US Pat. No. 9,642,241

OPTIMAL MOUNTING OF A FLEXIBLE DISPLAY

Flexterra, Inc., Skokie,...

1. A method for mounting a flexible electronics component to a support structure, the method comprising:
bending the flexible electronics component to be aligned with a curved contour, the curved contour determined based on a flexibility
requirement of a product in which the flexible electronics component is to be integrated and based on one or more flexibility
constraints of the flexible electronics component;

bending the support structure to be aligned with the curved contour; and
adhering the bent flexible electronics component to the bent support structure to produce a flexible electronics assembly,
wherein the flexible electronics assembly maintains a strain distribution compliant with the one or more flexibility constraints
of the flexible electronics component when flexed according to the flexibility requirement of the product.

US Pat. No. 9,711,728

FUSED THIOPHENE-BASED CONJUGATED POLYMERS AND THEIR USE IN OPTOELECTRONIC DEVICES

Northwestern University, ...

1. A polymer comprising as repeating units at least one annulated thienyl-vinylene-thienyl (TVT) unit and at least one other
pi-conjugated unit, wherein the annulated TVT unit is selected from the group consisting of:
wherein R1 and R2 independently are selected from the group consisting of H, halogen, CN, a C1-40 alkyl group, a C2-40 alkenyl group, and a C1-40 haloalkyl group; and
wherein the other pi-conjugated unit is a conjugated linear linker comprising one or more unsaturated bonds, or a conjugated
cyclic linker comprising one or more carbocyclic and/or heterocyclic rings.

US Pat. No. 9,650,461

SEMICONDUCTOR MATERIALS PREPARED FROM DITHIENYLVINYLENE COPOLYMERS

BASF SE, Ludwigshafen (D...

1. A polymer, comprising a repeat unit is selected from the group consisting of the formula Ia and Ia?:

wherein:
R1 and R2 are selected from the group consisting of H, halogen, CN, a

C1-30 alkyl group, a C2-30 alkenyl group, a C1-30 habalkyl group, a C1-20 alkoxy group and a C1-20 alkylthio group,

R3 and R4 are selected from the group consisting of H, CN, halogen, a C1-30 alkyl group, a C2-30 alkenyl group, a C1-30 habalkyl group, a C1-20 alkoxy group and a C1-20 alkylthio group,

R5 and R6 are defined as R1, and

m? is 2, 3, 4, 5, 6, 7, 8, 9 or 10.

US Pat. No. 9,644,068

SEMICONDUCTING MATERIALS BASED ON NAPHTHALENEDIIMIDE-VINYLENE-OLIGOTHIOPHENE-VINYLENE POLYMERS

BASF SE, Ludwigshafen (D...

1. A polymer comprising a unit of formula

wherein
R1 and R2 are independently from each other C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, phenyl or a 5 to 8 membered heterocyclic ring system,

wherein each of the C1-30-alkyl, C2-30-alkenyl or C2-30-alkynyl group may be substituted with 1 to 10 substituents independently selected from the group consisting of halogen, —CN,
—NO2, —OH, —NH2, —NH(C1-20-alkyl), —N(C1-20-alkyl)2, —NH—C(O)—(C1-20-alkyl), —S(O)2OH, —CHO, —C(O)—C1-20-alkyl, —C(O)OH, —C(O)—OC1-20-alkyl, —C(O)NH2, —CO(O)NH—C1-20-alkyl, —C(O)N(C1-20-alkyl)2, —O—C1-20-alkyl, —O—C(O)—C1-20-alkyl, —SiH3, SiH2(C1-20-alkyl), SiH(C1-20-alkyl)2, Si(C1-20-alkyl)3, C4-8-cycloalkyl, phenyl and a 5 to 8 membered heterocyclic ring system, and

phenyl or a 5 to 8 membered heterocyclic ring system may be substituted with 1 to 5 C1-16-alkyl groups,

o is 2 or 3
and
n is an integer from 2 to 10,000.

US Pat. No. 9,723,714

ELECTRONIC CIRCUIT DEVICE HAVING A PROTECTIVE BACKING FOR LOW-VELOCITY IMPACTS AND HIGH-VELOCITY IMPACTS

Flexterra, Inc., Skokie,...

1. An electronic circuit device, comprising:
a circuit stack including at least one layer of electrical circuits carried by a support substrate and disposed on a front
side of the support substrate; and

a protective backing carried by the support substrate and disposed on a back side of the support substrate, wherein the protective
backing further comprises:

a first layer formed of a first elastic material; and
a second layer formed of an elastomeric material,
wherein the first material has a higher elasticity than the second material,
wherein the second material has a higher viscoelasticity than the first material, and
wherein the first layer protects the electrical circuits from low velocity impacts, the second viscoelastic layer protects
the electrical circuits from high velocity impacts, and the second layer does not add substantial stiffness to the overall
circuit stack when flexed relatively slowly under normal use.

US Pat. No. 9,704,997

PHOTOPATTERNABLE MATERIALS AND RELATED ELECTRONIC DEVICES AND METHODS

Flexterra, Inc., Skokie,...

1. A method of fabricating an electronic device comprising a semiconductor layer, the method comprising:
forming an organic layer in contact with the semiconductor layer, wherein the organic layer is formed by depositing a thin
film from a composition comprising a polymer having the formula:

wherein:
U and U?, at each occurrence, independently are selected from the group consisting of a halogen, CN, a C1-6 alkyl group, and a C1-6 haloalkyl group;

W and W? independently are —Ar[—Y—Ar]q—, wherein:

Ar, at each occurrence, independently is a divalent C6-18 aryl group;

Y, at each occurrence, independently is selected from the group consisting of —O—,—S—,—S(O)2—,—(CR?R?)r —,—C(O)—, and a covalent bond, wherein R? and R?, at each occurrence, independently are selected from the group consisting
of H, a halogen, CN, a C1-10 alkyl group, and a C1-10 haloalkyl group; and r is selected from 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10; and

q is selected from 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10;
Z and Z? independently are selected from the group consisting of —O—, —S—, and —Se—;
L and L?, at each occurrence, independently are selected from the group consisting of —O—, —S—, a divalent C1-10 alkyl group, a divalent C6-18 aryl group, and a covalent bond;

T and T?, at each occurrence, independently are Q or R, wherein:
Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl
moiety, an epoxy moiety, or a combination thereof; and

R is selected from the group consisting of H, a halogen, a C1-10 alkyl group, a C1-10 haloalkyl group, and a C6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and
CN, provided that W comprises at least one Ar group selected from


p is 1, 2, 3, 4, 5, 6, 7 or 8;
p? is 0, 1, 2, 3, 4, 5, 6, 7 or 8;
x and x? independently are 0, 1, 2, 3 or 4;
m is a real number, wherein 0 n is an integer ranging from 10 to 500; andexposing the thin film to irradiation to photocrosslink the polymer so that the organic layer comprises a photocrosslinked
product of the polymer.

US Pat. No. 9,666,805

BITHIOPHENE SULFONAMIDE-BASED MOLECULAR AND POLYMERIC SEMICONDUCTORS

Northwestern University, ...

1. A semiconducting compound comprising one or more optionally substituted bithiophene sulfonamide moieties, wherein the one
or more optionally substituted bithiophene sulfonamide moieties are identical or different, each being represented by formula
(I):

wherein:
R1 is selected from the group consisting of H, a C1-40 alkyl group, a C2-40 alkenyl group, a C2-40 alkynyl group, and a C1-40 haloalkyl group, each of which optionally is substituted with 1-10 substituents independently selected from a halogen, —CN,
NO2, OH, —NH2, —NH(C1-40 alkyl), N(C1-40 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-40 alkyl, —C(O)OH, —C(O)—OC1-40 alkyl, —C(O)NH2, —C(O)NH—C1-40 alkyl, —C(O)N(C1-40 alkyl)2, —OC1-40 alkyl, —SiH3, —SiH(C1-40 alkyl)2, —SiH2(C1-40 alkyl), —Si(C1-40 alkyl)3, —Si(C1-40 alkyl)2(—O—Si(C1-40 alkyl)3), —Si(C1-40 alkyl)(—O—Si(C1-40 alkyl)3)2, —Si(—O—Si(C1-40 alkyl)3)3, —O—SiH3, —O—SiH(C1-40 alkyl)2, —O—SiH2(C1-40 alkyl), —O—Si(C1-40 alkyl)3, —O—Si(C1-40 alkyl)2(—O—Si(C1-40 alkyl)3), and —O—Si(C1-40 alkyl)(—O—Si(C1-40 alkyl)3)2; and

R2 and R3 independently are selected from the group consisting of H, F, Cl, —CN, a C1-40 alkyl group, a C2-40 alkenyl group, a C2-40 alkynyl group, a C1-40 haloalkyl group, a C1-40 alkoxy group, and a C1-40 thioalkyl group, wherein each of the C1-40 alkyl group, the C2-40 alkenyl group, the C2-40 alkynyl group, the C1-40 haloalkyl group, the C1-40 alkoxy group, and the C1-40 thioalkyl group optionally is substituted with 1-5 substituents independently selected from a halogen, —CN, NO2, OH, —NH2, —NH(C1-6 alkyl), —N(C1-6 alkyl)2, —S(O)2OH, —CHO, —C(O)—C1-6 alkyl, —C(O)OH, —C(O)—OC1-6 alkyl, —C(O)NH2, —C(O)NH—C1-6 alkyl, —C(O)N(C1-6 alkyl)2, —OC1-6 alkyl, —SiH3, —SiH(C1-40 alkyl)2, —SiH2(C1-40 alkyl), —Si(C1-40 alkyl)3, —Si(C1-40 alkyl)2(—O—Si(C1-40 alkyl)3), —Si(C1-40 alkyl)(-O—Si(C1-40 alkyl)3)2, —Si(—O—Si(C1-40 alkyl)3)3, —O—SiH3, alkyl)2, —O—SiH2(C1-40 alkyl), —O—Si(C1-40 alkyl)3 alkyl)3), and —O—Si(C1-40 alkyl)(-O—Si(C1-40 alkyl)3)2.

US Pat. No. 9,708,346

SEMICONDUCTING COMPOUNDS AND RELATED DEVICES

Flexterra, Inc., Skokie,...

1. A compound comprising one or more moieties represented by formula (I):

wherein X is a chalcogen; and one or more linear conjugated moieties and/or one or more cyclic conjugated moieties other than
the moieties represented by formula (I).

US Pat. No. 9,812,645

PERYLENE-BASED SEMICONDUCTORS

Flexterra, Inc., Skokie,...

1. A compound of formula:

wherein:
W1 and W2 independently are selected from the group consisting of —(CRaRb)m—, —(SiRcRd)—, and Ar;

X1, X2, X3, X4, X5, X6, X7, and X8 independently are selected from the group consisting of H, halogen, CN, and ORe, provided at least one of X1, X2, X3, X4, X5, X6, X7, and X8 is not H;

Ar is a divalent aryl or heteroaryl group selected from the group consisting of phenyl, thienyl, and furyl;
Ra and Rb independently are selected from the group consisting of H, a C1-20 alkyl group, a C2-20 alkenyl group, and a C1-20 haloalkyl group;

Rc and Rd independently are selected from the group consisting of H, a C1-20 alkyl group, and a C1-20 haloalkyl group;

Re is selected from the group consisting of H, a C1-20 alkyl group, a C2-20 alkenyl group, and a C1-20 haloalkyl group;

R1, R1?, R2, and R2? independently are selected from the group consisting of H, a linear C1-40 alkyl group, a linear C2-40 alkenyl group, and a linear C1-40 haloalkyl group; and

m is 0, 1, 2, 3, or 4.

US Pat. No. 9,848,494

SUPPORT STRUCTURES FOR A FLEXIBLE ELECTRONIC COMPONENT

FLEXTERRA, INC., Skokie,...

1. An article, comprising:
a flexible electronic component; and
a flexible support structure at least partially slidably coupled to the flexible electronic component, the flexible support
structure and the flexible electronic component being slidable relative to one another when the article is moved between a
substantially flat position and a curved position, such that the article can have a bending range that is within a bending
range of the flexible electronic component itself and complies with bending range requirements of the article,

wherein the flexible support structure includes a first flexible support structure portion made of a first material and a
second flexible support structure portion made of a second material which is more flexible than the first material, wherein
the second flexible support structure portion defines a cavity and a slot which is spatially separate from the cavity along
the cavity, the first flexible support structure portion being disposed in the slot and the flexible electronic component
being disposed in the cavity.

US Pat. No. 9,832,879

SUPPORT STRUCTURES FOR A FLEXIBLE ELECTRONIC COMPONENT

FLEXTERRA, INC., Skokie,...

1. An article, comprising:
a flexible electronic component; and
a flexible support structure at least partially slidably coupled to the flexible electronic component, the flexible support
structure and the flexible electronic component being slidable relative to one another when the article is moved between a
substantially flat position and a curved position, such that the article can have a bending range that is within a bending
range of the flexible electronic component itself and complies with bending range requirements of the article,

wherein the flexible support structure includes a first flexible support structure portion made of a first material and a
second flexible support structure portion made of a second material which is more flexible than the first material, wherein
the second flexible support structure portion defines a cavity and a slot which is spatially separate from the cavity along
the cavity, the first flexible support structure portion being disposed in the slot and the flexible electronic component
being disposed in the cavity.

US Pat. No. 9,818,770

FLEXIBLE MICRO-ELECTRONICS CIRCUITS WITH CRACK MITIGATION

FLEXTERRA, INC., Skokie,...

1. An electronic circuit device, comprising:
a plurality of electrical circuits disposed on a support substrate;
at least one primary electrode extending along a trace on the support substrate, wherein the primary electrode forms a primary
electrical pathway of at least one of the electrical circuits; and

a secondary electrode disposed along and in electrical contact with the primary electrode, wherein the secondary electrode
extends along the trace substantially parallel with the primary electrode and forms a secondary electrical pathway adjacent
the primary electrical pathway;

wherein the secondary electrode is formed of a secondary conductor that is electrically conductive and has a higher strain
limit than the primary electrode, and

wherein the secondary electrode handles a higher amount of strain than the primary electrode without breaking the secondary
electrical pathway and thereby completes the electrical circuit when a gap in the primary electrode interrupts the electrical
circuit through the primary electrode.

US Pat. No. 9,825,261

ORGANIC ELECTROLUMINESCENT TRANSISTOR

Flexterra, Inc., Skokie,...

1. An organic electroluminescent transistor comprising: at least one dielectric layer; at least one control electrode; at
least one hole electrode; at least one electron electrode; and an assembly comprising an emissive ambipolar channel, wherein:
said dielectric layer is arranged between said control electrode and said assembly;
said emissive ambipolar channel comprises at least one layer of an n-type semiconductor material, at least one layer of a
p-type semiconductor material, and at least one layer of an emissive material arranged between said layers of p-type and n-type
semiconductor materials;

said n-type semiconductor material comprises an electron-transporting compound represented by formula (N-1):

wherein:
X is selected from the group consisting of O, S, and Se;
Ar and Ar?, at each occurrence, independently are identical or different monocyclic aryl or heteroaryl groups;
R1 and R2 independently are identical or different electron-withdrawing groups selected from the group consisting of —CN, Ra, —C(O)Rb, and —C(O)ORb; wherein Ra is a C1-20 alkyl, C2-20 alkenyl, or C2-20 alkynyl group substituted with at least one fluoro or cyano group; and Rb is selected from the group consisting of H, a C1-20 alkyl group, a C2-20 alkenyl group, and a C2-20 alkynyl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, and the C2-20 alkynyl group optionally is substituted with one or more fluoro and/or cyano groups; and

m and m? independently are 1 or 2.

US Pat. No. 9,876,183

CHARGE-TRANSPORTING METAL OXIDE-POLYMER BLEND THIN FILMS

Northwestern University, ...

1. An electronic, optical, or optoelectronic device comprising a metal oxide-polymer blend thin film semiconductor or conductor
component, said component comprising a metal oxide lattice and an electrically insulating polymer dispersed therewithin, wherein
the metal oxide lattice comprises an electrically semiconducting or conducting metal oxide and wherein the electrically insulating
polymer is present at no more than about 20% by weight of the electrically semiconducting or conducting metal oxide.

US Pat. No. 9,980,402

SUPPORT STRUCTURES FOR A FLEXIBLE ELECTRONIC COMPONENT

FLEXTERRA, INC., Skokie,...

1. An article, comprising:a flexible display movable between a first position and a second position, the flexible display having a neutral plane;
a flexible support coupled to the flexible display and configured to limit local bending of the flexible display, the flexible support comprising a plurality of substantially rigid support sections and a plurality of hinge points defined between adjacent support sections, the plurality of substantially rigid support sections configured to support the flexible display between at least three consecutive pairs of adjacent hinge points, the plurality of hinge points configured to facilitate a desired bending range for the article.

US Pat. No. 9,923,158

PHOTOCURABLE POLYMERIC DIELECTRICS AND METHODS OF PREPARATION AND USE THEREOF

BASF SE, Ludwigshafen (D...

1. A vinyl polymer, having a formula:

wherein:
Q is -(L?)p-L??;

L?, at each occurrence, independently is selected from the group consisting of —Y?—, —(Y?)m—O—, —Y?—Si(R4)2—, —O—Si(R4)2—, and a covalent bond;

L?? is linked to the coumarin moiety in the formula and is selected from the group consisting of —C(O)—, —C(O)—O—, —O—C(O)—,
—C(O)—Y??—O—, —O—Y??—C(O)—, —C(O)—Y??—NR4—, —NR4—Y??—C(O)—, —O—S(O)k—, —O—Y??—S(O)k—, and a covalent bond:

Y?, at each occurrence, is selected from the group consisting of a divalent C1-6 alkyl group, a divalent C2-6 alkenyl group, and a divalent C6-14 aryl group, wherein each of the C1-6 alkyl group, the C2-6 alkenyl group, and the C6-14 aryl group is optionally substituted with 1-5R5 groups;

Y?? is selected from the group consisting of a divalent C1-6 alkyl group, a divalent C2-6 alkenyl group, and a divalent C6-14 aryl group, wherein each of the C1-6 alkyl group, the C2-6 alkenyl group, and the C6-14 aryl group is optionally substituted with 1-5R5 groups;

k is 0, 1, or 2;
m is 1, 2, 3, 4, 5, or 6;
p is an integer in a range from 1 to 10
W? is selected from the group consisting of a) H, b) a halogen, c) a C1-20 alkyl group, d) a C2-20 alkenyl group, e) a C1-20 haloalkyl group, f) a C3-14 cycloalkyl group, g) a C6-14 aryl group, h) a 3 -14 membered cycloalkyl group, and i) a 5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C1-20 haloalkyl group, the C3-14 cycloalkyl group, the C6-14 aryl group, the 3-14 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with
1 to 5 substituents independently selected from the group consisting of a halogen, —CN, an oxo group, a C1-6 alkyl group, a C1-6 haloalkyl group, a C1-6 alkoxy group, a —C(O)—C1-6 alkyl group, a —C(O)—C1-6 haloalkyl group, and a —C(O)—O—C1-6 alkyl group;

x, x?, x?, and y independently are a real number, wherein 0 n is an integer in a range from 10 to 1,000;
R1 and R2 are independently selected from the group consisting of a) H, b) halogen, c) —CN, d) —NO2, e) —OR4, f) —N(R4)2, g) —CHO, h) —C(O)R4, i) —C(O)OR4, j) —C(O)N(R4)2, k) a C1-20 alkyl group, l) a C2-20 alkenyl group, m) a C2-20 alkynyl group, n) a C1-20 alkoxy group, o) a C1-20 alkylthio group, p) a C1-20 haloalkyl group, q) a —Y—C3-14 cycloalkyl group, r) a —Y—C6-14 aryl group, s) a —Y-3-14 membered cycloheteroalkyl group, and t) a —Y-5-14membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the Y—C3-14 cycloalkyl group, the Y—C6-14 aryl group, the Y-3 -14 membered cycloheteroalkyl group, and the Y-5-14 membered heteroaryl group is optionally substituted
with 1-5 R5 groups;

R4, at each occurrence, independently is selected from the group consisting of a) H, b) a C1-20 alkyl group, c) a C2-20 alkenyl group, d) a C2-20 alkynyl group, e) a C1-20 alkoxy group, f) a C1-20 alkylthio group, g) a C1-20 haloalkyl group, h) a —Y—C3-14 cycloalkyl group, i) a —Y—C6-14 aryl group, j) a —Y-3-14 membered cycloheteroalkyl group, and k) a —Y-5-14 membered heteroaryl group, wherein each of the
C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the Y—C3-14 cycloalkyl group, the Y—C6-14 aryl group, the Y-3-14membered cycloheteroalkyl group, and the Y-5-14 membered heteroaryl group is optionally substituted
with 1-5 R5 groups;

R5, at each occurrence, is independently selected from the group consisting of a) halogen, b) —CN, c) —NO2, d) —OH, e) —O—C6-14 aryl, f) —NH2, g) —NH—C1-10 alkyl, h) alkyl)2, —NH—C6-14 aryl, j) —N(C1-10 alkyl)-C6-14 aryl, k) —N(C6-14 aryl)2, l) —CHO, m) —C(O)—C1-10 alkyl, n) —C(O)—C6-14 aryl, o) —C(O)OH, p) —C(O)—OC1-10 alkyl, q) —C(O)—OC6-14 aryl, r) —C(O)NH2, s) —C(O)NH—C1-10 alkyl, t) —C(O)N(C1-10 alkyl)2, u) —C(O)NH—C6-14 aryl, v) —C(O)N(C1-10 alkyl)-C6-14 aryl, w) —C(O)N(C6-14 aryl)2, x) a C1-10 alkyl group, y) a C2-10 alkenyl group, z) a C2-10 alkynyl group, aa) a C1-10 alkoxy group, ab) a C1-10 alkylthio group, ac) a C1-10 haloalkyl group, ad) a —Y—C3-14 cycloalkyl group, ae) a —Y—C6-14 aryl group, af) a —Y-3-14 membered cycloheteroalkyl group, and ag) a —Y-5-14 membered heteroaryl group, wherein each of the
C1-10 alkyl group, the C2-10 alkenyl group, the C2-10 alkynyl group, the Y—C3-14 cycloalkyl group, the Y—C6-14 aryl group, the Y-3-14 membered cycloheteroalkyl group, and the Y-5-14 membered heteroaryl group is optionally substituted
with 1-5 substituents independently selected from the group consisting of a halogen, CN, a C1-6 alkyl group, a C1-6 haloalkyl group, a C1-6 alkoxy group, a —O—C1-6 haloalkyl group, a —C(O)—C1-6 alkyl group, a —C(O)—C1-6 haloalkyl group, and a —C(O)—O—C1-6 alkyl group, and

wherein Y, at each occurrence, is a divalent C1-6 alkyl group, a divalent C2-6 alkenyl group, a divalent C2-6 alkenyl group, or a covalent bond.

US Pat. No. 9,911,927

COMPOUNDS HAVING SEMICONDUCTING PROPERTIES AND RELATED COMPOSITIONS AND DEVICES

Flexterra, Inc., Skokie,...

1. A compound having the formula IIa:
wherein R1 and R2 independently are a linear C4-40 alkyl group; and m1 and m2 are 1.

US Pat. No. 10,143,080

SUPPORT STRUCTURES FOR AN ATTACHABLE, TWO-DIMENSIONAL FLEXIBLE ELECTRONIC DEVICE

FLEXTERRA, INC., Skokie,...

1. An article, comprising:a flexible electronic component configured for bending along a first dimension and along a second dimension different from the first dimension; and
a flexible support coupled to the flexible electronic component, the flexible support including bending limiting structure configured to constrain bending of the flexible electronic component along the first and second dimensions to a range within a bending tolerance of the flexible electronic component,
wherein the flexible electronic component is slidable relative to at least a portion of the flexible support when the article is bent along the first dimension and when the article is bent along the second dimension, such that the article can have a bending range that is within a bending range of the flexible electronic component.

US Pat. No. 9,908,967

POLYMERIC SEMICONDUCTORS AND RELATED DEVICES

Flexterra, Inc., Skokie,...

1. A polymer comprising a repeating unit M1, wherein the repeating unit M1 comprises a moiety of the formula:

wherein:
X is a chalcogen;
R1, at each occurrence, independently is selected from the group consisting of H, halogen, —CN, NO2, R2, -L-R3, OH, OR2, OR3, NH2, NHR2, N(R2)2, NHR3, NR2R3, N(R3)2, SH, SR2, SR3, S(O)2OH, —S(O)2OR2, —S(O)2OR3, C(O)H, C(O)R2, C(O)R3, C(O)OH, C(O)OR2, C(O)OR3, C(O)NH2, C(O)NHR2, C(O)N(R2)2, C(O)NHR3, C(O)NR2R3, C(O)N(R3)2, SiH3, SiH(R2)2, SiH2(R2), and Si(R2)3, wherein L is selected from the group consisting of a divalent C1-40 alkyl group, a divalent C2-40 alkenyl group, a divalent C1-40 haloalkyl group, and a covalent bond; R2 is selected from the group consisting of a C1-40 alkyl group, a C2-40 alkenyl group, a C2-40 alkynyl group, and a C1-40 haloalkyl group; and R3 is selected from the group consisting of a C3-10 cycloalkyl group, a C6-14 aryl group, a C6-14 haloaryl group, a 3-12 membered cycloheteroalkyl group, and a 5-14 membered heteroaryl group, each of which optionally is
substituted with 1-5 substituents selected from the group consisting of a halogen, —CN, NO2, R2, OR2, and SR2; and

the polymer has a degree of polymerization (n) ranging from 3 to 1,000.

US Pat. No. 9,954,033

BONDING P-TYPE AND N-TYPE SHEETS TO FORM COMPLEMENTARY CIRCUITS

FLEXTERRA, INC., Skokie,...

1. A method for fabricating at least a portion of a display apparatus, the method comprising:fabricating a first sheet comprising a first substrate, a first lower metal layer, a first upper metal layer, a first dielectric layer disposed between the first lower metal layer and the first upper metal layer, and a first semiconductor channel layer,
wherein the first lower metal layer, the first upper metal layer, the first dielectric layer and the first semiconductor channel layer are configured so as to form a first plurality of transistors,
wherein the first plurality of transistors is one of (i) a plurality of P-type transistors or (ii) a plurality of N-type transistors,
wherein either the first lower metal layer forms a drain and a source for each of the first plurality of transistors and the first upper metal layer forms a gate for each of the first plurality of transistors, or the first lower metal layer forms a gate for each of the first plurality of transistors and the first upper metal layer forms a drain and a source for each of the first plurality of transistors, and
wherein the first plurality of transistors includes (i) transistors of an active matrix that includes row and column electrodes, with intersections of the row and column electrodes corresponding to pixel circuits of the display apparatus, and (ii) transistors of drivers of the pixel circuits;
fabricating a second sheet comprising a second substrate, a second lower metal layer, a second upper metal layer, a second dielectric layer disposed between the second lower metal layer and the second upper metal layer, and a second semiconductor channel layer,
wherein the second lower metal layer, the second upper metal layer, the second dielectric layer and the second semiconductor channel layer are configured so as to form a second plurality of transistors,
wherein the second plurality of transistors is the other one of (i) the plurality of P-type transistors or (ii) the plurality of N-type transistors, and
wherein either the second lower metal layer forms a drain and a source for each of the second plurality of transistors and the second upper metal layer forms a gate for each of the second plurality of transistors, or the second lower metal layer forms a gate for each of the second plurality of transistors and the second upper metal layer forms a drain and a source for each of the second plurality of transistors;
after fabricating the second sheet, cutting at least a portion of the second sheet into a plurality of strips each containing at least some of the second plurality of transistors;
bonding at least the portion of the second sheet to the first sheet such that
a layer of conductive material is disposed between and in contact with a first top metal layer and a second top metal layer, the first top metal layer being either (i) the first upper metal layer or (ii) a different layer of the first sheet that is electrically coupled to one or more areas of at least the first upper metal layer and is separated from the first upper metal layer at least by a first set of one or more additional dielectric layers, and the second top metal layer being either (i) the second upper metal layer or (ii) a different layer of the second sheet that is electrically coupled to one or more areas of at least the second upper metal layer and is separated from the second upper metal layer at least by a second set of one or more additional dielectric layers,
the layer of conductive material provides electrically conducting paths between (i) areas of metal on the first top metal layer and (ii) areas of metal on the second top metal layer that are vertically aligned with the areas of metal on the first top metal layer,
the plurality of strips are arranged around a perimeter of the active matrix, and
at least some transistors of the plurality of strips form complementary circuits with the transistors of the drivers of the pixel circuits.

US Pat. No. 9,929,345

CURABLE POLYMERIC MATERIALS AND THEIR USE FOR FABRICATING ELECTRONIC DEVICES

Flexterra, Inc., Skokie,...

1. An electronic device comprising a field-effect transistor having a semiconductor layer comprising a semiconducting electronic material, a dielectric layer comprising an insulating electronic material, and source, drain, and gate electrodes each comprising a conducting electronic material, wherein the field-effect transistor comprises an organic material comprising a ring-opening metathesis polymerization (ROMP) polymer; wherein:the ROMP polymer is a linear polymer characterized by unsaturated bonds in the backbone and is obtained via ring-opening metathesis polymerization from an optionally substituted norbornene monomer, an optionally substituted dicyclopentadiene monomer, or a heteroatom derivative thereof; and wherein at least some of the unsaturated bonds in the backbone of the linear polymer are either hydrogenated, oxidized or epoxidized; and
either the dielectric layer comprises the organic material as the insulating electronic material, or the organic material is in contact with at least one of the semiconducting electronic material, the insulating electronic material, and the conducting electronic material.

US Pat. No. 10,115,902

AZINOTHIADIAZOLE COMPOUNDS AND RELATED SEMICONDUCTOR DEVICES

Flexterra, Inc., Skoke, ...

1. A semiconducting compound, the semiconducting compound being a polymer having a first repeating unit M1 comprising one or more divalent azino[1,2,3]thiadiazole moieties represented by formula (I):wherein:each W independently is selected from the group consisting of N, CH, and CR1, provided that at least one of the W is N; and
R1 is selected from the group consisting of halogen, —CN, NO2, R2, -L-R3, OH, OR2, OR3, NH2, NHR2, N(R2)2, NR2R3, N(R3)2, SH, SR2, SR3, S(O)2OH, —S(O)2OR2, —S(O)2OR3, C(O)H, C(O)R2, C(O)R3, C(O)OH, C(O)OR2, C(O)OR3, C(O)NH2, C(O)NHR2, C(O)N(R2)2, C(O)NR2R3, C(O)N(R3)2, SiH3, SiH(R2)2, SiH2(R2), and Si(R2)3, wherein L is selected from the group consisting of a divalent C1-40 alkyl group, a divalent C2-40 alkenyl group, a divalent C1-40 haloalkyl group, and a covalent bond; R2 is selected from the group consisting of a C1-40 alkyl group, a C2-40 alkenyl group, a C2-40 alkynyl group, and a C1-40 haloalkyl group; and R3 is selected from the group consisting of a C3-10 cycloalkyl group, a C6-14 aryl group, a C6-14 haloaryl group, a 3-12 membered cycloheteroalkyl group, and a 5-14 membered heteroaryl group, each of which optionally is substituted with 1-5 substituents independently selected from the group consisting of halogen, —CN, NO2, R2, OR2, and SR2,
wherein said polymer has a degree of polymerization (n) ranging from 3 to 1,000.

US Pat. No. 10,043,978

ORGANIC SEMICONDUCTOR FORMULATIONS

Flexterra, Inc., Skokie,...

1. An organic semiconductor formulation comprising a p-type organic semiconducting compound in a liquid medium, wherein the p-type organic semiconducting compound is selected from the group consisting of an oligothiophene, a thienocoronene, and a thienoacene; and the liquid medium consists essentially of a first liquid and optionally a second liquid,the first liquid being an electron-poor liquid
(a) is selected from the group consisting of 1-trifluoromethyl-naphthalene, 2-(trifluoromethyl)naphthalene, 2-cyanonaphthalene, 1-cyanonaphthalene, 2-naphthaldehyde, 1-naphthaldehyde, 1-(1-naphthalenyl)ethanone, methyl 2-naphthyl ketone, methyl 2-naphthalenecarboxylate, methyl 1-naphthalenecarboxylate, 1-nitronaphthalene, 2-nitronaphthalene, 5-(trifluoromethyl)-1,2,3,4-tetrahydronaphthalene, 5,6,7,8-tetrahydronaphthalene-2-carbonitrile, 5,6,7,8-tetrahydronaphthalene-1-carbonitrile, 6-nitro-1,2,3,4-tetrahydronaphthalene, 5-nitro-1,2,3,4-tetrahydronaphthalene, methyl 5,6,7,8-tetrahydronaphthalene-1-carboxylate, methyl 5,6,7,8-tetrahydronaphthalene-2-carboxylate; or
(b) is an aromatic compound having a core consisting of a phenyl group fused to a cycloheteroalkyl group comprising at least one of —C(O)—, —SO2—, and —CF2— in the ring, wherein the cycloheteroalkyl group is selected from the group consisting of:
wherein R is H or a C1-6 alkyl group; and p? is 1 or 2; andthe second liquid being selected from the group consisting of petroleum ethers, acetonitrile, benzene, toluene, o-xylene, m-xylene, p-xylene, cyclohexylbenzene, 1-methyl naphthalene, 2-methylnaphthalene, 1-ethyl naphthalene, 2-ethylnapthalene, 1,2,4-trimethylbenzene, mesitylene, tetraline, indane, indene, acetone, methyl ethyl ketone, tetrahydrofuran, dioxane, bis(2-methoxyethyl) ether, diethyl ether, di-isopropyl ether, t-butyl methyl ether, methyl acetate, ethyl acetate, methyl formate, ethyl formate, isopropyl acetate, butyl acetate, cyclopentanone, cyclohexanone, and 2-methypyrrolidone.

US Pat. No. 10,074,319

HIGH QUALITY IMAGE UPDATES IN BI-STABLE DISPLAYS

FLEXTERRA, INC., Skokie,...

1. An electronic display device, comprising:a processor;
a computer readable memory coupled to the processor;
a bi-stable electronic display having a set of pixels defining an image area; and
a driving integrated circuit coupled between the processor and the bi-stable electronic display to drive the bi-stable electronic display, the driving integrated circuit including a frame buffer memory having a memory location for each of the set of pixels of the bi-stable electronic display, a look-up table, and a controller which is coupled to the processor;
wherein the computer readable memory stores instructions that, when executed on the processor, causes the processor to compare, on a pixel-by-pixel basis, pixel values for a previously displayed image displayed on the bi-stable electronic display and pixel values for a new image to be displayed on the bi-stable electronic display to produce a difference matrix;
wherein the look-up table stores information defining a set of recipes, each recipe adapted to be used by the driving integrated circuit to drive a pixel of the bi-stable electronic display from a first image level to a second image level during a refresh cycle of the bi-stable electronic display; and
wherein the controller operates during a refresh cycle of the bi-stable electronic display to store, in the frame buffer memory, a set of pointers developed from the difference matrix, wherein the pointer at each different memory location of the frame buffer memory points to one of a set of memory locations in the look-up table to define a recipe to be used during the frame refresh cycle to change a pixel from a first image level to a second image levels associated with the new image.

US Pat. No. 10,121,455

ATTACHABLE DEVICE WITH FLEXIBLE ELECTRONIC DISPLAY ORIENTATION DETECTION

FLEXTERRA, INC., Skokie,...

1. A system, comprising:a flexible band having a flexible substrate and a flexible electronic display, the flexible substrate having first and second ends, and the flexible display disposed over a portion of the flexible substrate between the first and second ends;
a display driver electronically connected to the flexible electronic display for providing public and private image content to the flexible electronic display;
a position detection element disposed on or near the flexible band;
one or more processors coupled to the display driver; and
a memory that stores an orientation detection routine that, when executed by the one or more processors, operates to:
instruct a user to take one or more detection initiation actions to activate the position detection element to determine a point on the flexible band using a signal from the position detection element, wherein the determined point on the flexible band is disposed adjacent to a particular point on an exterior object when the flexible band is disposed around the exterior object, and
calibrate the flexible electronic display so that the display driver displays the public image content via the flexible electronic display at one or more positions and displays the private image content via the flexible electronic display at one or more other positions based on the location of the determined point on the band,
wherein the orientation detection routine operates to calibrate the flexible electronic display based on an amount of overlap of the first and second ends of the flexible substrate.

US Pat. No. 10,147,895

CURABLE POLYMERIC MATERIALS AND THEIR USE FOR FABRICATING ELECTRONIC DEVICES

Flexterra, Inc., Skokie,...

1. An electronic device comprising a transistor component having a semiconductor layer comprising a semiconducting electronic material, a dielectric layer comprising an insulating electronic material, and source, drain, and gate electrodes each comprising a conducting electronic material, wherein the transistor component comprises:an organic material comprising a linear polymer having a repeating unit of formula (A):
wherein:X and Y independently are selected from the group consisting of CH2, CHR, CR2, C(O), SiH2, SiHR, SiR2, NH, NR, O, and S, whereinR is selected from the group consisting of a halogen, —ORa, —C(O)ORa, —OC(O)Ra, —NRbRc, —C(O)NRbRc, —OC(O)NRbRc, a C1-10 alkyl group, a C1-10 haloalkyl group, and an optionally substituted aryl or heteroaryl group,
Ra is a C1-10 alkyl group or a —Si(C1-10 alkyl)3 group, and
Rb and Rc independently are H or a C1-10 alkyl group;W—Z is CH?CH orR1, R2, R3, and R4 independently are selected from the group consisting of H, —ORd, —C(O)ORd, —OC(O)ORd, a C1-10 alkyl group, a C1-10 haloalkyl group, and L-Q, whereinL is selected from the group consisting of —O—, —C(O), a divalent C1-10 alkyl group, a divalent C6-18 aryl group, a covalent bond, and combinations thereof,
Q is a crosslinkable group comprising, a —CH?CH2 moiety, a —CH?CH—CH3 moiety, a —CH?C(CH3)2 moiety, a —C(CH3)?CH2 moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, an epoxy moiety, or a combination thereof, and
Rd is H or a C1-10 alkyl group,provided that at least one of R1, R2, R3, and R4 is L-Q; andm is 0, 1 or 2;wherein either the dielectric layer comprises the organic material as the insulating electronic material or the organic material is in contact with at least one of the semiconducting electronic material, the insulating electronic material, and the conducting electronic material.

US Pat. No. 10,201,089

SUPPORT STRUCTURES FOR A FLEXIBLE ELECTRONIC COMPONENT

FLEXTERRA, INC., Skokie,...

1. An article, comprising: a flexible electronic component comprising one or more flexible optoelectronic components configured to at least one of emit, reflect, or transflect light; and a support structure coupled to the flexible electronic component, the support structure comprising a first substrate and a second substrate movably connected to the first substrate, a plurality of slots being formed in the first substrate and a plurality of projections being formed on the second substrate, wherein each of the plurality of projections is movably disposed within a corresponding one of the plurality of slots, the plurality of slots configured to limit bending of the article and configured to limit torsion applied to the article to a range within a torsion tolerance of the flexible electronic component; and the plurality of slots comprises a first subset of slots and a second subset of slots formed across from the first subset, each of the first subset of slots having a different length, and each of the second subset of slots having a different length, and wherein the plurality of projections comprises a first subset of projections and a second subset of projections formed across from the first subset, each of the first subset of projections having a different length, and each of the second subset of projections having a different length, the lengths defined such that the article has a desired shape.