US Pat. No. 9,378,992

HIGH THROUGHPUT HEATED ION IMPLANTATION SYSTEM AND METHOD

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
an ion implantation apparatus configured to direct an ion beam toward a process chamber, wherein the process chamber has a
vacuum environment associated therewith at a vacuum pressure;

a first dual load lock assembly and a second dual load lock assembly, wherein each of the first dual load lock assembly and
second dual load lock assembly respectively comprises a first chamber and a second chamber, wherein respective internal volumes
of each first and second chamber are generally isolated from one another and share a common wall therebetween, and wherein
each of the first chamber and second chamber has a respective vacuum door and atmospheric door, wherein each respective vacuum
door is configured to provide selective fluid communication between the respective first chamber or second chamber and the
vacuum environment, and wherein each respective atmospheric door is configured to provide selective fluid communication between
the respective first chamber or second chamber and an atmospheric environment having an atmospheric pressure associated therewith,
and wherein each first chamber has a pre-heat apparatus associated therewith, wherein the pre-heat apparatus is configured
to heat a workpiece disposed within the respective first chamber, and wherein each second chamber has a post-cool apparatus
associated therewith, wherein the post-cool apparatus is configured to cool the workpiece disposed within the respective second
chamber; and

a controller configured to activate each respective pre-heat apparatus to transmit heat energy to the respective workpiece
at the atmospheric pressure, therein raising a temperature of the respective workpiece to a first predetermined temperature,
and wherein the controller is further configured to activate each respective post-cool apparatus to cool the respective workpiece
to a second predetermined temperature.

US Pat. No. 9,281,227

MULTI-RESISTIVITY JOHNSEN-RAHBEK ELECTROSTATIC CLAMP

Axcelis Technologies, Inc...

1. A Johnsen-Rahbek (J-R) electrostatic clamp for clamping a workpiece, the electrostatic clamp comprising:
a dielectric layer having a clamping surface associated with the workpiece and a backside surface generally opposing the clamping
surface, wherein the dielectric layer comprises a plurality of regions extending between the clamping surface and the backside
surface, and wherein each of the plurality of regions comprises one of a plurality of dielectric materials, wherein each of
the plurality of dielectric materials has a baseline resistivity that is different from the remainder of the plurality of
dielectric materials, and wherein each of the plurality of regions of the dielectric layer has a baseline resistivity that
is different from the remainder of the plurality of regions of the dielectric layer; and

a plurality of electrically conductive electrodes associated with the backside surface of the dielectric layer, wherein each
of the plurality of electrically conductive electrodes are associated with one or more of the plurality of regions of the
dielectric layer.

US Pat. No. 9,218,941

ION IMPLANTATION SYSTEM AND METHOD WITH VARIABLE ENERGY CONTROL

Axcelis Technologies, Inc...

1. An ion implantation system configured to provide a selectively variable energy ion beam to a workpiece, comprising:
an ion source configured to ionize a dopant material for generating an ion beam;
a mass analyzer positioned downstream of the ion source, configured to provide a mass resolved ion beam;
a deceleration/acceleration stage positioned downstream of the mass analyzer configured to receive the mass resolved ion beam
to produce the selectively variable energy ion beam;

an end station positioned downstream of the deceleration/acceleration stage, wherein the end station includes a workpiece
support configured to selectively position the workpiece before the selectively variable energy ion beam for ion implantation
thereby;

a scanning apparatus configured to scan one or more of the ion beam and workpiece support with respect to one another;
one or more power sources operably coupled to one or more of the ion source, mass analyzer, and deceleration/acceleration
stages; and

a controller coupled to said one or more power sources and configured to selectively vary at least a bias voltage supplied
to the deceleration/acceleration stage concurrent with the scanning of the ion beam and/or workpiece support, wherein the
selective variation of the at least one bias voltage supplied to the deceleration/acceleration stage is based, at least in
part, on a position of the ion beam with respect to the workpiece to provide a selectively variable energy ion beam thereto.

US Pat. No. 9,318,302

INTEGRATED EXTRACTION ELECTRODE MANIPULATOR FOR ION SOURCE

Axcelis Technologies, Inc...

1. A modular ion source and extraction apparatus, comprising:
an ion source chamber selectively electrically coupled to a voltage potential, wherein the ion source chamber comprises an
extraction aperture;

an extraction electrode system positioned proximate to the extraction aperture of the ion source chamber, wherein the extraction
electrode system is configured to extract ions from the ion source chamber via one or more extraction electrodes;

one or more linkages operably coupled to the ion source chamber;
one or more insulators coupling the extraction electrode system to the respective one or more linkages, wherein the one or
more insulators electrically insulate the respective one or more linkages from the extraction electrode system, therein electrically
insulating the extraction electrode system from the ion source chamber; and

one or more actuators operably coupling the one or more linkages to the ion source chamber, wherein the one or more actuators
are configured to translate the one or more linkages with respect to the ion source chamber, therein translating the extraction
electrode along one or more axes.

US Pat. No. 9,111,719

METHOD FOR ENHANCING BEAM UTILIZATION IN A SCANNED BEAM ION IMPLANTER

Axcelis Technologies, Inc...

14. A dosimetry switching apparatus for a scanned ion beam implantation system, the dosimetry system comprising:
a workpiece support configured to support a workpiece with respect to a scanned ion beam;
one or more side Faraday cups positioned along a path of the scanned ion beam, wherein the one or more side Faraday cups are
configured to sense a current of the ion beam, and wherein the one or more side Faraday cups are separated from the workpiece
by a distance associated with a diameter of the workpiece;

a dosimeter configured to determine a current of the scanned ion beam based on the current sensed by the one or more side
Faraday cups; and

configured to selectively electrically connect the one or more side Faraday cups to the dosimeter concurrent with a wide scan
of scanned ion beam and wherein the controller is further configured to selectively electrically connect the one or more side
Faraday cups to ground concurrent with a narrow scan of the scanned ion beam, wherein the narrow scan of the scanned ion beam
is generally defined by reversing a direction of scanning of the scanned ion beam at a position associated with an edge of
the workpiece, and wherein the wide scan of the scanned ion beam is generally defined by reversing a direction of scanning
of the scanned ion beam at a position associated with an outboard region of the one or more side Faraday cups.

US Pat. No. 9,443,698

HYBRID SCANNING FOR ION IMPLANTATION

Axcelis Technologies, Inc...

17. A method of operating a hybrid scanner to scan an ion beam, the method comprising:
selecting one of an electric scanning mode and a magnetic scanning mode, wherein both of the electric scanning mode and the
magnetic scanning mode are available to be employed with the hybrid scanner;

on selecting the magnetic scanning mode, generating a periodically varying magnetic field across the ion beam; and
on selecting the electric scanning mode, generating a periodically varying electric field across the ion beam, via a plurality
of electric elements comprising at least one pair of scan plates, wherein the at least one pair of scan plates form a plurality
of loops having cuts defined therein, thereby preventing circulating diamagnetic currents to flow while permitting magnetic
scanning in the hybrid scanner;

providing power to scanning elements associated with the selected scanning mode and withholding power from scanning elements
not associated with the selected scanning mode;

wherein providing power is performed by a power delivery controller operably coupled to at least one magnetic element and
at least one of electric element and configured to provide power to the scanning elements associated with the selected scanning
modes and to withhold power from scanning elements not associated with the selected scanning mode.

US Pat. No. 9,064,673

WORKPIECE CARRIER

Axcelis Technologies, Inc...

1. A workpiece carrier, comprising:
a first plate having a first outer diameter, a first inner diameter, and a first recess extending a first distance from the
first inner diameter toward the first outer diameter;

a second plate having a second outer diameter, a second inner diameter, and a second recess extending a second distance from
the second inner diameter toward the second outer diameter; and

a plurality of mating features associated with the first plate and second plate, wherein the plurality of mating features
are configured to selectively fix a position of a first workpiece between the first plate and second plate within the first
recess and second recess, wherein the first outer diameter is associated with a diameter of a second workpiece, and wherein
a diameter of the first workpiece is less than the diameter of the second workpiece.

US Pat. No. 9,502,207

CAM ACTUATED FILAMENT CLAMP

AXCELIS TECHNOLOGIES, INC...

1. An ion source filament clamp, comprising:
a clamp member having a first end and a second end, wherein the first end comprises one of a cam surface and a cam follower,
and wherein the clamp member comprises first and second portions associated with the first end thereof that are opposed to
one another and separated by a slot, wherein a lead opening is further defined in the slot and configured to receive a lead
of an ion source filament;

an actuator pin extending along an actuator pin axis, wherein a first section of the actuator pin is coupled to the first
portion of the clamp member, and wherein the actuator pin extends through a thru-hole in the second portion of the clamp member
and is in sliding engagement with the thru-hole; and

a cam member operably coupled to a second section of the actuator pin, wherein the cam member comprises a handle and the other
of the cam surface and cam follower, wherein the cam member is configured to rotate between a clamped position and an unclamped
position, wherein the cam follower is configured to slidingly contact the cam surface, and wherein in the clamped position,
the cam follower is configured to engage the cam surface in a first predetermined manner, and wherein in the unclamped position,
the cam follower is configured to engage the cam surface in a second predetermined manner, wherein in the clamped position,
the first and second portions of the clamp member are forced toward one another, therein exerting a clamping pressure on the
lead within the lead opening, and wherein in the unclamped position, the first and second portions of the clamp member are
forced apart from one another, therein releasing the clamping pressure on the lead within the lead opening, wherein one of
the first predetermined manner and second predetermined manner comprises inducing a spring tension between the first and second
portions of the clamp member, and wherein the other of the first predetermined manner and second predetermined manner comprises
releasing the spring tension between the first and second portions of the clamp member.

US Pat. No. 9,147,554

USE OF BEAM SCANNING TO IMPROVE UNIFORMITY AND PRODUCTIVITY OF A 2D MECHANICAL SCAN IMPLANTATION SYSTEM

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
a beamline configured to direct an ion beam toward an end station configured to hold or support a workpiece;
a scanning system configured to scan the end station configured to hold or support the workpiece past the ion beam in a two-dimensional
fashion comprising a first scan axis along a first direction and a second scan axis along a second direction that is different
than the first direction; and

a supplemental scanning component operably associated with the scanning system, and configured to effectuate a scanning of
the ion beam with respect to the end station along a third scan axis having a third direction that is different than the first
direction,

wherein the supplemental scanning component is configured to selectively scan the ion beam along the third scan axis with
one of a linear scan waveform or a non-linear scan waveform as a function of an indicated width of the scanning along the
third scan axis.

US Pat. No. 9,048,276

MATCHED COEFFICIENT OF THERMAL EXPANSION FOR AN ELECTROSTATIC CHUCK

Axcelis Technologies, Inc...

1. An electrostatic clamp for selectively maintaining a position of a workpiece, the electrostatic clamp comprising:
a backing plate for providing structural support and rigidity to the electrostatic clamp, wherein the backing plate has a
first coefficient of thermal expansion associated therewith, wherein the backing plate consists of a metal, therein defining
a metallic backing plate; and

a clamping plate having a clamping surface configured to contact the workpiece, wherein the clamping plate has a second coefficient
of thermal expansion associated therewith, wherein the clamping plate comprises a ceramic material, therein defining a ceramic
clamping plate, wherein the clamping plate is bonded to the backing plate, and wherein the first coefficient of thermal expansion
and second coefficient of thermal expansion are minimized, with a maximum difference determined by the geometry of the electrostatic
clamp.

US Pat. No. 10,074,508

LOW CONDUCTANCE SELF-SHIELDING INSULATOR FOR ION IMPLANTATION SYSTEMS

Axcelis Technologies, Inc...

1. An insulator, comprising an elongate body having a first end and a second end, wherein the elongate body comprises a surface that is electrically insulative, wherein the elongate body has one or more features defined therein, and wherein the one or more features increase a gas conductance path from the first end to the second end.

US Pat. No. 10,041,789

INTEGRATED EMISSIVITY SENSOR ALIGNMENT CHARACTERIZATION

Axcelis Technologies, Inc...

1. A workpiece alignment system, comprising:a first light emission apparatus configured to direct a first beam of light along a first path toward a first side of a workpiece plane associated with a workpiece;
a first light receiver apparatus positioned along the first path and configured to receive the first beam of light on a second side of the workpiece plane, wherein the second side is opposite the first side;
a workpiece support configured to selectively support the workpiece along the workpiece plane;
a rotation device operably coupled to the workpiece support and configured to selectively rotate the workpiece support about a support axis;
a second light emission apparatus positioned on one of the first side and second side of the workpiece plane and configured to direct a second beam of light along a second path, wherein the second path is associated with a peripheral region of the workpiece;
a second light receiver apparatus configured to receive the second beam of light concurrent with the rotation of the workpiece support; and
a controller configured to determine a transmissivity of the workpiece based on a total initial emittance of the first beam of light from the first light emission apparatus and a transmitted amount of the first beam of light that is received through the workpiece by the first light receiver apparatus when the workpiece fully intersects the first path, and wherein the controller is further configured to determine a position of the workpiece with respect to the support axis when the workpiece is supported and rotated via the workpiece support, wherein the determination of the position of the workpiece is based, at least in part, on a rotational position of the workpiece support, at least a portion of the second beam of light received by the second light receiver apparatus associated with the rotational position of the workpiece support, and the transmissivity of the workpiece.

US Pat. No. 9,490,185

IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION

AXCELIS TECHNOLOGIES, INC...

1. An ion implantation system, comprising:
an ion implantation apparatus configured to provide a spot ion beam having a beam density associated therewith to a workpiece,
wherein the workpiece has a crystalline structure associated therewith;

a scanning system configured to iteratively scan one or more of the spot ion beam and the workpiece with respect to one another
along one or more axes;

a controller configured to establish a predetermined localized temperature of the workpiece as a predetermined location on
the workpiece is exposed to the spot ion beam, wherein a predetermined localized disorder of the crystalline structure of
the workpiece is established at the predetermined location, and wherein the controller is configured to control one or more
of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature
of the workpiece at the predetermined location on the workpiece.

US Pat. No. 10,087,520

IMPLANTATION USING SOLID ALUMINUM IODIDE (ALI3) FOR PRODUCING ATOMIC ALUMINUM IONS AND IN SITU CLEANING OF ALUMINUM IODIDE AND ASSOCIATED BY-PRODUCTS

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:an ion source configured to form an ion beam from aluminum iodide;
a beamline assembly configured to selectively transport the ion beam;
an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece;
a water delivery system configured to introduce water or water vapor to one or more of the ion source, beamline assembly, and end station, wherein the water delivery system is configured to react the water or water vapor with residual aluminum iodide formed on one or more internal surfaces of one or more the ion source, beamline assembly, and end station; and
a vacuum system configured to substantially evacuate one or more of the ion source, beamline assembly, and end station, wherein the vacuum system is further configured to substantially remove one or more products of the reaction of the water or water vapor with the reacted residual aluminum iodide from the respective ion source, beamline assembly, and end station.

US Pat. No. 9,633,885

VARIABLE ELECTRODE PATTERN FOR VERSATILE ELECTROSTATIC CLAMP OPERATION

Axcelis Technologies, Inc...

1. An electrostatic clamping system, comprising:
an electrostatic clamp having a clamping surface associated therewith, wherein the electrostatic clamp comprises a first pair
of electrodes and a second pair of electrodes, wherein each of the first pair of electrodes are associated with a respective
one-third of the clamping surface, and wherein each of the second pair of electrodes are associated with a respective one-sixth
of the clamping surface;

a power supply configured to selectively output a DC clamping voltage and a three-phase AC clamping voltage; and
a controller configured to selectively operate the electrostatic clamp in a DC mode and an AC mode, wherein the DC mode electrically
connects one of the first pair of electrodes and one of the second pair of electrodes to a positive terminal of the power
supply and the other one of the first pair of electrodes and other one of the second pair of electrodes to a negative terminal
of the power supply, and wherein the AC mode electrically connects a first phase terminal of the power supply to one of the
first pair of electrodes, a second phase terminal of the power supply to the other one of the first pair of electrodes, and
a third phase terminal of the power supply to both of the second pair of electrodes.

US Pat. No. 9,236,216

IN-VACUUM HIGH SPEED PRE-CHILL AND POST-HEAT STATIONS

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
a process chamber having a process environment associated therewith that is substantially evacuated;
an ion implantation apparatus configured to provide a plurality of ions to a workpiece positioned in the process chamber;
a chuck configured to support the workpiece within the process chamber during an exposure of the workpiece to the plurality
of ions, wherein the chuck is configured to cool the workpiece to a processing temperature;

a load lock chamber operably coupled to the process chamber, wherein the load lock chamber is configured to isolate the process
environment from an external environment, and wherein the load lock chamber comprises a workpiece support configured to support
the workpiece during a transfer of the workpiece between the process chamber and external environment; and

a pre-chill station positioned within the process chamber, wherein the pre-chill station comprises a chilled workpiece support
that is separate from the chuck and is configured to cool the workpiece to a first temperature;

a chilled workpiece holding station positioned within the process chamber, wherein the chilled workpiece holding station comprises
a cold workpiece support configured to receive and support the workpiece transferred thereto from the pre-chill station, and
wherein the cold workpiece support is further configured to maintain the first temperature of the workpiece while the workpiece
resides thereon;

a post-heat station positioned within the process chamber and in continuous fluid communication with the process environment,
wherein the post-heat station comprises a heated workpiece support configured to heat the workpiece to a second temperature;

a heated workpiece holding station positioned within the process chamber, wherein the heated workpiece holding station comprises
a hot workpiece support configured to receive and support the workpiece transferred thereto from the post-heat station, and
wherein the hot workpiece support is further configured to maintain the second temperature of the workpiece while the workpiece
resides thereon; and

a workpiece transfer arm, wherein the workpiece transfer arm is configured to concurrently transfer two or more workpieces
between two or more of the chuck, load lock chamber, chilled workpiece holding station, heated workpiece holding station,
pre-chill station, and post-heat station.

US Pat. No. 9,805,912

HYDROGEN COGAS FOR CARBON IMPLANT

Axcelis Technologies, Inc...

1. A method of increasing a lifetime of an ion source in an ion implantation system configured to produce an ion beam for
implanting carbon ions, the method comprising:
introducing a gaseous substance into an ion source chamber of the ion implantation system at a first flow rate, the gaseous
substance including a carbon-containing species;

introducing an amount of a hydrogen co-gas into the ion source chamber of the ion implantation system at a second flow rate;
exciting the carbon-containing gaseous species within the ion source chamber to create a plasma of disassociated and ionized
carbon and oxygen constituents;

reacting the disassociated and ionized oxygen constituents of the carbon-containing gaseous species with the hydrogen co-gas,
wherein the hydrogen co-gas reacts with oxygen to produce water or hydroxide, therein reducing poisoning of the ion source
chamber and increasing ion source lifetime; and

removing the water or hydroxide from the ion source chamber by a vacuum pump system, wherein the first flow rate and the second
flow rate are selectively varied so that a maximum amount of oxygen constituents are removed without deleteriously affecting
a current of the ion beam.

US Pat. No. 10,227,693

OUTGASSING IMPACT ON PROCESS CHAMBER REDUCTION VIA CHAMBER PUMP AND PURGE

Axcelis Technologies, Inc...

1. A workpiece processing system, comprising:a process chamber for processing a workpiece, the process chamber having a process environment associated therewith;
an outgassing chamber operably coupled to the process chamber, wherein the outgassing chamber comprises an outgassing chamber valve configured to selectively isolate the processing environment from an outgassing environment defined within the outgassing chamber, and wherein the outgassing chamber comprises a first workpiece support configured to selectively support the workpiece within the outgassing environment;
a heater associated with the outgassing chamber, wherein the heater is configured to selectively heat the workpiece to a first predetermined temperature;
a vacuum source in selective fluid communication with the outgassing chamber, wherein the vacuum source is configured to selectively depressurize the outgassing chamber to a first predetermined pressure;
a workpiece transfer apparatus configured to selectively transfer the workpiece between the outgassing chamber and the process chamber; and
a controller configured to isolate the workpiece in the outgassing chamber via a control of the outgassing chamber valve when the workpiece resides in the outgassing chamber, wherein the controller is further configured to concurrently heat the workpiece to the first predetermined temperature via a control of the heater and to depressurize the outgassing chamber to the first predetermined pressure via a control of the vacuum source, wherein the controller is further configured to maintain the workpiece at approximately the first predetermined temperature and approximately the first predetermined pressure for a first period of time associated with a predetermined outgassing threshold.

US Pat. No. 9,711,328

METHOD OF MEASURING VERTICAL BEAM PROFILE IN AN ION IMPLANTATION SYSTEM HAVING A VERTICAL BEAM ANGLE DEVICE

Axcelis Technologies, Inc...

1. A measurement system for an ion implantation system, the measurement system comprising:
a scan arm configured to rotate about an axis;
a workpiece support in linear sliding engagement with the scan arm, wherein the workpiece support is configured to translate
a workpiece through a path of an ion beam along an implantation plane;

a first measurement component comprising a first faraday cup positioned downstream of the scan arm along the path of the ion
beam, wherein the first faraday cup is configured to provide a first signal associated with ion radiation from the ion beam
incident thereto;

a second measurement component comprising a second faraday cup operably coupled to the scan arm and a mask, wherein the second
faraday cup is configured to provide a second signal associated with ion radiation from the ion beam incident thereto concurrent
with a rotation of the scan arm about the axis, and wherein the mask is positioned upstream of the second faraday cup, wherein
the mask is generally fixed with respect to the second faraday cup and has a plurality of slits defined therein, and wherein
the mask is configured to permit varying amounts of the ion radiation from the ion beam to pass therethrough to the second
faraday cup based on a relative angular orientation between the mask and the ion beam, wherein the mask further comprises
a blocking plate positioned at one or more outboard locations of the mask, and wherein the blocking plate is configured to
selectively block the ion radiation from the ion beam incident to the first faraday based on the rotation of the scan arm
about the axis; and

a controller configured to determine an angle of the ion beam and a vertical size of the ion beam with respect to the implantation
plane, wherein the determination is based, at least in part, on one or more of the first signal, second signal, and the relative
orientation between the mask and the ion beam as the second measurement component rotates about the axis.

US Pat. No. 9,543,110

REDUCED TRACE METALS CONTAMINATION ION SOURCE FOR AN ION IMPLANTATION SYSTEM

AXCELIS TECHNOLOGIES, INC...

1. An ion source chamber for an ion implantation system, the ion source chamber comprising:
a housing that at least partially bounds an ionization region through which high energy electrons move from a cathode to ionize
gas molecules injected into an interior of the housing;

a liner section defining one or more interior walls of the housing interior, wherein each liner section includes an interiorly
facing surface exposed to the ionization region during operation of the ion implantation system;

a cathode shield disposed about the cathode, wherein the cathode is free of contact with the liner section and comprises an
end cap;

a repeller spaced apart from the cathode;
a plate comprising a source aperture for discharging ions from the ion source chamber;
wherein the cathode end cap, or the cathode shield, or an insert in the plate defining the source aperture comprise silicon
carbide having a monolithic structure, wherein the silicon carbide is a non-stoichiometric sintered material of the formula
SiCx, wherein x is from 1.1 to 1.45.

US Pat. No. 9,978,555

ION SOURCE LINER HAVING A LIP FOR ION IMPLANTATION SYSTEMS

Axcelis Technologies, Inc...

1. An ion source liner, comprising:a plate having an exposure surface configured to be exposed to, and at least partially confine, a plasma generated within an ion source, wherein the exposure surface is defined by a first surface, wherein the plate comprises a hole through the first surface, and wherein the hole is configured to pass an electrode therethrough, leaving an annular gap between the electrode and the hole, and wherein the plate further comprises a lip that surrounds the hole and extends outward from the first surface.

US Pat. No. 9,871,473

SYSTEM AND METHOD FOR ELECTROSTATIC CLAMPING OF WORKPIECES

Axcelis Technologies, Inc...

17. A method for clamping a workpiece to an electrostatic clamp, the method comprising:
applying a clamping voltage to the electrostatic clamp based on a first desired clamping condition, wherein the clamping voltage
has a clamping frequency associated therewith, therein clamping a workpiece to the electrostatic clamp with a first clamping
force, wherein applying the clamping voltage to the electrostatic clamp comprises applying a first AC voltage at a first frequency
to the electrostatic clamp; and

modifying the clamping voltage and clamping frequency, based, at least in part, on a second desired clamping condition associated
with a second clamping force between the workpiece and the electrostatic clamp, wherein the second clamping force is non-zero
and is associated with a removal of the workpiece from the electrostatic clamp, and wherein modifying the clamping voltage
and clamping frequency comprises applying a second AC voltage at a second frequency to the electrostatic clamp, wherein the
first AC voltage is approximately an order of magnitude greater than the second AC voltage, and wherein the first frequency
is approximately an order of magnitude less than the second frequency.

US Pat. No. 9,558,980

VAPOR COMPRESSION REFRIGERATION CHUCK FOR ION IMPLANTERS

AXCELIS TECHNOLOGIES, INC...

1. An ion implantation system comprising:
a beamline assembly configured to steer an ion beam from an ion source towards an electrostatic chuck, wherein the electrostatic
chuck includes an engagement region adapted to selectively retain a workpiece for implantation by the ion beam;

a compressor configured to receive vapor-phase refrigerant fluid from the electrostatic chuck and compress the vapor-phase
refrigerant fluid to provide a compressed refrigerant fluid;

a condenser configured to condense the compressed refrigerant fluid to provide a condensed refrigerant fluid; and
a supply conduit to transport the condensed refrigerant fluid from the condenser to the electrostatic chuck, wherein the electrostatic
chuck includes a cavity or recess to expand and vaporize the condensed refrigerant fluid to cool the engagement region of
the electrostatic chuck, and wherein the cavity or recess comprises:

a flow restrictor which is defined in a body of the electrostatic chuck; and
a cooling channel which is disposed in the body of the electrostatic chuck and which is downstream of the flow restrictor,
wherein the flow restrictor comprises:

first and second distal flow restrictor regions having respective sidewalls separated by a first flow restrictor width, wherein
the first distal flow restrictor region is proximate to the supply conduit and the second distal flow restrictor region is
proximate to the cooling channel; and

a central flow restrictor region separating the first and second distal flow restrictor regions and having sidewalls separated
by a second flow restrictor width that is greater than the first flow restrictor width.

US Pat. No. 9,558,914

BIPOLAR WAFER CHARGE MONITOR SYSTEM AND ION IMPLANTATION SYSTEM COMPRISING SAME

AXCELIS TECHNOLOGIES, INC...

1. A charge monitor for an ion implantation system, the charge monitor comprising:
a Langmuir probe;
a positive charge rectifier operably coupled to the Langmuir probe and configured to pass only a positive charge therethrough;
a positive current integrator operably coupled to the positive charge rectifier, wherein the positive current integrator is
biased via a positive threshold voltage, and wherein the positive current integrator is configured to output a positive dosage
based, at least in part, on the positive threshold voltage;

a positive charge counter configured to receive the output from the positive current integrator and to provide a cumulative
positive charge value associated with the positive charge;

a negative charge rectifier operably coupled to the Langmuir probe and configured to pass only a negative charge therethrough;
a negative current integrator operably coupled to the negative charge rectifier, wherein the negative current integrator is
biased via a negative threshold voltage, and wherein the negative current integrator is configured to output a negative dosage
based, at least in part, on the negative threshold voltage; and

a negative charge counter configured to receive the output from the negative current integrator and to provide a cumulative
negative charge value associated with the negative charge.

US Pat. No. 10,024,825

WAFER CLAMP DETECTION BASED ON VIBRATION OR ACOUSTIC CHARACTERISTIC ANALYSIS

Axcelis Technologies, Inc...

1. A workpiece clamping status detection system, comprising:a clamping device having a clamping surface, wherein the clamping device is configured to selectively clamp a workpiece to the clamping surface;
a vibration-inducing mechanism that is not in physical contact with the clamping device, wherein the vibration-inducing mechanism is configured to selectively vibrate one or more of the clamping device and workpiece via an emission of sound waves from the vibration-inducing mechanism;
a vibration-sensing mechanism that is not in physical contact with the clamping device, wherein the vibration-sensing mechanism is configured to detect the vibration of the one or more of the clamping device and workpiece; and
a controller configured to determine a clamping state associated with the clamping of the workpiece to the clamping surface, wherein the clamping state is associated with the detected vibration of the one or more of the clamping device and workpiece.

US Pat. No. 9,847,240

CONSTANT MASS FLOW MULTI-LEVEL COOLANT PATH ELECTROSTATIC CHUCK

Axcelis Technologies, Inc...

1. A workpiece support, comprising:
a vessel comprising a top interior wall and a bottom interior wall, wherein the top interior wall is disposed opposite the
bottom interior wall, therein defining an interior cavity between the top interior wall and bottom interior wall, wherein
the vessel further comprises a support surface configured to support a workpiece thereon;

a plate positioned within the interior cavity, wherein the plate divides the interior cavity into a top cavity defined between
the plate and the top interior wall and a bottom cavity defined between the plate and the bottom interior wall, and wherein
the top cavity and bottom cavity are fluidly coupled to one another about a periphery of the plate;

a first taper defined in one or more of the top interior wall and a top portion of the plate, wherein a first height between
the top portion of the plate and the top interior wall decreases as a function of a radius from a center of the interior cavity
toward the periphery of the plate;

a second taper defined in one or more of the bottom interior wall and a bottom portion of the plate, wherein a second height
between the bottom portion of the plate and the bottom interior wall decreases as a function of the radius from the center
of the interior cavity toward the periphery of the plate;

a first port defined in a central portion of the plate, wherein the first port fluidly couples the top cavity to a first fluid
channel; and

a second port defined in bottom portion of the vessel, wherein the second port fluidly couples the bottom cavity to a second
fluid channel.

US Pat. No. 9,842,752

OPTICAL HEAT SOURCE WITH RESTRICTED WAVELENGTHS FOR PROCESS HEATING

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
a process chamber;
an ion implantation apparatus configured to provide a beam of ions to a workpiece positioned in the process chamber;
an optical heat source configured to selectively emit light wavelengths with a predetermined range of selected wavelengths;
and

an internally reflective optical guide coupled to the optical heat source for directing the light wavelengths in a direction
toward the workpiece to heat the workpiece.

US Pat. No. 9,611,540

ELECTROSTATIC CHUCK SHIELDING MECHANISM

AXCELIS TECHNOLOGIES, INC...

1. An end station for an ion implantation system, the end station comprising:
a process chamber configured to receive an ion beam;
an electrostatic chuck configured to selectively translate a workpiece through the ion beam;
a shield, wherein the shield is configured to selectively overlie at least a portion of a clamping surface of the electrostatic
chuck, therein selectively protecting the at least a portion of the clamping surface from one or more contaminants associated
with the ion beam; and

a docking station positioned within the process chamber, wherein the docking station is configured to selectively support
the shield within the process chamber during the translation of the workpiece through the ion beam.

US Pat. No. 9,984,855

IMPLEMENTATION OF CO-GASES FOR GERMANIUM AND BORON ION IMPLANTS

Axcelis Technologies, Inc...

1. An ion implantation system for improving performance and extending lifetime of an ion source in an ion implanter comprising:an ion source assembly comprising a dopant gas controller, a co-gas controller, and an ion source chamber, the dopant gas controller operatively controlling the rate and flow of a fluorine-containing dopant gas source into the ion source chamber, and the co-gas controller operatively controlling the rate and flow of a co-gas into the ion source chamber, wherein the dopant gas controller and the co-gas controller are configured to operatively control a combined rate and flow of the fluorine-containing dopant gas and the co-gas to limit a pressure within the ion source chamber, and wherein the co-gas controller is further configured to adjust the rate and flow of the co-gas into the ion source chamber during operation of the ion implantation system to achieve a maximum beam current of an ion beam formed therein, wherein the co-gas controller is configured to incrementally increase the flow of the co-gas into the ion source chamber until the beam current begins to decrease, thereby establishing a threshold co-gas flow, and to further validate the beam current based on a mass spectral analysis performed on the ion beam and a comparison of a measured reduction in an undesired gas associated with the fluorine-containing dopant gas and a measured increase in a resultant gas formed after a reaction of the fluorine-containing dopant gas with the co-gas;
a beam line assembly that receives the ion beam from the ion source and processes the ion beam; and
a target location that receives the ion beam from the beam line assembly.

US Pat. No. 9,911,636

MULTIPLE DIAMETER IN-VACUUM WAFER HANDLING

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
an ion implantation apparatus configured to provide a plurality of ions to a process chamber;
a chuck configured to selectively support one of a first workpiece and a second workpiece within the process chamber during
an exposure of the respective first workpiece and second workpiece to the plurality of ions, wherein the second workpiece
has a diameter that is greater than a diameter of the first workpiece;

a load lock chamber operably coupled to the process chamber, wherein the load lock chamber comprises a workpiece support configured
to support the respective one of the first workpiece and second workpiece during a transfer of the respective one of the first
workpiece and second workpiece between the process chamber and an external environment; and

a robot configured to transfer the respective one of the first workpiece and second workpiece between the chuck and the workpiece
support via a first gripper mechanism, wherein the first gripper mechanism comprises:

a plurality of gripper arms configured to translate between a grip position and a release position; and
a plurality of guides operably coupled to the plurality of gripper arms, wherein the plurality of guides have a first gripping
portion associated with the diameter of the first workpiece and a second gripping portion associated with the diameter of
the second workpiece, and wherein when the plurality of gripper arms are in the grip position, the first gripping portion
of the plurality of guides is configured to selectively grip the first workpiece therebetween and the second gripping portion
of the plurality of guides is configured to selectively grip the second workpiece therebetween, and wherein the first gripping
portion and second gripping portion of the plurality of guides are configured to selectively release the respective first
workpiece and second workpiece when the plurality of gripper arms are in the release position.

US Pat. No. 9,870,893

MULTI-PIECE ELECTRODE APERTURE

Axcelis Technologies, Inc...

1. An optics plate for an ion implantation system, the optics plate comprising:
a pair of aperture assemblies, each pair of aperture assemblies respectively comprising:
a first aperture member;
a second aperture member; and
an aperture fastener, wherein the aperture fastener selectively couples the first aperture member to the second aperture member.

US Pat. No. 9,711,324

INERT ATMOSPHERIC PRESSURE PRE-CHILL AND POST-HEAT

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:
a process chamber having a process environment associated therewith;
an ion implantation apparatus configured to provide a plurality of ions to a workpiece positioned in the process chamber;
a sub-ambient temperature chuck configured to support the workpiece within the process chamber during an exposure of the workpiece
to the plurality of ions, wherein the sub-ambient temperature chuck is further configured to cool the workpiece to a processing
temperature;

an intermediate chamber having an intermediate environment associated therewith, wherein the intermediate chamber is in fluid
communication with an external environment, and wherein the intermediate chamber comprises a cooling station configured to
cool the workpiece to a first temperature and a heating station configured to heat the workpiece to a second temperature;

a load lock chamber operably coupled to the process chamber and the intermediate chamber, wherein the load lock chamber is
configured to isolate the process environment from the intermediate environment, and wherein the load lock chamber comprises
a workpiece support configured to support the workpiece during a transfer of the workpiece between the process chamber and
the intermediate chamber; and

a positive pressure source configured to provide a dry gas to the intermediate chamber at an intermediate pressure that is
greater than atmospheric pressure, wherein the dry gas has a dew point that is less than a dew point of the external environment,
and wherein the positive pressure source generally isolates the intermediate environment from the external environment via
a flow of the dry gas from the intermediate chamber to the external environment.

US Pat. No. 9,620,327

COMBINED MULTIPOLE MAGNET AND DIPOLE SCANNING MAGNET

Axcelis Technologies, Inc...

1. A combined scanning and focusing magnet, comprising:
a yoke having a high magnetic permeability, the yoke defining a hole configured to pass an ion beam therethrough;
one or more scanner coils operably coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic
field when electrically coupled to a power supply;

one or more focusing coils operably coupled to the yoke and configured to generate a predominantly multipole magnetic field,
wherein the predominantly multipole magnetic field is one of static or time-varying, wherein leads of the focusing magnet
coil leads are positioned to eliminate a mutual inductance between the focusing magnet and the scanning magnet; and

an adjustable auxiliary yoke, wherein one or more auxiliary coils are wrapped around the auxiliary yoke, wherein the one or
more auxiliary coils are positioned in a fringe field region associated with the one or more scanner coils, whereby a mutual
inductance between the one or more focusing coils and the one or more scanning coils is generally eliminated.

US Pat. No. 9,607,803

HIGH THROUGHPUT COOLED ION IMPLANTATION SYSTEM AND METHOD

AXCELIS TECHNOLOGIES, INC...

1. An ion implantation system, comprising:
an ion source configured to provide a plurality of ions to a workpiece positioned in a process chamber, wherein the process
chamber has a process environment associated therewith;

a chuck configured to support the workpiece within the process chamber during exposure of the workpiece to the plurality of
ions;

a load lock chamber operably coupled to the process chamber, said load lock chamber being configured to enable transfer of
the workpiece to and from an atmospheric environment and the process environment, said load lock chamber including a load
lock workpiece support configured to support the workpiece during the transfer of the workpiece;

an isolation chamber operably coupled to the process chamber and having a pre-implant cooling environment defined therein,
wherein the isolation chamber comprises an isolation gate valve configured to selectively isolate the pre-implant cooling
environment from the process environment and to selectively permit access of the workpiece to the pre-implant cooling environment,
wherein the isolation chamber comprises a pre-implant cooling workpiece support configured to support and cool the workpiece
within the pre-implant cooling environment, and wherein the isolation gate valve defines the only access path for the workpiece
to enter and exit the isolation chamber to or from the process chamber;

a pressurized gas source operably coupled to the isolation chamber, wherein the pressurized gas source is configured to selectively
pressurize the pre-implant cooling environment to a pre-implant cooling pressure when the isolation gate valve is closed,
and wherein the pre-implant cooling pressure is greater than a process pressure of the process environment;

a workpiece transfer arm configured to selectively transfer the workpiece between two or more of the load lock chamber, the
isolation chamber, and the process chamber; and

a controller configured to selectively transfer the workpiece between the load lock workpiece support, the pre-implant cooling
workpiece support, and the chuck via a control of the workpiece transfer arm, and wherein the controller is further configured
to selectively cool the workpiece to a pre-implant cooling temperature within the isolation chamber at the pre-implant cooling
pressure via a control of the isolation gate valve, the pre-implant cooling workpiece support, and the pressurized gas source.

US Pat. No. 10,037,877

ION IMPLANTATION SYSTEM HAVING BEAM ANGLE CONTROL IN DRIFT AND DECELERATION MODES

Axcelis Technologies, Inc...

1. An ion implantation system comprising:an ion source configured to form an ion beam;
a mass analyzer configured to selectively separate ions having a predetermined charge-to-mass ratio from the ion beam, therein defining a mass analyzed beam along a beam path, wherein the mass analyzer is configured to selectively vary the beam path;
a moveable mass resolving aperture assembly having a resolving aperture configured to permit selected species of the mass analyzed beam therethrough, and wherein the moveable mass resolving aperture assembly is configured to selectively vary a position of the resolving aperture in response to the selective variation of the beam path by the mass analyzer;
a deflecting deceleration element positioned downstream of the moveable mass resolving aperture assembly and configured to selectively vary the beam path therethrough, wherein the deflecting deceleration element is further configured to selectively decelerate the mass analyzed beam; and
a controller configured to control the ion source, mass analyzer, moveable mass resolving aperture assembly, and deflecting deceleration element to selectively operate the ion implantation system in a drift mode and a decel mode, wherein in the drift mode, the controller is configured to control the beam path so as to pass the mass analyzed beam along a first path through the resolving aperture without deflecting or decelerating the mass analyzed beam via the deflecting deceleration element, and wherein in the decel mode, the controller is configured to control the beam path so as to pass the mass analyzed beam along a second path passing through the resolving aperture and to selectively deflect and decelerate the mass analyzed beam along the second path via the deflecting deceleration element, wherein the second path differs from the first path, and wherein selectively varying the position of the resolving aperture is based on the selective variation of the beam path through the mass analyzer and the deflecting deceleration element.

US Pat. No. 9,978,599

WAFER COOLING APPARATUS AND METHOD

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:an ion implantation apparatus configured to direct an ion beam toward a process chamber;
a first chamber operably coupled to the process chamber;
a heated chuck positioned within the process chamber, wherein the heated chuck is configured to selectively clamp a workpiece to a clamping surface thereof;
a heating apparatus configured to selectively heat the clamping surface of the heated chuck;
a workpiece transfer apparatus configured to transfer the workpiece between the heated chuck and the first chamber; and
a controller configured to selectively transfer the workpiece between the heated chuck and the first chamber via the workpiece transfer apparatus, and wherein the controller is configured to selectively energize the heating apparatus to operate the heated chuck in each of a first mode and a second mode, wherein in the first mode, the heating apparatus heats the clamping surface to a first temperature, and wherein in the second mode, the heating apparatus heats the clamping surface to a second temperature, and wherein the first temperature is predetermined and associated with a high temperature ion implantation, and wherein the second temperature is associated with a quasi-room temperature ion implantation, wherein the controller is configured to determine the second temperature based on one or more of a thermal budget associated with the workpiece, an implant energy associated with the ion beam impacting the workpiece, and an initial temperature of the workpiece when the workpiece resides in the first chamber, wherein the controller is configured to generally maintain the second temperature on the heated chuck in the second mode, and wherein transferring the workpiece from the heated chuck to the first chamber generally removes the implant energy from the process chamber when the heated chuck is operated in the second mode, wherein the first temperature is greater than approximately 300° C. and wherein the second temperature is less than approximately 100° C.

US Pat. No. 9,953,801

TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION

Axcelis Technologies, Inc...

1. An ion implantation system comprising:an ion source that generates an ion beam having a selected species;
a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio and an angle adjustment;
a resolving aperture assembly positioned downstream of the mass analyzer, the resolving aperture assembly comprising:
a first plate and a second plate, wherein the first plate and second plate define a resolving aperture therebetween, wherein a position of the first plate with respect to the second plate defines a width of the resolving aperture; and
one or more actuators operably coupled to one or more of the first plate and second plate, wherein the one or more actuators are configured to selectively vary the position of the respective one or more of the first plate and second plate with respect to one another, therein selectively varying the width of the resolving aperture, and wherein the one or more actuators are further configured to position the first plate with respect to the second plate to selectively close the resolving aperture, therein selectively preventing the ion beam from traveling downstream of the resolving aperture assembly, wherein the one or more actuators comprise a servo motor and a pneumatic cylinder operably coupled to one or more of the first plate and second plate, wherein the servo motor is configured to vary the width of the resolving aperture, and wherein the pneumatic cylinder is configured to selectively close the resolving aperture; and
a controller configured to control the width of the resolving aperture via a control of the one or more actuators, wherein the control of the width of the resolving aperture is based, at least in part, on one or more desired properties of the ion beam.

US Pat. No. 10,128,084

WAFER TEMPERATURE CONTROL WITH CONSIDERATION TO BEAM POWER INPUT

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:an ion source configured to form an ion beam;
a beamline assembly configured to mass analyze the ion beam;
an end station for receiving the ion beam, wherein the end station comprises a heated chuck configured to selectively secure and selectively heat a workpiece during an implantation of ions into the workpiece from the ion beam; and
a controller configured to maintain a desired temperature of the workpiece during the implantation of ions into the workpiece, wherein the controller is configured to selectively heat the workpiece via a control of the heated chuck based, at least in part, on a predetermined characterization of the ion implantation system and a thermal energy imparted into the workpiece from the ion beam during the implantation.

US Pat. No. 10,342,114

RF RESONATOR FOR ION BEAM ACCELERATION

Axcelis Technologies, Inc...

1. An RF feedthrough for an ion implantation system, the RF feedthrough comprising:an electrically insulative cone having a first cone end and a second cone end, wherein the electrically insulative cone is generally hollow and has a first opening at the first cone end and a second opening at the second cone end, wherein the first opening has a first diameter associated therewith and the second opening has a second diameter associated therewith, and wherein the first diameter is larger than the second diameter, therein generally defining a tapered sidewall of the electrically insulative cone;
a stem operably coupled to the second cone end of the electrically insulative cone, wherein the stem passes through the first opening and second opening of the electrically insulative cone; and
a flange operably coupled to the first cone end of the electrically insulative cone, wherein the flange has a flange opening defined therein, wherein the flange opening has a third diameter associated therewith, wherein the third diameter is smaller than the first diameter, and wherein the stem passes through the flange opening without contacting the flange, and wherein the flange is configured to operably couple the electrically insulative cone to a hole defined in a wall of a chamber, wherein the electrically insulative cone and flange are configured to pass the stem through the hole in the wall of the chamber while electrically insulating the stem from the wall of the chamber.

US Pat. No. 10,256,069

PHOSPHOROUS TRIFLUORIDE CO-GAS FOR CARBON IMPLANTS

AXCELIS TECHNOLOGIES, INC...

1. A process for implanting carbon into a substrate, the process comprising:ionizing a carbon oxide gas source and a co-gas comprising phosphorous trifluoride in an ion source chamber to produce carbon ions and phosphorous oxide;
detecting formation of phosphorous oxides based on analysis of atomic mass unit spectra;
determining a final ratio between the carbon oxide gas source and the co-gas comparing the phosphorous trifluoride when the phosphorous oxides are no longer detectable; and
implanting the carbon ions into the substrate.

US Pat. No. 10,170,286

IN-SITU CLEANING USING HYDROGEN PEROXIDE AS CO-GAS TO PRIMARY DOPANT OR PURGE GAS FOR MINIMIZING CARBON DEPOSITS IN AN ION SOURCE

Axcelis Technologies, Inc...

1. An ion source assembly for improving ion implantation performance, the ion source assembly comprising:an ion source chamber;
a source gas supply configured to provide a molecular carbon source gas to the ion source chamber;
a source gas flow controller configured to control a flow of the molecular carbon source gas to the ion source chamber during periods of ion implantation;
an excitation source configured to excite the molecular carbon source gas, therein forming carbon ions and residual carbon;
an extraction electrode configured to extract the carbon ions from the ion source chamber, therein forming an ion beam;
a hydrogen peroxide co-gas supply configured to provide a predetermined concentration of hydrogen peroxide gas to the ion source chamber;
a hydrogen peroxide co-gas flow controller configured to control a flow of the hydrogen peroxide gas to the ion source chamber as a purge gas during periods of non-implantation, wherein the hydrogen peroxide gas decomposes within the ion source chamber and reacts with the residual carbon from the molecular carbon source gas in the ion source chamber, therein forming hydrocarbons within the ion source chamber; and
a vacuum pump system configured to remove the hydrocarbons from the ion source chamber, wherein deposition of the residual carbon within the ion source chamber is reduced and a lifetime of the ion source chamber is increased.

US Pat. No. 10,324,121

CHARGE INTEGRATION BASED ELECTROSTATIC CLAMP HEALTH MONITOR

Axcelis Technologies, Inc...

1. An electrostatic clamp monitoring system, comprising:an electrostatic clamp configured to selectively electrostatically clamp a workpiece to a clamping surface associated therewith via one or more electrodes;
a power supply electrically coupled to the electrostatic clamp, wherein the power supply is configured to selectively supply a clamping voltage to the one or more electrodes of the electrostatic clamp;
a data acquisition system operably coupled to the power supply and configured to measure a current supplied to the one or more electrodes, therein defining a measured current;
a controller configured to integrate the measured current over time, therein determining a charge value associated with a clamping force between the workpiece and electrostatic clamp;
a memory configured to store the charge value associated with the clamping force between the workpiece and electrostatic clamp over a plurality of clamping cycles, therein defining a plurality of charge values, wherein the controller is further configured to determine a clamping capability of the electrostatic clamp based on a comparison of a currently determined charge value to the plurality of charge values, and wherein the controller is configured to predict a future status of the clamping capability of the electrostatic clamp based on the currently determined charge value and the plurality of charge values; and
a display configured to display the clamping capability of the electrostatic clamp.

US Pat. No. 10,403,503

WAFER COOLING SYSTEM AND METHOD

Axcelis Technologies, Inc...

1. An ion implantation system, comprising:an ion implantation apparatus configured to direct an ion beam toward a process chamber;
a first chamber operably coupled to the process chamber;
a heated chuck positioned within the process chamber, wherein the heated chuck is configured to selectively clamp a workpiece to a clamping surface thereof;
a heating apparatus configured to selectively heat the clamping surface of the heated chuck;
a workpiece transfer apparatus configured to transfer the workpiece between the heated chuck and the first chamber; and
a controller configured to selectively transfer the workpiece between the heated chuck and the first chamber via the workpiece transfer apparatus, and wherein the controller is configured to selectively energize the heating apparatus to operate the heated chuck in each of a first mode and a second mode, wherein in the first mode, the heating apparatus heats the clamping surface to a first temperature, and wherein in the second mode, the heating apparatus heats the clamping surface to a second temperature, and wherein the first temperature is predetermined and associated with a high temperature ion implantation, and wherein the second temperature is associated with a quasi-room temperature ion implantation, wherein the controller is configured to determine the second temperature based on one or more of a thermal budget associated with the workpiece, an implant energy associated with the ion beam impacting the workpiece, and an initial temperature of the workpiece when the workpiece resides in the first chamber, wherein the controller is configured to generally maintain the second temperature on the heated chuck in the second mode, and wherein transferring the workpiece from the heated chuck to the first chamber generally removes the implant energy from the process chamber when the heated chuck is operated in the second mode.

US Pat. No. 10,395,889

IN SITU BEAM CURRENT MONITORING AND CONTROL IN SCANNED ION IMPLANTATION SYSTEMS

Axcelis Technologies, Inc...

1. A method for controlling ion beam uniformity in an ion implantation system, the method comprising:generating an ion beam;
transporting the ion beam toward a workpiece;
scanning the ion beam in first and second scan directions along a first axis to generate a scanned ion beam in response to a scan current waveform;
providing at least one beam optical element configured to selectively steer and/or shape the ion beam as it is transported toward the workpiece;
sampling the scanned ion beam for providing a plurality of ion beam current samples as the ion beam is scanned;
synchronizing the ion beam current samples with the scan current waveform to provide position and scan direction information corresponding to the scanned ion beam for producing a time, position and scan direction dependent beam current waveform;
analyzing the plurality of ion beam current samples to detect nonunifomity therein; and
generating a control signal in response to the analyzing step.

US Pat. No. 10,395,891

TWO-AXIS VARIABLE WIDTH MASS RESOLVING APERTURE WITH FAST ACTING SHUTTER MOTION

Axcelis Technologies, Inc...

1. An ion implantation system comprising:an ion source that generates an ion beam having a selected species;
a mass analyzer positioned downstream of the ion source that generates a magnetic field according to a selected charge-to-mass ratio and an angle adjustment;
a resolving aperture assembly positioned downstream of the mass analyzer, the resolving aperture assembly comprising:
a first plate and a second plate, wherein the first plate and second plate define a resolving aperture therebetween, wherein a position of the first plate with respect to the second plate defines a width of the resolving aperture; and
one or more actuators operably coupled to one or more of the first plate and second plate, wherein the one or more actuators are configured to selectively vary the position the respective one or more of the first plate and second plate with respect to one another, therein selectively varying the width of the resolving aperture, wherein the one or more actuators comprise a servo motor and a pneumatic cylinder operably coupled to one or more of the first plate and second plate; and
a controller configured to control the width of the resolving aperture via a control of the one or more actuators, wherein the control of the width of the resolving aperture is based, at least in part, on one or more desired properties of the ion beam.