the opening of the magnetic layer and connected to the first wiring portion, wherein
the first insulation layer includes an opening extending through in the thickness-wise direction and located inward from the opening of the magnetic layer,
the first via wiring is filled in the opening of the first insulation layer,
the first insulation layer is filled in a gap between the first via wiring and the wall surface of the opening of the magnetic layer, and
the magnetic layer is not in contact with the signal wiring structure.

US Pat. No. 10,340,212

SEMICONDUCTOR PACKAGE STRUCTURE HAVING A HEAT DISSIPATION STRUCTURE

ADVANCED SEMICONDUCTOR EN...

1. A semiconductor substrate, comprising:a dielectric layer having a surface;
a heat dissipation structure surrounded by the dielectric layer, the heat dissipation structure defining a space and including a liquid in the space; and
a first patterned conductive layer disposed adjacent to the surface of the dielectric layer and thermally connected with the heat dissipation structure.

US Pat. No. 10,340,195

METHOD TO CO-INTEGRATE SIGE AND SI CHANNELS FOR FINFET DEVICES

STMICROELECTRONICS, INC.,...

1. A device, comprising:a substrate;
an array of n-type fins extending from a surface of the substrate, the n-type fins including a first semiconductor material having n-type conductivity;
an array of p-type fins extending from the surface of the substrate, the array of p-type fins being adjacent to the array of n-type fins, the p-type fins including a second semiconductor material that is different from the first semiconductor material, the second semiconductor material having p-type conductivity; and
an insulator on the surface of the substrate, the insulator separating adjacent fins from one another.

US Pat. No. 10,340,137

MONOLAYER FILM MEDIATED PRECISION FILM DEPOSITION

TOKYO ELECTRON LIMITED, ...

1. A method of forming a thin film, comprising:forming a functionalized surface by treating at least a portion of an exposed surface on a substrate with an adsorption-promoting agent to alter a functionality of the exposed surface and cause subsequent adsorption of an organic precursor;
thereafter, adsorbing the organic precursor to the functionalized surface to form a carbon-containing film; and
forming a mixed film by exposing at least a portion of a surface of the carbon-containing film to an ion flux to mix the carbon-containing film with a material of the substrate, wherein the material of the substrate is located underneath the carbon-containing film.

US Pat. No. 10,340,133

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

Mitsubishi Electric Corpo...

1. A method for fabricating a semiconductor device comprising:forming a silicon oxide film having at least one opening, on a silicon substrate;
forming a structural member formed of a material less prone to be etched by hydrofluoric acid than said silicon oxide film, said structural member being provided on said silicon oxide film and reaching said silicon substrate in said opening; and
performing wet etching using hydrofluoric acid, on said silicon substrate on which said silicon oxide film and said structural member are provided, an interface between said silicon oxide film and said structural member being exposed to hydrofluoric acid in said performing wet etching,
wherein
said structural member includes an insulation film,
an interface between said silicon oxide film and said insulation film is exposed to hydrofluoric acid in said performing wet etching, and
performing said wet etching results in a portion of an upper surface of said silicon oxide film to one side of said opening being etched, and another portion of said upper surface of said silicon oxide film to another side of said opening not being etched.

US Pat. No. 10,340,088

THIN-FILM CAPACITOR

TDK CORPORATION, Tokyo (...

1. A thin-film capacitor comprising:a substrate made of a metal material;
a capacitor portion formed partially on one surface of the substrate, the capacitor having a stacked structure from stacking an electrode layer and a dielectric layer alternately;
an insulating layer covering a forming region and a non-forming region, the capacitor portion formed in the forming region and not formed in the non-forming region on the one surface of the substrate;
an electrode terminal disposed on the insulating layer; and
a via conductor configured to penetrate the insulating layer in a thickness direction of the insulating layer and connect the electrode terminal to one of the substrate and the electrode layer of the capacitor portion,
wherein: the substrate is divided into a plurality of parts by a penetration portion penetrating the substrate in a thickness direction of the substrate, and includes a frame portion along an outer edge of the substrate and an electrode portion located inside the frame portion when viewed from the other surface side of the substrate, the electrode portion facing the electrode layer of the capacitor portion through the dielectric layer of the capacitor portion; and
the frame portion includes a communicating channel that extends in a direction orthogonal to the thickness direction of the substrate to connect a frame inside and a frame outside.

US Pat. No. 10,340,083

ELECTRONIC COMPONENT

MURATA MANUFACTURING CO.,...

1. An electronic component that is able to be mounted on a mounting substrate including a pair of first edge portions that faces each other, and a pair of second edge portions that is perpendicular or substantially perpendicular to the pair of first edge portions and faces each other, the mounting substrate including a structure that allows at least any one of the electronic component, a first electronic component, and a second electronic component to be mounted thereon;the first electronic component including:
a first laminate including a plurality of first dielectric layers and a plurality of first inner electrode layers, which are laminated, a pair of first principal surfaces facing each other in a lamination direction, a pair of first side surfaces facing each other in a width direction perpendicular or substantially perpendicular to the lamination direction, and a pair of first end surfaces facing each other in a length direction perpendicular or substantially perpendicular to the lamination direction and the width direction; and
a pair of first external electrodes each extending from a corresponding one of the pair of first end surfaces to a portion of the pair of first principal surfaces and to a portion of the pair of first side surfaces;
the second electronic component including:
a second laminate including a plurality of second dielectric layers and a plurality of second inner electrode layers, which are laminated, a pair of second principal surfaces facing each other in a lamination direction, a pair of second side surfaces facing each other in a width direction perpendicular or substantially perpendicular to the lamination direction, and a pair of second end surfaces facing each other in a length direction perpendicular or substantially perpendicular to the lamination direction and the width direction; and
a pair of second external electrodes each extending from a corresponding one of the pair of second end surfaces to a portion of the pair of second principal surfaces and to a portion of the pair of second side surfaces; wherein
a dimension of the first electronic component in the length direction is designated as L1, a dimension of the first electronic component in the width direction is designated as W1, a dimension of the second electronic component in the length direction is designated as L2, and a dimension of the second electronic component in the width direction is designated as W2;
a length W3 of the pair of first edge portions is a least common multiple of the W1 and the W2; and
a length L3 of the pair of second edge portions is a least common multiple of the L1 and the L2;
the electronic component including:
a third laminate including a plurality of third dielectric layers and a plurality of third inner electrode layers, which are laminated, a pair of third principal surfaces facing each other in a lamination direction, a pair of third side surfaces facing each other in a width direction perpendicular or substantially perpendicular to the lamination direction, and a pair of third end surfaces facing each other in a length direction perpendicular or substantially perpendicular to the lamination direction and the width direction; and
a pair of third external electrodes each extending from a corresponding one of the pair of third end surfaces to a portion of the pair of third principal surfaces and to a portion of the pair of third side surfaces; wherein
a dimension of the electronic component in the width direction is any one of the W1 and the W2; and
a dimension of the electronic component in the length direction is the L2 when the dimension of the electronic component in the width direction is the W1; and
a dimension of the electronic component in the length direction is the L1 when the dimension of the electronic component in the width direction is the W2.