1. A memristor, comprising:a support substrate, a first array of electrodes or integrated circuit located on the support substrate;
a layer of a verdazyl polymer located on said first electrode array, said layer having a thickness in a range from about 1 nm to about 1 ?m, and said verdazyl polymer having a structure (S1):
in whichB is a bridging group which is any one of C?O, C?S, CH2, and CHAr where Ar is a phenyl or substituted phenyl;
R1 and R5 are N-substituents which include any one of methyl, isopropyl, tertbutyl, phenyl, substituted phenyls, thiophene, furan, pyrrole, imidazole, pyridine, dimethylaminopyridine, pyrimidine, and indole;
PG is the polymerized form of a group, the group including any one of cis-5-norbornene-exo-2,3-dicarboximide, norbornene, substituted norbornenes, styrene, vinyl, alkynyl, acrylate, methacrylate, substituted silacyclobutanes, ethylene glycol, and ethylene oxide; and
n is an integer equal to or greater than 1;
a second array of electrodes or integrated circuit located on a top surface of the layer of a verdazyl polymer; and
one of said first and second array of electrodes or integrated circuits being a cathode, said cathode having a work function in range of about 3 to about 6 eV, and the other array of electrodes being an anode, said anode having a work function in range of about 2 to about 5 eV.