1. A method comprising:growing a III-nitride structure grown on a substrate, the III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein the III-nitride structure comprises a region including only ternary, quaternary, and/or quinary III-nitride layers and the region including only ternary, quaternary, and/or quinary IIInitride layers is thicker than 2 ?m and growing a base region disposed between the substrate and the light emitting layer, the base region comprising a first layer proximate the substrate and a second layer proximate the light emitting layer wherein the net polarization-induced charge at the interface of the first layer and the second layer is zero, the first layer is a quaternary layer AlxInyGa1-x-yN between 3 and 1000 nm, and the second layer is a quaternary layer AlxInyGa1-x-y N of a different composition than the first layer;
attaching the III-nitride structure to a mount; and
removing the substrate, wherein:
the substrate is RA03(MO)n, where R is one of a trivalent cation, Sc, In, Y, and a lanthanide; A is one of a trivalent cation, Fe (III), Ga, and AI; M is one of a divalent cation, Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1;the substrate has an in-plane lattice constant asubstrate;at least one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer; and
[(1 asubstrate?alayer|)/asubstrate]*100% is no more than 1%.