US Pat. No. 9,357,643

CERAMIC/COPPER CIRCUIT BOARD AND SEMICONDUCTOR DEVICE

KABUSHIKI KAISHA TOSHIBA,...

1. A ceramic/copper circuit board comprising:
a ceramic substrate having a first surface and a second surface;
a first copper plate bonded to the first surface of the ceramic substrate via a first bonding layer containing at least one
active metal element selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al), and
niobium (Nb) and at least one element selected from the group consisting of silver (Ag), copper (Cu), tin (Sn), indium (In),
and carbon (C); and

a second copper plate bonded to the second surface of the ceramic substrate via a second bonding layer containing at least
one active metal element selected from the group consisting of titanium (Ti), zirconium (Zr), hafnium (Hf), aluminum (Al),
and niobium (Nb) and at least one element selected from the group consisting of silver (Ag), copper (Cu), tin (Sn), indium
(In), and carbon (C),

wherein each of end portions of the first and second copper plates has a shape in which a ratio (C/D) of an area C in relation
to an area D is from 0.2 to 0.6, wherein in cross sections of the end portions of the first and second copper plates, a point
A is a bonding edge of the copper plate and the ceramic substrate, a point B is a point where a straight line drawn from the
point A toward an inner side of an upper surface of the copper plate in a direction of 45° in relation to an interface of
the copper plate and the ceramic substrate intersects with the upper surface of the copper plate, a line AB is a straight
line connecting the point A and the point B, the area C is a cross section area of a portion protruded from the line AB toward
an outer side direction of the copper plate, and the area D is a cross section area of a portion corresponding to a right-angled
triangle whose hypotenuse is the line AB,

wherein R-shape sections are provided at edges of the upper surfaces of the first and second copper plates corresponding to
a corner portion of the area C, and each of lengths F of the R-shape sections viewed from the above of the first and second
copper plates is 10 ?m or more and 100 ?m or less, and

wherein end portions of the first and second bonding layers are protruded from the end portions of the first and second copper
plates, respectively, and each of lengths E of the end portions of the first and second bonding layers protruded from the
end portions of the first and second copper plates is from 10 ?m to 150 ?m.

US Pat. No. 9,057,569

CERAMIC HEAT SINK MATERIAL FOR PRESSURE CONTACT STRUCTURE AND SEMICONDUCTOR MODULE USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate,
which is any one of a silicon nitride substrate, an aluminum oxide substrate, and an aluminum nitride substrate and has a
surface roughness Ra in a range of 0.1 to 5 ?m and a three-point bending strength of 300 MPa or more, wherein the resin layer
has durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic
substrate and the resin layer is 3 ?m or less.

US Pat. No. 9,214,626

RESISTANCE CHANGE MEMORY DEVICE

TOKYO INSTITUTE OF TECHNO...

1. A resistance change memory device comprising:
a first electrode containing a first element;
a resistance change layer provided on the first electrode and containing an oxide of the first element;
an oxygen conductive layer provided on the resistance change layer, containing a second element and oxygen, having oxygen
ion conductivity, and having a relative permittivity higher than a relative permittivity of the resistance change layer; and

a second electrode provided on the oxygen conductive layer,
configured such that the resistance change layer undergoes dielectric breakdown earlier than the oxygen conductive layer when
a voltage between the first electrode and the second electrode is continuously increased from zero.

US Pat. No. 9,334,193

WEAR RESISTANT MEMBER, AND METHOD FOR MANUFACTURING THE WEAR RESISTANT MEMBER

KABUSHIKI KAISHA TOSHIBA,...

1. A wear resistant member comprising a ceramic sintered body, the ceramic sintered body comprising:
silicon nitride,
10 to 3,500 ppm by mass of a Fe component in terms of Fe element,
more than 1,000 ppm up to 2,000 ppm by mass of a Ca component in terms of Ca element,
1 to 2,000 ppm by mass of a Mg component in terms of Mg element,
1 to 5 mass % of a rare earth component in terms of a rare earth element, and
1 to 5 mass % of an Al component in terms of Al element;
wherein in the ceramic sintered body:
a ?-phase ratio of silicon nitride crystal grains is 95% or more,
an average aspect ratio, which is defined as an average value of respective aspect ratios of silicon nitride crystal grains,
is 2 or more,

a maximum longer diameter of the silicon nitride crystal grains in the ceramic sintered body is 40 ?m or less, and
a grain boundary phase comprises amounts of the Ca component and Mg component that are below a detection limit of XRD (X-ray
diffraction);

wherein the Ca component and the Mg component have been substantially changed into an amorphous form in the ceramic sintered
body, and

wherein the ceramic sintered body comprises a ground surface having a surface roughness Ra of 1 ?m or less; and
wherein the ceramic sintered body has a Vickers hardness of 1,430 or more, a fracture toughness of 6.0 MPa·m1/2 or more and a density of 3.18 g/cm3 or more; and

wherein the dispersion of the hardness, fracture toughness and density of the wear resistant member is within a range of ±10%.

US Pat. No. 9,466,882

ANTENNA MAGNETIC CORE, ANTENNA USING SAME, AND DETECTION SYSTEM

KABUSHIKI KAISHA TOSHIBA,...

1. An antenna magnetic core, comprising
a laminate including ten or more of Co-based amorphous magnetic alloy thin strips which are laminated and each has an average
thickness in a range of from 10 to 30 ?m, and resin layer parts which are respectively provided between the laminated Co-based
amorphous magnetic alloy thin strips and each has an average thickness in a range of from 1 to 10 ?m,

wherein each of the resin layer parts is made of a solid body of a semi-cured resin;
a dispersion of thicknesses of each of the resin layer parts is within ±40% in relation to the average thickness; and
each of the resin layer parts does not have a gap therein.

US Pat. No. 9,193,903

SOLID SCINTILLATOR, RADIATION DETECTOR, AND RADIATION EXAMINATION DEVICE

Kabushiki Kaisha Toshiba,...

1. A solid scintillator, comprising:
a polycrystal body of an oxide having a garnet structure, and a composition requested by a general formula:
(Gd1??????Tb?Lu?Ce65 )3(Al1?xGAx)aOb where, ?, ?, and ? are numbers, which are atomic ratios, satisfying 0 wherein a linear transmittance at a wavelength of 680 nm is 10% or more.

US Pat. No. 9,440,887

SILICON NITRIDE SINTERED BODY AND WEAR RESISTANT MEMBER USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A wear resistant member composed of a silicon nitride sintered body comprising a silicon nitride crystalline particle and
a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 ?m×100
?m unit area of 15 to 35% when an arbitrary cross section thereof is photographed,
wherein a total area ratio of the silicon nitride crystalline particle having a major axis L of 1 ?m or more in a 100 ?m×100
?m unit area is 60% or more, and any aspect ratio (major axis L/minor axis S) of the silicon nitride crystalline particles
having a major axis of 1 ?m or more is 7 or less,

wherein a machinable coefficient of the silicon nitride sintered body is within a range from 0.120 to 0.150, and
wherein a sliding surface of the silicon nitride sintered body is a polished surface having a surface roughness Ra of 0.1
?m or less.

US Pat. No. 9,409,144

CATION ADSORBENT FOR SOLUTION TREATMENT

Kabushiki Kaisha Toshiba,...

1. A cation adsorbent, comprising:
tungsten oxide particles having a BET specific surface area in a range of 0.82 m2/g or more and 820 m2/g or less,

wherein a cation to be adsorbed by the cation adsorbent is at least one ion selected from the group consisting of a cesium
(Cs) ion and a strontium ion (Sr), and an adsorption ratio of at least one ion selected from the group consisting of the cesium
(Cs) ion and the strontium (Sr) ion is higher than an adsorption ratio of at least one ion selected from the group consisting
of a magnesium (Mg) ion, a calcium (Ca) ion, and a potassium (K) ion under an environment in which at least one ion selected
from the group consisting of the magnesium (Mg) ion, the calcium (Ca) ion, and the potassium (K) ion exists together.

US Pat. No. 9,551,467

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source comprising: a blue light emitting diode having a light emission peak wavelength in a range of 421
to 490 nm; and a phosphor layer including phosphor and resin, wherein the phosphor layer contains three or more types of phosphor
selected from among a blue phosphor, a blue-green phosphor, a green phosphor, a yellow phosphor, and a red phosphor, and a
mass ratio of the phosphor included in the phosphor layer is 5 mass % or more and 50 mass % or less,
wherein the white light source satisfies a relational equation of ?0.2?[(P(?)×V(?))/ (P(?max1)×V(?max1))?(B(?)×V(?))/(B(?max2)×V(?max2))]?+0.2,
assuming that: a light emission spectrum of the white light source is P(?); a light emission spectrum of black-body radiation
having a same color temperature as that of the white light source is B(?); a spectrum of a spectral luminous efficiency is
V(?); a wavelength at which P(?)×V(?) becomes largest is ?max1; and a wavelength at which B(?)×V(?) becomes largest is ?max2,
and

wherein an amount of chromaticity change on CIE chromaticity diagram from a time of initial lighting up of the white light
source to a time after the white light source is continuously lighted up for 6000 hours is less than 0.010.

US Pat. No. 9,228,718

LED LIGHT BULB

KABUSHIKI KAISHA TOSHIBA,...

1. An LED light bulb, comprising:
an LED module including a substrate and an ultraviolet to violet light-emitting LED chip mounted on a surface of the substrate;
a base part on which the LED module is disposed;
a globe including an attaching part attached on the base part to cover the LED module, and having a shape in which a cross
section in a direction in parallel to the surface of the substrate is circular;

a phosphor screen, provided on an inner surface of the globe separately from the LED chip, emitting white light by absorbing
ultraviolet to violet light emitted from the LED chip;

a lighting circuit provided in the base part and lighting the LED chip; and
a bayonet cap electrically connected to the lighting circuit,
wherein the globe has a dome shape in which a diameter Dl at the attaching part is smaller than a diameter D2 at a maximum portion of the cross section, and a ratio D2/D1 of the diameter D2 to the diameter D1 is in a range of from 1.07 to 1.61.

US Pat. No. 9,834,830

TUNGSTEN ALLOY, TUNGSTEN ALLOY PART, DISCHARGE LAMP, TRANSMITTING TUBE, AND MAGNETRON

Kabushiki Kaisha Toshiba,...

1. A tungsten alloy comprising a W component and a Hf component comprising HfC, wherein a content of the Hf component in terms
of HfC is 0.1 wt % or more and 3 wt % or less, the Hf component comprises metal Hf existing on a surface of the Hf component,
and the tungsten alloy has a Vickers hardness of Hv 330 or more.

US Pat. No. 9,115,855

WHITE LIGHT SOURCE

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source, comprising:
a light-emitting diode; and
a phosphor layer absorbing a light radiated from the light-emitting diode to emit a white light;
the phosphor layer including a blue phosphor of from 30 to 60 mass %, a blue-green phosphor of from 5 to 20 mass %, at least
one phosphor selected from a green phosphor and a yellow phosphor of from 3 to 20 mass %, and a red phosphor of from 20 to
50 mass %;

the white light having a color temperature of 2600 [K] or more and less than 3200 [K] and an emission spectrum which has a
wavelength region of from 450 to 610 [nm]; and

a ratio of a minimum emission intensity to a maximum emission intensity in the wavelength region being 0.16 or more and less
than 0.35.

US Pat. No. 10,047,265

RARE EARTH REGENERATOR MATERIAL PARTICLE, RARE EARTH REGENERATOR MATERIAL PARTICLE GROUP, AND COLD HEAD, SUPERCONDUCTING MAGNET, EXAMINATION APPARATUS, AND CRYOPUMP USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A rare earth regenerator material particle, comprising a rare earth element as a constituent component,wherein a peak indicating a carbon component and a peak indicating a compound containing the rare earth element and oxygen are detected in a surface region of the particle by an X-ray photoelectron spectroscopy analysis,
an entire content of carbon in the particle including the carbon component is 5 mass ppm or more and 50 mass ppm or less, and
the carbon component detected in the surface region of the particle has at least one selected from the group consisting of a C—C bond, a C—H bond, a C—O bond, a C?O bond, and an O—C?O bond.

US Pat. No. 9,101,065

CERAMIC CIRCUIT BOARD AND PROCESS FOR PRODUCING SAME

Kabushiki Kaisha Toshiba,...

1. A method for the production of a ceramic circuit board, comprising:
providing a first masking on a part other than an area to be a copper circuit pattern and a brazing material protrudent part
on a ceramic substrate;

forming a brazing material layer comprising Ag, Cu and Ti on an area other than the first masking on the ceramic substrate;
mounting a copper plate on the brazing material layer and bonding the ceramic substrate and the copper plate by heating;
providing a second masking on an area to be a copper circuit pattern on the copper plate; and
forming a copper circuit pattern by etching.

US Pat. No. 9,231,150

PHOSPHOR FOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A phosphor for a light emitting device which has an LED chip emitting ultraviolet to blue light, comprising:
a phosphor particle composed of an europium and manganese-activated alkaline earth silicate phosphor emitting green to yellow
light, the europium and manganese-activated alkaline earth silicate phosphor having a composition represented by a general
formula:

(Sr2-x-y-z-uBaxMgyEuzMnu)SiO4 wherein x is a numeral (atomic ratio) satisfying 0.1?x?1.69,y is a numeral (atomic ratio) satisfying 0.01?y?0.05,z is a numeral (atomic ratio) satisfying 0.025?z?0.25, andu is a numeral (atomic ratio) satisfying 0.001?u?0.01; and
a surface treatment agent of at least one selected from a silane coupling agent and an acrylic emulsion, the surface treatment
agent being provided to cover a surface of the phosphor particle,

wherein a luminance maintenance ratio is 98% or more, wherein the luminance maintenance ratio is represented by a formula:
luminance B/luminance A×100(%),
the luminance A is an initial luminance obtained by making the phosphor emit under a condition of a temperature of 23° C.
and a humidity of 40%, and the luminance B is a luminance obtained by making the phosphor emit under a condition of a temperature
of 23° C. and a humidity of 40% after leaving the phosphor under a condition of a temperature of 60° C. and a humidity of
90% for 12 hours.

US Pat. No. 9,217,794

SCINTILLATOR ARRAY, AND X-RAY DETECTOR AND X-RAY EXAMINATION DEVICE USING SCINTILLATOR ARRAY

Kabushiki Kaisha Toshiba,...

1. A scintillator array, comprising:
a plurality of scintillator blocks; and
a reflective layer part, interposed between adjacent scintillator blocks to integrate the plurality of scintillator blocks,
the reflective layer part comprising a transparent resin and reflective particles dispersed in the transparent resin, wherein
the reflective particles include at least one type of particle selected from the group consisting of titanium oxide particles
and tantalum oxide particles, and have a mean particle diameter of 2 ?m or less;

wherein a number of the reflective particles existing per unit area of 5 ?m×5 ?m of the reflective layer part is in a range
of 100 or more and 250 or less;

wherein each of the scintillator blocks has an R-shaped portion at an end portion thereof, and the R-shaped portion has a
shape wherein a ratio of a width W2 of the R-shaped portion to a width W1 of the scintillator block is in a range of 0.007 to 0.02, and a ratio of a thickness T2 of the R-shaped portion to a thickness T1 of the scintillator block is in a range of 0.006 to 0.02; and

wherein a warpage amount of the scintillator array is 0.2 mm or less.

US Pat. No. 9,161,752

RHENIUM TUNGSTEN WIRE, METHOD OF MANUFACTURING THE WIRE AND MEDICAL NEEDLE USING THE WIRE

KABUSHIKI KAISHA TOSHIBA,...

1. A rhenium tungsten wire, comprising:
tungsten; and
10-30 mass % of rhenium,
having a wire diameter D of 0.10-0.40 mm,
wherein a crystal grain size of the rhenium tungsten wire is 10 to 50 ?m and a tensile strength T (N/mm2) of the rhenium tungsten wire is within a range specified by equation (1)

6314.6×D2?7869.3×D+4516.3?T?5047.4×D2?7206.4×D+5129.2  (1).

US Pat. No. 9,112,120

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source satisfying a relational equation of
?0.2?[(P(?)×V(?))/(P(?max1)×V(?max1))?(B(?)×V(?))/(B(?max2)×V(?max2))]?+0.2,

assuming that: a light emission spectrum of the white light source is P(?); a light emission spectrum of black-body radiation
having a same color temperature as that of the white light source is B(?); a spectrum of a spectral luminous efficiency is
V(?); a wavelength at which P(?)×V(?) becomes largest is ?max1; and a wavelength at which B(?)×V(?) becomes largest is ?max2.

US Pat. No. 9,556,374

RARE-EARTH REGENERATOR MATERIAL PARTICLES, AND GROUP OF RARE-EARTH REGENERATOR MATERIAL PARTICLES, REFRIGERATOR AND MEASURING APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. Regenerator material particles, comprising a rare-earth metal and having an average particle size of 0.045 to 0.5 mm,
wherein a proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number,
a proportion of particles having a depressed portion haying a length of 1/10 to ½ of a particle circumferential length on a particle surface is 30% or more by number and wherein the depressed portion
has a depth of 1/10 or less of a particle diameter, and the depressed portion has a channel-shape or a hole-shape, and

wherein the number of the depressed portion per one regenerator material particle is 1 or 2.

US Pat. No. 9,356,101

POLYCRYSTALLINE ALUMINUM NITRIDE BASE MATERIAL FOR CRYSTAL GROWTH OF GAN-BASE SEMICONDUCTOR AND METHOD FOR MANUFACTURING GAN-BASE SEMICONDUCTOR USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A polycrystalline aluminum nitride base material for use as a substrate material for grain growth of GaN-base semiconductors,
the polycrystalline aluminum nitride base material containing 1 to 10% by weight of a sintering aid component and having a
thermal conductivity of not less than 150 W/m·K, and the substrate having a surface free from recesses having a maximum diameter
of more than 200 ?m,
wherein the sintering aid component comprises one or more materials selected from the group consisting of rare earth elements,
rare earth element oxides, and rare earth element-aluminum oxides,

the recesses are any one of pores, traces after dropping of AlN crystal grains, and traces after dropping of the sintering
aid component,

the polycrystalline aluminum nitride base material comprises an aluminum nitride crystal and a grain boundary phase, grains
of the aluminum nitride crystal having a mean diameter of not less than 1 ?m and not more than 7 ?m, and

the substrate surface has a skewness (Rsk) of +0.5 to ?0.5, and

the substrate has a diameter of not less than 50 mm.

US Pat. No. 9,196,900

SUBSTRATE AND SECONDARY BATTERY

Kabushiki Kaisha Toshiba,...

1. A substrate comprising a semiconductor layer comprising tungsten oxide particles having a first peak in a range of 268
to 274 cm?1, a second peak in a range of 630 to 720 cm?1, and a third peak in a range of 800 to 810 cm?1 in Raman spectroscopic analysis, said semiconductor layer having a thickness of ±5 ?m to 300 ?m, a porosity of 35 to 80 vol
%, and an average pore size of 5 nm or more.

US Pat. No. 9,487,696

PHOSPHOR OF SIALON CRYSTAL, METHOD FOR PRODUCING PHOSPHOR AND LIGHT EMITTING DEVICE

Kabushiki Kaisha Toshiba,...

1. A phosphor comprising a cerium-activated Sialon crystal having at least one basic composition selected from the group consisting
of:
(Sr1-x,Cex)2.0Si7Al3ON13;

(Sr1-x,Cex)2.0Si8Al3O0.1N12;

(Sr1-x,Cex)2.0Si7.2Al2O0.5N13;

(Sr1-x,Cex)3.0Si9Al3O0.7N15;

(Sr1-x,Cex)2.0Si8Al4ON14;

(Sr1-x,Cex)2.8Si8Al4O0.5N15;

(Sr1-x,Cex)2.0Si7Al2.5O0.1N12;

(Sr1-x,Cex)2.0Si6Al4ON14;

(Sr1-x,Cex)2.0Si8Al2.7O0.6N13; and

(Sr1-x,Cex)2.0Si7Al2.1O0.2N14,

wherein x is 0 wherein the phosphor includes particles having a Wadell's sphericity of 0.65 or more and emits yellow light by being excited
by ultraviolet light, violet light or blue light, and

wherein the Wadell's sphericity (?) is defined by the formula:
?=(A surface area of a sphere having a same volume as that of an actual particle)/(A surface area of an actual particle).

US Pat. No. 9,381,889

ANTENNA CORE AND METHOD OF MANUFACTURING THE SAME, AND ANTENNA AND DETECTION SYSTEM USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A detection system, comprising:
a transmitter transmitting a specific radio signal; and
a receiver including an antenna receiving the radio signal to detect the transmitter,
wherein the antenna comprises,
an antenna core including a laminate of a plurality of Co-based amorphous magnetic alloy thin strips in which a length ratio
of a long axis to a short axis is greater than 1, and

a winding wound around the antenna core along the long axis, and
wherein 60% or more of the plural Co-based amorphous magnetic alloy thin strips in terms of the number of the thin strips
as percentage each have a line-shaped mark formed along the long axis on at least one surface thereof.

US Pat. No. 9,321,034

AQUEOUS DISPERSION LIQUID AND COATING MATERIAL, FILM, AND PRODUCT USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A photocatalytic material, comprising:
a substrate; and
a photocatalytic film, formed on the substrate, containing particles selected from the group consisting of tungsten oxide
particles and tungsten oxide composite particles,

wherein a mean primary particle diameter (D50) of the particles is from 1 nm to 400 nm,
wherein the tungsten oxide composite contains at least one metal element selected from transition metal elements and aluminum,
or a compound including at least one metal element selected from transition metal elements and aluminum, in a range of 0.001
mass% to 50 mass% as an amount of the metal element, balanced by tungsten oxide,

wherein, when a surface state of the particles in the photocatalytic film is observed by a fourier-transform infrared absorption
spectroscopy, an absorption peak based on hydroxyl exists in a vicinity of 3700 cm?1 of an absorption spectrum obtained by the fourier-transform infrared absorption spectroscopy, and

wherein the photocatalytic film exhibits photocatalytic performance when visible light is irradiated, wherein the tungsten
oxide which constitutes the particles has a crystal structure, and

wherein the crystal structure includes a mixture of a monoclinic crystal of tungsten trioxide, a triclinic crystal of tungsten
trioxide, and a rhombic crystal of tungsten trioxide.

US Pat. No. 9,277,639

SEMICONDUCTOR CIRCUIT BOARD, SEMICONDUCTOR DEVICE USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CIRCUIT BOARD

KABUSHIKI KAISHA TOSHIBA,...

1. A semiconductor circuit board in which a conductor portion is provided on an insulating substrate, wherein a surface roughness
of a semiconductor element-mounting section of the conductor portion is 0.3 ?m or lower in arithmetic average roughness Ra,
2.5 ?m or lower in ten-point average roughness Rzjis, 2.0 ?m or smaller in maximum height Rz, and 0.5 ?m or lower in arithmetic
average waviness Wa.
US Pat. No. 9,443,648

MAGNETIC SHEET FOR NON-CONTACT POWER RECEIVING DEVICE, NON-CONTACT POWER RECEIVING DEVICE, ELECTRONIC APPARATUS, AND NON-CONTACT CHARGER

KABUSHIKI KAISHA TOSHIBA,...

1. A magnetic sheet for non-contact power receiving device, comprising:
a laminate including a first magnetic thin plate and a second magnetic thin plate laminated to the first magnetic thin plate
via an adhesive layer portion,

wherein the first magnetic thin plate is made of a stainless steel, and has a thickness of from 50 ?m to 300 ?m,
wherein the second magnetic thin plate is made of a Co-based amorphous alloy or an Fe-based microcrystalline alloy having
an average crystal grain diameter of from 5 nm to 30 nm, and has a thickness of from 10 ?m to 30 ?m, and

wherein the magnetic sheet is configured to be used for the non-contact power receiving device.

US Pat. No. 9,382,613

SPUTTERING TARGET, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT

KABUSHIKI KAISHA TOSHIBA,...

1. A sputtering target made up of a titanium material of which purity is 99.99 mass % or more and an average crystal grain
size is 15 ?m or less,
wherein the sputtering target has a surface to be sputtered, and
wherein, when X-ray diffraction of the surface is measured, a relative intensity I(100) of a diffraction peak from a (100) plane, a relative intensity I(002) of a diffraction peak from a (002) plane, and a relative intensity I(101) of a diffraction peak from a (101) plane satisfy a condition of I(101)>I(002)>I(100) at the surface,

wherein, when X-ray diffraction at a part parallel to the surface in a depth direction of the sputtering target is measured,
the relative intensity I(100), the relative intensity I(002), and the relative intensity I(101) satisfy a condition of I(101)>I(002)>I(100), and

wherein a ghost grain does not exist in the sputtering target.

US Pat. No. 9,214,617

ELECTRONIC COMPONENT MODULE

KABUSHIKI KAISHA TOSHIBA,...

1. An electronic component module, comprising:
a circuit board including a silicon nitride substrate having a first principal surface and a second principal surface opposite
to the first principal surface, a first metal plate bonded to the first principal surface of the silicon nitride substrate
as a circuit, and a second metal plate bonded to the second principal surface of the silicon nitride substrate as a heatsink;
and

an electronic component bonded to the first metal plate via a first brazing material layer, wherein the electronic component
is a thermoelectric element of which an operation environmental temperature is 300° C. or more and 500° C. or less,

wherein the first brazing material layer is formed of a brazing material having a melting point in a range of 575° C. to 730°
C., and the melting point is higher than the operation environmental temperature of the thermoelectric element, and

wherein a ratio of a thickness of the first metal plate to a thickness of the second metal plate is 50% or more and 200% or
less.

US Pat. No. 9,109,762

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source comprising a blue light emitting LED having a light emission peak of 421 to 490 nm and a phosphor
excited by the blue light emitting LED thereby to emit a white light,
wherein the phosphor comprises four or more types of phosphors having different peak wavelengths, and at least one of the
phosphor is a blue-green phosphor having a peak wavelength of 480 to 500 nm, and the white light source satisfies a relational
equation of

?0.2?[(P(?)×V(?))/(P(?max1)×V(?max1))?(B(?)×V(?))/(B(?max2)×V(?max2))]?+0.2.

 assuming that: a light emission spectrum of the white light source is P(?); a light emission spectrum of black-body radiation
having a same color temperature as that of the white light source is B(?); a spectrum of a spectral luminous efficiency is
V(?); a wavelength at which P(?)×V(?) becomes largest is ?max1; and a wavelength at which B(?)×V(?) becomes largest is ?max2.

US Pat. No. 9,082,939

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source comprising: a light emitting diode having a light emission peak wavelength in a range of 350 nm or
more and 420 nm or less; and a phosphor layer including four or more types of phosphors and resin, wherein the white light
source satisfies a relational equation of: ?0.2?[(P(?)×V(?))/(P(?max1)×V(?max1))?(B(?)×V(?))/(B(?max2)×V(?max2))]?+0.2, assuming that: a light emission spectrum of the white light source is P(?); a light emission spectrum of black-body
radiation having a same color temperature as that of the white light source is B(?); a spectrum of a spectral luminous efficiency
is V(?); a wavelength at which P(?)×V((?) becomes largest is ?max1; and a wavelength at which B(?)×V(?) becomes largest is ?max2, and wherein an amount of chromaticity change on CIE chromaticity diagram from a time of initial lighting up of the white
light source to a time after the white light source is continuously lighted up for 6000 hours is less than 0.010.

US Pat. No. 10,040,982

RARE-EARTH REGENERATOR MATERIAL PARTICLES, AND GROUP OF RARE-EARTH REGENERATOR MATERIAL PARTICLES, REFRIGERATOR AND MEASURING APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A refrigerator for accumulating an extremely low temperature cold, comprising:a vacuum chamber;
an external cylinder disposed in the vacuum chamber, the external cylinder enclosing an inner space;
a first regenerator container for accumulating cold and a second regenerator container for accumulating cold which are arranged at the inner space inside of the external cylinder, the first regenerator container for accumulating a first cold generated at a first cooling stage, the second regenerator container for accumulating a second cold generated by further cooling the first cold at a second cooling stage,
a mesh-like member packed in the first regenerator container for accumulating cold, and
regenerator material particles packed in the second regenerator container, the regenerator material particles comprising a rare-earth metal and having an average particle size of 0.045 to 3 mm,
wherein a proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number,
a proportion of particles having a depressed portion having a length of 1/10 to ½ of a particle circumferential length of a particle on a particle surface is 30% or more by number and wherein the depressed portion has depth of 1/10 or less of a particle diameter, and the depressed portion has channel-shape or a hole-shape.

US Pat. No. 9,837,593

THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME

Kabushiki Kaisha Toshiba,...

1. A thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown
below and having an MgAgAs type crystal structure,
(Aa1Tib1)xDyX100-x-y,  compositon formula (1):

wherein 0.2?a1?0.7, 0.3?b1?0.8, a1+b1=1, 30?x?35, and 30?y?35 hold, wherein A is at least one element selected from the group
consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least
one element selected from the group consisting of Sn and Sb;

wherein an insulating coat is provided on surfaces other than an electrode joint surface of the polycrystalline material,
the insulating coat including a metallic oxide as a main component thereof in an amount of 50 mass % or more as a mass ratio
in the insulating coat, wherein the main component of the insulating coat includes at least one component selected from the
group consisting of iron oxide and chromium oxide, and wherein the insulating coat has a thermal expansion coefficient in
a range of 7×10?6 to 12×10?6/° C.;

wherein the electrode joint surface of the polycrystalline material has a metal film formed thereon; and
wherein a surface roughness Ra of the surfaces other than the electrode joint surface of the polycrystalline material is 0.2
?m or more and 5 ?m or less, and wherein an average thickness of the insulating coat is 3 ?m or more and 1 mm or less.

US Pat. No. 9,692,052

ELECTRODE MATERIAL FOR BATTERY, ELECTRODE MATERIAL PASTE FOR BATTERY, AND SOLAR CELL USING SAME, STORAGE BATTERY, AND METHOD FOR MANUFACTURING SOLAR CELL

Kabushiki Kaisha Toshiba,...

1. An electrode material for a battery, the electrode material comprising a base at least partially covered by a plurality
of coating units, wherein:
the base comprises a tungsten oxide powder or a tungsten oxide composite powder, and the base is at least partially covered
by more than one a coating unit comprising a metal oxide and optionally at least one selected from the group consisting of
silicon oxide, a metal nitride, and silicon nitride,

wherein:
a thickness of the coating unit is not less than 0.5 nm and not more than 2 nm;
the tungsten oxide powder or the tungsten oxide composite powder has a BET surface area of 5 m2/g or more; and

the metal oxide comprises at least one selected from the group consisting of Y2O3, TiO2, ZnO, ZrO2, MgO, Al2O3, CeO2, Tm2O3, Bi2O3, Mn3O4, Ta2O5, Nb2O5 and La2O3.

US Pat. No. 9,355,855

PLASMA ETCHING APPARATUS COMPONENT AND MANUFACTURING METHOD FOR THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A plasma etching apparatus component comprising:
a base material; and
an yttrium oxide coating formed by an impact sintering process in which all yttrium oxide base powder is substantially unmolten
while being sprayed onto the base material and adhered to the surface of the base material, and the yttrium oxide coating
is configured to cover a surface of the base material, wherein

the yttrium oxide coating contains at least one of particulate portions made of yttrium oxide and non-particulate portions
made of yttrium oxide, where the particulate portions are portions in which a grain boundary partitioning inner and outer
regions of a crystal grain is observed under a microscope, and the non-particulate portions are portions in which the grain
boundary is not observed under a microscope,

the yttrium oxide coating has a film thickness of 10 ?m or above and a film density of 90% or above,
when a surface of the yttrium oxide coating is observed under a microscope, in an observation field of 20 ?m×20 ?m, the particulate
portions have an area coverage ratio of 0 to 80% and the non-particulate portions have an area coverage ratio of 20 to 100%,
and

wherein when a peak value of the strongest peak of a cubic crystal is denoted by Ic and a peak value of the strongest peak
of a monoclinic crystal is denoted by Im, both the peak values being obtained by XRD analysis, the yttrium oxide coating has
a peak value ratio Im/Ic of 0.2 to 0.6.

US Pat. No. 10,231,305

WHITE LIGHT SOURCE SYSTEM

Kabushiki Kaisha Toshiba,...

1. A white light source system configured to be capable of reproducing white light of a color temperature on a locus of blackbody radiation, and white light of a correlated color temperature with a deviation from the locus of the blackbody radiation,wherein P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range in which ? is 380 nm to 780 nm, and the white light source system satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm:

where P(?) is a light emission spectrum of the white light emitted from the white light source system, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency.

US Pat. No. 9,663,407

SILICON NITRIDE WEAR RESISTANT MEMBER AND METHOD FOR PRODUCING SILICON NITRIDE SINTERED COMPACT

Kabushiki Kaisha Toshiba,...

1. A silicon nitride wear resistant member comprising a silicon nitride sintered compact containing ?-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms
of oxide, and 0.1 to 5% by mass of Hf in terms of oxide,
wherein, the silicon nitride sintered compact has rare earth-Hf—O compound crystals,
wherein, in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit
area of 30 ?m×30 ?m is 5 to 50%,

wherein a variation of five area ratios, which do not overlap each other, of the rare earth-Hf—O compound crystals between
the unit areas is 10% or less, and

wherein, when the silicon nitride sintered compact is subjected to XRD analysis, an intensity I1 of a peak at 30.0±0.5° based
on the rare earth-Hf—O compound crystals, an intensity I2 of a peak at 27.1±0.5° and an intensity I3 of a peak at 33.7±0.5°
based on the ?=Si3N4 crystals satisfy I1/[(I2+I3)/2]=0.1 to 0.2.

US Pat. No. 9,605,815

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A white light source that is used for task illumination, comprising:
a light emitting diode having a light emission peak wavelength of 350 to 490 nm; and
a phosphor that emits visible light upon excitation by a light emitted from the light emitting diode;
wherein, with respect to all local maximum values of light-emission intensity between 350 and 780 nm of a light emission spectrum
of the white light source, a ratio of a local minimum value of light-emission intensity that is closest on a long wavelength
side to the local maximum value is such that, when the local maximum value is taken as 1, the local minimum value is 0.7 or
more,

wherein a local maximum value accompanying with a local minimum value at a shorter wavelength side does not exist at a wavelength
range of 600 nm to 700 nm, and

wherein a maximum peak intensity of the light emission spectrum of the white light source is within a range of 491 to 780
nm.

US Pat. No. 9,598,584

VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYST POWDER, METHOD OF MANUFACTURING THE SAME, AND VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYTIC MATERIAL, PHOTOCATALYTIC COATING MATERIAL AND PHOTOCATALYTIC PRODUCT EACH USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A visible-light-responsive photocatalyst powder comprising:
a tungsten oxide powder having a BET specific surface area in a range of 1.5 to 820 m2/g,

wherein the tungsten oxide powder has a crystal structure in which a rhombic crystal is mixed with at least one selected from
a monoclinic crystal and a triclinic crystal,

wherein when the tungsten oxide powder is measured by X-ray diffractometry,
(1) the tungsten oxide powder has first, second, and third peaks in 22.5 to 25° of 2? range, and an intensity ratio of a peak
A to a peak D (A/D) and an intensity ratio of a peak B to the peak D (B/D) each fall within a range of 0.5 to 2.0, and an
intensity ratio of a peak C to the peak D (C/D) falls within a range of 0.63 to 2.5, where the peak A is a peak existing in
22.8 to 23.4° of 2? range, the peak B is a peak existing in 23.4 to 23.8° of 2? range, the peak C is a peak existing in 24.0
to 24.25° of 2? range, and the peak D is a peak existing in 24.25 to 24.5° of 2? range,

(2) an intensity ratio of a peak E to a peak F (E/F) falls within a range of 0.1 to 2.0, where the peak E is a peak existing
in 33.85 to 34.05° of 2? range and the peak F is a peak existing in 34.05 to 34.25° of 2? range, and

(3) an intensity ratio of a peak G to a peak H (G/H) falls within a range of 0.04 to 2.0, where the peak G is a peak existing
in 49.1 to 49.7° of 2? range and the peak H is a peak existing in 49.7 to 50.3° of 2? range,

wherein a nitrogen content in the tungsten oxide powder is 300 ppm or less, and
wherein the tungsten oxide powder is photocatalytic when irradiated with visible.
US Pat. No. 9,512,359

PHOSPHOR, METHOD FOR PRODUCING PHOSPHOR AND LIGHT EMITTING DEVICE

Kabushiki Kaisha Toshiba,...

1. A phosphor comprising a europium-activated sialon crystal having a basic composition represented by the following formula:
(Sr1-x,Eux)?Si?Al?O?N?,
wherein x is 0 wherein the phosphor belongs to an orthorhombic system, has an emission peak wavelength of 500 nm or more and 540 nm or less,
is composed of particles having a Wadell's sphericity of from 0.65 to 0.71, and emits green light by being excited by ultraviolet
light, violet light or blue light, and

wherein the phosphor has an average particle size of from 8 to 40 ?m.

US Pat. No. 10,368,408

LIGHT EMITTING DEVICE AND LED LIGHT BULB

Toshiba Materials Co., Lt...

1. A light emitting device comprising:a first white light source, including N pieces, with N being a natural number equal to or more than 2, of first white light emitting diodes electrically connected in series to one another in a forward direction, and emitting a first white light having a first color temperature;
a second white light source, including M pieces, with M being a natural number less than N, of second white light emitting diodes electrically connected in series to one another in a forward direction and a first resistance element electrically connected in series to the second white light emitting diodes and having a first resistance value, the second white light source being electrically connected in parallel to the first white light source, and emitting a second white light having a second color temperature lower than the first color temperature; and
a control circuit,
the device emitting a mixed white light of the first white light and the second white light,
wherein each of the first and second white light emitting diodes includes:
a light emitting diode element which emits light having an emission peak wavelength in a range of from 370 nm to 420 nm; and
a phosphor which emits white light by being excited by the light of the light emitting diode element, consisting of a blue phosphor, a green phosphor, and a red phosphor, each of the blue, green, and red phosphors containing at least one element selected from the group consisting of europium and cerium,
wherein a drive voltage of the first white light source is higher than a drive voltage of the second white light source, and
wherein the control circuit controls a current to be supplied to the first and second white light sources so that a color temperature of the mixed white light is higher as a total luminous flux of the mixed white light is higher.

US Pat. No. 9,746,140

LED LIGHTING DEVICE

KABUSHIKI KAISHA TOSHIBA,...

1. An LED lighting device comprising:
an LED light source which generates light in an ultraviolet light region or a visible light region;
an axisymmetric transparent member which is provided over the LED light source and which is transparent to visible light;
and

an axisymmetric light scattering member disposed in the axisymmetric transparent member apart from the LED light source,
wherein the LED light source has a light emitting surface with an area C, and has a substantially symmetrical light distribution
around a light distribution symmetrical axis which substantially intersects at right angles with the light emitting surface,

the axisymmetric transparent member has a first symmetrical axis which substantially corresponds to the light distribution
symmetrical axis of the LED light source, and the axisymmetric transparent member is symmetrical to the first symmetrical
axis,

the axisymmetric light scattering member has a second symmetrical axis which substantially corresponds to the light distribution
symmetrical axis of the LED light source, the axisymmetric light scattering member having a diameter d1 of a bottom surface and a length L1 along the second symmetrical axis is symmetrical to the second symmetrical axis, and a distance of closest approach L2 between the LED light source and the axisymmetric light scattering member, and the area C of the light emitting surface of
the LED light source satisfy the relation represented by Expression (1),


the length L1 of the axisymmetric light scattering member along the second symmetrical axis, and an absorption coefficient ? (1/mm) of the
axisymmetric light scattering member satisfy the relation of Expression (2),


the diameter d1 of the bottom surface of the axisymmetric light scattering member, the distance of closest approach L2, and a refractive index n of the axisymmetric transparent member satisfy the relation of Expression (3),

d1?2L2?{square root over (n2?1)}  Expression (3)

a section of the axisymmetric light scattering member which intersects at right angles with the second symmetrical axis is
included in a section of the axisymmetric transparent member in the former section, and

a surface in which the axisymmetric transparent member is projected on a plane including the light emitting surface of the
LED light source along the second symmetrical axis includes the light emitting surface of the LED light source.

US Pat. No. 10,132,939

SCINTILLATOR, SCINTILLATOR ARRAY, RADIATION DETECTOR, AND RADIATION EXAMINATION DEVICE

Kabushiki Kaisha Toshiba,...

1. A scintillator, comprising:a sintered body being 1 mm3 or less in volume and containing at least one rare earth oxysulfide selected from the group consisting of a gadolinium oxysulfide, an yttrium oxysulfide, and a rutetium oxysulfide;
wherein, in a composition image obtained by observing a cross-section of the sintered body under a scanning electron microscope, the sum of the number of oxide regions that contain at least one of a rare earth oxide different from the rare earth oxysulfide and an impurity metal oxide and the number of sulfide regions that contain at least one of a rare earth sulfide different from the rare earth oxysulfide and an impurity metal sulfide, which exist in a unit area of 500 ?m×500 ?m, is one or more and five or less,
wherein each of the oxide regions and the sulfide regions has a major axis of 100 ?m or less,
wherein, in the composition image, the oxide region and the sulfide region are deeper and darker in color than a rare earth oxysulfide region containing the rare earth oxysulfide,
wherein the rare earth oxide and the rare earth sulfide contain at least one element in common with rare earth elements contained in the rare earth oxysulfide,
wherein the impurity metal oxide and the impurity metal sulfide contain at least one element selected from the group consisting of an alkali metal element, an alkaline earth metal element, and iron,
wherein the sintered body has a plurality of rare earth oxysulfide crystal grains, and
wherein at least some of the oxide regions and the sulfide regions exist at a grain boundary between the grains.

US Pat. No. 9,670,369

VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYST POWDER, AND VISIBLE-LIGHT-RESPONSIVE PHOTOCATALYTIC MATERIAL, PHOTOCATALYTIC COATING MATERIAL AND PHOTOCATALYTIC PRODUCT EACH USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A visible-light-responsive photocatalyst powder, comprising:
a photocatalytic tungsten oxide powder having color whose a* is ?20 or more and ?10 or less, b* is 5 or more and 35 or less,
and L* is 80 or more when the color of the powder is expressed by an L*a*b* color system, a BET specific surface area in a
range of 55 to 250 m2/g, and an average particle size (D50) by image analysis in a range of 3.3 to 15 nm,

wherein the photocatalytic tungsten oxide powder has a crystal structure containing two or more selected from the group consisting
of a monoclinic crystal, a triclinic crystal, and a rhombic crystal,

wherein a content of nitrogen as an impurity element in the photocatalytic tungsten oxide powder is 300 ppm or less, and
wherein the photocatalytic tungsten oxide powder is photocatalytic when irradiated with visible light having a wavelength
in a range of 430 to 500 nm.

US Pat. No. 9,630,846

SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride substrate comprising silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity
of 50W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio, T2/T1, of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, an average grain diameter with respect to a long diameter of the silicon
nitride crystal grains is between 1.5 and 10 ?m, and a variation from a dielectric strength mean value when measured by a
four-terminal method in which electrodes are brought into contact with front and rear surfaces of the substrate is 20% or
less.
US Pat. No. 9,457,377

HYDROPHILIC MEMBER AND HYDROPHILIC PRODUCT USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A method for manufacturing a hydrophilic member, comprising:
mixing at least one kind of particles selected from the group consisting of tungsten oxide particles each having a crystal
structure and tungsten oxide composite particles each having a crystal structure, with an aqueous dispersion medium including
at least one selected from the group consisting of water and alcohol, to obtain a dispersion liquid containing the particles
and the aqueous dispersion medium, the crystal structure of the particles including a mixture of monoclinic crystal and triclinic
crystal of tungsten trioxide;

applying the dispersion liquid on a surface of a substrate; and
drying the dispersion liquid applied on the surface of the substrate, without firing after drying, to form a dried film containing
the particles and having a surface of which an arithmetic mean roughness Ra with a reference length of 100 ?m is from 1 nm
to 1000 nm,

wherein the particles in the dried film exist on the surface of the substrate in a state that a crystal direction is not oriented,
and

wherein the dried film exhibits hydrophilicity independently of light based on the particles in the dried film, and a contact
angle with water of the dried film stored for a month in a dark place and tested without light irradiation is 10° or less.

US Pat. No. 10,375,786

WHITE LIGHT SOURCE SYSTEM

Kabushiki Kaisha Toshiba,...

1. A white light source configured to be capable of reproducing white light of a color temperature of 2000 K to 6500 K on a locus of blackbody radiation, and white light of any one of correlated color temperatures with a deviation from the color temperature of the white light being in a range of ±0.005 duv,wherein P(?), B(?) and V(?) satisfy an equation (1) below in a wavelength range in which ? is 380 nm to 780 nm, and the white light source satisfies an expression (2) below in a wavelength range of 400 nm to 495 nm:

where P(?) is a light emission spectrum of the white light emitted from the white light source, B(?) is a light emission spectrum of blackbody radiation of a color temperature correspond to a color temperature of the white light, and V(?) is a spectrum of a spectral luminous efficiency, and
wherein an average color rendering index Ra of the white light emitted from the white light source is 97 or more, and all of color rendering indexes R1 to R8 and special color rendering indexes R9 to R15 are 90 or more.

US Pat. No. 10,368,409

LIGHT EMITTING DEVICE AND LED LIGHT BULB

Toshiba Materials Co., Lt...

1. A light emitting device comprising:a first light source configured to emit a first white light and including a plurality of first diode groups, each first diode group having N pieces of first white light emitting diodes where N is a natural number equal to or more than 2, the first white light emitting diodes of each first diode group being connected in series to one another in a forward direction, the series-connected diodes of one of the first diode groups being connected in parallel with the series-connected diodes of another one of the first diode groups, the first white light having a first color temperature; and
a second light source connected in parallel to the first light source, configured to emit a second white light, and including a plurality of second diode groups and a first resistance element, each second diode group having M pieces of second white light emitting diodes where M is a natural number less than N, the second white light emitting diodes of each second diode group being connected in series to one another in a forward direction, the series-connected diodes of one of the second diode groups being connected in parallel with the series-connected diodes of another one of the second diode groups, the first resistance element being connected in series to the series-connected diodes of each second diode group and having a first resistance value, and the second white light having a second color temperature lower than the first color temperature,
wherein each of the first white light emitting diodes and the second white light emitting diodes has a phosphor film, the film containing a silicone resin and a phosphor dispersed in the resin,
wherein the device is configured to emit a mixed white light of the first white light and the second white light,
wherein a ratio of a drive current of the first light source to a drive current of the second light source is 10 or more,
wherein a drive voltage of the first light source is higher than a drive voltage of the second light source, and
wherein a color temperature of the mixed white light is higher as a total luminous flux of the mixed white light is higher.

US Pat. No. 9,627,150

ELECTRODE MATERIAL FOR BATTERIES, ELECTRODE MATERIAL PASTE FOR BATTERIES, METHOD FOR MANUFACTURING THE ELECTRODE MATERIAL FOR BATTERIES, DYE-SENSITIZED SOLAR CELL, AND STORAGE BATTERY

Kabushiki Kaisha Toshiba,...

1. An electrode material for batteries made from tungsten oxide powder, wherein the tungsten oxide powder has a first peak
present within a wavenumber range of 268 to 274 cm?1, a second peak present within a wavenumber range of 630 to 720 cm?1, a third peak present within a wavenumber range of 800 to 810 cm?1, a fourth peak present within a wavenumber range of 130 to 140 cm?1, and a fifth peak present within a wavenumber range of 930 to 940 cm?1, when a Raman spectroscopic analysis method is performed on the electrode material, and
wherein a BET specific surface area of the electrode material is 15 m2/g or larger.

US Pat. No. 10,163,600

ROTATABLE ANODE TARGET FOR X-RAY TUBE, X-RAY TUBE, AND X-RAY INSPECTION APPARATUS

Kabushiki Kaisha Toshiba,...

1. A method of manufacturing a rotatable anode target for an X-ray tube, comprising:molding a first raw material powder containing at least one metal selected from the group consisting of molybdenum, tungsten, tantalum, niobium, and iron, or an alloy containing the at least one metal to form a first compact, sintering the first compact to form a sintered compact, and processing the sintered compact into a disc shape to form a metallic disc;
forming an X-ray irradiator on the disc;
molding a second raw material powder containing at least one metal selected from the group consisting of molybdenum, tungsten, tantalum, niobium, and iron, or an alloy containing the at least one metal of the second raw material powder to form a second compact and processing the second compact into a cylindrical shape to form a metallic cylinder; and
joining the disc and the cylinder,
wherein the disc has a plurality of first crystal grains in a first region within 2 mm from an interface between the disc and the cylinder, and the cylinder has a plurality of second crystal grains in a second region within 2 mm from the interface, and
wherein a first average aspect ratio of the first crystal grains is 1.3 or more and 1.8 or less, and a second average aspect ratio of the second crystal grains is 2.4 or more and 6.5 or less.

US Pat. No. 10,020,427

PHOSPHOR, MANUFACTURING METHOD THEREFOR, AND LIGHT-EMITTING DEVICE USING THE PHOSPHOR

KABUSHIKI KAISHA TOSHIBA,...

1. A phosphor represented by the formula (A):Ka(Si1-x-y,Tix,Mny)Fb  (A)in which a, b, x and y are numbers satisfying the conditions of1.8?a?2.2,
5.2?b?6.3,
0?x?0.3, and
0.01

US Pat. No. 9,919,292

PHOTOCATALYST BODY, PHOTOCATALYST DISPERSION, AND METHOD FOR MANUFACTURING PHOTOCATALYST BODY

Kabushiki Kaisha Toshiba,...

1. A photocatalyst dispersion comprising:
at least one fine particle selected from a tungsten oxide fine particle and a tungsten oxide composite fine particle; and
a solvent,
the solvent comprising ammonia as an ion additive,
a hydrogen ion concentration index of the photocatalyst dispersion being from pH 5.3 to pH 6.9,
the photocatalyst dispersion being capable of forming a photocatalyst body by being applied to a surface of a base body,
the photocatalyst body comprising: at least one fine particle selected from a tungsten oxide fine particle and a tungsten
oxide composite fine particle formed on the surface of the base body,

the photocatalyst body satisfying at least one condition of (1) to (3) below and a condition of (4) below:
(1) a ratio of an absorption intensity at a wave number of 3450 cm?1 to a peak intensity of an absorption at a wave number of about 1037 cm?1 being 0.9 or less when a surface of the photocatalyst body is analyzed by infrared spectroscopy;

(2) a ratio of a maximum peak intensity of an absorption in a wave number range of 1500 cm?1 to 1700 cm?1 to a peak intensity of an absorption at a wave number of about 1037 cm?1 being 0.5 or less when the surface of the photocatalyst body is analyzed by infrared spectroscopy;

(3) the photocatalyst body having no absorption peak in a wave number range of 5000 cm?1 5400 cm?1 or a ratio of a maximum peak intensity of an absorption to an absorption intensity at a wave number of 5250 cm?1 being 1.7 or less when the surface of the photocatalyst body is analyzed by near infrared spectroscopy;

(4) a ratio of a peak intensity of an absorption at a wave number of about 3690 cm?1 to a peak intensity of an absorption at a wave number of about 1037 cm?1 being 0.025 or more when the surface of the photocatalyst body is analyzed by infrared spectroscopy, and

an adsorption amount of water being suppressed in the photocatalyst body which shows a peak of the absorption corresponding
to hydroxyl groups in the infrared spectroscopy.

US Pat. No. 9,660,149

PHOSPHOR AND LED LIGHT EMITTING DEVICE USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A europium-manganese-activated alkaline earth magnesium silicate phosphor comprising a composition represented by the following
chemical formula:
(Sr2-X-Y-Z-?BaXMgYMnZEu?)SiO4
wherein x, y, z, and ? are respectively coefficients satisfying
0.1 0 0 y>z, and
0.01 and being capable of emitting luminescent components of three colors of blue, green and red.
US Pat. No. 9,570,667

THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION MODULE USING THE SAME, AND MANUFACTURING METHOD OF THE SAME

Kabushiki Kaisha Toshiba,...

1. A thermoelectric conversion material made of a polycrystalline material which is represented by a composition formula (1)
shown below and has a MgAgAs type crystal structure, the polycrystalline material comprising: MgAgAs type crystal grains having
regions of different Ti concentrations,
(AaTib)cDdXe  Composition formula (1)
wherein 0.2?a?0.7, 0.3?b?0.8, a+b=1, 0.93?c?1.08, 0.93?e?1.08, and d=1; A is at least one element selected from the group
consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least
one element selected from the group consisting of Sn and Sb.

US Pat. No. 10,024,583

RARE-EARTH REGENERATOR MATERIAL PARTICLES, AND GROUP OF RARE-EARTH REGENERATOR MATERIAL PARTICLES, REFRIGERATOR AND MEASURING APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A method of manufacturing a refrigerator for accumulating an extremely low temperature cold, comprising the steps of:providing a vacuum chamber;
providing an external cylinder so as to be disposed in the vacuum chamber, the external cylinder enclosing an inner space;
providing at least one regenerator container for accumulating cold which is arranged at the inner space inside of the external cylinder;
installing a seal ring between the external cylinder and the regenerator container;
forming an expanding chamber between the external cylinder and the regenerator container;
combining a compressor for compressing a cooling medium gas; and
packing a group of regenerator material particles in the regenerator container;
wherein the group of regenerator material particles have an average particle size of 0.045 to 3 mm,
wherein a proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, a proportion of particles having a depressed portion having a length of 1/10 to ½ of a particle circumferential length of a particle on a particle surface is 30% or more by number and wherein the depressed portion has depth of 1/10 or less of a particle diameter.

US Pat. No. 9,719,004

RARE-EARTH REGENERATOR MATERIAL PARTICLES, AND GROUP OF RARE-EARTH REGENERATOR MATERIAL PARTICLES, REFRIGERATOR AND MEASURING APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A refrigerator comprising at least one regenerator container into which a group of rare-earth regenerator material particles
is packed, and He gas as an operating medium gas,
wherein the group of rare-earth regenerator material particles packed in the regenerator container has an average particle
size of 0.045 to 3 mm, a proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90%
or more by number, and a proportion of particles having a depressed portion having a length of 1/10 to ½ of a particle circumferential length on a particle surface is 30% or more by number and the depressed portion has a
depth of 1/10 or less of a particle diameter.

US Pat. No. 10,107,457

LIGHTING APPARATUS

KABUSHIKI KAISHA TOSHIBA,...

1. A lighting apparatus comprising:a transparent globe;
a transparent optical element including a scattering portion at a first end along an axis, a light incident surface at a second end along the axis, a cylindrical side surface extending from a circumferential edge of the light incident surface along the axis, and an inclined surface continuous with the cylindrical side surface and inclined inward to surround the scattering portion;
a light source disposed to be opposed to the light incident surface of the optical element; and
a diffusion portion subjected to surface treatment to diffuse and reflect light and thermally connected with the light source,
wherein the scattering portion and the diffusion portion are disposed inside the globe.
US Pat. No. 10,081,850

TREATMENT METHOD FOR SOLUTION CONTAINING METAL IONS USING CATION ADSORBENT

Kabushiki Kaisha Toshiba,...

1. A treatment method of a solution, comprising:adding a cation adsorbent comprising tungsten oxide particles having a BET specific surface area in a range of 0.82 m2/g or more and 820 m2/g or less to a solution to be treated containing cations being recovery objects to let the cation adsorbent adsorb the cations;
precipitating the cation adsorbent adsorbing the cations to obtain precipitate; and
separating the precipitate from the solution to recover the cations,
wherein the cation is at least one ion selected from the group consisting of a cesium (Cs) ion, a strontium (Sr) ion, an iodine (I) ion, and a lithium (Li) ion.

US Pat. No. 9,954,146

PHOSPHOR, MANUFACTURING METHOD THEREOF, AND LIGHT-EMITTING DEVICE USING THE PHOSPHOR

KABUSHIKI KAISHA TOSHIBA,...

1. A red-light emitting phosphor particle, comprising potassium fluorosilicate and having a composition represented by the formula (A) at a surface thereof:KaSiFb  (A),
where 1.5?a?2.5 and 5.5?b?6.5,
wherein the red-light emitting phosphor particle is activated by manganese,
the composition as a whole is represented by the formula (B):
Kc(Si1-x,Mnx)Fd  (B),
where 1.5?c?2.5, 5.5?d?6.5 and 0 a total of an amount of manganese present on a superficial face of the red-light emitting phosphor particle and an area under the superficial face reachable by the X-ray photoelectron spectroscopy with the following conditions is not more than 0.2 mol % based on the total amount of all elements on the surface:
X-ray source: AlK? line,
power: 40 W,
measuring area: ? 200 ?m,
pass energy:
wide scan: 187.85 eV (1.60 eV/step)
narrow scan: 58.70 eV (0.125 ev/step),
charge neutralization gun: e? in use with Art, and
takeoff angle: 45°,
the amounts of oxygen and fluorine in the red-light emitting phosphor particle satisfy [oxygen content]/[(fluorine content)+(oxygen content)]<0.05, and
the red-light emitting phosphor particle has an internal quantum efficiency ?? of 60% or more, where the internal quantum efficiency if is calculated by the formula (II):

wherein
E(?) is the whole spectrum of light emitted by an excitation light source onto the red-light emitting phosphor particle in terms of number of photons,
R(?) is the spectrum of light emitted by the excitation light source and reflected by the red-light emitting phosphor particle in terms of the number of photons, and
P(?) is the emission spectrum of the red-light emitting phosphor particle in terms of the number of photons.

US Pat. No. 9,884,762

SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride substrate comprising silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity
of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio, T2/T1, of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, an average grain diameter with respect to a long diameter of the silicon
nitride crystal grains is between 1.5 and 10 ?m, and a variation from a dielectric strength mean value when measured by a
four-terminal method in which electrodes are brought into contact with front and rear surfaces of the substrate is 20% or
less;
wherein the dielectric strength mean value is 15 kV/mm or more; and
wherein a volume resistivity value when a voltage of 1000 V is applied at 25° C. is 60×1012 ?m or more.

US Pat. No. 10,167,536

TUNGSTEN ALLOY, TUNGSTEN ALLOY PART, DISCHARGE LAMP, TRANSMITTING TUBE, AND MAGNETRON

Kabushiki Kaisha Toshiba,...

1. A method for producing a tungsten alloy for a discharge lamp, a transmitting tube or a magnetron, the method comprising:mixing a HfC powder comprising primary particles having an average particle diameter of 15 ?m or less and a tungsten powder having an average particle diameter of 0.5 to 10 ?m to obtain a raw powder;
molding the raw powder to obtain a molded body;
sintering the molded body to obtain a sintered body; and
performing at least one process selected from the group consisting of forging, rolling, wiredrawing, cutting, and polishing, after the sintering step;
wherein a processing ratio [(A?B)/A]×100 of the at least one process is within a range of 30 to 90%, wherein A is a sectional area of the sintered body before the at least one process and B is a sectional area of the sintered body after the at least one process.

US Pat. No. 10,100,413

COMPONENT FOR PLASMA APPARATUS AND METHOD OF MANUFACTURING THE SAME

Kabushiki Kaisha Toshiba,...

1. A component for a plasma apparatus, the component comprising: a base material composed of a metal or ceramics; and an aluminum nitride coating formed on a surface of the base material, wherein a thickness of the aluminum nitride coating is no less than 10 ?m, a film density of the aluminum nitride coating is no less than 90%, and an area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a unit area of 20?m×20 ?m in the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%, wherein when the aluminum nitride coating is subjected to XRD analysis a ratio (lm/lc) of a most intensive peak lm of AIN to a most intensive peak lc of Al2O3 is no less than 8.

US Pat. No. 10,083,785

MAGNETIC SHEET AND NON-CONTACT POWER RECEIVING DEVICE, ELECTRONIC APPARATUS AND NON-CONTACT CHARGING SYSTEM USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A non-contact power receiving device magnetic sheet comprising a stack of magnetic thin strips and resin film parts which are stacked in a thickness direction of the non-contact power receiving device magnetic sheet;wherein the stack includes the magnetic thin strips whose number is from 6 to 25 and the resin film parts alternately stacked with the magnetic thin strips, and the magnetic thin strips are provided with cutout portions each having a width of 1 mm or less;
wherein a ratio (B/A) of a total length B of the cutout portions to a total outer peripheral length A of the magnetic thin strip is in a range of from 6.8 to 25, wherein the total outer peripheral length A is a total length of an outer peripheral area of the magnetic thin strip arranged on one of the resin film parts, and the total length B of the cutout portions is a total length of the cutout portions provided to the magnetic thin strip;
wherein each of the cutout portions is a gap shaped cut-out portion separating one at the magnetic thin strips or is a slit-shaped cutout portion formed in one at the magnetic thin strips, and each of the cutout portions has a liner shape, a curved shape, a zigzag shape, or a cross shape; and
wherein the resin film parts entirely cover peripheral surfaces of the magnetic thin strips so that the magnetic thin strips are not exposed.

US Pat. No. 10,010,869

AQUEOUS DISPERSION AND COATING MATERIAL USING THE SAME, AND PHOTOCATALYTIC FILM AND PRODUCT

Kabushiki Kaisha Toshiba,...

1. An aqueous dispersion, comprising:visible-light responsive photocatalytic composite microparticles containing tungsten oxide microparticles, zirconium oxide microparticles each having a crystal structure, and at least one metal element selected from the group consisting of nickel, titanium, manganese, iron, palladium, platinum, ruthenium, copper, silver, aluminum, and cerium; and
an aqueous dispersion medium in which the photocatalytic composite microparticles are dispersed;
wherein the photocatalytic composite microparticles contain zirconium oxide microparticles in a range of 10 mass % to 200 mass % with respect to the tungsten oxide microparticles, the metal element in a range of 0.005 mass % to 2 mass % with respect to the tungsten oxide microparticles, and the balance being tungsten oxide microparticles;
wherein a D50 particle size of the tungsten oxide microparticles and zirconium oxide microparticles, individually, in a particle size distribution of the photocatalytic composite microparticles is in a range of 50 nm to 1 pm;
wherein the zirconium oxide microparticles have rod-shaped primary particles, and a ratio of an average major axis of the rod-shaped primary particles to an average primary particle size of the tungsten oxide microparticles is in a range of 0.05 to 20; and
wherein a pH of the aqueous dispersion is in a range of 5 to 7.5.

US Pat. No. 9,988,702

COMPONENT FOR PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING COMPONENT FOR PLASMA PROCESSING APPARATUS

Kabushiki Kaisha Toshiba,...

1. A component for a plasma processing apparatus, the component comprising:a base material;
an underlayer covering a surface of the base material, and the underlayer comprising at least one selected from yttrium oxide, aluminum oxide, rare earth oxides, zirconium oxide, hafnium oxide, niobium oxide, and tantalum oxide; and
an yttrium oxide film covering a surface of the underlayer, the yttrium oxide film being formed by spraying an unmolten yttrium oxide base powder at a surface of the underlayer, and by sintering and bonding the yttrium oxide base powder thereby to deposit the sintered and bonded particles on the underlayer,
wherein the underlayer comprises a metal oxide film having a thermal conductivity of 35 W/m·K or less,
the yttrium oxide film contains at least either particulate portions made of yttrium oxide or non-particulate portions made of yttrium oxide, the particulate portions being portions where a grain boundary demarcating an outer portion of the grain boundary is observed under a microscope, and the non-particulate portions being portions where the grain boundary is not observed under a microscope,
the yttrium oxide film has a film thickness of 10 ?m or more and a film density of 96% or more,
the yttrium oxide film has a surface roughness of 3 ?m or less in terms of arithmetic average surface roughness Ra, and
the yttrium oxide film has a peak value ratio Im/Ic of 0.2 to 0.6, where a peak value of the strongest peak of a cubic crystal is denoted by Ic and a peak value of the strongest peak of a monoclinic crystal is denoted by Im, each obtained by XRD analysis, and
wherein a surface of the yttrium oxide film has an area coverage ratio of the particulate portions that is 0 to 20% in an observation range of 20 ?m×20 ?m and an area coverage ratio of the non-particulate portions that is 80 to 100% in the observation range.
US Pat. No. 10,327,445

ANTIVIRAL MATERIAL, ANTIVIRAL FILM, ANTIVIRAL FIBER, AND ANTIVIRAL PRODUCT

KABUSHIKI KAISHA TOSHIBA,...

1. An antiviral film, comprising:tungsten oxide microparticles having a mean primary particle diameter (D50) in a range of 5.5 to 75 nm, the mean primary particle diameter (D50) being a D50 diameter of integrated diameter with reference of volumes of 50 pieces or more of microparticles extracted from an image analysis of a SEM or TEM photograph of the microparticles; and
an inorganic binder for binding the tungsten oxide microparticles, a content of the inorganic binder in the antiviral film being from 5 to 95 mass %, and the inorganic binder being made only of an amorphous metal oxide,
wherein in a X-ray diffraction chart when the tungsten oxide microparticles are measured by X-ray diffractometry, an intensity ratio of a peak A to a peak D (A/D) and an intensity ratio of a peak B to the peak D (B/D) are in a range of 0.7 to 2.0, and an intensity ratio of a peak C to the peak D (C/D) is in a range of 0.5 to 2.5, wherein the peak A is a peak existing in 2? range from 22.8 to 23.4°, the peak B is a peak existing in 2? range from 23.4 to 23.8°, the peak C is a peak existing in 2? range from 24.0 to 24.25°, and the peak D is a peak existing in 26 range from 24.25 to 24.5°,
wherein the tungsten oxide microparticles contain 15% or more of microparticles having a primary particle diameter of 40 nm or less,
wherein a thickness of the antiviral film is in a range of from 2 to 400 nm, and
wherein the tungsten oxide microparticles have an inactivation effect R of 2 or more, as expressed by following:
R=log C?log A
wherein C denotes a virus titer tissue culture infective dose (TCID50) obtained after irradiating an unprocessed specimen with visible light for 24 hours, and A denotes a virus titer TCID50 obtained when the specimen is tested in the following manner:
a) said microparticles are adhered to a specimen in a range of 0.01 mg/cm 2 to 40 mg/cm2;
b) the specimen from step (a) is inoculated by a virus titer, wherein said virus is selected from a pathogenic avian influenza virus H9N2, H5N1, and a swine influenza virus;
c) said inoculated specimen from step (b) is irradiated with visible light having a wavelength of 380 nm or more and an illuminance of 6000 lx for 24 hours using a white fluorescent lamp and an ultraviolet cutting filter, and then evaluated for antibacterial activity of photocatalytic products under photoirradiation by Test method JIS-R-1702 (2006).

US Pat. No. 10,322,934

SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride substrate containing at least one element selected from rare earth element, magnesium, titanium and hafnium as a sintering aid in a total amount of 2 to 14 mass % in terms of oxide content, and comprising silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio, T2/T1, of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, an average grain diameter with respect to a long diameter of the silicon nitride crystal grains is between 1.5 and 10 ?m, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with front and rear surfaces of the substrate is 20% or less, and wherein a ratio (?v2/?v1) between a volume resistivity value ?v1 when a voltage of 1000 V is applied at room temperature (25° C.) and a volume resistivity value ?v2 when a voltage of 1000 V is applied at 250° C. is 0.20 or more.

US Pat. No. 10,160,690

SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR MODULE USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point bending strength of 500 MPa or higher and a thickness of 0.50 mm or less, with attachment layers interposed therebetween, whereina thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, at least one of the thicknesses t1 and t2 is 0.6 mm or larger, a numerical relation: 0.10?|t1?t2|?0.30 mm is satisfied, and
warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0 to 1.0 mm, and a warp amount at the silicon nitride substrate in the long-side direction is denoted by SL1, and a warp amount of the silicon nitride substrate in the short-side direction is denoted by SL2, a ratio (SL1/SL2) falls within a range from 0.5 to 5.0.

US Pat. No. 10,109,555

SILICON NITRIDE CIRCUIT BOARD AND ELECTRONIC COMPONENT MODULE USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, whereinassuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and
warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm.

US Pat. No. 10,420,183

WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM

Kabushiki Kaisha Toshiba,...

1. A white light source configured to reproduce at least a part of an emission spectrum of sunlight having a characteristic corresponding to an observation location, an observation date, and an observation time, the white light source comprising:a light source unit to emit white light having a correlated color temperature corresponding to a chromaticity point on a CIE chromaticity diagram, the chromaticity point having a deviation of ?0.005 or more to +0.005 or less with respect to a black body radiation locus, and the white light satisfying a formula: ?0.2?[(P (?)×V (?))/(P (?max1)×V (?max1))?(B (?)×V (?))/(B (?max2)×V (?max2))]?+0.2,
wherein P (?) represents an emission spectrum of the white light, B (?) represents a spectrum of black body radiation having a color temperature corresponding to the correlated color temperature of the white light, V (?) represents a spectrum of spectral luminous efficiency, ?max1 represents a wavelength in which P (?)×V (?) is a maximum value, and ?max2 represents a wavelength in which B (?)× V (?) is a maximum value.

US Pat. No. 10,385,248

RARE-EARTH REGENERATOR MATERIAL PARTICLES, AND GROUP OF RARE-EARTH REGENERATOR MATERIAL PARTICLES, REFRIGERATOR AND MEASURING APPARATUS USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A Gifford MacMahon type (GM) refrigerator for accumulating an extremely low temperature cold, comprising:a vacuum chamber;
an external cylinder provided so as to be disposed in the vacuum chamber, the external cylinder enclosing an inner space;
at least one regenerator container for accumulating cold which is arranged at the inner space inside the external cylinder;
a seal ring installed between the external cylinder and the regenerator container;
an expanding chamber formed between the external cylinder and the regenerator container;
a compressor for compressing a cooling medium gas; and
a group of regenerator material particles packed in the regenerator container;
wherein the group of regenerator material particles have an average particle size of 0.045 to 3 mm,
wherein a proportion of particles having a ratio of a long diameter to a short diameter of 2 or less is 90% or more by number, a proportion of particles having a depressed portion having a length of 1/10 to ½ of a particle circumferential length of a particle on a particle surface is 30% or more by number and wherein the depressed portion has a depth of 1/10 or less of a particle diameter.

US Pat. No. 10,378,709

ILLUMINATION SYSTEM FOR REPRODUCING THE COLOR TEMPERATURE RANGE OF SOLAR LIGHT FOR ILLUMINATING EXHIBITS

Kabushiki Kaisha Toshiba,...

1. An illumination system comprising a plurality of white light sources that satisfies a relationship of?0.2[(2(?)×V(?))/(P(? max 1)×V(? max 1))?(B(?)×V(?))/(B(? max 2)×V(? max 2))]<+0.2where P(?) is an emission spectrum of a white light source having a specific color temperature on a black-body locus, B(?) is an emission spectrum of black body radiation having a corresponding color temperature, V(?) is a spectrum of spectral luminous efficiency, ? max 1 is a wavelength at which 2(?)× V(?) becomes maximum, and ? max 2 is a wavelength at which B(?)× V(?) becomes maximum, wherein the respective white light sources are the white light sources that have different color temperatures, and light from the respective white light sources is irradiated from different directions to a target.

US Pat. No. 10,366,938

SILICON NITRIDE CIRCUIT BOARD AND ELECTRONIC COMPONENT MODULE USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A silicon nitride circuit board in which metal plates are attached on front and rear sides of a silicon nitride substrate having a three-point flexural strength of 500 MPa or higher, whereinassuming that a thickness of the metal plate on the front side is denoted by t1, and a thickness of the metal plate on the rear side is denoted by t2, a numerical relation: |t1?t2|?0.30 mm is satisfied, and a warp is formed in the silicon nitride substrate so that the silicon nitride substrate is convex toward the metal plate on one of the front side or the rear side; and
warp amounts of the silicon nitride substrate in a long-side direction and a short-side direction both fall within a range from 0.01 to 1.0 mm;
wherein assuming that a warp amount of the silicon nitride substrate in the long-side direction is denoted by SL1, and a warp amount of the silicon nitride substrate in the short-side direction is denoted by SL2, a ratio (SL1/SL2) falls within a range from 1.2 to 20.0; and
wherein assuming that a length of the silicon nitride substrate in a diagonal line direction is denoted by L3, and a warp amount in the diagonal line direction is denoted by SL3, SL3 falls within a range of 0.1?SL3?1.5 mm.

US Pat. No. 10,335,771

AQUEOUS DISPERSION AND COATING MATERIAL USING THE SAME, AND PHOTOCATALYTIC FILM AND PRODUCT

Kabushiki Kaisha Toshiba,...

1. A method for manufacturing a photocatalytic film, comprising:preparing an aqueous dispersion including a visible-light responsive photocatalytic composite microparticles containing tungsten oxide microparticles and zirconium oxide microparticles, and an aqueous dispersion medium in which the photocatalytic composite microparticles are dispersed; and
applying the aqueous dispersion on a base material to form a photocatalytic film having a film thickness in a range of 2 to 1000 nm,
wherein the photocatalytic composite microparticles are dispersed in the aqueous dispersion medium in a range of 0.001 to 50 mass %;
wherein a D50 particle size in a particle size distribution of the photocatalytic composite microparticles is in a range of 20 nm to 10 ?m;
wherein the zirconium oxide microparticles have rod-shaped primary particles, and a ratio of an average major axis of the rod-shaped primary particles to an average primary particle size of the tungsten oxide microparticles is in a range of 0.05 to 20; and
wherein a pH of the aqueous dispersion is in a range of 1 to 9.
US Pat. No. 10,308,560

HIGH THERMAL CONDUCTIVE SILICON NITRIDE SINTERED BODY, AND SILICON NITRIDE SUBSTRATE AND SILICON NITRIDE CIRCUIT BOARD AND SEMICONDUCTOR APPARATUS USING THE SAME

KABUSHIKI KAISHA TOSHIBA,...

1. A high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m·K or more and a three-point bending strength of 600 MPa or more,wherein highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I29.3°, I29.7°, I27.0°, and I36.1°, respectively, the highest peak intensities being detected by XRD analysis for an arbitrary cross section of the silicon nitride sintered body, whereby a peak ratio (I29.3°)/(I27.0°+I36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I29.7°)/(I27.0°+I36.1°) satisfies a range of 0.02 to 0.16, and
the I29.3° and I29.7° correspond to peaks depending on a rare earth element-hafnium-oxygen compound crystal.

US Pat. No. 10,281,591

CERAMIC SCINTILLATOR ARRAY, X-RAY DETECTOR, AND X-RAY INSPECTION DEVICE

Kabushiki Kaisha Toshiba,...

1. A ceramic scintillator array comprising:a plurality of scintillator segments each composed of a sintered compact of a rare earth oxysulfide phosphor;
a first reflective layer interposed between the scintillator segments adjacent to each other in a manner to integrate the plurality of scintillator segments, the first reflective layer comprising a first transparent resin and first reflective particles dispersed in the first transparent resin; and
a second reflective layer arranged on a side of surfaces on which an X-ray is incident of the plurality of scintillator segments, the second reflective layer comprising a second transparent resin and second reflective particles dispersed in the second transparent resin;
wherein a glass transition point of the first transparent resin is 60° C. or higher, and a molecular structure of the first transparent resin has a cyclo structure including no double bond,
wherein a glass transition point of the second transparent resin is 30° C. or lower, and a molecular structure of the second transparent resin has a double bond,
wherein the first reflective layer contains, by mass ratio, 15% or more and 60% or less of the first transparent resin and 40% or more and 85% or less of the first reflective particles, and
wherein the second reflective layer contains, by mass ratio, 15% or more and 60% or less of the second transparent resin and 40% or more and 85% or less of the second reflective particles.

US Pat. No. 10,283,776

ELECTRODE MATERIAL, AND ELECTRODE LAYER, BATTERY, AND ELECTROCHROMIC DEVICE USING THE ELECTRODE MATERIAL

Kabushiki Kaisha Toshiba,...

1. An electrode material comprising at least one metal compound powder selected from the group consisting of tungsten oxide, molybdenum oxide, MoxWyOz, where 0

US Pat. No. 10,274,185

LIGHTING DEVICE

Kabushiki Kaisha Toshiba,...

1. A lighting device comprising:a hollow globe having an opening at an end thereof;
a light source housed in the globe and including at least an LED;
a pillar portion housed in the globe and supporting the light source;
a cap connector directly connected to the pillar portion, or indirectly connected to the pillar portion via another member; and
a cap attached to the cap connector and electrically connected to the light source,
wherein a thermally conductive layer is provided between an inner surface of the globe and a lateral surface of the pillar portion, and the thermally conductive layer comprises a gas positioned between the inner surface of the globe and the lateral surface of the pillar portion; and
relationships given by the following formulas are satisfied:

where d is a thickness of the thermally conductive layer, l is a length of a portion of the pillar portion which contacts the thermally conductive layer, ? is a volume expansion coefficient of the gas, Tp is the lateral surface temperature of the pillar portion, Tg is an inner surface temperature of a region of the globe which contacts the thermally conductive layer, ? is a dynamic viscosity coefficient of the gas, and Grl is a Grashof number.

US Pat. No. 10,395,879

TUNGSTEN ALLOY PART, AND DISCHARGE LAMP, TRANSMITTING TUBE, AND MAGNETRON USING THE SAME

Kabushiki Kaisha Toshiba,...

1. A tungsten alloy part used for a discharge lamp part, a transmitting tube part, or a magnetron part, the tungsten alloy part comprising tungsten and 0.1 to 5 wt % Zr in terms of ZrC,wherein contents of Zr, ZrC and C are expressed as ZrCx where 0<×<1, and
wherein the tungsten alloy part satisfies C1

US Pat. No. 10,416,319

CERAMIC SCINTILLATOR ARRAY, METHOD FOR MANUFACTURING SAME, RADIATION DETECTOR AND RADIATION INSPECTION DEVICE

Kabushiki Kaisha Toshiba,...

1. A ceramic scintillator array comprising:a plurality of scintillator segments each composed of a sintered compact of a rare earth oxysulfide phosphor; and
a reflective layer interposed between the scintillator segments adjacent to each other to integrate the plurality of scintillator segments, the reflective layer containing a transparent epoxy resin and reflective particles dispersed in the transparent epoxy resin, wherein the transparent epoxy resin is a two-component epoxy resin curable at room temperature;
wherein the reflective particles contain titanium oxide and at least one inorganic substance selected from the group consisting of alumina, zirconia, and silica; and
wherein a glass transition point of the transparent epoxy resin is 60° C. or higher, and a thermal expansion coefficient of the transparent epoxy resin at a temperature higher than the glass transition point is 2.5×10?5/° C. or less.

US Pat. No. 10,473,274

WHITE LIGHT SOURCE SYSTEM

Kabushiki Kaisha Toshiba,...

1. A white light source system comprising white light sources each having a general color rendering index of not less than 97,wherein an absolute value of a difference between (P(?)×V(?))/(P(?max1)×V(?max1)) and (B(?)×V(?))/(B(?max2)×V(?max2)) for each of the white light sources satisfies a relational expression represented by
|((P(?)×V(?))/(P(?max1)×V(?max1))?(B(?)×V(?))/(B(?max2)×V(?max2))|?0.15
where the P(?) is an emission spectrum of the each white light source, the B(?) is an emission spectrum of black-body radiation having a color temperature corresponding to a color temperature of the each white light source, the V(?) is a spectrum of a spectral luminous efficiency, the ?max1 is a wavelength that maximizes P(?)×V(?), and the ?max2 is a wavelength that maximizes B(?)×V(?),
wherein the white light source system has a light emission characteristic of white light emitted by the system is continuously changed along with an elapse of time by changing a mixing ratio of light beams from the white light sources.

US Pat. No. 10,473,597

NEUTRON GRID, NEUTRON GRID STACK, NEUTRON GRID DEVICE, AND METHOD OF MANUFACTURING NEUTRON GRID

Kabushiki Kaisha Toshiba,...

1. A neutron grid, comprising:a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and
a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions, wherein
the spacers contain W and at least one selected from the group consisting of Si, Al2O3, AlN, SiC, and Y2O3,
the absorbers contain Ta, or Ta and at least one selected from the group consisting of B, Gd, Sm, Li, Cd, Gd2O3, and 10B4C,
the covers contain Al, or Al and at least one selected from the group consisting of W, Pb and Bi, and
a thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10?6/° C. or less, or Young's modulus of one of the spacers is 100 GPa or more.