US Pat. No. 9,193,963

MUTANT ENDOGLUCANASE

Toray Industries, Inc., ...

1. A mutant endoglucanase comprising an amino acid sequence that has 90% or more sequence identity with an amino acid sequence
selected from the group consisting of SEQ ID NO: 1, 7, 13, 19, 25, 31, and 37, wherein said mutant endoglucanase amino acid
sequence has an amino acid residue corresponding to the 273rd tryptophan in the amino acid sequence of SEQ ID NO: 1 substituted
with an amino acid selected from amino acids other than aromatic amino acids and wherein said mutant endoglucanase possesses
endoglucanase activity.

US Pat. No. 9,184,230

SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR

FUJI ELECTRIC CO., LTD., ...

1. A silicon carbide vertical field effect transistor comprising:
a first-conductive-type silicon carbide substrate;
a low-concentration first-conductive-type silicon carbide layer formed on a surface of the first-conductive-type silicon carbide
substrate;

second-conductive-type regions selectively formed on a surface of the low-concentration first-conductive-type silicon carbide
layer;

first-conductive-type source regions formed in the second-conductive-type regions;
a high-concentration second-conductive-type region formed between the first-conductive-type source regions on the second-conductive-type
region;

a source electrode electrically connected directly to the high-concentration second-conductive-type region and a first-conductive-type
source region among the first-conductive-type source regions;

a gate insulating film formed from a first first-conductive-type source region to an adjacent second first-conductive-type
source region of the first-conductive-type source regions and over a respective first second-conductive-type region and a
respective second second-conductive-type region of the second-conductive-type regions and over the first-conductive-type silicon
carbide layer;

a gate electrode formed on the gate insulating film;
a drain electrode on a back side of the first-conductive-type silicon carbide substrate, wherein
a second high-concentration second-conductive-type region is disposed between the first-conductive-type silicon carbide layer
and each of the second-conductive-type regions;

a width of the second high-concentration second-conductive-type region is smaller than that of the second-conductive-type
regions; and,

the second high-concentration second-conductive-type region overlaps the high-concentration second-conductive-type region.

US Pat. No. 9,217,195

AMORPHOUS CARBON FILM AND METHOD FOR FORMING SAME

NTN CORPORATION, Osaka (...

1. A method for forming an amorphous carbon film under a low vacuum by using a power source for a bipolar-type plasma-based
ion implantation apparatus, wherein a power source side electrode connected to said power source for said plasma-based ion
implantation apparatus and a grounding side electrode opposed to said power source side electrode are provided inside a chamber;
a base material is disposed on one of said power source side electrode and said grounding side electrode; a degree of vacuum
inside said chamber is set to 1000 to 30000 Pa; and plasma of a noble gas and that of a hydrocarbon-based gas are generated
between said base material and said electrode where said base material is not disposed to form said amorphous carbon film
on a surface of said base material.

US Pat. No. 9,059,065

METHOD OF VARYING GAIN OF AMPLIFYING PHOTOELECTRIC CONVERSION DEVICE AND VARIABLE GAIN PHOTOELECTRIC CONVERSION DEVICE

National Institute of Adv...

1. A method of varying gain of an amplifying photoelectric conversion device which includes: an amplifying photoelectric conversion
part including a photoelectric conversion element and a plurality of transistors each having a collector, a base, and an emitter;
and a plurality of first field-effect transistors each having a source, a drain, and a gate, and in which
the sources and the drains of the first field-effect transistors are connected respectively between the emitters and the bases
of the plurality of transistors,

the photoelectric conversion element is connected to the base of a transistor selected from the plurality of transistors,
the photoelectric conversion element is a device which performs photoelectric conversion of light input information being
light intensity or light wavelength into an electric variable being electric current, electric charge, or voltage,

at least one of the collectors of the plurality of transistors is a first output part,
one of the emitters of the plurality of transistors is a second output part,
the emitters of the plurality of transistors other than the second output part are connected respectively to the bases of
the other transistors further excluding the selected transistor, to the base of which the photoelectric conversion element
is connected, and

the electric variable resulting from the photoelectric conversion is an electric signal in the form of an amplified current,
charge, or voltage obtained from the first output part or the second output part,

the method comprising: the step of applying gain control potentials to the gates to vary gain of the electric signal obtained
from the first output part or the second output part.

US Pat. No. 9,257,544

SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE

FUJI ELECTRIC CO., LTD., ...

1. A semiconductor device comprising:
a first semiconductor layer of a first conductivity type and formed of a silicon carbide semiconductor;
a second semiconductor layer of the first conductivity type and formed of the silicon carbide semiconductor having an impurity
concentration higher than that of the first semiconductor layer, the second semiconductor layer being disposed on one face
of the first semiconductor layer;

a third semiconductor layer of the first conductivity type and formed of the silicon carbide semiconductor having an impurity
concentration higher than that of the second semiconductor layer, the third semiconductor layer being disposed on a face that
with respect to a first semiconductor layer side of the second semiconductor layer, is on an opposite aspect of the second
semiconductor layer;

a fourth semiconductor layer of the second conductivity type and formed of the silicon carbide semiconductor, the fourth semiconductor
layer being disposed on a face that with respect to a first semiconductor layer side of the third semiconductor layer, is
on an opposite aspect of the third semiconductor layer;

a first semiconductor region of the first conductivity type and selectively disposed inside the fourth semiconductor layer;
a plurality of trenches that respectively penetrate the fourth semiconductor layer and the first semiconductor region in a
depth direction orthogonal to the one face of the first semiconductor layer, the plurality of trenches being disposed at predetermined
intervals in a first direction parallel to the one face of the first semiconductor layer, the plurality of trenches extending
in a second direction orthogonal to the first direction and parallel to the one face of the first semiconductor layer to form
stripes;

a gate electrode that is disposed inside each trench through a gate insulation film;
a second semiconductor region of the second conductivity type, having an impurity concentration higher than that of the fourth
semiconductor layer, and selectively disposed inside the fourth semiconductor layer, the second semiconductor region having
a depth deeper than that of the fourth semiconductor layer and shallower than that of the plurality of trenches;

a third semiconductor region of the second conductivity type that is disposed to cover a bottom portion of the plurality of
trenches;

a fifth semiconductor layer of the second conductivity type and disposed on the other face of the first semiconductor layer;
an emitter electrode that is in contact with the first semiconductor region and the second semiconductor region; and
a collector electrode that is in contact with the fifth semiconductor layer.

US Pat. No. 9,159,898

OXIDE SUPERCONDUCTOR THIN FILM AND SUPERCONDUCTING FAULT CURRENT LIMITER

FURUKAWA ELECTRIC CO., LT...

1. An oxide superconducting thin film, comprising a substrate, an intermediate layer provided on the substrate, and a superconducting
layer provided on the intermediate layer, wherein
the intermediate layer comprises an average thickness from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less,
the intermediate layer includes MgO with an NaCl-type crystal structure or CeO2,

an average value of a valence of the Ce element in the CeO2 as weighed by abundance is from 3.7 to 3.95,

an average value of a valence of the Mg element in the MgO as weighed by abundance is from 1.85 to 1.95, and
the superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main
component.

US Pat. No. 9,335,475

METHOD OF MANUFACTURING AN OPTICAL DEVICE HAVING A STEPWISE OR TAPERED LIGHT INPUT/OUTPUT PART

OKI ELECTRIC INDUSTRY CO....

1. A method of manufacturing an optical device comprising an optical waveguide including a core, a cladding provided around
the core, and a light input/output part through which a light beam is input or output, said method comprising:
preparing a substrate having a principal surface on which a substantially uniform thickness of single-crystalline film is
formed, the film having constituent atoms substantially forming a diamond lattice structure and having a surface being of
neither a (111) plane nor an equivalent plane to the (111) plane; and

subjecting the single-crystalline film to etching showing anisotropy depending on plane orientation to form the film into
a terraced or tapered pattern in both a width direction and a thickness direction so as to expose the (111) plane and the
equivalent plane.

US Pat. No. 9,362,482

METHOD OF PRODUCING PIEZOELECTRIC DEVICE USING BE, FE AND CO UNDER EXCESS OXYGEN ATMOSPHERE

CANON KABUSHIKI KAISHA, ...

1. A method of producing a piezoelectric device comprising a substrate bearing a piezoelectric material and a pair of electrodes
provided to contact the piezoelectric material, the method comprising:
subjecting a raw material comprising Bi, Fe and Co to a heat treatment at 430° C. or lower under an atmosphere comprising
at least 25 vol % oxygen to obtain a piezoelectric material formed of a perovskite-type metal oxide represented by formula
(1):

Bix(Fe1-yCoy)O3  (1)

where 0.95?x?1.25 and 0.10?y?0.30.
US Pat. No. 9,295,981

METHOD FOR PRODUCING ESTER COMPOUND BY REACTING AN UNSATURATED ORGANIC COMPOUND AND A FORMIC ACID ESTER IN THE PRESENCE OF A CATALYST SYSTEM CONTAINING A RUTHENIUM COMPOUND, A COBALT COMPOUND AND A HALIDE SALT

HITACHI CHEMICAL COMPANY,...

1. A method for producing an ester compound, the method comprising the step of reacting an organic compound having at least
one unsaturated carbon bond in the molecule, and a formic acid ester in the presence of a catalyst system containing: a ruthenium
compound; a cobalt compound; a halide salt; and a phenolic compound.

US Pat. No. 9,105,794

OXIDE SUPERCONDUCTOR THIN FILM, SUPERCONDUCTING FAULT CURRENT LIMITER, AND METHOD FOR MANUFACTURING OXIDE SUPERCONDUCTOR THIN FILM

FURUKAWA ELECTRIC CO., LT...

1. An oxide superconducting thin film, comprising:
a substrate having a single crystal structure, a main face of the substrate and a crystal face of the single crystal structure
forming an angle therebetween, wherein the angle formed between the main face of the substrate and the crystal face of the
single crystal structure is from 2° to 15°;

an intermediate layer formed on the main face of the substrate, the intermediate layer having an axis oriented in a direction
perpendicular to the crystal face; and

a superconducting layer formed on the intermediate layer, the superconducting layer containing, as a main component, an oxide
superconductor having a c-axis oriented in a direction perpendicular to a surface of the intermediate layer.

US Pat. No. 9,045,344

METHOD FOR PRODUCING ALIGNED CARBON NANOTUBE AGGREGATE

ZEON CORPORATION, Tokyo ...

1. A method of producing an aligned carbon nanotube aggregate, comprising the steps of:
dissolving in an organic solvent (i) an organometallic compound containing aluminum and/or a metal salt containing aluminum
and (ii) a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and the metal salt
to obtain a catalyst support layer coating agent;

applying the catalyst support layer coating agent to a substrate;
heating the catalyst support layer coating agent to obtain a catalyst support layer on the substrate;
dissolving in an organic solvent (a) an organometallic compound containing iron and/or a metal salt containing iron and (b)
a stabilizer for inhibiting a condensation polymerization reaction of the organometallic compound and the metal salt to obtain
a catalyst formation layer coating agent;

applying the catalyst formation layer coating agent to the catalyst support layer;
heating the catalyst formation layer coating agent to obtain a catalyst formation layer on the catalyst support layer; and
growing an aligned carbon nanotube aggregate on the substrate by chemical vapor deposition (CVD).

US Pat. No. 9,174,170

EXHAUST GAS TREATING CATALYST AND EXHAUST GAS PURIFICATION APPARATUS USING THE SAME

MITSUBISHI HEAVY INDUSTRI...

1. An exhaust gas treating catalyst for reducing nitrogen oxides in an exhaust gas to purify the exhaust gas, the exhaust
gas treating catalyst containing a complex oxide represented by a general formula ABO3, where
the A-site is composed of a lanthanoid (La) and barium (Ba),
the B-site is composed of iron (Fe), niobium (Nb), and palladium, and
fulfills {LaxBa(1-x)} {FeyNb(1-y)}(1-z)PdzO3,

where x is in a range of more than 0.30, but 0.95 or less, y is in a range of 0.07 or more, but 0.94 or less, and z is in
a range of 0.01 or more, but 0.10 or less, and

the complex oxide has such a structure that the barium functions as a NOx storing agent, and the niobium act on the palladium
to accelerate NO oxidation and NOx reduction.

US Pat. No. 9,423,309

PRESSURE SENSOR, METHOD FOR MANUFACTURE THEREOF, AND PRESSURE DETECTION MODULE

Nippon Mektron, Ltd., Mi...

1. A method for manufacture of a pressure sensor, comprising:
forming a conductor pattern by means of a subtractive process in which a metal foil laminated through an adhesive agent on
a surface of a base film is subjected to etching processing to provide a pair of electrodes on said base film;

laminating a photosensitive cover on said base film, and removing at least a portion of said conductor pattern corresponding
to said pair of electrodes thereby to cause said portion to be exposed, while covering a remaining portion of said conductor
pattern with a remaining portion of said photosensitive cover;

applying metal plating treatment for prevention of oxidation to the exposed portion of said conductor pattern including said
pair of electrodes; and

forming, thereafter, a hollow portion opened to outside air in the removed portion of said photosensitive cover corresponding
to said pair of electrodes, by laminating a cover film with a pressure sensing part formed thereon in advance in which contact
resistance thereof changes according to a pressure of contact thereof with said electrodes, and by bonding said cover film
to the remaining portion of said photosensitive cover by means of an adhesive agent.

US Pat. No. 9,356,100

SEMICONDUCTOR DEVICE

FUJI ELECTRIC CO., LTD., ...

1. A semiconductor device comprising:
a first conductivity type silicon carbide substrate;
a first conductivity type silicon carbide layer formed on a surface of the first conductivity type silicon carbide substrate,
and having an impurity concentration that is lower than that of the first conductivity type silicon carbide substrate;

a second conductivity type region selectively formed inside the first conductivity type silicon carbide layer;
a second conductivity type silicon carbide layer formed on surfaces of the first conductivity type silicon carbide layer and
the second conductivity type region, and having an impurity concentration that is lower than that of the second conductivity
type region;

a first conductivity type region selectively formed inside the second conductivity type silicon carbide layer, penetrating
the second conductivity type silicon carbide layer in a depth direction, and in contact with the first conductivity type silicon
carbide layer;

a first conductivity type source region formed inside the second conductivity type silicon carbide layer;
a second conductivity type high-concentration region formed inside the second conductivity type silicon carbide layer and
disposed on a side opposite to that of the first conductivity type region of the first conductivity type source region;

a source electrode electrically connected to the second conductivity type high-concentration region and the first conductivity
type source region;

a gate electrode formed through a gate insulating film on a surface of a portion between the first conductivity type source
region and the first conductivity type region in the second conductivity type silicon carbide layer, spanning from the first
conductivity type source region to the first conductivity type region;

a drain electrode formed on a back face of the first conductivity type silicon carbide substrate, wherein
an impurity concentration of the first conductivity type region is greater than 1.0×1016 cm?3 and less than or equal to 5.0×1016 cm?3,

a width of the first conductivity type region is within a range from 0.8 ?m to 3.0 ?m;
the second conductivity type silicon carbide layer directly underlies the first conductivity type source region; and
the second conductivity type silicon carbide layer extends to the same length as the second conductivity type region adjacent
to the first conductivity type region.

US Pat. No. 9,371,540

METHOD FOR PRODUCTION OF PLANT IMPARTED WITH STRESS TOLERANCE AND USE THEREOF

NATIONAL INSTITUTE OF ADV...

1. A method for producing a plant with an increase in high osmotic pressure tolerance, comprising
introducing into a plant a sequence encoding a fusion protein comprising a first polypeptide and a second polypeptide, wherein
the first polypeptide comprises the amino acid sequence set forth in SEQ ID NO: 8 and the second polypeptide comprises the
amino acid sequence set forth in SEQ ID NO: 21, wherein the expression of the fusion protein causes transcription of a target
gene of the first polypeptide to be inhibited in the plant; and

selecting a plant for an increase in high osmotic pressure tolerance in comparison to the osmotic pressure tolerance of a
plant not comprising said fusion protein.

US Pat. No. 9,735,342

PIEZOELECTRIC THIN FILM AND METHOD FOR PRODUCING THE SAME

DENSO CORPORATION, Kariy...

1. A piezoelectric thin film that is formed through sputtering and consists essentially of scandium aluminum nitride, wherein
the piezoelectric thin film has a carbon atomic content between 0.1 at % and 2.5 at %.

US Pat. No. 9,135,990

DRIVE METHOD FOR MEMORY ELEMENT, AND STORAGE DEVICE USING MEMORY ELEMENT

National Institute of Adv...

1. A drive method for a memory element, the memory element comprising an insulating substrate; a first electrode and a second
electrode provided on the insulating substrate; and an inter-electrode gap portion provided between the first electrode and
the second electrode and having a gap of an order of nanometers where a phenomenon of a change in resistance value between
the first and second electrodes occurs by application of a predetermined voltage between the first electrode and the second
electrode, wherein a state of the memory element can be shifted from a predetermined low-resistance state to a predetermined
high-resistance state and from the high-resistance state to the low-resistance state by application of a voltage pulse, the
method comprising:
reducing a current value after a change of a resistance value, by performing, at least upon shifting from the high-resistance
state to the low-resistance state, application of a voltage pulse to a memory element from a pulse generating source through
a series-connected resistor; and

performing application of the voltage pulse, in a case of shifting from the high-resistance state to the low-resistance state,
such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical
resistance in a case of shifting from the low-resistance state to the high-resistance state.

US Pat. No. 9,516,699

SENSOR NETWORK SYSTEM

NATIONAL INSTITUTE OF ADV...

1. A sensor network system comprising:
a plurality of sensor terminals which are driven with a stand-alone power supply and provided in a predetermined area in which
one or more sensors are connected to each of the sensor terminals provided at a predetermined position in the predetermined
area to wirelessly transmit sensing data of one or more environmental elements sensed with the one or more sensors; and

a monitoring center device collecting the sensing data wirelessly transmitted from the sensor terminals,
each of the sensor terminals having a wireless transmitter that wirelessly and intermittently transmits its terminal identification
information, sensor identification information identifying each type of the one or more sensors and latest sensing data sensed
by each of the one or more sensors,

the monitoring center device comprising:
a processor that acquires positional information of the sensor terminals in the predetermined area;
a memory that accumulates time-series data of the sensing data transmitted from the sensor terminals as corresponding to acquisition
times of the sensing data; and

a display that displays a visualized time-series variation of the sensing data of the one or more environmental elements detected
by the one or more sensors in the predetermined area by using the positional information of the sensor terminals and the time-series
data of the sensing data,

wherein the monitoring center device regards a receiving time of a transmission signal including the sensing data as the acquisition
time of the sensing data to accumulate the sensing data, and the transmission signal does not include the acquisition time
of the sensing data.

US Pat. No. 9,391,224

SOLAR BATTERY

National Institute of Adv...

1. A solar battery comprising:
a P-type silicon layer;
a graphene layer formed on the P-type silicon layer;
a quantum dot layer formed on the graphene layer and having a multiple energy level structure consisting of an energy level
of a valence band and an energy level of a conduction band, and intermediate energy levels located between the valence band
and the conduction band; and

an N-type silicon layer formed on the quantum dot layer,
wherein the quantum dot layer is composed of a plurality of quantum dots, each quantum dot comprising a silicon cluster which
has a first crystal structure at a surface thereof and a second crystal structure inside the cluster wherein the first crystal
structure is different from the second crystal structure, the first crystal structure including a ? electron and forming an
sp2 hybrid orbital and the second crystal structure being a structure in which silicon atoms are periodically arranged; each quantum
dot having a particle diameter of from 1 nm to 3 nm wherein along the particle diameter, a crystal structure of the quantum
dot changes from the first crystal structure to the second crystal structure to the first crystal structure; wherein the plurality
of quantum dots are periodically arranged so that a distance between adjacent quantum dots is 1 nm or less, wherein at the
distance, wave functions of the adjacent quantum dots overlap each other; wherein an electron of the quantum dot layer directly
migrates along the multiple energy level structure formed by periodic potentials of the plurality of quantum dots.

US Pat. No. 9,184,240

METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER

SUMITOMO CHEMICAL COMPANY...

1. A method for producing a semiconductor wafer, comprising:
forming a compound semiconductor layer on a base wafer by epitaxial growth;
cleansing a surface of the compound semiconductor later by means of a cleansing agent containing a selenium compound, and
forming an insulating layer on the surface of the compound semiconductor later, wherein
the molar concentration of the selenium compound in the cleansing agent falls within the range of 7×10?3 mol/1 to 7×10?1 mol/l, such that surface density of selenium atoms contained in an interface between the compound semiconductor layer and
the insulating layer is equal to or less than 1×1014 atoms/cm2.

US Pat. No. 9,455,389

THERMOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD FOR THE THERMOELECTRIC CONVERSION ELEMENT, AND THERMOELECTRIC CONVERSION MODULE

National Institute of Adv...

3. A thermoelectric conversion module comprising:
a plurality of p-type elements each composed of p-type thermoelectric material and a plurality of n-type elements each composed
of n-type thermoelectric material, the plurality of p-type elements and the plurality of n-type elements being spatially arranged
parallel to one another with a space provided therebetween;

wherein on a first end side, one of the p-type elements and one of the n-type elements are electrically connected to each
other via a first electrode;

on a second end side, the one of the p-type elements and another one of the n-type elements are electrically connected to
each other via a second electrode at least some of the p-type elements and at least some of the n-type elements are alternately
connected electronically in series; and

one or more of the plurality of p-type elements and the plurality of n-type elements is a thermoelectric conversion element
comprising:

a plurality of particles composed of thermoelectric material and linearly connected sequentially in series to each other,
and adjacent particles, of the plurality of particles, form an adjacent pair of the plurality of particles; and

a protrusion located between and coupling each adjacent pair of the plurality of particles to each other sequentially in series,
and the protrusion being formed from thermoelectric material which protrudes outwardly from a connection point of the respective
protrusion with each adjacent pair of the plurality of particles,

wherein the protrusion has one of:
a continuous shape extending around an entire periphery of the protrusion, or
a shape in which one or more interrupted portions exist in a range of the entire periphery of the protrusion;
a circumferential length of any interrupted portion of the protrusion is less than one half of the entire periphery of the
protrusion;

the plurality of particles are arranged so that an overall structure of the thermoelectric conversion element, of the one
or more of the plurality of the p-type elements and the plurality of n-type elements, forms a columnar arrangement; and

a narrowed portion is formed, in the columnar arrangement, between each adjacent pair of the plurality of particles in the
thermoelectric conversion element of the one or more of the plurality of p-type elements and the plurality of n-type elements.

US Pat. No. 9,272,971

CATALYST FOR C2 OXYGENATE SYNTHESIS, DEVICE FOR MANUFACTURING C2 OXYGENATE, AND METHOD FOR MANUFACTURING C2 OXYGENATE

SEKISUI CHEMICAL CO., LTD...

1. A catalyst for C2 oxygenate synthesis from a mixed gas containing hydrogen and carbon monoxide, the catalyst comprising
rhodium, manganese and lithium as hydrogenated active metals, and titanium as an auxiliary active metal, which are supported
on a porous carrier, wherein the porous carrier has an average pore diameter of 0.1 to 20 nm.

US Pat. No. 9,478,452

SMALL PRODUCTION DEVICE AND PRODUCTION SYSTEM USING THE SAME

NATIONAL INSTITUTE OF ADV...

1. A small production device comprising:
a processing chamber to perform an intended process for a processing substrate;
a front chamber to perform loading and unloading of the processing substrate with the processing chamber, using a conveyance
mechanism provided internally;

a processing-chamber control unit provided in the processing chamber to control the process for the processing substrate in
the processing chamber; and

a front-chamber control unit provided in the front chamber to control the loading and unloading of the processing substrate
between the processing chamber and the front chamber,

wherein the processing-chamber control unit
sends a load request signal when a preparation of the process is completed, the load request signal requesting, to the front-chamber
control unit, the loading of the processing substrate from the front chamber to the processing chamber,

starts the process when a load acknowledgment signal is received from the front-chamber control unit, the load acknowledgment
signal indicating that the loading of the processing substrate is completed,

sends an unload request signal when the process is completed, the unload request signal requesting, to the front-chamber control
unit, the unloading of the processing substrate from the processing chamber to the front chamber, and

starts the preparation of the process when an unload acknowledgment signal is received from the front-chamber control unit,
the unload acknowledgment signal indicating that the unloading of the processing substrate is completed, and

the front-chamber control unit
starts a loading behavior for the processing substrate when the load request signal is received from the processing-chamber
control unit,

sends the load acknowledgment signal to the processing-chamber control unit when the loading behavior for the processing substrate
is completed,

starts an unloading behavior for the processing substrate when the unload request signal is received from the processing-chamber
control unit, and

sends the unload acknowledgment signal to the processing-chamber control unit when the processing substrate is unloaded from
the processing chamber.

US Pat. No. 9,308,707

JOINED PRODUCT

Sumitomo Electric Industr...

1. A joined product with a cemented carbide sintered compact serving as a first material to be joined and a cBN sintered compact
serving as a second material to be joined, wherein: said first material to be joined and said second material to be joined
are joined together via a joining material disposed therebetween and containing titanium (Ti); and a titanium nitride (TiN)
compound layer having a thickness of 10-300 nm is produced at an interface between said second material to be joined and said
joining material so that said titanium nitride (TiN) compound layer is located between said second material to be joined and
said joining material.

US Pat. No. 9,190,145

DRIVE METHOD FOR MEMORY ELEMENT AND STORAGE DEVICE USING MEMORY ELEMENT

National Institute of Adv...

1. A storage device, comprising:
a memory element comprising an insulating substrate; a first electrode and a second electrode provided on the insulating substrate;
and an inter-electrode gap portion provided between the first electrode and the second electrode and having a gap of an order
of nanometers where a phenomenon of a change in resistance value between the first and second electrodes occurs; and

a current pulse generating unit that generates a current pulse for performing a shift from a high-resistance state to a low-resistance
state, wherein

the current pulse generating unit applies the current pulse to the memory element by a constant current circuit.

US Pat. No. 9,214,894

EVALUATION METHOD FOR SOLAR POWER GENERATION SYSTEM, EVALUATION DEVICE, AND EVALUATION PROGRAM

OMRON CORPORATION, Kyoto...

1. A diagnosis method for a solar power generation system, the method diagnosing a whole or a part of an output in the solar
power generation system, the method comprising:
acquiring any two measurement values of an electric current value, a voltage value, and an electric power value of the output;
and

diagnosing the output on the basis of transition of a power point defined by a position on a graph having two coordinate components
specified by the acquired any two measurement values, the transition of the power point occurring on the graph,

the diagnosing including sub-processes of:
storing time series data of the power point in a storage;
specifying a pattern of the transition of the power point by use of time series data; and
diagnosing the output on the basis of the pattern of the transition.
US Pat. No. 9,168,508

METHOD FOR PRODUCING BIODIESEL FUEL AND BIODIESEL FUEL COMPOSITION

NATIONAL INSTITUTE OF ADV...

1. A method for producing biodiesel fuel, comprising:
impregnating a zeolite support with a solution containing a palladium(Pd) compound and a platinum(Pt) compound, and drying
to provide a hydrogenation catalyst(I), and kneading the hydrogenation catalyst(I) with an alumina support to provide a hydrogenation
catalyst composition comprising Pd and Pt, wherein the hydrogenation catalyst(I) has a Pd/Pt molar ratio of from 0.1/10 to
10/1, and a total amount of Pd and Pt in the hydrogenation catalyst(I) is from 0.1 to 10 weight %, and the Pd and Pt are supported
with the zeolite support having a silica/alumina ratio of 40 or more, and

hydrogenating (1) a fatty acid methyl ester prepared from fat and/or waste edible oil by a transesterification reaction, and/or
(2) a fatty acid methyl ester prepared from a fatty acid by an esterification reaction in the presence of the hydrogenation
catalyst composition under about 1 MPa or less of hydrogen pressure at a temperature from 80 ° C. to 120 ° C. to prepare a
hydrogenated product containing a saturated fatty acid methyl ester, a di- or more-unsaturated fatty acid methyl ester, and
a mono-unsaturated fatty acid methyl ester.

US Pat. No. 9,395,504

SYSTEM TO CONTROL WAVELENGTH AND METHOD TO CONTROL WAVELENGTH

Sumitomo Electric Industr...

1. A system to control a wavelength comprising:
a splitter configured to branch an optical signal output by a wavelength-tunable light source into a first to a third optical
signals;

a first photodiode configured to perform an optical electrical conversion of the first optical signal transmitting a first
etalon;

a second photodiode configured to perform an optical electrical conversion of the second optical signal transmitting a second
etalon, an FSR of the second etalon being identical to that of the first etalon, peak wavelengths of intensity of a transmitted
light of the second etalon being different from those of the first etalon;

a third photodiode configured to perform an optical electrical conversion of the third optical signal; and
a controller configured to control the wavelength-tunable light source with use of a coefficient calculated by following formulas
(1) and (2) of which absolute value is smaller,

Coefficient=(PD1?A·PD3)/(PD2?B·PD3)  (1)

Coefficient=(PD2?B·PD3)/(PD1?A·PD3)  (2)

wherein:
PD1 is an output of the first photodiode;
PD2 is an output of the second photodiode;
PD3 is an output of the third photodiode;
A is an average of a ratio of PD1 with respect to PD3; and
B is an average of a ratio of PD2 with respect to PD3.

US Pat. No. 9,246,461

MANUFACTURING METHOD OF PIEZOELECTRIC-BODY FILM, AND PIEZOELECTRIC-BODY FILM MANUFACTURED BY THE MANUFACTURING METHOD

DENSO CORPORATION, Aichi...

1. A method for manufacturing a piezoelectric thin film including a substrate on which an aluminum nitride thin film containing
scandium is provided, the method comprising:
an aluminum nitride sputtering step for sputtering aluminum and scandium so as to form, directly on the substrate, the aluminum
nitride thin film containing scandium, under an atmosphere containing at least a nitrogen gas, a scandium content rate falls
within the range from more than 35% by atom to less than 40% by atom when the number of atoms of scandium and the number of
atoms of aluminum of the aluminum nitride thin film are 100% by atom in total,

the substrate having a temperature within the range from 200° C. to 400° C. during the sputtering step, and
wherein the substrate consists of a silicon monocrystal or a silicon monocrystal having a polycrystalline film thereon.

US Pat. No. 9,350,018

NEGATIVE ELECTRODE FOR USE IN SECONDARY BATTERY AND SECONDARY BATTERY INCLUDING THE SAME

KAWASAKI JUKOGYO KABUSHIK...

1. A secondary battery comprising:
at least one fiber negative electrode, each fiber negative electrode including a carbon fiber and a negative electrode active
material coating, the negative electrode active material coating being formed on a surface of the carbon fiber, the negative
electrode active material coating containing a compound represented by a chemical formula 1;

at least one fiber positive electrode, each fiber positive electrode including a carbon fiber and a positive electrode active
material coating, the positive electrode active material coating being formed on a surface of the carbon fiber, the positive
electrode active material coating containing nickel hydroxide;

an aqueous electrolyte solution; and
a separator, wherein
the negative electrode active material coating has a surface that is uncoated with an electrically conductive material,
the chemical formula 1 is LiMneNifO2, in which 1?f/e?1.5,

protons are an intercalating species of the secondary battery,
the at least one fiber negative electrode directly absorbs the protons that move from the at least one fiber positive electrode
in charging, and

the at least one fiber negative electrode directly desorbs the protons that move to the at least one fiber positive electrode
in discharging.

US Pat. No. 9,059,407

METHOD FOR MANUFACTURING ORGANIC SEMICONDUCTOR THIN FILM AND MONOCRYASTALLINE ORGANIC SEMICONDUCTOR THIN FILM

National Institute of Adv...

1. A method for manufacturing an organic semiconductor thin film comprising the steps of:
preparing a first ink by dissolving a concentration of an organic semiconductor in an organic solvent comprising chlorobenzene
(CB) or ortho-dichlorobenzene (DCB) and a second ink of comprising an organic solvent comprising N,N-dimethyl formamide (DMF);
and

mixing the first and second inks on a substrate.

US Pat. No. 9,424,960

AGGREGATED THREAD STRUCTURE, PRODUCTION METHOD THEREOF, AND ELECTRIC WIRE USING THE SAME

FURUKAWA ELECTRIC CO., LT...

1. A method for producing an aggregated thread structure, the method comprising:
(a) dispersing carbon nanotubes to a first solvent, which is water or a mixed solvent containing organic solvent and water,
with a surfactant, to create a dispersion; and

(b) injecting said dispersion of carbon nanotubes into a condensing liquid, which is a second solvent differing from the first
solvent, to thereby aggregate and spin the carbon nanotubes;

wherein said condensing liquid is a solution consisting essentially of one of N-methyl pyrrolidone, N,N-dimethyl acetamide,
propylene carbonate, formamide, N-methyl formamide, methanol, ethanol, or propanol, and said condensing liquid and said first
solvent differ in their affinity to said surfactant, and

the pH of said condensing liquid is 3 to 11.

US Pat. No. 9,095,846

BIMETALLIC CATALYSTS FOR CO2 HYDROGENATION AND H2 GENERATION FROM FORMIC ACID AND/OR SALTS THEREOF

Brookhaven Science Associ...

19. A method of dehydrogenating formic acid and/or a salt thereof to form H2 and CO2 comprising reacting formic acid and/or a salt thereof in the presence of a catalyst of formula II below:
wherein:
X is independently OH, SH, or NH2;

M independently represents Ni, Pd, Pt, Co, Rh, Ir, Fe, Ru, or Os;
Y independently represents a coordinating solvent species or solvent molecule selected from the group consisting of halide,
water, hydroxyl, carbonyl, acetonitrile, dimethylformamide, and dimethylsulfoxide;

L independently represents Cp, Cp*, or an unsubstituted or substituted n-arene;
m and c independently represent integers from 1 to 6;
n represents 0, +1, +2, +3, +4, +5, or +6;
a represents an integer from 0 to 6;
B represents an anion; and
m×n=a×c.

US Pat. No. 9,065,139

FIBER ELECTRODE FOR LITHIUM SECONDARY BATTERY, FABRICATION METHOD THEREFOR, AND LITHIUM SECONDARY BATTERY INCLUDING FIBER ELECTRODE

NATIONAL INSTITUTE OF ADV...

1. A fiber negative electrode for a lithium secondary battery, comprising:
a carbon fiber current collector;
an outer layer which is a tubular composite layer of a Sn oxide and MxOy formed on the carbon fiber current collector; and

an intermediate layer formed of a Sn alloy, which has a lithium occlusion capacity and which is present at an interface between
the carbon fiber current collector and the outer layer (M of MxOy is at least one kind of metal atom selected from the group consisting of Fe, Mo, Co, Ni, Cr, Cu, In, Sb, and Bi; x is 0 and the number y of oxygen atoms O is 0?y?w if the number of oxygen atoms O in a chemical bond with metal atoms M is w based
on the stoichiometry).

US Pat. No. 9,384,956

NEBULIZER AND ANALYSIS EQUIPMENT

National Institute of Adv...

1. A nebulizer, comprising:
a cylindrical outer tube, with a nebulizing outlet formed at one end of the outer tube;
a cylindrical inner tube arranged in the outer tube and aligned coaxially therewith, to form a gas flow channel and a sample
flow channel, the gas flow channel defined between the inner and outer tubes and the sample flow channel defined by the inner
tube; and

a mesh component, arranged and supported at the nebulizing outlet, with a plurality of holes for a liquid sample that flows
out of the sample flow channel and is to be nebulized by a nebulizing gas into liquid droplets to pass through along with
the nebulizing gas.

US Pat. No. 9,269,954

PRODUCTION PROCESS FOR LITHIUM-SILICATE-SYSTEM COMPOUND

NATIONAL INSTITUTE OF ADV...

1. A production process for lithium-silicate-system compound, comprising:
reacting a lithium-silicate compound being expressed by Li2SiO3 with a substance comprising at least one member of transition-metal elements that is selected from the group consisting of
iron and manganese at 400-650° C. in a molten salt of a carbonate mixture comprising lithium carbonate and at least one member
of alkali-metal carbonates that is selected from the group consisting of potassium carbonate, sodium carbonate, rubidium carbonate
and cesium carbonate in a mixed-gas atmosphere including carbon dioxide and a reducing gas.

US Pat. No. 9,227,171

DEVICE FOR MANUFACTURING ALIGNED CARBON NANOTUBE ASSEMBLY

ZEON CORPORATION, Tokyo ...

1. An apparatus for producing aligned carbon nanotube aggregates, the apparatus comprising:
a growth unit including a growth furnace for growing therein the aligned carbon nanotube aggregates on a substrate supporting
a catalyst on a surface of the substrate; and

a first seal, the first seal comprising:
at least one seal gas ejection section that ejects seal gas along an opening plane of (i) an inlet or an outlet of the growth
furnace or (ii) both the inlet and the outlet of the growth furnace; and

at least one exhaust section that exhausts the seal gas thus ejected so that the seal gas does not flow into the growth furnace.

US Pat. No. 9,121,873

ELECTRONIC CIRCUIT COMPONENT AUTHENTICITY DETERMINATION METHOD

NATIONAL INSTITUTE OF ADV...

1. An electronic circuit component authenticity determination method, comprising:
operating an electronic circuit component under a predetermined condition at a time of manufacturing or initialization of
the electronic circuit component, measuring a waveform of one of power consumption and an electromagnetic wave at a time of
the operation, and storing the waveform as first waveform data;

operating an authenticity determination target electronic circuit component under the predetermined condition, measuring a
waveform of one of power consumption and an electromagnetic wave, and temporarily storing the waveform as second waveform
data; and

comparing the stored first waveform data with the second waveform data, determining that the electronic circuit component
is a genuine when the waveform data match, and determining that the electronic circuit component is a counterfeit product
when the waveform data are different.

US Pat. No. 9,807,887

STRUCTURE FORMED ON SUBSTRATE, STRUCTURE MANUFACTURING METHOD AND LINE PATTERN

NATIONAL INSTITUTE OF ADV...

1. A structure comprising:
a substrate;
a droplet overlapping solidification layer obtained by droplets on the substrate, the droplets inclining in the direction
of movement of a substrate and continuously overlapping each other and solidifying;

a droplet flow solidified layer obtained by the droplets flowing on the droplet overlapping solidification layer and continuously
being solidified without the droplets overlapping; and

a recessed part formed at the boundary region between the droplet overlapping solidification layer and the droplet flow solidified
layer, the recessed part is formed almost parallel to the substrate and inclined in a longitudinal direction of the substrate,

wherein a top surface of the structure comprises a scaly shape which is formed almost parallel to the substrate and inclined
in a longitudinal direction of the substrate, whereby the top is provided with a smooth continuous surface,

the at least one of side part of the droplet overlapping solidification layer comprises a convex part which is inclined continuously
in the moving direction of the substrate,

a cross part in the recessed part intersecting the almost parallel and longitudinal direction of the substrate comprises an
inverted tapered shape.

US Pat. No. 9,330,805

LITHIUM SILICATE-BASED COMPOUND, POSITIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM ION SECONDARY BATTERY, AND LITHIUM ION SECONDARY BATTERY USING THE SAME

KABUSHIKI KAISHA TOYOTA J...

1. A lithium silicate-based compound, comprising: lithium (Li); iron (Fe); silicon (Si); and oxygen (O), and expressed by
a composition formula, Li1.5FeSiO4.25,
wherein the lithium silicate-based compound is a monoclinic crystal that belongs to space group P21/n.

US Pat. No. 9,315,390

PRODUCTION PROCESS FOR LITHIUM-SILICATE-BASED COMPOUND

KABUSHIKI KAISHA TOYOTA J...

1. A production process for lithium-silicate-based compound, comprising:
reaching a lithium-silicate compound being expressed by Li2SiO3 with a transition-metal-element-containing substance including at least one member being selected from the group consisting
of iron and manganese at 550° C. or less within a mixture with a molten salt including at least two alkali-metal nitrates
in an atmosphere in the presence of a mixed gas including carbon dioxide and a reducing gas,

wherein the molten salt includes lithium nitrate, and
a lithium-silicate-based compound formed by the process is a compound expressed by the following compositional formula(1):
Li2+a?bAbMl-xM?xSiO4+c  (1)

wherein, in formula (1), A is at least one element selected from the group consisting of Na, K, Rb and Cs;
M is at least one element selected from the group consisting of Fe and Mn;
M? is at least one element selected from the group consisting of Mg, Ca, Co, Al, Ni, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W;
and

the respective subscripts are specified as follows:
0?×?0.5;
0 0?b<0.2; and
0

US Pat. No. 9,362,328

SEMICONDUCTOR DEVICE AND IMAGING APPARATUS

National Institute of Adv...

1. A phototransistor having a vertical bipolar transistor structure in which an emitter region, a base region, and a collector
region are formed in this order from a surface of a semiconductor substrate in a depth direction,
the phototransistor further comprising an electrode embedded from the surface of the semiconductor substrate into an inside
of the semiconductor substrate, and insulated by an oxide film, wherein

in the surface of the substrate, the phototransistor has a structure in which a first semiconductor region of a first conductivity
type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity
type are arranged, from the surface side, inside a phototransistor region surrounded by the embedded electrode and along the
embedded electrode with the oxide film interposed therebetween, the second semiconductor region being located below the first
semiconductor region and having a side surface, the third semiconductor region being located below the second semiconductor
region, said embedded electrode being opposed via the oxide film to said side surface of said second semiconductor region,

the embedded electrode is insulated from the first semiconductor region, the second semiconductor region, and the third semiconductor
region by the oxide film, and

by application of voltage to the embedded electrode, a current gain applied to a photocurrent generated by the phototransistor
as a result of light irradiation is variable in a current gain varying region adjacent to the embedded electrode.

US Pat. No. 9,243,257

TRANSCRIPTIONAL REPRESSOR PEPTIDES AND GENES FOR THE SAME

NATIONAL INSTITUTE OF ADV...

1. An isolated chimeric protein which is capable of repressing transcription, comprising:
a peptide capable of repressing transcription in a plant, consisting of the amino acid sequence of SEQ ID NO: 78 and
a transcription factor or its DNA-binding domain, wherein said transcription factor or its DNA-binding domain is heterologous
to said peptide,

wherein the peptide is operably linked to the transcription factor or its DNA-binding domain.

US Pat. No. 9,428,809

SOLID-PHASE CARRIER FOR AMINATED OLIGONUCLEOTIDE

National Institute of Adv...

1. An aminated oligonucleotide represented by the following formula I:

wherein
PG1a and PG1b are each independently a hydrogen atom or a protective group for the amino group, or

PG1a and PG1b together form a protective group for the amino group;

R2 is ethylene;

R3 is an unsubstituted divalent aliphatic hydrocarbon group having 2 to 15 members in the main chain; and

A is an oligonucleotide.

US Pat. No. 9,129,673

SUPERLATTICE RECORDING LAYER FOR A PHASE CHANGE MEMORY

NATIONAL INSTITUTE OF ADV...

1. A solid-state memory comprising:
a recording layer in which data is recorded or erased,
the recording layer including a laminated structure in which electric properties are changed in response to a phase separation,
the laminated structure including a first layer containing an Sb atom(s) and a second layer containing a Ge atom(s), which
layers are laminated so as to constitute a superlattice structure, wherein the second layer is constituted by an atomic layer
having five or less Ge atoms, and the first layer is constituted by an atomic layer having an odd number of Sb atom(s).

US Pat. No. 9,598,285

APPARATUS FOR PRODUCING ALIGNED CARBON NANOTUBE AGGREGATES

ZEON CORPORATION, Tokyo ...

1. An apparatus for producing aligned carbon nanotube aggregates,
the apparatus being configured to grow the aligned carbon nanotube aggregate by:
causing a catalyst formed on a surface of a substrate to be surrounded by a reducing gas environment constituted by a reducing
gas;

heating at least either the catalyst or the reducing gas;
causing the catalyst to be surrounded by a raw material gas environment constituted by a raw material gas; and
heating at least either the catalyst or the raw material gas,
at least either an apparatus component exposed to the reducing gas or an apparatus component exposed to the raw material gas
being made from a heat-resistant alloy, and having a surface plated with molten aluminum so as to have, between a base material,
which is the heat-resistant alloy, and aluminum, an alloy layer of the heat-resistant alloy and aluminum,

the apparatus comprising:
a formation unit for causing the catalyst to be surrounded by the reducing gas environment constituted by the reducing gas,
and heating at least either the catalyst or the reducing gas;

a growth unit for growing the aligned carbon nanotube aggregate by causing the catalyst to be surrounded by the raw material
gas environment constituted by the raw material gas, and heating at least either the catalyst or the raw material gas; and

a transfer unit for transferring the substrate at least from the formation unit to the growth unit,
the formation unit including a formation furnace in which the reducing gas is retained, a reducing gas ejection section for
ejecting the reducing gas, and a heater for heating at least either the catalyst or the reducing gas,

the growth unit including a growth furnace in which the raw material gas is retained, a raw material gas ejection section
for ejecting the raw material gas, and a heater for heating at least either the catalyst or the raw material gas,

the transfer unit including a mesh belt and a belt driven section,
one of the apparatus components which have been plated with molten aluminum being the growth furnace, in which an environment
of high-carbon concentration is retained, the environment of high-carbon concentration being an environment in which a proportion
of the raw material gas to a total flow is approximately 2% to 20%,

wherein the base material, which is the heat-resistant alloy, includes at least one selected from the group consisting of
a heat-resistant steel, stainless steel, and a nickel-based alloy, and wherein the apparatus component is not the substrate.

US Pat. No. 9,336,918

SAMPLE-CONTAINING CELL FOR X-RAY MICROSCOPE AND METHOD FOR OBSERVING X-RAY MICROSCOPIC IMAGE

National Institute of Adv...

1. A sample-containing cell for an X-ray microscope, the sample-containing cell used in performing X-ray microscope observation
in a vacuum mirror body, the sample-containing cell comprising:
a cavity part for containing a sample solution inside;
a charged particle incident window provided on one face of the sample-containing cell, for allowing charged particles to be
incident on the cavity part;

an X-ray emission film that receives irradiation with the charged particles and emits a characteristic X-ray in a soft X-ray
region and a first X-ray transmission film that transmits the characteristic X-ray and also functions as an observation sample
supporting film, the films provided in the charged particle incident window in this order;

an X-ray transmission window provided on the other face of the sample-containing cell; and
a second X-ray transmission film that transmits the characteristic X-ray, the film provided in the X-ray transmission window,
wherein

the cavity part is separated with a third X-ray transmission film that transmits the characteristic X-ray into a first cavity
part on a side of the one face of the sample-containing cell and a second cavity part on a side of the other face of the sample-containing
cell, and

a hole part is provided in the sample-containing cell, for filling the first cavity part with the sample solution.
US Pat. No. 9,181,561

ADIPONECTIN-CONTAINING EATING BEHAVIOR CONTROL AGENT FOR ORAL ADMINISTRATION

Hokusan Co., Ltd., Hokka...

1. A method for preparation of an appetite enhancer for oral administration, comprising
using a strawberry fruit of a transformed strawberry that expresses a gene encoding human adiponectin to prepare the appetite
enhancer for oral administration.

US Pat. No. 9,337,234

PHOTOELECTRIC CONVERTER, PHOTOELECTRIC CONVERTER ARRAY AND IMAGING DEVICE

NATIONAL INSTITUTE OF ADV...

1. A photoelectric converter comprising:
a first pn junction having a photoelectric conversion function and comprised of at least two semiconductor regions of different
conductivity types; and

a first field-effect transistor including a first source, a first drain, and a first insulated gate, the first source connected
with one of the semiconductor regions, in which when either of the semiconductor region is exposed to light, a photocurrent
flows in the first pn junction, wherein:

the first field-effect transistor includes a same conductivity type channel as that of the one of the semiconductor regions;
the first drain of the first field-effect transistor is supplied with a second potential at which the first pn junction is
zero-biased or reverse-biased relative to the potential of the other of the semiconductor regions; and

by supplying, to the first insulated gate, a first gate potential which makes the first field-effect transistor conductive
when the first source reaches a first potential at which the one of the semiconductor regions becomes zero-biased or reverse-biased
relative to the other of the semiconductor regions, the photoelectric converter is configured to control saturation of the
first pn junction not to be biased by a deep forward voltage, even when either of the two semiconductor regions is exposed
to light.

US Pat. No. 9,444,221

LASER APPARATUS AND METHOD TO RE-TUNE EMISSION WAVELENGTH TUNABLE LD

Sumitomo Electric Industr...

1. A laser apparatus, comprising
a wavelength tunable laser diode (t-LD) providing a heater; and
a controller to control power supplied to the heater to re-tune an emission wavelength of the t-LD by changing the power from
first power Pa to second power Pb,

wherein the controller supplies pre-emphasis power Pp before supplying the second power Pb, the pre-emphasis power Pp being
greater than the second power Pb when the second power Pb is greater than the first power Pa, and supplies the pre-emphasis
power Pp smaller than the second power Pb when the second power Pb is smaller than the first power Pa.

US Pat. No. 9,146,095

FBG VIBRATION DETECTION SYSTEM, APPARATUS AND VIBRATION DETECTION METHOD USING THE SYSTEM

NATIONAL INSTITUTE OF ADV...

1. A vibration detection system for detecting vibration, the system comprising:
a fiber laser including:
a Fiber Bragg Grating (FBG) operating as a reflection mirror of the fiber laser, such that the fiber laser has a resonant
structure, and

an opto-electrical conversion unit converting intensity of reflection light from the FBG into an electrical signal, the reflection
light being lased by the fiber laser;

an optical amplifier;
an optical circulator; and
an optical coupler,
wherein the fiber laser has a lasing wavelength at the Bragg wavelength of the FBG, the Bragg wavelength being determined
by the optical amplifier configured for optical amplification in a wavelength range that comprises a reflection wavelength
of the FBG by using the FBG for a sensor operating as a reflection mirror.

US Pat. No. 9,139,745

AGGREGATE OF SPHERICAL CORE-SHELL CERIUM OXIDE/POLYMER HYBRID NANOPARTICLES AND METHOD FOR PRODUCING THE SAME

National Institute of Adv...

1. An aggregate of cerium oxide/polymer nanoparticles for an optical device having a high refractive index,
the cerium oxide/polymer nanoparticles are spherical core-shell cerium oxide/polymer hybrid nanoparticles having a spherical
secondary particle formed by assembled cerium oxide primary particles having a size range of 2 nm to 3 nm serving as the core
and a crosslinked polymer serving as the shell, wherein

1) the aggregate is highly concentrated, with a volume fraction of the spherical core-shell cerium oxide/polymer hybrid nanoparticles
being at least 32%;

2) the aggregate contains a fixing agent made from a resin;
3) the aggregate is configured such that the fixing agent fills in voids between the spherical core-shell cerium oxide/polymer
hybrid nanoparticles;

4) the aggregate has a uniform distribution of the spherical core-shell cerium oxide/polymer hybrid nanoparticles; and
5) the aggregate has the mechanical strength resistant to destruction by scraping with a metal rod and no silane coupling
agent or surfactant is present on a surface of the core of the spherical core-shell cerium oxide/polymer hybrid nanoparticles.

US Pat. No. 9,120,071

VARIABLE PITCH ARRAY SPOTTER

NATIONAL INSTITUTE OF ADV...

1. A spotter comprising:
a plurality of spotting heads, each of the plurality of spotting heads being flexible and having a discharging portion at
a tip portion, the plurality of spotting heads form an m×n array (at least m or n is greater than 1) with m spotting heads
arranged lengthwise and n spotting heads arranged crosswise; and

a pitch varying mechanism configured to vary an array pitch of the plurality of spotting heads in a lengthwise direction and
an array pitch of the plurality of spotting heads in a crosswise direction,

the pitch varying mechanism comprising:
n first guiding members arranged in the crosswise direction, each of the n first guiding members having a first guiding hole,
the m spotting heads arranged in the lengthwise direction being inserted into the first guiding hole, respectively, the first
guiding hole extending in the lengthwise direction; and

m second guiding members arranged in the lengthwise direction, each of the m second guiding members having a second guiding
hole, the n spotting heads arranged in the crosswise direction being inserted into the second guiding hole, respectively,
the second guiding hole extending in the crosswise direction;

wherein
each of the n first guiding members guides the m spotting heads in the lengthwise direction;
each of the m second guiding members guides the n spotting heads in the crosswise direction;
the n first guiding members are movably held in the crosswise direction, respectively;
the m second guiding members are movably held in the length wise direction, respectively; and
the m spotting heads which are inserted into one of the n first guiding members are inserted into intersection portions between
the m second guiding members and the one of the n first guiding members, respectively, such that movements of the m spotting
heads in the lengthwise and crosswise directions are restricted;

wherein the pitch varying mechanism is capable of
changing the pitch between the n first guiding members causes a variation of the array pitch of the plurality of spotting
heads arranged in the crosswise direction; and

changing the pitch between the m second guiding members causes a variation of the array pitch of the plurality of spotting
heads arranged in the lengthwise direction,

wherein
a movement of the entire n first guiding members arranged in the crosswise direction causes a displacement of the entire plurality
of the spotting heads arranged in the crosswise direction; and

a movement of the entire m second guiding members arranged in the lengthwise direction causes a displacement of the entire
plurality of the spotting heads arrayed in the lengthwise direction.

US Pat. No. 9,279,809

CELL DIFFERENTIATION ASSAY METHOD, CELL ISOLATION METHOD, METHOD FOR PRODUCING INDUCED PLURIPOTENT STEM CELLS, AND METHOD FOR PRODUCING DIFFERENTIATED CELLS

NATIONAL INSTITUTE OF ADV...

1. A method for determining differentiation of a cell comprising:
a step of contacting a test cell with a probe comprising a protein (A) or (B) below and
a step of detecting the presence of binding of the probe to the test cell:
(A) a protein comprising an amino acid sequence shown in SEQ ID NO: 1 and recognizing a sugar chain structure of “Fuc?1-2Gal?1-3GlcNAc”
and/or “Fuc?1-2Gal?1-3GlcNAc;” and

(B) a protein comprising an amino acid sequence in which one or two amino acids in the amino acid sequence shown in SEQ ID
NO: 1 are deleted, substituted, inserted, or added, and recognizing a sugar chain structure of “Fuc?1-2Gal?1-3GlcNAc” and/or
“Fuc?1-2Gal?1-3GalNAc;”

wherein binding of the probe to the test cell indicates an undifferentiated state.

US Pat. No. 9,163,663

ROTATING SHAFT HOLDING MECHANISM AND ROTATIONAL VISCOMETER WITH SAME

National Institute of Adv...

1. A rotating shaft holding mechanism including a plurality of parallel spring links,
each of the plurality of parallel spring links comprising:
a movable side connected to a rotating shaft by a hinge at a connection point at a distance h radially away from a center
of rotation of the rotating shaft;

a plurality of deformable sides which are parallel to each other;
hinges each of which connects one end of a corresponding one of the deformable sides to the movable side; and
hinges each of which connects the other end of a corresponding one of the deformable sides to the stationary section,
the effective length of each of the deformable sides being set to h to permit the rotating shaft, which is connected to the
movable side by the hinge at the connecting point at the distance h radially away from the center of rotation of the rotating
shaft, to rotate within a range of finite angles,

the plurality of parallel spring links comprising at least two parallel spring links oriented in different directions.

US Pat. No. 9,142,579

PHOTOELECTRIC CONVERSION CELL AND ARRAY, RESET CIRCUIT AND ELECTRICAL SIGNAL SENSE CONTROL CIRCUIT THEREFOR

NATIONAL INSTITUTE OF ADV...

1. A photoelectric conversion cell comprising, at least,
a photoelectric conversion element having an amplification function, and
a first transistor,
wherein the photoelectric conversion element includes a first electrical signal output section and a second electrical signal
output section,

wherein the first transistor includes a first output section, a second output section, and a third control section that controls
a current flowing between the first output section and the second output section or resistance between the first output section
and the second output section,

wherein the second electrical signal output section of the photoelectric conversion element has to the first electrical signal
output section a potential difference polarity that permits conduction of an electrical signal current from or to the first
electrical signal output section and another potential difference polarity that permits less conduction of the electrical
signal current from or to the first electrical signal output section,

wherein the current flowing between the first output section and the second output section or the resistance between the first
output section and the second output section is mainly controlled by a voltage or a current between the third control section
and the second output section,

wherein the second electrical signal output section is connected to the second output section, and the first output section
serves as a first cell output section,

wherein the third control section serves as a first cell selection section, and
wherein an electrical signal of the photoelectric conversion cell is read from the first cell output section by driving the
first cell selection section to a potential direction of the potential difference polarity that permits conduction of the
electrical signal current, and the electrical signal of the photoelectric conversion cell is blocked from the first cell output
section by driving the first cell selection section to a direction opposite to the potential direction of the potential difference
polarity that permits conduction of the electrical signal current.

US Pat. No. 9,389,068

METHOD AND DEVICE FOR ANALYSING PHASE DISTRIBUTION OF FRINGE IMAGE USING HIGH-DIMENSIONAL INTENSITY INFORMATION, AND PROGRAM FOR THE SAME

NATIONAL INSTITUTE OF ADV...

1. A method for analyzing a phase distribution of a fringe image that calculates a phase distribution of a fringe image obtained
by capturing a fringe pattern on a surface of an object using an optical digital camera comprising an imaging element arranged
in a horizontal direction and a vertical direction, the method comprising:
a step of obtaining one two-dimensional fringe image or a three-dimensional fringe image in which a plurality of two-dimensional
fringe images are arranged in time series by capturing one image of the fringe pattern on the surface of the object or a plurality
of images of the fringe pattern while shifting a temporal phase;

a step of generating a plurality of phase-shifted moiré fringe images by performing at least a thinning-out process on intensity
data of the one two-dimensional fringe image or the three-dimensional fringe image;

a step of calculating a phase distribution of the moiré fringe images in the horizontal direction or the vertical direction
by using fast Fourier transform or discrete Fourier transform on the phase-shifted moiré fringe images by a calculator; and

step of calculating the phase distribution of the fringe pattern image on the object by adding a phase value of a thinning-out
point in the thinning-out process to a value of each point in the phase distribution by the calculator.

US Pat. No. 9,383,624

REFLECTION-TYPE OPTICAL CONTROL ELEMENT

National Institute of Adv...

1. A reflection-type optical control element, comprising:
an optical control layer whose state is reversibly changed between a transparent state caused by hydrogenation and a reflective
state caused by dehydrogenation;

a catalyst layer that accelerates the hydrogenation and the dehydrogenation in the optical control layer; and
an oxidation inhibition part that is arranged between the optical control layer and the catalyst layer and inhibits oxidation
of the optical control layer that is caused by oxygen that permeates through the catalyst layer.

US Pat. No. 9,187,842

ORIENTED PEROVSKITE OXIDE THIN FILM

National Institute of Adv...

1. A method of manufacturing an oriented Dion-Jacobson perovskite-type oxide thin film, the method comprising the steps of:
forming a thin film comprising an organic metal salt or an alkoxide salt or an amorphous thin film on a substrate, wherein
the thin film or the amorphous thin film can form a perovskite-type oxide called a Dion-Jacobson phase represented by the
composition formula A(B Mn?1O3n+1)(wherein n is a natural number of 2 or greater; A represents one or more monovalent cations selected from Na, K, Rb and Cs;
B comprises one or more components selected from a trivalent rare earth ion, Bi, a divalent alkaline earth metal ion and a
monovalent alkali metal ion; M comprises one or more of Nb and Ta; Ti, Zr may be solid soluted); maintaining temperature between
room temperature and 600° C.; allowing a crystal to grow while irradiating the amorphous thin film or the thin film comprising
the organic metal salt or the alkoxide salt on the substrate with ultraviolet light, thereby obtaining an oriented structure
in a (001) direction which is a layered direction where A site cations are regularly aligned in layers on the substrate.

US Pat. No. 9,145,564

PERSISTENTLY INFECTIVE SENDAI VIRUS VECTOR

National Institute of Adv...

1. A recombinant Sendai virus genome, comprising: a mutated L gene which encodes a mutated L protein of a persistently non-infective
Sendai virus, in which mutated L protein an amino acid residue at position-1088 is serine, an amino acid residue at position-1169
is threonine, an amino acid residue at position-1207 is cysteine, an amino acid residue at position-1618 is valine, and an
amino acid residue at position-1664 is isoleucine; an NP gene of the persistently non-infective Sendai virus; a P gene of
the persistently non-infective Sendai virus; and the recombinant Sendai virus genome lacking (A) an HN gene and (B) at least
one of an M gene and an F gene, wherein a transcription termination sequence is added to the 3? terminus of a leader RNA sequence
of a Sendai virus.

US Pat. No. 9,123,463

MAGNETIC TUNNEL JUNCTION DEVICE

JAPAN SCIENCE AND TECHNOL...

1. A tunnel barrier layer disposed on a ferromagnetic material layer that is disposed on a substrate,
wherein the tunnel barrier layer comprises a poly-crystalline magnesium oxide layer in which a (001) crystal plane is preferentially
oriented,

wherein the tunnel barrier layer has a barrier height ? in a range of 0.2 to 0.5 e V, where the barrier height ? is obtained
by fitting J-V characteristics of a tunnel barrier junction structure to an equation (1):

J=[(2m?)1/2/?s](e/h)2×exp[?(4??s/h)×(2m?)1/2]×V  (1)

where J is a tunnel current density flowing through the tunnel barrier layer, V is an applied bias voltage that is 100 mV
or smaller, m is the free electron mass, e is the elementary electric charge, h is the Plank's constant, ?s is an effective
thickness of the tunnel barrier layer that is approximately equivalent to (tMgO?0.5 nm), and tMgO is an actual thickness of the tunnel barrier layer determined using a cross-sectional transmission electron microscope image,
and

wherein the ferromagnetic material layer comprises CoFeB alloy that is at least partially crystallized.

US Pat. No. 9,227,178

CATALYST FOR GENERATING HYDROGEN AND METHOD FOR GENERATING HYDROGEN

NATIONAL INSTITUTE OF ADV...

1. A method for generating hydrogen comprising contacting a catalyst for generating hydrogen with at least one compound selected
from the group consisting of hydrazine and a hydrate thereof, wherein the catalyst is an alloy represented by Ni(1-x)Ptx(x=0.07 to 0.55).

US Pat. No. 9,132,381

HYDROGEN SEPARATION DEVICE

NATIONAL INSTITUTE OF ADV...

1. A hydrogen separation device comprising:
a laminate formed by laminating and integrating (i) a hydrogen separation layer having a hydrogen-permeable part for selectively
transmitting hydrogen, (ii) a mixed gas layer kept adjacent to one surface of the hydrogen separation layer and having a mixed
gas flow path in a hydrogen-permeable part-corresponding region where a hydrogen-containing gas runs and a seal part to surround
the entire periphery of the mixed gas flow path exposed on the surface to be in airtight contact with the hydrogen separation
layer, and (iii) a transmitted gas layer kept adjacent to the other surface of the hydrogen separation layer and having a
transmitted gas flow path in a hydrogen-permeable part-corresponding region where hydrogen having passed through the hydrogen
separation layer runs and a seal part to surround the entire periphery of the transmitted gas flow path exposed on the surface
to be in airtight contact with the hydrogen separation layer, and

a vessel containing the laminate therein and filled with a buffer gas:
wherein a buffer space is provided between the laminate and an inner wall of the vessel in which a buffer gas can reach at
least one end face of the laminate in the lamination direction,

the pressure in the buffer space is equal to or higher than the higher one of the pressure in the mixed gas flow path and
the pressure in the transmitted gas flow path,

a seal part of the hydrogen separation layer, the seal part of the mixed gas layer, and the seal part of the transmitted gas
layer are disposed so as to surround the entire periphery of each of the hydrogen separation layer, the mixed gas layer, and
the transmitted gas layer, and

the seal part of the mixed gas layer and the seal part of the transmitted gas layer are flat for sealing.

US Pat. No. 9,070,941

NEGATIVE ELECTRODE MATERIAL FOR LITHIUM SECONDARY BATTERY AND ITS MANUFACTURING METHOD, AND NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY

National Institute of Adv...

1. A negative electrode material for a lithium secondary battery comprising sulfide glass, including sulfur and the following
components (i) and (ii):
(i) at least one or more elements selected from a group consisting of Sb, Bi, Ge, Cu, and Zn; and
(ii) the element Sn,
wherein the ratio in said sulfide glass is sulfur: 40-80 mol %, (i): 1-50 mol % and (ii) 1-50 mol %, respectively.

US Pat. No. 9,368,103

ESTIMATION SYSTEM OF SPECTRAL ENVELOPES AND GROUP DELAYS FOR SOUND ANALYSIS AND SYNTHESIS, AND AUDIO SIGNAL SYNTHESIS SYSTEM

NATIONAL INSTITUTE OF ADV...

1. An estimation system of spectral envelopes and group delays for sound analysis and synthesis comprising at least one processor
operable to function as:
a fundamental frequency estimation section configured to estimate F0s from an audio signal at all points of time or at all points of sampling;

an amplitude spectrum acquisition section configured to divide the audio signal into a plurality of frames, centering on each
point of time or each point of sampling, by using a window having a window length changing with F0 at each point of time or each point of sampling, to perform Discrete Fourier Transform (DFT) analysis on the plurality of
frames of the audio signal, and thus to acquire amplitude spectra at the respective frames;

a group delay extraction section configured to extract group delays as phase frequency differentials at the respective frames
by performing a group delay extraction algorithm accompanied by DFT analysis on the plurality of frames of the audio signal;

a spectral envelope integration section configured to obtain overlapped spectra at a predetermined time interval by overlapping
the amplitude spectra corresponding to the frames included in a certain period determined based on a fundamental period of
F0, and to average the overlapped spectra to sequentially obtain a spectral envelope for sound synthesis; and

a group delay integration section configured to select a group delay corresponding to a maximum envelope for each frequency
component of the spectral envelope from the group delays at a predetermined time interval, and to integrate the thus selected
group delays to sequentially obtain a group delay for sound synthesis.

US Pat. No. 9,365,815

PARTICLE SEPARATION DEVICE AND METHOD OF SEPARATING PARTICLES

NATIONAL INSTITUTE OF ADV...

1. A particle separation device comprising at least:
a separation flow path (i) to which a separation fluid containing a particle group including two types of particles being
different in density is supplied, and (ii) through which the separation fluid flows in a certain direction;

a divergence section connected to at least an end of the separation flow path in the certain direction in which the separation
fluid flows,

a first flow path formed from the divergence section in a rising direction;
a second flow path formed from the divergence section in a falling direction;
a first pool for collecting the separation fluid containing the particle group which flows through the first flow path; and
a second pool for collecting the separation fluid containing the particle group which flows through the second flow path,
wherein the separation flow path is formed in a horizontal direction, and
wherein the divergence section has a plane double-layer Y structure wherein the first flow path and the second flow path are:
(i) provided in two layers, respectively; (ii) branched to form a Y shape; and (iii) parallel to a maximum surface of a chip
included in the particle separation device.

US Pat. No. 9,273,331

PROCESS FOR PRODUCING 3-HYDROXYBUTYRIC ACID OR SALT THEREOF

National Institute of Adv...

1. A process for producing 3-hydroxybutyric acid or a salt thereof, the process comprising the following steps (1) to (3):
(1) step 1 of culturing one or more halophilic bacteria belonging to the genus Halomonas under aerobic conditions in a medium containing an inorganic salt and one or more organic carbon sources;

(2) step 2 of changing the culture conditions in step 1 from aerobic culture to microaerobic culture, and culturing bacterial
cells of the halophilic bacteria to produce 3-hydroxybutyric acid or a salt thereof that is secreted from the bacterial cells
into a culture medium; and

(3) step 3 of collecting the 3-hydroxybutyric acid or the salt thereof from the culture medium obtained in step 2.

US Pat. No. 9,171,437

HAPTIC INFORMATION PRESENTATION SYSTEM AND METHOD

National Institute of Adv...

46. A haptic information processing device comprising:
a display member;
a sensor that detects at least one operation of a finger of an operator, a palm of the operator, a hand of the operator, a
leg of the operator, a head of the operator, a body of the operator, an operation device, and a man-machine interface, which
operates a virtual object which presents a haptic sensation on a surface of the display member;

a control device that controls a motion of the virtual object from detection information from the sensor;
a haptic information presentation device that presents haptic information comprising illusion as if the operator operates
a real object, from the detection information from the sensor by applying a haptic sensory characteristic of the operator
to the virtual object; and

a transmitter and/or a receiver that perform transmission and/or reception of the haptic information,
wherein the haptic sensory characteristic comprises:
(i) one or more of a physical quantity being given to the operator and a physical quantity being brought by the operation
of the operator, and a sensory quantity to be presented to the operator, or

(ii) a sensory quantity to be presented to the operator,
wherein the haptic sensory characteristic is obtained by using at least one of a nonlinear characteristic, a hysteresis characteristic,
a masking characteristic relating to a haptic sense, a threshold characteristic, and muscle reflection,

wherein the physical quantity comprises a plurality of physical quantities corresponding to a plurality of operation points,
and the plurality of operation points on a curve representing the relationship of the haptic sensory characteristic are utilized,
and/or the physical quantity is obtained by setting each of operation points on a curve representing the relationship of the
haptic sensory characteristic and each operation duration time on each of operation points.

US Pat. No. 9,249,445

CELL DETECTION METHOD, AND MICROARRAY CHIP FOR USE IN THE METHOD

NATIONAL INSTITUTE OF ADV...

1. A method for detecting a specific cell in a sample containing multiple cells,
the method comprising the steps of:
(1) retaining sample cells in a microarray chip provided with multiple microchambers and capable of containing multiple cells
in each microchamber,

wherein the microarray chip has a surface that has a water contact angle of 10° or less and the surface of the microarray
chip includes the inner surface of the microchambers,

and wherein the microchambers have an inner diameter-to-depth ratio of 1:0.35 to 0.85 and an inner diameter of from 20 to
500 ?m, sample cells are capable of forming a monolayer at the bottom of each microchamber, and the microchamber can contain
at least two cells; and

(2) detecting a labeled specific cell in the cells retained in the microarray chip, wherein the labeled specific cell is labeled
after the step (1), or the labeled specific cell is labeled prior to the step (1).

US Pat. No. 9,202,962

SOLID STATE IMAGING DEVICE AND FABRICATION METHOD FOR THE SAME

Rohm Co., Ltd., Kyoto (J...

1. A fabrication method of a solid state imaging device which a circuit unit on a substrate, a lower electrode layer, a compound
semiconductor thin film of chalcopyrite structure that functions as an optical absorption layer, and an optical transparent
electrode layer are laminated to be composed, the fabrication method comprising:
forming the circuit unit on the substrate;
forming the lower electrode layer on the substrate on which the circuit unit is formed;
patterning the lower electrode layer by photo lithography, and separating for every pixel,
forming the compound semiconductor thin film of the chalcopyrite structure all over an element region; and
patterning the compound semiconductor thin film of the chalcopyrite structure by photo lithography, and separating for every
pixel according to the separated underlying lower electrode layer, wherein patterning the compound semiconductor thin film
of the chalcopyrite structure includes:

a first step of patterning by dry etching; and
a second step of removing, by wet etching, an etching residue produced at the first step.

US Pat. No. 9,435,946

INTERLAYER LIGHT WAVE COUPLING DEVICE

NATIONAL INSTITUTE OF ADV...

1. An interlayer light wave coupling device comprising: a substrate; a first core disposed on the substrate, the first core
having a first acute structure and comprising hydrogenated amorphous silicon; a third core spatially set apart from the first
core, the third core having a second acute structure and comprising hydrogenated amorphous silicon; and a second core disposed
between the first core and the third core and having a smaller index of refraction than the first core and the third core,
the first acute structure and the second acute structure being disposed so as to have no overlap as viewed from above, and
wherein the acute structure has a sloped sidewall at least on one side.

US Pat. No. 9,365,709

PLANT DERIVED PLASTIC BLEND AND A METHOD OF MANUFACTURING THE SAME

NATIONAL INSTITUTE OF ADV...

1. A plant derived plastic blend comprising:
10 wt % or more and 90 wt % or less of a plant derived high density polyethylene and 10 wt % or more and 90 wt % or less of
a plant derived polylactic acid to achieve a total of 100 wt %; and

further containing 1 wt % or more and 20 wt % or less of a compatibilizing agent,
wherein a modulus of elongation of the plant derived plastic blend is 950 MPa or more and a breaking elongation of 4% or more,
and

wherein a proportion being 1 ?m or less of a domain size of the plant derived polylactic acid is 60% or more in the case where
the plant derived high density polyethylene is a matrix, and a proportion being 1 ?m or less of a domain size of the plant
derived high density polyethylene is 40% or more in the case where the plant derived polylactic acid is a matrix.

US Pat. No. 9,410,241

METHOD FOR SEPARATING SURFACE LAYER OR GROWTH LAYER OF DIAMOND

NATIONAL INSTITUTE OF ADV...

1. A method for separating a surface layer of a diamond, comprising:
implanting ions into a diamond to form a non-diamond layer near a surface of the diamond; and
etching the non-diamond layer in the diamond by applying an alternating-current voltage across electrodes in pure water,
wherein the electric field strength of the alternating-current voltage applied across the electrodes is from about 500 to
about 10,000 v/cm.

US Pat. No. 9,831,416

PIEZOELECTRIC MEMBER THAT ACHIEVES HIGH SOUND SPEED, ACOUSTIC WAVE APPARATUS, AND PIEZOELECTRIC MEMBER MANUFACTURING METHOD

MURATA MANUFACTURING CO.,...

1. A piezoelectric member comprising:
a silicon-containing substrate; and
a piezoelectric layer disposed on the silicon-containing substrate; wherein
at least a surface layer of the piezoelectric layer on a side opposite to the silicon-containing substrate is made of BxAl1-xN, wherein 0
a portion of the piezoelectric layer made of BxAl1-xN contains a wurtzite-type crystal of BxAl1-xN, and

the portion of the piezoelectric layer made of BxAl1-xN is C-axis oriented so that a (0001) plane is parallel to a surface of the silicon-containing substrate.

US Pat. No. 9,376,854

GASOCHROMIC SYSTEM

National Institute of Adv...

1. A gasochromic system, comprising:
a first transparent part that includes a first surface;
a second transparent part that includes a second surface and is disposed such that the second surface faces the first surface
of the first transparent part;

a light control part that is formed on the first surface and includes a light control element whose optical characteristic
is reversibly changed by hydrogenation and dehydrogenation;

a hydrogen supplier that supplies a hydrogen-containing gas into a gap between the first and second transparent parts; and
a dehydrogenator that removes hydrogen from the gap between the first and second transparent parts,
wherein the first and second transparent parts are stacked via the light control part, and the second surface and a surface
of the light control part facing the second surface are partially in contact with each other.

US Pat. No. 9,269,534

SAMPLE HOLDER AND METHOD FOR OBSERVING ELECTRON MICROSCOPIC IMAGE

NATIONAL INSTITUTE OF ADV...

1. A sample holder used for observing an electron microscopic image, comprising:
a laminate of a secondary electron emission protective thin film and an insulative thin film, the laminate having an electron-beam-incident
surface on a side of the secondary electron emission protective thin film having a low secondary electron emission coefficient
? and a sample adhesion surface on a side of the insulative thin film; and a conductive thin film facing but being separated
from the insulative thin film,

wherein a potential of the conductive thin film can be controlled to a same potential as a ground potential of an electron
microscope or to a plus potential.

US Pat. No. 9,234,970

PORTABLE RADIATION DOSIMETER

National Institute of Adv...

1. A portable radiation dosimeter comprising a radiation detection element, the dosimeter being configured to measure and
record a radiation exposure dose from a detection output of the radiation detection element, further comprising:
a LED configured to issue a warning to a user when a radiation exposure dose or a radiation dose rate exceeds a predetermined
threshold, the LED being placed opposite a light-emitting/receiving unit of an electrical non-contact input device that is
provided in a radiation dose management device with a display device, and being used to transmit and receive recorded radiation
dose data and a command or data transmitted from the non-contact input device.

US Pat. No. 9,197,220

METHOD FOR RESETTING PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE

National Institute of Adv...

1. A photoelectric conversion device comprising:
a first semiconductor region of a first conductivity type;
a second semiconductor region of an opposite conductivity type opposite to the first conductivity type that is in contact
with the first semiconductor region;

a third semiconductor region of the opposite conductivity type that is separate from the second semiconductor region, and
is in contact with the first semiconductor region;

a fifth semiconductor region of the first conductivity type that is in contact with the second semiconductor region;
a first insulating film that is provide on at least a surface of the first semiconductor region sandwiched between at least
the second and third semiconductor regions; and

a first gate that is provided on the first insulating film across the second and third semiconductor regions,wherein the second semiconductor region, or the first semiconductor region in a vicinity of the second semiconductor region
is illuminated by light, and a photocurrent flows between the second semiconductor region and the first semiconductor region,
and a time in which a first emitter potential is supplied to the fifth semiconductor region overlaps with a time in which
a base reset potential is supplied to the third semiconductor region and a first gate potential that induces a channel or
a current path on the surface of the first semiconductor region between the second and third semiconductor regions under the
first gate is supplied to the first gate.
US Pat. No. 9,175,255

METHOD OF SEPARATING CELLS AND SEPARATION APPARATUS

NATIONAL INSTITUTE OF ADV...

1. A cell separation method of selectively separating only target cells in cell samples on a first substrate, each target
cell containing a marker substance, the cell separation method comprising steps of:
inserting a needle-shaped body, on which a substance that selectively binds to the marker substance within each target cell
has been immobilized, into each of the cell samples on the first substrate, thereby causing the marker substance within each
target cell in the cell samples to bind to the needle-shaped body through the immobilized substance that selectively binds
to the marker substance, and then pulling up the needle-shaped body; and

making a binding force between the needle-shaped body and each target cell in the cell samples on the first substrate when
the needle-shaped body has been inserted into the target cell and the marker substance within the target cell has bound to
the needle-shaped body greater than an adhesion force between the first substrate and each of the cell samples on the first
substrate,

wherein in the step of making the binding force between the needle-shaped body and each target cell in the cell samples when
the needle-shaped body has been inserted into the target cell and the marker substance within the target cell has bound to
the needle-shaped body greater than the adhesion force between the first substrate and each of the cell samples on the first
substrate, the adhesion force between the first substrate and each of the cell samples on the first substrate is adjusted
such that an adhesion force is within 500 pN-2 nN when a loading rate of the needle-shaped body, on which the substance that
selectively binds to the marker substance within each target cell has been immobilized, into each of the cell samples on the
first substrate is 0.4 ?N/sec.

US Pat. No. 9,178,243

POROUS SUPPORT FOR ELECTROCHEMICAL REACTION CELL HIGH-DENSITY INTEGRATION, AND ELECTROCHEMICAL REACTION CELL STACK AND ELECTROCHEMICAL REACTION SYSTEM COMPRISING THE POROUS SUPPORT FOR ELECTROCHEMICAL REACTION CELL HIGH-DENSITY IN

National Institute of Adv...

1. An electrochemical reaction cell stack comprising:
a porous support;
through-holes parallelly arrayed in the porous support; and
electrolyte and electrode materials formed on an interior surface of the through-holes,
wherein the porous support is homogeneous as a three dimensional reticulated structure around the through-holes formed by
a gelling agent,

the porous support possesses gas permeability with a porosity of 15 to 47% and functions as air paths for permeating an air
therethrough,

the through-holes are through-holes A extending through the porous support and the porous support has no other through-holes
parallelly arrayed therein,

each of the through-holes A has a diameter of 0.4 to 0.8 mm,
the porous support comprises an air electrode material,
a layer of electrolyte material is coated onto an interior surface of each of the through-holes A,
a layer of fuel electrode material is formed on a surface of the layer of the electrolyte material in each of the through-holes
A, and

each of the through-holes A functions as fuel channel for infusing a fuel gas thereinto.

US Pat. No. 9,464,896

DEVICE FOR MEASURING ROTATION ANGLE ACCELERATION

NATIONAL INSTITUTE OF ADV...

1. A device for measuring an angular acceleration acting on the device, the device comprising:
an oscillator rotating around a rotating shaft as a center;
a plurality of nodes for supporting the oscillator, the plurality of nodes each being provided at a point on a circle whose
radius is r and whose center is the rotating shaft;

a plurality of parallelogram hinges each having a pair of parallel arms whose length is r and a coupling arm connecting the
pair of parallel arms, the parallel arms making a movement of the plurality of nodes supporting the oscillator become a circular
movement around the rotating shaft as the center;

wherein a movement of each of the coupling arms is restrained by a plurality of fixed nodes attached to the respective free
ends of the parallel arms of each of the parallelogram hinges;

a supporting section for supporting the fixed nodes of each of the plurality of parallelogram hinges;
a rotation angle detecting sensor for detecting a rotation angle of the rotating oscillator; and
a calculation section for calculating the angular acceleration from the rotation angle.

US Pat. No. 9,337,476

LITHIUM SULFIDE-CARBON COMPLEX, PROCESS FOR PRODUCING THE COMPLEX, AND LITHIUM ION SECONDARY BATTERY UTILIZING THE COMPLEX

NATIONAL INSTITUTE OF ADV...

1. A process for producing a lithium sulfide-carbon composite, the process comprising:
placing a mixture consisting of lithium sulfide and a carbon material having a specific surface area of 60 m2/g or more in an electrically-conductive mold in a non-oxidizing atmosphere; and

applying a pulsed direct current to the mold while pressurizing the mixture in a non-oxidizing atmosphere, thereby subjecting
the lithium sulfide and the carbon material to heating reaction,

wherein lithium sulfide-carbon composite comprises lithium sulfide and a carbon material bonded together, the composite having
a carbon content of 15 to 70 weight %, and a tap density of 0.4 g/cm3 or more when the carbon content is 30 weight % or more, or a tap density of 0.5 g/cm3 or more when the carbon content is less than 30 weight %.

US Pat. No. 9,315,381

DEHYDROGENATION CATALYST FOR FORMIC ACID, METHOD FOR PRODUCING HYDROGEN, AND METHOD FOR PRODUCING HEAVY-HYDROGEN GAS OR HEAVY-HYDROGENATED HYDROGEN

NATIONAL INSTITUTE OF ADV...

1. A catalyst for dehydrogenation of formic acid, comprising:
a multinuclear metal complex represented by the following Formula (1), a tautomer or stereoisomer thereof, or a salt thereof,
wherein
M1 and M2 denote transition metals and may be the same as or different from each other;

Q1 to Q6 each independently denote carbon or nitrogen;

R1 to R6 each independently denote a hydrogen atom, an alkyl group, a phenyl group, a nitro group, a halogen group, a sulfonate group
(sulfo group), a carboxylate group (carboxy group), an alkoxy group, an alkyl amino group, provided that when Qi is nitrogen, Ri is absent at a position corresponding to the nitrogen;

L1 and L2 each independently denote a cyclopentadienyl ligand or a benzene ligand, and may be unsubstituted or substituted by one or
more substituents;

Y1 and Y2 each independently denote any ligand or are absent; and

m denotes a positive integer, 0, or a negative integer.

US Pat. No. 9,248,576

DIRECT ACTING EXTENSIBLE AND RETRACTABLE ARM MECHANISM, AND ROBOT ARM PROVIDED WITH DIRECT ACTING EXTENSIBLE AND RETRACTABLE ARM MECHANISM

National Institute of Adv...

1. A direct acting extensible and retractable arm mechanism comprising:
a robot arm supporting member; and
an arm section being extensible and retractable directly from one of ends of the robot arm supporting member, the arm section
being such that a hand section is attachable to one of ends of the arm section,

the arm section being constituted by (i) a first structure group in which a plurality of first structures are coupled with
each other in series in such a manner that adjacent ones of the plurality of first structures are coupled with each other
via a corresponding one of a plurality of first coupling axes in a direction which is orthogonal to a direction of the corresponding
one of the plurality of first coupling axes and (ii) a second structure group in which a plurality of second structures are
coupled with each other in series in such a manner that adjacent ones of the plurality of second structures are coupled with
each other via a corresponding one of a plurality of second coupling axes in a direction which is orthogonal to a direction
of the corresponding one of the plurality of second coupling axes,

the plurality of first structures being identical with each other in width in a direction parallel to the plurality of first
coupling axes,

the plurality of second structures being identical with each other in width in a direction parallel to the plurality of second
coupling axes,

the first structure group and the second structure group being coupled with each other in such a manner that one of two end
first structures of the plurality of first structures, on a side of the hand section, and one of two end second structures
of the plurality of second structures, on the hand section side, are coupled with each other,

the robot arm supporting member including drive means for (i) pressing the first structure group and the second structure
group so that the first structure group and the second structure group become closer to each other and become in contact with
each other, (ii) causing the first structure group and the second structure group to overlap each other so that a surface
of the first structure group and a surface of the second structure group, which surfaces are in contact with each other, do
not slip with respect to each other, and (iii) driving the first structure group and the second structure group in a direction
in which the arm section is extensible,

in a case where the drive means causes the first structure group and the second structure group to overlap each other, the
first structure group and the second structure group forming such a rigid arm section that rotation of each of the plurality
of first structures via the corresponding one of the plurality of first coupling axes and rotation of each of the plurality
of second structures via the corresponding one of the plurality of second coupling axes are prevented,

at least one of the first structure group and the second structure group is such that adjacent ones of structures engage with
each other via their side surfaces, and form a flat surface having no gap, which flat surface faces and is in contact with
a surface of the other one of the first structure group and the second structure group,

the robot arm supporting member including separation means in the robot arm supporting member,
in a case where the drive means carries out reverse driving, the separation means causes the first structure group and the
second structure group to be separated from each other so that (i) each of the plurality of first structures is rotatable
around the corresponding one of the plurality of first coupling axes and (ii) each of the plurality of second structures is
rotatable around the corresponding one of the plurality of second coupling axes, and

in a case where (i) the drive means causes the first structure group and the second structure group to overlap each other
and therefore (ii) the arm section becomes rigid in such a manner that the rotation of each of the plurality of first structures
via the corresponding one of the plurality of first coupling axes and the rotation of each of the plurality of second structures
via the corresponding one of the plurality of second coupling axes are prevented, one of the first structure group and the
second structure group is provided above the other one of the first structure group and the second structure group; and

the one of the first structure group and the second structure group is such that adjacent ones of structures engage with each
other via their side surfaces and forms a flat surface having no gap, which flat surface is opposite to a surface that is
in contact with a surface of the other one of the first structure group and the second structure group.

US Pat. No. 9,281,135

NITROGEN-CONTAINING POROUS CARBON MATERIAL AND METHOD OF PRODUCING THE SAME, AND ELECTRIC DOUBLE-LAYER CAPACITOR USING THE NITROGEN-CONTAINING POROUS CARBON MATERIAL

National Institute of Adv...

1. A nitrogen-containing carbon porous material, comprising nitrogen at a content of 0.5 to 30 mass %, wherein the nitrogen-containing
porous material has a specific surface area of 1,015 to 2,200 m2/g and contains oxygen at a content of 8.7 to 11.4 mass %,
wherein the nitrogen-containing carbon porous material is obtained by mixing and heating a melamine and magnesium citrate
to form a carbon film containing the nitrogen on a carbon skeleton at a circumference of a particle of MgO formed by oxidation
of Mg in the magnesium citrate upon heating, and then removing the MgO.

US Pat. No. 9,200,023

METHOD FOR PRODUCING COMPLEX OF TRISORTHO-METALATED IRIDIUM, LIGHT-EMITTING MATERIAL USING SAID COMPLEX, AND LIGHT-EMITTING ELEMENT

1. A method for producing a complex of tris-orthometallated iridium in which a complex of orthometallated iridium represented
by general formula (chemical formula 47) and a bidentate organic ligand represented by at least one of (7) to (15) in general
formula (chemical formula 10) are reacted as reaction substrates to produce a complex of tris-orthometallated iridium represented
by general formula (chemical formula 6), wherein the method comprises, in order,
a step (1) of preliminarily heating the bidentate organic ligand;
a step (2) of mixing the complex of orthometallated iridium and the bidentate organic ligand; and
a step (3) of reacting the complex of orthometallated iridium and the bidentate organic ligand, the step (3) being carried
out under irradiation of a microwave;

wherein, in general formula (chemical formula 7), X represents a halogen atom; Z1 represents a group of non-metal atoms required for forming a benzene ring or a naphthalene ring; Z2 represents a group of non-metal atoms required for forming a pyridine ring; wherein the ring formed may form a fused ring
with still another ring; L1 represents a single bond; Y1 represents a carbon atom; when Y1 is a carbon atom, Q1 indicates that a carbon atom and Y1 are bonded to each other by a double bond;
wherein in (7) to (17) shown in general formula (chemical formula 10), R4 to R102 each represent a hydrogen atom, a deuterium atom, an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an amino
group, an alkoxy group, an aryloxy group, a heterocyclic-oxy group, an acyl group, an alkoxycarbonyl group, an aryloxycarbonyl
group, an acyloxy group, an acylamino group, an alkoxycarbonylamino group, an aryloxycarbonylamino group, a sulfonylamino
group, a sulfamoyl group, a carbamoyl group, an alkylthio group, an arylthio group, a heterocyclic-thio group, a sulfonyl
group, a sulfinyl group, a ureide group, a phosphoric amide group, a hydroxy group, a mercapto group, a halogen atom, a cyano
group, a sulfo group, a carboxyl group, a nitro group, a trifluoromethyl group, a hydroxamic acid group, a sulfino group,
a hydrazino group, an imino group, a heterocyclic group, a silyl group, or a silyloxy group;


wherein in general formula (chemical formula 6), Z1 represents a group of non-metal atoms required for forming a benzene ring or a naphthalene ring; Z2 represents a group of non-metal atoms required for forming a pyridine ring; wherein the ring formed may form a fused ring
with still another ring; L1 represents a single bond; Y1 represents a carbon atom; when Y1 is a carbon atom, Q1 indicates that a carbon atom and Y1 are bonded to each other by a double bond.

US Pat. No. 9,721,733

METHOD FOR FORMING A DYE-SENSITIZED SOLAR CELL HAVING A POROUS FILM OF AN INORGANIC SUBSTANCE ON A BASE MATERIAL BY SPRAYING DRY FINE PARTICLES OF AN INORGANIC SUBSTANCE ON THE BASE MATERIAL

NATIONAL INSTITUTE OF ADV...

1. A method for forming a porous film of an inorganic substance on a base material by spraying dry fine particles of an inorganic
substance on the base material such that the fine particles are bonded to the base material and bonded to one another, the
spraying being performed by an aerosol deposition method in which the dry fine particles are accelerated by using a carrier
gas and sprayed onto the base material,
wherein:
the dry fine particles include at least two kinds of fine particles, which are small-size particles and large-size particles
having different average particle sizes;

an average particle size r of the small-size particles satisfies 1 nm?r<200 nm, and an average particle size R of the large-size
particles satisfies 0.2 ?m?R?100 ?m;

a mixing ratio of the small-size particles to the large-size particles in the dry fine particles to be sprayed on the base
material is 0.5:99.5 to 50:50 (parts by weight); and

the speed of the dry fine particles accelerated by the carrier gas is 10 m/s to 650 m/s.

US Pat. No. 9,500,650

UNDIFFERENTIATED CELL DETECTION METHOD AND COMPLEX CARBOHYDRATE DETECTION METHOD

NATIONAL INSTITUTE OF ADV...

1. A method of determining whether stem cells in a culture are completely differentiated or not, comprising:
(1) obtaining a culture supernatant from the culture of the stem cells; and
(2) measuring the presence or absence of an undifferentiation sugar chain marker represented by:
(i) formula 1:
wherein R1 represents an OH group or any sugar chain and R2 represents an OH group or any sugar chain, protein, lipid, or
another molecule, or
(ii) formula 2:
wherein R1 represents an OH group or any sugar chain and R2 represents an OH group or any sugar chain, protein, lipid, or
another molecule,in the culture supernatant, in comparison to a culture supernatant from a completely differentiated stem cell negative control,
wherein the presence or absence of the undifferentiation sugar chain marker is measured using a recombinant recognition protein
comprising the amino acid sequence consisting of SEQ ID NO: 1 or the amino acid sequence consisting of SEQ ID NO: 1 in which
one amino acid is deleted, substituted, inserted, or added, and specifically recognizing the sugar chain structure represented
by the formula 1 or 2.

US Pat. No. 10,053,479

RAW MATERIAL AND PRODUCTION METHOD FOR CYCLOMETALATED IRIDIUM COMPLEX

TANAKA KIKINZOKU KOGYO K....

1. A method for producing a cyclometalated iridium complex, comprising the step of reacting a raw material for a cyclometalated iridium complex including an organic iridium material and one or more aromatic heterocyclic bidentate ligand of Chemical Formula 2 in a solvent having a boiling point at normal pressure of 160° C. to 300° C., wherein the reaction temperature is 100° C. to 300° C., thereby producing a facial isomer of any one of triscyclometalated iridium complex of Chemical Formula 3, in which three aromatic heterocyclic bidentate ligands are coordinated to the iridium atom,wherein the raw material comprises an organic iridium material which is a tris(?-diketonato)iridium(III) represented by Chemical Formula 1, in which an asymmetric ?-diketone is coordinated to iridium,


wherein in Chemical Formula 1, O represents an oxygen atom; Ra and Rb are each an alkyl group of C1-5, and Ra and Rb are not the same; either Ra or Rb is a methyl group; and Rc is a hydrogen atom, and wherein in Chemical Formula 2, R1 to R48 each represent a hydrogen atom, an alkyl group, an aryl group, or a halogen atom; and * indicates a site of bonding to iridium.

US Pat. No. 9,276,067

SIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

National Institute of Adv...

1. An SiC semiconductor device comprising:
a p-type 4H—SiC region formed on a first part of a surface portion of an SiC substrate,
a defect reduction layer formed in a surface portion of the p-type 4H—SiC region, the defect reduction layer having C defect
density that is defined by Cdef={[Si density]+[p-type dopant density]?[C density]} and is set to Cdef<1015 cm?3 by introduction of carbon, a thickness of the defect reduction layer being equal to or less than 5 nm,

a gate insulating film formed on the defect reduction layer, and
a gate electrode formed on the gate insulating film,
wherein the defect reduction layer and a second part of the surface portion of the SiC substrate are both in direct physical
contact with the gate insulating film, the second part of the surface portion of the SiC substrate being different from the
first part of the surface portion of the SiC substrate, and

wherein the defect reduction layer comprises a channel of an n-type metal oxide semiconductor field effect transistor (MOSFET)
which includes the gate insulating film and the gate electrode.

US Pat. No. 9,112,035

SEMICONDUCTOR SUBSTRATE, FIELD-EFFECT TRANSISTOR, INTEGRATED CIRCUIT, AND METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE

SUMITOMO CHEMICAL COMPANY...

1. A semiconductor substrate comprising:
a substrate;
an insulating layer over and in direct mechanical contact with the substrate, the insulating layer being made of an amorphous
metal oxide; and

a semiconductor layer having a first surface, the semiconductor layer being over and in direct mechanical contact at the first
surface with the insulating layer, the semiconductor layer being formed by crystal growth, the crystal growth occurring from
a second surface of the semiconductor layer opposite to the first surface of the semiconductor layer in contact with the insulating
layer, wherein the substrate is made of Si, the semiconductor layer is made of InGaAs, and the second surface of the semiconductor
layer has a flat and specular surface.

US Pat. No. 9,238,713

2-PYRROLIDONE POLYMER OR COPOLYMER HAVING MODIFIED PHYSICAL PROPERTIES, AND MANUFACTURING METHOD FOR SAME

NATIONAL INSTITUTE OF ADV...

1. A 2-pyrrolidone polymer or copolymer having methylol groups and having a branched structure,
wherein the degree of methylolation of the polymer is 4 to 50%.

US Pat. No. 9,494,553

ELECTROPHORESIS CHIP, ELECTROPHORESIS APPARATUS, AND METHOD FOR ANALYZING SAMPLE BY CAPILLARY ELECTROPHORESIS

National Institute of Adv...

1. A method for analyzing a sample according to a capillary electrophoresis method using an electrophoresis chip, wherein
the electrophoresis chip comprises
a substrate,
an introduction reservoir,
a recovery reservoir and
a capillary channel,
the capillary channel comprising a capillary channel for sample analysis,
the introduction reservoir and the recovery reservoir being formed in the substrate,
the introduction reservoir and the recovery reservoir being in communication with each other via the capillary channel for
sample analysis, and

the introduction reservoir receiving a sample to be analyzed,
the method comprising:
an introduction step of introducing the sample into the introduction reservoir,
where the sample is diluted with an electrophoresis running buffer and then introduced into the introduction reservoir, and
the sample: the electrophoresis running buffer volume ratio is in a range of 1:4 to 1:99, and

an analysis step of electrophoretically introducing the sample directly into the capillary channel for sample analysis by
creating a potential difference between the introduction reservoir and the recovery reservoir, and also analyzing the sample
in the capillary channel during separation of the sample while the sample is being continuously supplied to the capillary
channel for sample analysis,

wherein, in the analysis step, the analysis of the sample is carried out by arithmetic processing of an absorbance of the
sample, the sample containing at least glycosylated hemoglobin or glucose, where the arithmetic processing is differential
processing to give a pherogram, and the proportion of a component in the sample is obtained by obtaining at least a peak area
in the pherogram.

US Pat. No. 9,224,460

SOLID MEMORY

NATIONAL INSTITUTE OF ADV...

1. A method for recording data in a solid memory, comprising:
recording data in the solid memory by causing phase-separation of a substance constituting the solid memory so as to change
electric characteristics of the solid memory, the substance including a laminated structure of alternating thin film layers
forming artificial superlattices, the alternating thin film layers including a first thin film layer and a second thin film
layer, the first thin film layer being a binary alloy.

US Pat. No. 9,178,393

MULTIPLE POLE SPHERICAL STEPPING MOTOR AND MULTIPLE POLE SPHERICAL AC SERVO MOTOR

National Institute of Adv...

1. A multiple pole spherical stepping motor comprising:
a rotor with N-pole permanent magnets disposed at vertexes of a virtual regular tetrahedron inscribed in a sphere and S-pole
permanent magnets disposed at midpoints of arcs corresponding to sides connecting the vertexes; and

a stator with electromagnets disposed at vertexes of a virtual regular tetrahedron inscribed in a sphere containing the sphere
of the rotor and at trisecting points of arcs corresponding to sides connecting the vertexes.

US Pat. No. 9,096,440

METHOD OF PRODUCING SUPERCONDUCTIVE OXIDE MATERIAL

NATIONAL INSTITUTE OF ADV...

1. A method of producing a superconductive material, comprising the steps of:
providing a solution of an organic compound of metals whose oxides form a super conductive material;
applying the solution onto a surface of a support body;
irradiating a surface of the support body opposite to the surface on which the solution was applied with a laser light;
conducting a provisional baking step to cause organic components of the organic compound to undergo thermal decomposition
and form oxides of the metals; and

conducting a main baking step to cause the oxides of the metals to transform into the superconductive material and produce
an epitaxially-grown superconductive coating material,

wherein the support body is a single crystal substrate selected from the group consisting of a LaAlO3 substrate, a SrTiO3 substrate, a NdGaO3 substrate and a YAlO3 substrate or a single crystal substrate, selected from the group consisting of an Al2O3 substrate, a yttria-stabilized zirconia substrate, a MgO substrate, a LaAlO3 substrate, a SrTiO3 substrate, a NdGaO3 substrate and a YAlO3 substrate, having a CeO2 buffer layer formed thereon.

US Pat. No. 9,272,289

METHOD AND MATERIAL FOR INEXPENSIVELY SEPARATING CARBON NANOTUBES, AND SEPARATION VESSEL

NATIONAL INSTITUTE OF ADV...

1. A method for separating metallic carbon nanotubes and semiconducting carbon nanotubes,
the method comprising:
adding a carbon nanotube dispersion containing the semiconducting carbon nanotubes and the metallic carbon nanotubes to a
separation material formed of an agar powder or an agarose powder;

causing a separation liquid to act on the separation material to elute the metallic carbon nanotubes unadsorbed to the separation
material and separate the metallic carbon nanotubes from the semiconducting carbon nanotubes adsorbed to the separation material;
and

causing an eluant to act on the separation material to elute the semiconducting carbon nanotubes from the separation material.

US Pat. No. 9,160,035

LITHIUM ION CONDUCTIVE SUBSTANCE, LITHIUM ION CONDUCTIVE SOLID ELECTROLYTE USING THE LITHIUM ION CONDUCTIVE SUBSTANCE, PROTECTIVE LAYER FOR AN ELECTRODE OF A LITHIUM ION BATTERY, AND METHOD FOR MANUFACTURING THE LITHIUM ION CONDUC

National Institute of Adv...

1. A method for manufacturing a lithium ion conductive substance, comprising:
providing an inorganic substance that includes a Li component, an Al component, a Ti component, a Si component, and a P component
in such a manner that the inorganic substance as expressed in oxide equivalent includes 15 to 30 mol % of Li2O, 1 to 10 mol % of Al2O3, 30 to 45 mol % of TiO2, 1 to 10 mol % of SiO2, and 22 to 40 mol % of P2O5;

forming the inorganic substance into a sheet shape to obtain a sheet-shaped body,
interposing the sheet-shaped body between materials including at least one element selected from the group consisting of Zr,
Hf, Y, and Sm; and

sintering the sheet-shaped body,
wherein a content(s) of the Al component and/or the Si component in the inorganic substance is greater than a stoichiometric
composition ratio(s) of the Al component and/or the Si component in the lithium ion conductive substance.

US Pat. No. 9,059,410

LIQUID CRYSTALLINE ORGANIC SEMICONDUCTOR MATERIAL AND ORGANIC SEMICONDUCTOR DEVICE USING SAME

NATIONAL INSTITUTE OF ADV...

1. A liquid crystalline organic semiconductor material having substituents on the periphery of a rigid plate-like central
structure, wherein the substituents have a fluorinated phenylene group and columns in which a liquid crystalline compound
is accumulated in a stack and are aligned in the shape of a hexagonal crystal, comprising at least one compound selected from
the group of compounds represented by formula (1):

in formula (1), R is independently hydrogen, a C12 to C24 linear or branched alkyl; in the alkyl, any —CH2—may be replaced by —O—, and —CO—, any —(CH2)2— may be replaced by —CH?CH— or —C?C—, and any hydrogen may be replaced by a halogen;

A is independently 1,4-phenylene in which any hydrogen is replaced by fluorine;
Z is independently a single bond, —(CH2)2—, —COO—, —OCO—, —CONH—, —NHCO—, —CH2O—, —OCH2—, —CF2O—, —OCF2—, —CH?CH—, —C?C—, —CF?CF—, —CH2CO—, or —COCH2;

and n is 1.

US Pat. No. 9,156,699

METHOD FOR PRODUCING GRAPHENE, AND GRAPHENE

NATIONAL INSTITUTE OF ADV...

1. A method for producing graphene, comprising performing a surface wave microwave plasma treatment using hydrogen-containing
gas on a metal substrate having an organic substance thereon under a low pressure of 50 Pa or lower while a temperature of
the metal substrate having the organic substance thereon inside a surface wave microwave plasma treatment device is set to
500° C. or lower, thereby growing graphene on a surface of the organic substance.

US Pat. No. 9,146,136

AXIS RUN-OUT MEASURING METHOD AND ANGLE DETECTING DEVICE WITH SELF-CALIBRATION FUNCTION HAVING AXIS RUN-OUT MEASURING FUNCTION

NATIONAL INSTITUTE OF ADV...

1. An axis run-out measuring method using an angle detecting device with a self-calibration function, in which a plurality
of sensor heads is provided with an equiangular interval at a circumference of a scale disc fixed to a rotating shaft, and
when one of the sensor heads is selected as a reference sensor head, a sum of measurement differences between the reference
sensor head and the other respective sensor heads is calculated, and this sum is divided by the number of sensor heads, to
determine an average value, whereby a self-calibration value is obtained, with the axis run-out measuring method comprising
the steps of:
changing a sensor head selected as the reference sensor head to another sensor head in order one by one, and obtaining each
of the self-calibration values for all the sensor heads where each of all the sensor heads is adopted as the reference head;

deviating each of the self-calibration values by an angle in terms of arrangement on the scale disc with respect to a particular
sensor head, and aligning a phase to a self-calibration value where the particular sensor head is adopted as the reference
head, to conduct phase conversion;

determining an average value for the self-calibration values having been subjected to the phase conversion; and
subtracting the average value of the self-calibration values having been subjected to the phase conversion from each of the
self-calibration values having been subjected to the phase conversion, thereby obtaining only asynchronous angular errors.

US Pat. No. 9,126,899

PHOTOSENSITIVE AZOBENZENE DERIVATIVE

NATIONAL INSTITUTE OF ADV...

1. An azobenzene derivative represented by the general formula (1),

wherein R1 and R6 are independently an alkoxy group with 6 to 18 carbon atoms, and R2 to R5 and R7 to R10 are independently a hydrogen atom or an optionally branched alkyl group with 1 to 4 carbon atoms, with the proviso that the
case where all of R2 to R5 and R7 to R10 are hydrogen atoms is excluded.

US Pat. No. 9,121,821

PROCESS FOR ANALYZING SAMPLE BY CAPILLARY ELECTROPHORESIS METHOD

National Institute of Adv...

1. A process for analyzing glycated hemoglobin in a sample by a capillary electrophoresis method comprising:
providing a sample comprising glycated hemoglobin,
preparing a capillary channel for capillary electrophoresis, and
performing electrophoretic separation of a chemical complex comprising the hemoglobin and a first anionic compound that is
present in a running buffer solution at a pH in a range of 4.5 to 6 in the capillary channel,

wherein the capillary channel comprises an inner wall coated with an A layer and a B layer that coats the A layer, wherein
the A layer is covalently bonded to the inner wall and consists of a cationic compound, and the B layer consists of a second
anionic compound which may be the same or different from the first anionic compound, and

wherein the first anionic compound is an anionic polysaccharide.

US Pat. No. 9,812,702

LITHIUM ION SECONDARY BATTERY HAVING POSITIVE ELECTRODE THAT COMPRISES THERMAL RUN-AWAY SUPPRESSING LAYER ON POSITIVE ELECTRODE ACTIVE MATERIAL LAYER

KABUSHIKI KAISHA TOYOTA J...

1. A lithium ion secondary battery comprising:
a positive electrode including a current collector, a positive electrode active material layer that is formed on the current
collector and that contains a positive electrode active material having a layered rock salt structure and being represented
by a compositional formula: LiaNibCocMndDeOf (0.2?a?1; b+c+d+e=1; 1/3?b<1; 20/100?c<1; 0?e<1; D is at least one element selected from Li, Fe, Cr, Cu, Zn, Ca, Mg, S, Si,
Na, K, and Al; 1.7?f?2.1), and a thermal run-away suppressing layer that is formed on the positive electrode active material
layer and that contains a lithium transition metal silicate and a binding agent in an amount of 1 to 50 parts by mass with
respect to 100 parts by mass of the lithium transition metal silicate; and

a negative electrode including a negative electrode active material, wherein
a ratio of a mass of the lithium-containing complex oxide with respect to a mass of the lithium transition metal silicate
in the positive electrode is not lower than 1.5.

US Pat. No. 9,496,550

HYDROGEN STORAGE ALLOY, HYDROGEN STORAGE ALLOY ELECTRODE, SECONDARY BATTERY, AND METHOD FOR PRODUCING HYDROGEN STORAGE ALLOY

GS YUASA INTERNATIONAL LT...

1. A hydrogen storage alloy containing two or more crystal phases having different crystal structures, wherein the two or
more crystal phases are layered in the c-axis direction of the crystal structures and the hydrogen storage alloy has a composition
defined by a general formula R1dR2eR4fR5g (wherein R1 is one or more kind elements selected from the group consisting of rare earth metals including Y; R2 is one or
more kind elements selected from the group consisting of Mg, Ca, Sr, and Ba; R4 is one or more kind elements selected from
the group consisting of Ni, Co, Cr, Fe, Cu, Zn, Si, Sn, V, Nb, Ta, Ti, Zr, and Hf; R5 is one or two elements selected from
Mn and Al; and d, e, f, and g satisfy 8?d?19; 2?e?9; 73?f?79; 1?g?4; and d +e+f+g=100) and satisfies 3.53?(B/A)?3.80 and 0.0593(B/A)+1.59?rA?0.0063(B/A)+1.81
in the case (B/A) is defined as (f+g)/(d+e) and rA (Å) is defined as the average atomic radius of R1 and R2, wherein the two
or more crystal phases layered in the c-axis direction of the crystal structures comprise a crystal phase having Pr5Col9 type crystal structure and a crystal phase having Ce5Co19 type crystal structure.
US Pat. No. 9,382,297

MUTATED PROTEIN OF PROTEIN A HAVING REDUCED AFFINITY IN ACIDIC REGION AND ANTIBODY-CAPTURING AGENT

NATIONAL INSTITUTE OF ADV...

1. A mutant protein derived from the B domain protein of protein A of the amino acid sequence set forth in SEQ ID NO: 1, the
mutant protein having an amino acid sequence derived from the amino acid sequence set forth in SEQ ID NO: 1 by the substitution
of the amino acid residue of Asp36 by a histidine residue, the amino acid sequence having the same length as SEQ ID NO: 1;
wherein the mutant protein has a binding activity to a constant region of immunoglobulin, and has a reduced binding activity
to the constant region of immunoglobulin in an acidic region of the pH scale, compared with the wild-type B domain of protein
A, and wherein the amino acid derived from the amino acid sequence set forth in SEQ ID NO: 1 comprises the additional substitution
of at least one of Gln9 and Gln10 by a histidine residue.
US Pat. No. 9,629,900

ORAL COMPOSITION CONTAINING INTERFERON-?

Hokusan Co. Ltd., Hokkai...

1. A method for treating periodontal disease in a nonhuman mammal, which comprises the step of applying interferon ? at 0.05
to 2,500 Laboratory Unit (LU)/day/kg body weight in the form of a composition comprising interferon ? and a paste carrier
on an oral tissue of the nonhuman mammal.

US Pat. No. 9,281,223

COUPLING SYSTEM

National Institute of Adv...

1. A coupling system comprising: a transfer box having a transfer box body and a transfer box door; and an apparatus having
an apparatus body and an apparatus door, wherein the transfer box door is made to support a wafer thereon and carry the wafer
within an interior of the apparatus body;
said coupling system having structures wherein:
the transfer box has a first sealing structure hermetically sealable by means of tight coupling of the transfer box body and
transfer box door;

the apparatus has a second sealing structure hermetically sealable by means of tight coupling of the apparatus body and apparatus
door;

the transfer box and apparatus have a third sealing structure hermetically sealable by means of tight coupling of both, as
formed between the transfer box body and apparatus body; and

only when the transfer box and apparatus are tightly coupled, one undivided coupling chamber is formed hermetically by the
third sealing structure, where a means for cleaning the coupling chamber is provided, and the transfer box door is separated
from the transfer box body and taken into the interior of the apparatus body together with the apparatus door while supporting
the wafer on the transfer box door.

US Pat. No. 9,151,894

LIGHT SOURCE CIRCUIT AND LIGHT SOURCE DEVICE EQUIPPED WITH SAME

NATIONAL INSTITUTE OF ADV...

1. A light source circuit in which at least one optical branch section for branching one input side optical waveguide into
at least a first output side optical waveguide and a second output side optical waveguide is formed on a substrate, and light
incident from a semiconductor laser light source is transmitted to a plurality of optical devices, comprising:
a phase control structure for controlling a light path length in which a light path length L1 of an optical waveguide between the optical branch section and a next-stage optical branch section or an optical device which
is connected to the first output side optical waveguide extending from the optical branch section, and a light path length
L2 of an optical waveguide between the optical branch section and a next-stage optical branch section or an optical device which
is connected to the second output side optical waveguide are controlled such that an absolute value of a difference between
the light path length L1 and the light path length L2 is (¼+i/2) times (i is 0 or a positive integer) a wavelength of the light propagated through the light source circuit.

US Pat. No. 9,126,835

CARBON NANOTUBE FILM STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

NATIONAL INSTITUTE OF ADV...

1. A carbon nanotube film structure having a carbon nanotube layer comprised of a densified carbon nanotube aggregate in which
a plurality of carbon nanotubes align in one direction within a film plane on a substrate so that the adjacent carbon nanotubes
are adhered with each other,
wherein the carbon nanotube layer comprises a weight density of 0.1 g/cm3 to 1.5 g/cm3, a thickness of 10 nm or more, and a Herman's Orientation Factor of 0.6 or more, and

wherein a direction of shrinkage of the densified carbon nanotube aggregate is defined in one dimensional manner perpendicular
to the substrate.

US Pat. No. 9,809,457

CARBON NANOTUBE AGGREGATE, CARBON NANOTUBE AGGREGATE HAVING A THREE-DIMENSIONAL SHAPE, CARBON NANOTUBE MOLDED PRODUCT USING THE CARBON NANOTUBE AGGREGATE, COMPOSITION, AND CARBON NANOTUBE DISPERSION LIQUID

NATIONAL INSTITUTE OF ADV...

1. A carbon nanotube aggregate having a three-dimensional shape comprising:
a first surface, a second surface and a side surface;
wherein
a carbon nanotube of the first surface has a Herman orientation coefficient greater than ?0.1 and smaller than 0.2,
a carbon nanotube of the second surface has a Herman orientation coefficient greater than ?0.1 and smaller than 0.2,
a carbon nanotube of the side surface has a degree of orientation in which a Herman orientation coefficient is 0.2 or more
and 0.99 or less,

the first surface and the second surface are mutually arranged in parallel and the side surface is perpendicular with respect
to the first surface and the second surface,

at least one of the first surface or the second surface comprises a network of carbon nanotubes, and
a pore volume is 5 mL/g or more at a pore size where the differential pore volume of the carbon nanotube aggregate having
a three-dimensional shape is a maximum.

US Pat. No. 9,586,927

METHOD FOR CONTINUOUSLY PRODUCING CYCLIC CARBONATE

MARUZEN PETROCHEMICAL CO....

1. A method for continuously producing a cyclic carbonate, the method comprising:
filling a tributylphosphonium bromide surface-modified silica gel catalyst in a fixed bed tube reactor,
contacting a pre-treatment liquid comprising a sacrificial cyclic carbonate with the catalyst to form a glycol,
removing the glycol from the fixed-bed tube reactor, and
continuously feeding carbon dioxide, 2-bromoethanol and ethylene oxide to the fixed-bed tube reactor to thereby bring the
carbon dioxide and the ethylene oxide into contact with the tributylphosphonium bromide surface-modified silica gel catalyst
to form a reaction liquid comprising the cyclic carbonate, while continuously withdrawing the reaction liquid from the fixed-bed
tube reactor,

wherein the sacrificial cyclic carbonate and the cyclic carbonate in the reaction liquid are identical.

US Pat. No. 9,230,065

INTENTION CONVEYANCE SUPPORT DEVICE AND METHOD

National Institute of Adv...

1. A communication assist method, comprising:
obtaining brain wave data from an electroencephalograph;
analyzing the brain wave data;
determining a discriminant function based on the analyzed brain wave data;
determining a success rate based on the discriminant function;
determining that a specific intention decision has been made in the brain when a product of an accumulated discrimination
score according to the discriminant function and the success rate exceeds a threshold value; and

outputting a determination result of the specific intention decision to an electronic device;
wherein the analyzing and determining steps are performed by a communication assist apparatus, the communication assist apparatus
comprising:

a stimulus-presenting apparatus; and
a processing apparatus that processes the brain wave data from the electroencephalograph that measures a brain wave after
stimulus presentation by the stimulus-presenting apparatus.

US Pat. No. 9,074,278

CARBON FILM LAMINATE

NATIONAL INSTITUTE OF ADV...

1. A carbon film laminate, comprising:
a single crystal substrate,
a copper single crystal thin film formed by epitaxial growth on the substrate, and
a single layer graphene formed on the copper single crystal thin film,
wherein the copper single crystal thin film is copper (111) or copper (100),
wherein the single crystal substrate is a sapphire single crystal substrate comprising:
a surface composed of terrace surfaces flat at the atomic level, and
atomic-layer steps, having at most 0.3° of plane direction in tolerance,
and having at most 0.020 mm of parallelism at both ends of the substrate of 10 mm in width.
US Pat. No. 9,321,649

CARBON MICROPARTICLE HAVING LIGNIN AS RAW MATERIAL AND PREPARATION METHOD THEREFOR

NATIONAL INSTITUTE OF ADV...

1. A hollow carbon microparticle preparation method, comprising:
providing an aqueous solution of an organic raw material having lignin as a main constituent;
turning the aqueous solution into a micro-droplet;
drying the micro-droplet to prepare a microparticle; and
thermally decomposing the microparticle in a range of 300° C. to 1200° C. to prepare a hollow carbon microparticle.

US Pat. No. 9,228,113

WATER VAPOR BARRIER FILM AND METHOD FOR PRODUCING SAME

NATIONAL INSTITUTE OF ADV...

1. A method for producing a water vapor barrier film comprising a laminated film comprising a clay membrane coated and dried
on a resin film substrate, the method comprising:
the resin film substrate comprises polyester resin, and the clay membrane is formed of a clay and an additive consisting of
a thermoplastic or thermosetting resin;

the clay comprises lithium ion which is at least 90% by mole of intercalating exchangeable ions;
a weight ratio of the clay relative to the total solid is 60 to 90% by weight; and
applying a clay paste prepared from the clay, the additive consisting of the thermoplastic or thermosetting resin, and a dispersion
medium as a solvent to the resin film having a flat surface, to form a coated substrate;

drying the coated substrate;
removing the dispersion medium; and
performing a water resistance imparting treatment under a temperature condition of 100 to 200° C. that is determined depending
on the heatproof temperature of the resin film substrate to form the laminated film, and

wherein the laminate film has an oxygen gas transmission coefficient at a room temperature of less than 4.0×10?15 cm2s?1cmHg?1, a volume resistivity in the perpendicular direction of 10 M? or more, and a water vapor transmission rate of less than 3
g/m2·day (test method: Dish method, test period: 140 hr).

US Pat. No. 9,082,525

LITHIUM SILICATE-BASED COMPOUND AND PRODUCTION PROCESS FOR THE SAME, POSITIVE-ELECTRODE ACTIVE MATERIAL AND POSITIVE ELECTRODE FOR USE IN LITHIUM-ION SECONDARY BATTERY AS WELL AS SECONDARY BATTERY

KABUSHIKI KAISHA TOYOTA J...

1. A lithium silicate-based compound being characterized in that:
the lithium silicate-based compound is expressed by a general formula, Li(2?a+b)AaMn(1?x?y)CoxMySiO(4+?) Cl?,

wherein “A” is at least one element selected from the group consisting of Na, K, Rb and Cs;
“M” is at least one member selected from the group consisting of Mg, Ca, Al, Ni, Fe, Nb, Ti, Cr, Cu, Zn, Zr, V, Mo and W;
0?“a”<0.2; 0?“b”<1; 0<“x”<1; 0?“y”?0.5; 1-“x”-“y”>0; ?0.25?“?”?1.25; and 0<“?”<0.05.

US Pat. No. 9,728,606

SILICON CARBIDE SEMICONDUCTOR ELEMENT AND FABRICATION METHOD THEREOF

FUJI ELECTRIC CO., LTD., ...

1. A fabrication method of a silicon carbide semiconductor element that includes a drift layer playing a role of retaining
a high withstand voltage on a front side of a semiconductor substrate of silicon carbide and including an ohmic electrode
on a backside, the fabrication method comprising:
forming one or more slit-shaped grooves in an element active region on a surface of the semiconductor substrate on a side
opposite of the drift layer before forming the ohmic electrode on the backside of the semiconductor substrate;

the one or more slit-shaped grooves are formed by a dicing blade; and
the dicing blade is applied directly to a furthest most edge of a first end of the semiconductor substrate and across a certain
direction of the semiconductor substrate which is perpendicular to a surface of the substrate contacting the drift layer,
and the dicing blade is separated from the semiconductor substrate before reaching a second end of the semiconductor substrate
on a side opposite to an incident direction of the dicing blade so as to maintain an un-diced substrate peripheral portion;
and

a distance between the one or more slit-shaped grooves is made smaller than a thickness of the dicing blade such that an entire
surface directly underlying the backside of the semiconductor element is made thinner leaving the un-diced substrate peripheral
portion.

US Pat. No. 9,496,433

PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE

ROHM CO., LTD., Kyoto (J...

1. A photoelectric conversion device comprising:
a substrate;
a lower electrode layer provided on the substrate;
a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer; and
a transparent electrode layer provided on the compound semiconductor layer;
wherein the compound semiconductor layer has a Ga content having a maximum variation of not less than 5% as measured in a
layer thickness direction, and has an In content having a maximum variation of not less than 6% as measured in the layer thickness
direction, the Ga content and the In content varying continuously in the layer thickness direction.

US Pat. No. 9,495,749

METHOD AND SYSTEM FOR DETECTING POSE OF MARKER

NATIONAL INSTITUTE OF ADV...

1. A pose detecting system comprising:
a marker that uses a microlens array;
a camera that picks up the marker; and
a computer that receives a marker image including an image of the marker picked up by the camera, wherein the marker includes:
a lens area constituted of the microlens array and a mark array having a plurality of marks arrayed with a pitch similar to
that between a plurality of lenses constituting the microlens array in such a manner as to produce a moiré pattern (an interference
pattern); and

four reference points, and
wherein the computer is configured to perform actions, the actions including:
determining a pose of the marker based on the four reference points;
analyzing the moiré pattern so as to calculate an angle formed by the marker and a straight line connecting a center of an
integrated mark that emerges at the lens area as the moiré pattern and is similar in shape to each of the plurality of marks
to a viewpoint at the marker, the analyzing includes subjecting, to conversion, a position of the integrated mark on a two-dimensional
plane, on which the plurality of marks are arrayed, based on a predetermined linear conversion formula so as to calculate
the angle; and

correcting the determined pose of the marker by using the calculated angle, including calculating a rotational matrix such
that a point Pvr calculated based on the pose of the marker is regarded as a point Pvc that is on a straight line connecting
the center of the integrated mark to the viewpoint of the marker and a distance from a center of the lens area is equal to
a distance between the center of the lens area and the point Pvr, and then, multiplies a matrix indicating the pose of the
marker by a matrix inverse to the rotational matrix, so as to correct the pose of the marker.

US Pat. No. 9,404,746

DEVICE FOR MEASURING ROTATION ANGLE ACCELERATION

NATIONAL INSTITUTE OF ADV...

1. A device for measuring an angular acceleration acting on the device, the device comprising:
an oscillator rotating around a rotating shaft as a center;
a plurality of nodes for supporting the oscillator, the plurality of nodes each being provided at a point on a circle whose
radius is r and whose center is the rotating shaft;

a plurality of parallelogram hinges each having a pair of parallel arms whose length is r and a coupling arm connecting the
pair of parallel arms, the parallel arms making a movement of the plurality of nodes supporting the oscillator become a circular
movement around the rotating shaft as the center;

wherein a movement of each of the coupling arms is restrained by a plurality of fixed nodes attached to the respective free
ends of the parallel arms of each of the parallelogram hinges;

a supporting section for supporting the fixed nodes of each of the plurality of parallelogram hinges;
a rotation angle detecting sensor for detecting a rotation angle of the rotating oscillator; and
a calculation section for calculating the angular acceleration from the rotation angle.

US Pat. No. 9,125,609

PORTABLE TERMINAL HAVING FUNCTION OF MEASURING MENTAL FATIGUE, METHOD FOR MEASURING SAME AND SERVER COMPUTER

NATIONAL INSTITUTE OF ADV...

1. A portable terminal device capable of measuring mental fatigue comprising:
a processor configured to calculate a first frequency data and a second frequency data;
an operation unit;
an imaging unit configured to measure ambient light, the imaging unit comprising a CCD or CMOS sensor and a lens;
a display screen configured to display a blinking image while a flicker frequency of the blinking image is being monotonically
changed with time from a start frequency to an ending frequency; and

a memory configured to record the flicker frequency, as a measurement frequency, at the time when a user operates the operation
unit to indicate that the user perceives flicker during the display of the blinking image,

wherein:
the first frequency data is associated with first environmental data, which represents the ambient light measured by the imaging
unit, the first frequency data being the measurement frequency measured when the user is specified as being healthy via the
operation unit, and an associated data of the first frequency data and the first environmental data is stored in the memory;
and

a proportion of decrease of the second frequency data from the first frequency data, the first frequency data being associated
with the first environmental data, the first environmental data having the same order of magnitude as that of second environmental
data, the proportion of decrease of the second frequency is calculated to evaluate a degree of fatigue of the user, the second
frequency data being the measurement frequency measured when the user is not specified as being healthy via the operation
unit, the second environmental data being the ambient light measured by the imaging unit, and the degree of fatigue is displayed
on the display screen,

wherein:
each of the first and second environmental data is a value calculated by
first environmental data=K×Sn/SS, and

second environmental data=K×Sn/SS,

using image luminance data SS obtained by capturing a reference image at a position having a reference illuminance of K; and image luminance data Sn obtained by the imaging unit capturing the reference image at a position having an arbitrary illuminance, and

wherein the processor uses the reference illuminance of K to correct the image luminance data Sn.

US Pat. No. 9,663,776

XYLANASE

NATIONAL INSTITUTE OF ADV...

1. A polypeptide having xylanase activity and comprising an amino acid sequence having at least 99% sequence identity with
an amino acid sequence of SEQ ID NO:1, wherein the polypeptide does not have the amino acid sequence of SEQ ID NO: 1.
US Pat. No. 9,605,029

ANTIBODY-BINDING PEPTIDE

NATIONAL INSTITUTE OF ADV...


where x represents any amino acid residue; and amino acid residues within the square brackets indicate that any one of the
amino acid residues is selected.

US Pat. No. 9,507,234

REFLECTION-TYPE LIGHT CONTROL ELEMENT, REFLECTION-TYPE LIGHT CONTROL MEMBER, AND MULTILAYER GLASS

National Institute of Adv...

1. A reflection-type light control element, wherein the reflection-type light control element comprises a light control layer
configured to exhibit a reversible change between a transparent state and a reflection state in a reversible reaction with
a hydrogen and a catalyst layer configured to accelerate the reversible reaction of the light control layer, and wherein the
reflection-type light control element is such that the light control layer includes an alloy that contains at least one kind
of element selected from the group consisting of group 2 elements and at least two kinds of elements selected from the group
consisting of group 3 elements and rare earth elements or a hydride of the alloy,
wherein the reflection-type light control element is such that the alloy is a magnesium-yttrium-scandium alloy represented
by Mg1-x-yYxScy (0.3

US Pat. No. 9,460,769

ELECTRIC FIELD FERROMAGNETIC RESONANCE EXCITATION METHOD AND MAGNETIC FUNCTION ELEMENT EMPLOYING SAME

National Institute of Adv...

1. An electric field-driven type ferromagnetic resonance excitation method, comprising:
applying a magnetic field having a specific magnetic field application angle and magnetic field strength to a laminate structure
in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons
does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer
and an electrode layer are arranged in order on the ultrathin ferromagnetic layer side, wherein a resistance-area value of
the insulation barrier layer is greater than or equal to 10 ??m2, and a tunnel current density flowing via the insulation barrier layer during voltage application is less than or equal to
1×109 A/m2, and

applying an electric field having a high-frequency component of a magnetic resonance frequency between the magnetic anisotropy
control layer and the electrode layer, thereby exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

US Pat. No. 9,365,866

VECTORS FOR GENERATING PLURIPOTENT STEM CELLS AND METHODS OF PRODUCING PLURIPOTENT STEM CELLS USING THE SAME

NATIONAL INSTITUTE OF ADV...

1. A method for producing an induced pluripotent stem cell comprising the steps of: infecting a differentiated cell with a
Sendai viral vector comprising a Sendai virus NP gene, P/C gene, and L gene, wherein the L gene encodes a Sendai virus L protein
in which the amino-acid residue at position 1618 is valine, and wherein said Sendai viral vector further comprises one or
more genes, selected from the group consisting of: the M gene from a Sendai virus strain Cl.151; the F gene from a Sendai
virus strain Cl.151; and the HN gene from a Sendai virus strain Cl.151, wherein the one or more genes are functionally-deleted
by insertion or substitution with reprogramming genes, wherein the reprogramming genes comprise a combination of Oct3/4, Sox2
and Klf4, or a combination of Oct3/4, Sox2, Klf4 and c-Myc; and culturing the infected cell to induce reprogramming of the
infected cell to the pluripotent stem cell, wherein the viral vector further comprises a target sequence for a microRNA, such
that when a microRNA interacts with said target sequence, the viral vector is removed from the stem cell.

US Pat. No. 9,254,397

PLASMA EVALUATION APPARATUS

NATIONAL INSTITUTE OF ADV...

1. A plasma evaluation system, comprising:
a treatment target material; and
a weak current measurement unit including a resistor unit and a differential amplifier,
wherein the treatment target material is connected to the weak current measurement unit via a treatment target side measurement
terminal,

wherein the resistor unit of the weak current measurement unit is connected to a ground side of a plasma generation power
source,

wherein the plasma evaluation system is configured to evaluate plasma by receiving plasma generated by a plasma treatment
equipment with the treatment target material, measuring a current of a voltage across resistors of the resistor unit through
the differential amplifier, and measuring an output voltage of the plasma generation power source, and

wherein the plasma evaluation system is configured to measure an output signal of the differential amplifier and a signal
of a voltage by transmitting the signals through an analog optical converter and an optical fiber, converting the signals
to electric signals at a light receiving unit, and inputting the electric signals to an analog-digital converter, or to measure
an output signal of the differential amplifier and a signal of a voltage by inputting the signals to an analog-digital converter,
further converting the signals to light to thereby transmit the signals through an optical fiber as electrically insulated
data, and inputting the signals to another analog-digital converter.

US Pat. No. 9,976,012

FLAME-RETARDANCE-IMPARTING MATERIAL AND FLAME-RETARDANT RESIN FORMED ARTICLE

KITAGAWA INDUSTRIES CO., ...

1. A method for producing a flame-retardance-imparting material, the method comprising: a shredding step of shredding a plant material containing stems and/or leaves of tomato plants and/or eggplant plants in an aqueous solvent; andan aqueous solvent removal step of removing the aqueous solvent from the plant material after shredding.

US Pat. No. 9,929,311

SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME

MARUBUN CORPORATION, Tok...

1. A semiconductor light emitting element with a design wavelength of ?, comprising:a transmitted-type photonic crystal periodic structure including a plurality of pillar structures, each having a radius of R at a backside of a substrate, wherein the photonic crystal periodic structure is formed by two-types of structures, air having a refractive index n2, and the substrate having refractive index n1,
wherein the photonic crystal periodic structure has two photonic band gaps, wherein the photonic band gaps are open for TM polarization component, and have an average refractive index nav of the two-types of structures, the average refractive index nav satisfies Bragg conditions m?/nav=2a, wherein nav is calculated by the equation of nav=(n22+(n12?n22)(2?/?3)(R/a)2)1/2, a is a period of the pillar structures, an order m of the Bragg conditions is 4, 0.31?R/a?0.36, and a depth of each of the pillar structures h?0.5a.

US Pat. No. 9,650,582

BIODIESEL FUEL HYDROGENATION METHOD

NATIONAL INSTITUTE OF ADV...

1. A method for hydrogenating a biodiesel fuel, the method comprising hydrogenating a biodiesel fuel in the presence of a
catalyst containing at least one type of noble metal selected from the group consisting of metals of Groups 8 to 10 in the
periodic table, wherein oxygen is allowed to be present in the reaction system, wherein a concentration of the oxygen in terms
of oxygen molecules in the biodiesel fuel is from 150 ppm to 3,500 ppm.

US Pat. No. 9,587,326

SILICON CARBIDE EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER, DEVICE FOR MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER, AND SILICON CARBIDE SEMICONDUCTOR ELEMENT

National Institute of Adv...

1. A method for manufacturing a silicon carbide epitaxial wafer, comprising:
introducing an etching gas comprising hydrogen gas onto a substrate surface of a silicon carbide substrate which has an ?-type
crystal structure and is tilted at greater than 0° and less than 5° relative to a (0001) Si face to perform hydrogen etching;
and

introducing a raw material gas to form an epitaxially grown layer on the substrate surface after the hydrogen etching, wherein
the hydrogen etching is carried out under etching conditions for setting etching depth with respect to the substrate surface
at 1 nm or less.

US Pat. No. 9,524,895

SUBSTRATE TRANSFER ANTECHAMBER MECHANISM

NATIONAL INSTITUTE OF ADV...

1. A substrate transfer antechamber mechanism for a manufacturing apparatus including a processing chamber that performs processing
of a processing substrate, and an apparatus antechamber that transfers the processing substrate into and out of the processing
chamber, the mechanism comprising:
a container placement table provided on an upper surface of a casing of the apparatus antechamber onto which a substrate transfer
container is detachably settable from an outside of the casing, the substrate transfer container having a delivery bottom
onto which the processing substrate is disposed on;

an inlet provided to the casing of the apparatus antechamber, through which the delivery bottom of the substrate transfer
container set on the container placement table is transferred into the apparatus antechamber;

a substrate elevating mechanism provided in the apparatus antechamber, which moves down while being held from below the delivery
bottom of the substrate transfer container, on which the processing substrate remains placed, to transfer the processing substrate
into the apparatus antechamber through the inlet; and

a horizontal transfer mechanism provided in the apparatus antechamber to transfer the processing substrate into the processing
chamber using a transfer arm that receives the processing substrate from the delivery bottom and extends in a horizontal direction,
wherein a base of the transfer arm is disposed inside the casing of the apparatus antechamber.

US Pat. No. 9,495,804

HAPTIC INFORMATION PRESENTATION SYSTEM AND METHOD

National Institute of Adv...

1. A haptic electronic device comprising a haptic presentation device that presents to an operator haptic information as if
the operator operates a real object, by applying at least one of a haptic sensory characteristic of the operator and illusion
to a virtual object;
wherein the haptic presentation device comprises a haptic information presentation controlling device that controls a physical
quantity to present the haptic information by utilizing that the haptic sensory characteristic representing a relationship
between a physical quantity to be applied to a human body and a sensory quantity to be perceived by the human body is nonlinear;
and

a driving device that is controlled based on the haptic information,
wherein the haptic sensory characteristic comprises (i) one or more of a physical quantity being given to the operator and
a physical quantity being brought by motion of the operator, and (ii) a sensory quantity to be presented to the operator,
and

wherein the sensory quantity comprises a sensory quantity that does not exist physically.

US Pat. No. 9,376,688

METHOD OF PRODUCING CYCLAMEN WITH MULTI-PETALED FLOWERS

HOKKO CHEMICAL INDUSTRY C...

1. A method of producing a cyclamen plant having an increased number of petals, comprising (i) inhibiting the functions of CpAG1 and CpAG2 in the plant, wherein
the inhibiting comprises introducing a construct encoding a chimeric protein comprising CpAG1 fused to an SRDX domain and
a construct encoding a chimeric protein comprising CpAG2 fused to an SRDX domain into the cyclamen plant; and (ii) selecting a resulting plant that is multi-petaled and has an increased number of petals as compared to a cyclamen plant having only CpAG1 activity inhibited, wherein the CpAG1 comprises the amino acid sequence defined in any one of the
following (a) to (b):
(a) the amino acid sequence of SEQ ID NO: 2, and
(b) an amino acid sequence sharing 95% or more identity with the amino acid sequence of SEQ ID NO: 2, and
wherein the CpAG2 comprises the amino acid sequence defined in any one of the following (c) to (d):
(c) the amino acid sequence of SEQ ID NO: 4, and
(d) an amino acid sequence sharing 95% or more identity with the amino acid sequence of SEQ ID NO: 4.

US Pat. No. 9,354,085

ANGLE DETECTING DEVICE WITH COMPLEX SELF-CALIBRATION FUNCTION

NATIONAL INSTITUTE OF ADV...

1. An angle detecting device with a self-calibration function, having sensor heads for reading a scale at a circumference
of a scale disc fixed to a rotating shaft, in which the angle detecting device has: first sensor heads arranged with an equiangular
interval at the circumference of the scale disc; and a second sensor head arranged at a position of one of the first sensor
heads in place of the one of the first sensor heads, and in which the angle detecting device performs self-calibration, by
obtaining measurement differences between the second sensor head and the first sensor heads, to determine average values thereof,
with the first sensor heads and the second sensor head comprising a first group including L sensor heads arranged with an
equiangular interval and a second group including M sensor heads arranged with an equiangular interval,

wherein the angle detecting device with the self-calibration function comprises:
phase shifter for shifting phases of the calibration values, obtained from the second group, by a scale of j*P/L(j=1 to L?1),
where the total number of scale marks arranged on the scale disc is denoted as P; and

calculator for obtaining average values of the calibration values obtained from the second group and the (L?1) shifted calibration
values obtained by the phase shifter, adding the average values to the calibration values obtained from the first group, and
outputting the added values as calibration values,

in which j is a natural number, and L and M are natural numbers where a least common denominator of L and M is larger than
a sum of L and M.

US Pat. No. 9,123,795

METHOD OF MANUFACTURING SEMICONDUCTOR WAFERS

FUJIKOSHI MACHINERY CORP....

1. A method of manufacturing semiconductor wafers, in which a plurality of small-diameter wafers is cut out from a large-diameter
semiconductor wafer, the method comprising the following steps:
a marking step of forming straight groove-like orientation flat lines by a laser beam so as to cross the respective small-diameter
wafers in each row in the large-diameter semiconductor wafer, wherein cutout positions of the small-diameter wafers are aligned
in rows in a specific direction, collectively for each of the rows; and

a cutting step of cutting out the small-diameter wafers separately from the large-diameter semiconductor wafer by a laser
beam, after the marking step, in such a way that the orientation flat lines are located at required positions in the small-diameter
wafers to be obtained;

an outside diameter finishing step of finishing the cut out small-diameter wafer so as to have a required outside diameter;
a beveling step of beveling an outer periphery of the small-diameter wafer into a predefined shape;
an etching step of etching the beveled small-diameter wafers;
a mirror beveling step of mirror processing a beveled portion of the beveled small-diameter wafer, using a finishing grinding
stone;

a polishing step of mirror processing the mirror-beveled small-diameter wafers; and
a precision cleaning step of cleaning the wafers contaminated through polishing.

US Pat. No. 9,869,815

OPTICAL DEVICE HAVING A STEPWISE OR TAPERED LIGHT INPUT/OUTPUT PART AND MANUFACTURING METHOD THEREFOR

Oki Electric Industry Co....

1. An optical device comprising an optical waveguide provided on a principal surface of a substrate, said optical waveguide
comprising:
a core formed by patterning a single-crystalline film which has constituent atoms substantially forming a diamond lattice
structure and has a surface being neither a (111) plane nor an equivalent plane to the (111) plane;

a first cladding formed by covering the core with a substance having a refractive index smaller than 71.4% of the refractive
index of the core; and

a light input/output part through which a light beam is input or output,
the light input/output part having two or more planes selected from a (111) plane and an equivalent plane to the (111) plane,
which expose as etch-stop planes when a precursor tapered in width toward an end portion of the light input/output part is
wet etched using an alkaline solution, and the core having two planes substantially non-parallel to each other among the (111)
plane and the equivalent plane.

US Pat. No. 9,856,229

METHOD FOR PRODUCING CYCLIC CARBONATE

National Institute of Adv...

14. A method for producing a cyclic carbonate comprising:
(i) reacting epoxide and carbon dioxide in the presence of a quaternary onium salt selected from the group consisting of a
quaternary ammonium salt having a halogenated anion as a counter ion and a quaternary phosphonium salt having a halogenated
anion as a counter ion, or

(ii) reacting epoxide and carbon dioxide in the presence of a solid catalyst obtained by immobilizing the quaternary onium
salt onto a carrier; and

adding an organohalogen compound to (i) or (ii), wherein the organomonohalogen compound is a monohalogenated alcohol selected
from the group consisting of chloromethanol, chloroethanol, chloropropanol, chlorobutanol, chloropentanol, bromomethanol,
bromopropanol, bromobutanol, bromoethanol, bromopentanol, iodomethanol, iodoethanol, and iodopropanol.

US Pat. No. 9,802,312

OPERATION COMMAND GENERATION DEVICE, OPERATION COMMAND GENERATION METHOD, NON-TRANSITORY COMPUTER READABLE STORAGE MEDIUM, AND PROCESS SYSTEM

NATIONAL INSTITUTE OF ADV...

1. An operation command generation device configured to generate an operation command, which is a collection of jobs to be
carried out by a process system comprising at least a robot based on a protocol chart comprising at least a process symbol
representing a process to be carried out on a container containing a process subject, the operation command generation device
comprising:
a process job generation unit configured to generate, based on the process symbol, a job for causing the process system to
carry out the process on the container at a work area;

a transfer job generation unit configured to generate, when the process represented by the process symbol is not a process
to be carried out on at least the same container, a job for causing the process system to transfer the container from the
work area to a retreat area after the process represented by the process symbol has been carried out, and

the transfer job generation unit further configured not to generate the job when the process represented by the process symbol
is a process to be carried out on the same container at the work area such that the same container stays at the work area
during different consecutive processes.

US Pat. No. 9,614,030

VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS AND FABRICATION METHOD OF VERTICAL HIGH VOLTAGE SEMICONDUCTOR APPARATUS

FUJI ELECTRIC CO., LTD., ...

1. A vertical high voltage semiconductor apparatus comprising:
a semiconductor substrate of a first conductivity type;
a first semiconductor layer of the first conductivity type, formed on the semiconductor substrate and having an impurity concentration
lower than that of the semiconductor substrate;

a second semiconductor layer of a second conductivity type, selectively formed on a surface of the first semiconductor layer
and having an impurity concentration higher than that of the first semiconductor layer;

a base layer of the second conductivity type disposed on the first semiconductor layer and the second semiconductor layer;
a first conductivity type source region selectively formed in a surface layer of the base layer;
a second conductivity type contact region selectively formed in the surface layer of the base layer;
an N-counter layer of the first conductivity type formed to penetrate the base layer from a surface and reach the first semiconductor
layer;

a gate electrode layer disposed through a gate insulating film in at least a portion of an exposed portion of a surface of
the base layer between the source region and the N-counter layer;

a source electrode in contact commonly with surfaces of the source region and the base layer; and
a drain electrode disposed on a back face of the semiconductor substrate, wherein
portions of the second semiconductor layer are directly connected with each other in regions beneath the N-counter layer.

US Pat. No. 9,589,765

SAMPLE SUPPORTING MEMBER FOR OBSERVING SCANNING ELECTRON MICROSCOPIC IMAGE AND METHOD FOR OBSERVING SCANNING ELECTRON MICROSCOPIC IMAGE

NATIONAL INSTITUTE OF ADV...

1. A sample supporting member for observing a scanning electron microscopic image arranged in an optical barrel under reduced-pressure
ambient, comprising
a laminate comprising an insulative thin film and a conductive thin film, wherein a surface on a side of the insulative thin
film is an electron beam incident surface, and a surface on a side of the conductive thin film is a sample adhesion surface
exposed to the reduced-pressure ambient,

wherein
the sample adhesion surface includes an emission surface for electrons tunneling from the insulative thin film and through
a sample on the sample adhesion surface and thereby contributing to forming the scanning electron microscopic image.

US Pat. No. 9,490,338

SILICON CARBIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SAME

National Institute of Adv...

1. A method of manufacturing a silicon carbide semiconductor apparatus, comprising:
forming a lower deposition film of low impurity concentration silicon carbide of a first conductivity type on a surface of
a silicon carbide substrate of the first conductivity type;

forming an impurity region of a second conductivity type in the lower deposition film;
forming an upper deposition film constituting a low impurity concentration gate region of the second conductivity type on
the lower deposition film in which the impurity region of the second conductivity type is formed and to be in direct contact
with the impurity region of the second conductivity type;

forming a high impurity concentration source region of the first conductivity type in the upper deposition film;
forming in the upper deposition film a low impurity concentration base region of the first conductivity type not contacting
the source region and in contact with the lower deposition film and in direct contact with a first region where the impurity
region is not formed in the lower deposition film, by selectively implanting impurity ions of the first conductivity type
to form a second region of the first conductivity type that is wider than the first region and surrounded by the low impurity
concentration gate region, wherein the low impurity concentration base region and the first region where the impurity region
is not formed in the lower deposition film each have a constant width;

forming a gate insulation film on a surface of the upper deposition film;
forming a gate electrode via the gate insulation film;
forming a drain electrode having a low-resistance contact connection with a backside of the silicon carbide substrate of the
first conductivity type; and

forming a source electrode of a silicon carbide vertical metal oxide semiconductor field effect transistor (MOSFET) having
a low-resistance contact connection with part of the high impurity concentration source region of the first conductivity type
and the low impurity concentration gate region of the second conductivity type.

US Pat. No. 9,416,260

PLANT DERIVED PLASTIC BLEND AND A METHOD OF MANUFACTURING THE SAME

NATIONAL INSTITUTE OF ADV...

1. A plant derived plastic blend comprising:
10 wt % or more and 90 wt % or less of a plant derived high density polyethylene and 10 wt % or more and 90 wt % or less of
a plant derived polylactic acid to achieve a total of 100 wt %; and

further containing 1 wt % or more and 20 wt % or less of a compatibilizing agent,
wherein a modulus of elongation of the plant derived plastic blend is 950 MPa or more and a breaking elongation of 4% or more,
and

wherein a proportion being 1 ?m or less of a domain size of the plant derived polylactic acid is 60% or more in the case where
the plant derived high density polyethylene is a matrix, and a proportion being 1 ?m or less of a domain size of the plant
derived high density polyethylene is 40% or more in the case where the plant derived polylactic acid is a matrix.

US Pat. No. 9,176,182

I-V CHARACTERISTIC MEASURING APPARATUS AND I-V CHARACTERISTIC MEASURING METHOD FOR SOLAR CELL, AND RECORDING MEDIUM RECORDED WITH PROGRAM FOR I-V CHARACTERISTIC MEASURING APPARATUS

National Institute of Adv...

1. An I-V characteristic measuring apparatus for a solar cell comprising:
a light state forward I-V characteristic storage part that stores a light state forward I-V characteristic that is an I-V
characteristic of the solar cell measured in a light state where the solar cell is irradiated with pseudo-sunlight and in
a forward sweep mode in which applied voltage to the solar cell is swept from a short-circuit current side to an open-circuit
voltage side within a predetermined time;

a light state reverse I-V characteristic storage part that stores a light state reverse I-V characteristic that is an I-V
characteristic of the solar cell measured in the light state and in a reverse sweep mode in which the applied voltage to the
solar cell is swept from the open-circuit voltage side to the short-circuit current side within the predetermined time;

a dark state forward I-V characteristic storage part that stores a dark state forward I-V characteristic that is an I-V characteristic
of the solar cell measured in a dark state where the solar cell is not irradiated with the pseudo-sunlight and in the forward
sweep mode;

a dark state reverse I-V characteristic storage part that stores a dark state reverse I-V characteristic that is an I-V characteristic
of the solar cell measured in the dark state and in the reverse sweep mode;

a dark state stationary I-V characteristic storage part that stores a dark state stationary I-V characteristic that is an
I-V characteristic of the solar cell measured in the dark state and in a stationary sweep mode in which the applied voltage
to the solar cell is swept between the short-circuit current side and the open-circuit voltage side over a time longer than
the predetermined time;

an internal division ratio calculation part that, at each voltage value, calculates an internal division ratio at which a
current value of the dark state stationary I-V characteristic internally divides a gap between a current value of the dark
state forward I-V characteristic and a current value of the dark state reverse I-V characteristic; and

a light state stationary I-V characteristic estimation and calculation part that, on a basis of the internal division ratio,
the light state forward I-V characteristic, and the light state reverse I-V characteristic, estimates and calculates a light
state stationary I-V characteristic that is an I-V characteristic measured in the light state and in the stationary sweep
mode.

US Pat. No. 9,142,104

HAPTIC INFORMATION PRESENTATION SYSTEM AND METHOD

National Institute of Adv...

1. A haptic information processing system comprising:
an information media device comprising haptic information, wherein the information media device further comprises at least
one of an object, a display member, and a wearable device, wherein the haptic information is obtained using at least one of
a finger of an operator, a palm of the operator, a hand of the operator, a leg of the operator, a head of the operator, a
body of the operator, an operation device, and a man-machine interface, and wherein the operator operates at least one of
a surface of the information media device, an inside of the information media device, and a space around the surface of the
information media device; and

a haptic information processing device,
wherein the haptic information processing device comprises:
a reading device that reads the haptic information from the information media device;
a haptic information presentation device that presents haptic information comprising illusion as if the operator operates
the information media device, from the haptic information read by the reading device, by applying a haptic sensory characteristic
of the operator; and

a control device that controls the haptic information presentation device,
wherein the haptic sensory characteristic comprises:
(i) one or more of a physical quantity being given to the operator and a physical quantity being brought by an operation of
the operator, and a sensory quantity to be presented to the operator, or

(ii) a sensory quantity to be presented to the operator,
wherein the haptic sensory characteristic is obtained by using at least one of a nonlinear characteristic, a hysteresis characteristic,
a masking characteristic relating to a haptic sense, a threshold characteristic, and, muscle reflection, and

wherein the sensory quantity comprises at least one of:
a sensory quantity where an integral value of the sensory quantity does not become zero even if a further integral value of
the physical quantity becomes zero; and

a sensory quantity that does not exist physically.

US Pat. No. 9,136,400

SEMICONDUCTOR DEVICE

NISSAN MOTOR CO., LTD., ...

1. A diode device having a first electrode and a second electrode, comprising:
a first semiconductor layer of a first conductivity type, the first semiconductor layer including impurities at a first impurity
concentration; and

a second semiconductor layer of a second conductivity type which is different from the first conductivity type, the second
semiconductor layer being joined to the first semiconductor layer and including impurities at a second impurity concentration
which is higher than the first impurity concentration,

wherein the first electrode is in rectifying contact with the first semiconductor layer and is not in contact with the second
semiconductor layer,

wherein the second electrode is in ohmic contact with the second semiconductor layer and is not in contact with the first
semiconductor layer,

wherein voltage is applied between the first electrode and the second electrode for rectifying the voltage when using the
diode device, and

wherein an energy level of conductive impurities in the first semiconductor layer is located at a deep position beyond a thermal
excitation energy at an operating temperature of the diode device.

US Pat. No. 9,890,360

METHOD FOR PRODUCING INDUCED PLURIPOTENT STEM CELLS

GIFU UNIVERSITY, Gifu-sh...

1. An in vitro method for producing a candidate colony of induced pluripotent stem cells, comprising:
bringing a nuclear reprogramming substance including at least a Distal-less homeobox 4 (DLX4) gene or a translation product
thereof, an OCT3/4 gene or a translation product thereof, and a SOX2 gene or a translation product thereof into contact with
a dental pulp cell to produce the candidate colony.

US Pat. No. 9,819,149

OPTICAL TRANSMITTER IMPLEMENTING WAVELENGTH TUNABLE DIODE

Sumitomo Electrix Industr...

1. An optical transmitter, comprising:
a wavelength tunable laser diode (LD) that emits laser light with a polarization, the wavelength tunable LD having a sampled
grating distributed feedback (SG-DFB) region and a chirped sampled grating Bragg reflector (CSG-DBR) region, the SG-DFB region
forming a cavity that determines a wavelength of the laser light accompanied with the CSG-DBR region;

a feedback unit that generates feedback light by rotating the polarization of a portion of the laser light by a range of 90±5°
and returns the feedback light to the wavelength tunable LD; and

an optical attenuator that attenuates the feedback light, the feedback light reducing frequency noises attributed to the laser
light.

US Pat. No. 9,809,825

METHOD FOR PRODUCING ARCHAEAL PROTEIN

National Institute of Adv...

1. A method of producing an archaeal protein, comprising a step of cultivating a fungus belonging to the genus Talaromyces, wherein the fungus has been transformed with an expression vector comprising:
a promoter region that functions in the fungus;
a secretion signal region located downstream of the promoter region, the secretion signal region encoding a secretion signal
peptide of a cellobiohydrolase gene from the genus Talaromyces;
a coding region for the archaeal protein located downstream of the secretion signal region; and
a terminator region located downstream of the coding region, and
wherein the fungus secretes the archaeal protein.

US Pat. No. 9,698,235

FIELD-EFFECT TRANSISTOR

NATIONAL INSTITUTE OF ADV...

1. A field-effect transistor of an accumulation-layer-operation type, comprising:
a semiconductor layer in which a source region, a channel region, and a drain region that have either an N-type or P-type
conductivity in common are formed; and

a gate electrode disposed adjacent to the channel region via a gate insulating film,
wherein the gate insulating film is made of a dielectric having a change gradient of a relative dielectric constant in which
the relative dielectric constant changes to decrease according to a magnitude of a gate voltage applied to the gate electrode;
and

wherein the dielectric has the change gradient of the relative dielectric constant in which when the gate voltage is modulated
by 0.5 V, the relative dielectric constant becomes lower than or equal to a 0.5-times of the relative dielectric constant
before modulation.

US Pat. No. 9,553,308

NEGATIVE ELECTRODE MATERIAL FOR SODIUM SECONDARY BATTERY AND METHOD FOR PRODUCING SAME, NEGATIVE ELECTRODE FOR SODIUM SECONDARY BATTER, AND SODIUM SECONDARY BATTERY

ISUZU GLASS CO., LTD., O...

13. A negative electrode material for a sodium secondary battery comprising a composite powder of component A and component
B,
wherein (1) the component A is a material capable of electrochemically absorbing and releasing sodium; and
(2) the component B is sulfide or sulfide composite body including sulfur and antimony
wherein the composite powder is a composite powder with a surface of the component A coated with the component B.

US Pat. No. 9,520,278

NEBULIZER AND ANALYZER

NATIONAL INSTITUTE OF ADV...

1. A nebulizer comprising:
an outer tube having a nebulizing outlet at one end thereof;
a first inner tube disposed inside the outer tube and extending in an axis direction of the outer tube, wherein a gas passage
through which a nebulizing gas flows is provided between the first inner tube and outer tube and wherein the first inner tube
has therein a first sample passage through which a first liquid sample flows;

a second inner tube disposed inside the outer tube in parallel with the first inner tube, wherein a gas passage through which
the nebulizing gas flows is provided between the second inner tube and outer tube, and wherein the second inner tube has therein
a second sample passage through which a second liquid sample flows; and

a membranous member disposed at downstream ends of sample outlets in a transport direction of the first and second sample
passages and disposed, such that a gap is provided between the membranous member and the sample outlets provided at respective
ends of the first and second inner tubes,

wherein the gap provides a mixing space, in which the nebulizing gas passing through the gas passages converts the first and
second liquid samples flowing out of the sample outlets into droplets and mixes the droplets to provide a mixed liquid sample,

wherein the nebulizing gas becomes turbulent in the mixing space to mix the droplets, and
wherein the membranous member has a plurality of holes through which the mixed liquid sample samples passes along with the
nebulizing gas for nebulization.

US Pat. No. 9,442,249

METHOD FOR PROCESSING SILICON-BASED WIRE OPTICAL WAVEGUIDE

NATIONAL INSTITUTE OF ADV...

1. A method for processing a silicon-based wire optical waveguide, comprising a step of preparing an optical circuit board
having plural silicon-based wire optical waveguides formed through a supporting layer; a step, for silicon-based wire optical
waveguide that has an end portion among the silicon-based wire optical waveguides, of removing the supporting layer that is
under the end portion of the silicon-based wire optical waveguide; a step of forming a protective film selectively on the
silicon-based wire optical waveguide exclusive of the end portion of the silicon-based wire optical waveguide; and a step
of implanting ions to the silicon-based wire optical waveguide in a particular direction, so as to curve the end portion of
the silicon-based wire optical waveguide to the particular direction in a self-aligned manner.

US Pat. No. 9,216,305

CORE-SHELL-TYPE CERIUM OXIDE MICROPARTICLE, DISPERSION SOLUTION COMPRISING THE MICROPARTICLE, AND PROCESS FOR PRODUCTION OF THE MICROPARTICLE OR DISPERSION SOLUTION

National Institute of Adv...

1. A process of producing core-shell cerium oxide microparticles having a cross-linked polymer layer on a spherical aggregation
of primary nanosize particles, comprising:
mixing a cerium (III) nitrate hydrate and a polymer of polyvinylpyrrolidone (PVP), which has an average molecular weight of
4,000 to 20,000 in terms of polyethylene glycol, in a high-boiling organic solvent to obtain a mixture having a concentration
of the polymer of 80 kg/m3 to 120 kg/m3; and

heating the mixture under reflux at a temperature ranging from 110° C. to 190° C. to give the core-shell cerium oxide microparticles.

US Pat. No. 9,076,906

HETERO-JUNCTION BIPOLAR PHOTOTRANSISTOR WITH IMPROVED NOISE CHARACTERISTIC

NATIONAL INSTITUTE OF ADV...

1. A hetero junction bipolar phototransistor, comprising:
a photo-absorption layer formed of a first conductivity type semiconductor layer, and a collector operating as a barrier layer,
a base layer, and an emitter layer, which are in direct contact with each other in sequence on the photo-absorption layer,

wherein said photo-absorption layer, said collector operating as the barrier layer, said base layer and said emitter layer
forming a first mesa structure, and an emitter contact layer forming a second mesa structure form the phototransistor;

said photo-absorption layer comprises a semiconductor layer with a narrow bandgap corresponding to a light-sensing wavelength
of the phototransistor wherein an energy level in a conduction band edge of the photo-absorption layer is lower than an energy
level in a conduction band edge of the collector operating as the barrier layer, and an energy level in a valence band edge
of the photo-absorption layer is equal to or less than an energy level of a valence band edge of the collector operating as
the barrier layer;

said collector operating as the barrier layer essentially consists of a semiconductor layer of single material composition
with a relatively wider bandgap than a bandgap of said photo-absorption layer where the energy level in the conduction band
edge is higher than the energy level of said photo-absorption layer in the conduction band edge, and the energy level in the
valence band edge is equal to or higher than the energy level of said photo-absorption layer in the valence band edge;

said base layer formed on said collector operating as the barrier layer has an energy level in a conduction band edge which
is equal to or higher than the energy level in the conduction band edge of the collector operating as the barrier layer;

said emitter layer formed on the base layer has a relatively wide bandgap as compared to said base layer, and an energy level
in a valence band of the emitter layer is lower than an energy level in a valence band of the base layer; and

said photo-absorption layer comprises InGaAs, and said collector operating as the barrier layer comprises InGaAsPSb, and said
base layer comprises InGaAsPSb.

US Pat. No. 10,048,689

POSITION CONTROL SYSTEM AND POSITION CONTROL METHOD FOR AN UNMANNED SURFACE VEHICLE

NATIONAL INSTITUTE OF ADV...

1. A position control system for an unmanned surface vehicle, comprising:at least one mooring device fixed on the ground;
a wire fed and wound from the mooring device;
an unmanned surface vehicle connected at the tip end of the wire; and
at least one rudder equipped on the unmanned surface vehicle,
wherein the mooring device includes a first processor for controlling the feeding and winding of the wire and a first communication system,
the unmanned surface vehicle includes a GPS and an inertia measurement unit for sensing the position and posture of the unmanned surface vehicle, a second processor for drive-controlling the rudder, and a second communication system, and
the first and second processors send and receive information with each other via the first and second communication systems, such that
the position of the unmanned surface vehicle is controlled to reach the target.

US Pat. No. 9,513,567

EXPOSURE APPARATUS AND EXPOSURE METHOD

National Institute of Adv...

1. An exposure apparatus for exposing a wafer in a predetermined size through a mask having a same size as a size of the wafer,
comprising:
a shared conveying device configured to convey the wafer and the mask;
an exposure stage on which the wafer conveyed by the conveying device is to be installed;
a mask holder mounted to face the exposure stage, the mask conveyed by the conveying device being to be installed on the mask
holder; and

an exposure light source mounted to face the exposure stage via the mask holder,
wherein the conveying device is configured to convey the wafer and the mask to between the exposure stage and the mask holder.

US Pat. No. 9,254,540

MOUNTING STRUCTURE OF MOVABLE MANUFACTURING DEVICE, FIXING STRUCTURE AND MOVABLE MANUFACTURING DEVICE

NATIONAL INSTITUTE OF ADV...

1. A mounting structure of movable manufacturing device, comprising:
a fixing structure which is installed on a floor to mount the movable manufacturing device,
a leg portion which is installed on a bottom plate of the movable manufacturing device to be placed on the fixing structure,
a positioning mechanism which determines a placing position of the leg portion using a floor side positioning member equipped
by the fixing structure and a leg side positioning member equipped by the leg portion, when the leg portion is placed on the
placing position,

a coupling mechanism which prevents the movable manufacturing device from falling, by coupling the leg portion with the fixing
structure, using a floor side coupling member equipped by the fixing structure and a leg side coupling member equipped by
the leg portion, after the leg portion is placed on the placing position, and

a stopper mechanism to stop the movable manufacturing device approximately right above the placing position when the movable
manufacturing device is carried above the fixing structure approximately horizontally.

US Pat. No. 9,153,315

SOLID MEMORY

NATIONAL INSTITUTE OF ADV...

1. A method for recording data in a solid memory mainly made of tellurium (Te), comprising:
recording data in the solid memory by causing phase-transformation of a substance constituting the solid memory so as to change
electric characteristics of the solid memory, the substance including a laminated structure of artificial superlattices, the
laminated structure including alternating first and second thin film layers of binary alloys,

the phase-transformation being caused by germanium (Ge) atoms reversibly and anisotropically diffusing from the first thin
film layer to interfaces between the first thin film layer and the second thin film layer.

US Pat. No. 9,149,762

DEFECTLESS HYDROGEN SEPARATION MEMBRANE, PRODUCTION METHOD FOR DEFECTLESS HYDROGEN SEPARATION MEMBRANE AND HYDROGEN SEPARATION METHOD

National Institute of Adv...

1. A method for producing a defect-free hydrogen separation membrane, comprising:
an activation step of immersing one surface of a porous ceramic support in a solution containing an activating metal;
a first metal layer forming step of immersing said one surface of the porous ceramic support in a plating solution containing
palladium ions to form a first metal layer containing palladium without artificially producing pressure-differential between
the one surface and the other surface of a porous support; and

a pressure difference applying step of immersing said one surface of the porous support with said first metal layer in a plating
solution containing palladium ions, such that a pressure at the one surface side of the porous support is higher than a pressure
at the other surface side,

wherein the first metal layer forming step is, substantially without abrading or polishing the first metal layer, followed
by the pressure difference applying step; and

wherein palladium closes defects being open on the surface of said first metal layer during deposition on the surface.

US Pat. No. 10,086,353

METHOD AND APPARATUS FOR PRODUCING DISPERSION

National Institute of Adv...

1. A method for producing a dispersion of a reaction product between first and second substances, the method comprising the step of:electrostatically spraying the first substance which is dissolved or dispersed in a first liquid, from a spray port of a nozzle which is:
disposed in a phase of a low dielectric liquid out of two phases of a phase of a second liquid and the phase of the low dielectric liquid arranged one on top of the other with two-phase separation; or
disposed at a position apart from the two phases but close to the phase of the low dielectric liquid in such a manner that the spray port of the nozzle is oriented to a liquid surface of the phase of the low dielectric liquid,
while an electrode is disposed in the phase of the second liquid, and the second substance is dissolved or dispersed in any one of a second liquid and a low dielectric liquid,
so that droplets, charged by generating a potential difference between the nozzle and the electrode, of the first liquid in which the first substance has been dissolved or dispersed, are electrostatically sprayed from the spray port of the nozzle, and the first liquid which has been electrostatically sprayed, passes through the phase of the low dielectric liquid and reaches the phase of the second liquid to obtain the reaction product dispersed in the phase of the second liquid or in the phase of the low dielectric liquid.

US Pat. No. 10,029,241

METHOD FOR PRODUCING CATALYST FOR CYCLIC CARBONATE SYNTHESIS

MARUZEN PETROCHEMICAL CO....

1. A method for producing a catalyst for cyclic carbonate synthesis, the method comprising:(a) obtaining a catalyst precursor comprising a haloalkyl group X—R1— by reacting a silane compound comprising the haloalkyl group with a silica gel having an amount of adsorbed water of 1% by mass or less wherein the silane compound is of formula (1):
X—R1—Si(OR2)3  (1)
wherein R1 is a linear or branched alkylene group having 2 to 8 carbon atoms;
wherein R2 is an alkyl group having 1 to 4 carbon atoms, and
wherein X is a halogen atom, and
(b) reacting the catalyst precursor with a tertiary phosphine to obtain the catalyst for cyclic carbonate synthesis wherein the tertiary phosphine is of formula (2):

wherein R3 to R5 each independently represent an alkyl group having 1 to 8 carbon atoms,
wherein a molar ratio of a halogen content to a phosphorus content [halogen]/[phosphorus] in the catalyst for cyclic carbonate synthesis is from 1.0 to 1.6, and
wherein the halogen content in the catalyst for cyclic carbonate synthesis is from 0.25 to 0.8 mmol per 1 g of the catalyst,
wherein the obtaining (a) and the reacting (b) are carried out in a hydrocarbon solvent selected from the group consisting of toluene, xylene and ethylbenzene.

US Pat. No. 9,966,525

CARBON NANOFIBER ACTUATOR

NATIONAL INSTITUTE OF ADV...

1. An electroconductive film for an actuator formed from a gel composition comprising:carbon nanofibers,
an ionic liquid, and
a polymer,
wherein the carbon nanofibers comprise a melt spun and carbonized aromatic mesophase pitch,
wherein the carbon nanofibers comprise alkali-activated carbon nanofibers,
wherein the alkali activated carbon nanofibers undergo alkali-activation treatment immediate after carbonization.
US Pat. No. 9,908,972

PHOTODEGRADABLE CROSS-LINKING AGENT, PHOTODEGRADABLE GEL, CELL CULTURE INSTRUMENT, CELL ARRANGEMENT-SORTING APPARATUS, CELL ARRANGEMENT METHOD, CELL SORTING METHOD, TISSUE FORMING METHOD, AND TISSUE

NATIONAL INSTITUTE OF ADV...

1. A photodegradable cross-linking agent comprising:
a polyethylene glycol main chain which has three or more branched chains; and
a photodegradable benzyl group which is disposed on the terminus of the polyethylene glycol main chain having the branched
chains,

the benzyl group having an active ester group, which is reactive with an amino group or a hydroxyl group, and one or more
nitro groups in a benzene ring of the benzyl group.

US Pat. No. 9,856,148

METHOD FOR PRODUCING TITANIUM OXIDE USING POROUS TITANIUM COMPOUND IMPREGNATED WITH SOLUTION

NATIONAL INSTITUTE OF ADV...

1. A method for producing an alkali metal titanium oxide, comprising impregnating a pore interior and a surface of a porous
titanium compound particle with an alkali metal-containing component, and firing the particle, wherein the porous titanium
compound particle has a specific surface area of 50 m2/g or larger and smaller than 1,000 m2/g, and the porous titanium compound particle has a particle size of 0.1 ?m or larger and smaller than 100 ?m.

US Pat. No. 9,633,439

IMAGE PROCESSING SYSTEM, AND IMAGE PROCESSING METHOD

National Institute of Adv...

1. An image processing system comprising:
a projection device for projecting a projected pattern to an observation target;
an imaging device for capturing the projected pattern; and
an image processing apparatus connected to the projection device and the imaging device, for performing shape reconstruction
based on an input image including the projected pattern, the image processing apparatus including a personal computer configured
to:

fetch the input image captured by the imaging device and performing line detection for the projected pattern projected by
the projection device, wherein the projected pattern is a grid pattern formed of wave lines, the wave lines are wavy curves
having predetermined periodicity, the grid pattern formed of the wave lines is formed of a plurality of wave lines that are
arranged at predetermined intervals, the grid pattern is a set of wave lines that intersect each other in two directions,
and the interval of the wave lines in one of the directions is not equal to an integral multiple of a wavelength for the wave
line in the other direction; and

perform shape reconstruction by associating intersection points of vertical and horizontal lines extracted by the line detection
with the projected pattern.

US Pat. No. 9,539,584

MAGNETIC SEPARATOR

NATIONAL INSTITUTE OF ADV...

1. A weak magnetic force magnetic separator, comprising:
a belt conveyor configured to convey separation target particles; and
a suspended magnet unit provided above the belt conveyor at a distance from the belt conveyor,
wherein said weak magnetic force magnetic separator, further comprises at least one swing pin-gate above the belt of the belt
conveyor,

wherein the separation target particles conveyed over the belt are prompted to change postures over the belt upon contacting
a pin of the pin-gate,

wherein the magnet unit magnetically recovers ferromagnetic bodies and refuses to magnetically recover weakly magnetic bodies
by magnetically attracting, with a uniform, weak magnetic force, the separation target particles conveyed over a belt of the
belt conveyor,

wherein with a length of the magnet unit in its longer direction being greater than a belt width of the belt, and with the
magnet unit placed such that its longer direction is aligned with a direction of the belt width and its both ends overhang
the belt width, and such that a distance from a surface of the belt is constant across its longer direction, variations in
magnetic flux density in the direction of the belt width over the surface of the belt facing the magnet unit are 10% or less
within a weak magnetic force range of from over 0 gauss to 700 gauss and

wherein the weak magnetic force magnet separator separates the separation target particles based on shapes thereof into those
having a shape that rolls down an inclined surface by gravity and those having a shape that does not roll down the inclined
surface by gravity, by inclining the belt of the belt conveyor toward a direction that is at a right angle from a moving direction
of the belt.

US Pat. No. 9,434,936

METHOD FOR REMOVING CELLS

NATIONAL INSTITUTE OF ADV...

1. A method for removing target cells from a cell culture substrate, the method comprising:
providing a cell culture substrate including a substrate and a layer containing a photo-acid generator formed on a surface
of the substrate:

adhering cells to the surface of the layer containing the photo-acid generator which generates an acidic substance upon irradiation
with light,

generating the acidic substance by irradiating only a region of the substrate containing the photo-acid generator layer beneath
target cells to be removed, and

removing the target cells from the region of the irradiated substrate by the action of the acidic substance generated from
the irradiated layer containing the photo-acid generator beneath the target cells.

US Pat. No. 9,209,054

DEVICE MANUFACTURING APPARATUS

NATIONAL INSTITUTE OF ADV...

1. A device manufacturing system, comprising:
a plurality of predetermined processing apparatuses that are movable and respectively have sealed-type processing sections
which shut off external air for performing predetermined processes of a plurality of manufacturing processes used for manufacturing
a predetermined device;

a sealed type container operatively associated with said plurality of predetermined processing apparatuses for conveyance
which stores a wafer to be processed by the plurality of predetermined processing apparatuses and shuts off external air for
conveying the wafer among the plurality of predetermined processing apparatuses; and

sealed type wafer entry/exit front chambers that are mounted respectively to the same positions of the respective predetermined
processing apparatuses, respectively configure a part of the respective predetermined processing apparatuses, and shut off
external air for passing the wafer between the processing section and the container for conveyance,

wherein: the predetermined processing apparatuses are identical in outside shape to each other; and the wafer entry/exit front
chambers are identical in wafer-passing mechanism and outside shape to each other.

US Pat. No. 9,134,346

METHOD OF MAKING CONTACT PROBE

NATIONAL INSTITUTE OF ADV...

1. A method of making a contact probe used for measuring and evaluating a high speed and high frequency characteristic of
a measuring object, said method comprising:
a step of making a first printed wiring board having a signal electrode and a ground electrode used as a contact part of the
contact probe with respect to the measuring object, in which the signal electrode and the ground electrode are formed of a
metal wiring pattern;

a step of making a second printed wiring board, separate from the first printed wiring board, with a coaxial line structure
having a shield electrode which encloses a signal line and the surroundings of said signal line through an insulating layer;
and

a step of electrically connecting the signal line of said second printed wiring board to the signal electrode of said first
printed wiring board, and electrically connecting the shield electrode of said second printed wiring board to the ground electrode
of said first printed wiring board.

US Pat. No. 9,834,536

METHOD FOR PRODUCING CATALYST FOR CYCLIC CARBONATE SYNTHESIS

National Institute of Adv...

1. A method for producing a catalyst, comprising:
obtaining a catalyst precursor having a haloalkyl group or a haloaryl group, by reacting a silane compound having a haloalkyl
group or a haloaryl group with a silica gel having an average pore diameter of 3.5 nm to 50 nm, and

obtaining the catalyst, by reacting the catalyst precursor with a tertiary phosphine, at a temperature of 100-160° C. for
10-50 hours in xylene, wherein the catalyst formed by the reacting has a [halogen]/[phosphorus] molar ratio of 0.8 to 1.5,

wherein the catalyst has a phosphorus content of 0.25 mmol to 0.6 mmol per 1 g of the catalyst,
wherein the silane compound has formula (1):
X—R1—Si(OR2)3  (1)

wherein R1 represents a linear or branched alkylene group having 2 to 8 carbon atoms, an arylene group, an alkarylene group, an arylenealkylene
group or an alkylenearylene group; R2 represents an alkyl group having 1 to 4 carbon atoms; and X represents a halogen atom, and

wherein the tertiary phosphine has formula (2):

wherein R3 to R5 each independently represents an alkyl group having 1 to 8 carbon atoms, an aryl group, an aralkyl group, an alkoxyalkyl group
or an alkoxy substituted aryl group.

US Pat. No. 9,518,238

TRANSESTERIFICATION CATALYST AND METHOD FOR PRODUCING BIODIESEL FUEL USING TRANSESTERIFICATION CATALYST

National Institute of Adv...

1. A biodiesel fuel production method, comprising:
obtaining a fatty acid alkyl ester through a transesterification reaction between an oil and an alcohol in the presence of
a transesterification catalyst that comprises a titanium-containing mesoporous silica,

wherein the titanium-containing mesoporous silica is SBA-15 and has a pore diameter of from 6.5 nm to 8 nm;
wherein a raw material oil of the biodiesel fuel comprises 1% to 10% of water and fatty acid relative to a total amount of
oil in the raw material oil; and

wherein the biodiesel fuel production method does not comprise a step of removing a water content and a free fatty acid during
transesterification; and

wherein the mesoporous silica has a Ti/Si molar ratio of from 0.03 to 0.07.

US Pat. No. 9,496,345

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR STRUCTURE

NATIONAL INSTITUTE OF ADV...

1. A semiconductor structure, comprising:
a p-type silicon carbide single crystal layer that has an ?-type crystal structure, contains aluminum at an impurity concentration
of 1×1019 cm?3 or higher, and has a thickness of 50 ?m to 300 ?m

wherein the p-type silicon carbide single crystal layer does not contain an impurity except the aluminum; and
wherein the p-type silicon carbide single crystal layer has a resistivity of 100 m?cm or lower.
US Pat. No. 9,371,519

COMPLEX TYPE SUGAR CHAIN HYDROLASE

National Institute of Adv...

1. A cDNA which encodes a protein having endo-?-N-acetylglucosaminidase activity wherein the protein comprises an amino acid
sequence selected from the group consisting of:
(1) SEQ ID NO: 1;
(2) the amino acid sequence obtained by deletion, substitution, insertion and/or addition of any of 1-20 amino acids in SEQ
ID NO: 1,

(3) the amino acid sequence having an identity of 90% or more with SEQ ID NO: 1;
(4) the amino acid sequence encoded by SEQ ID NO: 2; and
(5) the amino acid sequence encoded by the nucleotide sequence of the polynucleotide which hybridizes with the polynucleotide
having the nucleotide sequence complementary to SEQ ID NO: 2 under stringent hybridization conditions of (a) 6×SSC (1×SSC
is 0.15 M NaCl, 0.015 M sodium citrate, pH 7.0), 0.5% SDS, 5×Denhardt's (Denhardt's, 0.1% bovine serum albumin (BSA), 0.1%
polyvinyl pyrrolidone, and 0.1% Ficoll 400) and 100 ?g/ml salmon sperm DNA, at 50° C. for 4 hours to overnight, wherein a
specific hybrid is formed and less than 10% of mismatch in the entire nucleotide sequence is allowed or (b) 2×SSC, 0.5% SDS,
25% formamide, 5×Denhardt's, and 100 ?g/ml salmon sperm DNA, at 55° C. for 4 hours to overnight, wherein a specific hybrid
is formed and less than 10% of mismatch in the entire nucleotide sequence is allowed.