1. A light-emitting diode (LED) module, comprising:
a housing body, comprising:
a recess;
a top opening in the recess;
clamps positioned around the recess; and
a bottom opening coupled to the top opening, the bottom opening comprising a ceiling, the ceiling defining glue overflow channels;
a metal shim, comprising:
a base plate abutting a bottom of the housing body, the base plate forming a bond pad;
molding tabs extending from the base plate into the housing body; and
holes each defined partly by a molding tab and the base plate, wherein the holes are filled with a housing material that forms
part of the housing body so the metal shim and the housing body form an integral structure;

a lens;
a ceramic phosphor plate fixed to the bottom of the lens, wherein the lens is received in the recess so the ceramic phosphor
plate fully covers the top opening and the clamps are plastically deformed to clamp the lens; and

an LED comprising a submount and one or more flip chip LED dies mounted on the submount, wherein the submount comprises bottom
pads, each LED die comprises a n-type layer, a light-emitting layer, and a p-type layer, and the submount is seated completely
in the bottom opening.

1. A method for manufacturing an illumination device, the method comprising:providing a substrate having a first side provided with a light source;
providing an at least partially light transmitting cover sealingly coupled to the substrate such that a chamber is defined by at least the first side of the substrate and the cover;
providing a through-hole into the chamber;
introducing a luminescent material into the chamber via the through-hole such that a layer of luminescent material is provided on at least a portion of an inner surface of the cover; and
after the introduction of the luminescent material, sealing the through-hole with a sealing material that is different from the luminescent material, the sealing material being disposed in the through-hole and configured to protect the luminescent material from an environment of the illumination device.

1. A light-emitting device comprising:a light-emitting semiconductor structure including a first layer, a second layer, and a third layer, the second layer being disposed between the first layer and the third layer, and the third layer being exposed through an etch that is formed in the first layer and the second layer;
a dielectric layer formed over the light-emitting semiconductor structure;
a first non-planar metal layer that is formed over the dielectric layer and electrically coupled to the first layer;
a second non-planar metal layer that is formed over the dielectric layer and electrically coupled to the third layer;
a stress-buffer layer that is formed of a dielectric polymer, the stress-buffer layer being disposed over the first metal layer and the second metal layer to form a substantially planar surface, the stress-buffer layer being arranged to at least partially fill a trench formed in a periphery of the semiconductor structure that surrounds a central portion of the semiconductor structure; and
a plurality of metal solder pads disposed over the stress-buffer layer, each of the metal solder pads being electrically connected to one of the first metal layer and the second metal layer through a respective opening formed in the stress-buffer layer.

1. An apparatus comprising:a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section including at least one first LED and at least one second LED; and
a controller configured to:
apply a forward bias to each of the first LEDs;
apply a reverse bias to each of the second LEDs; and
change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.

1. A lighting device comprising:a body formed of a thermally conductive, electrically insulating material, the body including a top portion and an elongated member extending from the top portion, the elongated member being narrower than the top portion of the body;
a plurality of conductive pads and a thermal pad embedded in the thermally conductive, electrically insulating material of the body and exposed at a mounting area on the top portion; and
a semiconductor light emitting device disposed in the mounting area and connected to the body through the plurality of conductive pads and the thermal pad.

1. A device comprising:
a waveguide comprising a first section of transparent material;
a light source disposed proximate a bottom surface of the waveguide, the light source comprising:
a base element upon which at least one semiconductor light emitting diode is situated;
sidewalls that extend from the base element to the waveguide and form a cavity between the semiconductor light emitting device
and the light guide; and

a second section of transparent material disposed within the cavity; and
a surface to be illuminated proximate a top surface of the waveguide;
wherein:
the sidewalls are reflective, and
the semiconductor light emitting diode includes a photonic crystal configured such that at least half of energy emitted by
the semiconductor light emitting diode is emitted at angles >45° relative to a normal to a top surface of the semiconductor
light emitting diode.

1. A method for manufacturing light-emitting diode (LED) modules in parallel, comprising:
molding a lens array of lenses wherein each lens is adjoined with neighboring lenses;
molding a housing array of housing bodies wherein each housing body is adjoined with neighboring housing bodies;
bonding the lens array's bottom surface to the housing array's top surface to form a combined array;
attaching LEDs to the housings in the combined array; and
singulating the combined array to form individual LED modules.

1. A process for the production of a luminescent material, the luminescent material comprising particles having a porous inorganic material core with pores which are at least partly filled with a polymeric material with luminescent quantum dots embedded therein, the process comprising:impregnating the particles of the particulate porous inorganic material with a first liquid comprising the luminescent quantum dots and a curable or polymerizable precursor of the polymeric material, to provide pores that are at least partly filled with said luminescent quantum dots and curable or polymerizable precursor; and curing or polymerizing the curable or polymerizable precursor within pores of the porous material.

1. A light emitting device comprising:a substrate;
a light emitting element situated on the substrate;
a lens element having a cavity within which the light emitting element is situated, an exterior surface, a bottom surface for mounting the lens element, and an interior surface;
an adhesive that surrounds a majority of a perimeter of the light emitting element, but does not completely surround the perimeter of the light emitting element to form a gap in the adhesive, the gap being positioned between an upper surface of the substrate and the bottom surface of the lens element to connect the cavity to an exterior of the lens element, the adhesive being disposed in a plane parallel to a light emitting surface of the light emitting element, the adhesive attaching the bottom surface of the lens element to the upper surface of the substrate; and
a sealing material that is situated within the gap in the adhesive, the sealing material sealing the cavity.

1. A system including an ignitor arrangement for a high-intensity discharge lamp and a lamp driver realized to drive the high-intensity discharge lamp via the ignitor arrangement,the ignitor arrangement comprising:
a first pair of input terminals for applying an ignition voltage to the ignitor arrangement;
a second pair of input terminals for applying an input drive voltage to the ignitor arrangement;
an ignition capacitor; and
a discharge resistor connected in parallel with the ignition capacitor and for discharging the ignition capacitor, the discharge resistor being arranged in an interior of the ignitor arrangement and connected across the first input terminal pair, the discharge resistor further being a temperature-dependent resistor having a resistance that depends on a temperature (T100) in the interior of the ignitor arrangement, wherein
the first pair of input terminals comprises an ignition terminal that is not shared with the second pair of input terminals and is not used for the input drive voltage, and
the lamp driver comprising:
ignition circuitry realized to apply the ignition voltage across the first pair of input terminals of the ignitor arrangement;
drive circuitry realized to apply the input drive voltage across the second pair of input terminals of the ignitor arrangement;
a temperature evaluation unit realized to determine the temperature (T100) in the interior of the ignitor arrangement, such determination comprising measuring a resistance of the temperature-dependent discharge resistor of the ignitor arrangement during a steady-state operation of the high-intensity discharge lamp; and
a control unit for regulating an operating power of the high-intensity discharge lamp on basis of the temperature (T100) in the interior of the ignitor arrangement.

1. An illumination system comprising a radiation source and a monolithic ceramic luminescence converter comprising a composite material comprising at least one luminescent compound comprising at least one activator in a host lattice and at least one non-luminescent compound, wherein the luminescent compound and the non-luminescent compound each comprise silicon and nitrogen and wherein the host lattice and the non-luminescent compound are different materials, wherein the luminescent compound is an amber or red-emitting europium(II)-doped alkaline earth oxonitridoaluminosilicate compound of general formula Ba2?x?zMXSi5?yAlyN8?yOy: Euz, wherein M=Sr, Ca; 0?x?2, 0?y?4, 0.0005?z?0.06 and the non-luminescent compound is an alkaline earth oxonitridoaluminosilicate compound of general formula Ba1?xMXSi7?yAlyN10?yOy, wherein M=Sr, Ca, Eu; 0?x?1 and 0?y?3.

1. A device, comprising:a light source comprising a light emitting diode for generating light source light; and
a luminescent material for converting at least part of the light source light into luminescent material light, wherein the luminescent material comprises hexagonal phase (K1?r?l?n?c?nhRbrLilNanCSc(NH4)nh)2Si1?m?t?g?s?zrMnmTitGegSnsZrzr(F1?cl?b?iClclBrbIi)6, wherein m is in the range of 0.001-0.15, wherein t, g, s, and zr are each individually in the range of 0-0.2, with t+g+s+zr greater than 0 and equal to or smaller than 0.2, wherein r is in the range of 0.2-0.8, wherein l, n, c, and nh are each individually in the range of 0-0.2, with l+n+c+nh greater than 0 and equal to or smaller than 0.2, wherein cl, b, and i are each individually in the range of 0-0.2, with cl+b+i greater than 0and equal to or smaller than 0.2;
wherein the luminescent material is in direct contact with the light source.

1. A method comprising:determining a target light extraction efficiency of a light emitting device;
determining, based on an output function, a proportion of a roughened surface area to a not roughened surface area wherein the light emitting device emits the target light extraction efficiency when configured based on the determined proportion;
applying a surface etch process on a light emitting surface to create the roughened surface area, wherein the roughened surface area relative to the not roughened surface area is based on the determined proportion, and wherein the light emitting surface is a top surface of the light emitting device that is not covered by a contact;
applying an etch-inhibiting pattern on the light emitting surface to create the not roughened surface area, wherein the amount of the not roughened surface area relative to the amount of roughened surface area is based on the determined proportion, and wherein the area that is not roughened surrounds the roughened surface area.

1. A method comprising:providing a wafer comprising a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region;
bonding the wafer to a transparent substrate that comprises a wavelength converting material disposed in glass;
removing the growth substrate;
after bonding the wafer to the transparent substrate, processing the wafer into multiple light emitting devices;
testing the wafer after processing the wafer into multiple light emitting devices and before dicing the wafer; and
adjusting an amount of wavelength converting material corresponding to each light emitting device according to the results of the testing.

1. A device comprising:a waveguide;
light sources disposed proximate a bottom surface of the waveguide, each light source comprising:
a laterally emitting light emitting diode (LED) that emits a majority of light into large angles relative to a normal to a top surface of the laterally emitting LED;
a cavity separating the laterally emitting LED from the waveguide;
a transparent material disposed within or defining the cavity; and
a dichroic filter disposed between the waveguide and the cavity.

1. A light emitting diode (LED) module comprising:a first dielectric layer on a base metal substrate;
a first patterned metal layer on the first dielectric layer;
a local shielding area within the first patterned metal layer, the local shielding area comprising a substantially continuous area of conductive material;
a second dielectric layer on the first patterned metal layer;
a second patterned metal layer on the second dielectric layer;
one or more LEDs on the second patterned metal layer, wherein the one or more LEDs are thermally coupled to the base metal substrate;
one or more devices on the second patterned metal layer configured to provide a target current to the one or more LEDs, wherein a device of the one or more devices carries a steep slope voltage waveform and is located above at least a portion of the local shielding area; and
a DC voltage node on the second patterned metal layer, wherein the DC voltage node is electrically connected to the local shielding area.

1. A method comprising:determining a target light extraction efficiency of a light emitting device;
determining, based on an output function, a proportion of a roughened surface area to a not roughened surface area wherein the light emitting device emits the target light extraction efficiency when configured based on the determined proportion;
applying a surface etch process on a light emitting surface to create the roughened surface area, wherein the roughened surface area relative to the not roughened surface area is based on the determined proportion, and wherein the light emitting surface is a top surface of the light emitting device that is not covered by a contact;
applying an etch-inhibiting pattern on the light emitting surface to create the not roughened surface area, wherein the amount of the not roughened surface area relative to the amount of roughened surface area is based on the determined proportion, and wherein the area that is not roughened surrounds the roughened surface area.

1. A method comprising:
disposing a first wavelength converting material over a light source;
aligning the light source with an indentation in a mold so that the light source is facing the indentation and the first wavelength
converting material is between the light source and the mold;

positioning a flexible film comprising a second wavelength converting material between the first wavelength converting material
and the mold;

disposing a transparent molding material between the light source and the mold; and
pressing the light source and the mold together to cause the transparent molding material to fill the indentation and to cause
the flexible film to conform to a predetermined shape.

1. A device comprising:
a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a porous III-nitride region;
a III-nitride layer comprising indium disposed between the light emitting layer and the porous III-nitride region;
a mask layer disposed between the porous III-nitride region and the III-nitride layer comprising indium; and
a plurality of openings formed in the mask layer.

1. A light emitting device comprising:a light emitting diode structure, said diode structure comprising a first semiconducting layer, a second semiconducting layer, and an active region sandwiched between said first and second semiconducting layer, at least one of said first and second semiconducting layer having a light output surface facing away from said active region, wherein the light output surface emits light out of the diode structure,
wherein a growth substrate used to epitaxially grow the first semiconducting layer, the second semiconducting layer, and the active region has been removed from the diode structure;
wherein the light output surface has an area extending in an x direction and a perpendicular y direction;
wherein said light output surface comprises a plurality of differently orientated protruding surface structures extending in both the x direction and the y direction such that there is a two-dimensional array of individual ones of the protruding surface structures, each protruding surface structure having a peak height, a sidewall slope and an orientation in relation to the active region, said plurality of protruding surface structures comprising a first set and a second set of protruding surface structures, said first set and second set of protruding surface structures differing by at least one of said peak height, sidewall slope and orientation in relation to the active region to increase light extraction out of the protruding surface structures in a direction away from the active region; and
wherein, for at least a first subset of the protruding surface structures, which forms a majority of the protruding surface structures, their orientations with respect to other protruding surface structures directly next to each of the protruding surface structures in the first subset of protruding surface structures are different so that sloped sidewalls of the adjacent protruding surface structures do not directly face each other.

1. A light-emitting device, comprising:a light-emitting structure, the light-emitting structure including a plurality of semiconductor layers, one or more first contacts, and one or more second contacts that have a higher light reflectance than the first contacts; and
a substrate coupled to the light-emitting structure, the substrate including one or more light-scattering structures that are horizontally aligned with the first contacts and horizontally offset from the second contacts to permit at least some of light that is reflected off the second contacts to travel past the light-scattering structures.

1. An illumination system comprising:a first signal generator configured to generate a first pulse-width modulated (PWM) signal based on a first control signal;
a subtracting circuit configured to generate a second control signal based on a difference in voltage between a reference signal and the first control signal;
a second signal generator configured to generate a second PWM signal based on the second control signal;
a third signal generator configured to generate a third PWM signal based on at least one of the first PWM signal and the second PWM signal, the third PWM signal having a different duty cycle than at least one of the first PWM signal and the second PWM signal;
a first light emitting diode (LED) that is powered using the first PWM signal, the first LED being configured to emit a first type of light;
a second LED that is powered using the second PWM signal, the second LED having a second correlated color temperature (CCT), the second LED being configured to emit a second type of light; and a third LED that is powered using the third PWM signal, the third LED being configured to emit a third type of light.

1. A light emitting device comprising:a reflective cup comprising a specular material and having reflective surfaces that slope monotonically upward from a central portion of the cup at an angle between 28 degrees and 38 degrees;
a light emitting diode (LED) die mounted in the central portion of the cup and emitting a first light of a first wavelength;
a phosphor positioned over the LED die; and
a clear encapsulant filling the cup to cover at least a top of the phosphor coating, the encapsulant having a flat outer surface substantially parallel to a top surface of the LED die,
wherein the phosphor absorbs a portion of the first light and emits a second light of a second wavelength,
wherein the encapsulant has an air-encapsulant interface arranged such that at least a portion of the first light unabsorbed by the phosphor coating and at least a portion of the second light intercept the air-encapsulant interface at an angle less than a critical angle and are totally internally reflected (TIR) as a first reflected light in a direction toward at least one of the reflective surfaces,
wherein the reflective surfaces reflect the first reflected light as a second reflected light in a direction that passes through the air-encapsulant interface.

1. A method comprising:growing a first III-nitride layer directly on a substrate;
making at least a portion of the first III-nitride layer porous;
growing a second III-nitride layer directly on the porous portion, the second layer comprising InGaN; and
growing a device structure directly on the second III-nitride layer, the device structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region.

1. A structure comprising:a semiconductor light emitting device;
a first wavelength converting member disposed on a top light-emitting surface of the semiconductor light emitting device, the first wavelength converting member comprising a first wavelength converting material and is no wider than the top light-emitting surface; and
a second wavelength converting member disposed on a side surface of the semiconductor light emitting device, the second wavelength converting member comprising a second wavelength converting material that is not over the top light-emitting surface, the first and second wavelength converting materials being different wavelength converting materials.

1. A device comprising:a light emitting diode (LED) mounted on an electrically conducting substrate;
a plurality of metal pins electrically connected to the electrically conducting substrate;
a lens disposed over said LED; and
a polymer body molded over the electrically conducting substrate and encapsulating the LED and the electrically conducting substrate;
wherein the lens and the plurality of metal pins protrude from the polymer body and wherein the electrically conducting substrate is at least partially coated with an electrically insulating coating such that the polymer body is not in direct contact with the plurality of metal pins.

1. A light emitting diode (“LED”) module comprising:a first LED tap and a second LED tap, the first LED tap being powered on for a longer amount of time than the second LED tap, based on an alternating current voltage;
a first LED package on which a first LED associated with the first LED tap and a second LED associated with the second LED tap are disposed, each of the LEDs in the first LED package being associated with a different tap; and
a second LED package on which a third LED associated with the first LED tap and a fourth LED associated with the second LED tap are disposed, each of the LEDs in the second LED package being associated with a different tap,
wherein each of the first LED tap and the second LED tap is associated with a same number of LEDs and the second LED package is disposed a distance along a housing from the first LED package such that the LEDs of the first LED package appear approximately as a point light source and the LEDs of the second LED package appear approximately as a point light source, to average out lighting variations provided to the first LED tap and the second LED tap.

1. A method comprising:providing a wafer of light emitting semiconductor devices, each light emitting semiconductor device comprising an n-type region, a p-type region, a first metal contact in direct contact with the n-type region, and a second metal contact in direct contact with the p-type region;
forming a first metal layer configured to provide support to the light emitting semiconductor device during later processing on the first contact of each light emitting semiconductor device;
forming a second metal layer configured to provide support to the light emitting semiconductor device during later processing on the second metal contact of each light emitting semiconductor device;
surrounding the first metal layer with an insulating layer to fill a first opening between the first metal layer and the second metal layer;
planarizing the insulating layer, first metal layer and second metal layer along a same plane;
positioning the wafer of light emitting semiconductor devices on and in contact with a wafer of support substrates, the wafer of support substrates comprising a plurality of metal regions formed on a surface of a body and separated by gaps filled with ambient gas, a bottom of each gap comprising a surface that is not wettable by the metal regions; and
heating the wafer of light emitting semiconductor devices positioned on the wafer of support substrates and reflowing any portions of the plurality of metal regions in contact with a surface of the insulating layer facing the wafer of support substrates into contact with one of the first metal layer and the second metal layer and off of the surface of the insulating layer, leaving the plurality of metal regions in contact with only one of the first metal layer and second metal layer.

1. A device comprising:a substrate;
a semiconductor structure disposed on the substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
wherein:
the substrate comprises a first sidewall and a second sidewall;
the first sidewall and second sidewall are disposed at different angles relative to a major surface of the semiconductor structure;
the first sidewall forms a right angle with the major surface of the semiconductor structure; and
light is extracted from the substrate through the second sidewall; and
a reflective layer disposed over the first sidewall, the reflective layer extending from the semiconductor structure to an interface between the first sidewall and the second sidewall.

1. A lighting structure comprising:a semiconductor light emitting device;
a substantially flat wavelength converting element attached to the semiconductor light emitting device, an area of a bottom surface of the wavelength converting element facing the semiconductor light emitting device being greater than an area of a top surface of the semiconductor light emitting device, the substantially flat wavelength converting element comprising:
a wavelength converting layer having first side edges extending up from the bottom surface; and
a transparent layer, the wavelength converting layer being formed on the transparent layer, the transparent layer having second side edges extending down from an upper surface of the wavelength converting element, and even with the first side edges of the wavelength converting layer; and
a reflector in direct contact with a side of the semiconductor light emitting device, the first side edges, and a portion of the bottom surface extending beyond the top surface of the semiconductor light emitting device.

1. A method comprising:laminating a film over a plurality of light emitting diodes (LEDs) disposed on a mount by mounting the film over the plurality of LEDs and applying a heat of a first temperature under a pressure, such that the film covers the LEDs and adheres to the mount in areas between neighboring LEDs and forms a laminated structure;
cooling the laminated structure;
applying heat of a second temperature to the laminated structure in a vacuum, the second temperature being higher than the first temperature; and
after applying the heat of the second temperature to the laminated structure in the vacuum, reducing a thickness of a portion of the film disposed over top surfaces of the plurality of LEDs by pressing a flattening element against the top surfaces of the plurality of LEDs while applying heat of a third temperature that is the same as or different than the first temperature.

1. A particulate luminescent material comprising quantum dots with a capping agent coordinating to the quantum dots, wherein the capping agent comprises a zincate ion (Zn(OH)42?), and the particulate luminescent material comprises particles having an inorganic matrix hosting the quantum dots with inorganic capping agents.

1. A control circuit for a light emitting diode (LED) lighting system for achieving a dim-to-warm effect between a minimum brightness-maximum dimming level, and a maximum brightness-minimum dimming level, the control circuit comprising:a clamp circuit coupled to a set of warm correlated-color-temperature (“CCT”) LEDs;
a switch coupled to a set of cool CCT LEDs;
an LED controller configured to:
sense the magnitude of an adjustable input current;
control the clamp circuit to clamp current through the set of warm CCT LEDs to a clamp current level based on the input current; and
control the switch to switch on the set of cool CCT LEDs responsive to the input current being greater than a first threshold level and to switch off the set of cool CCT LEDs responsive to the input current being lower than the first threshold level; and
a feedback circuit coupled to the clamp circuit and switch, the feedback circuit being configured to cause the clamp circuit to divert current from the set of warm CCT LEDs to the set of cool CCT LEDs in response to the input current exceeding a second threshold level.

1. A device comprising:
a semiconductor structure comprising:
a light emitting layer disposed between an n-type region and a p-type region;
a plurality of voids extending into the n-type region, the light emitting layer, and the p-type region of the semiconductor
structure;

an n-electrode metal disposed in the plurality of voids, wherein the n-electrode metals extends to an edge of the device;
a reflective metal disposed on the p-type region;
a p-electrode metal disposed on the reflective metal; and
a support material disposed in the plurality of voids, wherein a surface of the device is planar, wherein the planar surface
of the device includes a surface of the support material, a surface of the n-electrode metal, and a surface of the p-electrode
metal.

1. A light-emitting device configured to provide white light with a cyan gap coinciding with a melanopic sensitivity range, the light-emitting device comprising:a light source configured to provide violet or blue light with a peak wavelength under 450 nanometers (nm); and
at least one down-converter coupled to and located downstream of the light source and configured with a long-wavelength onset to convert a spectrum of the violet or blue light to generate the white light with a correlated color temperature (CCT) greater than or equal to 2700 Kelvin (K) and with a spectral power content in a 447-531 nm wavelength range that is less than or equal to 10% of a total spectral power content in a 380-780 nm wavelength range.

1. A light emitting structure comprising: LEDs that are electrically isolated from each other and arranged in an array, each LED comprising:a light emitting active region disposed between an n-type region and a p-type region;
an L-shaped first type contact layer disposed on and electrically connected to one of the p-type region and n-type region; and
an inverted L-shaped second type contact layer disposed on and electrically connected to one of the p-type region and n-type region not connected to the L-shaped first type contact layer, the L-shaped second type contact layer arranged in an interlocking manner with the L-shaped first type contact layer,
wherein two of the LEDs are arranged in a first orientation; and
the remaining LEDs are arranged in a second orientation inverted from the first orientation.

1. An illumination device comprising:a substrate;
an optically transmissive first layer arranged on the substrate;
a photon emitting layer, arranged on the optically transmissive first layer and comprising a photon emitting material configured to receive energy from an energy source and to emit light having a predetermined wavelength;
a periodic plasmonic antenna array, arranged on the substrate and embedded within and covered by the optically transmissive first layer, and comprising a plurality of individual antenna elements arranged in an antenna array plane, the plasmonic antenna array being configured to support a first lattice resonance at the predetermined wavelength, arising from coupling of localized surface plasmon resonances in the individual antenna elements to at least one photonic resonance mode by combining the plasmonic antenna array and the photon emitting layer, wherein the plasmonic antenna array is configured to comprise plasmon resonance modes such that light emitted from the plasmonic antenna array has an anisotropic angle distribution; and
wherein the photon emitting layer is arranged at a distance from the antenna array plane corresponding to a location of maximum field enhancement for light out-coupling resulting from plasmonic-photonic lattice resonances.

1. A method comprising:roughening a light extracting surface of a semiconductor structure, the semiconductor structure comprising a light emitting layer; and
after said roughening, reducing the mean surface roughness of the light extracting surface.

1. A structure comprising:a semiconductor light emitting device for emitting a first light at a first wavelength;
a wavelength conversion medium arranged to convert at least part of the first light into a second light at a second wavelength; and
a periodic antenna array comprising a plurality of antennas, wherein the periodic antenna array supports surface lattice resonances arising from diffractive coupling of localized surface plasmon resonances in at least one of the antennas;
wherein a distance between the wavelength conversion medium and the periodic antenna array is smaller than the wavelength of the first light or the second light.

1. A method comprising:providing an electronic device with a first surface and a second surface opposite the first surface;
providing a first solder pad at a first distance above the first surface and a second solder pad at second distance above the first surface, the first distance being different from the second distance;
providing a dielectric layer between the first solder pad and the second solder pad;
after the step of providing the dielectric layer, plating a first metal layer portion over the first solder pad above a height of the dielectric layer so that, immediately after the step of plating, the first metal layer portion extends above any insulating material;
after the step of providing the dielectric layer, plating a second metal layer portion, concurrently with plating the first metal layer portion, over the second solder pad above the height of the dielectric layer so that, immediately after the step of plating, the second metal layer portion extends above any insulating material;
planarizing the first metal layer portion and the second metal layer portion, so that the step of planarizing planarizes only the material forming the first metal layer portion and the second metal layer portion, resulting in the first metal layer and the second metal layer having a third and a fourth surface respectively, wherein the third surface and the fourth surface are in the same plane and still have a height above the height of the dielectric layer,
depositing a first solder layer over the first metal layer portion; and
depositing a second solder layer over the second metal layer portion, such that a top surface of the first solder layer is in the same plane as a top surface of the second solder layer.

1. A lighting device, comprisinga base element for electrical contacting and mechanical mounting;
an LED arrangement spaced from said base element along a longitudinal axis (L) of the lighting device; and
a heat dissipating structure, comprising:
a lower heat dissipating structure being arranged between said base element and said LED arrangement, said lower heat dissipating structure comprising a plurality of planar heat dissipation elements made out of a heat conducting material, said planar heat dissipation elements being arranged at least substantially perpendicular to said longitudinal axis (L), wherein:
said planar heat dissipation elements have extensions in cross-sections, measured in at least one radial direction from said longitudinal axis (L);
said extensions decrease along said longitudinal axis (L) in a direction from said base element to said LED arrangement;
a light emission direction (11) is defined by a line connecting at least one LED element of said LED arrangement with an outer edge of a planar heat dissipation element closest to said LED arrangement;
a lighting angle (?) is defined between a plane (P) perpendicular to said longitudinal axis (L) and said light emission direction (11);
said extensions in cross-sections of said planar heat dissipation elements and their spacing in direction of said longitudinal axis (L) are chosen to leave light emitted from said LED arrangement free from obstructions by said lower heat dissipating structure below said plane (P) in directions within an interval defined by said lighting angle (?).

1. A device comprising:
a III-nitride semiconductor structure comprising:
a first n-type layer including a textured surface, the textured surface having a cross sectional profile of peaks alternating
with valleys; and

a second n-type layer with at least partial strain relief grown over the textured surface, the layer with at least partial
strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain
relief;

a light emitting layer with at least partial strain relief, the light emitting layer having a top surface that is planar and
not textured, the light emitting layer being disposed on the second n-type layer within 1000 angstroms of the textured surface;
and

a p-type region disposed over the light emitting layer.

1. A device comprising:
a first semiconductor structure that includes:
an AlGaInP etch stop layer, having a thickness of less than 800 ?, that forms a first semiconductor surface of the first semiconductor
structure;

an AlGaInP light emitting layer disposed between an n-type region and a p-type region, a bandgap of the AlGaInP etch stop
layer being at least as large as a bandgap of the AlGaInP light emitting layer; and

a window layer through which light emitted by the light emitting layer is emitted from the device, the light emitting layer
being disposed between the etch stop layer and the window layer; and

a second semiconductor structure that includes a second semiconductor surface that is directly bonded to the first semiconductor
surface.

1. A light emitting structure comprising:
a plurality of metal lead frame strips, including at least a first strip, a second strip, and a third strip;
a plurality of first light emitting diode (LED) dies, each of the first LED dies having a first electrode and a second electrode,
wherein the first electrode of the first LED dies is electrically and thermally coupled to a top surface of the first strip;

a plurality of second LED dies, each of the second LED dies having a third electrode and a fourth electrode, wherein the third
electrode of the second LED dies is electrically and thermally coupled to a top surface of the second strip;

the second electrode of the first LED dies being wire bonded to the second strip, to cause the first LED dies to be connected
in parallel, and the fourth electrode of the second LED dies being wire bonded to the third strip, to cause the first LED
dies to be connected in series with the second LED dies and to cause the second LED dies to be connected in parallel; and

a single-piece, first optically transmissive enclosure molded over at least a first set of the first LED dies and over at
least a second set of the second LED dies, the first optically transmissive enclosure also being molded around the plurality
of lead frame strips to mechanically connect the lead frame strips together wherein the single-piece, first optically transmissive
enclosure is molded over the first set of the first LED dies and over the second set of the second LED dies, the structure
further comprising: a second optically transmissive enclosure molded over a third set of the first LED dies and over a fourth
set of the second LED dies, with a gap between the first optically transmissive enclosure and the second optically transmissive
enclosure; and wherein the plurality of lead frame strips are bent at the gap so that the first set of the first LED dies
and the third set of the first LED dies are in different planes, and so that the second set of the second LED dies are in
the same plane as the first set of the first LED dies, and the fourth set of the second LED dies are in the same plane as
the third set of the first LED dies.

1. An LED lamp unit for an automobile, comprising:an electrical connector base;
a first heat sink connected to the electrical connector base;
a common plate-like mounting member having a first end connected to the first heat sink;
a first LED light source arranged on a first side of the common plate-like mounting member to emit in a first half space;
a second LED light source arranged on a second side of the common plate-like mounting member to emit in a second half space; and
a second heat sink connected to a second end of the common plate-like mounting member, wherein:
each heat sink comprises a tapered end facing the first and the second LED light sources; and
the first and the second LED light sources are in between the first and second heat sinks.

1. An LED module comprising:a substrate having a first thermal conductivity;
a plurality of LED dies electrically and thermally mounted on the substrate, wherein the LED dies are connected in parallel;
a wavelength conversion material having a second thermal conductivity substantially lower than the first thermal conductivity, the wavelength conversion material located overlying the LED dies;
a light transmitting top plate having a third thermal conductivity greater than the second thermal conductivity, the top plate being positioned over the wavelength conversion material; and
a hermetic seal formed by a sealant material between the top plate and the substrate surrounding the plurality of LED dies and wavelength conversion material,
the LED module having first flat sidewall edges around its periphery, the top plate having second flat sidewall edges around its periphery, and the substrate having third flat sidewall edges around its periphery, wherein the second flat sidewall edges and the third flat sidewall edges coincide to form the first flat sidewall edges of the LED module due to the top plate and the substrate being sealed during a wafer level process and the wafer then singulated to form the LED module,
the plurality of LED dies being located in a reflective single cavity formed in the substrate, the cavity having walls that surround all the LED dies, wherein the wavelength conversion material overlies the LED dies and at least partially fills the cavity,
wherein the wavelength conversion material is deposited into the cavity using the cavity as a mold for the wavelength conversion material, and wherein the top plate has one or more openings formed in it which are located directly over the cavity for depositing the wavelength conversion material into the cavity after the hermetic seal is formed.

1. A lamp, comprising:an envelope of a quartz glass material defining a discharge space; and
an electric conductor that is at least partly embedded in the quartz glass material of the envelope, wherein the electric conductor comprises:
a surface;
one or more recesses in at least a portion of the surface of the electric conductor; and
flexible dendritic protrusions on the portion of the surface of the electric conductor at edges of the one or more recesses, the flexible dendritic protrusions forming a brush-like structure on the portion of the surface of the electric conductor, wherein an average material density of the brush-like structure is between 20% and 80% of a solid structure of the same material, thereby providing a mechanical flexibility and deformation potential that is substantially higher than that of the solid structure of the same material.

1. A lighting module comprising:
a first plurality of light emitting elements of a first color;
a second plurality of light emitting elements of a second color;
a substrate upon which the first and second pluralities of light emitting elements are arranged;
an encapsulation layer that includes a first encapsulant positioned over each of the light emitting elements of the first
plurality of light emitting elements and a second encapsulant positioned over each of the light emitting elements of the second
plurality of light emitting elements and comprising a plurality of domes;

the first encapsulant further includes a concentration of wavelength conversion material that is substantially greater than
a concentration of wavelength conversion material in the second encapsulant and fills regions between the domes; and

a controller that controls an overall output of the lighting module and a ratio of light output of the light emitting elements
of the first plurality of light emitting elements and the light emitting elements of the second plurality of light emitting
elements.

1. A structure comprising:a substrate having a surface below an optical cavity;
one or more semiconductor light emitting diodes disposed on the surface of the substrate and disposed to emit light into the optical cavity;
a first region of wavelength converting material disposed on the surface of the substrate, the first region of wavelength converting material being below the optical cavity and extending from adjacent to the semiconductor light emitting diodes to sidewalls of the optical cavity, the wavelength converting material absorbing light having a wavelength emitted by the semiconductor light emitting diodes and emitting light having a different wavelength; and
a second region of wavelength converting material disposed above a top surface of the optical cavity, the top surface of the optical cavity comprising one or more reflective regions that are respectively aligned with the one or more semiconductor light emitting diodes and that are more highly reflective than an area of the top surface of the optical cavity not aligned with any of the semiconductor light emitting diodes, the reflective regions being positioned to reflect light from the light emitting diodes to the first region of wavelength converting material.

1. A light emitting device, comprising:a detector circuit; and
a light emitting diode (LED) die including:
a semiconductor stack grown on a substrate, the semiconductor stack including a n-type layer, an active layer and a p-type layer;
an emitter segment formed from one segment of the semiconductor stack, the emitter segment configured to emit a light ray;
a photosensor segment formed from another segment of the semiconductor stack, the photosensor segment configured to sense a reflected light ray from the substrate and generate a current responsive to the reflected light ray;
a segmentation layer formed between the emitter segment and the photosensor segment, the segmentation layer electrically isolating the emitter segment from the photosensor segment;
first electrodes configured to provide power to energize the emitter segment; and
second electrodes configured to send the current to the detector circuit, the detector circuit configured to convert the current to a signal which provides operational feedback with respect to the emitter segment.

1. A light-emitting device, comprising:an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain;
a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer.

1. A system comprising:a light source;
a converter configured to convert AC voltage to DC operating voltage;
a power backup device coupled to the converter;
a current source coupled to the power backup device, the current source being powered by the converter, the current source being configured to receive the DC operating voltage generated by the converter through the power backup device, and the current source being configured to output a pulse-width modulated (PWM) signal to the light source based on the DC operating voltage; and
a switching device coupled to the power backup device in parallel with the current source, the switching device being configured to couple the light source to the power backup device when the current source is disabled as a result of a supply of AC voltage to the converter being interrupted.

1. Lamp comprising:a burner (12) for emitting light,
a holder (16) for mechanically connecting the burner (12) with a socket (14), the holder (16) comprising a metal ring (26) and at least one leg (28) protruding from the metal ring (26), wherein:
the holder (16) supports the burner (12),
the metal ring (26) surrounds the burner (12),
the metal ring (26) is thermally connected to the burner (12) via a single connecting surface (40) that is in planar contact to the burner (12) at an angle of ?350° in circumferential direction and abuts against the burner (12), and
the burner (12) comprises a glass body (22) and a metal bush (24) fixed to the glass body (22), the metal bush (24) being in planar contact to the metal ring (26) of the holder (16).

1. A method for manufacturing a solid state light-emitting device (LED) lighting apparatus, comprising:forming a leadframe assembly comprising:
leadframes spaced apart at a first pitch, each leadframe comprising one or more pads; and
interconnects in an initial folded state, each interconnect linking two adjacent leadframes;
mounting LEDs on the leadframes;
disposing bidirectional spreading lenses about the LEDs, each bidirectional spreading lens having a spreading axis and a null axis perpendicular to the spreading axis, each bidirectional spreading lens directing more light in opposite directions along the spreading axis than the null axis; and
stretching the leadframe assembly so the interconnects unfold to space apart the LEDs at a second pitch greater than the first pitch;
the spreading axis being aligned with a stretch axis along the length of the stretched leadframe assembly after the leadframe assembly is stretched.

1. A device comprising:
a light emitting structure comprising a light emitting layer;
a first ceramic phosphor disposed in a path of light emitted by the light emitting layer;
a second ceramic phosphor disposed in a path of light emitted by the light emitting layer; and
a heat extraction structure;
wherein:
one of the first ceramic phosphor and the second ceramic phosphor is directly connected to the heat extraction structure;
a surface of the first ceramic phosphor is roughened;
one of the first ceramic phosphor and the second ceramic phosphor is a transparent or translucent ceramic slab formed by sintering;
the light emitting structure is disposed between a mount and the first ceramic phosphor and directly connected to the mount;
and

the heat extraction structure is disposed between the mount and the first ceramic phosphor and directly connected to the mount.

1. A method of fabricating a light emitting diode (LED) module comprising:providing a reflective cup containing at least one LED die;
positioning a solid piece on the at least one LED die and within the reflective cup, the solid piece abutting inner walls of the reflective cup to create a void below the solid piece, the solid piece comprising:
a binder;
high thermal conductivity particles, an index of refraction of the binder and an index of refraction of the high thermal conductivity particles being substantially equal, and a thermal conductivity of the high thermal conductivity particles being greater than a thermal conductivity of the binder; and
wavelength conversion particles that convert a wavelength of light emitted by the at least one LED die to a different wavelength,
the wavelength conversion particles and the high thermal conductivity particles being uniformly mixed in the binder;
softening the positioned solid piece to conform to a volume defined by the inner walls of the reflective cup and to encapsulate the at least one LED die to draw heat away from the at least one LED die; and
hardening the softened solid piece after encapsulation of the at least one LED die.

1. A semiconductor light emitting device comprising:
an n-type region;
a p-type region; and
a light emitting region disposed between the n-type region and the p-type region in a double-heterostructure that includes
only a single III-nitride light emitting layer, this light emitting layer being the only layer in the device from which light
is produced when current flows between the n-type and p-type region, wherein:

the light emitting layer has a thickness between 100 Å and 600 Å;
the light emitting layer is devoid of any barrier layer;
at least a portion of the light emitting layer has a graded InN composition; and
a plot of InN composition as a function of distance from the n-type region for the light emitting layer comprises a plurality
of local minima in InN composition.

1. A lighting arrangement comprising:at least one light emitting diode (LED) lighting element arranged on a support member;
an optical element arranged spaced from the LED lighting element in a first direction; and
a holder to hold the optical element in a position relative to the LED lighting element, the holder comprising at least a first holding portion extending from the support member into the first direction and a second holding portion connected to the optical element arranged such that at least a part of the second holding portion extends into the first direction,
wherein the second holding portion is spaced from the first holding portion in a direction traverse to the first direction,
wherein the first holding portion and the second holding portion are connected by a first connecting portion arranged to form an angle with both the first holding portion and the second holding portion,
wherein the first connecting portion is a plane wall element having a greater thickness than the first holding portion and the second holding portion, and
wherein the optical element is one piece with the first holding portion and the second holding portion.

1. A light emitting device, comprising:light emitting elements comprising light emitting top surfaces, and
a pre-formed wavelength conversion element including a sheet of wavelength conversion material attached to the light emitting top surfaces of the light emitting elements, the sheet comprising:
a light extraction top surface, and
at least one reflective side surface that is neither orthogonal nor parallel to the light extraction top surface, the reflective side surface being at a location between at least two light emitting elements, the reflective side surface comprising a lower edge along a perimeter of a light emitting top surface of one of the at least two light emitting elements.

11. A light emitting device having a stack of layers including semiconductor layers comprising an active region, said device
comprising:
a transparent optical element bonded to a surface of the stack by a bonding layer, wherein the bonding layer includes luminescent
material,

wherein a smallest ratio of a length of a base of said optical element to a length of said surface is greater than one, and
wherein the transparent optical element does not extend over sides of the stack of layers.

1. A method comprising:
providing a light emitting device including a semiconductor structure comprising III-nitride light emitting layer disposed
between an n-type region and a p-type region;

mounting the light emitting device on a mount; and
connecting a ceramic layer comprising a wavelength converting material to a surface of the light emitting device from which
light is extracted.

1. A device comprising:a substrate;
a p-type region disposed on the substrate;
an n-type region;
a III-V material light emitting layer, that comprises nitrogen and phosphorus, disposed between the n-type region and the p-type region;
a graded region disposed between the light emitting layer and the n-type region, the graded region including a composition that is graded;
a first contact comprising a mirror and conductive dots embedded in the mirror, the first contact disposed on the substrate; and
a second contact disposed on the n-type region.

1. A lighting device comprising:a) a light converter comprising a light receiving face;
b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm2 at the light receiving face,
wherein the light converter is configured to convert at least part of the light source light into a light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase a photon density of states in the light converter and be resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

1. A method comprising:providing a lead frame that includes at least one carrier element, the carrier element comprising a plurality of conductive regions that are electrically isolated from each other;
attaching contacts of at least one light emitting device (LED) die directly to the conductive regions;
separating the carrier element from the lead frame, wherein only the LED die maintains a spatial relationship between side regions of the conductive regions; and
placing a dielectric material between the conductive regions after the separating the carrier element from the lead frame.

1. A device comprising:a mount comprising first and second metal pads disposed on a surface;
a semiconductor light emitting diode (LED) attached to a first portion of the first and second metal pads; and
a multi-layer reflector disposed on and in direct contact with a second portion of the first and second metal pads, the multi-layer reflector comprising layer pairs of alternating layers of low index of refraction material and high index of refraction material, wherein a portion of the surface is in direct contact with the multi-layer reflector and is non-reflective; and
a lens disposed over the LED and the multi-layer reflector.

1. A method comprising:mounting one or more light emitting diodes (LEDs) on a printed circuit board, the printed circuit board having a first alignment feature;
optically sensing a position of the one or more LEDs mounted on the printed circuit board;
modifying the first alignment feature on the printed circuit hoard, based on the optical sensing of the position of the one or more LEDs, to form a modified alignment feature on the printed circuit board that modifies the space made available by the first alignment feature; and
aligning secondary optics with the one or more LEDs by mounting the printed circuit board on a support surface using the modified alignment feature such that a misalignment of the LEDs on the printed circuit board is offset by the modified alignment feature.

1. A device comprising:a III-nitride light emitting layer disposed between an n-type region and a p-type region; and
a III-nitride layer doped with an acceptor having a concentration that increases linearly across the III-nitride layer such that a concentration of acceptor is higher in a portion of the III-nitride layer doped with an acceptor closer to the light emitting layer than in a portion of the III-nitride layer doped with an acceptor further from the light emitting layer, the III-nitride layer doped with an acceptor being positioned such that the n-type region is disposed between the III-nitride layer doped with an acceptor and the light emitting layer.

1. A process for the production of a light converter comprising a siloxane polymer matrix with light converter nano particles embedded therein, the process comprising:mixing light converter nano particles having an outer surface grafted with grafting ligands and the curable siloxane polymers, and
curing the curable siloxane polymers, thereby producing the light converter;
wherein the grafting ligands comprise siloxane grafting ligands having x1 Si backbone elements, wherein at least one Si backbone element of each siloxane grafting ligand comprises a side group having a grafting functionality;
wherein the curable siloxane polymers have y1 Si backbone elements;
wherein x1 is at least 20, wherein y1 is at least 2, and wherein x1/y1>1.

1. A system comprising:a light source;
a converter configured to convert an AC voltage to a DC operating voltage during normal operation;
a power backup device coupled to the converter;
a current source having a first terminal configured to receive the DC operating voltage during regular operation and a second terminal configured to provide a pulse-width modulated (PWM) signal to an anode end of the light source; and
a switching device having a first connecting terminal coupled to the anode end of the light source, a second connecting terminal coupled to the power backup device, and a control terminal coupled to the converter,
the switching device configured to open a switch between the first connecting terminal and the second connecting terminal during normal operation and close the switch upon detecting an interruption of the DC operating voltage at the control terminal.

1. A light emitting device comprising:a support structure;
a light emitting diode (LED) die mounted on the support structure,
the LED die having a top surface and at least one side surface and comprising LED semiconductor layers and a transparent substrate, the substrate comprising the top surface of the LED die so that the LED die has anode and cathode electrodes on a bottom surface, the substrate being thicker than the LED semiconductor layers, wherein light emitted from the side surfaces is at least 30% of all light emitted by the LED;
a phosphor layer covering the top surface and side surfaces;
a reflector surrounding the LED die, the reflector having curved surfaces surrounding the LED die, wherein the curved surfaces extend from a generally rectangular opening for the LED die and reflect the light from the side surfaces of the LED die to form a generally rectangular beam; and
a generally rectangular lens affixed to walls of the reflector, the lens having a generally rectangular convex surface extending toward the LED die and a flat top surface facing away from the LED die.

1. A structure comprising:a semiconductor light emitting device; a wavelength-converting layer disposed over the semiconductor light emitting device; and
a light-scattering layer disposed over the wavelength-converting layer, the light-scattering layer including a phase-changing material suspended in a binding material, the phase-changing material being arranged to transition from a solid phase into a liquid phase when the light-scattering layer is heated by the semiconductor light emitting device, the phase-changing material having a lower index of refraction in the liquid phase then in the solid phase.

1. A method comprising:providing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the semiconductor structure having a first surface and a second surface opposite the first surface;
forming a plurality of cavities in the first surface of the semiconductor structure, the plurality of cavities being spaced apart and extending into at least one of the n-type region and the p-type region;
roughening at least a portion of the second surface to form a plurality of features spaced apart at least a distance smaller than a distance between each of the plurality of cavities formed in the first surface;
lining the plurality of cavities with a dielectric layer;
forming at least one contact in contact with the first surface of the semiconductor structure; and
providing the semiconductor structure on a substrate such that the first surface of the semiconductor structure is adjacent the substrate.

1. A light emitting device comprising:a light emitting diode (LED) die having a plurality of electrodes formed thereon;
a mounting substrate having a patterned metal layer defining at least one metal bond pad;
a dielectric solder mask layer disposed on the at least one metal bond pad of the mounting substrate, the mask layer having a plurality of openings that expose portions of the at least one bond pad, the mask layer being formed of a reflective material that reflects at least 90% of visible light and restricts deposited molten solder to the plurality of openings;
solder disposed in the plurality of openings of the mask layer and in contact with the at least one metal bond pad of the mounting substrate and respective electrodes of the plurality of electrodes of the LED die such that the at least one metal bond pad of the LED die is soldered to the at least one other metal bond pad, wherein the mask layer completely surrounds the LED die and is disposed under the LED die between the plurality of electrodes to reflect light;
a pre-formed ring that is affixed to the solder mask layer, the ring having reflective internal walls that extend above the height of the first LED die and surround the LED die;
a wavelength conversion material at least partially filling the ring such that the wavelength conversion material covers the LED die and a portion of the mask layer; and
a lens disposed over the LED die that separates the wavelength conversion layer from the LED die.

1. A device comprising:a window layer;
a light-directing structure comprising a porous semiconductor layer formed in an n-type region, the light-directing structure configured to direct light toward the window layer;
a semiconductor structure, disposed between the window layer and the light-directing structure, comprising a light emitting layer disposed between the n-type region and a p-type region;
an opening formed in the semiconductor structure;
a first metal layer in direct contact with the light-directing structure;
a dielectric layer disposed over a first portion of the first metal layer and in the opening;
a second metal layer disposed over the dielectric layer;
a transparent conductive oxide disposed between the p-type region and the window layer and in direct contact with the p-type region;
a first hole formed in the dielectric layer, wherein the first hole exposes the transparent conductive oxide such that the second metal layer is in direct contact with the transparent conductive oxide through the first hole; and
a second hole formed in the dielectric layer, such that a second portion of the first metal layer is over the dielectric layer and in direct contact with the first portion of the first metal layer in the second hole.

1. A light emitting structure comprising:LEDs that are electrically isolated from each other and arranged in an array, each LED comprising:
a light emitting active region disposed between an n-type region and a p-type region;
an L-shaped first type contact layer disposed on and electrically connected to one of the p-type region and n-type region; and
an inverted L-shaped second type contact layer disposed on and electrically connected to one of the p-type region and n-type region not connected to the L-shaped first type contact layer, the L-shaped second type contact layer arranged in an interlocking manner with the L-shaped first type contact layer,
wherein two of the LEDs are arranged in a first orientation; and
the remaining LEDs are arranged in a second orientation inverted from the first orientation.

1. A light emitting device, comprising:a light emitting structure, comprising:
a light extraction surface, comprising:
an undoped template layer devoid of islanding growth;
a first conductive semiconductor layer on the undoped template layer, the first conductive semiconductor layer being devoid of islanding growth and less durable to etching than the undoped template layer; and
etching features extending into the undoped template layer and the first conductive semiconductor layer, wherein a topology of the etching features at the undoped template layer is sharper than a topology of the etching features at the first conductive semiconductor layer;
an active layer on the first conductive semiconductor layer;
a second conductive semiconductor layer on the active layer, the second conductive semiconductor layer being an opposite polarity as the first conductive semiconductor layer; and
N and P-type contacts on a same surface opposite the light extraction surface.

1. Optical lens package having a lens body comprising a base, a central surface section opposite to the base, an optical axis and a peripheral surface section extending between the central surface section and the base,said central surface section at least partly having a convex shape in at least a first cross-sectional plane including the optical axis,
wherein the central surface section is centered with respect to the optical axis of the lens package;
wherein, at a location of a transition of the peripheral surface section into the central surface section, at least a portion of said peripheral surface section has a concave shape in at least said first cross-sectional plane;
wherein, when a light source is arranged at a designated position on the optical axis,
the central surface section is configured to collimate light received from the light source at a smaller angle with respect to the optical axis than an angle of the light collected by the concave shaped portion of the peripheral surface section with respect to the optical axis, and
the concave shaped portion is configured to spread the light collected by it from the light source.

1. A control circuit for a light emitting diode (LED) lighting system for achieving a dim-to-warm effect between a minimum brightness-maximum dimming level, and a maximum brightness-minimum dimming level, the control circuit comprising:a clamp circuit coupled to a set of warm correlated-color-temperature (“CCT”) LEDs;
a switch coupled to a set of cool CCT LEDs;
an LED controller configured to:
control the clamp circuit to clamp current through the set of warm CCT LEDs to a clamp current level based on an input current; and
a feedback circuit coupled to the clamp circuit and switch, the feedback circuit being configured to cause the clamp circuit to divert current from the set of warm CCT LEDs to the set of cool CCT LEDs in response to the input current exceeding a second threshold level.

1. A light emitting device comprising:a substrate;
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region and having a first surface adjacent the substrate and a second surface opposite the first surface, the first surface having a plurality of cavities formed therein and extending into at least one of the n-type region and the p-type region, the plurality of cavities being spaced apart and lined by a dielectric layer, at least a portion of the second surface is roughened to form a plurality of features spaced apart at a distance smaller than a distance between each of the plurality of cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer; and
at least one contact disposed between the first surface of the semiconductor structure and the substrate.

1. A light emitting device comprising:
light emitting diode (LED) semiconductor layers generating light, the LED semiconductor layers having a light emitting surface;
a substrate overlying the light emitting surface and affixed to the LED semiconductor layers; and
one or more light scattering areas formed within the substrate,
wherein the device comprises inactive areas in the LED semiconductor layers that do not generate light and LED semiconductor
layers areas that generate light, wherein the one or more light scattering areas are located over at least one of the inactive
areas that do not generate light,

wherein the one or more light scattering areas are not substantially formed over the LED semiconductor layers areas that generate
light, and

wherein at least one of the one or more light scattering areas is formed overlying a light absorbing area within or underlying
the LED semiconductor layers.

1. A method, comprising:providing a wafer comprising a plurality of semiconductor light emitting devices, each light emitting device comprising an active region disposed between an n-type region and a p-type region, and a metal bonding layer coupled to an exposed portion of the n-type region;
disposing a first material comprising a dielectric layer on the wafer, including disposing a portion of the dielectric layer directly on a first area of the exposed portion of the n-type region that is located between two semiconductor light emitting devices;
disposing a second material comprising an underfill in areas between the wafer and a mount, including disposing the underfill directly on (1) the portion of the dielectric layer and (2) a second area of the exposed portion of the n-type layer, the portion of the dielectric layer improving adhesion of the underfill to the exposed portion of the n-type layer; and
attaching the wafer to the mount.

1. A light emitting device, comprising:light emitting elements comprising light emitting top surfaces, and
a pre-formed wavelength conversion element including a sheet of wavelength conversion material attached to the light emitting top surfaces of the light emitting elements, the sheet comprising:
a light extraction top surface, and
at least one reflective side surface that is neither orthogonal nor parallel to the light extraction top surface, the reflective side surface being at a location between at least two light emitting elements, the reflective side surface comprising a lower edge along a perimeter of a light emitting top surface of one of the at least two light emitting elements.

1. A method comprising:growing a III-nitride layer with a bulk lattice constant alayer on a non-III-nitride growth substrate with an in-plane lattice constant asubstrate such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%;
providing a composite substrate comprising the III-nitride layer bonded to a host substrate; and
growing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region on the III-nitride layer of the composite substrate.

1. A method of manufacturing a light emitting device comprising:applying an adhesive to a portion of a ceramic phosphor plate, wherein the portion of the ceramic phosphor plate has a smaller surface area than a surface area of the ceramic phosphor plate;
forming a gap between a light emitting diode and the ceramic phosphor plate by affixing the ceramic phosphor plate to the light emitting diode using the adhesive applied to the portion of the ceramic phosphor plate; and
filling the gap with a transparent material by atomic layer deposition.

1. A method comprising:partially activating a p-type region in a group III-nitride structure comprising a light emitting layer disposed between an n-type region and the p-type region;
after partially activating the p-type region, forming a metal p-contact on the p-type region, the metal p-contact comprising:
a reflective first metal;
a second metal; and
a blocking material disposed over a first portion of the p-type region and no blocking material is disposed over a second portion of the p-type region; and
after forming the metal p-contact, further activating the p-type region such that the first portion is less conductive than the second portion.

1. A light-emitting device, comprising:a semiconductor structure, including a first conductivity layer, an active layer, and a second conductivity layer, the semiconductor structure having a bottom surface and a top surface;
a first electrode opposing the bottom surface and electrically connected to the first conductivity layer, the first electrode having a first sidewall;
a second electrode opposing the bottom surface and electrically connected to the second conductivity layer, the second electrode having a second sidewall facing the first sidewall;
a dielectric layer formed on at least one of the first sidewall and the second sidewall; and
a metal layer arranged to at least partially fill a gap between the first sidewall of the first electrode and the second sidewall of the second electrode, the metal layer being electrically insulated from at least one of the first sidewall and the second sidewall by the dielectric layer.

1. A light emitting diode (LED) light system comprising:a plurality of LED devices;
a driver circuit electrically coupled to the plurality of LED devices; and
a dimmer switch interface comprising:
a transformer having a first winding and a second winding, the first winding being electrically coupled to at least one input terminal to receive a dimmer input voltage, the second winding being electrically coupled to the driver circuit to provide a dimmer output voltage, to the driver circuit, based on the dimmer input voltage, and the first winding being magnetically coupled to the second winding,
a current source electrically coupled to the second winding, and
a control circuit communicatively coupled to the current source and configured to:
detect the dimmer output voltage,
on a condition that the dimmer output voltage is below a threshold, determine that a dimmer switch is in a standby mode, and
on a condition that the dimmer switch is in the standby mode, provide a control signal to the current source, the control signal having a cycle comprising a first portion during which the control signal has a first duty cycle and a second portion during which the control signal has a second duty cycle greater than the first duty cycle.

1. A method comprising:providing a flexible substrate including a patterned conductive layer comprising a first conductive strip and a second conductive strip, the first conductive strip and second conductive strip each comprising a plurality of parallel strips;
mounting a first light emitting device (LED) and a second LED adjacent to the first LED on the flexible substrate with a first spacing between the first LED and the second LED such that conductive pads of the first LED and the second LED are mounted onto a same first set of parallel strips of the first and second conductive strips; and
mounting a third LED and a fourth LED adjacent to the third LED on the flexible substrate with a second spacing between the third LED and the fourth LED, such that conductive pads of the third LED and the fourth LED are mounted onto a same second set of parallel strips of the first and second conductive strips where the first set of parallel strips is different than the second set of parallel strips.

1. A lighting module comprising:a first plurality of light emitting elements that emit a first color;
a second plurality of light emitting elements that emit a second color;
a substrate upon which the first and second pluralities of light emitting elements are arranged; and
an encapsulation layer that includes a first encapsulant positioned over each of the light emitting elements of the first plurality of light emitting elements and a second encapsulant positioned over each of the light emitting elements of the second plurality of light emitting elements and comprising a plurality of domes, the first encapsulant further includes a concentration of wavelength conversion material that is substantially greater than a concentration of wavelength conversion material in the second encapsulant and fills regions between the domes.

1. A light emitting assembly comprising:a light emitting structure with a first light emission surface comprising one or more point-like light sources, preferably light-emitting diodes, to emit light from the first light emission surface;
a transparent beam shaping structure comprising a second light emission surface and a second light receiving surface opposite to the second light emission surface, wherein the second light receiving surface is arranged at a distance, preferably of 20-30 ?m, above the first light emission surface in order to create an air gap between the first light emission surface and the second light receiving surface to receive light emitted from the light emitting structure within an acceptance angle ? for the beam shaping structure to shape a resulting beam of light being emitted through the second light emission surface; and
one or more transparent light guiding elements arranged between the beam shaping structure and the light emitting structure being suitably shaped to refract at least a part of light which is emitted from the first light emission surface under an emergent angle ? larger than the acceptance angle ? towards the beam shaping structure,
wherein at least one light guiding element comprises a third light emission surface being in contact with the second light receiving surface of the beam shaping structure, a contact surface being in contact with the first light emission surface of the light emitting structure, and a third light receiving surface towards the air gap connecting the third light emission surface with the contact surface;
wherein the at least one light guiding element has a conical shape with the third light emission surface having a larger size than the contact surface and with an angle ? established between the third light receiving surface and the third light emission surface; and
wherein also the beam shaping structure has a conical shape with a side face between second light receiving surface and the second light emission surfaces and an angle ? established between a direction perpendicular to the second light receiving surface and the side face.

1. A method of separating a wafer comprising a plurality of rows and columns of light emitting devices, the method comprising:dividing the wafer into a plurality of regions, each of the plurality of regions including at least one of the plurality of rows of light emitting devices and one or more features each having a known location in the wafer;
using the known locations of the one or more features to identify a best-fit line defining a border between each of the plurality of regions;
interpolating between adjacent best-fit lines to identify locations for dicing streets within each of the plurality of regions;
dividing a distance between Y-intercepts of the adjacent best-fit lines by a number of rows of LEDs between the adjacent best-fit lines to determine a distance between Y-intercepts of each of the dicing streets;
providing a plurality of dicing streets on the wafer such that a respective dicing street of the plurality of dicing streets is provided between each of the plurality of rows of light emitting devices on the wafer;
breaking the wafer along the plurality of dicing streets to separate the wafer in a pattern.

12. A device comprising:a semiconductor light emitting structure having a light emitting layer and having a first light extraction surface;
a wavelength converting element disposed on the semiconductor light emitting structure, a top surface of the wavelength converting layer having a substantially same area as the first light extraction surface; and
a second structure disposed on the wavelength converting element above the first light extraction surface, the second structure having a second light extraction surface;
a surface area of the second light extraction surface being less than the top surface of the wavelength converting layer; and
reflective material disposed along the sidewalls of the light emitting layer, the wavelength converting element, and the second structure as well as any exposed portion of the first light extraction surface and the wavelength converting element.

1. A light emitting device comprising:a substrate, the substrate having a first surface and a second surface opposite the first surface, the first surface forming a first outer surface of the light emitting device:
a light emitting element configured to emit light having a first wavelength, the light emitting element being disposed adjacent the second surface of the substrate;
a ceramic wavelength conversion element formed from a first wavelength conversion material that converts light incident thereon from the light emitting element to light having a second wavelength different from the first wavelength, the ceramic wavelength conversion element having a first surface adjacent the light emitting element and a second surface opposite the first surface;
a layer of adhesive material disposed between the light emitting element and the first surface of the ceramic wavelength conversion element;
a coating of a second wavelength conversion material disposed on the second surface of the ceramic wavelength conversion element, the second wavelength conversion material converting light incident thereon to light having a third wavelength different from the first wavelength and the second wavelength and having a first surface adjacent the ceramic wavelength conversion element and a second surface opposite the first surface; and
a continuous layer of sacrificial material having a first surface, a second surface opposite the first surface, and a plurality of side surfaces, the first surface of the sacrificial material forming a second outer surface of the light emitting device, the second surface of the sacrificial material being disposed in direct contact with the second surface of the coating of the second wavelength conversion material, and the sacrificial material being transparent to light having the first, second and third wavelengths.

1. A method comprising:disposing a reflective foil on a substrate, the reflective foil having an opening;
disposing a semiconductor light emitting device on the substrate, the semiconductor light emitting device being disposed in the opening of the reflective foil;
forming an optical element over the semiconductor light emitting device such that the reflective foil is in contact with a full length of a base of the optical element; andremoving the semiconductor light emitting device from the substrate.

1. A light emitting structure, comprising:a light emitting device comprising:
a light emitting element having a light emitting surface,
a reflector having a reflective surface opposite the light emitting surface, and
a spacer element that separates the reflective surface from the light emitting surface, wherein the spacer element has a thickness that provides a separation distance between the reflective surface and the light emitting surface such that at least half of the light emitted from the device is emitted at an angle greater than 90 degrees from a normal to the light emitting surface toward the reflector, and
a reflective substrate upon which the light emitting element is situated, the reflective substrate being at least five times larger than the reflector.

1. A method, comprising:growing a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
etching away a portion of the p-type region and the light emitting layer to expose a portion of the n-type region;
forming an n-contact on the exposed portion of the n-type region;
forming a metal bonding layer over the n-contact;
disposing a passivation layer over an outer side of the metal bonding layer, an outer side of the n-contact, and on top of the exposed portion of the n-type region; and
disposing and underfill beneath the semiconductor structure, including over an outer side of the passivation layer, the passivation layer and the underfill forming a seal at a sidewall of the semiconductor structure.

1. A light emitting structure, comprising:a light emitting device comprising:
a light emitting element having a light emitting surface,
a reflector having a reflective surface opposite the light emitting surface, and
a spacer element that separates the reflective surface from the light emitting surface, wherein the spacer element has a thickness that provides a separation distance between the reflective surface and the light emitting surface such that at least half of the light emitted from the device is emitted at an angle greater than 90 degrees from a normal to the light emitting surface toward the reflector, and
a reflective substrate upon which the light emitting element is situated, the reflective substrate being at least five times larger than the reflector.

1. A method of manufacturing a silicone product comprising immobilized luminescent material, the method comprises the steps of:obtaining a first mixture comprising a homogeneous mixture of (1) filler particles of a light transmitting inert material and (2) a luminescent material comprising luminescent particles showing quantum confinement and having at least in one dimension a size in the nanometer range,
obtaining a second mixture from the first mixture by flocculating the luminescent particles on surfaces of the filler particles, wherein the filler particles are distributed in the second mixture so at least 60% of the luminescent particles are separated from other luminescence particles by at least a distance of 7 nanometers, and
obtaining a third mixture by mixing the second mixture with a polymeric material comprising a material of the group of polysiloxanes.

1. An illumination device comprising:a light guide shaped as a ring having a central opening, the light guide having light extraction features on a light exit surface of the light guide;
a first printed circuit board including first conductors and having a first reflective surface for reflecting light propagating through the light guide, the first printed circuit board electrically connecting a first light emitting diode (LED) to the first conductors;
at least a first portion of the first printed circuit board and the first LED being encapsulated in the light guide;
and
the light guide internally reflecting light from the first LED within the light guide until emitted through the light exit surface.

1. A light emitting device comprising:light emitting diode (LED) semiconductor layers comprising an N-type layer, an active layer configured to emit a primary light, and a P-type layer; and
luminescent sapphire distinct from a growth substrate for the semiconductor layers, the luminescent sapphire being affixed over a light emitting surface of the LED semiconductor layers,
the LED semiconductor layers and the luminescent sapphire forming part of an LED die, the luminescent sapphire containing oxygen vacancies resulting in F-like centers having defined optical absorption and luminescence emission bands,
the luminescent sapphire configured to absorb a portion of the primary light and down-converts the primary light to emit secondary light, via the F-like centers, such that an emission from the LED die includes at least a combination of the primary light and the secondary light.

1. A method of color error correction for a segmented LED array, the method comprising:(a) calculating a target luminance for LED segments in a segmented LED array based on an initial luminance pattern;
(b) determining a luminance ratio based on the target luminance, the luminance ratio defined as a ratio of a primary luminance value of the primary LED segment to a secondary luminance value of the at least one adjacent LED segment;
(c) comparing the luminance ratio to a predefined threshold ratio, and
(i) if the luminance ratio is greater than or equal to the predefined ratio, then the secondary luminance value of the at least one adjacent LED segment is maintained, or
(ii) if the luminance ratio is less than the predefined ratio, then the secondary luminance value of the at least one adjacent LED segment is increased.

1. A light emitting device (LED) comprising:a light emitting semiconductor structure comprising a light-emitting active layer disposed between an n-layer and a p-layer;
a wavelength converting material having a first surface adjacent the light emitting semiconductor structure and a second surface opposite the first surface; and
an off state white material in direct contact with the second surface of the wavelength converting material, the off state white material comprising a plurality of core-shell particles disposed in an optically functional material, each of the core shell particles comprising a core material that includes a phase change material encased in a polymer or inorganic shell.

1. A method for growing a light emitting device, the method comprising:growing a light emitting device structure on a growth substrate, the light emitting device structure including a n-type region, a light emitting region and a p-type region stacked together; and
growing at least a portion of a layer of a tunnel junction on the light emitting device structure by using at least one of remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition in at least a reduced hydrogen environment that does not cause inoperability of at least the p-type region,
the light emitting device structure being grown on the growth substrate using a non-RP-CVD and non-sputtering deposition process.

1. A lighting device, comprising:a light emitting diode comprising contact pads at a surface opposite to a light emitting surface;
a mounting assembly, comprising:
a lead frame comprising:
at least two metal plates each having a top surface and a bottom surface, the metal plates being disposed in one plane and comprising opposing shoulders so top surfaces of the metal plates are disposed in a first distance (d1) apart and bottom surfaces of the metal plates are disposed in a second distance (d2) apart that is larger than the first distance (d1);
a top contact area or a top contact pad formed at the top surface of each of the metal plates, the top contact areas or the top contact pads being laminarly connected to the corresponding contact pads of the light emitting diode; and
a bottom contact area or a bottom contact pad formed at the bottom surface of each of the metal plates;
a dielectric layer disposed on the top surfaces of the metal plates and surrounding the electrical device, the dielectric layer forming a carrier for the metal plates to provide a rigid housing; and
a mounting board comprising a printed circuit board or a ceramic board, the mounting board having top contact pads laminarly connected to the corresponding bottom contact areas or the corresponding bottom contact pads of the lead frame.

1. A light emitting device comprising:a hexagonal oxide substrate; and
a III-nitride semiconductor structure adjacent the hexagonal oxide substrate, the III-nitride semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the hexagonal oxide substrate having an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure, and the n-type region having a thickness between 0.5 ?m and 2.0 ?m.

1. A structure comprising:a semiconductor light emitting device; and
a wavelength converting region comprising:
a nanostructured wavelength converting material configured to absorb pump light and emit converted light, the nanostructured wavelength converting material comprising particles having at least one dimension that is no more than 100 nm in length;
a phosphor in direct contact with the nanostructured wavelength converting material;
a reflector configured to be more reflective of pump light and less reflective of converted light; and
a transparent matrix in which the nanostructured wavelength converting material is disposed;
wherein a spacing between the wavelength converting region and the semiconductor light emitting device is greater than 0 mm and no more than 10 mm.

1. A light emitting device comprising:a support structure;
a light emitting diode (LED) die mounted on the support structure,
the LED die having a top surface and at least one side surface and comprising LED semiconductor layers and a transparent substrate, the LED semiconductor layers having a thickness and the transparent substrate having a thickness, the substrate comprising the top surface of the LED die, a ratio of substrate thickness to the LED semiconductor layers thickness being 2 or greater and the ratio of the area of the side surface to the area of the top surface being 1 or greater;
a phosphor layer covering the top surface and side surfaces;
a reflector surrounding the LED die, the reflector having curved surfaces surrounding the LED, wherein the curved surfaces extend from a generally rectangular opening for the LED die and reflect the light from the side surfaces of the LED die to form a generally rectangular beam;
a generally rectangular lens affixed to walls of the reflector, the lens having a generally rectangular convex surface extending toward the LED die and a flat top surface facing away from the LED die; and
a thickness from a bottom surface of the support structure to the flat top surface of the lens being 2 mm or less.

1. A process for the production of a wavelength converter comprising a siloxane polymer matrix with wavelength converter nanoparticles embedded therein, the process comprising:grafting siloxane grafting ligands to wavelength converter nanoparticles to form grafted wavelength converter nanoparticles;
mixing short chain siloxane polymers with the grafted wavelength converter nanoparticles to form a first liquid having grafted wavelength converter nanoparticles dispersed in the short chain siloxane polymers, wherein the short chain siloxane polymers are non-grafting ligands;
mixing the first liquid with curable siloxane polymers, wherein the curable siloxane polymers are non-grafting ligands; and
curing the curable siloxane polymers, thereby producing the wavelength converter comprising the short chain siloxane polymers and the curable siloxane polymers that do not graft onto the grafted wavelength converter nanoparticles;
wherein the short chain siloxane polymers have s1 Si backbone elements,
wherein the siloxane grafting ligands comprise siloxane grafting ligands having x1 Si backbone elements, wherein at least one non-terminal Si backbone element of each siloxane grafting ligand comprises a side group having a grafting functionality; and wherein the curable siloxane polymers have y1 Si backbone elements;
wherein x1/s1?0.8, s1

1. A vehicle comprising a lighting assembly for use in a lighting arrangement of a vehicle, comprising:a projection lens; and
an array of light sources, wherein the projection lens and the array are arranged according to an asymmetry displacement of the optical axis of the projection lens, and wherein the projection lens is positioned to receive and project light from each of the light sources of the array, wherein the assembly is configured such that the asymmetry displacement comprises a non-zero fixed angle between a longitudinal axis of the vehicle and the optical axis of the projection lens, wherein the light sources of the array of the lighting assembly are individually controllable to adjust a swivel angle of a light beam generated by the lighting assembly, and wherein the projection lens is distinct from an outer transparent cover that covers said lighting assembly and that is disposed between the assembly and the outside of the vehicle.

1. Headlight unit including:a reflector with a reflector neck;
a lamp mounting cavity provided at said reflector neck;
a lamp mounted within said lamp mounting cavity;
an outer reflector housing with a cylindrical wall and a peripheral portion extending from said cylindrical wall, said peripheral portion being in contact with said reflector, said cylindrical wall being around said reflector neck to form concentric rings; and
a cap integrally formed in a single piece of at least partly flexible material devoid of any additional sealing element for fixing said cap, wherein:
said cap extends to and flexibly surrounds said cylindrical wall to close off said lamp mounting cavity sealing said mounting cavity against dust and moisture,
said cap is dismountable from said cavity separate from said lamp,
said cap is provided as a heat spreader and dissipation element in thermal contact with said lamp, and
said cap has a thermal conductivity of more than 50 W/mK.

1. A light-emitting device, comprising:a substrate;
a semiconductor structure disposed on the substrate, the semiconductor structure having an active region disposed between an n-type layer and a p-type layer;
a wavelength converter formed above the substrate;
an insulating side coating formed around the semiconductor structure; and
a reflective side coating formed around the wavelength converter and the substrate, the reflective side coating being stacked over the insulating side coating, the reflective side coating having a top surface that is flush with a top surface of the wavelength converter, and the reflective side coating having a bottom surface that is disposed above a top surface of the insulating side coating.

1. A device comprising: a substrate comprising lithium, the substrate having a first surface and a second surface opposite the first surface; and a semiconductor structure comprising a light emitting layer, the semiconductor structure having a first surface and a second surface opposite the first surface, the first surface of the semiconductor structure disposed adjacent the first surface of the substrate, at least a portion of the second surface of the substrate is shaped into at least one truncated pyramid, each truncated pyramid including four outer walls, each of the four outer walls of each truncated pyramid being angled toward a center of the truncated pyramid and adjoining two adjacent side walls of the same truncated pyramid at respective edges, wherein an intersecting notch is formed in each of the respective edges, each intersecting notch having side walls that form an angle between 600 and 750 relative to the second surface of the semiconductor structure.

1. A light-emitting device, comprising:a light emitting diode (LED) die mounted on a substrate; and
a solid molded lens surrounding the LED die, the lens having a width that is smaller than a width of the substrate, the lens being affixed to the substrate via an adhesive material, and the lens having a non-flat bottom surface including:
(a) a plurality of angled first surface portions arranged to define a first continuous groove that surrounds the LED die and a second continuous groove that surrounds both the LED die and the first continuous groove, the plurality of angled first surfaces arranged over a substantially flat portion of the substrate; and
(b) a second surface portion surrounding the LED die that is substantially parallel to the substrate, the second surface portion being affixed to the substrate via the adhesive material, the second surface portion being situated between the first continuous groove and the second continuous groove; and
a gap between the plurality of angled first surfaces arranged and the substantially flat portion of the substrate.

1. An apparatus comprising:a light guide including a rear portion, the rear portion including a first edge, a second edge, and a rear edge, the first edge meeting the rear edge at a first obtuse angle, and the second edge meeting the rear edge at a second obtuse angle; and
a plurality of light emitting diodes (LEDs) disposed on the first edge, the second edge, and the rear edge, the plurality of LEDs being arranged to produce an asymmetric light distribution pattern including a rear light emission and a forward light emission, the forward light emission having a greater peak intensity than the rear light emission.

1. A method comprising:providing luminescent quantum dots with an inorganic capping agent in a starting liquid;
precipitating in a co-precipitation process an inorganic salt comprising precipitated material from the starting liquid, the precipitated material comprising said quantum dots hosted by the co-precipitated inorganic salt; and
separating in a separation process the precipitated material from the starting liquid to thereby provide a luminescent material.

1. A device comprising:a light emitting device comprising a substrate and a semiconductor structure comprising a light emitting layer;
a first reflective layer contacting and conforming to side surfaces of the substrate and semiconductor structure to laterally surround the light emitting device;
a wavelength converting element disposed over the light emitting device, the wavelength converting element having a top surface and sidewalls, the top surface of the wavelength converting element being higher than the top surface of the first reflective layer; and
a second reflective layer disposed adjacent a first sidewall of the wavelength converting element, but not over the top surface or a second sidewall of the wavelength converting element, such that the majority of light exits the top surface of the wavelength converting element and a majority of light impinging on the second reflective layer is reflected back into the wavelength converting element.

1. A light-emitting device, comprising:an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain;
a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer.

1. A device comprising:a III-nitride semiconductor structure comprising:
an n-type layer comprising a textured surface having a cross sectional profile of peaks alternating with valleys;
a light emitting layer with at least partial strain relief grown over the textured surface, the light emitting layer with at least partial strain relief comprising islands formed on the peaks, the islands expanding laterally to provide the at least partial strain relief.

1. A side strip for supporting a side of a filtering member of a filter, the filtering member having a plurality of folds, the strip comprising:a plurality of first creases protruding from a first surface of the strip and distributed along a first longitudinal side of the strip; and
a plurality of second creases protruding from the first surface of the strip and distributed along a second longitudinal side of the strip;
wherein the first creases of the strip fit between neighboring peaks of the folds of the filtering member, and the second creases of the strip fit between neighboring bottoms of the folds of the filtering member,
wherein the plurality of first creases are able to extend, and the plurality of second creases are able to shrink, such that the strip is bendable towards the second longitudinal side, and
wherein the cross-section of each of the plurality of first creases decreases from the first longitudinal side to the second longitudinal side, and the cross-section of each of the plurality of second creases decreases from the second longitudinal side to the first longitudinal side.

1. A light emitting diode (LED) bulb for emitting at least two levels of light having different emission patterns and comprising a light emitting structure, the light emitting structure comprising:a plurality of first light emitting diode (LED) dies, each of the first LED dies having a first electrode and a second electrode, wherein the first electrode of each of the first LED dies is electrically and thermally coupled to a lead frame;
a plurality of second LED dies, each of the second LED dies having a third electrode and a fourth electrode, wherein the third electrode of each of the second LED dies is electrically and thermally coupled to the lead frame;
a plurality of third LED dies, each of the third LED dies having a fifth electrode and a sixth electrode, wherein the fifth electrode of each of the third LED dies is electrically and thermally coupled to the lead frame,
wherein, on the lead frame, the second LED dies and the third LED dies are both spaced away from the first LED dies, and
wherein the lead frame is configured so that light emitting top surfaces of the first LED dies face a first direction, light emitting top surfaces of the second LED dies face a second direction, and light emitting top surfaces of the third LED dies face a third direction, the first direction being different from the second and third directions, and the second and third directions being opposite to each other; and
wherein portions of the lead frame terminate in connectors extending from a thermally conductive thermoplastic body, wherein the thermally conductive thermoplastic body comprises:
first light blocking features for the first LED dies to cause the first LED dies to have a first emission pattern; and
second light blocking features for the second and third LED dies to cause the second and third LED dies to have a second emission pattern different from the first emission pattern, wherein
the first light blocking features comprise:
at least one lateral light blocking wall for the first LED dies;
at least one light blocking surface for the first LED dies; and
the second light blocking features comprise:
at least one light blocking surface for each of the second and third LED dies; and
the thermally conductive thermoplastic body comprises:
a front portion that blocks forward light from the first LED dies and the second and third LED dies.

1. A method comprising:growing a III-nitride structure grown on a substrate, the III-nitride structure comprising a light emitting layer disposed between an n-type region and a p-type region, wherein the III-nitride structure comprises a region including only ternary, quaternary, and/or quinary III-nitride layers and the region including only ternary, quaternary, and/or quinary IIInitride layers is thicker than 2 ?m and growing a base region disposed between the substrate and the light emitting layer, the base region comprising a first layer proximate the substrate and a second layer proximate the light emitting layer wherein the net polarization-induced charge at the interface of the first layer and the second layer is zero, the first layer is a quaternary layer AlxInyGa1-x-yN between 3 and 1000 nm, and the second layer is a quaternary layer AlxInyGa1-x-y N of a different composition than the first layer;
attaching the III-nitride structure to a mount; and
removing the substrate, wherein:
the substrate is RA03(MO)n, where R is one of a trivalent cation, Sc, In, Y, and a lanthanide; A is one of a trivalent cation, Fe (III), Ga, and AI; M is one of a divalent cation, Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1;the substrate has an in-plane lattice constant asubstrate;at least one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer; and
[(1 asubstrate?alayer|)/asubstrate]*100% is no more than 1%.

1. A device, comprising:a metallic substrate defining a plurality of openings, the openings having a first area, the openings forming:
one or more heat dissipating elements having a second area;
a plurality of sites on a surface of the one or more heat dissipating elements, each site being configured to receive a light emitting element; and
a plurality of conductor elements having a third area, the conductor elements being physically separated from the one or more heat dissipating elements by the openings, the conductor elements being configured to enable electrical connections to the light emitting elements, the conductor elements being electrically isolated from the one or more heat dissipating elements, the second area comprising greater than 50% of a total area of the metallic substrate comprising the first, the second, and the third areas.

21. A device comprising:a light emitting diode (LED) die comprising a top surface and semiconductor layers including an active region, the LED die having a top layer with a refractive index nLED; and
a discrete and premade transparent optical element comprising a substantially flat bottom surface bonded to a top surface of the LED die, the transparent optical element having a refractive index nlens, where nLED?lens; and
a bonding layer disposed between the top surface of the LED die and the bottom surface of the transparent optical element.

1. A device comprising:a semiconductor light emitting device;
a ceramic layer comprising a first wavelength converting material disposed over the semiconductor light emitting device;
a glass layer disposed directly on and contacting the semiconductor light emitting device; and
a second wavelength converting material disposed over the semiconductor light emitting device.

1. A method comprising:forming a plurality of wavelength converting elements, said forming comprising:
forming a first wavelength converting layer, the first wavelength converting layer being a wavelength converting ceramic,
forming a second wavelength converting layer, the second wavelength converting layer including a wavelength converting material mixed in a binder material;
fusing the second wavelength converting layer to the first wavelength converting layer to produce a composite sheet that includes the first wavelength converting layer and the second wavelength converting layer, and
dicing the composite sheet to form the plurality of wavelength converting elements, the dicing being performed after the first wavelength converting layer and the second wavelength converting layer are fused; and
attaching each of the wavelength converting elements to a different one of a plurality of semiconductor light emitting devices such that, for each of the wavelength converting elements, the first wavelength converting layer is disposed between the second wavelength converting layer and the semiconductor light emitting devices.

1. A device comprising:a semiconductor structure comprising a light emitting layer disposed between an upper region having a first conductivity and a lower region having a second conductivity opposite the first conductivity;
a top contact disposed on a top surface of the semiconductor structure, the top contact being electrically connected to the upper region;
a mount:
a trench formed in a bottom surface of the semiconductor structure beneath the top contact, the trench extending from the bottom surface without penetrating the light emitting layer, the trench creating a thermal conduction path from an n-contact arm to the mount, and comprising a first sidewall extending from a top of the trench to a bottom of the trench such that the entire first sidewall is angled less than 90° relative to a normal to the top surface of the semiconductor structure;
a reflective layer disposed over the bottom surface and in the trench, the reflective layer in the trench forming at least part of a mirror that reflects light away from the top contact; and
a filler material disposed in a void where the reflective layer does not completely fill the trench.

1. A light emitting device comprising:a light emitting element; and
an elongated lens having a short axis, a long axis, and an upper surface through which a substantial majority of the light from the light emitting device is emitted;
the upper surface of the lens being smooth and continuous and including a trough that extends along the long axis, and
the perimeter of the lens being one of substantially oval or substantially elliptical.

1. A lighting fixture, comprising:a chip-on-board (CoB) light emitting diode (LED) array having an LED configuration selected from a plurality of LED configurations; and
an optic comprising a plurality of surface shapes, the optic providing different beam profiles and radiation patterns based on the plurality of surface shapes and the LED configuration selected from the plurality of LED configurations.

1. A light emitting device comprising:a light emitting element; and
an elongated lens having a short axis, a long axis, and an upper surface through which a substantial majority of the light from the light emitting device is emitted;
the upper surface of the lens being smooth and continuous and including a trough that extends along the long axis, and
the perimeter of the lens being one of substantially oval or substantially elliptical.

1. A solid state light-emitting device (LED) lighting apparatus, comprising:a stretched leadframe assembly, comprising:
leadframes spaced apart at a pitch, each leadframe comprising at least one pad;
interconnects each linking two adjacent leadframes;
LEDs mounted on the leadframes; and
bidirectional spreading lenses disposed about the LEDs, each bidirectional spreading lens having a spreading axis and a null axis perpendicular to the spreading axis, each bidirectional spreading lens directing more light in opposite directions along the spreading axis than the null axis,
the spreading axis being aligned along the length of the stretched leadframe assembly.

1. A circuit comprising:a diode bridge configured to provide a rectified alternating current (AC) signal;
a driver configured to:
receive the rectified AC signal, and
apply, a first current signal to a first dim-to-warm circuit and a second current signal to a second dim-to-warm circuit, the first dim-to-warm circuit and the second dim-to-warm circuit configured to provide outputs resulting in the same correlated-color-temperature (CCT) for light emitting diodes (LEDs) driven by the first dim-to-warm circuit and the second dim-to-warm circuit, the first current signal and the second current signals being applied non-simultaneously.

1. A system comprising:a control signal interface configured to provide a voltage control signal via a control channel; and
a light engine comprising:
a first signal generator configured to provide a first pulse-width modulated (PWM) signal based on the control signal, via a first channel;
a second signal generator configured to provide a second PWM signal based on the control signal, via a second channel; and
a third signal generator configured to provide a third PWM signal based on the first PWM signal and the second PWM signal, via a third channel;
the light engine being configured such that the three channels sum to their respective duty cycles being unity such that only one of the first PWM signal and the second PWM signal is at a logic high value concurrently and that the third PWM signal is an inverse of one of the first PWM signal and the second PWM signal having a greater duty cycle.

1. A semiconductor laser module comprising:a semiconductor laser; and
an optical element operatively coupled with the semiconductor laser to disperse laser light emitted from the semiconductor laser,
wherein the optical element is coated with a transparent conductive material that serves as an interlock on the semiconductor laser in the form of a trace that covers a substantial portion of a surface of the optical element opposite the semiconductor laser.

1. A lighting device comprising a lighting unit, wherein the lighting unit comprises a light source configured to generate light source light and a luminescent material configured to convert at least part of the light source light into luminescent material light, wherein the lighting device is configured to generate lighting device light comprising at least part of said luminescent material light, wherein the luminescent material is configured to provide said luminescent material light upon excitation by said light source light in an excitation band (EX) of said luminescent material, wherein the light source is configured to provide said light source light with a full width half maximum (FWHM) of equal to or less than 30 nm, and wherein said light source is configured to excite the luminescent material in an isosbestic point (IP) of said excitation band (EX).

1. A packaged light emitting device comprising:a package comprising a body having a reflective surface and reflective sidewalls around the reflective surface, the package further comprising a leadframe;
the leadframe having a raised portion and a lower portion, the lower portion having a top surface in a first plane and the raised portion having a top surface on a second plane different from the first plane, the raised portion being exposed through the reflective surface of the body to define at least two bonding areas, comprising a first bonding area and a second bonding area, surrounded by the reflective surface and the reflective sidewalls, the at least two bonding areas of the raised portion being electrically connected to the lower portion by the leadframe;
a mounting surface for a flip-chip light emitting device die, the flip-chip light emitting die having a first bottom bonding pad and a second bottom bonding pad, the mounting surface comprising a continuous surface formed of the at least two bonding areas and the reflective surface, the lower portion of the leadframe being at least partially encased in the body, such that at least a portion of the lower portion is between the reflective sidewalls and the at least two bonding areas;
a conductive bond material covering the at least two bonding areas; and
the flip-chip light emitting device die having its first bottom bonding pad mounted to the first bonding area by the conductive bond material and its second bottom bonding pad mounted to the second bonding area by the conductive bond material, such that the reflective surface is exposed and surrounds the flip-chip light emitting device die with no other material being exposed between edges of the flip-chip light emitting die and the reflective sidewalls.

1. A laser-based light source comprising:a laser being arranged to emit laser light with a laser peak emission wavelength,
a ceramic light converter being adapted to convert a part of the laser light to converted light, wherein a peak emission wavelength of the converted light is in a longer wavelength range than the laser peak emission wavelength,
a light outcoupling dome with a base area of at least 2.5*105 ?m2 comprising a material with a thermal conductivity of more than 25 W/(m*K), wherein a bonding area of the base area of the light outcoupling dome of at least 8*103 ?m2 is adhesive-free bonded to the ceramic light converter, wherein the base area is at least 25 times larger than an area of the ceramic light converter being arranged to be illuminated by the laser,
a substrate thermally coupled to the light outcoupling dome,whereinthe light outcoupling dome comprises an optical axis extending through a center point of the base area and through a top of the light outcoupling dome,
a center of the ceramic light converter is arranged near to or on the optical axis of the light outcoupling dome,
the light outcoupling dome comprises a reflective structure covering a rim of the light outcoupling dome around the base area, and
the reflective structure is arranged such that converted light emitted into the light outcoupling dome with an angle larger than ?=65° with respect to the optical axis of the light outcoupling dome is reflected back in the direction of the ceramic light converter.

1. An illumination system, comprising:a light guide having a light emitting surface, the light emitting surface having a plurality of portions, each portion having a different light extraction pattern formed thereon, each light extraction pattern including a different plurality of light extraction features, and each light extraction pattern having a different light extraction feature density; and
a plurality of light emitting diodes (LEDs), each LED being electrically coupled to a different respective one of the plurality of portions of the light guide, such that a length of a period for which the LED is powered on during a cycle of a waveform is inversely proportional to the light extraction feature density of the respective portion's light extraction pattern.

1. A light-emitting device package, comprising:a metalized substrate, comprising:
a top surface;
pads on the top surface; and
traces extending from the pads to a perimeter of the top surface;
a light-emitting diode (LED) die comprising junctions mounted on the pads, the junctions being individually addressable through the traces; and
a single primary optic over the LED die.

1. A light emitting device comprising:a support structure;
a light emitting diode (LED) die mounted on the support structure,
the LED die having a top surface and at least one side surface and comprising LED semiconductor layers and a transparent substrate, the LED semiconductor layers having a thickness and the transparent substrate having a thickness, the substrate comprising the top surface of the LED die, a ratio of substrate thickness to the LED semiconductor layers thickness being 2 or greater and the ratio of the area of the side surface to the area of the top surface being 1 or greater;
a phosphor layer covering the top surface and side surfaces;
a reflector surrounding the LED die, the reflector having curved surfaces surrounding the LED, wherein the curved surfaces extend from a generally rectangular opening for the LED die and reflect the light from the side surfaces of the LED die to form a generally rectangular beam;
a generally rectangular lens affixed to walls of the reflector, the lens having a generally rectangular convex surface extending toward the LED die and a flat top surface facing away from the LED die; and
a thickness from a bottom surface of the support structure to the flat top surface of the lens being 2 mm or less.

1. A structure comprising:a stretchable film;
a plurality of light emitting elements situated on un-stretched segments of the stretchable film, each light emitting element comprising:
a top surface and a bottom surface opposite the top surface, the bottom surface being situated on an un-stretched segment of the stretchable film; and
one or more side surfaces connecting the top surface to the bottom surface;
a plurality of streets between the light emitting elements, the streets being situated on stretched segments of the stretchable film, the stretched segments being in a state of greater strain than the un-stretched segments, the stretched segments having a strain greater than 5;
a filler material that fills the plurality of streets from the bottom surface and extends only partly up along the one or more coating side surfaces but not completely along the one or more side surfaces: and
a continuous wavelength conversion coating that extends over the light emitting elements and in the streets between the light emitting elements, such that; the wavelength conversion coating is in contact with the filler material at the base of the wavelength conversion coating, has a substantially flat top surface, and comprises side surfaces shaped by at least two side surfaces of two different light emitting elements.

1. A control apparatus to color tune a light-emitting diode (LED) array, the apparatus comprising:a wireless module to receive a wireless signal from a wireless control-device, the received wireless signal comprising at least one signal of signals including a correlated color temperature (CCT) value and a distance value (Duv) of a temperature of the LED array from a black-body line (BBL), the Duv value being one of a positive metric or a negative metric of a color point from the BBL, the Duv indicating a greenish color, if above the BBL, or a pinkish color, if below the BBL, respectively;
a control unit coupled to the wireless module to translate one or more signals received therefrom, the control unit further coupled to the LED array and to an LED driver, the control unit to receive power for the LED array from the LED driver, the control unit further configured to provide the power to the LED array in a manner based on the translated signals; and
a dimmer emulator coupled to the control unit to provide one or more control signals to the LED driver.

1. An illumination device, comprising:a photon emitter configured to emit photons of a wavelength; and
a periodic plasmonic antenna array comprising a plurality of individual antenna elements arranged in an antenna array plane, wherein:
said plasmonic antenna array is arranged in close proximity of said photon emitter such that at least a portion of said photons are emitted by a coupled system comprising said photon emitter and said plasmonic antenna array;
said individual antenna elements are out-of-plane asymmetric and have a height such that a ratio between the height of the antenna elements and the wavelength is in the range of 0.143 to 0.385; and
said plasmonic antenna array is configured to:
support surface lattice resonances at the wavelength, arising from diffractive coupling of localized surface plasmon resonances in said individual antenna elements; and
comprise plasmon resonance modes being out-of-plane asymmetric, such that light emitted from said plasmonic antenna array has an anisotropic angle distribution in relation to said antenna array plane.

1. An illuminating device producing an asymmetrical light intensity distribution comprising:a circular light guide having a perimeter;
a plurality of light emitting diodes (LEDs) mounted proximate to at least a portion of the perimeter of the light guide so as to inject light into the circular light guide, the plurality of LEDs being grouped into at least two groups of LEDs, a first group of the at least two groups of LEDs being located on one side of a diameter of the circular light guide, a second group of the at least two groups of LEDs being located on an opposite side of the diameter of the circular light guide, the first and second groups of LEDs being configured such that the first group of LEDs emits brighter light than the second group of LEDs;
a diffuser on a light exit surface of the light guide, the diffuser producing a Gaussian emission which maintains a directionality of an impinging light ray while diffusing the light ray; and
a plurality of linear grooves that form a second surface of the circular light guide opposite the light emitting surface, the plurality of linear grooves being parallel one another and spaced apart from one another along the diameter of the circular light guide, each of the plurality of linear grooves having an angled surface, for directing light toward the light exit surface of the light guide, and each of the plurality of linear grooves having a surface substantially perpendicular to the light exit surface of the light guide,
wherein the first group of LEDs generate first incident light rays that are directed by the angled surfaces of the grooves toward the light exit surface to primarily contribute to the front emission and side emissions of the light guide,
wherein the second group of LEDs generate second incident light that is reflected back towards the second LEDs by the surfaces of the grooves that are substantially perpendicular to the light exit surface to also primarily contribute to the front emission and side emissions of the light guide, and
wherein the plurality of LEDs, the diffuser, and the linear grooves are configured to produce an asymmetrical light intensity distribution comprising the front emission, the back emission, and the side emissions, wherein the side emissions have a peak intensity that is at least twice that of the front emission, and the peak intensity of the back emission is less than that of the front emission.

1. An automotive LED lamp unit, comprising:a plate-like mounting member comprising two opposing sides and side edges between the two opposing sides;
LED light sources arranged on the two opposing sides of the plate-like mounting member;
a heat sink, comprising:
a tapered end facing the LED light sources and being connected to one of the side edges at one end of the plate-like mounting member to achieve the emission of the LED light in a large solid angle;
a non-tapered end, wherein a thickness of the non-tapered end is more than twice the thickness of the plate-like mounting member; and
cooling fins;
an electrical connector base, wherein the heat sink is arranged between the electrical connector base and the plate-like mounting member.

1. A method comprising:activating a first light source that emits light having a first spectrum toward a bed of a plurality of plants;
capturing a first image of the bed of the plurality of plants with a broad spectrum camera on a condition that the first light source is activated and a second light source that emits light having a second spectrum different than the first spectrum, towards the bed of a plurality of plants, is deactivated;
activating the second light source; and
on a condition that the second light source is activated, capturing a second image of the bed of the plurality of plants with the broad spectrum camera if the second light source is activated and if the first light source is deactivated.

2. A light-emitting diode (LED) lighting system comprising:an LED array configured to emit light having a first correlated color temperature (CCT) at a first end of a first range;
a second LED array configured to emit light having a second CCT at a second end of the first range;
a third LED array configured to emit light having a third CCT in a range between the first CCT and the second CCT;
a two-channel LED driver having two output terminals configured to provide a separate driving current at each of the two output terminals; and
a converter circuit having two input terminals, each of the two input terminals electrically coupled to a respective one of the two output terminals of the two-channel LED driver, and three output terminals, each of the three output terminals electrically coupled to a respective one of the first, second, and third LED arrays to provide a separate drive current to each of the first, second, and third LED arrays via respective first, second, and third drive channels, the converter circuit including:
a first computational circuit electrically coupled to receive a first voltage based on a first driving current of the two channel LED driver and configured to provide a first output voltage having a level equal to a level of the second input voltage minus a level of the first input voltage;
a second computational circuit electrically coupled to receive a second input voltage based on a second driving current of the two channel LED driver and configured to provide a second output voltage having a level equal to the level of the first input voltage minus the level of the second input voltage;
a first current generator configured to generate a first drive current having a level based on the level of the first output voltage;
a second current generator configured to generate a second drive current having a level based on the level of the second output voltage; and
a control circuit configured to provide a third drive current having a level based on the levels of the first and second input voltages on a condition that both the levels of the first and second input currents are greater than zero.

1. A headlight for a vehicle, comprising:a concave reflector and a lamp arranged within the aid reflector to reflect light from the lamp to create an illumination beam with a bright/dark boundary,
the lamp comprising
a transparent vessel including a longitudinal axis,
at least a first and a second filament arranged within the vessel,
a baffle arranged proximate to the first filament, characterized by
the baffle comprising first and second upper side edges, the first filament being arranged above a first plane including the upper side edges,
wherein in a second plane through a center of the first filament, the second plane being arranged perpendicular to the longitudinal axis, the upper side edges are arranged symmetrically to a baffle symmetry axis extending from the center of the first filament centrally between the upper side edges,
the lamp being arranged within the reflector rotated around the longitudinal axis by a rotation angle of 2°-20°.

1. A light-emitting device comprising:a light source; and
a light guide that is optically coupled to the light source, the light guide comprising:
a plurality of first light extraction elements that are non-fluorescent and a plurality of second light extraction elements that are non-fluorescent and that are printed on the same surface of the light guide as the first light extraction elements,
each of the first light extraction elements having a reflectance that is higher than a reflectance of any of the second light extraction elements, each of the first light extraction elements having a light transmittance that is lower than a light transmittance of any the second light extraction elements.

1. A light emitting diode (“LED”) package, comprising:a first portion of a lead frame, the first portion comprising a single first pillar having a first surface and sidewalls;
a second portion of the lead frame electrically isolated from the first portion, the second portion comprising a second pillar having a second surface and sidewalls;
a molding comprising an optically reflective and electrically insulating material on the first portion and the second portion, the molding adjacent to the sidewalls of the first pillar and the sidewalls of the second pillar;
an LED on the first surface;
a first wire bond electrically coupling the LED to the first surface; and
a second wire bond electrically coupling the LED to the second surface.

1. A light-emitting device comprising:a light-emitting semiconductor structure having a first surface, a second surface opposite the first surface, and a plurality of sides surfaces;
a plurality of contacts disposed in contact with the first surface of the light-emitting semiconductor structure;
a wavelength converting tile having a first surface, a second surface opposite the first surface, and a plurality of side surfaces, the wavelength converting tile being disposed on the light-emitting semiconductor structure such that the second surface of the wavelength converting tile is adjacent the second surface of the light-emitting semiconductor structure, the wavelength converting tile comprising a first wavelength converting material; and
a sheet of a second wavelength converting material that is laminated on one or more of the plurality of side surfaces of the light-emitting semiconductor structure and one or more of the plurality of side surfaces of the wavelength converting tile, the sheet of the second wavelength converting material being arranged to cover at least a portion of the one or more of the plurality of side surfaces of the wavelength converting tile, while leaving the first surface of the wavelength converting tile uncovered.

1. A light emitting diode (LED) device, comprising:a light emitting element comprising:
a semiconductor stack comprising an n-type layer, an active layer and a p-type layer, a surface of one of the p-type layer and the n-type layer forming a first surface of the light emitting element,
an electrical isolation region electrically isolating the semiconductor stack into an emitter segment and a photosensor segment, and
a transparent substrate disposed over both the emitter segment and the photosensor segment to form a second surface of the light emitting element;
at least one anode electrode disposed on the first surface of the light emitting element; and
at least one cathode electrode disposed on the first surface of the light emitting element,
each of the emitter segment and the photosensor segment being electrically coupled to one of the at least one cathode electrode and one of the at least one anode electrode.

1. A device comprising:a voltage controlled current source;
a first sense resistor to sense a first sensed voltage of a first current channel;
a second sense resistor to sense a second sensed voltage of a second current channel;
a computational circuit comprising:
an operational amplifier, and
an RC circuit disposed between an output of the operational amplifier and ground, the RC circuit comprising a capacitor and resistor in parallel with the capacitor,
the operational amplifier configured to:
provide a charging current to charge the capacitor to increase an output voltage of the computational circuit when the first sensed voltage is less than the second sensed voltage, and
allow the capacitor to discharge through the resistor to decrease the output voltage when the first sensed voltage is greater than the second sensed voltage;
a first voltage control switch to power, using the voltage controlled current source, a first LED array based on the output voltage of the computational circuit; and
a second voltage control switch to power, using the voltage controlled current source, a second LED array based on the output voltage of the computational circuit.

1. A method comprising:illuminating a scene with a first sensing spectrum emitted by a first subset of a plurality of primary light sources;
capturing a first image of the scene while the scene is illuminated with the first sensing spectrum, the first image comprising a plurality of pixels;
illuminating the scene with a second sensing spectrum emitted by a second subset of the plurality of primary light sources;
capturing a second image of the scene while the scene is illuminated with the second sensing spectrum, the second image comprising the plurality of pixels;
generating a color map of the scene assigning a color point in a color space to each of the plurality of pixels based on the first sensing spectrum, the first image, the second sensing spectrum, and the second image;
determining a lighting spectrum based on the color map; and
illuminating the scene with the lighting spectrum emitted by the plurality of primary light sources.

1. An imaging device comprising an image sensor to record image data from a scene, an imaging lens arranged in a light path between an aperture of the imaging device and the image sensor, an infrared light source to illuminate the scene, and an infrared autofocus system for automatically moving the imaging lens in order to set the image sensor in a focus, wherein the image sensor comprises an array of sensor pixels each arranged as dual pixel comprising two separate pixel sensors per dual pixel to record the image data as a sum signal from both pixel sensors by the image sensor and providing infrared data as individual signals from each of the two pixel sensors to the autofocus system for phase contrast autofocusing, wherein an infrared filter is arranged in the light path between the aperture and the imaging sensor, wherein the filter is adapted to filter all light directed towards the imaging sensor, wherein the infrared filter comprises at least one first area arranged as infrared blocking area and at least one second area arranged as infrared bandpass area, and wherein only a portion of the infrared light passing through said at least second area is transmitted along the light path to the imaging sensor.

1. A structure comprising:a semiconductor light emitting device capable of emitting first light having a first peak wavelength;
a semiconductor wavelength converting element disposed in a path of the first light emitted by the semiconductor light emitting device and comprising a light emitting layer of a semiconductor wavelength material capable of absorbing the first light and in response emitting second light having a second peak wavelength;
a passivated surface of the semiconductor wavelength converting element; and
a ceramic phosphor attached to and supporting the semiconductor wavelength converting element and capable of emitting third light having a third peak wavelength and a spectral width greater than a spectral width of the second light.

1. An optic, comprising:an input face;
a lower exterior surface defined by a parabolic segment rotated about an axis of symmetry, the parabolic segment comprising a part of a parabola with an optical axis tilted away from the axis of symmetry when travelling upward along the optical axis, wherein a bottom end of the lower exterior surface joins a perimeter of the input face;
an upper exterior surface above the lower exterior surface, the upper exterior surface being defined by a line rotated about the axis of symmetry, the line being tilted away from the axis of symmetry when travelling upward along the line; an intermediate surface comprising an annulus, the annulus having an outer circumference that joins an upper end of the lower exterior surface and an inner circumference that joins a lower end of the upper exterior surface; and
an interior conical surface surrounded by the lower and the upper exterior surfaces, the interior conical surface being defined by a smooth curve rotated about the axis of symmetry, at least a majority of the smooth curve turning away from the axis of symmetry when travelling upward along the smooth curve, wherein:
the interior conical surface has a vertex located at the axis of symmetry and within the lower exterior surface; and
top ends of the interior conical surface and the upper exterior surface join to define an output aperture.

1. A light emitting device comprising:an adhesive applied to a portion of a ceramic phosphor plate, wherein the portion of the ceramic phosphor plate has a smaller surface area than a surface area of the ceramic phosphor plate;
a light emitting diode directly affixed to the ceramic phosphor plate by the adhesive, wherein the light emitting diode and the ceramic phosphor plate are separated by a gap; and
a transparent material formed in the gap.

1. A lighting device comprising:a substrate comprising a plurality of holes, wherein the holes extend from a top surface of the substrate;
a semiconductor structure grown on the top surface of the substrate, the semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, a portion of the semiconductor structure being disposed in the holes; and
a non-III-nitride material disposed within the plurality of holes and forming a gradient index optical interface between the semiconductor structure and the substrate, the top surface of the substrate being free of the non-III-nitride material, wherein the gradient index optical interface smoothly transitions from a first refractive index to a second refractive index between the semiconductor structure and the substrate, the second refractive index being closer to a refractive index of the substrate than is the first refractive index.

1. A device for providing an amount of power to a gas discharge lamp, the device comprising:a control circuit for controlling a supply circuit for supplying the power to the gas discharge lamp, the control circuit configured to:
from a cold start of the gas discharge lamp, supply a maximum current to the gas discharge lamp;
when the power to the gas discharge lamp reaches a maximum amount of power, supply a decreasing current to maintain the power to the gas discharge lamp at the maximum amount of power;
at a predefined time interval after the cold start of the gas discharge lamp, measure a non-steady state voltage value of a voltage signal across the gas discharge lamp;
calculate a boundary voltage value as a function of the measured, non-steady-state voltage value of the voltage signal; and
when the voltage signal reaches the boundary voltage value, supply an even more decreasing current to decrease the power to the gas discharge lamp.

1. A luminescent structure comprising:an InxZnyP core, wherein 0?y/x<100, and wherein the InxZnyP core comprises an alloy including both In and Zn; and
a shell disposed on a surface of the core, wherein a difference between a lattice constant of the shell and a lattice constant of the InxZnyP core is less than 1.7% relative to the lattice constant of the shell.

1. A light-emitting diode (LED) strip, comprising:a power bus;
a switching circuit; and
an LED coupled to the power bus via the switching circuit, the switching circuit arranged, when the LED strip is turned on, to electrically couple the LED to the power bus on a condition that the LED is otherwise disconnected from the power bus.

1. An apparatus of a light engine comprising:a core comprising an opening extending completely through the core, the opening defining an inner surface of the core;
a plurality of independently addressable light emitting diode (LED) segments, each LED segment comprising a plurality of LEDs;
a flexible printed circuit board (PCB) comprising a body adjacent to one of an inner or outer surface of the core and to which the LED segments are attached and a plurality of legs extending from the body and bent to be adjacent and traverse to the other of the inner or outer surface, each leg associated with a different LED segment; and
control circuitry connected with the legs of the flexible PCB, the control circuitry configured to independently control parameters of the LED segments to provide a preset illumination distribution and intensity based on user input.

1. A method for observing plant health comprising:capturing a first image of a plant with a broad spectrum camera while the plant is being illuminated by a first narrow-band light from a first LED; and
capturing a second image of the plant with the broad spectrum camera while the plant is being illuminated by a second narrow-band light from a second LED and not illuminated by the first narrow-band light;
determining a relative absorption by the plant of the first narrow-band light and the second narrow-band light using the first and second images, where the relative absorption is an indication of health of the plant.

1. A method of manufacturing a light-emitting device (LED) comprising:providing a wafer comprising a plurality of III-nitride semiconductor layers on a non-III-nitride substrate that has an in-plane lattice constant not more than 1% different than a bulk lattice constant of at least one of the plurality III-nitride semiconductor layers;
attaching a first adhesive-coated film to a surface of one of the plurality of III-nitride semiconductor layers;
attaching a second adhesive-coated film to a surface of the non-III-nitride substrate; and
pulling the non-III-nitride substrate and the III-nitride semiconductor layers apart to remove the non-III-nitride substrate from the III-nitride semiconductor layers.

1. An apparatus of a light engine, the apparatus comprising:a core comprising, an outer surface, an opening extending completely through the core, the opening defining an inner surface of the core;
a plurality of independently addressable light emitting diode (LED) segments, each LED segment comprising a plurality of LEDs;
a flexible printed circuit board (PCB) to which the LED segments are attached, the flexible PCB comprising: a flexible body attached to one of the inner or outer surface of the core and to which the LED segments are mounted, and a plurality of flexible legs extending from the body, along the core, and traverse and adjacent to the other of the inner or outer surface;
a light guide plate (LGP) into which light from the LED segments is introduced, in which the light from the LED segments is guided, and from which the light from the LED segments exits to provide illumination, the LED segments configured to emit light in all directions of a plane created by the LGP; and
a reflector opposing a first surface of the LGP over substantially the entirety of the LGP and the LED segments and configured to reflect light from the LGP back into the LGP.

1. A light-emitting device, comprising:an electron blocking layer;
a hole blocking layer, at least a portion of the hole blocking layer having a compressive strain; and
an active layer disposed between the hole blocking layer and the electron blocking layer, the active layer including:
a first barrier layer having a first tensile strain,
a second barrier layer having a second tensile strain,
a first well layer disposed between the first barrier layer and the second barrier layer,
a first unstrained barrier layer,
a second unstrained barrier layer, and
a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

1. A laser-based light source for a vehicle headlight comprising:at least one laser, wherein the at least one laser is adapted to emit laser light,
a light converting device comprising a light converter, wherein the light converter is adapted to convert the laser light to converted light, wherein a peak emission wavelength of the converted light is in a longer wavelength range than a laser peak emission wavelength of the laser light, and
an optical arrangement, wherein the optical arrangement is adapted to provide a transformed focused image of the laser on the light converter of the light converting device, wherein the optical arrangement is further adapted to broaden the image of the laser on the light converter of the light converting device in at least a first direction perpendicular to an optical axis of the laser-based light source, and wherein the optical arrangement is further adapted to broaden the image of the laser in the first direction independent from a second direction, wherein the second direction is perpendicular to the optical axis and to the first direction, wherein the optical arrangement is adapted to broaden the image of the laser by providing at least two overlapping images of the laser on the light converter broadened in at least the first direction.

1. A method for manufacturing a lighting assembly, comprising:soldering a light emitting diode element to top surfaces of a first portion and a second portion of a leadframe, forming solder joints therebetween; and
embedding at least a portion of the leadframe in an optically reflective and electrically insulating material such that the optically reflective and electrically insulating material covers all exposed portions of at least the top surfaces of both the first portion and the second portion of the lead frame, contacts the bottom surface of the first portion and the second portion of the leadframe, and fills a space between the first portion and the second portion of the leadframe.

1. A method comprising:(a) providing a wafer comprising an epitaxy layer and a dielectric layer with openings having metal contacts;
(b) depositing a barrier layer on the metal contacts and the dielectric layer;
(c) depositing a patterned photoresistive layer on the barrier layer in regions of the wafer overlaying the metal contact;
(d) depositing a reflective layer on the patterned photoresistive layer and the barrier layer; and
(e) removing the patterned photoresistive layer including portions of the reflective layer overlaying the patterned photoresistive layer.

1. A method, comprising:capturing a first image of a scene;
detecting a face in a section of the scene from the first image;
creating a three dimensional profile of the face;
calculating an amount of infrared (IR) light to illuminate the section of the scene based on the first image and the three dimensional profile of the face;
activating an infrared (IR) light source to selectively illuminate the section of the scene with the amount of IR light, the IR light source comprising an array of IR light emitting diodes (LEDs);
capturing a second image of the scene under selective IR lighting from the IR light source;
detecting the face in the second image; and
identifying a person based on the face in the second image.

1. A light-emitting system, comprising:a light guide configured to guide light received from a light source;
a first light extraction element positioned on a first surface of the light guide and configured to extract a portion of the guided light from the light guide, the first light extraction element being non-fluorescent, the first light extraction element having a first reflectance and a first transmittance; and
a second light extraction element positioned on the first surface of the light guide and configured to extract a portion of the guided light from the light guide, the second light extraction element being non-fluorescent, the second light extraction element having a second reflectance different from the first reflectance, the second light extraction element having a second transmittance different from the first transmittance.

1. A device comprising:a light emitting semiconductor structure;
a wavelength converting structure disposed on a top surface of the light emitting semiconductor structure;
a light blocking structure disposed along a sidewall of the light emitting semiconductor structure and the wavelength converting structure, the light blocking structure being a same color as an off-state color of the wavelength converting structure; and
a reflective layer disposed between the light blocking structure and the semiconductor structure, the reflective layer including alternating first and second insulating layers, the first insulating layers having a different index of refraction from the second insulating layers.

1. A light-emitting diode (LED) lighting system comprising:a holder comprising:
an aperture having a perimeter, and
a fillet adjacent the perimeter of the aperture, the fillet having a radius greater than or equal to 2.0 mm and less than or equal to 4.6 mm; and
an LED array mechanically coupled to the holder, the LED array having a light emitting area exposed through the aperture.

1. A system, comprising:a camera having a sensing efficiency that varies over a field of view of the camera;
a lighting system configured to illuminate the field of view of the camera, the lighting system configured to generate illumination having a distribution shaped to have higher intensity where the sensing efficiency is lower, the illumination having an intensity at a center of the field of view that is lower than an intensity of the illumination at an edge of the field of view; and
a processor configured to manipulate a first image data corresponding to a scene illuminated by the lighting system using a second image data corresponding to the scene with ambient lighting.

1. A light-emitting device, comprising:a light-emitting diode (LED) on a first surface of a crystalline growth substrate;
a fence structure having a bottom mounted to a limited portion of a second surface of the crystalline growth substrate that is opposite the first surface of the crystalline growth substrate, the fence structure including a plurality of walls, between which a hole passes from a top of the fence structure to the bottom of the fence structure to define a cell;
a light-converting structure on the second surface of the crystalline growth substrate in the cell; and
a reflective layer directly contacting an outer surface of the plurality of walls of the fence structure; and
a reflective pattern formed on the second surface of the crystalline growth substrate, the reflective pattern including a plurality of lines, each line being at least partially coincident with a different wall of the fence structure and formed between the wall of the fence structure and the substrate, the each line comprising a distributed Bragg reflector (DBR) comprising an alternating stack of materials having differing refractive indices.