US Pat. No. 9,288,890

METHOD AND APPARATUS FOR PROVIDING AN ANISOTROPIC AND MONO-ENERGETIC NEUTRAL BEAM BY NON-AMBIPOLAR ELECTRON PLASMA

Tokyo Electron Limited, ...

19. An apparatus for treating a substrate, the apparatus comprising:
a first plasma chamber for forming a first plasma at a first plasma potential;
a second plasma chamber for forming a second plasma at a second potential greater than the first plasma potential, wherein
the second plasma is formed and maintained by using electron flux from the first plasma and being coupled to a DC accelerator;

a separation member disposed between the first plasma chamber and the second plasma chamber, wherein the separation member
is configured with an array or openings sufficient to allow the electron flux from the first plasma chamber to enter the second
plasma chamber; and

a holder disposed adjacent to the second plasma chamber and apart from the separation member, wherein the holder is configured
to hold a neutralizer grid defining a plurality of channels oriented perpendicular to a surface of the substrate, a surface
material of the plurality of channels being a material that temporarily holds electrons from the electron flux on surfaces
of the plurality of channels such that positive ions traveling through the neutralizer grid receive electrons from the surfaces
of the plurality of channels and continue traveling toward the substrate as a neutral particle,

wherein the neutralizer grid is configured to cause a substantially anisotropic beam of neutral particles traveling from the
neutralizer grid via the electron flux.

US Pat. No. 9,281,251

SUBSTRATE BACKSIDE TEXTURING

Tokyo Electron Limited, ...

1. A method for determining backside texturing of a semiconductor substrate that is processed on a photolithography tool,
comprising:
determining one or more contact areas on the photolithography tool for the semiconductor substrate;
determining a backside surface texturing for the semiconductor substrate that is based, at least in part, on:
a frequency of backside features of the semiconductor substrate at one or more portions of the semiconductor substrate,
an amplitude of the backside features at the one or more portions of the semiconductor substrate, or
a size of the one or more contact areas; and
processing the semiconductor substrate to obtain a target backside surface texturing that reduces the coefficient of friction
between the substrate and the one or more contact areas, the target backside surface texturing comprising backside features
occurring at a period that is ? to 1/10 of a size of the one or more contact areas.

US Pat. No. 9,293,543

FILM FORMING METHOD AND FILM FORMING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A method of forming a gate insulating film for use in a MOSFET for a power device, the method comprising:
forming an AlN film;
forming an AlO film; and
repeating the forming the AlN film and the forming the AlO film, thereby forming an AlON film having a laminated structure
in which AlO films and AlN films are alternately laminated.

US Pat. No. 9,245,741

METHOD FOR FORMING NITRIDE FILM USING PLASMA PROCESS

TOKYO ELECTRON LIMITED, ...

1. A method of forming a nitride film on an object to be processed, the method comprising:
exposing the object to be processed to dichlorosilane which is a precursor gas so that a dichlorosilane based first reactant
is chemisorbed onto the object to be processed;

exposing the object to be processed to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after the
exposing of the object to be processed to the dichlorosilane;

exciting each of the hydrogen gas and the ammonia gas thereby generating a hydrogen radical and an ammonia radical;
removing a chlorine in the first reactant through a hydrogen substitution reaction of the first reactant and the hydrogen
radical thereby generating a second reactant; and

performing a nitriding reaction of the second reactant and the ammonia radical thereby generating the nitride film.

US Pat. No. 9,293,320

LIQUID TREATMENT APPARATUS AND METHOD AND NON-TRANSITORY STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A liquid treatment method comprising:
supplying a first organic solvent to a substrate with the substrate being held horizontally by a substrate holder;
thereafter supplying a second organic solvent to the substrate held by the substrate holder, the second solvent passed through
a filter at least one more time than the first solvent,

wherein the first organic solvent and the second organic solvent have the same composition and are different from one another
only in a number of times filtered.

US Pat. No. 9,246,098

GE—SB—TE FILM FORMING METHOD, GE—TE FILM FORMING METHOD, AND SB—TE FILM FORMING METHOD

TOKYO ELECTRON LIMITED, ...

1. A Ge—Sb—Te film forming method comprising:
a Sb source material introducing process of introducing a Sb source material represented by (R2O)3Sb;

a first purging process of purging with an inert gas after the Sb source material introducing process;
a Te source material introducing process of introducing a Te source material represented by (R3R4R5Si)2Te or (R3R4R5Si)2TeR6;

a second purging process of purging with the inert gas after the Te source material introducing process;
a Ge source material introducing process of introducing a Ge source material represented by (R1O)4Ge or (R1O)nGeH4-n; and

a third purging process of purging with the inert gas after the Ge source material introducing process,
wherein the R2 denotes an aromatic group or an alkyl group that has a straight chain structure, a branched chain structure, or a cyclic structure,
and has a carbon number ranging from 1 to 10,

each of R3, R4, R5 and R6 denotes a hydrogen, an aromatic group or an alkyl group that has a straight chain structure, a branched chain structure or
a cyclic structure, and has a carbon number ranging from 1 to 10, and has a double bond,

the R1 denotes an aromatic group or an alkyl group that has a straight chain structure, a branched chain structure, or a cyclic structure,
and has a carbon number ranging from 1 to 10, and n denotes a natural number ranging from 1 to 3,

an additive gas containing at least one of ammonia, methylamine, dimethylamine, hydrazine, monomethylhydrazine, dimethylhydrazine
and pyridine is introduced in at least one of the Sb, Te and Ge source material introducing processes and the first to third
purging processes, and

a Sb concentration in the Ge—Sb—Te film is controlled by adjusting a partial pressure of the additive gas.

US Pat. No. 9,263,239

ETCHING METHOD OF MULTILAYERED FILM

TOKYO ELECTRON LIMITED, ...

1. An etching method of etching a multilayered film including a first film and a second film that have different permittivities
and are alternately stacked on top of each other, the etching method comprising:
preparing, within a processing vessel of a plasma processing apparatus, a processing target object having the multilayered
film and a mask provided on the multilayered film; and

etching the multilayered film by exciting a processing gas containing a hydrogen gas, a hydrofluorocarbon gas, a fluorine-containing
gas, a hydrocarbon gas, a boron trichloride gas and a nitrogen gas within the processing vessel.

US Pat. No. 9,256,221

INFORMATION PROCESSING APPARATUS, PROCESSING SYSTEM, PROCESSING METHOD, AND PROGRAM

TOKYO ELECTRON LIMITED, ...

1. An information processing apparatus for processing information on a semiconductor treatment apparatus, comprising:
an abnormality information display device configured to display information on an abnormality when the abnormality occurs
in a semiconductor treatment apparatus;

a countermeasure information receiving device configured to receive countermeasure information on a countermeasure to the
abnormality;

a countermeasure information storing device configured to store the countermeasure information such that the countermeasure
information is matched with abnormality identification information for identifying the abnormality;

an output device configured to output the countermeasure information and the abnormality identification information stored
in the countermeasure information storing device via a communication device to the outside;

a countermeasure item display device configured to display a plurality of countermeasure item candidates when the abnormality
occurs;

a countermeasure item storing device configured to store a countermeasure item selected from the plurality of countermeasure
item candidates displayed on the countermeasure item display device such that the countermeasure item is matched with the
abnormality identification information;

a countermeasure item transmitting device configured to transmit the countermeasure item and the abnormality identification
information stored in the countermeasure item storing device via the communication device to the outside;

a countermeasure item statistic receiving device configured to receive a statistic regarding the countermeasure item corresponding
to the abnormality identification information transmitted from the outside; and

a countermeasure item statistic display device configured to display the statistic regarding the countermeasure item for the
abnormality identification information received by the countermeasure item statistic receiving device when the abnormality
occurs.

US Pat. No. 9,245,737

LIQUID TREATMENT APPARATUS AND LIQUID TREATMENT METHOD

Tokyo Electron Limited, ...

1. A liquid treatment apparatus comprising:
a substrate holder configured to horizontally hold a substrate;
a top plate configured to be rotatable and to cover the substrate held by the substrate holder from above so as to define
a treatment space;

a chemical liquid nozzle configured to supply a chemical liquid to the substrate in the treatment space;
a replacement nozzle configured to supply an atmosphere replacement gas into the treatment space; and
a replacement nozzle support arm configured to support the replacement nozzle and configured to be horizontally moved between
an advanced position at which the replacement nozzle support arm is advanced into the treatment space and a retracted position
at which the replacement nozzle support arm is retracted outside from the treatment space;

wherein the replacement nozzle is configured to discharge, above the substrate, the atmosphere replacement gas upward.

US Pat. No. 9,236,272

ETCHING APPARATUS AND ETCHING METHOD

TOKYO ELECTRON LIMITED, ...

1. An etching method, comprising:
accommodating a substrate to be processed having an etching target film into a chamber;
supplying an etching gas into the chamber to etch the etching target film; and
discharging, from the chamber, a gas produced by a reaction when the etching target film is etched, with a gas cluster generated
by spraying a cluster gas into the chamber,

wherein the sprayed cluster gas undergoes adiabatic expansion and then gas clumping by van der Waals force to form the gas
cluster.

US Pat. No. 9,263,283

ETCHING METHOD AND APPARATUS

TOKYO ELECTRON LIMITED, ...

1. An etching method comprising:
loading a substrate into a processing chamber, the substrate including a silicon nitride film, polycrystalline silicon patterns
formed on the silicon nitride film and a silicon oxide film formed on a surface of the silicon nitride film and top surfaces
and side surfaces of the polycrystalline silicon patterns;

introducing a processing gas containing (i) a plasma excitation gas, (ii) a carbon and fluorine containing gas consisting
of a CHF3 gas, and (iii) an oxygen gas into the processing chamber, wherein a flow rate ratio of the carbon and fluorine containing
gas to the plasma excitation gas is 1/15 or higher and a flow rate ratio of the oxygen gas to the carbon and fluorine containing
gas is 1/10 or less; and

etching the silicon oxide film formed on the top surfaces of the polycrystalline silicon patterns and the surface of the silicon
nitride film in the processing chamber by using a plasma of the processing gas in the processing chamber while depositing
a protective film containing carbon and fluorine obtained by dissociation of the carbon and fluorine containing gas on the
surface of the silicon nitride film exposed during etching the silicon oxide film, wherein the silicon nitride film is etched
by said etching 4 nm or less in depth,

wherein the plasma is generated by microwaves supplied by using a radial line slot antenna.

US Pat. No. 9,236,230

PLASMA PROCESSING APPARATUS AND GAS SUPPLY METHOD THEREFOR

TOKYO ELECTRON LIMITED, ...

6. A plasma processing apparatus that supplies a gas into an evacuable processing chamber to generate plasma and that performs
a plasma process on a substrate by the plasma, the plasma processing apparatus comprising:
a gas supply system, having multiple processing gas supply sources and multiple gas supply paths respectively connected to
the processing gas supply sources, for supplying a plurality of processing gases into the processing chamber via the gas supply
paths;

a flow rate controller provided at each of the gas supply paths and configured to control a flow rate of a processing gas
flowing in the gas supply path by adjusting an opening degree of a flow rate control valve according to an instruction flow
rate;

an opening/closing valve provided at a downstream side of each flow rate controller; and
a controller configured to set a flow rate of the flow rate controller,
wherein when supplying at least two kinds of processing gases into the processing chamber while alternately switching the
at least two kinds of processing gases during the plasma process on the substrate, the controller alternately turns on and
off the supply of each processing gas by alternately setting the instruction flow rate of the flow rate controller to be a
predetermined flow rate and a zero flow rate while the opening/closing valve provided at the downstream side of the flow rate
controller is open,

wherein when supplying the processing gases into the processing chamber while alternately switching the processing gases,
it is determined whether a supply duration time before switching each processing gas is equal to or smaller than a threshold
value,

if it is determined that the supply duration time is equal to or smaller than the threshold value, the supply of the processing
gas is turned on and off by alternately setting instruction flow rate of the flow rate controller to be the predetermined
flow rate and the zero flow rate while the downstream opening/closing valve is open, and

if it is determined that the supply duration time is larger than the threshold value, the supply of the processing gas is
turned on and off by opening and closing the downstream opening/closing valve.

US Pat. No. 9,301,383

LOW ELECTRON TEMPERATURE, EDGE-DENSITY ENHANCED, SURFACE WAVE PLASMA (SWP) PROCESSING METHOD AND APPARATUS

Tokyo Electron Limited, ...

1. A method of enhancing uniformity of a plasma at a wafer surface without increasing electron temperature of the plasma in
the vacuum processing of a substrate, comprising:
supporting a substrate for processing at one end of a vacuum processing chamber with a surface thereof facing a processing
space in the vacuum processing chamber;

coupling energy into the processing space within the vacuum processing chamber from a first plasma source at an end of the
vacuum processing chamber opposite the substrate and having a tendency to produce a center-dense plasma over the substrate
surface; and

inductively coupling, from an antenna of a second plasma source with the antenna extending around the perimeter of the vacuum
processing chamber and positioned in a plane extending through the processing space over the surface of the substrate, RF
energy at a low power level of less than 100 watts where the substrate has a diameter of 300 millimeters or less and of less
than 300 watts where the substrate has a diameter of more than 300 millimeters.

US Pat. No. 9,261,553

PROBE APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A probe apparatus of inspecting an electrical characteristic of a power device that is formed on a substrate to be inspected
and has electrodes on front and rear surfaces of the substrate, the probe apparatus comprising:
a movable chuck top configured to mount and support the substrate thereon;
a probe card that is provided above the chuck top to face the chuck top and is configured to support a probe needle having
a leading end to be brought into contact with a front surface electrode of the power device exposed at the front surface of
the substrate supported on the chuck top;

a first measurement line, having the probe needle, configured to electrically connect the front surface electrode of the power
device to a corresponding first terminal of a tester;

a mounting surface conductor that serves as a mounting surface on the chuck top and is configured to be brought into contact
with a rear surface electrode of the power device exposed at the rear surface of the substrate;

a second measurement line, having the mounting surface conductor, configured to electrically connect the rear surface electrode
of the power device to a corresponding second terminal of the tester; and

an attracting device, having many vertical fine holes which are densely distributed in an attraction region set on the mounting
surface and each of which is vertically extended from a surface of the mounting surface conductor to an inner portion thereof,
configured to apply a vacuum attracting force to the rear surface of the substrate through the vertical fine holes,

wherein, in the attraction region, the vertical fine hole satisfies a condition of ? vertical fine hole and p denotes a pitch therebetween.

US Pat. No. 9,252,000

MICROWAVE WAVEGUIDE APPARATUS, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

NATIONAL UNIVERSITY CORPO...

1. A microwave waveguide apparatus for generating plasma, comprising:
a waveguide including an introduction waveguide and an annular waveguide, the annular waveguide having a first end portion
and a second end portion and configured to propagate a microwave from an input end of the waveguide such that the microwave
propagates from the first end portion to the second end portion in the annular waveguide;

a circulator device having a first port, a second port coupled to the first end portion, and a third port coupled to the second
end portion, the circulator device being configured such that the microwave is received at the first port, propagates from
the second port to the first end portion of the annular waveguide, is received at the third port from the second end portion
and is returned toward the input end; and

a matching device interposed between the input end and the circulator device and configured to reflect a portion of the microwave
received at the third port of the circulator device and returned toward the input end to the first port of the circulator
device,

wherein the introduction waveguide is connected to the input end and the first port of the circulator device, and the annular
waveguide has the first end portion coupled to the second port of the circulator device and the second end portion coupled
to the third port of the circulator device and has a slot-hole portion extending along a propagation direction of the microwave
propagating in the annular waveguide.

US Pat. No. 9,095,039

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOHOKU UNIVERSITY, Senda...

1. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and
a plasma space in which plasma is generated, the plasma space being formed above the mounting table;

a transmission path comprising a first coaxial waveguide through which a high frequency power for exciting plasma is supplied
into the decompression chamber;

a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space;
a matching device which is connected to a high frequency power supply;
an adjusting unit configured to adjust an effective height of the waveguide path and adjust wavelength of a high frequency
power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening;

a reflectometer connected to the first coaxial waveguide and configured to measure a reflection or an impedance of a high
frequency power propagating in the first coaxial waveguide; and

a controller configured to adjust a wavelength of the high frequency power propagating in the waveguide path in the lengthwise
direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer,

wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited.

US Pat. No. 9,234,275

METHOD AND APPARATUS OF FORMING METAL COMPOUND FILM, AND ELECTRONIC PRODUCT

TOKYO ELECTRON LIMITED, ...

1. A method of forming a film of metal compound of first and second materials on an object to be processed, one of the first
and second materials being metal, comprising:
supplying a raw material gas containing the first material to the object such that the first material is adsorbed onto the
object;

supplying a raw material gas containing the second material to the object with the first material adsorbed thereon such that
the second material is adsorbed onto the first material; and

subsequently supplying a third material different from the first and second materials onto the first and second materials
adsorbed onto the object such that the first to third materials are chemically combined with one another,

wherein the supplying the raw material gas containing the first material is repeated at least two times based on a target
composition ratio of the first material and the second material before supplying the raw material gas containing the second
material;

wherein the supplying the raw material gas containing the second material is performed at least one-time based on the target
composition ratio of the first material and the second material;

wherein the supplying the third material is performed at least one-time;
wherein the repetition number of the supplying the raw material containing the first material and the performance number of
the supplying the raw material gas containing the second material are differently set based on the target composition ratio
of the first material and the second material;

wherein the first material is Hf and the second material is Si; and
wherein the first material gas and the second material gas are not supplied as a mixture of them.

US Pat. No. 9,305,814

METHOD OF INSPECTING SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM STORING INSPECTION PROGRAM FOR EXECUTING THE METHOD

TOKYO ELECTRON LIMITED, ...

1. A method of controlling substrate carrying-in performed in a substrate processing apparatus including at least one substrate
processing chamber for processing product substrates, and a substrate conveying chamber that is connected to the substrate
processing chamber, for conveying the product substrates therethrough, the substrate conveying chamber having at least one
inlet port to which are connected containers containing the product substrates and through which the product substrates are
supplied from the containers to the substrate processing chamber, comprising:
a substrate carrying-in inhibiting step of inhibiting, in response to an external instruction, which is issued when abnormal
noise is generated from the substrate processing chamber, subsequent product substrates from being conveyed into the substrate
processing chamber from which the abnormal noise is generated after the external instruction;

an inspection substrate carrying-in permitting step of permitting an inspection substrate to be conveyed from a predetermined
one of the containers which is connected to the inlet port into the substrate processing chamber from which the abnormal noise
is generated, in response to a notification that the predetermined container contains the inspection substrate; and

a container removing step of removing the container from the inlet port after processing all the product substrates contained
in the container, the container being a removable element distinct from the substrate processing apparatus,

wherein said substrate carrying-in inhibiting step further comprises
continuing processing all the product substrates contained in the container, which is connected to the inlet port and which
previously contained a product substrate being processed, before the external instruction is received, and

continuing processing all the product substrates contained in the container without interrupting processing the product substrates
by the substrate processing chamber from which the abnormal noise is generated and then inhibiting conveying the subsequent
product substrates into the substrate processing chamber from which the abnormal noise is generated only after completion
of the processing of all the product substrates contained in the container even after the external instruction is received,

wherein the continued processing of all the product substrates contained in the container is performed using the substrate
processing chamber, in which the abnormal noise is generated, even after the external instruction for inhibiting is received.

US Pat. No. 9,275,335

AUTONOMOUS BIOLOGICALLY BASED LEARNING TOOL

Tokyo Electron Limited, ...

1. A method comprising:
establishing, by system including a processor, a goal for an autonomous biologically based learning tool associated with a
tool system;

receiving, by the system, data associated with the goal;
generating, by the system, knowledge from the received data, wherein the knowledge comprises a set of concepts and each concept
comprises a suitability metric that indicates a suitability of the concept to the goal and an inertia metric that indicates
a complexity to employ the concept to the goal;

storing, by the system, the knowledge;
utilizing, by the system, the knowledge to determine at least one of the goal is accomplished or the goal is to be changed;
and

in response to determining that the goal is to be changed, changing, by the system, the goal according to a context extracted
from the knowledge.

US Pat. No. 9,230,799

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

TOHOKU UNIVERSITY, Senda...

1. A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer, the
method comprising:
forming a first nitride layer on a substrate;
forming a second nitride layer on the first nitride layer;
forming a field oxide layer on the second nitride layer;
forming a gate insulating film in which an Al2O3 film is formed to penetrate the field oxide layer, the first nitride layer, and the second nitride layer, the Al2O3 film is subject to radical oxidation, and

then a SiO2 film is formed by using microwave plasma, the SiO2 film penetrating the field oxide layer and the second nitride layer only, and the SiO2 film located between the Al2O3 film and a gate electrode, wherein

the gate electrode is at least partially located in an opening of the SiO2 film of the gate insulating film, and

in the forming the gate insulating film, the microwave plasma is generated by using microwaves at a frequency of 2.45 GHz
by using a radial line slot antenna.

US Pat. No. 9,305,819

SUBSTRATE PROCESSING SYSTEM

TOKYO ELECTRON LIMITED, ...

1. A substrate processing system comprising:
a first transfer apparatus configured to unload substrates from a cassette that accommodates the substrates and configured
to transfer the unloaded substrates in a transfer direction;

at least one first accommodating unit configured to accommodate the substrates transferred by the first transfer apparatus;
multiple first substrate processing units, which are divided into at least two groups and arranged in a height direction,
configured to perform a preset process to the respective substrates;

multiple second accommodating units, which each respectively corresponds to one of the groups and are arranged to be parallel
with the at least one first accommodating unit in the height direction, configured to accommodate the substrates;

multiple second transfer apparatuses, each respectively corresponding to one of the groups, configured to unload the substrates
from the second accommodating units corresponding to the same groups and transfer the substrates into the first substrate
processing units belonging to the same groups;

multiple second substrate processing units, which each respectively corresponds to one of the groups and are arranged to be
disposed above and below the at least one first accommodating unit and the second accommodating units in the height direction,
configured to perform a predetermined process to the respective substrates; and

at least one delivery apparatus configured to deliver the substrates between the at least one first accommodating unit and
the second accommodating units and configured to transfer the substrates between the at least one first accommodating unit
and the second substrate processing units,

wherein the at least one first accommodating unit corresponding to two adjacent groups is arranged at a middle height position
between the two groups, and the second accommodating units respectively corresponding to the groups are arranged above and
below the at least one first accommodating unit, respectively,

the at least one delivery apparatus is plural in number, and the delivery apparatuses respectively correspond to the groups,
and

the delivery apparatuses deliver the substrates accommodated in the at least one first accommodating unit to the second accommodating
units corresponding to the same groups, respectively, wherein the delivery apparatuses deliver the substrates only perpendicular
to the transfer direction.

US Pat. No. 9,305,818

SUBSTRATE PROCESSING APPARATUS

Tokyo Electron Limited, ...

1. A substrate processing apparatus comprising a loading and unloading part provided to load and unload a transfer container
of a plurality of transfer containers containing substrates, and a processing part provided to perform a treatment to a substrate
of said substrates removed from the transfer container loaded into the loading and unloading part, said loading and unloading
part including:
an outer housing of said substrate processing apparatus, wherein the outer housing has a first face facing forward and provided
therein with at least one first opening corresponding to a first load port to allow a transfer container of said plurality
of transfer containers to be transferred between the first load port and an interior of the outer housing through the first
opening, wherein the outer housing also has a second face facing forward and provided therein with at least one second opening
corresponding to a second load port to allow a transfer container of said plurality of transfer containers to be transferred
between the second load port and the interior of the outer housing through the second opening, and wherein the second face
is disposed behind the first face and at a level higher than the first face;

the first load port arranged outside the outer housing and having a plurality of first container tables each for placing thereon
a transfer container of said plurality of transfer containers, wherein the first container tables are horizontally arrayed
in a first row;

the second load port arranged outside the outer housing and having a plurality of second container tables each for placing
thereon a transfer container of said plurality of transfer containers, wherein the second container tables are horizontally
arrayed in a second row, and the second row of the second container tables is disposed in parallel with the first row of the
first container tables, behind the first row of the first container tables, and at a level higher than the first row of the
first container tables;

a table moving mechanism configured to horizontally move each of the first container tables between a front position where
the first container table is in the first load port and a rear position where the first container table is located within
the outer housing;

a third container table arranged in the outer housing for placing thereon a transfer container of said plurality of transfer
containers;

a substrate transfer mechanism configured to remove a substrate of said substrates to be subjected to the treatment in the
processing part from a transfer container of said plurality of transfer containers placed on the third container table;

a container storing part disposed in the outer housing and provided therein with a plurality of fourth container tables each
for placing thereon a transfer container of said plurality of transfer containers, wherein some of the fourth container tables
are located vertically between the first container tables in their rear positions and the second container tables; and

a container transfer mechanism configured to place and remove a transfer container of said plurality of transfer containers
to and from the first, second, third and fourth container tables to transfer the transfer container of said plurality of transfer
containers between the tables, which are located in different positions, respectively.

US Pat. No. 9,307,653

SUBSTRATE CLEANING METHOD, SUBSTRATE CLEANING APPARATUS AND STORAGE MEDIUM FOR CLEANING SUBSTRATE

TOKYO ELECTRON LIMITED, ...

1. A substrate cleaning method for cleaning a surface of a substrate on which circuit patterns are formed, the substrate cleaning
method comprising:
a liquid film forming process that forms a liquid film on an entire surface of the substrate by supplying a cleaning liquid
from a central portion of the substrate toward a peripheral portion thereof while horizontally holding the substrate and rotating
the substrate about a central axis of the substrate;

a first drying process that forms a drying region by discharging a gas from a gas nozzle onto the surface of the substrate
from the central portion of the substrate toward the peripheral portion thereof after supplying the cleaning liquid and by
removing the cleaning liquid on the surface of the substrate, while rotating the substrate; and

a second drying process that removes the cleaning liquid remaining between the circuit patterns in the drying region after
the first drying process by a residual liquid removing device that moves in a diametrical direction of the substrate independently
from the gas nozzle, while rotating the substrate,

wherein a residual liquid removing position of the residual liquid removing device in the second drying process is located
to be spaced apart from a gas discharge position in the first drying process by a distance no smaller than a unit exposure
region for forming the circuit patterns in order to suppress non-uniform distribution of the cleaning liquid remaining between
the circuit patterns, and

said unit exposure region is a region to which light is irradiated through one time exposure by an exposure apparatus.

US Pat. No. 9,096,937

METHOD FOR ETCHING FILM HAVING TRANSITION METAL

TOKYO ELECTRON LIMITED, ...

1. A method of etching a transition metal-containing film using a substrate processing apparatus, wherein the substrate processing
apparatus comprises:
a processing container configured to define a processing chamber and a plasma generation chamber; and
a shielding unit provided between the processing chamber and the plasma generation chamber and formed with a plurality of
openings to communicate the processing chamber and the plasma generation chamber with each other, the shielding unit being
configured to give an electron to the ions being passed through the openings of the shielding unit, thereby neutralizing the
ions, and

wherein the method comprises:
supplying neutral particles of oxygen atoms to the processing chamber in which a workpiece is accommodated by generating plasma
of a first gas containing oxygen in the plasma generation chamber and passing the generated plasma of the first gas containing
oxygen through the openings of the shielding unit, thereby oxidizing the transition metal-containing film;

supplying a second gas to the processing chamber to complex transition metal in the transition metal-containing film oxidized
with the supplying of neutral particles of oxygen atoms to the processing chamber; and

supplying neutral particles of rare gas atoms to the processing chamber by generating plasma of a rare gas and passing the
generated plasma of the rare gas through the openings of the shielding unit, thereby removing complexes formed at the supplying
a second gas to the processing chamber.

US Pat. No. 9,263,256

METHOD OF FORMING SEED LAYER, METHOD OF FORMING SILICON FILM, AND FILM FORMING APPARATUS

Tokyo Electron Limited, ...

11. A method of forming a silicon film on an object to be processed, the method comprising:
forming a seed layer on a surface of an underlayer of the object to be processed; and
forming the silicon film on the seed layer,
wherein forming a seed layer is performed using the method of claim 1.

US Pat. No. 9,268,327

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Tokyo Electron Limited, ...

1. A substrate processing apparatus comprising:
a substrate transport mechanism for transferring a substrate from one module to another module, the substrate transport mechanism
comprises a horizontally movable holding member for holding a substrate and is provided in an area other than the one module
and the another module;

a detection section for detecting the position of the substrate on the holding member after the holding member has received
the substrate from the one module and before the holding member transports the substrate to the another module;

a calculating section for determining a displacement of the substrate on the holding member from a reference position based
on the results of detection by the detection section;

a substrate stage module for temporarily placing thereon the substrate which the substrate transport mechanism has received
from the one module is provided in the area where the substrate transport mechanism is provided other than the one module
and the another module; and

a control section configured to compare a detected displacement value, obtained in the calculating section, with an acceptable
range of displacement and, when the detected displacement value is within the acceptable range, output a control signal to
cause the substrate transport mechanism to transport the substrate to the another module, and when the detected displacement
value is out of the acceptable range, output a control signal to cause the substrate transport mechanism to transfer the substrate
to the substrate stage module, and then receive the substrate from the substrate stage module so that a detected displacement
value comes to fall within the acceptable range.

US Pat. No. 9,105,450

PLASMA PROCESSING APPARATUS

TOHOKU UNIVERSITY, (JP) ...

1. A plasma processing apparatus for plasma-processing an object to be processed by exciting a gas by using electromagnetic
waves, the plasma processing apparatus comprising:
a processing container;
an electromagnetic wave source which outputs electromagnetic waves;
a transmission line through which the electromagnetic waves output from the electromagnetic wave source are transmitted;
a plurality of dielectric plates which are arranged on an inner surface of the processing container and through which the
electromagnetic waves are emitted into the processing container;

at least three first coaxial waveguides which are adjacent to the plurality of dielectric plates and through which the electromagnetic
waves are transmitted to the plurality of dielectric plates;

wherein a first dielectric member is buried in at least one of the at least three first coaxial waveguides, and
a coaxial waveguide distributor which distributes and transmits the electromagnetic waves transmitted through the transmission
line to the at least three first coaxial waveguides,

wherein the coaxial waveguide distributor comprises: a main coaxial waveguide, at least one third coaxial waveguides connected
to a first connection portion of the main coaxial waveguide, and at least one fourth coaxial waveguides connected to a second
connection portion of the main coaxial waveguide, and

the at least one fourth coaxial waveguides and at least two of the at least three first coaxial waveguides are connected to
each other by one-to-many correspondence via a fifth coaxial waveguide, and the at least one third coaxial waveguides and
remaining of the at least three first coaxial waveguides are connected to each other by one-to-one correspondence;

wherein the at least three first coaxial waveguides are connected at regular pitches respectively to the plurality of dielectric
plates, and

wherein the first, the third, the fourth and the fifth coaxial waveguides are connected to the electromagnetic wave source.

US Pat. No. 9,305,795

PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method comprising:
preparing a substrate on which a first layer and a second layer having different densities are formed;
arranging the substrate within a processing chamber and introducing a processing gas for etching into the processing chamber;
and

generating surface wave plasma by exciting the processing gas with a microwave at a position spaced away from the substrate
and etching the first layer and the second layer at the same time with the plasma while maintaining an etching surface of
the first layer and an etching surface of the second layer are positioned on a same plane,

wherein both of the first layer and the second layer contain Si and N,
the processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas,
during the etching of the first layer and the second layer, a high frequency bias potential is applied to a predetermined
location at a side of a substrate such that the plasmarized processing gas is directed toward the substrate, and

a power per unit area of the substrate, which generates the high frequency bias potential, is about 0 W/m2 or more to about 400 W/m2 or less.

US Pat. No. 9,263,288

ETCHING METHOD USING BLOCK-COPOLYMERS

IMEC, Leuven (BE) Tokyo ...

1. A method for block-copolymer lithography, the method comprising:
forming, a pre-mask layer on a substrate, a pre-mask pattern that includes a plurality of ridges and valleys, wherein the
pre-mask layer and the substrate are different materials, wherein the plurality of ridges and valleys comprise a plurality
of guides for aligning a copolymer pattern structure;

subsequent to forming the pre-mask pattern, forming a neutral layer on the substrate, wherein the neutral layer fills the
valleys of the pre-mask pattern to planarize the pre-mask layer and promote self-organization of a block-copolymer layer;

forming a self-organizing block-copolymer layer on the planarized pre-mask layer, the self-organizing block-copolymer layer
comprising at least two polymer components having mutually different etching resistances, the self-organizing block-copolymer
layer further comprising a copolymer pattern structure formed by micro-phase separation of the at least two polymer components,
wherein the neutral layer is a random copolymer comprising monomers constitutive of each of the at least two polymer components;

etching selectively a first polymer component of the self-organizing block-copolymer layer, thereby remaining a second polymer
component; and

applying a plasma etching to the neutral layer using the second polymer component as a mask, wherein the plasma etching comprises
an inert gas and H2.

US Pat. No. 9,263,312

JOINING DEVICE AND JOINING POSITION ADJUSTMENT METHOD USING JOINING DEVICE

TOKYO ELECTRON LIMITED, ...

1. A joining device for joining a first member and a second member having a plate shape, the joining device comprising:
a first holding unit configured to load and hold the first member on its top surface;
a second holding unit disposed above the first holding unit while facing the first holding unit and configured to hold the
second member; and

a position adjustment mechanism configured to adjust a joining position between the first member held by the first holding
unit and the second member held by the second holding unit,

wherein the second holding unit is of a circular plate shape, and the position adjustment mechanism includes four position-adjusting
cam members disposed at equal intervals along an outer peripheral surface of the second holding unit, and moves the second
holding unit in a horizontal direction,

wherein the position adjustment mechanism further includes an angle-adjusting cam member configured to press a protrusion
formed on the outer peripheral surface of the second holding unit to rotate the second holding unit in a horizontal plane
about a center of the circular shape of the second holding unit as a center of rotation, and

wherein the position-adjusting cam member and the angle-adjusting cam member include:
a cylindrical outer peripheral ring;
a columnar eccentric cam provided in the outer peripheral ring through a bearing set; and
a drive shaft configured to drive the eccentric cam.

US Pat. No. 9,105,672

HEAT TREATMENT APPARATUS

Tokyo Electron Limited, ...

1. A heat treatment apparatus, installed in a clean room having a floor, comprising:
a heat treatment furnace including a vertical processing chamber having a furnace opening at the top and adapted to house
and heat-treat a plurality of processing objects, a heat insulator that surrounds the circumference of the processing chamber,
and a heater provided on the inner peripheral surface of the heat insulator;

a lid for closing the furnace opening of the processing chamber;
a holding tool, hung from the lid, for holding the plurality of processing objects in multiple stages; and
a lifting mechanism for raising and lowering the lid to open and close the furnace opening by the lid and to carry the holding
tool out of and into the processing chamber, wherein the heat treatment furnace is installed beneath the floor of the clean
room, and the lifting mechanism is installed above the floor of the clean room,

wherein the outer circumference of the heat treatment furnace is covered with a heater cover, and
a second exhaust line is connected to the heater cover.

US Pat. No. 9,230,824

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

TOKYO ELECTRON LIMITED, ...

1. A method of manufacturing a semiconductor device, the method comprising:
providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second
film having different dielectric coefficients within a processing container of a plasma processing apparatus; and

repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing
container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into
the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas,
and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer
film is etched through a mask.

US Pat. No. 9,281,220

LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A liquid processing apparatus, comprising:
a substrate holding unit holding a substrate within a processing space;
a first nozzle configured to supply a first processing liquid to the substrate held in the substrate holding unit;
a second nozzle configured to supply a second processing liquid to the substrate held in the substrate holding unit;
a discharge mechanism including a guide cup provided at an outer periphery of the substrate holding unit and capable of being
switched between a first discharge path and a second discharge path, the guide cup being configured to move between a first
position at which the processing space is connected with the first discharge path and a second position at which the processing
space is connected with the second discharge path; and

a control unit configured to control each of the substrate holding unit, the first nozzle, the second nozzle and the discharge
mechanism, respectively,

wherein the control unit is programmed to perform a first process that includes supplying the first processing liquid to the
substrate held in the substrate holding unit and discharging the first processing liquid within the processing space from
the first discharge path through the discharge mechanism, a second process, after the first process, that includes supplying
the second processing liquid to the substrate held in the substrate holding unit and discharging the second processing liquid
within the processing space from the second discharge path through the discharge mechanism, and after stop supplying of the
first processing liquid in the first process and prior to beginning of the second process, a nozzle switching operation from
the first nozzle to the second nozzle and a discharge mechanism switching operation from the first discharge path to the second
discharge path,

the control unit is further programmed to determine a longer one of a time required to perform the nozzle switching operation
and a time required to perform the discharge mechanism switching operation as a maximum preparation time and begin the nozzle
switching operation and the discharge mechanism switching operation at an earlier time than the completion time of the first
process by the maximum preparation time or more such that both of the nozzle switching operation and the discharge mechanism
switching operation are completed within the first process before the second processing liquid is supplied from the second
nozzle in the second process, and

the control unit is also programmed to dispose the guide cup at the first position in the first process and at the second
position in the second process, and initiate moving the guide cup from the first position to the second position while the
first process is being performed and complete moving the guide cup from the first position to the second position before the
second process begins.

US Pat. No. 9,192,878

LIQUID PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A liquid processing apparatus comprising:
at least one processing unit configured to perform a liquid process by supplying a chemical liquid to a substrate;
a reservoir configured to store the chemical liquid;
a supply line configured to supply the collected chemical liquid to the at least one processing unit;
a collecting line configured to collect the chemical liquid supplied to the at least one processing unit to return the chemical
liquid back to the reservoir; and

a gas supply unit configured to supply an inert gas into the collecting line,
wherein the gas supply unit includes a gas supply pipe connected with the collecting line, and the inert gas is supplied to
the chemical liquid in the collecting line thereby reducing an amount of oxygen to be dissolved in the chemical liquid in
the collecting line, such that corrosion of wirings formed on the substrate by recirculated chemical liquid is suppressed.

US Pat. No. 9,268,328

PRODUCTION EFFICIENCY IMPROVING APPARATUS, PRODUCTION EFFICIENCY IMPROVING METHOD, AND COMPUTER PROGRAM

TOKYO ELECTRON LIMITED, ...

19. A production efficiency improving method using a production efficiency improving apparatus in a production processing
system including a production execution control apparatus, a plurality of processing apparatuses, and a conveyance system
having a plurality of conveyance apparatuses and a conveyance control apparatus configured to control the plurality of conveyance
apparatuses, the method comprising:
communicating information with the plurality of processing apparatuses each of which is configured to process one or more
workpieces;

communicating control information regarding a control of each of the plurality of conveyance apparatuses with the conveyance
system, each of the conveyance apparatuses being configured to convey one or more workpieces to one or more of the plurality
of processing apparatuses;

estimating a carry-out time when a processing apparatus of the plurality of processing apparatuses requires a carry-out of
a workpiece processed by the processing apparatus or a carry-in time when the processing apparatus requires a carry-in of
a workpiece; and

generating control information for the conveyance apparatus such that one or more of the plurality of conveyance apparatuses
arrive at one or more of the plurality of processing apparatuses at a time corresponding to the estimated carry-out time and
carry-in time,

wherein the production efficiency improving apparatus is separately provided from the conveyance control apparatus and the
production execution control apparatus.

US Pat. No. 9,313,895

METHOD FOR FORMING COPPER WIRING

TOKYO ELECTRON LIMITED, ...

1. A Cu wiring forming method for forming a Cu wiring by filling Cu in a recess formed in a predetermined pattern in a Si-containing
interlayer insulating film, of a substrate, the Cu wiring forming method comprising:
forming an NH group only on a surface of the Si-containing interlayer insulating film such that the surface of the Si-containing
interlayer insulating film becomes hydrophilic;

forming a Mn film, which becomes a self-aligned barrier film by reaction with an underlying base, at least on a surface of
the recess by chemical vapor deposition;

forming a Cu film by physical vapor deposition to fill the recess with the Cu film; and
forming a Cu wiring in the recess by polishing the entire surface of the substrate by chemical mechanical polishing,
wherein the Cu wiring forming method further comprises, between said forming the NH group and said forming the Mn film, forming
an OH group or a H group on the surface of the Si-containing interlayer insulating film.

US Pat. No. 9,313,872

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a processing chamber including a dielectric window;
a coil shaped RF antenna provided outside the dielectric window;
a substrate supporting unit, provided in the processing chamber, configured to mount thereon a target substrate to be processed;
a processing gas supply unit configured to supply a desired processing gas to the processing chamber to perform a desired
plasma process on the target substrate;

an RF power supply unit configured to supply an RF power for RF discharge of the processing gas to the RF antenna to generate
a plasma of the processing gas by an inductive coupling in the processing chamber;

a floating coil that is electrically floating and arranged at a position outside the processing chamber, wherein the floating
coil is to be coupled with the RF antenna by electromagnetic induction;

a variable capacitor provided in a loop of the floating coil and having an electrostatic capacitance; and
a capacitance control unit configured to change a direction of a current flowing through the floating coil and to improve
uniformity of a plasma density distribution below the floating coil in a radial direction with respect to the floating coil
by dynamically varying the electrostatic capacitance of the variable capacitor,

wherein the floating coil and the RF antenna are arranged in a same plane.

US Pat. No. 9,272,310

LIQUID PROCESSING APPARATUS

Tokyo Electron Limited, ...

1. A liquid processing apparatus comprising:
a substrate holding unit configured to hold a substrate horizontally;
a nozzle configured to supply a processing liquid to the substrate held by the substrate holding unit;
an elevating member configured to ascend/descend with respect to the substrate holding unit; and
an elevation driving unit configured to raise/lower the elevating member,
wherein the substrate holding unit includes a holding base, and a first engagement member and a second engagement member which
are provided to be movable in the holding base, and each of the first and second engagement members is moved by a biasing
force of a biasing force giving mechanism between an engaging position where each of the first and second engagement members
is engaged with the peripheral edge of the substrate and a releasing position where each of the first and second engagement
members releases the substrate,

the first engagement member is connected with a first contact unit contacted with the outer peripheral surface of the elevating
member,

the second engagement member is connected to a second contact unit contacted with the outer peripheral surface of the elevating
member,

the elevating member includes a first portion to be contacted and a second portion to be contacted at a lower position than
the first portion which are provided in the outer peripheral surface of the elevating member and disposed at different positions
in the ascending/descending direction of the elevating member,

when the first contact unit is in contact with the first portion to be contacted, the first engagement member is located at
the engaging position and the second engagement member is located at the releasing position, and

when the second contact unit is in contact with the second portion to be contacted, the second engagement member is located
at the engaging position and the first engagement member is located at the releasing position.

US Pat. No. 9,196,460

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

37. A plasma processing apparatus comprising:
a processing container which is formed of metal and receives a substrate that is plasma-processed;
an electromagnetic wave source which supplies electromagnetic waves required to excite the plasma in the processing container;
one, two, or more dielectric plates which are disposed on a lower surface of a lid of the processing container, are partially
exposed to inside of the processing container, and transmit the electromagnetic wave supplied from the electromagnetic wave
source to inside of the processing container; and

a metal electrode that is provided on a lower surface of the dielectric plate;
wherein the electromagnetic wave transmitted from the dielectric plates is propagated along a metal surface exposed to inside
of the processing container, the metal surface comprising a lower surface of the metal electrode and a lower surface of the
lid where the dielectric plate is not disposed,

wherein the plasma processing apparatus further comprises:
a first gas supply source which supplies a first gas including a plasma excitation gas;
a second gas supply source which supplies a desired second gas;
a first gas discharging unit which discharges the first gas supplied from the first gas supply source into a first space that
is an inner space of the processing container, which is adjacent to the lower surface of the lid; and

a second gas discharging unit which discharges the second gas supplied from the second gas supply source into a second space
that is an inner space of the processing container formed between the first space and a space for receiving the substrate.

US Pat. No. 9,070,727

SUBSTRATE PROCESSING SYSTEM, SUBSTRATE TRANSFER METHOD AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A substrate processing system comprising:
a plurality of substrate processing units each including multiple substrate processing modules configured to perform a process
on a substrate;

a substrate mounting table configured to mount thereon a substrate receptacle accommodating therein substrates;
substrate buffers, which respectively correspond to the substrate processing units, each being configured to temporarily accommodate
therein substrates;

a first substrate transfer device configured to take out substrates from the substrate receptacle on the substrate mounting
table and transfer the substrates into at least one substrate buffer;

a second substrate transfer device provided in each substrate processing unit and configured to transfer a substrate between
the substrate buffer and the substrate processing module; and

an inter-buffer delivery device configured to deliver a substrate between the substrate buffers,
wherein when one substrate processing unit is incapable of performing a process on a substrate, an unprocessed substrate within
the substrate buffer corresponding to the one substrate processing unit is delivered into the substrate buffer corresponding
to another substrate processing unit by the inter-buffer delivery device, and

when one substrate processing unit is incapable of performing a substrate process, the first substrate transfer device is
configured to transfer the substrate completely processed by the one substrate processing unit into the substrate receptacle
from the substrate buffer corresponding to the one substrate processing unit, and to return substrates, which are delivered
into the substrate buffer corresponding to another substrate processing unit by the inter-buffer delivery device and then
completely processed by the another substrate processing unit, back into the substrate receptacle from the substrate buffer
corresponding to the another substrate processing unit one by one.

US Pat. No. 9,412,627

LIQUID PROCESSING METHOD AND LIQUID PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A liquid processing apparatus comprising:
a substrate rotation unit configured to hold and rotate a substrate having thereon a hydrophobic region;
a rinse solution discharge unit configured to supply, onto the substrate held by the substrate rotation unit, a rinse solution
for rinsing a chemical liquid supplied on the substrate, the rinse solution discharge unit including a first rinse solution
discharge unit configured to supply the rinse solution at a first flow rate and a second rinse solution discharge unit configured
to supply the rinse solution at a second flow rate; and

a programmable controller configured to control the substrate rotation unit and the rinse solution discharge unit to supply
the rinse solution on a central portion of a surface of the substrate from the first rinse solution discharge unit at the
first flow rate while rotating the substrate by the substrate rotation unit at a first rotation speed; supply the rinse solution
from the second rinse solution discharge unit at the second flow rate lower than the first flow rate while rotating the substrate
by the substrate rotation unit at a second rotation speed lower than the first rotation speed; and move the rinse solution
discharge unit toward a periphery of the substrate while the rinse solution is supplied from the second rinse solution discharge
unit and is not supplied from the first rinse solution discharge unit,

wherein the programmable controller is programmed to control the second flow rate and the second rotation speed such that
the rinse solution supplied at the second flow rate flows in a stripe shape on the surface of the substrate from the central
portion of the substrate toward the periphery thereof, and

an opening diameter of the second rinse solution discharge unit is set to be smaller than an opening diameter of the first
rinse solution discharge unit.

US Pat. No. 9,082,798

SUBSTRATE COLLECTING METHOD

TOKYO ELECTRON LIMITED, ...

1. A substrate collecting method for withdrawing a substrate by a transfer arm, the method comprising:
a substrate peripheral portion detecting step for detecting a peripheral portion of the substrate, which is a target to be
withdrawn, based on output images from a plurality of imaging units disposed along a peripheral portion shape of the substrate;

a substrate position deviation correcting step for, when the peripheral portion of the substrate can be detected by at least
one imaging unit, acquiring a positional deviation from a preset reference position based on a horizontal position of the
substrate obtained from a shape of the detected peripheral portion, and correcting the positional deviation by moving the
substrate in a horizontal direction if the deviation exceeds a withdrawable range; and

a substrate collecting step for withdrawing the substrate by the transfer arm when the deviation does not exceed the withdrawable
range, or when the deviation is reduced not to exceed the withdrawable range through the substrate position deviation correcting
step.

US Pat. No. 9,530,626

METHOD AND APPARATUS FOR ESC CHARGE CONTROL FOR WAFER CLAMPING

TOKYO ELECTRON LIMITED, ...

1. A method for treating a substrate, comprising:
receiving the substrate in a plasma processing chamber comprising an electrostatic chuck (ESC);
igniting a plasma in the plasma processing chamber;
applying, after igniting the plasma, an ESC voltage to the ESC, with the ESC voltage increasing in a step-wise manner from
a first set point that includes a first voltage magnitude to a second set point that includes a second voltage magnitude using
at least one intermediate set point disposed between the first set point and the second set point, the intermediate set point
including an intermediate voltage magnitude between the first and second voltage magnitudes; and

etching the substrate using the plasma.

US Pat. No. 9,268,739

DATA ACQUISITION METHOD IN SUBSTRATE PROCESSING APPARATUS AND SENSOR SUBSTRATE

Tokyo Electron Limited, ...

1. A method of acquiring data in a substrate processing apparatus including a carrier block to which a carrier storing therein
a plurality of substrates is carried, a plurality of processing modules that process substrates which are carried therein
from the carrier block, and a substrate transport mechanism that transports the substrates between the processing modules,
the substrate transport mechanism having a base and a first holding member mounted to the base to advance and retract, said
method comprising:
holding a sensor substrate by the first holding member, the sensor substrate having a sensor section for acquiring data on
the processing modules and a first power supply section with a rechargeable electricity storage section for supplying electric
power to the sensor section;

advancing the first holding member to transfer the sensor substrate to a processing module;
acquiring data on the processing module by the sensor section of the sensor substrate; and
causing the first holding member to receive the sensor substrate, whose electric charge is consumed, from the processing module
and retract, and charging the first power supply section of the sensor substrate in a non-contact manner by a second power
supply section that moves together with the base while the first holding member holding the substrate is in its retracted
position.

US Pat. No. 9,281,154

MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A microwave introducing mechanism, provided in a microwave transmission line through which a microwave outputted from a
microwave output unit of a microwave plasma source is transmitted, for introducing the microwave into a chamber, the microwave
plasma source being configured to generate a microwave plasma in the chamber, the mechanism comprising:
an antenna unit including a planar antenna configured to radiate the microwave into the chamber through the microwave transmission
line;

a tuner provided in the microwave transmission line to adjust an impedance of the microwave transmission line; and
a heat dissipation device configured to dissipate a heat from the antenna unit,
wherein the tuner includes:
a tuner main body having a tubular outer conductor and a tubular inner conductor coaxially provided in the outer conductor,
the tuner main body serving as a part of the microwave transmission line;

a slug provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner
conductor, the slug having an annular shape and being made of a dielectric material; and

a driving device configured to move the slug, wherein the driving device includes a sliding member being inserted into the
slug and sliding along the inside of the inner conductor while being brought into contact with an inner circumference surface
of the inner conductor, the sliding member having a screw hole, and

wherein the heat dissipation device includes:
a heat pipe, having a heat input end and a heat dissipation end, configured to transfer the heat of the antenna unit from
the heat input end to the heat dissipation end by disposing the heat input end in the antenna unit; and

a heat dissipation unit provided at the heat dissipation end of the heat pipe to dissipate the heat transferred to the heat
dissipation end.

US Pat. No. 9,266,146

FILM FORMING METHOD AND PROCESSING SYSTEM

TOKYO ELECTRON LIMITED, ...

1. A film forming method for performing a film forming process on a target object, comprising:
forming, on the target object, an insulating layer having a recess;
a first process including:
(i) a first thin film forming step of forming a first thin film containing a first metal and an oxidation step of forming
an oxide film by oxidizing the first thin film, or

(ii) an oxide film forming step of forming the oxide film containing the first metal in a single step;
a second process including a second thin film forming step of forming a second thin film containing a second metal on the
oxide film; and

a third process including forming a third thin film containing Cu on the second thin film after the second process,
wherein the oxide film is in direct contact with a surface of the insulating layer in the recess, and
wherein, in the second process, the second thin film is oxidized by oxygen supplied from the oxide film.

US Pat. No. 9,275,881

LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A liquid processing apparatus comprising:
a cover plate configured to cover a substrate from above;
a cover plate rotating mechanism configured to rotate the cover plate;
a nozzle including a first discharging port provided in the rotational center portion of the cover plate and configured to
supply a rinse liquid toward the substrate, and a second discharging port configured to supply a rinse liquid radially toward
the cover plate; and

a nozzle driving unit configured to move the nozzle to an ascending position and a descending position with respect to the
cover plate,

wherein the nozzle supplies the rinse liquid toward the cover plate from the second discharging port at the ascending position
and supplies the rinse liquid toward the substrate from the first discharging port at the descending position, and

the nozzle is a cylindrical body having a lower flange, and the lower flange is provided with the first discharging port and
the second discharging port.

US Pat. No. 9,275,836

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method using a plasma processing apparatus including a processing chamber that accommodates a substrate
therein; a lower electrode positioned within the processing chamber and serving as a mounting table on which the substrate
is mounted; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency
power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode; a second
high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first
frequency to the lower electrode; first and second bias distribution control electrodes positioned above the lower electrode
and within an insulator while being separated from and electrically insulated from the lower electrode by the insulator; first
and second bias distribution control power supplies configured to apply a square wave voltage of a third frequency lower than
the second frequency to the first and second bias distribution control electrode; a focus ring installed on a peripheral portion
of a top surface of the lower electrode; a third bias distribution control electrode positioned below the focus ring; and
a third bias distribution control power supply configured to apply the square wave voltage of the third frequency lower than
the second frequency to the third bias distribution control electrode, the method comprising:
applying a first square wave voltage of the third frequency lower than the second frequency to the first bias distribution
control electrode from the first bias distribution control power supply and controlling a bias distribution above the lower
electrode;

applying a second square wave voltage of the third frequency lower than the second frequency to the second bias distribution
control electrode from the second bias distribution control power supply and controlling a bias distribution above the lower
electrode;

applying a third square wave voltage of the third frequency lower than the second frequency to the third bias distribution
control electrode from the third bias distribution control power supply and controlling a bias distribution above the lower
electrode;

applying a DC voltage to the first bias distribution control electrode from an electrostatic chuck DC power supply to control
the first bias distribution control electrode to serve as an electrode of an electrostatic chuck configured to electrostatically
attract the substrate; and

applying a DC voltage to the second bias distribution control electrode from the electrostatic chuck DC power supply to control
the second bias distribution control electrode to serve as an electrode of the electrostatic chuck configured to electrostatically
attract the substrate,

wherein the first bias distribution control electrode is positioned at a central portion of the insulator, and the second
bias distribution control electrode is positioned at a peripheral portion of the insulator while being concentrically arranged
with the first bias distribution control electrode,

the first bias distribution control electrode is electrically connected with the electrostatic chuck DC power supply and the
first bias distribution control power supply,

the second bias distribution control electrode is electrically connected with the electrostatic chuck DC power supply and
the second bias distribution control power supply, and

the third bias distribution control electrode is electrically connected with the third bias distribution control power supply
without being connected with an electrostatic chuck DC power supply, and without being connected with the first bias distribution
control power supply and the second bias distribution control power supply.

US Pat. No. 9,263,297

METHOD FOR SELF-ALIGNED DOUBLE PATTERNING WITHOUT ATOMIC LAYER DEPOSITION

Tokyo Electron Limited, ...

1. A method for patterning a substrate, the method comprising:
receiving a substrate having a patterned layer positioned on an underlying layer, the patterned layer comprising at least
two layers of differing composition including an first component layer positioned on a second component layer;

executing an isotropic etch operation using chemistry that selectively etches the first component layer as compared to the
second component layer such that the first component layer is at least horizontally slimmed relative to the second component
layer;

depositing a planarizing film on the substrate such that the planarizing film yields a first planar surface on an upper portion
of the substrate, the planarizing film including a solubility-changeable material;

depositing a solubility-changing agent on the first planar surface of the planarizing film and activating the solubility-changing
agent such that the solubility-changing agent changes a solubility of a top portion of the planarizing film, the top portion
of the planarizing film having a thickness extending vertically from the first planar surface of the planarizing film to a
predetermined depth within the planarizing film;

removing the top portion of the planarizing film resulting in a top surface of the first component layer being uncovered;
executing an anisotropic etching operation that etches through the first component layer and that etches through uncovered
portions of the second component layer using the planarizing film as an etch mask; and

removing the planarizing film such that a second pattern defined by the second component layer is uncovered.

US Pat. No. 9,082,592

PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus for performing a plasma process on a substrate mounted on a mounting table in a processing
chamber by generating inductively coupled plasma within the processing chamber by applying a high frequency power to a high
frequency antenna, the apparatus comprising:
a multiple number of gas nozzles protruding from a sidewall of the processing chamber toward a center of the processing chamber
in a space above the mounting table, each gas nozzle having a gas discharge hole at a leading end of the gas nozzle in a protruding
direction and a gas discharge hole at a sidewall of the gas nozzle;

a rotation device configured to rotate each of the gas nozzles on each central axis of the gas nozzles, each central axis
being extended in the protruding direction of each of the gas nozzles; and

a revolution device configured to allow the gas nozzles to revolve around a central axis of the processing chamber along a
circumference of the processing chamber,

wherein the rotation device includes: a rotation member provided at a rear end portion of each of the gas nozzles; and a rotation
driving unit connected with the rotation member via a rotation transmitting member,

the revolution device is connected with the rotation driving unit at an outside of the processing chamber, while the rotation
driving unit is installed within the revolution device, and

the revolution device is connected with a revolution driving unit.

US Pat. No. 9,269,599

SUBSTRATE RELAY APPARATUS, SUBSTRATE RELAY METHOD, AND SUBSTRATE PROCESSING APPARATUS

Tokyo Electron Limited, ...

8. A substrate relay apparatus that is arranged between at least two adjacent transfer apparatuses of a plurality of transfer
apparatuses that are configured to transfer a substrate having a circular shape to/from a processing apparatus, which performs
a predetermined process on the substrate, the substrate relay apparatus comprising:
a chassis that is arranged to surround openings formed on side walls of the adjacent transfer apparatuses, the chassis having
a partition wall with a substrate transfer port that is arranged so as to divide an internal space within the chassis between
the transfer apparatuses, the chassis having a dimension in a width direction between the side walls of the adjacent transfer
apparatuses that is smaller than a diameter of the substrate;

a gate valve that is arranged inside the chassis between the side walls of the adjacent transfer apparatuses and is configured
to open and close the substrate transfer port; and

at least three support pins that are arranged so that at least one of the support pins is arranged on one side of the gate
valve and the other support pins are arranged on other side the gate valve to support the substrate that straddles the gate
valve.

US Pat. No. 9,268,230

PERIPHERAL EXPOSURE METHOD AND APPARATUS THEREFOR

TOKYO ELECTRON LIMITED, ...

1. A peripheral exposure apparatus for performing an exposure treatment by illuminating light to a periphery of a resist film
formed on a substrate to be processed, the peripheral exposure apparatus comprising:
a substrate holder configured to horizontally hold the substrate to be processed;
a driving unit configured to rotate the substrate holder on a horizontal plane;
a light source unit having a light source, and configured to illuminate light with respect to the periphery of the substrate
to be processed;

a temperature measurement unit configured to measure a temperature of the substrate to be processed;
a cooler configured to bring a coolant gas into contact with the periphery of the resist film of the substrate to be processed
and configured to cool the substrate to be processed;

a moving unit configured to move the cooler to a position in the vicinity of an upper surface of the substrate to be processed
and a standby position; and

a control unit configured to control the substrate holder, the driving unit, the light source unit, the temperature measurement
unit, the cooler and the moving unit,

wherein in a state where the substrate to be processed is horizontally held, the substrate holder rotates on the horizontal
plane based on a signal provided from the control unit,

wherein in a state where the cooler is moved to the position in the vicinity of the upper surface of the substrate to be processed,
the substrate to be processed is cooled by the cooler, and

wherein when the temperature of the substrate to be processed is equal to or less than a predetermined temperature, the exposure
treatment is performed by the light source unit.

US Pat. No. 9,287,145

SUBSTRATE TREATMENT SYSTEM, SUBSTRATE TRANSFER METHOD, AND A NON-TRANSITORY COMPUTER STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A substrate treatment system comprising a treatment station in which a plurality of treatment units each treating a substrate,
and an interface station in a casing which is located between said treatment station and an exposure apparatus, the interface
station delivering the substrate between said treatment station and an exposure apparatus provided outside the casing,
said interface station comprising:
a cleaning unit that cleans at least a rear surface of the substrate;
an inspection unit that inspects at least the rear surface of the cleaned substrate;
a substrate transfer mechanism including an arm that transfers the substrate between said cleaning unit and said inspection
unit;

a buffer housing part that temporarily houses the substrate which has been inspected in said inspection unit; and
a substrate transfer control part, the substrate transfer control part is configured to
control the cleaning unit to clean at least the rear surface of the substrate,
control the substrate transfer mechanism to transfer the substrate from said cleaning unit into said inspection unit;
control the inspection unit to inspect at least the rear surface of the cleaned substrate transferred from the cleaning unit,
to determine from a result of the inspection by the inspection unit whether the substrate is in an exposable state that allows
exposure in the exposure apparatus, and when it is determined that the substrate is not in the exposable state to determine
from the result of the inspection whether the substrate becomes the exposable state by re-cleaning;

control the substrate transfer mechanism to transfer the substrate which is inspected to the buffer housing part before transferring
the substrate based on the result of the inspection by the inspection unit;

when it is determined from the result of the inspection that the state of the substrate is in the exposable state, control
said substrate transfer mechanism to transfer the substrate to the exposure apparatus,

when it is determined from the result of the inspection that the state of the substrate becomes the exposable state by re-cleaning,
control said substrate transfer mechanism to transfer the substrate again to said cleaning unit and control the cleaning unit
to re-clean at least the rear surface of the substrate,

when it is determined from the result of the inspection that the state of the substrate does not become the exposable state
by re-cleaning, stop the treatments on the substrate, and control the substrate transfer mechanism to facilitate collecting
the substrate;

the cleaning unit, the inspection unit, and the buffer housing part are arranged in the same casing which is located between
the treatment stations and the exposure apparatus,

wherein each of said cleaning unit and said inspection unit is provided at multiple tiers in an up and down direction on either
a front side or a back side in said interface station, and

wherein said substrate transfer mechanism is provided in a region adjacent to said cleaning units and said inspection units
provided at multiple tiers in the up and down direction.

US Pat. No. 9,263,250

METHOD AND APPARATUS OF FORMING SILICON NITRIDE FILM

TOKYO ELECTRON LIMITED, ...

1. A method of forming a silicon nitride film on a surface to be processed of a target object, the method comprising:
repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing
silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating
decomposition of the silicon source gas toward the surface to be processed;

performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermined
number of times; and

performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the
first process and the performance of the second process to form the silicon nitride film on the surface to be processed,

wherein the first predetermined number is equal to or greater than 2, and the second and third predetermined numbers are equal
to or greater than 1.

US Pat. No. 9,278,768

PROCESS LIQUID CHANGING METHOD AND SUBSTRATE PROCESSING APPARATUS

Tokyo Electron Limited, ...

1. A substrate processing apparatus comprising:
a storage tank configured to store a process liquid;
a circulation line having ends thereof connected to the storage tank;
a circulation pump provided on the circulation line;
a process liquid supply nozzle connected to the circulation line through a branch line; and
a circulation line purging mechanism that removes the process liquid existing in a zone of the circulation line on demand,
the zone extending from a first position to a second position and including a junction area where the branch line is connected
to the circulation line between the first and second positions;

wherein the circulation line purging mechanism includes:
a purge gas supply unit that supplies a purge gas to the circulation line from the first position of the circulation line
to drive the process liquid existing in the zone of the circulation line downstream;

a drain unit having a drain line connected to the second position of the circulation line, the drain line having a first on-off
valve to allow the process liquid, which is being driven downstream through the zone of the circulation line by the purge
gas supplied by the purge gas supply unit, to be drained from the circulation line through the drain line,

the drain unit further comprising a second on-off valve to prevent process liquid from being driven from the second position
into the storage tank by the purge gas.

US Pat. No. 9,303,788

LOAD LOCK DEVICE

TOKYO ELECTRON LIMITED, ...

1. A load lock device, comprising:
a container with an opening formed therein and configured to be selectively maintained at an atmospheric environment and a
vacuum atmosphere;

a holding unit arranged within the container and configured to hold objects to be processed;
an elevation mechanism configured to vertically move the holding unit; and
a pressure regulating mechanism configured to vacuum-evacuate the container through the opening of the container,
wherein the elevation mechanism includes:
at least two vertically-extended elevation shaft members connected to the holding unit; and
a drive unit configured to vertically move the elevation shaft members,
wherein the elevation shaft members are arranged opposite each other with the opening interposed therebetween.

US Pat. No. 9,304,398

DEVELOPING TREATMENT APPARATUS AND DEVELOPING TREATMENT METHOD

Tokyo Electron Limited, ...

1. A developing treatment apparatus for performing development by supplying a developing solution to a substrate having a
front surface coated with a positive resist or a negative resist and then subjected to exposure, the developing treatment
apparatus comprising:
a substrate holding part that horizontally holds the substrate;
a rotary drive mechanism that rotates the substrate holding part around a vertical axis;
a positive developing solution supply nozzle that supplies a developing solution for the positive resist to the front surface
of the substrate held by the substrate holding part;

a negative developing solution supply nozzle that supplies a developing solution for the negative resist to the front surface
of the substrate held by the substrate holding part;

a cup body that is formed in a bottomed circular shape with an upper side open and collects the developing solution scattering
with rotation of the substrate;

a first developing solution drain pipeline that is connected to an outer peripheral side of the cup body and drains one of
the developing solutions for the positive resist and the negative resist collected by the cup body;

a second developing solution drain pipeline that is connected to an inner peripheral side of the cup body and drains another
of the developing solutions for the positive resist and the negative resist collected by the cup body;

a fixed cup that has a peripheral wall between an inner peripheral wall of the cup body and an outer peripheral wall of the
cup body and is formed on a lower side of the substrate held by the substrate holding part;

a movable cup that has a partition between the peripheral wall of the fixed cup and the outer peripheral wall of the cup body,
and introduces one of the scattering developing solutions for the positive resist and the negative resist into an inner peripheral
flow path surrounded by the partition and the peripheral wall of the fixed cup by raising the partition and introduces another
of the scattering developing solutions for the positive resist and the negative resist into an outer peripheral flow path
surrounded by the partition and the outer peripheral wall of the cup body by lowering the partition; and

a control unit that raises the movable cup when using the developing solution for the positive resist and lowers the movable
cup when using the developing solution for the negative resist.

US Pat. No. 9,293,299

PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a processing chamber having a dielectric window;
a substrate holding unit configured to hold thereon a processing target substrate within the processing chamber;
a processing gas supply unit configured to supply a processing gas into the processing chamber to perform a plasma process
on the substrate;

a RF antenna, provided outside the dielectric window to generate plasma of the processing gas within the processing chamber
by inductive coupling, having a plurality of coil segments that are arranged along a loop having a predetermined shape and
a predetermined size while electrically connected to each other in parallel;

a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency
electric discharge of the processing gas;

at least one floating coil that is in an electrically floating state and provided outside the processing chamber to be coupled
to the RF antenna by an electromagnetic induction; and

a capacitor provided in a loop of the at least one floating coil,
wherein an angular frequency on a radius of the at least one floating coil is denoted by ?, a mutual inductance between the
RF antenna and the at least one floating coil is denoted by M, an antenna current flowing in the RF antenna is denoted by
IRF, a self-inductance of the at least one floating coil is denoted by L, and an electrostatic capacitance of the capacitor is
denoted by C, and an induced current IIND flowing in the at least one floating coil is expressed by an approximation equation:

IIND??M?IRF/(L?1/C?), and

the at least one floating coil and the RF antenna are arranged on the same plane.

US Pat. No. 9,299,579

ETCHING METHOD AND PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. An etching method of selectively etching a first region formed of silicon oxide with respect to a second region formed
of silicon nitride, the etching method comprising:
a protective film forming process of forming a protective film such that a thickness of the protective film on the second
region is larger than a thickness of the protective film formed on the first region by exposing a target object including
the first region and the second region to plasma of a fluorocarbon gas, the fluorocarbon gas being represented by CxFy; and

a first region etching process of etching the first region by exposing the target object to plasma of a fluorocarbon gas,
wherein a high frequency bias power supplied to a mounting table configured to mount the target object thereon in the protective
film forming process is set to be lower than a high frequency bias power supplied to the mounting table in the first region
etching process, and a temperature of the target object is set to 60° C. or more to 250° C. or less in the protective film
forming process.

US Pat. No. 9,279,184

METHOD OF FORMING A PATTERN AND SUBSTRATE PROCESSING SYSTEM

Tokyo Electron Limited, ...

1. A method of forming a pattern, comprising steps of:
forming a predetermined pattern in a silicon-containing film by etching the silicon-containing film deposited on a substrate
through a mask by plasma generated from an etching gas containing a fluorocarbon gas; and

depositing a silicon oxide film or a silicon nitride film on a surface of the predetermined pattern formed by etching the
silicon-containing film by oxidizing or nitriding a silicon-containing layer adsorbed on the etched surface of the predetermined
pattern by supplying a silicon compound gas, by using plasma generated from an oxidation gas or a nitriding gas after the
step of forming the predetermined pattern in the silicon-containing film by the etching.

US Pat. No. 9,214,363

COATING AND DEVELOPING APPARATUS, COATING FILM FORMING METHOD, AND STORAGE MEDIUM STORING PROGRAM FOR PERFORMING THE METHOD

TOKYO ELECTRON LIMITED, ...

1. A coating and developing apparatus having a resist film forming unit that applies a resist solution to a front surface
of a substrate to form a resist film, and a developing unit that develops the resist film having been subjected to immersion
exposure, the coating and developing apparatus comprising:
a first peripheral edge cleaner that supplies a solvent to the resist film present in a peripheral edge portion of the substrate
thereby to remove the same;

a protective film forming unit that supplies a coating solution onto the resist film thereby to form a water-repellent protective
film that protects the resist film from a liquid when performing the immersion exposure;

an adhesion-improving processor having an adhesion-improving fluid feeder that supplies, before forming the protective film,
an adhesion-improving fluid only to the peripheral edge portion of the substrate, the peripheral edge portion having an exposed
surface exposed due to removal of the resist film from the peripheral edge portion, wherein the adhesion improving fluid improves
adhesion of the protective film to the exposed surface, wherein:

the adhesion-improving processor further has a rotary stage configured to rotate about a vertical axis while holding the substrate
horizontally; and

the adhesion-improving fluid feeder has:
a first adhesion-improving fluid supply nozzle adapted to locate above the peripheral edge portion of the front surface of
the substrate held on the rotary stage;

a second adhesion-improving fluid supply nozzle adapted to locate below a peripheral edge portion of a back surface of the
substrate held on the rotary stage; and

a suction nozzle that is positioned radially outside the substrate to suction and remove the adhesion improving fluid having
been supplied to the peripheral edge portion of the substrate;

the protective film forming unit has a rotary stage capable of rotating about a vertical axis while holding the substrate,
and a nozzle that supplies a coating solution for forming a protective film to the substrate held on the rotary stage, and

the adhesion improving processor is installed within the protective film forming unit, and the rotary stage in the protective
film forming unit is used as the rotary stage in the adhesion-improving processor.

US Pat. No. 9,279,183

FILM FORMING APPARATUS AND METHOD OF OPERATING THE SAME

TOKYO ELECTRON LIMITED, ...

1. A method of forming a carbon film on a substrate held by a substrate holding unit formed of a quartz material, the method
comprising:
introducing the substrate holding unit without the substrate to inside a processing container;
forming a tolerant pre-coating film on a surface of the substrate holding unit;
loading the substrate onto the substrate holding unit;
forming the carbon film on the substrate, wherein the tolerant pre-coating film improves an adhesion of a carbon film being
formed on the tolerant pre-coating film of the substrate holding unit to thereby prevent the carbon film of the substrate
holding unit from peeling off;

unloading the substrate from the substrate holding unit; and
by supplying a cleaning gas to inside the processing container, cleaning the surface of the substrate holding unit to remove
a carbon film being formed on the substrate holding unit, wherein the tolerant pre-coating film is a silicon nitride film
or a silicon film, and the tolerant pre-coating film remains on the surface of the substrate holding unit after the cleaning.

US Pat. No. 9,126,229

DEPOSIT REMOVAL METHOD

TOKYO ELECTRON LIMITED, ...

1. A deposit removal method for removing deposits deposited on a surface of a pattern formed on a substrate during a shallow
trench isolation process, the deposit removal method comprising:
an oxygen plasma treatment process for exposing the substrate to an oxygen plasma while heating the substrate to a temperature
set within a range from about 200° C. to 300° C.; and then

a cycle treatment process for exposing the substrate to a gaseous mixture of hydrogen fluoride gas and alcohol gas in a processing
chamber while repeating a first period and a second period alternately and maintaining the temperature of the substrate within
a range from about 10° C. to 30° C.,

wherein, in the first period, a partial pressure of the alcohol gas is set to a first partial pressure,
wherein, in the second period, the partial pressure of the alcohol gas is set to a second partial pressure which is lower
than the first partial pressure,

wherein, in the cycle treatment process, the partial pressure of the alcohol gas is adjusted by controlling a pumping rate
while supplying the gaseous mixture at a fixed flow rate throughout the first period and the second period,

wherein, in the first period, a pressure in the processing chamber is set within a range from about 5 Torr to 7 Torr,
wherein in the second period, the pressure in the processing chamber is set within a range from about 1.3 Torr to 5 Torr,
wherein the first partial pressure is a partial pressure at which the deposit is removable by action of the gaseous mixture,
and

wherein each of the first and the second period is set to be about 5 to 20 seconds.

US Pat. No. 9,169,558

FLUID CONTROL APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A fluid control apparatus comprising:
a fluid controlling unit including M fluid control lines each having one flow rate controller as a basic constituting element,
one inlet and one outlet, and

a fluid introducing unit configured to introduce a plurality of fluids to the fluid controlling unit, and having N inlets
and M outlets by a plurality of on-off valves, where N is greater than M and the M outlets of the fluid introducing unit and
M inlets of the fluid controlling unit being connected one-on-one,

wherein the fluid introducing unit is divided into an inlet-side shutoff/open part made up of a plurality of on-off valves,
disposed on the inlet side, having a total of N inlets and a total of K outlets, and a fluid controlling unit-side shutoff/open
part made up of a plurality of on-off valves, disposed between the inlet-side shutoff/open part and the fluid controlling
unit, having a total of K inlets and a total of M outlets, and the inlet-side shutoff/open part is divided into a plurality
of groups each having two or more required number of on-off valves, and

wherein the fluid introducing unit comprises a first and a second inlet-side shutoff/open parts respectively made up of N1×2 on-off valves and (N?N1)×2 on-off valves, and a fluid controlling unit-side shutoff/open part made up of 4×M on-off valves.

US Pat. No. 9,119,282

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus, comprising:
a processing chamber having a dielectric window;
a substrate holding unit for holding thereon a processing target substrate within the processing chamber;
a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma
process on the processing target substrate;

an RF antenna provided outside the dielectric window and configured to generate plasma of the processing gas within the processing
chamber by inductive coupling; and

a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency
electric discharge of the processing gas to the RF antenna,

wherein the RF antenna includes an inner coil and an outer coil with a gap therebetween in a radial direction, and the inner
coil and the outer coil are electrically connected in parallel to each other between a first node and a second node on high
frequency transmission lines of the high frequency power supply unit, wherein the intermediate coil is coiled oppositely to
both the inner coil and the outer coil such that

wherein the inner coil and the outer coil are coiled oppositely such that when traveling along each of the inner coil and
the outer coil from the first node to the second node via the high frequency transmission lines, a circumferential traveling
direction along the inner coil from the first node to the second node is opposite to a circumferential traveling direction
along the outer coil from the first node to the second node,

a first capacitor electrically connected in series with one coil of the inner coil and the outer coil is provided between
the first node and the second node,

a direction of current flowing in the inner coil is identical to a direction of a current flowing in the outer coil in a circumferential
direction.

US Pat. No. 9,390,907

FILM FORMING METHOD OF SICN FILM

TOKYO ELECTRON LIMITED, ...

1. A method of forming a SiCN film on a surface to be processed of an object to be processed, the method comprising performing
a cycle which includes:
supplying a Si source gas containing an Si source into a processing chamber having the object to be processed accommodated
therein so as to form a Si film on the object to be processed;

purging the inside of the processing chamber;
supplying a gas containing a nitriding agent into the processing chamber so as to modify the Si film into a SiCN film; and
purging the inside of the processing chamber,
wherein the cycle is repeated until a thickness of the SiCN film reaches a desired thickness, and
wherein a compound of nitrogen and carbon, which is represented by the following Chemical Formula 1, is used as the nitriding
agent:


wherein R1, R2 and R3 are linear or branched alkyl groups having 1 to 8 carbon atoms, which include hydrogen atoms or substituents.

US Pat. No. 9,103,366

BOLT-LOCKING APPARATUS, MOUNTING METHOD THEREOF AND MOUNTING JIG

TOKYO ELECTRON LIMITED, ...

1. A bolt-locking apparatus after a to-be fixed member is fixed using a plurality of bolts, comprising:
a plurality of fitting members which are relatively non-rotatably fitted to heads of the plurality of bolts; and
an engaging member which is mounted on the plurality of fitting members such that the engaging member straddles the fitting
members, the engaging member being engaged with the fitting members,

wherein each of the bolts is a hexagonal socket-head bolt whose head peripheral surface is straightly knurled, the head of
each of the hexagonal socket-head bolts projects from a to-be fixed member and penetrates the to-be fixed member, an outer
peripheral surface of each of the fitting members is square in shape, an inner peripheral surface of the fitting member is
knurled, the fitting member is fitted to the head of each of the hexagonal socket-head bolts which is exposed from the to-be
fixed member, and the engaging member fitted to the plurality of fitting members such that the engaging member straddles the
fitting members is received by the to-be fixed member.

US Pat. No. 9,371,946

PIPE JOINT

Tokyo Electron Limited, ...

1. A pipe joint for preventing a generation of fine particles comprising:
first and second joint members having fluid channels communicating with each other;
a sealing device configured to seal an abutting portion between the both joint members; and
a nut configured to couple the joint members with respect to each other, wherein
the nut is formed with a Co—P alloy metal coating on an inner surface thereof,
wherein a fluorine coating is applied on the surface of the Co—P alloy metal coating;
a thickness of the Co—P alloy metal coating ranges from 0.1 ?m to 10 ?m;
a P content for the Co—P alloy is 3% to 10%;
the fluorine coating is polytetrafluoroethylene; and
a thickness of the fluorine coating ranges from 10 nm to 1 ?m.

US Pat. No. 9,494,180

BOLT-LOCKING APPARATUS, MOUNTING METHOD THEREOF AND MOUNTING JIG

TOKYO ELECTRON LIMITED, ...

1. A mounting method of a bolt-locking apparatus after a to-be fixed member is fixed using a plurality of bolts, the bolt
locking apparatus comprising a plurality of fitting members which are relatively non-rotatably fitted to heads of the plurality
of bolts; and an engaging member which is mounted on the plurality of fitting members such that the engaging member straddles
the fitting members, the engaging member being engaged with the fitting members, wherein a first mounting jig having a holding
portion which holds the outer peripheral surface of the fitting member and a pushing portion which abuts against the fitting
member and which can move with respect to the holding portion is used, the fitting member is mounted on the bolt in a state
where the fitting member is held by the holding portion of the first mounting jig and then, the pushing portion of the first
mounting jig is moved, thereby detaching the fitting member from the holding portion of the first mounting jig.

US Pat. No. 9,277,637

APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT

TOKYO ELECTRON LIMITED, ...

1. An apparatus for plasma treatment comprising:
a process vessel provided with a mounting table for mounting a substrate;
a first gas supplying unit configured to supply a first gas into the process vessel through a first gas inlet;
a first plasma generating unit including a first mechanism configured to generate a first microwave to convert at least a
part of the first gas supplied through the first gas inlet to a first plasma;

a second gas supplying unit configured to supply a second gas into the process vessel through a second gas inlet; and
a second plasma generating unit including a second mechanism configured to generate a second microwave to convert at least
a part of the second gas supplied through the second gas inlet to a second plasma, the second plasma being a plasma separately
generated from the first plasma using the second plasma generating unit,

wherein a height of the second gas inlet from the mounting table is lower than a height of the first gas inlet from the mounting
table,

the first gas inlet is located on an upper side of the process vessel directed toward the substrate in a vertical direction
to diffuse the first plasma generated by the first plasma generating unit in a direction perpendicular to the mounting table,
and

the second gas inlet is located on a side wall of the process vessel directed towards an inner side of the process vessel
in a horizontal direction to diffuse the second plasma generated by the second plasma generating unit in a direction parallel
to the mounting table.

US Pat. No. 9,117,633

PLASMA PROCESSING APPARATUS AND PROCESSING GAS SUPPLY STRUCTURE THEREOF

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus for performing a process on a substrate accommodated in a processing chamber by generating
inductively coupled plasma in the processing chamber, the apparatus comprising:
an upper lid, provided to cover a top opening of the processing chamber, having a dielectric window;
a plurality of gas inlets provided at the upper lid, for supplying a processing gas into the processing chamber;
a high frequency coil positioned above the dielectric window at an outside of the processing chamber;
a gas supply device including a single sheet of plate having through holes, the gas supply device being supported by the upper
lid and provided under the dielectric window; and

an annular member, provided so as to surround the dielectric window and the plate and in contact with a periphery of a lower
surface of the plate, configured to form a plurality of annular gas channels between the plate and the annular member,

wherein a plurality of linear groove-shaped gas paths are formed between the plate and the dielectric window,
end portions of the plurality of the linear groove-shaped gas paths are opened to edges of the through holes and communicate
with the gas inlets,

the gas supply device is configured to supply the processing gas into the processing chamber via the through holes, and
the gas inlets and the plurality of the linear groove-shaped gas paths communicate with each other through the annular gas
channels.

US Pat. No. 9,355,875

LIQUID PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A liquid processing apparatus comprising:
a plurality of liquid processing units, arranged side by side in a horizontal direction, each for performing a liquid process
on a substrate by using a processing solution;

at least one gas exhaust pipe, extended along an arrangement direction of the liquid processing units and provided below the
liquid processing units, for exhausting an atmosphere within each of the liquid processing units;

a plurality of flow control member groups for liquid supply provided below the at least one gas exhaust pipe;
at least one liquid supply main pipe for supplying a processing solution into each of the liquid processing units and at least
one liquid drain main pipe for draining the liquid processing solution from each of the liquid processing units, the at least
one liquid supply main pipe and the at least one liquid drain main pipe being extended along the arrangement direction of
the liquid processing units and provided below the flow control member groups;

a plurality of liquid supply branch pipes that are branched from the at least one liquid supply main pipe into each of the
liquid processing units and connected with the liquid processing units via the flow control member groups for liquid supply;
and

a plurality of liquid drain branch pipes that are branched from the at least one liquid drain main pipe into each of the liquid
processing units and connected with the liquid processing units,

wherein a part of the plurality of flow control member groups is accommodated in a respective housing portion provided below
each of the liquid processing units, and each housing portion is disposed below the at least one gas exhaust pipe,

the at least one liquid supply main pipe and the at least one liquid drain main pipe are accommodated in a pipe box provided
below the each housing portion,

a lateral region along the each housing portion, facing the arrangement of the liquid processing units, is set as a main maintenance
region, and

individual flow control member groups are mounted to respective removable supporting plates that are separately removable
from the each housing portion toward the main maintenance region.

US Pat. No. 9,530,667

METHOD FOR ROUGHNESS IMPROVEMENT AND SELECTIVITY ENHANCEMENT DURING ARC LAYER ETCH USING CARBON

Tokyo Electron Limited, ...

1. A method of dry developing a multi-layer mask on a substrate, comprising:
disposing a substrate comprising a multi-layer mask in a plasma processing system, wherein the multi-layer mask has a patterned
layer defining an open feature pattern overlying a silicon-containing ARC (anti-reflective coating) layer;

establishing a flow of a process gas to the plasma processing system, the process gas containing:
a first gaseous molecular constituent composed of C, F and optionally H,
a second gaseous molecular constituent composed of C, F, and optionally H, the second gaseous molecular constituent having
a different carbon-to-fluorine ratio than the first gaseous molecular constituent, and

a third gaseous molecular constituent composed of C and an element selected from the group consisting of H and F, wherein
the carbon-to-fluorine ratio of the third gaseous molecular constituent is greater than the maximum carbon-to-fluorine ratio
of the first and second gaseous molecular constituents;

selecting a process condition specifying a flow rate for each gaseous molecular constituent that increases an etch selectivity,
measured as the ratio of the etch rate of the silicon-containing ARC layer to the etch rate of the patterned layer, relative
to the etch selectivity achievable using the process condition while introducing only the first and second gaseous molecular
constituents;

igniting plasma from the process gas using a plasma source in accordance with the process condition; and
exposing the substrate to the plasma to extend the open feature pattern of the patterned layer into the silicon-containing
ARC layer.

US Pat. No. 9,453,683

HEAT TREATMENT SYSTEM, HEAT TREATMENT METHOD, AND PROGRAM

TOKYO ELECTRON LIMITED, ...

1. A heat treatment system which forms an impurity-doped polysilicon film on an object, the heat treatment system comprising:
a heating unit which is configured to heat inside of a processing chamber accommodating a plurality of objects;
a plurality of gas supply units which is configured to supply a film-forming gas for forming a polysilicon film and a doping
gas into the processing chamber;

a heat treatment condition storage unit which is configured to store heat treatment conditions, the heat treatment conditions
including a temperature in the processing chamber heated by the heating unit and a flow rate of a film-forming gas and a doping
gas supplied by the gas supply unit;

a model storage unit which is configured to store a model indicating relationships between changes in a temperature in the
process chamber and a flow rate of the doping gas, and a change in a film thickness of the impurity-doped polysilicon film
and an impurity concentration in the impurity-doped polysilicon film;

a heat treatment unit which is configured to control the heating unit to form impurity-doped polysilicon film on the objects
according to the heat treatment conditions stored in the heat treatment condition storage unit;

a calculating unit which is configured to determine whether the film thickness of the impurity-doped polysilicon film formed
by the control of the heat treatment unit and the impurity concentration in the impurity-doped polysilicon film satisfy within
a predetermined range, and when it is determined that the predetermined range is not satisfied, calculate a temperature in
the processing chamber and a flow rate of the doping gas, which satisfy the predetermined range, based on the film thickness
of the impurity-doped polysilicon film, the impurity concentration in the impurity-doped polysilicon film, and the model stored
in the model storage unit; and

an adjusting unit which is configured to adjust heat treatment to satisfy the predetermined range of the impurity-doped polysilicon
film and the impurity concentration in the impurity-doped polysilicon film by changing the temperature in the processing chamber
and the flow rate of the doping gas, which are stored in the heat treatment condition storage unit, respectively to the temperature
in the processing chamber and the flow rate of the doping gas, which are calculated by the calculating unit, and heat-treating
the objects according to the changed heat treatment conditions.

US Pat. No. 9,275,837

PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a processing chamber that performs a plasma process therein;
a first electrode installed within the processing chamber and having therein a heating member;
a second electrode installed within the processing chamber so as to face the first electrode;
a first high frequency power supply electrically connected with the first electrode;
a second high frequency power supply electrically connected with the first electrode or the second electrode; and
a filter that is installed on a power feed line for electrically connecting the heating member with a heater power supply
and simultaneously attenuates or blocks a first high frequency noise and a second high frequency noise entering the power
feed line via the heating member,

wherein the filter includes:
a coil that forms a part of the power feed line, the coil being a central conductor;
a capacitor connected between an output terminal of the heater power supply of the coil and a conductive member of a ground
potential; and

a tube-shaped outer conductor that accommodates or surrounds the coil without accommodating or surrounding the capacitor and
forms a distributed constant line having a constant characteristic impedance in pair with the coil,

further wherein parallel resonance occurs in the distributed constant line at regular multiple resonance frequencies, and
said regular multiple resonance frequencies are determined by a winding length of the coil,

the winding length of the coil is set such that two of the multiple resonance frequencies are equal to or approximate to a
first frequency of the first high frequency noise and a second frequency of the second high frequency noise respectively,
so that the distributed constant line provides impedances obtained at local peaks of an impedance characteristic curve, which
increase due to parallel resonance for the first and second high frequency noises, and

the second frequency is different from the first frequency.

US Pat. No. 9,082,807

LID OPENING AND CLOSING DEVICE

TOKYO ELECTRON LIMITED, ...

1. A lid opening and closing device for a semiconductor manufacturing apparatus which comprises:
a partition wall configured to divide a carrier conveying region and a substrate conveying region, the partition wall having
a conveying gateway with an edge portion;

a carrier including a carrier body and a carrier lid configured to removably engage with the carrier body, the carrier body
having a substrate takeout opening with an edge part, the carrier lid having an opening on the front surface thereof, the
edge part of the substrate takeout opening of the carrier body configured to make contact with the edge portion of the conveying
gateway; and

an opening/closing door configured to open and close the conveying gateway, the opening/closing door including an opposing
surface portion facing the carrier and a lid removal mechanism provided in the opposing surface portion, wherein the lid removal
mechanism is configured to enter the carrier lid, to release engagement of the carrier lid with the carrier body, and to hold
the carrier lid, the lid opening and closing device comprising:

a table configured to mount the carrier thereon with a front surface of the carrier lid configured to face toward the conveying
gateway;

a gas injecting hole provided in the opposing surface portion and configured to supply a purge gas used in removing particles
adhering to the carrier lid;

an advancing/retreating mechanism configured to move the carrier placed on the table toward and away from the opposing surface
portion; and

a control unit configured to output a control signal such that based on the control signal, a purge gas is supplied from the
gas injecting hole to the carrier lid when the carrier is at an effective gas supply position at which a distance between
the opposing surface portion and the carrier lid, which is spaced apart from the opposing surface portion, is 5 mm or less,

wherein the carrier lid is subsequently removed from the carrier when the lid removal mechanism of the opposing surface portion
comes into engagement with the carrier lid.

US Pat. No. 9,477,232

APPARATUS FOR DIVIDING AND SUPPLYING GAS AND METHOD FOR DIVIDING AND SUPPLYING GAS

FUJIKIN INCORPORATED, Os...

1. An apparatus for dividing and supplying gas, the apparatus comprising:
a flow rate control device that controls gas from a gas supply source;
a plurality of divided flow passages that are connected in parallel with each other, wherein gas flowing from the flow rate
control device is divided and supplied to a location where the gas is used via the plurality of divided flow passages;

a plurality of thermal-type mass flow sensors, wherein a thermal-type mass flow sensor is disposed to each of the plurality
of divided flow passages, respectively;

a plurality of electrically-operated valves, wherein an electrically-operated valve is disposed on a downstream side of each
of the plurality of thermal-type mass flow sensors, respectively;

a plurality of controllers, wherein a controller is operably connected to control the opening and the closing of each of the
plurality of electrically-operated valves, respectively; and

a flow ratio setting calculator, wherein the flow ratio setting calculator receives a flow ratio command that is input from
outside and calculates a total flow rate based on flow rates of the plurality of thermal-type mass flow sensors, then calculates
flow rates of the plurality of divided flow passages based on the calculated total flow rate as well as the flow ratio command,
and then inputs the calculated flow rates as set flow rates to each of the plurality of controllers, respectively;

wherein, a first divided flow passage, comprising one of the plurality of divided flow passages with a highest set flow rate,
is maintained in an uncontrolled state with a fixed valve opening degree, wherein the highest set flow rate is entered by
the flow ratio setting calculator, wherein each of the rest of the plurality of divided passages is controlled by driving
the corresponding electrically-operated valve at a fixed speed until a detected flow rate reaches a switching level to feedback
control, and wherein the feedback control of the divided flow rate of each of the rest of the plurality of the divided flow
passages is implemented by each of the controllers.

US Pat. No. 9,280,052

SUBSTRATE TREATMENT METHOD, NON-TRANSITORY COMPUTER STORAGE MEDIUM AND SUBSTRATE TREATMENT SYSTEM

Tokyo Electron Limited, ...

1. A substrate treatment method of forming a resist pattern over a substrate, the method comprising:
a resist film forming step of forming a resist film over a substrate;
an exposure step of exposing the resist film into a predetermined pattern;
a metal treatment step of causing a treatment agent to enter an exposed portion exposed in the exposure step of the resist
film and causing metal to infiltrate the exposed portion via the treatment agent, wherein the treatment agent is alcohol;
and

a resist film removing step of removing an unexposed portion not exposed in the exposure step of the resist film to form a
resist pattern over the substrate,

wherein an infiltration amount of the metal infiltrating the exposed portion in the metal treatment step is controlled by
adjusting at least a time period during which the metal is caused to infiltrate in the metal treatment step, an amount of
solvent in the resist film treated in the metal treatment step, or an exposure amount in the exposure step,

wherein the metal treatment step, the treatment agent is supplied onto the resist film and the treatment agent is caused to
enter the exposed portion, and then a metal-containing agent containing the metal is supplied onto the resist film so as to
cause the metal to infiltrate the exposed portion.

US Pat. No. 9,099,298

SUBSTRATE CLEANING APPARATUS AND SUBSTRATE CLEANING METHOD

TOKYO ELECTRON LIMITED, ...

1. A substrate cleaning apparatus for cleaning a substrate to which cleaning target objects have adhered, comprising:
a cluster spraying unit for spraying the substrate with one or more types of clusters formed of cleaning agent molecules agglomerated
together;

a suction unit for sucking cleaning target objects separated by spraying the clusters of the cleaning agent molecules;
a unit for relatively moving the substrate and the cluster spraying unit along a surface of the substrate to which the cleaning
target objects have adhered;

a suction pump connected to the suction unit;
a container for accommodating the substrate;
a vacuum pump for decreasing a pressure in the container; and
cleaning agent accommodating units which accommodate cleaning agents,
wherein the cluster spraying unit includes supply lines for supplying the cleaning agents from the cleaning agent accommodating
units and a plurality of nozzles for spraying the cleaning agents supplied through the supply lines,

wherein each of the cleaning agent accommodating units is connected to one of the nozzles through one of the supply lines
in a one to one corresponding manner,

wherein the nozzles are installed side by side,
wherein the suction unit includes a suction line connected to the suction pump and a plurality of suction members connected
to the suction pump via the suction line, each of the suction members being provided correspondingly to each of the nozzles,
and

wherein the supply lines are separated from the suction line.

US Pat. No. 9,293,346

METHOD FOR ETCHING ORGANIC FILM AND PLASMA ETCHING DEVICE

TOKYO ELECTRON LIMITED, ...

1. A method for etching an organic film, comprising:
preparing in a processing chamber a target object having an organic film; and
etching the organic film to provide a patterned organic film by supplying a processing gas including COS gas and O2 gas into the processing chamber and supplying a microwave for plasma excitation into the processing chamber, wherein SO radicals
are dissociated from the COS gas and adsorbed on a sidewall of the patterned organic film formed by said etching.

US Pat. No. 9,355,822

PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus of generating plasma of a processing gas in an evacuable processing chamber that accommodates
a substrate to be processed, which is loaded thereinto and unloaded therefrom, and performing a process on the substrate under
the plasma, the plasma processing apparatus comprising:
a switching type high frequency power supply, having a DC power supply and a switching device, configured to convert a DC
power outputted from the DC power supply into a high frequency power by turning on/off the switching device with a switching
pulse at a high frequency;

a high frequency power supply line through which the high frequency power outputted from the high frequency power supply is
applied to the plasma;

a matching device configured to match impedance on a side of the high frequency power supply with load impedance on the high
frequency power supply line;

a high frequency power modulation unit that controls the high frequency power supply to alternately repeat an on-period time
where the high frequency power is in an on state and an off-period time where the high frequency power is in an off state
at a preset pulse frequency; and

a residual high frequency power removing unit configured to remove the high frequency power remaining on the high frequency
power supply line during the off-period time in each cycle of the pulse frequency,

wherein the residual high frequency power removing unit is provided on the high frequency power supply line between the switching
device and the matching device.

US Pat. No. 9,237,638

PLASMA PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a processing chamber, having a top opening, configured to perform therein a plasma process on a processing target substrate;
a gas supply unit configured to supply a plasma processing gas into the processing chamber;
a mounting table that is provided within the processing chamber and is configured to mount the processing target substrate;
a microwave generator configured to generate a microwave for plasma excitation;
a dielectric plate placed for sealing the processing chamber hermetically by covering the top opening of the processing chamber
and configured to transmit the microwave into the processing chamber;

a slot antenna plate, having a plurality of slot holes, provided on the dielectric plate and configured to radiate the microwave
into the dielectric plate;

a wavelength shortening plate provided on the slot antenna plate and configured to propagate the microwave in a radial direction;
and

a microwave supply unit configured to supply the microwave generated by the microwave generator to the slot antenna plate,
wherein the microwave supply unit comprises:
a coaxial waveguide including a substantially circular rod-shaped inner conductor whose one end is connected to a center of
the slot antenna plate and a substantially cylindrical outer conductor provided outside the inner conductor with a gap therebetween
in a radial direction; and

a distance varying device disposed proximate an upper surface of the wavelength shortening plate and configured to vary a
distance between a part of an outer surface of the inner conductor and a facing member facing the part of the outer surface
of the inner conductor in a radial direction,

wherein the distance varying device includes at least one stub member extensible from the outer conductor toward the inner
conductor in an obliquely downward direction so that a leading end of the stub member is extended to be closer than a trailing
end of the stub member, to the wavelength shortening plate.

US Pat. No. 9,117,764

ETCHING METHOD, SUBSTRATE PROCESSING METHOD, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR ELEMENT

TOKYO ELECTRON LIMITED, ...

1. A substrate processing method, comprising:
a hard mask layer forming process in which a hard mask layer is formed on a to-be-processed substrate;
a fluorocarbon layer forming process in which a fluorocarbon (CFx: x is a random number) layer patterned into a predetermined
shape is formed on the mask layer after the hard mask layer forming process;

a silicon containing film forming process in which a silicon containing film is formed to cover the formed fluorocarbon layer
and the hard mask layer exposed between the fluorocarbon layers, after the fluorocarbon layer forming process;

a silicon containing film etching process (etch back process) in which an etching is performed to remove the silicon containing
film located on the top side of the hard mask layer and on the top side of the fluorocarbon layer while leaving the silicon
containing film located on a side wall side of the fluorocarbon layer after the silicon containing film forming process;

a fluorocarbon layer etching process in which an etching is performed to remove the fluorocarbon layer located between the
side walls after the silicon containing film etching process;

a hard mask layer etching process in which the hard mask is etched using the remaining silicon containing film as a mask after
fluorocarbon layer etching process; and

a to-be-processed substrate etching process in which the to-be-processed substrate is etched using the remaining hard mask
as a mask after the hard mask etching process.

US Pat. No. 9,472,454

TUNGSTEN FILM FORMING METHOD

TOKYO ELECTRON LIMITED, ...

1. A tungsten film forming method comprising:
providing a substrate having a recess in a processing chamber;
forming a first tungsten film on the substrate to fill the recess with a tungsten by simultaneously or alternately supplying
WCl6 gas as a tungsten source and a reducing gas under a depressurized atmosphere of the processing chamber, and by reacting the
WCl6 gas with the reducing gas while heating the substrate;

forming an opening in the tungsten filled in the recess by supplying WCl6 gas into the processing chamber and etching an upper portion of the tungsten without using a plasma; and

forming a second tungsten film on the substrate having the opening by simultaneously or alternately supplying the WCl6 gas and the reducing gas into the processing chamber, and by reacting the WCl6 gas with the reducing gas while heating the substrate.

US Pat. No. 9,404,180

DEPOSITION DEVICE

Tokyo Electron Limited, ...

1. A deposition device comprising:
a processing container configured to accommodate a workpiece and be vacuum exhaustible in order to form a thin film on a surface
of the workpiece using a source gas including an organometallic compound;

a mounting platform accommodated in the processing container and configured to mount the workpiece, the mounting platform
being equipped with a heater for heating the workpiece;

a gas introduction mechanism including a baffle plate disposed above the mounting platform to be opposed thereto and configured
to introduce the source gas toward an area further outside than an outer peripheral end of the workpiece on the mounting platform;

an internal partition wall that surrounds a processing space above the mounting platform to form a boundary for the processing
space and installed such that a lower end portion of the internal partition wall comes close to the mounting platform to form
a gas outlet between the lower end portion of the internal partition wall and a peripheral edge of a top surface of the mounting
platform; and

an orifice forming member installed on the lower end portion of the internal partition wall surrounding the processing space
to extend toward a central portion of the processing space to form an orifice communicating with the gas outlet between the
internal partition wall and the peripheral edge of the top surface of the mounting platform.

US Pat. No. 9,330,891

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method comprising:
attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container
and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic
chuck;

adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when
the workpiece is carried into the processing container;

processing the workpiece with plasma; and
separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the
N-containing material.

US Pat. No. 9,297,072

FILM DEPOSITION APPARATUS

Tokyo Electron Limited, ...

1. A film deposition apparatus for forming a thin film on a surface of a wafer by use of reactant gases, comprising:
a rotary table including a substrate placement area in which a substrate is placed;
a vacuum container including a container configured to accommodate the rotary table and a top panel having a circle shape
and configured to hermetically seal a top of the container;

an open-and-close mechanism having lifting shafts provided at equal intervals along a perimeter of the circle shape of the
top panel and extending from the open-and-close mechanism to open and close the top panel, said lifting shafts being connected
to a top surface of the top panel;

a plurality of reactant gas nozzles disposed so as to be supported by an outer lateral wall of the vacuum container to be
situated at different angular positions with respect to a rotation center of the rotary table to face areas in which the substrate
placement area passes, the plurality of reactant gas nozzles having gas discharge ports arranged in radial directions with
respect to the rotation center to supply respective reactant gases to a surface of the wafer thereby to form respective process
areas;

a sleeve provided at the vacuum container so as to penetrate through the outer lateral wall of the vacuum container;
an inner sleeve located in the sleeve, one end of each of the plurality of reactant gas nozzles being inserted into the sleeve
and the inner sleeve,

o-rings provided in the sleeve so as to sandwich the inner sleeve;
a discharge gas supply unit situated at an angular position between the process areas to supply purge gas to form an isolation
area that isolates atmospheres of the process areas from each other; and

an exhaustion unit configured to exhaust atmosphere inside the vacuum container.

US Pat. No. 9,852,892

MICROWAVE SUPPLY APPARATUS, PLASMA PROCESSING APPARATUS, AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A microwave supply apparatus for supplying a microwave for generation of plasma, the apparatus comprising:
a waveguide including a first end and a second end, and extending between the first end and the second end;
a circulator including a first port, a second port coupled to the first end, and a third port coupled to the second end, the
circulator being configured to propagate the microwave coming from an input end of the microwave supply apparatus, from the
first port to the second port, and return the microwave received at the third port, from the first port to a side of the input
end; and

a matcher provided between the input end and the first port of the circulator, the matcher being configured to reflect a part
of the microwave returned from the first port to the side of the input end, to the first port of the circulator,

wherein the waveguide includes a rectangular waveguide, the rectangular waveguide including a first wall and a second wall
that face each other, and a third wall and a fourth wall that intersect with the first wall and the second wall and face each
other,

wherein a slot hole extending along a propagation direction of the microwave in the waveguide is formed in the first wall,
and the slot hole is provided in a region deviated to a side of the third wall,

wherein the waveguide includes a first ridge portion provided in the waveguide, and
wherein the first ridge portion has a rectangular parallelepiped shape, is separated from the first wall, faces the slot hole,
is in contact with the second wall and the third wall, and is separated from the fourth wall.

US Pat. No. 9,425,071

FILM FORMING METHOD

TOKYO ELECTRON LIMITED, ...

4. A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in
a vacuum atmosphere, the method comprising performing a cycle a plurality of times, the cycle including:
supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate;
forming an ozone atmosphere containing ozone having a concentration (Vol %) not less than that where a chain decomposition
reaction is caused in the vacuum vessel; and

forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing
the source adsorbed onto the surface of the substrate by the active species to obtain the oxide,

wherein oxidizing the source comprises supplying a reaction gas for causing the forcible decomposition by chemically reacting
with the ozone to the ozone atmosphere, and

wherein supplying the reaction gas comprises supplying the reaction gas into the vacuum vessel from a supply port which is
formed in the vacuum vessel and opposite to the substrate.

US Pat. No. 9,187,822

METHOD FOR FORMING GE-SB-TE FILM AND STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A method of forming a Ge—Sb—Te film formed of Ge2Sb2Te5 on a substrate by CVD by disposing the substrate in a process chamber and using a gaseous Ge material, a gaseous Sb material,
and a gaseous Te material, the method comprising:
introducing the gaseous Ge material and the gaseous Sb material, or a small amount of the gaseous Te material not sufficient
to form Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material into the process chamber so that a precursor film which
does not contain Te or contains Te in an amount smaller than that in Ge2Sb2Te5 is formed on the substrate;

after forming the precursor film, introducing the gaseous Ge material into the process chamber to cause Ge to be adsorbed
to the precursor film; and

after Ge is adsorbed to the precursor film by introducing the gaseous Ge material into the process chamber, introducing the
gaseous Te material into the process chamber to cause Te to be adsorbed to the precursor film so that the concentration of
Te in the precursor film is adjusted,

wherein when forming the precursor film, the gaseous Ge material and the gaseous Sb material or the small amount of the gaseous
Te material not sufficient to form Ge2Sb2Te5 in addition to the gaseous Ge material and the gaseous Sb material are supplied in a lump, and

wherein the precursor film contains Ge in an amount smaller than that in Ge2Sb2Te5.

US Pat. No. 9,130,536

RADIO FREQUENCY SIGNAL SPLITTER AND MATCHER

TOKYO ELECTRON LIMITED, ...

1. A radio frequency (RF) power splitter, comprising:
a conductive element configured to transmit alternating current in a standing wave that comprises a low voltage point near
a center portion of the conductive element, the conductive element being configured to generate a magnetic field that extends
around an axis of the conductive element when the alternating current is received from a RF generator;

an inductor that is physically separate from the conductive element and adjacent to the low voltage point and is configured
to receive the magnetic field that is generated by the conductive element, the inductor comprising:

a first end configured to transmit current based, at least in part, on the inductor receiving the magnetic field;
a second end configured to transmit current based, at least in part, on the inductor receiving the magnetic field, the current
from the second end being out of phase from the current configured to be transmitted from the first end;

a first current output configured to be coupled to a first antenna within a plasma process chamber and to the first end of
the inductor; and

a second current output configured to be coupled to a second antenna within the plasma process chamber and to the second end
of the inductor.

US Pat. No. 9,460,913

FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM

TOKYO ELECTRON LIMITED, ...

1. A film-forming method of forming a silicon oxide film, the film-forming method comprising:
forming a tungsten film or a tungsten oxide film on a surface of a silicon wafer, the tungsten film or the tungsten oxide
film having a first exposed surface and the silicon wafer having a second exposed surface after forming the tungsten film
or the tungsten oxide film;

heating the first exposed surface and the second exposed surface;
forming a seed layer both on the first exposed surface and on the second exposed surface by supplying an aminosilane-based
gas simultaneously both on the heated first exposed surface and on the heated second exposed surface, the seed layer being
a silicon layer; and

forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a
gas including an oxidizing agent for oxidizing silicon on the seed layer.

US Pat. No. 9,080,238

RAW MATERIAL SUPPLYING DEVICE AND FILM FORMING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A raw material supplying device for vaporizing liquid raw material contained in a repository using a vaporizer, and supplying
vaporized gas into a reaction container for semiconductor manufacture, comprising:
a raw material supplying pipe including a vertically extending rising pipe having an upper end and a lower end to which a
vaporizer and a repository are connected respectively;

a first raw material discharging pipe which is provided to branch from the lower end of the rising pipe;
a cleaning fluid supplying pipe which is connected to the upper end of the rising pipe and supplies one of purge gas and cleaning
solution in order to extrude and discharge liquid raw material in the raw material supplying pipe to the first raw material
discharging pipe;

a first raw material supplying valve and a first raw material discharging valve which are respectively provided in a side
of the repository and the first raw material discharging pipe other than a connection portion of the raw material supplying
pipe with the first raw material discharging pipe; and

a cleaning fluid supplying valve which is provided in the cleaning fluid supplying pipe,
wherein, when the liquid raw material is supplied into the vaporizer, the first raw material supplying valve is opened and
the first raw material discharging valve and the cleaning fluid supplying valve are closed, and when the liquid raw material
is discharged, the first raw material supplying valve is closed and the first raw material discharging valve and the cleaning
fluid supplying valve are opened.

US Pat. No. 9,214,365

TWO-FLUID NOZZLE AND SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A two-fluid nozzle for spraying, toward a processing target object, droplets of a processing solution which are formed
by mixing the processing solution discharged from a liquid discharge portion and a gas discharged from a ring-shaped gas discharge
opening formed on a lower surface of the two-fluid nozzle,
wherein the liquid discharge portion includes a plurality of spaced liquid discharge openings arranged along a circle inside
the ring-shaped gas discharge opening,

the plurality of spaced liquid discharge openings are inclined relative to the lower surface and are fluidly coupled to a
liquid inlet opening, each of the plurality of spaced liquid discharge openings being configured to obliquely discharge the
processing solution in an outward direction toward the ring-shaped gas discharge opening,

a distance between adjacent liquid discharge openings among the plurality of the liquid discharge openings is set to be a
distance allowing processing solutions discharged from the respective liquid discharge openings not to contact each other
in a region under the liquid discharge portion until the processing solution discharged from the respective liquid discharge
openings collide with the gas,

a distance between each of the liquid discharge openings and the ring-shaped gas discharge opening is set to be a distance
allowing processing solutions discharged from adjacent liquid discharge openings to be mixed with the gas while not being
contacted with each other,

the ring-shaped gas discharge opening is configured to discharge the gas in a downward direction, and
the liquid discharge openings and the ring-shaped gas discharge opening are positioned on the lower surface of the two-fluid
nozzle facing the processing target object, such that the droplets of the processing solution are formed outside of the two-fluid
nozzle.

US Pat. No. 9,171,736

SPACER MATERIAL MODIFICATION TO IMPROVE K-VALUE AND ETCH PROPERTIES

Tokyo Electron Limited, ...

1. A method for performing a spacer etch process utilizing a post deposition treatment, the method comprising:
conformally applying a spacer material over a gate structure on a substrate, the spacer material having an initial K-value;
treating an exposed surface of said spacer material to an oxygen-containing plasma environment to form a spacer oxidation
layer; and

performing one or more spacer etch process sequences to partially remove said spacer oxidation layer and spacer material from
said gate structure and said substrate, while retaining a sidewall spacer positioned along a sidewall of said gate structure
resulting in a bi-layer spacer with the spacer oxidation layer on the outer side of the spacer yielding a spacer with a final
K-value; and

controlling spacer etch variables in order to achieve a target difference of initial K-value to final K-value of the spacer;
wherein the spacer material comprises silicon nitride (SixNz), silicon carbide (SixCy), or silicon carbonitride (SixCyNz); or silicon oxycarbonnitride (SixOCyNz) and wherein the difference between the initial K-value and the final K-value is 5 to 10% of the initial K-value; and
wherein the spacer material conformally applied over the gate structure has a thickness less than or equal to 10 nanometers
(nm), the oxygen-containing environment contains an oxygen-containing plasma, the oxygen-containing plasma comprises O, O2, O3, CO, CO2, NO, N2O, or NO2, or any combination of two or more thereof, and the oxygen containing plasma has a flow rate of 300 to 400 sccm.

US Pat. No. 9,151,286

PROCESSING CHAMBER INTEGRATED PRESSURE CONTROL

Tokyo Electron Limited, ...

1. A semiconductor fabrication apparatus with integrated processing chamber pressure control, comprising:
a substrate processing chamber configured to perform one or more processes in semiconductor fabrication; and
an integrated pumping system concentrically mounted within the substrate processing chamber and movable axially within the
substrate processing chamber, wherein the pumping system comprises:

a turbo pump suspended inside the substrate processing chamber, the turbo pump having a hollow central shaft and one or more
stages, each of the one or more stages having stator vanes fixed relative to the pumping system and compressor vanes rotatable
about a central axis of the stator vanes, and

a pressure control system coupled to the turbo pump and configured to adjust the pressure within the substrate processing
chamber by changing the relative motion or position of the turbo pump or a component thereof relative to the substrate processing
chamber.

US Pat. No. 9,524,847

SUBSTRATE PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A substrate processing apparatus comprising:
an accommodating chamber which accommodates the substrate;
a lower electrode which is disposed inside the accommodating chamber and on which the substrate is held;
an upper electrode which faces the lower electrode, wherein a dielectric is buried in at least a portion of the upper electrode,
and one of the upper electrode and the lower electrode is moveable with respect to the other;

a high frequency power source which is connected to the lower electrode;
a processing space between the upper electrode and the lower electrode;
a ground which is electrically connected to the upper electrode, and
a controller which is configured to control the one of the upper electrode and the lower electrode to move with respect to
the other, and to control the substrate processing apparatus to perform a first process on the substrate while an interval
between the upper electrode and the lower electrode is maintained to a first distance and to perform a second process on the
substrate while the interval is maintained to a second distance, wherein an etching rate when the interval is the first distance
and an etching rate when the interval is the second distance are different to each other since, by the dielectric buried in
at least a portion of the upper electrode, a potential difference between plasma generated in the processing space and the
ground is divided into a potential difference between the plasma and the dielectric and a potential difference between the
dielectric and the ground.

US Pat. No. 9,355,861

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking
a first film having a first dielectric constant and a second film having a second dielectric constant different from the first
dielectric constant, and further having a photoresist layer provided on the multilayer film and functioning as an etching
mask to form a step-shaped structure, the method comprising:
a first step of plasma-etching the first film by using the photoresist layer as a mask;
a second step of removing deposits adhered to the photoresist layer from the plasma etching after the first step;
a third step of exposing, after the second step, the photoresist layer formed on the substrate to a plasma by using a plasma
processing apparatus which includes an upper electrode having at least a silicon member and further includes a lower electrode,
which is disposed opposite to the upper electrode, for mounting thereon the substrate, the plasma being generated from a processing
gas containing argon gas and hydrogen gas by applying a high frequency power to the lower electrode while applying a negative
DC voltage to the upper electrode;

a fourth step of trimming the photoresist layer after the third step; and
a fifth step of plasma-etching the second film by using the photoresist layer trimmed in the fourth step and the first film
plasma-etched in the first step as an etching mask,

wherein the multilayer film is formed to have a step-shaped structure by repeatedly performing the first step to the fifth
step.

US Pat. No. 9,305,767

LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A liquid processing apparatus that performs a liquid process by supplying a processing solution to a surface of a target
substrate, the liquid processing apparatus comprising:
a housing in which the liquid process is performed;
a rotation unit configured to hold the target substrate within the housing and rotate the target substrate around a vertical
axis;

a processing solution supply nozzle configured to supply the processing solution to the surface of the target substrate being
held and rotated by the rotation unit;

a cup provided around the rotation unit;
a first gas supply unit, provided to face the target substrate held by the rotation unit, configured to form a downward flow
of a first gas that flows over the entire surface of the target substrate and is introduced into the cup in order to form
a processing atmosphere on the surface of the target substrate;

a second gas supply unit configured to form a downward flow of a second gas different from the first gas in a region outside
the downward flow of the first gas; and

a controller configured to control rotation speed of the target substrate and a flow rate of the first gas supplied from the
first gas supply unit to form a trumpet-shaped flow of the first gas, such that the entire surface of the target substrate
is covered with the first gas and the second gas is supplied so that the second gas is suppressed from being introduced into
the trumpet-shaped flow of the first gas,

wherein the first gas supply unit and the second gas supply unit are provided at a ceiling portion of the housing.

US Pat. No. 9,146,479

SUBSTRATE REFERENCE IMAGE CREATION METHOD, SUBSTRATE DEFECT INSPECTION METHOD, SUBSTRATE REFERENCE IMAGE CREATION APPARATUS, SUBSTRATE DEFECT INSPECTION UNIT AND NON-TRANSITORY COMPUTER STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A method of picking up images of substrates and creating a substrate image being a defect inspection reference on a basis
of a plurality of the picked-up substrate images, comprising:
a component decomposition step of decomposing a planar distribution of pixel values in the picked-up substrate image into
a plurality of pixel value distribution components through use of a Zernike polynomial for each of the substrate images;

a Zernike coefficient calculation step of calculating Zernike coefficients of the pixel value distribution components decomposed
through use of the Zernike polynomial;

a Zernike coefficient extraction step of extracting, for every Zernike coefficients having a same couple of degrees, from
the calculated Zernike coefficients,

(1) a median value, and
(2) values deviated from the median value by a predetermined value or more;
an image specification step of specifying substrate images having the extracted values; and
an image creation step of creating a substrate image being a defect inspection reference by combining the specified substrate
images.

US Pat. No. 9,117,769

PLASMA ETCHING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma etching method comprising:
providing a substrate on which an amorphous carbon layer and an inorganic film are formed;
generating a plasma of only O2 gas in a processing chamber; and

performing a plasma etching on the amorphous carbon layer by using the inorganic film as a mask and by using the plasma of
only the O2 gas,

wherein the plasma etching is performed while causing the O2 gas to flow in the processing chamber with a residence time ranging from 1.02 msec to 3.05 msec,

wherein the plasma etching is performed at a pressure inside the processing chamber set to be greater than zero and equal
to or smaller than 30 mTorr, and

wherein the plasma etching is performed at a flow rate of the O2 gas ranging from 450 sccm to 1350 sccm.

US Pat. No. 9,228,261

SYSTEM AND METHOD FOR TISSUE CONSTRUCTION USING AN ELECTRIC FIELD APPLICATOR

Tokyo Electron Limited, ...

20. A method of building a tissue from cells, comprising:
supplying a processing medium via a processing chamber having a first end with a substrate positioned in the first end and
upon which tissue is to be built, wherein the processing medium is supplied through a fluid delivery system to a processing
region of the processing chamber;

supplying cells and fluids through the fluid delivery system to the processing region to be used in building the tissue;
applying a first electrical bias to at least one electric field applicator disposed proximate to the substrate by a distributing
bias unit to generate a first electric field, the first electric field being configured to controllably select, transport,
orient, arrange, or manipulate cells in the processing region to build the tissue on the substrate;

positioning the at least one electric field applicator with respect to the substrate by a manipulator;
providing electric power to the distributing bias with at least one power supply; and
controlling the at least one electric field applicator, manipulator, and the at least one power supply with a control system.

US Pat. No. 9,159,575

METHOD FOR ETCHING HIGH-K DIELECTRIC USING PULSED BIAS POWER

Tokyo Electron Limited, ...

20. A method of pattern etching a high-k layer on a substrate, comprising:
disposing a substrate in a plasma processing system; and
transferring a pattern to said high-k layer on said substrate using a pulsed bias plasma etching process, said pulsed bias
plasma etching process comprising:

introducing a process gas composition to said plasma processing system, said process composition including a halogen-containing
etching compound and a hydrocarbon passivation compound selected from the group consisting of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12,

igniting plasma using a surface wave plasma source,
electrically biasing a substrate holder that supports said substrate with radio frequency (RF) power, and
pulsing said RF power for said electrical biasing, wherein said hydrocarbon passivation compound is pulsed into said plasma
processing system during said pulsing said RF power while said halogen-containing etching compound is continuously flowed,
and decreasing a RF power level for said pulsing said RF power during said electrically biasing before said pattern is transferred
fully through said high-k layer.

US Pat. No. 9,378,940

SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

Tokyo Electron Limited, ...

1. A substrate processing apparatus comprising:
a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface
of an underlying layer;

a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate;
a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate
held by the substrate holding unit in a mixing ratio and at a temperature that does not damage the underlying layer while
removing the target layer;

an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage
the underlying layer when the mixed liquid and the OH-group are mixed on the substrate, while supplying the mixed liquid of
sulfuric acid and hydrogen peroxide to the substrate; and

a controller configured to control operation of the substrate processing apparatus, wherein the controller is configured to
control flow rates of sulfuric acid and hydrogen peroxide, wherein the controller is configured to control the OH-group supplying
unit such that the controller controls a flow rate of fluid containing OH-group supplied to the substrate, and

wherein the controller is programmed such that the amount of the fluid containing OH-group supplied to the substrate is decreased
while continuing the supply of the mixed liquid of sulfuric acid and hydrogen peroxide to the substrate, and

as the processing progresses and less of the target substrate is removed, the reduction of the supply of the fluid containing
OH-group results in less heat being generated and allows removal of the remnants of the target substrate while reducing the
risk of damage to the underlying layer.

US Pat. No. 9,290,391

SILICON COMPONENT FOR PLASMA ETCHING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A silicon electrode plate in a processing chamber of a plasma etching apparatus, comprising:
silicon wastes an amount of which is determined based on a content of impurity in the silicon wastes and a target value of
an electrical resistance of the silicon electrode plate;

a silicon source material an amount of which is determined based on the content of impurity in the silicon wastes and the
target value of the electrical resistance of the silicon electrode plate; and

impurity an amount of which is determined based on the content of impurity in the silicon wastes and the target value of the
electrical resistance of the silicon electrode plate,

wherein the target value of the electrical resistance of the silicon electrode plate is about 75 ?.

US Pat. No. 9,105,586

ETCHING OF SILICON OXIDE FILM

TOKYO ELECTRON LIMITED, ...

1. An etching system for processing a target object prepared such that a first oxide film made of silicon oxide containing
at least one of B and P is formed on a substrate, a second oxide film made of silicon oxide containing neither of B and P
is formed on the first oxide film, and a contact portion is present below an interface between the first oxide film and the
second oxide film, the etching system comprising:
a first etching apparatus configured to etch the second oxide film and the first oxide film by plasma etching;
a second etching apparatus configured to etch the first oxide film by plasma-less etching using HF gas and an inactive gas,
the second etching apparatus including an etching unit configured to perform the plasma-less etching under a vacuum pressure
and a heat processing unit configured to perform a heat process to the target object under a vacuum pressure to remove a fluosilicate
family reaction product;

a transfer mechanism configured to transfer the target object between the first etching apparatus and the second etching apparatus;
and

a control section configured to control operation of the etching system, the control section including a computer and a computer
readable non-transitory storage medium that stores a control program, wherein the control program, when executed, causes the
computer to control the etching system to conduct an etching sequence which includes

etching the second oxide film and the first oxide film, thereby forming a hole reaching the contact portion, by the plasma
etching in the first etching apparatus,

then transferring the target object from the first etching apparatus to the second etching apparatus, by use of the transfer
mechanism,

then etching the first oxide film in preference to the second oxide film by the plasma-less etching using the HF gas and the
inactive gas under a vacuum pressure, thereby expanding a first portion of the hole adjacent to an upper side of the contact
portion and inside the first oxide film such that the first portion becomes larger in width than a second portion of the hole
inside the second oxide film, in the etching unit of the second etching apparatus, and

then performing the heat process to the target object under a vacuum pressure to remove a fluosilicate family reaction product
generated by the plasma-less etching, in the heat processing unit of the second etching apparatus.

US Pat. No. 9,048,191

PLASMA ETCHING METHOD

Tokyo Electron Limited, ...

1. A plasma etching method that involves supplying an etching gas containing an oxygen gas and a sulfur fluoride gas at a
predetermined flow rate into a processing chamber that accommodates a processing substrate, which includes a silicon layer
and a resist layer that is arranged into a predetermined pattern on the silicon layer, and etching the silicon layer with
plasma generated from the etching gas supplied to the processing chamber using the resist layer as a mask, the method comprising:
a first step of etching the silicon layer while a flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to a
first flow ratio;

a second step of etching the silicon layer while decreasing a flow rate of the oxygen gas to decrease the flow ratio of the
oxygen gas to the sulfur fluoride gas to a second flow ratio, which is lower than the first flow ratio; and

a third step of etching the silicon layer while the flow ratio of the oxygen gas to the sulfur fluoride gas is adjusted to
the second flow ratio,

wherein
the silicon layer is etched while a first power having a first frequency is supplied to a support part that supports the processing
substrate within the processing chamber; and

the first step further includes
a fourth step of etching the silicon layer while the first power and a second power having a second frequency, which is lower
than the first frequency, are supplied to the support part; and

a fifth step, to be performed after the fourth step, including stopping the supply of the second power to the support part,
and etching the silicon layer while the first power is supplied to the support part.

US Pat. No. 9,576,829

PROCESS LIQUID SUPPLY APPARATUS OPERATING METHOD, PROCESS LIQUID SUPPLY APPARATUS AND NON-TRANSITORY STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A method of operating a process liquid supply apparatus, the process liquid supply apparatus including a filter unit, a
discharge outlet for a gas in a process liquid, and a liquid sending unit which are provided in a flow passage located between
a process liquid supply source and a nozzle in that order from an upstream side, the process liquid supply apparatus supplying
the process liquid to target objects through the nozzle by the liquid sending unit, the method comprising:
filling the filter unit with the process liquid from an upstream side of the filter unit to a downstream side of the filter
unit after newly mounting or replacing the filter unit; and

repeating a depressurization filtering process and a pressurization filtering process for a predetermined number of times,
the depressurization filtering process depressurizing the process liquid in the downstream side of the filter unit and thereby
allowing the process liquid to permeate through the filter unit, the pressurization filtering process pressurizing the process
liquid from the upstream side of the filter unit and thereby allowing the process liquid to permeate through the filter unit.

US Pat. No. 9,355,871

SUBSTRATE LIQUID PROCESSING APPARATUS FOR SEPARATING PROCESSING SOLUTION AND ATMOSPHERE FROM EACH OTHER WITHIN COLLECTION CUP

TOKYO ELECTRON LIMITED, ...

1. A substrate liquid processing apparatus configured to perform a liquid process on a substrate with a processing solution,
the substrate liquid processing apparatus comprising:
a substrate rotation unit configured to hold and rotate a substrate within a processing space;
a processing solution supply unit configured to selectively supply plural kinds of processing solutions to the substrate;
a collection cup configured to collect the processing solutions supplied to the substrate;
a plurality of liquid collection regions formed at the collection cup and configured to collect the processing solutions;
at least one liquid drain opening formed at a bottom portion of the collection cup and configured to discharge the processing
solutions collected in the liquid collection regions;

at least one exhaust opening formed above the at least one liquid drain opening of the collection cup;
at least one fixed cover fixed to the collection cup and configured to cover an upper portion of the at least one exhaust
opening with a predetermined space therebetween, such that the at least one exhaust opening is entirely covered by the at
least one fixed cover when viewed from above;

at least one elevating cup provided above the at least one fixed cover and configured to guide the processing solutions supplied
to the substrate into the liquid collection regions; and

at least one cup elevating unit configured to move up and down the at least one elevating cup with respect to the at least
one fixed cover depending on the kinds of the processing solutions,

wherein the at least one fixed cover is includes at least one supporting protrusion at a top portion thereof,
the at least one elevating cup includes at least one supporting recess at a bottom portion thereof, and
the at least one supporting protrusion of the at least one fixed cover is configured to be inserted into the at least one
supporting recess of the at least one elevating cup, and

the predetermined space between the at least one fixed cover and the at least one exhaust opening is maintained constant when
the at least one elevating cup moves up and down.

US Pat. No. 9,257,301

METHOD OF ETCHING SILICON OXIDE FILM

TOKYO ELECTRON LIMITED, ...

1. A method of etching, comprising:
forming a dual-layered mask by sequentially laminating a first film and a second film on a silicon oxide film formed on a
substrate;

exposing the substrate including the silicon oxide film and the dual-layered mask formed on the silicon oxide film to plasma
of a processing gas to etch the silicon oxide film via the dual-layered mask to form a hole through the silicon oxide film,

wherein the second film of the dual-layered mask is constituted by a film having an etching rate lower than that of the first
film of the dual-layered mask with respect to active species in the plasma.

US Pat. No. 9,209,010

SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING DEVICE

TOKYO ELECTRON LIMITED, ...

1. A substrate cleaning method comprising:
forming a cluster including gas molecules by spraying, toward a substrate to which a foreign material is attached and which
is disposed in a low pressure atmosphere, a high pressure gas having a pressure higher than that of the low pressure atmosphere
by using a gas spraying unit which includes a base portion and a cooling unit which extends from an end portion of the base
portion;

allowing the cluster to collide with the substrate without being ionized to thereby remove the foreign material from the substrate;
and

maintaining a temperature of the cooling unit to be lower than that of the substrate to thereby capture the removed foreign
material by the cooling unit.

US Pat. No. 9,204,500

MICROWAVE HEATING APPARATUS AND PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A microwave heating apparatus comprising:
a processing chamber configured to accommodate a target object to be processed, the processing chamber having therein a microwave
irradiation space; and

a microwave introducing unit including four microwave sources that generate microwaves for heating the target object,
wherein the processing chamber includes a top wall, a bottom wall, and four sidewalls connected to one another;
the top wall has four microwave introduction ports;
through each of the four microwave introduction ports the microwaves generated by a corresponding microwave source of the
four microwave sources are introduced into the processing chamber;

each of the four microwave introduction ports is of a substantially rectangular shape having long sides and short sides in
a plan view;

the four microwave introduction ports are arranged in such a way that the long sides and the short sides thereof are parallel
to inner surfaces of the four sidewalls;

the four microwave introduction ports are circumferentially disposed at positions spaced apart from each other by angles of
about 90°;

each one of the four microwave introduction ports has, from among the four microwave introduction ports, a corresponding microwave
introduction port whose long sides are parallel to the long sides of said one of the four microwave introduction ports; and

said one of the four microwave introduction ports is spaced apart from its corresponding microwave introduction port in a
longitudinal direction that is parallel to the long sides of said one of the four microwave introduction ports, so as to not
overlap any portion of its corresponding microwave introduction port in said longitudinal direction.

US Pat. No. 9,165,785

REDUCING BOWING BIAS IN ETCHING AN OXIDE LAYER

TOKYO ELECTRON LIMITED, ...

1. A method for etching features on a semiconductor substrate, the method comprising:
disposing a substrate on a substrate holder in a plasma processing system, the substrate having a mask pattern defining openings
that expose underlying layers through which one or more features are to be etched, the underlying layers including an oxide
layer;

performing a first etching process that etches through a first portion of the oxide layer using a first process gas chemistry,
the first etching process also depositing a first passivation layer on sidewalls created by the first etching process in the
first portion of the oxide layer, the first passivation layer having a first thickness;

performing a second etching process that etches through a second portion of the oxide layer using a second process gas chemistry,
the second etching process depositing a second passivation layer on sidewalls created by the second etching process in the
second portion of the oxide layer, and wherein the second etching process includes forming the second passivation layer to
have a second thickness that is different than the first thickness;

wherein the underlying layers include a polysilicon layer under the oxide layer, and wherein the method further comprises
performing a third etching process that etches through the polysilicon layer, wherein the third etching process includes etching
with a third process gas chemistry that simultaneously includes both nitrogen and argon.

US Pat. No. 9,378,975

ETCHING METHOD TO FORM SPACERS HAVING MULTIPLE FILM LAYERS

TOKYO ELECTRON LIMITED, ...

1. A method of forming a spacer, the method comprising:
positioning a substrate on a substrate holder in a plasma processing chamber, the substrate having a silicon nitride film
covering structures on the substrate and a low-k film covering the silicon nitride film, the silicon nitride film and the
low-k film substantially conforming to geometry of structures on the substrate;

executing an anisotropic etch process that etches a portion of the low-k film using plasma products from a halogen-containing
process gas mixture such that the low-k film is removed from first structures while remaining on second structures that are
taller than the first structures, executing the anisotropic etch process deposits a CFy-based polymer on exposed silicon nitride
surfaces; and

executing an isotropic etch process that etches silicon nitride using plasma products from an oxygen-based process gas.

US Pat. No. 9,370,875

IMPRINTING METHOD

TOKYO ELECTRON LIMITED, ...

1. An imprinting method comprising:
a pressing process for pressing a molding material having thereon a pattern against a target material to be molded to form
an inverted pattern of the molding material on the target material;

a transferring process for transferring the inverted pattern of the molding material to the target material by curing the
target material by heating or irradiating light; and

a separating process for separating the molding material from the target material after the target material is cured through
the transferring process,

wherein the separating process includes:
a pulling process for pulling the molding material away from the target material in a direction opposite to a direction in
which the target material is pressed; and

a pushing process for pushing the target material in the same direction as a direction in which the molding material presses
the target material, and

wherein the pressing process is performed in an atmosphere of a gas that is condensed under a temperature and a pressure obtained
when the target material fills in a recess of the molding material.

US Pat. No. 9,368,384

SUBSTRATE CONVEYING METHOD, RECORDING MEDIUM IN WHICH PROGRAM IS RECORDED FOR CAUSING SUBSTRATE CONVEYING METHOD TO BE EXECUTED, AND SUBSTRATE CONVEYOR

Tokyo Electron Limited, ...

1. A substrate conveying method conveying a layered body having a first substrate and a second substrate stacked in layers
with a spacer member provided between respective bottom surfaces thereof facing each other, the substrate conveying method
comprising:
receiving the first substrate accommodated in an accommodating part by holding the first substrate from below the bottom surface
thereof using a first holding mechanism provided on a side of a first fork provided on a turnable base so as to be positioned
above a second fork provided on the turnable base, and turning the first fork upside down and placing the received first substrate
on the second fork;

receiving the spacer member held in a substrate holding part by holding the spacer member from above the spacer member using
a second holding mechanism provided on the same side of the first fork as the first holding mechanism, and placing the received
spacer member on the first substrate placed on the second fork; and

holding the second substrate accommodated in the accommodating part from above a top surface thereof using the first holding
mechanism, and placing the received second substrate on the spacer member placed over the second fork.

US Pat. No. 9,353,442

APPARATUS FOR FORMING SILICON-CONTAINING THIN FILM

TOKYO ELECTRON LIMITED, ...

1. An apparatus for forming a silicon-containing thin film, the apparatus comprising:
a processing chamber in which a substrate having a base is disposed;
a process gas supply mechanism which supplies gas used for a process into the processing chamber;
a heating device which heats the substrate;
an exhauster which evacuates the interior of the processing chamber; and
a controller which is configured to control the process gas supplying mechanism, the heating device, and the exhauster to
perform:

forming a first seed layer on the base by adsorbing at least silicon included in an aminosilane-based gas on the base, using
the aminosilane-based gas;

forming a second seed layer on the first seed layer by depositing at least silicon included in a higher-order silane-based
gas having an order that is equal to or higher than disilane, using the higher-order silane-based gas having an order that
is equal to or higher than the disilane, wherein the first seed layer and the second seed layer form a dual seed layer; and

forming the silicon-containing thin film on the dual seed layer.

US Pat. No. 9,351,389

PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus, comprising:
a processing chamber having a dielectric window;
a substrate holding unit for holding thereon a processing target substrate within the processing chamber;
a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma
process on the substrate;

a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing
chamber by inductive coupling; and

a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency
electric discharge of the processing gas,

wherein the RF antenna includes an inner coil and an outer coil arranged concentrically and respectively provided at an inner
side and an outer side thereof in a radial direction with a gap there-between,

the inner coil includes a single inner coil segment or more than one inner coil segments extended along one round, separated
in a circumferential direction and connected in series, the outer coil includes a plurality of outer coil segments extended
along one round and separated in a circumferential direction and electrically connected with each other in parallel,

self-inductances of the inner and outer coil segments are all substantially same,
the inner coil and outer coil are configured such that an entire diameter of the RF antenna is adjusted so that a diameter
ratio between the inner coil and the outer coil is maintained constant for adjusting a plasma density distribution on the
processing target substrate, and

the inner coil, the outer coil including the segments are located on a same plane, and lengths of the inner and outer coil
segments are substantially same.

US Pat. No. 9,348,340

LIQUID PROCESSING APPARATUS

Tokyo Electron Limited, ...

1. A liquid processing apparatus comprising:
a first line connected to a processing liquid supply source;
a pump configured to send a processing liquid from the processing liquid supply source to the first line;
a plurality of second lines connected to the first line;
a branch line connected to a branch point on each of the plurality of second lines;
a liquid processing unit configured to perform a liquid processing on a substrate with the processing liquid supplied through
each branch line;

an orifice provided at an upstream side of the branch point on each of the plurality of second lines;
a first control valve provided at a downstream side of the branch point on each of the plurality of second lines;
a flowmeter provided on each of the branch lines; and
a control unit configured to control a corresponding first control valve based on a flow rate detected by the flowmeter to
control the flow rate of the processing liquid flowing through a corresponding branch line,

wherein the first control valve changes an amount of the processing liquid flowing to a downstream side of the first control
valve in order to control a pressure of the processing liquid in a section between the orifice of a corresponding second line
and the first control valve, and a flow rate of the processing liquid supplied to the corresponding liquid processing unit
through the corresponding branch line.

US Pat. No. 9,318,387

METHOD FOR SEPARATING AND TRANSFERRING IC CHIPS

TOKYO ELECTRON LIMITED, ...

1. A method for separating a multiple number of semiconductor devices or semiconductor integrated circuits from a wafer on
which the multiple number of semiconductor devices or semiconductor integrated circuits are formed, the method comprising:
separating each of the semiconductor devices or semiconductor integrated circuits,
wherein each of the separated semiconductor devices or semiconductor integrated circuits is non-rectangular shaped,
the step of separating each of the semiconductor devices or semiconductor integrated circuits is performed by dry etching,
a test device is formed on an area of a groove width required for separating the semiconductor devices or semiconductor integrated
circuits, and

the semiconductor devices or semiconductor integrated circuits are separated without a waste of space except for the area
of the groove width required for separating the semiconductor devices or semiconductor integrated circuits, with the test
device being separated from the semiconductor devices or semiconductor integrated circuits.

US Pat. No. 9,257,529

METHOD OF FORMING SELF-ALIGNED CONTACTS USING A REPLACEMENT METAL GATE PROCESS IN A SEMICONDUCTOR DEVICE

Tokyo Electron Limited, ...

1. A method of forming self-aligned contacts in a semiconductor device, the method comprising:
receiving a substrate having a first structure of a first material composition and a Second structure of a second material
composition, the second structure being formed immediately adjacent to the first structure, the first structure and second
structure being of different heights such that together the first structure and the second structure defining a first topography
that is non-planar at an upper surface thereof;

depositing a first layer on the first topography, the first layer being partially conformal resulting in the first layer defining
a second topography, the first layer defining a valley over the first structure and forming a peak over the second structure;

depositing a second layer on the first layer, the second layer being sufficiently thick to fill the defined valley and cover
the peak of the second topography;

planarizing the second layer down to the first layer above the second structure such that the peak in the first layer is exposed
while the defined valley remains filled with the second layer; and

etching exposed portions of the first layer down until reaching the second structure beneath the first layer, the second layer
in the defined valley functioning as a hard mask that impedes etching of the first layer above the first structure relative
to etching of the first layer above the second structure.

US Pat. No. 9,256,131

DEVELOPING METHOD FOR DEVELOPING APPARATUS

Tokyo Electron Limited, ...

1. A developing apparatus configured to rotate a horizontally held substrate on which a resist film is formed, and to develop
the substrate by supplying a developer onto a surface of the substrate, the developing apparatus comprising:
a substrate holding means configured to horizontally hold the substrate;
a rotating mechanism configured to rotate the substrate in a horizontal plane;
a first nozzle configured to supply the developer onto the substrate surface, while the substrate is being rotated by the
rotating mechanism;

a second nozzle, which is used for only a pre-wetting process before a developing step, and configured to supply a deionized
water onto the substrate surface, the second nozzle being located on a position nearer to an outer peripheral part of the
substrate than the first nozzle; and

a control means configured to control the rotating mechanism, the first nozzle, and the second nozzle;
wherein, before developing step in which the developer is supplied to the substrate, the control means drives the rotating
mechanism so as to rotate the substrate, and performs the pre-wetting process in which, simultaneously with the developer
being supplied from the first nozzle that is located on a position near a central part of the surface of the substrate, the
deionized water is supplied from the second nozzle that is located on a position nearer to the outer peripheral part of the
substrate than the first nozzle, to thereby spread out the developer in the rotating direction of the substrate by a wall
that is formed by the deionized water flowing to the outer peripheral side of the substrate with the rotation of the substrate.

US Pat. No. 9,373,582

SELF ALIGNED VIA IN INTEGRATED CIRCUIT

INTERNATIONAL BUSINESS MA...

1. A method for forming a via in an integrated circuit, the method comprising:
patterning a first opening in a first hardmask, the first hardmask including a titanium nitride (TiN) layer disposed on a
first organic self-planarizing polymer (OPL) layer;

removing an exposed portion of the first OPL layer to define a first cavity;
removing an exposed portion of a second hardmask in the first cavity;
removing an exposed portion of a first dielectric layer disposed under the second hardmask to further define the first cavity;
depositing a second OPL layer over the first hardmask and in the first cavity;
patterning an opening in the second OPL layer and second opening in a first hardmask;
removing the second OPL layer to expose the first hardmask;
removing an exposed portion of the first OPL layer defined by the second opening in the first hardmask to define a second
cavity;

removing an exposed portion of the second hardmask in the second cavity and removing a exposed portion of a first cap layer
in the first cavity;

removing an exposed portion of the first dielectric layer in the second cavity and an exposed portion of a second dielectric
layer in the first cavity;

removing an exposed portion of the first cap layer in the second cavity and an exposed portion of a second cap layer in the
first cavity;

removing an exposed portion of a liner layer over a first conductive material in the second cavity and an exposed portion
of a liner layer over a second conductive material in the first cavity; and

depositing a conductive material in the first cavity and the second cavity.

US Pat. No. 9,362,166

METHOD OF FORMING COPPER WIRING

TOKYO ELECTRON LIMITED, ...

1. A method of forming a copper wiring buried in a recess portion of a predetermined pattern formed in an interlayer insulation
layer of a substrate, the method comprising:
forming a manganese oxide film at least on a surface of the recess portion, the manganese oxide film serving as a self-aligned
barrier film through reaction with the interlayer insulation layer;

performing hydrogen radical treatment with respect to a surface of the manganese oxide film;
placing a metal more active than ruthenium on the surface of the manganese oxide film after the hydrogen radical treatment;
forming a ruthenium film on the surface where the metal more active than ruthenium is present; and
forming a copper film on the ruthenium film by physical vapor deposition (PVD) to bury the copper film in the recess portion,
wherein the placing a metal more active than ruthenium is performed by discontinuously forming the metal on a wall portion
of the recess portion.

US Pat. No. 9,342,880

DEFECT ANALYZING APPARATUS, SUBSTRATE PROCESSING SYSTEM, DEFECT ANALYZING METHOD AND COMPUTER-READABLE STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A defect analyzing apparatus of analyzing a defect of a substrate, the defect analyzing apparatus comprising:
an imaging unit configured to image target substrates;
a defect feature value extracting unit configured to extract a defect feature value in a surface of the substrate based on
the substrate image;

a defect feature value accumulating unit configured to calculate an accumulated defect feature value with respect to the substrates;
a defect determination unit configured to determine whether the accumulated defect feature value exceeds a preset critical
value; and

an output display unit configured to output a determination result from the defect determination unit,
wherein the defect feature value is at least any one of a defect height or a defect width, and
the defect feature value accumulating unit is configured to update an accumulation data including at least any one of a total
defect height or a total defect width, by accumulating at least any one of the defect height or the defect width of the substrate
into at least any one of the total defect height or the total defect width with respect to each of the same coordinates on
the substrates.

US Pat. No. 9,224,624

LIQUID PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution
and then performing a rinse process on the front surface of the substrate by using a first rinse solution and a second rinse
solution having a temperature lower than a temperature of the processing solution, the method comprising:
performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front
surface of the substrate to a temperature higher than the temperature of the second rinse solution and lower than the temperature
of the processing solution,

wherein, in the intermediate process, an intermediate processing solution having a temperature higher than the temperature
of the second rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface
of the substrate, and

in the rinse process, the first rinse solution having a temperature substantially equal to the temperature of the intermediate
processing solution is supplied to the front surface of the substrate and, then, the second rinse solution having a temperature
lower than the temperature of the intermediate processing solution is supplied to the front surface of the substrate.

US Pat. No. 9,136,133

METHOD OF DEPOSITING FILM

Tokyo Electron Limited, ...

1. A method of depositing a film, the method comprising the steps of:
alternately supplying a first process gas and a second process gas that react with each other to cause an atomic layer or
a molecular layer of a reaction product of the first process gas and the second process gas to deposit on a substrate in a
chamber by repeating a cycle of alternately supplying the first process gas and the second process gas to the substrate once
each cycle; and

continuing to supply the second process gas while stopping the supply of the first process gas for a predetermined period
of time after depositing the film of a predetermined thickness by repeating the cycle a predetermined number of times,

wherein a cycle time of the cycle is set at a predetermined time that causes the reaction product to have a density low enough
to ensure gaps and/or intrusion routes to allow the second process gas to go into the film during the step of continuing to
supply the second process gas while stopping the supply of the first process gas for the predetermined period of time.

US Pat. No. 9,093,222

DYE ADSORPTION APPARATUS AND DYE ADSORPTION METHOD

Tokyo Electron Limited, ...

20. A dye adsorption method of adsorbing a dye into a porous semiconductor layer formed on a treated surface of a substrate,
the method comprising:
a first step of arranging a plurality of substrates in a row such that the treated surfaces are parallel to each other and
introducing the plurality of substrates into the processing tank;

a second step of supplying a dye solution formed by solving the dye in a solvent into the processing tank in a first direction
parallel to the treated surfaces; and

a third step of switching to a second direction which is different from the first direction and parallel to the treated surfaces
and supplying the dye solution.

US Pat. No. 9,086,631

EUV RESIST SENSITIVITY REDUCTION

Tokyo Electron Limited, ...

1. A method for patterning a substrate, comprising:
providing a substrate having a layer of extreme ultra violet (EUV) resist characterized by a target critical dimension (CD);
selecting a target CD for a pattern to be formed in said layer of EUV resist;
selecting a target exposure dose for exposing said layer of EUV resist to EUV radiation to achieve said target CD in said
layer of EUV resist;

exposing said layer of EUV resist to said EUV radiation at a first exposure dose less than said target exposure dose and developing
said layer of EUV resist to achieve said pattern with a first CD larger than said target CD, said pattern having a first roughness;

performing a CD slimming process to reduce said first CD to a second CD, said second CD being substantially equivalent to
said target CD; and

performing, optionally, a smoothing process to reduce said first roughness to a second roughness.

US Pat. No. 9,478,435

METHOD FOR DIRECTED SELF-ASSEMBLY AND PATTERN CURING

TOKYO ELECTRON LIMITED, ...

1. A method of processing a substrate, the method comprising:
positioning a substrate on a substrate holder of a plasma processing system, the substrate having a micro phase-separated
pattern of block copolymers formed by directed self-assembly (DSA);

flowing a first process gas into a plasma processing chamber of the plasma processing system, the first process gas being
a gas that generates vacuum ultra violet radiation in a plasma state;

irradiating the substrate with vacuum ultra violet radiation originating from plasma generated using the first process gas
such that a first block copolymer increases in hardness and a second block copolymer decreases in hardness as compared to
respective hardness values prior to exposure to vacuum ultra violet radiation;

flowing a second process gas into the plasma processing chamber, the second process gas being a gas that generates etchants
in a plasma state; and

executing an etch process that exposes the substrate to plasma products generated from the second process gas such that at
least a portion of the second block copolymer is etched and removed from the substrate.

US Pat. No. 9,412,635

ELECTROSTATIC CHUCK DEVICE

Tokyo Electron Limited, ...

1. An electrostatic chuck device comprising:
an electrostatic chuck part that has a placement surface for placing a plate-shaped sample and has an internal electrode for
electrostatic attraction built therein; and

a cooling base part that cools the electrostatic chuck part,
wherein the electrostatic chuck part and the cooling base part are integrally adhered to each other via a first adhesive layer,
wherein the electrostatic chuck part and the cooling base part are formed with a cooling gas hole passing through the electrostatic
chuck part and the cooling base part and/or a pin-inserting hole allowing a pin for attaching/detaching the plate-shaped sample
to be inserted thereinto, and

wherein an insulator having a double pipe structure including a first insulator and a second insulator provided coaxially
with an outer peripheral portion of the first insulator is provided in any one or both of the cooling gas hole and the pin-inserting
hole so as to cover at least an exposed surface of the first adhesive layer.

US Pat. No. 9,362,135

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

TOKYO ELECTRON LIMITED, ...

1. A semiconductor device manufacturing method, the method comprising:
accommodating a semiconductor substrate in a processing chamber of a plasma processing apparatus, wherein the semiconductor
substrate includes: an insulation layer having a protruding shape and having a surface that conforms to a surface of the semiconductor
substrate and a rising surface that protrudes upward while perpendicular to the surface of the insulation layer; and a conductive
layer to cover the insulation layer having the protruding shape; and

patterning in the processing chamber a predetermined region of the conductive layer according to an etching process so as
to remove the predetermined region and expose the insulation layer having the protruding shape, wherein the etching process
is performed by microwave plasma while applying bias power of 70 mW/cm2 or above to the semiconductor substrate under a high pressure condition of 85 mTorr or above, and a ratio of etching rate
of the conductive layer to etching rate of the insulation layer is 50 or higher in the etching process.

US Pat. No. 9,349,574

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma etching method comprising:
a plasma process of plasma-processing a surface of a photoresist, which has a predetermined pattern and is formed on a target
object, with plasma generated from a hydrogen-containing gas; and

an etching process of etching a silicon-containing film with plasma generated from a CF-based gas and a gas containing a CHF-based
gas by using the plasma-processed photoresist as a mask,

wherein each of the plasma process and the etching process is repeated at least two or more times.

US Pat. No. 9,322,844

PROBE CARD FOR POWER DEVICE

TOKYO ELECTRON LIMITED, ...

1. A probe card that inspects a dynamic characteristic of a plurality of power devices formed on a semiconductor wafer, the
probe card comprising:
a first probe configured to come into electric contact with an emitter electrode of the power device;
a block-shaped first connecting terminal to which the first probe is connected;
a second probe configured to come into electric contact with a gate electrode of the power device;
a block-shaped second connecting terminal to which the second probe is connected;
a contact plate configured to come into electric contact with a collector electrode of the power device;
a supporting board to which the first connecting terminal and the second connecting terminal are fixed;
and
a block-shaped third connecting terminal fixed to the contact plate,
wherein the first connecting terminal and the second connecting terminal are inserted through the supporting board and exposed
from two opposite surfaces of the supporting board,

and
the third connecting terminal is inserted through a hole formed in the supporting board.

US Pat. No. 9,257,278

METHOD FOR FORMING TIN AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A method of forming a TiN film to be used as a metallic hard mask in etching of an etching target film formed on a substrate
to be processed, the method comprising:
alternately repeating a step of forming a TiN unit film and a step of performing a plasma nitriding process on the TiN unit
film to form a TiN film having a reduced film stress,

wherein the step of forming the TiN unit film is performed by loading the substrate to be processed into a processing chamber,
supplying TiCl4 gas and a nitriding gas into the processing chamber while maintaining an inside of the processing chamber in a depressurized
state, and generating a plasma from the TiCl4 gas and the nitriding gas,

wherein the step of performing the plasma nitriding process is performed by supplying a nitriding gas into the processing
chamber and generating a plasma from the nitriding gas,

wherein a film thickness of the TiN film is 10 to 40 nm, and the number of repeating the step of forming the TiN unit film
and the step of performing the plasma nitriding process is in a range from 3 to 10, and

wherein a film stress of the TiN film subjected to the second cycle of the step of forming the TiN unit film and the step
of performing the plasma nitriding process is controlled to about zero.

US Pat. No. 9,255,331

APPARATUS FOR PLATING PROCESS

TOKYO ELECTRON LIMITED, ...

1. A plating apparatus for a plating process, comprising:
an outer chamber;
an inner chamber covered by the outer chamber;
a rotatable holding mechanism configured to hold a substrate horizontally and installed in the inner chamber;
a fluid supply unit configured to supply a plating solution to a preset position on the substrate;
a gas supply device configured to generate a nonreactive gas and control a temperature of the nonreactive gas;
a gas supply hole configured to supply the nonreactive gas into the outer chamber and provided in a top surface of the outer
chamber;

a plurality of gas inlet openings provided at a sidewall of the inner chamber and spaced apart at equal distances; and
a rectifying plate disposed above the substrate and below the plurality of gas inlet openings inside the inner chamber, the
rectifying plate having a plurality of rectifying holes uniformly disposed in the rectifying plat;

wherein a sidewall of the outer chamber circumferentially surrounds the sidewall of the inner chamber.

US Pat. No. 9,223,305

SEMICONDUCTOR MANUFACTURING SYSTEM

TOKYO ELECTRON LIMITED, ...

1. A semiconductor manufacturing system comprising:
a semiconductor manufacturing apparatus;
circuitry configured to output a control signal for controlling the semiconductor manufacturing apparatus, the circuitry including
a storage unit that stores a plurality of inspection sets for inspecting the semiconductor manufacturing apparatus, each of
the inspection sets a multiplicity of inspection items each of which has a manipulation item or a check item;

a display configured to display a screen for inputting an instruction for an inspection operation and checking the inspection
operation; and

a detector configured to detect a detection result corresponding to the check item and to send the detection result to the
circuitry,

wherein each of the inspection items stored in the storage unit has a manipulation item having an automatic execution attribute,
a manipulation item having a manual execution attribute, a check item having the automatic execution attribute, or a check
item having the manual execution attribute,

wherein the circuitry is configured to:
display a screen for selecting one of the inspection sets;
retrieve inspection items, which belong to the selected one of the inspection sets, arrange the retrieved inspection items
in the order of workflow, and display each of the retrieved inspection items on a screen along with the corresponding automatic
or manual execution attribute;

receive an inspection start command and read out, from the storage unit, the first inspection item among the retrieved inspection
items that are arranged in order,

wherein the circuitry is configured to execute, during a maintenance of the semiconductor manufacturing apparatus, one of
the following steps (a) to (d) until there remains no more next inspection item:

(a) when the read-out inspection item is the manipulation item having the automatic execution attribute, outputting a command
for implementing an operation corresponding to the manipulation item to a manipulation target device and reading out a next
inspection item among the retrieved inspection items from the storage unit;

(b) when the read-out inspection item is the manipulation item having the manual execution attribute, displaying a screen
for receiving an input indicating that the corresponding manipulation item has been executed by a user and reading out a next
inspection item among the retrieved inspection items from the storage unit by receiving the input;

(c) when the read-out inspection item is the check item having the automatic execution attribute, automatically executing
the check item based on the detection result of the corresponding check item from the detector and displaying a checkup result
on the screen on which the retrieved inspection items are displayed in a corresponding relationship with the check item and,
when the checkup result is normal and there exists a next inspection item, reading out the next inspection item from the storage
unit; and

(d) when the read-out inspection item is the check item having the manual execution attribute, displaying a screen for receiving
an input of determining whether a checkup result is normal or abnormal, displaying a screen showing the inputted checkup result
in a corresponding relationship with the check item, and, when the inputted checkup result is normal and there exists a next
inspection item, reading out the next inspection item from the storage unit.

US Pat. No. 9,196,461

PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising: a process chamber in which a substrate is received and plasma processing is performed;
a lower electrode which is provided in the process chamber and functions as a holding stage on which the substrate is placed;
an upper electrode which is provided in the process chamber to face the lower electrode, provides a process space between
the upper electrode and the lower electrode, functions as a shower head for introducing a process gas to the substrate through
a plurality of gas ejecting holes provided in a surface of the upper electrode facing the lower electrode, and is vertically
movable to change an interval between the upper electrode and the lower electrode;

a cover body which is provided over the upper electrode and hermetically closes an upper opening of the process chamber;
a bellows which is adapted to be stretchable and retractable and is provided between the cover body and a top surface of the
upper electrode;

an isolated space providing member which is disposed in an annular space surrounded by the upper electrode, the cover body,
a side wall of the process chamber, and the bellows, has an isolated space therein and a folded portion, the isolated space
being separated from the process chamber, and includes an inlet/outlet through which a gas is introduced into or exhausted
from the isolated space so as to vary a volume of the isolated space, wherein the isolated space of the isolated space providing
member substantially fills the annular space when a size of the annular space varies as the upper electrode is vertically
moved;

a gas introducing and exhausting mechanism which introduces/exhausts the gas through the inlet/outlet into/from the isolated
space of the isolated space providing member; and

a high frequency power supply which generates plasma from the process gas by supplying high frequency power between the upper
electrode and the lower electrode.

US Pat. No. 9,177,839

COVER PART, PROCESS GAS DIFFUSING AND SUPPLYING UNIT, AND SUBSTRATE PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A substrate processing apparatus for plasma etching a substrate comprising:
a processing chamber that accommodates the substrate;
a processing gas diffusing and supplying unit serving as a showerhead that supplies a processing gas to the processing chamber;
a susceptor serving as a lower electrode configured to mount the substrate;
at least one processing gas introducing pipe that introduces the processing gas into the processing gas diffusing and supplying
unit; and

a gas exhaust pipe connected to a gas exhaust unit that performs vacuum exhaust of the processing chamber,
wherein the processing gas diffusing and supplying unit includes,
a supporting portion having an opening,
a plate including gas supply holes,
an internal space formed by the supporting portion and the plate, the internal space communicating with the opening, and directly
communicating with the gas supply holes,

a cover part installed within the internal space and attached to the supporting portion, wherein the cover part includes,
a shielding portion which is disposed within the internal space and has a surface facing the opening,
a side wall formed from a cylinder shaped member and which holds the shielding portion, the diameter of the cylinder shaped
member and the shielding portion being the same, and

a through hole formed at the side wall and communicating with the opening and the internal space,
wherein at least a portion of the gas supply holes is located right below the cover part and a height of the internal space
is equal to or greater than 8 mm so that the processing gas discharged from the through hole is diffused to the internal space
and is uniformly supplied through the gas supply holes, and

wherein the internal space is in the shape of a rectangular parallelopipedon, the height of the rectangular parallelopipedon
is ?, a width of the rectangular parallelopipedon is ?, a length of a space defined by a plane (i) and a plane (i?1) in the
rectangular parallelopipedon is L, where the plane (i) and the plane (i?1) are perpendicular to a length direction of the
rectangular parallelopipedon, pressures exerted on the plane (i) and the plane (i?1) are Psi and Ps(i?1), respectively, a viscosity coefficient is ?, a conductance Csi with regard to a gas flow direction in the space defined by
the plane (i) and the plane (i?1) is expressed by the following:

Csi=?3?/12 ?L·(Psi+Ps(i?1))/2, and

a flow rate Qsi of the gas flowing through the space defined by the plane (i) and the plane (i?1) is expressed by the following:

Qsi=Csi(Psi?Ps(i?1)).

US Pat. No. 9,151,780

WAFER INSPECTION INTERFACE AND WAFER INSPECTION APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A wafer inspection interface comprising:
a probe card including a substrate and a multiple number of probes that are provided at a surface of the substrate facing
a wafer and arranged to correspond to electrodes of a plurality of semiconductor devices formed on the wafer;

a frame that is in contact with a surface of the probe card opposite to a surface of the probe card facing the wafer and supports
the probe card; and

a plurality of spacers provided on the surface of the probe card in contact with the frame and configured to adjust a thickness
of the probe card,

wherein the probes of the probe card are divided into a plurality of probe groups corresponding to multiple semiconductor
devices formed on the wafer,

the plurality of spacers are provided at gaps between the probe groups, and
a thickness of each spacer is individually set based on a thickness of the probe card measured at a corresponding spacer attaching
position, so that a total thickness, including the thickness of the probe card and the thickness of each spacer, is uniform
at each spacer attaching position.

US Pat. No. 9,108,231

LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD, AND COMPUTER-READABLE RECORDING MEDIUM HAVING PROGRAM STORED THEREIN

Tokyo Electron Limited, ...

1. A liquid processing apparatus, comprising:
a rotation holding unit configured to hold and rotate a substrate to be processed around a vertical shaft;
a processing liquid supply unit configured to supply a processing liquid onto a target surface of the substrate held by the
rotation holding unit;

a first cup and a second cup configured to receive the processing liquid scattered from the substrate to guide the received
processing liquid downwards;

a first driving unit configured to elevate the first cup through a first elevating member between a processing position receiving
the processing liquid scattered from the rotating substrate and a retracting position located lower than the processing position
and to change a set value of an elevating speed of the first cup;

a second driving unit configured to elevate the second cup through a second elevating member between a processing position
receiving the processing liquid scattered from the rotating substrate and a retracting position located lower than the processing
position and to change a set value of an elevating speed of the second cup; and

a controller configured to output a control signal to the first driving unit and the second driving unit so as to ascend the
first cup at a higher speed than the second cup such that the second cup is pushed up by the first cup while at least a portion
of the first cup is overlapped with at least a portion of the second cup, thereby sealing a flow path formed between the first
cup and the second cup, when the first cup and the second cup are ascended to the processing position from the retracting
position at the same time.

US Pat. No. 9,052,610

COATING AND DEVELOPING SYSTEM AND COATING AND DEVELOPING METHOD

TOKYO ELECTRON LIMITED, ...

1. A coating and developing method for coating a surface of a substrate with a resist film by applying a liquid resist to
the surface of the substrate and forming a water-repellent protective film on the resist film, or
forming a water-repellent resist film on the substrate,
and processing the substrate by a developing process after the substrate has been processed by an immersion exposure process,
said coating and developing method comprising the steps of:
forming a resist film on a surface of a substrate;
cleaning the surface of the substrate with a cleaning liquid by a cleaning unit;
carrying the cleaned substrate to an exposure system by a carrying means to process the substrate by an immersion exposure
process; and

controlling the carrying means to adjust a time interval between a wetting time point when the surface of the substrate is
wetted with the cleaning liquid and a delivery time point when the substrate is delivered to an exposure system to a first
set time interval;

wherein the first set time interval is determined beforehand such that the substrate is subjected to the immersion exposure
process after contact angle drop rate at which contact angle between the surface of the substrate and the cleaning liquid
decreases has dropped from an initial level at a wetting time point when the surface of the substrate is wetted with the cleaning
liquid to a level far lower than the initial level and the contact angle has dropped to substantially a fixed level.

US Pat. No. 9,469,093

BONDING APPARATUS, BONDING SYSTEM AND BONDING METHOD

Tokyo Electron Limited, ...

1. A bonding apparatus comprising:
a first holding unit configured to hold a first substrate;
a second holding unit disposed facing the first holding unit and configured to hold a second substrate;
a pressing mechanism configured to relatively move the first holding unit and the second holding unit in order to contact
and press the first substrate and the second substrate; and

a holding mechanism configured to elastically hold an outer periphery of the first holding unit and the second holding unit,
wherein the holding mechanism is provided with a vertically biasing member configured to bias the first holding unit or the
second holding unit vertically with respect to a holding surface of the first holding unit or the second holding unit, and
holds the first holding unit or the second holding unit elastically by using the vertically biasing member,

a step dented in the holding surface is provided in the outer periphery of the first holding unit and the second unit, and
the holding mechanism is further provide with a claw portion abutting the step and biased vertically by the vertically biasing
member.

US Pat. No. 9,455,153

PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method using a plasma processing apparatus that includes a processing chamber configured to accommodate
a substrate and perform a plasma process thereon; a processing gas supply unit configured to supply a processing gas into
the processing chamber; a pair of parallel-plate electrodes provided within the processing chamber, the pair of parallel-plate
electrodes including a lower electrode serving as a mounting table and an upper electrode provided above the lower electrode;
an ion attraction power supply connected with the lower electrode and configured to apply a power for attracting ions to the
lower electrode; a plasma generation power supply connected with the lower electrode or the upper electrode and configured
to apply a power for generating plasma to the lower electrode or the upper electrode; an ion attraction matching unit configured
to perform impedance matching of the power for attracting ions, the ion attraction matching unit being connected to the lower
electrode; and a plasma generation matching unit configured to perform impedance matching of the power for generating plasma,
the plasma generation matching unit being connected to the lower electrode or the upper electrode, the method comprising:
controlling the plasma generation power supply to be operated in a continuous mode in which the power for generating plasma
is applied at a constant power level;

performing a power modulation that periodically switches the power for attracting ions between a first power and a second
power higher than the first power;

performing a mask control that stops a matching operation of the ion attraction matching unit for an application time of the
first power and for a preset time after an application of the second power is started; and

stopping the matching operations of the plasma generation matching unit and the ion attraction matching unit simultaneously
for the preset time.

US Pat. No. 9,257,280

MITIGATION OF ASYMMETRICAL PROFILE IN SELF ALIGNED PATTERNING ETCH

TOKYO ELECTRON LIMITED, ...

1. A method for self-aligned pattern etching, the method comprising:
providing a substrate having spacers formed on a sidewall of one or more mandrels, wherein the spacers are formed on an underlying
layer, and the spacers are formed of a first material, and wherein the underlying layer is formed of a second material;

removing the one or more mandrels, such that the resulting spacers have a cross sectional shape in which a first sidewall
is relatively planar and a second sidewall, on an opposite side of a respective spacer, is faceted having a non-planar surface;

etching a first portion of the underlying layer using the spacers as a mask;
depositing or growing a protective layer on sidewalls of the underlying layer created during etching of the first portion;
and

etching a remaining portion of the underlying layer using the spacers as a mask;
wherein the etching of the first portion and the etching of the second portion are performed by plasma etching;
wherein etching is stopped during the depositing or growing of the protective layer;
wherein during the depositing or growing of the protective layer upon the sidewalls that are formed during the etching of
the first portion, the protective layer is also deposited on a bottom wall of the underlying layer, and wherein the method
further comprises performing a breakthrough etch to etch through the protective layer on the bottom wall of the underlying
layer; and

wherein during the breakthrough etch, both:
(a) a plasma gas chemistry is used which is different than a plasma gas chemistry used during etching of the remaining portion
of the underlying layer; and

(b) a pressure in a processing chamber is reduced compared to a pressure used during the depositing or growing of the protective
layer.

US Pat. No. 9,202,675

PLASMA PROCESSING APPARATUS AND ELECTRODE FOR SAME

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a processing chamber in which a target object is processed by a plasma;
a first and a second electrode that are provided in the processing chamber to face each other and wherein a processing space
is between the first and second electrodes; and

a high frequency power source that is connected to one of the first and the second electrodes to supply a high frequency power
to the processing chamber, wherein at least one electrode of the first and the second electrodes includes:

(a) a base formed of a plate-shaped dielectric material;
(b) a resistor formed of a metal and provided between the base and the processing space, wherein the resistor includes a plurality
of members that are each located at a position at which a high frequency electric field strength is to be lowered, and wherein
the plurality of members are configured to reduce a degree of variation in high frequency electric field distribution on a
plasma-facing side of the at least one electrode by converting, at each of the positions of the plurality of members, a current
from the high frequency power to heat in order to lower the high frequency electric field strength at those positions; and

(c) an additional resistor formed of a metal and located between the base and the processing space, wherein the additional
resistor has a sheet resistance that causes a potential difference to occur between a central position of the additional resistor
and an end position of the additional resistor when the current flows along the additional resistor, and wherein the sheet
resistance of the additional resistor is in a range from about 20 ?/? to about 2000 ?/?, and

wherein the resistor and the additional resistor are located on two different vertical planes of the same electrode.

US Pat. No. 9,190,271

THIN FILM FORMATION METHOD

TOKYO ELECTRON LIMITED, ...

1. A thin film formation method to form an amorphous silicon film containing an impurity on a surface of an object to be processed
in a process chamber that allows vacuum exhaust, the method comprising:
adsorbing a silane-based gas composed of silicon and hydrogen on the surface of the object by supplying the silane-based gas
onto the surface of the object, while not supplying a gas containing the impurity into the process chamber, wherein the adsorbing
of the silane-based gas and the supplying of the silane-based gas are performed under a first predetermined temperature and
a first predetermined pressure where the silane-based gas is able to be adsorbed on the surface and not to be thermally decomposed;

stopping supplying the silane-based gas; and
reacting the adsorbed silane-based gas with the gas containing the impurity by catalysis of an atom of the gas containing
the impurity to form the amorphous silicon film containing the impurity on the surface of the object by supplying the gas
containing the impurity onto the surface adsorbed with the silane-based gas, under a second predetermined temperature and
a second predetermined pressure where an amorphous silicon film is able to be formed,

wherein the adsorbing, the stopping and the reacting are performed and repeated in the described order, and
the gas containing the impurity comprises one or more gases selected from the group consisting of BC13, PH3, PF3, AsH3, PC13, and B2H6.

US Pat. No. 9,153,465

SUBSTRATE STAGE, SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM

TOKYO ELECTRON LIMITED, ...

1. A substrate stage for mounting two or more substrates thereon, the substrate stage comprising:
a peripheral stage member on which a peripheral substrate portion of the substrate is mounted, the peripheral stage member
controlling a temperature of the peripheral substrate portion;

a central stage member on which a central substrate portion of the substrate is mounted, the central stage member controlling
a temperature of the central substrate portion; and

a support base that supports the peripheral stage member and the central stage member,
wherein the peripheral stage member includes two or more annular peripheral stage portions and a peripheral stage connecting
portion that couples the peripheral stage portions arranged side by side in a horizontal direction, the central stage member
includes two or more disc-shaped central stage portions having a shape corresponding to inner circumferences of the peripheral
stage portions and a central stage connecting portion that couples the central stage portions arranged side by side in the
horizontal direction, annular gaps are formed between the peripheral stage portions and the central stage portions in the
horizontal direction, a gap is formed between the peripheral stage connecting portion and the central stage connecting portion
in a vertical direction, and the peripheral stage connecting portion and the central stage connecting portion are coupled
to the support base while keeping the peripheral stage portions and the central stage portions from coming into contact with
each other, and

wherein each of the peripheral stage portions has a top surface on which the peripheral substrate portion is mounted, and
is fixed to the peripheral stage connecting portion.

US Pat. No. 9,140,726

SUPPORT BODY FOR CONTACT TERMINALS AND PROBE CARD

TOKYO ELECTRON LIMITED, ...

1. A support body for a plurality of contact terminals included in a probe card for inspecting semiconductor devices formed
in a semiconductor substrate, the support body comprising:
a pair of plate-shaped members facing each other;
a thermal conductor filled between the pair of plate-shaped members; and
a plurality of contact terminal holes, each of which is formed by arranging openings, which are formed through the plate-shaped
members in a thickness direction of the plate-shaped members, to substantially align with one another in the thickness direction,

wherein the contact terminals are inserted into the contact terminal holes to be in contact with the thermal conductor, and
wherein one or more coolant paths are embedded in the thermal conductor.

US Pat. No. 9,111,746

METHOD FOR REDUCING DAMAGE TO LOW-K GATE SPACER DURING ETCHING

Tokyo Electron Limited, ...

1. A method for performing a spacer etch process, comprising:
providing a gate structure on a substrate having a low-k spacer material conformally applied over said gate structure, wherein
said low-k spacer material contains Si, N, C, and B; and

performing a spacer etch process sequence to partially remove said low-k spacer material from said gate structure and said
substrate, while retaining a sidewall spacer positioned along a sidewall of said gate structure, said spacer etch process
sequence comprising:

depositing a spacer protection layer on an exposed surface of said low-k spacer material;
performing one or more etching processes to selectively and anisotropically remove said spacer protection layer and said low-k
spacer material from a capping region of said gate structure and from a substrate region on said substrate adjacent a base
of said gate structure to leave behind said sidewall spacer on said sidewall of said gate structure, wherein, while being
partly or fully consumed by said one or more etching processes, said spacer protection layer limits exposure of said sidewall
spacer to one or more chemical constituents in said one or more etching processes and reduces depletion of B or C in said
sidewall spacer; and

repeating said depositing said spacer protection layer and said performing said one or more etching processes until said sidewall
spacer remains as the only low-k spacer material on said gate structure.

US Pat. No. 9,097,681

INSPECTION DEVICE, BONDING SYSTEM AND INSPECTION METHOD

TOKYO ELECTRON LIMITED, ...

1. An apparatus of inspecting an overlapped substrate obtained by bonding substrates together, comprising:
a first holding unit configured to hold and rotate the overlapped substrate;
a displacement gauge configured to measure displacements of peripheral sides of a first substrate and a second substrate constituting
the overlapped substrate while rotating the overlapped substrate held by the first holding unit;

a second holding unit configured to hold a rear surface of the overlapped substrate, and including a cutout to expose a portion
of the rear surface of the overlapped substrate therethrough when viewed from the top;

a first infrared irradiation unit configured to irradiate an infrared ray on the exposed portion of the rear surface or a
front surface of the overlapped substrate which is exposed through the cutout of the second holding unit; and

an image pickup unit configured to receive the infrared ray irradiated from the first infrared irradiation unit and configured
to pick up images of the exposed portions of the rear surface or the front surface of the overlapped substrate, which are
exposed through the cutout of the second holding unit,

wherein the cutout is formed to expose a quarter of the rear surface of the overlapped substrate therethrough,
wherein the second holding unit includes four support members configured to hold the rear surface of the overlapped substrate,
and

wherein the four support members are formed to be orthogonal to each other when viewed from the top.

US Pat. No. 9,245,764

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

TOKYO ELECTRON LIMITED, ...

1. A method of manufacturing a semiconductor device, the method comprising:
forming a patterned silicon-containing layer on a substrate using a mask;
forming a silicon nitride layer or a silicon oxide layer to cover an entire portion of the patterned silicon-containing layer
formed on the substrate;

selectively removing the silicon nitride layer or the silicon oxide layer such that the silicon nitride layer or the silicon
oxide layer remains on the side wall portion of the patterned silicon-containing layer and a top surface of the silicon-containing
layer is exposed; and

after the selectively removing the silicon nitride layer or the silicon oxide layer, selectively removing the silicon-containing
layer through plasma etching so that the silicon nitride layer or the silicon oxide layer formed on the side wall portion
is left forming a pattern of the silicon nitride layer or the silicon oxide layer having a narrower pitch than the patterned
silicon-containing layer,

wherein the plasma etching is performed using an inductively coupled plasma having a high frequency power of 200 W or more
and an etching gas containing a SF6 gas in both the selectively removing the silicon nitride layer or the silicon oxide layer and the selectively removing the
silicon-containing layer.

US Pat. No. 9,228,685

LOAD LOCK DEVICE

TOKYO ELECTRON LIMITED, ...

11. A load lock device used when a substrate is transferred from an atmospheric atmosphere into a vacuum chamber maintained
in a vacuum state and when the substrate is transferred from the vacuum chamber into the atmospheric atmosphere, the load
lock device comprising:
a vessel of which an internal pressure is variable between a pressure corresponding to the vacuum chamber and an atmospheric
pressure;

a purge gas supply unit configured to supply a purge gas into the vessel;
an exhaust device configured to evacuate an inside of the vessel;
a pressure controller configured to adjust the internal pressure of the vessel to be the pressure corresponding to the vacuum
chamber when the inside of the vessel communicates with the vacuum chamber and configured to adjust the internal pressure
of the vessel to be the atmospheric pressure when the inside of the vessel communicates with a space under the atmospheric
atmosphere by controlling the purge gas supply unit and the exhaust device;

a cooling member, having a cooling device, provided within the vessel and configured to cool the substrate while the substrate
is placed adjacent thereto; and

a purge gas discharging member formed of a porous material and configured to discharge the purge gas toward a bottom surface
of the substrate from below the substrate placed adjacent to the cooling member,

wherein the purge gas discharging member formed of the porous material is provided in an upper portion of the cooling member.

US Pat. No. 9,162,163

PROCESSING LIQUID SUPPLY METHOD, PROCESSING LIQUID SUPPLY APPARATUS AND STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A method for supplying a processing liquid in a liquid processing apparatus, comprising:
providing a filter unit including a filtration member in a dried state in the liquid processing apparatus, the filter unit
being provided with an introducing port through which the processing liquid is introduced into the filter unit, an external
supply port through which the processing liquid is supplied to a nozzle, and a venting port through which an inside atmosphere
of the filter unit is exhausted, and each of the external supply port and the venting port is configured to be selectively
connected either to a drainage passage or to an exhaust passage;

filling the processing liquid into the filter unit by opening the introducing port and the venting port while closing the
external supply port, the venting port being connected to the drainage passage draining the processing liquid from the filter
unit such that the filtration member of the filter unit is immersed in the processing liquid;

continuing the filling of the processing liquid into the filter unit by opening the introducing port and the external supply
port while closing the venting port, the external supply port being connected to the drainage passage, thereby continuing
the immersing of the filtration member of the filter unit;

after the continuing of the filling the processing liquid into the filter unit, decompressing inside of the filter unit into
a first pressure atmosphere which is a negative pressure atmosphere lower than a pressure at the time of supplying the processing
liquid to an object to be processed, the decompressing being performed by closing the introducing port while opening the external
supply port and the venting port, and each of the external supply port and the venting port being connected to the exhaust
path thereby removing bubbles from the filter unit;

after the decompressing, boosting the inside of the filter unit from the first pressure atmosphere to be atmospheric pressure
closing port while opening the external supply port and the venting port, and each of the external supply port and the venting
port being connected to the drainage passage;

after the boosting, flowing the processing liquid into the filter unit from a primary side of the filter unit in a state where
a secondary side of the filter unit is maintained at a second pressure atmosphere which is higher than the first pressure
atmosphere but lower than the atmospheric pressure; and

after the flowing, supplying the processing liquid flowing from the filter unit to the object to be processed through a nozzle
thereby performing a liquid processing.

US Pat. No. 9,490,105

PLASMA PROCESSING APPARATUS AND METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma processing apparatus comprising:
a process container that forms a process space to accommodate a target substrate;
an exhaust unit connected to an exhaust port of the process container to vacuum-exhaust gas from inside the process container;
an exhaust plate interposed between the process space and the exhaust port to rectify a flow of exhaust gas;
a first electrode and a second electrode disposed opposite each other within the process container, the first electrode being
an upper electrode and the second electrode being a lower electrode and configured to support the target substrate through
a mount face, a plasma generation area being defined between the first and second electrodes;

an electrode support made of an insulating material and including a first portion interposed between the second electrode
and a bottom of the process container and a second portion surrounding the second electrode;

a conductive focus ring disposed on the second electrode to surround the target substrate, the focus ring being located on
an inner side relative to the second portion of the electrode support in radial directions;

a first radio frequency (RF) power application unit connected to the first electrode and configured to apply a first RF power
to the first electrode;

a second RF power application unit connected to the second electrode and configured to apply a second RF power to the second
electrode;

a third RF power application unit connected to the second electrode and configured to apply a third RF power to the second
electrode;

a direct current (DC) power supply connected to the first electrode and configured to apply a DC voltage to the first electrode;
a process gas supply unit configured to supply a process gas into the process container;
a first shield part covering a side surface of the second portion of the electrode support and formed of a first conductive
internal body and a first insulator covering the first conductive internal body; and

a conductive member disposed within the process container and grounded to release through plasma a current caused by the DC
voltage applied from the DC power supply to the first electrode, the conductive member being supported by the first shield
part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between the mount
face and the exhaust plate and below a bottom of the focus ring, so as for the conductive member to be exposed to the plasma,
and the conductive member being grounded through the first conductive internal body of the first shield part.

US Pat. No. 9,460,896

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method for performing a plasma process on a target substrate having an insulating film and a mask film
of a titanium-containing material in a plasma processing space, the plasma processing method comprising:
a first process of supplying a first fluorine-containing gas into the plasma processing space and etching the insulating film,
with plasma of the first fluorine-containing gas and with the mask film of the titanium-containing material as a mask, so
that a carbon-containing material generated from the insulating film and a titanium-containing material generated from the
mask film are deposited on a member in the plasma processing space;

a second process of supplying an O2 gas into the plasma processing space and removing, with plasma of the O2 gas, the carbon-containing material to expose the titanium-containing material deposited on the member; and

a third process of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space
and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the exposed titanium-containing
material deposited on the member, after the second process.

US Pat. No. 9,412,617

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method for plasma etching a multilayer film formed on a substrate to be processed in a processing chamber,
the plasma processing method comprising:
generating a plasma of a processing gas while using a patterned mask layer as a mask,
wherein the multilayer film includes a laminated film in which first films and second films are alternately laminated and
a silicon nitride layer is formed on the laminated film, wherein a dielectric constant of the first films is different from
that of the second films,

wherein the plasma etching is performed multiple times by introducing into the processing chamber the processing gas containing
a fluorocarbon-based gas and at least one of a bromine-containing gas, a chlorine-containing gas, and an iodine-containing
gas, so that a recess is formed to gradually extend from the silicon nitride layer through the laminated film, and

wherein etching of the laminated film proceeds while forming a protective film on a sidewall of the silicon nitride layer
exposed to the recess by adding a boron-containing gas to the processing gas at a predetermined flow rate ratio and at a predetermined
timing.

US Pat. No. 9,146,481

LOCAL EXPOSURE APPARATUS, LOCAL EXPOSURE METHOD AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A local exposure apparatus for performing exposure processing on a specific area of a photosensitive film formed on a metal
layer of a substrate, the photosensitive film having a thick portion and a thin portion, the apparatus comprising:
a substrate conveying unit configured to form a substrate conveying path and to horizontally convey the substrate along the
substrate conveying path at a specified substrate conveying speed;

a chamber configured to surround a part of the substrate conveying path and to form an exposure processing space in which
the substrate is subjected to the exposure processing;

a light source including a plurality of light-emitting elements linearly arranged in a direction intersecting a substrate
conveying direction above the substrate conveying path within the chamber, the light source being capable of illuminating
the photosensitive film on the substrate conveyed below the light source with lights emitted from the plurality of light-emitting
elements;

a light emission drive unit configured to selectively drive one or more of the plurality of light-emitting elements of the
light source as a single light emission control unit;

a substrate detecting unit arranged at an upstream side of the light source in the substrate conveying path and configured
to detect the substrate conveyed by the substrate conveying unit; and

a control unit configured to receive a substrate detection signal from the substrate detecting unit and to control the light
emission drive unit to drive the plurality of light-emitting elements,

wherein the control unit is configured to find a conveying position of the substrate based on the substrate detection signal
from the substrate detecting unit and the substrate conveying speed and control the light emission drive unit such that, when
the thin portion of the photosensitive film formed on the metal layer of the substrate moves below the light source, one or
more of the plurality of light-emitting elements capable of illuminating the thin portion having a film thickness being thicker
than a predetermined film thickness are driven to emit the lights thereby reducing the film thickness of the thin portion
based on reference data having two-dimensional coordinate values and a film thickness reduction value corresponding to the
thin portion having the film thickness being thicker than the predetermined film thickness,

wherein the local exposure apparatus is arranged before or after an exposure processing apparatus, the exposure processing
apparatus configured to perform further exposure process, and

wherein the reference data is obtained by measuring a residual resist film thickness, a line width of wiring patterns and
a pitch between the wiring patterns in a plane of each of sampling substrates exposure-processed by the exposure processing
apparatus.

US Pat. No. 9,096,164

VEHICULAR LAMP

Tokyo Electron Limited, ...

1. A vehicular lamp comprising:
a lamp body;
an exterior lens configured to define a lamp chamber between the lamp body and the exterior lens; and
a vibration device fixed to a component of the vehicular lamp,
wherein the vibration device includes:
a housing provided within the lamp chamber and fixed to the component of the vehicular lamp accommodating an electric circuit
and a vibration body configured to be vibrated when an electric signal is input to the electric circuit in order to cause
the component of the vehicular lamp to generate a sound;

and
a device connector integrally provided with the housing and configured to detachably connect the housing with an external
connector such that the external connector can be detachably connected to the device connector without an additional wiring
in order to be connected with the electric circuit and the vibration body in the housing.

US Pat. No. 9,484,230

SUBSTRATE LIQUID PROCESSING APPARATUS

Tokyo Electron Limited, ...

1. A substrate liquid processing apparatus comprising:
a substrate holding table configured to hold a substrate;
a rotary driving unit configured to rotate the substrate holding table;
a process-liquid supply unit configured to selectively supply a plurality of types of process-liquids to the substrate held
by the substrate holding table;

first and second guide cups which are provided around the substrate holding table and are disposed in this order from the
top, the first and second guide cups being configured to respectively guide downward the process-liquid scattering from the
rotating substrate while being held by the substrate holding table;

a position adjustment mechanism configured to adjust a positional relationship between the first and second guide cups and
the substrate holding table;

a first process-liquid recovery tank provided at a lower area of the first and second guide cups, the first process-liquid
recovery tank being configured to recover the process-liquid guided by the first guide cup;

a second process-liquid recovery tank provided at an inner peripheral side of the first process-liquid recovery tank, the
second process-liquid recovery tank being configured to recover the process-liquid guided by the second guide cup;

a guide member provided at the lower end portion of the second guide cup, the guide member being configured to guide the process-liquid
from the first guide cup to the first process-liquid recovery tank and guide the process-liquid from the second guide cup
to the second process-liquid recovery tank;

a first exhaust member provided between the first process-liquid recovery tank and the second process-liquid recovery tank,
the first exhaust member being configured to discharge an atmosphere around the substrate via an opening of the first guide
cup and an opening of the second guide cup;

a third guide cup provided below the second guide cup, the third guide cup being configured to guide the process-liquid scattering
from the rotating substrate while being held by the substrate holding table;

a third process-liquid recovery tank provided at an inner peripheral side of the second process-liquid recovery tank, the
third process-liquid recovery tank being configured to recover the process-liquid guided by the third guide cup;

a second exhaust member provided at an inner peripheral side of the third process-liquid recovery tank, the second exhaust
member being configured to discharge the atmosphere around the substrate via the third guide cup; and

a defining wall configured to define a passage from the second guide cup to the second process-liquid recovery tank and a
passage from the third guide cup to the third process-liquid recovery tank;

wherein the guide member covers an upper side of the first exhaust member,
the third guide cup includes a third guide cup body, and a third guide cup downward extension portion extending downward from
the third guide cup body,

the defining wall is provided between the guide member and the third guide cup downward extension portion, the defining wall
is in contact with the third guide cup downward extension portion and the third guide cup downward extension portion slides
along the defining wall during a movement of the third guide cup to block any gap that may be formed between the third guide
cup downward extension portion and the defining wall during the movement of the third guide cup, and

the defining wall defines a passage for discharging the atmosphere around the substrate via the first and second guide cup
by the first exhaust member and a passage for discharging the atmosphere around the substrate via the third guide cup by the
second exhaust member.

US Pat. No. 9,388,496

METHOD FOR DEPOSITING A FILM ON A SUBSTRATE, AND FILM DEPOSITION APPARATUS

TOKYO ELECTRON LIMITED, ...

1. A method for processing a substrate using a substrate processing apparatus including a process chamber and a turntable
having a substrate receiving part provided in the process chamber, the method comprising steps of:
placing a substrate on the substrate receiving part;
processing the substrate by supplying a process gas into the process chamber;
supplying at least a water vapor into the process chamber, when the substrate is placed on the substrate receiving part, for
a period of 2 to 30 seconds; and

carrying the substrate on the substrate receiving part out of the process chamber.

US Pat. No. 9,384,945

AUTOMATIC MATCHING UNIT AND PLASMA PROCESSING APPARATUS

TOKYO ELECTRON LIMITED, ...

1. An automatic matching unit for automatically matching an impedance between a load and a radio frequency (RF) power supply
for outputting a RF power having a predetermined frequency, the automatic matching unit comprising:
a first variable capacitor connected in parallel to the load with respect to the RF power supply;
a first stepwise capacitance varying mechanism configured to vary an electrostatic capacitance of the first variable capacitor
in a stepwise manner;

a second variable capacitor connected in series to the load with respect to the RF power supply;
a second stepwise capacitance varying mechanism configured to vary an electrostatic capacitance of the second variable capacitor
in a stepwise manner;

an impedance measuring unit configured to measure an absolute value and a phase of an impedance of a load seen from an output
terminal of the RF power supply; and

a controller configured to variably control electrostatic capacitances of the first variable capacitor and the second variable
capacitor via the first stepwise capacitance varying mechanism and the second stepwise capacitance varying mechanism such
that the measured absolute value and the measured phase of the load impedance obtained by the impedance measuring unit become
close to a predetermined reference absolute value and a predetermined phase, respectively,

wherein the controller includes:
a first matching control unit configured to variably control at least one of the electrostatic capacitances of the first variable
capacitor and the second variable capacitor such that an operating point indicated by impedance coordinates representing the
measured absolute value and the measured phase is moved to be within a first proximity range of a matching point, wherein
said moving uses as a movement target a first reference line passing through the matching point and having a first inclination
or uses a second reference line passing through the matching point and having a second inclination, wherein the first reference
line is formed in a coordinate system having one orthogonal axis representing absolute value of the load impedance and another
orthogonal axis representing phase of the load impedance, wherein the first inclination is defined with respect to the coordinate
system, wherein the second reference line is formed in the coordinate system and wherein the second inclination is defined
with respect to the coordinate system, the first inclination corresponding to variation rates of the absolute value of the
load impedance and the phase of the load impedance in relation to the electrostatic capacitance of the first variable capacitor,
the second inclination corresponding to variation rates of the absolute value of the load impedance and the phase of the load
impedance in relation to the electrostatic capacitance of the second variable capacitor; and

a second matching control unit configured to variably control at least one of the electrostatic capacitances of the first
variable capacitor and the second variable capacitor after the operating point is positioned within the first proximity range,
wherein the second matching control unit is configured to move the operating point to be within a second proximity range of
the matching point with respect to the impedance coordinates by using as a movement target a third reference line that is
formed in the coordinate system and that is perpendicular to the first reference line or to the second reference line with
respect to the coordinate system and that passes through the matching point.

US Pat. No. 9,330,898

SEPARATION SYSTEM, SEPARATION METHOD, PROGRAM AND COMPUTER STORAGE MEDIUM

Tokyo Electron Limited, ...

1. A separation system separating a superposed substrate in which a processing target substrate and a supporting substrate
are joined together with an adhesive into the processing target substrate and the supporting substrate, said separation system
comprising:
a separation processing station performing predetermined processing on the processing target substrate, the supporting substrate,
and the superposed substrate;

a transfer station transferring the processing target substrate, the supporting substrate or the superposed substrate with
respect to said separation processing station;

a transfer unit transferring the processing target substrate, the supporting substrate or the superposed substrate between
said separation processing station and said transfer station; and

an interface station configured to transfer the processing target substrate between said separation processing station and
a post-processing station configured to perform a predetermined post-processing on the processing target substrate separated
in said separation processing station,

wherein said separation processing station comprises:
a separation unit configured to separate the superposed substrate into the processing target substrate and the supporting
substrate each held by a first holding part and a second holding part, respectively, the second holding part being configured
to move both in a vertical direction and a horizontal direction with respect to the first holding part such that the second
holding part is completely separated so as to be spaced apart from the first holding part in an obliquely downward direction,
the first holding part having a main body part in a flat plate shape, and a porous body being provided on a lower surface
side of the main body with a suction space provided above the porous body and connected to a suction pipe and being abutment
with an entire top surface of the processing target substrate;

a first cleaning unit configured to clean the processing target substrate separated in said separation unit; and
a second cleaning unit configured to clean the supporting substrate separated in said separation unit,
wherein said transfer station is configured such that a superposed substrate including a normal processing target substrate
determined to be normal by an inspection process and a superposed substrate including a defective processing target substrate
determined to be defective by the inspection process are transferred into said transfer station, and

wherein said separation system further comprises a control unit configured to control said interface station and said transfer
unit such that a normal processing target substrate is transferred to said post-processing station after being cleaned in
said first cleaning unit and the defective processing target substrate is transferred to said transfer station after being
cleaned in said first cleaning unit.

US Pat. No. 9,324,591

HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD

Tokyo Electron Limited, ...

1. A heat treatment apparatus comprising:
a processing container configured to process an object to be processed;
a heating section, provided outside the processing container, configured to externally heat the processing container;
a holding section configured to hold the object to be processed and to be carried into and out of the processing container;
a holding section transport section configured to carry the holding section into and out of the processing container;
a first temperature sensor, provided between the heating section and the processing container, configured to detect the temperature
of the heating section;

a second temperature sensor, fixed in the processing container, configured to detect the interior temperature of the processing
container;

a third temperature sensor to be carried into and out of the processing container along with the holding section;
a control section for controlling a power to the heating section; and
a temperature estimation section configured to select two of the first temperature sensor, the second temperature sensor and
the third temperature sensor, and estimate the temperature of the object to be processed based on detection temperatures from
the two temperature sensors,

wherein the temperature estimation section determines the temperature T of the object to be processed according to the following
formula:

T=T1×(1??)+T2×?, ?>1,

where T1 represents a detection temperature of one of the first temperature sensor, the second temperature sensor and the third temperature
sensor, T2 represents a detection temperature of another one of the first temperature sensor, the second temperature sensor and the
third temperature sensor, and ? represents a mixing ratio.

US Pat. No. 9,263,298

PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD

TOKYO ELECTRON LIMITED, ...

1. A plasma etching apparatus comprising:
a processing chamber that performs therein a plasma process on a processing target substrate;
a mounting table that is provided within the processing chamber and holds the processing target substrate thereon;
a first heater that heats a central region of the processing target substrate held on the mounting table;
a second heater that heats an edge region around the central region of the processing target substrate held on the mounting
table;

a microwave generator that generates a microwave for plasma excitation;
a dielectric plate that is provided at a position facing the mounting table and introduces the microwave generated by the
microwave generator into the processing chamber;

a reactant gas supply unit that supplies a reactant gas for a plasma process toward only the central region of the processing
target substrate held on the mounting table; and

a control unit that performs a plasma etching process on the processing target substrate while controlling the first heater
and the second heater to heat the central region and the edge region of the processing target substrate held on the mounting
table to different temperatures,

wherein a CD (Critical Dimension) bias at the edge region of the processing target substrate is affected by a reaction product
generated by the plasma etching process performed on the central region of the processing target substrate, and

the control unit is configured to control the first heater and the second heater in consideration of the reaction product,
such that a CD bias at the central region of the processing target substrate and the CD bias at the edge region of the processing
target substrate are substantially the same,

wherein the reactant gas supply unit is located in an upper recess formed in an upper surface of the dielectric plate, with
a bottom surface of the reactant gas supply unit being recessed from a bottom surface of the dielectric plate, such that a
processing space between the processing target substrate and the dielectric plate is extended to the bottom surface of the
reactant gas supply unit recessed from the bottom surface of the dielectric plate, and

a sealing member is provided between a bottom surface of the reactant gas supply unit and an upper surface of a part of the
dielectric plate supporting the reactant gas supply unit.

US Pat. No. 9,252,001

PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A plasma processing method using a processing apparatus having a processing chamber for processing a substrate by a plasma
of a processing gas, the method comprising:
mounting the substrate onto a mounting table provided in a lower portion of the processing chamber;
supplying the processing gas between a first electrode and a second electrode provided in an upper portion of the processing
chamber, wherein the first electrode has a first plurality of linear members horizontally extending in parallel with each
other and the second electrode has a second plurality of linear members horizontally extending in parallel with each other,
the first plurality of linear members being arranged in a one-to-one corresponding manner with the second plurality of linear
members and each of the first plurality of linear members being vertically opposite the corresponding one of the second plurality
of linear members;

applying an RF power between the first electrode and the second electrode so that the processing gas supplied between the
first electrode and second electrode is converted to the plasma of the processing gas; and

exhausting the inside of the processing chamber from a lower portion of the processing chamber to a vacuum level.

US Pat. No. 9,162,247

COATING AND DEVELOPMENT TREATMENT SYSTEM WITH AIRFLOW CONTROL INCLUDING CONTROL UNIT AND MOVABLE AIRFLOW CONTROL PLATE

Tokyo Electron Limited, ...

1. A coating treatment apparatus that supplies a coating solution to a front surface of a rotated substrate and that diffuses
the supplied coating solution to an outer periphery side of the substrate said apparatus comprising:
a substrate holding part holding said substrate;
a rotation part rotating the substrate held on said substrate holding part;
a supply part supplying a coating solution to a front surface of the substrate held on said substrate holding part;
an airflow control plate for changing an air flow above said substrate, said airflow control plate is provided at a predetermined
position above said substrate, said substrate is held on said substrate holding part;

a drive part moving said airflow control plate between the predetermined position and a waiting position not directly above
said substrate held on said substrate holding part; and

a control unit configured to control an operation of said rotation part, an operation of said supply part, and an operation
of said drive part,

wherein said airflow control plate is configured to move to the predetermined position for changing the airflow above said
substrate during rotation by said rotation part,

wherein said control unit is configured to control said supply part to supply the coating solution to the front surface of
said substrate when said substrate is rotated at a first rotation speed by said rotation part,

wherein the first rotation speed diffuses the supplied coating solution to an outer periphery side of the substrate, then
control said supply part to stop the supply of the coating solution at a point in time when said substrate is decelerated
to a second rotation speed lower than the first rotation speed by said rotation part or with said substrate being rotated
at the second rotation speed by said rotation part, and then

control said rotation part to rotate said substrate at a third rotation speed higher than the second rotation speed, the third
rotation speed further diffuses the supplied coating solution to the outer periphery side of the substrate, and

wherein said control unit is configured to control said drive part to change the airflow above said rotated substrate by moving
said airflow control plate to the predetermined position, after said control unit is configured to control said supply part
to stop the supply of the coating solution to the front surface of said substrate when said substrate is decelerated to the
second rotation speed,

wherein said control unit is configured to control said rotation part to rotate, after starting the rotation at the third
rotation speed, the substrate at a fourth rotation speed lower than the third rotation speed, and said control unit is configured
to control said airflow control plate to change the airflow above the rotated substrate by placing said airflow control plate
at the predetermined position by said drive part while rotating the substrate at the fourth rotation speed,

when the substrate is rotated at the first rotation speed and the second rotation speed, the outer periphery of the coating
solution does not reach the outer periphery of the substrate,

when the substrate is rotated at the third rotation speed, the outer periphery of the coating solution reaches the outer periphery
of the substrate.

US Pat. No. 9,153,481

MANGANESE-CONTAINING FILM FORMING METHOD, PROCESSING SYSTEM, ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE

TOKYO ELECTRON LIMITED, ...

1. A manganese-containing film forming method for forming a manganese-containing film on an underlying layer containing silicon
and oxygen, comprising:
degassing the underlying layer formed on a processing target by thermally treating the processing target, the underlying layer
containing silicon and oxygen; and

forming a manganese metal film on the degassed underlying layer by chemical deposition using a gas containing a manganese
compound,

wherein forming a manganese metal film includes:
setting a film formation temperature to be higher than a degassing temperature;
introducing a reducing reaction gas; and
forming a manganese-containing film including an interfacial layer formed in an interface with the underlying layer and a
manganese metal film formed on the interfacial layer, the interfacial layer being comprised of a film of at least one of a
manganese silicate and a manganese oxide.

US Pat. No. 9,136,152

SUBSTRATE TRANSPORT APPARATUS, SUBSTRATE TRANSPORT METHOD, AND RECORDING MEDIUM

Tokyo Electron Limited, ...

1. A substrate transport apparatus which transports a set of a plurality of sets of stacked members to a substrate holding
part containing a plurality of said sets of stacked members, each set of stacked members including two substrates with adjacent
back surfaces thereof stacked via a spacer member, where the plurality of sets of the stacked members are held at predetermined
intervals in an up/down direction, the substrate transport apparatus comprising:
a first fork disposed to be movable in a forward/backward direction to the Substrate holding part to transport the set of
stacked members to or receive the set of stacked members from the substrate holding part;

a second fork arranged to be reversible and disposed above the first fork to be movable in a forward/backward direction to
an accommodating part that accommodates the substrates and the spacer members, to transport the substrates or a spacer member
between the accommodating part and the first fork;

a first grip module disposed on a first surface of the second fork to hold and support the substrates in a state where the
first surface of the second fork faces downward and the first surface of the second fork is located above the substrates;
and

a second grip module disposed on the first surface of the second fork on the same side as the first grip module to hold and
support the spacer member in the state where the first surface of the second fork faces downward and the first surface of
the second fork is located above the substrates.

US Pat. No. 9,425,093

COPPER WIRING FORMING METHOD, FILM FORMING SYSTEM, AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A method of forming a Cu wiring in contact with tungsten wiring, by filling Cu into a recess formed in a substrate, the
method comprising:
removing a tungsten oxide formed on a surface of the tungsten wiring;
forming a nitriding preventing film at least on the surface of the tungsten wiring in the recess;
forming a barrier film that prevents diffusion of Cu, on a surface in the recess from above the nitriding preventing film;
forming a liner film on the barrier film; and
filling a Cu film on the liner film,
wherein the barrier film is a metal nitride film or a metal carbonitride film and wherein the nitriding preventing film is
a tantalum film.

US Pat. No. 9,195,138

LIQUID PROCESSING APPARATUS, LIQUID PROCESSING METHOD AND STORAGE MEDIUM

TOKYO ELECTRON LIMITED, ...

1. A liquid processing apparatus comprising:
a first processing region and a second processing region arranged in a left-right direction, each for accommodating therein
a substrate horizontally and performing therein a process on the substrate by a processing solution from a nozzle;

a rotary body positioned at a rear side of an arrangement of the first and the second processing regions, and configured to
be rotatable about a vertical axis;

a plurality of processing nozzles provided on the rotary body such that the plurality of processing nozzles rotate with the
rotary body while kept in a standby state at an outside of the first processing region and the second processing region, commonly
used for the first processing region and the second processing region, and configured to supply different kinds of processing
solutions to the substrate, respectively;

a nozzle transfer device, having a nozzle holder capable of being moved back and forth, provided on the rotary body such that
the nozzle transfer device rotates with the rotary body and the plurality of processing nozzles and configured to transfer
a processing nozzle selected from the plurality of processing nozzles into a selected one of the first and the second processing
regions while holding the selected processing nozzle by the nozzle holder; and

a rotation driving unit configured to rotate the rotary body so as to allow a front of the nozzle holder in a forward/backward
direction thereof to face the selected one of the first and the second processing regions.

US Pat. No. 9,177,838

LIQUID PROCESS APPARATUS AND LIQUID PROCESS METHOD

Tokyo Electron Limited, ...

1. A liquid process apparatus comprising:
a substrate holding unit configured to hold a substrate in a horizontal direction;
a nozzle configured to supply a process liquid to the substrate held by the substrate holding unit;
a cup located radially outside around the substrate when the substrate is held by the substrate holding unit, and configured
to receive the process liquid supplied to the substrate by the nozzle;

a top plate that moves in the horizontal direction between an advanced position, in which the top plate covers, from above,
the substrate held by the substrate holding unit, and a retracted position, in which the top plate is retracted from the advanced
position; and

an air hood configured to supply a purified gas downward and move in the vertical direction between an air hood lower position,
in which the air hood covers, from above, the substrate held by the substrate holding unit, and an air hood upper position
located above the air hood lower position.

US Pat. No. 9,099,507

VERTICAL HEAT TREATMENT APPARATUS AND METHOD FOR COOLING THE APPARATUS

Tokyo Electron Limited, ...

1. A vertical heat treatment apparatus comprising:
a furnace body having a heating section in the inner circumferential surface;
a treatment container for housing a plurality of objects to be treated and which is disposed in the furnace body and defines
a space between it and the furnace body;

a plurality of air outlets provided in a vertical direction in an air outlet formation area of the furnace body;
an air supply line, connected to the furnace body, for supplying a cooling air to the space via the plurality of air outlets;
an air exhaust line, connected to the furnace body, for exhausting the cooling air from the space;
a blower provided in at least one of the air supply line and the air exhaust line;
an air supply line valve mechanism and an air exhaust line valve mechanism provided in the air supply line and the air exhaust
line, respectively;

a pressure detection system for detecting the pressure in the space between the furnace body and the treatment container;
and

a control section for controlling, based on a detection signal from the pressure detection system, at least one of the blower
provided in at least one of the air supply line and the air exhaust line, the air supply line valve mechanism and the air
exhaust line valve mechanism to keep the space at a slightly negative pressure, wherein the air outlet formation area is formed
in the vertical direction in the furnace body by the plurality of air outlets, and the pressure detection system is provided
in a space area that is formed in the vertical direction in the furnace body, corresponding to the air outlet formation area,
of the space between the furnace body and the treatment container.

US Pat. No. 9,214,364

SUBSTRATE CLEANING APPARATUS AND VACUUM PROCESSING SYSTEM

TOKYO ELECTRON LIMITED, ...

1. A substrate cleaning apparatus comprising:
a processing chamber comprising a gas exhaust port;
a supporting unit configured to support a substrate, said supporting unit being provided in said processing chamber;
one or more nozzle units, each configured to eject gas clusters-to remove unnecessary substances from the substrate; and
a moving mechanism configured to change relative positions of the supporting unit and the nozzle units during ejecting the
gas clusters,

wherein each nozzle unit discharges a cleaning gas having a pressure higher than that in the processing chamber so that the
cleaning gas is adiabatically expanded to form aggregates of atoms and/or molecules,

wherein said substrate cleaning apparatus further comprises a cleaning gas supply source for supplying said cleaning gas,
a flow rate control unit for controlling a flow rate of said cleaning gas, a first gas channel through which said cleaning
gas is supplied and a second gas channel through which a pressure increasing gas is supplied,

wherein each nozzle unit comprises a pressure chamber to which said first and said second gas channels are connected,
wherein said nozzle units comprise a nozzle unit disposed below said substrate, and
wherein said pressure chamber comprises a base end side to which said first and said second gas channels are connected and
a leading end side having a discharge port facing said substrate and configured to eject said gas clusters thereto.

US Pat. No. 9,087,798

ETCHING METHOD

TOKYO ELECTRON LIMITED, ...

1. An etching method of forming a dummy gate of a fin-type field effect transistor with a target object including multiple
fins, masks formed on the multiple fins, and a gate material deposited between the multiple fins and deposited on upper surfaces
of the masks, the etching method comprising:
a first etching process of etching the gate material until the upper surfaces of the masks are exposed; and
a second etching process of etching the gate material deposited between the multiple fins by using surface wave plasma,
wherein a pressure in the second etching process is about 50 mTorr (about 6.67 Pa) or more, and
in the second etching process, a frequency of a power to be applied to a mounting table configured to mount thereon the target
object is in a range of about 10 Hz or more to about 200 Hz or less, and the power is pulse-modulated such that a duty ratio
as a ratio of an ON-time to a pulse cycle is about 50% or less.