US Pat. No. 9,325,066

COMMUNICATION DEVICE AND METHOD FOR DESIGNING ANTENNA ELEMENT THEREOF

INDUSTRIAL TECHNOLOGY RES...

1. A communication device, comprising:
a ground plane, embedded with a notch at an edge thereof, having at least a first edge and a second edge at the notch; and
an antenna element, disposed at the notch, having at least a first operating frequency band and a second operating frequency
band higher than the first operating frequency band, the antenna element comprising:

a first conductive portion, having a starting terminal as a feeding terminal of the antenna element, wherein the feeding terminal
is electrically coupled to the first edge of the notch via a signal source, and a capacitive coupling portion is formed between
an end terminal of the first conductive portion and the second edge of the ground plane; and

a second conductive portion, having a shorting terminal, electrically coupled or connected to the second edge of the notch,
wherein the first and second edges of the notch are located on different sides and the first edge has a length greater than
a length of the second edge,

wherein the shorting terminal and the feeding terminal are respectively located near two end points of a diagonal line of
the notch, and the first conductive portion extends along the first edge to the second edge, and the capacitive coupling portion
makes the first conductive portion and the first edge of the ground plane forming an equivalent loop resonant structure,

wherein the equivalent loop resonant structure forms an excitation source of the second conductive portion, and the excitation
source excites the second conductive portion for resonance to generate the first and second operating frequency bands of the
antenna element, and the excitation source formed by the equivalent loop resonant structure utilizes the first edge, the second
edge or another edge of the notch as a part of current resonant paths of the second conductive portion,

wherein the second conductive portion has a length smaller than one-fifth wavelength of a lowest operating frequency of a
lowest communication system band covered by the first operating frequency band.

US Pat. No. 9,077,077

MOBILE COMMUNICATION DEVICE AND ANTENNA DEVICE

MEDIATEK SINGAPORE PTE. L...

1. A mobile communication device, comprising:
a system circuit board, comprising a system ground plane; and
an antenna, comprising:
an antenna substrate, substantially parallel to the system ground plane;
a first radiation element, disposed on the antenna substrate;
a second radiation element, disposed on the antenna substrate;
an antenna ground plane, disposed on the antenna substrate, and coupled to the system ground plane; and
a transmission line, disposed on the antenna substrate, coupled to the first and second radiation elements, and having a feed
point;

wherein the system ground plane comprises an additional ground which overlaps with the antenna ground plane partially or completely;
wherein the antenna substrate is not a layer of the system circuit board.

US Pat. No. 9,325,063

RADIATION PATTERN INSULATOR AND MULTIPLE ANTENNAE SYSTEM THEREOF AND COMMUNICATION DEVICE USING THE MULTIPLE ANTENNAE SYSTEM

Industrial Technology Res...

1. A radiation pattern insulator, comprising:
a dielectric substrate, allocated between a plurality of antennae, wherein the dielectric substrate comprises a top surface
and a bottom surface, and a normal direction of the dielectric substrate is substantially perpendicular to propagation directions
of a plurality of electromagnetic waves radiated from the antennae;

a plurality of uniplanar radiation pattern insulation elements, allocated on the top surface or the bottom surface of the
dielectric substrate, wherein the uniplanar radiation pattern insulation elements are located in one plane and are not grounded;
and

a tree shape insulation element, allocated on a surface of the dielectric substrate opposite to the surface on which the uniplanar
radiation pattern insulation elements are allocated.

US Pat. No. 9,375,153

MOTION/VIBRATION SENSOR

INDUSTRIAL TECHNOLOGY RES...

1. A motion/vibration sensor, including:
a transmit/receive antenna unit;
an oscillation unit, coupled to the transmit/receive antenna unit; and
a frequency-mixing unit coupled to the transmit/receive antenna unit and the oscillation unit;
wherein the transmit/receive antenna unit receives an output signal from the oscillation unit and transmits a detection signal
toward at least one object according to the output signal;

the detection signal is reflected by the object as a reflected detection signal and received by the transmit/receive antenna
unit;

the oscillation unit receives the reflected detection signal from the transmit/receive antenna unit for self-injection locking
and the frequency-mixing unit receives the reflected detection signal from the transmit/receive antenna unit for frequency
demodulation; and

the frequency-mixing unit mixes and demodulates the reflected detection signal from the transmit/receive antenna unit with
the output signal from the oscillation unit into a baseband output signal which represents a motion/vibration information.

US Pat. No. 9,623,077

USE OF PEPTIDE FOR ALLEVIATING PAIN

ACADEMIA SINICA, Taipei ...

1. A method for alleviating neuropathic pain in a subject in need thereof, wherein the method comprises administering an effective
amount of piscidin (PCD) peptide and a pharmaceutically acceptable carrier to the subject, wherein the PCD peptide is a PCD-1
peptide comprising the amino acid sequence of SEQ ID NO: 1.

US Pat. No. 10,045,414

METHOD AND APPARATUS FOR INCREASING LUMINOUS INTENSITY OF AN ULTRAVIOLET LIGHT EMITTING DIODE

National Sun Yat-Sen Univ...

1. A method for increasing the luminous intensity of an ultraviolet light emitting diode, comprising:mounting the ultraviolet light emitting diode on a substrate, with an electric heater mounted on the substrate;
using a controller to control the electric heater to heat the ultraviolet light emitting diode through the substrate, and using a temperature sensor to detect a temperature of the ultraviolet light emitting diode;
using the controller to supply electricity to the ultraviolet light emitting diode when the ultraviolet light emitting diode reaches a working temperature; and
making the ultraviolet light emitting diode to emit an ultraviolet light.

US Pat. No. 9,147,808

III-NITRIDE QUANTUM WELL STRUCTURE AND A LIGHT-EMITTING UNIT USING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. An III-nitride quantum well structure comprising:
a gallium nitride base having a gallium nitride buffering layer, a gallium nitride post extending from the gallium nitride
buffering layer along an axis, and a gallium nitride pyramid gradually expanding from the gallium nitride post along the axis
to form a mounting surface, wherein the mounting surface is distant to the gallium nitride post;

an indium gallium nitride layer having a first coupling face and a second coupling face opposite to the first coupling face,
wherein the first coupling face is coupled with the mounting surface of the gallium nitride base; and

a gallium nitride covering layer having a first coupling face and a second coupling face opposite to the first coupling face
of the gallium nitride covering layer, wherein the first coupling face of the gallium nitride covering layer is coupled with
the second coupling face of the indium gallium nitride layer,

wherein the gallium nitride pyramid gradually expands from the gallium nitride post to the indium gallium nitride layer.

US Pat. No. 9,140,671

QUANTITATIVE SENSOR AND MANUFACTURING METHOD THEREOF

National Sun Yat-Sen Univ...

1. A quantitative sensor, comprising:
a substrate having a chamber linking two opposite sides of the substrate, with one of the two opposite sides being a coupling
side, wherein the chamber is adapted to be filled with liquid to be detected;

a first electrode layer mounted on the coupling side of the substrate and in communication with the chamber;
a piezoelectric layer mounted on the first electrode layer and having a growing direction, wherein there is an angle between
a surface of the coupling side and the said growing direction, and the angle is 75-45 degrees;

a second electrode layer formed on the piezoelectric layer and separated from the first electrode layer;
a binding metal layer disposed in the chamber and mounted on the first electrode layer; and
a fluid detection metal layer disposed in the chamber and mounted on the binding metal layer.

US Pat. No. 9,049,080

INJECTION-LOCKED RF RECEIVER HAVING TRIFILAR TRANSFORMER SPLITTER

NATIONAL SUN YAT-SEN UNIV...

1. An injection-locked RF receiver having trifilar transformer splitter, comprising:
a trifilar transformer splitter, having a primary winding, a secondary winding and a tertiary winding, the trifilar transformer
splitter receiving an RF input signal inputted to the primary winding, the secondary winding outputting a first differential
signal and the tertiary winding outputting a second differential signal;

an injection-locked oscillator, connected to the secondary winding and generating a differential oscillation current signal
according to the first differential signal; and

a phase detector, connected to the tertiary winding and the injection-locked oscillator and generating an amplitude signal
according to the second differential signal and the differential oscillation current signal.

US Pat. No. 9,088,272

FREQUENCY SHIFT-KEYING READER CIRCUIT

NATIONAL SUN YAT-SEN UNIV...

1. A frequency shift-keying reader circuit includes:
a band-pass filter for receiving a radio frequency signal and performing a filtering procedure, wherein the radio frequency
signal comprises an operational frequency;

a low noise amplifier for connecting to the band-pass filter and receiving the filtered radio frequency signal, wherein the
low noise amplifier is used for amplifying the radio frequency signal to provide an injection signal;

a first balun for connecting to the low noise amplifier and receiving the injection signal, the first balun generates the
first differential signal and the second differential signal, wherein the first differential signal and the second differential
signal are mutually inverted;

an injection-lock divide-by-2 frequency divider for connecting to the low noise amplifier and receiving the injection signal,
wherein the injection-lock divide-by-2 frequency divider is locked at a lock frequency by the injection signal, the lock frequency
is half the operational frequency, the injection-lock divide-by-2 frequency divider provides a first oscillation signal and
a second oscillation signal, wherein the first oscillation signal and the second oscillation signal are mutually inverted;

a sub-harmonic mixer for connecting to the first balun and the injection-lock divide-by-2 frequency divider, the sub-harmonic
mixer receives the first differential signal, the second differential signal, the first oscillation signal and the second
oscillation signal for performing a mixing procedure and generates an output signal; and

a low-pass filter, the low-pass filter connects to the sub-harmonic mixer and performs a filtering procedure to the output
signal.

US Pat. No. 9,436,611

PROCESSOR, CACHE MEMORY OF THE PROCESSOR AND CONTROL METHOD OF THE PROCESSOR

NATIONAL SUN YAT-SEN UNIV...

1. A processor capable of storing trace data, comprising:
a core adapted to execute programs; and
a cache memory electrically connected to the core and comprising a core way and a trace way, wherein the core way is adapted
to store data that is required when the core executes the programs, and wherein the trace way is adapted to store data that
is generated during debugging operations of the core,

wherein each of the core way and the trace way comprises a data memory, a tag memory and a write back address memory, wherein
the data memory of the core way is adapted to store the data that is required when the core executes the programs, wherein
the data memory of the trace way is adapted to store the data that is generated during the debugging operations of the core,
wherein the tag memory stores a plurality of states of row and a plurality of tags, and selects one of the plurality of states
of row and one of the plurality of tags according to an address outputted by the core, wherein the write back address memory
is adapted to store a plurality of row addresses, wherein the cache memory further comprises:

a data/trace cache control register adapted to store a predetermined trace address and a plurality of cache way control bits,
wherein each of the plurality of cache way control bits corresponds to a respective one of the data memories and comprises
two state values;

a line index calculator generating a trace address, a trace data and a trace enabling bit according to the plurality of cache
way control bits, a valid trace bit and the data that is generated during the debugging operations of the core;

a cache controller generating a core data, a core enabling bit and a cache way cleaning bit according to the address outputted
by the core and the data that is required when the core executes the programs, wherein the address comprises a set index and
an address tag;

a plurality of data/trace configuration units, each corresponding to a respective one of the plurality of cache way control
bits, wherein each of the plurality of data/trace configuration units controls the core data to be written into the data memory
according to one of the two state values of the cache way control bit, the set index and the core enabling bit, or controls
the trace data to be written into the data memory according to another one of the two state values of the cache way control
bit, the trace address and the trace enabling bit;

a plurality of comparators, each comparing the address tag with the tag outputted by the tag memory and generating a tag hit
bit;

a plurality of trace protection units, each generating a locking bit and a hit bit according to a corresponding one of the
plurality of cache way control bits, the plurality of states of row outputted by the tag memory and the tag hit bit; and

a plurality of trace dump units, each generating a write-back address according to a corresponding one of the plurality of
cache way control bits, the plurality of row addresses, the plurality of states of row and the predetermined trace address.

US Pat. No. 9,287,501

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PRODUCING SAME

NATIONAL SUN YAT-SEN UNIV...

1. A resistive random access memory comprising:
a first electrode layer;
an oxygen-poor layer disposed on the first electrode layer, with the oxygen-poor layer formed by indium tin oxide, indium
oxide, tin dioxide, or zinc oxide;

an insulating layer disposed on the oxygen-poor layer, with the insulating layer formed by silicon dioxide or hafnium oxide;
and

a second electrode layer disposed on the insulating layer,
wherein the second electrode layer is formed by indium tin oxide.

US Pat. No. 9,059,519

MIMO ANTENNA DEVICE, ANTENNA AND ANTENNA PACKAGE

NATIONAL SUN YAT-SEN UNIV...

1. An antenna package comprising:
a carrying unit comprising a base plate, a substrate and a cover plate being stacked, wherein the base plate has a first ground
pad, and wherein the cover plate has a second ground pad electrically coupled to the first ground pad;

at least one antenna, wherein each of the at least one antenna comprises a T-shaped feeding unit, a radiation unit and a ground
unit, wherein the T-shaped feeding unit and the radiation unit are sandwiched between the substrate and the cover plate, wherein
the T-shaped feeding unit forms a strip portion and a top portion, wherein the radiation unit has a first end and a second
end, wherein the radiation unit extends from the first end to the second end to form a rectangular region and a spacing, wherein
the first end of the radiation unit extends parallel to the top portion of the T-shaped feeding unit, wherein the ground unit
is disposed along two sides of the strip portion, and wherein the ground unit is electrically coupled to the second end of
the radiation unit and the second ground pad of the carrying unit; and

at least one circuit unit mounted on the cover plate and electrically coupled to the second ground pad of the carrying unit
and the ground unit of each antenna.

US Pat. No. 9,118,362

SYSTEM FOR SELECTING TRANSMISSION MODE UNDER MULTI-INPUT MULTI-OUTPUT BASED ON SCHEDULING NUMBER AND METHOD THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A method for selecting a transmission mode under a multi-input multi-output (MIMO) architecture based on a scheduling number,
used in a base station transmitting/receiving data with a plurality of client ends through a plurality of antennas by the
MIMO architecture, comprising the steps of:
receiving a plurality of channel state information from the client ends, respectively;
determining a minimum equivalent diversity signal to noise ratio (SNR) in a spatial diversity (SD) mode corresponding to the
client ends, and determining a minimum equivalent multiplexing SNR in a spatial multiplexing (SM) mode corresponding to the
client ends, according to the channel state information;

selecting a diversity modulation coding in the SD mode according to the minimum equivalent diversity SNR, and selecting a
multiplexing modulation coding in the SM mode according to the minimum equivalent multiplexing SNR;

calculating a diversity spectral efficiency in the SD mode and a multiplexing spectral efficiency in the SM mode; and
selecting the transmission mode between the SD mode and the SM mode according to a diversity scheduling number corresponding
to the diversity modulation coding a multiplexing scheduling number corresponding to the multiplexing modulation coding, the
diversity spectral efficiency and the multiplexing spectral efficiency to transmit data from the base station in the selected
transmission mode.

US Pat. No. 9,423,496

WIRELESS DETECTION DEVICES AND WIRELESS DETECTION METHODS

NATIONAL SUN YAT-SEN UNIV...

1. A wireless detection device, comprising:
a voltage control oscillation unit, generating a plurality of oscillation signals with different frequencies according to
analog control voltages;

a transceiving unit, outputting a plurality of first wireless signals to an object in a predetermined area according to the
oscillation signals, and receiving second wireless signals generated by reflection of the first wireless signals to yield
self-injection-locking signals for modulating the voltage control oscillation unit;

a demodulation unit, configured to demodulate the oscillation signals into first voltage signals;
a signal generating unit, configured to generate the analog control voltages; and
a processing unit, subtracting the corresponding analog control voltages from the first voltage signals to generate second
voltage signals,

wherein when the variation of the second voltage signals in frequency domain exceeds a predetermined value on a target frequency,
the processing unit calculates a distance between the object and the transceiving unit and further a variation frequency of
the distance according to the target frequency, wherein the processing unit further comprises:

a first subtractor, connected to the signal generating unit and the demodulation unit, and configured to subtract the corresponding
analog control voltages from the first voltage signals to generate the second voltage signals;

a first calculating unit, connected to the first subtractor, and configured to transform the second voltage signals into frequency
domain;

a storage unit, configured to store spectra of the transformed frequency domain of the second voltage signals at different
times;

a second subtractor, connected to the storage unit, and configured to obtain a difference between the spectra of the second
voltage signals; and

a second calculating unit, connected to the storage unit, and configured to transform the time-varying spectra into the variation
frequency of the distance.

US Pat. No. 9,369,091

DUAL FEEDBACK LOW NOISE AMPLIFIER

NATIONAL SUN YAT-SEN UNIV...

1. A dual feedback low noise amplifier includes:
a first transistor having a first terminal, a second terminal and a third terminal;
a second transistor having a fourth terminal, a fifth terminal and a sixth terminal;
a first coupling capacitor, wherein one end of the first coupling capacitor connects to the second terminal of the first transistor,
and the other end of the first coupling capacitor connects to the fourth terminal of the second transistor;

a second coupling capacitor, wherein one end of the second coupling capacitor connects to the first terminal of the first
transistor, and the other end of the second coupling capacitor connects to the fifth terminal of the second transistor;

a first transformer having a first secondary inductor and a first primary inductor, wherein one end of the first secondary
inductor connects to a ground terminal, the other end of the first secondary inductor connects to the second terminal of the
first transistor, one end of the first primary inductor connects to a voltage terminal, and the other end of the first primary
inductor connects to the third terminal of the first transistor;

a second transformer having a second secondary primary inductor and a second primary inductor, wherein one end of the second
secondary inductor connects to the ground terminal, the other end of the second secondary inductor connects to the fifth terminal
of the second transistor, one end of the second primary inductor connects to the voltage terminal, and the other end of the
second primary inductor connects to the sixth terminal of the second transistor, and,

a first peaking inductor and a second peaking inductor, the first peaking inductor connects to the third terminal of the first
transistor, the second peaking inductor connects to the sixth terminal of the second transistor, wherein a parallel/series
peaking network is composed of the first peaking inductor and the first primary inductor, and the other parallel/series peaking
network is composed of the second peaking inductor and the second primary inductor.

US Pat. No. 9,603,555

MOTION/VIBRATION DETECTION SYSTEM AND METHOD WITH SELF-INJECTION LOCKING

INDUSTRIAL TECHNOLOGY RES...

1. A motion/vibration detection system, comprising:
at least one transmitter, the at least one transmitter comprising a transmit/receive antenna unit and a first oscillator unit;
and

at least one receiver, comprising a receiving unit and a demodulation unit; wherein,
the transmit/receive antenna unit is coupled to or electrically connected to a signal output port of the first oscillator
unit, receives an output signal from the first oscillator unit and transmits a detection signal;

the detection signal is reflected from at least one object as a reflected detection signal, which is received by the transmit/receive
antenna unit;

the transmit/receive antenna unit injects the reflected detection signal, as an injection signal, into the first oscillator
unit and accordingly the first oscillator unit is under a self-injection locking mode;

the receiving unit is coupled to or electrically connected to the demodulation unit and receives the detection signal; and
the demodulation unit demodulates the detection signal received by the receiving unit into a baseband output signal, to extract
at least one motion/vibration information of the at least one object.

US Pat. No. 9,276,548

STACKED LC RESONATOR AND BAND PASS FILTER USING THE SAME

NATIONAL SUN YAT-SEN UNIV...

8. A band pass filter structure comprising:
a coupled structure of the two stacked LC resonators, comprising:
a flat metal base layer;
a plurality of coupled spiral inductors disposed layer-by-layer, parallel to the flat metal base layer; and
a plurality of coupled dielectric layers, formed between the coupled spiral inductors, and between the flat metal base layer
and the coupled spiral inductor corresponding to the flat metal base layer;

wherein each of the plurality of coupled spiral inductor pairs comprises two spiral inductors that are disposed correspondingly
to each other,

wherein each of the coupled structure of the two stacked LC resonators has N spiral inductors and N conductive poles for N>1,
and the Nth conductive pole is connected between the second end of the (N?1)th spiral inductor of the each of the coupled
structure of the two stacked LC resonators and the first end of the Nth spiral inductor of the each of the coupled structure
of the two stacked LC resonators, and the second end of the Nth spiral inductor of the each of the coupled structure of the
two stacked LC resonators is open-ended.

US Pat. No. 9,578,604

POWER ALLOCATION METHOD FOR TRANSMITTING SCALABLE VIDEO OVER MIMO SYSTEM

NATIONAL SUN YAT-SEN UNIV...

1. A power-allocation method for transmitting scalable video over a MIMO system includes:
encoding a video sequence into L layers;
performing modulation and coding schemes (MCSs) to the layers and generating a bit error rate or a symbol error rate respectively
for each of the layers after MCSs procedure;

decomposing an optimized power allocation problem into L sub-power allocation problems and obtaining a candidate power allocation
solution set by solving each of the sub-power allocation problems respectively based on the bit error rate or the symbol error
rate of each of the layers and derivative of the bit error rate or the symbol error rate of each of the layers, wherein each
of the sub-power allocation problems allows up to l(l=1, 2, . . . , L) layers to proceed transmission respectively; and

selecting the candidate power allocation solution set with a largest quality of experiences as the optimized power allocation
solution of the scalable video transmission over the MIMO system, wherein the expression of the optimized power allocation
of the scalable video transmission over the MIMO system is:

wherein p* is the optimized power allocation of the scalable video transmission over the MIMO system, uk is utility of the kth layer, fk(•) is the frame correction rate of the kth layer, and pl* is the candidate power allocation solution set of the lth sub-power allocation problem.

US Pat. No. 9,450,242

METHOD FOR MANUFACTURING NANOSTRUCTURED METAL OXIDE CALCINATE AND NANOSTRUCTURED METAL OXIDE CALCINATE THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A method for manufacturing a nanostructured metal oxide calcinate includes:
disposing a first metal material and a second metal material into a reaction slot to make the first metal material and the
second metal material dissolved within a solvent to form a mixture, wherein a valence difference between the first metal material
and the second metal material ranges between 1 to 7, the first metal material is in a metal state or in an oxidation state
of metal that is not in a highest oxidation state, the second metal material is in an oxidation state of metal that is not
in a metal state, a pH value of the mixture ranges between 0 to 7, the mixture performs a redox reaction to generate a metal
oxide material, wherein the redox reaction is performed at a temperature between 60 to 150 degrees Celsius and a pressure
between 19.95 to 198.6 kPa; and

calcining the metal oxide material for obtaining a nanostructured metal oxide calcinate.

US Pat. No. 9,146,212

THREAD-BASED MICROFLUIDIC GUIDING SYSTEM

NATIONAL SUN YAT-SEN UNIV...

1. A thread-based microfluidic guiding system, comprising:
a substrate;
a first fiber thread disposed on the substrate and sequentially having a sample fluid injection end, a sample fluid transmission
section, a first turning portion, a mixture fluid transmission section, and a first waste fluid end, wherein the sample fluid
transmission section is turned and coupled to the mixture fluid transmission section through the first turning portion;

a second fiber thread disposed on the substrate and sequentially having a buffer fluid injection end, a buffer fluid transmission
section, a second turning portion, a waste fluid transmission section, and a second waste fluid end, wherein the buffer fluid
transmission section is turned and coupled to the waste fluid transmission section through the second turning portion, and
the first turning portion crosses and contacts the second turning portion;

a working electrode disposed on the substrate and contacting the mixture fluid transmission section to form a detection area
which is close to the first waste fluid end;

a counter electrode which is disposed on the substrate and in contact with the mixture fluid transmission section, close to
the working electrode, and located between the working electrode and the first waste fluid end;

a reference electrode which is disposed on the substrate and in contact with the mixture fluid transmission section, and located
between the working electrode and the counter electrode; and

a decoupler electrode which is disposed on the substrate and in contact with the mixture fluid transmission section, close
to the working electrode, and located between the first turning portion and working electrode;

wherein each of the working electrode, the counter electrode, the reference electrode and the decoupler electrode has a flat
top surface parallel to a top surface of the substrate, and a groove configured as a depression in the flat top surface and
having a plurality of interior wall surfaces for contacting with the mixture fluid transmission section.

US Pat. No. 9,644,069

POLYMER OF FLUORINE-CONTAINING SULFONATED POLY(ARYLENE ETHER)S AND METHOD OF MANUFACTURING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. A polymer of fluorine-containing sulfonated poly(arylene ether)s, having a molecular formula given in the following formula
(1)
wherein X is
and
wherein Z is independently selected from a fluoro- and trifluoromethyl group; n is an integer greater than or equal to 2;
and j is an integer from 1 to 10.

US Pat. No. 9,529,027

METHOD FOR ESTIMATING PCB RADIATED EMISSIONS

NATIONAL SUN YAT-SEN UNIV...

1. A method for estimating PCB radiated emissions including:
providing a BCI (Bulk Current Injection) probe and a vector network analyzer, wherein the BCI probe comprises an inducting
portion, a measuring space surrounded by the inducting portion and a measuring port coupled to the inducting portion, the
vector network analyzer comprises a signal output port, a probe-measuring port and a signal input port;

performing a calibration step for providing a clamping device having a chamber, a first calibration port and a second calibration
port, wherein the BCI probe is disposed in the chamber, the signal output port of the vector network analyzer is coupled to
the first calibration port, the probe-measuring port is coupled to the measuring port of the BCI probe, the signal input port
is coupled to the second calibration port, wherein a calibration signal is outputted from the signal output port of the vector
network analyzer to the first calibration port to make the BCI probe output an induction signal transmitted to the probe-measuring
port of the vector network analyzer for obtaining a transfer impedance of the BCI probe;

performing a measurement step for proving an object having at least one input port and at least one output port, wherein the
object is disposed in the measuring space, the signal output port is coupled to the at least one input port of the object,
the probe-measuring port is coupled to the measuring port of the BCI probe, the signal input port is coupled to the at least
one output port of the object, wherein a test signal is outputted from the signal output port of the vector network analyzer
to the at least one input port of the object to make the BCI probe output a power signal transmitted to the probe-measuring
port of the vector network analyzer, wherein an output signal is outputted from the at least one output port to the signal
input port of the vector network analyzer for measuring a measurement-input transfer function between the power signal and
the test signal and an output-input transfer function between the output signal and the test signal; and

performing an estimation step for estimating radiated emissions of the object based on the measurement-input transfer function,
the output-input transfer function and the transfer impedance.

US Pat. No. 9,079,793

OPTICAL FIBER AND METHOD FOR MANUFACTURING SAME

NATIONAL SUN YAT-SEN UNIV...

10. An optical fiber comprising:
a crystal fiber including a heat resistant tube and a crystal filament received in the heat resistant tube, with an internal
positive electrode and an internal negative electrode sandwiched between an outer periphery of the crystal filament and an
inner periphery of the heat resistant tube, with the internal positive electrode not electrically connected to the internal
negative electrode, with the crystal filament enclosing a solid core in a center thereof;

an external positive electrode mounted on an end of the crystal fiber and electrically connected to the internal positive
electrode; and

an external negative electrode mounted on another end of the crystal fiber and electrically connected to the internal negative
electrode.

US Pat. No. 9,388,055

SILVER COMPOUND, SILVER INK AND METHOD FOR INKJET PRINTING ON FLEXIBLE SUBSTRATE USING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. A silver compound having the structure given in the following formula (I):

US Pat. No. 9,444,379

WIND POWER EXCITATION SYNCHRONOUS GENERATION SYSTEM HAVING MAXIMUM POWER DETERMINING UNIT AND CONTROL METHOD THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A control method of a wind power excitation synchronous generation system, wherein the control method comprises the following
steps of:
detecting an output voltage, an output current and an output power of an excitation synchronous generator by using a power
detector, so that a real-time output power information is obtained;

using a motor to control a driving of a transmission mechanism, wherein the transmission mechanism is connected between a
wind turbine rotor and the excitation synchronous generator to drive the excitation synchronous generator;

using an encoder to transmits a position information of the excitation synchronous generator to a digital signal processing
controller;

using a phase detector to obtain and transmit a phase information of a utility grid to the digital signal processing controller;
transferring the phase information of the utility grid into a present position command;
comparing the present position command with the position information of the excitation synchronous generator to determine
a duty cycle width of a pulse width modulation controlling unit, and to output a power switch timing to a power driving inverter
for driving the motor;

performing a position servo control of the motor according to the position information of the excitation synchronous generator,
so as to allow the transmission mechanism to drive the excitation synchronous generator at a predetermined speed, thereby
generating the output power;

transmitting the output power to the utility grid in parallel;
using a maximum power determining unit to generate a power command according to a sum of a reference wind power and a fine-tuning
power, wherein the reference wind power is defined by a pitch angle of the wind turbine rotor and a reference wind speed,
and the fine-tuning power is defined as a function of a motor input power;

tracking a predetermined power of the power generation system by the power command;
wherein the real-time output power information is fed back to a power controller to compare with the power command, and the
power controller is used for generating an excitation current command to an excitation controlling unit, and the excitation
controlling unit is used for generating an excitation current for controlling an excitation field of the excitation synchronous
generator.

US Pat. No. 9,281,411

THIN FILM TRANSISTOR

NATIONAL SUN YAT-SEN UNIV...

1. A thin film transistor, comprising:
a substrate;
a gate arranged on the substrate;
an insulating layer arranged on the gate;
a source arranged on the insulating layer;
a drain arranged on the insulating layer; and
an active layer arranged between the source and the drain, wherein the active layer comprises a bottom layer, an intermediate
layer and a top layer stacked together, wherein the bottom layer is arranged on the insulating layer, wherein the conductivity
of the intermediate layer is higher than the conductivity of the bottom layer, and wherein the conductivity of the bottom
layer is higher than the conductivity of the top layer.

US Pat. No. 9,238,620

PHARMACEUTICAL USES OF SULFUR-CONTAINING COMPOUND

NATIONAL SUN YAT-SEN UNIV...

1. A method for inhibiting lung cancer metastasis and/or growth comprising administering a subject with a compound represented
by the following general formula 1,

wherein:
R1 is selected from the group consisting of H, R5 and R5C(?O);

R2 is selected from the group consisting of S and (O?)S(?O);

R3 is selected from the group consisting of H, CH3 and CH2CH2C(?O)OR5;

R4 is selected from the group consisting of R5, OR5,

N(R5)2, NH2, NHR5 and OH; and
R5 is selected from an alkyl group having one to six carbon atoms and an unsubstituted or substituted phenyl group;

provided that when R3 is CH2CH2C(?O)OR5, R4 is OR5; and

when R1 is H, R2 is S and R3 is H, R4 is not CH3;
wherein the compound represented by the general formula 1 is selected from the group consisting of formulae 3, 6 to 9, and
18 to 20;

US Pat. No. 9,685,610

METHOD FOR PRODUCING A RESISTIVE RANDOM ACCESS MEMORY

NATIONAL SUN YAT-SEN UNIV...

1. A method for producing a resistive random access memory, comprising:
preparing a first metal layer;
sputtering a resistive switching layer on the first metal layer;
conducting surface treatment on the resistive switching layer by using a plasma containing mobile ions to dope the mobile
ions into the resistive switching layer, with a polarity of the mobile ions being opposite to a polarity of oxygen ions; and

sputtering a second metal layer on the resistive switching layer.

US Pat. No. 9,312,440

EPITAXY STRUCTURE OF A LIGHT EMITTING ELEMENT HAVING III-NITRIDE QUANTUM WELLS

NATIONAL SUN YAT-SEN UNIV...

1. An epitaxy structure of a light emitting element comprising:
a gallium nitride substrate including a gallium nitride buffer layer, a gallium nitride hexagonal prism, and a gallium nitride
hexagonal pyramid, with the gallium nitride hexagonal prism extending from the gallium nitride buffer layer along an axis,
with the gallium nitride hexagonal pyramid extending from the gallium nitride hexagonal prism along the axis and gradually
expanding to form a hexagonal frustum;

an N-type gallium nitride layer located on the gallium nitride hexagonal pyramid of the gallium nitride substrate;
a quantum well unit including an indium gallium nitride layer and a gallium nitride layer, with the indium gallium nitride
layer located on the N-type gallium nitride layer, and with the gallium nitride layer located on the indium gallium nitride
layer; and

a P-type gallium nitride layer located on the gallium nitride layer of the quantum well unit.
US Pat. No. 9,303,049

NANODOT AND METHOD FOR MANUFACTURING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. A method for manufacturing a nanodot, comprising:
providing a hydrolysable silane, wherein the hydrolysable silane has one or more hydrolysable groups and one or more substituted
or non-substituted hydrocarbon groups; and

performing a one-step heat treatment to hydrolyze and condensate the hydrolysable silane to form a nanodot, wherein the nanodot
comprises:

a core, the core is selected from the group consisting of a semiconductor core or a metal core, wherein the core consists
of a silicon oxide core; and

a self-assembled monolayer (SAM) comprising the substituted or non-substituted hydrocarbon groups, wherein the self-assembled
monolayer is connected to the core by covalent bonds.

US Pat. No. 9,817,076

ESTIMATION CIRCUIT FOR SOC AND SOH OF BATTERY

NATIONAL SUN YAT-SEN UNIV...

1. An estimation circuit for determining a State of Charge (SOC) and a State of Health (SOH) of a battery includes:
a control circuit configured for receiving a reset signal, a voltage signal and a current signal, wherein the control circuit
is further configured to determine a voltage level of an electrical-capacity calculation reset signal, an estimation optional
signal, an over voltage enable signal, a normal state enable signal, a low voltage enable signal and a current-estimated reset
signal configured to be outputted from the control circuit according to the reset signal, the voltage signal and the current
signal;

a current estimation circuit having a current modification circuit and a Coulomb integral circuit, wherein the current modification
circuit is configured to receive the current signal and multiply the current signal by a modification parameter and output
a modified current signal, the Coulomb integral circuit is configured to receive the modified current signal and the current-estimated
reset signal of the control circuit and integrate the modified current signal to output an estimating electrical-capacity
value;

an open-circuit voltage detection circuit configured for receiving the voltage signal, wherein the open-circuit voltage detection
circuit is configured to output an initial electrical-capacity value according to the voltage signal;

a multiplexer configured for receiving the estimation optional signal of the control circuit, the estimating electrical-capacity
value of the current estimation circuit and the initial electrical-capacity value of the open-circuit voltage detection circuit,
wherein the multiplexer is configured to output an estimating electrical-capacity signal and determine the estimating electrical-capacity
signal equal to the estimating electrical-capacity value or the initial electrical-capacity value according to the estimation
optional signal; and

an electrical-capacity calculation circuit having an over voltage register, a normal state register and a low voltage register,
wherein the over voltage register is configured to receive the estimating electrical-capacity signal, the electrical-capacity
calculation reset signal and the over voltage enable signal, the normal state register is configured to receive the estimating
electrical- capacity signal, the electrical-capacity calculation reset signal and the normal state enable signal, the low
voltage register receives the estimating electrical- capacity signal, the electrical-capacity calculation reset signal and
the low voltage enable signal, wherein the over voltage register, the normal state register and the low voltage register are
configured to determine whether to store the estimating electrical-capacity signal controlled by the over voltage enable signal,
the normal state enable signal and the low voltage enable signal respectively,

wherein the electrical-capacity calculation circuit is configured to determine the SOC of the battery using a signal stored
in the normal state register and a signal stored in the low voltage register, and

wherein the electrical-capacity calculation circuit is configured to determine the SOH of the battery using a signal stored
in the over voltage register and the signal stored in the low voltage register.

US Pat. No. 9,607,818

MULTIMODE IONIZATION DEVICE

National Sun Yat-Sen Univ...

1. A multimode ionization device adapted for a mass spectrometer which includes a receiving unit disposed to admit therein
ionized analytes that are derived from a sample, and that are to be analyzed by the mass spectrometer, said multimode ionization
device comprising:
an electrospray unit including a reservoir for providing a liquid electrospray medium, and a nozzle which is disposed downstream
of said reservoir and which is configured to form an electrospray plume of the liquid electrospray medium thereat, said nozzle
being disposed to be spaced apart from the receiving unit so as to define a traveling path therebetween;

a charge generating unit configured to laden the liquid electrospray medium with a plurality of charges when the liquid electrospray
medium runs up to said nozzle, thereby permitting the liquid electrospray medium to leave said nozzle as the electrospray
plume for heading toward the receiving unit to be admitted thereinto; and

a plasma supplying unit configured to generate and guide a plasma plume to mix with the electrospray plume so as to form a
plume combination in a confluent zone which is upstream of a linearly-extending end zone of the traveling path, and which
is oriented to permit at least one of analytes carried in the plume combination to travel to the receiving unit along the
linearly-extending end zone, such that as a result of approaching the receiving unit along the linearly-extending end zone,
charges of the plume combination will pass on to said at least one of the analytes carried in the plume combination to thereby
form a corresponding one of the ionized analytes,

wherein said charge generating unit includes
an ion generating chamber having an outlet disposed upstream of said nozzle, and an inner surface having a material, and
a source of high velocity gas disposed to fluidly communicate with said inner surface to permit a physical interaction between
the high velocity gas and said material to produce the charges for the liquid electrospray medium to be ladened therewith.

US Pat. No. 9,209,472

POLYMER OF SULFONATED POLY(ARYLENE ETHER)S AND MANUFACTURING METHOD THEREOF

National Sun Yat-sen Univ...

1. A manufacturing method for a polymer of sulfonated poly(arylene ether)s, comprising steps of:
(S01) providing a multi-phenyl glycol monomer which has the structure given in the following formula (I):
wherein X is

(S02) providing a multi-phenyl dihalo monomer having the structure given in the following formula (II):
Ha-Y-Ha  (II)
wherein Ha is selected from fluorine (F), chlorine (Cl) or bromine (Br), Y is selected from

(S03) forming a polymer of poly(arylene ether)s by a nucleophilic displacement reaction from the multi-phenyl glycol monomer
and the multi-phenyl dihalo monomer, which has the structure given in the following formula (III):

Wherein n is an integer greater than or equal to 2; and
(S04) carrying out a sulfonation modification of the polymer of the poly(arylene ether)s to form a polymer of sulfonated poly(arylene
ether)s having the structure given in the following formula (IV):

wherein i is an integer between 1 and 10.
US Pat. No. 9,937,150

METHOD FOR ENHANCING THE OXYGENATION LEVEL OF TISSUE CELLS AS AN ALTERNATIVE METHOD FOR HYPERBARIC OXYGEN THERAPY

National Sun Yat-sen Univ...

1. A method for substituting for or acting with a hyperbaric oxygen therapy (HBOT) to treat hypoxia, comprising the step of: administering a phthalide compound in combination with 2,3-bisphosphorglycerate to a subject in need thereof to increase oxygen release efficiency of hemoglobin (Hb) in the subject, wherein the subject is a subject treated by the hyperbaric oxygen therapy or a subject who needs to be treated by the hyperbaric oxygen therapy, wherein the phthalide compound is selected from the group consisting of Z-butylidenephthalide, Z-ligustilide, senkyunolide A, senkyunolide H, senkyunolide I, senkyunolide F, E-butylidenephthalide, E-ligustilide, 3-butylphthalide, 3-butylidene-4-hydrophthalide, 6,7-dihydroxyligustilide and 6,7-epoxyligustilide.

US Pat. No. 9,431,258

METHOD FOR PHOTODEPOSITING A PARTICLE ON A GRAPHENE-SEMICONDUCTOR HYBRID PANEL AND A SEMICONDUCTOR STRUCTURE

NATIONAL SUN YAT-SEN UNIV...

1. A method for photodepositing a particle on a graphene-semiconductor hybrid panel, comprising:
providing a graphene-semiconductor hybrid panel comprising a semiconductor substrate and a graphene sheet, wherein the graphene
sheet is adhered to a surface of the semiconductor substrate;

dipping the graphene-semiconductor hybrid panel in a fluid, wherein the fluid contains a precursor; and
forming photoinduced electrons and holes in the semiconductor substrate by irradiating the semiconductor substrate using a
light source, until the precursor has been reduced or oxidized to form a particle photodeposited on a surface of the graphene
sheet by the photoinduced electrons or holes transferred to the graphene sheet, wherein the light source has an energy equal
to or higher than a band gap of the semiconductor substrate.

US Pat. No. 9,496,493

RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR PRODUCING SAME

NATIONAL SUN YAT-SEN UNIV...

1. A resistive random access memory comprising:
two electrode layers; and
a resistive switching layer mounted between the two electrode layers, with the resistive switching layer consisting essentially
of insulating material with oxygen, metal material, and mobile ions, and with a polarity of the mobile ions being opposite
to a polarity of oxygen ions.

US Pat. No. 10,047,063

METHOD FOR IMPROVING THE OXYGEN-RELEASING ABILITY OF HEMOGLOBIN TO ORGANS OR PERIPHERAL TISSUES IN HUMAN BODIES AND A MEDICATION THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A method for improving the oxygen-releasing ability of hemoglobin, hemoglobin variants, recombinant hemoglobin or hemoglobin-based blood substitutes to organs or peripheral tissues in human bodies, by administering a compound of Formula I to a subject in need thereof, wherein the compound of Formula I forms at least one hydrogen bond with ?Arg141 of hemoglobin, strengthening the ?1/?2 interface of hemoglobin, further stabilizing the oxygenated hemoglobin in the low oxygen affinity “T” state and facilitating the oxygen release to the organs or the peripheral tissues,
wherein R1 is C2-C6 alkyl, C2-C6 alkenyl or C2-C6 alkenol group;
R2 is one or more H or OH; and
R3 and R4 are each independent H or OH or both of them combine together to form a epoxy group.

US Pat. No. 9,559,422

COMMUNICATION DEVICE AND METHOD FOR DESIGNING MULTI-ANTENNA SYSTEM THEREOF

Industrial Technology Res...

1. A communication device, comprising:
a ground conductor portion comprising at least a first radiating edge and a second radiating edge; and
a multi-antenna system, comprising at least:
a first resonant portion disposed on the first radiating edge of the ground conductor portion, the first resonant portion
comprising a first electrically coupling portion and a first switch, wherein the first resonant portion has a loop resonant
structure or an open-slot resonant structure, and the first resonant portion has a first resonant path, the first switch is
disposed on the first resonant path, the first electrically coupling portion makes the length of the first resonant path less
than or equal to 0.18 times the wavelength of the lowest operating frequency of the multi-antenna system, thereby exciting
the first radiating edge to form a strong surface current distribution, and generating a first effective radiating energy
and at least one first resonant mode covering at least one first operating band, the first effective radiating energy generated
having a first strongest radiation direction;

a second resonant portion disposed on the second radiating edge of the ground conductor portion, the second resonant portion
comprising a second electrically coupling portion and a second switch, wherein the second resonant portion has a loop resonant
structure or an open-slot resonant structure, and the second resonant portion has a second resonant path, the second switch
is disposed on the second resonant path, the second electrically coupling portion makes the length of the second resonant
path less than or equal to 0.18 times the wavelength of the lowest operating frequency of the multi-antenna system, thereby
exciting the second radiating edge to form a strong surface current distribution, and generating a second effective radiating
energy and at least one second resonant mode covering at least the first operating band, the second effective radiating energy
generated having a second strongest radiation direction;

a first control circuit respectively and electrically coupled to the first resonant portion and the second resonant portion
through a plurality of signal lines, the first control circuit switching a signal source to electrically couple to one of
the first resonant portion or the second resonant portion, and generating the first strongest radiation direction or the second
strongest radiation direction, or controlling the signal source to concurrently electrically couple to the first resonant
portion and the second resonant portion, and generating a third effective radiating energy having a third strongest radiation
direction; and

a second control circuit respectively and electrically coupled to the first switch and the second switch through a plurality
of signal lines, the second control circuit switching the first switch to a conducting state when the signal source is electrically
coupled to the first resonant portion, and switching the second switch to the conducting state when the signal source is electrically
coupled to the second resonant portion.

US Pat. No. 9,443,965

METHOD FOR PRODUCING A THIN FILM TRANSISTOR

NATIONAL SUN YAT-SEN UNIV...

1. A method for producing a thin film transistor, comprising:
forming a transistor prototype on a substrate, with the transistor prototype including two transparent electrodes, with the
two transparent electrodes adapted to form a source and a drain of a thin film transistor; and metallizing the two transparent
electrodes for reducing contact resistance of the two transparent electrodes by

exposing the two transparent electrodes of the transistor prototype in an environment full of a hydrogen plasma with a biasing
power of 200-400 W for 20-100 seconds, with the hydrogen plasma conducting a surface treatment on the two transparent electrodes
of the transistor prototype to form the thin film transistor.

US Pat. No. 9,302,249

METHOD FOR PREPARING COMPOSITE SULFUR-MODIFIED POWDERED ACTIVATED CARBON

NATIONAL SUN YAT-SEN UNIV...

1. A method for preparing composite sulfur-modified powdered activated carbon, comprising the following steps:
(a) providing a powdered activated carbon;
(b) proceeding a drying step on the powdered activated carbon;
(c) proceeding a liquid-phase sulfur modification step on the dried powdered activated carbon, wherein the liquid-phase sulfur
modification step includes immersing the dried powdered activated carbon in a sulfur-containing solution, and the sulfur-containing
solution is a sodium sulfide (Na2S) solution of a mass ratio of 3% to 5%;

(d) proceeding a granulation step, so as to obtain a granular activated carbon from the sulfur-modified powdered activated
carbon; and

(e) proceeding a heating step on the granular activated carbon, so as to form the composite sulfur-modified powdered activated
carbon.

US Pat. No. 9,853,214

RESISTIVE RANDOM ACCESS MEMORY DEVICE WITH REDUCED POWER CONSUMPTION

National Sun Yat-Sen Univ...

1. A resistive random access memory device comprising:
a first electrode having a mounting face;
a separating medium having a first face in contact with the mounting face of the first electrode, a second face opposite to
the first face, and an inner face extending between the first and second faces, wherein the separating medium forms a through
hole extending from the first face to the second face, wherein a part of the mounting face of the first electrode is not covered
by the separating medium, and wherein the separating medium has a first dielectric;

a resistance changing layer extending along the part of the mounting face of the first electrode as well as the inner face
and the second face of the separating medium, wherein the resistance changing layer has a second dielectric having a dielectric
constant larger than a dielectric constant of the first dielectric by 2 or less; and

a second electrode arranged on the resistance changing layer,
wherein the separating medium further comprises a third dielectric having a dielectric constant different from the dielectric
constant of the first dielectric, wherein the first and third dielectrics have different distribution regions, and wherein
both the first and third dielectrics adjoin the resistance changing layer.

US Pat. No. 9,846,226

MOTION DETECTION DEVICE

National Sun Yat-sen Univ...

1. A motion detection device, comprising:
a first antenna, receiving a first signal generated through a second signal reflected by a target object;
a voltage-controlled oscillator, receiving a frequency adjustment signal and one of the first signal and the second signal,
so as to generate an oscillating signal according to the frequency adjustment signal and the one of the first signal and the
second signal;

a phase detector, coupled to the voltage-controlled oscillator, receiving the oscillating signal and another one of the first
signal and the second signal and generating a first phase output signal and a second phase output signal, wherein the first
antenna is coupled to one of a phase detector and a voltage-controlled oscillator, so as to output the first signal to the
phase detector or the voltage-controlled oscillator; and

a signal processing unit, coupled to the phase detector and the voltage-controlled oscillator, receiving the first phase output
signal and the second phase output signal, outputting the frequency adjustment signal to the voltage-controlled oscillator
and estimating motion parameters of the target object according to the first phase output signal and the second phase output
signal.

US Pat. No. 9,835,924

SILICON BASED TERAHERTZ FULL WAVE LIQUID CRYSTAL PHASE SHIFTER

National Sun Yat-Sen Univ...

1. A silicon based terahertz full wave liquid crystal phase shifter, comprising:
a first silicon conductive substrate including a first inner surface and a first outer surface opposite to the first inner
surface, wherein the first inner surface includes a first cell portion and a first conductive portion located at a side of
the first cell portion;

a second silicon conductive substrate including a second inner surface facing the first inner surface and a second outer surface
opposite to the second inner surface, wherein the second inner surface includes a second cell portion and a second conductive
located at a side of the second cell portion;

a plurality of pads stacked between the first cell portion and the second cell portion to form a space; and
a liquid crystal filled in the space.

US Pat. No. 9,824,452

TOPOGRAPHICAL MEASUREMENT SYSTEM OF SPECULAR OBJECT AND TOPOGRAPHICAL MEASUREMENT METHOD THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A topographical measurement system for a specular object, comprising:
a screen including a display plane and a fringe pattern, wherein the fringe pattern is displayed on the display plane, the
specular object includes a to-be-measured surface arranged corresponding to the display plane, and the fringe pattern is projected
onto the to-be-measured surface of the specular object to reflect and form a virtual image;

an image capturing device opposite the to-be-measured surface of the specular object for capturing the virtual image; and
an image processing device electrically connected to the image capturing device for calculating a surface profile of the to-be-measured
surface according to the virtual image.

US Pat. No. 9,739,602

METHOD FOR MEASURING THREE-DIMENSIONAL PROFILE OF SPECULAR OBJECT BY FRINGE PROJECTION

NATIONAL SUN YAT-SEN UNIV...

1. A method for measuring a specular object by fringe projection, comprising steps of:
(S1) using a diffusion plane to receive a beam which has a fringe data, and generating a diffusion beam according to a diffusion
effect of the diffusion plane;

(S2) using a hologram to receive a reference beam and the diffusion beam, wherein the reference beam interferes with the diffusion
beam on the hologram to generate a set of interfere fringes exposed on the hologram;

(S3) moving the diffusion plane to add a predetermined distance between the hologram and the diffusion plate;
(S4) repeating the steps (S1) to (S3) at least one time to use at least two set of diffusion beams with different depths to
generate at least two sets of interfere fringes on the hologram;

(S5) developing and fixing the at least two sets of interfere fringes on the hologram to form a diffraction grating;
(S6) arranging the diffraction grating with an image processor, a conjugate light source and an image capture device to form
a fringe projection profilometry;

(S7) providing a conjugate of reference light generated from the conjugate light source to pass through the diffraction grating,
so as to reconstruct a real image, wherein the real image is a fringe image which has a sinusoidal distribution light intensity;
and then projecting the fringe image onto an inspected specular object;

(S8) using the image capture device to capture a diffusion image on the inspected specular object to obtain an image signal;
and

(S9) using the image processor to analyze the image signal, so as to identify the profile of the inspected specular object.

US Pat. No. 9,946,021

METHOD FOR FABRICATING WAVEGUIDE CONSTRUCTION

NATIONAL SUN YAT-SEN UNIV...

1. A method for fabricating a waveguide construction, comprising steps of:providing a layered structure by:
forming a first-type InGaAsP layer on a substrate;
forming a first-type InP layer on the first-type InGaAsP layer;
forming an active layer containing gallium on the first-type InP layer;
forming a second-type InP layer on the active layer; and
forming a second-type InGaAsP layer on the second-type InP layer;
forming an SiO2 patterned layer on the second-type InGaAsP layer, wherein the SiO2 patterned layer comprises a plurality of SiO2 regions, and at least one channel facing toward a desired direction is formed between the SiO2 regions; and
performing a rapid thermal annealing treatment on the layered structure having the SiO2 patterned layer, wherein the rapid thermal annealing treatment has a treating temperature ranged from 720° C. to 760° C. and a treating time ranged from 60 seconds to 240 seconds.

US Pat. No. 9,690,164

ACOUSTO-OPTIC CRYSTAL OPTICAL WAVEGUIDE AND ACOUSTIC WAVE SENSOR HAVING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. An acousto-optic crystal optical waveguide used for transmitting a light beam includes:
an acousto-optic crystal core having an input terminal and an output terminal, wherein the light beam inputs into the input
terminal and outputs from the output terminal, and the light beam transmits through the acousto-optic crystal core in waveguide
propagation modes; and an inner cladding layer covering the acousto-optic crystal core, wherein the acousto-optic crystal
density of the acousto-optic crystal core produces periodic change to make refraction index of the acousto-optic crystal core
produce periodic change to form a grating that makes a light beam with specific wavelength unable to transmit through the
acousto-optic crystal core in waveguide propagation modes and refract to outside of the acousto-optic crystal optical waveguide
from the acousto-optic crystal core to change spectrum of the light beam transmitting through the acousto-optic crystal core
when the acousto-optic crystal optical waveguide is affected by a continuous acoustic wave.

US Pat. No. 10,042,173

LASER INTERFERENCE LITHOGRAPHY SYSTEM WITH FLAT-TOP INTENSITY PROFILE

NATIONAL SUN YAT-SEN UNIV...

1. A laser interference lithography system with flat-top intensity profile comprising:a laser source for emitting a coherent laser beam;
a first beam expander for adjusting the coherent laser beam size;
a refractive beam shaper for converting a Gaussian intensity profile inherent to the coherent laser beam into a flat-top intensity profile and outputting a first collimated laser beam;
a second beam expander for receiving the first collimated laser beam and outputting a second collimated laser beam, wherein the second collimated laser beam is larger in size than the first collimated laser beam;
a sample holder for holding a substrate; and
at least one reflector for receiving and reflecting the second collimated laser beam to form a third collimated laser beam,
wherein the second and third collimated laser beams are transmitted to the substrate at a predetermined angle to produce an interference pattern on the substrate.
US Pat. No. 9,999,658

METHOD FOR TREATING PAIN AND METHOD FOR SCREENING PHARMACEUTICAL COMPOSITIONS HAVING AN ANTI-PAIN EFFECT

NATIONAL SUN YAT-SEN UNIV...

1. A method for treating pain in a subject in need thereof, comprising administering an effective amount of an adenovirus vector to the subject, wherein the adenovirus vector comprises a nucleotide sequence encoding a PTEN protein.

US Pat. No. 9,935,265

RESISTIVE RANDOM ACCESS MEMORY

National Sun Yat-Sen Univ...

1. A resistive random access memory comprising:a resistance changing layer having a first face and a second face opposite to the first face, wherein the resistance changing layer is switchable between a high resistance state and a low resistance state; and
a first electrode layer and a second electrode layer respectively coupled with the first face and the second face of the resistance changing layer, wherein the first electrode layer directly abuts the first face of the resistance changing layer, wherein the second electrode layer directly abuts the second face of the resistance changing layer, wherein each of the first electrode layer and the second electrode layer comprises a doping area containing a heavy element and a non-doping area, wherein the doping area of the first electrode layer is located between the non-doping area of the first electrode layer and the resistance changing layer, wherein the doping area of the second electrode layer is located between the non-doping area of the second electrode layer and the resistance changing layer, wherein the doping area of the first electrode layer directly abuts the first face of the resistance changing layer, wherein the doping area of the second electrode layer directly abuts the second face of the resistance changing layer, and wherein the resistance changing layer is sandwiched between the doping areas of the first electrode layer and the second electrode layer.

US Pat. No. 9,790,199

SULFOXIDE COMPOUND AND METHOD OF PRODUCING BENZOTHIOPHENE DERIVATIVES USING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. A method of producing benzothiophene derivatives, comprising:
performing a reaction between a sulfoxide compound of formula (I) and an alkynyl compound of formula (II) to produce the benzothiophene
derivatives of formula (III):


wherein R1 and R2 are individually and independently benzoyl group; alkyl, acyl or silyl group of C1-C6 straight chain or branched chain; or alkenyl group of C3-C6 straight chain or branched chain; and X is halogen atom;


wherein in the formula (II), A is hydrogen atom or silyl group, and R4 is benzoyl group; alkyl, acyl or silyl group of C1-C6 straight chain or branched chain; or alkenyl group of C3-C6 straight chain or branched chain; and


wherein in the formula (III), R1 and R2 are individually and independently hydrogen atom, benzoyl group; alkyl, acyl, or silyl group of C1-C6 straight chain or branched chain; or alkenyl group of C3-C6 straight chain or branched chain, and R3 is hydrogen atom or (1-piperidinyl)-(C1-C4)alkyl group.

US Pat. No. 9,707,522

SEMI-PERMEABLE MEMBRANE AND A METHOD OF MANUFACTURING THE SEMI-PERMEABLE MEMBRANE THEREOF

National Sun Yat-Sen Univ...

1. A method of manufacturing a semi-permeable membrane comprising:
providing an eggshell membrane;
immersing the eggshell membrane in an aqueous hydrogen peroxide solution with a hydrogen peroxide concentration of 0.35% to
35% for 8 to 144 hours; and

removing the aqueous hydrogen peroxide from the eggshell membrane to obtain the semi-permeable membrane.

US Pat. No. 9,632,951

CACHE MEMORY

National Sun Yat-Sen Univ...

1. A cache memory comprising:
a tag memory array including at least one tag memory;
a data memory array including at least one data memory, with the at least one data memory and the at least one tag memory
together forming at least one cache way;

a control register for separately storing a mode byte, a tag base address, and a data base address, with the mode byte recording
a reconfiguration status of the at least one cache way, with the tag base address being a start address of the tag memory
array, and with the data base address being a start address of the data memory array;

a memory controller electrically connected to the tag memory array, the data memory array, and the control register, with
the memory controller controlling a data access state of the tag memory array according to the mode byte and the tag base
address, and with the memory controller controlling a data access state of the data memory array according to the mode byte
and the data base address; and

a selection module electrically connected between the tag memory array, the data memory array, and the memory controller,
with the selection module permitting the memory controller to control the tag memory array and the data memory array to access
data,

with the memory controller including a tag draft controller and a data draft controller, with the tag draft controller electrically
connected to the tag memory array, the control register, the selection module, a cache address port, and a cache data write-in
port, and with the data draft controller electrically connected to the data memory array, the control register, the selection
module, the cache address port, and the cache data write-in port, with the tag draft controller including a tag comparator,
with the tag comparator connected to the cache address port and the tag base address with the data draft controller including
a data comparator connected to the cache address port and the data base address.

US Pat. No. 9,563,015

OPTICAL WAVEGUIDE STRUCTURE AND MANUFACTURING METHOD THEREOF

National Sun Yat-sen Univ...

1. An optical waveguide structure, comprising:
a first waveguide layer having a taper portion, a connecting portion, and a strip portion, wherein the connecting portion
is disposed between the taper portion and the strip portion;

a second waveguide layer; and
a binding layer disposed between the first waveguide layer and the second waveguide layer;
wherein the first waveguide layer is configured to couple a light beam through the taper portion and the connecting portion
to the strip portion; and the taper portion has a length ranged from 20 to 30 microns and a width gradually broadened from
0.3 microns to 0.5 microns.

US Pat. No. 9,620,211

MAINTAINING DEVICE, MAINTENANCE METHOD, COMPUTER PROGRAM PRODUCT, AND COMPUTER READABLE MEDIUM

National Sun Yat-Sen Univ...

1. A maintaining device for maintaining the normal operation of a resistive random access memory, wherein the resistive random
access memory comprises a first electrode and a second electrode, wherein the first electrode is not grounded, wherein the
maintaining device is adapted to output an operational signal and a restoring signal to the first electrode of the resistive
random access memory, wherein the maintaining device comprises:
a signal generation module;
a calculation module coupled with the signal generation module, wherein the calculation module controls the signal generation
module to generate the operational signal based on a command, and controls the operational signal to transit from a zero voltage
to a non-zero voltage and then back to the zero voltage during a period of operational time, wherein the calculation module
determines whether the operational signal has already transited from the non-zero voltage back to the zero voltage, wherein,
if the determined result is positive, the calculation module controls the signal generation module to generate the restoring
signal based on a restoring command, controls the restoring signal to transit from the zero voltage to a negative voltage,
controls the restoring signal to remain the negative voltage for a period of restoring time, and then controls the restoring
signal to transit from the negative voltage back to the zero voltage, wherein, if the determined result is negative, the calculation
module keeps monitoring a voltage level of the operational signal.

US Pat. No. 9,647,020

LIGHT SENSING CIRCUIT AND CONTROL METHOD THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A light sensing circuit, comprising:
a photo transistor having a gate, a drain and a source;
a first transistor electrically connecting between the gate and the source of the photo transistor;
a first capacitor electrically connecting between the gate and the drain of the photo transistor;
a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal;
a second capacitor electrically connecting between the source of the photo transistor and a ground contact;
a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and
a switch adapted to alternatively connect the third transistor with a buffer or a zero signal;
wherein a bias situation of the photo transistor is controlled by a negative voltage signal, the first transistor is turned
on or off by a first signal, the second transistor is turned on or off by a second signal, and the third transistor is turned
on or off by a third signal, so that the buffer outputs a light sensing signal generated by the photo transistor.

US Pat. No. 10,001,515

PHASE SHIFT DETECTOR

NATIONAL SUN YAT-SEN UNIV...

1. A phase shift detector comprising:a comparator including:
a first-stage circuit with a first input end and a second input end,
a second-stage circuit electrically connected to the first-stage circuit and including a first-controlled and a second-controlled transistors and outputting a first and a second output voltages, and
a third-stage circuit electrically connected to the second-stage circuit and which outputs a reference output voltage; and
an offset calibration circuit electrically connected to the comparator and receiving the first output voltage, the second output voltage and the reference output voltage, wherein the offset calibration circuit outputs a first bulk voltage and a second bulk voltage to the first-controlled transistor and the second-controlled transistor respectively according to the first output voltage, the second output voltage and the reference output voltage for controlling a threshold voltage of the first-controlled transistor or the second-controlled transistor and wherein the first-controlled and second-controlled transistors are the only transistors in the comparator that are controlled by the offset calibration circuit.

US Pat. No. 9,783,642

DIFUNCTIONAL POLYHEDRAL OLIGOMERIC SILSESQUIOXANE DERIVATIVE AND SYNTHESIS THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A difunctional polyhedral oligomeric silsesquioxane derivative represented by following formula (I):

wherein R is selected from one of
and

US Pat. No. 9,751,852

SULFOXIDE COMPOUND AND METHOD OF PRODUCING BENZOTHIOPHENE DERIVATIVES USING THE SAME

NATIONAL SUN YAT-SEN UNIV...

1. A sulfoxide compound of formula (I)

wherein R1 and R2 are individually and independently benzoyl group; alkyl, acyl or silyl group of C1-C6 straight chain or branched chain; or alkenyl group of C3-C6 straight chain or branched chain; and X is halogen atom.

US Pat. No. 9,907,763

METHOD OF TREATING OR PREVENTING THE VISUAL FUNCTION LOSS BY USING 4-(PHENYLSULFANYL)BUTANE-2-ONE (4-PSB-2)

NATIONAL SUN YAT-SEN UNIV...

1. A method of treating the visual function loss in optic nerve in a subject after optic nerve crush injury, comprising administering
a pharmaceutical composition to the subject, wherein the composition comprises 4-(Phenylsulfanyl)butane-2-one (4-PSB-2), and
pharmaceutically acceptable carrier, wherein the 4-PSB-2 comprises formula I

US Pat. No. 9,711,720

RESISTIVE RANDOM ACCESS MEMORY HAVING STABLE FORMING VOLTAGE

National Sun Yat-Sen Univ...

1. A resistive random access memory, comprising:
a first electrode having a mounting face;
a separating medium having a first face in contact with the mounting face of the first electrode, a second face opposite to
the first face, and an inner face extending between the first and second faces, wherein the separating medium forms a through
hole extending from the first face to the second face, wherein a part of the mounting face of the first electrode is not covered
by the separating medium, and wherein the separating medium has a first dielectric;

a resistance changing layer extending along the part of the mounting face of the first electrode as well as the inner face
and the second face of the separating medium, wherein the resistance changing layer has a second dielectric having a dielectric
constant smaller than a dielectric constant of the first dielectric; and

a second electrode arranged on the resistance changing layer,
wherein the separating medium further comprises a third dielectric having a dielectric constant different from the dielectric
constant of the first dielectric, wherein the first and third dielectrics have different distribution regions, and wherein
both the first and third dielectrics adjoin the resistance changing layer.

US Pat. No. 9,958,262

SYSTEM FOR MEASURING THREE-DIMENSIONAL PROFILE OF TRANSPARENT OBJECT OR REFRACTIVE INDEX BY FRINGE PROJECTION

NATIONAL SUN YAT-SEN UNIV...

1. A system for measuring a transparent object by fringe projection, measuring a profile or refractive index of an inspected transparent object, the system comprising:a long depth of focus (DO) image generating device configured to generate a long DOF image,
wherein the long DOF image is emitted into the inspected transparent object;
wherein the long DOF image is generated from a fringe image which has a sinusoidal distribution penetration ratio when the long DOF image is emitted into the inspected transparent object; and
wherein the long DOF image generating device comprises:
a two-dimensional amplitude grating;
a light source configured to illuminate the two-dimensional amplitude grating, to generate a two-dimensional fringe image; and
a wide-angle lens configured to receive the two-dimensional fringe image passing therethrough and generate the long DOF image;
an image, capture device configured to receive a distorted image which is generated by the long DOF image emitted into the inspected transparent object and then refracted by the inspected transparent object; and
an image processor electrically connected to the image capture device, wherein the image processor pre-stores the long DOF image, wherein the image processor analyzes the distorted image and compares the distorted image with the long DOF image, to identify the profile or refractive index of the inspected transparent object.

US Pat. No. 9,748,594

POLYMER OF FLUORINE-CONTAINING SULFONATED POLY(ARYLENE ETHER)S AND METHOD OF MANUFACTURING THE SAME

National Sun Yat-sen Univ...

1. A method of manufacturing a polymer of fluorine-containing sulfonated poly(arylene ether)s, comprising steps of:
(S01) providing a fluorine-containing monomer having a structure given in the following formula (I):

wherein X is

D1 is halogen or hydroxyl group; and Z is independently selected from fluoro- or trifluoromethyl group;
(S02) providing a multi-phenyl monomer having a structure given in the following formula (II):
D2-Y-D2  (II)
wherein Y is


and D2 is halogen or hydroxyl group;
(S03) processing a nucleophilic polycondensation between the fluorine-containing monomer and the multi-phenyl monomer to form
a polymer of fluorine-containing poly(arylene ether)s having a structure given in the following formula (III):


wherein n is an integer greater than or equal to 2; and D2 is the hydroxyl group if D1 is the halogen group, or D2 is the
halogen group if D1 is the hydroxyl group; and

(S04) carrying out a sulfonation modification of the polymer of fluorine-containing poly(arylene ether)s to form a polymer
of fluorine-containing sulfonated poly(arylene ether)s having a molecular formula given in the following formula (1):


wherein j is an integer from 1 to 10.

US Pat. No. 9,713,602

METHOD FOR FACILITATING THE OXYGEN RELEASE OF HEMOGLOBIN-BASED BLOOD SUBSTITUTES

NATIONAL SUN YAT-SEN UNIV...

1. A method for increasing oxygen transport function of a hemoglobin-based blood substitute, comprising administering a phthalide
compound to a subject in need thereof, wherein the phthalide compound increases oxygen release efficiency of the hemoglobin-based
blood substitute, wherein the phthalide compound is selected from the group consisting of Z-butylidenephthalide, Z-ligustilide,
senkyunolide A, senkyunolide H, senkyunolide I, senkyunolide F, E-butylidenephthalide, E-ligustilide, 3-butylphthalide, 3-butylidene-4-hydrophthalide,
6,7-dihydroxligustilide and 6,7-epoxyligustilide.

US Pat. No. 10,094,048

METHOD OF PRODUCING DOUBLE-DOPED SCINTILLATION CRYSTAL

NATIONAL SUN YAT-SEN UNIV...

1. A method of producing a double-doped scintillation crystal, comprising steps of:(A) growing a double-doped single crystal boule by Czochralski method, wherein said double-doped single crystal boule has a diameter of 70 mm and a length of 200 mm, said double-doped single crystal boule is a single crystal boule having general formula (I) or (II), and tetravalent cerium (Ce4+) become trivalent cerium (Ce3+) by charge compensation,
Cax+Cey:Lu2?x?y?zYzSiO5   (I)
Mgx+Cey:Lu2?x?y?zYzSiO5   (II)
in the general formula (I) and (II), x is 0.003, y is more than 0.001 to less than 0.1, and z is equal to or greater than 0.05 to less than 1.898; and
(B) performing a thermal annealing process by placing the double-doped single crystal boule in a furnace, so as to form said double-doped scintillation crystal boule, wherein said thermal annealing process comprises:
a heating step, wherein the double-doped single crystal boule is heated from a room temperature to a temperature of 1400° C. ˜1600° C. in 480 minutes (mins)˜600 mins;
a temperature-sustaining step, wherein said temperature is maintained at 1400° C. ˜1600° C. for 50 hours (hrs)˜200 hrs and
a cooling step, wherein said double-doped single crystal boule is cooled down from 1400° C.˜1600° C. to a room temperature in 480 mins ˜720 mins.

US Pat. No. 10,344,397

III-NITRIDE EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

National Sun Yat-Sen Univ...

1. An III-nitride epitaxial structure comprising:a gallium nitride layer comprising a M-plane gallium nitride and a c-plane gallium nitride, wherein the M-plane gallium nitride surrounds the c-plane gallium nitride;
an indium gallium nitride layer arranged on the gallium nitride layer, wherein the indium gallium nitride layer comprises a M-plane indium gallium nitride and a c-plane indium gallium nitride, wherein the M-plane indium gallium nitride surrounds the c-plane indium gallium nitride; and
an indium nitride layer arranged on the indium gallium nitride layer, wherein the indium nitride layer comprises a M-plane indium nitride and a c-plane indium nitride, wherein the M-plane indium nitride surrounds the c-plane indium nitride;
wherein the c-plane gallium nitride, the c-plane indium gallium nitride, and the c-plane indium nitride are stacked each other to form a neck portion, wherein the neck portion is connected to a thin c-plane indium nitride disk, and the thin c-plane indium nitride disk is spaced from the M-plane indium nitride by a gap.

US Pat. No. 10,299,020

METHOD AND APPARATUS FOR SIGNAL PROCESSING BY LIGHT WAVEFORM SHAPING

National Sun Yat-Sen Univ...

1. A method for signal processing by light waveform shaping, wherein the method is used to process an uplink signal generated by a first digital-to-analog converter (DAC) for uplink transmission to a second digital-to-analog converter (DAC) having a higher sampling rate than the first DAC, and process a downlink signal to be transmitted upon downlink transmission to an a first analog-to-digital converter (ADC) from a second analog-to-digital converter having a higher sampling rate than the first ADC, the method comprisingadjustably shaping a waveform of a light pulse signal component of the uplink signal by an optical modulation in amplitude of a light pulse source for the uplink signal, the light pulse source defining a higher frequency than the shaped waveform of the light pulse signal component, the uplink signal thereby preserving a high-frequency image content of the light pulse source and a lower frequency waveform of the light pulse signal component; and
adjustably shaping a waveform of a light pulse signal component of the downlink signal by optical gating in amplitude of a light pulse source for the downlink signal, the light pulse source defining a higher frequency than the shaped waveform of the light pulse signal component, the downlink signal thereby preserving a high-frequency content of the light pulse source and a lower frequency waveform of the light pulse signal-component.

US Pat. No. 10,146,098

TRANSPARENT DISPLAY DEVICE

NATIONAL SUN YAT-SEN UNIV...

1. A transparent display device, comprising:a first liquid crystal layer comprising a first electrode, a second electrode, a plurality of first liquid crystal molecules, and a plurality of first chiral molecules, wherein the first liquid crystal molecules and the first chiral molecules are disposed between the first electrode and the second electrode; and
a second liquid crystal layer disposed on one side of the first liquid crystal layer, wherein the second liquid crystal layer comprises a third electrode, a fourth electrode, a plurality of second liquid crystal molecules, a plurality of second chiral molecules, and a dichroic dye, and the second liquid crystal molecules, the second chiral molecules, and the dichroic dye are disposed between the third electrode and the fourth electrode;
wherein the first chiral molecules and the first liquid crystal molecules form a plurality of first cholesteric liquid crystals; the second chiral molecules and the second liquid crystal molecules form a plurality of second cholesteric liquid crystals;
the first liquid crystal molecules and the second liquid crystal molecules both have positive anisotropies, the dichroic dye has a visible absorption wavelength ranged between 400 to 780 nm;
wherein the first chiral molecules and the second chiral molecules are independently selected from a group consisting of

US Pat. No. 10,381,508

LIGHT EMITTING ELEMENT WITH AN ENHANCED ELECTROLUMINESCENCE EFFECT

NATIONAL SUN YAT-SEN UNIV...

1. A light emitting element with an enhanced electroluminescence effect, comprising:a gallium nitride layer having a mounting face, wherein the gallium nitride layer grows in [0001] direction of a four-axis coordinate system, wherein an end of the mounting face of the gallium nitride layer is terminated with nitrogen elements;
a gallium nitride pyramid having a larger end face and a smaller end face, wherein the gallium nitride pyramid grows in [0001] direction of the four-axis coordinate system, wherein an end of the larger end face of the gallium nitride pyramid is terminated with gallium elements, wherein the larger end face of the gallium nitride pyramid contacts with the mounting face of the gallium nitride layer, with a c-axis of the gallium nitride layer coaxial with a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, wherein broken bonds at the larger end face of the gallium nitride pyramid and the mounting face of the gallium nitride layer weld together, wherein nitrogen elements of the end of the mounting face bond to gallium elements of the end of the larger end face, wherein the gallium nitride layer is a p-type semiconductor and the gallium nitride pyramid is an n-type semiconductor;
an insulating layer covering surfaces of the gallium nitride layer and the gallium nitride pyramid, wherein a portion of the gallium nitride pyramid is not covered by the insulating layer to form an electrically conductive portion of the gallium nitride pyramid, and a portion of the gallium nitride layer is not covered by the insulating layer to form another electrically conductive portion of the gallium nitride layer;
a first electrode electrically connecting to the electrically conductive portion of the gallium nitride pyramid; and
a second electrode electrically connecting to the electrically conductive portion of the gallium nitride layer,
wherein a top of the gallium nitride pyramid is truncated and flush with a surface of insulating layer.

US Pat. No. 10,224,879

PEAK DETECTOR AND OPERATIONAL AMPLIFIER CIRCUIT THEREIN

NATIONAL SUN YAT-SEN UNIV...

1. A peak detector comprising:an operational amplifier circuit including a first chopper, a transconductance amplifier, a second chopper and a low pass filter, the transconductance amplifier is electrically connected with the first and second choppers, and the low pass filter is electrically connected with the second chopper, wherein the second chopper is configured to modulate a offset voltage of the transconductance amplifier to higher frequency, and the low pass filter is configured to filter out the offset voltage with higher frequency;
a charge transistor electrically connected with the low pass filter of the operational amplifier circuit, wherein turning on or turning off the charge transistor is determined by a output signal of the low pass filter; and
a charge capacitor electrically connected with the charge transistor and the operational amplifier circuit, wherein when the charge transistor is turned on, the charge capacitor is charged for detecting a peak of a input voltage signal.

US Pat. No. 10,218,145

VORTEX LASER GENERATION DEVICE IN DEGENERATE CAVITY WITH SPIRAL PHASE ELEMENT AND VORTEX LASER GENERATION METHOD

NATIONAL SUN YAT-SEN UNIV...

1. A vortex laser generation device in a degenerate cavity with a spiral phase element, comprising:a degenerate cavity, including:
a resonator mirror configured to receive a pump beam;
a gain medium disposed behind the resonator mirror;
an optical element configured to break an azimuthal symmetry of lasers and be disposed behind the gain medium; and
an output coupler disposed behind the optical element;
wherein the pump beam is emitted into the gain medium through the resonator mirror so that the gain medium absorbs the pump beam to generate the lasers, and then the lasers pass through the optical element and reflect between the resonator mirror and the output coupler for thus being a multiple pass transverse mode to form vortex lasers, and the vortex lasers are output by transmitting through the output coupler.

US Pat. No. 10,601,132

ACTIVE PHASE SWITCHABLE ARRAY

NATIONAL SUN YAT-SEN UNIV...

1. A active phase switchable array comprising:a plurality of antenna elements each including an antenna, a power coupling network and an injection-locked oscillator (ILO), wherein the power coupling network is coupled to the antenna and the ILO, an output signal output from the ILO is configured to transmit to the antenna through the power coupling network, and the antenna is configured to radiate the output signal to a subject, wherein a reflected signal reflected from the subject is received by the antenna and transmitted to the ILO through the power coupling network to allow the ILO to operate in a self-injection-locked state, and wherein the power coupling network of one of the antenna elements is coupled to the power coupling network of another of the antenna elements, and the output signal from the ILO of the another of the antenna elements is transmitted to the ILO of the antenna element through the power coupling networks to allow the ILOs to operate in a mutual-injection-locked state; and
a bias circuit configured to output a plurality of modulation voltages, wherein the modulation voltages are respectively transmitted to the ILO of each of the antenna elements to control a free-running frequency of each of the ILOs, and a plurality of wireless signals radiated from the antennas are configured to form a direction adjustable beam.

US Pat. No. 10,506,981

VITAL SIGN DETECTION SYSTEM WITH RANDOM BODY MOVEMENT CANCELLATION

NATIONAL SUN YAT-SEN UNIV...

1. A vital sign detection system comprising:a radar device configured to output an output signal;
a nonreciprocal network coupled to the radar device;
a first antenna coupled to the nonreciprocal network; and
a second antenna coupled to the nonreciprocal network;
wherein the output signal from the radar device is configured to be delivered to the first antenna via the nonreciprocal network and then transmitted to a first side of a biological subject via the first antenna, and a first reflection signal from the first side of the biological subject is received by the first antenna and configured to be delivered to the second antenna via the nonreciprocal network and then transmitted to a second side of the biological subject via the second antenna, and a second reflection signal from the second side of the biological subject is received by the second antenna and configured to be delivered to the radar device via the nonreciprocal network.

US Pat. No. 10,274,471

GAS DETECTION MODULE AND GAS SENSOR THEREOF

NATIONAL SUN YAT-SEN UNIV...

1. A gas detection module comprising:a gas sensor having a substrate, a gate, an insulating layer, an active layer, a source and a drain, wherein the gate is disposed on the substrate, wherein the insulating layer is disposed on the gate and the substrate, wherein the active layer is disposed on the insulating layer, wherein each of the source and the drain is partially arranged on the active layer and extends to the insulating layer, and wherein the active layer is exposed from between the source and the drain; and
a detection circuit comprising an operational amplifier, a resistor and an electrical sensor, wherein the operational amplifier comprises two input ends and an output end, wherein a first one of the two input ends is electrically connected to a ground end, wherein a second one of the two input ends is electrically connected to the source of the gas sensor, wherein the second one of the two input ends is electrically connected to the output end via the resistor, and wherein the electrical sensor is electrically connected between the output end and the ground end.

US Pat. No. 10,772,210

SOLUTION PROPERTY SENSOR

National Sun Yat-sen Univ...

1. A solution property sensor, comprising:a substrate having a front surface and a back surface, wherein the substrate defines a temperature sensing region, an electrical conductivity sensing region, a pH value sensing region, and an electrical signal output region, wherein the substrate includes:
a plurality of conductive patterns disposed on the front surface or the back surface of the substrate, wherein the conductive patterns are electrically isolated with each other and include two temperature conductive wires, at least two electrical conductivity conductive wires, a pH value conductive wire, and a reference electrode conductive wire, wherein the conductive patterns further comprises a pH value conductive pattern electrically connected to the pH value conductive wire and disposed on the front surface or the back surface of the substrate; and
a plurality of electrical connection pins disposed on the electrical signal output region and electrically connected to the conductive patterns, respectively;
a temperature sensing element disposed on the temperature sensing region and electrically connected to the two temperature conductive wires;
an electrical conductivity sensing element disposed on the electrical conductivity sensing region and electrically connected to the at least two electrical conductivity conductive wires;
a pH value sensing element disposed on the pH value sensing region and electrically connected to the pH value conductive wire, wherein a material of the pH value sensing element includes indium tin oxide, and the pH value sensing element has a sensing surface formed of indium tin oxide and configured to sense a pH value of a solution, wherein the pH value sensing element is a rectangular plate member, wherein the pH value sensing element is electrically connected to the pH value conductive pattern, wherein a width of the pH value conductive pattern is substantially a width of the rectangular plate member, and a length of the pH value conductive pattern is 10% to 50% of a length of the rectangular plate; and
a reference electrode disposed on the substrate and electrically connected to the reference electrode conductive wire.

US Pat. No. 10,626,234

METHOD FOR FABRICATING SOLID PHOTONIC CRYSTALS

NATIONAL SUN YAT-SEN UNIV...

1. A method for fabricating solid photonic crystals comprising:preparing a copolymer solution by dissolving a polystyrene-block-polyvinylpyridine (PS-PVP) copolymer in a chloride-containing solvent;
casting the copolymer solution on a substrate to form an initial film, the PS-PVP copolymer self-assembles into 3D periodic network structures having a periodicity corresponding to non-visible wavelengths in the initial film;
swelling the initial film, the initial film is soaked in a polar solvent to swell the PS-PVP copolymer such that the initial film becomes a solvated film, wherein the periodicity of the 3D network structures in the solvated film is higher than that in the initial film; and
drying the solvated film, the solvated film becomes a solid photonic crystal when the polar solvent is evaporated completely, wherein PVP blocks in the PS-PVP copolymer become glassy during evaporation of the polar solvent such that the periodicity of the 3D network structures in the solid photonic crystal is preserved between that in the initial film and the solvated film such that the periodicity of the 3D network structures is between 300 nm and 700 nm in the solid photonic crystal.

US Pat. No. 10,574,142

DC-DC BUCK CONVERTER

NATIONAL SUN YAT-SEN UNIV...

1. A DC-DC buck converter comprising:a buck conversion circuit including a switching circuit and a LC circuit, the switching circuit includes a plurality of upper switching elements and a plurality of lower switching elements, the upper switching elements are electrically connected to the lower switching elements, the LC circuit is electrically connected to the switching circuit and configured to output an output voltage;
a PWM control circuit coupled to the buck conversion circuit, the PWM control circuit is configured to generate a control signal which is provided to control the upper and lower switching elements; and
a light-load control circuit coupled to the PWM control circuit and the buck conversion circuit, the light-load control circuit is configured to receive the output voltage, the control signal, and a light-load threshold value and determine whether the DC-DC buck converter is in a light load state according to the output voltage and the light-load threshold value, wherein when the DC-DC buck converter is in the light load state, the light-load circuit is configured to turn off at least one of the upper switching elements and at least one of the lower switching elements so as to inhibit the at least one turned-off upper and at least one turned-off lower switching elements from operating in buck conversion.

US Pat. No. 10,281,561

QUADRATURE SELF-INJECTION-LOCKED RADAR

NATIONAL SUN YAT-SEN UNIV...

1. A quadrature self-injection-locked radar comprising:a self-injection-locked (SIL) loop including a voltage-controlled oscillator (VCO), a phase shifter and a transceiver antenna, wherein the VCO outputs an oscillation signal, the phase shifter adjusts a phase of the oscillation signal to operate in two phase modes, and the transceiver antenna radiates the oscillation signal to a subject, wherein the oscillation signal reflected from the subject is received by the transceiver antenna and transmitted to the VCO for bringing the VCO to a self-injection-locked (SIL) state to generate a first self-injection-locked (SIL) signal and a second self-injection-locked (SIL) signal;
a frequency demodulator for receiving the first and second SIL signals, wherein the frequency demodulator demodulates the first and second SIL signals in frequency to obtain a first frequency demodulation signal and a second frequency demodulation signal; and
a signal processor for receiving and computing the first and second frequency demodulation signals to obtain a displacement signal of the subject.

US Pat. No. 10,605,023

AUTOMATIC PUSH CORER SYSTEM

NATIONAL SUN YAT-SEN UNIV...

1. An automatic push corer system comprising:a base;
a power group, disposed on the base, the power group having a rotating shaft and a motor, the rotating shaft coupled to the motor;
a Geneva transmission group, disposed on the base, the Geneva transmission group having a driving member and a driven member, the driving member coupled to the rotating shaft of the power group, the driven member coupled to the driving member, the driving member configured to control the driven member to perform a first intermittent rotary motion;
an intermittent transmission group, disposed on the base, the intermittent transmission group having a first transmission member and a second transmission member, the first transmission member coupled to the rotating shaft of the power group, and the second transmission member coupled to the first transmission member, the first transmission member configured to cooperate with the second transmission member to perform a second intermittent rotary motion;
a vertical coring transmission group, disposed on the base, the vertical coring transmission group having a third transmission member, a fourth transmission member, and a fifth transmission member, the third transmission member coupled to the second transmission member of the intermittent transmission group, and the third transmission member coupled to the fourth transmission member and the fifth transmission member, the third transmission member configured to cooperate with the second intermittent rotary motion of the intermittent transmission group to control the fourth transmission member and the fifth transmission member to perform a third intermittent rotary motion;
a clamp group, coupled to the fourth transmission member and the fifth transmission member of the vertical coring transmission group, the clamp group configured to cooperate with the third intermittent rotary motion of the vertical coring transmission group to perform a lifting reciprocation; and
a coring group, coupled to the driven member of the Geneva transmission group, the coring group having a plurality of coring tubes, the coring group configured to cooperate with the first intermittent rotary motion of the driven member, and cooperate with the lifting reciprocation of the clamp group, to respectively complete a coring operation and a tubing replacing operation.

US Pat. No. 10,705,366

METHOD FOR FABRICATING MICRO-CELL STRUCTURES

NATIONAL SUN YAT-SEN UNIV...

1. A method for fabricating micro-cell structures, comprising steps of: providing a liquid crystal mixture comprising: 15 wt % to 91 wt % of a negative type liquid crystal material; 0.0001 wt % to 5 wt % of a salt ionic material; 3 wt % to 40 wt % of a chiral molecule material; and 5 wt % to 40 wt % of a photocurable adhesive material; performing a heating step on the liquid crystal mixture at a temperature ranging from 40° C. to 150° C.; performing a heat induced phase separation step on the liquid crystal mixture at a thermal phase separation temperature for a thermal phase separation time such that the liquid crystal mixture forms a plurality of liquid crystal particles and a network photo-curing adhesive, wherein the thermal phase separation temperature and the thermal phase separation time are determined by a changing rate of a percentage of an area of the liquid crystal mixture that contains light transmitting liquid crystal material; and performing a photo-curing step on the liquid crystal mixture by emitting an ultraviolet light so that the liquid crystal particles and the network photo-curing adhesive further form a plurality of micro-cell structures.

US Pat. No. 10,679,043

3-D PATH DETECTION SYSTEM FOR HAND GESTURE RECOGNITION APPLICATION

NATIONAL SUN YAT-SEN UNIV...

1. A 3-D path detection system comprising:an image capture device configured to produce a dynamic image, wherein the dynamic image involves a moving object image, and the image capture device is configured to calculate an x-direction (transverse horizontal) pixel-value displacement and a y-direction (transverse vertical) pixel-value displacement of the moving object image;
a radar device configured to transmit an input wireless signal to a moving object, receive a reflection signal from the moving object and obtain a z-direction (longitudinal) displacement of the moving object according to a Doppler shift in the reflection signal; and
a computing module coupled to the image capture device and the radar device, wherein the computing module is configured to perform a calibration procedure to convert the x- and y-direction pixel-value displacements into a x-direction displacement and a y-direction displacement by relating to the z-direction displacement, and the computing module is configured to construct a 3-D path of the moving object by using the x- and z-direction displacements of the moving object;
wherein the calibration procedure is: the moving object moves along a straight path in the xz plane with a first angle relative to x-axis and then moves along a straight path in the yz plane with a second angle relative to y-axis, and the first and second angles are the predetermined angles, wherein according to the x- and y-direction pixel-value displacements of the moving object image and the z-direction displacement of the moving object, the computing module is configured to calculate a first conversion coefficient from the x-direction pixel-value displacement of the moving object image to an x-direction displacement of the moving object and calculate a second conversion coefficient from the y-direction pixel-value displacement of the moving object image to a y-direction displacement of the moving object, and the calculation formulas of the first and second conversion coefficients are represented as follows:

wherein mx is the first conversion coefficient, ?z is the z-direction displacement of the moving object, ?Px is the x-direction pixel-value displacement of the moving object image, ?x is the first angle, ?x is the x-direction displacement of the moving object, my is the second conversion coefficient, ?Py is the y-direction pixel-value displacement of the moving object image, ?y is the second angle, and ?y is the y-direction displacement of the moving object.

US Pat. No. 10,461,252

RESISTIVE RANDOM ACCESS MEMORY

National Sun Yat-Sen Univ...

1. A resistive random access memory comprising:a first electrode;
a second electrode separate from the first electrode;
an enclosing layer forming a first via-hole; and
an oxygen-containing resistance changing layer arranged for the first via-hole, wherein the first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer, wherein each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen, wherein each of the first electrode, the second electrode and the enclosing layer abuts with the oxygen-containing resistance changing layer, wherein the enclosing layer is mounted on one of the first and second electrodes, and
wherein the oxygen-containing resistance changing layer is formed from oxides doped with chlorine and is completely located in the first via-hole, wherein the first electrode is not parallel to the second electrode, wherein the enclosing layer encloses the first electrode but does not enclose the second electrode, and wherein the enclosing layer is in contact with a bottom face of the second electrode.

US Pat. No. 10,413,210

NON-CONTACT VITAL SIGN MONITORING SYSTEM

NATIONAL SUN YAT-SEN UNIV...

1. A non-contact vital sign monitoring system comprising:a first radar device for generating a first transmission signal;
a first antenna for transmitting the first transmission signal to a side of a subject, wherein the first antenna has a first gain value;
a second radar device for generating a second transmission signal; and
a second antenna for transmitting the second transmission signal to the same side of the subject, wherein the second antenna has a second gain value, and the first gain value is higher than the second gain value, wherein a first reflected signal and a second reflected signal are reflected from the subject after the first transmission signal and the second transmission signal are transmitted to the subject, the first reflected signal and the second reflected signal are both received by the first antenna and the second antenna and both delivered to the first radar device and the second radar device and, accordingly, the first radar device and the second radar device operate in a self- and mutual-injection locking state.
US Pat. No. 10,702,845

REACTION METHOD WITH HOMOGENEOUS-PHASE SUPERCRITICAL FLUID

NATIONAL SUN YAT-SEN UNIV...

1. A reaction method with a homogeneous-phase supercritical fluid, comprising:introducing a first fluid into a mixing chamber containing a molecular sieve component, wherein a mass of the first fluid into the mixing chamber is less than or equal to that can be absorbed by the molecular sieve component, totally absorbing the first fluid by the molecular sieve component;
introducing a second fluid into the mixing chamber, wherein a mass of the second fluid into the mixing chamber is greater than that can be absorbed by the molecular sieve component;
adjusting a temperature and a pressure in the mixing chamber to a critical temperature and a critical pressure of the second fluid, respectively, releasing the first fluid in supercritical phase from the molecular sieve component into the mixing chamber, followed by homogeneously mixing with the second fluid in supercritical phase in the mixing chamber to obtain a homogeneous-phase mixing fluid; and
introducing the homogeneous-phase mixing fluid into a reaction chamber connected to the mixing chamber for conducting a reaction.