US Pat. No. 9,603,195

SUBSTRATE HEAT TREATMENT APPARATUS

CANON ANELVA CORPORATION,...

1. A substrate heat treatment apparatus which performs heat treatment on a substrate in a vacuum processing chamber, comprising:
a C-shaped susceptor including a C shape portion in which an opening portion is formed in a circumferential direction of an
annular shape, and a claw portion capable of supporting the substrate which claw portion is formed inside the C shape portion;

a substrate holding portion configured to hold the substrate, wherein the substrate holding portion includes: a substrate
holding portion base; a placement portion which has a portion capable of supporting the substrate and is arranged at a center
of the substrate holding portion base and has substantially a same size as a size of the substrate; and a susceptor support
portion having an annular recessed portion configured to support the C-shaped susceptor;

a substrate stage formed separately from the substrate holding portion, wherein the substrate holding portion is arranged
on the substrate stage;

a heating unit, including a heat radiation surface at a position above the substrate stage at which the heat radiation surface
faces the placement portion, configured to heat the substrate placed on the placement portion by heat from the heat radiation
surface;

a moving unit configured to move the substrate stage to set the placement portion at a predetermined position with respect
to the heat radiation surface;

a lift portion configured to come into contact with a lower surface of the susceptor at a substrate acceptance position and
support the susceptor in a state in which the susceptor is spaced apart from the susceptor support portion; and

a complementary portion formed separately from the susceptor support portion, engaged with the susceptor support portion,
and configured to complement the opening portion of the susceptor such that the complementary portion and the susceptor are
in an annular shape in a state in which the susceptor support portion supports the susceptor,

wherein a recess portion, which is configured to be engaged with the claw portion, is formed in a peripheral portion of the
placement portion,

wherein when the substrate is placed on the placement portion and the placement portion is located at the predetermined position
with respect to the heat radiation surface, the susceptor forms the annular shape together with the complementary portion
to surround a peripheral portion of the substrate, and an inner surface of the substrate holding portion base is configured
to surround an outer surface of the C-shaped susceptor and an outer surface of the complementary portion.

US Pat. No. 9,603,231

PROCESSING APPARATUS

Canon Anelva Corporation,...

1. A processing apparatus that processes a substrate, the processing apparatus comprising:
a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed;
a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an
outer space;

a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the
processing space from the outer space together with the first partitioning member; and

a matching device attached to the first partitioning member and situated above the second partitioning member,
wherein the first partitioning member has an attachment surface around the opening, the attachment surface facing a space
which a lower surface of the ceiling portion faces,

wherein the second partitioning member has a portion disposed underneath and facing the attachment surface from below the
attachment surface, the second partitioning member being attached to the first partitioning member by attaching the portion
of the second partitioning member from below to the attachment surface of the first partitioning member, and wherein

the processing apparatus is configured so that the second partitioning member can be removed from the first partitioning member,
without removing the matching device, by moving the second partitioning member toward the space.

US Pat. No. 9,697,998

MASS SPECTROMETER

CANON ANELVA CORPORATION,...

1. A mass spectrometer, comprising:
an ionization unit configured to ionize an analyte gas;
a filter unit configured to allow passage of only a target ion which is a component of the analyte gas ionized in the ionization
unit and which has a specific mass-to-charge ratio; and

an ion detection unit configured to detect an ion detection value based on the target ion having passed through the filter
unit,

wherein the ion detection unit comprises:
a Faraday electrode, comprising:
an electrode portion disposed along a direction of a centerline of the filter unit; and
a bottom electrode provided at a position downstream of the electrode portion in a flow of the target ion so as to intersect
with the centerline, the electrode portion and the bottom electrode being connected to each other,

a secondary electron multiplier provided to face the electrode portion with the centerline located therebetween, and
a blocking portion connected to the bottom electrode and configured to block a photoelectron and reflected light traveling
toward the secondary electron multiplier.

US Pat. No. 9,053,926

CYCLICAL PHYSICAL VAPOR DEPOSITION OF DIELECTRIC LAYERS

International Business Ma...

1. A method of forming a dielectric layer, the method comprising:
determining a desired thickness of the dielectric layer;
forming a first dielectric sub-layer having a thickness less than the desired thickness, wherein forming the first dielectric
sub-layer comprises depositing a first layer of metal atoms above an oxidized interfacial layer of a substrate using a physical
vapor deposition process and oxidizing the first layer of metal atoms;

forming n additional dielectric sub-layers, each of which having a thickness less than the desired thickness, above the first
dielectric sub-layer so that a combined thickness of all dielectric sub-layers is approximately equal to the desired thickness,
wherein n is a number greater than 1 and each of the additional dielectric sub-layers is formed by depositing an additional
layer of metal atoms above the preceding dielectric sub-layer using a physical vapor deposition process and oxidizing the
additional layer of metal atoms, and wherein at least one of the additional layer of metal atoms comprises a second metal
different than the first layer of metal atoms; and

tuning the overall conductivity of the dielectric layer by increasing or decreasing the oxygen content of the n additional
dielectric sub-layers through the oxidization process.

US Pat. No. 9,383,284

DIAPHRAGM-TYPE PRESSURE GAUGE

CANON ANELVA CORPORATION,...

1. A diaphragm-type pressure gauge, comprising:
a first sensor configured to measure a pressure in a first pressure range;
a second sensor configured to measure a pressure in a second pressure range having an upper limit on a high pressure side
relative to the first pressure range and an overlapping range with the first pressure range, each of said first sensor and
said second sensor being configured to measure a pressure relative to a reference pressure in a reference pressure chamber;
and

a computation unit configured to calculate a pressure value corresponding to outputs from said first sensor and said second
sensor,

wherein when said first sensor and said second sensor perform detection in the overlapping range, said computation unit calculates
a first pressure value corresponding to a signal output from said first sensor and a second pressure value corresponding to
a signal output from said second sensor, and calculates a signal value which is a value of a signal to be output from said
second sensor and which corresponds to a difference between the first pressure value and the second pressure value, and

wherein when measuring a pressure in the second pressure range which is higher than an upper limit of the first pressure range,
said computation unit outputs a pressure value corresponding to a signal obtained by adding the signal value to the signal
output from said second sensor.

US Pat. No. 9,309,606

FILM FORMING METHOD, VACUUM PROCESSING APPARATUS, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ILLUMINATING DEVICE

Canon Anelva Corporation,...

1. A film forming method of forming an epitaxial film of a semiconductor thin film of a wurtzite structure by sputtering on
a substrate for epitaxial growth by using a vacuum processing apparatus including:
a vacuum chamber capable of vacuum pumping;
a substrate holder for supporting the substrate for epitaxial growth; and
a heater capable of heating the substrate for epitaxial growth held by the substrate holder to a desired temperature,
wherein the epitaxial film of the semiconductor thin film of the wurtzite structure is formed on the substrate for epitaxial
growth in a state where the substrate for epitaxial growth held by the substrate holder is held away from a substrate facing
surface of the heater by 0.5-5 mm, and the epitaxial film having +c polarity,

wherein the substrate holder holds the substrate for epitaxial growth in a state where the substrate holder is in contact
with a surface of the substrate for epitaxial growth on a lower side in a direction of gravity.

US Pat. No. 9,607,868

SUBSTRATE HEAT TREATMENT APPARATUS

CANON ANELVA CORPORATION,...

1. A substrate heat treatment apparatus to perform heat treatment for a substrate comprising:
a substrate supporting plate that is a ring-shaped plate capable of supporting the substrate;
a lifting mechanism configured to hold the substrate supporting plate and raise and lower the substrate supporting plate;
a linking member linking the substrate supporting plate and the lifting mechanism, the linking member having lower thermal
conductivity than that of the substrate supporting plate; and

a heating means for heating the substrate supported by the substrate supporting plate from above the substrate supporting
plate in the gravity direction,

wherein the linking member is a member different from both the substrate supporting plate and the lifting mechanism,
the lifting mechanism includes a raising and lowering means for raising and lowering the substrate supporting plate between
a first position close to the heating means and a second position distant from the heating means,

the linking member is a ball,
the substrate supporting plate includes a first groove provided in a lower surface that is a part of the substrate supporting
plate in the gravity direction,

the lifting mechanism includes a substrate supporting plate holding portion that is a ring-shaped plate capable of holding
the substrate supporting plate and a second groove provided in an upper surface that is part of the substrate supporting plate
holding portion in the gravity direction,

a longitudinal direction of the first groove coincides with a radial direction of the substrate supporting plate,
a longitudinal direction of the second groove coincides with a radial direction of the substrate supporting plate holding
portion, and

the lifting mechanism holds the substrate supporting plate with the ball sandwiched between the first and second grooves.

US Pat. No. 9,593,412

DEPOSITION APPARATUS AND ELECTRONIC DEVICE MANUFACTURING METHOD

Canon Anelva Corporation,...

1. An electronic device manufacturing method using a deposition apparatus including:
a processing chamber configured to perform deposition processing;
an exhaust chamber connected to the processing chamber;
an exhaust device which evacuates the processing chamber via the exhaust chamber;
a substrate holder which is disposed in the processing chamber and supports a substrate;
a target holder configured to hold a target which is disposed in the processing chamber;
a shutter configured to move to a shielding state in which the shutter shield a gap between the substrate holder and the target
holder, or a retracted state in which the shutter is retracted from the gap between the substrate holder and the target holder;

a driving unit configured to drive the shutter; and
a shutter storage unit which has an opening portion through which the shutter is extended to the processing chamber or retracted
from the processing chamber, wherein a portion of the shutter storage unit other than the opening portion is sealed;

wherein an exhaust port is formed between a periphery of the opening portion of the shutter storage unit and an inner wall
of the exhaust chamber;

the shutter storage unit is placed in the exhaust chamber such that the exhaust chamber is adjacent to the processing chamber
and the exhaust chamber communicates with the processing chamber via the exhaust port, and an exhaust region is formed outside
the shutter storage unit and inside the exhaust chamber and the exhaust region communicates with the exhaust device, and a
gas introduced in the processing chamber is evacuated by the exhaust device via the exhaust region, and

the shutter, when in the retracted state, is retracted from the processing chamber into the shutter storage unit,
the method comprising:
(a) evacuating, by the exhaust device, the processing chamber via the exhaust port and the exhaust region, and controlling
the processing chamber at a predetermined pressure;

(b) setting, by driving the driving unit, the shutter from the retracted state to the shielding state, the shutter having
been stored in the shutter storage unit in such a manner as to be separated from the exhaust chamber;

(c) depositing a film from the target after (b) while maintaining the shielding state; and
(d) setting the shutter in the retracted state by the driving unit after (c), and depositing a film from the target on the
substrate supported by the substrate holder.

US Pat. No. 9,422,623

ION BEAM GENERATOR AND ION BEAM PLASMA PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. An ion beam generator comprising:
a chamber;
a unit configured to generate plasma in the chamber;
an extraction unit provided opposed to a predetermined wall of the chamber, and configured to extract ions from the plasma;
a member configured to adjust plasma density in the chamber, and be movable in the chamber in a first direction from the wall
toward the extraction unit and in a second direction from the extraction unit toward the wall;

a second member provided adjacent to the member and configured to adjust the plasma density in the chamber, and be movable
in the chamber in the first direction and the second direction independently of the member;

a seal member configured to seal a gap between the wall and a sidewall of the member, and having a slidable relationship with
the member; and

a shield configured to at least partially cover portions of the sidewall of the member and the seal member which slide over
each other with a movement of the member, and having at least a portion extending from the wall toward the extraction unit,

wherein the member is a cylindrical member,
wherein the second member is an annular member provided surrounding the cylindrical member, and
wherein the member and the second member are provided coaxially with each other.

US Pat. No. 9,346,171

SUBSTRATE TRANSPORT APPARATUS, AND SYSTEM AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

CANON ANELVA CORPORATION,...

1. A substrate transport apparatus comprising:
a first substrate holder and a second substrate holder capable of respectively holding substrates;
a first pair of driven arms comprising a first driven arm and a second driven arm, each of which has a first end, which is
coupled to said first substrate holder, and a second end;

a second pair of driven arms comprising a third driven arm and a fourth driven arm, each of which has a first end, which is
coupled to said second substrate holder, and a second end;

a first drive arm including, at a first end, a first coupling portion which is coupled to the second end of said first driven
arm, and at a second end, a second coupling portion which is coupled to the second end of said fourth driven arm;

a second drive arm including, at a first end, a third coupling portion which is coupled to the second end of said second driven
arm, and at a second end, a fourth coupling portion which is coupled to the second end of said third driven arm;

a first drive shaft to which said first drive arm is rotatably coupled; and
a second drive shaft which is coaxial with said first drive shaft, and to which said second drive arm is rotatably coupled,
independently of said first drive shaft,

wherein, in a case where said first drive arm rotates in a first rotation direction and said second drive arm rotates in a
second rotation direction opposite to the first rotation direction, one substrate holder of said first substrate holder and
said second substrate holder advances in a first direction such that the one substrate holder separates from a rotation axis
of said first drive shaft, and the other substrate holder of said first substrate holder and said second substrate holder
retreats in a second direction such that the other substrate holder returns to the rotation axis of said first drive shaft,

a first direction axis, defined by a straight line which connects said first coupling portion and said second coupling portion
to each other, is spaced apart from the rotation axis of said first drive shaft by a first distance, and

a second direction axis, defined by a straight line which connects said third coupling portion and said fourth coupling portion
to each other, is spaced apart from a rotation axis of said second drive shaft by a second distance.

US Pat. No. 9,322,095

FILM-FORMING APPARATUS

CANON ANELVA CORPORATION,...

1. A film-forming apparatus comprising:
a plurality of target electrodes each having an attachment surface to which a target can be attached;
a substrate holder for holding a substrate;
a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a
plurality of openings;

a shield member provided between the target electrodes and the first shutter member, the shield member having openings opposing
the attachment surfaces;

first separating walls provided on a surface of the first shutter member, which faces the shield member, so as to face the
shield member; and

second separating walls provided on a surface of the shield member, which faces the first shutter member,
wherein the first separating walls are provided so as to sandwich each of the plurality of openings of the first shutter member,
and

wherein the first shutter member is rotated about a rotation axis to change the target to be used for film forming while a
distance between the first shutter member and the shield member is kept constant, such that the first separating walls are
positioned close to respective ones of the second separating walls and gaps in a circumferential direction of the rotation
are formed between the first separating walls and the respective ones of the second separating walls, the gaps being effective
to prevent atoms from the targets passing through the gaps.

US Pat. No. 9,200,362

SUBSTRATE HOLDER STOCKER DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE HOLDER MOVING METHOD USING THE SUBSTRATE HOLDER STOCKER DEVICE

Canon Anelva Corporation,...

1. A substrate holder stocker device for storing substrate holders to be transferred in a process chamber that performs a
vacuum processing on a substrate, comprising:
a chamber which is connected with the process chamber;
a first movable holding unit which is provided in the chamber and configured to allow holding of a plurality of the substrate
holders side by side in a first direction in a plane intersecting a direction of gravitational force, and which can move back
and forth in the first direction;

a second movable holding unit which is provided parallel to the first movable holding unit in the chamber and configured to
allow holding of a plurality of the substrate holders side by side in the first direction, and which can move back and forth
in the first direction; and

two or more inter-table transfer units, each of which is provided in the chamber and configured to move one of the substrate
holders held at a predetermined holding position of one of the first and the second movable holding units in a horizontal
direction orthogonal to the first direction in the plane, so as to make an other of the first and the second movable holding
units hold the one of the substrate holders when the first and the second movable holding units are stopped at predetermined
positions,

wherein the first movable holding unit and the second movable holding unit are configured to move in parallel and independently
along the first direction in a state where the first movable holding unit has a portion overlapping the second movable holding
unit in the horizontal direction orthogonal to the first direction in the plane, and

wherein the two or more inter-table transfer units are configured to be located below the overlapping portion in the direction
of gravitational force.

US Pat. No. 9,175,377

FILM FORMING APPARATUS AND FILM FORMING METHOD

Canon Anelva Corporation,...

1. A film forming apparatus for forming a film on a process-target substrate by sputtering a target containing a film forming
material using a sputtering gas and causing at least one kind of reactive gas and the film forming material to react with
each other in a vacuum chamber, the film forming apparatus comprising:
a shield board surrounding a sputtering space between the process-target substrate and the target facing each other in the
vacuum chamber;

a gas supply unit for supplying a mixed gas containing the reactive gas and the sputtering gas to the vacuum chamber in forming
the film, the gas supply unit including a first gas introduction unit for introducing the mixed gas into the sputtering space
surrounded by the shield board and a second gas introduction unit for introducing the mixed gas into a sputtering outside
space between an inner wall of the vacuum chamber and the shield board, the second gas introduction unit branching off from
the first gas introduction unit;

a valve, provided on the second gas introduction unit, for adjusting a flow rate of the mixed gas to be introduced into the
sputtering outside space by the second gas introduction unit against a flow rate of the mixed gas to be introduced into the
sputtering space by the first gas introduction unit;

a detection unit for detecting a first signal value indicating a first pressure in the sputtering space before a recovery
process for the shield board and a second signal value indicating a second pressure in the sputtering space after the recovery
process for the shield board; and

a controller configured to adjust a valve opening of the valve to make the second signal value equal to the first signal value.

US Pat. No. 9,127,355

SUBSTRATE PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. A substrate processing apparatus comprising:
a chamber;
an openable and closable lid provided on an opening of the chamber;
a ceiling shield provided on the lid at an interior side of the chamber;
an attachment means configured to attach the ceiling shield to the lid;
a side wall shield provided inside the chamber; and
an elastic member provided between the lid and the ceiling shield,
wherein, when the lid is in a closed state, the ceiling shield is pushed against the side wall shield by the elastic member
to form a continuous shield covering the lid and a side wall of the chamber and, when the lid is in an open state, the ceiling
shield and the side wall shield are separated from each other.

US Pat. No. 9,601,688

METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT AND METHOD OF PROCESSING MAGNETORESISTIVE FILM

Canon Anelva Corporation,...

1. A method of manufacturing a magnetoresistive element including a magnetoresistive film, comprising:
removing a portion of the magnetoresistive film having a hard mask formed thereon, in a thickness direction of the magnetoresistive
film, by ion beam etching, and at the same time forming a protective film by depositing a substance removed from the magnetoresistive
film by the ion beam etching on a sidewall of the magnetoresistive film having the hard mask formed thereon; and

in a state where the protective film protects the sidewall, removing the magnetoresistive film having the hard mask formed
thereon by reactive ion etching by using a gas containing a carbon atom, a hydrogen atom, and an oxygen atom.

US Pat. No. 9,147,742

HEAT TREATMENT APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

CANON ANELVA CORPORATION,...

1. A heat treatment apparatus including a vacuum vessel, a substrate stage which is constructed in the vacuum vessel and holds
a substrate mounted thereon, a heating unit which is constructed so as to face the substrate stage in the vacuum vessel and
is constructed to heat the substrate, and an exhaust unit constructed to evacuate, via an exhaust port, the vacuum vessel
having a first region in which the heating unit is constructed and a second region in which the exhaust port communicating
with the exhaust unit and the substrate stage capable of moving by a lift unit are constructed comprising:
a first reflector constructed in the second region to cover a vertical upper part of an inlet of the exhaust port while being
spaced apart from the exhaust port, and shield heat output from the heating unit, and

a second reflector constructed to partially surround the exhaust port in a direction perpendicular to an axis of the exhaust
port, and shield the heat output from the heating unit, wherein, in a case where the heating unit heats the substrate held
on the substrate stage, the substrate stage is moved by the lift unit in a direction toward the heating unit and the substrate
stage is positioned at a position where heat output from the heating unit is shielded by the substrate stage in the first
region, and

wherein, in a case where the heating unit completes the heating of the substrate, the substrate stage is moved by the lift
unit in a direction away from the heating unit, and the first reflector and the second reflector shield the heat output from
the heating unit in the second region so as to prevent the heat output from the heating unit from directly flowing into the
exhaust port,

wherein a member is constructed between the first region and the second region, the member is constructed to have an opening
of diameter which is equal to or greater than a diameter of the substrate stage, and the member is constructed so as to project
from a side wall of the vacuum vessel into an internal space of the vacuum vessel,

wherein, in a case where the substrate stage is moved by the lift unit in a direction toward the heating unit and the substrate
stage is positioned at the opening, the first region and the second region are separated by the substrate stage and the member,
and a heating chamber is configured by the separated first region,

wherein the second reflector comprises a plurality of reflector members, and the plurality of reflector members includes:
a first reflector member which is provided in a flow channel, through which a heating chamber in which the substrate is heated
by the heating unit communicates with the exhaust port, to face a first direction defined from the heating unit to the exhaust
port;

a second reflector member which is provided between the exhaust port and one inner wall surface of the vacuum vessel to face
a second direction perpendicular to the first direction and a direction in which said first reflector is arranged; and

a third reflector member which is provided between the exhaust port and the other inner wall surface of the vacuum vessel
to face a third direction perpendicular to the first direction and the direction in which said first reflector is arranged,
and

wherein the first reflector is located within a space defined by the second reflector.

US Pat. No. 9,788,464

POWER SUPPLY DEVICE AND VACUUM PROCESSING APPARATUS USING THE SAME

CANON ANELVA CORPORATION,...

1. A power supply device comprising:
a substrate holder capable of holding a substrate and having a cooling channel;
a column connected to the substrate holder and including a first conductive column portion, second conductive column portion,
and a first insulating member having an outer cylindrical surface and arranged between the first conductive column portion
and the second conductive column portion so as to connect the first conductive column portion and the second conductive column
portion, the outer cylindrical surface having a first opening and a second opening which communicate with the cooling channel;

a housing rotatably supporting the column and including a first conductive housing portion, a second conductive housing portion,
and a second insulating member having an inner cylindrical surface facing the outer cylindrical surface and arranged between
the first conductive housing portion and the second conductive housing portion so as to connect the first conductive housing
portion and the second conductive housing portion;

a first conductive rotary joint configured to supply a first voltage from the first conductive housing portion to the first
conductive column portion;

a second conductive rotary joint configured to supply a second voltage from the second conductive housing portion to the second
conductive column portion, the second conductive rotary joint being insulated from the first conductive rotary joint;

a first power supply member electrically connected to the first conductive column portion and configured to supply the first
voltage to the substrate holder;

a second power supply member electrically connected to the second conductive column portion and configured to supply the second
voltage to the substrate holder; and

an insulating seal portion including a first annular member fixed around the outer cylindrical surface of the first insulating
member, and a second annular member fixed inside the inner cylindrical surface of the second insulating member, the first
annular member being in slidable contact with the second annular member,

wherein a first space capable of flowing a coolant is defined by at least the first conductive rotary joint, the insulating
seal portion, the outer cylindrical surface of the first insulating member and the inner cylindrical surface of the second
insulating member such that the first opening faces the first space so as to communicate the first space with the cooling
channel, and

wherein a second space capable of flowing the coolant is defined by at least the second conductive rotary joint, the insulating
seal portion, the outer cylindrical surface of the first insulating member and the inner cylindrical surface of the second
insulating member such that the second opening faces the second space so as to communicate the second space with the cooling
channel.

US Pat. No. 9,422,619

PROCESSING APPARATUS AND SHIELD

CANON ANELVA CORPORATION,...

1. A processing apparatus comprising: a substrate holding portion; a shield arranged so as to surround a substrate when the
substrate holding portion holds the substrate; and a shield holding portion configured to hold the shield by a magnetic force,
wherein the shield includes a plurality of first magnets each having a magnetic pole of a first polarity facing the shield
holding portion, and a plurality of second magnets each having a magnetic pole of a second polarity facing the shield holding
portion, the plurality of first magnets and the plurality of second magnets being arranged at positions symmetrical with respect
to a center of the shield,

the shield holding portion includes a plurality of third magnets each having a magnetic pole of first polarity facing the
shield so as to generate an attraction force with respect to a corresponding one of the plurality of second magnets, and a
plurality of fourth magnets each having a magnetic pole of the second polarity facing the shield so as to generate the attraction
force with respect to a corresponding one of the plurality of first magnets, the plurality of third magnets and the plurality
of fourth magnets being arranged at positions symmetrical with respect to the center of the shield holding portion, and

the shield holding portion holds the shield so as to allow deformation of the shield by heat, and a center of the shield is
located at the center of the shield holding portion by the magnetic forces acting between the plurality of first magnets and
the plurality of fourth magnets and the magnetic forces acting between the plurality of second magnets and the plurality of
third magnets.

US Pat. No. 9,058,962

MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS

Canon Anelva Corporation,...

1. A magnet unit which is arranged on a rear surface of a rectangular cathode electrode supporting a rectangular target, the
magnet unit comprising:
a rectangular yoke plate which is made of an antiferromagnetic plate material and is arranged on the rear surface of the cathode
electrode;

a first magnet group arranged along a periphery of the rectangular yoke plate;
a second magnet group arranged at a center portion of the rectangular yoke plate; and
a third magnet group arranged between said first magnet group and said second magnet group so as to surround a portion of
said second magnet group,

wherein said first magnet group consists of a first magnet which is arranged at both end portions on a plate surface of the
rectangular yoke plate and is provided to stand upright on the plate surface of the rectangular yoke plate along a vertical
direction and is configured to consist of a first magnetic pole on a surface facing the plate surface of the rectangular yoke
plate and a second magnetic pole having a polarity opposite to a polarity of the first magnetic pole on a surface facing away
from the plate surface of the rectangular yoke plate,

wherein said second magnet group consists of a second magnet which is arranged at a center portion of the plate surface of
the rectangular yoke plate and is provided to stand upright on the plate surface of the rectangular yoke plate along a vertical
direction and is configured to consist of a third magnetic pole having a polarity opposite to a polarity of the first magnetic
pole on a surface facing the plate surface of the rectangular yoke plate and a fourth magnetic pole having a polarity opposite
to a polarity of the second magnetic pole on a surface facing away from the plate surface of the rectangular yoke plate, and

wherein said third magnet group consists of:
a third magnet which is arranged to stand upright between said first magnet and said second magnet along a vertical direction
with respect to the plate surface of the rectangular yoke plate, is configured to consist of a fifth magnetic pole in a portion
facing the second magnetic pole of said first magnet and a sixth magnetic pole having a polarity opposite to a polarity of
the fifth magnetic pole in a portion facing the third magnetic pole of said second magnet, and is magnetized so that a line
which connects the fifth magnetic pole and the sixth magnetic pole is tilted with respect to a surface parallel to the plate
surface of the rectangular yoke plate; and

a fourth magnet which is arranged to stand upright between said first magnet and said second magnet along a vertical direction
with respect to the plate surface of the rectangular yoke plate, is configured to consist of a seventh magnetic pole in a
portion facing the first magnetic pole of said first magnet and an eighth magnetic pole having a polarity opposite to a polarity
of the seventh magnetic pole in a portion facing the fourth magnetic pole of said second magnet, and is magnetized so that
a line which connects the seventh magnetic pole and the eighth magnetic pole is tilted with respect to a surface parallel
to the plate surface of the rectangular yoke plate, and

wherein said third magnet and said fourth magnet are alternately arranged so as to surround a portion of said second magnet
group in the plate surface of the rectangular yoke plate.

US Pat. No. 9,607,867

SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD

Canon Anelva Corporation,...

1. A substrate processing device comprising:
a chamber with an exhaust unit configured to evacuate inside the chamber;
a substrate holder provided inside the chamber and including a substrate mounting surface configured to cool a substrate;
a shield provided inside the chamber and including a side wall portion provided to surround a lateral side of the substrate
mounting surface;

a shield cooling unit configured to cool the shield; and
a control device configured to control the shield cooling unit to cool the shield before the substrate is mounted on the substrate
mounting surface.

US Pat. No. 9,322,094

FILM-FORMING APPARATUS

CANON ANELVA CORPORATION,...

1. A film forming apparatus comprising:
a plurality of target electrodes respectively having attachment surfaces to which targets can be attached;
a substrate holder for holding a substrate at a position opposing the plurality of target electrodes;
a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a
plurality of openings that can oppose the attachment surfaces;

a shield member provided between the first shutter member and the plurality of target electrodes and having a number of openings
equal to the number of the target electrodes;

first separating walls provided on an upper surface of the first shutter member; and
second separating walls provided on a lower surface of the shield member, which faces the upper surface of the first shutter
member,

wherein the first shutter member is rotated about a rotation shaft to change the target to be used for film forming, such
that the first separating walls are positioned close to respective ones of the second separating walls and first gaps in a
circumferential direction of the rotation are formed between the first separating walls and the respective ones of the second
separating walls, the first gaps being effective to prevent atoms from the targets passing through the first gaps, the first
separating walls and the second separating walls extending radially about the rotation shaft, and

wherein a second gap between the upper surface of the first shutter member and the lower surface of the shield member widens
toward an outer perimeter of the first shutter member from a portion where adjacent target electrodes are closest, and the
second gap narrows toward a center of the first shutter member from the portion where the adjacent target electrodes are closest.

US Pat. No. 9,252,322

EPITAXIAL FILM FORMING METHOD, VACUUM PROCESSING APPARATUS, SEMICONDUCTOR LIGHT EMITTING ELEMENT MANUFACTURING METHOD, SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ILLUMINATING DEVICE

Canon Anelva Corporation,...

1. An epitaxial film forming method of epitaxially growing a Group III nitride semiconductor thin film by sputtering on an
?-Al2O3 substrate heated to a desired temperature by using a heater, the method comprising:
holding the ?-Al2O3 substrate away from a substrate facing surface of the heater by 0.5-5 mm; and

forming an epitaxial film of a Group III nitride semiconductor thin film by sputtering on the ?-Al2O3 substrate in a state of being held away from the substrate facing surface by 0.5-5 mm, the epitaxial film having +c polarity.

US Pat. No. 9,175,379

SPUTTER APPARATUS, CONTROL DEVICE FOR SPUTTER APPARATUS AND FILM FORMATION METHOD

Canon Anelva Corporation,...

1. A sputter apparatus to generate plasma by applying a predetermined voltage to a target holder and to thereby form a film
by sputtering a target held by the target holder comprising:
a process chamber;
a substrate holder provided inside the process chamber, having a substrate holding surface for holding a substrate, and configured
to be capable of rotating the substrate holding surface about a predetermined rotation axis;

rotational drive means for controlling rotation of the substrate holder;
substrate rotation angle detection means for detecting a rotation angle of the substrate holder;
a target holder provided inside the process chamber and configured to be capable of holding the target, the target holder
provided so that the rotation axis is located at a position different from a perpendicular line passing through the center
point of the target;

a shutter configured to switch between a first state where the substrate holding surface is exposed to the target holder and
a second state where the substrate holding surface is shut off from the target holder; and

control means for controlling the rotational drive means and the shutter, the control means being provided with a storage
unit,

wherein, provided that T seconds denotes a deposition time required to form a film thickness to be obtained in a targeted
deposition, the sputter apparatus is configured to be capable of performing X (X is an integer of 2 or larger) divisional
depositions to complete the targeted deposition, and

wherein the storage unit of the control means stores a control program, the control program executing the steps of:
controlling the rotational drive means so that the substrate holder is rotated at a fixed rotation speed;
controlling the shutter so that the first state is formed to start a first deposition of the divisional depositions, while
the substrate holder is being rotated at the rotation speed under a condition where the plasma is being generated;

controlling the shutter so that the second state is formed in T/X seconds after the start of the first divisional deposition,
while the substrate holder is being rotated at the rotation speed under the condition where the plasma is being generated;

controlling the shutter so that the first state is formed to start an n-th deposition of the divisional depositions when a
reference point set on the substrate holder arrives at a position rotated by (n?1)×360/X degrees (n is an integer of 2 to
X) from a position of the reference point located at the start of the targeted deposition, on the basis of a detection result
obtained by the substrate rotation angle detection means, while the substrate holder is being rotated at the rotation speed
under the condition where the plasma is being generated; and

controlling the shutter so that the second state is formed in T/X seconds after the start of the n-th divisional deposition,
while the substrate holder is being rotated at the rotation speed under the condition where the plasma is being generated.

US Pat. No. 9,421,478

REFRIGERATOR AND COLD TRAP

CANON ANELVA CORPORATION,...

1. A cold trap including a refrigerator, a trap vessel arranged between the refrigerator and a vacuum vessel, and a cold panel
arranged in the trap vessel and cooled by the refrigerator to trap gas molecules, the cold trap comprising a vibration sensor
configured to detect a vibration in the cold trap,
the refrigerator comprising:
a case;
a piston capable of reciprocally moving in the case so as to compress and expand a working medium;
a dynamic vibration absorber attached outside the case and configured to reduce the vibration when the piston is driven; and
a driving frequency adjustment unit configured to adjust a driving frequency of the piston to increase a vibration reduction
effect of the dynamic vibration absorber based on a signal from the vibration sensor,

wherein the driving frequency adjustment unit comprises:
a bandpass filter configured to process the signal from the vibration sensor;
an arithmetic processor configured to output a control signal to reduce the vibration based on the signal processed by the
bandpass filter; and

a driving unit configured to drive the piston at the driving frequency corresponding to the control signal from the arithmetic
processor.

US Pat. No. 9,721,747

GRID, METHOD OF MANUFACTURING THE SAME, AND ION BEAM PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. A plate-shaped grid provided with a hole, wherein
the grid is formed of a carbon-carbon composite including carbon fibers arranged in random directions along a planar direction
of the grid, and

the hole is formed in the grid so as to cut off the carbon fibers.

US Pat. No. 9,564,360

SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

CANON ANELVA CORPORATION,...

1. A substrate processing method of a substrate which has a recess portion on a surface and in which a deposition film is
formed on an opening portion of the recess portion, the deposition film including an upper deposition film on the surface
of the substrate, the upper deposition film including a protruding portion protruding from a side wall portion of the recess
portion toward an inside of the recess portion on the opening portion of the recess portion, the substrate processing method
comprising:
a first irradiation step of irradiating the protruding portion with a particle beam in a direction which forms a first angle
with a direction perpendicular to an in-plane direction of the substrate, to remove part of the protruding portion in a thickness
direction; and

a second irradiation step of, after the first irradiation step, irradiating the protruding portion with the particle beam
in a direction which is closer to perpendicular to the in-plane direction of the substrate than is the first angle and which
forms a second angle with the direction perpendicular to the in-plane direction of the substrate, to remove part of the protruding
portion that remains in the thickness direction.

US Pat. No. 9,373,491

MASS SPECTROMETER

CANON ANELVA CORPORATION,...

1. A mass spectrometer comprising:
an ionizer configured to ionize a measurement gas;
a filter configured to selectively pass therethrough an ion of a target gas having a predetermined mass-to-charge ratio among
components of the measurement gas ionized by the ionizer;

an ion detector configured to detect an ion detection value based on the ion of the target gas that passes through the filter;
a light detector configured to detect a light detection value based on vacuum ultraviolet light generated when the ionizer
ionizes the measurement gas; and

an arithmetic unit configured to calculate a partial pressure of the target gas by using the light detection value and the
ion detection value,

wherein the light detector comprises:
a vacuum ultraviolet light detector configured to detect a photoelectric current value according to the vacuum ultraviolet
light incident thereon; and

an ion blocking electrode configured to block ions from entering the vacuum ultraviolet light detector.

US Pat. No. 9,194,038

THIN FILM FORMING APPARATUS, THIN FILM FORMING METHOD, AND SHIELD COMPONENT

CANON ANELVA CORPORATION,...

1. A thin film forming apparatus comprising:
a vacuum chamber;
a substrate holder which can hold a substrate inside said vacuum chamber;
an electrode to which a target can be attached while being opposed to said substrate holder inside said vacuum chamber; and
a side-wall shield which faces a deposition space between the substrate and the target, and covers a side wall of said vacuum
chamber for preventing a film from adhering onto the side wall of said vacuum chamber,

wherein said side-wall shield extends from a position opposite to an end portion of the target toward a position opposite
to an end portion of the substrate,

wherein said side-wall shield formed at a side of the target has a first flat surface formed from the position opposite to
the end portion of the target toward the deposition space,

wherein said side-wall shield formed at a side of the substrate has a projection surface projecting from a side of the side
wall of said vacuum chamber toward the deposition space, and a second flat surface formed from the end portion of the substrate
toward the position opposite to the end portion of the substrate,

wherein the projection surface is continuous with the first flat surface in a direction from said electrode toward said substrate
holder, and the projection surface has a first curved surface having a radius of curvature of a cross-section of the projection
surface which decreases continuously from an infinitely large value of the first flat surface in the direction up to a predetermined
radius of curvature or a first curved surface having a radius of curvature of a cross-section of the projection surface which
decreases stepwise from an infinitely large value of the first flat surface in the direction up to a predetermined radius
of curvature,

wherein the projection surface has a second curved surface having a radius of curvature of a cross-section of the projection
surface which increases continuously from the predetermined radius of curvature up to an infinitely large value of the second
flat surface or a second curved surface having a radius of curvature of a cross-section of the projection surface which increases
stepwise from the predetermined radius of curvature up to an infinitely large value of the second flat surface, and

wherein the second curved surface is continuous with the first curved surface in a direction from the deposition space toward
the end portion of the substrate, and the second curved surface is continuous with the second flat surface.

US Pat. No. 9,121,099

VACUUM PROCESSING APPARATUS AND PROCESSING METHOD USING THE SAME

CANON ANELVA CORPORATION,...

1. A vacuum processing apparatus comprising:
a process chamber connecting to a vacuum pump;
a transporter, which is provided in the process chamber, to transport a plurality of substrates;
a gas supply unit, which is provided on the same side as respective surfaces to be processed of the substrates, the gas supply
unit having at least one flow control valve to supply process gas to process the substrates in the process chamber;

a target holder configured to support a target opposing the substrates, wherein the gas supply unit supplies the process gas
to the substrates from a side of the target facing toward the surfaces of the substrates, and

a detection sensor configured to detect a substrate interval between adjacent substrates out of the plurality of substrates;
and

a control device having a controller configured to control, based on the substrate interval detected by the detection sensor,
the at least flow control valve and a supply amount of the process gas to be supplied by the gas supply unit.

US Pat. No. 9,581,513

DIAPHRAGM-TYPE PRESSURE GAUGE

CANON ANELVA CORPORATION,...

1. A diaphragm-type pressure gauge which is attached to a vessel to be measured and measures a pressure by introducing a gas
inside the vessel, the gauge comprising:
a housing having a member separating an internal space of the housing into a first space and a second space, the first space
communicating with the vessel, and the gas being introduced into the first space; and

a sensor unit arranged in the housing, the sensor unit including an insulating substrate having a first surface and a second
surface opposing the first surface, a fixed electrode arranged on the first surface, a diaphragm electrode having a measurement
surface facing the fixed electrode and arranged parallel to an introduction direction of the gas, the fixed electrode and
the measurement surface facing an airtight reference pressure chamber formed between the insulating substrate and the diaphragm
electrode, the second surface facing the first space, a surface of the diaphragm electrode, which opposes the measurement
surface, facing the first space,

wherein the insulating substrate and the diaphragm electrode are arranged in the first space, a capacitor constituted by the
fixed electrode and the diaphragm electrode is connected to an electrode pad attached to the insulating substrate, the electrode
pad is connected to a conductive wiring in the first space, and the conductive wiring extends through the member from the
first space to the second space.

US Pat. No. 9,368,331

SPUTTERING APPARATUS

Canon Anelva Corporation,...

1. A sputtering apparatus comprising:
a substrate holding unit configured to hold a substrate;
a backing plate having a target mounting surface where to hold a target;
a power supply connected to the backing plate;
a magnet disposed on a side of the backing plate opposite to the target mounting surface of the backing plate;
a shield containing a magnetic material, being grounded, and surrounding the target mounting surface; and
a magnetic member located between the shield and the backing plate at an outer circumference of the target mounting surface,
and provided at a position not facing the magnet in a direction perpendicular to the target mounting surface.

US Pat. No. 9,312,102

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM

CANON ANELVA CORPORATION,...

1. An ion etching method of etching a substrate, arranged on a substrate holder, using an ion beam etching apparatus including
an ion source which emits an ion beam toward the substrate holder, a neutralizer which emits electrons toward the ion beam,
and a shutter capable of moving between a closed position at which the ion beam emitted by the ion source toward the substrate
holder is shielded, and an open position at which the ion beam emitted by the ion source toward the substrate holder is not
shielded,
the method comprising:
when the shutter moves from the closed position to the open position,
a first step of gradually decreasing an amount of the electrons emitted by the neutralizer while keeping an amount of the
ion beam emitted by the ion source constant; and then

a second step of gradually increasing the amount of the electrons emitted by the neutralizer while keeping the amount of the
ion beam emitted by the ion source to be equal to the amount of the ion beam emitted by the ion source in the first step;

wherein the ion source, the neutralizer and the shutter are arranged such that the electrons emitted by the neutralizer can
partially reach the substrate when the shutter is arranged at the closed position.

US Pat. No. 9,090,974

ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD

Canon Anelva Corporation,...

1. An electronic device manufacturing method using a sputtering apparatus including:
a target holder provided in a vacuum container and configured to hold a target to be used for deposition on a substrate;
a substrate holder configured to hold the substrate;
a first shield member arranged near the substrate holder and configured to set one of a closed state in which the substrate
holder is shielded from the target holder and an open state in which the substrate holder is opened to the target holder;

first opening/closing driving means for opening/closing-driving the first shield member to one of the open state and the closed
state;

a second shield member having a ring shape and installed on a surface of the substrate holder at an outer peripheral portion
of the substrate; and

driving means for moving the substrate holder to move the substrate holder with the second shield member being installed close
to or away from the first shield member in the closed state,

the first shield member having at least one first projecting portion extending in a direction of the second shield member
and having a ring shape, and

the second shield member having at least one second projecting portion extending in a direction of the first shield member
and having a ring shape,

the method comprising:
a first step of causing the driving means to move the substrate holder close to the first shield member and locating the first
projecting portion and the second projecting portion at a position to engage with each other in a noncontact state;

a second step of, after the first step, sputtering the target while maintaining the first projecting portion and the second
projecting portion at the position to engage with each other in the noncontact state; and

a third step of, after the second step, causing the first opening/closing driving means to set the first shield member in
the open state and sputtering the target to perform deposition on the substrate.

US Pat. No. 9,082,803

SUBSTRATE HOLDING APPARATUS, MASK ALIGNMENT METHOD, AND VACUUM PROCESSING APPARATUS USING LONG TAPER PINS AND SHORT TAPER PINS FOR ALIGNMENT

CANON ANELVA CORPORATION,...

2. A substrate holding apparatus comprising:
a substrate holder capable of holding a substrate;
a mask to be located on the substrate holder with the substrate interposed therebetween;
a first engaging portion which is formed on any one of the substrate holder and the mask and which has two protruding portions,
wherein the two protruding portions of the first engaging portion are arranged along a first direction;

a second engaging portion which is formed on the any one of the substrate holder and the mask and which has two discrete protruding
portions, wherein a length of a part that protrudes from the any one of the substrate holder and the mask, of the two discrete
protruding portions of the second engaging portion, is shorter than each of a length of a part that protrudes from the any
one of the substrate holder and the mask, of the two protruding portions of the first engaging portion, wherein the two discrete
protruding portions of the second engaging portion are arranged along a second direction that is perpendicular to the first
direction, the first and second directions being in a same plane;

first groove portions formed in the other one of the substrate holder and the mask to engage with the two protruding portions
of the first engaging portion; and

second groove portions formed in the other one of the substrate holder and the mask to engage with the two discrete protruding
portions of the second engaging portion.

US Pat. No. 9,627,187

SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A sputtering apparatus including a vacuum chamber, a substrate stage provided in the vacuum chamber and configured to hold
a substrate, a plurality of cathode electrodes provided to face the substrate stage and configured to hold targets, and a
deposition preventing plate arranged between the substrate stage and the cathode electrodes and having holes formed at positions
respectively facing the cathode electrodes that are configured to hold the targets, the sputtering apparatus comprising
a shutter plate arranged between the deposition preventing plate and the substrate stage, the shutter plate having at least
one hole formed to expose a target selected from the targets to the substrate, and setting the target and the substrate in
a shielded state or non-shielded state by rotating the shutter plate about a rotation axis,

wherein:
a concentric concavo-convex structure is formed on a surface of the shutter plate that faces the deposition preventing plate,
and is centered about the rotation axis;

a concentric concavo-convex structure is formed on a surface of the deposition preventing plate that faces the shutter plate
and is centered about the rotation axis, and

wherein the concavo-convex structure on each surface of the shutter plate and the deposition preventing plate is formed so
that concave portions of each of the shutter plate and the deposition preventing plate are in axial alignment with convex
portions of each of the shutter plate and the deposition preventing plate, and arranged such that at least two convex portions
of the shutter plate fit within respective concave portions of the deposition preventing plate, and at least two convex portions
of the deposition preventing plate fit within respective concave portions of the shutter plate, and

the concentric concavo-convex structure formed on the deposition preventing plate extends from an edge of one of the holes
of the deposition preventing plate to an edge of another of the holes of the deposition preventing plate.

US Pat. No. 9,583,304

PROCESSING APPARATUS AND SHIELD

CANON ANELVA CORPORATION,...

1. A processing apparatus for processing a substrate in a vacuum processing space in a chamber, the apparatus comprising:
a shield capable of being arranged in the chamber; and
a holding portion configured to hold the shield by a magnetic force,
wherein the holding portion has a holding surface and a first magnet,
the shield includes a second magnet configured to generate an attraction force with respect to the first magnet, and a receiving
portion configured to receive a tool configured to apply a force to move the shield with respect to the holding portion,

the shield is configured to be movable with respect to the holding portion against the magnetic force acting between the first
magnet and the second magnet, and

when the shield is moved with respect to the holding portion using the tool, the magnetic force acting between the first magnet
and the second magnet weakens, and the shield is detachable from the holding portion.

US Pat. No. 9,472,384

ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD

Canon Anelva Corporation,...

1. A shield member used in a vacuum container, which includes a target holder configured to hold a target and a substrate
holder configured to connect an up-and-down mechanism capable of moving the substrate holder in a vertical direction and configured
to have a substrate placement surface capable of having one substrate placed thereon, the shield member comprising:
a first member capable of being arranged between the substrate holder and the target holder and configured to set, by an operation
of a first rotation driving unit, a closed state in which the substrate holder is shielded from the target holder or an open
state in which the substrate holder is opened to the target holder, wherein when the first member is inserted between the
substrate holder and the target holder, the first member sets the closed state, and when the first member is retreated from
between the substrate holder and the target holder, the first member sets the open state; and

a second member which is arranged, in contact with the substrate placement surface, on a side of the substrate placement surface
of the substrate holder and at both outer peripheral edge portions of the one substrate and is configured to have a ring shape
capable of holding both outer peripheral edge portions,

wherein a first concentric projecting portion, extending in a direction of the second member and having at least one ring
shape, is formed in contact with a surface of the first member, and

wherein a second concentric projecting portion, engaging with the first concentric projecting portion in a noncontact state
at a position when the first member is inserted between the substrate holder and the target holder by the first rotation driving
unit and the substrate holder is moved up by the up-and-down mechanism and the substrate holder comes close to the first member,
and extending in a direction of the first member and having at least one ring shape, is formed on a surface of the second
member.

US Pat. No. 9,379,279

EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND ILLUMINATION DEVICE

CANON ANELVA CORPORATION,...

1. An epitaxial film forming method of forming an epitaxial film on a substrate by using a sputtering method comprising:
placing the substrate in a vessel in which at least one of a target with a wurtzite structure and a target for forming a film
with a wurtzite structure by deposition;

applying high-frequency power to a target electrode to which the target is attached, and applying high-frequency bias power
to a substrate holder supporting the substrate in such a manner as to suppress frequency interference between the applied
high-frequency power and the applied high-frequency bias power; and

forming the epitaxial film on the substrate by sputtering the target with plasma generated by the high-frequency power,
wherein the forming the epitaxial film includes causing the target to give off a molecule of the target by applying the high-frequency
power to the target electrode while generating an electric field that orients a polarization from a negative charge to a positive
charge of the molecule toward the substrate supported by the substrate holder by applying the high-frequency bias power to
the substrate holder.

US Pat. No. 9,316,555

COLD CATHODE IONIZATION VACUUM GAUGE AND INNER WALL PROTECTION MEMBER

Canon Anelva Corporation,...

1. A cold cathode ionization vacuum gauge, comprising:
two electrodes disposed such that one of the electrodes is surrounded by the other electrode having a cylindrical shape to
thereby form a discharge space therebetween; and

an electrode protection member disposed in the discharge space and configured to protect an inner wall surface of the other
electrode in a circumferential direction,

wherein the electrode protection member includes a protection portion formed of an elastic member having electric conductivity
and a plate-shape, the elastic member being capable of elastic deformation into a cylindrical shape and being capable of changing
the diameter of the cylindrical shape in accordance with the elastic deformation, and

wherein the protection portion is elastically deformed along a shape of the inner wall surface in the circumferential direction,
presses the inner wall surface of the other electrode, and is to be electrically connected to the other electrode.

US Pat. No. 9,299,544

SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A sputtering apparatus comprising:
a target electrode capable of mounting a target;
a first support which supports the target electrode;
a magnet unit which forms a magnetic field on a surface of the target;
a second support which supports the magnet unit, the second support including a motor configured to rotate a first shaft connected
to the magnet unit so as to rotate the magnet unit, and a driving base configured to support the motor, the magnet unit being
supported by the motor via the first shaft, wherein the magnetic field creates a first force urging the driving base of the
second support in a first direction;

a driving unit which includes a second shaft connected to the motor and moves the second shaft so as to move the motor vertically
such that the magnetic unit is moved vertically, the driving unit configured so as to increase a distance between the magnetic
unit and the target; and

a force generation portion which is provided between the first support and the driving base of the second support, and generates
a second force, the second force urges the driving base of the second support in a second direction that is opposite to the
first direction, the force generation portion being configured so as to assist the driving unit in increasing the distance
between the magnetic unit and the target;

wherein the second force has a magnitude which increases as the magnet unit comes closer to the target electrode;
wherein the force generation portion is one of a spring, a magnet, and an elastic member.

US Pat. No. 9,054,142

DATA COLLECTION SYSTEM FOR VACUUM PROCESSING APPARATUS

Canon Anelva Corporation,...

1. A vacuum processing apparatus comprising:
a transfer module that transfers an object to be processed;
a transfer module control device that repeatedly acquires state data of the transfer module at first intervals and stores
the acquired state data of the transfer module therein;

a process module that is connected to the transfer module and performs processing on the object to be processed which is transferred
from the transfer module;

a process module control device that repeatedly acquires state data of the process module at second intervals and stores the
acquired state data of the process module therein; and

a data collection device that collects the state data of the transfer module and the state data of the process module,
wherein the transfer module control device, the process module control device and the data collection device are connected
in a loop and are configured such that a state data set including the state data of the transfer module and the state data
of the process module can be transmitted and received between each other,

wherein the data collection device is configured to receive the state data set from one of the transfer module control device
and the process module control device and transmit the received state data set to the other one of the transfer module control
device and the process module control device, and

where the other one of the transfer module control device and the process module control device is configured to receive the
state data set from the data collection device to replace, in response to timing of reception of the state data set, only
its own state data portion in the received state data set with the latest state data stored therein to create an updated state
data set including the latest state data and the state data of the one of the transfer module control device and the process
module control device in the received state data set as it is, and to transmit the updated state data set to the one of the
transfer module control device and the process module control device.

US Pat. No. 9,437,702

ELECTRONIC COMPONENT MANUFACTURING METHOD AND ELECTRODE STRUCTURE

CANON ANELVA CORPORATION,...

1. An electronic component manufacturing method, comprising:
forming a first electrode constituting layer in a recess formed in a workpiece, the recess having an opening diameter of 15
nm or less;

performing plasma nitridation directly on a surface of the first electrode constituting layer; and
forming a second electrode constituting layer free of Ti directly contacting the first electrode constituting layer, which
has been subjected to the plasma nitridation,

wherein in the forming of the first electrode constituting layer, the first electrode constituting layer is formed by sputtering
while a magnetic field is formed on a target surface by a magnet unit having a plurality of magnets disposed at grid points
of a polygonal grid arranged in a grid, the magnets being disposed such that adjacent magnets have opposite poles,

wherein the plasma nitridation is performed while a magnetic field is formed on the target surface by the magnet unit, and
wherein in the forming of the second electrode constituting layer, the second electrode constituting layer having a flat surface
is formed by sputtering while a magnetic field is formed on the target surface by the magnet unit.

US Pat. No. 9,428,828

FILM FORMING METHOD, FILM FORMING APPARATUS AND CONTROL UNIT FOR THE FILM FORMING APPARATUS

CANON ANELVA CORPORATION,...

1. A film forming method for forming a film on a substrate by sputtering a target using a film forming apparatus comprising
a chamber shield that is grounded and disposed on an inner surface of a vacuum chamber: a target holder that is disposed in
the vacuum chamber holding the target; a substrate holder that is disposed in the vacuum chamber so as to face the target
holder and having a substrate holding surface for holding the substrate; a first shielding member that is disposed in an upper
part of the chamber shield and in a vicinity of the target holder, and having an opening; and a second shielding member that
is disposed in a lower part of the chamber shield and in a vicinity of the substrate holder, the method comprising:
a first step of applying a first power to the target holder to cause discharge in a first discharge space that is formed when
the first shielding member is located at a first position, at a same time with shielding the substrate by locating the second
shielding member at a third position such that the second shielding member covers the substrate holding surface on which the
substrate is held, the first power being lower than a film forming power applied upon film formation from a power source connected
to the target holder, the first shielding member being movable between the first position that shields between the target
holder and the substrate holder and a second position that does not shield between the target holder and the substrate holder,
the second shielding member being movable between the third position that shields between the target holder and the substrate
holder and a fourth position that does not shield between the target holder and the substrate holder;

a second step of changing a location of discharging from the first discharge space to a second discharge space larger than
the first discharge space by moving the first shielding member from the first position to the second position such that the
opening of the first shielding member makes the target and the second discharge space communicate with each other, while continuing
the discharge caused in the first step and locating the second shielding member at the third position such that the second
shielding member covers the substrate holding surface;

a third step of applying a second power higher than the first power to the target holder from the power source in the second
discharge space, while locating the first shielding member at the second position such that the first shielding member does
not shield between the target holder and the substrate holder, and locating the second shielding member at the third position
such that the second shielding member covers the substrate holding surface; and

a fourth step of exposing the substrate, which is shielded against the second discharge space by the second shielding member,
to the second discharge space by moving the second shielding member from the third position to the fourth position such that
the second shielding member does not cover the substrate holding surface, while locating the first shielding member at the
second position such that the first shielding member does not shield between the target holder and the substrate holder.

US Pat. No. 9,449,800

SPUTTERING APPARATUS AND SPUTTERING METHOD

CANON ANELVA CORPORATION,...

1. A sputtering apparatus comprising:
a process chamber where to process a substrate;
a substrate holder arranged inside the process chamber and being rotatable in an in-plane direction of the substrate while
holding the substrate; and

a target holder located obliquely to the substrate holder, and facing the substrate holder in an inclined manner,
wherein a projection plane of a target holding surface of the target holder projected in a direction along a center normal
line to the target holding surface onto a plane containing a substrate mounting surface of the substrate holder is formed
outside the substrate mounting surface of the substrate holder, and

wherein the substrate holder and the target holder are provided at positions where a center normal line to the substrate mounting
surface and the center normal line to the target holder are not coplanar when the substrate holder is rotated in the in-plane
direction.

US Pat. No. 9,431,281

TEMPERATURE CONTROL METHOD FOR SUBSTRATE HEAT TREATMENT APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, TEMPERATURE CONTROL PROGRAM FOR SUBSTRATE HEAT TREATMENT APPARATUS, AND RECORDING MEDIUM

CANON ANELVA CORPORATION,...

1. A computer-readable recording medium on which a temperature control program is recorded,
wherein the temperature control program is for a substrate heat treatment apparatus that includes a conductive heating container
in an evacuable treatment chamber, and subjects a substrate to a heat treatment with heat of the heating container, a filament
being incorporated into the heating container, thermal electrons generated from the filament being accelerated by an accelerating
voltage applied between the filament and the heating container from an accelerating power source, the heating container being
heated by causing the accelerated thermal electrons to collide with the heating container, the program causing a control apparatus
of the substrate heat treatment apparatus to:

increase a treatment temperature while controlling an emission current so as to be at a fixed value;
continue the treatment temperature increase while reducing the emission current in a stepwise manner, after the treatment
temperature reaches a preset temperature, before reaching an annealing temperature; and

maintain the treatment temperature at a fixed value while controlling the emission current until an annealing treatment is
completed, after the treatment temperature reaches the annealing temperature.

US Pat. No. 9,734,989

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE

CANON ANELVA CORPORATION,...

1. A method for manufacturing a semiconductor device, comprising:
performing a chemical mechanical planarization (CMP) step of polishing a substrate with chemical mechanical polishing, wherein
in the CMP step, an amount of polishing is higher at an outer peripheral portion in a plane of the substrate than at a central
portion thereof;

providing an ion beam etching device comprising:
a plasma generation chamber,
a treatment chamber configured to process a substrate,
a grid provided between the treatment chamber and the plasma generation chamber, the grid for forming an ion beam by drawing
ions from the plasma generation chamber, and

a substrate holder in which a substrate provided in the treatment chamber is placed is used; and
performing an ion beam etching (IBE) step of performing ion beam etching treatment to the polished substrate, wherein, in
the ion beam etching treatment in the IBE step, an etching amount is lower at the outer peripheral portion in the substrate
plane than at the central portion thereof so that a film thickness distribution in the substrate plane generated by the CMP
step is corrected.

US Pat. No. 9,640,754

PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT

CANON ANELVA CORPORATION,...

1. A process for producing a magnetoresistive effect element having two ferromagnetic layers and a tunnel barrier layer located
between the two ferromagnetic layers, the process comprising a step of applying an ion beam to a metal material adhered to
the side wall of the tunnel barrier layer,
wherein the ion beam is formed using a plasma of a Kr gas or a Xe gas,
an energy of the ion beam is not less than 10 eV and not more than 100 eV, and
the metal material contains noble metal atoms and other metal atoms, and the noble metal atoms are selectively etched away
from the other metal atoms in the metal material by using the ion beam.

US Pat. No. 9,391,274

NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME

CANON ANELVA CORPORATION,...

1. A method of manufacturing a nonvolatile memory element including:
a first electrode;
a second electrode; and
a variable resistance layer that is interposed between the first electrode and the second electrode and in which a resistance
value thereof changes into at least two different resistance states,

wherein the variable resistance layer possesses a stacked structure having a first metal oxide layer containing Hf and O,
and a second metal oxide layer that is provided between the first metal oxide layer and at least one of the first electrode
and the second electrode and contains Al and O,

wherein a step of forming the variable resistance layer includes:
forming the first metal oxide layer; and
forming the second metal oxide layer,
wherein the forming of the first metal oxide layer has a first magnetron sputtering step, under a mixed atmosphere of a reactive
gas containing oxygen and an inert gas, of using hafnium as a metal target and setting a mixing ratio of the reactive gas
and the inert gas so that a molar ratio of O to Hf satisfies a range of 0.30 to 1.90,

wherein the forming of the second metal oxide layer has a second magnetron sputtering step, under a mixed atmosphere of a
reactive gas containing oxygen and an inert gas, of using aluminum as a metal target and setting a mixing ratio of the reactive
gas and the inert gas so that a molar ratio of O to Al satisfies a range of 1.0 to 2.2,

wherein the first electrode and the second electrode are made of a titanium nitride film,
wherein each of a step of forming the first electrode and a step of forming the second electrode is a step of subjecting a
Ti target to magnetron sputtering under a mixed atmosphere of a reactive gas containing nitrogen and an inert gas, and

wherein in each of the step of forming the first electrode and the step of forming the second electrode, a mixing ratio of
the nitrogen gas and the inert gas is set so that a molar ratio of Ti and N in the titanium nitride film is 1.15 or more,
and that crystal orientation X being a ratio of (200) peak intensity to (111) peak intensity in an X-ray diffraction spectrum
of the titanium nitride film satisfies the range of 1.2

US Pat. No. 9,502,644

METHOD FOR MANUFACTURING MAGNETORESISTIVE DEVICE

CANON ANELVA CORPORATION,...

1. A method for manufacturing a magnetoresistive device, comprising steps of:
preparing a substrate on which a first ferromagnetic layer is formed;
forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and
forming a second ferromagnetic layer on the tunnel barrier layer, wherein
the step of forming the tunnel barrier layer includes steps of:
forming a metal layer on the first ferromagnetic layer;
oxidizing the metal layer; and
before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined
pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature.

US Pat. No. 9,502,223

SPUTTERING APPARATUS, TARGET AND SHIELD

CANON ANELVA CORPORATION,...

1. A sputtering apparatus comprising a backing plate, a fixing portion configured to fix a target to the backing plate, and
a shield surrounding a periphery of the target, and forms a film on a substrate in a processing space by sputtering, wherein
the shield has an opening,
the target includes a main body arranged inside the opening, and a flange surrounding the main body,
the fixing portion is configured to fix the target to the backing plate by pressing the flange of the target against the backing
plate,

the shield includes a facing portion which faces the flange of the target fixed to the backing plate by the fixing portion
such that the fixing portion is not arranged between the facing portion and the flange, and an outer portion formed outside
the facing portion, and a gap between the facing portion and the backing plate is smaller than a gap between the outer portion
and the backing plate, and

an inner surface of the shield, which faces the processing space, includes a portion which inclines such that a distance between
the inner surface and the backing plate decreases from the outer portion to the facing portion,

a surface of the fixing portion, which is arranged at a side of the processing space, includes a portion which inclines such
that a distance between the surface of the fixing portion and the backing plate decreases toward an inside of the opening,
and

a surface of the shield, which is opposite to the inner surface, includes a portion which inclines such that a distance between
the surface of the shield and the backing plate decreases from the outer portion to the facing portion.

US Pat. No. 9,109,285

FILM-FORMING APPARATUS

Canon Anelva Corporation,...

1. A film-forming apparatus comprising:
a plurality of target electrodes respectively having attachment surfaces to which targets can be attached;
a substrate holder configured to hold a substrate at a position opposing the plurality of target electrodes;
a first shutter member rotatably provided between the plurality of target electrodes and the substrate holder and having a
plurality of openings that oppose the attachment surfaces when the first shutter member is rotated;

a first separating portion disposed between the openings of the first shutter member on one of two surfaces of the first shutter
member that is on the target electrode side; and

a second separating portion disposed between the first shutter member and the target electrodes,
wherein the first shutter member is driven so as to bring the first separating portion and the second separating portion toward
each other so that an indirect path can be formed between the first separating portion and the second separating portion,
and driven so as to bring the first separating portion and the second separating portion away from each other so that the
first shutter plate can be rotated.

US Pat. No. 9,425,029

PROCESSING APPARATUS HAVING A FIRST SHIELD AND A SECOND SHIELD ARRANGED TO SANDWICH A SUBSTRATE

CANON ANELVA CORPORATION,...

1. A processing apparatus comprising:
a vacuum vessel;
a supply source including a first supply source and a second supply source arranged to respectively face a first surface of
a substrate conveyed into the vacuum vessel and a second surface on an opposite side to the first surface and configured to
supply a material to apply a process to the substrate;

a shield member including a first shield provided around the first supply source and a second shield provided around the second
supply source, the first shield and the second shield being arranged to sandwich the substrate; and

a moving device configured to move the first shield and the second shield to set one of a first state in which the first shield
and the second shield are arranged with respect to each other so as to form process spaces between the first shield and the
second shield, and a second state in which the first shield and the second shield are further apart from each other than when
in the first state,

wherein the shield member forms the process spaces between the first supply source and the substrate and between the second
supply source and the substrate when the moving device moves the first shield and second shield to set the first state, and

the process is applied to the first surface and the second surface in the process spaces,
the processing apparatus further comprising a gas supply unit configured to supply a process gas into the vacuum vessel,
wherein the shield member includes gas inlets which are connected to the gas supply unit in the first state, and
when the moving device moves the first shield and the second shield to set the first state, the process gas is supplied from
the gas supply unit into the process spaces via the gas inlets.

US Pat. No. 9,190,287

METHOD OF FABRICATING FIN FET AND METHOD OF FABRICATING DEVICE

Canon Anelva Corporation,...

1. A method of fabricating a fin FET, the method comprising the steps of:
preparing a substrate which comprises a semiconductor fin thereon; and
ion beam etching a side wall of the semiconductor fin using an ion beam extracted from a grid,
wherein, in the ion etching step:
the substrate is positioned with a tilt with respect to the grid;
the ion beam etching is performed with an amount of energy of the ion beam set such that an amount of energy of the ion beam
incident in an extending direction of the fin is larger than an amount of energy of the ion beam incident in any other direction;

the substrate is rotated about an axis perpendicular to a plane of the substrate;
the substrate rotation involves repeating rotation and rotation stop; and
rotation stop time of the substrate is longer when the grid is positioned in the extending direction of the fin, than when
the grid is positioned in any other direction.

US Pat. No. 9,322,092

SPUTTERING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE

CANON ANELVA CORPORATION,...

1. A sputtering apparatus comprising:
a processing chamber configured to perform deposition processing;
an exhaust chamber directly connected to the processing chamber;
an exhaust device which evacuates the processing chamber through the exhaust chamber;
a substrate holder which is placed in the processing chamber, and configured to place a substrate thereon;
a target holder placed in the processing chamber;
a shutter capable of moving to assume one of a shielding state in which the shutter shields a gap between the substrate holder
and the target holder, and a retracted state in which the shutter is retracted from the gap between the substrate holder and
the target holder;

a driving unit configured to drive the shutter;
a shutter accommodation unit having an opening portion through which the shutter is to be extended to the processing chamber
and retracted from the processing chamber; and

a gas introduction pipe configured to introduce a gas in the processing chamber through the opening portion of the shutter
accommodation unit,

wherein an exhaust port is formed between a periphery of the opening portion of the shutter accommodation unit and an inner
wall of the exhaust chamber,

wherein the shutter accommodation unit is placed in the exhaust chamber such that an exhaust region is formed outside the
shutter accommodation unit and inside the exhaust chamber and the exhaust region is in communication with the exhaust device,
and the shutter accommodation unit is sealed with respect to the exhaust chamber so that the gas introduced in the shutter
accommodation unit does not pass from the shutter accommodation unit to the exhaust chamber and the gas flows into the processing
chamber only through the opening portion,

wherein the gas introduction pipe is arranged from an outside of the exhaust chamber to an inside of the shutter accommodation
unit, and

wherein a gas introduced from the gas introduction pipe in the shutter accommodation unit is introduced in the processing
chamber through the opening portion of the shutter accommodation unit, the gas introduced in the processing chamber is exhausted
by the exhaust device through the exhaust port and the exhaust region.

US Pat. No. 9,779,921

SUBSTRATE PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. A substrate processing apparatus comprising:
a process chamber;
an exhaust unit configured to exhaust gas from the process chamber;
a gas introduction unit configured to introduce a gas into the process chamber;
a substrate holder having a substrate holding surface configured to hold a substrate in the process chamber, the substrate
holder being capable of being driven along a driving direction perpendicular to the substrate holding surface;

a first shield provided on a peripheral portion of the substrate holder; and
a second shield provided inside the process chamber,
wherein the first shield includes, at a peripheral portion thereof, a cylindrical portion extending in a direction parallel
to the driving direction, and the second shield includes a concave portion,

an internal space of the process chamber is partitioned into an outer space and a process space to process the substrate by
at least the first shield, the second shield, and the substrate holder,

a relative position of the first shield and the second shield changes when the substrate holder is driven in the driving direction,
the first shield and the second shield are provided so as not to make a linear path from a center of the process space to
the outer space exist,

the first shield and the second shield form a gap therebetween, the gap including a minimum gap portion having a minimum size
in a direction perpendicular to the driving direction, the minimum gap portion being formed by an outer side surface of the
cylindrical portion of the first shield and an inner side surface of the second shield,

a length of the minimum gap portion in the direction parallel to the driving direction does not change when the substrate
holder is driven in the driving direction and the relative position of the first shield and the second shield changes, and

the substrate holder is driven in the driving direction within a range in which an inner side surface of the cylindrical portion
of the first shield does not face an inner side surface of the concave portion of the second shield.

US Pat. No. 9,245,785

SUBSTRATE PROCESSING APPARATUS

Canon Anelva Corporation,...

1. A substrate processing apparatus comprising:
a first chamber in which a substrate is processed;
a second chamber, in which the substrate is processed, that is connected to the first chamber by a gate valve and has an opening
through which the substrate is transferred between the first chamber and the second chamber;

a third chamber that is connected to the second chamber by a second gate valve and has a second opening through which the
substrate is transferred between the second chamber and the third chamber;

a first holder that is provided in the first chamber, and on which the substrate is mounted when thin film deposition is performed
on the substrate;

a second holder that is provided in the second chamber, and on which the substrate is mounted when thin film deposition is
performed on the substrate;

a third holder which is provided in the third chamber, and on which the substrate is mounted;
an arm that is jointless, is provided in the first chamber, and has a substrate holding part capable of holding the substrate,
the arm being configured to rotate on a single rotation axis fixed in the first chamber and being configured to move, by rotating
on the single rotation axis, the substrate holding part through the gate valve on any of the first holder, the second holder,
and an arm retreat position for retreating the substrate holding part when thin film deposition is performed on the substrate
mounted on the first holder; and

a second arm that is jointless, is provided in the second chamber, and has a second substrate holding part capable of holding
the substrate, the arm being configured to rotate on a second single rotation axis fixed in the second chamber and being configured
to move, by rotating on the second single rotation axis, the second substrate holding part through the second gate valve on
any of the second holder and the third holder,

wherein the arm retreat position, the first holder and the second holder are sequentially located on a concentric circle having
a center at the single rotation axis,

wherein the second arm is configured to transfer the substrate mounted on the third holder to the second holder through the
second gate valve, and the arm is configured to transfer the substrate mounted on the second holder to the first holder through
the gate valve, and

wherein the second arm is further configured to move the second substrate holding part on a second arm retreat position for
retreating the second substrate holding part when thin film deposition is performed on the substrate mounted on the second
holder.

US Pat. No. 9,685,299

SUBSTRATE PROCESSING APPARATUS, ETCHING METHOD OF METAL FILM, AND MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT

Canon Anelva Corporation,...

1. A substrate processing apparatus comprising:
a vacuum container having a processing space in which a substrate is processed and a plasma forming space in which plasma
is formed;

a component member made of a dielectric which is part of the vacuum container and configures at least part of the plasma forming
space;

a conductive member fixed on the component member;
a faraday shield fixed on the plasma forming space side of the component member;
a first dielectric member coating the plasma forming space side of the faraday shield; and
a second dielectric member provided on the plasma forming space side of the first dielectric member,
wherein the conductive member is provided on the component member on a side opposite to the plasma forming space side,
wherein the faraday shield is fixed to a position opposite to the conductive member with the component member therebetween,
wherein the first dielectric member is formed to coat the faraday shield so that the faraday shield has a floating potential,
wherein the second dielectric member is provided at a position opposite to the faraday shield with the first dielectric member
therebetween, and

wherein the vacuum container has a protrusion part, and the second dielectric member is exchangeably provided on the protrusion
part.

US Pat. No. 9,773,973

PROCESS FOR PRODUCING MAGNETORESISTIVE EFFECT ELEMENT AND DEVICE PRODUCING METHOD

CANON ANELVA CORPORATION,...

1. A process for producing a magnetoresistive effect element having two ferromagnetic layers and a tunnel barrier layer located
between the two ferromagnetic layers comprising:
a step of providing a substrate in which the tunnel barrier layer is element-isolated; and
an ion-beam etching step of ion-beam etching the substrate with an ion beam extracted from a grid,
wherein in the ion beam etching step, the substrate is located being inclined relative to the grid, and an energy amount of
an ion beam entering from a direction in which a pattern groove formed on the substrate extends is larger than the energy
amount of the ion beam entering from another direction, and

wherein
in the ion beam etching step, the substrate is rotated in an in-plane direction of the substrate, and
when the ion beam enters from the direction the pattern groove extends, the rotation speed of the substrate is reduced lower
than the rotation speed determined when the ion beam enters from another direction.

US Pat. No. 9,761,423

SPUTTERING APPARATUS AND MAGNET UNIT

Canon Anelva Corporation,...

1. A sputtering apparatus comprising:
a target holder including a target mounting surface; and
a magnet unit of a rectangular shape disposed near an opposite surface of the target holder from the target mounting surface,
and having a long side and a short side,

wherein the magnet unit includes:
a first magnet magnetized in a direction perpendicular to the target mounting surface,
a second magnet disposed surrounding the first magnet and magnetized in the direction perpendicular to the target mounting
surface and in a different and opposite direction from the direction of magnetization of the first magnet, and

a third magnet located at part between the first magnet and the second magnet in the short-side direction and at least at
a center position between the first magnet and the second magnet, the third magnet being magnetized in the short-side direction
and in a direction horizontal to the target mounting surface,

wherein the third magnet includes:
a surface facing the second magnet and having the same polarity as a polarity of a surface of the second magnet on the target
holder side, and

a surface facing the first magnet and having the same polarity as a polarity of a surface of the first magnet on the target
holder side, and

wherein a length in the long-side direction of the third magnet is shorter than a length in the long-side direction of the
first magnet such that the third magnet is not disposed at an end portion in the long-side direction between the first magnet
and the second magnet.

US Pat. No. 9,752,226

MANUFACTURING APPARATUS

CANON ANELVA CORPORATION,...

1. A manufacturing method of growing a multi-layered film as a magneto-resistance element including:
a first film that includes a metal film having a thickness not smaller than 10 nm;
a second film that includes a metal film having a thickness not smaller than 10 nm;
a third film that includes at least one layer of an oxide film, a nitride film, and a semiconductor film deposited between
the first film and the second film;

a magnetization fixing layer including a plurality of films; and
a magnetization free layer,
the method comprising:
forming the first film in a first sputtering deposition chamber including one sputtering cathode;
forming the second film in a second sputtering deposition chamber including one sputtering cathode;
forming the third film in a third sputtering deposition chamber including one sputtering cathode;
depositing at least the magnetization fixing layer in a fourth sputtering deposition chamber including two or more sputtering
cathodes; and

forming a plurality of films including the magnetization free layer in a fifth sputtering deposition chamber including two
or more sputtering cathodes,

wherein each of the sputtering cathodes in the first sputtering deposition chamber, the second sputtering deposition chamber,
and the third sputtering deposition chamber is larger than each of the sputtering cathodes in the fourth sputtering deposition
chamber and the fifth sputtering deposition chamber.

US Pat. No. 9,865,805

METHOD FOR MANUFACTURING MAGNETORESISTIVE ELEMENT

CANON ANELVA CORPORATION,...

1. A method for manufacturing a magnetoresistive element comprising the steps of:
forming one of a magnetization free layer and a magnetization pinned layer;
forming a tunnel barrier layer on top of the formed one of the magnetization free layer and the magnetization pinned layer;
and

forming the other of the magnetization free layer and the magnetization pinned layer on top of the tunnel barrier layer,
wherein forming the tunnel barrier layer comprises the sub-steps of:
depositing a metal film on top of a substrate, and
subjecting the metal film to an oxidation process,
wherein the oxidation step comprises the sub-steps of, in this order:
holding the substrate having the metal film formed thereon, on a supporting portion protruding from a substrate holding surface
of a substrate holder in a processing container in which the oxidation process is performed,

supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, in a state where the
substrate is mounted on the supporting portion,

stopping the introduction of the oxygen gas,
mounting the substrate on the substrate holding surface,
reintroducing the oxygen gas into the processing container by supplying the oxygen gas while moving the substrate closer to
an oxygen gas introduction unit provided in the processing container and configured to introduce the oxygen gas thereinto,

stopping the introduction of the oxygen gas, and
heating the substrate mounted on the substrate holding surface.

US Pat. No. 9,984,854

ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. An ion beam processing method of processing a substrate mounted on a substrate holder by using an ion beam extracted from a plasma source by a grid, the method comprising:in performing ion beam etching on the substrate located with a tilt to the grid while rotating the substrate in an in-plane direction thereof, performing ion beam processing such that an etching amount of an ion beam incident from an extending direction of a pattern trench formed on the substrate is made larger than an etching amount of an ion beam incident from another direction,
wherein a rotational speed of the substrate when the grid is located on a side in the extending direction of the pattern trench formed on the substrate is made lower than the rotational speed of the substrate when the grid is located on a side in a direction different from the extending direction.

US Pat. No. 10,062,553

SPUTTERING APPARATUS AND PROCESSING APPARATUS

Canon Anelva Corporation,...

1. A sputtering apparatus comprising:a space defining member defining a sputtering space for forming a film on a substrate, wherein
the space defining member has an inner surface facing the sputtering space, the space defining member including a concave portion having a bottom surface which is recessed from the inner surface,
an opening portion is provided in the bottom surface of the concave portion,
the sputtering apparatus further comprises a shield member configured to shield the opening portion from the sputtering space, the shield member including a cover and a support member supporting the cover at a first end of the support member,
the opening portion is formed so that a pressure gauge which can measure a pressure in the sputtering space is attachable,
the shield member is fixed at a state that at least a part of the cover is arranged in the concave portion and a second end of the support member is arranged in the opening, and
the shield member is configured to be removed from the concave portion by moving the shield into the sputtering space.

US Pat. No. 9,928,998

SPUTTERING APPARATUS

Canon Anelva Corporation,...

1. A method of cleaning using a sputtering apparatus, the sputtering apparatus comprising a magnet unit capable of forming a magnetic field on a surface of a target, a changing unit capable of driving the magnet unit to change a magnetic field pattern including a position and intensity of the magnetic field formed on the surface of the target, a discharge state measuring unit configured to measure a discharge state value when discharge voltage is applied to a target electrode to which the target is attached, and a memory unit configured to store a reference discharge state value acquired corresponding to each magnetic field pattern producible by the changing unit, the method comprising:a first step of determining, after forming a film on a substrate with a first magnetic field pattern, a state of the surface of the target based on a comparison between the discharge state value measured by the discharge state measuring unit after the forming of the film with the first magnetic field pattern and a discharge state reference value before the forming of the film corresponding to the first magnetic field pattern stored in the memory unit; and
a second step of cleaning comprising selecting a second magnetic field pattern, which is different from the first magnetic field pattern, based on a determination result at the first step, controlling the changing unit to produce the second magnetic field pattern, and executing sputter cleaning re-deposited substances or oxides on the surface of the target,
wherein, the first step further comprises measuring current flowing through the target as the discharge state value by the discharge state measuring unit and determining whether the current measured by the discharge state measuring unit is out of a range of 98 to 102% of a target current value when the target is unused, and
the sputter cleaning is executed in the second step if the current measured by the discharge state measuring unit is out of the range of 98 to 102% of the target current value when the target is unused.

US Pat. No. 9,852,879

ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. An ion beam processing method for processing a substrate placed in a processing chamber linked to a plasma generation chamber
by irradiating the substrate with an ion beam extracted and formed from plasma generated in the plasma generation chamber
having an internal space, comprising:
applying a positive voltage for extracting ions into the processing chamber to a first electrode disposed facing the internal
space, in a portion of linkage between the plasma generation chamber and the processing chamber, under a first condition where
irradiation of the substrate with the ion beam is blocked off by a shutter;

forming a magnetic field in the plasma generation chamber by an electromagnet under the first condition;
generating the plasma in the internal space under the first condition;
forming the ion beam by forming, under the first condition, a second condition where a positive voltage is applied to the
first electrode and a negative voltage is applied to a second electrode disposed closer to the processing chamber than the
first electrode, in the portion of linkage; and

moving the shutter and processing the substrate by irradiating the substrate with the ion beam,
wherein during formation of the plasma, the magnetic field is formed in the plasma generation chamber by the electromagnet,
and

wherein a current supplied to the electromagnet in forming the magnetic field is set higher than a current supplied to the
electromagnet during the formation of the plasma.

US Pat. No. 10,011,899

DEPOSITION APPARATUS

CANON ANELVA CORPORATION,...

1. A deposition apparatus comprising:a target unit;
an anode unit into which electrons emitted from the target unit flow;
a striker configured to come into contact with the target unit to render the target unit and the anode unit conductive, so as to cause arc discharge between the target unit and the anode unit;
a striker driving unit configured to drive the striker in one of a direction toward the target unit and a direction to retract from the target unit;
a power supply unit configured to supply power to the target unit and the anode unit;
a detector configured to detect that the striker is in contact with the target unit; and
a controller configured to control the striker driving unit to bring the striker into contact with the target unit, and to control the power supply unit to start supplying the power to the target unit and the anode unit after the detector detects that the striker contacts the target unit.

US Pat. No. 9,885,107

METHOD FOR CONTINUOUSLY FORMING NOBLE METAL FILM AND METHOD FOR CONTINUOUSLY MANUFACTURING ELECTRONIC COMPONENT

CANON ANELVA CORPORATION,...

1. A method for continuously forming a film made of a noble metal comprising the steps of:
carrying a substrate into a chamber;
forming only the film made of the noble metal on the substrate by plasma sputtering in the chamber; and then
during a period from when the substrate is carried out from the chamber after film formation to when another substrate upon
which the film made of the noble metal is to be formed subsequently is carried into the chamber, forming on an inner wall
surface of the chamber a secondary electron emission covering film made of a material having a secondary electron emission
coefficient higher than that of the noble metal.

US Pat. No. 10,062,545

APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM

CANON ANELVA CORPORATION,...

1. A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate, arranged on a substrate holder, using an ion beam etching apparatus including an ion source which emits an ion beam toward the substrate holder, a neutralizer which emits electrons toward the ion beam, and a shutter capable of moving between a closed position at which the ion beam emitted by the ion source toward the substrate holder is shielded, and an open position at which the ion beam emitted by the ion source toward the substrate holder is not shielded, the ion etching method comprising:when the shutter moves from the closed position to the open position,
a first step of gradually decreasing an amount of the electrons emitted by the neutralizer while keeping an amount of the ion beam emitted by the ion source constant; and then
a second step of gradually increasing the amount of the electrons emitted by the neutralizer while keeping the amount of the ion beam emitted by the ion source to be equal to the amount of the ion beam emitted by the ion source in the first step;
wherein the ion source, the neutralizer and the shutter are arranged such that the electrons emitted by the neutralizer can partially reach the substrate
when the shutter is arranged at the closed position; the computer program comprising:
a decremental control program having a command according to which the first step is executed; and
an incremental control program having a command according to which the second step is executed.

US Pat. No. 10,026,591

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, ION BEAM ETCHING DEVICE, AND CONTROL DEVICE

Canon Anelva Corporation,...

1. An ion beam etching device comprising:a plasma generation chamber;
a treatment chamber configured to process a substrate;
a grid provided between the treatment chamber and the plasma generation chamber, and for forming an ion beam by drawing ions from the plasma generation chamber;
a gas introduction unit for introducing discharge gas into the plasma generation chamber;
an exhaust for exhausting the treatment chamber;
a substrate holder in which a substrate provided is placed in the treatment chamber;
a control unit configured to receive a measurement result of an in-plane film thickness distribution before the substrate is processed; and
an electromagnetic coil provided outside of the plasma generation chamber and provided in a ceiling portion opposite to the grid of the plasma generation chamber, wherein
the electromagnetic coil includes an outer coil provided on an outer circumference of the ceiling portion and an inner coil provided on an inner circumference of the ceiling portion, current values applied to the outer coil and the inner coil can be independently controlled, and
the control unit controls the currents applied to the outer coil and the inner coil in accordance with the measurement result received by the control unit.

US Pat. No. 9,991,119

HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR SEMICONDUCTOR SUBSTRATE

CANON ANELVA CORPORATION,...

1. A heat treatment method for a semiconductor substrate, comprising performing a heat treatment at a temperature from 1500° C. to 2000° C. on a semiconductor substrate in a treatment chamber where an inert gas is sealed on a surface of a recess formed in the semiconductor substrate at a pressure from 1 kPa to 100 kPa for suppressing sublimation of a material of the semiconductor substrate, while exhaust from the treatment chamber is stopped.

US Pat. No. 9,980,357

X-RAY GENERATING DEVICE AND X-RAY PHOTOGRAPHY SYSTEM

CANON ANELVA CORPORATION,...

1. An X-ray generating device comprising:an X-ray tube;
a drive circuit that drives the X-ray tube;
a voltage generation circuit that generates an electron acceleration voltage applied to the X-ray tube; and
a control unit that communicates with the drive circuit and the voltage generation circuit,
wherein at least the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil,
wherein at least a part of a path connecting the drive circuit and the control unit is formed of an optical fiber cable arranged inside the storage container,
wherein the optical fiber cable has a coating that suppresses fluctuation of the optical fiber cable due to a convective flow of the insulating oil generated at driving of the voltage generation circuit,
wherein the coating is cured by, from a resin material containing a plasticizer, at least a part of the plasticizer being leaching out, and
wherein the control unit is configured to facilitate leaching of the plasticizer by driving the voltage generation circuit to apply a voltage for a predetermined time to the optical fiber cable in a state of no X-ray being generated.

US Pat. No. 9,911,526

MAGNET UNIT AND MAGNETRON SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A magnet unit which is arranged on a rear surface of a cathode electrode supporting a target and which includes a yoke
plate which is made of an antiferromagnetic plate material and is arranged on the rear surface of the cathode electrode, the
magnet unit comprising:
a first magnet element consisting of:
(a) a first magnet which is provided to stand upright on a plate surface of the yoke plate along a vertical direction and
is configured to consist of a first magnetic pole on a surface facing the plate surface of the yoke plate and a second magnetic
pole having a polarity opposite to a polarity of the first magnetic pole on a surface facing away from the plate surface of
the yoke plate,

(b) a second magnet which is provided to stand upright on the plate surface of the yoke plate along the vertical direction
and is configured to consist of a third magnetic pole having a polarity opposite to the polarity of the first magnetic pole
on a surface facing the plate surface of the yoke plate and a fourth magnetic pole having a polarity opposite to a polarity
of the second magnetic pole on a surface facing away from the plate surface of the yoke plate, and

(c) a third magnet, which is arranged to stand upright between the first magnet and the second magnet and is configured to
consist of a fifth magnetic pole in a portion facing the second magnetic pole of the first magnet and a sixth magnetic pole
having a polarity opposite to a polarity of the fifth magnetic pole on a portion facing the third magnetic pole of the second
magnet, and is magnetized so that a line which connects the fifth magnetic pole and the sixth magnetic pole is diagonally
oriented with respect to a surface parallel to the plate surface of the yoke plate; and
a second magnet element consisting of:
(d) a fourth magnet which is provided to stand upright on a plate surface of the yoke plate along a vertical direction and
is configured to consist of a seventh magnetic pole on a surface facing the plate surface of the yoke plate and an eighth
magnetic pole having a polarity opposite to a polarity of the seventh magnetic pole on a surface facing away from the plate
surface of the yoke plate,

(e) a fifth magnet, which is provided to stand upright on the plate surface of the yoke plate along the vertical direction
and is configured to consist of a ninth magnetic pole having a polarity opposite to a polarity of the seventh magnetic pole
on a surface facing the plate surface of the yoke plate and a tenth magnetic pole having a polarity opposite to a polarity
of the eighth magnetic pole on a surface facing away from the plate surface of the yoke plate, and

(f) a sixth magnet, which is arranged to stand upright between the fourth magnet and the fifth magnet and is configured to
consist of an eleventh magnetic pole in a portion facing the seventh magnetic pole of the fourth magnet and a twelfth magnetic
pole having a polarity opposite to a polarity of the eleventh magnetic pole in a portion facing the tenth magnetic pole of
the fifth magnet, and is magnetized so that a line which connects the eleventh magnetic pole and the twelfth magnetic pole
is tilted with respect to a surface parallel to the plate surface of the yoke plate,

wherein in an arrangement of the first magnet element and the second magnet element, the first magnet is arranged to be adjacent
to the fourth magnet, the second magnet is arranged to be adjacent to the fifth magnet, and the third magnet is arranged to
be adjacent to the sixth magnet, and

wherein the first magnet element and the second magnet element, which are alternately arranged, are arranged radially so that
one end of the first magnet element and one end of the second magnet element are directed toward an end portion of the target,
and the other end of the first magnet element and the other end of the second magnet element are directed toward a center
portion of the target.

US Pat. No. 9,905,441

OXIDATION PROCESS APPARATUS, OXIDATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

CANON ANELVA CORPORATION,...

1. An oxidation process apparatus for performing an oxidation process on a substrate comprising:
a processing chamber;
a substrate holder provided in the processing chamber and having a substrate holding surface for holding the substrate;
an oxygen gas introduction means for introducing an oxygen gas into the processing chamber;
a surrounding portion provided in the processing chamber, having a cylindrical portion with a circular cross-section perpendicular
to an extending direction from a side of the oxygen gas introduction means to a side opposite to the oxygen gas introduction
means; and

a position changing means for changing relative positions of the substrate holder and the surrounding portion to allow the
substrate holding surface and the surrounding portion to form a space,

wherein the surrounding portion is provided so as to, during formation of the space, surround a side surface of the substrate
holder and form a gap between the surrounding portion and the substrate holder,

wherein the oxygen gas introduction means is provided so as to, during the oxidation process, introduce the oxygen gas restrictively
into the space formed in the processing chamber,

wherein the substrate holder comprises a dielectric portion having the substrate holding surface, a groove portion formed
in the substrate holding surface, and a means for introducing at least one of a heating gas and a cooling gas into a second
space formed in the groove portion between the substrate and the dielectric portion, when the substrate is held on the substrate
holding surface,

wherein the substrate holder is configured to move along a direction opposite to the extending direction in a hollow portion
of the cylindrical portion of the surrounding portion and thus move in the space with a circular cross-section perpendicular
to the extending direction, to form the gap between a side of the substrate holding surface and the cylindrical portion, and

wherein the oxygen gas introduced into the space and the at least one of the heating gas and the cooling gas introduced into
the second space are evacuated from the space and the second space through the gap.

US Pat. No. 9,853,207

MAGNETORESISTANCE EFFECT ELEMENT

CANON ANELVA CORPORATION,...

1. A magnetoresistance effect element comprising:
a barrier layer;
a reference layer formed on one surface of the barrier layer;
a free layer formed on another surface of the barrier layer; and
a pin layer placed on an opposite side of the reference layer from the barrier layer, wherein
the pin layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

US Pat. No. 9,822,450

SUBSTRATE PROCESSING APPARATUS

Canon Anelva Corporation,...

10. A substrate processing apparatus comprising:
a container in which a substrate is processed;
a first exhaust portion configured to exhaust a gas in the container;
a substrate holder provided inside the container and configured to retain the substrate;
a shield provided to surround the substrate holder and dividing an inside of the container into a processing space where the
substrate is processed and an outside space which is other than the processing space;

a gas introducing portion configured to introduce a gas into the processing space;
a plasma generating portion configured to generate plasma inside the processing space; and
a second exhaust portion provided to the shield, configured to allow the gas to be exhausted therethrough from the processing
space to the outside space, the second exhaust portion including:

an opening portion formed in the shield;
a first protruding portion provided around the opening portion so as to surround the opening portion, and including a notched
portion at a part of an end portion thereof at a side opposite from the opening portion; and

a screen portion covering the opening portion,
wherein the screen portion is connected to the end portion.

US Pat. No. 10,056,273

HEATING APPARATUS, SUBSTRATE HEATING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Canon Anelva Corporation,...

1. A heating apparatus comprising:a heater;
an electron reflection plate;
a filament arranged between the heater and the electron reflection plate;
a heating power supply configured to supply an AC voltage between a first terminal and a second terminal of the filament to emit thermoelectrons from the filament;
an acceleration power supply configured to supply an acceleration voltage between the filament and the heater;
a resistor arranged so as to form a path which connects the electron reflection plate and the heating power supply; and
wherein the heating power supply supplies the AC voltage to the filament, forming a closed circuit passing through the filament, the electron reflection plate, and the path.

US Pat. No. 9,997,339

SPUTTERING APPARATUS AND SUBSTRATE PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. A sputtering apparatus which includes a chamber, a substrate holder configured to hold a substrate in the chamber and rotate about an axis perpendicular to a surface on which the substrate is held, and a plurality of target holders configured to respectively hold targets, the apparatus comprising:a shutter unit configured to select one or more targets to be used for sputtering from a plurality of targets respectively held by the plurality of target holders,
wherein the shutter unit includes a first shutter and a second shutter configured to rotate about the axis and spaced apart from each other in a direction along the axis, and the first shutter is arranged between the plurality of target holders and the second shutter,
the plurality of target holders comprising at least three target holders which are arranged on a first virtual circle centered on the axis, with arrangement intervals measured along the first virtual circle between respective pairs of the target holders, each of the respective pairs formed by two directly adjacent target holders of the plurality of target holders on the first virtual circle, at least one of the arrangement intervals being a different length than another of the arrangement intervals,
the first shutter has a first aperture and a second aperture, with centers of the first aperture and the second aperture being arranged on a second virtual circle centered on the axis, and the second shutter has a third aperture and a fourth aperture, with centers of the third aperture and the fourth aperture being arranged on a third virtual circle centered on the axis, and
a central angle of an arc, on the second virtual circle, whose two ends respectively correspond to the centers of the first aperture and the second aperture is equal to a central angle of an arc, on the third virtual circle, whose two ends respectively correspond to the centers of the third aperture and the fourth aperture, and is equal to a central angle of an arc whose two ends respectively correspond to centers of a first of the plurality of target holders and a second of the plurality of target holders, wherein the first target holder and the second target holder are a pair of target holders that are directly adjacent each other on the first virtual circle, and wherein, of the plurality of target holders, an arrangement interval on the first virtual circle, between the first target holder and the second target holder is the largest among the arrangement intervals on the first virtual circle, between all of respective pairs each formed by two of the plurality of target holders that are directly adjacent each other on the first virtual circle,
the sputtering apparatus further comprising a controller that is configured so that when sputtering is to be performed by using only one target of the plurality of targets held by the plurality of target holders:
the first shutter is controlled such that one of the first aperture and the second aperture is arranged in front of the one target, and the other of the first aperture and the second aperture is arranged at a position shifted from in front of the plurality of targets, and
the second shutter is controlled such that one of the third aperture and the fourth aperture is arranged in front of the one target, and the other of the third aperture and the fourth aperture is arranged in front of another target of the plurality of targets, via a portion of the first shutter where the first aperture and the second aperture are not arranged,
wherein a total number of the plurality of target holders is an odd number.

US Pat. No. 9,991,102

SPUTTERING APPARATUS, FILM DEPOSITION METHOD, AND CONTROL DEVICE

CANON ANELVA CORPORATION,...

1. A storage medium storing a computer-readable program which causes a computer to function as a control device for controlling a sputtering apparatus,wherein the sputtering apparatus includes:
a substrate having a plurality of relief structures, each having four side surfaces that include two side surfaces parallel to a first direction, formed thereon;
a substrate holder configured to rotatably hold the substrate;
a target holder arranged at a position diagonally opposite to the substrate holder, and configured to support at least one sputtering target;
a position detecting means for detecting a rotational position of the two side surfaces of the relief structure of the substrate held on the substrate holder; and
a rotation driving means for controlling rotation of the substrate holder,
wherein the control device includes:
means for acquiring information on the rotational position of the two side surfaces of the relief structure of the substrate from the position detecting means;
means for generating a control signal to control the rotation driving means according to the acquired information on the rotational position of the two side surfaces of the relief structure of the substrate; and
means for transmitting the generated control signal to the rotation driving means, and
wherein the program executes a control of the rotation drive means by the control signal in such a manner that the rotation speed of the substrate when the sputtering target is located on a side in the first direction which is parallel to the two side surfaces of the relief structure and is parallel to an in-plane direction of the substrate is lower than the rotation speed of the substrate when the sputtering target is located on a side in a second direction which is perpendicular to the first direction and is parallel to the in-plane direction of the substrate.

US Pat. No. 9,966,241

SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A sputtering apparatus including a chamber, a substrate holder configured to hold a substrate in the chamber, and a target holder configured to hold a target, the sputtering apparatus comprising:a shutter arranged between the substrate holder and the target holder and having a first surface on a side of the substrate holder, a second surface on an opposite side to the first surface, and an opening;
a first shield having a third surface including a portion facing the second surface of the shutter and a fourth surface on an opposite side to the third surface;
a second shield having a fifth surface including a portion facing an end portion of the shutter and an end portion of the first shield;
a gas supply unit configured to supply a gas directly into a gas diffusion space, wherein the gas diffusion space has an annular shape and the gas diffusion space is arranged outside the first shield, wherein the gas diffusion space is at least partly defined by the fourth surface of the first shield and the fifth surface of the second shield such that the gas diffusion space is spaced apart from the shutter by at least the first shield, and wherein the gas diffusion space communicates with a first gap formed between the second surface of the shutter and the third surface of the first shield, wherein a contour of the shutter follows a contour of the first shield at least adjacent to the gas diffusion space;
a shutter rotating mechanism configured to rotate the shutter such that the target to be used for sputtering faces the substrate through the opening, wherein the shutter rotating mechanism rotates the shutter about an axis which is arranged at a center of the annular shape;
wherein the second shield includes a protruding portion protruding from the fifth surface and a portion of the protruding portion extends into the first gap between the shutter and the first shield so as to form a second gap between the protruding portion and the end portion of the shutter, wherein the first gap is larger than the second gap, and
a gas supplied into the gas diffusion space by the gas supply unit is capable of moving through the first gap toward a space near the target.

US Pat. No. 9,966,092

ION BEAM ETCHING METHOD AND ION BEAM ETCHING APPARATUS

CANON ANELVA CORPORATION,...

1. An ion beam etching method performed in an ion beam etching apparatus including an ion source that emits an ion beam to a substrate, a substrate holder that holds the substrate and changes a tilt angle of the substrate with respect to a position at which the substrate is face to face with the ion source, and a shutter that has an opening portion through which the ion beam passes and is capable of changing a position of the opening portion with respect to the substrate, the ion beam etching method comprising:holding the substrate so that the tilt angle becomes smaller as a distance is increased between the ion source and a center of a site where the ion beam passed through the opening portion is incident on the substrate; and
etching the substrate with the ion beam passing through the opening portion.

US Pat. No. 9,929,340

METHOD OF MANUFACTURING PERPENDICULAR MTJ DEVICE

CANON ANELVA CORPORATION,...

1. A method of manufacturing a perpendicular MTJ device comprising:a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and
a second stacked structure including a multilayer,
the method comprising the steps of:
forming one of the first and second stacked structures on a substrate;
inspecting one of a perpendicular magnetic anisotropy property and an MR property of the substrate with the one of the first and second stacked structures formed thereon while removing the substrate from vacuum and exposing the substrate to an atmosphere;
etching a part of a topmost layer of the one of the first and second stacked structures; and
forming an other one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.

US Pat. No. 9,905,404

SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A sputtering apparatus comprising:
a vacuum chamber;
a substrate holder configured to hold a substrate in the vacuum chamber;
a target support member configured to support a target;
a cathode magnet arranged so that the target is arranged between the substrate and the cathode magnet;
a target moving unit supported by the vacuum chamber and configured to move the target support member relative to the vacuum
chamber to adjust a distance between the target and the substrate; and

a magnet moving unit supported by the target moving unit and configured to move the cathode magnet relative to the target
moving unit to adjust a distance between the cathode magnet and the target.

US Pat. No. 9,896,760

DEPOSITION APPARATUS

CANON ANELVA CORPORATION,...

1. A deposition apparatus comprising:
a source unit configured to generate a plasma by arc discharge;
a deposition unit in which a deposition target material is arranged so as to be irradiated with the plasma generated in the
source unit; and

an induction unit configured to induce the plasma for the source unit to the deposition unit,
wherein the induction unit comprises:
a partition unit airtightly connected to each of the source unit and the deposition unit and configured to pass the plasma
inside; and

a plurality of magnet units configured to form a magnetic field to induce the plasma in the partition unit,
the plurality of magnet units are flexibly connected with a hinge mechanism to adjust a connection angle, and
the partition unit includes a tubular member bendable according to the connection angle of the plurality of magnet units.

US Pat. No. 10,083,830

SUBSTRATE CLEANING METHOD FOR REMOVING OXIDE FILM

CANON ANELVA CORPORATION,...

9. A method of cleaning a substrate surface in a substrate cleaning apparatus including a plasma-forming chamber, a substrate-cleaning treatment chamber, and a plasma-confinement electrode plate partitioning the plasma-forming chamber from the substrate-cleaning treatment chamber, the method comprising the steps of:placing a plate-shape substrate facing the face of the plasma-confinement electrode plate in the substrate-cleaning treatment chamber;
feeding a radical of plasma generated in the plasma-forming chamber from the plasma-forming chamber to the substrate-cleaning treatment chamber via a plurality of radical feed holes distributedly formed on the face of the plasma-confinement electrode plate for communicating the plasma-forming chamber with the substrate-cleaning treatment chamber; and
feeding a treatment gas which is not excited into the substrate-cleaning treatment chamber,
wherein a plasma-forming gas is fed to the plasma-forming chamber via a plurality of plasma-forming gas feed holes distributedly formed on the face of a plasma-forming gas feed shower plate, the plasma-forming gas feed shower plate being arranged in the plasma-forming chamber,
wherein a high-frequency power with a high frequency power density ranging from 0.001 to 0.25 W/cm2 is applied to a high-frequency applying electrode in a plate-shape arranged to face the plasma-confinement electrode plate in the plasma-forming chamber and extending in a lateral direction in the plasma-forming chamber,
wherein the high-frequency applying electrode has a plurality of through-holes formed penetrating from the front face to the rear face thereof, each through-hole having a larger diameter than that of a plasma-forming gas feed hole and a ratio of V2/V1 is set in a range from 0.01 to 0.8 (where V1 is the total volume of the high-frequency applying electrode including the through-holes, and V2 is the total volume of the through-holes); and
wherein the feed of the treatment gas to the substrate-cleaning treatment chamber is done, in parallel with the radical feeding, through a plurality of treatment gas feed holes formed so as to face the face of the substrate, next to at least a part of the radical feed holes of the plasma-confinement electrode plate.

US Pat. No. 9,997,386

SUBSTRATE HOLDER MOUNTING DEVICE AND SUBSTRATE HOLDER CONTAINER CHAMBER

Canon Anelva Corporation,...

1. An in-line system comprising:a substrate holder transfer path chamber in a closed loop; and
a substrate holder container chamber connected to the path chamber for one of introducing a substrate holder to the path chamber and for carrying the substrate holder in from the path chamber;
wherein the substrate holder container chamber comprises:
a moveable table that is horizontally movable in a forward direction and a rearward direction, the forward direction and the rearward direction being opposite to each other, the moveable table maintaining a plurality of substrate holders arranged side-by-side in the forward and rearward directions and, when the moveable table is moved, moving all of the plurality of substrate holders at one time in the same direction, the same direction being one of the forward direction and rearward direction;
a moveable table drive mechanism configured to move the moveable table in the forward direction and rearward direction;
a resting unit that (a) rests all of the plurality of substrate holders maintained by the movable table, (b) is moveable in an upward direction so as (i) to lift up all of the plurality of substrate holders maintained by the movable table and (ii) to separate all of the plurality of substrate holders from the movable table at one time, and (c) is moveable in a downward direction so as to lower all of the separated plurality of substrate holders onto the movable table at one time;
a resting unit drive mechanism configured to move the resting unit in the upward direction and downward direction; and
a controller configured to control the movable table drive mechanism and the resting unit drive mechanism, the controller being configured to:
(i) operate the resting unit drive mechanism to move the resting unit in the upward direction;
(ii) operate the moveable table drive mechanism to move the movable table in the forward and rearward directions while the resting unit lifts up all of the plurality of substrate holders maintained by the movable table from the movable table; and
(iii) operate, subsequently, the resting unit drive mechanism to move the resting unit in the downward direction to lower the separated plurality of substrate holders onto the moved movable table, whereby positions of all of the plurality of substrate holders maintained by the movable table are shifted on the movable table along the forward and rearward directions.

US Pat. No. 9,905,401

REACTIVE SPUTTERING APPARATUS

CANON ANELVA CORPORATION,...

1. A reactive sputtering apparatus for forming a film on a substrate by sputtering, the apparatus comprising:
a chamber;
a substrate holder provided in the chamber to hold the substrate;
a target holder which is provided in the chamber and configured to hold a target;
a deposition shield which is provided in the chamber to surround a first space above the substrate holder, and prevents a
sputter particle from adhering to an inner wall of the chamber, the deposition shield having an insertion port at a position
which is higher than a position where the substrate holder is arranged and which is lower than a position where the target
holder is arranged;

a shutter arranged near the target holder;
a cylindrical shield arranged concentric with the target holder to surround a second space between the target holder and the
shutter, the shutter being capable of separating the first space from the second space in a closed state and capable of allowing
the first space to communicate with the second space in an opened state;

a reactive gas introduction pipe having a reactive gas introduction port arranged in the insertion port of the deposition
shield so as to inwardly protrude from an inner surface of the deposition shield, a reactive gas being blown from the reactive
gas introduction port and being introduced into the first space;

an inert gas introduction pipe having an inert gas introduction port arranged in an outer space that falls outside the first
space and within the chamber, an inert gas being blown from the inert gas introduction port and being introduced into the
first space via the outer space; and

a shielding member including a member disposed inside the first space and connected to the deposition shield at a position
which is higher than the position where the insertion portion is disposed, the member extending obliquely downward to cross
a straight line connecting the target holder and the reactive gas introduction port so as to prevent a sputter particle from
the target mounted on the target holder from adhering to the reactive gas introduction port when the film is formed on the
substrate by sputtering of the target.

US Pat. No. 10,141,208

VACUUM PROCESSING APPARATUS

Canon Anelva Corporation,...

1. A vacuum processing apparatus comprising:a vacuum vessel in which vacuum processing can be performed;
a substrate holder capable of holding a substrate;
a tilting unit capable of making said substrate holder pivot about a pivotal axis and tilting the substrate held by said substrate holder with respect to a process source provided in said vacuum vessel;
a cooling device provided in said substrate holder and configured to act together with a compression device provided outside said vacuum vessel to cool the substrate held by said substrate holder; and
a rotary joint provided in said tilting unit and including a supply path configured to supply a coolant gas from said compression device to said cooling device and an exhaust path configured to exhaust the coolant from said cooling device to said compression device,
wherein said rotary joint comprises:
a fixed portion fixed to said vacuum vessel;
a pivotal portion provided so as to pivot with respect to said fixed portion and fixed to said substrate holder; and
a gas guide path provided in one of said fixed portion and said pivotal portion and configured to communicate a space region formed between the supply path and the exhaust path and guide the coolant gas that has leaked from one of the supply path and the exhaust path in the space region, where said fixed portion faces said pivotal portion and the supply path and the exhaust path are separated, to an outside of said rotary joint.

US Pat. No. 10,062,551

SPUTTERING APPARATUS AND SUBSTRATE PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

1. A substrate processing apparatus comprising:a conveyance chamber having a plurality of connection surfaces, an angle defined by adjacent connection surfaces of the plurality of connection surfaces being larger than 90° ; and
a sputtering apparatus connected to one of the plurality of connection surfaces via a gate valve, the sputtering apparatus comprising:
a sputtering chamber,
a substrate holder configured to hold a substrate in the sputtering chamber and rotate about an axis perpendicular to a surface on which the substrate is held, the substrate being conveyed along a conveying direction between an internal space of the conveyance chamber and an internal space of the sputtering chamber, and
first to fourth target holders configured to respectively hold targets, and not including any other target holders, and each of the first to fourth target holders is configured to hold a target in a posture in which a surface of the target is inclined with respect to a surface of the substrate held by the substrate holder,
a shutter unit configured to select a target to be used for sputtering from four targets respectively held by the first to fourth target holders,
wherein the first to fourth target holders are arranged, in a plan view, on vertices of a virtual rectangle having long sides and short sides and inscribed in a virtual circle centered on the axis such that the first to fourth target holders and the four targets are arranged within the sputtering chamber in the plan view,
wherein the first target holder and the second target holder are respectively arranged on two vertices defining one short side of the virtual rectangle in a width-wise direction of the sputtering chamber, which is perpendicular to the conveying direction, and distances from the first target holder and the second target holder to the gate valve are shorter than distances from the third target holder and the fourth target holder to the gate valve, a distance between a center of the first target holder and the gate valve in the conveying direction being smaller than a distance between the first target holder and the fourth target holder in the conveying direction, and
first to fourth magnet units arranged on the sputtering chamber, in respective association with the first to fourth target holders, wherein a part of each of the first to fourth magnet units is arranged outside the sputtering chamber in plan view, such that a distance between the parts of the first and second magnet units is longer than the width of the sputtering chamber.

US Pat. No. 10,425,990

VACUUM PROCESSING DEVICE

CANON ANELVA CORPORATION,...

1. A vacuum processing device comprising:a vacuum chamber;
a substrate support configured to support a substrate in said vacuum chamber;
a heater arranged to face a processing surface of the substrate supported by said substrate support;
a cooler arranged to face a reverse surface of the substrate supported by said substrate support;
a temperature correction unit configured to correct a temperature of a periphery of the substrate in order to reduce a temperature difference between a central portion and the periphery of the substrate by being arranged in a predetermined position between the substrate supported by said substrate support and said cooler when said heater heats the substrate; and
a correction unit moving unit configured to move said temperature correction unit between the predetermined position and a retraction position retracted from the predetermined position,
wherein said substrate support can is configured to move the substrate to a heating position where said heater heats the substrate, and a cooling position where said cooler cools the substrate,
wherein said substrate support includes:
a first support configured to support the substrate in the heating, position; and
a second support configured to receive the substrate supported by said first support in the heating position, and move the substrate to the cooling position,
wherein said correction unit moving unit is configured to have retracted said temperature correction unit to the retraction position in a timing where said second support receives the substrate from the first support in the heating position.

US Pat. No. 10,153,426

MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT

CANON ANELVA CORPORATION,...

1. A manufacturing method of a magnetoresistive effect element comprising:a first step of forming a tunnel barrier layer on a substrate, on a surface of which a magnetization free layer is formed;
a second step of cooling the substrate after the first step;
a third step of forming a magnetization fixed layer on the tunnel barrier layer after the second step;
a fourth step of raising a temperature of the substrate after the third step to a temperature that is higher than a dew-point temperature and is lower than a crystallization temperature of the magnetization fixed layer;
a fifth step of forming a pin layer after the fourth step;
a sixth step of forming a top electrode after the fifth step; and
a seventh step of raising the temperature of the substrate after the sixth step, to a temperature equal to or higher than the crystallization temperature.

US Pat. No. 10,433,410

X-RAY GENERATION APPARATUS AND X-RAY PHOTOGRAPHY SYSTEM

Canon Anelva Corporation,...

1. An X-ray generation apparatus, comprising:an X-ray tube;
a drive circuit that drives the X-ray tube;
a voltage generation circuit that generates an electron acceleration voltage applied to the X-ray tube; and
a control unit that communicates with the drive circuit, wherein
at least the X-ray tube, the drive circuit, and the voltage generation circuit are arranged inside a storage container filled with an insulating oil,
at least a part of a path connecting the drive circuit and the control unit is formed of an optical fiber cable arranged inside the storage container, and
the optical fiber cable has electric field mitigation means for suppressing an electric field occurring due to a potential difference between the drive circuit and the control unit from locally concentrating along a longitudinal direction of the optical fiber cable.

US Pat. No. 10,236,199

SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

CANON ANELVA CORPORATION,...

3. A substrate processing method of using a substrate processing apparatus including at least a first processing chamber, a second processing chamber, and a retraction chamber to execute, for a plurality of substrates, a series of processing including first processing of processing a substrate in the first processing chamber, second processing of processing the substrate in the second processing chamber after the first processing, and third processing of performing processing, different from the first processing, for the substrate in the first processing chamber after the second processing, comprising:an input step of accepting input of transport order information which specifies an order in which the substrates are transported into a plurality of processing chambers to process the substrates in the plurality of processing chambers, and processing condition information which specifies a substrate processing condition in each of the plurality of processing chambers;
a generation step of generating process route information which specifies a substrate transport route, including a recovery process of retracting the substrates into the retraction chamber in the series of processing, from the transport order information and the processing condition information which are accepted in the input step,
a first execution step of executing the first processing for the plurality of substrates, and executing the second processing for the substrates having undergone the first processing;
a recovery step of recovering the plurality of substrates having undergone the first processing and the second processing to the retraction chamber;
a conditioning step of, after completion of the first processing for the last substrate among the plurality of substrates, loading a dummy substrate into the first processing chamber, executing the third processing for the dummy substrate, and unloading the dummy substrate from the first processing chamber; and
a second execution step of, after the dummy substrate is unloaded from the first processing chamber in the conditioning step, loading the substrates recovered in the recovery step into the first processing chamber, and executing the third processing for the substrates loaded into the first processing chamber,
wherein in the recovery step, processing of recovering the substrates into the retraction chamber is executed in accordance with the process route information generated in the generation step.

US Pat. No. 10,378,100

SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF

CANON ANELVA CORPORATION,...

1. A sputtering method which uses a sputtering apparatus comprising a sputtering cathode supporting a target, a substrate support holder supporting a substrate and attached to a rotating axis perpendicular to the substrate, a rotation drive mechanism for rotating the substrate support holder attached to the rotating axis, and a control unit for controlling the rotation drive mechanism, where the sputtering cathode is provided so as to be inclined with respect to a surface of the substrate that is exposed to the target side and where the sputtering method deposits a forming material having a film thickness of 10 nm or less on a film forming surface of the substrate by introducing sputtering particles from the target toward the film forming surface of the substrate from an oblique direction with respect to the film forming surface, the method comprising the steps of:a first step of generating plasma between the sputtering cathode and the substrate support holder in a fully closed state in which a shutter is disposed between the sputtering cathode and the substrate support holder by turning on a power supply means for supplying electric power to the sputtering cathode and supplying electric power to the sputtering electrode;
after the first step, a second step of moving the shutter from the fully closed state to a fully opened state such that the target is exposed on the substrate;
a third step of recording, in the control unit, a first digital value relating to a value of a deposition time T of the film forming material on the substrate, a second digital value relating to a value of a total whole number of rotations N of the substrate support holder, and a third digital value relating to a value of a fractional number of rotations a of the substrate support holder, N being a positive integer and a being a positive decimal number;
after the third step, a fourth step of calculating X=N+? and V·T=N+? in the control unit based on the first, second and third digital values, where V is the rotational velocity of the substrate support holder and X is the total number of rotations of the substrate support holder;
a fifth step of rotating the substrate support holder while controlling the rotation drive mechanism using the control unit at the rotational velocity V, the total number of rotations X and the deposition time T satisfying the relationship of X=N+? and V·T=N+? calculated in the fourth step; and
after the fifth step, a sixth step of moving the shutter from the fully opened state to the fully closed state,
wherein the deposition time T is determined by controlling the shutter using the control unit so that the shutter in the second step is in the fully opened state and the shutter in the sixth step is in the fully closed state.

US Pat. No. 10,388,491

ION BEAM ETCHING METHOD OF MAGNETIC FILM AND ION BEAM ETCHING APPARATUS

CANON ANELVA CORPORATION,...

1. An ion beam etching method of a magnetic film using an ion beam etching apparatus which has a discharge vessel and an RF antenna comprising a coil comprising steps of:introducing a first carbon-containing gas from a first gas introduction part formed in the discharge vessel to a plasma generation portion of an ion beam etching apparatus;
applying a high frequency to the RF antenna, thereby generating gas plasma inside the plasma generation portion;
extracting ions from the plasma to form an ion beam; and
etching a magnetic film of a magnetoresistive effect element formed on a substrate by the ion beam,
wherein the etching includes (a) a first process of introducing the first carbon-containing gas in an amount selected based on an exchange frequency of the discharge vessel caused by carbon polymers formed in the discharge vessel into the plasma generation portion from the first gas introduction part provided in the plasma generation portion, generating the gas plasma inside the plasma generation portion and extracting ions from the plasma in the plasma generation portion in which the plasma is generated to form the ion beam by a grid provided on the boundary between the plasma generation portion and a processing space in which the substrate is placed, and after the first process, (b) a second process of introducing a second carbon-containing gas into the processing space in which the plasma is not generated from a second gas introduction part provided in the processing space which is separated from the plasma generation portion by the grid, and
wherein, during the etching, the magnetic film formed on the substrate is etched by the ion beam formed in the first process and the second carbon-containing gas.

US Pat. No. 9,472,384

ELECTRONIC DEVICE MANUFACTURING METHOD AND SPUTTERING METHOD

Canon Anelva Corporation,...

1. A shield member used in a vacuum container, which includes a target holder configured to hold a target and a substrate
holder configured to connect an up-and-down mechanism capable of moving the substrate holder in a vertical direction and configured
to have a substrate placement surface capable of having one substrate placed thereon, the shield member comprising:
a first member capable of being arranged between the substrate holder and the target holder and configured to set, by an operation
of a first rotation driving unit, a closed state in which the substrate holder is shielded from the target holder or an open
state in which the substrate holder is opened to the target holder, wherein when the first member is inserted between the
substrate holder and the target holder, the first member sets the closed state, and when the first member is retreated from
between the substrate holder and the target holder, the first member sets the open state; and

a second member which is arranged, in contact with the substrate placement surface, on a side of the substrate placement surface
of the substrate holder and at both outer peripheral edge portions of the one substrate and is configured to have a ring shape
capable of holding both outer peripheral edge portions,

wherein a first concentric projecting portion, extending in a direction of the second member and having at least one ring
shape, is formed in contact with a surface of the first member, and

wherein a second concentric projecting portion, engaging with the first concentric projecting portion in a noncontact state
at a position when the first member is inserted between the substrate holder and the target holder by the first rotation driving
unit and the substrate holder is moved up by the up-and-down mechanism and the substrate holder comes close to the first member,
and extending in a direction of the first member and having at least one ring shape, is formed on a surface of the second
member.