US Pat. No. 9,551,090

OPTICAL QUALITY DIAMOND MATERIAL

Element Six Technologies ...

1. A CVD single crystal diamond material comprising:
a single substitutional nitrogen concentration of more than 3×1015 atoms/cm3 and less than 5×1017 atoms/cm3 as measured by electron paramagnetic resonance (EPR); and

a low optical birefringence, indicative of low strain, such that when a sample of the material is prepared as an optical plate
having a thickness of at least 0.5 mm thickness and measured at room temperature, nominally 20° C., over an area of at least
1.3 mm×1.3 mm, |sin ?|, the modulus of the sine of the phase shift, for at least 98% of the measured area of the sample remains
in first order, ? not exceeding ?/2, and |sin ?| does not exceed 0.9.

US Pat. No. 9,410,242

MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL

Element Six Technologies ...

1. A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma
reactor comprising:
a plasma chamber;
a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which
the synthetic diamond material is to be deposited in use;

a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and
a gas flow system for feeding process gases into the plasma chamber and removing them therefrom;
wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around
the substrate holder within the plasma chamber when viewed down a central axis of the plasma chamber,

wherein the electrically conductive plasma stabilizing annulus is in the form of a projecting ring which protrudes into the
plasma chamber from a side wall of the plasma chamber,

wherein the electrically conductive plasma stabilising annulus has an upper surface, a lower surface, and an end portion which
forms the projecting ring which protrudes into the plasma chamber from the side wall of the plasma chamber,

wherein the upper surface of the electrically conductive plasma stabilising annulus is spaced apart from the a microwave coupling
configuration, the electrically conductive plasma stabilizing annulus being positioned at a height within 50 mm, of a height
of the supporting surface of the substrate holder, and

wherein the electrically conductive plasma stabilizing annulus has an axial depth relative to a height of the plasma chamber
in the range 1% to 30%.

US Pat. No. 9,416,005

SOLID STATE MATERIAL

Element Six Technologies ...

1. A solid state system comprising a host material and a quantum spin defect, the host material comprising a layer of single
crystal chemical vapor deposition (CVD) diamond having a total nitrogen concentration of about 20 ppb or less and a concentration
of paramagnetic defects of about 1 ppm or less, and the quantum spin defect having an electronic spin state with a decoherence
time (T2) at room temperature of between 500 ?s and 1.8 ms wherein a surface roughness, Rq of the layer of single crystal CVD diamond within an area defined by a circle of radius of about 5 ?m centered on the point
on a surface of the layer of single crystal CVD diamond nearest to where the quantum spin defect is formed is about 10 nm
or less, wherein the quantum spin defect is a nitrogen-vacancy (NV) center disposed within the layer of single crystal CVD
diamond, and wherein the NV center is positioned within about 100 ?m of the surface of the layer of single crystal CVD diamond.

US Pat. No. 9,335,606

DEVICE FOR ACHIEVING MULTI-PHOTON INTERFERENCE FROM NITROGEN-VACANCY DEFECTS IN DIAMOND MATERIAL

Element Six Technologies ...

1. A device for achieving multi-photon interference, said device comprising:
at least two solid state photon emitters, each solid state photon emitter comprising nuclear and electron spin states coupled
together, each solid state photon emitter being configured to produce photon emission comprising a photon emission peak, wherein
the photon emission peaks from different solid state photon emitters have a first frequency difference between peak intensities,
and wherein the electron spin states of each solid state photon emitter are resolvable;

an excitation arrangement configured to individually address the at least two solid state photon emitters;
a plurality of optical outcoupling structures wherein each solid state photon emitter is provided with an associated optical
outcoupling structure;

a tuning arrangement configured to reduce the first frequency difference between the peak intensities of the photon emission
peaks from the at least two solid state photon emitters to a second frequency difference which is smaller than the first frequency
difference;

a photon interference arrangement configured to overlap photon emissions from the at least two solid state emitters after
tuning; and

a detector arrangement configured to detect photon emissions from the at least two solid state emitters after tuning and passing
through the photon interference arrangement, wherein the detector arrangement is configured to resolve sufficiently small
differences in photon detection times such that tuned photon emissions from the at least two solid state emitters are quantum
mechanically indistinguishable resulting in quantum interference between indistinguishable photon emissions from different
solid state photon emitters;

wherein the at least two solid state photon emitters are formed by photon emissive defects in a diamond material, and
wherein the photon emissive defects are nitrogen vacancy (NV) defects.

US Pat. No. 9,255,009

DIAMOND MATERIAL

Element Six Technologies ...


US Pat. No. 9,068,257

DIAMOND MATERIAL

Element Six Technologies ...

1. CVD diamond material graded fancy orange, wherein the concentration of isolated vacancies is <0.3 ppm, wherein the CVD
diamond material has a single substitutional nitrogen content of less than 1 ppm, and wherein an absorption at 250 nm in an
absorption spectrum measured at room temperature is >5 cm?1 when the absorption spectrum has been scaled to 0 cm?1 at 800 nm.

US Pat. No. 9,133,566

HIGH CRYSTALLINE QUALITY SYNTHETIC DIAMOND

ELEMENT SIX TECHNOLOGIES ...

1. A single crystal CVD diamond material, having an extended defect density, as characterized by X-ray topography, of less
than 400/cm2 over an area of greater than 0.014 cm2, having a concentration of nitrogen in a solid part of the material of less than 0.1 ppm, and having an X-ray rocking curve
for the (004) reflection with a full width at half maximum (FWHM) of less than 10 arc seconds.

US Pat. No. 9,157,170

SINGLE CRYSTAL DIAMOND MATERIAL

Element Six Technologies ...

1. A grown CVD diamond material containing a plurality of rows of dislocations, each row extending in a substantially <001>
direction, each row of dislocations when projected onto a (001) plane defining a point, and the points when joined defining
a first length extending in a <100> direction, and a second length which intersects the said first line, and extends in either
a <100> or a <110> direction, the ratio of the first length to the second length, or vice versa, being at least 1.3:1.

US Pat. No. 9,061,263

METHOD OF IMPROVING THE CRYSTALLINE PERFECTION OF DIAMOND CRYSTALS

ELEMENT SIX TECHNOLOGIES ...

1. Grown high pressure-high temperature (HPHT) synthetic diamond material with a nitrogen concentration less than 5 parts
per million having a density of dislocations and stacking faults as characterized by X-ray topography of below 400/cm2.

US Pat. No. 9,518,338

SINGLE CRYSTAL DIAMOND

Element Six Technologies ...

1. A method of producing a plate of single crystal diamond, which comprises providing a diamond substrate, growing diamond
homoepitaxially on a surface of the substrate by chemical vapour deposition (CVD) and severing the homoepitaxial CVD grown
diamond transverse to the surface of the substrate on which diamond growth took place to produce a plate of single crystal
CVD diamond having side faces and major faces, the major faces being larger in area than the side surfaces, wherein the major
faces are transverse to the surface of the substrate.

US Pat. No. 9,418,833

SYNTHETIC DIAMOND COATED COMPOUND SEMICONDUCTOR SUBSTRATES

Element Six Technologies ...

1. A method of fabricating a synthetic diamond coated compound semiconductor substrate, the method comprising:
loading a composite substrate into a chemical vapour deposition (CVD) reactor, the composite substrate comprising a single
crystal carrier wafer, a layer of single crystal compound semiconductor epitaxially grown on the carrier wafer, and an interface
layer disposed on the layer of compound semiconductor, the interface layer forming a growth surface suitable for growth of
synthetic diamond material thereon via a CVD technique; and

growing a layer of CVD diamond material on the growth surface of the interface layer;
wherein during growth of CVD diamond material a temperature difference at the growth surface between an edge and a centre
point thereof is maintained to be no more than 80° C.;

wherein the carrier wafer has an aspect ratio, defined by a ratio of thickness to width, of no less than 0.25/100;
wherein the width of the carrier wafer is no less than 90 mm and no more than 400 mm;
wherein the thickness of the carrier wafer is no less than 600 ?m and no more than 5 mm;
wherein the carrier wafer is formed of one of silicon, silicon carbide, and sapphire;
wherein the thickness of the layer of CVD diamond material is in a range 50 ?m to 150 ?m;
wherein the interface layer has a thickness no more than 50 nm; and
wherein growth surface of the interface layer has a surface roughness Ra in the range 1 nm to 1 ?m, 1 nm to 500 nm, 10 nm to 500 nm, 10 nm to 200 nm, or 10 nm to 100 nm.

US Pat. No. 9,142,389

MICROWAVE POWER DELIVERY SYSTEM FOR PLASMA REACTORS

Element Six Technologies ...

1. A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors, the microwave
power delivery system comprising:
a tuner configured to be coupled to a microwave source and configured to match impedance of the plurality of microwave plasma
reactors to that of the microwave source; and

a waveguide junction coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma
reactors,

wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third
ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink,

wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between
the second and third ports for providing microwave power to respective microwave plasma reactors,

wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves
from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma
reactor causing an imbalance,

wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third
ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used,
and

wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth
port into the microwave sink.

US Pat. No. 9,840,419

DIAMOND MATERIAL

Element Six Technologies ...

1. A method of making fancy orange synthetic CVD diamond material, the method comprising: (i) irradiating a single crystal
diamond material that has been grown by CVD and has a [Ns0] concentration less than 5 ppm to introduce isolated vacancies V into at least part of the CVD diamond material, the total
concentration of isolated vacancies [VT] in the irradiated diamond material being at least the greater of (a) 0.5 ppm and (b) 50% higher than the [Ns0] concentration in ppm in the single crystal diamond material, and (ii) annealing the irradiated diamond material to form
vacancy chains from at least some of the introduced isolated vacancies.

US Pat. No. 9,214,407

SYNTHETIC DIAMOND HEAT SPREADERS

ELEMENT SIX TECHNOLOGIES ...

1. A semiconductor device component comprising:
a compound semiconductor layer; and
synthetic diamond heat spreader, wherein the synthetic diamond heat spreader comprises:
a synthetic diamond material including a surface layer having a 13C content of less than a natural isotopic abundance (1.1%) and a support layer which is thicker than the surface layer and
which has an isotopic abundance of 13C which is closer to the natural isotopic abundance than the surface layer, wherein at least 50% of a thickness of the synthetic
diamond material is formed of the support layer; and

a non-diamond thermal transfer layer disposed in contact with the surface layer of the synthetic diamond material for transferring
heat into the surface layer from the compound semiconductor layer which is disposed on the non-diamond thermal transfer layer,

wherein the surface layer has a thickness of no more than 20 ?m, and
wherein a distance between the surface layer of the synthetic diamond material and the compound semiconductor layer is no
more than 3 ?m.

US Pat. No. 9,555,499

METHOD OF CUTTING SUPER-HARD MATERIALS USING AN ELECTRON BEAM AND A RANGE OF BEAM SCANNING VELOCITIES

Element Six Technologies ...

1. A method of cutting a super-hard material using an electron beam, wherein the electron beam is directed onto a surface
of the super-hard material and moved relative to the surface such that the electron beam moves across the surface of the super-hard
material at an electron beam scanning velocity in a range 100 to 5000 mms?1 to cut the super-hard material, wherein the electron beam has a beam current in a range 5 mA to 120 mA, wherein the electron
beam has an accelerating voltage in a range 10 kV to 200 kV, wherein the electron beam has a spot size at a point of contact
on the super-hard material no more than 500 ?m, wherein the electron beam has an input line energy, as defined by (accelerating
voltage×beam current)/(electron beam scanning velocity), in a range 500 to 30000 Jm?1, wherein the electron beam has a surface energy density, as defined by (accelerating voltage×beam current)/(electron beam
scanning velocity×beam width), in a range 10 to 600 MJm?2, wherein the electron beam applies an energy per unit volume of super-hard material which is volatilized, as defined by (accelerating
voltage×beam current)/(electron beam scanning velocity×cut cross-sectional area), in a range 100 to 2500 GJm?3.

US Pat. No. 9,317,811

DIAMOND MATERIAL

Element Six Technologies ...

1. A solid state system comprising:
a host material comprising single crystal CVD diamond material having a concentration of neutral substitutional nitrogen of
10 ppb or less, a fraction of total C atoms that are 12C atoms of 99% or more, and a concentration of paramagnetic defects of 1 ppm or less: and

a quantum spin defect, said quantum spin defect having an electronic spin state with a T2 at room temperature of about 900 ?s or more, wherein the quantum spin defect is an NV center,

wherein the quantum spin defect is disposed within the single crystal CVD diamond material and positioned within about 100
?m of a surface of the single crystal CVD diamond material, said surface having a surface roughness Ra of about 50 nm or less.

US Pat. No. 9,103,050

SINGLE CRYSTAL DIAMOND PREPARED BY CVD

Element Six Technologies ...

1. Single crystal CVD diamond having:
(a) a level of any single impurity of not greater than 5 ppm and a total impurity content of not greater than 10 ppm wherein
impurity excludes hydrogen and its isotopic forms, and

(d) in electron paramagnetic resonance (EPR), a single substitutional nitrogen centre [N—C]0 at a concentration <40 ppb.

US Pat. No. 9,478,938

THICK POLYCRYSTALLINE SYNTHETIC DIAMOND WAFERS FOR HEAT SPREADING APPLICATIONS AND MICROWAVE PLASMA CHEMICAL VAPOUR DEPOSITON SYNTHESIS TECHNIQUES

Element Six Technologies ...

1. A method of fabricating a polycrystalline CVD synthetic diamond material having an average thermal conductivity at room
temperature through a thickness of the polycrystalline CVD synthetic diamond material of at least 2000 Wm?1K?1, the method comprising:
loading a refractory metal substrate into a CVD reactor;
locating a refractory metal guard ring around a peripheral region of the refractory metal substrate, the refractory metal
guard ring defining a gap between an edge of the refractory metal substrate and the refractory metal guard ring having a width
1.5 mm to 5.0 mm;

introducing microwaves into the CVD reactor at a power such that the power density in terms of power per unit area of the
refractory metal substrate is in a range 2.5 to 4.5 W mm?2;

introducing process gas into the CVD reactor wherein the process gas within the CVD reactor comprises a nitrogen concentration
in a range 600 ppb to 1500 ppb calculated as molecular nitrogen N2, a carbon containing gas concentration in a range 1.5% to 3.0% by volume, and a hydrogen concentration in a range 92% to
98.5% by volume;

controlling an average temperature of the refractory metal substrate to lie in a range 750° C. to 950° C. and to maintain
a temperature difference between an edge and a centre point on the refractory metal substrate of no more than 80° C.

growing polycrystalline CVD synthetic diamond material to a thickness of at least 1.3 mm on the refractory metal substrate;
and

cooling the polycrystalline CVD synthetic diamond material to yield a polycrystalline CVD synthetic diamond material having
a thickness of at least 1.3 mm, an average thermal conductivity at room temperature through the thickness of the polycrystalline
CVD synthetic diamond material of at least 2000 Wm?1K?1 over at least a central area of the polycrystalline CVD synthetic diamond material, wherein the central area is at least 70%
of a total area of the polycrystalline CVD synthetic diamond material, a single substitutional nitrogen concentration no more
than 0.80 ppm and no less than 0.10 ppm over at least the central area of the polycrystalline CVD synthetic diamond material,
and wherein the polycrystalline CVD synthetic diamond material is substantially crack free over at least the central area
thereof such that the central area has no cracks which intersect both external major faces of the polycrystalline CVD synthetic
diamond material and extend greater than 2 mm in length.

US Pat. No. 9,851,418

DIAMOND MAGNETOMETER

Element Six Technologies ...

1. A magnetometer comprising:
a sensor formed of diamond material and comprising a plurality of spin centres;
a microwave source configured to subject the plurality of spin centres to microwave pulses;
a light source configured to subject the plurality of spin centres to light pulses; and
a detector configured to detect a fluorescent output signal emitted from the plurality of spin centres,
wherein the magnetometer is configured to integrate the fluorescent output signal over a signal averaging time and process
the fluorescent output signal such that a standard deviation of the fluorescent output signal decreases with the square root
of the signal averaging time over a time period which spans at least two orders of magnitude in the signal averaging time
to achieve a standard deviation of less than 100 picotesla.

US Pat. No. 9,115,443

COLOURED DIAMOND

Element Six Technologies ...


US Pat. No. 10,011,491

PLASMA ETCHING OF DIAMOND SURFACES

Element Six Technologies ...

1. A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said polycrystalline CVD diamond material consists of a layer of polycrystalline diamond material that excludes any layers of single crystal diamond material and wherein said surface is damage free to the extent that the following criteria is fulfilled:if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2, wherein the anisotropic thermal revealing etch is performed using the following procedure:
(i) examining the surface at a magnification of 50 times using reflected light with a metallurgical microscope to ensure that there are no surface features present;
(ii) exposing the surface to an air-butane flame thereby raising the surface to a temperature in a range 800° C. to 1000° C. for a period of 10 seconds;
(iii) examining the surface at a magnification of 50 times using reflected light with a metallurgical microscope and counting defects revealed by the anisotropic thermal revealing etch to determine their number density; and
(iv) repeating steps (ii) and (iii) and comparing the measured density of defects with that of the previous cycle until the following condition is met: if the number density of defects counted is less than or equal to 150% of the number density determined in the previous cycle, then all the defects are deemed to be revealed and the measurement recorded is the average of the measurements of the last two cycles, if not the cycle is repeated again, andwherein the number density of defects in step (iii) is measured by the following method:(i) the defects to be counted are those defects visible at a magnification of 50 times with a metallurgical microscope which fall totally or partially within a rectangular area 1 mm×0.2 mm projected onto the surface being characterised;
(ii) the area is selected at random over the surface or portion of the surface to be characterised and randomly oriented;
(iii) the defects are counted in a minimum of 5 such areas; and
(iv) the number density of defects is calculated by dividing the total number of defects counted by the total area examined to give a number density in terms of defects per mm2.

US Pat. No. 9,981,317

POLYCRYSTALLINE CHEMICAL VAPOUR DEPOSITED DIAMOND TOOL PARTS AND METHODS OF FABRICATING, MOUNTING, AND USING THE SAME

Element Six Technologies ...

1. A polycrystalline CVD synthetic diamond work piece for use in a polycrystalline CVD synthetic diamond tool, the polycrystalline CVD synthetic diamond work piece comprising:a working surface;
and a rear mounting surface;
wherein an average lateral grain size of the rear mounting surface is no less than 10 ?m, and
wherein the working surface comprises:
(a) smaller diamond grains than the rear mounting surface;
(b) an average lateral grain size in a range 10 nm to 15 ?m; and
(c) a Raman signal generated by a laser focused on the working surface which exhibits both of the following characteristics:
(1) an sp3 carbon peak at 1332 cm?1 having a full width half-maximum of no more than 8.0 cm?1; and
(2) an sp2 carbon peak at 1550 cm?1 having a height which is no more than 20% of a height of an sp3 carbon peak at 1332 cm?1 after background subtraction when using a Raman excitation source at 633 nm.

US Pat. No. 9,210,972

FREE-STANDING NON-PLANAR POLYCRYSTALLINE SYNTHETIC DIAMOND COMPONENTS AND METHOD OF FABRICATION

Element Six Technologies ...

1. A free-standing non-planar polycrystalline CVD synthetic diamond component which comprises a nucleation face and a growth
face, the nucleation face comprising smaller grains than the growth face, the nucleation face having a surface roughness Ra no more than 50 nm;
wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a longest linear dimension when projected
onto a plane of no less than 10 mm and is substantially crack free over at least a central region thereof, wherein the central
region is at least 70% of a total area of the free-standing non-planar polycrystalline CVD synthetic diamond component;

wherein the central region has no cracks which intersect both external major faces of the free-standing non-planar polycrystalline
CVD synthetic diamond component and extend greater than 2 mm in length;

wherein the free-standing non-planar polycrystalline CVD synthetic diamond component comprises a central dome-shaped portion
with the growth face of the central dome-shaped portion being convex;

wherein the free-standing non-planar polycrystalline CVD synthetic diamond component further comprises a substantially cylindrical
peripheral portion extending from an outer circumference of the dome-shaped portion and having side walls oriented within
20° of a central rotational axis of the free-standing non-planar polycrystalline CVD synthetic diamond component;

wherein the free-standing non-planar polycrystalline CVD synthetic diamond component has a thickness of no more than 100 ?m;
and

wherein the component further comprises one or more of the following characteristics:
a silicon concentration as measured by secondary ion mass spectrometry of no more than 1017 atoms cm?3;

a difference in silicon concentration between the nucleation face and the growth face of the free-standing non-planar polycrystalline
CVD synthetic diamond component of no more than 1017 atoms cm?3;

no detectable silicon carbide at the nucleation face of the free-standing non-planar polycrystalline CVD synthetic diamond
component; and

a detectable level of a refractory metal carbide at the nucleation face of the free-standing non-planar polycrystalline CVD
synthetic diamond component.

US Pat. No. 9,977,149

SYNTHETIC DIAMOND OPTICAL ELEMENTS

Element Six Technologies ...

1. An optical element comprising:synthetic diamond material; and
a flattened lens surface structure in the form of a zone plate, Fresnel lens, or aspherical lens formed directly in at least one surface of the synthetic diamond material,
wherein the synthetic diamond material has an absorption coefficient measured at room temperature of ?0.5 cm?1 at a wavelength of 10.6 ?m, and
wherein the synthetic diamond material has a laser induced damage threshold meeting one or both of the following characteristics:
the laser induced damage threshold is at least 30 Jcm?2 measured using a pulsed laser at a wavelength of 10.6 ?m with a pulse duration of 100 ns and a pulse repetition frequency in a range 1 to 10 Hz; and
the laser induced damage threshold is at least 1 MW/cm2 measured using a continuous wave laser at a wavelength of 10.6 ?m.

US Pat. No. 9,909,209

LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAMOND WINDOW

ELEMENT SIX TECHNOLOGIES ...

1. A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising:
a largest linear dimension equal to or greater than 125 mm;
a thickness equal to or greater than 200 ?m; and
one or both of the following characteristics measured at room temperature (nominally 298 K) over at least a central area of
the polycrystalline CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline
CVD diamond wafer, and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond
wafer:

a dielectric loss coefficient at 145 GHz, of tan ??5×10?5; and

a thermal conductivity of no less than 1900 Wm?1K?1.

US Pat. No. 9,816,202

SINGLE CRYSTAL DIAMOND

Element Six Technologies ...

1. A (001) single crystal CVD diamond plate having major surfaces on opposite sides thereof bounded by {100} side surfaces,
each major surface having at least one linear dimension exceeding 10 mm.

US Pat. No. 9,720,133

LARGE AREA OPTICAL QUALITY SYNTHETIC POLYCRYSTALLINE DIAMOND WINDOW

Element Six Technologies ...

1. A polycrystalline chemical vapour deposited (CVD) diamond wafer comprising:
a largest linear dimension equal to or greater than 70 mm;
a thickness equal to or greater than 1.3 mm; and
the following characteristics measured at room temperature (nominally 298 K) over at least a central area of the polycrystalline
CVD diamond wafer, said central area being circular, centred on a central point of the polycrystalline CVD diamond wafer,
and having a diameter of at least 70% of the largest linear dimension of the polycrystalline CVD diamond wafer:

a dielectric loss coefficient at 145 GHz, of tan ??2×10?5; and

a thermal conductivity of no less than 1900 Wm?1K?1.

US Pat. No. 9,682,864

DISLOCATION ENGINEERING IN SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL

Element Six Technologies ...

1. A single crystal CVD synthetic diamond layer comprising a non-parallel dislocation array, wherein the non-parallel dislocation
array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic
cross-sectional view or under luminescent conditions, wherein the layer of single crystal CVD synthetic diamond has a thickness
equal to or greater than 1 ?m, wherein the non-parallel dislocation array extends over a volume forming at least 30% of a
total volume of the single crystal CVD synthetic diamond layer, and wherein a direction in which a dislocation propagates
is measured in terms of an average direction over at least 70% of a total length of the dislocation, wherein the non-parallel
dislocation array comprises a first set of dislocations propagating in a first direction through the single crystal CVD synthetic
diamond layer and a second set of dislocations propagating in a second direction through the single crystal CVD synthetic
diamond layer, and wherein an angle between the first and second directions lies in the range of 40° to 100° as viewed in
an X-ray topographic cross-sectional view or under luminescent conditions.

US Pat. No. 10,107,874

SENSOR COMPRISING A PIEZOMAGNETIC OR PIEZOELECTRIC ELEMENT ON A DIAMOND SUBSTRATE WITH A COLOUR CENTRE

Element Six Technologies ...

1. A sensor comprising a first diamond substrate with at least one colour centre, wherein the sensor further comprises a first piezomagnetic or piezoelectric primary element, which primary element is arranged to interact with the colour centre(s) of the first diamond substrate solely by means of either a stray electric field or stray magnetic field produced by the primary element.

US Pat. No. 10,191,190

SYNTHETIC DIAMOND OPTICAL MIRRORS

ELEMENT SIX TECHNOLOGIES ...

1. A mirror for use in high power optical applications, the mirror comprising:a support plate comprising a synthetic diamond material; and
a reflective coating disposed over the support plate,
wherein the reflective coating comprises a bonding layer of carbide forming material selected from any of W, Cr, or Ti, which bonds the reflective coating to the synthetic diamond material in the support plate, a reflective metal layer disposed over the bonding layer, and one or more layers of dielectric material disposed over the reflective metal layer,
wherein the bonding layer and the reflective metal layer together have a total thickness in a range 50 nm to 10 ?m with the reflective metal layer having a thickness of no more than 5 ?m, and
wherein the support plate and the reflective coating are configured such that the mirror has a reflectivity of at least 99% at an operational wavelength of the mirror,
wherein the bonding layer and the reflective metal layer are formed of different materials, and
wherein the operational wavelength is one of 10.6 ?m, 1.06 ?m, 532 nm, 355 nm, or 266 nm.

US Pat. No. 10,214,835

POST-SYNTHESIS PROCESSING OF DIAMOND AND RELATED SUPER-HARD MATERIALS

Element Six Technologies ...

1. A method of processing a super-hard material having a Vickers hardness of no less than 2000 kg/mm2, the method comprising:(a) forming a surface of the super-hard material to have a first surface profile within a first root mean square deviation from a smooth target surface profile, said first root mean square deviation being no more than 5 ?m;
(b) analysing said surface of the super-hard material to detect a plurality of protruding regions on said surface; and
(c) selectively processing over a first protruding region on the surface of the super-hard material and, subsequent to selectively processing over the first protruding region, selectively processing over a second protruding region on the surface of the super-hard material to form a second surface profile within a second root mean square deviation from the smooth target surface profile, said second root mean square deviation being no more than 100 nm, wherein the surface of the super-hard material has at least one dimension of at least 10 mm and wherein the selective processing of each protruding region is performed over an area smaller than the area of the surface of the super-hard material;
wherein step (b) comprises calculating an amount of processing at each of the plurality of protruding regions required to form the second surface profile, and
wherein step (c) comprises applying said calculated amount of processing at each of the plurality of protruding regions to form the second surface profile.
US Pat. No. 10,125,434

OPTICAL QUALITY DIAMOND MATERIAL

Element Six Technologies ...

1. A CVD single crystal diamond material comprising:a low optical birefringence, indicative of low strain, such that when a sample of the material is prepared as an optical plate having a thickness of at least 0.5 mm and measured at room temperature, nominally 20° C., over an area of at least 1.3 mm×1.3 mm, |sin ?|, the modulus of the sine of the phase shift, for at least 98% of the measured area of the sample remains in first order, such that ? does not exceed ?/2, and |sin ?| does not exceed 0.9.

US Pat. No. 10,240,254

METHOD OF FABRICATING PLATES OF SUPER-HARD MATERIAL USING A COLLIMATED CUTTING BEAM

Element Six Technologies ...

1. A method of fabricating a plate of synthetic CVD diamond, the method comprising:providing a substrate have a lateral dimension of at least 40 mm;
growing a layer of synthetic CVD diamond material on the substrate using a chemical vapour deposition process; and
slicing one or more plates of synthetic CVD diamond material from the substrate using a collimated cutting beam, the or each plate of synthetic CVD diamond material having a lateral dimension of at least 40 mm, wherein the collimated cutting beam is collimated with a half angle divergence of no more than 5 degrees.

US Pat. No. 10,273,598

SYNTHETIC CVD DIAMOND

Element Six Technologies ...

1. Synthetic CVD diamond material comprising single substitutional nitrogen (Ns0) at a concentration of greater than about 0.5 ppm and having a total integrated absorption in the visible range from 350 nm to 750 nm the synthetic CVD diamond material having a low concentration of defects other than Ns0 that absorb in the visible range from 350 nm to 750 nm,wherein at least about 85% of the integrated absorption in the visible range from 350 nm to 750 nm is attributable to Ns0.