US Pat. No. 10,693,185

SOLID ELECTROLYTE MATERIAL AND FLUORIDE ION BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. A solid electrolyte material to be used for a fluoride ion battery, the solid electrolyte material comprising:a composition of BixM1?xF2+x, in which 0.4?x?0.9, and M is at least one kind of Sn, Ca, Sr, Ba, and Pb; and
a crystal phase that has a tysonite structure with a P63/mme spce group.

US Pat. No. 10,693,184

LITHIUM-CONTAINING GARNET CRYSTAL BODY, METHOD FOR PRODUCING SAME, AND ALL-SOLID-STATE LITHIUM ION SECONDARY BATTERY

NATIONAL INSTITUTE OF ADV...

1. A Li7La3Zr2O12 single crystal having a relative density of 99% or more, belonging to a tetragonal system, having a garnet-related type structure, having lattice constants of 1.3052 nm?a?1.31323 nm and 1.26702 nm?c?1.3024 nm, and having Li on four kinds of ion sites, that are 8a site, 16f site, 32g site, and 16e site.

US Pat. No. 10,693,183

ETHER-BASED ELECTROLYTE FOR NA-ION BATTERY ANODE

Battelle Memorial Institu...

1. A device comprising:an anode comprising hard carbon and lithium metal powder, wherein the lithium metal powder is present in the anode in an amount of 0.01 to 20 mg lithium/mg hard carbon and the hard carbon is present in the anode in an amount of greater than 50 weight percent, based on the total dry weight of the hard carbon and lithium metal powder combined; and wherein sodium ions can intercalate into, and de-intercalate from, the anode;
a cathode wherein sodium ions can intercalate into, and de-intercalate from, the cathode; and
an electrolyte composition comprising an ether solvent and a sodium salt, wherein the ether solvent is selected from triethylene glycol dimethyl ether, tetraethylene glycol dimethyl ether, polyethyl glycol dimethyl ether, or a mixture thereof,
wherein the anode, the cathode and the electrolyte composition are configured as a sodium-ion battery.

US Pat. No. 10,693,182

POSITIVE ELECTRODE FOR SECONDARY BATTERY, MANUFACTURING METHOD THEREOF, AND LITHIUM SECONDARY BATTERY INCLUDING SAME

LG Chem, Ltd., (KR)

1. A method for manufacturing a positive electrode for a secondary battery, comprising:applying a first positive electrode slurry including a first positive electrode active material on a positive electrode current collector;
in a first rolling step, rolling the first positive electrode slurry to form a first positive electrode mixture layeron the positive electrode current collector;
applying a second positive electrode slurry including a second positive electrode active material on the first positive electrode mixture layer; and
in a second rolling step, rollingthe second positive electrode slurry applied on the first positive electrode mixture layerto form a second positive electrode mixture layer, wherein the second positive electrode mixture layer is laminated with the first positive electrode mixture layer,
wherein the difference of elongation percentage of the first positive electrode mixture layer and the second positive electrode mixture layer is 0.2 to 0.7%.

US Pat. No. 10,693,181

ELECTRODE AND LITHIUM-ION BATTERY

Ningde Amperex Technology...

1. An electrode, comprising:a current collector;
a first active material layer, comprising a first active material; and
a second active material layer, comprising a second active material;
wherein the first active material layer is arranged between the current collector and the second active material layer, the first active material layer is formed on at least one surface of the current collector, and a ratio of an average particle size of the second active material to an average particle size of the first active material is from 1:1 to 40:1, wherein a particle size of 90% accumulative volume of the first active material is less than 40 ?m.

US Pat. No. 10,693,180

SOLID-STATE POLYMER LITHIUM BATTERY PACK AND PREPARATION METHOD THEREOF

NATIONAL UNIVERSITY OF DE...

1. A solid-state polymer lithium battery pack, comprising: single batteries (1), connecting sleeve members (2), electric cables (3), a battery box (4) and pouring sealant;wherein the single batteries (1) are solid-state polymer lithium-ion batteries composed of a lithium cobalt oxide positive electrode, a graphite negative electrode, a polymer separator, an aluminum alloy positive tab, a nickel-copper alloy negative tab and an Al compound packing film;
a plurality of the single batteries (1) are connected in series by a screw connection manner with the connecting sleeve members (2) to form assembled batteries (6);
a plurality of the assembled batteries (6) are connected in series to form a lithium battery pack (7) ;
and finally the lithium battery pack (7) is put into the battery box (4) made of a composite material, a potting process is utilized to fill the battery box (4) with the pouring sealant having insulation and thermal conductivity, so as to fix the single batteries (1) and the electric cables (3) inside and discharge air in the battery box (4) to obtain the solid-state polymer lithium battery pack finally;
wherein the connecting sleeve members (2) comprise: connection straps (8), insulating spacers (9) and fasteners (10);
wherein the connection straps (8) are prepared by machine-shaping a copper material and silver plating, comprising: a first connection strap (8a), a second connection strap (8b), a third connection strap (8c), a connection strap (8d), a fourth connection strap (8e) and an fifth connection strap (8f); the insulating spacers (9) are made of a material of polyimide comprising: an first insulating spacer (9a), a second insulating spacer (9b) and a third insulating spacer (9c);
the fasteners (10) are made of stainless steel material comprising: fastening screws, nuts, flat washers and spring washers;
the connecting sleeve members (2) comprise four types: an A-type connecting sleeve member (2a), a B-type connecting sleeve member (2b), a C-type connecting sleeve member (2c), and a D-type connecting sleeve member (2d);
wherein the A-type connecting sleeve member (2a) is obtained by installing two A-type connection straps and four fastening screw onto of a first A-type insulating spacer;
the B-type connecting sleeve member (2b) is obtained by installing one A-type connection strap, one B-type connection strap and 3 fastening screws onto a second A-type insulating spacer;
the C-type connecting sleeve member (2c) is obtained by installing a first fastening screw, a first F-type connection strap and a first E-type connection strap onto a first side of a C-type insulating spacer; and installing a second fastening screw, a second F-type connection strap and a second E-type connection strap onto a second side of the C-type insulating spacer;
the D-type connecting sleeve member (2d) is obtained by installing a C-type connection strap, a D-type connection strap, three F-type connection straps and a fastening screw onto a B-type insulating spacer.

US Pat. No. 10,693,179

ELECTROLYTE SOLUTION FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME

LG Chem, Ltd., (KR)

1. An electrolyte solution for a lithium secondary battery comprising an electrolyte salt and an organic solvent,wherein the electrolyte solution further includes a compound represented by Chemical Formula 1 below as an additive:

wherein R is a linear or branched alkylene group with a carbon number of 1 to 3,
R1 is a linear or branched alkylene group with a carbon number of 1 to 5 or arylene group with a carbon number of 5 to 8, and
when R1 is a linear or branched alkylene group with a carbon number of 1 to 5, n is an integer of 1 to 10, and when R1 is an arylene group with a carbon number of 5 to 8, n is an integer of 0 to 10.

US Pat. No. 10,693,178

WEARABLE LITHIUM-SULFUR BATTERY AND METHODS OF MAKING THE SAME

UNIVERSITY OF DAYTON, Da...

1. A lithium sulfur battery comprising:a lithium metal anode;
a sulfur cathode comprising sulfur infused into the cavities of, a lithium superionic conductor conformally coated with conductive carbon;
an electrolyte layer comprising a lithium superionic conductor; and
a porous, flexible current collector;
wherein the electrolyte layer is between the lithium metal anode and the sulfur cathode;
wherein on the sulfur cathode is between the current collector and the electrolyte layer; and
wherein the battery is flexible such that it can be partially rolled up or wrapped about an appendage of a wearer.

US Pat. No. 10,693,177

LEAD FOR LITHIUM SECONDARY BATTERY HAVING EXCELLENT STABILITY AGAINST OVERCHARGE AND POUCH TYPE LITHIUM SECONDARY BATTERY COMPRISING THE SAME

LG Chem, Ltd., Seoul (KR...

1. A pouch-shaped secondary battery, comprising:a pouch-shaped battery case including an upper pouch part and a lower pouch part;
a battery cell in the pouch-shaped battery case;
an electrode tab in the pouch-shaped battery case and connected to the battery cell;
an electrode lead connected to the electrode tab and extended to an outside of the battery case,
wherein a lower surface of the electrode tab is overlapped with an upper surface of the electrode lead to define an overlap such that the lower surface of the electrode tab is electrically connected with the upper surface of the electrode lead; and
a conductive adhesive layer between the electrode tab and the electrode lead at the overlap,
wherein the lower surface and the upper surface at the overlap have a plurality of peaks and valleys to define cooperating patterned surfaces so that the lower surface is in contact with the upper surface at an entirety of the overlap,
wherein at least one of the electrode tab and the electrode lead is contacted with the pouch-shaped battery case so that the electrode tab and the electrode lead separate when the pouch-shaped battery case is deformed due to an increase in a volume of the pouch-shaped battery case, and
wherein the cooperating patterned surfaces of each of the upper surface and the lower surface includes one of a quadrangular section, a circular section, a semicircular section, a diamond-shaped section, an oblique section, a wave section, a zigzag section, and a sawtooth section.

US Pat. No. 10,693,176

HYBRID CELL DESIGN OF ALTERNATIVELY STACKED OR WOUND LITHIUM ION BATTERY AND CAPACITOR ELECTRODES

GM GLOBAL TECHNOLOGY OPER...

7. A hybrid electrochemical cell of lithium-ion battery and capacitor electrodes, the electrochemical cell comprising an assembly of at least two pairs of stacked or wound rolls of facing, opposing electrical charge electrodes, each electrode consisting of a two-sided current collector foil coated on both sides with a porous layer of particles of an electrode material, the porous layers of each electrode material being separated from each other by the two-sided current collector foil and from a facing layer of an electrode material by a co-extensive porous separator layer, the pores of the facing electrode materials and separator layers being infiltrated with a non-aqueous electrolyte solution containing lithium cations and corresponding anions;the two porous layers of electrode material that are coated separately on each two-sided current collector foil being selected from the group consisting of: (i) a layer of lithium-ion battery anode material on both sides of the current collector foil, (ii) a layer of lithium-ion battery cathode material on both sides of the current collector foil, and (iii) a layer of lithium cation adsorbing/desorbing capacitor material or a layer of corresponding anion adsorbing/desorbing capacitor material on both sides of the current collector foil; and
the at least two pairs of opposing electrical charge electrodes including at least one two-side coated capacitor electrode and an un-equal number of electrodes of anode material and of cathode material, the coating layers on the at least two pairs of opposing electrodes being selected to obtain a predetermined combination of energy density (Wh/kg) and power density (W/kg) for the electrochemical cell.

US Pat. No. 10,693,175

BIPOLAR ELECTRODE FOR NICKEL-HYDROGEN STORAGE BATTERY AND NICKEL-HYDROGEN STORAGE BATTERY

KABUSHIKI KAISHA TOYOTA J...

1. A bipolar electrode for a nickel-hydrogen storage battery, the bipolar electrode comprising:a metal foil;
a first active material layer provided on a front surface of the metal foil; and
a second active material layer provided on a rear surface of the metal foil and having a larger area than the first active material layer,
wherein the second active material layer includes
a low density region disposed in a peripheral portion in plan view as viewed from a thickness direction of the metal foil, and
a high density region disposed inward of the low density region and having a smaller porosity than the low density region.

US Pat. No. 10,693,174

FUEL CELL STACK AND METHOD OF PRODUCING THE SAME

MORIMURA SOFC TECHNOLOGY ...

1. A fuel cell stack of a flat plate type, comprising a plurality of plate-shaped fuel cells stacked on one another in a stacking direction, each of the plate-shaped fuel cells including an electrolyte layer, an anode disposed on one surface of the electrolyte layer and in contact with fuel gas, and a cathode disposed on the other surface of the electrolyte layer and in contact with oxidant gas, the fuel cells being assembled in a state in which they are pressed in the stacking direction,the fuel cell stack being characterized in that
at least one of a fuel manifold communicating with a space adjacent to the anode which is a flow passage where the fuel gas comes into contact with the anode and an oxidant manifold communicating with a space adjacent to the cathode which is a flow passage where the oxidant gas comes into contact with the cathode is provided to extend in the stacking direction;
around the at least one manifold of the fuel manifold and the oxidant manifold, the at least one manifold extending in the stacking direction, a compression seal member and a glass seal member are disposed in parallel along a plane in which the corresponding fuel cell extends such that the compression seal member and the glass seal member are sandwiched in the stacking direction between corresponding two of components of the fuel cell stack and surround the at least one manifold;
the compression seal member is disposed surrounding the entire periphery of the at least one manifold;
the glass seal member has a softening point higher than an operating temperature of the fuel cell stack;
the compression seal member is a sheet-shaped member composed of mica or vermiculite which deforms when pressed to thereby form a gas seal,
wherein the compression seal member and the glass seal member are disposed between (i) one of interconnectors and (ii) one of separators, the respective interconnectors serving as a partition between adjacent two of the fuel cells, end plates being disposed at opposite ends of the fuel cell stack in the stacking direction, and the respective separators being joined to the electrolyte layer of the corresponding fuel cell and separating the space adjacent to the anode of the corresponding fuel cell and the space adjacent to the cathode of the corresponding fuel cell,
wherein the separators are formed of metal, and
wherein (i) the one of the separators and (ii) the one of the interconnectors are disposed between the two anodes in the adjacent two of the fuel cells.

US Pat. No. 10,693,173

FUEL CELL DEVICE

PANASONIC INTELLECTUAL PR...

1. A fuel cell device comprising:a fuel cell stack having a plurality of stacked unit cells;
a first current collector and a second current collector which are arranged such that the fuel cell stack is sandwiched between the first current collector and the second current collector in a stacking direction of the unit cells;
a housing which stores the fuel cell stack, the first current collector, and the second current collector;
a conductive first fastening member which is electrically connected to the second current collector, extends from the second current collector toward the first current collector in the stacking direction of the unit cells, and has a first protrusion protruding from inside the housing to outside the housing, the entire conductive first fastening member being electrically connected to the second current collector;
a first elastic member which is provided at the first protrusion of the first fastening member so as to elastically bias the second current collector toward the first current collector via the first fastening member;
a second fastening member which extends from the second current collector toward the side where the first current collector is disposed in parallel with the first fastening member and has a second protrusion protruding from inside the housing to outside the housing;
a second elastic member which is provided at the second protrusion of the second fastening member so as to elastically bias the second current collector toward the first current collector via the second fastening member;
through-holes which are formed in a wall of the housing to allow the first fastening member and the second fastening member to extend through;
respective flanged juts which are provided at the first protrusion and the second protrusion, the respective flanged juts directly contact the first protrusion and the second protrusion; and
first sealing materials having elasticity which are arranged between the juts and the wall of the housing,
wherein the juts are arranged in contact with the housing via the first sealing materials so as to seal gaps formed between the first and second protrusions and the through-holes.

US Pat. No. 10,693,172

MANUFACTURING METHOD OF FUEL CELL STACK

HONDA MOTOR CO., LTD., T...

1. A manufacturing method of a fuel cell stack including a cell stack, comprising:providing the cell stack including fuel cells stacked in a stacking direction and having a first end and a second end opposite to the first end in the stacking direction;
providing a first end plate at the first end of the cell stack, the first end plate having a first end plate through hole;
providing a second end plate at the second end of the cell stack;
providing a connecting member to connect the first end plate and the second end plate such that first end plate through hole is aligned with a first connecting member installing hole in the connecting member;
inserting a first knock with a first seal and a second seal into the first end plate through hole and into the first connecting member installing hole, both of the first seal and the second seal being provided around an outer surface of the first knock, the first seal being located between the first knock and the first end plate in the first end plate through hole, the second seal being located between the first knock and the connecting member in the first connecting member installing hole;
moving the first end plate or the connecting member in the stacking direction to contact each other;
inserting a fastening member into the first knock to connect the first the end plate to the connecting member;
wherein the first knock has a first housing groove extending around an outer circumference thereof, the first seal being disposed within the first housing groove,
wherein the first knock has a second housing groove extending around the outer circumference thereof, the second seal being disposed within the second housing groove, and
wherein the first housing groove and the second housing groove are spaced apart from each other on the outer surface of the first knock;
wherein the first seal directly contacts the first knock and the first end plate, and
wherein the second seal directly contacts the first knock and the connecting member.

US Pat. No. 10,693,171

SYSTEM AND METHOD FOR PREPARING HIGH PURITY VANADIUM ELECTROLYTE

INSTITUTE OF PROCESS ENGI...

1. A system for preparing a high-purity vanadium electrolyte, comprising: a vanadium oxytrichloride storage tank, an ammonium salt precipitating device, an ammonium salt feeding device, a preheating system, a reduction fluidized bed, a cooling system, a secondary cooling device, a low-valence vanadium oxide feeding device, and a dissolution and activation reactor;wherein the ammonium salt precipitating device comprises an ammonium salt precipitating reaction tank and a washing filter;
the ammonium salt feeding device comprises an ammonium salt hopper and an ammonium salt screw feeder;
the preheating system comprises a primary cyclone preheater, a venturi preheater, a secondary cyclone preheater, and a first cyclone separator;
the reduction fluidized bed comprises a feeder, a bed body, a discharger, a gas heater, a gas purifier, and an ammonium chloride settling tower;
the cooling system comprises a venturi cooler, a cyclone cooler, and a second cyclone separator;
the low-valence vanadium oxide feeding device comprises a low-valence vanadium oxide hopper and a low-valence vanadium oxide screw feeder;
wherein a feed outlet at the bottom of the vanadium oxytrichloride storage tank is connected with a chloride inlet of the ammonium salt precipitating reaction tank through a pipeline; an ammonia solution inlet of the ammonium salt precipitating reaction tank is connected with a purified ammonia liquor main pipe and a gas outlet of the first cyclone separator through pipelines; a flue gas outlet of the ammonium salt precipitating reaction tank is connected with a tail gas treatment system through a pipeline; a slurry outlet of the ammonium salt precipitating reaction tank is connected with a slurry inlet of the washing filter through a pipeline; a clean water inlet of the washing filter is connected with a clean water main pipe through a pipeline; a washing liquid outlet of the washing filter is connected with a wastewater treatment unit through a pipeline; and a solid material outlet of the washing filter is connected with a feed inlet of the ammonium salt hopper through a pipeline;
a feed outlet at the bottom of the ammonium salt hopper is connected with a feed inlet of the ammonium salt screw feeder; and a feed outlet of the ammonium salt screw feeder is connected with a feed inlet of the venturi preheater through a pipeline;
a gas inlet of the venturi preheater is connected with a gas outlet of the primary cyclone preheater through a pipeline; a feed outlet of the venturi preheater is connected with a gas inlet of the secondary cyclone preheater through a pipeline; a gas outlet of the secondary cyclone preheater is connected with a gas inlet of the first cyclone separator through a pipeline; a feed outlet of the secondary cyclone heater is connected with a gas inlet of the primary cyclone heater through a pipeline; a gas outlet of the first cyclone separator is connected with the ammonia solution inlet of the ammonium salt precipitating reaction tank through a pipeline; a feed outlet of the first cyclone separator is connected with the gas inlet of the primary cyclone preheater through a pipeline; the gas inlet of the primary cyclone preheater is connected with a gas outlet of the ammonium chloride settling tower through a pipeline; a feed outlet of the primary cyclone preheater is connected with a feed inlet of the feeder through a pipeline; a feed outlet of the feeder is connected with a feed inlet of the bed body through a pipeline; an aeration air inlet of the feeder is connected with a purified nitrogen gas main pipe through a pipeline; a high-temperature flue gas outlet of the bed body is connected with a gas inlet of the ammonium chloride settling tower through a pipeline; the gas outlet of the ammonium chloride settling tower is connected with the gas inlet of the primary cyclone preheater through a pipeline; a gas inlet of the bed body is connected with a gas outlet of the gas heater through a pipeline; a gas inlet of the gas heater is connected with gas outlets of the second cyclone separator and the gas purifier through pipelines, respectively; a combustion air inlet of the gas heater is connected with a compressed air main pipe; a fuel inlet of the gas heater is connected with a fuel main pipe; and a gas inlet of the gas purifier is connected with a reducing gas main pipe;
a gas inlet of the venturi cooler is connected with the purified nitrogen gas main pipe; a gas outlet of the venturi cooler is connected with a gas inlet of the cyclone cooler through a pipeline; a gas outlet of the cyclone cooler is connected with a gas inlet of the second cyclone separator through a pipeline; a feed outlet of the cyclone cooler is connected with a feed inlet of the secondary cooling device through a pipeline; a gas outlet of the second cyclone separator is connected with the gas inlet of the gas heater through a pipeline; and a feed outlet of the second cyclone separator is connected with the feed inlet of the secondary cooling device through a pipeline;
a feed outlet of the secondary cooling device is connected with a feed inlet of the low-valence vanadium oxide hopper through a pipeline; a process water inlet of the secondary cooling device is connected with a process water main pipe; and a process water outlet of the secondary cooling device is connected with a water cooling system;
a feed outlet at the bottom of the low-valence vanadium oxide hopper is connected with a feed inlet of the low-valence vanadium oxide screw feeder; and a feed outlet of the low-valence vanadium oxide screw feeder is connected with a feed inlet of the dissolution and activation reactor through a pipeline;
a clean water inlet of the dissolution and activation reactor is connected with the clean water main pipe; a sulfuric acid solution inlet of the dissolution and activation reactor is connected with a sulfuric acid solution main pipe; and a gas outlet of the dissolution and activation reactor is connected with the tail gas treatment system.

US Pat. No. 10,693,170

LITHIUM AIR BATTERY HAVING MULTI-LAYERED ELECTROLYTE MEMBRANE AND MANUFACTURING METHOD THEREOF

Hyundai Motor Company, S...

1. A method of manufacturing a lithium air battery, comprising:(a) preparing a first electrolyte membrane by mixing a lithium ion conductive inorganic electrolyte, a polymer electrolyte, and a pore-forming additive with an organic solvent;
(b) preparing a second electrolyte membrane;
(c) laminating the second electrolyte membrane on the first electrolyte membrane;
(d) soaking the laminated first and second electrolyte membranes in a liquid electrolyte;
(e) forming a lithium negative electrode on the first electrolyte membrane prepared in step (d); and
(f) forming an air electrode on the second electrolyte membrane prepared in step (d),
wherein the lithium ion conductive inorganic electrolyte and the polymer electrolyte are mixed in a weight ratio of about 80 to 90:10 to 20 to prepare the first electrolyte membrane,
wherein the pore-forming additive is dibutylphthalate, and
wherein an amount of about 5 to 10 wt % of the pore-forming additive is mixed with respect to the total weight combining the lithium ion conductive inorganic electrolyte and the polymer electrolyte.

US Pat. No. 10,693,169

SEPARATOR FOR FUEL CELL OR CURRENT COLLECTING MEMBER FOR FUEL CELL, AND MANUFACTURING METHOD THEREOF

Plasma Ion Assist Co., Lt...

1. A method of manufacturing a separator for a fuel cell or a current collecting member for a fuel cell comprising:(a) process in which a metal substrate for a fuel cell is transferred into a plasma treatment chamber;
(b) process in which a surface of the metal substrate is cleaned using a plasma treatment method while the metal substrate is heated to between 100° C. and 450° C.;
(c) process in which a conductive gas barrier film is formed on a surface of the metal substrate through inductively coupled plasma, wherein the conductive gas barrier film is a film formed by conductive amorphous carbon or conductive diamond-like carbon having a resistivity of 0.01 ?·cm to 10 ?·cm; and
(d) process in which a conductive resin film is formed on a surface of the conductive gas barrier film.

US Pat. No. 10,693,168

METHOD FOR USING FUEL CELL HAVING CURVED MEMBRANE ELECTRODE ASSEMBLY

Tsinghua University, Bei...

1. A method for using fuel cell, the method comprising:providing a fuel cell, wherein the fuel cell comprises:
a container, the container having a housing and a nozzle, and the housing defining a plurality of through holes, wherein the housing defining a chamber and an opening, wherein the nozzle having a first end in air/fluid communication with the opening and a second end opposite to the first end; and
a membrane electrode assembly, being is flexible and curved, on the container, the membrane electrode assembly surrounding the chamber and covering the plurality of through holes, wherein the membrane electrode assembly comprises a proton exchange membrane having a first surface and a second surface opposite to the first surface, a cathode electrode on the first surface and an anode electrode on the second surface;
at least partially immersing the fuel cell in a fuel; and
supplying an oxidizing gas into the chamber of the fuel cell.

US Pat. No. 10,693,167

METHOD OF AND APPARATUS FOR EVALUATING MEMBRANE THICKNESS OF ELECTROLYTE MEMBRANE

HONDA MOTOR CO., LTD., T...

1. A membrane thickness evaluation method of evaluating a membrane thickness of an electrolyte membrane in a membrane electrode assembly for a fuel cell, the membrane electrode assembly including an anode, a cathode, and an electrolyte membrane of solid polymer interposed between the anode and the cathode,the method comprising the steps of:
measuring impedance of the electrolyte membrane by applying alternating current voltage between a first voltage application electrode and a second voltage application electrode electrically connected to the anode and the cathode, respectively; and
determining the membrane thickness of the electrolyte membrane from the correlation between the membrane thickness and electrostatic capacitance calculated from the impedance, and from the electrostatic capacitance determined in the measuring step, wherein
the correlation is determined based on a calibration curve created at predetermined humidity, and in the measuring step, the impedance is measured at humidity corresponding to the humidity when the calibration curve was created.

US Pat. No. 10,693,166

FUEL CELL SYSTEM

Panasonic Intellectual Pr...

1. A fuel cell system comprising:a fuel cell that generates electric power using fuel gas and oxidant gas;
a fuel gas supply path through which the fuel gas is supplied to an anode inlet of the fuel cell;
a recycle gas path through which anode off-gas discharged from an anode outlet of the fuel cell returns to the fuel gas supply path; and
a pressure booster arranged in the recycle gas path,
wherein the pressure booster is arranged above a confluence portion where the fuel gas supply path and the recycle gas path meet each other when gravity acts downward from above, and the pressure booster is coupled to and positioned higher than the confluence portion such that a pipe from the pressure booster to the confluence portion is sloped or declined in a direction of gravity.

US Pat. No. 10,693,165

ENVIRONMENTAL SENSOR ARRAY FOR FUEL CELL AIR FILTRATION SYSTEMS

1. A method, comprising:monitoring, by an environmental sensor array, both a pre-filter airflow to an air filter and a post-filter airflow to a fuel cell, wherein the air filter is between an air intake and the fuel cell;
sensing, by the environmental sensor array, amounts of filter exposure of one or more air contaminants in the monitored pre-filter airflow;
correlating, by the environmental sensor array, the sensed amounts of filter exposure of the one or more air contaminants over time to a long-term adsorption limit of the one or more air contaminants for the air filter;
determining, by the environmental sensor array, a lifetime usage level of the air filter based on the correlating;
providing, by the environmental sensor array, an indication of the lifetime usage level of the air filter;
sensing instantaneous level of post-filter air contaminants in the monitored post-filter airflow;
determining whether the instantaneous level of any particular air contaminant of the post-filter air contaminants is above a respective threshold level; and
switching, by an air flow control system, the pre-filter airflow to pass through a standby air filter in an alternative airflow path to the fuel cell in response to the instantaneous level of any particular air contaminant of the post-filter air contaminants being above the respective threshold level.

US Pat. No. 10,693,164

FUEL CELL VEHICLE

Toyota Jidosha Kabushiki ...

1. A fuel cell vehicle comprising:an electric traction motor;
an inverter configured to convert DC power to AC power for driving the electric traction motor;
a fuel cell system including a fuel cell configured to generate the DC power with hydrogen fuel and oxygen;
a first boost converter including first low voltage terminals connected to the fuel cell and first high voltage terminals connected to the inverter, the first boost converter including a first capacitor connected between a positive terminal and a negative terminal of the first high voltage terminals;
a first relay connected between the first boost converter and the inverter; and
a controller,
wherein the controller is configured to:
shut down the fuel cell system;
while a voltage of the fuel cell is higher than a predetermined voltage threshold, discharge the first capacitor with a voltage of the first capacitor maintained to be higher than the voltage of the fuel cell; and
when the voltage of the fuel cell becomes lower than the predetermined voltage threshold, stop the discharging of the first capacitor and disconnect the first boost converter from the inverter by opening the first relay.

US Pat. No. 10,693,163

FUEL CELL SYSTEM AND VEHICLE

Toyota Jidosha Kabushiki ...

1. A fuel cell system comprising:a fuel cell stack;
a voltage detector that detects an output voltage of the fuel cell stack;
a fuel cell converter that regulates the output voltage; and
a control section that is configured to: transmit a first current command value used to lower the output voltage to the fuel cell converter in a case where the output voltage becomes equal to or higher than a first voltage that is an upper limit of an output voltage range; transmit a second current command value used to boost the output voltage to the fuel cell converter in a case where the output voltage becomes equal to or lower than a second voltage that is a lower limit of the output voltage range; store the first current command value as a first storage value in the case where the output voltage becomes equal to or lower than the second voltage; store the second current command value as a second storage value in the case where the output voltage becomes equal to or higher than the first voltage; and transmit the current command value as the first current command value or the second current command value to the fuel cell converter, the current command value being calculated by using the first storage value and the second storage value and falling between the first storage value and the second storage value.

US Pat. No. 10,693,162

DEVICE AND METHOD FOR CONTROLLING FUEL CELL STACK CONNECTION

SK INNOVATION CO., LTD., ...

1. A device for controlling fuel cell stack connection, comprising a plurality of fuel cell stacks and a power conditioning unit connected to the plurality of fuel cell stacks, the device comprising:a memory storing therein a predetermined first critical value, a first range from zero (0) to the first critical value, and at least one predetermined boundary value used to divide the first range into at least two subsidiary ranges;
a plurality of stack voltage sensing units for sensing voltages of the plurality of fuel cell stacks; and
a control unit configured to:
define a plurality of groups corresponding in number to the at least two subsidiary ranges, such that each of the plurality of groups is assigned a range corresponding to a respective one of the at least two subsidiary ranges;
monitor the plurality of stack voltage sensing units;
then determine a highest voltage sensed among the plurality of fuel cell stacks;
then calculate, for each fuel cell stack, a difference value between the voltage of that fuel cell stack and the highest voltage; and
then control a switching unit, for each fuel cell stack, to switch that fuel cell stack into a specific one of the defined plurality of groups that has a range corresponding to the calculated difference value.

US Pat. No. 10,693,161

FUEL CELL SYSTEM AND METHOD FOR CONTROLLING SAME

NISSAN MOTOR CO., LTD., ...

1. A fuel cell system comprising:a fuel cell stack in which a plurality of cells is stacked, each of the cells including:
an electrolyte membrane that includes catalyst layers on both sides of an anode and a cathode; an anode flow channel that supplies fuel gas to the anode; and a cathode flow channel that supplies oxidation gas to the cathode;
a fuel gas adjusting apparatus that adjusts a flow rate of the fuel gas in the anode flow channel;
an oxidation gas adjusting apparatus that adjusts a flow rate of the oxidation gas in the cathode flow channel;
a concentration gradient adjusting apparatus; and
a control unit programmed to:
control the fuel gas adjusting apparatus and the oxidation gas adjusting apparatus in accordance with a state of the fuel cell stack,
adjust a concentration gradient of water in the electrolyte membrane between the anode and the cathode, wherein the concentration gradient of water is given as a ratio of a moisture content contained in a cathode catalyst layer to a moisture content contained in an anode catalyst layer,
determine whether an operating state of the fuel cell system is a low-temperature startup operation or a normal-running operation, the low-temperature startup operation being an operation for raising a temperature of the fuel cell stack, the normal-running operation being an operation for allowing power generation of the fuel cell stack, and
execute recovery control for causing the concentration gradient adjusting apparatus to increase the concentration gradient of water in the electrolyte membrane to be larger than that in the normal-running operation when the control unit determines that the operation state is the low-temperature startup operation, the recovery control causing moisture in the cathode catalyst to move to the electrolyte membrane during the low-temperature startup operation.

US Pat. No. 10,693,160

FUEL CELL SYSTEM AND METHOD OF CONTROLLING THE SAME

Toyota Jidosha Kabushiki ...

1. A fuel cell system comprising:a fuel cell stack;
a compressor that supplies cathode gas to the fuel cell stack; and
a controller configured to control constituent components of the fuel cell system including the compressor,
wherein the controller is configured to control the compressor, such that a supply period in which the compressor supplies the cathode gas and a stop period in which supply of the cathode gas is stopped appear alternately, when the fuel cell stack is not required to generate electric power, and
the controller is configured to control the compressor, such that the supply period is longer than the stop period, and a flow rate of the cathode gas supplied by the compressor in the supply period is smaller than a flow rate in a case where the fuel cell stack is required to generate electric power.

US Pat. No. 10,693,159

FUEL CELL SYSTEM AND CONTROL DEVICE

TOYOTA JIDOSHA KABUSHIKI ...

1. A fuel cell system comprising:a first decompression unit that is disposed in a supply path for supplying hydrogen from a hydrogen tank to a fuel cell stack and decompresses hydrogen to be supplied to the fuel cell stack;
an expander that is disposed upstream from the first decompression unit in the supply path and decompresses and expands hydrogen supplied from the hydrogen tank;
a flow rate adjusting unit that is disposed upstream from the expander in the supply path and is able to be switched to one of an open state in which hydrogen is supplied to the expander and a closed state in which a supply of hydrogen to the expander is intercepted or an amount of hydrogen supplied to the expander is less than that in the open state; and
a control unit that performs control of switching the flow rate adjusting unit to the closed state when a pressure difference between a first pressure upstream from the expander in the supply path and a second pressure downstream from the expander is less than a first threshold value or when a pressure ratio of the second pressure to the first pressure is equal to or greater than a second threshold value.

US Pat. No. 10,693,158

METHODS OF OPERATING FUEL CELL SYSTEMS WITH IN-BLOCK REFORMING

LG Electronics, Inc., Se...

1. A method in a fuel cell system comprising:expelling, by a fuel exhaust manifold of a fuel cell stack, fuel exhaust;
expelling, by an oxidant exhaust manifold of the fuel cell stack, oxidant exhaust;
receiving, by an anode ejector, fuel from a source of fuel;
receiving, by the anode ejector, a first portion of the fuel exhaust from the fuel exhaust manifold;
supplying, by the anode ejector, a stream of fuel comprising at least a portion of the received fuel and the received first portion of the fuel exhaust to a pre-reformer;
removing, by the pre-reformer, higher hydrocarbons from the stream of fuel from the anode ejector;
providing, by the pre-reformer, the stream of fuel to a fuel supply manifold of the fuel cell stack for in-block reforming;
receiving, by an oxidant supply manifold of the fell cell stack, an oxidant from a source of oxidant; and
in-block reforming, by the fuel cell stack, of the stream of fuel with the received oxidant,
wherein all fuel reforming of the fuel cell system is performed by the fuel cell stack and the pre-former is an adiabatic catalytic converter configured to remove the higher hydrocarbons with no heat input other than heat from the stream of fuel from the anode ejector,
wherein the anode ejector includes a first anode ejector and a second anode ejector,
wherein the pre-reformer includes a first pre-reformer and a second pre-reformer, and
wherein the first pre-reformer is disposed between an outlet of the first anode ejector and the fuel supply manifold, and the second pre-reformer is disposed between an outlet of the second anode ejector and the fuel supply manifold.

US Pat. No. 10,693,157

HUMIDIFIER WITH AN INTEGRATED WATER SEPARATOR FOR A FUEL CELL SYSTEM, FUEL CELL SYSTEM INCLUDING A HUMIDIFIER, AND VEHICLE INCLUDING SAME

Volkswagen AG, Wolfsburg...

1. A humidifier with an integrated water separator for a fuel cell system, comprising:a housing with a first channel for a first gas stream and with a second channel for a second gas stream;
a humidifier area, the first channel and the second channel being separated from one another in the humidifier area by a water vapor-permeable membrane;
a water separator, situated in the humidifier area in one of the first and second channels to be in contact with the water vapor-permeable membrane separating the first and second channel, for separating liquid water; and
a collection container for collecting the deposited liquid water, the collection container being below the first and second channels and configured such that water trickles down the water separator or the water vapor-permeable membrane into the collection container.

US Pat. No. 10,693,156

POWER SOURCE DEVICE

TOYOTA JIDOSHA KABUSHIKI ...

1. A power source device comprising:a casing housing a fuel cell or a battery;
a room provided in the casing, the room partitioned from a main space by a partition, the fuel cell or the battery being housed in the main space, the room being smaller than the main space, an upper surface of the partition corresponding to a floor of the room, a lower surface of the partition corresponding to a ceiling of the main space;
a cooler built in the partition;
a first electric component being in contact with the ceiling so as to be opposed to the cooler; and
a second electric component being in contact with the floor so as to be opposed to the cooler, an amount of heat generated by the second electric component being smaller than an amount of heat generated by the first electric component;
wherein the casing comprises a through hole communicating the room with the main space.

US Pat. No. 10,693,155

COOLANT PURIFICATION

INTELLIGENT ENERGY LIMITE...

1. A method of operating a fuel cell system, the method comprising:introducing ozone with an ozone generator into a coolant in the fuel cell system;
controlling flow of the coolant to a fuel cell stack in the fuel cell system with a controller,
determining a level of ozone in the flow of the coolant; and
comparing the level of ozone with a predetermined threshold level of ozone in the coolant;
wherein the controlling of the flow of the coolant comprises directing the flow of the coolant through either a deionisation apparatus or a bypass conduit based on an operating state of the ozone generator,
wherein the bypass conduit is arranged in parallel with the deionization apparatus and the deionization apparatus is coupled to the fuel cell stack;
wherein the flow of the coolant is directed through the bypass conduit when the level of ozone in the coolant is above the predetermined threshold level of ozone in the coolant; and,
wherein the flow of the coolant is directed through the deionisation apparatus when the level of ozone in the coolant is below a predetermined threshold level of ozone in the coolant.

US Pat. No. 10,693,154

METHOD FOR MANUFACTURING FUEL CELL STACK

NISSAN MOTOR CO., LTD., ...

1. A method for manufacturing a solid oxide fuel cell stack by heating a stack of fuel cell single cells, each of the fuel cell single cells comprising organic substance-containing inorganic sealing members, a separator, an anode electrode, an electrolyte and a cathode electrode,the method comprising an organic substance removing step of removing an organic substance in the organic substance-containing inorganic sealing members,
the organic substance removing step comprises heating the stack while positively supplying a supply of an oxygen-containing gas to fuel channels on the anode electrode side to remove the organic substance from the inorganic sealing members and externally applying an electric current to migrate charges from the anode electrode to the cathode electrode.

US Pat. No. 10,693,153

INTERCONNECTOR-ELECTROCHEMICAL REACTION UNIT CELL COMPOSITE BODY, ELECTROCHEMICAL REACTION CELL STACK, AND METHOD OF MANUFACTURING INTERCONNECTOR-ELECTROCHEMICAL REACTION UNIT CELL COMPOSITE BODY

MORIMURA SOFC TECHNOLOGY ...

1. An interconnector-electrochemical reaction unit cell composite body comprising:an electrochemical reaction unit cell including an electrolyte layer, and a cathode and an anode which face each other in a first direction with the electrolyte layer intervening therebetween; and
an interconnector which is disposed on one side of the electrochemical reaction unit cell in the first direction,
the interconnector-electrochemical reaction unit cell composite body being characterized in that
the interconnector has a plurality of combinations of a protrusion protruding in the first direction and a recess provided on a side opposite the protrusion in the first direction and being concave toward the protrusion; and
at least one of the plurality of combinations of the protrusion and the recess is configured such that,
in a sectional view of the interconnector taken along the first direction, (i) a bottom of the recess is located on a side toward an open end of the recess with respect to a proximal end of the protrusion, (ii) the recess is located within a range of a width t2 of the protrusion in a second direction orthogonal to the first direction, and a width t1 of the recess in the second direction is smaller than the width t2 of the protrusion, (iii) a depth h of the recess in the first direction and a distance H in the first direction between the open end of the recess and the proximal end of the protrusion satisfy a relation of 0.563?h/H?0.750.

US Pat. No. 10,693,152

FUEL CELL STACK WITH THIN ENDPLATE WITH INTEGRATED GAS DISTRIBUTION TUBES

1. A solid oxide fuel cell stack comprising a plurality of stacked solid oxide fuel cells, wherein the solid oxide fuel cell stack is subjected, during operation, to high temperatures of up to approximately 10001° C., causing temperature gradients in the stack and thus thermal expansion of components of the stack, each solid oxide fuel cell comprising at least an anode, an electrolyte and a cathode and neighboring fuel cells are divided each by an interconnect, said stack has a first length and a first width, and further comprises:at least one rectangular process-gas-connection-endplate formed of a metal layer consisting of a chrome steel or a nickel ahoy and having a thickness in the range of 0.2-2.0 mm, wherein the anode, cathode, electrolyte, interconnect and endplate are dimensioned to each have the first length and first width, the metal material and thickness of said process-gas-connection-endplate providing said process-gas-connection-endpate with a temperature expansion coefficient substantially the same as the temperature expansion coefficient of said plurality of cells to prevent damage from thermomechanical stresses and cracks, and stack delamination, due to temperature changes of the fuel cell stack, and to lower the thermal mass of said stack;
said at least one process-gas-connection-endplate and said plurality of fuel cells are connected to each other by seals to form a single integrated unit, and said process-gas-connection-endplate comprises at least one process gas distribution tube having a flexible member to compensate for vibrations and movements due to temperature changes of the fuel cell stack and due to vibrations and movements of connected process gas equipment relative to the fuel cell stack, said process gas distribution tube having a first end fixedly connected to an outer first face of the process-gas-connection-endplate and a second end extending outwardly away from said outer first face, and process gas flow paths integrated in a second face of the process-gas-connection-endplate opposite the first face of the process-gas-connection-endplate, said second face of the process-gas-connection endplate being in direct contact with one of said anode or cathode of the fuel cell, and the integrated flow paths distribute a process gas from the first process gas distribution inlet tube evenly past an active area of said fuel cells and to a second process gas distribution outlet tube,
whereby the process-gas-connection-endplate and said at least one process gas distribution tube are permanently fixedly connected to form an integrated unit and no seals are disposed between the process-gas-connection-endplate and the at least one process gas distribution tube.

US Pat. No. 10,693,151

BIPOLAR PLATE FOR FUEL CELL HAVING CONTROLLED STRUCTURE OF CARBON MATERIALS AND METHOD OF MANUFACTURING THE SAME

Morgan Co., Ltd., (KR)

1. A method of manufacturing a bipolar plate for a fuel cell having a controlled structure of carbon materials, comprising:obtaining a masterbatch by mixing a first carbon material powder having a size ranging from 0.1 to 200 ?m with a polymer resin;
forming a masterbatch powder by crushing the masterbatch;
preparing a conductive composition by mixing the masterbatch powder with a second carbon material powder having a size ranging from 300 ?m to 1 mm; and
manufacturing a bipolar plate by subjecting the conductive composition to compression molding.

US Pat. No. 10,693,150

STACK FOR MANUFACTURING BIPOLAR PLATES FOR FUEL CELLS

Compagnie Generale des Et...

1. A stack for manufacturing bipolar plates for fuel cells, the stack comprising:bipolar plates; and
intermediate plates,
wherein each of the bipolar plates includes first and second sheets arranged in a superimposed position relative to each other, with a layer of filler material arranged between the first and second sheets,
wherein the intermediate plates include an intermediate plate having a plurality of slots passing therethrough in a direction of a thickness of the intermediate plate,
wherein the bipolar plates are arranged alternately with the intermediate plates in the stack,
wherein at least some of the slots extend from edges of the intermediate plate, so as to form outwardly overhanging portions of the intermediate plate that outwardly overhang a bipolar plate of the bipolar plates, and
wherein each of the bipolar plates is adjacent to an intermediate plate of the intermediate plates.

US Pat. No. 10,693,149

SURVIVOR LOCATOR LIGHT

EPSILOR-ELECTRIC FUEL, LT...

1. A Water Activated Battery characterized bya) At least one anode selected from the group consisting of magnesium, aluminum, zinc and alloys thereof;
b) A cathode comprising on a skeletal frame, at least one basic copper salt selected from the list comprising basic copper sulfate and basic copper carbonate; the cathode further comprising a soluble, ionically conductive material;
c) at least one cavity separating said cathode and said at least one anode;
d) a housing surrounding said at least one anode, cathode and cavity;
e) a lower aperture at the base of the housing for ingress of water and for expelling of heavier than water products of post immersion reaction; and,
f) an upper aperture located near top of the housing for venting hydrogen generated by the post immersion reaction, wherein said upper aperture is positioned a few millimeters below the top of housing to create a cavity within the housing, said hydrogen being expelled in bubbles defined by diameter of the upper aperture, and having a diameter of at least one millimeter.

US Pat. No. 10,693,148

CATHODE, METAL-AIR BATTERY INCLUDING THE CATHODE, AND METHOD OF PREPARING THE CATHODE

SAMSUNG ELECTRONICS CO., ...

1. A metal-air battery comprising:a cathode comprising a porous carbon structure comprising an intertwined network of a plurality of carbon nanostructures,
wherein the porous carbon structure comprises
small-diameter pores having an average diameter of about 25 nanometers to about 200 nanometers, and
large-diameter pores having an average diameter of greater than 200 nanometers to about 1.6 micrometers;
an anode; and
an electrolyte layer disposed between the cathode and the anode,
wherein the carbon nanostructures comprise at least one selected from a one-dimensional carbon nanostructure and a two-dimensional carbon nanostructure.

US Pat. No. 10,693,147

FUEL CELL AND METHOD FOR MANUFACTURING SAME

LG CHEM, LTD., Seoul (KR...

1. A fuel cell comprising:a cathode;
an anode; and
an electrolyte membrane provided between the cathode and the anode,
wherein at least one of the cathode and the anode includes an electrode catalyst,
wherein the electrode catalyst includes hollow metal nanoparticles including a hollow core unit and a shell unit including a first metal and a second metal,
wherein the hollow metal nanoparticles have an average particle diameter of 30 nm or less,
wherein the first metal is platinum (Pt) and the second metal is selected from the group consisting of Ni (nickel), cobalt (Co), iron (Fe), and copper (Cu),
wherein at least two major peaks representing atomic percentage of at least any one of the first metal and the second metal are present in elemental analysis data of the hollow metal nanoparticles,
wherein at least one major peak representing the atomic percentage is present within a 30% region from one end point of the particle diameter, and at least another major peak representing the atomic percentage is present within a 30% region from another end point of the particle diameter, and
wherein the shell unit is a single layer comprising the first metal and the second metal or the shell unit comprises a first shell formed with the first metal and a second shell formed with the second metal.

US Pat. No. 10,693,146

PRODUCTION METHOD FOR FINE METAL PARTICLES, PRODUCTION METHOD FOR FUEL CELL ELECTRODE CATALYST, SUPPORTED FINE METAL PARTICLE CATALYST, AND FUEL CELL ELECTRODE CATALYST

University of Yamanashi, ...

1. A method of manufacturing fine metal particles, comprising the step of:a hydrogen bubbling step to perform bubbling to a reaction solution, wherein:
the reaction solution is prepared by allowing seed fine metal particles in a dispersed state and a water-soluble noble metal precursor to co-exist in a water-containing solvent;
the seed fine metal particles are not soluble in the water-containing solvent;
the seed fine metal particles are an alloy of noble metal and non-noble metal;
the water-soluble noble metal precursor is selected from the group consisting of an acid of noble metal, a salt of noble metal, and a complex of noble metal;
the bubbling is performed with a reaction gas containing a hydrogen gas, and
a noble metal skin layer is formed so as to cover the seed fine metal particles.

US Pat. No. 10,693,145

CATALYST FOR AIR ELECTRODE FOR METAL-AIR SECONDARY BATTERY AND AIR ELECTRODE

NATIONAL UNIVERSITY CORPO...

1. A zinc-air secondary battery comprising:an air electrode including an oxygen evolution catalyst containing a brownmillerite-type transition metal oxide, said oxygen evolution catalyst causing an oxygen evolution reaction represented by Formula below:
4OH??O2+4e?;
a negative electrode containing zinc as a negative electrode active material; and
an electrolyte intervening between said air electrode and said negative electrode, said electrolyte being selected from the group consisting of an alkali aqueous solution and an aqueous solution containing zinc chloride or zinc perchlorate and in contact with said air electrode,
wherein said brownmillerite-type transition metal oxide is represented by General Formula (1) below:
A2B1B2O5  (1)
where A represents Ca, Sr, Ba, or a rare earth element (RE),
B1 is a metal atom that forms a tetrahedral structure together with oxygen atoms, and is at least one metal atom selected from the group consisting of Fe, Co, Ni, and Zn,
B2 is a metal atom that forms an octahedral structure together with oxygen atoms, and is at least one metal atom selected from the group consisting of Fe, Co, Cr, Ni, Ti, and Cu, and
one of said B1 and B2 contains Co.

US Pat. No. 10,693,144

METHOD FOR PRODUCING CATALYST INK, AND CATALYST COMPOSITE

TOYOTA JIDOSHA KABUSHIKI ...

6. A method for producing a catalyst ink for a catalyst composite in which a catalyst is supported on a carbon support with pores, comprising the steps of:controlling a hydrophilic pores rate of the carbon support to 60% to 80%, and
dispersing an ionomer in the catalyst composite after the controlling,
wherein the step of controlling further includes the steps of:
firing the support in a temperature range of from 150° C. to 2600° C. in an oxygen-containing gas atmosphere, before the catalyst is supported on the support, and
wherein the oxygen-containing gas atmosphere is air atmosphere, dry air atmosphere or pure oxygen atmosphere, and
wherein the hydrophilic pores rate is calculated by the following formula (1) using a contact porosimetry method:
Hydrophilic pores rate (%)=(hydrophilic pores volume/total pores volume)×100.  Formula (1)

US Pat. No. 10,693,143

FUEL CELL

SUMITOMO ELECTRIC INDUSTR...

1. A fuel cell comprising:a cell structure including a first electrode, a second electrode, and an electrolyte layer interposed between the first electrode and the second electrode, the electrolyte layer containing an ionically conductive solid oxide;
a gas diffusion layer having a pair of main surfaces facing away from each other, the gas diffusion layer being disposed adjacent to the first electrode, a first main surface of the pair of main surfaces facing the first electrode, the gas diffusion layer supplying a gas to the first electrode; and
a gas channel plate having a pair of plate surfaces facing away from each other, the gas channel plate being disposed adjacent to the gas diffusion layer, a first plate surface of the pair of plate surfaces facing a second main surface of the gas diffusion layer, the gas channel plate supplying the gas to the gas diffusion layer,
wherein the gas diffusion layer is formed of a porous metal body having a three-dimensional mesh-like skeleton,
the gas channel plate includes a first region, a second region, and a third region,
the first region, the second region, and the third region are arranged in order of the first region, the second region, and the third region from a second plate surface of the gas channel plate toward the first plate surface of the gas channel plate in a thickness direction,
a first channel extending through the first region in the thickness direction of the gas channel plate is provided in the first region,
a second channel extending through the second region in the thickness direction of the gas channel plate is provided in the second region,
a third channel extending through the third region in the thickness direction of the gas channel plate is provided in the third region,
the first channel extends to the second plate surface of the gas channel plate and communicates with the second channel,
the second channel communicates with the third channel,
the third channel extends to the first plate surface of the gas channel plate and communicates with the gas diffusion layer,
the first channel includes a slit extending from a center of the first plate surface toward an outer edge of the first plate surface at an boundary surface between the first region and the second region when viewed in a normal direction to the first plate surface, and
letting a total area of the first channel at the boundary surface between the first region and the second region when viewed in the normal direction be a first opening area S1,
letting a total area of the second channel at a boundary surface between the second region and the third region when viewed in the normal direction be a second opening area S2, and
letting a total area of the third channel at a boundary surface between the third region and the second main surface of the gas diffusion layer when viewed in the normal direction be a third opening area S3, a relationship S2

US Pat. No. 10,693,142

ALUMINUM NONWOVEN FIBER MATERIAL FOR CURRENT COLLECTOR OF ELECTRIC POWER STORAGE EQUIPMENT, MANUFACTURING METHOD THEREOF, ELECTRODE UTILIZING ALUMINUM NONWOVEN FIBER MATERIAL AND MANUFACTURING METHOD THEREOF

1. A manufacturing method for an aluminum nonwoven fiber material for a current collector of electric power storage equipment, comprising:a block forming procedure, extruding molten aluminum into a space through micropores and, moreover, making aluminum fibers formed by extrusion fall on a predetermined support surface, thereby forming an aluminum fiber block on the support surface; and
a short fiber removing procedure, performing removing treatment on aluminum short fibers shorter than a predetermined length from the aluminum fiber block, thereby treating the aluminum fiber block into the aluminum nonwoven fiber material for the current collector.

US Pat. No. 10,693,141

BIPOLAR BATTERY SEAL AND THERMAL RIB ARRANGEMENTS

Gridtential Energy, Inc.,...

1. A current collector assembly for a bipolar lead acid battery comprising:an electrically-conductive silicon substrate;
a frame coupled to the electrically-conductive silicon substrate, the electrically-conductive silicon substrate including one or more thin films which render a surface of the electrically-conductive silicon substrate electrically conductive and electrochemically stable in the presence of a lead acid electrolyte chemistry; and
a casing segment and a thermally-conductive rib, the thermally-conductive rib mechanically coupled to the casing segment and the frame, wherein the frame forms a spacer that isolates the thermally-conductive rib from the electrically-conductive silicon substrate electrically.

US Pat. No. 10,693,140

NEGATIVE ELECTRODE, AND SECONDARY BATTERY, BATTERY MODULE, AND BATTERY PACK INCLUDING THE SAME

LG CHEM, LTD., Seoul (KR...

1. A negative electrode comprising a negative electrode active material layer comprising:first active material particles each in a form of a secondary particle in which a plurality of primary particles are agglomerated; and
second active material particles,
wherein the second active material particles have an average particle size (D50) equal to or less than an average particle size (D50) of the primary particles,
the first active material particle is artificial graphite,
the second active material particle is a graphite-based particle, and
wherein the second active material particles have an average particle size (D50) of 10 ?m to 12 ?m.

US Pat. No. 10,693,139

CARBONACEOUS STRUCTURE AND METHOD FOR PREPARING THE SAME, ELECTRODE MATERIAL AND CATALYST INCLUDING THE CARBONACEOUS STRUCTURE, AND ENERGY STORAGE DEVICE INCLUDING THE ELECTRODE MATERIAL

KOREA ADVANCED INSTITUTE ...

1. A carbonaceous structure, comprising one or more hollow internal compartments,wherein each of the hollow internal compartments is connected through to outside and to the one or more hollow internal compartments adjacent thereto through one or more open porous channels formed in the carbonaceous structure, and
the carbonaceous structure includes a carbonaceous matrix.

US Pat. No. 10,693,138

CATHODE MATERIAL FOR LITHIUM-ION SECONDARY BATTERY, CATHODE FOR LITHIUM-ION SECONDARY BATTERY, AND LITHIUM-ION SECONDARY BATTERY

SUMITOMO OSAKA CEMENT CO....

1. A cathode material for a lithium-ion secondary battery,the cathode material comprising:
secondary particles which are granulated cathode active material particles, wherein
the cathode active material particles include central particles represented by general formula LixFeyMzPO4, wherein M represents at least one element selected from the group consisting of Mg, Ca, Co, Sr, Ba, Ti, Zn, B, Al, Ga, In, Si, Ge, and rare earth elements, 0.95?x?1.10, 0.80?y?1.10, and 0.00?z?0.20, and a carbonaceous film that coats surfaces of the central particles,
a particle size distribution of the secondary particles has at least two peaks, wherein the particle size distribution has a maximum value of a relative particle amount (%) on a fine particle side and a maximum value of a relative particle amount (%) on a coarse particle side,
a particle diameter at which the relative particle amount (%) is maximized on the fine particle side in the particle size distribution is included in a range A which is 0.70 ?m or more and 2.00 ?m or less,
a particle diameter at which the relative particle amount (%) is maximized on the coarse particle side in the particle size distribution is included in a range B which is 7.00 ?m or more and 15.00 ?m or less, and
a difference between the maximum values of the relative particle amount (%) is 2.00% or more and 6.00% or less, wherein the maximum value on the fine particle side corresponds to a particle diameter of the secondary particles at which the relative particle amount is maximized while the particle diameter is in the range A, and the maximum value on the coarse particle side corresponds to a particle diameter of the secondary particles at which the relative particle amount of the secondary particles is maximized while the particle diameter is in the range B.

US Pat. No. 10,693,137

FUNCTIONALIZED BORON NITRIDE MATERIALS AS ELECTROACTIVE SPECIES IN ELECTROCHEMICAL ENERGY STORAGE DEVICES

Boron Nitride Power, LLC,...

1. An electrochemical energy storage device comprising:a positive electrode including a first electrode potential, the positive electrode comprising:
a positive electrode current collector;
a porous, electrically and ionically conducting matrix contacting the positive electrode current collector; and
covalently functionalized boron nitride nanoparticles embedded in the porous, electrically and ionically conducting matrix, both electrons and ions are conducted to the functionalized boron nitride nanoparticles;
a negative electrode including a second electrode potential that is more negative than the first electrode potential of the positive electrode;
at least one conductor ionically connecting the positive electrode to the negative electrode, the conductor transporting positive ions released by the negative electrode during a discharge cycle of the electrochemical energy storage device and absorbed by the negative electrode during a charge cycle,
the covalently functionalized boron nitride nanoparticles being functionalized with a reaction product of Lewis base functional groups of the covalently functionalized boron nitride nanoparticles and Lewis acids.

US Pat. No. 10,693,136

LITHIUM COMPLEX OXIDE FOR LITHIUM SECONDARY BATTERY POSITIVE ACTIVE MATERIAL AND METHOD OF PREPARING THE SAME

ECOPRO BM CO., LTD., Che...

1. A lithium complex oxide secondary particle which is formed by coagulation of a plurality of primary particles and configured to satisfy a relation as follows,d1>d2  
wherein
the d1 is an interplanar distance of a crystalline structure in a primary particle locating in the internal part of secondary particle among the plurality of primary particles measured from diffraction patterns, and
the d2 is an interplanar distance of a crystalline structure in a primary particle locating on a surface part of the secondary particle measured from diffraction patterns,
wherein the surface part of the secondary particle has a gradient of concentration of Co ions,
wherein a boundary of the primary particle located in the internal part of secondary particle has a gradient of concentration of Co ions, and
wherein a boundary of the primary particle located on the surface part of the secondary particle has a gradient of concentration of Co ions.

US Pat. No. 10,693,135

METHOD FOR PRODUCING COMPOSITE, AND NEGATIVE ELECTRODE MATERIAL FOR LITHIUM ION BATTERY

SHOWA DENKO K.K., Tokyo ...

1. A production method for a composite of fine particles (A) and carbon particles (B), comprising the steps of:mixing fine particles (A) formed of a substance comprising at least one kind of Si, Sn, Al, Ge and In; and molten pitch at a temperature of 275° C. or higher, to obtain a mixture 1;
solidifying the mixture 1 to obtain a solidified mixture 1;
pulverizing the solidified mixture 1 to obtain a pulverized product 2a;
dry-mixing the pulverized product 2a and carbon particles (B) to obtain a mixture 3a; and
firing the mixture 3a at a firing temperature of 800° C. or more and 1,200° C. or less, followed by pulverization.

US Pat. No. 10,693,134

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY AND METHOD FOR MANUFACTURING SAME

1. A secondary particle comprising agglomerated primary particles and a carbon-based conductive material for electrically connecting the agglomerated primary particles,wherein an average diameter of the primary particles is 30 to 300 nm,
wherein each of the primary particles comprises a silicon core and a shell of silicon oxide surrounding the core, and
wherein the amount of oxygen in the primary particles with respect to the total weight of the silicon and the silicon oxide in the primary particles is 9 to 20 wt %.

US Pat. No. 10,693,133

METHOD OF MANUFACTURING POSITIVE MATERIAL

Samsung SDI Co., Ltd., Y...

1. A method of manufacturing a positive active material, the method comprising:preparing a compound capable of reversibly intercalating and deintercalating lithium;
adding and mixing a sodium source and a sulfate source to the compound to obtain a powder mixture; and
heat-treating the powder mixture at a temperature in a range of about 600° C. to about 1,000° C. to obtain a positive active material including LiNaSO4 that is coated on at least a part of a surface of the compound capable of reversibly intercalating and deintercalating lithium or that blends with the compound capable of reversibly intercalating and deintercalating lithium.

US Pat. No. 10,693,132

ALL-SOLID-STATE BATTERY

TOYOTA JIDOSHA KABUSHIKI ...

1. An all solid battery comprising: a cathode active material layer, an anode active material layer, and a solid electrolyte layer formed between the cathode active material layer and the anode active material layer;wherein at least one of the cathode active material layer and the anode active material layer contains a sulfide solid electrolyte and a conductive auxiliary material;
the conductive auxiliary material includes a carbon material C1 having a carboxyl group on its surface; and
a weight ratio of the carboxyl group to overall of the carbon material C1 is 8 weight % or more.

US Pat. No. 10,693,130

NEGATIVE ELECTRODE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY

HITACHI CHEMICAL COMPANY,...

1. A lithium ion secondary battery, comprising:a positive electrode;
a negative electrode; and
an electrolyte,
wherein the negative electrode comprises:
a current collector; and
a negative electrode material layer provided on the current collector and comprising a negative electrode material (SiOx-C) and a carbonaceous electrode material (C),
wherein the negative electrode material (SiOx-C) comprises an oxide of silicon and silicon crystallites, and carbon over a part or a whole of a surface of the oxide of silicon, wherein the content of the carbon with respect to the whole negative electrode material (SiOx-C) is from 0.5 mass % to 4.5 mass %, wherein a crystallite size of the silicon crystallites is 2 nm or more and 8 nm or less, wherein the oxide of silicon is represented by a formula SiOx (x is 0

US Pat. No. 10,693,128

ELECTRODE FOR NONAQUEOUS ELECTROLYTE BATTERY, NONAQUEOUS ELECTROLYTE BATTERY INCLUDING THE SAME, AND BATTERY PACK

Kabushiki Kaisha Toshiba,...

1. An electrode for a nonaqueous electrolyte battery comprising:a current collector; and
an active material layer which includes an active material and is formed on the current collector,
wherein the active material layer includes a carbonaceous material and at least one of a plurality of silicon particles and a plurality of silicon oxide particles dispersed in the carbonaceous material,
wherein the active material layer has a plurality of cracks extending in a thickness direction of the active material layer,
wherein each of the plurality of cracks separates a first inner surface area of the active material layer and a second inner surface area of the active material layer along a two-dimensional plane perpendicular to the thickness direction of the active material layer, wherein the first inner surface area is opposed to the second inner surface area,
wherein the first inner surface area includes a first set of a plurality of silicon particles and a plurality of silicon oxide particles, the second inner surface area includes a second set of a plurality of silicon particles and a plurality of silicon oxide particles, and wherein each of the particles in the first set is separated from each and every one of the particles in the second set by at least 0.5 ?m,
wherein a length of at least one of the plurality of cracks is no less than one-third of a thickness of the electrode,
wherein a width of the at least one of the plurality of cracks in the direction perpendicular to the thickness direction of the active material layer is 0.5 ?m or more and 10 ?m or less, and
wherein the at least one of the plurality of cracks is formed in a planar shape.

US Pat. No. 10,693,127

ALKALINE STORAGE BATTERY

GS Yuasa International Lt...

1. An alkaline storage battery comprising:a positive electrode;
a negative electrode containing, as an active material, at least one of a metal capable of forming a dendrite and a metal compound thereof; and
an alkaline electrolyte,
wherein the alkaline electrolyte contains a compound which is a chain saturated hydrocarbon having a hydroxyl group and a functional group selected from the group consisting of a carboxyl group, a sulfone group and -CH(OH)-CH2(OH) and having a molecular weight of 400 or more and less than 220000 in an amount of 2.5 g or more and less than 15 g per 100 mL of the electrolyte, and
the compound has a plurality of monomer units, each of the plurality of monomer units being the following formula:

where R includes hydrogen, halogen or an alkyl group, and A or B in at least one of the plurality of monomer units is the hydroxyl group, and A or B in at least another one of the plurality of monomer units is the functional group selected from the group consisting of the carboxyl group, the sulfone group and -CH(OH)-CH2(OH) and wherein each remaining A and B in the formula is independently one selected from a group consisting of hydrogen, the hydroxyl group, a hydrophobic group and the functional group selected from the group consisting of the carboxyl group, the sulfone group and -CH(OH)-CH2(OH).

US Pat. No. 10,693,126

REDOX AND ION-ADSORPTION ELECTRODES AND ENERGY STORAGE DEVICES

The Regents of the Univer...

1. A method of forming an electrode, the method comprising:forming a current collector by treating a three-dimensional graphene-based conductive scaffold in an acid;
washing the current collector in a solvent comprising deionized water, acetone, water, or any combination thereof; and
depositing a layered double hydroxide onto the current collector to form an electrode;
wherein the layered double hydroxide comprises a metallic layered double hydroxide.

US Pat. No. 10,693,125

ALKALINE ELECTROCHEMICAL CELL WITH IMPROVED ANODE AND SEPARATOR COMPONENTS

Energizer Brands, LLC, S...

1. An alkaline electrochemical cell comprising:a cathode;
an anode comprising an anode active material; and
a non-conductive separator disposed between the cathode and the anode;
wherein:
from about 20% to about 50% by weight of the anode active material relative to a total amount of anode active material has a particle size of less than about 75 ?m, and less than about 20% by weight of the anode active material, relative to the total amount of the anode active material, has a particle size of greater than about 150 ?m; and
the separator comprises a unitary, cylindrical configuration having an open end, a side wall, and an integrally formed closed end disposed distally to the open end.

US Pat. No. 10,693,124

COMPOSITION FOR FORMING POSITIVE ELECTRODE OF SECONDARY BATTERY, POSITIVE ELECTRODE FOR SECONDARY BATTERY AND SECONDARY BATTERY MANUFACTURED USING THE SAME

LG Chem, Ltd., (KR)

1. A composition for forming a positive electrode of a secondary battery, comprising:a positive electrode active material, and a conductive material-dispersing agent composite having a particle size distribution D50 of 0.8 ?m to 1.2 ?m,
wherein the conductive material-dispersing agent composite is prepared by mixing a conductive material and a dispersing agent,
wherein the conductive material includes a carbon-based material, wherein the carbon-based material has a specific surface area of 130 m2/g or more and an oil absorption number of 220 ml/100 g or more, wherein the carbon-based material is included in an amount of 0.1 wt % to 2 wt % with respect to a total weight of the composition for forming the positive electrode,
wherein the dispersing agent includes a partially hydrogenated nitrile rubber which includes a repeat unit of a hydrogenated conjugated diene-derived structure at 20 wt % to 50 wt % with respect to the total weight of the rubber, and
wherein the partially hydrogenated nitrile rubber is acrylonitrile-butadiene rubber which includes a repeat unit of a structure of Formula 1 below, a repeat unit of a structure of Formula 2 below, a repeat unit of a structure of Formula 3 below and a repeat unit of a structure derived from an ester of ?, ?-unsaturated carboxylic acid, and
the acrylonitrile-butadiene rubber includes the repeat unit of the structure of Formula 3 below at 20 wt % to 50 wt % with respect to the total weight of the rubber:

US Pat. No. 10,693,122

METHOD FOR PREPARING ELECTRODE SLURRY

LG Chem, Ltd., (KR)

1. A method of preparing an electrode slurry, which comprises: preparing a mixed solution by mixing a binder, a conductive material, and an active material with a solvent (process 1); separating the mixed solution prepared through process 1 into layers (process 2); and removing a portion of the solvent from the mixed solution of process 2, which has been separated into layers (process 3), to form the electrode slurry,wherein the electrode slurry formed by the removal of the portion of the solvent in process 3 has a viscosity of 15,000 cP to 30,000 cP.

US Pat. No. 10,693,121

RECHARGEABLE BATTERY

Samsung SDI Co., Ltd., Y...

1. A rechargeable battery comprising:an electrode assembly comprising a first electrode and a second electrode, the first and second electrodes each comprising an electrode plate and an electrode uncoated region;
a case accommodating the electrode assembly;
a cap assembly coupled to the case to seal the case; and
current collecting members between the cap assembly and the electrode assembly and coupled to the electrode uncoated region of the first electrode and the electrode uncoated region of the second electrode, respectively, wherein the current collecting members each comprise a first current collector that faces one side of the cap assembly, a second current collector that contacts the electrode uncoated region, and a connecting portion that is offset toward one side of the first current collector and connects the first and second current collectors,
wherein each electrode plate defines a first edge facing the cap assembly,
wherein both current collecting members are located at the first edge,
wherein the electrode uncoated regions of both the first and second electrodes are spaced from each other and protrude in a height direction towards the cap assembly away from the first edge of the respective electrode plate, the electrode uncoated regions being located between the cap assembly and the electrode plates,
wherein the first current collector and the connecting portion face an end of the electrode plate of the first electrode and an end of the electrode plate of the second electrode,
wherein the electrode plates of the first electrode and the second electrode are completely below the electrode uncoated regions of both the first and second electrodes, and
wherein a distance between a portion of the first current collector that is closest to the cap assembly along the height direction and the cap assembly along the height direction is greater than a distance between a portion of the second current collector that is closest to the cap assembly along the height direction and the cap assembly along the height direction.

US Pat. No. 10,693,120

ENERGY STORAGE DEVICE

Robert Bosch GmbH, Stutt...

1. An energy storage device comprising:an electrode assembly formed of stacked plates; and
a container which accommodates the electrode assembly, wherein the container includes:
a body portion having an open end; and
a conductive terminal portion connected to the body portion, wherein the terminal portion includes a first portion and a second portion which sandwich end portions of the stacked plates therebetween, and wherein the conductive terminal portion closes the open end.

US Pat. No. 10,693,119

ACCUMULATOR AND METHOD FOR THE MANUFACTURE THEREOF

WYON AG, Appenzell Stein...

1. Accumulator for the storage and release of electrical energy, comprising:a) at least two positive electrodes, each with a contact terminal,
b) at least two negative electrodes, each with a contact terminal,
c) at least one contacting device having at least one contacting element which is arranged between two adjoining contact terminals and interconnects said two adjoining contact terminals in an electrically conductive manner,
d) a housing, which entirely accommodates the at least two positive electrodes, the at least two negative electrodes, and the at least one contacting device,
e) the accumulator comprises at least one cladding structure, which encloses the at least one contacting device,
wherein
f) the contacting device comprises a clamping device, which clamps the at least one contacting element to the at least two adjoining contact terminals.

US Pat. No. 10,693,118

SEPARATORS FOR FLAT PLATE BATTERIES, IMPROVED BATTERIES, AND RELATED METHODS

Daramic, LLC, Charlotte,...

4. A flat-plate lead acid battery comprising the separator of claim 1.

US Pat. No. 10,693,117

ELECTROCHEMICAL SYSTEMS WITH IONICALLY CONDUCTIVE AND ELECTRONICALLY INSULATING SEPARATOR

California Institute of T...

1. An electrochemical cell comprising:a positive electrode;
a first current collector pole in electronic communication with the positive electrode;
a negative electrode;
a second current collector pole in electronic communication with the negative electrode;
an ionically conductive and electronically insulating separator positioned between said positive electrode and said negative electrode;
a first electronically and ionically conductive layer positioned between said positive electrode or said negative electrode and said separator and in electronic contact with said negative electrode or positive electrode via an external third current collector pole; and
one or more electrolytes positioned between and provided in contact with said positive electrode and said negative electrode; wherein said one or more electrolytes are capable of conducting charge carriers;wherein said first electronically and ionically conductive layer comprises an electrochemically active material, and wherein the first electronically and ionically conductive layer is in electronic communication with the third current collector pole and configured to reduce or oxidize the positive electrode or the negative electrode via the third current collector pole and the first current collector pole or the second current collector pole; andwherein said first electronically and ionically conductive layer provides an electronic conductivity greater than or equal to 1 S/cm and provides an ionic resistance less than or equal to 10 ?cm2.

US Pat. No. 10,693,116

POROUS SEPARATOR FOR SECONDARY BATTERY AND MANUFACTURING METHOD THEREOF

SK Innovation Co., Ltd., ...

1. A porous separator comprising:an inorganic oxide layer formed on a porous substrate having an average pore diameter of 30 to 45 nm by an atomic layer deposition process,
wherein a thickness of the inorganic oxide layer is decreased in a direction from a surface of the porous substrate to a center thereof, and the following Relational Equations I and II are satisfied:
8?{(10ts+tr)×C}/100  [Relational Equation I]
(ts is time (sec) for injecting a metal precursor, tr is time (sec) for injecting an oxidant, and C is the number of repetitions of the atomic layer deposition process)
Th/Ts?0.80  [Relational Equation II]
(Ts is a thickness (nm) of the inorganic oxide layer on a surface of the porous separator, Th is a thickness (nm) of the inorganic oxide layer formed in internal pores at a position corresponding to ½ of a total thickness of the porous separator in a direction from the surface of the porous separator to the center of the porous separator), and
wherein the thickness of the inorganic oxide layer on the surface is 15.25 nm?Ts?30.0 nm and wherein a gas permeability of the porous separator is less than or equal to 525 (sec/100 cc).

US Pat. No. 10,693,113

BATTERY ELECTRODE AND SECONDARY BATTERY USING THE SAME

NINGDE AMPEREX TECHNOLOGY...

1. A battery electrode, comprising:an electrode tab;
a current collector;
a diaphragm, disposed on two sides of the current collector, the diaphragm comprising a groove on one of the two sides of the current collector configured to receive the electrode tab,
wherein the electrode tab is electrically connected with the current collector through the groove, the electrode tab comprises an embedded portion embedded in the groove and an exposed portion protruded outside the groove;
an active material coating layer is disposed directly on an upper surface of the embedded portion, wherein a sum of a thickness of the embedded portion and a thickness of the active material coating layer is less than or equal to a thickness of the diaphragm and there is no insulating adhesive tape on the active material coating layer.

US Pat. No. 10,693,112

BATTERY MODULE

PANASONIC INTELLECTUAL PR...

1. A battery module comprising:a plurality of cylindrical cells; and
a battery holder having a plurality of tubular accommodation portions for respectively accommodating the plurality of cylindrical cells,
wherein the battery holder includes, as the plurality of accommodation portions:
a plurality of first accommodation portions each having a substantially hexagonal hole; and
a plurality of second accommodation portions each having a substantially polygonal hole including a seven or more sided hole, and
wherein, in order to arrange the plurality of first accommodation portions and the plurality of second accommodation portions in a manner of log pile, second columns including the plurality of second accommodation portions are disposed on opposite sides in the battery holder so that a first column including the plurality of first accommodation portions is sandwiched between the second columns.

US Pat. No. 10,693,111

OUTER PACKAGING MATERIAL FOR ELECTRIC STORAGE DEVICE AND ELECTRIC STORAGE DEVICE USING THE SAME

TOPPAN PRINTING CO., LTD....

1. An outer packaging material for electric storage device having a structure comprising:at least a substrate layer, an adhesion layer, a metal foil layer, a sealant adhesion layer, and a sealant layer laminated in this order,
wherein the substrate layer is one made of (a) a polyamide film having a hot water shrinkage rate at 95° C. of less than 5% and a hot shrinkage rate at 180° C. of 4% to 16%, or (b) a polyester film having a hot water shrinkage rate at 95° C. of less than 5% and a hot shrinkage rate at 180° C. of 10% to 25%, wherein the outer packaging material further comprises an adhesion treatment layer between the substrate layer and the adhesion layer, the adhesion treatment layer is in direct physical contact with each of the substrate layer and the adhesion layer.

US Pat. No. 10,693,110

POUCH FILM FOR A BATTERY CELL SYSTEM

Robert Bosch GmbH, Stutt...

1. A pouch film (3) for a battery cell system (1), the pouch film (3) having a longitudinal direction and comprising mutually separate pockets (12) for insertion of electrode assemblies (5), the pockets (12) being impermeable to electrolyte, and the pockets (12) being physically connected to one another in a foldable manner via the pouch film (3), wherein the pouch film (3) has a fold pattern between the pockets (12), wherein the fold pattern has a central region (15a) substantially parallel to the longitudinal direction and flanking regions (15b) surrounding the central region (15a) and substantially orthogonal to the central region (15a), and wherein the flanking regions (15b) are separate from the pockets (12).

US Pat. No. 10,693,109

METHOD OF MANUFACTURING SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE

Samsung Display Co., Ltd....

1. A method of manufacturing a substrate for a display device, the method comprising:preparing a supporting substrate having a first surface and a second surface opposite to the first surface;
forming a blocking film on the first surface of the supporting substrate;
forming a substrate layer on the supporting substrate to cover the blocking film;
removing at least a portion of the substrate layer to space the blocking film apart from the substrate layer by a predetermined distance; and
separating the substrate layer from the supporting substrate.

US Pat. No. 10,693,108

ELECTROLUMINESCENT DISPLAY DEVICE

LG Display Co., Ltd., Se...

1. An electroluminescent display device, comprising:an overcoat layer above a substrate including a plurality of subpixel regions;
a first electrode on the overcoat layer and disposed in each of the plurality of subpixel regions, the first electrode including a plurality of holes exposing the overcoat layer within respective subpixel regions;
at least one light extraction pattern in at least one of the plurality of holes and on the overcoat layer;
an emission layer on the first electrode and the at least one light extraction pattern; and
a second electrode on the emission layer.

US Pat. No. 10,693,107

ORGANIC ELECTROLUMINESCENCE DEVICE HAVING RGB PIXEL AREAS

BEIJING VISIONOX TECHNOLO...

1. An organic electroluminescence device having RGB pixel areas, comprising a substrate, with a first electrode layer, a plurality of organic layers and a second electrode layer formed in sequence on the substrate, wherein, the organic layers include a first organic functional layer, a light emitting layer and a second organic functional layer arranged upon the first electrode layer, the light emitting layer comprises a red light emitting layer, a green light emitting layer and a blue light emitting layer,wherein,
the organic electroluminescence device further comprises optical compensation layers including a red light optical compensation layer arranged between the red light emitting layer and the first organic functional layer as well as a green light optical compensation layer arranged between the green light emitting layer and the first organic functional layer, the optical compensation layers are made of a first hole transport material and a second hole transport material, the first hole transport material has a triplet-state energy level ?2.48 eV and a HOMO energy level ??5.5 eV, the second hole transport material has a HOMO energy level >?5.5 eV, and the difference between the HOMO energy level of the first hole transport material and the HOMO energy level of the second hole transport material is ?0.2 eV;
wherein a total thickness of the red light optical compensation layer plus the red light emitting layer, a total thickness of the green light optical compensation layer plus the green light emitting layer, and a thickness of the blue light emitting layer are substantially equal;
wherein top surfaces of the red light emitting layer, the green light emitting layer and the blue light emitting layer are substantially coplanar.

US Pat. No. 10,693,106

DISPLAY DEVICE

Japan Display Inc., Toky...

1. A display device comprising:a first substrate;
a plurality of organic light emitting elements on the first substrate; and
a sealing film covering the organic light emitting elements, the sealing film including a first barrier layer, a base layer including silicon oxide or amorphous silicon on the first barrier layer, an organic layer on the base layer, and a second barrier layer on the base layer and the organic layer, a first thickness of the first barrier layer being thicker than a second thickness of the base layer,
wherein the first barrier layer includes silicon nitride or silicon oxynitride, and the second barrier layer includes silicon nitride or silicon oxynitride,
the base layer and the second barrier layer are in contact with each other,
the base layer and the first barrier layer are in contact with each other,
the organic layer and the base layer are in contact with each other,
the organic layer and the second barrier layer are in contact with each other, andfurther comprising:a filler on the sealing film; and
a second substrate on the filler.

US Pat. No. 10,693,105

OLED PACKAGING METHOD

WUHAN CHINA STAR OPTOELEC...

1. An organic light emitting display (OLED) packaging method, comprising the following steps:Step 1: providing a OLED device and forming a first inorganic layer on the OLED device such that the first inorganic layer covers the OLED device;
Step 2: forming an organic photoresist layer on the first inorganic layer;
Step 3: subjecting the organic photoresist layer to exposure and development such that a developed and removed portion of the organic photoresist layer defines an outer bound confinement area on the first inorganic layer;
Step 4: depositing a dense material layer on the organic photoresist layer and the outer bound confinement area of the first inorganic layer, such that the dense material layer has a thickness less than a thickness of the organic photoresist layer to form a substrate-to-be-peeled-off;
Step 5: dipping the substrate-to-be-peeled-off, in the entirety thereof, in a photoresist peeling solution so as to remove the organic photoresist layer and at the same time peel off a portion of the dense material layer that is located on the organic photoresist layer in combination with the organic photoresist layer, while preserving a portion of the dense material layer that is located on the outer bound confinement area of the first inorganic layer to form a first outer bound confinement layer;
Step 6: coating an organic material on an area of the first inorganic layer that is enclosed by the first outer bound confinement layer such that the organic material so coated has a thickness less than a thickness of the first outer bound confinement layer so as to form a first organic layer; and
Step 7: forming a second inorganic layer on the first organic layer and the first outer bound confinement layer.

US Pat. No. 10,693,104

ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR PRODUCING SAME

Sakai Display Products Co...

1. An organic electro-luminescence (EL) device including an active region that includes a plurality of organic EL elements and also including a peripheral region located in a region other than the active region, the organic EL device comprising:an element substrate including a substrate, and the plurality of organic EL elements supported by the substrate; and
a thin film encapsulation structure covering the plurality of organic EL elements,
wherein the thin film encapsulation structure includes a first inorganic barrier layer, an organic barrier layer in contact with a top surface of the first inorganic barrier layer, and a second inorganic barrier layer in contact with the top surface of the first inorganic barrier layer and a top surface of the organic barrier layer,
wherein the peripheral region includes a first protruding structure supported by the substrate, the first protruding structure including a portion extending along at least one side of the active region, and also includes an extending portion, of the first inorganic barrier layer, extending onto the first protruding structure, the first protruding structure having a height larger than a thickness of the first inorganic barrier layer,
wherein the second inorganic barrier layer does not overlap the first protruding structure as seen in a direction normal to the substrate,
wherein the element substrate includes a plurality of gate bus lines each connected with any of the plurality of organic EL elements, and a plurality of source bus lines each connected with any of the plurality of organic EL elements,
wherein the peripheral region includes a plurality of terminals provided adjacent to a certain side of the active region, and a plurality of lead wires connecting each of the plurality of terminals and either one of the plurality of gate bus lines or either one of the plurality of source bus lines to each other, and
wherein the first protruding structure does not include any portion that overlaps the plurality of lead wires as seen in a direction normal to the substrate.

US Pat. No. 10,693,103

LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF, ELECTRONIC APPARATUS

BOE Technology Group Co.,...

1. A light-emitting device, comprising:a base substrate;
a light-emitting unit on the base substrate;
an encapsulation cover plate opposite to the base substrate and covering the light-emitting unit; and
a light-guiding structure at a light exiting side of the light-emitting unit and comprising a plurality of first structures,
wherein the light-guiding structure is configured to enable light emitted by the light-emitting unit to be incident into the first structures and enable the light to exit from the encapsulation cover plate,
wherein the light-guiding structure further comprises a second structure, wherein the second structure covers side surfaces of each of the first structures, but the second structure does not fill in all space among the plurality of first structures, and
wherein a refractive index of a material of the second structure is less than a refractive index of a material of the first structures.

US Pat. No. 10,693,102

LIGHT EMITTING DEVICE AND TRANSPARENT ELECTRODE THEREOF, AND TRANSPARENT LIGHT EMITTING DEVICE HAVING A LIGHT-TRANSMITTING AREA AND A LIGHT-OPAQUE AREA

Industrial Technology Res...

1. A light emitting device, comprising:a first electrode;
a second electrode; and
a light emitting layer disposed between the first electrode and the second electrode; wherein at least one of the first electrode and the second electrode is a transparent electrode, and the transparent electrode comprising:
a transparent conducting layer; and
an injection layer disposed between the transparent conducting layer and the light emitting layer, wherein a material of the injection layer is an alkali metal salt doped with a pure metal or an alloy thereof,
wherein the light emitting device having a light-transmitting area and a light-opaque area, the light emitting layer is disposed between first electrode and the second electrode in the light-opaque region, the transparent electrode is extended to the light-transmitting area, and a transmittance of the light-transmitting area is greater than 50%.

US Pat. No. 10,693,101

OLED PANEL HAVING AUXILIARY CATHODE

BOE TECHNOLOGY GROUP CO.,...

1. An organic light emitting diode (OLED) panel, comprising:a substrate;
a plurality of OLED devices disposed on the substrate, wherein the OLED devices comprise a cathode and have light emitting areas respectively; and
an auxiliary cathode,
wherein the auxiliary cathode is disposed on the cathode of the OLED devices in electrical contact with the cathode and the auxiliary cathode is at least partially located in the light emitting areas of the OLED devices,
a material of the auxiliary cathode is a transparent conductive material, and
a light emergent surface of the auxiliary cathode protrudes outward along a light emergent direction of the OLED device, a protruding portion of the auxiliary cathode completely covers the light emitting areas of the OLED devices, and the light emergent surface is a surface of the protruding portion away from the substrate.

US Pat. No. 10,693,100

DISPLAY DEVICE

INNOLUX CORPORATION, Mia...

1. A display device, comprising:a substrate;
a driving transistor, disposed on the substrate, wherein the driving transistor comprises a gate electrode;
a first electrode, disposed on the gate electrode; and
an insulation layer, disposed on the first electrode, wherein the insulation layer has an opening, and the opening exposes a portion of the first electrode,
wherein in view of a first direction perpendicular to the substrate, the first electrode partially overlaps the gate electrode to form a first portion, and the first portion is separated from the opening.

US Pat. No. 10,693,099

ELECTROLUMINESCENT DISPLAY DEVICE HAVING A CHARGE GENERATING LAYER BETWEEN A PLURALITY OF LIGHT EMITTING LAYERS

LG DISPLAY CO., LTD., Se...

1. An electroluminescent display device, comprising:a lower substrate;
an insulating layer positioned on the lower substrate and including a plurality of trenches; and
a plurality of subpixels positioned on the insulating layer and including:
a first electrode on the insulating layer;
a first light emitting layer on the first electrode;
a charging generating layer on the first light emitting layer;
a second light emitting layer on the charging generating layer; and
a second electrode on the second light emitting layer,
wherein the plurality of subpixels includes a first subpixel in which only one of the first and second light emitting layers emits light by a contact between the charging generating layer and the second electrode in one of the plurality of trenches, and a second subpixel in which both of the light emitting layers emit light by a separation of the charging generating layer and the second electrode in another one of the plurality of trenches.

US Pat. No. 10,693,098

PHOSPHORESCENT EMITTERS AND EXTRINSIC METHOD FOR INCREASING STABILITY THEREOF

RUTGERS, THE STATE UNIVER...

1. A device, comprising:at least one substantially planar organic layer having an organic or organometallic material radiative in an emission band and having at least one nanostructure configured to have local electric fields at wavelengths that spectrally and spatially overlap with said emission band of said radiative organic material.

US Pat. No. 10,693,097

DISPLAY DEVICE INCLUDING TWO DISPLAY ELEMENTS, DISPLAY MODULE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING DISPLAY DEVICE

Semiconductor Energy Labo...

1. A display device comprising:a first display element;
a second display element;
an insulating layer;
a first transistor; and
a second transistor,
wherein the first display element comprises a first pixel electrode configured to reflect visible light and a liquid crystal layer,
wherein the second display element is configured to emit visible light,
wherein the second display element comprises a second pixel electrode and a common electrode,
wherein the first pixel electrode is on an opposite side of the insulating layer from the second pixel electrode,
wherein the liquid crystal layer is on an opposite side of the first pixel electrode from the insulating layer,
wherein the common electrode is on an opposite side of the second pixel electrode from the insulating layer,
wherein the liquid crystal layer comprises a first region overlapping with the first pixel electrode and a second region overlapping with the second display element,
wherein a thickness of the liquid crystal layer in the first region is smaller than a thickness of the liquid crystal layer in the second region,
wherein the first transistor is configured to control driving of the first display element,
wherein the second transistor is configured to control driving of the second display element, and
wherein the insulating layer comprises a portion serving as a gate insulating layer of the first transistor and a portion serving as a gate insulating layer of the second transistor.

US Pat. No. 10,693,096

EL ELEMENT AND METHOD FOR MANUFACTURING EL ELEMENT WITH A LIGHT-EMITTING LAYER INCLUDING AN IONIC LIQUID, A PHOSPHORESCENT MATERIAL, AND A FLUORESCENT MATERIAL

SHARP KABUSHIKI KAISHA, ...

1. An EL element comprising:a red-light-emitting region, a green-light-emitting region, and a blue-light-emitting region;
a first electrode and a second electrode that are in each of the red-light-emitting region, the green-light-emitting region, and the blue-light-emitting region;
EL layers provided between the first electrode and the second electrode in each of the red-light-emitting region, the green-light-emitting region, and the blue-light-emitting region;
a light-emitting layer included in each of the EL layers; and
a bank including portions provided between adjacent pairs of the light-emitting layers, wherein
the EL layers include a red-light-emitting EL layer, a green-light-emitting EL layer, and a blue-light-emitting EL layer,
distances between an upper surface of the red-light-emitting EL layer and an upper surface of the bank, between an upper surface of the green-light-emitting EL layer and the upper surface of the bank, and between an upper surface of the blue-light-emitting EL layer and the upper surface of the bank are respectively arranged in descending order of length,
each of the light-emitting layers includes an ionic liquid, a phosphorescent material, and a fluorescent material,
a lowest triplet excited state energy level of the phosphorescent material is higher than a lowest triplet excited state energy level of the fluorescent material, and a lowest singlet excited state energy level of the fluorescent material is higher than a lowest singlet excited state energy level of the phosphorescent material, and
the fluorescent material and the phosphorescent material are homogeneously dispersed in a liquid film of the ionic liquid.

US Pat. No. 10,693,095

LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

Semiconductor Energy Labo...

1. A light-emitting element comprising:a pair of electrodes; and
an electroluminescence layer between the pair of electrodes,
wherein the electroluminescence layer comprises a light-emitting layer,
wherein the light-emitting layer comprises a first material and a second material,
wherein the first material comprises a condensed heterocyclic skeleton having a pyrimidine skeleton,
wherein the second material is capable of emitting fluorescence,
wherein light emitted from the light-emitting layer comprises light emitted from the second material,
wherein light emitted from the light-emitting layer comprises delayed fluorescence,
wherein a triplet excitation energy level of the first material is higher than a triplet excitation energy level of the second material,
wherein the first material is capable of exhibiting thermally activated delayed fluorescence at room temperature,
wherein a singlet excitation energy level of the first material is higher than a singlet excitation energy level of the second material, and
wherein an emission of the first material comprises a region overlapping with an absorption band on a longest wavelength side in an absorption spectrum of the second material.

US Pat. No. 10,693,094

LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

Semiconductor Energy Labo...

1. A light-emitting element comprising:a pair of electrodes; and
a light-emitting layer between the pair of electrodes, the light-emitting layer comprising a guest material and a host material,
wherein the guest material is capable of converting triplet excitation energy into light emission,
wherein a HOMO level of the guest material is higher than a HOMO level of the host material,
wherein an energy difference between a LUMO level of the guest material and the HOMO level of the guest material is larger than an energy difference between a LUMO level of the host material and the HOMO level of the host material,
wherein an energy difference between the LUMO level of the host material and the HOMO level of the guest material is larger than or equal to a transition energy calculated from an absorption edge of an absorption spectrum of the guest material,
wherein the energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than the transition energy calculated from the absorption edge of the absorption spectrum of the guest material by 0.4 eV or more,
wherein the host material is a compound represented by formula (GO),

wherein A represents a substituted or unsubstituted benzofuropyrimidine skeleton or a substituted or unsubstituted benzothienopyrimidine skeleton,
wherein R1 to R15 independently represents any of hydrogen, a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 7 carbon atoms, and a substituted or unsubstituted aryl group having 6 to 13 carbon atoms, and
wherein Ar1 represents an arylene group having 6 to 25 carbon atoms or a single bond.

US Pat. No. 10,693,093

LIGHT-EMITTING ELEMENT

Semiconductor Energy Labo...

1. A light-emitting device comprising a light-emitting layer, the light-emitting layer comprising:a phosphorescent compound serving as a guest material; and
a substance exhibiting thermally activated delayed fluorescence and serving as a host material, wherein a molar absorption coefficient of a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound is higher than or equal to 2000 M?1·cm?1, and
wherein a peak of a fluorescence spectrum of the substance exhibiting the thermally activated delayed fluorescence overlaps with the lowest-energy-side absorption band.

US Pat. No. 10,693,092

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

Ricoh Company, Ltd., Tok...

1. A photoelectric conversion element comprising:a substrate;
a first electrode;
an electron transport layer comprising a photosensitizing compound;
a hole transport layer comprising:
a basic compound A represented by the following formula (1):

where each of R1 and R2 independently represents an alkyl group or an aromatic hydrocarbon group, or R1 and R2 share bond connectivity to form a nitrogen-containing heterocyclic ring; and
an ionic compound B represented by the following formula (2):

where X+ represents a counter cation; and
a second electrode,
wherein a molar ratio (A:B) between of the basic compound A and the ionic compound B is from 10:1 to 10:4.

US Pat. No. 10,693,091

DISPLAY APPARATUS

Samsung Display Co., Ltd....

1. A display apparatus comprising:a base layer comprising device counterparts and bridges, the bridges being located around the device counterparts and connecting the device counterparts to each other;
an inorganic insulating layer located over the base layer and having openings exposing at least a portion of at least one of the bridges;
organic layers filling the openings;
wires located over the organic layers;
display devices located over the device counterparts; and
encapsulation films each of which has a form of an island to correspond to a corresponding one of the device counterparts, each of the encapsulation films comprising:
a first inorganic encapsulation film covering a corresponding one of the display devices;
an organic encapsulation film located over the first inorganic encapsulation film; and
a second inorganic encapsulation film covering the organic encapsulation film and contacting the first inorganic encapsulation film outside of the organic encapsulation film.

US Pat. No. 10,693,090

FLEXIBLE DISPLAY PANEL AND DISPLAY DEVICE

SHANGHAI TIANMA MICRO-ELE...

1. A flexible display panel, comprising:a flexible substrate; and
an inorganic film layer located on the flexible substrate, wherein
the inorganic film layer comprises a first portion and a second portion, the first portion is connected with the second portion, the first portion has a first thickness T1, the second portion has a second thickness T2, and T1 the first portion comprises at least one first sub-portion and at least one second sub-portion, the first sub-portion is connected with the second sub-portion at a boundary line extending in a first direction, a length of an end of the first sub-portion at the boundary line in first direction is the same as a length of an end of the second sub-portion at the boundary line in the first direction such that the end of the first sub-portion smoothly joins with the end of the second sub-portion at the boundary line, and from the boundary line, a dimension of the second sub-portion in the first direction gradually changes in a direction away from the first sub-portion.

US Pat. No. 10,693,089

FLEXIBLE DISPLAY DEVICE

SHANGHAI TIANMA MICRO-ELE...

1. A flexible display device, comprising: a flexible substrate comprising a first portion, a second portion, and a bending portion connecting the first portion to the second portion, wherein a thickness of the flexible substrate is T;a plurality of display pixels located at a side of the first portion of the flexible substrate;
a supporting layer located at a side of the flexible substrate facing away from the plurality of display pixels, and comprising a first supporting layer, the first portion defined to be the portion of the flexible substrate abutting the first supporting layer, and a second supporting layer corresponding to the second portion, the second portion defined to be the portion of the flexible substrate abutting the second supporting layer,
wherein a thickness of the first supporting layer is T1, a thickness of the second supporting layer is T2, and a width of the bending portion is W, a bending diameter is equal to (2T+T1+T2), wherein W?(2T+T1+T2) (?+2)/2;
wherein the first supporting layer comprises a first protection layer an auxiliary component arranged along a direction in which the flexible substrate faces away from the plurality of display pixels and a composite material layer arranged between the first protection layer and the auxiliary component; and
the second supporting layer comprises a second protection layer in the direction in which the flexible substrate faces away from the plurality of display pixels.

US Pat. No. 10,693,088

METHOD FOR PRODUCING AN OPTOELECTRONIC DEVICE, AND AN OPTOELECTRONIC DEVICE PRODUCED BY THE METHOD

OSRAM OLED GMBH, Regensb...

1. A method for producing an optoelectronic device, the method comprising in the following order:providing a substrate, having a first state having a non-planar shape,
reshaping the substrate into a second state by fixing the substrate in the second state by a releasable mechanical connection comprising at least one clamp,
wherein the at least one clamp comprises a shape memory material,
wherein the second state has a planar or substantially planar shape,
forming at least one optoelectronic component on the substrate,
reshaping the substrate into a third state,
wherein the third state is identical or substantially identical to the first state.

US Pat. No. 10,693,087

DISPLAY PANEL WITH A METAL WIRE ARRAY DISPOSED ON THE BENDING REGION OF A FLEXIBLE SUBSTRATE

Shenzhen China Star Optoe...

1. A display panel having a display region and a packaging region disposed outside the display region, comprising:an array substrate including a glass substrate having top and bottom surfaces and at least a side surface, a flexible substrate disposed on the top surface of the glass substrate, and a scanning line and a data line disposed on the flexible substrate, wherein a bending region extending outside the packaging region is disposed outside the packaging region at at least one side of the flexible substrate, a metal wire array for connecting the scanning line and the data line of the array substrate with row driving and column driving chips is disposed in the bending region on the flexible substrate, and the bending region is bent toward the side surface of the glass substrate and bonded to the side surface of the glass substrate,
wherein the glass substrate is selectively cut by laser cutting between the bending region and the packaging region, and a part of the glass substrate in the bending region is stripped off the flexible substrate after being cut by the laser cutting, so that the bending region is bent toward the side surface of the glass substrate and is bonded to the side surface of the glass substrate.

US Pat. No. 10,693,086

ORGANOMETALLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE ORGANOMETALLIC COMPOUND, AND DIAGNOSTIC COMPOSITION INCLUDING THE ORGANOMETALLIC COMPOUND

SAMSUNG ELECTRONICS CO., ...

1. An organometallic compound represented by Formula 1:
wherein, in Formula 1,
M is beryllium (Be), magnesium (Mg), aluminum (Al), calcium (Ca), titanium (Ti), manganese (Mn), cobalt (Co), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), zirconium (Zr), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), rhenium (Re), platinum (Pt), or gold (Au),
X1 to X3 are each independently N or C,
X4 is O, S, B(R5), N(R5), P(R5), C(R5)(R6), Si(R5)(R6), Ge(R5)(R6), C(?O), B(R5)(R6), N(R5)(R6), or P(R5)(R6),
X5 is O, S, B(R?), N(R?), P(R?), C(R?)(R?), Si(R?)(R?), Ge(R?)(R?), C(?O), B(R?)(R?), N(R?)(R?), or P(R?)(R?),
two bonds selected from a bond between X5 and M, a bond between X2 and M, a bond between X3 and M, and a bond between X4 and M are each a covalent bond, and the other bonds selected from a bond between X5 and M, a bond between X2 and M, a bond between X3 and M, and a bond between X4 and M are each a covalent bond are each a coordinate bond,
rings CY1 to CY3 are each independently selected from a C5-C30 carbocyclic group and a C1-C30 heterocyclic group,
T1 and T2 are each independently selected from a single bond, a double bond, *—N(R7)—*?, *—B(R7)—*?, *—P(R7)—*?, *—C(R7)(R8)—*?, *—Si(R7)(R8)—*?, *—Ge(R7)(R8)—*?, *—S—*?, *—Se—*?, *—O—*?, *—C(?O)—*?, *—S(?O)—*?, *—S(?O)2—*?, *—C(R7)=*?, *?C(R7)—*?, *—C(R7)?C(R8)—*?, *—C(?S)—*?, and *—C?C—*?, T3 is *—C(?O)—*? or *—C(?S)—*?, and * and *? each indicate a binding site to a neighboring atom,
R7 and R8 are optionally linked via a single bond, a double bond, or a first linking group to form a substituted or unsubstituted C5-C30 carbocyclic group or a substituted or unsubstituted C1-C30 heterocyclic group,
R1 to R3, R?, R?, and R5 to R8 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, —SF5, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —N(Q1)(Q2), —Si(Q3)(Q4)(Q5), —B(Q6)(Q7), and —P(?O)(Q8)(Q9),
a1 to a3 are each independently an integer from 0 to 20,
two of a plurality of neighboring groups R1 are optionally linked to form a substituted or unsubstituted C5-C30 carbocyclic group or a substituted or unsubstituted C1-C30 heterocyclic group,
two of a plurality of neighboring groups R2 are optionally linked to form a substituted or unsubstituted C5-C30 carbocyclic group or a substituted or unsubstituted C1-C30 heterocyclic group,
two of a plurality of neighboring groups R3 are optionally linked to form a substituted or unsubstituted C5-C30 carbocyclic group or a substituted or unsubstituted C1-C30 heterocyclic group,
two or more neighboring groups selected from groups R1 to R3 are optionally linked to form a substituted or unsubstituted C5-C30 carbocyclic group or a substituted or unsubstituted C1-C30 heterocyclic group,
at least one substituent of the substituted C5-C30 carbocyclic group, the substituted C1-C30 heterocyclic group, the substituted C1-C60 alkyl group, the substituted C2-C60 alkenyl group, the substituted C2-C60 alkynyl group, the substituted C1-C60 alkoxy group, the substituted C3-C10 cycloalkyl group, the substituted C1-C10 heterocycloalkyl group, the substituted C3-C10 cycloalkenyl group, the substituted C1-C10 heterocycloalkenyl group, the substituted C6-C60 aryl group, the substituted C6-C60 aryloxy group, the substituted C6-C60 arylthio group, the substituted C1-C60 heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group is selected from:
deuterium, —F, —Cl, —Br, —I, —CD3, —CD2H, —CDH2, —CF3, —CF2H, —CFH2, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, —CD3, —CD2H, —CDH2, —CF3, —CF2H, —CFH2, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q11)(Q12), —Si(Q13)(Q14)(Q15), —B(Q16)(Q17), and —P(?O)(Q18)(Q19);
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group;
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, —CD3, —CD2H, —CDH2, —CF3, —CF2H, —CFH2, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —N(Q21)(Q22), —Si(Q23)(Q24)(Q25), —B(Q26)(Q27), and —P(?O)(Q28)(Q29); and
—N(Q31)(Q32), —Si(Q33)(Q34)(Q35), —B(Q36)(Q37), and —P(?O)(Q38)(Q39), and
Q1 to Q9, Q11 to Q19, Q21 to Q29, and Q31 to Q39 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazine group, a hydrazone group, a carboxylic acid group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C1-C60 alkyl group substituted with at least one selected from deuterium, a C1-C60 alkyl group, and a C6-C60 aryl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryl group substituted with at least one selected from deuterium, a C1-C60 alkyl group, and a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group.

US Pat. No. 10,693,085

ORGANOMETALLIC COMPLEX, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE

Semiconductor Energy Labo...

1. A light-emitting element comprising, as a light-emitting substance, an organometallic complex having a structure represented by formula (G0),
wherein:
X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom, and
R1 and R2 each represent an alkyl group having 1 to 6 carbon atoms.

US Pat. No. 10,693,084

COMPOUND FOR ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING SAME

SFC CO., LTD., Cheongju-...

1. An anthracene derivative, selected from compounds represented by the following Chemical Formula A-1, A-2, B-1, and B-2:
wherein,
in Chemical Formula A-1 and Chemical Formula B-1,
R1 to R8, and R11 to R13 are each hydrogen atom or deuterium,
R14 to R23, which are same or different, are each independently any one selected from among a hydrogen, a deuterium, a substituted or unsubstituted alkyl of 1 to 30 carbon atoms, a substituted or unsubstituted alkenyl of 2 to 30 carbon atoms, a substituted or unsubstituted alkynyl of 2 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl of 3 to 30 carbon atoms, a substituted or unsubstituted cycloalkenyl of 5 to 30 carbon atoms, a substituted or unsubstituted alkoxy of 1 to 30 carbon atoms, a substituted or unsubstituted aryloxy of 6 to 30 carbon atoms, a substituted or unsubstituted alkylthioxy of 1 to 30 carbon atoms, a substituted or unsubstituted aryl thioxy of 6 to 30 carbon atoms, a substituted or unsubstituted alkyl amine of 1 to 30 carbon atoms, a substituted or unsubstituted aryl amine of 6 to 30 carbon atoms, a substituted or unsubstituted aryl of 6 to 50 carbon atoms, heteroaryl of 2 to 50 carbon atoms bearing 0, N or S as a heteroatom, a cyano, a nitro, a halogen, a substituted or unsubstituted silyl of 1 to 30 carbon atoms, a substituted or unsubstituted germanium of 1 to 30 carbon atoms, a substituted or unsubstituted boron of 1 to 30 carbon atoms, a substituted or unsubstituted aluminum of 1 to 30 carbon atoms, a carbonyl, a phosphoryl, an amino, a thiol, a hydroxy, a selenium, a tellurium, an amide, an ether, and an ester,
wherein, the anthracene derivative has the structure of -(L)m-(B)n for at least one of R15 to R17,
L denotes a linker and is a single bond or a deuterium substituted or unsubstituted arylene of 6 to 60 carbon atoms,
B is a deuterium substituted or unsubstituted aryl of 6 to 60 carbon atoms,
m is an integer of 1 to 2, with a proviso that when m is 2, the corresponding L's may be same or different, and
n is an integer of 1 to 5, with a proviso that when n is 2 or greater, the corresponding B's may be same or different,
in Chemical Formula A-2 and Chemical Formula B-2,
R1 to R8, and R12 to R13 are each hydrogen atom or deuterium,
R11, R14 to R23, which are same or different, are each independently any one selected from among a hydrogen, a deuterium, a substituted or unsubstituted alkyl of 1 to 30 carbon atoms, a substituted or unsubstituted alkenyl of 2 to 30 carbon atoms, a substituted or unsubstituted alkynyl of 2 to 30 carbon atoms, a substituted or unsubstituted cycloalkyl of 3 to 30 carbon atoms, a substituted or unsubstituted cycloalkenyl of 5 to 30 carbon atoms, a substituted or unsubstituted alkoxy of 1 to 30 carbon atoms, a substituted or unsubstituted aryloxy of 6 to 30 carbon atoms, a substituted or unsubstituted alkylthioxy of 1 to 30 carbon atoms, a substituted or unsubstituted aryl thioxy of 6 to 30 carbon atoms, a substituted or unsubstituted alkyl amine of 1 to 30 carbon atoms, a substituted or unsubstituted aryl amine of 6 to 30 carbon atoms, a substituted or unsubstituted aryl of 6 to 50 carbon atoms, heteroaryl of 2 to 50 carbon atoms bearing 0, N or S as a heteroatom, a cyano, a nitro, a halogen, a substituted or unsubstituted silyl of 1 to 30 carbon atoms, a substituted or unsubstituted germanium of 1 to 30 carbon atoms, a substituted or unsubstituted boron of 1 to 30 carbon atoms, a substituted or unsubstituted aluminum of 1 to 30 carbon atoms, a carbonyl, a phosphoryl, an amino, a thiol, a hydroxy, a selenium, a tellurium, an amide, an ether, and an ester,
wherein, the anthracene derivative has the structure of -(L)m-(B)n for at least one of R11 and R15 to R17,
L denotes a linker and is a single bond or a deuterium substituted or unsubstituted arylene of 6 to 60 carbon atoms,
B is a deuterium substituted or unsubstituted aryl of 6 to 60 carbon atoms,
m is an integer of 1 to 2, with a proviso that when m is 2, the corresponding L's may be same or different, and
n is an integer of 1 to 5, with a proviso that when n is 2 or greater, the corresponding B's may be same or different,
in Chemical Formula A-1, Chemical Formula A-2, Chemical Formula B-1, and Chemical Formula B-2,
the substituent Ar1 is a substituted or unsubstituted aryl of 6 to 50 carbon atoms, or a substituted or unsubstituted heteroaryl of 2 to 50 carbon atoms;
two adjacent substituents of R11 to R13 in Chemical Formulas B-1 and B-2 are respective single bonds involved in forming a 5-membered ring as a fused ring with the carbon atom to which the substituents R22 and R23 in Structural Formula Q are both bonded; and
R22 and R23 may be connected to each other to form a ring,
wherein the term ‘substituted’ in the expression “substituted or unsubstituted” means having at least one substituent selected from the group consisting of a deuterium, a cyano, a halogen, a hydroxy, a nitro, an alkyl of 1 to 24 carbon atoms, a halogenated alkyl of 1 to 24 carbon atoms, an alkenyl of 2 to 24 carbon atoms, an alkynyl of 2 to 24 carbon atoms, a heteroalkyl of 1 to 24 carbon atoms, an aryl of 6 to 24 carbon atoms, an arylalkyl of 7 to 24 carbon atoms, a heteroaryl of 2 to 24 carbon atoms or a heteroarylalkyl of 2 to 24 carbon atoms, an alkoxy of 1 to 24 carbon atoms, an alkylamino of 1 to 24 carbon atoms, an arylamino of 6 to 24 carbon atoms, a heteroarylamino of 1 to 24 carbon atoms, an alkylsilyl of 1 to 24 carbon atoms, an arylsilyl of 6 to 24 carbon atoms, and an aryloxy of 6 to 24 carbon atoms.

US Pat. No. 10,693,083

CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. A condensed cyclic compound represented by Formula 1:
wherein, in Formula 1, R1 to R12 are each independently a group represented by Formula 2, hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, or a substituted or unsubstituted C1-C60 alkoxy group, provided that at least one of R1, R5, R7, and R11 is a group represented by Formula 2, and at least two selected from R1, R5, R7, and R11 are not hydrogen,
*-(L1)a1-(Ar1)b1,  
wherein, in Formula 2,
L1 is a substituted or unsubstituted C3-C60 carbocyclic group, a substituted or unsubstituted C1-C60 heterocyclic group, *—Si(Q1)(Q2)-*?, *—N(Q1)-*?, *—B(Q1)-*?, *—C(?O)—*?, *—S(?O)2—*?, or *P(?O)(Q1)-*?,
a1 is an integer of 0 to 4, wherein, when a1 is zero, *-(L1)a1-*? is a single bond, and when a1 is 2, 3, or 4, the 2, 3, or 4 L1(s) are identical to or different from each other,
Ar1 is a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, —Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(?O)(Q1), —S(?O)2(Q1), or —P(?O)(Q1)(Q2),
b1 is an integer of 1 to 4, wherein, when b1 is 2, 3, or 4, the 2, 3, or 4 Ar1(s) are identical to or different from each other,
at least one substituent of the substituted C3-C60 carbocyclic group, the substituted C1-C60 heterocyclic group, the substituted C1-C60 alkyl group, the substituted C2-C60 alkenyl group, the substituted C2-C60 alkynyl group, the substituted C1-C60 alkoxy group, the substituted C3-C10 cycloalkyl group, the substituted C1-C10 heterocycloalkyl group, the substituted C3-C10 cycloalkenyl group, the substituted C1-C10 heterocycloalkenyl group, the substituted C6-C60 aryl group, the substituted C6-C60 aryloxy group, the substituted C6-C60 arylthio group, the substituted C1-C60 heteroaryl group, the substituted monovalent non-aromatic condensed polycyclic group, and the substituted monovalent non-aromatic condensed heteropolycyclic group is selected from:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(?O)(Q11), —S(?O)2(Q11), and —P(?O)(Q11)(Q12);
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group;
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, a terphenyl group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(?O)(Q21), —S(?O)2(Q21), and —P(?O)(Q21)(Q22); and
—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(?O)(Q31), —S(?O)2(Q31), and —P(?O)(Q31)(Q32),
Q1 to Q3, Q11 to Q13, Q21 to Q23, and Q31 to Q33 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryl group substituted with a C1-C60 alkyl group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group, and
* and *? each indicate a binding site to a neighboring atom.

US Pat. No. 10,693,082

ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES

Universal Display Corpora...

9. A formulation comprising a compound of claim 1.

US Pat. No. 10,693,081

HETEROCYCLIC COMPOUND AND ORGANIC SOLAR CELL COMPRISING SAME

LG Chem, Ltd., Seoul (KR...

1. A heterocyclic compound of any one of Compounds 1-3 to 1-9 or 1-13:
wherein, in Compounds 1-4 to 1-9:
R201 to R214 are the same as or different from each other, and are each independently hydrogen, deuterium, a halogen group, a nitrile group, a nitro group, an imide group, an amide group, a hydroxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkylthioxy group, a substituted or unsubstituted arylthioxy group, a substituted or unsubstituted alkylsulfoxy group, a substituted or unsubstituted arylsulfoxy group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted silyl group, a substituted or unsubstituted boron group, a substituted or unsubstituted alkylamine group, a substituted or unsubstituted aralkylamine group, a substituted or unsubstituted arylamine group, a substituted or unsubstituted heteroarylamine group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heterocyclic group comprising one or more of N, O, and S atoms.

US Pat. No. 10,693,080

SOLVENT FOR PRODUCING ORGANIC TRANSISTOR

DAICEL CORPORATION, Osak...

1. A composition for organic transistor production, the composition comprising:an organic semiconductor material comprising a compound including a constitutional unit represented by Formula (1-1b):

and a solvent,
the solvent being used for dissolving the organic semiconductor material, the solvent comprising a solvent A,
wherein the solvent A comprises at least one selected from the group consisting of 2-methylcyclopentanone, 2-methylcyclohexanone, cyclohexyl methyl ether, cyclohexylamine, 2,3-dihydrobenzofuran, and 2,3-dihydro-3-methylbenzofuran.

US Pat. No. 10,693,079

MONO AMINE DERIVATIVES AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME

Samsung Display Co., Ltd....

1. An organic electroluminescent (EL) device, comprising:a first electrode;
a second electrode on the first electrode; and
at least one organic layer between the first electrode and the second electrode,
wherein the at least one organic layer comprises a monoamine derivative having only one amine group, represented by Formula 1:

wherein in Formula 1,
Ar1 is represented by Formula 2,
Ar2 is an unsubstituted phenyl group, biphenyl group, terphenyl group, naphthyl group, anthryl group, phenanthrenyl group, fluorenyl group, indenyl group, pyrenyl group, fluoranthenyl group, or triphenylenyl group; or a 9,9-disubstituted fluorenyl group,
Ar1 and Ar2 are different from each other,
m is an integer from 0 to 4,
R1 is a substituted or unsubstituted aryl group having 6 to 30 carbon atoms for forming a ring, and when m is 2 or more, a plurality of R1 may combine to form a ring,

wherein in Formula 2,
n is 0, and X is represented by one of the following groups:

wherein the at least one organic layer comprising the monoamine derivative is a hole transfer layer.

US Pat. No. 10,693,078

ORGANIC ELECTROLUMINESCENT DEVICE

Hodogaya Chemical Co., Lt...

1. An organic electroluminescent device comprising at least an anode, a hole transport layer, a light emitting layer, an electron transport layer and a cathode in this order, wherein the hole transport layer comprises an arylamine compound of the following general formula (1), and the light emitting layer comprises an amine derivative of the following general formula (2a-a), (2a-b), (2b-a), (2b-b), (2b-c), (2b-d), (2c-a) or (2c-b) having a condensed ring structure:wherein Ar1 to Ar4 may be the same or different, and represent a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted condensed polycyclic aromatic group,wherein the substituents of the substituted aromatic hydrocarbon groups, substituted aromatic heterocyclic groups, or substituted condensed polycyclic aromatic groups are one or more of a deuterium atom, cyano, nitro, a halogen atom, linear or branched alkyl of 1 to 6 carbon atoms, linear or branched alkyloxy of 1 to 6 carbon atoms, alkenyl, aryloxy, arylalkyloxy, an aromatic hydrocarbon group, a condensed polycyclic aromatic group, an aromatic heterocyclic group, arylvinyl, acyl, or silyl;and n represents an integer of 2 to 4,wherein X and Y may be the same or different, each representing an oxygen atom or a sulfur atom; A1 represents a divalent group of a substituted or unsubstituted aromatic hydrocarbon, a divalent group of a substituted or unsubstituted aromatic heterocyclic ring, a divalent group of substituted or unsubstituted condensed polycyclic aromatics, or a single bond; Ar5 and Ar6 may be the same or different, and represent a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, or a substituted or unsubstituted condensed polycyclic aromatic group, where Ar5 and Ar6 may bind to each other via a single bond, substituted or unsubstituted methylene, an oxygen atom, or a sulfur atom to form a ring; R1 to R4 may be the same or different, and represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, cyano, nitro, linear or branched alkyl of 1 to 6 carbon atoms that may have a substituent, cycloalkyl of 5 to 10 carbon atoms that may have a substituent, linear or branched alkenyl of 2 to 6 carbon atoms that may have a substituent, linear or branched alkyloxy of 1 to 6 carbon atoms that may have a substituent, cycloalkyloxy of 5 to 10 carbon atoms that may have a substituent, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted condensed polycyclic aromatic group, substituted or unsubstituted aryloxy, or a disubstituted amino group substituted with a group selected from an aromatic hydrocarbon group, an aromatic heterocyclic group, and a condensed polycyclic aromatic group, where R1 to R4 may bind to each other via a single bond, substituted or unsubstituted methylene, an oxygen atom, or a sulfur atom to form a ring, and R1 to R4 and the benzene ring binding with R1 to R4 may bind to each other via substituted or unsubstituted methylene, an oxygen atom, a sulfur atom, or a mono-substituted amino group; R5 to R7 may be the same or different, represent a hydrogen atom, a deuterium atom, a fluorine atom, a chlorine atom, cyano, nitro, linear or branched alkyl of 1 to 6 carbon atoms that may have a substituent, cycloalkyl of 5 to 10 carbon atoms that may have a substituent, linear or branched alkenyl of 2 to 6 carbon atoms that may have a substituent, linear or branched alkyloxy of 1 to 6 carbon atoms that may have a substituent, cycloalkyloxy of 5 to 10 carbon atoms that may have a substituent, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted condensed polycyclic aromatic group, or substituted or unsubstituted aryloxy, where R5 to R7 may bind to each other via a single bond, substituted or unsubstituted methylene, an oxygen atom, or a sulfur atom to form a ring, and R5 to R7 and the benzene ring binding with R5 to R7 may bind to each other via substituted or unsubstituted methylene, an oxygen atom, a sulfur atom, or a mono-substituted amino group; and R8 and R9 may be the same or different, linear or branched alkyl of 1 to 6 carbon atoms that may have a substituent, cycloalkyl of 5 to 10 carbon atoms that may have a substituent, linear or branched alkenyl of 2 to 6 carbon atoms that may have a substituent, a substituted or unsubstituted aromatic hydrocarbon group, a substituted or unsubstituted aromatic heterocyclic group, a substituted or unsubstituted condensed polycyclic aromatic group, or substituted or unsubstituted aryloxy, where R8 and R9 may bind to each other via a single bond, substituted or unsubstituted methylene, an oxygen atom, a sulfur atom, or a mono-substituted amino group to form a ring.

US Pat. No. 10,693,077

COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME

SHANGHAI NICHEM FINE CHEM...

1. A compound represented by any one of the following Formulae (I-I) to (I-XXXIII):
wherein in Formulae (I-I) to (I-XXXIII), X1 and X2 are each independently C(Ra), multiple (Ra)s are the same or different, and the two (Ra)s are joined together to form a first aryl ring;
wherein in Formulae (I-I) to (I-XXXIII), A1 and A2 are each independently C(Rc), multiple (Rc)s are the same or different, and the two (Rc)s are joined together to form an aromatic structure;
wherein in Formulae (I-I) to (I-XXXIII), Z1 to Z12 are each independently selected from the group consisting of: a hydrogen atom, a deuterium atom, a trifluoromethyl group, a halogen group, a cyano group, a nitro group, an alkyl group having 1 to 40 carbon atoms, an alkenyl group having 2 to 40 carbon atoms, an alkynyl group having 2 to 40 carbon atoms, a cycloalkyl group having 3 to 60 ring carbon atoms, a heterocycloalkyl group having 3 to 60 ring carbon atoms, an aryl group having 6 to 60 ring carbon atoms, a heteroaryl group having 3 to 60 ring carbon atoms, an alkoxy group having 1 to 40 carbon atoms, an aryloxy group having 6 to 60 ring carbon atoms, an alkylsilyl group having 1 to 40 carbon atoms, an arylsilyl group having 6 to 60 ring carbon atoms, an alkylboron group having 1 to 40 carbon atoms, an arylboron group having 6 to 60 ring carbon atoms, a phosphine group having 1 to 40 carbon atoms, and a phosphine oxide group having 1 to 40 carbon atoms;
wherein in Formulae (I-I) to (I-XXXIII), each of Z13 is selected from the group consisting of: a hydrogen atom, a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, and a phenyl group.

US Pat. No. 10,693,076

CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME

Samsung Display Co., Ltd....

1. A condensed-cyclic compound represented by Formula 1:
wherein, in Formulae 1, 2A, and 2B,
ring A1 is selected from a benzene group, a naphthalene group, a pyridine group, a pyrimidine group, a pyrazine group, a quinoline group, an isoquinoline group, a quinoxaline group, a quinazoline group, and a cinnoline group,
ring A2 is selected from a pyridine group, a pyrimidine group, a pyrazine group, a quinoline group, an isoquinoline group, a quinoxaline group, a quinazoline group, and a cinnoline group,
ring A3 is selected from groups represented by Formula 2A and groups represented by Formula 2B,
X1 is selected from N-[(L11)a11-(R11)b11], O, and S,
X2 is selected from N-[(L12)a12-(R12)b12], O, and S,
L1 and L2 are each independently selected from substituted or unsubstituted condensed polycyclic groups, in which 3 or more carbocyclic groups are condensed with each other,
a1 and a2 are each independently an integer from 1 to 5; when a1 is 2 or greater, at least two L1 (s) are identical to or different from each other; when a2 is 2 or greater, at least two L2 (s) are identical to or different from each other,
L11 is selected from a substituted or unsubstituted C3-C10 cycloalkylene group, a substituted or unsubstituted C3-C10 cycloalkenylene group, a substituted or unsubstituted C6-C60 arylene group, and a substituted or unsubstituted divalent non-aromatic condensed polycyclic group,
a11 is an integer from 0 to 5,
L12 is selected from a substituted or unsubstituted C3-C10 cycloalkylene group, a substituted or unsubstituted C1-C10 heterocycloalkylene group, a substituted or unsubstituted C3-C10 cycloalkenylene group, a substituted or unsubstituted C1-C10 heterocycloalkenylene group, a substituted or unsubstituted C6-C60 arylene group, a substituted or unsubstituted C1-C60 heteroarylene group, a substituted or unsubstituted divalent non-aromatic condensed polycyclic group, and a substituted or unsubstituted divalent non-aromatic condensed heteropolycyclic group,
a12 is an integer from 0 to 5,
R11 is selected from a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, and a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group,
b11 is an integer from 1 to 4,
R1 to R4, R6, R12, and R13 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a substituted or unsubstituted C1-C60 alkyl group, a substituted or unsubstituted C2-C60 alkenyl group, a substituted or unsubstituted C2-C60 alkynyl group, a substituted or unsubstituted C1-C60 alkoxy group, a substituted or unsubstituted C3-C10 cycloalkyl group, a substituted or unsubstituted C1-C10 heterocycloalkyl group, a substituted or unsubstituted C3-C10 cycloalkenyl group, a substituted or unsubstituted C1-C10 heterocycloalkenyl group, a substituted or unsubstituted C6-C60 aryl group, a substituted or unsubstituted C6-C60 aryloxy group, a substituted or unsubstituted C6-C60 arylthio group, a substituted or unsubstituted C1-C60 heteroaryl group, a substituted or unsubstituted monovalent non-aromatic condensed polycyclic group, a substituted or unsubstituted monovalent non-aromatic condensed heteropolycyclic group, Si(Q1)(Q2)(Q3), —N(Q1)(Q2), —B(Q1)(Q2), —C(?O)(Q1), —S(?O)2(Q1), and —P(?O)(Q1)(Q2),
R5 is each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C20 alkyl group, a C1-C20 alkoxy group, a phenyl group, a biphenyl group, a terphenyl group, and a naphthyl group,
b1, b2, b5, b6, and b12 are each independently an integer from 0 to 4,
b3 and b4 are each independently an integer from 0 to 6,
b13 is selected from 0, 1, and 2,
c1 is an integer from 1 to 4 and c2 is 0,
at least one substituent of the substituted condensed polycyclic group, substituted C3-C10 cycloalkylene group, substituted C1-C10 heterocycloalkylene group, substituted C3-C10 cycloalkenylene group, substituted C1-C10 heterocycloalkenylene group, substituted C6-C60 arylene group, substituted C1-C60 heteroarylene group, substituted divalent non-aromatic condensed polycyclic group, substituted divalent non-aromatic condensed heteropolycyclic group, substituted C1-C60 alkyl group, substituted C2-C60 alkenyl group, substituted C2-C60 alkynyl group, substituted C1-C60 alkoxy group, substituted C3-C10 cycloalkyl group, substituted C1-C10 heterocycloalkyl group, substituted C3-C10 cycloalkenyl group, substituted C1-C10 heterocycloalkenyl group, substituted C6-C60 aryl group, substituted C6-C60 aryloxy group, substituted C6-C60 arylthio group, substituted C1-C60 heteroaryl group, substituted monovalent non-aromatic condensed polycyclic group, and substituted monovalent non-aromatic condensed heteropolycyclic group is selected from:
deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group;
a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, and a C1-C60 alkoxy group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q11)(Q12)(Q13), —N(Q11)(Q12), —B(Q11)(Q12), —C(?O)(Q11), —S(?O)2(Q11), and —P(?O)(Q11)(Q12);
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, a biphenyl group, and a terphenyl group;
a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group, each substituted with at least one selected from deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryloxy group, a C6-C60 arylthio group, a C1-C60 heteroaryl group, a monovalent non-aromatic condensed polycyclic group, a monovalent non-aromatic condensed heteropolycyclic group, —Si(Q21)(Q22)(Q23), —N(Q21)(Q22), —B(Q21)(Q22), —C(?O)(Q21), —S(?O)2(Q21), and —P(?O)(Q21)(Q22); and
—Si(Q31)(Q32)(Q33), —N(Q31)(Q32), —B(Q31)(Q32), —C(?O)(Q31), —S(?O)2(Q31), and —P(?O)(Q31)(Q32),
wherein Q1 to Q3, Q11 to Q13, Q21 to Q23, and Q31 to Q33 are each independently selected from hydrogen, deuterium, —F, —Cl, —Br, —I, a hydroxyl group, a cyano group, a nitro group, an amidino group, a hydrazino group, a hydrazono group, a C1-C60 alkyl group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C1-C60 alkoxy group, a C3-C10 cycloalkyl group, a C1-C10 heterocycloalkyl group, a C3-C10 cycloalkenyl group, a C1-C10 heterocycloalkenyl group, a C6-C60 aryl group, a C6-C60 aryl group substituted with a C1-C60 alkyl group, a C6-C60 aryl group substituted with a C6-C60 aryl group, a terphenyl group, a C1-C60 heteroaryl group, a C1-C60 heteroaryl group substituted with a C1-C60 alkyl group, a C1-C60 heteroaryl group substituted with a C6-C60 aryl group, a monovalent non-aromatic condensed polycyclic group, and a monovalent non-aromatic condensed heteropolycyclic group.

US Pat. No. 10,693,075

SPIRO COMPOUND AND ORGANIC ELECTRONIC DEVICE COMPRISING THE SAME

SHANGHAI NICHEM FINE CHEM...

1. A compound represented by the following Formula (I):
wherein X1 and X2 are each independently C(Ra), the two (Ra)s are the same or different, and the two (Ra)s are joined together to form an aryl ring;
wherein X3 and X4 are each independently C(Rb), the two (Rb)s are the same or different, and the two (Rb)s are joined together to form a polycyclic aromatic ring;
wherein Z1 to Z10 are each independently selected from the group consisting of: a hydrogen atom, a deuterium atom, a trifluoromethyl group, a halogen group, a cyano group, a nitro group, an alkyl group having 1 to 40 carbon atoms, an alkenyl group having 2 to 40 carbon atoms, an alkynyl group having 2 to 40 carbon atoms, a cycloalkyl group having 3 to 60 ring carbon atoms, a heterocycloalkyl group having 3 to 60 ring carbon atoms, an aryl group having 6 to 60 ring carbon atoms, a heteroaryl group having 3 to 60 ring carbon atoms, an alkoxy group having 1 to 40 carbon atoms, an aryloxy group having 6 to 60 ring carbon atoms, an alkylsilyl group having 1 to 40 carbon atoms, an arylsilyl group having 6 to 60 carbon atoms, an alkylboron group having 1 to 40 carbon atoms, an arylboron group having 6 to 60 ring carbon atoms, a phosphine group having 1 to 40 carbon atoms, and a phosphine oxide group having 1 to 40 carbon atoms.

US Pat. No. 10,693,074

5,12-DIHYDROTETRACENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME

1. A 5,12-dihydrotetracene derivative of formula (1) or formula (2) below:
wherein L represents a single bond, a substituted or unsubstituted divalent arylene group having 6 to 30 ring carbon atoms, or a substituted or unsubstituted divalent heteroarylene group having 6 to 30 ring carbon atoms; D is an electron donor moiety selected from the group consisting of a substituted or unsubstituted carbazolyl group, a substituted or unsubstituted biscarbazolyl group, a substituted or unsubstituted dihydroacridine group, a substituted or unsubstituted phenoxazine group, and a substituted or unsubstituted diarylamine group; and A is an electron acceptor moiety selected from the following formulas:

wherein p represents an integer of 0 to 4; q represents an integer of 0 to 5; r represents an integer of 1 to 4; Y1 to Y4 are each independently a divalent bridge selected from the group consisting of O, S, C(R22)(R23), NR24, and Si(R25)(R26); X1 to X7 independently represent a nitrogen atom or C(Rs), and each Rs represents a hydrogen atom, a halide, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms; Z represents a cyano group or a fluorine atom; and R10 to R26 are independently selected from the group consisting of a hydrogen atom, a halide, a substituted or unsubstituted alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 6 to 30 carbon atoms, and a substituted or unsubstituted heteroaryl group having 3 to 30 carbon atoms.

US Pat. No. 10,693,073

FULLERENE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE COMPRISING FULLERENE DERIVATIVES

LG CHEM, LTD., Seoul (KR...

1. A fullerene derivative of Chemical Formula 1:
wherein:
n is an integer of 1 to 5;
when n is 2 or greater, structures within a parenthesis are the same as or different from each other;
Cn is fullerene of C60 to C120;
R1 to R6 are the same as or different from each other, and each is independently hydrogen, a halogen group, a nitro group, a cyano group, a carboxylic acid group, a hydroxyl group, a substituted or unsubstituted carbonyl group, a sulfo group (—SO3H), a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ester group, a substituted or unsubstituted thioester group, a substituted or unsubstituted amide group, a substituted or unsubstituted ether group, a substituted or unsubstituted sulfonyl group (—SO2—), a substituted or unsubstituted alkylthioxy group, a substituted or unsubstituted arylthioxy group, a substituted or unsubstituted alkylamine group, a substituted or unsubstituted arylamine group, a substituted or unsubstituted arylalkyl group, a substituted or unsubstituted heteroarylalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroring group, or adjacent substituents bond to each other to form a substituted or unsubstituted hydrocarbon ring or a substituted or unsubstituted heteroring;
only one of R1 to R6 is

o is an integer of 1 to 3, and when o is an integer of 2 or greater, two or more Ls are the same as or different from each other;
L is an unsubstituted alkylene; and
R is hydrogen, a carboxylic acid group, a substituted or unsubstituted carbonyl group, an unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ester group, a substituted or unsubstituted thioester group, a substituted or unsubstituted amide group, a substituted or unsubstituted sulfonyl group (—SO2—), a substituted or unsubstituted arylalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroring group,
when R is a substituted carbonyl group substituted with a substituted alkyl group, the substituted alkyl group of the substituted carbonyl group is substituted with one or more substituents selected from the group consisting of a halogen group, a nitro group, a cyano group, a hydroxyl group, a carbonyl group, a sulfo group, an allyl group, an alkoxy group, a cycloalkyl group, an alkenyl group, an ester group, an ether group, a sulfonyl group, a sulfoxy group, an arylalkyl group, an aryl group, and a heteroring group,
wherein when one of R5 and R6 is unsubstituted alkyl and the other one of R5 and R6 is hydrogen, R3 and R4 are each hydrogen, one of R1 and R2 is hydrogen and the other one of R1 and R2 is
L is an unsubstituted alkylene, and o is 1, R is a carboxylic acid group, a substituted or unsubstituted carbonyl group, an unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ester group, a substituted or unsubstituted thioester group, a substituted or unsubstituted amide group, a substituted or unsubstituted sulfonyl group (—SO2—), a substituted or unsubstituted arylalkyl group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted heteroring group.

US Pat. No. 10,693,072

DIAZIRINE CONTAINING ORGANIC ELECTRONIC COMPOSITIONS AND DEVICE THEREOF

PROMERUS, LLC, Brecksvil...

18. A composition comprising:a) a polymer having one or more distinct repeat units of formula (IA), where the repeat units are derived from a monomer of formula (I):

c) a random copolymer having repeat units of formula (IA) and another olefin, said random copolymer having the formula (II), where the repeat unit of formula (IA) is derived from a monomer of formula (I):

wherein
m is an integer 0, 1 or 2;
each occurrence of R1, R2, R3 or R4 may be same or different and each independently is hydrogen or a hydrocarbyl selected from the group consisting of linear or branched (C1-C12)alkyl, (C3-C12)cycloalkyl, (C3-C12)cycloalkyl(C1-C12)alkyl, (C6-C12)bicycloalkyl, (C6-C12)bicycloalkyl(C1-C12)alkyl, (C7-C14)tricycloalkyl, (C7-C14)tricycloalkyl(C1-C12)alkyl, (C6-C10)aryl and (C6-C10)aryl(C1-C6)alkyl; and
a compound of formula (V):

wherein,
L is a divalent linking or a spacer group selected from:
—C(O)O—R7—OC(O)—, —C(O)O—R7—, —R7—OC(O)—R7—, —C(O)—R7—OC(O)—, —C(O)—R7—, —R7—C(O)—R7—, —O—R7—OC(O)—, —O—R7—O—, —O—R7—, —R7—O—R7—, —C(O)NH—(CH2)b—NH(CO)—, where b is 1 to 15, —C(O)NH—(CH2CH2O)c(CH2)d—NR5(CO)—, where c is 2 to 6 and d is 1 to 6, and each occurrence of R7 may be the same or different which is a divalent group independently selected from (C1-C12)alkyl, (C3-C12)cycloalkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C12)alkyl, (C6-C10)heteroaryl, (C6-C10)heteroaryl(C1-C12)alkyl, —(CH2—CH2—O)a—, where a is an integer from 1 to 10;
R5 and R6 are the same or different and each is independently selected from the group consisting of (C1-C12)alkyl, where portions of hydrogen on alkyl are replaced with fluorine, (C1-C12)perfluoroalkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C12)alkyl, where portions of hydrogen on alkyl are replaced with fluorine, and (C6-C12)arylperfluoro(C1-C12)alkyl; and
Ar1 and Ar2 same or different and each is independently selected from (C6-C12)arylene or (C6-C12)heteroarylene group optionally substituted with a group selected from halogen, —OH(C1-C4)alkyl, (C1-C4)alkoxy, (C6-C10)aryl, (C6-C12)aryloxy, (C6-C12)aryl(C1-C4)alkyl and (C6-C12)aryl(C1-C4)alkyloxy.

US Pat. No. 10,693,071

EFFICIENT AND STABLE PEROVSKITE SOLAR CELLS WITH ALL SOLUTION PROCESSED METAL OXIDE TRANSPORTING LAYERS

The Regents of the Univer...

1. An opto-electronic device, comprising:a first electrode;
a first buffer layer formed on said first electrode;
a perovskite semiconductor active layer formed on said first buffer layer;
a second buffer layer formed on said perovskite semiconductor active layer; and
a second electrode formed on said second buffer layer,
wherein said first buffer layer has a thickness between about 75 nm and about 85 nm,
wherein said second buffer layer has a thickness between about 65 nm and about 75 nm, and
wherein said first buffer layer is nickel oxide and said second buffer layer is zinc oxide.

US Pat. No. 10,693,070

MANUFACTURING METHOD FOR ELECTROLUMINESCENCE DEVICE

SHARP KABUSHIKI KAISHA, ...

1. A method for manufacturing an electroluminescence (EL) device comprising:a process of peeling a mother substrate and a layered body including a light-emitting element layer from each other by irradiation with a laser, wherein
the mother substrate and the layered body are in contact with each other with a resin layer of the layered body interposed between the mother substrate and the layered body, and
in a case that the process of peeling is performed by irradiating the resin layer with the laser, an irradiation of the laser is performed on at least a portion of an end portion of the resin layer under a condition different from a condition in a central portion of the resin layer,
the process of peeling the mother substrate and the layered body is performed by inserting a knife into the end portion after the irradiation by the laser,
after an insertion of the knife, the knife is slid along the end portion subjected to the insertion of the knife, and
the layered body includes the resin layer and an inorganic film, and the process of peeling the mother substrate and the layered body from each other is started by inserting the knife between the mother substrate and the inorganic film.

US Pat. No. 10,693,069

METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR TRANSISTOR

1. A method for manufacturing an organic semiconductor transistor, comprising:forming a gate insulating layer on a gate electrode;
forming a source electrode and a drain electrode which are spaced apart from each other on the gate insulating layer;
forming a channel layer using an organic semiconductor on the gate insulating layer on which the source electrode and the drain electrode are formed; and
thermally depositing dopant molecules on the channel layer,
wherein, in the thermal deposition of the dopant molecules, the dopant molecules are thermally deposited to be spaced above a position at which each of the source electrode and the drain electrode is in contact with the channel layer, and
the dopant molecules and the organic semiconductor form a material combination in which the dopant molecules diffuse in the organic semiconductor in a solid-state diffusion manner.

US Pat. No. 10,693,068

ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

Samsung Display Co., Ltd....

7. A method of manufacturing an organic light-emitting display apparatus, the method comprising:forming lower electrodes on a substrate, the lower electrodes being spaced apart from one another;
forming a pixel-defining film, the pixel-defining film having portions that cover ends of the lower electrodes;
forming a first lift-off layer on the lower electrodes and the pixel-defining film;
forming a first region corresponding to a first one of the lower electrodes, the first region being formed by removing a first portion of the first lift-off layer;
sequentially forming, in the first region, a first upper electrode and a first organic functional layer that includes a first emission layer;
removing a second portion of the first lift-off layer using a first solvent;
forming a second lift-off layer on the substrate, the second lift-off layer covering the first organic functional layer and the lower electrodes;
forming a second region corresponding to a second one of the lower electrodes, the second region being formed by removing a first portion of the second lift-off layer;
sequentially forming, in the second region, a second upper electrode and a second organic functional layer that includes a second emission layer;
removing a second portion of the second lift-off layer using a second solvent;
forming a first auxiliary electrode on the first organic functional layer and forming a second auxiliary electrode on the second organic functional layer, the first and second auxiliary electrodes being spaced apart from each other; and
forming a second electrode on the first organic functional layer and the second organic functional layer, the second electrode being integrated across the first and second organic functional layers,
wherein each of the first and second upper electrodes includes a first portion contacting a corresponding lower electrode and a second portion contacting the pixel-defining film,
wherein each of the first and second auxiliary electrodes is between the second electrode and a corresponding organic functional layer, each of the first and second auxiliary electrodes being between two adjacent portions of the pixel-defining film to expose tops of the two adjacent portions, and
wherein the first and second auxiliary electrodes do not contact the pixel-defining film.

US Pat. No. 10,693,067

TOUCH SENSOR AND FABRICATING METHOD THEREOF AND TOUCH DISPLAY PANEL

SHANGHAI TIANMA MICRO-ELE...

1. A touch sensor, comprising:a substrate having a first area and a second area, wherein the first area has a plurality of grooves and the second area has no grooves;
a first infiltrating adjustment layer disposed on inside walls of the plurality of grooves in the first area; and
a plurality of touch electrodes disposed directly on the first infiltrating adjustment layer inside the plurality of grooves;
wherein the touch electrodes are not in contact with the substrate;
wherein the plurality of touch electrodes is formed by dissolving a touch electrode material by a solvent from a solid state into a solution state, so the touch electrode in the solution state is in contact with the first infiltrating adjustment layer in the plurality of grooves and is also in contact with the substrate in the second area; and
wherein during forming of the plurality of touch electrodes, an infiltration angle of the touch electrode in the solution state is an included angle between a tangent line T1 of a gas-liquid interface at an intersection point O of gas phase, liquid phase and solid phase, and a solid-liquid border line T2 passing through the touch electrode in the solution state, wherein the infiltration angle between each touch electrode in the solution state and the first infiltrating adjustment layer is ?, the infiltration angle between each touch electrode in the solution state and the substrate is ?, wherein ? is not equal to ?, and ? and ? are constant when the touch electrodes are in the solution state.

US Pat. No. 10,693,066

METHODS, APPARATUSES, AND CIRCUITS FOR PROGRAMMING A MEMORY DEVICE

Micron Technology, Inc., ...

1. An apparatus, comprising:a memory material comprising a programmable portion and extending in a sideways direction;
a separation material positioned over the memory material and extending in the sideways direction;
a conductive material positioned over the separation material and extending in the sideways direction; and
a conductive path from the conductive material to the memory material through the separation material, wherein a portion of the conductive path extends through the separation material in the sideways direction.

US Pat. No. 10,693,065

TAPERED CELL PROFILE AND FABRICATION

Micron Technology, Inc., ...

1. A memory device, comprising:a storage component comprising a mixture of a first chalcogenide material and a second chalcogenide material different from the first chalcogenide material, the storage component having a first surface and a second surface opposite the first surface, the second surface having a greater area than the first surface;
a first electrode coupled with the first surface of the storage component;
a first conductive material coupled with the first electrode;
a second electrode coupled with the second surface of the storage component and in electronic communication with the first electrode via the storage component; and
a third electrode coupled with the second electrode.

US Pat. No. 10,693,064

SEMICONDUCTOR MEMORY DEVICE

Toshiba Memory Corporatio...

1. A memory cell array block, comprising:a substrate;
a plurality of column line layers arranged in a first direction perpendicular to a surface of the substrate, each column line layer including a plurality of column lines extending in a second direction crossing the first direction;
a plurality of rows of row lines interleaved with the column lines of the plurality of column line layers, such that a row of row lines is positioned between each consecutive pair of column lines in each column line layers, the row line extending in the first direction;
a plurality of memory cells; and
a row line connecting line layer being provided between the substrate and the plurality of rows of row lines, the row line connecting line layer having a plurality of row line connecting lines each extending in a third direction crossing the first direction and the second direction, wherein the row line connecting layer connected to at least one row line of the plurality of rows of the row line,
each row line is positioned between a consecutive pair of memory cells on each column line layers,
each memory cell is disposed between a row line and an adjacent column line, and
non-adjacent row lines arranged alternately in the third direction are electrically coupled to the row line connecting line in the row line connecting line layer.

US Pat. No. 10,693,063

METHODS OF FORMING A MEMORY STRUCTURE

Micron Technology, Inc., ...

1. A method of forming a memory structure, comprising:forming a first dielectric liner material over memory cells;
forming a high-k dielectric material over the first dielectric liner material, the high-k dielectric material exhibiting a thickness less than or equal to about 25 ?;
forming a second dielectric liner material over the high-k dielectric material; and
forming an additional dielectric material over the second dielectric liner material.

US Pat. No. 10,693,062

REGULATING INTERFACE LAYER FORMATION FOR TWO-TERMINAL MEMORY

Crossbar, Inc., Santa Cl...

1. A method for forming a semiconductor device including a reversibly switchable bipolar resistive switching memory cell, comprising:providing a complementary metal oxide semiconductor (CMOS) substrate having a first terminal of the reversibly switchable bipolar resistive switching memory cell formed thereon;
forming a conductive material layer upon the first terminal;
forming in a processing chamber including silane plasma and ammonia (NH3) plasma, a resistive switching material layer comprising a non-stoichiometric silicon sub-nitride upon the conductive material layer;
forming a blocking layer overlying the resistive switching material layer;
forming an active metal layer comprising an active metal material overlying the blocking layer, and
providing a high temperature bake of equal to or greater than 400 degrees Celsius to the semiconductor device and inducing diffusion of metal particles from the active metal material into the blocking layer and only in part into the resistive switching material layer near a boundary of the blocking layer and the resistive switching material layer and wherein a majority of the metal particles remain wholly within the blocking layer in response to the high temperature bake, wherein:
the active metal material is selected from a group consisting of: AlN, Ti, TiN and a non-stoichiometric Cu sub-oxide having a chemical formula: CuOx where 0 the blocking layer has a first diffusivity to metal ions of the active metal material and the resistive switching material layer has a second diffusivity to the metal ions of the active metal material, wherein the first diffusivity is lower than the second diffusivity.

US Pat. No. 10,693,061

SEMICONDUCTOR DEVICES HAVING PHASE-CHANGE MATERIAL (PCM) RADIO FREQUENCY (RF) SWITCHES AND INTEGRATED ACTIVE DEVICES

Newport Fab, LLC, Newpor...

1. An IC chip including a substrate, said IC chip further comprising:a phase-change material (PCM) radio frequency (RF) switch integrated in said IC chip, said PCM RF switch comprising:
a heating element;
a PCM situated over said heating element;
PCM contacts situated over passive segments of said PCM;
said heating element extending transverse to said PCM and underlying an active segment of said PCM;
an active device in said substrate;
said PCM RF switch being situated below a first metallization level and on said substrate, wherein said substrate is a heat spreader for said PCM RF switch.

US Pat. No. 10,693,060

PHASE CHANGE MEMORY STRUCTURE AND THE SAME

TAIWAN SEMICONDUCTOR MANU...

1. A phase change memory structure, comprising:a bottom electrode;
a first phase change material contacting a top surface of the bottom electrode;
a first switch over the first phase change material, wherein the first switch has a first threshold voltage;
a second phase change material over the first switch;
a top electrode over the second phase change material; and
a second switch between the second phase change material and the top electrode, wherein the second switch has a second threshold voltage, the first threshold voltage is greater than the second threshold voltage.

US Pat. No. 10,693,059

MTJ STACK ETCH USING IBE TO ACHIEVE VERTICAL PROFILE

International Business Ma...

1. A method for MTJ patterning for a MTJ device, comprising:(a) providing an MTJ device comprising a substrate comprising a plurality of bottom electrodes, a MTJ layer disposed on the substrate, and a plurality of pillars disposed on the MTJ layer and over the plurality of bottom electrodes, wherein the plurality of pillars comprise a metal layer and a hard mask layer disposed on the metal layer,
(b) conducting a first ion beam etching of the MTJ device to remove a portion of a horizontal surface of the MTJ layer;
(c) stopping the first ion beam etching and rotating the MTJ device by 90 degrees in a clockwise or a counter clockwise direction about an axis perpendicular to a top surface of the MTJ device from a starting position;
(d) stopping rotating the MTJ device and conducting a second ion beam etching of the MTJ device to further remove the portion of the horizontal surface of the MTJ layer; and
(e) repeating steps (c) and (d) until the horizontal surface of the MTJ layer is substantially removed.

US Pat. No. 10,693,058

MAGNETIC TUNNEL JUNCTION DEVICE AND MAGNETIC MEMORY DEVICE

Korea University Research...

1. A magnetic tunnel junction device including a magnetic tunnel junction including a fixed magnetic body, an insulator, and a free magnetic body that are sequentially stacked and a conducting wire disposed adjacent to the free magnetic body of the magnetic tunnel junction to apply in-plane current to the magnetic tunnel junction,wherein the fixed magnetic body has a fixed magnetization direction and is a thin film including a material magnetized in a direction perpendicular to a film surface,
the free magnetic body has a structure of [auxiliary free magnetic layer/free non-magnetic layer]N/main free magnetic layer,
N is a positive integer greater than or equal to 2 and indicates that an [auxiliary free magnetic layer/free non-magnetic layer] structure is stacked repeatedly N times,
two adjacent magnetic layers in the free magnetic body have opposite magnetization directions by Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction conducted through the free non-magnetic layer,
each of the main free magnetic layer and the auxiliary free magnetic layer is configured to change in magnetization direction and is a thin film including a material magnetized in a direction perpendicular to a film surface, and
the main free magnetic layer is disposed adjacent to the conducting wire generating spin current by the in-plane current,
a spin-orbit spin torque is generated by spin Hall effect or Rashba effect by applying in-plane current to a conducting wire, and
a thickness of other magnetic layers in the free magnetic body, except for the auxiliary free magnetic layer adjacent to the insulator, is smaller than a ferromagnetic coherence length ?c, to manifest a bulk-torque characteristic.

US Pat. No. 10,693,057

SENSOR COMPONENT WITH CAP OVER TRENCH AND SENSOR ELEMENTS

TDK-MICRONAS GMBH, Freib...

1. A component comprising:at least one substrate;
at least one magnetic field sensor;
at least one trench in the at least one substrate surrounding the at least one magnetic field sensor at least partially;
at least one cap covering the at least one trench and the at least one magnetic field sensor; and
two layer elements arranged between the at least one cap and the at least one substrate;
wherein the two layer elements and the at least one trench are arranged to form a cavity therebetween;
and wherein the two layer elements are selected from a group comprising a polyimide layer and a die attach film.

US Pat. No. 10,693,056

THREE-DIMENSIONAL (3D) MAGNETIC MEMORY DEVICE COMPRISING A MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A METALLIC BUFFER LAYER

SPIN MEMORY, INC., Wilmi...

1. A magnetic memory device comprising:a cylindrical core;
a metallic buffer layer that surrounds the cylindrical core;
a first ferromagnetic layer that surrounds the metallic buffer layer;
a barrier layer that surrounds the first ferromagnetic layer; and
a second ferromagnetic layer that surrounds the barrier layer, wherein the cylindrical core, the metallic buffer layer, the first ferromagnetic layer, the barrier layer, and the second ferromagnetic layer collectively form a magnetic tunnel junction,
wherein:
a magnetization of the first ferromagnetic layer parallels an interface of the metallic buffer layer and the first ferromagnetic layer; and
the metallic buffer layer reduces an interfacial anisotropy contribution, resulting from the interface between the metallic buffer layer and the first ferromagnetic layer, to an anisotropy of the first ferromagnetic layer, the interfacial anisotropy being in a direction that is perpendicular to the magnetization of the first ferromagnetic layer.

US Pat. No. 10,693,055

MAGNETIC MEMORY DEVICES

Samsung Electronics Co., ...

1. A magnetic random access memory (MRAM) device comprising:a magnetic tunnel junction (MTJ) including a free layer and a pinned layer sequentially stacked in a vertical direction; and
a conductive layer adjacent to the free layer of the MTJ, wherein the conductive layer comprises:
a horizontal portion; and
first and second protruding portions that protrude away from the horizontal portion and are spaced apart from each other in a horizontal direction that is perpendicular to the vertical direction,
wherein a side of the free layer and a side of the horizontal portion form a straight side.

US Pat. No. 10,693,054

MTJ BOTTOM METAL VIA IN A MEMORY CELL AND METHOD FOR PRODUCING THE SAME

GLOBALFOUNDRIES SINGAPORE...

1. A device comprising:a metal via disposed underneath a metal tunnel junction (MTJ) in a memory cell;
at least two metal interconnecting layers,
wherein a first metal interconnecting layer is disposed over the MTJ, and a second metal interconnecting layer is disposed underneath the metal via, and
wherein the metal via has an aspect ratio smaller than 2, and
wherein the first metal interconnecting layer has a wider pitch than the second metal interconnecting layer.

US Pat. No. 10,693,053

METHOD FOR PRODUCING INTRAVASCULAR ULTRASONIC TRANSDUCERS AND STRUCTURE THEREOF

SOGANG UNIVERSITY RESEARC...

1. An ultrasonic transducer structure comprising:a tube for insertion into a blood vessel for intravascular ultrasound (IVUS);
an ultrasonic transducer of a single element consisting of a stack comprising a matching layer, a piezoelectric material, and a backing layer, wherein the ultrasonic transducer is installed at an open end of the tube to obtain an ultrasonic image;
wherein the stack comprises, in sequence, the piezoelectric material, a first signal pad, a ground pad formed spaced apart from the first signal pad, a flexible printed circuit board (FPCB), and a second signal pad electrically connected to the first signal pad through a via penetrating the FPCB, and
a support positioned between one side wall of the tube and the ultrasonic transducer, the support having a surface in contact with the ultrasonic transducer that is angled relative to the longitudinal direction of the tube to form an angle at which the ultrasonic transducer is oriented, and to adjust the angle to make an ultrasonic radiation angle of the ultrasonic transducer different from an insertion angle of the tube.

US Pat. No. 10,693,052

SYSTEM AND METHOD FOR ENERGY HARVESTING IN A DATA CENTER

ABB Schweiz AG, Baden (C...

1. A system for generating from waste heat in a data center, electricity usable by computing devices in said data center, the system comprising:a first collection device configured and positioned to direct waste heat that is generated in a data center into a thermoelectric device;
a second collection device configured and positioned to direct an other input stream in the data center into the thermoelectric device, the other input stream being a room temperature air that is circulated through the data center as the waste heat is being generated;
said thermoelectric device configured for receiving (1) the waste heat from the first collection device, and (2) the other input stream from the second collection device, said thermoelectric device adapted to interpret a temperature gradient between the waste heat and the other input stream, and generate from said temperature gradient an electrical potential as an output;
a return plenum having an inlet side and an outlet side, the inlet side positioned to receive both the waste heat and the other input stream that circulated through the thermoelectric device, the return plenum configured to combine the received waste heat and the other input stream to form a mixed exhaust gas that is outputted from an outlet side of the return plenum for delivery to one or more components of the data center;
a controller for directing the conversion of said thermoelectric device-generated electrical potential to usable electricity, said usable electricity combinable with utility-input electricity to deliver a primary data center power feed to one or more computing devices in said data center;
a secondary power feed configured to deliver a secondary data center power feed to one or more computing devices in said data center upon an interruption in the delivery of the primary data center power feed, the secondary power feed being a redundant energy supply; and
an energy storage module adapted to store a backup power feed, the energy storage module being adapted for selective release of the backup power feed as input to the data center during an interruption to both the primary data center power feed and the secondary data center power feed.

US Pat. No. 10,693,051

THROUGH BACKPLANE LASER IRRADIATION FOR DIE TRANSFER

GLO AB, Lund (SE)

1. A method of manufacturing an assembly of a backplane and a light emitting device, the method comprising:providing the backplane containing first and second backplane-side bonding pads;
providing a substrate containing first and second light emitting devices thereupon, wherein a first device-side bonding pad is provided on the first light emitting device, and a second device-side bonding pad is provided on the second light emitting device;
bonding the first light emitting device to the backplane by irradiating a heating laser beam on a first solder material portion located between the first device-side bonding pad and the first backplane-side bonding pad; and
dissociating from the substrate the first light emitting device that is bonded to the backplane by irradiating an ablation laser beam through the substrate and onto each region of the substrate in contact with the first light emitting device;
wherein:
the first and second light emitting devices comprise vertical light emitting diodes in which the p-side and n-side contacts are located on opposite sides of the light emitting diode;
the substrate comprises a stack of a transparent material layer and an undoped III-V compound material layer; and
the ablation laser beam passes through the transparent material layer and ablates an irradiated portion of the undoped III-V compound material layer.

US Pat. No. 10,693,050

LIGHT EMITTING DIODE PACKAGE HAVING FRAME WITH BOTTOM SURFACE HAVING TWO SURFACES DIFFERENT IN HEIGHT

LG INNOTEK CO., LTD., Se...

1. A light emitting device, comprising:a substrate including a top surface, an outermost side surface, and a bottom surface;
a light emitting diode chip on the top surface of the substrate;
a reflecting member disposed on a first portion of the top surface of the substrate and the reflecting member having a cavity;
a first metal layer disposed on a second portion of the top surface, one side of the outermost side surface, and a first portion of the bottom surface;
a second metal layer disposed on a third portion of the top surface, another side of the outermost side surface, and a second portion of the bottom surface;
a heatsink disposed on the bottom surface of the substrate; and
at least two heatsink holes in the substrate formed to pass through the substrate,
wherein the at least two heatsink holes are in contact with the heatsink, and a reflective material is on an inside surface of the at least two heatsink holes,
wherein the first metal layer, the second metal layer, and the heatsink are separated from each other on the bottom surface of the substrate, and
wherein the at least two heatsink holes are vertically overlapped with the light emitting diode chip and the heatsink.

US Pat. No. 10,693,049

LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM COMPRISING SAME

LG INNOTEK CO., LTD., Se...

1. A light emitting device package comprising:a light emitting device including a lower surface, an upper surface opposite to the lower surface, and a side surface disposed between the lower surface and the upper surface;
a wavelength conversion member disposed on the light emitting device;
a first reflective member disposed on the wavelength conversion member; and
a second reflective member disposed between the first reflective member and the light emitting device,
wherein the side surface of the light emitting device includes a light extractive side surface and a reflective side surface,
wherein the second reflective member contacts the upper surface of the light emitting device and the reflective side surface of the light emitting device,
wherein the wavelength conversion member includes a light extractive side plane, a covered side plane, an upper plane, and a lower plane,
wherein the first reflective member covers the covered side plane and the upper plane of the wavelength conversion member,
wherein the lower surface of the light emitting device and the light extractive side plane of the wavelength conversion member are exposed,
wherein a side surface of the second reflective member is between the side surface of the light emitting device and the covered side plane of the wavelength conversion member and covers the reflective side surface of the light emitting device, and
wherein the side surface of the second reflective member is opened between the light extractive side plane of the wavelength conversion member and the light extractive side surface of the light emitting device.

US Pat. No. 10,693,048

FLIP-CHIP SMT LEDS WITH VARIABLE NUMBER OF EMITTING SURFACES

Lumileds LLC, San Jose, ...

1. A method of forming side emitting light-emitting diode (LED) units, the method comprising:arranging a plurality of LEDs in a pattern on a temporary support;
forming a secondary light-emitting layer that conforms to the plurality of LEDs, covering top and side-emitting surfaces of each of the plurality of LEDs:
after forming the secondary light-emitting layer, forming an optically transparent spacer layer over the plurality of LEDs;
forming an optically reflective layer over the optically transparent spacer layer to form a structure that includes at least the plurality of LEDs, the secondary light-emitting layer, the optically transparent spacer layer and the optically reflective layer; and
after the optically reflective layer is formed over the optically transparent spacer layer, singulating the structure into a plurality of LED units, each of the plurality of LED units including at least one of the plurality of LEDs, a portion of the secondary light-emitting layer, a portion of the transparent spacer layer formed over the at least one of the plurality of LEDs, and a portion of the reflective layer formed over the portion of the transparent spacer layer.

US Pat. No. 10,693,047

LIGHT SOURCE AND CORRESPONDING LUMINOUS MOTOR-VEHICLE MODULE

VALEO VISION, Bobigny (F...

1. Semiconductor light source for a luminous motor-vehicle module comprising:a semiconductor substrate;
a plurality of electroluminescent units of submillimeter dimensions formed on the semiconductor substrate, and
at least one positioning outgrowth grown from the semiconductor substrate and configured to position the light source with respect to the focal point of an optical part, wherein the at least one positioning outgrowth is higher than the electroluminescent units, the at least one positioning outgrowth being not electrically connected and the plurality of electroluminescent units being electrically connected to emit light.

US Pat. No. 10,693,046

CHIP SCALE PACKAGING LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

Maven Optronics CO., LTD....

1. A light emitting device comprising:a flip-chip light emitting diode (LED) semiconductor die comprising an upper surface, a lower surface opposite to the upper surface, an edge surface, and a set of electrodes, wherein the edge surface extends between the upper surface of the LED semiconductor die and the lower surface of the LED semiconductor die, and the set of electrodes is disposed on the lower surface of the LED semiconductor die; and
a packaging structure comprising:
a transparent soft buffer layer comprising a top portion and an edge portion, wherein the top portion is disposed in direct contact with the upper surface of the LED semiconductor die and comprises a convex surface, the edge portion is disposed in direct contact with the edge surface of the LED semiconductor die and comprises an extension surface, and the convex surface of the top portion of the transparent soft buffer layer adjoins the extension surface of the edge portion of the transparent soft buffer layer;
a photoluminescent structure disposed on the transparent soft buffer layer over the convex surface and the extension surface; and
an encapsulant structure disposed on the photoluminescent structure, wherein a hardness of the transparent soft buffer layer is selected so that the transparent soft buffer layer functions as a stress relief layer during thermal cycles of operating the light emitting device;
wherein the hardness of the transparent soft buffer layer is selected to be not greater than A80 in Shore hardness scale; and
wherein the hardness of the encapsulant structure is not lower than D30 in Shore hardness scale.

US Pat. No. 10,693,045

METHOD FOR ATTACHING LIGHT TRANSMISSIVE MEMBER TO LIGHT EMITTING ELEMENT FOR MANUFACTURING LIGHT EMITTING DEVICE

NICHIA CORPORATION, Anan...

1. A method of manufacturing a light emitting device, the method comprising:providing a light-transmissive member having a plate-like shape;
providing a plurality of light emitting elements each having a primary light emission surface and an electrode formation surface on a side opposite to the primary light emission surface;
bonding the light emitting elements to an upper surface of a base member such that the electrode formation surface of each of the light emitting elements faces the upper surface of the base member;
after the bonding of the light emitting elements to the upper surface of the base member, orienting the light emitting elements and the base member so that the primary emission surface of each of the light emitting elements face downwardly, bringing the light emitting elements into contact with a light-transmissive bonding member while the primary emission surface of each of the light emitting elements faces downwardly, and placing the bonding member on the primary light emission surface of each of the light emitting elements,
disposing the light emitting elements on an upper surface of the light-transmissive member such that the primary light emission surface of each of the light emitting elements faces the upper surface of the light-transmissive member via the bonding member interposed therebetween;
disposing a part of the bonding member on a lateral surface of each of the light emitting elements;
removing a part of the light-transmissive member to form a groove between the light emitting elements;
forming a light-reflective member at least in the groove; and
cutting the light-reflective member.

US Pat. No. 10,693,044

LIGHT-EMITTING APPARATUS INCLUDING PHOSPHOR

PANASONIC INTELLECTUAL PR...

17. A light-emitting apparatus comprising:a solid-state light source; and
a wavelength convertor,
wherein the solid-state light source is configured to emit first light including green light with a peak wavelength in a range of 480 to 550 nm, inclusive,
the wavelength convertor contains a red phosphor including Ce as a luminescent center,
the red phosphor is configured to be excited by at least part of the green light to emit second light,
the second light has a spectrum with a maximum peak wavelength in the range of 600 to 700 nm, inclusive, and
the red phosphor contains an oxide as a host material.

US Pat. No. 10,693,043

LIGHT EMITTING DIODE AND LED MODULE HAVING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode module comprising:a first conductivity type semiconductor layer having a width;
a mesa disposed over the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer;
an ohmic-contact structure in contact with the second conductivity type semiconductor layer of the mesa;
a lower insulating layer covering the mesa and disposed to provide a plurality of first openings exposing the first conductivity type semiconductor layer and a plurality of second openings exposing the ohmic-contact structure;
a current distributing layer electrically connected to the first conductivity type semiconductor layer through the plurality of first openings and disposed to provide a third opening exposing the plurality of second openings;
a diffusion preventing layer disposed in the third opening of the current distributing layer and extending over the lower insulating layer, wherein the diffusion preventing layer is electrically connected to the ohmic-contact structure exposed by the plurality of second openings;
an upper insulating layer disposed on the current distributing layer, the upper insulating layer forming a fourth opening providing a first electrode pad region and partially exposing the current distributing layer;
a first pad electrically connected to the first conductivity type semiconductor layer through the current distributing layer; and
a second pad electrically connected to the second conductivity type semiconductor layer through the diffusion preventing layer,
wherein the current distributing layer surrounds the diffusion preventing layer.

US Pat. No. 10,693,042

LIGHT-EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME

LG Display Co., Ltd., Se...

1. A light-emitting device, comprising:an n-type semiconductor layer;
a p-type semiconductor layer;
an active layer, the n-type semiconductor layer being disposed on a first side of the active layer, the p-type semiconductor layer being disposed on a second side of the active layer opposite to the first side; and
n-type electrodes and p-type electrodes disposed on both sides of the light-emitting device, such that an electrical connection is provided, even in a case in which the light-emitting device is inverted while being disposed on a substrate,
wherein the n-type semiconductor layer is directly electrically connected to a first n-type electrode among the n-type electrodes, the first n-type electrode being located on a first surface of the n-type semiconductor layer,
wherein the p-type semiconductor layer is directly electrically connected to a first p-type electrode among the p-type electrodes, the first p-type electrode being located on a first surface of the p-type semiconductor layer,
wherein the n-type semiconductor layer is electrically connected to a second n-type electrode among the n-type electrodes, the second n-type electrode being located on a second surface of the n-type semiconductor layer, opposite to the first surface of the n-type semiconductor layer, through a contact hole passing through the p-type semiconductor layer and the active layer,
wherein the p-type semiconductor layer is electrically connected to a second p-type electrode among the p-type electrodes, the second p-type electrode being on a second surface of the p-type semiconductor opposite to the first surface of the p-type semiconductor layer, the second p-type electrode surrounding the n-type semiconductor layer,
wherein the first n-type electrode directly electrically connected to the n-type semiconductor layer and the second n-type electrode electrically connected to the n-type semiconductor layer through the contact hole are physically separated each other, and
wherein the first p-type electrode directly electrically connected to the p-type semiconductor layer and the second p-type electrode electrically connected to the p-type semiconductor layer are physically separated each other.

US Pat. No. 10,693,041

HIGH-PERFORMANCE LED FABRICATION

SORAA, INC., Fremont, CA...

1. An LED package comprising:a substrate having a substrate top surface;
a plurality of contacts;
a reflective material disposed over at least a portion of said top surface, said reflective material not extending above said plurality of contacts; and
a first plurality of flip-chip LEDs and a second plurality of flip-chip LEDs, each having LED contacts, said LED contacts contacting said plurality of contacts, wherein the first and second pluralities of flip-chip LEDs have different emission colors.

US Pat. No. 10,693,040

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

SAMSUNG ELECTRONICS CO., ...

1. A light emitting device comprising:a semiconductor layer; and
a light emitting layer disposed in the semiconductor layer and having a composition ratio of Ga(1-x)Inx,N,
wherein x is greater than 0.22 but less than 0.26 to emit a green light satisfying a DCI-P3 reference, from the light emitting layer.

US Pat. No. 10,693,039

LIGHT-EMITTING ELEMENT HAVING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY

Epistar Corporation, Hsi...

1. A light-emitting device, comprising: a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack, a first insulating layer covering the reflective layer and a first transparent layer between the reflective layer and the light-emitting stack; a window layer with a rough surface; and a first conductive layer on the reflective structure; wherein the first insulating layer electrically isolates the reflective layer from the first conductive layer, and wherein the first transparent layer comprises a plurality of rods formed on the light-emitting stack, wherein the light-emitting stack comprises a first semiconductor layer, an active layer located on the first semiconductor layer and a second semiconductor layer located on the active layer, wherein a portion of the first semiconductor layer is exposed from the active layer and the second semiconductor layer.

US Pat. No. 10,693,038

SEMICONDUCTOR DEVICE

EPISTAR Corporation, Hsi...

1. A semiconductor device, comprising:a first semiconductor layer;
a second semiconductor layer on the first semiconductor layer;
an active region between the second semiconductor layer and the first semiconductor layer;
an electron blocking structure between the active region and the second semiconductor layer;
a first In-containing layer between the active region and the electron blocking structure, and the first In-containing layer comprising aluminum; and
a second In-containing layer between the electron blocking structure and the second semiconductor layer; wherein the first In-containing layer has a first indium content, the second In-containing layer has a second indium content, and the second indium content is greater than the first indium content.

US Pat. No. 10,693,037

LIGHT EMITTING DIODE STRUCTURE

Lextar Electronics Corpor...

1. A light emitting diode structure, comprising:a first type semiconductor layer;
an active layer;
a second type semiconductor layer, wherein the active layer is disposed between the first type semiconductor layer and the second type semiconductor layer;
a reflective stacked layer, comprising:
a pair of first reflective layers disposed at a side of the second type semiconductor layer opposing the active layer;
a second reflective layer which is disposed at a side of each of the first reflective layers opposing the second type semiconductor layer, and extends along lateral surfaces of each of the first reflective layers to a surface of the second type semiconductor layer, wherein the second reflective layer has a better resistance to migration than the first reflective layers;
a pair of first blocking layers disposed between the first reflective layers and the second reflective layer; and
a second blocking layer disposed at a side of the second reflective layer opposing the first reflective layers; and
a current blocking layer disposed between the first reflective layers, wherein the second reflective layer further comprises a first recess disposed at a side of the second reflective layer facing the second type semiconductor layer, and the current blocking layer is disposed in the first recess.

US Pat. No. 10,693,035

OPTOELECTRONIC DEVICE WITH A NANOWIRE SEMICONDUCTOR LAYER

Sensor Electronic Technol...

1. An optoelectronic device comprising:a contiguous first semiconductor layer;
a nanowire semiconductor layer comprising a plurality of semiconductor nanowires located directly adjacent to the contiguous first semiconductor layer, wherein each semiconductor nanowire in the plurality of nanowires includes:
a stress relieving layer located directly adjacent to the contiguous first semiconductor layer, the stress relieving layer comprising a heterostructure including at least one property for reducing stress; and
an active region located on an opposite side of the stress relieving layer as the contiguous first semiconductor layer, with the active region including semiconductor quantum wells and barriers;
a contiguous first p-type semiconductor layer located directly adjacent to an opposite side of the nanowire semiconductor layer as the contiguous first semiconductor layer, wherein the contiguous first p-type semiconductor layer comprises a short period superlattice, and wherein diameters of the plurality of semiconductor nanowires are monotonically increased in a proximity of the contiguous first p-type semiconductor layer until coalescence of nanowires into a single semiconductor layer; and
an n-type metallic contact layer located directly adjacent to the contiguous first semiconductor layer and the stress relieving layer of at least some of the plurality of semiconductor nanowires.

US Pat. No. 10,693,034

METHOD OF SELECTIVELY TRANSFERRING SEMICONDUCTOR DEVICE

EPISTAR CORPORATION, Hsi...

1. A method of transferring semiconductor devices from a first substrate to a second substrate, comprising:providing the semiconductor devices which are between the first substrate and the second substrate, wherein the semiconductor devices comprises a first semiconductor device and a second semiconductor device, and the first semiconductor device and the second semiconductor device have a first gap between thereof;
providing a picking unit for picking the first semiconductor device and the second semiconductor device from the first substrate;
separating the first semiconductor device and the second semiconductor device from the first substrate;
moving the picking unit and the second substrate relatively to the each other while maintaining a space between the picking unit and the second substrate; and
sticking the first semiconductor device and the second semiconductor device to a surface of the second substrate, wherein the first semiconductor device and the second semiconductor device have a second gap between thereof;
wherein the first gap and the second gap are different.

US Pat. No. 10,693,033

SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A SEMICONDUCTOR CHIP

OSRAM OLED GMBH, Regensb...

1. A semiconductor chip, having a semiconductor layer sequence with a first semiconductor layer, the first semiconductor layer having a lateral variation of a material composition and a constant thickness along at least one direction of extent, whereinthe semiconductor chip is embodied as a laser diode chip having a laser strip, in which light is generated during operation, and a facet, via which the light is emitted during the operation,
the first semiconductor layer has at least one first region and has second regions laterally adjacent to the at least one first region,
the first region and the second regions comprise a same material system,
a material composition of the first region is different from a material composition of the second regions, wherein the first region and the second regions have a same thickness,
the first region is formed in a region of the laser strip, and
the second regions are formed, in a lateral direction transversely in relation to a direction of extent of the laser strip, on both sides next to the laser strip.

US Pat. No. 10,693,032

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR, SEED SUBSTRATE AND GROUP III NITRIDE SEMICONDUCTOR CRYSTAL

TOYODA GOSEI CO., LTD., ...

1. A method for producing a Group III nitride semiconductor by growing a Group III nitride semiconductor, through a flux method using a molten mixture of alkali metal and a Group III metal, on a seed substrate,wherein the seed substrate includes a base substrate and a base layer comprising a Group III nitride semiconductor grown on the base substrate,
wherein a distribution of a dislocation density in the base layer has a two-dimensional periodic distribution in a direction parallel to a main surface thereof,
wherein the base layer has a high dislocation density region and a low dislocation density region having a dislocation density lower than that of the high dislocation density region, and the distribution of the dislocation density has a two-dimensional periodic pattern comprising the high dislocation density region and the low dislocation density region, and
wherein a method for producing the seed substrate comprises:
forming a precursor layer of the base layer on the base substrate;
forming a trench so as to reach the base substrate in the precursor layer by etching and making the remaining portion except the trench of the precursor layer the high dislocation density region; and
forming the low dislocation density region by laterally regrowing a Group III nitride semiconductor from a side surface of the trench through metalorganic chemical vapor deposition (MOCVD) and covering the trench to make the base layer.

US Pat. No. 10,693,030

SOLAR CELL

Industrial Technology Res...

1. A solar cell, comprising:a photoelectric conversion layer, having a front surface and a back surface;
a doped layer, disposed on the entire front surface of the photoelectric conversion layer;
a first passivation layer, disposed on the entire doped layer, wherein the first passivation layer has a plurality of openings, and the openings expose a portion of the doped layer;
an intrinsic amorphous silicon layer, disposed between the entire front surface of the photoelectric conversion layer and the entire doped layer;
a first transparent conductive oxide layer, disposed on the entire first passivation layer and in all of the openings, and directly contacting the exposed doped layer via the openings, wherein a ratio of an area of the openings to an area of the first transparent conductive oxide layer is between 0.01 and 0.5;
a front electrode, disposed on the first transparent conductive oxide layer; and
a back electrode, disposed on the back surface of the photoelectric conversion layer.

US Pat. No. 10,693,029

INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS WITH DOPED ALPHA LAYER

SolAero Technologies Corp...

1. A method of manufacturing a solar cell comprising:providing a first semiconductor substrate;
depositing on the first semiconductor substrate a sequence of layers of semiconductor material that forms a multijunction solar cell including first and second subcells with different lattice constants, an intermediate grading interlayer positioned between the first and second subcells with a graded lattice constant that matches the first subcell on a first side and the second subcell on the second side, and alpha layers grown in a reactor in the presence of a selenium or tellurium surfactant so that selenium or tellurium is doped into the alpha layers directly on each side of the grading interlayer to minimize threading dislocations from advancing from the grading interlayer into the adjacent first and second subcells, wherein each of the alpha layers has different constituent elements from the respective directly adjacent layer to each alpha layer and wherein each alpha layer is between 0.2 and 0.5 microns in thickness and doped with the selenium or tellurium from 1.0×1016 free carriers per cubic centimeter to 4.0×1017 free carriers per cubic centimeter;
mounting a surrogate second substrate on top of the sequence of layers; and
removing the first semiconductor substrate.

US Pat. No. 10,693,028

MICRO-CONCENTRATOR SOLAR ARRAY USING MICRO-ELECTROMECHANICAL SYSTEMS (MEMS) BASED REFLECTORS

The Boeing Company, Chic...

1. A micro-concentrator solar array, comprising:a substrate defining an inner surface and an outer surface, wherein the inner surface of the substrate is inclined with respect to the outer surface of the substrate;
a support member defining a first end and a second end, wherein the first end of the support member is affixed to the inner surface of the substrate;
a solar cell attached to the second end of the support member, wherein the solar cell includes a focal point;
a plurality of micro-electromechanical systems (MEMS) based reflectors arranged upon the substrate, wherein the MEMS based reflectors are each selectively tiltable about at least one axis to reflect a beam of light onto the focal point of the solar cell, and wherein the plurality of MEMS based reflectors are arranged into a plurality of sub-arrays including a subset MEMS based reflectors that are each arranged along the inner surface of the substrate and include graduated heights that result in a first beam of light reflected off of a first MEMS based reflector to not substantially interfere with a second beam of light reflected off of a second MEMS based reflector, the second MEMS based reflector being positioned downstream at a height less than the first MEMS based reflector; and
a control module connected to the solar cells and to the MEMS based reflectors, wherein the control module executes instructions to:
monitor an electrical output by the solar cell;
determine that the electrical output by the solar cell is below a threshold value, wherein the threshold value represents the electrical output generated by the solar cell that is less than an ideal output value, and wherein the ideal output value represents the electrical output of the solar cell when the MEMS based reflectors are each tilted to reflect the beam of light back towards the focal point of the solar cell; and
in response to determining the determining the electrical output is below the threshold value, re-position each of the MEMS based reflectors about the at least one axis to reflect the beam of light back towards the focal point of the solar cell.

US Pat. No. 10,693,027

METHOD FOR INTERCONNECTING SOLAR CELLS

ALTA DEVICES, INC., Sunn...

13. The method of claim 9, wherein an insulation material is dispensed on a side wall of the photovoltaic layer, the back metal layer, and the support substrate layer of a front via to form an insulation wall, and a conductive material dispensed within the space formed by the insulation wall.

US Pat. No. 10,693,026

PHOTOVOLTAIC MODULE COMPRISING A PLURALITY OF BIFACIAL CELLS AND METHOD FOR PRODUCING SUCH A MODULE

1. A method for producing a photovoltaic module having a front face intended to be exposed to solar radiation, the photovoltaic module comprising a plurality of bifacial photovoltaic cells, each bifacial photovoltaic cell having a first face and an opposing second face, and each bifacial photovoltaic cell exhibiting a short-circuit current ratio, said ratio being defined, for each bifacial photovoltaic cell, as being the ratio between:a first short-circuit current generated when the first face of said bifacial photovoltaic cell is illuminated, to
a second short-circuit current generated when the second face of said bifacial photovoltaic cell is illuminated,
wherein the first short-circuit current is different than the second short-circuit current, the method comprising:
asymmetrically cutting each bifacial photovoltaic cell into a first portion and a second portion, such that for a given bifacial photovoltaic cell a surface area ratio between the surface area of the second portion to the surface area of the first portion is substantially equal to the short-circuit current ratio of said bifacial photovoltaic cell or to the average short-circuit current ratio of the plurality of bifacial photovoltaic cells;
arranging the first face of the first portion and the second face of the second portion to coincide with the front face of the photovoltaic module, whereby the first face of the first portion and the second face of the second portion are intended to be exposed to solar radiation;
juxtaposing said bifacial photovoltaic cell portions in a main plane of the photovoltaic module to form a pair of bifacial photovoltaic cell portions, such that the first face of the first portion has a short-circuit current substantially equal to the short-circuit current of the second face of the second portion;
creating an electrical connection of the first face of the first portion with the second face of the second portion.

US Pat. No. 10,693,025

SOLAR CELL PANELS AND METHOD OF FABRICATING SAME

International Business Ma...

1. A structure comprising:a bottom cover plate of a solar cell panel having an electrically conductive bus bar on a top surface of the bottom cover plate;
a top cover plate of the solar cell panel having at least two electrically conductive lands in communication with a bottom surface of the top cover plate, the lands having a height extending from the bottom surface of the top cover plate, the top cover plate transparent to visible light; and
an array of rows and columns of solar cell chips between the bottom cover plate and the top cover plate, each solar cell chip of the array of solar cell chips comprising an anode adjacent to a top surface of the solar cell chip and a cathode adjacent to a bottom surface of the solar cell chip, the bus bar electrically contacting each cathode of each solar cell chip of the array of solar cell chips and each land in electrical communication with at least one anode of a solar cell chip of the array of solar cell chips, and further comprising forming a vacant opening between adjacent lands wherein the opening extends from the anode to the bottom surface of the top cover plate.

US Pat. No. 10,693,024

BARRIER ASSEMBLY

3M INNOVATIVE PROPERTIES ...

1. An assembly comprising, in order:a first polymeric film substrate;
a barrier film comprising at least first and second polymer layers separated by an inorganic barrier layer that is immediately adjacent to both the first and second polymer layers, the first and second polymer layers each comprising a polymeric reaction product of at least one of acrylic or methacrylic monomers;
an acrylic pressure sensitive adhesive layer; and
a second polymeric film substrate comprising a fluoropolymer and in direct contact with the acrylic pressure sensitive adhesive layer.

US Pat. No. 10,693,023

IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND CAMERA

CANON KABUSHIKI KAISHA, ...

1. An imaging apparatus comprising:a substrate made of single crystal silicon; and
an element isolation part formed by silicon oxide, the element isolation part being arranged on a side of a front surface of the substrate,
wherein the substrate includes a first semiconductor region and a second semiconductor region, the second semiconductor region being located between the front surface and the first semiconductor region,
wherein the first semiconductor region includes a first portion at a depth of 20 ?m from the front surface, the first semiconductor region having an oxygen concentration of 2×1016 atoms/cm3 to 4×1017 atoms/cm3,
wherein the second semiconductor region includes a second portion at a depth of 5 ?m from the front surface, the second semiconductor region having an oxygen concentration of 1×1016 atoms/cm3 to 4×1017 atoms/cm3,
wherein the second semiconductor region includes a third portion having an oxygen concentration of 8×1016 atoms/cm3,
wherein Cmax/Cmin?10, where Cmax is a maximum value of an oxygen concentration in the first and second semiconductor regions, and Cmin is a minimum value of the oxygen concentration in the first and second semiconductor regions,
wherein the substrate does not include, between the front surface and the second portion, a portion having an oxygen concentration of less than the minimum value, and
wherein a photoelectric conversion element is arranged in the second semiconductor region.

US Pat. No. 10,693,022

SOLAR CELL WITH SPECIFIC FRONT SURFACE ELECTRODE DESIGN

REC SOLAR PTE. LTD., Sin...

1. A solar cell comprising:a substrate including a front surface; and
front surface electrodes extending along the front surface, wherein the front surface electrodes comprise:
a plurality of elongate bus bar electrodes coupled to a plurality of first elongate finger electrodes arranged in a parallel finger region and second elongate finger electrodes arranged in a palm-finger region,
the first finger electrodes being substantially parallel to each other and perpendicular to the bus bar electrodes,
the second finger electrodes originating from end regions of the bus bar electrodes and radially extending at least in portions thereof in directions non-perpendicular to the bus bar electrodes, wherein the second finger electrodes divide into several branches upon extending radially away from an associated bus bar electrode, and
wherein a group of neighboring second finger electrodes and branches thereof originates from a same associated bus bar electrode and each electrode and branch of the group of neighboring second finger electrodes and branches thereof radially extends at a different angle with respect to the bus bar electrodes compared to each other electrode and branch of the group of neighboring second finger electrodes and branches thereof.

US Pat. No. 10,693,021

METHOD OF PASSIVATING A SILICON SUBSTRATE FOR USE IN A PHOTOVOLTAIC DEVICE

OPTITUNE OY, Oulu (FI)

1. A method of passivating a silicon substrate for use in a photovoltaic device, comprisingproviding a p-type silicon substrate having a bulk and exhibiting a front surface and a rear surface;
forming by liquid phase application a dielectric layer on at least said rear surface;wherein said dielectric layer is formed by polymerizing Al(iOPr)3, Ti(iOPr)4, and HSi(OR1)3, or Ti(iOPr)4, HSi(OR1)3, and TiCl4, or HSi(OR1)3, and Al(iOPr)3, wherein R1 is an alkyl group.

US Pat. No. 10,693,020

SEMICONDUCTOR DEVICE PACKAGE AND METHOD FOR USE THEREOF

TT ELECTRONICS PLC, Carr...

1. An optical detector device comprising:a glass substrate having a first metallic ring and first bond pads on a first side of the glass substrate, wherein the first bond pads are outside of a perimeter of the first metallic ring;
a semiconductor device having an optical detector exposed on a side facing the glass substrate, the semiconductor device further including a second metallic ring and second bond pads outside of a perimeter of the second metallic ring and electrically coupled to the first bond pads, wherein the first metallic ring and the second metallic ring are coupled to each other by a metal-metal bond to form a metallic seal structure bonding the first side of the glass substrate with the side of the semiconductor device facing the glass substrate; and
a plurality of conductive structures outside of a perimeter of the semiconductor device, the plurality of conductive structures being electrically coupled to the first bond pads.

US Pat. No. 10,693,019

FILM SCHEME FOR A HIGH DENSITY TRENCH CAPACITOR

Taiwan Semiconductor Manu...

1. A semiconductor structure comprising:a substrate defining a trench; and
a trench capacitor overlying the substrate and filling the trench, wherein the trench capacitor comprises:
a lower capacitor electrode;
a base capacitor dielectric layer overlying the lower capacitor electrode and lining the trench;
a first high ? capacitor dielectric layer and a second high ? capacitor dielectric layer each overlying the base capacitor dielectric layer and lining the trench over the base capacitor dielectric layer, wherein the first high ? capacitor dielectric layer has a dielectric constant ? greater than that of the base capacitor dielectric layer, and wherein the first and second high ? capacitor dielectric layers comprise the same material;
an intermediate capacitor electrode overlying, and lining the trench over, the lower capacitor electrode;
an upper capacitor electrode overlying the first and second high ? capacitor dielectric layers and the intermediate capacitor electrode, and further lining the trench over the first and second high ? capacitor dielectric layers and the intermediate capacitor electrode; and
a plurality of pairs of neighboring capacitor electrodes defined by the lower, intermediate, and upper capacitor electrodes and comprising a first pair and a second pair, wherein the first high ? capacitor dielectric layer and the base capacitor dielectric layer are the only dielectric layers between neighboring capacitor electrodes of the first pair, and wherein the second high ? capacitor dielectric layer is the only dielectric layer between neighboring capacitor electrodes of the second pair.

US Pat. No. 10,693,018

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING NON-VOLATILE MEMORY CELLS

TAIWAN SEMICONDUCTOR MANU...

1. A method of forming a semiconductor device including a non-volatile memory (NVM) cell, the method comprising:forming a semiconductor wire over an insulating layer disposed on a substrate;
forming a gate dielectric layer around the semiconductor wire;
forming a select gate electrode around the semiconductor wire wrapped by the gate dielectric layer;
forming a stacked dielectric layer around the semiconductor wire not covered by the select gate electrode and over the select gate electrode; and
forming a control gate electrode around the semiconductor wire wrapped by the stacked dielectric layer and adjacent to one face of the select gate electrode with a part of the stacked dielectric layer interposed therebetween.

US Pat. No. 10,693,017

SEMICONDUCTOR DEVICE HAVING A MULTI-THICKNESS NANOWIRE

SAMSUNG ELECTRONICS CO., ...

1. A semiconductor device, comprising:a substrate;
a nanowire extending in a first direction on the substrate;
a gate electrode surrounding a periphery of the nanowire and extending in a second direction intersecting with the first direction; and
a gate spacer formed on a side surface of the gate electrode, wherein
the nanowire includes a first center region overlapping the gate electrode and a first side region overlapping the gate spacer,
a first thickness of the first center region is different from a second thickness of the first side region,
the gate spacer includes an outer spacer, which is in contact with a side surface of the first side region, and an inner spacer, which is in contact with a lower surface or an upper surface of the first side region,
a width of the inner spacer decreases as a distance from the gate electrode decreases, and
a width of the first side region along a direction normal to the substrate decreases as a distance from the gate electrode increases.

US Pat. No. 10,693,016

DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

SAMSUNG DISPLAY CO., LTD....

1. A display apparatus, comprising:a thin film transistor on a first base substrate, the thin film transistor comprising:
a gate electrode disposed on the first base substrate;
an active pattern disposed on the first base substrate, the active pattern comprising:
a semiconductor layer including amorphous silicon, and
a first ohmic contact layer and a second ohmic contact layer disposed on the semiconductor layer;
a drain electrode corresponding to the first ohmic contact layer and spaced apart from the second ohmic contact layer, the drain electrode being a portion of a first conductive layer in contact with the active pattern; and
a source electrode corresponding to the second ohmic contact layer and spaced apart from the first ohmic contact layer, the source electrode being a portion of a second conductive layer different from the first conductive layer and in contact with the active pattern,
wherein
the source electrode has a second thickness which is greater than a first thickness of the drain electrode,
the source electrode comprises a first side surface adjacent to the drain electrode, a second side surface which is opposite to the first side surface, a lower surface facing the active pattern and an upper surface which is opposite to the lower surface,
a width of the upper surface of the source electrode is smaller than a width of the lower surface of the source electrode,
with respect to a normal direction to an upper surface of the first base substrate, the first side surface of the source electrode is inclined at a first inclination angle and the second side surface of the source electrode is inclined at a second inclination angle,
the first inclination angle is greater than the second inclination angle, and
the first side surface is closer to the drain electrode than the second side surface.

US Pat. No. 10,693,015

THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME

LG Display Co., Ltd., Se...

1. A thin film transistor comprising:an oxide semiconductor layer on a substrate, the oxide semiconductor layer including a channel portion, a first channel connecting portion connected to a first end of the channel portion, and a second channel connecting portion connected to a second end of the channel portion that is opposite the first end of the channel portion;
a gate insulating film on the channel portion of the oxide semiconductor layer;
a gate electrode on the gate insulating film;
a source electrode connected with the first channel connecting portion; and
a drain electrode spaced apart from the source electrode, the drain electrode connected with the second channel connecting portion,
wherein a thickness of the second channel connecting portion is different from a thickness of the first channel connecting portion, and the second end of the channel portion has a same thickness as the thickness of the second channel connecting portion,
wherein a thickness of the channel portion is equal to or greater than the thickness of the first channel connecting portion, and
wherein a conductorization permeation length of the channel portion at a side of the second channel connecting portion is longer than a conductorization permeation length of the channel at a side of the first channel connecting portion.

US Pat. No. 10,693,014

SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING THE DISPLAY DEVICE, AND ELECTRONIC APPLIANCE INCLUDING THE SEMICONDUCTOR DEVICE, THE DISPLAY DEVICE, AND THE DISPLAY MODULE

Semiconductor Energy Labo...

1. A semiconductor device comprising:a transistor comprising:
a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film; and
a source electrode and a drain electrode on and in contact with the oxide semiconductor film;
a first insulating film on and in contact with the source electrode, the drain electrode, and the oxide semiconductor film;
a second insulating film on and in contact with the first insulating film; and
a third insulating film on and in contact with the second insulating film,
wherein the gate insulating film includes a first layer comprising silicon nitride and a second layer comprising silicon oxynitride on the first layer,
wherein each of the first insulating film and the second insulating film comprises silicon oxynitride,
wherein the third insulating film comprises silicon nitride,
wherein a thickness of the second insulating film is larger than a thickness of the first insulating film and a thickness of the third insulating film, and
wherein a region of the second insulating film has a spin density corresponding to a signal that appears at g=2.001 lower than 1.5×1018 spins/cm3 by electron spin resonance measurement.

US Pat. No. 10,693,013

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Semiconductor Energy Labo...

1. A semiconductor device comprising:an oxide semiconductor comprise indium and zinc over a substrate;
a source and a drain over the oxide semiconductor;
a first insulating layer over the source and the drain, the first insulating layer having a trench between the source and the drain;
an oxide film over the oxide semiconductor;
a second insulating layer over the oxide film; and
a gate over the second insulating layer,
wherein:
a top surface of the first insulating layer and a top surface of the gate are polished surfaces, in which the top surface of the first insulating layer is approximately at the same level as the top surface of the gate,
the oxide film, the second insulating layer, and the gate are in the trench,
the oxide film includes a metal element contained in the oxide semiconductor,
the second insulating layer is in direct contact with a side surface of the first insulating layer,
the oxide semiconductor includes a first region overlapping with the source, a second region overlapping with the drain, and a third region overlapping the lowest surface of the gate, and
a first distance between a top surface of the third region and a bottom surface of the gate is longer than a second distance between the first region and the third region.

US Pat. No. 10,693,012

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor Energy Labo...

1. A semiconductor device comprising:a first insulating layer over a substrate;
a first oxide insulator over the first insulating layer;
an oxide semiconductor over the first oxide insulator;
a second oxide insulator over the oxide semiconductor;
a gate insulating layer over the second oxide insulator;
a gate electrode layer over the gate insulating layer;
a source electrode layer and a drain electrode layer over the oxide semiconductor; and
a second insulating layer over the first insulating layer,
wherein each of the first oxide insulator and the second oxide insulator comprises indium, an element M, and zinc,
wherein the element M is gallium, aluminum, titanium, yttrium, or tin,
wherein the oxide semiconductor comprises a first region, a second region, a third region, a fourth region, and a fifth region,
wherein the first region overlaps with the source electrode layer,
wherein the second region overlaps with the drain electrode layer,
wherein the third region overlaps with the gate electrode layer,
wherein the fourth region is in contact with the first region and the third region,
wherein the fifth region is in contact with the second region and the third region,
wherein an atomic ratio of an element N in each of the fourth region and the fifth region is higher than in each of the first region and the second region,
wherein the element N is hydrogen, nitrogen, helium, neon, argon, krypton, or xenon,
wherein the second insulating layer is in contact with an entire side surface of the first oxide insulator and an entire side surface of the oxide semiconductor which are parallel to a channel width direction, and
wherein the second insulating layer does not include a region having a level higher than a top surface of the source electrode layer or a top surface of the drain electrode layer.

US Pat. No. 10,693,011

THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE INCLUDING THIN FILM TRANSISTOR SUBSTRATE

Shenzhen China Star Optoe...

1. A method of manufacturing a thin film transistor (TFT) array substrate, comprising a step of preparing a patterned active layer on a base substrate, wherein the step comprises:sequentially forming an amorphous silicon (a-Si) thin film layer and a boron-doped (B-doped) amorphous silicon germanium (a-SiGe) thin film layer on the base substrate;
performing crystallization on the a-Si thin film layer and the B-doped a-SiGe thin film layer using a thermal annealing process to convert the a-Si thin film layer into a polycrystalline silicon (poly-Si) thin film layer and to convert the B-doped a-SiGe thin film layer into a B-doped polycrystalline silicon germanium (poly-SiGe) thin film layer; and
forming the patterned active layer by using a photolithography process to etch the poly-Si thin film layer and the B-doped poly-SiGe thin film layer, the active layer comprising an active region that includes a channel region and a source region and a drain region located at opposite sides of the channel region, wherein the active region is formed by etching the poly-Si thin film layer, the poly-SiGe thin film layer above the source region is remained to form a first contact layer, and the poly-SiGe thin film layer above the drain region is remained to form a second contact layer.

US Pat. No. 10,693,010

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Semiconductor Energy Labo...

1. A semiconductor device comprising:a gate electrode;
a gate insulating film over the gate electrode;
an oxide semiconductor film over the gate insulating film;
an electrode over and electrically connected to the oxide semiconductor film;
an oxide insulating film over the electrode and the oxide semiconductor film; and
a nitride insulating film over and in contact with the oxide insulating film,
wherein a side end surface of the electrode comprises a step,
wherein the oxide insulating film is in contact with the oxide semiconductor film, and
wherein the oxide insulating film comprises a void portion in a region covering the side end surface of the electrode.

US Pat. No. 10,693,009

STRUCTURE OF S/D CONTACT AND METHOD OF MAKING SAME

TAIWAN SEMICONDUCTOR MANU...

1. A method comprising:forming a first fin structure on a substrate;
forming a first semiconductor layer over the first fin structure;
forming a second semiconductor layer over the first semiconductor layer, the second semiconductor layer being formed of a different material than the first semiconductor layer;
forming a third semiconductor layer over the first fin structure, the third semiconductor layer being formed of the same material as the first semiconductor layer and physically contacting the first fin structure;
performing a treatment process on the first semiconductor layer, wherein the performing of treatment process on the first semiconductor layer includes performing the treatment process on the third semiconductor layer;
removing the treated first semiconductor layer, wherein after the removing of the treated first semiconductor layer, the treated third semiconductor layer is still disposed over the first fin structure; and
forming a conductive material on the second semiconductor layer after the removing of the treated first semiconductor layer.

US Pat. No. 10,693,008

CLADDING LAYER EPITAXY VIA TEMPLATE ENGINEERING FOR HETEROGENEOUS INTEGRATION ON SILICON

Intel Corporation, Santa...

1. A semiconductor apparatus comprising:a three-dimensional semiconductor body comprising a channel region and junction regions disposed on opposite sides of the channel region, the three-dimensional semiconductor body comprising:
a first material comprising a first band gap; and
a plurality of nanowires comprising a second material comprising a second band gap different than the first band gap, wherein the second material comprises silicon, the plurality of nanowires disposed in separate planes extending through the first material so that the first material surrounds each of the plurality of nanowires and is continuous between each of the plurality of nanowires in the channel region, wherein the first material comprises a group III and group V compound material; and
a gate stack disposed on the channel region, the gate stack comprising a gate electrode disposed on a gate dielectric.

US Pat. No. 10,693,007

WRAPPED CONTACTS WITH ENHANCED AREA

ELPIS TECHNOLOGIES INC., ...

1. A semiconductor device, comprising:a plurality of semiconductor fins, grouped into at least two regions;
fin extensions formed on the plurality of semiconductor fins that extend vertically and laterally beyond boundaries of the plurality of semiconductor fins;
a first dielectric layer, formed on sidewalls of the plurality of semiconductor fins and between the plurality of semiconductor fins within regions and between regions;
a shallow trench isolation structure positioned between regions on the first dielectric layer, having a bottom surface that is lower than a top surface of the first dielectric layer and having a lower portion, with lower sidewalls that taper toward the bottom surface, and an upper portion, with upper sidewalls that have a slope different from the lower sidewalls;
a conductive liner on the fin extensions that entirely covers the top surface of the first dielectric layer between the plurality of semiconductor fins and that entirely covers sidewalls of the shallow trench isolation structure; and
a conductive contact formed on the conductive liner.

US Pat. No. 10,693,006

INTERLAYER DIELECTRIC FOR NON-PLANAR TRANSISTORS

Intel Corporation, Santa...

1. An integrated circuit (IC) structure, comprising: a fin having a source and a drain; a transistor gate formed on the fin between the source and the drain, wherein the transistor gate comprises a gate electrode, a gate dielectric between the gate electrode and the fin, and a pair of sidewalls formed on opposing sides of the gate electrode; a capping structure over the gate electrode; spacers on the pair of sidewalls; an adhesion liner contacting the spacers; and a dielectric layer contacting the adhesion liner, wherein an upper portion of the dielectric layer has a higher density than a lower portion of the dielectric layer, wherein both the densified portion of the dielectric layer and a non-densified portion of the dielectric layer contact the adhesion liner.

US Pat. No. 10,693,005

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

International Business Ma...

1. A semiconductor device, comprising:a plurality of fins in an active region;
a plurality of gates around the plurality of fins in the active region;
one or more gate contacts in the active region;
a plurality of source/drain contacts to source/drain regions in the active region;
wherein one or more of the plurality of source/drain contacts are formed over less than a number of the plurality of fins in the active region;
wherein the one or more gate contacts overlap one or more fins of the plurality of fins in the active region lacking a source/drain contact formed thereon; and
wherein at least one fin of the number of the plurality of fins in the active region is electrically isolated from the one or more of the plurality of source/drain contacts.

US Pat. No. 10,693,004

VIA STRUCTURE WITH LOW RESISTIVITY AND METHOD FOR FORMING THE SAME

Taiwan Semiconductor Manu...

1. A semiconductor device structure, comprising:a gate stack over a substrate;
an insulating capping layer over the gate stack;
gate spacers on opposite sides of the gate stack and capped by the insulating capping layer, wherein one of the gate spacers has a sidewall opposite to gate stack and substantially level with a sidewall of the insulating capping layer, and wherein the gate spacers protrude above the upper surface of the gate stack, and the insulating capping layer has a T-shaped profile and covers upper surfaces of the gate spacers;
a source/drain contact structure adjacent to the gate stack and having an upper surface that is substantially level with an upper surface of the insulating capping layer;
a first via structure passing through the insulating capping layer and electrically connected to the gate stack; and
a second via structure above and electrically connected to the source/drain contact structure, wherein the first via structure and the second via structure have different vertical heights.