US Pat. No. 9,356,462

BATTERY CHARGING APPARATUS

HONDA MOTOR CO., LTD., T...

1. A battery charging apparatus, comprising:
a plurality of input terminals configured to be respectively connected to output terminals of respective phases of a three-phase
AC dynamo;

a rectifying circuit comprising a plurality of rectifying elements and a plurality of switching elements;
a switching element control unit configured to control turning on/off respective switching elements of the rectifying circuit;
and

a pulse generation unit configured to generate a pulse signal by detecting passage of a reluctor disposed on a rotor of the
three-phase AC dynamo,

wherein the switching element control unit is configured to control the plurality of switching elements to set output voltages
to a battery in a full-wave rectification state or an all-phase short-circuited state, and

wherein the switching element control unit comprises:
a potential difference detection unit configured to simultaneously detect potential differences between potentials of at least
two input terminals of the plurality of input terminals and a ground potential of the battery, and configured to generate
signals indicating the detected potential differences; and

a specifying unit configured to determine a combination pattern of phases of the three-phase AC outputs input to the input
terminals and the signals generated by the potential difference detection unit, and specifying a phase of the three-phase
AC outputs input to the plurality of input terminals calculated from a relationship among the combination pattern, a generation
timing of the pulse signal, and rise timings of the signals.

US Pat. No. 9,439,296

ELECTRICAL EQUIPMENT, PRODUCTION METHOD THEREOF AND DESIGN METHOD OF ELECTRICAL EQUIPMENT

Shindengen Electric Manuf...

1. Electrical equipment comprising:
a chassis that has a bottom portion and a plurality of side portions and is opened upward;
a printed circuit board in which a resin injection hole that penetrates in a thickness direction is provided, and that is
stored in the chassis such that one principal surface faces an inner surface of the bottom portion;

a sealing resin that is filled in an internal space formed by the chassis and the printed circuit board, coats the other principal
surface of the printed circuit board and embeds the printed circuit board; and

a flow suppression portion that decreases a drift velocity of the sealing resin pressed into the internal space through the
resin injection hole before the sealing resin is hardened, and that is provided in at least part of a region from a position
immediately below the resin injection hole in the inner surface of the bottom portion to an inner surface of a side portion
closest to the resin injection hole among the plurality of side portions.

US Pat. No. 9,544,958

LED DRIVER CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. An LED driver circuit that controls driving of an LED lamp in response to an on/off state of a mechanical switch device,
comprising:
a first terminal to which a current path of the switch device is connected at one end thereof;
a second terminal to which the current path of the switch device is connected at another end thereof, the switch device and
a battery being connected in series between the first terminal and the second terminal;

a detection circuit that periodically detects a current flowing to the first terminal and outputs a detection signal responsive
to a result of the detection at a first node;

a comparison circuit that compares a detection voltage responsive to the detection signal with a threshold voltage and outputs
a comparison result signal responsive to a result of the comparison; and

a control circuit that controls a current detection operation of the detection circuit and controls driving of the LED lamp
based on the comparison result signal,

wherein the control circuit determines that the switch device is in an on state and the current path is conductive between
the one end and the another end if the comparison result signal indicates that the detection voltage is equal to or higher
than the threshold voltage, and

determines that the switch device is in an off state and the current path is interrupted between the one end and the another
end if the comparison result signal indicates that the detection voltage is lower than the threshold voltage,

wherein the detection circuit comprises:
a first switch element that is connected to the first terminal at one end thereof and is turned on and off under the control
of the control circuit;

a detection capacitor that is connected to another end of the first switch element at one end thereof and to the first node
at another end thereof;

a detection resistor that is connected to the first node at one end thereof and to the second terminal at another end thereof;
and

a discharge resistor that is connected in parallel with the detection resistor and the detection capacitor between another
end of the first switch element and the second terminal, the discharge resistor being connected to the another end of the
first switch element at one end thereof and to the second terminal at another end thereof,

the control circuit
controls the first switch element to periodically switch on and off, and
the detection circuit
outputs the detection signal at the first node.

US Pat. No. 9,224,645

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SHINDENGEN ELECTRIC MANUF...

4. A method for manufacturing a silicon carbide semiconductor device for manufacturing the silicon carbide semiconductor device;
the method comprising the steps in the following order:
a conductive layer forming step where the conductive layer is formed on a silicon carbidelayer;
a heat treatment step where the silicon carbide layer and the conductive layer are made to react with each other thus forming
a reaction layer which is in contact with the silicon carbide layer and a silicide layer which is present on the reaction
layer;

a first plasma ashing step where a carbon component which the silicide layer contains is removed;
an etching step where at least a portion of the silicide layer is removed using an acid thus exposing at least a portion of
a surface of the reaction layer;

a second plasma ashing step where a carbon component which remains on the reaction layer is removed and a conductive oxidation
layer which is in contact with the reaction layer is formed on the reaction layer; and

an electrode layer forming step where an electrode layer is formed over the exposed reaction layer with the conductive oxidation
layer interposed therebetween.

US Pat. No. 9,099,483

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

17. A semiconductor device comprising:
a semiconductor element having a pn junction exposure portion where a pn junction is exposed; and
a glass layer which is formed such that the glass layer covers the pn junction exposure portion, wherein
the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2,
B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metal selected from a group consisting of CaO, MgO and BaO, and
substantially contains none of Pb, P, As, Sb, Li, Na and K, and

the glass composition for protecting a semiconductor junction contains 55 mol % or more of SiO2 and B2O3 in total.

US Pat. No. 9,112,423

BIDIRECTIONAL DC-DC CONVERTER AND POWER SUPPLY SYSTEM

Shindengen Electric Manuf...

1. A bidirectional DC-DC converter, comprising:
a first low voltage-side input/output terminal and a second low voltage-side input/output terminal;
a low voltage-side rectifying circuit connected to the first low voltage-side input/output terminal and the second low voltage-side
input/output terminal;

a first high voltage-side input/output terminal and a second high voltage-side input/output terminal;
a high voltage-side rectifying circuit connected to the first high voltage-side input/output terminal and the second high
voltage-side input/output terminal;

a transformer connected between the low voltage-side rectifying circuit and the high voltage-side rectifying circuit; and
a controlling circuit that controls operations of switching elements in the low voltage-side rectifying circuit and the high
voltage-side rectifying circuit, wherein the controlling circuit achieves soft switching of a switching element in the high
voltage-side rectifying circuit in a step-down operation,

wherein the low voltage-side rectifying circuit comprises:
a first switching element connected to the first low voltage-side input/output terminal at one end thereof;
a second switching element connected to the first low voltage-side input/output terminal at one end thereof;
a third switching element connected to the other end of the first switching element at one end thereof and to the second low
voltage-side input/output terminal at the other end thereof; and

a fourth switching element connected to the other end of the second switching element at one end thereof and to the second
low voltage-side input/output terminal at the other end thereof;

wherein the high voltage-side rectifying circuit comprises: a fifth switching element connected to the first high voltage-side
input/output terminal at one end thereof;

a sixth switching element connected to the first high voltage-side input/output terminal at one end thereof;
a seventh switching element connected to the other end of the fifth switching element at one end thereof and to the second
high voltage-side input/output terminal at the other end thereof; and

an eighth switching element connected to the other end of the sixth switching element at one end thereof and to the second
high voltage-side input/output terminal at the other end thereof;

wherein the transformer comprises:
a first winding connected to the other end of the first switching element at one end thereof and to the other end of the second
switching element at the other end thereof to form the transformer; and

a second winding connected to the other end of the fifth switching element at one end thereof to form the transformer; and
wherein, in the step-down operation, the controlling circuit turns on the second and third switching elements from a state
where the first to eighth switching elements are turned off, and then turns on the fifth and eighth switching elements; and

in the step-down operation, the controlling circuit turns off the first to eighth switching elements, and then turns off the
second, third, fifth and eighth switching elements from the state where the second, third, fifth and eighth switching elements
are turned on.

US Pat. No. 9,242,611

VEHICLE POWER SUPPLY SYSTEM, ENGINE CONTROL UNIT, AND POWER SUPPLY METHOD

Shindengen Electric Manuf...

1. A vehicle power supply system, comprising:
a control switch that is turned on/off by a user;
a starter switch that is turned on/off by the user;
a relay circuit that is turned on by energizing a coil having a first end connected to a first end of the control switch,
thereby making a first electrical connection between a battery connecting terminal connected to a battery and a first end
of the starter switch, and a second electrical connection between the battery connecting terminal and a first end of a first
load, and is turned off by deenergizing the coil so as to interrupt the battery connecting terminal from the first end of
the starter switch and the first end of the first load; and

an engine control unit that controls power supplied from the battery and a motor generator,
wherein the engine control unit comprises:
a three-phase bridge circuit that has a first end connected to the first end of the first load and a second end connected
to a ground, the three-phase bridge circuit performing commutation control on an alternating-current power supplied from the
motor generator or driving the motor generator;

a DC-DC converter connected between the first end of the three-phase bridge circuit and a second end of the control switch;
a diode that has an anode connected to the battery connecting terminal and a cathode connected to the second end of the control
switch;

a voltage detecting circuit that detects a voltage of the battery connecting terminal;
a first switch element connected between a second end of the coil and the ground;
a second switch element connected between a second end of the first load and the ground; and
a control circuit that is supplied with a direct-current power supplied to the first end of the control switch and controls
the three-phase bridge circuit and the first and second switch elements, and

wherein the DC-DC converter has a first end connected to the first end of the first load and the first end of the three-phase
bridge circuit, and has a second end connected to the cathode of the diode and the second end of the control switch.

US Pat. No. 9,496,366

METHOD FOR MANUFACTURING SILICON CARBIDE (SIC) SEMICONDUCTOR DEVICE BY INTRODUCING NITROGEN CONCENTRATION OF 5X1019 CM-3 OR MORE AT A BOUNDARY SURFACE BETWEEN THERMAL OXIDE FILM AND THE SIC SUBSTRATE AND THEN REMOVING THE THERMAL O

SHINDENGEN ELECTRIC MANUF...

1. A method for manufacturing a silicon carbide semiconductor device comprising the steps in the following order:
a first step of forming a thermal oxide film on one surface of an SiC substrate by thermal oxidation at a temperature of 1150°
C. or above in a gas atmosphere including molecules which contain nitrogen and oxygen, and introducing nitrogen to said one
surface of the SiC substrate in the course of forming the thermal oxide film;

a second step of forming an n++ type SiC layer on said one surface of the SiC substrate such that the thermal oxide film is
removed from said one surface of the SiC substrate by etching and, thereafter, said one surface of the SiC substrate is exposed
to radicals so that Si—N bonded bodies and C—N bonded bodies which are formed on said one surface of the SiC substrate in
the course of introducing nitrogen into said one surface of the SiC substrate are removed while leaving nitrogen introduced
into a lattice of SiC out of the nitrogen introduced into said one surface of the SiC substrate; and

a third step of forming an ohmic electrode layer on said one surface of the SiC substrate
wherein the first step is carried out under a condition where nitrogen concentration on a boundary surface between the thermal
oxide film and the SiC substrate is 5×1019 cm?3 or more.

US Pat. No. 10,257,920

SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A semiconductor device comprising:a substrate that is annular or partially annular, the substrate having an inner circumferential portion arcuate in plan view and an outer circumferential portion arcuate in plan view;
a first phase control circuit on the substrate, the first phase control circuit being configured to control a first phase of a plurality of phases of a motor;
a second phase control circuit on the substrate so as to be adjacent to the first phase control circuit in a circumferential direction of the substrate, the second phase control circuit being configured to control a second phase of the plurality of phases of the motor, the second phase being different from the first phase;
a power supply wiring on one of an outer circumferential side and an inner circumferential side of the first phase control circuit and the second phase control circuit in a radial direction of the substrate, the power supply wiring being connected to the first phase control circuit and the second phase control circuit, and the power supply wiring extending in the circumferential direction of the substrate; and
a ground wiring on an other one of the outer circumferential side and the inner circumferential side of the first phase control circuit and the second phase control circuit in the radial direction of the substrate, the ground wiring being connected to the first phase control circuit and the second phase control circuit, and the ground wiring extending in the circumferential direction of the substrate, wherein
the substrate is attachable onto, and detachable from, the motor, the substrate having a first region on the inner circumferential portion side, a second region on the outer circumferential portion side, and a third region between the first region and the second region, the first region being annular or partially annular, the second region being annular or partially annular, and the third region being annular or partially annular,
one of the power supply wiring and the ground wiring is on the first region,
an other one of the power supply wiring and the ground wiring is on the second region, and
the first region, the second region, and the third region are on a single flat surface of the substrate.

US Pat. No. 9,318,401

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A glass composition for protecting a semiconductor junction which is used for forming a glass layer to cover a pn junction
exposure portion of a silicon-made semiconductor element having the pn junction exposure portion where a pn junction is exposed,
the glass composition comprising:
fine glass particles prepared from a material in a molten state obtained by melting a glass material which contains at least
SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metals selected from the group consisting of CaO, MgO and BaO, and substantially
contains none of Pb, As, Sb, Li, Na and K, wherein

the glass composition further contains nickel oxide,
the content of SiO2 falls within a range of 49.5 mol % to 64.3 mol %,

the content of B2O3 falls within a range of 8.4 mol % to 17.9 mol %,

the content of Al2O3 falls within a range of 3.7 mol % to 14.8 mol %,

the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %, and
the content of the oxides of alkaline earth metals falls within a range of 7.4 mol % to 12.9 mol %, and
an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6.

US Pat. No. 9,601,563

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a semiconductor substrate of a first conductive type, the semiconductive substrate having a first surface;
a guard rind of a second conductivity type opposite to the first conductivity type, the guard ring having a first portion
and a second portion, the first portion being in the semiconductor substrate and adjacent to the first surface and

the second portion being on the semiconductor substrates, and adjacent to the first surface; and
a metal layer on the semiconductive substrate, the metal layer adjacent to the first surface and forming a Schottky junction
with the semiconductor substrate so as to be electrically connected to the second portion,

wherein the metal layer has a cross-section that is rectangular when viewed in a vertical direction,
a thickness from a bottom surface of the semiconductor substrate to a bottom surface of the metal layer is smaller than a
thickness from the bottom surface of the semiconductor substrate to an uppermost surface of the guard ring,

the first portion of the guard ring includes a first region and a second region connected to the first region, and
the first region is closer to the metal layer than the second region, and
the second region is larger in depth in the vertical direction of the semiconductor substrate than the first region.

US Pat. No. 9,455,231

RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. A resin-sealed semiconductor device comprising:
a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn-junction exposure portion
in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral
tapered region; and

a molding resin which seals the mesa-type semiconductor element, wherein
the glass layer is formed by forming a layer made of a glass composition for protecting a semiconductor junction such that
the layer covers the outer peripheral tapered region and, subsequently, by baking the layer made of the glass composition
for protecting a semiconductor junction, wherein

the glass composition for protecting a semiconductor junction is made of fine glass particles prepared from a material in
a molten state obtained by melting a raw material which contains at least nickel oxide, SiO2, Al2O3, B2O3, ZnO, CaO, BaO and MgO, contents of the respective components being set as described below, substantially contains none of
Pb, As, Sb, Li, Na and K, and contains none of the components of the raw material as a filler, and

the content of SiO2: 49.5 mol % to 64.3 mol %

the content of Al2O3: 3.7 mol % to 14.8 mol %

the content of B2O3: 8.4 mol % to 17.9 mol %

the content of ZnO: 3.9 mol % to 14.2 mol %
the content of oxides of alkaline earth metals: 7.4 mol % to 12.9 mol %,wherein
the content of BaO falls within a range of 2.6 mol % to 5.3 mol %.

US Pat. No. 9,190,365

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A glass composition for protecting a semiconductor junction, wherein the glass composition for protecting a semiconductor
junction is made of fine glass particles prepared from a material in a molten state obtained by melting a raw material which
contains at least SiO2, B2O3, Al2O3 and oxide of alkaline earth metal and substantially contains none of Pb, As, Sb, Li, Na, K and Zn, and contains no filler.

US Pat. No. 9,242,566

BRUSHLESS MOTOR CONTROL APPARATUS AND BRUSHLESS MOTOR CONTROL METHOD

SHINDENGEN ELECTRIC MANUF...

1. A brushless motor control apparatus configured to drive-control a three-phase brushless motor, and rectify and phase-control
alternate current output voltages output from the three-phase brushless motor to charge a battery in a case where the three-phase
brushless motor is rotary-driven by an engine and operates as a three-phase alternate current power generator, the brushless
motor control apparatus comprising:
a three-phase bridge circuit having arms each including a switching element and a diode coupled in inverse parallel to the
switching element;

a phase voltage detector configured to detect a phase voltage of any one phase of phases of the three-phase brushless motor;
a zero-cross point detector configured to detect zero-cross points of the phase voltage of said any one phase detected by
the phase voltage detector;

a number of engine rotations measurer configured to measure a number of rotations of the engine based on a cycle of the zero-cross
points detected by the zero-cross point detector;

a phase control regulator unit configured to, when the number of rotations of the engine is greater than or equal to a first
number of rotations at which the zero-cross points become unable to be detected, rectify and phase-control the alternate current
output voltages of respective phases output from the three-phase brushless motor, and supply the alternate current output
voltages to the battery; and

a short regulator unit configured to, when the number of rotations of the engine is smaller than the first number of rotations
and when a charged voltage of the battery is greater than or equal to a predetermined determination reference voltage, control
the switching elements of the three-phase bridge circuit to perform interphase short circuit of the alternate current output
voltages output from the three-phase brushless motor, or control the switching elements to be collectively turned off.

US Pat. No. 9,401,618

CONTROL CIRCUIT, AND POWER GENERATION DEVICE HAVING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. A control circuit for controlling electric power supplied from an alternating-current generator driven by an internal-combustion
engine to a load, wherein,
a single cycle of the internal-combustion engine includes a plurality of strokes, and a state of the alternating-current generator
shifts as the stroke of the internal-combustion engine shifts, and

the circuit comprises:
a rate-of-change obtaining unit configured to obtain a rate of change of duration of a first state with respect to duration
of a second state, when the state of the alternating-current generator shifts from the second state to the first state;

a estimation unit configured to estimate the duration of the first state when the state of the alternating-current generator
shifts from the second state to the first state, based on the duration of the second state, and on the rate of change obtained
by the rate-of-change obtaining unit in a previous cycle of the internal-combustion engine; and

an output-supply control unit configured to control supply of an output from the alternating-current generator to the load
using a result of the estimation by the estimation unit.

US Pat. No. 9,285,410

CONTROL CIRCUIT, AND POWER GENERATION DEVICE HAVING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. A control circuit for determining a phase sequence of an n-phase alternating-current generator (having n phases and where
n is an integer satisfying n?2), the phase sequence relating to an order of output voltages respectively outputted from the
phases, the control circuit comprising:
a determination unit configured to determine the phase sequence of the n-phase alternating-current generator by detecting
timing at which an output voltage outputted from each of the n phases either exceeds or falls below a predetermined threshold
value and

a cycle obtaining unit configured to obtain a cycle of the output voltages respectively outputted from the phases of the n-phase
alternating-current generator, wherein

assuming that time resulting from division of the cycle obtained by the cycle obtaining unit by the n is specific time,
the determination unit performs a phase determination procedure for obtaining one phase, out of the n phases, in which the
output voltage has become no lower than the predetermined threshold voltage during a period from a time point that is x times
of the specific time before predetermined reference timing (where x is an integer satisfying 0?x?n?1 to a time point that
is (x+1) times of the specific time before the reference timing.

US Pat. No. 9,245,753

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising the steps of:
forming a semiconductor layer on a first main surface of a semiconductor substrate made of crystals of silicon carbide;
forming lattice defects on a second main surface on a side opposite to the first main surface of the semiconductor substrate;
forming a conductive layer made of graphite on the second main surface by emitting a laser beam having a longer wavelength
than an absorption edge wavelength, which is a wavelength of a light having the lowest energy which the crystals absorb, to
the second main surface of the semiconductor substrate so that silicon is evaporated from the semiconductor substrate, after
the step of forming the lattice defects; and

forming an electrode on the second main surface of the semiconductor after the step of forming a conductive layer made of
graphite.

US Pat. No. 9,337,673

BATTERY CHARGING APPARATUS AND METHOD OF CONTROLLING BATTERY CHARGING APPARATUS

Shindengen Electric Manuf...

1. A battery charging apparatus that controls charging of a battery by an alternating-current generator, comprising:
a first generator terminal to which a first output of the alternating-current generator is connected;
a second generator terminal to which a second output of the alternating-current generator is connected;
a first battery terminal to which a positive electrode side of the battery is connected in a normal connection condition of
the battery;

a second battery terminal to which a negative electrode side of the battery is connected in the normal connection condition
of the battery, the battery and a fuse being connected in series with each other between the first battery terminal and the
second battery terminal;

a rectifying circuit that has a first switch element connected to the first battery terminal at a first end thereof and to
the first generator terminal at a second end thereof, a second switch element connected to the first battery terminal at a
first end thereof and to the second generator terminal at a second end thereof, a first rectifying element connected to the
first generator terminal at a first end thereof and to the second battery terminal at a second end thereof, and a second rectifying
element connected to the second generator terminal at a first end thereof and to the second battery terminal at a second end
thereof, rectifies an output current of the alternating-current generator and outputs the rectified output current to the
first battery terminal;

a detecting circuit that detects a reverse connection condition of the battery in which the negative electrode side of the
battery is connected to the first battery terminal and the positive electrode side of the battery is connected to the second
battery terminal, and controls either of the first switch element and the second switch element based on a detection result;
and

a controlling circuit that controls the first switch element and the second switch element of the rectifying circuit to rectify
the output current of the alternating-current generator,

wherein in a case when the controlling circuit stops controlling the first switch element and the second switch element, and
the first switch element and the second switch element are turned off,

the detecting circuit forcedly turns on at least one of the first switch element and the second switch element when the detecting
circuit detects the reverse connection condition of the battery.

US Pat. No. 9,287,393

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

15. A semiconductor device provided with an active element part and a gate pad part defined on a semiconductor substrate which
is formed by laminating a low resistance semiconductor layer of a first conductive type or a second conductive type and a
drift layer of the first conductive type to each other, wherein
the active element part includes:
the low resistance semiconductor layer;
the drift layer formed on the low resistance semiconductor layer;
a base region of the second conductive type formed on a surface of the drift layer;
a plurality of trenches formed such that the trenches open at the base region and reach the drift layer;
a high concentration impurity diffusion region of the first conductive type arranged within the base region, exposing at least
a portion thereof on inner peripheral surfaces of the trenches; a gate insulation layer formed on the inner peripheral surfaces
of the trenches;

a gate electrode layer embedded into the inside of the trenches with the gate insulation layer interposed therebetween; and
a first electrode layer formed in contact with a surface of the high concentration impurity diffusion region and a surface
of the base region in a state where the first electrode layer is insulated from the gate electrode layer with an interlayer
insulation layer interposed therebetween, and

the gate pad part includes:
the low resistance semiconductor layer; the drift layer formed on the low resistance semiconductor layer;
a conductor layer formed above the drift layer over a whole area of the gate pad part with a field insulation layer interposed
therebetween; and

a gate oscillation suppressing structure formed on the surface of the drift layer, wherein
the gate oscillation suppressing structure includes:
a first impurity diffusion region of the second conductive type which is disposed along an outer peripheral portion of the
gate pad part and is electrically connected with the first electrode layer and a second impurity diffusion region of the second
conductive type in a floating state and an impurity non-diffusion region of the second conductive type which are alternately
formed in a region surrounded by the first impurity diffusion region of the second conductive type.

US Pat. No. 9,247,606

LED ILLUMINATION DIMMING CIRCUIT AND LED ILLUMINATION DIMMING METHOD

Shindengen Electric Manuf...

1. An LED illumination dimming circuit that controls dimming of an LED element, comprising:
a power supply terminal to which a power supply voltage is supplied;
a ground terminal connected to a ground;
a first output terminal that is connected to the power supply terminal and to which an anode side of the LED element is connected;
a second output terminal to which a cathode side of the LED element is connected;
a capacitor connected to the first output terminal at a first end thereof and to the second output terminal at a second end
thereof;

a coil connected to the second end of the capacitor at a first end thereof;
a switch element connected to a second end of the coil at a first end thereof;
a resistor connected to a second end of the switch element at a first end thereof and to the ground terminal at a second end
thereof;

a diode connected to the power supply terminal at a cathode thereof and to the second end of the coil at an anode thereof;
and

a controlling circuit that controls an operation of the switch element with a switch controlling signal depending on a dimming
signal that indicates a dimming rate of the LED element, a detection voltage responsive to a voltage drop in the resistor
and a detection current flowing through the coil,

wherein the controlling circuit
fixes a switching period, which consists of an on-period in which the switch element is turned on and an off-period in which
the switch element is turned off, in a first mode in which the dimming signal indicates a first dimming rate,

reduces the switching period while maintaining a ratio between the on-period and the off-period when the dimming rate indicated
by the dimming signal decreases in a second mode in which the dimming signal indicates a dimming rate in a first dimming section
from the first dimming rate to a second dimming rate lower than the first dimming rate,

reduces the on-period while keeping the off-period fixed when the dimming rate indicated by the dimming signal decreases in
a third mode in which the dimming signal indicates a dimming rate in a second dimming section from the second dimming rate
to a third dimming rate lower than the second dimming rate,

increases the off-period while reducing the on-period when the dimming rate indicated by the dimming signal decreases in a
fourth mode in which the dimming signal indicates a dimming rate in a third dimming section from the third dimming rate to
a fourth dimming rate lower than the third dimming rate,

fixes the on-period and fixes the off-period at a period that is longer than the off-period in the fourth mode in a fifth
mode in which the dimming signal indicates the fourth dimming rate,

determines that a control mode of the LED illumination dimming circuit is the first mode if a value of the dimming signal
is equal to or higher than a first threshold, and

determines that the control mode is the second mode if the value of the dimming signal is equal to or higher than a second
threshold lower than the first threshold and is lower than the first threshold.

US Pat. No. 9,236,318

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising, in the following order:
a first step of preparing a semiconductor element having a pn junction exposure portion where a pn junction is exposed; and
a second step of forming a glass layer such that the glass layer covers the pn junction exposure portion, wherein
in the second step, the glass layer is formed using a glass composition for protecting a semiconductor junction made of fine
glass particles prepared from a material in a molten state obtained by melting a glass raw material which contains at least
ZnO, SiO2, B2O3, Al2O3 and at least two oxides of alkaline earth metals selected from a group consisting of BaO, CaO and MgO with the following contents
and substantially contains none of Pb, As, Sb, Li, Na and K, the glass composition for protecting a semiconductor junction
containing no filler.

ZnO: 30 mol % to 60 mol %
SiO2: 5 mol % to 45 mol %

B2O3: 5 mol % to 30 mol %

Al2O3: 5 mol % to 13 mol %

oxide of alkaline earth metal: 1 mol % to 10 mol %.

US Pat. No. 9,150,149

DIRECTION INDICATING APPARATUS

Shindengen Electric Manuf...

1. A direction indicating apparatus, comprising:
a pulse signal generating part that generates a pulse signal;
a first switching element having a first end to which a power supply voltage is supplied, a control terminal to which the
pulse signal is supplied and a second end at which a driving current having a magnitude corresponding to an amplitude of the
pulse signal is output;

a direction indicating switch that has a first terminal, a second terminal and a third terminal and is capable of switching
among a state where the first terminal and the second terminal are electrically connected to each other, a state where the
first terminal and the third terminal are electrically connected to each other and a state where the first terminal, the second
terminal and the third terminal are electrically disconnected from each other, the first terminal being connected to the second
end of the first switching element;

a first direction indicating lamp unit that includes a first LED element, is connected to the second terminal at a first end
thereof and to a ground at a second end thereof, and lights up when a current flows therethrough;

a second direction indicating lamp unit that includes a second LED element, is connected to the third terminal at a first
end thereof and to the ground at a second end thereof, and lights up when a current flows therethrough;

a break detecting part that makes the pulse signal generating part change a period of the pulse signal when the driving current
corresponding to a pulse wave of the pulse signal is equal to or lower than a predetermined break detection value;

a lighting state detecting part that detects a lighting state of the first direction indicating lamp unit and the second direction
indicating lamp unit;

an indicator part having one or a plurality of indicators that light up when a current flows therethrough; and
an indicator driving part that drives the one indicator and makes the one indicator light up in response to the lighting state
detected by the lighting state detecting part or drives at least any of the plurality of indicators and makes the indicator
light up in response to the lighting state;

wherein the indicator part has a first indicator and a second indicator; and
the indicator driving part drives the first indicator and makes the first indicator light up in a first light-up period in
which the first direction indicating lamp unit lights up and does not drive the first indicator and does not make the first
indicator light up in a first light-off period in which the first direction indicating lamp unit does not light up, and the
indicator driving part drives the second indicator and makes the second indicator light up in a second light-up period in
which the second direction indicating lamp unit lights up and does not drive the second indicator and does not make the second
indicator light up in a second light-off period in which the second direction indicating lamp unit does not light up; and

wherein the lighting state detecting part detects that the first direction indicating lamp unit lights up if a voltage at
the first end of the first direction indicating lamp unit is equal to or higher than a predetermined first threshold voltage
and detects that the first direction indicating lamp unit does not light up if the voltage at the first end of the first direction
indicating lamp unit is lower than the first threshold voltage, and the lighting state detecting part detects that the second
direction indicating lamp unit lights up if a voltage at the first end of the second direction indicating lamp unit is equal
to or higher than a predetermined second threshold voltage and detects that the second direction indicating lamp unit does
not light up if the voltage at the first end of the second direction indicating lamp unit is lower than the second threshold
voltage.

US Pat. No. 9,142,624

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a semiconductor base body having the structure where a first semiconductor layer of a first conductive type and a second semiconductor
layer of a first conductive type containing an impurity of a first conductive type at a concentration lower than a concentration
of the impurity of the first conductive type contained in the first semiconductor layer are laminated to each other in this
order;

a high concentration diffusion region of a second conductive type selectively formed on a surface of the second semiconductor
layer, and containing an impurity of a second conductive type opposite to the conductive type of the impurity of the first
conductive type at a concentration higher than a concentration of the impurity of the first conductive type which the second
semiconductor layer contains; and

a barrier metal layer formed on a surface of the second semiconductor layer and a surface of the high concentration diffusion
region, forming a Schottky junction between the barrier metal layer and the second semiconductor layer, and forming an ohmic
junction between the barrier metal layer and the high concentration diffusion region, wherein

heavy metal is diffused into the semiconductor base body such that a concentration of heavy metal becomes maximum in a surface
of the second semiconductor layer, by forming a mask on the surface of the second semiconductor layer, by forming a mask on
the surface of the second semiconductor layer, by forming a heavy metal diffusion source layer on the surface of the first
semiconductor layer and by applying thermal treatment to the semiconductor base body, wherein

assuming
a depth position in the surface of the second semiconductor layer as D1,
a depth position in a deepest portion of the high concentration diffusion region as D2,
a depth position which is deeper than the depth position D2 and is shallower than a boundary surface between the first semiconductor
layer and the second semiconductor layer as D3,

a depth position of the boundary surface between the first semiconductor layer and the second semiconductor layer as D4, and
a depth position in the surface of the first semiconductor layer as D5,
the concentration of the heavy metal at the depth position D4 is higher than the concentration of the heavy metal at the depth
position D3, and wherein

the concentration of the heavy metal at the depth position D2 is higher than the concentration of the heavy metal at the depth
position D3.

US Pat. No. 9,083,241

POWER FACTOR CORRECTION CIRCUIT FOR PROVIDING PROTECTION AGAINST OVERVOLTAGE

SHINDENGEN ELECTRIC MANUF...

6. A power factor correction circuit comprising:
an input diode configured to rectify commercial input power;
a choke coil having one terminal connected to the input diode;
an output diode having an anode terminal connected to the other terminal of the choke coil;
an output capacitor having a positive terminal connected to a cathode terminal of the output diode;
a switching element connected between a contact point and a negative terminal of the output capacitor, the contact point locating
between the anode terminal of the output diode and the other terminal of the choke coil; and

a control circuit configured to control turning on and off of the switching element, wherein
a voltage of the commercial input power is boosted, a direct voltage from the output capacitor is outputted, and electricity
is supplied to a load side, and

the control circuit includes:
an output voltage control circuit configured to perform constant voltage-control so that a capacitor charge voltage of the
output capacitor may be a first voltage value;

an overvoltage detecting unit configured to detect a second voltage value to generate a first overvoltage detection signal,
when the capacitor charge voltage of the output capacitor reaches the second voltage value higher than the first voltage value;

a current limiting unit configured to detect a value of a switching current through the switching element, determine a limiting
value of a level of the switching current, and limit the value of the switching current to the limiting value; and

a limiting value changing unit configured to cause the current limiting unit to change the limiting value to decrease the
level of the switching current based on the first overvoltage detection signal when the overvoltage detecting unit has detected
the second voltage value,

wherein when the overvoltage detecting unit detects that the capacitor charge voltage of the output capacitor is higher than
the second voltage value after the overvoltage detecting unit has detected the second voltage value, the limiting value changing
unit causes the current limiting unit to change the limiting value so as to further decrease the value of the switching current
to be lower than the value of the switching current caused to decrease when the overvoltage detecting unit detects the second
voltage value, and

wherein the current limiting unit is constituted by a comparator having: a negative terminal connected to a reference power
source corresponding to the first voltage value; an output connected to an oscillation control unit configured to control
oscillation of the switching element; and a positive terminal supplied with a signal obtained by superimposing a current level
signal corresponding to the value of the switching current and a limiting value changing signal outputted from the limiting
value changing unit for causing the current limiting unit to change the limiting value.

US Pat. No. 9,601,416

LEAD FRAME, MOLD AND METHOD OF MANUFACTURING LEAD FRAME WITH MOUNTED COMPONENT

Shindengen Electric Manuf...

1. A lead frame comprising:
one metal plate having a plurality of terminals; and
the other metal plate joined to the one metal plate, on which a mounted component is wire bonded to the respective terminal;
wherein:
the one metal plate includes a first connection portion connected to the respective terminal, a first extension portion disposed
on one end of the first connection portion to extend from the first connection portion in a first direction, and a second
extension portion disposed on the other end of the first connection portion to extend from the first connection portion in
a second direction opposite to the first direction;

the other metal plate includes a pair of first clamping portions configured to clamp the first extension portion, and a pair
of second clamping portions configured to clamp the second extension portion;

each portion of the pair of first clamping portions is pressed to be extended by a mold, which is used for sealing the mounted
component with a resin, so that gaps between the first extension portion and the first clamping portions are filled, whereby
the resin is prevented from leaking between the first extension portion and the first clamping portions; and

each portion of the pair of second clamping portions is pressed to be extended by the mold, so that gaps between the second
extension portion and the second clamping portions are filled, whereby the resin is prevented from leaking between the second
extension portion and the second clamping portions.

US Pat. No. 9,300,149

REGULATOR, BATTERY CHARGING APPARATUS AND BATTERY CHARGING METHOD TO PREVENT VOLTAGE OF A BATTERY FROM INCREASING BEYOND A FULL-CHARGE VOLTAGE DURING CHATTERING

Shindengen Electric Manuf...

1. A regulator that controls charging, by an alternating-current generator, of a first battery connected between a first terminal
and a second terminal, the regulator comprising:
a rectifying circuit that rectifies an alternating current output from an output terminal of each phase of the alternating-current
generator and outputs a charging current to the first battery;

a first battery detecting circuit having a first resistor connected to the first terminal at a first end thereof a second
resistor connected between a second end of the first resistor and the second terminal and a first switch element connected
to the second terminal at a first end thereof and to the second end of the first resistor at a control terminal thereof;

a first full-charge detecting circuit having a third resistor connected to the first terminal at a first end thereof, a fourth
resistor connected between a second end of the third resistor and the second terminal, a first capacitor connected to the
second end of the third resistor at a first end thereof and to the second terminal at a second end thereof and a second switch
element connected to the control terminal of the first switch element at a first end thereof, to the second terminal at a
second end thereof and to the first end of the first capacitor at a control terminal thereof;

a first differentiating circuit having a fifth resistor connected between the first terminal and the first end of the first
capacitor and a second capacitor connected in series with the fifth resistor between the first terminal and the first end
of the first capacitor; and

a first driving circuit that controls the rectifying circuit to rectify the alternating-current according to an output of
the alternating-current generator and controls the rectifying circuit to perform or stop an operation to rectify the alternating
current and supply power to the first battery according to a signal at the second end of the first switch element.

US Pat. No. 9,712,072

INVERTER DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An inverter device comprising:
a power converter configured to power-convert an input power into a DC power to generate a voltage of the DC power between
a high voltage node and a low voltage node;

a first switching element connected between an output node and the high voltage node;
a second switching element connected between the output node and the low voltage node;
a first driver circuit having a power supply node to be supplied with an operating voltage based on a voltage at the output
node, and the first driver circuit being configured to drive the first switching element based on the voltage at the output
node;

a second driver circuit having a power supply node to be supplied with an operating voltage based on a voltage at the low
voltage node, and the second driver circuit being configured to drive the second switching element based on the voltage at
the low voltage node;

a third driver circuit having a power supply node to be supplied with an operating voltage based on a voltage at the high
voltage node, and the third driver circuit being configured to drive the power converter based on the voltage at the high
voltage node;

a first rectifier circuit connected between the power supply node of the first driver circuit and the power supply node of
the third driver circuit, and the first rectifier circuit being configured to supply a current from the power supply node
of the first driver circuit toward the power supply node of the third driver circuit;

a second rectifier circuit connected between the power supply node of the second driver circuit and the power supply node
of the third driver circuit, and the second rectifier circuit being configured to supply a current from the power supply node
of the second driver circuit toward the power supply node of the third driver circuit; and

a bootstrap circuit configured to
charge the power supply node of the first driver circuit by a voltage at the power supply node of the second driver circuit
when the voltage at the output node decreases, and

boost a voltage at the power supply node of the first driver circuit in response to an increase in the voltage at the output
node,

wherein the bootstrap circuit comprises:
a diode having an anode connected to the power supply node of the second driver circuit and a cathode connected to the power
supply node of the first driver circuit; and

a capacitor connected between the power supply node and the output node of the second driver circuit.

US Pat. No. 9,160,243

CONTROL CIRCUIT AND INTERLEAVED POWER SUPPLY INCLUDING THAT CONTROL CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. A control circuit for an interleaved power supply, the interleaved power supply comprising: a master converter including
a master switch configured to perform switching operation; and a slave converter including a slave switch configured to perform
switching operation while maintaining a predetermined phase difference with respect to the switching operation of the master
switch, the master converter and the slave converter having a master-slave relationship, the control circuit being configured
to control the switching operation of the slave switch, the control circuit comprising:
a clock generator configured to generate a clock pulse having a predetermined frequency;
a signal doubler configured to generate a master switch on-interval pulse signal indicating information concerning an on-interval
of the master switch based on the clock pulse and a master drive pulse signal that switch-drives the master switch of the
master converter, and generate a doubled duty pulse signal having a duty that is double that of the master switch on-interval
pulse signal;

an edge pulse generator configured to generate a first edge pulse signal based on the master drive pulse signal, and generate
a second edge pulse signal based on the doubled duty pulse signal; and

a slave drive pulse signal generator configured to generate, based on the first edge pulse signal and the second edge pulse
signal, a slave drive pulse signal that switch-drives the slave switch so that an on-interval of the slave switch is identical
to an on-interval of the master switch.

US Pat. No. 9,386,698

MODULE, MODULE COMBINED BODY AND MODULE PRODUCTION METHOD

SHINDENGEN ELECTRIC MANUF...

1. A module comprising:
a first insulating-substrate-side member that has a first insulating substrate, a first conductor layer provided on an upper
side of the first insulating substrate, and a first electronic element provided on an upper side of the first conductor layer;

a second insulating-substrate-side member that has a second insulating substrate, a second conductor layer provided on a lower
side of the second insulating substrate, and a second electronic element provided on a lower side of the second conductor
layer; and

a sealing member that is provided between the first insulating substrate and the second insulating substrate,wherein
the first electronic element and the second electronic element are opposingly disposed, and
the first electronic element and the second electronic element are connected by an element connecting conductor post that
has electric conductivity,

the first electronic element has a first switching element and a first rectifying element,
the second electronic element has a second switching element and a second rectifying element,
the element connecting conductor post has a plurality of element connecting conductor post units,
one of the element connecting conductor post units connects the first switching element and the second rectifying element,
another one of the element connecting conductor post units connects the second switching element and the first rectifying
element,

the first conductor layer has a plurality of first conductor layer units,
the second conductor layer has a plurality of second conductor layer units,
the first switching element is provided on one of the first conductor layer units,
the first rectifying element is provided on another one of the first conductor layer units,
the second switching element is provided on one of the second conductor layer units,
the second rectifying element is provided on another one of the second conductor layer units,
a layer connecting conductor post that has electric conductivity and connects the first conductor layer unit and the second
conductor layer unit is provided,

the layer connecting conductor post has a plurality of layer connecting conductor post units,
one of the layer connecting conductor post units connects the first conductor layer unit on which the first switching element
is provided and the second conductor layer unit on which the second rectifying element is provided, and

another one of the layer connecting conductor post units connects the second conductor layer unit on which the second switching
element is provided and the first conductor layer unit on which the first rectifying element is provided.

US Pat. No. 9,159,549

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising:
a first step of preparing a semiconductor element having a pn junction exposure part where a pn junction is exposed; and
a second step of forming a glass layer such that the glass layer covers the pn junction exposure part in this order, wherein
in the second step:
the glass layer is formed using a glass composition for protecting a semiconductor junction which contains at least SiO2, Al2O3, ZnO, CaO and 3 mol % to 10 mol % of B2O3, and contains none of Pb, P, As, Sb, Li, Na and K, and wherein a content of CaO falls within a range of 15 mol % to 23 mol
%;

a layer made of the glass composition for protecting a semiconductor junction is formed on the pn junction exposure part by
an electrophoresis method; and

the layer made of the glass composition for protecting a semiconductor junction is baked so that the glass layer for passivation
is formed, and

the glass composition for protecting a semiconductor junction is baked at 900° C. or below.

US Pat. No. 9,956,643

PRESSURE APPLYING UNIT

SHINDENGEN ELECTRIC MANUF...

1. A pressure applying unit used in baking a metal particle paste of an assembled body formed by arranging an electronic part on a substrate with the metal particle paste interposed therebetween by heating the assembled body while applying pressure to the assembled body using a pair of heating parts, whereina time during which pressure is not applied to the pressure applying unit is defined as a pressure non-applying time and a time during which predetermined pressure is applied to the pressure applying unit is defined as a pressure applying time,
the pressure applying unit comprises:
a pair of transferring members which is constituted of a plate-like first transferring member being in contact with the substrate at least during the pressure applying time and a plate-like second transferring member being in contact with the electronic part at least during the pressure applying time and transfers pressure and heat to the assembled body by sandwiching the assembled body therebetween in sintering the metal particle paste;
a guide member which connects the pair of transferring members to each other, and allows the movement of at least one transferring member out of the first transferring member and the second transferring member while keeping parallelism of one transferring member with the other transferring member; and
a distance adjusting mechanism for adjusting a distance between the first transferring member and the second transferring member, the distance adjusting mechanism being configured to, in a state where the assembled body is arranged between the pair of transferring members, make the first transferring member or the second transferring member separated from the assembled body during the pressure non-applying time and brings both the first transferring member and the second transferring member into contact with the assembled body during the pressure applying time,
wherein the distance adjusting mechanism includes a resilient member which extends during the pressure non-applying time, and shrinks during the pressure applying time.

US Pat. No. 9,074,529

DRIVE CONTROLLING APPARATUS AND DRIVE CONTROLLING METHOD

Shindengen Electric Manuf...

1. A drive controlling method of controlling driving of a four-stroke engine based on a signal output from a sensor that detects
a change of a rotation angle and a top dead center of the engine, comprising:
driving the engine in a forward direction by applying a reference torque that exceeds a first top dead center between an exhaust
stroke and an intake stroke but does not exceed a second top dead center between a compression stroke and a combustion stroke
to the engine in a forward driving control, and then, after the engine stops rotating, determining whether or not the rotation
angle has passed through the first top dead center as a result of a forward movement of the engine based on whether a reference
position signal that indicates that the rotation angle has passed through the first top dead center is output from the sensor;

when it is determined that the rotation angle has passed through the first top dead center, determining whether or not an
amount of forward movement of the engine driven in the forward direction is equal to or greater than an amount of reverse
movement of the engine driven in a reverse direction based on a result of detection of the rotation angle by the sensor;

when it is determined that the rotation angle has passed through the first top dead center, and the amount of forward movement
is equal to or greater than the amount of reverse movement, determining that a current rotation angle of the engine lies in
the intake stroke or the compression stroke and is positioned at a rotation angle shifted from the first top dead center by
a difference between the amount of forward movement and the amount of reverse movement detected by the sensor;

when it is determined that the rotation angle has passed through the first top dead center, and the amount of forward movement
is not equal to or greater than the amount of reverse movement, determining that the current rotation angle of the engine
lies in the combustion stroke or the exhaust stroke and is positioned at a rotation angle shifted from the first top dead
center by the difference between the amount of forward movement and the amount of reverse movement detected by the sensor;

when it is determined that the rotation angle has not passed through the first top dead center, determining whether or not
the amount of forward movement of the engine driven in the forward direction is equal to or greater than the amount of reverse
movement of the engine driven in the reverse direction based on a result of detection of the rotation angle by the sensor;

when it is determined that the rotation angle has not passed through the first top dead center, and the amount of forward
movement is equal to or greater than the amount of reverse movement, determining that the current rotation angle of the engine
lies in the intake stroke or the compression stroke and is positioned at a rotation angle shifted from a rotation angle shifted
from the first top dead center in the forward direction by a first correction amount by the difference between the amount
of forward movement and the amount of reverse movement detected by the sensor; and

when it is determined that the rotation angle has not passed through the first top dead center, and the amount of forward
movement is not equal to or greater than the amount of reverse movement, determining that the current rotation angle of the
engine is positioned from a rotation angle shifted from the second top dead center in the reverse direction by a second correction
amount by the difference between the amount of forward movement and the amount of reverse movement detected by the sensor,
and

wherein driving the engine comprising:
starting the forward driving control to start applying a torque to the engine from a motor a rotating shaft of which is connected
to a crank shaft of the engine;

measuring a torque application time from the start of application of the torque to the engine;
determining whether or not an rotation number of the engine measured by the sensor has reached a target value;
when it is determined that the rotation number of the engine has not reached the target value, determining whether or not
the torque application time has reached a set time and

when it is determined that the rotation number of the engine has reached the target value or when it is determined that the
torque application time has reached the set time, stopping the forward driving control to stop application of the torque from
the motor to the engine, and

wherein the torque application time is a time period that the torque applies to the engine.

US Pat. No. 9,947,806

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a semiconductor substrate of a first conductivity type;
a first portion of a second conductivity type opposite to the first conductivity type, the first portion being formed on a part of a one main surface side of the semiconductor substrate; and
a second portion with conductivity forming a Schottky junction with the one main surface side of the semiconductor substrate so as to be electrically connected to a part of the first portion,
wherein the first portion comprises a first concentration portion and a second concentration portion which have different impurity concentrations from each other,
the first concentration portion and the second concentration portion are formed on a part of the one main surface of the semiconductor substrate, and a side surface of the first concentration portion is in contact with a side surface of the second concentration portion,
the semiconductor device further comprises:
a third portion formed so as to be electrically connected to a part of the second portion, the third portion being formed so as to be in contact with a side surface and a bottom surface connected thereto of the first portion, and
the third portion is an intrinsic portion greater in electrical resistance value than the first portion.

US Pat. No. 9,796,052

COMPOSITE NANOMETAL PASTE CONTAINING COPPER FILLER AND JOINING METHOD

APPLIED NANOPARTICLE LABO...

1. A copper-filler-containing composite nanometal paste comprising composite nanometal particles in which each particle has
an organic coating layer being an organic matter formed around a metal core, and a copper filler which has no organic coating
layer,
wherein said composite nanometal particles comprise at least a first composite nanometal particle with a first organic coating
layer thereon and a second composite nanometal particle with a second organic coating layer thereon in which the first and
second organic coating layers have different compositions so that pyrolysis temperatures of the first and second organic coating
layers differ from each other, and

wherein, when a mass percent concentration of said organic coating layers in said composite nanometical particles is defined
by a term of mass ratio, a mass ratio W1 of said first organic coating layer in said first composite nanometal particle exists within a range of 2 to 13 mass %, and
a mass ratio W2 of said second organic coating layer in said second composite nanometal particle exists within a range of 5 to 25 mass %,
and

when T1 is a pyrolysis temperature of said first organic coating layer and T2 is a pyrolysis temperature of said second organic coating layer, relationships of T1

US Pat. No. 9,653,539

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a semiconductor substrate of a first conductive type, the semiconductive substrate having a first surface;
a guard rind of a second conductivity type opposite to the first conductivity type, the guard ring having a first portion
and a second portion, the first portion being in the semiconductor substrate and adjacent to the first surface and

the second portion being on the semiconductor substrates, and adjacent to the first surface; and
a metal layer on the semiconductive substrate, the metal layer adjacent to the first surface and forming a Schottky junction
with the semiconductor substrate so as to be electrically connected to the second portion,

wherein the metal layer has a cross-section that is rectangular when viewed in a vertical direction,
a thickness from a bottom surface of the semiconductor substrate to a bottom surface of the metal layer is smaller than a
thickness from the bottom surface of the semiconductor substrate to an uppermost surface of the guard ring,

the first portion of the guard ring includes a first region and a second region connected to the first region, and
the first region is closer to the metal layer than the second region, and
the second region is larger in depth in the vertical direction of the semiconductor substrate than the first region.

US Pat. No. 9,647,525

POWER SUPPLY DEVICE WITH CURRENT LIMIT BASED ON OUTPUT CURRENT AND INPUT VOLTAGE

Shindengen Electric Manuf...

1. A power supply device, comprising:
a first inverter that converts a first direct-current voltage into a first alternating-current voltage based on a switching
operation of a plurality of first switching elements forming a first bridge circuit and outputs the first alternating-current
voltage; and

a second inverter that converts a second direct-current voltage into a second alternating-current voltage synchronized with
the first alternating-current voltage based on a switching operation of a plurality of second switching elements forming a
second bridge circuit and outputs the second alternating-current voltage,

wherein the first inverter has:
a first limiter value setting part that sets a first limiter value;
a first peak limiter circuit that inhibits the first switching elements from performing the switching operation when a value
that is responsive to an output current reaches the first limiter value, and makes the first switching elements perform the
switching operation when the value that is responsive to the output current is lower than the first limiter value; and

a first controlling part that increases the first limiter value based on an increase of the value that is responsive to the
output current and the first direct-current voltage, and

the second inverter has:
a second limiter value setting part that sets a second limiter value;
a second peak limiter circuit that inhibits the second switching elements from performing the switching operation when the
value that is responsive to the output current reaches the second limiter value, and makes the second switching elements perform
the switching operation when the value that is responsive to the output current is lower than the second limiter value; and

a second controlling part that increases the second limiter value based on an increase of the value that is responsive to
the output current and the second direct-current voltage.

US Pat. No. 10,090,218

PLACEMENT BASE FOR SEMICONDUCTOR DEVICE AND VEHICLE EQUIPMENT

Shindengen Electric Manuf...

1. A placement base of a semiconductor device comprising:a body, to which a radiation agent having viscosity is applied and on which the semiconductor device is disposed; and
a protrusion, which is placed in an outer periphery of the body and on which the semiconductor device is not disposed,
wherein a detective groove for introducing the radiation agent is provided on a surface of the protrusion,
wherein a surface of the body is provided with a body-side groove in such a manner that a central part of the body is intermittently or continuously surrounded by the body-side groove, and
wherein a part of the body-side groove and a part of the detective groove is communicated with each other, and the part of the body-side groove and the part of the detective groove are not parallel with each other.

US Pat. No. 9,196,722

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a cell region which is defined on a semiconductor substrate on which a low resistance semiconductor layer of a first-conductive
type or a second-conductive type and a drift layer of a first-conductive type are laminated; and

a peripheral region which includes a gate finger forming region which surrounds the cell region, and a gate pad forming region
which projects into the cell region, wherein

the semiconductor device further comprises, in the cell region:
the low resistance semiconductor layer;
the drift layer of a first-conductive type which is formed over the low resistance semiconductor layer;
a base region of a second-conductive type which is formed over a surface of the drift layer;
a high-concentration semiconductor region of a first-conductive type which is formed within the base region; and
a gate electrode layer which is made of polysilicon containing an impurity at a predetermined concentration,
the semiconductor device further comprises in the peripheral region:
the low resistance semiconductor layer;
the drift layer which is formed over the low resistance semiconductor layer;
a gate lead line which is made of polysilicon, and is formed in the gate finger forming region and the gate pad forming region
over the drift layer by way of a field oxide film;

a gate finger which is made of metal, and is formed over the gate lead line in the gate finger forming region; and
a gate pad which is made of metal, is formed over the gate lead line in the gate pad forming region, and is connected to the
gate finger,

the gate electrode layer and the gate lead line are electrically connected with each other by way of a resistor made of polysilicon
containing an impurity,

an impurity concentration in polysilicon which forms the resistor is lower than an impurity concentration in polysilicon which
forms the gate electrode layer, and

a width of the resistor is equal to a width of the gate electrode layer.

US Pat. No. 9,873,218

METHOD OF MANUFACTURING RESIN SEALING MODULE, AND RESIN SEALING MODULE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a resin sealing module in which a substrate with electronic components including a substrate
and electronic components mounted on a mounting surface of the substrate is sealed by a resin, the method of manufacturing
the resin sealing module comprising:
mounting electronic components on a first region that is a part of the mounting surface to obtain the substrate with electronic
components;

housing the substrate with electronic components in a module case;
injecting an uncured curable liquid resin into the module case to fill up the module case with the uncured curable liquid
resin covering the substrate with electronic components;

positioning a mold member including a main plate portion and a first partition wall protruding from a first main surface of
the main plate portion and surrounding a first predetermined region of the first main surface, so that inside space of the
first partition wall faces a second region of the mounting surface, the second region being different from the first region;

curing the curable liquid resin in the module case; and
removing the mold member from the cured resin,
wherein positioning the mold member is performed so that at least a protruding end portion of the first partition wall is
immersed into the curable liquid resin while a gas layer is held in the inside space, and thereby a partial region of an upper
surface of the curable liquid resin is depressed by the gas layer, so that the partial region is positioned lower in level
than other regions.

US Pat. No. 9,960,228

WIDE GAP SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. A wide gap semiconductor device comprising:a first conductive-type semiconductor layer;
a second conductive-type region that is provided on the first conductive-type semiconductor layer;
a first electrode, of which a part is disposed on the second conductive-type region and the other part is disposed on the first conductive-type semiconductor layer;
an insulating layer that is provided adjacent to the first electrode on the first conductive-type semiconductor layer and that extends to an end part of the wide gap semiconductor device; and
a second electrode that is provided between the first electrode and the end part of the wide gap semiconductor device and that forms a schottky junction with the first conductive-type semiconductor layer,
wherein a distance between an end part of the second conductive-type region and an end part of a contact surface between the second electrode and the first conductive-type semiconductor layer is larger than a theoretical width of a depletion layer,
wherein the theoretical width of the depletion layer is calculated based on a following formula (1)
in the formula (1), ?s shows a dielectric constant of the first conductive-type semiconductor layer, Vbi shows a built-in potential, and Nd shows a donor concentration in the first conductive-type semiconductor layer.

US Pat. No. 9,673,143

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Shindengen Electric Manuf...

1. A semiconductor device that converts DC power to AC power, the semiconductor device comprising:
an insulating substrate;
a first conductive part provided on the insulating substrate so as to extend in a first direction;
a second conductive part provided on the insulating substrate so as to be separated from the first conductive part in a second
direction different from the first direction and to extend in the first direction;

a plurality of third conductive parts provided on the insulating substrate so as to be lined along the first direction between
the first conductive part and the second conductive part;

a plurality of first switches mounted on the first conductive part along the first direction, and each provided with a first
main electrode, a second main electrode and a control electrode, the first main electrode being electrically connected to
the first conductive part;

a plurality of second switches each mounted on the corresponding third conductive part, and each provided with a third main
electrode, a fourth main electrode and a control electrode, the third main electrode being electrically connected to the second
main electrode of the first switch, the fourth main electrode being electrically connected to the second conductive part;

a plurality of signal terminals arrayed along the first direction so that the first conductive part is positioned between
the signal terminals and the third conductive parts;

a power supply terminal electrically connected to the first conductive part, and arranged on one end side of the insulating
substrate where the plurality of signal terminals are provided;

a ground terminal electrically connected to the second conductive part, and arranged on the one end side of the insulating
substrate; and

a plurality of output terminals each electrically connected to the corresponding third conductive part, arrayed along the
first direction on the other end side which is an opposite side of the one end side of the insulating substrate, and provided
over a straight line that passes through the second conductive part and extends in the first direction.

US Pat. No. 9,735,691

POWER SUPPLY DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power supply device comprising:
a switching element configured to perform synchronous rectification on a power to be induced in a first secondary wiring of
a transformer configured to perform voltage conversion;

a first current detection circuit configured to detect a value of a current to be induced in a second secondary wiring of
the transformer;

a second current detection circuit configured to detect a change in the current to be induced in the second secondary wiring,
the second current detection circuit having a higher response speed with respect to conversion of the current than that of
the first current detection circuit; and

a control unit configured to
determine based on the change in the current detected by the second current detection circuit whether or not backflow is occurring,
and

control the switching element in accordance with a result of the determination, wherein
the second current detection circuit is configured to detect a minimum value of values of the current, and
the control unit is configured to, in a first case that the minimum value is detected by the second current detection circuit,
determine that backflow is occurring.

US Pat. No. 9,231,420

CELL BALANCE CIRCUIT AND CELL BALANCE DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A cell balance apparatus configured to equalize respective charge voltages of a first rechargeable battery, a second rechargeable
battery and a third rechargeable battery, the cell balance circuit comprising:
a first cell balance circuit configured to equalize respective charge voltages of the first rechargeable battery and the second
rechargeable battery; and

a second cell balance circuit configured to equalize respective charge voltages of the second rechargeable battery and the
third rechargeable battery;

the first cell balance circuit comprising:
a first transformer comprising a primary winding arranged so as to form a set with the first rechargeable battery and a secondary
winding arranged so as to form a set with the second rechargeable battery; and

a first switching unit configured to control a state of whether or not a charge voltage of the first rechargeable battery
is applied to the primary winding,

wherein the first switching unit comprises a first switch, a second switch, a third switch, and a fourth switch, and the switching
unit is configured as a non-resonant circuit,

and wherein a second terminal of the primary winding and a first terminal of the secondary winding are each connected to a
second terminal of the first rechargeable battery, and are each connected to a first terminal of the second rechargeable battery,

and wherein the primary winding is arranged such that a first terminal thereof can be connected to a first terminal of the
first rechargeable battery via the first switch, and such that the first terminal thereof can be connected to a second terminal
of the second rechargeable battery via the second switch,

and wherein the secondary winding is arranged such that a second terminal thereof can be connected to the first terminal of
the first rechargeable battery via the third switch, and such that the second terminal thereof can be connected to the second
terminal of the second rechargeable battery via the fourth switch,

and wherein the first switching unit alternately switches on and off the first switch together with the fourth switch and
the second switch together with the third switch when the first and second rechargeable batteries are charged or otherwise
discharged;

the second cell balance circuit comprising:
a second transformer comprising a third winding arranged so as to form a set with the second rechargeable battery and a fourth
winding arranged so as to form a set with the third rechargeable battery; and

a second switching unit configured to control a state of whether or not a charge voltage of the second rechargeable battery
is applied to the third winding,

wherein the second switching unit comprises a fifth switch, a sixth switch, a seventh switch, and an eighth switch, and the
switching unit is configured as a non-resonant circuit,

and wherein a second terminal of the third winding and a first terminal of the fourth winding are each connected to the second
terminal of the second rechargeable battery, and are each connected to a first terminal of the third rechargeable battery,

and wherein the third winding is arranged such that a first terminal thereof can be connected to the first terminal of the
second rechargeable battery via the fifth switch, and such that the first terminal thereof can be connected to a second terminal
of the third rechargeable battery via the sixth switch,

and wherein the fourth winding is arranged such that a second terminal thereof can be connected to the first terminal of the
second rechargeable battery via the seventh switch, and such that the second terminal thereof can be connected to the second
terminal of the third rechargeable battery via the eighth switch, and wherein,

the second switching unit alternately switches on and off the fifth switch together with the eighth switch and the sixth switch
together with the seventh switch when the second and third rechargeable batteries are charged or otherwise discharged.

US Pat. No. 9,570,408

RESIN-SEALED SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING RESIN-SEALED SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A resin-sealed semiconductor device comprising:
a mesa-type semiconductor element which includes a mesa-type semiconductor base body having a pn-junction exposure portion
in an outer peripheral tapered region which surrounds a mesa region, and a glass layer which covers at least the outer peripheral
tapered region; and

a molding resin which seals the mesa-type semiconductor element,
wherein
the mesa-type semiconductor element includes, as the glass layer, a glass layer which is formed by baking a glass composition
for protecting a semiconductor junction which is made of fine glass particles prepared from a material in a molten state,

the glass layer is formed using a glass composition which substantially contains none of Pb, P, As, Sb, Li, Na and K,
the glass composition contains at least SiO2, Al2O3, an oxide of alkaline earth metal, and

the glass composition can be baked at 1100° C. or below, and
(i) the content of SiO2 falls within a range of 53 mol % to 73 mol %,

the content of Al2O3 falls within a range of 11 mol % to 21 mol %,

a content of CaO falls within a range of 3 mol % to 9 mol %,
a content of MgO falls within a range of 11 mol % to 21 mol %,
the content of nickel oxide falls within a range of 0.01 mol % to 3 mol %, or,
(ii) the content of SiO2 falls within a range of 32 mol % to 48 mol %,

the content of Al2O3 falls within a range of 9 mol % to 13 mol %,

the content of CaO falls within a range of 15 mol % to 23 mol %,
a content of ZnO falls within a range of 18 mol % to 28 mol %,
a content of B2O3 falls within a range of 3 mol % to 10 mol %,

the content of nickel oxide falls within a range of 0.01 mol % to 3 mol %.

US Pat. No. 9,871,369

LOAD DRIVER CIRCUIT AND LOAD SHORT-CIRCUIT DETECTION CIRCUIT

SHINDENGEN ELECTRIC MANUF...

15. A load short-circuit detection circuit that detects a short-circuit state of a load, comprising:
a first terminal to which the load is connected at one end thereof;
a second terminal to which a battery is connected at a negative electrode thereof, the battery being connected to another
end of the load at a positive electrode thereof;

a load switch element that has a current path connected to the first terminal at one end thereof and to the second terminal
at another end thereof, the load switch element being turned on to supply a current from the battery to the load to drive
the load and turned off to interrupt the supply of the current to the load to stop the operation of the load;

a detection circuit comprising a first switch element connected to the first terminal at one end thereof, a detection capacitor
connected to another end of the first switch element at one end thereof and to a first node at another end thereof, a detection
resistor connected to the first node at one end thereof and to the second terminal at another end thereof, and a discharge
resistor connected in parallel with the detection resistor and the detection capacitor between the another end of the first
switch element and the second terminal, the discharge resistor being connected to the another end of the first switch element
at one end thereof and to the second terminal at another end thereof, the detection circuit periodically detecting an inrush
current that flows to the detection capacitor from the first terminal through the first switch element and outputting a detection
signal responsive to a result of the detection at the first node;

a peak hold circuit that holds a peak voltage of the detection signal and outputs the held peak voltage as a detection voltage;
and

a comparison circuit that compares the detection voltage with a threshold voltage and outputs a comparison result signal responsive
to a result of the comparison.

US Pat. No. 10,037,903

BONDING DEVICE, BONDING METHOD AND PRESSURE APPLYING UNIT

SHINDENGEN ELECTRIC MANUF...

1. A bonding device for bonding a substrate and an electronic part of an assembled body which is formed by mounting the electronic part on the substrate with a metal particle paste sandwiched therebetween, the bonding device being configured to bond the substrate and the electronic part to each other by heating a pressure applying unit having a first transfer member and a second transfer member which transfer pressure and heat to the assembled body in a state where the assembled body is sandwiched between the first transfer member and the second transfer member while applying pressure to the pressure applying unit, whereinthe bonding device further comprises:
a heating mechanism part having a first heating part and a second heating part arranged at positions opposite to each other;
a positioning mechanism part for positioning the pressure applying unit at a position where the pressure applying unit is in contact with neither the first heating part nor the second heating part in a space defined between the first heating part and the second heating part; and
a pressure applying mechanism part for applying pressure to the pressure applying unit by moving at least one of the first heating part and the second heating part in a direction from one of the first heating part and the second heating part toward the other of the first heating part and the second heating part, wherein
the first transfer member includes: a plateau portion projecting toward the outside at a center portion of a surface of the first transfer member on a side opposite to a surface of the first transfer member which faces the second transfer member in an opposed manner; and a shoulder portion formed around the plateau portion; and
the positioning mechanism part includes:
a tray having a bottom surface in which an opening portion which allows the insertion of the plateau portion therein at the time of accommodating the pressure applying unit in the tray is formed and on which a support portion for supporting the shoulder portion at the time of accommodating the pressure applying unit in the tray is formed around the opening portion; and
a positioning part capable of positioning the pressure applying unit at a position where the pressure applying unit is in contact with neither the first heating part nor the second heating part by positioning the tray in which the pressure applying unit is accommodated,
the first heating part is positioned below the second heating part, and
the pressure applying mechanism part is configured to apply pressure to the pressure applying unit by moving the first heating part upward, and
the pressure applying mechanism part is configured to move the pressure applying unit and the tray in a vertical direction by moving the first heating part in a vertical direction,
the first heating part is arranged on a first transfer member side of the pressure applying unit, and the second heating part is arranged on a second transfer member side of the pressure applying unit,
the support portion is brought into a state where the support portion supports the shoulder portion when the first transfer member is not in contact with the first heating part, and is brought into a state where the support portion is disposed away from the shoulder portion when the first transfer member is in contact with the first heating part, and
the bottom surface of the tray is in contact with the first heating part in a state of the plateau portion being inserted into the opening portion when the pressure applying unit and the tray are moved in a vertical direction by moving the first heating part in a vertical direction.

US Pat. No. 9,682,650

DIRECTION INDICATOR SYSTEM AND DIRECTION INDICATOR DEVICE FOR A VEHICLE

Shindengen Electric Manuf...

1. A direction indicator system comprising:
an ignition switch that has a first terminal and a second terminal, and is capable of switching between an ON state where
the first terminal and the second terminal are electrically connected with each other and an OFF state where the first terminal
and the second terminal are electrically disconnected from each other;

a hazard switch that has a third terminal, a fourth terminal, and a fifth terminal, and is capable of switching between an
ON state where the third terminal, the fourth terminal, and the fifth terminal are electrically connected with each other
and an OFF state where the third terminal, the fourth terminal, and the fifth terminal are electrically disconnected from
each other;

a direction indicator switch that has a sixth terminal, a seventh terminal, and an eighth terminal, and is capable of switching
between a state where the sixth terminal and the eighth terminal are electrically connected with each other, a state where
the seventh terminal and the eighth terminal are electrically connected with each other, and a state where the sixth terminal,
the seventh terminal, and the eighth terminal are electrically disconnected from each other;

a first direction indicator lamp that has one end connected with the sixth terminal of the direction indicator switch and
another end connected with a ground, the first direction indicator lamp being lighted when a current flows therein;

a second direction indicator lamp that has one end connected with the seventh terminal of the direction indicator switch and
another end connected with the ground, the second direction indicator lamp being lighted when a current flows therein; and

a direction indicator device that has a first battery connection terminal connected with a positive electrode of a battery,
a second battery connection terminal connected via the ignition switch with the positive electrode of the battery, a first
direction indicator lamp connection terminal connected with the third terminal of the hazard switch and one end of the first
direction indicator lamp, a second direction indicator lamp connection terminal connected with the fourth terminal of the
hazard switch and one end of the second direction indicator lamp, and a drive current output terminal connected with the eighth
terminal of the direction indicator switch and the fifth terminal of the hazard switch,

wherein the direction indicator device detects that the hazard switch is in the ON state via the first and second direction
indicator lamp connection terminals, performs a hazard operation to blink both the first and second direction indicator lamps
by a drive current output from the drive current output terminal with a blinking period in a case where the ignition switch
is in the ON state when the hazard switch is put into the ON state, and operates with a voltage supplied from the first battery
connection terminal to output the drive current when the ignition switch is put into the OFF state during the hazard operation.

US Pat. No. 9,291,111

ENGINE CONTROL UNIT, ENGINE CONTROL SYSTEM AND ENGINE CONTROL METHOD

Shindengen Electric Manuf...

1. An engine control method of controlling driving of an engine, comprising:
a first step of determining whether or not an engine speed of the engine is lower than a preset, prescribed engine speed;
a second step of determining whether or not a crank angle of the engine lies in a first section between a top dead center
in a compression stroke and a first angle in a case where the engine speed of the engine is lower than the prescribed engine
speed;

a third step of running the engine in a forward direction by driving a motor that applies a torque to a crank of the engine
in the forward direction in a case where the crank angle of the engine does not lie in the first section;

a fourth step of determining whether or not the crank angle of the engine lies in the first section, after the third step;
a fifth step of removing any load from the motor in a case where it is determined in the fourth step that the crank angle
of the engine lies in the first section;

a sixth step of determining whether or not the crank angle of the engine lies in a second section between a top dead center
and a second angle in a combustion stroke, after the fifth step;

a seventh step of braking the motor in a case where it is determined in the sixth step that the crank angle of the engine
lies in the second section;

an eighth step of determining whether or not there is a request for restart of the engine, after the seventh step; and
a ninth step of running the engine in the forward direction by driving the motor in the forward direction in a case where
it is determined in the eighth step that there is the request for restart of the engine.

US Pat. No. 9,863,818

TEMPERATURE DETECTING APPARATUS AND COMPUTER PROGRAM THEREFOR

SHINDENGEN ELECTRIC MANUF...

1. A temperature detecting apparatus that detects a temperature of a detection target having a switch element, comprising:
a current detecting unit that detects an output current from the detection target changing depending on an on/off operation
of the switch element;

a temperature estimating unit that obtains a conduction loss of the switch element and a switching loss of the switch element
on the basis of a current value detected by the current detecting unit and estimates the temperature of the detection target
on the basis of the obtained conduction loss and the obtained switching loss; and

a temperature detecting unit that detects the temperature of the detection target by detecting its own temperature,
wherein the temperature estimating unit,
when the current value detected by the current detecting unit is smaller than a predetermined threshold value, defines a detection
result obtained by the temperature detecting unit as the temperature of the detection target and,

when the current value detected by the current detecting unit is greater than or equal to the predetermined threshold value,
defines an estimation result obtained by the temperature estimating unit as the temperature of the detection target.

US Pat. No. 9,831,316

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a wide gap semiconductor substrate;
an element portion formed on the wide gap semiconductor substrate, the element portion comprising: a low resistance semiconductor
layer of a first conductive type; a drift layer of a first conductive type having a lower density of impurity than the low
resistance semiconductor layer; a body layer of a second conductive type opposite to the first conductive type, the body layer
positioned over the drift layer; a gate trench formed so as to open in the body layer and to reach the drift layer; a source
region of the first conductive type formed in a state where the source region is arranged in the inside of the body layer
and at least a portion of the source region is exposed on an inner peripheral surface of the gate trench; a gate insulation
layer formed on the inner peripheral surface of the gate trench; a gate electrode layer formed inside the gate trench by way
of the gate insulation layer; and a source electrode layer formed in a state where the source electrode layer is insulated
from the gate electrode layer and is brought into contact with the source region; and

a gate pad portion formed on the wide gap semiconductor substrate, the gate pad portion comprising: a low resistance semiconductor
layer of a first conductive type; a drift layer of the first conductive type having a lower density of impurity than the low
resistance semiconductor layer; a second-conductive-type semiconductor layer of the second conductive type positioned on the
drift layer; an insulation layer formed on the second-conductive-type semiconductor layer; and a gate line formed on the insulation
layer, wherein

the element portion further includes a first trench structure which has: a plurality of first protective trenches where the
first protective trenches open in the body layer in a region between the gate trenches formed adjacently to each other and
are formed deeper than the gate trenches and shallower than the low resistance semiconductor layer; and a first buried layer
formed inside the respective first protective trenches, and

the gate pad portion further includes a second trench structure which has: a plurality of second protective trenches where
the second protective trenches open in the second-conductive-type semiconductor layer and are formed deeper than the gate
trenches and shallower than the low resistance semiconductor layer; and a second buried layer formed inside the respective
second protective trenches,

the first trench structure is either one of a structure where the first trench structure further includes a first semiconductor
region of the second conductive type formed on at least a bottom portion of the first protective trench and a first buried
layer which is made of a conductor as the first buried layer, and the first buried layer is connected with the drift layer
through the first semiconductor region or a structure where the first trench structure includes a first buried layer which
is formed of a metal layer forming a Schottky contact with the drift layer on a bottom portion and a side portion of the first
protective trench as the first buried layer and the first buried layer forms the drift layer and the Schottky contact,

the second trench structure is either one of a structure where the second trench structure further includes a second semiconductor
region of the second conductive type formed on at least a bottom portion of the second protective trench and a second buried
layer which is made of a conductor as the second buried layer, and the second buried layer is connected with the drift layer
through the second semiconductor region or a structure where the second trench structure includes a second buried layer which
is formed of a metal layer forming a Schottky contact with the drift layer on a bottom portion and a side portion of the second
protective trench as the second buried layer and the second buried layer forms the drift layer and the Schottky contact, and

the first buried layer and the second buried layer are electrically connected with the source electrode layer.

US Pat. No. 9,831,337

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a semiconductor base body having a drain region of a first conductive type, a drift region of the first conductive type disposed
adjacently to the drain region, a base region of a second conductive type disposed adjacently to the drift region, and a source
region of the first conductive type disposed adjacently to the base region, and having a trench in the inside of there, the
trench having a bottom disposed adjacently to the drift region and a side wall disposed adjacently to the base region and
the drift region, the trench being formed into a stripe pattern as viewed in a plan view;

a gate electrode disposed in the inside of the trench and opposedly facing the base region with a gate insulating film interposed
therebetween on a portion of the side wall;

a shield electrode disposed in the inside of the trench and positioned between the gate electrode and the bottom of the trench;
an electric insulating region disposed in the inside of the trench, the electric insulating region expanding between the gate
electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate
the shield electrode from the side wall and the bottom;

a source electrode formed above the semiconductor base body and electrically connected to the source region and the shield
electrode; and

a drain electrode formed adjacently to the drain region, wherein
the shield electrode has high resistance regions formed at positions where the high resistance regions opposedly face the
side walls, and a low resistance region formed at a position where the low resistance region is sandwiched between the high
resistance regions.

US Pat. No. 9,823,278

FAULT DETECTING APPARATUS AND COMPUTER PROGRAM THEREFOR

SHINDENGEN ELECTRIC MANUF...

1. A drive apparatus, comprising:
a switch element, which changes current to be applied to a load;
a current detecting circuit, which is connected to the switch element, detects the current to be applied to the load, and
outputs a current detection signal; and

a control unit, which is connected to the switch element and the current detecting circuit, and receives the current detection
signal from the current detecting circuit, including:

a switching control unit, which supplies a control signal to the switch element to on/off-control the switch element;
a comparing unit, which compares a duty ratio of the control signal supplied from the switching control unit to the switch
element with a theoretical value of the duty ratio of the control signal, wherein a value of the duty ratio of the control
signal needed for supplying a current value detected by the current detecting circuit, is defined as the theoretical value
of the duty ratio of the control signal; and

a fault detecting unit, which detects a failure of the current detecting circuit on the basis of a comparison result obtained
by the comparing unit, whereby the failure of the current detecting circuit can be detected without using another current
detecting circuit so that the drive apparatus can be miniaturized.

US Pat. No. 9,941,112

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a semiconductor element which includes a pn junction exposure portion where a pn junction is exposed;
a single-layered oxide film over the semiconductor element, the single-layered oxide film having a first portion covering the pn junction exposure portion; and
a glass layer covering the first portion of the single-layered oxide film, the glass layer being separated by the single-layered oxide film from the semiconductor element, the glass layer being not in contact with the semiconductor element, the glass layer being in contact with the single-layered oxide film, and the glass layer being formed by forming, over the first portion of the single-layered oxide film, a layer made of a glass composition for protecting a semiconductor junction, and baking the layer made of the glass composition, wherein
the glass composition is made of fine glass particles prepared from a material in a molten state which is obtained by melting a raw material which contains at least SiO2, Al2O3, B2O3, ZnO, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, and
the glass composition contains none of components which constitute the raw material in the form of a filler.

US Pat. No. 10,251,256

HEAT DISSIPATING STRUCTURE

Shindengen Electric Manuf...

1. A heat dissipating structure, comprising:a heat sink having a base portion and at least one heat dissipating fin, the base portion having first and second surfaces opposing each other, the at least one heat dissipating fin extending perpendicularly from the first surface, each of the at least one heat dissipating fin having a first insertion groove, and first and second fin portions separated by the first insertion groove, and the first insertion groove extending from an end portion thereof toward the base portion;
a first heat generating component inserted into the first insertion groove, the first heat generating component being in contact with at least one fin portion of the first and second fin portions;
a circuit board on the second surface of the base portion and electrically connected to the first heat generating component;
a second heat generating component on the circuit board, the second heat generating component generating a smaller amount of heat than the first heat generating component; and
a connector in the base portion, the connector being over the first insertion groove in plan view, and the connector electrically connecting the first heat generating component and the second heat generating component, wherein
the base portion has a second insertion groove and a through-hole over the first insertion groove in plan view, the connector being insertable from the second surface into the second insertion groove, and the through-hole connecting the first insertion groove and the second insertion groove,
the connector has a first surface facing the first heat generating component and a second surface facing the second heat generating component,
the first surface of the connector has a first insertion outlet into which a first connecting terminal that electrically connects the first heat generating component to the connector is insertable, and
the second surface of the connector has a second insertion outlet into which a second connecting terminal that electrically connects the second heat generating component to the connector is insertable, and
the connector has a protruding portion protruding in an extending direction of the first and second fin portions and fitted into the through-hole.

US Pat. No. 10,276,466

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MOUNTING METHOD

Shindengen Electric Manuf...

1. A semiconductor device comprising:a substrate that is annular or partially annular, the substrate having an inner circumferential portion formed arcuate in plan view and an outer circumferential portion formed arcuate in plan view;
a circuit unit provided on the substrate, the circuit unit being configured to individually control a plurality of phases of a motor; and
a sealing resin that is annular or partially annular, the sealing resin surrounding the substrate, wherein
the substrate has a first main surface and a second main surface which oppose each other,
the motor is attachable onto, and detachable from, the first main surface of the substrate,
the circuit unit is on the first main surface of the substrate and contacts the motor in a state where the motor is attached on the first main surface of the substrate, and
the circuit unit is exposed to an outside of the sealing resin in a state where the sealing resin seals the substrate.

US Pat. No. 9,831,335

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:
a semiconductor base body having a drain region of a first conductive type, a drift region of the first conductive type disposed
adjacently to the drain region, a base region of a second conductive type disposed adjacently to the drift region, and a source
region of the first conductive type disposed adjacently to the base region, and having a trench in the inside of there, the
trench having a bottom disposed adjacently to the drift region and a side wall disposed adjacently to the base region and
the drift region, the trench being formed into a stripe pattern as viewed in a plan view;

a gate electrode disposed in the inside of the trench and opposedly facing the base region with a gate insulating film interposed
therebetween on a portion of the side wall;

a shield electrode disposed in the inside of the trench and positioned between the gate electrode and the bottom of the trench;
an electric insulating region disposed in the inside of the trench, the electric insulating region expanding between the gate
electrode and the shield electrode, and further expanding along the side wall and the bottom of the trench so as to separate
the shield electrode from the side wall and the bottom;

a source electrode formed above the semiconductor base body and electrically connected to the source region and the shield
electrode; and

a drain electrode formed adjacently to the drain region, wherein
the shield electrode has a high resistance region positioned on a drain region side, and a low resistance region positioned
on a gate electrode side.

US Pat. No. 9,698,697

POWER SUPPLY DEVICE, AND METHOD OF CONTROLLING POWER SUPPLY DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power supply device comprising:
a storage storing a first drooping characteristic of a rated output current value, and a second drooping characteristic of
an allowable current value that is greater than the rated output current value;

an output current detector configured to detect a load current value;
a controller configured to select a drooping characteristic stored in the storage in accordance with the load current value
detected by the output current detector and a mask condition; and

a transformer including a first coil and a second coil and configured to perform conversion of a voltage,
wherein the first coil is connected to a switching element,
the second coil is connected to a rectifier element and an output choke coil,
the output choke coil has a magnetic bias gap,
the rated output current value is a rated output current value of the output choke coil, and
the allowable current value is a current value enlarged from the rated output current value by the magnetic bias gap.

US Pat. No. 10,186,425

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RESIST GLASS

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising an oxide film removing step where an oxide film formed on a surface of a semiconductor substrate is partially removed, whereinthe oxide film removing step comprises:
a first step where a resist glass layer is selectively formed on an upper surface of the oxide film without using an exposure step;
a second step where the resist glass layer is densified by baking the resist glass layer; and
a third step where the oxide film is partially removed using the resist glass layer as a mask, wherein
the resist glass layer contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metals selected from a group consisting of CaO, MgO and BaO, and substantially contains none of Pb, As, Sb, Li, Na and K, and
the content of SiO2 falls within a range of from 50 mol % to 65 mol %,
the content of B2O3 falls within a range of from 8 mol % to 18 mol %,
the content of Al2O3 falls within a range of from 4 mol % to 15 mol %,
the content of ZnO falls within a range of from 4 mol % to 14 mol %, and
the content of the oxide of the alkaline earth metal falls within a range of from 6 mol % to 16 mol %, wherein
in the first step, the resist glass layer which does not substantially contain Pb is formed on a partial region of an upper surface of the oxide film,
in the third step, the oxide film is removed by an etchant containing a hydrofluoric acid using the resist glass as a mask, and
no additional layer is formed on top of the resist glass layer in the oxide film removing step,
the method further comprises an electrode forming step where an electrode is formed in the region where the oxide film is removed in the third step after the oxide film removing step but does not include a step of removing the resist glass layer after the oxide film removing step.

US Pat. No. 9,716,168

SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF DESIGNING SILICON CARBIDE SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer of a first conductivity type;
a silicon carbide layer of a second conductivity type formed on the silicon carbide layer of the first conductivity type;
a gate trench formed to extend from a surface of the silicon carbide layer of the second conductivity type to such a depth
that the gate trench reaches the silicon carbide layer of the first conductivity type;

a gate electrode provided in the gate trench with an insulating film interposed therebetween;
first and second protection trenches formed to extend from the surface of the silicon carbide layer of the second conductivity
type to a depth greater than the gate trench; and

a conductive member provided in the first and second protection trenches,
wherein a cell region in a horizontal extent that includes both the gate trench and the first protection trench that surrounds
the gate trench with at least a part of the gate trench left unenclosed in the horizontal extent, and

a gate region in the horizontal extent that includes the second protection trench and in which a gate pad or a lead electrode
connected to the gate pad is disposed,

the first protection trench included in the cell region has a plurality of cell-region linear trench sections that extend
straight in the horizontal extent, and

a horizontal distance between opposed cell-region linear trench sections is greater than a maximum horizontal distance between
opposed sections of the second protection trench included in the gate region.

US Pat. No. 9,704,828

SEMICONDUCTOR MODULE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor module comprising:
a first circuit board having thermal conductivity and having a first surface;
a second circuit board having thermal conductivity and having a second surface opposing the first surface of the first circuit
board;

a first semiconductor element mounted on the first surface of the first circuit board;
a second semiconductor element mounted on the second surface of the second circuit board; and
a connector having thermal conductivity and electrically connecting the first semiconductor element and the second semiconductor
element,

wherein the connector includes
a first element joining portion connecting the first semiconductor element and the second surface of the second circuit board
while not being in contact with the first surface of the first circuit board and the second semiconductor element, and

a second element joining portion connecting the second semiconductor element and the first surface of the first circuit board
while not being in contact with the second surface of the second circuit board and the first semiconductor element, the second
element joining portion being connected to the first element joining portion.

US Pat. No. 10,186,354

MOUNTING STRUCTURE FOR MOUNTING SHUNT RESISTOR AND METHOD OF MANUFACTURING MOUNTING STRUCTURE FOR MOUNTING SHUNT RESISTOR

SHINDENGEN ELECTRIC MANUF...

1. A mounting structure for mounting a shunt resistor comprising:a printed circuit board where a first conductive pattern and a second conductive pattern are formed on at least one surface of a substrate in a spaced-apart manner from each other; and
a shunt resistor mounted on one surface of the printed circuit board with a bonding material made of a conductive material interposed therebetween, wherein the shunt resistor includes: a bridging portion spaced apart from the substrate; a first connecting portion continuously formed with one end of the bridging portion and electrically connected with the first conductive pattern with the bonding material interposed therebetween, and
a second connecting portion continuously formed with the other end of the bridging portion and electrically connected with the second conductive pattern with the bonding material interposed therebetween,
assuming an axis parallel to a predetermined direction extending from said one end to said the other end of the bridging portion as an x axis, a plane parallel to said one surface of the substrate as an xy plane, and an axis perpendicular to the x axis as a y axis, an axis parallel to a direction extending to said one surface of the substrate from the other surface of the substrate as a z axis, as viewed in a plan view of the xy plane,
the first conductive pattern includes:
a first lead-out portion led out in a +x direction from a first land region which is overlapped with the first connecting portion; and a first pull-out portion pulled out to the outside of a region of the bridging portion from a distal end portion of the first lead-out portion, the distal end portion of the first lead-out portion is a portion therein a side of the first lead-out portion farthest in the +x direction, and
the second conductive pattern includes:
a second lead-out portion led out in a ?x direction from a second land region which is overlapped with the second connecting portion and spaced apart from the first lead-out portion; and a second pull-out portion pulled out to the outside of the region of the bridging portion from a distal end portion of the second lead-out portion, the distal end portion of the second lead-out portion is a portion therein a side of the second lead-out portion farthest in the ?x direction, and
and a resistance value of the shunt resistor is detected between the first pull-out portion and the second pull-out portion, wherein
a bonding material flow-out preventing resist is disposed on a portion of a surface in/at +z direction side of at least one of the first lead-out portion and the second lead-out portion, and a fillet of the bonding material on the surface of at least one of the first lead-out portion and the second lead-out portion terminates at a position corresponding to a position where the bonding material flow-out preventing resist on the surface of at least one of the first lead-out portion and the second lead-out portion in/at +z direction side is disposed as viewed in cross section taken along an xz plane.

US Pat. No. 9,911,811

METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR BASE, SILICON CARBIDE SEMICONDUCTOR DEVICE, AND DEVICE FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A method for manufacturing a silicon carbide semiconductor device comprising:
a step for forming a front-surface electrode on a front surface side of a silicon carbide wafer;
a step for thinning the silicon carbide wafer by reducing a thickness of the silicon carbide wafer from a back surface side
thereof;

a step for providing a metal layer on the back surface of the thinned silicon carbide wafer;
a step for irradiating the metal layer with laser light, while applying an external force such that the silicon carbide wafer
and the metal layer are planarized, to form the carbide layer obtained by a reaction with carbon in the silicon carbide wafer,
on a back surface side of the metal layer; and

a step for forming a back-surface electrode on a back surface side of the carbide layer,
wherein the carbide layer includes a high-density portion having high carbide density and a low-density portion having low
carbide density, and

wherein the high-density portion is provided along two different directions which are in-plane directions of the carbide layer.

US Pat. No. 10,347,555

ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An electronic device comprising:a substrate;
an electronic element provided on the substrate; and
a sealing part for sealing the electronic element,
wherein an insertion part for inserting a fastening member is provided,
wherein the insertion part is provided in a sealing recessed part recessed compared with a circumferential region,
wherein at least side surface and the sealing recessed part of the sealing part are exposed to outside,
wherein the sealing recessed part has an edge part formed by the side surface and a front surface of the sealing recessed part, and
wherein the edge part is not chamfered and other parts in upper side of the sealing part are chamfered.

US Pat. No. 10,510,636

ELECTRONIC MODULE

SHINDENGEN ELECTRIC MANUF...

1. An electronic module comprising:a substrate;
an other-side electronic component provided on the other side of the substrate;
a one-side electronic component provided on the one side of the substrate;
a sealing part sealing the other-side electronic component; and
a connecting terminal having an other-side extending part extending to circumferential outside of the substrate on the other side of the substrate, the other-side extending part being exposed outside the sealing part, a one-side extending part extending to circumferential outside of the substrate on one side of the substrate, the one-side extending part being outside the sealing part, and a connecting part connecting the other-side extending part with the one-side extending part at the circumferential outside of the substrate, the connecting part being outside the sealing part, the connecting terminal electrically connecting the other-side electronic component in the sealing part with the one-side electronic component outside the sealing part,
wherein the one-side extending part, the other-side extending part, and the connecting part are integrally formed,
the other-side extending part is provided on an other side conductive layer provided on the other side of the substrate and the one-side extending part is provided on a one-side conductive layer provided on one side of the substrate, or the other-side extending part is provided on a surface on the other side of the substrate, the other side including a metal substrate and the one-side extending part is provided on a surface on one side of the substrate, the one side including the metal substrate, and
the surface on the other side of the substrate is entirely provided in the sealing part, and the surface on one side of the substrate is not sealed by the sealing part.

US Pat. No. 10,199,483

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device in which a principal current flows between one principal surface and another principal surface of a semiconductor substrate, wherein:the one principal surface of the semiconductor substrate includes an active region, and a voltage supporting region surrounding the active region and including a peripheral portion of the semiconductor substrate,
the semiconductor device comprising:
a diffusion layer of a second conductive type selectively formed on the one principal surface in the voltage supporting region, and surrounding the active region;
an insulating film formed on the diffusion layer, and on a peripheral semiconductor region of a first conductive type disposed outside the diffusion layer;
an overvoltage protection diode including semiconductor layers of the first conductive type and semiconductor layers of the second conductive type alternately disposed on the insulating film from an active region side toward the peripheral portion of the semiconductor substrate; and
a first conductor portion and a second conductor portion formed on the insulating film along the voltage supporting region,
the first conductor portion being disposed above the diffusion layer with the insulating film being disposed therebetween, and the second conductor portion being disposed above the peripheral semiconductor region with the insulating film being disposed therebetween,
an end of the first conductor portion being electrically connected to the overvoltage protection diode so that depletion occurs in the diffusion layer in a portion near the insulating film in a reverse bias application state, wherein:
the first conductive type is n-type and the second conductive type is p-type;
the end of the first conductor portion is electrically connected to a first portion of a side surface of the overvoltage protection diode so that a potential of the first conductor portion is higher than a potential of the diffusion layer immediately below the first conductor portion in the reverse bias application state; and
an end of the second conductor portion is electrically connected to a second portion of the side surface of the overvoltage protection diode so that a potential of the second conductor portion is lower than a potential of the peripheral semiconductor region immediately below the second conductor portion in the reverse bias application state, wherein the first conductor portion includes:
a first conductor forming portion extending along the peripheral portion of the semiconductor substrate;
a second conductor forming portion extending to be close to the overvoltage protection diode, one end of the second conductor forming portion being connected to the first conductor forming portion; and
a third conductor forming portion electrically connecting the second conductor forming portion and the overvoltage protection diode,
the second conductor forming portion being wider than the first conductor forming portion, and
the third conductor forming portion being narrower than a width at another end of the second conductor forming portion, and being disposed to shift toward a side end of the semiconductor substrate.

US Pat. No. 9,966,327

LEAD FRAME, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING LEAD FRAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A lead frame comprising:a lead part that includes an inner lead and an outer lead connected to the inner lead; and
a frame unit that supports the lead part, wherein
the inner lead has a terminal portion having a facing surface and a back surface on an opposite side from the facing surface, the facing surface facing a conductive pattern of a wiring board,
an outer region of the terminal portion is provided with a solder thickness ensuring portion where the facing surface is depressed toward the back surface, the solder thickness ensuring portion being thinner than a center region of the facing surface, the back surface being flat without a depression,
the terminal portion has two side edges and the solder thickness ensuring portion is formed at a tip and at both side edges of the terminal portion along an outer edge of the terminal portion, and
wherein the solder thickness ensuring portion forms a U shape along the outer edge of the terminal portion when the inner lead is viewed in plan view.

US Pat. No. 9,960,267

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device provided with an active element part and a gate pad part defined on a semiconductor substrate which is formed by laminating a low resistance semiconductor layer of a first conductive type or a second conductive type and a drift layer of the first conductive type to each other, whereinthe active element part includes:
the low resistance semiconductor layer;
the drift layer formed on the low resistance semiconductor layer;
a base region of the second conductive type formed on a surface of the drift layer;
a high concentration impurity diffusion region of the first conductive type formed on a surface of the base region;
a gate electrode layer formed on the base region sandwiched between the high concentration impurity diffusion region and the drift layer with a gate insulation layer interposed therebetween; and
a first electrode layer formed in contact with the high concentration impurity diffusion region and the base region in a state where the first electrode layer is insulated from the gate electrode layer with an interlayer insulation layer interposed therebetween, and
the gate pad part includes:
the low resistance semiconductor layer;
the drift layer formed on the low resistance semiconductor layer;
a conductor layer formed above the drift layer over the whole area of the gate pad part with a field insulation layer having a thickness of 200 nm to 500 nm interposed therebetween; and
a gate oscillation suppressing structure where a first region having a diffused impurity of the second conductive type and which is electrically connected to the first electrode layer on the surface of the drift layer, and a second region having a non diffused impurity of the second conductive type formed on the surface of the drift layer,
wherein
the base region has a first surface in contact with the first electrode layer, the high concentration diffusion region has a second surface in contact with the first electrode layer, and the first surface, the second surface, are coplanar with the surface of the drift layer,
a plurality of first regions and a plurality of second regions are alternately formed, completely separated from each other, on the surface of the drift layer so as to be in direct contact with the field insulation layer, and
the second region of the plurality of second regions is on the drift layer of the first conductive type or a reference concentration semiconductor layer of the first conductive type so as to increase gate drain capacitance of the semiconductor device.

US Pat. No. 9,640,618

SILICON CARBIDE SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF DESIGNING SILICON CARBIDE SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A silicon carbide semiconductor device, comprising:
a silicon carbide layer of a first conductivity type;
a silicon carbide layer of a second conductivity type formed on the silicon carbide layer of the first conductivity type;
a gate trench formed to extend from a surface of the silicon carbide layer of the second conductivity type to such a depth
that the gate trench reaches the silicon carbide layer of the first conductivity type;

a gate electrode provided in the gate trench with an insulating film interposed between a wall of the gate trench and the
gate electrode;

first and second protection trenches formed to extend from the surface of the silicon carbide layer of the second conductivity
type to a depth greater than the depth of the gate trench; and

a first conductive member provided in the first and second protection trenches,
wherein a cell region in a horizontal extent includes both the gate trench and the first protection trench that surrounds
a part of the gate trench in the horizontal extent, and

a gate region in the horizontal extent includes the second protection trench and in which a gate pad or a lead electrode connected
to the gate pad is disposed,

a second conductive member is provided above the gate trench in the cell region and in the gate region,
wherein the second conductive member is disposed to extend from above the gate trench in the cell region to the gate region
through a region of the second conductive member directly above a part of the cell region in which the first protection trench
is not provided but is not disposed directly above any part of the cell region in which the first protection trench is provided.

US Pat. No. 10,212,772

LED CONTROL DEVICE AND CONTROL METHOD OF LED CONTROL DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An LED control device configured to control LED devices, comprising:a first terminal to which a first electrode of a battery is connected, and a first node of a first LED device and a first node of a second LED device are connected;
a second terminal to which a second electrode of the battery is connected;
a first switching element connected between a second node of the first LED device and the second terminal to control a current flowing through the first LED device;
a first detection resistor through which at least a part of a current flowing through the first switching element flows;
a first integration circuit configured to output a first reference signal obtained by integrating a first PWM light controlling signal defining a dimming ratio of the first LED device;
a first control unit configured to control an operation of the first switching element by a first control signal based on a relationship between a first reference value obtained from the first reference signal and a first detection voltage value of the first detection resistor;
a second switching element connected between a second node of the second LED device and the second terminal, and configured to control a current flowing through the second LED device;
a second detection resistor through which at least a part of a current flowing through the second switching element flows;
a second integration circuit configured to integrate a second PWM light controlling signal defining a dimming ratio of the second LED device to output a second reference signal; and
a second control unit configured to control an operation of the second switching element by a second control signal based on a relationship between a second reference value obtained from the second reference signal and a second detection voltage value at the second detection resistor,
wherein
the first integration circuit changes the first reference signal to be different from the second reference signal in one cycle of the first PWM light controlling signal, and
the first control unit controls, in the one cycle of the first PWM light controlling signal, the first switching element by the first control signal at a first operational frequency for turning on and off the first switching element, the first operational frequency being different from a second operational frequency for turning on and off the second switching element.

US Pat. No. 10,083,844

METHOD OF MANUFACTURING BONDED BODY

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a bonded body having a structure where a substrate and an electronic part are bonded to each other with a metal particle paste interposed therebetween, the method comprising:an assembled body forming step of forming an assembled body where the electronic part is mounted on the substrate with the metal particle paste interposed therebetween;
an assembled body arranging step of arranging the assembled body between two heating plates arranged in an opposedly facing manner; and
a bonding step of bonding the substrate and the electronic part to each other by heating while applying pressure to the assembled body by moving at least one of said two heating plates to the other of said two heating plates,
wherein:
the bonding step is performed under a condition that a temperature of the assembled body at the time of starting applying of the pressure to the assembled body by said two heating plates falls within a range of from 0° C. to 150° C., and
in the assembled body arranging step, the assembled body is arranged in a space defined between said two heating plates at a position where the assembled body is in physical contact with neither one of said two heating plates, and
in the bonding step, at least one of said two heating plates starts to move with the assembled body being arranged in a space defined between said two heating plates at a position where the assembled body is in physical contact with neither one of said two heating plates,
wherein the method of manufacturing a bonded body further comprises, between the assembled body forming step and the assembled body arranging step, a pressure applying unit forming step for forming a pressure applying unit where the assembled body is sandwiched between two transfer members which transfer pressure and heat, and
in the assembled body arranging step, the pressure applying unit is arranged in a space defined between said two heating plates at a position where the pressure applying unit is in physical contact with neither one of said two heating plates.

US Pat. No. 9,978,882

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND GLASS FILM FORMING APPARATUS

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising:a semiconductor wafer preparing step of preparing a semiconductor wafer where a base insulating film is formed on a glass film forming scheduled surface; and
a glass film forming step of forming a glass film on the glass film forming scheduled surface by electrophoresis in a state where a first electrode plate and a second electrode plate are disposed so as to opposedly face each other in a tank in which a suspension formed by suspending fine glass particles in a solvent is stored, wherein the first electrode plate and the second electrode plate are immersed in the suspension, the semiconductor wafer is positioned between the first electrode plate and the second electrode plate without contacting the first and second electrode plates, and the glass film forming scheduled surface faces the first electrode plate, wherein
in the glass film forming step, a ring-shaped electrode plate having an opening which has a diameter smaller than a diameter of the semiconductor wafer is positioned between the first electrode plate and the second electrode plate, the semiconductor wafer is positioned between the ring-shaped electrode plate and the second electrode plate, and the glass film is formed on the glass film forming scheduled surface in which the ring-shaped electrode plate is biased to a potential closer to a potential of the first electrode plate than to a potential of the second electrode plate.

US Pat. No. 9,892,993

SEMICONDUCTOR MODULE HAVING STACKED INSULATED SUBSTRATE STRUCTURES

Shindengen Electric Manuf...

1. A semiconductor module comprising:
a first insulating substrate;
a first conductor layer provided on a mounting surface of the first insulating substrate;
a first electronic element provided on the first conductor layer;
a second insulating substrate;
a second conductor layer provided on a mounting surface of the second insulating substrate; and
a second electronic element provided on the second conductor layer;
a sealing resin, which covers an overall mounting region within the mounting surface of the first insulating substrate, the
first conductor layer, the first electronic element, the second electronic element, the second conductor layer and an overall
mounting region within the mounting surface of the second insulating substrate; and

a frame body, which is made of metal and covers the overall sealing resin;
wherein the first conductor layer, the first electronic element, the second electronic element and the second conductor layer
are arranged in an order between the first insulating substrate and the second insulating substrate;

wherein a conductive column is placed between an upper surface of the first electronic element and a lower surface of the
second electronic element, and the conductive column connects the upper surface of the first electronic element with the lower
surface of the second electronic element;

wherein the first electronic element and the second electronic element are switching devices; and
wherein the conductive column is connected to a source electrode.

US Pat. No. 10,269,775

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a first board; and
an intermediate layer being provided on the first board and having a plurality of connectors, which are not solders, and a resin board section, in which the plurality of connectors are fixed;
wherein the connector passes through the resin board section, and a front face of the connector and a rear face of the connector are respectively exposed from the resin board section,
wherein the first board has a positioning section that positions the intermediate layer,
wherein the resin board section of the intermediate layer is provided with a positioning insertion section, into which the positioning section is inserted,
wherein an electronic element being a power device is provided on the front face of the connector or the rear face of the connector
wherein an area of the connector in a top plan view is larger than an area of the electronic element in the top plan view, and
wherein a control unit configured to control the electronic element is provided at the resin board section of the intermediate layer and is not provided on the connector.

US Pat. No. 9,859,804

POWER SUPPLY DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power supply device comprising:
a transformer including a primary winding and a first secondary winding;
a first switching element on a secondary side of the transformer, the first switching element being configured to perform
synchronous rectification;

a first rectifier on the secondary side of the transformer, the first rectifier being connected in series to the first switching
element, one end of the first secondary winding being connected between the first switching element and the first rectifier;

a first capacitor and a second capacitor on the secondary side of the transformer, the first capacitor and the second capacitor
being connected directly in series, the first capacitor including first and second electrodes, the second capacitor including
third and fourth electrodes, the first electrode being connected directly to the first switching element and a ground, the
second electrode being connected to the third electrode, and the fourth electrode being connected to the first rectifier;
and

a coil on the secondary side of the transformer, one end of the coil being connected to an other end of the first secondary
winding, an other end of the coil being connected between the second electrode of the first capacitor and the third electrode
of the second capacitor and being connected to a battery via an output terminal, on the secondary side, of the power supply
device,

wherein the first capacitor and the second capacitor are configured to charge by voltage-dividing, via the first rectifier,
a first surge voltage to be generated in the first switching element by energy supplied from the battery and charged in the
coil in a first case that the battery becomes larger in voltage than the output terminal, and the first switching element
is turned off.

US Pat. No. 10,490,490

THERMALLY CONDUCTIVE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a plurality of wiring boards disposed separately from one another;
a plurality of semiconductor elements disposed on first main surfaces of the plurality of wiring boards and electrically connected to the plurality of wiring boards;
a plurality of terminals electrically connected to the plurality of wiring boards; and
a resin sealing the plurality of wiring boards and the plurality of semiconductor elements so that second main surfaces of the plurality of wiring boards are exposed, wherein
the plurality of wiring boards include a power supply wiring board, a first ground wiring board, and a first output wiring board,
the power supply wiring board has a narrow portion and a wide portion continuously extending in a linear direction,
the first output wiring board has a narrow portion and a wide portion continuously extending in the linear direction,
a first semiconductor element of the plurality of semiconductor elements is disposed on the wide portion of the power supply wiring board, and
the resin has pin holes at a boundary portion between the narrow portion and the wide portion of the power supply wiring board, and a boundary portion between the narrow portion and the wide portion of the first output wiring board.

US Pat. No. 10,199,486

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:an insulating substrate;
a first conductive pattern part formed on the insulating substrate;
a second conductive pattern part formed on the insulating substrate;
a third conductive pattern part formed on the insulating substrate;
a fourth conductive pattern part formed on the insulating substrate;
a fifth conductive pattern part formed on the insulating substrate;
a first GaN-HEMT having a first GaN main electrode, a second GaN main electrode and a first GaN gate electrode and disposed on the first conductive pattern part;
a first MOS-FET having a first MOS main electrode, a second MOS main electrode and a first MOS gate electrode, the first MOS main electrode being electrically connected to the second GaN main electrode;
a second GaN-HEMT having a third GaN main electrode, a fourth GaN main electrode and a second GaN gate electrode and disposed on the second conductive pattern part;
a second MOS-FET having a third MOS main electrode, a fourth MOS main electrode and a second MOS gate electrode, the third MOS main electrode being electrically connected to the fourth GaN main electrode; and
a bypass capacitor having a first electrode and a second electrode,
the first GaN main electrode of the first GaN-HEMT being electrically connected to the third conductive pattern part, the second MOS main electrode of the first MOS-FET being electrically connected to the fourth conductive pattern part, the third GaN main electrode of the second GaN-HEMT being electrically connected to the fourth conductive pattern part, the fourth MOS main electrode of the second MOS-FET being electrically connected to the fifth conductive pattern part, the first electrode of the bypass capacitor being electrically connected to the third conductive pattern part, the second electrode of the bypass capacitor being electrically connected to the fifth conductive pattern part,
the first GaN-HEMT having a first side and a second side opposite to the first side, the second GaN-HEMT having a third side and a fourth side opposite to the third side,
the first GaN main electrode of the first GaN-HEMT being provided along the first side, the third GaN main electrode of the second GaN-HEMT being provided along the third side, a first imaginary line extending along the first side and a second imaginary line extending along the third side intersecting each other,
the second GaN-HEMT having a fifth side connecting the third side and the fourth side, the fifth conductive pattern part having a conductive pattern side opposite to the fifth side,
the second GaN gate electrode of the second GaN-HEMT being electrically connected to the fifth conductive pattern part via a connection member, the connection member being perpendicular to the fifth side and the conductive pattern side.

US Pat. No. 10,122,264

CONTROL DEVICE AND PROGRAM PRODUCT FOR REDUCING A NOISE PEAK LEVEL

SHINDENGEN ELECTRIC MANUF...

1. A control device that controls a frequency of a control signal for controlling on and off of a switching element, the control device comprising:a storage unit configured to store a frequency table defining a change value for a frequency of the control signal; and
a frequency changing unit configured to change the frequency of the control signal, independent of an input voltage, every time a predetermined time period elapses, according to the change value defined in the frequency table,
wherein the frequency changing unit changes the frequency of the control signal according to the change value defined in the frequency table, and
wherein the frequency changing unit performs one of:
changing of the frequency of the control signal to a predetermined upper limit, when a value obtained by adding the change value defined in the frequency table to the frequency of the control signal is greater than the upper limit, and
changing of the frequency of the control signal to a predetermined lower limit, when a value obtained by subtracting the change value defined in the frequency table from the frequency of the control signal is smaller than the lower limit.

US Pat. No. 10,103,096

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:at least one circuit unit including
a device main body, and
a power supply terminal, an output terminal, gate terminals, and a ground terminal which protrude from the device main body,
wherein the output terminal protrudes from the device main body in an opposite direction to the ground terminal,
the power supply terminal protrudes in a same direction as the ground terminal and is positioned so as to be shifted in a direction orthogonal to an arrangement direction of the output terminal and the ground terminal,
the power supply terminal protrudes from the device main body in an opposite direction to the gate terminals,
the power supply terminal, the output terminal, and the ground terminal are larger in width than the gate terminals,
the device main body comprises
a power supply wiring board connected to the power supply terminal,
a ground wiring board connected to the ground terminal,
an output wiring board connected to the output terminal, and
gate wiring boards connected respectively to the gate terminals,
the power supply wiring board has plural pairs of narrow portions and wide portions continuously extending in the direction orthogonal to the arrangement direction of the output terminal and the ground terminal,
the output wiring board has a narrow portion and a wide portion continuously extending in the direction orthogonal to the arrangement direction of the output terminal and the ground terminal,
the ground wiring board is disposes so as to face the wide portion of the output wiring board via the narrow portion of the power supply wiring board,
the wide portion of the power supply wiring board is disposed so as to face the narrow portion of the output wiring board,
the wide portion of the power supply wiring board in a same direction as the power supply terminal with respect to the narrow portion of the power supply wiring board,
the wide portion of the output wiring board protrudes in a same direction as the output terminal with respect to the narrow portion of the output wiring board,
the ground wiring board is adjacent to the narrow portion of the power supply wiring board on a side of a surface of the power supply wiring board toward which the wide portion of the power supply wiring board protrudes, and
the gate wiring boards include
a first gate wiring board adjacent to the narrow portion of the output wiring board, and
a second gate wiring board disposed between the output wiring boards of two adjacent circuit units.

US Pat. No. 9,698,069

GLASS COMPOSITION FOR PROTECTING SEMICONDUCTOR JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device, comprising:
a silicon-made semiconductor element having a pn junction; and
a glass layer which covers the pn junction, wherein
the glass layer is formed by baking a layer made of a glass composition,
the glass composition comprises fine glass particles prepared from a material in a molten state obtained by melting a glass
material which contains at least SiO2, B2O3, Al2O3, ZnO, and at least two oxides of alkaline earth metals selected from the group consisting of CaO, MgO and BaO, and substantially
contains none of Pb, As, Sb, Li, Na and K,

the content of SiO2 falls within a range of 49.5 mol % to 58.8 mol %,

the content of B2O3 falls within a range of 8.4 mol % to 17.9 mol %,

the content of Al2O3 falls within a range of 3.7 mol % to 14.8 mol %,

the content of ZnO falls within a range of 3.9 mol % to 14.2 mol %,
the content of the oxides of alkaline earth metals falls within a range of 7.4 mol % to 12.9 mol %,
the content of CaO falls within a range of 2.0 mol % to 5.3 mol %,
the content of MgO falls within a range of 1.0 mol % to 2.3 mol %,
the content of BaO falls within a range of 2.6 mol % to 5.3 mol %, and
an average linear expansion coefficient within a temperature range of 50° C. to 550° C. falls within a range of 3.33×10?6 to 4.13×10?6.

US Pat. No. 10,566,420

SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A semiconductor device in which main electric current flows between one main surface and another main surface of a semiconductor substrate,the one main surface of the semiconductor substrate being provided with an active region on which the main electric current flows and a voltage supporting region surrounding the active region and including a periphery of the semiconductor substrate,
the semiconductor device comprising an overvoltage protection diode in which an N-type semiconductor layer and a P-type semiconductor layer, formed on an insulating film in the voltage supporting region, are alternately disposed adjacently to each other,
the overvoltage protection diode being disposed at a corner portion on an upper face of the insulating film formed on the semiconductor substrate, and extending from the corner portion toward a center portion of the semiconductor substrate,
a lateral width of each of the N-type semiconductor layer and the P-type semiconductor layer is increased toward the center portion.

US Pat. No. 10,319,704

SEMICONDUCTOR MODULE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor module comprising:a first substrate having a first insulating substrate and a first conductor layer which is formed on at least one surface of the first insulating substrate;
a power device part having a first electrode on one surface thereof and a second electrode and a gate electrode on the other surface thereof and having the first electrode bonded to the first conductor layer;
a second substrate having a second insulating substrate and a second conductor layer formed on at least one surface of the second insulating substrate, wherein the second conductor layer has a bonding portion bonded to the second electrode and a surrounding wall portion formed at a position which surrounds the bonding portion as viewed in a plan view in a state where an upper end surface of the surrounding wall portion projects from a bonding surface between the bonding portion and the second electrode, and the second substrate is in contact with the first substrate by way of the surrounding wall portion;
an inner resin portion made of a resin and disposed in a space defined by the surrounding wall portion and sandwiched between the first insulating substrate and the second insulating substrate;
a control IC disposed at a position being spaced apart from the power device part; and
an outer resin portion made of a resin and disposed on one surface side of the first substrate so as to cover at least the second substrate and the control IC, wherein
the power device part is disposed such that the gate electrode is positioned outside a region defined by the surrounding wall portion as viewed in a plan view, and
the gate electrode is electrically connected to an output terminal of the control IC through a predetermined connecting member.

US Pat. No. 10,256,651

BATTERY CHARGING DEVICE AND METHOD OF CONTROLLING BATTERY CHARGING DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A battery charging device, comprising:a conversion part that converts an alternating current output from an alternating-current generator into a direct current by a switching element and supplies the direct current to a battery;
a number-of-revolutions acquisition part that acquires a number of revolutions of the alternating-current generator based on a signal responsive to the operation of the alternating-current generator; and
an output control part that determines an energization phase angle that defines a timing of energization of the switching element of the conversion part for supplying a charging current from the alternating-current generator to the battery, and controls energization of the switching element based on the energization phase angle,
wherein the output control part
has a table that defines a relationship between the charging current of the battery and the energization phase angle and a relationship between the number of revolutions of the alternating-current generator and a correction value with which the energization phase angle is corrected in response to the number of revolutions, and
the output control part
acquires the energization phase angle and the correction value by referring to the table for the charging current to be output and the number of revolutions acquired by the number-of-revolutions acquisition part, and corrects the energization phase angle with the correction value.

US Pat. No. 10,243,477

SEMICONDUCTOR DEVICE HAVING A BYPASS CAPACITOR

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:an insulating substrate;
a first conductive pattern part formed on the insulating substrate;
a second conductive pattern part formed on the insulating substrate;
a third conductive pattern part formed on the insulating substrate;
a fourth conductive pattern part formed on the insulating substrate;
a fifth conductive pattern part formed on the insulating substrate;
a first semiconductor switching part having a first main electrode and a second main electrode and disposed on the first conductive pattern part;
a second semiconductor switching part having a third main electrode and a fourth main electrode and disposed on the second conductive pattern part; and
a bypass capacitor having a first electrode and a second electrode,
the first main electrode of the first semiconductor switching part being electrically connected to the third conductive pattern part, the second main electrode of the first semiconductor switching part being electrically connected to the fourth conductive pattern part, the third main electrode of the second semiconductor switching part being electrically connected to the fourth conductive pattern part, the fourth main electrode of the second semiconductor switching part being electrically connected to the fifth conductive pattern part, the first electrode of the bypass capacitor being electrically connected to the third conductive pattern part, the second electrode of the bypass capacitor being electrically connected to the fifth conductive pattern part,
the first semiconductor switching part having a first side and a second side opposite to the first side, the second semiconductor switching part having a third side and a fourth side opposite to the third side,
the first main electrode being provided along the first side, the second main electrode being provided along the second side, the third main electrode being provided along the third side, the fourth main electrode being provided along the fourth side,
a first imaginary line extending along the first side and a second imaginary line extending along the third side intersecting each other.

US Pat. No. 9,991,184

ELECTRONIC MODULE AND METHOD OF MANUFACTURING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. An electronic module comprising:a first electronic module including a first substrate that has a first principal surface and a second principal surface on a side opposite to the first principal surface, and a first electronic element that is mounted on the first principal surface;
a second electronic module including a second substrate that has a third principal surface and a fourth principal surface on a side opposite to the third principal surface and that is arranged such that the third principal surface faces the first principal surface, a second electronic element that is mounted on the third principal surface and is electrically connected to the first electronic element with a first connecting member therebetween, and a third electronic element that is mounted on the fourth principal surface and is electrically connected to the first electronic element with a second connecting member therebetween passing through the second substrate in a thickness direction, the second electronic module being thermally connected to the first electronic module by the first and second connecting members; and
a heat sink including a base plate that has a housing part therein, and housing the first and second electronic modules in the housing part such that the second principal surface of the first substrate is in contact with an inner wall surface of the housing part and that an end portion of the first substrate is in direct contact with a concave portion provided in an inner wall of the housing part of the base plate,
wherein a plurality of fins are erected on the base plate of the heat sink.

US Pat. No. 10,553,523

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a main body portion;
a semiconductor element which is mounted on the main body portion;
a sealing portion which covers the main body portion and the semiconductor element with a sealing resin and which is fixed to an external member; and
a first lead which is electrically connected to the semiconductor element, and protrudes in a first direction, outward from the sealing portion;
wherein the first lead has a first base end portion which is provided along the first direction, a protruding portion which protrudes from the first base end portion in a second direction different from the first direction and perpendicular to the first direction, and which has a positioning hole formed therein, into which a positioning protrusion can be inserted, and a first tip end portion which is provided in the first base end portion via a bent portion, which extends in a direction different from the first direction and the second direction, perpendicular to the first direction and the second direction, and which is for electrically connecting to an external circuit;
wherein a slit, along the first direction, is formed in the protruding portion adjacent to the bent portion;
wherein a center of the positioning hole is positioned more on the side opposite to the bent portion than a straight line extending in the slit and extending along the first direction from a slit end portion adjacent to the bent portion; and
wherein a part of the protruding portion, which is on the side opposite to the bent portion than the straight line in the slit and extending along the first direction, is not bent.

US Pat. No. 10,468,480

MOSFET AND POWER CONVERSION CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. A MOSFET comprising:a semiconductor base substrate having: an n-type column region and a p-type column region formed in an alternately arranged state; a p-type base region positioned on a surface of the n-type column region and a surface of the p-type column region; and an n-type source region positioned on a surface of the base region, wherein a super junction structure is formed of the n-type column region and the p-type column region;
a trench formed in a region where the n-type column region is positioned as viewed in a plan view, and having side walls disposed adjacently to the n-type column region, the base region and the source region and a bottom disposed adjacently to the n-type column region;
a gate electrode formed in the trench by way of a gate insulation film;
a carrier compensation electrode positioned between the gate electrode and the bottom of the trench;
an insulation region disposed in the trench, the insulation region extending between the gate electrode and the carrier compensation electrode, and extending along the side walls and the bottom of the trench thus separating the carrier compensation electrode from the side walls and the bottom; and
a source electrode positioned on a surface of the semiconductor base substrate on a first main surface side, the source electrode electrically connected to the source region and also electrically connected to the carrier compensation electrode, wherein
the semiconductor base substrate further has a low-resistance semiconductor layer formed on a surface thereof on a second main surface side which is a side opposite to the first main surface, and
assuming a thickness of the carrier compensation electrode from an uppermost portion to a lowermost portion as b and assuming a depth from a lowermost portion of the gate electrode to an uppermost portion of the low-resistance semiconductor layer as c, a relationship of 10b?c is satisfied.

US Pat. No. 10,326,290

POWER CONVERTING DEVICE AND METHOD OF CONTROLLING POWER CONVERTING DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power converting device configured to convert any of DC voltages outputted from at least two DC power supplies, comprising:a first DC power supply configured to output a first DC voltage;
an AC power supply configured to output an AC voltage;
a primary coil included in a transformer, the AC voltage outputted from the AC power supply being applied to the primary coil;
a secondary coil included in the transformer;
a first rectifier element having an end that is connected to an end of the secondary coil;
a capacitor having an end that is connected to another end of the first rectifier element, and another end that is connected to another end of the secondary coil;
a second DC power supply configured to output a second DC voltage that is different from the first DC voltage;
a switch including a first contact connected to an output of the second DC power supply, and a second contact connected to an output terminal for outputting a first power supply voltage, the switch being turned on to electrically connect the first contact and the second contact, and being turned off to electrically disconnect the first contact and the second contact;
a second rectifier element having an end that is connected to the end of the capacitor, and an another end that is connected to the first contact;
a detection element connected between the output terminal and the other end of the capacitor, and configured to output a detection signal based on a detection current flowing between the output terminal and the other end of the capacitor;
a switching element connected in series with the detection element between the output terminal and the other end of the capacitor; and
a control unit that is supplied with a second power supply voltage to operate, receives the detection signal, and controls operations of the AC power supply, the switching element, and the switch,
wherein
before the second DC power supply outputs the second DC voltage, the control unit determines whether the first contact and the second contact of the switch are melted and joined together based on the detection signal.

US Pat. No. 10,290,734

MOSFET AND POWER CONVERSION CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. A MOSFET comprising: a semiconductor base substrate having the super junction structure which is formed of an n-type column region and a p-type column region; and a gate electrode formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein using a deepest position of a surface of a depletion layer on the first main surface side when the depletion layer extends most in the super junction structure by turning off the MOSFET as a reference, in a graph where a depth x at a predetermined depth position in the super junction structure when the super junction structure is depleted by turning off the MOSFET is taken on an axis of abscissas, and an average positive charge density p(x) at the predetermined depth position in the super junction structure expressed by a following formula (1) when the super junction structure is depleted by turning off the MOSFET is taken on an axis of ordinates, the average positive charge density p(x) is expressed by an upward convex curve projecting in a right upward direction, and using a deepest position of a surface of a depletion layer on the first main surface side when the depletion layer extends most in the super junction structure by turning off the MOSFET as a reference, assuming a depth of a surface of the depletion layer on a second main surface side at a shallowest position when the depletion layer extends most in the super junction structure by turning off the MOSFET as a, a value of the average positive charge density p(0) when x=0 becomes a negative value and a value of the average positive charge density p(a) when x=a becomes a positive value, and an area of a region surrounded by a curve which expresses the average positive charge density p(x), a straight line where x=0 and the axis of abscissas is equal to an area of a region surrounded by the curve which expresses the average positive charge density p(x), a straight line where x=a and the axis of abscissas;[Formula 1]
P(x)=q/2w[Wn(x)·Nd(x)?wp(x)·Na(x)]  (1)
(In the formula (1), wn (x) indicates a width of the n-type column region at the predetermined depth position, Nd(x) indicates average density of a positive charge at the predetermined depth position in the n-type column region when the super junction structure is depleted by turning off the MOSFET, wp(x) indicates a width of the p-type column region at the predetermined depth position, Na(x) indicates average density of a negative charge at the predetermined depth position in the p-type column region when the super junction structure is depleted by turning off the MOSFET, q indicates an elementary charge, and w indicates a positive constant which satisfies wn(x)+wp(x)=2w).

US Pat. No. 10,012,199

POWER CONVERSION DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power conversion device configured to convert an output of an AC generator into a desired DC power and supply the desired DC power to a first load and a second load, the power conversion device comprising:a first rectifier circuit connected in series to the first load, the first rectifier circuit including at least one pair of diodes, an output portion of the AC generator being connected between each pair of diodes, the first rectifier circuit being configured to rectify the output of the AC generator and supply the rectified output to the first load;
a second rectifier circuit connected in series to the second load, the second rectifier circuit including at least one pair thyristors, anodes of each pair of thyristors being connected in series to each other, the output portion of the AC generator being connected between each pair of thyristors, one of each pair of thyristors being configured to, by entering a conductive state, rectify the output of the AC generator and supply the rectified output to the second load, and an other one of each pair of thyristors being configured to, by entering a conductive state, supply the output of the AC generator in a direction reverse to a direction from a cathode of the one of each pair of thyristors toward the second load;
an output voltage control circuit configured in parallel to the first rectifier circuit, the output voltage control circuit being configured to control the other one of each pair of thyristors so that an output voltage of the first rectifier circuit becomes a desired voltage,
wherein as a result of that the output voltage of the first rectifier circuit becomes the desired voltage an output voltage of the second rectifier circuit also becomes a desired voltage.

US Pat. No. 10,559,478

METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A manufacturing method for an electronic device comprising:a step of placing a substrate, which has a metal plate on a back-surface side, on a back-surface-side mold having a mold recessed part;
a step of placing an insertion part for inserting a fastening member on a front surface of the substrate and peripherally inside the mold recessed part;
a step of placing a front-surface-side mold on the back-surface-side mold so as to cover the substrate; and
a step of pouring resin by potting between the front-surface mold and the back-surface-side mold, while the substrate is pressed against the back-surface-side mold,
wherein the metal plate is pressed against the back-surface-side mold by pressing a top part of the insertion part and circumferential part, peripherally outside the insertion part, of the metal plate is in contact with an edge of the mold recessed part, when the substrate is pressed against the back-surface-side mold in the step of pouring resin,
wherein the metal plate has a central metal body part surrounded by a peripheral metal thinned part surrounding the metal body part and which is thinner than the metal body part,
wherein the metal thinned part is located outward of circumference of the mold recessed part and the metal body part is in contact with an edge of the circumference of the mold recessed part, when the metal plate is pressed against the back-surface-side mold in the step of pouring resin.

US Pat. No. 10,090,225

PLACEMENT BASE FOR SEMICONDUCTOR DEVICE AND VEHICLE EQUIPMENT

Shindengen Electric Manuf...

1. A placement base of a semiconductor device comprising:a body on which the semiconductor device is disposed, and the body having a supporting unit, on which a back face of the semiconductor device is placed, being configured to support at least a part of a periphery of the back face of the semiconductor device, and a bottom surface being placed in an inner periphery of the supporting unit and being placed lower than the supporting unit; and
a fixing unit, which is provided to the supporting unit, for fixing the semiconductor device to the body; and
wherein a difference in height ?H between the supporting unit and the bottom surface is larger than a sum (H1+H2) of a calculated or measured maximum upward warp H1 of the bottom surface and a calculated or measured maximum downward warp H2 of a base of the semiconductor device.

US Pat. No. 9,859,414

SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A semiconductor device, comprising:
a drift layer of a first conductivity type;
a base layer of a second conductivity type that is disposed on the drift layer and is connected to a source electrode;
a column layer of a second conductivity type that is connected to the source electrode and penetrates the base layer to extend
into the drift layer;

a pair of first gate electrodes surrounded by a first insulating layer disposed in a pair of first trenches provided on opposite
sides of an upper end of the column layer;

a source region of the first conductivity type that is provided in the base layer, is adjacent to the first insulating layer
on a side of the first insulating layer opposite to the column layer, and is connected to the source electrode; and

a second gate electrode surrounded by a second insulating layer that is disposed in a second trench formed in the column layer
between the pair of first gate electrodes in a horizontal direction

wherein a depth of the first trench is equal to a depth of the second trench,
a sidewall of the first trench on a side of the column layer is embedded inside the column layer, and
a plurality of second insulating layers and a plurality of second gate electrodes are provided.

US Pat. No. 10,600,712

ELECTRONIC DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An electronic device comprising:a substrate;
a conductor layer having a first conductor layer and a second conductor layer provided on the substrate;
a first electric element provided on the first conductor layer;
a second electric element provided on the first electric element; and
a connector consisting of a base end part having a supporting surface, which is provided on the second conductor layer, and a head part integrally formed with the base end part, connected to a front surface electrode of the second electric element via a conductive adhesive, and extending parallel to the supporting surface,
wherein an area of the base end part placed on the second conductor layer is larger than an area of the head part placed on the second electric element,
wherein the base end part has a bent part being bent and extending toward an upper side,
wherein the base end part is located at a side of the substrate compared with the head part, and a gravity center position of the connector is at a side of the base end part of the connector and is located lower than the head part,
wherein the head part has a second projection protruding toward a side of the second electric element and a first projection protruding toward the side of the second electric element from the second projection,
wherein a planar shape of the second projection is an oval shape, and
wherein a major axis of the oval shape is provided along a width direction of the head part.

US Pat. No. 10,411,141

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a semiconductor base body where a second semiconductor layer of a first conductive type is stacked on a first semiconductor layer of the first conductive type or a second conductive type, a trench having a predetermined depth is formed on a surface of the second semiconductor layer, and a third semiconductor layer of the second conductive type which is formed of a monocrystal epitaxial layer is formed in the inside of the trench;
a first electrode which is positioned on a surface of the first semiconductor layer;
an interlayer insulation film which is positioned on a surface of the second semiconductor layer and on a surface of the third semiconductor layer and has a predetermined opening formed within a region where at least the third semiconductor layer is formed as viewed in a plan view, the opening being filled with metal; and
a second electrode which is positioned over the interlayer insulation film, wherein
the opening is disposed at a position avoiding a center portion of the third semiconductor layer as viewed in a plan view,
the second electrode is connected to at least the third semiconductor layer through the metal filled in the opening, and
a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

US Pat. No. 10,326,010

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Shindengen Electric Manuf...

1. A semiconductor device, comprising:a semiconductor substrate having a first surface and a second surface opposing the first surface;
a first electrode on the first surface;
a second electrode on the second surface; and
a gate electrode on the first surface, the gate electrode being not in direct physical contact with the first electrode,
wherein the semiconductor substrate includes:
a first region of a first conductivity type in contact with the first surface;
a second region of a second conductivity type in contact with the first surface, the second region including the first region;
a third region of the first conductivity type in contact with the second surface;
a fourth region of the first conductivity type between the second region and the third region, the fourth region being not in direct physical contact with the first surface and the second surface, the fourth region having an impurity concentration lower than that of the third region;
a fifth region of the second conductivity type included in the first region, the fifth region being in contact with the first surface and the first electrode;
a sixth region of the second conductivity type included in the first region, the sixth region being in contact with the first surface and the gate electrode, and the sixth region being not in direct physical contact with the fifth region and the first electrode;
a seventh region of the first conductivity type included in the first region, the seventh region having an impurity concentration higher than that of the first region, the seventh region being in contact with the first surface and the first electrode, and the seventh region being not in direct physical contact with the fifth region, the sixth region, and the gate electrode;
an eighth region of the second conductivity type in contact with the second surface, the third region, and the fourth region, and the eighth region being not in direct physical contact with the first region and the second region;
a first thyristor in which the seventh region, the first region, the second region, the fourth region, and the eighth region are joined sequentially from the first surface to the second surface, and the first thyristor being configured to allow a first current to flow from the first electrode to the second electrode;
a second thyristor in which the third region, the fourth region, the second region, the first region, and the fifth region are joined sequentially from the second surface to the first surface, and the second thyristor being configured to allow a second current to flow from the second electrode to the first.

US Pat. No. 9,997,437

POWER SEMICONDUCTOR MODULE FOR IMPROVED THERMAL PERFORMANCE

Shindengen Electric Manuf...

1. A semiconductor module comprising:a first member having a first insulating substrate, a first conductor layer provided on a mounting surface of the first insulating substrate, a first power device provided on the first conductor layer and a first connection part connected to the first power device;
a second member having a second insulating substrate, a second conductor layer provided on a mounting surface of the second insulating substrate, a second power device provided on the second conductor layer and a second connection part connected to the second power device;
a conductor column extending from the first power device to the second power device between the first power device and the second power device, wherein a length of the conductor column in a direction from the first power device to the second power device between the first power device and the second power device is longer than a length of the conductor column in a direction vertical to the direction from the first power device to the second power device; and
a sealing resin covering the first conductor layer, the first power device, the second conductor layer, the second power device and the conductor column;
wherein the first power device and the second power device are disposed opposite to each other and connected to each other via the conductor column,
wherein positions of the first power device and the second power device are shifted,
wherein the second conductor layer is provided in a region that is distinct from the region of the first connection part, and
wherein the first conductor layer is provided in a region that is distinct from the region of the second connection part.

US Pat. No. 10,770,439

ELECTRONIC MODULE

SHINDENGEN ELECTRIC MANUF...

1. An electronic module comprising:a first electronic unit which has a first insulating substrate and a first electronic element provided on the first insulating substrate via a first conductor layer;
a second electronic unit which has a second insulating substrate and a second electronic element provided on the second insulating substrate via a second conductor layer;
a connecting body provided between the first electronic unit and the second electronic unit; and
a coil wound around the connecting body,
wherein the connecting body having the coil wound therearound is provided between the first insulating substrate and the second insulating substrate, and
wherein the first electronic element and the coil are electrically connected through pseudocapacitors in the first insulating substrate, and the second electronic element and the coil are electrically connected through pseudocapacitors in the second insulating substrate.

US Pat. No. 10,600,869

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SHINDENGEN ELECTRIC MANUF...

1. A silicon carbide semiconductor device comprising:an epitaxial layer of a first conductive type;
a first semiconductor region of a first conductive type formed on a surface of the epitaxial layer of the first conductive type, and having higher impurity concentration than that of the epitaxial layer of the first conductive type;
a body region of a second conductive type formed at a position deeper than that of the first semiconductor region of the first conductive type;
a channel region of a second conductive type formed such that
the channel region of the second conductive type
penetrates the first semiconductor region of the first conductive type from a surface of the epitaxial layer of the first conductive type,
reaches the body region of the second conductive type, and
defines
a first part of the first semiconductor region of the first conductive type formed entirely on the body region of the second conductive type and
a second part of the first semiconductor region of the first conductive type formed partially on the body region of the second conductive type, wherein
the first part of the first semiconductor region of the first conductive type and the channel region of the second conductive type define a first boundary surface, and
the second part of the first semiconductor region of the first conductive type and the channel region of the second conductive type define a second boundary surface,
the channel region of the second conductive type having lower impurity
concentration than that of the body region of the second conductive type;
a second semiconductor region of a first conductive type formed toward the body region of the second conductive type from the surface of the epitaxial layer of the first conductive type, the second semiconductor region of the first conductive type having higher impurity concentration than that of the first semiconductor region of the first conductive type,
a body contact region of a second conductive type formed such that the body contact region of the second conductive type penetrates the first semiconductor region of the first conductive type from the surface of the epitaxial layer of the first conductive type and reaches the body region of the second conductive type, the body contact region of the second conductive type having higher impurity concentration than that of the body region of the second conductive type; and
a gate electrode formed on at least the channel region of the second conductive type with a gate insulating film interposed therebetween, wherein
the channel region of the second conductive type and the second semiconductor region of the first conductive type are formed at a planar position where the first part of the first semiconductor region of the first conductive type remains between the channel region of the second conductive type and the second semiconductor region of the first conductive type and separates the channel region of the second conductive type from the second semiconductor region of the first conductive type, and
the second boundary surface is positioned on the body region of the second conductive type as viewed in a plan view.

US Pat. No. 10,475,917

MOSFET

SHINDENGEN ELECTRIC MANUF...

1. A MOSFET used in a power conversion circuit which includes a power source and the MOSFET for controlling an electric current supplied from the power source, whereinthe MOSFET includes a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure,
a total amount of a dopant in the p-type column region is set to a value which falls within a range of 1.00 to 1.03 times as much as a total amount of a dopant in the n-type column region, and
the MOSFET is configured to be operated during a period from a point of time when a drain current starts to decrease to a point of time when the drain current becomes 0 for the first time in response to turning off of the MOSFET such that a first period during which the drain current is decreased, a second period during which the drain current is increased or the drain current becomes constant, and a third period during which the drain current is decreased again occur in this order.

US Pat. No. 10,707,302

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device manufacturing method comprising:a semiconductor substrate preparing step of preparing a semiconductor substrate having an exposed surface where a pn junction is exposed, the pn junction being formed at a junction portion between a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type opposite to the first conductivity type, the exposed surface having
a first exposed region where the first semiconductor layer is exposed, and
a second exposed region where the second semiconductor layer is exposed;
a pretreatment step of performing a hydrophobic treatment only on the first exposed region of the exposed surface;
an impurity supplying step of supplying an impurity of the first conductivity type to the first exposed region;
a channel stopper forming step of irradiating the first exposed region with a laser beam to introduce the impurity of the first conductivity type into the first semiconductor layer, thus forming a channel stopper; and
a glass layer forming step of forming a glass layer using a glass composition so as to cover the exposed surface.

US Pat. No. 10,606,252

CONTROL DEVICE INCLUDING ONE MICROCOMPUTER FOR CONTROLLING A MOTOR VEHICLE WHICH MAY IMMEDIATELY STOP ROTATIONS OF THE MOTOR WHEN AN ABNORMAL CONDITION OCCURS

SHINDENGEN ELECTRIC MANUF...

1. A control device comprising:a power supply circuit configured to output a voltage based on a battery voltage outputted from a battery;
a motor driving circuit configured to drive a motor by the voltage outputted from the power supply circuit;
a switch connected between the power supply circuit and the motor driving circuit, turned on to supply the voltage outputted from the power supply circuit to the motor driving circuit, and turned off to stop supplying the voltage outputted from the power supply circuit to the motor driving circuit;
a microcomputer including a first processing unit that outputs a motor control signal for driving the motor to the motor driving circuit and a switch control signal for turning on or off the switch, and a second processing unit that carries out a mathematical operation corresponding to a mathematical operation carried out by the first processing unit, the microcomputer being configured to output an error signal based on an operation result of the first processing unit and an operation result of the second processing unit; and
a system power supply IC configured to operate based on the voltage outputted from the power supply circuit, supply to the microcomputer the voltage for operating the microcomputer, monitor whether an abnormal condition occurs to the microcomputer, and output a reset signal for resetting the microcomputer to the microcomputer when detecting the abnormal condition of the microcomputer,
wherein:
the system power supply IC outputs a switch opening signal for forcibly turning off the switch regardless of whether the switch control signal is outputted from the microcomputer when detecting the abnormal condition of the microcomputer, and
the switch stops supplying the voltage outputted from the power supply circuit to the motor driving circuit based on the switch opening signal,
wherein:
the system power supply IC outputs a motor brake signal for applying a brake on the motor when detecting the abnormal condition of the microcomputer, and
the motor driving circuit applies a brake on the motor in response to the motor brake signal,
wherein the system power supply IC detects the abnormal condition of the microcomputer by at least one of a termination of output of a watchdog pulse signal from the microcomputer, an output of a response that has a value different from an expected value from the microcomputer during a communication with the microcomputer, and an output of the error signal from the microcomputer,
wherein:
the microcomputer restarts in response to the reset signal,
after the restart, the microcomputer reads, from the system power supply IC through a communication, an error status relating to the abnormal condition of the microcomputer detected by the system power supply IC,
the microcomputer determines which abnormal condition occurs based on the error status that is read, and
the microcomputer performs a latch-stop operation when the abnormal condition that is determined relates to an inside of the control device, and
wherein the system power supply IC outputs the reset signal to the microcomputer, and outputs the switch opening signal when detecting the abnormal condition of the microcomputer.

US Pat. No. 10,600,725

SEMICONDUCTOR MODULE HAVING A GROOVED CLIP FRAME

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor module comprising:a die pad frame;
a semiconductor chip disposed in a chip region on an upper surface of the die pad frame, the semiconductor chip having an upper surface on which a first electrode is disposed and a lower surface on which a second electrode is disposed;
a conductive connection member for die pad disposed between the second electrode of the semiconductor chip and the upper surface of the die pad frame, the conductive connection member for die pad electrically connecting the second electrode of the semiconductor chip and the upper surface of the die pad frame;
a first clip frame disposed on the upper surface of the semiconductor chip;
a first clip conductive connection member disposed between the first electrode on the semiconductor chip and a lower surface of the first clip frame, the first clip conductive connection member electrically connecting the first electrode of the semiconductor chip and the lower surface of the first clip frame; and
a sealing resin for sealing the semiconductor chip, the die pad frame, the first clip frame, the first clip conductive connection member, and the conductive connection member for die pad,
wherein a clip locking part is disposed at an end portion of an upper surface of the first clip frame, the clip locking part being partially above the upper surface of the first clip frame so as to be away from the upper surface of the semiconductor chip, and
wherein a groove is formed on a lower surface of the clip locking part.

US Pat. No. 10,424,578

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Shindengen Electric Manuf...

1. A semiconductor device, comprising:a conductive semiconductor substrate;
a first insulating film formed on the semiconductor substrate;
a Zener diode that is formed on the first insulating film and includes an n-type semiconductor layer and a p-type semiconductor layer arranged adjacent to each other; and
a second insulating film that covers the Zener diode,
a concentration of the p-type impurities in the p-type semiconductor layer being lower than a concentration of the n-type impurities in the n-type semiconductor layer,
a concentration peak of the p-type impurities being located in a non-boundary region between a first boundary region that is a boundary region of the p-type semiconductor layer with the first insulating film and a second boundary region that is a boundary region of the p-type semiconductor layer with the second insulating film, and
n-type impurities are implanted in the first boundary region of the p-type semiconductor layer.

US Pat. No. 10,403,497

METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a silicon carbide semiconductor device comprising, in the following order:a silicon carbide semiconductor base body preparation step of preparing a silicon carbide semiconductor base body having a first main surface which is an element forming surface and a second main surface which is a surface on a side opposite to the first main surface;
a polishing step of polishing the silicon carbide semiconductor base body from a second main surface side;
a thin metal film forming step of forming a thin metal film made of at least one metal capable of forming a metal carbide on the second main surface of the silicon carbide semiconductor base body, said at least one metal including Ti;
a laser beam irradiating step of irradiating a laser beam which falls within a visible region or within an infrared region to the thin metal film so as to heat the thin metal film thus forming a metal carbide on a boundary face between the silicon carbide semiconductor base body and the thin metal film,
wherein the laser beam irradiating step is started under a condition that an amount of a laser beam which arrives at a depth position of 50 nm from a boundary face between the silicon carbide semiconductor base body and the thin metal film is 10% or less;
an etching step of removing by etching a metal containing byproduct layer formed on a surface side of the metal carbide by a non-oxidizing chemical solution thus exposing a surface of the metal carbide; and
an electrode layer forming step of forming an electrode layer on the metal carbide wherein
the metal containing byproduct layer contains Ti and TiSix, and
the etching step further removes Ti and TiSix.

US Pat. No. 10,714,346

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device comprising in a following order:a MOS structure forming step where a gate electrode is formed on a first main surface side of a semiconductor base substrate with a gate insulation film interposed therebetween and, thereafter, an interlayer insulation film is formed so as to cover the gate electrode;
a metal layer forming step where a metal layer in a state of being connected with the gate electrode is formed over the interlayer insulation film;
an electron beam irradiating step where a lattice defect is formed in the inside of the semiconductor base substrate by irradiating an electron beam to the semiconductor base substrate from the first main surface side or a second main surface side in a state where the metal layer is set to a ground potential;
a metal layer dividing step where the metal layer is divided into a plurality of electrodes; and
an annealing step where the lattice defect in the semiconductor base substrate is repaired by heating the semiconductor base substrate.

US Pat. No. 10,601,308

POWER FACTOR IMPROVING CONVERTER, AND POWER SUPPLY DEVICE INCLUDING POWER FACTOR IMPROVING CONVERTER

SHINDENGEN ELECTRIC MANUF...

6. A power supply device comprising:a plurality of converters each comprising
transformer including a winding at a primary side and a secondary winding at a secondary side different from the primary side,
a bridge circuit at the primary side comprising
a first series circuit including first and second switching elements directly connected in series, a first direct connection point of the first and second switching elements being connected directly to one end of the primary winding,
a second series circuit including third and fourth switching elements directly connected in series, a second direct connection point of the third and fourth switching elements being connected directly to another end of the primary winding,
a first output terminal connected to a first end of the first series circuit and a first end of the second series circuit, and
a second output terminal connected to a second end of the first series circuit and a second end of the second series circuit, and
a rectifying circuit at the secondary side comprising
a third series circuit including first and second rectifying elements directly connected in series, a third direct connection point of the first and second rectifying elements being connected directly to one end of the secondary winding,
a fourth series circuit including third and fourth rectifying elements directly connected in series, a fourth direct connection point of the third and fourth rectifying elements being connected directly to another end of the secondary winding, and
a first capacitor connected in parallel to the third series circuit and the fourth series circuit, and
a load having
a first end connected to a first end of the third series circuit of each of the plurality of converters, a first end of the fourth series circuit of each of the plurality of converters, and a first end of the first capacitor of each of the plurality of converters, and
a second end connected to a second end of the third series circuit of each of the plurality of converters, a second end of the fourth series circuit of each of the plurality of converters, and a second end of the first capacitor of each of the plurality of converters.

US Pat. No. 10,366,976

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device, comprising:a semiconductor switch that includes a first main electrode connected to a high potential, a second main electrode connected to a low potential, and a control electrode;
a first Zener diode configured to include one end electrically connected to the first main electrode, another end electrically connected to the control electrode, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other; and
a second Zener diode configured to include one end electrically connected to the control electrode, and another end electrically connected to the second main electrode, and n-type semiconductor layers and p-type semiconductor layers alternately arranged adjacent to each other, wherein
junction areas between the n-type semiconductor layers and the p-type semiconductor layers included in the first Zener diode are smaller than junction areas between the n-type semiconductor layers and the p-type semiconductor layers included in the second Zener diode.

US Pat. No. 10,333,303

POWER SUPPLY DEVICE AND METHOD OF CONTROLLING POWER SUPPLY DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power supply device, comprising:an output circuit configured to be supplied with electric power from a power supply, and to output a current;
a driving circuit configured to control an output operation of the output circuit for outputting the current;
an overcurrent detection circuit configured to output a detection signal to a first node when detecting an overcurrent in the output circuit;
an off-state fixing circuit configured to output, based on the detection signal inputted to the first node, an off-state fixing signal for performing a forcible suspension of the output operation of the output circuit from an output node to the driving circuit, regardless of whether a control signal is outputted; and
a control unit configured to receive the detection signal, and to output the control signal for controlling the output operation of the output circuit to the driving circuit for controlling the output operation of the output circuit by means of the driving circuit,
wherein, in response to the off-state fixing signal, the driving circuit performs the forcible suspension of the output operation of the output circuit regardless of whether the control signal is outputted,
wherein the control unit outputs a cancellation signal for cancelling the forcible suspension of the output operation of the output circuit to the off-state fixing circuit after an off period passes from time when the detection signal is inputted,
wherein, in response to the cancellation signal, the off-state fixing circuit stops outputting the off-state fixing signal to cause the driving circuit to return to a normal operation for controlling the output operation of the output circuit based on the control signal,
wherein the off-state fixing circuit:
outputs the detection signal inputted to the first node to the driving circuit as the off-state fixing signal, and
thereafter, controls a potential at the first node to stop outputting the off-state fixing signal in response to the cancellation signal inputted,
wherein the overcurrent detection circuit does not output the detection signal to the first node when no overcurrent caused by the output operation of the output circuit is detected,
wherein the control unit outputs the control signal for controlling the output operation of the output circuit to the driving circuit in Carder to control the output operation of the output circuit by means of the driving circuit when the detection signal is not inputted after the cancellation signal is outputted,
wherein the output node is connected to the first node,
wherein the off-state fixing circuit includes:
a first control resistor having an end that is connected to the power supply, and another end that is connected to the first node,
a second control resistor having an end that is connected to the power supply,
a capacitor having an end that is connected to the first node, and another end that is connected to a fixed potential,
a PNP-type bipolar transistor having an emitter that is connected to the first node, another end that is connected to the fixed potential, and a base that is connected to another end of the second control resistor, and
an NPN-type bipolar transistor having a collector that is connected to the other end of the second control resistor, an emitter that is connected to the fixed potential, and a base to which the cancellation signal from the control unit is inputted, and
wherein the off-state fixing circuit outputs a signal that is based on the potential at the first node to the driving circuit as the off-state fixing signal, in response to the detection signal outputted from the overcurrent detection circuit, and stops outputting the off-state fixing signal to the driving circuit in response to the cancellation signal outputted from the control unit.

US Pat. No. 10,480,475

STARTING POWER GENERATION APPARATUS AND STARTING POWER GENERATION METHOD

SHINDENGEN ELECTRIC MANUF...

1. A starting power generation apparatus comprising:a starter generator including
a field portion having a permanent magnet, and
an armature unit including a first multi-phase winding and a second multi-phase winding which are arranged in parallel;
a first power conversion unit including a first positive-side DC terminal connected to a battery and a plurality of first AC terminals connected to the first multi-phase winding, the first power conversion unit being configured to convert a power bidirectionally between DC and AC;
a second power conversion unit including a plurality of second AC terminals connected to the second multi-phase winding, the second power conversion unit being configured to control a current to be input and output via the second AC terminals; and
a control unit configured to
detect a positional relationship between the field portion and the armature unit based on an output voltage of the second multi-phase winding, and
control the first power conversion unit and the second power conversion unit in accordance with the positional relationship detected,
wherein the control unit is configured to detect the positional relationship when the starter generator is stopped, based on time widths of two or more predetermined voltages generated in two or more windings constituting the second multi-phase winding in a case that an output voltage of the battery is applied to the first multi-phase winding for a predetermined time in a state where current input and output via the second AC terminals is off.

US Pat. No. 10,491,083

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MOUNTING METHOD

Shindengen Electric Manuf...

1. A semiconductor device comprising:a device main body that is semi-annular in plan view, the device main body having at least an inner circumferential side surface that is arcuate in plan view, an outer circumferential side surface that is arcuate in plan view, a first radial side surface, and a second radial side surface, the device main body having first to fourth corner portions, the first corner portion being defined by the first radial side surface and the outer circumferential side surface, the second corner portion being defined by the first radial side surface and the inner circumferential side surface, the third corner portion being defined by the second radial side surface and the outer circumferential side surface, and the fourth corner portion being defined by the second radial side surface and the inner circumferential side surface, wherein
at least one of the first and second corner portions and at least one of the third and fourth corner portions have cutout portions each having
a flat side surface extending radially from the outer or inner circumferential side surface, and
a curved side surface extending arcuately and connecting the flat side surface and the first or second radial side surface,
the flat side surface is parallel, and not aligned, with the first or second radial side surface, and
the semiconductor device is configured to be arranged adjacent to another same-structured semiconductor device to form an annular shape in plan view, so that the two mutually-facing same-shaped adjacent cutout portions of the two semiconductor devices form a single screw hole into which a screw is fitted to fix the device main bodies of the two semiconductor devices to a base portion of an electric motor.

US Pat. No. 10,468,518

POWER SEMICONDUCTOR DEVICE HAVING A FIRST AND A SECOND CONDUCTIVE-TYPE COLUMNAR REGIONS FORMED ALTERNATELY WITH EACH OTHER AND METHOD OF MANUFACTURING THE POWER SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power semiconductor device comprising:a semiconductor base body having:
a low resistance semiconductor layer;
a first conductive-type semiconductor layer formed on the low resistance semiconductor layer and having lower dopant concentration than the low resistance semiconductor layer;
a plurality of second conductive-type column trenches arranged on a surface of the first conductive-type semiconductor layer along a predetermined direction;
a plurality of second conductive-type columnar regions formed of an epitaxial regions of a second conductive-type semiconductor material formed in the second conductive-type column trenches;
second conductive-type base regions formed on surfaces of the first conductive-type semiconductor layer and the plurality of second conductive-type columnar regions; and
first conductive-type high concentration diffusion regions formed on surfaces of the base regions at predetermined positions, wherein
regions sandwiched between the plurality of second conductive-type column trenches disposed adjacently to each other in the first conductive-type semiconductor layer forms a plurality of first conductive-type columnar regions,
the plurality of first conductive-type columnar regions and the plurality of second conductive-type columnar regions are alternately formed along a predetermined direction, and
a super junction structure is formed of the plurality of first conductive-type columnar regions and the plurality of second conductive-type columnar regions;
a plurality of trenches formed within regions where the first conductive-type columnar regions are formed as viewed in a plan view, the trenches being formed such that the trenches penetrate the base regions and extend to a depth position where the trenches reach the first conductive-type columnar regions, the trenches allowing portions of the first conductive-type high concentration diffusion regions to be exposed on respective inner peripheral surfaces of the respective trenches;
gate insulation films each of which is formed on the inner peripheral surface of each trench;
gate electrodes each of which is embedded in each trench by way of the gate insulation film;
an interlayer insulation film formed so as to cover the base regions, the first conductive-type high concentration diffusion regions, the gate insulation films and the gate electrodes;
contact holes formed such that the contact holes penetrate the interlayer insulation film and reach at least the base regions, two or more contact holes being formed between each two trenches disposed adjacently to each other;
metal plugs formed by filling the inside of the contact holes with metal; and
an electrode formed on the interlayer insulation film, the electrode being electrically connected with the base regions and the first conductive-type high concentration diffusion regions through the metal plugs, wherein
the semiconductor base body further comprises second conductive-type high concentration diffusion regions which are brought into contact with bottom surfaces of the metal plugs, are electrically connected with the electrode through the metal plugs, and have higher dopant concentration than the base region, and
in the semiconductor base body, the first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between two trenches disposed adjacently to each other,
wherein the plurality of second conductive-type columnar regions is formed in the entire interior of and fills the entirety of each of the second conductive-type column trenches.

US Pat. No. 10,453,779

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a seal portion;
a first electronic element disposed in the seal portion, a first electrode being disposed on a top surface of the first electronic element;
a first lead terminal having one end, on a top surface of which the first electronic element is disposed within the seal portion, and another end that is exposed from one end of the seal portion, the one end of the seal portion being along a longitudinal direction;
a second lead terminal having one end that is disposed to be close to the one end of the first lead terminal within the seal portion, and another end that is exposed from another end of the seal portion, the other end of the seal portion being along the longitudinal direction;
a first connecting element disposed within the seal portion, and having one end that is electrically connected to the first electrode disposed on the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and
a conductive bonding agent for joining together the other end of the first connecting element and the one end of the second lead terminal in a conductive manner,
wherein a wall portion protrudes from a top surface of the one end of the second lead terminal for blocking the conductive bonding agent that is melt during joining of the other end of the first connecting element and the one end of the second lead terminal,
wherein:
a width of the one end of the first connecting element is narrower than a width of the other end of the first connecting element, and the width of the other end of the first connecting element is narrower than a width of the one end of the second lead terminal, and
a first side surface extending from the one end to the other end of the first connecting element is parallel to an extending direction along which the one end of the second lead terminal extends,
wherein the semiconductor device further comprises:
a second electronic element disposed within the seal portion, a third electrode being disposed on a top surface the second electronic element;
a third lead terminal having a one end, on a top surface of which the second electronic element is disposed within the seal portion, and another end that is exposed from the other end of the seal portion, the other end of the seal position being along the longitudinal direction; and
a second connecting element disposed within the seal portion, and having one end that is electrically connected to the second electrode disposed on the top surface of the first electronic element, and another end that is electrically connected to the one end of the third lead terminal, the second connecting element extending in the extending direction, and
wherein the second connecting element is disposed to be adjacent to the first connecting element so that a side surface extending in the extending direction along which the second connecting element extends faces the first side surface of the first connecting element.

US Pat. No. 10,453,781

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a plurality of first conductor portions, having a first terminal, a first main body portion being integrated with the first terminal and a first electronic element being provided on the first main body portion;
a plurality of second conductor portions, having a second terminal, a second main body portion being is integrated with the second terminal and a second electronic element being provided on the second main body portion; and
a sealing portion, covering upper surface of the first conductor portion and the second conductor portion,
wherein the first conductor portion and the second conductor portion are connected, and
wherein usage mode of the first terminal and the second terminal can be selected by changing connection aspect of the first conductor portion and the second conductor portion, and the second terminal serves as an output terminal in a case where the first terminal is used as a power supply terminal and the first terminal serves as an output terminal in a case where the second terminal is used as a power supply terminal, and
wherein a part of the first main body portion and a part of the second main body portion are exposed from the sealing portion, and an area of the part, exposed from the sealing portion, of the first main body portion and an area of the part, exposed from the sealing portion, of the second main body portion are substantially the same when viewed from back surface.

US Pat. No. 10,438,872

SEMICONDUCTOR DEVICE AND LEAD FRAME

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a device main body having a first main surface, a second main surface, a first side surface, and a second side surface, the second main surface opposing the first main surface, and the second side surface opposing the first side surface in a short-side direction of the first main surface;
a single power supply wiring board having plural pairs of narrow portions and wide portions connected alternately in a long-side direction of the first main surface, the wide portions protruding toward a side of the first side surface with respect to the narrow portions;
a plurality of output wiring boards arranged in the long-side direction along the power supply wiring board, the output wiring boards being equal in quantity to the pairs of narrow portions and wide portions of the power supply wiring board, each of the output wiring boards having a narrow portion and a wide portion connected in the long-side direction, the wide portion protruding toward a side of the second side surface with respect to the narrow portion; and
a plurality of semiconductor elements each disposed on a different one of the wide portions of the power supply wiring board and the wide portions of the output wiring boards,
wherein in the long-side direction, the narrow portion of one of any two adjacent output wiring boards faces the wide portion of another one of the any two adjacent output wiring boards,
in the short-side direction, the narrow portion and the wide portion of each of the output wiring boards respectively face the wide portion and the narrow portion, in a single pair, of the power supply wiring board,
in the long-side direction, a width of each of the output wiring boards is smaller than a sum of widths of the narrow portion and the wide portion, in a single pair, of the power supply wiring board,
the wide portions of the single power supply wiring board respectively protrude in the short-side direction away from the narrow portions of the output wiring boards, and
the wide portions of the output wiring boards respectively protrude in the short-side direction away from the narrow portions of the single power supply wiring board.

US Pat. No. 10,692,810

SEMICONDUCTOR MODULE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor module comprising:a first electronic device in which one terminal is connected to a first wiring line, the other terminal is connected to a second wiring line, and a first device current flows in a first current direction from the first wiring line to the second wiring line;
a second electronic device in which one terminal is connected to a third wiring line, the other terminal is connected to a fourth wiring line, and a second device current flows in a second current direction from the third wiring line to the fourth wiring line;
a regulation wiring line in which a regulation current that is different from the first device current and the second device current flows;
a third electronic device in which one terminal is connected to a fifth wiring line, the other terminal is connected to a sixth wiring line, and a third device current flows in a third current direction from the fifth wiring line to the sixth wiring line; and
a fourth electronic device in which one terminal is connected to a seventh wiring line, the other terminal is connected to a eighth wiring line, and a fourth device current flows in a fourth current direction from the seventh wiring line to the eighth wiring line,
wherein:
the first electronic device and the second electronic device are arranged so that at least part of a first magnetic flux generated by the first device current flowing in the first current direction cancels at least part of a second magnetic flux generated by the second device current flowing in the second current direction to reduce mutual inductance;
the third electronic device and the fourth electronic device are arranged so that at least part of a third magnetic flux generated by the third device current flowing in the third current direction cancels at least part of a fourth magnetic flux generated by the fourth device current flowing in the fourth current direction to reduce mutual inductance;
the regulation wiring line is arranged so that at least part of a magnetic flux generated by the regulation current flowing in the regulation wiring line cancels at least part of the first magnetic flux to reduce mutual inductance;
the first current direction in which the first device current flows and the second current direction in which the second device current flows are parallel to each other, and a value of the first device current is the same as a value of the second device current;
the first electronic device is a first switching device in which one terminal is connected to a first power supply terminal and the other terminal is connected to a first output terminal;
the second electronic device is a second switching device in which one terminal is connected to a second output terminal and the other terminal is connected to a second power supply terminal, the second electronic device being controlled to be turned on or off in synchronization with the first switching device;
the third electronic device is a third switching device in which one terminal is connected to the first output terminal and the other terminal is connected to the second power supply terminal;
the fourth electronic device is a fourth switching device in which one terminal is connected to the first power supply terminal and the other terminal is connected to the second output terminal, the fourth electronic device being controlled to be turned on or off in synchronization with the third switching device; and
the first switching device and the third switching device are controlled to be complementarily turned on or off.

US Pat. No. 10,510,841

METHOD OF MANUFACTURING A SILICON CARBIDE SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a silicon carbide semiconductor device comprising:an epitaxial layer of a first conductive type;
a first semiconductor region of a first conductive type formed on a surface of the epitaxial layer of the first conductive type, and having higher impurity concentration than that of the epitaxial layer of the first conductive type;
a body region of a second conductive type formed at a position deeper than that of the first semiconductor region of the first conductive type;
a channel region of a second conductive type formed such that
the channel region of the second conductive type
penetrates the first semiconductor region of the first conductive type from a surface of the epitaxial layer of the first conductive type,
reaches the body region of the second conductive type, and
defines
a first part of the first semiconductor region of the first conductive type formed entirely on the body region of the second conductive type and
a second part of the first semiconductor region of the first conductive type formed partially on the body region of the second conductive type, wherein
the first part of the first semiconductor region of the first conductive type and the channel region of the second conductive type define a first boundary surface, and
the second part of the first semiconductor region of the first conductive type and the channel region of the second conductive type define a second boundary surface,
the channel region of the second conductive type having lower impurity concentration than that of the body region of the second conductive type;
a second semiconductor region of a first conductive type formed toward the body region of the second conductive type from the surface of the epitaxial layer of the first conductive type, the second semiconductor region of the first conductive type having higher impurity concentration than that of the first semiconductor region of the first conductive type;
a body contact region of a second conductive type formed such that the body contact region of the second conductive type penetrates the first semiconductor region of the first conductive type from the surface of the epitaxial layer of the first conductive type and reaches the body region of the second conductive type, the body contact region of the second conductive type having higher impurity concentration than that of the body region of the second conductive type; and
a gate electrode formed on at least the channel region of the second conductive type with a gate insulating film interposed therebetween, wherein
the channel region of the second conductive type and the second semiconductor region of the first conductive type are formed at a planar position where the first part of the first semiconductor region of the first conductive type
remains between the channel region of the second conductive type and the second semiconductor region of the first conductive type, and
separates the channel region of the second conductive type from the second semiconductor region of the first conductive type, and
the second boundary surface is positioned on the body region of the second conductive type as viewed in a plan view, wherein the method comprising the steps of:
preparing a silicon carbide semiconductor substrate provided with the epitaxial layer of the first conductive type;
forming the body region of the second conductive type on the surface of the epitaxial layer of the first conductive type such that a depth where a maximum concentration of an impurity of a second conductive type is deeper than a depth position of a bottom surface of the channel region;
forming the first semiconductor region of the first conductive type on a surface of the body region of the second conductive type;
forming the channel region of the second conductive type, the second semiconductor region of the first conductive type and a body contact region of a second conductive type in the first semiconductor region of the first conductive type, the body contact region of the second conductive type penetrating the first semiconductor region of the first conductive type from the surface of the epitaxial layer of the first conductive type and reaches the body region of the second conductive type; and
forming the gate electrode on at least the channel region of the second conductive type with a gate insulating film interposed therebetween, wherein
in the step of forming the channel region of the second conductive type, the second semiconductor region of the first conductive type and the body contact region of the second conductive type, the channel region of the second conductive type, the second semiconductor region of the first conductive type and the body contact region of the second conductive type are formed at a planar position where the first part of the first semiconductor region of the first conductive type remains between the channel region of the second conductive type and the second semiconductor region of the first conductive type, and
the second boundary surface is positioned on the body region of the second conductive type as viewed in a plan view.

US Pat. No. 10,410,784

MAGNETIC COMPONENT

SHINDENGEN ELECTRIC MANUF...

1. A magnetic component comprising:a core provided with a leg;
wherein a coil structure having a coil including conductors wrapped around the leg, and two or more radiative insulating sheets provided between the conductors; and
wherein a radiator brought into contact with an end surface of the core, and extending toward the radiative insulating sheets and brought into contact with the surface of the radiative insulating sheets;
wherein the two or more radiative insulating sheets have a first radiative insulating sheet, and a second radiative insulating sheet having an area in a surface direction larger than an area of the first radiative insulating sheet,
wherein the first radiative insulating sheet is disposed in a position closer to the radiator than the second radiative insulating sheet, and
wherein the radiator is brought into contact with the surfaces of the first radiative insulating sheet and the second radiative insulating sheet.

US Pat. No. 10,361,184

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device with principal current flowing from one principal surface to another principal surface of a semiconductor substrate,wherein the one principal surface of the semiconductor substrate includes an active region, and a voltage supporting region that surrounds the active region and contains a peripheral portion of the semiconductor substrate, and
the semiconductor device comprises:
a first insulating film formed on the voltage supporting region;
an overvoltage protection diode that includes an n-type semiconductor layer and a p-type semiconductor layer that are alternately arranged on the first insulating film in a manner adjacent to each other;
a gate electrode formed on the overvoltage protection diode;
a stopper region formed on the one principal surface at a side end of the semiconductor substrate;
a stopper electrode formed on the stopper region and electrically connected to one end of the overvoltage protection diode;
a plurality of conductor portions that are formed on the first insulating film, and are electrically connected to the overvoltage protection diode;
a second insulating film that covers the overvoltage protection diode and the conductor portions; and
a high-potential portion provided above the overvoltage protection diode with the second insulating film intervening therebetween, the high-potential portion being provided between the gate electrode and the stopper electrode,
a p-type impurity concentration of the p-type semiconductor layer is lower than an n-type impurity concentration of the n-type semiconductor layer, and
the high-potential portion has a higher potential than a potential of the p-type semiconductor layer disposed immediately under the high-potential portion in an inversely biased application state,
wherein the high-potential portion is electrically connected to a first conductor portion of the conductor portions via a conductive connector formed on the second insulating film,
wherein the conductive connector has one end electrically connected to the high-potential portion, and another end electrically connected to the first conductor portion.

US Pat. No. 10,700,191

MOSFET AND POWER CONVERSION CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. A MOSFET used in a power conversion circuit which includes at least: a reactor; a power source which supplies an electric current to the reactor; the MOSFET for controlling an electric current supplied from the power source to the reactor; and a rectifier element which performs a rectifying operation of the electric current supplied from the power source to the reactor or an electric current from the reactor, whereinthe MOSFET comprises a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure,
the n-type column region and the p-type column region are formed such that a total amount of a dopant in the p-type column region is set higher than a total amount of a dopant in the n-type column region, and
the MOSFET is configured to be operated in response to turning on of the MOSFET such that at a center of the n-type column region as viewed in a plan view, a low electric field region having lower field intensity than areas of the n-type column region other than the center of the n-type column region appears.

US Pat. No. 10,355,628

STARTING POWER GENERATION APPARATUS AND STARTING POWER GENERATION METHOD

SHINDENGEN ELECTRIC MANUF...

1. A starting power generation apparatus comprising:a starter generator including
a field portion having a permanent magnet, and
an armature unit including a first multi-phase winding and a second multi-phase winding which are arranged in parallel;
a first power conversion unit including a first positive-side DC terminal connected to a battery and a plurality of first AC terminals connected to the first multi-phase winding, the first power conversion unit being configured to convert a power bidirectionally between DC and AC;
a second power conversion unit including a plurality of second AC terminals connected to the second multi-phase winding, the second power conversion unit being configured to control a current to be input and output via the second AC terminals; and
a control unit configured to
detect a positional relationship between the field portion and the armature unit based on an output voltage of the second multi-phase winding, and
control the first power conversion unit and the second power conversion unit in accordance with the positional relationship detected,
wherein the control unit is configured to
when an engine is started, energize only one winding of the first multi-phase winding and the second multi-phase winding according to a plurality of conduction patterns, and compare voltages induced in an other winding of the first multi-phase winding and the second multi-phase winding among the plurality of conduction patterns, thereby detecting the positional relationship,
after energization is started, energize the first multi-phase winding and the second multi-phase winding until starting of the engine is completed, based on the positional relationship derived from a zero-cross point of the other winding, and
after the starting of the engine is completed, de-energize the other winding and detect the positional relationship from a zero-cross point of a no-load voltage to be generated at both ends of the other winding.

US Pat. No. 10,957,630

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a circuit unit including a semiconductor chip;
a plurality of pin terminals formed in a rod shape extending in a same direction from the circuit unit and electrically connected to the circuit unit;
a sealing resin portion sealing the circuit unit and first portions of the plurality of pin terminals positioned on a side of the circuit unit; and
a plurality of covering resin portions integrally extending from an outer surface of the sealing resin portion from which second portions of the plurality of pin terminals protrude, the plurality of covering resin portions being formed in a cylindrical shape respectively covering base end portions of the second portions of the plurality of pin terminals, which are positioned on a side of the sealing resin portion, wherein
each of tip end portions of the second portions of the plurality of pin terminals has a pair of recessed portions in a region adjacent to the covering resin portion, the pair of recessed portions being recessed inward from an outer circumference of the tip end portion.

US Pat. No. 10,770,882

POWER MODULE

SHINDENGEN ELECTRIC MANUF...

1. A power module wherein a package houses therein:a current input terminal and a current output terminal;
a power semiconductor device used for a switching purpose to conduct/interrupt a current, which flows from the current input terminal to the current output terminal, according to a switching signal;
a resistor for detecting an operation state of the power semiconductor device; and
a switch for a current-interrupting purpose that is connected in series to the power semiconductor device,
wherein the power semiconductor device, the switch and the resistor are in series connected between the current input terminal and the current output terminal,
one end of the power semiconductor device is connected to the current input terminal, and the other end of the power semiconductor device is connected to the switch at a connection point for connecting the power semiconductor device and the switch to each other,
one end of the switch is connected to the connection point and the other point of the switch is connected to one end of the resistor,
the other end of the resistor is connected to the current output terminal, and
the switch is configured to, in response to a control signal generated on a basis of a voltage between the one end of the switch and the other end of the resistor, go into a conduction state so as to conduct a current flowing in the power semiconductor device during a normal operation of the power semiconductor device and to go into an interruption state so as to interrupt the current flowing in the power semiconductor device when a short-circuit failure has occurred in the power semiconductor device.

US Pat. No. 10,707,343

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device having a shield gate structure where a gate electrode and a shield electrode are separated from each other in an in-plane direction, the method comprising in the following order:a semiconductor base body preparing step of preparing a semiconductor base body having a first conductive-type first semiconductor layer and a first conductive-type second semiconductor layer having lower concentration than the first semiconductor layer;
a first trench forming step of forming a predetermined first trench on the second semiconductor layer;
a first insulation film forming step of forming a first insulation film such that the first insulation film is filled in a lower portion of the first trench;
a gate insulation film forming step of forming a gate insulation film on a side wall of an upper portion of the first trench;
a gate electrode forming step of forming the gate electrode made of polysilicon with the gate insulation film interposed between the upper portion of the first trench and the gate electrode;
a second trench forming step of forming a second trench in the inside of the first trench by removing a center portion of the first insulation film by etching;
a second insulation film forming step of forming a second insulation film in at least the inside of the second trench under a condition that a gap remain in the inside of the second trench;
a shield electrode forming step of forming the shield electrode in the inside of the gap; and
a source electrode forming step of forming a source electrode such that the source electrode is electrically connected to the shield electrode.

US Pat. No. 10,461,659

SEMICONDUCTOR DEVICE AND POWER CONVERTING DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device configured to convert an inputted voltage and output a converted voltage, comprising:a module substrate;
a first input wiring line disposed on a top surface of the module substrate and including a first portion that extends along a first side of the module substrate and a second portion that extends along a second side, which is adjacent to the first side, the second portion having one end that is connected to one end of the first portion;
a first input terminal disposed on another end of the second portion and electrically connected to the first input wiring line;
a first transistor disposed on the first portion so as to be on a side of the one end of the first portion;
a second transistor disposed on the first portion so as to be on a side of another end of the first portion;
a first power wiring line disposed in a first substrate region that is closer to a central region of the top surface of the module substrate than the first input wiring line, the first power wiring line being adjacent to the one end of the first portion and the second portion of the first input wiring line;
a second power wiring line disposed in a second substrate region that is closer to the central region on the top surface of the module substrate than the first input wiring line, the second power wiring line being adjacent to the first substrate region on a side of a third side that is opposite to the second side;
a third transistor disposed on the first power wiring line;
a fourth transistor disposed on the second power wiring line;
a first output terminal disposed on the first power wiring line and electrically connected to the first power wiring line;
a second output terminal disposed on the second power wiring line and electrically connected to the second power wiring line;
a second input wiring line disposed on the top surface of the module substrate so as to be close to a fourth side that is opposite to the first side and adjacent to the second side of the module substrate;
a second input terminal disposed on the second input wiring line and electrically connected to the second input wiring line;
a module sealing member configured to seal the top surface of the module substrate;
a first control wiring line disposed on the top surface of the module substrate, and having one end that is connected to a control electrode of the first transistor;
a second control wiring line disposed on the top surface of the module substrate, and having one end that is connected to a control electrode of the second transistor;
a first control terminal disposed on another end of the first control wiring line so as to be closer to the second side than the first transistor, and electrically connected to the first control wiring line; and
a second control terminal disposed on another end of the second control wiring line so as to be closer to the third side than the second transistor, and electrically connected to the second control wiring line.

US Pat. No. 10,461,062

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a first board having a first electrically conducting layer and a first electronic element that is provided on the first electrically conducting layer and that is a power device;
a first intermediate layer being provided on the first board, and having a first connector and a first resin board section, in which the first connector is fixed; and
a second intermediate layer being provided on the first intermediate layer, and having a plurality of second connectors and a second resin board section, in which the second connectors are fixed;
wherein the first connector is exposed from the first resin board section on the first board side, and connected with the first electrically conducting layer or the first electronic element,
wherein the first connector is exposed on an opposite side to the first board from the resin board section, and a second electronic element, which is a power device, is provided on the first connector,
wherein one of the second connectors is exposed from the second resin board section on the first board side, and connected with the second electronic element,
wherein another second connector protrudes from the second resin board section to the side on which the first intermediate layer is provided, and the first resin board section is provided with a first insertion section, into which the other second connector, which protrudes from the second resin board section, is inserted, and
wherein each of the second connectors penetrates the second resin board section and is exposed on the opposite side to the first board from the second resin board section.

US Pat. No. 10,359,020

IGNITION CONTROL APPARATUS AND IGNITION CONTROL METHOD

SHINDENGEN ELECTRIC MANUF...

1. An ignition control apparatus comprising:a switch element configured to energize and discharge an ignition coil in which a pulse signal is induced along with rotation of an internal combustion engine so as to generate in the ignition coil a voltage supplied to a spark plug of the internal combustion engine, the pulse signal including a first pulse and a second pulse, the second pulse continuously following the first pulse and differing in polarity from the first pulse, the ignition coil including a primary side coil and a secondary side coil, the primary side coil having a first end and a second end lower in voltage level than the first end, the first end and the second end of the primary side coil being respectively connected directly to an emitter and a collector of the switch element, and the secondary side coil being connected to the spark plug; and
a control circuit configured to acquire a rotational speed of the internal combustion engine in response to the first pulse, wherein:
the control circuit is configured to, in a first case that the rotational speed is equal to or greater than a first value,
acquire, in response to the first pulse, a first timing of discharging the ignition coil,
control the switch element so as to energize the ignition coil in response to the second pulse, and
discharge the ignition coil at the first timing; and
the control circuit is configured to, in a second case that the rotational speed is less than the first value,
acquire, in response to the second pulse, a second timing of energizing the ignition coil and a third timing of discharging the ignition coil, and
control the switch element to energize the ignition coil at the second timing, and
discharge the ignition coil at the third timing.

US Pat. No. 11,032,907

MANUFACTURING METHOD FOR ELECTRONIC APPARATUS WITH CASE IN WHICH PRINTED BOARDS JOINED TO EACH OTHER ARE STORED

SHINDENGEN ELECTRIC MANUF...

1. A manufacturing method for an electronic apparatus, the method comprising:providing a first printed board having a first main surface and a second main surface opposite to the first main surface, the first printed board having, on the first main surface, a plurality of first connection land portions provided along a side end of the first printed board, a cutout portion being provided between the plurality of first connection land portions;
providing a second printed board having a third main surface and a fourth main surface opposite to the third main surface, the second printed board having, on the fourth main surface, a plurality of second connection land portions provided along a side end of the second printed board, a cutout portion being provided between the plurality of second connection land portions;
joining the first printed board and the second printed board together with a conductive joining material such that the first main surface is opposed to the fourth main surface and the plurality of first connection land portions are electrically connected to the corresponding second connection land portions;
providing a case which is upwardly open and which has a first bottom surface and a second bottom surface disposed deeper than the first bottom surface;
storing the joined first and second printed boards in the case such that the second main surface of the first printed board is in contact with the first bottom surface and the second printed board is located above the second bottom surface;
providing a cover plate for sealing the case;
closing the opening in the upper portion of the case with the cover plate; and
sealing the first and second printed boards stored in the case by injecting a sealing resin into a storage space defined by the case and the cover plate, wherein
in the joining, the first printed board and the second printed board are joined together such that the cutout portion of the first printed board and the cutout portion of the second printed board at least partially overlap with each other to form a penetrating hole,
in the storing, the joined first and second printed boards are stored in the case such that the penetrating hole communicates with a space defined by the case and the second printed board and at least a part of the penetrating hole is located above an inclined surface connecting the first bottom surface and the second bottom surface, and
in the sealing, after the case is arranged such that an opening in a side surface of the case is oriented upward, the sealing resin is injected into the space through the opening in the side surface, thereby moving air bubbles retained in the space upward along the inclined surface to release the air bubbles to the first main surface side of the first printed board through the penetrating hole.

US Pat. No. 10,950,522

ELECTRONIC DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An electronic device comprising:an insulating substrate;
a plurality of conductor layers provided on a first major surface of the insulating substrate;
a plurality of electronic elements provided on the plurality of conductor layers respectively;
a heat dissipation plate provided on a second major surface opposite the first major surface of the insulating substrate; and
a cooling body in contact with the heat dissipation plate;
wherein the cooling body is divided on a surface, which contacts with the heat dissipation plate, to a plurality of areas corresponding to the plurality of electronic elements; and
wherein a plurality of groove parts are formed at the plurality of areas respectively.

US Pat. No. 10,651,038

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device comprising:a semiconductor layer including silicon carbide and having a main surface;
an electrode layer over the main surface of the semiconductor layer, wherein
the electrode layer has a first bottom surface facing the semiconductor layer, a top surface opposing the bottom surface, and a side surface, and
the electrode layer being a single layer mainly including silver;
a conductive wire in direct physical contact with the top surface of the electrode layer; and
a first metal layer mainly including titanium carbide, wherein
the first metal layer is configured to prevent the silver included in the electrode layer from diffusing into the semiconductor layer, and
the first metal layer covers, and is in direct physical contact with, the bottom and side surfaces of the electrode layer, and
the first metal layer is electrically connected to the main surface of the semiconductor layer.

US Pat. No. 10,514,011

STARTING POWER GENERATION APPARATUS AND STARTING POWER GENERATION METHOD

SHINDENGEN ELECTRIC MANUF...

1. A starting power generation apparatus comprising:a starter generator including
a field portion having a permanent magnet, and
an armature unit including a first multi-phase winding and a second multi-phase winding which are arranged in parallel;
a first power conversion unit including a first positive-side DC terminal connected to a battery and a plurality of first AC terminals connected to the first multi-phase winding, the first power conversion unit being configured to convert a power bidirectionally between DC and AC;
a second power conversion unit including a plurality of second AC terminals connected to the second multi-phase winding, the second power conversion unit being configured to control a current to be input and output via the second AC terminals; and
a control unit configured to
detect a positional relationship between the field portion and the armature unit based on an output voltage of the second multi-phase winding, and
control the first power conversion unit and the second power conversion unit in accordance with the positional relationship detected,
wherein the control unit is configured to detect the positional relationship when the starter generator is stopped, based on time widths of two or more predetermined voltages generated in two or more windings constituting the second multi-phase winding in a case that an output voltage of the battery is applied to the first multi-phase winding for a predetermined time in a state where current input and output via the second AC terminals is off.

US Pat. No. 10,461,042

SEMICONDUCTOR MODULE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor module comprising:a first substrate having a first insulating substrate and a first conductor layer which is formed on one-surface side of the first insulating substrate;
a power device part having a first electrode on one surface thereof and a second electrode and a gate electrode on the other surface thereof, and having the first electrode electrically connected to the first conductor layer;
a second substrate having a second insulating substrate, a second conductor layer formed on one-surface side of the second insulating substrate and a third conductor layer formed on the other surface of the second insulating substrate, wherein a hole is formed in the second insulating substrate at a position corresponding to a position of the gate electrode, the second conductor layer has a bonding portion bonded to the second electrode and a surrounding wall portion having an L shape formed at a position which surrounds the bonding portion as viewed in a plan view in a state where an upper end surface of the surrounding wall portion projects from a bonding surface between the second electrode and the bonding portion, and the second substrate is brought into contact with the first substrate by way of the surrounding wall portion;
an inner resin portion made of a resin and disposed in a space defined by the surrounding wall portion and sandwiched between the first insulating substrate and the second insulating substrate;
a control IC disposed on the third conductor layer; and
an outer resin portion made of a resin and disposed on the one surface side of the first substrate so as to cover the second substrate and the control IC, wherein
the first substrate, the power device part, the second substrate and the control IC are stacked in this order, wherein
a connecting member is disposed inside the hole formed in the second insulating substrate, and
the gate electrode is electrically connected to a control signal output terminal of the control IC through the connecting member.

US Pat. No. 10,439,056

POWER SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING POWER SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A power semiconductor device having a super junction structure formed of first conductive-type column regions and second conductive-type column regions where the first conductive-type column region and the second conductive-type column region are alternately arranged, and defining: an active element part which is a region where an active element electrode is formed as viewed from an upper surface side which is a front surface side of the first conductive-type column region and a front surface of the second conductive-type column region; and a gate pad part which is a region where a gate pad electrode is formed as viewed from the upper surface side, whereinthe active element part includes:
a low-resistance semiconductor layer;
a plurality of the first conductive-type column regions arranged at a predetermined interval along a predetermined direction;
a plurality of the second conductive-type column regions arranged alternately with the first conductive-type column regions along the predetermined direction;
a second conductive-type base region formed on a front surface of the first conductive-type column region and a front surface of the second conductive-type column region;
a trench formed in a region where the first conductive-type column region exists as viewed from the upper surface side, and is formed up to a depth position where the trench penetrates the base region and reaches the first conductive-type column region;
a gate insulation film formed on an inner peripheral surface of the trench;
a gate electrode buried in the trench by way of the gate insulation film;
a first conductive-type high concentration diffusion region formed such that the diffusion region is disposed on a front surface of the base region, and at least a portion of the diffusion region is exposed on the inner peripheral surface of the trench;
an interlayer insulation film configured to cover at least the first conductive-type high concentration diffusion region, the gate insulation film and the gate electrode;
a contact hole formed in a region where at least the second conductive-type column region exists as viewed from the upper surface side, penetrates the interlayer insulation film and reaches at least the base region;
a metal plug formed by filling predetermined metal in the contact hole;
a second conductive-type high concentration diffusion region formed so as to be in contact with a bottom surface of the metal plug and having higher dopant concentration than the base region; and
the active element electrode formed on the interlayer insulation film, and electrically connected to the base region, the first conductive-type high concentration diffusion region and the second conductive-type high concentration diffusion region through the metal plug,
the gate pad part includes:
the low-resistance semiconductor layer used in common with the active element part;
the first conductive-type column region;
the second conductive-type column region;
the base region used in common with the active element part;
the interlayer insulation film used in common with the active element part; and
the gate pad electrode formed on the interlayer insulation film, wherein
when the power semiconductor device is viewed on a predetermined cross section being parallel to the predetermined direction and including the gate pad part, the active element part includes one or more first conductive-type column regions between a predetermined second conductive-type column region disposed closest to the gate pad part among the second conductive-type column regions and a predetermined first conductive-type column region disposed closest to the gate pad part among the first conductive-type column regions which are in contact with the trench.

US Pat. No. 10,906,523

CONTROL APPARATUS AND CONTROL METHOD FOR HYBRID VEHICLE

Shindengen Electric Manuf...

1. A controlling apparatus of a hybrid vehicle comprising a motor generator that is mechanically connected to an internal combustion engine and that can generate power in response to rotation of the internal combustion engine and provide torque to the internal combustion engine, the controlling apparatus comprising:a rotation information acquiring unit that acquires rotation information of the motor generator with a higher resolution than rotation information of the internal combustion engine; and
a power generation determining unit that makes a determination regarding the power generation by the motor generator based on the rotation information of the motor generator, wherein the power generation determining unit permits idle power generation by the motor generator when starting of the internal combustion engine is completed and a starting completion reference time has passed,
wherein the power generation determining unit accepts or does not permit the idle power generation by the motor generator, based on a result of comparing a rotational speed of the motor generator and a power generation possible reference rotational speed.

US Pat. No. 10,832,994

ELECTRONIC MODULE

SHINDENGEN ELECTRIC MANUF...

1. An electronic module comprising:a sealing part;
an electronic element provided in the sealing part;
a back-surface exposed conductor having a back-surface exposed part, which has a back surface exposed from the sealing part, and having a one-terminal part, which extends from the back-surface exposed part and protrudes outward from a side of the sealing part; and
a back-surface unexposed conductor having an unexposed part, which is sealed in the sealing part, and having an other-terminal part, which extends from the unexposed part and protrudes outward from a side of the sealing part; wherein
the electronic element is placed on the back-surface exposed part,
the other-terminal part has a width narrower than a width of the one-terminal part,
the back-surface unexposed conductor and the back-surface exposed conductor do not overlap as seen along a thickness direction,
the back-surface exposed conductor has an inward bent part, which is provided between the back-surface exposed part and the one-terminal part, and bends toward inside of the sealing part, and
the back-surface unexposed conductor has no inward bent part.

US Pat. No. 10,615,092

ELECTRONIC DEVICE

SHINDENGEN ELECTRIC MANUF...

1. An electronic device comprising:a substrate;
a plurality of first conductor layers provided on the substrate;
a second conductor layer provided on the substrate;
a first electronic element provided on a first one of the first conductor layers;
a second electronic element, a wire or a connector provided on a second one of the first conductor layers; and
a sealing part covering at least the substrate, the first conductor layers, the second conductor layer, the first electronic element, and the second electronic element, the wire or the connector,
wherein the first conductor layers are not provided on a virtual straight line including the second conductor layer in an in-plane direction of the substrate,
wherein the virtual straight line passes through between the first one of the first conductor layers, on which the first electronic element is provided, and the second one of the first conductor layers, on which the second electronic element, the wire or the connector is provided, in the in-plane direction of the substrate, and
wherein the second conductor layer is sealed inside the sealing part and covered only with the sealing part.

US Pat. No. 10,910,292

ELECTRONIC DEVICE AND CONNECTION BODY

SHINDENGEN ELECTRIC MANUF...

1. An electronic device comprising:a substrate;
a conductor layer provided on the substrate;
an electronic element provided on the conductor layer;
a connection body having a head part connected to a front surface of the electronic element via a conductive adhesive;
a sealing part which seals the conductor layer, the electronic element and the head part;
wherein the head part has a protrusion part protruding toward a side of the electronic element from a facing surface facing the front surface of the electronic element, and a projection part protruding from the protrusion part toward the side of the electronic element, and
in a state where the projection part comes into point contact with the front surface of the electronic element, and the conductive adhesive is bonded to the protrusion part and is bonded to the facing surface of the head part around the protrusion part, the head part is connected to the front surface of the electronic element.

US Pat. No. 10,879,892

SWITCHING ELEMENT CONTROL CIRCUIT AND POWER MODULE

SHINDENGEN ELECTRIC MANUF...

1. A switching element control circuit configured to perform a measurement mode in which a threshold voltage of a switching element having a first electrode, a second electrode, and a third electrode is measured and a control mode in which an ON/OFF operation of the switching element is controlled in a switching manner, the switching element control circuit comprising:a threshold voltage measurement power source which supplies, in the measurement mode, an electric current to the first electrode of the switching element;
a third electrode voltage control part which controls, in the measurement mode, a third electrode voltage such that the third electrode voltage is increased in a stepwise manner and controls, in the control mode, the third electrode voltage so as to control the ON/OFF operation of the switching element;
an ON/OFF state determination part which determines, in the measurement mode, an ON/OFF state of the switching element; and
a memory part which stores, in the measurement mode, the third electrode voltage applied to the third electrode as a threshold voltage of the switching element when the ON/OFF state determination part determines that the switching element is brought into an ON state, wherein
the third electrode voltage control part controls, in the control mode, the third electrode voltage based on information including the threshold voltage stored in the memory part at the time of bringing the switching element into an ON state.

US Pat. No. 10,872,952

MOSFET AND POWER CONVERSION CIRCUIT

SHINDENGEN ELECTRIC MANUF...

1. A MOSFET comprising:a semiconductor base substrate having a super junction structure which is formed of an n-type column region and a p-type column region; and
a gate electrode formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein
using a deepest depth position of a surface of a depletion layer on the first main surface side when the depletion layer extends most in the super junction structure by turning off the MOSFET as a reference, in a graph where a depth x at a predetermined depth position of the super junction structure is taken on an axis of abscissas, average positive charge density ?(x) at the predetermined depth position of the super junction structure expressed by a following formula (1) when the super junction structure is depleted by turning off the MOSFET is taken on an axis of ordinates, and assuming a depth of a surface of the depletion layer on a second main surface side at a shallowest depth position when the depletion layer extends most in the super junction structure by turning off the MOSFET as a,
in a curve which expresses the average positive charge density ?(x), a value of the average positive charge density ?(0) when x=0 becomes a negative value and a value of the average positive charge density ?(a) when x=a becomes a positive value,
an area of a region surrounded by a curve which expresses the average positive charge density ?(x), a straight line when x=0, and an x axis is equal to an area of a region surrounded by the curve which expresses the average positive charge density ?(x), a straight line when x=a, and the x axis,
in a case that a state where a total amount of dopant in the n-type column region differs from a total amount of dopant in the p-type column region is brought about,
using a surface of the super junction structure on the first main surface side as a reference, in the state where the total amount of dopant in the n-type column region differs from the total amount of dopant in the p-type column region, assuming a depth position where the average positive charge density ?(x) becomes 0 as Xm?, and assuming a deepest depth position of the surface of the depletion layer on the first main surface side when the depletion layer extends most in the super junction structure by turning off the MOSFET as X0?, and
using the surface of the super junction structure on the first main surface side as a reference, in a case where the average positive charge density when the super junction structure is depleted by turning off the reference MOSFET which is configured such that the total amount of dopant in the n-type column region is set equal to the total amount of dopant in the p-type column region is set as a reference average positive charge density ?0(x), assuming a depth position where the reference average positive charge density ?0(x) becomes 0 as Xm, and assuming a deepest depth position of the depletion layer on the first main surface side when the depletion layer extends most in the super junction structure by turning off the reference MOSFET as X0, a relationship of |X0?X0?|<|Xm?Xm?| is satisfied,

(In the formula (1), Wn(x) indicates a width of the n-type column region at the predetermined depth position, Nd(x) indicates average density of a positive charge at the predetermined depth position of the n-type column region when the super junction structure is depleted by turning off the MOSFET, Wp(x) indicates a width of the p-type column region at the predetermined depth position, Na(x) indicates average density of a negative charge at the predetermined depth position of the p-type column region when the super junction structure is depleted by turning off the MOSFET, q indicates an elementary charge, and w indicates a positive constant which satisfies Wn(x)+Wp(x)=2w).

US Pat. No. 10,748,700

COIL STRUCTURE AND MAGNETIC COMPONENT

SHINDENGEN ELECTRIC MANUF...

1. A coil structure comprising:a coil including conductors; and
three or more insulating sheets provided between the conductors included in the coil;(1) wherein the three or more insulating sheets have two low thermal conductivity insulating sheets, and a high thermal conductivity insulating sheet, whose thermal conductivity is higher than thermal conductivity of the low thermal conductivity insulating sheets, andwherein the high thermal conductivity insulating sheet is provided between the two low thermal conductivity insulating sheets at a central part, and the two low thermal conductivity insulating sheets contact with each other at a peripheral part and the high thermal conductivity insulating sheet does not exist at the peripheral part; or(2) wherein the three or more insulating sheets have two high permittivity insulating sheets and a low permittivity insulating sheet, whose permittivity is lower than permittivity of the high permittivity insulating sheets,wherein the low permittivity insulating sheet is provided between the two high permittivity insulating sheets at a central part, and the two high permittivity insulating sheets contact with each other at a peripheral part and the low permittivity insulating sheet does not exist at the peripheral part.

US Pat. No. 11,037,870

ELECTRONIC MODULE, LEAD FRAME AND MANUFACTURING METHOD FOR ELECTRONIC MODULE

SHINDENGEN ELECTRIC MANUF...

1. An electronic module comprising:a first substrate;
a first electronic element that is provided on one side of the first substrate;
a second electronic element that is provided on one side of the first electronic element;
a second substrate that is provided on one side of the second electronic element;
a first terminal part that is electrically connected to the first electronic element; and
a second terminal part that is electrically connected to the second electronic element, wherein
the first terminal part has a first terminal base end part, a first terminal outer part, and a first bending part that is provided between the first terminal base end part and the first terminal outer part and that is bent toward the other side on a side of the first terminal base end part,
the second terminal part has a second terminal base end part, a second terminal outer part, and a second bending part that is provided between the second terminal base end part and the second terminal outer part and that is bent toward one side on a side of the second terminal base end part, and
a sealing part, which seals at least the first electronic element, the second electronic element, the first terminal base end part, the first bending part, the second terminal base end part and the second bending part, is provided,
wherein at a boundary between the sealing part and an outside, a distance in a thickness direction between the first terminal outer part and the first substrate corresponds to a distance in the thickness direction between the second terminal outer part and the second substrate.

US Pat. No. 11,031,932

POWER MODULE

SHINDENGEN ELECTRIC MANUF...

1. A power module, comprising:a switching element having a first electrode, a second electrode, and a control electrode;
a temperature detection part which detects an operation temperature of the switching element;
a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage during an operation of the switching element which is calculated based on information including the operation temperature of the switching element;
a switching speed control part which controls a switching speed of the switching element based on the operation temperature of the switching element;
a memory part which stores information including an initial threshold voltage of the switching element and an initial temperature of the switching element when the initial threshold voltage is measured and information relating to a temperature characteristic of a threshold voltage in the switching element; and
a threshold voltage calculation part which calculates a threshold voltage during an operation of the switching element based on information including the operation temperature of the switching element which is detected by the temperature detection part, an initial threshold voltage of the switching element, and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage in the switching element, wherein
the control electrode voltage control part, when the switching element is brought into an ON state, controls a control electrode voltage based on a threshold voltage during the operation of the switching element which is calculated by the threshold voltage calculation part.

US Pat. No. 10,985,092

SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A semiconductor device, comprising:a seal portion;
a first electronic element disposed in the seal portion;
a second electronic element disposed in the seal portion;
a first lead terminal having one end, on a top surface of which the first electronic element is disposed within the seal portion, and another end that is exposed from the seal portion;
a second lead terminal having one end, on a top surface of which the second electronic element is disposed within the seal portion, and another end that is exposed from the seal portion;
a connecting element having one end that is electrically connected to an input/output electrode of the first electronic element, and another end that is electrically connected to the one end of the second lead terminal; and
a first conductive bonding agent for joining together the other end of the connecting element and the top surface of the one end of the second lead terminal,
wherein a groove is formed on the top surface of the one end of the second lead terminal, the groove preventing the first conductive bonding agent from flowing toward the second electronic element when the connecting element and the second lead terminal are joined together, and performing a mold lock when the seal portion is sealed,
wherein the groove is formed on the top surface of the one end of the second lead terminal in a region between the one end of the connecting element and the second electronic element,
wherein the groove includes
a first groove portion, into which a sealing member of the seal portion is filled, and
second groove portions formed to be adjacent to the first groove portion for blocking the first conductive bonding agent,
wherein the second groove portions are formed on both sides of the first groove portion,
wherein one of the second groove portions is closer to the other end of the connecting element than the first groove portion is, and blocks the first conductive bonding agent for connecting the other end of the connecting element and the second lead terminal during a connection process, and
wherein the other of the second groove portions is closer to an electrode of the second electronic element than the first groove portion is, and blocks a second conductive bonding agent for connecting the electrode of the second electronic element and the second lead terminal during a connection process.

US Pat. No. 10,979,043

SWITCHING ELEMENT CONTROL CIRCUIT AND POWER MODULE

SHINDENGEN ELECTRIC MANUF...

1. A switching element control circuit for controlling an ON/OFF operation of a switching element which includes a first electrode, a second electrode, and a third electrode, the switching element control circuit comprising:a third electrode voltage control part which controls a third electrode voltage for controlling the ON/OFF operation of the switching element;
a temperature detection part which detects an operation temperature of the switching element;
a memory part which stores information including an initial threshold voltage of the switching element and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage of the switching element; and
a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the operation temperature of the switching element detected by the temperature detection part, the initial threshold voltage, and an initial temperature of the switching element when the initial threshold voltage is measured, and information relating to the temperature characteristic of a threshold voltage of the switching element, wherein
the third electrode voltage control part controls the third electrode voltage based on the threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part at the time of bringing the switching element into an ON state, and
the information relating to the temperature characteristic of the threshold voltage of the switching element is expressed by a characteristic formula which satisfies a relationship of Vth=Vth0??(T?T0) assuming that a temperature coefficient of the threshold voltage of the switching element is ?, the threshold voltage at the time of operating the switching element is Vth, the initial threshold voltage is Vth0, the operation temperature of the switching element detected by the temperature detection part is T, and the initial temperature of the switching element when the initial threshold voltage is measured is T0.

US Pat. No. 10,825,909

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SHINDENGEN ELECTRIC MANUF...

1. A method of manufacturing a semiconductor device having a shield gate structure where a gate electrode and a shield electrode are separated from each other in an in-plane direction, the method comprising in the following order:a semiconductor base body preparing step of preparing a semiconductor base body having a first conductive-type first semiconductor layer and a first conductive-type second semiconductor layer having lower concentration than the first semiconductor layer;
a first trench forming step of forming a predetermined first trench on the second semiconductor layer;
a first insulation film forming step of forming a first insulation film such that the first insulation film is filled in a lower portion of the first trench;
a gate insulation film forming step of forming a gate insulation film on a side wall of an upper portion of the first trench;
a gate electrode forming step of forming the gate electrode made of polysilicon with the gate insulation film interposed between the upper portion of the first trench and the gate electrode;
a second trench forming step of forming a second trench in the inside of the first trench by removing a center portion of the first insulation film by etching;
a second insulation film forming step of forming a second insulation film at least in the inside of the second trench under a condition that a first gap remain in the inside of the second trench;
a shield electrode forming step of forming the shield electrode in the inside of the first gap;
a shield electrode etching back step of forming a second gap in an upper portion of the first gap by removing a portion of the shield electrode by etching back; and
a source electrode forming step of forming a source electrode such that the source electrode is electrically connected to the shield electrode.