US Pat. No. 9,282,256

SYSTEM AND METHOD FOR HDR IMAGING

OmniVision Technologies, ...

1. A method of generating an image, the method comprising:
capturing a first sub-image during a first exposure with a first pixel subset of an image sensor;
capturing a second sub-image during a second exposure with a second pixel subset of the image sensor, the second exposure
being longer than the first exposure;

capturing a third sub-image during a third exposure with a third pixel subset of the image sensor, the third exposure longer
than the second exposure;

capturing a fourth sub-image during a fourth exposure with a fourth pixel subset of the image sensor, the fourth exposure
longer than the third exposure, wherein the first, second, third, and fourth pixel subsets are disposed in a repeating pattern,
and wherein the first, second, third, and fourth exposure periods start at a same initiation time;

selecting a preferred exposure between the first, second, third and fourth exposures by analyzing the first, second, third,
and fourth sub-images;

capturing a full-resolution image at the preferred exposure, wherein the full-resolution image is captured by the first, second,
third, and fourth pixel subsets simultaneously; and

generating a final HDR output image based on the sub-images and the full-resolution image.

US Pat. No. 9,386,240

COMPENSATION FOR DUAL CONVERSION GAIN HIGH DYNAMIC RANGE SENSOR

OmniVision Technologies, ...

1. An image sensor comprising:
a pixel array;
control circuitry coupled to the pixel array for facilitating image acquisitions, wherein pixels in the pixel array are configured
to sequentially generate a first reset signal at a first conversion gain, a second reset signal at a second conversion gain
that is larger than the first conversion gain, a high gain image signal at the second conversion gain, and a low gain image
signal at the first conversion gain, in that order; and

a successive-approximation-register (“SAR”) analog-to-digital-converter (“ADC”) including input stage circuitry with a first
selectable input and a second selectable input, wherein the SAR ADC is coupled to sequentially receive the first reset signal,
the second reset signal, the high gain image signal, and the low gain image signal, in that order, and wherein the input stage
circuitry is configured to select the first selectable input when receiving the first reset signal and the low gain image
signal and configured to select the second selectable input when receiving the second reset signal and the high gain image
signal.

US Pat. No. 9,484,370

ISOLATED GLOBAL SHUTTER PIXEL STORAGE STRUCTURE

OmniVision Technologies, ...

1. A pixel cell, comprising:
a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the
photodiode;

a global shutter gate transistor, wherein a portion of the global shutter gate transistor is disposed in the semiconductor
material and coupled to the photodiode to selectively deplete the image charge from the photodiode;

a storage transistor, wherein a portion of the storage transistor is disposed in the semiconductor material to store the image
charge; and

an optical isolation structure disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall
of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor,
wherein the optical isolation structure includes a deep trench isolation structure formed in the semiconductor material, wherein
the deep trench isolation structure is filled with tungsten, wherein the optical isolation structure further includes a P+
passivation formed over an interior sidewall of the deep trench optical isolation structure between the tungsten and the semiconductor
material.

US Pat. No. 9,432,589

SYSTEMS AND METHODS FOR GENERATING HIGH DYNAMIC RANGE IMAGES

OmniVision Technologies, ...

1. A method for determining a pixel value in a high dynamic range image based on first and second input images of different
brightness, comprising:
obtaining a first input pixel intensity of a first pixel in the first input image and a second input pixel intensity of a
corresponding pixel in the second input image, each of the first and second input images having lower dynamic range than the
high dynamic range image;

determining a first combination weight for the first input pixel intensity and a second combination weight for the second
input pixel intensity, each of the first and second combination weights being a continuous function of the first and second
input pixel intensities, the function having predefined values for a plurality of pairs of a predefined first pixel intensity
and a predefined second pixel intensity, the predefined values being defined by consideration of at least one quality metric;

obtaining a first brightness parameter associated with the first input image and a second brightness parameter associated
with the second input image;

correcting for sensor-induced errors in at least one of the first and second brightness parameters; and
calculating the pixel value in the high dynamic range image as a weighted average of the first and second input pixel intensities
using the first and second combination weights, wherein the step of calculating comprises scaling, based on the first and
second brightness parameters, the first and second input pixel intensities to a common image brightness.

US Pat. No. 9,344,658

NEGATIVE BIASED SUBSTRATE FOR PIXELS IN STACKED IMAGE SENSORS

OmniVision Technologies, ...

1. A pixel cell, comprising:
a photodiode disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response
to light incident upon the photodiode;

a transfer transistor disposed within the first substrate of the first semiconductor chip and coupled to the photodiode to
transfer the image charge from the photodiode;

a bias voltage generation circuit disposed within a second semiconductor chip for generating a bias voltage, wherein the bias
voltage generation circuit is coupled to the first substrate of the first semiconductor chip to bias the photodiode with the
bias voltage, wherein the bias voltage is a negative voltage with respect to a ground voltage of a second substrate of the
second semiconductor chip; and

a floating diffusion disposed within the second substrate of the second semiconductor chip such that the first substrate in
which the photodiode is disposed is biased at the negative voltage with respect to the ground voltage of the second substrate
in which the floating diffusion is disposed, wherein the transfer transistor is coupled to transfer the image charge from
the photodiode on the first semiconductor chip to the floating diffusion on the second semiconductor chip.

US Pat. No. 9,197,874

SYSTEM AND METHOD FOR EMBEDDING STEREO IMAGERY

OmniVision Technologies, ...

1. A method for embedding stereo imagery, comprising:
transforming a foreground stereo image, extracted from a source stereo image captured by a first stereo camera, from scale
associated with the first stereo camera to scale associated with a second stereo camera, to form a transformed foreground
stereo image; and

embedding the transformed foreground stereo image into a target stereo image, captured by the second stereo camera, to form
an embedded stereo image.

US Pat. No. 9,484,373

HARD MASK AS CONTACT ETCH STOP LAYER IN IMAGE SENSORS

OmniVision Technologies, ...

1. An image sensor, comprising:
a semiconductor material including a photodiode disposed in the semiconductor material;
a transfer gate disposed proximate to an edge of the photodiode and positioned to extract image charge from the photodiode;
a dielectric layer disposed between the semiconductor material and the transfer gate; and
a hard mask disposed in an encapsulation layer, wherein lateral bounds of the hard mask are coextensive with lateral bounds
of the transfer gate, and wherein a first contact trench extends through the encapsulation layer and through the dielectric
layer and contacts the semiconductor material, and wherein a second contact trench extends through the encapsulation layer
and through the hard mask and contacts the transfer gate.

US Pat. No. 9,467,665

COLOR FILTER ARRAY PATTERNS FOR REDUCTION OF COLOR ALIASING

OmniVision Technologies, ...

1. A color filter array comprising:
a plurality of tiled minimal repeating units, each minimal repeating unit comprising:
a set of individual filters grouped into an array of M rows by N columns, wherein each set of individual filters includes
a plurality of individual filters having at least first, second, third, and fourth spectral photoresponses;

wherein if M equals N at least two directions within each minimal repeating unit include individual filters having all the
spectral photoresponses, the at least two directions being selected from a set of directions consisting of row, column, major
diagonal and minor diagonal of the minimal repeating unit; and

wherein if M does not equal N at least two directions within each of one or more N×N or M×M cells within the minimal repeating
unit include individual filters having all the spectral photoresponses, the at least two directions being selected from a
set of directions consisting of row, column, major diagonal and minor diagonal of each N×N or M×M cells.

US Pat. No. 9,438,779

WIDE-ANGLE CAMERA USING ACHROMATIC DOUBLET PRISM ARRAY AND METHOD OF MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A wide-angle camera, comprising:
a sensor having a plurality of pixel sub-arrays;
an array of optical elements mounted to a first side of a substrate, each of the optical elements being capable of forming
an image of a field of view onto a different one of the pixel sub-arrays; and

an array of achromatic doublet prisms mounted to a second side of the substrate, each of the achromatic doublet prisms being
aligned to provide a viewing angle with a different one of the optical elements;

wherein each achromatic doublet prism of the array of achromatic doublet prisms is aligned to provide a viewing angle with
a different optical element of the array of optical elements, such that the sensor captures a wide-angle field of view while
having a compact format.

US Pat. No. 9,391,111

STACKED INTEGRATED CIRCUIT SYSTEM WITH THINNED INTERMEDIATE SEMICONDUCTOR DIE

OmniVision Technologies, ...

1. An intermediate integrated circuit die of a stacked integrated circuit system, comprising:
an intermediate semiconductor substrate including dopants having a first polarity, wherein the intermediate semiconductor
substrate has a first side and a second side, wherein the second side is opposite the first side, wherein the intermediate
semiconductor substrate is thinned from the second side;

a first well disposed in the intermediate semiconductor proximate to the first side, wherein the first well includes dopants
having the first polarity;

a second well disposed in the intermediate semiconductor substrate proximate to the first side, wherein the second well includes
dopants having a second polarity;

a deep well disposed in the intermediate semiconductor substrate beneath the first and second wells, wherein the first and
second wells are disposed between the first side and the deep well, wherein the deep well includes dopants having the second
polarity; and

an additional implant of dopants having the first polarity implanted into the intermediate semiconductor substrate between
the deep well and the second side of the intermediate semiconductor substrate to narrow a depletion region overlapped by the
additional implant of dopants, wherein the depletion region is between the deep well and the second side of the intermediate
semiconductor substrate.

US Pat. No. 9,350,906

ENCAPSULANT MODULE WITH OPAQUE COATING

OMNIVISION TECHNOLOGIES, ...

1. An encapsulant module for an image sensor device, comprising:
an outer frame comprising an enclosing wall and a first opening open to an exterior of the encapsulant module surrounded by
the enclosing wall;

a set of lenses directly connecting to the enclosing wall and configured with an aperture module;
an opaque coating overlying the enclosing wall and the aperture module, wherein the opaque coating comprises a coating opening
aligned with an aperture opening of the aperture module such that the opaque coating shields parts of regions over the set
of lenses; and

a flat transparent substrate, between the set of lenses and the first opening, wherein the footprint of the transparent substrate
is substantially the same as that of the set of lenses.

US Pat. No. 9,379,153

METHOD FOR FORMING IMAGE SENSING DEVICE

VisEra TECHNOLOGIES COMPA...

1. A method for forming an image sensing device, comprising:
providing a molding apparatus;
disposing a lens in the molding apparatus;
injecting an injection material into a chamber of the molding apparatus to form a shell which is connected to the lens; and
assembling the shell with an image sensing element,
wherein the lens is formed before injecting the injection material into the chamber; and
wherein the injection material is doped with a plurality of metal particles.

US Pat. No. 9,304,741

APPARATUS, METHOD AND SYSTEM FOR RANDOM NUMBER GENERATION

OmniVision Technologies, ...

1. An apparatus comprising:
one or more cells each including a respective source follower transistor, wherein a first cell of the one or more cells includes
a first source follower transistor;

a detector module coupled to the one or more cells, the detector module including circuit logic to receive a first signal
from the first cell and, in response to a pulse of the first signal, to indicate a detection of a first random telegraph noise
event in the first source follower transistor;

a counter module coupled to the detector module, the counter module including circuit logic to perform a first count update
in response to the indicated detection of the first random telegraph noise event and, based on the first count update, to
communicate a number corresponding to a plurality of random telegraph noise events; and

control logic to transition the apparatus between a first mode and a second mode, the first mode for generating the number
corresponding to the plurality of random telegraph noise events, wherein the second mode is for capturing an image with the
one or more cells.

US Pat. No. 9,304,299

FOUR-PIECE ALL-ASPHERIC ADAPTER FISHEYE LENS

OmniVision Technologies, ...

1. A four-piece all-aspheric adapter fisheye (FPAAAF) lens, comprising:
a negative meniscus lens, a biconcave lens, a positive meniscus lens, and a biconvex lens;
the biconcave lens being between the negative meniscus lens and the positive meniscus lens; the positive meniscus lens being
between the biconcave lens and the biconvex lens;

the negative meniscus lens, the biconcave lens, the positive meniscus lens, and the biconvex lens being coaxial and arranged
with an exit pupil to cooperatively generate an image with a camera lens that has greater field of view than the camera lens
alone when the exit pupil is coplanar and coaxial with an entrance pupil of the camera lens; and

each of the negative meniscus lens, the biconcave lens, the positive meniscus lens, and the biconvex lens having an aspheric
object-side surface and an aspheric image-side surface.

US Pat. No. 9,147,776

NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT

OmniVision Technologies, ...

1. An image sensor pixel, comprising: a photodiode region having a first polarity doping type disposed in a semiconductor
layer; a pinning surface layer having a second polarity doping type disposed over the photodiode region in the semiconductor
layer, wherein the second polarity is opposite from the first polarity;
a first polarity charge layer disposed proximate to the pinning surface layer over the photodiode region;
a contact etch stop layer disposed over the photodiode region proximate to the first polarity charge layer, wherein the first
polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity
charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer;

a metal stack layer that includes a plurality of metal interconnects disposed directly over the contact etch stop layer to
provide electrical connections; and

a passivation layer disposed over the photodiode region between the pinning surface layer and the contact etch stop layer,
wherein the passivation layer is disposed over the photodiode region between the pinning surface layer and the first polarity
charge layer.

US Pat. No. 9,282,265

CAMERA DEVICES AND SYSTEMS BASED ON A SINGLE IMAGE SENSOR AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A camera device, comprising:
a single imaging sensor;
a plurality of imaging objectives associated with the single imaging sensor; and
a plurality of dedicated image areas within the single imaging sensor, each of the dedicated image areas corresponding to
a respective one of the imaging objectives, such that images formed by each of the imaging objectives may be recorded by the
single imaging sensor, wherein, when viewed along a direction perpendicular to the single imaging sensor, the image areas
are separated from each other by a light absorbing spacer portion including a light absorbing coating.

US Pat. No. 9,136,267

STANDARD CELL GLOBAL ROUTING CHANNELS OVER ACTIVE REGIONS

OmniVision Technologies, ...

1. An integrated circuit chip, comprising:
a plurality of complementary metal oxide semiconductor (CMOS) integrated circuit cells arranged in a semiconductor layer,
wherein each one of the CMOS integrated circuit cells includes first and second active regions disposed in the semiconductor
layer, wherein the first active region is doped with dopants having a first polarity, and wherein the second active region
is doped with dopants having a second polarity;

a first power rail included in metal layers disposed over the semiconductor layer and routed along boundaries of the CMOS
integrated circuit cells proximate to the first active regions of the CMOS integrated circuit cells;

a second power rail included in the metal layers disposed over the semiconductor layer and routed over second active regions
of the CMOS integrated circuit cells; and

global routing channels included in the metal layers over the semiconductor layer and routed over the second active regions
of the CMOS integrated circuit cells such that the second power rail is disposed the metal layers between the global routing
channels and the first power rail, wherein the global routing channels are coupled between the CMOS integrated circuit cells
to couple the CMOS integrated circuit cells together globally in the integrated circuit chip.

US Pat. No. 9,119,544

ACQUIRING GLOBAL SHUTTER-TYPE VIDEO IMAGES WITH CMOS PIXEL ARRAY BY STROBING LIGHT DURING VERTICAL BLANKING PERIOD IN OTHERWISE DARK ENVIRONMENT

OmniVision Technologies, ...

1. A video producing method comprising:
introducing a complementary metal oxide semiconductor (CMOS) pixel array into a dark environment that has substantially no
ambient light; and

acquiring a plurality of image frames, including a first image frame and a second image frame of an object in the dark environment
with the CMOS pixel array, wherein acquiring the plurality of image frames comprises:

during the first image frame:
resetting each row of pixels of the CMOS pixel array sequentially, and one row at a time, from a first row to a last row;
and

reading each row of pixels of the CMOS pixel array sequentially, and one row at a time, from the first row to the last row,
wherein the resetting of the last row during the first image frame is performed before the reading of the first row during
the first image frame;

during the second image frame:
resetting each row of pixels of the CMOS pixel array sequentially, and one row at a time, from the first row to the last row;
and

reading each row of pixels of the CMOS pixel array sequentially, and one row at a time, from the first row to the last row
wherein the resetting of the last row during the second image frame is completed before the reading of the first row during
the second image frame;

controlling a light source to substantially illuminate the dark environment during a portion of a vertical blanking period,
wherein the vertical blanking period is between the reading of the last row of pixels during the first image frame and the
reading of the first row of pixels during the second image frame, and wherein the portion of the vertical blanking period
is between the resetting of the last row of pixels during the second image frame and the reading of the first row of pixels
during the second image frame; and

controlling the light source to not substantially illuminate the dark environment:
(a) between the reading of the first row of pixels and the reading of the last row of pixels during the first image frame;
and

(b) between the reading of the first row of pixels and the reading of the last row of pixels during the second image frame.

US Pat. No. 9,326,000

METHOD AND SYSTEM FOR STILL IMAGE ENCODING AND RANDOM ACCESS DECODING

OmniVision Technologies (...

1. A JPEG encoding method, comprising:
splitting an image into 8×8 pixel blocks and grouping the 8×8 pixel blocks into a number of minimum coded units according
to a format of the image, such that each of the minimum coded units consists of a constant number of 8×8 pixel blocks;

scanning the minimum coded units in a raster scan order, by subjecting each of the minimum coded units sequentially to forward
discrete cosine transformation for converting the 8×8 pixel blocks of each of the minimum coded units into discrete cosine
transformation (DCT) coefficients, quantization of the DCT coefficients according to a quantization table to obtain quantized
DCT coefficients, zigzag scanning the quantized DCT coefficients to obtain sequenced DCT coefficients sequenced from a lowest
frequency to a highest frequency, and entropy encoding for converting the sequenced DCT coefficients into bitstreams in correspondence
with the minimum coded units, wherein the sequenced DCT coefficients include AC coefficients and DC coefficients, and the
entropy encoding is accomplished by run-length encoding the AC coefficients while not performing differential pulse-code modulation
on the DC coefficients;

aligning the bitstreams by byte stuffing to obtain byte-aligned bitstreams in correspondence with the minimum coded units;
generating compression data of a special JPEG file from the byte-aligned bitstreams;
acquiring, in the raster scan order, positions of the byte-aligned bitstreams in correspondence with the minimum coded units
in the compression data of the special JPEG file, wherein a position of a first byte-aligned bitstream is recorded as zero;
and

encoding the positions by a run-length coding and compressing the encoded positions by a Huffman coding to establish a position
table.

US Pat. No. 9,172,869

IMAGE DATA AGGREGATING HIGH DYNAMIC RANGE IMAGING SYSTEMS AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. A method for generating a virtual long exposure image data set, comprising:
generating N image data sets from an array of photodiodes, each of the N image data sets being generated with a different
respective exposure time duration of the array of photodiodes, N being an integer greater than one;

aggregating the N image data sets to obtain the virtual long exposure image data set, the step of aggregating the N image
data sets including summing the N image data sets;

generating N desired exposure times based at least in part on an average value of one of the N image data sets;
generating N adjusted exposure times based at least in part on the N desired exposure times; and
generating N subsequent image data sets from the array of photodiodes, the N subsequent image data sets being generated with
respective exposure time durations of the array of photodiodes according to the N adjusted exposure times;

the step of generating N adjusted exposure times including:
determining a first one of the N adjusted exposure times from a difference between a first one of the N desired exposure times
and a second one of the N desired exposure times, and

determining a second one of the N adjusted exposure times to be equal to the second one of the N desired exposure times.

US Pat. No. 9,369,681

RGBC COLOR FILTER ARRAY PATTERNS TO MINIMIZE COLOR ALIASING

OmniVision Technologies, ...

1. A color filter array comprising:
a plurality of tiled minimal repeating units, each minimal repeating unit including at least:
a first set of filters comprising three or more color filters, the first set including at least one color filter with a first
spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with
a third spectral photoresponse; and

a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein
each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first,
second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any
of the individual filters in the first set;

wherein:
individual filters in the first set of filters are octagonal; and
individual filters in the second set of filters are quadrilateral, wherein at least two sides of each quadrilateral filter
are formed by non-abutting sides of adjacent octagonal filters.

US Pat. No. 9,124,823

IMAGE SENSOR WITH FAST INTRA-FRAME FOCUS

OmniVision Technologies, ...

1. A method of focusing an image sensor, comprising:
scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data;
scanning a second portion of the image frame from the image sensor at a second rate to read image data from the second portion,
wherein the first rate is greater than the second rate;

scanning the first portion of the image frame a second time at the first rate to produce second focus data, wherein the first
rate is N times greater than the second rate, wherein N is greater than or equal to two, and wherein the first portion is
scanned N times for each time the second portion is scanned during a focus operation;

comparing the first focus data and the second focus data; and
adjusting a focus of a lens in response to the comparison of the first focus data and the second focus data.

US Pat. No. 9,443,894

IMAGING PACKAGE WITH REMOVABLE TRANSPARENT COVER

OmniVision Technologies, ...

1. An imaging package, comprising:
an image sensor package formed with a semiconductor substrate;
a removable transparent cover bonded over the image sensor package to cover a first side of the image sensor package, wherein
a lateral dimension of the removable transparent cover along a first direction is larger than a lateral dimension of the image
sensor package along the first direction; and

an overhang portion of the removable transparent cover that extends beyond a lateral side of the image sensor package along
the first direction, wherein the overhang portion includes a notch defined in the removable transparent cover, wherein a portion
of the notch is flush with the lateral side of the image sensor package.

US Pat. No. 9,313,476

PRECHARGED LATCHED PIXEL CELL FOR A TIME OF FLIGHT 3D IMAGE SENSOR

OmniVision Technologies, ...

1. A pixel cell, comprising:
a latch having an input terminal and an output terminal, wherein the latch is coupled to provide a latched output signal at
the output terminal responsive to the input terminal;

a first precharge circuit coupled to precharge the input terminal of the latch to a first level during a reset of the pixel
cell; and

a single photon avalanche photodiode (SPAD) coupled to provide a SPAD signal to the input terminal of the latch in response
to a detection of a photon incident on the SPAD.

US Pat. No. 9,287,308

IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION

OmniVision Technologies, ...

11. An imaging system, comprising:
a pixel array of image sensor pixels, wherein each one of the image sensor pixels includes:
one or more photodiodes disposed in a semiconductor layer;
pixel circuitry disposed in the semiconductor layer coupled to the one or more photodiodes;
a passivation layer disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes;
a single contact etch stop layer disposed over the passivation layer, wherein the single contact etch stop layer defines one
or more isolation regions, wherein there is an absence of material of the single contact etch stop layer in the one or more
isolation regions defined in the single contact etch stop layer;

one or more metal contacts coupled to the pixel circuitry through a first portion of the single contact etch stop layer, wherein
a second portion of the single contact etch stop layer is disposed in a photodiode region of the one or more photodiodes,

wherein the one or more isolation regions defined in the single contact etch stop layer isolate the first portion of the single
contact etch stop layer from the second portion of the single contact etch stop layer;

control circuitry coupled to the pixel array to control operation of the pixel array; and
readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.

US Pat. No. 9,154,750

CORRECTION OF IMAGE SENSOR FIXED-PATTERN NOISE (FPN) DUE TO COLOR FILTER PATTERN

OmniVision Technologies, ...

1. An apparatus comprising:
a pixel array;
a color filter array optically coupled to the pixel array, the color filter array including a plurality of tiled minimal repeating
units;

processing circuitry coupled to the pixel array to correct fixed pattern noise (FPN) in an image captured by the pixel array,
wherein the processing circuitry corrects values of pixels that are part of a correction group, and wherein the corrections
comprise a combination of:

a color ratio correction that is based on the ratios of selected colors within each minimal repeating unit of the plurality
of minimal repeating units, and

one or more crosstalk corrections that are based on a chief ray angle (CRA) correction and the color ratio correction.

US Pat. No. 9,368,530

IMAGE SENSOR AND COLOR FILTER ARRAY INCLUDING MULTIPLE SELECTABLE MESHED FILTER SETS

OmniVision Technologies, ...

1. An apparatus comprising:
a pixel array including a plurality of pixels; and
a filter array positioned over the pixel array, the filter array comprising a plurality of tiled minimal repeating units,
each minimal repeating unit including at least four meshed filter sets, wherein each meshed filter set includes a different
set of two or more filter wavelengths than any other meshed filter set in the minimal repeating unit such that no two meshed
filter sets in the minimal repeating unit share the same set of filter wavelengths, and wherein when placed in the filter
array each filter set includes interstitial spaces between its filters to accommodate filters from another filter set.

US Pat. No. 9,332,193

SYNCHRONIZATION OF IMAGE ACQUISITION IN MULTIPLE IMAGE SENSORS WITH A SYNCHRONIZATION CLOCK SIGNAL

OmniVision Technologies, ...

1. A multiple image sensor image acquisition system comprising:
a clock control circuit to generate a synchronization clock signal, the synchronization clock signal having a prolonged constant
cycle during which the synchronization clock signal is held at a constant level for a period of time corresponding to multiple
clock cycles;

a first image sensor coupled with the clock control unit to receive the synchronization clock signal, the first image sensor
having a first synchronization circuit that is operable to synchronize image acquisition for the first image sensor based
on detection of an end of the prolonged constant cycle; and

a second image sensor coupled with the clock control unit to receive the synchronization clock signal, the second image sensor
having a second synchronization circuit that is operable to synchronize image acquisition for the second image sensor based
on detection of the end of the prolonged constant cycle.

US Pat. No. 9,276,029

OPTICAL ISOLATION GRID OVER COLOR FILTER ARRAY

OmniVision Technologies, ...

1. A color image sensor, comprising:
a plurality of pixel cells arranged in a pixel array;
a plurality of color filters arranged in a color filter array disposed over the pixel array, wherein each one of the plurality
of color filters is aligned with a corresponding underlying pixel cell of the pixel array; and

an optical isolation grid disposed over the color filter array such that incident light is directed through the optical isolation
grid prior to be being directed through the color filter array to the pixel array, wherein the optical isolation grid includes
a plurality of sidewalls arranged to define a plurality of openings in the optical isolation grid, wherein each one of the
plurality of openings is aligned with a corresponding underlying one of the plurality of color filters such that each one
of the plurality of color filters is optically isolated by the optical isolation grid to receive incident light only through
a corresponding aligned one of the plurality of openings.

US Pat. No. 9,372,286

METHOD OF FORMING DUAL SIZE MICROLENSES FOR IMAGE SENSORS

OmniVision Technologies, ...

1. A method of forming microlenses for an image sensor having at least one large-area pixel and at least one small-area pixel,
the method comprising:
forming a uniform layer of microlens material on a light incident side of the image sensor over the at least one large-area
pixel and over the at least one small-area pixel;

forming the layer of microlens material into a first block disposed over the at least one large-area pixel and into a second
block disposed over the at least one small-area pixel;

forming at least one void in the second block to reduce a volume of microlens material included in the second block; and
reflowing the first block and the second block to form a respective first microlens and second microlens, wherein the first
microlens has substantially the same effective focal length as the second microlens.

US Pat. No. 9,386,203

COMPACT SPACER IN MULTI-LENS ARRAY MODULE

OmniVision Technologies, ...

1. An apparatus, comprising:
an image sensor partitioned into a plurality of image sensor regions, wherein a circuit board and the image sensor are un-integrated
components such that the image sensor is attached to the circuit board;

a lens array including a plurality of lenses disposed proximate to the image sensor, wherein each one of the plurality of
lenses is arranged to focus a single image onto a respective one of the plurality of image sensor regions; and

a spacer structure extending between the lens array and the circuit board to separate the lens array from the image sensor,
wherein the spacer structure is bonded directly to the circuit board and surrounds a perimeter around all of the plurality
of image sensor regions and the plurality of lenses such that none of the spacer structure is disposed between any of the
plurality of lenses and the plurality of image sensor regions of the image sensor.

US Pat. No. 9,274,322

THREE-PIECE ALL-ASPHERIC ADAPTER FISHEYE LENS

OmniVision Technologies, ...

1. A three-piece all-aspheric adapter fisheye (TPAAAF) lens, comprising:
a negative meniscus lens, a biconvex lens, and a biconcave lens positioned between the negative meniscus lens and the biconvex
lens;

the negative meniscus, biconcave, and biconvex lenses being coaxial and arranged with an exit pupil to cooperatively generate
an image with a camera lens that has greater field of view than the camera lens alone when the exit pupil is coplanar and
coaxial with an entrance pupil of the camera lens; and

the negative meniscus, biconcave, and biconvex lenses each having an aspheric object-side surface and an aspheric image-side
surface.

US Pat. No. 9,142,581

DIE SEAL RING FOR INTEGRATED CIRCUIT SYSTEM WITH STACKED DEVICE WAFERS

OmniVision Technologies, ...

1. An integrated circuit system comprising
a first die including:
a first device formed in an integrated circuit region of a first semiconductor layer, and
a first metal stack formed on the first semiconductor layer, the first metal stack including one or more metal layers formed
in a dielectric layer;

a second die including:
a second device formed in an integrated circuit region of a second semiconductor layer, and
a second metal stack formed on the second semiconductor layer, the second metal stack including one or more metal layers formed
in a dielectric layer;

wherein a front side of the first die is bonded to a front side of the second die by bonding the first metal stack to the
second metal stack along a bonding interface between the dielectric layer of the first metal stack and the dielectric layer
of the second metal stack; and

a two-part seal ring including:
a first seal ring formed in an edge region of the first die, wherein the first seal ring is formed in the first metal stack,
surrounds the integrated circuit region of the first die, and includes at least one via coupled to at least one metal layer
of the first metal stack, and

a second seal ring formed in an edge region of the second die, wherein the second seal ring surrounds the integrated circuit
region of the second die, and wherein the second seal ring includes:

a conductive path that extends from a backside of the second die through the second semiconductor layer, the second metal
stack, and the bonding interface to the first seal ring, wherein the conductive path is electrically coupled to at least one
metal layer of the second metal stack and is electrically coupled to at least one via of the first seal ring or at least one
metal layer of the first metal stack.

US Pat. No. 9,355,054

DIGITAL CALIBRATION-BASED SKEW CANCELLATION FOR LONG-REACH MIPI D-PHY SERIAL LINKS

OmniVision Technologies, ...

1. A Mobile Industry Processor Interface (MIPI) physical layer (D-PHY) serial communication link apparatus, comprising:
a clock transmitting circuit for transmitting a clock signal on a first lane of the MIPI D-PHY serial link;
a data transmitting circuit for transmitting a data signal on a second lane of the MIPI D-PHY serial link;
a clock receiving circuit for receiving the clock signal on the first lane of the MIPI D-PHY serial link; and
a data receiving circuit for receiving the data signal on the second lane of the MIPI D-PHY serial link; wherein:
the clock transmitting circuit and the data transmitting circuit are adapted to transmit the clock signal and the data signal
in phase during a calibration mode;

the clock transmitting circuit and the data transmitting circuit are adapted to transmit the clock signal and the data signal
out of phase during a normal operation mode;

the clock signal and the data signal are transmitted in a first direction on the first lane and the second lane, respectively,
in the normal operation mode;

the clock signal and the data signal are transmitted in a second direction on the first lane and the second lane, respectively,
in the calibration mode; and

the second direction is opposite of the first direction.

US Pat. No. 9,270,866

APPARATUS AND METHOD FOR AUTOMATED SELF-TRAINING OF WHITE BALANCE BY ELECTRONIC CAMERAS

OmniVision Technologies, ...

1. A method for calibrating auto white balancing in an electronic camera, comprising:
obtaining, using a processor onboard the electronic camera, a plurality of first color values from a respective first plurality
of images of a respective plurality of real-life scenes captured by the electronic camera under a first illuminant, the electronic
camera including a plurality of initial auto white balance parameters stored in memory onboard the electronic camera and having
only one precalibrated auto white balance parameter, the precalibrated auto white balance parameter being associated with
a reference illuminant different from the first illuminant;

invoking, using the processor, an assumption about a true color value of at least portions of the real-life scenes, the assumption
being stored in the memory; and

determining, using a self-training module onboard the electronic camera, a plurality of final auto white balance parameters
for a respective plurality of illuminants including the first illuminant and the reference illuminant, the self-training module
including the processor and machine-readable self-training instructions stored in the memory that, when executed by the processor,
perform the step of determining based upon the true color value, average of the first color values, and the initial auto white
balance parameters.

US Pat. No. 9,258,485

IMAGE SENSOR CROPPING IMAGES IN RESPONSE TO CROPPING COORDINATE FEEDBACK

OmniVision Technologies, ...

1. A method for reducing consumption of image sensor processor bandwidth, the method comprising:
capturing an image containing subject matter with an image sensor;
cropping the image to generate a cropped image, wherein cropping the image is performed by the image sensor in response to
coordinates received from an image sensor processor;

sending the cropped image from the image sensor to the image sensor processor;
determining, with the image sensor processor, new coordinates based on a position of the subject matter in the cropped image,
wherein said determining the new coordinates based on the position of the subject matter comprises determining the new coordinates
based on movement between the cropped image and a previously cropped image that was cropped by the image sensor processor
prior to cropping the cropped image; and

sending the new coordinates to the image sensor.

US Pat. No. 9,240,431

CONDUCTIVE TRENCH ISOLATION

OmniVision Technologies, ...

1. A method of image sensor fabrication, the method comprising:
forming a plurality of photodiodes in a semiconductor layer;
forming a plurality of pinning wells in the semiconductor layer;
forming a plurality of deep trench isolation regions in the semiconductor layer, wherein forming the plurality of deep trench
isolation regions includes:

(1) forming an oxide layer on an inner surface of the plurality of deep trench isolation regions; and
(2) depositing a conductive fill in the plurality of deep trench isolation regions, wherein the oxide layer is disposed between
the semiconductor layer and the conductive fill; and

forming a fixed charge layer disposed on the semiconductor layer wherein the plurality of deep trench isolation regions are
disposed between the plurality of pinning wells and the fixed charge layer.

US Pat. No. 9,167,272

METHOD, APPARATUS AND SYSTEM FOR EXCHANGING VIDEO DATA IN PARALLEL

OmniVision Technologies, ...

1. A method comprising:
receiving video data;
determining, based on the received video data, multiple data sets each for a different respective video frame, the multiple
data sets including a first data set and a second data set; and

for each of the multiple data sets, performing with a parallelization circuit a respective distribution of the data set across
multiple channels, wherein the distribution of the first data set during a first time period is according to a first mapping
of the multiple channels each to a different respective one and only one of multiple data types, wherein the multiple data
types each correspond to a different respective one of multiple dimensions of a first color space, wherein the distribution
of the second data set during a second time period after the first time period is according to a second mapping of the multiple
channels each to a different respective one and only one of the multiple data types, wherein the multiple dimensions of the
first color space include a luma dimension, a first chroma dimension and a second chroma dimension, or the multiple dimensions
of the first color space include a red dimension, a green dimension and a blue dimension, wherein a total number of the multiple
channels is equal to a total number of the multiple dimensions of the first color space, and
wherein the second mapping is different from the first mapping, wherein, for each of the multiple channels, the data type
allocated to that channel according to the first mapping is different than the data type allocated to that channel according
to the second mapping.

US Pat. No. 9,349,763

CURVED IMAGE SENSOR SYSTEMS AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A method for manufacturing one or more curved image sensor systems, comprising:
at elevated pressure relative to atmospheric pressure, bonding a light-transmitting substrate to an image sensor wafer having
at least one photosensitive pixel array, to form a composite wafer with a respective hermetically sealed cavity between the
light-transmitting substrate and each of the at least one photosensitive pixel array; and

thinning the image sensor wafer of the composite wafer to induce deformation of the image sensor wafer to form, from each
of the at least one pixel array, a respective concavely curved pixel array.

US Pat. No. 9,349,765

SUSPENDED LENS SYSTEM HAVING A NON-ZERO OPTICAL TRANSMISSION SUBSTRATE FACING THE CONCAVE SURFACE OF A SINGLE-PIECE LENS AND WAFER-LEVEL METHOD FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A suspended lens system for imaging a scene, comprising:
a first single-piece lens for receiving light from the scene, the first single-piece lens including a first concave surface;
and

a substrate including a first side, facing the first concave surface, for holding the first single-piece lens, the substrate
having non-zero optical transmission and contacting only portions of the first single-piece lens away from the first concave
surface.

US Pat. No. 9,319,603

SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING IMAGE DATA AND CONTROL SIGNALS

OmniVision Technologies, ...

1. An image sensor system, comprising:
an image sensor having a power input terminal, a data terminal, a clock input terminal, and a ground terminal;
a host controller coupled to:
the power input terminal solely to provide power to one or more components of the image sensor,
the data terminal to receive analog image data from the image sensor,
the clock input terminal to provide one or more clock signals to the image sensor, and
the ground terminal, wherein the ground terminal serves as a common reference between the image sensor and one or more circuits
of the host controller; and

logic configured to perform operations comprising:
transferring the analog image data from the image sensor to the host controller through the data terminal of the image sensor;
and

transferring one or more digital control signals between the image sensor and the host controller only through the data terminal
and the clock input terminal.

US Pat. No. 9,300,331

METHOD, APPARATUS AND SYSTEM FOR PROVIDING PRE-EMPHASIS IN A SIGNAL

OmniVision Technologies, ...

9. An imaging device comprising:
a pixel array;
readout circuitry to generate image data based on signals from the pixel array; and
a transmitter coupled to the readout circuitry to transmit the image data, the transmitter comprising:
pre-driver circuitry including:
an input to receive a data signal;
a first output; and
a second output;
a driver stage coupled to the first output via a first node and coupled to the second output via a second node, the driver
stage to receive via the first node a first signal of a first differential signal pair, to receive via the second node a second
signal of the first differential signal pair, and to generate a second differential signal pair based on the first differential
signal pair;

a first load circuit coupled between the input of the pre-driver circuitry and the first node, the first load circuit including
a first leg comprising a first load, a first inverter and a first switch to operate in a first switch state for a first configuration
of the first load circuit; and

a second load circuit coupled between the input of the pre-driver circuitry and the second node, the second load circuit including
a second leg comprising a second load and a second switch to operate in a second switch state for a second configuration of
the second load circuit,

wherein the first differential signal pair is generated based on the data signal, the first configuration and the second configuration.

US Pat. No. 9,224,881

LAYERS FOR INCREASING PERFORMANCE IN IMAGE SENSORS

OmniVision Technologies, ...

5. An image sensor comprising:
a semiconductor substrate including a photosensitive element for accumulating charge in response to incident image light,
wherein the semiconductor substrate includes a light-receiving surface positioned to receive the image light;

a negative charge layer disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in
an accumulation zone in the semiconductor substrate along the light-receiving surface; and

a charge sinking layer disposed proximate to the negative charge layer for supplying electrons from the charge sinking layer
to the negative charge layer to conserve or increase an amount of negative charge in the negative charge layer, and wherein
the negative charge layer is disposed between the semiconductor substrate and the charge sinking layer, wherein the negative
charge layer includes hafnium-aluminum-oxide, wherein the negative charge layer includes a graded distribution of aluminum
in the hafnium-aluminum-oxide, the hafnium-aluminum-oxide including a greater distribution of aluminum proximate to a top
side of the negative charge layer than proximate to a bottom side of the negative charge layer, the bottom side in closer
proximity to the photosensitive element than the top side.

US Pat. No. 9,160,949

ENHANCED PHOTON DETECTION DEVICE WITH BIASED DEEP TRENCH ISOLATION

OmniVision Technologies, ...

1. A photon detection device, comprising:
a photodiode having a planar junction disposed in a first region of semiconductor material, wherein the semiconductor material
includes P doped silicon and the planar junction includes an N doped silicon region disposed proximate to a P doped silicon
region in the semiconductor material, wherein a doping density in the N doped silicon region gradually decreases towards an
edge of the N doped silicon region, wherein the edge of the N doped silicon region does not utilize a guard ring or a doped
well for isolation; and

a deep trench isolation (DTI) structure disposed in the semiconductor material, wherein the DTI structure isolates the first
region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on
an other side of the DTI structure, wherein the DTI structure includes:

a dielectric layer lining an inside surface of the DTI structure; and
doped semiconductor material disposed over the dielectric layer inside the DTI structure, wherein the doped semiconductor
material disposed inside the DTI structure is coupled to a bias voltage to isolate the photodiode in the first region of the
semiconductor material from the second region of the semiconductor material.

US Pat. No. 9,431,456

IMAGE SENSOR WITH DOPED TRANSFER GATE

OmniVision Technologies, ...

1. A method for fabricating an image sensor, wherein the image sensor comprises a plurality of pixels each pixel including
a photodetector, wherein the pixels are arranged such that two adjacent pixels share a common charge-to-voltage conversion
region, the method comprising:
forming a plurality of transfer gates over a surface of the substrate layer, wherein a transfer gate is disposed between a
respective shared charge-to-voltage conversion region and each photodetector associated with the shared charge-to-voltage
conversion region and the transfer gates associated with each shared charge-to-voltage conversion region are spaced apart
a predetermined distance to form a conversion region gap;

depositing a masking conformal dielectric layer over the image sensor, wherein the masking conformal dielectric layer is continuous
and covers the plurality of transfer gates and each photodetector associated with the shared charge-to-voltage conversion
region and fills each conversion region gap;

etching the masking conformal dielectric layer to form sidewall spacers along an outside edge of each transfer gate, wherein
a portion of the masking conformal dielectric layer remains in each conversion region gap and is disposed over the entire
surface of the substrate layer in each conversion region gap; and

implanting an implant region in the plurality of transfer gates and the masking conformal dielectric layer in each conversion
region gap masks the implant so that each charge-to-voltage conversion region is substantially devoid of the implant region.

US Pat. No. 9,406,716

INFRARED REFLECTION/ABSORPTION LAYER FOR REDUCING GHOST IMAGE OF INFRARED REFLECTION NOISE AND IMAGE SENSOR USING THE SAME

OmniVision Technologies, ...

1. An image sensor, comprising:
a photosensing layer for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal
indicative of the IR radiation;

a redistribution layer (RDL) under the photosensing layer, the RDL comprising a pattern of conductors configured for receiving
the electrical signal;

a plurality of conductive pads under the RDL layer, each conductive pad being electrically connected to a conductor of the
pattern of conductors; and

an IR reflection layer between the photosensing layer and the RDL, said IR reflection layer reflecting a reflected portion
of the IR radiation back to the photosensing layer such that the reflected portion of the IR radiation does not impinge upon
the RDL.

US Pat. No. 9,312,401

SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR STACKED CHIP APPLICATIONS

OmniVision Technologies, ...

1. An imaging sensor system, comprising:
a first semiconductor layer of a first wafer;
a single photon avalanche diode (SPAD) imaging array including a plurality of pixels formed in the first semiconductor layer,
wherein the plurality of pixels include an N number of pixels, wherein substantially an entire thickness of the first semiconductor
layer of each pixel is fully depleted such that a multiplication region included in each pixel near a front side of the first
semiconductor layer is configured to be illuminated with photons through a back side of the first semiconductor layer and
through the substantially entire thickness of the fully depleted first semiconductor layer;

deep n type isolation regions disposed in the first semiconductor layer between the pixels to isolate each one of the plurality
of pixels from one another;

a second semiconductor layer of a second wafer bonded to the first wafer;
a plurality of digital counters formed in the second semiconductor layer and electrically coupled to the SPAD imaging array,
wherein the plurality of digital counters includes at least N number of digital counters, wherein each of the N number of
digital counters are coupled to count output pulses generated by a respective one of the plurality of pixels.

US Pat. No. 9,502,461

METHODS OF FABRICATING CAMERA MODULE AND SPACER OF A LENS STRUCTURE IN THE CAMERA MODULE

VISERA TECHNOLOGIES COMPA...

1. A method for fabricating a camera module, comprising:
providing a first carrier;
forming a first base pattern on the first carrier;
attaching a first dry film photoresist on the first carrier and the first base pattern;
performing a lamination process to planarize the first dry film photoresist;
patterning the first dry film photoresist to form a first spacer;
providing a first transparent substrate having a plurality of first lenses formed on a first surface of the first transparent
substrate;

stripping the first spacer from the first carrier;
attaching the first spacer on the first surface of the first transparent substrate to surround each of the first lenses to
form a first lens structure; and

bonding a plurality of image sensor device chips.

US Pat. No. 9,324,759

IMAGE SENSOR PIXEL FOR HIGH DYNAMIC RANGE IMAGE SENSOR

OmniVision Technologies, ...

1. An image sensor pixel for use in a high dynamic range image sensor, the image sensor pixel comprising:
a first photodiode disposed in a semiconductor material, the first photodiode including a first doped region, a first lightly
doped region, and a first highly doped region disposed between the first doped region and the first lightly doped region,
wherein the first doped region is doped opposite of the first lightly doped region and the first highly doped region, and
wherein the first highly doped region has a higher first dopant concentration than the first lightly doped region, and wherein
the first doped region is positioned to receive incident light before the first highly doped region receives the incident
light; and

a second photodiode disposed in the semiconductor material and having a second full well capacity substantially equal to a
first full well capacity of the first photodiode, the second photodiode including a second doped region, a second lightly
doped region having a narrower light exposure area than the first lightly doped region, and a second highly doped region disposed
between the second doped region and the second lightly doped region, the second lightly doped region having a smaller cross-sectional
area than the second highly doped region, wherein the second doped region is doped the same polarity as the first doped region
but opposite of the second lightly doped region and the second highly doped region, and wherein the second highly doped region
has a higher second dopant concentration than the second lightly doped region, the first highly doped region and the second
highly doped region being substantially the same size and shape and having substantially equal dopant concentrations, and
wherein the second doped region is positioned to receive the incident light before the second highly doped region receives
the incident light.

US Pat. No. 9,360,607

COLOR FILTER ARRAY WITH SUPPORT STRUCTURES TO PROVIDE IMPROVED FILTER THICKNESS UNIFORMITY

OmniVision Technologies, ...

1. A color filter array for use on a color image sensor, comprising:
an oxide grid having a plurality of oxide sidewalls arranged to define a plurality of openings in the oxide grid, wherein
each one of the plurality of openings is adapted to be disposed over a corresponding pixel cell of the color image sensor;

a plurality of oxide support structures, wherein each one of the plurality of oxide support structures is adapted to be disposed
in an interior region of a corresponding one of the plurality of openings in the oxide grid over the corresponding pixel cell
of the color image sensor; and

a plurality of color filters, wherein each one of the plurality of color filters is comprised of color filter material, wherein
the each one of the plurality of openings in the oxide grid is filled with the color filter material of a corresponding one
of the plurality of color filters, wherein a surface tension between each one of the plurality of oxide support structures
and surrounding color filter material is adapted to provide uniform thickness for each one of the plurality of color filters
within the corresponding one of the plurality of openings in the oxide grid.

US Pat. No. 9,229,280

LCOS PANEL AND METHOD OF MANUFACTURING THE SAME

OMNIVISION TECHNOLOGIES (...

1. A method of manufacturing liquid crystal on silicon (LCOS) panel, comprising the following steps in the sequence set forth:
providing a silicon substrate and a transparent substrate, the silicon substrate having at least one conductive pad formed
thereon, the transparent substrate having a transparent electrode layer formed thereon;

dispensing or coating a sealing material on a predetermined area of the silicon substrate or the transparent substrate;
bonding the silicon substrate with the transparent substrate;
singulating the bonded silicon substrate and transparent substrate such that at least one space is provided between the silicon
substrate and the transparent substrate on an outer side of the sealing material, a part of the transparent electrode layer
being exposed in the space; and dispensing a conductive adhesive into the space to connect the transparent electrode layer
to the conductive pad.

US Pat. No. 9,184,206

BACKSIDE ILLUMINATED COLOR IMAGE SENSORS AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A method for manufacturing a backside illuminated color image sensor, comprising:
modifying frontside of an image sensor wafer, including pixel arrays, to produce electrical connections to the pixel arrays,
the electrical connections extending depth-wise into the image sensor wafer from the frontside;

exposing the electrical connections from backside of the image sensor wafer;
after the step of exposing, flattening the backside of the image sensor wafer to provide a flat backside surface; and
after the step of flattening, applying a color filter to the flat backside surface.

US Pat. No. 9,291,755

COLOR FILTER INCLUDING CLEAR PIXEL AND HARD MASK

OmniVision Technologies, ...

1. An apparatus comprising:
a color filter arrangement formed on a substrate having a pixel array formed therein, the color filter arrangement including:
a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon;
a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon;
a second color filter having the first clear hard mask layer formed thereon, and
a third color filter having no clear hard mask layer formed thereon.

US Pat. No. 9,105,767

NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT

OmniVision Technologies, ...

1. An image sensor pixel, comprising: a photodiode region having a first polarity doping type disposed in a semiconductor
layer; a pinning surface layer having a second polarity doping type disposed over the photodiode region in the semiconductor
layer, wherein the second polarity is opposite from the first polarity; a first polarity charge layer disposed proximate to
the pinning surface layer over the photodiode region; a contact etch stop layer disposed over the photodiode region proximate
to the first polarity charge layer, wherein the first polarity charge layer is disposed between the pinning surface layer
and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is
induced in the contact etch stop layer; and a passivation layer disposed over the photodiode region between the pinning surface
layer and the contact etch stop layer, wherein the passivation layer comprises a plurality of passivation layers disposed
over the photodiode region, wherein a first one of the plurality of passivation layers is disposed between the pinning surface
layer and the first polarity charge layer, and wherein a second one of the plurality of passivation layers is disposed between
the first polarity charge layer and the contact etch stop layer.

US Pat. No. 9,313,392

SHUTTER RELEASE USING SECONDARY CAMERA

OmniVision Technologies, ...

7. An imaging system comprising:
a first image sensor;
a second image sensor; and
control circuitry coupled to transmit a shutter signal to the first image sensor and coupled to receive image data from the
second image sensor, wherein the control circuitry includes a non-transitory machine-accessible storage medium that provides
instructions that, when executed by the imaging system, will cause the imaging system to perform operations comprising:

activating the first image sensor;
capturing a sequence of images with the second image sensor, wherein each image in the sequence of images is captured with
only a portion of pixels in sectors of the second image sensor;

determining if the sequence of images captured with the second image sensor includes an image capture pattern from a user;
determining a category of the image capture pattern, wherein the shutter signal controls an exposure time of the first image
sensor based on the category of the image capture pattern;

sending the shutter signal from the control circuitry to the first image sensor when the image capture pattern is included
in the sequence of images captured with the second image sensor; and

capturing a target image at the exposure time with the first image sensor in response to receiving the shutter signal from
the control circuitry.

US Pat. No. 9,215,430

IMAGE SENSOR WITH PIXELS HAVING INCREASED OPTICAL CROSSTALK

OmniVision Technologies, ...

1. An image sensor, comprising:
a first pixel having a first light sensitive element, a first light filter, and a first microlens; and
a second pixel, disposed adjacent to the first pixel, having a second light sensitive element, a second light filter, and
a second microlens, wherein the first pixel is configured to direct at least some of the light received at the first microlens
to the second light sensitive element of the second pixel to increase optical crosstalk;

wherein the first microlens is convex and has a first focal point that is substantially above a light incident side of the
first light sensitive element such that at least some of the light received at the first microlens is directed to the second
light sensitive element and wherein a first effective focal depth of the first focal point is less than or equal to one half
of a height of the first pixel.

US Pat. No. 9,182,622

THERMAL CARRIER FOR AN LCOS DISPLAY PANEL AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. A thermal carrier for carrying and heating an LCOS display panel, comprising:
a carrier for mounting the LCOS display panel; and
a heating element positioned within the carrier beneath the LCOS display panel to thermally couple with the LCOS display panel,
wherein activation of the heating element transfers heat to the LCOS display panel from the carrier.

US Pat. No. 9,380,234

REDUCED RANDOM TELEGRAPH SIGNAL NOISE CMOS IMAGE SENSOR AND ASSOCIATED METHOD

OmniVision Technologies, ...

1. A reduced random telegraph signal (RTS)-noise CMOS image sensor comprising:
a pixel;
a correlated double sampling (CDS) circuit electrically connected to the pixel, and characterized by a CDS period that includes
a reference sample period and an image data sample period;

a bitline that transmits a transfer gate signal as a bitline signal having a non-zero value during a first time period entirely
between the reference sample period and the image data sample period;

a bitline connection switch between the pixel and a readout circuit connected to the pixel; and
a bitline switch controller electrically connected to and configured to control the bitline connection switch such that the
bitline connection switch is closed during the entire CDS period except for a single continuous open period that includes
the first time period.

US Pat. No. 9,123,604

IMAGE SENSOR WITH DOPED SEMICONDUCTOR REGION FOR REDUCING IMAGE NOISE

OmniVision Technologies, ...

1. A backside illuminated image sensor comprising:
a semiconductor layer having a back-side surface and a front-side surface, wherein the semiconductor layer includes silicon,
and wherein the semiconductor layer comprises:

a pixel array region including a plurality of photodiodes configured to receive image light through the back-side surface
of the semiconductor layer; and

a peripheral circuit region including peripheral circuit elements for operating the plurality of photodiodes, wherein the
peripheral circuit elements emit photons in a non-visible wavelength, and wherein the peripheral circuit region borders the
pixel array region, the peripheral circuit region further including a doped semiconductor region doped to a level to absorb
the photons emitted by the peripheral circuit elements to prevent the plurality of photodiodes from receiving the photons,
wherein the doped semiconductor region is disposed along the back-side surface of the semiconductor layer above the peripheral
circuit elements with no part of the doped semiconductor region above the pixel array region.

US Pat. No. 9,377,603

LOW-PROFILE HYBRID LENS SYSTEMS AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A low-profile hybrid lens system for imaging a scene onto an image plane, comprising:
a wafer-level lens including
a planar substrate having opposing first and second surfaces,
a first lens element of a first material and disposed on the first surface, and
a second lens element of a second material and disposed on the second surface;
a first cast lens; and
a second cast lens;wherein the wafer-level lens, the first cast lens, and the second cast lens are optically coupled in series.

US Pat. No. 9,124,801

IMAGE PROCESSING SYSTEM AND METHOD USING MULTIPLE IMAGERS FOR PROVIDING EXTENDED VIEW

OmniVision Technologies, ...

1. An imaging system for generating an image, comprising:
a plurality of imaging units coupled together; and
a system controller coupled to the plurality of imaging units for providing at least one signal to each of the plurality of
imaging units; wherein

each of the imaging units comprises:
an image sensing unit for generating an in-situ image, each in-situ image being a portion of the image,
a sampling unit that generates a sampled image by performing, on the in-situ image, at least one sampling operation selected
from the group consisting of:

(a) reducing distortion of the in-situ image by sampling a first portion of the in-situ image at a first sampling frequency
and sampling a second portion of the in-situ image at a second sampling frequency, the first and second sampling frequencies
being different,

(b) cropping the in-situ image,
(c) rotating the in-situ image,
(d) reducing slanting artifact,
(e) sampling only preselected rows of the in-situ image and discarding nonselected rows of the in-situ image, and
(f) sampling only preselected columns of the in-situ image and discarding nonselected columns of the in-situ image,
a composition unit for receiving a first composite image and producing a second composite image, the second composite image
being a combination of the first composite image and the sampled image, and

an output at which the second composite image is provided.

US Pat. No. 9,310,436

SYSTEM AND METHOD FOR SCAN-TESTING OF IDLE FUNCTIONAL UNITS IN OPERATING SYSTEMS

OmniVision Technologies, ...

1. A system comprising on one integrated circuit:
a seed memory coupled to provide a seed to a vector generator,
the vector generator configured to generate a serial test vector according to the seed;
at least one scan chain configured to apply data to, and observe data output of, logic of a first functional unit;
a signature generator configured to generate a signature from observed data from the scan chain;
a signature comparator configured to compare the signature to an expected signature in a signature memory;
a state memorizer;
a test register having at least a unit-idle flag settable by a processor of a system remainder and a unit-under-test flag
settable by a test control unit, the test register accessible by the processor of the system remainder, and

the test control unit being configured to operate a test sequence upon the first functional unit based on the unit-idle flag
being set in the test register, the test sequence including setting the unit-under-test flag, using the state memorizer to
save a state of the first functional unit, use the vector generator and signature generator with the scan chain to test the
logic of the first functional unit, and then using the state memorizer to restore the state of the first functional unit,
and then clearing the unit-under-test flag.

US Pat. No. 9,319,585

HIGH RESOLUTION ARRAY CAMERA

OmniVision Technologies, ...

1. A method of generating a high resolution color image, comprising:
focusing a first image onto a monochrome image sensor having a P resolution;
focusing a second image onto a color image sensor having a Q resolution, wherein Q image as the second image;

generating P resolution pixel data representative of the first image from the monochrome image sensor;
generating Q resolution pixel data representative of the second image from the color image sensor; and
combining the P resolution pixel data representative of the first image from the monochrome image sensor and the Q resolution
pixel data representative of the second image from the color image sensor to generate an R resolution color image, wherein
P

US Pat. No. 9,177,982

LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS

OmniVision Technologies, ...

1. A method of fabricating a backside illuminated image sensor, the method comprising:
providing a semiconductor layer of the backside illuminated image sensor having a frontside surface and a backside surface,
the semiconductor layer including a light sensing element and a periphery circuit region of the semiconductor layer containing
a light emitting element and not containing the light sensing element, wherein the periphery circuit region is external to
a sensor array region of the semiconductor layer;

forming a trench that penetrates the backside surface of the semiconductor layer, the trench positioned to prevent light emitted
by the light emitting element from reaching the light sensing element; and

forming an anti-reflection coating along sidewalls of the trench and along a bottom of the trench, but not completely filling
the trench with the anti-reflection coating.

US Pat. No. 9,165,959

IMAGE SENSOR WITH PIXEL UNITS HAVING MIRRORED TRANSISTOR LAYOUT

OmniVision Technologies, ...

1. An image sensor comprising:
a first pixel unit having a first plurality of photodiodes and a first shared floating diffusion region;
a second pixel unit, horizontally adjacent to the first pixel unit, having a second plurality of photodiodes and a second
shared floating diffusion region;

a first pixel transistor region of the first pixel unit having a plurality of pixel transistors for reading out image data
from the first shared floating diffusion region; and

a second pixel transistor region of the second pixel unit, horizontally adjacent to the first pixel transistor region, having
a plurality of pixel transistors for reading out image data from the second shared floating diffusion region;

wherein:
a transistor layout of the second pixel transistor region is a mirror image of a transistor layout of the first pixel transistor
region,

the pixel transistor regions each include a reset transistor, a row select transistor, and a source-follower transistor, and
the reset transistor of the first pixel transistor region is disposed adjacent to the reset transistor of the second pixel
transistor region and the reset transistors are both coupled to the same shared reset voltage supply connection.

US Pat. No. 9,420,176

360 DEGREE MULTI-CAMERA SYSTEM

OmniVision Technologies, ...

1. A camera system comprising:
a support structure;
a first image capture device including an array of photosensors, said array of photosensors including a greater number of
photosensors along a long edge of said array of photosensors than along a short edge of said array of photosensors, said first
image capture device being coupled to said support structure so that said short edge of said array of photosensors is substantially
horizontal;

a second image capture device including a second array of photosensors, said second array of photosensors including a greater
number of photosensors along a long edge of said second array of photosensors than along a short edge of said second array
of photosensors, said second image capture device being coupled to said support structure so that said short edge of said
second array of photosensors is substantially horizontal;

a lens system coupled to focus a first image on said array of photosensors of said first image capture device and to focus
a second image on said second array of photosensors of said second image capture device; and

an image processing system electronically coupled to receive image data representative of said first image from said first
image capture device, said first image having a long edge corresponding to said long edge of said array of photosensors and
a short edge corresponding to said short edge of said array of photosensors, and to receive image data representative of said
second image from said second image capture device, said second image having a long edge corresponding to said long edge of
said second array of photosensors and a short edge corresponding to said short edge of said second array of photosensors,
said image processing system being operative to generate image data representing a single image by combining said image data
received from said first image capture device and said image data received from said second image capture device along the
long edges of said first image and said second image.

US Pat. No. 9,366,942

IR-CUT FILTER HAVING RED ABSORBING LAYER FOR DIGITAL CAMERA

OmniVision Technologies, ...

1. A camera apparatus, comprising:
an image sensor to capture image light and generate an image in response to the image light;
an imaging lens optically aligned with the image sensor to focus the image light onto the image sensor; and
an infrared cut filter disposed between the imaging lens and the image sensor to remove infrared light components from the
image light prior to the image light reaching the image sensor, the infrared cut filter including:

at least one red absorbing layer that partially absorbs red light components within the image light; and
an infrared reflector that reflects the infrared light components, the infrared reflector disposed between the red absorbing
layer and the imaging lens,

wherein the at least one red absorbing layer is a cyan filter that absorbs more red light than green, blue, and infrared light,
wherein the at least one red absorbing layer is disposed between the infrared reflector and the image sensor to reduce red
ghost images in the image light incident upon the image sensor.

US Pat. No. 9,264,696

APPARATUS AND METHOD FOR THREE-DIMENSIONAL IMAGE CAPTURE WITH EXTENDED DEPTH OF FIELD

OmniVision Technologies, ...

1. An optical system for capturing images of a three-dimensional object, the optical system comprising a projector for structured
illumination of the object, wherein the projector comprises:
a light source,
a physical medium embossed to have a surface relief pattern according to a computer generated hologram (CGH), the physical
medium positioned between the light source and the object for structured illumination of the object, wherein the CGH comprises
a first computer representation of a grid mask and a second computer representation of a first Wavefront Coding (WFC) element,
and

a beam splitter between the physical medium and the object for changing a light direction from the light source, wherein the
physical medium is constructed and arranged such that a point spread function of the projector is less sensitive to a depth
of field of the physical medium than a point spread function of the projector without the physical medium.

US Pat. No. 9,083,977

SYSTEM AND METHOD FOR RANDOMLY ACCESSING COMPRESSED DATA FROM MEMORY

OmniVision Technologies, ...

1. A method facilitating random access to segments of compressed data stored in memory, said method comprising:
receiving a series of data segments;
encoding said series of data segments into a series of compressed data segments, each of said compressed data segments having
a variable segment size;

storing said series of compressed data segments in a compressed data memory;
determining the size of each of said compressed data segments; and
generating a locator for each of said compressed data segments; and wherein
said locator identifies a memory location of said compressed data memory storing at least part of an associated compressed
data segment;

said locator includes a memory address and an offset, said memory address identifying said memory location from a plurality
of memory locations of said compressed data memory, and said offset being indicative of the position of a first bit of said
associated compressed data segment within said memory location; and

said step of generating said locator of said associated compressed data segment includes
calculating a sum of the sizes of each of said compressed data segments in said series stored prior to said associated compressed
data segment,

dividing said sum by a value equal to the width of each of said plurality of memory locations of said compressed data memory
to obtain a quotient and a remainder,

converting said quotient to said memory address, and
setting said offset equal to said remainder.

US Pat. No. 9,380,208

IMAGE SENSOR POWER SUPPLY REJECTION RATIO NOISE REDUCTION THROUGH RAMP GENERATOR

OmniVision Technologies, ...

1. A ramp generator for use in readout circuitry of an image sensor, comprising:
a supply voltage sampling circuit coupled to a pixel cell of the image sensor to sample a black signal supply voltage of the
pixel cell during a black signal readout of the pixel cell, and to sample an image signal supply voltage of the pixel cell
during an image signal readout of the pixel cell;

a first integrator circuit having a first input coupled to receive a buffered reference voltage, and a second input coupled
to an output of the supply voltage sampling circuit;

a first switch coupled between the first input of the first integrator circuit and a first capacitor;
a second switch coupled between an output of the first integrator circuit and the first capacitor, wherein the first and second
switches are switched to transfer a signal representative of a difference between the image signal supply voltage and the
black signal supply voltage to the first capacitor; and

a second integrator circuit coupled to the first capacitor, wherein the second integrator circuit is coupled to generate an
output ramp signal coupled to be received by an analog to digital converter, wherein a starting value of the output ramp signal
is adjusted in response to the difference between the image signal supply voltage and the black signal supply voltage.

US Pat. No. 9,151,878

APPARATUS AND METHOD FOR MOLDING OPTICAL LENSE DURING A PUDDLE DISPENSING PROCESS

OmniVision Technologies, ...

1. An optical lens mold for use during a wafer level puddle dispensing process, comprising: a spacer cavity portion with a
first top; a lens cavity portion with a second top; and, a flow stop control portion, with a third top, defining a channel
located between the spacer cavity portion and the lens cavity portion; wherein the spacer cavity portion, the lens cavity
portion and the flow stop control portion are aligned along a first horizontal plane such that optical lens material flow
between the lens cavity portion and spacer cavity portion through the flow stop control portion.

US Pat. No. 9,413,992

HIGH DYNAMIC RANGE IMAGE SENSOR WITH FULL RESOLUTION RECOVERY

OmniVision Technologies, ...

1. A method of reading pixel data from a pixel array including a plurality of pixels, wherein the plurality of pixels is organized
into a plurality of regions of pixels arranged in a pattern in the pixel array, the method comprising:
exposing each one of a plurality of regions of pixels for a respective one of a plurality of exposure times;
reading pixel data from the plurality of regions of pixels;
for each respective one of the plurality of exposure times, determining an exposure ratio for each one of the plurality of
regions of pixels, wherein the exposure ratio for each one of the plurality of regions of pixels for each respective one of
the plurality of exposure times is equal to respective one of the plurality of exposure times divided by the exposure time
for said one of the plurality regions of pixels;

for each respective one of the plurality of exposure times, substituting the pixel data for each one of the plurality of regions
of pixels for which the exposure ratio is less than a first threshold with the pixel data from said one of the plurality of
regions of pixels multiplied by the exposure ratio for said one of the plurality of regions of pixels to generate an image
in a plurality of images for each respective one of the plurality of exposure times;

for each respective one of the plurality of exposure times, substituting the pixel data for each one of the plurality of regions
of pixels for which the exposure ratio is greater than a second threshold with an interpolation of the pixel data from the
one of the plurality of regions of pixels having said respective one of the plurality of exposure times to generate the image
in the plurality of images for each respective one of the plurality of exposure times; and

combining the plurality of images to produce a high dynamic range image.

US Pat. No. 9,239,147

APPARATUS AND METHOD FOR OBTAINING UNIFORM LIGHT SOURCE

Omnivision Technologies, ...

1. An apparatus for adjusting intensity of light from a light source at a plurality of targets of the light, the apparatus
comprising:
a plurality of moveable aperture elements, locatable between the light source and the targets, each aperture element defining
an aperture through which the light passes from the light source to an associated one of the plurality of targets along a
longitudinal axis of the aperture element; and

a holder movably holding the plurality of moveable aperture elements,
wherein each of the plurality of moveable aperture elements is individually and singularly moveable within the holder along
the longitudinal axis of the aperture element to individually adjust an amount of light flux incident on the target associated
with the aperture element,

wherein the plurality of moveable aperture elements are held within the holder by mating threads, and the plurality of moveable
aperture elements are moveable along their longitudinal axes by rotating the aperture elements about their longitudinal axes.

US Pat. No. 9,177,983

IMAGE SENSOR WITH OPTICAL FILTERS HAVING ALTERNATING POLARIZATION FOR 3D IMAGING

OmniVision Technologies, ...

1. An image sensor comprising:
a beamsplitter to encode incident light with a set of two orthogonal polarizations including a first polarization and a second
polarization, wherein the incident light includes light polarized to the first polarization corresponding to a first view
of a three-dimensional object and light polarized to the second polarization corresponding to a second view of the three-dimensional
object;

a pixel array comprising a plurality of pixel units arranged in rows and columns, each pixel unit including at least one imaging
pixel;

a polarizer array optically coupled to the pixel array to filter the incident light, the polarizer array comprising a plurality
of polarizing filters wherein each pixel unit in the pixel array is optically coupled to a corresponding polarizing filter
in the polarizer array, and wherein the polarizations of all polarizing filters in the polarizer array are selected from the
set of two orthogonal polarizations consisting of the first polarization and the second polarization;

wherein each imaging pixel comprises:
a photosensing region disposed in a semiconductor layer of the image sensor;
a color filter disposed on the light-incident side of the image sensor; and
a microlens disposed on the light incident side to focus incident light to the photosensing region.

US Pat. No. 9,391,632

METHOD AND SYSTEM FOR IMPLEMENTING AN EXTENDED RANGE APPROXIMATION ANALOG-TO-DIGITAL CONVERTER

OmniVision Technologies, ...

1. A method of implementing an extended range successive approximation analog-to-digital converter (ADC), comprising:
acquiring by a readout circuitry an image data from a row in a color pixel array;
generating by an ADC circuitry included in the readout circuitry an ADC pedestal for the row;
storing by a Successive Approximation Register (SAR) included in the ADC circuitry the ADC pedestal, wherein the SAR includes
a plurality of bits and an additional bit that is a duplicate of one of the plurality of bits;

sampling by the ADC circuitry the image data from the row against the ADC pedestal stored in the SAR to obtain a sampled input
data; and

converting by the ADC circuitry the sampled input data from analog to digital to obtain an ADC output value.

US Pat. No. 9,288,379

SYSTEM AND METHOD FOR CONTINUOUS AUTO FOCUS WITHIN CAMERA MODULE

OmniVision Technologies, ...

1. A continuous autofocus system for generating an image, comprising:
an image generation portion having a lens,
an autofocus voice coil motor, and
an image sensor for generating contrast image data of an image; and,
a driver integrated circuit (IC) for controlling the autofocus voice coil motor, thereby translating the lens with respect
to the image sensor;

wherein the driver IC directly receives the contrast image data such that the driver IC continuously maintains the focus of
the image,

wherein the contrast image data is generated by the image sensor as a digital signal;
the driver IC having a digital-to-analog converter for converting the digital contrast image data to analog contrast image
data represented as a voltage potential.

US Pat. No. 9,202,591

ON-LINE MEMORY TESTING SYSTEMS AND METHODS

OmniVision Technologies, ...

1. A method for testing an electronic memory while the electronic memory is in use, comprising:
initializing a write error detection code in response to a write access to the electronic memory at a location at a beginning
address of an address range under test;

initializing a read error detection code in response to a read access to the electronic memory at the location at the beginning
address of the address range under test;

updating the write error detection code in response to each write access to the electronic memory at a location within the
address range under test, such that a final value of the write error detection code is a cyclic redundancy check (CRC) value
of data written to the electronic memory at each location within the address range under test;

updating the read error detection code in response to each read access to the electronic memory at a location within the address
range under test, such that a final value of the read error detection code is a CRC value of data read from the electronic
memory at each location within the address range under test;

comparing the final value of the write error detection code to the final value of the read error detection code to determine
if the electronic memory has a fault; and

generating an error signal if the electronic memory has a fault.

US Pat. No. 9,366,848

WAFER-LEVEL LENS SYSTEMS AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A wafer-level lens system for imaging a scene onto an image plane, comprising:
three wafer-level lenses optically coupled in series with each other, each of the wafer-level lenses including:
a substrate, having opposing first and second surfaces,
a first lens element of a first material and disposed on the first surface, and
a second lens element of a second material and disposed on the second surface;wherein, for at least one of the wafer-level lenses, the first material is different from the second material, and wherein
the wafer-level lens system has F-number less than 2.5.

US Pat. No. 9,331,116

BACK SIDE ILLUMINATED SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR WITH HIGH SHORT WAVELENGTH DETECTION EFFICIENCY

OmniVision Technologies, ...

1. A single photon avalanche diode (SPAD), comprising:
an n doped epitaxial layer disposed in a first semiconductor layer;
a p doped epitaxial layer formed over the n doped epitaxial layer on a back side of the first semiconductor layer, wherein
the p doped epitaxial layer covers the entire back side of the first semiconductor layer;

a multiplication junction defined at an interface between the n doped epitaxial layer and the p doped epitaxial layer, wherein
a multiplication junction is reversed biased above a breakdown voltage such that a photon received through the back side of
the first semiconductor layer triggers an avalanche multiplication process in the multiplication junction; and

a p? doped guard ring region implanted in the n doped epitaxial layer surrounding the multiplication junction, wherein the
p doped epitaxial layer covers the entire p? doped guard ring from the back side of the first semiconductor layer.

US Pat. No. 9,516,249

PIXEL CONTROL SIGNAL DRIVER

OmniVision Technologies, ...

1. A pixel control circuit, comprising:
a first supply rail coupled to provide a first supply voltage;
a second supply rail coupled to provide a second supply voltage;
a variable resistance circuit coupled to the second power supply rail; and
a plurality of driver circuits coupled between the first supply rail and the variable resistance circuit, wherein each one
of the plurality of driver circuits is coupled to provide a control signal coupled to control a pixel circuit, wherein the
variable resistance circuit is coupled to provide a first resistance between the plurality of driver circuits and the second
supply rail during a sampling operation of the pixel circuit, wherein the variable resistance circuit is coupled to provide
a second resistance between the plurality of driver circuits and the second supply rail during a non-sampling operation of
the pixel circuit.

US Pat. No. 9,450,004

WAFER-LEVEL ENCAPSULATED SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING SAME

OmniVision Technologies, ...

1. An encapsulated semiconductor device comprising:
a device die with a semiconductor device fabricated thereon;
a carrier layer opposite the device die for covering the semiconductor device;
a dam for supporting the carrier layer above the device die, the dam being located therebetween and being formed of a dam
material, the device die, the dam, and the carrier layer forming a sealed cavity enclosing the semiconductor device;

a first sealant portion for attaching the dam to the device die, the first sealant portion being located therebetween and
being formed of a material other than the dam material;

a means for attaching the dam to the carrier layer;
an intra-dam sealant covering dam surfaces that comprise an outer surface of the sealed cavity; and
an outer-wall dam covering the sealant, the intra-dam sealant being between the dam surfaces and outer-wall dam;
wherein neither the first sealant portion, nor the means for attaching the dam to the carrier layer, nor a combination thereof,
independently bridge a gap between the device die and the carrier layer.

US Pat. No. 9,312,299

IMAGE SENSOR WITH DIELECTRIC CHARGE TRAPPING DEVICE

OmniVision Technologies, ...

1. An image sensor pixel, comprising:
a photosensitive element disposed in a semiconductor layer to receive electromagnetic radiation of a first type along a vertical
axis;

a floating diffusion region disposed in the semiconductor layer;
a transfer gate disposed on the semiconductor layer between the photosensitive element and the floating diffusion region to
control a flow of charge produced in the photosensitive element to the floating diffusion region;

a dielectric charge trapping device disposed on the semiconductor layer to receive electromagnetic radiation of a second type
along the vertical axis and to trap charges in response to the electromagnetic radiation of the second type, wherein the dielectric
charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges;

a first metal contact coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge
trapping device; and

a light source coupled to emit an optical erase signal along the vertical axis to erase charge trapped in the dielectric charge
trapping device, wherein the light source comprises:

a light emitting diode; and
a waveguide optically coupled to the light emitting diode and configured to emit the optical erase signal along the vertical
axis.

US Pat. No. 9,300,877

OPTICAL ZOOM IMAGING SYSTEMS AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. An optical zoom imaging system, comprising:
first, second, and third image sensors disposed on a common substrate; and
first, second, and third optical blocks in optical communication with the first, second, and third image sensors, respectively;
the first, second, and third optical blocks having different respective magnifications;
the first optical block and the first image sensor having a first field of view size, the second optical block and the second
image sensor having a second field of view size different from the first field of view size, and the third optical block and
the third image sensor having a third field of view size different from the first and second field of view sizes;

wherein:
the first optical block comprises one or more first lens pieces, a first input reflective surface, and a first output reflective
surface,

the first input reflective surface is structurally configured to reflect light incident on the first optical block onto the
one or more first lens pieces,

the first output reflective surface is structurally configured to reflect light exiting the one or more first lens pieces
onto the first image sensor,

the second optical block comprises one or more second lens pieces, a second input reflective surface, and a second output
reflective surface,

the second input reflective surface is structurally configured to reflect light incident on the second optical block onto
the one or more second lens pieces,

the second output reflective surface is structurally configured to reflect light exiting the one or more second lens pieces
onto the second image sensor,

the third optical block comprises one or more third lens pieces, a third input reflective surface, and a third output reflective
surface,

the third input reflective surface is structurally configured to reflect light incident on the third optical block onto the
one or more third lens pieces, and

the third output reflective surface is structurally configured to reflect light exiting the one or more third lens pieces
onto the third image sensor,

the optical zoom imaging system has length, width, and height,
the first, second and third image sensors are separated from each other in the lengthwise direction,
the first, second, and third optical blocks are disposed over the first, second, and third image sensors, respectively, in
the height direction,

the first input reflective surface, the one or more first lens pieces, and the first output reflective surface are separated
from each other in the widthwise direction,

the second input reflective surface, the one or more second lens pieces, and the second output reflective surface are separated
from each other in the widthwise direction, and

the third input reflective surface, the one or more third lens pieces, and the third output reflective surface are separated
from each other in the widthwise direction.

US Pat. No. 9,118,851

HIGH DYNAMIC RANGE IMAGE SENSOR READ OUT ARCHITECTURE

OmniVision Technologies, ...

1. A method of controlling a pixel array, comprising:
reading out image data from pixel cells of a row i of the pixel array with second transfer control signals coupled to be received
by transfer transistors included in the pixels cells of the row of the pixel array that is being read out; and

independently controlling exposure times for pixel cells in other rows of the pixel array that are not being read out with
first transfer control signals coupled to be received by transfer transistors included in the pixel cells in the other rows
of the pixel array that are not being read out while the image data is read out from the pixel cells of row i of the pixel
array, wherein only one of the first and second transfer control signals coupled to be received by a transfer transistor included
in a pixel cell is active at a time.

US Pat. No. 9,467,606

WAFER LEVEL STEPPED SENSOR HOLDER

OmniVision Technologies, ...

7. An imaging system, comprising:
an image sensor including a pixel array having a plurality of pixel cells arranged therein;
a spacer having a thinned wall that defines a step and a recess in an interior wall at a first end of the spacer, wherein
the image sensor is bonded to the step within the recess of the spacer such that the image sensor is accepted completely within
the recess of the spacer, and wherein lateral sidewalls of the image sensor are enclosed completely by the thinned wall of
the spacer such that the thinned wall of the spacer blocks completely all light leaks proximate to the lateral sidewalls of
the image sensor;

a glass wafer mounted on a second end of the spacer; and
a lens mounted on the glass wafer, wherein light is to be directed through the lens to the image sensor;
control circuitry coupled to the pixel array to control operation of the pixel array; and
readout circuitry coupled to the pixel array to readout image data from the plurality of pixel cells.

US Pat. No. 9,444,999

FEATURE DETECTION IN IMAGE CAPTURE

OmniVision Technologies, ...

1. A machine implemented method, the method comprising:
identifying an approximate location of a feature in a preliminary image that was captured by an image sensor;
computing, using processing circuitry coupled to the image sensor, a gradient phase map of image pixel intensities within
the approximate location, wherein the gradient phase map assigns each pixel a gradient phase angle which is the direction
of the gradient at the pixel, and wherein the direction of the gradient shows the direction of the largest pixel intensity
change with respect to surrounding pixels;

determining a projection result by applying a projection function to the gradient phase map, wherein the projection function
includes an integral projection function, comprising:

a vertical integral projection function (“IPFv”) including a mean of each pixel's gradient phase angle in the approximate location, for each column of the approximate location
in a vertical direction; and

a horizontal integral projection function (“IPFh”) including a mean of each pixel's gradient phase angle in the approximate location, for each row of the approximate location
in a horizontal direction; and

analyzing the projection result to determine a state of the feature.

US Pat. No. 9,184,200

INFRARED REFLECTION/ABSORPTION LAYER FOR REDUCING GHOST IMAGE OF INFRARED REFLECTION NOISE AND IMAGE SENSOR USING THE SAME

Omnivision Technologies, ...

1. An image sensor, comprising:
a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal
indicative of the IR radiation;

a redistribution layer (RDL) under the photosensing element, the RDL comprising a pattern of conductors for receiving the
electrical signal; and

an isolation layer between the photosensing element and the RDL, the isolation layer being adapted to absorb the IR radiation
such that a substantial portion of the IR radiation does not impinge upon the RDL.

US Pat. No. 9,160,958

METHOD OF READING OUT AN IMAGE SENSOR WITH TRANSFER GATE BOOST

OmniVision Technologies, ...

1. A method for reading out an image sensor having a first photosensitive region, a second photosensitive region, a shared
charge-to-voltage mechanism, a first transfer transistor disposed to selectively couple the first photosensitive region to
the shared charge-to-voltage mechanism, and a second transfer transistor disposed to selectively coupled the second photosensitive
region to the shared charge-to-voltage mechanism, the method comprising:
enabling the first transfer transistor to transfer photo-generated charge from the first photosensitive region to the shared
charge-to-voltage mechanism; and

no more than partially enabling the second transfer transistor to partially turn on the second transfer transistor to increase
a capacitance of the shared charge-to-voltage mechanism while the photo-generated charge is transferred from the first photosensitive
region to the shared charge-to-voltage mechanism.

US Pat. No. 9,485,424

IMAGE PROCESSING SYSTEM AND METHOD USING SERIALLY COUPLED CAMERAS FOR PROVIDING EXTENDED VIEW

OmniVision Technologies, ...

1. An imaging system for providing an extended-view image, comprising:
a plurality of cameras coupled in series for transmitting image data through the series to serially compose, within the cameras,
the extended-view image from each of a plurality of in-situ images captured by the plurality of cameras, respectively, each
of the cameras including:

(a) an image sensing unit for generating a respective one of the plurality of in-situ images, and
(b) an image data processing unit configured to combine the respective one of the plurality of in-situ images with a first
composite image to produce a second composite image that, for each of the cameras except last camera in the series, is utilized
by next camera in the series as the first composite image.

US Pat. No. 9,294,693

IMAGE SENSOR WITH PIXEL UNITS HAVING INTERLEAVED PHOTODIODES

OmniVision Technologies, ...

1. An image sensor, comprising a plurality of photodiodes arranged into an array of rows and columns, wherein the plurality
of photodiodes are grouped into pixel units, each pixel unit including a first, a second, a third, and a fourth photodiode
and shared pixel unit circuitry coupled to each of the first, second, third, and fourth photodiodes, wherein the shared pixel
unit circuitry of each one of the pixel units comprises a single shared source follower transistor, wherein the first and
second photodiodes are in a first column of the array and the third and fourth photodiodes are in a second column of the array,
and wherein the third photodiode is in a row that is between a row of the first photodiode and a row of the second photodiode.

US Pat. No. 9,247,162

SYSTEM AND METHOD FOR DIGITAL CORRELATED DOUBLE SAMPLING IN AN IMAGE SENSOR

OmniVision Technologies, ...

1. A system for digital correlated double sampling for an image sensor having a plurality of pixels, the system comprising:
an analog-to-digital convertor (ADC) stage for converting analog data into digital image data and outputting reset data;
a memory for storing (i) one or more most significant bits (MSB) of the digital image data, and (ii) one or more MSB of the
reset data;

a LSB image data storage latch for storing one or more least significant bits (LSB) of the digital image data;
a LSB reset data storage latch for storing one or more LSB of the reset data;
a combined image data latch for storing recombined digital image data based upon (i) a portion of the LSBs from the at least
one LSB image data storage latch and (ii) corresponding MSBs of the digital image data from the memory for a selected set
of the digital image data to be correlated double sampled;

a combined reset data latch for storing recombined reset data based upon (i) a portion of the LSBs from the at least one LSB
reset data storage latch and (ii) corresponding MSBs of the reset data from the memory for a selected set of the reset data
to be correlated double sampled; and,

a digital correlated double sampling (DCDS) stage for generating digitally correlated double sampled image data based upon
the recombined digital image data and the recombined reset data.

US Pat. No. 9,431,452

BACK SIDE ILLUMINATED IMAGE SENSOR PIXEL WITH DIELECTRIC LAYER REFLECTING RING

OmniVision Technologies, ...

1. An image sensor, comprising:
a photodiode disposed in semiconductor material proximate to a front side of the semiconductor material to accumulate image
charge in response to light directed through a back side of the semiconductor material and through the photodiode;

a metal layer reflector structure disposed in a dielectric layer proximate to the front side of the semiconductor material
such that the light that is directed through the back side of the semiconductor material and through the photodiode is reflected
from the metal layer reflector structure back through the photodiode;

a contact etch stop layer disposed over the front side of the semiconductor material between the dielectric layer and the
photodiode in the semiconductor material; and

a contact reflecting ring structure disposed in the dielectric layer, wherein all of the contacting reflecting ring structure
is disposed between the metal layer reflector structure and the contact etch stop layer, wherein the contact reflecting ring
structure encloses a portion of a light guide in the dielectric layer between the metal layer reflector structure and the
photodiode in the semiconductor material such that the light that is directed through the photodiode and reflected from the
metal layer reflector structure back through the photodiode is confined to remain within an interior of the contact reflecting
ring structure when passing through the dielectric layer between the photodiode and the metal layer reflector structure.

US Pat. No. 9,270,953

WAFER LEVEL CAMERA HAVING MOVABLE COLOR FILTER GROUPING

OmniVision Technologies, ...

1. An image capture unit, comprising:
an image sensor including a pixel array having M pixels;
a lens structure disposed proximate to the image sensor to focus an image onto the image sensor;
a movable color filter grouping disposed over the lens structure, wherein the movable color filter grouping includes a plurality
of N color filters arranged therein such that all light that is incident upon the image sensor through the lens structure
is directed through only one of the plurality of N color filters of the movable color filter grouping per each exposure of
the image sensor;

a positioning device attached to the movable color filter grouping to reposition the movable color filter grouping between
each exposure of the image sensor such that substantially all of the light that is incident upon the image sensor through
the lens structure is directed through a different one of the plurality of N color filters for each successive exposure of
the image sensor; and

circuitry and logic coupled to the image sensor to:
capture N single-color images each with M pixel resolution, and
combine the N single-color images into one multi-color image with substantially M×N pixel resolution.

US Pat. No. 9,258,465

IMAGE DEVICE HAVING EFFICIENT HEAT TRANSFER, AND ASSOCIATED SYSTEMS

OmniVision Technologies, ...

1. An imaging device having efficient heat transfer, the imaging device comprising:
a housing forming a space therewithin;
an image sensor, located within the space and oriented in a first orientation, for generating image data from light imaged
thereon by one or more lenses;

a memory device, located within the space, for storing the image data; and,
an imaging circuit, located within the space, for manipulating the image data, the imaging circuit oriented in a second orientation,
the second orientation opposing the first orientation such that heat is transferred outside of the space;

wherein:
the imaging circuit contacts an imaging circuit heat sink embedded within the printed circuit board to which the housing is
mounted thereon;

the imaging circuit is a flip chip imaging circuit having an imaging circuit chip and an imaging circuit heat sink coupled
thereto, and

the imaging circuit heat sink contacts the printed circuit board to which the housing is mounted thereon.

US Pat. No. 9,063,556

BANDGAP REFERENCE CIRCUIT WITH OFFSET VOLTAGE REMOVAL

OmniVision Technologies, ...

1. A bandgap reference circuit, comprising:
an operational transconductance amplifier (OTA) having an inverting input and a non-inverting input;
a first switch coupled between the inverting input and an output of the OTA to provide a negative feedback loop around the
OTA when the first switch is closed;

a capacitor having a first end coupled to the inverting input, and a second end;
a second switch coupled to the second end of the capacitor, wherein the capacitor is charged to a voltage substantially equal
to an offset voltage of the OTA when the second switch is closed;

a third switch coupled to the second end of the capacitor, wherein the voltage across the capacitor is subtracted from an
input loop of the reference circuit to cancel the offset voltage of the OTA when the third switch is closed;

a first bipolar transistor having a collector coupled to a first node between a first resistor and the third switch; and
a second bipolar transistor having a collector coupled to a second node between a second resistor and the second switch, wherein
the non-inverting input of the OTA is coupled to the second node, wherein the bandgap reference circuit is to be coupled to
receive a first signal that synchronizes the readout of each row of a pixel array included in an imaging sensor, and wherein
the bandgap reference circuit is configured to refresh the voltage reference during the readout of each row of the pixel array
in response to the first signal.

US Pat. No. 9,806,117

BIASED DEEP TRENCH ISOLATION

OmniVision Technologies, ...

1. A system of electrical interconnection, comprising:
a plurality of deep trench isolation structures disposed in a semiconductor material, wherein the plurality of deep trench
isolation structures include a dielectric material and a conductive material, and wherein the dielectric material is disposed
between the conductive material and the semiconductor material;

a through-semiconductor-via disposed in the semiconductor material and coupled to a negative voltage source;
an optical shield disposed proximate to a backside of the semiconductor material to block a portion of image light from reaching
the semiconductor material, wherein the optical shield is coupled to the through-semiconductor-via and the plurality of deep
trench isolation structures with metal interconnects.

US Pat. No. 9,438,866

IMAGE SENSOR WITH SCALED FILTER ARRAY AND IN-PIXEL BINNING

OmniVision Technologies, ...

1. An apparatus comprising:
a pixel array including a plurality of individual pixels grouped into pixel kernels having two or more individual pixels,
wherein each pixel kernel includes a floating diffusion that is electrically coupled to all individual pixels in the kernel;

a color filter array positioned over and optically coupled to the pixel array, the color filter array comprising a plurality
of tiled minimal repeating units, each minimal repeating unit including a plurality of scaled filters, each scaled filter
having a photoresponse selected from among two or more different photoresponses, wherein the individual pixels within each
pixel kernel are optically coupled to a corresponding scaled filter; and

circuitry and logic coupled to the pixel array to cause the apparatus to operate in multiple image-capture modes, including:
a first mode wherein signals from individual pixels within the pixel array are individually transferred to their floating
diffusion and read, resulting in a high-resolution, low-sensitivity image, and

a second mode wherein signals from all individual pixels in a pixel kernel are binned into the floating diffusion of the kernel
and read, resulting in a low-resolution, high-sensitivity image;

wherein the circuitry and logic further operate the first mode and the second mode in a first sequence or a second sequence,
the first sequence comprising:

using the first mode to capture the high-resolution, low-sensitivity image,
identifying a feature of interest in the high-resolution, low-sensitivity image,
processing only a subset of pixels from the high-resolution, low-sensitivity image that include at least the feature of interest
to create a high-resolution, low-sensitivity sub-image, and

using the second mode to capture a low-resolution, high-sensitivity sub-image of the subset of pixels that include at least
the feature of interest.

US Pat. No. 9,379,159

METHOD OF FABRICATING MULTI-WAFER IMAGE SENSOR

OmniVision Technologies, ...

1. A method of fabricating an image system, the method comprising:
forming a pixel array in an imaging region of a semiconductor substrate;
forming a trench in a peripheral region of the semiconductor substrate after forming the pixel array, wherein the peripheral
region is on a perimeter of the imaging region;

filling the trench with an insulating material;
forming an interconnect layer spanning the imaging region and the peripheral region after filling the trench with the insulating
material, wherein a first wafer includes the interconnect layer and the semiconductor substrate, and wherein the insulating
material is planarized prior to forming the interconnect layer;

bonding the first wafer to a second wafer;
thinning a backside of the semiconductor substrate to expose the insulating material;
forming a via cavity through the insulating material, wherein the via cavity extends down to a second interconnect layer of
the second wafer; and

filling the via cavity with a conductive material to form a via, wherein the insulating material electrically insulates the
conductive material from the semiconductor substrate.

US Pat. No. 9,316,849

MOUNTING SYSTEM FOR GLASSES FRAMES

OmniVision Technologies, ...

1. A mounting system for mounting a device onto a glasses frame, the mounting system comprising
a frame attachment portion for removably attaching to the glasses frame including:
a spring clip including a forward portion and a rearward portion, separated in the lengthwise direction, for applying pressure
on the glasses frame from a first side of the glasses frame, and a middle portion for applying pressure on the glasses frame
from a second side of the glasses frame;

a magnet for coupling to the device, the magnet being housed in a magnet housing, the magnet housing attached to the middle
portion of the spring clip;

a pad located between at least part of the middle portion and the forward and rearward portions and applying pressure from
the second side; and,

a holding seat for securing the middle portion with the magnet housing,
wherein the middle portion sits between the holding seat and the magnet housing in a notch of the holding seat.

US Pat. No. 9,299,732

STACKED CHIP SPAD IMAGE SENSOR

OmniVision Technologies, ...

1. An imaging sensor system, comprising:
a first semiconductor layer of a first wafer;
a Single-Photon Avalanche Diode (SPAD) imaging array formed in the first semiconductor layer, wherein the SPAD imaging array
includes an N number of pixels, each pixel including a SPAD region formed in a front side of the first semiconductor layer,
and wherein each SPAD region is configured to receive photons from a backside of the first semiconductor layer;

a color filter layer disposed on the backside of the first semiconductor layer;
a first interconnect layer disposed on the front side of the first semiconductor layer;
a second semiconductor layer of a second wafer;
a second interconnect layer disposed on the second semiconductor layer, wherein the first wafer is bonded to the second wafer
at a bonding interface between the first interconnect layer and the second interconnect layer;

at least N number of quenching elements formed in the second semiconductor layer, wherein each of the quenching elements is
coupled to quench avalanching of a respective SPAD region by lowering a bias voltage; and

a plurality of digital counters formed in the second semiconductor layer and electrically coupled to the SPAD imaging array
by way of the first and second interconnect layers, wherein the plurality of digital counters includes at least N number of
digital counters, wherein each of the N number of digital counters are configured to count output pulses generated by a respective
SPAD region.

US Pat. No. 9,202,841

METHOD OF FABRICATING SEMICONDUCTOR STRUCTURE

OMNIVISION TECHNOLOGIES (...

1. A method of fabricating a semiconductor structure, comprising:
providing a substrate defining a connecting section and a functional section, wherein the substrate includes a connecting
layer in the connecting section;

forming a protective insulating layer over the substrate, the protecting insulating layer covering both the connecting and
functional sections;

etching the protective insulating layer and the substrate to form at least one first opening, each of the at least one first
opening exposing the connecting layer;

lining a sidewall of each of the at least one first opening with a sidewall insulating layer;
filling a conductive material into each of the at least one first opening to form a conductive structure;
forming a metal layer over the protective insulating layer, the metal layer covering both the connecting and functional sections;
and

performing a selective etching process on the metal layer to form a pad above the connecting section and a metal structure
above the functional section, such that the pad is located on the conductive structure and is connected to the connecting
layer via the conductive structure.

US Pat. No. 9,196,022

IMAGE TRANSFORMATION AND MULTI-VIEW OUTPUT SYSTEMS AND METHODS

OmniVision Technologies, ...

1. A method for image transformation and multi-view output to a display device, comprising:
receiving raw image data, generated by an image sensor, into a memory of a system that includes a lookup table stored in non-volatile
memory and a reverse mapper;

mapping, using the lookup table and a coordinate mapping module of the reverse mapper, each pixel coordinate of output view
data, stored in the memory, to a location in raw image data using coordinate mapping that corrects at least one of (a) perspective
and (b) distortion within the raw image;

determining, using an intensity setting module of the reverse mapper, an intensity of each output pixel of the output view
data based upon information within the raw image data proximate the correspondingly mapped location; and

outputting the output view data to the display device.

US Pat. No. 9,691,810

CURVED IMAGE SENSOR

OmniVision Technologies, ...

1. An image sensor, comprising:
a plurality of photodiodes arranged in an array and disposed in a semiconductor material, wherein pinning wells are disposed
between individual photodiodes in the plurality of photodiodes to electrically isolate the individual photodiodes;

a microlens layer disposed proximate to the semiconductor material, wherein the microlens layer is optically aligned with
the plurality of photodiodes; and

a spacer layer disposed between the semiconductor material and the microlens layer, wherein the spacer layer has a concave
cross-sectional profile across the array, and wherein the microlens layer is conformal with the concave cross-sectional profile
of the spacer layer.

US Pat. No. 9,590,005

HIGH DYNAMIC RANGE IMAGE SENSOR WITH REDUCED SENSITIVITY TO HIGH INTENSITY LIGHT

OmniVision Technologies, ...

1. A method of fabricating an image sensor, comprising:
arranging a first plurality of photodiodes in a semiconductor substrate;
interspersing a second plurality of photodiodes among the first plurality of photodiodes in the semiconductor substrate, wherein
incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of
photodiodes, wherein the first plurality of photodiodes have greater sensitivity to the incident light than the second plurality
of photodiodes;

providing a metal film layer over the surface of the semiconductor substrate over the second plurality of photodiodes and
not over the first plurality of photodiodes; and

providing a metal grid over the surface of the semiconductor substrate, wherein the metal grid includes a first plurality
of openings through which the incident light is directed through metal grid, and then through the surface into the first plurality
of photodiodes, wherein the metal grid further includes a second plurality of openings through which the incident light is
directed through the metal grid, and then through the metal film layer and the surface into the second plurality of photodiodes.

US Pat. No. 9,513,655

INTERFACE CIRCUIT WITH VARIABLE OUTPUT SWING AND OPEN TERMINATION MODE FOR TRANSMITTING SIGNALS

OmniVision Technologies, ...

1. An interface circuit for transmitting a signal, comprising:
a pre-driver coupled to receive a single-ended signal, wherein the pre-driver is coupled to convert the single-ended signal
to an intermediate differential signal, wherein the intermediate differential signal has a first voltage swing responsive
to a first supply voltage supplied to the pre-driver;

an output driver coupled to receive the intermediate differential signal from the pre-driver, wherein the output driver is
coupled to convert the intermediate differential signal to an output differential signal, wherein the output differential
signal has a second voltage swing responsive to a second supply voltage supplied to the output driver;

a replica bias circuit coupled to receive the first supply voltage to generate a bias signal, wherein the replica bias circuit
is coupled to receive an open termination enable signal to adjust the bias signal in response to the open termination enable
signal;

an internal regulator coupled to receive the bias signal and the first supply voltage to supply the second voltage to the
output driver in response to the bias signal; and

an open termination circuit coupled to an output of the output driver, wherein the open termination circuit is coupled to
receive the open termination enable signal to couple an internal load to the output of the output driver in response to the
open termination enable signal.

US Pat. No. 9,478,580

GROUNDING SYSTEM FOR INTEGRATED CIRCUITS OF PARTICULAR USEFULNESS FOR CIRCUITS INCORPORATING BACKSIDE-ILLUMINATED PHOTOSENSOR ARRAYS

OmniVision Technologies, ...

1. A method of manufacture of a photosensor array integrated circuit adapted to backside illumination comprising:
forming N-channel MOS (NMOS) transistors in a first side of a device wafer;
forming at least one heavily P-doped edge contact doped region, the heavily P-doped edge contact region formed in the first
side of the device wafer;

performing at least one metallization sequence comprising
1) forming a dielectric layer on the first side of the device wafer,
2) opening holes in the dielectric layer on the first side of the device wafer,
3) depositing a metal layer on the first side of the device wafer, and
4) photolithographically defining metal shapes on the metal layer on the first side of the device wafer;
providing a structural layer, and thinning a second side of the device wafer;
opening at least one substrate-stripped zone by removing silicon of the device wafer and exposing the at least one heavily
P-doped edge-contact doped region to the substrate-stripped zone, the substrate-stripped zone associated with a bondpad;

depositing backside metal on the second side of the device wafer with sidewall metal at edges of the substrate-stripped zone,
the sidewall metal contacting the at least one heavily P-doped edge-contact doped region; and

defining openings in the backside metal for windows over photosensors and isolation gaps between backside metal and other
metal of the integrated circuit.

US Pat. No. 9,461,088

IMAGE SENSOR PIXEL WITH MULTIPLE STORAGE NODES

OmniVision Technologies, ...

1. An image sensor pixel comprising:
a photodiode for generating image charge in response to image light;
a first storage node;
a second storage node, wherein the first storage node, the second storage node, and the photodiode have a first doping polarity;
a first transfer storage gate (“TSG”) coupled to transfer the image charge from the photodiode to the first storage node,
wherein the first TSG is disposed over a majority portion of the first storage node;

a second TSG coupled to transfer the image charge from the first storage node to the second storage node, wherein the second
TSG is disposed over a majority portion of the second storage node;

a floating diffusion; and
an output gate coupled to transfer the image charge from the second storage node to the floating diffusion.

US Pat. No. 9,448,415

SPATIALLY INTERLEAVED POLARIZATION CONVERTER FOR LCOS DISPLAY

OmniVision Technologies, ...

1. A spatially-interleaved polarization converter comprising:
optical elements including an input lenslet array, a first double-pass quarter-wave retarder, a second double-pass quarter-wave
retarder, a polarizing beam splitter (PBS), and a wave-retarder array;

the input lenslet array having a plurality of input lenslets with parallel respective lens optical axes, the wave-retarder
array having a noncontiguous plurality of half-wave retarders with parallel respective retarder optical axes that are parallel
to the lens optical axes;

the PBS having a planar beam-splitting element located (a) between the input lenslet array and the wave-retarder array and
(b) between the first double-pass quarter-wave retarder and the second double-pass quarter-wave retarder;

the optical elements being configured to convert an input light beam to an output light beam having a plurality of first s-polarized
beamlets interleaved with a plurality of second s-polarized beamlets.

US Pat. No. 9,418,193

ARRAYED IMAGING SYSTEMS HAVING IMPROVED ALIGNMENT AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. A method for manufacturing arrayed imaging systems, each imaging system in the arrayed imaging systems having a detector
associated therewith, the method comprising:
fabricating an array of layered optical elements by sequentially applying a fabrication master, each layered optical element
being part of a respective imaging system of the arrayed imaging systems and optically connected with the detector associated
with that imaging system;

wherein sequentially applying the fabrication master includes aligning the fabrication master to a common base, with alignment
error not exceeding than two wavelengths of electromagnetic energy detectable by the detector.

US Pat. No. 9,343,499

INTEGRATED CIRCUIT STACK WITH STRENGTHENED WAFER BONDING

OmniVision Technologies, ...

1. An integrated circuit system, comprising:
a first device wafer having a first semiconductor layer proximate to a first metal layer including a first conductor disposed
within a first dielectric layer;

a second device wafer having a second semiconductor layer proximate to a second metal layer including a second conductor disposed
within a second dielectric layer;

a wafer bonding region disposed at an interface of a front side of the first dielectric layer of the first device wafer and
a front side of the second dielectric layer of the second device wafer such that wafer bonding region bonds the first device
wafer to the second device wafer, wherein the wafer bonding region includes dielectric material having a higher silicon concentration
than a dielectric material of the first and second dielectric layers of the first and second device wafers; and

a conductive path coupling the first conductor to the second conductor, wherein the conductive path is formed in a cavity
etched through the wafer bonding region between the first conductor and the second conductor.

US Pat. No. 9,294,563

APPARATUS AND METHOD FOR LEVEL-BASED SELF-ADJUSTING PEER-TO-PEER MEDIA STREAMING

OmniVision Technologies, ...

1. A peer-to-peer (P2P) network for media streaming, comprising a plurality of peer modules connected on the network, the
plurality of peer modules comprising:
a source peer module associated with a highest logical level of the network; and
a plurality of viewer peer modules, each viewer peer module (a) being associated with a logical network level being a quantity
of logical network levels that the viewer peer module is logically below the source peer module, and (b) storing a list of
partner peer modules to which the peer module is communicatively connected and a list of candidate partner peer modules to
which the peer module can potentially become communicatively connected,

the P2P network being configured such that
(a) each viewer peer module can be connected to no more than one up-peer module logically above the viewer peer module,
(b) each viewer peer module can be connected to any integer number of down-peer modules logically below the viewer peer module,
and

(c) a new viewer peer module may join the network by performing the following steps:
setting its logical network level as the lowest level in the network;
requesting an initial list of candidate partner peer modules from a server of the P2P network;
receiving the list of candidate partner peer modules from the server, the list depending on the IP address proximity to the
new peer module;

saving the list to its candidate partner list;
attempting to make a connection with a candidate partner peer on the initial list using a transport layer protocol selected
from a group consisting of RUDP and TCP;

saving the candidate partner peer to which the new peer module successfully connects to its list of partner peer modules;
and

setting its logical network level to one more than the logical network level of the up-peer module with which the new viewer
peer module establishes communication.

US Pat. No. 9,236,411

COLOR FILTER PATTERNING USING HARD MASK

OmniVision Technologies, ...

1. An apparatus comprising:
a color filter arrangement including a set of color filters having a substantially planar bottom surface adapted to be placed
on a surface of a substrate that includes a semiconductor layer having a pixel array formed in or on a front surface thereof,
the set of color filters comprising:

first and second filters of a first color, each of the first and second filters having first and second hard mask layers thereon,
a third filter of a second color, the third filter having the second hard mask layer thereon, and
a fourth filter of a third color, the fourth filter having no hard mask layer thereon,
wherein the first, second, third, and fourth filters form the bottom surface of the color filter arrangement and the first
and second hard masks and the fourth filter form a top surface of the color filter arrangement.

US Pat. No. 9,865,642

RGB-IR PHOTOSENSOR WITH NONUNIFORM BURIED P-WELL DEPTH PROFILE FOR REDUCED CROSS TALK AND ENHANCED INFRARED SENSITIVITY

OmniVision Technologies, ...

1. A method of detecting a color image comprising:
projecting the image onto a monolithic photosensor array having a plurality of tiling units, where each tiling unit has at
least a first and a second photosensor type;

receiving in the photosensors of the first type of the array photons of a first wavelength band;
receiving at least some photons of a second wavelength band through the photosensors of the first type of the array into an
underlying high-resistivity epitaxial photon-absorbing region of photosensors of the second type of the array; and

reading the photosensors of the array;
wherein the first and second wavelength band are different.

US Pat. No. 9,560,771

BALL GRID ARRAY AND LAND GRID ARRAY HAVING MODIFIED FOOTPRINT

OmniVision Technologies, ...

12. An apparatus comprising:
a substrate having a surface, the substrate being adapted to be mounted to a printed circuit board; and
a plurality of electrically-conductive attachments arranged on the surface of the substrate to mount the substrate to the
printed circuit board, the plurality of electrically-conductive attachments including:

a plurality of solder lands arranged into a land grid array on the surface of the substrate, wherein adjacent solder lands
in the land grid array are positioned at a pitch from each other and wherein solder lands in the land grid array are circular
and made of solder paste, and

one or more solder islands positioned on the surface of the substrate and included in at least one solder land in the land
grid array, each solder island having a mass of solder greater than the mass of any of the plurality of solder lands and having
a larger size and different shape than the size and shape of any of the plurality of solder lands.

US Pat. No. 9,553,123

BACK-ILLUMINATED SENSOR CHIPS

OMNIVISION TECHNOLOGIES (...

1. A back-illuminated sensor chip, comprising one or more pixel areas each comprising a plurality of first pixels and a plurality
of second pixels located in a plane and arranged in a matrix, wherein each of the one or more pixel areas further comprises:
a central portion consisting of the plurality of first pixels located in vicinity of a center of the pixel area; and
a peripheral portion surrounding the central portion and consisting of the plurality of second pixels in the pixel area,
wherein: the plurality of first pixels in the central portion have a first height in a vertical direction perpendicular to
the plane; the plurality of second pixels in the peripheral portion have a second height in the vertical direction; and

the second height is greater than the first height so that the peripheral portion protrudes outward beyond the central portion,
wherein: the central portion further comprises:
a first portion, centrally situated in the central portion;
a second portion, surrounding the first portion and protruding outward beyond the first portion;
wherein the peripheral portion has a first ion concentration;
the second portion has a third ion concentration;
the first portion has a fourth ion concentration;
the first ion concentration is higher than the third ion concentration; and
the third ion concentration is higher than the fourth ion concentration.

US Pat. No. 9,521,292

IMAGE SENSOR APPARATUS AND METHOD FOR EMBEDDING RECOVERABLE DATA ON IMAGE SENSOR PIXEL ARRAYS

OmniVision Technologies, ...

1. An image sensor apparatus, comprising:
an image sensor for generating image data in a pixel array corresponding to an optical image; and
a processor for:
altering the image data to embed a first feature-dependent code associated with a first feature of the image data and a second
feature-dependent code associated with a second feature of the image data, and

generating a digital image from the altered image data,
wherein the first feature-dependent code is embedded at a first fixed location of the pixel array, the second feature-dependent
code is embedded at a second fixed location of the pixel array, the first fixed location and second fixed location each corresponding
to a different non-overlapping group of pixels within the pixel array, the first and second fixed locations being predetermined
based upon a respective type of the first and second features and distinct from a respective location of the first and second
features within the image data.

US Pat. No. 9,520,431

SELF-ALIGNED ISOLATION STRUCTURES AND LIGHT FILTERS

OmniVision Technologies, ...

1. An image sensor, the image sensor comprising:
a semiconductor layer including a plurality of photodiodes, wherein the semiconductor layer has a front side and a back side;
a plurality of isolation structures disposed in the back side of the semiconductor layer between individual photodiodes in
the plurality of photodiodes, wherein the plurality of isolation structures extends into the back side of the semiconductor
layer a first depth and extends out of the back side of the semiconductor layer a first length;

a plurality of light filters disposed proximate to the back side of the semiconductor layer, wherein the plurality of isolation
structures is disposed between individual light filters in the plurality of light filters; and

an antireflection coating disposed between the semiconductor layer and the plurality of light filters.

US Pat. No. 9,231,015

BACKSIDE-ILLUMINATED PHOTOSENSOR ARRAY WITH WHITE, YELLOW AND RED-SENSITIVE ELEMENTS

OmniVision Technologies, ...

1. A monolithic back-side-illuminated (BSI) photosensor array tiled with a plurality of a multiple-pixel cells, the multiple-pixel
cell comprising a first pixel sensor primarily sensitive to red light, a second pixel sensor primarily sensitive to red and
green light, and a third pixel sensor having panchromatic sensitivity, the pixel sensors of each multiple-pixel cell laterally
adjacent each other, the photo sensor array further comprising apparatus for determining a green signal by subtracting a reading
of the first pixel sensor from a reading of the second pixel sensor.

US Pat. No. 9,147,704

DUAL PIXEL-SIZED COLOR IMAGE SENSORS AND METHODS FOR MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A dual pixel-size color image sensor, comprising:
an imaging surface, for imaging of incident light; and
a plurality of color pixels, each color pixel comprising (a) four large photosites, including two large first-color photosites
sensitive to a first color of the incident light, and (b) four small photosites including two small first-color photosites
sensitive to the first color of the incident light, the large and small first-color photosites being arranged such that connected
regions of the imaging surface, not associated with large first-color photosites and not associated with small first-color
photosites, are not continuous straight lines, all connected regions, except connected regions located at perimeter of the
imaging surface, forming linear segments, wherein the linear segments have at least one property selected from the group consisting
of:

(i) linear segments of each connected pair of the linear segments are at a relative angle of approximately 90° with respect
to each other, and

(ii) each of the linear segments being no longer than total length of two large first-color photosites and one small first-color
photosite.

US Pat. No. 9,111,993

CONDUCTIVE TRENCH ISOLATION

OmniVision Technologies, ...

1. An image sensor, the image sensor comprising:
a plurality of photodiodes disposed in a semiconductor layer;
a plurality of deep trench isolation regions disposed in the semiconductor layer, the plurality of deep trench isolation regions
including:

(1) an oxide layer disposed on an inner surface of the plurality of deep trench isolation regions; and
(2) a conductive fill disposed in the plurality of deep trench isolation regions, wherein the oxide layer is disposed between
the semiconductor layer and the conductive fill;

a plurality of pinning wells disposed in the semiconductor layer, wherein the plurality of pinning wells in combination with
the plurality of deep trench isolation regions separate individual photodiodes in the plurality of photodiodes; and

a fixed charge layer disposed on the semiconductor layer, wherein the plurality of deep trench isolation regions are disposed
between the plurality of pinning wells and the fixed charge layer.

US Pat. No. 9,812,478

AEROGEL-ENCAPSULATED IMAGE SENSOR AND MANUFACTURING METHOD FOR SAME

OmniVision Technologies, ...

1. An aerogel-encapsulated image sensor comprising:
a device die having an image sensor that includes a plurality of pixels forming a pixel array;
an aerogel layer that encapsulates the image sensor such that the pixel array is between a bottom surface of the device die
and the aerogel layer; and

a microlens array that includes a plurality of microlenses, each microlens aligned to a respective one of the plurality of
pixels, the microlens array being between the pixel array and a region of the aerogel layer that (a) is located directly above
the pixel array and (b) has a top outer surface that is part of a top outer surface of the aerogel-encapsulated image sensor.

US Pat. No. 9,658,336

PROGRAMMABLE CURRENT SOURCE FOR A TIME OF FLIGHT 3D IMAGE SENSOR

OmniVision Technologies, ...

1. A programmable current source array having a plurality of programmable current sources, wherein each one of the plurality
of program current sources is used with a corresponding time of flight pixel cell, and comprises:
a first transistor having a gate terminal, a source terminal, and a drain terminal, wherein a current through the first transistor
is responsive to a gate-source voltage of the first transistor;

a current control circuit coupled to the first transistor and coupled to a reference current source, wherein the current control
circuit is coupled to selectively couple a reference current of the reference current source through the first transistor
during a sample operation; and

a sample and hold circuit coupled to the first transistor, wherein the sample and hold circuit is coupled to sample a gate-source
voltage of the first transistor during the sample operation, wherein the sample and hold circuit is coupled to hold the gate-source
voltage during a hold operation after the sample operation substantially equal to the gate-source voltage during the sample
operation, wherein a hold current through the first transistor during the hold operation is substantially equal to the reference
current,

wherein the reference current source is a single reference current source coupled to program each one of the plurality of
current sources during the sample operation of each one of the plurality of programmable current sources.

US Pat. No. 9,671,537

MULTI-LAYER COLOR FILTER FOR LOW COLOR ERROR AND HIGH SNR

OmniVision Technologies, ...

1. A color filter array comprising:
a plurality of tiled minimal repeating units, each minimal repeating unit comprising:
an invisible-wavelength filter layer including a plurality of filters, the plurality of filters in the invisible-wavelength
filter layer including at least three filters having a first invisible photoresponse and a filter having a second invisible
photoresponse; and

a visible-wavelength filter layer positioned on the invisible-wavelength filter layer and having a plurality of filters such
that each filter from the visible-wavelength layer is optically coupled to a corresponding filter in the invisible-wavelength
layer, wherein the plurality of filters in the visible-wavelength filter layer includes a filter having a first visible photoresponse,
a pair of filters having a second visible photoresponse, and a filter having a third visible photoresponse;

wherein the individual filter having the second invisible photoresponse is optically coupled to one of the pair individual
filters with the second visible photoresponse, and

wherein the filters with the first and third visible photoresponses and the other filter of the pair of filters with the second
visible photoresponse are optically coupled to filters with the first invisible photoresponse.

US Pat. No. 9,521,348

READOUT CIRCUITRY FOR IMAGE SENSOR

OmniVision Technologies, ...

1. An imaging system comprising:
an array of image sensor pixels; and
readout circuitry including:
an analog-to-digital converter (“ADC”) coupled to readout analog image signals from a two-dimensional block of pixels in the
array of image sensor pixels;

a block of Static Random-Access Memory (“SRAM”) coupled to receive digital image signals from the ADC, wherein the digital
image signals are representative of the analog image signal readout from the two-dimensional block of pixels; and

a block of Dynamic Random-Access Memory (“DRAM”) coupled to the block of SRAM to receive a portion of the digital image signals,
wherein the block of DRAM is also coupled to receive additional digital image signals from additional blocks of SRAM, and
wherein the block of SRAM is coupled to sequentially output a remaining portion of the digital image signals to additional
DRAM blocks.

US Pat. No. 9,451,137

PCB-MOUNTABLE LENS ADAPTER FOR A PCB-MOUNTABLE CAMERA MODULE

OmniVision Technologies, ...

1. A PCB-mountable lens adapter for a PCB-mountable camera module, comprising:
an adapter lens and an adapter housing for holding the adapter lens coaxially with a camera lens of the PCB-mountable camera
module when both the PCB-mountable camera module and the adapter housing are coupled to a PCB;

an exit pupil of the adapter lens being coplanar with an entrance pupil of the camera lens;
the adapter lens and the camera lens cooperatively forming an imaging system with a field of view exceeding a field of view
of the camera lens alone.

US Pat. No. 9,305,962

DUAL-FACING CAMERA ASSEMBLY

OmniVision Technologies, ...

1. An apparatus comprising:
a first imaging system including a frontside illuminated (FSI) array of imaging pixels included in a first packaged die, wherein
each FSI imaging pixel includes a photodiode region for accumulating an image charge in response to light incident upon a
frontside of the FSI array;

a first metal stack disposed on a first side of the first packaged die and including FSI readout circuitry coupled to the
first imaging system to readout image data from each of the FSI imaging pixels;

a first redistribution layer (RDL) to provide access to the FSI readout circuitry;
a second imaging system including a backside illuminated (BSI) array of imaging pixels disposed within a second packaged die,
wherein each BSI imaging pixel includes a photodiode region for accumulating an image charge in response to light incident
upon a backside of the BSI array;

a second metal stack disposed on the second packaged die and including BSI readout circuitry coupled to the second imaging
system to readout image data from each of the BSI imaging pixels;

a second RDL to provide access to the BSI readout circuitry; and
a printed circuit board (PCB) substrate communicatively coupling the first and second RDLs.

US Pat. No. 9,210,350

LOW POWER IMAGING SYSTEM WITH SINGLE PHOTON AVALANCHE DIODE PHOTON COUNTERS AND GHOST IMAGE REDUCTION

OmniVision Technologies, ...

1. An imaging system, comprising:
a pixel array including a plurality of pixels, wherein each one of the plurality of pixels includes a single photon avalanche
diode (SPAD) coupled to detect photons in response to incident light;

a plurality of photon counters included in readout circuitry, wherein each one of the plurality of photon counters is coupled
to a respective one of the plurality of pixels to count a number of photons detected by said respective one of the plurality
of pixels, wherein each one of the plurality of photon counters is coupled to stop counting photons for said respective one
of the plurality of pixels that reaches a threshold photon count, and wherein each one of the plurality of photon counters
is coupled to continue counting photons for said respective one of the plurality of pixels that does not reach the threshold
photon count;

control circuitry coupled to the pixel array to control operation of the pixel array, the control circuitry including an exposure
time counter coupled to count an exposure time elapsed before each one of the plurality of pixels detects the threshold photon
count, wherein respective exposure time counts and photon counts are combined for each one of the plurality of pixels of the
pixel array.

US Pat. No. 9,998,700

IMAGE SENSOR FAILURE DETECTION

OmniVision Technologies, ...

11. A method for detecting sequencing errors in an image capture device, said method comprising:capturing pixel values corresponding to an image with an array of photosensitive pixels;
storing said pixel values as image data;
overwriting a group of said pixel values with a predetermined value during said step of capturing said pixel values to introduce a predetermined pattern into said image data;
analyzing said image to determine a location of said predetermined pattern within said image data; and
determining whether a sequencing of rows of pixels of said display was correct during said step of capturing said pixel values, based on said location of said predetermined pattern.

US Pat. No. 9,583,527

CONTACT RESISTANCE REDUCTION

OmniVision Technologies, ...

1. An image sensor, comprising:
a plurality of photodiodes disposed in a semiconductor material;
a floating diffusion disposed in the semiconductor material proximate to a photodiode in the plurality of photodiodes;
a transfer gate disposed to transfer image charge generated in the photodiode into the floating diffusion;
a first electrical contact with a first cross sectional area, wherein the first electrical contact is coupled to the transfer
gate;

a second electrical contact with a second cross sectional area, wherein the second electrical contact is coupled to the floating
diffusion, and wherein the second cross sectional area is greater than the first cross sectional area;

a pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor
material; and

a third electrical contact with a third cross sectional area, wherein the third electrical contact is coupled to the first
electrical connection to the semiconductor material, and wherein the third cross sectional area is greater than the first
cross sectional area.

US Pat. No. 9,494,617

IMAGE SENSOR TESTING PROBE CARD

OmniVision Technologies, ...

1. A probe card for use in testing a wafer, comprising:
a printed circuit board (PCB) having a conductor pattern;
a probe head in proximity to the PCB, the probe head defining at least one hole through the probe head, the probe head being
made of an electrically insulating material;

at least one conductive pogo pin disposed respectively in the at least one hole, the pogo pin having a first end electrically
connected to the conductor pattern on the PCB; and

at least one conductive probe pin comprising a cantilever portion and a tip portion, the cantilever portion being electrically
connected and removably adjoined to a second end of the pogo pin and the tip portion being electrically connectable to the
wafer to electrically connect the wafer to the conductor pattern on the PCB, the cantilever portion of the probe pin being
fixedly attached to the probe head,

the at least one hole spanning a top surface of the probe head proximate the PCB and a bottom surface of the probe head opposite
the top surface,

the at least one conductive probe pin being entirely outside the at least one hole,
the second end of the pogo pin and the cantilever portion forming a non-zero angle at an interface therebetween.

US Pat. No. 9,472,587

STORAGE TRANSISTOR WITH OPTICAL ISOLATION

OmniVision Technologies, ...

1. A storage transistor, comprising:
a storage region disposed in a semiconductor material;
a gate electrode disposed in a bottom side of an interlayer proximate to the storage region;
a dielectric layer disposed between the storage region and the gate electrode;
an optical isolation structure disposed in the interlayer, wherein the optical isolation structure extends from a top side
of the interlayer to the gate electrode, and wherein the optical isolation structure is adjoining a perimeter of the gate
electrode and contacts the gate electrode; and

a capping layer disposed proximate to the top side of the interlayer, wherein the capping layer caps a volume encircled by
the optical isolation structure.

US Pat. No. 9,419,044

IMAGE SENSOR PIXEL HAVING STORAGE GATE IMPLANT WITH GRADIENT PROFILE

OmniVision Technologies, ...

1. A pixel cell, comprising:
a storage transistor disposed in a semiconductor substrate, the storage transistor including a storage gate disposed over
the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate
under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate;

a transfer transistor disposed in the semiconductor substrate and coupled between the photodiode and an input of the storage
transistor to selectively transfer the image charge from the photodiode to the storage transistor, the transfer transistor
including a transfer gate disposed over the semiconductor substrate; and

an output transistor disposed in the semiconductor substrate and coupled to an output of the storage transistor to selectively
transfer the image charge from the storage transistor to a read out node, the output transistor including an output gate disposed
over the semiconductor substrate.

US Pat. No. 9,331,118

SENSOR AND METHOD FOR COLOR PHOTOSENSOR ARRAY WITH SHIELDED, DEEP-PENETRATION, PHOTODIODES FOR COLOR DETECTION

OmniVision Technologies, ...

1. A color photosensor comprising:
an opaque masking layer having an opening over a central photodiode;
a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the
central photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching
the first adjacent photodiode;

a second adjacent photodiode, the second adjacent photodiode covered by the masking layer and located adjacent to and sufficiently
near the first adjacent photodiode least at least a portion of the first adjacent photodiode is disposed between the second
adjacent photodiode and the central photodiode, the second adjacent photodiode neither being uncovered by the masking layer
nor being adjacent to a photodiode uncovered by the masking layer and configured such that a majority of photons admitted
through the opening over the central photodiode and reaching the second adjacent photodiode pass through a first adjacent
photodiode before reaching the second adjacent photodiode, the first adjacent photodiode serving as a color filter for the
second adjacent photodiode; and

ancillary circuitry configured for resetting and reading charge on the photodiodes.

US Pat. No. 9,209,320

METHOD OF FABRICATING A SINGLE PHOTON AVALANCHE DIODE IMAGING SENSOR

OmniVision Technologies, ...

1. A method of fabricating an avalanche photodiode pixel, the method comprising:
growing a second doped semiconductor layer on a first doped semiconductor layer having a first doping concentration, wherein
the second doped semiconductor layer is grown with a second doping concentration, and wherein the second doped semiconductor
layer is of an opposite majority charge carrier type as the first doped semiconductor layer;

forming a doped contact region having a third doping concentration in the second doped semiconductor layer, wherein the second
doped semiconductor layer is disposed between the doped contact region and the first doped semiconductor layer, and wherein
the doped contact region is of a same majority charge carrier type as the second doped semiconductor layer, and wherein the
third doping concentration is greater than the second doping concentration; and

forming a guard ring region in the second doped semiconductor layer, wherein the guard ring region is of an opposite majority
charge carrier type as the second doped semiconductor layer, and wherein the guard ring region extends entirely through the
second doped semiconductor layer and surrounds the doped contact region.

US Pat. No. 9,406,718

IMAGE SENSOR PIXEL CELL WITH NON-DESTRUCTIVE READOUT

OmniVision Technologies, ...

1. A pixel cell, comprising:
a photodiode coupled to photogenerate image charge in response to incident light;
a deep trench isolation structure disposed proximate to the photodiode to provide a capacitive coupling to the photodiode
through the deep trench isolation structure, wherein the deep trench isolation structure includes a conductive material, and
an oxide material lining an interior of the deep trench isolation structure;

an amplifier transistor coupled to the deep trench isolation structure to generate amplified image data in response to the
image charge read out from the photodiode through the capacitive coupling provided by the deep trench isolation structure;

a row select transistor coupled to an output of the amplifier transistor to selectively output the amplified image data to
a column bitline coupled to the row select transistor;

a floating diffusion coupled to the amplifier transistor;
a transfer transistor coupled between the photodiode and the floating diffusion to selectively couple the floating diffusion
to the photodiode;

a reset transistor coupled to the floating diffusion to selectively reset charge in the floating diffusion and the photodiode;
and

a switch transistor coupled between the deep trench isolation structure and the floating diffusion, wherein the amplifier
transistor and the reset transistor are selectively coupled to the deep trench isolation structure through the switch transistor.

US Pat. No. 9,347,082

AUTOMATED CELL GROWTH/MIGRATION DETECTION SYSTEM AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. Automated cell growth/migration detection system, comprising:
a container for containing a cell growth/migration matrix/medium into which deposited cells form a cell surface;
an image sensor having a lens and capturing images through the lens;
an image data processor for processing the images to determine cell growth/migration; and
an actuator adapted to, in response to a control signal at least partially determined by output of the image data processor,
incrementally vary distance between the lens and the cell surface such that the images correspond to varying imaging depths.

US Pat. No. 9,307,215

AUTOMATIC WHITE BALANCE METHODS AND SYSTEMS FOR ELECTRONIC CAMERAS

OmniVision Technologies, ...

1. A system for brightness-sensitive automatic white balancing of an electronic color image captured by an electronic camera,
comprising:
a processor; and
a memory including:
a plurality of brightness-specific color-weighting maps each specifying illuminant-specific auto white balance parameters,
a plurality of brightness range definitions respectively indicating applicability range of the plurality of brightness-specific
color-weighting maps, and

machine-readable white balance instructions, encoded in a non-transitory portion of the memory, that, upon execution by the
processor, white balances the electronic color image, the white balance instructions including brightness instructions that,
upon execution by the processor, determine brightness of a scene represented by the electronic color image and select one
of the plurality of brightness-specific color-weighting maps based upon the plurality of brightness range definitions,

each of the plurality of brightness-specific color-weighting maps being a probability distribution of an ordered pair of color
ratios, the ordered pair of color ratios defining the auto white balance parameters, the probability distribution composed
of a plurality of illuminant-specific probability distributions each associated with a different spectral type of illuminant.

US Pat. No. 9,190,434

CMOS IMAGE SENSOR WITH RESET SHIELD LINE

OmniVision Technologies, ...

10. A pixel cell including:
a photodiode;
a floating diffusion node to store charge generated by the photodiode;
a reset transistor to reset a voltage of the floating diffusion node, wherein a coupling portion couples the floating diffusion
node to a first terminal of the reset transistor; and

a shield line extending athwart the coupling portion, the shield line to reduce parasitic capacitance of the reset transistor
to the floating diffusion node;
wherein the reset transistor includes a second terminal to couple the reset transistor to a supply voltage, wherein the shield
line is directly coupled to the second terminal.

US Pat. No. 9,111,832

INFRARED REFLECTION/ABSORPTION LAYER FOR REDUCING GHOST IMAGE OF INFRARED REFLECTION NOISE AND IMAGE SENSOR USING THE SAME

OmniVision Technologies,I...

1. An image sensor, comprising:
a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal
indicative of the IR radiation;

a redistribution layer (RDL) under the photosensing element, the RDL comprising a pattern of conductors for receiving the
electrical signal; and

an IR absorption layer between the photosensing element and the RDL, said IR absorption layer absorbing the IR radiation such
that a substantial portion of the IR radiation does not impinge upon the RDL.

US Pat. No. 9,600,863

METHOD FOR COMBINING IMAGES

OmniVision Technologies, ...

1. A method for combining images, the method comprising:
capturing a first image including a subject from a first camera;
capturing a second image including the subject from a second camera;
applying first pre-processing functions on the first image to produce a first processed image, the first pre-processing functions
including applying a distortion component of a rotation matrix to the first image, wherein the rotation matrix defines a corrected
relationship between the first and the second image;

applying second pre-processing functions on the second image to produce a second processed image, the second pre-processing
functions including applying the rotation matrix to the second image; and

blending, in a processing unit, the first processed image and the second processed image to form a composite image different
from the first and second images captured by the first and second cameras;

wherein the distortion component and the rotation matrix are pre-determined before capturing the first image and the second
image by:

capturing a first calibration image including a calibration subject from the first camera before capturing the first image
and the second image;

capturing a second calibration image including the calibration subject from the second camera before capturing the first image
and the second image;

identifying corresponding pixel sets, each corresponding pixel set including a first pixel in the first calibration image
that corresponds with a second pixel in the second calibration image, wherein the first pixel and the second pixel mark the
same point on the calibration subject; and

determining the distortion component and a rotation component of the rotation matrix by minimizing a distance between the
first pixel in the first calibration image and the second pixel in the second calibration image in each of the corresponding
pixel sets, wherein the distortion component and the rotation component are determined in an iterative loop until the distance
is converged, and wherein the rotation matrix is the product of the distortion component and the rotation component;

wherein the first camera and the second camera have substantially identical image sensors and optics and are positioned at
a known rotation angle, wherein the optics of the first camera and the second camera include a wide-angle lens, and wherein
the distortion component corrects for the wide-angle lens; and

wherein during calibration the rotation component is kept fixed while an optimized distortion component is determined and
the optimized distortion component is kept fixed and used to determine an optimized rotation component.

US Pat. No. 9,462,179

IMAGE SENSOR WITH FAST INTRA-FRAME FOCUS

OmniVision Technologies, ...

1. A method of focusing an image system, the method comprising:
scanning a first portion of an image frame from an image sensor a first time at a first rate to produce first focus data;
scanning a second portion of the image frame from the image sensor at a second rate to read image data from the second portion;
scanning the first portion of the image frame a second time at the first rate to produce second focus data, wherein the first
rate is N times greater than the second rate, wherein N is greater than or equal to two, and wherein the first portion is
scanned M times for each time the second portion is scanned during a focus operation, wherein M is not equal to N;

comparing the first focus data and the second focus data; and
adjusting a focus of a lens in response to the comparison of the first focus data and the second focus data;
wherein focusing the image system is accomplished within the image frame only.

US Pat. No. 9,293,505

SYSTEM AND METHOD FOR BLACK COATING OF CAMERA CUBES AT WAFER LEVEL

OmniVision Technologies, ...

1. A method for black coating camera cubes at wafer level, the method comprising:
stretching a first tape attached to a wafer of camera cubes to increase a gap between individual camera cubes;
applying a layer of black coating material to the wafer of the camera cubes;
laser trimming a pattern within the layer of black coating, the pattern defining undesired portions of the black coating material
to be removed;

lifting off the undesired portions of the black coating material from the wafer prior to singulating each individual camera
cube from the wafer;

coating the camera cubes with a masking portion corresponding to portions of the camera cubes where black coating is not desired;
wherein the step of lifting off comprises applying a stripping chemical to remove the masking portion via the laser trimmed
pattern.

US Pat. No. 9,213,438

OPTICAL TOUCHPAD FOR TOUCH AND GESTURE RECOGNITION

OmniVision Technologies, ...

1. An optical touchpad comprising:
a prism having a four-sided cross section including a light entry interface, a light exit interface, a touch interface and
a back interface substantially parallel to and spaced apart from the touch interface;

a source of collimated light, wherein the collimated light enters the prism through the light entry interface, is reflected
from the touch interface by total internal reflection, and exits the prism through the light exit interface, and wherein the
source of collimated light emits light in a first wavelength range;

a first image sensor for detecting the collimated light exiting from the light exit interface;
a lens for forming an image of a hand positioned above the touch interface through the touch interface and the back interface,
wherein the hand forms a gesture but does not touch the touch interface, wherein the hand is illuminated by an imaging light
source different than the source of collimated light, and wherein the imaging light source emits light in a second wavelength
range;

a second image sensor comprising a two-dimensional array of light-sensitive elements and optically coupled to the lens wherein
the second image sensor can capture a two-dimensional image of the hand; and

a processor coupled to the second image sensor, wherein the processor can read the two-dimensional image of the hand and process
the two-dimensional image to identify the gesture;

a first filter disposed between the light exit interface and the first image sensor, wherein the first filter passes the first
wavelength range; and

a second filter disposed between the prism and the second image sensor, wherein the second filter passes the second wavelength
range.

US Pat. No. 9,054,007

IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE

OmniVision Technologies, ...

1. A pixel cell, comprising:
a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge;
a floating diffusion disposed in a well region disposed in the epitaxial layer in the first region of the semiconductor material;
a transfer transistor disposed in the first region of the semiconductor material and coupled between the photodiode and the
floating diffusion to selectively transfer the image charge from the photodiode to the floating diffusion;

a deep trench isolation (DTI) structure disposed in the semiconductor material, wherein the DTI structure isolates the first
region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on
an other side of the DTI structure, wherein the DTI structure includes:

a dielectric layer lining an inside surface of the DTI structure; and
doped semiconductor material disposed over the dielectric layer inside the DTI structure, wherein the doped semiconductor
material disposed inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor
selectively transferring the image charge from the photodiode to the floating diffusion.

US Pat. No. 9,438,794

METHOD AND APPARATUS FOR DISTRIBUTED IMAGE PROCESSING IN CAMERAS FOR MINIMIZING ARTIFACTS IN STITCHED IMAGES

Omnivision Technologies, ...

1. A method for coordinated adjustment of images captured by a first and a second camera, the images suitable for stitching
on a host, comprising:
capturing a first image in the first camera and a second image in the second camera;
determining a first set of image processing parameters from the first image;
determining a second set of image processing parameters from the second image;
determining whether the first camera is able to communicate with the host;
determining a master, the master comprising the host if the first camera is able to communicate with the host, and the master
comprising the second camera if the first camera is unable to communicate with the host;

transmitting the first set of image processing parameters to the master;
determining a set of composite image processing parameters from at least the first and second sets of image processing parameters,
the composite image processing parameters being derived from both the first and second sets of image processing parameters,
and the composite image processing different from both the first and second sets of image processing parameters unless the
first and second sets are identical;

transmitting the set of combined image processing parameters to the first camera;
using a processor of the first camera to apply the composite image processing parameters to the first image to form a first
preprocessed image; and

using a processor of the second camera to apply the composite image processing parameters to the second image to form a second
preprocessed image.

US Pat. No. 9,305,968

DIE SEAL RING FOR INTEGRATED CIRCUIT SYSTEM WITH STACKED DEVICE WAFERS

OmniVision Technologies, ...

1. A method of fabricating an integrated circuit system, the method comprising:
providing a first die including:
a first device formed in an integrated circuit region of a first semiconductor layer, and
a first metal stack formed on the first semiconductor layer, the first metal stack including one or more metal layers formed
in a dielectric layer;

providing a second die including:
a second device formed in an integrated circuit region of a second semiconductor layer, and
a second metal stack formed on the second semiconductor layer, the second metal stack including one or more metal layers formed
in a dielectric layer;

bonding a front side of the first die to a front side of the second die by bonding the first metal stack to the second metal
stack along a bonding interface between the dielectric layer of the first metal stack and the dielectric layer of the second
metal stack; and

forming a two-part seal ring in the stacked die, wherein forming the two-part seal ring comprises:
forming a first seal ring in an edge region of the first die, wherein the first seal ring is formed in the first metal stack,
surrounds the integrated circuit region of the first die, and includes at least one via coupled to at least one metal layer
of the first metal stack, and

forming a second seal ring in an edge region of the second die, wherein the second seal ring surrounds the integrated circuit
region of the second die, and wherein the second seal ring includes a conductive path that extends from a backside of the
second die through the second semiconductor layer, the second metal stack, and the bonding interface to the first seal ring,
wherein the conductive path is electrically coupled to at least one metal layer of the second metal stack and is electrically
coupled to at least one via of the first seal ring or at least one metal layer of the first metal stack.

US Pat. No. 9,165,969

APPARATUS HAVING THINNER INTERCONNECT LINE FOR PHOTODETECTOR ARRAY AND THICKER INTERCONNECT LINE FOR PERIPHERY REGION

OmniVision Technologies, ...

1. An apparatus comprising:
a photodetector array;
a peripheral region at a periphery of the photodetector array, wherein the peripheral region is disposed around the photodetector
array;

a thinner interconnect line formed in the photodetector array disposed within one or more insulating layers;
a thicker interconnect line formed in the peripheral region disposed within the one or more insulating layers;
a taller via disposed below and coupled to the thinner interconnect line; and
a shorter via disposed below and coupled to the thicker interconnect line, wherein the thicker interconnect line is thicker
than the thinner interconnect line by a distance d, a depth of the taller via being equivalent to a sum of a depth of the
shorter via and the distance d, and wherein the longer via is coupled to the photodetector array and the shorter via is coupled
to a peripheral circuit within the peripheral region, the peripheral circuit and the photodetector array disposed at a same
level within a substrate,

wherein a top of the thinner interconnect line and a top of the thicker interconnect line are at a common interconnect level.

US Pat. No. 9,570,507

ENTRENCHED TRANSFER GATE

OmniVision Technologies, ...

1. An image sensor pixel, comprising:
a semiconductor layer;
a photosensitive region having a second polarity disposed within the semiconductor layer to accumulate photo-generated charge;
a floating node disposed within the semiconductor layer;
a trench extending into the semiconductor layer between the photosensitive region and the floating node;
an entrenched transfer gate disposed within the trench to control transfer of the photo-generated charge from the photosensitive
region to the floating node;

a well of a first polarity disposed within the semiconductor layer adjacent to the trench, wherein the floating node has the
second polarity opposite the first polarity and is at least partially disposed within the well;

a deep doped region of the second polarity disposed within the semiconductor layer below the photosensitive region and adjacent
to the photosensitive region,

wherein the well of the first polarity and the deep doped region of the second polarity interface forming a P-N junction,
the well does not extend under the photosensitive region; and

a punch-through stopper region of the first polarity disposed below the trench and extending entirely along the bottom of
the trench and wrapping around both sides of the bottom of the trench such that the punch-through stopper region interfaces
with the photosensitive region, the deep doped region, and the well.

US Pat. No. 9,455,291

BLUE ENHANCED IMAGE SENSOR

OmniVision Technologies, ...

1. A back side illuminated image sensor comprising:
a semiconductor material having a front side and a back side;
image sensor circuitry and a light filter array, wherein the semiconductor material is disposed between the image sensor circuitry
and the light filter array, and wherein the image sensor circuitry is disposed on the front side of the semiconductor material
and the light filter array is disposed proximate to the back side of the semiconductor material;

a first pixel including:
a first doped region disposed in the semiconductor material, wherein the first doped region extends from the image sensor
circuitry into the semiconductor material a first depth; and

a second doped region disposed in the semiconductor material, wherein the second doped region is disposed between the back
side of the semiconductor material and the first doped region, and wherein the second doped region is electrically isolated
from the first doped region; and

a second pixel including a third doped region disposed in the semiconductor material, wherein the third doped region extends
from the image sensor circuitry into the semiconductor material a second depth;

a plurality of the first doped region, the second doped region, and the third doped region;
a first light filter in the light filter array which permits the passage of blue light and red light and is optically aligned
with at least one of the second doped regions in the plurality of second doped regions;

a second light filter in the light filter array which permits the passage of blue light and green light and excludes red light
and is optically aligned with at least another one of the second doped regions in the plurality of second doped regions; and

a third light filter in the light filter array which permits the passage of blue light and is optically aligned with at least
one of the third doped regions in the plurality of third doped regions.

US Pat. No. 9,402,039

DUAL CONVERSION GAIN HIGH DYNAMIC RANGE SENSOR

OmniVision Technologies, ...

1. A method of acquiring image data from a pixel from a single exposure of a single image capture in a high dynamic range
(HDR) image sensor, comprising:
resetting a photodetector of the pixel;
integrating light incident on the photodetector for the single exposure of the single image capture;
performing a first reset of a floating diffusion of the pixel;
setting the floating diffusion to low conversion gain;
sampling a low conversion gain reset signal from the floating diffusion;
performing a second reset of the floating diffusion of the pixel after the sampling of the reset signal from the floating
diffusion at the low conversion gain, and prior to a sampling of the reset signal from the floating diffusion at a high conversion
gain;

setting the floating diffusion to the high conversion gain;
sampling a high conversion gain reset signal from the floating diffusion;
transferring charge carriers photogenerated during the single exposure from the photodetector to the floating diffusion;
sampling a high conversion gain image signal from the floating diffusion;
setting the floating diffusion to the low conversion gain;
transferring additional charge carriers photogenerated during the single exposure from the photodetector to the floating diffusion;
and

sampling a low conversion gain image signal from the floating diffusion.

US Pat. No. 9,331,115

IMAGE SENSOR HAVING A GAPLESS MICROLENSES

OmniVision Technologies, ...

1. An image sensor, comprising:
a plurality of photosensitive devices arranged in a semiconductor substrate;
a planar layer disposed over the plurality of photosensitive devices in the semiconductor substrate;
a plurality of first microlenses comprised of a lens material and arranged in first lens regions on the planar layer;
a plurality of lens barriers comprised of the lens material and arranged on the planar layer to provide boundaries that define
second lens regions on the planar layer; and

a plurality of second microlenses comprised of the lens material and formed within the boundaries provided by the plurality
of lens barriers that define the second lens regions on the planar layer, wherein the plurality of lens barriers are integrated
within respective second microlenses after a reflow process of the plurality of second microlenses, wherein the second microlenses
comprise green second lens regions, red second lens regions, and blue second lens regions.

US Pat. No. 9,319,613

IMAGE SENSOR HAVING NMOS SOURCE FOLLOWER WITH P-TYPE DOPING IN POLYSILICON GATE

OmniVision Technologies, ...

1. An image sensor array comprising
a tiling unit comprising a source-follower stage coupled to buffer a signal from a photodiode when read onto a sense line,
wherein the source-follower stage comprises a source-follower transistor having source and drain doped as opposite doping
type from a polysilicon gate of the same transistor, while at least a second transistor of the tiling unit has a transistor
with source, drain, and polysilicon gate all doped with the same doping type; the source-follower transistor having greater
threshold voltage than the second transistor.

US Pat. No. 9,653,511

CMOS IMAGE SENSOR WITH PENINSULAR GROUND CONTRACTS AND METHOD OF MANUFACTURING THE SAME

OmniVision Technologies, ...

1. A complementary metal oxide semiconductor (CMOS) image sensor with peninsular ground contacts, comprising:
a substrate having a plurality of pixel units arranged in rows of pixel units;
a plurality of ground contacts for grounding the pixel units, the ground contacts being formed in respective peninsular regions
of the substrate within respective ones of the pixel units, each of the peninsular regions being only partly enclosed by a
shallow trench isolation and being located at top of a trench associated with the shallow trench isolation, the peninsular
regions having alternating orientation along each of the rows of pixel units.

US Pat. No. 9,571,763

SPLIT PIXEL HIGH DYNAMIC RANGE SENSOR

OmniVision Technologies, ...

1. A method of acquiring image data from a pixel from a single exposure of a single image capture in a high dynamic range
(HDR) image sensor, comprising:
photogenerating charge carriers during a single integration time in photodetectors of each one of a plurality of sub-pixels
included in the pixel, wherein each one of the plurality of sub-pixels of the pixel has a same color filter;

resetting a shared floating diffusion of the pixel;
sampling the shared floating diffusion to generate a reset output sample signal;
transferring charge carriers that were photogenerated in a first portion of the plurality of sub-pixels to the shared floating
diffusion;

sampling the shared floating diffusion to generate a first output sample signal;
transferring charge carriers that were photogenerated in a second portion of the plurality of sub-pixels to the shared floating
diffusion, wherein said transferring the charge carriers that were generated in the first portion and said transferring the
charge carriers that were generated in the second portion occur at different times; and

sampling the shared floating diffusion to generate a second output sample signal.

US Pat. No. 9,570,491

DUAL-MODE IMAGE SENSOR WITH A SIGNAL-SEPARATING COLOR FILTER ARRAY, AND METHOD FOR SAME

OmniVision Technologies, ...

1. A dual-mode image sensor with a signal-separating color filter array comprising:
a substrate including a plurality of photodiode regions;
a plurality of tall spectral filters having a uniform first height and for transmitting a first electromagnetic wavelength
range, each of the plurality of tall spectral filters disposed on the substrate and aligned with a respective one of the plurality
of photodiode regions;

a plurality of short spectral filters for transmitting one or more spectral bands within a second electromagnetic wavelength
range, each of the plurality of short spectral filters disposed on the substrate and aligned with a respective one of the
plurality of photodiode regions; and

a plurality of single-layer blocking filters for blocking the first electromagnetic wavelength range, each of the plurality
of single-layer blocking filters (i) having a minimum thickness exceeding 0.5 ?m and (ii) being disposed on a respective one
of the plurality of short spectral filters, each single-layer blocking filter and its respective short spectral filter having
combined height substantially equal to the first height.

US Pat. No. 9,526,417

PROJECTOR FOR ADAPTOR-LESS SMARTPHONE EYE IMAGING AND ASSOCIATED METHODS

OmniVision Technologies, ...

1. A projector for adaptor-less smartphone eye imaging, comprising:
at least two line generators for projecting a light pattern onto a face of a subject; and
a structure for positioning the line generators relative to a camera of the smartphone;
wherein the light pattern is configured to facilitate positioning of the smartphone relative to the subject's eye such that
an image of the eye captured by the camera is optimal for evaluation.

US Pat. No. 9,523,765

PIXEL-LEVEL OVERSAMPLING FOR A TIME OF FLIGHT 3D IMAGE SENSOR WITH DUAL RANGE MEASUREMENTS

OmniVision Technologies, ...

1. A time of flight pixel cell, comprising:
a photosensor to sense photons reflected from an object; and
pixel support circuitry including:
charging control logic coupled to the photosensor to detect when the photosensor senses the photons reflected from the object,
wherein the charging control logic is further coupled to receive timing signals representative of when light pulses are emitted
from a light source to the object;

a controllable current source coupled to provide a charge current in response to a time of flight signal coupled to be received
from the charging control logic, wherein the time of flight signal is representative of a time of flight of each one of the
light pulses emitted from the light source until the photosensor senses a respective one of the photons reflected from the
object;

a capacitor coupled to receive the charge current from the controllable current source in response to the time of flight signal,
wherein a voltage on the capacitor is representative of a round trip distance to the object; and

a reset circuit coupled to reset the voltage on the capacitor after being charged a plurality number of times by the controllable
current source in response to the time of flight signal.

US Pat. No. 9,496,304

IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE

OmniVision Technologies, ...

1. A pixel cell, comprising:
a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge;
a floating diffusion disposed in a well region disposed in the epitaxial layer in the first region of the semiconductor material;
a transfer transistor disposed in the first region of the semiconductor material and coupled between the photodiode and the
floating diffusion to selectively transfer the image charge from the photodiode to the floating diffusion; and

a deep trench isolation (DTI) structure disposed in the semiconductor material, wherein the DTI structure isolates the first
region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on
an other side of the DTI structure, wherein the DTI structure includes a doped semiconductor material disposed inside the
DTI structure, wherein the doped semiconductor material disposed inside the DTI structure is selectively coupled to a readout
pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the
floating diffusion.

US Pat. No. 9,490,282

PHOTOSENSITIVE CAPACITOR PIXEL FOR IMAGE SENSOR

OmniVision Technologies, ...

1. An image sensor pixel comprising:
a photosensitive capacitor comprising:
an electrode extended along an axis;
a conductive layer disposed around the electrode, wherein the conductive layer is wrapped coaxially around the electrode;
a dielectric layer formed between the conductive layer and the electrode such that the conductive layer does not contact the
electrode; and

a photosensitive semiconductor material for generating an image signal in response to image light, wherein the photosensitive
semiconductor material is disposed between the dielectric layer and the electrode; and

a transistor network coupled to readout the image signal from the electrode of the photosensitive capacitor.

US Pat. No. 9,491,386

FLOATING DIFFUSION RESET LEVEL BOOST IN PIXEL CELL

OmniVision Technologies, ...

8. A pixel cell, comprising:
a photodiode coupled to photogenerate charge in response to incident light during an integration period;
a transfer transistor coupled to the photodiode to transfer the charge from the photodiode;
a floating diffusion coupled to the transfer transistor to receive the charge transferred from the photodiode;
a reset transistor coupled between a reset voltage and the floating diffusion to reset the charge in the floating diffusion
to a first reset level during a floating diffusion reset operation;

an amplifier transistor having an input terminal coupled to the floating diffusion to generate an amplified signal at an output
terminal of the amplifier transistor in response to the charge in the floating diffusion, wherein the amplifier transistor
includes an amplifier capacitance coupled between the input terminal and the output terminal of the amplifier transistor;
and

a select transistor coupled between the output terminal of the amplifier transistor and an output bitline of the pixel cell,
wherein the select transistor is coupled to be switched from OFF to ON to initially discharge the output terminal of the amplifier
transistor through the select transistor during the floating diffusion reset operation before the reset transistor is coupled
to be switched OFF to boost a reset level of the floating diffusion through the amplifier capacitance from the first reset
level to a second reset level.

US Pat. No. 9,478,576

SEALED-SIDEWALL DEVICE DIE, AND MANUFACTURING METHOD THEREOF

OmniVision Technologies, ...

1. A method for fabricating a sealed-sidewall device die comprising filling grooves of a deeply-grooved device wafer with
a sealant, each groove at least partially penetrating each layer of the device wafer, yielding a sealed grooved device wafer.

US Pat. No. 9,478,579

STACKED CHIP IMAGE SENSOR WITH LIGHT-SENSITIVE CIRCUIT ELEMENTS ON THE BOTTOM CHIP

OmniVision Technologies, ...

1. An imaging sensor system, comprising:
a first semiconductor layer of a first wafer;
a complementary metal oxide semiconductor (CMOS) imaging array formed in the first semiconductor layer, wherein the CMOS imaging
array includes an N number of pixels, each pixel including a photodiode region formed in a front side of the first semiconductor
layer, and wherein the photodiode region is configured to received light from a backside of the first semiconductor layer;

a first metal stack disposed on the front side of the first semiconductor layer;
a second semiconductor layer of a second wafer;
a second metal stack disposed on the second semiconductor layer, wherein the first wafer is bonded to the second wafer at
a bonding interface between the first metal stack and the second metal stack; and

a storage device formed directly below the CMOS imaging array in the second semiconductor layer and electrically coupled to
the CMOS imaging array by way of the first and second metal stacks, wherein the storage device includes at least N number
of storage cells, wherein each of the N number of storage cells are configured to store a signal representative of image charge
accumulated by a respective photodiode region and wherein each of the N number of storage cells includes a light-sensitive
circuit element that is sensitive to light-induced leakage;

wherein the CMOS imaging array, the first metal stack, and the second metal stack are configured to prevent substantially
all light from reaching the light-sensitive circuit elements.

US Pat. No. 9,443,899

BSI CMOS IMAGE SENSOR WITH IMPROVED PHASE DETECTING PIXEL

OmniVision Technologies, ...

1. A back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor having an array of pixels that
include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid,
and a photodiode implant corresponding to the PDP, the BSI CMOS image sensor comprising:
a PDP mask fabricated concurrently with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at
least part of the photodiode implant;

wherein the PDP mask is fabricated of the same material as the DTI structure and is positioned between the composite grid
and the photodiode implant.

US Pat. No. 9,305,949

BIG-SMALL PIXEL SCHEME FOR IMAGE SENSORS

OmniVision Technologies, ...

1. An image sensor pixel for use in a high dynamic range image sensor, the image sensor pixel comprising:
a first photodiode disposed in a semiconductor material, wherein the first photodiode has a first light exposure area and
a first doping concentration;

a plurality of photodiodes disposed in the semiconductor material, wherein each photodiode in the plurality of photodiodes
has the first light exposure area and the first doping concentration;

a shared floating diffusion region;
a first transfer gate coupled to transfer first image charge from the first photodiode to the shared floating diffusion region
in response to a first transfer signal; and

a second transfer gate coupled to simultaneously transfer distributed image charge from each photodiode in the plurality of
photodiodes to the shared floating diffusion region in response to a common transfer signal that is distinct from the first
transfer signal.

US Pat. No. 9,307,214

AUTOMATIC WHITE BALANCE METHODS AND SYSTEMS FOR ELECTRONIC CAMERAS

OmniVision Technologies, ...

1. A brightness-sensitive automatic white balance method, comprising:
determining brightness of a scene captured in an electronic color image, the step of determining brightness comprising calculating
a brightness metric for the electronic color image;

selecting a color-weighting map based upon the brightness of the scene, the step of selecting comprising selecting the color-weighting
map from a plurality of brightness-specific color-weighting maps respectively associated with different ranges of the brightness
metric;

extracting auto white balance parameters from the color-weighting map; and
correcting color of the electronic color image, according to the auto white balance parameters, to generate a white balanced
image;

the plurality of brightness-specific color-weighting maps including:
a low-brightness color-weighting map associated with the brightness metric being less than a first threshold,
a moderate-brightness color-weighting map associated with the brightness metric being between the first threshold and a second
threshold that is greater than the first threshold, and

a high-brightness color-weighting map associated with the brightness metric being greater than the second threshold.

US Pat. No. 9,088,750

APPARATUS AND METHOD FOR GENERATING PICTURE-IN-PICTURE (PIP) IMAGE

OmniVision Technologies, ...

1. A picture-in-picture (PIP) system, comprising:
a first image sensor device for detecting light from a first subject and generating a first signal indicative of a first image
of the first subject;

a second image sensor device for detecting light from a second subject and generating a second signal indicative of a second
image of the second subject;

the first signal comprises a first video image data stream, and the second signal comprises a second video image data stream;
the first image sensor device generates a synchronization signal different from the first signal, the second video image data
stream being triggered in response to the synchronization signal;

and overlay logic for combining the first and second signals to generate a picture-in-picture signal indicative of a combination
of the first image of the first subject and the second image of the second subject, wherein the overlay logic is located within
the first image sensor device.

US Pat. No. 9,608,027

STACKED EMBEDDED SPAD IMAGE SENSOR FOR ATTACHED 3D INFORMATION

OmniVision Technologies, ...

1. A pixel array, comprising:
a plurality of visible light pixels arranged in the pixel array, wherein each one of the plurality of visible light pixels
includes a photosensitive element arranged in a first semiconductor die to detect visible light, wherein the plurality of
visible light pixels is arranged in the pixel array having color filters arranged in a Bayer pattern having a repeating pattern
of a red color filter, a first green color filter, a second green color filter, and a blue color filter to provide color image
data, wherein each one of the plurality of visible light pixels is coupled to provide the color image data to visible light
readout circuitry disposed in a second semiconductor die stacked with and coupled to the first semiconductor die in a stacked
chip scheme; and

a plurality of infrared (IR) pixels arranged in the pixel array, wherein each one of the plurality of IR pixels includes a
single photon avalanche photodiode (SPAD) arranged in the first semiconductor die to detect IR light, wherein each one of
the plurality of IR light pixels is coupled to provide IR image data to IR light readout circuitry disposed in the second
semiconductor die, wherein each one of the plurality of IR pixels is surrounded on all lateral sides in the first semiconductor
die by the plurality of visible light pixels, wherein the plurality of IR pixels is distributed throughout the pixel array
among the plurality of visible light pixels in the first semiconductor die.

US Pat. No. 9,565,405

IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY

OmniVision Technologies, ...

1. A back side illuminated image sensor, comprising:
a pixel array including a semiconductor material having a front side and a back side;
image sensor circuitry disposed on the front side of the semiconductor material to control operation of the pixel array and
to readout image charge from the pixel array;

a first pixel in the pixel array including a first doped region, wherein the first doped region is disposed in the semiconductor
material proximate to the back side and extends into the semiconductor material a first depth to reach the image sensor circuitry;
and

a second pixel in the pixel array including:
a second doped region, wherein the second doped region is disposed proximate to the back side of the semiconductor material
and extends into the semiconductor material a second depth which is less than the first depth; and

a third doped region, wherein the third doped region is disposed between the second doped region and the image sensor circuitry
on the front side of the semiconductor material, and wherein the third doped region is electrically isolated from the first
doped region and the second doped region; and

wherein the first pixel and the second pixel are arranged in a 2-by-2 array, and wherein the 2-by-2 array includes two of
the first pixel and two of the second pixel.

US Pat. No. 9,471,994

IMAGE BASED SYSTEMS FOR DETECTING INFORMATION ON MOVING OBJECTS

OmniVision Technologies, ...

1. A system for generating image data of an object moving through a scene at a known object velocity, comprising:
a first imaging system that generates sequential image data samples of the scene;
a post processing system configured to analyze the sequential image data samples to determine when the object is present in
the scene; and

one or more second imaging systems configured, when triggered by the post processing system, to generate one or more second
image data samples of the object when the object is present, the one or more second imaging systems each including

a sensor array for generating the one or more second image data samples, and
an adjustable shutter rate and an adjustable shutter direction such that the one or more second image data samples include
complete image data of the object in a single sampling of the sensor array;

the post processing system being further configured to utilize information of (a) a first time at which the object is determined
to be in the scene, and (b) the object velocity, to calculate a second time at which to trigger the one or more second imaging
systems, so that the one or more second image data samples are generated when the object is within a field of view of the
one or more second imaging systems.

US Pat. No. 9,131,284

VIDEO-IN-VIDEO VIDEO STREAM HAVING A THREE LAYER VIDEO SCENE

OmniVision Technologies, ...

1. A mobile computing device, comprising:
a first camera on a first side of the mobile computing device, wherein the first camera is coupled to produce a first camera
video stream;

a second camera on a second side of the mobile computing device, wherein the second camera is coupled to produce a second
camera video stream;

a third camera on the second side of the mobile computing device, wherein the third camera is coupled to produce a third camera
video stream, wherein the second camera and the third camera are included in a stereo camera of the mobile computing device;
and

a video processor coupled to generate an output video stream including a first video layer generated from the first camera
video stream, wherein the video processor is further coupled to generate the output video stream having a second video layer
and a third video layer generated from the second camera video stream in response to the second camera video stream and the
third camera video stream, wherein the video processor is coupled to overlay the first video layer between the second video
layer and the third video layer in the output video stream.

US Pat. No. 9,083,899

CIRCUIT STRUCTURE FOR PROVIDING CONVERSION GAIN OF A PIXEL ARRAY

OmniVision Technologies, ...

1. A pixel array comprising:
a pixel cell including a source follower transistor and a row select transistor;
a first trace coupled to the source follower transistor;
a second trace to receive from the row select transistor an output of the pixel cell;
switch circuitry including:
a first transistor coupled to a supply voltage and the source follow transistor, wherein the first transistor is coupled to
the source follower transistor via a first portion of the first trace;

a second transistor coupled to a sample and hold circuit and the source follow transistor, wherein the second transistor is
coupled to the source follower transistor via a second portion of the first trace;

a third transistor coupled to the supply voltage and the row select transistor, wherein the third transistor is coupled to
the row select transistor via a first portion of the second trace; and

a fourth transistor coupled to the sample and hold circuit and the row select transistor, wherein the fourth transistor is
coupled to the row select transistor via a second portion of the second trace;
the switch circuitry to transition between a first operational mode and a second operational mode based on a control signal,
the first operational mode including the first transistor and the fourth transistor each being in a respective active state
and the second transistor and the third transistor each being in a respective inactive state, the second operational mode
including the first transistor and the fourth transistor each being in a respective inactive state and the second transistor
and the third transistor each being in a respective active state.

US Pat. No. 10,108,053

LIQUID CRYSTAL DISPLAY DEVICE WITH PERIPHERAL ELECTRODE

OmniVision Technologies, ...

1. A liquid crystal display device comprising:a first substrate;
a pixel array formed on said first substrate;
a transparent substrate disposed a spaced distance over said pixel array;
a liquid crystal layer disposed between said pixel array and said transparent substrate;
a transparent electrode disposed between said transparent substrate and said liquid crystal layer, said transparent electrode being formed from a thin, conductive material, said transparent electrode having a first edge extending in a first direction and a second edge extending in a second direction, said first edge being longer than said second edge;
an input electrode extending along and electrically coupled along said first edge of said transparent electrode, said input electrode having lower impedance than a portion of said transparent electrode overlying said pixel array; and
a liquid crystal alignment layer formed directly on said transparent electrode; and
wherein said input electrode is disposed between said transparent electrode and said liquid crystal alignment layer.

US Pat. No. 10,075,636

ULTRA-SMALL CAMERA MODULE WITH WIDE FIELD OF VIEW, AND ASSOCIATE LENS SYSTEMS AND METHODS

OmniVision Technologies, ...

1. An ultra-small camera module with wide field of view, comprising:a wafer-level lens system for forming, on an image plane, an image of a wide field-of-view scene, the wafer-level lens system including
(a) a distal planar surface positioned closest to the scene and no more than 2.5 millimeters away from the image plane in direction along optical axis of the wafer-level lens system, and
(b) a plurality of lens elements optically coupled in series along the optical axis, each of the lens elements having a curved surface; and
an image sensor mechanically coupled to the wafer-level lens system and including a rectangular array of photosensitive pixels, positioned at the image plane, for capturing the image;
wherein cross section of the ultra-small camera module, orthogonal to the optical axis, is rectangular with side lengths no greater than 1.5 millimeters; and
wherein the plurality of lens elements comprise:
a one-sided wafer-level lens including:
(i) a first substrate implementing the distal planar surface, and
(ii) a first lens element disposed on side of the first substrate facing the image sensor, and
a two-sided wafer-level lens disposed between the one-sided wafer-level lens and the image sensor and including:
(i) a second substrate,
(ii) a second lens element disposed on side of the second substrate facing the one-sided wafer-level lens, and
(iii) a third lens element disposed on side of the second substrate facing the image sensor.

US Pat. No. 9,921,393

WAFER-LEVEL METHODS FOR MAKING APERTURED LENSES INVOLVING SEQUENTIAL LAYERING OF BIPLANAR TRANSPARENT FILM, OPAQUE LAYER, SPACER WAFER, AND LENS WAFER

OmniVision Technologies, ...

1. A wafer-level method for making apertured lenses, comprising:
applying an anti-stick coating to a planar surface of a first substrate;
applying a biplanar transparent film to the anti-stick coating, the biplanar transparent film having a bottom planar surface
proximate the anti-stick coating and a top planar surface opposite the bottom planar surface; and

depositing an opaque layer, having an aperture therethrough, on the top planar surface such that the opaque layer and the
anti-stick coating are on opposite sides of the biplanar transparent film;

adhering a first spacer wafer to the opaque layer and adhering a first lens wafer to the first spacer wafer such that (a)
the aperture is aligned with a first lens of the first lens wafer and (b) where the first spacer wafer is between the first
lens wafer and the biplanar transparent film, a minimum distance between the first lens wafer and the biplanar transparent
film exceeds a thickness of the first spacer wafer;

removing the first substrate and the anti-stick coating from the bottom planar surface;
adhering a second spacer wafer to the bottom planar surface and adhering a second lens wafer to the second spacer wafer such
that (a) the aperture is aligned with a second lens of the second lens wafer, and (b) the second spacer wafer is between the
bottom planar surface and the second lens wafer.

US Pat. No. 10,121,820

PROTECTIVE CAPS FOR SMALL IMAGE SENSOR MASKING AND MOUNTING PROCESS

OmniVision Technologies, ...

1. A method of processing an image sensor system, comprising steps of:(a) placing a first cover member on top of an image sensor;
(b) coating the image sensor and the first cover member with a dark coating agent;
(c) removing the first cover member from the image sensor;
(d) placing a second cover member on top of the image sensor;
(e) affixing the image sensor on to a permanent mount to form an electrical coupling between the image sensor and the permanent mount;
(f) removing the second cover member from the image sensor;wherein the first cover member completely covers a top portion of the image sensor; andwherein the second cover member includes an internal rib configured to form a contact seal with the image sensor.