1. A method of forming a quantum dot (QD), the method comprising:forming a zinc chalcogenide molecular cluster compound in situ from a zinc precursor and a chalcogen precursor; and
growing a semiconductor core in the presence of the zinc chalcogenide molecular cluster compound from a group III precursor and a group V precursor by
heating a mixture comprising the group III precursor, the group V precursor, the zinc precursor and the chalcogen precursor at a first temperature sufficient to dissolve the group III precursor, the group V precursor, the zinc precursor and the chalcogen precursor, and
heating the mixture to a second temperature sufficient to initiate growth of a QD core, wherein
the zinc precursor is zinc acetate or zinc stearate,
the chalcogen precursor is 1-dodecanethiol, thiophenol or 1-octane selenol,
the group III precursor comprises a phosphine, an alkyl, an aryl, an acetate, an acetylacetonate, a carbonate, a beta-diketonate, an oxide, or a nitrate.