1. A method for depositing a doped silicon feedstock material, the method comprising:introducing a first gas comprising silicon into a reactor chamber; and
introducing a second gas comprising at least one of gallium or indium into the reactor chamber; and
depositing silicon feedstock material doped with at least one of gallium or indium onto a surface within the reactor chamber,
wherein the first gas and the second gas are introduced into the reactor chamber as a mixture,
wherein at least a portion of the first gas is exposed to a material to generate the second gas in a further reactor chamber before entering the reactor chamber,
wherein the further reactor chamber is located outside the reactor chamber.