US Pat. No. 9,293,648

LIGHT EMITTER WITH A CONDUCTIVE TRANSPARENT P-TYPE LAYER STRUCTURE

BOLB INC., San Jose, CA ...

1. A light emitting device comprising:
an n-type layer;
a p-type layer structure;
a layer of p-type nano-dots imbedded in the p-type layer structure, and
an active region sandwiched between the n-type layer and the p-type layer structure.

US Pat. No. 9,472,716

LATTICE-CONSTANT FORMATTED EPITAXIAL TEMPLATE FOR LIGHT EMITTING DEVICES AND A METHOD FOR MAKING THE SAME

BOLB INC., San Jose, CA ...

1. A light emitting device comprising:
an n-type layer;
a p-type layer;
an active region sandwiched between the n-type layer and the p-type layer; and
a lattice constant formatted epitaxial template;
wherein the lattice constant formatted epitaxial template has a growing surface on which the n-type layer grows, and the growing
surface comprises a plurality of first material portions and a plurality of second material portions with each of the first
material portions being alternately arranged with each of the second material portions, and wherein lattice constants of the
first material portions are different from those of the second material portions.

US Pat. No. 9,401,455

ULTRAVIOLET LIGHT-EMITTING DEVICE WITH LATERAL TUNNEL JUNCTIONS FOR HOLE INJECTION

BOLB INC., San Jose, CA ...

1. An ultraviolet light-emitting device with a lateral tunnel junction for hole injection comprising:
an n-type layer;
a p-type layer;
an active region sandwiched between the n-type layer and the p-type layer; and
a PN tunnel junction structure formed on the p-type layer, the PN tunnel junction structure comprising:
a p-type structure including a plurality of alternately laminated p-AlGaN barrier layers and p-AlGaN well layers, and
an n-type structure including a plurality of alternately laminated n-AlGaN barrier layers and n-AlInGaN well layers, with
the p-type structure facing the p-type layer;

wherein the p-AlGaN barrier layers have a larger Al-composition than that of the p-AlGaN well layers to ensure a valence band
offset therebetween not less than 300 meV, the n-AlGaN barrier layers have a larger Al-composition than that of the n-AlInGaN
well layers to ensure a conduction band offset therebetween not less than 200 meV;

wherein the p-AlGaN barrier layers and the n-AlGaN barrier layers are respectively doped with acceptors and donors of a dopant
concentration in the range of 5×1019 cm?3 to 5×1020 cm?3;

wherein the p-type structure has a plurality of projections extending from its surface, each of the projections contains numerous
alternately laminated p-AlGaN barrier layers and p-AlGaN well layers with edges of the p-AlGaN barrier layers and the p-AlGaN
well layers being exposed by sidewalls of the projections;

wherein the n-type structure has a plurality of projections extending from its surface, each of the projections contains numerous
alternately laminated n-AlGaN barrier layers and n-AlInGaN well layers with edges of the n-AlGaN barrier layers and the n-AlInGaN
well layers being exposed by sidewalls of the projections;

wherein the n-type structure is formed on the p-type structure with the projections of the n-type structure fully filling
void portions of the p-type structure, wherein the void portions of the p-type structure are defined by and surround the projections
of the p-type structure.

US Pat. No. 9,553,232

LIGHT EMITTER WITH A CONDUCTIVE TRANSPARENT P-TYPE LAYER STRUCTURE

BOLB INC., San Jose, CA ...

9. A method of forming a vertically conductive UV transparent p-type structure, comprising steps:
forming a smooth p-type AlGaN layer on a light emitting active-region of a light emitting device via metalorganic chemical
vapor deposition at a temperature of 1000-1050° C.;

forming a p-type AlGaN layer on the smooth p-type AlGaN layer via metalorganic chemical vapor deposition at a temperature
of 1000-1050° C., wherein the Al-composition of the smooth p-type AlGaN layer is 5-10% higher than an Al-composition of the
p-type AlGaN layer;

forming a p-type InGaN layer with an In-composition of 0-10% and a nominal thickness of 1-5 nm on the p-type AlGaN layer in
Stranski-Krastanov growth mode via metalorganic chemical vapor deposition at a temperature of 800-1000° C., so that the p-type
InGaN layer is formed with a wetting layer portion and nano-dots, wherein the nano-dots possess a sheet density of 1010 to 1012 cm?2, a lateral dimension of 2-20 nm, a vertical dimension of 1-5 nm.

US Pat. No. 9,715,058

ULTRAVIOLET LIGHT DEVICE

BOLB INC., San Jose, CA ...

1. A light panel, comprising:
a lightguide having an input port for receiving light, the input port is disposed on a bottom surface of the lightguide;
a beam reflector disposed on a top surface of the lightguide, the beam reflector reflects at least a portion of the light;
a mirror disposed on the bottom surface of the lightguide, the mirror reflects a portion of the light toward the top surface
of the lightguide; and

a plurality of light scattering features disposed on the bottom surface of the lightguide, the plurality of light scattering
features reflects a portion of the light toward the top surface of the lightguide,

wherein a portion of the lightguide is removed to form a cavity in the lightguide and the beam reflector includes a light
reflecting layer deposited on the cavity, the beam reflector includes a plurality of via holes for transmitting a portion
of the light therethrough and a number density of the plurality of via holes is proportional to a distance from a center of
the beam reflector.

US Pat. No. 10,368,411

ULTRAVIOLET LIGHT MODULE HAVING OUTPUT POWER CONTROL MECHANISM

BOLB Inc., Livermore, CA...

1. An apparatus for generating light, comprising:a substrate;
a light source mounted on a top surface of the substrate, the light source generates output light;
a detector mounted on the top surface of the substrate, the detector detects light incident thereon; and
a waveguide consisting of a single body having a shape of a polygonal prism, a base of the polygonal prism consists of five sides so that the polygonal prism has five flat side surfaces, one of the five flat side surfaces including a first portion that is in direct contact with the light source and a second portion that is in direct contact with the detector, wherein a portion of the output light enters the waveguide through the first portion, travels through the waveguide and exits the waveguide through the second portion to the detector,
wherein the light source includes a top surface and emits the output light through the top surface and wherein a surface area of the light source where the first portion of the one of the five flat side surfaces directly contacts the top surface of the light source is less than an entire area of the top surface of the light source.

US Pat. No. 10,177,267

PHOTODETECTOR

BOLB INC., San Jose, CA ...

1. An UV photodetector comprising:a substrate;
a template layer formed on the substrate;
an intrinsic AlGaN layer formed on the template layer;
a first n-type AlGaN layer and a second n-type AlGaN layer formed on the intrinsic AlGaN layer side-by-side and separated by a gap, wherein the gap exposes the intrinsic AlGaN layer;
a p-type layer formed on the second n-type AlGaN layer;
an n-type ohmic contact formed on the first n-type AlGaN layer; and
a p-type ohmic contact formed on the p-type layer, wherein the p-type ohmic contact is positively biased against the n-type ohmic contact when in use.

US Pat. No. 10,276,746

POLARIZATION ELECTRIC FIELD ASSISTED HOLE SUPPLIER AND P-TYPE CONTACT STRUCTURE, LIGHT EMITTING DEVICE AND PHOTODETECTOR USING THE SAME

BOLB INC., San Jose, CA ...

1. A hole supplier and p-contact structure for a light emitting device or a photodetector, comprising:a p-type group III nitride structure; and
a hole supplier and p-contact layer made of Al-containing group III nitride formed on the p-type group III nitride structure and being under a biaxial in-plane tensile strain,
wherein the hole supplier and p-contact layer has a thickness in the range of 0.6-10 nm, a room-temperature acceptor activation ratio of the hole supplier and p-contact layer is larger than 1%, and the p-type group III nitride structure is formed over an active region of the light emitting device or photodetector.

US Pat. No. 9,472,716

LATTICE-CONSTANT FORMATTED EPITAXIAL TEMPLATE FOR LIGHT EMITTING DEVICES AND A METHOD FOR MAKING THE SAME

BOLB INC., San Jose, CA ...

1. A light emitting device comprising:
an n-type layer;
a p-type layer;
an active region sandwiched between the n-type layer and the p-type layer; and
a lattice constant formatted epitaxial template;
wherein the lattice constant formatted epitaxial template has a growing surface on which the n-type layer grows, and the growing
surface comprises a plurality of first material portions and a plurality of second material portions with each of the first
material portions being alternately arranged with each of the second material portions, and wherein lattice constants of the
first material portions are different from those of the second material portions.