US Pat. No. 10,461,496

SELF-ALIGNING LASER ASSEMBLY

Dermal Photonics Corporat...

1. A system for providing passive alignment of a laser and a lens, comprising:a submount assembly;
a laser diode coupled to the submount assembly;
a mounting tube with a mating key geometry or geometries that extend along a length of an interior of the mounting tube and receive the submount assembly and mates with a mating groove geometry or geometries of the submount assembly; and
a lens coupled to one end of the mounting tube, wherein:
the one end of the mounting tube is not radially symmetric such that the lens is coupled to the one end in one specific radial position, wherein the one end of the mounting tube has an outermost exterior surface that includes a lens cutout that extends from one side of the exterior geometry to another side of the exterior geometry and that corresponds to a geometry of the lens so that the lens is rotationally locked to the mounting tube in the one specific radial position to align the lens with the laser diode,
the submount assembly is mounted inside the mounting tube with mating geometries dictating a fixed rotational alignment between the lens and the mounting tube, and
the one specific radial position of the lens at the one end of the mounting tube corresponds to the interior geometry of the mounting tube to establish how the submount assembly is radially fixed to the mounting tube, such that the lens is radially aligned with respect to both the submount and the laser diode to provide an optical alignment of the lens with respect to the laser diode.

US Pat. No. 10,461,490

RADIATION SOURCE

ASML Netherlands B.V., V...

1. A supercontinuum radiation source comprising:a radiation source operable to produce a pulsed radiation beam;
an optical amplifier configured to receive the pulsed radiation beam and increase an intensity of the pulsed radiation beam so as to produce an amplified pulsed radiation beam, the optical amplifier comprising a gain medium and a pump power source; and
an optical medium configured to receive the amplified pulsed radiation beam and to broaden a spectrum of the amplified pulsed radiation beam so as to generate a supercontinuum radiation beam;
wherein the pump power source of the optical amplifier is configured to supply a pump radiation beam to the gain medium, an intensity of the pump radiation beam being periodic and having a pump frequency, and
wherein the pump frequency is an integer multiple of the frequency of the pulsed radiation beam.

US Pat. No. 10,461,489

PHOTONIC DEVICES AND METHODS OF USING AND MAKING PHOTONIC DEVICES

Massachusetts Institute o...

1. A method of making a photonic device, the method comprising: (A) depositing dielectric material having a first refractive index on a substrate to form a dielectric layer having an upper surface; (B) forming at least one dielectric band having a second refractive index greater than the first refractive index within the dielectric layer about 0 nm to about 500 nm from the upper surface; and (C) depositing gain material having a third refractive index greater than the first refractive index on at least a portion of the upper surface of the dielectric layer over the at least one dielectric band to form a gain layer configured to guide an optical pump beam and an optical signal beam along a longitudinal axis of the at least one dielectric-band—with a majority of the optical pump beam confined within the gain layer.

US Pat. No. 10,461,488

LASER DEVICE PROVIDED WITH FUNCTION OF PREDICTING OCCURRENCE OF CONDENSATION

FANUC CORPORATION, Yaman...

1. A laser device comprising:a laser resonator generating laser light,
a cooling water feed device feeding cooling water to the laser resonator for cooling the laser resonator,
a water temperature gauge measuring a temperature of cooling water fed to the laser resonator,
a temperature/humidity adjusting device adjusting at least one of a temperature and humidity of a space in which the laser resonator is set,
a thermometer measuring a temperature of air adjusted by the temperature/humidity adjusting device,
a hygrometer measuring a humidity of air adjusted by the temperature/humidity adjusting device,
a controlling part determining a control target temperature of cooling water which is fed to the laser resonator and calculating a reference temperature or a reference humidity for judging if the cooling water feed device may feed cooling water based on the temperature measured by the thermometer and the humidity measured by the hygrometer,
wherein the reference temperature is a dew point in the space in which the laser resonator is placed, or a value calculated based on the dew point, and
wherein the cooling water feed device is configured to repeat the following steps a plurality of times until the temperature of cooling water reaches the control target temperature:
1) start or continue the feed of cooling water after a command for starting up the laser resonator has been output and when:
a) the temperature of the cooling water is greater than the control target temperature, and
b) the temperature of the cooling water is greater than or equal to the reference temperature, and
2) stop the feed of cooling water when:
a) the temperature of the cooling water is less than or equal to the control target temperature, or
b) the temperature of the cooling water is less than the reference temperature.

US Pat. No. 10,461,486

DIE AND PRESS APPARATUS INCLUDING DIE

JAPAN AVIATION ELECTRONIC...

1. A die that crimps a contact in cooperation with a mating die to thereby fix the contact on an electric wire, comprising:a base portion;
a protruding portion that is formed on said base portion in a manner protruding upward from said base portion, and can be inserted in a receiving space of the mating die; and
a wall portion that is connected to front surfaces or rear surfaces of said base portion and said protruding portion,
wherein said wall portion extends further upward than said base portion, and extends further in at least one of leftward and rightward directions than said protruding portion,
wherein an upper surface of said protruding portion, which is configured to support the contact, is formed with a dent having an upper portion and a lower portion,
wherein said wall portion is formed with a flat surface that is located at a level lower than the upper portion of said dent and at a same level as the lower portion of said dent, the flat surface being adjacent to the upper surface in a front-rear direction of said protruding portion, and
wherein one end of the flat surface in the front-rear direction is formed with a cutting blade for cutting a supporting arm portion of a carrier that supports the contact.

US Pat. No. 10,461,485

METHOD AND APPARATUS OF POWERING AN ELECTRONIC DEVICE USING A REMOVABLE POWER SUPPLY

Ecolink Intelligent Techn...

1. An electronic device, comprising:a first housing in which is disposed a power adapter that converts an AC voltage signal to a DC low-voltage output signal, the power adapter comprising a prong connector that extends outwardly from the first housing for receiving the AC voltage signal from a conventional AC power outlet, and an output connector supported by the first housing for outputting the DC low-voltage output signal; and
a second housing in which is disposed electronic circuitry that is operable using the DC low-voltage output signal, wherein the second housing comprises a depression that is arranged to receive and releasably hold the first housing and wherein the electronic circuitry comprises an input connector that is positioned relative to the depression so as to cooperatively, electrically couple with the output connector when the first housing is received in its entirety within the depression.

US Pat. No. 10,461,482

ELECTRICALLY-CHARGED OUTLET

1. An electrically charged outlet assembly, comprising:an outlet box defining an interior and a front open face comprising:
a plurality of outlet box upper retaining apertures disposed upon a top side of said outlet box;
a plurality of outlet box lower retaining apertures disposed on a bottom side of said outlet box;
a first power wire aperture located on a first side of said outlet box;
a second power wire aperture located on a second side of said outlet box;
a third power wire aperture located on a third side of said outlet box; and
a fourth power wire aperture is located on a fourth side of said outlet box;
wherein within said interior of said outlet box is disposed against a rear face of said interior of said outlet box with a neutral wire terminal fastener, a hot wire terminal fastener, or a ground wire terminal fastener;
further comprising a ground terminal fastener slot secured within said outlet box and located against one interior outlet box wall adjacent said neutral terminal fastener slot, said ground terminal fastener slot is in electrical communication with said ground wire terminal fastener with a ground bridge;
wherein each of said slots are shaped to permit a respective terminal outlet terminal fastener to removably reside therein and each of said slots includes a metallic clip which is in electrical communication with one of a plurality of power wires; and
wherein said metallic clip is capable of transmitting an electrical charge.

US Pat. No. 10,461,481

ELECTRONIC CONTROL UNIT FOR CONTROLLING ROTARY ELECTRIC MACHINE

JTEKT CORPORATION, Osaka...

1. An electronic control unit that controls a rotary electric machine, the electronic control unit comprising:a housing including a wall defining an accommodation space, and a base extending from the wall into the accommodation space;
a circuit board disposed on the base in the accommodation space;
an electrical connection module disposed at a position different from the circuit board on the base in the accommodation space and electrically connected to the circuit board;
a first connector group electrically connected to the electrical connection module; and
a second connector group disposed on the wall and electrically connected to the circuit board, wherein:
the first connector group and the second connector group are arranged in a first direction along the wall;
the base, the electrical connection module, and the circuit board respectively have a first positioning hole, a second positioning hole, and a third positioning hole for positioning relative to each other;
a first positioning pin is insertable into an opening of the first positioning hole through the second positioning hole; and
a second positioning pin is insertable into another opening of the first positioning hole through the third positioning hole.

US Pat. No. 10,461,474

TECHNOLOGY FOR MAINTAINING SECURE CONNECTIONS OF ELECTRONIC CABLING

INTERNATIONAL BUSINESS MA...

1. An apparatus for a chassis having a port mounted on a side of the chassis and connected to electronics in the chassis, the apparatus comprising:first and second supports mounted on the chassis side on opposing sides of the port; and
a strap of a predetermined length with first and second ends of the length respectively connected to the first and second supports, wherein the strap defines a slot along a portion of its length for holding a cable connected to a plug that matches the port, wherein the supports are of such lengths that with the supports mounted on the chassis side on opposing sides of the port, the strap connected to the respective supports, the cable in the slot and the plug mated with the port, at least the plug displaces a central portion of the strap, wherein the displacement produces a spring force toward the chassis such that the strap clamps the plug into engagement with the port.

US Pat. No. 10,461,472

ELECTRICAL CONNECTOR

Tyco Electronics AMP Ital...

1. An electrical connector, comprising:a first connector;
a second connector matable with the first connector;
an elastic clip mounted on the first connector and movable between an engagement position and a disengagement position, the elastic clip is coupled to the second connector in the engagement position to keep the second connector mated with the first connector, and the elastic clip enables decoupling of the first connector and the second connector in the disengagement position, the elastic clip is U-shaped and has a central portion and a pair of elastic branches each having an end portion; and
a safety locking member slidably mounted on the first connector and movable between a pre-locking position and a locking position, the safety locking member has a central elastic arm with an engagement tooth, the central elastic arm is disposed on a rear face of the safety locking member opposite a front face of the safety locking member, the front face of the safety locking member contacting the central portion of the elastic clip in the locking position and preventing movement of the elastic clip from the engagement position toward the disengagement position.

US Pat. No. 10,461,470

CIRCUIT CARD ASSEMBLIES FOR A COMMUNICATION SYSTEM

TE CONNECTIVITY CORPORATI...

1. A circuit card assembly for a communication system comprising:a printed circuit board (PCB) having a first surface and a second surface and a mating edge between the first and second surfaces, the PCB having a slot extending inward from the mating edge configured to receive a second PCB of a second circuit card assembly in a board loading direction perpendicular to the mating edge, the PCB having a mounting area on the first surface adjacent the slot; and
an electrical connector mounted to the first surface at the mounting area configured for mating with a second electrical connector of the second circuit card assembly, the electrical connector having a receptacle housing fixed relative to the PCB and having a cavity, the electrical connector having a mating housing received in the cavity of the receptacle housing, the mating housing being movable relative to the receptacle housing, the electrical connector having contacts held by the mating housing and being movable relative to the receptacle housing with the mating housing, the contacts having mating interfaces configured for mating with contacts of the second electrical connector;
wherein the receptacle housing is configured to be coupled to the second electrical connector as the second PCB is loaded in the board loading direction;
wherein the mating housing is movable within the receptacle housing in a connector loading direction along a connector loading axis parallel to the board loading direction and the mating housing being movable in the receptacle housing in a connector mating direction along a connector mating axis perpendicular to the connector loading axis; and
wherein the contacts of the electrical connector are mated with the contacts of the second electrical connector in a contact mating direction parallel to the connector mating axis.

US Pat. No. 10,461,469

PLUG AND SOCKET ARRANGEMENT FOR AN INFORMATION ROBOT APPARATUS

Wenling Haoda Electric Ap...

1. A plug and socket arrangement for an information robot apparatus, comprisinga robot body;
a plug body;
a socket body;
a plug groove arranged in one end face of the socket body;
a wire electrically connected with the robot body is arranged on one side of the plug body, and the other side of the plug body is provided with a plug column which is used to plug and connect with the plug groove;
an inclined plane top pressing block is arranged on the side, away from the plug body, of the plug column;
wherein a plug pin is fixedly arranged on an end surface thereof, away from the plug column, of the inclined plane top pressing block;
a lock recess is arranged in a top end surface of the plug column;
a first sliding cavity extending upwards and downwards communicated with the plug groove;
a second sliding cavity which extends to two ends thereof communicated with a bottom extending tail end of the first sliding cavity;
a third sliding cavity which extends upwards and downwards arranged in the socket body on one side of the first sliding cavity;
wherein a bottom extending tail end of the third sliding cavity is communicated with a top extending section of one end of the second sliding cavity;
a transmission cavity extending towards two ends thereof arranged in the socket body on an upper side of the first sliding cavity;
wherein an extending section of one side of the transmission cavity is located at a top corresponding position of the third sliding cavity;
a first sliding block arranged in the first sliding cavity in a sliding fit mode;
a second sliding block arranged in the second sliding cavity in a sliding fit mode;
wherein a first through slot is arranged in the first sliding block;
a first inclined plane block fixedly arranged on an inner top wall of the first through slot for connecting with the lock recess of the plug column in match mode;
a second inclined plane block fixedly arranged at a bottom tail end of the first sliding block;
a driving motor fixedly arranged on the end face of a top wall of the first sliding block;
an inner spline sleeve in rotational engagement with the transmission cavity and the first sliding cavity, of the socket body;
wherein a first pulley extending into the transmission cavity is fixedly arranged at a top wall tail end of the inner spline sleeve;
an outer spline shaft extending downwards in sliding fit connection with the inner spline sleeve;
wherein a bottom extending tail end of the outer spline shaft extends into the first sliding cavity and is in power connection with a top end of the driving motor;
a first spring annularly arranged around the outer spline shaft in the first sliding cavity;
wherein a top end surface of the second sliding block is internally provided with an inclined plane groove held against and connected with the second inclined plane block;
a second through slot which is used for being communicated with the third sliding cavity arranged in the second sliding block and located at one side of the inclined plane groove;
a third inclined plane block fixedly arranged on an inner wall of one side of the second through slot;
wherein a second spring pushes against and connects with one side of the second sliding block in the second sliding cavity;
a third sliding block arranged in the third sliding cavity in a sliding fit mode;
wherein an adjusting threaded rod extending upwards is in threaded fit connection with the third sliding block;
a fourth inclined plane block fixedly arranged at a bottom tail end of the third sliding block;
a rotating shaft in rotational engagement with the transmission cavity and the third sliding cavity, of the socket body;
wherein a second pulley extending into the transmission cavity is fixedly arranged at a top tail end of the rotating shaft;
a driving belt arranged between the second pulley and the first pulley;
wherein a bottom tail end of the rotating shaft extends into the third sliding cavity and is fixedly connected with a top tail end of the adjusting threaded rod in a matched mode;
the plug body is firstly moved to one side of the socket body to make the plug column and the plug groove are opposite to each other;
the plug body is moved towards one side of the socket body so the plug column gradually extends into the plug groove until the inclined plane top pressing block holds against and slides with the first inclined plane block, so that the first inclined plane block drives the first sliding block to overcome the elastic force of the first spring to gradually slide toward a top of the first sliding cavity;
a guide sliding groove is communicated in an inner wall of one side of the third sliding cavity;
wherein a guide sliding block which is fixedly connected with the third sliding block is in sliding fit connection with an interior of the guide sliding groove, and a top end face of the guide sliding block is fixedly provided with a conductive block;
wherein a power supply groove is arranged in an inner top wall of the guide sliding groove opposite to the top of the conductive block;
the conductive block is driven by the guide sliding block to be completely inserted into the power supply groove so automatic and safe power supply is implemented;
a conductive groove is arranged in an inner wall of one side of the plug groove for receiving the plug pin, and the conductive groove is electrically connected with the conductive block;
the driving motor is controlled to drive the adjusting threaded rod to rotate reversely until the third sliding block drives the fourth inclined plane block to extend into the second through slot and the fourth inclined plane block holds against and slides with the third inclined plane block, so that the third inclined plane block drives the second sliding block to overcome the elastic force of the second spring to slide towards one side in the second sliding cavity; meanwhile, the inclined plane groove holds against and slides with the second inclined plane block, so the first sliding block is driven by the second inclined plane block to slide towards the top in the first sliding cavity until the first inclined plane block completely slides out of the lock recess, and it is convenient to take out the plug body.

US Pat. No. 10,461,466

CONNECTOR ASSEMBLY

JAPAN AVIATION ELECTRONIC...

1. A connector assembly comprising:a first connector that has first electrical connection members located on a resin base material; and
a second connector that has second electrical connection members at positions respectively opposed to the first electrical connection members located on a resin base material; wherein
the resin base material of the first and second connectors each include flexible portions,
the first electrical connection members directly contacting flexible portions of the resin base material of the first connector,
the second electrical connection members directly contacting flexible portions of the resin base material of the second connector,
the first connector and the second connector further have locking resin fasteners that are respectively engageable with each other, and are integrated with the respective resin base materials, on mutually-opposed positions,
the locking resin fasteners of the first connector extend so as to form a polygonal shape surrounding the first electrical connection members,
the locking resin fasteners of the second connector extend so as to form a polygonal shape surrounding the second electrical connection members,
the locking resin fasteners which are opposed to each other on the mutually opposed positions have water-tightness when the fasteners are engaged with each other, and
the first electrical connection members and the second electrical connection members are respectively brought into contact with each other by engaging the locking resin fasteners which are respectively opposed to each other.

US Pat. No. 10,461,464

BI-DIRECTIONAL, ROTATING, PRESSURE BULKHEAD PENETRATOR

1. A bulkhead penetrator, comprising:a body having an interior wall and an exterior wall;
an element disposed within the interior wall of the body in a first pressure region, the element having a first pressure;
an inner penetrator configured to permit a transfer of the element from the interior wall of the body past a physical boundary to the exterior wall of the body in a second pressure region having a second pressure, the inner penetrator having an interior surface exposed to the first pressure region and an exterior surface exposed to the second pressure region;
an outer penetrator, wherein the outer penetrator is configured to permit the transfer of the element from the interior wall of the body past the physical boundary to the exterior wall of the body in a third pressure region having a third pressure;
an inner-outer connector that connects the inner penetrator to the outer penetrator; and
at least two sealing mechanisms for the body, the at least two sealing mechanisms being configured to seal the first pressure region from the second pressure region and the third pressure region.

US Pat. No. 10,461,462

ELECTRONICS CHARGING BLOCK HAVING DETACHABLE TENTACLES

1. An electronics charging block system comprising:a body having a plug configured to connect to an electrical outlet;
a tentacle-receiving socket formed in the body that is not in electrical communication with the plug;
a utility tentacle configured to mount to the body and having a shape-retaining bendable arm portion configured to contact an external electronic device and an insertion tip formed at a first end of the arm portion, the insertion tip configured for removable insertion into the tentacle-receiving socket; and
an electrical interface for enabling an electrical connection to be formed between the charging block and the external electronic device, wherein the utility tentacle does not form part of an electrical connection.

US Pat. No. 10,461,459

SWITCHED ELECTRICAL PLUG LOCK

The Chamberlain Group, In...

1. An apparatus for controlling the use of an electrically powered device, the apparatus comprising:an electrical socket having openings configured to receive prongs of an electrical plug of an electrical cord of an electrically powered device;
a housing;
a lock configured to retain the electrical plug in the electrical socket, the lock comprising:
a retaining member configured to engage at least one of the prongs in at least one of the openings of the electrical socket; and
an actuator connected to the retaining member and configured to shift the retaining member from a locked position wherein the retaining member engages the at least one prong in the at least one opening of the electrical socket and inhibits removal of the at least one prong from the at least one opening to an unlocked position wherein the retaining member permits the at least one prong of the electrical plug to be removed from the at least one opening of the electrical socket;
a switch operable to electrically couple the electrical socket with a power source to which the apparatus is coupled;
wireless communication circuitry operatively coupled to the switch and configured to receive a wireless signal indicating an electronic device is within a proximity of the apparatus; and
a controller operatively coupled to the switch, the wireless communication circuitry, and the actuator, the controller configured to, responsive to the wireless signal, cause the switch to electrically couple the power source and the electrical socket and cause the actuator to shift the retaining member from the locked position to the unlocked position and permit the at least one prong to be removed from the at least one opening.

US Pat. No. 10,461,454

PLUG-IN CONTACT AND METHOD FOR PRODUCING A PLUG-IN CONTACT

1. A plug-in contact for making electrical contact with a circuit board by means of plugging the plug-in contact into a contact hole of the circuit board, with two flat contact legs which are resilient relative to one another, and one connecting region, from which the two contact legs extend in the plug-in direction (E) of the plug-in contact, the plug-in contact being punched in one piece out of a metallic flat material,characterized in
that a closed recess is located within the connecting region, bordering the two contact legs,
that the two contact legs, proceeding from the recess, have a distance from one another which increases in the direction toward their free ends, the two contact legs having a spread state relative to one another,
that the two contact legs together have a width which is equal to or only slightly smaller than the diameter of the corresponding contact hole in the circuit board, and
that the point at which the contact legs begin to separate from one another commences at the recess and is established by the recess independently of the production tolerances.

US Pat. No. 10,461,453

POWER PLUG AND SOCKET

WELLS SHIN ELECTRONIC (KU...

1. A power plug, comprising:a body;
at least two Alternating Current, AC, plug terminals fixed inside the body; and
two Direct Current, DC, plug terminals fixed inside the body;
wherein each of the AC plug terminals and each of the DC plug terminals are respectively connected to separate connecting wires;
wherein the body comprises a first body and a second body, wherein the first body and the second body are adaptively joined to each other to form a plurality of mounting structures, and each of the AC plug terminals and each of the DC plug terminals are respectively fixed inside different mounting structures;
wherein a cavity is provided inside the first body and is configured to accommodate a part of the second body; and
wherein the plurality of mounting structures comprise at least two mounting holes and two mounting slots; and wherein the at least two mounting holes are provided inside the second body, each of the AC plug terminals is fixed inside a respective one of the mounting holes, the two mounting slots are provided on a surface of the second body, and each of the DC plug terminals is fixed inside a respective one of the mounting slots.

US Pat. No. 10,461,451

ELECTRONIC DEVICE QUICK RELEASE STRUCTURE

Aplex Technology Inc., N...

1. An electronic device quick release structure comprising:a first carrier board having a first face, a second face and multiple first perforations, the first perforations being connected with the first and second faces;
a second carrier board having a third face, a fourth face and multiple second perforations, the second perforations being connected with the third and fourth faces;
at least one elastic member having a first end and a second end, the first end being connected with the second carrier board; and
a connection member movably disposed on the fourth face and connected with the second end of the elastic member, the connection member having multiple hook sections and an operation section, each hook section having a first guide wall, a second guide wall and a restriction notch, the hook section correspondingly passing through the first and second perforations, the first and second carrier boards being inserted in the restriction notch, the second face of the first carrier board abutting against and connecting with the third face of the second carrier board, the operation section driving the connection section to reciprocally move, the first guide wall abutting against one end of the first perforation, the second guide wall abutting against the other end of the first perforation.

US Pat. No. 10,461,450

SIGNAL CONNECTOR BRACES

Hewlett Packard Enterpris...

1. A signal connector brace for providing mechanical support to a signal connector coupled to a circuit board, the signal connector brace comprising:a housing having an exterior surface;
first and second protrusions extending from the housing to couple the housing to vias of the circuit board thereby positioning the exterior surface of the housing in contact with a corresponding exterior surface of the signal connector to brace the signal connector;
a recess on the housing positioned between locations where the first and second protrusions respectively join the housing, wherein the recess is configured to receive a mechanical fastener for coupling the signal connector brace to the circuit board.

US Pat. No. 10,461,449

METHODS FOR THE ACYLATION OF MAYTANSINOL

IMMUNOGEN, INC., Waltham...

1. A method of preparing a compound represented by the following formula:the method comprising:a) reacting maytansinol with an N-carboxyanhydride in a reaction mixture additionally comprising diisopropylethylamine and zinc triflate, wherein the N-carboxyanhydride is represented by the following formula:

 thereby forming the compound of Formula (6a):

b) reacting unreacted N-carboxyanhydride from the reaction mixture in step a) with methanol;
c) reacting the compound of formula (6a) with a carboxylic acid having the formula R3COOH in the presence of a condensing agent or with an activated carboxylic acid having the formula R3COX, to form a compound represented by the following formula:

 wherein R2 is methyl; R3 is —Y—S—SR4; Y is —CH2CH2— or —CH2CH2C(CH3)2—; R4 is —CH3; —COX is N-succinimidyl ester; and
d) reacting the compound of formula (IIIa) with a reducing agent to form the compound DM1 or DM4.

US Pat. No. 10,461,448

BOARD MOUNTING TERMINAL

Tyco Electronics Japan G....

1. A board mounting terminal extending like a rod:(a) for being inserted into a through-hole in a circuit board and being soldered to the circuit board,
(b) having a tip portion, and
(c) having a recessed groove in a face of the board mounting terminal:
(1) extending in a direction of extension of the board mounting terminal,
(2) having a tip end in the tip portion of the board mounting terminal, and
(3) having an area of a recess of the recessed groove in a cross-section extending in a direction transverse to the direction of extension of the board mounting terminal decreasing as a distance from the tip portion of the board mounting terminal, oriented in a direction of insertion of the board mounting terminal, increases.

US Pat. No. 10,461,444

ELECTRICAL WIRING DEVICES WITH SCREWLESS CONNECTION TERMINALS

HUBBELL INCORPORATED, Sh...

1. A blade-type electrical receptacle comprising:a housing comprising a main body having a plurality of cavities, a front cover removably secured to a first side of the main body and having a plurality of blade receiving slots, and a rear cover removably secured to a second side of the main body and having a plurality of wire receiving apertures and a plurality of plunger openings; and
a plurality of contact assemblies;
wherein one of the plurality of contact assemblies is positioned at least partially within one of the plurality of a cavities and is accessible from one of the plurality of wire receiving apertures and one of the plurality of plunger openings in the rear cover, and is accessible from one of the plurality of blade receiving slots in the front cover;
wherein each of the plurality of the contact assemblies comprises:
a contact member having a contact body and at least two contact fingers extending from the contact body wherein the at least two contact fingers are aligned with one of the plurality of blade receiving slots in the front cover;
a wire terminal forming an electrically conductive path with the contact member, the wire terminal comprising a contact arm secured to the contact body, a clamp brace secured to the contact arm and a clamp spring secured to the clamp brace, the clamp spring being movable relative to the clamp brace between a closed position where a wire can be clamped between the clamp spring and the clamp brace with a force that is substantially perpendicular to a longitudinal axis of the wire so that the clamp spring can compress the wire against the clamp brace, and an open position where a wire can be inserted through one of the plurality of wire receiving apertures in the rear cover and between the clamp spring and the clamp brace; and
a plunger positioned within one of the plurality of cavities and extending at least partially through one of the plurality of plunger openings in the rear cover, the plunger being interactive with the clamp spring such that movement of the plunger in a first direction outward relative to the rear cover causes the plunger to apply a mechanical load to the clamp spring to cause the clamp spring to move from the closed position to the open position and movement of the plunger in a second direction inward relative to the rear cover removes the mechanical load from the clamp spring so that to the clamp spring is biased from the open position to the closed position.

US Pat. No. 10,461,443

SPLIT GROUNDING BUSHING WITH REMOVABLE SPACER

Bridgeport Fittings, LLC,...

1. A split grounding bushing for placement on an end of an electrical metallic tubing (EMT) or an end of a rigid conduit, comprising:a first metal bushing portion forming a first portion of a ring having a first end and a second end,
a second metal bushing portion forming a second portion of the ring having a first end and a second end,
at least one grounding screw extending through said first or second metal bushing portion positioned to make electrical contact with the EMT or rigid conduit,
a lug having an opening, the lug secured to one of the metal bushing portions,
a retaining screw threaded into said lug and extending into the opening so as to secure a ground conductor thereto,
a hinge formed at the second end of the first metal bushing portion and the second end of the second metal bushing portion, so that the first end of the first metal bushing portion and the first end of the second metal bushing portion can be opened to extend around the end of the EMT or rigid conduit and then closed, and
a removable metallic spacer having a shape that is a section of a cylinder, the removable spacer having an inner smooth surface with a radius of curvature substantially corresponding to a radius of curvature of an outer surface of the EMT so as to electrically bond to the EMT, the removable spacer also having an outer smooth surface corresponding to a radius of curvature of an inner surface of the second metal bushing portion so as to electrically bond to the second metal bushing portion.

US Pat. No. 10,461,442

PRESSURE CONTACT TERMINAL FOR CONNECTING ELECTRONIC COMPONENT AND WIRE

YAZAKI CORPORATION, Mina...

1. A pressure contact terminal comprising:a component clip configured to clip an electronic component and be electrically connected with the electronic component;
a pressure contact blade to be connected with a wire by pressure contact;
a step connection configured to connect the component clip and the pressure contact blade to each other at different bottom face heights;
a first bent portion connecting the step connection and the component clip to each other at a first bending angle; and
a second bent portion connecting the step connection and the pressure contact blade to each other at a second bending angle.

US Pat. No. 10,461,441

ALUMINUM ALLOY ELEMENT WIRE, ALUMINUM ALLOY STRANDED WIRE AND METHOD FOR PRODUCING ALUMINUM ALLOY STRANDED WIRE, AUTOMOTIVE ELECTRIC WIRE, AND WIRE HARNESS

AUTONETWORKS TECHNOLOGIES...

1. An aluminum alloy element wire for use as a conductor of an automotive cable, having:a chemical composition comprising in mass percent
Mg: 0.3% or more and 0.9% or less,
Si: 0.1% or more and 0.7% or less,
Fe: 0.1% or more and 0.4% or less,
at least one element selected from the group consisting of Cu, Cr, Ni, and Zr: 0.01% or more and 0.5% or less in total, and
the balance being Al and unavoidable impurities; and
a surface roughness Ra being in the range of 0.15 ?m or more and 2 ?m or less as measured with a non-contact surface roughness measuring machine.

US Pat. No. 10,461,434

METAMATERIALS FOR SURFACES AND WAVEGUIDES

Duke University, Durham,...

1. An apparatus, comprising:a waveguide; and
a plurality of adjustable elements distributed along the waveguide, each having a dipolar response to a guided wave mode of the waveguide, the plurality of adjustable elements corresponding to a plurality of apertures in a bounding conducting surface of the waveguide;
wherein the dipolar response is a magnetic dipolar response or an electric dipolar response.

US Pat. No. 10,461,430

HIGH-EFFICIENCY BROADBAND ANTENNA

WORLDWIDE ANTENNA SYSTEM ...

1. A crossed-field antenna system, comprising:an E-cylinder tuning circuit operably coupled to an E-cylinder;
a D-plate tuning circuit operably coupled to a D-plate;
a transmitter feed tuning circuit operably coupled to a transmitter, the E-cylinder tuning circuit, and the D-plate tuning circuit;
at least one signal sensor; and
a controller operably coupled to the transmitter feed tuning circuit, the E-cylinder tuning circuit, the D-plate tuning circuit, and the at least one signal sensor, the controller including at least one processor configured to:
determine a current ratio to provide approximately equal power to the E-cylinder and the D-plate;
set a reactance of the E-cylinder tuning circuit and a reactance of the D-plate tuning circuit based on the current ratio;
determine a combined impedance value based at least in part on the reactance of the E-cylinder tuning circuit and the reactance of the D-plate tuning circuit; and
set a reactance of the transmitter feed tuning circuit based on the combined impedance value.

US Pat. No. 10,461,429

SWITCHED ANTENNA ASSEMBLY

Apple Inc., Cupertino, C...

1. A consumer electronic product, comprising:a housing having walls that define an internal volume, wherein a portion of one of the walls is a radio frequency (RF) antenna;
a connector electrically coupled to the RF antenna, the connector having a fixed length;
a switchable inductor array electrically coupled to the RF antenna via the connector, the switchable inductor array comprising inductive elements that cooperate with the connector to define an inductance of the connector; and
a switch circuit coupled to the switchable inductor array and arranged to select at least one of the inductive elements to vary the inductance of the connector.

US Pat. No. 10,461,427

ANTENNA AND ELECTRONIC DEVICES COMPRISING THE SAME

Samsung Electronics Co., ...

1. An electronic device comprising:a first antenna radiator;
a substrate comprising:
a first grounding area for the first antenna radiator,
a non-grounding area, and
at least one feeding unit;
a non-segmented metal case comprising a rear case of the electronic device; and
a nonmetal area arranged between the non-segmented metal case and the substrate,
wherein the at least one feeding unit feeds the first antenna radiator,
wherein the rear case is directly connected to the first grounding area of the substrate,
wherein the rear case includes a second grounding area for the first antenna radiator, and
wherein at least a part of the first antenna radiator is patterned on the substrate, and the other part of the first antenna radiator is arranged in the nonmetal area.

US Pat. No. 10,461,425

ANTENNA STRUCTURE AND WIRELESS COMMUNICATION DEVICE USING SAME

Chiun Mai Communication S...

1. An antenna structure comprising:a metallic member, the metallic member defining at least one slot and being divided into a first combining portion and a second combining portion by the at least one slot;
a feed portion, the feed portion electrically connected to the first combining portion and configured to feed current to the first combining portion;
a ground portion, the ground portion electrically connected to the first combining portion and configured to ground the first combining portion; and
a radiator, the radiator electrically connected to the second combining portion and configured to feed current to the second combining portion; wherein the radiator comprises a feed section, a radiating portion, and a ground section, the feed section is electrically connected to the radiating portion to feed current to the radiating portion, the radiating portion is positioned at a plane perpendicular to a plane of the feed section, the radiating portion comprises a first radiating section, a second radiating section, a third radiating section, and a fourth radiating section; wherein one end of the first radiating section is perpendicularly connected to the feed section, and another end of the first radiating section is electrically connected to the metallic member; wherein the second radiating section is perpendicularly connected to the first radiating section, and the third radiating section is perpendicularly connected to an end of the second radiating section away from the first radiating section; wherein one end of the fourth radiating section is perpendicularly connected to one end of the third radiating section away from the second radiating section, and another end of the fourth radiating section is electrically connected to the metallic member; wherein one end of the ground section is electrically connected to one end of the first radiating section, and another end of the ground section is grounded;
wherein the first combining portion, the feed portion, and the ground portion cooperatively form a first antenna of the antenna structure, the second combining portion and the radiator cooperatively form a second antenna of the antenna structure, the first antenna activates a first mode to generate radiation signals in a first frequency band, and the second antenna activates a second mode to generate radiation signals in a second frequency band.

US Pat. No. 10,461,424

ANTENNA STRUCTURE AND WIRELESS COMMUNICATION DEVICE USING SAME

Chiun Mai Communication S...

1. An antenna structure comprising:a metallic member, the metallic member comprising a front frame, a backboard, and a side frame, the side frame being positioned between the front frame and the backboard; and
a first feed source electrically connected to the front frame;
wherein the side frame comprises at least a top portion, a first side portion, and a second side portion, the first side portion and the second side portion are respectively connected to two ends of the top portion;
wherein the side frame defines a slot, the slot is defined on the top portion; and
wherein the front frame defines a gap, the gap communicates with the slot and extends across the front frame.

US Pat. No. 10,461,422

BALANCED ANTENNA

Airgain Incorporated, Sa...

1. A balanced antenna system comprising:a cable;
an antenna comprising a first infinite balun, a second infinite balun, and a feeding gap; and
wherein the cable transports a radio signal from the antenna to a radio and from a radio to the antenna;
wherein the first infinite balun and the second infinite balun transform an unbalanced transmission line characteristic of the cable to the balanced feeding of the antenna.

US Pat. No. 10,461,417

POWER FEED CIRCUIT AND ANTENNA DEVICE

Hitachi Metals, Ltd., To...

1. A power feed circuit for feeding power to first through fifth antenna elements sequentially arranged in a horizontal direction, the power feed circuit comprising:a 90-degree hybrid circuit that comprises two input terminals for inputting a power-feed signal and two output terminals, equally distributes electrical power input from the two input terminals and outputs the distributed electrical power from the two output terminals and is configured such that the power-feed signal input from one of the input terminals is output to an other of the output terminals by being phase-delayed by 90 degrees relative to one of the output terminals, and that the power-feed signal input from an other of the input terminals is output to the one of the output terminals by being phase-delayed by 90 degrees relative to the other of the output terminals;
an equal distribution circuit by which the power-feed signal output from the one of the output terminals is equally distributed and output to the second and fourth antenna elements; and
a distribution circuit by which the power-feed signal output from the other of the output terminals is distributed and output to the first, third and fifth antenna elements,
wherein the distribution circuit distributes such that electrical power output to the first and fifth antenna elements is equal and that a sum of electrical power output to the first and fifth antenna elements is not more than electrical power output to the third antenna element, and
wherein a phase-inverted power is fed to the third antenna element and either one of the second and fourth antenna elements.

US Pat. No. 10,461,416

APERTURE SEGMENTATION OF A CYLINDRICAL FEED ANTENNA

KYMETA CORPORATION, Redm...

1. A flat panel antenna comprising: an antenna feed to input a cylindrical feed wave; anda physical antenna aperture coupled to the antenna feed and comprising a plurality of segments having antenna elements, wherein each of the antenna elements is operable to radiate radio frequency (RF) energy, and wherein each of the plurality of segments is physically distinct from other segments in the plurality of segments and the plurality of segments are coupled together to form an array of antenna elements in a pattern.

US Pat. No. 10,461,414

ANTENNA HAVING DIELECTRIC SHEET LOADING TO CONTROL BEAM WIDTH

CommScope Technologies LL...

1. An antenna for a wireless communication system comprising:a columnar array of dipole radiating elements; and
a substantially flat sheet of dielectric material, wherein the sheet of dielectric material is positioned over the columnar array of dipole radiating elements and spaced at a predetermined distance from the dipole radiating elements, and wherein the sheet of dielectric material extends over at least a majority portion of the array of dipole radiating elements, and wherein the sheet of dielectric material narrows an azimuth beam width of a beam formed by the array of dipole radiating elements; and
a radome that covers the array of dipole radiating elements.

US Pat. No. 10,461,413

ENCLOSURE FOR MILLIMETER-WAVE ANTENNA SYSTEM

PERASO TECHNOLOGIES INC.,...

1. An antenna system, comprising:a support member having a mounting surface;
a plurality of electronic components supported on the mounting surface;
an antenna supported on the support member adjacent to a perimeter of the mounting surface, for transmitting and receiving ultra-high frequency radio waves of wavelength ?; and
an enclosure having a top portion and a bottom portion for enclosing the support member and a radome for enclosing the antenna, wherein a center of curvature of the radome is positioned less than 1?, from an end of the antenna elements for minimizing the area illuminated by the antenna and minimizing secondary out-of-phase radiation sources, and wherein the radome has a thickness of approximately ?/5 and the radome has a radius of less than 1?, for minimizing ripples in the antenna radiation pattern and power losses.

US Pat. No. 10,461,409

POINTING SYSTEM IMPROVEMENT WITH IMAGING ARRAY FEEDS

1. A spacecraft antenna system comprising:an antenna reflector mechanically coupled with an antenna pointing mechanism (APM), the APM configured to point the antenna reflector in response to commands from an APM controller, the antenna reflector illuminated by a plurality of radiating feed elements configured as a phased array configured to produce, in a far field of the reflector, a set of contiguous abutting user beams;
a beam forming network (BFN) disposed proximate to the phased array, the BFN including a plurality of variable amplitude and phase (VAP) adjusting arrangements;
at least one tracking feed configured to receive an uplink beacon signal from the ground by way of the antenna reflector; and
an RF autotrack receiver configured to measure pointing errors of the antenna reflector from the received uplink beacon signal and output corresponding pointing error information to the APM controller and to a VAP element controller; wherein
the APM controller is configured to use the outputted pointing error information to reduce the measured pointing errors by causing the APM to adjust the reflector pointing, at a frequency less than a first frequency; and
the VAP element controller is configured use the outputted pointing error information to electronically adjust the pointing of the user beams by adjusting beam forming coefficients of one or more of the VAP adjusting arrangements at a second frequency greater than the first frequency.

US Pat. No. 10,461,406

LOOP ANTENNA WITH INTEGRATED PROXIMITY SENSING

Microsoft Technology Lice...

1. An antenna assembly configured to detect proximity of an object, the antenna assembly comprising:a conductive element including an antenna structure;
a capacitive proximity sensor module electrically connected to the conductive element, the capacitive proximity sensor module driving the conductive element to detect proximity of the object to the conductive element;
a radiofrequency (RF) feed antenna positioned to parasitically drive the conductive element for communications in a frequency band of RF signals; and
a second conductive element including another antenna structure, the RF feed antenna being positioned to parasitically drive the second conductive element for communications in a second frequency band of RF signals, the capacitive proximity sensor module using the second conductive element to detect proximity of the object to the second conductive element.

US Pat. No. 10,461,403

ANTENNA DEVICE

DENSO CORPORATION, Kariy...

1. An antenna device comprising:a first conductive plate that is a conductor formed in a board shape;
a second conductive plate that is a conductor formed in a board shape and disposed to face the first conductive plate with a space therebetween;
a short-circuiting section that is a conductor disposed between the first conductive plate and the second conductive plate, has a housing space formed for housing an electronic component, and is connected to both the first conductive plate and the second conductive plate; and
a connecting section that is a conductor that extends from the electronic component disposed inside the short-circuiting section toward the outside of the short-circuiting section without being electrically connected to the short-circuiting section and the first conductive plate, and extends between the first conductive plate and the second conductive plate from the first conductive plate toward the second conductive plate or from the second conductive plate toward the first conductive plate without being electrically connected to the first conductive plate, to be electrically connected to the second conductive plate, wherein
the electronic component is exposed to outside of the antenna device through the housing space.

US Pat. No. 10,461,402

MOBILE DEVICE WITH ANTENNA-BOOSTING CASE COUPLING

Intel Corporation, Santa...

1. A mobile device, comprising:a circuit board;
circuitry for transmissive communication, mounted on the circuit board;
an antenna element mounted on the circuit board, in communication with the circuitry to transmit or receive transmissive communication;
an electromagnetic shield that covers the circuitry for transmissive communication, but not the antenna element;
a housing that houses the circuit board with the circuitry for transmissive communication and the antenna element, and that includes a conductive housing element having an elongate segment; and
a coupling device, housed by the housing and external to the electromagnetic shield, electrically coupled to the electromagnetic shield and to a radiation path of the antenna element, as well as coupled to the elongate segment of the conductive housing element.

US Pat. No. 10,461,397

SURGICAL SPONGES WITH FLEXIBLE RFID TAGS

Augustine Biomedical and ...

10. A surgical sponge, comprising:a sponge body; and
a radiofrequency (RF) tag attached within an interior portion of the sponge body, the tag comprising:
a base layer,
a metal foil loop antenna etched on to the base layer,
an electrically responsive member, and
additional metal foil provided on the base layer when the metal foil loop antenna is etched on to the base layer, the additional metal foil configured to enhance x-ray opacity of the surgical sponge,
wherein the tag includes a radiofrequency (RF) identifier and two or more polymeric protective film layers, the RF identifier being laminated between the two protective film layers, wherein each of the base layer and the protective film layers has one or more tabs that project outward from an outer perimeter of the tag.

US Pat. No. 10,461,396

SYSTEM AND METHOD FOR LOW-POWER CLOSE-PROXIMITY COMMUNICATIONS AND ENERGY TRANSFER USING A MINIATURE MULTI-PURPOSE ANTENNA

Fit Pay, Inc., Carlsbad,...

1. A system for providing information to a magnetic card reader, the system comprising:an antenna having two terminal ends;
a microprocessor for applying an information signal differentially to the antenna by feeding the information signal simultaneously to the two terminal ends of the antenna, the informational signal representing information stored in a memory segment of the microprocessor or in a memory connected to the microprocessor; and
the antenna transmitting an alternating magnetic field representing the information, the alternating magnetic field responsive to the information signal and received by the magnetic card reader.

US Pat. No. 10,461,395

ELECTRONIC DEVICE WITH NEAR-FIELD ANTENNA OPERATING THROUGH DISPLAY

Apple Inc., Cupertino, C...

1. An electronic device, comprising:a housing;
a near-field communications loop antenna;
a display in the housing that overlaps the near-field communications loop antenna, wherein the near-field communications loop antenna wirelessly communicates using electromagnetic signals passing through the display, and the display comprises a display pixel layer that has an array of display pixels forming images for the display;
a ferromagnetic shielding layer, wherein the near-field communications loop antenna is interposed between the ferromagnetic shielding layer and the display pixel layer;
a display cover layer that overlaps the display; and
a dielectric layer having an inverted-F antenna resonating element formed separately from the near-field communications loop antenna, wherein the dielectric layer having the inverted-F antenna resonating element is mounted at an inner surface of the display cover layer.

US Pat. No. 10,461,390

PHASE SHIFTER AND FEED NETWORK INCLUDING A MICROSTRIP/COPLANAR WAVEGUIDE COUPLING STRUCTURE HAVING VERTICAL PROJECTIONS

Huawei Technologies Co., ...

9. A feed network, comprising:a power divider and a phase shifter connected to each branch of the power divider;
wherein the phase shifter comprises at least one phase shift component,
wherein the at least one phase shift component comprises:
a substrate,
a microstrip coupling structure disposed on a first plane of the substrate,
a microstrip transmission line connected to the microstrip coupling structure and disposed on the first plane,
a microstrip/coplanar-waveguide coupling structure, wherein the microstrip/coplanar-waveguide coupling structure comprises,
a microstrip connected to the microstrip transmission line and disposed on the first plane, and
a coplanar waveguide disposed on a second plane of the substrate opposite to the microstrip of the microstrip/coplanar-waveguide coupling structure disposed on the first plane and coupled with the microstrip of the microstrip/coplanar-waveguide coupling structure, wherein one or more vertical projections of a first metal layer of the coplanar waveguide and one or more vertical projections of the microstrip of the microstrip/coplanar-waveguide coupling structure, completely overlap, partially overlap, or are staggered; and
a microstrip input/output port connected to the microstrip coupling structure and a coplanar waveguide input/output port connected to the coplanar waveguide,
wherein a phase shift generated from a signal passing between the microstrip input/output port and the coplanar waveguide input/output port is a phase shift of the at least one phase shift component.

US Pat. No. 10,461,386

IMPEDANCE COMPENSATION STRUCTURE FOR BROADBAND NEAR-FIELD MAGNETIC-FIELD PROBE AND ITS CONSTRUCTION METHOD

BEIHANG UNIVERSITY, Beij...

1. An impedance compensation structure for a broadband near-field magnetic-field probe, comprising: a signal via; and a plurality of grounding vias provided around the signal via to form a coaxial via array; wherein the plurality of grounding vias and the signal via have an identical size, all distances between each of the plurality of the grounding vias and the signal via are equal, and the plurality of the grounding vias forms a circle centered at the signal via; wherein each of the plurality of the grounding vias is connected with a magnetic field probe top layer shield plane and a magnetic field probe bottom layer shield plane; each of the plurality of the grounding vias keeps in a conducting state from a direct current to a high frequency, in such a manner that impedance matching of the broadband near-field magnetic-field probe is achieved; by regulating distances between each of the plurality of the grounding vias and the signal via and amounts of the plurality of the grounding vias to accomplish impedance changes caused by the signal via, so as to ensure impedance of the magnetic-field probe is continuous;wherein one of the plurality of the grounding vias and the signal via are a pair of through holes;
wherein the plurality of the grounding vias is connected with the magnetic field probe top layer shield plane and the magnetic field probe bottom layer shield plane; both the magnetic field probe top layer shield plane and the magnetic field probe bottom layer shield plane are connected with the with an external power source to ground; each of the plurality of the grounding vias forms a capacitance with the signal via, wherein a value of a pair of through hole capacitance is calculated according to formula of:

wherein ? is a dielectric constant of a first medium, D is a distance between each of the plurality of the grounding vias to the signal via; and a is a radius of the plurality of the grounding vias and the signal via.

US Pat. No. 10,461,385

JOSEPHSON JUNCTION-BASED CIRCULATORS AND RELATED SYSTEMS AND METHODS

Yale University, New Hav...

1. A circuit, comprising:a plurality of Josephson junctions arranged in series in a loop;
at least one magnetic element producing magnetic flux through the loop;
a plurality of superconducting resonators, each resonator coupled to the loop between a different neighboring pair of Josephson junctions of the plurality of Josephson junctions;
a plurality of ports, each port coupled to at least one of the plurality of resonators at ends of the resonators opposite to ends at which the resonators are coupled to the loop; and
at least one controller configured to provide input energy to each of the plurality of ports that causes the circuit to function as a circulator between the plurality of ports.

US Pat. No. 10,461,383

BATTERY ENCLOSURE HAVING A COMPOSITE STRUCTURE WITH A COOLANT CHANNEL

Ford Global Technologies,...

18. A battery assembly, comprising:a thermal exchange plate;
a battery array supported on the thermal exchange plate;
a composite structure of an enclosure, the composite structure including a core sandwiched between a first outer layer and a second outer layer, the first and second outer layers having a material composition different than a material composition of the core, the composite structure including at least one support surface and at least one channel surface, the at least one support surface directly contacting the thermal exchange plate, the at least one channel surface recessed relative to the at least one support surface to provide a recessed area, the thermal exchange plate and the recessed area of the composite structure together providing a coolant channel; and
an insert held within a core of the composite structure, the insert configured to receive a fastener that secures the thermal exchange plate relative to the composite structure.

US Pat. No. 10,461,382

RECEPTACLE FOR A BATTERY MODULE AND BATTERY MODULE HAVING SUCH A RECEPTACLE

Robert Bosch GmbH, Stutt...

1. A receptacle (34) for at least partially pressing accommodation of at least one battery cell (12) for a battery module, said receptacle (34) comprising at least two end plates (10) configured to be arranged on two opposing sides of the at least one battery cell (12), wherein the end plates (10) are connected by a plurality of connecting means (24) fixed to the end plates (10), each of the connecting means having at least two plug-in elements (28) that, for fixing the connecting means (24) to the end plates (10), engage with sockets (22) of the end plates (10) extending in a plane arranged substantially at right angles to the direction of extent of the connecting means (24), wherein the connecting means and the plug-in elements are integrally formed, and wherein the sockets completely pass through the end plates.

US Pat. No. 10,461,380

BATTERY ATTACHMENT APPARATUSES

MAKITA CORPORATION, Anjo...

1. A battery attachment apparatus to which an electric tool battery is detachably attached comprising:a case as an exterior portion of the battery attachment apparatus, wherein the case includes a front face on which the electric tool battery is detachably attached;
a lock hole formed within the case extending to its interior, establishing communication between an exterior and interior of the case, wherein the lock hole is formed at one face that is different from the front face of the case;
a lock member locked to the lock hole;
a cover member enclosing or closing an opening of the lock hole from within the case; and
a mounting portion provided on an inner surface of the case, wherein the cover member is mounted to the mounting portion, wherein
the mounting portion includes a mounting support portion that faces the lock hole,
the mounting support portion is configured to support the cover member from within the interior of the case toward the lock hole,
the mounting portion is configured such that the cover member is mounted to the mounting portion by moving the cover member along the inner surface of the case,
the mounting portion includes a detachment regulating portion configured to regulate the cover member from detaching with respect to the mounting portion, and
the mounting support portion is configured to allow mounting of the cover member to the mounting portion beyond the detachment regulating portion through elastic deformation of the mounting support portion.

US Pat. No. 10,461,375

SECONDARY BATTERY, BATTERY PACK, AND VEHICLE

KABUSHIKI KAISHA TOSHIBA,...

1. A secondary battery comprising a positive electrode, a negative electrode, and an aqueous electrolyte,wherein the aqueous electrolyte includes a first aqueous electrolyte and a second aqueous electrolyte,
the first aqueous electrolyte contains lithium ions,
the second aqueous electrolyte contains lithium ions,
a concentration of the lithium ions contained in the second aqueous electrolyte is higher than the concentration of the lithium ions contained in the first aqueous electrolyte, and
the first aqueous electrolyte is substantially in contact with only the positive electrode among the negative electrode and the positive electrode, and the second aqueous electrolyte is substantially in contact with only the negative electrode among the negative electrode and the positive electrode.

US Pat. No. 10,461,374

BATTERY INTERNAL TEMPERATURE SENSING BATTERY MANAGEMENT SYSTEM

The Johns Hopkins Univers...

1. A battery management system comprising:a processor;
a multiplexer;
a second multiplexer;
a current source; and
a measurement circuit,
the measurement circuit being electrically coupled to the processor, and the measurement circuit comprising a gain circuit, a second gain circuit, a buffer, and a root means square converter, the first and second gain circuits increasing the amplitude of a signal received from the multiplexer and the root means square converter converting the signal received from the multiplexer into a direct current signal of equivalent value,
the battery management system is configured to:
send a first command signal to the multiplexer to cause the multiplexer to select a cell of a battery;
send a second command signal to the current source to apply a current to the cell of the battery;
send a third command signal to the second multiplexer to cause the second multiplexer to select a current path, the first and command signals being synchronous commands; and
receive measurement information based on the application of the current to the cell from the measurement circuit.

US Pat. No. 10,461,372

PROTECTIVE LAYERS FOR ELECTROCHEMICAL CELLS

Sion Power Corporation, ...

1. An article for use in an electrochemical cell, comprising:a first layer; and
a second layer disposed on the first layer, wherein the second layer comprises a plurality of particles, and wherein the second layer is substantially non-porous,
wherein the plurality of particles comprise an ionically conductive material,
wherein at least a portion of the plurality of particles are at least partially embedded within the first layer,
wherein at least a portion of the plurality of particles are fused to one another,
wherein the second layer has an ionic conductivity between about 10?6 S/cm and about 10?2 S/cm, and
wherein the second layer has an average thickness between about 0.5 microns and about 50 microns.

US Pat. No. 10,461,371

METHOD FOR OPERATING A BATTERY CELL

Robert Bosch GmbH, Stutt...

1. A method for operating a lithium ion battery cell (10) comprising at least one rolled or stacked electrode assembly (28) which is arranged in a housing (36) and has a first electrode layer (12), at least one separator layer (16) and a second electrode layer (14) and a nonaqueous electrolyte containing one or more solvents and also one or more electrolyte salts, the method comprising releasing, when a critical state of the battery cell (10) is reached, a chemical substance or a mixture of chemical substances (46) which forms complexes (26) with lithium ions (22) in the electrolyte.

US Pat. No. 10,461,370

SECONDARY BATTERY, BATTERY PACK, AND VEHICLE

KABUSHIKI KAISHA TOSHIBA,...

1. A secondary battery, comprising:a positive electrode;
a negative electrode; and
an electrolyte,
wherein:
the electrolyte comprises a water-containing solvent, an electrolyte salt, and a nitrogen atom-containing organic sulfur compound;
the electrolyte is situated between and around the positive electrode and the negative electrode; and
a concentration of the nitrogen atom-containing organic sulfur compound in the electrolyte is within a range of from 0.001 mM to 20 mM.

US Pat. No. 10,461,369

BATTERY AND BATTERY PACK

KABUSHIKI KAISHA TOSHIBA,...

1. A battery comprising:a flat-shaped electrode group that includes a positive electrode, a positive electrode current collector tab electrically connected to the positive electrode, a negative electrode, and a negative electrode current collector tab electrically connected to the negative electrode, the positive electrode current collector tab being wound into a flat shape and located at a first edge surface, and the negative electrode current collector tab being wound into a flat shape and located at a second edge surface;
a package member that includes a stainless steel-made first package having a flange at an opening and a stainless steel-made second package, and that stores the electrode group in a space formed by welding the flange of the first package to the second package; and
a terminal section that includes a through-hole that is open to the first package, a ring-shaped rising portion that extends from a periphery of the through-hole toward an inside of the package member, a ring-shaped member that is arranged on an outer surface of the rising portion, an insulation gasket that has a cylindrical portion to be inserted into the rising portion, and an external terminal that includes a head portion and a shank portion extending from the head portion, the external terminal being fixed to the first package by caulking with the head portion projecting to an outside of the first package and the shank portion being inserted into the cylindrical portion of the insulation gasket, and the external terminal being electrically connected to the positive electrode or the negative electrode.

US Pat. No. 10,461,368

DEUTERATED ELECTROLYTE SOLVENTS

Ford Global Technologies,...

1. An electrolyte for a lithium-ion cell comprisinga lithium salt;
a contaminant; and
an organic solvent isotopologue having deuterium substituted for hydrogen.

US Pat. No. 10,461,364

ELECTROLYTE ADDITIVES FOR LITHIUM-ION BATTERIES UNDER HIGH-VOLTAGE OPERATION

UCHICAGO ARGONNE, LLC, C...

1. A non-aqueous electrolyte for a lithium-ion battery comprising a lithium salt and an additive in an organic solvent; wherein the solvent comprises one or more solvent selected from a linear dialkyl carbonate, a cyclic alkylene carbonate, a sulfolane, a sulfone, a fluoro-substituted linear dialkyl carbonate, a fluoro-substituted cyclic alkylene carbonate, a fluoro-substituted sulfolane, and a fluoro-substituted sulfone; and wherein the additive comprises a compound of Formula (I):
wherein:
R1 is selected from alkyl and substituted-alkyl;
X is selected from halogen, alkoxy, cyano, sulfonyl, sulfonylamido, carboxylic acid, carboxylic ester, and carboxylic amide;
R2 and R3 each independently is Si(R4)3, or R2 and R3 together are Si(R5)2—;
each R4 and R5 independently is selected from alkyl, phenyl, and alkoxy; and
each substituted-alkyl comprises an alkyl moiety substituted with one or more substituent group selected from alkenyl, alkynyl, hydroxy, halogen, amino, alkoxy, carboxylic acid, carboxylic ester, carboxylic amide, phenyl, sulfonic acid, and phosphonic acid.

US Pat. No. 10,461,363

SULFIDE SOLID ELECTROLYTE MATERIAL, BATTERY, AND PRODUCING METHOD FOR SULFIDE SOLID ELECTROLYTE MATERIAL

TOKYO INSTITUTE OF TECHNO...

1. A sulfide solid electrolyte material comprising:a peak at a position of 2?=29.86°±1.00° in X-ray diffraction measurement using a CuK? ray, and
a composition of Li2y+3PS4(0.1?y?0.175).

US Pat. No. 10,461,362

CALCIUM-BASED SECONDARY CELL AND BATTERY COMPRISING THE SAME

TOYOTA MOTOR EUROPE, Bru...

1. A calcium-based secondary cell comprising:a negative electrode that includes a negative-electrode active material comprising metallic calcium or a calcium alloy, said negative-electrode active material being capable of accepting and releasing calcium ions,
a positive electrode that includes a positive-electrode active material, said positive-electrode active material being capable of accepting and releasing calcium ions,
an electrolyte arranged between the negative electrode and the positive electrode, said electrolyte comprising calcium ions and an electrolyte medium, wherein the electrolyte is not solid at a temperature of about 20° C. and a pressure of about 1 atm and wherein the electrolyte medium includes a non-aqueous solvent, and
a temperature control element,
wherein the temperature control element is configured to bring and/or maintain the cell at a temperature between about 75° C. and 110° C.

US Pat. No. 10,461,361

NONAQUEOUS ELECTROLYTE SECONDARY BATTERY INSULATING POROUS LAYER

SUMITOMO CHEMICAL COMPANY...

1. A nonaqueous electrolyte secondary battery insulating porous layer comprising an inorganic filler and a resin, wherein:an aspect ratio of a projection image of the inorganic filler at a surface of the nonaqueous electrolyte secondary battery insulating porous layer is in a range of 1.4 to 4.0;
respective peak intensities I(hkl) and I(abc) of any diffraction planes (hkl) and (abc) of the nonaqueous electrolyte secondary battery insulating porous layer satisfy the following Formula (1), the peak intensities being obtained from the diffraction planes (hkl) and (abc) orthogonal to each other by measurement by use of a wide-angle X-ray diffraction method; and
a maximum value of a peak intensity ratio is in a range of 1.5 to 300, the peak intensity ratio being calculated by the following Formula (2):
I(hkl)>I(abc)  (1), and
I(hkl)/I(abc)  (2).

US Pat. No. 10,461,360

ELECTRODE COMPOSITIONS FOR SOLID-STATE BATTERIES

Wildcat Discovery Technol...

1. A lithium ion battery, comprising:an anode,
a cathode comprising an unsintered film comprising an NMC material, an additive salt, an ion-conducting inorganic material that is not electrochemically active within an operating voltage of between 3.0V and 4.1V, and a polymer, and
a solid-state electrolyte.

US Pat. No. 10,461,353

FUEL CELL STACK

HONDA MOTOR CO., LTD., T...

4. A fuel cell stack comprising:a stack of fuel cells, each of the fuel cells generating electric power by an electrochemical reaction between a fuel gas and an oxidant gas;
a pair of end plates respectively disposed at ends of the stack of fuel cells in a stacking direction; and
a fluid manifold member disposed on at least one of the end plates, the fluid manifold member allowing a fluid to flow through the fuel cells, the fluid being one of a coolant, a fuel gas, and an oxidant gas,
wherein the fluid manifold member includes a manifold body and a flange portion that is fixed to the at least one of the end plates, the flange portion being directly connected to the manifold body at a location,
wherein the flange portion includes a flange body formed with a protrusion as a single element, the protrusion directly contacts the flange body, the protrusion protrudes directly from the at least one of the end plates and protrudes outward in the stacking direction, and the protrusion extends away from the stack of fuel cells beyond the location at which the manifold body directly connects to the flange portion in the stacking direction,
wherein the protrusion protrudes outward in the stacking direction beyond the flange body,
wherein the flange portion that is fixed to the at least one of the end plates by a plurality of bolts, and
wherein a bolt of the plurality of bolts extends through the protrusion in the stacking direction.

US Pat. No. 10,461,351

POLYMER ELECTROLYTE MEMBRANE FOR FUEL CELL, MEMBRANE-ELECTRODE ASSEMBLY FOR FUEL CELL INCLUDING SAME, AND FUEL CELL INCLUDING SAME

1. A polymer electrolyte membrane for a fuel cell comprising:a cross-linking polymer comprising: a polyhedral oligomeric silsequioxane (POSS) cross-linked with a hydrocarbon-based polymer,
wherein the polyhedral oligomeric silsequioxane is represented by Chemical Formula 1 or 2:

wherein,
R is Chemical Formula 1a,

wherein, ** indicates a binding site where it is bound to Chemical Formula 1 or 2, and
wherein the hydrocarbon-based polymer comprises a repeating unit represented by Chemical Formula 3:

wherein,
A1, A2, and A3 are the same or different and are independently O or S,
D1 and D2 are the same or different and are independently SO2, O, or S,
Y is a substituted or unsubstituted proton conductive group,
n is a real number of 0.2 to 1, and
m is 1-n.

US Pat. No. 10,461,349

METHOD FOR CONTROLLING FUEL CELL SYSTEM

HONDA MOTOR CO., LTD., T...

1. A method for controlling a fuel cell system including a fuel cell, comprising:generating electric current via an electrochemical reaction between a fuel gas and an oxidant gas by the fuel cell including a solid polymer electrolyte membrane;
detecting, using a controller, an impedance of the fuel cell;
determining, using the controller, whether the impedance increases to a threshold impedance; and
increasing, using the controller, the electric current generated by the fuel cell when the impedance is determined to increase to the threshold impedance, wherein an amount of water generated in the fuel cell increases when the electric current is increased,
wherein an oxidant gas supply mechanism supplies the oxidant gas at a lowest supply flow rate when the fuel cell is performing idling electric power generation, and the oxidant gas supply mechanism maintains the lowest supply flow rate when increasing the electric current.

US Pat. No. 10,461,347

REAL-TIME MONITORING AND AUTOMATED INTERVENTION PLATFORM FOR LONG TERM OPERABILITY OF FUEL CELLS

BLOOM ENERGY CORPORATION,...

1. A method for monitoring a power generation system, comprising:receiving operating data from at least one component of the power generation system;
determining whether real-time operating data of the received operating data indicates a potential failure condition for at least one of the components before an occurrence of a failure condition by:
determining whether any portion of the received operating data is in an accepted operating range;
in response to determining that the real-time operating data of the received operating data is not in an accepted operating range:
determining whether an algorithm for determining whether real-time operating data of the received operating data indicates a potential failure condition is available;
in response to determining the algorithm for determining whether the real-time operating data indicates the potential failure condition is unavailable:
correlating the real-time operating data with the potential failure condition; and
creating the algorithm for determining whether the real-time operating data indicates the potential failure condition; and
executing the algorithm for determining whether the real-time operating data indicates the potential failure condition;
issuing a first alert in response to determining the real-time operating data indicates the potential failure condition or transmitting instructions for remedying the potential failure condition to the power generation system; and
updating the algorithm for determining whether the real-time operating data indicates the potential failure condition using preceding operating data in response to determining the real-time operating data indicates the potential failure condition, wherein the preceding operating data is part of the received operating data that is received before the real-time operating data part of the received operating data.

US Pat. No. 10,461,343

FUEL CELL ASSEMBLY WITH COOLING SYSTEM

Ford Global Technologies,...

1. A fuel cell assembly comprising:a membrane electrode assembly sandwiched between first and second plates that each include opposing first and second regions that each define a first coolant header and a second coolant header, and in response to a cold-start mode, the first plate being configured to circulate coolant from the first region to the second region and the second plate being configured to circulate coolant from the second region to the first region.

US Pat. No. 10,461,340

ENERGY MANAGEMENT SYSTEM, ENERGY MANAGEMENT APPARATUS, AND POWER MANAGEMENT METHOD

KYOCERA CORPORATION, Kyo...

1. An energy management system provided with a fuel cell and a load, comprising:a controller programmed to
perform high-temperature maintaining control maintaining a temperature of the fuel cell during an operation within a predetermined temperature range, and
specify a period during which the high-temperature maintaining control should be performed;
a hot water storage including a hot water storage tank;
a heat exchanger, a supply link from the hot water storage tank to the heat exchanger, a return link from the heat exchanger to the hot water storage tank, the heat exchanger configured to heat water supplied through the supply link from the hot water storage tank with exhaust heat generated by an operation of the fuel cell and return heated water through the return link to the hot water storage tank,
wherein
the controller is programmed to automatically perform the high-temperature maintaining control in response to a start of the specified period by decreasing, without stopping, an amount of hot water returned by the heat exchanger through the return link to the hot water storage tank, and
the specified period is a period during which power consumption of the load is below a predetermined threshold value.

US Pat. No. 10,461,336

PROCESS FOR PRODUCING LIQUID COMPOSITION AND PROCESS FOR PRODUCING CATALYST LAYER-FORMING COATING LIQUID

AGC Inc., Chiyoda-ku (JP...

1. A process for producing a liquid composition, which comprisesholding a fluorinated polymer having —SO2F groups at from 110 to 130° C. for at least 45 minutes,
cooling it to less than 110° C.,
converting the —SO2F groups in the fluorinated polymer to ion exchange groups to obtain a fluorinated polymer having ion exchange groups, and
mixing the fluorinated polymer having ion exchange groups and a liquid medium.

US Pat. No. 10,461,334

GAS DIFFUSION ELECTRODE AND FUEL CELL

TORAY INDUSTRIES, INC., ...

1. A gas diffusion electrode comprising a microporous layer on at least one surface of an electrically conductive porous substrate, whereinthe microporous layer includes a first microporous layer that is in contact with the electrically conductive porous substrate, and a dense layer that is in contact with the first microporous layer, the dense layer having a thickness of 1 ?m or more, and
an average number density B of pores having a pore diameter of 0.15 ?m or more and 1 ?m or less in the dense layer is 1.3A or more where A is an average number density of pores having a pore diameter of 0.15 ?m or more and 1 ?m or less in the microporous layer disposed on at least one surface of the electrically conductive porous substrate.

US Pat. No. 10,461,333

ELECTROCHEMICAL CELLS COMPRISING FIBRIL MATERIALS

Sion Power Corporation, ...

1. An electrochemical cell, comprising:a negative electrode;
a positive electrode; and
an electrolyte in electrochemical communication with the negative electrode and the positive electrode,
wherein the electrolyte comprises a plurality of fibrils comprising cellulose or a cellulose derivative having maximum cross-sectional diameters of less than about 100 nanometers and aspect ratios of at least about 10:1.

US Pat. No. 10,461,329

HIGH CAPACITY PHOSPHOROUS SULFIDE BASED CATHODE MATERIALS FOR MAGNESIUM BATTERIES

1. An electrode material, comprising:a composite of formula (I)
MxPySz  (I)
wherein M is at least one metal selected from the group consisting of Mg, Ag, Cu, Fe, Ni, Co, Cr, and Mn;
x is independently a number from 2-10,
y is independently a number from 1-15, and
z is independently a number from 4-30; and
wherein the composite, the material, or both do not comprise an oxide species.

US Pat. No. 10,461,326

NEGATIVE ELECTRODE INCLUDING SIOX PARTICLES HAVING CARBON COATING, CARBONACEOUS ACTIVE MATERIAL PARTICLES, AND COMPOUND HAVING CARBOXYL OR HYDROXYL GROUP AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES

SANYO Electric Co., Ltd.,...

1. A negative electrode for nonaqueous electrolyte secondary batteries comprising a negative electrode current collector and a negative electrode mixture layer disposed on the current collector, whereinthe negative electrode mixture layer includes SiOx 0.5?x?1.5 particles having a carbon coating on a particle surface, carbonaceous active material particles, and a compound having at least one of a carboxyl group and a hydroxyl group and having an average number of etherifying agent moieties present per unit molecule of not more than 0.8, and
the carbon coating includes a first coating disposed on the surface of the SiOx particles and a second coating disposed on the first coating and including carbon having higher crystallinity than the carbon forming the first coating, wherein a thickness of the second coating is 10 to 200 nm.

US Pat. No. 10,461,318

SYSTEMS AND METHODS FOR LITHIUM-ION CELL MANUFACTURING TO REDUCE CELL CONTAMINATION

GM Global Technology Oper...

1. A method comprising:wetting, via a wetting mechanism, an electrode material with a liquid to form a wet precursor;
removing a portion of the electrode material from the wet precursor with a debris generating tool to form a pre-electrode; and
eliminating, via a conditioner, the liquid from the pre-electrode to thereby form an electrode,
wherein the liquid is water and eliminating the liquid comprises applying an organic solvent to the pre-electrode, and
wherein the organic solvent is applied to the pre-electrode in a gaseous phase.

US Pat. No. 10,461,316

REINFORCED METAL FOIL ELECTRODE

Oxis Energy Limited, Oxf...

1. A lithium-sulphur electrochemical cell comprising a metal foil electrode as the anode, a sulphur-containing cathode and an electrolyte, the metal foil electrode comprising:i) a reinforcement layer comprising a porous substrate, and
ii) first and second layers of metal foil comprising lithium and/or sodium, wherein the reinforcement layer is disposed between the first and second metal foil layers and bonded together to form a composite structure having a thickness of 100 microns or less; and
wherein the porous substrate comprises a non-conducting fibrous material.

US Pat. No. 10,461,314

NONAQUEOUS ELECTROLYTE BATTERY AND BATTERY PACK

KABUSHIKI KAISHA TOSHIBA,...

1. A nonaqueous electrolyte battery comprising:an electrode group formed by winding a positive electrode, a negative electrode, and a separator arranged between the positive electrode and the negative electrode, and
a nonaqueous electrolyte,
wherein a tension modulus of the separator in a winding direction is 200 (N/mm2) to 2,000 (N/mm2).

US Pat. No. 10,461,312

POSITIVE-ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY AND METHOD FOR PRODUCING THE SAME, AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY

SUMITOMO METAL MINING CO....

1. A cathode active material for a nonaqueous electrolyte secondary battery represented by a general formula:LitNi1-x-y-zCoxAlyTizO2
wherein 0.98?t?1.10, 0?x?0.30, 0.03?y?0.15, 0.001?z?0.03; and comprising a hexagonal lithium-containing composite oxide with a layer structure of secondary particles having primary particles,
wherein the cathode active material is made by firing the lithium-containing composite oxide at over 760° C. and not higher than 780° C. thereby forming an intermediate of a lithium titanium oxide and a lithium nickel dioxide in a grain boundary between the primary particles.

US Pat. No. 10,461,311

DEVICES, SYSTEMS, AND METHODS FOR MOLTEN FLUID ELECTRODE APPARATUS MANAGEMENT

Vissers Battery Corporati...

1. An apparatus comprising:a plurality of negative electrode reservoirs configured to contain a negative electrode material;
a plurality of positive electrode reservoirs configured to contain a positive electrode material;
a heating system configured to heat negative electrode material within a selected negative electrode reservoir of the plurality of negative electrode reservoirs to maintain the negative electrode material contained in the selected negative electrode reservoir in a fluid state and configured to heat positive electrode material in a selected positive electrode reservoir to maintain the positive electrode material contained in the selected positive electrode reservoir in the fluid state while maintaining, in a non-fluid state, negative electrode material in a non-selected negative electrode reservoir and positive electrode material in a non-selected positive electrode reservoir;
a reaction chamber comprising a solid electrolyte positioned in the reaction chamber to form a positive electrode region on a first side of the solid electrolyte and to form a negative electrode region on a second side of the solid electrolyte; and
an electrode material distribution system configured to cycle fluid positive electrode material between the selected positive electrode reservoir and the positive electrode region and configured to transfer, during a discharge state of the apparatus, fluid negative electrode material from the selected negative electrode reservoir to the negative electrode region.

US Pat. No. 10,461,310

MANUFACTURING METHOD FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A manufacturing method for a non-aqueous electrolyte secondary battery comprising:forming a mixture containing a binder, inorganic filler particles, and a solvent;
wet granulating the mixture by stirring and crushing the mixture to obtain granules containing composite particles and a solvent,
wherein the composite particles contain the inorganic filler particles and the binder, and the granules have a particle size of 10 ?m to 200 ?m;
pressing the granules in a state in which the solvent remains to form a green compact sheet; and
disposing the green compact sheet on a surface of a positive electrode mixture layer or a negative electrode mixture layer,
wherein a solid content concentration of the granules is equal to or higher than 70 mass % and lower than 100 mass %, and
the particle size is a particle size at a cumulative value of 50% in a volume-based particle size distribution measured according to a laser diffraction/scattering method.

US Pat. No. 10,461,308

SEALED BATTERY AND METHOD OF MANUFACTURE

TOYOTA JIDOSHA KABUSHIKI ...

1. A sealed battery comprising:a case provided with a case body having an opening therein and a lid that is sized so as to be capable of closing the opening and that has an electrolyte fill port;
an electrode assembly that is housed in the case; and
an electrolyte solution,
wherein the lid is provided with a filler plug that is welded to the lid so as to close the fill port, and an outside surface of the lid has a surface treated region forming an electrolyte-repelling region surrounding the weld where the filler plug is welded and another surface treated region forming an electrolyte-affinity region near the electrolyte-repelling region, and
wherein,
upon the electrolyte solution contacting the electrolyte-repelling region of the outside surface of the lid, the electrolyte-repelling region imparts a contact angle of 100° or more between a surface of the electrolyte-repelling region and the electrolyte solution, and
upon the electrolyte solution contacting the electrolyte-affinity region of the outside surface of the lid, the electrolyte-affinity region imparts a contact angle of 80° or less between a surface of the electrolyte-affinity region and the electrolyte solution, and
the electrolyte repellency of the electrolyte-repelling region is higher than the electrolyte-affinity region, and the electrolyte affinity of the electrolyte-affinity region is higher than the electrolyte-repelling region.

US Pat. No. 10,461,307

DEVICE FOR PROTECTING RECHARGEABLE BATTERY

Samsung SDI Co., Ltd., Y...

1. A device for protecting a rechargeable battery comprising:a plurality of unit cells contained in a module case and coupled in series between a first module electrode terminal and a second module electrode terminal;
a plurality of bypass switches separated from the plurality of unit cells, electrically connected to each other, having a portion thereof physically contacting a first electrode terminal of a respective one of the unit cells, and configured to close according to an internal pressure of the respective one of the unit cells; and
a plurality of bypass fuses for connecting adjacent ones of the plurality of unit cells, and for connecting a last unit cell of the plurality of unit cells and the second module electrode terminal, respectively.

US Pat. No. 10,461,304

CYLINDRICAL BATTERY

SANYO Electric Co., Ltd.,...

1. A cylindrical battery comprising: an electrode body in which a negative electrode plate and a positive electrode plate to which a plurality of positive electrode leads is connected are wound with a separator interposed therebetween; an upper insulating plate disposed on the electrode body; a sealing body; a current collector plate disposed between the upper insulating plate and the sealing body; and an outer can,wherein the upper insulating plate has at least one through-hole,
the plurality of positive electrode leads includes at least one first positive electrode lead disposed at an inner circumference side of the upper insulating plate and at least one second positive electrode lead disposed at an outer circumference side of the upper insulating plate,
the first positive electrode lead extends between the upper insulating plate and the current collector plate after passing through the through-hole of the upper insulating plate and is bent onto the current collector plate at an outer circumference portion thereof,
the second positive electrode lead extends along the outside of the outer circumference portion of the upper insulating plate and is bent onto the current collector plate at the outer circumference portion thereof,
the first positive electrode lead and the second positive electrode lead are connected to the current collector plate, and
the current collector plate is electrically connected to the sealing body.

US Pat. No. 10,461,302

BATTERY WIRING MODULE

SUMITOMO WIRING SYSTEMS, ...

1. A battery wiring module comprising:a housing that is to be attached to a secondary battery for a vehicle;
bus bars to be connected to electrodes of the secondary battery that are inserted into the inside of the housing; and
electrical wires connected to the bus bars,
the housing including a first divided housing and a second divided housing each having a bus bar housing portion that houses one of the bus bars, a first cover portion that is provided in one piece with the first divided housing and covers an opening of the bus bar housing portion of the first divided housing, a second cover portion that is provided in one piece with the second divided housing and covers an opening of the bus bar housing portion of the second divided housing, the bus bar housing portions of the first and second divided housings being adjacent to each other, and the first and second cover portions being adjacent to each other,
wherein the first cover portion is provided with a tongue piece having a first extending portion and a second extending portion, the first extending portion extends from the first cover portion toward the bus bar housing portion, and the second extending portion extends from an end of the first extending portion toward the second cover portion and overlaps the second cover portion in the opening direction of the bus bar housing portion.

US Pat. No. 10,461,300

BATTERY MODULE

KABUSHIKI KAISHA TOYOTA J...

1. A battery module comprising:an array body in which a plurality of battery cells are arranged;
a plurality of harnesses extending in an array direction of the battery cells in the array body and having connecting terminals of tips connected to electrode terminals of the plurality of battery cells;
a binding member configured to bind the plurality of harnesses in a harness bundle; and
an elastic body disposed at one array end of the battery cells in the array body, wherein
the plurality of harnesses branched off from the binding member have flexure between a position at which the plurality of harnesses are bound by the binding member and connecting positions of the electrode terminals and the connecting terminals,
the plurality of harnesses are pulled toward the array body from the one array end side at which the elastic body is disposed, and
the position at which the plurality of harnesses are bound by the binding member is disposed closer to the elastic body than the connecting position of the electrode terminal and the connecting terminal.

US Pat. No. 10,461,292

ENERGY STORAGE APPARATUS AND COVER MEMBER

GS YUASA INTERNATIONAL LT...

1. An energy storage apparatus comprising:a spacer;
an energy storage device disposed adjacently to the spacer in a first direction and having an external terminal on an end surface thereof in a second direction orthogonal to the first direction; and
a cover member holding a bus bar connected to the external terminal and extending along the end surface of the energy storage device having the external terminal,
wherein the spacer has a first connecting portion to which the cover member is connected on an end portion thereof in the second direction, and
the cover member has a second connecting portion which engages with the first connecting portion in a state where movement of the cover member in a direction away from the spacer in the second direction is restricted,
wherein the first connecting portion is disposed on the end portion of spacer at an intermediate position in a third direction orthogonal to the first and the second directions.

US Pat. No. 10,461,290

ELECTRIC STORAGE APPARATUS, AND METHOD FOR PRODUCING ELECTRIC STORAGE APPARATUS

GS YUASA INTERNATIONAL LT...

1. An electric storage apparatus, comprising: a plurality of electric storage devices which are arranged in a first direction; and an abutment arranged in alignment with, and disposed on both ends of the electric storage devices in the first direction, wherein each of the abutments includes at least three members stacked in the first direction, wherein each of the members includes a positioning part including a first surface forming a recess recessed in the first direction and a back surface of the first surface forming a projection projecting opposite to the plurality of electric storage devices, in the first direction,wherein the positioning parts of the members are arranged at positions corresponding to one another such that a first one of the positioning parts, a second one of the positioning parts, and a third one of the positioning parts are sequentially arranged in the first direction,
wherein adjacent members are relatively positioned by inserting a positioning part of one of the adjacent members into a positioning part of an other of the adjacent members,
wherein the first one of the positioning parts that is arranged on a side closest to the electric storage devices includes an insulating member, and the second one of the positioning parts and the third one of the positioning parts comprise a metal including a molded metal plate subjected to a metal plating, and
wherein, in the first direction, the second one of the positioning parts is disposed between the recess of the first one of the positioning parts and the recess of the third one of the positioning parts of the members.

US Pat. No. 10,461,289

PORTABLE BATTERY PACK COMPRISING A BATTERY ENCLOSED BY A WEARABLE AND REPLACEABLE POUCH OR SKIN

LAT ENTERPRISES, INC., R...

1. A portable battery pack comprising:a wearable pouch and one or more batteries enclosed in the wearable pouch;
wherein the one or more batteries include:
at least one battery element;
a battery cover including one or more channels to accommodate wires of one or more flexible omnidirectional leads and a compartment sized to receive the at least one battery element;
a battery back plate attached to the battery cover; and
the one or more flexible omnidirectional leads including a connection portion and a wiring portion, wherein a flexible spring is provided around the wiring portion, wherein the wiring portion and the flexible spring are held securely in the one or more channels in the battery cover such that a portion of the flexible spring is positioned inside the battery cover and a portion of the flexible spring is positioned outside the battery cover;
wherein the wearable pouch includes:
a closeable opening through which the one or more batteries are operable to be removed from the wearable pouch; and
one or more openings through which the one or more flexible omnidirectional leads from the one or more batteries can be accessed.

US Pat. No. 10,461,288

BATTERY MODULE AND BATTERY PACK INCLUDING SAME

LG CHEM, LTD., Seoul (KR...

1. A battery module comprising:a cartridge stack comprising a plurality of secondary batteries which each comprise an electrode lead, and a plurality of cartridges which each accommodate at least one of the plurality of secondary batteries such that at least a portion of each electrode lead of each secondary battery protrudes outwardly, and which are stacked in a plurality of stages; and
an interconnect board (“ICB”) housing comprising a stepped connection end, a power terminal installed fixedly to the stepped connection end, and a bus bar electrically connecting each electrode lead with the power terminal, and mounted on a surface of the cartridge stack,
wherein the bus bar comprises a first connection part which is provided in opposition to the power terminal, having the stepped connection end therebetween, and is connected with each electrode lead, a second connection part which is provided in opposition to the first connection part, having the stepped connection end therebetween, and is connected with the power terminal, and a connection part which connects the first connection part with the second connection part and is embedded in the stepped connection end such that the connection part is hidden by the stepped connection end.

US Pat. No. 10,461,287

BATTERY PACK

Samsung SDI Co., Ltd., G...

1. A battery pack comprising:secondary batteries;
a case accommodating the secondary batteries, the case comprising:
an upper case;
a lower case; and
plates disposed on each of the upper case and the lower case and each of the plates having holes, wherein each hole corresponds to an end of each of a single one of the secondary batteries;
alignment members attached to the plate of the upper case; and
a conductive coupling tap,
wherein each of the alignment members comprises a protrusion covering at least a portion of one or more holes,
wherein the alignment member is a separate component from the conductive coupling tap
wherein the conductive coupling tap is configured to electrically couple to the ends of corresponding ones of secondary batteries corresponding to the one or more holes,
wherein a width of each of the alignment members is greater than an internal interval between two adjacent ones of the secondary batteries, and
wherein each of the alignment members covers portions of at least two adjacent holes of the plates.

US Pat. No. 10,461,286

BATTERY PACK

LG CHEM, LTD., Seoul (KR...

1. A battery pack comprising:a battery module comprising battery cells sequentially stacked, air flow paths between the battery cells, and at least one cooling duct located on an outermost side of the battery cells to define an air flow space configured to communicate with the air flow paths, the at least one cooling duct having an air passing hole open toward an upper portion of the battery module to communicate with the air flow space;
a lower case configured to load the battery module and the at least one cooling duct therein, the lower case being separate from the at least one cooling duct; and
an upper case coupled to the lower case and configured to cover the battery module and the at least one cooling duct, the upper case having a vent structure on each cooling duct of the at least one cooling duct,
wherein the at least one cooling duct is located between the lower case and the battery cells, and
wherein the vent structure comprises an inner air passage unit configured to define an air passage and having a rectangular-tunnel-type window frame configured to communicate with the air passing hole through one side of the air passage and penetrate a sidewall of the upper case through the other side of the air passage, and an outer air passage unit detachably inserted along an inner wall of the window frame, the outer air passage unit having through holes in a front wall located on a front side of the window frame and in a rear wall located on a rear side of the window frame, and the outer air passage unit is entirely located within an outermost perimeter of a sidewall of the lower case.

US Pat. No. 10,461,285

NONAQUEOUS ELECTROLYTE SECONDARY BATTERY

SEIKO INSTRUMENTS INC., ...

1. A nonaqueous electrolyte secondary battery, comprising:a bottomed cylindrical positive electrode casing; and
a negative electrode casing fixed to an opening of the positive electrode casing through a gasket, such that an accommodation space is defined between the positive electrode casing and the negative electrode casing,
wherein the opening of the positive electrode casing is sealed to the negative electrode casing side by a caulking material of the gasket to seal the accommodation space,
where the caulking material has a uniform compression ratio of at least 50%, and
where a caulking tip end of the positive electrode casing in the opening is inward of a tip end of the negative electrode casing, and
a diameter d of the nonaqueous electrolyte secondary battery is in a range of 6.6 mm to 7.0 mm, a height h1 of the nonaqueous electrolyte secondary battery is in a range of 1.9 mm to 2.3 mm, at least a part of a side surface portion of the positive electrode casing on an opening side has a curved surface, a radius of curvature R of the curved surface is in a range of 0.8 mm to 1.1 mm, and a height h2 of the positive electrode casing is in a range of 65% to 73% with respect to the height h1 of the nonaqueous electrolyte secondary battery.

US Pat. No. 10,461,279

TOP-OLEDS WITH MULTILAYER OUTPUT COUPLING UNIT AND FLAT PANEL DISPLAY DEVICES USING THE SAME

Shenzhen China Star Optoe...

1. A top organic light emitting diode (Top-OLED), comprising:a light emitting unit;
a light output coupling unit configured on a light output surface of the light emitting unit, wherein the light output coupling unit is configured with a first light emitting coupling layer and a second first light emitting coupling layer configured on the light output surface of the light emitting unit in sequence, and a refractive index of the first light emitting coupling layer is greater than a refractive index of the second light emitting coupling layer;
the light output coupling unit further comprises a third light emitting coupling layer being stacked on the second first light emitting coupling layer, wherein the refractive index of the second light emitting coupling layer is greater than a refractive index of the third light emitting coupling layer;
wherein the first light emitting coupling layer is a first NPB layer having the refractive index greater than 1.75, the second light emitting coupling layer is a single layer structure having the refractive index in a range from 1.4 to 1.75 and formed by conducting a co-vapor deposition process of NPB and LiF in a ratio 1:1, and the third light emitting coupling layer is a first LiF layer having the refractive index in a range from 1.1 to 1.4.

US Pat. No. 10,461,277

DISPLAY DEVICE

Japan Display Inc., Toky...

1. A display device comprising:a display region arranged with a plurality of pixels; anda sealing layer covering the display region,wherein
the plurality of pixels are arranged along a first direction and a second direction intersecting the first direction;
the sealing layer includes an insulation layer having a density pattern;
the density pattern includes a sparse region being a low density region and a dense region being a high density region;
the low density region has the insulation layer with a lower density than an average density within the display region;
the high density region has the insulation layer with a higher density than an average density within the display region;
the high density region is comprised of a plurality of island shaped regions;
the plurality of island shaped regions are individually separated; and
a region other than the high density region is comprised of the low density region in a plan view of the display region.

US Pat. No. 10,461,274

FLEXIBLE DISPLAY DEVICE INCLUDING NOTCH PATTERN IN FOLDING AREA AND FLEXIBLE ELECTRONIC DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A display device, comprising:a display panel comprising a flexible substrate, the flexible substrate comprising:
a first portion corresponding to a display area of the display panel, the display area being configured to display an image; and
a second portion extending from the first portion, the second portion corresponding to a non-display area of the display panel adjacent to the display area,
wherein the display panel is configured to bend in a folding area based on a folding line extending in a width direction of the display panel and overlapping the flexible substrate such that a first non-folding area of the display panel and a second non-folding area of the display panel are positioned at opposite sides of the folding area, and
wherein a first notch pattern is formed in the flexible substrate of the display panel in an overlapping area in which a part of the second portion of the flexible substrate is removed in a region corresponding to a part of the folding area such that the first notch pattern reduces a width of the display panel in a region comprising the overlapping area.

US Pat. No. 10,461,270

ORGANIC EL DISPLAY DEVICE

SHARP KABUSHIKI KAISHA, ...

1. An organic EL display device comprising:an organic EL display panel including a plastic substrate exhibiting flexibility and an organic EL element formed on the plastic substrate;
a first inorganic layer provided on an upper surface of the organic EL display panel; and
a second inorganic layer provided on a lower surface of the organic EL display panel as a surface of the plastic substrate opposite to a first inorganic layer side, wherein
an entire thickness of the organic EL display device is equal to or less than 74 ?m; and
distortion rates of the first inorganic layer and the second inorganic layer in a case where a bending radius of the organic EL display device is 3.5 mm are ?1 to +1%.

US Pat. No. 10,461,268

FLEXIBLE DISPLAY PANEL AND DISPLAY DEVICE

SHANGHAI TIANMA MICRO-ELE...

1. A flexible display panel, comprisinga substrate;
an inorganic layer disposed on a side of the substrate, wherein the inorganic layer comprises a recessed region and a non-recessed region, and the recessed region comprises a recess with an opening facing away from the substrate; and
an organic layer disposed on a side of the inorganic layer away from the substrate, wherein the organic layer comprises a filling portion, and a projection of the filling portion in a direction perpendicular to the substrate is located in the recess of the recessed region;
wherein a surface of the filling portion away from the substrate is a concave surface, and the concave surface is recessed toward the substrate, wherein the flexible display panel comprises a bending region and a non-bending region,
wherein in at least one first cross-section, the surface of the filling portion away from the substrate is a concave surface recessed toward the substrate, and an projection of the recessed region in the direction perpendicular to the substrate covers the bending region, and
wherein the at least one first cross-section is perpendicular to the substrate, and the at least one first cross-section intersects an extension direction of a bending axis of the bending region.

US Pat. No. 10,461,265

ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. An organometallic compound represented by Formula 1:
wherein, in Formula 1,
M is selected from Ir, Eu, Tb, and Tm;
X11 and X14 are each independently selected from C and N;
X12 and X13 are C;
A11 is selected from C1-C20 heterocyclic groups;
A12 is selected from a C5-C20 cyclic group and a C1-C20 heterocyclic group;
A13 is selected from a pyrrole and an indole;
R11 to R13 are each independently selected from a hydrogen, a deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —C(?O)(Q1), —Si(Q1)(Q2)(Q3), and —N(Q1)(Q2), wherein R11 and R12 are optionally linked to each other to form a saturated or unsaturated ring; and Q1 to Q3 are each independently selected from a hydrogen, a deuterium, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C6-C20 aryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group;
n is selected from 1 and 2;
L is is a ligand represented by one of Formulae 2-1 to 2-6:

wherein, in Formulae 2-1 to 2-6,
A21 is selected from a C5-C20 cyclic group and a C1-C20 heterocyclic group;
X21 and X22 are each independently selected from C and N;
Y21 is selected from a single bond, a double bond, a substituted or unsubstituted C1-C5 alkylene group, a substituted or unsubstituted C2-C5 alkenylene group, and a substituted or unsubstituted C6-C10 arylene group;
Z21 and Z22 are each independently selected from N, O, N(R25), P(R25)(R26), and As(R25) (R26) ,
Z23 is selected from P and As;
R21 to R26 are each independently selected from a hydrogen, a deuterium, —F, —CI, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group;
b21 to b24 are each independently selected from 1, 2, and 3; and
* and *? are each independently a binding site with an adjacent atom; and
m is selected from 1, 2, 3, and 4.

US Pat. No. 10,461,263

CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A condensed cyclic compound represented by Formula 1:
wherein A1 in Formula 1 is selected from groups represented by Formulae 2A to 2F,
m1 in Formula 1 is an integer from 1 to 5,
A2 in Formulae 2A to 2F is selected from groups represented by Formulae 3A to 3C,
m2 in Formulae 2A to 2F is an integer from 1 to 5,
rings B1, B2, B11, and B12 in Formulae 2A to 2F and 3B are each independently a C5-C60 carbocyclic group or a C1-C60 heterocyclic group,
X1 in Formulae 2B, 2D, and 2F is selected from O, S, C(R23)(R24), N(R25), and Si(R26)(R27),
L1, L2, L11, L21, and L22 in Formulae 1, 2A to 2F, and 3C are each independently selected from a substituted or unsubstituted C3-C10 cycloalkylene group, a substituted or unsubstituted C1-C10 heterocycloalkylene group, a substituted or unsubstituted C3-C10 cycloalkenylene group, a substituted or unsubstituted C1-C10 heterocycloalkenylene group, a substituted or unsubstituted C6-C60 arylene group, a substituted or unsubstituted C1-C60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
a1, a2, a11, a21, and a22 in Formulae 1, 2A to 2F, and 3C are each independently an integer from 0 to 5,
Ar11, Ar21, and Ar22 in Formulae 2A to 2D and 3C are each independently selected from a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group,
b11, b21, and b22 in Formulae 2A to 2D and 3C are each independently an integer from 1 to 5,
R1 to R10, R21 to R27, R31, and R32 in Formulae 1, 2A to 2F, 3A, and 3B are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(?O)(Q1), —S(?O)2(Q1), and —P(?O)(Q1)(Q2),
c21 to c27, c31, and c32 in Formulae 2A to 2F, 3A, and 3B are each independently an integer from 0 to 5,
n1 in Formulae 2A to 2F is an integer from 0 to 5,
* in Formulae 2A to 2F and 3A to 3C is a binding site to a neighboring atom, and
at least one substituent of the substituted C3-C10 cycloalkylene group, the substituted C1-C10 heterocycloalkylene group, the substituted C3-C10 cycloalkenylene group, the substituted C1-C10 heterocycloalkenylene group, the substituted C6-C60 arylene group, the substituted C1-C60 heteroarylene group, the substituted divalent non-aromatic condensed polycyclic group, the substituted divalent non-aromatic condensed heteropolycyclic group, the substituted C1-C60 alkyl group, the substituted C2-C60 alkenyl group, the substituted C2-C60 alkynyl group, the substituted C1-C60 alkoxy group, the substituted C3-C10 cycloalkyl group, the substituted C1-C10 heterocycloalkyl group, the substituted C3-C10 cycloalkenyl group, the substituted C1-C10 heterocycloalkenyl group, the substituted C6-C60 aryl group, the substituted C6-C60 aryloxy group, the substituted C6-C60 arylthio group, the substituted C1-C60 heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group is selected from:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(?O)(Q11), —S(?O)2(Q11), and —P(?O)(Q11)(Q12);
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group;
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(?O)(Q21), —S(?O)2(Q21), and —P(?O)(Q21)(Q22); and
—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(?O)(Q31), —S(?O)2(Q31), and —P(?O)(Q31)(Q32),
wherein Q1 to Q3, Q11 to Q13, Q21 to Q23, and Q31 to Q33 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryl group substituted with a C1-C60 alkyl group, a C6-C60 aryl group substituted with a C6-C60 aryl group, a terphenyl group, a C1-C60 heteroaryl group, a C1-C60 heteroaryl group substituted with a C1-C60 alkyl group, a C1-C60 heteroaryl group substituted with a C6-C60 aryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group.

US Pat. No. 10,461,259

ORGANIC LIGHT EMITTING DEVICE

LG CHEM, LTD., Seoul (KR...

1. An organic light emitting device comprising:a first electrode;
a hole transport layer;
a light emitting layer;
a power efficiency enhancement layer;
a gradation enhancement layer; and
a second electrode,
wherein the power efficiency enhancement layer comprises a compound represented by Chemical Formula 1 below, and
the gradation enhancement layer comprises a compound represented by Chemical Formula 2 below:

in Chemical Formula 1,
Ar1 and Ar2 are each independently a substituted or unsubstituted C6-60 aryl; or a substituted or unsubstituted C2-60 heteroaryl containing at least one of O, N, Si and S,
each L is independently a direct bond, or a substituted or unsubstituted C6-60 arylene,
each A is independently a substituted or unsubstituted C6-60 arylene having a meta- or ortho-linking group,
each B is independently a substituted or unsubstituted C6-60 aryl; or a substituted or unsubstituted C2-60 heteroaryl containing at least one of O, N, Si and S,
l is an integer of 0 to 2,
a is an integer of 1 or 2, and
h is an integer of 1 or 2,

in Chemical Formula 2,
Ar3 and Ar4 are each independently a substituted or unsubstituted C6-60 aryl; or a substituted or unsubstituted C2-60 heteroaryl containing at least one of O, N, Si and S,
each P is independently a direct bond, or a substituted or unsubstituted C6-60 arylene,
each Q is independently a substituted or unsubstituted C6-60 arylene having a para-linking group,
each R is independently a substituted or unsubstituted C6-60 aryl; or a substituted or unsubstituted C2-60 heteroaryl containing at least one of O, N, Si and S,
p is an integer of 0 to 2,
q is an integer of 1 or 2, and
r is an integer of 1 or 2.

US Pat. No. 10,461,256

COMPOUND AND PHOTOELECTRIC DEVICE, IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME

Samsung Electronics Co., ...

1. A compound represented by Chemical Formula 1:
wherein, in Chemical Formula 1,
Ar1 to Ar3 are independently one of a substituted or unsubstituted C6 to C30 arylene group, a substituted or unsubstituted C6 to C30 arene group, a substituted or unsubstituted C3 to C30 heterocyclic group, and a combination thereof in a condensed ring,
R3 is one of hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, and a combination thereof,
G is one of a single bond, —O—, —S—, —Se—, —N?, —(CRfRg)k—, —NRh—, —SiRiRj—, —GeRkRl, —(C(Rm)?C(Rn))—, and SnRoRp wherein Rf, Rg, Rh, Ri, Rj, Rk, Rl, Rm, Rn, Ro and Rp are independently one of hydrogen, a halogen, a substituted or unsubstituted C1 to C10 alkyl group, a substituted or unsubstituted C1 to C10 alkoxy group, and a substituted or unsubstituted C6 to C12 aryl group, and Ri and Rj, Rk and Rl, Rm and Rn, and Ro and Rp are independently present or linked with each other to provide a ring, and k is one of 1 and 2,
Z1 is one of O or CRbRc, wherein Rb and Rc are independently one of hydrogen, a substituted or unsubstituted C1 to C10 alkyl group, a cyano group, and a cyano-containing group, provided that at least one of Rb and Rc is a cyano group or a cyano-containing group, and
L1 is one of linking groups of Group 1,

wherein, in Group 1,
X1 is one of —Se—, —Te—, —O—, —S(?O)—, —S(?O)2—, —NRa—, —SiRbRc—, and —GeRdRe—,
X2 and X3 are independently one of —S—, —Se—, —Te—, —O—, —S(?O)—, —S(?O)2—, —NRa—, —SiRbRc—, and —GeRdRe—,
Ra to Re are independently one of hydrogen and a substituted or unsubstituted C1l to C10 alkyl group,
R1, R2, R4, and R5 are independently one of hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a halogen, a cyano group, a cyano-containing group, and a combination thereof, and
* is a linking point.

US Pat. No. 10,461,252

RESISTIVE RANDOM ACCESS MEMORY

National Sun Yat-Sen Univ...

1. A resistive random access memory comprising:a first electrode;
a second electrode separate from the first electrode;
an enclosing layer forming a first via-hole; and
an oxygen-containing resistance changing layer arranged for the first via-hole, wherein the first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer, wherein each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen, wherein each of the first electrode, the second electrode and the enclosing layer abuts with the oxygen-containing resistance changing layer, wherein the enclosing layer is mounted on one of the first and second electrodes, and
wherein the oxygen-containing resistance changing layer is formed from oxides doped with chlorine and is completely located in the first via-hole, wherein the first electrode is not parallel to the second electrode, wherein the enclosing layer encloses the first electrode but does not enclose the second electrode, and wherein the enclosing layer is in contact with a bottom face of the second electrode.

US Pat. No. 10,461,247

INTEGRATED MAGNETIC RANDOM ACCESS MEMORY WITH LOGIC DEVICE HAVING LOW-K INTERCONNECTS

GLOBALFOUNDRIES SINGAPORE...

1. A device comprising:a substrate defined with at least first, second and third regions, wherein the substrate includes a first interlevel dielectric (ILD) layer;
a first upper dielectric layer disposed over the first ILD layer, wherein the first upper dielectric layer serves as a lower portion of a via level of a second ILD layer above the first ILD layer, the first upper dielectric layer includes a bottom electrode trench disposed in the second region and an alignment trench disposed in the third region, the bottom electrode trench exposes a metal line in the first ILD layer, the alignment trench has an alignment trench depth which is deeper than a bottom electrode trench depth of the bottom electrode trench, and the alignment trench extends into the first ILD layer;
a bottom electrode disposed in the bottom electrode trench;
a bottom electrode alignment mark disposed in the alignment trench; and
a magnetic tunnel junction (MTJ) element disposed on the bottom electrode,
wherein the bottom electrode comprises a bottom electrode material disposed in the bottom electrode trench, and the bottom electrode alignment mark comprises the bottom electrode material disposed in the alignment trench.

US Pat. No. 10,461,246

MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

TAIWAN SEMICONDUCTOR MANU...

1. A memory device, comprising:a bottom electrode;
a resistance switching element over the bottom electrode;
a top electrode over the resistance switching element;
an interlayer dielectric layer surrounding the resistance switching element;
a first spacer between the interlayer dielectric layer and a sidewall of the resistance switching element, wherein a bottom surface of the first spacer is over a top surface of the bottom electrode; and
a metal-containing compound layer between the interlayer dielectric layer and the sidewall of the resistance switching element.

US Pat. No. 10,461,245

MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

TOSHIBA MEMORY CORPORATIO...

1. A magnetic memory device comprising:a stack structure which is formed on an underlying area and includes a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer;
a protective insulating film covering the stack structure and provided along upper and side surfaces of the stack structure; and
an interlayer insulating film covering upper and side surfaces of the protective insulating film,
wherein:
a portion of the protective insulating film formed on the side surface of the stack structure is thicker than a portion of the protective insulating film formed on the upper surface of the stack structure,
the protective insulating film includes a first protective insulating film formed along the side surface of the stack structure, and a second protective insulating film covering the stack structure and the first protective insulating film,
a side surface of the first magnetic layer, a side surface of the nonmagnetic layer, and a side surface of the second magnetic layer are provided continuously without a step,
the first protective insulating film covers the side surfaces of the first magnetic layer, the nonmagnetic layer, and the second magnetic layer, and
an oxygen concentration at a boundary between the first protective insulating film and the second protective insulating film is higher than that within the first protective insulating film and that within the second protective insulating film.

US Pat. No. 10,461,244

LAMINATED STRUCTURE AND SPIN MODULATION ELEMENT

TDK CORPORATION, Tokyo (...

1. A laminated structure, comprising:a ferromagnetic layer; and
a multiferroic layer formed on one surface of the ferromagnetic layer,
wherein a surface of the multiferroic layer on the ferromagnetic layer side includes a first region, a crystalline phase of which is rhombohedral, and a second region, a crystalline phase of which is tetragonal,
a proportion of the first region occupying the surface is 30% or more and 70% or less, and
a proportion of the second region occupying the surface is 30% or more and 70% or less.

US Pat. No. 10,461,241

METHOD FOR MANUFACTURING RECTANGULAR PARALLELEPIPED-SHAPED SINGLE CRYSTAL, RECTANGULAR PARALLELEPIPED-SHAPED SINGLE CRYSTAL, METHOD FOR MANUFACTURING CERAMICS, CERAMICS, PIEZOELECTRIC ELEMENT, PIEZOELECTRIC DEVICE, AND ELECTRONIC DEVICE

Canon Kabushiki Kaisha, ...

1. A rectangular parallelepiped-shaped single crystal containing sodium niobate of a perovskite structure as a main component, whereinthe rectangular parallelpiped-shaped single crystal contains bismuth in an amount of 0.05 mol or more and 0.15 mol or less per mole of the sodium niobate,
a Na/Nb ratio of the rectangular parallelepiped-shaped single crystal is 0.82 or more and 1.00 or less, and
a ratio of a longest side length (Lmax) to a shortest side length (Lmin) of the rectangular parallelepiped is in a range of Lmax/Lmin of 4.0?Lmax/Lmin?8.5.

US Pat. No. 10,461,240

PIEZOELECTRIC SENSORS AND METHODS FOR MANUFACTURING THE SAME

BOE TECHNOLOGY GROUP CO.,...

1. A piezoelectric sensor, comprising a first electrode layer, a second electrode layer and a piezoelectric thin film layer between the first electrode layer and the second electrode layer, the piezoelectric sensor further comprising:a first functional module and a second functional module, both of which are connected to the second electrode layer, wherein the first functional module is configured to sense a pressure applied to the piezoelectric sensor in a first direction, and the second functional module is configured to sense a pressure applied to the piezoelectric sensor in a second direction, and the first direction and the second direction are perpendicular to each other.

US Pat. No. 10,461,238

THERMOELECTRIC CONVERSION STRUCTURE AND METHOD FOR MAKING THE SAME

NEC Corporation, Tokyo (...

1. A thermoelectric conversion structure, comprising:a plurality of thermoelectric conversion unit structures, wherein each thermoelectric conversion unit structure comprises a magnetic fine particle comprising a magnetic material that exhibits a spin Seebeck effect and an electromotive body that covers the magnetic fine particle,
wherein the electromotive bodies of the plurality of thermoelectric conversion unit structures are connected to each other,
the plurality of thermoelectric conversion unit structures forms an aggregate, and
all surfaces of each of the magnetic fine particles are in direct physical contact with the aggregate.

US Pat. No. 10,461,236

THERMOELECTRIC GENERATOR

KABUSHIKI KAISHA TOSHIBA,...

1. A thermoelectric generator comprising:a thermoelectric device that converts heat energy into electric energy; and
a DC to DC converter that converts an input voltage applied by the thermoelectric device to a voltage higher than the input voltage applied by the thermoelectric device, wherein
the input voltage applied by the thermoelectric device is higher than a voltage which is half an open voltage of the thermoelectric device,
the DC to DC converter includes:
a first switch which is ON/OFF-controlled in accordance with a switch control signal whose ON time is variable;
an inductor connected to the first switch;
a second switch that switches between a state where a current is supplied from the thermoelectric device to the inductor and a state where no current is supplied from the thermoelectric device to the inductor; and
a sample and hold circuit that samples the open voltage of the thermoelectric device when the second switch is in the state where no current is supplied from the thermoelectric device to the inductor, and holds the sampled open voltage of the thermoelectric device,
the input voltage applied by the thermoelectric device increases or decreases in accordance with the ON time,
the ON time is subjected to feedback control such that the input voltage applied by the thermoelectric device approaches to a value obtained by multiplying the held open voltage of the thermoelectric device by a gain, and
the gain is determined based on an output resistance of the thermoelectric device, a parasitic resistance of the inductor, a parasitic resistance of the first switch, and a parasitic resistance of the second switch.

US Pat. No. 10,461,235

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

NICHIA CORPORATION, Anan...

1. A method of manufacturing a semiconductor device, the method comprising:disposing a substrate metal film on an upper surface of a substrate made of a metal;
disposing a first element metal film on a lower surface of a first element;
disposing a second element metal film on a lower surface of a second element;
after disposing the substrate metal film, the first element metal film and the second element metal film, bonding the first element and the second element to the substrate so that an upper surface of the substrate metal film is in contact with a lower surface of the first element metal film and a lower surface of the second element metal film;
after bonding the first element and the second element to the substrate, oxidizing at least a portion of a region of the upper surface of the substrate metal film other than regions in contact with the first element metal film and the second element metal film; and
after oxidizing the at least portion of the region of the upper surface of the substrate metal film other than the regions in contact with the first element metal film and the second element metal film, disposing a wiring electrically connecting the first element and the second element, across and above a region including the region oxidized in the oxidizing step.

US Pat. No. 10,461,233

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING DEVICE

LG INNOTEK CO., LTD., Se...

1. A light emitting device package, comprising:a first lead frame;
a light emitting device disposed on the first lead frame;
a second lead frame spaced apart from the first lead frame in a first direction;
a protective device disposed on the second lead frame; and
a body coupled to the first and second lead frames,
wherein the body including a cavity exposing a portion of an upper surface of the first lead frame and an upper surface of the second lead frame,
wherein the cavity includes first to fourth inner side surfaces which are inclined, respectively,
wherein the first inner side surface faces the second inner side surface in the first direction,
wherein the third inner side surface faces to the fourth inner side surface in a second direction,
wherein the first to fourth inner side surfaces face the first to fourth sides of the light emitting device, respectively,
wherein the cavity has a first bottom surface that exposes a part of an upper surface of the first lead frame; a second bottom surface on which a part of an upper surface of the second lead frame is exposed and on which the protection device is disposed; and a third bottom surface on which a part of the upper surface of the second lead frame is exposed and spaced apart from the second bottom surface,
wherein the first lead frame comprises a first stepped portion disposed along an edge of a lower surface thereof and at least one first through hole,
wherein the first through hole includes a second stepped portion disposed at an inner side thereof,
wherein the cavity includes a first recess portion exposing the second lead frame and a second recess portion exposing the first lead frame,
wherein the second lead frame comprises a third stepped portion disposed along an edge of a lower surface thereof, and a mounting region of the protective device which is not overlapped in a vertical direction and spaced apart from the third stepped portion,
wherein a part of the second recess portion is overlapped with the third stepped portion in the vertical direction,
wherein a minimum distance between the first recess portion and the second recess portion is greater than a length of one side of the light emitting device, and
wherein the first recess portion is not overlapped with a second side of the light emitting device in the first direction.

US Pat. No. 10,461,232

CONDENSATION REACTION-TYPE DIE BONDING AGENT, LED LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME

CITIZEN WATCH CO., LTD., ...

1. A condensation reaction-type die bonding agent for bonding an LED device provided on its surface with device electrodes having connection surfaces covered by gold, said die bonding agent comprising:(A) a polysilsesquioxane solid in state at room temperature having trisiloxy units (TA) expressed by R1SiO3/2 where, R1 indicates one group selected from the group comprised of C1 to C15 alkyl groups, a phenyl group, and a benzyl group, and having hydroxyl groups;
(B) a polysilsesquioxane liquid in state at room temperature having 65 mol % to 100 mol % trisiloxy units (TB) expressed by R2SiO3/2 where, R2 indicates one group selected from the group comprised of C1 to C15 alkyl groups, a phenyl group, and a benzyl group, and having —OR2 where, R2 indicates one group selected from the group comprised of C1 to C15 alkyl groups, a phenyl group, and a benzyl group; and
(C) a condensation reaction catalyst.

US Pat. No. 10,461,229

PACKAGE FOR ULTRAVIOLET EMITTING DEVICES

RayVio Corporation, Hayw...

1. A device comprising:a light emitting diode comprising a semiconductor structure comprising an active layer disposed between an n-type region and a p-type region, wherein the active layer emits UV radiation;
a mount, wherein the light emitting diode is disposed on the mount, the mount comprising a support structure that surrounds the light emitting diode;
the support structure defining a cavity within which the light emitting diode is located, the support structure providing a first surface surrounding a top of the cavity;
a transparent optic disposed over the light emitting diode, the transparent optic comprising tabs extending from a top portion of the optic, where the tabs rest on the first surface of the support structure; and
the optic being a pre-formed solid structure that is positioned within the cavity such that the optic only takes up a portion of the cavity, wherein there is a gap between sidewalls of the cavity and the optic, the optic tapering inward as it approaches the light emitting diode within the cavity.

US Pat. No. 10,461,226

SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGES

SAMSUNG ELECTRONICS CO., ...

1. A semiconductor light emitting device package comprising:a substrate;
a semiconductor light emitting device on the substrate; and
an encapsulation layer which covers the semiconductor light emitting device,
wherein the encapsulation layer comprises:
a plurality of ring portions which are disposed sequentially from an edge toward a center of the substrate, in a plan view; and
a center portion which is surrounded by an innermost one of the plurality of ring portions,
wherein the semiconductor light emitting device package further comprises a dam structure which extends along an outer sidewall of an outermost one of the plurality of ring portions, and
wherein the dam structure is substantially transparent.

US Pat. No. 10,461,225

METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE INCLUDING SEALING MATERIALS WITH PHOSPHOR PARTICLES

TOYODA GOSEI CO., LTD., ...

1. A method of manufacturing a light-emitting device, the method comprising:providing a case comprising a recessed portion and mounting a light-emitting element on a bottom of the recessed portion;
putting a first sealing material comprising a first phosphor particle into the recessed portion;
putting a second sealing material comprising a second phosphor particle on the first sealing material in the recessed portion;
precipitating the second phosphor particle before curing the second sealing material; and
curing the first sealing material and the second sealing material after the precipitating of the second phosphor particle,
wherein the second phosphor particle is located above the first phosphor particle after the first and second sealing materials cure,
wherein the precipitating of the second phosphor particle is conducted so as to form a layer of the second phosphor particle at a bottom of the second sealing material before the curing of the first sealing material and the second sealing material, and
wherein the first phosphor particle and the second phosphor particle are different in a degree of precipitation.

US Pat. No. 10,461,223

SEMICONDUCTOR DEVICE

Epistar Corporation, Hsi...

1. A semiconductor device, comprising:a semiconductor stack comprising a surface; and
an electrode structure comprising an electrode pad formed on the surface, wherein the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad, and the first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode;
wherein, from a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively comprise a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

US Pat. No. 10,461,222

LIGHT-EMITTING ELEMENT COMPRISING SAPPHIRE SUBSTRATE WITH CONVEX PORTIONS

NICHIA CORPORATION, Anan...

1. A light-emitting element comprising:a sapphire substrate having a c-plane at a main surface thereof; and
a semiconductor layer located on a main surface side of the sapphire substrate,
wherein the sapphire substrate comprises:
a first convex portion located at the main surface and having two longitudinal sides along a first m-axis of the sapphire substrate,
a second convex portion located at the main surface and having two longitudinal sides along a second m-axis of the sapphire substrate, and
a third convex portion located at the main surface and having two longitudinal sides along a third m-axis of the sapphire substrate,
wherein the second m-axis is rotated counterclockwise by 120° from the first m-axis, and the third m-axis is rotated counterclockwise by 120° from the second m-axis,
wherein a first line extending through the third convex portion and parallel to the third m-axis passes through the first convex portion in a plan view;
wherein a second line extending parallel to the second m-axis and tangent to an end of the first convex portion at a second-convex-portion side does not pass through the third convex portion; and
wherein the first convex portion and the third convex portion are on opposite sides of the second line.

US Pat. No. 10,461,221

SEMICONDUCTOR DEVICE WITH IMPROVED LIGHT PROPAGATION

Sensor Electronic Technol...

1. A semiconductor structure comprising:a layer transparent to radiation having a target wavelength, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength, wherein an average thickness of each of the plurality of vacancies is approximately one tenth of an average distance between adjacent vacancies in the plurality of vacancies.

US Pat. No. 10,461,215

METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE

NICHIA CORPORATION, Anan...

1. A method of manufacturing a light-emitting device, the method comprising:directly bonding a plurality of light-emitting elements to a collective light-transmissive member having a plate shape, each light-emitting element comprising a plurality of electrodes;
subsequently, forming stud bumps on each electrode of each light-emitting element;
subsequently, dividing the collective light-transmissive member to obtain a plurality of light-transmissive members on each of which one or more of the light-emitting elements are bonded; and
subsequently, mounting the light-emitting elements on or above a mounting base by a flip-chip technique.

US Pat. No. 10,461,214

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

TOYODA GOSEI CO., LTD., ...

1. A method for producing a Group III nitride semiconductor light-emitting device, the method comprising:forming an oxide film containing Al atoms, N atoms, and O atoms by uniformly oxidizing an entire surface of at least one substrate of an AlN substrate and an AlGaN substrate;
forming a first Group III nitride layer on the oxide film;
forming a first conductive type first semiconductor layer on the first Group III nitride layer;
forming a light-emitting layer on the first semiconductor layer; and
forming a second conductive type second semiconductor layer on the light-emitting layer,
wherein, in the forming the first Group III nitride layer, the AlN layer or the AlGaN layer is formed as the first Group III nitride layer under a condition that a temperature of the substrate is 1200° C. to 1450° C.,
wherein, in the forming the oxide film, AlON or AlGaON is formed as the oxide film for inverting a polarity, and the polarity is inverted between the substrate and the first Group III nitride layer formed on the oxide film by the oxide film, and
wherein, in the forming the oxide film, octahedral crystals of O and Al are formed as the oxide film.

US Pat. No. 10,461,213

METHOD OF MANUFACTURING SOLAR CELL

LG ELECTRONICS INC., Seo...

1. A method of manufacturing a solar cell, the method comprising:forming a photoelectric converter including an amorphous semiconductor layer;
forming an electrode connected to the photoelectric converter; and
performing a post-treatment by providing light to the photoelectric converter and the electrode,
wherein, in the performing of the post-treatment, a plasma lighting system (PLS) is used as a light source, and a processing temperature is within a range from about 100° C. to about 300° C.,
wherein a cover substrate is located on a front surface of the light source, and
wherein the cover substrate includes a plurality of substrates having different indices of refraction.

US Pat. No. 10,461,212

METHOD FOR PROCESSING SILICON MATERIAL

NewSouth Innovations Pty ...

1. A method for manufacturing a photovoltaic device, the method comprising the steps of:providing a substrate that comprises a silicon p-n junction;
annealing the substrate at a temperature between 500° C. and 700° C. in the presence of a hydrogen source for a first predetermined period of time to allow hydrogen atoms to penetrate into silicon material of the silicon p-n junction; and
exposing the substrate to electromagnetic radiation while the substrate is kept at a temperature between 150° C. and 400° C. in a manner such that photons with an energy higher than that of a bandgap of the silicon material are provided at a radiation intensity of at least 20 mW/cm2 and an excess of minority carriers is created in the silicon material;
wherein, during the steps of annealing the substrate and exposing the substrate to electromagnetic radiation, electrically active defects in the silicon material are passivated.

US Pat. No. 10,461,211

PROCESS FOR PRODUCING AN ARRAY OF MESA-STRUCTURED PHOTODIODES

1. A process for producing an array of mesa-structured photodiodes, including at least the following steps:a) producing a layer, referred to as the useful layer, including an upper face and an opposite lower face, resting on a carrier layer via the lower face, including a stack of a first zone located at the upper face and having a first doping type, and of a second zone located between the first zone and the carrier layer having a second doping type, opposite the first type;
b) producing an etch mask positioned on said upper face, formed of a plurality of pads, referred to as etch pads which are distinct from one another;
c) wet-etching a part of the useful layer located between the etch pads, thus forming a plurality of mesa-structured photodiodes, each having an upper surface on which one of said etch pads rests, said wet etch being adapted so that the upper surface of each photodiode has a mean lateral dimension that is smaller than that of the corresponding etch pad, thus forming a recess between the etch pad and the corresponding photodiode;
d) conformally depositing, on the etch pads and the photodiodes, a passivation layer made of at least one dielectric or semiconductor material, with deposition conditions chosen so that the passivation layer has a local thickness that is less than or equal to 200 nm below the recess, and a columnar polycrystalline structure, the columns of which extend longitudinally along the thickness of the passivation layer with a constant transverse dimension, and are separated laterally from one another by grain boundaries;
e) removing the etch pads by chemical dissolution, thus leaving the upper surface exposed, a surface, referred to as the lateral surface of the photodiodes, which surrounds the upper surface, being covered by the passivation layer;
f) producing electrically conductive pads on and in contact with the upper surface.

US Pat. No. 10,461,208

SOLAR CELL AND METHOD FOR PRODUCING SAME

REC SOLAR PTE. LTD., Sin...

1. A method for fabricating a rear contacted heterojunction intrinsic thin layer solar cell wherein the rear side is formed by at least:providing a silicon substrate with a front surface and a rear surface;
depositing a continuous thin layer of intrinsic amorphous silicon over the entire rear surface of the silicon substrate, the intrinsic amorphous silicon layer having a front surface adjacent to the rear surface of the silicon substrate and the intrinsic amorphous silicon layer having a back surface opposite to the front surface of the intrinsic amorphous silicon layer;
depositing a separation layer comprising an electrically insulating material wherein the separation layer is deposited through a mask such that it covers separation portions of the back surface of the intrinsic amorphous silicon layer;
depositing an emitter layer comprising a doped semiconducting material of a first doping polarity wherein the emitter layer is deposited through a mask such that it covers an emitter portion of the back surface of the intrinsic amorphous silicon layer adjacent to the separation portions;
depositing a base layer comprising a doped semiconducting material of a second doping polarity opposite to the first doping polarity and with higher doping concentration than the silicon substrate wherein the base layer is deposited though a mask such that it covers a base portion of the back surface of the intrinsic amorphous silicon layer adjacent to the separation portions.

US Pat. No. 10,461,206

SOLAR PHOTOVOLTAIC-THERMAL SYSTEM

Changzhou Almaden Co., Lt...

1. A solar photovoltaic-thermal system comprising:a solar cell assembly comprising a transparent glass front cover, a transparent encapsulating material, a transparent glass back sheet and a photovoltaic component situated between the transparent glass front cover and the transparent glass back sheet and encapsulated by the transparent encapsulating material;
a plurality of light guides, located below the transparent glass back sheet of the solar cell assembly and each having a plane with a slant angle with respect to the transparent glass back sheet, an arc surface or a parabolic surface; and
a light reflecting plate disposed below the solar cell assembly and the light guides, wherein the light reflecting plate, two adjacent light guides and the transparent glass back sheet form a fully enclosed space and confine a light collection cavity;
a heat exchanger disposed in the light collection cavity; and
an outer frame;wherein the transparent glass back sheet is supported only by the outer frame and the light guides, andwherein the heat exchanger is not vertically shaded by the photovoltaic component, and the heat exchanger is heated by radiation heat and conduction heat from the light collection cavity.

US Pat. No. 10,461,204

DEFORMABLE PAPER ORIGAMI OPTOELECTRONIC DEVICES

KING ABDULLAH UNIVERSITY ...

1. A deformable optoelectronic device comprising:a paper substrate comprising a plurality of fold segments arranged in a deformable pattern;
first and second electrode layers attached to a surface of the substrate; and
plural semiconductor nanowire layers configured to detect light and act as photodetectors,
wherein the plural semiconductor nanowire layers are electrically connected, along parallel branches, between the first and second electrode layers, each branch including a subset of the plural semiconductor nanowire layers electrically connected in series, and
wherein the substrate is folded along plural fold lines to form a 3-dimensional structure.

US Pat. No. 10,461,203

SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE

Infineon Technologie AG, ...

1. A semiconductor device, comprising:a quantum well layer stack comprising a plurality of first quantum well layers and a plurality of second quantum well layers, wherein first quantum well layers of the plurality of first quantum well layers and second quantum well layers of the plurality of second quantum well layers are arranged alternatingly on a first semiconductor layer structure,
wherein the first quantum well layers of the plurality of first quantum well layers comprise silicon-germanium and the second quantum well layers of the plurality of second quantum well layers comprise silicon,
wherein the first quantum well layers of the plurality of first quantum well layers and the second quantum well layers of the plurality of second quantum well layers have a thickness of below 100 nm, and
wherein the quantum well layer stack is configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

US Pat. No. 10,461,202

IN-PLANE RESONANT-CAVITY INFRARED PHOTODETECTORS WITH FULLY-DEPLETED ABSORBERS

The Government of the Uni...

1. A hybrid waveguide comprising a III-V resonant-cavity infrared detector (RCID) photodiode ridge integrated with a waveguide,the waveguide comprising:
a first cladding layer disposed on a substrate;
a core layer disposed on the first cladding layer; and
a second cladding layer disposed on the core layer;
the core layer and second cladding layer being patterned to form air or dielectric regions on each lateral side of the hybrid waveguide, the air or dielectric regions being configured to laterally confine light propagating in the waveguide such that propagation is in a single lateral mode;
and the RCID ridge comprising:
a p+ bottom contact layer disposed on an upper surface of the second cladding layer;
a p-type region disposed on a first area of an upper surface of the bottom contact layer;
an absorber region having a thickness of less than 100 nm disposed on an upper surface of the p-type region;
an n-type region disposed on an upper surface of the absorber region; and
an n+ top contact layer disposed on an upper surface of the n-type region;
the hybrid waveguide further comprising a first distributed Bragg reflector (DBR) grating at a first end and a second DBR grating at a second end, the first and second DBR gratings forming a resonant cavity within the RCID photodiode extending along a length of the hybrid waveguide, the resonant cavity having a resonant wavelength ?R; and
wherein the RCID photodiode is configured to detect infrared light propagating within the hybrid waveguide, the resonant cavity formed by the first and second DBR gratings being configured to increase an effective absorption path of light having at the resonant wavelength ?R travelling through the hybrid waveguide.

US Pat. No. 10,461,200

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

United Microelectronics C...

1. A semiconductor structure, comprising:a substrate;
a light sensing device, disposed in the substrate; and
a light-guiding structure, located above the light sensing device, having a top surface and a bottom surface opposite to each other, wherein the bottom surface is closer to the substrate than the top surface and a position of a minimum width of the light-guiding structure is located between the top surface and the bottom surface.

US Pat. No. 10,461,197

SPUTTERING TARGET, OXIDE SEMICONDUCTOR, OXYNITRIDE SEMICONDUCTOR, AND TRANSISTOR

Semiconductor Energy Labo...

1. A semiconductor device comprising:an oxynitride semiconductor layer comprising:
a plurality of first regions; and
a second region,
wherein each region of the plurality of first regions comprises an element M,
wherein the element M is one or more of Al, Si, Y, B, Ti, Fe, Ni, Ge, Zr, Mo, La, Ce, Nd, Hf, Ta, W, Mg, V, Be, and Cu,
wherein each region of the plurality of first regions comprises an insulating material as a first main component,
wherein the second region comprises a conductive material as a second main component,
wherein the second region comprises indium,
wherein each region of the plurality of first regions is surrounded by the second region in plan view, and
wherein the plurality of first regions and the second region are arranged in a mosaic pattern.

US Pat. No. 10,461,194

THRESHOLD VOLTAGE CONTROL USING CHANNEL DIGITAL ETCH

International Business Ma...

1. A method for fine-tuning a threshold voltage of a nanosheet structure, the method comprising:forming a nanosheet stack including a plurality of sacrificial layers and a plurality of nanowires;
forming a sacrificial gate structure over the nanosheet stack;
partially etching one or more of the plurality of sacrificial layers to form cavities, the partial etching resulting in remaining sections of sacrificial layers;
removing the sacrificial gate structure;
removing at least one of the remaining sections of sacrificial layers to expose a surface of each of the plurality of nanowires;
forming an oxidation channel directly contacting the exposed surface of each of the plurality of nanowires on only either a top side or a bottom side of each of the plurality of nanowires; and
removing the oxidation channels to form a recess on each of the plurality of nanowires.

US Pat. No. 10,461,191

SEMICONDUCTOR DEVICE WITH UNDERCUTTED-GATE AND METHOD OF FABRICATING THE SAME

NANYA TECHNOLOGY CORPORAT...

1. A method of fabricating a semiconductor device, comprising following operations:(i) providing a semiconductor substrate having an active area, a shallow trench isolation (STI) structure surrounding the active area, and a doped region located in the active area;
(ii) etching the semiconductor substrate to form a first protrusion structure, a source semiconductor feature, a drain semiconductor feature, and an etched STI structure, wherein the etched STI structure comprises a first portion and a second portion, the second portion of the etched STI structure has a top surface that is higher than a top surface of the first protrusion structure, and the top surface of the first protrusion structure is higher than a top surface of the first portion of the etched STI structure;
(iii) etching the first protrusion structure to form a second protrusion structure, wherein the second protrusion structure has an undercut at a periphery of the active area;
(iv) conformally forming a dielectric layer over the second protrusion structure; and
(v) forming a gate structure crossing over the second protrusion structure, wherein the gate structure extends in a first direction, and the undercut extends in a second direction that is substantially perpendicular to the first direction.

US Pat. No. 10,461,190

METHOD FOR REDUCING CONTACT RESISTANCE IN SEMICONDUCTOR STRUCTURES

Taiwan Semiconductor Manu...

1. A method, comprising:forming a fin over a substrate;
forming, on the fin, a gate structure having a sidewall;
forming a sidewall spacer adjacent to the sidewall;
doping a source/drain (S/D) region adjacent to the sidewall spacer;
depositing a layer of doped amorphous material over the gate structure, the sidewall spacer, and the S/D region; and
crystallizing a portion of the layer of doped amorphous material to form a region of crystallized material that comprises a doping concentration higher than a doping concentration of the S/D region.

US Pat. No. 10,461,188

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

Semiconductor Manufacturi...

1. A method for manufacturing a semiconductor device, comprising:providing a substrate structure, wherein the substrate structure comprises:
a substrate having a first device region and a second device region,
a first dummy gate structure at the first device region,
a second dummy gate structure at the second device region, and
a Lightly Doped Drain (LDD) region below the first dummy gate structure,
wherein the first dummy gate structure comprises:
a first dummy gate dielectric layer at the first device region,
a first dummy gate on the first dummy gate dielectric layer, and
a first spacer layer at a side wall of the first dummy gate, and
wherein the second dummy gate structure comprises:
a second dummy gate dielectric layer at the second device region,
a second dummy gate on the second dummy gate dielectric layer, and
a second spacer layer at a side wall of the second dummy gate;
removing the first dummy gate;
etching back the first spacer layer to reduce a thickness of the first spacer layer such that the thickness of the first spacer layer is smaller than a thickness of the second spacer layer;
removing an exposed portion of the first dummy gate dielectric layer to form a first trench;
removing the second dummy gate after removing the first dummy gate;
removing an exposed portion of the second dummy gate dielectric layer to form a second trench;
depositing a gate dielectric layer to cover a bottom portion and a side wall of the first trench and a bottom portion and a side wall of the second trench; and
before depositing the gate dielectric layer, forming a gate oxide layer only at the bottom portion of the first trench.

US Pat. No. 10,461,186

METHODS OF FORMING VERTICAL FIELD EFFECT TRANSISTORS WITH SELF-ALIGNED CONTACTS AND THE RESULTING STRUCTURES

GLOBALFOUNDRIES INC., Gr...

1. A method comprising:forming a transistor, an isolation region, and an additional isolation region, wherein the transistor has a first end and a second end opposite the first end and comprises: a semiconductor fin that extends vertically between a lower source/drain region in a substrate and an upper source/drain region and horizontally from adjacent the first end of the transistor to adjacent the second end of the transistor; a spacer layer on the lower source/drain region around the semiconductor fin; a gate on the spacer layer around the semiconductor fin; and a source/drain sidewall spacer on the gate around the upper source/drain region and a cap layer on the upper source/drain region, wherein the isolation region extends from within the substrate through the spacer layer and is positioned laterally adjacent to the second end of the transistor, and wherein the additional isolation region is on the spacer layer and positioned laterally adjacent to the first end of the transistor;
forming a dielectric layer on the transistor, the isolation region and the additional isolation region; and
forming a gate contact that extends vertically through the dielectric layer and into the isolation region, the gate contact being positioned laterally immediately adjacent to the gate at the second end of the transistor and having a bottom above a level of the spacer layer.

US Pat. No. 10,461,185

ASSEMBLIES HAVING CONDUCTIVE STRUCTURES ALONG PILLARS OF SEMICONDUCTOR MATERIAL

Micron Technology, Inc., ...

1. An assembly, comprising:pillars of semiconductor material over a base, the pillars of semiconductor material being arranged in rows that extend along a first direction;
the rows further comprising an intervening spacing regions between the pillars of semiconductor material such that the intervening spacing regions alternate with the silicon pillars within each of the rows,
the pillars of semiconductor material having top surfaces at a first maximum height above the base, and the intervening spacing regions comprising spacing structures having top surfaces at a second maximum height above the base, the second maximum height being below the first maximum height;
the rows being spaced from each other by gap regions;
conductive structures within the gap regions between the rows, the conductive structures each extending along the first direction along a plurality of the pillars of semiconductive material, two of the conductive structures being within each of the gap regions and being spaced apart from one another by a separating region, the separating region having a bottom surface that undulates across semiconductor segments and insulative segments, a height of each of the semiconductor segments being higher than that of each of the insulative segments relative to the base;
channel regions within the pillars of semiconductor material;
gates within the conductive structures; and
transistors, with each of the transistors comprising one of the channel regions and at least one of the gates.

US Pat. No. 10,461,183

ULTRA HIGH VOLTAGE SEMICONDUCTOR DEVICE WITH ELECTROSTATIC DISCHARGE CAPABILITIES

Taiwan Semiconductor Manu...

1. A semiconductor device comprising:a first layer over a semiconductor substrate;
a drain region in the first layer, the drain region comprising
a drain rectangular portion;
a first drain end portion contiguous with the drain rectangular portion and extending from the drain rectangular portion away from a center of the drain region; and
a second drain end portion contiguous with the drain rectangular portion and extending from the drain rectangular portion away from the center of the drain region; and
a source region spaced a distance from and surrounding the drain region in the first layer,
wherein the first drain end portion and the second drain end portion have a same doping type and each of the first drain end portion and the second drain end portion have different doping concentrations from the drain rectangular portion.

US Pat. No. 10,461,182

DRAIN CENTERED LDMOS TRANSISTOR WITH INTEGRATED DUMMY PATTERNS

TEXAS INSTRUMENTS INCORPO...

1. A drain extended transistor, comprisinga plurality of substantially parallel transistor finger structures formed in an active region of a semiconductor substrate, the plurality of transistor finger structures including: a plurality of body region fingers; a plurality of source fingers; a plurality of oxide fingers, a plurality of drain fingers; a plurality of drift region fingers, and a plurality of gate fingers;
individual ones of the plurality of body region fingers including a body region that extends along a first direction into a semiconductor substrate, the body region including: majority carrier dopants of a first type; and a channel portion;
individual ones of the plurality of source fingers including a source region that extends along the first direction into the semiconductor substrate from a first side of the semiconductor substrate, the source region adjacent a first side of the channel portion of the body region, the source region including majority carrier dopants of a second type;
individual ones of the plurality of drain fingers including a drain region that extends along the first direction into the semiconductor substrate from the first side, the drain region including: majority carrier dopants of the second type, and a first end;
individual ones of the plurality of oxide fingers including an oxide structure that extends along the first side of the semiconductor substrate, the oxide structure including: a first end spaced along a second direction from the channel portion of the body region; and a second end adjacent the first end of the drain region, the second direction being orthogonal to the first direction;
individual ones of the plurality of drift region fingers including a drift region, the drift region including majority carrier dopants of the second type, the drift region extending along the first direction into the semiconductor substrate from the first side, the drift region extending along the second direction from the channel portion of the body region to the drain region; the drift region including a drift region portion separated from the first side along the first direction by at least a portion of the oxide structure; and
individual ones of the plurality of gate fingers including a gate structure, the gate structure including: a gate dielectric layer formed over the first side of the substrate; and a gate electrode on the gate dielectric layer at least partially above the channel portion of the body region;
wherein one of the drain fingers is positioned at a center of the drain extended transistor along the second direction.

US Pat. No. 10,461,178

METHOD FOR MANUFACTURING ARRAY SUBSTRATE, ARRAY SUBSTRATE AND DISPLAY PANEL

BOE TECHNOLOGY GROUP CO.,...

1. A method for manufacturing an array substrate, comprising steps of:forming patterns of a gate metal layer and a gate insulating layer successively on a base plate;
forming a pattern of a semiconductor layer, wherein the semiconductor layer comprises a first oxide layer and a second oxide layer stacked on the first oxide layer, the first oxide layer is an insulative oxide layer and the second oxide layer is a semiconductive oxide layer, and the first oxide layer is located between the gate insulating layer and the second oxide layer;
forming a pattern of a source and drain metal layer; and
the first oxide layer including a first active region and a first pixel electrode region, the second oxide layer including a second active region and a second pixel electrode region, subjecting the second pixel electrode region of the second oxide layer to plasma treatment, to convert the second pixel electrode region of the second oxide layer into a conductor to form a pixel electrode.

US Pat. No. 10,461,175

TFT-CONTAINING BACKPLATE AND METHOD FOR FABRICATING THE SAME

BOE TECHNOLOGY GROUP CO.,...

1. A method or fabricating a TFT-containing backplate, comprising: forming a top-gate TFT on a substrate, wherein the top-gate TFT comprises a gate insulating layer which comprises a negative silicone light shielding material,wherein forming the top-gate TFT on the substrate comprises:
depositing a first metal layer on the substrate, and patterning the first metal layer to form a source and a drain;
depositing a metal oxide layer on the substrate on which the source and the drain have been formed;
depositing a first insulating layer on the metal oxide layer, and patterning the first insulating layer by self-alignment exposure to form the gate insulating layer which has an inverted trapezoid cross-sectional shape; and
depositing a second metal layer to form a gate on the gate insulating layer.

US Pat. No. 10,461,173

METHODS, APPARATUS, AND MANUFACTURING SYSTEM FOR FORMING SOURCE AND DRAIN REGIONS IN A VERTICAL FIELD EFFECT TRANSISTOR

GLOBALFOUNDRIES INC., Gr...

1. A method, comprising:forming a fin above a semiconductor substrate;
forming a structure on a middle portion of each sidewall of the fin, whereby a lower portion of each sidewall of the fin adjacent the semiconductor substrate and at least a top of the fin are uncovered by the structure; and
forming a first epitaxial region on at least the top of the fin for forming a top source/drain (S/D) region, and a second epitaxial region on the lower portion of each sidewall and on the semiconductor substrate for forming a bottom S/D region, such that the bottom S/D region comprises an elevated subregion on the lower portion of each sidewall of each fin, wherein the elevated subregion is vertically aligned with the top S/D region.

US Pat. No. 10,461,170

METHOD OF FORMING MOSFET STRUCTURE

Taiwan Semiconductor Manu...

1. A method comprising:providing a semiconductor structure that includes an epitaxial layer and a cap layer above the epitaxial layer;
providing a gate layer adjacent to the epitaxial layer and the cap layer;
providing a dielectric layer above the cap layer and the gate layer;
forming a trench above the cap layer by patterning a portion of the dielectric layer above the cap layer, wherein sidewalls of the trench comprise the gate layer and the dielectric layer above the gate layer;
filling the trench with a protection layer; and
removing the protection layer.

US Pat. No. 10,461,169

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME

Taiwan Semiconductor Manu...

1. A method for forming a semiconductor device structure, comprising:forming a metal gate electrode structure and an insulating layer over a semiconductor substrate, wherein the insulating layer surrounds the metal gate electrode structure; and
nitrifying a first top portion of the metal gate electrode structure to transform the first top portion into a metal nitride layer while nitrifying a second top portion of the insulating layer to transform the second top portion of the insulating layer to a dielectric nitride layer.

US Pat. No. 10,461,168

SEMICONDUCTOR DEVICE FOR COMPENSATING INTERNAL DELAY, METHODS THEREOF, AND DATA PROCESSING SYSTEM HAVING THE SAME

Samsung Electronics Co., ...

1. A method of manufacturing a Fin Field Effect Transistor (FinFET), the method comprising:providing a substrate;
forming an elevated source and an elevated drain on the substrate;
forming a first dielectric layer on the substrate, the first dielectric layer including a gate oxide layer and a high-k dielectric layer disposed on the gate oxide layer, the high-k dielectric layer being U-shaped;
forming a metal buffer layer on the first dielectric layer, the metal buffer layer being U-shaped;
forming a metal gate on the metal buffer layer, the metal gate contacting the metal buffer layer; and
forming a second dielectric layer on the substrate after generating at least a first opening next to the first dielectric layer such that the second dielectric layer contacts the first dielectric layer, wherein
a dielectric constant of the second dielectric layer is less than that of the first dielectric layer, and
a first portion of the first dielectric layer is disposed between the metal buffer layer and the second dielectric layer, and blocks the metal buffer layer to contact the second dielectric layer.

US Pat. No. 10,461,166

ELECTRICAL CONTACT

National University of Si...

1. An electrical contact comprising:(a) a top electrode comprising a non-Newtonian liquid metal alloy; and
(b) a bottom electrode comprising a self-assembled monolayer of molecules (SAM) formed on a metal substrate,
wherein the surface of the SAM layer of the bottom electrode contacting the top electrode is a template-stripped non-patterned surface and the electrical contact has no edge effect;
and the surface of the liquid metal alloy contacting the SAM layer is contained in a polymer insulator and the area of the electrical contact between the liquid metal alloy surface and the SAM layer is determined by modulating the diameter of the liquid metal alloy surface contacting the SAM layer, the diameter being between 15 ?m and 55 ?m.

US Pat. No. 10,461,165

SEMICONDUCTOR DEVICE AND METHOD OF FORMATION

Taiwan Semiconductor Manu...

1. A method of forming a semiconductor device, comprising:forming a first tube material over a first channel material, the first channel material over a dielectric layer;
forming a second channel material over the first tube material such that the second channel material is in contact with the first channel material;
removing at least some of the dielectric layer from under the first channel material to form a first gate opening;
forming a gate in the first gate opening under the first channel material and around the second channel material; and
performing an annealing operation to form a dielectric tube from the first tube material and to form a channel from the first channel material and the second channel material, wherein the channel surrounds the dielectric tube to enclose an outer perimeter of the dielectric tube.

US Pat. No. 10,461,159

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

RENESAS ELECTRONICS CORPO...

1. A method of manufacturing a semiconductor device, the method comprising the steps of:(a) forming a second nitride semiconductor layer on a first nitride semiconductor layer;
(b) forming a third nitride semiconductor layer on the second nitride semiconductor layer;
(c) forming a fourth mesa-type nitride semiconductor layer on the third nitride semiconductor layer;
(d) forming a gate insulating film on the fourth mesa-type nitride semiconductor layer; and
(e) forming a gate electrode on the gate insulating film;
wherein the second nitride semiconductor layer has an electron affinity equal to or larger than electron affinity of the first nitride semiconductor layer,
wherein the third nitride semiconductor layer has an electron affinity smaller than the electron affinity of the first nitride semiconductor layer,
wherein the fourth nitride semiconductor layer has an electron affinity equal to or smaller than the electron affinity of the second nitride semiconductor layer, and
wherein the step (d) includes the steps of:
(d1) forming a first film including a first insulator on the fourth mesa-type nitride semiconductor layer by a sputtering process using a target including the first insulator; and
(d2) forming a second film including a second insulator on the first film by a CVD process.

US Pat. No. 10,461,158

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Renesas Electronics Corpo...

1. A method of manufacturing a semiconductor device including a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and a semiconductor layer formed on the first insulating film, comprising the steps of:(a) forming a dummy gate electrode of a MISFET over the semiconductor layer;
(b) after the step (a), forming an offset spacer over a side surface of the dummy gate electrode;
(c) after the step (b), forming a side wall over the side surface of the dummy gate electrode via the offset spacer;
(d) after the step (c), forming an interlayer insulating film so as to cover the dummy gate electrode, the offset spacer and the side wall;
(e) after the step (d), exposing an upper surface of the dummy gate electrode and an upper surface of the offset spacer by polishing the interlayer insulating film;
(f) after the step (e), removing the offset spacer in order to form a first opening beside the dummy gate electrode;
(g) after the step (f), forming a first impurity region having a first conductivity type in the semiconductor substrate by an ion implantation method through the first opening;
(h) after the step (g), forming a second impurity region having a second conductivity type opposite to the first conductivity type in the semiconductor layer by an ion implantation method through the first opening; and
(i) after the step (h), replacing the dummy gate electrode with a metal material, thereby to form a metal gate electrode of the MISFET.

US Pat. No. 10,461,157

FLAT GATE COMMUTATED THYRISTOR

ABB Schweiz AG, Baden (C...

1. A turn-off power semiconductor device comprising:a semiconductor wafer having a first main side and a second main side opposite to the first main side;
a plurality of thyristor cells, each of the plurality of thyristor cells comprising in the order from the first main side to the second main side:
(a) a cathode region of a first conductivity type;
(b) a base layer of a second conductivity type different from the first conductivity type, wherein the cathode region is formed as a well in the base layer to form a first p-n junction between the base layer and the cathode region;
(c) a drift layer of the first conductivity type forming a second p-n junction with the base layer; and
(d) an anode layer of the second conductivity type separated from the base layer by the drift layer,
wherein each thyristor cell comprises: a gate electrode which is arranged lateral to the cathode region and forms an ohmic contact with the base layer; a cathode electrode arranged on the first main side and forming an ohmic contact with the cathode region; and an anode electrode arranged on the second main side and forming an ohmic contact with the anode layer,
wherein interfaces between the cathode regions and the cathode electrodes and interfaces between the base layers and the gate electrodes of the plurality of thyristor cells are flat and coplanar, and
wherein the base layer includes a gate well region extending from its contact with the gate electrode to a depth (dW) which is at least half of a depth (dC) of the cathode region,
wherein, for any depth, the minimum doping concentration of the gate well region at this depth is 50% above a doping concentration of the base layer between the cathode region and the gate well region at this depth and at a lateral position, which has in an orthogonal projection onto a plane parallel to the first main side a distance of 2 ?m from the cathode region, and
the base layer includes a compensated region of the second conductivity type, the compensated region being arranged directly adjacent to the first main side and between the cathode region and the gate well region, wherein a ratio between the density of first conductivity type impurities and the net doping concentration in the compensated region is at least 0.4.

US Pat. No. 10,461,155

EPITAXIAL REGION FOR EMBEDDED SOURCE/DRAIN REGION HAVING UNIFORM THICKNESS

GLOBALFOUNDRIES INC., Gr...

9. A method of forming a source/drain region comprising:forming a first spacer material layer on a P-type field effect transistor (PFET) region of a substrate and an N-type field effect transistor (NFET) region of the substrate, the NFET region including a gate structure positioned on the substrate;
forming a mask above the first spacer material layer in the PFET region;
forming an opening in the first spacer material layer and the substrate adjacent to the gate structure in the NFET region;
removing the mask;
forming a first epitaxial region in at least a portion of the opening;
forming a second spacer material layer on the first spacer material layer and on a portion of an uppermost surface of the first epitaxial region adjacent to the gate structure;
removing a first portion of the first epitaxial region using the second spacer material layer as a mask, wherein after removing the first portion a remaining portion of the first epitaxial region includes a substantially uniform sidewall thickness; and
forming a second epitaxial region abutting the remaining portion of the first epitaxial region in the opening to form the source/drain region.

US Pat. No. 10,461,148

MULTILAYER BURIED METAL-INSULTOR-METAL CAPACITOR STRUCTURES

International Business Ma...

1. A method comprising:providing an insulator layer overlying a semiconductor substrate;
forming a plurality of alternating first conductive layers and second conductive layers on the insulator layer;
forming at least one dielectric layer between each of the alternating first conductive layers and second conductive layers;
forming a first trench at a first location through a first portion of the plurality of the alternating first conductive layers and second conductive layers and the at least one dielectric layer; and
etching the first trench selective to the plurality of alternating first conductive layers and second conductive layers, wherein the first conductive layers are etched faster than the second conductive layers to form a first modified trench, wherein the first conductive layers are recessed relative to the center of the first trench greater than the second conductive layers, wherein each of the plurality of the recessed first conductive layers and the second recessed second conductive layers are in continuous contact with the at least one dielectric layer between each of the alternating recessed first conductive layers and the second recessed second conductive layers.

US Pat. No. 10,461,145

METHOD FOR FABRICATING MAGNETIC CORE

TAIWAN SEMICONDUCTOR MANU...

1. A method for fabricating a magnetic core, comprising:depositing a magnetic layer on a dielectric layer;
forming a first photoresist layer on the magnetic layer and patterning the first photoresist layer;
etching the magnetic layer through the patterned first photoresist layer, wherein a first section of the magnetic layer exposed by the patterned first photoresist layer remains on the dielectric layer after etching the magnetic layer;
removing the patterned first photoresist layer;
forming a second photoresist layer on the magnetic layer and patterning the second photoresist layer such that the patterned second photoresist layer has a curve portion;
etching the magnetic layer through the patterned second photoresist layer such that the curve portion of the patterned second photoresist layer suspends without support above the magnetic layer; and
removing the patterned second photoresist layer.

US Pat. No. 10,461,143

TRANSISTOR SUBSTRATE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE TRANSISTOR SUBSTRATE

SAMSUNG DISPLAY CO., LTD....

1. A display device comprising:a pixel electrode;
a common electrode overlapping the pixel electrode;
a light emitting layer positioned between the pixel electrode and the common electrode;
a base substrate;
a data line disposed on the base substrate;
a conductive layer disposed on the base substrate and being spaced from the data line;
a semiconductor layer overlapping the conductive layer, being spaced from the conductive layer, and comprising a source electrode and a drain electrode, wherein the source electrode is electrically connected to the data line, and wherein the drain electrode is electrically connected to the pixel electrode; and
a gate electrode overlapping the semiconductor layer,
wherein the base substrate is a single layer structure or a multilayer structure having a polymer.

US Pat. No. 10,461,138

ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

BOE Technology Group Co.,...

1. An organic light-emitting display device, comprising:a substrate;
a plurality of pixel definition strips disposed on the substrate, wherein the plurality of pixel definition strips are spaced apart from and arranged in parallel with each other, and two adjacent pixel definition strips among the plurality of pixel definition strips and a portion of the substrate between the two adjacent pixel definition strips constitute a pixel definition groove; and
an organic light-emitting functional layer disposed in the pixel definition groove, wherein the organic light-emitting functional layer comprises a plurality of sub organic light-emitting functional layers which are insulated with each other and arranged along an extension direction of the plurality of pixel definition strips.

US Pat. No. 10,461,137

ORGANIC ELECTROLUMINESCENT DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME

BOE Technology Group Co.,...

1. An organic electroluminescent display panel, comprising a substrate, and a pixel defining layer and a light emitting layer on the substrate, wherein:the pixel defining layer comprises a first pixel defining layer on the substrate, a second pixel defining layer on the first pixel defining layer, and a third pixel defining layer between the first pixel defining layer and the second pixel defining layer;
the first pixel defining layer comprises a plurality of first opening areas, each of which defines a sub-pixel light emitting area, and the light emitting layer is arranged in the plurality of first opening areas;
the second pixel defining layer comprises a plurality of second opening areas, each of which defines a virtual pixel area comprising at least two adjacent sub-pixel light emitting areas in a same color; and
the third pixel defining layer comprises a plurality of third opening areas corresponding to the plurality of first opening areas in a one-to-one manner, and each of the plurality of third opening areas is not larger than a corresponding first opening area;
wherein respective virtual pixel areas defined by the plurality of second opening areas comprise a same number of sub-pixel light emitting areas; and virtual pixel areas containing red sub-pixel light emitting areas, virtual pixel areas containing green sub-pixel light emitting areas, and virtual pixel areas containing blue sub-pixel light emitting areas are disposed alternately in each row of the respective virtual pixel areas; and
wherein sidewalls of respective first opening areas, respective second opening areas, and respective third opening areas are sloped, top areas of the respective first opening areas and the respective third opening areas are smaller than their corresponding bottom areas, and top areas of the respective second opening areas are greater than their corresponding bottom areas.

US Pat. No. 10,461,135

FLEXIBLE DISPLAY PANEL AND FABRICATION METHOD THEREOF, AND FLEXIBLE DISPLAY DEVICE

Shanghai Tianma Micro-Ele...

11. A flexible display device including a flexible display panel, wherein the flexible display panel comprises:a stacked structure having a plurality of layers comprising a flexible substrate, a light-emitting device layer, and a polarizing layer stacked in a preset order;
at least one upper-side resistive force-sensitive electrode disposed on a layer above a neutral plane of the stacked structure; and
at least one lower-side resistive force-sensitive electrode disposed on a layer below the neutral plane, wherein:
each upper-side resistive force-sensitive electrode includes a first resistive force-sensitive electrode and a second resistive force-sensitive electrode,
each lower-side resistive force-sensitive electrode includes a third resistive force-sensitive electrode and a fourth resistive force-sensitive electrode,
the first resistive force-sensitive electrode, the second resistive force-sensitive electrode, the third resistive force-sensitive electrode, and the fourth resistive force-sensitive electrode are electrically connected to form a bridge circuit,
the bridge circuit further includes a positive terminal, a negative terminal, a first voltage terminal, and a second voltage terminal,
one end of the first resistive force-sensitive electrode being electrically connected to one end of the third resistive force-sensitive electrode,
one end of the second resistive force-sensitive electrode being electrically connected to one end of the fourth resistive force-sensitive electrode,
another end of the first resistive force-sensitive electrode being electrically connected to another end of the fourth resistive force-sensitive electrode,
another end of the third resistive force-sensitive electrode being electrically connected to another end of the second resistive force-sensitive electrode,
a connection node between the first resistive force-sensitive electrode and the third resistive force-sensitive electrode is connected to one of the positive terminal and the negative terminal,
a connection node between the second resistive force-sensitive electrode and the fourth resistive force-sensitive electrode is connected to the other one of the positive terminal and the negative terminal,
a connection node between the first resistive force-sensitive electrode and the fourth resistive force-sensitive electrode is connected to the first voltage terminal, and
a connection node between the third resistive force-sensitive electrode and the second resistive force-sensitive electrode is connected to the second voltage terminal.

US Pat. No. 10,461,133

LIGHT EMITTING DISPLAY DEVICE INCLUDING AN INFRARED RAY LIGHT EMITTING DIODE

Samsung Display Co., Ltd....

1. A light emitting display device comprising:a first electrode on a substrate;
a second electrode overlapping the first electrode;
a red emission layer, a green emission layer, a blue emission layer, and an infrared ray emission layer between the first electrode and the second electrode and emitting light of different wavelengths from each other;
a green resonance auxiliary layer between the green emission layer and the first electrode; and
a blocking layer between the green resonance auxiliary layer and the green emission layer,
wherein the infrared ray emission layer and the green resonance auxiliary layer comprise the same material,
the green emission layer comprises a green light emitting dopant, and
a Lowest Unoccupied Molecular Orbital (LUMO) energy of the blocking layer is larger than a LUMO energy of the green light emitting dopant.

US Pat. No. 10,461,131

QUANTUM DOT LED AND OLED INTEGRATION FOR HIGH EFFICIENCY DISPLAYS

Apple Inc., Cupertino, C...

1. A display comprising:a tandem hybrid pixel including an organic light emitting diode (OLED) subpixel and a quantum dot light emitting diode (QD-LED) subpixel;
a common hole transport layer in the OLED subpixel and the QD-LED subpixel;
a common quantum dot layer over the common hole transport layer in the QD-LED subpixel and in the OLED subpixel;
a semi-common charge generation layer over the common quantum dot layer in the OLED subpixel;
a first cathode over the common quantum dot layer in the QD-LED subpixel;
a semi-common hole transport layer over the semi-common charge generation layer in the OLED subpixel;
an organic emission layer over the semi-common hole transport layer in the OLED subpixel;
a semi-common electron transport layer over the organic emission layer in the OLED subpixel; and
a semi-common second cathode over the semi-common electron transport layer in the OLED subpixel.

US Pat. No. 10,461,130

IMAGE DEVICE INCLUDING PHOTOELECTRIC CONVERSION LAYER

PANASONIC INTELLECTUAL PR...

1. An imaging device comprising unit pixels, each unit pixel including:a photoelectric conversion unit including
a first electrode including a first conducting material,
a second electrode facing the first electrode,
a photoelectric conversion layer between the first and second electrodes, the photoelectric conversion layer including a first photoelectric conversion material, and
an electron-blocking layer between the first electrode and the photoelectric conversion layer, the electron-blocking layer including an electron-blocking material; and
a signal detection circuit electrically connected to the first electrode, wherein
the electron-blocking material has an ionization potential higher than both a work function of the first conducting material and an ionization potential of the first photoelectric conversion material,
the photoelectric conversion unit is adapted to be applied with a voltage between the first electrode and the second electrode, and the photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer, and
a difference between the first voltage and the second voltage is 0.5 V or more.

US Pat. No. 10,461,129

DEVICE FOR DETECTING ELECTROMAGNETIC RADIATION CONSISTING OF ORGANIC MATERIALS

ISORG, Grenoble (FR)

1. An electromagnetic radiation detection device comprising: at least one row of photoresistors, each photoresistor comprising an active portion comprising organic semiconductor materials; emitters of the electromagnetic radiation; and a waveguide; wherein the waveguide comprises at least one surface intended to be in contact with at least one object, the photoresistors being distributed along an edge of said surface, the emitters being located along said edge.

US Pat. No. 10,461,123

LIGHT EMITTING DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A light emitting device, comprising:a substrate;
a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction;
one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element;
a first reflection electrode adjacent the first end portion of the light emitting element;
a second reflection electrode adjacent the second end portion of the light emitting element;
a first contact electrode directly connected to the first reflection electrode and the first end portion of the light emitting element;
an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and
a second contact electrode on the insulating layer, the second contact electrode being connected to the second reflection electrode and the second end portion of the light emitting element through the opening.

US Pat. No. 10,461,120

DISPLAY DEVICE AND METHOD FOR PRODUCING A DISPLAY DEVICE

OSRAM Opto Semiconductors...

1. A pixel headlight comprising:a carrier; and
a semiconductor layer sequence having a major face facing the carrier, the semiconductor layer sequence comprising a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer, the active region adapted to generate radiation and form a plurality of pixels;
wherein the semiconductor layer sequence comprises a recess that extends from the major face of the semiconductor layer sequence through the active region into the first semiconductor layer and is provided for electrical contacting of the first semiconductor layer; and
wherein the carrier comprises a plurality of switches that are integrated into the carrier, each switch provided for controlling at least one pixel.

US Pat. No. 10,461,118

METHOD FOR MAKING CMOS IMAGE SENSOR INCLUDING PHOTODIODES WITH OVERLYING SUPERLATTICES TO REDUCE CROSSTALK

ATOMERA INCORPORATED, Lo...

15. A method for making a CMOS image sensor comprising:forming a plurality of laterally adjacent photodiodes on a semiconductor substrate by
forming a retrograde well extending downward into the substrate from a surface thereof and having a second conductivity type,
forming a first well around a periphery of the retrograde well also having the second conductivity type,
forming a second well within the retrograde well having the first conductivity type, and
forming first and second superlattices respectively overlying each of the first and second wells, each of the first and second superlattices comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base semiconductor portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions.

US Pat. No. 10,461,108

IMAGING DEVICE

Hitachi, Ltd., Tokyo (JP...

1. An imaging device comprising:a modulator with a first pantoscopic grating pattern, the modulator configured to modulate light intensity by passage through the first pantoscopic grating pattern;
an image sensor configured to convert light passing through the modulator, to image data, and output the image data; and
an image processor configured to conduct image processing of restoring an image with the use of the image data output from the image sensor,
wherein the first pantoscopic grating pattern is configured to comprise multiple basic patterns, and
each of the basic patterns has the shape of a concentric circle, and
wherein the modulator comprises a first polarization plate and a second polarization plate,
the first polarization plate is disposed closer to a surface configured to serve as an input face of the modulator,
the second polarization plate is disposed closer to a rear surface configured to serve as an output face of the modulator, and
the first polarization plate and the second polarization plate have polarizing axes determined on the basis of an arrangement of the basic patterns.

US Pat. No. 10,461,107

IMAGE PICKUP ELEMENT, IMAGE PICKUP DEVICE, MANUFACTURING DEVICE AND METHOD

Sony Corporation, Tokyo ...

1. An image pickup element comprising:a non-planar layer between a microlens and a filter, the filter and the microlens touch the non-planar layer,
wherein a refractive index of the microlens is greater than a refractive index of the non-planar layer, the refractive index of the non-planar layer is greater than a refractive index of the filter.

US Pat. No. 10,461,101

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Semiconductor Energy Labo...

1. A semiconductor device comprising:an oxide semiconductor layer over a first insulating film;
the oxide semiconductor layer comprising a first region and a second region;
a transistor over an insulating surface, the transistor including:
a source electrode layer and a drain electrode layer;
a second insulating film over the first region; and
a gate electrode layer over the first region with the second insulating film therebetween;
a transparent conductive film overlapping with the second region;
a dielectric between the second region and the transparent conductive film; and
a capacitor comprising
the second region;
the transparent conductive film; and
the dielectric serving as a dielectric of the capacitor,
wherein the dielectric is in direct contact with a side edge surface of the second insulating film, a first electrode of the capacitor, and a second electrode of the capacitor.

US Pat. No. 10,461,096

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Samsung Display Co., Ltd....

1. A display apparatus comprising:a substrate having a central area and a peripheral area disposed adjacent to the central area, the central area comprising a display area;
at least one semiconductive layer or one conductive layer in the display area;
a first insulating layer disposed in the peripheral area of the substrate, the first insulating layer covering at least one of the at least one semiconductive layer or the one conductive layer;
at least one pattern corresponding to a region of the first insulating layer;
a cover layer on the first insulating layer and covering the at least one pattern in the peripheral area, the cover layer comprising an insulating material; and
an encapsulating layer on the display area, at least one layer of the encapsulating layer is spaced apart from the cover layer.

US Pat. No. 10,461,095

FERROELECTRIC NON-VOLATILE MEMORY

SanDisk Technologies LLC,...

1. A non-volatile storage element comprising:a control gate;
a blocking layer comprising a ferroelectric material;
a charge storage region; and
a tunneling layer,
wherein the blocking layer is disposed between the control gate and the charge storage region, and the charge storage region is disposed between the tunneling layer and the blocking layer, and
wherein the blocking layer comprises doped hafnium oxide including crystal grains that may be switched between a first polarization state to a second polarization state.

US Pat. No. 10,461,094

3D MEMORY DEVICE

Trinandable S.r.l., Mila...

8. A three-dimensional, 3D, memory device comprising:a plurality of rows of strings of memory cells, each row of strings of memory cells comprising an alignment of strings of memory cells extending along a first direction, said rows following one another along a second direction, wherein each string of memory cells comprises a stack of memory cells, said strings of memory cells of the stack extending along a third direction from a first end to a second end;
a source region at the second end of the strings of memory cells;
wherein rows of strings of memory cells consecutive along said second direction are spaced apart from each other of a pitch and arranged in “zigzag” along said second direction;
wherein between pairs of said rows of strings of memory cells consecutive along said second direction a slit is formed which extend in said third direction from said first end to said source region; and
wherein said slit has size, along said second direction, less than, equal to or greater than said pitch, sufficient for the formation, in said slit, of an electrical contact to the source region.

US Pat. No. 10,461,093

SEMICONDUCTOR MEMORY DEVICE

TOSHIBA MEMORY CORPORATIO...

1. A semiconductor memory device comprising:a plurality of conducting layers and a plurality of insulating layers that are alternately disposed above a semiconductor substrate;
a plurality of pillars that extend through the alternately-disposed layers of the conductive layers and the insulating layers in a first direction which crosses a surface of the semiconductor substrate, the plurality of pillars being arranged in a second direction along the surface of the semiconductor substrate; and
a plate that extends through the alternately-disposed layers of the conductive layers and the insulating layers in the first direction, extends in the second direction, and is disposed apart from the plurality of pillars in a third direction along the surface of the semiconductor substrate, the third direction being different from the second direction,
wherein the plate has convex portions and non-convex portions alternately arranged on a side of the plate in the second direction, the convex portions and the non-convex portions both extend through the alternately-disposed layers of the conductive layers and the insulating layers in the first direction, and the convex portions and at least part of the plurality of pillars are arranged in a staggered manner.

US Pat. No. 10,461,092

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

Toshiba Memory Corporatio...

1. A semiconductor memory device, comprising:a stacked body including:
a first stacked unit and a second stacked unit stacked above the first stacked unit, each of the first and second stacked units including a plurality of electrode layers alternately stacked with a plurality of first insulating layers therebetween, and
an intermediate insulating layer provided above the first stacked unit and below the second stacked unit; and
a columnar member piercing the stacked body in a stacking direction of the stacked body, the columnar member including an intermediate columnar part inside the intermediate insulating layer; wherein
a diameter of the intermediate columnar part in a first direction perpendicular to the stacking direction is broadened downwardly to a predetermined depth in a diameter broadening portion of the columnar member, a sidewall of the diameter broadening portion of the columnar member having a curved shape in a cross section along the stacking direction, the diameter of the intermediate columnar part being broadened downwardly on both sides of the diameter broadening portion in the first direction, and wherein
the predetermined depth does not reach any electrode layers functioning as word lines in the first stacked unit, memory cells being provided at intersections of the word lines and the columnar member.

US Pat. No. 10,461,090

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

TOSHIBA MEMORY CORPORATIO...

1. A semiconductor memory device, comprising:a substrate;
a plurality of first conductive films stacked in a first direction above the substrate and extend in a second direction intersecting the first direction and in a third direction intersecting the first direction and the second direction;
a memory columnar body extending in the first direction and having a side surface covered by the plurality of first conductive films; and
a first structure extending in the second direction and dividing the plurality of first conductive films in the third direction, a length of the first structure in the second direction being greater than a length of the first structure in the third direction, and the length of the first structure in the second direction being equal to or greater than a length of the plurality of first conductive films in the second direction,
each of the memory columnar body and the first structure comprising:
a memory insulating film provided on a side surface of at least one of the plurality of first conductive films; and
a first semiconductor layer provided on a side surface of the memory insulating film.

US Pat. No. 10,461,088

METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE

Taiwan Semiconductor Manu...

1. A method for forming a semiconductor device structure, comprising:forming a gate stack and a conductive layer over a semiconductor substrate, wherein the semiconductor substrate has a first region and a second region isolated from each other by an isolation structure in the semiconductor substrate, the gate stack is formed over the first region, and the conductive layer is formed over the second region and the isolation structure;
forming a negative photoresist layer to cover the gate stack and a first portion of the conductive layer over the isolation structure and expose a second portion of the conductive layer;
forming a mask layer over the negative photoresist layer and the conductive layer, wherein the mask layer has trenches over the second portion of the conductive layer, wherein the mask layer over the conductive layer is thicker than the mask layer over the negative photoresist layer;
removing the second portion through the trenches;
removing the mask layer; and
removing the negative photoresist layer.

US Pat. No. 10,461,084

COMPACT SEMICONDUCTOR MEMORY DEVICE HAVING REDUCED NUMBER OF CONTACTS, METHODS OF OPERATING AND METHODS OF MAKING

Zeno Semiconductor, Inc.,...

1. An integrated circuit comprising:a link or string of semiconductor memory cells, wherein each said semiconductor memory cell comprises:
a floating body region for storing charge indicating a state of said semiconductor memory cell; and
a back-bias region;
wherein applying a voltage to said back-bias region results in at least two stable floating body charge levels;
wherein said link or string comprises at least one contact configured to electrically connect said semiconductor memory cells to at least one control line;
wherein a number of said at least one contact is the same as or less than a number of said semiconductor memory cells in said link or string; and
a control circuitry configured to apply said voltage to said back-bias region.

US Pat. No. 10,461,080

METHOD FOR MANUFACTURING A FINFET DEVICE

TAIWAN SEMICONDUCTOR MANU...

1. A method for manufacturing a semiconductor device, the method comprising:etching a semiconductor substrate of a wafer to form at least one fin;
forming an insulation structure around the fin;
recessing the fin;
epitaxially growing an epitaxial channel structure over the recessed fin;
removing a portion of the epitaxial channel structure over a top surface of the insulation structure;
performing a non-contact-type cleaning operation to clean a top surface of the wafer after removing said portion of the epitaxial channel structure;
cleaning the top surface of the wafer using hydrogen fluoride after removing said portion of the epitaxial channel structure; and
recessing the insulation structure such that the epitaxial channel structure protrudes from the recessed insulation structure.