US Pat. No. 9,352,719

SILICONE RUBBER SHEET AND AIRBAG DEVICE

TAKATA CORPORATION, Toky...

1. An airbag device comprising an airbag which is usually folded and which is expanded and developed in the event of an emergency,
an inflator which generates gas by burning an agent stored in the inside, and a flow passage to feed the gas from the inflator
to the airbag,
with a silicone rubber sheet being used on at least an inner surface of a synthetic fiber fabric or an inorganic fiber fabric
constituting the flow passage, the silicone rubber sheet being produced by stacking 0.5 mm or more of silicone composition
containing

(A) 100 parts by weight of organopolysiloxane which is represented by the following average composition formula (1):
R1SiO(4-n)/2  (1)

where in the formula, R1 represents a substituted or unsubstituted monovalent hydrocarbon group and n represents a positive
number of 1.95 to 2.05,

and which exhibits an average degree of polymerization of 1,000 or more,
(B) 20 to 80 parts by weight of reinforcing silica powder having a specific surface area of 50 m2/g or more and

(C) a curing agent, and,
performing heat curing; and,
wherein when the silicone rubber sheet is formed into a substantially cylindrical shape, tab portions protruding in the forward
and backward directions of the flow passage are included, and the tab portions are sewed on the airbag.

US Pat. No. 9,133,100

METHOD FOR SYNTHESIZING RARE EARTH METAL EXTRACTANT

SHIN-ETSU CHEMICAL CO., L...

1. A method for synthesizing a rare earth metal extractant comprising a dialkyl diglycol amic acid having the general formula
(1):

wherein R1 and R2 are each independently an alkyl group, at least one of R1 and R2 is a straight or branched alkyl group having at least 6 carbon atoms, wherein the rare earth metal extractant is contained
in an organic phase for solvent extraction of rare earth metals, and wherein the organic phase comprises an organic solvent
which is capable of dissolving the dialkyl diglycol amic acid,

the method comprising the steps of:
reacting X mole of diglycolic acid with Y mole of an esterifying agent, with a molar ratio of Y/X being at least 2.5, at a
reaction temperature of at least 70° C. for a reaction time of at least 1 hour, then concentrating in vacuum to remove unreacted
reactant and reaction residue, thus obtaining a reaction intermediate product,

adding the organic solvent to the reaction intermediate product, wherein the organic solvent is a nonpolar or low-polar solvent
and wherein the organic solvent is to be contained in the organic phase,

reacting the reaction intermediate product with Z mole of a dialkylamine, with a molar ratio of Z/X being at least 0.9, so
as to obtain the rare earth metal extractant which is contained in the organic solvent, and

directly extracting a rare earth metal with the organic phase, which comprises the rare earth metal extractant contained in
the organic solvent, without purifying the rare earth metal extractant.

US Pat. No. 9,274,428

RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

14. A method of patterning a photoresist film, comprising:
forming a photoresist film on a substrate;
forming a resist top coat on the photoresist film by depositing a resist top coat composition on the photoresist film, wherein
the resist top coat composition comprises a copolymer including a base resin having a repeating unit p of styrene having a
1,1,1,3,3,3-hexafluoro-2-propanol group and a repeating unit q of acenaphthylene having chemical formula 1, wherein the copolymer
is dissolved in an ether solvent, and wherein the ether solvent comprises one or more of diisopropyl ether, diisobutyl ether,
diisopentyl ether, di-n-pentyl ether, methylcyclopentyl ether, methyl cyclohexyl ether, di-n-butyl ether, di-sec-butyl ether,
di-sec-pentyl ether, di-tert-amyl ether, and di-n-hexyl ether:

wherein:
R is hydrogen, hydroxyl;
R1 is hydrogen, hydroxyl, linear or branched C1-C10-alkyl, cycloalkyl, acyloxy, alkoxycarbonyl, carboxyl, or —OC(?O) R2, wherein R2 is linear or branched C1-C10-alkyl, cycloalkyl, or fluorinated alkyl;

m is an integer, wherein the integer is 1 or 2; and
wherein p and q are proportions of the respective repeating units in the copolymer having the expressions 0.3?p?0.9, 0.1?q?0.7
and 0.7?p+q?1; and

patterning the photoresist film using the resist top coat.

US Pat. No. 9,274,069

METHOD FOR EVALUATING DEGREE OF CRYSTALLINE ORIENTATION OF POLYCRYSTALLINE SILICON, METHOD FOR SELECTING POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON ROD, POLYCRYSTALLINE SILICON INGOT, AND METHOD FOR MANUFACTURING MONOCRY

SHIN-ETSU CHEMICAL CO., L...

1. A method for evaluating the degree of crystalline orientation of polycrystalline silicon by an X-ray diffraction method,
the evaluating method comprising:
forming the polycrystalline silicon into a plate-like sample;
disposing the plate-like sample in a position where Bragg reflection from a Miller index face is detected;
performing in-plane rotation of the plate-like sample at a rotational angle ? with the center of the plate-like sample as
the center of rotation, so that an X-ray-radiated region defined by a slit ?-scans over the principal surface of the plate-like
sample, to determine a chart representing the dependence of the intensity of Bragg reflection from the Miller index face
on the rotational angle (?) of the plate-like sample;

determining a baseline from the chart; and
using the diffraction intensity value of the baseline as the estimative index of the degree of crystalline orientation.

US Pat. No. 9,261,788

COMPOUND FOR FORMING ORGANIC FILM, AND ORGANIC FILM COMPOSITION USING THE SAME, PROCESS FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A compound for forming an organic film, wherein the compound contains a polymer having a partial structure represented
by the following formula (vi-2),

wherein the ring structures Ar1 and Ar2 each represent a substituted or unsubstituted benzene ring or naphthalene ring; R1 represents a linear, branched or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms, and a methylene group constituting
R1 may be substituted by an oxygen atom; a+b and a?+b? are each independently 1, 2 or 3; c, d, c? and d? are each independently
0, 1 or 2; x and y each independently represent 0 or 1, when x=0, then a=c=0, and when y=0, then a?=c?=0; L5 represents a linear, branched or cyclic divalent organic group having 1 to 20 carbon atoms, L6? represents the partial structure represented by the following formula (i), 0?m<1, 0

wherein the ring structures Ar3 represent a substituted or unsubstituted benzene ring or naphthalene ring; R0 represents a hydrogen atom or a linear, branched or cyclic monovalent organic group having 1 to 30 carbon atoms; and L0 represents a divalent organic group selected from the following:


US Pat. No. 9,091,931

PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK

TOPPAN PRINTING CO., LTD....

1. A photomask blank comprising:
a first film containing chromium and which is not substantially etched by dry etching using fluorine and which is etchable
by dry etching using oxygen-containing chlorine, the first film being a metal compound film mainly comprising chromium oxide,
chromium nitride, or chromium oxynitride, or a metal film or an alloy film mainly comprising chromium;

a second film, stacked on the first film, containing no chromium and which is etchable by dry etching using fluorine and is
etchable by dry etching using oxygen-containing chlorine, the second film being a silicon oxide film, a silicon nitride film,
or a silicon oxynitride film, and the second film containing a transition metal selected from molybdenum, tantalum, tungsten,
zirconium, hafnium, vanadium, and niobium, wherein an atomic configuration of the second film is such that the transition
metal accounts for at least 10 at % of a sum of the transition metal and silicon;

at least one of a light blocking film, an antireflective film, a hard mask film, a phase-shift film, and a transparent substrate,
each of which is not substantially etched by the dry etching using oxygen-containing chlorine and each of which is etchable
by the dry etching using fluorine, provided under the first film; and

a chemical amplification resist film for electron beam lithography, which is at least 50 nm and at most 350 nm in film thickness,
formed on and in contact with the second film.

US Pat. No. 9,278,881

EUV LITHOGRAPHY MEMBER, MAKING METHOD, AND TITANIA-DOPED QUARTZ GLASS

SHIN-ETSU CHEMICAL CO., L...

1. An EUV lithography member made of titania-doped quartz glass containing striae having a curvature radius of at least 150
mm in a surface perpendicular to an EUV light-reflecting surface, wherein the EUV lithography member is directly formed from
titania-doped quartz glass which has been homogenization treated by a zone melting method, without hot shaping and has a diameter
of at least 220 mm after homogenization treatment.

US Pat. No. 9,268,212

PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK

SHIN-ETSU CHEMICAL CO., L...

1. A photomask blank comprising:
a hard mask film comprising a material comprising chromium and tin, wherein a content of tin is from 0.01 to 2 times a content
of chromium in the material, based on an atomic ratio; and

an inorganic material film configured to be etched by fluorine-containing dry etching,
wherein
the hard mask film is disposed on the inorganic material film,
the hard mask film has a thickness of 1 to 30 nm, and
the inorganic material film comprises one or more elements selected from the group consisting of molybdenum, tantalum, hafnium,
niobium, tungsten, and silicon.

US Pat. No. 9,238,734

ROOM TEMPERATURE AND HUMIDITY THICKENING THERMO-CONDUCTIVE SILICON GREASE COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A heat-conductive silicone grease composition adapted to thicken with moisture at room temperature, comprising as essential
components,
(A) 5 to 50 parts by weight of an organopolysiloxane capped at both ends with a hydroxyl group and having a viscosity of 0.1
to 1,000 Pa·s at 25° C.,

(B) 50 to 95 parts by weight of an organopolysiloxane represented by the general formula (1):
wherein
R1 is independently a substituted or unsubstituted monovalent hydrocarbon group,

R2 is independently an alkyl, alkoxyalkyl, alkenyl or acyl group,

n is an integer of 2 to 80, and
a is an integer of 1 to 3,
the sum of components (A) and (B) being 100 parts by weight,
(C) 1 to 30 parts by weight of a silane compound containing at least three silicon-bonded hydrolysable groups per molecule
and/or a (partial) hydrolyzate or (partial) hydrolytic condensate thereof,

(D) 0.01 to 20 parts by weight of a thickening catalyst in the form of a silane or siloxane containing a guanidyl group,
(E) 100 to 2,000 parts by weight of a heat conductive filler having a thermal conductivity of at least 10 W/m·° C., and
(F) silica fine powder in an amount of 10 to 100 parts by weight per 100 parts by weight of component (A).

US Pat. No. 9,160,011

FUEL CELL SEPARATOR SEALING MATERIAL AND FUEL CELL SEPARATOR

HONDA MOTOR CO., LTD., T...

1. A sealing material for use in a fuel cell separator comprising:
a separator substrate,
a primer layer thereon, and
an elastomeric sealing material on the primer layer,
said sealing material comprising:
a primer composition containing Si—H functional groups of which the primer layer is formed, and
a liquid addition-curable silicone rubber composition containing alkenyl groups and Si—H functional groups of which the elastomeric
sealing material is formed,

wherein a molar ratio of a total amount of the Si—H functional groups to a total amount of the alkenyl groups per unit weight
of the primer composition and the liquid addition-curable silicone rubber composition is in the range: 5.0<(total amount of
the Si—H functional groups)/(total amount of the alkenyl groups)<50.0,

wherein said liquid addition-curable silicone rubber composition comprises:
(A) 100 parts by weight of a liquid organopolysiloxane containing at least two of the alkenyl groups each attached to a silicon
atom in a molecule,

(B) 0.5 to 20 parts by weight of an organohydrogenpolysiloxane containing at least three of the Si—H functional groups in
a molecule,

(C) 5 to 30 parts by weight of fumed silica having a specific surface area of 50 to 400 m2/g, and

(D) an addition reaction catalyst from a platinum group metal,
a molar ratio of the Si—H functional groups in component (B) to the alkenyl groups in component (A) being in the range: 0.8?the
Si—H functional groups/the alkenyl groups?3.0.

US Pat. No. 9,131,673

SUSTAINED RELEASE PREPARATION COMPRISING A FOAMED CAPILLARY TUBE

SHIN-ETSU CHEMICAL CO., L...

1. A container for a sustained release preparation, the container being tubular and comprising two layers, an outer and an
inner layer, the inner layer having a thickness of 0.12 to 1.2 mm and the inner layer having a foamed structure permitting
soaking-up of a liquid chemical to a height exceeding 25 mm by capillarity, wherein the liquid chemical is a sex pheromone,
and the foamed structure of the inner layer is formed in a polymer selected from the group consisting of high density polyethylene,
low density polyethylene, cross-linked polyethylene, ethylene-vinyl acetate copolymer, aliphatic polyester, blend polymer
of polyolefin and aliphatic polyester, and polylactic acid.

US Pat. No. 9,358,188

WATER-IN-SILICONE OIL MACROEMULSION COSMETIC COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A water-in-silicone oil macroemulsion cosmetic composition comprising a silicone oil phase part and aqueous phase, wherein
the silicone oil phase part (S) comprises a partly crosslinked emulsifiable silicone elastomer, a partly crosslinked non-emulsifiable
silicone elastomer, a non-crosslinked silicone emulsifier, and a silicone oil, and

the aqueous phase part is substantially free from glycerin, and the aqueous phase part (W) contains 1,3-butylene glycol and
a lower alcohol at a total amount of 13 to 18% by weight of the entire composition, and at least one member selected from
the group consisting of organic acid salts, inorganic salts, and polyhydric alcohols other than glycerin and 1,3-butylene
glycol at a total amount of 0.4 to 3.0% by weight of the entire composition as a freeze stabilizer,

wherein the weight ratio of the silicone oil phase part (S): the aqueous phase part being 7:93 to 13.1:86.9 and water content
being 67.7 to 73.6% by weight in the composition, and

wherein the water-in-silicone oil macroemulsion is in the form of an emulsion having an average particle size of 5 to 20 ?m.

US Pat. No. 9,261,783

FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID

SHIN-ETSU CHEMICAL CO., L...

1. A polymer comprising:
recurring units having the general formula (1a)
wherein
R1 is hydrogen, methyl or trifluoromethyl,

R2 and R3 are each independently hydrogen or a straight, branched or cyclic monovalent C1-C20 hydrocarbon group, or R2 and R3 taken together represent a divalent group which forms a C3-C20 hydrocarbon ring with the carbon atom to which they are attached,

R4 is a group having the general formula (A):

wherein R2 and R3 are as defined above, R4a is a primary C1-C5 alkyl group, a C2-C8 fluoroalkyl group or a group: MeO(CH2CH2O)nCH2CH2— or EtO(CH2CH2O)nCH2CH2— wherein Me is methyl, Et is ethyl, and n is 0, 1 or 2, and the broken line denotes a valence bond, and
k is 0 or 1; and
recurring units having the following formula (i) or (ii)
wherein R1, R2, and R3 are as defined above, A is a straight, branched or cyclic C1-C6 alkylene group, and b is a number in the range: 0?b<1.0.

US Pat. No. 9,328,429

METHOD FOR EVALUATING DEGREE OF CRYSTAL ORIENTATION IN POLYCRYSTALLINE SILICON, SELECTION METHOD FOR POLYCRYSTALLINE SILICON RODS, AND PRODUCTION METHOD FOR SINGLE CRYSTAL SILICON

Shin-Etsu Chemical Co., L...

1. An evaluation method of a degree of crystal orientation of polycrystalline silicon by an X-ray diffraction method, the
method comprising
positioning a plate-like sample from the polycrystalline silicon, such that a Bragg reflection from a Miller index plane
is detected,

rotating the plate-like sample in a plane to a rotation angle ?, with the center of the plate-like sample as the rotation
center, such that an X-ray irradiation region defined by a slit ?-scans the principal surface of the plate-like sample,

creating a chart which indicates dependency of intensity of the Bragg reflection from the Miller index plane on the
rotation angle (?) of the plate-like sample, and

evaluating the degree of crystal orientation of the polycrystalline silicon in terms of the number of peaks appearing in the
chart.

US Pat. No. 9,263,333

WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER

SHIN-ETSU CHEMICAL CO., L...

1. A wafer processing laminate comprising a support, a temporary adhesive material layer formed thereon and a wafer laminated
on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed,
wherein the temporary adhesive material layer comprises a three-layered structure composite temporary adhesive material layer
comprising a first temporary adhesive layer of a non-silicone thermoplastic resin layer (A) releasably adhered on a surface
of the wafer, a second temporary adhesive layer of a thermoplastic siloxane resin polymer layer (B) laminated on the first
temporary adhesive layer, and a third temporary adhesive layer of a thermosetting siloxane-modified polymer layer (C) laminated
on the second temporary adhesive layer and releasably adhered to the support.

US Pat. No. 9,182,670

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A pattern forming process comprising the steps of:
applying a negative resist composition onto a processable substrate to form a resist film,
exposing the film patternwise to high-energy radiation, and
developing the exposed film with an alkaline developer to form a resist pattern;
wherein the negative resist composition is a chemically amplified negative resist composition comprising a polymer, adapted
such that the polymer may turn insoluble in alkaline developer by reacting with a crosslinker and/or a recurring unit having
a crosslinkable functional group in the polymer under the catalysis of an acid generated upon exposure to high-energy radiation,
to form crosslinks between polymer molecules,

said polymer comprising:
recurring units of the general formula (1),
recurring units of at least one type selected from the general formulae (2), (3), and (4), and
recurring units of the general formula (5):
wherein A is a C1-C10 divalent hydrocarbon group in which some or all hydrogen atoms may be replaced by fluorine or a methylene moiety may be replaced
by oxygen,
Rf is each independently hydrogen, fluorine, trifluoromethyl, or pentafluoroethyl, with the proviso that not all Rf's are
hydrogen,

B is a single bond or a C1-C10 alkylene group which may be separated by ethereal oxygen,

R1 is hydrogen, fluorine, methyl, or trifluoromethyl,

R2, R3, and R4 are each independently a substituted or unsubstituted, straight or branched C1-C10 alkyl, alkenyl or oxoalkyl group, or a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, any two or more of R2, R3, and R4, taken together, may be a divalent organic group to form a ring with the sulfur atom,

R5 is each independently a C1-C6 alkyl group,

a is an integer of 0 to 4, b is an integer of 1 to 5, c and d each are an integer of 1 to 4, e is an integer of 0 to (4-c),
f is an integer of 0 to (4-d), p is independently 0 or 1, and t is an integer of 0 to 2,

wherein C is a single bond or a C1-C10 alkylene group which may be separated by ethereal oxygen, R1 is as defined above, R6 is each independently chlorine, bromine, an optionally halo-substituted C1-C8 alkoxy group, a C6-C20 aromatic ring-containing hydrocarbon group selected from the group consisting of optionally alkyl-substituted, naphthyl, benzyloxy,
naphthyloxy and phenethyl groups, or an optionally halo-substituted C1-C12 acyloxy group, g is an integer of 1 to 5, q is 0 or 1, and s is an integer of 0 to 2,
wherein the recurring units of formula (1) account for 0.5 to 10 mol % and the sum of recurring units of formulae (2), (3),
and (4) accounts for 50 to 99.5 mol %, based on the entire recurring units of the polymer.

US Pat. No. 9,096,776

SILICONE RELEASE COATING COMPOSITION OF CONDENSATION REACTION CURING TYPE

SHIN-ETSU CHEMICAL CO., L...

1. A silicone release coating composition of condensation reaction curing type comprising:
component (A) in an amount of 100 parts by weight which is an organopolysiloxane having at least two silanol groups in one
molecule;

component (B) which is composed of component (B-1) in an amount of 0.1 to 20 parts by weight which is an organohydrogenpolysiloxane
having at least three SiH groups in one molecule, and/or component (B-2) in an amount of 0.1 to 20 parts by weight which is
an organopolysiloxane having at least three hydrolyzable groups directly bonded to a silicon atom in one molecule, with component
(B) being in such an amount that the number of moles of SiH groups and/or hydrolyzable groups as active groups therein is
1 to 200 times the number of moles of silanol amount in component (A);

component (C) in a catalyst quantity which is a compound of metal selected from magnesium, aluminum, titanium, chromium, cobalt,
nickel, copper, zinc, zirconium, tungsten, and bismuth, which functions as a condensation reaction catalyst;

component (D-2) in an amount of 1 to 20 parts by weight which is a cocatalyst of an organic compound functioning as an oxygen
multidentate ligand, wherein component (D-2) is any one of polybasic carboxylic acid, hydroxy acid, hydroxyketone, diketone,
keto acid, and a substituted derivative thereof, which is a cocatalyst of an organic compound capable of functioning as a
chelating agent; and

component (F) in an amount of 1 to 20 parts by weight which is an organic compound having the following formula:

US Pat. No. 9,421,532

MONONUCLEAR IRON COMPLEX AND ORGANIC SYNTHESIS REACTION USING SAME

KYUSHU UNIVERSITY, NATION...

11. A catalyst comprising a mononuclear iron complex having formula (1):
wherein
R1 to R6 are each independently hydrogen, or an alkyl, aryl, aralkyl, organoxy, monoorganoamino, diorganoamino, monoorganophosphino,
diorganophosphino, monoorganosilyl, diorganosilyl, triorganosilyl, or organothio group which may be substituted with X, or
at least one pair of any one of R1 to R3 and any one of R4 to R6, taken together, represent a crosslinking substituent, and X is a halogen atom, organoxy, monoorganoamino, diorganoamino
or organothio group,

L is a two-electron ligand other than CO, with the proviso that when a plurality of L's are present, they may be the same
or different, and when two L's are present, they may bond together, and

n and m are each independently an integer of 1 to 3, provided that n+m is 3 or 4, the catalyst having activity to three reactions:
hydrosilylation reaction, hydrogenation reaction, and reductive reaction of carbonyl compounds.

US Pat. No. 9,108,877

GLASS BASE MATERIAL ELONGATION METHOD

Shin-Etsu Chemical Co., L...

1. A glass base material elongation method for elongating a glass base material with a large diameter to manufacture a glass
rod with a smaller diameter, the glass base material having a transparent glass tapered portion at one end of a trunk portion
and a glass tapered portion including a non-transparent glass portion at another end of the trunk portion, the method comprising:
prior to the elongation, fusing a hanging dummy to an end of the transparent glass tapered portion, setting the hanging dummy
in communication with a feeding mechanism, and inserting the glass base material into a heating furnace beginning with the
another end; and

performing the elongation, wherein
said performing the elongation includes positioning the another end lower than the center of the heating furnace, heating
the glass base material while raising the glass base material so as to heat the another end from above, and, thereafter, heating
the glass base material while lowering the glass base material.

US Pat. No. 9,083,026

ELECTROLYTE MEMBRANE-ELECTRODE ASSEMBLY FOR DIRECT METHANOL FUEL CELL

Shin-Etsu Chemical Co., L...

1. An electrolyte membrane-electrode assembly for a direct methanol fuel cell, comprising a solid polymer electrolyte membrane
sandwiched between a pair of electrodes each comprising a catalyst layer coated on and/or impregnated in a porous support,
wherein
said solid polymer electrolyte membrane is prepared by irradiating a resin membrane with radiation and graft polymerizing
a radical polymerizable monomer thereto: that the catalyst layer of an anode comprises a catalyst having fine particles of
platinum group metal or platinum alloy with a particle size of up to 5 nm supported on carbon particles, and a solid polymer
electrolyte: that the catalyst layer of the anode has a noble metal content of up to 5 mg/cm2: and that the catalyst comprises primary metal particles with a particle size of 0.1 to 2 nm on carbon particles, and particles
of a different metal with a particle size of up to 4 nm on surfaces of the primary metal particles,

and wherein the catalyst comprises Pt particles with a particle size of 0.1 to 2 nm on carbon particles, and PtRu on surfaces
of the Pt nuclei to a particle size of up to 4 nm.

US Pat. No. 9,256,127

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

2. A polymer comprising recurring units having the general formula (2):
wherein R1 is hydrogen, methyl or trifluoromethyl, R2 and R3 are each independently hydrogen or a straight, branched or cyclic, monovalent hydrocarbon group of 1 to 10 carbon atoms, R2 and R3 may bond together to form an alicyclic group of 5 to 10 carbon atoms, which may be separated by an oxygen atom or have a carbon
chain, with the carbon atom to which they are attached, X1 is a straight, branched or cyclic, divalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent —CH2— may be replaced by —O— or —C(?O)—, k1 is 0 or 1, and Z forms a 5 or 6-membered alicyclic group, which may contain a heteroatom, with the two carbon atoms to which
it is attached.

US Pat. No. 9,385,063

THERMALLY CONDUCTIVE SHEET FEEDER AND METHOD FOR FEEDING THERMALLY CONDUCTIVE SHEET

SHIN-ETSU CHEMICAL CO., L...

1. A thermally conductive sheet feeder wherein an emboss carrier tape provided on its surface with a plurality of pockets,
each having one thermally conductive sheet accommodated therein, and a cover film to protect surface of the emboss carrier
tape are rolled up in a reel form, wherein
the thermally conductive sheet is composed of a reinforcing layer, and a thermally conductive resin layer laminated on one
surface of the reinforcing layer or thermally conductive resin layers laminated on both surfaces of the reinforcing layer,
the thermally conductive resin layers being the same or different; a tacking energy of at least one surface of the thermally
conductive sheet is 70 ?J or less; thickness of the thermally conductive sheet is in the range of 60 ?m or more to 600 ?m
or less; the thermally conductive resin layer contains 300 parts by mass or more of thermally conductive filler relative to
100 parts by mass of a silicone rubber; and

each thermally conductive sheet is accommodated in each pocket of the emboss carrier tape in the thermally conductive sheet
feeder such that the tacking energy of the thermally conductive sheet is the same between a surface of the cover film side
and a surface of the pocket's bottom side, or the tacking energy of the thermally conductive sheet of the cover film side
is lower than that of the pocket's bottom side.

US Pat. No. 9,267,037

SILICONE COMPOSITE PARTICLES, MAKING METHOD, AND COSMETIC COMPOSITION

Shin-Etsu Chemical Co., L...

1. Silicone composite particles comprising: 100 parts by weight of spherical particles of a silicone elastomer having a volume
average particle size of 0.1 to 100 m, coated on their surfaces with 0.5 to 25 parts by weight of a silicone resin based on
organosilsesquioxane units, said silicone resin containing 0.1 to 25 parts by weight of inorganic nano-particles having a
volume average particle size of up to 100 nm, wherein said inorganic nano-particles are selected from the group consisting
of titanium oxide, iron oxide, and zinc oxide, wherein the inorganic nano-particles are dispersed in the silicone, and said
silicone composite particles are prepared by adding an acidic or basic substance and a compound selected from the group consisting
of alkoxysilanes, silanol-containing silanes and partial condensates thereof to a mixed water dispersion of silicone elastomer
spherical particles and inorganic nano-particles, and subjecting the compound to hydrolytic condensation reaction, thereby
coating surfaces of the silicone elastomer spherical particles with a silicone resin having the inorganic nano-particles laden
therein while taking inorganic nanoparticles therein.

US Pat. No. 9,507,262

RESIST TOP-COAT COMPOSITION AND PATTERNING PROCESS

Shin-Etsu Chemical Co., L...

1. A resist top coat composition, used in a patterning process by lithography in which a photoresist film on a wafer is top
coated with the top coat composition, and then exposed and developed, wherein the resist top coat composition contains:
a polymer as a base resin having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown by the
following general formula (1), wherein m is 1 or 2, and p is in the range of 0
a C6-C10 ether solvent; and
a C7-C12 hydrocarbon-based solvent;
wherein the C6-C10 ether solvent is selected from the group of diisopropyl ether, diisobutyl ether, diisopentyl ether, di-n-pentyl
ether, methylcyclopentyl ether, methyl cyclohexyl ether, di-n-butyl ether, di-sec-butyl ether diisopentyl-ether, di-sec-pentyl
ether, di-tert-amyl ether, di-n-hexyl ether, and mixtures thereof; and

wherein the C7-C12 hydrocarbon-based solvent is more than 30% by mass relative to the total of the C6-C10 ether solvent and
the C7-C12 hydrocarbon-based solvent:


US Pat. No. 9,284,408

METHOD FOR PRODUCING POLYALKYLENE GLYCOL DERIVATIVE WITH NARROW MOLECULAR WEIGHT DISTRIBUTION, AND ACETAL GROUP-CONTAINING ALCOHOL COMPOUND FOR USE THEREIN AND ALKALI METAL SALT THEREOF

Shin-Etsu Chemical Co., L...

1. A method for producing a narrow molecular weight distribution polyalkylene glycol derivative having an amino group at an
end represented by a general formula (7) by using a compound represented by the following general formula (2) as a polymerization
initiator:

wherein R1 each independently represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 10 carbon atoms;

R2 represents a linear or branched divalent hydrocarbon group having 1 to 5 carbon atoms;

m each independently represents an integer of 1 to 5; and
M represents sodium or potassium;
H2N—CH2—R2—(OCH2CH2)n—OR3  (7)

wherein R2 is the same as defined in the general formula (2);

R3 represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms; and

n represents an integer of 1 to 450;
comprising the steps of:
a) reacting a compound represented by the formula (2) with ethylene oxide;
b) reacting a reaction product of the step a) with a compound represented by a general formula (8):
R3(OCH2CH2)kX  (8)

wherein R3 is the same as defined in the general formula (7);

k represents an integer of 0 to 5; and
X represents a halogen atom or a leaving group; and
c) reductively aminating a reaction product of the step b).

US Pat. No. 9,238,708

ORGANOSILOXANE-MODIFIED NOVOLAK RESIN AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. An organosiloxane-modified novolak resin consisting of structural units having the formula (1):

wherein R1 is an organosiloxy group having the formula (2):


wherein R3, R4 and R5 are each independently a straight, branched or cyclic alkyl group, aryl group or fluoroalkyl group of 1 to 10 carbon atoms,
X, Y and Z are each independently a single bond or a divalent siloxane structure having the formula (3), with the proviso
that at least one of X, Y and Z is a divalent siloxane structure having the formula (3),


wherein R6 and R7 are each independently a straight, branched or cyclic alkyl group, aryl group or fluoroalkyl group of 1 to 10 carbon atoms,
Me is methyl, m and n each are 0 or a positive number, and m+n is an integer of at least 1, and

R2 is hydrogen or an unsubstituted alkyl or fluoroalkyl or alkoxy group of 1 to 4 carbon atoms.

US Pat. No. 9,460,864

SILICON OXIDE MATERIAL, MAKING METHOD, NEGATIVE ELECTRODE, LITHIUM ION SECONDARY BATTERY, AND ELECTROCHEMICAL CAPACITOR

SHIN-ETSU CHEMICAL CO., L...

1. A silicon oxide material for nonaqueous electrolyte secondary battery negative electrodes, having a cobalt content of 2
to 18 ppm (parts by weight per million parts by weight).

US Pat. No. 9,285,678

SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A sulfonium salt having the general formula (1):

wherein A1 is a straight, branched or cyclic, C1-C10 divalent hydrocarbon group which may be substituted with a heteroatom or separated by a heteroatom,

A2 is a straight, branched or cyclic, C1-C10 divalent hydrocarbon group,

A3 is selected from the group consisting of those having the following formulae:

wherein the broken line denotes a valence bond,
B1 is a Ci-Cio alkylene group or C6-C18 arylene group which may contain an ethereal oxygen atom,

k is 0 or 1,
R1, R2 and R3 are each independently a substituted or unsubstituted, straight or branched C1-C10 alkyl, alkenyl or oxoalkyl group, or a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, or any two or more of R1, R2 and R3 may bond together to form a ring with the sulfur atom.

US Pat. No. 9,255,056

OMEGA-HALO-2-ALKYNAL

Shin-Etsu Chemical Co., L...

1. An ?-halo-2-alkynal represented by formula (1):

wherein X represents a halogen atom and n is an integer from 10 to 15.

US Pat. No. 9,078,836

BLOCK TYPE-MODIFIED ORGANOPOLYSILOXANE, METHOD FOR USING THE ORGANOPOLYSILOXANE, COSMETIC, AND METHOD FOR PRODUCING THE ORGANOPOLYSILOXANE

SHIN-ETSU CHEMICAL CO., L...

1. A block type organopolysiloxane represented by the formula (1),

wherein each R1 independently represents a monovalent hydrocarbon group having from 1 to 12 carbons; R2 represents any of a hydrogen atom, a monovalent hydrocarbon group having 1 to 15 carbons, and a monovalent acyl group having
2 to 7 carbons; R3 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 4 carbons; X represents a divalent hydrocarbon group
having 2 to 15 carbons; n represents an integer of 1 or more; m represents an integer of 1 or more; s represents an integer
of 0 to 100; t represents an integer of 0 to 50; z represents an integer of 0 to 50; s+t+z ?1; and each R4 independently represents a hydrogen atom, a hydroxyl group, an alkoxy group, or an organic group represented by the following
general formula (2),


wherein Y represents a hydrogen atom, or a monovalent hydrocarbon group having 2 to 15 carbons and a carbon-carbon double
bond.

US Pat. No. 9,272,232

POWDER ANTIFOAMING AGENT AND METHOD FOR PRODUCING SAME

Shin-Etsu Chemical Co., L...

1. A powder antifoaming agent comprising:
(A) a hydrophobic organopolysiloxane having a viscosity of 10 to 100,000 mm2/s at 25° C.,

(B) finely divided silica,
(C) a surfactant, and
(D) a water-soluble encapsulant comprising maltodextrin, lactose or a mixture thereof,
wherein the powder antifoaming agent is prepared by mixing components (A) and (B) to form a silicone oil compound, dispersing
the silicone oil compound and component (D) in water in the presence of component (C), and spray drying the water dispersion,
the silicone oil compound being encapsulated in a shell of component (D).

US Pat. No. 9,223,205

ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. An acid generator that generates a sulfonic acid selected from the following formulae in response to high-energy beam or
heat,

US Pat. No. 9,162,967

SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

2. The sulfonium salt of claim 1, wherein the sulfonium salt has a structure of general formula (2A), (2B) or (2C):
wherein R0 is a C1-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, R1 is hydrogen, methyl or trifluoromethyl, L1, L2 and L3 are each independently a single bond or a C1-C20 straight, branched or cyclic, divalent hydrocarbon group which may be substituted with or separated by a heteroatom, W is
a C3-C30 trivalent aliphatic or aromatic ring, n is 0 or 1, p is an integer of 0 to 5, q is an integer of 0 to 4, and r is an integer
of 0 to 3, L22 is a single bond or a C1-C20 straight, branched or cyclic, divalent hydrocarbon group which may be substituted with or separated by a heteroatom, A is
hydrogen or trifluoromethyl, and m is 0 or 1.

US Pat. No. 9,146,468

RESIST UNDERLAYER FILM COMPOSITION AND PATTERNING PROCESS USING THE SAME

SHIN-ETSU CHEMICAL CO., L...

1. A resist underlayer film composition, the resist underlayer film composition used in a patterning process to form a pattern
on a substrate wherein a resist underlayer film is formed on the substrate by using the resist underlayer film composition,
at least a resist upper layer film is formed on the resist underlayer film by using a photoresist composition, after the resist
upper layer film is exposed and developed to form a pattern, the pattern formed on the resist upper layer film is transferred
to the resist underlayer film, and then the pattern transferred to the resist underlayer film is transferred to the substrate;
wherein the resist underlayer film composition contains a truxene compound having a substituted or an unsubstituted naphthol
group as shown by the following general formula (1),
provided that: in the general formula (1), R1, R4, R7, R10, R11, and R12 represent the same or different groups of a hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 10 carbon
atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, a hydroxy group, an alkoxy
group, an acyloxy group, a cyano group, a nitro group, an amino group, or a halogen atom; R2, R5, and R9 represent the same or different groups of a hydrogen atom, a linear, a branched, or a cyclic alkyl group having 1 to 6 carbon
atoms, an acyl group, a glycidyl group, or an acid-labile group; R3, R6, and R9 represent the same or different groups of a hydrogen atom, a hydroxy group, a linear, a branched, or a cyclic alkyl group
having 1 to 10 carbon atoms, an alkoxy group, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10
carbon atoms, or an aryl group having 6 to 20 carbon atoms; and p, q, and r represent an integer of 1 to 6.

US Pat. No. 9,139,603

[3-(2-NORBORNYL)-2-NORBORNYL]SILANE COMPOUND AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A [3-(2-norbornyl)-2-norbornyl]silane compound having the general formula (1):

wherein R1 is each independently a substituted or unsubstituted monovalent hydrocarbon radical of 1 to 10 carbon atoms, X is a halogen
atom or an organoxy radical OR2, R2 is each independently a substituted or unsubstituted monovalent hydrocarbon radical of 1 to 10 carbon atoms, is a single bond, n is 1 or 2 when X is halogen, and n is 0, 1 or 2 when X is an organoxy radical.

US Pat. No. 9,493,597

POLYMER COMPOUND HAVING A SPECIFIC SUPER STRONGLY ACIDIC SULFO GROUP

SHIN-ETSU CHEMICAL CO., L...

1. A polymer compound which comprises both repeating unit “a” represented by the following general formula (1-1) and repeating
unit “b” represented by the following general formula (1-2), and has a weight average molecular weight in the range of 1,000
to 500,000,

wherein R1 represents a hydrogen atom or a methyl group, R2 represents a single bond, an ester group, or a linear, branched, or cyclic hydrocarbon group having 1 to 12 carbon atoms which
may have either or both of an ether group and an ester group, Z represents a phenylene group, a naphthylene group, or an ester
group, and “a” and “b” satisfy 0
wherein “a” represents the relative fractional amount of the repeating units of general formula (1-1) in the polymer compound,
and “b” represents the relative fractional amount of the repeating units of general formula (1-2) in the polymer compound.

US Pat. No. 9,449,856

ENCAPSULANT WITH BASE FOR USE IN SEMICONDUCTOR ENCAPSULATION, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. An encapsulant with a base for use in semiconductor encapsulation, for collectively encapsulating a device mounting surface
of a substrate on which semiconductor devices are mounted, or a device forming surface of a wafer on which semiconductor devices
are formed, comprising
the base being a support substrate composed of an organic resin substrate or a silicon wafer, an encapsulating resin layer
composed of an uncured or semi-cured thermosetting resin formed on one surface of the base, and a surface resin layer formed
on the other surface of the base.

US Pat. No. 9,351,344

CERAMIC HEATER

SHIN-ETSU CHEMICAL CO., L...

1. A ceramic heater comprising:
a support base made of an electrically insulating ceramic material,
a heating element pattern made of an electrically conductive material laid over said support base, and
a cover layer made of an electrically insulating ceramic material laid over said heating element pattern,
wherein said ceramic heater has electricity supply terminals each having a through hole for fixing terminal devices and an
exposed upper surface of an electrically conductive layer, and

wherein in vicinities of said terminals an upper surface of said cover layer is flush with said exposed upper surface of said
electrically conductive layer thereby forming a flat plane.

US Pat. No. 9,335,632

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A positive resist composition comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl
group substituted with an acid labile group and recurring units represented by the general formula (1), and having a weight
average molecular weight of 1,000 to 500,000 as a base resin,
wherein R1 is hydrogen or methyl, R2 is hydrogen or methyl, m and n each are 1 or 2.

US Pat. No. 9,316,902

PHOTOMASK-FORMING GLASS SUBSTRATE AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A square-shaped glass substrate for a photomask, the glass substrate having a pair of major surfaces and a patterned light-shielding
film on one surface of the substrate which is chucked at chucking portions in an exposure tool, wherein
the major surface where the chucking portions are disposed is delineated by four peripheral sides,
two strip regions are defined on the major surface near a pair of opposed sides such that each region spans between 2 mm and
10 mm inward of the side and extends parallel to the side, but excludes end portions extending 2 mm inward from the longitudinally
opposed ends of the side,

a least squares plane is computed for each of the two strip regions, based on a distance from any common reference plane to
a coordinate point within the strip region,

the angle included between normal lines to the two least squares planes of the two strip regions is less than or equal to
10 seconds,

on the assumption that F1 is the least squares plane of one strip region, F2 is the least squares plane of the other strip region, F3 is a least squares plane for a major surface region coextensive with the major surface, excluding peripheral portions extending
2 mm inward from the four sides, but including the two strip regions, a plane F3? parallel to F3 is disposed such that the center of a strip region-equivalent region of F1 and the center of a strip region-equivalent region of F2 may fall on the same side relative to F3?, and the two strip regions have a height difference represented by the absolute value |D1?D2| of the difference between a distance D1 of a normal line drawn from the center of a strip region-equivalent region of F1 to plane F3? and a distance D2 of a normal line drawn from the center of a strip region-equivalent region of F2 to plane F3?, and

the height difference between the two strip regions is less than or equal to 0.5 ?m.
US Pat. No. 9,274,425

RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A resist composition comprising a metal compound obtained from reaction of at least one metal compound selected from the
group consisting of a metal compound having the general formula (A-1) and a metal compound obtained from (partial) hydrolysis
or condensation, or (partial) hydrolytic condensation of the metal compound of formula (A-1), with a di- or trihydric alcohol
having the general formula (A-2),
M(OR1A)4  (A-1)

wherein M is an element selected from the group consisting of titanium, zirconium, and hafnium, and R1A is a straight or branched C1-C6 alkyl group,

R2A(OH)m  (A-2)

wherein m is 2 or 3, when m is 2, R2A is a divalent group selected from the group consisting of a straight, branched or cyclic C2-C20 alkylene, alkenylene, alkynylene or aralkylene group, a straight or branched alkylene group substituted with a cyclic alkyl,
cyclic alkenyl or aryl moiety, and a straight or branched alkylene group having an intervening cyclic alkylene, cyclic alkenylene
or arylene moiety, said divalent group may have a cyano moiety or be separated by a carbonyl, ester, ether, thiol or NR moiety
wherein R is hydrogen or a straight or branched C1-C6 alkyl group, and when m is 3, R2A is a trivalent group corresponding to the divalent group with one hydrogen eliminated.

US Pat. No. 9,216,607

SCREEN PRINTING PLATE FOR SOLAR CELL AND METHOD FOR PRINTING SOLAR CELL ELECTRODE

SHIN-ETSU CHEMICAL CO., L...

1. A screen printing plate for use in printing a conductive paste to simultaneously form a bus bar electrode and a plurality
of finger electrodes on a solar cell, wherein the screen printing plate includes a bus bar electrode opening and a plurality
of finger electrode openings, wherein the finger electrode openings have an opening width of less than 80 ?m, and the screen
printing plate has a plurality of blocked zones in the bus bar electrode opening, formed only at positions aligned with the
finger electrode openings.

US Pat. No. 9,207,534

NITROGEN-CONTAINING MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

10. A chemically amplified positive resist composition comprising 100 parts by weight of a polymer comprising recurring units
(a) having the formula (2), at least one of recurring units (b) and (c) represented by the general formula (3) and having
an acid labile group-substituted carboxyl and/or hydroxyl group, and recurring units (d) having an adhesive group selected
from among hydroxyl, carboxyl, lactone ring, carbonate, thiocarbonate, carbonyl, cyclic acetal, ether, ester, sulfonic acid
ester, cyano, amide, and —O—C(?O)-G- wherein G is sulfur or NH, 50 to 10,000 parts by weight of an organic solvent, 0.01 to
100 parts by weight of an acid generator in the form of a sulfonium salt having the general formula (15), 0 to 100 parts by
weight of a basic compound, and 0 to 10 parts by weight of a surfactant,
wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, R2 is hydrogen or a straight, branched or cyclic, mono or divalent hydrocarbon group of 1 to 10 carbon atoms, R3 is an acid labile group of 1 to 15 carbon atoms, A1 is a straight, branched or cyclic, divalent hydrocarbon group of 1 to 10 carbon atoms, A2 is a straight, branched or cyclic, di or trivalent hydrocarbon group of 1 to 10 carbon atoms, A2 and R2 may bond together to form a ring with the adjacent nitrogen atom, k1 is 1, R3 is an acid labile group selected from the following:
wherein the broken line denotes a valence bond, and “a” is a number in the range: 0 wherein R4 and R6 each are hydrogen or methyl; R5 and R8 each are an acid labile group; R7 is a straight, branched or cyclic C1-C10 alkylene group or a trivalent form of the alkylene group with one hydrogen eliminated, which may contain an ether or ester
moiety, or a phenylene or naphthylene group; Y is a single bond or —C(?O)—O—R9—; R9 is a straight, branched or cyclic C1-C10 alkylene group which may contain an ether or ester moiety, or a phenylene or naphthylene group; Z is a single bond or —C(?O)—O—R10—; R10 is a straight, branched or cyclic C1-C10 alkylene group which may contain an ether or ester moiety, or a phenylene or naphthylene group; the phenylene and naphthylene
groups may be substituted with fluorine, trifluoromethyl, cyano, amide or C1-C6 alkyl or alkoxy radical; n is 1 or 2, b and c are numbers in the range: 0?b<1.0, 0?c<1.0, and 0 wherein Rp5, Rp6, and Rp7 are each independently a straight, or branched C1-C10 alkyl, alkenyl or oxoalkenyl group which may contain fluorine, hydroxyl or ether bond, or a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, alternatively, any two or more of Rp5, Rp6, and Rp7 may bond together to form a ring with the sulfur atom, Rp8 is hydrogen or trifluoromethyl, Rp9 is a straight, branched or cyclic C6-C30 monovalent hydrocarbon group which may contain a heteroatom.
US Pat. No. 9,441,133

ORGANIC RESIN LAMINATE, METHODS OF MAKING AND USING THE SAME, AND ARTICLES COMPRISING THE SAME

EXATEC, LLC, Wixom, MI (...

1. An organic resin laminate having weather resistance and mar resistance, comprising an organic resin substrate and a multilayer
coating system on a surface of the substrate,
the multilayer coating system including an outermost layer (I) which is a hard film resulting from plasma polymerization of
an organosilicon compound and an intermediate layer (II) which is a cured film formed from a composite coating composition
(2), the intermediate layer (II) having one surface disposed contiguous to the outermost layer and another surface disposed
contiguous to the organic resin substrate,

wherein the composite coating composition (2) comprises
(2-A) an inorganic oxide nanoparticle;
(2-B) a vinyl copolymer; and
(2-C) a solvent;
wherein the inorganic oxide nanoparticle comprises at least one of silica, zinc oxide, titanium oxide, and cerium oxide;
wherein the vinyl copolymer has an organic UV-absorptive group and a reactive group; and
wherein the reactive group is selected from among alkoxysilyl, hydroxyl, epoxy, carboxylic acid and amino groups;
wherein the outermost layer (I) includes an inner sub-layer and an outer sub-layer, wherein the inner sub-layer has a refractive
index in the range of 1.449 to 1.463 and the outer sub-layer has a refractive index in the range of 1.430 to 1.434;

wherein the inner sub-layer has a nano-indentation hardness in the range of 1.616 to 1.676 GPa and the outer sub-layer has
a nano indentation hardness in the range of 2.265 to 2.667GPa; and

wherein the inner sub-layer is contiguous with the intermediate layer (II).

US Pat. No. 9,377,689

SILICONE STRUCTURE-BEARING POLYMER, NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, PATTERNING PROCESS, AND ELECTRIC/ELECTRONIC PART-PROTECTING FILM

SHIN-ETSU CHEMICAL CO., L...

15. 4,4-bis(4-hydroxy-3-allylphenyl)pentanol represented by the formula (7):

US Pat. No. 9,362,145

SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING THE SAME

SHIN-ETSU CHEMICAL CO., L...

1. A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, the method
comprising:
an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor
device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the
other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted;

an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no
semiconductor device is mounted by molding a thermosetting resin blended with an inorganic filler with the mold on which the
substrates are arranged; and

a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus,
wherein:
the inorganic filler has a maximum particle diameter of 75 ?m or less,
an amount of the inorganic filler is between 100 and 1,300 parts by weight with respect to 100 parts by weight of the thermosetting
resin,

the substrate on which a semiconductor device is mounted and the substrate on which no semiconductor device is mounted each
have an area of 2,000 mm2 or more and are collectively sealed,

the substrate on which no semiconductor device is mounted has a linear expansion coefficient of 25 ppm/° C. or less and a
thickness of 20 ?m to 1 mm, and

concentrations of each of halogen ions and alkali ions in the thermosetting resin are 10 ppm or less based on an extraction
at 120° C. where 10 g of the thermosetting resin is added into 50 ml of ion exchange water, which is then hermetically closed
and left to stand still in an oven at 120° C. for 20 hours, followed by extraction heating.

US Pat. No. 9,316,915

NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A chemically amplified negative resist composition comprising a polymer as a base resin comprising recurring units (a)
of the general formula (1) and recurring units of at least one type selected from the group consisting of a vinylnaphthalene
(b1), indene (b2), acenaphthylene (b3), chromone (b4), coumarin (b5), norbornadiene (b6), and vinylcarbazole (b7), as represented
by the general formula (2), the polymer having a weight average molecular weight of 1,000 to 500,000, an organic solvent,
and an acid generator,
wherein R1 is hydrogen or methyl, X is a single bond or —C(?O)—O—R4—, R2 is a single bond or C1-C4 alkylene group, R3 is a linear C2-C8 alkylene group, R4 is a single bond or C1-C4 alkylene group,
wherein R5 is hydrogen or methyl, m is an integer of 0 to 2, n is an integer of 0 to 5, R110 to R116 are each independently hydrogen, C1-C30 alkyl, partially or entirely halo-substituted alkyl, the alkyl and halo-substituted alkyl optionally having an alkyl-substituted
or unsubstituted hydroxyl or carboxyl group, hydroxyl, C1-C4 alkoxy, acyl, acyloxy, alkoxycarbonyl, C6-C10 aryl, halogen, or 1,1,1,3,3,3-hexafluoro-2-propanol group, Y is a single bond, —O—, —S—, —C(?O)—O—R6—, or —C(?O)—NH—R6—, R6 is a single bond or C1-C4 alkylene group, X0 is methylene, oxygen or sulfur atom; b1 to b7 are numbers in the range: 0?b1<1.0, 0?b2<1.0, 0?b3<1.0, 0?b4<1.0, 0?b5<1.0,
0?b6<1.0, 0?b7<1.0, 0
US Pat. No. 9,289,372

COSMETIC

SHIN-ETSU CHEMICAL CO., L...

1. A cosmetic comprising a polymer (A) having a content of an oxyalkylene unit and/or a glycerin unit of 0.5% by mass or more
and under 5.0% by mass; and a polymer (B) having a content of an oxyethylene unit and/or a glycerin unit of 5.0% by mass or
more and 20.0% by mass or less, the polymer (A) and the polymer (B) being a crosslinking organopolysiloxane polymer obtained
by reacting organohydrogen polysiloxane having two or more hydrogen atoms bonded to a silicon atom in one molecule and polyoxyalkylene
and/or polyglycerin having two or more aliphatic unsaturated bonds in one molecule in the presence of a catalyst for a hydrosilylation
reaction, wherein a mass ratio of the polymer (A) to the polymer (B) is 5:95 to 60:40.

US Pat. No. 9,188,852

PHOTOMASK BLANK, METHOD FOR MANUFACTURING PHOTOMASK, AND METHOD FOR MANUFACTURING PHASE SHIFT MASK

SHIN-ETSU CHEMICAL CO., L...

1. A photomask blank, comprising:
a light-shielding film having a monolayer structure or a multilayer structure provided on a transparent substrate,
wherein said light-shielding film has an optical density of 2 or higher and 4 or lower and has a reflection-preventing function,
said light-shielding film comprises at least one layer made of a chromium-containing material, and
said at least one layer made of a chromium-containing material is made of a chromium-containing material including tin.

US Pat. No. 9,401,290

SEMICONDUCTOR APPARATUS AND METHOD FOR PRODUCING THE SAME

SHIN-ETSU CHEMICAL CO., L...

1. A method for producing a semiconductor apparatus with a mold including an upper mold half and a lower mold half, the method
comprising:
an arranging step of arranging on one of the upper mold half and the lower mold half of the mold a substrate on which a semiconductor
device is mounted, the mold being kept at a room temperature or heated to a temperature up to 200° C., and arranging on the
other of the upper mold half and the lower mold half a substrate on which no semiconductor device is mounted;

an integrating step of integrating the substrate on which the semiconductor device is mounted and the substrate on which no
semiconductor device is mounted by molding a thermosetting resin blended with an inorganic filler with the mold on which the
substrates are arranged; and

a step of dicing the integrated substrates taken out of the mold to obtain an individualized semiconductor apparatus,
wherein:
the inorganic filler has a maximum particle diameter of 75 ?m or less,
an amount of the inorganic filler is between 100 and 1,300 parts by weight with respect to 100 parts by weight of the thermosetting
resin,

the substrate on which a semiconductor device is mounted and the substrate on which no semiconductor device is mounted each
have an area of 2,000 mm2 or more and are collectively sealed,

the substrate on which no semiconductor device is mounted has a linear expansion coefficient of 25 ppm/° C. or less and a
thickness of 20 ?m to 1 mm, and

concentrations of each of halogen ions and alkali ions in the thermosetting resin are 10 ppm or less based on an extraction
at 120° C. where 10 g of the thermosetting resin is added into 50 ml of ion exchange water, which is then hermetically closed
and left to stand still in an oven at 120° C. for 20 hours, followed by extraction heating.

US Pat. No. 9,365,746

SILICONE COMPOSITION, RELEASE PAPER OR FILM, AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. An addition curing silicone composition for release paper or film, comprising
(A) 100 parts by weight of organopolysiloxane containing at least two alkenyl groups in a molecule and having a viscosity
of at least 0.04 Pa-s at 25° C.,

(B) 0.1 to 10 parts by weight of an adhesion promoter compound having the following formula:

(C) 0.1 to 20 parts by weight of an organohydrogenpolysiloxane containing at least three silicon-bonded hydrogen atoms in
a molecule,

(D) a catalytic amount of a platinum group metal base catalyst, and
(E) an amount of an optional organic solvent.

US Pat. No. 9,346,990

TEMPORARY ADHESIVE MATERIAL FOR WAFER PROCESSING, WAFER PROCESSING LAMINATE, AND METHOD FOR MANUFACTURING THIN WAFER USING SAME

SHIN-ETSU CHEMICAL CO., L...

1. A temporary adhesive material for a wafer processing, the temporary adhesive material being used for temporarily bonding
a supporting substrate to a wafer having a front surface including a circuit formed thereon and a back surface to be processed,
comprising: a first temporary adhesive layer composed of a layer (A) of a silicone-modified styrene base thermoplastic elastomer;
and a second temporary adhesive layer composed of a thermosetting polymer layer (B) laminated on the first temporary adhesive
layer, wherein the layer (A) is capable of releasably adhering to the front surface of the wafer, and the layer (B) is capable
of releasably adhering to the supporting substrate.
US Pat. No. 9,266,970

HYDROXYPROPYLMETHYLCELLULOSE HAVING HIGH THERMAL GEL STRENGTH, METHOD FOR PRODUCING THE SAME AND FOOD COMPRISING THE HYDROXYPROPYLMETHYLCELLULOSE

Shin-Etsu Chemical Co., L...

1. A method for producing hydroxypropylmethylcellulose having an average substitution degree of a methoxy group of 1.0 to
1.6 per glucose unit, an average substitution degree of a hydroxypropoxy group (C) of 0.2 to 0.3 per glucose unit, and an
A/B value of 0.305 or greater wherein A represents a substitution degree of a methoxy group directly substituted for a hydroxy
group on carbon at position 6 in a glucose unit free from a hydroxypropoxy group-substituted hydroxy group, B represents a
substitution degree of a methoxy group per glucose unit, and the A/B value represents a value of A divided by B, the method
comprising at least the steps of:
reacting a pulp with an alkali to obtain alkali cellulose; and
adding a methyl etherification agent and a hydroxypropyl etherification agent to react with the alkali cellulose to obtain
hydroxypropylmethylcellulose, wherein addition rates of the methyl etherification agent and the hydroxypropyl etherification
agent are adjusted such that a reacted portion of the hydroxypropyl etherification agent is less than 50% at the time when
a reacted portion of the methyl etherification agent is 50% or more, or such that a reacted portion of the hydroxypropyl etherification
agent is less than 30% at the time when a reacted portion of the methyl etherification agent is 30% or more, and wherein the
addition of the hydroxypropyl etherification agent is initiated at a time when a reacted portion of the methyl etherification
agent becomes 5% or more, and after 10 to 60 minutes from the initiation of addition of the methyl etherification agent so
as to obtain a C/D value of 0.28 or less wherein C represents the average substitution degree of a hydroxypropoxy group per
glucose unit of the hydroxypropylmethylcellulose, D represents the number of moles of the hydroxypropyl etherification agent
per glucose unit of the hydroxypropylmethylcellulose, and the C/D value represents a value of C divided by D, and wherein
a molar ratio of the addition rate of the methyl etherification agent to the addition rate of the hydroxypropyl etherification
agent is 3 or more, and wherein the hydroxypropylmethylcellulose has a thermal gelation temperature from 64° C. to 75° C.

US Pat. No. 9,164,392

DEVELOPER AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A developer for photosensitive resist materials comprising an aqueous solution containing 0.1 to 20% by weight of a substituted
or unsubstituted benzyltrialkylammonium hydroxide and 0.0001 to 5% by weight of an acetylene alcohol having the general formula
(AA-1):
wherein R5 to R8 are each independently C1-C20 alkyl, R9 and R10 are each independently C1-C10 alkylene, a and b are such integers that the sum a+b is 0 to 60.

US Pat. No. 9,163,121

POLYCARBONATE AND POLYSILOXANE BLOCK COPOLYMER AND FLAME RETARDANT RESIN COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A molded product comprising a molded flame retardant resin composition which comprises (A) a polycarbonate and polysiloxane
block copolymer comprising 1 to 50 percent by mass of a siloxane portion derived from a polysiloxane block represented by
the following formula (I) and 50 to 99 percent by mass of a carbonate portion derived from a polycarbonate block represented
by the following formula (II),

wherein, each of R1 and R2 independently represent an organic group selected from a methyl group, a phenyl group and a vinyl group;

1 to 20% by mol of the R1 and R2 groups in the copolymer are vinyl groups;

“n” represents an integer of from 10 to 100;
Ar represents a divalent aromatic group, which may be substituted by a methyl group, an ethyl group, or a methoxy group; and
A represents a group selected from a divalent hydrocarbon group having 1 to 3 carbon atoms, a halogenated hydrocarbon group
having 1 to 3 carbon atoms, —S—, —SS—, —S(?O)—, —SO2— and —O—.

US Pat. No. 9,090,502

NANOIMPRINT-MOLD RELEASE AGENT, SURFACE TREATMENT METHOD, AND NANOIMPRINT MOLD

SHIN-ETSU CHEMICAL CO., L...

1. A nanoimprint-mold release agent comprising an alkoxysilane compound represented by the following general formula (1) or
a silazane compound represented by the following general formula (2):
wherein Rf and Rf? are each independently a fluoroalkyl group of 1 to 10 carbon atoms; R1 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms; R2 and R3 are each independently methyl group or ethyl group; X and Y are each independently an ether linkage or an ester linkage; a
and b are each 0 or 1; m, n, and p are each an integer of 0 to 6; q is an integer of 1 to 6 and r is an integer of 0 to 2,
wherein Rf and Rf? are each independently a fluoroalkyl group of 1 to 10 carbon atoms; R1 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms; R4 and R5 are each independently an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms in which a part or all of hydrogen
atoms bonded to carbon atoms may be substituted; R6 is a hydrogen atom or an aliphatic monovalent hydrocarbon group of 1 to 6 carbon atoms in which a part or all of hydrogen
atoms bonded to carbon atoms may be substituted; a and b are each 0 or 1; m, n, and p are each an integer of 0 to 6; q is
an integer of 1 to 6 and s is 1 or 2.

US Pat. No. 9,266,742

METHOD FOR PRODUCING TRICHLOROSILANE

Shin-Etsu Chemical Co., L...

1. A method for producing high-purity trichlorosilane from a mixture comprising methyldichlorosilane (CH3HSiCl2), tetrachlorosilane (SiCl4), and trichlorosilane (HSiCl3), said method comprising of:
(A) distilling said mixture to obtain a fraction having a higher content of methyldichlorosilane than a methyldichlorosilane
content of said mixture before said distilling;

(B) heating said fraction having a higher content of methyldichlorosilane to disproportionate chlorine between methyldichlorosilane
and tetrachlorosilane to convert methyldichlorosilane into methyltrichlorosilane (CH3SiCl3), to obtain a disproportionated fraction; and

(C) distilling said disproportionated fraction to separate trichlorosilane,
wherein either:
(a) said heating is not performed in the presence of a catalyst;
(b) said heating comprises heating in a heated vessel with a fluidized bed of silicon comprising copper chloride as a catalyst
under a reducing atmosphere comprising hydrogen; or

(c) said heating comprises heating to a temperature of from 400 to 600° C.
US Pat. No. 9,222,063

EXTRUSION OR INJECTION MOLDING MACHINE PURGING COMPOSITION AND METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A method for cleaning an extrusion or injection molding machine by removing a contaminant therefrom, comprising the step
of extrusion or injection molding a purging composition through the machine at a temperature equal to or higher than the melting
point of the contaminant,
said purging composition comprising a cellulose ether and at least one solvent selected from the group consisting of a water-soluble
polyhydric alcohol, polyhydric alcohol ether, polyhydric alcohol ester, and ethanolamine.

US Pat. No. 9,217,059

METHOD FOR PREPARING A COMPOSITION COMPRISING PERFLUOROPOLYETHER HAVING A CARBOXYL GROUP AT ONE TERMINAL

SHIN-ETSU CHEMICAL CO., L...

1. A method for increasing a ratio of a perfluoropolyether having a carboxyl group at one terminal, relative to a total amount
of the perfluoropolyether having a carboxyl group at one terminal and a perfluoropolyether having carboxyl groups at both
terminals in a composition comprising these perfluoropolyethers, wherein the method comprises a step of subjecting the composition
to chromatography in which a moving phase is a supercritical or subcritical state carbon dioxide and a stationary phase is
silica gel, and the moving phase is at a constant temperature, T, in a range of from 25 degrees C. to 150 degrees C. and a
constant pressure, P, in a range of from 7 MPa to 30 MPa to thereby collect a fraction containing the perfluoropolyether having
a carboxyl group at one terminal at a higher ratio.

US Pat. No. 9,213,235

PATTERNING PROCESS, RESIST COMPOSITION, POLYMER, AND MONOMER

SHIN-ETSU CHEMICAL CO., L...

12. A polymer comprising recurring units (a1) of the general formula (1) and having a weight average molecular weight of 1,000
to 100,000,

wherein R1 is hydrogen or methyl, R2 is hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent
—CH2— may be substituted by —O— or —C(?O)—, R3 is an acid labile group, R4 is hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 20 carbon atoms in which a constituent
—CH2— may be substituted by —O— or —C(?O)—, and a1 is a number in the range: 0
US Pat. No. 9,156,864

HYDROSILYLATION METHOD, METHOD FOR PRODUCING ORGANOSILICON COMPOUND, AND ORGANOSILICON COMPOUND

SHIN-ETSU CHEMICAL CO., L...

1. A hydrosilylation method wherein
(i) an olefin compound having a carbon-carbon unsaturated bond selected from the group consisting of: an olefin compound selected
from the group consisting of allyl isocyanate, triallyl isocyanurate, 1,3-butadiene, isoprene, 1,4-pentadiene, 1,5-hexadiene,
1,6-heptadiene, 1,7-octadiene, 1,8-nonadiene, 1,9-decadiene, divinylcyclohexane, trivinylcyclohexane, diallylcyclohexane,
triallylcyclohexane, styrene, allyl benzene, and allyl phenol; a diene compound of formula (4):

CH2?C(R4)—(CH2)m—C(R4)?CH2  (4)
wherein R4 is independently hydrogen atom or a monovalent hydrocarbon group and m is an integer of 0 to 20; and a compound containing
an aliphatic ring structure and/or an aromatic ring structure having vinyl group or allyl group, and
(ii) a compound having a hydrogensilyl group selected from the group consisting of hydrogentrimethoxysilane, hydrogenmethyldimethoxysilane,
hydrogendimethylmethoxysilane, hydrogentriethoxysilane, hydrogenmethyldiethoxysilane, hydrogendimethylethoxysilane, hydrogentri(2-propenoxy)silane,
hydrogenmethyldi(2-propenoxy)silane, hydrogendimethyl(2-propenoxy)silane, organopolysiloxane and organosilsesquioxane having
a hydrosilyl group produced by hydrolytic condensation of one of said silane monomers, 1,3,5,7-tetramethyltetrasiloxane, 1,1,3,3-tetramethyldisiloxane,
pentamethyldisiloxane, and dimethyl silicone polymer containing 3 to 100 silicon atoms having a hydrosilyl group on its side
chain or at its terminal
are reacted in the presence of an organoammonium salt compound of formula (5):
R5—[C(?O)O?.NR64+]h  (5)
wherein R5 is an h-valent hydrocarbon group containing 1 to 20 carbon atoms, R6 is independently a hydrogen atom or a monovalent hydrocarbon group containing 1 to 6 carbon atoms, and h is 1 or 2 by using
catalytic action of platinum and/or its complex compound to form a hydrosilylated derivative of said olefin compound.
US Pat. No. 9,139,700

METHOD FOR PREPARING A POLYORGANOSILOXANE

SHIN-ETSU CHEMICAL CO., L...

1. A method for preparing a polyorganosiloxane, wherein the method comprises a step of condensation reacting at least one
organic silicon compound having at least one —OX group bonding to a silicon atom in the molecule without water, wherein X
is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms or an alkoxyalkyl group having 2 to 10 carbon atoms, in the
presence of a catalyst, wherein
(i) said organic silicon compound comprises
(A) at least one organic silicon compound having at least one silanol group in the molecule, and
(B1) at least one organic silicon compound having at least one —OX group bonding to a silicon atom in the molecule, wherein
X is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms or an alkoxyalkyl group having 2 to 10 carbon atoms; or

(ii) said organic silicon compound comprises one or more organic silicon compounds having at least one silanol group and at
least one —OX? group bonding to a silicon atom in the molecule, wherein X? is an alkyl group having 1 to 10 carbon atoms or
an alkoxyalkyl group having 2 to 10 carbon atoms,
wherein the catalyst is at least one selected from the group consisting of hydroxides of rare earth elements, hydroxides of
iron group elements, hydroxides of platinum group elements, zirconium (IV) hydroxide, copper (II) hydroxide, gold (III) hydroxide,
cadmium (II) hydroxide, indium (III) hydroxide, thallium (I) hydroxide, lead (II) hydroxide and bismuth (III) hydroxide.

US Pat. No. 9,122,155

SULFONIUM SALT, RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A sulfonium salt represented by the following general formula (1a),
wherein R represents a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms at least one or
more of hydrogen atoms of which are substituted by a fluorine atom, and R0 represents a hydrogen atom, or a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 30 carbon atoms which
may be substituted by a halogen atom, or interposed by a heteroatom.

US Pat. No. 9,074,101

SILOXANE-GRAFTED SILICA, TRANSPARENT SILICONE COMPOSITION, AND OPTOELECTRONIC DEVICE ENCAPSULATED THEREWITH

NIIGATA UNIVERSITY, Niig...

1. A highly transparent silicone composition, which is addition or condensation curable, comprising
100 parts by weight of a total of silane or siloxane components, and
5 to 400 parts by weight of silica particles having an organopolysiloxane grafted to surfaces thereof by previously admitting
100 parts by weight of silica particles and 10 to 50 parts by weight of the organopolysiloxane in a solvent and heating the
mixture under reflux at a temperature of 50 to 200° C. for 1 to 50 hours, said organopolysiloxane having the general formula
(1a):


wherein R1 is each independently a substituted or unsubstituted monovalent hydrocarbon group of 1 to 10 carbon atoms but not an alkoxy
group, R2 is methyl or ethyl, a is an integer of 3 to 50.

US Pat. No. 9,069,245

NEAR-INFRARED ABSORPTIVE LAYER-FORMING COMPOSITION AND MULTILAYER FILM

SHIN-ETSU CHEMICAL CO., L...

1. A near-infrared absorptive layer-forming composition consisting of:
(A) at least one near-infrared absorbing dye having the formula (1):
wherein
R1 and R2 are each independently a monovalent C1-C20 hydrocarbon group which may contain a heteroatom,

k is an integer of 0 to 5,
m is 1,
n is 1 or 2,
Z is oxygen, sulfur or C(R?)(R?), R? and R? are each independently hydrogen or a monovalent C1-C20 hydrocarbon group which may contain a heteroatom, and

X? is an anion of the formula (1-3):

wherein Rc1, Rc2 and Rc3 are each independently fluorine or a monovalent C1-C20 hydrocarbon group which may contain a heteroatom, Rc1 and Rc2 may bond together to form a ring with the linkage to which they are attached, the ring-forming Rc1—Rc2 being a single bond or a divalent hydrocarbon group of 1 to 20 carbon atoms in total which may contain a heteroatom;
(B) at least one polymer comprising repeat units capable of undergoing crosslinking reaction in the presence of an acid, said
repeat units having an oxirane structure and/or oxetane structure;

(C) at least one solvent;
(D) an acid generator;
(E) a crosslinker; and
(F) a surfactant,wherein, per 100 parts by weight of the overall polymer, the near-infrared absorbing dye is used in an amount of 49 to 100
parts by weight, the organic solvent is added in an amount of 900 to 20,000 parts by weight, the acid generator is added in
an amount of 0.1 to 50 parts by weight, the crosslinker is added in an amount of 0 to 50 parts by weight, and the surfactant
is added in an amount of up to 2 parts by weight.

US Pat. No. 9,052,593

RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A resist composition comprising as a base resin a polymer comprising recurring units (a), acid labile group-substituted
recurring units (b1) and/or (b2) represented by the general formula (2), recurring units (c) having an adhesive group selected
from the class consisting of hydroxyl (exclusive of hydroxyl in formula (2)), carboxyl, lactone ring, carbonate, thiocarbonate,
carbonyl, cyclic acetal, ether, ester, sulfonic acid ester, cyano, amide, and —O—C(?O)-G- wherein G is sulfur or NH, and recurring
units (d) of at least one type selected from sulfonium salt units (d1) to (d2) represented by the general formula (3) copolymerized
together, the polymer having a weight average molecular weight of 1,000 to 500,000:
wherein R1 is —C(?O)—R3, —O—C(?O)—R3, or —C(?O)—O—R3, R2 is hydrogen or methyl, and R3 is each independently C1-C4 alkyl or C2-C4 alkenyl or alkynyl, R4 and R6 each are hydrogen or methyl, R5 and R9 each are an acid labile group, R7 is a single bond or a straight or branched C1-C6 alkylene group, R8 is hydrogen, fluorine, trifluoromethyl, cyano, or straight, branched or cyclic C1-C6 alkyl group, p is 1 or 2, q is an integer of 0 to 4, Y1 is a single bond, a divalent C1-C12 linking group having an ester radical, ether radical or lactone ring, phenylene group or naphthylene group, Y2 is a single bond, —C(?O)—O— or —C(?O)—NH—,
wherein R20, R24, and R28 each are hydrogen or methyl, R21 is a single bond, phenylene, —O—R—, or —C(?O)—Y0—R—, Y0 is oxygen or NH, R is a straight, branched or cyclic C1-C6 alkylene group, alkenylene or phenylene group, which may contain a carbonyl, ester, ether or hydroxyl radical, R22, R23, R25, R26, R27, R29, R30, and R31 are each independently a straight, branched or cyclic C1-C12 alkyl group which may contain a carbonyl, ester or ether radical, or a C6-C12 aryl, C7-C20 aralkyl, or thiophenyl group, Z0 is a single bond, methylene, ethylene, phenylene, fluorophenylene, —O—R32—, or —C(?O)—Z1—R32—, Z1 is oxygen or NH, R32 is a straight, branched or cyclic C1-C6 alkylene group, alkenylene or phenylene group, which may contain a carbonyl, ester, ether or hydroxyl radical, M? is a non-nucleophilic counter ion, a, b1, b2, c, d1, d2 and d3 being numbers in the range: 0 0

US Pat. No. 9,346,700

TITANIA-DOPED QUARTZ GLASS AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a titania-doped quartz glass, comprising the steps of:
mixing a silicon-providing reactant gas and a titanium-providing reactant gas,
heating the reactant gas mixture at 200 to 400° C.,
subjecting the mixture to oxidation or flame hydrolysis with the aid of a combustible gas and a combustion-supporting gas,
depositing a titania doped quartz glass, and
forming an EUV lithography member having a surface for reflecting EUV light, the surface being free of concave defects having
a volume of at least 30,000 nm3 and an aspect ratio of up to 10 in an effective region.

US Pat. No. 9,314,892

METHOD AND APPARATUS FOR MULTIPLE CUTOFF MACHINING OF RARE EARTH MAGNET BLOCK, CUTTING FLUID FEED NOZZLE, AND MAGNET BLOCK SECURING JIG

SHIN-ETSU CHEMICAL CO., L...

1. A cutting fluid feed nozzle for feeding a cutting fluid to a multiple blade assembly for multiple cutoff machining of a
rare earth magnet block, said multiple blade assembly comprising a plurality of cutoff abrasive blades coaxially mounted on
a rotating shaft at axially spaced apart positions, each blade of the plurality of cutoff abrasive blades comprising a core
in the form of a thin disk or thin doughnut disk and a peripheral cutting part on an outer peripheral rim of the core, wherein
said feed nozzle consists of
a hollow nozzle housing forming a fluid distributing reservoir, and
a cutting fluid inlet consisting of one conduit at the center of a back portion of the hollow nozzle housing, wherein
a plurality of slits corresponding to the plurality of cutoff abrasive blades are formed at a front portion of said hollow
nozzle housing,

wherein the front portion of said hollow nozzle housing has an upper wall tapered toward distal end of each slit of the plurality
of slits and a bottom wall so that the hollow nozzle housing is thinner at the distal end and the plurality of slits are formed
from the upper wall to the bottom wall only in a partial portion of the tapered portion of the front portion of said hollow
nozzle housing,

wherein an outer peripheral portion of each of the plurality of cutoff abrasive blades is inserted in the corresponding slit,
and

wherein the cutoff abrasive blades contact with the cutting fluid in the fluid distributing reservoir.

US Pat. No. 9,176,382

COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A composition for forming a titanium-containing underlayer film comprising:
as a component (A), a titanium-containing compound obtained by reacting a divalent or a trivalent alcohol represented by the
following general formula (A-2) with one or more kinds of compounds selected from the group consisting of a titanium compound
represented by the following general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation
of only the titanium compound represented by general formula (A-1),

Ti(OR1A)4  (A-1)

wherein, R1A represents a monovalent organic group having 1 to 20 carbon atoms containing 0 or 1 hydroxyl group;

R2A(OH)2  (A-2)

wherein, R2A represents a divalent organic group having 2 to 20 carbon atoms containing 0 or 1 hydroxyl group; and as a component (C),
a solvent.

US Pat. No. 9,099,717

METHOD FOR MANUFACTURING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY, NEGATIVE ELECTRODE MATERIAL FOR NON-AQUEO

SHIN-ETSU CHEMICAL CO., L...

1. A negative electrode active material for a non-aqueous electrolyte secondary battery comprising at least polycrystalline
silicon having a true density of more than 2.250 g/cm3 and less than 2.330 g/cm3, having a BET specific surface area of 0.1 to 5.0 m2/g and having a particle compressive strength of more than 400 MPa and less than 800 MPa,
wherein:
a silicon grain in the polycrystalline silicone has a grain size of from 20 nm to 100 nm, the grain size being obtained by
a Scherrer method based on a full width at half maximum of a diffraction line attributable to Si (111) and near 2?=28.4° in
a pattern analysis of x-ray diffraction, and

the negative electrode active material is manufactured by a method comprising:
depositing silicon on a substrate by vapor deposition by heating a metallic silicon by an electron beam, the substrate having
a temperature controlled to 300° C. to 800° C. under reduced pressure, and

pulverizing and classifying the deposited silicon.

US Pat. No. 9,064,929

METHOD FOR REDUCING THE THICKNESS OF AN SOI LAYER

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing an SOI wafer comprising at least:
a step of preparing a handle wafer and a donor wafer formed of a silicon substrate, the handle wafer being selected from the
group consisting of a quartz wafer, a glass wafer, an alumina (sapphire) wafer, a SiC wafer, and an aluminum nitride wafer;

an ion implantation step of implanting at least one of a hydrogen ion and a rare gas ion into the donor wafer to form an ion
implanted layer;

a bonding step of bonding an ion implanted surface of the donor wafer to a bonding surface of the handle wafer;
a delamination step of delaminating the donor wafer at the ion implanted layer to reduce a film thickness of the donor wafer,
thereby providing an SOI layer; and

an etching step of etching the SOI layer to reduce a thickness of the SOI layer, wherein:
the etching step includes:
a stage of performing rough etching as wet etching;
a stage of measuring a film thickness distribution of the SOI layer after the rough etching; and
a stage of performing precise etching as dry etching by a PACE method or a GOB method based on the measured film thickness
distribution of the SOT layer,

the method is performed without forming an etch stop layer, and
an etching removal on the precise etching stage is set smaller than an etching removal on the rough etching stage and is set
in a range of 10 nm to 100 nm.

US Pat. No. 9,499,468

3-ACYLOXYMETHYL-3-BUTENYL CARBOXYLATE COMPOUND AND METHOD FOR PRODUCING 4-ALKYL-3-METHYLENEBUTYL CARBOXYLATE

Shin-Etsu Chemical Co., L...

1. A method for producing a 4-alkyl-3-methylenebutyl carboxylate compound, the method comprising:
a diacyloxylation step of subjecting a 4-halo-2-halomethyl-1-butene compound of General Formula (6):

wherein X1 and X2 may be the same or different and each is a halogen atom,
to diacyloxylation to obtain a 3-acyloxymethyl-3-butenyl carboxylate compound of General Formula (3):

wherein R1 and R3 may be the same or different and each is a monovalent hydrocarbon group having 1 to 10 carbon atoms and optionally containing
one or more unsaturated bonds,
and
a coupling step of subjecting the 3-acyloxymethyl-3-butenyl carboxylate compound (3) to a coupling reaction with an organometallic
reagent of General Formula (4):


wherein R2 may be the same as or different from R1 or R3 and is a monovalent hydrocarbon group having 1 to 10 carbon atoms and optionally containing one or more unsaturated bonds
and M is Li, MgQ, ZnQ, Cu, CuQ, or CuLiQ wherein Q is a halogen atom or R2,
to obtain the 4-alkyl-3-methylenebutyl carboxylate compound of Formula (5):

US Pat. No. 9,440,375

BLANK FOR MOLD PRODUCTION AND METHOD FOR MANUFACTURING MOLD

SHIN-ETSU CHEMICAL CO., L...

1. A blank for mold production comprising:
a hard mask film comprising a material comprising chromium and tin, and
a substrate capable of being etched by fluorine-containing dry etching,
wherein the hard mask film is disposed on the substrate, and the hard mask film has a thickness of 1 to 10 nm,
wherein the material comprising chromium and tin has a content of tin of not under 0.01 times the content of chromium in atomic
ratio and not over 2 times the content of chromium in atomic ratio, and the concentration of tin in the material comprising
chromium and tin varies in a thickness direction of the material, and

wherein the substrate capable of being etched by fluorine-containing dry etching is a substrate comprising a silicon-containing
material.

US Pat. No. 9,372,404

ORGANIC FILM COMPOSITION, METHOD FOR FORMING ORGANIC FILM AND PATTERNING PROCESS USING THIS, AND HEAT-DECOMPOSABLE POLYMER

SHIN-ETSU CHEMICAL CO., L...

25. A patterning process on a substrate to be processed by a lithography, wherein, at least, a resist underlayer film is formed
on a substrate to be processed by using the organic film composition according to claim 1, on this resist underlayer film is formed any inorganic hard mask middle layer film selected from a silicon oxide film, a
silicon nitride film, and a silicon oxynitride film, on this inorganic hard mask middle layer film is formed an organic anti-reflective
film is formed, on this organic anti-reflective film is formed a resist upper layer film by using a resist upper layer film
composition which is a photoresist composition, thereby forming a multilayer resist film; and then, after a pattern circuit
area of the resist upper layer film is exposed, development thereof is carried out by using a developer to form a resist pattern
on the resist upper layer film, the organic anti-reflective film and the inorganic hard mask middle layer film are etched
by using the obtained resist pattern as an etching mask, the resist underlayer film is etched by using the obtained inorganic
hard mask middle layer film pattern as an etching mask, and the substrate to be processed is etched by using the obtained
resist underlayer film pattern as an etching mask, thereby forming a pattern on the substrate to be processed.

US Pat. No. 9,366,961

SILICONE STRUCTURE-BEARING POLYMER, RESIN COMPOSITION, AND PHOTO-CURABLE DRY FILM

SHIN-ETSU CHEMICAL CO., L...

1. A resin composition comprising
(A) a silicone structure-bearing polymer having a crosslinking group or a reaction site susceptible to crosslinking reaction
within the molecule, containing an isocyanurate structure bonded within the molecule or to a terminal group, and having a
weight average molecular weight of 3,000 to 500,000,

(B) at least one crosslinker selected from the group consisting of an amino condensate modified with formaldehyde or formaldehyde-alcohol,
a phenol compound having on the average at least two methylol or alkoxymethylol groups in the molecule, and a polyhydric phenol
compound having a hydroxyl group substituted by a glycidoxy group,

(C) a photoacid generator which is decomposed to generate an acid upon exposure to radiation of wavelength 190 to 500 nm,
and

(D) a solvent
wherein the silicone structure-bearing polymer comprises recurring units having the general formula (1):

 wherein R1 to R4 are each independently a monovalent C1-C8 hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each independently 0 or a positive number, e and f each
are a positive number, with the proviso that a, b, c and d are not equal to 0 at the same time and a+b+c+d+e+f=1,

X is a divalent organic group having the general formula (2):

 wherein Z is a divalent organic group selected from the group consisting of

 n is 0 or 1, R5 and R6 are each independently a C1-C4 alkyl or alkoxy group, k is 0, 1 and 2,

Y is a divalent organic group having the general formula (3):

 wherein V is a divalent organic group selected from the group consisting of

 p is 0 or 1, R7 and R8 are each independently a C1-C4 alkyl or alkoxy group, h is 0, 1 or 2, and

W is a divalent organic group having the general formula (4-1) and/or a monovalent organic group having the general formula
(4-2):


 wherein T1 and T2 are each independently a monovalent group selected from the group consisting of


 R9 is a C1-C4 alkyl or alkoxy group, and R10 is hydrogen, a C1-C4 alkyl or alkoxy group, or —(CH1)sOH wherein s is an integer of 0 to 3.

US Pat. No. 9,365,681

WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY BONDING ARRANGEMENT, AND THIN WAFER MANUFACTURING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A wafer processing laminate comprising a support, a temporary adhesive layer on the support, and a wafer laid contiguous
to the temporary adhesive layer, the wafer having a circuit-forming front surface and a back surface to be processed,
said temporary adhesive layer comprising a composite temporary adhesive unit having a trilayer structure consisting of a first
temporary bond layer (A) of thermoplastic organosiloxane polymer which is releasably bonded to the front surface of the wafer,
a second temporary bond layer (B) of thermosetting modified siloxane polymer which is laid contiguous to the first temporary
bond layer, and a third temporary bond layer (A?) of thermoplastic organosiloxane polymer which is laid contiguous to the
second temporary bond layer and releasably bonded to the support,

wherein the first and third temporary bond layers (A) and (A?) each comprise a thermoplastic organopolysiloxane polymer consisting
of difunctional siloxane units of R11R12SiO2/2, monofunctional siloxane units of R13R14R15SiO1/2, and as optional recurring units trifunctional siloxane units of R16SiO3/2, wherein R11, R12, R13, R14, R15, and R16 are each independently a substituted or unsubstituted monovalent hydrocarbon group,

wherein the first and third temporary bond layers (A) and (A?) each have a thickness in the range of 0.1 to 10 ?m.

US Pat. No. 9,188,866

COMPOSITION FOR FORMING TITANIUM-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A composition for forming a titanium-containing resist underlayer film comprising:
a component (A) that is one or more kinds of titanium compounds selected from the group consisting of compounds represented
by the following general formula (A-1) and (A-2), and a titanium-containing compound obtained by hydrolysis and/or condensation
of the titanium compounds represented by the general formulae (A-1) and (A-2);

a component (B); and
a solvent as component (D), wherein:
when component (A) is one or more kinds of compounds selected from the group consisting of titanium compounds represented
by general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds
represented by the general formula (A-1), the component (B) is one or more kinds of compounds selected from the group consisting
of titanium compounds represented by the following general formula (B-2)and a titanium-containing compound obtained by hydrolysis
and/or condensation of the titanium compounds represented by general formula (B-2), and

when component (A) is one or more kinds of compounds selected from the group consisting of titanium compounds represented
by the following general formula (A-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the
titanium compounds represented by general formula (A-2), the component (B) is one or more kinds of compounds selected from
the group consisting of titanium compounds represented by general formulae (B-1) and (B-2), and a titanium-containing compound
obtained by hydrolysis and/or condensation of the titanium compounds represented by general formulae (B-1) and (B-2),

Ti(OR1A)4  (A-1)

Ti(OR1A)4?na(OR2AO)na  (A-2)

wherein, R1A represents a monovalent organic group having 1 to 20 carbon atoms containing 0 or 1 hydroxyl group; R2A represents a divalent organic group having 2 to 20 carbon atoms containing 0 or 1 hydroxyl group; and “na” satisfies 0
Ti(OR1B)4  (B-1)

Ti(OR1B)4?nb(OR2BO)nb  (B-2)

wherein, R1B represents a monovalent organic group having 1 to 20 carbon atoms containing 0 or 1 hydroxyl group; R2B represents a divalent organic group having 2 to 20 carbon atoms containing 0 or 1 hydroxyl group; R1A and R1B are different and/or R2A and R2B are different; and “nb” satisfies 0

US Pat. No. 9,146,464

SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

4. A polymer comprising recurring units having the general formula (2b):

wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, R1a to R1m are each independently hydrogen, fluorine, or a C1-C20 straight or branched, monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, L1 is a single bond or a C1-C20 straight, branched or cyclic, divalent hydrocarbon group which may be substituted with or separated by a heteroatom, A is
trifluoromethyl, and n is 0 or 1, with the proviso that n is 0 when L1 is a single bond.

US Pat. No. 9,069,247

SILICON-CONTAINING SURFACE MODIFIER, RESIST LOWER LAYER FILM-FORMING COMPOSITION CONTAINING THE SAME, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A silicon-containing resist lower layer film-forming composition comprising:
a polysiloxane compound containing a component derived from a tetrafunctional hydrolyzable monomer in an amount of 70 mole
% or more of the polysiloxane compound; and

a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula
(A), or one or more partial structures each represented by the following general formula (C):


wherein:
R1 represents an organic group having a hydroxyl group or a carboxylic acid group; and

R2 and R3 each independently represents the same as R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms, wherein a blending amount of the silicon-containing
surface modifier in the silicon-containing resist lower layer film-forming composition is 0.01-50 parts by mass with respect
to 100 parts by mass of the polysiloxane compound.

US Pat. No. 9,458,365

TEMPORARY BONDING ADHESIVE COMPOSITIONS AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

Shin-Etsu Chemical Co., L...

14. An article of manufacture comprising:
a first composition comprising a thermosetting polyorganosiloxane, and
a second composition comprising a thermoplastic polyorganosiloxane,
wherein the thermoplastic polyorganosiloxane comprises:
one or more monofuntional siloxane unit(s) in a range of about 0.1 to about 4.0 mol %;
one or more bifunctional siloxane unit(s) in a range of about 88.8 to about 99.8 mol %; and
one or more tetrafunctional siloxane unit(s) in a range of about 0.1 to about 8.0 mol %.

US Pat. No. 9,287,561

NEGATIVE ELECTRODE MATERIAL FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERIES, MANUFACTURING METHOD THEREFOR, AND LITHIUM-ION SECONDARY BATTERIES

SHIN-ETSU CHEMICAL CO., L...

1. A negative electrode material for non-aqueous electrolyte secondary batteries, comprising:
silicon oxide particles comprising silicon oxide with silicon nanoparticles dispersed within the silicon oxide;
a metal oxide coating formed on a surface of the silicon oxide particles; and
a carbon coating formed on a surface of the metal oxide coating,
wherein the metal oxide coating comprises an oxide of one or two elements selected from the group consisting of magnesium
(Mg), and aluminum (Al), and

wherein the metal oxide coating formed on the surface of the silicon oxide particles is present in a proportion of 0.1% by
mass or more and 30% by mass or less based on the total mass of the silicon oxide particles.

US Pat. No. 9,266,985

SILICONE COMPOUND AND A USE THEREOF

SHIN-ETSU CHEMICAL CO., L...

2. A polymer comprising repeating units derived from the compound according to claim 1 and repeating units derived from at least one other compound having a group which is polymerizable with said compound.

US Pat. No. 9,244,348

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A process for forming a resist pattern, comprising the steps of:
applying a chemically amplified negative resist composition onto a processable substrate to form a resist film having a thickness
of up to 100 nanometers thereon,

exposing patternwise the resist film to high-energy radiation, and
developing the exposed resist film with an alkaline developer to form a resist pattern having a narrow line width of 50 nanometers
or less and having a design size width variation within 5 nanometers,

wherein the chemically amplified negative resist composition consists of a resist polymer consisting of the following recurring
units:

an acid generator, a basic compound, an organic solvent, and optionally a surfactant, the resist polymer becoming insoluble
in alkaline developer as a result of the leaving group undergoing an elimination reaction under the catalysis of an acid generated
by the acid generator upon exposure to high energy radiation.

US Pat. No. 9,091,918

SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A sulfonium salt having the general formula (1a):

wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, R1a to R1m are each independently hydrogen or a C1-C20 straight, branched or cyclic, monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, L is
a single bond or a C1-C20 straight, branched or cyclic, divalent hydrocarbon group which may be substituted with or separated by a heteroatom, X is
a C1-C5 divalent alkylene group in which some or all hydrogen atoms may be substituted by fluorine atoms, and n is 0 or 1.

US Pat. No. 9,090,513

METHOD OF MANUFACTURING TRANSPARENT SESQUIOXIDE SINTERED BODY, AND TRANSPARENT SESQUIOXIDE SINTERED BODY MANUFACTURED BY THE METHOD

Shin-Etsu Chemical Co., L...

1. A method of manufacturing a transparent sesquioxide sintered body comprising:
press molding a raw material powder into a predetermined shape, the raw material powder which is press molded being a powder
mixture of (i) particles of an oxide of at least one rare earth element selected from the group consisting of Y, Sc and lanthanide
elements and having a particle size distribution of the rare earth element oxide particles, or a particle size distribution
of secondary particles in a case where the rare earth element oxide particles are aggregated to form the secondary particles,
in which the particle diameter D2.5 value at which the cumulative particle amount from the minimum particle size side is 2.5%, based on the total particle amount,
is in a range from 180 nm to 2000 nm inclusive, and (ii) Zr oxide particles;

and thereafter sintering the press molded body to manufacture a transparent M2O3 type sesquioxide sintered body where M is at least one rare earth element selected from the group consisting of Y, Sc and
lanthanide elements.

US Pat. No. 9,482,949

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A positive resist composition comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl
group substituted with an acid labile group and recurring units (a) having an isosorbide nitrate ester, represented by the
general formula (1), and having a weight average molecular weight of 1,000 to 500,000 as a base resin,
wherein R1 is hydrogen or methyl, and X is a single bond, a C1-C12 linking group having an ester radical, ether radical or lactone ring, phenylene group or naphthylene group.

US Pat. No. 9,472,438

WAFER PROCESSING LAMINATE, WAFER PROCESSING MEMBER, TEMPORARY ADHERING MATERIAL FOR PROCESSING WAFER, AND MANUFACTURING METHOD OF THIN WAFER

SHIN-ETSU CHEMICAL CO., L...

1. A wafer processing laminate comprising a support, a temporary adhesive material layer formed thereon and a wafer laminated
on the temporary adhesive material layer, where the wafer has a circuit-forming front surface and a back surface to be processed,
wherein the temporary adhesive material layer comprises a three-layered structure complex temporary adhesive material layer
comprising a first temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A) releasably adhered on
a surface of the wafer, a second temporary adhesive layer of a radiation curable polymer layer (B) laminated on the first
temporary adhesive layer, and a third temporary adhesive layer of a thermoplastic organopolysiloxane polymer layer (A?) laminated
on the second temporary adhesive layer and releasably adhered to the support.

US Pat. No. 9,434,817

ROOM-TEMPERATURE-CURABLE RESIN COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A room-temperature-curable resin composition comprising a phosphazene skeleton-containing organosilicon compound shown
by the following general formula (1),

wherein, “R” represents a substituted or unsubstituted monovalent hydrocarbon group having 1 to 12 carbon atoms, “R1” and “R2” may be the same or different and represent a substituted or unsubstituted monovalent hydrocarbon group having 1 to 12 carbon
atoms, “A” represents a single bond or a divalent hydrocarbon group having 1 to 6 carbon atoms, “Y” represents a hydrolysable
group, and “n” is an integer satisfying 0?n?3.

US Pat. No. 9,403,967

CURABLE RESIN COMPOSITION, CURED PRODUCT THEREOF AND PHOTOSEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. A curable resin composition adaptable for forming an encapsulant comprising:
100 parts by mass of a main component (X) having a refractive index: RIX and comprising a silicone resin which comprises:

(A) an organopolysiloxane having two or more aliphatic unsaturated bonds in one molecule and being linear,
(B) an organopolysiloxane having two or more aliphatic unsaturated bonds in one molecule and having a resinous structure,
(C) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to a silicon atom in one molecule, and
(D) a platinum group metal catalyst, and
exceeding 0 part by mass and 100 parts by mass or less of an additive (Y) having a refractive index: RIY and containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and
having a different refractive index from that of the main component (X) being added and dispersed therein, in fine particulate
state liquid drops

wherein the difference of the refractive indexes of the main component (X) and the additive (Y) being |RIX?RIY|?0.0050 in an uncured state.

US Pat. No. 9,312,144

COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDER LAYER FILM AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A composition for forming a silicon-containing resist under layer film which comprises a polymeric silicon-containing compound
(A1) which is obtained by hydrolysis, condensation or hydrolysis-condensation of a silicon-containing composition (A-1) containing
one or more compounds selected from the group consisting of (i) compounds having the following general formula (1) and (ii)
compounds having the following formulae selected from (1?-a) to (1?-d),

wherein R represents an organic group having 1 to 6 carbon atoms, Ra, Rb and Rc each represents a substituted or unsubstituted monovalent organic group having 1 to 30 carbon atoms, w=1, x=0, 1, 2 or 3,
y=0, 1 or 2, z=0, 1, 2 or 3; and 7?x+y+z?1, and the case where (x, y, z)=(1, 1, 1) is not included,


wherein R has the same meaning as defined above, and R1 is a tertiary alkyl group.

US Pat. No. 9,240,332

FIBER-CONTAINING RESIN SUBSTRATE, SEALED SUBSTRATE HAVING SEMICONDUCTOR DEVICE MOUNTED THEREON, SEALED WAFER HAVING SEMICONDUCTOR DEVICE FORMED THEREON, A SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARAT

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a semiconductor apparatus, comprising:
a covering step of covering, with an uncured resin layer of a first fiber-containing resin substrate, at least one semiconductor
device mounting surface of a second substrate having the at least one semiconductor device mounted thereon or at least one
semiconductor device forming surface of a wafer having the at least one semiconductor device formed thereon;

a sealing step of collectively sealing the at least one semiconductor device mounting surface of the second substrate having
the at least one semiconductor device mounted thereon or the at least one semiconductor device forming surface of the wafer
having at least one semiconductor device formed thereon by heating and curing the uncured resin layer to provide a sealed
substrate having the at least one semiconductor device mounted thereon or a sealed wafer having the at least one semiconductor
device formed thereon; and

a piece forming step of dicing the sealed substrate having the at least one semiconductor device mounted thereon or the sealed
wafer having the at least one semiconductor device formed thereon into each piece to manufacture the semiconductor apparatus,

wherein the first fiber-containing resin substrate comprises a two-layered structure consisting of a resin-impregnated fiber
base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting
resin, and the uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated
fiber base material, and

wherein a thickness of the uncured resin layer is not smaller than 20 microns and not greater than 200 microns.

US Pat. No. 9,233,919

SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A sulfonium salt having the general formula (1):

wherein R1 is hydrogen, fluorine, methyl or trifluoromethyl, R2, R3, and R4 are each independently a substituted or unsubstituted, straight or branched C1-C10 alkyl, alkenyl or oxoalkyl group, a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, or 4-fluorophenyl group, any two of R2, R3, and R4 may bond together to form a ring with the sulfur atom, with the proviso that at least one of R2, R3, and R4 is a 4-fluorophenyl group.

US Pat. No. 9,081,290

PATTERNING PROCESS AND RESIST COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A pattern forming process comprising the steps of:
applying a resist composition comprising a polymer and an optional acid generator onto a substrate,
prebaking the composition to form a resist film,
exposing the resist film to high-energy radiation,
baking, and
developing the exposed film in an organic solvent-based developer to form a negative pattern wherein the unexposed region
of film is dissolved away and the exposed region of film is not dissolved,

said polymer comprising recurring units having a carboxyl group whose hydrogen is substituted by an acid labile group having
the general formula (1):


wherein R1 is a straight, branched or cyclic C1-C7 alkyl group, R2, R3 and R4 each are hydrogen, methyl or ethyl, excluding the event that at least two of R2, R3 and R4 are hydrogen, R5 is hydrogen or methyl, and R6 is methylene or ethylene.

US Pat. No. 9,044,810

RARE EARTH MAGNET AND ITS PREPARATION

SHIN-ETSU CHEMICAL CO., L...

1. A method for preparing a rare earth magnet comprising:
providing a R1-T-B sintered body comprising a R12T14B compound as a major phase wherein R1 is one or more element selected from rare earth elements including Sc and Y and T is Fe and/or Co,

providing an alloy powder consisting of R2 and M wherein R2 is one or more element selected from rare earth elements including Sc and Y and M is one or more element selected from the
group consisting of B, C, P, Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Zr, Nb, Mo, Ag, In, Sn, Sb, Hf, Ta, W, Pt,
Au, Pb, and Bi,

wherein the alloy powder is a quenched alloy powder obtained by quenching a melt consisting of the R2 and the M, and the quenched alloy powder consisting of an amorphous structure,

applying the alloy powder onto the surface of the sintered body, and then
heating the sintered body and the alloy powder in vacuum or an inert gas atmosphere at a temperature equal to or lower than
the sintering temperature of the sintered body for thereby causing R2 element to diffuse into the sintered body.

US Pat. No. 9,517,547

SUPER HARD ALLOY BASEPLATE OUTER CIRCUMFERENCE CUTTING BLADE AND MANUFACTURING METHOD THEREOF

SHIN-ETSU CHEMICAL CO., L...

1. An outer blade cutting wheel comprising a base in the form of an annular thin disc of cemented carbide having a Young's
modulus of 450 to 700 GPa, having an outer diameter of 80 to 200 mm defining an outer periphery, an inner diameter of 30 to
80 mm, and a thickness of 0.1 to 1.0 mm, and a blade section on the outer periphery of the base,
said blade section comprising
diamond and/or CBN abrasive grains pre-coated with a magnetic material,
a first metal or alloy formed by electroplating or electroless plating, the first metal or alloy covering and bonding the
pre-coated abrasive grains together and to the base, the pre-coated abrasive grains and the first metal or alloy constituting
a porous bonded structure, and

a second metal or alloy having a melting point of up to 350° C. infiltrated and filling pores of the porous bonded structure
and between abrasive grains and the base.

US Pat. No. 9,463,997

COMPOSITE PARTICLE, METHOD OF PRODUCING SAME, RESIN COMPOSITION CONTAINING THE PARTICLE, REFLECTOR FORMED FROM THE COMPOSITION, AND LIGHT-EMITTING SEMICONDUCTOR DEVICE USING THE REFLECTOR

Shin-Etsu Chemical Co., L...

1. A composite oxide particle prepared from raw materials comprising:
(1) at least one type of silicon-containing compound selected from among:
(1-1) finely powdered silica having a BET specific surface area of 50 m2/g or greater, and

(1-2) alkoxysilanes represented by general formula (1):
R1aSi(OR2)4-a  (1)

wherein each R1 independently represents an unsubstituted or substituted monovalent hydrocarbon group of 1 to 15 carbon atoms, each R2 independently represents an alkyl group of 1 to 6 carbon atoms, and a represents an integer of 0 to 3, and

(2) at least one type of metal compound comprising a metal other than silicon, the metal compound being selected from among:
(2-1) liquid metal alkoxides other than alkoxysilanes, and
(2-2) metal oxide powders with an average particle size within a range from 1 to 50 nm other than silica,
one of components (1) and (2) being an oxide, and one other being an alkoxide, wherein
the composite particle is prepared by mixing or kneading the raw material to obtain a sol or gel-like substance, subsequently
sintering the sol or gel-like substance at a temperature of 300° C. or higher to form a glass-like substance, and then crushing
the glass-like substance.

US Pat. No. 9,434,819

HYDROPHILIZED SILICONE PARTICLES AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A uniform water dispersion of silicone particles made hydrophilic at their surfaces by plasma treatment; wherein the particles
are not re-dispersible in water after the water has been removed from said dispersion.

US Pat. No. 9,382,148

POROUS GLASS BASE MATERIAL THERMAL INSULATING MEMBER AND SINTERING METHOD

Shin-Etsu Chemical Co., L...

1. A thermal insulating member that prevents scattering of radiant heat when heating, by a heater, a porous glass base material,
which is formed by depositing glass fine particles on the outside of a starting member formed by connecting a dummy rod to
at least one end of a core rod, to achieve sintering, the thermal insulating member comprising:
a cylindrical insulating cylinder;
an insulating upper board connected to a top end of the insulating cylinder;
an insulating lower board connected to a bottom end of the insulating cylinder; and
a thermal deformation preventing member that is connected to the insulating upper board and the insulating lower board and
prevents thermal deformation of at least one of the insulating cylinder, the insulating upper board, and the insulating lower
board, wherein

the thermal deformation preventing member includes a plurality of pillar members that are arranged within the insulating cylinder
and connect the insulating upper board to the insulating lower board.

US Pat. No. 9,329,476

CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A chemically amplified negative resist composition which comprises an onium salt represented by the following general formula
(0-1), a resin which becomes alkali insoluble by an action of an acid and an acid generator,

wherein Rf represents a fluorine atom or a trifluoromethyl group; Y represents a cyclic hydrocarbon group having 3 to 30 carbon atoms,
the hydrogen atom in the cyclic hydrocarbon group may be substituted by a hetero atom itself or a monovalent hydrocarbon group
which may be substituted by a hetero atom(s), and the hetero atom(s) may be interposed into the cyclic structure of the cyclic
hydrocarbon group and the monovalent hydrocarbon group; and M+ represents a monovalent cation.

US Pat. No. 9,263,261

METHOD FOR SUPPLYING SOURCE GAS FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON

SHIN-ETSU CHEMICAL CO., L...

1. A method of supplying a source gas to a reaction furnace for producing polycrystalline silicon with a Siemens method, the
method comprising:
using a reaction furnace in which one or more source gas supply nozzles are disposed such that a flow pattern of the source
gas in the reaction furnace is an ascending current in a reaction furnace center portion and is a descending current in a
reaction furnace outer wall side portion; and

setting, in performing deposition reaction of the polycrystalline silicon under a reaction pressure of 0.25 MPa to 0.9 MPa,
when flow velocity of the source gas in gas supply ports of the source gas supply nozzles is represented as u (m/sec), a source
gas supply amount is represented as Q (kg/sec), and an inner volume of the reaction furnace is represented as V (m3), values of u and Q of each of the source gas supply nozzles such that a total ?(Q×u2/V) of values Q×u2/V is equal to or larger than 2500 (kg/m·sec3).

US Pat. No. 9,233,988

SILYL-PROTECTED NITROGEN-CONTAINING CYCLIC COMPOUNDS AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A silyl-protected nitrogen-containing cyclic compound having the formula (1):
wherein R1, R2 and R3 each are an unsubstituted monovalent hydrocarbon group of 1 to 20 carbon atoms, R4 and R5 each are a divalent hydrocarbon group such that the cyclic structure containing R4 and R5 is piperazine, and hexahydropyrimidine, R6, R7 and R8 each are hydrogen or an unsubstituted monovalent hydrocarbon group of 1 to 20 carbon atoms, A is —C(O)OR9 or —C?N, R9 is an unsubstituted monovalent hydrocarbon group of 1 to 20 carbon atoms, and a is 0 or 1.
US Pat. No. 9,233,991

SYMMETRIC HYPERBRANCHED SILICONE-MODIFIED POLYMERIZABLE COMPOUND AND MODULARIZED MANUFACTURING METHOD THEREOF

SHIN-ETSU CHEMICAL CO., L...

1. A symmetric hyperbranched silicone-modified polymerizable compound of formula (1),
(RARB)2CHORCCRD  (1)

wherein
RA represents a monovalent linear, branched or cyclic siloxane chain;

RB is a divalent hydrocarbonylene methylene ether group of the following formula

—CH2CRb1Rb2(CRb3Rb4)n1OCH2— that is arranged in formula (1) as follows (RACH2CRb1Rb2(CRb3Rb4)n1OCH2)2CHORCCRD, wherein

Rb1, Rb2, Rb3, and Rb4 each may be the same or different, and each represent a hydrogen atom or a linear, branched or cyclic hydrocarbon group having
1 to 10 carbon atoms, each of which may be bonded, “n1” represents an integer selected from 0 to 10, and when “n1” represents
1, Rb1 is a hydrocarbon group having 1 to 10 carbon atoms and Rb2 is a hydrogen atom;

RC represents a divalent linking group;

“c” represents 0 or 1; and
RD represents an unsaturated polymerizable functional group.

US Pat. No. 9,224,888

SOLAR CELL AND SOLAR-CELL MODULE

SHIN-ETSU CHEMICAL CO., L...

1. A solar cell comprising a crystalline silicon substrate having at least a p-n junction, a passivation film formed thereon,
and electrodes formed thereon by printing and heat treating a conductive paste, characterized in that
the electrodes include a first electrode consisting of an extraction electrode which may contact the silicon substrate for
extracting photogenerated carriers from the silicon substrate, and a second electrode consisting of extraction and collector
electrodes having a higher conductivity than the first electrode, which is formed on the first electrode and passive film,
wherein the first electrode is entirely overlaid with the extraction electrode portion and a part of the collector electrode
portion of the second electrode, the collector electrode portion of the second electrode may contact the first electrode partially
for collecting the carriers drawn in the first electrode, and the collector electrode portion of the second electrode and
the silicon substrate contact only partially or nowhere outside the point of contact between the first electrode and the collector
electrode portion of the second electrode.

US Pat. No. 9,221,849

SILANE COUPLING AGENT, MAKING METHOD, PRIMER COMPOSITION, AND COATING COMPOSITION

Shin-Etsu Chemical Co., L...

1. A silane coupling agent consisting of a mixture of organosilicon compounds having the general formula (1):
wherein R1 is independently C1-C10 alkyl or C6-C10 aryl, R2 is independently hydrogen, C1-C10 alkyl or C6-C10 aryl, X is independently C1-C10 alkyl or C6-C10 aryl, n is an integer of at least 1, p is an integer of 0 to 3, and q is an integer of 0 to 2.
US Pat. No. 9,225,010

SILICON-CONTAINING PARTICLES, NEGATIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING THE SAME, NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD OF MANUFACTURING SILICON-CONTAINING PARTICLES

SHIN-ETSU CHEMICAL CO., L...

1. A silicon-containing particle that is used as a negative electrode active material for a nonaqueous electrolyte secondary
battery, wherein the silicon-containing particle has diffraction lines with peaks at 2?=28.4°, and 2?=28.6° in X-ray diffractometry.

US Pat. No. 9,193,596

REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON

Shin-Etsu Chemical Co., L...

1. A process for producing polycrystalline silicon comprising:
feeding a silicon raw material gas into a reactor, and
performing a deposition reaction of polycrystalline silicon in a state where a temperature of an inner surface of an inner
wall of the reactor is controlled at a temperature of not less than 100° C. and not more than 370° C., wherein the inner surface
comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]?1.5 [Si], is not less than 40%,
wherein [Cr] is a mass content of chromium in mass %, [Ni] is a mass content of nickel in mass %, and [Si] is a mass content
of silicon in mass %.

US Pat. No. 9,163,037

HYDROSILYLATION METHOD, METHOD FOR PRODUCING ORGANOSILICON COMPOUND, AND ORGANOSILICON COMPOUND

SHIN-ETSU CHEMICAL CO., L...

1. A hydrosilylation method wherein
(i) an olefin compound having a carbon-carbon unsaturated bond selected from the group consisting of: an olefin compound selected
from the group consisting of allyl isocyanate, triallyl isocyanurate, 1,3-butadiene, isoprene, 1,4-pentadiene, 1,5-hexadiene,
1,6-heptadiene, 1,7-octadiene, 1,8-nonadiene, 1,9-decadiene, divinylcyclohexane, trivinylcyclohexane, diallylcyclohexane,
triallylcyclohexane, styrene, allyl benzene, and allyl phenol; a diene compound of formula (4):

CH2?C(R4)—(CH2)m—C(R4)?CH2  (4)
wherein R4 is independently hydrogen atom or a monovalent hydrocarbon group and m is an integer of 0 to 20; and a compound containing
an aliphatic ring structure and/or an aromatic ring structure having vinyl group or allyl group, and
(ii) a compound having a hydrogensilyl group selected from the group consisting of hydrogentrimethoxysilane, hydrogenmethyldimethoxysilane,
hydrogendimethylmethoxysilane, hydrogentriethoxysilane, hydrogenmethyldiethoxysilane, hydrogendimethylethoxysilane, hydrogentri(2-propenoxy)silane,
hydrogenmethyldi(2-propenoxy)silane, hydrogendimethyl(2-propenoxy)silane, organopolysiloxane and organosilsesquioxane having
a hydrosilyl group produced by hydrolytic condensation of one of said silane monomers, 1,3,5,7-tetramethyltetrasiloxane, 1,1,3,3-tetramethyldisiloxane,
pentamethyldisiloxane, and dimethyl silicone polymer containing 3 to 100 silicon atoms having a hydrosilyl group on its side
chain or at its terminal
are reacted in the presence of a nitrile compound selected from the group consisting of acetonitrile, acrylonitrile, propane
nitrile, butane nitrile, and benzonitrile and an aromatic hydroxyl compound selected from the group consisting of phenol,
hydroquinone, cresol, and bisphenol A1 at a molar ratio of nitrile compound to aromatic hydroxyl compound in the range 1:1 to 100:1 by using catalytic action of
platinum and/or its complex compound to form a hydrosilylated derivative of said olefin compound.
US Pat. No. 9,117,978

THERMOSETTING SILICONE RESIN SHEET AND METHOD FOR PRODUCING THE SAME, AND LIGHT-EMITTING APPARATUS USING THE THERMOSETTING SILICONE RESIN SHEET AND METHOD FOR PRODUCING THE SAME

SHIN-ETSU CHEMICAL CO., L...

6. A light-emitting apparatus obtained by the method according to claim 5.

US Pat. No. 9,944,760

SILICONE-MODIFIED EPOXY RESIN, COMPOSITION CONTAINING SAID EPOXY RESIN, AND CURED PRODUCT THEREOF

Shin-Etsu Chemical Co., L...

1. A silicone-modified epoxy resin having a branched structure represented by the following Formula (1):
wherein R1 independently represents a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms;
R2 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms;
R3 independently represents a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms or a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms;
R4 represents an oxygen atom or a divalent hydrocarbon group represented by the formula:

provided that at least one R4 represents the divalent hydrocarbon group represented by the formula (2);
wherein R6 represents a single bond or an alkylene group having 1 to 6 carbon atoms; and m represents an integer from 0 to 2;
R5 represents a group represented by the following Formula (3):

wherein R1, R2, R3, and R4 respectively have the same meanings as described above; r and s each represent an integer from 0 to 10; X represents a structure represented by the following Formula (5); and the repeating units represented by r and s in the formula respectively include a block unit structure and/or a random unit structure; or
R5 represents a group represented by the following Formula (4):

wherein R2, R4, and X respectively have the same meanings as described above;
X represents a group represented by the following Formula (5):

wherein R7 represents a single bond or an alkylene group having 1 to 6 carbon atoms and optionally containing an ester bond or an ether bond; and m represents an integer from 0 to 2; and
n represents an integer from 1 to 10; and p and q each represent an integer from 0 to 10, provided that the repeating units represented by p, n, and q in the formula respectively include a block unit structure and/or a random unit structure.
US Pat. No. 9,403,968

HEAVY RELEASE ADDITIVE FOR RELEASE SHEET, POLYORGANOSILOXANE COMPOSITION FOR RELEASE SHEET, AND RELEASE SHEET

SHIN-ETSU CHEMICAL CO., L...

1. A high-release additive for release sheets, comprising a condensation product which is obtained from dehydration condensation
reaction of
(A) a polydiorganosiloxane having an average degree of polymerization of 1,050 to 3,000 and containing at least one hydroxyl
group or hydrolyzable group per molecule with

(B) a polyorganosiloxane resin primarily comprising SiO4/2 units and R3SiO1/2 units, wherein R is each independently a monovalent hydrocarbon group of 1 to 12 carbon atoms free of aliphatic unsaturation
or an alkenyl group of 2 to 6 carbon atoms, a molar ratio of R3SiO1/2 units to SiO4/2 units is in the range of 0.6 to 1.2, and the total content of hydroxyl and hydrolyzable groups is from 4.0% by weight to less
than 10.0% by weight,

wherein the dehydration condensation product of components (A) and (B) has a residual hydroxyl group content of up to 0.3%
by weight.

US Pat. No. 9,365,698

CURABLE RESIN COMPOSITION, CURED PRODUCT THEREOF AND PHOTOSEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. A curable resin composition adaptable for forming an encapsulant comprising:
100 parts by mass of a main component (X) having a refractive index: RIX and comprising a silicone resin which comprises:

(A) an organopolysiloxane having two or more aliphatic unsaturated bonds in one molecule and being linear,
(B) an organopolysiloxane having two or more aliphatic unsaturated bonds in one molecule and having a resinous structure,
(C) an organohydrogenpolysiloxane having two or more hydrogen atoms bonded to a silicon atom in one molecule, and
(D) a platinum group metal catalyst, and
exceeding 0 part by mass and 100 parts by mass or less of an additive (Y) having a refractive index: RIY and containing at least one of a silicone resin, a modified silicone resin, an epoxy resin and a modified epoxy resin, and
having a different refractive index from that of the main component (X) being added and dispersed therein, in fine particulate
state liquid drops

wherein the difference of the refractive indexes of the main component (X) and the additive (Y) being |RIX?RIY|?0.0050 in an uncured state.

US Pat. No. 9,316,909

PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A pattern forming process comprising the steps of applying a resist composition comprising a (meth)acrylate copolymer comprising
both recurring units having an acid labile group-substituted carboxyl group and recurring units having a lactone ring, an
acid generator, and an organic solvent onto a substrate, in a first heat treating step heat treating the composition to form
a resist film, selectively exposing a region of the resist film to high-energy radiation to form an exposed region of the
film and an unexposed region of the film, in a second heat treating step heat treating the resist film, and developing the
exposed film with a developer consisting of 40 to less than 100% by weight of a first solvent selected from a first group
consisting of methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl
formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, 2-phenylethyl acetate, and a combination of two
or more of the solvents listed in the first group, and the balance of a second solvent selected from a second group consisting
of 2-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate,
butyl acetate, isobutyl acetate, amyl acetate, butenyl acetate, isoamyl acetate, propyl formate, butyl formate, isobutyl formate,
amyl formate, isoamyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl lactate, ethyl
lactate, propyl lactate, butyl lactate, isobutyl lactate, amyl lactate, isoamyl lactate, and a combination of two or more
of the solvents listed in the second group, to form a pattern of negative tone wherein the exposed region of the film is not
dissolved and the unexposed region of the film is dissolved.

US Pat. No. 9,303,180

LOW-TEMPERATURE CUREABLE COATING COMPOSITION AND ARTICLE HAVING CURED COATING THEREOF

SHIN-ETSU CHEMICAL CO., L...

1. A curable coating composition comprising (A) 100 parts by weight of a hydrolyzable silyl-containing (meth)acrylic copolymer
and (B) 0.01 to 10 parts by weight of an organometallic catalyst, wherein
said copolymer is obtained from copolymerization of (a1) an alkyl (meth)acrylate and (a2) a silane compound having a hydrolyzable
functional group and a radically polymerizable unsaturated group, in a molar ratio (a1:a2)) of 80:20 to 20:80, the silane
compound (a2) having the general formula (1):

wherein R1 and R2 are each independently an alkyl of 1 to 3 carbon atoms or aryl, R3 is (meth)acryloxy, vinyl or styryl, m is an integer of 8 to 14, and n is an integer of 0 to 2.

US Pat. No. 9,293,763

SILICON OXIDE, MAKING METHOD, NEGATIVE ELECTRODE, LITHIUM ION SECONDARY BATTERY, AND ELECTROCHEMICAL CAPACITOR

SHIN-ETSU CHEMICAL CO., L...

1. A particulate silicon oxide for use as negative electrode material in nonaqueous electrolyte secondary batteries, having
a Cu content of 100to 20,000 ppm, an Fe content of 20 to 1,000 ppm, an Al content of up to 1,000 ppm, an average particle
size of 0.1 to 30 ?m, and a BET specific surface area of 0.5 to 30 m2/g.

US Pat. No. 9,176,374

PELLICLE

SHIN-ETSU CHEMICAL CO., L...

1. A pellicle comprising:
a pellicle frame having an upper annular face and a lower annular face,
a membrane adhered in a slack-free manner to said upper annular face of the pellicle frame, and
an agglutinant layer attached to the lower annular face of the pellicle frame,
wherein said frame has a double structure consisting of an inner frame and an outer frame, that said membrane is adhered exclusively
to said inner frame and said agglutinant layer is attached exclusively to said inner frame, and that the outer frame is adapted
to closely connect with the inner frame detachably.

US Pat. No. 9,136,121

UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A photoresist underlayer film-forming composition for use in lithography, comprising a novolak resin comprising recurring
units having the general formula (1) and a crosslinker:
wherein R1 and R2 are independently hydrogen, an acid labile group, glycidyl group, or a straight, branched or cyclic C1-C10 alkyl, acyl or alkoxycarbonyl,
R3, R4 and R6 are independently hydrogen, or a straight, branched or cyclic C1-C10 alkyl, C2-C10 alkenyl, or C6-C10 aryl group, which may have a hydroxyl, carboxyl, alkoxy, acyloxy, ether or sulfide moiety, or a halogen atom, hydroxyl group
or C1-C4 alkoxy group,

R5 is hydrogen, or a straight, branched or cyclic C1-C6 alkyl, a straight, branched or cyclic C2-C10 alkenyl, or C6-C12 aryl group, which may have a hydroxyl, alkoxy, ether, thioether, carboxyl, alkoxycarbonyl, acyloxy, —COOR or —OR moiety, wherein
R is a lactone ring, acid labile group, or —R?—COOR?, wherein R? is a single bond or alkylene group, and R? is an acid labile
group,

m, n, p, q and r each are 1 or 2, s and t each are 0 or 1.

US Pat. No. 9,568,821

PATTERNING PROCESS

Samsung Electronics Co., ...

1. A patterning process comprising:
forming a resist top coat on a photoresist film on a substrate by using a resist top coat composition that contains a polymer
having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group shown in the following general formula
(1), wherein m is 1 or 2, and p is 0
exposing the formed resist top coat and the photoresist film to an electron beam or to extreme ultraviolet (EUV) light having
a wavelength 3 nm to 15 nm; and

developing the exposed photoresist film and the exposed resist top coat by using an organic-solvent-based developer to form
a negative pattern; and

wherein the step of developing the exposed photoresist film and the exposed resist top coat simultaneously removes the resist
top coat:


US Pat. No. 9,366,958

PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A photoacid generator having the general formula (1a):

wherein A1 is a straight, branched or cyclic C1-C30 divalent hydrocarbon group which may be substituted with or separated by a heteroatom, La and Lb are each independently a linking group selected from ether bond, ester bond, sulfonic acid ester bond, carbonate bond, and
carbamate bond, Ra and Rb are each independently hydrogen or trifluoromethyl, Za+ and Zb+ are each independently a sulfonium or iodonium cation.

US Pat. No. 9,355,918

METHOD FOR PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON

SHIN-ETSU CHEMICAL CO., L...

1. A method for producing a high-purity polycrystalline silicon from chlorosilane by CVD, comprising:
performing a quality determination on a trichlorosilane raw material by analyzing a content of carbon-containing impurities
in the trichlorosilane by gas chromatography/mass spectrometry-selected ion monitoring (GC/MS-SIM), the carbon-containing
impurities comprising methyldichlorosilane and isopentane, and

setting trichlorosilane satisfying conditions, which are quality determination criteria, based on permissible values of the
content of carbon-containing impurities, wherein the permissible values are provided on the basis of a permissible value of
the content of carbon in an objective polycrystalline silicon.

US Pat. No. 9,287,174

FIBER-CONTAINING RESIN SUBSTRATE, DEVICE-MOUNTING SUBSTRATE AND DEVICE-FORMING WAFER, SEMICONDUCTOR APPARATUS, AND METHOD FOR PRODUCING SEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. A fiber-containing resin substrate for collectively encapsulating a semiconductor-device-mounting surface of a substrate
on which semiconductor devices are mounted or a semiconductor-device-forming surface of a wafer on which semiconductor devices
are formed, the resin substrate comprising:
a resin-impregnated fibrous base material including:
a fibrous base material; and
a semi-cured or cured thermosetting resin impregnated in the fibrous base material,
the resin-impregnated fibrous base material having a linear expansion coefficient in an X-Y direction of less than 3 ppm;
and

an uncured resin layer formed of an uncured thermosetting resin on one side of the resin-impregnated fibrous base material.
US Pat. No. 9,243,126

ORGANOSILICONE EMULSION COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. An organosilicone emulsion composition comprising
(A) 100 parts by weight of an organopolysiloxane having a viscosity of at least 500 Pa·s at 25° C.,
(B) 1 to 50 parts by weight of a polyether-containing organosiloxysilicate in the form of a condensation product of trimethylsiloxysilicate
with a hydroxyl-containing polyalkylene glycol,

(C) 1 to 50 parts by weight of a nonionic surfactant, and
(D) 10 to 1,000 parts by weight of water.

US Pat. No. 9,243,005

ORGANOSILICON COMPOUNDS, MAKING METHODS, AND ADHESION IMPROVER

SHIN-ETSU CHEMICAL CO., L...

1. An organosilicon compound having the formula (3):
wherein A is independently a straight or branched C1-C8 alkylene group, B is independently a straight or branched C1-C8 alkylene group, E is independently hydrogen or a substituent group of the formula (4):
wherein D is independently a straight or branched C1-C8 alkylene group, R is independently a hydrolyzable group selected from the group consisting of halogen atoms and alkoxy groups,
R? is independently a C1-C4 alkyl group, and m is an integer of 1 to 3, at least one E being a substituent group of formula (4).

US Pat. No. 9,221,742

SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A sulfonium salt having the general formula (1):

wherein R0 is hydrogen, or a straight C1-C20 or branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom,

R01 and R02 are each independently hydrogen, or a straight C1-C20 or branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, or R01 and R02 may bond together to form a ring with the carbon atom to which they are attached, with the proviso that at least one of R0, R01 and R02 has a cyclic structure,

L is a single bond or forms an ester bond, sulfonate bond, carbonate bond or carbamate bond with the vicinal oxygen atom,
R2, R3 and R4 are each independently a straight C1-C20 or branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, at least two of R2, R3 and R4 may bond together to form a ring with the sulfur atom in the formula.

US Pat. No. 9,156,098

METHOD AND JIG ASSEMBLY FOR MANUFACTURING OUTER BLADE CUTTING WHEEL

SHIN-ETSU CHEMICAL CO., L...

1. A jig assembly, for use in the manufacture of an outer blade cutting wheel comprising a base in the form of an annular
thin disc of cemented carbide having an outer periphery and a blade section formed on the outer periphery of the base, said
jig assembly comprising:
at least a pair of jig members each comprising
a cover comprising an annular plate of insulating material having a larger outer diameter than the base, and
at least one permanent magnet piece secured to the cover, disposed along the outer periphery of the cover to be on either
side of the base and having a remanence of at least 0.3 T,

wherein when the base is held between the jig members, a space is formed extending at least 10 mm from the base outer periphery,
and

the magnet pieces in the jig members produce a magnetic field of at least 8 kA/m at the base outer periphery and within the
space, said magnetic field acting to attract and secure diamond and/or CBN abrasive grains coated with a magnetic material
in proximity to the outer periphery of the base to keep them ready for electroplating or electroless plating.

US Pat. No. 9,140,988

POSITIVE RESIST COMPOSITION, MONOMER, POLYMER, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

11. A polymer comprising recurring units of the general formula (1) and having a weight average molecular weight of 1,000
to 500,000,
wherein R1 is a straight or branched C1-C4 alkylene group, R2 is a group selected from the group consisting of the following formulae (A-1) and (A-2), R3 is hydrogen, methyl or trifluoromethyl, and a is a number in the range: 0 wherein in formula (A-1), A1 is an integer of 0 to 6, RL30 is a tertiary alkyl group of 4 to 20 carbon atoms, a trialkylsilyl group in which each alkyl moiety has 1 to 6 carbon atoms,
an oxoalkyl group of 4 to 20 carbon atoms, or a group of formula (A-3):
in formula (A-2), RL31 and RL32 are hydrogen or straight, branched or cyclic alkyl groups of 1 to 18 carbon atoms, RL33 is a monovalent hydrocarbon group of 1 to 18 carbon atoms which may contain a heteroatom, a pair of RL31 and RL32, RL31 and RL33, or RL32 and RL33 may bond together to form a ring with the carbon and oxygen atoms to which they are attached, and
in formula (A-3), RL34, RL35 and RL36 each are a monovalent hydrocarbon group which may contain a heteroatom, a pair of RL34 and RL35, RL34 and RL36 or RL35 and RL36 may bond together to form a C3-C20 aliphatic ring with the carbon atom to which they are attached.

US Pat. No. 9,129,976

METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. A method of manufacturing a semiconductor apparatus with a forming mold having an upper mold and a lower mold comprising:
a preparing step of preparing the forming mold having a first cavity for integrating a substrate on which a semiconductor
device is mounted, a second cavity that is connected with the first cavity via a runner, a substrate on which no semiconductor
device is mounted, and a sealing layer to be formed of a thermosetting resin between the substrates;

an arranging step of heating the first cavity to a temperature ranging from a room temperature to 200° C., disposing the substrate
on which the semiconductor device is mounted on one of the upper mold and the lower mold of the forming mold, and disposing
the substrate on which no semiconductor device is mounted on the other of the upper mold and the lower mold;

a charging step of charging the thermosetting resin in excess of an amount necessary for forming the sealing layer to fill
the inside of the first cavity with the thermosetting resin and discharging an excess of the thermosetting resin from the
first cavity into the second cavity;

an integrating step of integrating the substrate on which the semiconductor device is mounted, the substrate on which no semiconductor
device is mounted and the sealing layer by molding the thermosetting resin while pressurizing the upper mold and the lower
mold; and

a dicing step of extracting the integrated substrates from the molding mold and dicing the integrated substrates to obtain
an individual semiconductor apparatus.

US Pat. No. 9,126,920

METHOD FOR PRODUCING 2-ISOPROPYLIDENE-5-METHYL-4-HEXENYL BUTYRATE

Shin-Etsu Chemical Co., L...

1. A method for producing 2-isopropylidene-5-methyl-4-hexenyl butyrate, comprising the steps of:
isomerizing 2-isopropenyl-5-methyl-4-hexenoic acid ester represented by formula (1):
in the presence of metal alkoxide into 2-isopropylidene-5-methyl-4-hexenoic acid ester represented by formula (2):

reducing the 2-isopropylidene-5-methyl-4-hexenoic acid ester (2) into 2-isopropylidene-5-methyl-4-hexenol represented by formula
(3):

and
butyrylating the 2-isopropylidene-5-methyl-4-hexenol (3) into 2-isopropylidene-5-methyl-4-hexenyl butyrate represented by
formula (4):

wherein R represents a hydrocarbon group having from 1 to 10 carbon atoms.

US Pat. No. 9,104,110

POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A photo or heat-sensitive polymer comprising recurring units having the general formula (1A) or (1B) and recurring units
having the general formula (2):

wherein R1 is hydrogen, methyl or trifluoromethyl, R2, R3 and R4 are each independently a straight, branched or cyclic C1-C15 monovalent hydrocarbon group, L is a single bond or a straight, branched or cyclic C1-C20 divalent hydrocarbon group which may be substituted with or separated by a heteroatom, X is a C1-C5 divalent alkylene group in which some or all hydrogen atoms may be substituted by fluorine atoms, each of Z1 and Z2 forms a C5-C15 alicyclic group with the carbon atom to which it is attached, R5 is a halogen atom or C1-C10 alkyl group, L? is a single bond or C1-C10 divalent organic group which may be substituted with an oxygen atom, m is an integer of 0 to 3, n is an integer of 1 or 2,
N is an integer of 0 to 2, M+ is a sulfonium cation of the general formula (a) or iodonium cation of the general formula (b),


wherein R101a, R101b, and R101c are each independently a substituted or unsubstituted, straight or branched C1-C10 alkyl, alkenyl or oxoalkyl group, or a substituted or unsubstituted C6-C18 aryl, aralkyl or aryloxoalkyl group, or any two or more of R101a, R101b, and R101c may bond together to form a ring with the sulfur atom, R101d and R101e each are a C6-C20 aryl group which may contain a straight, branched or cyclic C1-C6 alkyl or alkoxy radical, or R101d and R101e may bond together to form a ring with the iodine atom.

US Pat. No. 9,090,755

ORGANOPOLYSILOXANE POLYMER, PASTY COMPOSITION, AND COSMETIC PREPARATION CONTAINING THE COMPOSITION

Shin-Etsu Chemical Co., L...

1. An organopolysiloxane polymer having a glycerol derivative which can swell up by containing at least its own weight of
a liquid oil selected from the group consisting of hydrocarbon oil, ester oil, natural animal and vegetable oils, semi-synthetic
oil, and silicone oil selected from the group consisting of dimethylpolysiloxane, methylphenylpolysiloxane, methylhydrogenpolysiloxane
and dimethylsiloxane-methylphenyl siloxane copolymer, cyclosiloxanes, branched siloxanes, higher alkoxy-modified silicones,
alkyl-modified silicones and amino-modified silicones, wherein fluorinated silicones are excluded,
obtained by the addition polymerization of an organohydrogenpolysiloxane expressed by the following general formula R1dHeSiO(4-d-e)/2, with a glycerol derivative having alkenyl groups expressed by at least one of the following general formulae,




wherein,
R1 may be identical or different and is a substituted or unsubstituted monovalent hydrocarbon group having 1-30 carbon atoms
which does not contain an alkenyl group,

R3 is an alkenyl group having 2-20 carbon atoms,

d and e are respectively defined by:
1.0?d?2.3, 0.001?e?1.0, 1.5?d+e?2.6, and
s, t, u and v are respectively integers in the range 1-20;
and wherein, the organopolysiloxane polymer has a three-dimensional cross-linked structure.
US Pat. No. 9,090,827

LONG-LASTING PHOSPHOR CERAMICS AND MANUFACTURING METHOD THEREOF

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a type of long-lasting phosphor ceramics, comprising the steps of:
mixing an alkaline earth aluminate phosphor, an alkaline earth compound, an aluminum compound, and a rare earth compound to
form a mixture; and

firing the mixture, andwherein the long-lasting phosphor ceramics are represented by the compositional formula (1):
M(1-r-t)Al2O4:Eur,REs,Mnt  (1)
wherein M is at least one element selected from the group consisting of Ba, Sr, Mg and Ca; RE is at least one rare earth element
other than Eu; r is a number from 0.005 to 0.05; s is a number from 0.005 to 0.05; and t is a number from 0 to 0.08.

US Pat. No. 9,080,075

COATING EMULSION COMPOSITION, AND WATER/OIL-REPELLENT PAPER AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A water- and oil-repellent paper sheet having improved fold resistance, said paper sheet comprising a paper substrate and
a water- and oil-repellent, releasable silicone resin layer on at least one surface of the paper substrate,
said paper sheet including a planar portion normally and a folded portion when folded,
the planar portion exhibiting an oil resistance which is at least 9 in Kit value and the folded portion exhibiting an oil
resistance which is at least 8 in Kit value, both as measured at 20° C. and a humidity 50% by J. TAPPI paper/pulp test No.
41-83, and

the planar portion exhibiting a water repellency which is at least R8 and the folded portion exhibiting a water repellency
which is at least R7, both as measured by J. TAPPI paper/pulp test No. 68:2000,

said silicone resin layer us formed by coating a water- and oil-repellent composition on the surface of the paper substrate,
said composition primarily comprising an aqueous silicone resin emulsion comprising:

(a) 100 parts by weight of an organopolysiloxane containing at least two-silicon-bonded hydroxyl groups in a molecule,
(b) 0.5 to 20 parts by weight of dicarboxylic acid base curing agent,
(c) 1 to 50 parts by weight of silica,
(d) 2 to 4 parts by weight of an organopolysiloxane containing long-chain alkyl and alkoxy groups, but free of hydroxyl; groups,
and having the average compositional formula (3):


wherein Q is each independently selected from hexyl, octyl, decyl, and dodecyl, Z is each independently selected from methoxy,
ethoxy and —C2H4—Si(OCH3)3, the subscript d is a positive number of 1 to 100, e is a positive number of 1 to 100, and f is a positive number of 0.1
to 30, and

(e) a surfactant in an effective amount to keep components (a)-(d) in emulsion form.

US Pat. No. 9,518,154

FLUORINE-CONTAINING SURFACE TREATMENT AGENT AND AN ARTICLE TREATED WITH THE SAME

SHIN-ETSU CHEMICAL CO., L...

1. A surface treatment agent comprising a fluorooxyalkylene group-containing polymer and/or a product obtained by partial
hydrolysis and condensation of the polymer, wherein the fluorooxyalkylene group-containing polymer has a fluorooxyalkylene
structure represented by —(OCF2)p(OCF2CF2)q—;
wherein p and q are, independently of each other, an integer of from 5 to 80 and a total of p and q is 10 to 100, and these
parenthesized units may be sequenced at random; and

at least one group represented by the following formula (1) at at least one terminal;

wherein R is an alkyl group having 1 to 4 carbon atoms or a phenyl group, X is a hydrolysable group, a is 2 or 3, and c is
an integer of from 1 to 10;

and shows a decrease of 75% or more in weight, relative to the total weight of the polymer, in a temperature range of from
150 to 350 degrees C. when heated at a rate of 2 degrees C. per minute and a pressure of 0.1 Pa or less.

US Pat. No. 9,488,906

PHOTOMASK BLANK AND METHOD FOR MANUFACTURING PHOTOMASK BLANK

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate
and a resist film on the silicon-containing inorganic film, comprising:
forming the silicon-containing inorganic film such that when a surface that will contact the resist film is subjected to X-ray
photoelectron spectroscopy, a detected intensity with respect to an Si—O bond energy is larger than a detected intensity with
respect to an Si—Si bond energy;

performing a silylation process after forming the silicon-containing inorganic film; and then
forming the resist film by application.
US Pat. No. 9,428,590

METHOD FOR DEHYDRATING HYDROUS LOW-SUBSTITUTED HYDROXYPROPYL CELLULOSE AND METHOD FOR PRODUCING LOW-SUBSTITUTED HYDROXYPROPYL CELLULOSE BY USING SAME

Shin-Etsu Chemical Co., L...

1. A method for dehydrating hydrous low-substituted hydroxypropyl cellulose with a compression type dehydrator by feeding
the hydrous low-substituted hydroxypropyl cellulose to a screw conveyer connected to an inlet of the compression type dehydrator,
comprising the steps of:
starting operation of the screw conveyor to fill the screw conveyer and the compression type dehydrator with the hydrous low-substituted
hydroxypropyl cellulose to obtain a filled compression type dehydrator,

starting operation of the filled compression type dehydrator, and
feeding the hydrous low-substituted hydroxypropyl cellulose to the screw conveyer, while discharging dehydrated low-substituted
hydroxypropyl cellulose from an outlet of the compression type dehydrator,

wherein a feed rate of feeding the hydrous low-substituted hydroxypropyl cellulose to the screw conveyer is equal to a discharge
rate of discharging the dehydrated low-substituted hydroxypropyl cellulose in terms of net weight of cellulose ether,

wherein filling the compression type dehydrator with the hydrous low-substituted hydroxypropyl cellulose results in a pressure
at an inlet of the compression type dehydrator of from 0.10 to 0.25 MPa, and

wherein the low-substituted hydroxypropyl cellulose is water insoluble but swells in water.

US Pat. No. 9,411,225

PHOTO ACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

8. A chemically amplified resist composition comprising (A) a base resin, (B) a photo acid generator, and (C) an organic solvent,
the photo acid generator being represented by the following general formula (1a),
wherein R01 and R02 each independently represent a linear monovalent hydrocarbon group having 1 to 20 carbon atoms or a branched or cyclic monovalent
hydrocarbon group having 3 to 20 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; R03 represents a linear divalent hydrocarbon group having 1 to 30 carbon atoms or a branched or cyclic divalent hydrocarbon group
having 3 to 30 carbon atoms which may be substituted with a heteroatom, or interposed by a heteroatom; and R01 and R02 may be mutually bonded to form a ring together with the sulfur atom in the formula.

US Pat. No. 9,334,424

TEMPORARY ADHESIVE FOR WAFER PROCESSING, MEMBER FOR WAFER PROCESSING USING THE SAME, WAFER PROCESSED BODY, AND METHOD FOR PRODUCING THIN WAFER

SHIN-ETSU CHEMICAL CO., L...

1. A temporary adhesive for wafer processing which temporarily bonds a wafer having a circuit face on the front surface and
a processing face on the back surface to a support, comprising a first temporary adhesive layer which is a layer (A) of a
thermoplastic resin modified organopolysiloxane obtained by partial dehydration condensation of an organopolysiloxane resin
containing a R21R22R23SiO1/2 unit, wherein R21, R22, and R23 represent each a substituted or an unsubstituted monovalent hydrocarbon group having 1 to 10 carbon atoms or a hydroxyl group,
and a SiO4/2 unit in a molar ratio of R21R22R23SiO1/2 unit/SiO4/2 unit of 0.6 to 1.7 and an organopolysiloxane represented by the following general formula (1), and a second temporary adhesive
layer which is a thermosetting modified siloxane polymer layer (B) which is laminated on the first temporary adhesive layer
and is releasably bonded to the support,

wherein R11 and R12 represent each a substituted or an unsubstituted monovalent hydrocarbon group having to 10 carbon atoms and “n” represents
5,000 to 10,000.

US Pat. No. 9,299,875

MANUFACTURE OF SOLAR CELL MODULE

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a solar cell module by resin encapsulating a solar cell matrix comprising a plurality of electrically
connected solar cell components arranged between a transparent panel and a second panel or backsheet, comprising the steps
of:
(1) providing a first laminate by laminating a green silicone rubber sheet of a millable silicone rubber composition to one
surface of the transparent panel, the silicone rubber sheet having a predetermined pattern of recesses and bosses on its surface,
wherein the recesses are interconnected,

(2) providing a second laminate by laminating a green silicone rubber sheet of a millable silicone rubber composition to one
surface of the second panel or backsheet, the silicone rubber sheet having a predetermined pattern of recesses and bosses
on its surface, wherein the recesses are interconnected, and

(3) mating the first and second laminates together such that the patterned surfaces of the silicone rubber sheets may be opposed
to each other, placing the solar cell matrix between the first and second laminates, pumping a space surrounding the laminates
to vacuum,

wherein air in the spaces between the solar cell matrix and the green silicone rubber sheet of the first laminate and between
the solar cell matrix and the green silicone rubber sheet of the second laminate is evacuated through channels defined by
the interconnected recesses of the green silicone rubber sheets of the first and second laminates upon the vacuum pumping,
compressing and heating the first and second laminates in vacuum to cure the silicone rubber sheets for establishing a seal
around the solar cell matrix;

wherein step (1) includes embossing at least one surface of the green silicone rubber sheet of silicone rubber composition
and laminating the embossed silicone rubber sheet to the surface of the transparent panel such that the embossed surface of
the silicone rubber sheet may be disposed remote from the transparent panel; and

wherein both surfaces of the green silicone rubber sheet are embossed to have a predetermined pattern of interconnected recesses
and bosses on its surfaces, respectively, and wherein air in the spaces between the solar cell matrix and the green silicone
rubber sheet of the first laminate and between the transparent panel and the green silicone rubber sheet of the first laminate
is evacuated through channels defined by the interconnected recesses of the green silicone rubber sheet of the first laminate
upon the vacuum pumping of step (3).

US Pat. No. 9,233,870

METHOD OF FABRICATING OPTICAL FIBER PREFORM

SHIN-ETSU CHEMICAL CO., L...

1. A method of fabricating an optical fiber preform, comprising:
using a burner having a concentric multiple-tube structure and having at least a glass raw material gas-ejecting port arranged
at the center of the burner, a flammable gas ejecting port arranged outside the glass raw material gas-ejecting port, and
a plurality of small diameter combustion assisting gas-ejecting ports arranged inside the flammable gas-ejecting port in at
least one line on concentric circles relative to the glass raw material gas-ejecting port, the plurality of small diameter
combustion assisting gas-ejecting ports arranged on the same line having the same focal length in a concentric fashion in
such a way that the respective axes of the plurality of small diameter combustion assisting gas-ejecting ports focus at one
point;

ejecting a glass raw material from the glass raw material gas-ejecting port;
ejecting a flammable gas from the flammable gas-ejecting port arranged outside the glass raw material gas-ejecting port; ejecting
a combustion assisting gas from the plurality of small diameter combustion assisting gas-ejecting ports;

hydrolyzing a glass raw material gas ejected from the glass raw material gas-ejecting port to generate glass particles;
depositing the glass particles on a rotating starting material in the radial direction;
increasing feed rates of the respective gases from the start of the deposition to the end of the deposition;
making L1 greater than L2 (L1>L2) during the early stage of the deposition where a focal length of the plurality of small diameter combustion assisting gas-ejecting
ports is defined by L1 and a distance from the tip of the plurality of small diameter combustion assisting gas-ejecting ports to a deposition plane
of the glass particles on the starting material is defined by L2; and

making L2 increased during the course of the deposition so that L2 is greater than L1 (L1

US Pat. No. 9,228,052

ALLYL GROUP-MODIFIED FLUOROOXYALKYLENE GROUP-CONTAINING POLYMER AND METHOD FOR PRODUCING THE SAME

SHIN-ETSU CHEMICAL CO., L...

1. An allyl group-modified fluorooxyalkylene group-containing polymer that is represented by the following general formula
(1) and has a number average molecular weight of 1,000 to 50,000 in terms of polystyrene,

wherein, Rf represents a monovalent or divalent fluorooxyalkylene group-containing polymer residue; “m” represents 1 or 2;
X represents F or CF3; “n” represents an integer of 1 to 10; and ? represents 1 or 2.

US Pat. No. 9,181,615

COATING FLUID FOR BORON DIFFUSION

SHIN-ETSU CHEMICAL CO., L...

1. A method of fabricating a semiconductor device comprising:
using a coating fluid for boron diffusion into a silicon substrate to form a p-type diffusion layer,
wherein, the coating fluid comprises a boron compound, an organic binder, a silicon compound, water and/or an organic solvent
and an alumina precursor which includes aluminum hydroxide, aluminum chloride or aluminum chloride hexahydrate that forms
an alumina film upon heat treatment for boron diffusion,

wherein the alumina film inhibits outward diffusion of boron and enhances retention thereof during the heat treatment.

US Pat. No. 9,104,105

PATTERNING PROCESS AND RESIST COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A negative pattern-forming resist composition comprising a polymer, an acid generator, and an organic solvent,
said polymer consisting of recurring units (a1) and/or (a2) having a hydroxyl group substituted with an acid labile group,
represented by the general formula (1) and recurring units (b) derived from a monomer having an adhesive group selected from
the class consisting of hydroxyl, cyano, carbonyl, ester, ether, sulfonic acid ester, lactone ring, carboxyl, carboxylic anhydride,
carbonate, and maleimide,

wherein R1 to R4 and R5 to R8 are each independently hydrogen, cyano group, straight, branched or cyclic C1-C6 alkyl group, alkoxycarbonyl group, or ether or lactone ring-bearing group, at least one of R1 to R4 and R5 to R8 has an acid labile group-substituted hydroxyl group, m is 0 or 1, the subscripts a1 and a2 are numbers in the range: 0?a1<1.0,
0?a2<1.0, and 0 said polymer being dissolvable in a developer selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone,
4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate,
butyl acetate, isobutyl acetate, amyl acetate, isoamyl acetate, butenyl acetate, phenyl acetate, propyl formate, butyl formate,
isobutyl formate, amyl formate, isoamyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl
lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, amyl lactate, isoamyl lactate, methyl 2-hydroxyisobutyrate,
ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl
formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.

US Pat. No. 9,105,821

CURABLE SILICONE RESIN COMPOSITION, CURED PRODUCT THEREOF AND PHOTOSEMICONDUCTOR APPARATUS

SHIN-ETSU CHEMICAL CO., L...

1. A curable silicone resin composition which is an addition-curable silicone composition and comprises
(A)
(A-1) a compound having at least two aliphatic unsaturated groups per one molecule and represented by the following formula
(1),

wherein R1 represents an aliphatic unsaturated group, R2s may be the same or different from each other and each represent a substituted or unsubstituted monovalent hydrocarbon group
having 1 to 8 carbon atoms other than an aliphatic unsaturated group, Rf1 represents a CF3—(CF2)m—(CH2)n— groupwhere “m” represents an integer of 0 or more, and “n” represents an integer of 1 or more,“a” represents an integer of 1 to 3, and “x”, “y” and “z” are each an integer of x?0, y?1 and z?0, respectively,
(B) an organic silicon compound having at least two hydrogen atoms bonded to silicon atom per one molecule and having no aliphatic
unsaturated group,

(C) a hydrosilylation catalyst containing a platinum group metal, and
(D) 0.1 to 500 parts by mass of silicone powder having an average particle diameter of 0.5 to 100 ?m based on 100 parts by
mass of the total Components (A) and (B).

US Pat. No. 9,091,933

NEGATIVE PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

9. A pattern forming process comprising the steps of:
applying a resist composition onto a substrate, the resist composition comprising
(A) a polymer consisting of recurring units (a1) having a carboxyl group protected with an acid labile group, recurring units
(a2) having the general formula (3) or (4):


wherein R5 is hydrogen or methyl, X1 is a single bond or a divalent, straight, branched or cyclic C1-C15 hydrocarbon group which may contain an oxygen atom, R6 and R7 are each independently hydrogen or a monovalent, straight, branched or cyclic C1-C15 hydrocarbon group which may contain a heteroatom and in which one or more hydrogen atoms may be substituted by fluorine atoms,
or R6 and R7 may bond together to form a ring with the nitrogen atom to which they are attached, or either one or both of R6 and R7 may bond with X1 to form a ring with the nitrogen atom to which they are attached,


wherein R8 is hydrogen or methyl, X2 is a single bond or a divalent, straight, branched or cyclic C1-C15 hydrocarbon group which may contain an oxygen atom, R9 is hydrogen or a monovalent, straight, branched or cyclic C1-C15 hydrocarbon group which may contain a heteroatom and in which one or more hydrogen atoms may be substituted by fluorine atoms,
or R9 may bond with X2 to form a ring with the nitrogen atom to which they are attached, and R10 is a monovalent C3-C15 hydrocarbon group which may contain a heteroatom, recurring units having a polar functional group selected from the group
consisting of hydroxyl, carboxyl, cyano, carbonyl, ether, ester, carbonic acid ester, and sulfonic acid ester, as an adhesive
group, and recurring units having the general formula (p1), (p2) or (p3):


wherein R20, R24 and R28 each are hydrogen or methyl, R21 is a single bond, phenylene, —O—R33—, or —C(?O)—Y—R33— wherein Y is oxygen or NH, and R33 is a straight, branched or cyclic C1-C6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl (—CO—), ester (—COO—), ether (—O—) or hydroxyl
radical, R22, R23, R25, R26, R27, R29, R30 and R31 are each independently a straight, branched or cyclic C1-C12 alkyl group which may contain a carbonyl, ester or ether radical, or a C6-C12 aryl, C7-C20 aralkyl, or thiophenyl group, Z0 is a single bond, methylene, ethylene, phenylene, fluorophenylene, —O—R32—, or —C(?O)—Z1—R32—wherein Z1 is oxygen or NH, and R32 is a straight, branched or cyclic C1-C6 alkylene group, alkenylene group or phenylene group, which may contain a carbonyl, ester, ether or hydroxyl radical, and M?is a non-nucleophilic counter ion,

and
(C) an organic solvent,
prebaking the composition to form a resist film,
exposing the resist film to high-energy radiation,
baking, and
selectively dissolving an unexposed region of the resist film in an organic solvent-based developer to form a negative pattern.

US Pat. No. 9,085,482

GLASS BASE MATERIAL ELONGATING APPARATUS

Shin-Etsu Chemical Co., L...

1. A glass base material elongating apparatus comprising:
a heating furnace;
an extendable top chamber formed of a multilayer cylinder disposed above the heating furnace;
a glass base material hanging mechanism that hangs a glass base material into the heating furnace and the extendable top chamber;
and

a top chamber lifting mechanism, wherein
a flange is formed on a top portion of an outermost tube of the multilayer cylinder, and
the top chamber lifting mechanism includes a cylinder support member that supports the flange from below and a cylinder lifting
member that lifts up the cylinder support member.

US Pat. No. 9,079,848

5-ACETOXY-(E3)-3-PENTENYL METHOXYMETHYL ETHER AND METHOD FOR PREPARING (E3)-3-ALKENYL ACETATE USING THE SAME

Shin-Etsu Chemical Co., L...

1. A method for preparing an (3E)-3-alkenyl acetate comprising at least the steps of:
reacting 4-formyl-(3E)-3-butenyl methoxymethyl ether with a reductant to obtain 5-hydroxy-(3E)-3-pentenyl methoxymethyl ether;
reacting the 5-hydroxy-(3E)-3-pentenyl methoxymethyl ether with an acetylating agent to obtain 5-acetoxy-(3E)-3-pentenyl methoxymethyl
ether;

subjecting the 5-acetoxy-(3E)-3-pentenyl methoxymethyl ether to a coupling reaction at a temperature of from 0 to 20° C. with
a Grignard reagent, wherein the Grignard reagent is (Z3,Z6)-3,6-nonadienylmagnesium halide or (Z3)-3-nonenylmagnesium halide,

so that the 5-acetoxy group is replaced by either (Z3,Z6)-3,6-nonadienyl or (Z3)-3-nonenyl to obtain (3E)-3-alkenyl methoxymethyl
ether;

treating the (3E)-3-alkenyl methoxymethyl ether with an acid to obtain (3E)-3-alkenyl alcohol; and
reacting the (3E)-3-alkenyl alcohol with an acetylating agent to obtain the (3E)-3-alkenyl acetate,
wherein the reductant is sodium borohydride and the (3E)-3-alkenyl acetate is (3E,Z8,Z11)-3,8,11-tetradecatrienyl acetate
or (3E,ZS)-3,8-tetradecadienyl —acetate.

US Pat. No. 9,070,846

PRIMER COMPOSITION AND OPTICAL SEMICONDUCTOR APPARATUS USING SAME

SHIN-ETSU CHEMICAL CO., L...

1. A primer composition which adheres a substrate mounting an optical semiconductor device and a cured material of an addition
reaction curing silicone composition that encapsulates the optical semiconductor device, comprising:
(A) an acrylic resin containing either one or both of an acrylate ester and a methacrylate ester that contains one or more
SiCH?CH2 groups in the molecule,

(B) a solvent, and
a metal corrosion inhibitor.

US Pat. No. 9,046,764

RESIST UNDERLAYER FILM COMPOSITION, METHOD FOR PRODUCING POLYMER FOR RESIST UNDERLAYER FILM, AND PATTERNING PROCESS USING THE RESIST UNDERLAYER FILM COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A resist underlayer film composition, consisting essentially of:
a crosslinking agent:
an acid generator; and
a polymer obtained by:
(A) condensation of one or more kinds of a compound shown by the following general formula (1-1) with one or more kinds of
a compound shown by the following general formula (2-3) and an equivalent body thereof to form a condensed body, and

(B) condensation of the condensed body obtained in (A) with one or more kinds of a compound shown by the following general
formula (2-1), a compound shown by the following general formula (2-2), and an equivalent body thereof,


wherein each of R1 to R4 independently represents any of a hydrogen atom, a halogen atom, a hydroxyl group, an isocyanato group, a glycidyloxy group,
a carboxyl group, an amino group, an alkoxyl group having 1 to 30 carbon atoms, an alkoxycarbonyl group having 1 to 30 carbon
atoms, and an alkanoyloxy group having 1 to 30 carbon atoms, or an optionally substituted, saturated or unsaturated, organic
group having 1 to 30 carbon atoms, wherein two substituents arbitrarily selected from each of R1 to R4 within a molecule may be bonded to form a cyclic substituent group: in the general formulae (2-1) and (2-2), Q represents
an optionally substituted organic group having 1 to 30 carbon atoms, wherein two groups represented by Q arbitrarily selected
within a molecule may be bonded to form a cyclic substituent group; n1 to n6 represent numbers of each substituent groups,
while each of them represents an integer of 0 to 2: in the general formula (2-2), these numbers satisfy the relationships
of 0?n3+n5?3, 0?n4+n6?4, and 0?n3+n4?4: and in the general formula (2-3), Y represents a hydrogen atom or an optionally substituted
monovalent organic group having 1 to 30 carbon atoms, wherein (2-3) is different from (2-1) and (2-2).

US Pat. No. 9,046,772

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A monomer having the general formula (2):
wherein R1 is hydrogen, methyl or trifluoromethyl, R10 is a straight, branched or cyclic monovalent hydrocarbon or fluorinated hydrocarbon group of 1 to 15 carbon atoms, R11 is hydrogen or a straight, branched or cyclic monovalent hydrocarbon group of 1 to 10 carbon atoms, Z1 forms a C5-C15 alicyclic group with the carbon atom to which it is attached, and A2 is methylene or ethylene.

US Pat. No. 9,045,587

NAPHTHALENE DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A resist bottom layer material comprising a naphthalene derivative having the general formula (1):
wherein cyclic structures Ar1 and Ar2 denote a benzene or naphthalene ring, and n is such a natural number as to provide a
weight average molecular weight of up to 100,000 as measured by GPC versus polystyrene standards,
or a polymer comprising recurring units of the naphthalene derivative.

US Pat. No. 9,484,159

SILICON OXIDE MATERIAL, MAKING METHOD, NEGATIVE ELECTRODE, LITHIUM ION SECONDARY BATTERY, AND ELECTROCHEMICAL CAPACITOR

SHIN-ETSU CHEMICAL CO., L...

1. A silicon oxide material for nonaqueous electrolyte secondary battery negative electrodes, having a cobalt content of 2
to 18 ppm (parts by weight per million parts by weight).

US Pat. No. 9,458,144

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A method for preparing a monomer having the general formula (1), comprising the steps of reacting a compound having the
general formula (9) with a base or a metal selected from Group 1A, 2A and 2B metals to form a metal enolate reagent, and reacting
the metal enolate reagent with an acyloxyketone compound having the general formula (8):

wherein R1 is hydrogen, methyl or trifluoromethyl,

R2 is hydrogen or a straight, branched or cyclic C1-C10 monovalent hydrocarbon group which may contain a heteroatom,

R3 and R4 are each independently hydrogen or a straight, branched or cyclic C1-C10 monovalent hydrocarbon group which may contain a heteroatom, R3 and R4 may bond together to form a ring with the carbon atom to which they are attached,

R5 and R6 are each independently hydrogen or a straight, branched or cyclic C1-C10 monovalent hydrocarbon group which may contain a heteroatom, R5 and R6 may bond together to form a ring with the carbon atom to which they are attached,

R7 and R8 are each independently hydrogen or a straight, branched or cyclic C1-C10 monovalent hydrocarbon group which may contain a heteroatom, R7 and R8 may bond together to form a ring with the carbon atom to which they are attached,

X1 is a C1-C10 alkylene group which may have an ether, ester, lactone ring or hydroxyl, or a C6-C10 arylene group,

m is 0 or 1, in case of m=0, R2 may bond with R5 or R6 to form a ring with the carbon atoms to which they are attached, in case of m=1, R2 may bond with R7 or R8 to form a ring with the carbon atoms to which they are attached,

k1 is 0 or 1,

Xc is hydrogen or halogen, and

Ra is a straight or branched C1-C10 monovalent hydrocarbon group.

US Pat. No. 9,437,429

POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD

Shin-Etsu Chemical Co., L...

1. A polycrystalline silicon manufacturing apparatus comprising a reactor whose inside is sealed by a bell jar and a disc-like
base plate, wherein
the base plate comprises: electrode pairs adapted for holding a plurality of silicon cores and applying current to the silicon
cores; and at least one gas supplying nozzle adapted for supplying a source gas to a space inside of the bell jar,

all of the electrode pairs are located inside of an imaginary concentric circle C having a radius c and outside of an imaginary
concentric circle B having a radius b that is smaller than the radius c, the imaginary concentric circles C and B being imaginary
concentric circles centered at a center of the base plate, the imaginary concentric circle C having an area S (=S0/2) that is half an area S0 of the disc-like base plate, the imaginary concentric circle B having the same center as that of the concentric circle C,

all of the gas supplying nozzle is located inside of an imaginary concentric circle A having a radius a that is smaller than
the radius b, the imaginary concentric circle A having the same center as that of the concentric circle C,

a difference between the radius b and the radius a is in a range of 20 cm to 50 cm, and
one of the gas supplying nozzles is located at the center of the base plate.

US Pat. No. 9,377,690

COMPOSITON FOR FORMING METAL OXIDE-CONTAINING FILM AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A composition for forming a metal oxide-containing film comprising:
(i) as a component (A), a metal oxide-containing compound A1 obtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds wherein the hydrolysable metal
compounds are represented by the following general formula (A-1),

L(OR0A)a0(OR1A)a1(O)a2  (A-1)
wherein, R0A and R1A represent an organic group having 1 to 30 carbon atoms; a0, a1 and a2 represent an integer of 0 or more, at least one of a0
and a1 is 1 or more, and a0+a1+2×a2 is the same number as the number determined by valency of L; L is any of aluminum, gallium,
yttrium, titanium, zirconium, hafnium, bismuth, tin, vanadium, and tantalum, and
(ii) as a component (B), an aromatic compound represented by the following general formula (B-1), wherein the aromatic compound
is capable of generating a hydroxyl group by exposure to heat and/or an acid,

wherein, d1 and d3 represent an integer of 1, 2 or 3; d2 represents an integer of 0, 1 or 2; E and G represent a single bond
or a divalent organic group composed of one or more of carbon, oxygen and hydrogen atom; each D1, D2 and D3 may be the same or different and represents an organic group shown by the following general formula (B-1a) or (B-1b),
wherein, each R1, R2 and R3 may be the same or different and represents an organic group shown by the following general formula (B-1c), (B-1d) or (B-1e);
each R4, R5 and R6 may be the same or different and represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and two alkyl groups
may be bonded to form a cyclic substituent.
wherein, Q1B to Q4B represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, and two substituents arbitrarily selected from Q1B to Q4B may be bonded to form a cyclic substituent; Q5B to Q7B represent an alkyl group having 1 to 20 carbon atoms, and two substituents arbitrarily selected from Q5B to Q7B may be bonded to form a cyclic substituent; and Q8B and Q9B represent an alkyl group having 1 to 20 carbon atoms, and Q8B and Q9B may be bonded each other to form a cyclic substituent.

US Pat. No. 9,348,227

CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A chemically amplified resist composition comprising (A) a sulfonium salt having the general formula (1) and (B) a polymer
comprising recurring units having the general formula (U-1), which is decomposed under the action of acid to increase its
solubility in alkaline developer,

wherein R11 and R22 are each independently a branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, R33 and R01 are each independently hydrogen, or a straight C1-C20 or branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, k is an integer of 0 to 4, or R11, R22, R33 and R01 may bond together to form a ring with the carbon atoms to which they are attached and the carbon atom or atoms therebetween,
m is 0 or 1, R101, R102 and R103 are each independently a straight C1-C20 or branched or cyclic C3-C20 monovalent hydrocarbon group which may be substituted with or separated by a heteroatom, or any two or more of R101, R102 and R103 may bond together to form a ring with the sulfur atom,


wherein q is 0 or 1, r is an integer of 0 to 2, R1 is hydrogen, fluorine, methyl or trifluoromethyl, R2 is each independently hydrogen or C1-C6 alkyl, B1 is a single bond or C1-C10 alkylene which may contain an ether bond, a is an integer satisfying a?5+2r?b, and b is an integer of 1 to 3.

US Pat. No. 9,303,048

ORGANOSILICON COMPOUND, ADHESIVE COMPOSITION AND ARTICLE

SHIN-ETSU CHEMICAL CO., L...

1. An organosilicon compound of formula (1):

wherein Rl to R4 are each independently selected from the group consisting of hydrogen, substituted or unsubstituted monovalent hydrocarbon
groups which may be separated by at least one bond selected from ether, thioether, carbonyl, and thiocarbonyl bonds, and organic
groups of formulae (7) to (10), wherein at least one of R1 to R4 is any one of organic groups of formulae (7) to (10):


wherein R6 is an alkyl group of 1 to 10 carbon atoms or aryl group of 6 to 10 carbon atoms, R7 is an alkyl group of 1 to 20 carbon atoms, alkenyl group of 2 to 10 carbon atoms, aryl group of 6 to 10 carbon atoms or acyl
group of 1 to 20 carbon atoms, n is an integer of 1 to 3, m is an integer of 1 to 8, s is an integer of 1 to 8, Me is methyl,
and the wavy line designates a bonding site to the benzene ring.

US Pat. No. 9,296,636

TITANIA DOPED QUARTZ GLASS AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A method for manufacturing a titania-doped quartz glass, comprising the steps of subjecting a feed of a silicon-providing
reactant gas and a titanium-providing reactant gas to oxidation or flame hydrolysis with the aid of a combustible gas and
a combustion-supporting gas by using a burner, to form synthetic silica-titania fine particles, depositing the silica-titania
fine particles on a rotating target, and concurrently melting and vitrifying the particles to form a titania-doped quartz
glass ingot, wherein
during the ingot formation, the molten face of the ingot is maintained in an oblong shape having a major axis aligned with
the growth axis direction of the ingot so that a molten face sector of the ingot has a length “a” in the growth axis direction
of the ingot and a radius “b” in a radial direction of the ingot perpendicular to the growth axis direction, which meet the
relationship: 0.3<1?(b/a)<0.67, and wherein

said burner comprises a central multi-fold tube section A including at least three tubes at the center and a multi-nozzle
section B enclosing section A, a multiplicity of combustion-supporting gas feed tubes in the multi-fold tube section B being
disposed in five or six rows concentric with the central multi-fold tube.

US Pat. No. 9,201,300

RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A resist composition comprising a polymer capable of increasing alkali solubility under the action of acid as base resin,
and a polymer having the general formula (1) as polymeric additive,
wherein R1 is a single bond or a straight or branched C1-C4 alkylene, R2 is fluorine, or a straight, branched or cyclic C1-C6 alkyl, phenyl or alkyl-substituted phenyl group which contains at least one fluorine atom, R3 and R4 are each independently selected from the group consisting of hydrogen, hydroxyl, straight, branched or cyclic C1-C10 alkyl, alkoxy, acyloxy, C2-C6 alkenyl, C6-C10 aryl, cyano, nitro, amino and halogen, X1 and X2 each are phenylene or naphthylene, m is 1 or 2, R5 and R6 are each independently selected from the group consisting of hydrogen, halogen, straight or branched C1-C4 alkyl, alkoxy, acyloxy, hydroxyl, carboxyl, and alkoxycarbonyl, M is methylene, oxygen atom or sulfur atom,
p, q-1, q-2 and q-3 are numbers in the range: 0

0?(q-1) <1.0, 0 ?(q-2) <1.0, 0 ?(q-3) <1.0, and
0<(q-1)+(q-2)+(q-3) <1.0.

US Pat. No. 9,136,122

UNDERLAYER FILM-FORMING COMPOSITION AND PATTERN FORMING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A photoresist underlayer film-forming composition for use in lithography, comprising a novolak resin comprising recurring
units having the general formula (1) and a crosslinker:
wherein R1 and R2 are independently hydrogen, an acid labile group, glycidyl group, or a straight, branched or cyclic C1-C10 alkyl, acyl or alkoxycarbonyl,
R3, R4 and R6 are independently hydrogen, or a straight, branched or cyclic C1-C10 alkyl, C2-C10 alkenyl, or C6-C10 aryl group, which may have a hydroxyl, alkoxy, acyloxy, ether or sulfide moiety, or a halogen atom, hydroxyl group or C1-C4 alkoxy group,

R5 is hydrogen, or a straight, branched or cyclic C1-C6 alkyl, a straight, branched or cyclic C2-C10 alkenyl, or C6-C12 aryl group, which may have a hydroxyl, alkoxy, ether, thioether, carboxyl, alkoxycarbonyl, acyloxy, —COOR or —OR moiety, wherein
R is a lactone ring, acid labile group, or -R?-COOR?, wherein R? is a single bond or alkylene group, and R? is an acid labile
group,

m, n, p, q and r each are 1 or 2.

US Pat. No. 9,091,919

SILICONE STRUCTURE-BEARING POLYMER, RESIN COMPOSITION, AND PHOTO-CURABLE DRY FILM

SHIN-ETSU CHEMICAL CO., L...

1. A silicone structure-bearing polymer comprising recurring units having the general formula (1) and having a weight average
molecular weight of 3,000 to 500,000:

wherein R1 to R4 are each independently a monovalent C1-C8 hydrocarbon group, m is an integer of 1 to 100, a, b, c and d are each independently 0 or a positive number, e and f each
are a positive number, with the proviso that a, b, c and d are not equal to 0 at the same time and a+b+c+d+e+f=1,

X is a divalent organic group having the general formula (2):

wherein Z is a divalent organic group selected from the group consisting of

n is 0 or 1, R5 and R6 are each independently a C1-C4 alkyl or alkoxy group, k is 0, 1 or 2,

Y is a divalent organic group having the general formula (3):

wherein V is a divalent organic group selected from the group consisting of

p is 0 or 1, R7 and R8 are each independently a C1-C4 alkyl or alkoxy group, h is 0, 1 or 2, and

W is a divalent organic group having the general formula (4-1) and/or a monovalent organic group having the general formula
(4-2):


wherein T1 and T2 are each independently a monovalent group selected from the group consisting of


R9 is a C1-C4 alkyl or alkoxy group, and R10 is hydrogen, a C1-C4 alkyl or alkoxy group, or —(CH2)sOH wherein s is an integer of 0 to 3.

US Pat. No. 9,086,628

RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A resist protective film-forming composition comprising a polymer comprising recurring units of the general formula (1)
and having a weight average molecular weight of 1,000 to 500,000,
wherein R1 is hydrogen or a straight, branched or cyclic C1-C20 monovalent hydrocarbon group in which a constituent moiety —CH2— may be replaced by —O— or —C(?O)—, R2 is hydrogen, fluorine, methyl or trifluoromethyl, Aa is a straight, branched or cyclic C1-C20 hydrocarbon or fluorinated hydrocarbon group having a valence of k1+1, Ab is a straight, branched or cyclic C1-C6 divalent hydrocarbon group, k1 is an integer of 1 to 3, and k2 is 1.

US Pat. No. 9,052,602

DEVELOPER FOR PHOTOSENSITIVE RESIST MATERIAL AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A developer for photosensitive resist materials comprising a cyclic ammonium hydroxide having the general formula (1):
wherein R1 and R2 each are a straight, branched or cyclic C1-C6 alkyl group or C2-C10 alkenyl or alkynyl group, and R3 is methylene, ethylene, —O—CH2—, —S—CH2— or —NH—CH2—.

US Pat. No. 9,559,221

SOLAR CELL PRODUCTION METHOD, AND SOLAR CELL PRODUCED BY SAME PRODUCTION METHOD

SHIN-ETSU CHEMICAL CO., L...

1. A method for producing a solar cell having an antireflective film constructed of a first silicon nitride layer and a second
silicon nitride layer having a composition different from the first silicon nitride layer on a surface of a semiconductor
substrate, the method comprising:
providing a remote plasma-enhanced CVD apparatus including
a deposition compartment, and
a first plasma compartment and a second plasma compartment each disposed above the deposition compartment in fluid communication
with the deposition compartment,

placing a substrate below a first plasma compartment in the deposition compartment,
depositing a first silicon nitride layer on the semiconductor substrate from a first plasma flow from a first plasma compartment
by generating a plasma flow of ammonia gas, introducing silane gas into the plasma flow and injecting the plasma flow toward
the deposition compartment,

conveying the substrate to below the second plasma compartment, and
depositing a second silicon nitride layer of a different composition than the first silicon nitride layer from a second plasma
flow from a second plasma compartment by generating a plasma flow of ammonia gas, introducing silane gas into the plasma flow
and injecting the plasma flow toward the deposition compartment, the second plasma compartment having a different flow rate
ratio of ammonia gas to silane gas than in the first plasma compartment,

wherein each of the first and second plasma compartments is a cylindrical plasma-generating compartment comprising an excitation
section for generating the plasma flow of ammonia gas fed from upstream and an activation reaction section disposed downstream
of the excitation section for introducing silane gas into the plasma flow, and has end opening which is in fluid communication
with the deposition compartment and injects the plasma flow toward the substrate placed below the end opening.

US Pat. No. 9,411,226

CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A chemically amplified resist composition comprising a base polymer, an acid generator, and a basic compound having the
general formula (1):

wherein R1 and R2 each are hydrogen, or a straight, branched or cyclic C1-C30 alkyl, C6-C30 aryl, C7-C30 aralkyl, C2-C30 alkenyl, C2-C10 alkynyl, or C4-C12 heterocyclic-bearing group, or a combination of such groups, which group may contain a hydroxyl, mercapto, carboxyl, ether,
thio ether, ester, sulfonic acid ester, sulfonyl, lactone ring, carbonyl, cyano, nitro, halogen, trifluoromethyl, amide, imide,
sulfonamide, carbonate, sulfide, or oxime moiety.

US Pat. No. 9,395,634

PELLICLE FRAME AND PELLICLE WITH THIS

SHIN-ETSU CHEMICAL CO., L...

1. A pellicle frame comprising: a pellicle frame body made of an aluminum alloy, and a pure aluminum layer coating on at least
an inner wall of the pellicle frame body.
US Pat. No. 9,280,077

CHARGE CONTROL AGENT COMPOSITION FOR EXTERNAL ADDITION AND ELECTROSTATIC IMAGE DEVELOPING TONER

MORIMURA CHEMICALS LIMITE...

1. A charge control agent composition comprising:
at least two types of carrier particles different in average particle size of primary particles;
a resin covering a surface of at least one type of the carrier particles; and
a charge control agent (CCA) deposited on said surface of said at least one type of the carrier particles,
wherein the charge control agent comprises an organic compound having an electron-accepting functional group or an electron-donating
functional group, a salt of the organic compound, and/or a complex of the organic compound.

US Pat. No. 9,260,339

METHOD OF FABRICATING AN OPTICAL FIBER PREFORM AND A BURNER THEREFOR

SHIN-ETSU CHEMICAL CO., L...

1. A method of fabricating an optical fiber preform comprising the steps of:
ejecting a glass raw material gas, a burnable gas, a combustion assisting gas and a sealing gas from a plurality of nozzles
of a burner, including a circular first nozzle, so as to hydrolyze the glass raw material gas in flame and to generate glass
particles, the burner having a plurality of tubes with different diameters from each other and being coaxially arranged, the
plurality of nozzles being defined by the plurality of tubes; and

moving the burner relative to a starting rod so as to deposit the glass particles thereon,
wherein in the ejecting step a mixed gas of the glass raw material gas mixed with the combustion assisting gas is ejected
from an annular nozzle among the plurality of nozzles, the burnable gas is ejected from said circular first nozzle located
inside the annular nozzle, and the burnable gas and the combustion assisting gas are ejected from outer nozzles located outside
the annular nozzle, respectively.

US Pat. No. 9,244,350

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

SHIN-ETSU CHEMICAL CO., L...

1. A positive resist composition comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl
group substituted with an acid labile group and recurring units (a2) having hydroxy-2,3-dihydro-1,4-anthracenedione group,
or recurring units (a1) having a hydroxyanthraquinone group and recurring units (a2) having a hydroxy-2,3-dihydro-1,4-anthracenedione
group, represented by the general formula (1), and having a weight average molecular weight of 1,000 to 500,000 as a base
resin,

wherein R1 and R3 each are hydrogen or a straight, branched or cyclic C1-C6 alkyl, alkoxy or acyloxy group, R2 and R4 each are hydrogen or methyl, m and n each are an integer of 1 to 3, 0?a1<1.0, 0
US Pat. No. 9,201,301

METHOD FOR PRODUCING RESIST COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A method for filtering a silicon-containing resist underlayer film-forming composition to be used for manufacturing a semiconductor
device, wherein the silicon-containing resist underlayer film-forming composition is filtered using a filter from which 5
mg or less of an eluate is eluted per unit surface area (m2) in an extraction using an organic solvent.

US Pat. No. 9,063,413

RESIST COMPOSITION, PATTERNING PROCESS, MONOMER, AND COPOLYMER

SHIN-ETSU CHEMICAL CO., L...

1. A resist composition comprising as a base resin a polymer comprising recurring units having a carboxyl and/or phenolic
hydroxyl group substituted with an acid labile group, recurring units having the general formula (1):

wherein R1 is methyl, ethyl, propyl, methoxy, ethoxy or propoxy, R2 is hydrogen or methyl, and m is an integer of 1 to 4, and recurring units selected from the following formulae (d2-1) and
(d2-2):


the polymer having a weight average molecular weight of 1,000 to 500,000.
US Pat. No. 9,650,473

POLYSILOXANE-BASED MACROMONOMER FOR OPHTHALMIC LENS AND OPHTHALMIC LENS USING THE SAME

MENICON CO., LTD., Nagoy...

1. A polysiloxane-based macromonomer for an ophthalmic lens, comprising:
at least one polymerizable group,
a polysiloxane chain having a siloxane unit as a repeating unit,
a polyoxyethylene chain in which a number of repetition of an oxyethylene group is two or more, and
a polyoxyalkylene chain having an oxyalkylene group other than the oxyethylene group as a repeating unit, wherein
the polysiloxane chain, the polyoxyethylene chain and the polyoxyalkylene chain constitute a main chain of a molecule of the
polysiloxane-based macromonomer,

the at least one polymerizable group is bonded to the polysiloxane chain constituting the main chain of the molecule of the
polysiloxane-based macromonomer, through at least one urethane bond, and

an HLB value calculated according to the following formula is within a range from 0.7 to 6.0:
[HLB value]=E/5

wherein E represents a weight fraction (wt %) of the oxyethylene group in a molecule of the polysiloxane-based macromonomer.

US Pat. No. 9,416,147

PREPARATION OF SILAZANE COMPOUND

SHIN-ETSU CHEMICAL CO., L...

1. A method for preparing a silazane compound, target product of formula (4) or of formula (5)
R1nSi(NR2R3)(4-n)  (4)
wherein each R1 is independently hydrogen or a substituted or unsubstituted monovalent hydrocarbon group of 1 to 20 carbon atoms, R2 and R3 are independently a substituted or unsubstituted monovalent hydrocarbon group of 1 to 20 carbon atoms, n is an integer of
0 to 3, and R1 groups bond together to form a C2-C20 ring with the silicon atom to which they are attached when n is 2 or 3,
wherein each R1 is independently hydrogen or a substituted or unsubstituted monovalent hydrogen group of 1 to 20 carbon atoms, R4 is a divalent organic group of 1 to 20 carbon atoms which may contain a heteroatom, and n is an integer of 0 to 3 , said method
comprising the step of reacting a halosilane compound having the general formula (1):
R1nSiX(4-n)  (1)
wherein X is a halogen atom and R1 and n are as defined above, with an amino-containing compound having the general formula (2):
R2R3NH  (2)
wherein R2 and R3 are as defined above or with an amino-containing compound having the general formula (3):
wherein R4 is as defined above in a solvent which is the same silazane compound as the target product.

US Pat. No. 9,321,950

THERMALLY CONDUCTIVE SILICONE GREASE COMPOSITION

Shin-Etsu Chemical Co., L...

1. A thermally conductive silicone grease composition comprising:
(A) 100 parts by weight of an organopolysiloxane having at least two alkenyl groups in one molecule and having a kinetic viscosity
of 5,000 to 100,000 mm2/s at 25° C.;

(B) more than 50 parts to 90 parts by weight of a hydrolyzable methylpolysiloxane having a trifunctional termination at one
end and represented by formula (2):


wherein R2 represents an alkyl group having 1 to 6 carbon atoms and b is an integer of 5 to 100;

(C) 500 to 1,500 parts by weight of a thermally conductive filler having a thermal conductivity of at least 10 W/m·° C.;
(D) an organohydrogenpolysiloxane having from 2 to 5 hydrogen atoms directly bound to silicon atoms (Si—H groups) in such
an amount that the number of Si—H groups/the number of the alkenyl groups of said component (A)=1.7 to 2.8;

(E) 0.05 to 0.5 parts by weight of a bonding aid having a triazine ring and at least one alkenyl group in one molecule; and
(F) a catalyst selected from the group consisting of platinum and a platinum compound in an amount of 0.1 to 500 ppm of a
platinum atom relative to said component (A).

US Pat. No. 9,207,535

METHOD FOR PRODUCING RESIST COMPOSITION

SHIN-ETSU CHEMICAL CO., L...

1. A method for producing a resist underlayer film-forming composition used in a process for producing a semiconductor apparatus,
comprising the steps of:
cleaning an apparatus for producing the resist underlayer film-forming composition with a cleaning liquid;
applying the cleaning liquid on an evaluation substrate by spin-coating after removing the cleaning liquid from the apparatus
for producing the resist underlayer film-forming composition;

repeating the step of cleaning and the step of applying until the change in the density of defects having a size of 100 nm
or more on the evaluation substrate between before and after the application of the cleaning liquid becomes 0.2/cm2 or less; and

feeding a raw material of the resist underlayer film-forming composition to the apparatus for producing the resist underlayer
film-forming composition just after the step of repeating to produce the resist underlayer film-forming composition.

US Pat. No. 9,169,275

ORGANOPOLYSILOXANE AND MAKING METHOD

SHIN-ETSU CHEMICAL CO., L...

1. An organopolysiloxane containing at least a sulfide-containing organic group, a long-chain alkyl group, and a hydrolyzable
group, represented by the average compositional formula (1):
(A)a(B)b(C)c(D)d(R1)eSiO(4?2a?b?c?d?e)/2  (1)
wherein A is a sulfide-containing divalent organic group, B is an alkyl group of 5 to 10 carbon atoms, C is a hydrolyzable
group and/or hydroxyl group, D is a mercapto-containing organic group, R1 is an alkyl group of 1 to 4 carbon atoms, or an aryl group of 6 to 10 carbon atoms, a, b, c, d and e are numbers in the range:
0<2a <1, 0

US Pat. No. 9,057,603

OPTICAL FIBER CURVATURE MEASURING METHOD

Shin-Etsu Chemical Co., L...

1. An optical fiber curvature measurement method, comprising:
inserting a first end of the optical fiber into a ferrule, exposing a segment under measurement that includes a tip of the
optical fiber from the ferrule, setting the segment under measurement to be an optical fiber under measurement, and holding
and fixing a second end of the optical fiber on the side of the ferrule opposite the optical fiber under measurement with
a rotating holder that rotates the optical fiber under measurement around an axial core of the optical fiber under measurement;

by irradiating a side surface of the optical fiber under measurement at one of a plurality of longitudinal measurement positions
included on the segment under measurement with a pair of parallel light beams substantially orthogonal to an axial direction
of the optical fiber under measurement and separated from each other by a distance ?z in the axial direction, measuring a
difference di between positions where the pair of light beams reflected by the optical fiber under measurement pass, on a coordinate axis
substantially parallel to the axial direction and distanced from the optical fiber under measurement;

rotating the optical fiber under measurement with the rotating holder until an angle ?i;

first repeating the measurement and the rotating, until i values of the difference d, are obtained;
first calculating, using Expression 1 shown below, a representative value of amplitude SA from the i values of the difference di acquired from the first repeating;

second calculating, using Expression 2 shown below, curvature k of the optical fiber under measurement from the amplitude
SA calculated in the first calculating;

moving the one of the plurality of longitudinal measurement positions of the optical fiber irradiated by the pair of light
beams along an axial direction of the optical fiber to another one of the plurality of measuring positions;

second repeating the moving, the first repeating, the first calculating, and the second calculating m times;
shortening the optical fiber under measurement by cutting off a portion including the first end of the optical fiber under
measurement which includes the tip of the optical fiber under measurement to form a shortened segment under measurement, after
performing the processes up to the second repeating;

after setting a plurality of measurement positions within the shortened segment under measurement from among the plurality
of measurement positions to be re-measurement positions, recalculating a plurality of values for each curvature ks at the plurality of re-measurement positions by performing the first repeating, the first calculating, and the second calculating
for each of the re-measurement positions; and

correcting each of the values for the curvature k calculated for the measurement positions in the segment under measurement,
using the values of the curvature ks calculated in the recalculating for the corresponding re-measurement position among the re-measurement positions in the shortened
segment under measurement, wherein

i is a natural number equal to 2 or more,
is di =SA×cos(?i??)+?z,   Expression 1

? represents a phase angle,
is k=SA/(2L?z), and   Expression 2

L represents distance between the optical fiber under measurement and the coordinates.