US Pat. No. 9,345,085

ILLUMINATION APPARATUS INCLUDING SEMICONDUCTOR LIGHT EMITTING DIODES

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a rectifier configured to be connected to an alternating current (AC) power source and to perform a full-wave rectification
for an applied AC voltage, and to provide a rectified voltage which is full-wave rectified to a light emitting unit as a driving
voltage, the light emitting unit comprising a first light emitting group to an n-th light emitting group, n being a positive
integer of at least two, and configured to emit light by receiving the driving voltage from the rectifier;

a control signal generator configured to generate a switch control signal for controlling a series and parallel connection
relationship between the first light emitting group to the n-th light emitting group according to an average voltage level
per period of the driving voltage, and generate a current control signal for controlling a sequential driving of at least
a portion of the first light emitting group to the n-th light emitting group according to the voltage level of the driving
voltage;

a switch unit configured to perform an on or off operation according to the switch control signal, to selectively transfer
the driving voltage; and

a current controller comprising a first driving current controller to an n-th driving current controller connected to the
first light emitting group to the n-th light emitting group, respectively, the first driving current controller to the n-th
driving current controller configured to be selectively activated according to the current control signal.

US Pat. No. 9,426,857

LED DRIVING CIRCUIT PACKAGE

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) driving circuit package, comprising:
a rectification unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to generate a ripple
voltage;

an LED driving switching unit comprising a plurality of switch units connected to respective cathodes of a plurality of external
series-connected LEDs and a plurality of current control units connected to the respective switch units; and

a low voltage control unit comprising:
a circuit power supply unit to generate low voltage power;
a voltage detection unit connected to the rectification unit and configured to detect a magnitude of the ripple voltage;
a reference frequency generation unit connected to the circuit power supply unit and the voltage detection unit and configured
to generate a reference frequency; and

a reference pulse generation unit connected to the circuit power supply unit and the voltage detection unit and configured
to generate a reference pulse for controlling the operation of the LED driving switch unit in response to the reference frequency
generated by the reference frequency generation unit and a magnitude of the voltage detected by the voltage detection unit,
wherein:
the reference frequency generation unit and the reference pulse generation unit are configured to be operated by the low voltage
power generated by the circuit power supply unit;

current supplied to at least one of the LEDs via a certain switch unit is controlled by the current control unit connected
to the certain switch unit so as to be constant current; and

the LED driving switch unit is connected between the low voltage control unit and the plurality of external series-connected
LEDs such that inputs of the plurality of switch units are directly connected to the low voltage control unit and outputs
of the plurality of switch units are respectively directly connected to the cathodes of the plurality of the external series-connected
LEDs.

US Pat. No. 9,554,440

DIMMABLE LED LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. A dimmable lighting emitting diode (LED) lighting apparatus comprising:
a power input unit generating drive voltage through rectification of received alternating current (AC) power and outputting
the generated drive voltage to a drive controller;

an insulation type signal transceiver receiving a pulse width modulation (PWM) signal output from a PWM dimmer and outputting
the PWM signal to the drive controller, while electrically insulating the PWM dimmer from the drive controller;

a first LED group to an nth LED group, n being a positive integer of 2 or greater, receiving the drive voltage and sequentially
operating under control of the drive controller; and

the drive controller comprising an integrating circuit, the drive controller controlling sequential operation of the first
LED group to the nth LED group according to a voltage level of the drive voltage, determining a dimming level based on the
received PWM dimming signal, and controlling dimming of the first LED group to the nth LED group based on the determined dimming
level.

US Pat. No. 9,433,054

LIGHT EMITTING APPARATUS WITH AMBIENT LIGHT SENSOR

Seoul Semiconductor Co., ...

1. A light emitting apparatus comprising:
a first light emitting unit including a first light emitting diode and a first phosphor;
a second light emitting unit including a second light emitting diode and a second phosphor;
an ambient light sensor configured to detect light information including a spectrum distribution of ambient light; and
a controller communicatively coupled to the ambient light sensor, the first light emitting unit, and the second light emitting
unit, the controller configured to receive the light information from the ambient light sensor and send a control signal to
operate the first and second light emitting units based at least partly on the received light information;

wherein a spectrum distribution provided by combination of the first and second light emitting units corresponds to a wavelength
distribution of spectral sensitivity of a CMOS image sensor.

US Pat. No. 9,411,089

LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME

Seoul Semiconductor Co., ...

1. A light source module, comprising:
a circuit board;
board pads disposed on the circuit board;
a light emitting diode chip disposed on the board pads; and
a wavelength converting layer disposed on the discharging part,
wherein:
the light emitting diode chip comprises a substrate and a semiconductor stacking part disposed between the substrate and the
circuit board;

the substrate comprises an inclined part disposed at an upper portion thereof and a discharging part disposed at one side
surface thereof; and

the wavelength converting layer is disposed on a first side surface of the semiconductor stacking part.

US Pat. No. 9,046,252

LED LAMP

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) lamp, comprising:
an LED package comprising:
a heat sink having an upper surface and a lower surface;
an LED chip disposed on the upper surface of the heat sink; and
a lead frame electrically connected to the LED chip, a portion of the lead frame being disposed under the lower surface of
the heat sink;

a printed circuit board (PCB) separated from the LED package and having a conductive pattern formed on a surface thereof facing
the lead frame; and

a pressing element configured to press the LED package toward the PCB so that the lead frame is in contact with the conductive
pattern,

wherein the pressing element is configured to contact the heat sink of the LED package when the lead frame is in contact with
the conductive pattern.

US Pat. No. 9,412,913

SLIM LED PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a first lead frame and a second lead frame separated from each other;
an LED chip disposed on the first lead frame and electrically connected with second lead frame; and
a resin covering at least portions of surfaces of the first and second lead frames,
wherein:
at least one of the first and second lead frames comprises resin-holding components disposed along adjacent sides of one of
the first and second lead frames, the resin-holding components being separated from each other at corners of the adjacent
sides; and

the resin-holding components are disposed on two adjacent sides of each of the first lead frame and the second lead frame.

US Pat. No. 9,435,051

BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

SixPoint Materials, Inc.,...

1. A method of growing a bismuth doped group III nitride bulk crystal having a surface area greater than 10 mm2 and thickness greater than 200 microns comprising:
a. placing a group III containing nutrient in a high-pressure reactor;
b. placing a mineralizer in the high-pressure reactor;
c. placing at least one seed crystal in the high-pressure reactor;
d. placing a bismuth-containing dopant in the high-pressure reactor;
e. placing ammonia in the high-pressure reactor;
f. sealing the high-pressure reactor;
g. providing sufficient heat to the ammonia to create a supercritical state of ammonia; and
h. crystallizing group III nitride on the seed crystal, wherein a sufficient amount of the bismuth-containing dopant is present
such that the crystallized group III nitride is semi-insulating.

US Pat. No. 9,450,155

LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
semiconductor stacked structures electrically connected to one another by connectors, wherein the semiconductor stacked structures
comprise a first semiconductor stacked structure and a second semiconductor stacked structure;

a wavelength converting layer covering upper surfaces of the semiconductor stacked structures;
first electrodes disposed on the semiconductor stacked structures, respectively;
second electrodes disposed on the semiconductor stacked structures, respectively;
a first additional electrode disposed only on the first electrode on the first semiconductor stacked structure;
a second additional electrode disposed only on the second electrode on the second semiconductor stacked structure; and
a mount comprising a first lead terminal and a second lead terminal, electrically connected to the first additional electrode
and the second additional electrode, respectively,

wherein each of the connectors electrically connects two of the semiconductor stacked structures by connecting the first electrode
of one semiconductor stacked structure to the second electrode of another semiconductor stacked structure, and

wherein the connectors are disposed under an upper surface of the wavelength converting layer.

US Pat. No. 9,153,750

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a plurality of light emitting cells each comprising a first conductive type semiconductor layer, an active layer, and a second
conductive type semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer of each of the
light emitting cells, the contact holes exposing the first conductive type semiconductor layer of each of the light emitting
cells;

a protective insulation layer covering a sidewall of each of the light emitting cells;
a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting
cells to each other;

a first bump arranged on the first side of the light emitting cells and electrically connected to the first conductive type
semiconductor layer via the plurality of contact holes of a first light emitting cell of the light emitting cells; and

a second bump arranged on the first side of the light emitting cells and electrically connected to the second conductive type
semiconductor layer of a second light emitting cell of the light emitting cells.

US Pat. No. 9,516,718

LED LUMINESCENCE APPARATUS

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) luminescence apparatus, comprising:
a rectifying unit configured to rectify an alternating current (AC) voltage and generate a rectified voltage;
LEDs connected in series to a first terminal of the rectifying unit;
switches comprising first terminals respectively connected to first electrodes of the LEDs; and
a switch control unit configured to:
sense respective currents through resistors respectively connected to second terminals of the switches;
compare each respectively sensed current with a reference current; and
output respective voltages corresponding to respective differences between the respectively sensed currents and the reference
current to respective third terminals of the switches,

wherein the switch control unit comprises:
operators comprising negative feedback loops, each operator being configured to compare a reference voltage corresponding
to the reference current with a respectively sensed voltage corresponding to a respectively sensed current, the respectively
sensed voltage being adjusted according to negative feedback of a respective negative feedback loop.

US Pat. No. 9,255,342

BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

SixPoint Materials, Inc.,...

1. A semi-insulating wafer comprising crystalline GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) having a surface area more than 10 mm2 and thickness more than 200 microns wherein the crystalline GaxAlyIn1-x-yN is doped with a sufficient amount of bismuth to make the wafer semi-insulating.

US Pat. No. 9,305,772

ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR HAVING SPECIFIED DISLOCATION DENSITY, OXYGEN/ELECTRON CONCENTRATION, AND ACTIVE LAYER THICKNESS

SixPoint Materials, Inc.,...

1. An electronic device comprising a substrate of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1), an active layer of Ga1-x2-y2Alx2Iny2N (0?x2?1, 0?y2?1) on a first side of the substrate, a back ohmic contact on a second side opposite to the first side of the
substrate, and a depletion region having a depth in the active layer, wherein;
(a) the substrate has a dislocation density of less than 105 cm?2;

(b) the substrate has an electron concentration or an oxygen concentration greater than 1018 cm?3;

(c) the active layer has an electron concentration or an oxygen concentration less than 1018 cm?3; and

(d) the depletion region does not extend into the substrate for any applied voltage within an operation range of the device,
and the depletion region has a Schottky contact or a metal-insulator-semiconductor structure associated with the depletion
region;

(e) a current blocking layer between the substrate and the active layer, wherein the current blocking layer has an opening
for an electrical current;

(f) a front ohmic contact adjacent to the Schottky contact or the metal-insulator-semiconductor structure;
and wherein the front ohmic contact and the Schottky contact or the metal-insulator-semiconductor structure are positioned
to regulate an electric current through the front ohmic contact to the back ohmic contact with a voltage applied across the
front ohmic contact and the Schottky contact or the metal-insulator-semiconductor structure.

US Pat. No. 9,287,477

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package comprising:
a lead frame comprising a first lead and a second lead spaced apart from the first lead;
an LED chip disposed on the first lead;
a housing covering a portion of the lead frame and comprising an opening exposing the LED chip, a support side contacting
the first lead and the second lead, and an opposite side that is opposite to the support side; and

a lead heat dissipating part extended from the first lead and partially exposed from the support side of the housing,
wherein the support side of the housing is thicker than the opposite side.
US Pat. No. 9,234,129

SURFACE-MODIFIED QUANTUM DOT LUMINOPHORES

Seoul Semiconductor Co., ...

1. A surface-modified quantum dot (QD) luminophore, comprising:
a QD luminophore; and
a fluorinated coating disposed on the QD luminophore and comprising a fluorine-functionalized organosilane having the general
formula Si(OR)3X,

wherein R is an alkyl group having one or two carbon atoms, and X is a fluorine-functionalized organic ligand, the fluorinated
coating configured to generate hydrophobic surface sites.

US Pat. No. 9,172,020

LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING MODULE COMPRISING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode package, comprising:
a light emitting diode chip;
a lead frame comprising a chip area on which the light emitting diode chip is disposed; and
a package body comprising a cavity and supporting the lead frame,
wherein:
the chip area is exposed through the cavity;
the lead frame comprises a first terminal group disposed at a first side of the chip area and a second terminal group disposed
at a second side of the chip area;

the first terminal group and the second terminal group each comprise a first terminal connected to the chip area and a second
terminal separated from the chip area;

the second terminal of the first terminal group is exposed through the cavity; and
the second terminal of the second terminal group is buried in the package body and not exposed through the cavity.

US Pat. No. 9,112,121

LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
semiconductor stacked structures electrically connected to one another by connectors;
a wavelength converting layer covering the semiconductor stacked structures;
a first electrode electrically connected to a first stacked structure of the semiconductor stacked structures;
a second electrode electrically connected to a second stacked structure of the semiconductor stacked structures;
at least one first additional electrode disposed on the first electrode, passing through the wavelength converting layer,
and exposed to the outside of the wavelength converting layer; and

at least one second additional electrode disposed on the second electrode, passing through the wavelength converting layer,
and exposed to the outside of the wavelength converting layer,

the first additional electrode being a current input electrode to the light emitting device and the second additional electrode
being a current output electrode from the light emitting device.

US Pat. No. 9,518,340

METHOD OF GROWING GROUP III NITRIDE CRYSTALS

SixPoint Materials, Inc.,...

1. A method of making a group III nitride composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) comprising:
(a) growing a first group III nitride crystal on a first face and growing a second group III nitride crystal on a second face
of a first-generation seed to form a first ingot of group III nitride;

(b) slicing the first ingot into a first, second, and third wafer;
wherein the first wafer includes the first-generation seed, and the first wafer has a thickness greater than a thickness of
each of the second wafer and the third wafer, and wherein the thickness of the first wafer containing the first-generation
seed is large enough to avoid breaking of the first wafer.

US Pat. No. 9,455,388

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a first lead frame and a second lead frame;
an LED chip disposed on the first lead frame;
a wire electrically connecting the LED chip and the second lead frame; and
a housing disposed on the first lead frame and the second lead frame, the housing comprising:
an external housing surrounding an external cavity; and
an internal housing covering at least a portion of the first lead frame and the second lead frame, and exposing a portion
of the first lead frame and the second lead frame in a specified shape, wherein the exposed portion comprises a first internal
cavity surrounded by the internal housing.

US Pat. No. 9,447,957

LED LAMP

Seoul Semiconductor Co., ...

1. A light-emitting diode lamp, comprising:
a substrate;
at least one first light source disposed on a first surface of the substrate;
at least one second light source disposed on a second surface of the substrate opposite to the first surface; and
a heat dissipation part comprising a first heatsink disposed on the second surface of the substrate and corresponding to the
at least one first light source, and a second heatsink disposed on the first surface of the substrate and corresponding to
the at least one second light source.

US Pat. No. 9,299,828

NITRIDE-BASED TRANSISTORS HAVING STRUCTURES FOR SUPPRESSING LEAKAGE CURRENT

Seoul Semiconductor Co., ...

1. A nitride-based transistor, comprising:
a semiconductor structure comprising:
a first nitride-based semiconductor layer doped with impurities of a first conductivity type;
a second nitride-based semiconductor layer doped with impurities of a second conductivity type; and
a third nitride-based semiconductor layer doped with impurities of the first conductivity type;
a gate electrode overlapping the second nitride-based semiconductor layer;
a leakage current suppression structure disposed along edges of the semiconductor structure; and
a first trench penetrating the first and second nitride-based semiconductor layers and extending into the third nitride-based
semiconductor layer,

wherein:
the first, second, and third nitride-based semiconductor layers are disposed adjacent to each other; and
the leakage current suppression structure comprises a depletion layer disposed in at least one of the first and third nitride-based
semiconductor layers.

US Pat. No. 9,107,262

ILLUMINATION APPARATUS INCLUDING SEMICONDUCTOR LIGHT EMITTING DIODES

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a rectifier configured to receive alternating current (AC) power and generate a driving voltage in the form of a rectifying
voltage;

a control signal generator configured to:
compare the driving voltage with a reference voltage to generate a sampling signal; and
perform a logic operation on the sampling signal to generate a switch control signal and a current control signal;
a switch configured to perform on/off operations in response to the switch control signal and selectively transmit the driving
voltage;

a total current controller configured to receive the sampling signal and generate a target voltage as an analog signal;
a current controller configured to be enabled in response to the current control signal, the current controller comprising
driving current controllers configured to determine a driving current using the received target voltage signal; and

a light emitting unit connected to the current controller, the light emitting unit comprising light emitting diodes (LEDs).

US Pat. No. 9,101,019

LED LUMINESCENCE APPARATUS AND METHOD OF DRIVING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) luminescence apparatus, comprising:
a rectification circuit unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to output
a unidirectional ripple voltage;

a plurality of LED units connected in series, each of the plurality of LED units comprising an anode and a cathode, the plurality
of LED units being configured to receive the unidirectional ripple voltage;

a plurality of switch units, one end of each being connected to the cathode of a repective LED units;
a plurality of constant current control circuit units, one end of each being connected to another end of a respective switch
unit to receive a current from the respective switch unit, each of the constant current control circuit units being configured
to output a current control signal to the respective switch unit to control a magnitude of the received current to have a
specific value; and

a current comparison unit to receive currents flowing from the plurality of switching units, and generate a plurality of switching
control signals for the respective switch units to sequentially drive the plurality of constant current control circuit units.

US Pat. No. 9,360,165

LED LAMP

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) lamp, comprising:
a heat sink comprising a first surface and a second surface;
a substrate comprising a first surface and a second surface, the substrate disposed on the heat sink and the first surface
of the heat sink contacting the second surface of the substrate; and

at least one first LED disposed on the first surface of the substrate;
a transparent cover connected to the heat sink and spaced apart from the substrate;
wherein the second surface of the heat sink is adjacent to the first surface of the heat sink, the second surface of the heat
sink extends toward the transparent cover, and at the least an end point of the second surface of the heat sink is disposed
over an outer region of edges of the substrate.

US Pat. No. 9,349,592

METHOD FOR MAKING ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR HAVING SPECIFIED DISLOCATION DENSITY OXYGEN/ELECTRON CONCENTRATION, AND ACTIVE LAYER THICKNESS

SixPoint Materials, Inc.,...

1. A method of fabricating an electronic device comprising;
(a) growing an active layer of Ga1-x2-y2Alx2Iny2N (0?x2?1, 0?y2?1) by vapor phase epitaxy on a first side of a substrate of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1) sliced from a bulk crystal of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1) grown in supercritical ammonia;

(b) forming an Ohmic contact on a second side of the substrate;
(c) forming a Schottky contact, metal-insulator-semiconductor structure or p-type semiconductor on the active layer;
wherein
(d) the substrate has a dislocation density of less than 105 cm?2;

(e) the substrate has electron concentration or an oxygen concentration higher than 1018 cm?3;

(f) the active layer has an electron concentration or an oxygen concentration of Less than 1018 cm?3;

(g) the active layer has a thickness greater than a thickness of the depletion region for any applied voltage within an operation
range of the electronic device, and wherein the active layer has a concentration of sodium at least 100 times less than a
concentration of sodium of the substrate, and the sodium concentration of the substrate is greater than 1016 cm?3.

US Pat. No. 9,236,549

HEAT CONDUCTING SLUG HAVING MULTI-STEP STRUCTURE AND LIGHT EMITTING DIODE PACKAGE USING THE SAME

Seoul Semiconductor Co., ...

1. A heat conducting slug for dissipating heat from a light emitting chip disposed thereon, the heat conducting slug comprising:
a first slug;
a second slug disposed on the first slug; and
a third slug disposed on the second slug opposite to the first slug such that the second slug is disposed between the first
slug and the third slug,

wherein the second slug and the third slug are respectively shaped to have edges, and the edges of the second slug and the
edges of the third slug are arranged to cross each other,

wherein the second slug is entirely disposed within the perimeter of the first slug, and
wherein heat from the light emitting chip is configured to flow through the third slug to the second slug and then the first
slug.

US Pat. No. 9,224,817

COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE

SixPoint Materials, Inc.,...

1. A composite substrate for device fabrication comprising a first layer composed of GaxAlyIn1-x-yN (0 oxide which can be removed by in-situ etching in a device fabrication reactor, and wherein the metal oxide contains a mixture
of silicon dioxide and at least one oxide of gallium, aluminum, indium, zinc, magnesium, calcium, sodium, tin and titanium,
and wherein the second layer is sufficiently thick to prevent further oxidation of the first layer and sufficiently thin to
be removed by said in-situ etching at 1050° C. or less with ammonia.

US Pat. No. 9,530,947

LENS AND LIGHT EMITTING MODULE FOR SURFACE ILLUMINATION

Seoul Semiconductor Co., ...

1. A light emitting module, comprising:
a circuit board;
light emitting elements disposed on the circuit board, each light emitting element comprising:
light emitting diode chips; and
a wavelength conversion layer coated on the light emitting diode chips; and
a lens disposed on the light emitting elements and configured to diffuse light emitted from the light emitting elements,
wherein the lens comprises a concave part comprising a light incident surface and an upper surface through which the light
incident on the lens is emitted,

at least one of the light incident surface and the upper surface comprises sections disposed at least 15° from a central axis
and sequentially connected in a first direction,

the sections comprise sequentially connected first, second, and third sections, and
thicknesses of the first, second, and third sections are each at least 1 ?m, and are less than the width of the light emitting
element.

US Pat. No. 9,357,605

LED DRIVING APPARATUS AND DRIVING METHOD FOR CONTINUOUSLY DRIVING LED

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) driving apparatus, comprising:
an LED driving module configured to provide a first driving voltage having a voltage value changing over time ranging from
a minimum voltage value of Vf1 or less to a maximum voltage value of Vfn or greater; and

an LED light emitting module comprising a first LED group and a second LED group to an n-th LED group, and configured to receive
the first driving voltage from the LED driving module, wherein n is an integer of at least two,

wherein:
the LED driving module is configured to drive the LED light emitting module so that the first LED group is turned on when
the first driving voltage is Vf1 or greater, drive the LED light emitting module so that the first LED group and the second LED group are connected in series
with each other and are turned on when the first driving voltage is Vf2 or greater, and drive the LED light emitting module so that the first LED group to the n-th LED group are connected in series
with each other and are all turned on when the first driving voltage is Vfn or greater, wherein Vf1
the LED driving apparatus further comprises a second driving voltage providing module configured to store a portion of the
first driving voltage and selectively provide a second driving voltage to the remaining LED groups except for at least the
first LED group of the LED groups, when the first driving voltage is at least Vf1 or less.

US Pat. No. 9,276,182

LIGHT EMITTING ELEMENT

Seoul Semiconductor Co., ...

1. A light emitting element comprising:
a first lead, comprising:
a plurality of leg sections;
a connecting section connecting a first leg section and a second leg section of the plurality of leg sections; and
a chip seating section disposed in the connecting section;
at least two second leads separated from each other, each of the at least two second leads comprising a connecting section
and a leg section; and

at least two wires,
wherein each of the at least two wires electrically connects the chip seating section and each of the at least two second
leads, respectively,

wherein the first lead and the at least two second leads are spaced apart from each other,
wherein the chip seating section extends from the connecting section toward the at least two second leads, and
wherein the width of the connecting section is at least as wide as the chip seating section.

US Pat. No. 9,231,173

PHOSPHOR SHEET, LIGHT-EMITTING DEVICE HAVING THE PHOSPHOR SHEET AND METHOD OF MANUFACTURING THE SAME

Seoul Semiconductor Co., ...

11. A light-emitting device, comprising:
a substrate;
light emitting diode (LED) chips disposed on the substrate;
a phosphor sheet comprising an upper surface and an opposing lower surface; and
at least one second transparent part disposed between the phosphor sheet and the LED chips,
wherein:
the phosphor sheet is disposed on upper surfaces of the LED chips;
the phosphor sheet comprises at least one first transparent part extending from a lower surface of the phosphor sheet;
the area of the upper surface of the phosphor sheet is greater than the total area of the upper surfaces of the LED chips;
and

the at least one first transparent part comprises transparent parts respectively contacting at least one of a side and a corner
of each of the LED chips.

US Pat. No. 9,147,821

LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:
first and second lead frames spaced apart from each other, the first and second lead frames each comprising a first portion,
and a second portion disposed on the first portion; and

a light-emitting diode chip disposed on the second portion of the first or second lead frame;
wherein each the first and second portions has an uniform thickness, the first and second portions have different planar shapes
from each other,

wherein each the first and second portions comprises a sidewall, and at least one of the sidewalls is covered by a resin portion,
wherein the first and second lead frames each comprise a first surface, a second surface opposite to the first surface, and
sidewalls disposed between the first and second surfaces, at least one of the sidewalls comprising an inset sidewall partially
defining an outer fixing space, and

wherein a second planar area of the outer fixing space disposed between the second portions is smaller than a first planar
area of the outer fixing space disposed between the first portions.

US Pat. No. 9,293,677

HEAT CONDUCTING SLUG HAVING MULTI-STEP STRUCTURE AND LIGHT EMITTING DIODE PACKAGE USING THE SAME

SEOUL SEMICONDUCTOR CO., ...

1. A light-emitting diode (LED) package, comprising:
a plurality of inner leads;
a plurality of outer leads extending from the inner leads;
a slug electrically connected to at least one of the inner leads, the slug comprising a thermally conductive material;
a light-emitting chip arranged on an upper end of the slug;
a housing having a sidewall that at least partially defines a cavity in which the slug is disposed, the housing having an
uppermost surface that is disposed higher than the upper end of the slug; and

a molding member encapsulating the light-emitting chip,
wherein the housing comprises an insulating material and a plurality of first grooves formed within an area of the uppermost
surface of the housing, each of the first grooves being surrounded by the uppermost surface area of the housing and being
spaced apart from the cavity,

wherein a portion of the uppermost surface area of the housing having a uniform height is disposed between each of the first
grooves and the cavity,

wherein the molding member directly contacts the light-emitting chip, the molding member extending above the uppermost surface
of the housing,

wherein the molding member directly contacts the uppermost surface of the housing, and
wherein the plurality of first grooves is entirely disposed outside the circumference of the molding member.

US Pat. No. 9,121,555

LENS AND LIGHT EMITTING MODULE FOR SURFACE ILLUMINATION

Seoul Semiconductor Co., ...

1. A light-emitting module, comprising:
a circuit board;
a light-emitting device disposed on the circuit board; and
a lens configured to disperse light emitted from the light-emitting device, the lens comprising:
a lower surface comprising a concave section through which light enters the lens;
an upper surface through which light exits the lens;
legs coupled to the circuit board and disposed outside of the upper surface;
a flange; and
leg supports connecting the legs and the flange,
wherein:
the light-emitting device is disposed within the concave section of the lens;
the leg supports are disposed on an upper surface of the circuit board; and
each of the leg supports is connected to two of the legs.

US Pat. No. 9,048,391

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode package comprising:
a package body comprising:
a plurality of upper conductive patterns disposed on an upper surface of a dielectric substrate;
a plurality of lower conductive patterns disposed on a lower surface of the dielectric substrate, the dielectric substrate
having a cut plane portion perpendicular to the upper and lower surfaces of the dielectric substrate;

conductive materials extending from the upper conductive patterns to the lower conductive patterns through an interior of
the dielectric substrate;

a first heat sink pattern disposed on the lower surface of the dielectric substrate and separated by a fixed distance from
the upper conductive patterns; and

a light emitting diode chip mounted on the package body;
wherein an edge portion of at least one of an upper conductive pattern of the plurality of upper conductive patterns and a
lower conductive pattern of the plurality of lower conductive patterns is not aligned in the same plane as the cut plane portion
of the dielectric substrate.

US Pat. No. 9,423,084

INDIRECT LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. An indirect lighting apparatus, comprising:
a light-emitting device comprising a semiconductor;
a reflector disposed above the light-emitting device; and
a first wavelength conversion layer disposed on a surface of the reflector facing the light-emitting device and spaced apart
from the light-emitting device,

wherein:
the first wavelength conversion layer comprises first and second phosphors configured to change the wavelength of light emitted
from the light-emitting device, the first and second phosphors configured to emit different wavelengths of light;

the reflector is configured to reflect light emitted from the first wavelength conversion layer, back towards the first wavelength
conversion layer; and

the first phosphors are confined to a first layer of the first wavelength conversion layer;
the second phosphors are confined to a second layer of the first wavelength conversion layer; and
the first wavelength conversion layer further comprises a band pass filter disposed between the first layer and the second
layer.

US Pat. No. 9,293,664

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type
semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact
holes exposing the first conductive type semiconductor layer;

a first electrode pad arranged over a first side of the semiconductor stack, the first electrode pad being electrically connected
to the first conductive type semiconductor layer via some of the plurality of contact holes;

a second electrode pad arranged over the first side of the semiconductor stack, the second electrode pad being electrically
connected to the second conductive type semiconductor layer; and

a protective insulation layer covering a sidewall of the first conductive type semiconductor layer and the second conductive
type semiconductor layer,

wherein the protective insulation layer includes insulation layers having different indices of refraction from each other.

US Pat. No. 9,103,506

LED LAMP

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) lamp, comprising:
a substrate;
a heat sink disposed on a first surface of the substrate;
at least one first LED disposed on the first surface of the substrate;
a transparent cover connected to the heat sink, the transparent cover covering the at least one first LED; and
a reflection layer disposed on the heat sink,
wherein the transparent cover comprises a lower portion disposed on the heat sink, and an upper portion disposed on the lower
portion, and

wherein the reflection layer is configured to reflect light emitted from the at least one first LED towards the lower portion
of the transparent cover.

US Pat. No. 9,203,007

LIGHT EMITTING DIODE ASSEMBLY

Seoul Semiconductor Co., ...

13. A light emitting diode assembly, comprising:
a red light emitting diode chip;
a short wavelength light emitting diode chip emitting light having a shorter wavelength than light emitted from the red light
emitting diode chip;

a base substrate;
a first heat dissipator dissipating heat generated from the short wavelength light emitting diode chip and the first heat
dissipator comprising:

a first landing pad placed on the base substrate and thermally coupled to the short wavelength light emitting diode chip;
and

a first external pad placed under the base substrate and a first via connecting the first landing pad to the first external
pad; and

a second heat dissipator dissipating heat generated from the red light emitting diode chip and the second heat dissipator
comprising:

a second landing pad placed on the base substrate and thermally coupled to the red light emitting diode chip; and
a second external pad placed under the base substrate and a second via connecting the second landing pad to the second external
pad,

wherein the second heat dissipator has higher heat dissipation capability than the first heat dissipator and the number of
second vias is greater than the number of first vias.

US Pat. No. 9,171,946

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Seoul Semiconductor Co., ...

1. A nitride semiconductor device, comprising:
a channel layer comprising a first nitride-based semiconductor having a first energy bandgap;
a barrier layer comprising a second nitride-based semiconductor having a second energy bandgap different from the first energy
bandgap, the barrier layer comprising a recess;

a drain electrode disposed on a first region of the barrier layer; and
a recessed-drain Schottky electrode disposed in the recess of the barrier layer, the recessed-drain Schottky electrode contacting
the drain electrode.

US Pat. No. 9,484,510

LENS AND LIGHT EMITTING MODULE FOR SURFACE ILLUMINATION

Seoul Semiconductor Co., ...

1. A light-emitting module, comprising:
a circuit board;
a light-emitting device disposed on the circuit board; and
a lens disposed on the circuit board, the lens configured to distribute light emitted from the light-emitting device,
wherein the lens comprises:
a first surface comprising a concave portion having an incidence surface configured to receive light emitted from the light-emitting
device,

a second surface through which the light incident on the incidence surface of the concave portion exits, and
a flange connecting the first surface and the second surface,
wherein the light-emitting device is disposed within the concave portion of the lens,
wherein the first surface of the lens comprises a flat surface surrounding the concave portion, and an inclination surface
surrounding the flat surface and extending to the flange,

wherein the lens further comprises leg portions disposed on the inclination surface between the flat surface and the flange,
the leg portions of the lens being connected to the circuit board, and

wherein the inclination surface has an inclination angle of less than 10 degrees with respect to the flat surface of the first
surface of the lens.

US Pat. No. 9,472,743

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light-emitting diode package, comprising:
a package body and a light-emitting diode chip disposed on the package body, the package body comprising:
an upper insulation substrate comprising upper conductive patterns;
a lower insulation substrate comprising lower conductive patterns;
and
middle conductive patterns disposed between the upper insulation substrate and the lower insulation substrate,
wherein the lower conductive patterns comprise:
a first lower conductive pattern disposed at a center thereof; and
a second lower conductive pattern and a third lower conductive pattern disposed at opposite sides of the first upper conductive
pattern, respectively.

US Pat. No. 9,378,701

BACKLIGHT DRIVING APPARATUS

Seoul Semiconductor Co., ...

1. A backlight driving apparatus configured to drive a backlight unit comprising light-emitting diodes (LEDs), the backlight
driving apparatus comprising:
a rectifying unit configured to rectify an alternating current (AC) voltage and to generate a driving voltage for the LEDs;
connection changing units configured to change a connection between the LEDs depending on a level of the driving voltage;
and

a light output compensation unit configured to generate a compensation voltage using the driving voltage and selectively supply
the compensation voltage to the LEDs,

wherein the light output compensation unit comprises:
a first diode comprising an anode connected to an output terminal of the rectifying unit;
a capacitor comprising a first terminal connected to a cathode of the first diode;
a second diode comprising an anode connected to a connection node between the first diode and the capacitor;
a switch unit connected between a second terminal of the capacitor and a ground; and
a switch control unit configured to control an open or short state of the switch unit.

US Pat. No. 9,320,108

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:
a package body comprising a cavity;
a light-emitting diode chip disposed in the cavity; and
a wavelength conversion layer disposed on the light-emitting diode chip,
wherein:
the wavelength conversion layer comprises a first transparent resin and a second transparent resin disposed on an upper surface
of the first transparent resin;

the first transparent resin comprises a first phosphor and is disposed directly on the light-emitting diode chip;
the second transparent resin does not comprise a phosphor; and
the first phosphor is present in a concentration gradually decreasing towards the upper surface of the first transparent resin.

US Pat. No. 9,312,246

LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME

Seoul Semiconductor Co., ...

1. A lighting system, comprising:
a base plate comprising cavities;
a plurality of light emitting devices disposed in the cavities; and
a molding portion,
wherein each of the plurality of light emitting devices consists of a single first light emitting portion and a single second
light emitting portion, the single first light emitting portion having a color temperature higher than that of the single
second light emitting portion, wherein each of the single first light emitting portion and the single second light emitting
portion comprises a light emitting diode chip and a phosphor,

wherein only one light emitting diode chip is included in the first light emitting portion and only one light emitting diode
chip is included in the second light emitting portion,

wherein the single first light emitting portion and the single second light emitting portion are driven independently,
wherein the single first light emitting portion and the single second light emitting portion are separated by a sidewall of
one of the cavities,

wherein the lighting system further comprises at least one controller configured to drive only the single first light emitting
portion for a first period of time and drive only the single second light emitting portion for a second period of time,

wherein the first period of time is followed by the second period of time,
wherein the molding portion encapsulates both the single first light emitting portion and the single second light emitting
portion disposed in the cavities and separated by the sidewall of one of the cavities,

wherein the sidewall of one of the cavities forms a uniform surface with the phosphor from the single first light emitting
portion and the single second light emitting portion, and

wherein the molding portion is disposed on the uniform surface and the molding portion forms an uppermost surface that is
the same height as a top surface of the base plate.

US Pat. No. 9,048,409

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED), comprising:
a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between
the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types;

a first contact layer disposed on the first type semiconductor layer;
a second contact layer disposed on the second type semiconductor layer;
a first insulation layer covering the second contact layer, sidewalls of the active layer, and the second semiconductor layer,
and contacting the first contact layer, the first insulation layer comprising a first opening exposing the first semiconductor
layer and a second opening exposing the second contact layer;

a second insulation layer is disposed on the first insulation layer;
a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first
contact layer;

a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second
contact layer; and

a third insulation layer disposed on side surfaces of the first bump and the second bump.

US Pat. No. 9,431,488

COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE

SixPoint Materials, Inc.,...

1. A method comprising:
a. forming a protective metal oxide layer upon a face of a group III-nitride wafer prior to loading the wafer in a device
fabrication reactor,

i. wherein the group III-nitride wafer's face is of sufficient quality for epitaxial deposition of subsequent materials used
to construct a device on said face, and

ii. wherein
1. the protective metal oxide layer is capable of being etched by a chemical in the device fabrication reactor,
2. the protective metal oxide layer is sufficiently thick to protect the face from mechanical, physical and/or chemical damage
during storage, transport and/or handling of the wafer, and

3. the protective metal oxide layer is sufficiently thin to be removed in the device fabrication reactor, and
b. storing said wafer.

US Pat. No. 9,093,615

LED MODULE, METHOD FOR MANUFACTURING THE SAME, AND LED CHANNEL LETTER INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) module, comprising:
a circuit board;
an LED disposed on the circuit board; and
a molding cover covering at least a portion of an upper surface, a lower surface, and a side surface of the circuit board,
wherein the molding cover has an opening at the lower surface of the circuit board exposing the lower surface of the circuit
board, and

wherein the circuit board comprises a hole extending from the upper surface to the lower surface, and a portion of the molding
fills a portion of the hole.

US Pat. No. 9,412,924

LIGHT EMITTING DIODE PACKAGE HAVING HEAT DISSIPATING SLUGS

Seoul Semiconductor Co., ...

1. A light emitting diode package, comprising:
first and second conductive substrates completely spaced apart from each other;
a light emitting diode die disposed on the first conductive substrate; and
a main package body disposed on the first and second conductive substrates and surrounding the light emitting diode die,
wherein each of the first and second conductive substrates comprises at least one fin.

US Pat. No. 9,167,066

MOBILE COMMUNICATION TERMINAL HAVING A LIGHT GUIDE PLATE FOR INDICATING RECEIPT OF A SIGNAL

Seoul Semiconductor Co., ...

1. A mobile communication terminal having a light guide plate for indicating receipt of a signal, comprising:
an upper frame;
a light guide plate mounted in the upper frame and comprising an opening corresponding to a region of an image display window;
and

at least two light emitting diodes (LEDs) arranged on a printed circuit board (PCB) adjacent to a side of the light guide
plate, the LEDs configured to introduce light laterally or upwardly into the light guide plate,

wherein:
the PCB comprises printed circuits configured to supply current to the LEDs;
the LEDs are configured to be simultaneously or individually driven through the circuits; and
the PCB is biased to the side of the light guide plate such that the PCB does not overlap the opening.

US Pat. No. 9,603,212

AC-DRIVEN LED LIGHTING APPARATUS WITH MULTI-CELL LED

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) lighting apparatus, comprising:
a rectification unit connected to an alternating current (AC) power source; and
an LED light emitting module comprising m multi-cell LEDs each comprising n light emitting cells, n being a positive integer
of 2 or greater, and m being a positive integer greater than 1; and

an LED driving module configured to control sequential driving of first to nth light emitting cell groups according to a voltage level of the rectified voltage,

wherein:
the rectification unit is configured to supply a rectified voltage to the LED light emitting module through full-wave rectification
of an AC voltage from the AC power source;

the LED light emitting module is configured to emit light upon receiving the rectified voltage from the rectification unit;
and

the first to nth light emitting cell groups respectively comprise first to nth light emitting cells from the m multi-cell LEDs, the first to nth light emitting cell groups respectively comprising the m light emitting cells therein being connected to each other in series
to the LED driving module.

US Pat. No. 9,447,928

LIGHTING DEVICE

Seoul Semiconductor Co., ...

12. A lighting device comprising:
a base;
a protrusion disposed on the base and protruding upward along a vertical centerline, wherein the protrusion comprises first
surfaces in a plane parallel to the centerline adjacent the base and second surfaces inclined inward toward the vertical centerline
at a distal end thereof;

a light emitting module disposed on the protrusion, wherein:
the light emitting module comprises a flexible circuit board comprising a plurality of side surfaces adjoining each other
in a lateral direction, and a plurality of inclined surfaces vertically adjoining corresponding side surfaces and configured
to adjoin each other when assembled on the protrusion,

the light emitting module comprises light emitting diodes disposed on at least some of the inclined surfaces of the flexible
circuit board, and

the light emitting diodes are connected to each other in series or parallel depending upon a change in input AC power; and
connection changing units, each connection changing unit comprising a switch connected between adjacent light emitting diodes
to control connection between the light emitting diodes.

US Pat. No. 9,367,182

PANEL OPERATING APPARATUS

Seoul Semiconductor Co., ...

1. A panel operating apparatus, comprising:
a panel;
a tact member arranged on a circuit board located adjacent to the panel; and
a resilient member electrically connected to a circuit pattern of the circuit board, the resilient member being separated
from the panel and the tact member, the resilient member configured to be selectively brought into direct contact with the
panel only or both the panel and the tact member depending on a degree of pressure applied to the panel,

wherein the panel operating apparatus is configured to change a state of a device electrically connected thereto in response
to the resilient member being in direct contact with the panel only in a first operation mode.

US Pat. No. 9,255,695

ILLUMINATION LENS FOR LED BACKLIGHTS

Seoul Semiconductor Co., ...

1. A light-emitting apparatus, comprising:
a light emitting element disposed on a substrate;
a light flux control member disposed on the light emitting element; and
a reflecting diffusive sheet disposed between the light flux control member and the substrate,
wherein the light flux control member comprises:
a bottom surface section disposed on the substrate;
a non-rotationally symmetric input surface section comprising an inward recess disposed in the bottom surface section at a
position directly above the light emitting element; and

a non-rotationally symmetric output surface configured to refract light passing through the input surface section, and to
transmit light outside;

wherein the reflecting diffusive sheet comprises a hole configured to allow light emitted from the light flux control member
to escape, and the reflecting diffusive sheet is configured to block Fresnel reflections that occur outside of the light flux
control member.

US Pat. No. 9,257,624

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode package, comprising:
a package body and a light emitting diode chip disposed on the package body, the package body comprising:
an upper insulation substrate comprising upper conductive patterns;
a lower insulation substrate comprising lower conductive patterns; and
middle conductive patterns interposed between the upper insulation substrate and the lower insulation substrate,
wherein:
at least one of the middle conductive patterns extends to a side surface of one of the
upper insulation substrate and the lower insulation substrate; and
the at least one middle conductive pattern is exposed to the outside of the package body.

US Pat. No. 9,287,482

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light-emitting diode package, comprising:
first, second, and third light-emitting diode chips;
first leads comprising first, second, and third chip mounting sections on which the first, second, and third light-emitting
diode chips are disposed, respectively;

second leads separated from the first leads and connected to the first, second, and third light-emitting diode chips via wires,
respectively; and

a substrate comprising:
the first leads and the second leads disposed on a first surface of the substrate;
a first insulating plate comprising a filling recess;
a heat sink disposed only in the filling recess of the first insulating plate; and
a second insulating plate disposed on the first insulating plate and covering the filling recess and the heat sink,
wherein the first, second, and third chip mounting sections are disposed around a center of the substrate through which an
optical axis of the light-emitting diode package passes.

US Pat. No. 9,220,143

LED DIMMER, LED LIGHTING DEVICE COMPRISING SAME, AND METHOD FOR CONTROLLING DIMMING OF LED LIGHTING DEVICE

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) dimmer for an LED lighting device, comprising:
a power switch;
a drive voltage supply; and
an LED light-emitting unit,
wherein, when operating zones of the LED lighting device are changed due to switching the power switch;
the LED dimmer is configured to select a first dimming level of (k+1)th operating zone after switching the power switch, k being a positive integer;

the first dimming level being different than a second dimming level of a kth operating zone before switching the power switch; and

the LED dimmer is configured to controls luminance of the LED light-emitting unit according to the second dimming level in
the kth operating zone.

US Pat. No. 9,345,094

DIMMABLE AC DRIVEN LED ILLUMINATING APPARATUS

Seoul Semiconductor Co., ...

1. A dimmable alternating current (AC) driven light emitting diode (LED) illuminating apparatus comprising:
a dimmer configured to generate controlled AC power according to a selected dimming level;
a rectifying unit configured to full-wave rectify the controlled AC power to generate a driving voltage;
a dimming level detecting unit configured to detect the selected dimming level and output a detected dimming level signal;
LED groups that each comprise at least one LED; and
an LED driving module configured to detect the voltage level of the driving voltage and sequentially drive the LED groups
according to the detected voltage level, by constantly controlling an LED driving current applied to a driven LED group, based
on the dimming level signal,

wherein the LED driving module determines a reference value of the LED driving current in proportion to a magnitude of the
dimming level signal and controls a maximum value of the LED driving current based on the determined reference value.

US Pat. No. 9,202,872

METHOD OF GROWING GROUP III NITRIDE CRYSTALS

SixPoint Materials, Inc.,...

1. A method of growing an ingot of group III nitride composed of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) comprising:
(a) growing a first group III nitride crystal on a first face of a seed; and
(b) growing a second group III nitride crystal on a second face of the seed;
wherein the seed comprises:
(1) a first layer comprised of a plurality of wafers, said plurality being comprised of at least a first group III nitride
wafer and a second group III nitride wafer:

a) wherein the first group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the first
group III nitride wafer in the seed;

b) wherein the second group III nitride wafer has an edge that is adjacent to an exposed face and a hidden face of the second
group III nitride wafer in the seed;

c) wherein the first group III nitride wafer's edge faces the second group III nitride wafer's edge; and
d) wherein said plurality of wafers in the first layer all have the same crystal lattice orientation, thereby establishing
a crystal lattice orientation for the first face of the seed;

(2) a second layer comprised of a plurality of wafers, said plurality being comprised of at least a third group III nitride
wafer and a fourth group III nitride wafer:

a) wherein the third group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the third group
III nitride wafer in the seed;

b) wherein the fourth group III nitride wafer has an edge adjacent to an exposed face and a hidden face of the fourth group
III nitride wafer in the seed;

c) wherein the third group III nitride wafer's edge faces the fourth group III nitride wafer's edge; and
d) wherein the plurality of wafers in the second layer all have the same crystal lattice orientation, thereby establishing
a crystal lattice orientation for the second face of the seed;

(3) wherein the first group III nitride wafer's edge and the second group III nitride wafer's edge are each positioned upon
the hidden face of the third group III nitride wafer of the second layer;

(4) wherein the third group III nitride wafer's edge and the fourth group III nitride wafer's edge are each positioned upon
the hidden face of the second group III nitride wafer of the first layer; and

(5) wherein the crystal lattice orientation at the first face of the seed is identical to the crystal lattice orientation
at the second face of the seed.

US Pat. No. 9,219,137

VERTICAL GALLIUM NITRIDE TRANSISTORS AND METHODS OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A vertical gallium nitride transistor, comprising:
a first semiconductor layer of a first conductivity type comprising a first surface, a second surface opposite to the first
surface, and sidewalls;

a second semiconductor layer of the first conductivity type surrounding the second surface and the sidewalls of the first
semiconductor layer;

a third semiconductor layer of a second conductivity type disposed between the first semiconductor layer and the second semiconductor
layer, the third semiconductor layer separating the first and second semiconductor layers from each other;

a source electrode disposed on the first surface of the first semiconductor layer, the source electrode being electrically
connected to the first semiconductor layer;

a gate electrode disposed on a first surface of the third semiconductor layer between the first and second semiconductor layers;
a drain electrode, wherein the second semiconductor layer is disposed on a first surface of the drain electrode; and
a current blocking layer disposed between the drain electrode and the second semiconductor layer, the current blocking layer
comprising a lower surface in direct contact with the drain electrode and an upper surface that is in direct contact with
the second semiconductor layer,

wherein the first semiconductor layer, the third semiconductor layer, and the second semiconductor layer comprise a semiconductor
structure.

US Pat. No. 9,585,214

LED DRIVING CIRCUIT FOR CONTINUOUSLY DRIVING LED, LED LIGHTING DEVICE COMPRISING SAME AND DRIVING METHOD

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) driving circuit comprising:
an LED driving module configured to:
provide a first driving voltage to an LED light emitting module comprising a first LED group to an n-th LED group, wherein
n being an integer which is equal to or larger than 2, and

sequentially drive the first LED group to the n-th LED group depending on a voltage level of the first driving voltage; and
a second driving voltage providing module configured to:
store some of the first driving voltage; and
selectively provide a second driving voltage to some LED groups other than at least the first LED group to an m-th LED group
among the LED groups in a (Vfm) compensation section, wherein 1?m?n?1, according to a control of the LED driving module,

wherein the LED driving module is configured to:
detect an operating state of the m-th LED group and when the m-th LED group is not normally operated,
determine that the m-th LED group enters the (Vfm) compensation section, and

further determine that the m-th LED group is separated from the (Vfm) compensation section when the m-th LED group is normally operated again, and

wherein the first driving voltage has a voltage value that changes over time with a minimum voltage value that is less than
or equal to (Vf1) and a maximum voltage value that is greater than or equal to (Vfn).

US Pat. No. 9,466,481

ELECTRONIC DEVICE AND EPITAXIAL MULTILAYER WAFER OF GROUP III NITRIDE SEMICONDUCTOR HAVING SPECIFIED DISLOCATION DENSITY, OXYGEN/ELECTRON CONCENTRATION, AND ACTIVE LAYER THICKNESS

SixPoint Materials, Inc.,...

1. An epitaxial multi-layer wafer for fabricating electronic devices comprising (i) a group III nitride substrate of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1) having a first side and a second side opposite to the first side and (ii) an active layer of Ga1-x2-y2Alx2Iny2N (0?x2?1, 0?y2?1) on the first side of the group III nitride substrate, wherein:
(a) a dislocation density of the group III nitride substrate is less than about 105 cm?2;

(b) the group III nitride substrate is selected from the group consisting of (i) a group III nitride substrate having an electron
concentration higher than about 1018 cm?3 and (ii) a group III nitride substrate having an oxygen concentration higher than about 1018 cm?3;

(c) the group III nitride substrate is fabricated from a bulk crystal of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1) grown in supercritical ammonia;

(d) the active layer is an epitaxially deposited layer selected from the group consisting of (i) an active layer having an
electron concentration lower than about 1018 cm?3 and (ii) an active layer having an oxygen concentration lower than about 1018 cm?3;

(e) the active layer has a thickness sufficiently large that a depletion region which is formed in the active layer after
fabricating the electronic device with a first electrode on the first side of the wafer and a second electrode on the second
side of the wafer is outside of the substrate at any applied voltage within an operation range of the electronic device; and

(f) a transition layer of Ga1-x3-y3Alx3Iny3N (0?x3?1, 0?y3?1) resides between the substrate and the active layer, wherein a first side of the transition layer has a
crystal lattice matched to a crystal lattice of the first side of the substrate, wherein a second side of the transition layer
has a crystal lattice matched to a crystal lattice of a first side of the active layer, and wherein the transition layer has
a composition that gradually changes from the first side of the transition layer to the second side of the transition layer.

US Pat. No. 9,419,186

LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) chip, comprising:
a semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second
conductivity-type semiconductor layer;

a wavelength converting layer disposed directly on a side surface of the semiconductor stacked structure;
a first insulating layer disposed on the semiconductor stacked structure;
a second insulating layer disposed on the first insulating layer;
a first electrode disposed on the semiconductor stacked structure; and
a second electrode disposed on the semiconductor stacked structure and electrically connected with the second conductivity-type
semiconductor layer,

wherein:
the first insulating layer comprises a distributed Bragg reflector;
at least a portion of a side surface of the second insulating layer contacts the wavelength converting layer;
the first electrode is electrically connected with the first conductivity-type semiconductor layer; and
the first insulating layer contacts a side surface of the second electrode and a side surface of the active layer.

US Pat. No. 9,287,241

LIGHT EMITTING DEVICE AND LCD BACKLIGHT USING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
at least one blue light emitting diode (LED) chip;
at least one red LED chip; and
at least one phosphor for emitting green light using light emitted from the blue LED chip,
wherein the phosphor comprises a phosphor expressed in at least one of the following chemical formulas:
a(MIO)b(MIIO)c(MIIIA)d(MIII2O)e(MIV2O3)f(MVoOp)g(SiO2)h(MVIxOy)  

wherein MI is at least one element selected from the group consisting of Pb and Cu, MII is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn, MIII is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag, MIV is at least one element selected from the group consisting of B, Al, Ga and In, MV is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf, MVI is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,
Er, Tm, Yb and Lu, A is at least one element selected from the group consisting of F, Cl, Br and I, and

wherein a, b, c, d, e, f, g, h, o, p, x and y are set in a range of 0?a?2, 0 1?o?2, 1?p?5, 1?x?2 and 1?y?5;

(A1-x-yEuxMIy)(B2-yMIIy)S4  

wherein A is at least one element selected from the group consisting of Ba, Sr and Ca, B is at least one element selected
from the group consisting of Al, Ga and In, MI is at least one rare earth element selected from the group consisting of Sc, Y, La, Gd and Lu, MII is at least one element selected from the group consisting of Mg, Zn and Be, and

wherein x and y are set in a range of 0.005 (A1-x-yEux)(MI0.5MII0.5)y)B2S4  

wherein A is at least one element selected from the group consisting of Ba, Sr and Ca, B is at least one element selected
from the group consisting of Al, Ga and In, MI is at least one rare earth element selected from the group consisting of Sc, Y, La, Gd and Lu, MII is at least one element selected from the group consisting of Li, Na and K, and

wherein x and y are set in a range of 0.005

US Pat. No. 9,263,567

NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR HAVING A CHANNEL FORMING STACK

Seoul Semiconductor Co., ...

1. A normally off nitride-based transistor, comprising:
a source electrode and a drain electrode;
a channel layer comprising a charge transfer path between the source electrode and the drain electrode;
a gate electrode configured to control charge transfer of the channel layer;
a channel-forming stack comprising a junction structure of a first conductivity-type nitride semiconductor layer and an intrinsic
nitride semiconductor layer configured to generate a fixed turn-off blocking electric field in a channel;

a switch semiconductor layer disposed in a first region on the channel forming stack;
a gate dielectric layer and a gate electrode disposed in a second region on the switch semiconductor layer;
a source electrode disposed in a third region on the switch semiconductor layer; and
a drain electrode disposed in a fourth region on the channel forming stack,
wherein:
the channel layer comprises a junction structure of a first conductivity-type nitride semiconductor layer and an intrinsic
nitride semiconductor layer such that a fixed turn-off blocking electric field is to be generated in the channel layer between
the source electrode and the drain electrode in a turn-off state;

the intrinsic nitride semiconductor layer comprises an intrinsic GaN semiconductor layer, and the first conductivity-type
nitride semiconductor layer comprises a p-type GaN semiconductor layer disposed on the intrinsic GaN semiconductor layer;

the switch semiconductor layer comprises:
a first conductivity-type first semiconductor layer disposed on the channel forming stack;
a second conductivity-type second semiconductor layer disposed on the first semiconductor layer; and
a first conductivity-type third semiconductor layer disposed on the second semiconductor layer; and
an inclined plane is disposed from the third semiconductor layer to the first semiconductor layer.

US Pat. No. 9,543,393

GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

SixPoint Materials, Inc.,...

1. A group III nitride wafer having composition of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1), wherein the wafer is formed by roughening both surfaces using a mechanical process and the surfaces are
chemically treated to visually distinguish, without instrumentation, one surface from another after said roughening and before
chemically-mechanically polishing the wafer.

US Pat. No. 9,507,204

BAFFLED MICRO-OPTICAL ELEMENTS FOR THIN LIQUID CRYSTAL DISPLAY BACKLIGHT UNITS

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) backlight unit, comprising:
a housing;
a LED array disposed on a bottom surface of the housing, the LED array comprising LEDs;
an optical film stack disposed on the LED array;
a baffled micro-optical element (BMOE) disposed between the LED array and the optical film stack,
wherein:
the thickness of the backlight unit is 12 mm or less;
a first portion of light emitted from each LED of the LED array is configured to directly contact the optical film stack and
a second portion of light emitting from each LED of the LED array is configured to be reflected off of the BMOE and onto the
optical film stack;

the first and second portions of light combine to create surface illuminance on the optical film stack with uniformity greater
than 70%;

the BMOE comprises an optical sheet comprising conical reflectors, the conical reflectors are respectively disposed directly
over each of the LEDs in a direction substantially perpendicular to a horizontal extending direction of the bottom surface
of the housing; and

each conical reflector comprises:
a tip being the closest part of the conical reflector to each LED;
a hole disposed in the tip thereof; and
a center diffuser disposed in the hole.

US Pat. No. 9,074,751

LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. A lighting apparatus, comprising:
a light emitting diode (LED);
a light reflector having a convex outer surface, and a concave inner surface that is configured to reflect light emitted from
the LED;

an illumination width adjusting part to adjust the distance between first and second edges of the light reflector by compressing
opposing side portions of the light reflector; and

a light-changing film disposed directly on the inner surface of the light reflector and configured change the wavelength of
the light emitted from the LED,

wherein the light changing film is disposed between the inner surface of the light reflector and the LED, such that substantially
all of the reflected light passes through the light changing film before being reflected, and

wherein ends of the light changing film are spaced apart from the light reflector by an air gap, when the light reflector
is not compressed by the illumination width adjusting part.

US Pat. No. 9,059,386

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
an LED chip;
a first lead frame and a second lead frame electrically connected to the LED chip and separated by a space; and
a housing disposed on the first lead frame and the second lead frame, the housing comprising:
an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion
of the second lead frame; and

an internal housing disposed in the space, the internal housing covering a first top portion of the first lead frame and a
first top portion of the second lead frame, and the internal housing exposing at least a second top portion of at least one
of the first lead frame and the second lead frame.

US Pat. No. 9,219,196

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A method of fabricating a light emitting diode (LED), the method comprising:
forming a semiconductor stack over a first substrate, the semiconductor stack comprising a first conductive type semiconductor
layer, an active layer, and a second conductive type semiconductor layer;

patterning the second conductive type semiconductor layer and the active layer to form a plurality of contact holes exposing
at least a portion of the first conductive type semiconductor layer;

forming a protective insulation layer covering a sidewall of the semiconductor stack;
forming a first pad and a second pad over the semiconductor stack; and
forming a dummy bump to provide a heat passage for discharging heat from the semiconductor stack,
wherein the first pad is electrically connected to the first conductive type semiconductor layer via the plurality of contact
holes,

the second pad is electrically connected to the second conductive type semiconductor layer.

US Pat. No. 9,351,355

ILLUMINATION SYSTEM HAVING COLOR TEMPERATURE CONTROL AND METHOD FOR CONTROLLING THE SAME

Seoul Semiconductor Co., ...

1. An illumination system, comprising:
a power supply unit; and
a light emitting apparatus driven by power supplied from the power supply unit,
wherein the light emitting apparatus comprises:
a first light emitting portion and a second light emitting portion disposed in a same light emitting package and configured
to be independently driven to emit output light; and

a controller configured to control at least one of a color temperature and a luminous flux of the output light by controlling
operations of the first and second light emitting portions, and

wherein the controller is configured to generate a first control signal based on luminous flux control data and a second control
signal based on color temperature control data,

and the controller is configured to output the first control signal to control an output luminous flux of the first light
emitting portion and output the second control signal to control a color temperature of the second light emitting portion.

US Pat. No. 9,224,935

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
at least one LED chip;
a first lead frame and a second lead frame electrically connected to the at least one LED chip and separated by a space; and
a housing disposed on the first lead frame and the second lead frame, the housing comprising:
an external housing surrounding a cavity, the cavity exposing a first portion of the first lead frame and a first portion
of the second lead frame; and

an internal housing disposed within the cavity, the internal housing comprising a first bridge extending from inner side surfaces
of the external housing to intersect the space.

US Pat. No. 9,142,688

GALLIUM NITRIDE-BASED DIODE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A gallium nitride (GaN)-based diode, comprising:
an intrinsic GaN-based semiconductor layer;
GaN-based semiconductor layers having a first conductivity type, a first surface thereof disposed on a first surface of the
intrinsic GaN-based semiconductor layer;

a first electrode disposed on a second surface of the intrinsic GaN-based semiconductor layer opposite to the first surface
thereof;

a second electrode disposed on a second surface of the GaN-based semiconductor layers opposite to the first surface thereof;
and

voltage-resistant layers having a second conductivity type and disposed in regions of the intrinsic GaN-based semiconductor
layer contacting edges of the first electrode.

US Pat. No. 9,209,162

LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
at least three light emitting diodes having different peak emission wavelengths to emit primary light in a blue, green, or
red wavelength range;

a molded part encapsulating the at least three light emitting diodes; and
a wavelength-converter to convert the primary light into secondary light in a visible light wavelength range, the wavelength-converter
being disposed in the molded part,

wherein the wavelength-converter comprises a mixture of phosphors comprising a first phosphor to emit blue light, a second
phosphor to emit green to yellow light, and a third phosphor to emit yellow to red light,

wherein the wavelength converter comprises the first phosphor comprising a peak emission wavelength between 450 and 520 nm,
the second phosphor comprising a peak emission wavelength between 500 and 570 nm, the third phosphor comprising a peak emission
wavelength between 570 and 680 nm, and mixtures thereof, and

wherein each phosphor comprises more than one phosphor component, each phosphor component comprising a different peak emission
wavelength in the corresponding wavelength range.

US Pat. No. 9,059,381

LIGHT EMITTING DEVICE HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
a substrate;
a semiconductor stack disposed on the substrate, the semiconductor stack comprising a first semiconductor layer, an active
layer and a second semiconductor layer;

a first wavelength converting layer covering a top of the semiconductor stack; and
a second wavelength converting layer disposed on a portion of a top surface of the first wavelength converting layer,
wherein:
a width of the second wavelength converting layer is less than a width of the first wavelength converting layer and a width
of the active layer; and

the sides of the second wavelength converting layer are inclined in relation to the top surface of the first wavelength converting
layer.

US Pat. No. 9,457,713

LED ILLUMINATOR IN HOOD OF VEHICLE

Seoul Semiconductor Co., ...

1. A light emitting device (LED) illuminator configured to illuminate an inner space enclosed by a vehicle hood, the LED illuminator
comprising:
a protection frame configured to be arranged in an area enclosed by the hood; and
an LED module movably connected to the protection frame, the LED module comprising a light emitting portion and a light non-emitting
portion,

wherein the light emitting portion is configured to be concealed into the protection frame in a first position and exposed
to the outside of the protection frame in a second position,

wherein the light emitting portion and the light non-emitting portion are disposed opposite each other around a hinged axis,
and

wherein the light emitting portion is configured to be rotated with respect to the protection frame from the first position
to the second position in response to opening of the hood, and rotated with respect to the protection frame from the second
position to the first position in response to closing of the hood.

US Pat. No. 9,196,785

LIGHT EMITTING DEVICE HAVING SURFACE-MODIFIED QUANTUM DOT LUMINOPHORES

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
a first light emitting diode; and
a surface-modified luminophore configured to absorb light emitted from the first light emitting diode and configured to emit
light having a different wavelength from the absorbed light, the surface-modified luminophore comprising:

a quantum dot (QD) luminophore; and
a fluorinated coating disposed on the QD luminophore,
wherein:
the QD luminophore comprises a II-VI group compound semiconductor or a III-V group compound semiconductor; and
the fluorinated coating comprises a fluorinated barrier layer formed by fluorinating the QD luminophore using a fluorine-functionalized
organosilane comprising the general formula Si(OR)3X, where R is an alkyl group, and X is a fluorine-functionalized organic ligand.

US Pat. No. 9,918,360

LIGHT-EMITTING DIODE LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. A light-emitting diode lighting apparatus, comprising:
An alternating current (AC) voltage supply configured to supply AC voltage;
a rectification unit configured to rectify the AC voltage;
a light-emitting unit comprising light-emitting groups, the light-emitting unit configured to receive the rectified AC voltage
supplied from the rectification unit and emit light from the light-emitting groups; and

a constant current unit comprising current diodes branched from nodes respectively disposed between the light-emitting groups
of the light-emitting unit and distribution resistors connected to each of the current diodes, the constant current unit configured
to set a current of each of the light-emitting groups,

wherein the light-emitting groups of the light-emitting unit are connected to each other in series, and
wherein current values of the current diodes are set to decrease with decreasing distance from an nth node, to which an output voltage of the rectification unit is applied, to an n+mth node, from which the corresponding current diode is branched,

wherein resistance values of the distribution resistors increase with decreasing distance from an nth node, to which an output voltage of the rectification unit is applied, to an n+mth node from which the corresponding distribution resistor is branched,

wherein power consumed by each of the distribution resistors is the same,
wherein n and m are positive integers.

US Pat. No. 9,203,006

LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:
a first lead frame and a second lead frame spaced apart from each other, the first and second lead frames each comprising
a first portion, and a second portion disposed on the first portion;

a light-emitting diode chip disposed on the second portion of the first or second lead frame; and
a resin at least partially covering the first and second lead frames,
wherein the first and second portions of the first lead frame have different planar shapes from each other, the first and
second portions of the second lead frame have different planar shapes from each other, and the second portion of the first
or second lead frame comprises a first fixing element, and

wherein a first space is disposed between the first portion of the first lead frame and the first portion of the second lead
frame, and the first fixing element is disposed on the first space.

US Pat. No. 9,807,828

ALTERNATING CURRENT-DRIVEN LIGHT EMITTING ELEMENT LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. An LED lighting apparatus, comprising:
a rectification circuit configured to rectify a modulated AC voltage to generate a drive voltage;
an LED driving module connected to a plurality of LED groups and configured to apply a drive current to at least one of the
plurality of LED groups according to a level of the drive voltage; and

a dimming level detector configured to detect a dimming level corresponding to the drive voltage,
wherein the LED driving module is configured to compare the detected dimming level to a reference value and block the drive
current based on a result of the comparison.

US Pat. No. 10,051,702

DRIVING CIRCUIT AND LIGHTING APPARATUS FOR LIGHT EMITTING DIODE

Seoul Semiconductor Co., ...

1. A driving circuit for a light emitting diode connected to a TRIAC dimmer modulating an input AC voltage depending on a selected dimming level, comprising:a rectifier full-wave rectifying the modulated AC voltage output from the TRIAC dimmer to generate and output a driving voltage;
a driving module receiving the driving voltage of the rectifier to detect the selected dimming level and driving a plurality of light emitting diode groups depending on the detected dimming level; and
a bleeder circuit providing a bleeder current to the TRIAC dimmer, the bleeder circuit comprising a bleeder resistor, a bleeder current sensing resistor, a switch, and a plurality of comparators connected to each other,
wherein the bleeder circuit detects a driving current for the light emitting diode flowing through at least one of the plurality of light emitting diode groups and controls a magnitude in the bleeder current based on the detected driving current for the light emitting diode, and
wherein an inversion input terminal of a first comparator of the comparators is connected to the driving module.

US Pat. No. 10,045,412

BACKLIGHT UNIT USING MULTI-CELL LIGHT EMITTING DIODE

Seoul Semiconductor Co., ...

1. A backlight unit comprising:a backlight module comprising:
a printed circuit board including blocks and multi junction technology light emitting diodes (MJT LEDs) disposed on the blocks, respectively; and
a backlight control module generating a signal for drive control of each of the blocks,
wherein:
each block comprises at least one MJT LED,
the backlight control module comprises a drive controller for On/Off control and dimming control of each block, and
each MJT LED comprises:
a plurality of light emitting cells comprising a first light emitting cell and a second light emitting cell, the plurality of light emitting cells being disposed on a single growth substrate separated from each other, each of the light emitting cells comprising: a lower semiconductor layer, an upper semiconductor layer disposed on the lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers;
a reflective layer disposed on the first light emitting cell and electrically connected to the first light emitting cell;
an upper electrode electrically connecting the first light emitting cell to the second light emitting cell;
a first insulation layer insulating the upper electrode from a side surface of the first light emitting cell; and
a first pad and a second pad disposed above the upper electrode,
wherein the plurality of light emitting cells are connected in series to each other between an input light emitting cell and an output light emitting cell,
wherein the first pad is electrically connected to the input light emitting cell and the second pad is electrically connected to the output light emitting cell.

US Pat. No. 9,685,327

ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER WAFER FOR MAKING IT

SixPoint Materials, Inc.,...

1. A method of making a multi-layer wafer comprising
(a) epitaxially depositing from vapor phase an active layer of Ga1-x2-y2Alx2Iny2N (0?x2?1, 0?y2?1) at a first side of a substrate of Ga1-x1-y1Alx1Iny1N (0?x1?1, 0?y1?1) and epitaxially depositing-a transition layer, wherein the transition layer comprises Ga1-x3-y3Alx3Iny3N (0?x3?1, 0?y3?1) and wherein the transition layer resides between the first side of the substrate and the active layer,

(b) wherein said substrate was formed by an ammonothermal method and said substrate has a second side opposite to the first
side,

(c) wherein the active layer and the transition layer are deposited to a combined thickness suitable to form an electronic
device on the multi-layer wafer, said combined thickness being greater than a depth of a depletion region which is formed
in the active layer after fabricating the electronic device with a first electrode on a top surface of the active layer and
a second electrode on the second side of the substrate,

(d) wherein the substrate has an oxygen concentration or an electron concentration greater than 1018 cm?3 and

(e) wherein said vapor phase has a sufficiently low concentration of oxygen or concentration of electrons to provide an oxygen
concentration in the active layer of less than 1018 cm?3.

US Pat. No. 9,728,687

QUANTUM PLATELET CONVERTER

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
a light emitting diode (LED) chip that emits light of a first wavelength;
an encapsulant disposed over the LED chip; and
one or more downconverters embedded in the encapsulant,
wherein each downconverter includes a quasi-two dimensional quantum nanoplatelet structure that interacts with the emitted
light of the first wavelength from the LED chip to produce light of a second wavelength that is longer than the first wavelength,

wherein the quasi-two dimensional quantum nanoplatelet structure of the downconverter includes a core material covered by
at least one nanoplatelet shell, and

wherein the at least one nanoplatelet shell has a length and a width larger than a height,
wherein the downconverter includes an on-chip downconverter that is formed as a part of the LED chip.

US Pat. No. 9,070,851

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a semiconductor stack comprising a first conductive type semiconductor layer, an active layer, and a second conductive type
semiconductor layer;

a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact
holes exposing the first conductive type semiconductor layer;

a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first
conductive type semiconductor layer via the plurality of contact holes;

a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second
conductive type semiconductor layer; and

a protective insulation layer covering a sidewall of the semiconductor stack.

US Pat. No. 9,538,599

LED LIGHTING APPARATUS WITH IMPROVED FLICKER INDEX

Seoul Semiconductor Co., ...

1. An LED lighting apparatus, comprising:
a rectification unit connected to an alternating current (AC) power source and outputting a first rectified voltage as a first
drive voltage to a light-emitting diode (LED) light-emitting unit through full-wave rectification of an AC voltage;

the LED light-emitting unit comprising a first LED group to an nth LED group and configured to emit light when receiving the first drive voltage from the rectification unit, n being a positive
integer of 2 or more; and

an LED drive controller configured to detect an LED drive current flowing through the LED light emitting unit or a constant
current switch connected to the LED light emitting unit and configured to control sequential driving of the first LED group
to the nth LED group, based on the detected LED drive current,

wherein the LED drive controller is configured to set an LED drive current in each of operation sections to be inversely proportional
to a total number of LEDs operated to emit light in each of the operation sections such that a difference between light output
of the LED light-emitting unit in each of the operation zones does not exceed a predetermined light output deviation, and
is configured to control the LED drive current to a constant drive current in a corresponding operation section according
to the set LED drive current in each of the operation sections.

US Pat. No. 9,848,470

LED DRIVING CIRCUIT USING DOUBLE BRIDGE DIODE AND LED ILLUMINATION DEVICE COMPRISING SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) driving circuit comprising:
a first rectifying module connected to an alternating current (AC) power supply, the first rectifying module configured to
full-wave-rectify an applied AC voltage and provide a first rectified voltage that is full-wave-rectified as a first driving
voltage to an LED light emitting module; and

a second driving voltage providing module connected to the AC power supply in parallel with the first rectifying module, the
second driving voltage configured to full-wave-rectify the applied AC voltage to generate a second rectified voltage, charge
energy using the second rectified voltage in a charging section, and provide a second driving voltage to the LED light emitting
module in a compensation section, wherein the compensation section is a section in which a voltage level of the first rectified
voltage is less than a first forward voltage level (Vf1).

US Pat. No. 9,730,290

DIMMABLE AC DRIVEN LED ILLUMINATING APPARATUS

Seoul Semiconductor Co., ...

1. A dimmable alternating current (AC) driven light emitting diode (LED) illuminating apparatus comprising:
a rectifying unit configured to full-wave rectify controlled AC power to generate a driving voltage;
a dimming level detecting unit configured to detect a selected dimming level and output a detected dimming level signal;
LED groups that each comprise at least one LED; and
an LED driving module configured to detect a voltage level of the driving voltage and sequentially drive the LED groups according
to the detected voltage level, by constantly controling an LED driving current applied to a driven LED group, based on the
dimming level signal, wherein the LED driving module comprises an automatic sensing circuit configured to determine whether
a dimming circuit is connected, to automatically select whether a dimming control function is enabled or disabled,

wherein the LED driving module determines a reference value of the LED driving current in proportion to a magnitude of the
dimming level signal and controls a maximum value of the LED driving current based on the determined reference value.

US Pat. No. 10,091,850

BACKLIGHT UNIT USING MULTI-CELL LIGHT EMITTING DIODE

Seoul Semiconductor Co., ...

1. A backlight unit comprising:a backlight module comprising:
a printed circuit board including blocks and multi junction technology light emitting diodes (MJT LEDs) disposed on the blocks, respectively; and
a backlight control module generating a signal for drive control of each of the blocks,
wherein:
each block comprises at least one MJT LED,
the backlight control module comprises a drive controller for On/Off control and dimming control of each block, and
each MJT LED comprises:
a plurality of light emitting cells comprising a first light emitting cell and a second light emitting cell, the plurality of light emitting cells being disposed on a single growth substrate separated from each other, each of the light emitting cells comprising: a lower semiconductor layer, an upper semiconductor layer disposed on the lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers;
a reflective layer disposed on the first light emitting cell and electrically connected to the first light emitting cell;
an upper electrode electrically connecting the first light emitting cell to the second light emitting cell;
a first insulation layer insulating the upper electrode from a side surface of the first light emitting cell; and
a first pad and a second pad disposed above the upper electrode,
wherein the plurality of light emitting cells are connected in series to each other between an input light emitting cell and an output light emitting cell,
wherein the first pad is electrically connected to the input light emitting cell and the second pad is electrically connected to the output light emitting cell.

US Pat. No. 9,685,582

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A method of fabricating a light-emitting device, the method comprising:
forming a first resin comprising a phosphor inside a cavity of a package body on which a light-emitting diode chip is mounted;
measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor;
correcting the color coordinates by forming a second resin on the first resin; and
curing the first resin and the second resin after correcting the color coordinates,
wherein the first resin is not fully cured before measuring and correcting the color coordinates.

US Pat. No. 9,591,709

ILLUMINATION APPARATUS INCLUDING SEMICONDUCTOR LIGHT EMITTING DIODES

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a rectifier connected to an alternating current (AC) power source and configured to perform a full-wave rectification for
an applied AC voltage, and configured to provide a rectified voltage which is full-wave rectified to a light emitting unit
as a driving voltage,

the light emitting unit comprising a first light emitting group to an n-th light emitting group, n being a positive integer
of at least two, and configured to emit light by receiving the driving voltage from the rectifier;

a control signal generator configured to generate a switch control signal for controlling a series and parallel connection
relationship between the first light emitting group to the n-th light emitting group, and generate a current control signal
for controlling a operation of a current controller according to a voltage level of the driving voltage;

a switch unit configured to perform an on or off operation according to the switch control signal, to selectively transfer
the driving voltage; and

the current controller comprising a first driving current controller to an n-th driving current controller connected to the
first light emitting group to the n-th light emitting group, respectively, the first driving current controller to the n-th
driving current controller configured to be selectively activated and to control a magnitude of a driving current of a light
emitting element according to the current control signal.

US Pat. No. 9,123,560

LIGHT EMITTING DEVICE HAVING IMPROVED COLOR RENDITION

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
a first light emitting diode chip configured to emit light in a red light wavelength;
a second light emitting diode chip configured to emit light in a different red light wavelength from the wavelength of the
first light emitting diode chip; and

a plurality of third light emitting diode chips disposed around the first and second light emitting diode chips,
wherein each of the plurality of third light emitting diode chips comprises an active layer of a quantum well structure having
alternately stacked well layers and barrier layers, the well layers having at least two different thicknesses.

US Pat. No. 9,683,709

LED LIGHTING APPARATUS

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) lighting apparatus comprising:
an LED module;
a heat dissipation member; and
a connection member mechanically and thermally connecting the LED module and the heat dissipation member,
wherein the heat dissipation member comprises a reflective surface for reflecting light emitted from the LED module;
wherein the LED module comprises:
a printed circuit board;
LED chips disposed directly on the printed circuit board; and
a wavelength conversion layer disposed directly on the LED chips by conformal coating; and
wherein the connection member is connected at a first distal end thereof to the heat dissipation member and connected at a
second distal end thereof to a reinforcing support part, the first and second distal ends extending away from each other in
relation to an extending plane of the connection member, each of the first and second distal ends comprising a hook shape.

US Pat. No. 9,530,942

SLIM LED PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a first lead frame and a second lead frame separated from each other;
an LED chip disposed on the first lead frame and electrically connected with the second lead frame; and
a resin covering at least portions of surfaces of the first and second lead frames,
wherein:
at least one of the first and second lead frames comprises a first side facing the other lead frame and a second side opposite
the first side;

the first lead frame comprises a first groove disposed on a lower surface thereof, and the second lead frame comprises a second
groove disposed on the lower surface thereof;

each of the first and second grooves is open only on the lower surfaces of the first and second lead frames, respectively;and
a depth of the first groove is equal to a depth of the second groove.

US Pat. No. 9,461,225

LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:
first and second lead frames spaced apart from each other, the first and second lead frames each comprising a top surface,
an opposing bottom surface, and sidewalls arranged between the top surface and the bottom surface thereof,

wherein:
at least one of the first and second lead frames comprise three inset sidewalls that at least partially define a fixing space,
the fixing space undercutting at least one of the first lead frame and second lead frame;

a light-emitting diode chip arranged on the first surface of the first or second lead frame;
a resin part disposed in the fixing space to support the first and second lead frames; and
the first and second lead frames exposed to the outside through bottom surface.

US Pat. No. 9,614,129

LIGHT EMITTING DEVICE HAVING SURFACE-MODIFIED LUMINOPHORES

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:
a light-emitting diode; and
a surface-modified luminophore configured to absorb light emitted from the light-emitting diode and configured to emit light
having a different wavelength from the absorbed light,

wherein the surface-modified luminophore comprises a fluoride luminophore comprising a manganese activator and a fluorine
compound fixed to the luminophore, the fluoride luminophore selected from the group consisting of K2SiF6, Na2SiF6, Rb2SiF6, K2GeF6, Na2GeF6, and Rb2GeF6.

US Pat. No. 9,576,940

LIGHT EMITTING DEVICE AND LCD BACKLIGHT USING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting apparatus, comprising:
a first light source to emit blue light comprising a first spectrum with a first peak wavelength;
a second light source to be excited by the blue light and emit green light comprising a second spectrum with a second peak
wavelength;

a third light source to emit red light comprising a third spectrum with a third peak wavelength; and
an RGB color filter, the RGB color filter producing wavelength response areas respectively corresponding to the first spectrum
of the first light source, the second spectrum of the second light source, and the third spectrum of the third light source,

wherein the wavelength response area of the RGB color filter corresponding to the second spectrum of the second light source
substantially covers the second spectrum with the second peak wavelength,

wherein the second light source comprises at least one first phosphor, the at least one first phosphor comprising a phosphor
expressed by at least one of the following chemical formulae:

a(MIO)b(MIIO)c(MIIIA)d(MIII2O)e(MIV2O3)f(MVoOp)g(SiO2)h(MVIxOy)  

wherein MI is at least one element selected from the group consisting of Pb and Cu, MII is at least one element selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn, MIII is at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Au and Ag, MIV is at least one element selected from the group consisting of B, Al, Ga and In, MV is at least one element selected from the group consisting of Ge, V, Nb, Ta, W, Mo, Ti, Zr and Hf, MVI is at least one element selected from the group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho,
Er, Tm, Yb and Lu, A is at least one element selected from the group consisting of F, Cl, Br and I, and

wherein a, b, c, d, e, f, g, h, o, p, x and y are set in a range of 0?a?2, 0 0?h?5, 1?o?2, 1?p?5, 1?x?2 and 1?y?5; and

(A1-x-yEux)(MI0.5MII0.5)y)B2S4  

wherein A is at least one element selected from the group consisting of Ba, Sr and Ca, B is at least one element selected
from the group consisting of Al, Ga and In, MI is at least one rare earth element selected from the group consisting of Sc, Y, La, Gd and Lu, MII is at least one element selected from the group consisting of Li, Na and K, and

wherein x and y are set in a range of 0.005

US Pat. No. 9,543,490

WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME

SEOUL SEMICONDUCTOR CO., ...

1. A light emitting diode (LED) package, comprising:
first and second light emitting cells, each comprising a first semiconductor layer, an active layer and a second semiconductor
layer, wherein the second semiconductor layer and the active layer of each light emitting cell provides a contact region exposing
the first semiconductor layer of each of the light emitting cells;

a first protective insulation layer covering a sidewall of each of the light emitting cells;
a connector located arranged on a first side of the light emitting cells and electrically connecting two adjacent light emitting
cells to each other;

a first bump arranged on the first side of the light emitting cells and electrically connected to the first semiconductor
layer via the contact region of the first light emitting cell;

a second bump arranged on the first side of the light emitting cells and electrically connected to the second semiconductor
layer of the second light emitting cell;

a first contact layer arranged on the exposed first semiconductor layer;
a second contact layer arranged on the second semiconductor layer; and
a second protective insulation layer arranged between the first bump and the first contact layer,
wherein the first semiconductor layer comprises a roughened surface, andwherein each light emitting cell comprises an inclined sidewall.

US Pat. No. 9,673,358

LIGHT EMITTING MODULE

SEOUL SEMICONDUCTOR CO., ...

1. A light emitting module comprising:
a circuit board;
a light emitting diode chip flip-bonded to the circuit board; and
a housing residing on the circuit board and surrounding the light emitting diode chip, wherein the housing has a recess and
a reflective part having a curved structure formed on an inner wall of the recess,

wherein the reflective part comprises two reflective regions including a first reflective portion and a second reflective
portion, the first reflective portion being placed above the second reflective portion, and

wherein the second reflective portion comprises protrusions protruding in a lateral direction of the light emitting diode
chip, the protrusions being arranged at regular intervals along a side surface of the light emitting diode chip.

US Pat. No. 9,640,745

LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode, comprising:
at least one light emitting chip;
a substrate comprising lead frames electrically connected to electrodes of the at least one light emitting chip, the lead
frames comprising a first lead frame enclosing a first side of the substrate and a second lead frame enclosing a second side
of the substrate, the first and second lead frames each comprising upper and lower leads, respectively;

a lens disposed on the substrate and enclosing the at least one light emitting chip;
an oil disposed in the lens and the substrate; and
a heat radiation plate disposed below the substrate,
wherein:
the heat radiation plate comprises an accommodating groove in which the oil is disposed;
the heat radiation plate is coupled to the substrate and the lens in a first region, and comprises a first encapsulation resin
disposed in the first region;

the substrate comprises accommodating holes disposed in the upper leads and in which the oil is disposed; and
the oil contacts outer surfaces and inner surfaces of the upper leads and contacts inner surfaces of the lower leads.

US Pat. No. 9,790,617

GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD

SixPoint Materials, Inc.,...

1. A bulk crystal of group III nitride having a composition of Gax1Aly1In1-x1-y1N (0?x1?1, 0?x1+y1?1) and containing a seed crystal having a composition of Gax2Aly2In1-x2-y2N (0?x2?1, 0?x2+y2?1), wherein the bulk crystal has a thickness greater than 1 mm and the bulk crystal has fewer cracks within
the bulk crystal above the seed crystal's edge than a comparative bulk crystal grown under otherwise identical conditions
but grown using a square seed having the same surface area as said seed crystal but having m-plane and a-plane walls.

US Pat. No. 9,743,479

LED LIGHTING APPARATUS WITH IMPROVED FLICKER INDEX

Seoul Semiconductor Co., ...

1. An LED lighting apparatus, comprising:
a light-emitting diode (LED) light-emitting device configured to emit light when driven by a voltage, the LED light-emitting
device comprising a first LED group to an nth LED group, n being a positive integer of 2 or more;

a rectifier connected to an alternating current (AC) power source and configured to output a first rectified voltage as a
first drive voltage to the LED light-emitting device through full-wave rectification of an AC voltage; and

an LED drive controller configured to detect the first drive voltage applied to the LED light emitting device and configured
to control sequential driving of the first LED group to the nth LED group, based on the detected first drive voltage,

wherein the LED drive controller is configured to set an LED drive current in each of operation sections to be inversely proportional
to a total number of LEDs operated to emit light in each of the operation sections such that a difference between light output
of the LED light-emitting device in each of the operation sections does not exceed a predetermined light output deviation,
and is configured to control the LED drive current to maintain a constant drive current in a corresponding operation section
according to the set LED drive current in each of the operation sections.

US Pat. No. 9,674,912

LED LUMINESCENCE APPARATUS AND METHOD OF DRIVING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) driving circuit configured to drive LED units, the driving circuit comprising:
a rectification circuit unit to receive an alternating current (AC) power voltage and rectify the AC power voltage to output
a unidirectional ripple voltage;

a pulse-width modulation (PWM) signal generation unit to generate PWM decision signals;
switch units, a first end of each switch unit connected to a cathode of one of the LED units;
constant current control circuit units, a first end of each constant current control circuit unit connected to a second end
of a respective switch unit, to receive a current therefrom; and

a current control circuit unit configured to receive current from the switch units, and generate switching control signals
for the respective switch units to sequentially drive the constant current control circuit units,

wherein the PWM signal generation unit is configured to sequentially drive the LEDs according to the PWM decision signals,
and

wherein each of the constant current control circuit units is configured to output a current control signal to the respective
switch unit to control a magnitude of the received current to have a specific value.

US Pat. No. 9,576,939

LIGHT EMITTING DEVICE AND LIGHTING SYSTEM HAVING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting device comprising:
a first light emitting portion for emitting daylight with a high color temperature of 6000K or more; and
a second light emitting portion for emitting warm white light at a color temperature of 3000K or less, and
a molding portion encapsulating the first light emitting portion and the second light emitting portion in common,
wherein each of the first and second light emitting portions comprises a light emitting diode chip and a phosphor,
wherein the first and second light emitting portions are disposed in one package, the one package comprising a housing, lead
frames protruding from sides of the housing, and a heat sink passing through the housing, the heat sink comprising protruding
portions on its upper surface,

wherein the protruding portions each comprise a top surface extending substantially parallel to the upper surface of the heat
sink, the top surfaces of the protruding portions being raised above the upper surface of the heat sink in a direction extending
away from a bottom surface of the light emitting device,

wherein the light emitting diode chips of the first and second light emitting portions are driven independently, the light
emitting diode chips are disposed on the top surfaces of the protruding portions of the heat sink, respectively, and the light
emitting diode chips are encapsulated by a compound comprising the phosphor and a resin, the compound being disposed only
on the top surfaces of the protruding portions,

wherein the molding portion covers side surfaces of the protruding portions, the side surfaces of the protruding portions
respectively connecting the top surfaces thereof and the upper surface of the heat sink, and

wherein the phosphor is expressed by Chemical Formula 3 as follows:
a(MIO).b(MIIO).c(Al2O3).d(MIII2O3).e(MIVO2).f(MVxOy)  

wherein the M I includes Cu, or Pb and Cu, the MII includes at least one selected from a group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd and Mn, the MIII includes at least one selected from a group consisting of B, Ga and In, the MIV includes at least one selected from a group consisting of Si, Ge, Ti, Zr and Hf, the MV includes at least one selected from a group consisting of Bi, Sn, Sb, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er,
Tm, Yb and Lu, 0

US Pat. No. 9,574,737

ASPHERICAL LED LENS AND LIGHT EMITTING DEVICE INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. An aspherical lens, comprising:
a light entrance plane configured to receive light emitted from a light source; and
a light exit plane configured to radiate the light received by the light entrance plane,
wherein the light exit plane comprises:
semispherical convex portions disposed on an upper surface of the aspherical lens;
a concavely depressed portion comprising an overlapping region where the semispherical convex portions partially overlap each
other at a central axis,

a side portion connected with the semispherical convex portions; and
an upper surface of each of the semispherical convex portions comprises a first flat portion.

US Pat. No. 9,544,484

LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:
a board;
a light emitting diode chip disposed on the board;
a molding part disposed on the board and covering the light emitting diode chip; and
a lens cap disposed on the board and covering the molding part and comprising:
a wall part bonded to the board and enclosing the light emitting diode chip, the wall part having an exterior first side and
an exterior second side facing the exterior first side; and

a lens part disposed above the light emitting diode chip,
wherein an air gap is disposed between the lens cap and the molding part,
wherein the exterior first side of the wall part comprises a first air circulation hole exposing the molding part, and
wherein the exterior second side of the wall part comprises a second air circulation hole exposing the molding part.

US Pat. No. 9,947,717

LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS AND ELECTRODE SPACED APART FROM THE LIGHT EMITTING ELEMENT

Seoul Semiconductor Co., ...

1. A light-emitting device comprising:a growth substrate;
a GaN-based light-emitting element monolithically formed on the growth substrate;
an n-electrode and a p-electrode disposed on the GaN-based light emitting element;
an electrode pad for a power supply, the electrode pad being spaced apart from the light-emitting element and disposed on the growth substrate; and
a wiring electrically connecting the electrode pad and the light emitting element,
wherein the light-emitting element comprises a recessed area, and at least a portion of the electrode pad is disposed in the recessed area of the light-emitting element.

US Pat. No. 9,739,443

LED ILLUMINATION LAMP BULB WITH INTERNAL REFLECTOR

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a substrate;
a first light source and a second light source disposed on a first surface of the substrate;
a cover unit comprising a phosphor and covering the substrate;
a heat sink comprising:
a planar mounting area supporting a second surface of the substrate opposite to the first surface; and
a guide surface extending from the perimeter of the mounting area at an oblique angle;
a reflector disposed between the first light source and the second light source,
wherein the reflector is configured to reflect light emitted by the first light source below the plane of the mounting area
and along the guide surface.

US Pat. No. 9,735,322

LIGHT-EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting element comprising:
a housing;
at least one light emitting diode chip disposed inside the housing;
a molding portion covering the at least one light emitting diode chip;
a first phosphor configured to be excited by light emitted from the at least one light emitting diode chip, the first phosphor
configured to emit green light; and

a second phosphor configured to be excited by light emitted from the at least one light emitting diode chip, the second phosphor
configured to emit red light,

wherein the molding portion comprises:
a first molding portion covering the at least one light emitting diode chip; and
a second molding portion covering the first molding portion, and
wherein:
the second phosphor is disposed in the first molding portion,
the first phosphor is disposed in the second molding portion,
the molding portion has an oxygen gas permeability of 140 cc/m2/day or less, and

the second phosphor is configured to emit red light having a full width at half maximum of 20 nm or less.

US Pat. No. 9,590,149

LIGHTING EMITTING DEVICE

SEOUL SEMICONDUCTOR CO., ...

1. A light emitting device comprising:
a light emitting diode emitting light having a peak wavelength in the range of 415 nm to 435 nm; and
a wavelength conversion unit disposed over the light emitting diode, the wavelength conversion unit configured to convert
a wavelength of the light emitted from the light emitting diode and emit the light with the converted wavelength,

wherein the wavelength conversion unit includes cyan phosphors emitting the light with the converted wavelength having a peak
wavelength in a cyan light wavelength band and red phosphors emitting the light with the converted wavelength having a peak
wavelength in a red light wavelength band, and

wherein the light emitting device is configured to emit an output light such that approximately equal to or less than 3% of
the output light have a wavelength in the range of 435 nm to 465 nm.

US Pat. No. 10,060,579

LIGHT EMITTING MODULE AND LENS

Seoul Semiconductor Co., ...

14. A lens, comprising:a first surface comprising a substantially flat portion and a concave portion enclosed by the substantially flat portion;
a second surface comprising a concave surface disposed on a central axis of the second surface such that light incident on the concave portion and directed to the concave surface of the second surface is emitted from the concave surface, the central axis being perpendicular to the substantially flat portion of the first surface; and
legs, wherein:
the concave portion of the first surface comprises at least one of a surface perpendicular to the central axis or a convex surface disposed on the central axis;
the at least one of the surface perpendicular to the central axis or the convex surface is disposed in a region narrower than an entrance region of the concave portion;
the legs are configured to separate an entire light emitting device from the lens in a direction parallel to the central axis such that the light emitting device is disposed entirely below the substantially flat portion of the first surface of the lens and entirely outside the concave portion of the lens, and
the lens is configured to disperse luminous flux of light emitted from the light emitting diode chip such that a viewing angle of light emitted from the lens is larger than a viewing angle of light emitted from the light emitting diode chip wherein an entrance region of the concave portion comprises a shape elongated in a single axis direction perpendicular to the central axis, and wherein the second surface has a shape elongated in a direction perpendicular to the single axis direction.

US Pat. No. 9,834,863

GROUP III NITRIDE BULK CRYSTALS AND FABRICATION METHOD

SixPoint Materials, Inc.,...

1. A bulk crystal of group III nitride having a composition of GaxAlyIn1-x-yN (0?x?1, 0?x+y?1) and a thickness greater than 1 millimeter wherein the bulk crystal has at least three portions,
(a) a first portion comprising a seed crystal containing a donor dopant other than oxygen and having a first major face and
a second major face, the first major face having an electron concentration, N1seed, and the second major face having an electron concentration N2seed;

(b) a second portion on the first major face of the seed crystal and comprising a first crystalline region, wherein the first
crystalline region has an electron concentration, N1st-xtal,

(c) a third portion on the second major face of the seed crystal and comprising a second crystalline region, wherein said
second crystalline region has an electron concentration N2nd-xtal, and

(d) wherein the electron concentration of the seed crystal, the first crystalline region, and the second crystalline region
satisfy the following relationship:

0.1

US Pat. No. 9,818,908

METHOD AND APPARATUS FOR MOLDING ENCAPSULANT OF LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. An apparatus for molding an encapsulant of light emitting devices, comprising:
an upper mold configured to support a substrate comprising optical semiconductors mounted thereon;
a lower mold disposed to face the upper mold and configured to at least partially form a resin confining space; and
an ejector pin having hollow cross-sectional shapes defining a plurality of enclosed spaces configured to divide the resin
confining space into sections such that the encapsulant molded on the substrate and disposed in the resin confining space
is separated into pieces by the ejector pin,

wherein the lower mold comprises an upper surface comprising molding cavities having a semi-spherical shape and each semi-spherical
shaped molding cavity is entirely surrounded by the ejector pin and disposed within one of the plurality of enclosed spaces
of the ejector pin.

US Pat. No. 9,741,907

LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF

Seoul Semiconductor Co., ...

1. A light-emitting diode package, comprising:
a light-emitting diode chip disposed in a housing;
a first phosphor configured to emit green light; and
a second phosphor configured to emit red light,
wherein:
a white light is configured to be formed by a synthesis of light emitted from the light emitting diode chip, the first phosphor,
and the second phosphor;

the second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta;

Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M; and

the white light has national television system committee (NTSC) color saturation which is more than or equal to about 85%.

US Pat. No. 9,769,897

BACKLIGHT UNIT USING MULTI-CELL LIGHT EMITTING DIODE

Seoul Semiconductor Co., ...

1. A backlight unit comprising:
a backlight module comprising:
a printed circuit board including blocks and multi junction technology light emitting diodes (MJT LEDs) disposed on the blocks,
respectively; and

a backlight control module generating a signal for drive control of each of the blocks,
wherein:
each block comprises at least one MJT LED,
the backlight control module comprises a drive controller for On/Off control and dimming control of each block, and
each MJT LED comprises:
a first light emitting cell and a second light emitting cell disposed on a single growth substrate separated from each other,
each of the first and second light emitting cells comprising: a lower semiconductor layer, an upper semiconductor layer disposed
on the lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers;

a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light
emitting cell;

an interconnection line electrically connecting the first light emitting cell to the second light emitting cell; and
an insulation layer insulating the interconnection line from a side surface of the first light emitting cell.

US Pat. No. 9,631,790

ILLUMINATION LENS FOR SHORT-THROW LIGHTING

Seoul Semiconductor Co., ...

1. An illumination lens, comprising:
a light incident surface that defines a cavity and comprises a top surface and lateral flanks, the light incident surface
configured to receive light from an underlying light emitting element;

a light exiting surface comprising a central indentation and surrounding toroid; and
a bottom surface connecting the light incident surface and the light exiting surface,
wherein:
the lateral flank comprises a first region extending from the top surface and a second region extended from the first region;
the second region is a curved surface, of which the center of the curvature thereof lies on the illumination lens,
an intersection of the second region and a horizontal optical axis forms a first point; and
the first point is disposed lower than a second point where the bottom surface and the light exiting surface intersect.

US Pat. No. 9,842,961

LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A method of fabricating a light-emitting device, the method comprising:
forming a first resin comprising a phosphor on a light-emitting diode chip mounted on a package body;
measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor;
correcting the color coordinates by forming a second resin on the first resin; and
curing the first resin and the second resin after correcting the color coordinates,
wherein the first resin is not fully cured before measuring and correcting the color coordinates.

US Pat. No. 9,837,387

LIGHT EMITTING APPARATUS

Seoul Semiconductor Co., ...

1. A light emitting apparatus, comprising:
a light-transmissive substrate comprising a top surface and a bottom surface;
a semiconductor light emitting device disposed on the top surface of the light-transmissive substrate, wherein the semiconductor
light emitting device is configured to emit light through the light-transmissive substrate;

a reflective part disposed over the semiconductor light emitting device and configured to reflect light from the semiconductor
light emitting device toward the light-transmissive substrate;

a first wavelength converter disposed between the light-transmissive substrate and the reflective part, such that a first
portion of light emitted from the semiconductor light emitting device and directed to the reflective part is converted by
the first wavelength converter and a second portion of light emitted from the semiconductor light emitting device and directed
to the reflective part passes through the first wavelength converter without wavelength conversion;

a second wavelength converter disposed directly on the bottom surface of the light-transmissive substrate at a position corresponding
to the semiconductor light emitting device, such that a third portion of light emitted from the semiconductor light emitting
device and directed to the light-transmissive substrate is converted by the second wavelength converter; and

a light-transmissive adhesive material disposed between the semiconductor light emitting device and the light-transmissive
substrate,

wherein the reflective part is configured to reflect the first portion of light converted by the first wavelength converter
and the second portion of light passing through the first wavelength converter toward the light-transmissive substrate.

US Pat. No. 9,713,213

LED LUMINESCENCE APPARATUS

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) luminescence apparatus, comprising:
a rectifying unit configured to rectify an alternating current (AC) voltage and generate a rectified voltage;
LEDs connected in series to a first terminal of the rectifying unit;
switches comprising first terminals respectively connected to first electrodes of the LEDs;
resistors respectively connected to second terminals of the switches, the resistors being connected in series with one another;
and

a switch control unit configured to sense respective currents through the resistors, compare each respectively sensed current
with a reference current, and output respective voltages corresponding to respective differences between the respectively
sensed currents and the reference current to respective third terminals of the switches,

wherein:
the switch control unit comprises:
a reference voltage generation unit comprising first operators configured to generate a reference voltage corresponding to
the reference current; and

switch control generation units configured to change the sensed currents to corresponding sensed voltages, compare each sensed
voltage with the reference voltage, and output respective voltage differences between the sensed voltages and the reference
voltage to the respective third terminals of the switches;

each of the switch control signal generation units comprises:
a second operator comprising a negative feedback loop;
an input impedance unit connected to a (?) terminal of the second operator to change a sensed current to a sensed voltage;
and

a feedback impedance unit connected between an output terminal and the (?) terminal of the second operator; and
the second operator is configured to compare the sensed voltage input to the (?) terminal with the reference voltage input
to a (+) terminal, and output an input voltage corresponding to a difference between the sensed voltage and the reference
voltage to the third terminal of the corresponding switch.

US Pat. No. 9,705,287

METHOD OF FABRICATING A P TYPE NITRIDE SEMICONDUCTOR LAYER DOPED WITH CARBON

Seoul Semiconductor Co., ...

1. A method of growing, using metal organic vapor phase epitaxy (MOVPE), a uniform p type III-V group nitride semiconductor
layer on a substrate directly or with a single or a plurality of intermediate layers being provided therebetween, the method
comprising the steps of:
(a) growing a layer consisting of 5 to 7 molecular layers of III-group atoms by supplying a III-source gas during a first
time period;

(b) growing a carbon-doped layer consisting of 5 to 7 molecular layers of V-group atoms by supplying a V-source gas during
a second time period separate from the first time period and supplying a carbon source gas as a p type dopant during a time
period that overlaps and is shorter than the second time period,

alternately repeating the step of (a) and the step of (b),
wherein:
the substrate is either a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride substrate
or an aluminum nitride substrate; and

the substrate has a main surface having an offset angle in a range of +/?0.1% with respect to a C-plane or a crystal plane
equivalent to the C-plane.

US Pat. No. 9,702,054

SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER

Seoul Semiconductor Co., ...

1. A solution deposition method comprising:
applying a liquid precursor solution to a substrate, the precursor solution comprising an oxide of a first metal, a hydroxide
of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution;

evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer comprising an oxide
of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic
compounds; and

growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site,
wherein the bulk layer has an epitaxial relationship with the seed layer.

US Pat. No. 9,690,041

AIR CAVITY LED BACKLIGHT UNIT

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) backlight unit, comprising:
first and second curved bottom floor reflectors exhibiting mirror image symmetry along a center line extending in a latitudinal
direction;

first and second sides disposed along a longitudinal direction, the first and second bottom floor reflectors disposed therebetween;
first and second back reflectors disposed on distal ends of the first and second bottom floor reflectors, respectively, away
from the center line;

LEDs disposed in or adjacent to the first and second back reflectors; and
lenses disposed over the LEDs,
wherein a curvature of the first and second bottom floor reflectors respectively reach a maximum near the center line,
wherein upper surfaces of the LEDs face a top surface of the LED backlight unit, and
wherein the lenses each have a center point, a horizontal bisector crossing the center point between a first lateral end and
a second lateral end opposite the first lateral end in plan view, and an upper surface and a bottom surface in cross-sectional
view,

wherein the lenses each comprise two lobes separated by a V-shaped groove extending from the first lateral end to the second
lateral end and extending from the upper surface to the bottom surface,

wherein the V-shaped groove has a small opening at the first lateral end compared to a large opening at the second lateral
end, and

wherein the LEDs are offset from the horizontal bisector at a position closer to the small opening than the large opening.

US Pat. No. 9,618,181

LENS AND LIGHT EMITTING MODULE FOR SURFACE ILLUMINATION

Seoul Semiconductor Co., ...

1. A light emitting module, comprising:
a circuit board;
a light emitting device mounted on the circuit board; and
a lens configured to disperse light emitted from the light emitting device, the light emitting device being disposed on the
circuit board along a central axis of the lens,

the lens comprising:
a lower surface comprising a concave section defining a light incident surface through which light enters the lens;
an upper surface through which light exits the lens;
a flange disposed on a side surface of the lens;
first and second protruding portions connected to the flange on opposite sides of the lens from each other; and
additional first protruding portions connected to the first protruding portion and additional second protruding portions connected
to the second protruding portion,

wherein:
the light emitting device is disposed within the concave section of the lens;
the first and second protruding portions have an equal length between them along either side of the lens; and
the lower surface of the lens comprises a flat surface surrounding the concave section and a slanted surface surrounding the
flat surface.

US Pat. No. 10,186,642

LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR

Seoul Semiconductor Co., ...

9. A light emitting device, comprising:heat sinks separated from each other;
a housing surrounding and disposed between the heat sinks to separate them;
light emitting diodes respectively disposed on each of the heat sinks, the light emitting diodes configured to emit primary light and having different peak emission wavelengths;
a wavelength converter disposed on the light emitting diodes and configured to convert the primary light into a secondary light having peak emission wavelengths in a first color range between 450 nm and 520 nm, a second color range 500 nm and 570 nm, and a third color range 570 nm and 680 nm; and
lead frames protruded from the housing and configured to supply external power to the light emitting diodes,
wherein:
the wavelength converter comprises a first phosphor having a first peak emission wavelength in the first color range, a second phosphor having a second peak emission wavelength in the second color range, and a third phosphor having a third peak emission wavelength in the third color range;
one of the first phosphor, the second phosphor, and the third phosphor comprises a plurality of phosphor components, each phosphor component comprising a different peak emission wavelength in the first color range, the second color range, or the third color range.

US Pat. No. 9,899,573

SLIM LED PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a first lead frame and a second lead frame separated from each other;
an LED chip disposed on the first lead frame and electrically connected with the second lead frame; and
a resin covering at least portions of surfaces of the first and second lead frames,
wherein:
each of the first and second lead frames comprises:
a first side facing the other lead frame and a second side opposite the first side;
a first groove disposed on a lower surface thereof and adjacent the first side;
a second groove disposed on the lower surface thereof and adjacent the second side; and
a depth of the first groove is equal to a depth of the second groove.

US Pat. No. 9,857,526

BACKLIGHT UNIT

Seoul Semiconductor Co., ...

1. A backlight unit comprising:
a light guide plate;
a light emitting device disposed adjacent to a first side of the light guide plate;
a first reflector disposed under the light guide plate and having one side adjacent to an area in which the light emitting
device is disposed;

a second reflector disposed above the light emitting device;
a housing receiving the light guide plate, the light emitting device, the first reflector, and the second reflector; and
a thin film transistor substrate directly contacting top surfaces of the second reflector and the light guide plate,
wherein the second reflector comprises a curved or inclined structure, a first distal end of the second reflector contacting
a circuit board and a second distal end contacting the light guide plate,

wherein the housing has a side portion on which the light emitting device is received, the side portion having a cross-section
comprising a first side defined as a lower surface of the housing, and a second side vertically extending from the first side
in an upper direction of the housing, and

wherein the first distal end of the second reflector contacts the second side of the housing and an upper surface of the circuit
board, and the second distal end of the second reflector contacts a side surface of the light guide plate.

US Pat. No. 9,851,059

LENS AND LIGHT EMITTING MODULE FOR SURFACE ILLUMINATION

Seoul Semiconductor Co., ...

1. A light-emitting module, comprising:
a circuit board;
a light-emitting device disposed on the circuit board; and
a lens disposed on the circuit board, the lens configured to distribute light emitted from the light-emitting device,
wherein the lens comprises:
a first surface comprising a concave portion having an incidence surface configured to receive light emitted from the light-emitting
device, and

a second surface through which the light incident on the incidence surface of the concave portion exits,
wherein the second surface comprises a flat portion disposed intersect a central axis, and a convex surface surrounding the
flat or concave portion,

wherein the light-emitting device is disposed within the concave portion of the first surface of the lens,
wherein the incidence surface of the lens is an inner surface of the concave portion of the first surface of the lens,
wherein the incidence surface of the lens comprises an upper end surface and a side surface extending from the upper end surface
and continuing to a planar surface,

wherein the first surface of the lens further comprises the planar surface, the planar surface surrounding the concave portion
of the first surface of the lens and being entirely within a circumference of the flat portion of the second surface of the
lens, and

wherein the flat portion and the convex surface of the second surface comprise a continuous curve.

US Pat. No. 9,847,371

LIGHT EMITTING DIODE CHIP FOR HIGH VOLTAGE OPERATION AND LIGHT EMITTING DIODE PACKAGE INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) chip for high voltage operation from an alternating current (AC) power source, comprising:
a substrate;
a first array of light emitting cells arranged on the substrate, the first array comprising n light emitting cells connected
in series; and

a second array of light emitting cells arranged on the substrate, the second array comprising m light emitting cells connected
in series,

wherein the first array and the second array are connected in reverse parallel to each other,
wherein a magnitude of a driving voltage of the first array is defined as Vd1, a magnitude of a driving voltage of the second
array is defined as Vd2, and a difference between Vd1 and Vd2×(n/m) is more than 0 and less than or equal to ?×(Vd1+Vd2)/(n+m),
and

wherein n and m are natural numbers, and
wherein the magnitude of the driving voltage of each array is at least about 50V and refers to a magnitude of voltage applied
to opposite ends of the corresponding array when a predetermined amount of driving current flows in the corresponding array.

US Pat. No. 9,810,382

LIGHT EMITTING MODULE HAVING LENS

Seoul Semiconductor Co., ...

1. A light-emitting module, comprising:
a substrate comprising a first recess and a second recess encompassing the first recess which is recessed within the second
recess;

a light-emitting element disposed in the first recess; and
a lens disposed on the substrate in the second recess and covering the light-emitting element, the lens configured to diffuse
light emitted from the light-emitting element.

US Pat. No. 9,735,877

OPTICAL COMMUNICATION DEVICE USING AC LED LIGHTING AND COMMUNICATION METHOD USING THE SAME

Seoul Semiconductor Co., ...

9. An optical communication method using alternating current (AC) light emitting diode (LED) lighting, the optical communication
method comprising:
receiving an AC input voltage to generate a rectified voltage;
determining a voltage level of the rectified voltage;
sequentially driving a plurality of LED groups by sequentially turning on and turning off the plurality of LED groups based
on the determined voltage level of the rectified voltage;

comparing the determined voltage level of the rectified voltage with a preset threshold voltage level;
permitting optical communication through the plurality of LED groups only when the voltage level of the rectified voltage
is greater than or equal to the preset threshold voltage level; and

terminating the optical communication when the voltage level of the rectified voltage is decreased below the threshold voltage
level; and

initiating the optical communication by controlling the plurality of LED groups to turn on only when the voltage level of
the rectified voltage is increased to a voltage level greater than or equal to the threshold voltage level.

US Pat. No. 9,705,050

PHOSPHOR SHEET, LIGHT-EMITTING DEVICE HAVING THE PHOSPHOR SHEET AND METHOD OF MANUFACTURING THE SAME

Seoul Semiconductor Co., ...

10. A light-emitting device, comprising:
a substrate;
light-emitting diode (LED) chips disposed on the substrate and separated from each other;
a phosphor sheet disposed on an upper surface of the LED chips;
first transparent parts disposed under the phosphor sheet; and
second transparent parts disposed between the phosphor sheet and the LED chips,
wherein the first transparent parts are separated from each other, and the second transparent parts are separated from each
other,

wherein one of the second transparent parts disposed on one of the LED chips contacts one of the first transparent parts,
and

wherein the first transparent parts have thicknesses greater than thicknesses of the second transparent parts.

US Pat. No. 9,698,317

LIGHT EMITTING DEVICE HAVING UV LIGHT EMITTING DIODE FOR GENERATING HUMAN-FRIENDLY LIGHT AND LIGHTING APPARATUS INCLUDING THE SAME

SEOUL SEMICONDUCTOR CO., ...

1. A light emitting device comprising:
an ultraviolet light emitting diode to emit light in an ultraviolet wavelength region;
blue phosphors, green phosphors, and red phosphors excitable by the ultraviolet light emitted by the ultraviolet light emitting
diode to emit corresponding light that is combined with the ultraviolet light to form white light; and

a converting part covering the ultraviolet light emitting diode comprising:
a first molding part comprising the red phosphors covering the ultraviolet light emitting diode;
a second molding part comprising the green phosphors covering the first molding part; and
a third molding part comprising the blue phosphors covering the second molding part,
wherein the white light includes ultraviolet light, green light, blue light, and red light,
an intensity of a peak wavelength of the green light is in a range of 1.8 to 2.1 times the intensity of a peak wavelength
of the blue light,

an intensity of a peak wavelength of the red light is in a range of 2.8 to 3.1 times the intensity of the peak wavelength
of the blue light, and

the converting part has a hardness increasing from the first molding part to the third molding part.

US Pat. No. 9,698,319

LED PACKAGE WITH LEAD TERMINALS HAVING PROTRUSIONS OF DIFFERING WIDTHS AND METHOD FOR FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:
a base comprising a first lead terminal and a second lead terminal, both of the first lead terminal and the second lead terminal
comprising a first part, a second part, and a third part, each of the first part, the second part, and the third part having
a different width, the width of the second part being narrower than the width of the first part, the third part being between
the first part and the second part, and the width of the third part being narrower than the width of the second part;

an LED chip disposed on the base;
a housing comprising a first portion disposed between the first lead terminal and the second lead terminal, and a second portion
disposed on the first portion and the base, the housing comprising a cavity in which the LED chip is disposed; and

an encapsulation member comprising a side surface contacting the housing,
wherein the first portion comprises:
an interfacial portion disposed in a gap between the first lead terminal and the second lead terminal; and
side portions connected to the interfacial portion and partially covering side surfaces of the first and second lead terminals,
wherein a length of a side surface of the second portion of the housing is greater than a length of the side portions of the
first portion of the housing,

wherein the first lead terminal and the second lead terminal each comprise an upper surface and a bottom surface opposite
the upper surface, and have an unbent form, respectively,

wherein the bottom surface is exposed to the outside of the LED package,
wherein the first lead terminal and the second lead terminal comprise a first protrusion and a second protrusion, respectively,
exposed outside of the housing,

wherein the width of the first part is the same as a width of the first protrusion and a width of the second protrusion,
wherein the bottom surfaces of the first and second lead terminals are flush with a bottom surface of the first portion of
the housing,

wherein the side portions of the first portion of the housing are flush with portions of side surfaces of the first and second
lead terminals,

wherein portions of the upper surfaces of the first and second lead terminals are exposed outside of the housing, respectively,
and

wherein each of the portions of the upper surfaces of the first and second lead terminals exposed outside of the housing has
a constant width the same as that of the housing in a direction crossing the side portions of the first portion of the housing.

US Pat. No. 9,644,832

LIGHTING DEVICE

Seoul Semiconductor Co., ...

1. A lighting apparatus provided in a warehouse and driven by an industrial power source, the lighting apparatus comprising:
a main body comprising a plurality of concave portions and a plurality of convex portions;
a plurality of light emitting modules disposed on the concave portions of the main body; and
guide members respectively disposed between each of the plurality of light emitting modules,
wherein each of the guide members comprises:
a flat portion; and
inclined portions extending from opposite sides of the flat portion,
wherein the flat portion is disposed on and overlaps one of the plurality of convex portions of the main body.

US Pat. No. 9,570,424

LIGHT SOURCE MODULE AND MANUFACTURING METHOD THEREOF, AND BACKLIGHT UNIT

Seoul Semiconductor Co., ...

1. A light source module, comprising:
a circuit board;
light emitting diode chips mounted on the circuit board by flip-chip bonding or a surface mounting technology (SMT);
a diffusor sheet covering the circuit board and the light emitting diode chips;
a wavelength converting layer covering a top and sides of the light emitting diode chips, wherein a thickness of the wavelength
converting layer on the top and the sides of the light emitting diode chips are the same; and

a reflector disposed between the light emitting diode chips,
wherein the diffusor is disposed directly on an upper surface of the reflector and an upper surface of the wavelength converting
layer,

a side surface of each wavelength converting layer is connected to a corresponding reflector; and
an upper surface of the diffusor sheet is flat.

US Pat. No. 10,054,731

LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME

Seoul Semiconductor Co., ...

1. A light source module comprising:a circuit board;
a first light emitting device mounted on the circuit board by flip-chip bonding or surface mount technology (SMT);
a reflective portion disposed on the circuit board and comprising at least one recess accommodating the first light emitting device and an open end forming a light discharge portion; and
a reflective layer disposed on a top of the first light emitting device and a side of the first light emitting device opposite the light discharge portion, the reflective layer configured to guide emitted light to exit through other side surfaces of the first light emitting device,
wherein the reflective portion has a height greater than a height of the first light emitting device.

US Pat. No. 9,978,727

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF

Seoul Semiconductor Co., ...

1. A display apparatus comprising:a light emitting diode part comprising a plurality of regularly arranged light emitting diodes; and
a thin-film transistor (TFT) panel part comprising a plurality of TFTs configured to drive the light emitting diodes disposed on the TFT panel part,
wherein the light emitting diode part further comprises:
a transparent substrate disposed on the light emitting diodes; and
a phosphor layer disposed on the transparent substrate and configured to emit at least one of blue light, green light, and red light by converting at least a portion of a wavelength of light emitted from the light emitting diodes, and
wherein a thickness of the transparent substrate is less than a thickness of the phosphor layer.

US Pat. No. 9,910,203

LIGHT SOURCE MODULE AND BACKLIGHT UNIT HAVING THE SAME

Seoul Semiconductor Co., ...

1. A light source module comprising:
a module board;
a light emitting device comprising a light emitting diode chip comprising an upper surface and four side surfaces, a wavelength
conversion layer covering the upper surface and the four side surfaces of the light emitting diode chip, and a reflective
layer, the light emitting device mounted on a first portion of the module board by flip-chip bonding; and

a reflective portion disposed on a second portion of the module board, spaced apart from the light emitting device on the
module board, and enclosing the light emitting device,

wherein the reflective portion comprises an accommodation recess and inner surfaces at least partially defined by the accommodation
recess, the accommodation recess being open at one side thereof to have a light discharge portion in plan view, and

wherein the reflective layer covers the wavelength conversion layer disposed on the upper surface of the light emitting diode
chip.

US Pat. No. 9,786,827

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light-emitting diode package, comprising:
a package body comprising:
an upper insulation substrate comprising upper conductive patterns;
a lower insulation substrate comprising lower conductive patterns;
middle conductive patterns interposed between the upper insulation substrate and the lower insulation substrate;
an upper via disposed in the upper insulation substrate; and
a lower via disposed in the lower insulation substrate,
wherein the upper via and the lower via are not overlaid with each other.

US Pat. No. 9,664,356

ILLUMINATION LENS FOR SHORT-THROW LIGHTING

Seoul Semiconductor Co., ...

1. An illumination lens, comprising:
a light incident surface that defines a cavity having rotational symmetry with respect to a central axis, the light incident
surface configured to receive light from an underlying light emitting element;

a light exiting surface comprising a flat surface intersecting the central axis and a convex surface extended from the flat
surface toward a side portion; and

a bottom surface connecting the light incident surface and the light exiting surface, wherein:
an uppermost part of the light exiting surface has an infinite intersecting point with a horizontal axis vertical to the central
axis in a cross-sectional view;

a lowermost part of the bottom surface has two intersecting points with the horizontal axis in the cross-sectional view; and
the bottom surface comprises an inclined surface having an angle formed by the bottom surface with respect to the horizontal
axis.

US Pat. No. 10,050,026

DISPLAY APPARATUS

Seoul Semiconductor Co., ...

1. A display apparatus, comprising:a light emitting diode part comprising:
a transparent support substrate;
a plurality of light emitting diodes regularly arranged on the support substrate; and
a plurality of phosphor layers disposed on the support substrate covering at a first portion of the plurality of light emitting diodes and configured to emit light through a conversion of introduced light;
a blocking portion disposed on the support substrate and interposed between the plurality of phosphor layers;
a plurality of transparent electrodes covering the plurality of phosphor layers and comprising portions disposed on each side surface of the blocking portion laterally adjacent to the plurality of light emitting diodes, the plurality of transparent electrodes electrically connected to the plurality of light emitting diodes; and
a TFT panel configured to drive the light emitting diode part.

US Pat. No. 9,882,102

WAFER-LEVEL LIGHT EMITTING DIODE AND WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) package, comprising:
a first semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed
between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact
region exposing the first semiconductor layer;

a first pad arranged on a first side of the first semiconductor stack and being electrically connected to the first semiconductor
layer via the contact region of the first semiconductor layer;

a second pad arranged on the first side of the first semiconductor stack and being electrically connected to the second semiconductor
layer;

a conductive element arranged on the first side of the semiconductor stack and disposed between the first pad and the second
pad; and

a first insulation layer covering the conductive element.

US Pat. No. 9,880,417

ILLUMINATION LENS FOR LED BACKLIGHTS

Seoul Semiconductor Co., ...

1. A light-emitting apparatus having a 16:9 geometry, comprising:
light-emitting elements disposed on a first substrate or a second substrate;
light flux control members respectively disposed on the light-emitting elements and on the first or second substrate; and
a film stack disposed above the light flux control members,
wherein each light flux control member comprises:
a bottom surface section disposed on the first or second substrate;
a non-rotationally symmetric input surface section comprising an inward recess disposed in the bottom surface section at a
position directly above one of the light-emitting elements; and

a non-rotationally symmetric output surface configured to refract light passing through the input surface section, and to
transmit light outside,

wherein the light flux control members disposed on the first substrate are spaced 100 mm apart from each other in a first
direction, and

wherein the light-emitting elements are spaced 23 mm away from the film stack.

US Pat. No. 9,835,306

LED ILLUMINATION APPARATUS

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a substrate;
a light source disposed on the substrate;
a cover unit covering the substrate and comprising a first cover unit and a second cover unit; and
a reflector disposed inside of the cover unit and configured to reflect a portion of light emitted from the light source toward
an area beside at least one of a side surface of the substrate and an area in front of a bottom surface of the substrate,

wherein the first cover unit and the second cover unit comprise a wavelength converting material, respectively.

US Pat. No. 9,793,448

LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. light-emitting diode (LED), comprising:
a substrate;
a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type
semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

a wavelength converting layer configured to convert a wavelength of light emitted from the semiconductor stacked structure,
the wavelength converting layer covering side surfaces of the substrate and the semiconductor stacked structure; and

a distributed Bragg reflector (DBR) configured to reflect at least a portion of light wavelength-converted by the wavelength
converting layer,

wherein at least a portion of the DBR is covered with a metal layer configured to reflect light transmitted through the DBR,
and

wherein the DBR comprises alternately stacked insulating layers with different refractive indices.

US Pat. No. 9,714,751

ILLUMINATION LENS FOR SHORT-THROW LIGHTING

Seoul Semiconductor Co., ...

1. An illumination lens, comprising:
a light incident surface that defines a cavity and comprises a flat top and lateral flanks, the light incident surface configured
to receive light from an underlying light emitting element; and

a light exiting surface comprising a central indentation and a surrounding toroid,
wherein the flat top is planar, is perpendicular to a vertical optical axis, has an angular range of 0 to 25° with respect
to the vertical optical axis as measured from an intersection of the vertical optical axis and the underlying light emitting
element, and faces the central indentation.

US Pat. No. 10,068,884

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF

Seoul Semiconductor Co., ...

1. A method of manufacturing a display apparatus, the method comprising:forming a first substrate having a plurality of light emitting diodes regularly arranged thereon;
forming a second substrate comprising a thin-film transistor (TFT) panel part comprising a plurality of TFTs configured to drive the light emitting diodes;
forming a third substrate comprising a light converter, comprising:
forming a filter unit on a protective substrate, the filter unit comprising a plurality of filters having a first width to block light of a predetermined wavelength among light passing therethrough; and
forming a plurality of phosphor layers on the filter unit, the phosphor layers having a second width less than the first width to convert the wavelength of light passing therethrough; and
coupling the first, second, and third substrates to one another,
wherein light emitted from the light emitting diodes is converted into one of blue light, green light, and red light through the light converter.

US Pat. No. 9,887,184

DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF

Seoul Semiconductor Co., ...

1. A display apparatus, comprising:
a first substrate comprising a plurality of light emitting diodes regularly arranged on the first substrate; and
a second substrate comprising a TFT panel unit comprising a plurality of TFTs driving the light emitting diodes,
wherein the first substrate and the second substrate are coupled to each other so as to face each other such that the light
emitting diodes are electrically connected to the TFTs, respectively,

wherein the first substrate comprises:
a support substrate;
a plurality of blue light emitting diodes arranged on an upper surface of the support substrate;
a plurality of green light emitting diodes arranged on the upper surface of the support substrate to be placed adjacent the
blue light emitting diodes; and

a plurality of red light emitting diodes arranged on the upper surface of the support substrate to be placed adjacent either
the blue light emitting diodes or the green

light emitting diodes,
and further comprising:
a first bonding portion bonding the blue light emitting diodes to the support substrate;
a second bonding portion bonding the green light emitting diodes to the support substrate; and
a third bonding portion bonding the red light emitting diodes to the support substrate,
the first to third bonding portions having different melting points.

US Pat. No. 9,978,919

LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. A light emitting device, comprising:a first lead;
a second lead spaced apart from the first lead;
a body comprising:
a base at least partially surrounding side surfaces of the first and second leads, the base filling a separation region between the first and second leads,
a reflector disposed on the base, and
a cavity surrounded by the reflector, the cavity being open at an upper side thereof; and
a light emitting diode disposed in the cavity, the reflector being configured to reflect light emitted from the light emitting diode,
wherein the first lead comprises:
a first bottom lead, and
a first top lead disposed on the first bottom lead,
wherein the second lead comprises:
a second bottom lead, and
a second top lead disposed on the second bottom lead,
wherein a first portion of the separation region positioned between the first top lead and the second top lead has a different shape than a second portion of the separation region positioned between the first bottom lead and the second bottom lead, and
wherein a shape of the first portion comprises at least one bend, and
wherein an imaginary line extending orthogonal to a longitudinal direction of extension of the first portion bisects the first portion into halves of equal dimension in the longitudinal direction, the halves being asymmetrically configured about the imaginary line.

US Pat. No. 9,960,324

LIGHT-EMITTING DEVICE HAVING SURFACE-MODIFIED LUMINOPHORES

Seoul Semiconductor Co., ...

1. A light emitting device, comprising;a substrate;
a first light-emitting diode disposed on the substrate;
a molding member encapsulating the first light-emitting diode; and
luminophores dispersed in the molding member and comprising a surface-modified luminophore,
wherein the surface-modified luminophore comprises:
a fluorinated coating; and
a fluoride luminophore comprising a manganese activator, the fluoride luminophore being selected from the group consisting of K2SiF6, Na2SiF6, Rb2SiF6, K2GeF6, Na2GeF6, and Rb2GeF6.

US Pat. No. 9,885,457

LED ILLUMINATION LAMP BULB WITH INTERNAL REFLECTOR

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:
a substrate;
a first light source and a second light source disposed on a first surface of the substrate;
a cover unit comprising a phosphor and covering the substrate;
a heat sink comprising:
a planar mounting area supporting a second surface of the substrate opposite to the first surface; and
a guide surface extending from the perimeter of the mounting area at an oblique angle;
a reflector disposed between the first light source and the second light source,
wherein the reflector is configured to reflect light emitted by the first light source below the plane of the mounting area
and along the guide surface.

US Pat. No. 9,859,259

LIGHT EMITTING APPARATUS

Seoul Semiconductor Co., ...

1. A light emitting apparatus, comprising:
a substrate having a support surface having a first side opposing a second side;
a three-color light emitting device disposed on the first side of the support surface and comprising red, green, and blue
light emitting diode (LED) chips;

a white light emitting device disposed on the second side of the support surface and comprising second blue LED chips;
a first electrode disposed on the first side and the second side of support surface and electrically connected to each of
the LED chips;

second electrodes disposed on the first side of the support surface surrounding the first electrode, each second electrode
disposed on and electrically connected to a respective one of the LED chips of the three-color light emitting device;

third electrodes disposed on the second side of the support surface and surrounding the first electrode, each third electrode
disposed on and electrically connected to a respective one of the second blue LED chips;

a molding member encapsulating the light emitting devices; and
a fluorescent substance selectively dispersed in the molding member, and localized around the second blue LED chips of the
white light emitting device, wherein

the molding member completely covers at least two LED chips.

US Pat. No. 10,134,967

LIGHT EMITTING DEVICE

Seoul Semiconductor Co., ...

1. A light-emitting device, comprising:a first lead frame and a second lead frame spaced apart from each other, the first and second lead frames each comprising a top surface, an opposing bottom surface, and sidewalls arranged between the top surface and the bottom surface; and
a light-emitting diode chip disposed on the top surface of the first or second lead frame, wherein:
each of the first lead frame and the second lead frame comprises a first undercut sidewall, a second undercut sidewall, and a third undercut sidewall that at least partially define a fixing space, the fixing space being formed by the undercut sidewalls of the first lead frame and the second lead frame,
the top surfaces of the first and second lead frames are substantially flat, and
the first lead frame and the second lead frame face each other in a horizontal direction such that the first undercut sidewall of the first lead frame faces the first undercut sidewall of the second lead frame,
the second undercut sidewall and the third undercut sidewall of the first lead frame are parallel to each other and perpendicular to the first undercut sidewall of the first lead frame, and
the second undercut sidewall and the third undercut sidewall of the second lead frame are parallel to each other and perpendicular to the first undercut sidewall of the second lead frame.

US Pat. No. 10,028,344

BACKLIGHT DRIVING APPARATUS

Seoul Semiconductor Co., ...

1. A lighting apparatus, comprising:a light-emitting diode (LED) array comprising LEDs;
a rectifying unit configured to rectify an alternating current (AC) voltage and to generate a driving voltage for the LED array;
a switch control signal generation unit configured to generate switching control signals depending on the driving voltage, the switching control signals comprising connection control signals, current control signals and a compensation control signal;
connection changing units configured to change a connection between the LEDs according to the connection control signals;
constant current control units configured to control the current flowing through the corresponding LEDs according to the current control signals; and
a light output compensation unit comprising a capacitor and a current limit unit configured to limit current applied to the capacitor, the light output compensation unit being configured to generate a compensation voltage according to the compensation control signal, and selectively supply the compensation voltage to the LED array.

US Pat. No. 9,995,453

LAMP BULB WITH INTERNAL REFLECTOR

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:a substrate comprising a first surface and an opposing second surface;
first and second light sources disposed on the first surface of the substrate;
a cover unit covering the substrate; and
a reflector disposed inside of the cover unit and configured to reflect a first portion of light emitted from the first light source toward an area beside a side surface of the substrate and an area in front of the second surface of the substrate,
wherein second portion of light emitted from the first light source is configured to directly travel toward the cover unit without being reflected by the reflector; and
wherein the reflector defines a central opening configured to permit additional portions of light emitted from the first light source and second light source to travel through unobstructed.

US Pat. No. 9,951,924

LED ILLUMINATION APPARATUS WITH INTERNAL REFLECTOR

Seoul Semiconductor Co., ...

1. An illumination apparatus, comprising:a heat sink;
a substrate comprising a first surface and an opposing second surface;
a light source disposed on the first surface of the substrate;
a cover unit covering the substrate, the cover unit connected to the heat sink; and
a reflector disposed inside of the cover unit,
wherein a space over the first surface of the substrate is defined as a first space, and another space over an outer region of edges of the substrate is defined as a second space,
wherein the heat sink comprises a surface which is not covered by the substrate,
wherein the reflector extends toward the second space from the first space, and an end portion of the reflector extends outside of the outer regions of edges of the substrate from a plan view and a cross sectional view,
wherein the reflector contacts the substrate, and
wherein the cover unit comprises a first cover unit and a second cover unit, the second cover unit covering the first cover unit.

US Pat. No. 9,929,330

LIGHT EMITTING DIODE PACKAGE

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) package, comprising:a first lead frame and a second lead frame spaced apart from each other, the first lead frame and the second lead frame respectively comprising a first side and second side facing each other;
at least one LED chip disposed on the first lead frame;
a wire electrically connecting the LED chip and the second lead frame; and
a housing disposed on the first lead frame and the second lead frame;
wherein the first lead frame comprises a first protrusion in the first side and the second lead frame comprises a corresponding recess in the second side to increase a mechanical bonding strength with a housing,
wherein at least one portion of the LED chip is disposed within the first protrusion,
wherein the first protrusion is disposed in the middle of the first side,
wherein the corresponding recess is disposed in the middle of the second side,
wherein the second lead frame comprises a pair of second protrusions disposed in the second side at a peripheral of the corresponding recess,
wherein the first protrusion is substantially rectangular and the corresponding recess is substantially rectangular, and
wherein the first protrusion, the corresponding recess, and the pair of second protrusions comprise an uplift portion, respectively.

US Pat. No. 9,853,189

BACKLIGHT MODULE WITH MJT LED AND BACKLIGHT UNIT INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A backlight module comprising:
a printed circuit board (PCB);
a plurality of multi junction technology (MJT) light emitting diodes (LEDs) disposed on the PCB; and
a plurality of optical members respectively disposed over each of the MJT LEDs, each optical member comprising:
a light incident face through which light emitted from the corresponding MJT LED enters the optical member; and
a light exit face through which light exits the optical member at a wider beam angle than that of the corresponding MJT LED,
wherein each of the MJT LEDs comprises:
a first light emitting cell and a second light emitting cell separated from each other on a growth substrate, the second light
emitting cell having a slanted side surface; and

an interconnection line electrically connecting the first light emitting cell to the second light emitting cell in series,
the interconnection line comprising a first connection section for electrical connection to the first light emitting cell
and a second connection section for electrical connection to the second light emitting cell,

wherein each of the optical members further comprises:
a lower surface having a concave section configured for light emitted from the MJT LED to enter the optical member; and
an upper surface comprising a concave surface on a central axis of the optical member, the concave surface having a total
internal reflection surface so as to form an apex on the central axis of the optical member, and

wherein the concave section of the lower surface comprises:
a first concave surface on the central axis;
a second concave surface having a diameter greater than the first concave surface; and
a downwardly protruding surface surrounding the first concave surface of the concave section and connecting the first concave
surface to the second concave surface, the downwardly protruding surface comprising a portion disposed closer to the PCB than
a portion of the second concave surface.

US Pat. No. 10,165,632

LIGHT-EMITTING DIODE DRIVING MODULE, METHOD OF OPERATING THEREOF, AND LIGHTING APPARATUS INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode driving module comprising:an LED driving circuit to activate light-emitting diodes driven by a rectified voltage, and to adjust driving current conducted through driving nodes to the light-emitting diodes depending on a voltage of a driving current setting node; and
a driving current controller to control the voltage of the driving current setting node by outputting a driving current control signal, the driving current controller comprising:
a control signal output circuit connected to a dimming node to receive a dimming signal when the rectified voltage is modulated, and to adjust the driving current control signal depending on the dimming signal;
a mode detector to detect whether the rectified voltage is modulated by receiving a source voltage depending on the rectified voltage, and to enable a selection signal depending on a detection result; and
a power compensator to adjust the driving current control signal depending on the source voltage when the selection signal is enabled.

US Pat. No. 10,074,779

LED MODULE, METHOD FOR MANUFACTURING THE SAME, AND LED CHANNEL LETTER INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) module comprising:a circuit board having an upper surface and a lower surface, the circuit board comprising first and second through holes arranged at opposite corners of the circuit board and extending from the upper surface to the lower surface;
a plurality of LEDs centrally disposed on the upper surface of the circuit board;
a circuit part disposed on a peripheral portion of the circuit board to surround the plurality of LEDs;
a molding cover spaced entirely apart from the plurality of LEDs and extending from the upper surface to the lower surface of the circuit board; and
a light transparent sealant covering the plurality of LEDs,
wherein:
an upper portion of the molding cover is disposed on the upper surface of the circuit board to cover the circuit part;
a portion of the upper portion of the molding cover arranged between the plurality of LEDs and the circuit part has a constant thickness and is inclined to the upper surface of the circuit board; and
an edge portion of the light transparent sealant is bonded to a lower end surface of the upper portion of the molding cover that faces the plurality of LEDs.

US Pat. No. 10,051,705

BACKLIGHT UNIT USING MULTI-CELL LIGHT EMITTING DIODE

Seoul Semiconductor Co., ...

1. A backlight unit comprising:a printed circuit board including a plurality of blocks and a plurality of multi junction technology light emitting diodes (MJT LEDs), at least one of the MJT LEDs disposed on each block; and
a plurality of optical members disposed on the MJT LEDs, each optical member including a light incidence plane through which light emitted from the corresponding MJT LED enters the optical member and a light exit plane through which light exits the optical member at a wider beam angle than that of the corresponding MJT LED,
a backlight control module comprising a drive power generator and a drive controller,
wherein
each MJT LED comprises a plurality of light emitting cells connected to each other via interconnection lines, each light emitting cell comprising a lower semiconductor layer, an upper semiconductor layer disposed on the lower semiconductor layer and an active layer disposed between the upper and lower semiconductor layers,
the drive power generator generates DC drive power using an input voltage supplied from an external power source,
an anode of each block is connected to the drive power generator and a cathode of each block is independently connected to the drive controller,
the drive controller controls a dimming level of the each block in response to a dimming signal and a drive current in a range of 0 to 100%.

US Pat. No. 10,047,930

LIGHT EMITTING MODULE AND LENS

Seoul Semiconductor Co., ...

1. A lens, comprising:an upper surface comprising a curved surface changing a curvature in a direction extending away from a central axis of the lens;
a lower surface comprising a concave portion disposed on the central axis of the lens; and
wherein the concave portion of the lower surface comprises:
an entrance disposed on a lower region of the concave portion and configured to receive light emitted from a light emitting diode chip;
an upper end surface disposed on the upper region of the concave portion; and
a lateral surface extending from the upper end surface to the entrance,
wherein the concave portion comprises a width that narrows in a direction extending away from the entrance,
wherein the closer a point of the lateral surface is to the upper end surface, the closer the point is to the central axis,
wherein the upper end surface of the concave portion is nonplanar,
wherein the nonplanar upper end surface comprises a concave surface disposed on the central axis and a convex surface surrounding the concave surface,
wherein the convex surface of the upper end surface is connected to the lateral surface,
wherein both the concave surface and the convex surface of the upper end surface have a curvature in a cross-section parallel to the central axis of the lens,
wherein a location of a lowest point of the convex surface is lower than that of a point at which the convex surface of the upper end surface and the lateral surface are connected, and
wherein the lens is configured to disperse luminous flux of light emitted from the light emitting diode chip through the entrance in a viewing angle wider than that of light emitted from the light emitting diode chip.

US Pat. No. 10,043,955

LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED), comprising:a substrate;
a semiconductor stacked structure disposed on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
a distributed Bragg reflector (DBR) disposed on the semiconductor stacked structure;
a first insulating layer disposed on a side surface of the DBR; and
a second insulating layer contacting the side surface of the DBR and disposed between the DBR and the first insulating layer,
wherein a hardness of the first insulating layer is greater than a hardness of the second insulating layer.

US Pat. No. 10,024,809

GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD

SixPoint Materials, Inc.,...

1. A method of fabricating a wafer of group III nitride comprising (a) growing a bulk crystal of group III nitride, (b) slicing the bulk crystal into wafers, (c) polishing at least one surface of a wafer selected from said wafers, and (d) directing an X-ray beam to said surface at an angle of less than 15 degrees to the surface to verify the presence of at least one X-ray diffraction peak, wherein the wafer has a surface either oriented with c-plane or misoriented from the c-plane, wherein said surface misorientation is within +/?10 degrees, and wherein the X-ray diffraction is from 114 plane of the group III nitride crystal.

US Pat. No. 10,020,425

LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING SAME

Seoul Semiconductor Co., ...

1. A light emitting diode, comprising:a semiconductor stack comprising a first semiconductor layer, an active layer, and a second semiconductor layer; and
a transparent conductive layer comprising a first transparent conductive layer disposed on the second semiconductor layer and a second transparent conductive layer disposed on the first transparent conductive layer, the second transparent conductive layer having a different electrical conductivity than the first transparent conductive layer,
wherein the first and second transparent conductive layers comprise zinc oxide, and
wherein the transparent conductive layer further comprises:
a first area where the first transparent conductive layer and the second semiconductor layer directly contact each other; and
a second area where the second transparent conductive layer and the second semiconductor layer contact each other and having less conductivity than the first area.

US Pat. No. 10,018,325

LIGHT DEVICE OF VEHICLE

Seoul Semiconductor Co., ...

1. A light device of a vehicle, comprising:a light emitting diode module emitting light and located on a body of the vehicle, the body of the vehicle having two opposing sides for accommodating the light emitting diode module; and a light guide plate having a side on which the light emitted from the light emitting diode module is incident and emitting the light incident on the side to perform surface emission upwardly, wherein the light guide plate has a plane shape including at least one concave portion and convex portion, and the light emitting diode module is installed in the concave portion and/or the convex portion.

US Pat. No. 10,187,945

LED DRIVE CIRCUIT WITH IMPROVED FLICKER PERFORMANCE, AND LED LIGHTING DEVICE COMPRISING SAME

Seoul Semiconductor Co., ...

1. A light emitting diode (LED) lighting device comprising:a rectification unit connected to an alternating current (AC) power source to output a rectified voltage as a first drive voltage to an LED light emitting unit through full-wave rectification of AC voltage applied thereto;
the LED light emitting unit comprising a first LED group to an nth LED group (n being a positive integer of 2 or more) and configured to emit light upon receiving the rectified voltage as the first drive voltage from the rectification unit in a non-compensation interval and to emit light upon receiving a second drive voltage from a loop-back compensation unit in a compensation interval;
the loop-back compensation unit connected at one end thereof to a cathode of one of the first LED group to the (n?1)th LED group through a charge path and to an anode of the one of the first LED group to the (n?1)th LED group through a discharge path, and connected at the other end thereof to an LED drive controller through a constant current switch among a pluarality of constant current switches, the loop-back compensation unit being chargeable with energy using the rectified voltage through the charge path in a charge interval and configured to supply the second drive voltage to the LED light emitting unit through the discharge path in the compensation interval; and
the LED drive controller configured to detect an LED drive current flowing through the plurality of constant current switches connected to the first LED group to the nth LED group, respectively, and controlling sequential driving of the first LED group to the nth LED group based on the detected LED drive current.

US Pat. No. 10,145,606

PRODUCT LIGHTING REFRIGERATION DOOR

Seoul Semiconductor Co., ...

1. A refrigeration unit comprising:a refrigeration door, the refrigeration door comprising:
a light source;
a window portion configured to receive light from the light source at a first face, wherein the light exhibits total internal reflection within the window portion;
a plurality of uniformly sized prisms that are non-uniformly spaced apart and each prism comprising a first prism face and a second prism face, the first prism face is configured to eject light outside of the window portion from a second face of the window portion, on which the prisms are disposed, at an angle of about 60 degrees; and
a reflective coating disposed on a third face of the window portion opposite to the first face and configured to reflect light back into the window portion,
wherein:
the second prism face is configured to eject the reflected light outside of the window portion from the second face of the window portion at an angle of about 30 degrees;
a distance between the prisms decreases as the prisms are disposed further away from the first face; and
the uniformly sized prisms are disposed only on the second face of the window portion, and
the first prism face and the second prism face of each of the uniformly-sized prisms form a prism having 90°/30°/60° angles with the second face of the window portion.

US Pat. No. 10,094,535

LIGHT DIFFUSING LENS HAVING A LOWER CONCAVE DEPRESSED INCIDENT PORTION AND AN UPPER CONCAVE DEPRESSED REFLECTIVE PORTION AND LIGHT EMITTING DEVICE HAVING THE SAME

Seoul Semiconductor Co., ...

1. A light diffusing lens, comprising:a light incident portion having a concave shape depressed inwards from a lower portion of the light diffusing lens;
a reflective portion having a concave shape depressed inwards from an upper portion of the light diffusing lens; and
a light exit portion defined by an outer side surface of the light diffusing lens,
wherein the light incident portion comprises a first convex face bulging in a direction of an optical axis defined by a straight line passing through a center of the light diffusing lens,
wherein the first convex face of the light incident portion extends directly from an inner apex of the light incident portion to a bottom surface of the light diffusing lens, and wherein an internal angle defined between the light exit portion and the bottom surface of the light diffusing lens is less than 90° C.

US Pat. No. 10,161,059

GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD

SixPoint Materials, Inc.,...

1. A method of growing a bulk crystal of group III nitride having a composition of Gax1Aly1In1-x1-y1N (0?x1?1, 0?x1+y1?1) comprising,(a) preparing using heteroepitaxial deposition at least one seed crystal of Gax2Aly2In1-x2-y2N (0?x2?1, 0?x2+y2?1) having basal planes of c-orientation with miscut angle less than 5 degrees and all exposed sidewalls of m-orientation with miscut angle less than 5 degrees, wherein the seed crystal is formed by a vapor phase method and at least one of the sidewalls is obtained by cleavage along m-plane or mechanical dicing along m-plane and removal of mechanical damage;
(b) growing the bulk crystal of group III nitride on at least one basal plane of the seed crystal in supercritical ammonia without creating cracks above the sidewalls of the seed crystal, wherein the bulk crystal has a thickness greater than 1 mm.

US Pat. No. 10,119,671

LIGHT EMITTING DEVICE AND VEHICULAR LAMP INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A vehicular lamp comprising:a combination lamp; and
a main lamp,
wherein at least one of the combination lamp and the main lamp comprises:
a light emitting unit;
a sidewall surrounding a side surface of the light emitting unit and adjoining the side surface thereof; and
a substrate disposed at a lower side of the light emitting unit and supporting the light emitting unit and the sidewall,
wherein the light emitting unit comprises:
a light emitting element comprising at least two light emitting cells;
a wavelength converter disposed on the light emitting element and covering at least part of an upper surface of the light emitting element;
a first pad electrode electrically connected to at least one of the light emitting cells; and
a second pad electrode electrically connected to the other light emitting cell,
wherein the sidewall has a protruding portion formed at an edge thereof,
wherein the substrate comprises a base and first and second electrodes electrically connected to an external electrode to supply electric power to the light emitting unit, the first electrode and the second electrode being at least partially exposed,
wherein the at least two light emitting cells are electrically connected to each other and each comprise an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.

US Pat. No. 10,096,647

DISPLAY APPARATUS HAVING A PLURALITY OF REFLECTIVE ELECTRODES

Seoul Semiconductor Co., ...

1. A display apparatus comprising:a light emitting diode part comprising a plurality of regularly arranged light emitting diodes; and
a thin-film transistor (TFT) panel part configured to drive the light emitting diode part,
wherein the light emitting diode part comprises:
a transparent electrode;
the light emitting diodes regularly disposed on a first surface of the transparent electrode and electrically connected to the transparent electrode;
a plurality of first reflective electrodes disposed at sides of the light emitting diodes, surrounding the light emitting diodes, and electrically connected to the transparent electrode; and
a plurality of second reflective electrodes electrically connected to the light emitting diodes, respectively, and reflecting light emitted from the light emitting diodes.

US Pat. No. 10,219,333

BACKLIGHT MODULE WITH MJT LED AND BACKLIGHT UNIT INCLUDING THE SAME

Seoul Semiconductor Co., ...

1. A direct type backlight unit disposed under a liquid crystal panel, comprising:a backlight module comprising:
a printed circuit board comprising blocks arranged in an M×N matrix, M and N being natural numbers of 2 or greater;
light emitting devices disposed on the printed circuit board such that at least one light emitting device is disposed in each of the blocks, each of the light emitting devices comprising light emitting cells disposed on a single substrate; and
optical members disposed on the light emitting devices, each of the optical members being configured to change a light beam distribution of a corresponding light emitting device; and
a backlight control module configured to control dimming levels of the light emitting devices and to independently control the light emitting devices disposed in different blocks,
wherein the light emitting devices in the blocks are not electrically connected to each other in series or in parallel.

US Pat. No. 10,201,055

LED MODULE

Seoul Semiconductor Co., ...

1. A light-emitting diode (LED) module, comprising:LEDs driven by pulsating voltage generated from an alternating current (AC) power; and
LED groups, each of the LED groups comprising at least two of the LEDs,
wherein the LED module is configured to divide one cycle of the AC power into sections and sequentially turn on the LED groups based on the sections of the one cycle of the AC power,
wherein color temperatures of the at least two LEDs have a range of deviation from a central color temperature, and
wherein a single LED group has a first LED of a first color temperature connected in series to a second LED of a second color temperature different from the first color temperature and connected in parallel to a third LED of the first color temperature.

US Pat. No. 10,163,975

LIGHT EMITTING APPARATUS

Seoul Semiconductor Co., ...

1. A light emitting apparatus, comprising:a light-transmissive substrate comprising a top surface and a bottom surface;
at least one semiconductor light emitting device adhered with an adhesive material to the top surface of the light-transmissive substrate;
a reflector disposed over the semiconductor light emitting device and comprising a concave curved surface;
a first wavelength converter disposed on the concave curved surface between the light-transmissive substrate and the reflector; and
a second wavelength converter disposed directly on the bottom surface of the light-transmissive substrate,
wherein the first wavelength converter converts a wavelength of light emitted in a first direction from the semiconductor light emitting device to the first wavelength converter and the second wavelength converter converts a wavelength of light emitted in a second direction from the semiconductor light emitting device to the second wavelength converter through the adhesive material and the light-transmissive substrate.