US Pat. No. 9,408,320

POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module comprising:
a power module substrate provided with a circuit layer on one surface of an insulating layer; and
a semiconductor element bonded onto the circuit layer, wherein
a copper layer composed of copper or a copper alloy is provided on the surface of the circuit layer onto which the semiconductor
element is bonded,

a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element,
an alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more
and 40% by mass or less of Cu is formed at an interface between the solder layer and the circuit layer,

a thickness of the alloy layer is set to be within a range of 2 ?m or more and 20 ?m or less, and
a thermal resistance increase rate is less than 10% after loading power cycles 100,000 times under the condition where an
energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test.

US Pat. No. 9,426,915

POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module comprising:
a power module substrate provided with a circuit layer on one surface of an insulating layer; and
a semiconductor element bonded onto the circuit layer, wherein
a copper layer composed of copper or a copper alloy is provided on the surface of the circuit layer onto which the semiconductor
element is bonded,

a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element,
an alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more
and 40% by mass or less of Cu is formed at an interface between the solder layer and the circuit layer,

a thickness of the alloy layer is set to be within a range of 2 ?m or more and 20 ?m or less, and
a thermal resistance increase rate is less than 10% after loading power cycles 100,000 times under the condition where an
energization time is 5 seconds and a temperature difference is 80° C. in a power cycle test.

US Pat. No. 9,421,583

RINSING APPARATUS AND RINSING METHOD FOR POLYCRYSTALLINE SILICON LUMP

MITSUBISHI MATERIALS CORP...

1. A rinsing method for a polycrystalline silicon lump which is obtained by cutting or breaking a rod of polycrystalline silicon,
comprising steps of:
a providing step of providing:
a wash tank;
an inner cage being disposed in the wash tank by resting a handle formed at an upper end of the inner cage on an upper part
of the wash tank so as to be held in a state of being hung in the wash tank, and having a plurality of openings; and

a wash basket being disposed in the inner cage and having a plurality of through holes which are larger than the openings
of the inner cage;

a charging step of charging the polycrystalline silicon lump in the wash basket;
a supplying step of supplying rinse water to the wash tank from a bottom part of the wash tank continuously; and
a swinging step of swinging the wash basket in the inner cage in the rinse water with overflowing the rinse water from an
upper portion of the wash tank, wherein

powders or chips of silicon and impurities are removed from a surface of the polycrystalline silicon lump in the wash basket,
the powders or the chips and the impurities fallen from the wash basket through the through holes and trapped at the inner
cage are recovered from the inner cage, and

the powders or the chips and the impurities floating in the rinse water are discharged from the wash tank along with the rinse
water.

US Pat. No. 9,530,717

BONDED BODY AND POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A bonded body comprising:
a ceramic member made of ceramics; and
a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material
and a Ti material,

wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and
an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed
at a bonded interface between the ceramic member and the Cu member.

US Pat. No. 9,435,691

INFRARED SENSOR

MITSUBISHI MATERIALS CORP...

1. An infrared sensor comprising:
an insulating film;
a first heat sensitive element and a second heat sensitive element that are disposed on one surface of the insulating film
so as to be separated apart from one another;

a first conductive wiring film and a second conductive wiring film that are formed on one surface of the insulating film and
are respectively connected to the first heat sensitive element and the second heat sensitive element;

an infrared reflection film that is disposed on the other surface of the insulating film so as to face the second heat sensitive
element;

a plurality of terminal electrodes that are connected to the first wiring film and the second wiring film, are formed on one
end of the other surface of the insulating film, and are configured to be fitted into an external connector of a circuit substrate
in perpendicular to the substrate;

an edge reinforcing plate that is adhered to one end of one surface of the insulating film; and
a mounting hole that is formed on the other end of the insulating film and configured to be fixed to an external member with
facing to the substrate.

US Pat. No. 9,447,479

METHOD OF TREATING RECYCLABLE RAW MATERIALS

MITSUBISHI MATERIALS CORP...

1. A method of treating recyclable raw materials containing valuable metals, the method comprising the steps of:
feeding recyclable raw materials containing valuable metals into a rotary kiln furnace in which a refractory product having
an Al2O3—Cr2O3 content of 70% or greater is used for an inner wall;

feeding combustible shredder residue into the rotary kiln furnace,
feeding an additive containing SiO2 as a major component into the rotary kiln furnace so as to increase a viscosity of a slag flowing along the inner wall, thereby
the recyclable raw materials are attached on the slag having a high viscosity such that at least part of the recyclable raw
materials is exposed to the inside of the rotary kiln furnace; and

burning/melting the recyclable raw materials attached on the slag in the rotary kiln furnace wherein a ratio of the weight
of the additive to the sum of the weight of the recyclable raw materials, the weight of the shredder residue, and the weight
of the additive which are charged into the rotary kiln furnace is 0.0035 or higher and 0.5 or lower.

US Pat. No. 9,285,506

ITO FILM, ITO POWDER USED IN MANUFACTURING SAME ITO FILM, MANUFACTURING METHOD OF ITO POWDER, AND MANUFACTURING METHOD OF ITO FILM

MITSUBISHI MATERIALS CORP...

1. An ITO film having a band gap in a range of 4.0 eV to 4.5 eV, wherein the ITO film has an L*a*b* color tone in which L*
is from 99.5 to 99.7, a* is from ?0.35 to ?0.17, and b* is from ?0.24 to ?0.06.

US Pat. No. 9,416,014

METHOD FOR PRODUCING TRICHLOROSILANE

MITSUBISHI MATERIALS CORP...

1. A method for producing trichlorosilane, using an apparatus comprising:
a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product
gas containing trichlorosilane and hydrogen chloride;

a heating mechanism including a heater that heats the interior of the reaction vessel, encloses the reaction vessel, and heats
the interior of the reaction vessel;

wherein a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned
by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed
communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls
in order from the inside, and an outlet of the reaction passageway is at an outermost small space,

a gas supply section which is in communication with the innermost small space of the plurality of small spaces that supplies
the supply gas in the reaction vessel, and is formed only at a center of the reaction vessel; and

a plurality of gas discharge sections which are connected to the outermost small space that discharges the reaction product
gas from the reaction vessel to the outside,

the gas supply section and the gas discharge sections are connected to the reaction passageway, and
said method comprises a step of supplying gas from the gas supply section, moving the gas from the innermost small space of
the plurality of small spaces to the outermost small space, and discharging gas from the gas discharge sections, with the
flow direction of the gas repetitively changes between a downward direction and an upward direction every time the gas moves
to the outside of the reaction passageway.

US Pat. No. 9,414,512

SUBSTRATE FOR POWER MODULE, SUBSTRATE WITH HEAT SINK FOR POWER MODULE, POWER MODULE, METHOD FOR PRODUCING SUBSTRATE FOR POWER MODULE, AND METHOD FOR PRODUCING SUBSTRATE WITH HEAT SINK FOR POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
a ceramic substrate composed of AlN or Si3N4; and

a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate;
wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in said metal plate,
an Ag concentration in said metal plate in the vicinity of the interface with said ceramic substrate is greater than or equal
to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in said metal
plate in the vicinity of the interface with said ceramic substrate is greater than or equal to 0.01% by mass and less than
or equal to 5% by mass,

an oxygen high concentration part having an oxygen concentration two or more times the oxygen concentration in the crystal
grain of said ceramic substrate is formed in the bonding interface between said metal plate and said ceramic substrate, and

the thickness of said oxygen high concentration part is less than or equal to 4 nm.

US Pat. No. 9,528,181

SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A sputtering target having a component composition containing 20 to 40 at % of Ga, 0.1 to 3 at % of Sb, and the balance
composed of Cu and unavoidable impurities.

US Pat. No. 9,468,042

APPARATUS FOR PRODUCING TRICHLOROSILANE

MITSUBISHI MATERIALS CORP...

1. An apparatus for producing trichlorosilane from raw gas including silicon tetrachloride and hydrogen, comprising:
a reaction chamber being supplied with the raw gas configured for generating reacted gas including trichlorosilane and hydrogen;
a plurality of heaters, each heater comprises:
a heating portion standing vertically with respect to a bottom of the reaction chamber, aligned on a first group of concentric
circles in the reaction chamber, and formed in an inverted U-shape with comprising an inverted U-shaped heating surface; and

basal portions holding the heating portion;
a plurality of electrodes being connected to the basal portions of the heaters and supplying electrical current to each heating
portion; and

a plurality of radiation plates standing vertically with respect to the bottom of the reaction chamber in the reaction chamber,
aligned on a second group of concentric circles, which are different from the first group of concentric circles, in the reaction
chamber, shaped with a same height as the heating portion, disposed between two adjacent heating portions of the heaters facing
each other in a radial direction, spaced from the heating portions, and each comprising a surface parallel facing the heating
portion to decrease a block facing area of the two adjacent heating portions not to be in a face-to-face state,

wherein
the heating portions are heated by the electrical current supplied via the electrodes and the basal portions, and heat the
raw gas;

the heating portions are obstructed by the radiation plates so as not to heat each other in a radical direction directly by
radiation heat of the heating portions;

the radiation plates are directly heated by the radiation heat of the heating portions, and heat the raw gas.

US Pat. No. 9,428,964

EXCAVATING TOOL

MITSUBISHI MATERIALS CORP...

1. An excavating tool comprising:
a casing pipe that forms a cylindrical shape about an axis line and in which a stepped portion whose inner diameter is decreased
by one step is formed in an inner peripheral portion of a distal end;

an inner bit which has a contact portion which can come into contact with the stepped portion on an outer periphery, and is
inserted into the casing pipe from a rear end side in the direction of the axis line to protrude its distal end portion from
a distal end of the casing pipe;

an engagement convex portion that is disposed on the outer periphery of the distal end portion of the inner bit so as to be
retractable;

a ring bit that forms an annular shape and is arranged around the distal end portion of the inner bit protruding from the
distal end of the casing pipe; and

an engagement concave portion that is formed in an inner peripheral portion of the ring bit,
wherein in such a manner that the engagement convex portion protrudes to an outer peripheral side and engages with the engagement
concave portion, the ring bit is rotatable around the axis line integrally with the inner bit in a rotating direction during
excavation, and the ring bit is locked so as not to be pulled out to the distal end side of the inner bit in the direction
of the axis line,

wherein the engagement convex portion is caused to retreat to an inner peripheral side, thereby the ring bit is capable of
being pulled out to the distal end side of the inner bit, and

wherein an outer diameter of the engagement convex portion is smaller than an inner diameter of the casing pipe.

US Pat. No. 9,499,441

CUTTING TOOL MADE OF CUBIC BORON NITRIDE-BASED SINTERED MATERIAL

MITSUBISHI MATERIALS CORP...

1. A cutting tool made of cubic boron nitride-based sintered material, comprising:
cubic boron nitride particles as a hard phase component, wherein
an average size of the cubic boron nitride particles is in a range of 0.5 to 8 ?m,
a portion of each of the cubic boron nitride particles is coated with aluminum oxide film having an average thickness of 10
to 90 nm on surfaces thereof, and

a rift is partially formed in the aluminum oxide film.

US Pat. No. 9,504,144

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, METHOD OF MANUFACTURING POWER MODULE SUBSTRATE, AND COPPER MEMBER-BONDING PASTE

MITSUBISHI MATERIALS CORP...

1. A method of manufacturing a power module substrate including a copper plate that is formed of copper or a copper alloy
and is laminated and bonded on a surface of a ceramic substrate, the method comprising:
a copper member-bonding paste coating process of coating a copper member-bonding paste and forming an Ag-nitride-forming element
layer, which contains Ag and a nitride-forming element, on at least one of a bonding surface of the ceramic substrate and
a bonding surface of the copper plate;

a laminating process of laminating the ceramic substrate and the copper plate through the Ag-nitride-forming element layer;
a heating process of pressing and heating a laminate of the ceramic substrate and the copper plate in a laminating direction
to form a molten metal region at an interface between the ceramic substrate and the copper plate; and

a solidification process of solidifying the molten metal region to bond the ceramic substrate and the copper plate to each
other,

wherein the copper member-bonding paste includes a powder component containing Ag and the nitride-forming element, a resin,
and a solvent, and the powder component contains 0.4 mass % to 75 mass % of the nitride-forming element and a balance consisting
of Ag and unavoidable impurities,

the copper member-bonding paste coating process is configured to form Ag-nitride-forming element layer including the nitride-forming
element having an average equivalent thickness of 0.03 ?m to 6.15 ?m or less when measured by an X-ray fluorescent analysis
thickness meter, and

in the heating process, the copper plate and the ceramic substrate are heated while being pressed by a pressure of 1 kgf/cm2 to 35 kgf/cm2 in a laminating direction thereof, and Ag is diffused to the copper plate side to form the molten metal region at the interface
between the ceramic substrate and the copper plate and to form a nitride layer on a surface of the ceramic substrate.

US Pat. No. 9,493,359

APPARATUS FOR PRODUCING TRICHLOROSILANE

MITSUBISHI MATERIALS CORP...

1. An apparatus for producing trichlorosilane, comprising:
a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to an internal reaction
passageway to produce a reaction product gas containing trichlorosilane and hydrogen chloride;

a heating mechanism including a heater that is disposed outside the reaction vessel, encloses the reaction vessel, and heats
the interior of the reaction vessel;

a gas supply section that supplies the supply gas in the reaction vessel and is formed only at a center of the reaction vessel;
and

a plurality of gas discharge sections that each section separately discharges the reaction product gas from the reaction vessel
to the outside and are concentrically disposed with the heater and the gas supply section,

wherein
the reaction passageway includes:
a supply side passageway that is connected to the gas supply section at a central portion of the reaction vessel and flows
the supply gas toward the outside while meandering in the reaction vessel, where an outlet of the supply side passageway is
at outermost and a bottom of the reaction vessel;

a return passageway that is connected to a downstream end of the supply side passageway and extends to the central portion
of the reaction vessel; and

a discharge side passageway that is disposed so as to be connected to a downstream end of the return passageway and to adjoin
the supply side passageway of the central portion of the reaction vessel, the discharge side passageway being connected to
the plurality of gas discharge sections,

wherein the gas supply section and the plurality of gas discharge sections are connected to an inlet and the outlet of the
reaction passageway, respectively, and

wherein the reaction vessel includes a plurality of reaction tubular walls that are disposed concentrically with the heater
and the gas supply section and constitute a columnar space and a plurality of tubular spaces so as to form the reaction passageway.

US Pat. No. 9,080,227

COPPER ALLOY SHEET AND METHOD OF MANUFACTURING COPPER ALLOY SHEET

Mitsubishi Shindoh Co., L...

1. A copper alloy sheet, comprising:
28.0 mass % to 35.0 mass % of Zn, 0.15 mass % to 0.75 mass % of Sn, 0.005 mass % to 0.05 mass % of P, and a balance consisting
of Cu and unavoidable impurities,

wherein an average grain size of the copper alloy sheet is 2.0 ?m to 7.0 ?m,
a sum of an area ratio of a ? phase and an area ratio of a ? phase in a metallographic structure of the copper alloy sheet
is 0% to 0.9%,

a Zn content [Zn] (mass %) and a Sn content [Sn] (mass %) satisfy relationships of 44?[Zn]+20×[Sn]?37 and 32?[Zn]+9×([Sn]?0.25)1/2?37, and

wherein the copper alloy sheet is manufactured by a manufacturing process including a finish cold-rolling process of cold-rolling
a copper alloy material.

US Pat. No. 9,101,063

POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
a ceramics substrate composed of Si3N4, having a top face;

a metal plate composed of aluminum having a purity of 99.99% or more and joined to the top face of the ceramics substrate
with a brazing filler metal including a melting-point lowering element interposed therebetween; and

a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having
an oxygen concentration that is greater than an oxygen concentration in the metal plate and in the ceramics substrate, and
having a thickness of less than or equal to 4 nm,

wherein a mass ratio of Al, Si, O, and N is Al:Si:O:N=15 to 50 wt %:25 to 50 wt %:20 wt % or less:10 to 40 wt % when the joint
interface is analyzed by an energy dispersive X-ray spectroscopy.

US Pat. No. 9,238,876

METHOD OF WASHING POLYCRYSTALLINE SILICON, APPARATUS FOR WASHING POLYCRYSTALLINE SILICON, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON

MITSUBISHI MATERIALS CORP...

1. A method of washing polycrystalline silicon lumps produced by the Siemens method comprising:
a step of acid cleaning in which the polycrystalline silicon lumps retained in a basket are cleaned with an acid solution
in an acid clean bath;

a step of transferring the basket retaining the acid cleaned polycrystalline silicon lumps to a supporting surface of a platform
provided directly on the bottom plate of a water cleaning bath filled with pure water, a cross section of the supporting surface
taken along the longitudinal direction of the water cleaning bath being parallel to the cross section of the bottom plate
also taken along the longitudinal direction of the water cleaning bath and higher than the bottom plate of the water cleaning
bath in a vertical direction;

a step of overflowing pure water by supplying pure water to the cleaning bath after the step of transferring;
a step of immersing the polycrystalline silicon lumps in the pure water after the step of overflowing in the water cleaning
bath for at least 2 hours to remove residual of the acid solution on surfaces of the polycrystalline silicon lumps, the pure
water cleaning tank provided with a pure water supply device, which is positioned to one end of the water cleaning bath in
a longitudinal direction of the water cleaning bath and a pure water drainage device, which is positioned to the other end
of the water cleaning bath in the longitudinal direction and to the bottom plate of the water cleaning bath;

a step of measuring an electrical conductivity C of the pure water by an electrical conductivity measuring device provided
in a vicinity of a feed-water inlet of the pure water supply device after the step of immersing;

a step of repeating the step of immersing after replacing the pure water in the water cleaning bath with fresh pure water
when the electrical conductivity is more than 2 ?S/cm in the step of measuring;

a step of ending the step of immersing in a case where the electrical conductivity C measured in the step of measuring is
2 ?S/cm or lower,

wherein,
the bottom plate of the water cleaning bath is sloped down toward the water drainage device in the longitudinal direction
the water cleaning bath with respect to the bottom plate,

the supporting surface of the platform is sloped in a width direction of the water cleaning bath,
a plurality of through-holes are provided between the lower end surface of the platform and the bottom surface of the water
cleaning bath in the longitudinal direction of the water cleaning bath.

US Pat. No. 9,437,405

HOT ROLLED PLATE MADE OF COPPER ALLOY USED FOR A SPUTTERING TARGET AND SPUTTERING TARGET

MITSUBISHI MATERIALS CORP...

1. A hot rolled plate for a sputtering target, said hot rolled plate comprising:
a copper alloy, wherein
the copper alloy contains 0.5 to 10.0 at % of Ca and the balance consisting of Cu and inevitable impurities,
an average grain size of Cu-? phase crystal grains is 5 to 60 ?m in a Cu matrix, and
Cu—Ca-based crystals are dispersed in the Cu matrix.

US Pat. No. 9,353,426

SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY

MITSUBISHI MATERIALS CORP...

1. A method of producing a silver-white copper alloy, comprising the steps of:
(a) providing a silver-white copper alloy, comprising:
51.0 mass % to 57.0 mass % of Cu,
9.0 mass % to 12.5 mass % of Ni,
0.0003 mass % to 0.010 mass % of C,
0.0005 mass % to 0.030 mass % of Pb, and
with a balance of Zn and inevitable impurities,
and satisfying a relationship of 65.5?[Cu]+1.2×[Ni]?69.0 between an amount of Cu [Cu] (mass %) and an amount of Ni [Ni] (mass
%),

and satisfying a relationship of 0.58?[Zn]/[Cu]<0.7 between an amount of Cu [Cu] (mass %) and an amount of Zn [Zn] (mass %);
(b) hot-rolling the silver-white copper alloy; and
(c) cooling the hot-rolled silver-white copper alloy without quenching from a temperature immediately after the hot-rolling
to a room temperature, wherein a cooling rate of the hot-rolled silver-white copper alloy in a temperature range of 400° C.
to 500° C. is higher than or equal to 1° C./sec to provide a metal structure of the silver-white copper alloy having an area
ratio of ? phases dispersed in an ?-phase matrix is 0% to 0.9%,

wherein the silver-white copper alloy has superior bactericidal and color fastness properties.

US Pat. No. 9,120,678

SYNTHETIC AMORPHOUS SILICA POWDER AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A method for producing a synthetic amorphous silica powder, comprising, in the recited order:
a granulating step for producing a siliceous gel, drying the siliceous gel to turn it into a dry powder, pulverizing particles
of the dry powder, and then classifying the pulverizedly obtained particles to thereby obtain a silica powder;

a spheroidizing step based on a thermal plasma for delivering, at a supplying rate of 3.5 to 17.5 kg/hr, particles of the
silica powder obtained in the granulating step into an argon-oxygen plasma in a plasma torch from a starting material supplying
tube in a manner to heat the particles at a temperature from 2,000° C. to a boiling point of silicon dioxide, thereby melting
the particles, in which the argon-oxygen plasma is generated by introducing argon as a working gas from a gas introducing
tube at a flow rate of 60 to 100 L/min into the plasma torch, while applying a high frequency wave at a frequency of 2 to
3 MHz and at a power of 120 to 1000 kw to the plasma torch, and by gradually introducing oxygen at a flow rate of 30 to 125
L/min into the plasma torch after the plasma is stabilized;

a cleaning step for removing particles of silica powder attached to surfaces of the spheroidized silica powder particles after
the spheroidizing step by repetitively conducting ultrasonic cleaning such that the spheroidized silica powder particles after
the spheroidizing step and ultrapure water are put into a cleaning vessel, and filtration by using a filter until the particles
of the silica powder are fully filtered out; and

a drying step for drying the silica powder particles after the cleaning step such that the powder is firstly put into a container
for drying, and then the container for drying is brought into a drier, in which drying is conducted by flowing nitrogen or
argon at a flow rate of 1 to 20 L/min through within the drier, and by holding the powder at a temperature of 100° C. to 400°
C. for 3 to 48 hours;

wherein the spheroidizing step is conducted by adjusting a value of A/B (W·hr/kg) to 1.0×104 or more, where A is the high-frequency power (W), and B is the supplying rate (kg/hr) of the silica powder, under a condition
that the high-frequency power A is 90 kW or higher, thereby obtaining a synthetic amorphous silica powder having:

an average particle diameter D50 of 10 to 2,000 ?m;

a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface
area calculated from the average particle diameter D50;

a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.75 to 1.00; and an unmolten
ratio of 0.00 to 0.25.

US Pat. No. 9,095,062

POWER MODULE SUBSTRATE, POWER MODULE, AND METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
a ceramics substrate composed of Al2O3, having a top face;

a metal plate composed of aluminum having a purity of 99.99% or more and joined to the top face of the ceramics substrate
with a brazing filler metal including silicon interposed therebetween; and

a high concentration section formed at a joint interface at which the metal plate is joined to the ceramics substrate, having
a silicon concentration that is more than five times the silicon concentration in the metal plate,

wherein a mass ratio of Al, Si, and O is Al:Si:O=40 to 80 wt %:2 to 10 wt %:50 wt % or less when the joint interface including
the high concentration section is analyzed by an energy dispersive X-ray spectroscopy.

US Pat. No. 9,446,984

METHOD AND FACILITY FOR RECOVERING CO2 GAS IN CEMENT MANUFACTURING FACILITY

MITSUBISHI MATERIALS CORP...

1. A method for recovering CO2 gas generated in a cement manufacturing plant, which comprises a first preheater, a superheating furnace, a mixer/calciner,
a cement kiln, and a clinker cooler
the method comprising:
pre-heating a precalcination cement material in the first pre-heater;
supplying the precalcination cement material, which comprises limestone, SiO2, Al2O3 and Fe2O3, to the mixer/calciner;

heating cement material, calcined by the mixer/calciner, at or above a calcination temperature in a superheating furnace by
combustion in a burner with combustion air, wherein the combustion air is supplied from the clinker cooler and the combustion
air enhances combustion in the superheating furnace;

introducing the cement material to the mixer/calciner, wherein a temperature in the inside of the mixer/calciner is maintained
at or above the calcination temperature to calcine the precalcination cement material to yield calcined cement material and
that also generates CO2 gas that is recovered,

supplying a part of the calcined cement material to the superheating furnace, and
supplying a remaining part of the calcined cement material to the cement kiln.

US Pat. No. 9,440,293

SURFACE COATING CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool comprising:
a cutting tool body made of tungsten carbide-based cemented carbide; and
a hard coating layer that has an average thickness of 2 ?m to 10 ?m and is vapor-deposited on a surface of the cutting tool
body, wherein

the hard coating layer is made of a complex nitride layer of Al and Cr, a Cr content with respect to a total amount of Al
and Cr being 0.2 to 0.5 in atomic ratio;

a part of the hard coating layer, which is vapor deposited on a region of a flank face from a cutting edge on a flank face
of the cutting tool body of the surface-coated cutting tool to a location 100 ?m from the cutting edge on the flank face toward
an opposite side thereof, has a granular crystal structure: an average grain size of granular crystals on a surface of the
part of the hard coating layer formed on the region is 0.2 ?m to 0.5 ?m; an average grain size of granular crystals at an
interface between the cutting tool body and the part of the hard coating layer on the region is smaller than the grain size
of granular crystals on the surface of the part of the hard coating layer by 0.02 ?m to 0.1 ?m; a crystal grain size length
ratio of crystal grains whose size is 0.15 ?m or less is 20% or less,

a compressive residual stress in the hard coating layer is 2.0 to 2.7 GPa,
a crack occupancy ratio ?/? is 0.3 to 1.0, ? being an angle of the cutting edge of the surface-coated cutting tool in degrees,
and ? being an occupied angle of a continuous crack formed in the hard coating layer in a corner portion of a front-end cutting
edge within the angle defined by ?,

a minimum width of the continuous crack being 30 nm, and
an aspect ratio of crystal grains included in the granular crystal structure is 1 or more and 6 or less.

US Pat. No. 9,506,163

METHOD OF ELECTROPLATING WITH SN-ALLOY AND APPARATUS OF ELECTROPLATING WITH SN-ALLOY

MITSUBISHI MATERIALS CORP...

1. A method of electroplating with Sn-alloy comprising:
dividing an inside of a plating tank into a cathode cell and an anode cell by an anion-exchange membrane;
supplying plating solution including Sn ions to the cathode cell;
supplying acid solution to the anode cell;
electroplating by energizing an object to be plated in the cathode cell and an anode made of Sn in the anode cell; and
monitoring total acid concentration in the cathode cell and the anode cell:
terminating the electroplating when the total acid concentration is increased to a prescribed value,
generating a replenishing solution using the acid solution in the anode cell including Sn ions supplied from the anode made
of Sn; and

replacing the plating solution in the cathode cell by the replenishing solution; and
supplying new acid solution to the anode cell.
US Pat. No. 9,059,405

FERROELECTRIC THIN FILM-FORMING SOL-GEL SOLUTION

MITSUBISHI MATERIALS CORP...

1. A ferroelectric thin film-forming sol-gel solution comprising:
a PZT-based raw material solution;
a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone; and
an organic dopant including a formamide-based solvent,
wherein the PZT-based raw material solution is included at 17 mass % or more in terms of an oxide, a molar ratio of the polyvinylpyrrolidone
to the PZT-based raw material solution is PZT-based raw material solution:polyvinylpyrrolidone =1:0.1 to 0.5 in terms of a
monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution.

US Pat. No. 9,448,123

TEMPERATURE SENSOR

MITSUBISHI MATERIALS CORP...

1. A temperature sensor comprising:
a pair of lead frames;
a sensor portion connected to the pair of lead frames; and
an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames,
wherein the sensor portion comprises:
an insulating film having a strip shape;
a thin film thermistor portion pattern-formed with a thermistor material at the center portion of the surface of the insulating
film;

a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the
bottom of the thin film thermistor portion with facing each other; and

a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected
to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film, and

wherein the thin film thermistor portion is disposed on the distal end of the insulating film in a state of being bent into
a substantially U-shape, and both ends of the insulating film are fixed to the pair of lead frames.

US Pat. No. 9,355,986

SOLDER JOINT STRUCTURE, POWER MODULE, POWER MODULE SUBSTRATE WITH HEAT SINK AND METHOD OF MANUFACTURING THE SAME, AND PASTE FOR FORMING SOLDER BASE LAYER

MITSUBISHI MATERIALS CORP...

1. A solder joint structure on an aluminum member made of aluminum or aluminum alloy having a joint member including a solder
material,
the solder joint structure comprising:
a glass layer formed on a surface of the aluminum member;
a silver (Ag) layer laminated on the glass layer; and
a solder layer laminated on the Ag layer,
wherein crystalline oxide particles are dispersed in the Ag layer.

US Pat. No. 9,415,446

SURFACE COATED CUTTING TOOL

Mitsubishi Materials Corp...

1. A surface coated cutting tool comprising:
a cutting tool body made of any one of cemented carbide including tungsten carbide, cermet including titanium carbonitride,
and ultra-high pressure sintered material including cubic boron nitride; and

a hard coating layer provided on a surface of the cutting tool body, wherein
the hard coating layer comprises at least a Ti and Al complex carbonitride layer formed by a chemical vapor deposition method,
the complex carbonitride layer includes an alternate laminated structure made of a region A layer and a region B layer, each
of which is represented by a composition formula (Ti1-xAlx)(CyN1-y), the alternate laminated structure having an average total layer thickness of 1-10 ?m,

in the region A layer, a content ratio x, which is an Al content relative to a total content amount of Ti and Al, satisfies
0.70?x?0.80; a content ratio y, which is a C content relative to a total content amount of C and N, satisfies 0.0005?y?0.005,
each of x and y being atomic ratio; an average grain width W, which is an average value of grain width in a plane parallel
to the surface of the cutting tool body, is 0.1 ?m or less; and an average grain length L, which is an average value of grain
length in a direction perpendicular to the surface of the cutting tool body, is 0.1 ?m or less,

in the region B layer, a content ratio x, which is an Al content relative to a total content amount of Ti and Al, satisfies
0.85?x?0.95; a content ratio y, which is a C content relative to a total content amount of C and N, satisfies 0.0005?y?0.005,
each of x and y being atomic ratio; an average grain width W, which is an average value of grain width in a plane parallel
to the surface of the cutting tool body, is 0.1 ?m to 2.0 ?m; and an average grain length L, which is an average value of
grain length in a direction perpendicular to the surface of the cutting tool body, is 0.5 ?m to 5.0 ?m,

the alternate laminated structure includes at least a pair of the region A layer and the region B layer which are alternately
arranged, and

a top layer of the alternate laminated structure is the region A layer.

US Pat. No. 9,089,981

SURFACE-COATED CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool comprising:
a cutting tool body made of tungsten carbide-based cemented carbide; and
a hard coating layer including an Al and Cr composite nitride layer, which is formed on the cutting tool body to coat the
cutting tool body and has a layer thickness of 0.5 ?m to 10 ?m,

wherein pores and droplets are dispersed and distributed in the Al and Cr composite nitride layer,
a percentage of an area occupied by the pores in a cross-sectional area of the Al and Cr composite nitride layer is 0.5 to
1% of the area of the layer and a percentage of an area occupied by the droplets in the cross-sectional area is 2 to 4% of
the area of the layer and,

out of the droplets, Al-rich droplets having an Al content higher than an average Al content contained in the Al and Cr composite
nitride layer occupy 20% or more of a total droplet area in the cross-sectional area.

US Pat. No. 9,388,507

METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT, AND POLYCRYSTALLINE SILICON INGOT

MITSUBISHI MATERIALS CORP...

1. A method for manufacturing a polycrystalline silicon ingot, comprising the steps of:
providing a crucible which is made of silica;
forming a silicon nitride coating layer on an inner surface of a side wall of the crucible;
forming a multilayered silica coating layer on an inside bottom of the crucible by depositing a slurry layer and a stucco
layer on top of each other; and

unidirectionally solidifying a molten silicon in the crucible upwardly from the bottom of the crucible, wherein
the slurry layer is formed by coating a slurry obtained by mixing a filler having a particle size of 10 ?m or more and 50
?m or less with an aqueous dispersion of colloidal silica,

the stucco layer is formed by scattering grain silica with a particle size of 0.3 mm or more and 3 mm or less,
the multilayered silica coating layer is exposed at the inside bottom of the crucible,
a degree of solidification is divided in the crucible into a first zone from 0 mm to X in height, a second zone from X to
Y in height and a third zone of Y or higher, based on the bottom of the crucible,

the height X falls in the range of 10 mm?X<30 mm and the height Y falls in the range of 30 mm?Y<100 mm, and
a solidification rate V1 in the first zone is set in the range of 10 mm/h?V1?20 mm/h and a solidification rate V2 in the second
zone is set in the range of 1 mm/h?V2?5 mm/h.

US Pat. No. 9,293,325

THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR

JAPAN SCIENCE AND TECHNOL...

1. A method of producing a thin film transistor comprising the following steps between a gate electrode layer formation step
and a channel formation step of forming a channel oxide (possibly containing inevitable impurities):
an exposure step of exposing one surface of a first precursor layer, which is obtained from a first precursor solution as
a start material including both a precursor containing lanthanum (La) and a precursor containing tantalum (Ta) as solutes,
is exposed to hydrochloric acid or a vapor thereof and;

a first oxide layer formation step of forming an oxide layer (possibly containing inevitable impurities) consisting of the
lanthanum (La) and the tantalum (Ta) by heating the precursor layer in the atmosphere containing oxygen.

US Pat. No. 9,452,478

SURFACE-COATED CUTTING TOOL HAVING THEREIN HARD COATING LAYER CAPABLE OF EXHIBITING EXCELLENT CHIPPING RESISTANCE DURING HIGH-SPEED INTERMITTENT CUTTING WORK

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool comprising:
a cutting tool body made of any one of cemented carbide including tungsten carbide, cermet including titanium carbonitride,
and ultra-high pressure sintered material including cubic boron nitride; and

a hard coating layer coated on a surface of the cutting tool body, wherein
(a) the hard coating layer comprises at least a complex carbonitride layer of Ti and Al with a cubic crystal structure, the
complex carbonitride layer being vapor-deposited by a chemical vapor deposition method and having an average thickness of
1-20 ?m,

(b) an Al content ratio X and a C content ratio Y satisfy 0.60?X?0.90 and 0.0005%?Y?0.005, respectively, in the complex carbonitride
layer: an average composition of the complex carbonitride layer being expressed by a composition formula, (Ti1-XAlX)(CYN1-Y); and X and Y being in atomic ratio,

(c) an Al content ratio XL is 0.55?XL?0.70: a location L being a location 0.3 ?m from an interface of the complex carbonitride layer on a side of the cutting tool
body to an internal part of the complex carbonitride layer; compositional analysis being performed on a cross-section, which
includes the location L and is perpendicular to the surface of the cutting tool body, centering around the location L to obtain
an Al content ratio of the complex carbonitride layer of Ti and Al with a cubic crystal structure; and the Al content ratio
XL being calculated as an average value of the obtained Al content ratio by the compositional analysis in atomic ratio;

an Al content ratio XH is 0.8?XH?0.95: a location H being a location 0.3 ?m from an interface of the complex carbonitride layer on an outer surface side of
the complex carbonitride layer to the internal part of the complex carbonitride layer; compositional analysis being performed
on a cross-section, which includes the location H and is perpendicular to the surface of the cutting tool body, centering
around the location H to obtain an Al content ratio of the complex carbonitride layer of Ti and Al with a cubic crystal structure;
and the Al content ratio XH being calculated as an average value of the obtained Al content ratio by the compositional analysis in atomic ratio; and

the complex carbonitride layer has a compositionally gradient structure in which the Al content ratio in the complex carbonitride
layer gradually increases from the interface of the complex carbonitride layer on the side of the cutting tool body to the
outer surface side of the complex carbonitride layer, and

(d) an average grain size DL, which is an average value of crystal grain width of the complex carbonitride in a cross-section including the location L
and being parallel to the surface of the cutting tool body, is 0.1 ?m or less;

an average grain size DH, which is an average value of crystal grain width of the complex carbonitride in a cross-section including the location H
and being parallel to the surface of the cutting tool body, is 0.5 ?m to 2 ?m; and

an average grain size of the complex carbonitride layer of Ti and Al with the cubic crystal structure forms a grain size distribution
gradually increasing from the interface of the complex carbonitride layer on the side of the cutting tool body to the outer
surface side of the complex nitride layer.

US Pat. No. 9,455,061

CARBON NANOFIBER DISPERSION LIQUID, COATING COMPOSITION, AND PASTE COMPOSITION

MITSUBISHI MATERIALS CORP...

1. A carbon nanofiber dispersion liquid comprising:
a solvent;
carbon nanofibers synthesized by catalytic chemical vapor deposition methods using a catalyst;
an alkanolamine; and
a chelating agent;
wherein the alkanolamine is at least one selected from a group consisting of monoisopropanolamine, diisopropanolamine, and
triisopropanolamine, and

the chelating agent coordinates to the catalyst of the carbon nanofibers.

US Pat. No. 9,228,091

FERRITE THIN FILM-FORMING COMPOSITION MATERIAL, METHOD OF FORMING FERRITE THIN FILM, AND FERRITE THIN FILM FORMED USING THE SAME

MITSUBISHI MATERIALS CORP...

1. A ferrite thin film-forming composition material for forming a ferrite thin film having a composition represented by (Ni1-xZnxO)t(Fe2O3)s, (Cu1-xZnxO)t(Fe2O3)s or (Ni0.80-yCu0.20ZnyO)t(Fe2O3)s by using a sol-gel method,
wherein the composition material is formed by dissolving metallic raw materials in a solvent including a.) acetonitrile and
b.) a lower alcohol or a diol, and a blending fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass
% of the composition material and a blending fraction of the lower alcohol or diol is 15 mass % to 60 mass % with respect
to 100 mass % of the composition material;

wherein, x satisfies 0

US Pat. No. 9,446,959

SYNTHETIC AMORPHOUS SILICA POWDER AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A method for producing a synthetic amorphous silica powder, comprising, in the recited order: a granulating step for producing
a siliceous gel, drying the siliceous gel into a dry powder, pulverizing particles of the dry powder, and then classifying
the pulverized particles to obtain a silica powder; a spheroidizing step based on a thermal plasma for delivering, at a predetermined
supplying rate, particles of the silica powder into a plasma torch in which argon is introduced therein with a predetermined
flow rate and a plasma is generated by a predetermined high-frequency power, in a manner to heat the particles at a temperature
from 2,000° C. to the boiling point of silicon dioxide, thereby melting the particles; a cleaning step for removing fine particles
attached onto surfaces of the silica powder particles; and a drying step for drying the silica powder particles; wherein the
spheroidizing step comprises adjusting the flow rate of the argon to 50 L/min or more and a value of A/B (Whr/kg) to 3.0×103 to less than 1.0×104, where A is the high-frequency power (W), and B is the supplying rate (kg/hr) of the silica powder particles, thereby obtaining
a synthetic amorphous silica powder having: an average particle diameter D50 of 10 to 2,000 ?m; a quotient of greater than 1.35 and not more than 1.75 obtained by dividing a BET specific surface area
of the powder by a theoretical specific surface area calculated from the average particle diameter D50; a real density of 2.10 to 2.20 g/cm3; an intra-particulate porosity of 0 to 0.05; a circularity of 0.50 to 0.75; and an unmolten ratio of greater than 0.25 and
not more than 0.60.

US Pat. No. 9,496,064

COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL

MITSUBISHI MATERIALS CORP...

1. A copper alloy for electric and electronic devices, the copper alloy comprising:
23 mass % to 36.5 mass % of Zn;
0.1 mass % to 0.9 mass % of Sn;
0.2 mass % to less than 1.0 mass % of Ni;
0.001 mass % to less than 0.10 mass % of Fe;
0.005 mass % to 0.1 mass % of P; and
a balance including Cu and unavoidable impurities,
wherein a ratio Fe/Ni of a Fe content to a Ni content satisfies 0.002?Fe/Ni<0.7 by atomic ratio,
a ratio (Ni+Fe)/P of a total content (Ni+Fe) of Ni and Fe to a P content satisfies 3<(Ni+Fe)/P<15 by atomic ratio,
a ratio Sn/(Ni+Fe) of a Sn content to the total content (Ni+Fe) of Ni and Fe satisfies 0.3 and

R{220} is 0.8 or less, wherein an X-ray diffraction intensity from a {111} plane on a surface of the copper alloy is represented
by I{111}, an X-ray diffraction intensity from a {200} plane on the surface of the copper alloy is represented by I{200},
an X-ray diffraction intensity from a {220} plane on the surface of the copper alloy is represented by I{220}, an X-ray diffraction
intensity from a {311} plane on the surface of the copper alloy is represented by I{311}, and a fraction R{220} of the X-ray
diffraction intensity from the {220} plane on the surface of the copper alloy is

R{220}=I{220}/(I{111}+I{200}+I{220}+I{311}).

US Pat. No. 9,440,298

HELICAL BROACH

MITSUBISHI MATERIALS CORP...

1. A helical broach that forms a twisted groove at the inner circumference of a machined hole of a workpiece by a plurality
of cutting edges that protrude from an outer-circumferential part of a broach body formed in a shaft shape to the radial outside
of the broach body and are arranged in a spiral shape which is twisted around the axis of the broach body from the tip-end
side of the broach body to the rear-end side thereof,
wherein the plurality of cutting teeth include a plurality of circumference cutting teeth that are arranged on the tip-end
side of the broach body, and include a plurality of tooth thickness cutting teeth that are arranged on the rear-end side of
the broach body,

the plurality of tooth thickness cutting teeth respectively include cutting edges that are formed at intersecting ridge parts
between rake faces facing the tip-end side of the broach body and lateral surfaces facing one wall surface of both groove
wall surfaces of the twisted groove of the workpiece, and include guiding edges that are formed at intersecting ridge parts
between lateral surfaces on the opposite side to the lateral surfaces provided with the cutting edges and the rake faces,

among the tooth thickness cutting teeth, the tooth thickness cutting tooth positioned closest to the rear-end side of the
broach body is provided with the guiding edge instead of the cutting edge at the intersecting ridge part between the rake
face and the lateral surface facing one wall surface of both groove wall surfaces of the twisted groove of the workpiece,

the tooth thickness cutting tooth positioned closest to the rear-end side of the broach body is formed so as to be retreated
in the tooth thickness direction more than the tooth thickness cutting tooth positioned right ahead thereof in a row to which
the tooth thickness cutting tooth belongs,

on the guiding edge of the tooth thickness cutting tooth positioned closest to the rear-end side of the broach body, a negative
relief angle ?c is formed in the range of 0.5°??c?2°, and

a retreat amount of the tooth thickness cutting tooth positioned closest to the rear-end side of the broach body with respect
to the tooth thickness cutting tooth positioned right ahead thereof in a row to which the tooth thickness cutting tooth belongs,
is set to a range of 0 to 20 ?m.

US Pat. No. 9,133,535

COPPER ALLOY SHEET AND METHOD OF MANUFACTURING COPPER ALLOY SHEET

Mitsubishi Shindoh Co., L...

1. A method of manufacturing the copper alloy sheet, the method comprising, in this order:
subjecting an ingot to a hot-rolling process to obtain a copper alloy material;
subjecting the copper alloy material to a first cold-rolling process;
subjecting the copper alloy material to an annealing process;
subjecting the copper alloy material to a second cold-rolling process;
subjecting the copper alloy material to a recrystallization heat treatment process; and
subjecting the copper alloy material to a finish cold-rolling process,
wherein a hot-rolling start temperature of the hot-rolling process is 760° C. to 850° C.,
a cooling rate of a copper alloy material in a temperature range from 480° C. to 350° C. after final rolling is higher than
or equal to 1° C./sec or the copper alloy material is held in a temperature range from 450° C. to 650° C. for 0.5 hours to
10 hours after final rolling,

a cold-rolling ratio in the second cold-rolling process is higher than or equal to 55%,
when a maximum reaching temperature of the copper alloy material is denoted by Tmax (° C.), a holding time in a temperature
range from a temperature, which is 50° C. lower than the maximum reaching temperature of the copper alloy material, to the
maximum reaching temperature is denoted by tm (min), and a cold-rolling ratio in the cold-rolling process is denoted by RE
(%), the annealing process satisfies 420?Tmax?720, 0.04?tm?600, and 380?{Tmax?40×tm?1/2?50×(1?RE/100)1/2}?580, or the annealing process is a batch type annealing at a temperature of 420° C. to 560° C.,

the recrystallization heat treatment process includes a heating step of heating the copper alloy material to a predetermined
temperature, a holding step of holding the copper alloy material at a predetermined temperature for a predetermined time after
the heating step, and a cooling step of cooling the copper alloy material to a predetermined temperature after the holding
step,

in the recrystallization heat treatment process, when a maximum reaching temperature of the copper alloy material is denoted
by Tmax (° C.), a holding time in a temperature range from a temperature, which is 50° C. lower than the maximum reaching
temperature of the copper alloy material, to the maximum reaching temperature is denoted by tm (min), and a cold-rolling ratio
in the second cold-rolling process is denoted by RE (%), 480?Tmax?690, 0.03?tm?1.5, and 360?{Tmax?40×tm?1/2?50×(1?RE/100)1/2}?520,

an average grain size of the copper alloy material before the finish cold-rolling process is 2.0 ?m to 7.0 ?m,
a sum of an area ratio of a ? phase and an area ratio of a ? phase in a metallographic structure of the copper alloy material
before the finish cold-rolling process is 0% to 0.9%,

the copper alloy sheet contains 28.0 mass % to 35.0 mass % of Zn, 0.15 mass % to 0.75 mass % of Sn, 0.005 mass % to 0.05 mass
% of P, and a balance consisting of Cu and unavoidable impurities, and

a Zn content [Zn] (mass %) and a Sn content [Sn] (mass %) satisfy relationships of 44?[Zn]+20×[Sn]?37 and 32?[Zn]+9×([Sn]?0.25)1/2?37.

US Pat. No. 9,512,507

SILVER-WHITE COPPER ALLOY AND METHOD OF PRODUCING SILVER-WHITE COPPER ALLOY

MITSUBISHI MATERIALS CORP...

1. A silver-white copper alloy having superior color fastness and bactericidal property, the silver-white copper alloy comprising:
51.0 mass % to 57.0 mass % of Cu;
9.0 mass % to 12.5 mass % of Ni;
0.05 mass % to 0.9 mass % of Mn;
0.0003 mass % to 0.010 mass % of C;
0.0005 mass % to 0.030 mass % of Pb; and
the balance of Zn and inevitable impurities,
wherein a relationship of 65.5?[Cu]+1.2×[Ni]+0.4×[Mn]?69.0 is satisfied between a content of Cu [Cu] (mass %), a content of
Ni [Ni] (mass %), and a content of Mn [Mn] (mass %),

a relationship of 0.58?[Zn]/[Cu]<0.7 is satisfied between a content of Zn [Zn] (mass %) and the content of Cu [Cu] (mass %),
and

in a metal structure thereof, an area ratio of ? phases dispersed in an ?-phase matrix is 0% to 0.9%.

US Pat. No. 9,615,442

POWER MODULE SUBSTRATE AND POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power-module substrate, comprising:
first and second sets of circuit-layer metal-plates made of copper or copper alloy bonded in a layered state to top and bottom
surfaces, respectively, of a first ceramic substrate;

a metal member connecting the first and second sets of circuit-layer metal-plates and extending through a hole formed in the
first ceramic substrate;

a second ceramic substrate bonded at a top surface thereof to a bottom surface of the second set of circuit-layer metal-plates
in the layered state;

a heat-radiation-layer metal-plate made of aluminum or aluminum alloy bonded to a bottom surface of the second ceramic substrate;
an electric component attached to a top surface of one of the first set of circuit-layer metal-plates above the metal member
and the through hole;

a lead-terminal part for external connection protruding outward from the first ceramic substrate formed integrally on the
second set of circuit-layer metal-plates; and

a protrusion part of the second ceramic substrate protruding outward from the first ceramic substrate in a surface direction
and supporting at least a part of the lead-terminal part at a top surface thereof,

wherein the power-module substrate is configured to conduct heat from the electric component through the through hole via
the metal member, along the second set of circuit-layer metal-plates, and to the heat-radiation-layer metal-plate.

US Pat. No. 9,505,622

CARBON NANOFIBERS ENCAPSULATING METAL COBALT, AND PRODUCTION METHOD THEREFOR

MITSUBISHI MATERIALS CORP...

1. A carbon nanofiber that is produced by a vapor phase reaction of a carbon oxide-containing raw material gas using a metal
oxide powder containing a Co oxide as a catalyst,
wherein at least one type which is selected from metal cobalt, carbon-containing cobalt metals, and cobalt-carbon compounds
and which has a granular shape and a size to occupy 70% to 90% of the inner diameter of the carbon nanofiber is encapsulated
in the carbon nanofiber in a wrapped state.

US Pat. No. 9,315,895

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON

MITSUBISHI MATERIALS CORP...

1. An apparatus for producing polycrystalline silicon in which raw gas including silicon compounds is introduced into a reactor,
in which electric current is supplied to silicon seed rods in the reactor so as to heat the silicon seed rods, and in which
polycrystalline silicon is deposited on surfaces of the silicon seed rods and grown to rods, the apparatus comprising:
a bell jar having a circumferential wall forming a chamber of the reactor and a jacket covering the circumferential wall,
and in which a cooling path formed between the circumferential wall and the jacket that allows a cooling medium including
water to flow therethrough;

a coolant feeding system which is connected to the bell jar so as to feed the cooling medium to the cooling path;
a coolant recovering system which is connected to the bell jar so as to recover the cooling medium from the cooling path;
a pressure control part controlling a pressure in the cooling path; and
a flow-rate control part controlling a flow rate of the cooling medium
wherein by maintaining the pressure in the cooling path to a prescribed high pressure and introducing the cooling medium into
the cooling path in a state of liquid of nearly saturated temperature, the cooling medium flows as a boiling two-phase flow
having a heat transfer coefficient larger than that of a single-phase flow of water, so that the circumferential wall is cooled
by the boiling two-phase flow of the cooling medium,

wherein the circumferential wall is made of carbon steel having thermal conductivity of 35 W/(m·K) or more,
wherein the coolant feeding system is connected to a plurality of coolant inlets that are provided on a lower part of the
jacket with intervals along a circumferential direction so as to introduce the cooling medium to the cooling path, and connected
to a plurality of upper coolant inlets that are provided on an upper part of the jacket with intervals along the circumferential
direction so as to introduce the cooling medium to the cooling path, and

wherein the coolant recovering system is connected to a coolant outlet that is provided on an upper part of the jacket so
as to discharge the cooling medium from the cooling path.

US Pat. No. 9,251,955

PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF FORMING THE SAME

MITSUBISHI MATERIALS CORP...

1. A PZT-based ferroelectric thin film which is formed by coating a PZT-based ferroelectric thin film-forming composition
on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be
crystallized, the thin film comprising:
PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin
film,

wherein heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based
particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

US Pat. No. 9,735,085

BONDED BODY, POWER MODULE SUBSTRATE, POWER MODULE AND METHOD FOR PRODUCING BONDED BODY

MITSUBISHI MATERIALS CORP...

1. A bonded body in which a ceramic member formed of a ceramic containing Al and a Cu member formed of Cu or a Cu alloy are
bonded to each other, wherein a bonding portion is formed between the ceramic member and the Cu member, an active metal compound
region formed of a compound containing active metal is formed on the bonded portion on the ceramic member side, and an Al
concentration of the bonding portion having a thickness range of 0.5 .mu.m to 3 .mu.m from one surface of the active metal
compound region on the Cu member side towards the Cu member side is in a range of 0.5 at % to 15 at %, wherein the one surface
of the active metal compound region is a surface having ruggedness and the thickness range is a range from a point of the
ruggedness nearest to the Cu member.

US Pat. No. 9,642,275

POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module comprising:
a power module substrate that has a circuit layer arranged on one surface of an insulating layer; and
a semiconductor device that is bonded to one surface of the circuit layer,
wherein a copper layer composed of copper or a copper alloy is formed on the surface of the circuit layer to which the semiconductor
device is bonded,

a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device,
an average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 ?m from the
surface of the circuit layer in the solder layer is within a range of 0.1 to 10 ?m,

the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass
of Cu, and

a thermal resistance increase rate when a power cycle is loaded 100,000 times under conditions of a conduction duration of
5 seconds and a temperature difference of 80° C. is less than 10% in a power cycle test.

US Pat. No. 9,142,884

ANTENNA DEVICE

MITSUBISHI MATERIALS CORP...

1. An antenna device comprising:
an insulating substrate main body;
a ground plane which is patterned with metal foil on the substrate main body;
an antenna-occupied area that is provided in contact with one side of the substrate main body on the substrate main body as
an area in which the ground plane is not formed;

a slit section that is bored in the ground plane so as to extend from the antenna-occupied area in the direction opposite
to the one side of the substrate main body;

a power feeding pattern that is patterned with metal foil so as to extend into the slit section, provided with a power feeding
point at the base end side, and connected with a first passive element halfway while the tip end side extends into the antenna-occupied
area toward the one side of the substrate main body;

an antenna element of a dielectric antenna that is constituted by a dielectric base body, a conductor pattern formed on the
surface of the dielectric base body, and a pair of electrodes which are connected to each other by the conductor pattern and
are formed at both ends of the dielectric base body and is placed along the one side of the substrate main body while one
end of the electrodes is connected to the tip end of the power feeding pattern and;

a second passive element that is connected between the other end of the electrodes of the antenna element and the ground plane
adjoining thereto; and

a ground connection pattern having an inductance that is patterned with metal foil, connects the tip end of the power feeding
pattern with the ground plane opposite to the antenna element,

wherein the slit section separates the ground plane, and the ground plane is separated to a section connected to the second
passive element and a section connected the ground connection pattern, which are respectively disposed on both sides of the
power feeding pattern.

US Pat. No. 9,312,404

COMPOSITION FOR MANUFACTURING ELECTRODE OF SOLAR CELL, METHOD OF MANUFACTURING SAME ELECTRODE, AND SOLAR CELL USING ELECTRODE OBTAINED BY SAME METHOD

MITSUBISHI MATERIALS CORP...

1. A method of manufacturing an electrode, comprising the step of:
forming an electrode by coating a composition for manufacturing an electrode on a base material using a wet-coating method,
wherein

the composition comprises metal nanoparticles dispersed in a dispersive medium,
a content of the metal nanoparticles is 2.5 to 95.0 weight %,
75 weight % or more of the metal nanoparticles is constituted of nanoparticles consisting of silver,
the metal nanoparticles being chemically modified by a protective agent having an organic molecular main chain comprising
a carbon backbone of carbon number of 1 to 3, and

the number of the metal nanoparticles having a primary grain size of 10 to 50 nm is 70% or more of the total number of the
metal nanoparticles contained in the composition.

US Pat. No. 9,216,460

COOLANT-HOLE EQUIPPED DRILL

MITSUBISHI MATERIALS CORP...

1. A coolant-hole equipped drill comprising:
a drill main body which is configured to rotate around an axis line during operation;
a cutting edge portion which has a tip flank formed at a tip side of the drill main body;
a plurality of chip discharging grooves, each of which is formed at an outer circumference of the cutting edge portion and
provided with a front groove wall surface facing forward in the rotating direction of the drill main body;

a cutting edge which is formed at a ridge line portion where the front groove wall surface of the chip discharging groove
and the tip flank of the cutting edge portion intersect with each other and in which an inner circumferential portion of the
front groove wall surface is subjected to thinning;

a thinning blade formed by the thinning at an inner circumferential portion of the cutting edge;
a first thinning surface formed by the thinning at an inner circumferential portion of a tip side part of the front groove
wall surface and formed forward of the thinning blade in the rotating direction;

a second thinning surface which is provided behind the tip flank in the rotating direction and inclined to the tip flank by
the thinning so as to move backward to the base end of the drill main body, and which is formed forward of the first thinning
surface in the rotating direction;

a coolant hole which is provided at the cutting edge portion so as to be opened at the tip flank and is constant in shape
and dimension on a cross section orthogonal to the axis line over an entire length of the drill main body; and

a land portion which is provided between the chip discharging grooves adjacent to each other in the rotating direction, wherein
a first margin portion, a second margin portion and a third margin portion are formed on an outer-circumference wall surface
of the land portion, so as to have intervals between each other in the rotating direction,

the first margin portion is provided behind the cutting edge in the rotating direction,
the second margin portion is provided behind the first margin portion in the rotating direction and intersects with the tip
flank between two straight lines which pass through the axis line and circumscribe an opening portion of the coolant hole
so as to hold the opening portion between two straight lines when viewed from the axis line of the drill main body, and

the third margin portion is provided behind the second margin portion in the rotating direction and at least a part backward
in the rotating direction intersects with the tip flank, a tip of the third margin portion intersects with the second thinning
surface, a part of the third margin portion forward in the drill rotating direction intersects with the second flank portion,
and a part of the third margin portion backward in the drill rotating direction intersects with the second thinning surface,
and

wherein the coolant hole includes:
a front hole wall surface which is positioned forward in the rotating direction of the drill main body;
a rear hole wall surface which is positioned backward in the rotating direction of the drill main body; and
an outer-circumference hole wall surface which is positioned on the outer circumferential side of the drill main body, and
wherein intervals between the front hole wall surface of the coolant hole and the rear hole wall surface thereof in the circumferential
direction are gradually increased toward the outer circumferential side, a percentage for increasing the intervals between
the front hole wall surface and the rear hole wall surface is gradually increased toward the outer circumferential side, and
the front hole wall surface and the rear hole wall surface are formed in such a manner that both the cross sections are formed
in a curved shape which is convex inside the coolant hole on the cross section orthogonal to the axis line, and

wherein parts at which the front hole wall surface, the rear hole wall surface and the outer-circumference hole wall surface
intersect each other are smoothly connected by recessed curve portions.

US Pat. No. 9,297,586

METHOD OF GENERATING CRACKS IN POLYCRYSTALLINE SILICON ROD AND CRACK GENERATING APPARATUS

MITSUBISHI MATERIALS CORP...

1. An apparatus of generating cracks in a polycrystalline silicon rod by heating the polycrystalline silicon rod and subsequently
quenching the polycrystalline silicon rod, comprising:
a heating unit to heat a polycrystalline silicon rod; and
a local portion cooling unit by which a refrigerant fluid is applied onto at least one spot-like area of a surface of the
polycrystalline silicon rod,

wherein each of the spot-like area has a diameter of not smaller than 0.20 D and not larger than 0.32 D, where D denotes a
diameter of the polycrystalline silicon rod.

US Pat. No. 9,182,286

INFRARED SENSOR AND A CIRCUIT BOARD EQUIPPED THEREWITH

MITSUBISHI MATERIALS CORP...

1. An infrared sensor comprising:
an electrical insulating film sheet;
first and second temperature sensor devices which are provided on one side of the electrical insulating film sheet, and are
located at a distance from each other;

first foil conductor patterns which are formed on the one side of the electrical insulating film sheet, and are connected
to the first temperature sensor device;

second foil conductor patterns which are formed on the one side of the electrical insulating film sheet, and are connected
to the second temperature sensor device; and

an infrared reflector film which is provided on another side of the electrical insulating film sheet, and is opposite only
the second temperature sensor device across the electrical insulating film sheet, wherein

a portion of the first foil conductor patterns is arranged around the first temperature sensor device and has a width greater
than the rest of the first conductor patterns so that the first foil conductor patterns occupy a larger surface area than
a surface area occupied by the second foil conductor patterns.

US Pat. No. 9,093,198

METHOD OF PRODUCING FERROELECTRIC THIN FILM-FORMING COMPOSITION AND APPLICATION OF THE SAME

MITSUBISHI MATERIALS CORP...

1. A method of producing a PZT thin film-forming composition, the method comprising:
a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to
38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react
with each other to obtain a PZT thin film-forming composition precursor; and

a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days.

US Pat. No. 9,272,918

SYNTHETIC AMORPHOUS SILICA POWDER AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A method for producing a synthetic amorphous silica powder, comprising, in the recited order:
a granulating step for producing a siliceous gel, drying the siliceous gel to turn it into a dry powder, pulverizing particles
of the dry powder, and then classifying the pulverizedly obtained particles to thereby obtain a silica powder;

a spheroidizing step based on a thermal plasma for delivering, at a supplying rate of 4.2 to 8.0 kg/hr, particles of the silica
powder obtained in the granulating step into an argon-oxygen plasma in a plasma torch from a starting material supplying tube,
in a manner to heat the particles at a temperature from 2,000° C. to a boiling point of silicon dioxide, thereby melting the
particles, in which the argon-oxygen plasma is generated by introducing argon as a working gas from a gas introducing tube
at a flow rate of 15 to 60 L/min into the plasma torch, while applying a high frequency wave at a frequency of 4 to 5 MHz
and at a power of 30 to 80 kw to the plasma torch, and by gradually introducing oxygen at a flow rate of 10 to 80 L/min into
the plasma torch after the plasma is stabilized;

a cleaning step for removing fine particles attached to surfaces of the silica powder particles after the spheroidizing step
by repetitively conducting ultrasonic cleaning such that the spheroidized silica powder particles after the spheroidizing
step and ultrapure water are put into a cleaning vessel, and filtration by using a filter until fine particles of the silica
powder are fully filtered out; and

a drying step for drying the silica powder particles after the cleaning step such that the powder is firstly put into a container
for drying, and then the container for drying is brought into a drier, in which drying is conducted by flowing nitrogen or
argon at a flow rate of 1 to 20 L/min through within the drier, and by holding the powder at a temperature of 100° C. to 400°
C. for 12 to 48 hours;

wherein the spheroidizing step is conducted by adjusting a value of A/B (W·hr/kg) to 1.0×104 to 1.4×104, where A is the high-frequency power (W), and B is the supplying rate (kg/hr) of the silica powder, thereby obtaining a synthetic
amorphous silica powder having:

an average particle diameter D50 of 10 to 3,000 ?m;

a quotient of 1.00 to 1.35 obtained by dividing a BET specific surface area of the powder by a theoretical specific surface
area calculated from the average particle diameter D50;

a real density of 2.10 to 2.20 g/cm3;

an intra-particulate porosity of 0 to 0.05;
a circularity of 0.75 to 1.00; and
a spheroidization ratio of 0.55 to 1.00.

US Pat. No. 9,190,721

ANTENNA DEVICE

MITSUBISHI MATERIALS CORP...

1. An antenna device comprising:
an insulating substrate main body; and
a ground pattern, a first element, a second element, and a third element each of which is patterned with metal foil on the
substrate main body,

wherein the ground pattern has a linear, uni-directional shape and extends in one direction while being connectable to a ground
at the base end side,

the first element extends such that a feed point is provided at the base end which is arranged near the base end side of the
ground pattern, a first passive element is connected at an intermediate portion which is arranged along the ground pattern,
and a first antenna element of a dielectric antenna is provided closer to the tip end side than the first passive element,

the second element extends such that the base end thereof is connected to the base end side of the ground pattern and the
tip end thereof is connected to the intermediate portion provided closer to the base end side than the first passive element
of the first element,

the third element extends such that the base end thereof is connected closer to the base end side than the first passive element
of the first element and a second passive element is connected at an intermediate point,

the first element extends with a gap provided between the first element and each of the second element, the third element,
and the ground pattern so as to be able to generate a stray capacitance between the first element and the second element,
a stray capacitance between the first element and the third element, and a stray capacitance between the first element and
the ground pattern, and

the ground pattern extends such that the tip end thereof is provided within a range from a position facing the connecting
part between the first element and the second element to a position facing the first passive element.

US Pat. No. 9,090,962

SILICON SEED ROD ASSEMBLY OF POLYCRYSTALLINE SILICON, METHOD OF FORMING THE SAME, POLYCRYSTALLINE SILICON PRODUCING APPARATUS, AND METHOD OF PRODUCING POLYCRYSTALLINE SILICON

MITSUBISHI MATERIALS CORP...

1. A method of forming a silicon seed rod assembly which is used for producing polycrystalline silicon by a vapor deposition
method and includes two rod-shape silicon seed rods and a silicon connection member bridging the silicon seed rods, comprising
the steps of:
forming a support surface at a step portion between an upper end portion and a main body portion of each silicon seed rod
so as to be disposed in a direction perpendicular to a longitudinal direction of the upper end portion;

forming a pair of through-holes by perforating the silicon connection member from one side surface thereof by a drill in a
direction perpendicular to the one side surface;

setting the two silicon seed rods positioned to be in an inclined state on a pair of electrodes provided in a reaction furnace,
wherein a horizontal distance between the two silicon seed rods gradually increases in a direction from a base end portion
to the upper end portion of the silicon seed rods; and

inserting each upper end portion of each silicon seed rod into each through-hole of the silicon connection member so as to
make the upper end portions of the two silicon seed rods to be close to each other and so as to form a curvature in the two
silicon seed rods, wherein the one side surface comes into contact with the support surface of the silicon seed rod;

wherein a distance L1 between the upper end portions of the two silicon seed rods before insertion into the connection member is larger than a
distance L2 between the pair of through-holes formed in the connection member;

whereby causing a stretching force of the silicon seed rods acting on the silicon connection member in a longitudinal direction
of the silicon connection member.

US Pat. No. 9,281,421

CONDUCTIVE REFLECTIVE FILM AND METHOD OF MANUFACTURING THE SAME

MITSUBISHI MATERIALS CORP...

1. A conductive reflective film provided on a transparent conductive film, said conductive reflective film comprising:
a silver nanoparticle-sintered film; and
a surface coating composition containing a hydrolysate of a metal alkoxide that has been wet coated on the silver nanoparticle-sintered
film, wherein

the coated silver nanoparticle-sintered film has been fired.

US Pat. No. 9,807,865

SUBSTRATE FOR POWER MODULES, SUBSTRATE WITH HEAT SINK FOR POWER MODULES, AND POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
an insulating substrate;
a circuit layer which is formed on one surface of the insulating substrate; and
a metal layer which is formed on the other surface of the insulating substrate,
wherein the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded on one surface
of the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded on a surface of the
first aluminum layer located on the side opposite to the insulating substrate by solid-phase diffusion,

the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and
a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1

US Pat. No. 9,108,861

TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION AND METHOD FOR MANUFACTURING SAID POWDER

MITSUBISHI MATERIALS CORP...

1. Tin(II) oxide powder containing an antioxidant for replenishing a tin component of a tin-alloy plating solution,
which is obtained by mixing a dried tin(II) oxide powder with the antioxidant and comprises 100 to 5000 ppm of the antioxidant
contained in the tin(II) oxide powder and, has an average particle diameter D50 of 5 to 15 ?m, a specific surface area of 0.4 to 3.5 m2/g, and a tap density of 0.6 to 1.2 g/cm3, and

has such a dissolution rate that when 0.1 g of the tin(II) oxide powder is added to 100 ml of 100 g/L aqueous alkylsulfonic
acid solution at a temperature of 25° C. and stirred, the powder completely dissolves therein within 180 seconds.

US Pat. No. 9,321,105

CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, POWDER FOR CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, METHOD OF MANUFACTURING CLAY-LIKE COMPOSITION FOR FORMING SINTERED COPPER BODY, SINTERED COPPER BODY, AND M

MITSUBISHI MATERIALS CORP...

1. A composition for forming a sintered copper body comprising:
a powder constituent containing a copper-containing metal powder which contains copper and a copper-containing oxide powder
which contains copper;

a binder; and
water,
wherein an amount of oxygen contained in the powder constituent is in a range of from 4 mass % to 8 mass %,
an amount of Fe in the powder constituent is 1000 ppm or less,
wherein an average particle diameter of the copper-containing oxide powder is from 3 ?m to 10 ?m, and
wherein an average particle diameter of the copper-containing metal powder is from 3 ?m to 10 ?m.
US Pat. No. 9,412,485

LANIO3 THIN FILM-FORMING COMPOSITION AND METHOD OF FORMING LANIO3 THIN FILM USING THE SAME

MITSUBISHI MATERIALS CORP...

1. A LaNiO3 thin film-forming composition for forming a LaNiO3 thin film, the composition comprising:
LaNiO3 precursors;

one or more first organic solvents selected from the group consisting of carboxylic acids, alcohols, esters, ketones, ethers,
cycloalkanes, aromatic compounds, and tetrahydrofuran;

one or more stabilizers selected from the group consisting of ?-diketones, ?-ketones, ?-keto esters, oxyacids, diols, triols,
carboxylic acids, alkanolamines, and polyvalent amines; and

a second organic solvent having a boiling point of 150° C. to 300° C. and a surface tension of 20 dyn/cm to 50 dyn/cm,
wherein a ratio of the LaNiO3 precursors is 1 mass % to 20 mass % in terms of oxides with respect to 100 mass % of the composition,

a ratio of the stabilizer is greater than 0 mol and less than or equal to 10 mol with respect to 1 mol of a total amount of
the LaNiO3 precursors in the composition, and

a ratio of the second organic solvent is 5 mass % to 20 mass % with respect to 100 mass % of the composition.

US Pat. No. 9,364,898

CUTTING INSERT

MITSUBISHI MATERIALS CORP...

1. A cutting insert comprising:
an insert main body having a top and a bottom surrounded by sides, each side being a flank face of the insert, and a rake
face on the top of each of the sides; and

a cutting edge which is formed between the rake face and the flank face in the insert main body and provided with a corner
section which forms a convex arc shape when seen in a planar view from a direction facing the rake face and a linear section
which is in contact with the corner section at least at one end of the corner section and extends linearly, wherein

the cutting edge is provided with a first region along the corner section when seen in the planar view, a second region along
the linear section and a third region positioned between the first region and the second region, and

a rake angle of the cutting edge in the third region is greater than rake angles of the cutting edges in the first region
and the second region.

US Pat. No. 9,194,025

METHOD OF MANUFACTURING SINTERED SILVER ALLOY BODY AND COPPER OXIDE-CONTAINING CLAY-LIKE COMPOSITION

MITSUBISHI MATERIALS CORP...

1. A copper oxide-containing clay-like composition comprising: copper oxide powder; a binder; and water,
wherein a mixing ratio (mass ratio) B/A between the copper oxide powder (A) and the binder and water (B) is in a range of
2/10?B/A?3/10.

US Pat. No. 9,093,192

SILVER-COATED SPHERICAL RESIN, METHOD FOR PRODUCING SAME, ANISOTROPICALLY CONDUCTIVE ADHESIVE CONTAINING SILVER-COATED SPHERICAL RESIN, ANISOTROPICALLY CONDUCTIVE FILM CONTAINING SILVER-COATED SPHERICAL RESIN, AND CONDUCTIVE SPACE

MITSUBISHI MATERIALS CORP...

1. A silver-coated spherical resin comprising:
a spherical resin consisting of an acryl-based resin;
a tin adsorption layer provided on a surface of the spherical resin; and
silver coated on a surface of the tin adsorption layer,
wherein an amount of the silver is in a range of 2 to 80 parts by mass with respect to 100 parts by mass of the silver-coated
spherical resin, and

a crystallite diameter of the silver measured by X-ray diffractometry is in a range of 18 to 24 nm.

US Pat. No. 9,074,299

POLYCRYSTALLINE SILICON ROD

MITSUBISHI MATERIALS CORP...

1. A polycrystalline silicon rod comprising a seed rod made of polycrystalline silicon, and a polycrystalline silicon deposit
which is deposited on an outer circumferential surface of the seed rod by the CVD process,
wherein a diameter of the polycrystalline silicon rod is 77 mm or less,
wherein when the polycrystalline silicon rod is observed by an optical microscope with respect to across section perpendicular
to an axis of the seed rod, needle-shaped crystals each having a length of 288 ?m or less are uniformly distributed radially
with the seed rod being as the center in the polycrystalline silicon deposit, and

wherein said needle-shaped crystals account for 78% or more area of the cross section.

US Pat. No. 9,773,597

COMPOSITE SOFT MAGNETIC MATERIAL HAVING LOW MAGNETIC STRAIN AND HIGH MAGNETIC FLUX DENSITY, METHOD FOR PRODUCING SAME, AND ELECTROMAGNETIC CIRCUIT COMPONENT

MITSUBISHI MATERIALS CORP...

1. A composite soft magnetic material comprising:
pure iron-based composite soft magnetic powder particles prepared by subjecting pure iron powder to an insulating treatment
to form a Mg-containing insulating film or a phosphate film on a surface of the pure iron powder particles; and

Fe—Si alloy powder particles consisting of 11% by mass to 16% by mass of Si and a remainder of Fe,
wherein a ratio of an amount of the Fe—Si alloy powder particles to a total amount of both of the pure iron-based composite
soft magnetic powder particles and the Fe—Si alloy powder particles is in a range of 10% by mass to 60% by mass, and

wherein boundary layers are included between the pure iron-based composite soft magnetic powder particles, between the Fe—Si
alloy powder particles, and between the pure iron-based composite soft magnetic powder particle and the Fe—Si alloy powder
particle.

US Pat. No. 9,242,297

PROCESS FOR PRODUCING POROUS SINTERED ALUMINUM, AND POROUS SINTERED ALUMINUM

MITSUBISHI MATERIALS CORP...

1. Porous sintered aluminum comprising:
metal skeletons having a three-dimensional network structure of perforated sintered metal,
wherein pores exist between the metal skeletons,
Al—Ti compound is dispersed in the perforated sintered metal, and the pores are formed at an amount of 20 or more pores per
linear length of 1 cm, and thereby, an overall porosity is in a range of 70 to 99%, and

pores exist in the metal skeleton of the perforated sintered metal.

US Pat. No. 9,169,560

APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON

MITSUBISHI MATERIALS CORP...

1. A polycrystalline silicon producing apparatus which produces a silicon rod by supplying raw material gas including chlorosilanes
to a silicon seed rod which is heated in a reactor so as to deposit polycrystalline silicon on the silicon seed rod, comprising:
the reactor; the silicon seed rod which is disposed in the reactor; a power supply which supplies electric current to and
heat the silicon seed rod; a pressure controller configured to control an inner pressure of the reactor in a range equal to
or larger than 0.4 MPa and equal to or lower than 0.9 MPa; a thermometer which measures a surface temperature of the silicon
rod; a current control device configured to control the surface temperature of the silicon rod measured by the thermometer
in a range equal to or higher than 1000° C. and equal to or lower than 1100° C.; a raw material gas-supply source which supplies
the raw material gas; a raw material gas-controller configured to control a supply amount of the raw material gas from the
raw material gas-supply source; and a pre-heater configured to control the raw material gas in a range equal to or higher
than 150° C. and equal to or lower than 600° C.; wherein the supply amount of the raw material gas is controlled by the raw
material gas-controller configured to control a supply amount of chlorosilanes included in the raw material gas is in a range
equal to or larger than 2.0×10?7 mol/sec/mm2 and equal to or smaller than 3.0×10?2 mol/sec/mm2 depending on a surface area of the growing silicon rod.

US Pat. No. 9,352,399

DRILL

MITSUBISHI MATERIALS CORP...

1. A drill comprising:
a drill body rotatable on an axis containing;
front flanks, each in the form of a single inclined plane,
chip evacuating flutes, which are open on said front flanks of the drill body and are extended rearwards, formed in a periphery
of the drill body on its front side, said chip evacuating flutes having rake faces that face a drill rotating direction, and

at least one cutting edge formed along a ridge line where the front flanks intersect with the rake faces; and
flank-flute connection portions, each of which is formed between the front flank and the chip evacuating flute in the drill
rotating direction; wherein

at least first and second front flanks are formed on the front flanks in order of their locations in the drill rotating direction
from its leading side to its trailing side,

a clearance angle of the second front flank is greater than that of the first front flank,
an intersection line of the first and second front flanks crosses the cutting edge,
at least one third front flank is formed adjacent to the second front flank in the trailing direction of the drill rotating
direction,

an intersection line of the second and third front flanks crosses the axis, and
each of the flank-flute connection portions is provided adjacent to the third front flank in the trailing direction of the
drill rotating direction.

US Pat. No. 9,076,755

METHOD FOR PRODUCING SUBSTRATE FOR POWER MODULE WITH HEAT SINK, SUBSTRATE FOR POWER MODULE WITH HEAT SINK, AND POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A substrate for a power module with a heat sink comprising;
a ceramic substrate,
a first metal plate made of aluminum with one surface being bonded to a surface of said ceramic substrate,
a second metal plate made of aluminum with one surface being bonded to a rear surface of said ceramic substrate, and
a heat sink made of aluminum or aluminum alloy and bonded to the other surface of said second metal plate, which is opposite
to said one surface bonded to said ceramic substrate,

and Cu is solid-solubilized into said second metal plate and said heat sink, and a Cu concentration at a position of 50 ?m
from a bonding surface between said second metal plate and said heat sink is set to a range of from 0.05% by mass to 5% by
mass inclusive.

US Pat. No. 9,059,406

PZT-BASED FERROELECTRIC THIN FILM AND METHOD OF MANUFACTURING THE SAME

MITSUBISHI MATERIALS CORP...

1. A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which a crystal
plane is oriented in a (111) axis direction, comprising:
an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation
is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm; and

a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation
as crystal orientation of the orientation controlling layer,

wherein an interface is present between the orientation controlling layer and the film thickness adjusting layer.

US Pat. No. 9,891,117

TEMPERATURE SENSOR

MITSUBISHI MATERIALS CORP...

1. A temperature sensor comprising:
an insulating film;
a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN;
a pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on at least one of the
top or the bottom of the thin film thermistor portion using a metal so as to face each other; and

a pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair
of interdigitated electrodes,
wherein at least a part of each of the pattern electrodes is formed of a conductive resin,
wherein the insulating film is comprised of the divisions of a distal film portion on which the thin film thermistor portion
and the interdigitated electrodes are formed and a proximal film portion on which the pattern electrodes are formed, and,

wherein the interdigitated electrodes and the pattern electrodes that is formed of a conductive resin are connected to each
other by a conductive resin and the distal film portion and the proximal film portion are connected to each other by a conductive
resin.

US Pat. No. 9,067,800

METHOD FOR MANUFACTURING TIN(II) OXIDE POWDER FOR REPLENISHING TIN COMPONENT OF TIN-ALLOY PLATING SOLUTION, AND TIN (II) OXIDE POWDER MANUFACTURED USING SAID METHOD

MITSUBISHI MATERIALS CORP...

1. A method for manufacturing tin(II) oxide powder for replenishing a tin component of a tin-alloy plating solution comprising
steps of:
preparing an aqueous acidic solution containing Sn2+ ions;

neutralizing the aqueous acidic solution at a liquid temperature of 30 to 50° C. and at a pH range of 6 to 8 in a nitrogen
gas atmosphere by adding an aqueous alkaline solution to prepare a slurry of tin(II) hydroxide;

dehydrating the prepared slurry in a nitrogen gas atmosphere to prepare a slurry of tin(II) oxide;
separating the slurry of tin(II) oxide into a solid and a liquid to obtain tin(II) oxide;
treating the obtained tin(II) oxide with an aqueous antioxidant solution having a concentration of 0.1 to 5% by mass; and
vacuum drying the tin(II) oxide treated with the aqueous antioxidant solution; wherein
the aqueous alkaline solution is an aqueous ammonia solution an ammonium bicarbonate solution or mixture thereof; and
the antioxidant is at least one selected from the group consisting of hydroquinone, catechol, resorcinol, pyrogallol, gallic
acid, glucose, galactose, fructose, ribose, xylose, maltose, lactose, hydrazine sulfate, carbohydrazide and sodium cyanotrihydroborate.

US Pat. No. 9,863,812

METHOD FOR MEASURING TEMPERATURE OF OBJECT IN ATMOSPHERE HAVING DUST

MITSUBISHI MATERIALS CORP...

1. A method for measuring a temperature of an object, the method using a first radiance meter which is provided to face the
object in an atmosphere where dust is present and measures a radiance of the object and a second radiance meter which is provided
without facing the object and measures a radiance of the dust present between the object and the first radiance meter so that
a temperature of the object is measured from the radiance of the object measured by the first radiance meter and the radiance
of the dust present between the object and the first radiance meter measured by the second radiance meter.

US Pat. No. 9,512,506

HIGH STRENGTH AND HIGH CONDUCTIVITY COPPER ALLOY ROD OR WIRE

MITSUBISHI SHINDOH CO., L...

1. A high strength and high conductivity copper rod or wire produced by a process including a continuous casting and rolling
process, the copper rod or wire comprising:
Co of 0.12 to 0.32 mass %;
P of 0.042 to 0.095 mass %;
Sn of 0.005 to 0.70 mass %; and
O of 0.00005 to 0.0050 mass %,
wherein a relationship of 3.0?([Co]?0.007)/([P]?0.008)?6.2 is satisfied between a content [Co] mass % of Co and a content
[P] mass % of P, and the remainder includes Cu and inevitable impurities, and wherein

a rolling start temperature in the continuous casting and rolling process is 860 to 1000° C., a total hot processing rate
is 75% or higher, and an average cooling rate in a temperature range of 850 to 400° C. is 10° C./second or higher,

a non-recrystallization ratio of a metal structure at completion of the continuous casting and rolling process is 10 to 80%
and an average grain size of a recrystallized part is 2.5 to 25 ?m, and

the non-recrystallization ratio in a vicinity of an outer peripheral portion of the copper rod or wire is effectively higher
than the non-recrystallization ratio in a center portion of the copper rod or wire, effective to increase the tensile strength
in the outer peripheral portion, the outer peripheral portion corresponding to a portion of 6/7R from the center portion of
the copper rod or wire.

US Pat. No. 9,835,493

METHOD FOR MEASURING TEMPERATURE OF OBJECT IN ATMOSPHERE HAVING DUST

MITSUBISHI MATERIALS CORP...

1. A method for measuring a temperature of an object, the method using a first radiance meter which is provided to face the
object in an atmosphere where dust is present and measures a radiance of the object and a second radiance meter which is provided
without facing the object and measures a radiance of the dust present between the object and the first radiance meter so that
a temperature of the object is measured from the radiance of the object measured by the first radiance meter and the radiance
of the dust present between the object and the first radiance meter measured by the second radiance meter.

US Pat. No. 10,057,993

MANUFACTURING METHOD OF POWER-MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A manufacturing method of power-module substrate, comprising:a circuit layer bonding step in which a circuit layer made of copper is brazed on one surface of a ceramic substrate made of aluminum nitride in vacuum atmosphere at a temperature of 800° C. or higher and 930° C. or lower;
a heat-radiation layer bonding step in which a heat-radiation layer made of aluminum is brazed on the other surface of the ceramic substrate;
a heat sink brazing step in which a heat sink is brazed on the heat-radiation layer using flux; and
a surface treatment step after the circuit layer bonding step and before the heat-radiation layer bonding step, in which a thickness of an oxide film on the other surface of the ceramic substrate is made 3.2 nm or less and 2.4 nm or more by cleaning the other surface of the ceramic substrate by one or more acids selected from hydrochloric acid, nitric acid, and sulfuric acid at least at a peripheral part of an intended bonding area between the ceramic substrate and the heat-radiation layer, wherein
a power-module substrate is manufactured so as to have: the ceramic substrate; the circuit layer bonded on the one surface of the ceramic substrate; and the heat-radiation layer bonded on the other surface of the ceramic substrate.

US Pat. No. 9,216,444

REACTOR CLEANING APPARATUS

MITSUBISHI MATERIALS CORP...

1. A method for cleaning a bell jar reactor used for producing polycrystalline silicon in a Siemens method, having a separate
inner wall and an outer wall structure, which generates polycrystalline silicon, the method comprising the steps of:
providing a lower opening edge of the bell jar on a substantially disc-shaped tray;
providing a shaft in a central portion of the tray in the vertical direction and a power source that is capable of rotating
the shaft in clockwise and anti-clockwise direction around an axis of the shaft;

fixing the lower opening edge of the bell jar reactor on the substantially disc-shaped tray;
rotating the shaft clockwise and anti-clockwise with the power source;
supplying a cleaning water to a nozzle device provided at an upper end of the shaft to spray the cleaning water to an inner
peripheral surface of the bell jar at high pressure in three-dimensional directions with the nozzle device;

draining a wasted cleaning water including a corrosive gas from a drainage hole formed in the tray;
supplying steam between an outer wall and an inner wall of the bell jar; and
drying the inner peripheral surface of the bell jar,
wherein a feed screw is formed on an outer peripheral portion of the shaft,
the tray is provided with a fixed nut which is screwed to the feed screw and guides the shaft upward and downward in accordance
with rotation of the shaft,

the nozzle device is rotated when the nozzle device is moving vertically upward and downward,
a rotary housing, which protrudes horizontally from the nozzle device, rotates around an axis perpendicular to an axis of
rotation of the nozzle device when the nozzle device is moving vertically, and

the cleaning water is sprayed from a nozzle provided on an outer circumference of the rotary housing in a direction perpendicular
to the rotating axis of the rotary housing, and

wherein the shaft is rotated in one direction when the shaft is moving vertically upward and the shaft is rotated in an opposite
direction when the shaft is moving vertically downward, and

wherein the rotary housing is rotated by physical force obtained from the cleaning water running through the nozzle device.

US Pat. No. 9,518,320

COPPER ALLOY SPUTTERING TARGET

MITSUBISHI MATERIALS CORP...

1. A copper alloy sputtering target made of a copper alloy having a composition comprising Ca in a range of 0.3 mass % to
1.7 mass % with a remainder of Cu and inevitable impurities,
wherein Ca-segregated phases in which Ca is segregated are dispersed in a matrix phase,
the Ca-segregated phase contains Cu-dispersed phases made of Cu,
an average grain diameter of the Ca-segregated phases is less than 10 ?m, and
an average grain diameter of the Cu-dispersed phases is set to 6 ?m or less.

US Pat. No. 9,758,384

BUBBLE SIZE MINIMIZING INTERNALS FOR FLUIDIZED BED REACTORS

Mitsubishi Polycrystallin...

1. A reactor with internals for minimizing bubble size comprising:
a reactor with a top, a bottom, and walls between the top and the bottom defining an internal space;
a center support in the center of the reactor extending vertically from a bottom part of the reactor to a top part of the
reactor;

a horizontal top support connected to the center support at the top part of the reactor;
a horizontal bottom support connected to the center support at the bottom part of the reactor;
a horizontal intermediate support connected to and rotatably adjustable on the center support between the horizontal top support
and the horizontal bottom support; and

vertically extending internals selected from the group consisting of cables; chains; coils; cords; hinged rods; rods; springs;
rods and chains or coils in a linear arrangement connected end to end; and an arrangement of any of the cables, chains, coils,
cords, hinged rods, rods, and springs, connected together; extending among the horizontal top support, the horizontal intermediate
support and the horizontal bottom support.

US Pat. No. 9,513,408

ANTIMONY-DOPED TIN OXIDE POWDER AND METHOD OF PRODUCING THE SAME

MITSUBISHI MATERIALS CORP...

1. An antimony-doped tin oxide powder comprising the following (A) to (C):
(A) including at least three kinds of ions selected from the group consisting of Sn2+, Sn4+, Sb3+ and Sb5+;

(B) having a ratio of an average Sn ionic radius which is an average of Sn2+ ionic radius and Sn4+ ionic radius, to an average Sb ionic radius which is an average of Sb3+ ionic radius and Sb5+ ionic radius, which is represented by the following formula (1); and

(C) having an Sb content of 5 to 25 moles relative to a total of 100 moles of Sb and Sn, wherein
(average Sn ionic radius):(average Sb ionic radius)=1:(0.96 to 1.04)  (1).

US Pat. No. 9,329,105

SAMPLING METHOD AND SAMPLING DEVICE OF RECYCLED RAW MATERIAL, ANALYSIS SAMPLE OF RECYCLED RAW MATERIAL, AND EVALUATION METHOD OF RECYCLED RAW MATERIAL

MITSUBISHI MATERIALS CORP...

1. A sampling method of recycled raw material, the method comprising:
a process of primarily crushing recycled raw material;
a process of separating primarily crushed raw material into three components, “scrap iron”, “scrap aluminum”, and “recycled
raw material component other than scrap iron and scrap aluminum”;

a process of performing a primary sample reduction of “the recycled raw material component other than scrap iron and scrap
aluminum” which is separated at least after the primary crushing process;

a process of secondarily crushing “the recycled raw material component other than scrap iron and scrap aluminum”, which is
subjected to the primary sample reduction, into a size less than that in the primary crushing process and performing a secondary
sample reduction of “the recycled raw material component other than scrap iron and scrap aluminum” which is secondarily crushed;

a process of obtaining a weight ratio of the three components, “scrap iron”, “scrap aluminum”, and “the recycled raw material
component other than scrap iron and scrap aluminum” which are primarily crushed; and

a mixing process of mixing “scrap iron”, “scrap aluminum”, and “the recycled raw material component other than scrap iron
and scrap aluminum” which is subjected to the secondary sample reduction at a mixing ratio corresponding to the weight ratio
obtained in the previous process,

wherein a mixture obtained in the mixing process is set as an analysis sample.

US Pat. No. 9,534,961

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

MITSUBISHI MATERIALS CORP...

1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: (M1?vAv)xAly(N1?wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected
from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0 and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

US Pat. No. 9,472,380

SILICON PART FOR PLASMA ETCHING APPARATUS AND METHOD OF PRODUCING THE SAME

MITSUBISHI MATERIALS CORP...

1. A silicon part, which is used for a plasma etching apparatus and used in a reaction chamber of the plasma etching apparatus,
wherein
the silicon part is made of any one selected from the group consisting of poly-crystalline silicon and mono-like silicon,
the silicon part includes boron as a dopant in a range from 1×1018 atoms/cc or higher to 1×1020 atoms/cc or lower, and

a nitrogen concentration in the silicon part is in a range from 7×1014 atoms/cc or higher to 4×1015 atoms/cc or lower wherein a percentage of crystal orientation distribution in a (111) area is 70% or more, the percentage
of crystal orientation distribution in a (111) area being obtained by measuring crystal orientation on a surface of the silicon
part by an EBSD method to obtain crystal orientation distribution in a stereographic triangle whose vertexes correspond to
crystal surfaces (001), (101), and (111), splitting the stereographic triangle into a (001) area, (101) area, and the (111)
area with lines connecting midpoints of each side and a centroid of the stereographic triangle, and dividing a number of measured
points in each area by a total number of measured points to obtain percentages of crystal orientation in each area.

US Pat. No. 9,650,294

BURNED CEMENT CLINKER AND METHOD FOR PRODUCING THE SAME

MITSUBISHI MATERIALS CORP...

1. A burned cement clinker, comprising:
fluorine;
sulfur;
at least one selected from the group consisting of chlorine and bromine;
metallic elements consist of vanadium, cobalt, nickel, copper and zinc; and
tricalcium silicate, dicalcium silicate, tricalcium aluminate, and calcium aluminoferrite, wherein,
an amount of the metallic elements are within a range from 0.4 to 0.8% by mass, and
the amount of the metallic elements corresponds to a sum of the amount of zinc and the amounts of the respective metallic
elements expressed in terms of zinc.

US Pat. No. 9,560,755

BONDING BODY, POWER MODULE SUBSTRATE, AND HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A bonding body comprising:
an aluminum member composed of aluminum; and
a metal member composed of any of copper and silver,
wherein the aluminum member and the metal member are bonded together,
wherein in a bonding portion between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed,
the Ti layer being disposed at the metal member side; and
the Al—Ti—Si layer being disposed between the Ti layer and the aluminum member and containing Si which is solid-solubilized
into Al3Ti, and

wherein the Al—Ti—Si layer includes:
a first Al—Ti—Si layer formed at the Ti layer side; and
a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration
of the first Al—Ti—Si layer.

US Pat. No. 9,279,729

INFRARED SENSOR

MITSUBISHI MATERIALS CORP...

1. An infrared sensor comprising:
an insulating film;
a first heat sensitive element and a second heat sensitive element that are disposed on one surface of the insulating film
so as to be separated apart from one another;

a first conductive wiring film and a second conductive wiring film that are formed on one surface of the insulating film and
are respectively connected to the first heat sensitive element and the second heat sensitive element;

an infrared reflection film that is disposed on the other surface of the insulating film so as to face the second heat sensitive
element;

a reinforcing plate on which a sensor part window corresponding to the region of the first heat sensitive element, the second
heat sensitive element, and the infrared reflection film is formed and which is adhered to one surface of the insulating film;

a plurality of terminal electrodes that are respectively connected to the first conductive wiring film and the second conductive
wiring film, are formed on the edge of the other surface of the insulating film, and are capable of being fitted into a external
connector, and

a sealing member adhered to the reinforcing plate, which sealing member is for sealing the sensor part window and can reflect
infrared radiation from outside;

wherein the reinforcing plate extends to a region facing the terminal electrodes.
US Pat. No. 9,620,668

COMPOSITION FOR MANUFACTURING ELECTRODE OF SOLAR CELL, METHOD OF MANUFACTURING SAME ELECTRODE, AND SOLAR CELL USING ELECTRODE OBTAINED BY SAME METHOD

MITSUBISHI MATERIALS CORP...

1. A composition for manufacturing an electrode, comprising:
metal nanoparticles dispersed in a dispersive medium,
wherein the metal nanoparticles contains silver nanoparticles of 75 weight % or more,
the metal nanoparticles are chemically modified by a protective agent having a main chain of organic molecule comprising a
carbon backbone of carbon number of 1 to 3,

the metal nanoparticles contain 70% or more in number-average of metal nanoparticles having a primary grain size within a
range of 10 to 50 nm, and

the composition further comprises one or two or more species of an additive selected from a group consisting of metal oxides,
metal hydro-oxides, organic metal compounds, and silicone oils.

US Pat. No. 9,237,682

POWER MODULE SUBSTRATE WITH HEAT SINK, AND METHOD FOR PRODUCING POWER MODULE SUBSTRATE WITH HEAT SINK

MITSUBISHI MATERIALS CORP...

1. A power module substrate with a heat sink, comprising:
a power module substrate having a circuit layer disposed on one surface of an insulating layer, and
a heat sink bonded to an other surface of the power module substrate, wherein
a bonding surface of the heat sink and a bonding surface of the power module substrate are each composed of aluminum or an
aluminum alloy,

a metal layer, which is composed of a rolled sheet of aluminum or an aluminum alloy, is formed on an other surface of the
insulating layer in the power module substrate, and the heat sink bonded to the metal layer,

a bonding layer having a Mg-containing compound (excluding MgO) which contains Mg dispersed in an Al-Si eutectic composition
is formed at a bonding interface between the heat sink and the power module substrate,

a thickness of the bonding layer is within a range from not less than 5 ?m to not more than 80 ?m, and
a MgO content in the bonding layer is not more than 20% by area.

US Pat. No. 9,862,045

POWER-MODULE SUBSTRATE AND MANUFACTURING METHOD THEREOF

MITSUBISHI MATERIALS CORP...

1. A power-module substrate made by bonding a metal plate made of aluminum or aluminum alloy to at least one surface of a
ceramic substrate in a shape of a plate by brazing, wherein residual oxide existing continuously by 2 ?m or more along a bonded
interface between the metal plate and the ceramic substrate has total length of 70% or less and 20% or more with respect to
a length of a field of 3000 magnifications by observing a cross section of the metal plate in a depth extent of 5 ?m from
the bonded interface in a width area of 200 ?m from a side edge of the metal plate by a scanning electron microscope.

US Pat. No. 9,968,012

HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE, HEAT-SINK-ATTACHED POWER MODULE, AND METHOD FOR PRODUCING HEAT-SINK-ATTACHED POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A heat-sink-attached-power module substrate which includes a power module substrate in which a circuit layer is arranged on one surface of an insulation layer and a metal layer is arranged on the other surface of the insulation layer, and a heat sink bonded on the metal layer of the power module substrate,wherein either one of the metal layer and the heat sink is an aluminum member composed of aluminum or an aluminum alloy,
and the other one of them is a copper member composed of copper or a copper alloy,
the metal layer and the heat sink are bonded together by solid phase diffusion bonding,
an intermetallic compound layer of copper and aluminum is formed by solid phase diffusion in a bonding interface between the metal layer and the heat sink, and has a structure in which a plurality of intermetallic compounds are formed in a layered form and laminated along the bonding interface, and
an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer composed of copper or a copper alloy and heat sink composed of copper or a copper alloy in a layered form along the interface,
wherein the intermetallic compound layer has a structure in which a ? phase, a ?2 phase, and at least one phase selected from the group consisting of a ?2 phase, a ? phase, and a ?2 phase are laminated sequentially from the aluminum member toward the copper member.

US Pat. No. 9,502,636

COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF

MITSUBISHI MATERIALS CORP...

1. A composition for the formation of a ferroelectric thin film which is used in the formation of a ferroelectric thin film
of one material selected from the group consisting of PLZT, PZT, and PT, wherein the composition is a liquid composition for
the formation of a thin film of a composite metal oxide formed of a mixture of a composite metal oxide A represented by the
general formula (1): (PbxLay)(ZrzTi(1-z))O3 [In the formula (1), 0.9 (2): CnH2n+1COOH (wherein 3?n?7) and capable of taking the structure of the following general Chemical Formula (3) upon coordination with
the metal element of the composite metal oxide A,
the composition comprising an organometallic compound solution wherein a raw material of the composite metal oxide A, and
the carboxylic acid B are dissolved in an organic solvent in such a manner that the molar ratio B/A of the carboxylic acid
B to the composite metal oxide A is in the range of 0
wherein a pseudo-carboxylate in which the carboxylic acid B is coordinated to the metal element of the composite metal oxide
A takes a structure of a 6-membered ring by an action of a hydrogen bond


[in the Chemical Formula (3), within the range satisfying “n” of the general formula (2): CnH2n+1 COOH, R1, R2, R3, R4, R5, and R6 represent hydrogen, a methyl group or an ethyl group, M represents Pb, La, Zr or Ti, and
m represents a valence of M].

US Pat. No. 9,212,419

SPUTTERING TARGET FOR FORMING WIRING FILM OF FLAT PANEL DISPLAY

MITSUBISHI MATERIALS CORP...

1. A wiring film of a flat panel display consisting of a copper alloy thin film which has a composition consisting of: Mg:
0.1 to 5 atom %; either one or both of Mn and Al: 0.6 to 11 atom % in total; and the balance of Cu and inevitable impurities,
wherein a relation of (Al+Mn)/Mg?0.38 is fulfilled, and
a multiple oxide or an oxide solid solution which includes Mg with either one or both of Mn and Al is formed in a front surface
and a rear surface of the wiring film.

US Pat. No. 9,660,127

SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A sputtering target having a component composition that contains 1 to 40 at % of Ga, 0.05 to 2 at % of Na as metal element
components, and the balance composed of Cu and unavoidable impurities, wherein the sputtering target contains Na in at least
one form selected from among sodium fluoride, sodium sulfide, and sodium selenide and the content of oxygen is from 100 to
1,000 ppm.

US Pat. No. 9,648,737

BONDED BODY AND POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A bonded body comprising:
a ceramic member made of ceramics; and
a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material
and a Ti material,

wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member
and the Cu member, and

intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

US Pat. No. 9,616,401

CEMENT PRODUCTION APPARATUS

MITSUBISHI MATERIALS CORP...

1. A cement production apparatus comprising:
a plurality of cyclones vertically connected to each other in which exhaust gas generated in a cement kiln flows;
a duct provided between two upper cyclones and a lower cyclone being arranged below the upper cyclones, the duct in which
the exhaust gas drained from the lower cyclone flows upward, distributing and introducing the exhaust gas to the upper cyclones;

material-supplying pipes to supply cement raw material, each of the material-supplying pipes connected to a corresponding
side part of the duct below a distribution part among the upper cyclones; and

a supply-amount controller provided on an upstream position above the material-supplying pipes to control supply-amounts of
the cement raw material to the material-supplying pipes,

wherein H is a vertical distance between a horizontal surface passing through centers of distribution outlets of the upper
cyclones and a horizontal surface passing through centers of connecting ports of the material-supplying pipes, D is a diameter
of the duct, and a ratio H/D is set to 1.4 to 2.5.

US Pat. No. 9,533,279

METHOD AND APPARATUS FOR MANUFACTURING TRICHLOROSILANE

MITSUBISHI MATERIALS CORP...

1. A method for manufacturing polycrystalline silicon, comprising the steps of:
a) reacting a metallurgical grade silicon and hydrogen chloride in a chlorination reactor to produce chlorosilanes, including
crude trichlorosilane, and polymer containing high boiling chlorosilane compounds which have boiling points higher than a
boiling point of silicon tetrachloride;

b) distilling the chlorosilanes and the polymer in a first distillation column to obtain a purified trichlorosilane from and
a distillation residue including the polymer;

c) mixing, in an evaporator, the purified trichlorosilane from the first distillation column, with hydrogen, trichlorosilane,
and silicon tetrachloride, which are recovered from downstream steps, to produce a raw material gas;

d) introducing the raw material gas into a reactor, in which silicon rods are heated to a temperature of 900° C. to 1200°
C., to deposit polycrystalline silicon on the silicon rods;

e) cooling an exhaust gas from the reactor of step d) in a condenser to obtain liquefied chlorosilanes and a gas including
hydrogen and hydrogen chloride;

f) separating the hydrogen from the hydrogen chloride and feeding the hydrogen back to the evaporator of step c);
g) distilling the liquefied chlorosilanes from the condenser of step e) to obtain a residue containing polymers and distilled
chlorosilanes containing trichlorosilane and silicon tetrachloride;

h) introducing a first portion of the distilled chlorosilanes obtained in step g) into a trichlorosilane conversion step via
a second evaporator;

i) reacting silicon tetrachloride in the first portion of the distilled chlorosilanes with hydrogen in the trichlorosilane
conversion step at a high temperature of 800° C. or more and 1300° C. or less to produce trichlorosilane;

j) introducing a gas including the produced trichlorosilane in step i) into a condenser to obtain a liquefied stream;
k) returning the liquefied stream obtained in step j) to the distilling of step g);
l) supplying a second portion of the distilled chlorosilanes obtained from the distilling of step g) to the evaporator of
step c);

m) supplying the polymers from the distilling the liquefied chlorosilanes of step g) and the polymer from the first distillation
column of step b) to a decomposition furnace through a first supply pipe which extends from a top to a bottom of the decomposition
furnace by meandering in a spiral shape while preheating the polymer in the first supply pipe;

n) supplying hydrogen chloride to the decomposition furnace through a second supply pipe which extends from the top to the
bottom of the decomposition furnace in a straight pipe while preheating the hydrogen chloride in the second supply pipe;

o) mixing the preheated polymers supplied through the first supply pipe and the preheated hydrogen chloride supplied through
the second supply pipe in the decomposition furnace to react the polymer and the hydrogen chloride at a temperature of 450°
C. to 700° C. in the decomposition furnace to obtain products including trichlorosilane and silicon tetrachloride; and

p) introducing the products obtained in step o) into the chlorination reactor of step a),
wherein the polymers and the hydrogen chloride are not mixed during the preheating steps and do not react with each other
during the preheating step so that reactants adhering to and obstructing an inside of the first and second supply pipes will
not occur.

US Pat. No. 9,142,888

ANTENNA-DEVICE SUBSTRATE AND ANTENNA DEVICE

MITSUBISHI MATERIALS CORP...

1. An antenna-device substrate comprising:
an insulating substrate main body;
a ground plane, a first element, a second element, and a third element each of which is in the form of metal foil and has
been patterned on the surface of the substrate main body; and

a short part connecting a part of the first element and a part of the second element,
wherein the first element is provided with a feed point at the base end and extends comprising a first connector of which
the intermediate part is connectable to a first passive element, the second element is connected to the ground plane at the
base end and is provided with a first antenna element of a dielectric antenna at the tip end, and extends comprising a second
connector to which a second passive element is connectable and a fourth passive element connected closer to the ground plane
side than the second connector, the third element extends comprising a third connector to which a third passive element is
connectable and the base end of the third element is connected closer to the base end side than the first connector of the
first element, the short part is connected between the position closer to the base end side than the first connector of the
first element and the portion from the second connector to the fourth passive element of the second element, and the first
element extends with a gap provided between the first element and each of the second element, the third element, and the ground
plane such that a floating capacitance can be generated between the first element and each of the second element, the third
element, and the ground plane.

US Pat. No. 9,863,453

MECHANICAL SEED COUPLING

Mitsubishi Polycrystallin...

1. A mechanical seed coupler for coupling two seed rods comprising:
a body, consisting of at most three inner surfaces, surrounding a hollow space for accepting tips of two seed rods for coupling,
having a tapered, uninterrupted surface on one end of the body and a tapered, uninterrupted surface on the other end of the
body, both tapered, uninterrupted surfaces being connected to the hollow space, wherein the each surface is configured for
accepting a corresponding tip of the two seed rods having a corresponding surface,

wherein the body is made from polycrystalline silicon.

US Pat. No. 9,636,748

SURFACE-COATED CUTTING TOOL

Mitsubishi Materials Corp...

1. A surface-coated cutting tool comprising:
a cutting tool body made of tungsten carbide-based cemented carbide or titanium carbonitride-based cermet; and
a hard coating layer chemically vapor-deposited on a surface of the cutting tool body, wherein
the hard coating layer comprises a lower layer formed on the surface of the cutting tool body and an upper layer formed on
the lower layer,

(a) the lower layer is a Ti compound layer, which comprises one or more layers selected from the group consisting of a Ti
carbide layer, a Ti nitride layer, a Ti carbonitride layer, a Ti carboxide layer, and a Ti oxycarbonitride layer, with a total
average thickness of 3 to 20 ?m,

(b) the upper layer is an Al2O3 layer, which has an ? crystal structure in a chemically vapor-deposited state, with an average thickness of 2 to 15 ?m,

(c) an area ratio occupied by hexagonal Al2O3 crystal grains having the inclinations of the normal lines of (11-20) planes being 0 to 10° is in a range of 30 to 70 area
%, wherein the area ratio of the normal lines of (11-20) planes is determined by: preparing a polished cross section of the
surface-coated cutting tool perpendicular to the surface of the cutting tool body; irradiating an electron beam to each of
hexagonal Al2O3 crystal grains of the upper layer contacting to an interface between an outermost surface layer of the lower layer and the
upper layer within a measurement area on the polished cross section with an electric field emitting scanning electron microscope;
and measuring inclinations of normal lines of (11-20) planes of the hexagonal Al2O3 crystal grains relative to a normal line of the surface of the cutting tool body, and

(d) an area ratio occupied by hexagonal Al2O3 crystal grains having the inclinations of the normal lines of (0001) plane being 0 to 10° is 45 area % or more, wherein the
area of the normal lines of (0001) plane is determined by: irradiating an electron beam to each of hexagonal Al2O3 crystal grains of the entire upper layer within a measurement area on the polished cross section with an electric field emitting
scanning electron microscope; and measuring inclinations of normal lines of (0001) planes of the hexagonal Al2O3 crystal grains relative to a normal line of the surface of the cutting tool body.

US Pat. No. 9,947,436

INSULATED ELECTRIC WIRE AND METHOD FOR MANUFACTURING SAME

MITSUBISHI MATERIALS CORP...

1. An insulated electric wire comprising: a copper wire; and an insulating coating formed on a surface of the copper wire by an electrodeposition method, whereina cross section shape of the insulated electric wire including the insulating coating is in a hexagonal shape,
a chamfered part that suppresses swelling of the insulating coating is formed on each corner part of a hexagonal cross section of the copper wire,
a length of the chamfered part is ? to 1/20 of a length of a flat part of the hexagonal cross section, and
a void ratio in a wound state is 5% or less.

US Pat. No. 9,693,449

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH METAL PART, POWER MODULE WITH METAL PART, METHOD FOR PRODUCING POWER MODULE SUBSTRATE, AND METHOD FOR PRODUCING POWER MODULE SUBSTRATE WITH METAL PART

Mitsubishi Materials Corp...

1. A power module substrate with a metal part comprising:
an insulating layer;
a circuit layer that is formed on a first surface of the insulating layer; and
a metal part that is bonded to a metal layer side of the power module substrate;
a metal layer that is formed on a second surface of the insulating layer; and
a metal part that is bonded to a metal layer side of the power module substrate, wherein
a first base layer, to which a bonding layer composed of a sintered body of a bonding material including at least one of metal
particles and metal oxide particles is bonded, is laminated on a surface of the metal layer on an opposite side of the surface,
to which the insulating layer is provided,

the first base layer has: a first glass layer that is formed at the interface with the metal layer, and a first Ag layer that
is laminated on the first glass layer,

the bonding layer that is composed of a sintered metal material is formed between the first base layer and the metal part,
and

the bonding layer of the power module substrate with a metal part is composed of a sintered body of a bonding material including
at least one of metal Ag particles and Ag oxide particles.

US Pat. No. 9,598,312

METHOD FOR CONTROLLING FREE LIME CONTENT OF CLINKER

MITSUBISHI MATERIALS CORP...

1. A method for controlling a free lime content of a cement clinker, comprising:
adding fluorite or fluorine-containing waste that is a fluorine source in the cement clinker and used as a mineralizer to
raw materials of the cement clinker,

intermixing a waste gypsum board powder with fuel or putting the waste gypsum board powder into a kiln from the kiln outlet
part as an SO3 source in the cement clinker,

burning the raw materials of the cement clinker added the fluorite or the fluorine-containing waste in the kiln to produce
the cement clinker,

calculating the free lime content (f.CaO) of the cement clinker according to Formulas (1) to (3),
adjusting an additive amount of fluorite or fluorine-containing waste and an used amount of fuel or an additive amount of
waste gypsum according to the calculated free lime content to control the free lime content (f.CaO) so as to fall within a
range of 0.5
f.CaO=0.29×e(0.65×A)(A=a×SO3 +b)  (1)

a=0.0001×F+9.2×t?0.18×HM?9.2  (2)

b=?0.0005×F?32.8×t+2.9HM+28.4  (3)

in Formula (1), f.CaO is a free lime content (wt %),
SO3 is an amount (wt %) of sulfur trioxide in the cement clinker,

a is a coefficient satisfying Formula (2),
b is a coefficient satisfying Formula (3),
F is an amount (mg/kg) of fluorine in the cement clinker,
t is a coefficient determined based on a temperature of 1450° C. (when a burning temperature is X° C., t=X/1450), and
HM is a hydraulic modulus.

US Pat. No. 9,549,821

VERTEBRAL BODY SPACER

MITSUBISHI MATERIALS CORP...

1. A vertebral body spacer to be used by being inserted between vertebral bodies, comprising:
at least one block body constituted of titanium or a titanium alloy as a main component thereof, and the block body having
a pair of contact surfaces to be made contact with the vertebral bodies, respectively, and

wherein the block body includes needle parts each formed into a needle shape having both end portions and a porous part having
through holes passing through the porous part in a thickness direction thereof, and a porosity of at least a surface of the
porous part is larger than a porosity of each of the needle parts,

wherein the needle parts are inserted into the through holes so that the both end portions are projected from the contact
surfaces, so that the both end portions exhibit a function of fixing the block body between the vertebral bodies, and

wherein the pair of the contact surfaces are offset from one another and disposed on opposite sides of the block body, and
wherein each contact surface constitutes substantially a planar surface.

US Pat. No. 9,669,462

POROUS ALUMINUM SINTERED COMPACT

MITSUBISHI MATERIALS CORP...

1. A porous aluminum sintered compact in which a plurality of aluminum base materials are sintered together,
wherein the aluminum base materials are composed of aluminum fibers and aluminum powder with a mixing ratio of aluminum powder
in a range of 1.0 mass % to 10 mass %,

molten aluminum inside the aluminum base material is ejected outwards and solidified in a sintering step so that columnar
protrusions protruding outwards are formed on an outer surface of the aluminum base material,

shapes of the aluminum base materials are maintained after being melted,
the porous aluminum sintered compact includes bonding portions at which the aluminum base materials are bonded together through
the columnar protrusions, and

a Ti—Al-based compound is present in bonding portions.

US Pat. No. 9,598,561

SILVER POWDER FOR SILVER CLAY AND SILVER CLAY INCLUDING SAME SILVER POWDER

MITSUBISHI MATERIALS CORP...

1. A silver clay comprising a silver powder, a binder, and a balance of water, wherein
a main component of the silver powder is Ag, and an amount of P is controlled to be 20 ppm or more and 70 ppm or less, and
the silver is obtained by atomizing molten silver using water containing 15 ppm or less of P.

US Pat. No. 9,493,871

SURFACE-COATED CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool comprising:
a hard coating layer which is vapor-deposited on a surface of a tool body made of a sintered tungsten carbide-based cemented
carbide, wherein

(a) a composition of the hard coating layer is expressed by a composition formula of (AlxTil-x)N (0.5 ?x?0.8), and an average layer thickness of the hard coating layer is 0.5 ?m to 7.0 ?m,

(b) the hard coating layer is formed of fine crystal grains having an average grain size of 5 nm to 50 nm,
(c) the fine crystal grains have a mixed structure including both cubic crystal grains having a rock-salt structure, and hexagonal
crystal grains having a wurtzite structure, and

(d) {200} planes of the cubic crystal grains and {11-20} planes of the hexagonal crystal grains are oriented so as to be perpendicular
to the surface of the tool body.

US Pat. No. 9,480,144

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, AND POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on an
other surface of the insulating substrate, wherein

the circuit layer is composed of oxygen-free copper (OFC) or 6N—Cu, and one surface of this circuit layer functions as an
installation surface on which an electronic component is installed,

the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy,
a thickness t1 of the circuit layer is within a range of 0.1 mm
a thickness t2 of the metal layer is within a range of 0.5 mm
a relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer satisfies t1
a relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer is t2/t1?4.00, and

an indentation hardness HB1 of the circuit layer in a vicinity of an bonding interface with the insulating substrate is set within a range of 60 mgf/?m2?HB1?120 mgf/?m2.

US Pat. No. 9,203,145

ANTENNA-DEVICE SUBSTRATE AND ANTENNA DEVICE

MITSUBISHI MATERIALS CORP...

1. An antenna-device substrate comprising:
an insulating substrate main body; and
a first element, a second element, a third element, a ground plane, and a ground connection pattern each of which is in the
form of metal foil and has been patterned on the substrate main body,

wherein the first element is provided with a feed point at the base end and extends while having a power feeding-side passive
element, a first connecting portion to which a first passive element is connectable, and an antenna element of a dielectric
antenna in this order at the intermediate portion,

the second element extends such that the base end thereof is connected via a second connecting portion to which a second passive
element is connectable between the power feeding-side passive element and the first connecting portion of the first element,

the third element extends such that the base end thereof is connected via a third connecting portion to which a third passive
element is connectable between the power feeding-side passive element and the first connecting portion of the first element,

the ground connection pattern is connected to the ground plane and is connected closer to the base end side than the connecting
portion between the second element and the third element of the first element via a ground-side passive element,

the first element extends with a gap provided between the first element and each of the second element, the third element,
and the ground plane such that a stray capacitance is capable of being generated between the first element and each of the
second element, the third element, and the ground plane, and

at least one of the first element, the second element, and the third element is patterned from the surface to the rear surface
of the substrate main body via a through-hole.

US Pat. No. 9,138,301

MEDICAL DEVICE AND SURFACE MODIFICATION METHOD FOR MEDICAL DEVICE

MITSUBISHI MATERIALS CORP...

1. A medical device comprising:
a main body which is an artificial prosthetic member made of metal or ceramics; and
a metallic porous sintered body joined to at least a part of a surface of the main body,
wherein the metallic porous sintered body is made of a sintered metal powder and includes a plurality of metallic porous thin
layers including a first thin layer joining to the main body and a second thin layer coming in contact with living tissue,

a porosity of the first thin layer is lower than the second thin layer,
the porosity of each of the metallic porous thin layers is in the range of 40 to 97%,
each of the first and second porous thin layers is prepared by molding a slurry, which contains a metal powder and a foaming
agent, into a sheet shape by a doctor blade method, subjecting the slurry to a foaming process, drying the slurry, and defatting
and sintering the resulting compact,

an average pore diameter in the first and the second thin layers is in the range of 20 to 800 ?m,
each of the first and second thin layers has a three-dimensionally-open pore structure in a substantially spherical shape
defined by foams formed by an action of the foaming agent in the foaming process, and

a specific surface area of each of the first and the second thin layers is in a range of 0.01 to 0.5 m2/g.

US Pat. No. 9,653,191

COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE, CONDUCTIVE COMPONENT FOR ELECTRIC AND ELECTRONIC DEVICE, AND TERMINAL

MITSUBISHI MATERIALS CORP...

1. A copper alloy for electric and electronic devices, the copper alloy comprising:
7.1 mass % to 15.0 mass % of Zn;
0.10 mass % to 0.90 mass % of Sn;
0.05 mass % to less than 1.00 mass % of Ni;
0.001 mass % to 0.053 mass % of Fe;
0.005 mass % to 0.100 mass % of P; and
a remainder including Cu and unavoidable impurities,
wherein a ratio Fe/Ni of a Fe content to a Ni content satisfies 0.002?Fe/Ni<1.500 by atomic ratio,
a ratio (Ni+Fe)/P of a total content (Ni+Fe) of Ni and Fe to a P content satisfies 5.5?(Ni+Fe)/P<100.0 by atomic ratio,
a ratio Sn/(Ni+Fe) of a Sn content to the total content (Ni+Fe) of Ni and Fe satisfies 0.10 a yield ratio YS/TS is more than 90.0% which is calculated from a tensile strength TS and a 0.2% yield strength YS when a
tensile test is performed in a direction parallel to a rolling direction, and

the 0.2% yield strength YS is more than or equal to 494 MPa.

US Pat. No. 9,607,812

SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A sputtering target having a component composition that contains 10 to 40 at % of Ga and 1.0 to 15 at % of Na as metal
element components other than F, S, and Se, with the remainder composed of Cu and unavoidable impurities,
wherein
the Na is contained in the form of at least one Na compound selected from sodium fluoride, sodium sulfide, and sodium selenide,
the sputtering target has a theoretical density ratio of 90% or higher,
a flexural strength of 100 N/mm2 or higher,

a bulk resistivity of 1 m?·cm or less,
a content of oxygen of 200 to 2000 ppm, and
the number of 0.05 mm2 or larger aggregates of the Na compound present per cm2 area of the target surface is 1 or less on average.

US Pat. No. 9,168,502

APPARATUS FOR PRODUCING TRICHLOROSILANE

MITSUBISHI MATERIALS CORP...

1. An apparatus for producing trichlorosilane in which reacted gas including trichlorosilane and hydrogen chloride is produced
by heating raw gas including silicon tetrachloride and hydrogen, the apparatus comprising:
a reaction vessel having a substantially cylindrical shape and being provided with a heated wall forming a gas flow-passage
along an axis direction; and

a heater heating the heated wall, whereina folding flow-passage is provided at an uppermost stream of the gas flow passage,
the folding flow-passage has:
an inlet flow-passage in which raw gas is introduced from outside of the reaction vessel and flows the raw gas along the axis
direction; and

a turning part connected to a downstream of the inlet flow-passage in which a flow direction of the raw gas is turned at least
once in an opposite direction,

the turning part is formed between the inlet flow-passage and the heated wall in the folding flow-passage, and
a turning length of the folding flow-passage along the axis direction is not more than 50% of a maximum length of the gas
flow-passage along the axis direction.

US Pat. No. 9,725,367

APPARATUS AND METHOD FOR PRODUCING (METAL PLATE)-(CERAMIC BOARD) LAMINATED ASSEMBLY, AND APPARATUS AND METHOD FOR PRODUCING POWER-MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A method for producing (metal plate)-(ceramic board) laminated assembly wherein a bonding-material layer is formed on one
of a ceramic board or a metal plate, temporary-bonding material is formed on one plate of the ceramic board or the metal plate,
the ceramic board and the metal plate are temporarily stuck together in a piled state with the bonding-material layer therebetween
by the temporary-bonding material, so that the ceramic board and the metal plate are laminated,
the method comprising
a forming step of the solidified temporary-bonding material on one plate of the ceramic board or the metal plate, and
a laminating step comprising the steps of conveying the one plate onto the other plate of the ceramic board or the metal plate,
melting the temporary-bonding material on the way of conveying, laminating the ceramic board and the metal plate, in a state
in which the temporary-bonding material is melted, and then solidified the temporary-bonding material.

US Pat. No. 9,595,393

DIELECTRIC-THIN-FILM FORMING COMPOSITION, METHOD OF FORMING DIELECTRIC THIN FILM, AND DIELECTRIC THIN FILM FORMED BY THE METHOD

MITSUBISHI MATERIALS CORP...

1. A dielectric-thin-film forming composition for forming a BST dielectric thin film, comprising:
a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide
B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba1-xSrxTiyO3 (wherein 0.2
wherein the liquid composition is an organic metal compound solution in which raw materials for composing the composite metal
oxide A and raw materials for composing the composite oxide B are dissolved in an organic solvent at a proportion of giving
a metal atom ratio expressed by the formula shown above and at a molar ratio between A and B in the range of 0.001?B/A<0.15,

the raw materials for composing the composite metal oxide A are organic metal compounds, wherein one of the raw materials
for comprising the composite metal oxide A is a compound in which an organic group is bonded to the respective metallic elements
of Ba, Sr, and Ti via an oxygen atom or a nitrogen atom thereof, and

the raw materials for composing the composite oxide B are organic metal compounds, wherein one of the raw materials for composing
the composite oxide B is at least one compound selected from a group consisting of copper naphthenate, copper n-octanoate,
copper 2-ethylbutyrate, copper n-valerate, copper i-valerate, copper n-butyrate, copper i-butyrate, copper propionate, and
copper acetate.

US Pat. No. 9,550,238

REPLACEABLE MACHINING HEAD

MITSUBISHI MATERIALS CORP...

1. A replaceable machining head comprising:
a cutting edge section which is formed on the front side of a head body;
a tool attaching portion to which a working tool is to be attached, and which is formed on the rear end side of the cutting
edge section; and

tool attaching faces which are formed in the tool attaching portion,
wherein the surface of the head body is coated with a coating film, and
the number of droplets or macro particles having convex shapes with a size of 0.3 ?m to 5.0 ?m, is 200 or less, per area of
40 ?m×60 ?m on the surface of the coating film over the tool attaching faces.

US Pat. No. 9,783,904

HIGH-PURITY ELECTROLYTIC COPPER AND ELECTROLYTIC REFINING METHOD THEREOF

MITSUBISHI MATERIALS CORP...

1. An electrolytic refining method of high-purity electrolytic copper, the method comprising:
performing electrolysis by using one electrolyte which includes a copper nitrate solution, a cathode made of stainless steel,
and an anode made of copper so as to deposit high-purity electrolytic copper on the cathode,

wherein (a) the electrolyte includes a mixture of polyethylene glycol and polyvinyl alcohol at a content of 20 ppm or more
as an additive,

(b) polyethylene glycol and polyvinyl alcohol are mixed to prepare a replenishment mixture thereof, and 500 mg or more of
the replenishment mixture of polyethylene glycol and polyvinyl alcohol is added to the electrolyte per 1 kg of deposited copper
in the electrolyte, and thereby, a content of the mixture of polyethylene glycol and polyvinyl alcohol in the electrolyte
is maintained in a range of 20 ppm or more while the electrolysis is performed, and

(c) when a molecular weight of the polyethylene glycol is given as Z and a current density during the electrolysis is given
as X (A/dm2), the electrolysis is performed under conditions that fulfill the following relational expressions,

1000?Z?2000

1.2?(Z?1000)×0.0008?X?2.2?(Z?1000)×0.001.

US Pat. No. 9,551,190

EXCAVATION TOOL

MITSUBISHI MATERIALS CORP...

1. An excavation tool comprising:
a tool body centered on an axis line; and
an excavation tip which is attached to an embedding hole drilled in a distal end portion of the tool body,
wherein the tool body is centered on the axis line and is moved forward to a distal end side in a direction of the axis line,
the excavation tip has an embedding portion, the embedding portion of the excavation tip having an outer cylindrical shape
about a central axis, the embedding portion is formed integrally with a cutting edge portion of a distal end side in a direction
of the central axis,

the embedding portion is inserted into the embedding hole and the cutting edge portion is protruded from the embedding hole,
and

at least one excavation tip serves as a rotary excavation tip which is rotatable about the central axis of the embedding portion
during excavation, is locked so as not to slip toward the distal end side in the direction of the central axis and is attached
to the embedding hole,

between an outer peripheral surface of the embedding portion of the rotary excavation tip and an inner peripheral surface
of the embedding hole to which the rotary excavation tip is attached, a first surface has a concave groove going around the
central axis and a second surface has a convex portion accommodated in the concave groove, and

the convex portion is formed integrally with the second surface.
US Pat. No. 9,123,360

OXIDE SPUTTERING TARGET AND PROTECTIVE FILM FOR OPTICAL RECORDING MEDIUM

MITSUBISHI MATERIALS CORP...

1. A oxide sputtering target made of an oxide sintered body comprising:
with respect to a total content amount of metal compositions, 0.15 at % or more of one or more of Al, Ga, and In as a total
content amount;

7 at % or more of Sn; and
the balance Zn and inevitable impurities,
wherein a total content amount of Al, Ga, In, and Sn is 36 at % or less,
wherein the sputtering target comprises ZnO phase and Zn2SnO4 phase, and

wherein a ratio of a peak near 27° corresponding to SnO2 to a peak near 34° corresponding to Zn2SnO4 is 1/100 or less.

US Pat. No. 9,079,264

CERAMIC SUBSTRATE, METHOD OF MANUFACTURING CERAMIC SUBSTRATE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

6. A method of manufacturing a power module substrate, comprising: radiating energy light with an energy that is greater than
or equal to a second harmonic wave of a YAG laser to the surface of a ceramic base material including silicon to form scribe
lines in the surface of the ceramic base material; performing a surface treatment selected from a group consisting of a blast
process of blowing powder, a plasma etching using gas including fluoride ions, and a reactive ion etching using gas including
fluoride ions on the ceramic base material having the scribe lines formed therein; dividing the ceramic base material along
the scribe lines to form a ceramic substrate; and bonding metal members to the ceramic substrate, wherein a concentration
of a silicon oxide and a silicon composite oxide in the surface of the ceramic base material having the scribe lines formed
therein is less than or equal to 2.7 Atom %.

US Pat. No. 9,799,821

SILICON SUBSTRATE HAVING FERROELECTRIC FILM ATTACHED THERETO

MITSUBISHI MATERIALS CORP...

1. A ferroelectric film-attached silicon substrate which comprises a PZT type ferroelectric film formed on a substrate body
by a sol-gel process, a residual stress of which being ?14 MPa to ?31 MPa, and the ferroelectric film being crystal oriented
in a (100) plane, and an average particle diameter of the crystal particles constituting the ferroelectric film being 500
nm to 700 nm.

US Pat. No. 9,723,707

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEATSINK, POWER MODULE, AND METHOD FOR PRODUCING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A power module substrate comprising:
a ceramic substrate,
and a circuit layer formed on a surface of the ceramic substrate,
wherein the circuit layer includes an aluminum layer arranged on the surface of the ceramic substrate and,
a copper layer laminated on one side of the aluminum layer by solid phase diffusion bonding,
wherein a diffusion layer including Cu and Al is formed in a bonding interface between the aluminum layer and the copper layer,
wherein the diffusion layer has a structure in which a plurality of intermetallic compounds is laminated along the bonding
interface,

wherein each of the plurality of intermetallic compounds is formed in a form of a layer,
wherein the plurality of intermetallic compounds includes a ? phase, and an ?2 phase, and
wherein a layer of each phase is arranged in order of the ? phase and the ?2 phase from the aluminum layer toward the copper
layer.

US Pat. No. 9,551,485

METHOD FOR CONTROLLING NOX CONCENTRATION IN EXHAUST GAS IN COMBUSTION FACILITY USING PULVERIZED COAL

MITSUBISHI MATERIALS CORP...

1. A method for controlling an NOx concentration in an exhaust gas in a combustion facility that uses a pulverized coal as
a fuel, comprising in the following order:
measuring a reaction velocity of each of a plurality of chars represented by ki and corresponding to a plurality of types of pulverized coals;

determining a relationship between the NOx concentration in the exhaust gas and a reaction frequency factor, which is represented
by Ai, of the reaction velocity ki for the each of the chars in the plurality of chars;

blending the plurality of the types of the pulverized coal, to obtain a blended pulverized coal, wherein a blending ratio
of the plurality of the types of the pulverized coal is determined by using, as an index, a reaction frequency factor of the
char of the blended pulverized coal, which is represented by Ablend and which corresponds to a target NOx concentration or below, on the basis of the relationship;

supplying the blended pulverized coal to the combustion facility as the fuel of the combustion facility;
wherein the reaction frequency factor for the each of the plurality of the chars, Ai, is determined by:

drawing a curve of a time change of weight loss for the each of the plurality of the types of the pulverized coals under the
condition of a plurality of temperatures by using a thermal balance;

dividing inclination of a tangent of the curve by a measured partial pressure of oxygen, thereby determining the reaction
velocity of the each of the plurality of the chars, ki at the respective temperatures;

subsequently drawing an Arrhenius plot which sets (1/measurement temperature) for the horizontal axis and sets a value of
the reaction velocity of the char, ki, in the measurement temperature for the vertical axis; and

determining the reaction frequency factor for the each of the plurality of the chars, Ai, from an intercept of the vertical axis of the Arrhenius plot.

US Pat. No. 9,399,254

CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, POWDER FOR CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, METHOD FOR MANUFACTURING CLAYISH COMPOSITION FOR FORMING SINTERED SILVER ALLOY BODY, SINTERED SILVER

MITSUBISHI MATERIALS CORP...

1. A composition for forming a sintered silver-copper alloy body comprising:
a powder constituent consisting essentially of silver powder and copper oxide powder;
a binder; and
water,
wherein the copper oxide powder consists of copper (II) oxide powder (CuO) and copper (I) oxide powder (Cu2O),

the amount of the copper (II) oxide powder (CuO) is from 4 mass % to 35 mass % with respect to the amount of the powder constituent,
the total amount of the copper (II) oxide powder (CuO) and copper (I) oxide powder (Cu2O) is 54 mass % or less with respect to the amount of the powder constituent, and

the amount of silver in the silver powder is from 46 mass % to 97 mass % with respect to the amount of the entire metal elements
in the powder consistent.

US Pat. No. 9,863,035

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

MITSUBISHI MATERIALS CORP...

1. A thermistor made of a metal nitride material, the metal nitride material consisting of a metal nitride represented by
the general formula: (Ti1-vCrv)xAly(N1-wOw)z (where 0.0 wurtzite-type single phase.

US Pat. No. 9,707,321

POROUS IMPLANT MATERIAL

MITSUBISHI MATERIALS CORP...

1. A porous implant material, comprising:
a first set of metal bodies; and
a second set of porous metal bodies having a higher porosity than and bonded to the metal bodies of the first set in an alternating
manner, the metal bodies of the first and second sets bonded with each other at a bonded-boundary surface parallel to a first
direction;

wherein the implant material has a total porosity rate of 50 to 92%,
each of the porous metal bodies of the second set has a three-dimensional network formed from a continuous skeleton in which
a plurality of pores are interconnected, and in which the pores are long along the direction parallel to the bonded-boundary
surface and short along the direction orthogonal to the bonded-boundary surface,

each of the metal bodies of the first set has a porosity rate of 0.5 to 50%, substantially spherical pores that are more spherical
than the pores in the porous metal bodies of the second set, and a thickness less than a respective thickness of each of the
porous metal bodies of the second set, and

a compressive strength compressing in a direction parallel to the bonded-boundary surface is 1.4 times to 10 times a compressive
strength compressing in a direction orthogonal to the bonded-boundary surface; and

wherein the porous implant material is structurally configured for use as one of
(i) a sponge bone with a compressive strength in the direction parallel to the bonded-boundary surface of 4 to 70 MPa and
a compressive elastic modulus in the direction parallel to the bonded-boundary surface of 1 to 5 GPa, and

(ii) a cortical bone with a compressive strength of 100 to 200 MPa and a compressive elastic modulus in the direction parallel
to the bonded-boundary surface of 5 to 20 GPa.

US Pat. No. 9,625,326

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

MITSUBISHI MATERIALS CORP...

1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0 0.70?y/(x+y) ?0.98, 0.45?z?0.55, 0w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type
single phase.

US Pat. No. 9,587,881

CEMENT PRODUCTION APPARATUS

MITSUBISHI MATERIALS CORP...

1. A cement production apparatus comprising:
a plurality of cyclones vertically connected to each other in which exhaust gas generated in a cement kiln flows;
a duct provided between the upper cyclones and the lower cyclone being provided below the upper cyclones, the duct in which
the exhaust gas drained from the lower cyclone flows upward, distributing and introducing the exhaust gas to the upper cyclones;

a plurality of material-supplying pipes for supplying cement raw material provided on the duct below a distribution part among
the plurality of the upper cyclones with a same number of distribution outlets among the upper cyclones; and

connecting ports of the material-supplying pipes to the duct each provided at each of positions corresponding to swirl flows
of the exhaust gas poured into the distribution outlets.

US Pat. No. 9,589,732

PROCESS FOR PRODUCING POROUS SINTERED ALUMINUM, AND POROUS SINTERED ALUMINUM

MITSUBISHI MATERIALS CORP...

1. Porous sintered aluminum comprising:
aluminum sintered matrix in which Al—Ti compounds are dispersed and distributed,
wherein the aluminum sintered matrix is a sintered body produced from aluminum particles, and the Al—Ti compound is Al—Ti
compound grains produced by a sintering synthesis reaction between aluminum particles and titanium particles,

the Al—Ti compound grains are sintered with aluminum grains of the aluminum sintered matrix, and voids are formed between
the aluminum grains of the aluminum sintered matrix,

two different pores are included, and the two different pores include pores which are surrounded by sponge skeletons and pores
which are formed in the sponge skeleton itself, and

two or more open pores are included in the sponge skeleton itself per linear skeleton length of 100 ?m.

US Pat. No. 9,401,340

SEMICONDUCTOR DEVICE AND CERAMIC CIRCUIT SUBSTRATE, AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE

MITSUBISHI MATERIALS CORP...

1. A semiconductor device comprising:
a circuit layer composed of a conductive material; and
a semiconductor element mounted on the circuit layer,
wherein an underlayer having a porosity in the range of 5 to 42% is formed on one surface of the circuit layer, and includes
a glass layer and an Ag layer having glass particles dispersed within the Ag layer,

a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal
particles and metal oxide particles is formed on the underlayer, and

the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

US Pat. No. 9,066,433

POWER MODULE SUBSTRATE, POWER MODULE SUBSTRATE WITH HEAT SINK, POWER MODULE, AND METHOD OF MANUFACTURING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A power module substrate, the substrate comprising:
an insulating substrate; and
a circuit layer that is formed on one surface of the insulating substrate,
wherein the circuit layer is formed by bonding a first copper plate onto the one surface of the insulating substrate, and
wherein, prior to bonding, the first copper plate consists essentially of:
copper, and
either:
a total of 1 to 100 mol ppm of one or more alkaline-earth elements, transition metal elements, and rare-earth elements; or
100 to 1000 mol ppm of boron.

US Pat. No. 9,842,675

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR

MITSUBISHI MATERIALS CORP...

1. A metal nitride material for a thermistor, consisting of a metal nitride represented by the general formula: VxAly(N1-wOw)z (where 0.70?y/(x+y)?0.98, 0.45?z ?0.55, 0 single phase.

US Pat. No. 9,748,080

CU—GA ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A Cu—Ga alloy sputtering target, wherein
the Cu—Ga alloy sputtering target is a sintered body which has a composition with 29.5 atom % to 43.0 atom % of Ga and a balance
of Cu, and

a Cu—Ga alloy crystal particle in the sintered body has a structure in which ? phase particles are dispersed in ?1-phase crystal particle.

US Pat. No. 9,707,628

ROUGHING END MILL

MITSUBISHI MATERIALS CORP...

1. A roughing end mill comprising:
a plurality of cutting edges that are undulated in wave forms in a direction of an axis and are formed on an outer periphery
of a front end portion of an end mill body rotating about the axis so that phases of the wave forms are displaced from each
other in a path of rotation about the axis,

wherein flank faces of the cutting edges are covered with a coating film,
rough surface regions and smooth surface regions are alternately formed on the surface of at least portions of the coating
film, which are close to the cutting edges, in the direction of the axis, and

the number of fine particles or fine protrusions, which have a size in the range of 0.3 ?m to 5.0 ?m and protrude from the
rough surface region, is larger than the number of fine particles or fine protrusions, which have a size in the range of 0.3
?m to 5.0 ?m and protrude from the smooth surface region.

US Pat. No. 9,653,764

METHOD AND APPARATUS FOR RECOVERING SODIUM FROM SODIUM-SULFUR BATTERY

MITSUBISHI MATERIALS CORP...

1. A method for recovering sodium from a sodium-sulfur battery housing sodium and sulfur in a battery container, the method
comprising:
a nozzle insertion step of inserting a nozzle to which a treatment liquid is supplied from a treatment liquid supply into
the battery container;

a reaction step of injecting a treatment liquid from the nozzle toward the sodium housed in a sodium-housing in the battery
container, and causing the sodium to react with the treatment liquid so as to generate a reaction liquid; and

a circulation step of collecting the reaction liquid, adjusting the concentration and liquid temperature of the collected
reaction liquid so as to generate the treatment liquid, and returning the generated treatment liquid to the treatment liquid
supply; wherein

in the reaction step, while the entire amount of the sodium is reacted with the treatment liquid, the treatment liquid is
continuously injected toward the sodium.

US Pat. No. 9,321,650

CARBON NANOFIBER, DISPERSION LIQUID AND COMPOSITION THEREOF

MITSUBISHI MATERIALS CORP...

1. A carbon nanofiber having a content of oxygen generated by an oxidization treatment is in a range of 8% by mass to 20%
by mass,
wherein the content of oxygen is controlled in a range of 8% by mass to 20% by mass by carrying out the oxidization treatment
at 100° C. or higher using an mixed acid of nitric acid and sulfuric acid in which a nitric acid concentration ratio is in
a range of 10% by mass to 30% by mass, and

the carbon nanofiber used in the oxidization treatment has 98% or more of a color transmittance in toluene.

US Pat. No. 9,833,845

END MILL WITH COOLANT HOLES

MITSUBISHI MATERIALS CORP...

1. An end mill with coolant holes, comprising:
a tip portion configured to rotate around an axis and to serve as a cutting blade part;
a plurality of chip discharge grooves that are twisted to a backward side in a rotational direction of the end mill toward
a rear end side in a direction of the axis and are formed at predetermined intervals in a circumferential direction at an
outer periphery of the cutting blade part,

peripheral blades that are respectively formed at outer-peripheral-side ridge portions of wall faces of the chip discharge
grooves facing the rotational direction of the end mill;

gashes that are formed at tip portions of the chip discharge grooves; and
bottom blades extending from tips of the peripheral blades toward the axis, said bottom blades being formed at intersecting
ridgeline portions between wall faces of the gashes that face the rotational direction of the end mill and tip flank faces
of the end mill body,

wherein at least one bottom blade among the bottom blades serves as a long bottom blade that is longer than the bottom blade
adjacently provided at a forward side in the rotational direction of the end mill and the bottom blade adjacently provided
at a backward side in the rotational direction of the end mill,

wherein each of the coolant holes is formed between the chip discharge grooves, which are adjacent to each other in the circumferential
direction of the end mill body,

wherein a first coolant hole passes through a portion between a chip discharge groove connected to a gash along which the
long bottom blade is formed and another chip discharge groove adjacently provided at a backward side of the chip discharge
groove in the rotational direction of the end mill, said first coolant hole being open to a tip flank face connected to a
backward side of the long bottom blade in the rotational direction of the end mill, and

wherein a second coolant hole passes through a portion between the chip discharge groove connected to the gash along which
the long bottom blade is formed, and second chip discharge groove adjacently provided at a forward side of the chip discharge
groove in the rotational direction of the end mill, said second coolant hole being open to the gash along which the long bottom
blade is formed.

US Pat. No. 9,724,762

SURFACE-COATED CUTTING TOOL WITH HARD COATING LAYER EXHIBITING EXCELLENT CHIPPING RESISTANCE AND WEAR RESISTANCE

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool comprising;
a tool substrate constituted of a tungsten carbide-based cemented carbide;
a lower layer consisting of a titanium compound layer; and
an upper layer consisting of an aluminum oxide layer, wherein
the lower layer is deposited on a surface of the tool substrate,
the lower and upper layers are formed as hard coating layers,
the upper layer is deposited directly on a surface of the lower layer, and
the upper layer has;
1.8 or more of a (006) plane texture coefficient TC(006),
0.5 to 2.0 of a ratio I(104)/I(110) of a peak intensity I(104) of an (104) plane to a peak intensity I(110) of an (110) plane,
and

100 MPa or less of an absolute value of a residual stress.

US Pat. No. 9,555,489

CUTTING INSERT AND INDEXABLE CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A cutting insert capable of being detachably attached to an insert mounting seat of an indexable cutting tool, the cutting
insert comprising:
an insert body having a polygonal plate shape,
wherein rake faces are formed on polygonal surfaces of the insert body, and flank faces are formed on lateral faces of the
insert body arranged around the polygonal surfaces,

main cutting edges are formed on side ridges of the polygonal surfaces at intersecting ridgelines between the rake faces and
the flank faces,

each main cutting edge extends between two corners adjacent to each other in a circumferential direction of the polygonal
surface,

when seen from a direction opposing the rake face, one end portion of the each main cutting edge that stretches to one corner
of the two corners has a convexly curved shape, and the other end portion of the main cutting edge that stretches to the other
corner of the two corners has a concavely curved shape, and

a clearance angle of the main cutting edge is made larger on a positive angle side at the one end portion of the main cutting
edge than at the other end portion of the main cutting edge.

US Pat. No. 9,543,128

SPUTTERING TARGET FOR FORMING PROTECTIVE FILM AND LAMINATED WIRING FILM

MITSUBISHI MATERIALS CORP...

1. A backing plate-attached target for forming protective film on one surface or both surfaces of a Cu wiring film,
the backing plate-attached target comprising a backing plate and a sputtering target that is soldered by using indium on the
backing plate,

the sputtering target consisting of:
8.0% by mass to 11.0% by mass of Al;
3.0% by mass to 5.0% by mass of Fe;
0.5% by mass to 2.0% by mass of Ni; and
0.5% by mass to 2.0% by mass of Mn
with a remainder of Cu and inevitable impurities.

US Pat. No. 9,901,991

DRILL

MITSUBISHI MATERIALS CORP...

1. A drill in which a cut debris discharge groove is formed at an outer periphery of a front end section of a drill body rotated
about an axis and a cutting edge is formed at a front end of the drill body,
wherein a wall surface of the cut debris discharge groove, which faces a rotational direction of the drill, is formed to have
a concave curve line shape extending in a cross-section perpendicular to the axis, the concave curve line shape extending
along a first circular arc,

wherein a leading edge is formed at the outer periphery of the wall surface,
wherein a bottom surface of the cut debris discharge groove, which continues to the wall surface and which faces an outer
peripheral side of the drill body, is formed to have a concave curve line shape in the cross-section perpendicular to the
axis, the concave curve line shape extending along a second circular arc to be tangent with a core diameter circle at the
front end section of the drill body,

wherein the first circular arc has a greater radius than the second circular arc and is in contact with the second circular
arc at a position closer to the leading edge than the point of contact between the second circular arc and the core diameter
circle,

wherein in the cross-section perpendicular to the axis, the position, at which the first circular arc is in contact with the
second circular arc, is located in front of a line segment joining the leading edge and the axis in the rotational direction,
and

wherein the cutting edge is formed with
a main cutting edge extending from the outer peripheral end of the cutting edge to the inner peripheral side thereof and having
a substantially linear shape as seen from the front end side in the direction of the axis and a thinning edge that continues
to the inner periphery of the main cutting edge.

US Pat. No. 9,821,383

BALL END MILL

MITSUBISHI MATERIALS CORP...

1. A ball end mill comprising:
an even number of cutting edges which are formed at intervals in a circumferential direction on a front end portion of an
end mill body rotated about an axis and have rotation trajectories around the axis that form a hemispherical shape having
a center on the axis,

wherein the even number of cutting edges are composed of long cutting edges and short cutting edges,
the long cutting edges are provided in the circumferential direction with one short cutting edge interposed therebetween,
and intersect with each other on the axis at a front tip of the end mill body,

the short cutting edges are provided in the circumferential direction with one long cutting edge interposed therebetween,
and include inner peripheral ends at positions distant from the axis,

a gash of each long cutting edge and a gash of each short cutting edge connect with each other on a front end side of the
end mill body, said short cutting edges being adjacent to the long cutting edges in an end mill rotation direction, and

the gash of each long cutting edge on the front end side is wider than the gash of each short cutting edge in the circumferential
direction of the end mill body.

US Pat. No. 9,511,427

CUTTING INSERT AND INDEXABLE INSERT-TYPE CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A cutting insert which is attached in a detachable manner to an insert seat of an indexable insert-type cutting tool, the
cutting insert comprises:
a polygonal plate-like insert main body having a pair of polygonal faces and a plurality of side faces arranged at the periphery
thereof,

wherein a cutting edge is formed on a side ridge portion of the polygonal face, and the insert main body is formed in the
shape of having front-back inversion symmetry with respect to the pair of polygonal faces,

of the pair of polygonal faces, when one polygonal face is used as a rake face, the other polygonal face is used as a seating
face which is seated on a base of the insert seat,

a pair of contact surfaces disposed along each of a pair of imaginary flat faces of the cutting insert are formed on each
of the pair of polygonal faces,

the pair of contact surfaces are allowed to be individually in contact with a pair of contacted surfaces formed on the base
of the insert seat, when the polygonal face on which the pair of contact surfaces are formed is used as the seating face,

an attachment hole is formed on the insert main body at the center of an insert central line which connects centers of the
pair of polygonal faces,

the pair of imaginary flat faces of the cutting insert on which the pair of contact surfaces are disposed include one imaginary
straight line of the cutting insert and are also arranged in a direction intersecting with each other in an X-letter shape,
with setting the imaginary straight line of the cutting insert as an intersection point, when seen in a direction along the
imaginary straight line of the cutting insert, the imaginary straight line of the cutting insert extending on the polygonal
face on which the pair of contact surfaces are formed and being orthogonal to the insert central line,

and
of the side faces of the insert main body, on one of the side faces which faces one direction of two directions at which the
imaginary straight line of the cutting insert of the pair of contact surfaces extends, there is formed a contact portion which
is allowed to be in contact with a contacted portion formed on one wall face rising to the base of the insert seat.

US Pat. No. 9,782,830

SURFACE-COATED CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A surface-coated cutting tool, comprising:
a tool body made of tungsten carbide-based cemented carbide or titanium carbonitride-based cermet; and
a hard coating layer which is vapor-deposited on a surface of the tool body,
wherein the hard coating layer includes:
(a) a lower layer which is a Ti compound layer including at least one of the group consisting of a Ti carbide layer, a Ti
nitride layer, a Ti carbonitride layer, a Ti oxycarbide layer, and a Ti oxycarbonitride layer, and having an average total
layer thickness of 3 to 20 ?m;

(b) an intermediate layer which is an Al2O3 layer having an average layer thickness of 0.5 to 5 ?m and having an ?-crystal structure in a chemically vapor-deposited state;
and

(c) an upper layer which is a Zr-containing Al2O3 layer having an average layer thickness of 2 to 15 ?m and having an ?-crystal structure in a chemically vapor-deposited state,

(d) an outermost layer of the lower layer is the Ti carbonitride layer having a layer thickness of 500 nm or more, where oxygen
is contained only in a region having a depth of 500 nm or less from an interface between the Ti carbonitride layer and the
intermediate layer in a layer thickness direction of the Ti carbonitride layer, and an average amount of oxygen contained
in the region is 0.5 to 3 at % of a total amount of Ti, C, N, and O contained in the region,

(e) in an inclination angle frequency distribution graph for Al2O3 grains of the intermediate layer, the highest peak exists in an inclination angle division in a range of 0 to 10° and the
ratio of the sum of frequencies in the range of 0 to 10° is 50 to 70% to the total frequencies in the inclination angle frequency
distribution graph, the inclination angle frequency distribution graph being obtained by utilizing a field-emission-type scanning
electron microscope, irradiating electron beams to individual crystal grains with a hexagonal crystal lattice in a measurement
range of a polished cross-section of the intermediate layer, measuring inclination angles between the normal line to the surface
of the tool body and the normal lines to (0001) planes as a crystal plane of the crystal grains in a range of 0 to 45°, dividing
the measured inclination angles belonging to a range of 0 to 45° every pitch of 0.25°, and counting the frequencies in each
division,

(f) in an inclination angle frequency distribution graph for Al2O3 grains of an entirety of the intermediate layer and the upper layer, the highest peak exists in an inclination angle division
in a range of 0 to 10° and ratio of the sum of frequencies in the range of 0 to 10° is 75% or more to the total frequencies
in the inclination angle frequency distribution graph, the inclination angle frequency distribution graph being obtained by
utilizing a field-emission-type scanning electron microscope, irradiating electron beams to individual crystal grains with
a hexagonal crystal lattice in a measurement range of a polished cross-section of the intermediate layer and upper layer,
measuring inclination angles between the normal line to the surface of the tool body and the normal lines to (0001) planes
as a crystal plane of the crystal grains in a range of 0 to 45°, dividing the measured inclination angles belonging to a range
of 0 to 45° every pitch of 0.25°, and counting the frequencies in each division, and

(g) regarding the Al2O3 grains of the intermediate layer and the upper layer, the insides of the crystal grains of which area ratio is 70% or more
to the crystal grains constituting both of the intermediate layer and the upper layer, are divided by at least one crystal
lattice interface with a constituent atom-sharing lattice point type expressed by ?3, when electron beams are irradiated to
the individual crystal grains in a measurement range of the polished cross-section of the intermediate layer and the upper
layer by utilizing a field-emission-type scanning electron microscope and an electron backscatter diffraction-imaging device
to measure angles between a normal line to each of crystal lattice faces of hexagonal crystal lattices and the normal line
to the surface of the tool body, a crystal orientation relationship between the adjacent crystal lattices is calculated based
on the measurement result, and a distribution of lattice points (constituent atom-sharing lattice points) where each of constituent
atoms of a crystal lattice interface shares one constituent atom between the crystal lattices is calculated, and when ?N+1
represents the constituent atom-sharing lattice point type in which there are N lattice points sharing no constituent atoms
between the constituent atom-sharing lattice points (here, N is an even number of 2 or higher in a crystal structure of a
corundum-type hexagonal close-packing crystal, and N does not include 4, 8, 14, 24, and 26 when the upper limit of N is set
to 28 in view of distribution frequency).

US Pat. No. 9,745,201

SYNTHETIC AMORPHOUS SILICA POWDER AND PROCESS FOR MANUFACTURING SAME

MITSUBISHI MATERIALS CORP...

1. A synthetic amorphous silica powder obtained by subjecting silica as a raw material to granulation and firing,
wherein a particle diameter Dv50 at a cumulative frequency of 50% in a volume-based particle size distribution is 72 ?m or more and 509 ?m or less,

a cumulative frequency of particles having volume-based diameters of 45 ?m or less is 1.8% or less,
a value obtained by dividing a difference between a particle diameter Dv90 at a cumulative frequency of 90% in a volume-based particle size distribution and a particle diameter Dv10 at a cumulative frequency of 10% in a volume-based particle size distribution by a particle diameter Dv50 at a cumulative frequency of 50% in a volume-based particle size distribution is 0.79 or more and 1.40 or less,

FNL/FNS which is a ratio of a frequency FNL of a frequency peak in a number particle size distribution existing at a neighbor of the particle diameter Dv50 at a cumulative frequency of 50% in a volume-based particle size distribution, and a frequency FNS of a frequency peak in a number-based particle size distribution existing at a particle diameter of 30 ?m or less is 0.3 or
more, and

a bulk density is 0.75 g/cm3 or more and 1.5 g/cm3 or less.

US Pat. No. 9,748,079

CYLINDRICAL SPUTTERING TARGET MATERIAL

MITSUBISHI MATERIALS CORP...

1. A cylindrical sputtering target material formed of copper or a copper alloy,
wherein, when special grain boundary length ratios L?N /LN are defined by a unit total grain boundary length LN which is obtained by using an EBSD method while measuring a total grain boundary length L of crystal grain boundaries in a
measurement range and converting the total grain boundary length L into a value per unit area of 1 mm2 and a unit total special grain boundary length L?N which is obtained by using the EBSD method while measuring a total special grain boundary length La of special grain boundaries
in a measurement range and converting the total special grain boundary length L? into a value per unit area of 1 mm2;

the special grain boundary length ratios L?N /LN are measured at 12 points of the target including 4 points which are located away in an axis direction from an edge surface
of one side of the target material by 20 mm and are located at intervals of 90° in a circumferential direction, 4 points which
are located at a center portion in the axis direction and are located at intervals of 90° in the circumferential direction,
and 4 points which are located away in the axis direction from an edge surface of the other side of the target material by
20 mm and are located at intervals of 90° in the circumferential direction;

an average value of the special grain boundary length ratios L?N/LN is set to be equal to or greater than 0.5, and each value of special grain boundary length ratios L?N /LN is in a range of ±20% with respect to the average value; and

the cylindrical sputtering target material comprises 90 mass % or more of Cu, a total amount of Si and C which are impurity
elements is equal to or greater than 0.01 mass ppm and equal to or smaller than 10 mass ppm and an amount of O is equal to
or greater than 0.5 mass ppm and equal to or smaller than 50 mass ppm.

US Pat. No. 9,649,701

CUTTING INSERT AND INDEXABLE INSERT-TYPE CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A cutting insert which is attached in a detachable manner to an insert seat of an indexable insert-type cutting tool, the
cutting insert comprising:
a polygonal plate-like insert main body having a pair of polygonal faces and a plurality of side faces arranged on the periphery
of the pair of polygonal faces,

wherein of the pair of polygonal faces, one polygonal face is used as a rake face and the other polygonal face is used as
a seating face seated on a base of the insert seat;

a cutting edge is formed on each of a pair of side ridge portions of at least one of the side faces, the pair of side ridge
portions being a portion intersecting the side face and the pair of polygonal faces;

the insert main body is formed in the shape of having front-back inversion symmetry which is 180° rotationally symmetrical
with respect to a line of symmetry passing through the center of at least one of the side faces;

on at least one of the side faces, a flank face adjacent to the cutting edge is formed on the side face in the vicinity of
each of the pair of polygonal faces, when the pair of polygonal faces are used as rake faces;

each of the flank faces is formed in the shape of a twisted face in which a flank angle with respect to the cutting edge gradually
increases in a positive angle side while each of the flank faces becoming close to a second corner portion from a first corner
portion, the first corner portion and the second corner portion being alternately located in a circumferential direction of
the pair of polygonal faces in at least one of the side faces; and

the pair of side ridge portions of the side face on which the cutting edge is formed intersect each other in such a manner
that the second corner portion of one side ridge portion protrudes outside the other side ridge portion, in a top view of
the cutting insert.

US Pat. No. 9,867,711

VERTEBRAL BODY SPACER

MITSUBISHI MATERIALS CORP...

1. A vertebral body spacer to be used by being inserted between vertebral bodies, comprising;
a pair of block bodies, each block body having a pair of contact surfaces configured to contact the vertebral bodies, and
a connecting portion rotatably connecting the pair of block bodies to each other,
wherein the block body includes a frame-shaped dense part having a porosity of 10 to 40% and a porous part provided inside
the dense part, and a porosity of at least a surface of the porous part is larger than a porosity of the dense part, wherein
the porous part and the dense part of each block body are constituted of titanium or a titanium alloy as a main component
thereof,

wherein the dense part includes a first frame portion configured to contact one of the vertebral bodies and a second frame
portion configured to contact the other of the vertebral bodies,

wherein one surface of the pair of contact surfaces is constituted from the first frame portion of the dense part and the
porous part, and the other surface of the pair of contact surfaces is constituted from the second frame portion of the dense
part and the porous part, and

wherein each surface of the pair of contact surfaces constitutes a flat surface.

US Pat. No. 9,868,666

CEMENT CLINKER PRODUCTION SYSTEM

MITSUBISHI MATERIALS CORP...

1. A cement clinker production system, comprising:
a first supplying section configured to supply a fluorine source of mineralizer and a clinker raw material;
a mixing section configured to mix the supplied clinker raw material with the supplied fluorine source of the mineralizer
to obtain the mixed raw material;

a crushing section configured to crush the mixed raw material; and
an introducing section configured to introduce a sulfur source of the mineralizer, fuel and the crushed mix raw material to
the kiln to produce a clinker by burning the crushed mix raw material,

wherein
the cement clinker production system further comprises a test sample-analyzing system,
the test sample-analyzing system comprising:
a collecting section configured to collect each of the mixed raw material before the burning and the clinker after the burning;
a bead section configured to make the collected mixed raw materials into a beads mixed raw material test sample;
a first pressing section configured to make the collected mixed raw materials into a pressed mixed raw material test sample;
a second pressing section configured to make the collected clinker into a pressed clinker test sample;
a first measurement section configured to measure the amount of the fluorine of the mixed raw material from the pressed mixed
raw material test sample;

a second measurement section configured to measure the amounts of the sulfur trioxide and main components of the mixed raw
material from the beads mixed raw material test sample; and

a third measurement section configured to measure the amounts of the sulfur trioxide, the fluorine, main components and free
lime of the clinker from the pressed clinker test sample,

thereby controlling at least any one of the supply amount of the fluorine source and the sulfur source, the supply amount
of the mixed raw material, and the supply amount of the fuel based on the measured amounts by the test sample-analyzing system.

US Pat. No. 9,851,262

TEMPERATURE SENSOR

MITSUBISHI MATERIALS CORP...

1. A temperature sensor comprising:
a pair of lead frames;
a sensor portion connected to the pair of lead frames; and
an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames,
wherein the sensor portion further comprises:
an insulating film;
a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material;
a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on at least one
of the top or the bottom of the thin film thermistor portion; and

a pair of pattern electrodes that respectively have ends connected to the pair of interdigitated electrodes and other ends
connected to the pair of lead frames, and are formed as patterns on the surface of the insulating film, and

wherein the pair of lead frames is extended on both sides of the thin film thermistor portion at a certain interval in the
surface of the insulating film.

US Pat. No. 9,745,643

METHOD FOR TREATING COMBUSTIBLE MATERIAL AND INSTALLATION

MITSUBISHI MATERIALS CORP...

1. A method for treating combustible material, comprising:
providing a pipe which is opened to a molten substance surface above the molten substance surface of molten substance stored
in a furnace body for smelting nonferrous metals, wherein the pipe is a double cylinder structure containing a mixing region
from the end opening of the inner cylinder in the outer cylinder to the end opening of the outer cylinder;

blowing combustible material containing valuable metals and oxygen-enriched air onto the molten substance surface from the
pipe thereby immersing the combustible material in the molten substance, and burning and melting the combustible material
while stirring the combustible material in the molten substance; and

treating the molten substance in a post-process, and recovering the valuable metals with the smelting nonferrous metals, wherein
supplying the oxygen-enriched air through a space between the inner cylinder and the outer cylinder,
the pipe and an opening for discharging flue gas generated in the furnace body are provided on a ceiling wall of the furnace
body,

the opening is provided on the ceiling wall at a different position from the position of the pipe, and is connected to a waste
heat boiler,

a molten substance discharge port for discharging the molten substance from the furnace body is provided on a side wall of
the furnace body, and

the molten substance discharge port is provided on the side wall at a position opposite from the opening interposed therebetween
the pipe.

US Pat. No. 9,647,185

COMPOSITION FOR REFLECTION FILM FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, AND METHOD OF PRODUCING LIGHT EMITTING ELEMENT

MITSUBISHI MATERIALS CORP...

1. A method of producing a light emitting element, comprising:
forming an electro-conductive reflection film by coating a composition for the electro-conductive reflection film containing
metal nanoparticles and an additive material on a substrate by a wet-coating method, and subsequently drying the composition
for the electro-conductive reflection film at 150 to 350° C. and firing or curing the dried composition for the electro-conductive
reflection film;

disposing a light emitting layer on the electro-conductive reflection film;
disposing a transparent electro-conductive film by coating a composition for overcoat containing light transmitting binder,
transparent electro-conductive particles and transparent particles on the electro-conductive reflection film by the wet-coating
method after forming the electro-conductive reflection film and before forming the light emitting layer, and subsequently
firing or curing the composition for overcoat; and

forming an adhesion layer between the electro-conductive reflection film and the substrate, and the adhesion layer has a thickness
of 0.01 to 0.5 ?m.

US Pat. No. 9,517,514

EXCHANGEABLE HEAD CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. An exchangeable head cutting tool comprising:
a tool main body made of a hard material and having a mounting hole with concave portions in an inner peripheral surface thereof;
a connecting member made of a metal material having a lower hardness than the hard material and having a cylindrical mounting
portion; and

a diameter expanding member having a higher hardness than the connecting member, wherein
the tool main body and the connecting member are joined by inserting the cylindrical mounting portion into the mounting hole,
and by plastically deforming the mounting portion so as to expand a diameter thereof, thereby bringing an outer peripheral
surface of the mounting portion into close contact with the inner peripheral surface of the mounting hole and thus making
the outer peripheral surface of the mounting portion engage with the concave portions in such a manner that a portion of the
outer peripheral surface of the mounting portion penetrates into the concave portions due to plastic deformation,

the diameter expanding member is press-fitted into and fixed to an inner peripheral portion of the mounting portion, and
the mounting portion is plastically deformed by the diameter expanding member.

US Pat. No. 9,568,371

INFRARED SENSOR

MITSUBISHI MATERIALS CORP...

1. An infrared sensor comprising:
an insulating film;
a first heat sensitive element and a second heat sensitive element provided on one face of the insulating film so as to be
spaced apart from one another;

a first conductive wiring film and a second conductive wiring film that are formed on one surface of the insulating film and
are respectively connected to the first heat sensitive element and the second heat sensitive element;

an infrared reflecting film provided on the other face of the insulating film so as to face the second heat sensitive element;
a plurality of terminal electrodes which are provided on the same end side of the insulating film and are connected to the
corresponding first wiring film and second wiring film; and

a thermal resistance adjusting film which is provided on the other face of the insulating film, is in opposition to at least
a portion of the longer one of the first wiring film or the second wiring film in wiring distance from the terminal electrodes,
is formed of a material with greater heat dissipation than the insulating film, and adheres to the insulating film.

US Pat. No. 9,852,829

METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM THERMISTOR SENSOR

MITSUBISHI MATERIALS CORP...

1. A thermistor made of a metal nitride material, the metal nitride material consisting of a metal nitride represented by
the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0?w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type
single phase.

US Pat. No. 9,707,320

POROUS IMPLANT MATERIAL

MITSUBISHI MATERIALS CORP...

1. A porous implant material for sponge bone and cortical bone, comprising:
a first set of porous metal bodies; and
a second set of porous metal bodies having a higher porosity than and bonded to the metal bodies of the first set in an alternating
manner, the metal bodies of the first and second sets bonded with each other at bonded-boundary surfaces parallel to a first
direction, wherein

each of the porous metal bodies has a three-dimensional network structure formed from a continuous skeleton in which a plurality
of pores are interconnected so as to have a porosity rate different from another porous metal body,

the pores formed in the second set of the porous metal bodies have flat shapes which are long along a direction parallel to
the bonded-boundary surface and short along a direction orthogonal to the bonded-boundary surface, a length along the bonded-boundary
surface is 1.2 times to 5 times a length orthogonal to the bonded-boundary surface in the pores of the second set,

the pores formed in the porous metal bodies of the first set are substantially spherical and are more spherical than the pores
formed in the second set of porous metal bodies,

an entire porosity rate of the implant material is 50% to 92%, and
a compressive strength compressing in the direction parallel to the bonded-boundary surface is 1.4 times to 5 times of a compressive
strength compressing in the direction orthogonal to the bonded-boundary direction, and

the compressive strength in the direction parallel to the bonded-boundary surface is 4 to 70 MPa where used as a sponge bone,
or 100 to 200 MPa where used as a cortical bone, and

a compressive elastic modulus in the direction parallel to the bonded-boundary surface is 1 to 5 GPa where used as the sponge
bone, or 5 to 20 GPa where used as the cortical bone.

US Pat. No. 9,644,113

COMPOSITION FOR FORMING A THIN LAYER WITH LOW REFRACTIVE INDEX, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF A THIN LAYER WITH LOW REFRACTIVE INDEX

MITSUBISHI MATERIALS CORP...

1. A low refractive index film-forming composition comprising a hydrolysate of a silicon alkoxide and a silica-sol, wherein
the silica-sol comprises silica particles having an average particle size within a range of 37 nm to 50 nm, and wherein the
composition is prepared by:
(1) generating a hydrolysate of (A) a silicon alkoxide by:
(i) mixing (A) a silicon alkoxide of Chemical Formula (1):
Si(OR)4  (1)

wherein R is an alkyl group having 1 to 5 carbon atom,
with (F) a fluoroalkyl group-containing silicon alkoxide of Chemical Formula (2):
CF2(CF2)nCH2CH2Si(OR1)3  (2)

wherein R1 is an alkyl group having 1 to 5 carbon atoms, and n is an integer from 0 to 8,

in a mass ratio of 1:0.6 to 1.6 (A:F), and
(ii) mixing the (A) silicon alkoxide and the (F) fluoroalkyl group-containing silicon alkoxide with:
(B) water in a proportion of 0.5 parts by mass to 2.0 parts by mass,
(C) an inorganic acid or an organic acid in a proportion of 0.005 parts by mass to 0.5 parts by mass, and
(D) an organic solvent in a proportion of 1.0 part by mass to 5.0 parts by mass based on 1 part by mass of the (A) silicon
alkoxide and (F), wherein the organic solvent is an alcohol, a glycol ether, or a glycol ether acetate,

to form a hydrolysate of the silicon alkoxide,
and (2) mixing the hydrolysate of the silicon alkoxide with (E) a silica sol,wherein the (E) silica sol is obtained by dispersing fumed silica particles having an average particle size within a range
of 37 nm to 50 nm and a specific surface area (BET value) within a range of 50 m2/g to 400 m2/g in a liquid medium, and wherein the SiO2 in the (E) silica sol is 1 part by mass to 99 parts by mass of the (E) silica sol when a proportion of SiO2 in the hydrolysate is regarded as being 1 part by mass.

US Pat. No. 9,662,711

CUTTING TOOL MADE OF CUBIC BORON NITRIDE-BASED SINTERED MATERIAL

MITSUBISHI MATERIALS CORP...

1. A cutting tool made of a cubic boron nitride-based sintered material comprising:
a cutting tool body that is a cubic boron nitride-based material containing at least cubic boron nitride particles as a hard
phase component, wherein

each of the cubic boron nitride particles comprises an Al2O3 layer with an average layer thickness of 1.0-10 nm on a surface of the each of the cubic boron nitride particles, a rift with
an average rift formation ratio of 0.02-0.20 being formed in the Al2O3 layer, and

the cubic boron nitride-based sintered material comprises a binding phase containing at least one selected from a group consisting
of: titanium nitride; titanium carbide; titanium carbonitride; titanium boride; aluminum nitride; aluminum oxide; inevitable
products; and mutual solid solution thereof, around the each of cubic boron nitride particles.

US Pat. No. 9,587,299

COPPER ALLOY FOR ELECTRONIC EQUIPMENT, METHOD FOR PRODUCING COPPER ALLOY FOR ELECTRONIC EQUIPMENT, ROLLED COPPER ALLOY MATERIAL FOR ELECTRONIC EQUIPMENT, AND PART FOR ELECTRONIC EQUIPMENT

MITSUBISHI MATERIALS CORP...

1. A rolled copper alloy material for electronic devices, consisting of:
a binary alloy of Cu and Mg, wherein
the binary alloy is a Cu—Mg solid solution alloy supersaturated with Mg,
the binary alloy consists of Mg at a content of 3.3 at % or more and 6.9 at % or less, and a remainder of Cu and unavoidable
impurities,

an amount of Zn as an unavoidable impurity is less than 0.01 mass %,
a total amount of the unavoidable impurities is in a range of 0.3 mass % or less,
the rolled copper alloy material is a sheet or a strip,
the binary alloy has a measured value of electrical conductivity, ?, in a range of 31.2-44.1% IACS, wherein the measured value
of electrical conductivity is less than or equal to an upper limit of electrical conductivity, in %, calculated by the formulaic
expression, {1.7241/(?0.0347×X2+0.6569×X+1.7)}×100, wherein X is the content of the Mg in the binary alloy;

a stress relaxation rate is in a range of 50% or less after heating at 150° C. for 1,000 hours, and
a 0.2% proof stress ?0.2 in a direction parallel to a rolling direction is in a range of 400 MPa or more.

US Pat. No. 9,579,739

MANUFACTURING METHOD OF POWER-MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A manufacturing method of power-module substrate wherein a plurality of copper-circuit plates are bonded at intervals on
a ceramic plate having an area wherein ceramic substrates can be formed abreast, and then the ceramic plate is divided between
the copper-circuit plates so as to manufacture the power-module substrates, comprising:
a laminating step of forming bonding-material layers of active-metal brazing material having same shapes as outer shapes of
the copper-circuit plates on one of the ceramic plate or the plurality of copper-circuit plates, spreading temporal-stick
material including polyethylene glycol as a major ingredient in a melted state by heating to a temperature at which polyethylene
glycol is melted on the other of the ceramic plate or the plurality of copper-circuit plates, and temporary sticking the bonding-material
layers and the copper-circuit plates in a state of laminating with positioning on the ceramic plate by cooling the temporal-stick
material to a temperature at which polyethylene glycol becomes solid; and

a bonding step of bonding the ceramic plate and the copper-circuit plates by pressurizing and heating a laminated assembly
thereof in a laminating direction.

US Pat. No. 9,878,915

SILICON MEMBER FOR SEMICONDUCTOR APPARATUS AND METHOD OF PRODUCING THE SAME

MITSUBISHI MATERIALS CORP...

1. A silicon member for a semiconductor apparatus comprising a plate body,
wherein
the silicon member is fabricated from a columnar pseudo-single-crystalline silicon ingot obtained by growing a single-crystal
from each of a plurality of seed crystals by:

placing the plurality of seed crystals that are made of a single-crystalline silicon plate at an inner circumferential part
on a bottom part of a crucible;

unidirectionally solidifying a molten silicon in the crucible; and
cutting the solidified silicon horizontally to obtain the plate body,
the plate body consists of: a single-crystalline region made of the single-crystal corresponding to one of the plurality of
seed crystals in the central; and a non-single-crystalline region made of columnar crystals in a peripheral part,

an area ratio of the single-crystalline region to an area of a top surface of the plate body is 0.35 to 0.54,
a crystal grain boundary density P, which is defined by a formula P=LS/A, is 0.1 or more and 0.24 or less in the silicon plate,
LS being a total length of grain boundaries of crystal grains on a cross section and A being an area of the cross section,
and

multiple through-holes are formed in the single crystal regions of the silicon member.

US Pat. No. 9,837,363

POWER-MODULE SUBSTRATE UNIT AND POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power-module substrate unit comprising:
a ceramic substrate layer;
a circuit layer structured from a plurality of small circuit layers joined on one surface of the ceramic substrate layer;
a metal layer joined on other surface of the ceramic substrate layer; and
one radiation plate joined on the metal layer, wherein
each of the small circuit layers has a layered structure comprising a first aluminum layer joined on the one surface of the
ceramic substrate layer and a first copper layer joined on the first aluminum layer by solid diffusion bonding;

the metal layer is made from a same material as that of the first aluminum layer;
the radiation plate is made from copper or copper alloy and joined on the metal layer by solid diffusion bonding; and
a ratio (t1×A1×?1)/(t2×A2×?2) is not smaller than 0.80 and not larger than 1.20: where a thickness of the first copper layer is t1 (mm); a bonding area of the first copper layer is A1 (mm2); an yield stress of the first copper layer is ?1 (N/mm2); a thickness of the radiation plate at a bonding position to the metal layer is t2 (mm); a bonding area of the radiation plate is A2 (mm2); and an yield stress of the radiation plate is ?2 (N/mm2).

US Pat. No. 9,714,196

METHOD FOR CONTROLLING NOX CONCENTRATION IN EXHAUST GAS IN COMBUSTION FACILITY USING PULVERIZED COAL

MITSUBISHI MATERIALS CORP...

1. A method for controlling an NOx concentration in an exhaust gas in a combustion facility that uses a pulverized coal as
a fuel, comprising, in the following order:
measuring a reaction velocity of each of a plurality of chars represented by ki and corresponding to a plurality of types of pulverized coals;

determining a relationship between the NOx concentration in the exhaust gas and the reaction velocity ki for the each of the chars in the plurality of chars;

blending the plurality of the types of the pulverized coal, to obtain a blended pulverized coal, wherein a blending ratio
of the plurality of the types of the pulverized coal is determined by using, as an index, a reaction velocity of the char
of the blended pulverized coal, which is represented by kblend and which corresponds to a target NOx concentration or below, on the basis of the relationship; and

supplying the blended pulverized coal to the combustion facility as the fuel of the combustion facility wherein the reaction
velocity of the each of the plurality of the chars, ki, is determined by: drawing a curve of a time change of weight loss for the each of the plurality of the types of the pulverized
coals under the condition of a plurality of temperatures by using a thermal balance; and dividing inclination of a tangent
of the curve by a measured partial pressure of oxygen, thereby determining the reaction velocity of the each of the plurality
of the chars, ki at the respective temperatures.

US Pat. No. 9,580,810

DISPERSION OF METAL NANOPARTICLES, METHOD FOR PRODUCING THE SAME, AND METHOD FOR SYNTHESIZING METAL NANOPARTICLES

Mitsubishi Materials Corp...

1. A method for synthesizing metal nanoparticles, comprising the steps of:
preparing an aqueous metal salt solution (A) by dissolving a metal salt, said aqueous metal salt solution (A) consisting essentially
of the metal salt and a solvent;

preparing an aqueous carboxylic acid solution (B) by dissolving one type or two or more types of compounds selected from the
group consisting of citric acid, maleic acid and salts thereof;

preparing an aqueous reducing agent solution (C) by dissolving one type or two or more types of compounds selected from the
group consisting of oxalic acid and salts thereof;

mixing the aqueous carboxylic acid solution (B) with the aqueous metal salt solution (A) so as to obtain a suspension of a
carboxylic acid salt in which poorly-soluble carboxylic acid salt precipitates; and

forming metal nanoparticles by adding and mixing the aqueous reducing agent solution (C) with the suspension of the carboxylic
acid salt,

wherein the aqueous solutions (A), (B), and (C) are separately prepared,
metal elements contained in the metal salt comprise 75% by mass or more of silver, and
the mixing with the aqueous reducing agent solution is carried out by stirring at a temperature of 25 to 95° C.

US Pat. No. 9,843,077

METHOD FOR PROCESSING FLUORINE-CONTAINING ELECTROLYTE SOLUTION

MITSUBISHI MATERIALS CORP...

1. A method for processing a fluorine-containing electrolyte solution including a volatile fluorine compound and a volatile
organic solvent, the method comprising:
a gasification step of gasifying volatile components included in the electrolyte solution by heating the electrolyte solution
under reduced pressure which is lower than atmospheric pressure;

a fluorine immobilization step of immobilizing a fluorine compound included in gas of gasified volatile components as a calcium
fluoride by allowing the fluorine compound to be reacted with a calcium compound; and

an organic solvent recovery step of recovering the organic solvent in the gas,
wherein, in the gasification step,
water or an aqueous mineral acid solution is added to the electrolyte solution, and then
the electrolyte solution is heated under the reduced pressure, and thereby,
the organic solvent in the electrolyte solution is gasified,
lithium hexafluorophosphate in the electrolyte solution is reacted with water and is hydrolyzed to phosphoric acid and hydrogen
fluoride, and

phosphoric acid is remained in a solution and hydrogen fluoride is gasified.
US Pat. No. 9,605,159

LOW REFRACTIVE INDEX FILM-FORMING COMPOSITION AND METHOD OF FORMING LOW REFRACTIVE INDEX FILM USING THE SAME

MITSUBISHI MATERIALS CORP...

1. A low refractive index film-forming composition comprising:
a hydrolysate of fluoroalkyl group-containing silicon alkoxide (B) represented by the following formula (2) and silicon alkoxide
(A) represented by the following formula (1); and

silica sol (F) including beaded colloidal silica particles,
wherein a mass ratio of silicon alkoxide (A) to silicon alkoxide (B) is 1:0.6 to 1:1.6 (A:B),
a content of SiO2 in the silica sol (F) is 50 parts by mass to 500 parts by mass with respect to 100 parts by mass of content of SiO2 in the hydrolysate,

a plurality of spherical colloidal silica particles which is contained in the beaded colloidal silica particles having an
average particle size of 5 nm to 50 nm which is measured with a BET method,

the plurality of spherical colloidal silica particles are linked to each other through metal oxide-containing silica in the
beaded colloidal silica particles,

a ratio D1/D2 of an average particle size (D1 nm) of the spherical colloidal silica particles, which is measured with a dynamic light scattering method, to an average particle
size (D2 nm) of the spherical colloidal silica particles, which is obtained according to an expression of D2=2720/S in which a specific surface area S m2/g is measured with a nitrogen adsorption method, is 3 to 20,

the average particle size D1 is 30 nm to 300 nm, and

the spherical colloidal silica particles are linked to one plane:
Si(OR)4  (1),

wherein R represents an alkyl group having 1 to 5 carbon atoms;
CF3(CF2)nCH2CH2Si(OR1)3  (2),

wherein R1 represents an alkyl group having 1 to 5 carbon atoms and n represents an integer of 0 to 8.

US Pat. No. 9,988,710

SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

MITSUBISHI MATERIALS CORP...

1. A sputtering target for producing a solar cell having a component composition containing:15 to 40 at % of Ga;
0.1 to 5 at % of Bi; and
the balance composed of Cu and unavoidable impurities with respect to all metal elements in the sputtering target, wherein
the sputtering target has a Bi-containing phase within crystal grains or at grain boundaries of an alloy phase mainly containing a Cu—Ga alloy,
the Bi-containing phase contains at least one of a Bi simple substance or an intermetallic compound containing 10 at % or greater of Bi,
the sputtering target has a density of 95% or greater, and
the average grain diameter of the Bi-containing phase is from 0.5 ?m through 80 ?m.

US Pat. No. 9,833,855

METHOD FOR MANUFACTURING POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A method for manufacturing a power module substrate including a ceramic substrate, a circuit layer formed of a copper sheet
bonded onto one surface of the ceramic substrate, and a metal layer formed of an aluminum sheet bonded onto the other surface
of the ceramic substrate, the method comprising:
a first lamination step of laminating the copper sheet on the one surface of the ceramic substrate through an active metal
material and a filler metal, the filler metal having a melting point of 600° C. or lower;

a second lamination step of laminating the aluminum sheet on the other surface of the ceramic substrate through a bonding
material; and

a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together at
a heating temperature of 650° C. or lower in a state of being pressurized in the lamination direction at 1 kgf/cm2 to 35 kgf/cm2, wherein

the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time, and
the filler metal does not come into direct contact with the copper sheet.
US Pat. No. 9,815,116

PROCESS FOR PRODUCING POROUS SINTERED ALUMINUM, AND POROUS SINTERED ALUMINUM

MITSUBISHI MATERIALS CORP...

1. A method for producing porous sintered aluminum comprising:
mixing aluminum powder with a sintering aid powder containing titanium to obtain a raw aluminum mixed powder;
mixing the raw aluminum mixed powder with a water-soluble resin binder, water, and a plasticizer containing at least one selected
from polyhydric alcohols, ethers, and esters to obtain a viscous composition;

drying the viscous composition in a state where air bubbles are mixed therein to obtain a formed object prior to sintering;
and

heating the formed object prior to sintering in a non-oxidizing atmosphere,
wherein when a temperature at which the raw aluminum mixed powder starts to melt is expressed as Tm (° C.), a temperature
T (° C.) of the heating fulfills Tm?10 (° C.)?T?685 (° C.).

US Pat. No. 9,700,858

CONTINUOUS KNEADING DEVICE

MITSUBISHI MATERIALS CORP...

1. A continuous kneading device comprising:
a powder supply tube in which a liquid supply pipe is provided in an inside of the powder supply tube;
an upper trunk to which the powder supply tube through which quantified powder is supplied is connected and in which the powder
is blended with a liquid; and

a lower trunk concentrically connected to a lower side of the upper trunk,
wherein the powder and the liquid are continuously kneaded by a first rotary kneading disc built in the upper trunk and a
second rotary kneading disc built in the lower trunk,

wherein a rotary plate is fixed to an upper surface of the second rotary kneading disc, and a fixed plate is fixed to the
upper trunk,

wherein recessed grooves are formed on an upper surface of the rotary plate at regular intervals in a radial direction so
as to extend along a circumferential direction that is a rotational direction of the rotary plate,

wherein recessed grooves are formed on a lower surface of the fixed plate at regular intervals in a radial direction so as
to extend along a circumferential direction that is a rotational direction of the rotary plate,

wherein the upper surface of the rotary plate faces to the lower surface of the fixed plate, wherein at least the upper surface
of the rotary plate and the lower surface of the fixed plate are covered with one compound selected from the group consisting
of DLC, PEEK, PTFE, TiN, and TiCN, and

wherein an internal diameter of a second kneading chamber provided on the lower trunk is formed so as to be larger than an
internal diameter of a first kneading chamber provided on the upper trunk.

US Pat. No. 9,580,811

DISPERSION OF METAL NANOPARTICLES, METHOD FOR PRODUCING THE SAME, AND METHOD FOR SYNTHESIZING METAL NANOPARTICLES

Mitsubishi Materials Corp...

1. A method for synthesizing metal nanoparticles, comprising the steps of:
preparing an aqueous metal salt solution (A) by dissolving a metal salt, said aqueous metal salt solution (A) consisting essentially
of the metal salt and a solvent;

preparing an aqueous carboxylic acid solution (B) by dissolving one type or two or more types of compounds selected from the
group consisting of, citric acid, maleic acid, and salts thereof;

preparing an aqueous reducing agent solution (C) by dissolving one type or two or more types of compounds selected from the
group consisting of formic acid and salts thereof;

mixing the aqueous carboxylic acid solution (B) with the aqueous metal salt solution (A) so as to obtain a suspension of a
carboxylic acid salt in which poorly-soluble carboxylic acid salt precipitates; and

forming metal nanoparticles by adding and mixing the aqueous reducing agent solution (C) with the suspension of the carboxylic
acid salt,

wherein the aqueous solutions (A), (B), and (C) are separately prepared,
metal elements contained in the metal salt comprise 75% by mass or more of silver, and
the mixing with the aqueous reducing agent solution is carried out by stirring at a temperature of 25 to 95° C.

US Pat. No. 9,831,102

COPPER-CERAMIC BONDED BODY AND POWER MODULE SUBSTRATE

MITSUBISHI MATERIALS CORP...

1. A copper-ceramic bonded body comprising:
a copper member formed of copper or a copper alloy; and
a ceramic member formed of nitride ceramic,
wherein the copper member and the ceramic member are bonded to each other,
an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member
and the ceramic member, and

a thickness of the active element oxide layer is in a range of 5 nm to 200 nm
wherein the active element is selected from the group consisting of Ti, Zr, Hf, and Nb.

US Pat. No. 9,815,127

BALL END MILL

MITSUBISHI MATERIALS CORP...

1. A ball end mill comprising:
a main end mill body rotatable about an axis;
at least one gash provided at a front end portion of the main end mill body; and
at least one cutting edge which has a rotational trajectory around the axis that forms a convex hemispherical shape having
a center on the axis, said cutting edge being provided at a peripheral edge portion of a wall surface of the gash facing an
end mill rotation direction,

wherein a difference between first and second included angles is within ±7°, where the first included angle is formed between
the axis and a first straight line connecting the center on the axis with a first position on the cutting edge at which a
depth of the gash is maximal in a cross-section orthogonal to the cutting edge, and the second included angle is formed between
the axis and a second straight line connecting the center on the axis with a second position on the cutting edge at which
a rake angle of the cutting edge is maximal on a positive angle side in the cross-section,

the rake angle is not a negative angle along the entire cutting edge, and
the rake angle is increased on the positive angle side from a front end of the cutting edge toward the second position, and
the rake angle is reduced from the second position toward a rear end of the cutting edge.

US Pat. No. 9,616,507

REPLACEABLE HEAD CUTTING TOOL

MITSUBISHI MATERIALS CORP...

1. A replaceable head cutting tool comprising:
a tool body having a mounting hole having a cylindrical inner peripheral surface; and
a coupling member having a cylindrical mounting unit to be inserted into the mounting hole along an insertion direction, wherein
the tool body includes, from a front end to a rear end thereof, a cutting edge portion on which cutting edges are provided,
an engagement portion on which a wrench can be engaged, and a shaft portion having an outer diameter smaller than outer diameters
of the cutting edge portion and the engagement portion,

the mounting hole opens at the rear end of the shaft portion and is extended toward the cutting edge portion,
the coupling member is made of a metal material having a hardness lower than the hardness of a hard material of the tool body,
a plurality of concave portions are provided on the inner peripheral surface of the mounting hole at intervals in the insertion
direction,

the plurality of the concave portions includes a first concave portion at a front end thereof, which is positioned inside
the engagement portion,

each of the concave portion has a first wall surface that is inclined outwardly along the insertion direction, and a second
wall surface that is opposite to the first wall surface and is inclined inwardly along the insertion direction,

the first wall inclines a first inclination angle with respect to a perpendicular plane perpendicular to the insertion direction
at a position where the first wall intersects with the inner peripheral surface of the mounting hole,

the second wall inclines a second inclination angle with respect to the perpendicular plane at a position where the second
wall intersects with the inner peripheral surface of the mounting hole,

the first inclination angle is smaller than the second inclination angle,
the mounting unit is inserted in the mounting hole,
the mounting unit is enlarged in diameter so that an outer peripheral surface of the mounting unit contacts the inner peripheral
surface of the mounting hole and is engaged with the plurality of the concave portions, and

the tool body and the coupling member are joined to each other.

US Pat. No. 9,786,577

POWER MODULE SUBSTRATE, HEAT-SINK-ATTACHED POWER-MODULE SUBSTRATE, AND HEAT-SINK-ATTACHED POWER MODULE

MITSUBISHI MATERIALS CORP...

1. A power-module substrate comprising a circuit layer which is stacked on one surface of a ceramic substrate and a metal
layer which is stacked on the other surface of the ceramic substrate, wherein
the circuit layer comprises a first aluminum layer which is bonded on the one surface of the ceramic substrate and a first
copper layer which is bonded on the first aluminum layer by solid-phase-diffusion bonding,

the metal layer comprises a second aluminum layer, which is made from a same material as that of the first aluminum layer
and bonded on the other surface for the ceramic substrate, and a second copper layer, which is made from a same material as
that of the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding,

a thickness t1 of the first copper layer is 1.7 mm or larger and 5 mm or smaller (1.7 mm?t1?5 mm),

a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller (t1+t2?7 mm), and

a ratio t2/t1 between the thickness t1 of the first copper layer and the thickness t2 of the second copper layer is in a range larger than 0 and 1.2 or smaller (0

US Pat. No. 9,630,256

CUTTING INSERT

MITSUBISHI MATERIALS CORP...

1. A cutting insert comprising:
an insert main body which has a rake face and a flank face; and
a cutting edge which is formed at a ridge section between the rake face and the flank face in the insert main body, the cutting
edge provided with a corner section which forms a convex arc shape when seen in a planar view from the direction facing the
rake face and a linear section which is in contact with the corner section at an end of the corner section and extends linearly,

wherein
the insert main body is formed symmetrical with respect to a bisector of the corner section when seen in the planar view,
the cutting edge is provided with a first region along the corner section, a second region along the linear section, and a
third region positioned between the first region and the second region along the linear section, when seen in the planar view,
and

a cross-sectional area of the insert main body orthogonal to the cutting edge is largest in the third region among the first,
the second and the third regions, and is smallest in the second region among the first, the second and the third regions,
the cross-sectional area of the insert main body being within a distance equal to a radius R (mm) of the corner section in
perpendicular to the cutting edge in the planar view, and

a border line between the second region and the third region in a planar view is positioned at where there is an increase
in the cross-sectional area of the insert main body from the third region to the second region,

an inclination face which is inclined toward a face on a side opposite to the rake face of the insert main body with moving
toward the inside of the rake face from the cutting edge on a cross-section orthogonal to the cutting edge is formed on the
rake face from the first region, the second region to the third region, and an inclination angle of the inclination face in
the third region is smaller than an inclination angle of at least in one of the first region and the second region.