1. An electronic device comprising a transistor component having a semiconductor layer comprising a semiconducting electronic material, a dielectric layer comprising an insulating electronic material, and source, drain, and gate electrodes each comprising a conducting electronic material, wherein the transistor component comprises:an organic material comprising a linear polymer having a repeating unit of formula (A):
wherein:X and Y independently are selected from the group consisting of CH2, CHR, CR2, C(O), SiH2, SiHR, SiR2, NH, NR, O, and S, whereinR is selected from the group consisting of a halogen, ORa, C(O)ORa, OC(O)Ra, NRbRc, C(O)NRbRc, OC(O)NRbRc, a C1-10 alkyl group, a C1-10 haloalkyl group, and an optionally substituted aryl or heteroaryl group,
Ra is a C1-10 alkyl group or a Si(C1-10 alkyl)3 group, and
Rb and Rc independently are H or a C1-10 alkyl group;WZ is CH?CH orR1, R2, R3, and R4 independently are selected from the group consisting of H, ORd, C(O)ORd, OC(O)ORd, a C1-10 alkyl group, a C1-10 haloalkyl group, and L-Q, whereinL is selected from the group consisting of O, C(O), a divalent C1-10 alkyl group, a divalent C6-18 aryl group, a covalent bond, and combinations thereof,
Q is a crosslinkable group comprising, a CH?CH2 moiety, a CH?CHCH3 moiety, a CH?C(CH3)2 moiety, a C(CH3)?CH2 moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, an epoxy moiety, or a combination thereof, and
Rd is H or a C1-10 alkyl group,provided that at least one of R1, R2, R3, and R4 is L-Q; andm is 0, 1 or 2;wherein either the dielectric layer comprises the organic material as the insulating electronic material or the organic material is in contact with at least one of the semiconducting electronic material, the insulating electronic material, and the conducting electronic material.