US Pat. No. 10,340,573

LAUNCHER WITH CYLINDRICAL COUPLING DEVICE AND METHODS FOR USE THEREWITH

2. A launching device comprising:a transmitter configured to generate a radio frequency signal on a transmission medium, wherein the transmitter is included in a launching circuit with the transmission medium, the launching circuit having an electrical return path; and
a cylindrical coupler that launches the radio frequency signal from an aperture of the cylindrical coupler as a guided electromagnetic wave that is bound to an outer surface of the transmission medium, wherein the cylindrical coupler has an elliptical cross section, and wherein the guided electromagnetic wave propagates along the outer surface of the transmission medium without requiring the electrical return path.

US Pat. No. 10,340,572

ANTENNA MODULE AND ELECTRONIC DEVICE

MURATA MANUFACTURING CO.,...

1. An antenna module comprising:a resin multilayer substrate including a plurality of base materials that are flexible;
wherein the resin multilayer substrate includes a rigid portion and a flexible portion;
a first number of stacked layers of the base materials at the rigid portion is larger than a second number of stacked layers of the base materials at the flexible portion;
a radiating element including a conductor pattern is provided at the rigid portion;
a transmission line including a conductor pattern and electrically connected to the radiating element is provided at the flexible portion; and
the rigid portion bends.

US Pat. No. 10,340,571

ROPE CONDUCTOR FOR GUIDED WAVE RADAR COAXIAL WAVEGUIDE

Honeywell International I...

1. A coaxial guided wave radar apparatus, comprising:a central conductor comprising a bottom portion, a wire rope and a wire rope stop associated with the wire rope;
a plurality of spacers positioned and held in place about said central conductor at predetermined lengths along said central conductor, wherein each space among said plurality of spacers is positioned and held in place along said central conductor by at least one retainer that is crimped to said central conductor;
a tensioner attached to an end of said wire rope of said central conductor, wherein said tensioner allows for a proper tension to be applied to maintain a spacing of said wire rope from an outer conductor;
a pre-loading mechanism arranged to handle thermo-mechanical breathing resulting from varying thermal expansion coefficients associated with the different materials of said coaxial guided wave radar apparatus; and
an insulating load ring surrounding the wire rope stop and the bottom portion of the central conductor, wherein the wire rope stop provides a reaction force through the insulating load ring to the tensioner.

US Pat. No. 10,340,570

MICROELECTRONIC RF SUBSTRATE WITH AN INTEGRAL ISOLATOR/CIRCULATOR

NORTHROP GRUMMAN SYSTEMS ...

10. An electronic assembly comprising:a planar semiconductor substrate;
the planar semiconductor substrate having a front side with semiconductor components and a back side that includes at least one recess extending inwardly towards the front side;
a circulator formed as part of the planar semiconductor substrate and having at least one magnetic ferrite disk mounted in the at least one recess, the circulator capable of operating at frequencies between 75-100 GHz;
the circulator having an transmit port, an output port, and a receive port, the transmit port disposed to receive a radio frequency transmit signal to be coupled with low insertion loss to the output port, the output port disposed to receive a receive radio frequency signal to be coupled with low insertion loss to the receive port, the circulator providing high insertion loss at the receive port to the radio frequency transmit signal; and
the planar semiconductor substrate having at least one of the width and length dimensions that is not more than ½ wavelength of the radio frequency signal which is substantially 1.6 mm.

US Pat. No. 10,340,569

MULTIPLEXER AND LOW PASS FILTER FOR MULTIPLEXER

1. A multiplexer through which different frequency bands pass comprising:a housing that includes an I/O terminal and a channel group which inputs and/or outputs frequencies of different ranges, includes a plurality of connectors, and is separated from the I/O terminal;
a low-pass filter provided inside the housing, electrically connected to the I/O terminal, and formed of a distributed constant type;
a common capacitor provided in parallel to the low-pass filter and electrically connected to a contact point between the I/O terminal and the low-pass filter; and
a cavity filter which includes a plurality of cavities which are formed in the housing and a resonator which is respectively installed in the cavities,
wherein a part of the cavity filter is electrically connected between the low-pass filter and a part of the channel group, and
wherein the other part of the cavity filter is electrically connected between the common capacitor and the other part of the channel group.

US Pat. No. 10,340,568

VOLTAGE CONTROLLED TUNABLE FILTER

NORTHROP GRUMMAN SYSTEMS ...

1. A waveguide filter comprising:a first conductive layer;
a second conductive layer;
a dielectric substrate layer disposed between the first and second conductive layers to form a waveguide between an input and an output;
a plurality of conductive vias that interconnect the top conductive layer and the bottom conductive layer through the dielectric substrate layer, wherein the plurality of conductive vias are arranged between the input and the output to form an outline of the waveguide filter that defines a frequency characteristic of the waveguide filter; and
at least one tunable via comprising a tunable material disposed within the dielectric substrate layer and configured to change a relative permittivity of the dielectric substrate layer based on an applied voltage.

US Pat. No. 10,340,566

BATTERY MODULE

Samsung SDI Co., Ltd., Y...

1. A battery module comprising:a plurality of battery cells aligned along a first direction, each of the battery cells comprising a battery case, an electrode assembly accommodated in the battery case, a cap assembly on the battery case, and a gas exhaust vent configured to rupture in response to a first pressure in the battery case, the battery case being configured to bulge in response to a second pressure in the battery case, the second pressure being lower than the first pressure;
a cooling gas inlet for supplying cooling gas to the battery cells, the cooling gas inlet being defined by a first side wall and a second side wall, the first side wall being configured to deform in response to a bulged battery case; and
a cooling gas valve in the cooling gas inlet, the cooling gas valve being configured to change from an open position into a closed position due to the deformation of the first side wall.

US Pat. No. 10,340,565

BATTERY CELL ASSEMBLY WITH IMPROVED COOLING EFFICIENCY

LG CHEM, LTD., Seoul (KR...

9. A battery cell assembly, comprising:a cooling fin having a tube through which a coolant flows;
at least one frame member;
at least one battery cell disposed to face the cooling fin;
a first cooling port welded to an inlet formed at one end of the tube of the cooling fin; and
a second cooling port welded to an outlet formed at the other end of the tube of the cooling fin,
wherein the first cooling port and the second cooling port are made of the same material as the tube,
wherein each of the first cooling port and the second cooling port includes a head portion having a first diameter and a body portion having a second diameter, and the first diameter is greater than the second diameter,
wherein the cooling fin has a first through hole defined by a sidewall in which the body portion of the first cooling port is accommodated therein and a second through hole defined by a sidewall in which the body portion of the second cooling port is accommodated therein,
wherein a portion of the inlet extends from the sidewall of the first through hole and a portion of the outlet extends from the sidewall of the second through hole, and
wherein the portion of the inlet is inserted into a hole formed in the first body portion and welded thereto, and the portion of the outlet is inserted into a hole formed in the second body portion and welded thereto.

US Pat. No. 10,340,564

VEHICULAR STORAGE BATTERY DEVICE

KABUSHIKI KAISHA TOSHIBA,...

1. A vehicular storage battery device configured to be mounted on a vehicle, the vehicular storage battery device comprising:a plurality of housings;
battery boxes disposed in each of the housings, each of the battery boxes housing an electric cell as a vehicle power source and including a heat transporting part to transport heat generated in the battery box to outside of the battery box;
a common cooling passage disposed in each of the housings, wherein in each of the housings (i) the common cooling passage is provided with an inlet for taking in a fluid and an outlet for discharging the fluid having passed through the passage, (ii) each of the inlet and the outlet are configured to be open in a direction different from a traveling direction of the vehicle, and (iii) the heat transporting part of each of the battery boxes is exposed to inside of the passage; and
an exterior case that includes supporting sections that support the housings;
wherein the exterior case includes:
an upper part fixing portion for fixing the exterior case to a rooftop part of the vehicle;
a lower part fixing portion for fixing the exterior case to an underfloor part of the vehicle;
a planned upper-side opening portion to discharge the fluid toward above the vehicle when the exterior case is fixed the vehicle by the upper part fixing portion; and
a planned lower-side opening portion to discharge the fluid toward below the vehicle when the exterior case is fixed to the vehicle by the lower part fixing portion.

US Pat. No. 10,340,563

TRACTION BATTERY COOLING SYSTEM WITH COOLANT PROPORTIONAL VALVE

Ford Global Technologies,...

1. A cooling system for an electrified motor vehicle, comprising:a coolant circuit circulating coolant between a traction battery and either a battery radiator or a chiller;
a refrigerant circuit circulating refrigerant between a compressor, a condenser and either a first evaporator or said chiller;
a plurality of flow control valves in said coolant circuit and said refrigerant circuit; and
a control system including a controller configured to (a) control operation of said plurality of flow control valves and (b) prioritize cabin cooling over traction battery cooling when the traction battery is at a normal operating temperature;
wherein, said coolant circuit further includes a coolant bypass and said plurality of flow control valves includes a coolant proportional valve in said coolant circuit between said traction battery and said chiller controlling flow of said coolant through said chiller.

US Pat. No. 10,340,562

BATTERY PACK AND HEATER ASSEMBLY

TOYOTA JIDOSHA KABUSHIKI ...

1. A battery pack comprising:a battery module including a plurality of cylindrical batteries, the battery module comprising:
a thermal diffusing plate housing and holding the plurality of cylindrical batteries;
a first chamber configured to distribute cooling air to cool each of the plurality of cylindrical batteries; and
a second chamber formed by walls, the walls including a first part and a second part, at least the first part of the walls including the thermal diffusing plate; and
a heater configured such that convection occurs in the second chamber,
wherein the second chamber is between the plurality of cylindrical batteries and the heater, and negative electrodes of the plurality of the cylindrical batteries partially define the first part of the walls that form the second chamber.

US Pat. No. 10,340,560

METHOD FOR MANAGING BATTERY OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE PERFORMING THE SAME

Samsung Electronics Co., ...

1. A method comprising:identifying, at an electronic device, a first power usage used by a first operation and a second power usage used by a second operation, the first operation and the second operation performed at the electronic device over a specified period of time;
detecting a remaining power of a battery operatively coupled with the electronic device;
determining an available time period for which the battery is capable to supply power to the electronic device, based on the first power usage, the second power usage, and the remaining power of the battery;
presenting, via a display operatively coupled with the electronic device, a first graphical user interface indicative of the determined available time period and a second graphical user
interface indicative of the remaining power of the battery;
identifying a charging history including at least one of a position where the battery was charged or a time when the battery was charged;
determining a charging probability of the electronic device, based at least in part on the charging history; and
applying the charging probability to display the first graphical user interface or the second graphical user interface if the charging probability of the electronic device is less than a specified value.

US Pat. No. 10,340,559

SECONDARY BATTERY PACK

SK INNOVATION CO., LTD., ...

1. A secondary battery pack, comprising:a secondary battery module including battery cells and cooling fins;
a first structure formed under the secondary battery module;
a second structure which is formed in a shape mounted on side faces of the secondary battery module and includes a printed circuit board; and
a cover mounted over the second structure,
wherein the first structure further includes a plate and a side structure,
wherein the side structure is provided over first and second sides of the plate,
wherein the plate includes a cooling channel, and
wherein each structure includes a coupling bracket.

US Pat. No. 10,340,558

BATTERY CELL WITH MONITORING DEVICE, AND CORRESPONDING OPERATING METHOD

AUDI AG, Ingolstadt (DE)...

1. A battery cell with a monitoring device, comprising:a data processing unit for processing state data of the battery cell as a function of a trigger pulse,
a triggering unit, which is connected to the data processing unit, for generating the trigger pulse, and provision of the trigger pulse to the data processing unit,
wherein the triggering unit is designed to evaluate a measurement signal, which comes from the battery cell and correlates with an electrical energy of the battery cell, and to generate the trigger pulse as a function of the measurement signal,
wherein the triggering unit is designed to generate the trigger pulse at a first point in time, at which the battery cell has a first electrical energy content and to generate the trigger pulse at a second point in time, at which the battery cell has a second electrical energy content, wherein the first electrical energy content and the second electrical energy content differ by a pre-definable energy value, and
wherein the measurement signal is proportional to an electric current through the battery cell or proportional to an electrical power of the battery cell, wherein the triggering unit has means to generate an integration signal as a function of the measurement signal and when the integration signal falls below or exceeds a pre-definable threshold value, is designed to generate the trigger pulse and to reset the integration signal to a start value.

US Pat. No. 10,340,557

BATTERY FOR A MOTOR VEHICLE AND MOTOR VEHICLE

AUDI AG, Ingolstadt (DE)...

1. A battery for a motor vehicle having at least one master control device and a plurality of battery cells, wherein, for each respective battery cell in the plurality of battery cells, the battery cell comprises:a battery cell housing, in which a galvanic element is accommodated,
two electrical connection terminals, by way of which the battery cell is electrically connected to at least one other battery cell in the plurality of battery cells, and
a battery cell control device, which is coupled to at least one communications device of the battery cell,
wherein the at least one communications device of the battery cell is configured to communicate with at least one battery cell in the plurality of battery cells that is adjacent to the battery cell in a first mode and with the at least one master control device of the battery in a second mode, which differs from the first mode.

US Pat. No. 10,340,556

BATTERY CELL, BATTERY MODULE, DETECTION SYSTEM, AND DETERMINATION SYSTEM

PANASONIC INTELLECTUAL PR...

1. A detection system comprising a battery module and a detection unit,wherein the battery module comprises a first battery cell and a second battery cell,
wherein the first battery cell comprises:
a first resistance change member having a first terminal and a second terminal;
a first power generation element including a first positive electrode, a first negative electrode, and a first electrolyte interposed between the first positive electrode and the first negative electrode;
a first case enclosing the first power generation element and the first resistance change member;
a first positive electrode terminal having an end electrically connected to the first positive electrode and an end exposed to outside of the first case; and
a first negative electrode terminal having an end electrically connected to the first negative electrode and an end exposed to the outside of the first case,
wherein at least one of the first positive electrode, the first negative electrode, and the first electrolyte contains a first sulfur-based material,
the first resistance change member contains a first resistance change material of which electrical resistance is changed by a chemical reaction with hydrogen sulfide,
the first terminal of the first resistance change member and the second terminal of the first resistance change member are exposed to the outside of the first case, and
the first resistance change member is not electrically connected to any of the first positive electrode terminal and the first negative electrode terminal,
wherein the second battery cell comprises:
a second resistance change member having a first terminal and a second terminal;
a second power generation element including a second positive electrode, a second negative electrode, and a second electrolyte interposed between the second positive electrode and the second negative electrode;
a second case enclosing the second power generation element and the second resistance change member;
a second positive electrode terminal having an end electrically connected to the second positive electrode and an end exposed to outside of the second case; and
a second negative electrode terminal having an end electrically connected to the second negative electrode and an end exposed to the outside of the second case,
wherein at least one of the second positive electrode, the second negative electrode, and the second electrolyte contains a second sulfur-based material,
the second resistance change member contains a second resistance change material of which electrical resistance is changed by a chemical reaction with hydrogen sulfide,
the first terminal of the second resistance change member and the second terminal of the second resistance change member are exposed to the outside of the second case,
the second resistance change member is not electrically connected to any of the second positive electrode terminal and the second negative electrode terminal, and
one of the first positive electrode terminal and the first negative electrode terminal is electrically connected to one of the second positive electrode terminal and the second negative electrode terminal,
wherein the detection unit performs an operation of applying a current between the first terminal of the first resistance change member and the second terminal of the first resistance change member, and detecting, as a first detection value, a voltage between the first terminal of the first resistance change member and the second terminal of the first resistance change member, or an operation of applying a voltage between the first terminal of the first resistance change member and the second terminal of the first resistance change member, and detecting, as the first detection value, a current between the first terminal of the first resistance change member and the second terminal of the first resistance change member,
wherein the detection unit performs an operation of applying a current between the first terminal of the second resistance change member and the second terminal of the second resistance change member, and detecting, as a second detection value, a voltage between the first terminal of the second resistance change member and the second terminal of the second resistance change member, or an operation of applying a voltage between the first terminal of the second resistance change member and the second terminal of the second resistance change member, and detecting, as the second detection value, a current between the first terminal of the second resistance change member and the second terminal of the second resistance change member,
wherein the detection system further comprises a connection state setting unit that sets a connection state between the detection unit and each of the first battery cell and the second battery cell,
wherein the connection state setting unit sets the connection state to a first connection state in which the detection unit is connected to the first battery cell and the detection unit is not connected to the second battery cell,
wherein, in the first connection state, the detection unit performs the operation of applying a current between the first terminal of the first resistance change member and the second terminal of the first resistance change member, and detecting, as the first detection value, a voltage between the first terminal of the first resistance change member and the second terminal of the first resistance change member, or the operation of applying a voltage between the first terminal of the first resistance change member and the second terminal of the first resistance change member, and detecting, as the first detection value, a current between the first terminal of the first resistance change member and the second terminal of the first resistance change member,
wherein the connection state setting unit further sets the connection state to a second connection state in which the detection unit is not connected to the first battery cell and the detection unit is connected to the second battery cell, and
wherein, in the second connection state, the detection unit performs the operation of applying a current between the first terminal of the second resistance change member and the second terminal of the second resistance change member, and detecting, as the second detection value, a voltage between the first terminal of the second resistance change member and the second terminal of the second resistance change member, or the operation of applying a voltage between the first terminal of the second resistance change member and the second terminal of the second resistance change member, and detecting, as the second detection value, a current between the first terminal of the second resistance change member and the second terminal of the second resistance change member.

US Pat. No. 10,340,555

METHOD FOR THE PRODUCTION OF THIN-FILM LITHIUM-ION MICROBATTERIES AND RESULTING MICROBATTERIES

1. A process for fabrication of an all-solid-state thin film micro-battery, the process comprising:depositing, by electrophoresis as one of a cathode film or an anode film, a first electrode film without any binders on one of a conducting substrate or a substrate with at least one conducting zone, said substrate or said at least one conducting zone serving as a collector of current from said first electrode film;
depositing an electrolyte film by electrophoresis from a suspension containing nanoparticles of electrolyte materials on said first electrode film, the electrolyte film; and
depositing, by one of electrophoresis or a vacuum deposition process as one of a cathode film or an anode film, a second electrode film on the electrolyte film to form the all-solid-state thin film micro-battery; and
consolidating the films deposited by electrophoresis to increase the density thereof of the films deposited by electrophoresis,
wherein:
the first electrode film is deposited from a suspension containing nanoparticles of one of cathode materials in a cathode materials suspension or anode materials in an anode materials suspension,
the second electrode film is deposited from a suspension containing nanoparticles of one of cathode materials in a cathode materials suspension or anode materials in an anode materials suspension,
an average size of nanoparticles in at least one of the cathode material in the cathode materials suspension, the electrolyte material in the electrolyte materials suspension, and the anode material in the anode materials suspension is less than 100 nm,
said films deposited by electrophoresis have a porosity of less than 5%.

US Pat. No. 10,340,552

ELECTROLYTE COMPOSITION AND METAL-ION BATTERY EMPLOYING THE SAME

INDUSTRIAL TECHNOLOGY RES...

1. An electrolyte composition, comprising:a metal halide;
an organic compound, wherein the organic compound is a nitrogen-containing compound, a sulfur-containing compound, or a combination thereof; and
a halogen-containing salt, wherein the halogen-containing salt has a structure represented by Formula (I)
[Ca+]i[X?]j   Formula (I),
wherein C is IA element, IIA element, IIIA element, IVA element, VA element, VIA element, transition metal, pyrrolium, pyrrolinium, pyrrolidinium, pyridinium, ammonium, imidazolium, indazolium, pyrimidinium, azaannulenium, azathiazolium, benzimidazolium, benzofuranium, benzotriazolium, borolium, cholinium, cinnolinium, diazabicyclodecenium, diazabicyclononenium, diazabicyclo-undecenium, dithiazolium, furanium, guanidinium, indolinium, indolium, morpholinium, oxaborolium, oxaphospholium, oxazinium, oxazolium, iso-oxazolium, oxathiazolium, pentazolium, phospholium, phosphonium, phthalazinium, piperazinium, piperidinium, pyranium, pyrazinium, pyrazolium, pyridazinium, quinazolinium, quinolinium, iso-quinolinium, quinoxalinium, selenozolium, sulfonium, tetrazolium, iso-thiadiazolium, thiazinium, thiazolium, thiophenium, thiuronium, triazadecenium, triazinium, triazolium, iso-triazolium, or uronium; X is fluorine, chlorine, bromine, or iodine; a=j/i, i is 1, 2, 3, or 4, and j is 1, 2, 3, 4, 5, or 6, and wherein the molar ratio of the metal halide to the organic compound is greater than 2, and the molar ratio of the metal halide to the halogen-containing salt is greater than 2; and wherein the metal halide is distinct from the halogen-containing salt.

US Pat. No. 10,340,551

ELECTROLYTE FOR NONAQUEOUS SECONDARY BATTERY AND NONAQUEOUS SECONDARY BATTERY USING THE SAME

National Institute of Adv...

1. A nonaqueous secondary battery electrolyte comprising a salt containing a charge carrier comprising a molecular ion, wherein the salt containing a molecular ion is a salt comprising:a molecular cation represented by Formula (1):
wherein Y is an atom of Group 15 or 16 of the periodic table; each R1 is, independently, an alkyl group, an alkoxy group, or a halogen atom; two R1 may be bonded to form a ring together with adjacent Y; and m is 3 or 4; anda triflate anion (CF3SO3?), a perchlorate ion, or a molecular anion represented by Formula (2):
wherein Z is an atom of Group 15 of the periodic table; each R2 is, independently, an alkyl group, an alkoxy group, a halogen atom, or a group represented by —SO2Rf, wherein Rf is a fluorine atom or a fluoroalkyl group; and n is an integer of 2 to 6.

US Pat. No. 10,340,550

LITHIUM ION SECONDARY CELL

NEC ENERGY DEVICES, LTD.,...

1. A lithium ion secondary cell comprising a positive electrode active material layer containing lithium manganese-based oxide as a positive electrode active material, a negative electrode active material layer containing a negative electrode active material, and an electrolytic solution used to immerse the positive electrode active material layer and the negative electrode active material layer,wherein the positive electrode active material layer comprises carbon nanotubes and the electrolytic solution comprises sulfonic acid ester in amount of not less than 0.1% by mass and not more than 6.0% by mass with respect to the total mass of the solvent and the sulfonic acid ester,
wherein a surface of the positive electrode active material layer is covered in a ratio not less than 40% and not more than 90% of a surface area with the carbon nanotubes having a mean D/G ratio, measured by Raman spectroscopy, of not less than 0.3 and not more than 0.6, the outermost cylinder of carbon nanotubes has a diameter of not less than 0.5 nm and not more than 50 nm,
wherein solid electrolyte interface films cover the surface of the positive electrode active material, and
wherein the solid electrolyte films are obtained during an initial charge of the cell by decomposition of the sulfonic acid ester through a catalytic function of the carbon nanotubes.

US Pat. No. 10,340,549

ELECTROLYTE AND BATTERY, AND ELECTRONIC DEVICE AND VEHICLE

SEIKO EPSON CORPORATION, ...

1. An electrolyte represented by the following formula (1):(Li7?3x+yGax)(La3?yCay)Zr2O12  (1)wherein 0.1?x?1, and 0.01?y?0.5.

US Pat. No. 10,340,548

METHOD FOR THE PRODUCTION OF THIN FILMS OF SOLID ELECTROLYTE FOR LITHIUM-ION BATTERIES

1. A process for fabrication of a solid electrolyte film for a battery, the process comprising:providing a conducting substrate film coated with one of an anode film or a cathode film;
depositing via electrophoretic deposition, from a suspension containing nanoparticles of electrolyte materials, on at least one of said conducting substrate film and said anode film or cathode film, a solid electrolyte film that does not contain any binder, at a thickness of less than 5 ?m, the nanoparticles having an average particle size of less than 100 nm;
drying the deposited solid electrolyte film; and
consolidating the solid electrolyte film via at least one of mechanical compression and heat treatment at a temperature that does not exceed a predetermined threshold of a melting temperature (expressed in ° C.) of one of the electrolyte materials having a lowest melting temperature from among the electrolyte materials, wherein the porosity of the solid electrolyte film is less than 10%.

US Pat. No. 10,340,547

FABRICATION METHOD OF BATTERY

DELTA ELECTRONICS, INC., ...

1. A fabrication method of a battery, comprising steps of:providing an electrode group, a first sealing film and a second sealing film;
bonding a part of a first surface of the first sealing film and a part of a first surface of the second sealing film by thermocompression to form a sealed chamber, wherein the first surface of the first sealing film is disposed toward the first surface of the second sealing film, each of the first sealing film and the second sealing film has a redundant part located outside the sealed chamber and without being bonded by thermo-compression, and a part of the electrode group is disposed in the sealed chamber;
injecting an electrolyte into the sealed chamber;
folding the redundant part of the first sealing film with an angle of 180 degrees;
folding the redundant part of the second sealing film with an angle of 180 degrees;
providing a fixing member;
aligning the first surface of the folded redundant part of the first sealing film and the first surface of the folded redundant part of the second sealing film to face different sides;
covering the folded redundant parts of the first sealing film and the second sealing film by the fixing member to fix the sealed chamber; and
bonding the folded redundant part of the first sealing film, the folded redundant part of the second sealing film and the fixing member by thermo-compression.

US Pat. No. 10,340,543

SYSTEMS AND METHODS FOR SUPPRESSING CHROMIUM POISONING IN FUEL CELLS

Bloom Energy Corporation,...

1. A fuel cell stack, comprising:solid oxide fuel cells that comprise:
an electrolyte;
a cathode electrode having an outer surface and an opposing an inner surface disposed on a first side of the electrolyte;
an anode electrode disposed on a second side of the electrolyte; and
a chromium-getter material arranged in separate strips that are each disposed directly on the outer surface of the cathode electrode, such that portions of the outer surface are exposed between the strips; and
interconnects comprising interconnect ribs that at least partially define gas flow passages, the interconnects being disposed between the fuel cells, such that the chromium-getter material is disposed directly between the outer surface of each cathode electrode and a corresponding interconnect, wherein the ribs contact portions of the cathode electrode exposed by gaps between the strips of the chromium-getter material.

US Pat. No. 10,340,542

FUEL CELL SYSTEM AND CONTROL METHOD OF FUEL CELL

Toyota Jidosha Kabushiki ...

1. A fuel cell system, comprising:a fuel cell comprising a stack structure configured by stacking a plurality of cells, the fuel cell including an end-portion cell in an end portion of the stack structure in a stacking direction;
a cell monitor configured to measure voltage of each of the cells as a cell voltage;
a temperature sensor configured to measure temperature of a cooling medium used to cool down the fuel cell; and
a controller configured to provide an output electric current limit of the fuel cell, wherein:
in response to a decrease of the cell voltage, the controller is configured to determine a first output limit amount for the output electric current limit according to the temperature of the cooling medium measured by the temperature sensor, and
when the cell voltage obtained from the end-portion cell of the fuel cell is equal to or lower than a first threshold value, the controller is configured to set the output electric current limit in accordance with a second output limit amount that is smaller than the first output limit amount.

US Pat. No. 10,340,541

OPERATION CONTROL METHOD AND SYSTEM OF FUEL CELL

Hyundai Motor Company, S...

1. An operation control method of a fuel cell having improved reverse voltage durability, in which an oxygen evolution catalyst is added to an anode electrode, the operation control method comprising:monitoring, by a controller, a cell voltage of the fuel cell during normal operation of the fuel cell;
comparing, by the controller, the monitored cell voltage of the fuel cell with a first setting voltage;
when the cell voltage is less than the first setting voltage as the cell voltage drops, performing, by the controller, a fuel cell operation control process for increasing the humidity in a cell of the fuel cell;
comparing, by the controller, the cell voltage of the fuel cell with a second setting voltage set as a threshold voltage for current limitation during the performance of the fuel cell operation control process for increasing the humidity in the cell of the fuel cell; and
when the cell voltage is less than the second setting voltage as the cell voltage decreases, performing, by the controller, current limitation for limiting the output current of the fuel cell,
wherein the first setting voltage is set as a threshold voltage at which generation of a reverse voltage is possible,
wherein the fuel cell operation control process for increasing the humidity in the cell includes a fuel cell operation control process for decreasing the temperature of the cell, and a fuel cell operation control process for increasing only a relative humidity of air supplied to a cathode of the fuel cell, and
wherein when the cell voltage is less than the first setting voltage as the cell voltage decreases, the fuel cell operation control process for decreasing the temperature of the cell is performed first, and, in response to determining that the cell voltage is continuously decreased, the fuel cell operation control process for increasing the relative humidity of the supplied air is performed.

US Pat. No. 10,340,540

FUEL CELL SYSTEM AND METHOD THEREOF

NISSAN MOTOR CO., LTD., ...

1. A fuel cell system having a fuel cell supplied with an anode gas and a cathode gas to generate electricity from the fuel cell depending on a load, comprising:a supply valve for supplying the anode gas into an anode system of the fuel cell system;
a purge valve for discharging an off-gas from the anode system;
a pressure detecting portion that estimates or measures a pressure inside the anode system; and
a hydrogen concentration estimating portion that estimates the hydrogen concentration inside the anode system based on a pressure decrease during a purge valve open duration when a predetermined time elapses after the purge valve is opened in a supply valve close state.

US Pat. No. 10,340,539

POWER CONDITIONING SYSTEM AND CONTROL METHOD THEREFOR

NISSAN MOTOR CO., LTD., ...

1. A power conditioning system, comprising:a fuel cell connected to a load;
a fuel cell converter connected between the fuel cell and the load, the fuel cell converter converting an output voltage of the fuel cell at a predetermined required voltage ratio;
a battery connected to the load in parallel to the fuel cell, the battery serving as a power supply source different from the fuel cell;
a battery converter connected between the battery and the load, the battery converter converting an output voltage of the battery at a predetermined required voltage ratio;
a current bypass path configured to couple the fuel cell and the load while bypassing the fuel cell converter; and
a controller programmed to:
apply an alternating-current voltage signal to an output side of the fuel cell converter; and
estimate an internal state of the fuel cell on the basis of a predetermined physical quantity when the alternating-current voltage signal was applied by the controller.

US Pat. No. 10,340,538

PERFORMANCE TESTING APPARATUS OF FUEL CELL

Hyundai Motor Company, S...

1. A performance testing apparatus of a fuel cell, comprising:a moving body configured to stack at least one unit cell and installed to be movable along a predetermined transporting path on a frame;
a pressurizing unit mounted to the frame, configured to press the unit cell on the moving body moved from a beginning stage side of the transporting path, and supply a reaction fluid to the unit cell; and
a terminal connection part mounted to the pressurizing unit side the frame and that connects a terminal to output a voltage of the unit cell to the unit cell,
wherein the pressurizing unit includes a press body mounted to a press frame on the frame to be movable in vertical direction and configured to press the unit cell stacked on the moving body.

US Pat. No. 10,340,537

FUEL CELL SYSTEM AND CONTROL METHOD FOR THE SAME

PANASONIC INTELLECTUAL PR...

1. A fuel cell system comprising:a reformer that generates a hydrogen-containing gas by using a raw material;
a raw-material supplier that supplies the raw material to the reformer;
a desulfurizer that desulfurizes, by using hydrodesulfurization, a sulfur compound contained in the raw material supplied to the reformer;
a recycle gas passage for supplying the desulfurizer with part of gas exhausted from the reformer;
a flow controller that controls flow of the gas in the recycle gas passage;
a vapor supplier that supplies vapor to the reformer;
a fuel cell that causes a reaction of the hydrogen-containing gas generated by the reformer;
a combustor that ignites and combusts off-gas exhausted from the fuel cell; and
a controller,
wherein after causing the raw-material supplier to supply the raw material at a startup of the fuel cell system, the controller is configured to perform control such that:
(i) before the vapor supplier starts supplying vapor to the reformer, the raw material exhausted as the off-gas via the fuel cell is combusted in the combustor, and the flow controller subsequently causes the part of the gas exhausted from the reformer to start flowing through the recycle gas passage, and
after the part of the gas exhausted from the reformer starts flowing through the recycle gas passage, the vapor supplier starts supplying the vapor to the reformer, or
(ii) before the vapor supplier starts supplying vapor to the reformer, the flow controller causes the part of the gas exhausted from the reformer to start flowing through the recycle gas passage, and the raw material exhausted as the off-gas via the fuel cell is subsequently combusted in the combustor, and
after the off-gas is combusted in the combustor, the vapor supplier starts supplying the vapor to the reformer.

US Pat. No. 10,340,535

FUEL CELL SYSTEM

HONDA MOTOR CO., LTD., T...

1. A fuel cell system comprising:a fuel cell that generates electricity through an electrochemical reaction between a fuel gas and an oxidant gas;
an oxidant gas supply piping that supplies the oxidant gas to the fuel cell;
an oxidant gas discharge piping that discharges the oxidant gas from the fuel cell;
an air compressor disposed on the oxidant gas supply piping;
a turbine disposed on the oxidant gas discharge piping and provided on the same shaft as the air compressor;
a pressure regulating valve disposed on the oxidant gas discharge piping between the fuel cell and the turbine;
a check valve that is provided between the turbine and the pressure regulating valve and that communicates with outside air so as to introduce an external air to the turbine; and
an air filter disposed at an outside air side of the check valve,
wherein a housing that constitutes the turbine has an air suction port of the turbine which is provided integrally with the housing or provided separately from the housing, and
wherein a wall of the air suction port is provided with the check valve that provides communication between an inside and an outside of the air suction port and the air filter is attached to the wall so as to cover the check valve.

US Pat. No. 10,340,533

FUEL CELL STACK

NISSAN MOTOR CO., LTD., ...

1. A fuel cell stack comprising a fuel cell module including fuel cells stacked on one another, each fuel cell including a membrane electrode assembly having a power generation portion and two separators interposing the membrane electrode assembly,each fuel cell including a gas introduction hole from which power generation gas is introduced, a gas discharge hole from which the power generation gas is discharged, a coolant introduction hole from which a coolant is introduced, and a coolant discharge hole from which the coolant is discharged,
the two separators in each fuel cell interposing the power generation portion and being provided therebetween with a gas passage communicating with the gas introduction hole and the gas discharge hole,
each fuel cell including a gas seal portion for preventing the power generation gas from flowing out of the gas introduction hole, the gas discharge hole, and the gas passage, and a coolant seal portion for preventing the coolant from flowing into a space between the separators and the membrane electrode assembly,
the fuel cells adjacent to each other in the fuel cell module being provided therebetween with a coolant passage which communicates with the coolant introduction hole and the coolant discharge hole and has a power generation portion cooling portion for cooling the power generation portion,
the gas seal portion including a gas seal projection which projects from at least one of the two separators toward the membrane electrode assembly in each fuel cell and said gas seal portion is provided with a recess serving as the coolant passage on a side opposite to the membrane electrode assembly,
the coolant seal portion including a coolant seal projection which projects from the at least one of the two separators toward the membrane electrode assembly in each fuel cell and said coolant seal portion is provided with a recess serving as the coolant passage on the side opposite to the membrane electrode assembly,
at least one of the gas seal projection and the coolant seal projection being provided with a resistance portion configured to suppress a flow of the coolant out of the power generation portion cooling portion.

US Pat. No. 10,340,532

SEPARATOR FOR FUEL CELL, FUEL CELL AND METHOD OF MANUFACTURING FUEL CELL

TOYOTA JIDOSHA KABUSHIKI ...

1. A separator for a fuel cell, comprising:a corrugated portion formed to have a corrugated cross section where a first groove that is concave to a first surface to form a flow path for a first fluid on the first surface and a second groove that is concave to a second surface opposite to the first surface to form a flow path for a second fluid on the second surface are arranged alternately and repeatedly, wherein
each of the second grooves has at least one shallower groove section formed to have less depth from the second surface than a depth of a remaining groove section and provided to form a communication flow channel on the first surface side, which is arranged to communicate between two flow path spaces for the first fluid that are adjacent to each other across the shallower groove section,
the shallower groove section included in each of the second grooves is formed at a position aligned with the shallower groove section included in another adjacent second groove, and
the shallower groove section is formed to have a cross section with a smaller curvature radius or a smaller draft angle on a downstream side of flow of the first fluid in the communication flow channel than a curvature radius or a draft angle on an upstream side.

US Pat. No. 10,340,530

ALKALINE DRY CELL

PANASONIC INTELLECTUAL PR...

1. An alkaline dry cell comprising:a bottomed cylindrical cell case;
a positive electrode packed in the cell case, and is made of a stack of n pieces of hollow cylindrical pellets;
a negative electrode disposed in a hollow portion of the pellets;
a separator interposed between the positive electrode and the negative electrode; and
an alkaline electrolytic solution,
wherein a thickness of a body portion of the cell case is 0.08 to 0.16 mm,
the positive electrode includes manganese dioxide and a conductive agent,
n is an integer of 3 or more,
an average density dm of manganese dioxide of the n pieces of the pellets is 2.80 to 3.00 g/cm3, and
a density dc of manganese dioxide of at least one pellet positioned in a middle portion in a height direction of the stack is 2.75 g/cm3 or less.

US Pat. No. 10,340,529

FUEL CELL

NGK INSULATORS, LTD., Na...

1. A fuel cell comprising an anode, a cathode supplied with an oxidant gas, a solid electrolyte layer disposed between the anode and the cathode, and a current collecting member disposed on the cathode, wherein the cathode contains a perovskite composite oxide as a principal component and contains a compound that includes at least one of S and Cr as a secondary component, a surface of the cathode facing the current collecting member includes a first region that is electrically and physically connected to the current collecting member and a second region that is separated from the current collecting member, the first region and the second region respectively contain a main phase that is configured from the perovskite composite oxide and a secondary phase that is configured from the compound, and an occupied surface area ratio of the secondary phase in the first region is greater than an occupied surface area ratio of the secondary phase in the second region.

US Pat. No. 10,340,528

THREE-DIMENSIONAL ION TRANSPORT NETWORKS AND CURRENT COLLECTORS FOR ELECTROCHEMICAL CELLS

California Institute of T...

1. An electrode comprising:a. a plurality of layers of a first type comprising an active material, wherein at least two of said layers of the first type include a plurality of ion-conducting conduits, each ion-conducting conduit having a longitudinal axis and being filled with an electrolyte or an electrolyte in a porous carrier material; wherein each of the layers of the first type is provided along a layer alignment axis that is substantially parallel to each other layer alignment axis; and
b. at least one layer of a second type comprising additional electrolyte wherein each layer of the first type is separated from each adjacent layer of the first type by at least one layer of the second type; wherein the plurality of layers of the first type and the at least one layer of the second type are substantially parallel to each other;
wherein said ion-conducting conduits are in ionic communication with at least one layer of the second type.

US Pat. No. 10,340,527

LITHIUM-ION SECONDARY BATTERY AND METHOD OF MANUFACTURING THE SAME

HITACHI CHEMICAL COMPANY,...

1. A lithium-ion secondary battery comprising:a positive electrode including a positive current collector and a sulfur-based positive active material containing at least sulfur (S);
a negative electrode including a negative current collector and a silicon-based negative active material containing at least silicon (Si) or a tin-based negative active material containing tin (Sn); and
a separator, wherein:
the positive current collector is made of an aluminum perforated foil having a plurality of through holes formed to pierce the foil from a front surface to a back surface thereof;
the negative current collector is made of a copper foil having a plurality of through holes; and
the positive electrode and the negative electrode are stacked via the separator;
the through holes formed in the aluminum perforated foil and the through holes formed in the copper foil each have a density of 1×104 holes/m2 or more and a hole opening rate of 3 to 50%; and
when the respective average inside diameters of the through holes formed in the aluminum perforated foil and the through holes formed in the copper foil are defined as R (?m), the respective hole opening rates of the aluminum perforated foil and the copper foil are indicated by the following expression:

US Pat. No. 10,340,525

NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY POSITIVE ELECTRODE AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

SANYO Electric Co., Ltd.,...

1. A non-aqueous electrolyte secondary battery positive electrode comprising:a positive electrode active material layer which includes:
a positive electrode active material containing a lithium transition metal oxide;
a tungsten compound;
a phosphoric acid compound not in contact with the positive electrode active material; and
an electrically conductive agent in contact with the tungsten compound and the phosphoric acid compound.

US Pat. No. 10,340,524

NEGATIVE ELECTRODE FOR LITHIUM BATTERY AND LITHIUM BATTERY COMPRISING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. A negative electrode for a lithium battery, comprising:a lithium metal; and
a protective layer disposed on at least a part of the lithium metal, wherein the protective layer comprises a block copolymer comprising a structural block and a hard block covalently linked to the structural block,
wherein the structural block is derived from at least one polymer selected from polystyrene, hydrogenated polystyrene, polyvinylpyridine, polyvinyl cyclohexane, polyethylene, polybutylene, polypropylene, poly(4-methylpentene-1), poly(polybutylene terephthalate), poly(polyethylene terephthalate), polyvinyl cyclohexane, polymaleic acid, poly(maleic anhydride), polyvinylidenefluoride, and polydivinylbenzene, or a copolymer derived from at least two of said polymers,
wherein the structural block comprises a plurality of structural repeating units,
wherein the hard block consists of a plurality of olefin repeating units, and
wherein a mixed weight ratio of the structural block and the hard block is in a range of about 1:1 to about 1:4.

US Pat. No. 10,340,522

BINDER COMPOSITION FOR LITHIUM SECONDARY BATTERY, ELECTRODE FOR LITHIUM SECONDARY BATTERY INCLUDING THE BINDER COMPOSITION, AND LITHIUM SECONDARY BATTERY INCLUDING THE ELECTRODE

SAMSUNG SDI CO., LTD., Y...

1. A binder composition for a lithium secondary battery, the binder composition comprising an interpenetrating network structure that includes:a cyclic polymer, the cyclic polymer including a repeating unit represented by Formula 1 or a repeating unit represented by Formula 2; and
a copolymer, the copolymer including a repeating unit represented by Formula 3 and a repeating unit represented by Formula 4,
wherein an amount of the repeating unit represented by Formula 3 is about 40 mol % to about 70 mol %, based on a total amount of the copolymer:

wherein, in Formulae 1 and 2, R1, R2, R11, R12, R14, and R15 are each independently a hydrogen atom, a substituted or unsubstituted C1-C5 alkyl group, a substituted or unsubstituted C2-C5 alkenyl group, a substituted or unsubstituted C2-C5 alkynyl group, or —(CH2)p—COOX1, in which p is an integer of 1 to 5 and X1 is an alkali metal,
R3, R13, and R16 are each independently —OR4, —NHR5, or —COOX2,
R4 is a hydrogen atom, a substituted or unsubstituted C1-C5 alkyl group, a substituted or unsubstituted C2-C5 alkenyl group, a substituted or unsubstituted C2-C5 alkynyl group, or —(CH2)p—COOX1, in which p is an integer of 1 to 5 and X1 is an alkali metal,
R5 is a hydrogen atom or —COCH3,
X2 is an alkali metal, and
n and m are each independently an integer of 5 to 20,000,

wherein, in Formula 3, R6 and R7 are each independently a hydrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C2-C5 alkenyl group, or a substituted or unsubstituted C2-C5 alkynyl group,

wherein, in Formula 4, R4 and R5 are each independently a hydrogen atom, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C2-C5 alkenyl group, or a substituted or unsubstituted C2-C5 alkynyl group.

US Pat. No. 10,340,521

NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY

SANYO Electric Co., Ltd.,...

1. A nonaqueous electrolyte secondary battery comprising a positive electrode containing a positive electrode active material, a negative electrode containing a negative electrode active material, a separator interposed between the positive electrode and the negative electrode, and a nonaqueous electrolyte, wherein the positive electrode active material is a layered lithium transition metal oxide, the positive electrode active material has a crystallite size of 140 nm or less, the negative electrode active material contains at least carbon, and the nonaqueous electrolyte contains 2 to 30% by volume of fluoroethylene carbonate,the positive electrode active material containing Ni and at least one additional metal element other than Li, wherein the percentage of Ni relative to a total number of moles of the at least one additional metal element other than Li is 50% or more by mole, and
wherein the positive electrode active material is LixNi0.5Co0.2Mn0.3O2 (1.0?x?1.1).

US Pat. No. 10,340,520

NANOCOMPOSITE BATTERY ELECTRODE PARTICLES WITH CHANGING PROPERTIES

Sila Nanotechnologies, In...

1. A battery electrode composition comprising composite particles, each composite particle comprising:a high-capacity active material provided to store and release ions during battery operation, wherein the active material exhibits (i) a specific capacity of at least 220 mAh/g as a cathode active material or (ii) a specific capacity of at least 400 mAh/g as an anode active material;
a porous, electrically-conductive scaffolding matrix material within the pores of which the active material is disposed; and
a shell at least partially encasing the active material and the scaffolding matrix material,
wherein each composite particle includes a first region from the center to a first radius that is halfway to a perimeter of the scaffolding matrix material and a second region from the center to a second radius at the perimeter the scaffolding matrix material, and
wherein each composite particle exhibits at least one average material property that is different in the first and second regions and that changes from the center to the perimeter of the scaffolding matrix material.

US Pat. No. 10,340,519

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRIC DEVICE AND ELECTRIC DEVICE USING THE SAME

Nissan Motor Co., Ltd., ...

1. A negative electrode active material for electric device comprising a silicon-containing alloy havinga composition represented by the following Chemical Formula (1):
SixSnyMzAlwAa  (1)
wherein A is unavoidable impurities, M is one or two or more transition metal elements, x, y, z, w and a represent values of percent by mass, wherein 0 a structure wherein an a-Si phase containing amorphous or low crystalline silicon containing tin in a silicon crystal structure in form of a solid solution is dispersed in a silicide phase containing a silicide of a transition metal as a main component.

US Pat. No. 10,340,517

POSITIVE ELECTRODE ACTIVE MATERIAL, METHOD FOR PREPARING THE SAME AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME

LG Chem, Ltd., (KR)

1. A method for preparing a positive electrode active material comprising:mixing a precursor of a metal for a positive electrode active material with a nanosol of a ceramic-based ion conductor to adsorb the nanosol of the ceramic-based ion conductor on the precursor surface; and
mixing the nanosol of the ceramic-based ion conductor-adsorbed precursor with a lithium raw material, and heat treating the resultant to prepare a positive electrode active material including lithium complex metal oxide particles, wherein the lithium complex metal oxide present on a surface side of the lithium complex metal oxide particles is doped with a metal element of the ceramic-based ion conductor, and
wherein the nanosol of the ceramic-based ion conductor is prepared by dissolving and reacting a precursor of a metal for forming a ceramic-based ion conductor in a glycol-based solvent, and then adding water thereto,
the method further comprising a process of heat treatment at a temperature from 120° C. to a boiling point of a glycol-based solvent after dissolving the precursor of the metal for forming a ceramic-based ion conductor and prior to adding water.

US Pat. No. 10,340,516

POSITIVELY CHARGED SILICON FOR LITHIUM-ION BATTERIES

UMICORE, Brussels (BE)

1. A negative electrode material for a lithium rechargeable battery, the material comprising a core comprising silicon, wherein the core has an average particle size between 20 nm and 200 nm, wherein the surface of the core is at least partly covered by a coating comprising inorganic nanoparticles, and wherein the material has a positive zeta potential in an interval between pH 3.5 and 9.5.

US Pat. No. 10,340,515

CARBON-COATED LITHIUM SULPHIDE

ROCKWOOD LITHIUM GMBH, F...

1. A process for producing an active material for a battery, wherein the process comprises:(a) providing lithium sulfide particles,
(b) optionally drying and/or comminution of the lithium sulfide particles,
(c) adding at least one ionic liquid, optionally in an organic solvent, to the lithium sulfide particles and mixing to obtain a mixture,
(d) heating the mixture of (c), optionally under protective gas, to a temperature above a decomposition limit of the at least one ionic liquid and below a decomposition temperature of the lithium sulfide particles, as a result of which the at least one ionic liquid decomposes to carbon, which deposits as a homogeneous layer on a surface of the lithium sulfide particles,
(e) optionally comminution of the product of (d) to break up agglomerates.

US Pat. No. 10,340,514

NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY

NEC CORPORATION, Tokyo (...

1. A lithium ion secondary battery comprising a positive electrode containing a positive electrode active material, a negative electrode, and an electrolyte,wherein the negative electrode comprises a negative electrode active material layer containing a negative electrode active material comprising silicon (Si) as a constituent element, wherein a coating comprising iron (Fe), manganese (Mn) and oxygen (O) as constituent elements is formed on a surface of the negative electrode active material layer, and a ratio (Fe/Si) of Fe of the coating to Si of the negative electrode active material layer is in a range of 0.001% by mass or more and 1.0% by mass or less; and
the positive electrode active material comprises a lithium iron manganese-based composite oxide having a layered rock-salt structure and represented by the following formula (1):
LixM1yM2z-sFesO2-?  (1)
wherein x, y, z, s and ?satisfy conditions of 1.05?x?1.32, 0.33?y?0.63, 0.06?z?0.50, 0.06?s?0.50, z?s, and 0???0.80, M1 represents at least one metal element selected from Mn, Ti and Zr, and including Mn, and M2 represents at least one metal element selected from Co, Ni and Mn.

US Pat. No. 10,340,513

POSITIVE ACTIVE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, POSITIVE ELECTRODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A positive active material for a lithium-ion secondary battery, the positive active material comprising:a lithium composite oxide particle represented by the following general formula (I):
Lix(Mn2?(a+b+c+d)NiaTibFecMd)(O4?yFy)  (I)
wherein
0.4 0.01?b<0.2,
0.01?c<0.1,
0?d<0.2,
0.9 0.05?y?0.2, and
when 0 the lithium composite oxide particle contains a spinel crystal phase as a first oxide phase and a layered crystal phase as a second oxide phase,
the lithium composite oxide particle includes a particle center portion and a surface layer portion that is closer to a surface of the lithium composite oxide particle than the particle center portion is, and
a fluorine atom concentration Fc (at %) of the particle center portion measured by energy dispersive X-ray spectroscopy is lower than a fluorine atom concentration Fs (at %) of the surface layer portion.

US Pat. No. 10,340,512

COMPOSITE MADE OF POROUS CARBON AND SULFER-CONTAINING ACTIVE MATERIAL AS WELL AS METHOD FOR PRODUCING SAME

1. A method for producing a composite consisting of porous carbon and sulfur-containing active material, said method comprising:(a) providing a carbon powder of porous carbon;
(b) preparing a dispersion of the carbon powder, the sulfur-containing active material, and an aqueous medium;
(c) performing a hydrothermal treatment of the dispersion at a temperature sufficient for melting sulfur so as to form a liquid phase containing sulfur melt and water and to cause infiltration of pores of the porous carbon with the liquid phase; and
(d) removing the water and insulating the composite; and wherein a weight ratio of a weight of the aqueous medium to a weight of solid phase in the dispersion is between 0.5:1 and 3:1;
wherein the provision of the carbon powder comprises a template method in which a carbon skeleton is built up around a structure-directing template of a porous SiO2 soot template material, and the template material is thereupon removed.

US Pat. No. 10,340,511

ELECTRODE, NONAQUEOUS ELECTROLYTE BATTERY, BATTERY PACK AND VEHICLE

KABUSHIKI KAISHA TOSHIBA,...

1. An electrode comprising:a current collector; and
an active material-containing layer which is provided on the current collector and comprises active material particles and insulator particles,
the active material-containing layer having a first face facing the current collector and a second face as a surface of the active material-containing layer, the second face comprising a surface of a part of the insulator particles,
wherein a volume ratio of the insulator particles decreases from the second face toward the first face in the active material-containing layer, and
wherein the insulator particles are present in a region of the active material-containing layer from the second face up to a level in the active material-containing layer, and a distance from the first face to the level is T1, and the distance T1 is within the range of 0.01?T1/T ?0.9, wherein T is a distance from the first face to the second face of the active material-containing layer, and
wherein the average particle size of the insulator particles falls within a range from 10 nm to 70 nm.

US Pat. No. 10,340,510

POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, PREPARING METHOD THEREOF, AND LITHIUM SECONDARY BATTERY INCLUDING POSITIVE ELECTRODE INCLUDING THE SAME

SAMSUNG SDI CO., LTD., Y...

1. A positive electrode active material for a lithium secondary battery, the positive electrode active material comprising nickel, cobalt, and manganese,wherein:
the positive electrode active material has a core part and a surface part,
an amount of manganese in the core part and the surface part is higher than 25 mol %,
amounts of nickel and cobalt in the positive electrode active material vary such that a concentration gradient of the nickel and the cobalt in a direction from the core part to the surface part is present in the positive electrode active material,
the amount of nickel in the core part is about 50 mol % or higher, and
the amount of nickel in the surface part is in a range of about 30 mol % to about 40 mol %.

US Pat. No. 10,340,509

ELECTRODE ASSEMBLY AND BATTERY

SEIKO EPSON CORPORATION, ...

1. An electrode assembly comprising:an assembly including:
an active material section including an active material constituted of a transition metal oxide, the active material section including multiple through holes therein;
a solid electrolyte section including a solid electrolyte having an ion-conducting property; and
a multiple oxide section including at least one of a metal multiple oxide represented by Formula (II) or a derivative thereof, the multiple oxide section being formed in a lamellar form so as to cover the active material section and cover surfaces of the multiple through holes; and
a collector provided on at least one of the active material section and the multiple oxide section,
wherein the Formula (II) is:
Ln2Li0.5M0.5O4   (II)
where Ln represents a lanthanoid element, and M represents a transition metal.

US Pat. No. 10,340,508

POROUS SILICON OXIDE (SIO) ANODE ENABLED BY A CONDUCTIVE POLYMER BINDER AND PERFORMANCE ENHANCEMENT BY STABILIZED LITHIUM METAL POWER (SLMP)

The Regents of the Univer...

1. A method of forming a porous laminate comprising a copper foil current collector in electrical contact with a covering layer of a composition of matter comprising an active electrode material silicon monoxide (SiO), a porous conductive binder, and a stabilized lithium metal powder (SLMP), wherein silicon monoxide (SiO) in powder form is combined with stabilized lithium metal powder (SLMP) in powder form, sodium chloride (NaCl) particles, and the conductive binder, the four components mixed in an organic solvent to form a slurry, the slurry then deposited onto the copper foil current collector, followed by drying, the dried laminate is then soaked in a methanol/water mixture to dissolve the NaCl particles, followed by drying, and wherein the conductive binder is porous with an average pore size of about 10-50 ?m.

US Pat. No. 10,340,507

METHOD OF PREPARING AND APPLICATION OF CARBON SELENIUM COMPOSITES

Institute of Chemistry, C...

1. A method of preparing a selenium carbon composite material, comprising:(a) carbonizing an alkali metal organic salt or an alkaline earth metal organic salt at high temperature, washing with an acid, and drying to obtain a two-dimensional carbon nanomaterial;
(b) mixing the two-dimensional carbon material obtained in step (a) with an organic solvent and selenium, heating the mixture to evaporate the organic solvent, and then going through multistage heat ramping and soaking processes to achieve the two-dimensional selenium carbon composite material.

US Pat. No. 10,340,506

POSITIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY AND LITHIUM ION SECONDARY BATTERY INCLUDING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. A composite positive electrode material for a lithium ion secondary battery, the positive electrode comprising:a positive electrode particle comprising a positive active material particle, wherein the positive electrode particle comprises
a first coating layer on a surface of the positive active material particle wherein the first coating layer comprises a carbonaceous material, and
a second coating layer on the first coating layer, wherein the second coating layer comprises a lithium-containing compound; and
a sulfide solid electrolyte contacting the second coating layer of the positive electrode particle,
wherein the lithium-containing compound of the second coating layer comprises a lithium-containing oxide, a lithium-containing phosphorus oxide, or a combination thereof,
wherein the lithium-containing oxide is a lithium zirconium oxide, a lithium niobium oxide, a lithium titanium oxide, a lithium aluminum oxide, or a combination thereof, and
wherein the lithium-containing phosphorus oxide is a lithium titanium phosphorus oxide, a lithium zirconium phosphorus oxide, or a combination thereof.

US Pat. No. 10,340,505

PRODUCTION METHOD OF ELECTRODE LAMINATE

Toyota Jidosha Kabushiki ...

1. A method for producing an electrode laminate having a current collector layer, an active material layer, and a solid electrolyte layer, comprising:applying an active material slurry onto a surface of the current collector layer to form an active material slurry layer, and
applying an electrolyte slurry onto a surface of the active material slurry layer to form an electrolyte slurry layer,
wherein a dispersion medium of the active material slurry contains butyl butyrate and heptane, wherein a mass % concentration of heptane in the dispersion medium of the active material slurry is more than 0 mass % and 60 mass % or less based on the weight of the dispersion medium in the active material slurry,
wherein a dispersion medium of the electrolyte slurry contains butyl butyrate and heptane, and
wherein the mass % concentration of heptane in the dispersion medium of the active material slurry layer is higher than the mass % concentration of heptane in the dispersion medium of the electrolyte slurry.

US Pat. No. 10,340,503

POUCH-SHAPED SECONDARY BATTERY INCLUDING ELECTRODE LEAD HAVING NOTCH FORMED THEREIN

LG Chem, Ltd., Seoul (KR...

1. A pouch-shaped secondary battery comprising:an electrode assembly in which a positive electrode and a negative electrode are stacked with a separator interposed between the positive electrode and the negative electrode;
an electrode lead electrically connected to electrode tabs of the electrode assembly;
a pouch-shaped battery case made of a laminate sheet including an outer coating layer, a metal layer, and an inner sealant layer; and
a lead box disposed on a sealed portion of the battery case for receiving the electrode lead,
wherein the electrode lead includes a lower electrode lead, which is electrically connected to the electrode tabs, and an upper electrode lead, a portion of which is coupled to the lower electrode lead, and
wherein the portion of the upper electrode lead includes a notch that is configured to rupture and electrically separate the upper electrode lead and the lower electrode lead when a pressure difference between a space within the lead box above the upper electrode lead and a space within the lead box below the lower electrode lead exceeds a predetermined pressure.

US Pat. No. 10,340,502

SECONDARY BATTERY AND MANUFACTURING METHOD OF SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A secondary battery provided with a current interrupt device that interrupts a flow of current between a battery element and an external terminal provided outside of an exterior body within which the battery element is housed, when an internal pressure of the exterior body rises, comprising:a sealing body that is arranged in an open portion provided in the exterior body;
a rivet member that is electrically connected to the external terminal, and passes through a through-hole provided in the sealing body and extends into the exterior body;
a gasket that thermally contacts the rivet member, and is fixed in a state compressed and deformed between the sealing body and the rivet member;
a holder member that retains a collector member that is connected to the battery element inside the exterior body;
a reversing plate that is connected to the rivet member and the collector member, and deforms away from the collector member and toward the rivet member when the internal pressure of the exterior body rises; and
a heat accumulation portion that thermally contacts the rivet member and has a thermal conductivity equal to or greater than the thermal conductivity of the rivet member,
wherein the rivet member includes an opposing portion that faces the sealing body from a distance inside the exterior body, and a peripheral edge portion that is positioned on a peripheral edge of the opposing portion;
the holder member includes an extending portion that is arranged sandwiching the gasket on a side opposite the through-hole, and extends toward the gasket;
an outer peripheral edge of the reversing plate is connected by welding to the peripheral edge portion of the rivet member; and
the heat accumulation portion is sandwiched between the opposing portion of the rivet member and the extending portion of the holder member.

US Pat. No. 10,340,501

ELECTRICAL ENERGY STORAGE DEVICE

KABUSHIKI KAISHA TOYOTA J...

1. An electrical energy storage device comprising a current interruption device configured to interrupt conduction between an electrode and an electrode terminal when pressure in a casing exceeds a predetermined value, whereinthe electrode is accommodated in the casing, and
the electrode terminal is fixed to the casing and configured to transfer electricity with the electrode,
wherein
the current interruption device comprises:
a first conductive member fixed to the casing and connected to the electrode terminal;
a second conductive member disposed at a position spaced from and opposed to the first conductive member, and connected to the electrode;
a first deformable member disposed between the first conductive member and the second conductive member, an end of the first deformable member being connected to the first conductive member, a center portion of the first deformable member being connected to the second conductive member, and the first deformable member being configured to be brought out of conduction with the second conductive member when the pressure in the casing exceeds the predetermined value;
a second deformable member disposed on a side opposite to the first deformable member relative to the second conductive member, and being provided with a projection, on a second conductive member side, that has a shape projecting toward the second conductive member; and
a first seal member disposed between the first conductive member and the second conductive member and keeping an inside of the current interruption device airtight against an outside of the current interruption device,
wherein
a second seal member disposed between the casing and the first conductive member and keeping an inside of the casing airtight against an outside of the casing, and
a second gas permeability between the casing and the first conductive member which is where the second seal member seals is less than a first gas permeability between the first conductive member and the second conductive member which is where the first seal member seals.

US Pat. No. 10,340,500

POUCH BATTERY HAVING IMPROVED OVERCHARGING SAFETY

HYUNDAI MOTOR COMPANY, S...

1. A pouch battery having improved overcharging safety, comprising:an electrode assembly configured to include a cathode plate and an anode plate;
a pouch configured to receive the electrode assembly;
a connecting terminal configured to be electrically connected to or disconnected from the electrode assembly;
a lead tab configured to be electrically connected to the connecting terminal and extending toward an outside of the pouch; and
a current interrupt device (CID) configured to be received in the pouch and have a shape changed according to a change in an internal pressure of the pouch to separate the connecting terminal from the electrode assembly,
wherein the CID includes a body having:
a first port configured to allow communication between an internal space of the pouch and an internal space of the body; and
a second port configured to allow communication between the internal space of the body and the outside of the pouch,
wherein the first port is configured to be opened by a difference between the internal pressure inside the internal space of the pouch and an internal pressure inside the internal space of the body, and
wherein the second port is configured to be opened by a difference between the internal pressure inside the internal space of the body and an external pressure in the outside of the pouch.

US Pat. No. 10,340,499

SEALED SECONDARY BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A sealed secondary battery comprisingan electrode unit as a power generator having a positive electrode and a negative electrode,
a battery case housing the electrode unit,
an electrode terminal electrically connected to the electrode unit, and
a current cutoff mechanism that is arranged in a conductive path between the electrode unit and the electrode terminal to cutoff the conductive path when a pressure rise occurs inside the battery case,
with the current cutoff mechanism comprising
a current collector that is a plate-shaped member electrically connected to the electrode unit and has a thin portion formed relatively thinner than its surrounding, and
a current breaking valve that is a plate-shaped member having a ring-shaped flange electrically connected to the electrode terminal and a concavity descending from the flange toward the thin portion, is placed opposite the thin portion of the current collector, and is in contact at the concavity with the thin portion,
wherein, the concavity of the current breaking valve is configured to comprise a sloped side wall which tapers with decreasing diameter from the inner circumference of the ring-shaped flange to the thin portion and further comprise a dome descending in a spherical cap shape from a rim of the sloped side wall toward the thin portion,
an angle ? between the sloped side wall and a line extending orthogonally from the current corrector and intersecting the inner circumference of the ring-shaped flange satisfies 60°???75°,
the spherical cap-shaped dome has a sphere radius R of 30 mm or larger, but smaller than 100 mm, and
in a planer view along a rotation axis L of the sloped side wall, the outer circumference of the dome is located outside the outer circumference of the thin portion.

US Pat. No. 10,340,498

ELECTRODE ASSEMBLY WITH TAB-LEAD COUPLER AND METHOD FOR MANUFACTURING THE SAME

LG Chem, Ltd., (KR)

1. A battery cell, comprising:an electrode assembly including electrode plates respectively having an electrode tab protruding therefrom and separators, which are alternately stacked on one another in a vertical direction, the electrode tabs being in a bent state and bent relative to the respective electrode plates in the vertical direction of the electrode assembly, the electrode assembly including an electrode lead coupled with an end of the bent electrode tab to form a tab-lead coupler, the tab-lead coupler having an end surrounded by an insulating cap; and
a battery case configured to accommodate the electrode assembly so that the electrode lead is partially exposed outwards,
wherein, when the electrode assembly is assembled within the battery case, the tab-lead coupler is located on an extension line of an outermost electrode plate of the electrode assembly and extends in parallel to an outer surface of the outermost electrode plate, which is located at a side where the electrode tabs are bent, and the tab-lead coupler is opposite to one side of the electrode assembly having the protruded electrode tab, the insulating cap surrounding the end of the tab-lead coupler contacting the outermost electrode plate of the electrode assembly,
wherein the separator is larger than the electrode plate, and the electrode tab is bent toward the tab-lead coupler without coming into contact with an end of the electrode plate by means of an excess portion of the separator elongated farther than the electrode plate, and
wherein the excess portion of the separator is in a bent state and bent relative to the electrode plates toward the tab-lead coupler together with the electrode tabs such that the electrode tabs are bent while being in tight contact with one side of the electrode assembly.

US Pat. No. 10,340,497

SECONDARY BATTERY

NINGDE AMPEREX TECHNOLOGY...

1. A secondary battery, comprising:a cell, comprising:
a positive electrode plate having a positive current collector; and
a negative electrode plate having a negative current collector;
wherein
the secondary battery further comprises:
a first positive electrode tab and a second positive electrode tab, one end of the first positive electrode tab is fixed on and electrically connects with the positive current collector, the other end of the first positive electrode tab extends to the outside of the cell, one end of the second positive electrode tab is fixed on and electrically connects with the other end of the first positive electrode tab, a width of the second positive electrode tab is less than a width of the first positive electrode tab, and a thickness of the second positive electrode tab is larger than a thickness of the first positive electrode tab, the first positive electrode tab is fixed on the positive current collector by ultrasonic welding, uneven points are formed on a first surface of the first positive electrode tab at a part where the first positive electrode tab and the positive current collector are fixed together by the ultrasonic welding, an adhesive tape is bonded on the uneven points formed on the first surface, and a roughness of a first back surface which is opposite to the first surface of the positive current collector is between 1.5 ?m and 10 ?m; and/or
a first negative electrode tab and a second negative electrode tab, one end of the first negative electrode tab is fixed on and electrically connects with the negative current collector, the other end of the first negative electrode tab extends to the outside the cell, one end of the second negative electrode tab is fixed on and electrically connects with the other end of the first negative electrode tab, a width of the second negative electrode tab is less than a width of the first negative electrode tab, and a thickness of the second negative electrode tab is larger than a thickness of first negative electrode tab, the first negative electrode tab is fixed on the negative current collector by ultrasonic welding, uneven points are formed on a second surface of the first negative electrode tab at a part where the first negative electrode tab and the negative current collector are fixed together by the ultrasonic welding, an adhesive tape is bonded on the uneven points formed on the second surface, and a roughness of a second back surface which is opposite to the second surface of the negative current collector is between 1.5 ?m and 10 ?m.

US Pat. No. 10,340,496

CONNECTING POLE FOR A RECHARGEABLE BATTERY, RECHARGEABLE BATTERY HOUSING AND MACHINE FOR PRODUCING A CONNECTING POLE

9. A connecting pole for a rechargeable battery, the connecting pole comprising:a connecting section in which a pole terminal can be attached to the connecting pole,
an attachment section in which the connecting pole can be attached to a battery housing,
a labyrinth section,
an inner wall wherein the entirety of the inner wall has a smooth surface, and
one or more peripheral projections provided on an outer wall of the connecting pole in the labyrinth section,
wherein at least two adjacently arranged peripheral projections are flanged in pairs in the mutually facing direction, wherein at least one flanged projection forms a hook-shaped profile and the peripheral projection has an asymmetrical profile.

US Pat. No. 10,340,495

POWER STORAGE UNIT AND ELECTRONIC DEVICE

Semiconductor Energy Labo...

1. A flexible power storage unit comprising:a flexible external body;
a positive electrode provided inside the flexible external body, the positive electrode including a positive electrode tab portion protruding in a first direction;
a negative electrode provided inside the flexible external body, the negative electrode including a negative electrode tab portion protruding in the first direction;
a first lead electrode provided on the positive electrode tab portion, the first lead electrode having:
a first region over and in contact with the positive electrode tab portion;
a first folded portion at which the first lead electrode is folded on the positive electrode tab portion; and
a second region being adjacent to the first folded portion of the first lead electrode and provided over the first region of the first lead electrode; and
a second lead electrode provided on the negative electrode tab portion, the second lead electrode having:
a first region over and in contact with a first folded portion at which the second lead electrode is folded on the negative electrode tab portion; and
a second region being adjacent to the first folded portion of the second lead electrode and provided over the first region of the second lead electrode,
wherein the first folded portion, the first region, and a first part of the second region of the first lead electrode, the first folded portion, the first region, and a first part of the second region of the second lead electrode, the positive electrode tab portion, and the negative electrode tab portion are provided inside the flexible external body.

US Pat. No. 10,340,494

ELECTRICAL BUS BAR COMPRISING A SENSOR UNIT

AUDI AG, Ingolstadt (DE)...

1. An electrical bus bar for conveying an electric current from a first electrical device to a second electrical device, comprising:a base body, which is formed from an electrically conductive material and has a first terminal for connection to the first electrical device and a second terminal for connection to the second electrical device; and
a sensor unit with a fastening surface, which has at least one sensor element for detecting or recording a physical parameter of the bus bar, wherein the base body has a recess provided with a support surface, into which the sensor unit is depressed and fastened thereto by the fastening surface.

US Pat. No. 10,340,491

METHOD FOR MANUFACTURING SEPARATION FILM AND THE SEPARATION FILM, AND BATTERY USING SAME

Samsung SDI Co., Ltd., Y...

9. An electrochemical battery including a cathode, an anode, a separator, and an electrolyte,wherein the separator is the polyolefin separator according to claim 1.

US Pat. No. 10,340,489

SECONDARY BATTERY

Samsung SDI Co., Ltd., Y...

1. A secondary battery comprising:an electrode assembly;
a case accommodating the electrode assembly; and
a cap assembly coupled to a top portion of the case, the cap assembly comprising a cap-up, a safety vent under the cap-up, a cap-down under the safety vent, an insulator between the safety vent and the cap-down, and a sub-plate on a bottom surface of the cap-down, laser patterns formed by using a laser beam being on a bottom surface of the safety vent and a top surface of the cap-down,
wherein the laser patterns on the safety vent have a ring shape extending along an outer peripheral edge of the safety vent, and
wherein the laser patterns comprise a first laser pattern and a second laser pattern, the second laser pattern being spaced from the first laser pattern with a smooth portion of the safety vent therebetween, the second laser pattern being at an exterior side of the first laser pattern.

US Pat. No. 10,340,488

BATTERY PACK

LG Chem, Ltd., Seoul (KR...

1. A battery pack, comprising:a case configured to accommodate a plurality of battery modules, each of the plurality of battery modules including a plurality of battery cells;
at least one of the plurality of battery modules; and
a protection cover coupled to the case and configured to be capable of opening or closing, the protection cover being further configured to protect an installation member installed in the case,
wherein the protection cover is pivotally coupled to the case,
wherein the protection cover is separable from the case, depending on a pivoting angle of the protection cover, and
wherein the at least one of the plurality of battery modules is in the case.

US Pat. No. 10,340,487

CONTACTING APPARATUS FOR CONTACTING AN ENERGY STORAGE CELL

1. A contacting apparatus for contacting a cylindrical energy storage cell having at least one electric pole and an outer peripheral surface, the contacting apparatus comprising:at least one printed circuit board which is provided for discharging the electrical energy stored in the energy storage cell, the circuit board including an electrically conductive layer which is located on a front side of the at least one printed circuit board facing the energy storage cell;
a releasable mechanical connection configured and operable to press the at least one electric pole with a predetermined contact pressing force against said electrically conductive layer of the at least one printed circuit board; and
at least one circumferential groove defined in the peripheral surface of the cylindrical energy storage cell,
wherein said releasable mechanical connection includes at least one clip having at least one clip hook configured to be engaged in said at least one circumferential groove.

US Pat. No. 10,340,485

POWER STORAGE DEVICE

KABUSHIKI KAISHA TOYOTA J...

1. A power storage device comprising:a metal tubular case body with a closed end, the case body having an opening; and
a metal lid that closes the opening, wherein
the lid includes
a lid body that closes the opening and is supported by an opening end surface of the case body, the opening end surface surrounding the opening,
an inserted portion having a shape of a column, the inserted portion protruding from the lid body toward an inner part of the case body and extending along an inner circumferential surface of the case body, and
a rounded or chamfered corner present in a distal end of the inserted portion in a protruding direction in which the inserted portion protrudes from the lid body, and
a lower limit of an edge-removal dimension of the rounded corner or the chamfered corner is equal to an average particle diameter of a material for the lid.

US Pat. No. 10,340,484

HERMETIC PACKAGING MEMBER FOR FLEXIBLE ELECTROCHEMICAL DEVICE AND ELECTROCHEMICAL DEVICE INCLUDING THE HERMETIC PACKAGING MEMBER

SAMSUNG ELECTRONICS CO., ...

1. A hermetic packaging member for packaging and sealing an electrode assembly of an electrochemical device, the hermetic packaging member comprising:an edge unit; and
a receiving unit having a predetermined depth in a thickness direction of the hermetic packaging member from the edge unit to receive the electrode assembly therein, wherein the edge unit surrounds the receiving unit when viewed from a plan view in the thickness direction,
wherein the receiving unit comprises:
a slope portion connected to the edge unit; and
a plateau portion connected to the slope portion,
wherein the slope portion comprises a plurality of ridges and a plurality of valleys defined between the plurality of ridges, and
wherein the plateau portion of the receiving unit protrudes from the edge unit in a thickness direction of the edge unit.

US Pat. No. 10,340,482

ENERGY STORAGE APPARATUS

GS YUASA INTERNATIONAL LT...

1. An energy storage apparatus, comprising:a first energy storage device and a second energy storage device which are arranged adjacent to each other in a first direction, and each of which includes an electrode assembly and a case for housing the electrode assembly;
a spacer which is arranged adjacent to the case and between the first energy storage device and the second energy storage device; and
a holder which holds the first energy storage device and the second energy storage device and the spacer,
wherein each of the first energy storage device and the second energy storage device includes:
an insulating film which covers an outer surface of the case and is adhered to at least a portion of the outer surface of the case; and
an adhesive layer which adheres the insulating film to the outer surface of the case,
wherein the spacer includes:
a plurality of first contact portions including at least one of an edge and a corner which is in contact with the outer surface of the case of the first energy storage device with the insulating film interposed therebetween; and
a plurality of second contact portions including at least one of an edge and a corner which is in contact with the outer surface of the case of the second energy storage device with the insulating film interposed therebetween,
wherein the plurality of the first contact portions and the plurality of the second contact portions are arranged alternately when viewed from a second direction orthogonal to the first direction,
wherein the insulating film of the first energy storage device is adhered to the outer surface of the case of the first energy storage device in a first adhesion zone which overlaps with at least one of the edge and the corner of the first contact portions in the first direction,
wherein the insulating film of the second energy storage device is adhered to the outer surface of the case of the second energy storage device in a second adhesion zone which overlaps with at least one of the edge and the corner of the second contact portions in the first direction,
wherein the plurality of the first contact portions and the plurality of the second contact portions form a base of the spacer, the base extending in a third direction orthogonal to the first direction and the second direction, and
wherein, in the base, the plurality of the first contact portions protrude toward the case of the first energy storage device in the first direction, and the plurality of the second contact portions protrude toward the case of the second energy storage device in a direction opposite to the first direction.

US Pat. No. 10,340,481

MANUFACTURING METHOD OF OLED DISPLAY PANEL

WUHAN CHINA STAR OPTOELEC...

1. A manufacturing method of an organic light-emitting diode (OLED) display panel, comprising:a step S1 of frosting a portion of an inner surface of an encapsulation cover plate corresponding to both sides of a glass frit to-be-disposed region, wherein a frosted treatment region includes a frame-shaped first frosted region located inside the glass frit to-be-disposed region and a frame-shaped second frosted region located outside the glass frit to-be-disposed region, and each of the first frosted region and the second frosted region are closely adjacent to the glass frit to-be-disposed region through a slit;
a step S2 of disposing a light shielding film at the frosted treatment region of the inner surface of the encapsulation cover plate, wherein the light shielding film is a metal film having a light transmittance less than a first predetermined value or a non-metal film having a light transmittance less than a second predetermined value; and
a step S3 of disposing a glass frit on the glass frit to-be-disposed region, thereby forming a frame-shape sealant.

US Pat. No. 10,340,479

ELECTROLUMINESCENCE DEVICE

SHARP KABUSHIKI KAISHA, ...

1. An electroluminescence device comprising:a base member,
an electroluminescence element disposed on the base member, and
a sealing film to seal the electroluminescence element, wherein
the sealing film includes:
two inorganic layers, and
two organic layers disposed between the two inorganic layers,
the two organic layers are a first organic layer, and a second organic layer over the first organic layer, and
an infiltration rate of the first organic layer is higher than an infiltration rate of the second organic layer.

US Pat. No. 10,340,478

ORGANIC EL DISPLAY DEVICE AND METHOD OF MANUFACTURING AN ORGANIC EL DISPLAY DEVICE

Japan Display Inc., Mina...

1. An organic EL display device, comprising:a thin film transistor substrate including a circuit layer, a passivation layer, a lower electrode formed in each pixel in a display region, an organic material layer that is in contact with the lower electrode, an upper electrode that covers the organic material layer, and a sealing layer that entirely covers a base material, the sealing layer including a first inorganic layer and a second inorganic layer, wherein
the thin film transistor substrate has the display region, and a moisture blocking region that surrounds the display region,
on the moisture blocking region, the circuit layer, the passivation layer, a moisture blocking layer not provided in the display region, and the sealing layer are laminated in this order, and
a composition of an inorganic material forming the moisture blocking layer is different from a composition of an inorganic material forming the first and second inorganic layer of the sealing layer, and
the moisture blocking layer is in contact with the first inorganic layer, and the first inorganic layer is in contact with the second inorganic layer on the moisture blocking layer.

US Pat. No. 10,340,477

DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

SAMSUNG DISPLAY CO., LTD....

1. A display device comprising:a substrate comprising:
a first surface,
a second surface opposite to the first surface,
a first area,
a second area at an end portion of the substrate, and
a bent area between the first and second areas, the first surface in the bent area arranged facing outside the display device and the second surface in the bent area arranged inside the display device;
a display element on the first surface in the first area of the substrate;
an electronic element on the first surface in the second area of the substrate;
a bending protective layer on the first surface in the bent area of the substrate, the bending protective layer extending from the bent area of the substrate to cover the electronic element in the second area of the substrate; and
a protective film on the second surface of the substrate, wherein a groove is defined in the protective film in the bent area of the substrate.

US Pat. No. 10,340,476

DISPLAY DEVICE

Samsung Display Co., Ltd....

1. An electroluminescent device comprising:a lower structure which has an emission area and a peripheral area surrounding the emission area, and which comprises an inorganic insulating film, an insulation film located on the inorganic insulating film, and an electroluminescent unit having a lower electrode disposed on the insulation film, an intermediate film disposed on the lower electrode, and an upper electrode disposed on the intermediate film, and
a flexible encapsulation multilayer disposed on the emission area and the peripheral area, and including at least three layers,
wherein the peripheral area includes an inorganic surface portion substantially surrounding the emission area, located outside the upper electrode at a planar view, and comprising only one or more inorganic materials,
wherein the flexible encapsulation multilayer includes a lower surface comprising only one or more inorganic materials,
wherein an entire of the inorganic surface portion directly contacts the lower surface of the flexible encapsulation multilayer,
wherein the lower structure includes a lower encapsulation inorganic film horizontally expanding under a surface of the lower structure to vertically correspond to the emission area and the peripheral area, and a portion disposed between the lower encapsulation inorganic film and the entire of the inorganic surface portion comprises only one or more inorganic materials, and
wherein the inorganic surface portion includes a first region having a first average width and a second region having a second average width, and the first average width and the second average width are substantially different from each other.

US Pat. No. 10,340,475

OLED PANEL FABRICATION METHOD AND OLED PANEL

WUHAN CHINA STAR OPTOELEC...

1. An organic light emitting display (OLED) panel fabrication method, comprising the following steps:Step S1: providing a substrate, forming an OLED device on the substrate; and arranging at least two circumferential loops of barrier walls, which are spaced from each other, on the substrate along an outer circumference of the OLED device, wherein an innermost loop of the barrier walls defines and delimits a light emission area on the substrate;
Step S2: depositing a first inorganic blocking layer of an entire surface to completely cover the OLED device and entirety of the barrier walls;
Step S3: coating and forming an organic buffer layer on a portion of the first inorganic blocking layer that corresponds to the light emission area and coating and forming a densification layer on a portion of the first inorganic blocking layer that corresponds to an area between every two adjacent ones of the barrier walls; and
Step S4: depositing a second inorganic blocking layer of an entire surface to completely cover the organic buffer layer, entirety of the densification layer, and the entirety of the barrier walls;
wherein the at least two circumferential loops of barrier walls comprise three circumferential loops including the innermost loop, an intermediate loop, and an outermost loop, and the densification layer comprises a first densification layer formed between the barrier walls of the innermost and the intermediate loop and a second densification layer formed between the barrier walls of the intermediate loop and the outermost loop, wherein the first and second densification layers are both formed on the first inorganic blocking layer and are both covered by the second inorganic blocking layer, such that the first and second densification layers are interposed between the first and second inorganic layers and separate from each other.

US Pat. No. 10,340,474

DISPLAY APPARATUS

Samsung Display Co., Ltd....

1. A display apparatus comprising:a substrate comprising an active area and a sealing area surrounding the active area;
a display unit disposed in the active area of the substrate, and comprising a plurality of organic light-emitting devices; and
a sealing member disposed in the sealing area, the sealing member comprising:
a lower sealing member extending in a first direction;
an upper sealing member positioned at an opposite side of the active area from the lower sealing member; and
a right sealing member and a left sealing member extending in a second direction intersecting the first direction,
wherein:
the upper sealing member comprises a first portion, a second portion, and a third portion, the third portion disposed between the first portion and the second portion and connecting the first portion to the second portion;
the first portion and the second portion extend in the first direction; and
the first portion is located closer to the lower sealing member than the second portion.

US Pat. No. 10,340,473

ORGANIC LIGHT EMITTING DISPLAY DEVICE WITH OPTICAL RESONANCE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

SAMSUNG DISPLAY CO., LTD....

1. An organic light emitting display device, comprising:a substrate including a plurality of pixel areas, the plurality of pixel areas includes a first pixel area and a second pixel area;
a plurality of first electrodes corresponding to the pixel areas and separated from each other;
a pixel defining layer including a plurality of openings corresponding to the pixel areas and overlapping the first electrodes;
a plurality of intermediate layers corresponding to the pixel areas and separated from each other, wherein each intermediate layer includes a light emitting layer and a first sub-intermediate layer interposed between the first electrode and the light emitting layer, and a first thickness of the intermediate layer of the first pixel area is different from a second thickness of the intermediate layer of the second pixel area;
a plurality of second electrodes corresponding to the pixel areas and separated from each other, each of the second electrodes extending along a bottom surface and sidewall of the opening in the pixel defining layer and overlapping an upper surface of the pixel defining layer;
a conductive protection layer over the second electrodes; and
a connection electrode layer over the conductive protection layer and electrically connecting the second electrodes.

US Pat. No. 10,340,472

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

SAMSUNG DISPLAY CO., LTD....

1. A display device comprising:a base substrate;
a first transistor above the base substrate and comprising a first input electrode, a first output electrode, a first semiconductor pattern below a first insulation layer, and a first control electrode above the first insulation layer and below a second insulation layer;
a second transistor above the base substrate and comprising a second input electrode, a second output electrode, a second control electrode above the first insulation layer and below the second insulation layer, and a second semiconductor pattern above the second insulation layer;
at least one third insulation layer above the second insulation layer;
a light emitting diode above the at least one third insulation layer and above the second control electrode; and
a capacitor electrically connected to at least one of the first transistor or the second transistor,
wherein the capacitor comprises:
a first electrode disposed on a same layer as the first control electrode; and
a second electrode disposed below the first electrode,
wherein the second insulation layer is disposed between the first electrode and the second electrode.

US Pat. No. 10,340,471

ORGANIC ELECTROLUMINESCENT ELEMENT AND NOVEL IRIDIUM COMPLEX

UDC Ireland Limited, Dub...

1. An organic electroluminescence device, comprising:a substrate;
a pair of electrodes including an anode and a cathode, disposed on the substrate; and
at least one organic layer including a light emitting layer, disposed between the electrodes,
wherein at least one kind of compound represented by the following general formula (1) is contained in at least one of the organic layers:

wherein R111 to R134 each independently represent a hydrogen atom or a substituent; at least two adjacent groups out of R111 to R114, R114 and R115, at least two adjacent groups out of R115 to R118, at least two adjacent groups out of R119 to R122, R122 and R123, at least two adjacent groups out of R123 to R126, at least two adjacent groups out of R127 to R130, R130 and R131, or at least two adjacent groups out of R131 to R134 may be bonded to each other to form a ring, provided that at least one of R119 to R134 represents a group represented by the following general formula (A); and that none of R111 to R118 represent a group represented by general formula (A);

X represents a cyano group or a trifluoromethyl group; L represents a single bond or a divalent linking group; R represents a substituent; when a plurality of R's are present, they may be the same as or different from each other; n represents an integer of 0 to 4; * represents a binding site.

US Pat. No. 10,340,469

LIGHT EMITTING DIODE CHIP AND FABRICATION METHOD

XIAMEN SANAN OPTOELECTRON...

1. A fabrication method of a light-emitting diode chip, comprising:1) providing a light-emitting epitaxial laminated layer, comprising a first-type semiconductor layer, a second-type semiconductor layer and an active layer between them, which has two surfaces opposite to each other, wherein, the second surface is the light-emitting surface;
2) fabricating a first electrical connection layer over the first surface of the light-emitting epitaxial laminated layer, which is composed of first geometric pattern arrays;
3) fabricating a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer, which is composed of second geometric pattern arrays;
4) fabricating a transparent current spreading layer over the surface of the second electrical connection layer; when external power is connected, the horizontal resistance of current passing through the transparent current spreading layer is less than that passing through the first electrical connection layer;
wherein step 3) comprises evaporating a second electrical connection layer over the second surface of the light-emitting epitaxial laminated layer; evaporating a second dielectric material layer over the surface; etching the second electrical connection layer region to expose the second electrical connection layer; and flattening the surface of the second connection layer through chemical mechanical polishing.

US Pat. No. 10,340,468

DISPLAY DEVICE

Japan Display Inc., Toky...

1. A display device comprising:a base film;
a display-element layer over the base film, the display-element layer having a display region including a plurality of pixels; and
a cap film over the display-element layer, wherein
the base film has a first gap separating the base film into a first region and a second region,
the cap film has a second gap separating the cap film into a third region and a fourth region,
the display-element layer comprises an insulating film extending over the first region and the second region and overlapping the first gap, and
the insulating film extends over a region overlapping with the third region and a region overlapping with the fourth region, and overlaps the second gap.

US Pat. No. 10,340,467

ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. An organic light-emitting device comprising:a first electrode;
a second electrode; and
an organic layer disposed between the first electrode and the second electrode, wherein the organic layer comprises an emission layer and at least one organometallic compound represented by Formula 1:

wherein in Formula 1,
M is a Period 3 transition metal;
A1 ring and A2 ring are each independently selected from a benzene, a pyridine and a pyrimidine;
A3 ring and A4 ring are each independently selected from a benzene, a pyridine, an isoquinoline, a pyrazole, a dibenzofuran and a tetrahydroindazole;
provided that each of A3 ring and A4 ring is not simultaneously a benzene;
X1 to X4 are each independently selected from C and N;
B1 to B4 are each a single bond;
Y1 and Y3 are each a single bond;
Y2 is selected from a phenylene group; and
a phenylene group substituted with at least one selected from a deuterium, a methyl group, a tert-butyl group, and a phenyl group;
L1 is selected from a monodentate ligand and a bidentate ligand;
a1 is selected from 0, 1, and 2;
R1 to R4 are each independently selected from a hydrogen, a deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid or a salt thereof, a sulfonic acid or a salt thereof, a phosphoric acid or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic hetero-condensed polycyclic group, —C(?O)(Q1), —Si(Q1)(Q2)(Q3), and —N(Q1)(Q2); wherein R1 and R4 or R2 and R3 are optionally linked to form a saturated or unsaturated ring;
Q1 to Q3 are each independently selected from a C1-C60 alkyl group and a C6-C60 aryl group;
b1 to b4 are each independently selected from 1, 2, 3, and 4; and
at least one substituent of the substituted C6-C60 arylene group, substituted C1-C60 heteroarylene group, substituted divalent non-aromatic condensed polycyclic group, substituted divalent non-aromatic hetero-condensed polycyclic group, the substituted C1-C60 alkyl group, substituted C2-C60 alkenyl group, substituted C2-C60 alkynyl group, substituted C1-C60 alkoxy group, substituted C3-C10 cycloalkyl group, substituted C1-C10 heterocycloalkyl group, substituted C3-C10 cycloalkenyl group, substituted C1-C10 heterocycloalkenyl group, substituted C6-C60 aryl group, substituted C6-C60 aryloxy group, substituted C6-C60 arylthio group, substituted C1-C60 heteroaryl group, substituted monovalent non-aromatic condensed polycyclic group, and substituted monovalent non-aromatic hetero-condensed polycyclic group is selected from
a deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from a deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amino group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, and a phosphoric acid group or a salt thereof; and
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic hetero-condensed polycyclic group.

US Pat. No. 10,340,466

ORGANIC METAL COMPOUND, ORGANIC LIGHT-EMITTING DEVICES EMPLOYING THE SAME

INDUSTRIAL TECHNOLOGY RES...

1. An organic metal compound, having a structure of Formula (I) or Formula (II):
wherein, R1 is independently hydrogen, C1-12 alkyl group, C1-12 alkoxy group, amine, C2-6 alkenyl group, C2-6 alkynyl group, C5-10 cycloalkyl group, C3-12 heteroaryl group, or C6-12 aryl group; R2, R3, R4, and R5 are independently hydrogen, halogen, C1-12 alkyl group, C1-12 alkoxy group, C1-12 fluoroalkyl group, or two adjacent groups of R2, R3, R4, and R5 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; R6 and R7 are independent C1-6 alkyl group, or phenyl group; R8, R9, R10, and R11 are independently hydrogen, halogen, C1-12 alkyl group, C1-12 fluoroalkyl group, or two adjacent groups of R8, R9, R10, and R11 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; R12, R13, R14, and R15 are independently hydrogen, halogen, C1-12 alkyl group, C1-12 fluoroalkyl group, or two adjacent groups of R12, R13, R14, and R15 are optionally combined with the carbon atoms which they are attached to, to form a cycloalkyl group, or aryl group; m is 1 or 2; and, n is 0 or 1.

US Pat. No. 10,340,465

PEROVSKITE PARTICLES FOR PRODUCING X-RAY DETECTORS BY MEANS OF DEPOSITION FROM THE DRY PHASE

SIEMENS HEALTHCARE GMBH, ...

1. A composition comprising at least two powders, wherein the powders are selected from the group consisting of a powder comprising a p-doped perovskite, a powder comprising an n-doped perovskite, and a powder comprising an undoped perovskite, wherein the at least two powders are intermixed or are present as separate phases, and wherein the p-doped and the n-doped perovskite is a material selected from the group of ABX3 and AB2X4, where A is a positively charged element from the 4th period or above of the periodic table and/or mixtures therefrom, B is a monovalent cation whose volume parameter for the respective element A is sufficient for perovskite lattice formation, and X is an anion of chloride, bromide or iodide.

US Pat. No. 10,340,464

ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES

Universal Display Corpora...

18. A consumer product comprising an organic light-emitting device (OLED) comprising:an anode;
a cathode; and
an organic layer disposed between the anode and the cathode, the organic layer comprising a compound of Formula I:

wherein each of R1, R2, and R6 independently represents mono, di, tri, or tetra substitution, or no substitution;
wherein R3 represents mono, or di substitution, or no substitution;
wherein R5 represents mono, di, or tri substitution, or no substitution;
wherein X is selected from the group consisting of O, S, and Se;
wherein L is a direct bond or an organic linker;
wherein each of R1, R2, R3, R4, R5, and R6 is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acid, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof;
wherein any adjacent substituents are optionally joined or fused into a ring; and
wherein (1) when L is not ortho to X, at least one of R5 or R6 is ortho to X and is selected from the group consisting of aryl, heteroaryl, substituted aryl, and substituted heteroaryl; or
(2) when L is ortho to X, one of R6 is ortho to X and is selected from the group consisting of aryl, heteroaryl, substituted aryl, and substituted heteroaryl.

US Pat. No. 10,340,463

ORGANIC LIGHT-EMITTING DEVICE

Samsung Display Co., Ltd....

1. An organic light-emitting device comprising:a first electrode;
a second electrode; and
an organic layer between the first electrode and the second electrode and comprising:
an emission layer,
a hole transport region between the first electrode and the emission layer and comprising an electron blocking layer and at least one selected from a hole injection layer, a hole transport layer, and a buffer layer; and
an electron transport region between the emission layer and the second electrode and comprising a hole blocking layer and at least one selected from an electron transport layer and an electron injection layer,
wherein a triplet energy of a material for the electron blocking layer (EBL T1) and a triplet energy of a material for the hole blocking layer (HBL T1) satisfy the following Equation:
EBL T1>HBL T1.

US Pat. No. 10,340,462

COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING SAME

Samsung Display Co., Ltd....

1. A compound selected from Compounds 1 to 2, 4 to 7, 9, 10, 13 to 19, 21, 22, 25 to 29, 31, 32, 34 to 78, 80, 81, and 83 to 90:

US Pat. No. 10,340,459

TERAHERTZ DETECTION AND SPECTROSCOPY WITH FILMS OF HOMOGENEOUS CARBON NANOTUBES

International Business Ma...

1. A method for forming a detector, comprising:aligning a plurality of purified semiconducting carbon nanotubes on a substrate, in parallel, to form a stack of nanotube monolayers;
cutting the aligned plurality of semiconducting carbon nanotubes in the stack of nanotube monolayers to a uniform length corresponding to a detection frequency; and
forming metal contacts at opposite ends of the stack of nanotube monolayers.

US Pat. No. 10,340,458

PEROVSKITE HYBRID SOLAR CELLS

The University of Akron, ...

1. A method of forming a bulk heterojunction active layer of a solar cell comprising:providing an n-type perovskite hybrid semiconductor material;
combining said perovskite hybrid semiconductor material with a water-soluble or a non-water-soluble fullerene to form a composite material, wherein said composite material is formed by the method of:
combining a methyl ammonium iodide (MAI) material and said water-soluble fullerene or said non-water-soluble fullerene with ethanol to form a precursor material;
providing a lead iodide material; and
applying said precursor material to said lead iodide material to form said composite material of methylammonium lead iodide perovskite and water-soluble fullerene; and
applying said composite material in the solar cell as the bulk heterojunction active layer.

US Pat. No. 10,340,457

ORGANIC SEMICONDUCTING COMPOUNDS

Merck Patent GmbH, Darms...

1. A compound comprising one or more divalent units of formula I
wherein
one of A1 and A2 is X and the other is a single bond,
one of A3 and A4 is X and the other is a single bond,
one of A5 and A6 is X and the other is a single bond,
one of A7 and A8 is X and the other is a single bond,
X is, on each occurrence identically or differently, CR1R2, C?CR1R2, SiR1R2, GeR1R2, C?O or NR1,
R1, R2 denote, independently of each other and on each occurrence identically or differently, H, halogen or straight chain, branched or cyclic alkyl group with 1 to 50 C atoms in which one or more non-adjacent CH2 groups are optionally replaced, in each case independently from one another, by —O—, —S—, —C(O)—, —C(O)O—, —O—C(O)—, —O—CO(O)—O—, —SO2—, —SO3—, —NR0—, —SiR0R00—, —CF2—, —CR0?CR00—, —CY1?CY2— or —C?C— in such a manner that O and/or S atoms are not linked directly to one another, and in which one or more, but not all, H atoms are optionally replaced by F, Cl, Br, I or CN, or denotes monocyclic or polycyclic aryl or heteroaryl, each of which is optionally substituted with one or more groups RS and has 4 to 30 ring atoms,
p, q are independently of each other 0, 1 or 2,
Ar21, Ar22, Ar23, Ar24 denote, independently of each other, and on each occurrence identically or differently, an aromatic or heteroaromatic group, each of which is monocyclic or polycyclic, has 4 to 20 ring atoms, and is optionally substituted by one or more groups RS,
RS denotes, on each occurrence identically or differently, F, Br, Cl, —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(O)NR0R00, —C(O)X0, —C(O)R0, —C(O)OR0, —NH2, —NR0R00, —SH, —SR0, —SO3H, —SO2R0, —OH, —NO2, —CF3, —SF5, optionally substituted silyl, carbyl or hydrocarbyl with 1 to 40 C atoms that is optionally substituted and optionally comprises one or more hetero atoms,
R0, R00 independently of each other denote H or optionally substituted C1-40 carbyl or hydrocarbyl,
Y1, Y2 independently of each other denote H, F, Cl or CN,
X0 denotes halogen.

US Pat. No. 10,340,455

MANUFACTURING METHOD OF MASK PLATE ASSEMBLY WITH COLLOID

BOE TECHNOLOGY GROUP CO.,...

1. A method for manufacturing a mask plate assembly, the method comprising:providing a mask plate and a frame;
securing the mask plate to the frame, wherein the secured mask plate comprises solder joints and a redundant portion extending out of the frame;
removing at least a part of the redundant portion, wherein the redundant portion not removed is a warped portion of the secured mask plate; and
forming a colloid without relative movement between the mask plate and the frame by dispensing glue in a predetermined area of a surface of the mask plate, and by curing the glue, wherein the predetermined area comprises an area near an edge of the secured mask, the predetermined area with the colloid is of a thickness greater than any other area on the surface of the mask plate where the colloid is not formed, and the colloid covers the solder joints, the warped portion of the mask plate, or the solder joints and the warped portion of the mask plate.

US Pat. No. 10,340,454

DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME

SAMSUNG DISPLAY CO., LTD....

1. A display device comprising:a display panel; and
a first protective substrate positioned under the display panel and including a first sub-region and a second sub-region positioned at a first side of the first sub-region,
wherein a thickness of the first protective substrate in the first sub-region is greater than a thickness of the first protective substrate in the second sub-region,
wherein the first protective substrate further comprises:
a first cut surface positioned at the first side of the first sub-region; and
a second cut surface positioned at a side of the second sub-region, which is opposite to the first side of the first sub-region, and which is substantially parallel with the first cut surface, and
wherein a slope of the first cut surface is different from a slope of the second cut surface.

US Pat. No. 10,340,453

FORMING AND OPERATING MEMORY DEVICES THAT UTILIZE CORRELATED ELECTRON MATERIAL (CEM)

ARM Ltd., Cambridge (GB)...

1. A device comprising:a resistive memory element having a first terminal and a second terminal; and
a correlated electron material (CEM) device coupled in series with the resistive memory element, the CEM device to couple with the resistive memory element between a common top electrode and a common bottom electrode in read operations or write operations for the resistive memory element, and wherein the CEM device is configured to operate in a region of an impedance profile that is absent a Mott or Mott-like transition during the read operations or the write operations for the resistive memory element.

US Pat. No. 10,340,452

VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

NEC CORPORATION, Minato-...

1. A variable resistance element comprising a configuration in which an ion conduction layer is arranged between an upper electrode and a lower electrode, whereinat least a side surface of the lower electrode is covered by a barrier metal,
a step-like recess part is formed on a top surface of the lower electrode, a portion of the barrier metal located near the top surface of the lower electrode is also removed to form a part of the step-like recess part, and
the ion conduction layer is formed in contact with at least the step-like recess part on a surface of the lower electrode.

US Pat. No. 10,340,451

SWITCHING ELEMENT HAVING OVERLAPPED WIRING CONNECTIONS AND METHOD FOR FABRICATING SEMICONDUCTOR SWITCHING DEVICE

NEC CORPORATION, Minato-...

1. A switching element comprising:a first variable resistance element comprising a first input/output terminal and a first connection terminal;
a second variable resistance element comprising a second input/output terminal and a second connection terminal;
a rectifying element comprising a control terminal and a third connection terminal;
a first wiring connected to the first input/output terminal of the first variable resistance element;
a second wiring connected to the second input/output terminal of the second variable resistance element; and
a third wiring connected to the control terminal of the rectifying element, wherein
the first connection terminal, the second connection terminal and the third connection terminal are interconnected,
one of the first wiring and the second wiring overpasses another of the first wiring and the second wiring,
one of the first wiring and the second wiring is a horizontal line commonly connecting a plurality of first input/output terminals of first variable resistance elements, comprising the first variable resistance element, arranged in a horizontal direction,
the another of the first wiring and the second wiring is a vertical line commonly connecting a plurality of second input/output terminals of second variable resistance elements, comprising the second variable resistance element, arranged in a vertical direction,
the third wiring is a diagonal line commonly connecting a plurality of control terminals of rectifying elements, comprising the rectifying element, arranged in a diagonal direction, and has a folded structure comprising another diagonal line commonly connecting at least one of other control terminals of at least one of other rectifying elements arranged in the diagonal direction located differently from the plurality of control terminals of the rectifying elements, and
the third wiring is configured to be connected to a programming line.

US Pat. No. 10,340,450

RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND FORMING METHOD THEREOF

WINBOND ELECTRONICS CORP....

1. A resistive random access memory structure, comprising: an interlayer dielectric (TLD) layer formed on a substrate, wherein the ILD layer is a dielectric comprising oxygen; an oxygen diffusion barrier layer formed on the ILD layer; a bottom electrode layer formed on the oxygen diffusion barrier layer; wherein the bottom electrode layer comprises: a first electrode layer formed on the oxygen diffusion barrier layer; a single layer of a first oxygen-rich layer formed on the first electrode layer; and a second electrode layer formed on the first oxygen-rich layer; a resistive switching layer formed on the bottom electrode layer; a second oxygen-rich layer between the resistive switching layer and the second electrode layer; a third electrode layer formed on the resistive switching layer; a single layer of an oxygen stopping layer formed on the third electrode layer; and a fourth electrode layer formed on the oxygen stopping layer, wherein the single layer of the first oxygen-rich layer directly contacts the first electrode layer and the second electrode layer, and the single layer of the oxygen stopping layer directly contacts the third electrode layer and the fourth electrode layer.

US Pat. No. 10,340,449

RESISTIVE MEMORY DEVICE CONTAINING CARBON BARRIER AND METHOD OF MAKING THEREOF

SANDISK TECHNOLOGIES LLC,...

1. A resistive memory device comprising at least one resistive memory element, wherein the at least one resistive memory element comprises;a carbon barrier material portion; and
a layer stack that is disposed between a first electrode and a second electrode, wherein the layer stack comprises:
a first interfacial metal oxide layer;
a resistive memory material portion in direct contact with a surface of the first interfacial metal oxide layer; and
a second interfacial metal oxide layer in direct contact with a surface of the resistive memory material portion,
wherein the carbon barrier material portion directly contacts the first interfacial metal oxide layer,
wherein the carbon barrier material portion directly contacts the first electrode, and
wherein:
the first electrode comprises a pillar shaped conductive material portion that contacts a first electrically conductive line that extends along a first direction;
the second electrode comprises a portion of a second electrically conductive line that extends along a second direction that is different from the first direction; and
the carbon barrier material portion and the resistive memory material portion are located at a region in which the pillar shaped conductive material portion and the second electrically conductive line have a minimum spacing therebetween.

US Pat. No. 10,340,448

ALL-PRINTED PAPER MEMORY

KING ABDULLAH UNIVERSITY ...

1. A method of forming a paper-based substrate memory device, comprising:coating, with at least one printer, one or more areas of a paper substrate with a conductor material to form a first electrode of a memory, wherein coating the one or more areas of the paper substrate comprises coating and curing a plurality of individual layers of the conductor material over the one or more areas of the paper substrate;
depositing, with the least one printer, a layer of an insulator material over one or more areas of the conductor material, wherein the layer of insulator material has a thickness of more than 40 ?m to less than 100 ?m; and
depositing, with the least one printer, a layer of a metal over one or more areas of the conductor material to form a second electrode of the memory.

US Pat. No. 10,340,447

THREE-TERMINAL METASTABLE SYMMETRIC ZERO-VOLT BATTERY MEMRISTIVE DEVICE

International Business Ma...

1. A memristive structure for providing symmetric modulation between resistance states, the structure comprising:a first electrode and a second electrode each directly contacting an insulating substrate therein;
an anode contacting the first and second electrodes;
an ionic conductor formed over the anode;
a cathode formed over the ionic conductor; and
a third electrode formed over the cathode;
wherein the anode and the cathode are formed from metastable materials enabling bidirectional transport of ions between the anode and cathode resulting in a resistance adjustment of the memristive structure.

US Pat. No. 10,340,446

SEMICONDUCTOR STRUCTURE MULTILAYERS HAVING A DUSTING MATERIAL AT AN INTERFACE BETWEEN A NON-MAGNETIC LAYER AND A MAGNETIC LAYER

International Business Ma...

1. A method of forming a semiconductor structure, comprising:forming a multilayer stack of two or more multilayers disposed over a seed layer, each of the two or more multilayers comprising:
a magnetic layer; and
an additional layer disposed over a top surface of the magnetic layer;
wherein the additional layer is non-magnetic, the additional layer comprising a first non-magnetic material and a dusting material comprising a second non-magnetic material different than the first non-magnetic material; and
wherein the multilayer stack provides a reference layer of a perpendicular magnetic tunnel junction stack.

US Pat. No. 10,340,445

PSTTM DEVICE WITH BOTTOM ELECTRODE INTERFACE MATERIAL

Intel Corporation, Santa...

1. A magnetic tunneling junction (MTJ) material layer stack over a substrate, the stack comprising:one or more electrode interface material layers comprising Ta or CoFeB over a first electrode metal;
a seed layer comprising Pt over the electrode interface material layers;
a synthetic antiferromagnet (SAF) stack over the seed layer;
a fixed magnetic material layer between the SAF and a free magnetic material layer; and
a dielectric material layer between the fixed magnetic material layer and the free magnetic material layer.

US Pat. No. 10,340,444

SEMICONDUCTOR ELEMENT WITH HALL ELEMENT AND SEALING RESIN

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:a Hall element including a functional surface and at least one electrode provided on the functional surface;
a sealing resin including a resin obverse surface and a resin reverse surface spaced apart from each other in a thickness direction, the sealing resin covering at least a portion of the Hall element; and
at least one mount surface electrically connected to the electrode and exposed from the resin reverse surface,
wherein the Hall element includes an exposed surface opposite to the functional surface, the exposed surface being flush with either one of the resin obverse surface and the resin reverse surface,
as viewed in the thickness direction, the sealing resin surrounds the Hall element and overlaps with the Hall element.

US Pat. No. 10,340,442

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

KABUSHIKI KAISHA TOSHIBA,...

1. A magnetoresistive element, comprising:a first magnetic layer;
a second magnetic layer comprising a first magnetization direction;
a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer;
a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer, the third magnetic layer comprising a second magnetization direction, the first magnetization direction being different from the second magnetization direction; and
a metal layer disposed between the second magnetic layer and the third magnetic layer,
wherein:
the metal layer is in direct contact with the second magnetic layer and the third magnetic layer;
the second magnetic layer includes a magnetic material including at least one element selected from a first group consisting of Mn, Fe, Co, and Ni, at least one element selected from a second group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and at least one element selected from a third group consisting of B, C, Mg, Al, Sc, Ti, Cu, and Zn; and
the metal layer includes at least one element selected from the group consisting of Mg, Sc, Co, and Zn.

US Pat. No. 10,340,441

LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION, PIEZOELECTRIC ELEMENT USING THE SAME, AND METHOD OF MANUFACTURING LEAD-FREE PIEZOELECTRIC CERAMIC COMPOSITION

NGK SPARK PLUG CO., LTD.,...

1. A lead-free piezoelectric ceramic composition whose main phase is of an alkali niobate/tantalate perovskite oxide having piezoelectric properties and whose subphase is of a metal oxide different from the main phase, wherein:the mole ratio (Na/K) between Na (sodium) and K (potassium) in the main phase falls within a range represented by 0.40<(Na/K)<3.0;
the main phase has a crystal structure in which
(i) first spots corresponding to a primitive lattice period and
(ii) second spots corresponding to a lattice period two times the primitive lattice period and being weaker than the first spots appear in an electron beam diffraction image obtained through a transmission electron microscope on the condition that an electron beam enters from the <100> direction with the main phase represented as a pseudo-cubic crystal system; and
the water absorption rate of the lead-free piezoelectric ceramic composition is 0.1% or less.

US Pat. No. 10,340,440

ELECTRONIC DEVICE, METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND MOVING OBJECT

Seiko Epson Corporation, ...

1. An electronic device, comprising:a base material having a first surface;
a first metal film disposed on the first surface and containing nitrogen and chromium; and
a second metal film disposed on a surface of the first metal film on the opposite side to the first surface and containing gold, wherein:
the first metal film includes a region in which the number of nitrogen atoms in the first metal film is between 20% to 100% of the number of chromium atoms.

US Pat. No. 10,340,439

METHOD FOR MANUFACTURING PIEZOELECTRIC ACTUATOR

Brother Kogyo Kabushiki K...

1. A piezoelectric actuator comprising:an insulating layer;
a plurality of individual electrodes;
a piezoelectric layer;
a common electrode; and
an extending portion extending from the common electrode in an extending direction,
wherein:
the plurality of individual electrodes are disposed between the insulating layer and the piezoelectric layer,
the piezoelectric layer is disposed between the plurality of individual electrodes and the common electrode, and
the extending portion is disposed on a same side of the piezoelectric layer as the common electrode, wherein the extending portion is provided with a terminal on a distal end portion in the extending direction relative to the common electrode.

US Pat. No. 10,340,438

LASER ANNEALING QUBITS FOR OPTIMIZED FREQUENCY ALLOCATION

International Business Ma...

1. A method for forming a qubit, the method comprising:forming a Josephson junction between two capacitive plates, wherein the Josephson junction is an aluminum/aluminum-oxide/aluminum trilayer Josephson junction on a substrate; and
annealing the Josephson junction with a thermal source, wherein the thermal source is a laser that generates a beam, the beam having a diameter that is greater than a diameter of the Josephson junction, wherein the diameter of the beam encompasses one or more portions of each of the two capacitive plates, and wherein annealing the Josephson junction alters the frequency of the qubit.

US Pat. No. 10,340,435

THERMOELECTRIC CONVERSION DEVICE

Industrial Technology Res...

1. A thermoelectric conversion device, comprising at least one thermoelectric conversion unit, wherein each of the at least one thermoelectric conversion unit comprising:at least one first electrode, having a first fluid channel embedded therein, so as to form a hollow structure;
at least one second electrode, having a second fluid channel embedded therein, so as to form a hollow structure;
a P-type thermoelectric material, located between each of the at least one first electrode and each of the at least one second electrode; and
an N-type thermoelectric material, wherein each of the at least one second electrode is located between the P- type thermoelectric material and the N-type thermoelectric material; and
at least four insulation conduits, wherein each of two terminals of the first fluid channel and two terminals of the second fluid channel respectively connects with different insulation conduits,
wherein each of the at least one first electrode, the P-type thermoelectric material, each of the at least one second electrode, and the N-type thermoelectric material are arranged in a sequence along a direction.

US Pat. No. 10,340,434

COMBUSTION MODULE HAVING SUBSTANTIALLY UNIFORM TEMPERATURE

1. A hybrid solar system comprising:a concentrator for concentrating solar radiation;
at least one combustion module that includes
a body having a first end face and a second end face, the combustion module being arranged such that concentrated radiation illuminates one face of the body, and
several combustion chambers formed in said body, and extending parallel to each other along a longitudinal direction between the first end face and the second end face of the body, a distance between the combustion chambers and/or dimensions of the combustion chambers being chosen so as to reduce a temperature gradient transversal to the combustion chambers, wherein
the body comprises two lateral faces and first combustion chambers situated near to the lateral faces and second combustion chambers arranged between the first combustion chambers, the first combustion chambers having a transversal cross-section greater than the second combustion chambers;
a convertor for converting thermal energy into electricity on a face opposite to that illuminated by the concentrated solar radiation; and
a controller for controlling combustion in the combustion module as a function of the concentrated solar radiation.

US Pat. No. 10,340,433

LIGHT EMITTING DEVICE

LG INNOTEK CO., LTD., Se...

1. A light emitting device comprising:a body having a cavity;
first and second lead frames disposed in the cavity;
a third lead frame disposed in the cavity and disposed between the first and second lead frames;
a fourth lead frame disposed in the cavity, disposed between the first and second lead frames, and spaced apart from the third lead frame;
a first light emitting chip disposed on the first lead frame; and
a second light emitting chip disposed on the second lead frame,
wherein the body includes: first and second lateral sides disposed in opposition to each other; and third and fourth lateral sides disposed in opposition to each other,
wherein the first lead frame includes a first lead part protruding through the first lateral side of the body and a second lead part protruding through the second lateral side of the body,
wherein the second lead frame includes a third lead part protruding through the first lateral side of the body and a fourth lead part protruding through the second lateral side of the body,
wherein the third lead frame includes a fifth lead part protruding through the first lateral side of the body,
wherein the fourth lead frame includes a sixth lead part protruding through the second lateral side of the body,
wherein top surfaces of the first, second, third and fourth lead frames are disposed on a bottom of the cavity,
wherein respective bottom surfaces of each of the first, second, third and fourth lead frames are exposed to a bottom of the body,
wherein, in the body, the first and second lateral sides have respective lengths longer than respective lengths of the third and fourth lateral sides,
wherein the fifth lead part of the third lead frame is disposed between the first lead part of the first lead frame and the third lead part of the second lead frame,
wherein the sixth lead part of the fourth lead frame is disposed between the second lead part of the first lead frame and the fourth lead part of the second lead frame,
wherein the first light emitting chip is electrically connected with the first and third lead frames,
wherein the second light emitting chip is electrically connected with the second and fourth lead frames, and
wherein the first and second light emitting chips are individually driven.

US Pat. No. 10,340,431

LIGHT-EMITTING DEVICE WITH METAL BUMP

EPISTAR CORPORATION, Hsi...

1. A light-emitting device comprising:a light-emitting diode comprising:
an active layer; and
a pad electrically connected to the active layer;
a metal bump, formed under the pad in a cross-sectional view, and having a first side surface and a first bottom surface which is observed in a bottom view different from the cross-sectional view;
a reflective insulation layer enclosing the metal bump in a configuration of exposing the first bottom surface and directly contacting the first side surface; and
a plurality of scratched lines directly formed on the first bottom surface,
wherein the metal bump has an oval shape in the bottom view, and
wherein the reflective insulation layer has a bottommost surface which is flush or coplanar with the metal bump.

US Pat. No. 10,340,430

OPTOELECTRONIC LAMP DEVICE AND METHOD OF PRODUCING SAME

OSRAM Opto Semiconductors...

1. An optoelectronic lamp device comprising:an optoelectronic semiconductor component comprising a top side comprising a light-emitting face,
a housing embedding the optoelectronic semiconductor component and leaving free the light-emitting face, and
an electrical plated-through hole,
wherein a housing face is coated with a light-scattering dielectric resist layer that scatters light incident on a face of the light-scattering dielectric resist layer facing away from the housing face,
a burr is formed at an edge of the top side of the optoelectronic semiconductor component, said burr being coated with the light-scattering dielectric resist layer,
the electrical plated-through hole runs from a top side of the housing to an underside of the housing situated opposite to the top side and is embedded in the housing,
said electrical plated-through hole comprising a top side partly coated by the light-scattering dielectric resist layer,
an underside situated opposite the top side of the electrical plated-through hole, and an electrical contact pad is configured at the top side of the electrical plated-through hole, the electrical contact pad being free of the light scattering dielectric resist layer and electrically connected to an electrical contact pad configured at the top side of the optoelectronic semiconductor component.

US Pat. No. 10,340,428

ELECTRO-OPTICAL DEVICE, METHOD FOR MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS

SEIKO EPSON CORPORATION, ...

1. An electro-optical device comprising:a light-emitting layer that has a first light-emitting element and a second light-emitting element adjacent to each other;
a color filter layer that has a first color filter provided corresponding to the first light-emitting element and a second color filter provided corresponding to the second light-emitting element;
a first resonator that has the first light-emitting element and enhances an intensity of light in a first wavelength region; and
a second resonator that has the second light-emitting element and enhances an intensity of light in a second wavelength region,
wherein the first color filter transmits light from the first resonator,
the second color filter transmits light from the second resonator,
an inter-element distance between the first light-emitting element and the second light-emitting element is 1.5 ?m or less, and
a thickness of layer between the light-emitting layer and the color filter layer is 6 times or less the inter-element distance.

US Pat. No. 10,340,426

PHOSPHOR AND ILLUMINATION DEVICE UTILIZING THE SAME

EPISTAR CORPORATION, Hsi...

1. A phosphor, having a composition of Sr1-xLiAl3N4:Ce3+x,wherein 0 wherein the phosphor has an excitation peak of 515 nm to 535 nm, a first emission peak of 560 nm to 580 nm, and a second emission peak of 610 nm to 630 nm.

US Pat. No. 10,340,425

LIGHT EMITTING DIODE HAVING LIGHT BLOCKING LAYER

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:a substrate comprising an upper surface and side surfaces;
a semiconductor stack disposed under the substrate and comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and
a light blocking layer covering the upper surface and the side surfaces of the substrate to define a light emitting surface on the upper surface of the substrate,
wherein the light emitting surface is divided into a plurality of regions by the light blocking layer.

US Pat. No. 10,340,424

LIGHT EMITTING DIODE COMPONENT

GE Lighting Solutions, LL...

23. A lighting device comprising: at least one solid state light emitter; and at least one luminescent element, said luminescent element comprising at least one luminescent material, said luminescent element being spaced from said solid state light emitter, said solid state light emitter having an illumination surface facing said luminescent element, said luminescent element having a luminescent element surface facing said solid state light emitter, said luminescent element surface being at least ten times as large as said illumination surface, said lighting device having a package efficiency of greater than 70%.

US Pat. No. 10,340,423

LIGHT-EMITTING DEVICE

EPISTAR CORPORATION, Hsi...

1. A light-emitting device, comprising:a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area;
a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is between 0 ?m and 10 ?m, and the second area of the reflective layer is not less than 80% of the first area of the second semiconductor layer;
a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer; and
a second contact part comprising a metal formed on the reflective layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer, and the second contact part comprises a second periphery surrounded by the first periphery of the first contact part from a top-view of the light-emitting device.

US Pat. No. 10,340,422

DISPLAY DEVICE AND DISPLAY PANEL

SHENZHEN CHINA STAR OPTOE...

1. A display device, comprising:a display device main body; and
a magnetic member disposed on the display device main body;
wherein the display device is assembled by the display device main body and the magnetic member, and is configured to be transferred to an array panel under force of a magnetic field outside of the display device, so that the display device and the array panel compose an LED display panel;
the magnetic member is disposed in at least one end of the display device main body; and
the magnetic member is configured to allow a predetermined portion of the display device to contact the array panel when the display device is transferred to the array panel.

US Pat. No. 10,340,421

LIGHT EMITTING DEVICE

MIKRO MESA TECHNOLOGY CO....

1. A light emitting device, comprising:a first type semiconductor layer comprising:
a plurality of low resistance portions; and
a high resistance portion, wherein the low resistance portions are isolated from one another by the high resistance portion;
a second type semiconductor layer;
an active layer present between the first type semiconductor layer and the second type semiconductor layer, the active layer comprising:
a first region; and
at least one second region, wherein a threading dislocation density of the first region is greater than a threading dislocation density of the second region, and a vertical projection of at least one of the low resistance portions on the active layer at least partially overlaps with the second region;
a plurality of first electrodes electrically connected to the low resistance portions respectively, wherein each of the first electrodes is electrically isolated from one another; and
a second electrode electrically connected to the second type semiconductor layer.

US Pat. No. 10,340,420

SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING A TRANSPARENT COVER LAYER TAIL PORTION

Samsung Electronics Co., ...

1. A semiconductor light-emitting device, comprisinga light-emitting structure including a first semiconductor layer, an active layer, and a second semiconductor layer;
a reflective electrode layer covering an upper surface of the second semiconductor layer; and
a transparent cover layer covering the upper surface of the second semiconductor layer and an upper surface of the reflective electrode layer, wherein the transparent cover layer includes a tail portion including a first portion and a second portion, the first portion covering an edge of the reflective electrode layer and a convex upper surface, the second portion being thinner than and extending from the first portion.

US Pat. No. 10,340,419

LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF

SAMSUNG DISPLAY CO., LTD....

1. A light emitting device, comprising:a substrate;
first and second electrodes spaced apart from each other on the substrate;
at least one bar-type LED having a first end on the first electrode and a second end on the second electrode, the at least one bar-type LED having a length greater than a diameter;
an insulative body between the substrate and the bar-type LED;
an insulating film surrounding at least a part of an outer circumferential surface of the bar-type LED and exposing opposite side surfaces of the first and second ends; and
first and second contact electrodes respectively disposed on the first and second ends of the bar-type LED,
wherein the first contact electrode is in contact with an upper surface of the first electrode and the side surface of the first end, and the second contact electrode is in contact with an upper surface of the second electrode and the side surface of the second end, and
wherein at least one of the first and second contact electrodes contacts the insulating film.

US Pat. No. 10,340,418

ULTRAVIOLET LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER

SEOUL VIOSYS CO., LTD., ...

1. A light emitting device comprising:a first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer;
an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
a current blocking layer disposed on the second conductivity-type semiconductor layer;
a transparent electrode layer covering the current blocking layer;
a first electrode electrically connected to the first conductivity-type semiconductor layer;
a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode comprising a second electrode pad and a second electrode extension extending from the second electrode pad; and an insulating layer disposed under the first electrode; and a first reflective layer interposed between the first electrode and the insulting layer;
a second reflective layer interposed between the second electrode and the transparent electrode layer and having a curved shape,
wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer; and
wherein the second reflective layer includes at least one recess indented into the curved shape.

US Pat. No. 10,340,417

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE PACKAGE, AND LIGHTING SYSTEM COMPRISING SAME

LG INNOTEK CO., LTD., Se...

1. A semiconductor device comprising:a substrate;
a buffer layer provided on the substrate;
a light emitting structure provided on the buffer layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer to emit ultraviolet light;
a plurality of air voids provided in the buffer layer; and
wherein each of the air voids has at least two inclined facets, which are different from each other based on the substrate,
wherein the at least two inclined facets of the air voids are provided to face the light emitting structure,
wherein the substrate includes a concavo-convex pattern, a portion of the buffer layer is provided in a concave pattern of the concavo-convex pattern, and the air voids are positioned above the portion of the buffer layer in the concave pattern, and
wherein the air voids are spaced apart from the concavo-convex pattern.

US Pat. No. 10,340,416

CRYSTAL SUBSTRATE, ULTRAVIOLET LIGHT-EMITTING DEVICE, AND MANUFACTURING METHODS THEREFOR

RIKEN, Saitama (JP)

1. A method for manufacturing a crystal substrate of a non-polar orientation comprising the steps of:providing a sapphire crystal plate of an r-plane orientation; and
forming a buffer layer of an AlN buffer layer, so that the AlN buffer layer covers at least a part of a surface of the sapphire crystal plate, the AlN buffer layer being an epitaxially grown layer of AlN crystal of a non-polar orientation,
wherein the step of forming a buffer layer includes the steps of:
forming a surface protection layer directly on the part of the surface of the sapphire crystal plate by epitaxially growing a surface protection layer that suppresses roughness on a surface of the AlN buffer layer; and
smoothing by epitaxially growing a smoothing layer on or over the surface protection layer for providing a surface of the AlN buffer with a smoothed upper surface,
wherein the step of forming the surface protection layer is carried out by an MOCVD method at a growth temperature that is below a temperature at which a surface of the r-plane of the sapphire crystal plate may be roughened,
wherein the step of smoothing is carried out by an MOCVD method at a growth temperature that reaches or exceeds a temperature necessary for smoothing, and
wherein the temperature necessary for smoothing is above the growth temperature for the step of forming the surface protection layer and is above 1400° C.

US Pat. No. 10,340,415

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PACKAGE INCLUDING THE SAME

LG Innotek Co., Ltd., Se...

1. A semiconductor device comprising:a light emitting structure that comprises:
a first conductivity type semiconductor layer having aluminum;
a second conductivity type semiconductor layer having aluminum; and
an active layer having aluminum and provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer,
wherein:
when primary ions are bombarded on the light emitting structure to sputter away secondary ions of aluminum from the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer, secondary ions of aluminum are produced in respective intensities for the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer,
an intensity of the secondary ions of aluminum comprises a maximum intensity in the light emitting structure, a minimum intensity in the light emitting structure, a second intensity which is the smallest intensity in a region spaced away from the maximum intensity in a first direction, and a first peak intensity spaced away from the maximum intensity which is the greatest peak intensity in a region disposed between the maximum intensity and the second intensity,
wherein the maximum intensity is spaced away from the minimum intensity in the first direction, and the first peak intensity is spaced away from the maximum intensity in the first direction,
wherein the first conductivity type semiconductor layer includes a first region having the intensity of the secondary ions be between the first peak intensity and the second intensity, the second conductivity type semiconductor layer includes a second region having the intensity of the secondary ions be between the maximum intensity and the minimum intensity, and the active layer includes a third region having the intensity of the secondary ions be between the maximum intensity and the first peak intensity,
wherein the first direction is a thickness direction of the light emitting structure from the second conductivity type semiconductor layer towards the first conductivity type semiconductor layer,
wherein a first intensity difference (D1) between the maximum intensity and the second intensity is greater than a second intensity difference (D2) between the minimum intensity and the second intensity.

US Pat. No. 10,340,414

LIGHT EMITTING DIODE DEVICE AND METHOD FOR THE SAME

Samsung Display Co., Ltd....

1. A light emitting device comprising:a substrate;
a first electrode and a second electrode at a distance from each other on the substrate and disposed on a same layer;
a plurality of light emitting diodes electrically connected to the first electrode and the second electrode; and
a pattern between at least one of the plurality of light emitting diodes and the substrate.

US Pat. No. 10,340,413

SEMICONDUCTOR LIGHT EMITTING ELEMENT

NICHIA CORPORATION, Anan...

1. A semiconductor light emitting element comprising:a substrate having a first main surface, a second main surface opposite to said first main surface and a first altered area defined partially between said first main surface and said second main surface in a thickness direction of said substrate, said first altered area having first voids positioned at a first imaginary line in said first altered area and second voids positioned at a second imaginary line different from the first imaginary line; and
a semiconductor structure provided on or above the first main surface of the substrate,
wherein the first altered area is a brittle portion around the first imaginary line,
wherein the second imaginary line is spaced at a distance of 5 ?m or more away from the first imaginary line and within said first altered area,
wherein the width of the first altered area is within the range between 15 and 35 ?m, and
wherein the first altered area is provided in a first half of the substrate in the thickness direction that includes the second main surface, and no additional altered area is provided in a second half of the substrate in the thickness direction that includes the first main surface.

US Pat. No. 10,340,412

SOLAR CELL

LG ELECTRONICS INC., Seo...

13. A solar cell module comprising:a plurality of solar cells, each of the plurality of solar cells comprising a photoelectric conversion layer, and an electrode on the photoelectric conversion layer;
an interconnector to electrically connect the electrodes of the plurality of solar cells;
a sealing film to seal the plurality of solar cells;
a front substrate disposed on front surfaces of the plurality of solar cells; and
a rear substrate disposed on rear surfaces of the plurality of solar cells,
wherein the electrode comprises:
at least one first finger electrode;
a plurality of second finger electrodes;
a bus electrode directly connected to the at least one first finger electrode;
a plurality of connecting electrodes connected to at least one of the plurality of second finger electrodes, the plurality of connecting electrodes forming a space therebetween; and
an auxiliary electrode formed at the space or between at least two connecting electrodes of the plurality of connecting electrodes,
the plurality of connecting electrodes extend in a first direction,
the bus electrode extends in a second direction,
the at least one first finger electrode and the plurality of second finger electrodes extend in a third direction,
the second direction intersects the first and third directions,
the plurality of connecting electrodes have a width that is smaller than a width of the bus electrode, and
the at least two connecting electrodes are directly connected to the bus electrode.

US Pat. No. 10,340,411

INSTALLATION FOR TREATING A MATERIAL

EISENMANN SE, Boeblingen...

1. An installation for treating a material comprising:a) a housing which delimits a treatment chamber, the housing comprising an envelope which separates an atmosphere which is present inside the envelope from an atmosphere which is present outside said envelope, wherein the atmosphere inside the envelope is a controlled atmosphere;
b) at least one supporting roller, which is arranged at least partly inside the treatment chamber, for conveying a material;
c) at least one mounting apparatus which is arranged outside the housing, the at least one mounting apparatus being associated with a wall of the housing, the at least one supporting roller being mounted by the at least one mounting apparatus;
wherein
d) a flexible compensating element is provided and extends between the at least one mounting apparatus and the wall of the housing associated with the at least one mounting apparatus,
da) a flange connected to a first end of the flexible compensating element, and
db) a second end of the flexible compensating element having a sealing arrangement connected thereto, the sealing arrangement extending between the second end of the flexible compensating element and the at least one mounting apparatus and separating the at least one mounting apparatus from the atmosphere which is present inside the envelope.

US Pat. No. 10,340,410

OPTOCOUPLER FOR THE CONTROL OF HIGH VOLTAGE

HARRIS CORPORATION, Melb...

1. A method of manufacturing an optocoupler comprising:positioning a body of a light source into a first mold such that electrical leads of the light source protrude from the first mold;
positioning a diode stack of a light detector into the first mold such that metal end caps and electrical leads of the light detector protrude from the first mold;
pouring optically transparent material into the first mold to create an optical cavity enclosing the body of the light source and the diode stack of the light detector; and
disposing a coating of optically reflective material over the optical cavity to form a reflective layer.

US Pat. No. 10,340,406

DISTRIBUTED PHOTODIODE WITH BUILT-IN EQUALIZATION

Purdue Research Foundatio...

1. A distributed photodiode comprising:n photodiode segments, wherein a junction capacitance of the photodiode segments contributes in forming a transmission line, wherein n is an integer greater than 2;
n+1 inductors for forming the transmission line, the inductors connected between the photodiode segments, wherein the n+1 inductors are connected in series; and
a biasing capacitor and a biasing resistor both connected to an anode or cathode of the n photodiode segments.

US Pat. No. 10,340,405

TUNNEL HETEROJUNCTIONS IN GROUP IV/GROUP II-IV MULTIJUNCTION SOLAR CELLS

EPIR Technologies, Inc., ...

1. A photovoltaic cell, comprising:a first subcell formed by an epitaxial growth process of a single crystal Group IV semiconductor material and having a first upper surface;
a tunnel heterojunction including
a first layer comprising a single crystal Group IV semiconductor material, the first layer having a first conductivity type and formed by an epitaxial growth process on the first upper surface of the first subcell, the first layer forming one side of the tunnel heterojunction, the first layer having a second upper surface; and
a second layer comprising a single crystal Group II-VI semiconductor material, the second layer having a second conductivity type opposite the first conductivity type, the second layer formed by an epitaxial growth process on the second upper surface of the first layer, the second layer forming the other side of the tunnel heterojunction, and having a third upper surface; and
a second subcell formed by an epitaxial growth process on the third upper surface of the second layer, the second subcell formed of a single crystal Group II-VI semiconductor material.

US Pat. No. 10,340,388

INTERMEDIATE SEMICONDUCTOR DEVICE HAVING AN ALIPHATIC POLYCARBONATE LAYER

Japan Advanced Institute ...

1. An intermediate semiconductor device comprising:a semiconductor layer; and
an aliphatic polycarbonate layer that covers a portion of the semiconductor layer, the aliphatic polycarbonate layer comprising a dopant.

US Pat. No. 10,340,358

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

SAMSUNG ELECTRONICS CO., ...

1. A semiconductor device comprising:a substrate;
a first active pattern disposed on the substrate and spaced apart from the substrate;
a gate insulating film which surrounds the first active pattern;
a first work function adjustment film which surrounds the gate insulating film and comprises carbon; and
a first barrier film which surrounds the first work function adjustment film,
wherein a carbon concentration of the first work function adjustment film increases as it goes away from the first barrier film.

US Pat. No. 10,340,357

DISHING PREVENTION DUMMY STRUCTURES FOR SEMICONDUCTOR DEVICES

Taiwan Semiconductor Manu...

1. An integrated circuit (IC) comprising:an inner ring-shaped isolation structure disposed in a semiconductor substrate, wherein the inner ring-shaped isolation structure demarcates a device region;
an inner ring-shaped well disposed in the semiconductor substrate and surrounding the inner ring-shaped isolation structure;
an outer ring-shaped isolation structure disposed in the semiconductor substrate and surrounding the inner ring-shaped well;
an outer ring-shaped well disposed in the semiconductor substrate and surrounding the outer ring-shaped isolation structure; and
a plurality of dummy gates arranged over both the inner ring-shaped well and the outer ring-shaped isolation structure, wherein the plurality of dummy gates are disposed in an interlayer dielectric (ILD) layer.

US Pat. No. 10,340,348

METHOD OF MANUFACTURING FINFETS WITH SELF-ALIGN CONTACTS

TAIWAN SEMICONDUCTOR MANU...

1. A method of manufacturing a semiconductor device, comprising:forming a first fin structure and a second fin structure over a substrate, the first and second fin structures extending in a first direction and being arranged in a second direction crossing the first direction, the first fin structure being arranged in parallel with the second fin structure;
forming an isolation insulating layer over the substrate such that upper portions of the first and second fin structures are exposed from the isolation insulating layer;
forming a first gate structure and a second gate structure over parts of the first and second fin structures, the first and second gate structures extending in the second direction and being arranged in the first direction in parallel with each other;
forming an interlayer dielectric layer made of a silicon oxide based material on the first and second gate structures and over the first and second fin structures;
forming a first mask pattern having a first opening over the interlayer dielectric layer, the first opening being located above the first and second gate structures; and
cutting the first and second gate structures through the first opening of the first mask pattern, wherein:
the method further comprises:
etching the isolation insulating layer and the interlayer dielectric layer through the first opening so as to form a first recess;
forming an insulating layer in the first recess;
forming a second mask pattern having a second opening so as to expose a part of the insulating layer in the first recess and a part of the interlayer dielectric layer;
etching the exposed part of the interlayer dielectric layer through the second opening so as to form a second recess; and
forming a conductive material in the second recess, and
the second mask pattern has a third opening so as to expose a part of the insulating layer outside the first recess,
in the etching the exposed part of the interlayer dielectric layer through the second opening, the part of the insulating layer outside the first recess is etched so as to form a third recess, and
in the forming the conductive material in the second recess, the conductive material is also formed in the third recess.

US Pat. No. 10,340,347

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

PANASONIC INTELLECTUAL PR...

1. A semiconductor device in a face-down, chip-size package, including: a semiconductor substrate that is rectangular and includes an impurity of a first conductivity type; a low-concentration impurity layer that is in contact with a top surface of the semiconductor substrate and includes an impurity of the first conductivity type in a lower concentration than a concentration of the impurity of the first conductivity type included in the semiconductor substrate; and a metal layer that is in contact with an entire bottom surface of the semiconductor substrate and includes only a metal material, the semiconductor device having a curvature at room temperature that curves in a lengthwise direction of the semiconductor substrate, the semiconductor device comprising:a first vertical metal oxide semiconductor (MOS) transistor in a first region of the low-concentration impurity layer; and
a second vertical MOS transistor in a second region of the low-concentration impurity layer adjacent to the first region,
wherein the first vertical MOS transistor includes, on a surface of the low-concentration impurity layer, a first gate electrode and a plurality of first source electrodes,
the second vertical MOS transistor includes, on the surface of the low-concentration impurity layer, a second gate electrode and a plurality of second source electrodes,
the semiconductor substrate acts as a common drain region for a first drain region of the first vertical MOS transistor and a second drain region of the second vertical MOS transistor,
a bidirectional channel from the plurality of first source electrodes to the plurality of second source electrodes via the first drain region, the metal layer, and the second drain region is a principal current channel,
in a plan view of the semiconductor substrate, the first gate electrode is arranged with no other electrode disposed between the first gate electrode and a first short side of the semiconductor substrate,
the plurality of first source electrodes include a plurality of first source electrodes that are approximately rectangular in a plan view of the semiconductor substrate,
in a plan view of the semiconductor substrate, the plurality of first source electrodes that are approximately rectangular are arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate,
in a plan view of the semiconductor substrate, the second gate electrode is arranged with no other electrode disposed between the second gate electrode and a second short side of the semiconductor substrate,
the plurality of second source electrodes include a plurality of second source electrodes that are approximately rectangular in a plan view of the semiconductor substrate,
in a plan view of the semiconductor substrate, the plurality of second source electrodes that are approximately rectangular are arranged in stripes extending parallel to the lengthwise direction of the semiconductor substrate,
in a plan view of the semiconductor substrate, a boundary line between the first region and the second region is an approximate line segment, and
in a plan view of the semiconductor substrate, the first gate electrode and the second gate electrode are symmetrical to one another with respect to the boundary line, and the plurality of first source electrodes and the plurality of second source electrodes are symmetrical to one another with respect to the boundary line.

US Pat. No. 10,340,327

DISPLAY DEVICE

Japan Display Inc., Mina...

1. A display device comprising:a base material containing resin and including a display region and a bent region, the display region including a plurality of pixels;
a resin layer disposed on one side of the base material, wherein
an exposed section where a surface of the resin layer on a side opposite to a side on which the base material is disposed is exposed is formed in at least the bent region, and
the resin layer includes, in the exposed section, a first resin layer and a second resin layer whose hydrophilicity is lower than that of the first resin layer, in this order from the base material side; and
a component provided on the side of the base material on which the resin layer is disposed, wherein the component is covered by the second resin layer.

US Pat. No. 10,340,326

FLEXIBLE DISPLAY APPARATUS HAVING A BENDING AREA CUTOUT

Shanghai Tianma Micro-Ele...

1. A flexible display apparatus, comprising:a flexible substrate including a bending area;
an insulating layer formed on the flexible substrate and including at least one cutout at the bending area; and
a plurality of wires configured following a surface shape of the insulating layer at the bending area,
wherein the at least one cutout includes sloped sidewalls protruding away from the flexible substrate.

US Pat. No. 10,340,325

FLEXIBLE DISPLAY HAVING A HIGH STRAIN RATE

SAMSUNG DISPLAY CO., LTD....

1. A display device, comprising:a substrate; and
a plurality f first display layers formed on an upper surface of the substrate,
wherein the substrate includes a plurality of upper grooves, each of which defines a first opening formed only in the upper surface and a plurality of lower grooves, each of which defines a second opening formed only in a lower surface of the substrate,
wherein the upper grooves and the lower grooves are alternately arranged,
wherein the upper grooves are positioned between the plurality first display layers,
wherein the thickness of the substrate is greater than the depth of each of the upper grooves, and
wherein the first display layer includes an organic emission layer.

US Pat. No. 10,340,323

DOUBLE-SIDED OLED DISPLAY DEVICE

SHENZHEN CHINA STAR OPTOE...

1. A double-sided organic light-emitting diode (OLEM) display device, comprising a plurality of pixels arranged in an array, a thin-film transistor (TFT) backplate, a pixel definition layer arranged on the TFT backplate, and a polarizer attached to an undersurface of the TFT backplate, and the pixel definition layer comprises a first pixel definition hole and a second pixel definition hole, the top-emission (OLED being received in the first pixel definition hole and arranged on the TFT backplate, the bottom-emission OLED being received in the second pixel definition hole and arranged on the TFT backplate; and a portion of the TFT backplate that corresponds to the second OLED emissive layer is transparent and light transmitting, each of the pixels comprising a plurality of sub-pixels that are arranged in sequence, each of the sub-pixels comprising an OLED:wherein the pixels located in one row of the array or the pixels located in one, column of the array collectively form a displaying section, and for two adjacent ones of the displaying sections, the OLEDs of the pixels of one of the displaying sections are top-emission OLEDs, and the OLEDs of the pixels of the other one of the displaying sections are bottom-emission OLEDs;
wherein the top-emission OLED comprises a first anode, a first OLED emissive layer arranged on the first anode, and a transparent cathode set on and covering the first OLED emissive layer; and
the bottom-emission OLED comprises a second anode, a second OLED emissive layer arranged on the second anode, and a non-transparent cathode set on and covering the second OLED emissive layer.

US Pat. No. 10,340,322

DISPLAY DEVICE AND ORGANIC LIGHT EMITTING DIODE (OLED) DISPLAY PANEL

SHENZHEN CHINA STAR OPTOE...

1. A display device, comprising:a substrate;
a first buffer layer formed on the substrate;
an insulating layer formed on the first buffer layer;
a first metal layer formed on a surface of the insulating layer, wherein the first metal layer is a first electrode of a storage capacitor of the display device;
at least one inorganic film layer formed on a surface of the first metal layer;
a conducting layer formed on a surface of the inorganic film layer;
a second metal layer formed on a surface of the conducting layer, wherein the second metal layer is a second electrode of the storage capacitor; and
an organic light emitting diode (OLED) layer;
wherein the storage capacitor comprises an opening formed in a pixel defining layer and a flattening layer corresponding to the first metal layer, the conducting layer and the second metal layer are formed in the opening and on the inorganic film layer, the first metal layer is a part of a source and drain electrode metal layer of a switching area of a thin film transistor, the inorganic film layer is a passivation layer, the conducting layer is an electron transporting layer of the OLED layer, and the second metal layer is a cathode layer of the OLED layer.

US Pat. No. 10,340,321

ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS, AND METHOD OF DRIVING ELECTRO-OPTICAL DEVICE

SEIKO EPSON CORPORATION, ...

1. An electro-optical device comprising:a first conductive layer;
a second conductive layer;
a third conductive layer;
a first capacitor that includes a fourth conductive layer which is coupled to the second conductive layer, a fifth conductive layer which is coupled to the third conductive layer, and a dielectric film between the fourth conductive layer and the fifth conductive layer;
a sixth conductive layer;
a second capacitor that is formed between the second conductive layer and the sixth conductive layer; and
a pixel circuit that is provided in correspondence with the third conductive layer and the first conductive layer,
wherein the pixel circuit includes a plurality of transistors including a drive transistor, and a light emitting element,
wherein the second conductive layer and the sixth conductive layer are formed in a same layer,
wherein the fourth conductive layer of the first capacitor is formed in a different layer from the second conductive layer, and
wherein the fifth conductive layer of the first capacitor is formed in a different layer from the fourth conductive layer,
wherein the first capacitor and the second capacitor are located in a display region.

US Pat. No. 10,340,320

SUBSTRATE FOR DISPLAY DEVICE AND DISPLAY DEVICE INCLUDING THE SAME

LG Display Co., Ltd., Se...

1. A display device comprising:a substrate;
a pixel on the substrate, the pixel including:
a first thin-film transistor (TFT) on the substrate, the first TFT including:
a first gate electrode,
at least a first part of a first interlayer insulation film on the first gate electrode,
a second interlayer insulation film on the first interlayer insulation film,
a first gate insulation film on the first part of the second interlayer insulation film, and
a first active layer formed of oxide semiconductor on the first gate insulation film;
a second TFT on the substrate, the second TFT including:
a second active layer formed of polycrystalline silicon,
at least a first part of a second gate insulation film on the second active layer, and
a second gate electrode on the first part of the second gate insulation film,
wherein the first interlayer insulation film, the second interlayer insulation film, and the second gate insulation film are between the first active layer and the second active layer;
a storage capacitor on the substrate, the storage capacitor including:
a first storage electrode,
at least a second part of the second interlayer insulation film on the first storage electrode, and
a second storage electrode on the second part of the second interlayer insulation film, wherein the second storage electrode is physically separated from the first gate insulation film; and
a light-emitting device electrically connected to the storage capacitor.

US Pat. No. 10,340,319

ORGANIC LIGHT-EMITTING DEVICE HAVING A COLOR FILTER

Semiconductor Energy Labo...

1. An active matrix organic light-emitting device, comprising:a substrate;
a black matrix formed above a part of the substrate;
at least one transistor formed above the substrate;
a barrier film formed above and entirely covering a gate electrode and a semiconductor layer of the at least one transistor;
a planarization film formed above the barrier film;
a color filter formed on an upper part of the planarization film opposite to a position where the at least one transistor is formed; and
an organic light-emitting element formed above the color filter.

US Pat. No. 10,340,318

DISPLAY DEVICE HAVING BANK WITH GROOVE PORTION AND PIXEL DEFINITION PORTION

LG DISPLAY CO., LTD., Se...

1. A display device comprising:a flexible substrate;
a thin film transistor disposed on the flexible substrate;
a first electrode connected to the thin film transistor;
a bank layer including a pixel definition portion exposing the first electrode and a groove portion spaced apart from the pixel definition portion;
an organic layer disposed on the first electrode and the bank layer; and
a second electrode disposed on the organic layer.

US Pat. No. 10,340,317

ORGANIC LIGHT EMITTING DISPLAY HAVING TOUCH SENSOR AND METHOD OF FABRICATING THE SAME

LG Display Co., Ltd., Se...

1. An organic light emitting display comprising:light emitting elements disposed on an active area of a substrate;
an encapsulation unit disposed on the light emitting elements;
a touch sensor disposed on the encapsulation unit, the touch sensor including a touch sensing line and a touch driving line, wherein the touch driving line comprises first touch electrodes, and the touch sensing line comprises second touch electrodes;
routing lines connected to the touch sensor;
a touch pad disposed on a pad area of the substrate and connected to the touch sensor, the touch pad comprising:
a pad electrode on a same layer as a source electrode and a drain electrode of a thin film transistor on the substrate, the pad electrode connected to one of the routing lines and made of a same material as at least one of the routing lines or the source electrode and the drain electrode of the thin film transistor; and
a pad cover electrode on the pad electrode, the pad cover electrode made of a same material as at least one of the first touch electrodes or the second touch electrodes;
at least one dam disposed between the active area and the pad area, wherein the routing lines are above and overlap the at least one dam; and
a compensation film disposed between the light emitting elements and the routing lines and overlapping at least a part of the at least one dam,
wherein the compensation film has different thicknesses between a region above the at least one dam and a region between the at least one dam and the light emitting elements.

US Pat. No. 10,340,316

DISPLAY DEVICE UTILIZING PIXEL AND DUMMY PORTIONS

Samsung Display Co., Ltd....

1. A display device comprising:a first substrate;
a second substrate comprising a pixel portion configured to display an image, and a dummy portion spaced from the pixel portion, a side of the dummy portion being exposed to the outside; and
an interlayer between the first substrate and both of the pixel and dummy portions of the second substrate,
wherein the pixel portion and the dummy portion each comprise multiple layers, and at least one layer of the pixel portion and at least one layer of the dummy portion comprise a same material, the multiple layers of the dummy portion comprising a dummy sealing layer, a dummy insulating layer, and a dummy electrode layer between the dummy sealing layer and the dummy insulating layer,
wherein the second substrate further has a region on an upper surface of the second substrate defined by a spacing between the pixel portion and the dummy portion,
wherein the upper surface of the second substrate is exposed in the region of the second substrate,
wherein the interlayer is between the first substrate and the upper surface of the second substrate exposed in the region, and
wherein the upper surface of the second substrate exposed in the region is in direct contact with the interlayer.

US Pat. No. 10,340,315

ORGANIC LIGHT EMITTING DISPLAY WITH COLOR FILTER LAYERS

Samsung Display Co., Ltd....

1. An organic light emitting display device, comprising:first to fourth electrodes spaced apart from each other on a base surface;
a fifth electrode spaced apart from the first to fourth electrodes in a normal direction of the base surface;
a first light emitter between the first to fourth electrodes and the fifth electrode and overlapping the first to fourth electrodes;
a second light emitter between at least one of the first and second electrodes and the fifth electrode, overlapping at least one of the first and second electrodes and not overlapping the third electrode and the fourth electrode;
a third light emitter between at least one of the third and fourth electrodes and the fifth electrode, overlapping at least one of the third and fourth electrodes, and not overlapping the first electrode, the second electrode, and the second light emitter;
a charge generating layer between the first and second light emitters and between the first and third light emitters; and
a color filter layer including a first color filter to transmit light from the first light emitter in a first wavelength range having a peak value in a range of about 400 nm to about 500 nm, a second color filter to transmit from the second light emitter in a second wavelength range having a peak value in a range of about 500 nm to about 600 nm, and a third color filter to transmit light from the third light emitter in a third wavelength range having a peak value in a range of about 600 nm to about 700 nm.

US Pat. No. 10,340,313

NON-COMMON CAPPING LAYER ON AN ORGANIC DEVICE

Universal Display Corpora...

1. An apparatus comprising:a plurality of OLEDs provided on a first substrate, wherein each OLED comprises:
a first electrode;
a second electrode disposed over the first electrode; and
an organic electroluminescent (EL) material disposed between the first and the second electrodes, wherein the plurality of OLEDs comprising a first portion and a second portion;
a first capping layer disposed over the plurality of OLEDs, wherein a first portion of the first capping layer is disposed over at least the first portion of the plurality of OLEDs and a second portion of the first capping layer is disposed over the second portion of the plurality of OLEDs, wherein the first capping layer and the second electrode are in contact with each other throughout the first and second portions of the first capping layer, such that the first capping layer is optically coupled to at least the first portion and the second portion of the plurality of OLEDs,
wherein substantially all of the light emitting from the first portion and the second portion of the plurality of OLEDs in a direction perpendicular to the second electrode propagates through the first capping layer,
wherein the first capping layer is the only capping layer over the first portion of the plurality of OLEDs and has a first optical thickness that is between 90-130 nm;
a second capping layer disposed over the second portion of the plurality of OLEDs and in contact with the first capping layer throughout the second portion of the first capping layer, such that the second capping layer is optically coupled to the first capping layer and the second portion of the plurality of OLEDs but not the first portion of the plurality of OLEDs,
wherein substantially all of the light emitting from the second portion of the plurality of OLEDs in a direction perpendicular to the second electrode and propagating through the first capping layer also propagates through the second capping layer,
wherein the first capping layer and the second capping layer are the only capping layers over the second portion of the plurality of OLEDs and in combination have a second optical thickness between 125-200 nm that is different from the first optical thickness; and
wherein the second portion of the plurality of OLEDs emits light of different wavelength from the first portion when a driving voltage is applied across the first and second electrodes and the first capping layer having the first optical thickness enhances the amount of light outcoupled from the first portion and the first and second capping layer having the second optical thickness enhance the amount of light outcoupled from the second portion;
wherein the plurality of OLEDs further comprises a third portion of the plurality of OLEDs that is different from the first and second portions of the plurality of OLEDs, wherein the second electrode and a third portion of the first capping layer extend over the third portion of the plurality of OLEDs, wherein the second electrode is in contact with the first capping layer throughout the third portion of the first capping layer such that the first capping layer is also optically coupled to the third portion of the plurality of OLEDs, the apparatus further comprising:
a third capping layer disposed over the third portion of the plurality of OLEDs and in contact with the first capping layer throughout the third portion of the first capping layer such that the third capping layer is optically coupled to the first capping layer and the third portion of the plurality of OLEDs, wherein substantially all of the light emitting from the third portion of the plurality of OLEDs in a direction perpendicular to the second electrode and propagating through the first capping layer also propagates through the third capping layer; wherein the first capping layer and the third capping layer are the only capping layers over the third portion of the plurality of OLEDs and in combination have a third optical thickness between 125-200 nm that is different from the first optical thickness and the second optical thickness; and
wherein the third portion of the plurality of OLEDs emits light of different wavelength from the first portion and the second portion when a driving voltage is applied across the first and second electrodes and the first and the third capping layers having the third optical thickness enhances the amount of light outcoupled from the third portion.

US Pat. No. 10,340,312

MEMORY ELEMENT WITH A REACTIVE METAL LAYER

Hefei Reliance Memory Lim...

1. A re-writeable non-volatile memory device, comprising:a re-writeable non-volatile two-terminal memory element (ME) comprising:
a first terminal,
a second terminal,
a first layer, and
a second layer of reactive metal in direct contact with the first layer, the second layer and the first layer operative to store at least one-bit of data as a state of the re-writable non-volatile two-terminal ME.

US Pat. No. 10,340,311

MAGNETORESISTIVE EFFECT ELEMENT WITH MAGNETIC LAYERS AND MAGNETIC MEMORY

Toshiba Memory Corporatio...

1. A magnetoresistive effect element comprising:a first magnetic layer;
a nonmagnetic layer provided on the first magnetic layer;
a second magnetic layer provided on the nonmagnetic layer;
a first insulating layer provided at least on a side surface of the second magnetic layer;
a second insulating layer covering at least a part of the first insulating layer;
a conductive layer provided between the first insulating layer and the second insulating layer; and
an electrode including a first portion on the second magnetic layer and a second portion on a side surface of the second insulating layer,
wherein a height of a lower surface of the second portion of the electrode is equal to or less than a height of an upper surface of the conductive layer,
a height of an upper surface of the first insulating layer is greater than a height of an upper surface of the second magnetic layer, and
the second insulating layer is provided between the first insulating layer and the first portion of the electrode to be in contact with the upper surface of the second magnetic layer.

US Pat. No. 10,340,309

LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A method of forming a light emitting device, the method comprising:forming a first light emitting cell comprising:
disposing a first lower semiconductor layer on a base substrate;
disposing a first active layer on the first lower semiconductor layer;
disposing a first upper semiconductor layer on the first active layer;
forming a first inclined surface comprising a first surface of the first upper semiconductor layer and a first surface of the first active layer; and
removing a portion of the first upper semiconductor layer and a portion of the first active layer to expose the first lower semiconductor layer;
forming a second light emitting cell comprising:
disposing a second lower semiconductor layer on the base substrate;
disposing a second active layer on the second lower semiconductor layer;
disposing a second upper semiconductor layer on the second active layer;
forming a second inclined surface comprising a first surface of the second upper semiconductor layer and a first surface of the second active layer; and
removing a portion of the second upper semiconductor layer and a portion of the second active layer to expose the second lower semiconductor layer;
disposing a first conductive material on the second upper semiconductor layer;
disposing a first insulation layer on the first lower semiconductor layer, the second lower semiconductor layer, the second active layer, and the second upper semiconductor layer;
disposing a second conductive material on the first insulation layer configured to electrically couple the first light emitting cell and the second light emitting cell; and
disposing a second insulation layer on the second conductive material,
wherein the first inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane of the base substrate,
wherein the second inclined surface is continuous and has a slope of approximately 20° to approximately 80° from the horizontal plane of the base substrate, and
wherein the first insulation layer and the second insulation layer comprise a light transmitting material.

US Pat. No. 10,340,308

DEVICE WITH MULTIPLE VERTICALLY SEPARATED TERMINALS AND METHODS FOR MAKING THE SAME

X Development LLC, Mount...

1. A light emitting device, comprising:a plurality of light emitting elements arranged at different locations in a common plane, each light emitting element comprising:
at least one layer of a semiconductor material;
a first electrical terminal for providing charge carriers to a first portion of the light emitting element, the first electrical terminal being located at a first location along an axis perpendicular to the common plane;
a second electrical terminal for providing charge carriers to a second portion of the light emitting element, the second electrical terminal being located at a second location along the axis perpendicular to the common plane different from the first location; and
a third electrical terminal for providing charge carriers to a third portion of the light emitting element, the third electrical terminal being located at a third location along the axis perpendicular to the common plane different from the first and second locations;
a first electrode layer comprising one or more electrodes each being in electrical contact with the first electrical terminal of one or more of the plurality of light emitting elements;
a second electrode layer comprising one or more electrodes each being in electrical contact with the second electrical terminal of one or more of the plurality of light emitting elements;
a third electrode layer comprising one or more electrodes each being in electrical contact with the third electrical terminal of one or more of the plurality of light emitting elements;
a first electrically insulating layer disposed between the plurality of light emitting elements and also disposed between the first and second electrode layers along the axis perpendicular to the common plane; and
a second electrically insulating layer disposed between the plurality of light emitting elements and also disposed between the second and third electrode layers along the axis perpendicular to the common plane.

US Pat. No. 10,340,307

LIGHT EMITTING DIODE HAVING CURRENT CONFINEMENT STRUCTURE

MIKRO MESA TECHNOLOGY CO....

1. A light-emitting diode (LED), comprising:a first type semiconductor layer comprising a first low resistance portion, at least one second low resistance portion, and a high resistance portion, wherein the high resistance portion is between the first low resistance portion and the second low resistance portion, and a resistivity of the first type semiconductor layer increases from the first low resistance portion toward the high resistance portion and decreases from the high resistance portion toward the second low resistance portion, wherein the first low resistance portion has a top surface, a bottom surface, and an outer periphery between the top surface and the bottom surface, and the outer periphery of the first low resistance portion is enclosed by the high resistance portion;
a first electrode electrically connected to the first low resistance portion and substantially no current flowing between the first electrode and the second low resistance portion, wherein the high resistance portion is configured to confine charge carriers substantially within the first low resistance portion;
a second type semiconductor layer, wherein at least a portion of the first type semiconductor layer is between the first electrode and the second type semiconductor layer; and
a second electrode electrically connected to the second type semiconductor layer.

US Pat. No. 10,340,306

SEMICONDUCTOR PACKAGE WITH CHAMFERED CORNERS AND RELATED METHODS

SEMICONDUCTOR COMPONENTS ...

1. A method for forming an image sensor device, comprising:forming a first plurality of openings in an optically transmissive cover;
coupling the optically transmissive cover to a wafer comprising a plurality of die;
etching a second plurality of openings through the wafer, the second plurality of openings aligning with the first plurality of openings in the optically transmissive cover; and
singulating the optically transmissive cover and the wafer into a plurality of image sensor devices, wherein each image sensor device includes one of a rounded corner or a chamfered corner edge.

US Pat. No. 10,340,305

IMAGE SENSOR AND IMAGE SENSOR PIXEL HAVING JFET SOURCE FOLLOWER

DARTMOUTH COLLEGE, Hanov...

1. An image sensor comprising a plurality of pixels, at least one pixel comprising:a floating diffusion region formed in a semiconductor substrate;
a transfer gate configured to selectively cause transfer of photocharge stored in the pixel to the floating diffusion;
a JFET having (i) a source and a drain coupled by a channel region, and (ii) a gate comprising the floating diffusion region; and
wherein the channel region comprises a first doped region of a first conductivity type configured to conduct current between the source and drain along a lateral direction substantially parallel to a surface of the substrate, the floating diffusion region comprises a second doped region of a second conductivity type opposite to the first conductivity type, and wherein the second doped region of the floating diffusion is disposed adjacent to and beneath the first doped region along the lateral direction between the source and drain.

US Pat. No. 10,340,304

CMOS IMAGE SENSOR

SEMICONDUCTOR MANUFACTURI...

1. A CMOS image sensor, comprising:a substrate having a first region and a second region connecting with the first region at a first end of the first region;
a transfer transistor formed on the surface of the substrate in the second region;
a floating diffusion (FD) region formed in the surface of the substrate at one side of the transfer transistor in the second region;
a third implanting region formed in the surface of the substrate in the first region, being formed from a first implanting region;
a second implanting region and an adjacent fifth implanting region formed under the third implanting region; and
a fourth implanting region formed under the second implanting region and the fifth implanting region, being electrically connected with the third implanting region by the fifth implanting region, wherein the third implanting region and the fourth implanting region have side surfaces coinciding with an edge of the transfer transistor.

US Pat. No. 10,340,303

METHOD AND APPARATUS FOR BACKSIDE ILLUMINATION SENSOR

SEMICONDUCTOR MANUFACTURI...

1. A semiconductor device, comprising;a device substrate including a dielectric layer and a metal wire in the dielectric layer;
a first opening over the metal wire, the first opening having a bottom at a depth the same as an upper surface of the metal wire; and
a first insulation layer including a first color filter material on sidewalls of the first opening.

US Pat. No. 10,340,302

COMPACT SENSOR MODULE

Analog Devices, Inc., No...

1. A sensor module for an imaging system, the sensor module comprising:a sensor substrate;
an imaging sensor die mounted on the sensor substrate, the imaging sensor die comprising a plurality of pixels on a front side of the imaging sensor die; and
a support structure disposed behind the imaging sensor die, the support structure comprising a back side that faces away from the front side of the imaging sensor die,
the support structure comprising an alignment feature on the back side of the support structure, the support structure having a planar portion that is generally parallel to the imaging sensor die, the support structure providing mechanical support to the sensor module, the alignment feature positioned at a fixed displacement from a reference pixel of the plurality of pixels, the alignment feature exposed on an outermost surface of the sensor module and aligned behind a back side of the imaging sensor die, wherein the alignment feature comprises an alignment hole extending into the support structure of the sensor module,
wherein the alignment feature is configured to mechanically connect to a corresponding alignment pin of the imaging system.

US Pat. No. 10,340,301

SUPPORT STRUCTURE FOR INTEGRATED CIRCUITRY

Taiwan Semiconductor Manu...

1. A semiconductor device, comprising:a first trench structure within a substrate and surrounding a first area of the substrate within which an integrated circuit is formed, wherein:
the first trench structure defines a first segmented ring comprising a first trench segment and a second trench segment spaced apart from the first trench segment by a first portion of the substrate; and
a second trench structure within the substrate and surrounding the first area of the substrate, wherein:
the second trench structure defines a second segmented ring comprising a third trench segment, a fourth trench segment, a fifth trench segment, and a sixth trench segment extending between a top surface of the substrate and a bottom surface of the substrate, the second segmented ring being adjacent to four external sides of the semiconductor device,
the first trench structure and the second trench structure are disposed in a second area of the substrate,
the third trench segment is spaced apart from the fourth trench segment by a second portion of the substrate, the second portion of the substrate overlaps the second trench segment in a direction extending parallel to the top surface of the substrate;
the second area of the substrate is disposed between the first area of the substrate and a third area of the substrate surrounding the second area,
the fifth trench segment has a first bent right-angle shape and is located at a first corner of the second trench structure, the sixth trench segment has a second bent right-angle shape and is located at a second corner of the second trench structure adjacent to the first corner, the first bent right-angle shape extending in a first direction a first distance, the second bent right-angle shape extending in the first direction a second distance different from the first distance; and
the third trench segment overlaps with the first trench segment and the second trench segment in a direction extending from the third area of the substrate to the first area of the substrate, wherein each portion of the first segmented ring and the second segmented ring is laterally separated from each integrated circuit within the substrate in a top down view.

US Pat. No. 10,340,300

IMAGE SENSOR WITH TRENCHED FILLER GRID

Taiwan Semiconductor Manu...

1. An image sensor, comprising:a first photodiode;
a dielectric grid comprising a first dielectric structure, wherein:
the first dielectric structure comprises a bottommost surface in direct physical contact with a substrate and an uppermost surface; and
the first dielectric structure has a substantially homogeneous material composition which extends between the bottommost surface and the uppermost surface;
a reflective layer having a first portion overlying and in direct physical contact with the uppermost surface;
a first color filter material structure over the first photodiode and having a sidewall in direct physical contact with a sidewall of the reflective layer; and
a lens structure in direct physical contact with the first color filter material structure and the first portion of the reflective layer.

US Pat. No. 10,340,299

OPTICAL SENSOR PACKAGE MODULE AND MANUFACTURING METHOD THEREOF

PIXART IMAGING INC., Hsi...

1. An optical sensor package module comprising:a substrate;
a sensor chip disposed on the substrate and including an array of pixels located at a top side thereof for receiving light; and
a shielding assembly disposed on the substrate and surrounding the sensor chip for limiting influx of light onto the sensor chip, wherein the shielding assembly includes a shielding element disposed on the sensor chip by an adhesive structure, and the shielding element has a first aperture to expose at least a first subset of the pixels that is configured to receive corresponding light;
wherein the adhesive structure is an adhesive layer disposed between the sensor chip and the shielding element and having a through hole to expose the first subset of the pixels, the through hole corresponding to the first aperture.

US Pat. No. 10,340,298

SEMICONDUCTOR DEVICE HAVING NEGATIVE FIXED CHARGE, POSITIVE FIXED CHARGE AND ELECTRONIC APPARATUS CAPABLE OF REDUCING A LEAKING CURRENT OF A PN JUNCTION REGION

Sony Semiconductor Soluti...

1. A semiconductor device comprising:at least one negative fixed charge film that has a negative fixed charge, wherein the at least one negative fixed charge film extends from a P-type region to a depletion layer on a surface of a PN junction formed in a semiconductor substrate, wherein the negative fixed charge film has a boundary located in the depletion layer in the PN junction; and
a positive fixed charge film that has a positive fixed charge, wherein the positive fixed charge film extends from an N-type region to the depletion layer on the surface of the PN junction, wherein the positive fixed charge film has a boundary located in the depletion layer in the PN junction.

US Pat. No. 10,340,297

DISPLAY DEVICE

Samsung Display Co., Ltd....

1. A display device comprising:a display panel comprising a plurality of data lines extending in a first direction, a plurality of gate lines extending in a second direction intersecting the first direction, and a plurality of thin film transistors connected to the plurality of data lines and the plurality of gate lines, each of the thin film transistors having a channel width;
a data driving circuit configured to supply a data signal to the plurality of data lines; and
a gate driving circuit configured to supply a gate signal to the plurality of gate lines,
wherein the channel width of each of the thin film transistors connected to the same data line increases as the distance between a corresponding thin film transistor and the data driving circuit increases;
each of the plurality of thin film transistors has a gate electrode, a source electrode, a drain electrode and a parasite capacitance generated between the gate electrode and the drain electrode; and
wherein the parasite capacitance between the gate electrode and the drain electrode of each of the thin film transistors connected to the same data line decreases as the distance between a corresponding thin film transistor and the data driving circuit increases.

US Pat. No. 10,340,296

ARRAY SUBSTRATE AND DISPLAY DEVICE

BOE TECHNOLOGY GROUP CO.,...

1. An array substrate, comprising:a plurality of thin film transistors arranged in an array, each of the thin film transistors includes a base substrate, the base substrate comprising:
a gate electrode,
a gate insulating layer,
an oxide active layer,
a light absorption layer for preventing the oxide active layer from irradiated by light,
a source-drain electrode,
a pixel electrode connected to the source-drain electrode, and
a passivation layer for protecting the thin film transistor,
wherein the gate electrode, the gate insulating layer, the oxide active layer, the source-drain electrode, the pixel electrode, the passivation layer and the light absorption layer are sequentially provided on the base substrate, the passivation layer is directly formed on the pixel electrode, the light absorption layer is directly formed on the passivation layer, an orthographic projection of the light absorption layer on the oxide active layer at least partly covers an active region of the oxide active layer, and the light absorption layer is made of black zirconia.

US Pat. No. 10,340,295

FLEXIBLE DISPLAY DEVICE AND BORDER UNIT THEREOF

E Ink Holdings Inc., Hsi...

1. A flexible display device, comprising:a substrate having a display area and a border area that surrounds the display area; and
a border unit located in the border area, and the border unit comprising:
a first metal layer located on the substrate;
an insulation layer covering the first metal layer and the substrate;
a second metal layer located on the insulation layer;
a protection layer covering the second metal layer and the insulation layer;
a semiconductor layer located between the insulation layer and the protection layer;
a planarization layer covering the protection layer; and
a third metal layer located on the planarization layer and having a first part, a second part, and a third part, wherein the third part is located between the first part and the second part, and is physically connected to the first part and the second part, such that a notch is defined by the first part, the second part, and the third part.

US Pat. No. 10,340,294

METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND THIN FILM TRANSISTOR

INDUSTRY-UNIVERSITY COOPE...

1. A method for manufacturing a thin film transistor, the method comprising:forming a patterned metal oxide semiconductor layer and a patterned wiring layer on a substrate; and
etching the wiring layer to form a channel part using an etchant,
wherein the wiring layer includes a compensation layer,
wherein the compensation layer is formed from a material including a metal of a metal oxide component among components of a material forming the metal oxide semiconductor layer,
wherein the compensation layer adjusts for a loss of a surface composition of the metal oxide semiconductor layer and suppresses generation of residue during the etching of the wiring layer,
wherein the loss of the surface composition and the generation of the residue are caused by the etchant, and
wherein the wiring layer further includes:
a metal layer formed opposite to the metal oxide semiconductor layer with the compensation layer interposed therebetween,
an additional compensation layer formed opposite to the compensation layer with the metal layer interposed therebetween, and
a transparent conductive layer formed opposite to the metal layer with the additional compensation layer interposed therebetween.

US Pat. No. 10,340,293

TRANSISTOR DISPLAY PANEL INCLUDING A TRANSISTOR AND AN OVERLAPPING REGION OF A GATE LINE AND DATA LINE

SAMSUNG DISPLAY CO., LTD....

1. A transistor display panel comprising:a substrate;
a gate line disposed on the substrate;
a data line disposed on the substrate; and
a transistor disposed on the substrate,
wherein the transistor includes:
a first electrode;
a second electrode overlapping the first electrode;
a semiconductor layer disposed between the first electrode and the second electrode; and
a gate electrode, wherein the semiconductor layer is disposed in an overlapping region where the gate line and the data line overlap each other.

US Pat. No. 10,340,292

EXTREMELY THIN SILICON-ON-INSULATOR SILICON GERMANIUM DEVICE WITHOUT EDGE STRAIN RELAXATION

International Business Ma...

1. A semiconductor structure comprising:a substrate;
a strained silicon germanium layer disposed on the substrate, wherein the strained silicon germanium layer is free of edge strain relaxation;
a plurality of gate stacks, wherein each gate stack of the plurality of gates stacks is disposed on and in contact with a different portion of the strained silicon germanium layer;
a first plurality of oxide regions within and formed from the strained silicon germanium layer; and
a second plurality of oxide regions within and formed from the strained silicon germanium layer, wherein each different portion of the strained silicon germanium layer is situated between and contacts one oxide region in the first plurality of oxide regions and one oxide region in the second plurality of oxide regions.

US Pat. No. 10,340,290

STACKED SOI SEMICONDUCTOR DEVICES WITH BACK BIAS MECHANISM

GLOBALFOUNDRIES Inc., Gr...

1. A semiconductor device, comprising:a first semiconductor layer formed on an upper surface of a first buried insulating layer;
a first circuit element formed in and above said first semiconductor layer, said first circuit element comprising drain and source regions that are formed at least partially in said first semiconductor layer;
a conductive layer formed above said first circuit element, wherein said conductive layer is electrically isolated from said drain and source regions that are formed at least partially in said first semiconductor layer;
a second buried insulating layer formed on an upper surface of said conductive layer; and
a second semiconductor layer formed on an upper surface of said second buried insulating layer.