US Pat. No. 10,658,151

STAGE DEVICE AND CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A stage device, comprising:a chuck that is loaded with a sample;
an XY stage that moves in X and Y directions; and
a Z stage that moves in a Z direction,
wherein the Z stage includes one or more slope mechanisms which each include:
an inclined part that is fixed to the XY stage and includes an inclined surface inclined with respect to an XY plane;
a movement part that opposes to the inclined surface of the inclined part;
a drive motor that is fixed to the XY stage and configured to move the movement part along the inclined surface; and
a guide that is provided only between the movement part and the inclined surface of the inclined part and to guide the movement part along the inclined surface, and
wherein the Z stage further includes a table that is fixed to the movement part and is provided with an upper surface which is parallel to the XY plane.

US Pat. No. 10,712,384

CIRCUIT INSPECTION METHOD AND SAMPLE INSPECTION APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A circuit inspection method comprising:bringing at least one probe into contact with a sample;
scanning the sample with a charged particle beam while power is supplied via the at least one probe to a circuit formed between a plurality of conductors of the sample by a contact of the at least one probe;
measuring a change in a resistance value of a faulty point heated locally via the at least one probe;
absorbing, by the at least one probe, a charged particle beam irradiated on the sample;
forming a charged particle beam absorption image on a basis of the absorbed charged particle beam; and
displaying the charged particle beam absorption image.

US Pat. No. 10,714,304

CHARGED PARTICLE BEAM APPARATUS

Hitachi High-Tech Corpora...

1. A charged particle beam device comprising:an optical element configured to adjust a charged particle beam emitted from a charged particle source;
an adjustment element configured to adjust the charged particle beam incident on the optical element; and
a control device configured to control the adjustment element, wherein
the control device obtains an extent of deviation from an equilibrium temperature of the optical element based on a condition setting of the optical element and executes adjustment with the adjustment element when the extent of deviation satisfies a predetermined condition.

US Pat. No. 10,711,294

NUCLEIC ACID ANALYSIS DEVICE

HITACHI HIGH-TECH CORPORA...

1. A nucleic acid analysis device comprising:a flow cell for use in analysis of nucleic acid having a substrate,
the substrate having a plurality of analysis areas partitioned on the substrate,
each of the analysis areas having a plurality of absorbent portions capable of absorbing a DNA fragment or a vector where the DNA fragment is borne,
at least one of the analysis areas having the plurality of absorbent portions and a non-absorbent portion other than the absorbent portions, and at least a part of the non-absorbent portion defines a first marker portion having a predetermined shape disposed at a center of the respective analysis area and plural second marker portions each having respective predetermined shapes and disposed at corners of the respective analysis area;
a piping connected to the flow cell to pass a fluid through a flow passage of the flow cell;
a temperature control device that controls a reactive temperature of the flow cell;
a light source that irradiates excitation light onto the at least one of the analysis areas serving as an analysis target;
a detection unit including a detector that detects fluorescence emitted from the analysis target by irradiating the excitation light thereon; and
a stage configured to support the flow cell and a driving motor configured to move the stage,
wherein, in each of the at least one of the analysis areas, straight lines obtained by linking the respective second marker portions are separated from the respective first marker portion by a same distance.

US Pat. No. 10,652,991

PLASMA PROCESSING APPARATUS AND MICROWAVE OUTPUT DEVICE

HITACHI HIGH-TECH CORPORA...

1. A plasma processing method for processing a wafer arranged in a processing chamber inside of which a plasma is generated using microwave, the plasma processing method comprising:supplying a high voltage power from a high voltage power supply to a magnetron;
generating the microwave using the magnetron;
supplying process gas into the processing chamber;
generating the plasma inside the processing chamber by using the exited process gas by the microwave propagated into the processing chamber;
wherein supplying a high voltage power further comprises:
detecting a microwave output from the magnetron;
detecting an AC component current in the high voltage power supplied to the magnetron;
comparing a first signal indicating a predetermined setting value for the high voltage power with a second signal which is obtained by adding the signal indicating the microwave output from the magnetron to the signal indicating the AC component current in the high voltage power, and
adjusting the high voltage power supplied to the magnetron using a result of the step of comparing the first and second signals.

US Pat. No. 10,712,152

OVERLAY ERROR MEASUREMENT DEVICE AND COMPUTER PROGRAM

Hitachi High-Tech Corpora...

1. A system for measuring an overlay error between a plurality of patterns belonging to different layers included in an image data, the system comprising:an imaging tool including a detector, a beam source and a lens that focuses a beam emitted by the beam source, and being configured to obtain an image for overlay error measurement;
an input device configured to designate a plurality of regions with different luminance in the image, the plurality of regions belonging to a first layer; and
a computer including a processor, the processor being configured to execute program instructions stored in a memory, the program instructions being configured to cause the processor to:
receive the image for the overlay error measurement from the imaging tool,
execute, for the received image, a border search for the plurality of regions designated by the input device, and
measure the overlay error between a pattern defined by the border search for the plurality of regions and a second layer different from the first layer.

US Pat. No. 10,739,260

OPTICAL ANALYZING DEVICE

HITACHI HIGH-TECH CORPORA...

1. An optical analyzing device comprising:a light source;
a detector;
a substrate that has a metal film on at least one surface thereof; and
one optical element that introduces a light beam to the substrate from the light source through a first portion of the one optical element, and that guides the light beam from the substrate to the detector after the light beam exits the substrate through a second portion of the one optical element,
wherein a plurality of sample regions for holding samples are disposed on the metal film,
wherein a portion of the light beam from the light source is emitted to any of the sample regions, is reflected twice or more on the metal film, is reflected at least once on a surface opposite to a side having the sample regions in the substrate, and is not emitted to other sample regions excluding the sample regions in an optical path until the portion of the light beam is guided by the optical element, and
wherein a recess is disposed on a surface of the one optical element between the first portion of the one optical element and the second portion of the one optical element.

US Pat. No. 10,690,688

AUTOMATIC ANALYZER

Hitachi High-Tech Corpora...

1. An automatic analyzer comprising:a reagent dispensing mechanism having a nozzle part configured to dispense a reagent;
a cleaning water supply configured to supply a cleaning water to the reagent dispensing mechanism, the cleaning water supply part including a water supply tank and a liquid delivery pump, the water supply tank storing cleaning water and the liquid delivery pump delivering the cleaning water stored in the water supply tank;
a heater configured to increase a temperature of the cleaning water to be supplied from the cleaning water supply to the reagent dispensing mechanism to a predetermined temperature;
a control unit configured to control the reagent dispensing mechanism, the heater, and the cleaning water supply, the control unit including an input part configured to receive analysis request information and a memory configured to store the analysis request information; and
a biochemical analyzing part including a first light source and a first detecting part, the first light source emitting light to a liquid mixture of the sample and the reagent that is stored in the first reaction container arranged in the reaction disk, and the first detecting part detecting the emitted light, wherein
the control unit is configured to determine whether dispensing operation for next analysis is continually performed or intermittent based on the analysis request information stored in the memory and control operation of the reagent dispensing mechanism and the cleaning water supply such that, if the dispensing operation for the next analysis is intermittent, in a cycle before a cycle in which the dispensing operation is started, the cleaning water stored in the water supply tank is delivered by the liquid delivery pump, the temperature of the delivered cleaning water is increased by the heater, and the cleaning water of the increased temperature is then supplied to the nozzle part of the reagent dispensing mechanism, and
if the dispensing operation for the next analysis is continually performed, the control unit controls the operation of cleaning water supply part such that the cleaning water stored in the water supply tank is delivered by the liquid delivery pump, and the delivered cleaning water is supplied to the nozzle part of the reagent dispensing mechanism without increasing the temperature of the cleaning water.

US Pat. No. 10,684,298

AUTOMATED ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automated analyzer comprising:a conveyance line that conveys a specimen rack accommodating a specimen container holding a specimen;
a dispensing line that is disposed along the conveyance line, and that is capable of causing a plurality of the specimen racks which await specimen dispensing to stand by;
a plurality of blood coagulation analysis units that are capable of analyzing blood coagulation time items whose reaction times between the specimen dispensed on the dispensing line and a reagent are different from each other depending on the specimen;
a reading unit that reads analysis request information relating to the specimen; and
a control unit that controls an operation for conveying the specimen rack, based on the read information,
wherein the control unit calculates a sum of estimated measurement times of measurement items requested for the specimen under analysis and the specimen on standby in each of the plurality of blood coagulation analysis units, and determines a conveyance destination blood coagulation anlysis unit for the specimen rack containing the specimen on standby, based on the calculated sum of the estimated measurement times.

US Pat. No. 10,684,302

SPECIMEN INSPECTION AUTOMATION SYSTEM

HITACHI HIGH-TECH CORPORA...

1. A specimen inspection automation system, comprising:a processing unit which processes a specimen;
a conveying line which conveys carriers, and includes a specimen conveying line for conveying specimen carriers and an empty carrier conveying line for conveying empty carriers;
a control device which controls the conveying of the carriers;
an external connecting module which delivers the carriers to and from an external device,
a carrier buffer module which collects and stores the empty carriers from the empty carrier conveying line and supplies the empty carriers to the empty carrier conveying line, based on information from the control device,
wherein the carrier buffer module keeps the number of empty carriers in the specimen inspection automation system within a certain range based on the number of times of convey-in and convey-out of carriers in the external connecting module.

US Pat. No. 10,768,136

ELECTROLYTE CONCENTRATION MEASUREMENT DEVICE

HITACHI HIGH-TECH CORPORA...

1. An electrolyte concentration measurement device, comprising:a measurement unit that includes an ion selective electrode, a reference electrode, and a potential measurement unit, and the measurement unit measuring, by the potential measurement unit, a potential difference when an internal standard liquid or specimen is supplied to the ion selective electrode;
a reagent supply unit that supplies a reagent containing the internal standard liquid to the measurement unit;
a record and calculation processor configured to process information of the potential difference measured by the measurement unit and obtains an ion concentration of the internal standard liquid or the specimen;
a concentration value correction/determination processor configured to determine whether the ion concentration of the internal standard liquid, which is obtained by the record and calculation unit, is within a preset value range, and corrects the ion concentration value of the internal standard liquid obtained by the record and calculation unit;
an output device configured to output a result determined by the concentration value correction/determination unit; and
a controller that controls the measurement unit, the record and calculation processor, the concentration value correction/determination processor, and the output device, wherein
the reagent supply unit includes a bottle storage unit that stores a plurality of bottles, each accommodating a reagent such as the internal standard liquid, for each type of reagent, and a bottle switching unit that detects a remaining amount of the reagent in each of the plurality of bottles stored in the bottle storage unit, switches a bottle in which the remaining amount of the reagent is smaller than a preset amount due to supplying the reagent to the measurement unit, to a bottle in which the remaining amount of the reagent is sufficiently larger than the preset amount, by a bottle that is stored in the bottle storage unit and accommodates the same type of reagent, and supplies the reagent to the measurement unit, and
the concentration value correction/determination processor corrects the ion concentration of the internal standard liquid or the specimen obtained by the record and calculation processor after the bottle accommodating the same type of reagent is switched, by using information of the ion concentration of the internal standard liquid or the specimen obtained by the record and calculation processor before the bottle is switched, when a bottle supplying a reagent to the measurement unit is switched among a plurality of bottles accommodating the same type of reagent in the reagent supply unit, and
the bottle switching unit in the reagent supply unit a remaining amount of the reagent in each of the plurality of bottles, and a flow path switching unit that switches a flow path of the reagent supplying the reagent to the measurement unit among the plurality of bottles accommodating the same type of reagent based on information of the remaining amount of the reagent in the bottle detected.

US Pat. No. 10,763,078

CHARGED PARTICLE BEAM DEVICE AND IMAGE PROCESSING METHOD IN CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:a charged particle beam source;
a charged particle beam optical system that irradiates a sample with a charged particle beam from the charged particle beam source;
a detector that outputs a signal caused by irradiation with the charged particle beam;
an image processing unit that executes integration processing of image data obtained from the signal and outputting an integration image; and
a display unit that displays the integrated image output during integration,
wherein the image processing unit executes integration computation of a luminance value and changes a coefficient of the integration based on a frame count value of the integration.

US Pat. No. 10,746,755

AUTOMATIC ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer comprising:an analysis module including a light source and a spectrometer that measures measurement values to analyze a sample;
an insertion unit into which a plurality of racks, each having an examination object container accommodating the sample mounted thereon, is inserted in an order;
a transport line that transports each of the plurality of racks from the insertion unit to the analysis module;
a memory that stores rack information indicating that certain rack identifiers of racks inserted into the insertion unit are to be analyzed according to a plurality of predetermined modes;
a detection unit that detects a rack identifier from respective racks inserted into the insertion unit; and
a controller connected to the detection unit, programmed to:
detect respective rack identifiers from each rack in the order from the insertion unit,
analyze the samples on the plurality of racks inserted into the insertion unit according to a current mode, which is one of the predetermined nodes,
upon determining a first rack of the plurality of racks in the order has a rack identifier indicating a first mode of the predetermined modes that is different than the current mode based on the rack information, switch the current mode to the first mode of the first rack and automatically analyze the first rack and one or more second racks subsequent to the first rack in the order according to the current mode, which is the first mode of the first rack, and
upon determining a third rack of the plurality of racks in the order subsequent to the one or more second racks has a rack identifier indicating a second mode of the predetermined modes that is different than the current mode based on the rack information, switch the current mode to the second mode of the third rack and automatically analyze the third rack and one or more fourth racks subsequent to the third rack in the order according to the current mode, which is the second mode of the third rack.

US Pat. No. 10,684,256

ANALYSIS DEVICE PROVIDED WITH ION MOBILITY SEPARATION PART

Hitachi High-Tech Corpora...

1. An analyzer, comprising:an ion source;
an ion mobility separation part which includes a pair of facing electrodes to which a high frequency voltage and a DC voltage are applied; and
a shielding electrode which is provided between the ion source and the ion mobility separation part and to which a DC voltage is applied, wherein
the shielding electrode includes anion flow path connecting an inlet from which ions from the ion source are introduced and an outlet from which the ions are discharged thereinside, and
the ion flow path is bent so that the outlet is unable to be seen from the inlet.

US Pat. No. 10,670,618

AUTOMATED ANALYSIS DEVICE, AND LID OPENING/CLOSING MECHANISM

HITACHI HIGH-TECH CORPORA...

1. An automated analysis device comprising:a container transport device on which a plurality of reagent containers for accommodation of reagents used for analysis of a sample can be mounted; and
a lid opening/closing mechanism that can simultaneously open or close a plurality of specific reagent containers located at a dispensing/stirring position among the plurality of reagent containers,
wherein the lid opening/closing mechanism includes
a unit base that is fixed to the container transport device,
a hook base part that is rotatably linked to the unit base,
a lid opening/closing drive device that moves the hook base part in parallel in an opening/closing direction of lids of the plurality of specific reagent containers with respect to the unit base,
a plurality of hooks that are rotatably linked to the hook base part, and respectively engage with the lids of the plurality of specific reagent containers, and
a plurality of hook drive devices which can individually rotationally move the plurality of hooks with respect to the hook base part, and
wherein each of the plurality of hooks includes
a claw portion that, when each claw portion is oriented to engage with a lid, causes a force to act on the lid in the opening direction,
a basal part that, when each basal part is oriented to engage with the lid, causes a force to act on the lid in the closing direction, and
a closing protrusion that, when each basal part is oriented not to engage with the lid, engages an open lid and causes a force to act on the open lid to move that open lid in the closing direction.

US Pat. No. 10,872,745

CHARGED-PARTICLE BEAM SYSTEM

HITACHI HIGH-TECH CORPORA...

1. A charged-particle beam system, comprising:a charged-particle beam device that includes a detection unit that detects electrons generated by irradiating a sample with a charged-particle beam released from a charged particle source; and
a signal detection unit in which a detection signal from the detection unit is input through a wiring, wherein the signal detection unit includes
a separation unit configured to separate the detection signal from the detection unit into a rising signal and a falling signal,
a falling signal processing unit configured to eliminate ringing in the falling signal, and
a combination unit configured to generate and output a combined signal produced by combining the rising signal, which has been separated by the separation unit, with the falling signal wherefrom the ringing has been eliminated by the falling signal processing unit.

US Pat. No. 10,872,411

DIAGNOSTIC IMAGING ASSISTANCE APPARATUS AND SYSTEM, AND DIAGNOSTIC IMAGING ASSISTANCE METHOD

HITACHI HIGH-TECH CORPORA...

1. A diagnostic imaging assistance apparatus comprising:an input unit configured to receive wide view image data and narrow view image data in a same image as image data obtained by capturing a slice of a tissue or a cell of a diagnostic object;
a feature extraction unit configured to process the image data input to the input unit to extract a feature amount on an image of the tissue from the wide view image data and extract a feature amount on an image of the cell from the narrow view image data;
a single view determination unit configured to classify whether the tissue is normal or abnormal from the feature amount of the wide view image data extracted by the feature extraction unit, and classify whether the cell is normal or abnormal from the feature amount of the narrow view image data;
a multiple view determination unit configured to classify a lesion likelihood of the diagnostic object from a classification result of the wide view image data and a classification result of the narrow view image data classified by the single view determination unit;
a drawing unit configured to actualize a region containing the tissue or the cell classified as abnormal by the multiple view determination unit on the image data; and
a recording unit configured to store an image of which the region containing the tissue or the cell classified as abnormal is actualized by the drawing unit.

US Pat. No. 10,794,874

SAMPLE INJECTION DEVICE

HITACHI HIGH-TECH CORPORA...

1. A sample injection method for injecting a sample into a mass analyzer, using a sample loop, a container that contains a flowing solvent, a drawing section having a drawing pump, a flow path switching section that switches between (i) a first flow path joining the flowing solvent and the sample loop and a third flow path joining the sample loop and the mass analyzer and (ii) a second flow path joining the drawing section and the sample loop, and a liquid passing section having a passing pump coupled to the flow path switching section, the method comprising:switching the flow path switching section to the second flow path, to connect the drawing section including the drawing pump to the sample loop, to disconnect the passing pump from the sample loop, and to disconnect the sample loop from the mass analyzer;
drawing the sample, using the drawing section with the drawing pump, into the sample loop with air layers disposed on both sides of the sample, by drawing an air layer on one side of the sample to be drawn, moving a tip of the drawing pump into a sample solution to draw the sample, and lifting the tip of the drawing pump out of the sample to draw another air layer on another side of the drawn sample;
switching the flow path switching section to the first flow path to connect the passing pump to the sample loop and the third flow path to connect the sample loop and the mass analyzer, and to disconnect the drawing section including the drawing pump from the sample loop;
passing the flowing solvent from the container, using the liquid passing section with the passing pump, to the sample loop via the first flow path so as to inject the sample from the sample loop via the third flow path into the mass analyzer with the air layers disposed on both sides of the sample;
producing a signal having signal intensity with the mass analyzer for the injected sample with the air layers disposed on both sides of the sample;
detecting an increase from zero and a decrease to zero of the signal intensity produced by the mass analyzer that respectively corresponds to presence of the air layers disposed on both sides of the sample with respect to the liquid of the sample to determine a start and an end of data collection of the signal produced by the mass analyzer; and
analyzing the signal produced by the mass analyzer for mass analysis of the sample disposed between the air layers.

US Pat. No. 10,761,105

AUTOMATIC ANALYZING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzing apparatus including a transport line configured to transport a sample container mounted in a rack, and a probe that suctions a sample from the sample container at a suction position and discharges the sample into a reaction vessel, the probe pierces a sealing plug that seals the sample container, the automatic analyzing apparatus comprising: a member fixed at a predetermined level which presses down the sample container sealed with the sealing plug that is floated from the rack due to friction between the probe and the sealing plug upon the probe pulling out from the sample container sealed with the sealing plug; a mechanism that pushes down the sample container sealed with the sealing plug toward the rack upon transportation of the sample container on the transport line; and wherein the mechanism includes a contact portion that comes in contact with the floated sealing plug, and wherein the transport line transports the rack and the contact portion pushes down the floated sample container without stopping transportation of the rack.

US Pat. No. 10,763,088

VACUUM PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A vacuum processing apparatus comprising:a processing chamber which is disposed inside a vacuum vessel, and whose inner portion is exhausted and depressurized;
a specimen stage which is disposed in the processing chamber where a specimen to be processed is placed on an upper surface of the specimen stage; and
an opening which is disposed below the specimen stage, and communicates with an exhaust pump for exhausting the inner portion of the processing chamber,
wherein the specimen is processed using plasma formed above the specimen stage and in the processing chamber, and
the specimen stage includes: a base member that includes a dielectric film, where the specimen is placed on an upper surface of the dielectric film, and the base member is made of metal; a base plate that is disposed below the base member, is interposed and insulated between the base member and an insulating member, and is made of metal; a connector that is inserted into a center of the base member from below the base plate, is mounted on a lower surface of the base plate, and supplies high-frequency power to the base member; a cylindrical pedestal which is disposed below the base plate, whose internal space is under an atmospheric pressure, and which is connected to the base plate in a state in which the base plate, and the base member and the insulating member fastened to the base plate are placed on an upper side of the internal space; a plate-shaped beam part which is disposed in the internal space of the cylindrical pedestal with a gap from the lower surface of the base plate, and extends outward from the center of the internal space in a T or Y shape, and whose end is connected to an inner circumferential wall surface of the cylindrical pedestal; a plurality of pins that pass through the beam part, the base plate, the insulating member, and the base member, support the specimen on tips thereof on an upper side of the specimen stage, and vertically move the specimen; a drive unit of the plurality of pins that is mounted on a lower surface of the center of the beam part; and a seal that is disposed at the beam part, is disposed around a through-hole through which each of the plurality of pins passes, and forms an airtight seal between a periphery of each of the pins and the internal space in the cylindrical pedestal under the atmospheric pressure.

US Pat. No. 10,753,870

AUTOMATIC ANALYSIS APPARATUS INCLUDING A REACTION CONTAINER HOLDING PART HAVING A SURFACE THAT REFLECTS LIGHT EMITTED FROM A LIGHT SOURCE

Hitachi High-Tech Corpora...

1. An automatic analysis apparatus comprising:an analysis port including a reaction container holding part that holds a reaction container storing a liquid mixture of a sample and a reagent, a light source that emits light to the liquid mixture stored in the reaction container held by the reaction container holding part, and a detector that detects light generated when the light is emitted from the light source to the liquid mixture as generated light; and
a control unit that controls the analysis port, wherein
the sample is analyzed based on information on the detected generated light,
a surface of the reaction container holding part is configured to reflect at least a part of the light emitted from the light source, and
the control unit executes control so as to emit the light from the light source in a state where the reaction container is not held by the reaction container holding part, to detect the light reflected on the surface of the reaction container holding part by the detector as reflected light, and not to use the analysis port for analysis when a result of a detection of the reflected light shows that the detected reflected light is less than a first value determined in advance.

US Pat. No. 10,707,046

ELECTRON SOURCE AND ELECTRON BEAM DEVICE USING THE SAME

Hitachi High-Tech Corpora...

1. An electron source comprising:a filament made of a metal;
a metal tube that is fixed to the filament and has a plurality of recesses disposed at least in two axial directions so as to surround a central axis at an outer periphery; and
a columnar hexaboride tip that emits an electron, is disposed so as to protrude from the inside of the metal tube to a side opposite to the filament, and is in contact with a bottom of each of the plurality of recesses of the metal tube.

US Pat. No. 10,707,047

MEASURING DEVICE AND MEASURING METHOD

HITACHI HIGH-TECH CORPORA...

1. A measuring device for measuring a sample by emitting a charged particle beam, the measuring device comprising:a particle source configured to emit the charged particle beam;
an electronic lens configured to focus the charged particle beam;
a detector configured to detect a signal generated from the sample irradiated with the charged particle beam;
a stage capable of moving with the sample mounted thereon;
an electrostatic chuck attached to the stage that fixes the sample, the stage and the electrostatic chuck being made of different materials;
a sensor configured to measure environment of the measuring device; and
a control device configured to control the measuring device overall, the control device comprising a processor that executes:
a height calculation process configured to calculate a height estimation value indicating an estimated height of the sample at a measurement position; and
a correction value calculation process configured to calculate a correction value reflecting a change of the environment based on the measurement position of the sample and an amount of change of the environment measured by the sensor;
a height correction process to correct the height estimation value based on the correction value; and
a setting process to set a control value for controlling focus adjustment using the electronic lens based on the corrected height estimation value, wherein
the control device retains parameter information representing a distribution of distortions caused by a stress of a connecting portion of the stage and the electrostatic chuck due to a difference in materials thereof for calculating the correction value, and
the correction value calculation process calculates the correction value of the measurement position of the sample based on the measurement position of the sample, the amount of environmental change measured by the sensor, and the parameter information.

US Pat. No. 10,690,690

AUTOMATIC ANALYSER AND METHOD

HITACHI HIGH-TECH CORPORA...

1. An automatic analyser comprising:a specimen dispensing mechanism that includes a specimen nozzle, a first pump and a first valve;
a nozzle connected to a first channel that is connected to a second pump and a second valve, the nozzle configured to eject liquid onto the specimen nozzle and into a cleaning tank;
a second channel connected to a third valve and the second pump; and
a controller connected to the specimen dispensing mechanism, the pump, the first valve, the second valve and the third valve, the controller programmed to:
perform a specimen suctioning process of controlling the specimen dispensing mechanism to insert the specimen nozzle into a specimen chamber holding a specimen and driving the first pump to suction the specimen in the specimen chamber,
perform a cleaning water introducing process of controlling the specimen dispensing mechanism to move the specimen nozzle to the cleaning tank after the specimen suctioning process and controlling the second valve to eject the liquid through the nozzle connected to the first channel onto the specimen nozzle,
perform a first liquid suctioning process of controlling the specimen dispensing mechanism to move the specimen nozzle to the second channel after the cleaning water introducing process and driving the first pump to suction a first volume of liquid,
perform an air suctioning process of driving the first pump to suction air after the liquid suctioning process, and
perform an ejection process of driving the first pump to eject the air before the liquid, and eject the liquid before a portion of the specimen is ejected from the specimen nozzle to a reaction chamber.

US Pat. No. 10,692,600

AUTOMATIC ANALYZER, REMOTE MAINTENANCE SYSTEM, AND MAINTENANCE METHOD

HITACHI HIGH-TECH CORPORA...

1. A remote maintenance system comprising: an automatic analyzer including: a display that displays an alarm screen; a computer programmed to generate alarm generation information that indicates an alarm due to an abnormality and alarm deletion information indicating that a customer has deleted an alarm displayed on the alarm screen based on the alarm generation information; and an information sharing portion that shares the alarm generation information generated by the computer and the alarm deletion information with an external alarm maintenance system, wherein the external alarm maintenance system comprises an alarm monitoring terminal that includes a display and that receives the alarm generation information and the alarm deletion information, wherein the alarm monitoring terminal displays alarm information on the display based on the received alarm generation information and updates and displays the alarm information based on the received alarm deletion information, wherein the alarm generation information includes an alarm generation time indicating a time of generation of the alarm, wherein the alarm monitoring terminal stores a first threshold time, wherein upon the computer determining the time from the alarm generation time exceeds the first threshold time, display a notice indicating a need for customer support on the display, and wherein upon the computer receiving the alarm deletion information before the first threshold time elapses, the alarm monitoring terminal does not display the notice on the display even when the first threshold time elapses.

US Pat. No. 10,672,119

INSPECTION DEVICE

HITACHI HIGH-TECH CORPORA...

1. An inspection device comprising:an image analysis apparatus that analyzes a top-down image signal of a sample which is output from a charged particle beam apparatus and has a plurality of columnar patterns or hole-shaped patterns formed at a regular interval, wherein the image analysis apparatus is configured to perform an edge calculation for an outline of an image obtained from the top-down image signal as a set of discrete points representing a position of an edge,
wherein the image analysis apparatus is further configured to perform
an approximation calculation that approximates the set of discrete points of the edge using an ellipse or a circle,
a distance calculation that calculates a distance between the approximated ellipse or the circle and each point of the edge,
an angle calculation that calculates a major axis, a minor axis, an eccentricity, and an angle formed by a major axis direction with an image horizontal axis direction of the approximated ellipse as a first index group, and
a Cr calculation that calculates a circumferential length of an outline of a columnar pattern or hole-shaped pattern on the sample and a value obtained by dividing a square of the circumferential length by a value obtained by multiplying an area surrounded by the outline of the columnar pattern and 4? as one of a second index group.

US Pat. No. 10,672,595

PLASMA PROCESSING APPARATUS AND OPERATION METHOD THEREOF

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus for processing a wafer disposed in a processing chamber disposed in a vacuum chamber using plasma generated in the processing chamber, the plasma processing apparatus comprising:a first window disposed on a side wall on one side of the vacuum chamber surrounding the processing chamber and through which light emitted from the plasma passes;
a light source of external light disposed outside of the first window;
an optical absorbing unit disposed outside of the processing chamber opposite to the first window in which external light emitted from the light source passing through the processing chamber is received and absorbed;
an optical branching unit disposed between the light source and the first window, and having a plurality of optical ports including a first optical port for a first optical path of light, a second optical port for a second optical path of light, and a third optical port of a third optical path of light, the first optical path of light and the second optical path of light being branched from light emitted by the light source, the first optical path of light being directed in a first direction toward the processing chamber and the second optical path of light being directed in a second direction different from said first direction, and the third optical path of light being branched from light from the first window into a third direction different from each of said first and second directions; and
a detection unit configured to selectively transmit each of said first, second and third optical paths of light branching from the optical branching unit including the first optical path of light from the first optical port having passed through the processing chamber and been received by the optical absorbing unit, and the second optical path of light from the second optical port branched in the second direction and the third optical path of light from the third optical port branched in the third direction, and the detection unit being configured to detect the light emitted from the plasma and received by the optical absorbing unit by using the first, second and third optical paths of light branching from the optical branching unit,
the apparatus further comprising a controller configured to adjust a condition for said processing based on a detection result of the detection unit.

US Pat. No. 10,908,083

MULTICOLOR FLUORESCENCE ANALYSIS DEVICE

Hitachi High-Tech Corpora...

1. A multicolor fluorescence analysis device detecting fluorescent light which is emitted from a plurality of types of fluorescent pigments contained in a sample and having different fluorescence wavelengths by being irradiated with excitation light, the device comprising:an irradiation unit which sequentially irradiates the sample with a plurality of excitation lights, the excitation lights having different excitation wavelength bands;
a first fiber optic plate which is in contact with at least a part of the sample, receives light including the fluorescent light emitted from the sample via a first incident portion and guides the light, and allows the light to exit from a first exiting portion on a side opposite to the first incident portion;
a second fiber optic plate which receives the light exiting from the first exiting portion via a second incident portion and guides the light, and allows the light to exit from a second exiting portion on a side opposite to the second incident portion;
a single dielectric multilayer film interference filter which is disposed on an end surface of the second exiting portion, and transmits at least a part of the fluorescent light and transmits light having a plurality of transmission wavelength bands not including the plurality of excitation wavelength bands; and
a two-dimensional detection unit which is disposed to be attached to the dielectric multilayer film interference filter and disposed downstream of the first and second fiber optic plates, and detects light transmitted through the dielectric multilayer film interference filter;
wherein the dielectric multilayer film interference filter is a first dielectric multilayer film interference filter having a first transmittance (?1) for a first transmission wavelength band that is less than a predetermined value (?), and the irradiation unit includes a light source and a second dielectric multilayer film interference filter, having a second transmittance (?2) for a second transmission wavelength band that is less than the predetermined value (?), which selectively transmits the excitation lights;
wherein a first transmission wavelength at a lower end of the first transmission wavelength band and a second transmission wavelength at an upper end of the second transmission wavelength band satisfy a relationship ?2??1(1?(sin ?max/neff)2)1/2, such that the first transmission wavelength band and the second transmission wavelength band do not overlap,
wherein ?2 is the second transmission wavelength, ?1 is the first transmission wavelength, ?max is a maximum incident angle of light incident on the first dielectric multilayer film interference filter, and neff is an effective refractive index of the first dielectric multilayer film interference filter.

US Pat. No. 10,872,742

CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device which includes a sample stage provided with a measurement sample and an electric field-correcting electrode which corrects an electric field in a vicinity of an outer peripheral portion of the measurement sample, and in which the measurement sample is measured by irradiating the measurement sample with a charged particle beam, the device comprising:a memory;
an input/output device; and
a processor communicatively coupled to the memory and the input/output device, wherein the processor is configured to:
performs control such that when a dummy sample is provided in the sample stage or both the measurement sample and the dummy sample are not provided in the sample stage, a first voltage is applied to the electric field-correcting electrode and/or a second voltage is applied to a neighboring electrode arranged near the electric field-correcting electrode to remove a foreign matter adhering to the electric field-correcting electrode, and
control a power source connected to the electric field-correcting electrode and/or a power source connected to the neighboring electrode such that in the voltage to be applied to the electric field-correcting electrode, the first voltage and/or the second voltage have periodicity, or an absolute value of the first voltage and/or an absolute value of the second voltage is equal to or more than an absolute value of the voltage applied when the measurement sample is measured.

US Pat. No. 10,872,766

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND A PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A manufacturing method of a semiconductor device comprising:a first step for performing plasma processing on a semiconductor substrate including at least a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and
a second step for performing plasma processing on the semiconductor substrate to segregate silicon on the surface of the exposed silicon germanium layer under a second condition,
wherein the first condition is a condition under which the silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched,
the second condition is a condition under which hydrogen plasma processing is performed, and
the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

US Pat. No. 10,796,884

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber for plasma processing of a sample;
a dielectric window for air-tightly sealing the processing chamber;
two induction antennas provided outside the dielectric window for generating an induced magnetic field;
two radio frequency power sources for supplying radio frequency power to the induction antennas; and
a controller configured to periodically change a phase difference of a radio frequency current flowing to the induction antennas over time,
wherein a first of the two induction antennas comprises a first plurality of U-shaped elements which receives radio frequency power from a first radio frequency power source, a first of said first plurality of U-shaped elements comprising first and second element portions extending in a first direction and connected at respective first ends to a third element portion which extends in a second direction orthogonal to said first direction, and a second of said first plurality of U-shaped elements comprising first and second element portions extending in said second direction and connected at respective first ends to a third element portion which extends in the first direction,
wherein a second of the two induction antennas comprises a second plurality of U shaped elements which receives radio frequency power from a second radio frequency power source, a first of said second plurality of U-shaped elements comprising first and second element portions extending in the second direction and connected at respective first ends to a third element portion which extends in the first direction, and a second of said first plurality of U-shaped elements comprising first and second element portions extending in said first direction and connected at respective first ends to a third element portion which extends in the second direction,
wherein the first plurality of induction antennas is arranged to have a first fold of a predetermined length in the first direction, and a second fold of a predetermined length in the second direction, and the second plurality of induction antennas is arranged to have a first fold of a predetermined length in the second direction, and a second fold of a predetermined length in the first direction, the two induction antennas being arranged such that the first and second pluralities of induction antennas cross with each other at right angles, and are adjacent and parallel to each other,
wherein a second end of said second element of said first plurality of U-shaped elements, and a second end of said second element of said second plurality of U-shaped elements, are connected only via an intermediate wiring connection, and
wherein all elements of said first induction antenna are connected only in series, and all elements of said second induction antenna are connected only in series.

US Pat. No. 10,793,821

TEST DEVICE

HITACHI HIGH-TECH CORPORA...

1. An testing instrument which performs an identification testing or an antimicrobial susceptibility testing of bacteria or fungi, the testing instrument comprising:a microplate having a plurality of wells, wherein the microplate holds in wells germs in a culture fluid containing antimicrobial agents and the bacteria or fungi;
an optical system that includes:
a light source,
a dichroic mirror that reflects light from the light source onto the microplate via an objective lens,
a filter located between the light source and the dichroic mirror, wherein the filter selectively permits all wavelengths of light from the light source to pass to the dichroic mirror when microscopic observations are performed and permits only light from the light source having a first wavelength to pass to the dichroic mirror when measurements of turbidity are performed,
a first photodiode that receives the light reflected by the dichroic mirror that has passed through the microplate,
a second photodiode that receives light that passes through the dichroic mirror without being reflected to the microplate, and
a CCD element that forms a microscopic image from light scattered by microplate via the objective lens;
a processor communicatively coupled to the optical system, wherein the processor is configured to:
obtain the microscopic image, by controlling the filter to permit all wavelengths of light from the light source to pass to the dichroic mirror and subsequently receiving the microscopic image from the CCD element,
calculate turbidity of the culture fluid held in each well of the microplate,
perform predetermined image processing on the microscopic image to form image data,
calculate an image processing result based on the image data,
generate influence determination information based the image processing result and the turbidity of the culture fluid held in each well of the microplate calculated, wherein the influence determination information indicates an influence of a target antimicrobial agent to the bacteria or fungi with respect to plural types of antimicrobial agents at one or more concentrations, and
display the influence determination information in a time series on a display screen, and
wherein the turbidity of the culture fluid held in each well of the microplate are calculated by:
controlling the filter to only pass the light from the light source having the first wavelength and
comparing an amount of light received by the first photodiode and the second photodiode.

US Pat. No. 10,783,625

METHOD FOR MEASURING OVERLAY AND MEASURING APPARATUS, SCANNING ELECTRON MICROSCOPE, AND GUI

HITACHI HIGH-TECH CORPORA...

1. A method for measuring overlay at a semiconductor device on which circuit patterns are formed by a plurality of exposure processes,wherein the plurality of exposure processes includes a first exposure process which includes at least one exposure process, and a second exposure process which is different from the first exposure process and which includes at least one exposure process,
the method comprising:
an image capturing step for capturing a plurality of images of areas in the semiconductor device;
a reference image setting step for setting a reference image on the basis of the captured plurality of images;
for a selected image among the captured plurality of images, a difference quantifying step for quantifying a difference between the reference image and the selected image; and
an overlay calculating step for calculating the overlay on the basis of the difference between the reference image and the selected image,
wherein said quantifying the difference between the reference image and the selected image further comprises quantifying a first positional deviation amount corresponding to the first exposure process and a second positional deviation amount corresponding to the second exposure process, based on gray values of the reference image ad gray values of the selected image.

US Pat. No. 10,763,074

CHARGED PARTICLE BEAM APPARATUS, OBSERVATION METHOD USING CHARGED PARTICLE BEAM APPARATUS, AND PROGRAM

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam apparatus comprising:an optical system that irradiates a sample mounted on a sample stage with a charged particle beam;
an imaging device that acquires an image by irradiating the sample with the charged particle beam; and
a controller that controls at least one of a stage that moves the sample stage and a deflector that changes an irradiation position of the charged particle beam to change an area of the image to be captured so as to output the image acquired by the imaging device to a display unit,
wherein the controller outputs:
a first image acquired by the imaging device at a first magnification to a first region of the display unit;
a second image acquired in a past by the imaging device at a second magnification lower than the first magnification to a second region of the display unit; and
the first image at higher resolution than that of the second image by superimposing it on the second image based on the irradiation position, when the first image output to the first region is additionally output to the second region,
wherein the controller displays the first image and the second image, in superimposition with a sample holder figure.

US Pat. No. 10,753,953

AUTOMATED ANALYZER AND LIQUID RESERVOIR

HITACHI HIGH-TECH CORPORA...

1. An apparatus for storing liquid in an automated analyzer, the apparatus comprising:a liquid reservoir installed in the automated analyzer to store liquid used for analysis, provided at an upper end with an opening for accepting the liquid, and provided on an upper end side of a side surface with an overflow portion to overflow the liquid outwardly; and
an inner pipe surrounded by an outer wall to form a discharge flow path between an outer wall surface of the inner pipe and the outer wall for discharging the liquid allowed to overflow from the overflow portion of the liquid reservoir;
wherein the inner pipe and the outer wall are disposed outside of the liquid reservoir and outside of the overflow portion of the liquid reservoir,
wherein the overflow portion comprises a flow path inlet disposed on the upper end side of the side surface of the reservoir, a flow path bottom surface monotonously inclined obliquely downward from the flow path inlet, and a flow path side wall disposed on a lateral side of the flow path bottom surface and shaped to have an opening on a flow path outlet side, and
a flow path outlet of the overflow portion projects through the outer wall at a location below an upper end of the outer wall, into the discharge flow path inwardly toward the outer wall surface of the inner pipe, so as to be located closer to an inner circumferential side of the discharge flow path than to an inner circumferential side of the outer wall of the discharge flow path and below an upper end of the outer wall of the discharge flow path.

US Pat. No. 10,753,922

BIOMOLECULE MEASUREMENT APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A biomolecule measuring device comprising:a first liquid tank filled with an electrolyte solution;
a second liquid tank filled with the electrolytic solution;
a nanopore device that supports a thin film having a nanopore and is provided between the first liquid tank and the second liquid tank to communicate the first liquid tank with the second liquid tank through the nanopore;
an immobilizing member that is disposed in the first liquid tank, has a size larger than that of the thin film and to which biomolecules are immobilized;
a driving mechanism that drives the immobilizing member in a direction closer to or away from the thin film;
a first electrode that is provided in the first liquid tank;
a second electrode that is provided in the second liquid tank;
a stop mechanism that prevents a contact between the immobilizing member and the thin film;
a power supply that applies a voltage between the first electrode and the second electrode; and
a measurement unit that measures an ionic current flowing between the first electrode and the second electrode,
wherein at least one of the nanopore device and the immobilizing member has a groove structure in a region where the nanopore device and the immobilizing member are opposed to each other, and
wherein the measurement unit acquires sequence information on the biomolecules by an ionic current measured when the biomolecules immobilized on the immobilizing member pass through the nanopore, and
wherein the groove structure is continuously formed in a range where the nanopore device and the immobilizing member are opposed to each other.

US Pat. No. 10,741,368

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber which is formed using a vacuum container;
a sample stage which is installed inside the processing chamber and on which an object to be processed is placed;
a vacuum exhaust unit which includes a vacuum pump and exhausts an inside of the processing chamber to vacuum; and
a plasma generation unit which includes a power supply and generates plasma inside the processing chamber,
wherein the sample stage includes:
a first metallic base material which has a flow path of a refrigerant formed therein;
a second metallic base material which is disposed above the first metallic base material and has a lower thermal conductivity than the first metallic base material;
an insulating film layer which is formed using an insulating member covering a surface of the second metallic base material, has an electrode formed therein, and adsorbs the object to be processed, placed on an upper surface of the insulating film layer, by an electrostatic force; and
a plurality of lift pins which vertically moves the object to be processed with respect to the upper surface of the insulating film layer in a state where the adsorption by the electrostatic force is stopped,
a plurality of through-holes through which the plurality of the lift pins passes is formed in the first metallic base material, the second metallic base material, and the insulating film layer, and a boss, which electrically insulates the lift pin from the first metallic base material and the second metallic base material and is formed using an insulating member having a higher thermal conductivity than the second metallic base material, is inserted into each of the plurality of through-holes.

US Pat. No. 10,702,199

BLOOD COLLECTING DEVICE

HITACHI HIGH-TECH CORPORA...

1. A blood collecting device comprising:a container unit that has an opening portion and a closing portion, and that holds the opening portion in a state where the opening portion faces upward;
a fixing unit that fixes a blood collecting target in a state where the blood collecting target faces the opening portion;
a pressure changing unit that pressurizes the blood collecting target or applies negative pressure into a space surrounded by the blood collecting target and the container, or that performs both of these in combination with each other;
a puncture unit that is positioned below the container unit, and that punctures the blood collecting target after pressure is changed by the pressure changing unit; and
a lid that closes the opening portion of the container containing blood,
wherein the container unit has a slide mechanism which slides with respect to the fixing unit in a horizontal direction.

US Pat. No. 10,699,884

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber in which a sample is subject to plasma processing;
a radio frequency power source that supplies radio frequency power for generating plasma;
a sample stage that includes a first region and a second region which are electrically divided from each other and on which the sample is placed, the first region comprising a center electrode and the second region comprising a ring-shaped outer electrode disposed at an outer peripheral side of said center electrode;
a first radio frequency power source that supplies first radio frequency power to the first region;
a second radio frequency power source that supplies second radio frequency power to the second region;
a control device that controls a phase difference which is a difference between a phase of the first radio frequency power and a phase of the second radio frequency power; and
an inter-electrode circuit portion that is disposed between a first transmission path for supplying the first radio frequency power to the first region and a second transmission path for supplying the second radio frequency power to the second region,
wherein one connection portion of the inter-electrode circuit portion is connected between the sample stage and a matching unit of the first radio frequency power source,
the other connection portion of the inter-electrode circuit portion is connected between the sample stage and a matching unit of the second radio frequency power source, and
the control device controls the phase difference so that a voltage difference, which is a difference between a peak-to-peak voltage of a radio frequency voltage applied to the first region and a peak-to-peak voltage of a radio frequency voltage applied to the second region has a peak-to-peak voltage adjustment range that is greater than a peak-to-peak voltage adjustment range in an absence of the phase difference.

US Pat. No. 10,684,276

COMPONENTIAL ANALYZER, DRUG EFFICACY ANALYZER, AND ANALYSIS METHOD

Hitachi High-Tech Corpora...

1. A method of componential analysis, comprising:a temperature controlling step of controlling a first temperature in a first container and a third container containing a cell and a second temperature in a second container containing the cell so that the second temperature is lower than the first temperature;
a measuring step of measuring:
an amount of a component excreted from the cell in the first container to a first buffer solution in the first container,
an amount of the component excreted from the cell in the second container to the first buffer solution in the second container, and
an amount of the component excreted from the cell in the third container to a second buffer solution comprising a reagent for removing cell-cell adhesion of the cell in the third container; and
an analyzing step of analyzing, based on a result measured in the measuring step, each of:
an amount of the component excreted via a transporter in the cell,
an amount of the component excreted via a gap formed in a cell-cell adhesion part of the cell, and
an amount of the component excreted via a route other than the transporter and the gap formed in the cell-cell adhesion part of the cell.

US Pat. No. 10,955,431

AUTOMATIC ANALYSIS DEVICE WITH SYRINGE PUMP

HITACHI HIGH-TECH CORPORA...

1. An automatic analysis device, comprising:a dispensing unit configured to aspirate and dispense a liquid; and
a syringe pump configured to feed and aspirate a liquid into and from the dispensing unit,
wherein the syringe pump includes:
a syringe tube capable of storing a liquid;
a plunger capable of moving up and down in a longitudinal direction of the syringe tube;
a plunger upper pressing component in contact with the plunger;
a power transmission unit configured to transmit power to the plunger via the plunger upper pressing component; and
a plunger lower pressing component in contact with the power transmission unit,
wherein the plunger upper pressing component and the power transmission unit are in direct contact,
wherein the power transmission unit and the plunger lower pressing component are in direct contact with each other and the direct contact is fixed,
wherein the power transmission unit is disposed between the plunger upper pressing component and the plunger lower pressing component in an axial direction of the plunger.

US Pat. No. 10,955,361

DEFECT INSPECTION APPARATUS AND PATTERN CHIP

HITACHI HIGH-TECH CORPORA...

1. A defect inspection apparatus comprising:a stage that moves with a sample and a patterned substrate to be inspected placed thereon;
an illumination optical system that emits illumination light being incident on an object on the stage from a direction inclined relative to a normal direction with respect to the patterned substrate and extending in a first direction on the patterned substrate;
a first detection optical system that forms an image on a first detector and detects scattered light generated in the normal direction by irradiation of the illumination light;
a second detection optical system that forms an image on a second detector and detects scattered light emitted in a direction different from a direction of the scattered light detected by the first detection optical system among the scattered light;
a signal processing unit that processes a scattered light signal detected by the first detection optical system and the second detection optical system; and
a control unit, wherein
the control unit implements
first adjustment processing of adjusting a focal position of the first detection optical system or the second detection optical system and a three-dimensional position of each detector with respect to an illumination region of the illumination light by using the scattered light signal obtained in each of the first detection optical system and the second detection optical system, and
second adjustment processing of adjusting a focal point by changing a position in an optical axis direction of a detector of the first detection optical system or the second detection optical system and a position in a height direction of the stage by using the scattered light signal, and
the control unit implements the second adjustment processing at a higher frequency than the first adjustment processing.

US Pat. No. 10,948,347

FAR-INFRARED SPECTROSCOPY DEVICE

Hitachi High-Tech Corpora...

1. A far-infrared spectroscopy device, comprising:an illumination optical system; and
a stage on which a sample is mounted and that is movable in at least one direction, wherein
the illumination optical system is an anamorphic optical system, and
when a wavelength of a first far-infrared light from a variable wavelength far-infrared light source is changed, the stage is moved in accordance with a change in an irradiation position of far-infrared light that is likely to occur on the sample surface, and the first far-infrared light is emitted to the same position of the sample.

US Pat. No. 10,921,337

AUTOMATIC ANALYZING DEVICE

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzing device comprising:a reagent holder that movably holds a plurality of reagent containers;
a reagent refrigerator that covers a periphery of the reagent holder;
a reagent loader configured to pass through an opening disposed in part of the reagent refrigerator;
a detector configured to detect a predetermined component in a sample to analyze the sample;
a user input device to control movement of the reagent loader; and
a controller programmed to:
control the detector;
upon detecting an instruction from the user input device, determine whether the automatic analyzer is in a standby state in which analysis of the sample has not been started and can be started in response to an analysis instruction for the sample or in an analyzing state in which the analysis of the sample has been started;
upon determining the automatic analyzer is in the standby state, control the reagent holder and the reagent loader so as to execute a carry-in operation according to a first reagent carry-in/out mode,
upon determining the automatic analyzer is in the analyzing state, control the reagent holder and the reagent loader so as to execute the carry-in operation according to a second reagent carry in/out mode which is different than the first reagent carry-in/out mode,
upon determining the automatic analyzer is in the standby state:
upon detecting the user input device being pressed for less than a predetermined time, execute the carry-in operation of a respective reagent container by lowering the reagent loader through the opening and thereafter lift the reagent loader through the opening for receiving a next carry-in operation; and
upon detecting the user input device being pressed for greater than the predetermined time, complete the carry-in operation of the respective reagent container by lowering the reagent loader through the opening without thereafter lifting the reagent loader through the opening for receiving a next carry-in operation, and start to perform a reagent preparing operation on a reagent in the respective reagent container; and
upon determining the automatic analyzer is in the analyzing state:
upon detecting the user input device being pressed for less than the predetermined time, execute the carry-in operation of the respective reagent container by lowering the reagent loader through the opening, perform the analyzing operation with priority and wait until the analysis of the sample is complete, and then perform the reagent preparing operation on the reagent of the respective reagent container, and
upon detecting the user input device being pressed for greater than the predetermined time execute the carry-in operation of the respective reagent container by lowering the reagent loader through the opening, perform the reagent preparing operation with priority with respect to the reagent container that has been carried in, and temporarily stop the analyzing operation until the reagent preparing operation has been completed.

US Pat. No. 10,910,194

CHARGED PARTICLE BEAM DEVICE AND OPTICAL-AXIS ADJUSTING METHOD THEREOF

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:a charged particle source which emits a charged particle beam to be radiated on a sample;
a condenser lens system which has at least one condenser lens configured to focus the charged particle beam at a predetermined demagnification;
an objective lens;
an aperture which is arranged between the condenser lens system and the objective lens;
a deflector which is positioned between a condenser lens of a most downstream side in the condenser lens system and the charged particle source, and configured to move a focusing point of the condenser lens system in a direction away from an optical axis of the objective lens; and
a control unit which is configured to control the deflector and the demagnification by controlling the condenser lens system, wherein
the control unit is configured to control the deflector to move the focusing point of the condenser lens system in a direction away from the optical axis of the objective lens to a position of suppressing a deviation, which is caused by a deviation of the optical axis between the components included in the charge particle beam device and a change of the demagnification of the condenser lens system, of a center trajectory of the charged particle beam downstream of the condenser lens system in view of a sensitivity of a displacement of the focusing point of the condenser lens changing depending on the demagnification of the condenser lens system.

US Pat. No. 10,910,230

SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

HITACHI HIGH-TECH CORPORA...

1. A semiconductor manufacturing apparatus, comprising: a container in which a processing chamber is installed; a stage installed in the processing chamber and configured to hold a semiconductor substrate; a gas supply line configured to supply reactive gas to the processing chamber; a vacuum line configured to exhaust the processing chamber; a trap installed in the vacuum line and configured to recover the reactive gas and organometallic complex exhausted from the processing chamber, wherein the semiconductor substrate includes a high-k insulating film, and as the reactive gas, mixed gas including complex-forming gas forming a volatile organometallic complex by reacting with a metal element included in the high-k insulating film and complex stabilizing material gas that increases stability of the organometallic complex is supplied, and a collecting and sorting device configured to react the reactive gas and the organometallic complex collected by the trap with an acid treatment liquid to regenerate a raw material for the complex-forming gas and a raw material for the complex stabilizing material gas.

US Pat. No. 10,890,594

AUTOMATED ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automated analyzer comprising:a reagent container storage apparatus that cools reagent containers,
wherein the reagent container storage apparatus includes:
a reagent storage chamber for storing reagent containers, in which a bottom surface and a side surface thereof is cooled by a first cooling source,
a reagent chamber lid covering the reagent storage chamber,
an inner wall made of a heat transfer material arranged inside the reagent chamber lid so as to cover the reagent containers stored in the reagent storage chamber and thermally connected to the reagent storage chamber, the reagent chamber lid and the inner wall include a plurality of dispensing holes communicating between inside and outside of the reagent container storage apparatus, and
a shielding arranged inside the reagent chamber lid, the shielding member physically and thermally connected to the inner wall and extending vertically from the inner wall toward the bottom surface of the reagent storage chamber, the shielding member surrounding a vicinity of the plurality of dispensing holes and shielding the reagent container storage apparatus from outside air flowing through the dispensing holes and also cooling the outside air.

US Pat. No. 10,884,008

DEVICE FOR STORING BIOCHEMICAL REAGENTS, AND BIOCHEMICAL ANALYZER

HITACHI HIGH-TECH CORPORA...

1. A device for storing biochemical reagent comprising:a device body in which an opening of a dripping space on which reagent is dripped is formed on a joining surface; and
a reagent storage container that has an enclosed space in which the reagent is enclosed, the opening of the enclosed space being integrally sealed by a joint that forms a joining surface with the device body,
wherein in a state in which the joining surfaces of the device body and the reagent storage container are joined to each other by aligning positions of the dripping space and the enclosed space, when an outer wall of the enclosed space of the reagent storage container is pushed, a sealed portion that seals the opening of the enclosed space in the joint is configured to be ruptured by being deformed into the dripping space of the device body, wherein the enclosed space is configured such that, upon being ruptured, an outer surface of the enclosed space forms a shape that is substantially complementary to a shape of the dripping space,
the reagent storage container is made up of a base sheet member in which a plurality of enclosed spaces is formed, and a top sheet member that forms the joint,
the top sheet member is joined and fixed to the base sheet member in a state in which the different reagents are stored in the plurality of enclosed spaces, to seal each of the plurality of enclosed spaces,
the reagent storage container is configured by joining and fixing the top sheet member of the same configuration to the base sheet member in which at least one of a set of numbers, a set of shapes, or a set of arrangements of the enclosed spaces are different in accordance with a difference in patterns of each of the different reagents enclosed in each of the plurality of enclosed spaces, regardless of differences in the set of numbers, the set of shapes, or the set of arrangements of the enclosed spaces of the base sheet member, and the enclosed space and the dripping space have substantially the same shape.

US Pat. No. 10,884,009

AUTOMATED ANALYZER

Hitachi High-Tech Corpora...

1. An automated analyzer dispensing and causing a sample and a reagent to react with each other in a reaction container to measure a reacted mixed solution, the automated analyzer comprising:a plurality of dispensing probes, including reagent probes and sample probes, each of which is configured to dispense a reagent or a sample to be analyzed, respectively, into the reaction container,
a supply port storing conductive liquid with which the reagent probes come into contact,
a conductive-liquid supply unit supplying the conductive liquid, through a flow path connected to the supply port, to the supply port,
a liquid-surface contact determination unit, including a capacitance sensor, installed in each of the plurality of dispensing probes, and determining a contact of a leading end of each of the plurality of dispensing probes with a liquid surface of the conductive liquid, based on a change in capacitance between the leading end and a housing, and
a charge accumulation unit, including a capacitor, provided between the conductive liquid and the housing, and having a capacitance that is equal to or higher than a capacitance of each of the plurality of dispensing probes.

US Pat. No. 10,886,101

CHARGED PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

7. A charged particle beam device, comprising:a charged particle source that emits a charged particle beam;
a boosting electrode disposed between the charged particle source and a sample to form a path of the charged particle beam and accelerate and decelerate the charged particle beam;
a first pole piece that covers the boosting electrode;
a second pole piece that covers the first pole piece;
a first lens coil disposed outside the first pole piece and inside the second pole piece to form a first lens;
a second lens coil disposed outside the second pole piece to form a second lens;
a control electrode formed between a distal end portion of the first pole piece and a distal end portion of the second pole piece to control an electric field formed between the sample and the distal end portion of the second pole piece; and
a division unit detachably formed on the charged particle beam device, wherein
the division unit includes a distal end portion of the second pole piece on the sample side,
a component is insertable into the charged particle beam device into a division position between the division unit and the charged particle source, and
the component is a throttle hole for vacuum differential exhaustion.

US Pat. No. 10,886,106

PLASMA PROCESSING APPARATUS AND METHOD FOR VENTING A PROCESSING CHAMBER TO ATMOSPHERE

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber in which a processing target object is subjected to plasma processing;
an evacuating pipe for reducing a pressure in the processing chamber having an atmospheric pressure;
a stage on which the processing target object is placed;
a heat-transfer gas evacuating unit that evacuates, via the evacuating pipe, a heat-transfer gas which is supplied to a back surface of the processing target object in order to transfer heat of the stage subjected to temperature adjustment;
a first gas supplying mechanism that supplies a first gas for purging a portion of the evacuating pipe which is exposed to atmosphere; and
a control device configured to control the first gas supplying mechanism such that the first gas is continuously supplied to the portion of the evacuating pipe which is exposed to the atmosphere, during a time from after venting the processing chamber to the atmosphere to a start of evacuation of the processing chamber in a case where the processing chamber is open to the atmosphere.

US Pat. No. 10,886,110

PLASMA PROCESSING APPARATUS AND PREDICTION METHOD OF THE CONDITION OF PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus in which a state is predicted by an analysis apparatus, comprising:a processing chamber in which a sample is subjected to plasma processing,
wherein the analysis apparatus predicts the state based on a first soundness index value obtained by analyzing a first data obtained from the plasma processing apparatus using a first algorithm and a second soundness index value obtained by analyzing a second data obtained from the plasma processing apparatus using a second algorithm,
wherein the first algorithm is an algorithm in which a first time of the plasma processing is a time in which the state is determined as abnormal by the first time soundness index value, and
wherein the second algorithm is an algorithm in which a second time of the plasma processing is a time within a range of a third time to a fourth time,
wherein the second time of the plasma processing is a time in which the state is determined as abnormal by the second soundness index value,
wherein the third time is a time obtained by subtracting a predetermined time from the first time, and
wherein the fourth time is a time obtained by adding the predetermined time to the first time.

US Pat. No. 10,871,464

ION-SELECTIVE ELECTRODE, METHOD OF MANUFACTURE THEREOF, AND CARTRIDGE

Hitachi High-Tech Corpora...

1. An ion-selective electrode comprising:an ion sensitive film having a Group-1 element ion, a Group-2 element ion, a hydronium ion or an ammonium ion as a target ion;
an ion occluding material layer; and
a conductive electrode,
wherein an ion occluding material contained in the ion occluding material layer occludes the target ion,
the ion occluding material being a Prussian blue analog represented by structure formula AaMx[M?(CN)6]y?zkH2O, wherein
A is at least one of a Group-1 element, a Group-2 element, hydronium, or ammonium,
M and M? are at least one type of transition metals,
M or M? includes at least one of nickel, cobalt, copper, silver, and cadmium,
? is a vacancy in a porous coordination polymer, and
x and y are greater than zero; and a, z, and k are numbers equal to or greater than zero.

US Pat. No. 10,872,750

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING SYSTEM

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a plasma processing unit that performs plasma processing of a sample; and
a control unit that controls the plasma processing,
wherein the control unit selects one of a plurality of prediction models for predicting a result of the plasma processing for each of a plurality of divided data of a management value based on a state of the plasma processing unit, and predicts the result of the plasma processing by using the selected prediction model selected for each said divided data,
wherein the divided data is data divided based on a threshold of the management value indicating a state of the plasma processing unit.

US Pat. No. 10,872,779

PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. An plasma etching method for etching a film layer of an object to be processed disposed in a processing chamber inside a vacuum container and is made of a member containing silicon, the plasma etching method comprising:forming a film by repeating a set of steps a plurality of times, the set of steps including
a first step of introducing a gas containing at least hydrogen fluoride into the processing chamber and supplying hydrogen fluoride molecules to a surface of the film layer of the object to be processed,
after said first step, a second step of stopping the supply of the gas containing hydrogen fluoride into said processing chamber, and exhausting the interior of the processing chamber to reduce the gas containing hydrogen fluoride, and
after said second step, starting a third step of supplying hydrogen nitride molecules to the surface of the film layer of the object to be processed to form a compound layer containing nitrogen, hydrogen, and fluorine on the surface of the film layer; and
removing the compound layer formed on the surface of the film layer to be processed after the forming of the film.

US Pat. No. 10,867,134

METHOD FOR GENERATING TEXT STRING DICTIONARY, METHOD FOR SEARCHING TEXT STRING DICTIONARY, AND SYSTEM FOR PROCESSING TEXT STRING DICTIONARY

HITACHI HIGH-TECH CORPORA...

1. A method for generating a text string dictionary,the method being executed by a text string data analyzing device including a multicore CPU having a plurality of CPU cores and a memory,
the text string dictionary loaded in the memory being divided into a plurality of blocks, the blocks being added thereto respective labels different from each other, the label including an alphabet constituting text string data and one or more delimiters,
the method for generating a text string dictionary comprising the steps, performed by the multicore CPU, of:
registering, for each of the inputted text string data, the last character of the received text string data as an entry of the block in the blocks added thereto the labels of the delimiters, and making the last character associate with a remaining text string obtained by excluding the last character from the text string data, as an unregistered text string;
executing an entry registration process in parallel on each of the blocks grouped into appropriate blocks executable independently of each other, the entry registration process comprising the substep of reading registration source blocks in which the unregistered text strings are associated with the entries of the blocks, the substep of registering last characters of the unregistered text strings of the registration source blocks as new entries in registration destination blocks identified from the labels and entries of the registration source blocks, and the substep of associating remaining text strings obtained by excluding the new entries from the unregistered text strings as new unregistered text strings; and
outputting, as Burrows-Wheeler (BW) transformed data of the text string dictionary in which the text string data is already registered, a text string obtained by coupling text strings registered in the entries of the blocks in the order of alphabets indicated by the labels of the blocks and the delimiters in a state in which no unregistered text strings of the blocks exists.

US Pat. No. 10,811,231

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

HITACHI HIGH-TECH CORPORA...

1. A plasma processing method that processes a wafer, which is placed on a surface of a sample stage arranged in a processing chamber inside a vacuum container, using a plasma formed in the processing chamber, the method comprising:processing the wafer by adjusting a first high-frequency power to be supplied to a first electrode arranged inside the sample stage and a second high-frequency power to be supplied, via a resonant circuit, to a second electrode which is arranged in an inner side of a ring-shaped member made of a dielectric arranged on an outer peripheral side of a surface of the sample stage on which the wafer is placed during the processing,
wherein the second high-frequency power to be supplied to the second electrode via the resonant circuit to which a coil and a capacitor are arranged in series is adjusted in the processing.

US Pat. No. 10,808,312

CHARGED PARTICLE DEVICE AND WIRING METHOD

HITACHI HIGH-TECH CORPORA...

3. A wiring method, comprising:placing an ionic liquid at a first position on a sample table to be subject to wiring and a sample at a second position on the sample table, the ionic liquid and the sample being apart from each other;
irradiating the ionic liquid with a charged particle beam to perform wiring on the sample table; and
forming a wiring line by moving an irradiation position of the charged particle beam moved from the first position where the ionic liquid is placed to the second position where the sample is placed.

US Pat. No. 10,768,193

AUTOMATIC ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer, comprising:a sample probe configured to suck a specimen and discharge the specimen into a reaction vessel;
a reagent probe configured to suck a reagent and discharge the reagent into the reaction vessel;
a photometer configured to analyze a mixture of the specimen and the reagent in the reaction vessel;
a reagent disk configured to hold a reagent bottle storing the reagent;
a needle configured to form a cut in a lid of the reagent bottle;
a lid opening mechanism configured to drive the needle; and
a controller configured to control the lid opening mechanism,
wherein the needle comprises: a piercing portion including a plurality of blades for forming the cut in the lid of the reagent bottle and a cylindrical expansion portion configured to push into and open the cut,
wherein the plurality of blades are disposed at vertices of a regular polygon as viewed from a distal end of the piercing portion,
wherein the cylindrical expansion portion has a diameter smaller than a maximum diameter of a circumscribed circle passing through all vertices of the regular polygon of the plurality of blades of the piercing portion and has the diameter that is equal to or larger than a maximum diameter of the reagent probe within a range within which the reagent probe is inserted into the reagent bottle before the reagent probe sucks the reagent,
wherein the cylindrical expansion portion includes a stepped portion,
wherein the piercing portion includes a tapered portion extending from a vertex of the regular polygon of a blade of the plurality of blades toward the stepped portion of the cylindrical expansion portion,
wherein an axial length of the cylindrical expansion portion is greater than an axial length of the piercing portion, and
wherein the controller is programmed to control the lid opening mechanism so that the needle is inserted to the expansion portion after the cut is formed in the lid of the reagent bottle by the piercing portion.

US Pat. No. 10,770,259

STAGE DEVICE AND CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A sample stage to support a sample, the sample stage comprising:a table;
a guide rail that extends in a moving direction;
a carriage configured to move along the guide rail in the moving direction together with the table by rotation of a rolling element included inside the carriage; and
an adapter connecting the table and the carriage,
wherein the adapter has a first protruding portion protruding toward the carriage and connected the carriage, and the first protruding portion has a length in the moving direction which is longer than a length thereof in a direction orthogonal to the moving direction, and
wherein the adapter has a second protruding portion protruding toward the table and connected to the table, and the second protruding portion has a length in the direction orthogonal to the moving direction which is longer than a length thereof in the moving direction.

US Pat. No. 10,761,000

LIQUID STIRRING METHOD

HITACHI HIGH-TECH CORPORA...

5. An automatic analyzing apparatus comprising:a container configured to hold a mixed liquid comprised of a first liquid and a second liquid;
a probe and a syringe which are connected by a pipe and are configured to suck and discharge the mixed liquid within the container by driving the syringe; and
a control device programmed to:
determine whether a total liquid volume of the mixed liquid is greater than a prescribed threshold;
in a case where the total liquid volume of the mixed liquid is greater than the prescribed threshold, control the probe and syringe to perform a first stirring process only once by controlling driving of the syringe, the first stirring process including sucking out the mixed liquid from the first container by controlling driving of the syringe to a first syringe drive amount and discharging the mixed liquid from the syringe into the mixed liquid remaining in the first container by controlling driving of the syringe to a second syringe drive amount, that is greater than the first syringe drive amount; and
in a case where the total liquid volume of the mixed liquid is equal to or less than the prescribed threshold, control the probe and syringe to repeatedly perform a second stirring process for a predetermined number of times by controlling driving of the syringe, the second stirring process including sucking out the mixed liquid from the first container by controlling driving of the syringe to a third syringe drive amount and discharging the mixed liquid from the syringe into the mixed liquid remaining in the first container by controlling driving of the to a fourth syringe drive amount, that is greater than the third syringe drive amount and smaller than the first syringe drive amount,
wherein, in the first stirring process, the mixed liquid sucked out from the first container is smaller than the total liquid volume of the mixed liquid, and
wherein, in the second stirring process, the mixed liquid sucked out from the first container is smaller than the total liquid volume of the mixed liquid.

US Pat. No. 10,752,941

CELL ANALYSIS DEVICE, APPARATUS, AND CELL ANALYSIS METHOD USING SAME

HITACHI HIGH-TECH CORPORA...

1. A cell analysis method using a cell analysis device which includes:a solution introduction channel,
a two-dimensional array chip disposed above the solution introduction channel and having a plurality of cell capture parts and a plurality of nucleic acid capture parts, the cell capture parts being provided in communication with the solution introduction channel and each being capable of capturing a single cell, and each of the nucleic acid capture parts being provided in communication with a corresponding cell capture part of the plurality of cell capture parts and having a porous material or beads on which a nucleic acid probe configured to capture nucleic acid extracted from the single cell having been captured by the corresponding cell capture part, and
a discharge channel disposed above the two-dimensional array chip in communication with the plurality of cell capture parts and having a three-dimensional porous member,
the cell analysis method comprising:
introducing a solution containing cells to the solution introduction channel;
applying a negative pressure to the discharge channel to suck the solution from the solution introduction channel and adsorb the cells on the cell capture parts, the negative pressure bringing the two-dimensional array chip into contact with the three-dimensional porous member of the discharge channel;
maintaining the negative pressure while extracting and capturing nucleic acid with the nucleic acid probe in the nucleic acid capture parts;
introducing a reagent for nucleic acid amplification to the solution introduction channel;
applying a negative pressure to the discharge channel to suck the reagent from the solution introduction channel and introduce the reagent to the nucleic acid capture parts, the negative pressure bringing the two-dimensional array chip into contact with the three-dimensional porous member of the discharge channel;
separating the two-dimensional array chip from the three-dimensional porous member; and
after the two-dimensional array chip is separated from the three-dimensional porous member, starting an amplification reaction with the reagent and the captured nucleic acid.

US Pat. No. 10,755,890

CHARGED PARTICLE BEAM APPARATUS

Hitachi High-Tech Corpora...

1. A charged particle beam apparatus comprising:a deflector that deflects a charged particle beam emitted from a charged particle source;
a charged particle beam source configured to generate a charged particle beam;
a stage that moves a sample that is an irradiation target of the charged particle beam;
a set of charged particle-optical elements configured to switch the charged particle beam between a first dose amount and a second dose amount, wherein the second dose amount is greater than the first dose amount, wherein the set of charged particle-optical elements includes the deflector;
a detector configured to detect charged particles generated based on irradiation of the sample with the charged particle beam; and
an image processing unit configured to generate a first image based on an output of the detector, count a number of objects included in the first image formed by irradiating the sample with the charged particle beam with the first dose amount, and in a case where the number of the objects reaches a predetermined value, generate a second image by irradiating the sample with the charged particle beam with the second dose amount;
a scan control unit programmed to control the deflector and the stage, such that at least one of the stage and the deflector is controlled so as to move a field of view from a reference position to an inspection or measurement target pattern;
wherein the set of charged particle-optical elements is configured to switch the charged particle beam from the first dose amount to the second dose amount when the number of objects included in the first image reaches the predetermined value.

US Pat. No. 10,755,897

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a vacuum processing chamber in which a sample is subjected to plasma processing;
a sample stage on which the sample is placed and which comprises a first electrode for electrostatically adsorbing the sample and a second electrode disposed outside the first electrode for electrostatically adsorbing the sample;
a first radio frequency power supply that supplies a first radio frequency power to the first electrode via a first transmission path;
a second radio frequency power supply that supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the second electrode via a second transmission path;
a third radio frequency power supply that supplies a third radio frequency power for generating plasma;
a crosstalk suppression unit that is disposed between the first transmission path and the second transmission path for suppressing crosstalk that causes one transmission path to affect the other transmission path; and
a control device configured to control a phase difference between a phase of the first radio frequency power and a phase of the second radio frequency power so that a phase of a radio frequency voltage applied to the first electrode and a phase of a radio frequency voltage applied to the second electrode are approximately equal to each other,
wherein the crosstalk suppression unit includes an inductance, and
wherein a value of the inductance is a value obtained based on a minimum value of a value obtained by dividing a potential of the second transmission path by a potential of the first transmission path.

US Pat. No. 10,753,873

MULTICOLOR DETECTION DEVICE

HITACHI HIGH-TECH CORPORA...

1. A multicolor detection system comprising:a condensing-lens array having m condensing lenses that individually condense lights respectively emitted from m light-emitting points that are arranged in a light-emitting-point array and turn the lights into m light beams, where m is an integer greater than or equal to 2;
a dichroic mirror set having n dichroic mirrors including a first dichroic mirror and a second dichroic mirror, arranged substantially in parallel, where n is an integer greater than or equal to 2; and
one sensor,
wherein:
the m light beams are respectively incident in parallel on the first dichroic mirror, and the first dichroic mirror divides the m light beams into m first transmitted light beams and m first reflected light beams,
the m first reflected light beams are respectively incident in parallel on the second dichroic mirror, and the second dichroic mirror converts the m first reflected light beams into m second reflected light beams, and
the m first transmitted light beams and the m second reflected light beams are respectively incident in parallel on the sensor without being re-condensed.

US Pat. No. 10,748,742

DEVICE FOR DUST EMITTING OF FOREIGN MATTER AND DUST EMISSION CAUSE ANALYSIS DEVICE

Hitachi High-Tech Corpora...

1. A device comprising:a control device;
a sample chamber for fixing a sample of a semiconductor wafer, a reticle, or a TFT substrate to a stage and processing;
a sample exchange chamber;
a mechanism that loads and unloads the sample to and from the sample chamber through the sample exchange chamber;
a user interface,
wherein the mechanism has a plurality of portions,
the control device stores a foreign matter emission recipe composed of a plurality of scripts for causing the plurality of portions to perform an operation,
the plurality of scripts are associated with a plurality of samples, and
the control device executes the foreign matter emission recipe, so that a particular portion of the plurality of portions of the mechanism is operated multiple times without interruption in a foreign matter generation test operation, and at least one other of the plurality of portions of the mechanism is operated multiple times without interruption in the foreign matter generation test operation, so that the foreign matter emitted during the foreign matter generation test operation sticks to the plurality of samples,
the control device outputs information indicating a storage position in a sample storage container for storing the plurality of samples to which the foreign matter is attached to the user interface.

US Pat. No. 10,739,364

LIQUID SURFACE INSPECTION DEVICE, AUTOMATED ANALYSIS DEVICE, AND PROCESSING DEVICE

HITACHI HIGH-TECH CORPORA...

6. An automatic analyzer comprising:a sample container transfer mechanism for transferring a sample container containing samples;
a reagent container transfer mechanism for transferring a reagent container containing reagents to be mixed with the samples;
a reaction container transfer mechanism for transferring a reaction container containing reaction liquids resulting from mixture of the samples and the reagents;
an imaging mechanism for capturing images of the liquids contained in at least any of the sample container, the reagent container, and the reaction container; and
a controller connected to the imaging mechanism that is programmed to:
detect a first condition of a liquid surface using color information contained in the image,
calculate a brightness gradient in the captured image based on a pixel brightness along a tangential direction of a circle that is coaxial with an inner wall surface configuration of the container, and
determine a second condition of the liquid surface of the liquid substance based on the calculated brightness gradient.

US Pat. No. 10,724,856

IMAGE ANALYSIS APPARATUS AND CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam apparatus comprising:a charged particle beam source;
a sample table on which a sample having a first pattern and a second pattern is disposed, the second pattern being disposed over the first pattern and intersecting with the first pattern;
a charged particle beam optical system that irradiates the sample with charged particles emitted from the charged particle beam source as a charged particle beam;
an image analysis apparatus that irradiates the sample with the charged particle beam to evaluate the sample using signal data obtained from the sample, wherein
the image analysis apparatus includes:
a memory;
an input/output device;
a display; and
a processor communicatively coupled to the memory, the input/output device and the display, the processor is configured to:
include a first region including a first portion where the first pattern and the second pattern intersect with each other and a second region wherein the second pattern is disposed at a position where the first pattern is not formed, and calculate an analysis range of the signal data to be processed;
average a plurality of signal profiles obtained in the analysis range;
calculate a maximum value and a minimum value of signal intensity in the averaged signal profile;
calculate a threshold level difference;
calculate an edge of the second pattern in the signal profile using the threshold level difference;
wherein
the first pattern is a pattern of a conductor layer buried in an insulating film.

US Pat. No. 10,692,693

SYSTEM AND METHOD FOR MEASURING PATTERNS

HITACHI HIGH-TECH CORPORA...

1. A measuring system that measures a pattern formed on a sample, the measuring system comprising:an irradiation optical system configured to deflect, scan, and irradiate the pattern with a charged particle beam;
a detector that detects backscattered electrons from the pattern caused by the irradiation;
a controller configured to control deflection, scanning and irradiation of the pattern with the charged particle beam; and
a processor programmed to process one or more signal intensities which correspond to the detected backscattered electrons from scanning the charged particle beam at one or more incident angles,
wherein the processor is further programmed to:
determine a first displaced amount between a top surface of the pattern and a bottom surface of the pattern from a first signal intensity corresponding to scanning of the charged particle beam at a first incident angle, and
calculate a depth between the top surface and the bottom surface of the pattern from the first displaced amount and the first incident angle.

US Pat. No. 10,692,784

VACUUM PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A vacuum processing apparatus comprising:a processing chamber disposed inside a vacuum vessel and depressurized by an inside being evacuated;
a sample stage disposed inside the processing chamber, a wafer to be processed being disposed on an upper surface of the sample stage; and
an opening communicating with an exhaust pump disposed below the sample stage to evacuate the inside of the processing chamber, wherein the wafer is processed using plasma generated in the processing chamber above the sample stage,
wherein the sample stage includes a metallic base material having a film made of a dielectric, the wafer being placed on an upper surface thereof, a metallic base plate disposed below the base material and insulated from the base material with an insulating member interposed therebetween, and a cylindrical base member which is disposed below the base plate and which surrounds a space which is set to an atmospheric pressure therein, the base material and the insulating member being fastened to the base plate, and the base plate being connected to the cylindrical base member so as to cover said space,
wherein the insulating member includes a ring-shaped first member having a large rigidity disposed in an outer peripheral region of the insulating member to interpose a seal member airtightly sealing an inner peripheral side space which communicates with an outside of the vacuum vessel and set to an atmospheric pressure from an inside of the processing chamber on outer peripheral regions of the base material and the base plate, and a plate-shaped second member having a small rigidity disposed in a region on an inner periphery side of the first member,
wherein the vacuum processing apparatus further comprises a plurality of temperature sensors each of which penetrates the base plate and the second member of the insulating member, and which is inserted into the base material, and
wherein the base plate fastened to the base material and the insulating member are removable upward to an outside of the processing chamber from the base material in a state in which the plurality of temperature sensors is installed.

US Pat. No. 10,679,819

ABERRATION CORRECTING DEVICE FOR AN ELECTRON MICROSCOPE AND AN ELECTRON MICROSCOPE COMPRISING SUCH A DEVICE

Hitachi High-Tech Corpora...

1. An aberration correcting device for correcting aberrations of an electron beam in an electron microscope, wherein the aberration correcting device comprises:a first and a second electron mirror, each comprising an electron beam reflecting face,
an intermediate space, wherein the intermediate space comprises a input side for inputting the electron beam into the intermediate space, and an exit side for exiting the electron beam out of the intermediate space,
wherein the first and second electron mirror are arranged at opposite sides of the intermediate space, and wherein the reflective face of the first electron mirror and the reflective face of the second mirror are arranged to face said intermediate space,
wherein the first mirror is arranged at the exit side and is configured to receive the electron beam coming from the input side and to reflect the electron beam via the intermediate space towards the second mirror,
wherein the second mirror is arranged at the input side and is configured to receive the electron beam coming from the first mirror at a reflection position on the second mirror and to reflect the electron beam via the intermediate space towards the exit side,
wherein the aberration correcting device is configured such that an incoming electron beam passes said second mirror at a position spaced apart from the reflection position on the second mirror, and
wherein at least one of said first and second electron mirrors is configured to provide a correcting aberration to a reflected electron beam, wherein said at least one of said first and second mirrors comprises an electrostatic mirror, wherein said electrostatic mirror comprises at least three electrodes, wherein two of said at least two electrodes are configured for transmitting an electron beam and for, in use, providing an electrostatic lens.

US Pat. No. 10,679,821

LIGHT GUIDE, DETECTOR HAVING LIGHT GUIDE, AND CHARGED PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged particle beam device comprising:a scintillator;
a light guide having
an incident surface configured to incident alight from the scintillator,
an emission surface configured to emit a light incident from the incident surface, and
a first surface configured to guide the light incident from the incidence surface to a side of the emission surface; and
an electron optical system configured to be bent to the scintillator, wherein
secondary particles or tertiary particles emitted from a sample incident to the scintillator,
the light guide has a bent portion,
a surface of the bent portion has a curved outer surface which is a curved surface outside of the bent portion of the light guide and is starting from an end of the incident surface, and
the curved outer surface has a tangential line leaning to the incident surface side from a normal line on the incident surface at a contact between the curved outer surface and the incident surface.

US Pat. No. 10,663,416

PATTERN MEASURING METHOD, PATTERN MEASURING APPARATUS, AND COMPUTER PROGRAM STORAGE DEVICE

Hitachi High-Tech Corpora...

1. A pattern measuring method for measuring a pattern based upon detection signals obtained by scanning a beam a plurality of times on the pattern formed on a sample, the method comprising:acquiring signals of a plurality of frames obtained by scanning the beam a plurality of times on the pattern formed on the sample;
generating a plurality of integration signals having the different number of integration from the signals of the plurality of frames;
acquiring edge position information of the pattern along an edge from the plurality of respective integration signals having the different number of integration;
obtaining a difference between the edge position information and reference position information;
obtaining a spectral component of a specific spatial frequency of the edge or a standard deviation based upon the difference;
performing regression analysis in which a value relating to the number of integration is set as an explanatory variable, and a value relating to the spectral component or the standard deviation is set as a target variable; and
outputting a value obtained by the regression analysis as a roughness index value of the pattern or a noise index value included in the signals.

US Pat. No. 10,973,112

CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:a charged particle source;
an extraction electrode configured to extract a charged particle from the charged particle source;
an extraction-electrode power source configured to apply a voltage to the extraction electrode;
an acceleration electrode configured to accelerate the charged particle;
an acceleration power source configured to apply a voltage to the acceleration electrode;
a diode and a resistor connected in series between a middle stage of the acceleration power source and an output side of the extraction-electrode power source;
a power source control unit configured to control the acceleration power source and the extraction-electrode power source; and
an extraction-electrode power source node switch configured to disconnect the extraction-electrode power source from a circuit, wherein
the power source control unit turns off the extraction-electrode power source node switch when a generation of an abnormality in the extraction-electrode power source is detected,
the extraction-electrode power source voltage detection unit is configured to detect a voltage of the extraction-electrode power source, and
the power source control unit detects the generation of the abnormality in the extraction-electrode power source using the voltage detected by the extraction-electrode power source voltage detection unit.

US Pat. No. 10,971,325

DEFECT OBSERVATION SYSTEM AND DEFECT OBSERVATION METHOD FOR SEMICONDUCTOR WAFER

HITACHI HIGH-TECH CORPORA...

1. A defect observation system for a semiconductor wafer, comprising:a stage on which the semiconductor wafer is placed and which is movable in an XY direction; and
a processor configured to control an electron source which irradiates the semiconductor wafer with an electron beam to obtain a plurality of images each having a portion including an edge of the semiconductor wafer, each said image being obtained while moving the semiconductor wafer in an XY direction on a plane,
wherein the processor is further configured to, with respect to said plurality of obtained images, output a plurality of selected images which are selected from among said plurality of obtained images and in which edges of the semiconductor wafer are substantially in parallel, and to detect a defect of the semiconductor wafer in the output images in which edges of the semiconductor wafer are substantially parallel.

US Pat. No. 10,971,328

CHARGED PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged particle beam device comprising:a charged particle source that generates a primary charged particle beam;
an objective lens that focuses the primary charged particle beam on a sample;
four detectors that are disposed closer to a side of the charged particle source than. the objective lens, are disposed symmetrically around an optical axis of the primary charged particle beam, and detect secondary particles emitted by irradiating the sample with the primary charged particle beam;
an electrode, including four electrodes arranged in a circumferential direction. around. the optical axis of the primary charged particle beam, that forms an electric field in a direction corresponding to each of the four detectors between travel routes of secondary particles from the sample to the four detectors;
wherein the electric field acts in an azimuth direction of the secondary particles, and deflects the secondary particles emitted toward a region between the four detectors into a direction of a detection surface of each of the four detectors.

US Pat. No. 10,971,329

FIELD IONIZATION SOURCE, ION BEAM APPARATUS, AND BEAM IRRADIATION METHOD

HITACHI HIGH-TECH CORPORA...

9. A gas field ionization source, comprising:an emitter tip that has a needle-shaped apex;
an extraction electrode that has an opening facing the emitter tip and located at a distance from the emitter tip;
gas feed piping for feeding gas into an area around the emitter tip;
a unit that applies and adjusts a voltage between the emitter tip and the extraction electrode to produce an electric field for ionization of the gas; and
a unit that cools the emitter tip,
wherein the gas is a gas containing hydrogen, and the gas field ionization source has an operating status in which an extraction voltage is applied between an emitter electrode and an extraction electrode; and
wherein the extraction voltage is set around a second voltage higher than a first voltage, the first voltage giving a first maximum of an ion current per the extraction voltage, and the second voltage giving a second maximum of an ion current per the extraction voltage, such that an abundance ratio of a H3+ ion in a probe current is the highest in ion species emitted from the emitter tip, and an energy width of the H3+ ion is smaller than an energy width of a H2+ ion, and
wherein the ion species include a H+ ion, the H2+ ion and the H3+ ion.

US Pat. No. 10,971,347

CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam apparatus comprising:a charged particle gun;
a scanning deflector configured to scan a charged particle beam emitted from the charged particle gun onto a sample;
a scanning control voltage generator for generating a scanning control voltage to be input to the scanning deflector;
a detector configured to detect an external scanning control voltage, which is input from an outside into the scanning deflector and is different from the scanning control voltage;
an arithmetic unit configured to calculate, based on the detected external scanning control voltage, irradiation pixel coordinates for the charged particle beam;
an irradiation controller configured to control irradiation of the sample with the charged particle beam according to the irradiation pixel coordinates.

US Pat. No. 10,971,369

PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing method for etching a film to be etched by repeating a depositing process, the method comprising:a first step of depositing a layer over the film to be etched;
a second step of removing a reaction product of the deposited layer and the film to be etched; and
a monitoring process for monitoring a change amount of a film thickness of the deposited layer during said first step of depositing said layer using change of a coherent light that is obtained by irradiating a polarized light polarized to a predetermined angle with respect to a mask pattern of the film to be etched and is reflected by the mask pattern.

US Pat. No. 10,962,558

AUTOMATIC ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer comprising:a reaction disk holding a plurality of reaction vessels;
a sample dispensation mechanism including a sample nozzle which sucks in a sample stored in a sample vessel and discharges a suctioned sample into a reaction vessel of the plurality of reaction vessels;
a reagent dispensation mechanism which sucks in a reagent stored in a reagent vessel and discharges the reagent into the reaction vessel;
a cleaning bath, including a solenoid valve and a pump, which cleans the sample nozzle with cleaning water;
an analysis unit which analyzes the sample in the reaction vessel; and
a controller which controls the operation of the sample dispensation mechanism, the reagent dispensation mechanism, the cleaning bath and the analysis unit according to successive predetermined and constant operation cycles, wherein an operation cycle is a first period of time in which the reaction disk rotates by a first amount,
wherein the controller is programmed to:
in a suction sample process, control the sample dispensation mechanism to suction a sample stored in a sample vessel and discharge a suctioned sample,
in a cleaning operation, control the solenoid valve to open and close and control the pump to pump cleaning water thereby cleaning an inside of the sample nozzle,
perform the suction sample process of a same sample from a same sample vessel at least twice, upon determining the sample nozzle sucked and discharged an amount of the same sample that is more than or equal to a threshold value at a latest suction sample process among the at least two suction sample processes of the same sample, perform the cleaning operation of cleaning the inside of the sample nozzle multiple times in a subsequent operation cycle which is after an operation cycle in which the latest suction sample process was performed in which the sample nozzle sucked and discharged the same sample, and
upon determining the sample nozzle sucked and discharged an amount of the same sample that is more than or equal to the threshold value at the latest suction sample process and at at least one other suction sample process among the at least two suction sample processes of the same sample, perform the cleaning operation of cleaning the inside of the sample nozzle multiple times in the subsequent operation cycle which is after the operation cycle in which the latest suction sample process was performed in which the sample nozzle sucked and discharged the same sample and perform the cleaning operation of cleaning the inside of the sample nozzle multiple times in another subsequent operation cycle which is after the subsequent operation cycle.

US Pat. No. 10,962,559

AUTOMATED ANALYSIS SYSTEM

HITACHI HIGH-TECH CORPORA...

1. An automated analysis system comprising:an automated sample analyzer comprising a plurality of reaction vessels and being configured to perform analysis of a plurality of samples by stirring a reagent mixed with one of said plurality of samples within a corresponding one of said reaction vessels; and
a terminal device connected to the automated sample analyzer and being configured to control said automated sample analyzer, wherein
the terminal device includes
a display unit configured to display a maintenance item of the automated analysis device;
a memory; and
a computer configured to select the maintenance item displayed on the display and to control the automated sample analyzer so that all selected maintenance items are executed in parallel by the automated sample analyzer based on a preset maintenance processing table stored in the memory,
wherein the computer is further configured to extract a maintenance item that can be executed in parallel to a selected maintenance item based on the preset maintenance processing table, and to cause the display unit to display the extracted maintenance item.

US Pat. No. 10,964,508

CHARGED-PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged-particle beam device comprising:a detector that detects charged particles obtained by irradiating a sample with a charged- particle beam that is emitted from a charged-particle source;
an energy filter that filters energy of charged particles emitted from the sample;
a deflector that deflects the charged particles emitted from the sample towards the energy filter;
a storage medium that stores a deflection condition of the deflector; and
a control device that adjusts a voltage applied to the energy filter, wherein
the control device
generates a first image based on an output of the detector,
adjusts the voltage applied to the energy filter so that the first image is brought into a predetermined state,
calculates a first parameter that changes corresponding to energy of the charged particles emitted from the sample based on the adjusted voltage applied to the energy filter, and
controls the deflector based on a second parameter that is obtained by referring to the first parameter or substituting the first parameter in an arithmetic expression or a table that indicates a relationship between the first parameter stored in the storage medium and the second parameter indicating the deflection condition, wherein
a reference image is stored in the storage medium, and
the control device controls the voltage applied to the energy filter so that a contrast of the first image matches with a contrast of the reference image, or that the contrast of the first image falls within a predetermined range based on the contrast of the reference image.

US Pat. No. 10,964,513

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing method comprising steps of:locating and holding a wafer to be processed on a top surface of a sample stage disposed in a processing chamber an inside of which is decompressed;
supplying a heat-transfer gas into a gap between the wafer and the top surface of the sample stage; and
generating a plasma in a space above the sample stage inside the processing chamber and starting processing of the wafer,
wherein the heat-transfer gas which is supplied from a gas source flows through a supply path disposed inside the sample stage into the gap via an opening which is arranged on the top surface of the sample stage, and
wherein a supply amount of the heat-transfer gas is adjusted to maintain a pressure of the heat-transfer gas in the gap in an allowable range based upon a pressure value of the heat-transfer gas which is detected at a certain position on the supply path and a value of a pressure drop of the heat-transfer gas between the certain position of the supply path and the gap between the wafer and the top surface of the sample stage via the supply path.

US Pat. No. 10,948,509

AUTOMATIC ANALYSIS DEVICE

HITACHI HIGH-TECH CORPORA...

1. An automatic analysis device comprising: a first reagent disk holding a first reagent;a second reagent disk holding a second reagent;
a sample disk holding a sample;
a plurality of reaction cells on a reaction disk in which the first reagent is dispensed or the second reagent is dispensed or both a sample and the first reagent are dispensed and mixed, respectively;
a first reagent dispensing mechanism configured to move along a first track to the first reagent disk or the second reagent disk or the reaction disk to dispense the first reagent or the second reagent to a reaction cell on the reaction disk;
a first reagent vessel disposed on the first track of the first reagent dispensing mechanism;
a reaction vessel in which a sample and the first reagent are dispensed and mixed or in which the sample, the first reagent and the second reagent are dispensed and mixed;
a second reagent dispensing mechanism configured to move along a second track to aspirate the first reagent or the second reagent or both the first reagent and the sample from the reaction cell on the reaction disk and dispense the first reagent or the second reagent or both the first reagent and the sample to the reaction vessel;
a sample dispensing mechanism disposed on a third track configured to aspirate the sample from the sample disk and dispense the sample to the reaction vessel positioned at a first dispensing position and to the reaction cell positioned at a second dispensing position;
a second reagent vessel disposed on the third track of the sample dispensing mechanism, the reaction vessel being provided on at least one of the second and third tracks; and
a control unit configured to control the first second reagent dispensing mechanisms and the sample dispensing mechanism, wherein
the control unit is configured to perform at least three processes including:
controlling the automatic analysis device to perform the analysis, according to a first process in which the analysis does not require both of the first and second reagents, by using the sample dispensing mechanism and the first reagent dispensing mechanism to dispense the sample and one of the first and second reagents;
controlling the automatic analysis device, according to a second process in which the analysis does require both of the first and second reagents and in which an incubation time is not required for the analysis, to dispense the sample and the first reagent, using the sample dispensing mechanism, to the reaction vessel positioned at the first dispensing position, dispense the second reagent to one of the reaction cells, and thereafter dispense the second reagent to the reaction vessel using the second reagent probe, and
controlling the automatic analysis device, according to a third process in which the analysis does require both of the first and second reagents and in which the incubation time is required for the analysis, to dispense the sample, using the sample dispensing mechanism, to one of the reaction cells positioned at the second dispensing position, dispense the first reagent into the one the reaction cells containing the sample, dispense the second reagent to another reaction cell, and thereafter dispense the sample and first reagent from the one of the reaction cells to the reaction vessel, using the second reagent mechanism, and thereafter dispense the second reagent to the reaction vessel from the another reaction cell using the second reagent mechanism.

US Pat. No. 10,948,424

DEFECT INSPECTION DEVICE, PATTERN CHIP, AND DEFECT INSPECTION METHOD

HITACHI HIGH-TECH CORPORA...

1. A defect inspection device comprising:a pattern chip comprising a plurality of dots;
a table unit for holding a sample to be inspected and upon which the pattern chip is installed;
a light source that emits an illumination light that irradiates a surface of the sample or a surface of the pattern chip with an illumination light shaped to extend in a first direction;
a detection optical system that detects a diffracted light and a scattered light generated from the surface of the sample or the surface of the pattern chip by the illumination light, the detection optical system comprising an objective lens and an image sensor; and
a signal processor configured to adjust a focus of the detection optical system and to detect a defect on the surface of the sample based on a signal output from the detection optical system,
wherein the pattern chip has a dot pattern area in which the plurality of dots are arrayed in a plurality of rows and a plurality of columns, a minimum interval between the dots corresponding to the lines aligned in the first direction among the plurality of dots arrayed in the dot pattern area in a second direction orthogonal to the first direction is smaller than a width of the illumination light, and a minimum interval between the plurality of dots arrayed in the dot pattern area is larger than a resolution of the detection optical system,
wherein said plurality of dots of said dot pattern area are further arranged as a repeating plurality of smaller dot pattern areas each having a different area on said surface of said pattern chip, and
wherein said repeating plurality of smaller dot pattern areas repeat in said first direction.

US Pat. No. 10,942,121

ANALYSIS DEVICE

HITACHI HIGH-TECH CORPORA...

1. An analysis device comprising:a plurality of light emission points;
an optical system that forms images of lights emitted from the light emission points; and
a measurement unit that measures the imaged lights,
wherein a midpoint of any two light emission points among the light emission points is shifted away from an optical axis of the optical system.

US Pat. No. 10,942,147

CAPILLARY CARTRIDGE AND ELECTROPHORESIS APPARATUS

Hitachi High-Tech Corpora...

1. A capillary cartridge which can be attached to an electrophoresis apparatus comprising:a capillary;
a capillary head that bundles one end of the capillary;
an electrode that is provided in the other end of the capillary;
a detection unit that is provided in a part of the capillary;
a support body that supports the electrode and the detection unit, and holds the capillary which is located at least from the electrode to the detection unit; and
a heat dissipation body that is provided between the capillary and the support body,
wherein the support body covers the capillary from the electrode to the capillary head,
wherein the capillary, the capillary head, the electrode, the detection unit, the support body, and the heat dissipation body are attached to the electrophoresis apparatus as an integral structure, and
wherein an outer peripheral portion of the support body includes a protrusion portion that protrudes toward the heat dissipation body, and a gap is provided between an end portion of the heat dissipation body and the outer peripheral portion of the support body.

US Pat. No. 10,942,194

AUTOMATIC ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer comprising:a plurality of analysis sections for sample analysis, each comprising a reaction disk with a reaction tank, each reaction tank being configured to exchange water supplied from outside of the automatic analyzer to fill each reaction tank;
a display device; and
a processor executing a program for controlling operations of the analysis sections,
wherein the processor is programmed to:
control the display device to display a maintenance execution instruction screen for designating whether to execute time difference maintenance using water for the plurality of analysis sections or to execute simultaneous maintenance for at least two of the analysis sections; and
upon receiving both a designation to execute the time difference maintenance and a designation to execute the simultaneous maintenance for the at least two of the analysis section, execute the simultaneous maintenance using water for the at least two analysis sections and switch to the time difference maintenance to sequentially execute the maintenance using water for remaining ones of the analysis sections other than the at least two of the analysis sections for which simultaneous maintenance is executed.

US Pat. No. 10,943,762

INSPECTION SYSTEM, IMAGE PROCESSING DEVICE AND INSPECTION METHOD

HITACHI HIGH-TECH CORPORA...

1. An inspection system, comprising:a microscope that scans a sample with a beam that is an incident electron beam; and
an image processing device that controls the microscope,
wherein the image processing device performs:
an acquisition process of acquiring a plurality of images relating to brightness based on an amount of a signal electron detected from the sample as a result of controlling the microscope according to a plurality of image acquisition conditions and irradiating the sample with the incident electron beam, the plurality of image acquisition conditions being multiple combinations of different irradiation amounts of the beam per unit length;
a first generation process of generating a plurality of actually measured profiles that show a relationship between an irradiation position of the incident electron beam in the sample and the brightness of the sample, based on the plurality of images acquired in the acquisition process; and
an output process of outputting an electrical contact characteristic of the sample based on the plurality of actually measured profiles generated in the first generation process.

US Pat. No. 10,930,468

CHARGED PARTICLE BEAM APPARATUS USING FOCUS EVALUATION VALUES FOR PATTERN LENGTH MEASUREMENT

Hitachi High-Tech Corpora...

1. A charged particle beam apparatus including a lens which focuses a charged particle beam emitted from a charged particle source on a sample, the apparatus comprising:a control device which controls the lens,
wherein the control device calculates focus evaluation values of a plurality of images which are obtained under different focus conditions by the lens,
wherein the control device calculates a maximum value among the calculated focus evaluation values,
wherein the control device divides, by a predetermined number of frames necessary for generating an integrated image, a variation width of a focusing position of the charged particle beam which is set based on the maximum value of the focus evaluation values,
wherein the control device captures a plurality of one frame images according to a setting of a lens condition corresponding to the divided range,
wherein the control device calculates the focus evaluation values of the plurality of one frame images,
wherein the control device performs a weighting operation on the plurality of one frame images based on the focus evaluation values of the plurality of one frame images,
wherein the control device generates the integrated image by integrating the weighted images, and
wherein the control device measures a size of a pattern included in the integrated image.

US Pat. No. 10,930,476

PLASMA PROCESSING DEVICE

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally and a plasma is generated using process gas supplied therein, and a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, the sample being processed using the plasma, the plasma processing apparatus comprising:a dielectric film which is disposed on a metallic base which configure the sample stage, the dielectric film including a conductive film disposed internally therein;
a first power supply configured to supply high-frequency power to the conductive film;
at least one aggregation of a plurality of Peltier elements which are housed inside a space in the base and connected in series, each of the plurality of Peltier elements being configured to have both heat generating and cooling functions, and being equipped in contact with a ceiling of the space and separated from the conductive film by the base and the dielectric film; and
one or more second power supplies, each of the one or more second power supplies being connected to each of the at least one aggregation of the plurality of Peltier elements via a polarity switch and being configured to supply electric power to drive the plurality of Peltier elements to have either of the heat generation or cooling functions; and
a plurality of current bypass relays, each of which are connected in parallel to the plurality of Peltier elements in each of the at least one aggregation, each of the current bypass relays being configured to adjust amounts of current of the electric power provided from the one or more second power supplies,
wherein the base surrounds the Peltier elements and the base is connected to ground potential.

US Pat. No. 10,923,315

CHARGED PARTICLE BEAM APPARATUS, AND METHOD OF ADJUSTING CHARGED PARTICLE BEAM APPARATUS

Hitachi High-Tech Corpora...

1. A charged particle beam apparatus comprising:an irradiation optical system including a lens which is configured to converge charged particle beams emitted from a charged particle source;
an imaging optical system which is configured to image charged particles obtained by irradiating a sample with the charged particle beams on an imaging element; and
a control apparatus which is configured to control the lens, wherein
the control apparatus is configured to use a first image obtained by orbital reversal of the charged particle beam on the trajectory thereof in the vicinity of the wafer surface, and a second image obtained by making the charged particle beam reach the wafer, and to evaluate for each lens condition a size of a brightness area in the second image reduced by a certain amount with respect to brightness of the first image, and to select a lens condition under which the size information fulfills a designated condition.

US Pat. No. 10,921,296

SEPARATION COLUMN CONNECTION DEVICE, CONNECTION METHOD, AND ANALYSIS SYSTEM

HITACHI HIGH-TECH CORPORA...

1. A separation column connecting device comprising:a column holder for retaining a separation column;
a first fitting holder carrying a first fitting which includes a seal portion to be connected to an upstream seal portion of the separation column and is connected with an upstream pipe;
a second fitting holder carrying a second fitting which includes a seal portion to be connected to a downstream seal portion of the separation column and is connected with a downstream pipe;
a body member to which either one of the first fitting holder and the second fitting holder is fixed;
a driver for moving, relative to the body member, the first fitting holder or the second fitting holder that is not fixed to the body member and moving the column holder relative to the body member;
a guide for guiding the column holder in a direction of movement driven by the driver; and
an elastic body disposed between the column holder and the second fitting holder.

US Pat. No. 10,900,011

TEST APPARATUS

Hitachi High-Tech Corpora...

1. A test apparatus which is configured to perform an identification test or an antimicrobial susceptibility test of bacteria or fungi, the test apparatus comprising:a temperature control unit that is configured to control a set temperature of a culture plate having a plurality of wells and retaining a culture liquid which contains the bacteria or the fungi in each well;
a microscopic observation optical system including a light source that outputs light and an objective lens having a magnification that allows observation of whether the bacteria or fungi is divided and through which the light passes after passing through the culture plate;
a transportation mechanism that is configured to transport the culture plate between the temperature control unit and the microscopic observation optical system, and
a processor to process an image from the microscopic observation optical system,
wherein the microscopic observation optical system is configured to acquire a microscopic observation image of the bacteria or the fungi in the culture liquid included in each of the wells in the culture plate, and the processor is configured to perform image processing of edge detection and binarization on the image, to extract feature values including a number of bacteria or fungi present in the image, areas of the bacteria or fungi present in the image, an average area, a circularity, an aspect ratio, and a perimeter length of bacterium or fungus from the image after image processing, and to perform comparison at least one of a feature value to that of images in a database.

US Pat. No. 10,903,036

CHARGED-PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged-particle beam device equipped with an electrostatic chuck that chucks a sample to be irradiated with a charged particle beam, the charged-particle beam device comprising:a sample chucking surface of the electrostatic chuck including a first region in which a plurality of projections are formed and a second region in which the number of projections per unit area is larger than that of the first region;
an electrometer that measures electric potential of the electrostatic chuck; and
a control device that measures electric potential of the second region using the electrometer.

US Pat. No. 10,903,037

CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:an electron gun having an electron source, an extraction electrode to which a voltage used for extracting electrons from the electron source is applied, and an acceleration electrode to which a voltage used for accelerating the electrons extracted from the electron source is applied;
a first heating unit that heats the extraction electrode; and
a second heating unit that heats the acceleration electrode; and
a heat insulating portion that is provided between the acceleration electrode and a cylindrical body that houses the electron source, the extraction electrode and the acceleration electrode, and prevents hear transfer from the acceleration electrode to the cylindrical body,
wherein the heat insulating portion is a titanium alloy.

US Pat. No. 10,903,041

PATTERN MEASURING METHOD, PATTERN MEASURING TOOL AND COMPUTER READABLE MEDIUM

Hitachi High-Tech Corpora...

1. A pattern measuring method, comprising:receiving a signal obtained by irradiating a wafer with a beam using a pattern measuring tool;
measuring a width between a first pattern and another pattern formed on the wafer and identifying a value corresponding to a signal amount between the first pattern and the other pattern, based on reception of the signal; and
calculating height information from a portion between the first pattern and the other pattern to an upper portion of the pattern based on the measured width between the first pattern and the other pattern and the value corresponding to the signal amount between the first pattern and the other pattern,
wherein the height information is calculated based on
H =L·sin?/2tan ?
H: the height information
L: the width between the first pattern and the other pattern
?: a value that changes according to a shape and a position of a detector
?: the value corresponding to the signal amount between the first pattern and the other pattern.

US Pat. No. 10,892,158

MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND A PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A manufacturing method of a semiconductor device comprising:a first step for performing plasma processing on a semiconductor substrate including at least a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and
a second step for performing plasma processing on the semiconductor substrate to segregate silicon on the surface of the exposed silicon germanium layer under a second condition,
wherein the first condition is a condition under which the silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched,
the second condition is a condition under which hydrogen plasma processing is performed, and
the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

US Pat. No. 10,879,033

STAGE APPARATUS, AND CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A stage apparatus comprising:an upper stage arranged to move an upper table on which a sample is mounted in a first direction;
a middle stage arranged to move a middle table on which the upper stage is mounted in a second direction orthogonal to the first direction; and
a lower stage arranged to move a lower table on which the middle stage is mounted in a third direction orthogonal to the first direction and the second direction,
wherein the upper table and the middle table use a material having a smaller thermal expansion coefficient than in a material of the lower table, the material of the upper table and the middle table being a same material, and
the lower table uses a material having a higher thermal conductivity than in the material of the upper table and the middle table.

US Pat. No. 10,879,037

CHARGED PARTICLE BEAM DEVICE WITH DISTANCE SETTING BETWEEN IRRADIATION REGIONS IN A SCAN LINE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:a charged particle beam source;
a sample table on which a sample is placed;
a charged particle beam optical system that accelerates and pulsates a charged particle beam emitted from the charged particle beam source, and irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV while scanning the charged particle beam; and
a controller that controls the charged particle beam optical system based on a split distance set as a same pixel distance between successive irradiation regions in a scanning direction for one scanning line of the charged particle beam on the sample, based on a measurement object comprising a surface or an under layer of the sample, so as to irradiate the charged particle beam to the sample without causing damage to the sample,
wherein the split distance is set based on an electrostatic capacitance from a previous irradiation of the sample by the charged particle beam, and
wherein the split distance is set to a plurality of values, each said value being a same value within each of a plurality of scanning lines, and each said value being different between each different scanning line of said plurality of scanning lines.

US Pat. No. 10,872,744

CHARGED PARTICLE BEAM APPARATUS

Hitachi High-Tech Corpora...

1. A charged particle beam apparatus comprising:a stage configured to place a sample thereon and to move the sample inside a sample chamber;
a column of a scanning electron microscope configured to irradiate a charged particle beam on the sample by outputting the charged particle beam in a direction perpendicular to an upper surface of the stage;
a first image capturing apparatus configured to observe a surface of the sample irradiated with the charged particle beam from an angle different from that of the column and obtain an optical image of the sample; and
a control unit configured to, when observing the sample via the first image capturing apparatus, separate the sample from the column by moving the sample in a vertical direction away from the column and, subsequently, to tilt the sample through the stage to face toward the first image capturing apparatus;
wherein the control unit corrects a magnification and coordinates of the first image capturing apparatus according to a position of the sample when observing the sample by using the first image capturing apparatus.

US Pat. No. 10,872,774

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber in which a sample is subjected to plasma processing;
a radio frequency power supply supplying radio frequency power that generates plasma;
a sample stage on which the sample is placed;
an ultraviolet light source applying an ultraviolet ray; and
a controller configured to control the ultraviolet light source such that before the radio frequency power is supplied into the processing chamber, a pulse-modulated ultraviolet ray is applied into the processing chamber,
wherein the sample stage includes an electrode to which a direct current voltage is applied, the sample being electrostatically chucked by the direct current voltage, and
wherein the controller is configured to control the ultraviolet light source each that before the direct current voltage is applied to the electrode, the pulse-modulated ultraviolet ray is applied into the process chamber.

US Pat. No. 10,858,621

CELL DISPERSION MEASUREMENT MECHANISM, AND CELL SUBCULTURE SYSTEM UTILIZING SAME

Hitachi High-Tech Corpora...

1. A cell measurement apparatus comprising:a flow path in which a cell suspension flows;
liquid driving means which sends the cell suspension in the flow path; and
measurement means which measures over time a number or concentration of cells and a degree of dispersion of cells contained in the cell suspension flowing in the flow path while mixing the cell suspension using the liquid driving means; and
dispersion means which disperses cell masses contained in the cell suspension;
wherein the measurement means measures a scattered light intensity or a transmittance of light from a light source; and
wherein the flow path is a circular flow path having a circular shape, in which the liquid driving means, the measurement means and the dispersion means are disposed.

US Pat. No. 10,840,059

CHARGED PARTICLE RADIATION DEVICE

Hitachi High-Tech Corpora...

1. A charged particle radiation device comprising:a sample chamber;
a charged particle optical system mounted in the sample chamber;
an image processing device for processing a signal detected by the charged particle optical system;
a sensor for measuring a vibration amount of the sample chamber;
a driving mechanism for finely vibrating the sample chamber; and
a control device for controlling the driving mechanism,
wherein the control device adjusts a control characteristic of the driving mechanism using image information obtained from the charged particle optical system and vibration information of the sample chamber,
wherein the control device extracts an image shake amount from the image and calculates a vibration frequency of the sample chamber using the image shake amount, and
wherein the control device calculates an allowance value of a sample chamber vibration amount from the image shake amount of the image.

US Pat. No. 10,840,060

SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD

HITACHI HIGH-TECH CORPORA...

9. A sample observation method in which an image of a scanned region is formed by scanning a two-dimensional region on a sample with the electron beam, comprising the steps of:determining a probe current and a scan speed of scanning individual single lines by said electron beam such that a charge amount injected per unit of length in a direction of the line scan on the sample by scanning of said electron beam, for each individual single line scanned by the electron beam on the sample, is a predetermined value or less; and
scanning said sample in individual single lines by the electron beam based on the determined probe current and scan speed,
wherein the probe current and the scan speed of scanning said individual single lines by said electron beam is based on one or more electric characteristics of said sample derived from said images including a charging relaxation time constant of said sample calculated based on a temporal change of an intensity of secondary charged particles emitted from said sample by radiating the electron beam to said sample and also is based on previously stored limitation conditions of the scanning electron microscope.

US Pat. No. 10,840,070

ION BEAM DEVICE AND CLEANING METHOD FOR GAS FIELD ION SOURCE

Hitachi High-Tech Corpora...

1. An ion beam device comprising a gas field ion source which includes: an emitter electrode having a needle-shaped tip; an extraction electrode having an opening at a position spaced apart from the tip of the emitter electrode; and a chamber encapsulating the emitter electrode therein,wherein the gas field ion source includes:
an ionizable gas introduction path for introducing an ionizable gas into the chamber in a state where a voltage equal to or more than a beam generating voltage is applied to the emitter electrode; and
a cleaning gas introduction path for introducing a cleaning gas into the chamber in either a state where a voltage less than the beam generating voltage is applied to the emitter electrode or a state where no voltage is applied to the emitter electrode, and
wherein a pressure of the chamber with the cleaning gas introduced therein is higher than a pressure of the chamber when the ionizable gas is introduced therein.

US Pat. No. 10,828,861

GLASS/RESIN COMPOSITE STRUCTURE AND METHOD FOR MANUFACTURING SAME

HITACHI HIGH-TECH CORPORA...

1. A flow cell for a liquid analyzer, comprising:a glass substrate,
a hydrolyzed silicon compound modifying a glass substrate surface of the glass substrate, and
a resin substrate,
wherein the glass substrate surface is in contact with a resin substrate surface of the resin substrate, and the glass substrate is adhered to the resin substrate via chemical bonding and anchor effects via the hydrolyzed silicon compound, and
wherein the resin substrate is polyether ether ketone resin, polyphenylene sulfide resin, or polyamide resin.

US Pat. No. 10,832,976

CHARGED PARTICLE BEAM DEVICE AND OPTICAL EXAMINATION DEVICE

Hitachi High-Tech Corpora...

1. A charged particle beam device comprising:a stage;
a projection optical system that projects a first pattern on one side and a second pattern on another side across at least a part of a scanning area of a charged particle beam on a wafer placed on the stage, the first pattern and the second pattern being projected from an oblique direction with respect to a surface of the wafer; and
an imaging device that obtains images of the first pattern and the second pattern,
wherein at least one of the images of the first pattern and the second pattern is chosen to measure a height of the wafer,
wherein the projection optical system further comprises a plurality of first slits that projects the first pattern via a first slit group, and a plurality of second slits that projects the second pattern via a second slit group, and
the plurality of first slits are disposed at a first side with respect to an optical axis of the projection optical system, and the plurality of the second slits are disposed at a second side with respect to the optical axis of the projection optical system.

US Pat. No. 10,833,255

METHOD FOR MANUFACTURING MAGNETIC TUNNEL JUNCTION ELEMENT, AND INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A method for manufacturing a magnetic tunnel junction element, comprising:forming a multilayer film which has a first magnetic film including at least one of Co, Ni, and Fe, and an oxidation film including at least one of Mg, Zn, and Al, of which a thickness of the first magnetic film is 2 nm or less, and of which the first magnetic film and the oxidation film have an interface in a film surface direction;
forming a mask layer that is patterned on the multilayer film; and
performing etching with respect to the multilayer film on which the mask layer is formed, by using a mixed gas of a hydrogen gas and a nitrogen gas as a reaction gas,
wherein a ratio of a flow rate of the hydrogen gas to a flow rate of the mixed gas is 50% or less.

US Pat. No. 10,830,706

DEFECT INSPECTION APPARATUS AND DEFECT INSPECTION METHOD

HITACHI HIGH-TECH CORPORA...

1. A defect inspection apparatus comprising:an illumination unit configured to illuminate an inspection object region of a sample with light emitted from a light source;
a detection unit configured to detect scattered light in a plurality of directions, which is generated from the inspection object region;
a photoelectric conversion unit configured to convert the scattered light detected by the detection unit into an electrical signal;
a signal processing unit configured to process the electrical signal converted by the photoelectric conversion unit to detect a defect in the sample, wherein
the detection unit includes
an imaging unit configured to divide an aperture and form a plurality of images on the photoelectric conversion unit,
an objective lens configured to converge the scattered light generated from the inspection object region;
an imaging lens configured to form an image of the light converged by the objective lens at a predetermined position;
a condenser lens configured to converge the image formed by the imaging lens;
a lens array including a plurality of arrays and configured to divide an image converged by the condenser lens by the plurality of arrays to form the plurality of images on the photoelectric conversion unit; and,
the signal processing unit is configured to synthesize electrical signals corresponding to the plurality of formed images to detect a defect in the sample.
US Pat. No. 10,830,763

COMPONENT ANALYSIS DEVICE, DRUG COMPONENT ANALYSIS DEVICE, COMPONENT ANALYSIS METHOD, AND DRUG COMPONENT ANALYSIS METHOD

HITACHI HIGH-TECH CORPORA...

1. A component analysis method, comprising:providing a plurality of containers including a first container and a second container, wherein the first container comprises contents of liver cell tissue comprising a 3D culture and a first solution containing a first substance that releases adhesion between multiple cells that form the liver cell tissue and that allows a bile duct formed in the liver cell tissue to collapse, and a substance that comprises trypsin and EDTA for cutting the 3D culture liver cell tissue into single sells, wherein a temperature in the first container is maintained at 37° C., such that a fraction discharged from cells into a blood vessel side includes a fraction via passive diffusion and a fraction via a transporter, and
the second container comprises contents of liver cell tissue comprising a 3D culture and a buffer solution;
contacting the contents of the first container and the contents of the second container with a component;
measuring an amount of the component discharged from the liver cell tissue in the first container into the first solution;
measuring an amount of the component discharged from the liver cell tissue in the second container into the buffer solution in the second container; and
measuring an amount of the component to be discharged via a bile duct in the liver cell tissue.

US Pat. No. 10,832,886

BEAM IRRADIATION DEVICE

Hitachi High-Tech Corpora...

1. A beam irradiation device comprising:a beam source configured to emit a plurality of beams;
an objective lens configured to focus a beam on a sample;
a first lens arranged such that a lens main surface is positioned at an object point of the objective lens and configured to deflect a plurality of incident beams toward an intersection point of a main surface of the objective lens and an optical axis;
a second lens arranged closer to a beam source side than the first lens and configured to focus the plurality of beams on a main surface of the first lens; and
a third lens arranged closer to the beam source side than the second lens and configured to deflect the plurality of beams toward an intersection point of a main surface of the second lens and the optical axis.

US Pat. No. 10,832,889

CHARGED PARTICLE BEAM DEVICE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam device comprising:an ion source adapted to generate an ion beam having an ion beam center;
a sample stage on which a sample is placed for section milling a section surface of the sample, using the ion beam;
a shielding plate that is disposed on the sample stage between the ion source and the sample such that a portion protrusion amount of the sample is exposed to the ion beam for section milling of the protrusion amount of the sample, when that protrusion amount of the sample extends beyond an end portion of the shielding plate and is seen from the ion source;
a sample movement mechanism and a shielding plate movement mechanism, whereby the sample and the shielding plate are movable independently with respect to each other, the sample movement mechanism and the shielding plate movement mechanism including a fine movement control unit that finely moves the shielding plate respective to the sample stand such that an exposure amount of the sample can be finely adjusted, as viewed from the ion source, in accordance with an accelerator voltage of the ion beam;
a sample stage tilt unit, which sample stage tilt unit tilts the sample and the shielding plate about a tilt angle ?, around a tilt axis, which tilt axis is orthogonal to, and which intersects the ion beam from the ion source at a point of contact between the protrusion amount of the sample and the end portion of the shielding plate, which tilt axis extends in a direction whereby, on rotation of the sample stage about the tilt axis, the end portion of the shielding plate, from which end portion of the shielding plate the protrusion amount of the sample extends, masks a part of the protrusion amount of the sample extending beyond the end portion of the shielding plate, with respect to the ion beam;
a swing unit that swings the sample and the shielding plate around a swing axis, which swing axis is orthogonal to the tilt axis and intersects the ion beam; and
whereby, the provision of the tilt axis at the end portion of the shielding plate using the fine movement control unit allows a change in the tilt angle ?, to change an angle of the ion beam entering the sample, to form a milling surface in the sample which milling surface is perpendicular to the shielding plate.

US Pat. No. 10,825,657

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber which is disposed inside a vacuum container and in which a plasma is formed;
a sample table which is disposed in the processing chamber and on which a sample to be processed using the plasma is placed;
two electrodes which have a film shape, configure an upper surface of the sample table, are disposed within a film, on which the sample is placed and which is made of a dielectric, and to which power for attracting the sample is supplied so that different polarities are formed;
a coiled portion in which two power supply lines, which are disposed on a power supply path between the two electrodes and each power supply and connected to each of the two electrodes, are wound in parallel around the same axis; and
a bypass line which connects the two power supply lines between the coiled portion and the two electrodes and has a capacitor.

US Pat. No. 10,825,664

WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A method of processing a wafer in which a process target wafer is placed on a sample stage disposed in a processing chamber inside a vacuum chamber, the method comprising:supplying an electric field from a high-frequency power supply into the vacuum chamber to form plasma using processing gas introduced into the vacuum chamber from a processing gas supply unit;
while causing a refrigerant supplied from a refrigerant supply device to a refrigerant flow passage disposed inside the sample stage to circulate, holding the wafer on an electrostatic chuck disposed on an upper portion of the sample stage and including a central portion formed in a concave shape with respect to a peripheral portion thereof to attract the wafer by an electrostatic force;
while supplying a plurality of heat transfer gases having thermal conductivity from the heat transfer gas supply unit between the wafer and the central portion formed in the concave shape of the electrostatic chuck unit from a plurality of openings arranged on a top surface of the electrostatic chuck unit, processing the wafer according to a plurality of processes comprising a reaction step and a desorption step; and
in the plurality of processes, controlling the heat transfer gas supply unit to adjust the amount or pressure of at least one of the plurality of heat transfer gases introduced from the opening in a state in which the wafer is held above the electrostatic chuck unit in a non-contact manner to adjust the height of or a pressure in a gap between the wafer and the top surface of the electrostatic chuck unit to a predetermined value of in the plurality of processes, thereby processing the wafer, while controlling the temperature of the wafer depending on the plurality of processes for processing the wafer,
wherein each of said plurality of heat transfer gases has a respectively different heat transfer rate.

US Pat. No. 10,825,700

PLASMA PROCESSING APPARATUS AND METHOD FOR RELEASING SAMPLE

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus, comprising:a processing chamber in which a sample is subjected to a plasma processing; a radio frequency power source which supplies radio frequency power to generate plasma;
a sample stage, which includes an electrode to electrostatically adsorb the sample, on which the sample is placed;
a DC (Direct Current) power source which applies a DC voltage to the electrode; and
a controller configured to:
change the radio frequency power from a first radio frequency power to a second radio frequency power after the plasma processing of the sample;
change the DC voltage from a value at the time of the plasma processing to a predetermined value while the second radio frequency power is supplied;
stop the supply of the second radio frequency power while the DC voltage is being applied to the electrode at the predetermined value;
change the DC voltage from the predetermined value to a value of 0V a predetermined amount of time after the supplying of the second radio frequency power is stopped; and
release the sample subjected to the plasma processing from the sample stage after the DC voltage is changed to the value of 0V,
wherein the second radio frequency power is a radio frequency power to generate plasma to release the sample electrostatically absorbed to the sample stage from the sample stage, and
wherein the predetermined value is a value defined such that a potential of the electrode corresponds to a potential of the sample when the DC voltage is changed to the predetermined value, and
wherein the predetermined time is a time when an afterglow discharge disappears after the supply of the second radio frequency power is stopped.

US Pat. No. 10,815,524

NUCLEIC ACID ANALYZER

Hitachi High-Tech Corpora...

1. A nucleic acid analyzer comprising:a carousel drivable around a rotary axis;
a plurality of holders disposed along an outer circumference of the carousel, each of the holders configured to hold a reaction vessel containing a sample obtained by mixing a reagent and a nucleic acid, each of the holders including an irradiation window and a detection window;
a Peltier device aligned radially with each of the holders and the carousel, each Peltier device sandwiched radially between a corresponding one of the holders and the carousel to control a temperature of said corresponding one of the holders;
a temperature sensor mounted to each of the holders;
a photometer disposed at an outer circumference of the carousel to supply excitation light to the irradiation window of each holder and to receive fluorescent light from the detection window;
each Peltier device, together with one of the holders and the temperature sensor mounted to said one of the holders, forming a temperature control unit, which controls a temperature of the sample;
an optical noise reducing shielding plate covering the carousel and the holders; and
a temperature controller, which controls the temperature control unit,
wherein during analysis of said sample, at sensed temperatures above a threshold value, the analyzer operates so that a curve of temperature values for duration time continuously ramps up the temperature values to a first target overshoot temperature, retains the first target overshoot temperature for a predetermined duration after reaching the first target overshoot temperature, then continuously ramps down the temperature values from the first target overshoot temperature to a reaction mixture target temperature, and thereafter maintains the reaction mixture target temperature, and so that, at sensed temperatures that are not above the threshold value, a curve of temperature values for duration time continuously ramps up the temperature values to a second target overshoot temperature lower than the first target overshoot temperature, and then continuously ramps down the temperature values from the second target overshoot temperature to the reaction mixture target temperature without retaining the second target overshoot temperature, and thereafter maintains the reaction mixture target temperature.

US Pat. No. 10,816,564

SAMPLE TEST AUTOMATION SYSTEM

HITACHI HIGH-TECH CORPORA...

1. A sample test automation system for subjecting samples to various processes, the sample test automation system comprising:an introducing unit configured to hold a plurality of sample trays, each having one or more samples which are to be processed in the sample test automation system held in one or more sample containers placed thereon, wherein the introducing unit has a first sample transfer arm configured to separately transfer the sample containers between the sample trays held therein and a plurality of respective sample holders;
a storage unit configured to hold a plurality of sample trays each having one or more samples which have been processed in the sample test automation system held in one or more sample containers placed on each of the sample trays, wherein the storage unit has a second sample transfer arm configured to separately transfer the sample containers between the respective sample holders and the sample trays held therein;
a conveying unit configured to convey the sample containers in the sample holders to and from the introducing unit, destinations corresponding to the various processes, and the storage unit; and
an operation control unit programmed to control the introducing unit, the storage unit and the conveying unit,
wherein a plurality of tags including information for distinguishing the individual sample trays from the other sample trays are attached to the sample trays,
wherein the introducing unit includes a plurality of tag readers and a plurality of tray storage units each having a shape to hold one of the sample trays and having one of the tag readers disposed therein, and each of the tag readers is configured to read one of the tags attached to one of the sample trays when the one of the sample trays is placed on a corresponding one of the tray storage units,
wherein the storage unit includes a plurality of tag readers and a plurality of tray storage units each having a shape to hold one of the sample trays and having one of the tag readers disposed therein, and each of the tag readers is configured to read one of the tags attached to one of the sample trays when the one of the sample trays is placed in a corresponding one of the tray storage units and when the one of the sample trays is removed from a corresponding one of the tray storage units,
wherein the operation control unit is programmed to control the second sample transfer arm to transfer the ones of the sample containers in the sample holders from the conveying unit to the sample trays in the storage unit and cause information of each of the samples in the sample containers placed on a same one of the sample trays in the storage unit to correspond to information in the tag of the same one of the sample trays in the storage unit,
wherein, when the operation control unit receives an order for an add-on test or an additional test item for one of the samples, the operation control unit is programmed to determine the one of the samples is placed on one of the sample trays which was removed from the storage unit based on reading the tags of the sample trays held in the tray storage units of the storage unit and display a notification to place the one of the sample trays in the introducing unit, and
wherein, when the one of the sample trays corresponding to the notification is placed in the introducing unit, the operation control unit is programmed to acquire the information of the read tag of the one of the sample trays placed on one of the tray storage units and control the first sample transfer arm to transfer the sample container holding the one of the samples corresponding to the order from the one of the sample trays to one of the sample holders based on the acquired information of the read tag.

US Pat. No. 10,816,332

PATTERN MEASUREMENT DEVICE AND PATTERN MEASUREMENT METHOD

Hitachi High-Tech Corpora...

1. A pattern measurement device comprising a computation device for measuring a dimension of a pattern formed on a sample based on a signal obtained by a charged particle beam device, whereinthe computation device obtains a deviation between a first part of the pattern and a second part of the pattern having a different height from the first part and a dimension value of the pattern from a detection signal obtained based on scanning of a charged particle beam on the sample, and corrects the dimension value of the pattern using the deviation obtained from the detection signal and relationship information indicating a relationship between the dimension of the pattern and the deviation.

US Pat. No. 10,816,333

PATTERN MEASUREMENT METHOD AND PATTERN MEASUREMENT DEVICE

Hitachi High-Tech Corpora...

1. A pattern measurement method that acquires information on a pattern formed on a sample on the basis of scanning of a charged particle beam, the method comprising:forming a first inclined plane by irradiating an ion beam to a sample area including at least a first pattern and a second pattern different from the first pattern;
acquiring a detection signal by scanning the charged particle beam to an area including the first pattern and the second pattern after the inclined plane is formed;
obtaining an x coordinate and a y coordinate of each position of edges of the first pattern and the second pattern on the inclined plane on the basis of the detection signal and pitch information on the first pattern and the second pattern; and
obtaining a z coordinate of each position on the basis of any one of angle information on the inclined plane, the x coordinate, and the y coordinate.

US Pat. No. 10,816,484

FLAW INSPECTION DEVICE AND FLAW INSPECTION METHOD

HITACHI HIGH-TECH CORPORA...

1. A defect inspection device for inspecting a defect of an inspection target, comprising:a feature amount calculator that calculates a feature amount of a defect candidate of the inspection target;
a storage device that stores extraction condition data describing an initial value of a con the defect of the inspection target;
a defect determination processor that compares the feature amount with the condition to extract the defect of the inspection target;
a display that outputs information representing the defect extracted by the defect determination processor; and
an interface that receives a designation input for designating whether the defect extracted by the defect determination processor is an actual report or a false report,
wherein the defect determination processor receives a plurality of reference values though the interface and calculates the condition which an evaluation value calculated using the number of actual reports, the number of false reports, and the reference values becomes optimum for each of the reference values,
wherein the defect determination processor extracts the defect of the inspection target by using the condition calculated for each of the reference values, and
wherein the display outputs the condition calculated by the defect determination processor for each of the reference values and outputs the defects extracted using the conditions calculated for each of the reference values, and outputs information representing the extracted defect by using the condition calculated by the defect determination processor for each of the reference values.

US Pat. No. 10,810,733

DEFECT CLASSIFICATION APPARATUS AND DEFECT CLASSIFICATION METHOD

HITACHI HIGH-TECH CORPORA...

1. A defect classification apparatus comprising:an image storage unit for storing images of a sample;
a defect class storage unit for storing types of defects included in the images of the sample;
an image processing unit for processing the images of the sample and generating a plurality of images; and
a classifier learning unit for learning a defect classifier using the images of the sample and the plurality of images, wherein
the image processing unit performs any of a rotation process, a horizontal inversion process or a class unchangeable deformation process, which is performed while the type of a defect image is unchanged or performs a combination thereof to the images of the sample, and generates the plurality of images, and
the channel information accompanying the plurality of generated images is renewed according to the rotation process or the inversion process.
US Pat. No. 10,810,239

SEQUENCE DATA ANALYZER, DNA ANALYSIS SYSTEM AND SEQUENCE DATA ANALYSIS METHOD

Hitachi High-Tech Corpora...

1. A sequence data analyzer comprising:a read dictionary preparation unit configured to prepare a read sequence dictionary based on billions of sample DNA fragments;
a temporary storage unit configured to temporarily store billions of strings prepared by the read dictionary preparation unit and used for preparing the read sequence dictionary, each of the strings consisting of a pair of a left sequence and a right sequence obtained by sequencing each sample DNA fragment from both ends thereof, a concatenation character connecting the left sequence and the right sequence without a sample DNA fragment identifier to obtain a concatenation string, and a terminal character connected to the concatenation string;
a query retrieval unit configured to search the read sequence dictionary for a hit position being a base character coordinate at which a query sequence appears, the query sequence being generated from a base string of a genome DNA;
a sample reconstruction unit configured to extract as a sample sequence a string having the hit position by searching the read sequence dictionary from the hit position up to a terminal character positioned around the hit position, to search the sample sequence for a concatenation character positioned around the hit position from the hit position up to the terminal character, and to extract as a mate sequence either one of the left sequence and the right sequence of the sample sequence, where the hit position does not exist; and
a mapping unit configured to search the genome DNA for a base character coordinate of the base string in which the mate sequence appears.

US Pat. No. 10,802,017

BIOANALYSIS DEVICE AND BIOMOLECULE ANALYZER

HITACHI HIGH-TECH CORPORA...

1. A biomolecule analyzing device comprising:a solution of magnetic fine particles, some of which have a target antigen molecule or target nucleic acid molecule captured thereon by an antibody and labelled with a fluorescent dye and some of which do not have the target antigen molecule or target nucleic acid molecule captured thereon, the magnetic fine particles having a particle size less than or equal to 300 nm;
a solution vessel having a highly wettable hydrophilic cover substrate opposite a highly wettable hydrophilic supporting substrate which confine the solution in the solution vessel, the solution vessel defining a chamber for the solution by providing the supporting substrate within the chamber having a shape and area corresponding to the shape and area of the cover substrate;
a magnetic field generator configured to generate a magnetic field with a surface magnetic flux density of at least 0.1 Tesla (T) and that is disposed below the supporting substrate, wherein the magnetic field generator is further configured to switche the magnetic field on and off, or switche strengths of the magnetic field including at least one strength of at least 0.1 T to immobilize the magnetic fine particles of the solution onto and directly contacting a surface of the supporting substrate;
an excitation light source to irradiate the fluorescent dye bound to the magnetic fine particles; and
a camera to acquire an image of bright spots from light emitted from the fluorescent dye bound to the magnetic fine particles,
wherein a width between the supporting and cover substrates is 50 ?m or less, and
wherein a measured bright spot count of the bright spots obtained from the image is greater than 80% of a theoretical bright spot count.

US Pat. No. 10,804,067

CHARGED PARTICLE BEAM APPARATUS COMPRISING A CONTROLLER TO SET CONTROL PARAMETERS BASED ON MOVEMENT OF THE SAMPLE STAGE

HITACHI HIGH-TECH CORPORA...

1. A charged particle beam apparatus comprising:an XY stage on which a sample is placed;
a charged particle beam source which irradiates the sample with a charged particle beam;
a detector which detects charged particles emitted from the sample upon the irradiation with the charged particle beam;
an image generator which generates an SEM image of the sample based on a detection signal output by the detector; and
a controller configured to set control parameters based on a movement starting point and a movement ending point of the XY stage and control a driving unit for moving the XY stage according to the control parameters.

US Pat. No. 10,804,080

PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus for processing a semiconductor wafer using plasma in a processing chamber, comprising:a vacuum vessel including, in the interior of the vacuum vessel, the processing chamber in which the plasma is generated;
a sample stage disposed in the lower portion of the processing chamber and including a placing face on which a semiconductor wafer to be processed is placed, the sample stage being supplied first high frequency electric power from a high frequency power source while the plasma is generated;
a power source configured to form an electric field for plasma generation by using gas supplied into the processing chamber;
a base material constituted by a conductive material and an insulating plate disposed below the base material both of which have cylindrical shapes and configure the sample stage;
a ring-shaped member constituted by a dielectric material and disposed above the base material in the outer periphery of the placing face of the sample stage to cover the surface of the outer periphery of the sample stage;
a ring-shaped electrode which is disposed between the ring-shaped member and the base material, and to which second high frequency electric power is supplied; and
an electric power supply connector being disposed in a through hole arranged inside the sample stage including at least the base material and the insulating plate below the ring-shaped electrode, and configuring a path for supplying the second high frequency electric power to the ring-shaped electrode,
wherein the electric power supply connector includes a portion disposed in the interior of a tubular insulating member, the tubular insulating member being constituted by an insulative material and disposed in the through hole,
the portion extending from an upper end portion of the through hole toward a lower space of a bottom surface of the sample stage through a bottom end opening of the through hole on the bottom surface of the sample stage wherein in the through hole an atmospheric pressure is maintained, and the portion including a cylindrical upper end member a position of which is fixed with respect to the base material inside the tubular insulating member, a lower end member which extends from the inside space of the through hole to the lower space of the sample stage, and a resilient conductor which is disposed between the cylindrical upper end member and the lower end member and is electrically connected with both and is biased in an up-down direction, and is expanded and contracted, the portion being configured to increase and decrease a length between the cylindrical upper end member and the lower end member through the bottom end opening by the resilient conductor's expansion and contraction,
wherein the apparatus further comprises a seal member disposed between an outer cylindrical side wall surface of the cylindrical upper end member and an inner cylindrical side wall surface of the tubular insulating member and hermetically sealing an upper region of an interior space of the insulative tubular member from a lower region of said interior space of the insulative tubular member, said lower region communicates with the lower space of the sample stage that is maintained in the atmospheric pressure.

US Pat. No. 10,804,084

VACUUM APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A vacuum apparatus, comprising at least one ultrahigh vacuum evacuation pump,wherein the ultrahigh vacuum evacuation pump comprises:
a rod-shaped cathode including a non-evaporable getter alloy;
a cylindrical anode disposed so as to surround the cathode; and
a coil or ring-shaped permanent magnet disposed so as to sandwich upper and lower openings of the cylindrical anode and surround the rod-shaped cathode, wherein
an ionization vacuum gauge is disposed in the vicinity of the ultrahigh vacuum evacuation pump, and
the ionization vacuum gauge is an electron source for the ultrahigh vacuum evacuation pump.

US Pat. No. 10,796,890

PLASMA PROCESSING APPARATUS AND SAMPLE STAGE THEREOF

HITACHI HIGH-TECH CORPORA...

1. A plasma processing method comprising the steps of:mounting a wafer to be processed on an upper surface of a sample stage which is disposed in a processing chamber inside a vacuum vessel;
generating a plasma inside the processing chamber; and
adjusting a temperature of the wafer in a predetermined permissible range using at least one of heater units which is disposed inside a dielectric film constituting the upper surface of the sample stage and configured to generate heat,
wherein the at least one of heater units is comprised of a plurality of arcuate portions which are arranged in a ring-shape so as to surround a central region of the dielectric film and connected in series inside the dielectric film, and the at least one of heater units is supplied DC power from a DC power supply, wherein each of the plurality of arcuate portions constituting a circuit arranged in a ring-shape is connected to an adjacent arcuate portion by each of a plurality of connection portions and has a same length forming a same circumferential angle around the central region, and each of the heater units disposed in each of the plurality of the ring-shaped regions constitutes a loop, and the arcuate portions disposed in one of the ring-shaped regions closer to the center region form a greater circumferential angle around the central region than those of the arcuate portions disposed in the ring-shaped region outwardly located, and
the step of adjusting the temperature of the wafer includes a step of adjusting amounts of DC current in each of the plurality of arcuate portion of the at least one of heater units supplied from the DC power supply.

US Pat. No. 10,786,835

ULTRASONIC CLEANER AND AUTOMATIC ANALYZER USING THE SAME

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer comprising:a nozzle which suctions a sample or a reagent;
a cleaning tank which cleans the nozzle;
an ultrasonic cleaner which generates an ultrasonic wave; and
a control portion which performs driving control of the ultrasonic cleaner,
wherein the ultrasonic cleaner includes
a vibrating part which is inserted into cleaning liquid in the cleaning tank and has a cleaning portion with a hollow part into which the nozzle is inserted, and transmits ultrasonic vibration to the cleaning liquid, and
an ultrasonic vibrator which is configured by fixing and fastening a piezoelectric element with two or more metal blocks by a bolt, and generates the ultrasonic vibration to the vibrating part in a horizontal direction,
wherein one end of the vibrating part is connected to the metal blocks at an upper part of the cleaning tank,
wherein the cleaning portion provided at another end of the vibrating part vibrates as a free end in accordance with vibration of the ultrasonic vibrator in the horizontal direction, and
wherein the control portion causes the vibrating part to generate the ultrasonic vibration in a state where the nozzle is inserted into the hollow part, to clean the nozzle.

US Pat. No. 10,783,220

DATA PROCESSING METHOD, DATA PROCESSING APPARATUS AND PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A data processing method for processing data for controlling a plasma processing apparatus, using a double exponential smoothing method, the method comprising the steps of:obtaining, by a measuring device, data related to a plasma processing chamber in which a sample is subjected to a plasma process;
receiving, by a data input/output device, the obtained data;
storing the data in a storage;
calculating, by a calculation processing apparatus, using a double exponential smoothing method in which the data is set as input data, a first predicted value that is a predicted value of smoothed data and a second predicted value that is a predicted value of a gradient of the smoothed data, as output data;
calculating, by the calculation processing apparatus, using a double exponential smoothing method in which the second predicted value is set as input data, a third predicted value that is a predicted value of smoothed data and a fourth predicted value that is a predicted value of a gradient of the smoothed data, as output data;
detecting an end point of the plasma process based on the first predicted value, the second predicted value or the third predicted value, and the fourth predicted value; and
controlling the plasma processing apparatus based on the detected end point.

US Pat. No. 10,781,440

OPERATION METHOD FOR CONTROL MATERIALS AND AUTOMATED ANALYZER

Hitachi High-Tech Corpora...

1. An automated analyzer comprising:a dispensing unit;
a plurality of control materials, including positive and negative control materials:
a holder configured to hold the plurality of control materials, which are accessible as needed by the dispensing unit;
a processor configured to perform sampling of a patient specimen/control material;
an analyzer configured to perform an assay of the sampled patient specimen/control material;
a data analyzer configured to analyze a result of the assay;
a database that holds a plurality of operation processes for the plurality of control materials:
an input interface via which the operation processes are selected; and
a control unit configured to control the dispensing unit, the holder, the processor, the analyzer, the data analyzer, the database, and the input interface,
wherein a patient specimen sampling timing is preliminarily settable, as a setting item, where the patient specimen sampling timing is settable as a time before or after completion of measurement for control materials, and
the control unit is configured to control operation processes for control material/patient specimen by:
1) starting the sampling by giving priority to an entirety of control materials corresponding to all assay items required for measurement;
2) automatically starting sampling of a patient specimen based on the patient specimen sampling timing that is preliminarily set after completion of sampling of the entirety of control materials; and
3) stopping, when an abnormality is present in a measurement result of at least any one control material in the plurality of control materials, sampling of a patient specimen corresponding to the control material in which the abnormality is found, and notifying a tester of the abnormality;
wherein the input interface is configured to automatically set a measurement for the negative control materials when a predetermined number of positive test results are continuously detected;
wherein an assay of the negative control material is automatically performed when a predetermined number of continuous positive test results are obtained for a setting for instructing a measurement for control materials in the setting item, and when the negative control material is determined to be abnormal, a user is informed of the abnormality; and
wherein when no abnormality is present in a measurement for control materials result for a patient specimen temporarily stopped before completion of measurement for control materials, the temporarily stopped sampling of the patient specimen is automatically resumed.

US Pat. No. 10,782,340

DYNAMIC RESPONSE ANALYSIS PROBER DEVICE

Hitachi High-Tech Corpora...

1. A prober device comprising:a sample stage that holds a sample;
a plurality of probes that come into contact with predetermined positions of the sample;
a sample room in which the sample stage and the plurality of probes are disposed in an inside thereof;
a charged particle beam microscope for observing the sample and the plurality of probes;
an input waveform forming mechanism that shapes an input waveform of a dynamic electric signal to be input to one of the probes; and
an output waveform observing mechanism for observing an output waveform of the dynamic electric signal output through the sample,
wherein the input waveform forming mechanism shapes the input waveform such that the output waveform becomes rectangular when the plurality of probes is contacted with the contacts of a normal transistor of the sample, and the output waveform observing mechanism obtains the dynamic response characteristic of another transistor that receives the shaped input waveform of the sample.

US Pat. No. 10,777,379

HOLDER AND CHARGED PARTICLE BEAM APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A holder comprising:a top member that has a first hole for allowing transmission of a charged particle beam and in which a sample is mountable in the first hole;
a bottom member that is provided to overlap with the top member in a plan view;
a side member that is connected to a part of the top member and a part of the bottom member such that the top member and the bottom member are separated from each other in a cross-sectional view;
an opening portion that is a region surrounded by the top member, the side member, and the bottom member;
a first scintillator that is provided in the opening portion; and
a first optical member including
a first light guide that has a function of allowing transmission of light and not allowing transmission of an X-ray, and
a second hole that is provided in the first light guide, wherein
the first optical member is provided in the opening portion such that a part of a side surface of the first light guide is exposed from the side member,
the second hole overlaps with the first hole in a plan view, and
the first scintillator is provided between the first light guide and the bottom member such that a part of the first scintillator is exposed in the second hole.

US Pat. No. 10,768,186

INSPECTION DEVICE

Hitachi High-Tech Corpora...

1. An inspection device comprising:a housing having an external shape that can be detachably held by a conveyance body that is capable of holding a test tube and conveying the test tube over a conveyance belt;
a sensor that is provided in the housing and detects a state in a device during the conveyance;
a storage unit that stores output data from the sensor;
a transmission unit that transmits data in the storage unit to an outside;
a power supply unit that supplies power to the sensor, the storage unit, and the transmission unit; and
a power receiving unit that receives power from a power transmitting unit installed outside the inspection device and supplies power to the power supply unit.

US Pat. No. 10,768,187

AUTOMATIC ANALYSIS DEVICE AND SPECIMEN INSPECTION AUTOMATION SYSTEM

HITACHI HIGH-TECH CORPORA...

1. An automatic analysis device comprising:a measurement processing unit which includes a detector configured to measure a concentration of a biological component contained in a specimen;
a first processor programmed to control the measurement processing unit;
a database which stores consideration information about the specimen, the consideration information including one or more of information about a necessity of re-inspection of the specimen, information about an existence of an uninspected item of the specimen, or information about an existence of a request for additional inspection of the specimen;
one or more holders configured to hold a specimen container accommodating the specimen, wherein each of the one or more holders has a label;
a smart device which includes a display screen, a camera and a second processor,
wherein the second processor is programmed to:
control the camera to capture a first image including a first holder on which the specimen container that accommodates the specimen therein is installed,
display the image on the display screen,
recognize the label on the first holder in the first image,
communicate information about the specimen container that accommodates the specimen in the first holder in the first image,
determine whether a mark is to be given to the specimen container in the first image based on the consideration information stored in the database,
in response to determining that the mark is to be given, add the mark to overlap the specimen container in the first image and update the display thereof on the display screen,
recognize one or more fingers in the first image,
determine whether the one or more fingers in the first image is performing a first predetermined operation or a second predetermined operation to the specimen container having the added mark in the first image,
in response to determining that the one or more fingers is performing the first predetermined operation, display details of the consideration information in proximity to the added mark in the first image on the display screen, and
in response to determining that the one or more fingers is performing the second predetermined operation, send the consideration information to a laboratory information system or a hospital information system.

US Pat. No. 10,768,189

AUTOMATIC ANALYSIS APPARATUS

HITACHI HIGH-TECH CORPORA...

1. An electrochemical automatic analyzer to measure a component bound to magnetic particles in a measurement liquid, the electrochemical automatic analyzer comprising:a first container which holds the measurement liquid;
a measurement solvent supply bottle which holds a measurement solvent;
a detector including a channel, one or more counter electrodes made of platinum, a working electrode in which platinum or gold occupies 50% or more of an elemental composition of a surface thereof, a reference electrode made of silver-silver chloride, and a magnet configured to apply a magnetic field;
a nozzle and a syringe connected to the channel of the detector and configured to introduce the measurement liquid from the first container and the measurement solvent from the measurement solvent supply bottle into the detector;
an inert gas container which holds an inert gas, an introduction channel connected between the inert gas container and the measurement solvent supply bottle and a supply valve which are configured to supply the inert gas into the measurement solvent in the measurement solvent supply bottle and degas a gas from the measurement solvent in the measurement supply bottle;
a dissolved oxygen analyzer in the channel of the detector to measure a degassed state of the measurement solvent;
a power supply; and
a controller programmed to:
control the nozzle and the syringe to introduce the measurement liquid into the channel of the detector and control the magnet to trap the magnetic particles on the working electrode;
control the supply valve to supply the inert gas into the measurement solvent while controlling the nozzle and the syringe to introduce the measurement solvent into the channel of the detector;
control the power supply to apply a voltage between the working electrode and the reference electrode and control the power supply to apply a predetermined voltage between the working electrode and the counter electrodes to detect a current corresponding to a concentration of the component in a state in which the measurement solvent is introduced into the channel of the detector,
wherein the component is a chemical substance that is oxidized by applying a voltage of +1.2 V or more between the working electrode and the reference electrode, and
wherein a measurement alarm is output when dissolved oxygen measured by the dissolved oxygen analyzer exceeds a predetermined amount.

US Pat. No. 10,770,266

CHARGED PARTICLE BEAM DEVICE AND CAPTURING CONDITION ADJUSTING METHOD IN CHARGED PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged particle beam device, comprising:an electron source which generates an electron beam;
an objective lens which is applied with a coil current to converge the electron beam on a sample;
a control unit which controls the coil current to be applied to the objective lens;
a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens;
a history information storage unit which stores history information related to the coil current; and
an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

US Pat. No. 10,746,748

AUTOMATIC ANALYSIS DEVICE AND AUTOMATIC ANALYSIS METHOD

HITACHI HIGH-TECH CORPORA...

1. An automatic analysis device comprising:a specimen container holding unit that accommodates and holds a plurality of specimen containers;
a specimen dispensing mechanism that dispenses only subject blood plasma, dispenses only normal blood plasma, and dispenses both the subject blood plasma and the normal blood plasma at a first predetermined mixing ratio of the subject blood plasma and the normal blood plasma to a plurality of vacant specimen containers, respectively;
a plurality of reaction containers to which the specimen dispensing mechanism respectively dispenses the subject blood plasma alone, the normal blood plasma alone, and both the subject blood plasma and the normal blood plasma at the first predetermined mixing ratio after they are prepared in the plurality of vacant specimen containers, respectively;
a reagent dispensing mechanism that dispenses a reagent to each of the plurality of reaction containers;
a measurement unit that irradiates each of the plurality of reaction containers with light emitted from a light source, and that measures a plurality of coagulation times, respectively, based on obtained scattered light and/or transmitted light; and
a control unit configured to control the specimen dispensing mechanism to perform an immediate-type measurement by dispensing the subject blood plasma alone, the normal blood plasma alone, and both the subject blood plasma and the normal blood plasma at the first predetermined mixing ratio immediately after they are prepared in the plurality of vacant specimen containers into the plurality of reaction containers, respectively, to measure immediate-type coagulation times, and configured to control the specimen dispensing mechanism to automatically perform a delayed-type measurement by dispensing the subject blood plasma alone, the normal blood plasma alone, and both the subject blood plasma and the normal blood plasma at the first predetermined mixing ratio into another plurality of reaction containers, respectively, after a predetermined time elapses to measure delayed-type coagulation times.

US Pat. No. 10,732,192

AUTOMATIC ANALYZER

HITACHI HIGH-TECH CORPORA...

1. An automatic analyzer comprising:a transport device that transports a plurality of types of specimen racks including first specimen racks and second specimen racks on a first transport path, and on which at least one specimen container containing a specimen to be analyzed is mounted;
an analysis unit that includes a detector to analyze the specimen contained in the specimen container; and
a controller programmed to control the transport device,
wherein the transport device includes:
a belt mechanism that transports the specimen racks on the first transport path in a transport direction;
a specimen rack stopper provided on the first transport path to stop and limit movement of the specimen racks to a downstream side of a gripping position on the first transport path;
a plurality of sensors disposed along the first transport path at a plurality of positions on an upstream side of the specimen rack stopper and configured to respectively detect a presence or absence of the specimen racks at each of the positions on the first transport path;
a first specimen rack gripping mechanism configured to move along the first transport path and that includes a pair of first gripping plates which are disposed to extend in the transport direction on both sides of the first transport path, and a first motor which is configured to drive the first gripping plates to move to grip one or more of the specimen racks on the first transport path at the gripping position, and the one or more specimen racks are gripped by the first gripping plates by being sandwiched between the first gripping plates from both sides of the first transport path,
wherein the controller is programmed to:
determine whether the one or more specimen racks stopped by the specimen rack stopper at the gripping position are plural first specimen racks or a single second specimen rack based on detection results from the plurality of sensors,
upon determining that the plural first specimen racks are stopped by the specimen rack stopper at the gripping position, cause the first motor to drive each of the first gripping plates to move transverse to the transport direction to have a first gripping width between the first gripping plates to contact and grip both sides of each of the plural first specimen racks stopped by the specimen rack stopper at the gripping position, and cause the transport mechanism to simultaneously transport the gripped plural first specimen racks, and
upon determining that the single second specimen rack is stopped by the specimen rack stopper at the gripping position, cause the first motor to drive each of the first gripping plates to move transverse to the transport direction to have a second gripping width between the first gripping plates to contact and grip both sides of the single second specimen rack stopped by the specimen rack stopper at the gripping position, and cause the transport mechanism to transport the single second specimen rack, and
wherein the second gripping width is smaller than the first gripping width.

US Pat. No. 10,732,512

IMAGE PROCESSOR, METHOD FOR GENERATING PATTERN USING SELF-ORGANIZING LITHOGRAPHIC TECHNIQUES AND COMPUTER PROGRAM

Hitachi High-Tech Corpora...

1. A computer-implemented method of generating a template used for template matching using image processing,the method comprising:
receiving image data including a self-organized pattern in a guide pattern used for a self-organized lithography by an annealing process and a fingerprint pattern;
removing the fingerprint pattern from the image data by the image processing; and
storing the image data from which the fingerprint pattern has been removed as the template in a memory.

US Pat. No. 10,734,191

CHARGED PARTICLE BEAM DEVICE

Hitachi High-Tech Corpora...

1. A charged particle beam device comprising:a charged particle source that generates a primary charged particle beam;
an objective lens that focuses the primary charged particle beam on a sample;
four detectors that are disposed closer to a side of the charged particle source than the objective lens, are disposed symmetrically around an optical axis of the primary charged particle beam, and detect secondary particles emitted by irradiating the sample with the primary charged particle beam;
an electrode, including four electrodes arranged in a circumferential direction around the optical axis of the primary charged particle beam, that forms an electric field in a direction corresponding to each of the four detectors between travel routes of secondary particles from the sample to the four detectors;
one or more control power supplies that apply a same voltage to each of the four electrodes or apply different voltages to each of the four electrodes;
an acceleration electrode arranged between the sample and the detectors; and
a sample application voltage control power supply that applies a first voltage to the sample,
wherein the electric field acts in an azimuth direction of the secondary particles, and deflects the secondary particles emitted toward a region between the four detectors into a direction of a detection surface of each of the four detectors.

US Pat. No. 10,734,207

PLASMA PROCESSING APPARATUS AND ANALYSIS METHOD FOR ANALYZING PLASMA PROCESSING DATA

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a processing chamber configured to perform processing using plasma; and
an analysis device comprising a computer, a memory, and an interface, wherein the analysis device is configured to analyze data of light emitted from the plasma,
wherein the analysis device is further configured to obtain wavelengths of the light correlated with a plasma processing result, and to select, from the obtained wavelengths, a wavelength such that a first factor is larger than a first predetermined value, and to obtain a prediction formula to predict the plasma processing result, based on the selected wavelength, and
wherein the first factor represents a deviation in an intensity distribution of the light.

US Pat. No. 10,705,046

ELECTROPHORESIS DEVICE AND ELECTROPHORESIS METHOD

Hitachi High-Tech Corpora...

1. An electrophoresis device which feeds a sample into capillaries by electrophoresis and optically detects the sample, the device comprising:capillaries;
a capillary head that is provided at a distal end of the capillaries;
a phoretic medium-filled container that is used for the electrophoresis and filled with a phoretic medium;
a guide member that covers a side surface of the phoretic medium-filled container;
a seal member that seals the phoretic medium filled in the phoretic medium-filled container from below; and
a plunger that presses the seal member,
wherein, the capillary head is disposed inside the phoretic medium-filled container.

US Pat. No. 10,665,424

PATTERN MEASURING METHOD AND PATTERN MEASURING APPARATUS

Hitachi High-Tech Corpora...

1. A pattern measuring method of generating a signal waveform based upon a detection signal that is obtained by two-dimensionally scanning a charged particle beam with respect to a pattern formed on a sample, and measuring the pattern by using the signal waveform, whereina first curve indicating a first power spectral density with respect to an edge of one side of the pattern and a second curve indicating a second power spectral density with respect to an edge of the other side of the pattern are obtained by calculating the first power spectral density with respect to the edge of the one side of the pattern and the second power spectral density with respect to the edge of the other side of the pattern based upon a signal that is obtained when the charged particle beam is scanned in a direction intersecting the edge of the pattern;
a difference value between the first curve and the second curve is calculated; and
one of the first curve and the second curve is corrected by using the difference value.

US Pat. No. 10,665,436

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus comprising:a vacuum container having a processing chamber in which a wafer arranged in a decompressed interior is processed by use of plasma; and
a base plate on which the vacuum container is placed, the base plate having an opening through which a gas is exhausted from the processing chamber inside the vacuum container;
a plurality of members that are vertically stacked to constitute the vacuum container, and the plurality of members constituting the vacuum container are configured to be removable and detachable relative to the base plate;
a valve box that is arranged between the vacuum container and a vacuum transfer chamber in which the wafer is transferred in a decompressed interior, the valve box being connected in an airtight manner with an outer side wall surface of one member of the plurality of members;
a lifter that is arranged at a position outside of the vacuum container and opposite to the valve box with the vacuum container arranged therebetween, the lifter including a vertical shaft to which two members of the plurality of members are each coupled at two respective positions vertically distanced so as to vertically move each of the two members along the vertical shaft;
two coupling members which respectively couple the two members to the vertical shaft, the two coupling members including two turning shafts, each of the turning shafts respectively including a vertical rotational axis that is arranged at a joint position between the respective coupling member and a respective one of the two members, and each of the two members are respectively configured to horizontally turn around the vertical rotational axis of the respective turning shaft between a position directly above the base plate and a position distanced from the valve box, and
a traveling nut disposed around the vertical shaft and including two flange surfaces which are disposed at upper and lower ends of the traveling nut and vertically distanced more than a distance between the two members when the plurality of members are vertically stacked to constitute the vacuum container, the traveling nut configured to move along the vertical shaft to sequentially contact, one by one, the two coupling members with the two flange surfaces to move, one by one, the two members constituting the vacuum container which are coupled to the two coupling members.

US Pat. No. 10,665,448

PLASMA PROCESSING APPARATUS

HITACHI HIGH-TECH CORPORA...

1. A plasma processing apparatus, comprising:a processing chamber in which a sample is configured to be plasma processed;
a first electrode supplied with radio-frequency electric power to generate plasma and that includes a gas supply portion to supply a gas to generate the plasma, the gas supply portion disposing a plurality of first gas through holes;
a first gas supply plate which is configured to supply the gas into the processing chamber, which disposes a plurality of second gas through holes and which is disposed under the first electrode;
a second electrode disposed facing the first electrode, the first gas supply plate being disposed between the second electrode and the first electrode; and
a second gas supply plate which is disposed under the first gas supply plate which disposes a plurality of third gas through holes,
a first annular groove flow passage, in which the gas supplied from the first gas through holes flows, formed in the gas supply portion or the first gas supply plate,
a second annular groove flow passage, in which the gas supplied from the second gas through holes flows, formed in the first gas supply plate or the second gas supply plate,
wherein the first gas through holes penetrate the gas supply portion such that the first gas through holes connect to the first annular groove flow passage,
wherein the second gas through holes penetrate the first gas supply plate such that the second gas through holes connect to the first annular groove flow passage at one end and connect to the second annular groove flow passage at another end thereof, and the second gas through holes do not coincide with the first gas through holes,
wherein the third gas through holes penetrate the second gas supply plate such that the third gas through holes connect to the second annular groove flow passage and supply the gas flowed through the second gas through holes to the processing chamber, and the third gas through holes do not coincide with the second gas through holes,
wherein, in a bottom view of the second gas supply plate, a projection of each of the first gas through holes and a projection of the second gas through holes are not coincident with each other and are located next to one another such that the projection of each of respective ones of the second gas through holes are disposed on one side of the projection of each of the first gas through holes in the bottom view of the of the second gas supply plate,
wherein, in the bottom view of the second gas supply plate, each of the third gas through holes are not coincident with and are disposed on another side of the projection of each of the first gas through holes,
wherein the gas supply portion disposes no gas through holes having projections that coincide with projections of any gas through holes of the first gas supply plate,
wherein the first gas supply plate disposes no gas through holes having projections that coincide with any gas through holes of the second gas supply plate,
wherein the gas supply portion disposes no gas through holes having projections that coincide with any gas through holes of the second gas supply plate,
wherein the first electrode, the first gas through holes, the first gas supply plate, the second gas through holes, the second gas supply plate, the third gas through holes, the first annular groove flow passage and the second annular groove flow passage form a gas supply path, and
wherein the plasma processing apparatus includes a plurality of gas supply paths arranged concentrically.