US Pat. No. 9,288,908

CHIP CAPACITOR, CIRCUIT ASSEMBLY, AND ELECTRONIC DEVICE

ROHM CO., LTD., Kyoto (J...

1. A chip capacitor comprising:
a substrate;
a pair of external electrodes formed on the substrate;
a capacitor element connected between the pair of external electrodes; and
a bidirectional diode connected between the pair of external electrodes and in parallel to the capacitor element.

US Pat. No. 9,101,008

LIGHT EMITTER DRIVING DEVICE AND LIGHTING APPLIANCE THEREWITH

Rohm Co., Ltd., Kyoto (J...

1. A light emitter driving device comprising:
a decoder portion that monitors a rectified voltage and generates a dimming signal and a bleeder control signal;
a bleeder control portion that performs drive control of a bleeder circuit based on the bleeder control signal input from
the decoder portion, the bleeder circuit generating a bleeder current; and

a drive current control portion that controls a drive current for the light emitter in accordance with the dimming signal;
wherein

the decoder portion includes:
a hysteresis filter that has a characteristic when a difference between an input value and an output value falls in a predetermined
range, does not change the output value.

US Pat. No. 9,402,287

SWITCHING CONVERTER WITH LIGHT SOURCE DIMMING FUNCTION

ROHM CO., LTD., Kyoto (J...

1. A control circuit for a switching converter that drives a light source, the switching converter comprising:
an output capacitor arranged between an input line and an output line;
an inductor, a switching transistor, and a detection resistor arranged in series between the output line and a ground line;
and

a diode having a cathode connected to the input line and an anode connected to a connection node that connects the inductor
and the switching transistor,

and wherein the control circuit comprises:
a current limit comparator that asserts a reset pulse when a current detection signal that corresponds to a voltage drop across
the detection resistor exceeds a setting value;

a zero current detection circuit that asserts a set pulse when a current that flows through the inductor becomes substantially
zero;

a logic circuit that receives the set pulse and the reset pulse, and that generates a control pulse such that (i) when the
set pulse is asserted, the control pulse is switched to an on level that corresponds to an on state of the switching transistor,
and such that (ii) when the reset pulse is asserted, the control pulse is switched to an off level that corresponds to an
off state of the switching transistor;

a pulse dimming terminal that receives a dimming pulse having a duty ratio that is adjusted according to a target luminance
set for the light source;

a dimming pulse adjustment unit that receives the dimming pulse and a signal that corresponds to the control pulse, and that
generates an adjusted dimming pulse such that, when a transition occurs in the dimming pulse from the on level to the off
level during a period in which the control pulse is set to the on level, the transition is delayed up to a next off-level
period of the control pulse; and

an output unit that drives the switching transistor according to the control pulse during a period in which the adjusted dimming
pulse is set to the on level.

US Pat. No. 9,439,259

LED BACKLIGHT DRIVING CIRCUIT FOR LCD PANELS

ROHM CO., LTD., Kyoto (J...

1. A drive circuit, for driving a light-emitting diode (LED) string, comprising:
an output transistor, being a PNP bipolar transistor, wherein an emitter of the output transistor is connected to a cathode
of the LED string;

a current control resistor, disposed between a collector of the output transistor and a fixed voltage terminal that is stabilized
at a specific potential;

a first error amplifier, wherein an output terminal of the first error amplifier is connected to a base of the output transistor,
a first input terminal of the first error amplifier is connected to a connection point of the output transistor and the current
control resistor, and a first reference voltage is applied to a second input terminal of the first error amplifier, and the
first error amplifier enables a sink current sunk from the output terminal to flow to the current control resistor;

a switch power supply, providing an output voltage to an anode of the LED string and inputting a feedback voltage based on
the output voltage to a feedback terminal;

a second error amplifier, amplifying an error between a base voltage of the output transistor and a second reference voltage
and generating an error voltage according to the error;

a transistor, wherein a first terminal of the transistor is connected to the error voltage; and
a feedback voltage control resistor having a first end connected to a second terminal of the transistor and a second end connected
to the feedback terminal, and the error voltage being output through the transistor and the feedback voltage control resistor
and being input to the feedback terminal.

US Pat. No. 9,069,145

OPTICAL COMMUNICATION MODULE AND METHOD FOR MAKING THE SAME

ROHM CO., LTD., Kyoto (J...

1. An optical communication module comprising:
an optical semiconductor element including an optical function region that performs light-receiving function or light-emitting
function;

a first resin member covering the optical semiconductor element, the first resin member being made of a resin that transmits
light emitted from the optical function region or light to be received by the optical function region;

a second resin member covering the first resin member; and
a main substrate comprising an obverse surface and a reverse surface, the obverse surface being in contact with the second
resin member;

wherein
the optical communication module further comprises an attachment hole for attaching an optical fiber, the attachment hole
including an opening that opens at a portion of the first resin member which is exposed from the second resin member,

the first resin member comprises an opening end surface at which the opening of the attachment hole is open, and
the main substrate comprises a substrate end surface that is flush with the opening end surface of the resin member.

US Pat. No. 9,185,753

LIGHTING SYSTEM

ROHM CO., LTD., Kyoto (J...

1. A lighting system comprising:
a main power source;
a power switch including a first terminal, a second terminal and a control terminal, the first terminal being connected to
the main power source;

a first light source driver connected to the second terminal of the power switch;
a second light source driver connected to the second terminal of the power switch;
a first light source unit driven by the first light source driver;
a second light source unit driven by the second light source driver;
a signal processing circuit for supplying to the control terminal of the power switch a switching signal for electrically
connecting or disconnecting the power switch, the signal processing circuit being configured to supply a control signal for
controlling the first light source driver and the second light source driver; and

an AC/DC converter connected between the second terminal of the power switch and each of the first light source driver and
the second light source driver;

wherein the AC/DC converter comprises a diode bridge circuit and a smoothing capacitor, and the second terminal of the power
switch is connected to the diode bridge circuit, and

the power switch comprises a solid state relay comprising a triac.

US Pat. No. 9,099,628

SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNS

ROHM CO., LTD., Kyoto (J...

1. A semiconductor light emitting device, comprising:
a substrate structure that includes a substrate and an adhering layer formed on the substrate, the adhering layer being a
metal layer disposed on the substrate;

a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer, the substrate
being stuck to the semiconductor layer using the adhering layer; and

an electrode formed on a surface of the semiconductor layer,
wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface
of the semiconductor layer at a side of the electrode.

US Pat. No. 9,472,688

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor layer;
a trench formed selectively in an obverse surface portion of the semiconductor layer and defining a unit cell of predetermined
shape in the obverse surface portion;

a second conductivity type layer formed to conform to a portion or an entirety of an inner surface of the trench;
an obverse surface layer of a first conductivity type formed so as to be exposed from an obverse surface of the semiconductor
layer in the unit cell;

a reverse surface layer of the first conductivity type formed so as to be exposed from a reverse surface of the semiconductor
layer;

a drift layer of the first conductivity type formed between the obverse surface layer and the reverse surface layer of the
semiconductor layer and being of lower concentration than the obverse surface layer and the reverse surface layer;

a first electrode contacting the exposed part of the obverse surface layer and forming an ohmic contact with the obverse surface
layer; and

a second electrode contacting the reverse surface layer and forming an ohmic contact with the reverse surface layer, wherein
the first electrode covers the obverse surface and includes an embedded portion that is embedded in the trench and
the embedded portion of the first electrode forms an ohmic contact with the second conductivity type layer.

US Pat. No. 9,338,369

DRIVING CIRCUIT FOR VOICE COIL MOTOR, LENS MODULE AND ELECTRONIC DEVICE USING THE SAME, AND DRIVING METHOD FOR VOICE COIL MOTOR

ROHM CO., LTD., (JP)

1. A driving circuit configured to supply a driving current to a voice coil motor, the driving circuit comprising:
a D/A converter of a second number (N) of bits, wherein the second number (N) is an integer;
a current driver configured to generate the driving current based on a control signal outputted from the D/A converter; and
a logic unit configured to receive an input control data having a first number (M) of bits and output an intermediate control
data having the second number (N) of bits to the D/A converter,

wherein the first number (M) is an integer larger than the second number (N), and
wherein the logic unit comprises:
a data extraction unit configured to divide the input control data into a first data having the second number (N) of bits
from a most significant bit of the input control data and a second data having a third number (M?N) of bits from a least significant
bit of the input control data , wherein the third number (M?N) corresponds to a number from subtracting the second number
(N) from the first number (M);

a counter configured to accumulatively add the second data in synchronization with a clock signal to generate a count value
having the third number (M?N) of bits;

a carry detection unit configured to assert a carry signal when a carry at a most significant bit of the count value is generated
by the counter; and

an output control unit configured to set the intermediate control data as the first data in a cycle where the carry signal
is negated or set the intermediate control data as a third data, in which one least significant bit is added to the first
data, in a cycle where the carry signal is asserted.

US Pat. No. 9,451,665

IMAGE PICKUP AUXILIARY LIGHT SOURCE DEVICE AND DIGITAL CAMERA PROVIDED WITH SAME

Rohm Co., Ltd., Kyoto (J...

1. An image pickup auxiliary light source device comprising:
a light emitting diode;
an electric double-layer capacitor that supplies electric power to the light emitting diode; and
a non-volatile memory that stores illumination color information of the light emitting diode for color correction in processing
an image picked up under illumination by the light emitting diode,

wherein the electric double-layer capacitor is supplied with electric power from a rechargeable power source battery, and
wherein the image pickup auxiliary light source device further comprises a switchover control portion that performs a switchover
between power supply from the electric double-layer capacitor to the light emitting diode and power supply directly from the
rechargeable power source battery to the light emitting diode without passing through the electric double-layer capacitor.

US Pat. No. 9,182,769

POWER SUPPLY DEVICE, AND VEHICLE-MOUNTED APPARATUS AND VEHICLE USING SAME

Rohm Co., Ltd., Kyoto (J...

1. A power supply device comprising:
a control circuit that turns on and off an output transistor to generate an output voltage from an input voltage;
an internal power supply voltage generation circuit that generates an internal power supply voltage from an external power
supply voltage; and

a power switching circuit that switches supply of the internal power supply voltage and supply of the output voltage as a
drive voltage of the control circuit.

US Pat. No. 9,147,622

POWER MODULE SEMICONDUCTOR DEVICE

ROHM CO., LTD., (JP)

1. A power module semiconductor device comprising:
a ceramic substrate;
a first pattern of a first copper plate layer disposed on a surface of the ceramic substrate;
a first semiconductor chip disposed on the first pattern;
a first pillar connection electrode disposed on the first pattern;
an output terminal connected to the first pillar connection electrode;
a first pillar electrode disposed on the first semiconductor chip;
a first diode disposed on the first pattern so as to be adjacent to the first semiconductor chip; and
a first upper surface plate electrode disposed on the first pillar electrode, the first upper surface plate electrode connected
to an anode electrode of the first diode.

US Pat. No. 9,532,464

LED LIGHTING APPARATUS

ROHM CO., LTD., Kyoto (J...

1. An LED lighting apparatus comprising:
an LED substrate having a main surface;
an LED chip mounted on the main surface of the LED substrate;
a sealing resin member made of a material that transmits light from the LED chip, the sealing resin member covering the LED
chip and having a shape of bulging in a direction in which the main surface faces; and

a case supported by the LED substrate, and including a reflecting face surrounding the sealing resin member,
wherein the sealing resin member is smaller in height with respect to the main surface of the LED substrate than the case.

US Pat. No. 9,510,442

LED LIGHT SOURCE UNIT FOR BACKLIGHT OF LIQUID CRYSTAL DISPLAY, AND LIQUID CRYSTAL DISPLAY

ROHM CO., LTD., Kyoto (J...

74. An LED light source unit comprising:
a plurality of LED chips;
a substrate;
a metal film covering a principal surface of the substrate; and
a glass layer intervening between the metal film and the substrate;
wherein the metal film comprises a plurality of layers that includes an Al layer as an outermost layer, and the LED chips
are mounted directly on the Al layer, and

wherein the glass layer is thinner in a thickness direction than the LED chips.

US Pat. No. 9,378,896

SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A solid electrolytic capacitor comprising:
a porous sintered body made of a valve metal;
a dielectric layer formed on the porous sintered body;
a solid electrolyte layer formed on the dielectric layer; and
a cathode layer formed on the solid electrolyte layer;
wherein the solid electrolyte layer includes an inner electrode layer and an outer electrode layer, the inner electrode layer
covering the dielectric layer inside the porous sintered body, the outer electrode layer covering the inner electrode layer
outside the porous sintered body,

the outer electrode layer comprises a solid particle containing layer including a conductive polymer dispersion material and
solid particles, the solid particle containing layer being formed by applying a dispersion material liquid containing the
conductive polymer dispersion material, the solid particles and a solvent to the inner electrode layer and then removing the
solvent, and

a ratio of length to thickness of each of the solid particles is 1:X, where 0.05?X?0.3.

US Pat. No. 9,397,185

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising an MIS structure that includes:
a semiconductor layer including a first conductivity type drain region, a second conductivity type body region and a first
conductivity type source region;

a source trench penetrating through the source region and the body region from a front surface of the semiconductor layer
such that the source trench reaches the drain region;

a gate insulating film in contact with the semiconductor layer; and
a gate electrode formed on the gate insulating film such that the gate electrode faces the body region across the gate insulating
film;

wherein the gate insulating film includes an AlON layer with a nitrogen composition of 5% to 40%.

US Pat. No. 9,219,127

SIC FIELD EFFECT TRANSISTOR

ROHM CO., LTD., Kyoto (J...

1. A SiC field effect transistor comprising:
a SiC semiconductor layer; and
a Metal Insulator Semiconductor (MIS) transistor structure including
a source region of a first conductivity type provided in the SiC semiconductor layer,
a body region of a second conductivity type provided in the SiC semiconductor layer in contact with the source region,
a drift region of the first conductivity type provided in the SiC semiconductor layer in contact with the body region,
a gate insulation film,
a gate electrode opposed to the body region with the gate insulation film interposed between the gate electrode and the body
region for forming a channel in the body region to cause electric current to flow between the drift region and the source
region, and

a barrier forming layer provided directly in contact with the drift region to form a junction barrier by the contact with
the drift region, the barrier forming layer further being in direct contact with the source region,

wherein the MIS transistor structure includes a vertical MIS transistor structure in which the source region and the drift
region are spaced from each other vertically and perpendicularly to a major surface of the SiC semiconductor layer with the
body region interposed therebetween,

wherein the vertical MIS transistor structure further includes:
a source trench extending from the major surface of the SiC semiconductor layer to the drift region through the source region
and the body region; and

a source electrode provided in contact with the source region, the body region and the drift region in the source trench with
the barrier forming layer being disposed in a portion of the source electrode contacting the drift region.

US Pat. No. 9,130,348

TWO-DIMENSIONAL PHOTONIC CRYSTAL LASER

KYOTO UNIVERSITY, Kyoto ...

1. A two-dimensional photonic crystal laser, comprising:
a two-dimensional photonic crystal layer having a base-body layer made of Al?Ga1-?As (O
an epitaxial growth layer created over the two-dimensional photonic crystal layer by an epitaxial method; and
a regrowth interface layer for epitaxially growing the epitaxial growth layer, the regrowth interface layer being disposed
between the two-dimensional photonic crystal layer and the epitaxial growth layer,

wherein:
a material of the regrowth interface layer is composed of same elements as a material of the base-body layer of the two dimensional
photonic crystal layer and a material of the epitaxial growth layer, while a content rate of Al and Ga of the regrowth interface
layer is different from a content rate of Al and Ga of the base-body layer of the two-dimensional photonic crystal layer and
the epitaxial growth layer;

a material of the epitaxial growth layer is composed of same elements as the base-body layer of the two-dimensional photonic
crystal layer while a content rate of each of the elements of the epitaxial growth layer is different from a content rate
of each of the elements of the base-body layer of the two-dimensional photonic crystal layer;

an Al content rate of the regrowth interface layer is higher than an Al content rate of the base-body layer of the two-dimensional
photonic crystal layer; and

the modified refractive index areas of the two-dimensional photonic crystal layer are air holes.

US Pat. No. 9,526,138

LOAD DRIVING DEVICE, AND LIGHTING APPARATUS AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A load driving device comprising:
a power supply circuit for supplying to a load an output voltage converted from an input voltage;
a detection voltage generation circuit that is connected between the load and a ground, for generating a detection voltage
that varies depending on a magnitude of a voltage drop across the load; and

a control circuit for controlling the power supply circuit so that output feedback control of the output voltage is performed
based on the detection voltage, wherein

the detection voltage generation circuit includes a constant-current source connected in series with the load and flowing
constant current that can be adjusted, the detection voltage generation circuit outputting a node voltage at a connection
node between the load and the constant-current source as the detection voltage,

the control circuit generates a control signal of the power supply circuit so that the detection voltage of a connecting point
of the load and the constant-current source becomes a constant voltage, and

the constant-current source includes:
a transistor having a first terminal connected in series with the load;
a resistor connected between a second terminal of the transistor and a ground; and
an error amplifier for generating a control signal to a control terminal of the transistor, and
wherein the power supply circuit includes:
an isolation transformer, the input voltage being applied to a primary side of the isolation transformer, and the output voltage
being supplied from a secondary side of the isolation transformer to the load, and

the power supply circuit feeds back, via a photocoupler to the primary side, a signal corresponding to the detection voltage,
in order to control the output voltage according to an output signal of the photocoupler such that the node voltage remains
constant.

US Pat. No. 9,413,272

POWER GENERATION DEVICE HAVING A DIELECTRIC BODY AND AN ELECTRET

Rohm Co., Ltd., Kyoto (J...

1. A power generation device comprising:
a dielectric body; and
an electret;
wherein a gap distance presents between the dielectric body and the electret, and the gap distance varies due to displacement
of the dielectric body toward the electret in association with vibration, whereby the power generation device generates power,

a first electrode is connected to the electret on a side not facing the dielectric body,
the first electrode is connected to a grounding terminal via a load,
a second electrode is connected to the dielectric body on a side not facing the electret,
the second electrode is directly connected to the grounding terminal, and
the load is arranged to draw, in a form of a voltage, electrical current flowing between the first electrode and the grounding
terminal due to vibration of the power generation device,

wherein the electret and the dielectric body face each other, each in an exposed state.

US Pat. No. 9,087,857

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND POWER MODULE

ROHM CO., LTD., Kyoto (J...

1. A method of manufacturing a semiconductor device, comprising:
forming an n-type base layer on an n-type drain layer;
partially forming a p-type base layer in a surface layer portion of the n-type base layer;
partially forming an n-type source layer in a surface layer portion of the p-type base layer;
forming a p-type column layer formed within the n-type base layer to extend from the p-type base layer toward the n-type drain
layer;

forming a gate insulation film on a surface of the p-type base layer between the n-type source layer and the n-type base layer;
forming a gate electrode on the gate insulation film to face, through the gate insulation film, the surface of the p-type
base layer between the n-type source layer and the n-type base layer;

forming a source electrode electrically connected to the n-type source layer;
forming a drain electrode electrically connected to the n-type drain layer; and
forming a depletion layer alleviation region arranged between the p-type column layer and the n-type drain layer so as to
be within the n-type base layer by irradiating first baryons at a rear surface side of the n-type drain layer and then converting
the first baryons to donors through heat treatment at a predetermined temperature;

forming a trap level region including second baryons locally formed within the depletion layer alleviation region, the second
baryons being heavier than the first baryons.

US Pat. No. 9,188,742

TERAHERZ-WAVE CONNECTOR AND TERAHERZ-WAVE INTEGRATED CIRCUITS, AND WAVE GUIDE AND ANTENNA STRUCTURE

ROHM CO., LTD., Kyoto (J...

1. A terahertz-wave connector, comprising:
a two dimensional photonic crystal slab;
lattice points periodically arranged in the slab, the lattice points for diffracting terahertz waves in photonic bandgap frequencies
of photonic band structure of the slab in order to prohibit existence of the terahertz waves in a plane of the slab;

a two dimensional photonic crystal waveguide disposed in the slab and formed with a line defect of the lattice points; and
an adiabatic mode converter disposed at an edge face of the slab to which the waveguide extended, the waveguide extended to
the adiabatic mode converter, wherein

the adiabatic mode converter, in a planar view of the slab, may have a tapered shape so that a tip part becomes thinner as
being distanced from the edge face of the slab, and a side surface of the tapered shape has an inclined plane.

US Pat. No. 9,121,552

LED LAMP

ROHM CO., LTD., Kyoto (J...

1. An LED lamp comprising:
an LED unit comprising a straight tube and a plurality of light emitting diodes fixed in the straight tube;
a pair of bases attached to ends of the LED unit spaced in a longitudinal direction of the unit; and
a rotational shaft connecting the LED unit and the bases to each other and fitted to at least one of either the LED unit and
the bases for rotation relative thereto, the rotational shaft being formed separate from the straight tube and the bases;

wherein the LED unit and the bases are rotatable relative to each other about an axis extending in the longitudinal direction,
and

at least one of the bases is provided with an external terminal for receiving electric power from outside.

US Pat. No. 9,113,527

ILLUMINATING DEVICE

Rohm Co., Ltd., Kyoto (J...

1. An illuminating lamp used in an illuminating device having a holder, the illumination lamp being fitted to the holder and
comprising:
a first LED group arranged to emit white illumination light;
a second LED group which is arranged in a different region from the first LED group, the second LED group also arranged to
emit white illumination light, wherein a section illuminated by the second LED group is different from that illuminated by
the first LED group;

a first control section which controls lighting of the first LED group;
a second control section which controls lighting of the second LED group; and
a signal input section common to the first and second LED groups which inputs, from outside to the first and second control
sections, a signal for controlling the first and second LED groups independently,

wherein the illuminating lamp is arranged to be fitted interchangeably as a unit to the holder.

US Pat. No. 9,351,369

LEAKAGE CURRENT DETECTION CIRCUIT, SEMICONDUCTOR APPARATUS, LED ILLUMINATION APPARATUS, AND VEHICLE

Rohm Co., Ltd., Kyoto (J...

1. A leakage current detection circuit, comprising:
a detection signal generation portion that detects a switch current flowing in a switch which is targeted for leakage monitoring,
and generates a detection signal to prohibit operation of a control target circuit which is targeted for control when the
switch current does not reach a predetermined threshold value, wherein the detection signal generation portion detects an
input voltage in accordance with the switch current, and generates the detection signal to prohibit the operation of the control
target circuit when the input voltage does not reach a predetermined threshold value voltage, and wherein the switch is disposed
on a first electric current route between a load driven by the control target circuit and a power supply that applies a voltage
to the load, and the detection signal generation portion detects the input voltage by providing an electric current into a
second electric current route different from the first electric current route.

US Pat. No. 9,257,521

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor layer made of first conductivity type;
a well region that is a second conductivity type well region formed on a surface layer portion of the semiconductor layer
and that has a channel region defined therein;

a source region that is a first conductivity type source region formed on a surface layer portion of the well region;
a trench formed in the semiconductor layer that extends downwardly from the upper surface of the source region to pass through
the source region and the well region;

a gate insulating film formed on the inner surface of the trench, the gate insulating film including a bump portion which
changes a thickness of the gate insulating film at the source region, the bump portion being formed on a side surface of the
trench, and being adjacent to the channel region; and

a gate electrode opposed to the channel region of the well region where a channel is formed through the gate insulating film.

US Pat. No. 9,128,160

BATTERY FUEL GAUGE CIRCUIT

ROHM CO., LTD., (JP)

1. A detection circuit configured to detect a remaining battery charge of a battery, and to be mounted on an electronic device
comprising at least the battery, a processor configured to integrally control the electronic device, and a communication unit,
the detection circuit comprising:
an A/D converter configured to sample a magnitude of a current discharged from the battery, and to convert a magnitude of
the current thus sampled into a digital current value;

an interface circuit configured to receive, from the processor, control data which indicates a period in which there is an
increase in current discharged from the battery;

a control unit configured to raise a sampling frequency of the A/D converter based upon control data in the period in which
there is an increase in the current; and

an integrator circuit configured to integrate the current value acquired by the A/D converter so as to generate an integrated
value and output the integrated value to the interface circuit,

wherein the control unit judges whether the electronic device is in a non-communicating state or in a communicating state
based upon the current value that corresponds to the battery current, and the interface circuit supplies the integrated value
to the processor only while in the communicating state; and

wherein the communicating state is a transmit period or receive period of the electronic device.

US Pat. No. 9,420,643

LED FLASH MODULE, LED MODULE, AND IMAGING DEVICE

ROHM CO. LTD., Kyoto (JP...

1. An LED flash module comprising:
a module substrate;
an energy device arranged on the module substrate, the energy device comprising at least two layers of layered structure in
which a positive electrode and a negative electrode of an active material electrode are alternately laminated so that a positive
electrode and a negative electrode of extraction electrodes portions are exposed, while inserting a separator through which
an electrolysis solution and ions can pass between the active material electrode portions of electrodes in which the positive
and negative active material electrodes and the positive and negative extraction electrodes are integrated;

an LED module arranged on the module substrate, the LED module in which a plurality of LED block units are arranged in a specific
direction, the LED block units in which a plurality of LED elements emitting light using a power source supplied from the
energy device are arranged in an orthogonal direction to the specific direction;

a charger circuit disposed on the module substrate, and charger circuit configured to charge the energy device; and
a control circuit disposed on the module substrate, the control circuit configured to control light emission from the LED
element, wherein

the LED flash module is structured such that, when plural rows of LED elements are arranged thereon, electrodes, selected
from the group consisting of anode electrodes and cathode electrodes, respectively formed on the LED elements of the adjacent
rows are arranged so as to be opposed to each other, and any one of anode wiring or cathode wiring formed on the module substrate
is common wiring;

a switch is provided for each LED element; and
the control circuit is structured to selectively light a desired LED element by individually controlling the switch of the
desired LED element.

US Pat. No. 9,305,685

CHIP RESISTOR AND MOUNTING STRUCTURE THEREOF

ROHM CO. LTD., Kyoto (JP...

1. A chip resistor comprising:
a resistor board including a resistor board obverse surface;
a first electrode;
a second electrode; and
an insulating layer,
wherein the second electrode is offset from the first electrode in a second direction opposite to a first direction perpendicular
to a thickness direction of the resistor board,

the resistor board obverse surface includes a first region in contact with the first electrode, a second region in contact
with the second electrode and an intermediate region in contact with the insulating layer,

the intermediate region is disposed between the first region and the second region in the first direction,
the first electrode includes a first underlying layer and a first plating layer,
the first underlying layer is disposed between the first plating layer and the insulating layer in the thickness direction,
and

the first underlying layer and the resistor board have side surfaces, respectively, that are parallel to the thickness direction
and flush with each other.

US Pat. No. 9,294,020

MOTOR DRIVING DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A motor driving device comprising:
a logic unit configured to control an electrical conduction of a motor;
a reference clock signal generating unit configured to generate a reference clock signal based on a rotational speed indication
signal;

a rotational speed signal generating unit configured to generate a rotational speed signal based on a rotational speed of
the motor; and

a rotational speed feedback control unit configured to receive the reference clock signal and the rotational speed signal
and control the logic unit so that the rotational speed of the motor reaches a target value,

wherein the rotational speed feedback control unit changes a feedback gain in response to the rotational speed signal,
wherein the rotational speed feedback control unit includes:
a FLL (Frequency Locked Loop) unit configured to generate a frequency error signal by comparing the reference clock signal
and the rotational speed signal;

a charge pump unit configured to increase or decrease an output voltage in response to the frequency error signal; and
an integral amplifier unit configured to generate a feedback signal by integrally amplifying the output voltage with a gain
which is varied based on the rotational speed signal, and

wherein the logic unit chops an electrical conduction signal with a duty cycle which is changed depending on the feedback
signal.

US Pat. No. 9,224,731

CHIP RESISTOR AND ELECTRONIC EQUIPMENT HAVING RESISTANCE CIRCUIT NETWORK

ROHM CO., LTD., Kyoto (J...

1. A chip resistor comprising:
a substrate;
a first connection electrode and a second connection electrode formed on the substrate; and
a resistor network formed on the substrate and having one end side connected to the first connection electrode and another
end side connected to the second connection electrode; and wherein

the resistor network includes
a plurality of resistor bodies arrayed in a matrix on the substrate and having an equal resistance value,
a plurality of types of resistance units each arranged from one or a plurality of the resistor bodies being connected electrically,
a network connection means connecting the plurality of types of resistance units in a predetermined mode, and
a plurality of fuse films respectively provided in correspondence to each individual resistance unit, the plurality of fuse
films electrically incorporating the corresponding resistance unit into the resistor network or being capable of being fused
to electrically separate the corresponding resistance unit from the resistor network.

US Pat. No. 9,351,372

LIGHTING DEVICE AND LIGHTING SYSTEM

Rohm Co., Ltd., Kyoto (J...

1. A lighting device comprising:
a light emission portion for emitting illumination light;
an information reception portion for receiving information from an adjacent lighting device;
a control signal reception portion operable to receive a control signal from a portable external remote control unit with
a limited reachable range; and

a control portion for controlling lighting state of the light emission portion according to the information received by the
information reception portion and according to the control signal received by the control signal reception portion,

wherein the control portion is arranged to turn on the light emission portion in response to the control signal within the
limited reachable range and received by the control signal reception portion, and to turn off the light emission portion in
response to the information received by the information reception portion, the information being indicative of a turn-on of
the adjacent lighting device in response to the portable external remote control unit which has been brought out of the limited
reachable range of the control signal reception portion and into the limited reachable range of the adjacent lighting device
instead.

US Pat. No. 9,347,618

LED LIGHTING APPARATUS WITH FIRST AND SECOND COVER PORTIONS

ROHM CO., LTD., Kyoto (J...

1. An LED lighting apparatus comprising:
a substrate including a first surface and a second surface opposite to the first surface;
a plurality of LED modules arranged on the first surface of the substrate and along a first direction parallel to the first
surface; and

a translucent cover configured to allow passage of light emitted from the LED modules;
wherein the translucent cover includes a first cover portion and a second cover portion, the first cover portion being elongated
in the first direction and facing the first surface of the substrate to cover the LED modules, the second cover portion being
connected to the first cover portion and extending in a second direction perpendicular to the first surface of the substrate,
and the second cover portion together with the first cover portion covers the LED modules.

US Pat. No. 9,281,391

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor layer;
an insulating layer formed selectively on the semiconductor layer;
a lower electrode, formed on the insulating layer, having an end portion at a position spaced apart by a predetermined distance
inward from a periphery of the insulating layer;

a dielectric film formed on the lower electrode;
an upper electrode, formed on the dielectric film, facing the lower electrode with the dielectric film interposed between
the upper electrode and the lower electrode; and

a passivation film, formed to cover the insulating layer, starting from the end portion of the lower electrode and extending
toward the periphery of the insulating layer, the passivation film including an insulating material having an etching selectivity
with respect to the insulating layer,

wherein the dielectric film extends over a corner portion between an upper surface of the lower electrode and a side surface
of the lower electrode and covers the side surface of the lower electrode, and wherein the dielectric film is integrated with
the passivation film at the end portion of the lower electrode.

US Pat. No. 9,261,543

POWER DETECTION DEVICE AND METHOD OF DRIVING THE SAME

ROHM CO., LTD., (JP)

1. A power detection device, comprising:
first and second power detection circuits configured to output first and second detection signals, respectively, each of the
first and second power detection circuits including:

a half-wave rectifier circuit having a transistor, and connected to an RF input terminal;
a ripple filter having a transistor and a capacitor, and configured to filter a rectified signal from the half-wave rectifier
circuit;

a transmission circuit having a pair of transistors, and connected to the half-wave rectifier circuit and the ripple filter,
the transmission circuit configured to transfer the rectified signal to the ripple filter; and

a constant current source having a transistor to supply a current to the half-wave rectifier circuit, the ripple filter, and
the transmission circuit,

wherein an input signal is input to the RF input terminal of the first power detection circuit, and an RF input terminal of
the second power detection circuit is grounded; and

a subtraction circuit configured to receive the first and second detection signals and to calculate a difference between the
first detection signal of the first power detection circuit and the second detection signal of the second power detection
circuit,

wherein a gate and a drain of the transistor of the half-wave rectifier circuit is shortcircuited and a source of the transistor
of the half-wave rectifier circuit is connected to the constant current source.

US Pat. No. 9,088,444

SIGNAL TRANSFER DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A signal-transferring device having:
a first circuit and a second circuit that operate on different ground references; and
a third circuit for transferring signals while providing insulation between the first circuit and the second circuit; wherein
the second circuit switches a logic level of an output signal in accordance with the logic level of an input signal notified
by the first circuit, and notifies the first circuit about the logic level of the output signal, and

the first circuit notifies the second circuit about the logic level of the input signal not only when the logic level of the
input signal has been switched, but also when the logic level of the output signal notified by the second circuit does not
match the logic level of the input signal.

US Pat. No. 9,226,350

OSCILLATION CIRCUIT

Rohm Co., Ltd., Kyoto (J...

1. An oscillation circuit comprising:
a ramp voltage generating unit configured to generate a ramp voltage; and
a clock signal generating unit configured to generate a clock signal,
wherein the clock signal generating unit includes:
a bias unit configured to apply one of the ramp voltage and a fixed voltage, as a bias voltage, to a resistor; and
an oscillator configured to determine an oscillation frequency of the clock signal in response to a bias current flowing through
the resistor,

wherein the ramp voltage generating unit includes:
a first current source configured to generate a charging current of a capacitor;
a second current source configured to generate a discharging current of the capacitor;
a hysteresis comparator configured to generate a comparison signal by comparing a voltage across the capacitor with a threshold
voltage; and

a charging/discharging control unit configured to switch between charging and discharging of the capacitor in response to
the comparison signal,

wherein the voltage across the capacitor is output as the ramp voltage,
wherein the bias unit applies a lower one of the ramp voltage and the fixed voltage, as the bias voltage, to the resistor,
and

wherein the ramp voltage generating unit includes a pull-up unit configured to make the ramp voltage higher than the fixed
voltage at the start of the oscillation circuit.

US Pat. No. 9,420,659

LED POWER SUPPLY DEVICE

Rohm Co., Ltd., Kyoto (J...

1. An LED lighting device comprising:
LED;
a detection voltage generation portion that generates a detection voltage according to an output current flowing in the LED;
a reference voltage generation portion that generates a reference voltage according to a dimming signal input from the outside
of the LED lighting device for adjusting the brightness of the LED;

an amplifier that generates a feedback signal according to a difference between the detection voltage and the reference voltage;
and

a driver that adjusts the output current according to the feedback signal, wherein
the higher the brightness of the LED according to the dimming signal is, the lower the reference voltage becomes, and
the lower the brightness of the LED according to the dimming signal is, the higher the reference voltage becomes.

US Pat. No. 9,232,579

DRIVING CIRCUIT FOR LIGHT-EMITTING ELEMENT WITH BURST DIMMING CONTROL

ROHM CO., LTD., (JP)

1. A driving circuit configured to supply a driving voltage and a driving current to a light-emitting element, the driving
circuit comprising:
a detection resistor arranged on a path of the light-emitting element;
a controller configured to generate a gate pulse signal having a duty ratio that is adjusted such that voltage drop across
the detection resistor matches a predetermined reference voltage, to receive a dimming control signal which indicates the
duty ratio of a burst dimming, and to generate a burst dimming pulse according to the dimming control signal;

a first driver configured to drive, according to the gate pulse signal, a switching power supply configured to generate the
driving voltage;

a second driver configured to switch the state according to the burst dimming pulse between a state in which a path of the
driving current is connected and a state in which the path of the driving current is disconnected; and

a duty ratio detection unit configured to control the frequency of the gate pulse signal according to the duty ratio indicated
by the dimming control signal;

wherein the dimming pulse signal is pulse modulated such that the frequency and the duty ratio thereof respectively indicate
the frequency and the duty ratio of the burst dimming operation,

and wherein the duty ratio detection unit comprises:
a capacitor arranged such that one end thereof is set to a fixed electric potential;
a first current source configured to charge the capacitor;
a second current source configured to be switchable between an on state and an off state according to the dimming control
signal, and to generate a current that is K times K represents a real number which is greater than 1) that of the first current
source in the on state so as to discharge the capacitor; and

a comparator configured to compare a voltage that develops at the capacitor with a predetermined threshold voltage.

US Pat. No. 9,171,962

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device having a nonvolatile memory cell selectively formed on a semiconductor substrate, comprising:
a gate insulating film disposed on the semiconductor substrate;
a floating gate selectively formed on the gate insulating film in a region for the nonvolatile memory cell;
a control gate disposed on the floating gate and having a side coplanar with a side of the floating gate;
a select gate selectively formed on the gate insulating film in the region for the nonvolatile memory cell and having a mono-layered
structure of a conductive film flush with the floating gate;

a tunnel diffusion layer facing a portion of the floating gate in the semiconductor substrate;
a tunnel window disposed in a portion of the gate insulating film between the floating gate and the tunnel diffusion layer,
the tunnel window configured to be thinner than a remaining peripheral portion of the gate insulating film;

a drain low concentration layer disposed in the semiconductor substrate, the drain low concentration layer self-aligned with
a first side of the select gate opposite to the tunnel diffusion layer;

a drain region disposed in the drain low concentration layer, the drain region self-aligned with a side wall covering the
first side of the select gate, the drain low concentration layer being widened to a region that is deeper than the drain region
and having an impurity concentration that is lower than that of the drain region; and

a tunnel low concentration layer disposed to overlap a portion of the tunnel diffusion layer in the semiconductor substrate,
the tunnel low concentration layer being self-aligned with a second side of the select gate facing the floating gate and a
side of the floating gate facing the select gate.

US Pat. No. 9,082,769

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor substrate;
a copper fuse;
a plurality of insulating layers, each of the plurality of insulating layers having a first via hole and a second via hole,
the first via hole and the second via hole being filled with a first conductive material and a second conductive material,
respectively, wherein one of the plurality of insulating layers is formed on an upper layer of the copper fuse;

a wiring layer formed on each of the plurality of insulating layers, the wiring layer having a first contact portion and a
second contact portion that are connected to the first conductive material and the second conductive material, respectively,
the wiring layer being made of a metallic layer that includes a metallic material other than copper;

first and second sealing layers disposed between the semiconductor substrate and the copper fuse, the first and second sealing
layers being made of copper, wherein at least one of the plurality of insulating layers is provided between the first and
second sealing layers so that the first and second sealing layers are apart from each other; and

a copper sealing member coupled to the first and second sealing layers and formed to have a container-like shape that surrounds
the copper fuse.

US Pat. No. 9,196,850

ORGANIC DEVICES, ORGANIC ELECTROLUMINESCENT DEVICES, ORGANIC SOLAR CELLS, ORGANIC FET STRUCTURES AND PRODUCTION METHOD OF ORGANIC DEVICES

Junji Kido, Yonezawa, Ya...

1. An organic device comprising in order:
a glass substrate;
an anode;
a hole transportation layer;
a light emission layer;
a layer including Alq and Liq with a molar ratio of 1:1;
a thermally reducible metal layer of aluminum;
a hole current-electron current conversion layer including an electron transportation section and a hole transportation section
in contact with each other; and

a cathode,
wherein said hole current-electron current conversion layer functions as a buffer layer against a high energy particle deposition
when said cathode is being formed, wherein said hole transportation section consists of NPD and vanadium pentoxide, and wherein
said hole transportation section is transparent to light and is in contact with the cathode, and

wherein the amount of aluminum in the thermally reducible metal layer is the amount needed to reduce all the lithium ions
in the Liq of the Liq/Alq layer to lithium metal, such that the thermally reducible metal layer consists of aluminum ions.

US Pat. No. 9,158,364

TOUCH PAD MODULE AND ELECTRONIC DEVICE USING THE SAME

ROHM CO., LTD., (JP)

1. A touch pad module comprising:
a touch pad having a touch surface configured to be touchable by a user;
a sensor group mounted on a mount surface of the touch pad in the opposite to the touch surface, the sensor group including
at least one of an acceleration sensor, a gyro sensor and a geomagnetic sensor;

a touch pad controller IC (Integrated Circuit) mounted on the mount surface of the touch pad and configured to control the
touch pad, the touch pad controller IC including a detector configured to generate digital data representing an electrical
state of the touch pad, a digital processor configured to generate coordinate data representing a coordinate touched by the
user based on the digital data, and a first interface configured to transmit data from the digital processor to the outside
of the touch pad controller IC; and

a microcontroller IC mounted on the mount surface of the touch pad, the microcontroller IC including a second interface connected
to the sensors included in the sensor group via a first bus, a third interface connected to the first interface of the touch
pad controller IC via a second bus, a fourth interface connected to a CPU (Central Processing Unit) via a third bus, and a
signal processor configured to control the sensor group through the second interface, acquire first data based on outputs
of the sensors, control the touch pad controller IC through the third interface, acquire second data representing the coordinate
touched by the user, and transmit the first data and the second data to the CPU via the fourth interface.

US Pat. No. 9,723,674

CURRENT DRIVER, LED DRIVE CIRCUIT, LIGHTING DEVICE AND ELECTRONIC APPARATUS

ROHM CO., LTD., Ukyo-Ku,...

1. A current driver which is connected with light emitting diode (LED) bars of the maximum number N of channels (N is an integer
of 2 or more) and drives LED bars of M channels (1?M?N) designated to be driven, comprising:
a PWM input terminal configured to receive an external dimming pulse subjected to pulse width modulation (PWM), the external
dimming pulse having a duty cycle according to a target light quantity common to the LED bars of the M channels;

a pulse measurement circuit configured to measure a period and a pulse width of the external dimming pulse and generate a
digital period data and a pulse width data;

an interface circuit which is connected to an external processor and is configured to receive (i) an enable data to designate
the LED bars of M channels to be driven and (ii) a phase difference setting data to designate one of a plurality of selectable
phase differences 360°/2, 360°/3, . . . , 360°/N;

a plurality of M current sources which correspond to the M channels to be driven and are respectively connected with corresponding
LED bars, and which are configured to be switched between On and Off in response to an internal dimming pulse; and

a pulse generator configured to generate M internal dimming pulses having a period represented by the period data, a pulse
width represented by the pulse width data, and a phase difference according to the phase difference setting data, and to distribute
the generated M internal dimming pulses to the M current sources.

US Pat. No. 9,385,217

SEMICONDUCTOR DEVICE HAVING SUPER JUNCTION METAL OXIDE SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD FOR THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A semiconductor device comprising:
a first base layer of a first conductivity type;
a drain layer of the first conductivity type formed on a back side surface of the first base layer;
a second base layer of a second conductivity type formed in a surface side of the first base layer;
a source layer of the first conductivity type formed in a surface side of the second base layer;
a gate insulating film disposed on a surface of both the source layer and the second base layer;
a gate electrode disposed on the gate insulating film;
a column layer of the second conductivity type formed in the first base layer below both the second base layer and the source
layer by opposing the drain layer, the column layer extending in a first direction vertical to a principal surface of the
drain layer, a length of the column layer in the first direction being larger than a length thereof in a second direction
that is parallel to the principal surface of the drain layer;

a drain electrode disposed in the drain layer; and
a source electrode disposed on both the source layer and the second base layer, wherein
a trap level is locally formed below the second base layer such that an attenuation peak position of a heavy particle irradiation
is included between a bottom surface of the column layer and a top surface of the drain layer, each of the column layer and
the first base layer having a portion of the trap level formed therein.

US Pat. No. 9,270,443

SERIAL DATA TRANSMISSION CIRCUIT AND RECEPTION CIRCUIT, TRANSMISSION SYSTEM USING THE SAME, ELECTRONIC DEVICE, AND SERIAL DATA TRANSMISSION METHOD

ROHM CO., LTD., (JP)

12. A method of transmitting serial data, comprising:
in a transmission circuit, scrambling first parallel data of information to be transmitted and applying a predetermined coding
scheme to generate D symbols having a clock signal embedded therein;

in the transmission circuit, alternately arranging a predetermined number of continuous D symbols and a K symbol, the K symbol
being a synchronization control code for the scrambling; and

in the transmission circuit, parallel-to-serial converting the D symbols and the K symbol into serial data and transmitting
the serial data to a reception circuit;

in the reception circuit, converting the serial data into second parallel data;
determining whether the second parallel data is the D symbol or the K symbol; and
in the reception circuit, (i) when the second parallel data is the D symbol, decoding and descrambling the second parallel
data, (ii) when the second parallel data is the K symbol, determining what the second parallel data is among the first to
third codes to synchronize the descrambling with the scrambling in the transmission circuit based on the determined code,
and

wherein, for each period of the scrambling, the transmission circuit arranges a plurality of the K symbols, the plurality
of the K symbols including,

a first code indicating a beginning of the period of the scrambling;
second codes each of which is allocated at an equal interval to the remaining K symbols other than that for the first code;
and

third codes allocated to the remaining K symbols other than those for the first code and the second codes.

US Pat. No. 9,261,545

CAPACITANCE VOLTAGE CONVERSION CIRCUIT, INPUT APPARATUS USING THE SAME, ELECTRONIC INSTRUMENT, AND CAPACITANCE VOLTAGE CONVERSION METHOD

ROHM CO., LTD., (JP)

1. A capacitance voltage conversion circuit which converts a capacitance of each of a plurality of sensor capacitors into
a voltage, the capacitance voltage conversion circuit comprising:
a plurality of capacitance current conversion circuits disposed in respective correspondence with the sensor capacitors, each
of the capacitance current conversion circuit configured to generate a detection current corresponding to a capacitance of
a corresponding sensor capacitor;

a current average circuit configured to average the detection currents, which are generated by the capacitance current conversion
circuits, to generate an average current; and

a plurality of current voltage conversion circuits disposed in respective correspondence with the sensor capacitors, each
of the current voltage conversion circuit configured to convert a difference current between a corresponding detection current
and the average current into a voltage,

wherein each current average circuit comprises:
a plurality of third transistors disposed on a path of the corresponding detection current, in respective correspondence to
the sensor capacitors, respective control terminals of the third transistors being connected to each other in common; and

a plurality of fourth transistors disposed in respective correspondence with the sensor capacitors, each fourth transistor
connected to a corresponding third transistor to form a current mirror circuit therewith,

wherein the current average circuit outputs a current, flowing in each of the fourth transistors, as the average current.

US Pat. No. 9,608,566

CHARGE PUMP CIRCUIT

Rohm Co., Ltd., Kyoto (J...

1. A charge pump circuit, comprising:
a clock generator configured to generate a clock signal whose frequency varies between a first frequency and a second frequency
lower than the first frequency;

a voltage raiser configured to generate a raised output voltage higher than a supplied input voltage by using the clock signal;
a switching device receiving at a control electrode thereof the raised output voltage, the switching device receiving at a
first principal electrode thereof first input supply power, the switching device yielding at a second principal electrode
thereof first output supply power; and

a clock generator controller configured to switch the frequency of the clock signal from the first frequency to the second
frequency when the raised output voltage reaches a predetermined value or when a load current through the first or second
principal electrode exceeds a predetermined value.

US Pat. No. 9,490,207

SEMICONDUCTOR DEVICE HAVING A COPPER WIRE WITHIN AN INTERLAYER DIELECTRIC FILM

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor layer;
an interlayer dielectric film formed on the semiconductor layer, the interlayer dielectric film having a wiring trench dug
in the interlayer dielectric film from an upper surface thereof;

a wire, which includes copper (Cu), formed on the interlayer dielectric film and configured to have a width of not more than
0.4 ?m;

a first barrier film, including a first material having a barrier property against diffusion of Cu, covering a side surface
and a bottom surface of the wiring trench;

a second barrier film, including a second material that is different from the first material and having a barrier property
against diffusion of Cu, covering a top surface of the wire and the upper surface of the interlayer dielectric film outside
of the wiring trench;

a plurality of broad portions integrally formed with the wire and configured to extend from the wire in the width direction
thereof, each of the plurality of broad portions extends toward only one side of the wire, the plurality of broad portions
being separated in a direction along the wire, and an interval between an adjacent pair of the plurality of broad portions
is not less than 100 ?m and not more than 300 ?m;

wherein each of the plurality of broad portions has a first side perpendicular to a side of the wire between the plurality
of broad portions, a second side parallel to the side of the wire between the plurality of broad portions, and a chamfering
corner connecting the first and second sides; and

wherein the wire and each of the plurality of broad portions are embedded in the wiring trench and face the side surface and
the bottom surface via the first barrier film.

US Pat. No. 9,224,915

SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING SAME, AND DISPLAY DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor light-emitting device comprising:
a semiconductor light-emitting element;
a first lead including a first main surface;
a plated layer covering a part of the first main surface; and
a resin package covering the semiconductor light-emitting element;
wherein the plated layer has a roughened portion, the first main surface and the resin package are held in contact with each
other,

the semiconductor light-emitting element is mounted on the roughened portion of the plated layer, and
the first main surface has an exposed portion uncovered by the plated layer, and the roughened portion of the plated layer
is higher in surface roughness than the exposed portion of the first main surface,

wherein the first lead having a first buried surface and a second buried surface corresponds to scrapped portions of the first
lead, wherein the first buried surface and the second buried surface are curved and covered by the resin package, and

wherein a bottom surface of the resin package is located opposite the first main surface, and the bottom surface is in contact
with ends of the first and second buried surfaces that are curved and a portion of the first lead located between the bottom
surface of the resin package and a top surface of a printed circuit board and the portion is exposed from the resin package.

US Pat. No. 9,244,102

COMPARATOR, OSCILLATOR USING THE SAME, DC/DC CONVERTER, CONTROL CIRCUIT THEREOF, AND ELECTRONIC APPARATUS

ROHM CO., LTD., (JP)

1. A comparator comparing a first input voltage and a second input voltage to generate a comparative output depending on a
result of the comparison, comprising:
a first input terminal configured to receive the first input voltage;
a second input terminal configured to receive the second input voltage;
a differential pair including a first input transistor whose control terminal is connected with the first input terminal and
a second input transistor whose control terminal is connected with the second input terminal;

a tail current source configured to supply a tail current to the differential pair; and
a load circuit connected to the first input transistor and the second input transistor,
wherein the tail current source increases the tail current, as the first input voltage approaches the second input voltage,
depending on the first input voltage, and

wherein the tail current source includes:
a first resistor provided between a first node and a fixed-voltage terminal, the first node being a common connection point
of the first input transistor and the second input transistor; and

a first variable current source configured to generate a current which increases as the first input voltage approaches the
second input voltage depending on the first input voltage, the first variable current source being provided in parallel with
the first resistor.

US Pat. No. 9,699,845

CONTROL CIRCUIT AND CONTROL METHOD FOR ILLUMINATION APPARATUS

ROHM CO., LTD., Kyoto (J...

1. A control circuit for an illumination apparatus, wherein the illumination apparatus comprises:
a switching converter that generates an output voltage at an output line thereof;
a plurality of light-emitting elements each having one end connected to the output line of the switching converter;
a plurality of current drivers that respectively correspond to the plurality of respective light-emitting elements, and each
of which is connected to the other end of a corresponding light-emitting element; and

the control circuit that controls the switching converter based on a plurality of first detection voltages each of which occurs
at the other end of the corresponding one of the plurality of light-emitting elements and a second detection voltage that
corresponds to the output voltage at the output line,

and wherein the control circuit comprises:
an error signal generating unit configured such that (i) in a calibration period, the error signal generating unit is set
to a first state in which a difference between a predetermined first reference voltage and a lowest from among the plurality
of first detection voltages is amplified so as to generate an error signal, and such that (ii) after the calibration period
ends, a difference between the second detection voltage and a second reference voltage is amplified so as to generate the
error signal;

a pulse modulator that generates a pulse signal according to the error signal;
a driver that drives the switching converter according to the pulse signal;
a dimming controller that generates a plurality of pulse modulated dimming pulses, so as to control on/off operations of the
plurality of current drivers according to the plurality of dimming pulses; and

a reference voltage setting unit that determines the second reference voltage according to a largest value of the second detection
voltage detected in the calibration period.

US Pat. No. 9,368,980

BATTERY CONTROL CIRCUIT

ROHM CO., LTD., (JP)

1. A battery control circuit mounted on a battery module, wherein the battery module comprises:
an anode terminal;
a cathode terminal;
a capacitor group comprising a plurality of capacitor cells connected in series between the anode terminal and the cathode
terminal;

a plurality of tap electrodes each provided to a corresponding connection node that connects the adjacent capacitor cells;
and

an intermediate terminal connected to one from among the plurality of tap electrodes, and
wherein the battery module is structured to output battery voltages having different voltage levels via the anode terminal
and the intermediate terminal, and

wherein the battery control circuit comprises:
a cell balance circuit configured to stabilize voltages at the plurality of tap electrodes to their respective target voltage
levels; and

a selector having its output terminal connected to a power supply terminal of the cell balance circuit, its first input terminal
supplied with an input voltage of a charger circuit configured to charge the battery module, and its second input terminal
supplied with the voltage at the anode terminal, wherein the cell balance circuit comprises:

a reference voltage circuit configured to divide a voltage between the anode terminal and the cathode terminal, so as to generate
a plurality of reference voltages which determine the respective target voltage levels for the plurality of tap electrodes;
and

a plurality of regulators respectively provided to the tap electrodes, and each having its input terminal supplied with corresponding
one from among the plurality of reference voltages, and its output terminal connected to corresponding one from among the
plurality of tap electrodes, and

wherein the selector has its output terminal connected to the high voltage side power supply terminal of each of the plurality
of regulators.

US Pat. No. 9,267,940

DISC-LIKE ASSAY CHIP

Rohm Co., Ltd., Kyoto (J...

1. A disc-like assay chip, comprising an internal space, wherein a centrifugal force is applied to move a liquid existing
in the internal space to a desired position in the internal space, and
the internal space comprises:
a first groove, used for accommodating a first liquid;
a second groove, used for accommodating a second liquid;
a third groove, used for accommodating a third liquid;
a fourth groove, used for accommodating a fourth liquid;
a fifth groove, disposed at a side closer to a peripheral portion of the assay chip than the first groove, the second groove,
the third groove and the fourth groove;

a sixth groove, disposed at a side closer to the peripheral portion of the assay chip than the fifth groove;
a first flow path, for connecting the first groove and the fifth groove;
a second flow path, for connecting the second groove and the fifth groove;
a third flow path, for connecting the third groove and the fifth groove;
a fourth flow path, for connecting the fourth groove and the fifth groove; and
a fifth flow path, for connecting the fifth groove and the sixth groove;
wherein a transversal cross-sectional area of the first flow path and that of the second flow path are greater than that of
a transversal cross-sectional area fifth flow path, a transversal cross-sectional area of the fifth flow path is greater than
that of the third flow path, and a transversal cross-sectional area of the third flow path is greater than that of the fourth
flow path.

US Pat. No. 9,265,123

CONTROLLING BRIGHTNESS OF LAMP IN DISPLAY DEVICE

ROHM CO., LTD., (JP)

1. A display device, comprising:
a lamp unit;
a dimming signal controller that receives a lamp brightness signal and an external environment illumination signal, selects
the lamp brightness signal or a signal based on the received external environment illumination signal, and outputs the selected
signal as a dimming signal; and

an inverter device operating to control brightness of the lamp unit based on the dimming signal,
wherein the dimming signal controller comprises:
a reference value comparing unit that compares the lamp brightness signal and a reference value;
a dimming signal value determining unit that outputs either the lamp brightness signal or the signal based on comparison by
the reference value comparing unit; and

a path selecting unit that selects one of the lamp brightness signal and the signal based on the external environment illumination
signal,

wherein the reference value comparing unit comprises:
an input terminal that receives the lamp brightness signal;
a diode, wherein an anode of the diode is connected to the input terminal;
an RC integrator connected to a cathode of the diode;
a reference value capacitor that stores the reference value; and
a comparator that compares a signal received from the RC integrator and a signal received from the reference value capacitor,
wherein the comparator outputs a comparison result signal, and wherein when the signal received from the RC integrator is
greater than or equal to the signal received from the reference value capacitor, the comparison result signal is an OFF level
and when the signal received from the RC integrator is smaller than the signal received from the reference value capacitor,
the comparison result signal is an ON level.

US Pat. No. 9,281,444

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

ROHM CO., LTD., Kyoto (J...

1. A light emitting device comprising:
a substrate;
a convex pattern including a collection of a plurality of convex portions discretely arranged on a front surface of the substrate
with a first pitch;

a n type nitride semiconductor layer formed on the front surface of the substrate to cover the convex pattern;
a light emitting layer formed on the n type semiconductor layer, the substrate being transparent to an emission wavelength
of the light emitting layer and positioned to receive light from the light emitting layer;

a p type nitride semiconductor layer formed on the light emitting layer;
a recess extending through at least the p type nitride semiconductor layer and the light emitting layer, the recess exposing
an exposed portion of the n type nitride semiconductor layer;

a p side electrode that is electrically connected to the p type nitride semiconductor layer, the p side electrode including:
a first p side electrode portion; and
a second p side electrode portion connected to the first p side electrode portion and extending in a longitudinal direction
of the substrate; and

a n side electrode formed on the exposed portion of the n type nitride semiconductor layer, the n side electrode including:
a first n side electrode portion located opposite the first p side electrode portion in the longitudinal direction of the
substrate; and

a second n side electrode portion extending from the first n side electrode portion in the longitudinal direction of the substrate
and parallel to the second p side electrode portion,

wherein the convex pattern further includes, for each of the convex portions, a sub convex pattern comprising a plurality
of fine convex portions discretely arranged at the top of the respective convex portion with a second pitch, and a base supporting
the sub convex pattern, the second pitch being smaller than the first pitch, and

wherein the n type nitride semiconductor layer spans between tops of the fine convex portions without filling spaces between
adjacent fine convex portions, and the light emitting device includes spaces partitioned by the fine convex portions and the
n type nitride semiconductor layer spanning between the tops of the fine convex portions.

US Pat. No. 9,248,663

THERMAL PRINT HEAD AND THERMAL PRINTER

ROHM CO., LTD., Kyoto (J...

1. A thermal print head comprising:
a base member including a recess;
a heat storage region formed in the recess;
a resistor layer formed on the base member; and
an electrode layer formed on the base member and electrically connected to the resistor layer;
wherein the resistor layer includes a heating portion spanned between two portions of the electrode layer spaced from each
other as viewed in a thickness direction of the base member, the heating portion is located so as to overlap the recess as
viewed in the thickness direction, and the base member is made of a material having a thermal conductivity of 100 to 300 W/(m·K).

US Pat. No. 9,431,960

SOLUTION TESTING EQUIPMENT

ROHM CO., LTD., Kyoto (J...

1. A solution testing equipment, comprising:
a terahertz (THz) oscillation device configured to radiate a THz wave;
a THz detection device configured to receive the THz wave;
an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation
device;

a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film;
and

a glass plate disposed at an upper side of the insulating film, wherein
the solution is disposed on the THz oscillation device by interposing the glass plate therebetween, and
the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity
of the solution.

US Pat. No. 9,236,461

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor layer having a trench formed therein;
a field-effect transistor structure formed adjacent to said trench, said field-effect transistor structure having an emitter
region and a drain region that face each other in a depth direction of the trench across a base region;

a floating region formed on a side of the trench opposite to the field-effect transistor;
an insulating film formed on an inner surface of the trench; and
a trench gate and an emitter connecting part provided in the trench and insulated from each other in said trench, said emitter
connecting part being electrically connected to the emitter region,

wherein the trench gate faces the field-effect transistor structure across the insulating film,
wherein the emitter connecting part faces the floating region across the insulating film,
wherein the semiconductor device further comprises:
a second trench formed in the semiconductor layer, said second trench reaching at least the floating region; and
a second emitter connecting part disposed in the second trench across an insulating film, said second emitter connecting part
being electrically connected to the emitter region,

wherein the second trench is formed at a same width as the trench, and
wherein the second emitter connecting part further comprises a pair of connectors that are insulated from each other in the
second trench.

US Pat. No. 9,358,804

FINE WIRING PATTERN, MANUFACTURING METHOD THEREOF, AND THERMAL PRINT HEAD

Rohm Co., Ltd., Kyoto (J...

1. A manufacturing method of a wiring pattern, comprising:
preparing a support member;
forming a glaze layer with a thermal effect on the support member;
forming a first layer on the support member and the glaze layer;
forming a second layer including silver on the first layer;
forming a predetermined wiring pattern by performing an etching process on the first layer and the second layer, and
bonding a wire to the second layer.

US Pat. No. 9,277,083

IMAGE SENSOR MODULE FOR IMAGE READING APPARATUS WITH IMPROVED READING FLEXIBILITY

Rohm Co., Ltd., Kyoto (J...

1. An image sensor module for reading a hologram, comprising:
a sensor IC (Integrated Circuit) having a plurality of light receivers arranged along a main scanning direction;
a lens unit configured to form an image on the sensor IC with light transferred from a read target, arranged at one end of
the image sensor module in a sub-scanning direction perpendicular to the main scanning direction;

a first light source unit having a first output surface extending along the main scanning direction and outputting a first
linear light extending along the main scanning direction from the first output surface toward the read target and being reflected
to the lens unit from the read target, the first output surface being placed at a position spaced apart from the lens unit
in the sub-scanning direction; and

a second light source unit having a second output surface extending along the main scanning direction and outputting a second
linear light extending along the main scanning direction from the second output surface toward the read target and being reflected
to the lens unit from the read target, the second output surface being placed between the lens unit and the first output surface
in the sub-scanning direction,

wherein the first output surface, the second output surface, and the lens unit are arranged in the same case to overlap in
the sub-scanning direction,

wherein the first and second light source units are arranged opposite from the lens unit arranged at the one end of the image
sensor module in the sub-scanning direction, and emit light in different angles to the read target with respect to the lens
unit, and

wherein the first and second light source units are arranged to overlap each other in the sub-scanning direction and arranged
at different heights in a thickness direction perpendicular to the main scanning direction and the sub-scanning direction.

US Pat. No. 9,263,193

SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A solid electrolytic capacitor comprising:
a capacitor chip including a porous sintered body having a first surface, a second surface, and a third surface interposed
between the first and second surfaces;

a resin package covering the capacitor chip, and having a first lateral surface parallel to the first surface, and a second
lateral surface parallel to the second surface and perpendicular to the first lateral surface; and

an anode wire projecting from the third surface and extending in a first direction, and connected to the porous sintered body,
one end portion of the anode wire in the first direction being exposed from the resin package.

US Pat. No. 9,177,728

SOLID ELECTROLYTIC CAPACITOR, AND METHOD OF MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A method of manufacturing a solid electrolytic capacitor, the method comprising:
forming a porous sintered body made of a valve metal and having an anode wire sticking out therefrom;
forming an insulating layer made of a fluorine resin, so as to surround the anode wire;
forming a dielectric layer on the porous sintered body; and
forming a solid electrolyte layer on the dielectric layer, after forming the insulating layer;
wherein the process of forming the insulating layer includes melting a resin material made of a fluorine resin.

US Pat. No. 9,276,187

SEMICONDUCTOR LIGHT EMITTING DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A semiconductor light emitting device, comprising:
an LED chip;
a case on which the LED chip is mounted,
wherein the LED chip comprises an n-type semiconductor layer, a p-type semiconductor layer, an anode electrode electrically
connected to the p-type semiconductor layer, and an cathode electrode electrically connected to the n-type semiconductor layer,
and the anode electrode and the cathode electrode facing the case when the LED chip is mounted on the case, and

wherein the case comprises a base member including a front surface and a rear surface, a front surface layer including an
anode pad and a cathode pad which are formed at the front surface; a rear surface layer including an anode mounting electrode
and a cathode mounting electrode which are formed at the rear surface, and a reflective resin inclined to be receded from
the front surface; and

a bypass function element preventing a reverse overvoltage from being applied to the LED chip, and the reflective resin covers
at least a portion of the bypass function element.

US Pat. No. 9,271,365

LED POWER SUPPLY DEVICE

Rohm Co., Ltd., Kyoto (J...

1. An LED power supply device comprising a DC dimmer circuit that performs dimming control of an LED such that the higher
a reference voltage variably controlled according to a dimming signal is, the smaller an output current flowing in the LED
is,
wherein the DC dimmer circuit controls the output current such that a detection voltage having a voltage value that becomes
higher according as the output current is smaller is equal to the reference voltage,

wherein the DC dimmer circuit includes:
a current monitor that monitors the output current to generate a feedback signal;
a driver that performs constant current control of the output current according to the feedback signal; and
a microcomputer that generates the dimming signal, and
wherein the current monitor includes:
a current DAC that converts the dimming signal which is PWM-driven into a dimming current having an analog value;
a detection voltage generation portion that generates the detection voltage according to the output current;
a reference voltage generation portion that generates the reference voltage according to the dimming current; and
an operational amplifier that generates the feedback signal in response to input of the detection voltage and the reference
voltage thereto.

US Pat. No. 9,374,083

SWITCHING CURRENT CONTROL CIRCUIT, LED DIMMER SYSTEM, AND LED ILLUMINATION DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A switching current control comprising:
a DC power supply;
a light emitting diode having an anode is connected to the DC power supply;
an inductor having one end connected to a cathode of the light emitting diode;
a diode having an anode connected to another end of the inductor and a cathode connected to an anode of the light emitting
diode;

a switching element having one end connected to a cathode of the diode;
a current sensing resistor having one end connected to another end of the switching element and another end is grounded;
an RS flip-flop configured to generate a signal indicating an ON/OFF period of the switching element;
a frequency counter configured to input a clock signal of predetermined frequency and then count the input clock signal to
be output as a counted value;

a frequency setting circuit where a particular switching frequency value is held;
a first comparator circuit configured to compare the counted value from the frequency counter and the switching frequency
value, and then output a set signal to the RS flip-flop when the counted value reaches the switching frequency value;

a second comparator circuit configured to detect a current flowing through the current sensing resistor during an ON period
of the switching element, and then compare the detected current with a peak current value, the second comparator circuit further
configured to output a reset signal to the RS flip-flop when the detected current reaches the peak current value;

an A/D conversion circuit configured to detect the current flowing through the current sensing resistor during the ON period
of the switching element, and then convert the detected current into digital data; and

an arithmetic control means for calculating a lower limit of the detected current for providing a timing of switching the
switching element from OFF to ON based on data of at least two points of the detected current output from the A/D conversion
circuit, wherein

the arithmetic control means calculates the lower limit using the following equation:
Y0=((y0+y 1)/2)-(y1-y0)=(3y0-y1)/2,

where Y0 is the lower limit; and y0 and y1 are respectively the currents flowing through the current sensing resistor in time points t0 and t1 during the ON period of the switching element, wherein

the arithmetic control means determines whether it is in a discontinuous mode on the basis of the lower limit of the detected
current calculated by the arithmetic control means, and then determines that it is in the discontinuous mode when the lower
limit of the detected current is a negative value, wherein

the arithmetic control means increases a frequency of the switching element by changing the switching frequency value held
in the frequency setting circuit when determining that it is in the discontinuous mode.

US Pat. No. 9,324,677

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto-Sh...

1. A method for manufacturing a semiconductor device, the method comprising the steps of:
forming a plurality of terminals on a base;
placing a semiconductor element so as to overlap the plurality of terminals when viewed in a thickness direction of the base;
sealing the plurality of terminals and the semiconductor element with a resin; and
removing the base,
wherein the semiconductor element has a plurality of electrodes,
the step of placing the semiconductor element includes the step of forming a conductive connection member that contacts a
first electrode, which first electrode comprises one of the plurality of electrodes, and a first terminal, which first terminal
comprises one of the plurality of terminals, and

the conductive connection member including:
a columnar member that contacts both the first electrode and the first terminal, and
a fixing member that surrounds the columnar member and spreads on a surface of the first terminal,
wherein the method further comprises the steps of:
placing the fixing member on the first terminal; and
causing the columnar member to move through the fixing member until contacting with the first terminal, wherein the fixing
member is melted for this step, thereby causing the melted fixing member to move up along a side face of the columnar member.

US Pat. No. 9,306,556

ANALOG-SWITCH CIRCUIT AND MOTOR DRIVE APPARATUS USING SAME

Rohm Co., Ltd., Kyoto (J...

1. An analog switch circuit comprising:
a first resistor having a first end and a second end, the first end being connected to an input terminal to which an input
voltage is applied;

a first analog switch of CMOS type having a first terminal and a second terminal, the first terminal being connected to the
second end of the first resistor and the second terminal being connected to an output terminal, wherein the first analog switch
is turned on/off by a control voltage defined between a high control voltage and a low control voltage; and

a second analog switch of CMOS type having a first terminal and a second terminal, the first terminal of the second analog
switch being connected to the second end of the first resistor and the second terminal of the second analog switch being connected
to a ground terminal,

wherein the second analog switch is turned on when the first analog switch is turned off and the input voltage of the input
terminal is lower than the low control voltage or higher than the high control voltage.

US Pat. No. 9,159,757

PHOTODETECTION DEVICE AND SENSOR PACKAGE

Rohm Co., Ltd., Kyoto (J...

1. A photodetection device comprising:
a semiconductor substrate having a first light-receiving portion and a second light-receiving portion; and
an optical filter formed on the semiconductor substrate, the optical filter including a first filter covering the first light-receiving
portion and a second filter covering the second light-receiving portion, wherein

the first filter is permeable allowing an optic element within a first wavelength band to pass through the same, the second
filter is permeable allowing an optic element within a second wavelength band different from the first wavelength band, to
pass through the same, and

the optical filter has a filter laminated structure which is defined such that edge portions of the first filter and the second
filter overlap one another on a boundary region between the first light-receiving portion and the second light-receiving portion.

US Pat. No. 9,379,047

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a resin package;
a semiconductor chip sealed in the resin package, and having first and second pads on a front surface;
an island with projecting terminal sealed in the resin package, to one surface of which a back surface of the semiconductor
chip is bonded, and the other surface of which is partially exposed from a bottom surface of the resin package as a first
terminal; and

a lead formed separately from the island with the projecting terminal, sealed in the resin package, one surface of which is
connected with the second pad electrically, and the other surface of which is exposed from the bottom surface of the resin
package as a second terminal capable of electrical connection between the second pad and outside, wherein

a center of mass of the semiconductor chip is away from a center of the resin package, the projecting terminal is as large
as the lead, and solder to be formed.

US Pat. No. 9,397,037

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
semiconductor elements;
a lead including a plurality of island portions on which the semiconductor elements are mounted;
a common heat dissipation member for dissipating heat from each of the island portions, the common heat dissipation member
having a common continuous flat surface;

a bonding layer bonding the common continuous flat surface of the common heat dissipation member to each of the island portions;
and

a sealing resin covering the semiconductor elements, the island portions and a part of the common heat dissipation member;
wherein the bonding layer includes individual regions provided for the island portions, respectively, the individual regions
being spaced apart from each other on the common continuous flat surface,

the sealing resin fills a space formed between adjacent ones of the individual regions, thereby being held in direct contact
with the common continuous flat surface, and

the bonding layer is formed of an adhesive made of a resin, the bonding layer being held in direct contact with the common
heat dissipation member.

US Pat. No. 9,277,612

SWITCHING CONVERTER, CONTROL CIRCUIT AND CONTROL METHOD THEREOF, AND LIGHTING DEVICE AND ELECTRONIC APPARATUS USING THE SAME

ROHM CO., LTD., (JP)

1. A control circuit of a flyback type switching converter including:
a transformer having a primary coil and a secondary coil;
a switching transistor connected to the primary coil; and
a detection resistor arranged on a path of a current flowing through the switching transistor in an ON period of the switching
transistor, the control circuit comprising:

a current detection comparator configured to compare a detection voltage corresponding to a voltage drop of the detection
resistor with a reference voltage and generate a peak current detection signal asserted when the detection voltage reaches
the reference voltage;

a driving logic unit configured to generate a pulse signal indicating a turn-on/off operation of the switching transistor
and change the pulse signal to an OFF level indicating the turn-off operation of the switching transistor when the peak current
detection signal is asserted;

a driver configured to drive the switching transistor based on the pulse signal; and
a reference voltage setting unit configured to measure time (TRECT) for which a current flows through the secondary coil and a switching period (T) of the switching transistor and adjust the
reference voltage (VREF) according to an equation: VREF=K×T/TRECT where K is a coefficient.

US Pat. No. 9,088,133

TWO-DIMENSIONAL PHOTONIC CRYSTAL SURFACE EMITTING LASER

KYOTO UNIVERSITY, Kyoto ...

1. A two-dimensional photonic crystal surface emitting laser having a laminated structure comprising:
a) an active layer for generating light within a predetermined wavelength range by receiving an injection of an electric current;
and

b) a two-dimensional photonic crystal layer made of a two-dimensional photonic crystal having a plate-shaped base member in
which modified refractive index areas whose refractive index differs from that of the base member are arranged, wherein the
two-dimensional photonic crystal layer includes:

b-1) a light-resonating photonic crystal structure with modified refractive index areas located at lattice points of a light-resonating
lattice whose periodicity is determined so that a resonant state of light of emission wavelength ? which is a wavelength within
the aforementioned wavelength range is created by forming a two-dimensional standing wave while the light of emission wavelength
? is prevented from being emitted to an outside; and

b-2) a light-emitting photonic crystal structure with modified refractive index areas located at lattice points of a lattice
having a reciprocal lattice vector G?? in a reciprocal space, where a magnitude of a sum of the reciprocal lattice vector
G?? and a wave vector k? corresponding to the emission wavelength ? within the light-resonating photonic crystal structure
is greater than zero and less than (|k?|/neff).

US Pat. No. 9,780,594

DISCHARGE CIRCUIT AND POWER SUPPLY DEVICE THEREWITH

Rohm Co., Ltd., Kyoto (J...

1. A discharge circuit comprising:
a voltage divider arranged to divide an alternating-current input voltage to produce a divided voltage;
a high-pass filter arranged to pass a high-frequency component of the divided voltage to produce a monitoring voltage;
a comparator arranged to compare the monitoring voltage with a threshold voltage to produce a comparison signal;
a timer arranged to generate a timer signal indicating whether or not the comparison signal has been kept at a same logic
level for a mask period;

a controller arranged to generate a discharge control signal according to the timer signal; and
a discharger arranged to discharge, according to the discharge control signal, an X capacitor connected to a node to which
the alternating-current input voltage is applied,

wherein the voltage divider includes:
a first resistor connected between a node to which the alternating-current input voltage is applied and a node to which the
divided voltage is applied; and

a second resistor connected between the node to which the divided voltage is applied and a ground node, and
wherein the high-pass filter includes:
a first capacitor connected between the node to which the divided voltage is applied and a node to which the monitoring voltage
is applied; and

a third resistor connected between the node to which the monitoring voltage is applied and the ground node,
wherein the resistance of the third resistor is lower than the resistance of the second resistor,
wherein a magnitude of an alternating-current component of the divided voltage is determined by a ratio of a resistance of
the first resistor to a combined resistance of the second and third resistors, the alternating-current component being fed
to the comparator via the first capacitor, and

wherein a magnitude of a direct-current component of the divided voltage is determined by a ratio of the resistance of the
first resistor to the resistance of the second resistor irrespective of the third resistor, the direct-current component passing
to the ground node via the first and second resistors and being isolated from the comparator by the first capacitor.

US Pat. No. 9,496,622

PHOTONIC-CRYSTAL SLAB ABSORBER AND HIGH-FREQUENCY CIRCUIT AND ELECTRONIC COMPONENTS, AND TRANSMITTER, RECEIVER AND PROXIMITY WIRELESS COMMUNICATION SYSTEM

ROHM CO., LTD., Kyoto (J...

1. A photonic-crystal slab absorber comprising:
a two dimensional photonic crystal slab composed of semiconducting materials; and
a plurality of lattice points periodically arranged in the two dimensional photonic crystal slab, each lattice point for forming
resonant-state which can capture an electromagnetic wave incident from an outside by resonating an electromagnetic wave in
a band edge of a photonic band structure of the two dimensional photonic crystal slab in the plane of the two dimensional
photonic crystal slab, wherein

the two dimensional photonic crystal slab is doped with impurities and can absorb the captured electromagnetic wave in the
band edge resonant frequency, wherein

an amount of impurities doping level of a surface portion of the two dimensional photonic crystal slab is higher than an amount
of the impurities doping level of a portion of the two dimensional photonic crystal slab other than the surface portion.

US Pat. No. 9,437,592

SWITCHING DEVICE

ROHM CO., LTD., Kyoto (J...

1. A switching device for switching a load by on-off control of voltage, comprising:
an SiC semiconductor layer where a current path is formed by on-control of the voltage;
a first electrode arranged to be in contact with the SiC semiconductor layer; and
a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due
to the formation of the current path, wherein

the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed
high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent
flows to the current path, and

the variable resistance portion includes a high-resistance portion where a rate of increase of the resistance value under
the prescribed high-temperature condition is relatively high and a low-resistance portion where the rate of increase is lower
than that in the high-resistance portion.

US Pat. No. 9,779,776

OPTICAL DISK REPRODUCING DEVICE, REPRODUCING CIRCUIT OF THE SAME, AND REPRODUCING METHOD OF OPTICAL DISK

ROHM CO., LTD., Ukyo-Ku,...

1. A reproducing method of an optical disk, comprising:
a main sequence (A); and
a subsequence (B);
wherein the main sequence (A) includes:
a step (A-1) that acquires a current frame number and judges a current frame as normal if the frame number is continuous with
a last frame number judged as normal, and otherwise judges the current frame as abnormal;

a step (A-2) in which, moving to a next frame and returning to the step (A-1) when the current frame is judged as normal in
the step (A-1), and an audio data of the current frame is set as a reproduction object; and

a step (A-3) in which, shifting to the subsequence when the current frame is judged as abnormal in the step (A-1);
the subsequence (B) including:
a step (B-1) that temporarily holds audio data of current frame;
a step (B-2) that moves to next frame and acquires current frame number;
a step (B-3) that judges whether or not current frame number matches an expected value;
a step (B-4) in which, moving to next frame and returning to the step (A-1) of the main sequence when current frame number
matches the expected value in the step (B-3), and the temporarily held audio data is set as reproduction object;

a step (B-5) in which, returning to the step (B-1) when current frame number does not match the expected value in the step
(B-3) and a number of repetitions of the subsequence is equal to or less than a predetermined allowable number of times N
(N is a natural number); and

a step (B-6) in which, moving to last frame judged as normal and returning to the step (A-1) of the main sequence when current
frame number does not match the expected value in the step (B-3) and number of repetitions of the subsequence exceeds the
allowable number of times N.

US Pat. No. 9,159,846

SIC SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A SiC semiconductor device, comprising:
a SiC semiconductor layer having a first-conductivity-type impurity;
a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing
therethrough the front surface of the SiC semiconductor layer;

an electrode connected to the SiC semiconductor layer through the opening of the field insulation film; and
a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor
layer to make contact with an outer edge portion of the electrode within the opening, the second-conductivity-type impurity
in a surface layer portion of the guard ring making contact with the electrode having a smaller impurity concentration than
the first-conductivity-type impurity;

wherein a boundary portion of the electrode overlaps with the guard ring in a plan view.

US Pat. No. 9,489,972

LIGHT SOURCE UNIT, HEAT-ASSISTED MAGNETIC RECORDING HEAD USING THE SAME, AND LIGHT SOURCE FOR LIGHT SOURCE UNIT

SAE MAGNETICS (H.K.) LTD....

1. A light source unit comprising:
a substrate;
a light source that is mounted to the substrate, wherein the light source includes;
a first emission part that emits a forward light, the forward light being a laser light in an oscillation state,
a second emission part that is located on a side opposite to the first emission part and that emits a rearward light, the
rearward light being a laser light in an oscillation state, and

a light leakage part located at a position different from the first emission part and the second emission part; and
a photodetector that is provided on the substrate, wherein the photodetector has a light receiving surface for detecting a
leakage light that leaks from the light leakage part.

US Pat. No. 9,761,506

SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a mounting substrate;
a plurality of semiconductor chips disposed on the mounting substrate, each semiconductor chip comprising a semiconductor
substrate, a source pad electrode and a gate pad electrode disposed on a surface of the semiconductor substrate, and a drain
pad electrode disposed on a back side surface of the semiconductor substrate that contacts the mounting substrate;

a source connector disposed so as to commonly connect a plurality of the source pad electrodes, the source connector disposed
on a surface of each of the source pad electrodes on an opposite side to the mounting substrate;

a gate connector disposed so as to commonly connect a plurality of the gate pad electrodes, the gate connector disposed on
a surface of each of the gate pad electrodes on an opposite side to the mounting substrate, the gate connector being a connector
separated from the source connector,

a plurality of interlayer metals, respective interlayer metals being inserted between respective semiconductor chips and the
mounting substrate; and

an intermediate member including openings configured to hold the plurality of semiconductor chips and the plurality of interlayer
metals, respective openings being formed so as to hold respective pairs of a semiconductor chip of the plurality of semiconductor
chips and an interlayer metal of the plurality of interlayer metal, the intermediate member disposed on the mounting substrate,

wherein a plurality of the drain pad electrodes are bonded to the mounting substrate by solid phase diffusion bonding;
wherein the source connector includes a plurality of convex regions, the source connector is disposed on the plurality of
the source pad electrodes so that the respective convex regions of the source connector are opposed to the respective source
pad electrodes, and

the gate connector includes a plurality of convex regions, the gate connector is disposed on the plurality of the gate pad
electrodes so that the respective convex regions of the gate connector are opposed to the respective gate pad electrodes.

US Pat. No. 9,333,914

LED SHORT-CIRCUIT DETECTION CIRCUIT, LED DRIVE DEVICE, LED LIGHTING DEVICE, AND VEHICLE

Rohm Co., Ltd., Kyoto (J...

1. An LED short-circuit detection circuit comprising:
a differential circuit outputting a differential voltage indicating a difference of a first voltage and a second voltage,
the first voltage being obtained by a connection point of voltage between a first light emitting diode and a second light
emitting diode of an LED chip line formed by connecting a plurality of light emitting diodes in series with each other, and
the second voltage being obtained by dividing a forward drop voltage of the LED chip line; and

a detection circuit to receive the differential voltage and determine whether the differential voltage falls in a predetermined
range,

wherein, if the differential voltage does not fall in the predetermined range, the detection circuit detects a short-circuit
between one anode of the LED chip line and other anode of the LED chip line, or a short-circuit between an anode of one light
emitting diode in the LED chip line and a cathode of the one light emitting diode, and outputs an LED short-circuit detection
signal.

US Pat. No. 9,496,811

DRIVING DEVICE AND DRIVING METHOD FOR MOTOR, COOLING DEVICE AND ELECTRONIC MACHINE

ROHM CO. LTD., Kyoto (JP...

1. A driving device for a brushless direct current motor, comprising:
a driving signal generation portion, generating a pulse-modulated control pulse signal at each phase;
a driver, generating, at each phase, a driving voltage with duty cycle corresponding to the control pulse signal, the driving
voltage being inserted with specific idle time, and applying the driving voltage to a coil of each phase; and

a current phase detection portion, generating a current phase detection signal indicating a phase of current flowing in the
coil at a specific phase corresponding to the control pulse signal, according to a pulse width of a terminal voltage of a
terminal of the coil at the specific phase.

US Pat. No. 9,400,300

ELECTRIC CIRCUIT EVALUATION METHOD

ROHM CO., LTD., Kyoto (J...

1. An electric circuit evaluation method comprising the following steps:
a step for finding a malfunction power frequency property, in which the magnitude of a critical noise signal at which a designated
electric circuit causes a malfunction is represented by the power injected into the designated electric circuit; and

a step for finding a malfunction current frequency property, in which the magnitude of the critical noise signal at which
the designated electric circuit causes a malfunction is represented by a current flowing to a predetermined portion of the
designated electric circuit, and a malfunction voltage frequency property, in which the magnitude of the critical noise signal
at which the designated electric circuit causes a malfunction is represented by a voltage occurring between predetermined
points of the designated electric circuit, both of which properties being found from the malfunction power frequency property.

US Pat. No. 9,257,548

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

ROHM CO., LTD., Kyoto (J...

1. A nitride semiconductor element, comprising:
a Si substrate;
a buffer layer comprising:
(a) an AlN layer formed on a primary surface of the Si substrate; and
(b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging
from 100 nm to 500 nm;

a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided
that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and

an AlGaN electron supply layer formed on the GaN electron transfer layer,
wherein the AlGaN deposit layer includes:
an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%; and
a reference AlGaN layer that has an Al component (%) that is 20% or more but less than that of the AlGaN layer that is provided
closer to the AlN layer.

US Pat. No. 9,095,035

DISPLAY DEVICE, INVERTER APPARATUS AND METHOD OF DRIVING LAMPS

ROHM CO., LTD., (JP)

1. An inverter apparatus configured to individually supply an operation voltage to first and second lamp groups included in
a display device, the inverter apparatus comprising:
a first inverter circuit configured to receive a driving voltage signal from the outside and first and second scanning control
signals for controlling the first and second lamp groups to turn on and off, and to output a first operation voltage signal
for a first operation frequency associated with the first scanning control signal, the first inverter including:

a first power converting unit configured to convert the driving voltage signal into the first operation voltage signal based
on the first operation frequency which is determined in response to a change in a resonance frequency, wherein the resonance
frequency changes based on a number of the first and second lamp groups turned on; and

a first transformer configured to transform the first operation voltage signal into an operation voltage for controlling the
first lamp group to turn on and off; and

a second inverter circuit configured to receive the driving voltage signal and the first and second scanning control signals,
and to output a second operation voltage signal for a second operation frequency associated with the second scanning control
signal,

a second power converting unit configured to convert the driving voltage signal into the second operation voltage signal based
on the second operation frequency which is determined in response to the change in the resonance frequency; and

a second transformer configured to transform the second operation voltage signal into an operation voltage for controlling
the second lamp group to turn on and off,

wherein the first operation frequency for the first lamp group is decreased to a predetermined value in response to the change
in the resonance frequency when the first and second lamp groups are set to be in an on-state simultaneously in response to
the first and second scanning control signals.

US Pat. No. 9,986,611

LIGHT-EMITTING ELEMENT DRIVING DEVICE, LIGHT-EMITTING DEVICE, AND VEHICLE

Rohm Co., Ltd., Kyoto (J...

1. A light-emitting element driving device comprising:an output voltage feeder configured to generate an output voltage from an input voltage based on a control signal from a controller to feed the output voltage to at least one light-emitting element; and
an emergency driver configured to turn ON all or part of the at least one light-emitting element irrespective of the control signal from the controller on receiving a signal indicating a fault in the controller,
wherein the output voltage feeder and the emergency driver share between them:
a high-side transistor and a low-side transistor connected between a terminal to which the input voltage is applied and a ground terminal, a connection node between the high-side and low-side transistors being connected via a coil to an output capacitor,
a high-side driver and a low-side driver configured to generate drive control signals for the high-side and low-side transistors respectively,
an amplifier configured to generate a feedback voltage commensurate with a current through the at least one light-emitting element, and
a driver controller configured to drive the high-side and low-side drivers so as to turn the high-side and low-side transistors ON and OFF according to the feedback voltage, and
wherein the high-side and low-side transistors, the high-side and low-side drivers, the amplifier, and the driver controller are all integrated in a single semiconductor device.

US Pat. No. 9,525,390

SWITCHING CIRCUIT

ROHM CO., LTD., Kyoto (J...

1. A switching circuit that generates a switching pulse that is pulse modulated according to an input signal, the switching
circuit comprising:
a switching output stage that comprises a high-side transistor and a low-side transistor, and that outputs the switching pulse
according to a pulse modulated signal;

an error amplifier that comprises a phase compensating filter that generates a feedback signal corresponding to the switching
pulse, and that generates an error signal corresponding to a difference between the input signal and the feedback signal;
and

a pulse modulator that comprises an oscillator that generates a carrier signal having a variable frequency, and that pulse-modulates
the carrier signal according to the error signal, so as to generate the pulse modulated signal,

wherein the phase compensating filter is configured such that the frequency characteristics thereof can be changed according
to the frequency of the carrier signal, and wherein the error amplifier further comprises:

an operational amplifier that receives a reference voltage at a non-inverting input terminal thereof; and
a first resistor having one end connected to an inverting input terminal of the operational amplifier and the other end receiving
the input signal,

and wherein the phase compensating filter comprises:
a feedback capacitor arranged between an output terminal and the inverting input terminal of the operational amplifier, and
configured to have a variable capacitance; and

a second resistor having one end connected to the inverting input terminal of the operational amplifier and the other end
receiving a switching signal corresponding to the switching pulse.

US Pat. No. 9,252,210

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a SiC substrate;
a first conductive type SiC epitaxial layer, formed on a surface of the SiC substrate;
a field insulating film, covering a portion of a surface of the first conductive type SiC epitaxial layer, wherein the surface
of the first conductive type SiC epitaxial layer comprises a field region and an active region, the active region being surrounded
by the field region and not covered by the field insulating film; and

an electric field moderating part, positioned in a portion of the field region closer to the active region, wherein a top
surface of the electric field moderating part is lower than the surface of the first conductive type SiC epitaxial layer at
the active region, and wherein the electric field moderating part comprises a second conductive type layer.

US Pat. No. 9,209,807

DIFFERENTIAL RECEIVER, ELECTRONIC DEVICE AND INDUSTRIAL DEVICE INCLUDING THE SAME, AND METHOD OF RECEIVING DIFFERENTIAL SIGNAL

ROHM CO., LTD., (JP)

19. A method of receiving differential signals including a positive signal and a negative signal, comprising:
by a first comparator, which has a positive offset voltage, configured to compare the positive signal and the negative signal,
generating a first signal that is asserted when a difference between the positive signal and the negative signal is larger
than the positive offset voltage;

by a second comparator, which has a negative offset voltage, configured to compare the positive signal and the negative signal,
generating a second signal that is asserted when the difference between the positive signal and the negative signal is smaller
than the negative offset voltage;

generating a third signal that is asserted when the first signal and the second signal are negated; and
generating an output signal based on the first to third signals by generating a fourth signal by filtering the third signal
and generating the output signal based on the first signal, the second signal, and the fourth signal.

US Pat. No. 9,202,962

SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A fabrication method of a solid state imaging device which a circuit unit on a substrate, a lower electrode layer, a compound
semiconductor thin film of chalcopyrite structure that functions as an optical absorption layer, and an optical transparent
electrode layer are laminated to be composed, the fabrication method comprising:
forming the circuit unit on the substrate;
forming the lower electrode layer on the substrate on which the circuit unit is formed;
patterning the lower electrode layer by photo lithography, and separating for every pixel,
forming the compound semiconductor thin film of the chalcopyrite structure all over an element region; and
patterning the compound semiconductor thin film of the chalcopyrite structure by photo lithography, and separating for every
pixel according to the separated underlying lower electrode layer, wherein patterning the compound semiconductor thin film
of the chalcopyrite structure includes:

a first step of patterning by dry etching; and
a second step of removing, by wet etching, an etching residue produced at the first step.

US Pat. No. 9,071,032

SUB-MOUNT HAVING PHOTODIODE AND LIGHT-EMITTING ELEMENT MODULE

ROHM CO., LTD., Kyoto (J...

1. A sub-mount having a photodiode region, comprising:
a laser diode light-emitting element that emits light having an emission wavelength which changes as temperature changes within
a range of ?10° C. and 90° C.; and

a photodiode having a first conductivity-type layer arranged in a surface portion of the sub-mount in a photodiode region
and configured to form a light-receiving surface, and having a second conductivity-type region arranged below the first conductivity-type
layer, the photodiode being configured to receive at the light-receiving surface a light emitted from the light-emitting element
and to convert the light into a photocurrent,

wherein the photodiode additionally has a depletion layer generated from the first conductivity-type layer, the depletion
layer having a thickness in the range 20 ?m to 45 ?m; and

wherein a peak light-receiving wavelength at which the photocurrent of the photodiode becomes its maximum value is more than
or equal to a minimum emission wavelength of the light-emitting element and less than or equal to a maximum emission wavelength
of the light-emitting element.

US Pat. No. 9,496,513

ORGANIC THIN FILM PHOTOVOLTAIC DEVICE, FABRICATION METHOD THEREOF, AND ELECTRONIC APPARATUS

ROHM CO., LTD., Kyoto (J...

1. An organic thin film photovoltaic device comprising:
a substrate;
a first electrode layer disposed on the substrate;
a hole transport layer disposed on the first electrode layer;
a bulk heterojunction organic active layer disposed on the hole transport layer;
a second electrode layer disposed on the bulk heterojunction organic active layer;
a passivation layer disposed on the second electrode layer;
a colored barrier layer disposed on the passivation layer; and
a back sheet passivation layer disposed on the colored barrier layer.

US Pat. No. 9,472,623

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

ROHM CO., LTD., Kyoto (J...

1. A nitride semiconductor element, comprising:
a Si substrate including a primary surface;
a buffer layer comprised of an AlN layer formed on the primary surface of the Si substrate, and an AlGaN laminated structure
formed by laminating multiple AlGaN layers on the AlN layer, the buffer layer having a primary surface which has a plane orientation
that is a c plane;

a GaN electron transfer layer formed on the AlGaN laminated structure; and
an AlGaN electron supply layer formed on the GaN electron transfer layer,
wherein the AlGaN laminated structure includes a reference AlGaN layer, and an AlGaN layer that is closer to the AlN layer,
and the reference AlGaN layer has an Al component that is lower than that of the AlGaN layer that is closer to the AlN layer,
and

wherein the reference AlGaN layer has an a-axis average lattice constant, the AlGaN layer arranged in contact with a surface
of the reference AlGaN layer has an a-axis in-plane lattice constant, wherein the surface of the reference AlGaN layer faces
the AlN layer, and wherein the a-axis average lattice constant of the reference AlGaN layer is greater than the a-axis in-plane
lattice constant of the AlGaN layer arranged in contact with the surface of the reference AlGaN layer, and lower than an original
a-axis average lattice constant of the reference AlGaN layer.

US Pat. No. 9,413,251

POWER DELIVERY DEVICE, AC ADAPTER, ELECTRONIC APPARATUS AND POWER DELIVERY SYSTEM, HAVING VARIABLE FUNCTION OF OUTPUT VOLTAGE VALUE AND AVAILABLE OUTPUT CURRENT CAPACITY

ROHM CO., LTD., Kyoto (J...

1. A power delivery device comprising:
a DC/DC converter disposed between an input and an output;
a primary-side controller configured to control an input current of the DC/DC converter;
a secondary-side controller connected with AC coupling to the output, the secondary-side controller configured to feed back
electric power information of the output to the primary-side controller;

an insulation circuit connected to the secondary-side controller, the insulation circuit configured to feed back the electric
power information of the output to the primary-side controller; and

a DC/AC component separating circuit connected to the insulation circuit, the DC/AC component separating circuit configured
to feed back the electric power information of the output to the primary-side controller, wherein

the insulation circuit is an insulating bidirectional circuit connected with DC coupling to an output of the DC/DC converter,
wherein

the primary-side controller varies an output voltage value and an available output current capacity of the DC/DC converter
by controlling the input current on the basis of the electric power information fed back from the secondary-side controller
through the insulation circuit and the DC/AC component separating circuit.

US Pat. No. 9,349,676

CHIP ROTATED AT AN ANGLE MOUNTED ON DIE PAD REGION

ROHM CO., LTD., (JP)

1. A package, comprising:
a plurality of lead frames configured to extend inwardly from an outer circumferential portion of the package;
a die pad region surrounded with the lead frames in a plane view;
a semiconductor chip mounted on the die pad region;
a plurality of bonding pads disposed on the semiconductor chip; and
a plurality of bonding wires configured to connect the lead frames and the bonding pads, respectively,
wherein the bonding wires are respectively bonded to front end portions of the lead frames at angles ranging from 45 to 135
degrees with respect to a trace of the front end portions of the lead frames in the plane view,

wherein the sides of the semiconductor chip are placed to have an acute angle equal to or smaller than 45 degrees with respect
to the trace of the front end portions of the lead frames in the plane view,

wherein the semiconductor chip is disposed at a location below where the plurality of lead frames are disposed, and is mounted
on the die pad region at a bottom of the package,

wherein the plurality of bonding wires connect the front end portions of the plurality of lead frames, which are disposed
higher than the plurality of bonding pads within the package, and the plurality of bonding pads, respectively, and

wherein all of the plurality of bonding pads are arranged at the sides of the semiconductor chip.

US Pat. No. 9,270,111

LOAD DRIVE DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A load device comprising:
a load drive unit for switching on/off an output current that flows to an inductive load;
an overcurrent protection circuit for detecting whether the output current is in an overcurrent state; and
a mask time generation circuit for instructing the load drive unit to carry out overcurrent protection operation when an overcurrent
state of the output current has continued for a predetermined mask time,

wherein the load drive unit comprises:
an output transistor connected to one end of the inductive load; and
a pre-driver for generating a control signal of the output transistor in accordance with an input signal,
wherein the pre-driver switches off the output transistor more slowly during overcurrent protection operation than during
normal operation, and

wherein the load drive unit has an input signal breaker for cutting off the input signal without waiting for the mask time
to elapse when an overcurrent state of the output current has been detected.

US Pat. No. 9,250,800

TOUCH-PANEL INPUT DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A touch-panel input device comprising:
a touch panel; and
an input controller for sensing a two-point touch on the touch panel in either a two-point touch input sensing mode for a
right hand suitable for the placement of right fingers or a two-point touch input sensing mode for a left hand suitable for
the placement of left fingers, the input controller being capable of switching between the two input sensing modes,

wherein the input controller performs a different input depending on the switching between the two input sensing modes, and
wherein the input controller inputs point-to-point relative position information on the basis of the two-point sensing information
in one of the two input sensing modes, and inputs absolute position information of the two points in the other of the two
input sensing modes.

US Pat. No. 9,202,633

LAMINATE TYPE ENERGY DEVICE AND METHOD OF MANUFACTURING THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A laminate type energy device comprising:
a plurality of cells, each having a laminated body of at least two layers laminated such that positive and negative electrodes
are alternated with a separator through which an electrolyte and ions are passed, being interposed between the positive and
negative active material electrodes, and positive and negative lead-out electrodes are exposed,

wherein tab electrodes that allow electricity to flow outside of the laminate type energy device are joined to the lead-out
electrodes via connecting portions, and

wherein the cells are sealed by a sheathing laminate sheet via a sealing material covering at least the connecting portions,
wherein the sealing material is made of plate or sheet-shaped thermoplastic resin, and
wherein an encapsulation material is melt at the same time when the sealing material is thermally melt, and the encapsulation
material and the sealing material are integrated to seal a gap between the sheathing laminate sheet, the lead-out electrodes,
the tab electrodes and the connecting portions.

US Pat. No. 9,357,045

CONTROL CIRCUIT OF MUTUAL CAPACITANCE TYPE ELECTROSTATIC CAPACITIVE SENSOR AND ELECTRONIC DEVICE USING THE SAME

ROHM CO., LTD., (JP)

1. A control circuit of an electrostatic capacitive sensor including a plurality of transmitter electrodes disposed in parallel
in a first direction and a plurality of receiver electrodes disposed in parallel in a second direction, and spaced apart from
the plurality of transmitter electrodes by specific intervals, the control circuit comprising:
a transmitter circuit configured to apply a periodical transmission signal to each of the plurality of transmitter electrodes;
a receiver circuit configured to generate, based on a reception signal generated in each of the plurality of receiver electrodes
in response to the transmission signal, a detection signal indicating a change in electrostatic capacitance formed at each
of intersections of the plurality of transmitter electrodes and the plurality of receiver electrodes; and

a controller configured to control an operation mode of the transmitter circuit,
wherein the transmitter circuit is configured to switch between a first mode, where the transmission signal is sequentially
applied to the plurality of transmitter electrodes, and a second mode, where the plurality of transmitter electrodes are grouped
and the same transmission signal is applied to a plurality of transmitter electrodes belonging to the same group, and

wherein the controller switches between a first condition, where the transmitter circuit is fixedly set to the first mode
in which one frame is scanned at a first predetermined time interval, and a second condition, where the transmitter circuit
is set to alternate between the first mode and the second mode in which one frame is scanned at a second predetermined time
interval, and a first repetition period in the first condition is shorter than a second repetition period in the second condition.

US Pat. No. 9,276,061

DIODE AND SIGNAL OUTPUT CIRCUIT INCLUDING THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A diode, comprising:
a p-type semiconductor substrate;
an n-type semiconductor layer formed on the p-type semiconductor substrate;
a p-type isolation region formed to surround a predetermined region of the n-type semiconductor layer on the p-type semiconductor
substrate;

an n-type buried layer formed across the p-type semiconductor substrate and the n-type semiconductor layer within the predetermined
region, the n-type buried layer having an impurity concentration higher than an impurity concentration of the n-type semiconductor
layer;

an n-type collector wall formed in the n-type semiconductor layer, the n-type collector wall standing on the n-type buried
layer toward a surface of the n-type semiconductor layer to surround the predetermined region of the n-type semiconductor
layer, and having an impurity concentration higher than the impurity concentration of the n-type semiconductor layer;

a p-type anode region and a plurality of n-type cathode regions formed in a diode formation region, which is defined within
a region surrounded by the n-type collector wall in a surface layer of the n-type semiconductor layer; and

a p-type guard ring formed to surround the diode formation region in a region between the diode formation region of the surface
layer of the n-type semiconductor layer and the p-type isolation region, the p-type guard ring being electrically connected
to the plurality of n-type cathode regions,

wherein a transistor for reducing a leakage current is formed by the p-type anode region, the p-type guard ring, and an n-type
semiconductor between the p-type anode region and the p-type guard ring.

US Pat. No. 9,455,384

SEMICONDUCTOR LIGHT-EMITTING DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor light-emitting device comprising:
a substrate including a base and a wiring pattern formed on the base, the base including a first primary surface, a second
primary surface and a first side surface, the first primary surface and the second primary surface being spaced apart from
each other in a first direction and parallel to each other, the first side surface being connected to both the first primary
surface and the second primary surface and facing in a second direction perpendicular to the first direction;

an LED chip mounted on the first primary surface of the base; and
a resin package covering the LED chip and including a lens and a foundation portion, the lens being positioned in front of
the LED chip, the foundation portion being closer to the substrate than the lens is in the first direction, the foundation
portion including a first foundation portion side surface that is flush with the first side surface of the base,

wherein the wiring pattern includes a pair of first mount portions and a pair of second mount portions, the first mount portions
being formed on the second primary surface and spaced apart from each other in a third direction perpendicular to both the
first direction and the second direction, the second mount portions facing in the second direction, being spaced apart from
each other in the third direction, and protruding beyond the first side surface in the second direction.

US Pat. No. 9,287,202

RESIN-ENCAPSULATED SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

Rohm Co., Ltd., Kyoto (J...

1. A resin-sealed semiconductor device comprising:
a semiconductor chip including a silicon substrate;
a die pad on which the semiconductor chip is secured;
a sealing resin layer sealing the semiconductor chip; and
a plurality of lead terminals connected electrically with the semiconductor chip, one end portion of the plurality of lead
terminals being covered by the sealing resin layer,

wherein a plurality of the lead terminals are arranged along each side of the resin-sealed semiconductor device, wherein any
of the lead terminals arranged at an end of one of the sides of the resin-sealed semiconductor device extends from an outer
surface of the side of the resin-sealed semiconductor device to a vicinity of a center of the semiconductor chip,

wherein the die pad has a curved side surface so as to have a gradually varying thickness,
wherein the die pad has a plan area larger than a plan area of the semiconductor chip,
wherein, in the die pad, only in a predetermined region other than a region in which the semiconductor chip is arranged, an
open part that penetrates from one main surface side to the other main surface side of the die pad is provided,

wherein the open part is in a vicinity of the semiconductor chip, and
wherein a thermal expansion coefficient of at least one of the semiconductor chip, the die pad, or the lead terminals facilitates
removal of moisture near the semiconductor chip and reduces likelihood of moisture reaching the semiconductor chip.

US Pat. No. 9,231,426

CHARGE CONTROL DEVICE AND ELECTRONIC APPARATUS USING THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A charge control device, comprising:
a control circuit configured to monitor a charge voltage and a charge current of a battery and perform an output feedback
control upon the charge voltage and the charge current to thereby achieve a constant voltage charge or a constant current
charge of the battery; and

an adjusting circuit configured to adjust the output feedback control of the control circuit based on charge state information
of the battery obtained by a gas gauge device,

wherein the control circuit is configured to perform the output feedback control of the charge voltage to maintain the charge
voltage at a target voltage when the constant voltage charge of the battery is required, and perform the output feedback control
of the charge current to maintain the charge current at a target current when the constant current charge of the battery is
required, and

wherein the adjusting circuit is configured to adjust the target voltage and the target current based on the charge state
information.

US Pat. No. 9,391,033

SEMICONDUCTOR DEVICE

ROHM CO., LTD., (JP)

1. A semiconductor device comprising:
a semiconductor substrate having an integrated circuit formed thereon;
a plurality of electrode pads formed on the semiconductor substrate, being intended for input and output of signals between
the integrated circuit and an external circuit; and

a plurality of external electrodes, each connected to a corresponding one of the plurality of electrode pads via wiring, the
external electrodes making connection terminals for the external circuit,

wherein the plurality of external electrodes include a first group of external electrodes being outermost external electrodes
and a second group of external electrodes arranged inside the first group of external electrodes, and

wherein the plurality of electrode pads are arranged between the first group of external electrodes and the second group of
external electrodes, and

at least one of the plurality of electrode pads is provided at a position where a distance between the at least one of the
plurality of electrode pads and one of the first group of external electrodes and a distance between the at least one of the
plurality of electrode pads and one of the second group of external electrodes is approximately same.

US Pat. No. 9,231,099

SEMICONDUCTOR POWER MOSFET DEVICE HAVING A SUPER-JUNCTION DRIFT REGION

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a first conductivity type semiconductor substrate having trenches formed therein and a first principal surface;
a plurality of second conductivity type base regions formed on the first principal surface; and
a plurality of second conductivity type semiconductor regions, each top edge of the second conductivity type semiconductor
regions contacting one of the second conductivity type base regions, the second conductivity type semiconductor regions being
extended in directions that are each parallel to the first principal surface, the second conductivity type semiconductor regions
further being extended in a direction vertical to the first principal surface, the second conductivity type semiconductor
regions respectively being embedded in the trenches formed in the first conductivity type semiconductor substrate, wherein

the directions, that are parallel to the first principal surface and that the second conductivity type semiconductor regions
extend in, include at least two directions including a first direction and a second direction different from the first direction,

a first group of the plurality of the second conductivity type semiconductor regions is formed so as to be extended in the
first direction, and a second group of remaining second conductivity type semiconductor regions of the second conductivity
type semiconductor regions is formed so as to be extended in the second direction, the first direction being a direction to
which each of the second conductivity type semiconductor regions in the first group is extended in, and the second direction
being a direction to which each of the second conductivity type semiconductor regions in the second group is extended in,

the plurality of the second conductivity type semiconductor regions each having a same width,
gaps, that all have a same distance, being formed between the second conductivity type semiconductor regions adjacent to each
other so as to be extended in both the first and second directions so that a plurality of the gaps extend in the first direction
and a plurality of the gaps extend in the second direction,

one of the gaps being formed between one of the second conductivity type semiconductor regions of the first group and one
of the second conductivity type semiconductor regions of the second group that are adjacent to each other, and another of
the gaps being formed between two of the second conductivity type semiconductor regions of the first group that are adjacent
to each other or two of the second conductivity type semiconductor regions of the second group that are adjacent to each other,

the plurality of the second conductivity type semiconductor regions and parts of the first conductivity type semiconductor
substrate between the second conductivity type semiconductor regions are depleted by a depletion layer, the depletion layer
extending in a direction parallel to the first principal surface from a plurality of pn junction interfaces, and the pn junction
interfaces are formed between the first conductivity type semiconductor substrate and the plurality of the second conductivity
type semiconductor regions.

US Pat. No. 9,413,192

MOBILE DEVICE

ROHM CO., LTD., Kyoto (J...

1. A mobile device that can be charged using an electric power signal received from a wireless power transmitter, the mobile
device comprising:
a secondary battery;
a wireless power receiver that receives the electric power signal;
a charger circuit that charges the secondary battery using electric power received by the wireless power receiver; and
a sensor that detects whether or not the mobile device has been moved from a charging stand after the wireless power receiver
transmits, to the wireless power transmitter, an EPT (End of Power Transfer) packet that indicates that charging of the secondary
battery has been completed.

US Pat. No. 9,563,241

POWER SUPPLY DEVICE INCLUDING AN ELECTRO-CONDUCTIVE CABLE WOUND AROUND AN INDUCTOR OR OUTPUT CAPACITOR

Rohm Co., Ltd., Kyoto (J...

1. A power supply device, comprising:
an output portion that generates an output voltage from an input voltage by means of on-off control of an output transistor
and supplies the output voltage to a load,

an output feedback controller that drives the output portion by performing output feedback control, and
a detector that detects, by means of an electromagnetic induction method, a ripple component of a monitoring target current
due to the on-off control of the output transistor,

wherein the output feedback controller performs the output feedback control by using a detection result from the detector,
the monitoring target current route is an inductor or output capacitor of the output portion, and
the magnetic coupling portion is an electro-conductive cable that is wound around the inductor or the output capacitor.

US Pat. No. 9,502,495

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor layer provided with a gate trench;
a first conductivity type source region formed to be exposed on a surface side of the semiconductor layer for forming part
of a side surface of the gate trench;

a second conductivity type channel region formed on a side of the source region closer to a back surface of the semiconductor
layer to be in contact with the source region for forming part of the side surface of the gate trench;

a first conductivity type drain region formed on a side of the channel region closer to the back surface of the semiconductor
layer to be in contact with the channel region for forming a bottom surface of the gate trench;

a gate insulating film formed on an inner surface of the gate trench; and
a gate electrode embedded inside the gate insulating film in the gate trench, wherein
the channel region includes a channel portion formed along the side surface of the gate trench so that a channel is formed
in operation and a projection projecting on the back surface side of an end portion of the gate trench.

US Pat. No. 9,466,799

ORGANIC DEVICES, ORGANIC ELECTROLUMINESCENT DEVICES AND ORGANIC SOLAR CELLS

Junji Kido, Yonezawa-Ken...

2. An organic device having a layer structure on a substrate in the following deposition sequence:
(A) an anode;
(B) a layer structure mainly consisting of organic compounds;
(C) a radical anion-contained layer in which an organic electron-transporting molecule is in a state of radical anions generated
by a radical anion generation means;

(D) a cathode-adjacent layer consisting of a mixture of MoO3 and alpha-NPD at a mole fraction of about 0.5 alpha-NPD to about 0.9 alpha-NPD; and

(E) a cathode layer;
wherein the laminated layer of (C) and (D) works as “hole current-electron current conversion layer” as well as “damage reduction
layer” to reduce the damage induced during the electrode deposition process.

US Pat. No. 9,349,916

SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING PATTERNS

ROHM CO., LTD., Kyoto (J...

1. A method of manufacturing a semiconductor light emitting device, the method comprising:
forming a substrate structure;
forming a semiconductor layer on the substrate structure, the semiconductor layer including a light emitting layer;
forming an electrode on a surface of the semiconductor layer; and
performing a frost process on the surface of the semiconductor layer to form a frost-processed layer including a rough uneven
portion and a microstructural uneven portion on the surface of the semiconductor layer at a side of the electrode, the performing
the frost process includes performing a first frost process to form the rough uneven portion and performing a second frost
process to form the microstructural uneven portion.

US Pat. No. 9,332,618

ILLUMINATOR CONTROLLED WITH TOUCHLESS SENSOR

ROHM CO., LTD., Kyoto (J...

1. An illuminator comprising:
a light source;
a touchless sensor for non-contact detection of approach or movement of a detection target in a range of a detection distance;
a control unit for an ON/OFF control of the light source based on an output from the touchless sensor; and
an enabling unit connected to the control unit,
wherein the control unit includes a data memory for storage of threshold value that defines the detection distance, and reflected-light
intensity information regarding a reflected light coming from the detection target to the touchless sensor,

the control unit has a normal mode and an adjustment mode, the control unit performs the ON/OFF control in the normal mode,
and the control unit adjusts in the adjustment mode the threshold value stored in the data memory, and

the enabling unit switches the normal mode and the adjustment mode.

US Pat. No. 9,254,650

THERMAL PRINTHEAD AND METHOD OF MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A thermal printhead comprising:
a substrate;
a resistor layer formed on the substrate;
an electrode layer formed on the substrate and electrically connected to the resistor layer; and
an insulating layer;
wherein the electrode layer includes a first electrically conductive portion and a second electrically conductive portion
spaced apart from each other,

the resistor layer includes a heater portion that bridges the first electrically conductive portion and the second electrically
conductive portion as viewed in a thickness direction of the substrate,

the insulating layer includes an intervening portion positioned between the electrode layer and the heater portion in the
thickness direction of the substrate, and

the first electrically conductive portion and the second electrically conductive portion are connected to the resistor layer
via a plurality of openings formed in the intervening portion of the insulating layer.

US Pat. No. 9,077,984

CONTROL SYSTEM, CONTROL DEVICE, IMAGE SYSTEM, EYEGLASSES, AND IMAGE DISPLAY DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A control system, for controlling an image system, wherein the image system comprises an image display device for displaying
3D images containing a left-eye image and a right-eye image, and at least one eyeglasses for viewing the 3D images;
the image display device alternately displays the left-eye image and the right-eye image;
the at least one eyeglasses comprising:
a first optical shutter and a second optical shutter respectively disposed corresponding to the left-eye image and the right-eye
image; and

a first control circuit comprising:
a sensor configured to detect an amount of an inclined angle of the at least one eyeglasses with respect to a horizontal direction;
and

a transmitter configured to transmit a first signal indicating the amount of the inclined angle to the image display device,
the transmission being executed regardless of the amount of the inclined angle detected by the sensor;

the image display device comprising a second control circuit comprising:
a receiver configured to receive the first signal;
a determinator configured to recognize the amount of the inclined angle indicated by the first signal received by the receiver
and determine whether the amount of the inclined angle exceeds a first range according to the amount of the inclined angle
indicated by the first signal; and

a mode switcher configured to switch an action mode of the image display device between a first mode and a second mode
based on a determination result of the determinator;
wherein the first mode alternately displays the left-eye image and the right-eye image,
the second mode does not switch the left-eye image with the right-eye image; and
the first control circuit further comprises an optical shutter adjuster, configured when in the first mode to respectively
open and close the first and second optical shutters in synchronization with the display of the left-eye image and the right-eye
image, and in the second mode, to open both the first and second optical shutters.

US Pat. No. 9,053,991

SEMICONDUCTOR DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A semiconductor chip comprising:
an electrode pad portion on a face of a substrate;
a first protection layer disposed on the face of the substrate and overlapping a peripheral portion of the electrode pad portion
establishing a first opening through which a first top face portion of the electrode pad portion is exposed, the first protection
layer disposed on the face of the substrate and overlapping part of the electrode pad portion;

an insulating protection layer covering a region on the first protection layer and a region on the electrode pad portion such
that a second opening exposing a second top face portion of the electrode pad portion is formed, the second opening being
within the first opening and the second top face portion being within the first top face portion of the electrode pad portion;
and

a barrier metal layer disposed on the second top face portion of the electrode pad portion, the barrier metal layer further
comprising a peripheral part of the barrier metal layer formed over the insulating protection layer such that an electrode
pad side facing surface of the peripheral part of the barrier metal layer comprises a curved surface having a center of curvature
only on the electrode pad side of the barrier metal layer as seen in a sectional view.

US Pat. No. 10,026,695

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:a semiconductor substrate;
an insulating film formed above the semiconductor substrate;
a wiring having copper as a main component and formed above the insulating film;
a barrier metal film having a higher modulus of rigidity than copper and interposed between the insulating film and the wiring; and
a multilayer wiring structure formed above the semiconductor substrate and having a plurality of wiring layers laminated via an interlayer insulating film, wherein
the insulating film is formed above the multilayer wiring structure so as to cover the multilayer wiring structure, and
the wiring is formed above the insulating film as an uppermost layer wiring.

US Pat. No. 9,900,944

LIGHTING DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A lighting device comprising:
a power supply circuit arranged to supply a drive voltage;
light emitting element groups including a first light emitting element group having a plurality of first light emitting elements
connected in series, arranged to emit light by a first light emission current flowing when being applied with a first light
emission voltage based on the drive voltage, at a first light emission reference voltage or higher, and a second light emitting
element group having a plurality of a second light emitting elements connected in series, arranged to emit light by a second
light emission current flowing when being applied with a second light emission voltage based on the drive voltage, at a second
light emission reference voltage higher than the first light emission reference voltage, the light emitting element groups
emitting light when being applied with a light emission voltage equal to or higher than a light emission reference voltage
based on the second light emission reference voltage;

a first semiconductor chip including a first light emission control unit arranged to detect a magnitude relationship between
the drive voltage and the light emission reference voltage, to perform light emission control to cause light emission of the
light emitting element group if the drive voltage is higher than the light emission reference voltage, and to perform light
emission stop control to stop light emission of the light emitting element group if the drive voltage is lower than the light
emission reference voltage, the first semiconductor chip being connected to the first light emitting element group; and

a second semiconductor chip including a second light emission control unit arranged to detect a magnitude relationship between
the drive voltage and the light emission reference voltage, to perform light emission control to cause light emission of the
light emitting element group if the drive voltage is higher than the light emission reference voltage, and to perform light
emission stop control to stop light emission of the light emitting element group if the drive voltage is lower than the light
emission reference voltage, the second semiconductor chip being connected to the first semiconductor chip and the second light
emitting element group.

US Pat. No. 9,484,336

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MOUNTING STRUCTURE AND POWER SEMICONDUCTOR DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A semiconductor device, comprising:
a plurality of die pad sections;
a plurality of semiconductor chips, each of which is arranged on each of the die pad sections;
a resin encapsulation portion including a surface, the surface having a recess portion for exposing at least a portion of
the die pad sections, the resin encapsulation portion configured to cover the die pad sections and the semiconductor chips;
and

a heat radiation sheet arranged in the recess portion, the heat radiation sheet being insulating,
the heat radiation sheet composed of an elastic material exposed toward a direction in which the recess portion is opened,
the heat radiation sheet directly facing at least a portion of the die pad sections, the elastic material overlapping with
at least a portion of the die pad sections when seen in a thickness direction of the heat radiation sheet, wherein the recess
portion has a recess side surface surrounding the heat radiation sheet,

wherein the heat radiation sheet has a section protruding from the surface of the resin encapsulation portion,
wherein the heat radiation sheet is elastically deformable and the heat radiation sheet makes direct contact with the recess
side surface of the recess portion, and

wherein each of the die pad sections has a die pad rear surface with which the heat radiation sheet makes direct contact,
the die pad rear surface being an irregular surface.

US Pat. No. 9,392,097

INCOMING/OUTGOING-TALK UNIT AND INCOMING-TALK UNIT

Rohm Co., Ltd., Kyoto (J...

1. An eye-glasses type accessary unit for a mobile telephone, the eye-glasses type accessary unit arranged for attaching to
an ear having a base and an auricle that includes an inner side to collect incoming sound into an external auditory meatus
and that includes an outer side opposite the inner side, the eye-glasses type accessary unit comprising:
a pair of temples for a right ear and a left ear arranged to come up against the bases of the right ear and the left ear,
respectively;

a cartilage conduction vibration source within at least one of the temples,
an outgoing-talk unit, and
a unit for performing short-range wireless communication with the mobile telephone,
wherein the cartilage conduction vibration source transmits vibration to the outer side of the cartilage of the base of the
ear close to an inner entrance of the external auditory meatus by means of direct contact of the one of the temples to the
outer side of the cartilage of the base of the ear without an audio source on the inner side of the auricle in a state where
the eye-glasses type accessary unit is put on without crushing the auricle, and wherein the transmitted vibration generates
air conduction sound from the inner wall of the external auditory meatus for transmission to the tympanic membrane.

US Pat. No. 9,352,585

THERMAL PRINT HEAD AND THERMAL PRINTER

ROHM CO., LTD., Kyoto (J...

1. A thermal print head comprising:
a base member;
a heat storage region formed on the base member;
a resistor layer formed on the base member;
an electrode layer formed on the base member and electrically connected to the resistor layer; and
a cover layer covering the resistor layer,
wherein the resistor layer includes a plurality of heating portions spanned between two portions of the electrode layer spaced
from each other as viewed in a thickness direction of the base member,

a first groove segment is formed at least in the heat storage region, and
the first groove segment is located between two heating portions adjacent to each other in a main scanning direction among
the plurality of heating portions.

US Pat. No. 9,356,143

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor layer of a first conductive type having selectively formed therein a field effect transistor region;
a source region and a drain region of a second conductive type formed in a surface of the semiconductor layer with a gap therebetween
in the field effect transistor region;

a pair of drift regions of the second conductive type formed with a gap therebetween so as to surround individually the source
region and the drain region;

a gate electrode formed over the surface of the semiconductor layer across a gate insulating film so as to face a channel
region formed in the area between the pair of drift regions;

a first diffusion region of the first conductive type formed in the channel region at a gap from at least one of the drift
regions, the first diffusion region having a concentration higher than the semiconductor layer; and

second diffusion regions of the first conductive type formed directly under at least the drift regions and having a concentration
higher than the semiconductor layer,

wherein, between the first diffusion region and said at least one of the drift regions, a first withstand voltage maintaining
region of the first conductive type is present, the first withstand voltage maintaining region having a concentration lower
than the first diffusion region.

US Pat. No. 9,300,211

DC/DC CONVERTER, CONTROL CIRCUIT THEREOF, AND ELECTRONIC APPARATUS

ROHM CO., LTD, (JP)

1. A control circuit of a step-up/step-down DC/DC converter, wherein the step-up/step-down DC/DC converter comprises:
an input line to which an input voltage is applied;
an output line to which a load is connected;
a first switching transistor connected between the input line and a first switching node;
a first rectification element connected between the first switching node and a ground;
an inductor connected between the first switching node and a second switching node;
a second switching transistor connected between the second switching node and the ground;
a second rectification element connected between the second switching node and the output line; and
an output capacitor connected between the output line and the ground,
the control circuit comprising:
a hysteresis comparator configured to receive a feedback voltage corresponding to an output voltage generated in the output
line at a first input terminal and a reference voltage at a second input terminal, compare the feedback voltage with a threshold
voltage corresponding to the reference voltage, and generate a pulse signal indicating a result of the comparison;

a logic unit configured to fix the second switching transistor at an OFF state and switch the first switching transistor based
on the pulse signal in a step-down mode and fix the first switching transistor at an ON state and switch the second switching
transistor based on the pulse signal in a step-up mode;

a first buffer configured to generate a first ripple voltage having a first polarity which is synchronized with the pulse
signal;

a second buffer configured to generate a second ripple voltage having a second polarity which is synchronized with the pulse
signal, the second polarity being opposite in phase to the first polarity; and

a feedback circuit which includes a first feedback path and a second feedback path and is configured to superimpose the first
ripple voltage on the feedback voltage via the first feedback path and superimpose the second ripple voltage on the reference
voltage via the second feedback path in the step-down mode and superimpose the first ripple voltage on the feedback voltage
via the second feedback path and superimpose the second ripple voltage on the reference voltage via the first feedback path
in the step-up mode.

US Pat. No. 9,236,876

DOUBLE-INTEGRATION TYPE A/D CONVERTER

Rohm Co., Ltd., Kyoto (J...

1. A double-integration type A/D converter for performing A/D conversion by integrating an input voltage and a reference voltage,
comprising:
an integrator configured to integrate the input voltage and the reference voltage;
a first switch configured to relay supply of the input voltage to an input terminal of the integrator;
a second switch configured to relay supply of the reference voltage to the input terminal; and
a control circuit configured to control to open and close the first switch and the second switch,
wherein the control circuit generates a switching signal that opens and closes the first switch and the second switch individually
and a switching signal that opens and closes the first switch and the second switch simultaneously, and

wherein superimposition of the input voltage and the reference voltage is integrated when the first switch and the second
switch are simultaneously closed.

US Pat. No. 9,129,941

WIRELESS MODULE WITH PLURAL IN-PLANE TERMINALS

ROHM CO., LTD., Kyoto (J...

1. A wireless module comprising:
a wireless IC chip for processing transmission/reception signals;
a substrate on which the wireless IC chip is mounted;
a transmitter-receiver at least a part of which is disposed on the substrate; and
a plurality of terminals directly connected to the substrate and extending from the substrate in an in-plane direction of
the substrate,

wherein the substrate has a contour including a first edge extending in a second direction perpendicular to a first direction
corresponding to a thickness direction of the substrate, and the plurality of terminals are arranged along the first edge,
each of the plurality of terminals crossing the first edge and extending toward a first side in a third direction perpendicular
to both of the first and the second directions,

wherein the plurality of terminals connect to a surface of a circuit board so as to keep the substrate away from the circuit
board,

wherein the transmitter-receiver includes a first antenna projecting from the first edge of the substrate toward the first
side in the third direction, at least one portion of the first antenna extending in a fourth direction perpendicular to an
in-plane direction of the surface of the circuit board.

US Pat. No. 9,117,683

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

ROHM CO., LTD., Kyoto (J...

1. A method of manufacturing a semiconductor device, comprising the steps of:
forming, in a semiconductor layer having a first conductivity type source region formed to be exposed on a surface side, a
second conductivity type channel region formed on a side of the source region closer to a back surface to be in contact with
the source region, and a first conductivity type drain region formed on a side of the channel region closer to the back surface
to be in contact with the channel region, a gate trench passing through the source region and the channel region so that the
deepest portion reaches the drain region;

forming a gate insulating film on an inner surface of the gate trench;
forming a gate electrode by embedding an electrode material inside the gate insulating film;
forming a contact trench passing through the source region so that the deepest portion reaches the channel region in the semiconductor
layer;

forming a projection projecting from an end portion, closer to a back surface of the semiconductor layer, of a channel portion
of the channel region formed along a side surface of the gate trench toward the back surface immediately under the contact
trench by implanting second conductivity type ions to reach the vicinity of an interface between the channel region and the
drain region through a bottom surface of the contact trench; and

forming a channel contact region on the channel region by implanting second conductivity type ions into the vicinity of the
bottom surface of the contact trench of the semiconductor layer.

US Pat. No. 9,723,668

SWITCHING CONVERTER AND LIGHTING DEVICE USING THE SAME

ROHM CO., LTD., Ukyo-Ku,...

1. A switching converter for supplying power to a load, comprising:
an output circuit comprising a switching transistor, an inductive element, and a rectifying element configured to rectify
a current flowing to the inductive element according to switching of the switching transistor;

a control circuit configured to drive the switching transistor;
a first capacitor configured to generate a power source voltage for the control circuit between both ends of the first capacitor;
a start-up circuit installed between an input line to the switching converter and the first capacitor, and configured to charge
the first capacitor with an input voltage of the input line; and

a discharge circuit configured to discharge the first capacitor when the switching converter is started up,
wherein the discharge circuit comprises a second capacitor charged according to the input voltage, and a discharge current
flowing through the discharge circuit decreases as a voltage of the second capacitor increases.

US Pat. No. 9,508,803

SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

8. A semiconductor device comprising:
a semiconductor layer made of first conductive-type SiC;
a first conductive-type source layer formed in a manner to be exposed to the surface of the semiconductor layer;
a second conductive-type channel layer formed in a manner contacting the source layer, at a back surface side of the semiconductor
layer relative to the source layer;

a first conductive-type drift layer formed in a manner contacting the channel layer at a back surface side of the semiconductor
layer relative to the channel layer;

an interlayer film having a contact hole that is formed on the surface of the semiconductor layer and that allows the source
layer to be selectively exposed;

a polysilicon layer that is formed on an upper surface of the interlayer film and a surface of the source layer such that
the polysilicon layer is in continuous contact with the upper surface of the interlayer film and the surface of the source
layer, the polysilicon layer having a smoother surface than an uneven shape formed on the basis of a height difference between
the surface of the interlayer film and the surface of the semiconductor layer exposed to the contact hole; and

a source electrode including a metal material formed on the polysilicon layer.

US Pat. No. 9,202,989

LIGHT EMITTING DEVICE AND OPTICAL DEVICE

ROHM CO., LTD., Kyoto (J...

1. A light emitting device, comprising:
an integrally molded substrate having an upper surface, a concave part defined in the upper surface, and a first substrate
lateral facing one side of an orthogonal direction with respect to the direction that is defined from the substrate toward
the LED chip and is contained in the thickness direction of the substrate;

a wiring pattern at least formed on the upper surface and the concave part;
an LED chip bonded to the concave part;
a metal wire connecting to the LED chip;
a back conductor layer formed on one side of the substrate that is opposite to the side of disposing the LED chip and comprising
an end surface facing the same side as the first substrate lateral, and the end surface having a portion spaced apart from
the first substrate lateral and another portion located on the same plane as the first substrate lateral; and

a back covering portion covering the back conductor layer;
wherein the substrate has a first cavity formed thereon having a first bottom surface for disposing the LED chip and a first
lateral connecting to the first bottom surface, and the substrate has a second cavity formed thereon having a second bottom
surface for bonding the metal wire and a second lateral connecting to the second bottom surface; and the first lateral has
a notch formed thereon, which connects to the second bottom surface and the second lateral, and an area of the second bottom
surface of the second cavity is smaller than that of the first bottom surface of the first cavity.

US Pat. No. 9,080,758

LED LAMP

ROHM CO., LTD., Kyoto (J...

1. An LED lamp mounted on a lighting fixture, comprising:
an LED source portion including a plurality of LED chips;
an illuminance sensor detecting ambient illuminance; and
a controller controlling the LED source portion in response to the illuminance of ambient light other than light emitted by
the LED source portion on the basis of an output signal received from the illuminance sensor when the LED source portion is
in a lighting-up state, wherein

the controller includes:
a spontaneous light illuminance calculating means calculating spontaneous light illuminance contributed to the output signal
of the illuminance sensor by the light emitted by the LED source portion on the basis of a driven state of the LED source
portion; and

an on-off control means turning on the LED source portion when ambient light illuminance obtained by subtracting the spontaneous
light illuminance from the output signal of the illuminance sensor is less than or equal to a prescribed threshold and turning
off the LED source portion when the ambient light illuminance is in excess of the threshold.

US Pat. No. 9,066,384

LIGHT EMITTING DEVICE CONTROL CIRCUIT DEVICE AND CONTROL METHOD OF THE CONTROL CIRCUIT DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A light emitting device control circuit device comprising:
multiple drive control lines to perform a pulse current drive for a multiple light emitting devices respectively with a predetermined
interval; and

a pulse voltage supplying line to supply a pulse voltage which changes to ON state or OFF state to the multiple light emitting
devices;

wherein the multiple light emitting devices are driven with a predetermined delay with respect to each other during the ON
state of the pulse voltage supplying line, wherein the light emitting devices form a light emitting unit, multiple light emitting
units are provided, the multiple pulse voltage supplying lines are provided in correspondence with the number of the light
emitting units, the multiple light emitting devices forming the multiple light emitting units are mutually connected to respective
corresponding drive control lines, and the pulse voltages are sequentially supplied to the light emitting units with a predetermined
delay from respective pulse voltage supplying lines, and

illuminating periods of the light emitting same light emitting unit are so set as to occur with a small delay relative to
and an overlap between one another, and driving of different light emitting units so proceeds that, after the driving of one
light emitting unit is completed, the driving of a subsequent light emitting unit is started.

US Pat. No. 9,461,021

ELECTRONIC CIRCUIT COMPRISING PN JUNCTION AND SCHOTTKY BARRIER DIODES

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a first chip including a PN junction diode;
a second chip, including a Schottky barrier diode, connected in parallel to the first chip;
a first connection metal member having a first inductance, the first connection metal member having a first end to which a
cathode of the PN junction diode is connected and a second end to which a cathode of the Schottky barrier diode is connected;

a second connection metal member having a second inductance, the second connection member having a third end and a fourth
end, the third end being connected to the cathode of the Schottky barrier diode;

an output line connected to the fourth end of the second connection member, the output line being electrically connected to
the cathode of the PN junction diode via a first electric path that is formed by the first and second connection metal members,
and that has a sum of the first and second inductances, the output line being electrically connected to the cathode of the
Schottky barrier diode via a second electric path that is formed by the second metal member and exclusive of the first metal
member, and that has the second inductance; and

a molding resin that seals the first chip and the second chip therein.

US Pat. No. 9,425,203

NON-VOLATILE MEMORY CELL IN SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor substrate;
stripe-shaped trenches for separating the semiconductor substrate into a plurality of active regions;
a buried film having a projecting portion that projects from the semiconductor substrate, buried into the trench;
a source region and drain region of a second conductivity type, which are a pair of regions formed at an interval from each
other along a longitudinal direction of the trench in the active region, for providing a channel region of a first conductivity
type for a region therebetween; and

a floating gate consisting of a single layer striding across the source region and the drain region, projecting beyond the
projecting portion in a manner not overlapping the projecting portion, wherein

an aspect ratio of the buried film is 2.3 to 3.67.

US Pat. No. 9,276,184

LED MODULE

ROHM CO., LTD., Kyoto (J...

20. An LED module comprising:
an LED chip;
a lead group including a plurality of individual leads that are spaced apart from each other, the plurality of individual
leads including a first lead, a second lead, a third lead and a fourth lead, the LED chip being mounted on the first lead;
and

a resin package partly covering the lead group;
wherein the lead group forms a first mounting terminal, a second mounting terminal, a third mounting terminal and a fourth
mounting terminal each exposed from the resin package,

wherein the first mounting terminal and the second mounting terminal are spaced apart from each other in a first direction,
the third mounting terminal is spaced apart from the first mounting terminal in a second direction perpendicular to the first
direction, and the fourth mounting terminal is spaced apart from the second mounting terminal in the second direction,

wherein the first mounting terminal is formed by a part of the first lead, the second mounting terminal is formed by a part
of the second lead, the third mounting terminal is formed by a part of the third lead, and the fourth mounting terminal is
formed by a part of the fourth lead, and

wherein at least one of the second lead, the third lead and the fourth lead has a concave edge facing the LED chip.

US Pat. No. 9,203,046

ORGANIC ELECTROLUMINESCENT DEVICE AND PRODUCTION PROCESS THEREOF

Junji Kido, Yonezawa-shi...

1. An organic electroluminescent device consisting of the following, in order:
a transparent substrate;
a transparent anode layer;
a hole transportation layer consisting of an arylamine;
an organic structure consisting of at least one light-emissive layer or at least one light-emissive unit having at least one
light-emissive layer;

a low resistance electron-transporting layer consisting of cesium and an organic compound;
an organometallic complex-containing layer including an organometallic complex compound containing at least one metal ion
selected from the group consisting of an alkali metal ion, an alkaline earth metal ion and a rare earth metal ion;

a reducing reaction generating layer; and
a transparent cathode layer
wherein the reducing reaction generating layer is a layer produced by depositing aluminum on the organometallic complex-containing
layer, thereby causing an oxidation-reduction reaction therebetween; and wherein the cathode consists of ITO.

US Pat. No. 9,064,927

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a lower electrode formed over a surface of a semiconductor substrate;
a first capacitance film formed on a surface of the lower electrode;
an intermediate electrode formed on a surface of the first capacitance film over at least a portion of the tower electrode,
at least the first capacitance film being interposed between the intermediate electrode and at least the portion of the lower
electrode;

a second capacitance film formed on a surface of the intermediate electrode such that the intermediate electrode is interposed
between the first capacitance film and the second capacitance film, the first capacitance film and the second capacitance
film being of different types; and

an upper electrode formed on a surface of the second capacitance film over the intermediate electrode, at least the second
capacitance film being interposed between the upper electrode and at least a portion of the intermediate electrode,

wherein an outer edge portion of the first capacitance film and an outer edge portion of the second capacitance film are vertically
disposed to coincide with an edge portion of the tower electrode.

US Pat. No. 9,396,626

LED DRIVING DEVICE, ILLUMINATOR, AND LIQUID CRYSTAL DISPLAY DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A light emitting diode (LED) driving device, comprising:
a direct current/direct current (DC/DC) controller, controlling an output segment that is used to generate an output voltage
from an input voltage and supply the output voltage to an LED;

an output current driver, generating an output current of the LED; and
an output discharging circuit, performing a discharge of the output voltage when a generation action of the output voltage
and the output current is stopped,

wherein the DC/DC controller, the output current driver, and the output discharging circuit are integrated, and the DC/DC
controller determines whether to generate the output voltage based on a shutdown signal;

wherein the output current driver determines whether to generate the output current based on the shutdown signal;
wherein the output discharging circuit is based on the shutdown signal to perform the discharge of the output voltage when
the generation action of the output voltage and the output current is stopped;

wherein the output discharging circuit comprises:
a first N-channel MOS FET, comprising a drain connected to an applied end of the output voltage and a source connected to
a ground end; and

a NAND gate, comprising an output end connected to a gate of the first N-channel MOS FET, a first input end connected to an
applied end of an enable signal, and a second input end connected to an applied end of the shutdown signal, wherein the shutdown
signal is generated in the LED driving device.

US Pat. No. 9,391,549

MOTOR DRIVING DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A motor driving device, comprising:
a clock oscillator configured to generate a clock signal; and
a logic unit configured to receive the clock signal, control conduction of a 3-phase brushless direct current (DC) motor,
and generate a revolutions per minute (RPM) detection signal,

wherein the clock oscillator is configured to switch an oscillation frequency of the clock signal depending on an RPM command
signal input to set a target RPM of the 3-phase brushless DC motor, and

wherein the clock oscillator is configured to set the oscillation frequency of the clock signal as a first oscillation frequency
when the RPM command signal has a signal value for an operation time of the motor, and to set the oscillation frequency of
the clock signal as a second oscillation frequency lower than the first oscillation frequency when the RPM command signal
has a signal value for a stoppage time of the motor.

US Pat. No. 9,324,857

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a p-type semiconductor layer;
n-type column regions arranged in a mutually spaced-apart relationship along a predetermined direction parallel to a front
surface of the semiconductor layer, each of the n-type column regions formed of thermal donors exhibiting an n-type property;

a p-type column region of the semiconductor layer interposed between the n-type column regions adjoining to each other, the
n-type column regions configured to form a super-junction structure in the semiconductor layer in cooperation with the p-type
column region;

a channel region of an n-type or p-type selectively formed in a front surface portion of the semiconductor layer to make up
a portion of the front surface of the semiconductor layer;

a source region selectively formed in a front surface portion of the channel region to make up a portion of the front surface
of the semiconductor layer, a conductivity type of the source region being opposite to that of the channel region;

a gate insulator film formed on the front surface of the semiconductor layer; and
a gate electrode formed on the gate insulator film and opposite to the channel region across the gate insulator film,
wherein H+ particles are selectively irradiated on a plurality of portions of the semiconductor layer to form the n-type column regions
formed of thermal donors.

US Pat. No. 9,274,107

MICROCHIP, MEASUREMENT SYSTEM AND METHOD USING THE SAME, AND TEST REAGENT TO BE USED FOR MICROCHIP

Rohm Co., Ltd., Kyoto (J...

1. A measurement method for measuring a plurality of types of objects to be measured using a microchip, the method comprising:
providing a microchip comprising:
a reagent retaining portion; and
a detecting portion, wherein
said reagent retaining portion includes a plurality of types of test reagents corresponding respectively to said plurality
of types of objects to be measured,

the plurality of types of test reagents being such that a plurality of time courses for a change in detected values at said
detecting portion caused by a reaction between each of said test reagents and a corresponding respective one of said objects
to be measured are different from one other, wherein the time courses represent manners of change in the detected values over
time,

the method further comprising detecting whether the plurality of types of objects is contained in a sample by using the plurality
of types of test reagents and a difference between the time courses for changes in detected values at said detection portion.

US Pat. No. 9,195,933

ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE INCLUDING THE SAME

Rohm Co., Ltd., Kyoto (J...

1. An electronic circuit comprising:
a signal processing circuit including a storage unit to hold information in a non-volatile manner;
a voltage processing circuit receiving voltage from a voltage source, generating power supply voltage based on the received
voltage for said signal processing circuit, and supplying said power supply voltage to said signal processing circuit; and

a delay circuit receiving said power supply voltage and supplying a voltage signal to said signal processing circuit after
said power supply voltage is supplied to said signal processing circuit,

after having received said power supply voltage from said voltage processing circuit, said signal processing circuit updating
said information in response to said voltage signal and holding the updated information in said storage unit in the non-volatile
manner.

US Pat. No. 9,160,270

OPERATIONAL AMPLIFIER, MOTOR DRIVE DEVICE, MAGNETIC DISK STORAGE DEVICE, AND ELECTRONIC APPLIANCE

ROHM CO., LTD., (JP)

7. A motor drive device comprising:
a voice coil motor driver which drives a voice coil motor, wherein
the voice coil motor driver includes:
a driver circuit which generates an output current to the voice coil motor;
an output feedback circuit which monitors the output current to generate a feedback voltage to the driver circuit; and
a back electromotive force monitoring circuit which monitors a back electromotive force generated by the voice coil motor
to generate a speed detection voltage, wherein

the back electromotive force monitoring circuit includes an operational amplifier and generates the speed detection voltage
by the operational amplifier, and

the operational amplifier comprises:
an input stage which generates a first input current and a second input current in accordance with a first input signal and
a second input signal;

an offset adjuster which gives offsets to the first input current and the second input current respectively to generate a
first output current and a second output current;

an output stage which generates an output signal in accordance with the first output current and the second output current;
and

an offset current generator which generates a first offset current and a second offset current in accordance with an offset
adjustment signal, wherein

the offset adjuster gives the offsets to the first input current and the second input current respectively by using the first
offset current and the second offset current, and

the offset adjuster includes:
first to fourth NMOSFETs; and
first to fourth resistors, wherein
a drain of the first NMOSFET is connected to an output terminal of the first output current,
a drain of the second NMOSFET is connected to an input terminal of the first input current,
a drain of the third NMOSFET is connected to an input terminal of the second input current,
a drain of the first NMOSFET is connected to an output terminal of the second output current,
gates of the first NMOSFET and the second NMOSFET are connected to the drain of the second NMOSFET,
gates of the third NMOSFET and the fourth NMOSFET are connected to the drain of the third NMOSFET,
a first terminal of the first resistor is connected to the source of the first NMOSFET and an input terminal of the first
offset current,

a first terminal of the second resistor is connected to the source of the second NMOSFET,
a first terminal of the third resistor is connected to the source of the third NMOSFET,
a first terminal of the fourth resistor is connected to the source of the fourth NMOSFET and an input terminal of the second
offset current, and

each of the second terminals of the first to fourth resistors are connected to a ground terminal.

US Pat. No. 9,590,511

INSULATION TYPE SWITCHING POWER SOURCE APPARATUS

Rohm Co., Ltd., Kyoto (J...

1. An insulation type switching power source apparatus comprising:
a transformer that insulates a primary circuit system and a secondary circuit system from each other and uses a primary winding
and a secondary winding to transform an input voltage into an output voltage,

a switching control device that is disposed in the primary circuit system to drive the primary winding, and
an output monitor device that is disposed in the secondary circuit system to monitor the output voltage,
wherein the transformer includes a first auxiliary winding disposed in the primary circuit system and a second auxiliary winding
disposed in the secondary circuit system besides the primary winding and the secondary winding, a first node of the second
auxiliary winding is connected to one end of the secondary winding, a second node of the second auxiliary winding is connected
to a terminal of the output monitor device, the output monitor device drives the second auxiliary winding to generate an induced
voltage in the first auxiliary winding when the output voltage is smaller than a predetermined threshold value voltage, and
the switching control device temporarily stops driving of the primary winding upon detecting a light load state and resumes
the driving of the primary winding upon detecting the induced voltage in the first auxiliary winding, and

wherein the output monitor device includes: a comparator that compares the output voltage with the predetermined threshold
value voltage to generate an output detection signal, a logic portion that generates a gate signal in accordance with the
output detection signal, and a switch that activates and inactivates an electric current route of the second auxiliary winding
in accordance with the gate signal.

US Pat. No. 9,385,093

CHIP DIODE AND DIODE PACKAGE

Rohm Co., Ltd., Kyoto (J...

1. A chip diode, comprising:
a semiconductor substrate;
a plurality of diode cells formed on the semiconductor substrate, each diode cell of the plurality of diode cells having an
individual diode junction region; and

parallel connection portions provided on the semiconductor substrate and connecting the plurality of diode cells in parallel,
the parallel connection portions including a first electrode formed in one side of the semiconductor substrate and having
at least two extending portions extending only to another side of the semiconductor substrate,

wherein at least two diode junction regions are formed along each of the at least two extending portions,
wherein at least two extending portions are formed to have line symmetry and at least four diode junction regions formed along
the at least two extending portions are formed to have point symmetry and line symmetry in a plane view, and

wherein each of at least the four diode junction regions has an outline and each outline has a line extending obliquely in
a direction in which the extending portion extends in a plane view so that a space is formed in the center of at least the
four diode junction regions.

US Pat. No. 9,379,634

SEMICONDUCTOR DEVICE

Rohm Co., Ltd., Kyoto (J...

1. A semiconductor device comprising:
a first output unit configured to output a first phase;
a second output unit disposed to be stacked on the first output unit and configured to output a second phase different from
the first phase; a controller configured to control the output units, and
a voltage regulator configured to regulate a voltage supplied from outside,whereinthe output unit further includes a high voltage unit and a low voltage unit which is supplied with power having a voltage
lower than that applied to the high voltage unit,
the high voltage unit and the low voltage unit are stacked,
the high voltage unit and the low voltage unit further include wirings and bus bars through which currents flow,
any of the wirings and bus bars of the high voltage unit and any of the wirings and bus bars of the low voltage unit, through
which a current flows in a direction opposite to that of a current flowing through the any of the wirings and bus bars of
the high voltage unit, are disposed to each other in parallel,

each of the output units and the voltage regulator has a switching device that is switchable on and off,
among the output units and the voltage regulator, one having a highest frequency for switching on and off the switching device
is disposed on an outer side in a stacking direction,

the voltage regulator further includes a high voltage unit having a switching device and a low voltage unit having a switching
device and receiving a voltage lower than that applied to the high voltage unit,

a frequency for switching on and off the switching device in the low voltage unit of the voltage regulator is higher than
a frequency for switching on and off the switching device in the high voltage unit of the voltage regulator, and

the low voltage unit of the voltage regulator is disposed on an outer side in a stacking direction.

US Pat. No. 9,343,208

CHIP RESISTOR AND MANUFACTURING METHOD THEREOF

Rohm Co., Ltd., Kyoto (J...

1. A method of manufacturing a chip resistor, comprising:
forming a resistor assembly in which a conductive member including portions separated from each other in a first direction
is provided in a resistance body member; and

dividing the resistor assembly into chip resistors, each of the chip resistors including:
a chip-shaped resistance body formed by a part of the resistance body member;
a pair of main electrodes formed by a part of the conductive member and separated from each other in the first direction;
and

a pair of sub-electrodes formed by a part of the conductive member, separated from each other in the first direction, and
adjacent to the main electrodes in a second direction perpendicular to the first direction with concave portions recessed
in the first direction interposed therebetween, by punching.

US Pat. No. 9,076,938

SEMICONDUCTOR LIGHT-EMITTING DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor light-emitting device comprising:
a substrate including a base and a wiring pattern formed on the base, the base including a first primary surface, a second
primary surface and a first side surface, the first primary surface and the second primary surface being spaced apart from
each other in a first direction, the first side surface being connected to both the first primary surface and the second primary
surface;

an LED chip mounted on the first primary surface of the base; and
a resin package covering the LED chip and including a lens and a foundation portion, the lens being positioned in front of
the LED chip, the foundation portion being closer to the substrate than the lens is in the first direction;

wherein the foundation portion includes a first foundation portion side surface that is flush with the first side surface
of the base, and

wherein the foundation portion includes an end edge spaced apart from the substrate in the first direction, and a length from
the second primary surface to the end edge of the foundation portion is not less than one half a length from the second primary
surface to a center of the lens.

US Pat. No. 9,601,441

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor chip having a passivation film;
a sealing resin layer provided over the passivation film; and
a groove formed in a periphery of a front surface of the semiconductor chip, a width of the groove, as measured in parallel
to the front surface, becomes gradually narrower towards a rear surface of the semiconductor chip, wherein

the sealing resin layer is partly disposed in the groove.

US Pat. No. 9,437,544

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

7. The semiconductor device according to claim 1, wherein the solder ball partly covers the Cu layer such that a portion of a surface of the Cu layer is exposed form the
solder ball.

US Pat. No. 9,384,876

CHIP RESISTOR, MOUNTING STRUCTURE FOR CHIP RESISTOR, AND MANUFACTURING METHOD FOR CHIP RESISTOR

ROHM CO., LTD., Kyoto (J...

1. A chip resistor comprising:
a first electrode;
a second electrode spaced apart from the first electrode in a first direction;
a resistor portion bonded to the first electrode and the second electrode;
a first intermediate layer connected to the first electrode and the resistor portion;
a second intermediate layer connected to the second electrode and the resistor portion; and
a coating film covering the first electrode;
wherein the coating film is made of a material having a higher absorptance of a laser beam of a predetermined wavelength than
that of a material forming the first electrode, and the first intermediate layer contains at least the material forming the
coating film.

US Pat. No. 9,379,085

WIRE BONDING STRUCTURE OF SEMICONDUCTOR DEVICE AND WIRE BONDING METHOD

ROHM CO., LTD., Kyoto (J...

1. A wire bonding structure comprising a wire that comprises:
a first bonding portion bonded to a first bonding target; and
a second bonding portion bonded to a second bonding target;
wherein the first bonding portion includes a front bond portion, a rear bond portion, and an intermediate portion between
the front bond portion and the rear bond portion, the front bond portion being closer to the second bonding portion than the
rear bond portion is, each of the front bond portion and the rear bond portion having a bonding surface and an upper outline
opposite to the bonding surface, the bonding surface being bonded to the first bonding target more strongly than the intermediate
portion is,

wherein the second bonding portion is smaller in bonding length in a longitudinal direction of the wire than the first bonding
portion, wherein the first bonding portion is provided at an end of the wire,

wherein the intermediate portion has an under outline facing the first bonding target and extending from the rear bond portion
to the front bond portion, and the entirety of the under outline of the intermediate portion is closer to the first bonding
target than is the upper outline of each of the front bond portion and the rear bond portion, and

wherein the intermediate portion is smaller in width than each of the front bond portion and the rear bond portion as viewed
in a normal direction of the first bonding target.

US Pat. No. 9,356,024

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor substrate including
an active layer having a first conductivity type in which an element region and a contact region are formed,
a support substrate having a second conductivity type and supporting the active layer, and
a buried insulation layer interposed between the active layer and the support substrate to electrically insulate the active
layer and the support substrate;

a transistor element formed in the element region, the transistor element including a transistor buried impurity layer formed
within the active layer and being spaced apart from a surface of the active layer; and

a substrate contact including
a contact buried impurity layer formed within the contact region, and
a through contact extending from the surface of the active layer to the support substrate, the contact buried impurity layer
corresponding to a same layer as the transistor buried impurity layer,

wherein the transistor element includes a CMOS transistor having first and second transistors,
wherein the first transistor includes a CMOS buried layer as the transistor buried impurity layer, and the first transistor
has the same conductivity type as the first conductivity type of the active layer,

the second transistor includes a CMOS isolation layer as the transistor buried impurity layer, and the second transistor has
an opposite conductivity type to the first conductivity type of the active layer, and

the contact buried impurity layer is formed as the same layer as at least one of the CMOS buried layer and the CMOS isolation
layer.

US Pat. No. 9,136,322

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a semiconductor layer made of a wide bandgap semiconductor and including a gate trench provided with a sidewall and a bottom
wall;

a gate insulating film formed on the sidewall and the bottom wall of the gate trench; and
a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film,
wherein the semiconductor layer includes:
a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for
partially forming the sidewall of the gate trench;

a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor
layer to be in contact with the source region for partially forming the sidewall of the gate trench;

a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor
layer to be in contact with the body region for forming the bottom wall of the gate trench; and

a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench
where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench,

wherein the semiconductor layer further includes:
a source trench having a sidewall and a bottom wall, passing through the first conductivity type source region and the second
conductivity type body region from the front surface and reaching a drift region; and

a second conductivity type second breakdown voltage holding region selectively formed on an edge portion of the source trench
where the sidewall and the bottom wall intersect with each other in a partial region of the source trench.

US Pat. No. 9,121,554

LED LAMP AND LENS UNIT THEREFOR

Rohm Co., Ltd., Kyoto (J...

1. An LED lamp comprising:
a plurality of light source units, each of which includes one or more LED chips and an emission surface through which light
from the LED chips is emitted;

a plurality of substrates, on each of which a predetermined number from the plurality of light source units is mounted; and
a lens unit having a plurality of lenses disposed in front of the emission surfaces of the plurality of light source units,
and a plurality of partition regions, one lens of the plurality of lenses corresponding to one of the plurality of partition
regions,

wherein adjacent lenses among the plurality of lenses are arranged so that no gap is provided between the adjacent lenses,
wherein the plurality of partition regions includes inner partition regions surrounded by outer partition regions, each of
the inner partition regions having the lens formed in an entire surface of each of the inner partition regions, a size of
each of the outer partition regions being larger than a size of each of the inner partition regions,

wherein a center of each of the inner partition regions coincides with a center of each of the lenses included in each of
the inner partition regions, and

wherein each of the outer partition regions are arranged on a periphery of the lens unit, and a center of each of the outer
partition regions is deviated outward from a center of the lens included in each of the outer partition regions.

US Pat. No. 9,070,682

SEMICONDUCTOR DEVICE PACKAGING HAVING PLURALITY OF WIRES BONDING TO A LEADFRAME

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor element;
a lead; and
a wire including a first bonding portion bonded to the semiconductor element, a second bonding portion bonded to the lead
and a bridge portion connecting the first bonding portion and the second bonding portion to each other; wherein,

the semiconductor element includes a first bonding surface, the first bonding portion being bonded to the first bonding surface,
the lead includes a second bonding surface and a third bonding surface forming an angle larger than 180° at an outside of
the lead,

the second bonding surface and the third bonding surface are is provided with a ball bump extending on both the second and
the third bonding surfaces,

the second bonding portion is bonded to the lead via the ball bump,
the bridge portion of the wire includes an elongated section connected to the second bonding portion, and
the second bonding surface lies between the third bonding surface and the position of the semiconductor element in a direction
along which the elongated section of the bridge portion extends as viewed in a normal direction relative to the first bonding
surface.

US Pat. No. 9,490,194

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor element including an element body having an obverse surface and a reverse surface that are opposite to each
other in a thickness direction, the obverse surface being provided with an obverse electrode, the reverse surface being provided
with a reverse electrode;

a lead supporting the semiconductor element; and
a resin package covering the semiconductor element and the lead,
wherein the semiconductor element includes an portion that does not overlap with the lead as viewed in the thickness direction,
the reverse electrode is electrically connected to the lead, and
the reverse electrode is made up of a single metal layer held in contact with the lead.

US Pat. No. 9,368,612

SEMICONDUCTOR DEVICE WITH DIODE TRENCH AND SCHOTTKY ELECTRODE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, having:
a semiconductor layer of a first conductive type;
a body region of a second conductive type formed in the semiconductor layer;
a source region and a drain region of the first conductive type formed in the semiconductor layer so as to be separated from
each other across the body region;

a source trench formed in the semiconductor layer, the source trench penetrating the source region and reaching the body region;
a body contact region formed near a bottom of the source trench and in the semiconductor layer of the first conductive type
that includes the body region, the body contact region being the second conductive type and having a higher impurity concentration
than that of the body region;

a source electrode embedded in the source trench;
a gate electrode facing through a gate insulating layer the body region that lies between the source region and the drain
region;

a first conductive type region for a diode formed in the semiconductor layer;
a diode trench formed in the semiconductor layer that includes the first conductive type region for a diode; and
a schottky electrode forming a schottky junction with the first conductive type region for a diode at inner walls of the diode
trench.

US Pat. No. 9,341,513

PHOTODETECTING ELEMENT HAVING AN OPTICAL ABSORPTION LAYER, PHOTODETECTING DEVICE HAVING AN OPTICAL ABSORPTION LAYER, AND AUTO LIGHTING DEVICE

ROHM CO., LTD., Kyoto (J...

1. A photodetecting element comprising:
an optically transparent substrate;
an optical absorption layer configured to absorb light and formed on the optically transparent substrate, the optical absorption
layer comprising a first surface and a second surface, the first surface facing the optically transparent substrate, the second
surface being opposite to the first surface;

a detecting electrode formed on the optically transparent substrate; and
an insulating film formed so that at least the second surface of the optical absorption layer is covered, wherein
the light is radiated from a back side surface of the optically transparent substrate, and the detecting electrode detects
a current generated from the optical absorption layer.

US Pat. No. 9,312,762

CONTROL CIRCUIT FOR STEP-UP DC/DC CONVERTER

ROHM CO., LTD., Kyoto (J...

1. A control circuit for a step-up DC/DC converter, wherein the step-up DC/DC converter comprises an inductor, a rectifier
diode, an output capacitor, and a switching transistor,
and wherein the switching transistor is configured such that its on resistance is switchable between at least two values,
and wherein the control circuit is configured such that, when the switching transistor is switched from off to on, the control
circuit sets the on resistance of the switching transistor to a first value for a first period immediately after the switching
of the switching transistor, following which the control circuit sets the on resistance of the switching transistor to a second
value that is smaller than the first value for a second period until the switching transistor is turned off, wherein, with
a series resistance component of a loop comprising the output capacitor, the rectifier diode, the switching transistor, and
a ground line as R, with a capacitance component of this loop as C, and with a series inductance component of this loop as
L, the first value is determined such that the relation R/(2?(L/C))>1 is satisfied.

US Pat. No. 9,197,035

SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

ROHM CO., LTD., Kyoto (J...

1. A semiconductor laser device comprising:
an n-type clad layer;
a first p-type clad layer;
a ridge stripe including a second p-type clad layer formed into a ridge stripe shape on the opposite surface of the first
p-type clad layer from the n-type clad layer;

an active layer interposed between the n-type clad layer and the first p-type clad layer; and
a current-blocking layer formed on side surfaces of the ridge stripe,
wherein a first ridge width of a surface of the second p-type clad layer existing on the same side as the first p-type clad
layers is greater than or equal to 3.0 ?m and less than or equal to 4.5 ?m, and a second ridge width of a surface of the second
p-type clad layer existing at the opposite side from the first p-type clad layer is greater than or equal to 2.0 ?m,

wherein the semiconductor laser device is a three-time-grown semiconductor laser device manufactured by forming a p-type contact
layer after the current-blocking layer is formed,

wherein the current-blocking layer is formed of an n-type (Alx4Ga(1?x4))0.51In0.49P (0?x4?1) layer that has a composition satisfying an inequality, 0.7?x4?0.9 and

wherein the n-type clad layer, the first p-type clad layer and the second p-type clad layer are formed of a Alx1Ga (1?x1))0.51In0.49P layer that has a composition where x1>0.7.

US Pat. No. 9,177,508

LIGHT EMITTING APPARATUS

ROHM CO., LTD., (JP)

1. A control circuit configured to control a switching power supply for supplying a driving voltage to a first terminal of
a light-emitting element, and to generate a driving current that flows through the light-emitting element, the control circuit
comprising:
a connection terminal to be connected to a second terminal of the light-emitting element;
a current driving circuit connected to the connection terminal, and configured to generate an intermittent driving current
that corresponds to a dimming pulse signal;

an error amplifier configured to generate a feedback voltage that corresponds to a difference between a detection voltage
that occurs at the connection terminal and a predetermined reference voltage;

a pulse modulator configured to generate a pulse signal having a duty ratio that corresponds to the feedback voltage;
a driver configured to drive a switching element of the switching power supply according to the pulse signal;
a fault detection comparator configured to generate a fault detection signal which is asserted when the detection voltage
is lower than a predetermined threshold voltage;

a forced turn-off circuit configured to instruct the current driving circuit to suspend the generation of the driving current
during a predetermined period after the switching power supply starts to operate; and

a fault detection circuit configured to detect whether or not the fault detection signal is asserted in the predetermined
period.

US Pat. No. 9,104,286

CONTROL CIRCUIT AND CONTROL METHOD FOR TOUCH PANEL TO DETERMINE COORDINATES TOUCHED BY USER

ROHM CO., LTD., (JP)

1. A control circuit configured to control a touch panel comprising a first terminal, a second terminal, a third terminal,
a first resistive film arranged such that one edge thereof is connected to the first terminal and an edge that is opposite
to the aforementioned one edge is connected to the second terminal, and a second resistive film arranged with a gap between
it and the first resistive film such that one edge thereof is connected to the third terminal, the control circuit comprising:
a voltage generating unit configured to apply a predetermined first bias voltage and a predetermined second bias voltage to
the first and second terminals, respectively;

a voltage detection unit configured to detect a panel voltage that occurs at the third terminal;
a current detection unit configured to detect a panel current that flows through a path including the first terminal, the
first resistive film, and the second terminal; and

a coordinate determination unit configured to determine the coordinates touched by the user, based upon the panel voltage
and the panel current thus detected,

and wherein the voltage generating unit comprises a regulator which includes an output transistor provided as an extension
to a path on the first terminal side that includes the first terminal, the first resistive film, and the second terminal,
and which is configured to apply the first bias voltage to the first terminal,

and wherein the current detection unit comprises
a detection transistor connected to the output transistor in a current mirror manner, and
a detection resistor arranged on a path of the detection transistor,
and wherein the current detection unit is configured to output a value that corresponds to a voltage drop that occurs at the
detection resistor as a value which represents the panel current.

US Pat. No. 9,331,008

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor substrate upon which semiconductor elements are formed;
a lower layer wiring pattern which includes a multilayer wiring structure including a plurality of wiring layers and an interlayer
film, in the multilayer wiring structure, the plurality of wiring layers being laminated via the interlayer film, an uppermost
wiring layer of the plurality of wiring layers including a first wiring and a second wiring, the first wiring and the second
wiring disposed separately so as to be flush with each other and the first wiring is fixed at a different potential from that
of the second wiring;

an uppermost interlayer film disposed on the lower layer wiring pattern;
a titanium nitride layer disposed on the uppermost interlayer film to be flat, the titanium nitride layer covering the first
wiring and the second wiring, the titanium nitride layer having a thickness of 800 Å or more;

a pad metal disposed on the titanium nitride layer, the second wiring being insulated from the pad metal; and
vias formed so as to penetrate through the uppermost interlayer film to connect a portion of the titanium nitride layer with
the first wiring at a region facing the pad metal in a vertical direction, the first wiring being electrically connected to
the pad metal through the vias, wherein

the vias are arranged at regular intervals in a first direction and a second direction,
the pad metal includes a wire joining region to which a bonding wire is joined, and
in a plan view, the vias are arranged in only a part of an entire region directly beneath the wire joining region.

US Pat. No. 9,438,128

INSULATION-TYPE SYNCHRONOUS DC/DC CONVERTER

ROHM CO., LTD., Kyoto (J...

1. A synchronous rectifier controller provided on a secondary side of an insulation-type synchronous DC/DC converter, wherein
the DC/DC converter comprises:
a transformer having its primary winding and its secondary winding;
a switching transistor coupled to the primary winding of the transformer;
a synchronous rectifier transistor coupled to the secondary winding of the transformer;
a photo coupler; and
a primary controller coupled to an output of the photo coupler, and configured to control the switching transistor according
to a feedback signal from the photo coupler, and wherein the synchronous rectifier controller comprises:

a driver circuit for switching the synchronous rectifier transistor;
a photo coupler connection terminal coupled to an input side of the photo coupler; and
an error amplifier structured to amplify an error between a voltage detection signal according to an output voltage of the
DC/DC converter and its target voltage, and to draw a current according to the error from an input side of the photo coupler
via the photo coupler connection terminal, wherein the synchronous rectifier controller is packaged in a single module;

wherein a power supply plane for the error amplifier and a power supply plane for the driver circuit are isolated from each
other, and a ground plane for the error amplifier and a ground plane for the driver circuit are isolated from each other;
and

the power supply plane for the error amplifier is supplied with an internal power supply voltage which is generated from a
voltage at the photo coupler connection terminal, and the ground plane of the error amplifier is supplied with a ground voltage
at the secondary side of the DC/DC converter.

US Pat. No. 9,406,757

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a semiconductor layer made of SiC;
a source region formed in the semiconductor layer, the source region forming a surface of the semiconductor layer;
a body region formed in the semiconductor layer, the body region being in contact with the source region from a side of a
back surface of the semiconductor layer;

a drain region formed in the semiconductor layer, the drain region being in contact with the body region from the side of
the back surface of the semiconductor layer;

a gate trench dug down in the semiconductor layer from the surface thereof, the gate trench passing through the source region
and the body region and the deepest portion thereof reaching the drain region;

a gate insulating film formed on an inner surface of the gate trench, the gate insulating film having a bottom portion located
on the bottom surface thereof and a side portion located on the side surface thereof, the thickness of the bottom portion
and the thickness of the side portion being different from each other;

a gate electrode embedded in the gate trench on the gate insulating film;
a source wiring formed on the semiconductor layer and in contact with the source region, the source wiring having a laminating
structure a first source layer formed on the semiconductor layer and a second source layer formed on the first source layer,
the first source layer and the second source layer made of conductive materials different from each other; and

a source trench dug down in the semiconductor layer from the surface thereof, wherein
the first source layer is conformal to a side surface and a bottom surface of the source trench,
wherein the source wiring selectively forms a first junction with respect to the semiconductor layer, the first junction having
a smaller junction barrier than the diffusion potential of a body diode intrinsic in the semiconductor device.

US Pat. No. 9,331,006

SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a substrate made of a semiconductor material and including a main surface formed with a recess;
a wiring layer formed on the substrate; and
three direction sensor elements disposed in the recess and having respective detection reference axes along mutually different
directions,

wherein the recess includes a first hollow and a second hollow, the first hollow accommodating the three direction sensor
elements and including a first bottom surface and a first inclined side surface, the second hollow including a second bottom
surface and a second inclined side surface, the second bottom surface connecting to the first inclined side surface, the second
inclined side surface connecting to the second bottom surface and the main surface,

the substrate is made of a monocrystal silicon,
the main surface is a (100) surface,
the first inclined side surface includes two first inclined faces spaced apart from each other with the first bottom surface
disposed between them, the first hollow including two first upright side surfaces perpendicular to the first bottom surface
and spaced apart from each other with the first bottom surface disposed between them,

the second inclined side surface includes two second inclined faces spaced apart from each other with the second bottom surface
disposed between them, the second hollow including two second upright side surfaces perpendicular to the second bottom surface
and spaced apart from each other with the second bottom surface disposed between them,

the semiconductor device further comprising an acceleration sensor element for acceleration detection in three mutually different
directions, and

the acceleration sensor element is accommodated in the first hollow.

US Pat. No. 9,277,504

MOBILE PHONE

Rohm Co., Ltd., Kyoto (J...

1. A mobile phone comprising:
a telephone function part;
a display unit;
a main processor which controls the telephone function part and the display unit;
a sensor; and
a sensor control sub processor which controls the sensor and communicates information with the main processor,
wherein the main processor can change between an active state for controlling the telephone function part and a power saving
state,

wherein the main processor changes from the power saving state to the active state if it is necessary for the main processor
to change a display on the display unit in response to information from the sensor control sub processor, and changes from
the active state to the power saving state if there is no other task after the display is changed, and

wherein the information transmitted from the sensor control sub processor to the main processor includes information detected
by the sensor while the main processor was in the power saving state.

US Pat. No. 9,142,542

SEMICONDUCTOR DEVICE WITH PROTECTIVE DIODE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device comprising:
a plurality of body regions having a source or an emitter region that is made of an SiC semiconductor, and a drain or a collector
region that is made of an SiC semiconductor;

a well region that is annular when viewed planarly and surrounds the plurality of body regions;
a channel region that is made of an SiC semiconductor and that is disposed between the source or the emitter region and the
drain or the collector region;

a gate that faces the channel region with a gate insulating film disposed between the gate and the channel region; and
a diode formed such that a part thereof faces a region between the well region and a region of the plurality of body regions
nearest the well region, with the gate insulating film disposed therebetween;

wherein the diode is made of the same material as that of the gate and is connected between the gate and the source or the
emitter region.

US Pat. No. 9,509,216

SWITCHING POWER SUPPLY CIRCUIT

Rohm Co., Ltd., Kyoto (J...

1. A switching power supply circuit that generates an output voltage from an input voltage supplied from a power supply, the
switching power supply circuit comprising:
a voltage generation circuit that generates the output voltage from the input voltage by smoothing, with a capacitor, a voltage
produced in an inductor based on turning on and off of a switch element;

a first integration circuit that integrates a switching voltage produced by the turning on and off of the switch element to
generate a first ripple voltage including a first ripple component;

a feedback voltage generation circuit that divides the output voltage to generate a feedback voltage;
a comparison circuit that compares the feedback voltage input to a first input terminal with a reference voltage input to
a second input terminal to output a result of the comparison as a comparison result signal;

a second integration circuit that integrates the comparison result signal to generate a second ripple voltage including a
second ripple component; and

a drive circuit that controls the turning on and off of the switch element based on the comparison result signal,
wherein the first ripple component and the second ripple component are added to the feedback voltage input to the first input
terminal.

US Pat. No. 9,412,711

ELECTRONIC DEVICE

ROHM CO., LTD., Kyoto (J...

1. An electronic device comprising:
an electronic element including an insulating protective layer;
a wire bonded to the electronic element through an opening formed in the protective layer; and
a sealing resin covering the protective layer and the wire,
wherein the electronic element includes a bonding pad to which the wire is bonded,
the bonding pad includes a Pd layer,
the wire has a bonding portion that is circular in plan view, and the bonding portion directly contacts a surface of the Pd
layer,

the surface of the Pd layer has a maximum height difference of 40 nm or less,
the bonding portion of the wire has an inwardly descending annular upper surface that is disposed higher with respect to the
electronic element than an upper surface of the protective layer, and

the bonding pad includes an extended part surrounding a lower part of the bonding portion of the wire, the extended part including
an inner face and an outer face, the inner face being closer to the lower part of the bonding portion than is the outer face,
the outer face directly contacting the sealing resin.

US Pat. No. 9,362,352

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a first-conductivity-type semiconductor layer including
an active region in which a transistor, having a plurality of impurity regions, is formed, and
a marginal region surrounding an outer periphery of the active region;
a second-conductivity-type channel layer formed between the active region and the marginal region so as to form a front surface
of the semiconductor layer;

at least one gate trench formed in the active region to extend from the front surface of the semiconductor layer through the
channel layer;

a gate insulation film formed on an inner surface of the at least one gate trench;
a gate electrode formed inside the gate insulation film in the at least one gate trench;
at least one isolation trench arranged between the active region and the marginal region to surround the outer periphery of
the active region and formed to extend from the front surface of the semiconductor layer through the channel layer, the at
least one isolation trench having a depth equal to a depth of the at least one gate trench; and

at least one dummy cell arranged at an outer most part of the active region to form an outer edge of a lattice of a plurality
of unit cells, and not given a function of the transistor,

wherein the at least one isolation trench includes a plurality of isolation trenches differing in perimeter from one another,
and

wherein a pitch of the plurality of isolation trenches decreases gradually from the active region to the marginal region to
stably widen a depletion layer, which is generated from the at least one dummy cell, even in a position relatively distant
from the at least one dummy cell.

US Pat. No. 9,245,956

ELECTRONIC CIRCUIT COMPRISING UNIPOLAR AND BIPOLAR DEVICES

ROHM CO., LTD., Kyoto (J...

1. An electronic circuit comprising:
a bipolar device including a PN junction diode;
a unipolar device, including a Schottky barrier diode, connected in parallel to the bipolar device;
a first connection metal member having a first inductance, the first connection metal member having a first end to which a
cathode of the PN junction diode is connected and a second end to which a cathode of the Schottky barrier diode is connected;

a second connection metal member having a second inductance, the second connection member having a third end and a fourth
end, the third end being connected to the cathode of the Schottky barrier diode; and

an output line connected to the fourth end of the second connection member, the output line being electrically connected to
the cathode of the PN junction diode via a first electric path that is formed by the first and second connection metal members,
and that has a sum of the first and second inductances, the output line being electrically connected to the cathode of the
Schottky barrier diode via a second electric path that is formed by the second metal member and exclusive of the first metal
member, and that has the second inductance.

US Pat. No. 9,402,130

WIND NOISE REDUCING CIRCUIT

ROHM CO., LTD., Kyoto (J...

1. A wind noise reducing circuit configured to receive a first channel audio signal acquired via a first channel microphone
and a second channel audio signal acquired via a second channel microphone, the wind noise reducing circuit comprising:
a high-pass filter configured to reduce a low-frequency component of the first channel audio signal and a low-frequency component
of the second channel audio signal; and

a control circuit configured to detect a wind noise magnitude based on at least one from among the first channel audio signal
and the second channel audio signal, and to raise a cutoff frequency of the high-pass filter according to an increase in the
wind noise magnitude thus detected,

wherein the control circuit is configured to set the cutoff frequency of the high-pass filter to a predetermined minimum frequency
fMIN when the wind noise magnitude is smaller than a predetermined minimum value MIN,

and wherein the control circuit is configured to gradually raise the cutoff frequency when the wind noise magnitude becomes
greater than the minimum value MIN, and a slope of the cutoff frequency gradually increases and subsequently gradually decreases
with increasing the wind noise magnitude, and wherein the control circuit comprises a detection subtractor structured to generate
a difference component of the first channel audio signal and the second channel audio signal, and to detect the wind noise
magnitude based on the difference component thus generated.

US Pat. No. 9,461,533

ELECTRONIC CIRCUIT

ROHM CO., LTD., Kyoto (J...

1. An electronic circuit comprising:
a switching device including a plurality of switching elements that are connected in parallel and chiefly made of SiC;
an overcurrent detecting circuit to detect that an overcurrent is flowing in the switching device; and
an overcurrent protecting circuit to interrupt a current flowing in the switching device when an overcurrent is detected by
the overcurrent detecting circuit, wherein

the overcurrent protecting circuit is arranged such that, at the time of a current interruption, a time interval from a time
when the gate-source voltage or gate-emitter voltage of the switching device lowers to such a voltage that the temperature
characteristics of the on-resistance of the switching device become negative to a time when the drain current or collector
current of the switching device reaches 2% of the saturation current thereof is 500 [nsec] or less.

US Pat. No. 9,362,294

SEMICONDUCTOR DEVICE INCLUDING AN ELECTRODE LOWER LAYER AND AN ELECTRODE UPPER LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

ROHM CO., LTD., Kyoto (J...

1. A semiconductor device, comprising:
a ferroelectric film including PZT;
an electrode stacked on the ferroelectric film;
the electrode including a multi-layer structure of an electrode lower layer in contact with the ferroelectric film and an
electrode upper layer stacked on the electrode lower layer;

the electrode upper layer including a conductive material having Titanium and Nitrogen; and
a hydrogen barrier film covering surfaces of the ferroelectric film and the electrode;
wherein an upper surface of the electrode upper layer is smoother, relatively, than an upper surface of the ferroelectric
film;

wherein the upper surface of the ferroelectric film is smoother, relatively, than the upper surface of the electrode lower
layer;

wherein an opening is fabricated as a via hole at the hydrogen barrier film;
wherein a barrier metal is disposed covering a surface of the opening;
wherein a via plug is disposed filling the barrier metal;
wherein an interface between the barrier metal and the via plug is placed under a surface of the hydrogen barrier film in
a vertical direction; and

wherein the interface is flat.

US Pat. No. 9,293,573

NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

ROHM CO., LTD., Kyoto (J...

1. A nitride semiconductor device, comprising:
an electron transport layer made of a nitride semiconductor;
an electron supply layer layered on the electron transport layer, the electron supply layer being made of a nitride semiconductor
including Al and having an Al composition different from that of the electron transport layer;

a source electrode and a drain electrode disposed on the electron supply layer with a gap therebetween;
a gate insulating film covering a surface of the electron supply layer between the source and the drain electrode;
a mpassivation film covering a surface of the gate insulating film and having an opening between the source electrode and
the drain electrode, the opening being at a distance from the source electrode and the drain electrode; and a gate electrode
disposed in the opening in the passivation film and in contact with the gate insulating film, the gate electrode having a
main gate body facing the electron supply layer through the gate insulating film,

wherein the gate insulating film is a multilayer gate insulating film including a first insulating layer in contact with the
electron supply layer, and a second insulating layer layered onto the first insulating layer at least under a lowest bottom
surface of the main gate body of the gate electrode,

wherein a first portion of the first insulating layer is disposed directly under, and in contact with, a first bottom surface
of the source electrode and a second portion of the insulating layer is disposed directly under and in contact with a first
bottom surface of the drain electrode and a second bottom surface of the source electrode and a second bottom surface of the
drain electrode are in contact with the electron supply layer, respectively, and

wherein portions of the second insulating layer are disposed on portions of top surfaces of the source electrode and the drain
electrode, respectively.

US Pat. No. 9,166,111

LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE

ROHM CO., LTD., Kyoto (J...

1. A light-emitting element comprising:
a first conductivity type semiconductor layer having a stepped portion formed on an end portion of the first conductivity
type semiconductor layer;

a light-emitting layer stacked on the first conductivity type semiconductor layer excluding the stepped portion;
a second conductivity type semiconductor layer stacked on the light-emitting layer;
a transparent electrode layer, stacked on the second conductivity type semiconductor layer, transparent with respect to an
emission wavelength of light emitted from the light-emitting layer;

a reflecting electrode layer, stacked on the transparent electrode layer, reflecting light transmitted through the transparent
electrode layer;

an insulating layer stacked on the reflecting electrode layer and including an extensional portion, the extensional portion
covering outer end surfaces of respective ones of the light-emitting layer, the second conductivity type semiconductor layer,
the transparent electrode layer and the reflecting electrode layer in a plan view as viewed from a thickness direction of
the first conductivity type semiconductor layer, and the stepped portion of the first conductivity type semiconductor layer;

a first electrode layer stacked on the insulating layer;
a second electrode layer stacked on the insulating layer in a state isolated from the first electrode layer;
a plurality of insulating tube layers, discretely arranged in the plan view, passing through the reflecting electrode layer,
the transparent electrode layer, the second conductivity type semiconductor layer and the light-emitting layer continuously
from the insulating layer and reaching the first conductivity type semiconductor layer;

first contacts, continuous from the first electrode layer, connected to the first conductivity type semiconductor layer through
the insulating layer and the insulating tube layers; and

second contacts, continuous from the second electrode layer, passing through the insulating layer to be connected to the reflecting
electrode layer, the second contacts having a wider width than that of the first contacts.