US Pat. No. 9,068,114

METAL FLUORIDE EUTECTIC, NEUTRON SCINTILLATOR AND NEUTRON IMAGING DEVICE

TOKUYAMA CORPORATION, Sh...

1. A metal fluoride eutectic comprising a lithium fluoride crystal phase and a Ca1-xSrxF2 (where x denotes a number greater than 0, but not larger than 1) crystal phase.

US Pat. No. 9,073,069

FLUID INJECTION DEVICE

SEIKO EPSON CORPORATION, ...

1. A fluid injection device comprising:
a pulse generation section that includes a fluid chamber for generating a pulsed flow, in which pressure inside the fluid
chamber increases when the pulsed flow is generated;

an inlet flow passage and an outlet flow passage that are connected to the fluid chamber; and
a fluid injection opening formed at an extension of the outlet flow passage,
wherein inertance on the inlet flow passage is greater than inertance on the outlet flow passage.

US Pat. No. 9,310,619

OPTICAL FILM

Sharp Kabushiki Kaisha, ...

1. An optical film comprising, in sequence from a light entry side of the optical film to a light emission side of the optical
film:
a plurality of first prisms;
a first phase-difference plate; and
a polarized-light separating element, wherein
the plurality of first prisms each having (i) a first surface through which light enters the first prism and (ii) a second
surface that reflects the light, having entered the first prism through the first surface, toward the light emission side;

the optical film further comprising, between the plurality of first prisms in an in-plane direction of the optical film, a
light reflecting section that reflects light, having been reflected by the polarized-light separating element toward the light
entry side, back toward the light emission side;

the first phase-difference plate is a ¼ wavelength plate;
the light reflecting section is a second prism having a third surface and a fourth surface each of which reflects light;
an angle between the third surface and the fourth surface is larger than an angle between the first surface and the second
surface; and

the optical film further comprises a second phase-difference plate between the ¼ wavelength plate and the second prism.

US Pat. No. 9,256,802

OBJECT OR SHAPE INFORMATION REPRESENTATION METHOD

NEC CORPORATION, Tokyo (...

1. An image data processing method for processing, by a processing unit, image data of an object or a shape by comparing the
image data with comparison image data stored in an image information memory to determine a degree of similarity of the object
or the shape and the comparison image data, comprising:
extracting contour information of an entirety or a part of the object or the shape from the image data;
stepwise smoothing the contour information of the entirety or the part of the object or the shape over a plurality of stages
to obtain smoothed contour lines on each stage;

processing the contour information represented by each smoothed contour line on each stage to divide a contour shape represented
by the contour information into one or a plurality of divided curves at each inflection point of each smoothed contour line
by calculating a degree of curvature of each curve to store the degree of the curvature as information of each divided curve
in the information memory; and

obtaining a feature amount of each divided curve on each of the stages to store the feature amount of the smoothed contour
lines in the information memory to compare the feature amount with the corresponding feature amount of the comparison image
data and to determine the degree of the similarity of the image data with the comparison image data.

US Pat. No. 9,087,980

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

KABUSHIKI KAISHA TOSHIBA,...

11. A magnetoresistive element comprising:
a base layer; and
a stacked structure provided on the base layer, the stacked structure including: a first magnetic layer including a first
magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including
MnxGa100-x (45?x<64 atomic %); a second magnetic layer including a second magnetic film having an axis of easy magnetization in a direction
perpendicular to a film plane; a first nonmagnetic layer provided between the first magnetic layer and the second magnetic
layer, and containing at least one element selected from the group consisting of Mg, Ca, Ba, Al, Ag, Cu, Be, Sr, Zn, and Ti;
and a first interfacial layer provided between the first magnetic layer and the first nonmagnetic layer, the first interfacial
layer including a Heusler alloy,

a magnetization direction of the first magnetic layer being changeable,
wherein the second magnetic layer has a fixed magnetization direction,
wherein the magnetoresistive element further comprises: a third magnetic layer provided on the opposite side of the second
magnetic layer from the first nonmagnetic layer, having an axis of easy magnetization in a direction perpendicular to a film
plane, and having a magnetization direction antiparallel to the magnetization direction of the second magnetic layer; and
a second nonmagnetic layer provided between the second ferromagnetic layer and the third ferromagnetic layer,

wherein MS2 represents a saturation magnetization of the second magnetic layer, t2 represents a film thickness of the second magnetic layer, MS3 represents a saturation magnetization of the third magnetic layer, and t3 represents a film thickness of the third magnetic layer, and the following relationship is satisfied

MS2×t2

US Pat. No. 9,122,097

BACKLIGHT SYSTEM AND LCD DEVICE USING THE SAME

Sharp Kabushiki Kaisha, ...

1. A backlight system comprising:
a light-emitting section for emitting beams of light at different dominant wavelengths from one another; and
an imaging optical system for causing the beams of light emitted from the light emitting section to be converged,
said backlight system irradiating a liquid crystal panel with the beams of light, which have passed through the imaging optical
system,

the liquid crystal panel including a plurality of pixels arrayed at a predetermined pitch, each of the pixels being configured
to include a plurality of picture elements corresponding to respective colors,

the imaging optical system including a first lens array and a second lens array, wherein the first lens array is an array
of first lenses arrayed at a predetermined pitch and the second lens array is an array of second lenses arrayed at a predetermined
pitch,

the first lenses (i) separating, by color, the beams of light emitted from the light emitting section, and (ii) causing the
separated beams of light to be converged at a pitch same as a pitch at which the picture elements are arrayed,

the second lenses being (i) provided in one-to-one correspondence to the picture elements, and (ii) arranged such that the
second lenses have their respective focal points at positions onto which the beams of light which have passed through the
first lenses are converged,

the second lenses deflecting the beams of light, which have passed through the first lenses, in a substantially vertical direction
with respect to a display surface of the liquid crystal panel so that the liquid crystal panel is irradiated with the deflected
light.

US Pat. No. 9,219,227

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

KABUSHIKI KAISHA TOSHIBA,...

1. A magnetoresistive element comprising:
a first magnetic layer including MnxGa100-x (45?x<64 atomic %);

a second magnetic layer including MnyGa100-y (45?y<64 atomic %);

a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer; and
an interfacial layer provided between the first magnetic layer and the first nonmagnetic layer, and/or between the second
magnetic layer and the first nonmagnetic layer, the interfacial layer comprising a Heusler alloy including Mn,

the first and second magnetic layers comprising different Mn composition rates from each other, the first magnetic layer having
a smaller Mn concentration than the second magnetic layer, a magnetization direction of the first magnetic layer being changeable
and a magnetization direction of the second magnetic layer being unchangeable.

US Pat. No. 9,272,921

METHOD FOR PRODUCING ALKALI METAL NIOBATE PARTICLES, AND ALKALI METAL NIOBATE PARTICLES

Sakai Chemical Industry C...

1. A particulate alkali metal niobate represented by formula (1):
MNbO3  (1)

wherein M represents one element selected from alkali metals, the particulate alkali metal niobate having a substantially
rectangular cuboid shape,

wherein the substantially rectangular cuboid shape has a longest side and a shortest side,
a length of the longest side represented by an index Lmax is in a range from 0.10 to 25 ?m,

a length of the shortest side represented by an index Lmin is in a range from 0.050 to 15 ?m, and

a relative standard deviation of the Lmax in the particulate alkali metal niobate is in a range from 0.22 to 0.32.

US Pat. No. 9,238,614

FULLERENE DERIVATIVE AND METHOD FOR MANUFACTURING A FULLERENE DERIVATIVE

SHOWA DENKO K.K., Tokyo ...

1. A fullerene derivative represented by the following formula (1):

wherein FLN is a fullerene backbone, R1 is a substituted or non-substituted aralkyl group with a carbon number ranging from 2 to 24, and Ar1 is a substituted or non-substituted one selected from the group consisting of a phenyl group, 2-thienyl group, and a bithienyl
group with a carbon number less than or equal to 24,

wherein FLN is selected from the group consisting of C60, C70, C76, C78, C82, C84, C90, C94, C96, C120 and C200,

wherein when the R1 is the substituted aralkyl group, the substituent of R1 is selected from a group consisting of an aryl group, an alkoxy group, an ester-structure-containing group, a substituted
or non-substituted amino group, an alkenyl group, an alkynyl group and a halogen atom, and

wherein when the Ar1 is the substituted one, the substituent of Ar1 is selected from a group consisting of an alkyl group, an aryl group, an alkoxy group, an ester-structure-containing group,
a substituted or non-substituted amino group, an alkenyl group, an alkynyl group and a halogen atom.

US Pat. No. 9,060,988

METHOD FOR TREATING PULMONARY FIBROSIS USING A PHARMACEUTICAL COMPOSITION CONTAINING STANNIOCALCIN 1 (STC1)

Tohoku University, Miyag...

1. A method for treating and/or suppression of progression of pulmonary fibrosis, comprising: administering to a subject in
need thereof a composition comprising stanniocalcin 1 (STC1).

US Pat. No. 9,048,619

LASER DIODE ASSEMBLY

Sony Corporation, Tokyo ...

1. A laser diode assembly comprising:
a mode-locked laser diode device;
a diffraction grating that outputs 0-order diffracted light outside;
an external resonator composed of a reflecting mirror that reflects primary or more order diffracted light from the diffraction
grating and returns the reflected light to the mode-locked laser diode device thorough the diffraction grating;

an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging laser light
outputted from the mode-locked laser diode device on the external resonator; and

a plurality of apertures provided between the diffraction grating and the external resonator and regulating entrance of laser
light into the external resonator,

wherein the reflecting minor composing the external resonator is formed with a concave mirror, and
wherein curvature radius of the concave mirror is equal to distance from the diffraction grating to the concave mirror.

US Pat. No. 9,217,552

ILLUMINATION DEVICE

Sharp Kabushiki Kaisha, ...

1. A lighting device, comprising:
a surface light source having a light exit surface;
a first lens having a first focal point, the first lens being provided on the light exit surface side of the surface light
source; and

a second lens having a second focal point, the second lens being provided on a light exit surface side of the first lens,
the surface light source, the first lens, and the second lens being configured such that a first virtual image is formed by
the first lens and a second virtual image is formed by the second lens,

wherein the first virtual image is formed between the second focal point and the first lens,
the second focal point is on a side opposite to the surface light source relative to a position which is distant from a principal
point of the second lens by a predetermined focal length f?,

the predetermined focal length f? satisfies
I?=(D/(?+D))·f?where I? is the distance between the principal point of the second lens and a position of the first virtual image, D is an
effective diameter of the second lens, and ? is a light source size factor which is either one of a size of the light exit
surface of the surface light source or an arrangement pitch of a plurality of light-emitting elements included in the surface
light source, and
at least either of a light entry surface or a light exit surface of the first lens or the second lens includes a non-revolution
surface as a lens surface, and a plurality of non-concentric boundary lines whose curvatures vary discontinuously are provided
in the non-revolution surface.

US Pat. No. 9,215,089

TOUCH SENSOR SYSTEM

TOHOKU UNIVERSITY, Senda...

1. A touch sensor system comprising:
one or more buses including a power supply line and a signal line;
a plurality of touch sensor devices that are disposed on each of the bus and supplied with power from the bus; and
an information integrating device that is connected to all the buses and integrates information from the plurality of touch
sensor devices, wherein the touch sensor device comprises:

a sensor unit that outputs an analog sensor signal, the analog sensor signal changing according to an action from a detecting
object; and

a signal processing unit that transmits a sensor data signal to the information integrating device through the bus, the sensor
data signal being the processed analog sensor signal from the sensor unit,

wherein the signal processing unit comprises:
a digital converting unit that digitally converts the analog sensor signal;
a threshold evaluating unit that gives a start permission of a signal process when a sensor value by the sensor unit exceeds
a preset threshold;

an ID adding unit that adds a transmitter identification number to the sensor data signal, the transmitter identification
number being previously added to itself; and

a data transmitting unit that outputs the sensor data signal to a signal line of the bus; and
bus state evaluating unit that evaluates a state of the signal line of the bus; and
an initial transmission command unit that commands transmission of the transmitter identification number at the time of detecting
power-on, wherein the bus state evaluating unit stops signal transmission of the data transmitting unit when the bus is busy,
and permits the signal transmission of the data transmitting unit when the bus is free,

further evaluates the state of the bus again after preset waiting time has elapsed when the bus is busy, and
increases standby time at a predetermined ratio when the waiting time is continuously generated, and
the information integrating device includes a function to switch power on and off and also receives the transmitter identification
number transmitted from each of the touch sensor devices at the time of the power-on and builds a communication network based
on the received transmitter identification number.

US Pat. No. 9,322,818

FUEL PHYSICAL PROPERTY DETERMINATION METHOD AND FUEL PHYSICAL PROPERTY DETERMINATION DEVICE

TOHOKU UNIVERSITY, (JP) ...

1. A fuel physical property determination method to determine a physical property of a test fuel, the method comprising:
a test fuel flame-imaging step of obtaining first imaging data by imaging flames formed inside a test tube by supplying a
pre-mixed gas containing the test fuel and an oxidant agent, to the test tube which includes an internal flow path and in
which a temperature distribution is formed; and

a physical property determination step of determining the physical property of the test fuel by comparing the first imaging
data obtained in the test fuel flame-imaging step and second imaging data obtained by imaging flames ignited inside the test
tube by supplying a pre-mixed gas containing a standard-mixed fuel and an oxidant agent, to the test tube, the standard-mixed
fuel having a known physical property,

wherein the internal flow path of the test tube has a diameter set to be smaller than a flame-quenching distance at normal
temperature, and

in the physical property determination step, data denoting a generation position of the flames in the first imaging data and
data denoting a generation position of the flames in the second imaging data are used when the first and second imaging data
are compared.

US Pat. No. 9,299,435

NONVOLATILE CONTENT ADDRESSABLE MEMORY AND METHOD FOR OPERATING SAME

NEC CORPORATION, Tokyo (...

1. A nonvolatile content addressable memory configured to compare search data that is input from an outside with storage data
that is stored in advance,
the nonvolatile content addressable memory comprising a plurality of word circuits, each of the plurality of word circuits
comprising a plurality of segments having an order relation, each of the plurality of segments comprising one or more memory
cells, each of the one or more memory cells comprising a nonvolatile storage element,

the each of the plurality of segments comprising power switch means for turning on/off a power of a memory cell of the segment,
wherein, during stand-by, all the power switch means are turned off, and
wherein, in search operation, the power switch means is turned on as necessary for each of the plurality of segments.

US Pat. No. 9,095,039

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOHOKU UNIVERSITY, Senda...

1. A plasma processing apparatus comprising:
a decompression chamber that includes therein a mounting table configured to mount a processing target object thereon; and
a plasma space in which plasma is generated, the plasma space being formed above the mounting table;

a transmission path comprising a first coaxial waveguide through which a high frequency power for exciting plasma is supplied
into the decompression chamber;

a waveguide path, connected to the transmission path, having a slit-shaped opening toward the plasma space;
a matching device which is connected to a high frequency power supply;
an adjusting unit configured to adjust an effective height of the waveguide path and adjust wavelength of a high frequency
power propagating in the waveguide path in a lengthwise direction of the slit-shaped opening;

a reflectometer connected to the first coaxial waveguide and configured to measure a reflection or an impedance of a high
frequency power propagating in the first coaxial waveguide; and

a controller configured to adjust a wavelength of the high frequency power propagating in the waveguide path in the lengthwise
direction of the slit-shaped opening based on the reflection or the impedance measured by the reflectometer,

wherein both ends of the waveguide path in the lengthwise direction of the slit-shaped opening are not short-circuited.

US Pat. No. 9,045,821

LAMINATE, METHOD FOR PRODUCING SAME, AND FUNCTIONAL ELEMENT USING SAME

Sumitomo Metal Mining Co....

1. A laminate comprising:
a substrate;
a buffer layer selected from the group consisting of a gallium oxide thin film, a gallium, indium oxide thin film, a gallium,
indium, aluminum oxide thin film, a gallium oxynitride thin film, a gallium indium oxynitride thin film, and a gallium indium
aluminum oxynitride thin film, formed on the substrate; and

a transparent conductive film layer made of an oxide thin film, mainly composed of titanium oxide, containing at least one
element selected from the group consisting of niobium, tantalum, molybdenum, arsenic, antimony and tungsten, and consisting
of an anatase phase grown by epitaxial growth with twelve-fold symmetry formed on the buffer layer.

US Pat. No. 9,219,346

LASER DIODE ASSEMBLY

Sony Corporation, Tokyo ...

1. A laser diode assembly comprising:
a mode-locked laser diode device configured to emit a diffusion light beam;
a diffraction grating that configures an external resonator, and is configured to return primary or more order diffracted
light to the mode-locked laser diode device, and output 0-order diffracted light outside;

an imaging section provided between the mode-locked laser diode device and the diffraction grating, and configured to convert
the diffusion light beam into a focused light beam that is not a parallel light beam to form an image of a light output end
face of the mode-locked laser diode device on the diffraction grating;

a reflecting mirror configured to reflect the 0-order diffracted light outputted from the diffraction grating; and
a collimation lens positioned and configured to convert light outputted from the reflecting mirror into a parallel light beam,
wherein a distance between the diffraction grating and the reflecting mirror is changed while the position relation between
the diffraction grating and the reflecting mirror is kept in parallel with each other, and

wherein the distance between the diffraction grating and the reflecting mirror is expressed as follows:
d0·sin(?0)/sin(?0+?0)

where d0 represents the distance between the diffraction grating and the reflecting mirror when a wavelength as reference is outputted,
?0 represents an incident angle of laser light to the diffraction grating when the wavelength as reference is outputted, and
?0 represents an angle change amount of the diffraction grating to the wavelength as reference.

US Pat. No. 9,134,189

DYNAMIC QUANTITY SENSOR AND DYNAMIC QUANTITY SENSOR SYSTEM

Toyota Jidosha Kabushiki ...

1. A dynamic quantity MEMS sensor comprising:
a force receiving portion;
a first movable portion that rotates in a first rotational direction around a first rotational axis according to dynamic quantity
in a first direction that the force receiving portion receives, and rotates in the first rotational direction around the first
rotational axis according to dynamic quantity in a second direction different from the first direction that the force receiving
portion receives;

a second movable portion that rotates in a second rotational direction around a second rotational axis according to the dynamic
quantity in the first direction that the force receiving portion receives, and rotates in an opposite direction to the second
rotational direction around the second rotational axis according to the dynamic quantity in the second direction that the
force receiving portion receives,

a first coupling portion that couples the force receiving portion and the first movable portion;
a second coupling portion that couples the force receiving portion and the second movable portion; and
a support portion that supports the first movable portion and the second movable portion rotatably around the first rotational
axis and the second rotational axis,

wherein the first coupling portion and the second coupling portion have a flexible and twistable beam shape, and
at least the dynamic quantity in the first direction and the dynamic quantity in the second direction can be detected.

US Pat. No. 9,324,556

FIELD ELECTRON EMISSION FILM, FIELD ELECTRON EMISSION DEVICE, LIGHT EMISSION DEVICE, AND METHOD FOR PRODUCING THEM

TOHOKU UNIVERSITY, Miyag...

1. A field electron emission film comprising from 60 to 99.9% by mass of tin-doped indium oxide and from 0.1 to 20% by mass
of carbon nanotubes, having such a structure that grooves having a width in a range of from 0.1 to 50 ?m are formed in a total
extension of 2 mm or more per 1 mm2 on a surface of the film, and carbon nanotubes are exposed on a wall surface of the grooves.

US Pat. No. 9,153,938

LASER DIODE ASSEMBLY AND SEMICONDUCTOR OPTICAL AMPLIFIER ASSEMBLY

Sony Corporation, Tokyo ...

1. A laser diode assembly comprising:
a mode-locked laser diode device, where a light output spectrum shows long-wavelength shift by self-phase modulation;
an external resonator; and
a wavelength selective element positioned outside an optical path between the mode-locked laser diode device and the external
resonator,

wherein a light output spectrum of the pulsed laser beam emitted through the external resonator from the mode-locked laser
diode device contains a plurality of peaks, and one of the peaks including a longer wavelength component of a pulsed laser
beam emitted through the external resonator from the mode-locked laser diode device is extracted by the wavelength selective
element, and output to the outside.

US Pat. No. 9,388,337

METAL FLUORIDE CRYSTAL, LIGHT EMITTING ELEMENT, SCINTILLATOR, METHOD OF DETECTING NEUTRON, AND METHOD OF PRODUCING METAL FLUORIDE CRYSTAL

TOKUYAMA CORPORATION, Ya...

1. A neutron scintillator, comprising a metal fluoride crystal including a crystal represented by a chemical formula LiM1M2F6 wherein Li includes 6Li, M1 represents at least one alkaline earth metal element selected from the group consisting of Mg, Ca, Sr, and Ba, and M2 represents at least one metal element selected from the group consisting of Al, Ga, and Sc, the crystal containing not less
than 0.02 mol % of Eu, and the crystal having a concentration of Eu2+ of less than 0.01 mol %.

US Pat. No. 9,294,698

SOLID-STATE IMAGE PICKUP APPARATUS

Tohoku University, Miyag...

1. A solid-state image pickup apparatus comprising:
a plurality of two-dimensionally arrayed unit pixels, each of the unit pixels including an optical-electrical conversion element
performing optical-electrical conversion of an incident light;

a charge conversion element and an output terminal provided for each of a plurality of pixel groups, each pixel group including
one or more of the unit pixels, the charge conversion element converting a signal charge optical-electrical converted by the
optical-electrical conversion element of each of the unit pixels in the pixel group to voltage or current, and the output
terminal being capable of outputting a noise signal that occurs at the time of resetting the charge conversion element and
a signal-noise sum signal obtained by adding a signal that has occurred by optical-electrical conversion to the noise signal
separately;

a plurality of first transfer lines to which the output terminals of a plurality of the pixel groups are connected in common,
the plurality of first transfer lines being capable of holding voltages based on signals outputted from the output terminals;

a plurality of second transfer lines provided in parallel with the first transfer lines, the plurality of second transfer
lines being capable of holding a voltage;

inter-transfer-line capacitive elements connecting the second transfer lines and the first transfer lines;
a reset switch resetting each of the second transfer lines to a reset voltage;
a readout switch provided for each of the second transfer lines; and
a third transfer line to which the second transfer lines are connected in parallel via the readout switches, respectively.

US Pat. No. 9,230,799

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE

TOHOKU UNIVERSITY, Senda...

1. A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer, the
method comprising:
forming a first nitride layer on a substrate;
forming a second nitride layer on the first nitride layer;
forming a field oxide layer on the second nitride layer;
forming a gate insulating film in which an Al2O3 film is formed to penetrate the field oxide layer, the first nitride layer, and the second nitride layer, the Al2O3 film is subject to radical oxidation, and

then a SiO2 film is formed by using microwave plasma, the SiO2 film penetrating the field oxide layer and the second nitride layer only, and the SiO2 film located between the Al2O3 film and a gate electrode, wherein

the gate electrode is at least partially located in an opening of the SiO2 film of the gate insulating film, and

in the forming the gate insulating film, the microwave plasma is generated by using microwaves at a frequency of 2.45 GHz
by using a radial line slot antenna.

US Pat. No. 9,324,429

SEMICONDUCTOR STORAGE DEVICE

TOHOKU UNIVERSITY, Senda...

1. A semiconductor storage device, comprising:
an input controller including a register, a comparator, and a mode controller; and
a content-addressable memory block connected to the input controller, the content-addressable memory block comprising a plurality
of word circuits, wherein

each of the word circuits comprises: a k-bit 1st-stage sub-word circuit connected to a first search line of the input controller;
an (n-k)-bit (where n-k>k) 2nd-stage sub-word circuit connected to a second search line of the input controller, and a segmentation
circuit connected between the 1st-stage sub-word circuit and the 2nd-stage sub-word circuit,

the 2nd-stage sub-word circuit comprises: a plurality of local match circuits, each having a sub-sub-word circuit connected
thereto; and a global match circuit,

the input controller sends a search word to the sub-sub-word circuit of each of the local match circuits in parallel,
the local match circuits judge a match between the search word and a stored word in the sub-sub-word circuit of each of the
local match circuits, and

the local match circuits output to the global match circuit.

US Pat. No. 9,246,104

FULLERENE DERIVATIVE, METHOD OF MANUFACTURING FULLERENE DERIVATIVE AND SOLAR CELL

SHOWA DENKO K.K., Tokyo ...

1. A fullerene derivative represented by the following formula (1):

wherein “FLN” represents a fullerene core selected from a group consisting of fullerene C60, fullerene C70, fullerene C76, fullerene C78, fullerene C82 and fullerene C84,

wherein R1 represents substituted or non-substituted C1-C24 alkyl group or substituted or non-substituted C7-C24 aralkyl group,

the aralkyl group being selected from a group consisting of a benzyl group, a 2-phenylethyl group, a 1-phenylethyl group and
a 3-phenylpropyl group,

when the alkyl group or the aralkyl group is substituted, the substituent group being selected from a group consisting of
a C1-C10 hydrocarbon group, a C1-C10 alkoxy group, a C6-C12 aryloxy group, a C1-C10 acyloxy group, a C1-C10 oxycarbonyl group, a C1-C10 acyl group, a nitro group, an amino group, an amide group, a nitrile group, a silyl group, a phosphine group and a halogen
atom;

wherein R2 and R3 independently represent a hydrogen atom or substituted or non-substituted C1-C24 hydrocarbon group but excluding a case where both of R2 and R3 are hydrogen atoms, and R2 and R3 may combine together to form a ring,

the C1-C24 hydrocarbon group being selected from a group consisting of an alkyl group, an aromatic group, and an aralkyl group,

the aromatic group being selected from a group consisting of a phenyl group, an indenyl group, a naphthyl group, an anthracenyl
group, a phenanthrenyl group, a fluorenyl group and a pyrenyl group,

the aralkyl group being selected from a group consisting of a benzyl group, a 2-phenylethyl group, a 1-phenylethyl group and
a 3-phenylpropyl group,

when the C1-C24 hydrocarbon group is substituted, the substituent group being selected from a group consisting of a C1-C10 hydrocarbon group, a C1-C10 alkoxy group, a C6-C12 aryloxy group, a C1-C10 acyloxy group, an aldehyde group, a C1-C10 oxycarbonyl group, a C1-C10 acyl group, a nitro group, an amino group, an amide group, a nitrile group, a silyl group, a phosphine group and a halogen
atom.

US Pat. No. 9,318,170

STORAGE DEVICE, MEMORY CELL, AND DATA WRITING METHOD

Tohoku University, Senda...

1. A storage device comprising:
a memory cell comprising a first storage circuit with a write time t1 and a data retention time ?1 and a second storage circuit with a write time t2 and a data retention time ?2 (t1
a power control circuit for controlling power supply to the memory cell; and
a write data supply circuit for supplying write data to the memory cell,
wherein a data storage node of the first storage circuit and a data storage node of the second storage circuit are connected
each other;

the write data supply circuit supplies write data to the memory cell to write the data on the first storage circuit over a
write time tW that is longer than the write time t1 which is a time necessary for writing data on the first storage circuit and that is shorter than the write time t2 which is a time necessary for writing data on the second storage circuit, and stops the supply of the write data after the
elapse of write time tW; and

the power control circuit supplies power to the memory cell over a time that is longer than the write time t2 of the second storage circuit when the write data is supplied from the write data supply circuit to the memory cell, writes,
on the second storage circuit, the data written on the first storage circuit once the supply of the write data is stopped,
and stops the supply of the power to the memory cell after a lapse of the write time t2 of the second storage circuit following start of the supply of the write data.

US Pat. No. 9,133,951

GASKET TYPE ORIFICE AND PRESSURE TYPE FLOW RATE CONTROL APPARATUS FOR WHICH THE ORIFICE IS EMPLOYED

Fujikin Incorporated, Os...

1. A gasket type orifice device, comprising:
(a) a first orifice base made of metal and provided with a complementary convex two-step sealing structure;
(b) a second orifice base made of metal and provided with a complementary concave two-step sealing structure; and
(c) an orifice plate provided with an orifice hole formed therein, and disposed between the complementary convex two-step
sealing structure and the complementary concave two-step sealing structure,

wherein the convex and concave two-step sealing structures are complementary to one another and hermetically sealable about
the orifice plate when force is applied to the first and second orifice bases by a plurality of blocks, and

wherein the first orifice base, the second orifice base and the orifice plate are all made of the same Ni—Cr alloy material.

US Pat. No. 9,096,937

METHOD FOR ETCHING FILM HAVING TRANSITION METAL

TOKYO ELECTRON LIMITED, ...

1. A method of etching a transition metal-containing film using a substrate processing apparatus, wherein the substrate processing
apparatus comprises:
a processing container configured to define a processing chamber and a plasma generation chamber; and
a shielding unit provided between the processing chamber and the plasma generation chamber and formed with a plurality of
openings to communicate the processing chamber and the plasma generation chamber with each other, the shielding unit being
configured to give an electron to the ions being passed through the openings of the shielding unit, thereby neutralizing the
ions, and

wherein the method comprises:
supplying neutral particles of oxygen atoms to the processing chamber in which a workpiece is accommodated by generating plasma
of a first gas containing oxygen in the plasma generation chamber and passing the generated plasma of the first gas containing
oxygen through the openings of the shielding unit, thereby oxidizing the transition metal-containing film;

supplying a second gas to the processing chamber to complex transition metal in the transition metal-containing film oxidized
with the supplying of neutral particles of oxygen atoms to the processing chamber; and

supplying neutral particles of rare gas atoms to the processing chamber by generating plasma of a rare gas and passing the
generated plasma of the rare gas through the openings of the shielding unit, thereby removing complexes formed at the supplying
a second gas to the processing chamber.

US Pat. No. 9,255,010

BORIDE HAVING CHEMICAL COMPOSITION NA—SI—B, AND POLYCRYSTALLINE REACTION SINTERED PRODUCT OF BORIDE AND PROCESS FOR PRODUCTION THEREOF

TOHOKU UNIVERSITY, Miyag...

1. A ternary boride represented by formula NaxSiyBz, wherein 0

US Pat. No. 9,299,714

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SK HYNIX INC., Icheon (K...

1. A method of manufacturing a semiconductor device, the method comprising:
alternately forming first material layers and second material layers;
forming channel holes by etching the first material layers and the second material layers;
forming first recessed regions by etching the first material layers exposed to inner walls of the channel holes by a first
thickness;

forming floating gates in the first recessed regions;
forming second recessed regions by etching the second material layers exposed to the inner walls of the channel holes by a
second thickness; and

forming a channel layer having protrusions in the channel holes having the second recessed regions therein.

US Pat. No. 9,105,450

PLASMA PROCESSING APPARATUS

TOHOKU UNIVERSITY, (JP) ...

1. A plasma processing apparatus for plasma-processing an object to be processed by exciting a gas by using electromagnetic
waves, the plasma processing apparatus comprising:
a processing container;
an electromagnetic wave source which outputs electromagnetic waves;
a transmission line through which the electromagnetic waves output from the electromagnetic wave source are transmitted;
a plurality of dielectric plates which are arranged on an inner surface of the processing container and through which the
electromagnetic waves are emitted into the processing container;

at least three first coaxial waveguides which are adjacent to the plurality of dielectric plates and through which the electromagnetic
waves are transmitted to the plurality of dielectric plates;

wherein a first dielectric member is buried in at least one of the at least three first coaxial waveguides, and
a coaxial waveguide distributor which distributes and transmits the electromagnetic waves transmitted through the transmission
line to the at least three first coaxial waveguides,

wherein the coaxial waveguide distributor comprises: a main coaxial waveguide, at least one third coaxial waveguides connected
to a first connection portion of the main coaxial waveguide, and at least one fourth coaxial waveguides connected to a second
connection portion of the main coaxial waveguide, and

the at least one fourth coaxial waveguides and at least two of the at least three first coaxial waveguides are connected to
each other by one-to-many correspondence via a fifth coaxial waveguide, and the at least one third coaxial waveguides and
remaining of the at least three first coaxial waveguides are connected to each other by one-to-one correspondence;

wherein the at least three first coaxial waveguides are connected at regular pitches respectively to the plurality of dielectric
plates, and

wherein the first, the third, the fourth and the fifth coaxial waveguides are connected to the electromagnetic wave source.

US Pat. No. 9,153,658

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TOHOKU UNIVERSITY, Miyag...

1. A semiconductor device comprising:
a semiconductor layer;
a gate insulating film in contact with the semiconductor layer with an interface formed therebetween; and
a gate electrode layer in contact with the insulating film with an interface formed therebetween on a side opposite to the
semiconductor layer,

wherein asperity of the interface between the semiconductor layer and the gate insulating film and asperity of the interface
between the gate insulating film and the gate electrode layer each have a size which decreases correspondingly as a thickness
of the gate insulating film decreases in a region of a length of 1 ?m in a direction parallel to a direction in which the
gate insulating film extends;

wherein the size of the asperity of the interface between the semiconductor layer and the gate insulating film is 10% or less
of the thickness of the gate insulating film and the size of the asperity of the interface between the gate insulating film
and the gate electrode layer is 10% or less of the thickness of the gate insulating film.

US Pat. No. 9,070,457

MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGNETIC RANDOM ACCESS MEMORY

Tohoku University, Senda...

1. A magnetic tunnel junction, comprising:
a reference layer whose magnetization direction is invariable;
a recording layer whose magnetization direction is variable; and
a nonmagnetic layer electrically connected between the reference layer and the recording layer,
wherein
magnetization of the reference layer and the recording layer is perpendicular to a film plane,
the reference layer and the recording layer include a current supply terminal,
the reference layer is larger in area than the recording layer,
a thermal stability factor of the magnetic tunnel junction satisfies the relationship:
EAP/kBT=E0(1?Hs/Hkrec)2/kBT?40, and

a magnitude of a dipole coupling magnetic field generated from the reference layer at a center of the recording layer satisfies
the relationship:

Hs=Mstref(dref/2)2/2?0[{(dref/2)2+tbar2}3/2],

where EAP represents an energy barrier when magnetization of the reference layer and magnetization of the recording layer are placed
in anti-parallel to each other, kB represents a Boltzmann's constant, T represents absolute temperature, E0 represents an energy barrier without dipole coupling, Hkrec represents an anisotropy magnetic field of the recording layer, dref represents a diameter of a circle whose area is identical to the area of the reference layer, tref represents a film thickness of the reference layer, tbar represents a film thickness of the nonmagnetic layer, and ?0 represents a magnetic permeability under vacuum.

US Pat. No. 9,231,130

PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL

National University Corpo...

1. A photoelectric conversion element stacked from an incident side of light in order of a glass substrate, a transparent
electrode of transparent conductive oxide (TCO), a power generating laminate of an n-i-p structure successively stacked in
order from the incident side, a back electrode, a SiCN layer directly attached to a side of the back electrode as a passivation
film, and a heat sink on the SiCN layer,
wherein the SiCN layer is between the back electrode and the heat sink;
wherein the transparent electrode of TCO is of n+-type ZnO and is directly contacted with an n-type semiconductor of the n-i-p structure and with the glass substrate;

wherein a layer of Se or Pt is located between the p-type semiconductor of the n-i-p structure and the back electrode; and
wherein the n+-type ZnO has a conduction band lower than that of the n-type semiconductor of the n-i-p structure.

US Pat. No. 9,240,505

METHOD OF ETCHING BACKSIDE SI SUBSTRATE OF SOI SUBSTRATE TO EXPOSE SIO2 LAYER USING FLUONITRIC ACID

TOHOKU UNIVERSITY, Miyag...

1. A method of producing a backside illumination type photoelectric conversion module, the method comprising the steps of:
producing a pre-photoelectric conversion module having a photoelectric conversion portion with a plurality of photoelectric
conversion elements on the surface Si layer of an SOI substrate comprising an SiO2 layer between a Si substrate and a surface Si layer; and

etching a free surface of the Si substrate with an etching method comprising a step of exposing a free surface of the Si substrate
to a fluonitric acid HF(a) HNO3(b) H2O(c) (where a, b and c are numerical values representing concentrations, the unit thereof is wt % and a+b+c=100), so that
at least a part of the SiO2 layer is exposed and the etching is stopped on the SiO2 layer, wherein

a composition of the fluonitric acid satisfies a+b?50 and
an opening portion that exposes the SiO2 layer is an entrance surface through which light enters the photoelectric conversion portion.

US Pat. No. 9,155,209

FLEX-RIGID PRINTED WIRING BOARD AND MANUFACTURING METHOD THEREOF

DAISHO DENSHI CO., LTD., ...

1. A method of manufacturing a flex-rigid printed wiring board, the method comprising:
forming a first conductor film on at least one face of a base film;
selectively etching the first conductor film so that the first conductor film has a thinner portion that is thinner than the
other portion, the thinner portion performing as a flexible portion;

forming a coverlay film over the base film;
sequentially laminating a prepreg layer and a third conductor film over the coverlay film, the prepreg layer having an opening
that overlaps the flexible portion so that a rigid layer, which is higher in elasticity than the base film, is formed at a
rigid portion on the base film; and

after sequentially laminating the prepreg layer and the third conductor film over the coverlay film, carrying out a thermo-compression
bonding process, wherein

the flexible portion consists of the base film, the first conductor film, and the coverlay film,
a thickness-change point in the first conductor film is positioned adjacent to the rigid portion side from a boundary between
a rigid portion and the flexible portion, and

an average thickness “tf” of the first conductor film formed at the flexible portion on the base film and an average thickness
“tR” of the first conductor film formed at the rigid portion on the base film satisfy a relationship of tf

US Pat. No. 9,287,678

SEMICONDUCTOR LASER DEVICE AND APPARATUS USING NON-LINEAR OPTICAL EFFECT

TOHOKU UNIVERSITY, Senda...

1. A semiconductor laser device comprising:
a semiconductor laser unit that performs a gain-switching operation using a relaxation oscillation mechanism to generate an
optical pulse signal which includes a first pulse and a second component subsequent to the first pulse in a time domain;

a short pass filter that is an edge filter, is provided on an output side of the semiconductor laser unit, and processes an
output signal from the semiconductor laser unit to obtain an ultra-short pulse, the short pass filter having a filter characteristic
to remove a long-wavelength side component in a wavelength domain, which is broadened by chirping and corresponds to a portion
including the second component and a part of the first pulse adjacent to the second component in the time domain, and a long-wavelength
side of a skirt portion in a short-wavelength side component, so as to pass a short-wavelength side component that corresponds
to a rising portion of the first pulse in the time domain; and

an optical amplifier that is provided on either one or both of input and output sides of the filter.

US Pat. No. 9,287,028

ALLOY COMPOSITION, FE-BASED NANO-CRYSTALLINE ALLOY AND FORMING METHOD OF THE SAME

NEC TOKIN CORPORATION, M...

1. An Fe-based nanocrystalline alloy formed from an alloy composition of the formula Fe(100-X-Y-Z)BXPYCuz having an amorphous phase as a main phase, wherein 79?100-X-Y-Z?86 atomic %, 4?X?9 atomic %, 1?Y?10 atomic %, and 0.5?Z<1.2
atomic %,
wherein the alloy composition has a first crystallization start temperature (Tx1) and a second crystallization start temperature (Tx2) which have a difference (?T=Tx2?Tx1) of 70 to 200° C.,

wherein the Fe-based nanocrystalline alloy is formed by heating the alloy composition to a temperature in a range of Tx1 ?50° C. to Tx2 ?77° C.,

wherein nanocrystals of the Fe-based nanocrystalline alloy have an average diameter of 5 to 25 nm existing in the amorphous
phase, and

wherein the Fe-based nano-crystalline alloy has coercivity of 20 A/m or less and a saturation magnetic flux density of 1.6
T or more.

US Pat. No. 9,196,460

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

TOKYO ELECTRON LIMITED, ...

37. A plasma processing apparatus comprising:
a processing container which is formed of metal and receives a substrate that is plasma-processed;
an electromagnetic wave source which supplies electromagnetic waves required to excite the plasma in the processing container;
one, two, or more dielectric plates which are disposed on a lower surface of a lid of the processing container, are partially
exposed to inside of the processing container, and transmit the electromagnetic wave supplied from the electromagnetic wave
source to inside of the processing container; and

a metal electrode that is provided on a lower surface of the dielectric plate;
wherein the electromagnetic wave transmitted from the dielectric plates is propagated along a metal surface exposed to inside
of the processing container, the metal surface comprising a lower surface of the metal electrode and a lower surface of the
lid where the dielectric plate is not disposed,

wherein the plasma processing apparatus further comprises:
a first gas supply source which supplies a first gas including a plasma excitation gas;
a second gas supply source which supplies a desired second gas;
a first gas discharging unit which discharges the first gas supplied from the first gas supply source into a first space that
is an inner space of the processing container, which is adjacent to the lower surface of the lid; and

a second gas discharging unit which discharges the second gas supplied from the second gas supply source into a second space
that is an inner space of the processing container formed between the first space and a space for receiving the substrate.

US Pat. No. 9,139,650

FRAGMENT OF HUMANIZED ANTI-EGFR ANTIBODY SUBSTITUTED-LYSINE VARIABLE FRAGMENT AND USE THEREOF

TOHOKU UNIVERSITY, Senda...

1. A lysine-substituted humanized variable region fragment of a heavy-chain of an anti-human epithelial cell growth factor
(EGF) receptor 1 (Her 1) antibody 528 (5H) that consists of the amino acid sequence of SEQ ID NO:4, wherein all of the lysine
residues except for lysine (Lys) 19 in the 5H is replaced by other amino acids.

US Pat. No. 9,192,910

PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING SAME

Mitsubishi Chemical Corpo...

1. A process for producing a nitride crystal, comprising:
introducing (a) a reactant gas, which is reactive with ammonia to form a mineralizer, into a reactor charged with (b) ammonia,
to produce a mineralizer in the reactor,

wherein the ammonia is cooled while the reactant gas is introduced into the reactor; and
in the same reactor in which the mineralizer is produced, growing a nitride crystal from a starting material suitable for
growth of a nitride crystal placed in the reactor, by an ammonothermal method in the presence of ammonia and the mineralizer.

US Pat. No. 9,163,276

METHOD FOR FABRICATING STABLE-ISOTOPE-LABELED TARGET PEPTIDE FRAGMENT IN MASS SPECTROMETRY

Tohoku University, Miyag...

1. A method for producing a stable isotope-labeled target peptide fragment in mass spectrometry, comprising the following
steps (a) to (d):
(a) expressing a DNA conjugate in a system having a stable isotope-labeled amino acid to thereby prepare a stable isotope-labeled
protein, wherein the DNA conjugate comprises:

a tandemly linked DNA in which two or more DNAs encoding one or more types of target peptide fragments are linked in tandem;
a DNA encoding a peptide fragment for concentration measurement conjugated with the 5? end of the tandemly linked DNA; and
a DNA encoding a peptide fragment for concentration measurement conjugated with the 3? end of the tandemly linked DNA differing
in amino acid sequence from the peptide fragment for concentration measurement encoded by the DNA conjugated with the 5? end
of the tandemly linked DNA; and
wherein the peptide fragments for concentration measurement are different in amino acid sequence from naturally occurring
proteins and their variants, and detectable by a liquid chromatograph-tandem mass spectrometer (LC/MS/MS);
(b) subjecting the stable isotope-labeled protein to digestion by trypsin to prepare stable isotope-labeled peptide fragments
for concentration measurement and stable isotope-labeled target peptide fragments;

(c) quantifying the stable isotope-labeled peptide fragments for concentration measurement using LC/MS/MS; and
(d) calculating the concentration of the stable isotope-labeled target peptide fragments from the quantification value of
the stable isotope-labeled peptide fragments for concentration measurement.

US Pat. No. 9,165,695

COPPER ALLOY WIRE AND METHOD FOR PRODUCING THE SAME

NGK Insulators, Ltd., Na...

1. A copper alloy wire comprising:
copper matrix phases; and
composite phases comprising copper-zirconium compound phases and copper phases;
wherein the zirconium content of alloy composition is 3.0 to 7.0 atomic percent;
the copper matrix phases and the composite phases form a matrix phase-composite phase fibrous structure and are arranged alternately
parallel to an axial direction as viewed in a cross-section parallel to the axial direction and including a central axis;

the copper-zirconium compound phases and the copper phases in the composite phases form a composite phase inner fibrous structure
and are arranged alternately parallel to the axial direction at a phase pitch of 50 nm or less as viewed in the cross-section;

the copper alloy wire contains oxygen in an amount of 700 to 2,000 ppm by mass; and
wherein the composite phases contain 5% to 25% of amorphous phases in terms of area fraction as viewed in the cross-section.

US Pat. No. 9,190,337

ETCHING METHOD

TOHOKU UNIVERSITY, Miyag...

1. An etching method comprising:
measuring a temperature of an Si substrate during an etching processing, wherein the etching processing comprises supplying
an etching solution to an upper surface of the Si substrate, and an exothermic reaction occurs in the etching processing;
and

heating and/or cooling the Si substrate by heating and/or cooling fluids which are discharged toward a lower surface of the
Si substrate in accordance with temperature obtained in the measuring, wherein

the fluid for heating the Si substrate and the fluid for cooling the Si substrate are supplied from different nozzles, and
the heating and cooling fluids are controlled independently.

US Pat. No. 9,202,545

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

TOHOKU UNIVERSITY, Senda...

1. A magnetoresistance effect element, comprising:
a fixed layer including a first ferromagnetic layer of a magnetization direction invariable in a direction perpendicular to
a film surface;

a second ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface;
a first non-magnetic layer adjacent to the second ferromagnetic layer;
a non-magnetic coupling layer adjacent to a surface of the second ferromagnetic layer on a side opposite the first non-magnetic
layer;

a third ferromagnetic layer of a magnetization direction variable in the direction perpendicular to the film surface adjacent
to a surface of the non-magnetic coupling layer on a side opposite the second ferromagnetic layer; and

a second non-magnetic layer adjacent to a surface of the third ferromagnetic layer on a side opposite the non-magnetic coupling
layer,

wherein the second and third ferromagnetic layers each include at least one of Fe, Co and Ni and include at least one of B,
C, N, O, F, Si, Al, P and S in order to place each of the second and third ferromagnetic layers in an amorphous condition
immediately after thin film deposition thereof,

the second and third ferromagnetic layers have the same magnetization direction, and a total of the respective thicknesses
of the second and third ferromagnetic layers is 2 nm or more, and

the non-magnetic coupling layer has a thickness of 0.3 nm or more and less than 1.0 nm.

US Pat. No. 9,173,878

BRAIN FUNCTION IMPROVING AGENT

Tohoku University, Miyag...

1. A method for use in treatment of cognitive dysfunction selected from the group comprising Alzheimer's disease, Parkinson
disease, Pick's disease, and Huntington's disease, schizophrenia, bipolar disorder, depression, phobia, sleep disorder, drug
dependence, autism, Asperger's syndrome, mental deficiency, polyergic disorder, or tic disorder, comprising administering
to a subject in need thereof an effective amount of a compound represented by formula (I):

wherein, R1 is a hydrogen atom, C1-6 alkyl, cyano, —C(?O)NR11R12, or —C(?O)OR13;

R2 is a hydrogen atom, C1-6 alkyl, hydroxy, —X1—R14, or —NR15R16;

R3, R4, R5, and R6 are each independently selected from the group consisting of a hydrogen atom, a halogen atom, C1-6 alkyl, hydroxy, C1-6 alkoxy, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, cyano, nitro, —C(?O)NR17R18, and —C(?O)OR19;

R11 and R12 are each independently selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl; or

R11 and R12, together with a nitrogen atom to which they are attached, form a nitrogen-containing heterocycle, and the nitrogen-containing
heterocycle may be substituted with one or more substituents selected from the group consisting of C1-6 alkyl, hydroxy, hydroxyC1-6 alkyl, C1-6 alkoxy, C1-6 alkoxyC1-6 alkyl, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, amino C1-6 alkyl, (C1-6 alkylamino)C1-6 alkyl, [di(C1-6 alkyl)amino]C1-6 alkyl, —C(?O)NR22R23, —C(?O)OR24, —(C1-6 alkyl)C(?O)NR22R23, and —(C1-6 alkyl)C(?O)OR24;

R13 is selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl, wherein the alkyl group may be substituted with one or more substituents selected
from the group consisting of C6-10 aryl, hydroxy, C1-6 alkoxy, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, —C(?O)NR22R23, and —C(?O)OR24;

X1 is —O—, —S—, —SO—, or —SO2—;

R14 is selected from the group consisting of C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl;

R15 is hydrogen atom, C1-6 alkyl, C6-10 aryl, 5- to 10-membered heteroaryl, or —C(?O)—R21, wherein the alkyl group may be substituted with one or more substituents selected from the group consisting of C6-10 aryl, hydroxy, C1-6 alkoxy, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, —C(?O)NR22R23, and —C(?O)OR24;

R16 is a hydrogen atom, C1-6 alkyl, C6-10 aryl, or 5- to 10-membered heteroaryl, wherein the alkyl group may be substituted with one or more substituents selected from
the group consisting of C6-10 aryl, hydroxy, C1-6 alkoxy, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, —C(?O)NR22R23, and —C(?O)OR24; or

R15 and R16, together with a nitrogen atom to which they are attached, form a nitrogen-containing heterocycle, and the nitrogen-containing
heterocycle may be substituted with one or more substituents selected from the group consisting of C1-6 alkyl, hydroxy, hydroxyl C1-6 alkyl, C1-6 alkoxy, C1-6 alkoxyC1-6 alkyl, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, aminoC1-6 alkyl, (C1-6 alkylamino)C1-6 alkyl, [di(C1-6 alkyl)amino]C1-6 alkyl, —C(?O)NR22R23, —C(?O)OR24, —(C1-6 alkyl)C(?O)NR22R23, and —(C1-6 alkyl)C(?O)OR24;

R17 and R18 are each independently selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl; or R17 and R18, together with a nitrogen atom to which they are attached, form a nitrogen-containing heterocycle;

R19 is selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl;

R21 is selected from the group consisting of a hydrogen atom, C1-6 alkyl, C1-6 alkoxy, C6-10 aryl, and 5- to 10-membered heteroaryl, wherein the alkyl group and the alkoxy group may be substituted with one or more substituents
selected from the group consisting of C6-10 aryl, hydroxy, C1-6 alkoxy, C1-6 alkylthio, C1-6 alkylsulfinyl, C1-6 alkylsulfonyl, amino, C1-6 alkylamino, di(C1-6 alkyl)amino, —C(?O)NR22R23, and —C(?O)OR24;

R22 and R23 are each independently selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl, or R22 and R23, together with a nitrogen atom to which they are attached, form a nitrogen-containing heterocycle group;

R24 is each independently selected from the group consisting of a hydrogen atom, C1-6 alkyl, C6-10 aryl, and 5- to 10-membered heteroaryl, or a pharmaceutically acceptable salt thereof.

US Pat. No. 9,493,683

METHOD OF PRODUCING A CHLOROPRENE-BASED POLYMER, POLYCHLOROPRENE LATEX AND ADHESIVE COMPOSITION

Denka Company Limited, T...

1. A method of producing a chloroprene-based polymer, comprising:
adding a surfactant to an aqueous medium at a concentration of from 0.00001 wt. parts or more based on 100 wt. parts of the
aqueous medium to an amount that is less than a critical micelle concentration (CMC) of the surfactant, to produce a first
mixture;

nitrogen bubbling the first mixture to produce a second mixture;
adding chloroprene or a mixture of chloroprene and a monomer copolymerizable with chloroprene of 2,3-dichloro-1,3-butadiene
to the second mixture; and

polymerizing the chloroprene or the mixture of chloroprene and a monomer copolymerizable with chloroprene of 2, 3-dichloro-1,3-butadiene,
without introducing a hydrophilic group in the polymer, in the presence of the surfactant in the aqueous medium.

US Pat. No. 9,214,489

PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE

National University Corpo...

1. A photodiode, comprising:
a first-conduction-type region in a semiconductor layer made of silicon;
an insulator layer being in contact with the semiconductor layer; and
a second-conduction-type region located between the first-conduction-type layer and an interface between the semiconductor
layer and the insulator layer, the second-conduction-type region having a polarity opposite to the first-conduction-type region,

wherein a thickness of a non-depleted region of the second-conduction-type region is larger than roughness of the interface
between the semiconductor layer and the insulator layer in a region having a length of 1 ?m in a direction parallel to the
interface, and is smaller than a penetration depth of ultraviolet light at which an intensity of the ultraviolet light in
a wavelength range of 200-320 nm entering the semiconductor layer is equal to 1/e times the intensity of the same ultraviolet
light at an outermost surface of the silicon.

US Pat. No. 9,429,471

PHOTODIODE ARRAY FOR SPECTROMETRIC MEASUREMENTS AND SPECTROMETRIC MEASUREMENT SYSTEM

SHIMADZU CORPORATION, Ky...

1. A photodiode array for spectrometric measurements having a plurality of photodiodes arrayed in a one-dimensional form,
the photodiode array being arranged so that an array direction of the photodiodes is made to coincide with a wavelength-dispersing
direction of a light-dispersing element so as to concurrently detect wavelength components of light dispersed by the light-dispersing
element, wherein:
the photodiodes are divided into groups in such a manner that each group includes one or more photodiodes neighboring each
other in the array direction, with at least one group including two or more photodiodes; and

the groups are covered with an antireflection coating having a common transmittance characteristic for each group, and being
composed of a material different from a neighboring group or having a thickness different from a neighboring group.

US Pat. No. 9,264,637

SOLID-STATE IMAGE PICKUP APPARATUS

Tohoku University, Miyag...

1. A solid-state image pickup apparatus comprising:
a plurality of two-dimensionally arrayed unit pixels, each of the unit pixels including an optical-electrical conversion element
performing optical-electrical conversion of an incident light;

a charge conversion element and two output terminals provided for each of a plurality of pixel groups, each pixel group including
one or more of the unit pixels, the charge conversion element converting a signal charge optical-electrical converted by the
optical-electrical conversion element of each of the unit pixels in the pixel group into a voltage or current, and the two
output terminals being capable of outputting a noise signal that occurs at the time of resetting the charge conversion element
and a signal-noise sum signal obtained by adding a signal that has occurred by optical-electrical conversion to the noise
signal separately;

a plurality of first transfer lines to which ones of the output terminal pairs of a plurality of the pixel groups are connected
in common, the plurality of first transfer lines being capable of holding voltages based on the noise signals outputted from
the output terminals;

a plurality of second transfer lines to which the others of the output terminal pairs of the plurality of the pixel groups
are connected in common, the plurality of second transfer lines being capable of holding voltages based on the signal-noise
sum signals outputted from the output terminals;

first switches arranged between the ones of the output terminal pairs and the first transfer lines;
second switches arranged between the others of the output terminal pairs and the second transfer lines;
a third switch provided for each of the first transfer lines;
a fourth switch provided for each of the second transfer lines;
a third transfer line to which the plurality of first transfer lines are connected in parallel via the third switches, respectively;
and

a fourth transfer line to which the plurality of second transfer lines are connected in parallel via the fourth switches,
respectively.

US Pat. No. 9,205,178

TI-NI-NB ALLOY DEVICE

NEC TOKIN CORPORATION, M...

1. A Ti—Ni—Nb alloy device which comprises one of a Ti—Ni—Nb alloy and a Ti—Ni—Nb—X alloy, wherein X is at least one metal
selected from the group consisting of Fe, Cr, V, and Co,
wherein transformation of said device is finished at a temperature difference smaller than 10° C. after a start of reverse
transformation,

wherein said Ti—Ni—Nb alloy comprises 46.5 to 50.5 at % Ti, 6 to 15 at % Nb, and a balance of 50 at % or less of Ni,
wherein at least one of a shape memory treatment condition and a strain applied to the alloy device are changed with respect
to portions of the device in a lengthwise direction thereof such that the Ti—Ni—Nb alloy device has a seamless structure with
different reverse transformation temperatures in the respective portions thereof,

wherein said shape memory treatment condition includes a shape memory treatment temperature and a shape treatment time, and
wherein said alloy device has a strain ranging between 8% and 15% in terms of an elongation strain after a heat treatment
so as to have a temperature difference, ?T, smaller than said alloy having no strain in a temperature range between 4 to 10°
C., said temperature difference being from a reverse transformation start temperature, As point, to a reverse transformation
finish temperature, Af point.

US Pat. No. 9,111,051

ASYNCHRONOUS PROTOCOL CONVERTER

TOHOKU UNIVERSITY, Senda...

1. An asynchronous protocol converter provided between neighboring routers in an LSI (Large Scale Integrated circuit) including
a plurality of IP cores and a router provided adjacent to the plurality of IP cores, comprising:
a two-to-four-phase converter connected to the neighboring router in the LSI;
a four-phase pipelined router connected to the output side of the two-to-four-phase converter;
a four-to-two-phase converter connected to an output of the four-phase pipelined router;
an input controller for controlling the two-to-four-phase converter; and
an output controller for controlling the four-to-two-phase converter,
wherein in the input controller, an input phase signal (in_phase) is input from the two-to-four-phase converter; an input
enable signal (in_enable) is output to the two-to-four-phase converter; an input completion signal (in_completion) is input
from the four-phase pipelined router,

wherein in the output controller, an output completion signal (out_completion) is input from the four-phase pipelined router;
an output enable signal (out_enable) is output to the four-phase pipelined router; an output phase signal (out_phase) is input
from the four-to-two-phase converter; a pre-output phase signal (pre—out_phase) is output to the four-to-two-phase converter, and

wherein protocol conversions from the two-to-four-phase and the four-to-two-phase are independently performed by the input
controller and the output controller.

US Pat. No. 9,157,681

SURFACE TREATMENT METHOD FOR ATOMICALLY FLATTENING A SILICON WAFER AND HEAT TREATMENT APPARATUS

National University Corpo...

1. A heat treatment apparatus comprising an outer tube defining therein a heat treatment space and having a double wall structure,
a heater provided on the outside of the outer tube, an inner tube provided in the heat treatment space for introducing and
discharging an inert gas, and a wafer setting stage disposed in the inner tube, wherein
the outer tube has an inner wall and an outer wall to define a hollow portion between the inner and the outer walls and to
discharge a metal separated from the heater, and

the inner tube has portions that introduce and discharge the inert gas respectively, and that have introducing and discharging
flanges for the inert gas and pipes that introduce an inert gas to the inside of the introducing and discharging flanges,
respectively.

US Pat. No. 9,315,584

LH-TYPE BISPECIFIC ANTIBODY

TOHOKU UNIVERSITY, Sanda...

1. A single-chain polypeptide which is either a first or a second polypeptide of a diabody-type bispecific antibody, said
diabody-type bispecific antibody consisting of said first polypeptide comprising a humanized variable region of the light
chain (5L) of an anti-human EGF receptor 1 antibody 528 and a humanized variable region of the heavy chain (OH) of an anti-CD3
antibody OKT in this order from its N-end to C-end and said second polypeptide comprising a humanized variable region of the
light chain (OL) of an anti-CD3 antibody OKT and a humanized variable region of the heavy chain (5H) of an anti-human EGF
receptor 1 antibody 528 in this order from its N-end to C-end.
US Pat. No. 9,446,033

PHARMACEUTICAL COMPOSITION INCLUDING MIGRATORY FACTOR FOR GUIDING PLURIPOTENT STEM CELLS TO INJURY

CLIO, INC., Akita (JP) T...

1. A pharmaceutical composition for activating migration of pluripotent stem cells, comprising: a compound that activates
sphingosine-1-phosphate receptor 2 as an active ingredient thereof, wherein the compound is selected from the group consisting
of 1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl)-5-(trifluoromethyl) pyridin-2(1H)-one, 1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl)-3-methylimidazolindine-2,4,5-trione,
1-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-24(1-methyl-1H-tetrazol-5-yl)thio)ethanone, and (S)-1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl-2?,3?-dihydrospiro[imidazolidine-4,1?-indene]-2,5-dione.

US Pat. No. 9,383,758

FLOW RATE RANGE VARIABLE TYPE FLOW RATE CONTROL APPARATUS

Fujikin Incorporated, Os...

1. A flow rate range variable type flow rate control apparatus comprising:
(a) a thermal type mass flow rate control apparatus comprising
i. a flow rate control valve connected to a first fluid passage;
ii. a laminar flow element device part disposed on the first fluid passage; and
iii. a flow rate sensor part, wherein temperature changes in proportion to a mass flow rate of fluid are detected at the flow
rate sensor part, and fluid with a predetermined set flow rate is made to flow out by opening or closing the flow rate control
valve based on detected temperature of fluid flowing in the first fluid passage; and

(b) a second fluid passage bypassing the flow rate sensor part and leading to the flow rate control valve that comprises at
least two third fluid passages arranged in parallel, wherein each third fluid passage is provided with a laminar flow element
and a switching valve, wherein each laminar flow element has a different coarseness from the other, and fluid flowing in a
small flow quantity range is made to flow to one laminar flow element that controls flow rate of fluid flowing in the small
flow quantity range while fluid flowing in the large flow quantity range is made to flow to the other laminar flow element
that controls flow rate control of fluid flowing in the large flow quantity range.

US Pat. No. 9,153,306

TUNNEL MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME

TOHOKU UNIVERSITY, Senda...

1. A tunnel magnetoresistive effect element comprising:
a recording layer with a perpendicular magnetic anisotropy;
a pinned layer with a perpendicular magnetic anisotropy and with a magnetization direction fixed in one direction; and
an oxide tunnel barrier layer disposed between the recording layer and the pinned layer,
the tunnel magnetoresistive effect element characterized in that:
one of the recording layer and the pinned layer comprises a ferromagnetic material including at least one type of a 3d transition
metal, with a magnetization direction oriented in a perpendicular direction with respect to a film plane by anisotropy at
an interface with the tunnel barrier layer; and

at least one of the recording layer and the pinned layer is provided with an electrically conductive oxide layer disposed
on an interface on a side opposite to the tunnel barrier layer, the electrically conductive oxide layer being adapted to increase
the perpendicular magnetic anisotropy.

US Pat. No. 9,137,469

SOLID-STATE IMAGING DEVICE

TOHOKU UNIVERSITY, Tokyo...

1. A solid-state imaging device comprising:
a plurality of pixels arranged in both row and column directions, each of the pixels comprising:
a photoelectric conversion element for photoelectrically converting incident light so as to accumulate signal charges; a charge-voltage
conversion terminal for voltage-converting signal charges accumulated in the photoelectric conversion element into voltage
signals; a voltage signal output means for amplifying signals voltage-converted by the charge-voltage conversion terminal;
a transfer means for transferring signal charges accumulated in the photoelectric conversion element to the charge-voltage
conversion terminal; and a first reset means for switching between conduction and disconnection to a power source having a
first reset voltage for the charge-voltage conversion terminal by on-off control;

a plurality of first signal lines capable of being kept in a floating potential state, each of the first signal lines being
connected in common to each of the pixels in each column;

a first scanning means for selecting the pixels that output respective signals to the respective first signal lines via the
voltage signal output means corresponding to each of the pixels; and

constant current circuit elements for turning on and off the supply of constant current to the respective first signal lines,
wherein the solid-state imaging device executes a noise signal read-out operation in which each of the charge-voltage conversion
terminals in the respective pixels in one row selected by the first scanning means is reset to the first reset voltage by
turning on the first reset means and then rendered to be in a floating potential state by turning off the first reset means;
with constant current being supplied to the first signal lines by turning on the constant current circuit elements, each voltage
at each of the charge-voltage conversion terminals is read out to each of the first signal lines via each voltage signal output
means for a predetermined period of time so that each voltage is stored in each of the first signal lines; and noise signals
in the respective pixels in the one row are output by turning off the constant current circuit elements and reading out each
voltage stored in each of the first signal lines, and

wherein the solid-state imaging device executes an optical signal read-out operation in which signal charges accumulated in
each of the photoelectric conversion elements in the respective pixels in one row selected by the first scanning means are
transferred to each of the charge-voltage conversion terminals by the transfer means; with constant current being supplied
to the first signal lines by turning on the constant current circuit elements, each signal voltage-converted by each of the
charge-voltage conversion terminals is read out to each of the first signal lines via each voltage signal output means for
the predetermined period of time so that each voltage signal is stored in each of the first signal lines; and optical signals
in the respective pixels in the one row are output by turning off the constant current circuit elements and reading out each
voltage signal stored in each of the first signal lines.

US Pat. No. 9,296,613

DISPERSION OF CARBON MATERIAL AND PROCESS FOR PRODUCING SAME

NATIONAL UNIVERSITY CORPO...

1. A carbon material dispersion, comprising:
a fluorinated carbon material having a fluorinated surface formed by bringing a treatment gas with a fluorine concentration
of 0.01 to 20 vol % into contact with a carbon material under conditions of a treatment time of 4 to 24 hours and a treatment
temperature of 150 to 350° C.; and

a dispersion medium in which the fluorinated carbon material is dispersed,
wherein a surface of the fluorinated carbon material is free from fluorine gas and the fluorinated carbon material is added
in an amount of 0.001 to 25 vol % based on the total weight of the dispersion to the dispersion medium.

US Pat. No. 9,614,124

SUBSTRATE HAVING ANNEALED ALUMINUM NITRIDE LAYER FORMED THEREON AND METHOD FOR MANUFACTURING THE SAME

TOHOKU UNIVERSITY, Senda...

1. A multi-layered substrate comprising:
a base substrate made of a material selected from the group consisting of sapphire, silicon carbide (SiC), and aluminum nitride
(AlN); and

an annealed aluminum nitride layer formed on the base substrate and having a thickness of at least 100 nm,
wherein the annealed aluminum nitride layer is formed by forming an aluminum nitride layer on the base substrate at a forming
temperature; and annealing the aluminum nitride layer at an annealing temperature that is above the forming temperature and
in a mixed gas atmosphere comprising nitrogen gas (N2) and carbon monoxide gas (CO), and

wherein the mixed gas atmosphere has a mixture ratio of N2 gas/CO gas that ranges from 0.95/0.05 to 0.4/0.6.

US Pat. No. 9,095,890

METALLIC GLASS FASTENING SCREW

Maruemu Works Co., Ltd., ...

1. A metallic glass fastening screw comprising:
a thread;
a groove; and
a plastic strain region disposed near a surface of the screw and being formed through molding amorphous bulk metallic glass
by form rolling at a glass transition temperature or less of the bulk metallic glass, wherein

the screw satisfies a relationship of d>0.022×D where a depth from a bottom of the groove to the plastic strain region is
d, and an outside diameter of the screw is D.

US Pat. No. 9,420,210

SOLID-STATE IMAGE SENSOR FOR CAPTURING HIGH-SPEED PHENOMENA AND DRIVE METHOD FOR THE SAME

TOHOKU UNIVERSITY, Miyag...

1. A solid-state image sensor, comprising:
a pixel area in which a plurality of pixels each including a photoelectric conversion section for receiving light and producing
photocharges are arranged in a two-dimensional array; and

a memory area, which is an area separated from the pixel area and in which a burst reading memory section and continuous reading
memory section are arranged for each pixel,

the burst reading memory section having memory sections such that each pixel is connected to its own plurality of memory sections
in the burst reading memory section, the plurality of the memory sections being provided to hold output signals of one pixel
in the pixel area for a plurality of frames without being read to an outside of the memory area, and

separately from the burst reading memory section, the continuous reading memory section having memory sections such that each
pixel is connected to its own one memory section in the continuous reading memory section, and

in which an output signal line for reading signals held in the burst reading memory section and an output signal line for
reading a signal held in the continuous reading memory section are independently provided.

US Pat. No. 9,385,042

SEMICONDUCTOR DEVICE

NATIONAL UNIVERSITY CORPO...

1. A semiconductor device comprising a complementary metal-oxide semiconductor (CMOS) circuit formed on a (551) plane of silicon,
wherein
the CMOS circuit includes an n-type transistor and a p-type transistor,
each of the n-type transistor and the p-type transistor includes a diffusion region and a silicide layer, said silicide layer
of each of the n-type transistor and the p-type transistor (i) being in contact with the diffusion region and (ii) consisting
of silicon and a metal material,

a thickness of the silicide layer, which is in contact with the diffusion region of the n-type transistor, is not less than
2 nm and is not more than 8.5 nm, and

a thickness of the silicide layer, which is in contact with the diffusion region of the p-type transistor, is thicker than
the thickness of the silicide layer of the n-type transistor.

US Pat. No. 9,135,973

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

TOHOKU UNIVERSITY, Miyag...

1. A magnetoresistance effect element comprising:
a pinned layer of a ferromagnet with a fixed magnetization direction;
a magnetic recording layer of a ferromagnet with a thin wire shape including a region with a variable magnetization direction;
and

a non-magnetic layer with a thin wire shape formed between the pinned layer and the magnetic recording layer,
wherein:
the magnetic recording layer includes three regions consisting of pinned magnetization regions at the ends and a magnetization
switching region sandwiched therebetween;

the pinned layer and the pinned magnetization regions include current supply terminals; and
at least one of the pinned layer and the magnetic recording layer is formed from a ferromagnet enabling a magnetization direction
to be changed from parallel to perpendicular to a film plane by controlling a film thickness to be not more than 3 nm, with
a controlled magnetoresistance ratio and with the magnetization direction perpendicularly oriented with respect to the film
plane by a film thickness control.

US Pat. No. 9,260,773

NANOCRYSTAL TITANIUM ALLOY AND PRODUCTION METHOD FOR SAME

NHK SPRING CO., LTD., Yo...

1. A titanium alloy having a composition that is classified as a titanium alloy of a near ? titanium or an ?+? titanium consisting
of 4 to 9 mass % of Al, 2 to 10 mass % of V, and the balance of Ti and inevitable impurities, the titanium alloy consisting
of a uniform fine structure in which equiaxed crystals with an average grain size of less than 1000 nm are uniformly dispersed,
wherein the equiaxed crystals have a ? phase at more than 0% and not more than 1.0% by area ratio, which is measured by an
Electron BackScattered Diffraction (EBSD) method using a phase map.

US Pat. No. 9,210,805

COPPER ALLOY FOIL, FLEXIBLE PRINTED CIRCUIT BOARD USING THE SAME, AND METHOD FOR PRODUCING COPPER ALLOY FOIL

NGK Insulators, Ltd., Na...

1. A copper alloy foil comprising:
copper matrix phases; and
composite phases comprising copper-zirconium compound phases and copper phases;
wherein the zirconium content of the alloy composition is 3.0 to 7.0 atomic percent;
wherein the copper matrix phases and the composite phases form a matrix phase-composite phase layered structure and are arranged
alternately parallel to a rolling direction throughout the entire foil as viewed in a cross-section perpendicular to a width
direction;

wherein the copper-zirconium compound phases and the copper phases in the composite phases form a composite phase inner layered
structure, and the copper matrix phases and the composite phases arranged parallel to the rolling direction are laminated
alternately in the thickness direction and the copper-zirconium compound phases and the copper phases are laminated alternately
in the thickness direction at a phase thickness of 50 nm or less as viewed in the cross-section;

wherein the composite phases contain 5% to 25% of amorphous phases in terms of area fraction as viewed in the cross-section;
and

wherein the copper alloy foil contains oxygen in an amount of 700 to 2,000 ppm by mass.

US Pat. No. 9,078,584

ELECTROENCEPHALOGRAM ELECTRODE UNIT FOR SMALL ANIMALS AND MEASUREMENT SYSTEM USING THE SAME

TOHOKU UNIVERSITY, Senda...

1. An electroencephalogram electrode unit for small animals, comprising:
a base that covers a scalp or brain surface of a small animal and has a plurality of through holes; and
a plurality of electrodes,
wherein each of the plurality of electrodes is inserted into one of the plurality of through holes;
wherein each of the plurality of electrodes is equipped with an insulating inner first tube, an insulating outer second tube
housing the first tube, an electrode section disposed within the first tube, an extraction conducting wire that is connected
to the electrode section and for taking electroencephalogram signals to outside, and a paste filled within the first tube;

wherein the first tube and the second tube are installed in the through hole in a manner of standing upright from the scalp
or brain surface; and

wherein the electrode section is formed in a form of a wire and is disposed, in a manner of standing upright from the scalp
or brain surface, within the paste filled within the first tube.

US Pat. No. 9,184,171

SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF PRODUCING THE SAME

TOHOKU UNIVERSITY, Senda...

1. A semiconductor integrated circuit in which a plurality of memory cells are serially-connected in an axial direction, comprising:
a semiconductor pillar provided in the axial direction that serves as a channel;
a floating gate that circumferentially covers the side face of the semiconductor pillar or covers a part of the semiconductor
pillar to have an interval from the outer circumference of the semiconductor pillar;

a main control gate that circumferentially covers the side face of the floating gate or covers a part of the floating gate
to have an interval from the outer circumference of the floating gate;

a source/drain control gate that circumferentially covers the side face of the semiconductor pillar or covers a part of the
semiconductor pillar to have an interval from the outer circumference of the semiconductor pillar at the upper face or the
lower face of the floating gate;

a first insulating layer provided between the semiconductor pillar and the floating gate;
a second insulating layer provided between the floating gate and the main control gate;
a third insulating layer provided between the semiconductor pillar and the source/drain control gate; and
a fourth insulating layer provided between the floating gate and the source/drain control gate and between the main control
gate and the source/drain control gate,

wherein the floating gate and the source/drain control gate are provided to correspond to the each memory cell along the semiconductor
pillar, and

a side section of the semiconductor pillar opposed to the source/drain control gate has an inversion layer when a voltage
is applied to the source/drain control gate to reduce the interference due to the parasitic capacitance caused between neighboring
memory cells.

US Pat. No. 9,132,420

METHOD FOR MANUFACTURING METALLIC GLASS NANOWIRE, METALLIC GLASS NANOWIRE MANUFACTURED THEREBY, AND CATALYST CONTAINING METALLIC GLASS NANOWIRE

TOHOKU UNIVERSITY, (JP)

1. A method for manufacturing metallic glass nanowire, characterized in that melted metallic glass or a master alloy thereof
is subjected to gas atomization in a supercooled state.

US Pat. No. 9,114,390

9-AZANORADAMANTANE N—OXYL COMPOUND AND METHOD FOR PRODUCING SAME, AND ORGANIC OXIDATION CATALYST AND METHOD FOR OXIDIZING ALCOHOLS USING 9-AZANORADAMANTANE N—OXYL COMPOUND

TOHOKU UNIVERSITY, (JP)

1. A 9-azanoradamantane N-oxyl compound represented by the following formula (1):
wherein R1 and R2 represent hydrogen atoms or alkyl groups, and when one of R1 and R2 is hydrogen, the other is an alkyl group.

US Pat. No. 9,412,567

PLASMA MONITORING METHOD AND PLASMA MONITORING SYSTEM

LAPIS SEMICONDUCTOR CO., ...

7. A plasma monitoring system comprising:
sensors each having
a substrate;
a first electrode;
an insulating film that is formed on the first electrode and has a contact hole formed therein, the contact hole exposing
a part of a surface of the first electrode; and

a second electrode that is formed on the insulating film and is electrically separated from the first electrode, and facing
a plasma during a plasma process;

voltmeters monitoring the plasma during first and second plasma processing of the plasma process, by measuring, for each respective
sensor of the sensors, potentials of the respective first electrode and the respective second electrode, or a potential difference
between the respective first electrode and the respective second electrode to determine charge-up;

a first wafer, wherein in the first plasma processing, a plurality of the sensors is arranged and bonded on the first wafer;
and

a second wafer, wherein in the second plasma processing, a group of the sensors is arranged and bonded at a plurality of different
positions on the second wafer, a total number of the group of the sensors arranged and bonded on the second wafer is different
from a total number of the plurality of the sensors arranged and bonded on the first wafer.

US Pat. No. 9,379,666

MICROWAVE BAND BOOSTER RECTIFIER CIRCUIT, AND WIRELESS TAG DEVICE AND WIRELESS TAG SYSTEM EMPLOYING SAME

TOHOKU UNIVERSITY, Miyag...

1. A microwave frequency band stub resonance booster circuit, comprising:
an RF signal input terminal;
an RF boosted signal output terminal;
a micro-capacitor element of 0.01 pF to 0.2 pF; and
a ?g/2 open stub element, wherein
the micro-capacitor element and the ?g/2 stub element resonate in series to carry out impedance conversion of an input RF
signal to suppress electromagnetic wave radiation,

an amplitude of the input RF signal boosted,
wherein
a boost ratio is between 19 times to 33 times,
an anode or cathode terminal of a rectifier diode element and a terminal of a rectifier diode element opposite to that of
the rectifier diode element in polarity connect to a connection point between said micro-capacitor element and open stub element,

an unconnected terminal of the rectifier diode element connects to an RF signal ground level part,
an unconnected terminal of the rectifier diode element connects to a capacitance element for rectified output to charge the
rectifier diode element to obtain boosted rectified output of the RF input signal,

insertion of a capacitor required to voltage-doubling rectifier circuit becomes unnecessary because the open stub is in a
DC and open state in order to eliminate energy loss due to the inserted capacitor, by which high Q value not obtain, in the
microwave band, and

insertion of a capacitor necessary for bias application not needed because DC conductance of a connection point, which is
an output terminal of the RF boost signal and lies between the micro-capacitor element and the ?g/2 open stub element.

US Pat. No. 9,392,991

EVALUATION AID AND EVALUATION DEVICE

NATIONAL UNIVERSITY CORPO...

1. An evaluation aid adapted to be used for taking a digital X-ray dynamic image thereof, wherein evaluation is carried out
through the digital X-ray dynamic image, the evaluation aid comprising:
a lower plate-like body including a plurality of regions having different X-ray absorption ratios;
at least one upper movable body having a plurality of wire rods, wherein the at least one upper movable body is capable of
moving with respect to the lower plate-like body in order that the plurality of wire rods traverse X-ray with which the lower
plate-like body is being irradiated; and

a driving portion which moves the at least one upper movable body with respect to the lower plate-like body,
wherein the at least one upper movable body being replaceable with another upper movable body having a different structure
from each other, and

wherein at least one of the plurality of wire rods is further linearly segmented into linear wire rod segments having a spacing
between each linear wire rod segment.

US Pat. No. 9,279,186

METAL MEMBER MANUFACTURING METHOD AND METAL MEMBER

TOHOKU UNIVERSITY, Senda...

1. A metal member manufacturing method for obtaining a metal member having fine openings, the method comprising:
placing a metallic material containing a second constituent and a third constituent in a molten metal bath of a first constituent,
wherein the second constituent and the third constituent respectively have positive and negative heats of mixing relative
to the first constituent, and the metallic material includes a compound, an alloy, or a nonequilibrium alloy each having a
melting point that is higher than the solidifying point of the molten metal bath; and

selectively dissolving the third constituent into the molten metal bath by controlling the temperature of the molten metal
bath to a temperature lower than a minimum liquidus temperature within a range of liquidus temperatures of each compositional
variation of the metallic material in which an amount of the third constituent in the metallic material varies from an amount
of the third constituent present in the metallic material before the metallic material is placed in the molten metal bath
to where an amount of the third constituent present in the metallic material is none.

US Pat. No. 9,543,191

WIRING STRUCTURE HAVING INTERLAYER INSULATING FILM AND WIRING LINE WITHOUT A BARRIER LAYER BETWEEN

ZEON CORPORATION, Tokyo ...

1. A semiconductor device comprising:
an insulating film formed with a fluorinated carbon film and having a groove; and
a wiring member formed of copper which is buried in the groove of the insulating film to form a wiring line of a damascene
structure,

wherein at least a portion of a front surface of the insulating film that contacts the wiring member includes a carbon-rich
layer in which a carbon content is higher than a fluorine content.

US Pat. No. 9,378,876

FERROMAGNETIC PARTICLES AND PROCESS FOR PRODUCING THE SAME, AND ANISOTROPIC MAGNET, BONDED MAGNET AND COMPACTED MAGNET

TODA KOGYO CORPORATION, ...

1. A process for producing ferromagnetic particles comprising an Fe16N2 compound phase in an amount of not less than 80% as measured by Mössbauer spectrum, and each having an outer shell in which
FeO is present in the form of a film having a thickness of not more than 5 nm, the process comprising the steps of:
subjecting iron oxide or iron oxyhydroxide having an average major axis diameter of 40 to 5000 nm and an aspect ratio (major
axis diameter/minor axis diameter) of 1 to 200 as a starting material to dispersing treatment to prepare aggregated particles
having D50 of not more than 40 ?m and D90 of not more than 150 ?m;

allowing the obtained aggregated particles to pass through a mesh having a size of not more than 250 ?m;
subjecting the iron compound particles passed through the mesh to hydrogen reducing treatment at a temperature of 160 to 420°
C.; and

then subjecting the resulting particles to nitridation treatment at a temperature of 130 to 170° C.

US Pat. No. 9,299,844

ACCUMULATION-MODE MOSFET AND DRIVING METHOD THEREOF

TOHOKU UNIVERSITY, Miyag...

1. An accumulation-mode MOSFET comprising:
a semiconductor region where a channel region is formed;
a gate electrode and a gate insulating film for forming the channel region;
a source region portion for injecting carriers; and
a drain region for ejecting carriers, wherein
a tunnel electron emission portion which emits an electronic tunnel current flowing the channel region through tunneling and
a thermionic emission portion which emits an accumulation region current flowing the channel region through thermionic emission
are provided in the source region portion.

US Pat. No. 9,624,565

NANOCRYSTAL-CONTAINING TITANIUM ALLOY AND PRODUCTION METHOD THEREFOR

NHK SPRING CO., LTD., Ka...

1. A titanium alloy having a structure classified as near ?, and comprising 4 to 9 mass % of Al, 2 to 10 mass % of V and the
remainder of Ti and inevitable impurities, the alloy further comprising:
structure in which equiaxial crystals having average crystal particle diameter less than 1000 nm are uniformly dispersed,
hardness less than 400 HV,
an area ratio of a ? phase is more than 0% and not more than 1.0%, by measurement of a phase map by an electron backscatter
diffraction (EBSD) method, and

tensile strength not less than 1200 MPa,
wherein the titanium alloy is formed by performing hot working of a processing starting material in which an ?? martensite
phase is generated by rapid cooling from a temperature not less than a ? transits temperature.

US Pat. No. 9,523,668

FUEL PROPERTY DETERMINATION METHOD AND FUEL PROPERTY DETERMINATION DEVICE

TOHOKU UNIVERSITY, (JP) ...

1. A fuel property determination method of determining a property of an unknown fuel comprising the steps of:
combustion of a mixture of premixed gas and an unknown fuel in a microflow reactor under experimental conditions specified
by a flow amount, temperature, and pressure of premixed gas, and the initial concentrations of the unknown fuel and the oxidant;

calculating changes in the concentration of intermediate products and changes in the temperatures of a premixed gas for the
unknown fuel and for a reference fuel to obtain an experimental one-dimensional space temperature distribution and a simulated
one-dimensional space temperature distribution, respectively, based on an elementary reaction mechanism and the experimental
conditions for the unknown fuel and based on an elementary reaction mechanism and experimental conditions for the reference
fuel, respectively, the experimental conditions for the reference fuel being specified by a flow amount, temperature, and
pressure of premixed gas, and the initial concentrations of the reference fuel and the oxidant;

comparing the experimental one-dimensional space temperature distribution to the simulated one-dimensional space temperature
distribution and determining that the experimental one-dimensional space temperature distribution can be derived from the
simulated one-dimensional space temperature distribution when the simulated one-dimensional space temperature distribution
is within a permitted range of the experimental one-dimensional space temperature distribution; and

obtaining the elementary reaction mechanism for the unknown fuel as a fuel elementary reaction mechanism when it is determined
that the experimental one-dimensional space temperature distribution can be derived from the simulated one-dimensional space
temperature distribution, calculating combustion characteristics of the unknown fuel by performing a simulation based on the
fuel elementary reaction mechanism, and determining a property of the unknown fuel based on the combustion characteristics
of the unknown fuel.

US Pat. No. 9,551,062

HARD FILM FOR MACHINING TOOLS AND HARD FILM-COATED METAL MACHINING TOOL

OSG CORPORATION, Toyokaw...

1. A tool hard film that is to be disposed as coating on a surface of a tool,
the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure
as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.

US Pat. No. 9,481,710

EVALUATION PEPTIDE FOR USE IN QUANTIFICATION OF PROTEIN USING MASS SPECTROMETER, ARTIFICIAL STANDARD PROTEIN, AND METHOD FOR QUANTIFYING PROTEIN

Tohoku University, Miyag...


US Pat. No. 9,469,598

ERYTHROPOIETIN PRODUCTION-PROMOTING AGENT

SBI Pharmaceuticals Co., ...

1. A method for promoting production of erythropoietin, comprising: administering to a subject with reduced erythropoietin
production a therapeutically effective amount of a compound shown by the following Formula (I):
R1—NHCH2COCH2CH2COOR2  (I)

wherein R1 represents a hydrogen atom, and R2 represents a hydrogen atom, or a salt thereof.

US Pat. No. 9,623,330

STORAGE MEDIUM HAVING STORED THEREON INFORMATION PROCESSING PROGRAM, AND INFORMATION PROCESSING DEVICE

Nintendo Co., Ltd., Kyot...

1. A non-transitory computer readable storage medium having stored thereon an information processing program executable by
a computer of an information processing system which presents information, on a display device, corresponding to a biological
signal acquired from a user, the information processing system having communication circuitry configured to receive the biological
signal transmitted from a biological sensor, and configured to receive data related to aspects of motion and/or orientation
transmitted from an input device, the information processing program causing the computer to perform operations comprising:
acquiring, via the communication circuitry, the biological signal transmitted from the biological sensor;
acquiring, via the communication circuitry, as information about aspects of motion and/or orientation of the user, the information
about aspects of motion and/or orientation of the input device used by the user based on data output from an inertial sensor
operatively coupled to the input device; and

presenting, on the display device, a presentation comprising an object that is individually controllable based on both the
acquired biological signal and the acquired information about aspects of motion and/or orientation of the input device, the
object is individually controllable in at least first and second directions based on, at least, the acquired biological signal.

US Pat. No. 9,617,563

RECOMBINANT CELL, AND METHOD FOR PRODUCING ?-PHELLANDRENE

TOHOKU UNIVERSITY, Miyag...

1. A recombinant Escherichia coli (E. coli) or Pichia yeast cell capable of producing ?-phellandrene, prepared by introducing at least one nucleic acid selected from the group
consisting of a nucleic acid encoding geranyl pyrophosphate synthase and a nucleic acid encoding neryl pyrophosphate synthase,
and a nucleic acid encoding ?-phellandrene synthase into a host cell in such a manner that these nucleic acids are expressed
in the host cell,
wherein the nucleic acid encoding geranyl pyrophosphate synthase encodes the following protein (a), (b) or (c):
(a) protein consisting of the amino acid sequence of SEQ ID NO:2,
(b) protein consisting of the amino acid sequence of SEQ ID NO:2 in which 1 to 20 amino acids are deleted, substituted or
added in the amino acid sequence, and having geranyl pyrophosphate synthase activity, or

(c) protein consisting of an amino acid sequence having a homology of 90% or more with SEQ ID NO:2, and having geranyl pyrophosphate
synthase activity,

wherein the nucleic acid encoding neryl pyrophosphate synthase encodes the following protein (d), (e) or (f):
(d) protein consisting of the amino acid sequence of SEQ ID NO:4,
(e) protein consisting of the amino acid sequence of SEQ ID NO:4 in which 1 to 20 amino acids are deleted, substituted or
added in the amino acid sequence, and having neryl pyrophosphate synthase activity, or

(f) protein consisting of an amino acid sequence having a homology of 90% or more with SEQ ID NO:4, and having neryl pyrophosphate
synthase activity, and

wherein the nucleic acid encoding ?-phellandrene synthase encodes the following protein (g), (h) or (i):
(g) protein consisting of the amino acid sequence of SEQ ID NO:6 or 8,
(h) protein consisting of the amino acid sequence of SEQ ID NO:6 or 8 in which 1 to 20 amino acids are deleted, substituted
or added in the amino acid sequence, and having ?-phellandrene synthase activity, or

(i) protein consisting of an amino acid sequence having a homology of 90% or more with SEQ ID NO:6 or 8, and having ?-phellandrene
synthase activity, and

wherein 10 mg or more of ?-phellandrene can be produced per 1 g of wet cells of the recombinant cell.
US Pat. No. 9,387,175

AGENT FOR EVADING IMMUNE RESPONSE

TOHOKU UNIVERSITY, Miyag...

1. A composition for avoiding immunostimulation on a dendritic cell and evading phagocytosis by a macrophage, comprising a
nanometer-sized metal simple substance or a nanometer-sized metal compound whose surface is modified with a RolA protein.

US Pat. No. 9,461,305

MAGNESIUM ALLOY FUEL CELL

Tohoku University, Miyag...

1. A magnesium alloy fuel cell comprising a negative electrode material comprising a magnesium alloy, and
an electrolytic solution for eluting magnesium ions from the negative electrode material,
wherein the magnesium alloy contains 3 wt % to 9 wt % aluminum and 1 wt % to 3 wt % calcium, and
wherein the content of lithium in the magnesium alloy is not more than 1 wt %.

US Pat. No. 9,379,572

CONTACTLESS POWER TRANSMITTING DEVICE, CONTACTLESS POWER RECEIVING DEVICE, AND CONTACTLESS POWER TRANSFER SYSTEM

TOYOTA JIDOSHA KABUSHIKI ...

1. A contactless power transmitting device comprising:
a power transmitting unit configured to contactlessly transmit electric power to a power receiving unit installed in a power
receiving device, the power receiving unit including a coil; and

a guide unit configured to change a guide position of the power receiving device on the basis of a type of the coil included
in the power receiving unit, the power receiving device being guided to the guide position at the time when the power receiving
device receives electric power, wherein

the guide unit is configured to, in the case where the type of the coil and a type of the power transmitting unit are the
same, set a position of the power receiving unit, at which a center position of the power receiving unit coincides with a
center position of the power transmitting unit, for the guide position, and

the guide unit is configured to, in the case where the type of the coil and the type of the power transmitting unit are different
from each other, set a position of the power receiving unit, at which the center position of the power receiving unit deviates
from the center position of the power transmitting unit, for the guide position.

US Pat. No. 9,354,240

PROBE FOR ANALYZING BIOLOGICAL TISSUE AND METHOD FOR UTILIZING SAME

TOHOKU UNIVERSITY, Miyag...

1. A method for separating cells or cell populations from a biological tissue, comprising:
applying two or more probes respectively containing biological-component binding domains of two or more proteases and two
or more visualization molecules to an isolated biological tissue,

measuring binding amounts of the probes to the biological tissue through the visualization molecules,
determining a quantitative ratio of the proteases based on results of the measurement,
applying the proteases in the quantitative ratio to the biological tissue, and
separating the cells or the cell populations from the biological tissue,
wherein each of the proteases is selected from the group consisting of collagenase, trypsin, chymotrypsin, dispase, elastase,
papain, pronase, thermolysin, subtilisin, bromelain, phytin, and thermitase, and

wherein each of the two or more visualization molecules is a molecule that is different from the other two or more visualization
molecules and that is selected from the group consisting of fluorescent molecules, luminescent molecules, and radioisotopes
including a positron nuclide.

US Pat. No. 9,327,190

STORAGE MEDIUM HAVING STORED THEREON INFORMATION PROCESSING PROGRAM, AND INFORMATION PROCESING DEVICE

Nintendo, Co., Ltd., Kyo...

1. A device, comprising:
a touch input device;
a vibration circuit;
an accelerometer for generating accelerometer data indicative of aspects of motion of the device;
wireless communication circuitry for receiving physiological data wirelessly transmitted from a physiological sensor; and
memory for storing the accelerometer data and the physiological data, wherein
the wireless communication circuitry wirelessly receives vibration circuit control signals for controlling the vibration circuit
and wirelessly transmits the physiological data and the acceleration data to a computing device comprising a processing system
for providing a presentation based on both the physiological data and the acceleration data.

US Pat. No. 9,476,137

METAL OXIDE FILM, LAMINATE, METAL MEMBER AND PROCESS FOR PRODUCING THE SAME

Tohoku University, Senda...

1. A metal oxide film manufacturing method for manufacturing an amorphous barrier metal oxide film for use as a coating film
for protecting a structural member of a semiconductor or flat panel display manufacturing apparatus, said method comprising:
anodizing a metal or metal alloy containing aluminum as a main component in an anodization solution of pH 4 to 10 and at an
anodization voltage of 150V or greater, thereby obtaining the amorphous barrier metal oxide film on the structural member
of a semiconductor or the flat panel display manufacturing apparatus formed of an oxide of the metal or metal alloy containing
aluminum as the main component,

wherein the anodization solution comprises mainly at least one nonaqueous solvent selected from the group consisting of ethylene
glycol, diethylene glycol, triethylene glycol, and tetraethylene glycol and the ratio of water to the nonaqueous solvent is
40 mass % or less based on the total amount of water and the total amount of the non-aqueous solvent, and wherein the anodization
solution further comprises at least one electrolyte selected from the group consisting of boric acid, phosphoric acid, organic
carboxylic acid, and salts thereof, and

wherein said metal or metal alloy containing aluminum has a total content of iron, copper, manganese, zinc, and chromium of
0.01 mass % or less,

wherein said amorphous barrier metal oxide film has a thickness of 10 nm to 1 ?m and a water release amount from said amorphous
barrier metal oxide film is 1E18 molecules/cm2 or less.

US Pat. No. 9,469,665

COMPOUND HAVING LYSOPHOSPHATIDYLSERINE RECEPTOR FUNCTION MODULATION ACTIVITY

THE UNIVERSITY OF TOKYO, ...

1. A compound represented by formula (I):

wherein R1 is C1-30 alkyl, C2-30 alkenyl, C2-30 alkynyl, or a group represented by formula: —(C1-15 alkylene)-Q1-Z1-(C1-15 alkylene)-Z2-Q2;

in which Q1 is C3-10 cycloalkylene, 5-10 membered heterocyclylene, C6-10 arylene, or 5-10 membered heteroarylene,

Q2 is a hydrogen atom, C3-10 cycloalkyl, 5-10 membered heterocyclyl, C6-10 aryl, or 5-10 membered heteroaryl, and Q2 may be substituted with -Z3-Q3,

Q3is C3-10 cycloalkyl, 5-10 membered heterocyclyl, C6-10 aryl, or 5-10 membered heteroaryl,

Z1, Z2, and Z3 are independently selected from the group consisting of an oxygen atom, a sulfur atom, —NR9—, difluoromethylene, and a direct bond,

wherein the alkyl, alkenyl, alkynyl, cycloalkylene, heterocyclylene, arylene, heteroarylene, cycloalkyl, heterocyclyl, aryl,
and heteroaryl may be independently substituted with one or more substituents selected from halo and hydroxy;

R2 is a hydrogen atom, C1-6 alkyl, C7-14 aralkyl, or C1-6 alkoxy C1-6 alkyl;

R3 is a hydrogen atom or C1-6 alkyl;

R4 and R5 are independently selected from the group consisting of a hydrogen atom, C1-6 alkyl, C7-14 aralkyl, formyl, C1-6 alkylcarbonyl, arylcarbonyl, C1-6 alkoxycarbonyl, C1-6 alkoxy C1-6 alkyl, and C7-14 aralkyloxycarbonyl;

R6 is a hydrogen atom, C1-6 alkyl, C1-6 alkoxy C1-6 alkyl, or C7-14 aralkyl;

R7 is a hydrogen atom or C1-6 alkyl,

R8 is C1-6 alkyl, in which the alkyl may be substituted with one or more substituents selected from the group consisting of hydroxy,
C1-6 alkoxy, C3-10 cycloalkyloxy, 5-10 membered heterocyclyloxy, C7-14 aralkyloxy, C6-10 aryloxy, and 5-10 membered heteroaryloxy, or

R7 and R8 together with the carbon atom which they are attached may form a ring, if and only if X is CH2, said ring selected from a C3-10 saturated carbocyclic ring, and 5-10 membered saturated or partially-saturated heterocyclic ring;

R9 is a hydrogen atom or C1-6 alkyl;

X is CH2 or a direct bond, with the proviso that if X is CH2, R7 and R8 together with a carbon atom which they are attached form a ring; and

Y is CH2 or a direct bond,

or a salt thereof.
US Pat. No. 9,462,801

METHOD FOR PRESERVING PANCREATIC ISLET, CONTAINER FOR PRESERVING PANCREATIC ISLET, AND KIT FOR TRANSPLANTING PANCREATIC ISLET

NIPRO CORPORATION, Osaka...

1. A method for preserving pancreatic islet, comprising a step of preserving a liquid containing pancreatic islet separated
and purified from a living body in a container, the container comprising
a wall face in contact with the liquid, wherein 100% of the total area of the wall face consists of a film having an oxygen
permeation coefficient of 3000 cm3/m2·day·atm or greater and a polymeric material that is low density polyethylene or a polymer blend of low density polyethylene
and medium density polyethylene, wherein the film has a pure water contact angle of 85 degrees or greater,

a bag-like figure produced of two of the films, and
a volume of the liquid such that the maximum value of the container thickness, the distance between the two films, is within
the range of 3 to 10 mm, when the liquid containing pancreatic islet is stored in the container and the container is placed
on a horizontal plane so that the film surface of the container contacts the plane,

wherein the pancreatic islet is suspended in the liquid so that adhesion of the pancreatic islet to the wall face is prevented,
wherein the pancreatic islet has a ?-cell activity represented by a survival rate of at least 25% after 1-4 days preservation
in the liquid,

wherein the method for preserving pancreatic islet is utilized for a pancreatic islet transplantation comprising 10 to 18
hours after isolating the pancreas to obtaining the pancreatic islet and 1 to 4 days during preservation of the pancreatic
islet to the completion of transplant operation of the pancreatic islet.

US Pat. No. 9,920,243

SCINTILLATOR, RADIATION DETECTOR, AND METHOD FOR DETECTING RADIATION

TOKUYAMA CORPORATION, Sh...

1. A method for detecting radiation by scintillation, comprising:
entering radiation, at a high temperature of not lower than 100° C., into a scintillator, the scintillator comprising a colquiriite-type
crystal represented by the following chemical formula:

LiM1M2X6
wherein M1 represents at least one alkaline earth metal element selected from the group consisting of magnesium (Mg), calcium (Ca), strontium
(St) and barium (Ba), M2 represents at least one metal element selected from the group consisting of aluminum (Al), gallium (Ga) and scandium (Sc),
and X represents at least one halogen element selected from the group consisting of fluorine (F), chlorine (Cl), bromine (Br)
and iodine (I),
to emit fluorescence; and
detecting the fluorescence by a photodetector.
US Pat. No. 9,468,226

FEED ADDITIVE, FEED, AND METHOD FOR PRODUCING FEED

Tohoku University, Senda...

1. A method for preparing a feed which comprises: a step for extracting a polyphenol, ?-tocopherol and xyloses from EFB, and
preparing an additive for a feed that includes the extracted polyphenol, ?-tocopherol and xyloses; and a step for adding the
additive for a feed to a formulating material for a feed.
US Pat. No. 10,034,889

PHARMACEUTICAL COMPOSITION INCLUDING MIGRATORY FACTOR FOR GUIDING PLURIPOTENT STEM CELLS TO DAMAGE

CLIO, INC., Akita (JP) T...

1. A method for activating migration of pluripotent stem cells, the method comprising: administering a compound to a subject that activates sphingosine-1-phosphate receptor 2 as an active ingredient thereof, wherein the compound is selected from the group consisting of 1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl)-5-(trifluoromethyl) pyridin-2(1H)-one, 1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl)-3-methylimidazolindine-2,4,5-trione, 1-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-((1-methyl-1H-tetrazol-5-yl)thio)ethanone, and (S)-1-(2-(1-benzyl-2,5-dimethyl-1H-pyrrol-3-yl)-2-oxoethyl-2?,3?-dihydrospiro[imidazolidine-4,1?-indene]-2,5-dione, to thereby activate migration of pluripotent stem cells.

US Pat. No. 9,463,188

OSTEOPONTIN PRODUCTION INHIBITOR CONTAINING DICTYOPYRONE DERIVATIVE OR DIHYDRODICTYOPYRONE DERIVATIVE AS ACTIVE INGREDIENT

TOHOKU UNIVERSITY, Senda...

1. An osteopontin production inhibitor comprising a compound dictyopyrone derivative represented by the following chemical
formula 1 as an active ingredient:

US Pat. No. 9,496,474

THERMOELECTRIC CONVERSION APPARATUS

NEC CORPORATION, Tokyo (...

1. A thermoelectric conversion apparatus, comprising:
a substrate; and
a power generation part formed on the substrate for generating a thermoelectric power,
wherein the power generation part comprises a first magnetic layer and a second magnetic layer and an electrode layer comprising
a material exhibiting a spin-orbit interaction and formed on the magnetic layer,

wherein the substrate and the power generation part have flexibility, respectively,
wherein the thermoelectric conversion apparatus further comprises a cover layer having flexibility and formed on the substrate
so as to cover at least the power generation part, and

wherein the a first magnetic layer is formed on one of front and back layer surfaces of the electrode layer and the second
magnetic layer is formed on another of the front and the back layer surfaces of the electrode layer.

US Pat. No. 9,812,302

MAGNETRON SPUTTERING APPARATUS

NATIONAL UNIVERSITY CORPO...

1. A magnetron sputtering apparatus comprising a backing plate to which a target is held facing a substrate to be processed,
and a magnet disposed on a back side of said target relative to said substrate, and adapted to confine plasma on a target
surface by forming a magnetic field on the target surface using said magnet, wherein:
said magnet comprises a rotary magnet group having a plurality of plate magnets arranged on outer periphery of a columnar
rotary shaft facing said plate magnets' surface to a radial direction of the columnar rotary shaft such that the plate magnets
are bonded to a surface of the columnar rotary shaft so as to form a plurality of helices and a fixed outer circumferential
frame magnet which is arranged in parallel with the target surface around said rotary magnet group and which is magnetized
in a direction perpendicular to the target surface;

a magnetic field pattern on the target surface moves with time by rotating said rotary magnet group along with said columnar
rotary shaft;

said magnetron sputtering apparatus comprises a shielding member disposed on an opposite side of said target with respect
to said rotary magnet group so as to cover an end portion of said target and to be spaced apart from said target, said shielding
member being electrically grounded, and said shielding member extends in a direction the same as an axial direction of said
columnar rotary shaft and forms a slit opening said target to said substrate; and

said substrate is placed on a substrate placing stage and, while plasma is excited on the target surface by applying a DC
power, a RF power, or a DC power and a RF power simultaneously to said target, said substrate is placed under the slit, and
a distance between an upper surface of said substrate or said substrate placing stage and a lower surface of said shielding
member is shorter than a mean free path of electrons in said plasma at a position of said shielding member and,

said substrate moves in parallel with the target surface and is placed at a retreated position of said substrate which is
other than under the slit upon plasma ignition or extinction, and a distance in a vertical direction between the upper surface
of said substrate or said substrate placing stage and the lower surface of said shielding member is shorter than a mean free
path of electrons at a position of said shielding member, and a distance in a parallel direction between an end portion of
said substrate at a side of the slit and an end portion of said shielding member at a side of the slit is longer than the
mean free path of electrons at the position of said shielding member.

US Pat. No. 9,466,363

INTEGRATED CIRCUIT

TOHOKU UNIVERSITY, Senda...

1. An integrated circuit, comprising:
a memory element where write into the memory element occurs when specified period ? has elapsed after a write signal is input
to the integrated circuit; and

a basic circuit including elementary devices that constitute a circuit, the basic circuit having a data retaining function,
wherein an operation frequency f1 in a first operation mode of memory access of the basic circuit satisfies the following relation:

?>?1/f1(0
wherein ?1 represents the ratio of time when write into the basic circuit is being performed in a cycle of the first operation mode (1/f1) of memory access of the basic circuit.

US Pat. No. 9,976,229

METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL

MITSUBISHI CHEMICAL CORPO...

1. A method for producing a nitride single crystal, the method comprising:growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure in a reaction vessel comprising. therein the seed crystal, a nitrogen-containing solvent, a mineralizer comprising a fluorine atom, and a raw material, at a pressure in the reaction vessel of 5 to 177 MPa with the nitrogen-containing solvent in at least one of a supercritical state and a subcritical state,
wherein in the reaction vessel, the temperature of a region where the raw material is dissolved is lower than the temperature of a region where the nitride crystal is grown on the surface of the seed crystal, and
wherein one or both of the following conditions apply:
a) the pressure in the reaction vessel is 10 to 156 MPa;
b) the temperature of the region where the raw material is dissolved is lower than the temperature of the region where the nitride crystal is grown on the surface of the seed crystal by 30° C. - 150° C.

US Pat. No. 9,478,309

MAGNETIC-DOMAIN-WALL-DISPLACEMENT MEMORY CELL AND INITIALIZING METHOD THEREFOR

NEC CORPORATION, Tokyo (...

1. A magnetic wall displacement type memory cell, comprising a recording layer comprising a magnetic film,
the recording layer comprising:
a magnetization reversal region in which magnetization is reversible; and
at least two magnetization fixed regions that supply a spin-polarized electron to the magnetization reversal region,
wherein the magnetic wall displacement type memory cell is configured so that a first region in which magnetization reversal
occurs due to a first current flowing in a direction parallel to a film surface of the recording layer and a first magnetic
field component in the direction parallel to the film surface of the recording layer is formed, and a second region in which
no magnetization reversal occurs is formed.

US Pat. No. 9,406,869

SEMICONDUCTOR DEVICE

NEC CORPORATION, Tokyo (...

1. A semiconductor device, comprising:
a first magnetic layer disposed on a flat substrate surface;
a second magnetic layer disposed above the first magnetic layer and magnetically coupled to the first magnetic layer by magnetostatic
coupling or exchange coupling; and

a third thin film layer formed between the first magnetic layer and the second magnetic layer, the third thin film layer having
such a thickness as to avoid inhibiting the magnetic coupling between the first magnetic layer and the second magnetic layer,

wherein the second magnetic layer comprises a first island pattern and a second island pattern which are formed by etching
the second magnetic layer so that a surface of the third thin film layer is exposed, and

wherein the third thin film layer comprises a film layer inserted for detection of an etching end point when the second magnetic
layer is etched.

US Pat. No. 9,332,957

EVALUATION AID

National University Corpo...

1. An evaluation aid adapted to be used for taking a digital X-ray image thereof, wherein evaluation is carried out through
the digital X-ray image, the evaluation aid comprising:
a combined body having:
a plate-like body including a plurality of regions having different X-ray absorption ratios; and
block-like bodies provided on the plate-like body so as to correspond to the plurality of regions, respectively, each block-like
body including a plurality of subregions having different X-ray absorption ratios,

wherein each of the plurality of regions of the plate-like body has a part exposed from the block-like body provided thereon
and to an outside of the combined body, the part existing so as to surround the block-like body, and each block-like body
is also exposed to the outside of the combined body.

US Pat. No. 10,037,789

MAGNETIC MEMORY AND METHOD FOR WRITING DATA INTO MAGNETIC MEMORY ELEMENT

NEC CORPORATION, Tokyo (...

1. A magnetic memory, comprising:a recording layer formed as a perpendicular magnetic film;
an adjacent layer joined to an upper surface or a lower surface of the recording layer;
an external magnetic field application part configured to apply a first external magnetic field to the recording layer in a first direction which is an in-plane direction of the recording layer; and
a current application circuit configured to allow a write current to flow through the adjacent layer and the recording layer in the first direction or a second direction which is opposite to the first direction,
wherein the recording layer, the adjacent layer, and the external magnetic field application part are configured to switch any one of a first magnetic field application direction, a second magnetic field application direction, and a third magnetic field application direction in accordance with a direction of the write current, the first magnetic field application direction being a direction of a second external magnetic field applied in a third direction which is another in-plane direction of the recording layer and which is perpendicular to the first direction, the second magnetic field application direction being a direction of a sum of an effective magnetic field caused by field-like torque generated when the write current flows through the adjacent layer and the recording layer and an Oersted field generated when the write current flows through the adjacent layer, the third magnetic field application direction being a direction of an actual magnetic field which is a sum of the second external magnetic field, the effective magnetic field, and the Oersted field, and
wherein the second magnetic field application direction is adjusted to be substantially equal to the third direction by adjusting materials and thicknesses of the adjacent layer and the recording layer.
US Pat. No. 9,844,570

PLURIPOTENT STEM CELL THAT INDUCES REPAIR AND REGENERATION AFTER MYOCARDIAL INFARCTION

CLIO, INC., Akita (JP) G...

1. A method for treating a myocardial infarction in a subject in need thereof, the method comprising:
administering to said subject a cell preparation containing a cell fraction comprising a population of pluripotent stem cells
positive for SSEA-3, wherein the population of pluripotent stem cells is isolated from mesenchymal tissue or cultured mesenchymal
cells by selecting for SSEA-3 positive cells, wherein the population of pluripotent stem cell is concentrated, wherein the
pluripotent stem cells have a plurality of properties comprising:

(i) CD105-positivity;
(ii) low or absent telomerase activity;
(iii) ability to differentiate into embryonic endoderm, ectoderm, and mesoderm germ layers; (iv) absence of neoplastic proliferation;
and

(v) ability to self-renew, and wherein the size of the myocardial infarction in the subject is reduced in comparison to a
control subject that did not receive said cell preparation, thereby treating a myocardial infarction in a subject in need
thereof.

US Pat. No. 9,562,868

COMBUSTION EXPERIMENTAL APPARATUS

TOHOKU UNIVERSITY, (JP) ...

1. A combustion experimental apparatus comprising:
a test tube in which flames are formed and in which an internal flow path thereof has a diameter less than a flame-quenching
distance in a normal temperature;

a supply device to supply a premixed gas produced by mixing fuel and oxidizing agent into the test tube;
a flame position-obtaining device to obtain positions of flames inside the test tube; and
a temperature-adjusting fluid supply device to cause a temperature-adjusting fluid to flow along the test tube,
wherein the temperature-adjusting fluid supply device includes:
a heater configured to adjust the temperature of a fluid and to change the fluid into the temperature-adjusting fluid; and
a guide part configured to guide the temperature-adjusting fluid from a first end toward a second end of the test tub;
wherein the heater is formed into a cylindrical shape surrounding the first end of the test tube,
wherein the guide part is formed into a tube shape surrounding the test tube, and an end of the guide part in an axial direction
thereof contacts an end of the heater in an axial direction thereof, and

wherein the temperature-adjusting fluid supply device is configured to cause the temperature-adjusting fluid to flow from
the first end toward the second end of the test tube through a space between the test tube and the heater and a space between
the test tube and the guide part.

US Pat. No. 9,478,503

INTEGRATED DEVICE

TOHOKU UNIVERSITY, Senda...

1. An integrated device made up of a plurality of different types of devices separated from one another and mechanically joined
together, wherein
each device comprises a functional element mounted onto a substrate,
a groove having a side surface containing an inclined surface is formed between adjacent substrates,
when a front surface is in a side of the integrated device where the functional element is mounted, the inclined surface makes
the groove to become narrower along the direction from the front surface to a back surface of the integrated device,

an insulating material is disposed at the groove, and adapted so that the plurality of substrates are mechanically joined
together, while the devices are electrically insulated from one another.

US Pat. No. 9,338,378

SOLID-STATE IMAGING DEVICE HAVING PLURAL RESET DEVICES FOR RESETTING SIGNAL LINES

OLYMPUS CORPORATION, Tok...

1. A solid-state imaging device comprising:
a plurality of pixels arranged in both row and column directions, each of the pixels comprising:
a photoelectric conversion element for photoelectrically converting incident light so as to accumulate signal charges; a charge-voltage
conversion terminal for voltage-converting signal charges accumulated in the photoelectric conversion element into voltage
signals; a voltage signal output means for amplifying signals voltage-converted by the charge-voltage conversion terminal;
a transfer means for transferring signal charges accumulated in the photoelectric conversion element to the charge-voltage
conversion terminal; and a first reset means for switching between conduction and disconnection to a power source having a
first reset voltage for the charge-voltage conversion terminal by on-off control;

a plurality of first signal lines capable of being kept in a floating potential state, each of the first signal lines being
connected to each of the pixels in each column;

a first scanning means for selecting the pixels that output respective signals to the respective first signal lines via the
voltage signal output means corresponding to each of the pixels; and

a second reset means for switching between conduction and disconnection to a power source having a second reset voltage for
the first signal lines by on-off control,

wherein the solid-state imaging device executes a noise signal read-out operation in which each of the first signal lines
is reset to the second reset voltage by turning on the second reset means and then rendered to be in a floating potential
state by turning off the second reset means; each of the charge-voltage conversion terminals in the respective pixels in one
row selected by the first scanning means is reset to the first reset voltage by turning on the first reset means and then
rendered to be in a floating potential state by turning off the first reset means; individual voltages at the respective charge-voltage
conversion terminals are read out to the respective first signal lines in the floating potential state via the voltage signal
output means corresponding to each of the respective charge-voltage conversion terminals for a predetermined period of time
so that the voltages are stored in the respective first signal lines; and the voltages stored in the respective first signal
lines are read out so as to output noise signals from the respective pixels in the one row, and

wherein the solid-state imaging device executes an optical signal read-out operation in which each of the first signal lines
is reset to the second reset voltage by turning on the second reset means and then rendered to be in a floating potential
state by turning off the second reset means; individual signal charges accumulated in the respective photoelectric conversion
elements are transferred to the respective charge-voltage conversion terminals by the transfer means corresponding to each
of the respective photoelectric conversion elements in the respective pixels in one row selected by the first scanning means;
individual voltage signals voltage-converted by the respective charge-voltage conversion terminals are read out to the respective
first signal lines in the floating potential state via the voltage signal output means corresponding to each of the respective
charge-voltage conversion terminals for the predetermined period of time so that the voltage signals are stored in the respective
first signal lines; and the voltages stored in the respective first signal lines are read out so as to output optical signals
from the respective pixels in the one row.

US Pat. No. 10,046,971

NITROGEN-CONTAINING CARBON MATERIAL AND METHOD OF MANUFACTURING THE SAME

Stella Chemifa Corporatio...

1. A nitrogen-containing carbon material comprising:a carbon material having a carbon skeleton formed of carbon atoms; and
a nitrogen atom introduced into the carbon material,
wherein part of the carbon atoms in the carbon skeleton are replaced with nitrogen atoms, at least one amino group is attached to a surface of the nitrogen-containing carbon material, carbon-fluorine bonds are present on a surface of the nitrogen-containing carbon material and nitrogen-fluorine bonds are not present on the nitrogen-containing carbon material.

US Pat. No. 9,767,994

SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME

TOKYO ELECTRON LIMITED, ...

1. A method of manufacturing a shower plate which is to be disposed in a plasma processing apparatus and to discharge a plasma
excitation gas so as to generate plasma in the plasma processing apparatus, the method comprising:
providing a first ceramic member having a plurality of vertical holes, wherein the plurality of vertical holes are to be release
paths for the plasma excitation gas;

fitting each of a plurality of second ceramic members and each of a plurality of porous gas-communicating bodies into each
of the vertical holes, wherein each of the second ceramic members has a plurality of gas release holes and each of the porous
gas-communicating bodies has pores which communicate in a gas-communicating direction; and

sintering the first ceramic member, and the second ceramic members and the porous gas-communicating bodies which are fitted
into the vertical holes of the first ceramic member.

US Pat. No. 9,618,741

OPTICAL SCANNING APPARATUS

OLYMPUS CORPORATION, Tok...

1. An optical scanning apparatus comprising:
an optical fiber that guides illumination light emitted from a light source so that the illumination light is emitted from
an emission end;

an elongated magnetic body that is fixed to an outer surface of the optical fiber, the elongated magnetic body being arranged
in a direction in which a longitudinal direction thereof is parallel to a longitudinal direction of the optical fiber; and

a plurality of coils that change a magnetic field to act on the elongated magnetic body to displace a position of the emission
end in a direction orthogonal to the longitudinal direction of the optical fiber by magnetic force,

wherein:
a winding axis of at least one individual coil of the plurality of coils is offset in the longitudinal direction of the optical
fiber relative to a winding axis of at least one other individual coil of the plurality of coils; and

at least a portion of each of the individual coils of the plurality of coils overlap with at least a portion of the elongated
magnetic body in the longitudinal direction.

US Pat. No. 9,433,466

OPTICAL FIBER AND AN UNDERWATER SHOCKWAVE GENERATING DEVICE EMPLOYING THE SAME

TOHOKU UNIVERSITY, Miyag...

1. An optical fiber for use in an underwater shockwave generating device that generates an underwater shockwave by irradiating
a laser beam underwater, said optical fiber comprising;
a linear main body part and a laser beam convergence part disposed on a front end thereof,
wherein the laser beam convergence part has a central longitudinal axis and a radius extending from the central longitudinal
axis to an outer circumference of the laser beam convergence part gradually decreases toward a front end of the laser beam
convergence part,

wherein the laser beam convergence part has an approximate solid truncated cone shape where a leading end has a planar surface
perpendicular to the axis,

wherein an interior angle with respect to a radial direction of a lateral face of an axial cross-section of the laser beam
convergence part continuously or non-continuously and gradually decreases toward the front, and

wherein an outer surface of the laser beam convergence part is configured to be a mirror surface by mirror finishing.

US Pat. No. 9,419,279

VANADIUM BATTERY

TOHOKU UNIVERSITY, Senda...

1. A vanadium redox rechargeable battery, comprising:
a first vanadium mixture; and
a second vanadium mixture,
wherein the first vanadium mixture contains a surface that is composed of a negative electrode,
the second vanadium mixture contains a surface that is composed of a positive electrode,
the first vanadium mixture contains a solid first vanadium compound, whose oxidation number changes between 2 and 3 due to
oxidation or reduction reactions,

the second vanadium mixture contains a solid second vanadium compound, whose oxidation number changes between 5 and 4 due
to reduction or oxidation reactions,

the first vanadium compound is selected from any one of or combination of the following: salt or hydrate salt with sulfate,
chloride, fluoride, or coordination compound of vanadium,

the second vanadium compound is selected from any one of or combination of the following: salt or hydrate salt with sulfate,
chloride, fluoride, or coordination compound of vanadium, and

a conductive material,
wherein at least one of the first vanadium mixture and the second vanadium mixture is supported, dried and solidified on a
surface of the conductive material.

US Pat. No. 9,803,269

?+? TYPE TITANIUM ALLOY AND PRODUCTION METHOD THEREFOR

NHK SPRING CO., LTD., Ka...

1. An ?+? titanium alloy comprising:
an ultrafine structure consisting of equiaxial crystals in which area ratio of crystals having a grain diameter of 1 ?m or
less is 60% or more, and a maximum frequency grain diameter is 0.5 ?m or less;

wherein a portion in which an integration degree of plane orientation (0001) of a hexagonal close-packed crystal is 1.00 or
more exists within a range of 0 to 60 degrees with respect to a normal line of a processed surface of the alloy.

US Pat. No. 9,739,675

SURFACE ACOUSTIC WAVE SENSOR

DENSO CORPORATION, Kariy...

1. A surface acoustic wave sensor comprising:
a surface acoustic wave material to be arranged at a place where the surface acoustic wave material is distorted by physical
quantity; and

a comb-teeth electrode arranged on the surface acoustic wave material to excite a surface acoustic wave to the surface acoustic
wave material, wherein

the surface acoustic wave material has a sapphire board and a ScAlN film arranged on a surface of the sapphire board, and
the surface acoustic wave material is arranged at the place where a stress in a propagation direction of the surface acoustic
wave and a stress in a perpendicular direction perpendicular to the propagation direction are applied to the surface acoustic
wave material.

US Pat. No. 9,574,213

METHOD OF ORGANIC ACID FERMENTATION BY RUMEN FLUID USING CELLULOSE-CONTAINING WASTE MATTER

TOHOKU UNIVERSITY, Senda...

1. A method for increasing the amount of acetic acid during the production of organic acids to serve as the raw material for
methane fermentation comprising:
combining isolated rumen fluid collected from a ruminant with cellulose-containing waste and cysteine to form a reaction mixture;
and

producing acetic acid from said reaction mixture under anaerobic conditions,
wherein said cysteine is present at a concentration of 0.1-0.25% by weight of the whole reaction mixture,
wherein said rumen fluid comprises a microorganism that produces acetic acid, and
wherein the production of acetic acid is increased relative to the production of acetic acid from a reaction mixture without
said cysteine.

US Pat. No. 9,555,423

FLUID INJECTION DEVICE

SEIKO EPSON CORPORATION, ...

1. A fluid injection device comprising:
a fluid chamber to which fluid is configured to be supplied;
an actuator configured to change a pressure in the fluid chamber;
an inlet flow passage and an outlet flow passage connected to the fluid chamber;
a fluid injection opening connected to the outlet flow passage; and
a fluid supply pump connected to the inlet flow passage and configured to supply fluid to the fluid chamber,
wherein an inertance of the inlet flow passage is greater than that of the outlet flow passage, and
wherein flow passages between the fluid supply pump and the fluid chamber include no check valve that is configured to shut
the flow passages between the fluid supply pump and the fluid chamber based on increase of the pressure in the fluid chamber.

US Pat. No. 9,507,197

LIGHTING DEVICE AND DISPLAY DEVICE

Sony Corporation, Tokyo ...

1. A lighting device comprising:
a light guide plate;
a light source disposed on a side face of the light guide plate; and
a light modulation element disposed on a surface of or inside the light guide plate, and adhered to the light guide plate,
wherein the light modulation element has a pair of transparent substrates disposed separately and oppositely, a first electrode
provided on a surface of one of the pair of transparent substrates, a second electrode provided on a surface of the other
of the pair of transparent substrates, and a light modulation layer, provided in a gap between the pair of transparent substrates,
wherein a portion of the light modulation layer is configured to exhibit a light-scattering property and a light-transmitting
property with respect to light from the light source, wherein a degree of light scattering or light-transmission in the portion
of the light modulation layer depends on an intensity of an electric field in the portion of the light modulation layer,

wherein one or both of the first electrode and the second electrode include a plurality of partial electrodes, and
wherein first partial electrodes of the plurality of partial electrodes are adjacent to second partial electrodes of the plurality
of partial electrodes, and have irregular shapes on edges adjacent to the second partial electrodes.

US Pat. No. 9,449,948

CHIP SUPPORT SUBSTRATE, CHIP SUPPORT METHOD, THREE-DIMENSIONAL INTEGRATED CIRCUIT, ASSEMBLY DEVICE, AND FABRICATION METHOD OF THREE-DIMENSIONAL INTEGRATED CIRCUIT

TOHOKU UNIVERSITY, Senda...

1. A chip support substrate comprising:
a lyophilic region that is formed on the substrate and that absorbs a chip; and
a cathode and an anode that are formed on the substrate and in the lyophilic region, that generate electrostatic force in
the chip by applying a negative voltage to the cathode and applying a positive voltage to the anode.

US Pat. No. 9,808,217

BREAST CANCER DETECTION SYSTEM, BREAST CANCER DETECTION METHOD, BREAST CANCER DETECTION PROGRAM, AND COMPUTER-READABLE RECORDING MEDIUM HAVING BREAST CANCER DETECTION PROGRAM RECORDED THEREON

TOHOKU UNIVERSITY, Senda...

1. A breast cancer detection system for detecting an architectural distortion of the mammary gland included in an X-ray image
of the breast, the breast cancer detection system comprising:
a processor programmed to:
calculate a normal architecture model of the mammary gland that scatters in a fan shape from the nipple toward the greater
pectoral muscle with respect to the X-ray image of the breast;

extract orientations of linear components of an image texture of a region that form a shape of a shadow in the X-ray image
of the breast; and

compare the orientation of the mammary gland in the calculated normal architecture model and the extracted orientation with
respect to a region of interest in the X-ray image of the breast including architectural distortion candidates of the mammary
gland detected by preprocessing to: (i) calculate a feature quantity based on a difference between the orientations, and (ii)
determine whether the candidates are an architectural distortion of the mammary gland based on the feature quantity.

US Pat. No. 9,466,607

SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF PRODUCING THE SAME

TOHOKU UNIVERSITY, Senda...

1. A method of producing a semiconductor integrated circuit, comprising:
a step of layering three types of different layers on a substrate;
a step of forming an opening up to the surface of the substrate;
a step of etching a region functioning as a floating gate in the layers layered adjacent to the opening;
a step of depositing a semiconductor material in the opening including the region functioning as the floating gate;
a step of subjecting a region including the deposited semiconductor material to an anisotropic etching to form an opening
in a region in which a semiconductor pillar and a tunnel insulating layer are to be formed and to form the floating gate;

a step of depositing a tunnel insulating layer on a side wall of the opening formed by the anisotropic etching;
a step of depositing a semiconductor material on the opening surrounded by the tunnel insulating layer to form the semiconductor
pillar;

a step of etching the three types of different layers having etching selectivity to one another except for a layer including
the floating gate and a layer functioning as a separation layer between cells;

a step of forming another insulating layer on the floating gate, the layer functioning as the separation layer, and the tunnel
insulating layer;

a step of depositing, on the another insulating layer, a material to be used for a control gate; and
a step of etching the material to be used for the control gate so as to form the control gate and a word line.

US Pat. No. 9,409,491

PARKING ASSIST SYSTEM FOR VEHICLE, CONTACTLESS POWER TRANSMITTING DEVICE, AND CONTACTLESS POWER RECEIVING DEVICE

TOYOTA JIDOSHA KABUSHIKI ...

1. A parking assist system for a vehicle configured to contactlessly receive electric power,
the parking assist system comprising:
a detector configured to detect a coil type of a power transmitting portion of a power supply device installed at a parking
lot; and

an electronic control unit configured to set a target parking position of the vehicle based on the coil type of the power
transmitting portion and a position of the power transmitting portion,

the electronic control unit being configured to set the target parking position such that a center of a power receiving portion
mounted on the vehicle is located at a predetermined distance from a first axis along a second axis that intersects with the
first axis, when the coil type detected by the detector is a composite coil having a configuration such that an annular coil
and a solenoid coil are connected in series with each other, the annular coil being wound to surround the first axis, the
solenoid coil being located with respect to the annular coil such that the first axis extends through a side face center portion
of the solenoid coil, and the solenoid coil being wound to surround the second axis.

US Pat. No. 9,810,792

CRYSTAL MATERIAL, RADIATION DETECTOR, IMAGING APPARATUS, NONDESTRUCTIVE INSPECTION APPARATUS, AND LIGHTING APPARATUS

TOHOKU UNIVERSITY, Miyag...

1. A crystal material represented by a general formula (1):
(Gd1-x-y-zLaxMEyREz)2MM2O7  (1)

where ME is at least one selected from Y, Sc, and Lu; RE is at least one selected from Ce or Pr; MM includes at least Si and
Ge; and ranges of x, y, and z are represented by the following (i):

(i) 0.0?x+y+z<1.0, 0.05?x+z<1.0, 0.0?y<1.0, and 0.0001?z<0.05 (where, when RE is Ce, y=0 is an exception).

US Pat. No. 9,653,218

ELECTROLYTIC SOLUTION FOR ELECTRIC DOUBLE-LAYER CAPACITOR, AND ELECTRIC DOUBLE-LAYER CAPACITOR

IDEA INTERNATIONAL INC., ...

1. An electrolyte for an electric double-layer capacitor, wherein the electrolyte contains an atom ion encapsulated fullerene
therein.

US Pat. No. 9,568,364

PHOTODIODE AND METHOD FOR PRODUCING THE SAME, PHOTODIODE ARRAY, SPECTROPHOTOMETER AND SOLID-STATE IMAGING DEVICE

TOHOKU UNIVERSITY, Mayag...

1. A signal processing method for performing a signal processing based on a signal output from a photodiode depending on photocharges
generated in the photodiode by a light illumination, comprising:
performing a signal processing using a photodiode based on a signal output from the photodiode,
wherein the photodiode includes a semiconductor layer made of silicon and an insulator layer in contact with the semiconductor
layer,

wherein the semiconductor layer is provided with a first-conduction-type region and a second-conduction-type region located
between the first-conduction-type region and an interface between the semiconductor layer and the insulator layer, the second-conduction-type
region having a polarity opposite to the first-conduction-type region, and

wherein a thickness of a non-depleted region of the second-conduction-type region is larger than roughness of the interface,
and is smaller than a penetration depth of ultraviolet light at which an intensity of the ultraviolet light in a wavelength
range of 200-320 nm entering the semiconductor layer is equal to 1/e times the intensity of the same ultraviolet light at
an outermost surface of the semiconductor layer.

US Pat. No. 9,521,989

EVALUATION AID AND EVALUATION DEVICE

National University Corpo...

1. An evaluation aid adapted to be used for taking a digital X-ray dynamic image thereof, wherein evaluation is carried out
through the digital X-ray dynamic image, the evaluation aid comprising:
a driving portion having a rotational axis,
a housing that receives the driving portion therein,
a plate-like body provided along an outer periphery of the housing, the plate-like body including a plurality of regions having
different X-ray absorption ratios; and

a rotating disk detachably connected to the rotational axis of the driving portion, the rotating disk having a plurality of
wire rods, the rotating disk capable of rotating due to a rotation of the rotational axis so that the plurality of wire rods
traverse X-ray with which the plate-like body is irradiated.

US Pat. No. 9,645,145

SENSOR CHIP, DETECTION SYSTEM, AND METHOD OF DETECTING TARGET SUBSTANCE IN ANALYTE

TOHOKU UNIVERSITY, Senda...

1. A sensor chip comprising:
first and second electrodes that are exposed from the sensor chip and are made from materials different from each other;
a detection circuit that detects a target substance included in an analyte, the detection circuit being driven by a potential
difference between the first and second electrodes, the potential difference being generated by an oxidation at the first
electrode and a reduction at the second electrode while the analyte contacts the first and second electrodes, the analyte
including an electrolyte.

US Pat. No. 9,656,388

ROBOT, ROBOT SYSTEM, CONTROL DEVICE, AND CONTROL METHOD

Seiko Epson Corporation, ...

1. A robot comprising:
a hand; and
a control unit configured to operate the hand,
wherein the control unit is configured to move a first object toward a second object and is configured to operate the hand
to control a position and a posture of the first object relative to a predetermined position based on a captured image including
the hand and the first object, and

wherein the control unit includes:
a rotation center position calculation unit that detects a current position and a current posture of the first object, and
calculates a rotation center position and a rotation center posture based on the current position and the current posture
of the first object;

a target derivation unit that detects a position and a posture of the second object based on the captured image acquired by
an image acquisition unit and determines a target position and a target posture of the first object based on the captured
image and the position and the posture of the second object;

a movement operation amount calculation unit that determines a target operation amount of the first object, the target operation
amount being an amount the first object is moved by the hand to match the target position and the target posture; and

a robot control unit that calculates a target position and a target posture to which a force sensor is to move based on the
target operation amount of the first object and moves the force sensor by way of the hand so that the position and the posture
of the force sensor match the target position and the target posture of the force sensor.

US Pat. No. 10,126,166

SOLID LIGHT-RECEIVING DEVICE FOR UV LIGHT

Tohoku University, Miyag...

1. A solid-state light-receiving device for ultraviolet light, comprising:a semiconductor substrate having silicon (Si) as a main component, the semiconductor substrate including a first photodiode and a second photodiode, both of which are arranged so as not to three-dimensionally overlap with each other in effect; and
a differential circuit to which a first signal based on a first output from the first photodiode and a second signal based on a second output from the second photodiode are input,
(a) wherein the first photodiode includes a first semiconductor layer region of a first conductivity type, and a second semiconductor layer region of a second conductivity type, which is formed on the first semiconductor layer region and forms a semiconductor junction with the first semiconductor layer region, the second conductivity type being opposite to the first conductivity type,
(b) wherein the first semiconductor layer region has first concentrations of semiconductor impurities distributed in a layer thickness direction, and includes a highest concentration first position in the first distribution,
(c) wherein the second photodiode includes a third semiconductor layer region of the first conductivity type, and a fourth semiconductor layer region of the second conductivity type, which is formed on the third semiconductor layer region and forms a semiconductor junction with the third semiconductor layer region, the second conductivity type being opposite to the first conductivity type,
(d) wherein the third semiconductor layer region has second concentrations of semiconductor impurities distributed in the layer thickness direction, and includes a highest concentration second position in the second distribution,
(e) wherein the semiconductor substrate further includes a fifth semiconductor layer region of the first conductivity type formed on the second semiconductor layer region, the fifth semiconductor layer region having third concentrations of semiconductor impurities distributed in the layer thickness direction, and including a highest concentration third position in the third distribution,
(f) wherein the semiconductor substrate further includes a sixth semiconductor layer region of the first conductivity type formed on the fourth semiconductor layer region, the sixth semiconductor layer region having fourth concentrations of semiconductor impurities distributed in the layer thickness direction, and including a highest concentration fourth position in the fourth distribution,
(g) wherein the highest concentration first position and the highest concentration second position are the same in a direction of depth from a front surface of the semiconductor substrate, and
(h) wherein the highest concentration third position and the highest concentration fourth position are different in the direction of depth from the front surface of the semiconductor substrate.

US Pat. No. 10,008,961

POWER GENERATING DEVICE

NATIONAL UNIVERSITY CORPO...

1. A power generating device comprising:a power generating unit configured to generate electric power based on externally applied vibration, the power generating unit including:
a piezoelectric body deformable by the vibration to generate a voltage proportional to an amount of deformation, and
a pair of electrodes with the piezoelectric body disposed therebetween;
an inductor electrically connected to at least one of the pair of electrodes, wherein the inductor and a capacitance component of the piezoelectric body constitute a resonance circuit;
a switch connected to the inductor in series; and
a control circuit configured to control the switch to be in an ON state and an OFF state,
wherein the control circuit has a first control mode in which the control circuit controls the switch to switch from the OFF state to the ON state in synchronism with a timing at which the voltage generated in the piezoelectric body becomes a peak value,
wherein the control circuit has a second control mode in which the control circuit controls the switch to be in an OFF state regardless of the timing at which the voltage generated in the piezoelectric body becomes the peak value, and
wherein the control circuit operates in the second control mode after the first control mode when a frequency of the vibration corresponds to a natural frequency of the power generating unit.

US Pat. No. 9,564,152

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

TOHOKU UNIVERSITY, Senda...

1. A magnetoresistive element comprising:
a first non-magnetic layer containing oxygen;
a ferromagnetic layer having a bcc structure and containing Fe and B, disposed over the first non-magnetic layer, with an
interfacial perpendicular magnetic anisotropy at an interface therebetween that results in a magnetization direction of the
ferromagnetic layer oriented perpendicularly to the film plane so that the magnetoresistive element has a magnetoresistance
ratio (MR) equal to or greater than 70%; and

a second non-magnetic layer disposed over the ferromagnetic layer, the second non-magnetic layer containing a material with
a spin-orbit interaction smaller than that of Pt.

US Pat. No. 9,536,450

VISUAL TRAINING DEVICE, VISUAL TRAINING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM

TOYOTA JIDOSHA KABUSHIKI ...

1. A visual training device comprising:
a training image display unit that outputs a training image including at least to figures that appear in a peripheral portion
of a screen of a display;

a processed image output unit that superimposes the training image output from the training image display unit on a video
content received from a location that is outside of the visual training device, and outputs a resulting image to the display,
wherein

the video content received from the outside location includes one of pictures of a television program and pictures of a DVD,
the content of the training image is unrelated to the video content received from the outside location and the training image
is disposed at one or more fixed locations on the video content and is not dependent on a location of the video content, and

the at least two first figures are used as peripheral stimuli, and the video content is used as a central stimuli; and
a test image output unit that outputs a test image including the at least two first figures and a second figure, the brightness
of the second figure changing at substantially irregular intervals of time, wherein

the at least two first figures are presented at random, and the second figure is located at a middle of the screen of the
display, and

a rate of detection of the peripheral stimuli is calculated.

US Pat. No. 10,109,429

SOLAR CELL, MANUFACTURING METHOD THEREFOR, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR

Asahi Kasei Kabushiki Kai...

1. A semiconductor device, comprising at least one layer of a semiconductor layer including inorganic particles and an organic compound having relative permittivity of 5 or more and 100 or less, whereinthe inorganic particles include metal oxide particles or silicon particles,
content of the inorganic particles in the semiconductor layer is 10 mass % or more and 90 mass % or less,
the metal oxide particles are selected from one or more of the group consisting of copper oxide (I), copper oxide (II), iron oxide, zinc oxide, silver oxide, titanium oxide, zinc oxide doped with aluminum (AZO), zinc oxide doped with gallium (GZO), indium tin oxide (ITO), tin oxide, tin oxide doped with fluorine (FTO), indium oxide, indiumgalliumzinc oxide, nickel oxide, CuAlO2, CuGaO2, SrCu2O2, LaCuOS, LaCuOSe, CuInO2, ZnRh2O4, 12CaO.7Al2O3(C12A7), and Ga2O3,
the organic compound is selected from one or more of cyano group-containing organic compounds, and
the semiconductor layer has carrier mobility of 0.0001 cm2/Vs or more.

US Pat. No. 9,888,989

INTAKE DEVICE

KABUSHIKI KAISHA SANGI, ...

1. A dental intake device for providing extraoral suction during a dental treatment, comprising:
a suction hood including:
an intake opening into which a fluid flows;
a converging hood inner surface along which the fluid taken in by the intake opening flows; and
an exhaust opening configured to be operatively connected to a suction source such that the fluid taken in by the intake opening
is exhausted via the exhaust opening, wherein the converging hood inner surface continuously converges from the intake opening
to the exhaust opening so that the converging hood inner surface forms a truncated conical surface;

a flow straightening member having a tip and a base opposite to the tip, the flow straightening member being located within
the suction hood, the tip of the flow straightening member being closer to the exhaust opening than the intake opening so
that the tip is located between the intake opening and the exhaust opening, the flow straightening member having a convex
outer surface that is spaced apart from the converging hood inner surface forming a gap between the convex outer surface and
the converging hood inner surface, such that all of the fluid taken in by the intake opening flows through said gap; and

a support that fixes the flow straightening member to the suction hood,
wherein one part of the support is connected to the convex outer surface at a position which is located between the tip and
the base, and

another part of the support is connected to the converging hood inner surface.

US Pat. No. 9,577,182

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

TOHOKU UNIVERSITY, Senda...

1. A magnetoresistance effect element comprising a first magnetic layer of a fixed magnetization direction that is either
an upward direction or a downward direction in a thickness direction, a second magnetic layer of a variable magnetization
direction that can be varied upwardly or downwardly in a thickness direction, and a first non-magnetic layer disposed between
the first and second magnetic layers in a thickness direction of the first and second magnetic layers,
wherein the second magnetic layer has the following relationship between D (nm) and t (nm):
D<0.9t+13,

where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness
direction, and t is its layer thickness.

US Pat. No. 9,512,521

MANUFACTURING METHOD OF AND MANUFACTURING APPARATUS FOR METAL OXIDE FILM

RICOH COMPANY, LTD., Tok...

1. A method of manufacturing a ferrodielectric film made of a metal oxide film by the sol-gel method, comprising the steps
of:
soaking a first substrate on which the metal oxide film is to be foinied in a precursor solution for forming the ferrodielectric
film made of the metal oxide film, and accumulating the precursor solution in a solution holder;

installing a glass substrate at a predetermined position inside the solution holder such that the glass substrate contacts
an upper face of the precursor solution and is disposed above the first substrate and the precursor solution, to block an
opening of the solution holder;

collecting a light by lens onto an interface where the first substrate contacts the precursor solution, the light collected
by the lens passing through the glass substrate and the precursor solution; and

moving the light or the first substrate to scan the light while maintaining a condition of collecting the light passing through
the glass substrate and the precursor solution onto the interface, to heat and crystallize the precursor solution at the interface,
to form the ferrodielectric film made of the metal oxide film on the first substrate.

US Pat. No. 9,923,281

DUAL ANTENNA SYSTEM

NTT DOCOMO, INC., Chiyod...

1. A dual antenna system comprising:
a receiving antenna that includes a plurality of patches disposed on an upper surface of a substrate and a base plate disposed
on a lower surface of the substrate, an antenna aperture of the receiving antenna being determined in a surface orthogonal
to a radio wave receiving direction, and

a transmitting antenna that includes an upper driven element which is disposed on the upper surface of the substrate and connected
to the patches, a lower driven element which is disposed on the lower surface of the substrate and connected to the base plate
and the base plate serving as a reflection plate;

wherein an antenna aperture of the transmitting antenna is provided in a surface parallel to a radio wave transmitting direction,
and

wherein the patches, the upper driven element, and lines that connect the patches and the upper driven element are located
in a first common plane, and the base plate and the lower driven element are located in a second common plane, and wherein
the second common plane including the base plate, the substrate, and the first common plane including the patches are layered
in this order in the wave receiving direction.

US Pat. No. 9,957,406

METHOD FOR SMOOTHING A PERFLUORO ALKOXY ALKANE FILM SURFACE

TOHOKU UNIVERSITY, Senda...

1. A method for smoothing a film surface, comprising the steps of:(1) preparing a component having a film containing perfluoro alkoxy alkane (PFA) represented by formula 1

in which Rf is a perfluoro alkyl group and m and n are both positive integers, and the PFA has a melting point of 298° to 310° C.;
(2) exposing the component to an atmosphere with a temperature 30° to 70° C. higher than a melting temperature of said PFA so as to melt at least a free surface area of the film;
(3) exposing the component to the atmosphere with a temperature 5° to 60° C. lower than the melting temperature of said PFA so as to solidify at least a portion of said free surface area;
(4) remelting said portion of said free surface area by exposing the component to the atmosphere at a temperature of at least the melting temperature of said PFA to 15° C. above said melting temperature; and
(5) lowering a temperature of the atmosphere to room temperature so as to increase smoothness of the free surface area of the film, wherein
the PFA film is provided on a NiF2 film.

US Pat. No. 9,854,976

PULSE WAVE VELOCITY MEASUREMENT METHOD

FUJIFILM Corporation, To...

1. A pulse wave velocity measurement method comprising:
an imaging step of simultaneously imaging mutually different two parts from among plural parts of a user's human body in a
non-contact state by a single visible light camera and generating continuous time series image data, said single visible light
camera being configured for everyday use by the user;

a pulse wave detection step of detecting each pulse wave in the different two parts of the human body from the image data
based on a temporal change in pixel value of the different two parts of the human body; and

a pulse wave velocity calculation step of calculating a pulse wave velocity of the human body based on a time difference between
pulse waves in the different two parts of the human body.

US Pat. No. 9,806,156

LAMINATED BODY AND ELECTRONIC DEVICE

Sumitomo Electric Industr...

1. A laminated body comprising:
a substrate portion composed of silicon carbide; and
a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement
oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion,

a region in which a value of G?/G in Raman spectrometry is not less than 1.2 being not less than 10% of the area of an exposed
surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion,

the substrate portion has a disc-like shape, and
the substrate portion has a diameter of not less than 50 mm.

US Pat. No. 9,741,859

SEMICONDUCTOR DEVICE WITH GRAPHENE LAYER AS CHANNEL

Sumitomo Electric Industr...

1. A field effect transistor (FET), comprising:
a substrate;
a graphene layer provided on the substrate;
a gate insulating film provided on the graphene layer;
a source electrode and a drain electrode each provided in contact with the graphene layer;
a first gate electrode and a second gate electrode provided on the gate insulating film, the first gate electrode being disposed
closer to the source electrode, the second gate electrode being disposed closer to the drain electrode; and

an intermediate electrode provided between the first gate electrode and the second gate electrode and in contact with the
graphene layer, a substance of the intermediate electrode, the source electrode and the drain electrode being identical.

US Pat. No. 9,726,622

NON-DESTRUCTIVE INSPECTION DEVICE

Tohoku University, Senda...

1. A non-destructive inspection device, comprising a radiation source unit, a grating group and a radiation ray detector unit,
wherein:
the radiation source unit is configured to irradiate radiation rays having transmissivity to a subject toward the grating
group;

the grating group is composed of a plurality of gratings that transmit the radiation rays irradiated toward the grating group;
each of the plurality of gratings includes a plurality of grating members arranged at a predetermined period determined for
each grating;

the radiation ray detector unit is configured to detect the radiation rays diffracted by the plurality of grating members;
a radiation ray passage area through which the radiation rays irradiated from the radiation source unit and reaching the radiation
ray detector unit pass includes at least first to third partial areas;

the first to third partial areas are arranged at positions displaced from each other in a direction intersecting with an irradiation
direction of the radiation rays; and

when a part of the grating group located in a space through which each of the radiation rays to be transmitted through any
one of the first to third partial areas passes is called a reference grating partial group and parts of the grating group
located in spaces through which the radiation rays to be transmitted through the other ones of the first to third partial
areas pass are respectively called first and second grating partial groups, the grating members of some of the gratings included
in the reference grating partial group are arranged at the predetermined period in this grating, some of the gratings included
in the first grating partial group includes a grating member having a first phase difference with respect to the arrangement
at the predetermined period in some of these gratings, and some of the gratings included in the second grating partial group
includes a grating member having a second phase difference with respect to the arrangement at the predetermined period in
some of these gratings, wherein:

each of the first to third partial areas includes a mutually overlapping part and a non-overlapping part;
the grating member having the first phase difference and the grating member having the second phase difference are both arranged
in the non-overlapping parts; and

the radiation source unit is configured to irradiate the radiation rays to the first to third partial areas at different timings;
and

wherein:
one of the plurality of gratings is a G0 grating which constitutes a micro radiation source array,
a part of the G0 grating belonging to the reference grating partial group, a part of the G0 grating belonging to the first
grating partial group, and a part of the G0 grating belonging to the second grating partial group are arranged while being
spaced apart or adjacent in the direction intersecting with the irradiation direction of the radiation rays, and

the first and second phase differences are set between the part of the G0 grating belonging to the reference grating partial
group, the part thereof belonging to the first grating partial group, and the part thereof belonging to the second grating
partial group.

US Pat. No. 9,634,327

NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, METHOD FOR PRODUCING THE SAME, NEGATIVE ELECTRODE, AND BATTERY

TOHOKU UNIVERSITY, Miyag...

1. A negative electrode active material for a lithium ion secondary battery, comprising silicon, copper and oxygen as major
constitutional elements, the negative electrode active material for a lithium ion secondary battery, containing fine particles
of silicon having an average crystallite diameter (Dx) measured by an X-ray diffractometry using a half width of the (111) plane of the silicon phase of 50 nm or less, the negative
electrode active material having average elemental ratios measured by an enemy dispersive X-ray analysis in a measurement
field of 200 ?m×200 ?m, expressed by molar ratios, Cu/(Si+Cu+O) of from 0.02 to 0.30 and O/(Si+Cu+O) of from 0.02 to 0.30.

US Pat. No. 9,633,708

SEMICONDUCTOR STORAGE DEVICE USING STT-MRAM

Tohoku University, Senda...

1. A semiconductor memory device comprising:
a plurality of memory cells, each comprising a first MOSFET and a first MTJ serially connected thereto, arranged between one
of a pair of bit lines and one of a pair of source lines, a second MOSFET and a second MTJ serially connected thereto, arranged
between other of the pair of bit lines and other of the pair of source lines;

a third MOSFET; and
a fourth MOSFET;
wherein the drain of the third MOSFET is connected to one of the pair of bit lines, the drain of the fourth MOSFET is connected
to the other of the pair of bit lines, the gate of the third MOSFET is connected to the drain of the fourth MOSFET and the
gate of the fourth MOSFET is connected to the drain of the third MOSFET.

US Pat. No. 9,620,297

ELECTRICITY STORAGE DEVICE AND ELECTRODE MATERIAL THEREFOR

TOHOKU UNIVERSITY, Senda...

5. An electricity storage device comprising:
a positive electrode that contains a positive electrode active material including at least one of quinone and hydroquinone,
and a positive electrode porous body supporting the positive electrode active material;

a negative electrode that contains a negative electrode active material including at least one of quinone and hydroquinone,
and a negative electrode porous body supporting the negative electrode active material; and

an electrolyte located between the positive electrode and the negative electrode, wherein
the at least one of quinone and hydroquinone included in at least one of the positive electrode active material and the negative
electrode active material has a halogen group.

US Pat. No. 9,604,141

STORAGE MEDIUM HAVING GAME PROGRAM STORED THEREON, GAME APPARATUS, GAME SYSTEM, AND GAME PROCESSING METHOD

NINTENDO CO., LTD., Kyot...

1. A non-transitory computer-readable storage medium having stored thereon a game program that is executed by a computer of
a game apparatus that performs game processing on the basis of a designated position that is set in accordance with an operation
performed by a player with respect to an input device, the game program causing the computer to perform:
operation input obtaining for obtaining an operation input performed by the player with respect to the input device;
designated position setting for setting a designated position with respect to a virtual game world in accordance with the
operation input;

biological signal obtaining for obtaining a biological signal from the player;
designated position change for changing the designated position in accordance with the obtained biological signal; and
game processing for performing a predetermined game process on the basis of the designated position, wherein
the designated position change temporarily changes the designated position in accordance with the obtained biological signal,
and wherein,

when ending an operation for temporarily changing the designated position, the designated position change changes the designated
position such that a designated position after the end of the operation becomes the designated position that is set by the
designated position setting.

US Pat. No. 9,583,750

SECONDARY BATTERY

TOHOKU UNIVERSITY, Senda...

1. A secondary battery comprising:
a cathode collector;
a cathode body;
a solid electrolyte containing a supporting agent;
an anode body;
an anode collector; and
a polymeric layer inserted between the cathode body and the solid electrolyte,
wherein the cathode body is sealed by the polymeric layer and the cathode collector.

US Pat. No. 9,536,584

NONVOLATILE LOGIC GATE DEVICE

NEC CORPORATION, Tokyo (...

1. A nonvolatile logic gate device characterized by comprising:
a resistive network of a memory structure comprising at least three nonvolatile resistive elements which are combined with
each other and which exhibit a first combined resistance value in a low-resistance state and a second combined resistance
value in a high-resistance state;

a reference resistive network comprising a same number of nonvolatile resistive elements as the resistive network of the memory
structure and a reference resistance value between the first combined resistance value and the second combined resistance
value;

a writing part configured to selectively put the resistive network into the low-resistance state or the high-resistance state
by selectively writing the first combined resistance value and the second combined resistance value into the resistive network;
and

a logic circuit structure configured to determine a resistance value of the resistive network to selectively sat the resistive
network into the low-resistance state or the high-resistance state by comparing each of the first combined resistance value
and the second combined resistance value with the reference resistance value.

US Pat. No. 10,018,689

ELECTRONIC DEVICES

CAMBRIDGE ENTERPRISE LIMI...

1. A method of detecting an electrical signal from a spin-current, wherein said spin-current comprises a current having a spin predominantly aligned in a spin direction, the method comprising:flowing said spin-current through a layer of organic material in a vertical direction through said layer; and
detecting a charge current or an electric field in a lateral direction in said layer of organic material, wherein said layer of organic material has an anisotropic electrical conductivity, having a higher conductivity in said lateral direction, which defines a high conductivity direction, than in said vertical direction, which defines a low conductivity direction;
injecting the spin-current in the low conductivity direction; and
converting the injected spin-current into the charge current, wherein the charge current flows in the high conductivity direction, said converting comprising converting the spin-current into the charge current in the layer of organic material using the Inverse Spin Hall effect.
US Pat. No. 9,938,459

ALKALINE EARTH METAL SILICATE PHOSPHOR AND METHOD FOR PRODUCING SAME

SUMITOMO METAL MINING CO....

1. A method for producing an alkaline earth metal silicate phosphor being represented by composition formula (1):(SraCabBacEud)2SieOf
wherein
a, b, c, d, e and f satisfy 0.4 the method comprising:
a gel body forming step of mixing and stirring an aqueous solution of an alkaline earth metal other than barium and an europium compound, and an aqueous solution of a water-soluble silicon compound that is mixture of tetraethoxysilane and a dihydric alcohol with addition of acid as a catalyst to form a gel body;
a drying step of drying the gel body obtained in the gel body forming step;
a calcining step of calcining a dried matter obtained in the drying step in a temperature condition of from 600° C. to 1,400° C. in an air atmosphere; and
a firing step of mixing a calcined powder obtained in the calcining step with a flux including at least barium chloride, followed by firing in a temperature condition of from 1,000° C. to 1,350° C. under a reducing atmosphere.

US Pat. No. 9,875,899

SEMICONDUCTOR TRANSISTOR

FUJI ELECTRIC CO., LTD., ...

1. A semiconductor transistor, comprising:
an active layer composed of a Mg-doped GaN-based semiconductor having an Mg concentration of from 1×1016/cm3 to 1×1017/cm3; and

a gate insulating film having
a first insulating film including one or more compounds selected from the group consisting of insulating films in which an
absolute value of standard enthalpy of formation is larger than 228 kJ/mol, Al2O3, HfO2, ZrO2, La2O3, and Y2O3, and

a second insulating film composed of SiO2 directly on the first insulating film, wherein the first insulating film is directly on the active layer.

US Pat. No. 9,753,100

MAGNETIC SENSOR

DENSO CORPORATION, Kariy...

1. A magnetic sensor comprising:
a magnetization fixed layer formed into a thin-film shape and having a magnetization direction fixed to a direction parallel
to an in-plane direction;

a magnetic field detecting layer having a magnetization direction that changes depending on an external magnetic field; and
an intermediate layer disposed between the magnetization fixed layer and the magnetic field detecting layer and having a resistance
value that changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization
direction of the magnetic field detecting layer, wherein

a magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].

US Pat. No. 9,719,927

LIGHT POLARIZATION ANALYZER

TOHOKU UNIVERSITY, Senda...

1. A light polarization analyzer comprising:
an excitation light source that emits an excitation light polarized in a predetermined direction to a sample to be measured;
an image sensor comprising a plurality of pixels arranged in a one-dimensional manner or otherwise a two-dimensional manner
so as to receive a measurement light generated from the sample in response to the excitation light;

a polarization selector that is arranged between the sample and the image sensor, that comprises a plurality of pixels arranged
in a one-dimensional manner or otherwise a two-dimensional manner, and that is configured such that each pixel receives a
corresponding portion of the measurement light, selects the measurement light having a polarization direction that corresponds
to a driving signal applied to the pixel, and supplies the selected measurement light to the image sensor; and

a measurement control unit that supplies the driving signal configured as a cyclic signal having a first period T1 to each pixel of the polarization selector, and that acquires data I1 through IN that represent values obtained by integration, addition, or accumulation of the input light input to each pixel of the image
sensor for exposure time segments T2_1 through T2_N, each of which have an exposure period T2=T1/N obtained by dividing the first period T1 by N (N represents a plural integer),

wherein the light polarization analyzer measures a polarization state of a corresponding portion of the measurement light
for each pixel based on the corresponding data I1 through IN acquired for the corresponding pixel of the image sensor.

US Pat. No. 9,617,649

POROUS STRUCTURE PROVIDED WITH A PATTERN THAT IS COMPOSED OF CONDUCTIVE POLYMER AND METHOD OF MANUFACTURING THE SAME

TOHOKU UNIVERSITY, Miyag...

1. An electrode, comprising:
a porous body made of gel; and
a pattern that is composed of conductive polymer provided only on the porous body, wherein the gel is composed of hydrogel,
and

wherein the pattern that is composed of conductive polymer is contacted to cells or tissue.

US Pat. No. 9,450,177

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

TOHOKU UNIVERSITY, Senda...

1. A magnetoresistive element comprising:
a reference layer having a fixed magnetization direction and including a ferromagnetic material containing Fe;
one non-magnetic layer that is directly formed on one surface of the reference layer and that includes an insulator containing
oxygen;

a recording layer that is directly formed on one surface of the one non-magnetic layer, which is opposite to another surface
on which the reference layer is formed, the recording layer having a variable magnetization direction and including a ferromagnetic
material containing at least one type of 3d transition metal; and

another non-magnetic layer that is directly formed on another surface of the reference layer so that the reference layer is
formed between the one and the other non-magnetic layers and the one and the other non-magnetic layers are both external to
the reference layer, the other non-magnetic layer including an insulator containing oxygen, wherein

the reference layer, and the one and the other non-magnetic layers are arranged so that a magnetization direction of the reference
layer is controlled to be perpendicular to a layer surface of the reference layer by perpendicular magnetic anisotropy at
interfaces between the reference layer and the one non-magnetic layer, and between the reference layer and the other non-magnetic
layer, resulting from the reference layer having a predetermined thickness, and

the other non-magnetic layer stabilizes the perpendicularity of magnetization direction of the reference layer to the reference
layer surface.

US Pat. No. 9,963,482

PHOSPHATIDYLINOSITOL-3-KINASE INHIBITOR AND PHARMACEUTICAL COMPOSITION

Tohoku University, Miyag...

2. A depsipeptide compound represented by the following formula 1:
wherein A is —CONH—, R1 is naphthyl alkyl group, and R2 and R3 may be the same or different from each other and each represents a hydrogen atom, a lower alkyl group, a lower alkylidene group, a substituted or unsubstituted aryl group, or a substituted or unsubstituted aralkyl group, wherein the lower alkyl group is a linear or branched alkyl group having 1 to 6 carbon atoms and the lower alkylidene group is a linear or branched alkylidene group having 1 to 6 carbon atoms; or a physiologically acceptable salt thereof.

US Pat. No. 9,925,668

ROBOT, CONTROL UNIT, AND CONTROL METHOD

Seiko Epson Corporation, ...

1. A robot comprising:an arm; and
a controller that operates the arm,
wherein the controller generates a pathway according to:
a relative position and a relative orientation between a first object and a second object; and
a first position of the first object, the first object being moved together with the arm,
wherein the controller generates the pathway by use of a first object movable range according to the relative position and the relative orientation, and
wherein according to the first object movable range, the controller calculates a value which represents a degree of difficulty in movement of the first object or a degree of ease in movement of the first object depending on the relative position and the relative orientation, and the controller generates the pathway by use of the value which represents the degree.

US Pat. No. 9,853,887

INFORMATION TRANSFER DEVICE, DELAY TOLERANT NETWORK, INFORMATION TRANSMISSION METHOD, AND RECORDING MEDIUM

NEC CORPORATION, Tokyo (...

1. An information transfer device, comprising:
a communication unit to communicate to and from another device within a communication range that is connected to the information
transfer device;

a storing unit to store and keep notification information that is received via the communication unit to be relayed;
a delay tolerant communication unit to exchange the notification information stored in the storing unit with another device
when the exchange becomes possible; and

a control unit to exchange environment information with another information transfer device, and to derive an assigned range
that is assigned autonomously to the information transfer device, based on the environment information that is kept by the
information transfer device, through a planarization search processing in which a value is evened out between the information
transfer device and other information transfer devices, the value being a value of equal load balancing another one of the
information transfer devices, the assigned range being one of ranges that are shared between the information transfer device
and the other information transfer devices as assigned ranges.

US Pat. No. 9,701,744

ANTI-VASOHIBIN 2 ANTIBODY

TOHOKU UNIVERSITY, Senda...

1. An anti-Vasohibin-2 antibody or a fragment thereof, which recognizes amino acid numbers 269 to 288 of the amino acid sequence
shown in SEQ ID NO: 2.

US Pat. No. 9,662,087

EVALUATION AID

National University Corpo...

1. An evaluation aid adapted to be used for taking a digital X-ray image thereof, wherein evaluation is carried out through
the digital X-ray image, the evaluation aid comprising:
a plate-like body having a quadrangular shape in a planar view and including a plurality of regions having different X-ray
absorption ratios; and

wire charts provided on the plate-like body so as to correspond to the plurality of regions, respectively, each wire chart
including a plurality of wire rods and two sheet materials between which the wire rods are fixed by being sandwiched,

wherein the plurality of wire rods included in the each wire chart are arranged to incline at an angle with respect to one
side of the plate-like body.

US Pat. No. 10,092,374

DENTAL VIBRATION APPLICATION METHOD AND DENTAL VIBRATION APPLICATION DEVICE

JM Ortho Corporation, To...

1. A vibration application method comprising steps of:contacting a contact portion with at least one of teeth or an orthodontic appliance that is attached for orthodontic treatment of the at least one of the teeth; and
vibrating the contact portion so that the contact portion displaces by no less than 0.04 ?m under a condition in which the contact portion is fixed onto the at least one of the teeth or the orthodontic appliance,
wherein vibration of the contact portion has a wave number of no less than 3600 per day,
wherein a difference between a maximum value and a minimum value of a vibrational load which is given the at least one of teeth or the orthodontic appliance is no less than 3 gf and no more than 6 gf during the vibration of the contact portion, and
wherein a combination of the wave number and the difference activates metabolism of periodontal ligament and alveolar bone to shorten a period of orthodontic treatment.

US Pat. No. 10,096,257

STORAGE MEDIUM STORING INFORMATION PROCESSING PROGRAM, INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING SYSTEM

Nintendo Co., Ltd., Kyot...

21. An information processing apparatus comprising:a touch screen including a display panel and a touch sensor;
a sound input device configured to capture sound; and
a processing system, comprising a processor and memory, the processing system configured to:
control the display panel to display a sentence including a target word that is displayed with a display mode different from a display mode of other words in the sentence;
receive sound data corresponding to sound captured by the sound input device while the sentence is displayed;
process the received sound data to determine a silent time in which sound in the received sound data is absent or below a sound threshold and a sound input time in which sound is present in the received sound data;
determine whether or not the sentence is read aloud based on the sound input time and the silent time, wherein the sentence is determined to be read aloud when a continued amount of the silent time reaches a silent threshold value after an accumulated amount of the sound input time separated by one or more silent times reaches read-aloud completion time determined based on the number of words in the displayed sentence;
upon determining that the sentence is read aloud, control the display panel to stop displaying the sentence and display an answer input screen requesting a user to manually input the target word;
receive, from the touch sensor, touch input data corresponding to input made to the answer input screen;
perform character recognition processing to determine whether the received touch input data represents characters corresponding to characters in the target word; and
upon determining that the received touch input data represents characters corresponding to characters in the target word, control the display panel to display another sentence including another target word.

US Pat. No. 10,017,840

COPPER ALLOY AND METHOD FOR MANUFACTURING THE SAME

NGK Insulators, Ltd., Na...

1. A copper alloy which contains 5.00 to 8.00 atomic percent of Zr and which includes Cu and a Cu—Zr compound,wherein two phases of the Cu and the Cu—Zr compound form a mosaic structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 ?m or less are dispersed.

US Pat. No. 9,905,752

MAGNETO-RESISTANCE ELEMENT AND MAGNETIC SENSOR USING THE SAME

DENSO CORPORATION, Kariy...

1. A magnetic sensor comprising:
a continuous pin layer that has a first surface and a second surface opposite to the first surface, a magnetized direction
of the pin layer being fixed;

a free layer disposed on a first surface side of the pin layer, the free layer including first and second free layer portions
that are separated from each other in a direction parallel to the first surface of the pin layer, and each of the first and
second free layer portions has a magnetized direction changing and following an external magnetic field; and

a nonmagnetic intermediate layer disposed between the pin layer and the first and second free layer portions, a resistance
of the nonmagnetic intermediate layer changing according to an angle between the magnetized direction of the pin layer and
the magnetized direction of each of the first and second free layer portions,

wherein:
the magnetic sensor is configured to measure an application direction of the external magnetic field based on the resistance
between the pin layer and each of the first and second free layer portions; and

at least one of the pin layer and the first and second free layer portions includes a B-containing alloy which comprises B
and at least one of Fe, Co, and Ni,

the magnetic sensor further comprising:
a trap layer that is disposed to contact with the at least one of the pin layer and the first and second free layer portions
that includes the B-containing alloy, wherein the trap layer is a member selected from the group consisting of a conductive
oxide film and a conductive nitride film configured to trap the B diffused from the pin layer or the first and second free
layer portions that includes the B-containing alloy, and each of the conductive oxide film and the conductive nitride film
contains Ta,

the trap layer is provided at least as a first trap layer and a second trap layer;
the first trap layer is disposed on the second surface of the pin layer;
the second trap layer includes first and second trap layer portions that are separated from each other in the direction parallel
to the first surface of the pin layer and are disposed on a surface of the first and second free layer portions opposite to
a surface facing the nonmagnetic intermediate layer, and

two wiring layers are disposed on and connected to the first and second trap layer portions respectively, and the two wiring
layers are separated from each other in the direction parallel to the first surface of the pin layer.

US Pat. No. 9,799,822

MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

NEC CORPORATION, Tokyo (...

1. A magnetic memory element, comprising:
a magnetization free layer formed of a ferromagnetic substance having magnetic anisotropy in a direction perpendicular to
a film surface;

a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having
magnetic anisotropy in the direction perpendicular to the film surface;

a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer
and formed of a non-magnetic substance; and

a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed
of a ferromagnetic substance having magnetic anisotropy in the direction perpendicular to the film surface,

wherein the magnetization free layer comprises a first magnetization fixed region and a second magnetization fixed region
which have magnetization fixed in directions antiparallel to each other, a magnetization free region in which a magnetization
direction is variable,

a domain wall is formed at any one of a border between the first magnetization fixed region and the magnetization free region
and a border between the second magnetization fixed region, and the magnetization free region, and

a position in plane of a whole of the response layer is located inside of a position in plane of the magnetization free layer,
and

wherein the response layer, the non-magnetic layer and the reference layer are formed so as to completely overlap the magnetization
free region in plane such that the width and depth of the magnetization free region is matched with the width and depth of
the response layer in plane,

a thickness range of the response layer is 0.9 nm to 1.3 nm,
wherein a distance from a center of the magnetization free region to a center of the response layer is 5 nm to 15 nm, and
wherein a magnetization of the response layer changes in response to a change in direction of the magnetization of the magnetization
free region.

US Pat. No. 9,777,077

RUBBER PARTICLE FRACTIONATION METHOD, TRANSPORT METHOD, AND STORAGE METHOD

SUMITOMO RUBBER INDUSTRIE...

1. A method for fractionating rubber particles in natural rubber latex by particle size, the method comprising
adding a buffer solution to natural rubber latex and centrifuging the natural rubber latex in at least four stages at forces
of 800 to 3,000×g, 6,500 to 10,000×g, 17,000 to 22,000×g, and 40,000 to 60,000×g to fractionate rubber particles,

wherein the buffer solution is added to the natural rubber latex in an amount equal to or less than an amount of the natural
rubber latex.

US Pat. No. 9,740,255

MEMORY CELL AND STORAGE DEVICE

Tohoku University, Senda...

1. A memory cell comprising:
a flip-flop comprising a first inverter and a second inverter, the first inverter comprising a first magnetic tunneling junction
element and a first field-effect transistor, the second inverter comprising a second magnetic tunneling junction element and
a second field-effect transistor, the first inverter and the second inverter being cross coupled to each other;

a power gating field-effect transistor;
a third field-effect transistor; and
a fourth field-effect transistor,
wherein:
respective pin layers of the first magnetic tunneling junction element and the second magnetic tunneling junction element
are connected to a power supply line through the power gating field-effect transistor;

a control terminal of the power gating field-effect transistor is connected to a bit select line;
an output terminal of the first inverter is a node to which a free layer of the first magnetic tunneling junction element
and a control terminal of the second field-effect transistor are connected, is grounded through the first field-effect transistor,
and is connected to a bit line through the third field-effect transistor;

an output terminal of the second inverter is a node to which a free layer of the second magnetic tunneling junction element
and a control terminal of the first field-effect transistor are connected, is grounded through the second field-effect transistor,
and is connected to an inverse bit line through the fourth field-effect transistor; and

respective control terminals of the third field-effect transistor and the fourth field-effect transistor are connected to
a word line.

US Pat. No. 9,666,325

COPPER ALLOY AND METHOD OF MANUFACTURING COPPER ALLOY

TOHOKU UNIVERSITY, Senda...

1. A copper alloy having a composition represented by the composition formula by atom %: Cu100-a-b-c(Zr, Hf)a(Cr, Ni, Mn, Ta)b(Ti, Al)c [wherein, 2.5?a?4.0, 0.1 Cr, Ni, Mn and Ta; and (Ti, Al) means one or both of Ti and Al], and having Cu primary phases in which the mean secondary
dendrite arm spacing is 2 ?m or less and eutectic matrices in which the lamellar spacing between a metastable Cu5(Zr, Hf) compound phase and a Cu phase is 0.2 ?m or less.

US Pat. No. 10,028,766

JET STREAM GENERATING DEVICE AND JET STREAM GENERATING METHOD

Tohoku University, Miyag...

1. A jet stream generating device that generates a jet stream of liquid, comprising:a cylindrical liquid chamber;
a nozzle that opens an end part of the liquid chamber and injects liquid in the liquid chamber to outside;
a liquid supply path that supplies liquid into the liquid chamber;
a laser beam irradiation part that irradiates a pulse laser beam into the liquid chamber, and vaporizes the liquid in the liquid chamber; and
a laser oscillator that controls laser beam intensity and laser beam pulse width independently, wherein
an inner surface of the liquid chamber comprises a mirror plane for reflecting and guiding the pulse laser beam emitted from the laser beam irradiation part to the end part, and
the jet stream generating device further comprises an adjuster that adjusts a distance between the nozzle and the laser beam irradiation part in accordance with the pulse width of the pulse laser beam emitted from the laser beam irradiation part.
US Pat. No. 9,963,438

METHOD FOR THE PRODUCTION OF VITAMIN E WITH A HIGH PURITY, VITAMIN E PRODUCED BY SAID METHOD, AND A COMPOSITION COMPRISING SAID VITAMIN E

TOHOKU UNIVERSITY, Miyag...

1. A method of manufacturing a high-purity vitamin E compound comprising contacting a solution comprising a vitamin E compound and a free fatty acid with a weakly basic anion exchanger having a functional group pKa of 7-9, wherein the free fatty acid is adsorbed.

US Pat. No. 9,928,906

DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT

Tohoku University, Senda...

1. A data-write device for a resistance-change memory element, whereinmemory cells are disposed in an N×M arrangement (N>1, M>1), one of the memory cells including a resistance-change memory element having two terminals and an NMOS transistor for selecting the memory element,
in each row from a first to an Nth row, an end of the memory element included in the M memory cells is connected to a first connection node in which a drain node of a first PMOS transistor and a drain node of a first NMOS transistor are connected via a NMOS transistor for selection for selecting the memory cells disposed in the N×M arrangement for each row,
in each row, from the first to the Nth row, another end, that is not connected to the memory element of the current path of the NMOS transistor included in the M memory cells, is connected to a second connection node in which a drain node of a second PMOS transistor and a drain node of a second NMOS transistor are connected, and
the NMOS transistors included in each of the memory cells are transistors for selecting the memory elements for each column,the data-write device comprising:write means that causes a current to flow through in the order of the first PMOS transistor, the NMOS transistor for selection, the memory element, the NMOS transistor included in the memory cell, and the second NMOS transistor, or in the order of the second PMOS transistor, the NMOS transistor included in the memory cell, the memory element, the NMOS transistor for selection, and the first NMOS transistor in accordance with data to be written, thereby writing the data in the memory element;
write completion detecting means that monitors a voltage at the first connection node or the second connection node in accordance with the data to be written after data writing in the memory element starts, detects a completion of the writing of the data based on the voltage at the either connection node, and supplies a write completion signal indicating the completion of writing of the data; and
write control means that causes the write means to terminate the writing of the data in the memory element in response to the write completion signal supplied from the write completion detecting means.
US Pat. No. 9,791,461

METHOD FOR TESTING FOR CARDIOVASCULAR DISEASE WITH CYCLOPHILIN A

TOHOKU UNIVERSITY, Miyag...

1. An examination kit for a cardiovascular disease, said kit comprising (i) means for measuring a concentration of cyclophilin
A protein in a human blood sample and (ii) instructions for an examination method for a cardiovascular disease, the examination
method comprising the steps of:
measuring a concentration of cyclophilin A protein in a human blood sample using said means for measuring a concentration
of cyclophilin A protein in a human blood sample; and

determining a probability of development of a cardiovascular disease based on the measured concentration of cyclophilin A
protein when the measured concentration of cyclophilin A protein is 15 ng/mL or more, wherein the cardiovascular disease comprises
at least one kind selected from the group consisting of coronary organic stenosis, aortic aneurysm, and pulmonary hypertension.

US Pat. No. 9,722,276

SOLID ELECTROLYTE, METHOD FOR PRODUCING THE SAME, AND SECONDARY BATTERY COMPRISING SOLID ELECTROLYTE

TOHOKU UNIVERSITY, Senda...

1. A solid electrolyte for a lithium ion secondary battery, consisting of:
LiBH4;

LiX1, where X1 represents a halogen atom; and

optionally, an alkali metal compound represented by the formula (1a):
MX2  (1a)

in formula (1a), M represents at least one alkali metal atom selected from the group consisting of Na, K, Rb, and Cs, and
X2 represents a halogen atom.

US Pat. No. 10,141,184

METHOD OF PRODUCING SELF-SUPPORTING NITRIDE SEMICONDUCTOR SUBSTRATE

TOHOKU UNIVERSITY, Miyag...

1. A method of producing a free-standing nitride semiconductor substrate, comprising: a first step of forming a buffer layer of a nitride semiconductor that is one of GaN, AlN, InGaN, and InN on a main surface of a single crystalline substrate;a second step of forming a crystallized layer including a plurality of growth islands each of which is a hexagonal platelet with an N-polar upper surface, by annealing the buffer layer and thereby converting the buffer layer into a single crystal;
a third step of fabricating a continuous layer including the plurality of growth islands by promoting the lateral growth of the plurality of growth islands along the main surface of the single crystalline substrate and thereby performing coalescence of the plurality of growth islands;
a fourth step of forming a boule of the nitride semiconductor on the continuous layer by performing the crystal growth of the nitride semiconductor with an N-polar upper surface on the continuous layer;
a fifth step of removing the single crystalline substrate from the boule; and
a sixth step of fabricating a plurality of free-standing nitride semiconductor substrates by cutting the boule,
wherein the single crystalline substrate is made of a single crystalline ScAlMgO4,
wherein
the nitride semiconductor is one of GaN, InGaN, and InN, and
the fourth step includes steps of (a) forming an AlN layer on the continuous layer, (b) oxidizing a surface of the AlN layer, (c) nitriding the surface of the AlN layer which has been oxidized, and (d) performing the crystal growth of the nitride semiconductor with an N-polar upper surface on the AlN layer.