US Pat. No. 9,196,796

SEMICONDUCTOR LIGHT EMITTING DIODE HAVING OHMIC ELECTRODE STRUCTURE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

11. A method of manufacturing a semiconductor light emitting diode, the method comprising:
forming a light emitting structure comprising an upper surface comprising an N-face; and
forming an ohmic electrode structure on the N-face of the light emitting structure, the ohmic electrode structure comprising
a lower diffusion preventing layer, a contact layer, an upper diffusion preventing layer, and a protective layer,

wherein:
the lower diffusion preventing layer comprises at least one of Mo and W;
the contact layer comprises at least one of Ti, TiN, a Ti—Ni alloy, Ta, and a W—Ti alloy;
the upper diffusion preventing layer comprises a metal layer formed of at least one of W, Cr, Ru, Pt, Ni, Pd, Ir, Rh, and
Nb, or an oxide film formed of at least one of RuOx, NiOx, IrOx, RhOx, NbOx, TiOx, TaOx, CrOx, and WOx; and

the protective layer is formed of Al.

US Pat. No. 9,048,348

METHOD OF SEPARATING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of separating a substrate, comprising:
forming a first mask pattern comprising a masking region and an open region, on a substrate;
forming a sacrificial layer covering the substrate and the first mask pattern;
patterning the sacrificial layer to form a seed layer and to expose at least a portion of the first mask pattern;
forming a second mask pattern on the exposed portion of the first mask pattern;
forming an epitaxial layer on the seed layer and the second mask pattern, and forming a void between the second mask pattern
and the epitaxial layer; and

separating the substrate and the epitaxial layer.

US Pat. No. 9,293,676

LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

6. A light-emitting diode (LED) chip, comprising:
a carrier substrate;
an LED mounted on the carrier substrate, the LED comprising an N-type semiconductor layer, active layer and a P-type semiconductor
layer;

bumps disposed on the LED and electrically connected to the semiconductor layers;
an N-pad disposed between the N-type semiconductor layer and a first bump among the bumps;
a P-pad disposed between the P-type semiconductor layer and a second bump among the bumps;
an insulation layer respectively covering sides and peripheries of the N-pad and the P-pad;
an N-electrode pad disposed between the carrier substrate and the first bump; and
a P-electrode pad disposed between the carrier substrate and the second bump;
wherein:
the bumps comprise gold (Au) and each bump has the same thickness as one another;
the P-electrode pad and the N-electrode pad comprise gold (Au); and
the P-electrode pad is elongated between first and second portions of the N-electrode pad in a first direction perpendicular
to a second direction that is the cross-sectional width of the LED chip.

US Pat. No. 9,324,919

LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode package, comprising:
a mounting surface;
a light emitting diode chip arranged on the mounting surface; and
a reflecting surface to reflect at least a part of a light emitted from the light emitting diode chip,
wherein a distributed Bragg reflector comprising a reflectivity of at least 90% for light of a first wavelength in a blue
wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength
range is arranged on at least a part of the reflecting surface, and

wherein the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength range of 400 to
700 nm.

US Pat. No. 9,153,737

HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR DEVICE ON POROUS NITRIDE SEMICONDUCTOR AND MANUFACTURING METHOD THEREOF

Seoul Viosys Co., Ltd., ...

1. A method for manufacturing a semiconductor device, the method comprising:
forming a first nitride semiconductor layer on a substrate;
forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer
using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution;

forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral
crystal growth of the second nitride semiconductor layer completely fills the pores; and

forming a semiconductor device structure on the second nitride semiconductor layer,
wherein upper side surfaces of the pores in the first nitride semiconductor layer form a lateral crystal growth region for
growth of the second nitride semiconductor layer, and

wherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of
the pores.

US Pat. No. 9,289,523

UNIVERSAL UV STERILIZER

Seoul Viosys Co., Ltd., ...

1. A UV sterilizer comprising:
a body including a top surface and a sidewall;
at least one first UV LED chip disposed on the top surface of the body; and
at least one second UV LED chip disposed on the sidewall of the body,
wherein the body has cross-sectional areas gradually decreasing toward the top surface, the sidewall is inclined, and a light
emitting surface of the second UV LED chip is substantially parallel to a surface of the sidewall.

US Pat. No. 9,293,660

LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) comprising:
a substrate;
a first semiconductor layer formed over the substrate and having a first conductivity type;
an active layer formed over the first semiconductor layer and configured to generate light;
a second semiconductor layer formed over the active layer and having a second conductivity type;
a protective insulating layer formed as multiple portions over at least the second semiconductor layer with the multiple portions
spaced apart from each other; and

a reflection pattern formed between the multiple portions of the protective insulating layer, the reflection pattern configured
to reflect light generated in the active layer, the reflection pattern including a conductive barrier layer contacting the
protective insulating layer and extending over the second semiconductor layer, wherein the reflection pattern configured to
reflect light generated in the active layer comprises a reflective metal layer formed between the second semiconductor layer
and the conductive layer, wherein the conductive barrier layer contacts at least side surfaces of the reflective metal layer.

US Pat. No. 9,099,609

METHOD OF FORMING A NON-POLAR/SEMI-POLAR SEMICONDUCTOR TEMPLATE LAYER ON UNEVENLY PATTERNED SUBSTRATE

Seoul Viosys Co., Ltd, A...

1. A method for manufacturing a semiconductor device, the method comprising:
etching a sapphire substrate to form uneven patterns thereon, the sapphire substrate comprising an A-plane or M-plane crystal
plane; and

forming a template layer on the etched sapphire substrate,
wherein forming the template layer comprises:
forming a low-temperature nitride semiconductor layer at a temperature in the range of 400 to 700° C.;
forming a high-temperature nitride semiconductor layer at a temperature in the range of 700 to 1100° C.; and
forming an undoped GaN layer at a temperature in the range of 800 to 1100° C., and
wherein the low-temperature nitride semiconductor layer of the template layer contacts the sapphire substrate.

US Pat. No. 9,379,282

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose
a surface of the substrate, each of the first and second light emitting cells comprising a stack structure comprising:

a lower semiconductor layer;
an upper semiconductor layer disposed on the lower semiconductor layer; and
an active layer interposed between the lower semiconductor layer and the upper semiconductor layer,
a first transparent layer disposed on the first light emitting cell, the first transparent electrode layer being electrically
connected to the first light emitting cell;

a first connection section disposed on a first portion of the first light emitting cell and a second connection section disposed
on a first portion of the second light emitting cell;

a first interconnection electrically connecting the first light emitting cell and the second light emitting cell;
a second interconnection electrically connecting the first light emitting cell and the second light emitting cell; and
an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting
cell.

US Pat. No. 9,450,153

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A method of manufacturing a light emitting diode, comprising:
forming a seed layer on a nitride light emitting structure;
forming a mask pattern on the seed layer;
forming a plurality of protrusions by re-growing the seed layer,
wherein the plurality of protrusions each have a lower portion and an upper portion, and
a side of the lower portion and a side of the upper portion have different gradients.

US Pat. No. 9,373,496

SUBSTRATE RECYCLING METHOD AND RECYCLED SUBSTRATE

Seoul Viosys Co., Ltd., ...

1. A substrate recycling method, the method comprising:
separating a substrate comprising a first surface from an epitaxial layer;
performing a first etching of the first surface using electrochemical etching; and
performing, after the first etching, a second etching of the first surface using chemical etching or dry etching, or performing,
after the first etching, chemical mechanical polishing of the first surface,

wherein:
the first surface comprises a sacrificial layer; and
the substrate further comprises an etching stop layer disposed under the sacrificial layer.

US Pat. No. 9,287,462

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the
second light emitting cell being spaced apart from each other;

a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected
to the first light emitting cell;

a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer;
an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and
an insulation layer disposed between the interconnection and a side surface of the first light emitting cell,
wherein the current blocking layer and a first side of the insulation layer are connected to each other.

US Pat. No. 9,445,462

LIGHT EMITTING DEVICE FOR AC POWER OPERATION

SEOUL VIOSYS CO., LTD., ...

1. A light-emitting device, comprising:
a first terminal;
a second terminal;
a first array of light emitting cells electrically connected in series and disposed between the first terminal and the second
terminal; and

a second array of light emitting cells electrically connected in series and disposed between the first terminal and the second
terminal;

wherein a number of the light emitting cells of the first array is different from a number of the light emitting cells of
the second array, and

wherein the first array and the second array are configured to emit light while maintaining a substantially constant current
level flowing through the light emitting cells in response to a varying voltage level received through at least one of the
first terminal or the second terminal.

US Pat. No. 9,368,548

AC LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light-emitting device, comprising:
a substrate;
bonding pads disposed over the substrate;
arrays of light-emitting cells disposed over the substrate and between the bonding pads, the arrays of light-emitting cells
including a first array of light-emitting cells and a second array of light-emitting cells; and

electrical connectors to electrically connect in series the light-emitting cells of the first array and the second array,
wherein the first array of serially connected light-emitting cells is electrically connected in parallel to the second array
of serially connected light-emitting cells, and

wherein the electrical connectors serially connecting the light-emitting cells of the first array are arranged in a pattern
similar to the electrical connectors serially connecting the light-emitting cells of the second array and wherein the bonding
pads are disposed on opposing sides of the first and second arrays of serially connected light-emitting cells and each bonding
pad is dimensioned to extend on one side of the first and second arrays of serially connected light-emitting cells to electrically
connect end light-emitting cells of both the first and second arrays of serially connected light-emitting cells.

US Pat. No. 9,356,212

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a first light emitting cell comprising:
a first shared first semiconductor layer having a first conductivity type disposed on a substrate;
a first separate second semiconductor layer having a second conductivity type different from the first conductivity type;
a first separate active layer disposed between the first shared first semiconductor layer and the first separate second semiconductor
layer;

a first shared transparent electrode layer disposed on the first separate second semiconductor layer;
a second light emitting cell comprising:
the first shared first semiconductor layer having the first conductivity type;
a second separate second semiconductor layer having the second conductivity type;
a second separate active layer disposed between the first shared first semiconductor layer and the second separate second
semiconductor layer;

the first shared transparent electrode layer disposed on the second separate second semiconductor layer;
a third light emitting cell comprising:
a second shared first semiconductor layer having the first conductivity type disposed on the substrate;
a third separate second semiconductor layer having the second conductivity type;
a third separate active layer disposed between the second shared first semiconductor layer and the third separate second semiconductor
layer;

a first separate transparent electrode layer disposed on the third separate second semiconductor layer;
a fourth light emitting cell comprising:
the second shared first semiconductor layer having the first conductivity type;
a fourth separate second semiconductor layer having the second conductivity type;
a fourth separate active layer disposed between the second shared first semiconductor layer and the fourth separate second
semiconductor layer;

a second separate transparent electrode layer disposed on the fourth separate second semiconductor layer;
wherein:
the first and second light emitting cells are disposed adjacent to one another;
the third and fourth light emitting cells are adjacent to one another;
a first interconnection connects the first shared first semiconductor layer of the first and second light emitting cells to
the first separate transparent electrode layer of the third light emitting cell; and

a second interconnection connects the first shared first semiconductor layer of the first and second light emitting cells
to the second separate transparent electrode layer of the fourth light emitting cell.

US Pat. No. 9,324,921

LIGHT-EMITTING DIODE PACKAGE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode package comprising:
a growth substrate;
a passivation layer disposed on one surface of the growth substrate; and
a package substrate comprising a body section and a wall section disposed on the body section, the wall section comprising
a first end extending from the body section and a second end connected to the passivation layer,

wherein at least a space between the body section, the wall section and the passivation layer is sealed from outside, and
wherein the body section of the package substrate is integrally formed with the wall section thereof.

US Pat. No. 9,318,529

WAFER LEVEL LIGHT-EMITTING DIODE ARRAY

Seoul Viosys Co., Ltd., ...

17. A light emitting diode array, comprising:
a substrate;
light emitting units respectively disposed in a first region and a second region, each light emitting unit including a first
semiconductor layer, an active layer, and a second semiconductor layer, wherein the light emitting units in the first and
second regions are disposed to form first via structures to expose a portion of the corresponding first semiconductor layers;

lower electrodes disposed over the light emitting units in the first region and the second region except the exposed portion
of the first semiconductor layer;

interlayer insulation layers disposed over the lower electrodes to form second via structures to expose a portion of the exposed
portion of the first semiconductor layer, wherein the interlayer insulating layers are further disposed to expose a portion
of the lower electrodes; and

upper electrodes disposed over the interlayer insulation layers, wherein one of the upper electrodes is disposed in the first
region to electrically connect the first semiconductor layer of the corresponding light emitting unit in the first region
to the second semiconductor layer of the corresponding light emitting unit in the second region, wherein the first via structure
of a given light emitting unit includes a pair of via holes disposed near edges of the given light emitting unit and a connection
part connecting the pair of via holes, and one of the pair of via holes is spaced apart by a predetermined distance from at
least one of the second via structures.

US Pat. No. 9,312,447

NEAR UV LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
an n-type contact layer comprising an AlGaN layer or AlInGaN layer;
a p-type contact layer comprising an AlGaN layer or AlInGaN layer;
an active area disposed between the n-type contact layer and the p-type contact layer,
and having a multi-quantum well structure;
at least one electron control layer disposed between the n-type contact layer and the active area;
a super-lattice layer disposed between the n-type contact layer and the active area; and
an electron implantation layer disposed between the super-lattice layer and the active area,
wherein the electron implantation layer has a higher n-type impurity doping concentration than the super-lattice layer,
wherein the first barrier layer contacts the electron implantation layer,
wherein the active area comprises barrier layers and well layers, the barrier layers being formed of AlInGaN or AlGaN and
comprising a first barrier layer that is disposed closer to the n-type contact layer than any other barrier layer and that
comprises a higher percentage of Al than any other barrier layer, and

wherein the electron control layer is formed of AlInGaN or AlGaN and contains a higher percentage of Al than adjacent layers,
such that the electron control layer is configured to obstruct the movements of electrons into the active area.

US Pat. No. 9,306,120

HIGH EFFICIENCY LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode, comprising:
a second conductivity-type semiconductor layer disposed on a support substrate;
a first conductivity-type semiconductor layer disposed on the second conductivity-type semiconductor layer;
an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor
layer;

a passivation layer disposed on the first conductivity-type semiconductor layer, the second conductivity-type semiconductor,
and the active layer;

an insulating pattern layer disposed on a first region of the support substrate; and
an electrode pad disposed on the first conductivity-type semiconductor layer,
wherein:
the first conductivity-type semiconductor layer comprises a plurality of recesses spaced apart from each other and a sub-micro
texture disposed on an uppermost surface of the first conductivity-type semiconductor layer opposite to the support substrate
excluding the plurality of recesses;

the passivation layer is disposed in the plurality of recesses and on the sub-micro texture of the first conductivity-type
semiconductor layer;

the electrode pad is disposed on a portion of the sub-micro texture and at least one of the plurality of recesses of the first
conductivity-type semiconductor layer.

US Pat. No. 9,263,658

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting device, comprising:
a base;
a lighting element disposed on the base, the lighting element comprising an epitaxial layer and a substrate disposed on the
epitaxial layer;

a contact member disposed between the lighting element and the base, the contact member electrically connecting the lighting
element and the base; and

a lens disposed on the substrate,
wherein the base comprises a frame portion and a submount,
wherein the lighting element is disposed on the submount and the submount is disposed on the frame portion, and
wherein the lens is a dotted lens.

US Pat. No. 9,202,685

METHOD OF MANUFACTURING A COMPOUND SEMICONDUCTOR SUBSTRATE IN A FLATTENED GROWTH SUBSTRATE

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a semiconductor substrate, the method comprising:
growing a first compound semiconductor layer on a first surface of a substrate;
etching the first compound semiconductor layer using HF, KOH, or NaOH to make a first surface of the first compound semiconductor
layer irregular;

forming cavities in the first compound semiconductor layer;
separating the first compound semiconductor layer from the first surface of the substrate;
flattening the first surface of the substrate after separating the first compound semiconductor layer; and
growing a second compound semiconductor layer on the flattened first surface of the substrate,
wherein:
forming the cavities comprises removing a patterned layer disposed on the first compound semiconductor layer; and
the patterned layer comprises an oxide region.

US Pat. No. 9,093,595

PHOTO DETECTION DEVICE

Seoul Viosys Co., Ltd., ...

1. A photo detection device, comprising:
a substrate;
a band-pass filter layer disposed on the substrate;
a light absorption layer disposed on the band-pass filter layer;
a Schottky layer disposed on a portion of the light absorption layer;
a first electrode layer disposed on a portion of the Schottky layer; and
a second electrode layer disposed on the light absorption layer and spaced apart from the Schottky layer.

US Pat. No. 9,362,458

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a gallium nitride-based compound semiconductor layer;
a first metal layer disposed in the form of islands comprising Mg that are in ohmic contact with the gallium nitride-based
compound semiconductor layer;

a second metal layer comprising Ni, covering the first metal layer, and contacting the gallium nitride-based compound semiconductor
layer between the islands of the first metal layer; and

a reflective metal layer covering the second metal layer.

US Pat. No. 9,059,359

PHOTO DETECTION DEVICE, PHOTO DETECTION PACKAGE INCLUDING THE PHOTO DETECTION DEVICE, AND PORTABLE DEVICE INCLUDING THE PHOTO DETECTION PACKAGE

Seoul Viosys Co., Ltd., ...

1. A photo detection device, comprising:
a substrate;
a first light absorption layer disposed on the substrate;
a second light absorption layer disposed in a first region on the first light absorption layer;
a first electrode layer disposed on each of the first and the second light absorption layers; and
a second electrode layer disposed on the first light absorption layer and spaced apart from the first electrode layer, or
disposed on a second surface of the substrate so that the first and second light absorption layers are disposed on a first
surface of the substrate opposite to the second surface.

US Pat. No. 9,252,326

LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
at least three pairs of half-wave light emitting units, each pair comprising a terminal of a first half-wave light emitting
unit connected to a terminal of a second half-wave light emitting unit, the terminals comprising the same polarity, a polarity
of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals
of an adjacent half-wave light emitting unit pair;

at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units; and
a node connected to the at least two full-wave light emitting units and a first pair of half-wave light emitting units of
the at least three pairs of half-wave light emitting units,

wherein:
the half-wave light emitting units and the full-wave light emitting units each comprise at least one light emitting cell;
the half-wave light emitting units each comprise a first terminal and a second terminal;
the full-wave light emitting units each comprise a third terminal comprising the same polarity as the first terminal and a
fourth terminal comprising the same polarity as the second terminal;

the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light
emitting units and the fourth terminal of each full-wave light emitting unit being connected to the first terminal of adjacent
half-wave light emitting units;

the two full-wave light emitting units are disposed on opposite sides of the node; and
each half-wave light emitting unit of the first pair of half-wave light emitting units is disposed on an opposite side of
the node.

US Pat. No. 9,343,627

ELECTRONIC DEVICE COMPRISING SEMICONDUCTOR MEMORY HAVING OHMIC-CONTACT STRUCTURE SEPARATED FROM CURRENT DISTRIBUTING LAYER

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising: a first conductivity type semiconductor layer; a plurality of mesas disposed over the
first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer;
a first ohmic-contact structure in contact with the first conductivity type semiconductor layer; a plurality of second ohmic-contact
structures in contact with the second conductivity type semiconductor layer of the mesa; a lower insulating layer covering
the mesa and the first conductivity type semiconductor layer, the lower insulating layer having a first opening part exposing
the first ohmic-contact structure and a second opening part exposing the second ohmic-contact structure; a current distributing
layer electrically connected to the first ohmic-contact structure exposed by the first opening part of the lower insulating
layer, the current distributing layer having a third opening part exposing the second opening part; and a diffusion preventing
reinforced layer disposed in the third opening part of the current distributing layer and connected to the second ohmic-contact
structure exposed by the second opening part, wherein the diffusion preventing reinforced layer electrically connects the
plurality of second ohmic-contact structures to each other, wherein the light emitting diode further comprises an upper insulating
layer covering the current distributing layer, wherein the upper insulating layer is disposed to form a fourth opening part
defining a first electrode pad region by exposing the current distributing layer and a fifth opening part defining a second
electrode pad region by exposing an upper region of the diffusion preventing reinforced layer, and wherein the current distributing
layer and the diffusion preventing reinforced layer have the same structure and include a metal reflective layer.

US Pat. No. 9,343,631

LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range,
comprising:
a substrate;
a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure comprising an active
layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and
configured to emit light of the first wavelength range;

first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate; and
a phosphor disposed on the light-emitting structure,
wherein:
the first DBR is disposed closer to the substrate than the second DBR;
the first wavelength range comprises a blue wavelength range;
light of the second wavelength range is converted by the phosphor;
the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength
range; and

the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength
range.

US Pat. No. 9,287,367

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

5. A semiconductor device comprising:
a first conductive type semiconductor layer comprising a first lower conductive type semiconductor layer and a first upper
conductive type semiconductor layer;

V-pits passing through at least one portion of the first upper conductive type semiconductor layer;
a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pits; and
an active layer interposed between the first and second conductive type semiconductor layers, the V-pits passing through the
active layer,

wherein the first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type
semiconductor layer and comprises a V-pit generation layer comprising starting points of the V-pits,

wherein the V-pit generation layer includes indium (In), and
wherein the V-pit generation layer includes an AlInGaN based nitride semiconductor layer and an AlGaN based nitride semiconductor
layer that are alternately stacked.

US Pat. No. 9,111,840

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A semiconductor device, comprising:
a gallium nitride substrate;
a plurality of semiconductor stacks disposed on the gallium nitride substrate;
an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation
pattern insulating the semiconductor stacks from the gallium nitride substrate, wherein the insulation pattern comprises a
mask region and an open region, the plurality of semiconductor stacks being disposed in the mask region;

a plurality of interconnection wires electrically connecting semiconductor stacks of the plurality of semiconductor stacks
to each other, respectively; and

an insulation layer disposed on the open region of the insulation pattern between the gallium nitride substrate and the interconnection
wires, and further disposed on side surfaces of the semiconductor stacks between the semiconductor stacks and the interconnection
wires.

US Pat. No. 9,812,616

LIGHT-EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a substrate;
a light emitting cell disposed on the substrate and comprising a lower semiconductor layer, an upper semiconductor layer disposed
in one region of the lower semiconductor layer, and an active layer interposed between the lower semiconductor layer and the
upper semiconductor layer

a first electrode disposed on the upper semiconductor layer;
a second electrode disposed on the lower semiconductor layer;
a first insulation layer comprising a first open region partially exposing the first electrode;
a second insulation layer disposed on the first insulation layer; and
a first bump forming ohmic contact with the first electrode through the first open region,
wherein the first bump comprises a first concave portion and a first convex portion that are formed on an upper surface of
the first bump;

wherein the first bump comprises a first region having a top surface including a bottom surface of the first concave portion
and a second region having a top surface including an upper surface of the first convex portion; and

wherein at least part of the first region is disposed on the first open region and at least part of the second region is disposed
on the second insulation layer.

US Pat. No. 9,395,095

AIR PURIFYING APPARATUS HAVING SHUNTABLE AIR DUCT

SEOUL VIOSYS CO., LTD., ...

1. An air purifying apparatus comprising:
a body having an inlet chamber and an outlet chamber, said body having first and second conduits through which air flows from
air inlets to air outlets;

an ultraviolet light emitting diode part and a first filter part disposed within the first conduit; and
a second filter part disposed within the second conduit;
wherein the inlet chamber comprises a series of inlet slots functioning as the air inlets and the outlet chamber comprises
a series of outlet slots functioning as the air outlets; and

an axial fan blowing air axially from the inlet slots towards both the first conduit and the second conduit;
wherein the first conduit comprises a first opening and closing device and the second conduit comprises a second opening and
closing device;

wherein the outlet chamber comprises a fixed partition wall keeping air flowing through the first conduit completely separate
from air flowing through the second conduit such that air flowing through the first conduit and air flowing through the second
conduit do not mix until the air is discharged from the outlet slots; and

wherein when the first opening and closing device and the second opening and closing device are both open, air flowing through
the first conduit mixes with air flowing through the second conduit after the air is discharged through the outlet slots.

US Pat. No. 9,356,167

SEMICONDUCTOR ULTRAVIOLET (UV) PHOTO-DETECTING DEVICE

Seoul Viosys Co., Ltd., ...

1. An ultraviolet (UV) photo-detecting device, comprising:
a first nitride layer;
a secondary light absorption layer disposed on the first nitride layer;
a primary light absorption layer disposed on the secondary light absorption layer; and
a Schottky junction layer disposed on the primary light absorption layer,
wherein the secondary light absorption layer comprises a nitride layer having lower band-gap energy than the primary light
absorption layer.

US Pat. No. 9,299,779

SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a semiconductor substrate, the
method comprising:
forming a plurality of semispherical protrusions at an interval on a first plane of a substrate;
forming a first semiconductor layer on the first plane of the substrate;
forming a metallic material layer comprising a pattern of shapes on a first surface of the first semiconductor layer opposite
to the first plane of the substrate; and

forming a second semiconductor layer on the first surface of the first semiconductor layer using metal organic chemical vapor
deposition to form cavities in portions of the first semiconductor layer adjoining the metallic material layer.

US Pat. No. 9,252,012

METHOD OF FABRICATING A NITRIDE SUBSTRATE

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a nitride substrate, comprising:
preparing a growth substrate;
forming a sacrificial layer on the growth substrate, the sacrificial layer comprising:
a nitride horizontal etching layer comprising an indium-based nitride; and
an upper nitride sacrificial layer disposed on the nitride horizontal etching layer;
horizontally etching the nitride horizontal etching layer;
forming at least one etching hole at least partially through the upper nitride sacrificial layer such that the at least one
etching hole expands in the nitride horizontal etching layer in a horizontal direction during horizontal etching of the nitride
horizontal etching layer;

forming a nitride epitaxial layer on the upper nitride sacrificial layer by hydride vapor phase epitaxy (HVPE); and
separating the nitride epitaxial layer from the growth substrate at the nitride horizontal etching layer.

US Pat. No. 9,236,532

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode, comprising:
a first group comprising first light emitting cells connected in parallel to each other;
a second group comprising second light emitting cells connected in parallel to each other;
a first common electrode line disposed between the first light emitting cells;
two second electrode lines respectively disposed on and extending across each of the second light emitting cells;
an interconnecting section electrically connecting the first common electrode line and the two second electrode lines; and
another two second electrode lines disposed on the first light emitting cells,
wherein each first light emitting cell and second light emitting cell comprises a semiconductor stack comprising a first conductivity-type
semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type
semiconductor layer and the second conductivity-type semiconductor layer,

wherein the first common electrode line is connected to the first conductivity-type semiconductor layer of each of the first
light emitting cells,

wherein at least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor
layer,

wherein at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor
layer, and

wherein the first group is electrically connected in series to the second group by the interconnecting section.

US Pat. No. 9,164,489

WATCH WITH COUNTERFEIT DETECTION FUNCTION

SEOUL VIOSYS CO., LTD., ...

1. A watch with a counterfeit detection function, comprising:
a display panel configured to display time information;
a first UV LED unit arranged at an edge part of the display panel and configured to provide UV light away from the display
panel and towards outside of the watch which reacts with a fluorescent material embedded in a pattern in an object to cause
the fluorescent material to emit fluorescent light as an indication of the object being authentic in counterfeit detection;

a transparent cover positioned over the display panel so as to transmit and focus the UV light;
a second UV LED unit oriented to provide illumination towards the display panel; and
a controller in communication with the first UV LED unit and the second UV LED unit, the controller configured to control
the first UV LED unit separately from the second UV LED unit to provide the counterfeit detection and the illumination separate
from each other.

US Pat. No. 9,159,870

METHOD OF FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising:
growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise
a semiconductor stack and have a dislocation density of about 5×106/cm2 or less;

separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease
a thickness of the GaN substrate; and

removing a second portion of the GaN substrate remaining on the semiconductor stack using a laser lift-off.

US Pat. No. 9,142,715

LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a substrate;
a first nitride semiconductor layer arranged on the substrate;
an active layer arranged on the first nitride semiconductor layer;
a second nitride semiconductor layer arranged on the active layer;
a third nitride semiconductor layer disposed between the first nitride semiconductor layer and the active layer or between
the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality
of scatter elements within the third nitride semiconductor layer; and

a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and
the third nitride semiconductor layer,

wherein:
the scatter elements comprise air gaps surrounded on four sides by the third nitride semiconductor layer; and
the air gaps are disposed in a range of 100 nm to 1000 nm from the active layer.

US Pat. No. 9,478,690

SEMICONDUCTOR PHOTO-DETECTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A photo-detecting device, comprising:
a first nitride layer;
a light absorption layer disposed on the first nitride layer; and
a Schottky junction layer disposed on the light absorption layer,
wherein, according to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity
is greater than a second peak light intensity, and

wherein the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the
second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

US Pat. No. 9,397,264

LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) comprising:
a substrate having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second
edge, and a fourth edge opposite to the third edge;

a semiconductor stack disposed over a first surface of the substrate, the semiconductor stack comprising:
a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed
between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode pad electrically connected to the first conductivity-type semiconductor layer and disposed over the second
conductivity-type semiconductor layer and on at least a portion of the first edge of the substrate;

a first electrode extension extending from the first electrode pad along at least a portion of the first edge and at least
a portion of the third edge, the first electrode extension electrically connected to the first conductivity-type semiconductor
layer;

a second electrode pad electrically connected to the second conductivity-type semiconductor layer, wherein the second electrode
pad is disposed over the second conductively-type semiconductor layer and on at least a portion of the second edge of the
substrate;

a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer;
a second insulation functional layer interposed between the second electrode pad and the second conductivity type semiconductor
layer; and

a transparent conductive layer disposed over the second conductivity-type semiconductor layer and between the second electrode
extension and the second conductivity type semiconductor layer, wherein the transparent conductive layer is separated from
the first insulation layer.

US Pat. No. 9,392,804

MULTI-PURPOSE CONSERVATION APPARATUS

SEOUL VIOSYS CO., LTD., ...

1. A multi-purpose conservation apparatus comprising:
a storage case comprising an inner case having an accommodating unit formed in the inner case and including an open surface,
and an outer case spaced apart from an outer circumferential surface of the inner case and surrounding the outer circumferential
surface of the inner case;

a light source module disposed in the storage case and comprising a photocatalyst layer and configured to selectively remove
a gas harmful to an article stored in the storage case and at least one light emitting diode configured to radiate light to
a surface of the photocatalyst layer to activate the photocatalyst layer; and

a control unit communicatively linked with the light source module and configured to control intensity of radiation of the
light source module based at least partly on internal environmental data of the storage case,

wherein the light emitting diode is disposed in a space section between the inner case and the outer case,
the photocatalyst layer is coated on at least one of an inner circumferential surface of the inner case,
the inner case includes a material that allows light from the light emitting diode to pass through the inner case, and
the accommodating unit and the space section are separated by the inner case so that the accommodating unit stores a product
including a fluid.

US Pat. No. 9,362,449

HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode, comprising:
a support substrate;
a semiconductor stacked structure disposed on the support substrate, comprising:
a gallium nitride-based p-type semiconductor layer having a dislocation density of 5×106/cm2 or less,

a gallium nitride-based active layer having a dislocation density of 5×106/cm2 or less, and

a gallium nitride-based n-type semiconductor layer having a dislocation density of 5×106/cm2 or less; and

a reflecting layer disposed between the support substrate ark :he semiconductor stacked structure,
wherein
the semiconductor stacked structure comprises a plurality of protrusions having a truncated cone shape and fine cones formed
on top surfaces of the protrusions, and

a droop of the light emitting diode is less than 20% at 350 mA.

US Pat. No. 9,318,530

WAFER LEVEL LIGHT-EMITTING DIODE ARRAY AND METHOD FOR MANUFACTURING SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode array, comprising:
a growth substrate;
a plurality of light emitting diodes arranged on the substrate, each of the plurality of light emitting diodes having a first
semiconductor layer, an active layer and a second semiconductor layer; and

a plurality of upper electrodes arranged on the plurality of light emitting diodes and formed of an identical material, each
of the plurality of upper electrodes being electrically connected to the first semiconductor layer of a respective one of
the light emitting diodes,

wherein at least one of the upper electrodes is electrically connected to the second semiconductor layer of an adjacent one
of the light emitting diodes, and another of the upper electrodes is insulated from the second semiconductor layer of an adjacent
one of the light emitting diodes,

wherein each of the light emitting diodes has a via hole for causing the first semiconductor layer to be exposed through the
second semiconductor layer and the active layer, and

wherein each of the upper electrodes is connected to the first semiconductor layer of a respective one of the light emitting
diodes through the via hole.

US Pat. No. 9,281,446

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a GaN substrate having a plurality of through-holes;
a GaN-based semiconductor stack structure placed on the substrate, and including a first conductive-type semiconductor layer,
a second conductive-type semiconductor layer, and an active layer interposed between the first conductive-type semiconductor
layer and the second conductive-type semiconductor layer, the first conductive-type semiconductor layer being disposed closer
to the GAN substrate than the second conductive-type semiconductor layer;

a first electrode electrically connected to the first conductive-type semiconductor layer via the through-holes; and
a reflector interposed between the first electrode and the GaN substrate.

US Pat. No. 9,263,255

METHOD FOR SEPARATING EPITAXIAL LAYERS FROM GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME

SEOUL VIOSYS CO., LTD., ...

1. A method of separating a growth substrate from an epitaxial layer, comprising:
preparing a growth substrate;
forming a convex-concave pattern comprising a plurality of convex portions and concave portions on one surface of the growth
substrate;

epitaxially growing a sacrificial layer on the convex portions of the convex-concave pattern;
forming a plurality of fine pores by performing electro chemical etching (ECE) on the sacrificial layer;
epitaxially growing a plurality of semiconductor layers on the sacrificial layer;
attaching a support substrate to the semiconductor layers; and
separating the growth substrate,
wherein a plurality of voids are formed by merging or growing the fine pores within the sacrificial layer after the semiconductor
layers are epitaxially grown on the sacrificial layer.

US Pat. No. 9,082,933

LIGHT EMITTING DIODE ASSEMBLY AND METHOD FOR FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) assembly, comprising:
an LED comprising an N-type semiconductor layer and a P-type semiconductor layer;
bumps disposed on the LED and electrically connected to the semiconductor layers;
electrode pads electrically connected to the semiconductor layers;
an N-pad disposed between the N-type semiconductor layer and a first bump among the bumps; and
a P-pad disposed between the P-type semiconductor layer and a second bump among the bumps,
wherein the bumps comprise a first region comprising gold (Au) and tin (Sn), a second region comprising gold, and a third
region disposed between the first region and the second region, the third region comprising a diffusion barrier layer comprising
nickel (Ni), and

wherein the first region contacts an electrode pad among the electrode pads, and the second region is disposed between the
first region and a semiconductor layer among the semiconductor layers.

US Pat. No. 9,076,896

METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

9. A method of fabricating a semiconductor device by forming a nonpolar gallium nitride layer using metal organic chemical
vapor deposition, the method comprising:
disposing a gallium nitride substrate with an m-plane growth surface within a chamber;
raising a substrate temperature to a GaN growth temperature by heating the substrate; and
growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient
gas into the chamber at the growth temperature,

wherein the supplied ambient gas contains N2 and does not contain H2.

US Pat. No. 9,461,091

LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a substrate;
a first array comprising:
a first light emitting cell, a second light emitting cell, and a third light emitting cell; and
a first portion and a second portion;
a second array comprising:
a fifth light emitting cell, a sixth light emitting cell, and a seventh light emitting cell; and
a third portion and a fourth portion;
a first connector serially connecting the first light emitting cell and the second light emitting cell;
a second connector serially connecting the second light emitting cell and the third light emitting cell;
a fourth connector serially connecting the fifth light emitting cell and the sixth light emitting cell; and
a fifth connector serially connecting the sixth light emitting cell and the seventh light emitting cell,
wherein the first, second, and third light emitting cells are disposed along a first imaginary line separating the first and
second portions of the first array, the first and second portions of the first array extending parallel to, and on opposite
sides of, the imaginary line,

wherein the first and second connectors are disposed on the first portion and second portion of the first array, respectively,
wherein the fifth, sixth, and seventh light emitting cells are disposed along a second imaginary line, and the second imaginary
line is disposed between the third and the fourth portions of the second array,

wherein the fourth and fifth connectors are disposed on the fourth portion and third portion of the second array, respectively,
and

wherein a distance between the fourth and first connectors is greater than a distance between the second and fifth connectors.

US Pat. No. 9,461,212

LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) comprising:
a first conductive type semiconductor layer;
an active layer positioned over the first conductive type semiconductor layer;
a second conductive type semiconductor layer positioned over the active layer; and
a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor
layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer,

wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive
type semiconductor layer, and

wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of
the area of the opening region to the area of the masking region in the first region is different from a ratio of the area
of the opening region to the area of the masking region in the second region,

wherein the defect blocking layer comprises at least one insulating layer.

US Pat. No. 9,356,198

LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a light emitting structure;
a substrate disposed on the light emitting structure; and
an anti-reflection layer covering side surfaces of the light emitting structure and the substrate,
wherein:
at least a portion of an upper surface of the substrate is exposed;
the substrate comprises an inclined chamfered surface formed at an upper corner thereof, and the anti-reflection layer covers
the chamfered surface; and

an upper surface of the substrate comprises a convex-concave pattern having protrusions and depressions, the anti-reflection
layer fills the depressions of the convex-concave pattern, and the upper surface of the substrate is partially exposed by
the protrusions of the convex-concave pattern.

US Pat. No. 9,412,922

WAFER LEVEL LIGHT-EMITTING DIODE ARRAY

SEOUL VIOSYS CO., LTD., ...

27. A light emitting diode array, comprising:
a substrate;
a plurality of light emitting diodes arranged over the substrate, each of the plurality of light emitting diodes including
a first semiconductor layer, an active layer and a second semiconductor layer;

a plurality of lower electrodes arranged over the second semiconductor layers of the light emitting diodes;
a plurality of upper electrodes arranged over the plurality of light emitting diodes, each of the plurality of upper electrodes
being electrically connected to the first semiconductor layer of a respective one of the light emitting diodes; and

first and second pads arranged over the upper electrodes,
wherein at least one of the upper electrodes electrically connected to a given one of the light emitting diodes is electrically
connected to the second semiconductor layer of another light emitting diode adjacent to the given light emitting diode through
an exposed portion of the lower electrode of another light emitting diode,

wherein the light emitting diodes are electrically connected in series by the upper electrodes, and wherein the sides surfaces
of the lower electrodes have an inclination angle of 10 to 45 degrees with respect to a surface of the second semiconductor
layer.

US Pat. No. 9,356,187

METHOD FOR SEPARATING SEMICONDUCTOR DEVICES USING NANOPOROUS STRUCTURE

Seoul Viosys Co., Ltd., ...

1. A method for separating semiconductor devices from a substrate using a nanoporous structure, the method comprising:
forming a first conductivity-type nitride layer on a substrate;
forming a dielectric layer on the first conductivity-type nitride layer;
forming a nanoporous structure in the first conductivity-type nitride layer using electrolytic etching;
forming a second first conductivity-type nitride layer on the first conductivity-type nitride layer and the dielectric layer;
forming a multi-quantum well structure and a second conductivity-type nitride layer on the second first conductivity-type
nitride layer;

bonding the multi-quantum well structure and the second conductivity-type nitride layer to a conductive substrate; and
separating the second first conductivity-type nitride layer from the substrate by selectively etching the dielectric layer
using HF.

US Pat. No. 9,356,191

EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

Seoul Viosys Co., Ltd., ...

1. An epitaxial wafer, comprising:
a growth substrate;
a mask pattern disposed on the growth substrate and comprising a masking region and an opening region; and
an epitaxial layer covering the mask pattern and comprising a first void disposed on the masking region,
wherein the first void comprises:
a lower void disposed between a lower surface of the epitaxial layer and the masking region; and
an upper void extending from the lower void into the epitaxial layer,
wherein the lower void has a greater width than the upper void.

US Pat. No. 9,269,871

LIGHT EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED), comprising:
a light emitting stacked structure comprising a first contact layer and a mesa structure positioned over at least a portion
of the first contact layer;

a first electrode structure positioned over the first contact layer and including a first electrode pad and an extension portion
extending from the first electrode pad; and

a second electrode structure positioned over the mesa structure,
wherein the first electrode structure comprises a pad type current shielding layer formed under the first electrode pad and
a dot-pattern current shielding layer formed under the extension portion of the first electrode structure, and

the extension portion includes another portion that is in contact with the first contact layer.

US Pat. No. 9,136,427

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
an n-type contact layer doped with silicon;
a p-type contact layer;
an active region disposed between the n-type contact layer and the p-type contact layer, the active region comprising a barrier
layer and a well layer;

a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer comprising a
plurality of layers;

an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer; and
an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer,
wherein:
only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration
of the final layer is higher than that of the n-type contact layer; and

the superlattice layer comprises a (Al, In, Ga) N-based group III-nitride semiconductor layer having a smaller bandgap than
that of the barrier layer and a larger bandgap than that of the well layer.

US Pat. No. 9,812,602

LIGHT DETECTION DEVICE

Seoul Viosys Co., Ltd., ...

1. A light detection device comprising:
a substrate;
a buffer layer disposed over the substrate;
a first band gap change layer disposed over a portion of the buffer layer;
a light absorption layer disposed over the first band gap change layer;
a Schottky layer disposed over a portion of the light absorption layer; and
a top layer disposed between the light absorption layer and the Schottky layer, and
wherein the light absorption layer has an energy band gap higher than that of the buffer layer and the first band gap change
layer has multiple layers each having different Al contents such that the layers of the first band gap change layer have an
increasing energy band gap towards the light absorption layer and the top layer has an energy band gap higher than that of
the light absorption layer.

US Pat. No. 9,450,159

LIGHT-EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode package, comprising:
a package body comprising a cavity and an air discharge channel connected to the cavity;
a light emitting diode disposed in the cavity;
a transparent member covering an upper side of the cavity;
a bonding agent disposed between the transparent member and the package body;
a sealing material disposed in the air discharge channel and blocking the air discharge channel; and
a sealing material blocking dam disposed on the package body between the sealing material and the cavity,
wherein the cavity comprises a closed space.

US Pat. No. 9,847,457

LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a first conductive-type semiconductor layer including a first region and a second region that are arranged at different positions
along a direction parallel to a surface of the first conductive-type semiconductor layer;

a mesa including a second conductive-type semiconductor layer disposed over the first region of the first conductive-type
semiconductor layer and an active layer interposed between the second conductive-type semiconductor layer and the first conductive-type
semiconductor layer, the mesa being not formed over the second region of the first conductive-type semiconductor layer; and

a first electrode disposed over the mesa,
wherein the second region of the first conductive-type semiconductor layer comprises a first contact region disposed around
the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially
surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and
at least a portion of the second contact region, and a linewidth of a contact between the first contact region and the first
electrode is greater than a linewidth of a contact between the second contact region and the first electrode.

US Pat. No. 9,419,180

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode, comprising:
a substrate;
a first light emitting region and a second light emitting region disposed over the substrate;
each light emitting region comprising;
a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor
layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type
semiconductor layer;

a first electrode pad electrically connected to the first conductivity type semiconductor layer;
a second electrode pad formed over the second conductivity type semiconductor layer,
wherein the second electrode pad is electrically insulated from the light emitting structure;
a first extension extending from the first electrode pad towards the second electrode pad and disposed between the first and
second light emitting regions to be electrically connected to a portion of the first conductivity type semiconductor layer
exposed through the second conductivity type semiconductor layer; and

an insulation layer disposed between the second electrode pad and the portion of the first conductivity type semiconductor
layer which is exposed through the second conductivity type semiconductor layer;

wherein the first and the second light emitting regions share the first conductivity-type semiconductor layer and the second
electrode pad.

US Pat. No. 9,343,644

LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) module comprising:
an LED unit having a stacked structure including a first semiconductor layer, an active layer, a second semiconductor layer,
and a reflection pattern that are formed over a substrate, and including a mesa region exposing at least a portion of a surface
of the first semiconductor layer;

a first insulating layer formed over selected portions of the stacked structure to expose the mesa region, the first insulating
layer patterned on the reflection pattern to form a first pad region;

a conductive reflection layer formed over the first insulating layer and the first semiconductor layer exposed in the mesa
region;

a second insulating layer formed over the conductive reflection layer, the second insulating layer patterned on the conductive
reflection layer to form a second pad region;

a first pad formed over the first pad region; and
a second pad formed over the second pad region.

US Pat. No. 9,236,533

LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode, comprising:
a first conductivity-type clad layer;
a light scattering pattern disposed in the first conductivity-type clad layer and having a different index of refraction than
the first conductivity-type clad layer;

a second conductivity-type clad layer disposed on a first side of the first conductivity-type clad layer;
an active layer disposed between the first conductivity-type clad layer and the second conductivity-type clad layer;
a first electrode disposed on a second side of the first conductivity-type clad layer opposite to the first side, the first
electrode electrically connected to the first conductivity-type clad layer; and

a second electrode electrically connected to the second conductivity-type clad layer,
wherein:
the first electrode comprises a bonding pad and an extension; and
the light scattering pattern is disposed under the bonding pad and not disposed under the extension.

US Pat. No. 9,112,102

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a unit chip including a substrate and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type
semiconductor layer which are sequentially stacked on the substrate;

a doped region formed in the side surface of the unit chip; and
an extension electrode disposed on the side surface of the unit chip, and electrically connected to the first conductivity-type
semiconductor layer,

wherein:
a side surface of the unit chip includes a concavo-convex structure having the shape of irregular vertical lines; and
the doped region has a higher conductivity than an undoped region.

US Pat. No. 9,608,171

LIGHT-EMITTING DIODE AND APPLICATION THEREFOR

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a transparent substrate having a first surface, a second surface, and a side surface connecting the first surface and the
second surface;

a first conductive type semiconductor layer placed on the first surface of the transparent substrate;
a second conductive type semiconductor layer placed on the first conductive type semiconductor layer;
an active layer placed between the first conductive type semiconductor layer and the second conductive type semiconductor
layer to generate light;

a first pad electrically connected to the first conductive type semiconductor layer; and
a second pad electrically connected to the second conductive type semiconductor layer,
wherein the light emitting diode further comprises a conformal coating layer covering the second surface of the transparent
substrate, the light emitted through the second surface is discharged through the conformal coating layer, wherein the conformal
coating layer covers the side surface of the transparent substrate from the first surface to the second surface and does not
extend beyond the side surface of the transparent substrate.

US Pat. No. 9,449,815

METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH

Seoul Viosys Co., Ltd., ...

1. A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method
comprising:
disposing a substrate in a chamber;
growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure that
is more than 100 Torr and less than or equal to 300 Torr;

growing a superlattice layer directly on the first conductivity-type gallium nitride-based semiconductor layer, and growing
the superlattice layer comprises:

forming a indium gallium nitride layer at a fourth chamber pressure that is higher than the first chamber pressure and at
a first superlattice growth temperature; and

forming a gallium nitride layer at the fourth chamber pressure and at a second superlattice growth temperature that is within
10° C. of the first superlattice growth temperature;

growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a
second chamber pressure that is higher than the first chamber pressure, and growing the gallium nitride-based active layer
comprises:

growing barrier layers at the second chamber pressure and at a first active layer growth temperature; and
growing well layers at the second chamber pressure and at a second active layer growth temperature that is within 10° C. of
the first active layer growth temperature; and

growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure
that is lower than the second chamber pressure,

wherein the second and third chamber pressures are lower than 760 Torr.

US Pat. No. 9,431,377

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
a substrate;
light emitting cells disposed on the substrate, each light emitting cell comprising a first semiconductor layer, an active
layer, and a second semiconductor layer;

a first connection metal disposed between the substrate and the light emitting cells, the first connection metal electrically
connecting the light emitting cells;

a second connection metal disposed between the first semiconductor layers and the first connection metal, the second connection
metal being electrically connected to the first semiconductor layer;

a first electrode pad spaced apart from light emission surfaces of the light emitting cells and disposed on a first surface
of the light emitting device opposite to the substrate, wherein the first electrode pad is electrically connected to the first
semiconductor layer through the second connection metal;

a second electrode pad spaced apart from light emission surfaces of the light emitting cells, wherein the second electrode
pad is electrically connected to the second semiconductor layer; and

a first insulating layer disposed between the first connection metal and the second connection metal,
wherein a portion of the first insulating layer is disposed on a side surface and a bottom surface of the second semiconductor
layer.

US Pat. No. 9,401,456

LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

SEOUL VIOSYS CO., LTD., ...

1. A light-emitting diode with an improved light extraction efficiency, comprising:
a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer which are formed on a substrate;
an N-type electrode formed on the N-layer including a pad electrode and a dispersion electrode that are adjacent each other
in a horizontal direction;

a P-type electrode formed on the P-layer including a pad electrode and a dispersion electrode that are adjacent each other
in a horizontal direction; and

a reflective electrode layer formed over the N-type electrode and the P-type electrode and configured to reflect light on
the dispersion electrode,

wherein the light-emitting diode further comprises a reflective layer formed between the pad electrode and at least one of
the P and N-layers, and

wherein the reflective layer is patterned to form a roughness on a surface thereof, and the pad electrode is held on any one
of the P and N-layers.

US Pat. No. 9,202,973

LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a substrate;
a plurality of light emitting cells separated from each other on the substrate, and each light emitting cell comprising a
lower semiconductor layer, an active layer disposed on at least a portion of the lower semiconductor layer, an upper semiconductor
layer, and a transparent electrode layer;

a wire layer to electrically connect a lower semiconductor layer of a first light emitting cell to an upper semiconductor
layer of a second light emitting cell adjacent to the first light emitting cell;

an insulation layer disposed between the wire layer and the plurality of light emitting cells to prevent short circuit in
the plurality of light emitting cells due to the wire layer; and

micro-lenses formed on outside surfaces of the plurality of light emitting cells an on an upper surface of the substrate between
the first light emitting cell and the second light emitting cell, the micro-lenses each comprising a horizontal diameter less
than a diameter of each light emitting cell, wherein:

at least two of the micro-lenses are disposed above each light emitting cell in a vertical direction, and the micro-lenses
are formed along the outside surfaces of the plurality of light emitting cells.

US Pat. No. 9,153,745

LIGHT-EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

9. A method of fabricating a light-emitting diode package, comprising:
preparing an insulating silicon substrate;
forming a cavity in the silicon substrate and a stepped portion formed in an upper end of the cavity, wherein a light-emitting
diode is intended to be mounted in the cavity;

forming a through-hole in a bottom of the cavity;
forming a conductive film only on the through-hole, the bottom, and side surfaces of the cavity, and not on the stepped portion;
flip-chip bonding the light-emitting diode on the conductive film on the bottom of the cavity, wherein the light-emitting
diode has a fluorescent layer formed thereon; and

encapsulating the cavity.

US Pat. No. 9,468,699

AIR CONDITIONER HAVING AIR PURIFYING MODULE

SEOUL VIOSYS CO., LTD., ...

1. An air conditioner comprising:
a body including an evaporator for heat-exchanging air flowing in the body;
a first air purifying module and a second air purifying module, each coupled to the body,
wherein each air purifying module includes:
a light emitting diode part disposed along a flow path of the air to provide ultraviolet rays, and
a filter part disposed adjacent to the light emitting diode part, and
wherein the first air purifying module is disposed at a rear end of the evaporator; and
an air circulation unit disposed at a rear end of the first air purifying module,
wherein the second air purifying module is disposed at a rear end of the air circulation unit,
wherein the first air purifying module has a volume larger than a volume of the second air purifying module, and
wherein the light emitting diode part comprises:
a support member spanning the each air purifying module substantially perpendicular to the flow path of the air and defining
a first opening, a second opening, a third opening, and a fourth opening;

a first sterilization light emitting diode disposed on the support member in between the first opening and the second opening;
a first photocatalytic light emitting diode disposed on the support member in between the first opening and the second opening,
a second sterilization light emitting diode disposed on the support member in between the second opening and the third opening;
a second photocatalytic light emitting diode disposed on the support member in between the second opening and the third opening;
a third sterilization light emitting diode disposed on the support member in between the third opening and the fourth opening;
and

a third photocatalytic light emitting diode disposed on the support member in between the third opening and the fourth opening,
wherein the first sterilization light emitting diode, the second photocatalytic light emitting diode, and the third sterilization
light emitting diode are disposed on a first side of the support member, and

wherein the first photocatalytic light emitting diode, the second sterilization light emitting diode, and the third photocatalytic
light emitting diode are disposed on a second side of the support member opposite to the first side of the support member.

US Pat. No. 9,425,347

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF

Seoul Viosys Co., Ltd., ...

1. A method of manufacturing a semiconductor substrate, the method comprising:
forming a first semiconductor layer on a substrate;
forming a metallic material layer on a first portion of the first semiconductor layer;
forming a second semiconductor layer on the first semiconductor layer and the metallic material layer; and
forming a cavity in a portion of the first semiconductor layer directly under the metallic material layer along a line perpendicular
to the plane of the substrate,

wherein:
the second semiconductor layer directly contacts a second portion of the first semiconductor layer;
the metallic material layer comprises titanium or chromium; and
the semiconductor substrate is formed by separating the substrate from the first semiconductor layer and the second semiconductor
layer using the cavity formed in the first semiconductor layer.

US Pat. No. 9,219,198

METHOD FOR FORMING METAL ELECTRODE, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENTS AND NITRIDE BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENTS

Seoul Viosys Co., Ltd., ...

1. A method for forming a metal electrode, comprising:
forming a semiconductor layer on a substrate;
forming a bonding metal layer on the semiconductor layer;
forming a reflective meta layer on the bonding metal layer; and
forming the metal electrode by inverting the bonding metal layer and the reflective metal layer through a heat treatment process,
wherein the bonding metal layer comprises one selected from the group consisting of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca,
Sr, Ba and alloys including at least one of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Ca, Sr, Ba, and

wherein the reflective metal layer comprises one selected from the group consisting of Al, Rh, Ru, Ag and alloys including
at least one of Al, Rh, Ru and Ag.

US Pat. No. 9,171,976

LIGHT DETECTION DEVICE

Seoul Viosys Co., Ltd., ...

1. A light detection device comprising:
a substrate;
a buffer layer disposed on the substrate;
a first band gap change layer disposed directly on a first portion of the buffer layer less than an entire upper surface of
the buffer layer;

a second electrode layer disposed directly on a second portion of the buffer layer less than the entire upper surface of the
buffer layer, the second electrode layer being spaced apart from the first band gap change layer;

a light absorption layer disposed on the first band gap change layer;
a Schottky layer disposed on a portion of the light absorption layer; and
a first electrode layer disposed on a portion of the Schottky layer;
wherein the first band gap change layer is configured to transmit current from the light absorption layer to the second electrode
layer.

US Pat. No. 9,171,986

SEMICONDUCTOR PHOTO-DETECTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A photo-detecting device, comprising:
a first nitride layer;
a low-current blocking layer disposed on the first nitride layer, the low-current blocking layer comprising a multilayer structure;
a light absorption layer disposed on the low-current blocking layer; and
a Schottky junction layer disposed on the light-absorption layer.

US Pat. No. 9,142,622

METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A nitride semiconductor device, comprising:
a gallium nitride substrate comprising non-defect regions, a first defect region disposed between the non-defect regions,
and a second defect region extending from the first defect region;

a gallium nitride-based defect dispersion suppressing layer disposed on the gallium nitride substrate, and
a gallium nitride semiconductor layer disposed on the defect dispersion suppressing layer,
wherein a width of the second defect region on a surface of the gallium nitride semiconductor layer does not exceed two times
a width of the first defect region, wherein the gallium nitride substrate comprises a semi-polar or non-polar substrate, and
the non-defect regions comprise different off-angles with respect to a [0001] direction.

US Pat. No. 9,123,866

LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a light emitting structure;
a substrate disposed on the light emitting structure; and
an anti-reflection layer covering side surfaces of the light emitting structure and the substrate,
wherein:
the light emitting structure comprises:
a first conductive type semiconductor layer;
a plurality of mesas disposed to be separated from each other under the first conductive type semiconductor layer, each of
the mesas comprising an active layer and a second conductive type semiconductor layer;

reflective electrodes disposed under the mesas, respectively, and forming ohmic contact with the second conductive type semiconductor
layer; and

a current spreading layer covering the mesas and the first conductive type semiconductor layer;
the current spreading layer has openings disposed under the respective mesas such that the reflective electrodes are exposed
therethrough, forms ohmic contact with the first conductive type semiconductor layer, and is insulated from the mesas; and

at least a portion of an upper surface of the substrate is exposed.

US Pat. No. 9,059,015

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting device, comprising:
a substrate;
a first connection metal disposed on the substrate;
light-emitting regions disposed on the first connection metal, each light-emitting region comprising an upper semiconductor
layer, a lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers;

a second connection metal electrically connecting adjacent light-emitting regions to each other and comprising openings in
which the light-emitting regions are disposed;

a bonding metal disposed between the substrate and the first connection metal, the bonding metal being disposed continuously
over an entire area below all of the light-emitting regions;

a first insulation layer disposed on the second connection metal, surrounding the light emitting regions, and comprising openings
in which the light-emitting regions are disposed; and

a second insulation layer disposed between the first connection metal and the second connection metal,
wherein the light-emitting regions are connected in parallel by the first connection metal and the second connection metal.

US Pat. No. 9,048,086

SUBSTRATE RECYCLING METHOD

Seoul Viosys Co., Ltd., ...

1. A method of recycling a substrate, the method comprising:
separating a first surface of a substrate from an epitaxial layer;
forming a protective layer on an opposing second surface of the substrate;
electrochemically etching the first surface of the substrate; and
chemically etching the electrochemically etched first surface of the substrate.

US Pat. No. 9,608,168

LIGHT EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a lower electrode providing a passage for an electric current;
a light emitting structure placed over the lower electrode to be electrically connected to the lower electrode and operable
to emit light in response to the electric current, the light emitting structure is disposed to form a via-hole;

a reflective electrode layer placed between the lower electrode and the light emitting structure to conduct the electric current
from the lower electrode to the light emitting structure; and

an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light
emitting structure through the via-hole.

US Pat. No. 9,520,534

LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) module comprising:
a printed circuit board; and a light emitting diode bonded to an upper side of the printed circuit board, the light emitting
diode comprising: a first conductive-type semiconductor layer; a mesa placed on the first conductive-type semiconductor layer
and including an active layer and a second conductive-type semiconductor layer; a reflective electrode structure disposed
on the mesa; a current spreading layer covering the mesa and the first conductive-type semiconductor layer, and having an
opening exposing the reflective electrode structure, the current spreading layer being electrically connected to the first
conductive-type semiconductor layer while being insulated from the reflective electrode structure and the mesa; and an upper
insulation layer covering the current spreading layer, the upper insulation layer having a first opening exposing the current
spreading layer to define a first electrode pad region, and a second opening exposing an exposed upper region of the reflective
electrode structure to define a second electrode pad region, wherein the first electrode pad region and the second electrode
pad region are bonded to corresponding pads on the printed circuit boards via solder pastes, respectively.

US Pat. No. 9,466,761

LIGHT EMITTING DIODE HAVING WELL AND/OR BARRIER LAYERS WITH SUPERLATTICE STRUCTURE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) comprising:
an N-type GaN-based semiconductor compound layer;
a P-type GaN-based semiconductor compound layer; and
an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers
having a first superlattice structure and barrier layers,

wherein:
each of the well layers comprises alternately laminated InxGa1-xN layers and InyGa1-yN layers, where 0?x, y?1, and x>y;

the well layers and the barrier layers comprise three different compositions; and
the barrier layers have a second superlattice structure and are formed by alternately growing InN and GaN.

US Pat. No. 9,450,141

METHOD FOR SEPARATING GROWTH SUBSTRATE, METHOD FOR LIGHT-EMITTING DIODE, AND LIGHT-EMITTING DIODE MANUFACTURED USING METHODS

SEOUL VIOSYS CO., LTD., ...

1. A method of separating a growth substrate, comprising:
preparing a growth substrate;
forming a sacrificial layer over the growth substrate;
forming a mask pattern over the sacrificial layer, wherein the mask pattern exposes at least a portion of the sacrificial
layer;

etching at least a portion of the sacrificial layer via an electrochemical etching (ECE);
forming a plurality of nitride semiconductor stack structures over the sacrificial layer to cover at least a portion of the
mask pattern, the nitride semiconductor stack structures being isolated from one another by device isolation regions;

forming a support substrate over the plurality of nitride semiconductor stack structures, the support substrate having a plurality
of through-holes connected to the device isolation regions; and

separating the growth substrate from the nitride semiconductor stack structures.

US Pat. No. 9,269,745

LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
light emitting units disposed on a substrate, the light emitting units comprising a parallelogram-shaped light emitting unit
having two acute angles and two obtuse angles and a triangular-shaped light emitting unit having three acute angles; and

wires connecting the light emitting units to each other.

US Pat. No. 9,269,867

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting device, comprising:
a first conductivity-type semiconductor layer disposed on a substrate;
an active layer disposed on the first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer disposed on the active layer;
an irregular convex-concave pattern disposed on a surface of the first conductivity-type semiconductor layer; and
a first electrode pad,
wherein the irregular convex-concave pattern comprises convex portions and concave portions, the convex portions comprising
irregular heights, the concave portions comprising irregular depths,

wherein the first conductivity-type semiconductor layer comprising the irregular convex-concave pattern is exposed from the
active layer and the second conductivity-type semiconductor layer,

wherein the irregular convex-concave pattern is disposed between the first electrode pad and the second conductivity-type
semiconductor layer,

wherein the first conductivity-type semiconductor layer comprises first, second, and third N-GaN layers, the first and third
N-GaN layers being doped with a higher density of n-type impurities than the second N-GaN layer, and

wherein a first part of the concave portions of the irregular convex-concave pattern extend to a portion of the second N-GaN
layer or over an entire region of the second N-GaN layer, or extend to an upper region of the first N-GaN layer.

US Pat. No. 9,240,524

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting device, comprising:
a frame portion comprising a bottom and a sidewall;
a light-emitting portion disposed on the frame portion; and
a window portion disposed on the frame portion, the window portion covering the light-emitting portion,
wherein the frame portion comprises:
an insulating separation layer;
a first frame disposed on a first side of the insulating separation layer, the first frame comprising a bottom and a sidewall,
and being integrally formed of a metal material;

a second frame disposed on a second side of the insulating separation layer, the second frame comprising a bottom and a sidewall,
and being integrally formed of the same metal material as the first frame; and

a through-hole that connects an external space of the light-emitting device with an internal space defined by the window portion
and the frame portion,

wherein the first and second frames comprise the bottom and sidewall of the light-emitting device, and the insulating separation
layer electrically insulates the first frame and the second frame.

US Pat. No. 9,224,913

NEAR UV LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
an n-type contact layer comprising a GaN layer;
a p-type contact layer comprising a GaN layer;
an active area comprising barrier layers and well layers that form a multi-quantum well structure disposed between the n-type
contact layer and the p-type contact layer, the barrier layers comprising Al, the active area configured to emit near ultraviolet
light at wavelengths of 375 nm to 390 nm;

a superlattice layer disposed between the n-type contact layer and the active area; and
an electron implantation layer disposed between the superlattice layer and the active area, the electron implantation layer
comprising a higher n-type impurity doping density than the superlattice layer,

wherein a first one of the barrier layers is disposed closest to the n-type contact layer, comprises 10% to 20% more Al than
the other barrier layers, and has at least a 0.5 eV wider band gap than the other barrier layers, and

wherein the active layer adjoins the electron implantation layer.

US Pat. No. 9,224,917

LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a support substrate;
a first semiconductor layer disposed on the support substrate;
a second semiconductor layer disposed on the first semiconductor layer;
an active region disposed between the first and second semiconductor layers; and
a photonic crystal structure embedded in the first semiconductor layer,
wherein:
the first semiconductor layer comprises a p-type contact layer and a p-type clad layer;
the photonic crystal structure comprises a pattern of voids disposed on the support substrate;
the pattern of voids are disposed at an interface between the p-type contact layer and the p-type clad layer; and
a width and a height of each void of the pattern of voids is within a range of 50 to 200 nm, and a distance between two adjacent
voids is within a range of 50 nm to 1 ?m.

US Pat. No. 9,209,223

LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
a first light emitting region comprising:
a first n-type semiconductor layer disposed on a first portion of a substrate;
a first active layer disposed on the first n-type layer;
a first p-type semiconductor layer disposed on the first active layer; and
a first p-electrode electrically connected to the first p-type semiconductor layer;
a second light emitting region comprising:
a second active layer disposed on a second portion of the substrate;
a second p-type semiconductor layer disposed on the second active layer; and
a second p-electrode connected to the second p-type semiconductor layer;
an etching region including side surfaces of the first light emitting region and the second light emitting region and disposed
between the first light emitting region and the second light emitting region;

a first insulation layer covering the first light emitting region and the second light emitting region and comprising:
a first opening exposing a top surface of the first n-type semiconductor layer; and
at least one second opening exposing the first p-type electrode and the second p-electrode; and
a second insulation layer covering a first n-electrode and the first insulation layer,
wherein the first n-electrode extends from a side of the second p-type semiconductor layer and is electrically connected to
the first n-type semiconductor layer through the first opening,

wherein the second insulation layer has a substantially constant thickness and a shape that corresponds to the contour of
the first and second light emitting regions, and

wherein the first n-electrode, the first p-electrode, and the second p-electrode are formed on the same light emitting region.

US Pat. No. 9,059,012

EPITAXIAL LAYER WAFER HAVING VOID FOR SEPARATING GROWTH SUBSTRATE THEREFROM AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME

Seoul Viosys Co., Ltd., ...

12. A method of separating a substrate, comprising:
forming a mask pattern comprising a masking region and an opening region, on a growth substrate;
growing an epitaxial layer on the growth substrate so as to cover the mask pattern, the epitaxial layer comprising a void
disposed on the masking region; and

separating the growth substrate and the epitaxial layer wherein the void comprises: a lower void disposed between a lower
surface of the epitaxial layer and the masking region; and an upper void extending from the lower void into the epitaxial
layer, wherein the lower void has a larger width than the upper void.

US Pat. No. 9,653,645

LIGHT EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor
layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type
semiconductor layer;

a first contact electrode forming ohmic contact with the first conductive type semiconductor layer;
a second contact electrode disposed on the second conductive type semiconductor layer; and
an insulation layer disposed on the light emitting structure and insulating the first contact electrode from the second contact
electrode,

wherein the first conductive type semiconductor layer comprises a nitride-based substrate,
the nitride-based substrate having a thread dislocation density of 104 cm?2 or less, an oxygen impurity concentration of 1019 cm?3 or less, and an optical extinction coefficient of less than 5 cm?1 at a wavelength of 465 nm to 700 nm.

US Pat. No. 9,514,926

SUBSTRATE RECYCLING METHOD

SEOUL VIOSYS CO., LTD., ...

1. A method of recycling a substrate, the method comprising:
separating a first surface of a substrate from an epitaxial layer;
forming a protective layer on a second surface of the substrate;
chemically etching the first surface of the substrate; and
before the chemically etching of the first surface of the substrate, forming the protective layer on at least a portion of
a side surface of the substrate.

US Pat. No. 9,496,455

UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A method of fabricating a UV light emitting diode, comprising:
forming an n-type semiconductor layer over a growth substrate within a growth chamber; and
forming an active layer and a p-type semiconductor layer over the n-type semiconductor layer,
wherein:
the forming the n-type semiconductor layer includes growing a first n-type semiconductor layer including AlGaN,
the growing the first n-type semiconductor layer includes changing a growth pressure within the growth chamber and changing
a flow rate of an n-type dopant source introduced into the growth chamber,

the changing the growth pressure during growth of the first n-type semiconductor layer includes performing at least one cycle
of a pressure increasing period and a pressure decreasing period, and

the changing the flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in a
pulse form.

US Pat. No. 9,349,912

LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS

Seoul Viosys Co., Ltd., ...

1. A light-emitting device, comprising:
a single substrate;
at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units comprising:
a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed
between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;

a first electrode connected to the first conductivity-type semiconductor layer; and
a second electrode connected to the second conductivity-type semiconductor layer; and
a node connected to a portion of the at least two light-emitting units,
wherein:
the at least two light-emitting units each comprise a half-wave light-emitting unit or a full-wave light-emitting unit;
two light-emitting units of the at least two light-emitting units each comprise full-wave light-emitting units, and share
the first conductivity-type semiconductor layer;

the other light-emitting units besides the two full-wave light-emitting units of the at least two light-emitting units comprise
half-wave light-emitting units;

the half-wave light-emitting units each comprise a first terminal and a second terminal;
the full-wave light-emitting units each comprise a third terminal having the same polarity as the first terminal and a fourth
terminal having the same polarity as the second terminal;

the third terminal of each full-wave light-emitting unit is connected to the second terminal of adjacent half-wave light-emitting
units and the fourth terminal of each full-wave light-emitting unit is connected to the first terminal of adjacent half-wave
light emitting units;

the two full-wave light-emitting units are disposed on opposite sides of the node;
two half-wave light-emitting units of the half-wave light-emitting units are disposed on opposite sides of the node; and
the node comprises the shared the first conductivity-type semiconductor layer.

US Pat. No. 9,205,159

MULTI-CHARGING AND STERILIZING APPARATUS

SEOUL VIOSYS CO., LTD., ...

1. A multi-charging and sterilizing apparatus comprising:
a case having a slot unit on one surface thereof;
a plurality of slots formed as part of the slot unit and structured to allow for an object to be inserted into and mounted
in one of the plurality of slots; and

ultraviolet sources disposed in the respective slots to irradiate ultraviolet on front surfaces and rear surfaces of the objects.

US Pat. No. 9,209,358

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode (LED), comprising:
a conductive substrate; and
a gallium nitride (GaN)-based semiconductor stack disposed on the conductive substrate,
wherein:
the semiconductor stack comprises an active layer comprising a semi-polar semiconductor material; and
the LED is free of a growth substrate.

US Pat. No. 9,202,984

LIGHT-EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A Light-Emitting Diode (LED), comprising:
a semiconductor stack structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer,
the semiconductor stack structure being disposed on a substrate;

a GaN substrate disposed on the semiconductor stack structure; and
an electrode disposed on and in ohmic contact with the GaN substrate,
wherein the electrode comprises grooves penetrating the electrode and a portion of the GaN substrate, and
wherein the electrode comprises:
an electrode pad; and
extension pads extended from the electrode pad.

US Pat. No. 9,166,092

LIGHT DETECTION DEVICE

Seoul Viosys Co., Ltd., ...

1. A light detection device, comprising:
a substrate;
a non-porous layer disposed on the substrate;
a light absorption layer disposed on the non-porous layer, the light absorption layer comprising pores formed in a surface
thereof;

a Schottky layer disposed on the surface of the light absorption layer and in the pores;
a first electrode layer disposed on the Schottky layer; and
a buffer layer disposed between the substrate and the non-porous layer.

US Pat. No. 9,093,627

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the
second light emitting being spaced apart from each other;

a first transparent electrode layer disposed on the first light emitting cell, the first transparent electrode layer being
electrically connected to the first light emitting cell;

a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer;
an interconnection electrically connecting the first light emitting cell and the second light emitting cell; and
an insulation layer disposed between the interconnection and a side surface of the first light emitting cell,
wherein the current blocking layer and the insulation layer are connected to each other.

US Pat. No. 9,627,435

LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
a substrate;
a first light emitting cell disposed on the substrate and a second light emitting cell disposed on the substrate, wherein
the first and second light emitting cells comprise:

a first semiconductor layer and a second semiconductor layer;
an active layer disposed between the first and the second semiconductors layers; and
a first inclined surface;
a first conductive material disposed on the second semiconductor layer of the second light emitting cell;
a first insulation layer that overlaps the first conductive material and the first and second light emitting cells;
a second conductive material that overlaps the first insulation layer and electrically connects the first light emitting cell
and the second light emitting cell; and

a second insulation layer that overlaps the second conductive material,
wherein both the first insulation layer and the second insulation layer comprise a light transmitting material; and
wherein the first inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal
plane of the substrate.

US Pat. No. 9,608,165

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a light emitting diode (LED), comprising: sequentially stacking a first conductivity-type semiconductor
layer; an active layer, and a second conductivity-type semiconductor layer on a substrate; separating the substrate along
at least two side surfaces into unit chips, and at the same time, forming a concavo-convex structure having a shape of irregular
vertical lines in the at least two side surfaces of at least one of the unit chips; and forming an extension electrode electrically
connected to the first conductivity-type semiconductor layer, on the at least two side surfaces of the at least one of the
unit chips, wherein an entirety of the extension electrode is formed below a top surface of the active layer.

US Pat. No. 9,608,186

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode module comprising:
a printed circuit board; and
a light emitting diode bonded to the printed circuit board and including:
a first conductive-type semiconductor layer;
a mesa placed on the first conductive-type semiconductor layer and including an active layer and a second conductive-type
semiconductor layer;

a first electrode pad electrically connected to the first conductive-type semiconductor layer; and
a second electrode pad electrically connected to the second conductive-type semiconductor layer of the mesa,
wherein the first electrode pad and the second electrode pad are respectively bonded to corresponding pads on the printed
circuit board via solder paste, and

each of the first electrode pad and the second electrode pad comprises a solder barrier layer and an oxidation barrier layer.

US Pat. No. 9,520,533

ULTRAVIOLET LIGHT EMITTING DEVICE SEPARATED FROM GROWTH SUBSTRATE AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A method of fabricating a UV light emitting device, comprising:
forming a first super-lattice layer comprising AlxGa(1-x)N on a substrate;

forming a sacrificial layer comprising AlzGa(1-z)N on the first super-lattice layer;

partially removing the sacrificial layer;
forming an epitaxial layer on the sacrificial layer; and
separating the substrate from the epitaxial layer,
wherein the sacrificial layer comprises voids, the substrate is separated from the epitaxial layer at the sacrificial layer,
and

wherein the forming of the epitaxial layer comprises forming an n-type semiconductor layer comprising n-type AluGa(1-u)N (0

US Pat. No. 9,520,543

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode module comprising:
a printed circuit board; and
a light emitting diode bonded to the printed circuit board,
the light emitting diode comprising:
a first conductive-type semiconductor layer;
a mesa placed on the first conductive-type semiconductor layer, the mesa-including an active layer and a second conductive-type
semiconductor layer;

a reflective electrode structures-placed on the mesa;
an anti-diffusion reinforcing layer placed on the reflective electrode structure;
a first electrode pad electrically connected to the first conductive-type semiconductor layer; and
a second electrode pad electrically connected to the anti-diffusion reinforcing layer,
wherein the first electrode pad and the second electrode pad are respectively bonded to corresponding pads on the printed
circuit board via solder paste.

US Pat. No. 9,520,546

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a first conductive-type semiconductor layer;
a mesa placed on the first conductive-type semiconductor layer, the mesa including an active layer and a second conductive-type
semiconductor layer;

a reflective electrode structure placed on the mess;
a current spreading layer covering the mesa and the first conductive-type semiconductor layer, and including an opening placed
in an upper region of the mesa while exposing the reflective electrode structure, the current spreading layer forming ohmic
contact with the first conductive-type semiconductor layer and being insulated from the mesa;

a lower insulation layer placed between the mesa and the current spreading layer and insulating the current spreading layer
from the mesa, the lower insulation layer including an opening placed in the upper region of the mesa and exposing the reflective
electrode structure;

an upper insulation layer covering at least part of the current spreading layer and including an opening on the reflective
electrode structure,

wherein the opening of the upper insulation layer is narrower than the opening of the lower insulation layer.

US Pat. No. 9,515,121

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a substrate;
a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and
an interconnection electrically connecting the first light emitting cell to the second light emitting cell,
wherein each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type
semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the
first conductive-type semiconductor layer and the second conductive-type semiconductor layer,

wherein at least one of the first light emitting cell and the second light emitting cell includes a side surface inclined
with respect to the substrate, and

wherein the side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second
inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section disposed
between the first inclined portion and the second inclined portion, and the first inclined portion and the second inclined
portion are formed along a longitudinal direction of the light emitting cell, and wherein the first inclined portion and the
second inclined portion are in separate regions along the longitudinal direction of the light emitting cell.

US Pat. No. 9,508,909

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode, comprising:
a support substrate;
a semiconductor stack disposed on the support substrate, the semiconductor stack comprising a p-type compound semiconductor
layer, an active layer and a n-type semiconductor layer;

a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being
in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and comprising a groove exposing
a portion of the semiconductor stack;

a first electrode pad contacting the n-type compound semiconductor layer of the semiconductor stack;
an electrode extension connected to the first electrode pad, the electrode extension overlapping the groove; and
an upper insulation layer disposed between the first electrode pad and the semiconductor stack,
wherein the electrode extension comprises an Ni layer contacting the n-type compound semiconductor layer, and at least two
Au layers disposed on the Ni layer.

US Pat. No. 9,397,269

LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) comprising:
a substrate;
a first semiconductor layer formed on the substrate;
an active layer formed on the first semiconductor layer and configured to generate light;
a second semiconductor layer formed on the active layer and having a complementary conductive type to the first semiconductor
layer; and

a reflection pattern formed between portions of a protective insulating layer formed on the second semiconductor layer and
configured to reflect light generated in the active layer, the reflection pattern having a conductive barrier layer contacting
the protective insulating layer, wherein the reflection pattern further comprises a reflective metal layer formed on the second
semiconductor layer and configured to reflect light, and the conductive barrier layer shields top and side surfaces of the
reflective metal layer, wherein the reflection pattern further comprises a stress relaxation layer formed between the reflective
metal layer and the conductive barrier layer and configured to absorb stress caused by a difference in coefficient of thermal
expansion between the reflective metal layer and the conductive barrier layer.

US Pat. No. 9,231,169

HIGH EFFICIENCY LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

14. A light emitting diode, comprising:
a semiconductor stack comprising a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor
layer;

a first electrode disposed on the semiconductor stack;
a reflective metal layer disposed below the semiconductor stack; and
a metamaterial that is different from the reflective metal layer, the metamaterial disposed between the first electrode and
the semiconductor stack.

US Pat. No. 9,202,968

METHOD OF FABRICATING VERTICAL LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a light emitting diode (LED), the
method comprising:
forming a semiconductor structure layer on a first surface of a growth substrate, the semiconductor structure layer comprising
an active layer;

forming a conductive support substrate on the semiconductor structure layer;
abrading a second surface of the growth substrate;
dry etching the second surface of the growth substrate, after abrading the second surface of the growth substrate; and
forming a warpage compensation support substrate on the conductive support substrate after abrading the second surface of
the growth substrate and before dry etching the second surface of the growth substrate.

US Pat. No. 9,166,093

PHOTO DETECTION DEVICE, PHOTO DETECTION PACKAGE INCLUDING THE PHOTO DETECTION DEVICE, AND PORTABLE DEVICE INCLUDING THE PHOTO DETECTION PACKAGE

Seoul Viosys Co., Ltd., ...

1. A photo detection package, comprising:
a package body configured to have an upward opened groove unit formed in the package body;
a photo detection device mounted on a bottom surface of the groove unit and electrically connected externally; and
a Light-Emitting Diode (LED) mounted on an inner surface of the groove unit that is formed of an inclined surface on a periphery
of the bottom surface and electrically connected externally.

US Pat. No. 10,046,074

FLUID STERILIZER AND ASSOCIATED CONNECTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A sterilizer for sterilizing a fluid, comprising:a first pipe having an inner wall that reflects ultraviolet (UV) light;
a second pipe disposed in the first pipe to pass a fluid therethrough and formed of a light transmitting material to allow the UV light to enter the second pipe to illuminate and to sterilize the fluid;
a first UV light emitting diode (LED) and a second UV LED that are arranged on the inner wall of the first pipe and configured to irradiate sterilization UV light onto the fluid, wherein the first and second UV LEDs are arranged in a zigzag pattern on two opposite sides of the inner wall of the first pipe; and
a light reflecting structure disposed on the inner wall of the first pipe between the first and the second UV LEDs such that the light reflecting structure, in cooperation with reflection of the inner wall of the first pipe, reflects UV light so as to prevent occurrence of a non-irradiation area of the UV light within the second pipe,
wherein the light reflecting structure extends from the inner wall of the first pipe to an external wall of the second pipe and is located in a space that is between the first and the second UV LEDs along a lengthwise direction of the first pipe.

US Pat. No. 9,871,168

LIGHT EMITTING DIODE DEVICE HAVING CONNECTED LIGHT EMITTING DIODE ELEMENTS AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode device comprising:
a substrate;
a plurality of light emitting diode elements disposed on the substrate and including outer light emitting diode elements that
include a first light emitting diode element and a second light emitting diode and are aligned along an edge of the substrate;
and

interconnection lines formed on the substrate to connect the light emitting diode elements in series with one another and
including an interconnection line connecting the first light emitting diode element to the second light emitting diode element
in series and disposed along the edge of the substrate,

wherein each of the outer light emitting diode elements includes an inner face directed towards an adjacent light emitting
diode element at a first angle with respect to a surface of the substrate and an outer face disposed adjacent the edge of
the substrate and directed towards an outside of the substrate at a second angle with respect to the surface of the substrate,
the first angle being less than the second angle,

wherein at least one of the outer light emitting diode elements includes a first side surface disposed adjacent an edge of
a side surface of the substrate and a second side surface disposed adjacent an edge of another side surface of the substrate.

US Pat. No. 9,851,056

COMPACT LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE HAVING A SLIM STRUCTURE WITH SECURED DURABILITY

Seoul Viosys Co., Ltd., ...

1. A light emitting diode chip comprising:
a substrate;
a first conductive type semiconductor layer disposed on the substrate;
a mesa disposed on the first conductive type semiconductor layer and comprising an active layer and a second conductive type
semiconductor layer;

an insulation layer covering the first conductive type semiconductor layer and the mesa, the insulation layer comprising at
least one first opening exposing the first conductive type semiconductor layer and a second opening disposed on the mesa;

a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor
layer through the first opening; and

a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor
layer through the second opening,

wherein the first opening of the insulation layer comprises a first region covered by the first pad electrode and a second
region exposed outside the first pad electrode.

US Pat. No. 9,853,182

GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) comprising:
a gallium nitride substrate having a growth plane of an m plane;
a gallium nitride-based first contact layer disposed on the gallium nitride substrate;
a gallium nitride-based second contact layer disposed at an upper portion of the first contact layer;
an active layer having a multi-quantum well structure and disposed between the first and second contact layers;
a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer;
a middle temperature buffer layer positioned between the substrate and the gallium nitride-based first contact layer,
a lower GaN layer positioned between the substrate and the gallium nitride-based first contact layer; and
an intermediate layer positioned between the gallium nitride-based first contact layer and the lower GaN layer,
wherein the intermediate layer is an AlGaN layer,
wherein the middle temperature buffer layer is grown from the gallium nitride substrate at a growth temperature ranging from
700° C. to 800° C., and

wherein the gallium nitride substrate and the middle temperature buffer layer are formed of the same material.

US Pat. No. 9,728,404

METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A method of growing a nitride semiconductor layer, the method comprising:
growing a gallium nitride-based defect dispersion suppressing layer over a gallium nitride substrate comprising non-defect
regions and a defect region disposed between the non-defect regions, wherein the gallium nitride-based defect dispersion suppressing
layer is grown over the non-defect regions and the defect region disposed between the non-defect regions; and

growing a gallium nitride-based semiconductor layer over the defect dispersion suppressing layer,
wherein the defect dispersion suppressing layer is grown at a temperature in a range of 900° C. to 1030° C., and the growth
temperature of the defect dispersion suppressing layer is lower than the growth temperature of the gallium nitride-based semiconductor
layer; and

wherein the gallium nitride substrate comprises a semi-polar or nonpolar substrate, and the non-defect regions comprise different
off-angles with respect to a [0001] direction.

US Pat. No. 9,577,171

LIGHT EMITTING DEVICE PACKAGE HAVING IMPROVED HEAT DISSIPATION EFFICIENCY

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a substrate including a base and a conductive pattern disposed over the base; and
a light emitting structure formed over the substrate and including a light emitting structure, and a first electrode pad,
a second electrode pad and a heat dissipation pad extending under the light emitting structure, the light emitting structure
including:

a first conductive type semiconductor layer;
an active layer disposed under the first conductive type semiconductor layer;
a second conductive type semiconductor layer disposed under the active layer;
an exposed region partially formed on the lower surface of the first conductive type semiconductor layer by partially removing
the active layer and the second conductive type semiconductor layer;

a first electrode forming ohmic contact with the first conductive type semiconductor layer through the exposed region of the
first conductive type semiconductor layer;

a second electrode forming ohmic contact with the second conductive type semiconductor layer; and
a first insulation layer partially covering the second electrode,
wherein the first electrode pad is electrically connected to the first electrode,
the second electrode pad is electrically connected to the second electrode,
the base includes a post and a groove separating the post from the conductive pattern,
the heat dissipation pad and the post being electrically insulated from the light emitting structure,
the heat dissipation pad contacts an upper surface of the post, and
the first electrode pad and the second electrode pad contact the conductive pattern.

US Pat. No. 9,543,476

UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A UV light emitting diode, comprising:
an active area disposed between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer,
the active area comprising:
a plurality of barrier layers containing Al;
a plurality of well layers containing Al, wherein the well layers and the barrier layers are disposed over each other in an
alternating arrangement; and

a conditioning layer disposed between one of the well layers and one of the barrier layers, wherein the conditioning layer
comprises a well-conditioning layer and a barrier-conditioning layer that are respectively formed at both surfaces of the
one of the barrier layers and include Al, to reduce a stress of the active area or improve uniform composition of the active
area;

wherein the conditioning layer includes a nitride semiconductor including AlN.

US Pat. No. 9,543,488

LIGHT EMITTING DEVICE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer,
and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor
layer;

first and second contact electrodes disposed over the light emitting structure, the first and second contact electrodes ohmic-contacting
the first and second conductive type semiconductor layers, respectively;

an insulating layer insulating the first and second contact electrodes from each other and at least partially covering the
first and second contact electrodes;

a stress buffering layer disposed over the insulating layer;
first and second bulk electrodes disposed over the light emitting structure and the stress buffering layer, the first and
second bulk electrodes electrically connected to the first and second contact electrodes, respectively; and

an insulation support covering side surfaces of the first and second bulk electrodes and at least partially exposing upper
surfaces of the first and second bulk electrodes,

wherein the first bulk electrode includes a protrusion part protruding from a side surface of the first bulk electrode toward
the second bulk electrode, and

the second bulk electrode includes a concave part depressed from a side surface of the second bulk electrode;
wherein the insulating layer includes first and second insulating layers,
the first insulating layer partially covers the second contact electrode and includes first and second opening parts each
partially exposing the first conductive type semiconductor layer and the second contact electrode,

the first contact electrode partially covers the first insulating layer, and
the second insulating layer partially covers the first contact electrode and includes third and fourth opening parts each
partially exposing the first and second contact electrodes.

US Pat. No. 9,530,939

LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a substrate;
a first semiconductor layer disposed on the substrate;
an active layer disposed on a portion of the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a reflection pattern disposed on a portion of the second semiconductor layer; and
a first insulating layer comprising a first portion having a first thickness and a second portion having a second thickness
different from the first thickness,

wherein:
the first portion is disposed on the reflection pattern; and
the second portion is disposed on the second semiconductor layer.

US Pat. No. 9,506,623

SURFACE LIGHT-EMITTING UV LED LAMP AND MANUFACTURING METHOD THEREOF

SEOUL VIOSYS CO., LTD., ...

1. A UV LED lamp comprising:
a UV LED chip;
a substrate having the UV LED chip mounted thereon; and
a cover disposed apart by a distance from the UV LED chip and configured to convert point UV light, emitted from the UV LED
chip, into surface light, the cover having an inner surface facing the UV LED chip and an outer surface opposite the inner
surface,

wherein the inner surface and outer surface of the cover are roughened, and the amount of total reflection from the roughened
inner surface is greater than the amount of total reflection from the roughened outer surface.

US Pat. No. 9,455,378

HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) comprising:
a semiconductor stack comprising a first compound semiconductor layer, a second compound semiconductor layer, and an active
layer disposed between the first compound semiconductor layer and the second compound semiconductor layer;

an insulating layer disposed on the semiconductor stack;
an electrode layer disposed on the insulating layer and the semiconductor stack; and
a reflective insulating layer disposed on the electrode layer, the reflective insulating layer comprising through-holes through
which portions of the electrode layer are exposed.

US Pat. No. 9,136,432

HIGH EFFICIENCY LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

11. A light emitting diode, comprising:
a substrate;
a semiconductor stack disposed on the substrate, the semiconductor stack comprising a p-type compound semiconductor layer,
an active layer, and an n-type compound semiconductor layer;

a reflective metal layer disposed between the substrate and the semiconductor stack and in ohmic contact with the p-type compound
semiconductor layer, the reflective metal layer and comprising a groove exposing a portion of the semiconductor stack;

a first electrode pad disposed on the n-type compound semiconductor layer;
an electrode extension extending from the first electrode pad and disposed over the groove; and
a first insulating layer disposed between a side surface of the first electrode pad and a side surface the semiconductor stack,
wherein the n-type compound semiconductor layer comprises an n-type contact layer and a first recovering layer disposed between
the n-type contact layer and the active layer,

wherein the first recovering layer comprises an undoped layer or a low doped layer comprising a doping concentration lower
than that of the n-type contact layer, and

wherein the n-type contact layer has a thickness in the range of 4.5 to 10 ?m.

US Pat. No. 10,134,956

LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:a support substrate;
a light emitting structure disposed on the support substrate and having an m-plane or an a-plane growth plane, the light emitting structure comprising a second conductive type semiconductor layer, an active layer disposed on the second conductive type semiconductor layer, and a first conductive type semiconductor layer disposed on the active layer;
at least one groove formed on a lower surface of the light emitting structure and partially exposing the first conductive type semiconductor layer;
a second type electrode disposed at least on a lower surface of the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;
an insulation layer partially covering the second type electrode and the lower surface of the light emitting structure, and having at least one opening corresponding to the at least one groove; and
a first type electrode electrically connected to the first conductive type semiconductor layer exposed through the at least one groove and at least partially covering the insulation layer,
wherein the second type electrode comprises a second type contact layer contacting the second conductive type semiconductor layer, and the second type contact layer comprises an ohmic contact layer, the ohmic contact layer being composed of a plurality of islands,
wherein the first type electrode comprises a first type contact layer contacting the first conductive type semiconductor layer and a first type barrier layer at least partially covering the first type contact layer, and
wherein the first type contact layer fills the at least one opening and is not disposed on the lower surface of the second conductive type semiconductor layer.

US Pat. No. 9,972,739

LIGHT DETECTION DEVICE

Seoul Viosys Co., Ltd., ...

1. A method of forming a light detection device, the method comprising:forming a non-porous layer on a substrate;
forming a light absorption layer of the light detection device on the non-porous layer, the light absorption layer being configured to absorb light and comprising pores formed in a surface of the light absorption layer;
forming a Schottky layer on the surface of the light absorption layer and in the pores of the light absorption layer; and
forming a first electrode layer on the Schottky layer.

US Pat. No. 9,847,456

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a base;
a light emitting structure disposed over the base;
at least one first electrode disposed over the light emitting structure; and
a second electrode disposed under the light emitting structure and including a top surface and a bottom surface and a side
surface connecting the top surface and the bottom surface;

wherein at least a portion of the side surface of the second electrode is covered by the base, and the base includes a supporting
insulator and at least one bulk electrode embedded in the supporting insulator and electrically connected to the light emitting
structure, and

wherein a surface of the at least one bulk electrode is exposed through the supporting insulator.

US Pat. No. 9,832,986

INSECT TRAP USING UV LED LAMP

Seoul Viosys Co., Ltd., ...

1. An insect trap comprising:
a UV LED lamp including a printed circuit board (PCB) that has a UV LED chip; and
a trapping portion provided near the installing portion,
wherein the UV LED chip includes:
an n-type contact layer;
a p-type contact layer; and
an active region located between the n-type contact layer and the p-type contact layer and including barrier layers,
wherein the barrier layers include AlInGaN or AlGaN and the UV light emitted from the chip of the UV LED lamp is directed
upwardly or laterally from the insect trap.

US Pat. No. 9,793,440

LIGHT EMITTING DIODE HAVING ELECTRODE PADS

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a substrate;
a first conductive type semiconductor layer arranged on the substrate;
a mesa arranged on the first conductive type semiconductor layer and comprising a second conductive type semiconductor layer
and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;

a transparent electrode disposed on and in contact with the second conductive type semiconductor layer;
a first electrode pad electrically connected to the first conductive type semiconductor layer;
an insulation layer covering the transparent electrode layer and an upper surface and side surfaces of the mesa, the insulation
layer comprising an opening disposed above the transparent electrode layer;

a second electrode pad disposed on the insulation layer;
an upper extension disposed on and contacting the transparent electrode layer; and
a connector connecting the second electrode pad to the upper extension,
wherein the side surfaces of the mesa have a degree of inclination in the range of 30-70 degrees relative to a plane of the
substrate.

US Pat. No. 9,786,805

SEMICONDUCTOR ULTRAVIOLET (UV)PHOTO-DETECTING DEVICE

Seoul Viosys Co., Ltd., ...

1. An ultraviolet photo-detecting device, comprising:
a substrate;
a first nitride layer disposed on the substrate;
a second nitride layer disposed between the first nitride layer and the substrate;
a light absorption layer disposed on the first nitride layer;
a low-current blocking layer interposed between the light absorption layer and the first nitride layer, the low-current blocking
layer comprising a multiplayer structure; and

a Schottky junction layer disposed on the light absorption layer.

US Pat. No. 9,768,362

LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode package comprising:
a frame portion comprising a chip-mounting region defined in an upper portion thereof, and first and second frames spaced
apart from each other;

a light-emitting diode mounted on at least a portion of the chip-mounting region with a bonding layer interposed therebetween;
and

a first bonding aid layer formed between the bonding layer and the frame portion,
wherein the frame portion comprises a depressed portion formed on an upper surface thereof, and the depressed portion comprises
the chip-mounting region defined on a bottom thereof,

wherein the depressed portion comprises a step portion formed at an outer upper end thereof, and
wherein the step portion comprises a second bonding aid layer formed on an upper surface thereof.

US Pat. No. 9,755,106

LIGHT EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a substrate having a patterned surface;
a light emitting structure disposed over the patterned surface of the substrate and comprising a first semiconductor layer,
an active layer, and a second semiconductor layer;

a first electrode pad electrically connected to the first semiconductor layer;
a second electrode pad disposed over the substrate;
an insulating reflective layer covering a portion of the light emitting structure, the insulating reflective layer disposed
under the second electrode pad;

a lower extension connected to the first electrode pad, the lower extension configured to extend toward the second electrode
pad; and

two upper extensions connected to the second electrode pad, the two upper extensions electrically connected to the second
semiconductor layer,

wherein the second semiconductor layer and active layer are arranged to form two light emitting areas spaced apart from each
other,

wherein the two upper extensions connected to the second electrode pad are disposed over both of the two light emitting areas;
and

wherein the first electrode pad and the lower extension are disposed between the two light emitting areas.

US Pat. No. 9,653,018

LIGHT-EMITTING DIODE DRIVING DEVICE, DRIVING METHOD AND LIGHT-EMITTING DIODE LIGHTING MODULE COMPRISING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode (LED) driving device comprising:
a power source supplying alternating current (AC) voltage;
a rectification unit communicatively coupled to the power source and rectifying the AC voltage supplied from the power source;
a driving signal generator configured to receive the rectified voltage from the rectification unit and generate a primary
driving signal using the rectified voltage;

an LED driving signal modulation unit communicatively coupled to the driving signal generator, the LED driving signal modulation
unit configured to receive the primary driving signal and generating a secondary pulse driving signal through a modulation
of the primary driving signal;

a plurality of LED groups including LEDs and configured to receive the primary driving signal or the second pulse driving
signal such that the LED groups operate responsive to the primary driving signal or the secondary pulse driving signal; and

a selector communicatively coupled to the driving signal generator and the LED driving signal modulation unit, the selector
configured to receive the primary driving signal and the secondary pulse driving signal and output only one of the primary
driving signal and the secondary pulse driving signal to the LED groups, wherein at least one LED group from the plurality
of LED groups is configured to repeatedly turn on and turn off in responsive to transitions of the secondary pulse driving
signal between a low level and a high level.

US Pat. No. 9,590,144

LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a substrate;
a light emitting structure disposed on one surface of the substrate; and
a transflective portion disposed on the other surface of the substrate,
wherein the transflective portion and the substrate have different indexes of refraction from one another.

US Pat. No. 9,218,967

METHOD FOR SEPARATING EPITAXIAL LAYER FROM GROWTH SUBSTRATE

Seoul Viosys Co., Ltd., ...

1. A method for separating an epitaxial layer from a growth substrate, the method comprising:
growing an epitaxial layer on a growth substrate, the epitaxial layer comprising:
growing a doped semiconductor layer on the growth substrate; and
growing an undoped semiconductor layer on the doped semiconductor layer;
forming a notch in an edge of the epitaxial layer, wherein the notch is formed by selectively etching the doped semiconductor
layer after forming the undoped semiconductor layer;

forming a bonding layer on the epitaxial layer, disposing a bonding substrate on the bonding layer, and then heating the bonding
layer to a bonding temperature to join the epitaxial layer and the bonding substrate;

cooling the bonding layer after heating the bonding layer, so that the epitaxial layer and the bonding substrate are joined
by the bonding layer; and

separating the epitaxial layer from the growth substrate,
wherein separating the epitaxial layer from the growth substrate comprises first separating the epitaxial layer starting at
the notch.

US Pat. No. 9,093,617

AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME

Seoul Viosys Co., Ltd., ...

1. An alternating current (AC) light emitting device, comprising:
a first light emitting diode chip;
a second light emitting diode chip, each of the first light emitting diode chip and the second light emitting diode chip comprising
light emitting cells;

a first long-persistent phosphor disposed on the first light emitting diode chip and configured to change a wavelength of
light emitted from the first light emitting diode chip;

a second long-persistent phosphor disposed on the second light emitting diode chip and configured to change a wavelength of
light emitted from the second light emitting diode chip;

a first lead terminal; and
a second lead terminal,
wherein the first light emitting diode chip on which the first phosphor is disposed and the second light emitting diode chip
on which the second phosphor is disposed are configured to be driven together by a single AC power electrically connected
to the first and second lead terminals,

wherein a first afterglow luminescence period of the second long-persistent phosphor is different from a second afterglow
luminance period of the first long-persistent phosphor,

wherein the first long-persistent phosphor and the second long-persistent phosphor for a comprise different materials, and
wherein the amount of the second long-persistent phosphor is different than the amount of the first long-persistent phosphor.

US Pat. No. 10,103,305

HIGH EFFICIENCY LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:a nitride-based semiconductor stack comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a first electrode electrically connected to the first conductive type semiconductor layer and a second electrode disposed on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;
a first pad electrode and a second pad electrode electrically connected to the first electrode and the second electrode, respectively;
a substrate comprising a first connection pad and a second connection pad electrically connected to the first pad electrode and the second pad electrode, respectively; and
a solder interposed between the first pad electrode and the first connection pad and between the second pad electrode and the second connection pad,
wherein the first pad electrode is disposed to face the first connection pad and the second pad electrode is disposed to face the second connection pad,
wherein the first pad electrode comprises a pad electrode groove,
wherein the first connection pad comprises a connection pad groove, and
wherein at least part of the solder is disposed in the pad electrode groove and the connection pad groove,
wherein the second pad comprises a pad electrode groove, and
wherein the pad electrode groove of the second pad electrode is disposed so as to not overlap a first contact region defined as an area where the second electrode contacts the second pad electrode in a vertical direction.

US Pat. No. 10,090,450

LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:a light emitting structure including a first conductive type semiconductor layer on a first side of the light emitting structure, a second conductive type semiconductor layer on a second side opposing the first side of the light emitting structure, and an active layer disposed between the first conductive type semiconductor and the second conductive type semiconductor layer operable to emit light in response to an electrical current through the first and second type semiconductor layers, wherein the light emitting structure being patterned to include exposure regions of different sizes at different locations that penetrate through the second conductive type semiconductor layer and the active layer to expose the first conductive type semiconductor layer to the second side of the light emitting structure;
a first electrode formed on the second side of the first conductive type semiconductor layer to include different first electrode segments electrically connected to one another such that some of the first electrode segments are filled in the exposure regions to be electrically coupled to the first conductive type semiconductor layer to conduct the electrical current and some of the first electrode segments are on the second side of the light emitting structure;
a first electrically conductive pad electrically coupled to the first electrode to conduct the electrical current through the first conductive type semiconductor layer;
a second electrode formed on the second side of the second conductive type semiconductor layer and electrically coupled to the second conductive type semiconductor layer to conduct the electrical current through the second conductive type semiconductor layer;
a second electrically conductive pad electrically coupled to the second electrode to conduct the electrical current through the second conductive type semiconductor layer;
a first insulation layer structured to include (1) first insulation layer segments located between the first electrode and the light emitting structure and between the first and second electrodes, (2) first openings at the exposure regions of the light emitting structure to provide electrical coupling between the first electrode and the first conductive type semiconductor layer, and (3) second openings to provide electrical coupling between the second electrode and the second conductive type semiconductor layer; and
a second insulation layer structured to include (1) second insulation layer segments located between the second pad and the first electrode and between the first pad and the first electrode, (2) first openings to provide electrical coupling between the second pad and the second electrode, and (3) second openings to provide electrical coupling between the first pad and the first electrode.

US Pat. No. 10,062,810

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer interposed between the first semiconductor layer and the second semiconductor layer and operable to emit light in response to an electrical current through the first and second semiconductor layers, the semiconductor stack located between a first side and a second side of the semiconductor stack that are on opposite sides of the semiconductor stack;
an insulation layer formed over the semiconductor stack and structured to include a first opening and a second opening formed on different portions of the semiconductor stack;
a first electrode pad disposed on the semiconductor stack and electrically contacts with the first semiconductor layer through the first opening of the first semiconductor layer;
a second electrode pad disposed on the semiconductor stack and electrically contacts with the second semiconductor layer through the second opening of the second semiconductor layer; and
a solder paste disposed to cover the first electrode pad and the second electrode pad and contacting the insulation layer, the solder paste including portions formed on the first electrode pad and the second electrode pad to provide electrical connections for the electrical current to flow to the light emitting structure.

US Pat. No. 9,978,910

LIGHT-EMITTING DIODE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode with an improved light extraction efficiency, comprising:a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer which are formed on a substrate;
an N-type electrode formed on the N-layer;
a P-type electrode formed on the P-layer;
a reflective electrode layer formed over the N-type electrode and the P-type electrode and configured to reflect light on the dispersion electrodes of the N-type electrode and the P-type electrode; and
a reflective layer formed between the N-layer and the N-type electrode and between the P-layer and the P-type electrode, and
wherein the reflective layer is patterned to form a roughness on a surface thereof.

US Pat. No. 9,865,775

LIGHT EMITTING ELEMENT

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a first conductive type semiconductor layer;
a mesa disposed on the first conductive type semiconductor layer and comprising an active layer and a second conductive type
semiconductor layer disposed on the active layer;

a current blocking layer partially disposed on the mesa;
a transparent electrode disposed on the mesa and at least partially covering the current blocking layer;
a first electrode insulated from the second conductive type semiconductor layer, and comprising a first electrode pad and
a first electrode extension portion extending from the first electrode pad;

a second electrode disposed on the current blocking layer to be electrically connected to the transparent electrode, and comprising
a second electrode pad and a second electrode extension portion extending from the second electrode pad; and

an insulation layer partially disposed in a region under the first electrode,
wherein the current blocking layer comprises a pad-current blocking layer disposed under the second electrode pad,
wherein the transparent electrode comprises a first opening disposed on the pad-current blocking layer and a second opening
exposing the second conductive type semiconductor layer and disposed in the first opening, the second electrode contacting
the second conductive type semiconductor layer through the second opening, and an upper surface of the second electrode comprises
a first depression disposed to correspond to the first opening and a second depression disposed to correspond to the second
opening.

US Pat. No. 9,859,466

LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode module comprising:
a substrate; and
a light emitting diode disposed on the substrate and comprising:
a first conductive-type semiconductor layer;
mesas placed on the first conductive-type semiconductor layer, each mesa including an active layer and a second conductive-type
semiconductor layer;

a first electrode pad disposed on the mesas and electrically connected to the first conductive-type semiconductor layer above
each mesa, the first electrode pad including a first portion and a second portion that are electrically connected to corresponding
portions of the first conductive-type semiconductor layer;

a second electrode pad disposed on the mesas and electrically connected to the second conductive-type semiconductor layer,
and wherein the light emitting diode module further comprises:

a wavelength converter covering a surface of the substrate.

US Pat. No. 9,859,469

LIGHT EMITTING DIODE FOR SURFACE MOUNT TECHNOLOGY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING LIGHT EMITTING DIODE MODULE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED), comprising:
a substrate;
a first semiconductor layer disposed on the substrate;
an active layer disposed on a portion of the first semiconductor layer;
a second semiconductor layer disposed on the active layer;
a first conductive layer disposed on a portion of the first semiconductor layer;
a second conductive layer disposed on the second semiconductor layer; and
an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the second conductive layer,
wherein:
the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness;
and

the thickness of the first region varies along a direction extending across the second semiconductor layer.

US Pat. No. 9,787,113

CHARGING APPARATUS FOR MOBILE DEVICE AND MULTI-STATION CHARGING APPARATUS USING THE SAME

Seoul Viosys Co., Ltd., ...

1. A charging apparatus for charging a mobile device, the charging apparatus comprising:
a charging apparatus case including a slot structured to receive a mobile device into the slot, wherein front and rear surfaces
of the mobile device are exposed to inner walls of the slot;

at least one UV light source disposed on at least one of the inner walls of the slot and configured to irradiate UV light
onto the front and rear surfaces of the mobile device, which are exposed to the inner walls of the slot; and

a slide dock moveable between:
a first position in which a charging terminal on the slide dock is inside the charging apparatus case and accessible to the
mobile device by insertion of the mobile device in the slot, and

a second position in which the charging terminal on the slide dock is outside the charging apparatus case and not accessible
to the mobile device by insertion of the mobile device in the slot.

US Pat. No. 9,773,949

LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a light emitting diode chip, the method comprising: forming a light emitting structure on a first
surface of a substrate, the light emitting structure comprising:
a first conductive-type semiconductor layer;
a second conductive-type semiconductor layer; and
an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor
layer;

removing a portion of the substrate by grinding a second surface of the substrate;
after the grinding, reducing the surface roughness of the second surface of the substrate by lapping the substrate; and
forming a distributed Bragg reflector on the second surface of the substrate to reflect light emitted from the light emitting
structure; wherein: the distributed Bragg reflector comprises a reflectivity of at least 90% for light of a first wavelength
in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a
red wavelength range; and the distributed Bragg reflector has a reflectivity of at least 90% for light in a full wavelength
range of 400 to 700 nm.

US Pat. No. 9,728,698

LIGHT EMITTING DEVICE PACKAGE HAVING IMPROVED HEAT DISSIPATION EFFICIENCY

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
a substrate including a base and a conductive pattern disposed over the base; and
a light emitting diode mounted on the substrate,
wherein the light emitting diode includes:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer
disposed under the first conductive type semiconductor layer, and an active layer disposed between the first conductive type
semiconductor layer and the second conductive type semiconductor layer, wherein the light emitting structure is disposed to
form openings exposing a corresponding portion of the first conductive type semiconductor layer;

a first electrode forming ohmic contact with the first conductive type semiconductor layer through the exposed portion of
the first conductive type semiconductor layer;

a second electrode disposed under the second conductive type semiconductor layer and forming ohmic contact with the second
conductive type semiconductor layer;

a first insulation layer partially covering the first electrode and the second electrode;
a first bump and a second bump disposed under the light emitting structure and electrically connected to the first electrode
and the second electrode, respectively through the conductive pattern; and

a heat dissipation bump disposed under the light emitting structure and above the substrate and contacting the base,
wherein at least one of the openings formed on the light emitting structure is disposed to form a connection structure connecting
at least two other of the openings,

the first bump, the second bump and the heat dissipation bump are separated from one another,
the heat dissipation bump has higher thermal conductivity than the first and second bumps, and
wherein the conductive pattern includes a first conductive pattern electrically connected to the first bump and a second conductive
pattern electrically connected the second bump, and the base includes a protrusion disposed between the first and second conductive
patterns.

US Pat. No. 9,716,210

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
an n-type contact layer;
a p-type contact layer disposed over the n-type contact layer;
an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well
structure including a quantum well layer that includes a composition ratio of Indium (In) and a barrier layer;

a superlattice layer including a plurality of layers, disposed near the active region; and
a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having
a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer.

US Pat. No. 9,664,607

PORTABLE APPARATUS FOR ESTIMATING AIR QUALITY AND METHODS OF OPERATING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A portable apparatus for estimating air quality, the portable apparatus comprising:
a light source configured to emit incident light having a predetermined wavelength toward air, the emitted incident light
is scattered by particles in the air to generate scattered light;

a light detector configured to detect the scattered light and collect information on the scattered light; and
a calculator configured to analyze the collected information on the scattered light from the light detector and to provide
air quality indicator information including a size and a concentration of the particles in the air;

wherein the calculator is configured to perform an arithmetic operation using an equation including variables “r”, “?”, “n0” and “?”,

wherein the variable “r” represents a mean value of distances between the particles and the light detector, the variable “?”
represents a wavelength of the scattered light, the variable “n0” represents a refractive index of the air in a target space including the particles, and the variable “?” represents an angle
between the incident light and the scattered light,

wherein the equation includes a first scattered light detection equation and a second scattered light detection equation;
wherein the first scattered light detection equation is expressed by the following equation:

wherein the second scattered light detection equation is expressed by the following equation:

wherein, “I” represents intensity of the scattered light, “I0” represents intensity of the incident light, “a” represents a diameter of the particles, “?” represents a volume percentage
of the particles in the target space, “?” represents a correlation term “kB” represents a Boltzmann constant, “?” represents an intrinsic viscosity of the air in the target space, “?” represents a
step time, “g(?,?)” represents an autocorrelation function, “D” represents a diffusion coefficient of the particles in the
target space, and “T” represents an absolute temperature of the air in the target space.

US Pat. No. 9,577,157

LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode package, comprising:
a body and leads, the body comprising a mounting surface;
a light-emitting structure disposed on the mounting surface, the light-emitting structure comprising an active layer disposed
between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer;

a phosphor member disposed on the light-emitting structure; and
a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface,
wherein the distributed Bragg reflector comprises a first distributed Bragg reflector and a second distributed Bragg reflector;
and

wherein an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness
of material layers within the second distributed Bragg reflector.

US Pat. No. 9,533,896

FLUID STERILIZER AND ASSOCIATED CONNECTING DEVICE

SEOUL VIOSYS CO., LTD., ...

1. A sterilizer for sterilizing a liquid, comprising:
a first pipe having a closed end and an opposite, open end;
a second pipe disposed in the first pipe and having a light transmitting property to transmit ultraviolet (UV) light; and
a plurality of UV LEDs engaged to and arranged in the first pipe and configured to provide UV light to a fluid flowing through
the inside of the second pipe or the space between the first and second pipes to cause sterilization of the fluid, wherein
the plurality of UV LEDs are arranged in a zigzag pattern on the inner wall of the first pipe in consideration of beam angles
of UV beams emitted by the UV LEDs in order to provide desired UV illumination coverage within the second pipe, wherein the
second pipe includes two or more inner pipes placed inside the second pipe.

US Pat. No. 9,337,175

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:
a bonding substrate;
a second insulating layer disposed on the bonding substrate;
light-emitting diode (LED) cells disposed on the second insulating layer, each LED cell comprising:
a first semiconductor layer;
an active layer disposed on the first semiconductor layer; and
a second semiconductor layer disposed on the active layer;
a bonding metal layer disposed between the LED cells and the bonding substrate and bonding the LED cells to the bonding substrate;
a wire disposed on the bonding metal layer opposite to the bonding substrate and serially connecting the LED cells;
a first electrode pad disposed between the bonding substrate and a lower surface of the first semiconductor layer, and spaced
apart from a light emission surface of the LED cells; and

a second electrode pad disposed on a lower surface of the second semiconductor layer and spaced apart from the light emission
surface of the LED cells,

wherein the wire is disposed between the LED cells and the second insulating layer,
wherein the light emission surface is an upper surface of the second semiconductor layer, and
wherein the lower surface of the second semiconductor layer is disposed opposite the upper surface of the second semiconductor
layer.

US Pat. No. 9,947,849

LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
first and second contact electrodes disposed over the light emitting structure, the first and second contact electrodes being in ohmic-contact with the first and second conductive type semiconductor layers, respectively;
an insulating layer insulating the first and second contact electrodes from each other and at least partially covering the first and second contact electrodes; and
first and second electrodes disposed over the light emitting structure, the first and second electrodes electrically connected to the first and second contact electrodes, respectively,
wherein each of the first and second electrodes has a boundary such that a portion of the boundary of the first electrode faces a portion of the boundary of the second electrode; and the portion of the boundary of the first electrode or the portion of the boundary of the second electrode comprises a curved shape along the boundary,
wherein the light emitting device further comprises an insulation support disposed under the first and second electrodes to provide coupling regions for the first electrode and the second electrode, and
wherein the insulation support has a portion with a curved shape corresponding to the curved shape of the at least one of the first electrode or the second electrode.

US Pat. No. 9,905,728

VERTICAL ULTRAVIOLET LIGHT EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A UV light emitting device comprising:
a substrate;
an n-type semiconductor layer disposed on the substrate;
an active layer disposed on the n-type semiconductor layer;
a hole injection layer disposed on the active layer and comprising Al;
an Al-delta layer disposed on the hole injection layer and comprising Al; and
a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than
the hole injection layer,

wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type
contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher
Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

US Pat. No. 9,905,729

LIGHT EMITTING DIODE

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a substrate having a rectangular shape elongated in one direction;
a light emitting structure comprising a first conductive type semiconductor layer disposed on the substrate, a second conductive
type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between
the first conductive type semiconductor layer and the second conductive type semiconductor layer, the light emitting structure
having an opening formed through the second conductive type semiconductor layer and the active layer to expose the first conductive
type semiconductor layer;

a first electrode pad disposed on the first conductive type semiconductor layer in the opening to be closer to a first corner
of the substrate than other corners thereof;

a second electrode pad disposed on the second conductive type semiconductor layer to be relatively close to a second corner
of the substrate that faces the first corner;

a first extension extending from the first electrode pad and including a first curved section extending from the first electrode
pad; and

a second extension and a third extension extending from the second electrode pad to both sides of the first extension and
including a second curved section and a third curved section at end portions of the second extension and the third extension,
respectively, the second curved section and the third curved section having lengths different from each other and greater
than that of the first curved section,

wherein an imaginary line connecting a distal end of the second extension to a distal end of the third extension is placed
between the first electrode pad and the first corner, a center of the first electrode pad is spaced apart from a longitudinal
central axis of the light emitting structure, and a distance from the center of the first electrode pad to the longitudinal
central axis is smaller than a diameter of the first electrode pad and greater than or equal to a radius thereof.

US Pat. No. 9,905,732

UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A UV light emitting diode comprising:
a support substrate;
a p-type semiconductor layer disposed over the support substrate;
an active layer disposed over the p-type semiconductor layer; and
an n-type semiconductor layer disposed over the active layer,
wherein the n-type semiconductor layer comprises a first n-type semiconductor layer having a portion with band gap energy
continuously changing along a thickness direction of the n-type semiconductor layer.

US Pat. No. 9,847,458

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer
disposed on the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive
type semiconductor layers, and having at least one hole formed through the second conductive type semiconductor layer and
the active layer to expose the first conductive type semiconductor layer therethrough;

a first electrode forming ohmic contact with the first conductive type semiconductor layer through the at least one hole of
the light emitting structure;

a current spreading layer disposed on the second conductive type semiconductor layer and forming ohmic contact with the second
conductive type semiconductor layer, the current spreading layer including a lower current spreading layer and an upper current
spreading layer disposed on the lower current spreading layer, wherein the lower current spreading layer is disposed closer
to the second conductive type semiconductor layer than is the upper current spreading layer;

a second electrode disposed on the current spreading layer;
an insulation layer covering the light emitting structure and the current spreading layer, and including openings partially
exposing the first and second electrodes; and

a first pad and a second pad disposed on the insulation layer and electrically connected to the first and second electrodes,
respectively,

wherein the upper current spreading layer and the lower current spreading layer have different electrical conductivities,
wherein the at least one hole includes a first hole disposed under the first pad and a second hole including a portion disposed
under the first pad and a portion disposed under a gap between the first pad and the second pad, and

wherein the upper current spreading layer has a higher transmittance and a lower sheet resistance than the lower current spreading
layer.

US Pat. No. 9,831,401

LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) comprising:
a substrate;
a stacked structure including a first semiconductor layer, an active layer formed over the first semiconductor layer and a
second semiconductor layer formed over the active layer;

a first conductive layer formed over the stacked structure to cover an outer side wall of the stacked structure;
a first insulating layer formed between the stacked structure and the first conductive layer to prevent the first conductive
layer from contacting the outer side wall of the stacked structure;

a first pad formed over the stacked structure; and
a second pad formed over the stacked structure,
wherein the first conductive layer is in ohmic-contact with a portion of the first semiconductor layer, the portion of the
first semiconductor layer is outside of the outer side wall of the stacked structure.

US Pat. No. 9,761,762

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:
a substrate;
a nitride light emitting structure disposed on the substrate; and
a transparent electrode layer disposed on the nitride light emitting structure and including a first portion including a plurality
of protrusions and a second portion without any protrusions, wherein each of the plurality of protrusions has a lower portion
and an upper portion, and

a side of the lower portion and a side of the upper portion have different gradients.

US Pat. No. 9,727,192

TOUCH DISPLAY DEVICE AND DRIVING METHOD THEREOF

Seoul Viosys Co., Ltd., ...

1. A touch display device, comprising:
a plurality of first sensing electrodes;
a plurality of second sensing electrodes forming a mutual capacitance with the first sensing electrodes;
an oscillation circuit connected with the plurality of second sensing electrodes and configured to supply energy so as to
generate a first sinusoidal wave signal and a second sinusoidal wave signal corresponding to the first sinusoidal wave signal;

a first electrode plate forming a parasitic capacitance with the first and second sensing electrodes and configured to receive
the second sinusoidal wave signal; and

a scanning driver configured to:
sequentially select the first sensing electrodes;
apply a reference voltage to the selected first sensing electrode; and
float the first sensing electrodes which are not selected.

US Pat. No. 9,647,180

GLASS-PHOSPHOR COMPOSITE CONTAINING RARE-EARTH ION AND LIGHT-EMITTING DIODE INCLUDING SAME

SEOUL VIOSYS CO., LTD., ...

8. A method of manufacturing a glass-phosphor composite, comprising:
preparing rare earth ion-containing parent glass;
mixing the rare earth ion-containing parent glass in a powder state with a phosphor in a powder state; and
providing a glass-phosphor composite using the powder mixture of the rare earth ion-containing parent glass and the phosphor,
wherein the mixing includes mixing the rare earth ion-containing parent glass in the powder state with the phosphor in the
powder state so that the phosphor in the glass-phosphor composite is in an amount of 5 wt % to 30 wt %, and

wherein the preparing includes using a glass frit having a glass transition point of 300° C. to 800° C. and a sintering temperature
of 200° C. to 600° C., wherein the phosphor comprises a phosphor material represented by a molecular formula of (YA)3(AlB)5O12:(RE)3+, wherein A comprises lanthanides and at least one metal element of Tb, Sr, Ca, Ba, Mg or Zn, B comprises at least one element
of Si, B, P or Ga, and RE represents a lanthanide rare earth metal.

US Pat. No. 9,640,719

LIGHT EMITTING DIODE, METHOD OF FABRICATING THE SAME AND LED MODULE HAVING THE SAME

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode comprising:
a first conductive-type semiconductor layer;
a second conductive-type semiconductor layer;
an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor
layer;

a current spreading layer electrically connected to the first conductive-type semiconductor layer and having a first leading
end;

an anti-diffusion reinforcing layer electrically connected to the second conductive-type semiconductor layer and having a
second leading end; and

a spark gap formed between the first leading end of the current spreading layer and the second leading end of the anti-diffusion
reinforcing layer.

US Pat. No. 9,634,061

LIGHT EMITTING DIODE

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode, comprising:
a first light emitting cell disposed on a substrate;
a second light emitting cell disposed on the substrate, the second light emitting cell separated from the first light emitting
cell;

a first electrode layer electrically connected to the first light emitting cell;
a first insulation layer disposed on and covering the first and second light emitting cells, the first insulation layer comprising
a first opening on the first light emitting cell;

an interconnection electrically connected to the first light emitting cell and the second light emitting cell, the interconnection
comprising:

a first portion and a second portion disposed on opposite sides of the second light emitting cell such that the first and
second portions face each other and electrically contact the second light emitting cell;

a third portion disposed on the first light emitting cell and electrically contacting the first light emitting cell; and
a fourth portion disposed between the first and second light emitting cells and electrically connecting the third portion
to the first and second portions.

US Pat. No. 9,634,193

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light-emitting diode, comprising:
a substrate;
a first semiconductor layer disposed on the substrate;
an active layer disposed on the first semiconductor layer;
a second semiconductor layer disposed on the active layer and having a conductivity type different than that of the first
semiconductor layer;

a reflective metal layer disposed on the second semiconductor layer;
a stress relief layer disposed directly on the reflective metal layer;
a conductive barrier layer disposed on the stress relief layer such that the conductive barrier layer directly contacts the
second semiconductor layer and covers a side surface of the reflective metal layer and the stress relief layer;

a lower insulation layer disposed on the conductive barrier layer, and comprising a first opening that exposes a top portion
of the conductive barrier layer and a second opening that exposes a portion of the first semiconductor layer; and

an upper insulation layer disposed on the lower insulation layer, and comprising a first opening that is wider than the first
opening of the lower insulation layer and that exposes the top portion of the conductive barrier layer exposed by the first
opening of the lower insulation layer,

wherein the stress relief layer is disposed between the reflective metal layer and the conductive barrier layer, and is configured
to absorb stress caused by differences in the coefficient of thermal expansion of the reflective metal layer and the conductive
barrier layer.

US Pat. No. 9,577,144

ULTRAVIOLET LIGHT-EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
an n-type contact layer including a GaN layer;
a p-type contact layer including an AlGaN layer or an AlInGaN layer; and
an active region having a multiple quantum well structure disposed between the n-type contact layer and the p-type contact
layer,

wherein the active region includes a well layer including GaN or InGaN, the well layers having a thickness less than 2 nm
and radiates ultraviolet light having a peak wavelength in the range of 340 nm to 360 nm, and

wherein additional ultraviolet light having a peak wavelength in the range of 360 nm to 400 nm is further radiated.

US Pat. No. 9,537,045

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a semiconductor device, the method comprising:
forming an insulation pattern comprising a mask region and an open region on a gallium nitride substrate;
growing gallium nitride semiconductor layers from the open region exposing the gallium nitride substrate to cover the insulation
pattern by epitaxial lateral overgrowth (ELOG); and

patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of
semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.

US Pat. No. 9,520,536

LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD

SEOUL VIOSYS CO., LTD., ...

1. A light emitting diode device comprising:
a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer
located over the first conductive-type semiconductor layer, and an active layer interposed between the first conductive-type
semiconductor layer and the second conductive-type semiconductor layer;

a transparent conductive layer formed over the second conductive-type semiconductor layer;
a second electrode pad formed over the transparent conductive layer;
a second electrode extension extending from the second electrode pad; and
a current blocking layer interposed between the transparent conductive layer and the second conductive-type semiconductor
layer,

wherein the transparent conductive layer has an opening exposing at least a portion of the current blocking layer, and the
second electrode extension includes a first portion electrically connected to the transparent conductive layer and a second
portion electrically insulated from the transparent conductive layer.

US Pat. No. 10,172,190

LIGHT EMITTING DIODE HAVING IMPROVED CURRENT SPREADING EFFICIENCY, IMPROVED MECHANICAL RELIABILITY, OR SOME COMBINATION THEREOF

Seoul Viosys Co., Ltd., ...

1. A light emitting diode, comprising:a light emitting structure comprising a first conductivity type semiconductor layer and a plurality of mesas comprising a second conductivity type semiconductor layer disposed on the first conductivity type semiconductor layer and an active layer interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the first conductivity type semiconductor layer comprising an exposed region between the plurality of mesas;
a first electrode disposed on the first conductivity type semiconductor layer and electrically connected to the first conductivity type semiconductor layer;
a current blocking layer disposed on a portion of the plurality of mesas and a portion of the exposed region;
a transparent electrode layer disposed on a portion of the plurality of mesas and a portion of the exposed region, the transparent electrode layer partially covering the second conductivity type semiconductor layer and the current blocking layer; and
a second electrode disposed on the current blocking layer and the transparent electrode layer and electrically connected to the second conductivity type semiconductor layer,
wherein the current blocking layer comprises a connecting portion extending from a first mesa of the plurality of mesas to a second mesa of the plurality of mesas adjacent to the first mesa, and a protruding portion protruding from the connecting portion and disposed on the exposed region.

US Pat. No. 10,003,039

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a first electrode electrically connected to the first conductive type semiconductor layer;
a second electrode disposed on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer;
a lower insulation layer covering an upper surface of the light emitting structure and an upper and side surfaces of the second electrode, the lower insulation layer being disposed between the light emitting structure and the first electrode and insulating the first electrode from the second electrode;
an upper insulation layer covering a portion of the first electrode;
a first metal bulk and a second metal bulk separated from each other, disposed on the upper insulation layer, and electrically connected to the first electrode and the second electrode, respectively; and
an insulation portion disposed between the first metal bulk and the second metal bulk,
wherein a difference in coefficients of thermal expansion represented by Equation 1 is 20% or less, and
wherein Equation 1 is as follows
the difference in the coefficients of thermal expansion=[(a coefficient of thermal expansion of the first metal bulk or a coefficient of thermal expansion of the second metal bulk?a coefficient of thermal expansion of the light emitting structure)/the coefficient of thermal expansion of the first metal bulk or the second metal bulk]×100.  (Equation 1)

US Pat. No. 9,997,669

HIGH POWER LIGHT EMITTING DEVICE AND METHOD OF MAKING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting device, comprising:a substrate including a first lead and a second lead;
a light emitting diode disposed over the first lead of the substrate, the light emitting diode including a light emitting structure including an active layer, a first conductive-type semiconductor layer disposed over the active layer, and a second conductive type semiconductor layer, the active layer disposed over the second conductive-type semiconductor layer, wherein the light emitting diode is configured to emit near ultraviolet light; and
a wavelength conversion unit disposed over the light emitting diode,
wherein the light emitting diode includes:
at least one groove formed in the light emitting structure and exposing a portion of the first conductive-type semiconductor layer;
a first electrode disposed under the light emitting structure and electrically connected to the first conductive-type semiconductor layer exposed by the at least one groove; and
a second electrode disposed under a lower surface of the second conductive-type semiconductor layer and at least partially covered by the second conductive-type semiconductor layer, and
wherein the light emitting diode has a semi-polar or non-polar growth surface,
the wavelength conversion unit includes a multi-layered structure including a first phosphor layer and a second phosphor layer disposed over the first phosphor layer, and
the light emitting diode is configured to be driven at a current density equal to or greater than 350 mA/mm2.

US Pat. No. 9,966,497

METHOD OF FABRICATING NONPOLAR GALLIUM NITRIDE-BASED SEMICONDUCTOR LAYER, NONPOLAR SEMICONDUCTOR DEVICE, AND METHOD OF FABRICATING THE SAME

Seoul Viosys Co., Ltd., ...

1. A method of fabricating a nonpolar gallium nitride semiconductor device using metal organic chemical vapor deposition, the method comprising:growing an intermediate-temperature buffer layer over a nonpolar gallium nitride substrate at a growth temperature of a range from 700° C. to 800° C.;
growing a gallium nitride based first semiconductor layer over the intermediate-temperature buffer layer at a growth temperature above 900° C., wherein the first semiconductor layer is n-typed semiconductor layer;
forming an active layer over the first semiconductor layer; and
forming a second semiconductor layer over the active layer, wherein the second semiconductor layer is p-typed semiconductor layer;
wherein the active layer includes a structure in which barrier layers and well layers are alternately laminated,
wherein the barrier layers include a plurality of first barrier layers each having a first thickness, a plurality of second barrier layers formed over the plurality of first barrier layers and having a second thickness, and a third barrier layer formed over the second barrier layers and having a third thickness, wherein the plurality of first barrier layers, the plurality of second barrier layers, and the third barrier layer are sequentially arranged along a direction from the first semiconductor layer to the second semiconductor layer such that the plurality of the first barrier layers are followed by the plurality of second barrier layers and the third barrier layer, and
wherein the third barrier layer is closer to the second semiconductor layer than the first barrier layer and the second barrier layer are and the third thickness is greater than the first thickness.

US Pat. No. 9,929,314

LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) device comprising:a substrate;
a light emitting structure disposed over the substrate and including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer;
a first electrode pad disposed over the first semiconductor layer;
a transparent electrode layer disposed over the second semiconductor layer;
a second electrode pad disposed over the transparent electrode layer;
a first extension extending from the first electrode pad; and
a second extension extending from the second electrode pad,
wherein the first extension includes first portions in contact with the first semiconductor layer and second portions not in contact with the first semiconductor layer, wherein one of the first portions and one of the second portions are alternately disposed along the first extension, and wherein the second extension includes a plurality of portions extending from the second electrode pad.

US Pat. No. 9,923,121

LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR

Seoul Viosys Co., Ltd., ...

1. A light emitting diode comprising:
a first conductive type semiconductor layer;
at least two light emitting units disposed on the first conductive type semiconductor layer to be spaced apart from each other,
each comprising an active layer, a second conductive type semiconductor layer, and at least one contact hole formed through
the second conductive type semiconductor layer and the active layer so as to expose a portion of the first conductive type
semiconductor layer;

an additional contact region disposed between the light emitting units and partially exposing the first conductive type semiconductor
layer;

a first electrode forming ohmic contact with the first conductive type semiconductor layer through the contact hole of each
light emitting unit and the additional contact region;

a second electrode disposed on each of the light emitting units and forming ohmic contact with the second conductive type
semiconductor layer; and

a lower insulation layer covering a side surface of the first conductive type semiconductor layer, the light emitting units,
and the second electrode,

wherein the lower insulation layer is shaped to include a first opening exposing the contact hole and the additional contact
region and a second opening partially exposing the second electrode, the first and second electrode being insulated from each
other.

US Pat. No. 9,911,898

ULTRAVIOLET LIGHT-EMITTING DEVICE

Seoul Viosys Co., Ltd., ...

1. A light emitting device comprising:
an n-type contact layer;
a p-type contact layer; and
an active region having a multiple quantum well structure disposed between the n-type contact layer and the p-type contact
layer,

wherein the light emitting device radiates ultraviolet light of a spectrum in a spectral range, the spectrum having a first
peak and a second peak and wherein the first peak is in the range of 340 nm to 360 nm and the second peak is in the range
of 360 nm to 400 nm.

US Pat. No. 9,912,790

STERILIZING APPARATUS FOR PORTABLE TERMINAL

Seoul Viosys Co., Ltd., ...

1. A sterilization apparatus for a portable terminal, comprising:
a casing configured to receive the portable terminal; and
an UltraViolet Light Emitting Diode (UV LED) provided in the casing to sterilize the portable terminal;
a retractable protrusion part located on a first side of the casing and having the UV LED on one side of the retractable protrusion
part the retractable protrusion part configured as protruded from the first side in a first state and inserted into the first
side in a second state and the UV LED emitting light from the one side of the retractable protrusion part toward the portable
terminal along a direction parallel to the portable terminal, and

wherein the casing comprises a second side covering a side of the portable terminal, and
the sterilization apparatus further comprises a reflection part configure to switching between a third state in which the
reflection part is in a roll form and received within the second side and a fourth state in which the reflection part covers
one surface of the portable terminal.

US Pat. No. 9,859,108

SUBSTRATE REGENERATION METHOD AND REGENERATED SUBSTRATE

Seoul Viosys Co., Ltd., ...

1. A substrate recycling method comprising:
preparing a substrate having a surface separated from an epitaxial layer such that the separated surface comprises a convex
portion and a concave portion, the convex portion being flatter than the concave portion;

growing a crystallinity restoring layer on the separated surface such that the crystallinity restoring layer is grown on the
convex portion and forms a first cavity on an upper portion of the concave portion; and

growing a surface roughness improving layer on the crystallinity restoring layer to have a continuous surface,
wherein the preparing of the substrate includes performing two stages of electrochemical etching (ECE) with different voltages
from each other to form a sacrificial layer.

US Pat. No. 9,855,351

STERILIZATION APPARATUS FOR PORTABLE ELECTRONIC DEVICE

Seoul Viosys Co., Ltd., ...

1. A sterilization apparatus for a portable electronic device, comprising:
a case having an opening receiving a portable electronic device and including a housing groove formed on one side of the case;
an ultraviolet (UV) irradiation unit arranged in the case, and configured to sterilize the portable electronic device by irradiating
UV light onto the portable electronic device;

a door connected to the case for opening and closing the opening of the case; and
a display unit connected to the portable electronic device, and including a screen configured to display an image outputted
from the portable electronic device, wherein the screen is shaped like a plate and is installed to be movable upward or downward
via a linear movement along the housing groove along a plane that comprises the screen.

US Pat. No. 9,793,441

LIGHT EMITTING DIODE MODULE FOR SURFACE MOUNT TECHNOLOGY AND METHOD OF MANUFACTURING THE SAME

Seoul Viosys Co., Ltd., ...

1. A light emitting diode (LED) module comprising:
a package substrate;
a first bonding pad and a second bonding pad formed over the package substrate to be separated from each other;
an LED unit electrically connected to the first and the second bonding pads; and
a phosphor layer covering the LED unit;wherein the LED unit includes:
a first semiconductor layer,
a second semiconductor layer,
an active layer disposed between the first and second semiconductor layer;
a reflective layer formed over the second semiconductor layer;
an insulating layer formed over the reflective layer and having a first pattern of holes and a second pattern of holes, the
first pattern of holes exposing selective portions of the reflective layer;

a first pad formed over the insulation layer to cover the first pattern and coupled to the first bonding pad, the first pad
electrically connected to the second semiconductor layer; and

a second pad formed over the insulation layer to cover the second pattern and coupled to the second bonding pad.

US Pat. No. 9,773,940

SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREOF

Seoul Viosys Co., Ltd., ...

1. A method of manufacturing a semiconductor substrate, the method comprising:
forming a first semiconductor layer on a substrate;
forming a metallic material layer on the first semiconductor layer;
forming a first portion of a second semiconductor layer on the first semiconductor layer and the metallic material layer;
removing the metallic material layer under the first portion of the second semiconductor layer by dipping the substrate in
a solution;

forming a second portion of the second semiconductor layer on the first portion of the second semiconductor layer; and
forming a cavity entirely through only a portion of the first semiconductor layer located under where the metallic material
layer was removed.