US Pat. No. 9,257,273

CHARGED PARTICLE BEAM APPARATUS, THIN FILM FORMING METHOD, DEFECT CORRECTION METHOD AND DEVICE FORMING METHOD

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a charged particle source;
a condenser lens electrode configured to condense a charged particle beam extracted from the charged particle source;
a blanking electrode configured to switch irradiation and non-irradiation of the charged particle beam;
a scanning electrode configured to scan and irradiate the charged particle beam;
a sample stage on which a sample is to be mounted;
a secondary charged particle detector configured to detect a secondary charged particle generated from the sample in response
to irradiation of the sample with the charged particle beam;

a reservoir in which a silicon compound represented by a general formula (I) below is accommodated as a source gas; and
a gas gun configured to supply the source gas to a position of the sample that is irradiated with the charged particle beam,
SinXm  (I)
(where n is an integer of 3 or larger, m is an integer of n, 2n?2, 2n, or 2n+2, and X represents a hydrogen atom and/or a
halogen atom).

US Pat. No. 9,315,898

TEM SAMPLE PREPARATION METHOD

HITACHI HIGH-TECH SCIENCE...

1. A TEM sample preparation method comprising:
placing a sample on a sample holder so that a first side surface of the sample, which is closer to a desired observation target
inside the sample than a second side surface of the sample is to the observation target, is opposed to a focused ion beam
column;

setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a film portion
including the observation target and having a thickness direction substantially parallel to a thickness direction of the sample,
to a region of the first side surface that is adjacent to the film portion; and

performing etching processing to a portion of the sample extending from the first side surface thereof to a front surface
thereof by irradiating the processing region with the focused ion beam from the focused ion beam column,

wherein the processing region includes a first irradiation region at the front surface side thereof and a second irradiation
region at the film portion side thereof, and

wherein an irradiation amount of the focused ion beam is set to be larger in the second irradiation region than in the first
irradiation region.

US Pat. No. 9,214,316

COMPOSITE CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A composite charged particle beam apparatus, comprising:
an FIB column having an ion beam irradiation axis;
an SEM column having an electron beam irradiation axis, the SEM column being arranged relative to the FIB column so that the
beam irradiation axes thereof intersect with each other substantially at a right angle;

a sample stage for mounting a sample;
a detector for detecting secondary particles generated from the sample;
an observation image formation portion for forming an FIB image and an SEM image based on a detection signal of the detector;
and

a display portion for displaying the FIB image and the SEM image such that the horizontal display direction of the sample
is the same in both the FIB image and the SEM image.

US Pat. No. 9,218,937

CHARGED PARTICLE BEAM APPARATUS HAVING IMPROVED NEEDLE MOVEMENT CONTROL

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a charged particle beam column configured to irradiate an irradiation target with a charged particle beam;
a detector configured to detect secondary charged particles emitted from the irradiation target by the irradiation of the
charged particle beam;

a needle arranged in an irradiation area of the charged particle beam;
a needle actuator configured to actuate the needle; and
a controller configured to control the needle actuator to actuate the needle along a movement route that is configured by
a preset target position and preset way points,

wherein the controller controls the needle actuator to set an actuating direction of the needle for each of the way points.

US Pat. No. 9,218,939

FOCUSED ION BEAM SYSTEM, SAMPLE PROCESSING METHOD USING THE SAME, AND SAMPLE PROCESSING PROGRAM USING FOCUSED ION BEAM

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam system comprising:
a focused ion beam irradiation mechanism configured to irradiate a sample, on which a protective film is formed, with a focused
ion beam from above the sample;

a processing control unit configured to perform a removal process on both sides of a region to be a thin piece portion of
the sample by the focused ion beam and sequentially form observation surfaces parallel to an irradiation direction of the
focused ion beam so as to process the thin piece portion to a target thickness; and

an observation surface image generation unit configured to generate an observation surface image of at least one of the observation
surfaces,

wherein the processing control unit is configured to terminate the removal process when a height of the protective film becomes
a predetermined threshold value in the observation surface image.

US Pat. No. 9,129,771

EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM

HITACHI HIGH-TECH SCIENCE...

1. An emitter structure comprising:
a pair of conductive pins which are fixed to a base member;
a filament which is connected between the pair of conductive pins; and
an emitter which is connected to the filament and has a sharp tip;
wherein a supporting member is fixed to and extends through the base member, and the emitter is connected to the supporting
member.

US Pat. No. 9,418,817

FOCUSED ION BEAM APPARATUS AND CONTROL METHOD THEREOF

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising:
an emitter configured to emit an ion beam;
an ion source chamber that accommodates the emitter and is supplied with a source gas;
a cooling unit, which is connected to the ion source chamber by a connecting section, and which is configured to cool the
emitter by cooling the connecting section and a wall portion of the ion source chamber;

an ion source gas supply section configured to supply an ion source gas to the ion source chamber, the ion source gas that
is supplied to the ion source chamber being exchangeable with another ion source gas that is supplied by the ion source gas
supply section; and

a control section configured to control operation of the focused ion beam apparatus;
wherein the control section comprises a temperature control section configured to control an operation of the cooling unit
such that a temperature of a wall surface contacting the ion source gas in the ion source chamber is maintained at a temperature
higher than a temperature at which each of the ion source gases before and after the exchange freezes.

US Pat. No. 9,336,979

FOCUSED ION BEAM APPARATUS WITH PRECIOUS METAL EMITTER SURFACE

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising a gas field ion source, the gas field ion source comprising:
an emitter for emitting an ion beam, the surface of the emitter being formed of a precious metal;
an ion source chamber containing the emitter;
a gas supply unit for supplying nitrogen to the ion source chamber so that the pressure in the ion source chamber is 1.0×10?6 Pa to 1.0×10?2 Pa;

an extracting electrode to which a voltage for ionizing the nitrogen and for extracting nitrogen ions is applied; and
a temperature control unit for cooling the emitter.

US Pat. No. 9,269,539

FOCUSED ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising:
a focused ion beam tube configured to irradiate a focused ion beam onto a sample;
a detector configured to detect secondary particles generated from the sample due to the irradiation with the focused ion
beam and to output detection information regarding detected secondary particles;

an image forming unit configured to form an observation image of the sample based on the detection information;
a storage unit configured to store positional relation between a first processing area set on an observation image of a first
sample and a cross-section surface of the first sample; and

a processing area setting unit configured to automatically set a second processing area on an observation image of a second
sample based on the positional relation stored in the storage unit and a position of a cross-section surface of the second
sample on the observation image of the second sample.

US Pat. No. 9,260,782

SAMPLE PREPARATION METHOD

HITACHI HIGH-TECH SCIENCE...

1. A sample preparation method, comprising:
processing a sample piece by an ion beam to form a thin film portion having a thickness that allows an electron beam to transmit
therethrough;

supplying deposition gas to the thin film portion; and
irradiating the thin film portion with an electron beam to simultaneously form a first deposition film on a first surface
of the thin film portion which is an incident side of the electron beam and a second deposition film on a second surface of
the thin film portion through which the electron beam has transmitted the thin film portion.

US Pat. No. 9,470,642

CRYSTAL ANALYSIS APPARATUS, COMPOSITE CHARGED PARTICLE BEAM DEVICE, AND CRYSTAL ANALYSIS METHOD

HITACHI HIGH-TECH SCIENCE...

1. A crystal analysis apparatus comprising:
a map constructing unit configured to construct a three-dimensional crystal orientation map on the basis of electron back-scattering
pattern (EBSP) data acquired by measuring a sample having crystal grains and crystal orientation data corresponding to EBSPs,
wherein in the three-dimensional crystal orientation map, crystal orientations appeared on a first face displaying the crystal
grains and crystal orientations appeared on a second face adjacent to the first face are different; and

a display unit for displaying the three-dimensional crystal orientation map.

US Pat. No. 9,202,671

CHARGED PARTICLE BEAM APPARATUS AND SAMPLE PROCESSING METHOD USING CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
an electron beam column configured to perform irradiation with electron beams;
a sample stage configured to support a sample;
a focused ion beam column configured to irradiate the sample with focused ion beams so as to form a cross-section;
a scattered electron detector configured to detect backscattered electrons which are generated from the cross-section by the
irradiation with the electron beams;

a crystal orientation information generation unit configured to generate crystal orientation information on a predetermined
region of the cross-section on the basis of the backscattered electrons;

an angle calculation unit configured to calculate attachment angles of the sample stage, corresponding to a direction of the
cross-section; and

a display unit configured to display the crystal orientation information,
wherein in response to receiving input of information indicating that the crystal orientation information on the region displayed
on the display unit is changed to aimed second crystal orientation information,

the angle calculation unit is configured to calculate the attachment angles corresponding to the direction of the cross-section
for generating the second crystal orientation information, and

the focused ion beam column is configured to irradiate the sample with focused ion beams at the calculated attachment angles
so that the cross-section is subject to etching processing.

US Pat. No. 9,190,243

COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND THIN SAMPLE PROCESSING METHOD

HITACHI HIGH-TECH SCIENCE...

1. A composite charged particle beam apparatus, comprising:
a first charged particle beam column configured to irradiate a thin sample with a first charged particle beam;
a second charged particle beam column configured to irradiate an irradiation position of the first charged particle beam of
the thin sample with a second charged particle beam;

a sample stage on which the thin sample is placed, the sample stage being rotatable about the irradiation axis of the first
charged particle beam column;

a tilt unit configured to tilt the thin sample about a tilt axis of the sample stage, the tilt axis being orthogonal to the
irradiation axis of the first charged particle beam column and being located inside a plane formed by the irradiation axis
of the first charged particle beam column and the irradiation axis of the second charged particle beam column; and

a tilt sample holder placed on the sample stage and configured to fix the thin sample such that a cross-sectional surface
of the thin sample is tilted at a constant angle with respect to the irradiation axis of the second charged particle beam
column and the azimuth angle of the second charged particle beam column can be changed by rotation of the sample stage.

US Pat. No. 9,336,987

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a stage configured to fix a sample;
a charged particle beam column configured to irradiate the sample with a charged particle beam;
a detector configured to detect a secondary particle emitted from the sample by the irradiation of the charged particle beam;
an image data generating section configured to generate image data indicating two-dimensional distribution of an amount of
the secondary particle detected by the detector, by converting the amount of the secondary particle into a luminance signal
corresponding to an irradiation position of the charged particle beam on a surface of the sample; and

a controller configured to:
set a first processing irradiation frame and a first position adjustment irradiation frame for a first beam condition and
a second processing irradiation frame and a second position adjustment irradiation frame for a second beam condition, which
is different from the first beam condition, on the surface of the sample in the image data the frames designating beam irradiation
areas on the surface of the sample,

form a first irradiation trace by irradiating the first position adjustment irradiation frame with the charged particle beam
of the first beam condition and a second irradiation trace by irradiating the second position adjustment irradiation frame
with the charged particle beam of the second beam condition by using the charged particle beam column,

detect the first irradiation trace and the second irradiation trace by the irradiation of the charged particle beam, and
correct a position of the second processing irradiation frame, based on a position displacement amount between a predetermined
position of the first irradiation trace and a predetermined position of the second irradiation trace.

US Pat. No. 9,229,114

RADIATION ANALYZER AND METHOD FOR ANALYZING RADIATION

HITACHI HIGH-TECH SCIENCE...

1. A radiation analyzer comprising:
a transition edge sensor configured to detect radiation;
a cold head configured to cool the transition edge sensor;
a current detecting mechanism configured to detect a current flowing in the transition edge sensor;
a peak analyzing unit configured to measure a peak value based on the current detected by the current detecting mechanism;
a first heater configured to heat the cold head to keep a temperature of the transition edge sensor constant; and
a sensitivity correction operating unit configured to correct a sensitivity of the transition edge sensor based on a relation
obtained in advance between an output of the first heater and the peak value measured by the peak analyzing unit.

US Pat. No. 9,213,007

FOREIGN MATTER DETECTOR

Hitachi High-Tech Science...

1. A foreign matter detector comprising:
an X-ray source which is configured to irradiate a sample moving in a constant direction with primary X-rays;
a parallel two-dimensional slit which includes a plurality of slits arranged in at least a moving direction of the sample
and is configured to emit parallel secondary X-rays by extracting a parallel component of secondary X-rays generated from
the sample irradiated with the primary X-rays;

a dispersing element which is configured to disperse the parallel secondary X-rays to obtain a specific X-ray fluorescence;
a Time Delay Integration (TDI) sensor which is configured to receive the X-ray fluorescence; and
a control unit which is configured to control the TDI sensor to detect a foreign matter corresponding to the X-ray fluorescence,
wherein the control unit is configured to integrate a luminance value of the X-ray fluorescence received by the TDI sensor
while matching a direction and a speed of charge transfer of the TDI sensor to a direction and a speed of movement of the
sample.

US Pat. No. 9,455,119

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a stage configured to hold a sample and to be movable;
a charged particle beam irradiation unit configured to irradiate the sample with a charged particle beam;
an image acquiring unit configured to detect secondary electrons generated from the sample due to the irradiation with the
charged particle beam and to acquire images of the sample; and

a controller configured to control the charged particle beam apparatus and perform operations comprising:
an irradiating operation to irradiate a first position of the sample with the charged particle beam while changing a scan
range of the charged particle beam such that the scan range of the charged particle beam moves from the first position;

a first image acquiring operation to control the image acquiring unit to acquire an image of each portion where the charged
particle beam moves;

an indicator forming operation to form an indicator at a second position by the charged particle beam when the scan range
of the charged particle beam reaches the second position;

a second image acquiring operation to control the image acquiring unit to acquire an image of the second position in a state
where the indicator is formed; and

an adjusting operation to adjust a relative position between the stage and the scan range of the charged particle beam.

US Pat. No. 9,046,472

CRYSTAL ANALYSIS APPARATUS, COMPOSITE CHARGED PARTICLE BEAM DEVICE, AND CRYSTAL ANALYSIS METHOD

HITACHI HIGH-TECH SCIENCE...

1. A crystal analysis apparatus comprising:
a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation
points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals;

a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs;
and

a map constructing unit configured to construct a three-dimensional crystal orientation map based on distribution of crystal
orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the
prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation
database on the basis of the EBSP data stored in the measurement data storage.

US Pat. No. 9,583,299

IRIDIUM TIP, GAS FIELD ION SOURCE, FOCUSED ION BEAM APPARATUS, ELECTRON SOURCE, ELECTRON MICROSCOPE, ELECTRON BEAM APPLIED ANALYSIS APPARATUS, ION-ELECTRON MULTI-BEAM APPARATUS, SCANNING PROBE MICROSCOPE, AND MASK REPAIR APPARATUS

Hitachi High-Tech Science...

1. An iridium tip comprising a pyramid structure wherein an apex portion of the pyramid structure has an apex with <210> orientation
surrounded by one {100} crystal plane and two {111} crystal planes,
wherein the pyramid structure includes a first layer composed of a single iridium atom constituting the apex of the pyramid
structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle,
and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a
triangle, and

wherein the crystal planes of the pyramid structure are defined by the iridium atoms of the first, second, and third layer.

US Pat. No. 9,318,303

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
an electron beam irradiation unit configured to irradiate a sample with electron beams along a first irradiation axis;
a rotation stage, which is configured to hold the sample, and which has a rotation axis in a direction perpendicular to the
first irradiation axis;

an ion beam irradiation unit configured to irradiate the sample with ion beams along a second irradiation axis that is substantially
parallel to the rotation axis so as to process the sample into a needle shape;

a detection unit configured to detect at least one of charged particles and X rays generated via the needle-shaped sample
by the irradiation with the ion beams or the electron beams;

a gaseous ion beam irradiation unit configured to irradiate the needle-shaped sample with gaseous ion beams; and
a control unit configured to control the charged particle beam apparatus to perform:
a rotation operation in which the rotation stage is rotated by a predetermined angle repeatedly so as to rotate the sample
stage by 360°; and

an irradiation operation in which the gaseous ion beam irradiation unit irradiates an entire surface of the needle-shaped
sample in a circumferential direction with the gaseous ion beams.

US Pat. No. 9,245,713

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus for processing a tip end portion of a sample into a needle shape, the charged particle
beam apparatus comprising:
an ion beam irradiation unit configured to irradiate the tip end portion with ion beams;
an electron beam irradiation unit configured to irradiate the tip end portion with electron beams;
a secondary electron detection unit configured to detect secondary electrons generated at the tip end portion by the irradiation
with the electron beams; and

an EBSD detection unit configured to detect backscattered diffracted electrons generated at the tip end portion by the irradiation
with the electron beams.

US Pat. No. 9,188,553

X-RAY FLUORESCENCE ANALYZER

Hitachi High-Tech Science...

1. An X-ray fluorescence analyzer comprising:
a sample stage which has an opening at an X-ray irradiation position and is configured to receive a sample placed on the opening;
an X-ray source which is configured to irradiate the sample placed on the opening with a primary X-ray from below;
a detector which is disposed below the opening and is configured to detect an X-ray fluorescence generated from the sample
irradiated with the primary X-ray;

a drop prevention plate which is transparent and supported to be advanced and retracted immediately below the opening;
a drive mechanism which is configured to advance and retract the drop prevention plate;
an observation camera which is disposed below the opening to observe the drop prevention plate when the drop prevention plate
is positioned immediately below the opening; and

an operation unit which is configured to process an image of the drop prevention plate which is captured by the observation
camera,

wherein the operation unit is configured to detect a foreign matter on the drop prevention plate based on an image difference
between images before and after the drive mechanism moves or vibrates the drop prevention plate within an observation range
of the observation camera.

US Pat. No. 9,410,906

X-RAY FLUORESCENCE SPECTROMETER COMPRISING A TEMPERATURE SENSOR, TWO EXTERNAL-AIR FANS, AND A CIRCULATION FAN

Hitachi High-Tech Science...

1. An X-ray fluorescence spectrometer comprising:
an X-ray source configured to irradiate a sample with primary X-rays;
a light condensing device configured to condense the primary X-rays emitted from the X-ray source to reduce an irradiation
area on the sample;

a detector configured to detect fluorescent X-rays produced from the sample irradiated with the primary X-rays;
a housing which accommodates at least the X-ray source and the light condensing device;
a temperature sensor which is disposed in at least one of the X-ray source and a periphery of the X-ray source;
at least one external-air fan, which is disposed on the housing, and which is configured to exchange internal air with external
air; and

a control section configured to drive the at least one external-air fan based on temperature information detected by the temperature
sensor so as to adjust an ambient temperature around the X-ray source to a constant temperature.

US Pat. No. 9,347,896

CROSS-SECTION PROCESSING-AND-OBSERVATION METHOD AND CROSS-SECTION PROCESSING-AND-OBSERVATION APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A cross-section processing-and-observation method comprising:
a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample;
a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional
image of the cross-section;

a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined
direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample; and

a specific observation target detection step of detecting a predetermined specific observation target from the cross-sectional
image acquired at the cross-sectional image acquisition step;

wherein in the specific observation target detection step, after a predetermined specific observation target is detected,
the setting interval of the cross-section exposure step is set to be shorter than that before the specific observation target
is detected.

US Pat. No. 9,310,325

FOCUSED ION BEAM APPARATUS AND METHOD OF WORKING SAMPLE USING THE SAME

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising:
a sample stage, which is configured to place a sample that is a working target thereon, and which comprises a movement mechanism
configured to move a location of the sample;

a focused ion beam emission mechanism configured to emit a focused ion beam to the sample;
a detector configured to detect secondary charged particles generated from the sample by the emission of the focused ion beam
to the sample;

an image generation unit configured to generate a sample image including location detection marks formed on the sample, based
on detection data of the detector;

a display unit configured to display the sample image; and
a control unit which, in a case of moving the sample stage and performing working by emitting the focused ion beam to a working
region of the sample that is beyond a display range of the display unit, is configured to:

form location detection marks on at least one of the sample and the sample image on the display unit;
perform working of at least part of the working region of the sample by irradiating the sample with the ion beam on a first
sample image while detecting a location of a first location detection mark formed at a processing starting point side and
controlling an emission location of the focused ion beam based on the first location detection mark to correct a working location
shift due to movement of the sample;

detect a location of any one of the location detection marks, which is to be included in a second sample image after the movement
of the sample stage, as a reference mark, from the location detection marks included in the first sample image before the
movement of the sample stage;

switch the sample image from the first sample image which includes a processed working region to the second sample image which
includes an unprocessed working region by moving the sample stage;

perform working of the unprocessed working region by irradiating the sample with the ion beam on the second sample image while
detecting a location of the reference mark in the sample image after the movement of the sample stage; and

control an emission location of the focused ion beam based on the reference mark to correct a working location shift due to
movement of the sample stage.

US Pat. No. 9,829,447

X-RAY FLUORESCENCE ANALYZER AND METHOD OF DISPLAYING SAMPLE THEREOF

Hitachi High-Tech Science...

1. An X-ray fluorescence analyzer comprising:
a sample stage on which a sample is placed;
a sample moving mechanism configured to move the sample stage;
an X-ray source configured to irradiate the sample with a primary X-ray;
a detector configured to detect a fluorescent X-ray generated from the sample irradiated with the primary X-ray;
an imaging device configured to image the sample on the sample stage;
a display device which displays the image obtained by the imaging device on a screen;
a pointing device configured to designate a specific position on the screen for allowing an input at the specific position;
an image processing device configured to display a mark at the input position on the screen by the pointing device; and
a control device configured to:
control the sample moving mechanism and the image processing device; and
when the sample stage is moved by the sample moving mechanism, control the image processing device to display the mark on
the screen with moving the mark in the same moving direction as that of the sample stage by the same moving distance;

wherein the control device has a function of storing position data of the mark corresponding onto the sample stage based on
the input position and the image on the screen, and

wherein after the mark is moved out of a display area of the screen due to the movement of the sample stage, when the mark
based on the position data of the mark is positioned within the display area again due to a further movement of the sample
stage, the image processing device displays the mark in the display area again based on the position data of the mark.

US Pat. No. 9,349,572

ENERGY DISPERSIVE X-RAY ANALYZER AND METHOD FOR ENERGY DISPERSIVE X-RAY ANALYSIS

Hitachi High-Tech Science...

1. An energy dispersive X-ray analyzer attached to a scanning electron microscope, the energy dispersive X-ray analyzer comprising:
a SEM controller configured to control electron beam scanning of a sample by the scanning electron microscope;
a detector configured to detect X-rays generated from the sample by being irradiated with an electron beam;
an EDS controller configured to process electrical signal pulses that are output from the detector; and
a data processor configured to generate an X-ray mapping image based on the processed electrical signal pulses and to control
a display unit to display the generated X-ray mapping image,

wherein the data processor generates a first X-ray mapping image when the SEM controller controls the scanning electron microscope
to irradiate the sample with an electron beam under a first acceleration voltage condition,

wherein the data processor generates a second X-ray mapping image when the SEM controller controls the scanning electron microscope
to irradiate the sample with an electron beam under a second acceleration voltage condition that is different from the first
acceleration voltage condition,

wherein the data processor is configured to correct the first X-ray mapping image and the second X-ray mapping image into
images that are independent of acceleration voltage conditions based on a measurement intensity variation ratio of the X-ray
when changed from the first acceleration voltage condition to the second acceleration voltage condition, the measurement intensity
variation ratio being obtained from different excitation efficiency values of generated X-rays under the first acceleration
voltage condition and the second acceleration voltage condition, and

wherein the data processor is configured to control the display unit to display a difference image between the corrected first
X-ray mapping image and the corrected second X-ray mapping image.

US Pat. No. 9,287,087

SAMPLE OBSERVATION METHOD, SAMPLE PREPARATION METHOD, AND CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A sample observation method for observing an observation surface of a sample by irradiation of a charged particle beam,
the method comprising:
placing a sample stage at a first tilt angle with respect to the charged particle beam, and irradiating the observation surface
with the charged particle beam to acquire a first charged particle image;

tilting the sample stage to a second tilt angle different from the first tilt angle about a first sample stage axis, and irradiating
the observation surface with the charged particle beam to acquire a second charged particle image;

comparing an area of the observation surface in the first charge particle image with an area of the observation surface in
the second charged particle image;

calculating, as a result of the comparison, a tilt angle as an optimum tilt angle of the sample stage at which the area of
the observation surface in the charged particle image is the largest among first charged particle image and the second charged
particle image;

tilting the sample stage to the calculated optimum tilt angle; and
irradiating the observation surface with the charged particle beam to observe the observation surface.

US Pat. No. 9,275,827

CHARGED PARTICLE BEAM APPARATUS HAVING NEEDLE PROBE THAT TRACKS TARGET POSITION CHANGES

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a charged particle beam column configured to irradiate an irradiation target with a charged particle beam;
a detector configured to detect secondary charged particles emitted from the irradiation target by the irradiation with the
charged particle beam;

an image processor configured to produce image data indicating a two-dimensional distribution of intensity of the secondary
charged particles detected by the detector;

a display device configured to display the image data produced by the image processor;
a needle arranged in an irradiation area of the charged particle beam;
a needle actuator configured to actuate the needle;
a user interface configured to receive an operation input of an operator and set a target position of the needle on the image
data in accordance with the operation input; and

a controller configured to control the needle actuator to actuate the needle in accordance with the target position that is
set by the user interface,

wherein the controller controls the needle actuator to move the needle to track a change of the target position that is set
by the user interface.

US Pat. No. 9,245,712

FOCUSED ION BEAM SYSTEM

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam system comprising:
a gas field ion source which includes an emitter with a sharp tip, and is configured to ionize a gas at the tip of the emitter
to generate gas ions;

an ion gun unit which is configured to accelerate the gas ions and radiate the gas ions as an ion beam while extracting the
gas ions toward a sample;

a beam optical system which includes at least a focusing lens electrode, and is configured to radiate the ion beam onto the
sample while focusing the ion beam; and

an image acquiring mechanism which is configured to acquire an FIM image of the tip of the emitter based on the ion beam,
wherein the image acquiring mechanism includes:
an alignment electrode which is disposed between the ion gun unit and the focusing lens electrode, and is configured to adjust
a radiation direction of the ion beam;

an alignment control unit which is configured to apply an alignment voltage to the alignment electrode;
a storage unit which is configured to store the acquired FIM image; and
an image processing unit which is configured to perform image processing to combine a plurality of FIM images to generate
one composite FIM image, wherein the plurality of FIM images are acquired when applying different alignment voltages and are
stored in the storage unit.

US Pat. No. 9,595,420

METHOD FOR PREPARING LAMELLA

HITACHI HIGH-TECH SCIENCE...

1. A lamella preparation method of preparing a lamella having a thickness of 100 nm or smaller by performing processing of
a sample using a focused ion beam, the lamella preparation method comprising:
irradiating a focused ion beam onto a sample to form a lamella having an upper side having a thickness of 100 nm or smaller
and a lower side having a thickness larger than that of the upper side;

irradiating an electron beam onto the lamella to form an observation image;
setting a first measurement region on the upper side of the lamella and a second measurement region on the lower side of the
lamella in the observation image, the first and second measurement regions being set at locations where the lamella is thin
enough to transmit therethrough the electron beam;

irradiating the electron beam onto the first measurement region and the second measurement region and detecting charged particles
generated therefrom;

calculating a slant angle of the lamella of one degree or smaller based on (a) a difference between the thickness of the first
measurement region, which is estimated from a detected amount of the charged particles generated from the first measurement
region, and the thickness of the second measurement region, which is estimated from a detected amount of the charged particles
generated from the second measurement region, and (b) the distance between the first measurement region and the second measurement
region;

slanting the lamella with respect to the focused ion beam by the slant angle so that a first surface of the lamella is parallel
with an irradiation axis of the focused ion beam; and

irradiating the focused ion beam onto a second surface of the lamella, which is opposite to the first surface, to perform
finish processing to uniformize the thickness of the lamella to a value of 100 nm or smaller.

US Pat. No. 9,384,941

CHARGED PARTICLE BEAM APPARATUS AND SAMPLE OBSERVATION METHOD

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
an electron beam column configured to irradiate a sample with an electron beam;
an ion beam column, which is disposed substantially perpendicular to the electron beam column, and which is configured to
irradiate the sample with an ion beam to perform an etching process;

a detector configured to detect a charged particles generated from the sample;
an image forming unit configured to form a charged particle image by using detection signals from the detector;
a first sample stage, which is configured to hold the sample, and which is movable to be tilted;
a second sample stage, which has a sample holder configured to hold a sample piece cut off from the sample, which is movable
to be tilted, and which is configured to move the sample holder in a direction substantially perpendicular to an irradiation
axis of the electron beam to an irradiated area of the electron beam; and

a probe that is rotatable about an axis while holding the sample piece.

US Pat. No. 9,400,255

X-RAY FLUORESCENCE SPECTROMETER COMPRISING A GAS BLOWING MECHANISM

Hitachi High-Tech Science...

1. An X-ray fluorescence spectrometer comprising:
a sample stage configured to place a sample thereon;
an X-ray source configured to irradiate the sample with primary X-rays;
a detector, which is configured to detect fluorescent X-rays produced from the sample irradiated with the primary X-rays,
and which comprises an X-ray incident window formed by a window material through which fluorescent X-rays are transmittable;
and

a gas blowing mechanism comprising a passage extending along a periphery of the detector up to the X-ray incident window and
configured to blow gas through the passage to an outer surface of the X-ray incident window.

US Pat. No. 9,368,323

CHARGED PARTICLE BEAM DEVICE, CONTROL METHOD FOR CHARGED PARTICLE BEAM DEVICE, AND CROSS-SECTION PROCESSING OBSERVATION APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam device comprising:
a charged particle beam column comprising:
a charged particle beam generation-focusing portion configured to generate and focus a charged particle beam; and
a deflector configured to perform scanning with the charged particle beam in a two-dimensional direction;
a charged particle beam control unit, which is configured to control the charged particle beam generation-focusing portion
and the deflector, and which comprises a digital/analog converter for converting an input digital signal into an analog signal
that is to be input to the deflector; and

a field-of-view setting unit configured to set a value of a field of view of the charged particle beam where the scanning
by the deflector is performed on the basis of a set value of a slice amount, the field-of-view setting unit being configured
to set a value of one-nth of the slice amount, where n is a first natural number, as an input digital value “1” of the digital/analog
converter and to set a value obtained by multiplying said value set as the input digital value “1” by a second natural number
as a value of the field of view.

US Pat. No. 9,111,717

ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. An ion beam apparatus comprising:
an ion source configured to emit an ion beam;
a condenser lens electrode configured to form a condenser lens for condensing the ion beam;
a condenser lens power source configured to apply a voltage to the condenser lens electrode;
a storage portion configured to store,
a first voltage value to be applied to the condenser lens electrode and corresponding to an observation mode of irradiating
a sample with the ion beam to observe the sample,

a second voltage value to be applied to the condenser lens electrode and corresponding to a processing mode of irradiating
the sample with the ion beam having a larger current amount than a current amount in the observation mode,

a third voltage value to be applied to the condenser lens electrode and corresponding to a wide-range observation mode of
irradiating the sample with the ion beam in a wider range than a range in the observation mode, and

a fourth voltage value to be applied to the condenser lens electrode and corresponding to the wide-range observation mode
and being closer to the second voltage value with respect to the third voltage value; and

a control portion configured to retrieve the third voltage value from the storage portion and set the retrieved third voltage
value to the condenser lens power source only when the observation mode is switched to the wide-range observation mode, and
retrieve the fourth voltage value from the storage portion and set the retrieved fourth voltage value to the condenser lens
power source only when the processing mode is switched to the wide-range observation mode.

US Pat. No. 9,500,524

ICP EMISSION SPECTROMETER

Hitachi High-Tech Science...

4. An ICP emission spectrometer comprising:
an inductively coupled plasma generation unit configured to obtain atomic emission lines by atomizing or ionizing an analysis-targeted
element using inductively coupled plasma;

a spectroscope comprising a diffraction grating, wherein the spectroscope is configured to diffract and detect the atomic
emission lines;

a two-dimensional detection unit comprising an image sensor having a detection surface on which multiple pixels are laid in
a planar shape, wherein the two-dimensional detection unit is configured to detect emission light by causing the emission
light emitted from the spectroscope to be imaged on the multiple pixels;

a controller configured to:
determine a pixel used in detecting the emission light from among the multiple pixels at a position which conforms to an imaging
shape of the emission light on the detection surface;

drive the diffraction grating to move the imaging shape of the emission light imaged on the detection surface so as to obtain
a wavelength profile of the emission light,

wherein when a position of the imaging shape of the emission light on the detection surface overlaps with a position of an
estimated shape on predetermined pixels of the multiple pixels while driving the diffraction grating to move the imaging shape
of the emission light, the estimated shape having been determined by a prior analysis or a prior measurement, the controller
is configured to determine an overlapping position of the imaging shape of the emission light and the estimated shape as a
peak top position of the wavelength profile.

US Pat. No. 9,080,945

CROSS-SECTION PROCESSING AND OBSERVATION METHOD AND CROSS-SECTION PROCESSING AND OBSERVATION APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A cross-section processing and observation method performed by a cross-section processing and observation apparatus, the
method comprising: a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a
cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with
an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation
images of a plurality of cross-sections formed substantially parallel with each other at predetermined intervals, wherein,
in a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a
specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of
a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified
material is performed, and wherein the changing of the irradiation condition includes changing the predetermined intervals
to be smaller.

US Pat. No. 9,354,248

METHOD FOR MEASURING VIBRATION CHARACTERISTIC OF CANTILEVER

HITACHI HIGH-TECH SCIENCE...

1. A method for measuring vibration characteristic of a cantilever, the method comprising:
measuring vibration amplitude V of a cantilever installed in a scanning probe microscope when vibration with a resonant frequency
f1 (Hz) is applied to the cantilever;

obtaining a time Th (second) when the vibration amplitude V is equal to or more than 0.90 of a stationary amplitude V0; and
calculating a Q value by using the following Expression (1):
Q value=f1×Th.  (1)

US Pat. No. 9,810,649

X-RAY FLUORESCENCE ANALYZER

Hitachi High-Tech Science...

1. An X-ray fluorescence analyzer comprising:
a sample stage having a mounting surface on which a sample is mounted;
an X-ray source configured to irradiate the sample with primary X-rays and disposed immediately above an irradiation position
of the sample;

a detector configured to detect fluorescent X-rays emitted from the sample irradiated with the primary X-rays;
a shielding container configured to accommodate the sample stage, the X-ray source, and the detector and includes:
a sample chamber configured to accommodate the sample stage;
a door provided at a top of the sample chamber and configured to open and close at least a front half of the sample chamber,
wherein the X-ray source and the detector are disposed at a rear half of the sample chamber;
a hood section disposed on the shielding container at the rear half thereof and connected to the shielding container; and
a vertical moving mechanism configured to vertically move the X-ray source and the detector and move the X-ray source and
the detector between a first position inside the shielding container and a second position inside the hood section.

US Pat. No. 9,719,949

X-RAY FLOURESCENT ANALYZER

Hitachi High-Tech Science...

1. An X-ray fluorescent analyzer comprising:
an X-ray tube that irradiates a sample with a primary X-ray;
a detector that detects a fluorescent X-ray emitted from the sample irradiated with the primary X-ray;
a sample stage on which a sample plate for X-ray analysis is installed, the sample plate including:
a plate-like body that supports the sample; and
a code-indicated portion provided on the plate-like body in which information on the sample is encoded and indicated;
an imaging unit that captures an image of the code-indicated portion; and
a code processor that operates to:
decode the information encoded in the code-indicated portion based on the image of the code-indicated portion captured by
the imaging unit; and

update a calibration curve based on the decoded information.

US Pat. No. 9,378,858

REPAIR APPARATUS

Hitachi High-Tech Science...

1. A repair apparatus comprising:
a gas field ion source which includes an ion generation section including a sharpened tip;
a cooling unit which is configured to cool the tip;
an ion beam column which is configured to form a focused ion beam by focusing ions of a gas generated in the gas field ion
source;

a gas supply section which is configured to supply a gas to be ionized to the ion generation section, the gas supply section
including a container which is configured to store and supply each of a plurality of gas species;

a sample stage which is configured to move while a sample to be irradiated with the focused ion beam formed by the ion beam
column is placed thereon;

a sample chamber which is configured to accommodate at least the sample stage therein; and
a control unit which is configured to repair a mask or a mold for nano-imprint lithography, which is the sample, with the
focused ion beam formed by the ion beam column,

wherein the gas field ion source is configured to generate nitrogen ions as the ions, and the tip is constituted by an iridium
single crystal capable of generating the ions,

wherein the gas supply section stores at least nitrogen and hydrogen as the plurality of gas species, and
wherein the control unit is configured to use a hydrogen ion beam as the focused ion beam in a case where a mask for extreme
ultraviolet light exposure is repaired as the mask, and to use a nitrogen ion beam as the focused ion beam in a case where
a photomask is repaired as the mask.

US Pat. No. 9,810,648

X-RAY FLUORESCENCE ANALYZER AND X-RAY FLUORESCENCE ANALYZING METHOD

HITACHI HIGH-TECH SCIENCE...

1. An X-ray fluorescence analyzer comprising:
a sample stage having a mounting surface on which a sample is mounted;
an X-ray source configured to irradiate the sample with the primary X-rays and disposed immediately above an irradiation position
of the sample;

a detector configured to detect fluorescent X-rays emitted from the sample irradiated with the primary X-rays;
an X stage configured to move the sample stage in an X direction that is parallel to the mounting surface;
a Y stage configured to move the sample stage in a Y direction that is parallel to the mounting surface and perpendicular
to the X direction;

a ? stage configured to have a rotation center at the center of the mounting surface and to rotate the sample stage around
a rotation axis perpendicular to the mounting surface; and

a shielding container configured to accommodate the sample stage, the X-ray source, the detector, the X stage, the Y stage,
and the ? stage,

wherein the irradiation position with the primary X-rays is set at an offset position from a movement center of the X stage
and the Y stage,

wherein an irradiation area that is irradiatable with the primary X-rays is set to a selected segmented area, in which the
irradiation position is disposed, from among segmented areas that are defined by segmenting the surface of the sample into
four parts with a virtual segment line in the X direction and a virtual segment line in the Y direction passing through the
movement center when the X stage and the Y stage are moved in a state in which the ? stage is not moved, and

wherein the ? stage is configured to switch the selected segmented area as the irradiation area into any one of the segmented
areas by rotating the sample stage by every 90 degrees.

US Pat. No. 9,793,092

CHARGED PARTICLE BEAM APPARATUS AND PROCESSING METHOD

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a charged particle beam column configured to irradiate a charged particle beam to a first region and a second region of a
sample, the second region included in the first region;

a controller configured to control the charged particle beam column to irradiate the charged particle beam to the first region
and the second region of the sample, the first region including a plurality of first pixels at a first pixel interval, each
of the first pixels including a first predetermined number of first sub-pixels, the second region including a plurality of
second pixels at a second pixel interval different from the first pixel interval, each of the second pixels including a second
predetermined number of second sub-pixels, wherein the controller is configured to control the charged particle beam column
to irradiate the charged particle beam to each of the first sub-pixels at the first pixel interval for the first region and
to irradiate the charged particle beam to each of the second sub-pixels at the second pixel interval for the second region;

a secondary electron detector configured to detect first secondary electrons for each of the first sub-pixels generated by
irradiating the charged particle beam to each of the first sub-pixels at the first pixel interval for the first region, to
generate a first signal of the first secondary electrons for each of the first sub-pixels, to detect second secondary electrons
for each of the second sub-pixels generated by irradiating the charged particle beam to each of the second sub-pixels at the
second pixel interval for the second region, and to generate a second signal of the second secondary electrons for each of
the second sub-pixels; and

an image forming unit configured to form first sub-pixel images by using the first signal, the number of the first sub-pixel
images being the first predetermined number, to generate a first image by synthesizing the predetermined number of the first
sub-pixel images, and to form second sub-pixel images by using the second signal, the number of the second sub-pixel images
being the second predetermined number, to generate a second image by synthesizing the predetermined number of the second sub-pixel
images.

US Pat. No. 9,966,226

CROSS-SECTION PROCESSING AND OBSERVATION METHOD AND CROSS-SECTION PROCESSING AND OBSERVATION APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A cross-section processing and observation apparatus comprising:a sample stage configured to place a sample thereon;
an ion beam column configured to irradiate the sample with an ion beam;
an electron beam column configured to irradiate the sample with an electron beam;
a secondary electron detector configured to detect secondary electrons generated from the sample;
an Energy Dispersive X-ray Spectrometry (EDS) detector configured to detect an X-ray generated from the sample; and
a control unit configured to automatically change an irradiation condition of the ion beam in a case where an X-ray is generated from a defect which exists in a certain predetermined slice interval before a slice processing and is detected by the EDS detector during a slice processing and observation process, the slice processing and observation process including:
a slice processing step of forming a cross-section by irradiating the sample with the ion beam,
a cross-section observation step of obtaining an observation image of the cross-section based on the secondary electrons or the X-ray generated from the cross-section by irradiating the cross-section with the electron beam, and
repeating the slice processing step and the cross-section observation step so as to obtain observation images of the plurality of cross-sections formed substantially parallel with each other at predetermined intervals, wherein
the control unit is configured to change, as the irradiation condition, the predetermined slice intervals to be smaller, and
the control unit includes a three-dimensional image construction unit configured to construct a three-dimensional image based on the obtained observation images.

US Pat. No. 9,897,579

METHOD FOR CORRECTING EVOLVED GAS ANALYZER AND EVOLVED GAS ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. A method for correcting an evolved gas analyzer analyzing evolved gas by using a mass spectrometer which detects a gas
component evolved by heating a sample including the gas component as a measurement target through performing mass analysis
of an ion generated by ionizing the gas component, the method comprising:
correcting a mass spectrum position to match a reference spectrum position, the mass spectrum position corresponding to a
mass-to-charge ratio m/z of a mass spectrum obtained as to the gas component of the reference sample;

after the correcting the mass spectrum position, calculating a sensitivity correction factor Cs=Ss/S at the time an area of
a chromatogram of the gas component of the actual sample is measured from an area S, showing an intensity with respect to
a retention time obtained as to the gas component of the reference sample, and a reference area Ss of a chromatogram; and

calculating a heating correction factor H=t/ts, correcting a heating rate of the sample in a heating unit evolving the gas
component by heating the sample at the time the gas component of the sample is measured, from a time t, indicating a maximum
peak of the chromatogram, and a reference time ts.

US Pat. No. 10,014,155

MICROSAMPLE STAGE AND METHOD OF MANUFACTURING THE SAME

HITACHI HIGH-TECH SCIENCE...

1. A microsample stage which fixes a microsample when the microsample is analyzed by an analyzer, comprising:a base;
a plurality of middle supports which protrude from an upper surface of the base;
a microsample-fixing portion which protrudes from an upper surface of each middle support and which has a lengthwise direction and a widthwise direction; and
an alignment mark associated with each microsample-fixing portion and formed on an upper surface of the microsample-fixing portion
wherein at least two of the microsample-fixing portions are provided with the respective alignment marks in a one-to-one correspondence manner; and
wherein the alignment marks are arranged at a periphery portion of respective ones of the microsample-fixing portions in the lengthwise direction and are arranged to deviate from the center portion of respective ones of the microsample-fixing portions in the widthwise direction.

US Pat. No. 9,753,509

IMAGING APPARATUS FOR THERMAL ANALYZER AND THERMAL ANALYZER INCLUDING THE SAME

Hitachi High-Tech Science...

1. An imaging apparatus for a thermal analyzer which images a heated sample inside a thermal analyzer main body section from
an observation window provided in the thermal analyzer main body section, the imaging apparatus comprising:
an imaging device that is provided with a lens housing and a main body section;
a holding section configured to hold the imaging device to have an orientation in which the lens housing is oriented toward
the observation window, and the main body section is positioned on an opposite side of the observation window across the lens
housing; and

a cooling fan configured to provide airflow inside the holding section,
wherein the holding section is provided with a cooling air passage having an intake portion and an exhaust portion,
wherein at least a portion of the lens housing is arranged in the cooling air passage to be cooled by the airflow provided
by the cooling fan, and

wherein the exhaust portion is opened toward a tip end side of the lens housing in an axial direction and toward the observation
window so as to surround outer circumference of the lens housing, and cooling air is discharged from the exhaust portion to
the tip end side of the lens housing in the axial direction.

US Pat. No. 9,823,208

METHOD FOR MEASURING SPREADING RESISTANCE AND SPREADING RESISTANCE MICROSCOPE

Hitachi High-Tech Science...

1. A method for measuring spreading resistance of a sample, the method comprising:
removing at least a part of an oxide formed on a surface of the sample by relatively scanning the surface of the sample in
X and Y directions parallel to the surface while bringing a probe into contact with the surface of the sample;

detecting a signal by bringing the probe into contact with the surface of the sample from which at least a part of the oxide
is removed at a predetermined detection position in the X direction or the Y direction while a bias voltage is applied to
the sample;

calculating a spreading resistance value based on the signal; and
retracting the probe to keep the probe relatively away from the surface in a Z direction perpendicular to the surface while
relatively moving the probe to a next detection position to start scanning the sample from the next detection position.

US Pat. No. 9,773,634

IRIDIUM TIP, GAS FIELD ION SOURCE, FOCUSED ION BEAM APPARATUS, ELECTRON SOURCE, ELECTRON MICROSCOPE, ELECTRON BEAM APPLIED ANALYSIS APPARATUS, ION-ELECTRON MULTI-BEAM APPARATUS, SCANNING PROBE MICROSCOPE, AND MASK REPAIR APPARATUS

Hitachi High-Tech Science...

1. A gas field ion source comprising:
an iridium tip comprising a pyramid structure, wherein an apex portion of the pyramid structure has an apex with <210> orientation
surrounded by one {100} crystal plane and two {111} crystal planes,

wherein the pyramid structure includes a first layer composed of a single iridium atom constituting the apex of the pyramid
structure, a second layer immediately below the first layer and composed of three iridium atoms located at vertices of a triangle,
and a third layer immediately below the second layer and composed of six iridium atoms located at vertices and sides of a
triangle,

wherein the crystal planes of the pyramid structure are defined by the iridium atoms of the first, second, and third layer,
and

wherein the iridium tip is an emitter which is configured to emit an ion beam;
an ion source chamber which accommodates the emitter;
a gas supply section which is configured to supply a gas to be ionized, to the ion source chamber;
an extraction electrode which is configured to ionize the gas to generate ions of the gas and apply a voltage for extracting
the ions of the gas from the emitter; and

a temperature control section which is configured to cool the emitter.

US Pat. No. 9,689,893

SCANNING PROBE MICROSCOPE

HITACHI HIGH-TECH SCIENCE...

1. A scanning probe microscope comprising:
a cantilever provided with a probe that approaches or comes in contact with a surface of a sample;
a sample stage that supports the sample thereon;
a three-dimensional moving mechanism that three-dimensionally moves the sample stage; and
a measurement chamber having an internal space that is sealed not to be exposed to external air,
wherein at least the cantilever, the sample stage, and the three-dimensional moving mechanism are accommodated in the measurement
chamber,

wherein the measurement chamber includes: an introduction hole through which the sample stage is introduced into the measurement
chamber; and a pair of guide rails that transport the sample stage introduced through the introduction hole to a predetermined
position in the measurement chamber,

wherein the sample stage is provided with an engagement portion that is engaged with the guide rails and is installed to travel
along the guide rails,

wherein the three-dimensional moving mechanism is installed in the vicinity of the predetermined position, is installed to
move up above the guide rails and down below the guide rails between the pair of guide rails, and

wherein when the sample stage is transported to the predetermined position, the three-dimensional moving mechanism is lifted
from below the guide rails and mounted to a bottom surface of the sample stage so that measurement of the sample is performed.

US Pat. No. 9,831,077

METHOD FOR ANALYZING EVOLVED GAS AND EVOLVED GAS ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. An evolved gas analyzer comprising:
a heating unit evolving a gas component by heating a sample,
a detecting means detecting the gas component evolved by the heating unit, and
a gas channel making connection between the heating unit and the detecting means in which mixed gas of the gas component and
carrier gas, carrying the gas component to the detecting means, flows,

wherein the gas channel comprises a branching channel open to outside, the branching channel comprises a discharge flow rate
controlling device, adjusting flow rate of the mixed gas discharged to outside, and the evolved gas analyzer further comprises
a flow rate control device controlling the discharge flow rate controlling device based on a detection signal from the detecting
means so as to bring the detection signal to be within a given range.

US Pat. No. 9,820,370

HEAT TRANSFER SYSTEM FOR AN INDUCTIVELY COUPLED PLASMA DEVICE

Hitachi High-Tech Science...

1. An inductively coupled plasma analysis device configured to obtain an atomic emission line by using inductively coupled
plasma so as to excite or ionize an element, the inductively coupled plasma analysis device comprising:
a plasma torch to which carrier gas containing a target element is guided, the plasma torch including an opening from which
plasma is generated;

a high frequency induction coil wound around the plasma torch;
a horizontal input block or an axial input block configured to receive a part of light of the plasma generated in the plasma
torch;

a spectroscope configured to detect the light having passed through the horizontal input block or the axial input block;
a heat transfer member having a first terminal and a second terminal, the first terminal being connected to the high frequency
induction coil; and

a cooling block connected to the second terminal of the heat transfer member,
wherein operating fluid is enclosed in the heat transfer member, the operating fluid being evaporated through the first terminal
by heat generated by the high frequency induction coil to form steam, the steam of the operating fluid moving toward the second
terminal so as to move the heat generated by the high frequency induction coil toward the second terminal, and the steam being
condensed at the second terminal so that the condensed operating fluid moves toward the first terminal,

wherein at least one of an exhaust duct chimney and the axial input block is disposed above the plasma torch such that the
at least one of the exhaust duct chimney and the axial input block overlaps the opening of the plasma torch in a vertical
direction, the exhaust duct chimney configured to exhaust heat of the plasma generated in the plasma torch and/or a reaction
product, and

wherein the cooling block is connected to the at least one of the exhaust duct chimney and the axial input block.

US Pat. No. 9,741,535

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a stage for fixing a sample;
a driving device configured to drive the stage;
an ion beam column configured to irradiate the sample with an ion beam;
an electron beam column configured to irradiate the sample with an electron beam;
a detector configured to detect secondary particles emitted from the sample irradiated with the ion beam or the electron beam;
a gas supplying device configured to supply gas for forming a deposition film on a surface of the sample; and
a control device configured to:
control the electron beam column to irradiate the sample with the electron beam;
convert a first detection amount of the secondary particles detected by the detector into a first brightness signal by irradiating
the sample with the electron beam;

generate first image data based on the first brightness signal, the first image data indicating a first position distribution
of the secondary particles detected by the detector;

recognize an alignment mark provided in the first image data,
perform positioning of an irradiation region of the sample with respect to the electron beam using the alignment mark recognized
in the first image data;

determine a relative positional relationship between the alignment mark recognized in the first image data and the irradiation
region of the sample;

control the ion beam column to irradiate the sample with the ion beam;
convert a second detection amount of the secondary particles detected by the detector into a second brightness signal by irradiating
the sample with the ion beam;

generate second image data based on the second brightness signal, the second image data indicating a second position distribution
of the secondary particles detected by the detector;

recognize the alignment mark provided in the sample in the second image data; and
perform positioning of the irradiation region of the sample with respect to the ion beam using the alignment mark recognized
in the second image data and the relative positional relationship.

US Pat. No. 9,947,506

SAMPLE HOLDER AND FOCUSED ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A sample holder, which is a side-entry type sample holder insertable and removable to and from a sample chamber of a focused ion beam apparatus, and which enables holding of a fine sample piece at a tip end side, the sample holder comprising:a main body portion having a substantially bar shape and extending along an x-axis direction; and
a sample holding portion formed at one end portion of the main body portion in the x-axis direction, the sample holding portion comprising:
a first beam member and a second beam member, which are disposed to be separated in a z-axis direction orthogonal to an x axis, and which extend in the x-axis direction;
a mesh support member, which is disposed between the first beam member and the second beam member, and which has an opening portion enabling support of a mesh member, the mesh member being configured to hold the fine sample piece;
shaft members formed in the mesh support member, each of the shaft members respectively protruding toward the first beam member and the second beam member in the z-axis direction; and
a through hole formed in the mesh support member and at least one of the shaft members, the through hole penetrating a space between the opening portion and a shaft end surface of the at least one of the shaft members in the z-axis direction for introducing a focused ion beam toward the fine sample piece.

US Pat. No. 9,899,198

METHOD FOR ANALYZING EVOLVED GAS AND EVOLVED GAS ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. A method for analyzing evolved gas using a mass spectrometer which detects a gas component evolved by heating a sample
through performing mass analysis of an ion generated by ionizing the gas component, using apparatus, the method comprising:
a discharged flow rate adjusting process, adjusting a flow rate of mixed gas of the gas component and carrier gas carrying
the gas component to the mass spectrometer, discharged outside of a branching channel opened to outside, based on a detection
signal received from the mass spectrometer so as to bring the detection signal within a given range wherein the branching
channel is provided to a gas channel connecting a heating unit to the mass spectrometer through which the mixed gas flows,
and the heating unit receives a sample holder holding the sample therein and evolves a gas component by heating the sample;

a sample holder cooling process, cooling the sample holder by bringing the sample holder into direct or indirect contact with
a cooling unit placed outside of the heating unit, when the sample holder is moved to a discharging position at which the
sample can be put in and taken out; and

a correction process, using a reference sample including the gas component as a measurement target, comprising:
correcting a mass spectrum position to match a reference spectrum position, the mass spectrum position corresponding to a
mass-to-charge ratio m/z of a mass spectrum obtained as to the gas component of the reference sample;

after correcting the mass spectrum position, calculating a sensitivity correction factor Cs=Ss/S at the time an area of a
chromatogram of the gas component of the actual sample is measured, from an area S, showing an intensity with respect to a
retention time obtained as to the gas component of the reference sample, and a reference area Ss; and

calculating a heating correction factor H=t/ts correcting a heating rate of the sample in the heating unit at the time the
gas component of the actual sample is measured, from a time t, indicating a maximum peak of the chromatogram, and a reference
time ts.

US Pat. No. 9,726,611

STABILIZED ICP EMISSION SPECTROMETER AND METHOD OF USING

Hitachi High-Tech Science...

1. An ICP emission spectrometer comprising:
an inductively-coupled plasma generator configured to atomize or ionize an analysis-targeted element using inductively coupled
plasma to obtain atomic emission lines;

a light condenser configured to converge the atomic emission lines;
a spectroscope configured to detect the atomic emission lines by diffracting light after receiving the atomic emission lines
through a light incident window;

a detector configured to detect the light passing through the spectroscope;
a detector controller configured to control a voltage applied to the detector and an application time of the voltage; and
an input device for receiving an operation input of analysis conditions corresponding to the analysis-targeted element,
wherein the detector controller is configured to:
stabilize the detector by controlling, prior to a sample containing the analysis-targeted element into the inductively-coupled
plasma generator the voltage applied to the detector and the application time thereof based on an idle voltage and an idle
voltage application time corresponding to an expected power amount obtained from an analysis voltage applied to the detector
and an analysis voltage application time under the analysis conditions during a period from when the analysis conditions are
input to the input device until a sample containing the analysis-targeted element will be introduced into the inductively-coupled
plasma generator.

US Pat. No. 9,640,361

EMITTER STRUCTURE, GAS ION SOURCE AND FOCUSED ION BEAM SYSTEM

HITACHI HIGH-TECH SCIENCE...

1. In a gas field ion source, an emitter structure comprising:
a base member to which are fixed two conductive pins;
a filament having two end portions connected to respective ones of the two conductive pins;
a supporting member connected to the base member; and
an emitter having a tip end with one atom or three atoms, the emitter being supported by the supporting member and connected
to the filament.

US Pat. No. 10,056,227

FOCUSED ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

10. A focused ion beam apparatus comprising:a sample chamber;
a sample tray disposed in the sample chamber for supporting a sample, the sample tray being movable along an x-axis, a y-axis perpendicular to the x-axis, and a z-axis perpendicular to the x-axis and the y-axis;
a focused ion beam column disposed in the sample chamber for irradiating the sample, while supported on the sample tray, with a focused ion beam to obtain a micro sample-piece;
a carrier insertable into and out of the sample chamber, the carrier having a front end portion configured to hold the micro sample-piece when the carrier is inserted into the sample chamber; and
a sample-piece moving unit disposed in the sample chamber and configured to move the micro sample-piece from the sample tray to the front end portion of the carrier,
wherein the sample tray has a carrier engagement part configured to releasably engage with the carrier when the carrier is inserted a predetermined distance into the sample chamber to transmit movement of the sample tray along the x-axis, y-axis and z-axis to the carrier so that movement of the sample tray is accompanied by corresponding movement of the carrier.

US Pat. No. 10,018,578

X-RAY ANALYSIS DEVICE

Hitachi High-Tech Science...

1. An X-ray analysis device comprising:an excitation source which excites a sample to be analyzed to emit characteristic X-rays;
a plurality of detection units which detect the characteristic X-rays emitted from the sample;
an optical member which guides the characteristic X-rays emitted from the sample to at least any one of the plurality of detection units; and
a distance changing mechanism which changes a distance between each of the plurality of detection units and the optical member in an axial direction of an optical axis of the optical member,
wherein the plurality of detection units include at least a first detection unit and a second detection unit having different detection characteristics,
the first detection unit is formed such that energy resolution is given relative priority over counting efficiency in contrast to the second detection unit, and
the second detection unit is formed such that counting efficiency is given relative priority over energy resolution in contrast to the first detection unit.

US Pat. No. 9,885,645

THERMAL ANALYZER

Hitachi High-Tech Science...

1. A thermal analyzer comprising:
a furnace tube made of a transparent material in a cylindrical shape, the furnace tube having an outlet on an anterior end
portion thereof in an axial direction;

a sample holder that is arranged in the furnace tube and comprises a mounting face on which a sample container containing
a measurement sample is mounted;

a heating furnace configured to have a cylindrical shape and to surround the furnace tube from outside;
a measurement chamber connected air-tight to the furnace tube at a posterior end portion of the furnace tube in the axial
direction;

a measurement unit arranged inside the measurement chamber and configured to measure changes in physical properties of the
measurement sample; and

a first gap jig and a second gap jig configured to maintain a gap between the heating furnace and the furnace tube in a radial
direction in a predetermined distance,

wherein the heating furnace comprises a fixing section to be fixed to the furnace tube,
wherein the furnace tube is configured to be attachable to and detachable from the heating furnace,
wherein the furnace tube comprises an engagement portion that is configured to be engaged with the fixing section at a variable
position in the radial direction, and

wherein the first gap jig and a second gap jig are configured to be detachable from the heating furnace and the furnace tube
in a case that the furnace tube is inserted into the heating furnace and the fixing section engages with the engagement portion
of the furnace tube while the first gap jig and a second gap jig are interposed between the heating furnace and the furnace
tube at a front end side and at a rear end side of the furnace tube to maintain the gap between the heating furnace and the
furnace tube in the radial direction in the predetermined distance.

US Pat. No. 9,766,267

ACTUATOR POSITION CALCULATION DEVICE, ACTUATOR POSITION CALCULATION METHOD, AND ACTUATOR POSITION CALCULATION PROGRAM

Hitachi High-Tech Science...

1. A device for calculating a position of an actuator, the actuator comprising: a movement mechanism configured to move in
one direction in proportion to a control signal generated for each minimum movement amount ?M; and a movement amount detection
sensor configured to detect a movement amount of the movement mechanism in a minimum resolution ?S, where A=?S/?M?2, the device
comprising:
a processor; and
a memory storing instructions, the instructions, when executed by the processor, causing the device to perform:
generating the control signal for a driving power source to drive the movement mechanism each minimum movement amount ?M;
acquiring the control signal for each ?M and a sensor signal generated by the movement amount detection sensor having the
minimum resolution ?S;

calculating a position SA of the movement mechanism at a target position from:
a value of (S0+m×?S) or (S0?m×?S);
a number n of generated control signals from a control signal M0 to a control signal at a time point T1 or to a control signal
generated right before T1; and

a value of A=?S/?M,
where the time point at which the sensor signal becomes (S0+m×?S) or (S0?m×?S) is denoted by T1, where m is a natural number
of 1 or more and 1?n?m×A, and the control signal at the target position of the movement mechanism is denoted by M0 and the
sensor signal is denoted by S0; and

controlling movement of the movement mechanism based on the calculated position SA.

US Pat. No. 9,721,753

CHARGED PARTICLE BEAM APPARATUS AND PROCESSING METHOD

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:
a charged particle beam column configured to irradiate a charged particle beam to a first region and a second region of a
sample, the second region included in the first region;

a controller configured to control the charged particle beam column to irradiate the charged particle beam to the first region
and the second region of the sample, the first region including a plurality of first pixels at a first pixel interval, each
of the first pixels including a first predetermined number of first sub-pixels, the second region including a plurality of
second pixels at a second pixel interval different from the first pixel interval, each of the second pixels including a second
predetermined number of second sub-pixels, wherein the controller is configured to control the charged particle beam column
to irradiate the charged particle beam to each of the first sub-pixels at the first pixel interval for the first region and
to irradiate the charged particle beam to each of the second sub-pixels at the second pixel interval for the second region;

a secondary electron detector configured to detect first secondary electrons for each of the first sub-pixels generated by
irradiating the charged particle beam to each of the first sub-pixels at the first pixel interval for the first region, to
generate a first signal of the first secondary electrons for each of the first sub-pixels, to detect second secondary electrons
for each of the second sub-pixels generated by irradiating the charged particle beam to each of the second sub-pixels at the
second pixel interval for the second region, and to generate a second signal of the second secondary electrons for each of
the second sub-pixels; and

an image forming unit configured to form first sub-pixel images by using the first signal, the number of the first sub-pixel
images being the first predetermined number, to generate a first image by synthesizing the predetermined number of the first
sub-pixel images, and to form second sub-pixel images by using the second signal, the number of the second sub-pixel images
being the second predetermined number, to generate a second image by synthesizing the predetermined number of the second sub-pixel
images.

US Pat. No. 9,645,100

X-RAY FLUORESCENCE ANALYSIS APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. An X-ray fluorescence analysis apparatus comprising:
an excitation source configured to excite an analysis target sample to emit a characteristic X-ray;
an X-ray detector configured to detect the characteristic X-ray emitted from the analysis target sample; and
an electromagnetic wave shield and a heat shield that are sequentially arranged from the analysis target sample toward the
X-ray detector,

wherein the electromagnetic wave shield comprises a through hole portion on which a through hole through which the characteristic
X-ray passes is formed, the through hole having a size equal to or smaller than 50 ?m, and

wherein the heat shield comprises a window portion through which the characteristic X-ray is passed through.

US Pat. No. 9,612,214

X-RAY FLUORESCENCE ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. An X-ray fluorescence analyzer comprising:
an X-ray source;
an irradiation area restricting member that restricts an area of a measurement sample to be irradiated with an X ray emitted
as a primary X-ray from the X-ray source;

a detector that detects a secondary X-ray generated from the measurement sample;
a calibration sample for calibrating a device including the X-ray source, the irradiation area restricting member, and the
detector;

a sample stage on which the measurement sample is mounted, the sample stage arranging the measurement sample at a position
in which a surface of the measurement sample faces the irradiation area restricting member with a predetermined distance from
the irradiation area restricting member on an irradiation axis of the primary X-ray; and

a calibration sample moving mechanism including holding the calibration sample at a retraction position which is an arbitrary
position deviated from a route of the primary X-ray and a spatial position during sample measurement, and moving the calibration
sample from the retraction position to a same irradiation position of the measurement sample having a same predetermined irradiation
distance by the primary X-ray which separates the measurement sample from the irradiation area restricting member, wherein
the calibration sample moving mechanism being configured to be independent from the sample stage.

US Pat. No. 10,088,402

THERMO-GRAVIMETRIC APPARATUS

Hitachi High-Tech Science...

1. A thermo-gravimetric apparatus comprising:a furnace tube made of a transparent material in a cylindrical shape, the furnace tube having an outlet at an anterior end portion thereof in an axial direction that is parallel with a horizontal direction;
a measurement chamber connected air tight to a posterior end portion of the furnace tube in the axial direction;
a pair of sample holders arranged inside the furnace tube and each comprising a mounting face on which a pair of sample containers, each containing a measurement sample and a reference sample, are mounted respectively;
a pair of balance arms that are housed inside the furnace tube and supported at a position inside the measurement chamber, the balance arms having an anterior end connected to the sample holders and a posterior end extending in the horizontal direction toward an inside of the measurement chamber;
a heating furnace configured to have a cylindrical shape, the heating furnace including:
a cylindrical outer wall;
a furnace core tube that has a cylindrical shape and that surrounds the furnace tube from an exterior of the furnace tube, the furnace core tube being disposed within the cylindrical outer wall, the furnace core tube having an axis in a direction along the axial direction, a first surface facing an outer wall of the furnace tube, and a second surface facing away from the furnace tube;
a heater that is fitted to the second surface of the furnace core tube, wherein the heater is disposed within the cylindrical outer wall; and
a cylindrical outer cylinder that surrounds the heater and having side walls at both ends; and
a measurement unit arranged inside the measurement chamber and configured to measure changes in physical properties of the measurement sample and the reference sample,
wherein the heating furnace comprises an opening through which the measurement sample and the reference sample are observable, the opening penetrating through the cylindrical outer wall and the furnace core tube and being located at a position above the center of a virtual segment which connects centers of gravity of the mounting faces of the sample holders, and
wherein the heater does not overlap the opening in a radial direction heating furnace.

US Pat. No. 9,793,085

FOCUSED ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus at least equipped with a gas field ion source having an emitter for emitting ions, wherein
the emitter has a shape in which a sharpened end part made of iridium is fixed to a cylinder shape base part made of dissimilar
wire.

US Pat. No. 9,791,392

X-RAY FLUORESCENCE ANALYZER AND MEASUREMENT POSITION ADJUSTING METHOD THEREFORE

Hitachi High-Tech Science...

1. An X-ray fluorescence analyzer comprising:
a sample stage on which a sample subjected to an analysis is mounted;
an X-ray source configured to irradiate the sample with primary X-rays;
a detector configured to detect fluorescent X-rays emitted from the sample irradiated with the primary X-rays;
an imaging unit configured to capture an image of a predetermined field-of-view area on the sample stage;
a display unit configured to display the predetermined field-of-view area of the image captured by the imaging unit; and
a pointer irradiation unit configured to irradiate the sample stage with a visible light at an irradiation position within
an area that is outside the predetermined field-of-view area and near the predetermined field-of-view area.

US Pat. No. 9,784,700

X-RAY ANALYZER

Hitachi High-Tech Science...

1. A fluorescent X-ray analyzer comprising:
a sample stage on which a sample is placed;
an X-ray source configured to irradiate the sample with primary X-rays;
a detector configured to detect secondary X-rays generated from the sample irradiated with the primary X-rays;
a position adjustment mechanism configured to adjust relative positions of the sample stage and the primary X-rays;
an observation mechanism for obtaining an observation image of the sample on the sample stage; and
a computer configured to control the position adjustment mechanism, wherein the computer comprises:
a display unit that displays the sample observation image on an observation screen; and
an input unit for inputting a position on a screen of the display unit with a pointer and for performing a drag-and-drop operation,
the input unit including at least one input element configured to change between a held state and a released state,

wherein the computer has a function of, in response to the pointer being moved from inside a central region of the observation
screen to a certain position outside of the central region by the input unit being dragged while maintaining the at least
one input element in the held state, driving the position adjustment mechanism in a movement direction and at a movement speed
corresponding to a direction and a distance of the certain position relative to the central region, so as to move the sample
stage,

wherein the sample stage is driven to move at a first speed when the distance of the certain position relative to the central
region is a first distance, and

wherein the sample stage is driven to move at a second speed, greater than the first speed, when the distance of the certain
position relative to the central region is a second distance greater than the first distance.

US Pat. No. 9,721,749

X-RAY GENERATOR AND FLUORESCENT X-RAY ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. An X-ray generator, comprising:
an X-ray tube radiating primary X-rays to a specimen;
a housing accommodating the X-ray tube;
an X-ray radiation area controller limiting a radiation area of the primary X-rays from the X-ray tube to the specimen; and
a device holder holding the X-ray radiation area controller with respect to the housing,
wherein the X-ray tube includes a vacuumized case, an electron ray source disposed as a cathode in the case and generating
electron rays, and a target unit disposed as an anode facing the electron ray source in the case, with a base fixed to the
case, and receiving electron rays through a protruding free end,

the device holder has a fixed-base fixed to the housing, directly under the base of the target unit, and a supporting extension
extending from the fixed-base in a protrusion direction of the target unit and supporting the X-ray radiation area controller,

a thermal expansion rate in an extension direction of the supporting extension from the fixed-base in the same direction as
the protrusion direction of the target unit is the same as a thermal expansion rate in the protrusion direction of the target
unit, and

a distance from a portion of the supporting extension fixed to the housing to a central axis of the X-ray radiation area controller
is the same as a distance from the base to an X-ray generation position at the free end of the target unit.

US Pat. No. 10,088,401

AUTOMATIC SAMPLE PREPARATION APPARATUS

Hitachi High-Tech Science...

1. An automatic sample preparation apparatus which automatically prepares a sample piece from a sample, comprising:a charged particle beam irradiation optical system configured to perform irradiation with a charged particle beam;
a sample stage configured to move with the sample placed thereon;
a sample piece transfer device for holding and transferring the sample piece separated and extracted from the sample;
a sample piece holder-fixing bed configure to hold a sample piece holder to which the sample piece is transferred;
a gas supply portion configured to irradiate gas forming a deposition film with the charged particle beam; and
a computer configured to control the charged particle beam irradiation optical system, the sample piece transfer device, and the gas supply portion to transfer the sample piece to the sample piece holder, based on at least an image which is previously acquired by the charged particle beam with respect to the sample piece held by the sample piece transfer device.

US Pat. No. 10,014,157

METHOD FOR ACQUIRING IMAGE AND ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A method for acquiring an image, in which an image of an image acquiring region is acquired by radiating an ion beam to a sample having a conducting part with a linear edge on a dielectric substrate, the method including:a first operation of performing an equal-width scan by the ion beam in a first direction that obliquely intersects the edge and sweep in a second direction intersecting the first direction, and radiating the ion beam to a scan region of a parallelogram shape which is wider than and which includes the image acquiring region;
a second operation of detecting secondary charged particles generated by radiating the ion beam and generating an image data of the scan region;
a third operation of calculating the image data of the scan region and thereby generating an image data of the image acquiring region; and
a fourth operation of displaying the image data of the image acquiring region, wherein
the first operation is performed a plurality of times to different scan regions of the parallelogram shape each of which includes the image acquiring region by changing at least one of a scan direction of the equal-width scan and a sweep direction of the sweep and setting the output of the ion beam such that a total amount of irradiation of the ion beam in the image acquiring region becomes an amount of irradiation required when an image is acquired by one sweep;
the second operation is performed after the first operation is performed each of the plurality of times; and
the third operation generates the image data of the image acquiring region by synthesizing a plurality of image data based on the image data of a plurality of the scan regions generated by the second operation performed a plurality of times.

US Pat. No. 9,934,940

CONTROL DEVICE, CHARGED PARTICLE BEAM APPARATUS, PROGRAM AND METHOD FOR PRODUCING PROCESSED PRODUCT

Hitachi High-Tech Science...

1. A control device for controlling a charged particle beam apparatus, the charged particle beam apparatus comprising a workpiece stage having at least two turning axes which are not parallel to each other and an irradiation unit for processing a workpiece on the workpiece stage by irradiating a charged particle beam from a predetermined direction, the control device comprising:an angle calculation unit that based on a direction of a first processing in which a processed surface having a normal line not parallel to any of the turning axes is generated in the workpiece by the irradiation unit and a direction of a second processing to be processed by the irradiation unit from a direction different from the direction of the first processing with respect to the processed surface to be generated by the first processing, calculates turning angles about the turning axes that change the direction of the workpiece stage from the direction of the first processing to the direction of the second processing.

US Pat. No. 9,885,639

SAMPLE CARRYING DEVICE AND VACUUM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A sample carrying device comprising:
a sample carrying rod configured to carry a sample in a predetermined direction in a vacuum chamber;
a support body supporting the sample carrying rod;
a case supporting the support body such that the support body can rotate around a rotational axis perpendicular to the predetermined
direction; and

a seal disposed between the support body and the case for sealing the vacuum chamber,
wherein the sample carrying rod can be switched by rotation of the support body between a use state, where the sample carrying
rod can carry the sample, and a stowed state, where the sample carrying rod has been moved to a predetermined position from
the use state so that a first end of the sample carrying rod is positioned outside the vacuum chamber and inside the support
body, and

wherein on outer sides of the case, a slit is formed in a plane perpendicular to the rotational axis to receive the sample
carrying rod.

US Pat. No. 9,863,896

X-RAY TRANSMISSION INSPECTION APPARATUS

Hitachi High-Tech Science...

1. An X-ray transmission inspection apparatus comprising:
an X-ray source configured to irradiate a sample with an X-ray;
a detector configured to be disposed on a side opposite to the X-ray source with respect to the sample and to detect the X-ray
which is transmitted through the sample using a phosphor;

a shield member configured to be arranged to face a detection surface of the detector and to block a part of the X-ray to
partially form a detection area and a shield area on the detection surface, the detection area on which the X-ray is irradiated,
and the shield area being shielded from the X-ray; and

a shield moving mechanism that operates to perform a switching sequence including:
moving the shield member relative to the detector from a first position to a second position, wherein the first position is
a position at which the detection surface of the detector is divided into an initial detection area and an initial shield
area, and wherein the second position is a position at which at least a part of the initial detection area becomes a new shield
area and at least a part of the initial shield area becomes a new detection area; and

maintaining the shield member at the second position for a time period that is long enough to restore the phosphor used in
the detector within the initial detection area while allowing the detector to detect the X-ray with the detection surface
that has become the new detection area.

US Pat. No. 9,658,175

X-RAY ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. An X-ray analyzer comprising:
a sample stage on which a sample is disposed;
an X-ray source configured to irradiate the sample with a primary X-ray at a first angle;
a detector configured to detect a secondary X-ray generated from the sample by being irradiated with the primary X-ray;
a position adjustment mechanism configured to adjust a relative position between the sample stage and the primary X-ray;
a first light source configured to emit a first light beam at a second angle toward a focal position of the primary X-ray
or toward a predetermined position which is apart from the focal position at a predetermined distance and at the same height
as the focal position in a horizontal direction; and

a second light source configured to emit a second light beam at a third angle toward the focal position or toward the predetermined
position, the third angle being different from the first angle and the second angle,

wherein the first light beam and the second light beam are configured to have visibility sufficient for enabling visual distinction
between the first light beam and the second light beam on the sample stage or on the sample disposed on the sample stage when
the first light beam and the second light beam are irradiated on the sample stage or on the sample disposed on the sample
stage.

US Pat. No. 10,054,555

X-RAY TRANSMISSION INSPECTION APPARATUS AND INSPECTION METHOD USING THE SAME

HITACHI HIGH-TECH SCIENCE...

1. An X-ray transmission inspection apparatus comprising:an X-ray source irradiating a sample with X-rays;
a sample moving device moving the sample continuously in predetermined direction while X-rays are emitted from the X-ray source;
a time delay integration sensor (TDI sensor) provided opposed to the X-ray source with respect to the sample, and detecting the X-rays transmitted through the sample;
a distance sensor measuring a distance between the X-ray source and the sample; and
a TDI controller controlling the TDI sensor by changing a charge transfer speed of the TDI sensor in real time based on variations in the distance measured by the distance sensor.

US Pat. No. 9,865,425

SAMPLE HOLDER AND SAMPLE HOLDER SET

HITACHI HIGH-TECH SCIENCE...

1. A sample holder which holds a sample such that a surface of the sample is exposed and, can be mounted in each of multiple
measurement devices that perform measurement based on different measurement principles respectively so that properties of
the sample can be measured by each of the measurement devices, the sample holder comprising:
a main body that surrounds the sample;
alignment marks that are arranged at each of two or more different positions on a surface of the main body and can be detected
by the measurement devices; and

a sample-retaining portion that is disposed within the main body and retains the sample such that a height difference between
a mark surface of the alignment mark and the surface of the sample is set to a predetermined value,

wherein the height difference between the mark surface of the alignment mark and the surface of the sample is set within a
range of a focal depth of the each of the measurement devices.

US Pat. No. 9,683,951

SAMPLE HOLDER FOR X-RAY ANALYSIS AND JIG FOR SAMPLE INSTALLATION

Hitachi High-Tech Science...

1. A sample holder for X-ray analysis comprising:
a first annular member;
a second annular member configured to be inserted and fitted into the first annular member in a state where a first film is
sandwiched between the first annular member and the second annular member while the first film is being stretched to cover
a lower opening portion of the second annular member; and

a third annular member configured to be inserted and fitted into the second annular member in a state where a second film
is sandwiched between the second annular member and the third annular member while the second film is being stretched to cover
a lower opening portion of the third annular member,

wherein the first film being stretched to cover the lower opening portion of the second annular member and the second film
being stretched to cover the lower opening portion of the third annular member are configured to hold a sample for X-ray analysis
by sandwiching the sample between the first film and the second film,

wherein the third annular member is configured to have a height higher than that of the second annular member, and
wherein the sample holder further comprises:
an elastic ring configured to be mounted above the second annular member and on an outer peripheral surface of the third annular
member in a state where an outer peripheral edge portion of the second film is sandwiched between the elastic ring and the
outer peripheral surface of the third annular member to attach the second film to the third annular member.

US Pat. No. 9,645,170

SCANNING PROBE MICROSCOPE

HITACHI HIGH-TECH SCIENCE...

1. A scanning probe microscope comprising:
a cantilever including a lever having a tip at a first end of the lever and a support (chip) supporting a second end of the
lever, the support including a first surface by which the lever is supported and a second surface including a first attachment
surface, the second surface opposite to the first surface;

a cantilever attachment portion including a second attachment surface to which the first attachment surface of the cantilever
is attached; and

columnar elements including one of a nanofiber and a nanotube, the columnar elements on at least one of the first attachment
surface and the second attachment surface,

wherein the columnar elements extend from at least one of the first attachment surface and the second attachment surface in
a direction perpendicular to the corresponding at least one first attachment surface and second attachment surface and adhere
the second attachment surface to the first attachment surface by an adhesion force, and are configured to detach by a force
applied in a direction parallel to the at least one first attachment surface and second attachment surface that weakens the
adhesion force.

US Pat. No. 10,096,449

CROSS-SECTION PROCESSING-AND-OBSERVATION METHOD AND CROSS-SECTION PROCESSING-AND-OBSERVATION APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A cross-section processing-and-observation method comprising:a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample;
a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section,
a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images, including a first sectional image and a second sectional image, of the sample; and
a specific observation target detection step of detecting a predetermined specific observation target,
wherein an area of the second sectional image is set within an area of the first sectional image,
wherein the second sectional image is acquired with a magnification higher than a magnification with which the first sectional image is acquired,
wherein in the specific observation target detection step, after a predetermined specific observation target is detected, a condition setting of the cross-section exposure step and a condition setting of the cross-sectional image acquisition step are updated, and
wherein when the condition setting of the cross-section exposure step is updated, the setting interval is set to be shorter than that before the specific observation target is detected.

US Pat. No. 10,161,958

THREE-DIMENSIONAL FINE MOVEMENT DEVICE

Hitachi High-Tech Science...

1. A scanning probe microscope having a three-dimensional fine movement device, the three-dimensional fine movement device comprising:a moving body comprising a cantilever;
a fixation member to which the moving body is fixed, the fixation member comprising a cantilever attachment unit, a diffraction grating being attached to the cantilever attachment unit;
a three-dimensional fine movement unit comprising a piezoelectric three-axis scanner having a plurality of piezoelectric elements including a first piezoelectric element configured to linearly move the scanner in an X direction independently of a Z direction, a second piezoelectric element configured to linearly move the scanner in a Y direction independently of the Z direction, and a third piezoelectric element configured to linearly move the scanner in the Z direction independently of the X and Y directions, wherein the fixation member is fixed to the three-dimensional fine movement unit, and wherein the three-dimensional fine movement unit allows for the three-dimensional fine movement of the moving body with the fixation member interposed therebetween in the Z direction orthogonal to an X-Y plane defined by the X and Y directions, wherein the piezoelectric scanner is configured to move the moving body in the X-Y plane independently of moving the moving body along the Z direction;
a three-dimensional coarse movement unit comprising another scanner different from the piezoelectric three-axis scanner, three-dimensional coarse movement unit comprising an X-component coarse movement unit, a Y-component coarse movement unit, and a Z-component coarse movement unit, wherein the three-dimensional fine movement unit is directly fixed to the Z-component coarse movement unit, and the three-dimensional coarse movement unit providing coarse movement of the three-dimensional fine movement unit on at least one axis of three-dimensional axes at a movement amount greater than that of the three-dimensional fine movement unit;
a base member to which the three-dimensional coarse movement unit is fixed, wherein the three-dimensional fine movement unit is disposed between the Z-component coarse movement unit and both of the X-component coarse movement unit and Y-component coarse movement unit in the Z direction, and wherein the three-dimensional fine movement unit is fixed to the base member via the Z-component coarse movement unit; and
a movement amount detector that is fixed to the Z-component coarse movement unit of the three-dimensional coarse movement unit, the movement amount detector being configured to detect a movement amount of the fixation member, the movement amount detector comprising a non-contact optical sensor configured to detect the diffraction grating, wherein the non-contact optical sensor is disposed facing a side face of the fixation member, the fixation member being configured to move independently of and relative to the non-contact optical sensor in each of the three dimensions.

US Pat. No. 10,056,232

CHARGED PARTICLE BEAM APPARATUS AND PLASMA IGNITION METHOD

Hitachi High-Tech Science...

1. A charged particle beam apparatus comprising:a gas introduction chamber, into which raw gas is introduced;
a plasma generation chamber connected to the gas introduction chamber;
a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied;
an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein;
a plasma electrode that is provided apart from the electrode;
a detection unit for detecting whether or not the plasma has been ignited in the plasma generation chamber; and
a controller that controls, based on the result of detection by the detection unit, a voltage to be supplied to the plasma electrode in association with a predetermined pressure for supplying the raw gas.

US Pat. No. 9,620,333

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus that automatically prepares a sample piece from a sample, the charged particle beam apparatus
comprising:
a charged particle beam irradiation optical system that irradiates a charged particle beam;
a movable sample stage on which a sample is placed and moved;
a sample piece transferring unit that holds and transfers a sample piece that is separated and extracted from the sample;
a holder support that holds a sample piece holder to which the sample piece is transferred; and
a computer configured to control a position of an object based on a template prepared from an image of the object acquired
by irradiation with the charged particle beam and position information acquired from the image of the object,

wherein the sample piece transferring unit includes a needle that transfers the sample piece that is separated and extracted
from the sample, and a needle actuating mechanism that actuates the needle, and

wherein the computer controls the needle actuating mechanism so as to approach the needle to the sample piece using the template
formed from an absorbed current image acquired by irradiating the needle with the charged particle beam.

US Pat. No. 10,048,216

X-RAY ANALYZER

HITACHI HIGH-TECH SCIENCE...

1. An X-ray analyzer comprising:an excitation source for exciting a sample to be analyzed to radiate a characteristic X-ray;
an X-ray detector that detects the characteristic X-ray;
a collimator that regulates a range of the characteristic X-ray incident to the X-ray detector;
at least one window that is provided between the sample and the X-ray detector and allows the characteristic X-ray to pass through; and
a cooling unit that cools the window to a temperature that is lower than an atmospheric temperature,
wherein the window is laminated with one or more layers of an aluminum film and one or more layers of an insulating film,
wherein a total thickness of the aluminum film of the at least one window is equal to or greater than 150 nm and is less than 300 nm, and
wherein a size of an aperture of the collimator is 300 ?m or less.

US Pat. No. 9,934,938

FOCUSED ION BEAM APPARATUS, METHOD FOR OBSERVING CROSS-SECTION OF SAMPLE BY USING THE SAME, AND STORAGE MEDIUM

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising:a focused ion beam irradiation mechanism configured to irradiate a sample with a focused ion beam in a direction perpendicular to the sample surface to form an inclined surface that begins at the sample surface and ends at a depth in the sample and thereafter form at the depth end of the inclined surface a first cross-section and a plurality of second cross-sections at predetermined intervals from the first cross-section and substantially parallel to the first cross-section, the first cross-section and the second cross-sections each beginning at the sample surface and ending at a depth in the sample and being formed by subjecting the sample to removal processing with the focused ion beam;
a charged particle beam column configured to irradiate the first cross-section and the second cross-sections with a charged particle beam;
a first detector configured to detect reflected particles or secondary electrons emitted due to irradiation of the charged particle beam on the first cross-section and the second cross-sections;
a second detector configured to detect X-rays or secondary ions emitted due to irradiation of the charged particle beam on the first cross-section and the second cross-sections; and;
a control section configured to:
generate a first image of the first cross-section and of the second cross-sections based on data detected by the first detector, the first image including a reflected electron image or a secondary electron image;
generate a second image of the first cross-section based on data detected by the second detector, the second image including an EDS image or a secondary ion image of the first cross-section;
determine whether the first image of the second cross-sections includes a region different from a region representing a specific composition in the first image of the first cross-section based on a contrast of the first image;
control the second detector to detect X-rays or secondary ions emitted due to irradiation of the charged particle beam on the second cross-sections when determined that the first image of the second cross-sections includes the region different from the region representing the specific composition in the first image of the first cross-section;
generate a second image of the second cross-sections based on the detected X-rays or secondary ions, the second image including an EDS image or a secondary ion image of the second cross-sections when determined that the first image of the second cross-sections includes the region different from the region representing the specific composition in the first image of the first cross-section;
generate a second image of the second cross-sections, when not determined that the first image of the second cross-sections includes the region different from the region representing the specific composition in the first image of the first cross-section, based on the first image of the first cross-section, the first image of the second cross-sections and the second image of the first cross-section, without controlling the second detector to detect X-rays or secondary ions emitted due to irradiation of the charged particle beam on the second cross-sections; and
generate a three-dimensional distribution pattern of a specific composition present in the sample based on the first images and the second images which include the region representing the specific composition.

US Pat. No. 9,921,241

SCANNING PROBE MICROSCOPE AND MEASUREMENT RANGE ADJUSTING METHOD FOR SCANNING PROBE MICROSCOPE

Hitachi High-Tech Science...

1. A scanning probe microscope comprising:
a cantilever having a probe that is to be contacted or approached on a surface of a sample;
a displacement detector that detects a signal indicating a displacement of the cantilever;
a probe microscope controller that acquires measurement data based on the signal while the surface of the sample is relatively
scanned with the probe and while maintaining a predetermined physical quantity between the cantilever and the surface of the
sample constant; and

a processor that operates to perform a process including:
calculating a measurement width MW and an offset value OV from a minimum value Smin and a maximum value Smax of the signal with the following Equations (1) and (2) when a prescanning operation of roughly scanning the surface of the
sample with the probe is performed before the measurement data is acquired by the probe microscope controller, wherein

MW=(Smax?Smin)  Equation (1)

OV=(MW/2)+Smin  Equation (2); and

adjusting at least one of the offset value OV and the measurement width MW based on a temporal variation of the signal at
the same position on the surface of the sample when the prescanning operation is performed.

US Pat. No. 10,312,051

COMPOSITE CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A composite charged particle beam apparatus comprising:a first charged particle beam column configured to irradiate a thin sample with a first charged particle beam;
a second charged particle beam column configured to irradiate an irradiation position of the first charged particle beam of the thin sample with a second charged particle beam;
a sample holder configured to hold the thin sample; and a sample stage on which the sample holder is mounted,
wherein the sample holder is configured to oscillate the thin sample on the sample stage along a circular locus having a first rotational axis and within a surface which is parallel to an observation surface of the thin sample, and through which an irradiation axis of the first charged particle beam column passes.

US Pat. No. 10,176,964

FOCUSED ION BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A focused ion beam apparatus comprising:an ion source that emits an ion beam;
an extraction electrode that extracts ions from a tip end of an emitter of the ion source, the extraction electrode comprising a first extraction electrode having a first hole diameter and a second extraction electrode having a second hole diameter, the first hole diameter being smaller than the second hole diameter; and
a first lens electrode that configures a condenser lens by a potential difference with the extraction electrode, the condenser lens facing the extraction electrode and being configured to focus the ions extracted by the extraction electrode,
wherein a strong lens action is generated between the extraction electrode and the first lens electrode so as to focus all ions extracted from the ion source to pass through the condenser lens including the first lens electrode.

US Pat. No. 10,163,602

ION BEAM SYSTEM

Hitachi High-Tech Science...

1. An ion beam system comprising:a gas field ionization ion source which includes:
a vacuum vessel;
an emitter tip holder disposed in the vacuum vessel;
an emitter tip connected to the emitter tip holder;
an extraction electrode opposed to the emitter tip;
a gas supply portion for supplying a gas to the emitter tip; and
a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder,
wherein a heat insulating material covers an outer surface of the cold transfer member in order to prevent condensation of the gas.

US Pat. No. 10,151,773

SCANNING PROBE MICROSCOPE AND PROBE CONTACT DETECTION METHOD

Hitachi High-Tech Science...

1. A scanning probe microscope for scanning a surface of a sample with a probe by bringing the probe into contact with the surface of the sample, comprisinga cantilever having the probe at its tip;
a displacement detection unit to detect both a bending amount and a torsion amount of the cantilever;
a contact determination unit to determine a primary contact of the probe with the surface of the sample, based on the bending amount and the torsion amount detected by the displacement detection unit in all directions from an undeformed condition of the cantilever;
a measuring unit to measure a relative distance that is a distance by which one of the probe and the surface of the sample is forced to move relative to the other when they are forced to bring into contact with each other;
a movement driving unit to move the probe backwards in a direction away from the sample and to move it to a next measurement position of the sample after the relative distance has been measured by the measuring unit; and
a calculation unit to calculate a distance by which the probe is moved backwards in the direction away from the sample, based on the bending amount and the torsion amount; and
wherein the movement driving unit includes, a XY scanner which, after said backwards movement, moves the probe to a before-lowering position for measurement which is positioned directly above the next measurement position and which is not brought into contact with the probe, and a Z-direction driving device which lowers the probe from the before-lowering position for measurement to the next measurement position.

US Pat. No. 10,485,087

PORTABLE INFORMATION TERMINAL, BEAM IRRADIATION SYSTEM, AND PROGRAM

HITACHI HIGH-TECH SCIENCE...

1. A portable information terminal separate from a charged particle beam irradiation apparatus for performing processing of a sample by irradiating the sample with a charged particle beam, the portable information terminal comprising:a display controller causing a display unit to display an image containing a graphical user interface (GUI) capable of operating a first operation item based on operation by a user, the first operation item being a part of operation items among a plurality of operation items operable in the charged particle beam irradiation apparatus; and
an output controller causing an output unit to output an output of a type according to the first operation item assigned to the GUI operated by the user, wherein
different first operation items are assigned to the GUI, and
the output unit is a speaker, and the output controller causes the output unit to output an audible sound of the type as the output of the type.

US Pat. No. 10,345,335

SCANNING PROBE MICROSCOPE AND SCANNING METHOD THEREOF

Hitachi High-Tech Science...

1. A scanning probe microscope in which a probe is brought into contact with a surface of a sample and the probe intermittently scans the surface of the sample, comprising:a cantilever having the probe at a tip of the cantilever;
a driving unit configured to perform a separating operation for separating one of the sample and the probe from the other in a direction that the sample and the probe come apart each other, at a speed exceeding a response speed of the cantilever, from a state where the probe is in contact with the surface of the sample;
a determination unit configured to determine that the probe is separated from the surface of the sample in a case where vibration of the cantilever at a predetermined amplitude is detected at a resonant frequency of the cantilever during the separating operation; and
a driving control unit configured to stop the separating operation by the driving unit at a moment of time when the determination unit determines that the probe is separated from the surface of the sample and relatively move the probe and the sample to a position where the probe is located on a next measuring point of the sample.

US Pat. No. 10,309,903

ICP EMISSION SPECTROPHOTOMETER

Hitachi High-Tech Science...

1. An ICP emission spectrophotometer comprising:an inductively coupled plasma device configured to atomize or ionize an analysis target element with inductively coupled plasma to produce an atomic emission light;
a spectroscope comprising:
an incidence side slit provided on an incidence window to which the atomic emission light is incident;
a diffraction grating diffracting the incident atomic emission light;
an emission side slit provided on an emission window from which emitted light is emitted, the emitted light being diffracted light of atomic emission light diffracted by the diffraction grating; and
a detector configured to detect the emitted light emitted from the emission side slit; and
a display device configured to display a diffraction condition including a diffraction order for the atomic emission light in the spectroscope,
wherein the diffraction condition is given in a form in which combinations are comparable with each other, each of the combinations including a candidate diffraction grating and at least an intensity and a resolution of the emitted light for a specific diffraction order of the candidate diffraction grating.

US Pat. No. 10,186,398

SAMPLE POSITIONING METHOD AND CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A sample positioning method of positioning a target observation area of a sample, which is disposed on a sample stage in a sample chamber of a charged particle beam apparatus, into a field of view of a first charged particle beam radiated from a charged particle beam optical optics installed in a first charged particle beam column, the method including:displaying an image of inside of the sample chamber including the sample on the sample stage therein on a display screen of a display unit;
designating an attention point on the target observation area on the basis of the image on the display screen, wherein the attention point moves along with the sample stage so as to maintain the relative position of the attention point with respect to the sample stage by calculating the coordinates of the attention point on the display after movement of the sample stage and displaying the attention point after movement of the sample stage;
aligning the sample stage in a direction of a first optical axis so that the attention point is positioned on an on-axis point tracer plane perpendicular to the first optical axis through an on-axis target point on the first optical axis of the first charged particle beam column;
after positioning the attention point on the on-axis point tracer plane, performing detection of deviation of the attention point from the on-axis target point on the display screen and movement of the sample stage within the on-axis point tracer plane only in a direction perpendicular to the first optical axis, and moving the attention point to the on-axis target point; and
after moving the attention point to the on-axis target point, moving the attention point within the depth of focus of the charged particle beam optical optics by moving the sample stage along the first optical axis.
US Pat. No. 10,466,271

SCANNING PROBE MICROSCOPE AND OPTICAL AXIS ADJUSTMENT METHOD FOR SCANNING PROBE MICROSCOPE

Hitachi High-Tech Science...

1. A scanning probe microscope comprising:a cantilever that includes a reflecting surface that reflects light and a probe to be approximate to a surface of a sample;
a cantilever supporting portion to which the cantilever is attached and supports the cantilever at a predetermined attachment angle with respect to a horizontal plane;
a movement mechanism that moves a position of the cantilever;
a light source that emits detection light;
a detector that receives the detection light reflected on the reflecting surface of the cantilever and detects a position and a displacement of the cantilever based on the received detection light;
an objective lens that is provided at a position facing the cantilever and the sample for capturing an image of a vicinity of the cantilever through the objective lens; and
a controller that controls the movement mechanism to perform a process including: detecting a spot position of a spot light of the detection light captured through the objective lens in a state where the cantilever is not attached to the cantilever supporting portion only when a shape of the spot light captured through the objective lens has a predetermined degree of circularity or more;
detecting a position of the cantilever from an image captured through the objective lens; and
controlling the movement mechanism based on the spot position, the position of the cantilever, an incident angle of the detection light, and the attachment angle such that the detection light is reflected on the reflecting surface when the cantilever is attached to the cantilever supporting portion,
wherein the controller detects a centroid of the spot light captured by the objective lens as the spot position and detects a centroid of the cantilever and a direction of a long axis of the cantilever as the position of the cantilever.

US Pat. No. 10,401,342

EVOLVED GAS ANALYZER AND METHOD FOR ANALYZING EVOLVED GAS

HITACHI HIGH-TECH SCIENCE...

1. An evolved gas analyzer, comprising:a sample holder, holding a sample;
a heating furnace, receiving the sample holder therein, and evolving a gas component by heating the sample;
a detecting means detecting the gas component evolved by the heating furnace;
a sample holder supporting unit supporting the sample holder so as to enable moving the sample holder to given positions inside and outside of the heating furnace; and
a cooling unit placed outside of the heating furnace, cooling the sample holder by direct or indirect contact with the sample holder, when the sample holder is moved to a discharging position at which the sample can be put in or taken out,
wherein the cooling unit comprises a cooling block in contact with the sample holder, an air cooling fan, air cooling fins and a fan duct, cooling the cooling block,
the air cooling fins are connected to a floor portion and a side surface of the cooling block,
the air cooling fan is placed at a lower part of the air cooling fin connected to the floor portion of the cooling block, and
the fan duct extends from the air cooling fan towards outside of the air cooling fin connected to the side surface of the cooling block, and forms an air guiding plate guiding cooling air from the air cooling fan to the air cooling fins.

US Pat. No. 10,330,649

TWO-DIMENSIONAL LIQUID CHROMATOGRAPHIC ANALYZER AND ANALYTICAL METHOD

HITACHI HIGH-TECH SCIENCE...

1. A two-dimensional liquid chromatographic analyzer comprising:a liquid feed part configured to feed a mobile phase;
an injection part configured to inject a sample;
a first separation column configured to separate and fractionate the sample containing a plurality of components;
a second separation column configured to separate the fractionated components;
a first temperature control part configured to control temperature of the first separation column;
a second temperature control part configured to control temperature of the second separation column;
a detection part configured to detect the separated components,
wherein the first temperature control part comprises a holder made of metal and configured to hold the first separation column so as to transmit a temperature change of the first temperature control part to the first separation column,
wherein the first separation column is a temperature-responsible gel modification separation column having a functional polymer layer whose surface nature is reversibly changed between hydrophilic nature and hydrophobic nature by temperature modulation.

US Pat. No. 10,242,842

METHOD FOR CROSS-SECTION PROCESSING AND OBSERVATION AND APPARATUS THEREFOR

HITACHI HIGH-TECH SCIENCE...

1. A method for cross-section processing and observation, the method comprising:a process of obtaining position information, by observing the entirety of a sample of observation target through a confocal stereoscopic microscope, obtaining an approximate three-dimensional position coordinate information of a particular observation target object included in the sample;
a process of cross-section processing, based on the three-dimensional position coordinate information, by irradiating a focused ion beam towards a particular region in which the particular observation target object is present in the sample, exposing a cross-section of the particular region;
a process of obtaining a cross-sectional image, by irradiating an electron beam on the cross-section, obtaining an image of a region of a predetermined size including the particular observation target object; and
a process of generating a three-dimensional image, by repeatedly performing the process of cross-section processing and the process of obtaining a cross-sectional image at predetermined intervals along a predetermined direction a plurality of times, constructing a three-dimensional image including the particular observation target object from a plurality of the cross-sectional images obtained.

US Pat. No. 10,236,159

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus automatically preparing a sample piece from a sample, the charged particle beam apparatus comprising:a plurality of beam irradiation optical systems, each of the beam irradiation optical system irradiating a charged particle beam;
a sample stage moving with the sample being placed on the sample stage;
a sample piece transferring unit including a needle being connectable to the sample piece that is separated and extracted from the sample, the sample piece transferring unit transferring the sample piece;
a holder support holding a sample piece holder having a pillar-shaped portion to which the sample piece is transferred;
a gas supply unit supplying gas for forming a deposition layer by irradiation with the charged particle beam; and
a computer configured to:
control each of the beam irradiation optical system, the sample piece transferring unit and the gas supply unit;
measure an electrical characteristic between the sample piece and the pillar-shaped portion; and
form a first deposition layer over a gap between the pillar-shaped portion and the sample piece, wherein the sample piece is positioned to have the gap with the pillar-shaped portion, until the electrical characteristic reaches a predetermined value.

US Pat. No. 10,204,759

COMPOSITE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A composite beam apparatus, comprising:an electron beam column irradiating an electron beam onto a sample;
a focused ion beam column irradiating a focused ion beam onto the sample to form a cross section; and
a neutral particle beam column having an acceleration voltage set lower than an acceleration voltage of the focused ion beam column, and irradiating a neutral particle beam onto the sample to perform finish processing of the cross section,
wherein the electron beam column, the focused ion beam column, and the neutral particle beam column are arranged such that each of the irradiated beams from the respective beam columns crosses one another at an irradiation point (P) and during cross section processing by the focused ion beam column and finish processing of the cross section by the neutral particle beam column, the electron beam column is set to irradiate and scan with the electron beam.

US Pat. No. 10,468,228

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:a charged particle beam column that irradiates a sample with a charged particle beam;
a sample stage unit that moves the sample relative to the charged particle beam column, the sample stage unit including a rotary stage section having a base portion and a rotary mover rotatable about a rotary axis relative to the base portion;
a rotary connector disposed coaxially with and rotatable about the rotary axis and fitted between the base portion and the rotary mover for electrically connecting wirings between relatively rotating elements; and
a first connection electrode disposed on the sample stage unit in electrical connection with the rotary connector.

US Pat. No. 10,446,370

CHARGED PARTICLE BEAM APPARATUS AND METHOD FOR CONTROLLING CHARGED BEAM APPARATUS

HITACHI HIGH-TECH SCIENCE...

1. A charged particle beam apparatus comprising:an irradiation unit that irradiates a sample with a charged particle beam;
an image formation section that forms an image based on a signal obtained by detecting a charged particle generated from the sample due to the irradiation with the charged particle beam;
an input reception unit that receives an observation condition;
a derivation section that derives second observation parameters proper for the observation condition based on the observation condition received by the input, reception unit and first observation parameters stored in a storage unit; and
a control unit that controls the irradiation unit based on the second observation parameters.

US Pat. No. 10,379,066

X-RAY TRANSMISSION INSPECTION APPARATUS

Hitachi High-Tech Science...

1. An X-ray transmission inspection apparatus, comprising:an X-ray source that irradiates X-rays to a sample;
a sample moving mechanism that moves the sample continuously in a predetermined direction while X-rays are irradiated from the X-ray source;
an X-ray detector that is provided opposed to the X-ray source with respect to the sample and detects the X-rays transmitted through the sample;
a standard sample moving mechanism configured to move a standard sample placed in a different position from that of the sample; and
an arrangement changing mechanism configured to be in a such a manner that the X-ray source and the X-ray detector, and the sample and the standard sample are movable relative to each other, and configured to change an arrangement state from one arrangement state in which the X-ray source and the X-ray detector face the sample to the other arrangement state in which the X-ray source and the X-ray detector face the standard sample that is moved by the standard sample moving mechanism.