US Pat. No. 9,382,472

TRANSFORMATIVE WAVELENGTH CONVERSION MEDIUM

Rohm and Haas Electronic ...

5. A lighting device, comprising:
a light source, wherein the light source produces light having a source luminescence spectrum; and
an active layer, wherein the active layer comprises the transformative wavelength conversion medium of claim 1 in a cured state;
wherein the phosphor is radiationally coupled to the light source.

US Pat. No. 9,138,733

STABLE TIN FREE CATALYSTS FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. An aqueous catalyst solution consisting of one or more antioxidants, nanoparticles of palladium metal and one or more compounds
chosen from polymers having a formula:

wherein R1, R2, R3, R4, R5, R6 and R7 are the same or different and chosen from —H, —CH2COOX, —C(O)—CH3, —C(O)—(CH2)z—CH3 and


wherein n is an integer of at least 2, z is an integer of at least 1 and X is —H or a counter cation, and a reaction product
of a polymer having a formula:


wherein R9, R10, R11, R12, R13, R14, and R15 are the same or different and are chosen from —H, —CH3, —CH2CH3, —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3 and —(CH2CHR8O)y—H, with the proviso that at least one of R9, R10, R11, R12, R13, R14, and R15 is —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3 or —(CH2CHR8O)y—H, wherein R8 is —H or —CH3, x and y are integers of at least 1 and n and z are as described above, and a quaternary compound having a formula:


wherein m is an integer from 1 to 16, Y is halogen, Z? is a counter anion, R16, R17 and R18 are the same or different and are —H, —CH3 or —(CH2)p—CH3, and R19 is —H or —CH3 and p is an integer of 1 to 9, and one or more cross-linking agents, the catalyst is free of tin.

US Pat. No. 9,576,799

DOPING OF A SUBSTRATE VIA A DOPANT CONTAINING POLYMER FILM

DOW GLOBAL TECHNOLOGIES, ...

1. A method for doping a substrate, comprising:
disposing a coating of a composition comprising a block copolymer, a dopant precursor and a solvent on a substrate; where
the block copolymer is capable of phase segregating and embedding the dopant precursor while in solution or on a surface of
the substrate; and

annealing the substrate at a temperature of 550 to 1300° C. for 0.1 second to 24 hours to diffuse the dopant into the substrate.

US Pat. No. 9,418,848

METHODS OF FORMING PATTERNS WITH A MASK FORMED UTILIZING A BRUSH LAYER

Micron Technology, Inc., ...

1. A method of forming a pattern, comprising:
forming a first mask over a material, the first mask having features extending therein and defining a first pattern; the first
pattern having a first level of uniformity across a distribution of the features; the features within such distribution all
being of similar size;

forming a brush layer across the first mask and within the features to narrow the features and create a second mask from the
first mask; the second mask having a second level of uniformity across the narrowed features which is greater than the first
level of uniformity;

transferring a pattern from the second mask into the material; and
wherein the features of the first mask are distributed amongst two or more different shapes with one of the shapes being substantially
circular and another being substantially diamond, and wherein the brush layer alleviates differences between such shapes.

US Pat. No. 9,527,936

POLYMER COMPRISING REPEAT UNITS WITH PHOTOACID-GENERATING FUNCTIONALITY AND BASE-SOLUBILITY-ENHANCING FUNCTIONALITY, AND ASSOCIATED PHOTORESIST COMPOSITION AND ELECTRONIC DEVICE FORMING METHOD

ROHM AND HAAS ELECTRONIC ...

1. A polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating repeat
units, wherein each of the photoacid-generating repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing
functionality selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein
the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof:
wherein the photoacid-generating repeat units have the structure
wherein
R1 is independently in each of the repeat units H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

L1 is independently in each of the repeat units —O—, —C(O)—O—, unsubstituted C6-18 arylene, or substituted C6-18 arylene;

m is independently in each of the repeat units 0 or 1;
L2 is independently in each of the repeat units an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, include one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR2, —PR2—, —C(O)—, —OC(O)O—, —N(R2)C(O)—, —C(O)N(R2)—, —OC(O)N(R2)—, —N(R2)C(O)O—, —S(O)—, —S(O)2—, —N(R2)S(O)2—, —S(O)2N(R2)—, —OS(O)2—, or —S(O)2O—, wherein R2 is H or C1-12 hydrocarbyl;

Z? is independently in each of the repeat units sulfonate (—SO3?), sulfonamidate, which is an anion of sulfonamide, —S(O)2N—R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl, or sulfonimidate, which is an anion of sulfonamide, —S(O)2N? S(O)2R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl; and

Q+ is photoacid-generating cation;

wherein at least one of L1, L2 (when m is 1), and Q+ comprises the base-solubility-enhancing functionality.

US Pat. No. 9,403,145

ORGANOMETALLIC COMPOUND PREPARATION

Dow Global Technologies L...

1. An apparatus for continuously manufacturing an organometallic compound comprising: (a) a source of a first reactant stream
wherein the first reactant comprises a metal; (b) a source of a second reactant stream; (c) a laminar flow contacting zone
for cocurrently contacting the first reactant stream and the second reactant stream; (d) a mixing zone comprising a turbulence-promoting
device; and (e) a heat transfer zone.

US Pat. No. 9,334,357

AROMATIC RESINS FOR UNDERLAYERS

Rohm and Haas Electronic ...

9. A process of forming a patterned layer comprising disposing a layer of the composition of claim 8 on a substrate; removing organic solvent to form a polymeric reaction product layer; disposing a layer of a photoresist on
the polymeric reaction product layer; exposing the photoresist layer to actinic radiation through a mask; developing the exposed
photoresist layer to form a resist pattern; and transferring the pattern to the polymeric reaction product layer to expose
portions of the substrate.

US Pat. No. 9,330,809

ELECTRICALLY CONDUCTING COMPOSITES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

DOW GLOBAL TECHNOLOGIES L...

1. A composition comprising:
a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; and
a metallocene; where the metallocene is present in an amount of greater than 75 wt %, based on the total weight of the composition;
where the charge mobility is increased by a factor of 3 or more over compositions having 50 wt % of ferrocene or less with
the remainder being a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene].

US Pat. No. 9,441,055

ARYLCYCLOBUTENES

Dow Global Technologies L...

1. A compound of the formula (1)
wherein each A is independently chosen from —CR3R4—O—, —C(?O)O—, and —C(?O)NH—; each B is independently chosen from —CR3R4— and —C(?O)—; each R is independently chosen from halo, cyano, hydroxy, carboxy, C1-6 alkoxy, C1-6 alkyl, C1-6 haloalkyl, C2-6 alkenyl, carboxy C1-6 alkyl, —(C?O)—C1-6 alkyl, —G—(C?O)—C1-6 alkyl, —(C?O)—G—C1-6 alkyl, —O—C4-20 aryl, —(C?O)—C4-20 aryl, —G—(C?O)—C4-20 aryl, and —(C?O)—G—C4-20 aryl; each of R1, R2, R3 and R4 is independently chosen from H, C1-10 alkyl, C2-10 alkenyl, C2-10 alkynyl, and C4-15 aryl; Z is an organic radical having 2 to 50 carbon atoms; G is O or N(R?)2; each R? is independently chosen from H, C1-6 alkyl, C4-10 aryl, and C7-15 aralkyl; x is the number of R groups and is an integer of from 0 to 2; m is an integer of from 1 to 6; n is an integer of
from 0 to 5; and m+n=3 to 6.

US Pat. No. 9,382,444

NEUTRAL LAYER POLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

DOW GLOBAL TECHNOLOGIES L...

1. A composition comprising:
a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically
different from each other; where the first segment has a first surface free energy and where the second segment has a second
surface free energy;

an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free
energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive
copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy
reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is
not water miscible; where the additive copolymer is not covalently bonded with the block copolymer; and where the additive
copolymer is operative to form a neutral layer on a surface of the block copolymer and to facilitate formation of domains
in the block copolymer that are perpendicular to a surface of a substrate that the composition is disposed on; where the surface
free energy reducing moiety is covalently bonded to a segment that is chemically identical or chemically compatible with the
first segment of the block copolymer, or to a segment that is chemically identical or chemically compatible with the second
segment of the block copolymer; and

a solvent.

US Pat. No. 9,366,964

COMPOSITIONS AND ANTIREFLECTIVE COATINGS FOR PHOTOLITHOGRAPHY

Dow Global Technologies L...

1. A composition comprising at least the following A and B:
A) polymer that comprises the following structural unit 1:
wherein
L is CX—CYZ, where X, Y, and Z are each independently selected from hydrogen, an alkyl, or a substituted alkyl; and,
M is an alkylene, an arylene, a substituted alkylene, a substituted arylene, or C(O)O—W—, where W is an alkylene or a substituted
alkylene; and

R?, R?, and R?? are each independently selected from an aromatic hydrocarbon, an aliphatic hydrocarbon, or a substituted hydrocarbon
that comprises one or more of O, N, S, or Si atoms, provided that at least one of R?, R?, and R?? is selected from alkoxyl,
aryloxyl, hydroxyl, halide, carboxyl, or carbonate; and,

p is an integer from 1 to 10,000; and
with the proviso that the polymer does not comprise a polyhedral oligomeric silsesquioxane (POSS) structure; and
B) a polymer formed from a first composition comprising at least one of the following:
a) a Compound F1 selected from Formula 1:

wherein Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple
bonds are not in a conjugated configuration; and

R1, R2, and R3 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl or a
substituted alkyl;

b) a Compound F2 selected from Formula 2:
wherein Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene; and R4, R5, and R6 are each
independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl or a substituted alkyl;
c) a Compound F3 selected from Formula 3:

wherein Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8,
and R9 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl or a substituted
alkyl; and/or

d) A Compound F4 selected from Formula 4:
wherein R10, R11, R12, and R13 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein
R is alkyl or a substituted alkyl; and
wherein the first composition comprises Compounds F1, F2, F3 and F4, and wherein the molar ratio of F1/F4 is from 1/20 to
1/1.

US Pat. No. 9,348,220

PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

1. A photoacid generator compound that comprises a structure of the following formula (I):
RO(C?O)(CXY)p(CF2)nSO3?M+  (I)

wherein R is hydrogen or non-hydrogen substituent;
X and Y are each independently hydrogen or a non-hydrogen substituent;
p is a positive integer;
n is a positive integer;
M+ is a counter ion.

US Pat. No. 9,336,921

ELECTRICALLY CONDUCTING COMPOSITES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

DOW GLOBAL TECHNOLOGIES L...

1. A composition comprising:
a regioregular polyalkylthiophene and/or a regioregular poly[2,5-bis(3-alkylthiophen-2-yl)thieno(3,2-b)thiophene]; and
a metallocene; where the metallocene is present in an amount of greater than 60 wt %, based on the total weight of the composition.
US Pat. No. 9,099,208

ALPHA-PARTICLE EMITTER REMOVAL

Rohm and Haas Electronic ...

1. A method for purifying a tin solution comprising: providing an acidic tin solution having an alpha-emitting material comprising
one or more of 210Pb, 211Bi and 212Bi; contacting the tin solution with an ion exchange resin for a period of time sufficient to remove at least a portion of
the alpha-emitting material comprising one or more of 210Pb, 211Bi and 212Bi; and separating the tin solution from the ion exchange resin to provide a purified tin solution; wherein the ion exchange
resin is chosen from one or more of iminodiacetic acid resins, nitrilotriacetic acid resins, phosphinoacetic acid resins,
thiourea resins, picolylamine resins, quaternary amine resins, tertiary amine resins, aromatic amine resins, thiol resins,
and sulfonated phenol resins.

US Pat. No. 9,298,093

POLYMERS, PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

Rohm and Haas Electronic ...

1. A method of forming a photolithographic pattern, comprising:
(a) providing a substrate comprising one or more layer to be patterned over a surface of the substrate;
(b) applying a layer of a photoresist composition over the one or more layer to be patterned;
(c) patternwise exposing the photoresist composition layer to actinic radiation;
(d) heating the exposed photoresist composition layer in a post-exposure bake process; and
(e) applying an organic developer to the photoresist composition layer to remove a portion of the photoresist composition
layer, thereby forming a photoresist pattern, wherein unexposed regions of the photoresist layer are removed by the developer
to form the photoresist pattern;

wherein the photoresist composition comprises:
a polymer comprising a first unit formed from a monomer of the following general formula (I):

wherein: R1 represents hydrogen or a C1 to C3 alkyl group; R2 represents a single bond or a C1 to C10 organic group; R3 represents a hydrogen atom or a C1 to C10 organic group; R4 each independently represents a hydrogen atom or a C1 to C10 organic group, those bonded to a common carbon atom together optionally forming a ring; and R5 together form a C5 or C6 monocyclic cycloalkyl group; and

a photoacid generator.

US Pat. No. 9,315,696

EPHEMERAL BONDING

Dow Global Technologies L...

1. A method of releasably attaching a semiconductor wafer to a carrier substrate comprising:
(a) providing a semiconductor wafer having a front side and a back side;
(b) providing a carrier substrate having an attachment surface;
(c) disposing a temporary bonding composition comprising a curable adhesive material, a release additive and a compatibilizer
between the front side of the semiconductor wafer and the attachment surface of the carrier substrate; and

(d) curing the adhesive material to provide a temporary bonding layer disposed between the front side of the semiconductor
wafer and the attachment surface of the carrier substrate;

wherein the temporary bonding layer adjacent to the attachment surface of the carrier substrate comprises a relatively lower
amount of the release additive and the temporary bonding layer adjacent to the front side of the semiconductor wafer comprises
a relatively higher amount of the release additive;

wherein the release additive is a polyether compound; and wherein the release additive is free of silicon.

US Pat. No. 9,416,204

POLYMER COMPRISING REPEAT UNITS WITH PHOTOACID-GENERATING FUNCTIONALITY AND BASE-SOLUBILITY-ENHANCING FUNCTIONALITY, AND ASSOCIATED PHOTORESIST COMPOSITION AND ELECTRONIC DEVICE FORMING METHOD

ROHM AND HAAS ELECTRONIC ...

1. A polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating repeat
units, wherein each of the photoacid-generating repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing
functionality selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein
the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof:
wherein the photoacid-generating repeat units have the structure
wherein
R1 is independently in each of the repeat units H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

L1 is independently in each of the repeat units —O—, —C(O)—O—, unsubstituted C6-18 arylene, or substituted C6-18 arylene;

m is independently in each of the repeat units 0 or 1;
L2 is independently in each of the repeat units an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, include one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR2, —PR2—, —C(O)—, —OC(O)O—, —N(R2)C(O)—, —C(O)N(R2)—, —OC(O)N(R2)—, —N(R2)C(O)O—, —S(O)—, —S(O)2—, —N(R2)S(O)2—, —S(O)2N(R2)—, —OS(O)2—, or —S(O)2O—, wherein R2 is H or C1-12 hydrocarbyl;

Z? is independently in each of the repeat units sulfonate (—SO2—), sulfonamidate, which is an anion of sulfonamide, —S(O)2N—R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl, or sulfonimidate, which is an anion of sulfonamide, —S(O)2N? S(O)2R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl; and

Q+ is photoacid-generating cation;

wherein at least one of L1, L2 (when m is 1), and Q+ comprises the base-solubility-enhancing functionality.

US Pat. No. 9,068,086

COMPOSITIONS FOR ANTIREFLECTIVE COATINGS

Dow Global Technologies L...

1. A composition comprising at least the following:
A) a cure catalyst selected from Formula A:
[NR1?R2?R3?R4?]+X?  (Formula A),

R1?, R2?, R3?, R4? are each independently selected from hydrogen, alkyl (linear or branched), substituted alkyl, aryl, or
substituted aryl;

X is a monovalent anion, and
wherein in Formula A, at least one of R1?, R2?, R3? or R4? is a methyl; and
B) a prepolymer formed from a first composition comprising the following:
a) a Compound F1 selected from Formula 1:

wherein Ra comprises one or more multiple bonds, provided that, if Ra comprises more than one multiple bond, these multiple
bonds are not in a conjugated configuration; and

R1, R2, and R3 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl or a
substituted alkyl;

b) a Compound F2 selected from Formula 2:

wherein Rb is selected from H or a saturated group comprising alkyl, alkylene, or alkylidene;
and R4, R5, and R6 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl
or a substituted alkyl;

c) a Compound F3 selected from Formula 3:

wherein Rc comprises more than one multiple bond, and these multiple bonds are in a conjugated configuration; and R7, R8,
and R9 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein R is alkyl or a substituted
alkyl; and

d) a Compound F4 selected from Formula 4:

wherein R10, R11, R12, and R13 are each independently selected from alkoxyl, hydroxyl, halide, OC(O)R, or OC(O)OR, wherein
R is alkyl or a substituted alkyl; and

wherein the molar ratio of F1/F4 is from 1/20 to 1/1; and
wherein Compound F4 is present in an amount from 10 to 60 mole percent, based on the sum moles of Compounds F1, F2, F3 and
F4.

US Pat. No. 9,267,077

CHROME-FREE METHODS OF ETCHING ORGANIC POLYMERS WITH MIXED ACID SOLUTIONS

Rohm and Haas Electronic ...

1. A method comprising:
a. providing a substrate comprising one or more organic polymers;
b. providing an aqueous acid solution consisting essentially of sulfuric acid, one or more organic acids selected from the
group consisting of alkane sulfonic acids and aryl sulfonic acids, one or more sources of Mn(II) ions and Mn(II) ions and
Mn(III) ions and one or more oxidizing agents selected from the group consisting of KMnO4, persulfates, ammonium, inorganic peroxides, organic peroxides, chlorites, chlorates, perchlorates, hypochlorites, osmiumtetroxide,
silver(II)-oxide, ozone, cerium(IV) and lead acetate wherein the oxidizing agents are in amounts to provide 1 mmol/L to 50
mmol/L of the Mn(II) ions; and

c. contacting the one or more organic polymers of the substrate with the aqueous acid solution to etch the one or more organic
polymers of the substrate.

US Pat. No. 9,295,153

METHOD OF MANUFACTURING A PATTERNED TRANSPARENT CONDUCTOR

Rohm and Haas Electronic ...

1. A method of manufacturing a patterned transparent conductor, comprising:
providing a silver ink core component containing silver nanoparticles dispersed in a silver carrier;
providing a shell component containing a film forming polymer dispersed in a shell carrier;
providing a substrate;
coelectrospinning the silver ink core component and the shell component to form a core shell fiber having a core and a shell
surrounding the core, wherein the silver nanoparticles are in the core;

depositing the core shell fiber on the substrate to provide a deposited core shell fiber;
selectively treating a portion of the deposited core shell fiber to provide a patterned transparent conductor, wherein the
patterned transparent conductor has a treated region and a non-treated region;

wherein the treated region comprises a plurality of electrically interconnected silver miniwires and wherein the treated region
is an electrically conductive region; and, wherein the non-treated region is an electrically insulative region.

US Pat. No. 9,127,113

POLYSTYRENE-POLYACRYLATE BLOCK COPOLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

ROHM AND HAAS ELECTRONIC ...

1. A block copolymer comprising:
40 to 60 volume percent of a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer is an alkylstyrene;
where the alkylstyrene is o-methylstyrene, p-methylstyrene, m-methylstyrene, ?-methylstyrene, o-ethylstyrene, m-ethylstyrene,
p-ethylstyrene, ?-methyl-p-methylstyrene, 2,4-dimethylstyrene, p-tert-butylstyrene, or a combination thereof; and where the
first block has a polydispersity index of 1.2 or less; and

40 to 60 volume percent of a second block derived from an acrylate monomer; where the acrylate monomer has a structure represented
by the formula (2);


where R1 is a hydrogen or an alkyl group having 1 to 10 carbon atoms and R2 is a hydrogen, a C1-10 alkyl, a C3-10 cycloalkyl, a C2-10 fluoroalkyl group, or a C7-10 aralkyl group; where a chi parameter that measures interactions between the first block and the second block is greater than
or equal to about 0.05, when measured at 240° C.; and where the second block has a polydispersity index of 1.2 or less; and
where the block copolymer comprises cylindrical and/or lamellar domains and has an interdomain spacing of less than or equal
to about 25 nanometers.

US Pat. No. 9,274,427

COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY

Rohm and Haas Electronic ...

1. A composition suitable for use in forming a topcoat layer over a layer of photoresist, the composition comprising:
a first resin, a second resin and a third resin which are different from each other,
wherein the first resin comprises one or more fluorinated groups and is present in the composition in a larger proportion
by weight than the second and third resins individually,

wherein the second resin has a lower surface energy than a surface energy of the first resin and the third resin,
wherein the second resin is substantially immiscible with the first resin, and
wherein the third resin comprises one or more strong acid groups.

US Pat. No. 9,209,028

ION IMPLANTATION METHODS

Rohm and Haas Electronic ...

1. A method of forming an ion implanted region in a semiconductor device, comprising:
(a) providing a semiconductor substrate having a plurality of regions to be ion implanted;
(b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically
amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent;

(c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix
polymer that is water insoluble; an acid generator chosen from thermal acid generators, photoacid generators and combinations
thereof; and a solvent;

(d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid
generator;

(e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum
from the substrate; and

(f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask.

US Pat. No. 9,437,431

ELECTRONIC DEVICE MANUFACTURE

Rohm and Haas Electronic ...

1. A method for fabricating an electronic device, comprising:
(a) providing a chemically-amplified positive-acting photoresist relief image on a substrate;
(b) applying a curable composition over the photoresist relief image to provide a composite of the photoresist and curable
composition, wherein the curable composition comprises a silicon-containing component;

(c) treating the composite to provide relief image of photoresist encased by curable composition;
(d) exposing the composite to activating radiation to permit hardening of the curable composition and then development to
remove the photoresist, wherein the curable composition crosslinks in presence of acid that migrates from the photoresist,

wherein following removing the photoresist, the curable composition remains in a relief image of decreased pitch relative
to the photoresist.

US Pat. No. 9,296,915

TOUGHENED ARYLCYCLOBUTENE POLYMERS

Dow Global Technologies L...

1. A composition comprising: a) a curable material chosen from one or more arylcyclobutene monomers, one or more polymers
comprising one or more arylcyclobutene monomers as polymerized units, and mixtures thereof; b) one or more toughening agents
comprising as polymerized units —(O—CH2CHR)—, wherein R is a C2-8 hydrocarbyl moiety; and c) one or more organic solvents; wherein the one or more toughening agents are free of —(OCH2CH(CH3))— as polymerized units, and wherein the compositions are substantially free of release additives.

US Pat. No. 9,209,067

GAP-FILL METHODS

Rohm and Haas Electronic ...

1. A gap-fill method, comprising:
(a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a
plurality of gaps to be filled;

(b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable
polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and
a crosslinkable group pendant to the backbone; and

(c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink.
US Pat. No. 9,153,357

ADHESION PROMOTER

Rohm and Haas Electronic ...

1. A composition comprising: one or more hydrolyzed amino-alkoxysilanes having a protected amino moiety; water; and organic
solvent.
US Pat. No. 9,228,262

PLATING CATALYST AND METHOD

Rohm and Haas Electronic ...

1. A process for electroless plating a metal on non-conductive surface, the process comprises:
dipping a substrate to be plated into a solution comprising a precious metal nanoparticle and a polymer, the polymer comprises
a carboxyl group and a nitrogen atom within a repeating unit of the polymer and a mole ratio of the precious metal nanoparticle
to the carboxyl group of the polymer is 1:0.1 to 1:10; and

conducting electroless plating of the substrate without an accelerating step.
US Pat. No. 9,228,092

ELECTROCHEMICALLY DEPOSITED INDIUM COMPOSITES

Rohm and Haas Electronic ...

1. A composition comprising one or more sources of indium ions, one or more epihalohydrin copolymers, one or more dispersing
agents chosen from silicone dispersants, polyalkoxylated ethers, glycol ethers and cationic surface-active agents and one
or more ceramic materials.

US Pat. No. 9,206,519

INDIUM COMPOSITIONS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) providing an indium metal electroplating composition consisting of one or more sources of indium ions in amounts of 10
g/L to 70 g/L; one or more acids or salts thereof; one or more hydrogen suppressing epihalohydrin copolymers, the one or more
hydrogen suppressing epihalohydrin copolymers are composed of an epihalohydrin and one or more nitrogen-containing organic
compounds; optionally, one or more additives selected from the group consisting of surfactants, chelating agents, levelers
and suppressors; and water;

c) immersing the substrate in the indium metal electroplating composition; and
d) electroplating an indium metal on the substrate.

US Pat. No. 9,175,413

COPPER ELECTROPLATING SOLUTION AND METHOD OF COPPER ELECTROPLATING

Rohm and Haas Electronic ...

1. A method of copper electroplating comprising:
a) providing a base comprising vias, through-holes or vias and through-holes;
b) immersing the base comprising the vias, through-holes or vias and through-holes in a copper electroplating solution comprising
water soluble copper compounds selected from the group consisting of copper sulfate and copper pyrophosphate; ninhydrin; and
compounds selected from the group consisting of:

M-SO3—(CH2)a—S—(CH2)b—SO3-M ;  (1)

M-SO3—(CH2)a—O2—CH2—S—CH2—O—(CH2)b—SO3-M;  (2)

M-SO3—(CH2)a—S—S—(CH2)b—SO3-M;  (3)

M-SO3—(CH2)a—O—CH2—S—S—CH2—O—(CH2)b—SO3-M;  (4)

M-SO3—(CH2)a—S—C(?S)—S—(CH2)b—SO3-M;  (5)

M-SO3—(CH2)a—O—CH2—S—C(?S)—S—CH2—O—(CH2)b—SO3-M;  (6)

 wherein a and b in compounds (1)-(6) are integers from 3 to 8, M is hydrogen or an alkali metal element; and
c) electroplating copper on the base and in the vias, or through-holes or in the vias and through-holes.

US Pat. No. 9,067,909

PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

19. A photoacid generator compound having the formula (2b)
wherein
R1 is

*?L-SO3?M+],
wherein L is a substituted C1-50 divalent group, L2, having the structure
wherein X is an unsubstituted or substituted C1-20 alkylene; R7 and R8 are each independently fluorine, or partially fluorinated C1-12 alkyl, or perfluorinated C1-12 alkyl; and M+ is a cation selected from disubstituted iodonium ions and trisubstituted sulfonium ions;
R2 and R3 are hydrogen;

R4 has the structure

wherein m is zero or 1, Y is an unsubstituted or substituted C1-20 alkylene, and W2 is an unsubstituted or substituted monovalent C5-20 alicyclic group.

US Pat. No. 9,229,319

PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

11. A copolymer comprising repeat units derived from an acid-labile monomer comprising

an aliphatic, lactone-containing monomer comprising

a base-soluble monomer comprising

a photoacid-generating monomer comprising

a neutral aromatic monomer comprising
or a combination thereof, wherein Ra is —H, —F, —CH3, or —CF3; Rc is halogen, C1-12 hydrocarbyl, C1-6 perfluoroalkyl, C3-6 perfluorocycloalkyl; Rd is C1-10 alkyl, C3-10 cycloalkyl, C1-6perfluoroalkyl, C3-6 perfluorocycloalkyl, C1-10 alkenyl, C3-10 cycloalkenyl, or C6-12 aryl; Re is C1-10 alkylene or C3-10 cycloalkylene; n is 0 or 1; and q is 0, 1, 2, 3, 4, or 5.

US Pat. No. 9,128,372

DENDRITIC COMPOUNDS, PHOTORESIST COMPOSITIONS AND METHODS OF MAKING ELECTRONIC DEVICES

Rohm and Haas Electronic ...

1. A dendritic compound, comprising:
an anionic dendron comprising a focal point comprising an anionic group and a linking group; and
a photoreactive cation;
wherein the dendritic compound is of general formula (I):

wherein:
L is a substituted or unsubstituted branched C1-30 aliphatic group, C5-30 aromatic group or C6-30 aralkyl group, having two or more branches with a functional group on each branch, wherein the functional groups are independently
chosen from amine, ether, carbonyl, ester, amide, sulfate, sulfonate, sulfonimide, or a combination comprising at least one
of the foregoing groups;

X is a substituted or unsubstituted C1-30 alkyl, C1-30 fluoroalkyl, C3-30 cycloalkyl or C3-30 fluorocycloalkyl group, optionally comprising an ether, ester, carbonate, amine, amide, urea, sulfate, sulfonate, or sulfonamide
containing group;

T is a terminal group comprising a substituted or unsubstituted, C5 or greater cyclic, polycyclic, or fused polycyclic aliphatic group, aromatic group, acid labile group or cyclic lactone, wherein
one or more carbon atom in the terminal group can be substituted with a heteroatom;

n is a generation number chosen from integers of 2 or more;
y is the number of linking groups L within a given dendritic generation n and is chosen from integers of 1 or more;
w is the number of terminal branches of linking groups L within the final dendritic generation n and is chosen from integers
of 2 or more;

wherein for a first generation (n=1), L is covalently linked to X, and for any subsequent generation (n=2 or greater), L of
the subsequent generation is connected to a group L of the previous generation (n?1), and each terminal branch of linking
groups L within the final dendritic generation terminates in a terminal group T; and

Z+ is a photoreactive cation.

US Pat. No. 9,070,548

METAL HARDMASK COMPOSITIONS

Rohm and Haas Electronic ...

1. A composition comprising at least the following A and B:
A) a polymer comprising, in polymerized form, at least one monomer that comprises at least one hydroxyl group; and
B) an organometal compound comprising at least one metal selected from Ti, Zr, Hf, Co, Mn, Zn, or combinations thereof, and
wherein the organometal compound is present in an amount greater than 50 weight percent, based on the sum weight of A and
B; and

wherein the monomer that comprises at least one hydroxyl group is selected from HEMA, OH-styrene, or combinations thereof.

US Pat. No. 9,382,626

STABLE TIN FREE CATALYSTS FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) applying an aqueous catalyst solution to the substrate, the aqueous catalyst solution comprises one or more antioxidants,
nanoparticles of palladium metal and one or more compounds chosen from polymers having a formula:

wherein R1, R2, R3, R4, R5, R6 and R7 are the same or different and chosen from —H, —CH2COOX, —C(O)—CH3, —C(O)—(CH2)z—CH3 and
wherein n is an integer of at least 2, z is an integer of at least 1 and X is —H or a counter cation, and a reaction product
of a polymer having a formula:
wherein R9, R10, R11, R12, R13, R14, and R15 are the same or different and are chosen from —H, —CH3, —CH2CH3, —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3, —(CH2CHR8O)y—H, with the proviso that at least one of R9, R10, R11, R12, R13, R14, and R15 is —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3 or —(CH2CHR8O)y—H, wherein R8 is —H or —CH3, x and y are an integer of at least 1 and n and z are as described above, and a quaternary compound having a formula:
wherein m is an integer from 1 to 16, Y is halogen, Z? is a counter anion, R16, R17 and R18 are the same or different and are —H, —CH3 or —(CH2)p—CH3, and R19 is —H or —CH3 and p is an integer of 1 to 9, and one or more cross-linking agents, the aqueous catalyst solution is free of tin; and
c) electrolessly depositing metal onto the substrate using an electroless metal plating bath.

US Pat. No. 9,182,662

PHOTOSENSITIVE COPOLYMER, PHOTORESIST COMPRISING THE COPOLYMER, AND ARTICLES FORMED THEREFROM

ROHM AND HAAS ELECTRONIC ...

11. A copolymer comprising the polymerized product of:
an electron-sensitizing acid deprotectable monomer having the formula (III) or (IV) and a comonomer:

wherein each Ra is independently H, F, —CN, CH3, or CF3,

Rc is C1-10 alkyl or C3-10 cycloalkyl,

Rd, Re, Rf, and Rg are independently C1-6 perfluoroalkyl or C3-6 perfluorocycloalkyl,

S2 is a C1-10 alkylene group, or a C3-10 cycloalkylene group,

x is an integer of from 1 to 20, y is an integer of from 1 to 20,
m is an integer of from 0 to 5, n is an integer of from 1 to 5, and
p is an integer of from 0 to 2x+6.

US Pat. No. 9,066,425

METHOD OF MANUFACTURING A PATTERNED TRANSPARENT CONDUCTOR

Rohm and Haas Electronic ...

1. A method of manufacturing a patterned conductor, comprising:
providing a conductivised substrate, wherein the conductivised substrate comprises a substrate and an electrically conductive
layer;

providing an electrically conductive layer etchant;
providing a spinning material, wherein the spinning material comprises a masking material and a carrier;
providing a masking fiber solvent;
forming a plurality of masking fibers by processing the spinning material by a process selected from the group consisting
of electrospinning, gas jet spinning, gas jet electrospinning, centrifuge spinning, needleless electrospinning, and melt electrospinning
and depositing the plurality of masking fibers onto the electrically conductive layer;

optionally, compressing the plurality of masking fibers on the electrically conductive layer;
exposing the electrically conductive layer to the electrically conductive layer etchant, wherein the electrically conductive
layer that is uncovered by the plurality of masking fibers is removed from the substrate, leaving an interconnected conductive
network on the substrate covered by the plurality of masking fibers; and,

exposing the plurality of masking fibers to the masking fiber solvent, wherein the plurality of masking fibers are removed
to uncover the interconnected conductive network on the substrate.

US Pat. No. 9,365,943

METHOD OF ELECTROPLATING UNIFORM COPPER LAYERS

Rohm and Haas Electronic ...

1. A method comprises:
a) providing an electroplating composition comprising i) one or more sources of copper ions, ii) 5-100 ppb of 3-mercaptopropane
sulfonic acid, salts thereof, or mixtures thereof and 1 mg/L to 50 mg/L of sulfopropyldisulfide, salts thereof, or mixtures
thereof, wherein the 5-100 ppb of 3-mercaptopropane sulfonic acids and salts thereof, or mixtures thereof are added to the
electroplating composition at an initial make-up of the electroplating composition without adding additional amounts of the
3-mercaptopropane sulfonic acid, salts thereof, or mixtures thereof during the life of the electroplating composition and
electroplating cycle, iii) one or more additional brighteners, and iv) one or more levelers in amounts of 0.25 ppm to 1000
ppm, wherein the levelers are reaction products of an amine with an epoxide, wherein the amine has a formula:


wherein R1, R2 and R3 are independently chosen from H, (C1-C12)alkyl, (C2-C12)alkenyl, and aryl and provided that R1 and R2 are not both H, and the epoxide has a formula:


where Y1 and Y2 are independently chosen from H and (C1-C4)alkyl, R6 and R7 are independently chosen from H, CH3 and OH and m=1-6 and n=1-20;

b) immersing a substrate into the electroplating composition, the substrate includes a plurality of through-holes, wherein
knees and walls of the plurality of through-holes are coated with a first copper layer; and

c) electroplating a substantially uniform second copper layer on the first copper layer of the knees and the walls of the
plurality of through-holes, wherein a throwing power of the knees is 80% and greater and a throwing power of the walls of
the plurality of through-holes is 80% and greater.

US Pat. No. 9,188,864

PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

Rohm and Haas Electronic ...

1. A method of forming a photolithographic pattern by negative tone development, comprising:
(a) providing a substrate comprising one or more layer to be patterned over a surface of the substrate;
(b) applying a layer of a photoresist composition over the one or more layer to be patterned;
(c) patternwise exposing the photoresist composition layer to actinic radiation;
(d) heating the exposed photoresist composition layer in a post-exposure bake process; and
(e) applying an organic developer to the photoresist composition layer, wherein unexposed portions of the photoresist layer
are removed by the developer, leaving a photoresist pattern over the one or more layer to be patterned;

wherein the photoresist comprises:
a first polymer which is acid sensitive;
a plurality of second polymers formed from a monomer having the following general formula (I):

wherein: P is a polymerizable functional group; Z is a spacer unit chosen from optionally substituted linear or branched aliphatic
and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO—
and —CONR1—, wherein R1 is chosen from hydrogen and substituted and unsubstituted C1 to C10 linear, branched and cyclic hydrocarbons; n is an integer
from 0 to 5; and R is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons;

wherein the second polymers are acid insensitive and free of fluorine and silicon, and wherein the second polymers have a
surface energy lower than a surface energy of the first polymer;

a photoacid generator; and
a solvent.
US Pat. No. 9,187,838

THIN-TIN TINPLATE

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a steel substrate;
b) contacting the steel substrate with a pre-plating composition comprising one or more organic sulfonic acids, salts or anhydrides
thereof and one or more grain refiners, wherein the pre-plating composition does not include metal or metal ions;

c) electrolytically polarizing the steel substrate in contact with the pre-plating composition by anodic polarization followed
by cathodic polarization to activate a surface of the steel substrate; and

d) electrolytically plating a tin or a tin alloy layer on the activated surface of the steel substrate with a tin or a tin
alloy electroplating bath.

US Pat. No. 9,128,379

PHOTOLITHOGRAPHIC METHODS

Rohm and Haas Electronic ...

1. A method of forming an electronic device, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) forming a photoresist layer over the one or more layers to be patterned;
(c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a basic
quencher, a polymer and an organic solvent;

(d) exposing the layer to actinic radiation; and
(e) developing the exposed film with an organic solvent developer.
US Pat. No. 9,130,110

METHOD OF STRIPPING HOT MELT ETCH RESISTS FROM SEMICONDUCTORS

Rohm and Haas Electronic ...

1. A method comprises:
a) providing a semiconductor substrate comprising a PN junction, a selective emitter on a front side and an electrode comprising
aluminum on a back side of the semiconductor substrate with the PN junction, wherein the selective emitter comprises zones
of low sheet resistivity;

b) selectively applying a hot melt etch resist consisting of one or more hydrogenated rosin resins, one or more fatty acids
or salts thereof and one or more optical brighteners to the zones of low sheet resistivity of the selective emitter on the
semiconductor substrate with the PN junction;

c) applying an etchant to exposed portions of the selective emitter with the PN junction to etch the exposed portions; and
d) applying a stripper consisting of 5 g/L to 50 g/L potassium carbonate and 0.1 g/L to 10 g/L potassium silicate, water and
optionally one or more antifoaming agents to the semiconductor substrate with the PN junction to remove the hot melt etch
resist from the selective emitter.

US Pat. No. 9,136,037

ADHESION PROMOTER

Rohm and Haas Electronic ...

1. A composition comprising: a hydrolyzed amino-alkoxysilane having a protected amino moiety; water; and organic solvent.
US Pat. No. 9,303,326

ACIDIC GOLD ALLOY PLATING SOLUTION

Rohm and Haas Electronic ...

1. An acidic gold alloy plating solution consisting of gold cyanide or salt thereof, cobalt ions, one or more acids or salts
thereof selected from the group consisting of aminotrimethylene phosphonic acid, 1-hydroxyethyl-idene-1,1-diphosphonic acid,
ethylenediamine tetramethylene phosphonic acid, diethylene-triamine pentamethylene phosphonic acid, phosphoric acid, sulfurous
acid, amino acids and carboxylic acids wherein the carboxylic acids are selected from the group consisting of citric acid,
tartaric acid, oxalic acid, succinic acid, adipic acid, malic acid, lactic acid, pyridine carboxylic acids, thiocarboxylic
acids and benzoic acid, hexamethylene tetramine in amounts between 0.05 g/L and 10 g/L, and at least one nitrogen containing
compound selected from the group consisting of alkanolamines, dialkanolamines, and trialkanolamines, the acidic gold alloy
plating solution has a pH between 3 and 6 and water and optionally antifungal agents and optionally surfactants.

US Pat. No. 9,234,282

PLATING CATALYST AND METHOD

Rohm and Haas Electronic ...

1. A method comprising:
(a) providing a substrate having a plurality of through-holes;
(b) applying a composition comprising 0.5 to 100 ppm of a zero-valent metal, a stabilizer compound and water; wherein the
zero-valent metal is selected from the group consisting of palladium, silver, cobalt, nickel, gold, copper and ruthenium;
wherein the stabilizer compound has the formula

wherein R?H or (C1-C6)alkyl; each R1 is independently selected from the group consisting of H, (C1-C6)alkyl and Z; Z?(C2-C6)alkenyl-Z1 or (CR2R3)aZ1; each R2 and R3 are independently selected from the group consisting of H, hydroxyl, (C1-C6)alkyl, hydroxy(C1-C6)alkyl, C(O)—(C1-C6)alkyl, (C1-C6)alkyl-C(O)—(C1-C6)alkyl, CO2R4 and NR5R6; R4?H, (C1-C6)alkyl, hydroxy(C1-C6)alkyl or (C1-C4)alkoxy(C1-C6)alkyl; R5 and R6 are independently selected from the group consisting of H, (C1-C6)alkyl and (CR2R3)aZ2; Z1?C(S)SH, CO2H, or C(O)NR5R6; Z2?C(O)R4 or CO2R4; and a=0-6; wherein at least one R1 is Z to the surface of the through-holes; and then
(c) electrolessly depositing a metal on the surface of the through-holes;wherein the composition has a pH of from >7 to 14; and wherein the composition is free of precipitate for 3 months upon storage
at 20° C.
US Pat. No. 9,228,268

METHOD OF ELECTROPLATING SILVER STRIKE OVER NICKEL

Rohm and Haas Electronic ...

1. A method comprising:
a) providing an aqueous solution consisting of one or more sources of silver ions, one or more imide derivatives chosen from
hydantoin, 1-methylhydantoin, 1,3-dimethylhydantoin, 5,5-dimethylhydantoin, 1-methanol-5,5-dimethylhydantoin and 5,5-diphenylhydantoin,
sulfamic acid or salts of sulfamic acid in amounts of 5 g/L to 100 g/L and one or more alkali metal nitrates in amounts of
3 g/L to 30 g/L, and one or more optional components chosen from surfactants, buffers, levelers, anti-tarnish agents and ductility
agents, the solution is cyanide-free;

b) contacting a substrate comprising nickel or nickel alloy with the solution;
c) electroplating a silver strike layer 0.01 ?m to 0.2 ?m thick onto the nickel or nickel alloy of the substrate; and
d) electroplating a second silver layer onto the silver strike layer, wherein the one or more alkali metal nitrates of the
silver strike layer provide for the second silver layer to have a mirror bright appearance.

US Pat. No. 9,322,106

TIN OR TIN ALLOY ELECTROPLATING SOLUTION

Rohm and Haas Electronic ...

1. A manufacturing method for an additive for a tin or tin alloy electroplating solution, comprising:
(1) a reaction product comprising reacting glutaraldehyde with at least one hydroxyl group containing compound in the presence
of an acid in a reaction solution to form the reaction product; and

(2) reacting at least one amine compound with the reaction product in the reaction solution to form the additive.
US Pat. No. 9,200,168

METAL SURFACE TREATMENT AQUEOUS SOLUTION AND METHOD FOR INHIBITING WHISKERS ON A METAL SURFACE

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a tin or tin alloy plating film surface treatment aqueous solution consisting of an organic compound chosen from
citric acid, malic acid, maleic acid, oxalic acid, glutaric acid, tartaric acid, lactic acid, gluconic acid, picolinic acid,
iminodiacetic acid or salts thereof and a nitrogen containing compound chosen from benzotriazole or imidazole, water and optionally
one or more additives selected from the group consisting of surfactants, solvents and disinfectants, the pH of the surface
treatment aqueous solution is 2.5 or lower; and

b) applying the surface treatment aqueous solution to a tin or tin alloy to inhibit whisker formation on the tin or tin alloy.
US Pat. No. 9,146,470

PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME

ROHM AND HAAS ELECTRONIC ...

1. A method of forming an electronic device comprising:
(a) applying a layer of a photoresist composition on a surface of a substrate;
(b) patternwise exposing the photoresist composition layer to activating radiation; and
(c) developing the exposed photoresist composition layer to provide a resist relief image,
wherein the photoresist composition comprises:
an acid-sensitive polymer, and
a compound having the formula (I):
[A-(CHR1)p]k-(L)-(CH2)m—(C(R2)2)nSO3?Z+  (I)

wherein
A is a substituted or unsubstituted, polycyclic, or fused polycyclic C5 or greater cycloaliphatic group optionally comprising O, S, N, F, or a combination comprising at least one of the foregoing,

R1 is H, a single bond, or a substituted or unsubstituted C1-30 alkyl group, wherein when R1 is a single bond, R1 is covalently bonded to a carbon atom of A,

each R2 is independently H, F, or C1-4 fluoroalkyl, wherein at least one R2 is not hydrogen,

L is a linking group comprising a sulfonate group, a sulfonamide group, or a C1-30 sulfonate or sulfonamide-containing group,

Z+ is an organic or inorganic cation, and

p is an integer of 0 to 10, k is 1 or 2, m is an integer of 2-10, and n is an integer of 1 to 10.
US Pat. No. 9,136,123

HARDMASK SURFACE TREATMENT

Rohm and Haas Electronic ...

1. A hardmask composition comprising: an organo-metal compound; a surface treating polymer having a surface energy of 20 to
40 erg/cm2 and comprising as polymerized units one or more monomers comprising a surface treating moiety chosen from hydroxyl, protected
hydroxyl, protected carboxyl, and mixtures thereof; and a solvent; wherein the organo-metal compound is polymeric.
US Pat. No. 9,080,068

GALLIUM FORMULATED INK AND METHODS OF MAKING AND USING SAME

Rohm and Haas Electronic ...

1. A method for depositing a Group 1b/gallium/(optional indium)/Group 6a material on a substrate, comprising:
providing a substrate;
providing a gallium formulated ink, comprising, as initial components:
(a) a Group 1b/gallium/(optional indium)/Group 6a system which comprises a combination of, as initial components:
a gallium component, comprising, as initial components: gallium, a stabilizing component, an additive and a gallium carrier;
a selenium component;
an organic chalcogenide component: comprising at least one organic chalcogenide having a formula selected from the group consisting
of RZ—Z?R? and R2—SH; wherein Z and Z? are independently selected from the group consisting of sulfur, selenium and tellurium; wherein R is
selected from the group consisting of H, C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, a C1-20 mercaptoalkyl group and an ether group; wherein R? and R2 are selected from a C1-20 alkyl group, a C6-20 aryl group, a C1-20 hydroxyalkyl group, a C1-20 mercaptoalkyl group and an ether group;

a Group 1b component comprising, as an initial component, at least one of CuCl2 and Cu2O;

optionally, a bidentate thiol component;
optionally, an indium component; and,
(b) a liquid carrier component;
wherein the stabilizing component is selected from the group consisting of 1,3-propanedithiol, beta-mercaptoethanol, analogs
thereof and mixtures thereof;

wherein the additive is selected from the group consisting of pyrazine; 2-methylpyrazine; 3-methylpyrazole; methyl 2-pyrazinecarboxylate;
pyrazole; praxadine; pyrazine carboxamide; pyrazine carbonitrile; 2,5-dimethylpyrazine; 2,3,5,6-tetramethylpyrazine; 2-aminopyrazine;
2-ethylpyrazine; quinoxaline; quinoxaline substituted with a C1-5 alkyl group; 2-pyrazine carboxylic acid; 2-methylquinoxaline; 2,3-pyrazinedicarboxamide; 2,3-pyrazinedicarbonitrile; pyrrolidino-1-cyclohexene;
pyrrolidino-1-cyclopentene; phenazine; phenazine substituted with a C1-5 alkyl group; isoquinoline; isoquinoline substituted with a C1-5 alkyl group; indoles; indoles substituted with a C1-5 alkyl group; imidazole; imidazole substituted with a C1-5 alkyl group; tetrazole; tetrazole substituted with a C1-5 alkyl group; 1,5-diazabicyclo[4.3.0]non-5-ene; and 1,8-diazabicyclo[5.4.0]undec-7-ene;

wherein the gallium carrier is selected from the group consisting of ethylene diamine; diethylenetriamine; tris(2-aminoethyl)amine;
triethylenetetramine; n-butylamine; n-hexylamine; octylamine; 2-ethyl-1-hexylamine; 3-amino-1-propanol; 1-amino-2-propanol;
1,3-diaminopropane; 1,2-diaminopropane; 1,2-diaminocyclohexane; pyridine; pyrrolidine; 1-methylimidazole; tetramethylguanidine;
2-methylpyrazine and mixtures thereof; and,

wherein the Group 1b/gallium/(optional indium)/Group 6a system is stable in the liquid carrier component;
depositing the gallium formulated ink on the substrate;
heating the deposited gallium formulated ink to eliminate the gallium carrier, the first liquid carrier, the second liquid
carrier and the, optional, third liquid carrier leaving a Group 1b/gallium/(optional indium)/Group 6a material on the substrate;
and,

optionally, annealing the Group 1b/gallium/(optional indium)/Group 6a material;
wherein the Group 1b/gallium/(optional indium)/Group 6a material is according to the formula NaLCumGadIn(1?d)S(2+e)(1?f)Se(2+e)f, wherein 0?L?0.25, 0.25?m?1.5, 0?d?1, ?0.2?e?0.5, 0?f?1; wherein 0.5?(L+m)?1.5 and 1.8?{(2+e)f+(2+e)(1?f)}?2.5.

US Pat. No. 9,243,325

VAPOR DELIVERY DEVICE, METHODS OF MANUFACTURE AND METHODS OF USE THEREOF

ROHM AND HAAS ELECTRONIC ...

1. A delivery system for a liquid precursor compound comprising:
a delivery device having an inlet port and an outlet port, the delivery device containing a liquid precursor compound;
a first proportional valve; wherein the delivery device is in operative communication with a first proportional valve; wherein
the first proportional valve is operative to control the flow of a carrier gas based on an applied voltage, where the first
proportional valve is in fluid communication with a first stream that contacts the delivery device;

a second proportional valve in fluid communication with a second stream that bypasses the delivery device and contacts the
first stream at a point downstream of the delivery device, where both the first stream and the second stream emanate from
a single stream;

a physical-chemical sensor, the physical-chemical sensor being disposed downstream of the delivery device and being operative
to analyze chemical contents of a fluid stream emanating from the delivery device; the physical-chemical sensor being in communication
with the first proportional valve; and

a first pressure/flow controller being in operative communication with the physical-chemical sensor and with the first proportional
valve; wherein the delivery system is operative to deliver a substantially constant number of moles of a liquid precursor
compound vapor per unit volume of the carrier gas to a plurality of reactors that are communication with the delivery system;
the liquid precursor compound being in a liquid state in the delivery device;

a pressure sensor, the pressure sensor being disposed downstream of the delivery device and in fluid communication with the
delivery device and the second proportional valve; and

a second pressure/flow controller being in operative communication with the pressure sensor, where the second pressure/flow
controller is in electrical communication with the second proportional valve.

US Pat. No. 9,122,159

COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY

Rohm and Haas Electronic ...

1. A composition suitable for use in forming a topcoat layer over a layer of photoresist, the composition comprising:
a matrix polymer which is aqueous alkali soluble;
a first additive polymer which is aqueous alkali soluble and comprises polymerized units of a monomer of the following general
formula (I):


wherein: R1 is hydrogen or a C1 to C6 alkyl or fluoroalkyl group; R2 is a C3 to C8 branched alkylene group; and R3 is a C1 to C4 fluoroalkyl group; and

wherein the first additive polymer is present in the composition in an amount less than the matrix polymer, the first additive
polymer has a lower surface energy than a surface energy of the matrix polymer and the first additive polymer is substantially
immiscible with the matrix polymer; and

a solvent system comprising a mixture of different solvents to achieve effective phase separation of the first additive polymer
from other polymer(s) in the composition;

wherein a layer of the composition in a dried state has a water receding contact angle of from 75 to 85°.
US Pat. No. 9,435,045

REACTION PRODUCTS OF GUANIDINE COMPOUNDS OR SALTS THEREOF, POLYEPOXIDES AND POLYHALOGENS

Rohm and Haas Electronic ...

1. A composition comprising one or more sources of metal ions, and one or more compounds comprising a reaction product of
one or more guanidine compounds or salts thereof, one or more polyepoxide compounds and one or more polyhalogen compounds
wherein the one or more polyhalogens have a formula:
X1—R16—X2   (VII)
wherein X1 and X2 may be the same or different and are halogens chosen from chlorine, bromine, fluorine and iodine; R16 is a moiety having formula:
—CH2—R17—CH2—  (VIII)
wherein R17 is a linear or branched, substituted or unsubstituted (C1-C18)alkyl, substituted or unsubstituted (C6-C12)cycloalkyl, substituted or unsubstituted (C.sub.6-C15)aryl, —CH2—O—(R18—O)q—CH2— where R18 is a substituted or unsubstituted, linear or branched (C2-C10)alkyl and q is an integer of 1-10.

US Pat. No. 9,169,576

ELECTROLYTIC COPPER PLATING SOLUTION AND METHOD OF ELECTROLYTIC COPPER PLATING

Rohm and Haas Electronic ...

1. An electrolytic copper plating solution comprising copper sulfate, copper cyanide or copper pyrophosphate; a compound shown
by general formula (1):
wherein R1 to R6 are, independent of each other, and are alkyl groups with carbon numbers of 1 to 4 which are optionally substituted with hydrogen
atoms or functional groups; and compounds selected from the group consisting of:
(1) M-SO3—(CH2)a—S—(CH2)b—SO3-M;

(2) M-SO3—(CH2)a—O—CH2—S—CH2—O—(CH2)b—SO3-M;

(3) M-SO3—(CH2)a—S—S—(CH2)b—SO3-M;

(4) M-SO3—(CH2)a—O—CH2—S—S—CH2—O—(CH2)b—SO3-M;

(5) M-SO3—(CH2)a—S—C(?S)—S—(CH2)b—SO3-M; and

(6) M-SO3—(CH2)a—O—CH2—S—C(?S)—S—CH2—O—(CH2)b—SO3-M,
wherein a and b in compounds (1)-(6) are integers from 3 to 8, M is hydrogen or an alkali metal element.
US Pat. No. 9,171,720

HARDMASK SURFACE TREATMENT

Rohm and Haas Electronic ...

1. A hardmask layer disposed on an electronic device substrate, the hardmask layer comprising a majority of inorganic domains
having (-M-O—)n linkages, where M is a Group 3 to Group 14 metal and n>1, and having a surface having a water contact angle of ?60°.

US Pat. No. 9,482,945

PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

Rohm and Haas Electronic ...

7. A photoresist composition, comprising:
a first polymer comprising an acid labile group;
a second polymer comprising:
a first unit formed from a first monomer having the following general formula (I):

wherein: P is a polymerizable functional group; R1 is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons; Z is a spacer unit chosen
from substituted and unsubstituted linear or branched aliphatic and aromatic hydrocarbons, and combinations thereof, optionally
with one or more linking moiety chosen from —O—, —S— and —COO—; and n is an integer from 0 to 5; and

a second unit formed from a second monomer having a basic moiety and an allyl polymerizable group, wherein the first monomer
and the second monomer are different;

wherein the second polymer is insoluble in alkaline developer, is free of acid-labile groups, and has a surface energy lower
than a surface energy of the first polymer;

a photoacid generator; and
a solvent.

US Pat. No. 9,182,669

COPOLYMER WITH ACID-LABILE GROUP, PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

9. A copolymer comprising repeat units derived from
an acid-labile monomer having formula (I)
wherein
R1 is an unsubstituted or substituted C1-18 alkyl;

R2 is an unsubstituted or substituted C1-18 alkyl, an unsubstituted or

substituted C7-18 arylalkyl, or an unsubstituted or substituted C6-18 aryl;

R3 is —H, —F, —CH3, or —CF3; and

Ar is an unsubstituted or substituted C6-18 aryl;

provided that R2 and Ar collectively include at least nine carbon atoms;

a lactone-substituted monomer comprising

a base-soluble monomer comprising

 and
a photoacid-generating monomer comprising

US Pat. No. 9,148,969

METHOD OF MANUFACTURING HIGH ASPECT RATIO SILVER NANOWIRES

Rohm and Haas Electronic ...

1. A process for manufacturing silver nanowires, comprising:
providing a silver ink core component containing ?60 wt % silver nanoparticles dispersed in a silver carrier;
providing a shell component containing a film forming polymer dispersed in a shell carrier;
providing a substrate;
coelectrospinning the silver ink core component and the shell component depositing on the substrate a core shell fiber having
a core and a shell surrounding the core, wherein the silver nanoparticles are in the core; and,

treating the silver nanoparticles to form a population of silver nanowires, wherein the population of silver nanowires exhibit
an average length, L, of ?60 ?m.

US Pat. No. 9,303,207

TEXTURING OF MONOCRYSTALLINE SEMICONDUCTOR SUBSTRATES TO REDUCE INCIDENT LIGHT REFLECTANCE

Rohm and Haas Electronic ...

1. A texturing composition consisting of one or more compounds chosen from hydantoin and hydantoin derivatives, one or more
alkoxylated glycols and one or more alkaline compounds selected from the group consisting of potassium hydroxide, sodium hydroxide,
lithium hydroxide, quaternary ammonium hydroxides, ammonium hydroxide and alkanolamines, and one or more organic solvents
having a flash point of 75° C. or greater, water and optionally one or more oxygen scavengers.

US Pat. No. 9,158,198

PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

Rohm and Haas Electronic ...

11. A photoresist composition, comprising:
a first polymer comprising an acid labile group;
a second polymer comprising:
a first unit formed from a first monomer having the following general formula (I):

wherein: P is a polymerizable functional group; R1 is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons; Z is a spacer unit chosen
from substituted and unsubstituted linear or branched aliphatic and aromatic hydrocarbons, and combinations thereof, optionally
with one or more linking moiety chosen from —O—, —S— and —COO—; and n is an integer from 0 to 5; and

a second unit formed from a second monomer having a basic moiety, wherein the first monomer and the second monomer are different,
and wherein the second monomer comprises a polymerizable group chosen from (alkyl)acrylate, vinyl, allyl and maleimide, and
the basic moiety is chosen from amides;

wherein the second polymer is insoluble in alkaline developer, is free of acid-labile groups, and has a surface energy lower
than a surface energy of the first polymer;

a photoacid generator; and
a solvent.

US Pat. No. 9,110,369

PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A compound having the formula (I):

wherein
each R1 is independently H or a substituted or unsubstituted C1-30 aliphatic group optionally bonded to an adjacent R1,

each R2 and R3 is independently H, F, C1-10 alkyl, C1-10 fluoroalkyl, C3-10 cycloalkyl or C3-10 fluorocycloalkyl, wherein at least one R2 and/or R3 contains F,

L1, L2 and L3 are each independently a single bond, or a C1-20 linking group optionally comprising a lactone group, wherein one or more of L1, L2 and L3 optionally form a ring structure wherein all structures


 form a fused acetal- or ketal-containing ring with the ring structure formed by one or more of L1, L2 and L3, and wherein one or more of L1, L2 and L3 is optionally substituted with a polymerizable C2-20 alpha-beta unsaturated organic group,

X is an ether, ester, carbonate, amine, amide, urea, sulfate, sulfonate, or sulfonamide-containing group,
Z+ is an organic or inorganic cation, and

each a is independently an integer of 1 to 12, b is an integer of 1 to 5, each c is 1, d and r are each independently 0 or
1, and p is an integer of from 0 to 10, and q is an integer of from 1 to 10.

US Pat. No. 9,405,189

SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

ROHM AND HAAS ELECTRONIC ...

8. A method of manufacturing a photoresist composition comprising:
disposing a graft block copolymer, a solvent and a photoacid generator on a substrate; where the graft block copolymer comprises
a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft
polymer comprises a surface energy reducing moiety that comprises a halocarbon moiety or a silicon containing moiety; and
a second block polymer; the second block polymer being covalently bonded to the first block polymer; wherein the second block
polymer comprises the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group
that is operative to undergo deprotection and alter the solubility of the graft block copolymer; where the graft block copolymer
has a bottle brush topology;

baking the graft block copolymer;
exposing the graft block copolymer to radiation; and
contacting the graft block copolymer with an aqueous alkaline developer solution to yield a positive tone patterned image;
or

contacting the graft block copolymer with a solvent developer solution to yield a negative tone patterned image.

US Pat. No. 9,353,443

STABLE CATALYSTS FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) applying a conditioner to the substrate; and then
c) micro-etching the substrate; and then
d) applying an aqueous catalyst solution to the substrate, the aqueous catalyst solution consists of nanoparticles of one
or more metals selected from the group consisting of silver, gold, platinum, palladium, iridium, copper, aluminum, cobalt
and nickel, and one or more stabilizing compounds selected from the group consisting of gallic acid, gallic acid salts, gallic
acid esters, 2,4,6-trihydroxybenzoic acid and mixtures thereof in amounts of 50 ppm to 500 ppm, water, optionally one or more
reducing agents selected from the group consisting of dimethylamine borane, sodium borohydride, ascorbic acid, iso-ascorbic
acid, sodium hypophosphite, hydrazine hydrate, formic acid and formaldehyde, and optionally one or more acids, the aqueous
catalyst solution is free of tin; and

e) electrolessly depositing metal onto the substrate comprising the aqueous catalyst solution using an electroless metal plating
bath.

US Pat. No. 9,223,214

SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

ROHM AND HAAS ELECTRONIC ...

6. A method of manufacturing a photoresist comprising:
mixing a composition comprising:
a copolymer comprising:
a backbone polymer; and
a first graft polymer that comprises a surface energy reducing moiety; the first graft polymer being grafted onto the backbone
polymer; where the surface energy reducing moiety comprises a fluorine atom, a silicon atom, or a combination of a fluorine
atom and a silicon atom;

a photoacid generator; and
a crosslinking agent;
disposing the composition on a substrate;
forming a film on the substrate;
disposing a mask on the film;
exposing the film to electromagnetic radiation to form a crosslinked film that comprises bottle-brushes;
baking the film; and
dissolving unreacted portions of the film.

US Pat. No. 9,364,822

CATALYSTS FOR ELECTROLESS METALLIZATION CONTAINING FIVE-MEMBERED HETEROCYCLIC NITROGEN COMPOUNDS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a catalyst comprising complexes of metal ions and one or more compounds having formula:

wherein R1 may be hydrogen, substituted or unsubstituted, linear or branched (C1-C6)alkyl, hydroxyl, ester or (C1-C4)alkoxy; R2 and R3 may be the same or different and may be hydrogen, substituted or unsubstituted, linear or branched (C1-C4)alkyl, hydroxyl, ester (C1-C4)alkoxy or ureido; and Z is either


 wherein R4 and R5 may be the same or different and may be hydrogen, linear or branched, substituted or unsubstituted (C1-C4)alkyl, hydroxyl or (C1-C4)alkoxy; and R6 may be hydrogen, substituted or unsubstituted, linear or branched (C1-C6)alkyl, hydroxyl, ester or (C1-C4)alkoxy;

b) applying the catalyst to a substrate;
c) applying a reducing agent to the catalyst; and
d) immersing the substrate with the catalyst into a metal plating bath to electrolessly plate metal on the substrate.

US Pat. No. 9,417,525

PHOTORESIST COMPOSITION AND ASSOCIATED METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A photoresist composition comprising:
a first polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating
repeat units; wherein each of the photoacid-generating repeat units comprises an anion, a photoacid-generating cation, and
base-solubility-enhancing functionality; wherein either the anion or the photoacid-generating cation is polymer-bound; wherein
the base-solubility-enhancing functionality is selected from the group consisting of tertiary carboxylic acid esters, secondary
carboxylic acid esters wherein the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof; and wherein each of the photoacid-generating repeat
units independently has the structure


wherein
m is independently in each photoacid-generating repeat unit 0 or 1;
n is independently in each of the repeat units 0 or 1;
q is independently in each photoacid-generating repeat unit 0, 1, 2, 3, 4, or 5;
r is independently at each occurrence in each photoacid-generating repeat unit 0, 1, 2, 3, or 4;
L1 is independently at each occurrence an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2—, or —S(O)2O—, wherein R4 is H or C1-12hydrocarbyl;

L2 is independently at each occurrence —O—, —C(O)—, or —N(R5)—, wherein R5 is H or C1-12 hydrocarbyl;

L3 is independently at each occurrence an unsubstituted or substituted C1-20hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2, or —S(O)2O—, wherein R4 is H or C1-12 hydrocarbyl;

R1 is independently at each occurrence in each photoacid-generating repeat unit halogen, unsubstituted or substituted C1-40 hydrocarbyl, or unsubstituted or substituted C1-40 hydrocarbylene;

R3 is independently at each occurrence H, F, —CN, C1-10 alkyl, or C1-10fluoroalkyl;

X is independently in each photoacid-generating repeat unit a single bond, —O—, —S—, —C(?O)—, —C(R2)2—, —C(R2)(OH)—, —C(?O)O—, —C(=O)N(R2)—, —C(?O)C(?O)—, —S(?O)—, or —S(?O)2—, wherein R2 is independently at each occurrence hydrogen or C1-12 hydrocarbyl; and

a second polymer that exhibits a change in solubility in an alkali developer under the action of acid.
US Pat. No. 9,227,182

PLATING CATALYST AND METHOD

Rohm and Haas Electronic ...

1. A solution comprising a precious metal nanoparticle and polyepoxysuccinic acid or salts thereof.

US Pat. No. 9,200,366

METHOD OF MAKING POLYCRYSTALLINE MONOLITHIC MAGNESIUM ALUMINATE SPINELS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing gaseous precursors of polycrystalline monolithic magnesium aluminate in a chemical vapor deposition chamber,
wherein a source of magnesium is chosen from magnesium halides and a source of aluminum is chosen from aluminum halides, aluminum
carbonyls and aluminum acetonates and a source of oxygen is chosen from O2, CO2, NO2, H2O2, O3, N2O and H2O;

b) reacting the gaseous precursors in the chemical vapor deposition chamber; and
c) chemical vapor depositing polycrystalline monolithic magnesium aluminate on a substrate in the chemical vapor deposition
chamber at a deposition rate of 0.1 ?m/minute to 5 ?m/minute, the temperature of the substrate is 700° C. to 1400° C.

US Pat. No. 9,441,300

STABLE CATALYSTS FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. A method comprising:
a. providing a substrate;
b. applying an aqueous catalyst solution to the substrate, the aqueous catalyst solution comprises one or more reducing agents
and nanoparticles comprising one or more precious metals and one or more flavonoid glycosides and hydrates; and

c. electrolessly depositing metal onto the substrate using an electroless metal plating bath.

US Pat. No. 9,411,228

PHOTORESIST COMPOSITION AND ASSOCIATED METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A photoresist composition comprising:
a first polymer comprising 60 to 100 mole percent of photoacid-generating repeat units, wherein each of the photoacid-generating
repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing functionality selected from
the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein the secondary carbon is
substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof; and

a second polymer that exhibits a change in solubility in an alkali developer under the action of acid
wherein the photoacid-generating repeat units of the first polymer have the structure
wherein
R1 is independently in each of the repeat units H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

L1 is independently in each of the repeat units —O—, —C(O)—O—, unsubstituted C6-18 arylene, or substituted C6-18 arylene;

m is 1;
L2 is independently in each of the repeat units an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, include one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR2, —PR2—, —C(O)—, —OC(O)O—, —N(R2)C(O)—, —C(O)N(R2)—, —OC(O)N(R2)—, —N(R2)C(O)O—, —S(O)—, —S(O)2—, —N(R2)S(O)2—, —S(O)2N(R2)—, —OS(O)2—, or —S(O)2O—, wherein R2 is H or C1-12 hydrocarbyl;

Z? is independently in each of the repeat units sulfonate (—SO3?), sulfonamidate (anion of sulfonamide; —S(O)2N?R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl), or sulfonimidate (anion of sulfonimide; —S(O)2N?S(O)2R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl);

Q+ is photoacid-generating cation; and

at least one of L1, L2 (when m is 1), and Q+ comprises the base-solubility-enhancing functionality.

US Pat. No. 9,150,976

ELECTROLYTIC COPPER PLATING LIQUID AND THE ELECTROLYTIC COPPER PLATING METHOD

Rohm and Haas Electronic ...

1. A copper electroplating liquid comprising a source of copper ions chosen from copper sulfate, copper cyanide or copper
pyrophosphate; N,N?-bis(hydroxyl methyl)urea; and compounds selected from the group consisting of:
M-SO3—(CH2)a—S—(CH2)b—SO3-M;  (1)

M-SO3—(CH2)a—O—CH2—S—CH2—O—(CH2)b—SO3-M;  (2)

M-SO3—(CH2)a—S—S—(CH2)b—SO3-M;  (3)

M-SO3—(CH2)a—O—CH2—S—S—CH2—O—(CH2)b—SO3-M;  (4)

M-SO3—(CH2)a—S—C(?S)—S—(CH2)b—SO3-M; and  (5)

M-SO3—(CH2)a—O—CH2—S—C(?S)—S—CH2—O—(CH2)b—SO3-M,  (6)

wherein a and b in compounds (1)-(6) are integers from 3 to 8, M is hydrogen or an alkali metal element.

US Pat. No. 9,212,293

PHOTORESIST OVERCOAT COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES

Rohm and Haas Electronic ...

1. A photoresist overcoat composition, comprising:
a first polymer comprising as polymerized units a monomer of the following general formula (I):

wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from substituted and unsubstituted C1 to C15 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen
from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking
moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; wherein the first polymer is free of fluorine;

a second polymer comprising as polymerized units a monomer of the general formula (I);
an organic solvent; and
a basic quencher.
US Pat. No. 9,156,785

BASE REACTIVE PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

1. A photoacid generator compound of formula (I)
R5M+R6R7r?O3S—R1p—Xy—(R2ZwR3)x  (I)
wherein each R1 is chosen from (C1-C10)alkyl, heteroatom-containing (C1-C10)alkyl, fluoro(C1-C10)alkyl, heteroatom-containing fluoro (C1-C10)alkyl, (C6-C10)aryl, and fluoro(C6-C10)aryl; each R2 is a chemical bond or a (C1-C30)hydrocarbyl group; each R3 is H or a (C1-C30)hydrocarbyl group; R5, R6 and R7 independently are chosen from an optionally substituted carbocylic aryl group, an allyl group, and an optionally substituted
(C1-C20)alkyl group; X is a chemical bond or a divalent linking group; Z is chosen from an acetoacetoxy ester, —C(O)—O—C(O)—R1—, —C(CF3)2—, —COO—Rf—, —SO3—Rf—, —OCH3-z(CH2OC(?O)—Rf—)z, and a (C5-C30)cyclohydrocarbyl group comprising a base-reactive group chosen from fluoroalkyl esters, fluorosulfonate esters, and —C(CF3)2O—; each Rf is independently a fluoro(C1-C10)alkyl; p=0-6; w=1-3; x=1-4; y=0-5; z=1-2; r=0-1; M is S or I; wherein when M=I, r=0, and when M=S, r=1.
US Pat. No. 9,404,193

REACTION PRODUCTS OF GUANIDINE COMPOUNDS OR SALTS THEREOF, POLYEPOXIDES AND POLYHALOGENS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) providing a composition comprising one or more sources of metal ions, and one or more compounds comprising a reaction product
of one or more guanidine compounds or salts thereof, one or more polyepoxide compounds and one or more polyhalogen compounds,
wherein the one or more polyhalogens have a formula:

X1—R16—X2  (VII)
wherein X1 and X2 may be the same or different and are halogens chosen from chlorine, bromine, fluorine and iodine; R16 is a moiety having formula:
—CH2—R17—CH2—  (VIII)
wherein R17 is a linear or branched, substituted or unsubstituted (C1-C18)alkyl, substituted or unsubstituted (C6-C12)cycloalkyl, substituted or unsubstituted (C.sub.6-C15)aryl, —CH2—O—(R18—O)q—CH2— where R18 is a substituted or unsubstituted, linear or branched (C2-C10)alkyl and q is an integer of 1-10;
c) contacting a substrate with the composition;
d) applying a current to the substrate and the composition; and
e) depositing a metal on the substrate.

US Pat. No. 9,269,623

EPHEMERAL BONDING

Rohm and Haas Electronic ...

1. A method of releasably attaching a semiconductor wafer to a carrier substrate comprising:
(a) providing a semiconductor wafer having a front side and a back side;
(b) providing a carrier substrate having an attachment surface;
(c) disposing a temporary bonding composition comprising a curable adhesive material and a release additive between the front
side of the semiconductor wafer and the attachment surface of the carrier substrate;

(d) curing the adhesive material to provide a temporary bonding layer disposed between the front side of the semiconductor
wafer and the attachment surface of the carrier substrate; wherein the temporary bonding layer adjacent to the attachment
surface of the carrier substrate comprises a relatively lower amount of the release additive and the temporary bonding layer
adjacent to the front side of the semiconductor wafer comprises a relatively higher amount of the release additive; wherein
the release additive is a polyether compound; and wherein the release additive is free of silicon;

(e) performing an operation on the back side of the semiconductor wafer; and
(f) separating the front side of the semiconductor wafer from the temporary bonding layer.

US Pat. No. 9,324,604

GAP-FILL METHODS

Rohm and Haas Electronic ...

1. A gap-fill method, comprising:
(a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a
plurality of gaps to be filled, wherein the gaps have a width of 50 nm or less;

(b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a first polymer comprising
a crosslinkable group, a second polymer comprising a chromophore, wherein the first polymer and the second polymer are different,
a crosslinker, an acid catalyst, and a solvent, wherein the gap-fill composition is disposed in the gaps;

(c) heating the gap-fill composition at a temperature to cause the first polymer to self-crosslink and/or to crosslink with
the second polymer to form a crosslinked polymer;

(d) forming a photoresist layer over the substrate comprising the crosslinked polymer-filled gaps;
(e) patternwise exposing the photoresist layer to activating radiation; and
(f) developing the photoresist layer to form a photoresist pattern.

US Pat. No. 9,918,389

ELECTROLESS METALLIZATION OF DIELECTRICS WITH ALKALINE STABLE PYRAZINE DERIVATIVE CONTAINING CATALYSTS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate comprising a dielectric, wherein the dielectric is chosen from one or more of fiberglass, epoxy resin,
acrylonitrile butadienestyrene, polyphenylene ethers, polyphenylene sulfides, polysulfones and polytetrafluoroethylene;

b) applying an aqueous alkaline catalyst solution to the substrate comprising the dielectric, the aqueous alkaline catalyst
comprises a monomeric complex of palladium ions and one or more pyrazine derivatives having formula:


wherein R1, R2, R3 and R4 may be the same or different and are hydrogen, linear or branched (C1-C5)alky, —N(R)2, linear or branched amino(C1-C5)alkyl, acetyl, linear or branched hydroxy(C1-C5)alkyl, or linear or branched (C1-C5)alkoxy, and where R may be the same or different and is linear or branched (C1-C5)alkyl, and with the proviso that at least one of R1, R2, R3 and R4 is other than hydrogen, wherein the aqueous alkaline catalyst is free of tin;

c) applying a reducing agent to the substrate comprising the dielectric and the aqueous alkaline catalyst comprising the monomeric
complex and the palladium ions to reduce the palladium ions to their metallic state prior to metallization of the substrate;
and

d) immersing the substrate comprising the dielectric and palladium metal into an alkaline metal plating bath to electrolessly
plate metal on the substrate comprising the dielectric.

US Pat. No. 9,063,420

PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A photoresist composition comprising:
a polymer comprising a plurality of repeat units having the structure
wherein each occurrence of R1 and R2 is independently hydrogen, unsubstituted or substituted C1-18 linear or branched alkyl, unsubstituted or substituted C3-18 cycloalkyl, unsubstituted or substituted C6-18 aryl, or unsubstituted or substituted C3-18 heteroaryl; and R1 and R2 are optionally covalently linked to each other to form a ring that includes —R1—C—R2—; each occurrence of Ar1, Ar2, and Ar3 is independently an unsubstituted or substituted C6-18 arylene, or unsubstituted or substituted C3-18 heteroarylene; wherein at least one occurrence of R1, R2, Ar1, Ar2, and Ar3 is substitured with at least one functional group selected from hydroxyl, acetal, ketal, ester, and lactone; and
a photoactive component selected from photoacid generators, photobase generators, photoinitiators, and combinations thereof.

US Pat. No. 9,416,452

VAPOR DELIVERY DEVICE, METHODS OF MANUFACTURE AND METHODS OF USE THEREOF

ROHM AND HAAS ELECTRONIC ...

1. A delivery system comprising:
a delivery device having an inlet port and an outlet port;
a first proportional valve; wherein the delivery device is in operative communication with the first proportional valve; wherein
the first proportional valve is operative to control the flow of a carrier gas based on an applied voltage; where the first
proportional valve is in fluid communication with a first stream that contacts the delivery device;

a second proportional valve in fluid communication with a second stream that bypasses the delivery device and contacts the
first stream at a point downstream of the delivery device; where both the first stream and the second stream emanate from
a single stream;
a mixing chamber; the mixing chamber being downstream of the delivery device and being operative to mix the first stream with
the second stream;
a chemical sensor; the chemical sensor being disposed downstream of the delivery device and being operative to analyze chemical
contents of a fluid stream emanating from the delivery device; the chemical sensor being in communication with the first proportional
valve;

a first pressure/flow controller being in operative communication with the chemical sensor and with the first proportional
valve; wherein the delivery system is operative to deliver a substantially constant number of moles of a precursor vapor per
unit volume of the carrier gas to a plurality of reactors that are communication with the delivery system; where the chemical
sensor is disposed downstream of the delivery device and downstream of the point where the first stream and the second stream
contact each other;

a pressure sensor; the pressure sensor being disposed downstream of the delivery device; and
a second pressure/flow controller being in operative communication with the pressure sensor; where the second pressure/flow
controller is in electrical communication with the second proportional valve.

US Pat. No. 9,149,798

PLATING CATALYST AND METHOD

Rohm and Haas Electronic ...

1. A solution comprising a precious metal nanoparticle and a polymer, the polymer comprises a carboxyl group and a nitrogen
atom within a repeating unit of the polymer and a mole ratio of the precious metal nanoparticle to the carboxyl group of the
polymer is 1:0.1 to 1:10.

US Pat. No. 9,206,520

INHIBITING BACKGROUND PLATING

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a doped semiconductor comprising an n doped front side and a p doped back side, and a dielectric layer covering
the n doped front side of the doped semiconductor;

b) selectively depositing a phase change resist having a light transmission of 30% or greater onto the dielectric layer to
form a pattern on the dielectric layer;

c) etching away sections of the dielectric layer not covered with the phase change resist to expose sections of the n doped
front side of the doped semiconductor;

d) depositing a metal seed layer on the exposed sections of the n doped front side of the doped semiconductor; and
e) depositing a metal layer on the metal seed layer by light induced plating.

US Pat. No. 10,104,782

METHOD OF ELECTROPLATING PHOTORESIST DEFINED FEATURES FROM COPPER ELECTROPLATING BATHS CONTAINING REACTION PRODUCTS OF PYRIDYL ALKYLAMINES AND BISEPOXIDES

Dow Global Technologies L...

1. A method for electroplating photoresist defined features comprising:a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures;
b) providing a copper electroplating bath comprising a source of copper ions, one or more reaction products of one or more pyridyl alkylamines and one or more bisepoxides; an electrolyte; one or more accelerators; and one or more suppressors;
c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and
d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average % TIR of ?5% to +12%.

US Pat. No. 9,394,411

METHODS FOR ANNEALING BLOCK COPOLYMERS AND ARTICLES MANUFACTURED THEREFROM

DOW GLOBAL TECHNOLOGIES L...

1. A block copolymer comprising:
a first block derived from a vinyl aromatic monomer; where the vinyl aromatic monomer has at least one alkyl substitution
on an aromatic ring;

a second block derived from a siloxane monomer; where a chi parameter that measures interactions between the first block and
the second block is 0.03 to 0.18 at a temperature of 200° C.

US Pat. No. 9,296,879

HARDMASK

Rohm and Haas Electronic ...

10. A composition comprising: an organometallic compound of the formula
wherein R2=(C1-C20)hydrocarbyl; M1 is a Group 3 to Group 14 metal; G=R3b-Ch-R3b or Ch(OM1L1mOR2)c; Ch=a chromophore moiety; R3 is a divalent linking group having from 1 to 12 carbon atoms; R4=H, R2 or M(L1)mOR2; L1 is a ligand; m refers to the number of ligands and is an integer from 1-4; a=an integer from 1 to 20; each b is independently
an integer from 0 to 25; c=1 or 2; and an organic solvent; wherein the chromophore moiety is an isocyanurate.
US Pat. No. 9,212,429

GOLD PLATING SOLUTION

Rohm and Haas Electronic ...

1. A gold cobalt alloy plating solution consisting of a gold cyanide or salt thereof, a cobalt compound, a conductive salt,
water, a reaction product of a compound containing a nitrogen-containing heterocyclic compound, an epihalohydrin and an alkylene
oxide, and optionally additives chosen from a chelating agent, and a pH adjusting agent.

US Pat. No. 9,144,794

STABLE CATALYST FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. An aqueous catalyst solution comprising one or more antioxidants chosen from ascorbic acid, phenolic acid and polyphenolic
compounds, nanoparticles of metal selected from the group consisting of silver and gold, and one or more compounds chosen
from polymers having a formula:

wherein R1, R2, R3, R4, R5, R6 and R7 are the same or different and chosen from —H, —CH3, —CH2CH3, —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3, —(CH2CHR8O)y—H, —CH2COOX, —C(O)—CH3, —C(O)—(CH2)z—CH3 and


wherein R8 is —H or —CH3, n is an integer of at least 2, x, y and z are integers of at least 1 and X is —H or a counter cation, and a reaction product
of a polymer having a formula:


wherein R9, R10, R11, R12, R13, R14, and R15 are the same or different and are chosen from —H, —CH3, —CH2CH3, —CH2OH, —[CH2CHR8]x—OH, —CH2CH(OH)CH3 and —(CH2CHR8O)y—H, with the proviso that at least one of R9, R10, R11, R12, R13, R14, and R15 is —CH2OH, —[CH2CHR8],x—OH, —CH2CH(OH)CH3 or —(CH2CHR8O)y—H, wherein R8, n, x, y and z are as described above, and a quaternary compound having a formula:


wherein m is an integer from 1 to 16, Y is halogen, Z? is a counter anion, R16, R17 and R18 are the same or different and are —H, —CH3 or —(CH2)p—CH3, and R19 is —H or —CH3 and p is an integer of 1 to 9, and one or more cross-linking agents; and the catalyst is free of tin.

US Pat. No. 9,601,325

AROMATIC RESINS FOR UNDERLAYERS

Rohm and Haas Electronic ...

10. A composition comprising a polymer chosen from

wherein x and y represent the number of each repeat units and are integers independently selected from 1 to 499, and wherein
x+y=2 to 500; and a organic solvent.

US Pat. No. 9,507,260

COMPOSITIONS AND PROCESSES FOR PHOTOLITHOGRAPHY

Rohm and Haas Electronic ...

2. A method for processing a photoresist composition, comprising;
(a) applying on a substrate a layer of a photoresist composition, the photoresist composition comprising:
(i) one or more resins that comprise photoacid-labile groups;
(ii) a photoactive component, and
(iii) one or more materials that (i) comprise photoacid-labile groups, (ii) are distinct from the one or more resins, and
(iii) are substantially non-mixable with the one or more resins;

wherein the deprotection activation energy of the photoacid-labile groups of the (iii) one or more materials is lower than
the deprotection activation energy of the photoacid-labile groups of the one or more resins; and

(b) immersion exposing the photoresist composition layer to radiation activating for the photoresist composition,
wherein the (iii) one or more materials comprises a resin of the following structure:

US Pat. No. 9,499,912

COPOLYMERS OF DIGLYCIDYL ETHER TERMINATED POLYSILOXANE COMPOUNDS AND NON-AROMATIC POLYAMINES

Rohm and Haas Electronic ...

1. A composition comprising a reaction product of one or more diglycidyl ether terminated polysiloxane compounds and one or
more non-aromatic polyamines chosen from aliphatic polyamines having a formula:

wherein R7, R8 and R9 are independently chosen from hydrogen; linear or branched, substituted or unsubstituted (C1-C10)alkylamine; linear or branched, substituted or unsubstituted (C1-C10)alkyl; a moiety having a general formula:


wherein R10 to R15 are independently chosen from hydrogen; linear or branched, substituted or unsubstituted (C1-C10)alkyl; linear or branched, substituted or unsubstituted, (C1-C10)alkylamine; and with the proviso that if the nitrogen atoms in compound II is tertiary, at least one of R7, R8 and R9 comprises substituent groups with two or more primary nitrogen atoms; and q, r and t may be the same or different and are
integers of 1 to 10; and acetonitrile.

US Pat. No. 9,297,087

ACIDIC GOLD ALLOY PLATING SOLUTION

Rohm and Haas Electronic ...

1. A method of manufacturing a connector formed with a gold alloy plating film, comprising:
performing nickel plating on a contact region of the connector to deposit a nickel film on the contact region; and performing
gold alloy plating on the nickel film; wherein the gold alloy plating is electrolytic plating at a current density of 10 A/dm2 to 70 A/dm2 and using an acidic gold alloy plating solution consisting of gold cyanide or salt thereof, cobalt ions, one or more acids
or salts thereof selected from the group consisting of aminotrimethylene phosphonic acid, 1-hydroxyethyl-idene-1,1-diphosphonic
acid, ethylenediamine tetramethylene phosphonic acid, diethylene-triamine pentamethylene phosphonic acid, phosphoric acid,
sulfurous acid, amino acids and carboxylic acids wherein the carboxylic acids are selected from the group consisting of citric
acid, tartaric acid, oxalic acid, succinic acid, adipic acid, malic acid, lactic acid, pyridine carboxylic acids, thiocarboxylic
acids and benzoic acid, between 0.05 g/L and 10 g/L of hexamethylene tetramine, and a nitrogen atom containing compound selected
from the group consisting of alkanolamines, dialkanolamines and trialkanolamines and a pH of between 3 and 6 and water and
optionally antifungal agents and optionally surfactants.

US Pat. No. 9,206,276

PHOTOSENSITIVE COPOLYMER, PHOTORESIST COMPRISING THE COPOLYMER, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A copolymer comprising the polymerized product of:
an acid-deprotectable monomer having the formula (I) and a comonomer:
wherein
c is 1, 2, 3, 4, or 5;
Ra is H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

Rx is an unsubstituted or substituted C1-10 linear or branched alkyl group, an unsubstituted or substituted C3-10 cycloalkyl group, an unsubstituted or substituted C3-10 alkenylalkyl group, or an unsubstituted or substituted C3-10 alkynylalkyl group;

Ry is fluorine-substituted C3-6 linear alkyl, unsubstituted C3-6 alkenylalkyl, or unsubstituted C3-10 alkynylalkyl group; and

Rz is a C6-20 aryl group substituted with an acetal-containing group or a ketal-containing group, or a C3-C20 heteroaryl group substituted with an acetal-containing group or a ketal-containing group, wherein the C6-20 aryl group or the C3-C20 heteroaryl group can, optionally, be further substituted.

US Pat. No. 9,558,987

GAP-FILL METHODS

Dow Global Technologies L...

1. A gap-fill method, comprising:
(a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a
plurality of gaps to be filled;

(b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable
polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following
general formula (I):

wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula
(II):
wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently
chosen from hydroxyl, carboxyl, thiol, amine, amide and vinyl groups; and
(c) heating the gap-fill composition at a temperature to cause the polymer to crosslink.

US Pat. No. 9,076,657

ELECTROCHEMICAL ETCHING OF SEMICONDUCTORS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a semiconductor wafer comprising a front side comprising an emitter layer comprising oxidized sections, a back
side and a PN junction;

b) contacting the semiconductor wafer with a composition consisting of alkali metal bifluorides, sulfamic acid and water;
c) generating a current in the composition;
d) applying anodic current for a predetermined time, followed by turning the anodic current off for a predetermined time and
repeating the cycle to form a nanoporous layer on the oxidized sections of the emitter layer of the semiconductor wafer, wherein
a sheet resistivity of the emitter layer is increased by 5% to 40% of the sheet resistivity of the emitter layer prior to
application of the anodic current;

e) contacting the semiconductor wafer with a metal plating solution; and
f) generating an electrical current in the metal plating solution to deposit metal on the nanoporous emitter layer.
US Pat. No. 9,499,910

PROCESS FOR ELECTROLESS PLATING AND A SOLUTION USED FOR THE SAME

Rohm and Haas Electronic ...

1. A process for selective metallization, comprising the steps of:
(a) preparing a surface of a non-conductive material by chemically or physically modifying the surface within areas to be
plated;

(b) contacting the non-conductive material with a pretreatment solution comprising a conditioning agent selected from the
group consisting of polyoxyethylene alkyl phenol phosphate, polyether phosphate and phenol sulfonic acid, wherein the polyoxyethylene
alky phenol phosphate is in amounts of 2.5 to 15 g/L, the polyether phosphate is in amounts of 2.5 to 15 g/L and the phenol
sulfonic acid is in amounts of 2.5 to 25 g/L and 10 to 90 g/L of an alkali metal hydroxide;

(c) contacting the non-conductive material with a catalyst solution comprising a catalytic palladium metal ion in amounts
of 5 to 25 ppm, 50 to 150 g/L sulfuric acid and chloride ion;

and
(d) electrolessly plating those areas to be plated on the surface of the non-conductive material.
US Pat. No. 9,442,377

WET-STRIPPABLE SILICON-CONTAINING ANTIREFLECTANT

Rohm and Haas Electronic ...

1. The present invention provides a siloxane polymer comprising as polymerized units one or more first monomers of formula
(1) or dimers thereof and one or more second monomers of formula (2) or dimers thereof
R2SiX2  (1)

RSiX3  (2)

wherein each R is independently chosen from aryl, aralkyl, alkyl, alkenyl, aralkenyl, and R1; R1 is a C2-30 organic radial comprising one or more —C(O)—O—C(O)— moieties; and each X is a hydrolyzable moiety; wherein at least one R
is R1; and wherein ?30% of the monomers comprising the polymer comprise one or more functional moieties chosen from hydroxy, mercapto,
epoxy, glycidyloxy, cyano, alkyleneoxy, sulfolanyl, and —C(O)—O—C(O)—; and wherein the polymer is free of monomers of the
formula HSiX3 and SiX4 as polymerized units.

US Pat. No. 9,209,035

PHOTORESIST PATTERN TRIMMING METHODS

Rohm and Haas Electronic ...

1. A method of trimming a photoresist pattern, comprising, in sequence:
(a) providing a semiconductor substrate comprising one or more layers to be patterned on an upper surface thereof;
(b) forming a photoresist pattern on the one or more layers to be patterned, wherein the photoresist pattern comprises a plurality
of features and is formed from a chemically amplified photoresist composition, the photoresist pattern comprising a matrix
polymer having acid labile groups;

(c) coating a photoresist trimming composition over the photoresist pattern, wherein the trimming composition comprises a
matrix polymer, a thermal acid generator and a solvent, and wherein the trimming composition is free of cross-linking agents;

(d) heating the coated semiconductor substrate to generate an acid in the trimming composition from the thermal acid generator,
thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and

(e) contacting the photoresist pattern with a developing solution to remove the surface region of the photoresist pattern.

US Pat. No. 9,114,594

HIGH TEMPERATURE RESISTANT SILVER COATED SUBSTRATES

Rohm and Haas Electronic ...

1. An article comprising a substrate comprising copper or copper alloy adjacent to the substrate, a nickel layer adjacent
the copper or copper alloy adjacent to the substrate, a tin layer adjacent the nickel layer and a silver layer adjacent the
tin layer, the silver layer thickness to the tin layer thickness is 5:1 to 25:1.

US Pat. No. 9,540,476

AROMATIC RESINS FOR UNDERLAYERS

Rohm and Haas Electronic ...

1. A reaction product formed from a combination comprising one or more first monomers of the formula
wherein Y is selected from H, C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —C1-C30alkylene-OR1, and —C1-C30alkylidene-OR1; each R is independently selected from C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —OR1, —C1-C30alkylene-OR1, and —C1-C30alkylidene-OR1; R1 is selected from H, C1-C30alkyl, C6-C30aryl, substituted C6-C30aryl, and C7-C30aralkyl; and n is an integer selected from 0 to 7; and one or more second monomers of the formula Ar—CHO, where Ar is a C10-C30aromatic moiety having at least 2 fused aromatic rings, which may optionally be substituted with one or more of C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —OR3, —C1-C30alkylene-OR3 and —C1-C30alkylidene-OR3; R3 is selected from H, C1-C30alkyl, and C6-C30aryl.

US Pat. No. 9,478,713

NANOSTRUCTURE MATERIAL METHODS AND DEVICES

Rohm and Haas Electronic ...

1. A structure comprising:
a substrate having a first surface and a second surface; and
a polymeric layer disposed on the first surface of the substrate, the polymeric layer comprising a polymer and a plurality
of light-emitting nanocrystals;

the polymeric layer having a patterned surface, the patterned surface having a patterned first region having a first plurality
of recesses and a patterned second region having a second plurality of recesses, wherein the plurality of recesses in each
region has a first periodicity in a first direction, and a second periodicity in a second direction which intersects the first
direction, wherein the first periodicity of the first region is different from the first periodicity of the second region.

US Pat. No. 9,410,238

METHOD OF MAKING DURABLE ARTICLES

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate comprising zinc sulfide or zinc selenide on a sputtering drum in a sputtering drum coating chamber;
b) providing a source of alumina, a source of diatomic oxygen and a source of inert gas in the sputtering drum coating chamber,
wherein a target distance of the source of alumina to the zinc sulfide or the zinc selenide ranges from 8 cm to 20 cm;

c) rotating the substrate comprising the zinc sulfide or the zinc selenide on the sputtering drum at 0.75 to 3 revolutions
per second;

d) introducing diatomic oxygen in the sputtering drum coating chamber at a flow rate of 20 sccm to 80 sccm and introducing
inert gas in the sputtering drum coating chamber at a flow rate of 30 sccm to 150 sccm at a total sputtering drum coating
chamber pressure of 2×10?3 Torr to 7×10?3 Torr;

e) ionizing the diatomic oxygen and inert gas with microwaves at microwave powers of 1 kW to 5 kW and at a frequency of 1
GHz to 5 GHz; and

f) depositing a layer of alumina 30 ?m to 60 ?m thick by pulsed DC magnetron sputtering or 30 ?m to 100 ?m thick by AC magnetron
sputtering on the zinc sulfide or zinc selenide at a deposition rate of 60 Å/minute to 270 Å/minute at pulsed power ranges
of 3 kW to 9 kW and frequency ranges of 20 kHz to 50 kHz, wherein the zinc sulfide or zinc selenide are maintained at temperatures
of 40° C. to 200° C.

US Pat. No. 9,518,324

COPOLYMERS OF DIGLYCIDYL ETHER TERMINATED POLYSILOXANE COMPOUNDS AND NON-AROMATIC POLYAMINES

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate comprising a dielectric;
b) contacting the substrate with a composition comprising a reaction product of one or more diglycidyl ether terminated polysiloxane
compounds and one or more non-aromatic polyamines;

c) applying a catalyst to the substrate and
d) electrolessly plating metal on the substrate with an electroless metal plating bath.
US Pat. No. 9,499,513

ACID GENERATORS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

1. A method for providing a photoresist relief image, comprising:
a) applying a coating layer of a photoresist composition on a substrate, the photoresist composition comprising:
(a) a polymer; and
(b) an acid generator selected from the group consisting of:
(i) 5-(4-(2-(1-ethylcyclopentyloxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;
(ii) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 3-hydroxyadamantane-acetoxy-1,1,2,2-tetrafluorobutane-1-sulfonate;
(iii) 5-(4-(2-(1-ethylcyclopentyl oxy)-2-oxoethoxy)-3,5-dimethylphenyl)-5H-dibenzo[b,d]thiophenium 4-((4R)-4-((8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17-yl)pentanoyloxy)-1,1,2,2-tetrafluorobutane-1-sulfonate;
and

(iv) 5-(3,5-dimethyl-4-(2-oxo-2-(2-phenylpropan-2-yloxy)ethoxy)phenyl)-5H-dibenzo[b,d]thiophenium 44(4R)-44(8R,9S,10S,13R,14S,17R)-10,13-dimethyl-3,7,12-trioxohexadecahydro-1H-cyclopenta[a]phenanthren-17-ylipentanoyloxy)-1,
1,2,2-tetrafluorobutane-1-sulfonate; and

b) exposing the photoresist composition layer to activating radiation and developing the exposed photoresist composition coating
layer.

US Pat. No. 9,696,622

COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY

Rohm and Haas Electronic ...

24. An immersion lithography system comprising:
(a) a substrate having thereon:
a coating layer of a photoresist composition, the photoresist composition comprising in admixture:
(i) one or more resins,
(ii) a photoactive component, and
(iii) one or more resins that are substantially non-mixable with the one or more resins, and/or comprise 1) Si substitution,
2) fluorine substitution, 3) hyperbranched polymers; and/or 4) polymeric particles; and

(b) an immersion lithography apparatus.
US Pat. No. 9,562,300

SULFONAMIDE BASED POLYMERS FOR COPPER ELECTROPLATING

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) providing a composition comprising one or more sources of copper ions, optionally one or more sources of tin ions, an electrolyte
and a reaction product comprising: one or more sulfonamides or salts thereof, and one or more epoxides;

c) contacting a substrate with the composition;
d) applying a current to the substrate and the composition; and
e) depositing a copper or copper/tin alloy on the substrate.

US Pat. No. 9,455,177

CONTACT HOLE FORMATION METHODS

Dow Global Technologies L...

1. A contact hole formation method, comprising:
(a) providing a substrate comprising a plurality of post patterns over a layer to be patterned;
(b) forming a hardmask layer over the post patterns and the layer to be patterned;
(c) coating a pattern treatment composition over the hardmask layer, wherein the pattern treatment composition comprises a
polymer comprising a reactive surface attachment group and a solvent; and optionally baking the substrate;

wherein the polymer becomes bonded to the hardmask layer to form a polymer layer over the hardmask layer; and
(d) treating the substrate with a rinsing agent comprising a solvent to remove residual, unbound said polymer, thereby forming
a first hole disposed between a plurality of surrounding post patterns;

wherein the method is free of exposing the polymer to activating radiation from coating the pattern treatment composition
to treating the substrate with the solvent.

US Pat. No. 9,439,294

REACTION PRODUCTS OF HETEROCYCLIC NITROGEN COMPOUNDS POLYEPOXIDES AND POLYHALOGENS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) providing a composition comprising one or more sources of metal ions, an electrolyte and one or more compounds comprising
a reaction product of one or more heterocyclic nitrogen compounds comprising at least two reactive nitrogen atoms with the
proviso that at least one of the reactive nitrogen atoms is in the ring of the one or more heterocyclic nitrogen compounds;
one or more polyepoxide compounds and one or more polyhalogen compounds;

c) contacting the substrate with the composition;
d) applying a current to the substrate and the composition; and
e) depositing a metal on the substrate.
US Pat. No. 9,840,637

COPOLYMER FORMULATION FOR DIRECTED SELF-ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

DOW GLOBAL TECHNOLOGIES L...

1. A composition comprising:
a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the
second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure;

an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises
a polymer that is chemically and structurally the same as one of the polymers in the block copolymer or where the bottlebrush
polymer comprises a polymer that has a preferential interaction with one of the blocks of the block copolymers; and

a solvent.
US Pat. No. 9,506,150

METALLIZATION INHIBITORS FOR PLASTISOL COATED PLATING TOOLS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a plating tool comprising plastisol;
b) applying a composition comprising one or more surfactants having an HLB of 5 to 15 and a sulfur compound containing a sulfur
atom in an oxidation state equal to ?1 or ?2 or a mixture of sulfur compounds having sulfur atoms with oxidation states of
?1 and ?2 to the plastisol;

c) fastening a substrate comprising one or more polymers to the plating tool;
d) etching the one or more polymers with a chromium (VI) free etch composition or a low chromic acid etch composition;
e) applying a catalyst to the one or more polymers; and
f) electroless plating a metal on the one or more polymers.

US Pat. No. 9,493,686

EPHEMERAL BONDING

Rohm and Haas Electronic ...

1. A structure comprising: a semiconductor wafer having a front side and a back side; a carrier substrate having an attachment
surface; and a temporary bonding layer disposed between the front side of the semiconductor wafer and the attachment surface
of the carrier substrate; wherein the temporary bonding layer comprises a cured adhesive material and a polyether release
additive, the release additive being free of silicon; wherein the temporary bonding layer is composed of a first region adjacent
to the attachment surface of the carrier substrate having a relatively lower amount of release additive and a second region
adjacent to the front side of the semiconductor wafer having a relatively greater amount of release additive.

US Pat. No. 9,488,910

SULFONYL PHOTOACID GENERATORS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

1. A photoresist composition comprising a resin and a photoacid generator compound of the following Formula II:

wherein W, Y are each independently hydrogen, fluorine, optionally substituted fluoroalkyl; optionally substituted fluoroalkoxy;
or optionally substituted fluorocarbocyclic aryl;

W?, Y? are each independently the same as defined for W and Y;
n and n? are each the same or different and are each a positive integer;
U and U? are each the same or different and are each a linker; and
R and R? are each the same or different and are each an optionally substituted carboalicyclic, optionally substituted heteroalicyclic,
optionally substituted carbocyclic aryl, or optionally substituted heteroaromatic group;

X+ is a counter ion.

US Pat. No. 9,448,486

PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS

Rohm and Haas Electronic ...

1. A photoresist pattern trimming composition, comprising:
a matrix polymer comprising a unit formed from a monomer of the following general formula (I):

wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; R2 is chosen from C1-C15 alkylene; and R3 is chosen from C1-C3 fluoroalkyl;

an aromatic acid that is free of fluorine; and
a solvent.
US Pat. No. 9,063,425

TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS

Rohm and Haas Electronic ...

1. A method of forming a photolithographic pattern, comprising:
(a) applying a photoresist layer over a substrate;
(b) applying over the photoresist composition layer a layer of a topcoat composition, wherein the topcoat composition comprises:
a polymer system comprising a matrix polymer and a surface active polymer, wherein the surface active polymer comprises one
or more acid-labile groups, wherein the matrix polymer is present in the composition in a larger proportion by weight than
the surface active polymer, and wherein the surface active polymer has a lower surface energy than a surface energy of the
matrix polymer, and wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from
80.2 to 85° ; and

a solvent system comprising a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second
organic solvent,

wherein the first organic solvent has a higher surface energy than a surface energy of the surface active polymer; and
wherein the first organic solvent has a higher boiling point than a boiling point of the second organic solvent;
(c) exposing the photoresist layer to actinic radiation; and
(d) contacting the exposed photoresist layer with a developer to form a photoresist pattern.

US Pat. No. 10,154,598

FILLING THROUGH-HOLES

Rohm and Haas Electronic ...

1. A method comprising:a) providing a printed circuit board with a plurality of through-holes comprising a layer of electroless copper, copper flash or combinations thereof on a surface of the printed circuit board and walls of the plurality of through-holes;
b) immersing the printed circuit board in a copper electroplating bath comprising an anode; and
c) filling the through-holes with copper by a pulse plating cycle consisting of: applying a forward current density for 10 ms to 200 ms followed by interrupting the forward current density for 1 ms to 2 ms and applying a second forward current density for 10 ms to 200 ms and interrupting the second forward current density for 1 ms to 2 ms; applying a forward current density for 20 ms to 100 ms followed by interrupting the forward current density for 1 ms to 2 ms and applying a second forward current density for 20 ms to 100 ms and interrupting the second forward current density for 1 ms to 2 ms; and applying a forward current density for 0.5 ms to 5 ms followed by interrupting the forward current density for 1 ms to 2 ms and applying a second forward current density for 0.5 ms to 5 ms and interrupting the second forward current density for 1 ms to 2 ms; and optionally repeating the pulse plating cycle, wherein a pulse of the pulse plating cycle is never anodic.

US Pat. No. 9,753,370

MULTIPLE-PATTERN FORMING METHODS

Dow Global Technologies L...

1. A multiple-pattern forming method, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from
a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent;

(c) patternwise exposing the photoresist layer to activating radiation;
(d) baking the exposed photoresist layer;
(e) contacting the baked photoresist layer with a first developer to form a first resist pattern;
(f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall
region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the
first developer, wherein the expedient comprises an acid or an acid generator chosen from thermal acid generators, photoacid
generators, and combinations thereof, or a combination of any of the foregoing; and

(g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern,
leaving the solubility-switched sidewall region to form a multiple-pattern.

US Pat. No. 9,482,948

PHOTORESIST COMPOSITIONS AND METHODS OF FORMING PHOTOLITHOGRAPHIC PATTERNS

Rohm and Haas Electronic ...

1. A method of forming a photolithographic pattern, comprising:
(a) providing a substrate comprising one or more layer to be patterned over a surface of the substrate;
(b) applying a layer of a photoresist composition over the one or more layer to be patterned;
(c) patternwise exposing the photoresist composition layer to actinic radiation;
(d) heating the exposed photoresist composition layer in a post-exposure bake process; and
(e) applying a developer to the photoresist composition layer, wherein unexposed portions of the photoresist layer are removed
by the developer, leaving a photoresist pattern over the one or more layer to be pattern;

wherein the photoresist composition comprises:
a first polymer which is acid sensitive;
a second polymer formed from a monomer having the following general formula (I):

wherein: P is a polymerizable functional group; Z is a spacer unit chosen from optionally substituted linear or branched aliphatic
and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking moiety chosen from —O—, —S—, —COO—
and CONR1—, wherein R1 is chosen from hydrogen and substituted and unsubstituted C1 to C10 linear, branched and cyclic hydrocarbons; n is an integer
from 0 to 5; and R is chosen from substituted and unsubstituted C1 to C20 linear, branched and cyclic hydrocarbons;

wherein the second polymer is acid insensitive and free of fluorine and silicon, and wherein the second polymer has a surface
energy lower than a surface energy of the first polymer;

a photoacid generator; and
a solvent.

US Pat. No. 9,752,051

POLYARYLENE POLYMERS

Rohm and Haas Electronic ...

1. A composition comprising one or more curable arylene oligomers comprising as polymerized units one or more first monomers
having two cyclopentadienone moieties and one or more second monomers having two or more alkyne moieties; one or more curing
agents of the formula

wherein Ar4, Ar5 and Ar6 are independently aromatic moieties having from 1 to 3 aromatic rings, each of which may be unsubstituted or substituted;
wherein in at least one of Ar4, Ar5 and Ar6 is substituted with hydroxyl; and one or more organic solvents.

US Pat. No. 9,541,834

IONIC THERMAL ACID GENERATORS FOR LOW TEMPERATURE APPLICATIONS

Rohm and Haas Electronic ...

1. A method for providing a photoresist relief image, comprising:
a) applying a coating layer of a chemically amplified photoresist composition on a substrate;
b) exposing the photoresist layer to activating radiation and developing the exposed photoresist layer to provide a photoresist
relief image;

c) applying over the exposed photoresist composition coating layer a coating layer of a chemical trim overcoat composition
comprising a thermal acid generator of formula (I);

(A?)(BH)+  (I)

in which
A? is the anion of an organic or inorganic acid having a pKa of not more than 3; and

(BH)+ is the monoprotonated form of a nitrogen-containing base B having a pKa between 0 and 5.0, and a boiling point less than
170° C.;

d) heating the chemical trim overcoat composition layer; and
e) developing the photoresist layer to provide a photoresist relief image.
US Pat. No. 9,453,139

HOT MELT COMPOSITIONS WITH IMPROVED ETCH RESISTANCE

Rohm and Haas Electronic ...

1. A hot melt composition comprising one or more non-aromatic cyclic (alkyl)acrylates, one or more waxes comprising an acid
number of 0 to 30 mg KOH/g, wherein the one or more waxes comprising an acid number of 0 to 30 mg KOH/g are chosen from candelilla
waxes, esterified montan waxes, ozokerite waxes, ceresin waxes, synthesized hydrocarbon waxes and hydrogenated waxes, and
one or more radical initiators.

US Pat. No. 9,448,483

PATTERN SHRINK METHODS

Dow Global Technologies L...

1. A pattern shrink method, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) providing a resist pattern over the one or more layers to be patterned;
(c) coating a shrink composition over the pattern, wherein the shrink composition comprises a polymer and an organic solvent,
wherein the polymer comprises a group containing a hydrogen acceptor effective to form a bond with an acid group and/or an
alcohol group at a surface of the resist pattern, wherein the group containing the hydrogen acceptor is an oxygen-containing
group or a nitrogen-containing group chosen from primary amine, amide, pyridine, indole, imidazole, triazine, pyrrole, purine,
diazetidine, dithiazine, quinoline, carbazole, acridine, indazole, and benzimidazole groups; and wherein the composition is
free of crosslinkers; and

(d) rinsing residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern.

US Pat. No. 9,481,810

SILYLATED POLYARYLENES

Rohm and Haas Electronic ...

1. An arylene oligomer comprising as polymerized units a first monomer having two cyclopentadienone moieties and a second
monomer having two or more alkyne moieties, wherein at least one alkyne moiety is directly bonded to a silicon atom, and wherein
the second monomer is chosen from formula (5) and formula (6)
wherein a is an integer from 0 to 4; b is 2 or 3; c is 2 or 3; each R6 is independently chosen from H, Si(R8)3, C1-10 alkyl, C1-10 alkoxy, C7-15 aralkyl, C6-10 aryl, and substituted C6-10 aryl; each R7 is independently chosen from H, C1-10 alkyl, C1-10 alkoxy, C7-15 aralkyl, C6-10 aryl, and substituted C6-10 aryl, each R8 is independently chosen from H, halogen, hydroxyl, C1-10 alkyl, C1-10 alkoxy, C7-15 aralkyl, C7-15 aralkoxy, C6-10 aryl, C6-20 aryloxy, and substituted C6-10 aryl; and Ar3 is C6-10 carbocyclic aryl; provided that at least one R6 is Si(R8)3.

US Pat. No. 9,475,763

PHOTORESIST COMPRISING NITROGEN-CONTAINING COMPOUND

Rohm and Haas Electronic ...

1. A photoresist composition comprising:
(a) one or more resins;
(b) one or more photoacid generator compounds; and
(c) one or more nitrogen-containing compounds that each comprise 1) two or more hydroxyl substituents and 2) one or more photoacid-labile
ester groups and/or photoacid-labile acetal groups, with the exclusion of N-(t-butoxy carbonyl)diethanolamine.

US Pat. No. 9,458,348

PHOTORESIST OVERCOAT COMPOSITIONS AND METHODS OF FORMING ELECTRONIC DEVICES

Rohm and Haas Electronic ...

1. A photoresist overcoat composition, comprising:
a polymer comprising as polymerized units a monomer of the following general formula (I):

wherein: R1 is chosen from hydrogen and substituted or unsubstituted C1 to C3 alkyl; R2 is chosen from C4 to C8 alkyl; X is oxygen, sulfur or is represented by the formula NR3, wherein R3 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl; and Z is a single bond or a spacer unit chosen
from optionally substituted aliphatic and aromatic hydrocarbons, and combinations thereof, optionally with one or more linking
moiety chosen from —O—, —S—, —COO— and —CONR4— wherein R4 is chosen from hydrogen and substituted and unsubstituted C1 to C10 alkyl;

wherein the polymer is free of silicon and fluorine;
an organic solvent; and
a basic quencher;
wherein the photoresist overcoat composition is free of acid generator compounds.

US Pat. No. 9,441,070

DIVINYLARENE DIOXIDE COMPOSITIONS HAVING REDUCED VOLATILITY

Rohm and Haas Electronic ...

1. An underfill composition comprising a divinylarene dioxide, a hydroxy-substituted dioxide compound, and a curing agent,
wherein the hydroxy-substituted dioxide compound has the structure

where Ar1 is an arene residue; R5 is a (C1-C12)alkylene or (C1-C12)alkylidene; and a =0 or 1.

US Pat. No. 9,440,899

PURIFICATION METHOD

Rohm and Haas Electronic ...

1. A method of separating a secondary alcohol compound from a primary alcohol compound comprising: providing a mixture of
a secondary alcohol compound and a primary alcohol compound; reacting the mixture with an amount of an acylating agent of
formula 1 sufficient to acylate the primary alcohol compound in the presence of an acid catalyst to form a partially acylated
mixture comprising the secondary alcohol compound and acylated primary alcohol compound,

wherein R1 is a bulky group selected from the group consisting of branched C4-20 alkyl, C5-20 cycloalkyl, substituted C5-20 cycloalkyl, C6-20 aryl, and substituted C6-20 aryl; Y is selected from the group consisting of halogen, OH, and —O—C(O)—R1; and separating the secondary alcohol compound from the acylated primary alcohol compound, the separated secondary alcohol
compound being substantially free of the primary alcohol compound; wherein the acylation step is free of metal catalysts and
enzymatic catalysts; and wherein the secondary alcohol compound is separated from the acylated primary alcohol compound by
one or more of distillation, column chromatography, or crystallization.

US Pat. No. 9,403,762

REACTION PRODUCTS OF GUANIDINE COMPOUNDS OR SALTS THEREOF, POLYEPOXIDES AND POLYHALOGENS

Rohm and Haas Electronic ...

1. A compound comprising a reaction product of one or more guanidine compounds or salts thereof, one or more polyepoxide compounds
and one or more polyhalogen compounds, wherein the one or more polyhalogen compounds have a formula:
X1—R16—X2  (VII)
wherein X1 and X2 may be the same or different and are halogens chosen from chlorine bromine fluorine and iodine; R16 is a moiety having formula:
—CH2—R17—CH2—  (VIII)
wherein R17 is a linear or branched, substituted or unsubstituted (C1-C18)alkyl, substituted or unsubstituted (C6-C12)cycloalkyl, substituted or unsubstituted (C6-C15)aryl, —CH2—O—(R18—O)q—CH2— where R18 is a substituted or unsubstituted, linear or branched (C2-C10)alkyl and q is an integer of 1-10.

US Pat. No. 9,145,617

ADHESION PROMOTION OF CYANIDE-FREE WHITE BRONZE

Rohm and Haas Electronic ...

1. A method comprising:
a) depositing onto a substrate comprising a copper containing layer a metal layer composed of zinc or a binary zinc/copper
alloy adjacent the copper containing layer;

b) drying the substrate with compressed air before heating for 0.5 to 2 hours at a temperature from 100° C. to 200° C. to
form a brass layer; and

c) electroplating a tin/copper alloy layer from a cyanide-free tin/copper electroplating bath adjacent the brass layer.

US Pat. No. 9,809,883

FORMALDEHYDE FREE ELECTROLESS COPPER PLATING COMPOSITIONS AND METHODS

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a printed wiring board comprising a plurality of through-holes;
b) desmearing the through-holes; and
c) depositing copper on walls of the through-holes using an electroless copper composition consisting of one or more sources
of copper ions, one or more chelating agents selected from the group consisting of polycarboxylic acids, salts thereof, polyaminocarboxylic
acids and salts thereof, water, optionally one or more stabilizers selected from the group consisting of amines, alkanolamines,
thioamides, azoles and salts thereof, optionally one or more surfactants, and one or more reducing agents having formula:

wherein Xy+ is a neutralizing counter cation of formula (I), where y+ is an integer of one or greater and Xy+ may be H+, ammonium cation, quaternary ammonium cation, sulfonium cation, phosphonium cation, pyradinium cation, monovalent metal cation,
multivalent metal cation or divalent organometallic cation;
R and R? are independently hydrogen, carboxyl, carboxyalkyl, sulfonate, sulfoxide, unsubstituted, linear or branched alkyl,
sulfinate; substituted or unsubstituted aryl;

Z is chosen from unsubstituted, linear or branched (C1-C6)alkyl, acetyl or substituted or unsubstituted (C6-C10) aryl; m is an integer of 1 to 6; and n is 1; and the composition is free of formaldehyde.

US Pat. No. 9,809,672

AROMATIC RESINS FOR UNDERLAYERS

Rohm and Haas Electronic ...

1. A reaction product formed from a combination comprising one or more first monomers of the formula

wherein Y is selected from H, C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —C1-C30alkylene-OR1, and —C1-C30alkylidene-OR1; each R is independently selected from C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —OR1, —C1-C30alkylene-OR1, and —C1-C30alkylidene-OR1; R1 is selected from H, C1-C30alkyl, C6-C30aryl, substituted C6-C30aryl, and C7-C30aralkyl; and n is an integer selected from 0 to 7; and one or more second monomers of formula (IIa) or (IIb)


wherein A represents 1 to 4 fused aromatic rings; A1 represents 1 to 3 fused aromatic rings; each of A2 and A3 may be present
or absent and each of A2 and A3 represents 1 to 2 fused aromatic rings; each R2 is independently selected from C1-C30alkyl, C2-C30alkenyl, C7-C30aralkyl, C6-C30aryl, substituted C6-C30aryl, —OR3, —C1-C30alkylene-OR3; each R3 is selected from H, C1-C30alkyl, and C6-C30aryl; and m is an integer from 0 to 13; wherein A1, A2 and A3 represent a total of 3 fused aromatic rings.

US Pat. No. 9,696,624

NANOPARTICLE-POLYMER RESISTS

ROHM AND HAAS ELECTRONIC ...

1. A composite, which is a blend comprising:
a nanoparticle comprising a core and a coating surrounding the core; and
a polymer,
wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and

wherein the polymer is a polymerization product of a group of reactants consisting of
a photoacid generator comprising a polymerizable group,
a monomer of formula (IV-A):

wherein,
Ra is independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl; and

Rb is independently H, C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl, wherein each Rb is separate or at least one Rb is bonded to an adjacent Rb to form a cyclic structure, and optionally,

a monomer selected from the group consisting of a base-soluble monomer of formula (V) or a lactone-containing monomer of formula
(VI), but not both:


wherein,
W is a base-reactive group comprising —C(?O)—OH; —C(CF3)2OH; —NH—SO2—Y1 where Y1 is F or C1-4 perfluoroalkyl; an aromatic —OH; or an adduct of any of the foregoing with a vinyl ether,

a is an integer of 1 to 3, and
L is a monocyclic, polycyclic, or fused polycyclic C4-20 lactone-containing group; and

a chain transfer agent of formula (I);

wherein:
Z is a y valent C1-20 organic group,

x is 0 or 1, and
Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

US Pat. No. 9,557,646

PHENOLIC POLYMERS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

1. A photoresist composition comprising a photoactive component and a resin, the resin comprises a structure of the following
formula:

wherein each Z is the same or different bridge unit;
X comprises one or more alkyl, oxygen or sulfur atoms;
each R1 is the same or different non-hydrogen substituent; and m is an integer of from zero to 4;

AL is a moiety that comprises a photoacid-labile group;
Y is a moiety that is distinct from the spaced phenolic group or moiety that comprises AL, and Y is selected from the group
consisting of phenyl; phenyl substituted with halogen, cyano, alkyl or alkoxy; an ester that does not undergo a photoacid-indueed
cleavage reaction during exposing and developing of the photoresist layer; an alicyclic group; and a lactone; and

a, b and c are mole percents of the respective polymer units based on total repeat units in the polymer and a, b and c are
each greater than zero.

US Pat. No. 9,598,787

METHOD OF FILLING THROUGH-HOLES

Rohm and Haas Electronic ...

1. A method consisting of:
a) providing a substrate with a plurality of through-holes and a layer of copper flash on a surface of the substrate and walls
of the plurality of through-holes;

b) treating the substrate by applying an aqueous acid solution to at least the plurality of through-holes, the aqueous acid
solution consisting of one or more inorganic acids, one or more reaction products of one or more aromatic heterocyclic nitrogen
compounds and one or more epoxy-containing compounds, the one or more reaction products are in amounts of 1 ppm to 50 ppm,
and water;

c) providing an acid copper electroplating bath comprising one or more sources of copper ions, one or more acids, one or more
brighteners and one or more levelers;

d) immersing the treated substrate in the acid copper electroplating bath comprising one or more sources of copper ions, one
or more acids, one or more brighteners and one or more levelers; and

e) electroplating to at least fill the through-holes of the treated substrate with copper using the acid copper electroplating
bath comprising one or more sources of copper ions, one or more acids, one or more brighteners and one or more levelers.

US Pat. No. 9,562,286

INCREASING ZINC SULFIDE HARDNESS

Dow Global Technologies L...

1. A composition comprising zinc sulfide and 0.5 molar % to 10 molar % of silicon as a dopant.

US Pat. No. 9,868,820

POLYARYLENE MATERIALS

Rohm and Haas Electronic ...

1. An oligomer comprising as polymerized units a first monomer comprising two cyclopentadienone moieties, a second monomer
having the formula (1), and a third monomer having the formula (2)

wherein a is the number of R groups and is an integer from 0 to 4; b is 1 or 2; each R is independently chosen from C1-4 alkyl, halo C1-4 alkyl, C1-4 alkoxy, C1-4 aralkyl, and optionally substituted C6-10 aryl; each R1 is independently H or optionally substituted C6-10 aryl; R2 is H, optionally substituted C1-10 alkyl, optionally substituted C7-12 aralkyl, optionally substituted C6-10 aryl, or R3; and R3 is a polar moiety selected from the group consisting of carboxyl, C2-12 aliphatic carboxylate, hydroxy C1-10 alkyl, C7-20 aryl carboxylic acid, C8-20 aryl carboxylic acid anhydride, C7-20 aryl carboxylates, C7-20 aryl amide, and C8-20 aryl imide.

US Pat. No. 9,508,549

METHODS OF FORMING ELECTRONIC DEVICES INCLUDING FILLING POROUS FEATURES WITH A POLYMER

Dow Global Technologies L...

1. A method of forming an electronic device, comprising:
(a) providing a semiconductor substrate comprising a porous feature on a surface thereof;
(b) applying a composition over the porous feature, wherein the composition comprises a polymer and a solvent, wherein the
polymer comprises a repeat unit of the following general formula (I):


 wherein: Ar1, Ar2, Ar3 and Ar4 independently represent an optionally substituted divalent aromatic group; X1 and X2 independently represent a single bond, —O—, —C(O)—, —C(O)O—, —OC(O)—, —C(O)NR1—, —NR2C(O)—, —S—, —SO2— or an optionally substituted C1-20 divalent hydrocarbon group, wherein R1 and R2 independently represent H or a C1-20 hydrocarbyl group; m is 0 or 1; n is 0 or 1; o is 0 or 1; and m and o are not both 0; and

(c) heating the composition, wherein the polymer is disposed in pores of the porous feature.

US Pat. No. 9,508,553

PHOTORESISTS AND METHODS FOR USE THEREOF

Rohm and Haas Electronic ...

1. A method for providing an ion-implanted semiconductor substrate comprising:
providing a semiconductor substrate having coated thereon a relief image of chemically-amplified positive-acting photoresist
composition,

wherein the chemically-amplified positive-acting photoresist composition comprises 1) a resin, 2) a photoactive component
and 3) a multi-keto resin comprising as a polymerized unit at least one monomer of the following Formula (I):


where in Formula (I) R is hydrogen or optionally substituted alkyl; and X is hydrogen or a non-hydrogen substituent; and
applying ions to the substrate.
US Pat. No. 9,447,220

SELF-ASSEMBLED STRUCTURES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME

ROHM AND HAAS ELECTRONIC ...

1. A graft block copolymer comprising:
a first block polymer; the first block polymer comprising a backbone polymer and a first graft polymer; where the first graft
polymer comprises a surface energy reducing moiety; and

a second block polymer; the second block polymer being covalently bonded to the first block; wherein the second block comprises
the backbone polymer and a second graft polymer; where the second graft polymer comprises a functional group that is operative
to crosslink the graft block copolymer.

US Pat. No. 9,228,269

TIN ALLOY PLATING SOLUTION

Rohm and Haas Electronic ...

1. A tin alloy plating solution consisting of tin ions, silver ions, metal ions selected from the group consisting of copper
ions and bismuth ions, an organic acid or an inorganic acid, optionally one or more additives selected from the group consisting
of complexing agents, grain refiners, antioxidants, gloss agents, pH regulators, organic solvents and surfactants, water and
peptides with cysteine residues, wherein a range of peptides with cysteine residues are 0.3 to 1.8 times the moles of silver
ions.
US Pat. No. 9,863,040

METHOD OF INCREASING ZINC SULFIDE HARDNESS

Dow Global Technologies L...

1. A method comprising:
a) providing a source of zinc, a source of sulfur and a source of one or more dopants chosen from selenium and silicon;
b) injecting the source of zinc as a gas at 0.2 to 1 slpm, the source of sulfur as a gas at 0.1 to 0.9 slpm and the one or
more sources of selenium and silicon as a gas at 0.01 slpm to 0.1 slpm into a chemical vapor deposition chamber comprising
an inert gas, the pressure in the chemical vapor deposition chamber ranges from 20 to 50 Torr; and

c) chemical vapor depositing one or more layers of a composition comprising zinc sulfide and 0.5 molar % to 10 molar % of
one or more of the dopants chosen from selenium and silicon on a substrate, a temperature of the substrate is from 600° C.
to 800° C.

US Pat. No. 9,809,892

INDIUM ELECTROPLATING COMPOSITIONS CONTAINING 1,10-PHENANTHROLINE COMPOUNDS AND METHODS OF ELECTROPLATING INDIUM

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate comprising a metal layer;
b) contacting the substrate with an indium electroplating composition comprising one or more sources of indium ions, one or
more 1,10-phenanthroline compounds in amounts of 0.1 ppm to 15 ppm and citric acid, salt of citric acid or mixtures thereof;
and

c) electroplating an indium metal layer on the metal layer of the substrate with the indium electroplating composition.
US Pat. No. 9,502,254

PHOTORESISTS AND METHODS FOR USE THEREOF

Rohm and Haas Electronic ...

1. A coated substrate comprising:
a semiconductor wafer having coated thereon a relief image of chemically-amplified positive-acting photoresist composition
that comprises as distinct components (1) a resin wherein less than 15 percent of total repeat units of the resin are aromatic,
(2) a photoactive component and (3) a phenolic component; and

the wafer having applied dopant ions.

US Pat. No. 9,459,534

PHOTOLITHOGRAPHIC METHODS

Rohm and Haas Electronic ...

12. A method of forming an electronic device, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) forming a photoresist layer over the one or more layers to be patterned;
(c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a basic
quencher, a plurality of polymers and an organic solvent;

(d) exposing the photoresist layer to actinic radiation; and
(e) developing the exposed photoresist layer with an organic solvent developer.
US Pat. No. 9,611,560

SULFONAMIDE BASED POLYMERS FOR COPPER ELECTROPLATING

Rohm and Haas Electronic ...

1. An electroplating composition comprising one or more sources of copper ions, water, one or more suppressors, one or more
brightening agents, an electrolyte comprising one or more acids selected from the group consisting of sulfuric acid, methanesulfonic
acid, ethanesulfonic acid, propanesulfonic acid and hydrochloric acid and one or more sources of halide ions, and a reaction
product of one or more sulfonamides or salts thereof, and one or more epoxides.

US Pat. No. 9,598,786

AMINO SULFONIC ACID BASED POLYMERS FOR COPPER ELECTROPLATING

Rohm and Haas Electronic ...

1. A method comprising:
a) providing a substrate;
b) providing a composition comprising one or more sources of copper ions, optionally one or more sources of tin ions, an electrolyte
and a reaction product comprising: one or more amino sulfonic acids or salts thereof having a formula:


wherein X comprises hydrogen or an alkali metal ion; R? comprises hydrogen, hydroxyl, linear or branched (C1-C5)alkyl, hydroxy(C1-C5)alkyl, or substituted or unsubstituted aryl; R comprises linear, branched, substituted or unsubstituted (C1-C20)alkylene moiety, substituted or unsubstituted (C5-C10)alicyclic, or substituted or unsubstituted aromatic moiety of 6 to 18 carbons, one or more amines, one or more polyepoxides
and one or more epihalohydrins;

c) contacting the substrate with the composition;
d) applying a current to the substrate and the composition; and
e) depositing a copper or copper/tin alloy on the substrate.
US Pat. No. 9,597,676

STABLE CATALYSTS FOR ELECTROLESS METALLIZATION

Rohm and Haas Electronic ...

1. An aqueous catalyst solution comprising one or more reducing agents and nanoparticles comprising one or more sources of
precious metals chosen from silver salts, platinum salts, palladium salts and iridium salts and one or more flavonoid glycosides
and hydrates thereof.
US Pat. No. 9,518,194

TOUGHENED ARYLCYCLOBUTENE POLYMERS

Dow Global Technologies L...

1. A composition comprising: a) a curable material chosen from one or more arylcyclobutene monomers, one or more polymers
comprising one or more arylcyclobutene monomers as polymerized units, and mixtures thereof; and b) one or more toughening
agents having the formula: R1—(O-A)x(OCH2CH2)y—OR2; wherein A is CH2CHR or CHRCH2; R is a C2-8 hydrocarbyl moiety; R1 and R2 are independently chosen from H, C1-20 alkyl, C6-20 aryl, C7-40 substituted aryl, C2-20 alkenyl, C2-20 alkynyl, maleimide, maleamide/ester, maleamide/carboxylic acid, and (meth)acryloyl; x is an integer from 2 to 500; and y is
an integer from 0 to 500.

US Pat. No. 9,500,947

ACID GENERATOR COMPOUNDS AND PHOTORESISTS COMPRISING SAME

Rohm and Haas Electronic ...

14. A photoresist composition comprising:
(a) a polymer; and
(b) an acid generator compound that comprises a structure of Formula (I):
wherein: Z is a counter anion;
R is a non-hydrogen substituent;
X is >C=0;each T and each T? are the same or different non-hydrogen substituent;each L and each L? are the same or different acid-labile group, with T, L, T?, and U nonhydrogen groups may be taken together
to form a ring;
m and m? are each independently 0, 1, 3 or 4; and
n and n? are each independently 0, 1, 2, 3 or 4,
wherein if R does not comprise an acid-labile group, then at least one of n and n? is greater than zero whereby the acid generator
compound comprises at least one acid-labile group; and

wherein the acid generator compound exhibits a reduction potential of ?0.9 to 0 V (vs. Ag/AgCl, cathodic peak potential) in
a standard reduction potential assay.

US Pat. No. 9,490,117

DIRECTED SELF-ASSEMBLY PATTERN FORMATION METHODS AND COMPOSITIONS

Dow Global Technologies L...

1. A method of forming a pattern by directed self-assembly, comprising:
(a) providing a semiconductor substrate comprising one or more layers to be patterned;
(b) applying a crosslinkable underlayer composition over the one or more layers to be patterned to form a crosslinkable underlayer,
wherein the crosslinkable underlayer composition comprises a crosslinkable polymer comprising a first unit formed from a monomer
of the following general formula (I-A) or (I-B):


wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X1 is a monovalent electron donating group; X2 is a divalent electron donating group; Ar1 and Ar2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon
atoms on the same aromatic ring of Ar1 or Ar2; m and n are each an integer of 1 or more; and each R1 is independently a monovalent group; wherein the first unit is present in the crosslinkable polymer in an amount of from 3
to 10 mol %, based on the polymer;

(c) heating the crosslinkable underlayer to form a crosslinked underlayer;
(d) patterning the crosslinked underlayer;
(e) forming a self-assembling layer comprising a block copolymer over the patterned crosslinked underlayer; and
(f) annealing the self-assembling layer.
US Pat. No. 9,273,215

ADHESION PROMOTER

Rohm and Haas Electronic ...

1. A process for manufacturing a device, comprising:
providing a device substrate having a surface to be coated;
treating the surface to be coated with an adhesion promoting composition comprising an poly(alkoxysilane) having from 2 to
6 alkoxysilane moieties and a solvent, wherein the poly(alkoxysilane) is hydrolyzed with ?1 mole % of water, and wherein the
composition comprises ?1 mole % of alcohol of hydrolysis; and

disposing a coating composition comprising an oligomer chosen from polyarylene oligomers, poly(cyclic-olefin) oligomers, arylcyclobutene
oligomers, vinyl aromatic oligomers, and mixtures thereof on the treated surface.

US Pat. No. 9,809,891

PLATING METHOD

Rohm and Haas Electronic ...

1. A method of filling a via in an electronic device with copper comprising: providing an acidic copper electroplating bath
comprising a source of copper ions, an acid electrolyte, a source of halide ions, an accelerator, a leveler, and a suppressor,
wherein the copper electroplating bath has a dynamic surface tension of ?40 mN/m; providing as a cathode an electronic device
substrate having one or more vias to be filled with copper and having a conductive surface; contacting the electronic device
substrate with the copper electroplating bath; and applying a potential for a period of time sufficient to fill the vias with
a copper deposit; wherein the copper deposit is substantially void-free and substantially free of surface defects; and wherein
the suppressor is a branched secondary alcohol ethoxylate.

US Pat. No. 9,507,259

PHOTORESIST COMPOSITION

ROHM AND HAAS ELECTRONIC ...

1. A composition comprising:
an acid-sensitive polymer, and
a cyclic sulfonium compound having the formula:
(Ra)1—(Ar)—S+(—CH2—)m·?O3S—(CRb2)n—(L)p—X

or the formula:
(Ra)1—(Ar)—S+(—CH2—)m·


wherein
Ra is isopropyl, t-butyl, cyclopentyl, or cyclohexyl,

Ar is para-phenylene,
each Rb is independently F or a linear C1-4 perfluoroalkyl group,

L is a C1-30 linking group including an C(?O)—NR— or —O—C(?O)—NR— moiety, wherein R is H or X,

X is a substituted or unsubstituted, C5 or greater polycyclic or fused polycyclic cycloaliphatic group, optionally comprising a heteroatom comprising O, S, N, F,
or a combination comprising at least one of the foregoing,

Z1 is —O— or —O—C(?O)—,

R18 to R21 are independently H, F, C1-10 alkyl, or C1-10 fluoroalkyl,

R22 is norbornyl, cholate, a C8 caged lactone, or a 1- or 2-adamantyl group optionally comprising an —OH, —OCH3, or —OCF3 group, and

1 is 1, m is 4, n is 2, p is 1, r is 2 to 4, and s is 0 to 4,
provided that when Z1 is —O—C(?O)— and s is 0, r is 4,

wherein the acid-sensitive polymer comprises:
(i) a structural unit comprising a monocyclic acid-cleavable group protecting a base-soluble group,
(ii) a structural unit comprising a polycyclic acid-cleavable group protecting a base-soluble group,
wherein the structural unit having the monocyclic or polycyclic acid-cleavable protective group is derived from
a monomer having the formula:
H2C?C(Rc)—C(?O)—O-A1
wherein Rc is H, C1-6 alkyl, F, or CF3 and A1 is a C4-50 tertiary alkyl-containing group in which a tertiary center of A1 is connected to an ester oxygen atom of the monomer, or

a monomer having the formula:
H2C?C(Rd)—C(?O)—O—C(Re)2—O—(CH2)o-A2
wherein Rd is H, C1-6 alkyl, F, or CF3, each Re is independently H or a C1-4 alkyl group, A2 is a C1-30 cycloaliphatic group, and o is an integer of 0-4,

(iii) a structural unit derived from a lactone monomer, and
(iv) a structural unit derived from a polar monomer comprising a hydrogen donor group.
US Pat. No. 9,464,224

TRANSFORMATIVE WAVELENGTH CONVERSION MEDIUM

Rohm and Haas Electronic ...

7. A lighting device, comprising:
a light source, wherein the light source produces light having a source luminescence spectrum; and
an active layer, wherein the active layer comprises the transformative wavelength conversion medium of claim 1 in a cured state;
wherein the phosphor is radiationally coupled to the light source.
US Pat. No. 9,102,901

METHODS AND COMPOSITIONS FOR REMOVAL OF METAL HARDMASKS

Rohm and Haas Electronic ...

1. A process for removing a film from a substrate, said process comprising applying a composition to the film, and
wherein the composition comprises at least the following:
a) water; and
b) at least one compound selected from the following compounds (i-v):
i) NR4HF2 (Formula 1), wherein R?H, alkyl, substituted alkyl,

ii) NR4F (Formula 2), wherein R?H, alkyl, substituted alkyl,

iii) HF (hydrofluoric acid),
iv) H2SiF6 (hexafluorosilicic acid), or

v) combinations thereof; and
wherein the film is formed from a “composition A” comprising at least one organometal compound, and wherein the at least one
organometal compound comprises at least one metal selected from Ti, Zr, Hf, Co, Mn or Zn.

US Pat. No. 9,983,477

POLYMERS AND PHOTORESIST COMPOSITIONS

Rohm and Haas Electronic ...

1. A photoresist composition comprising:(i) a first polymer comprising one or more covalently linked non-ionic photoacid generator groups, wherein the first polymer comprises less than 10 mole percent aromatic groups; and
(ii) second polymer that does not comprise photoacid generator groups.
US Pat. No. 9,745,479

ADHESION PROMOTER

Rohm and Haas Electronic ...

1. A composition comprising: an oligomer chosen from polyarylene oligomers, poly(cyclic-olefin) oligomers, arylcyclobutene
oligomers, vinyl aromatic oligomers, and mixtures thereof; a poly(alkoxysilane) hydrolyzed with ?1 mole % of water; and a
solvent; wherein the composition comprises ?1 mole % of alcohol of hydrolysis and wherein the poly(alkoxysilane) has from
2 to 6 alkoxysilane moieties.

US Pat. No. 9,611,550

FORMALDEHYDE FREE ELECTROLESS COPPER PLATING COMPOSITIONS AND METHODS

Rohm and Haas Electronic ...

1. An aqueous based composition consisting of one or more sources of copper ions, one or more chelating agents selected from
the group consisting of polycarboxylic acids, salts thereof, polyaminocarboxylic acids and salts thereof, water, optionally
one or more stabilizers selected from the group consisting of amines, alkanolamines, thioamides, azole compounds and salts
thereof, optionally one or more surfactants, and one or more reducing agents having formula:

wherein Xy+ is a neutralizing counter cation of formula (I), where y+ is an integer of one or greater and Xy+ is selected from the group consisting of H+, ammonium cation, quaternary ammonium cation, sulfonium cation, phosphonium cation, pyridinium cation, monovalent metal cation,
multivalent metal cation and divalent organometallic cation;

R and R? are independently hydrogen, carboxyl, carboxyalkyl, sulfonate, sulfoxide, unsubstituted, linear or branched alkyl,
sulfinate; substituted or unsubstituted aryl;

Z is chosen from unsubstituted, linear or branched (C1-C6) alkyl, acetyl or substituted or unsubstituted (C6-C10) aryl;

m is an integer of 1 to 6; and n is 1; and the composition is free of formaldehyde.

US Pat. No. 9,469,705

POLYMER COMPRISING REPEAT UNITS WITH PHOTOACID-GENERATING FUNCTIONALITY AND BASE-SOLUBILITY-ENHANCING FUNCTIONALITY, AND ASSOCIATED PHOTORESIST COMPOSITION AND ELECTRONIC DEVICE FORMING METHOD

ROHM AND HAAS ELECTRONIC ...

1. A polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating repeat
units, wherein each of the photoacid-generating repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing
functionality selected from the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein
the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof:
wherein the photoacid-generating repeat units have the structure
wherein
R1 is independently in each of the repeat units H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

L1 is independently in each of the repeat units —O—, —C(O)—O—, unsubstituted C6-18 arylene, or substituted C6-18 arylene;

m is independently in each of the repeat units 0 or 1;
L2 is independently in each of the repeat units an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, include one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR2, —PR2—, —C(O)—, —OC(O)O—, —N(R2)C(O)—, —C(O)N(R2)—, —OC(O)N(R2)—, —N(R2)C(O)O—, —S(O)—, —S(O)2—, —N(R2)S(O)2—, —S(O)2N(R2)—, —OS(O)2—, or —S(O)2O—, wherein R2 is H or C1-12 hydrocarbyl;

Z? is independently in each of the repeat units sulfonate (—SO2—), sulfonamidate, which is an anion of sulfonamide, —S(O)2N—R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl, or sulfonimidate, which is an anion of sulfonamide, —S(O)2N? S(O)2R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl; and

Q+ is photoacid-generating cation;

wherein at least one of L1, L2 (when m is 1), and Q+ comprises the base-solubility-enhancing functionality.

US Pat. No. 9,046,767

PHOTOACID GENERATOR, PHOTORESIST, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

16. A photoacid generator compound, having one of formulae (3a) and (3b)
wherein
s is 0 or 1;
t is 0 or 1;
u is 0 or 1;
L5 and L6 are each independently at each occurrence an unsubstituted or substituted C1-20 linear or branched alkylene, an unsubstituted or substituted C3-20 cycloalkylene, or an unsubstituted or substituted C6-20 arylene;

X2 is independently at each occurrence —O—or —N(R)—, wherein R is hydrogen or C1-6 alkyl;

x is 1;
L4 is at each occurrence an unsubstituted or substituted C6-20 arylene;

R1 is independently at each occurrence hydrogen, an unsubstituted or substituted C1-30 linear or branched alkyl, an unsubstituted or substituted C3-30 cycloalkyl, an unsubstituted or substituted C6-30 aryl, or an unsubstituted or substituted C3-30 heteroaryl; wherein each occurrence of R1 is optionally covalently linked to an adjacent occurrence of Rl; and wherein one or more occurrences of R1 are optionally substituted with a polymerizable group;

R2 is independently at each occurrence an unsubstituted or substituted C6-40 aryl, an unsubstituted or substituted C3-40 heteroaryl, an unsubstituted or substituted C1-40 alkyl, or an unsubstituted or substituted C3-4 cycloalkyl; wherein when x is 1, two groups R2 are optionally directly covalently linked to each other; and wherein one or more occurrences of R2 are optionally substituted with a polymerizable group; and

Z? is an organic anion; wherein Z? is optionally substituted with a polymerizable group.

US Pat. No. 9,957,339

COPOLYMER AND ASSOCIATED LAYERED ARTICLE, AND DEVICE-FORMING METHOD

ROHM AND HAAS ELECTRONIC ...

8. A copolymer,wherein the copolymer comprises the polymerization product of monomers comprising:
an out-of-band absorbing monomer comprising an unsubstituted or substituted C6-C18 aryl group that is free of fluorine, an unsubstituted or substituted C2-C17 heteroaryl group, a C5-C12 dienone group, or a combination thereof; and
a base-solubility-enhancing monomer selected from the group consisting of (meth)acrylate esters of poly(ethylene oxide)s, (meth)acrylate esters of poly(propylene oxide)s, base-labile (meth)acrylate esters, (meth)acrylate esters substituted with a group having a pKa of 2 to 12, and combinations thereof;
wherein the base-solubility-enhancing monomer comprises a (meth)acrylate ester of a poly(ethylene oxide) and a (meth)acrylate ester substituted with a 1,1,1,3,3,3-hexafluoro-2-hydroxy-2-propyl group;
wherein a film cast from the copolymer has an extinction coefficient, k, of 0.1 to 0.5 at a wavelength in the range of 150 to 400 nanometers; and
wherein the copolymer has a dispersity (Mw/Mn) of 1.05 to 1.2.

US Pat. No. 9,850,578

SHIELDING COATING FOR SELECTIVE METALLIZATION

Rohm and Haas Electronic ...

1. A method of metallization of a polymer substrate comprising:
a) providing a polymer substrate;
b) applying a primer comprising a 6-membered heterocyclic nitrogen compound to the polymer substrate to provide a hydrophilic
coating on the polymer substrate;

c) applying a hydrophobic top coat directly adjacent the primer to form a shielding coating on the substrate, the hydrophobic
top coat comprises one or more compounds chosen from alkyl alcohol alkoxylates, alkyl thiols, primary alkyl amines and secondary
alkylamines;

d) selectively etching the shielding coating to expose portions of the polymer substrate;
e) providing a catalyst to the polymer substrate; and
f) selectively electroless metal plating the polymer substrate.

US Pat. No. 9,583,344

PHOTORESIST PATTERN TRIMMING METHODS

Rohm and Haas Electronic ...

1. A method of trimming a photoresist pattern, comprising, in sequence:
(a) providing a semiconductor substrate comprising one or more layers to be patterned on an upper surface thereof;
(b) forming a photoresist pattern on the one or more layers to be patterned, wherein the photoresist pattern comprises a plurality
of features and is formed from a chemically amplified photoresist composition, the photoresist pattern comprising a matrix
polymer having acid labile groups;

(c) coating a photoresist trimming composition over the photoresist pattern, wherein the trimming composition comprises a
matrix polymer comprising one or more group chosen from —OH, hydroxyl styrene, hydroxyl naphthalene, hexafluoroisopropyl alcohol
and combinations thereof, a thermal acid generator and a solvent, and wherein the trimming composition is free of cross-linking
agents;

(d) heating the coated semiconductor substrate to generate an acid in the trimming composition from the thermal acid generator,
thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and

(e) contacting the photoresist pattern with a developing solution to remove the surface region of the photoresist pattern.

US Pat. No. 9,557,642

PHOTORESIST COMPOSITION AND ASSOCIATED METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A photoresist composition comprising:
a first polymer comprising, based on 100 mole percent of total repeat units, 60 to 100 mole percent of photoacid-generating
repeat units; wherein each of the photoacid-generating repeat units comprises an anion, a photoacid-generating cation, and
base-solubility-enhancing functionality; wherein either the anion or the photoacid-generating cation is polymer-bound; wherein
the base-solubility-enhancing functionality is selected from the group consisting of tertiary carboxylic acid esters, secondary
carboxylic acid esters wherein the secondary carbon is substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof; and wherein each of the photoacid-generating repeat
units independently has the structure


wherein
m is independently in each photoacid-generating repeat unit 0 or 1;
n is independently in each of the repeat units 0 or 1;
q is independently in each photoacid-generating repeat unit 0, 1, 2, 3, 4, or 5;
r is independently at each occurrence in each photoacid-generating repeat unit 0, 1, 2, 3, or 4;
L1 is independently at each occurrence an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2—, or —S(O)2O—, wherein R4 is H or C1-12hydrocarbyl;

L2 is independently at each occurrence —O—, —C(O)—, or —N(R5)—, wherein R5 is H or C1-12 hydrocarbyl;

L3 is independently at each occurrence an unsubstituted or substituted C1-20hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, comprise one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR4, —PR4—, —C(O)—, —OC(O)O—, —N(R4)C(O)—, —C(O)N(R4)—, —OC(O)N(R4)—, —N(R4)C(O)O—, —S(O)—, —S(O)2—, —N(R4)S(O)2—, —S(O)2N(R4)—, —OS(O)2, or —S(O)2O—, wherein R4 is H or C1-12 hydrocarbyl;

R1 is independently at each occurrence in each photoacid-generating repeat unit halogen, unsubstituted or substituted C1-40 hydrocarbyl, or unsubstituted or substituted C1-40 hydrocarbylene;

R3 is independently at each occurrence H, F, —CN, C1-10 alkyl, or C1-10fluoroalkyl;

X is independently in each photoacid-generating repeat unit a single bond, —O—, —S—, —C(?O)—, —C(R2)2—, —C(R2)(OH)—, —C(?O)O—, —C(=O)N(R2)—, —C(?O)C(?O)—, —S(?O)—, or —S(?O)2—, wherein R2 is independently at each occurrence hydrogen or C1-12 hydrocarbyl; and

a second polymer that exhibits a change in solubility in an alkali developer under the action of acid.

US Pat. No. 9,512,529

ELECTROPLATING BATHS OF SILVER AND TIN ALLOYS

Rohm and Haas Electronic ...

1. A tin/silver alloy electroplating bath comprising metal ions consisting of tin ions and silver ions, one or more compounds
having a formula:
X—S—Y  (I)
wherein X and Y may be substituted or unsubstituted phenol groups, HO—R— or —R?S—R?—OH with the proviso that when X and Y
are the same they are substituted or unsubstituted phenol groups, and wherein R, R? and R? are the same or different and are
linear or branched alkylene radicals having 1 to 20 carbon atoms; and one or more mercaptotetrazole compounds having a formula:


wherein M is hydrogen, NH4, sodium or potassium and R1 is substituted or unsubstituted, linear or branched (C2-C20) alkyl, or substituted or unsubstituted (C6-C10)aryl, wherein the tin/silver electroplating bath is free of flavone compounds.

US Pat. No. 10,095,109

ACID-CLEAVABLE MONOMER AND POLYMERS INCLUDING THE SAME

ROHM AND HAAS ELECTRONIC ...

1. A monomer having formula (I):
wherein in formula (I):
Ra is H, F, —CN, C1-10 alkyl group, or C1-10 fluoroalkyl group;
R1 and R2 are different and each chosen from an unsubstituted or substituted C1-10 linear or branched alkyl group, an unsubstituted or substituted C3-10 cycloalkyl group, an unsubstituted or substituted C3-10 alkenylalkyl group, an unsubstituted or substituted C3-10 alkynylalkyl group, or an unsubstituted or substituted C6-30 aryl group, wherein R1 and R2 optionally comprise at least one linking group selected from O and S, and wherein R1 and R2 together optionally form a ring;
represents a monocyclic or polycyclic unsubstituted or substituted C6-30 arylene group or a monocyclic or polycyclic unsubstituted or substituted C3-30 heteroarylene group, wherein “*” and “*?” indicate a point of attachment to a neighboring group or atom;“I” represents iodine; and
n is 1, 2, 3, 4, 5, 6, 7, 8, and 9.

US Pat. No. 10,042,255

BLOCK COPOLYMERS AND PATTERN TREATMENT COMPOSITIONS AND METHODS

Dow Global Technologies L...

1. A block copolymer, comprising:a first block comprising an alternating copolymer, wherein the alternating copolymer is formed by polymerization of an electron acceptor monomer with an electron donating monomer; and
a second block comprising a unit comprising a hydrogen acceptor, wherein the hydrogen acceptor is a group chosen from amine, imine, diazine, diazole, optionally substituted pyridine, and combinations thereof.

US Pat. No. 10,030,165

ARYLCYCLOBUTENES

Dow Global Technologies L...

1. A dry film structure comprising a support sheet; a layer of a polymer on the support sheet, the polymer comprising polymerized units of one or more monomers of formula (1)wherein each A is independently chosen from CR3R4—O—, —C(?O)O—, and C(?O)NH—; each B is independently chosen from —CR3R4— and —C(?O)—; each R is independently chosen from halo, cyano, hydroxy, carboxy, C1-6 alkoxy, C1-6 alkyl, C1-6 haloalkyl, C2-6 alkenyl, carboxy C1-6 alkyl, —(C?O)—C1-6 alkyl, -G-(C?O)—C1-6 alkyl, —(C?O)-G-C1-6 alkyl, —O—C4-20 aryl, —(C?O)—C4-20, aryl, -G-(C?O)—C4-20 aryl, and —(C?O)-G-C4-20 aryl; each of R1, R2, R3 and R4 is independently chosen from H, C1-10 alkyl, C2-10 alkenyl, C2-10 alkynyl, and C4-15 aryl; Z is an organic radical having 2 to 50 carbon atoms; G is O or N(R?)2; each R? is independently chosen from H, C1-6 alkyl, C4-10 aryl, and C7-15 aralkyl; x is the number of R groups and is an integer of from 0 to 2; m is an integer of from 1 to 6; n is an integer of from 0 to 5; and m+n=3 to 6; and a cover sheet on the polymer layer.
US Pat. No. 10,031,420

WET-STRIPPABLE SILICON-CONTAINING ANTIREFLECTANT

Rohm and Haas Electronic ...

1. A siloxane polymer comprising as polymerized units one or more first monomers of formula (1) or dimers thereof and one or more second monomers of formula (2) or dimers thereofR2SiX2  (1)
RSiX3  (2)
wherein each R is independently chosen from aryl, aralkyl, alkyl, alkenyl, aralkenyl, and R1; R1 is a C2-30 organic radial comprising one or more —C(O)—O—C(O)— moieties; and each X is a hydrolyzable moiety; wherein at least one R is R1; wherein at least one R is chosen from C6-20 aryl, substituted C6-20 aryl, and benzyl; and wherein ?30% of the monomers comprising the polymer comprise one or more functional moieties chosen from hydroxy, mercapto, epoxy, glycidyloxy, cyano, alkyleneoxy, sulfolanyl, and —C(O)—O—C(O)—; and wherein the polymer is free of monomers of the formula HSiX3 and SiX4 as polymerized units.
US Pat. No. 9,690,199

COATING COMPOSITIONS FOR PHOTOLITHOGRAPHY

Rohm and Haas Electronic ...

1. An underlying coating composition that comprises one or more resins that comprise thermally-labile or photoacid-labile
groups, and the composition is at least substantially free of a separate crosslinker component.

US Pat. No. 9,665,005

PATTERN TREATMENT METHODS

Dow Global Technologies L...

1. A pattern treatment method, comprising:
(a) providing a semiconductor substrate comprising a patterned feature on a surface thereof;
(b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises
a block copolymer and a solvent, wherein the block copolymer comprises a first block and a second block, wherein the first
block comprises a unit formed from a first monomer comprising an ethylenically unsaturated polymerizable group and a hydrogen
acceptor group, wherein the hydrogen acceptor group is a nitrogen-containing group, and the second block comprises a unit
formed from a second monomer comprising an ethylenically unsaturated polymerizable group and an aromatic group, provided that
the second monomer is not styrene;

(c) rinsing residual pattern treatment composition from the substrate, leaving the block copolymer bonded to the patterned
feature; and

(d) etching a layer underlying the patterned feature using the patterned feature and the bonded block copolymer as an etch
mask.

US Pat. No. 9,598,590

HOT MELT COMPOSITIONS WITH IMPROVED ETCH RESISTANCE

Rohm and Haas Electronic ...

1. A method comprising:
a. providing a hot melt composition comprising one or more non-aromatic cyclic (alkyl)acrylates, one or more waxes chosen
from candelilla waxes, esterified montan waxes, ozokerite waxes, ceresin waxes, synthesized hydrocarbon waxes and hydrogenated
waxes comprising an acid number of 0 to 30 mg KOH/g, wherein the one or more waxes are in amounts of 5 wt % to 30 wt % and
one or more radical initiators;

b. selectively depositing the hot melt composition on a substrate;
c. applying actinic radiation to the hot melts composition to cure the composition;
d. etching sections of the substrate not covered with the cured hot melt composition; and
e. removing the cured hot melt composition from the substrate with a base comprising a pH of 11 or greater to form a patterned
article.

US Pat. No. 9,581,901

PHOTOACID-GENERATING COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION, COATED SUBSTRATE, AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A copolymer comprising repeat units derived from
an acid-labile monomer;
an aliphatic, lactone-containing monomer;
a base-soluble monomer comprising a 1,1,1,3,3,3-hexafluoro-2-hydroxyprop-2-yl substituent or a —NH—S(O)2—Rb substituent wherein Rb is C1-4 perfluoroalkyl;

a photoacid-generating monomer comprising an aliphatic anion, wherein the photoacid-generating monomer comprises
or a combination thereof, wherein Ra is —H, —F, —CH3, or —CF3; and
a neutral aliphatic monomer comprising
wherein Ra is —H, —F, —CH3, or —CF3; each occurrence of Rc is independently halogen, C1-6 perfluoroalkyl, or C3-6 perfluorocycloalkyl; and q is 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; or
wherein Ra is —H, —F, —CH3 or —CF3; each occurrence of Rc is independently halogen, C1-12 hydrocarbyl, C2-10 alkenyl, C1-6 perfluoroalkyl, or C3-6 perfluorocycloalkyl; and each occurrence of q is independently 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; or
wherein Ra is —H, —F, —CH3, or —CF3; each occurrence of Rc is independently halogen, C1-12 hydrocarbyl, C2-10 alkenyl, C1-6 perfluoroalkyl, or C3-6 perfluorocycloalkyl; and each occurrence of q is independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; or
wherein Ra is —H, —F, —CH3, or —CF3; each occurrence of Rc is independently halogen, C1-12 hydrocarbyl, C2-10 alkenyl, C1-6 perfluoroalkyl, or C3-6 perfluorocycloalkyl; Rc is C1-10 alkylene or C3-10 cycloalkylene; n is 1; and each occurrence of q is independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; or
wherein Ra is —H, —F, —CH3, or —CF3; each occurrence of Rc is independently halogen, C1-12 hydrocarbyl, C2-10 alkenyl, C1-6 perfluoroalkyl, or C3-6 perfluorocycloalkyl; Rf is C1-12 alkyl, C1-6 perfluoroalkyl, C3-10 cycloalkyl, or C3-6 perfluorocycloalkyl; and each occurrence of q is independently 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, or 10; or a combination thereof.

US Pat. No. 9,493,886

LOW INTERNAL STRESS COPPER ELECTROPLATING METHOD

Rohm and Haas Electronic ...

1. A method comprising:
a) contacting a Hull Cell metal test panel with a composition comprising one or more sources of copper ions, one or more suppressors
and an accelerator at a given concentration in a range of 1 ppm and greater;

b) applying a current to the Hull Cell metal test panel for a given period of time over different current densities to electroplate
copper on the Hull Cell metal test panel;

c) determining MattCDmax by correlating a current density where the electroplated copper deposit transitions from matt to
bright at the given concentration of the accelerator; and

d) electroplating copper with a matt appearance from the composition at the MattCDmax or at a lower current density below
the MattCDmax on a substrate at the given concentration of the accelerator or optionally at a greater accelerator concentration
than the given accelerator concentration.

US Pat. No. 9,470,976

PHOTORESIST COMPOSITION AND ASSOCIATED METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

1. A photoresist composition comprising:
a first polymer comprising 60 to 100 mole percent of photoacid-generating repeat units, wherein each of the photoacid-generating
repeat units comprises (a) photoacid-generating functionality and (b) base-solubility-enhancing functionality selected from
the group consisting of tertiary carboxylic acid esters, secondary carboxylic acid esters wherein the secondary carbon is
substituted with at least one unsubstituted or substituted C6-40 aryl, acetals, ketals, lactones, sultones, alpha-fluorinated esters, beta-fluorinated esters, alpha,beta-fluorinated esters,
polyalkyleneglycols, alpha-fluorinated alcohols, and combinations thereof; and

a second polymer that exhibits a change in solubility in an alkali developer under the action of acid
wherein the photoacid-generating repeat units of the first polymer have the structure
wherein
R1 is independently in each of the repeat units H, F, —CN, C1-10 alkyl, or C1-10 fluoroalkyl;

L1 is independently in each of the repeat units —O—, —C(O)—O—, unsubstituted C6-18 arylene, or substituted C6-18 arylene;

m is 1;
L2 is independently in each of the repeat units an unsubstituted or substituted C1-20 hydrocarbylene, wherein the substituted C1-20 hydrocarbylene can, optionally, include one or more in-chain divalent heteroatom-containing groups that is —O—, —S—, —NR2, —PR2—, —C(O)—, —OC(O)O—, —N(R2)C(O)—, —C(O)N(R2)—, —OC(O)N(R2)—, —N(R2)C(O)O—, —S(O)—, —S(O)2—, —N(R2)S(O)2—, —S(O)2N(R2)—, —OS(O)2—, or —S(O)2O—, wherein R2 is H or C1-12 hydrocarbyl;

Z? is independently in each of the repeat units sulfonate (—SO3?), sulfonamidate (anion of sulfonamide; —S(O)2N?R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl), or sulfonimidate (anion of sulfonimide; —S(O)2N?S(O)2R3, wherein R3 is H or unsubstituted or substituted C1-12 hydrocarbyl);

Q+ is photoacid-generating cation; and

at least one of L1, L2 (when m is 1), and Q+ comprises the base-solubility-enhancing functionality.

US Pat. No. 9,815,930

BLOCK COPOLYMER AND ASSOCIATED PHOTORESIST COMPOSITION AND METHOD OF FORMING AN ELECTRONIC DEVICE

ROHM AND HAAS ELECTRONIC ...

6. The block copolymer of claim 1, wherein the second block comprises repeat units derived from a (meth)acrylate ester comprising at least one fluorine atom,
and wherein the (meth)acrylate ester comprising at least one fluorine atom has the structure

wherein
p is 0, 1, 2, 3, or 4,
R1 is hydrogen or methyl,

R2 is an unsubstituted or substituted C1-C18 hydrocarbylene group, and

Rf is a C1-C18 hydrocarbyl group substituted with at least one fluorine atom and,

optionally, further substituted with substituents other than fluorine.