US Pat. No. 9,445,510

GALVANIC PROCESS FOR FILLING THROUGH-HOLES WITH METALS, IN PARTICULAR OF PRINTED CIRCUIT BOARDS WITH COPPER

Atotech Deutschland GmbH,...

1. Galvanic process for filling through-holes of a workpiece with metals comprising the following steps:
(i) bringing in contact the workpiece containing through-holes with a first metal deposition electrolyte and applying a voltage
between the workpiece and at least one anode so that a current flow is supplied to the workpiece, wherein the current flow
is chosen such that a deposition occurs in the center of the through-holes and, consequently, the through-holes grow together,
until the through-holes are divided into two halves forming two holes which are each closed at one end close to the through-hole
center, one hole on each side of the workpiece;

(ii) further bringing in contact the workpiece with a second metal-deposition electrolyte and applying a voltage between the
workpiece and at least one anode so that a current flow is supplied to the workpiece, wherein the through-holes obtained in
step (i) which are divided into two halves are filled by the metal,

wherein the current flow in accordance with step (i) is a pulse reverse current and in every cycle of the current at least
one forward current pulse and at least one reverse current pulse occurs and that the current flow in accordance with step
(ii) is either a pulse reverse current, a direct current or an alternating current, and

wherein, in the pulse reverse current of step (i) and in the pulse reverse current of step (ii) when present, the ratio of
the duration of the at least one forward current pulse to the duration of the at least one reverse current pulse is adjusted
to 5-75,

wherein the electrolyte comprises a wetting agent, and
wherein the through-holes have a diameter of 30 ?m-300 ?m and a maximum height of 0.025-1 mm.

US Pat. No. 9,051,643

PROCESS FOR METALLIZING NONCONDUCTIVE PLASTIC SURFACES

Atotech Deutschland GmbH,...

1. Process for metallizing electrically nonconductive plastic surfaces of articles, comprising the process steps of:
A) treating the plastic surface with etching solutions to etch the plastic surface, wherein process step A) comprises the
following steps, in any order:

treating the plastic surface with an acidic etching solution, and
treating the plastic surface with an alkaline etching solution;
B) treating the etched plastic surface with a solution of a colloid or of a compound of a metal to activate the plastic surface;
and

C) metallizing the activated plastic surface with a metallizing solution;
wherein each of the etching solutions comprise a source for permanganate ions.

US Pat. No. 9,504,161

SOLUTION AND PROCESS FOR THE PRE-TREATMENT OF COPPER SURFACES USING AN N-ALKOXYLATED ADHESION-PROMOTING COMPOUND

ATOTECH DEUTSCHLAND GMBH,...

1. A solution, comprising:
a) hydrogen peroxide;
b) an acid;
c) a nitrogen-containing, five-membered, heterocyclic compound; and
d) a lactam or a polyamide, which is connected at one or more of its nitrogen atoms with at least one residue of formula (I):

wherein:
n is an integer from 1 to 100;
R1 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms;

R2 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; and

each R1 and R2 in a —(CHR1—CHR2—O)— moiety is selected independently of each R1 and R2 in another —(CHR1—CHR2—O)— moiety;

with the proviso that the compound of c) is not connected at any of its nitrogen atoms with a residue of formula (I).

US Pat. No. 9,263,609

METAL PLATING COMPOSITION AND METHOD FOR THE DEPOSITION OF COPPER—ZINC—TIN SUITABLE FOR MANUFACTURING THIN FILM SOLAR CELL

Atotech Deutschland GmbH,...

1. A metal plating composition for the deposition of a copper-zinc-tin alloy, said alloy additionally containing at least
one chalcogen, the metal plating composition comprising at least one copper plating species, at least one zinc plating species,
at least one tin plating species, at least one complexing agent and at least one chalcogen plating species,
wherein the metal plating composition additionally comprises at least one additive, selected from the group consisting of
disubstituted benzene compounds having general chemical formula I:


wherein R1 and R2 are the same or different, are selected independently from the group consisting of OH, SH, NR3R4, CO—R5, COOR5, CONR3R4, COSR5, SO2OR5, SO2R5, SO2NR3R4 and the salts thereof or have the aforementioned meanings and form a common condensation chain;

with R3 and R4 being the same or different, being selected independently from the group consisting of H and alkyl; and

with R5 being selected from the group consisting of H, alkyl and hydroxyalkyl, and wherein the metal plating composition has a pH
in the range of greater than 10.5 to about 12.

US Pat. No. 9,526,183

GALVANIC PROCESS FOR FILLING THROUGH-HOLES WITH METALS, IN PARTICULAR OF PRINTED CIRCUIT BOARDS WITH COPPER

Atotech Deutschland GmbH,...

1. Galvanic process for filling through-holes of a workpiece with metals comprising the following steps:
(i) bringing in contact the workpiece containing through-holes with a metal-deposition electrolyte and applying a voltage
between the workpiece and at least one anode so that a current flow is supplied to the workpiece, wherein the current flow
is chosen such that a deposition occurs in the center of the through-holes and, consequently, the through-holes completely
or almost completely grow together;

(ii) further bringing in contact the workpiece with a metal-deposition electrolyte and applying a voltage between the workpiece
and at least one anode so that a current flow is supplied to the workpiece, wherein the through-holes obtained in step (i),
which are divided into to halves are filled by the metal,

wherein the current flow in accordance with step (i) is a pulse reverse current and in every cycle of the current at least
one forward current pulse and at least one reverse current pulse occurs and that the current flow in accordance with step
(ii) is either a pulse reverse current, a direct current or an alternating current, and wherein the ratio of the duration
of the at least one forward current pulse to the duration of the at least one reverse current pulse is adjusted to 5-75.

US Pat. No. 9,057,141

IMMERSION TIN OR TIN ALLOY PLATING BATH WITH IMPROVED REMOVAL OF CUPROUS IONS

Atotech Deutschland GmbH,...

1. An aqueous immersion tin or tin alloy plating bath comprising
(i) Sn(II) ions,
(ii) optionally ions of an alloying metal,
(iii) at least one aromatic sulfonic acid or salt thereof,
(iv) at least one complexant selected from the group consisting of thiourea and derivatives thereof and
(v) a mixture of at least one first precipitation additive and at least one second precipitation additive,
wherein the at least one first precipitation additive is selected from the group consisting of aliphatic poly-alcohol compounds,
ethers thereof and polymers derived thereof having an average molecular weight in the range of 62 g/mol and 600 g/mol and

wherein the at least one second precipitation additive is selected from the group consisting of polyalkylene glycol compounds
having an average molecular weight in the range of 750 to 10,000 g/mol.

US Pat. No. 10,448,515

METHOD FOR REDUCING THE OPTICAL REFLECTIVITY OF A COPPER AND COPPER ALLOY CIRCUITRY AND TOUCH SCREEN DEVICE

Atotech Deutschland GmbH,...

1. A method for reducing the optical reflectivity of a copper or copper alloy circuitry by depositing thereon a metal layer of palladium or palladium alloy comprising, in this order, the steps of(i) providing a dielectric substrate,
(ii) depositing copper or a copper alloy onto said dielectric substrate with the proviso that said dielectric substrate comprises a plating base when copper or a copper alloy is deposited by electroless (autocatalytic) plating or electroplating, and
(iii) depositing a palladium or palladium alloy layer onto said copper or copper alloy by immersion-type plating and thereby reducing the optical reflectivity of said copper or copper alloy,
wherein the palladium or palladium alloy is deposited in step (iii) from an aqueous plating bath comprising a source for palladium ions, an acid and at least one phosphonate compound, and
wherein by the immersion-type plating the palladium ions are reduced by metallic copper of the deposited copper or copper alloy,
and wherein the copper or copper alloy deposited in step (ii) is structured to form a circuitry either before step (iii) or after step (iii).

US Pat. No. 9,175,399

PLATING BATH FOR ELECTROLESS DEPOSITION OF NICKEL LAYERS

Atotech Deutschland GmbH,...

1. An aqueous plating bath composition for electroless deposition of nickel and nickel alloys, the plating bath comprising
(i) a source of nickel ions,
(ii) at least one complexing agent,
(iii) at least one reducing agent, and
(iv) a stabilising agent according to formula (1):

wherein X is selected from the group consisting of O and NR4, n ranges from 1 to 6, m ranges from 1 to 8; R1, R2, R3 and R4 are independently selected from the group consisting of hydrogen and C1 to C4 alkyl; Y is selected from the group consisting of —SO3R5, —CO2R5 and —PO3R52, and R5 is selected from the group consisting of hydrogen, C1-C4 alkyl and a suitable counter ion wherein the concentration of the
stabilizing agent according to formula (1) ranges from 0.02 to 5.0 mmol/l.

US Pat. No. 9,222,192

HOLDING DEVICE FOR A PRODUCT AND TREATMENT METHOD

Atotech Deutschland GmbH,...

1. Holding device for a galvanic treatment of both sides of a product, wherein the holding device comprises:
a first holding part having at least one first electrical contact element for establishing a contact with a first side of
the product, and

a second holding part having at least one second electrical contact element for establishing a contact with a second side
of the product, which second side lies opposite the first side,

wherein the first holding part and the second holding part are arranged in such a way that they can be fastened to one another
in a detachable manner for the purpose of holding the product,

wherein a product seal and a housing seal in a treatment state provide a sealing arrangement to prevent the penetration of
fluid into the at least one first electrical contact element and the at least one second electrical contact element,

wherein the product seal comprises a first sealing lip that is attached to the first holding part and a second sealing lip
that is attached to the second holding part, and wherein the at least one first electrical contact element and the at least
one second electrical contact element are arranged between the product seal and the housing seal, and

wherein the first holding part and the second holding part each comprise a middle opening such that the first side and the
second side of the product are galvanically treated simultaneously.

US Pat. No. 9,331,040

MANUFACTURE OF COATED COPPER PILLARS

Atotech Deutschland GmbH,...

1. A method for manufacture of coated copper pillars on a semiconducting substrate comprising, in this order, the steps of
a. providing a semiconducting substrate with an array of copper pillars, the copper pillars having an underbump metallization
area comprising a metal or metal alloy less noble than copper, and a solder cap layer attached to the top portion of the copper
pillars,

b. depositing a first metal layer comprising a metal which is more noble than copper onto the entire outer surface of the
copper pillars, and

c. depositing a second metal layer selected from the group consisting of tin, tin alloys, silver, and silver alloys by immersion-type
plating onto the first metal layer,

wherein the metal which is more noble than copper is selected from the group consisting of silver, palladium, platinum, rhodium,
ruthenium, gold and alloys thereof with the proviso that silver and silver alloys are not selected as first metal layer if
the second metal layer comprises silver or a silver alloy.

US Pat. No. 9,089,062

METHOD FOR ELECTROLESS NICKEL-PHOSPHOROUS ALLOY DEPOSITION ONTO FLEXIBLE SUBSTRATES

Atotech Deutschland GmbH,...

1. A method for electroless deposition of a bendable nickel-phosphorous alloy layer onto a flexible substrate, comprising,
in this order, the steps
i. providing a flexible substrate having attached to at least one side a copper circuitry,
ii. contacting the flexible substrate with an aqueous plating bath comprising
1. nickel ions,
2. hypophosphite ions,
3. at least one complexing agent and
4. a grain refining additive selected from the group consisting of formaldehyde and formaldehyde precursors,wherein the contacting deposits the bendable nickel-phosphorous alloy layer onto the copper circuitry attached to at least
one side of the flexible substrate.

US Pat. No. 9,394,622

DEVICE AND METHOD FOR THE TREATMENT OF FLAT MATERIAL TO BE TREATED

Atotech Deutschland GmbH,...

1. A device (1) for the chemical or electrolytic treatment of flat material to be treated (B) with a treatment liquid (F), having
at least one treatment chamber (20), in which the treatment liquid (F) can be accumulated up to a bath level (M);

at least one supply device (7) for the supply of treatment liquid (F) into the at least one treatment chamber (20);

at least one transport device (30) position in a transport configured to transport the flat material in a horizontal plane (E) below the bath level (M) through
the at least one treatment chamber (20) while the treatment liquid (F) is accumulated in the at least one treatment chamber up to the bath level (M);

at least one reception area (4) for the treatment liquid (F); and

at least one discharge device (40) with, respectively, at least one discharge opening (41) for the treatment liquid (F) for conveying the treatment liquid (F) from the at least one treatment chamber (20) with a respective discharge rate into the at least one reception area (4);

wherein the at least one discharge device (40) respectively has at least one regulating system (43), with which the discharge rate of the treatment liquid (F) through the at least one discharge opening (41) is adjustable,

wherein at least one screen device (60), respectively, is arranged between the at least one treatment chamber (20) and the at least one discharge device (40) and a respective discharge chamber (61) is formed between the at least one screen device (60) and the at least one discharge opening (41);

characterized in that the at least one screen device is selected from the group consisting of:
(a) screen devices having respectively, at least one passage opening (62) for the passage of the treatment liquid (F) into the at least one discharge chamber (61), which is arranged at the height level of the transport plane (E) for the material (B) to be treated, and

(b) screen devices forming respectively, at least partially a bottom of the treatment chamber (20) and essentially extends parallel to a lower wall of the discharge chamber (61) and is spaced from the latter, so that a passage distance is formed between the lower wall of the discharge chamber (61) and the screen device (60), the screen device (60) forming a passage opening (62).

US Pat. No. 9,057,145

ELECTRODEPOSITION METHOD WITH ANALYSIS OF THE ELECTROLYTIC BATH BY SOLID PHASE EXTRACTION

Atotech Deutschland GmbH,...

1. Method for electrodepositing a metal layer from an electrolytic bath, wherein the concentrations of at least two components
of the electrolytic bath are monitored, wherein the following steps are carried out:
(a) a sample is taken from the electrolytic bath;
(b) the sample is supplied to a column for solid phase extraction, which contains a solid sorbing agent;
(c) the column is subjected to a washing procedure with a first eluent, wherein the at least two components remain on the
column, and undesired components are eluted from the column;

(d) the at least two components are eluted from the column by a second eluent;
(e) the concentrations of the at least two components in the eluate obtained in step (d) are determined by photometry, polarography
or refractometry without separating the at least two components from each other and without use of high performance liquid
chromatography, wherein the monitoring of the concentration of the at least two components is carried out in combination with
a dosing system, which, depending on the result of the determination of the concentrations, supplies the corresponding fresh
amount of the at least two components; and wherein the sequence of steps (a) to (e) is repeated at regular intervals of one
minute to 10 hours.

US Pat. No. 9,758,874

PLATING BATH COMPOSITION AND METHOD FOR ELECTROLESS PLATING OF PALLADIUM

Atotech Deutschland GmbH,...

1. An aqueous acidic plating bath composition for electroless deposition of palladium, comprising
(i) a source for palladium ions,
(ii) a nitrogenated complexing agent for palladium ions,
(iii) a reducing agent selected from the group consisting of formic acid, derivatives and salts thereof,
(iv) a water-soluble stabilizing agent selected from the group consisting of aromatic compounds comprising at least two residues
wherein at least one residue is a hydrophilic residue and at least one residue has a negative mesomeric effect, and

wherein the at least one hydrophilic residue is selected from the group consisting of hydroxyl, carboxyl, sulfonate and salts
thereof; and

wherein the at least one residue having a negative mesomeric effect is selected from the group consisting of nitro, nitrile,
acetyl, carboxyl and sulfonate.

US Pat. No. 9,441,299

METHOD FOR ACTIVATING A COPPER SURFACE FOR ELECTROLESS PLATING

Atotech Deutschland GmbH,...

1. A method for activating a copper or copper alloy surface for depositing a metal or metal alloy layer by electroless (autocatalytic)
plating thereon comprising, in this order, the steps of
i. providing a substrate comprising a copper or copper alloy surface,
ii. contacting said substrate directly with the following components
a. an aqueous solution containing a source of palladium ions,
b. an aqueous solution containing a phosphonate compound
c. an aqueous solution containing a source of halide ions and
iii. depositing a metal or metal alloy layer onto the activated copper or copper alloy surface obtained in step ii. by electroless
plating wherein no organic acid or salt thereof comprising a carboxylic group without phosphonate group is used in step ii.

US Pat. No. 9,249,510

METHOD FOR REGENERATING A PLATING COMPOSITION

Atotech Deutschland GmbH,...

1. Method for regenerating a plating composition which is suitable for depositing at least one first metal on a substrate
(10) and which is accommodated by at least one plating device (100), said plating composition containing said at least one first metal in an ionic form and at least one second metal in an
ionic form, wherein said at least one second metal may be provided in a higher and in a lower oxidation state and, when it
is provided in a lower oxidation state, is capable of reducing said at least one first metal being in the ionic form to a
metallic state, said method comprising:
(a) Providing a regeneration device (200) having a working electrode (205) and a counter electrode (206), said working electrode (205) being disposed in a working electrode compartment (202) and said counter electrode (206) being disposed in a counter electrode compartment (203), said working electrode compartment (202) and said counter electrode compartment (203) being separated from each other by an ion selective membrane (204), wherein said counter electrode compartment (203) accommodates a counter electrode liquid;

(b) Removing at least part of said plating composition from said at least one plating device (100);

(c) Contacting at least a fraction of said removed plating composition with said working electrode (205) of said regeneration device (200) and polarizing said working electrode (205) cathodically, so that said at least one second metal being provided in the higher oxidation state is reduced to the lower
oxidation state and said at least one first metal is deposited on the working electrode (205) in the metallic state, thereby yielding a first portion of said removed composition; thereafter

(d) Removing said first portion from said removed composition and then contacting a remainder of said removed composition
with said working electrode (205) having said at least one first metal having been deposited thereon in method step (c) in the metallic state and polarizing
said working electrode (205) anodically, so that said at least one first metal being deposited on said working electrode (205) in the metallic state is dissolved into said remainder of said removed composition to form said at least one first metal
in the ionic form, thereby yielding a second portion of said removed composition; thereafter

(e) Returning said first and second portions to said at least one plating device (100) to result in said plating composition containing said at least one first metal in the ionic form and said at least one second
metal being provided in the lower oxidation state, so that said plating composition is capable of reducing said at least one
first metal being in the ionic form to the metallic state.

US Pat. No. 9,650,722

CHROME-PLATED PART AND MANUFACTURING METHOD OF THE SAME

NISSAN MOTOR CO., LTD., ...

1. A method of manufacturing a chrome-plated part, comprising:
forming a corrosion distribution plating layer configured for corrosion current distribution; a bright nickel plating layer;
and a non-sulfur nickel plating layer over a body, wherein the bright nickel plating layer is provided between the corrosion
distribution plating layer and the non-sulfur nickel plating layer, and the non-sulfur nickel plating layer is more noble
potential than the bright nickel plating layer;

forming a 0.05 to 2.5 micrometers thick trivalent chromium plating layer on the corrosion distribution plating layer using
basic chromium sulfate as a metal source, the trivalent chromium plating layer having a composition comprising 3 to 19 at
% of C, 55 to 95 at % of Cr, 1 to 22 at % of O, and 1 to 7 at % of Fe and having 5000/cm2 or more of micropores;

forming a not less than 7 nm thick chromium compound film on the trivalent chromium plating layer by cathode acidic electrolytic
chromating,

wherein the cathode acidic electrolytic chromating is performed at a current density of 0.1 to 1.0 A/dm2 for 10 to 90 seconds in a bath containing at least 20 to 40 g/l of any one of chromate and chromic anhydride and having a
pH of 1.0 to 5.5 and a temperature of 20 to 70° C., and

wherein forming the corrosion distribution plating layer is carried out in a microporous nickel plating bath so that the 5000/cm2 or more of micropores are produced in the trivalent chromium plating layer.

US Pat. No. 9,435,047

PROCESS FOR CORROSION PROTECTION OF IRON CONTAINING MATERIALS

Atotech Deutschland GmbH,...

1. A process for corrosion protection of an iron-containing substrate comprising, in this order, the steps of
(i) providing a substrate made of an iron-containing material,
(ii) electroplating onto said substrate a first zinc-nickel alloy layer having a nickel concentration in the range of 6 to
15 wt.-%,

(iii) thereon, electroplating a second zinc-nickel alloy layer having a nickel concentration in the range of 12 to 30 wt.-%
onto the first zinc-nickel alloy layer with the proviso that the concentration of nickel in the second zinc-nickel alloy layer
is higher than the nickel concentration in the first zinc-nickel alloy layer, and

(iv) depositing a black passivation layer onto the second zinc-nickel alloy layer,
wherein an acidic zinc-nickel electrolyte used for electroplating the first zinc-nickel alloy layer and an acidic zinc-nickel
electrolyte used for electroplating the second zinc-nickel alloy layer are the same acidic zinc-nickel electrolyte and

wherein the nickel concentrations in both zinc-nickel alloy layers are adjusted by changing pH value, temperature, or both
the pH value and the temperature of one or both of the acidic zinc-nickel electrolyte used for electroplating the first zinc-nickel
alloy layer and the acidic zinc-nickel electrolyte used for electroplating the second zinc-nickel alloy layer during the electroplating
steps.

US Pat. No. 9,332,652

PROCESS FOR ETCHING A RECESSED STRUCTURE FILLED WITH TIN OR A TIN ALLOY

Atotech Deutschland GmbH,...

1. A process for manufacture of a printed circuit board or an integrated circuit, comprising
depositing tin or a tin alloy on a substrate to fill recessed structures and forming an excess layer of tin or tin alloy,
and then etching away the excess layer of tin or tin alloy comprising the steps of

a. providing the substrate having the recessed structures filled with tin or a tin alloy and the excess layer of tin or tin
alloy,

b. providing an aqueous etching solution consisting of a source of hydroxide ions and a nitro-substituted aromatic sulfonic
acid and having a pH value greater than 7,

c. contacting said substrate with said aqueous etching solution at a temperature of 30 to 70° C. for a time ranging from 60
seconds to 120 seconds for removing said excess tin or tin alloy layer on top of said recessed structures filled with tin
or a tin alloy, wherein the contacting is sufficient to remove only the excess layer of tin or tin alloy but not to form dimples
in the tin or tin alloy filling the recessed structures.

US Pat. No. 9,441,304

AQUEOUS COMPOSITION FOR ETCHING OF COPPER AND COPPER ALLOYS

Atotech Deutschland GmbH,...

1. An aqueous composition for etching of copper and copper alloys comprising a source for Fe3+ ions, at least one acid, at least one triazole or tetrazole derivative, and at least one etching additive selected from the
group consisting of N-alkylated iminodipropionic acid, salts thereof, modified polyglycol ethers and quaternary ureylene polymers,
wherein the quaternary ureylene polymer is selected from polymers according to formulae (IX) and (X)

wherein n is an integer ranging from 1 to 40, and wherein monomer A is derived from a diamino compound represented by compounds
according to formulae (XI) to (XIII):


wherein R21, R22, R25, and R26 are independently selected from the group consisting of a substituted or unsubstituted hydrocarbon residue with 1 to 10 carbon
atoms and

R23, R24 and R27 are independently selected from (CH2)p, wherein p stands for an integer of 2 to 12, or for a —[CH2CH2O]m—CH2CH2— group, wherein m is between 1 and 40,

wherein monomer L is selected from the group consisting of
—(CH2)p—, wherein p is an integer between 1 and 12,

—CH2—CH(OH)—CH2—, —[CH2O]q—CH2CH2— and —[CH2CH2O]q—CH2CH2—, wherein q is an integer between 1 and 40, and

wherein the at least one etching additive is a quaternary ureylene polymer according to formula (IX) wherein A is selected
from a monomer according to formula (XI) wherein R21, R22, R25 and R26 are methyl and R23 and R24 are —(CH2)3—, and L is a —(CH2)2—O—(CH2)2— residue.

US Pat. No. 9,399,820

ELECTROLESS NICKEL PLATING BATH

Atotech Deutschland GmbH,...

1. An ammonia- and lead-free electroless nickel plating bath for deposition of nickel phosphorus alloys having a phosphorus
content of 6 to 9 wt.-% comprising
i. a source of nickel ions, at a concentration of 2.5 g/l to 4 g/l,
ii. a source of hypophosphite ions, at a concentration of 20 g/l to 27 g/l,
iii. a complexant mixture comprising
a) at least one first complexant at a concentration of from 1 g/l to 50 g/l selected from the group consisting of hydroxy
carboxylic acids, dihydroxy carboxylic acids and salts thereof and

b) at least one second complexant at a concentration of from 0.2 g/l to 10 g/l selected from the group consisting of iminosuccinic
acid, iminodisuccinic acid, salts and derivatives thereof,

iv. a stabilizer mixture comprising
a) bismuth ions, at a concentration of 0.5 mg/l to 30 mg/l and
b) at least one compound selected from the group consisting of mercapto benzoic acids, mercapto carboxylic acids and mercapto
sulfonic acids and salts thereof, at a concentration of 0.1 mg/l to 100 mg/l,

wherein the bath has a pH in the range from 6.5 to 11.5.

US Pat. No. 9,076,773

WIRE BONDABLE SURFACE FOR MICROELECTRONIC DEVICES

Atotech Deutschland GmbH,...

1. A semiconducting substrate comprising at least one metal layer sequence to produce a metal wire bondable surface wherein
said layer sequence consists in this order of
(i) a plurality of adjacent contact areas, wherein the adjacent contact areas are positioned within 5 ?m of each other,
(ii) a barrier layer selected from the group consisting of Co—Mo—P, Co—W—P, Co—Mo—B, Co—W—B, Co—Mo—B—P or Co—W—B—P alloys,wherein the thickness of said barrier layer ranges from 0.05 to 0.15 ?m and
(iii) pure palladium as a first bonding layer having a thickness in the range of 0.05 to 0.3 ?m,wherein the stack further comprises a second bonding layer on top of the first bonding layer, the second bonding layer is
selected from the group consisting of gold and gold alloys, and the thickness of the second bonding layer ranges from 0.02
to 0.1 ?m,
wherein a total thickness of said layer sequence is sufficient to provide both reduced risk of bridging and sufficient mechanical
stability to prevent damage to the substrate during metal wire bonding operations.

US Pat. No. 9,322,107

POLYMERS HAVING TERMINAL AMINO GROUPS AND USE THEREOF AS ADDITIVES FOR ZINC AND ZINC ALLOY ELECTRODEPOSITION BATHS

ATOTECH DEUTSCHLAND GMBH,...

1. Electrolyte bath for electrodeposition of a zinc or zinc alloy layer, wherein the electrolyte bath contains (i) zinc cations
and optionally additional metal ions and (ii) a polymer of the following formula I
A-[-L-A-]n-L-A  (I)

wherein A represents a unit derived from a diamino compound of one of the following formulae II to VII

wherein
X and Y each can be the same or different and represent O or NR, wherein R stands for H or C1-C6-alkyl,

Z each may be the same or different and represents O or S,
R1, R2, R5, and R6 each may be the same or different and represent a substituted or unsubstituted hydrocarbon residue with
1 to 10 carbon atoms, and

R3, R4, R8 each may be the same or different and represent (CH2)p, wherein p stands for an integer of 2 to 12 or for a [CH2CH2O]m—CH2CH2— group, wherein m is between 1 and 40,

wherein L stands for a divalent residue, which is selected from the group consisting of
—(CH2)q—, wherein g is between 1 and 12;

—CH2—CH(OH)—CH2—; and

—[CH2CH2O]r—CH2CH2—, wherein r is between 1 and 40;

wherein the single units A may be the same or different,
wherein the single units L may be the same or different,
wherein n represents an integer and n>0, and
wherein the polymer chain has units A at both ends.
US Pat. No. 9,822,034

METHOD FOR ELECTROLESS PLATING

Atotech Deutschland GmbH,...

1. A method for electroless plating comprising in this order the steps of
(i) providing a non-conductive substrate having on at least one side attached thereto a metal or metal alloy structure selected
from the group consisting of molybdenum, titanium, zirconium, aluminium, chromium, tungsten, niobium, tantalum and alloys
thereof,

(ii) contacting said substrate with an activator comprising palladium ions,
(iii) contacting said substrate with an aqueous solution containing at least one nitrogen-containing substance selected from
the group consisting of quaternary ammonium polymers, polyamido amines, tetra-ammonium hydroxy compounds having alkyl groups
with 2 to 6 carbon atoms, alkanol amines, quaternary ammonium salts based on fatty amines and quaternised aliphatic amine
ethoxylates and mixtures thereof, and

(iv) depositing a metal or metal alloy onto said activated surface by means of electroless plating.
US Pat. No. 9,551,073

METHOD FOR DEPOSITING A FIRST METALLIC LAYER ONTO NON-CONDUCTIVE POLYMERS

Atotech Deutschland GmbH,...

1. A method for depositing a first metal or metal alloy layer onto a non-conductive polymer comprising, in this order, the
steps of
(i) providing a non-conductive polymer,
(ii) contacting the non-conductive polymer with an etching solution comprising 0.75 to 3.6 g/l permanganate ions in 60 to
80 vol.-% sulfuric acid,

(iii) contacting the etched non-conductive polymer with an activator solution comprising a noble metal and
(iv) depositing a first metal or metal alloy layer by a wet-chemical method onto the activated non-conductive polymer,
wherein the etching solution further comprises phosphoric acid and the density of the etching solution is adjusted with the
phosphoric acid to a range of 1.70 to 1.82 g/ml.

US Pat. No. 9,441,306

METHOD FOR CATHODIC CORROSION PROTECTION OF CHROMIUM SURFACES

Atotech Deutschland GmbH,...

1. A method for cathodic corrosion protection of a chromium surface, the method comprising in this order the steps of
(i) providing a substrate having a chromium surface and at least one intermediate layer between the substrate and the chromium
surface selected from the group consisting of nickel, nickel alloys, copper and copper alloys,

(ii) contacting said substrate with an aqueous solution comprising at least one compound containing phosphorous according
to formulae II. and V.:


wherein R is selected from the group consisting of H, unsubstituted C1-C20-alkyl, linear or branched, unsubstituted C1-C6-alkaryl, linear or branched, and unsubstituted aryl, R2 and R3 can be equal or different and are independently selected from
the group consisting of H, NH4+, Li+, Na+, K+, unsubstituted C1-C20-alkyl, linear or branched, unsubstituted C1-C6-alkaryl, linear or branched, and unsubstituted aryl, and wherein n is an integer ranging from 1 to 15, and

at least one additive which increases the solubility of the at least one compound containing phosphorus, wherein the at least
one additive which increases the solubility of the at least one compound containing phosphorous is a polyether compound;

while passing an electrical current through said substrate, at least one anode and the aqueous solution wherein said substrate
serves as cathode

and thereby forming a corrosion protection layer on the chromium surface.

US Pat. No. 9,181,622

PROCESS FOR METALLIZING NONCONDUCTIVE PLASTIC SURFACES

Atotech Deutschland GmbH,...

1. Process for metallizing electrically nonconductive plastic surfaces of articles, comprising the separate process steps
of:
A) fastening the article to a rack,
B) etching the plastic surface with an etching solution;
C) treating the plastic surface with a solution of a metal colloid or of a compound of a metal, the metal being selected from
the metals of transition group I of the Periodic Table of the Elements and transition group VIII of the Periodic Table of
the Elements, and

D) metallizing the plastic surface with a metallizing solution;
wherein the rack is treated with a solution comprising iodate ions and the treatment of the rack with a solution comprising
iodate ions is performed prior to process step C).

US Pat. No. 9,399,824

PYROPHOSPHATE-CONTAINING BATH FOR CYANIDE-FREE DEPOSITION OF COPPER-TIN ALLOYS

Atotech Deutschland GmbH,...

1. A method for the galvanic deposition of glossy and even copper-tin alloy coatings, comprising (i) introducing a substrate
to be coated into an aqueous cyanide-free pyrophosphate-based electrolyte bath and (ii) galvanically depositing a copper-tin
alloy coating on the substrate,
wherein the bath has a pH of 3 to 9 and comprises water-soluble copper salts, water-soluble tin salts, a reaction product
of a secondary monoamine with a diglycidyl ether and 0.1 to 50 g/l of N-methylpyrrolidone,

wherein the secondary monoamine is morpholine and the diglycidyl ether is selected from the group consisting of glycerol diglycidyl
ether, poly(propylene glycol) diglycidyl ether, poly(ethylene glycol) diglycidyl ether and mixtures thereof.

US Pat. No. 9,506,158

METHOD FOR COPPER PLATING

Atotech Deutschland GmbH,...

1. Method for copper electroplating a substrate in an electroplating bath, wherein the electroplating bath comprises:
(i) at least one source of copper ions, and
(ii) at least one acid;
wherein the method comprises bringing the substrate into contact with a leveller additive, wherein: (i) the leveller additive
is comprised in an aqueous pre-treatment composition prior to the copper electroplating, or (ii) the leveller additive is
comprised in the electroplating bath during the copper electroplating or (iii) the leveller additive is comprised both in
the aqueous pre-treatment composition prior to the copper electroplating and in the electroplating bath during the copper
electroplating, and

wherein the leveller additive is selected from molecules according to formula (I):
wherein Y is selected from the group consisting of —(NR4)—, —(CH2)—, —O— and —S—;n ranges from 0 to 6;R1 and R2 are independently selected from hydrogen and C1 to C4 alkyl, linear and branched,R3 is selected from hydrogen, C1 to C4 alkyl, linear and branched, lithium, sodium, potassium and ammonium;A is an unsubstituted triazole andR4 is selected from the group consisting of hydrogen and C1 to C4 alkyl, linear and branched, and
wherein the method further comprises bringing the substrate into contact with the electroplating bath and applying an electrical
current to the substrate in the electroplating bath.

US Pat. No. 9,401,466

METHOD FOR MANUFACTURE OF WIRE BONDABLE AND SOLDERABLE SURFACES ON NOBLE METAL ELECTRODES

Atotech Deutschland GmbH,...

1. A method for manufacture of wire bondable and/or solderable surfaces on noble metal electrodes comprising, in this order,
the steps of
i. providing a substrate having at least one noble metal electrode attached thereon,
ii. cleaning said at least one noble metal electrode,
iii. depositing onto said at least one noble metal electrode a seed layer selected from palladium and palladium alloys by
electroless plating from an aqueous plating bath wherein said plating bath has a temperature in the range of 60 to 90° C.
during deposition of said seed layer and wherein said plating bath comprises a source for palladium ions, a reducing agent
and a complexing agent for palladium ions,

iv. depositing an intermediate layer selected from nickel alloys and cobalt alloys onto said seed layer by electroless plating,
v. depositing at least one surface finish layer onto the intermediate layer by electroless plating wherein said at least one
surface finish layer is selected from the group consisting of palladium, palladium alloys, gold and gold alloys, with the
proviso that a single surface layer consisting of gold is deposited by immersion plating and the gold layer of a multilayer
surface finish is deposited either by immersion plating or electroless plating onto a palladium or palladium alloy layer.

US Pat. No. 9,783,891

IRON BORON ALLOY COATINGS AND A PROCESS FOR THEIR PREPARATION

Atotech Deutschland GmbH,...

1. An aqueous plating bath for the electroless deposition of iron boron alloy coatings, comprising
(i) at least one iron ion source;
(ii) at least one boron based reducing agent;
(iii) at least one complexing agent;
(iv) at least one pH buffer; and
(v) at least one base,
wherein the pH value of the aqueous plating bath is 11 or higher and the molar ratio of the boron based reducing agents in
relation to the iron ions in the aqueous plating bath is at least 6:1 and wherein it does not contain any intentionally added
further reducible metal ions or it comprises a second source of reducible metal ions in an amount of 0.01 to 10 mol-% based
on the amount of iron ions present in the aqueous plating bath.

US Pat. No. 9,752,244

GALVANIC NICKEL ELECTROPLATING BATH FOR DEPOSITING A SEMI-BRIGHT NICKEL

Atotech Deutschland GmbH,...

1. Galvanic nickel electroplating bath for depositing a semi-bright nickel coating characterized in that the electroplating
bath comprises at least one compound having the general formula (I)
wherein
R1=C1-C18 hydrocarbon moiety substituted with a SO3? group or C1-C4 hydrocarbon moiety substituted with a carboxylic group, or a salt thereof;

R2=NR3R4 moiety, OR5 moiety, or cyclic NR6 moiety, wherein R3, R4, R5=hydrogen or C1-C18 hydrocarbon moiety or C1-C18 hydrocarbon moiety substituted with at least an aromatic and/or a heteroaromatic group, wherein R3, R4 and R5 are identical or different;

R6=C3-C8 hydrocarbon moiety or C3-C8 hydrocarbon moiety, wherein at least one carbon atom is substituted by a heteroatom; and

n=1-3, and
wherein the pH-value of the electroplating bath ranges from 2 to 6.

US Pat. No. 9,458,541

METHOD FOR ELECTROLESS PLATING OF TIN AND TIN ALLOYS

Atotech Deutschland GmbH,...

1. A method for electroless plating of tin and tin alloys comprising the steps of
(i) providing a substrate having copper contact pads and a solder mask layer which exposes said copper contact pads,
(ii) depositing a sacrificial layer of copper by electroless plating directly onto the copper contact pads and
(iii) depositing a tin or a tin alloy by electroless plating onto the sacrificial layer of copper deposited in step (ii)
wherein the thickness ratio ranges from 0.3 to 0.8 and
wherein the thickness ratio as defined herein is the ratio of the thickness of the sacrificial layer of copper directly after
deposition in step (ii) and of the thickness of the tin or tin alloy layer deposited in step (iii).

US Pat. No. 9,435,041

METHOD AND REGENERATION APPARATUS FOR REGENERATING A PLATING COMPOSITION

ATOTECH DEUTSCHLAND GMBH,...

12. A Regeneration apparatus (300) for regenerating a plating composition which is suitable for depositing at least one first metal on a substrate (10), said regeneration apparatus (300) being especially adapted for regenerating a plating composition which is suitable for depositing at least one first metal
on a substrate (10) and which is accommodated by at least one plating device (100), said plating composition containing said at least one first metal in an ionic form and at least one second metal in an
ionic form, wherein said at least one second metal may be provided in a higher and in a lower oxidation state and, when it
is provided in a lower oxidation state, is capable of reducing said at least one first metal being in the ionic form to a
metallic state, wherein said plating composition is accommodated by at least one plating device (100) and contains at least one first metal in an ionic form and at least one second metal in an ionic form, wherein said at least
one second metal may be provided in a higher and in a lower oxidation state and, when it is provided in a lower oxidation
state, is capable of reducing said at least one first metal being in the ionic form to a metallic state, said regeneration
apparatus (300) comprising:
(a) at least one regeneration device (200) comprising:

i. a working electrode compartment (202) and a counter electrode compartment (203);

ii. a working electrode (205) being disposed in said working electrode compartment (202) and a counter electrode (206) being disposed in said counter electrode compartment (203);

iii. an ion selective membrane (204) separating said working electrode compartment (202) and said counter electrode compartment (203) from each other;

iv. an electric current supply for energizing said working electrode (205) and said counter electrode (206);

(b) means (250, 260, 257, 267) for removing at least part of said plating composition from said at least one plating device (100) and means (280, 285, 286) for contacting said removed plating composition with said working electrode (205);

(c) at least one first holding tank (230) being adapted for accommodating a first portion of said removed composition after said first portion of said removed composition
has been cathodically treated in said regeneration device (200);

(d) at least one second holding tank (240) being adapted for accommodating a second portion of said removed composition after said second portion of said removed composition
has been anodically treated in said regeneration device (200); and

(e) means (250, 260, 235, 245) for returning said first and second portions to said at least one plating device (100),

wherein said at least one first holding tank (230) and said at least one second holding tank (240) are in fluid connection with said at least one regeneration device (200);

(f) wherein said at least one working electrode (205) is made from said at least one first metal in the metallic state;

(g) wherein said at least one working electrode (205) is made of pieces of said at least one first metal in the metallic state and wherein said pieces of said at least one first
metal in the metallic state are contained in a container (207) which is made from an inert material;

(h) wherein said at least one first metal is tin; and
(i) wherein said ion selective membrane (204) is a cation selective membrane.

US Pat. No. 9,380,708

METHOD, HOLDING MEANS, APPARATUS AND SYSTEM FOR TRANSPORTING A FLAT MATERIAL TO BE TREATED AND LOADING OR UNLOADING APPARATUS

Atotech Deutschland GmbH,...

1. Device for transporting a flat material to be treated, which is mounted along an edge region by means of holding means,
for an installation for the chemical and/or electrochemical treatment of said material to be treated, wherein said device
is set up so as to transport the material to be treated within a plane of transport in a direction of transport, said device
comprising:
transporting means coupled to the holding means in a detachable manner and which are configured to move said holding means,
with the material to be treated mounted thereon, in the direction of transport; and

tensioning means for exerting, upon the holding means, a force which is directed within the plane of transport and transversely
to the direction of transport, the tensioning means comprising:

a movable bearing to guide the holding means; and
at least one magnet in order to exert a force on the movable bearing transversely to the direction of transport,
wherein the device is configured to exert, at least during a portion of the transportation of the material to be treated,
a force having a component which lies within the plane of transport and is directed transversely to the direction of transport,
upon at least one region of the material to be treated.

US Pat. No. 9,551,080

COPPER PLATING BATH COMPOSITION

Atotech Deutschland GmbH,...

1. An aqueous acidic copper electroplating bath comprising a source of copper ions, an acid and at least one ureylene polymer
selected from polymers according to Formulae (I), (II) and (III)

wherein A represents a unit derived from a diamino compound of the following Formulae (IV) and/or (V)

R1, R2, R5, and R6 are independently selected from the group consisting of substituted or unsubstituted hydrocarbon residues with 1 to 10 carbon
atoms, and —CH2CH2(OCH2CH2)a—OH, wherein a is an integer from 0 to 4,

R3 and R4 are independently selected from the group consisting of (CH2)p, wherein p is an integer from 2 to 12, and a —[CH2CH2O]m—CH2CH2— group, wherein m is an integer from 1 to 40,

Z may be the same or different and represents O or S,
x and y may be the same or different and are an integer selected from 1, 2 and 3
wherein A? represents a unit derived from a diamino compound of the following Formulae (VI)

wherein R7 and R8 are independently selected from the group consisting of hydrogen, a substituted or unsubstituted hydrocarbon residue with
1 to 16 carbon atoms, linear or branched alkyl, hydroxyethyl or —CH2CH2(OCH2CH2)a—OH, wherein a is an integer from 1 to 4, substituted or unsubstituted alkaryl, alkhetaryl, allyl or propargyl and

wherein L is a divalent residue, which is selected from the group consisting of —(CH2)s—, wherein s is an integer from 1 to 12,

—CH2—CH(OH)—CH2—, —[CH2O]q—CH2CH2—, —[CH2CH2O]q—CH2CH2—,

—CH2—CH(SH)—CH2—, and —[CH2S]q—CH2CH2—, —[CH2CH2S]q—CH2CH2— wherein q is an integer from 1 to 40,

—CH2—CH(OH)—CH2—R9-CH2—CH(OH)—CH2— wherein R9 is selected from the group consisting of a substituted or unsubstituted hydrocarbon residue, —O— CH2CH(OH)—CH2O— and —O—[CH2CH2O]q—CH2O—, wherein q is an integer from 1 to 40, and —CH2CH(OH)CH2—;

wherein the single units A may be the same or different,
wherein the single units A? may be the same or different
wherein the single units L may be the same or different,
wherein n represents an integer from 1 to 40, and
wherein the ureylene polymers according to Formulae (I), (II) and (III) have an amino residue at both ends and wherein said
aqueous acidic copper electroplating bath is essentially free of zinc ions, wherein the concentration of the ureylene polymer
according to Formulae (I), (II) and (Ill) ranges from 0.001 mg/l to 200 mg/l and wherein the aqueous acidic copper electroplating
bath has a pH value of ?1.

US Pat. No. 9,534,310

DEVICE FOR VERTICAL GALVANIC METAL, PREFERABLY COPPER, DEPOSITION ON A SUBSTRATE AND A CONTAINER SUITABLE FOR RECEIVING SUCH A DEVICE

Atotech Deutschland GmbH,...

1. A device for vertical galvanic metal deposition on a substrate wherein the device comprises
at least a first anode element having at least one through-going conduit,
at least a first carrier element comprising at least one through-going conduit,
at least a first fluid feeding element for leading a treating solution inside said at least first carrier element,
at least a first fastening means and
at least a first electrical connecting element;
wherein said at least first anode element and said at least first carrier element are firmly connected to each other; and
wherein said at least first fastening means for fixing the entire device detachable inside of a container suitable for receiving
such a device and said at least first electrical connecting element for providing electrical current to the at least first
anode element are arranged both on the backside of said at least first carrier element;

wherein the first anode element and the first carrier element comprise a plurality of through-going conduits, which are respectively
arranged on the respective surface of said first anode element or said first carrier element in a form of concentric circles
around the respective center of the first anode element or the first carrier element;

wherein the plurality of through-going conduits of the first anode element are going through the first anode element in a
form of straight lines having an angle relating to the perpendicular on the first anode element surface between 0° and 80°;
and

wherein the plurality of through-going conduits of the first carrier element are going through the first carrier element in
a form of straight lines having an angle relating to the perpendicular on the carrier element surface between 10° and 60°.

US Pat. No. 9,920,432

ADHESION PROMOTING AGENTS FOR METALLIZATION OF SUBSTRATE SURFACES

Atotech Deutschland GmbH,...

22. Method of plating a metal onto a substrate comprising the steps of
i. contacting the substrate with a solution containing nanometer-sized particles having at least one attachment group bearing
a functional chemical group suitable for binding to the substrate, and forming a layer of said nanometer-sized particles bound
to at least a portion of a surface of the substrate; and thereafter

ii. metal plating the substrate by applying a wet-chemical plating method,
and wherein the layer of said nanometer-sized particles remain between the substrate surface and the plated metal,
wherein the at least one attachment group has the general Formula (I)
-B-L-FG  (I),
wherein B is a binding group, L is a linking group and FG is the functional chemical group, and
wherein the binding group B represents
a. —Si(R1R2)—, wherein R1 and R2 independently of each other represent alkoxy groups having from 1 to 12 carbon atoms, alkyl groups having from 1 to 12 carbon
atoms, halogen atoms and a bond to oxygen atoms originating from the nanometer-sized particle and/or further attachment groups;
or

b. —CH2—R3—, —CO—NH—, unsubstituted or substituted aryl, wherein R3 represents —CHOH—CH2—O—, —CHOH—CH2—; a linear unsubstituted or substituted hydrocarbon group having from 1 to 5 carbon atoms.

US Pat. No. 9,745,665

METHOD AND APPARATUS FOR ELECTROLYTICALLY DEPOSITING A DEPOSITION METAL ON A WORKPIECE

ATOTECH DEUTSCHLAND GmbH,...

1. Method for electrolytically depositing a deposition metal on a workpiece (WS), comprising the following method steps:
(a) providing an electrolytic metal depositing apparatus, in which the workpiece (WS), at least one anode and a deposition
electrolyte (AE) are arranged and which has a device for electric current generation and at least one current feeding device
wherein each has at least one electrical contact element for making electrical contact with the workpiece (WS);

(b) bringing the at least one electrical contact element into contact with the workpiece (WS); and
(c) feeding electric current to the workpiece (WS) via the at least one electrical contact element in order that the deposition
metal electrodeposits on the workpiece (WS);
wherein before method step (b), in a further method step (d), the deposition metal is electrodeposited on a respective contact
area on the at least one electrical contact element.

US Pat. No. 9,593,247

COMPOSITION AND METHOD FOR REMOVAL OF ORGANIC PAINT COATINGS FROM SUBSTRATES

Atotech Deutschland GmbH,...

1. Non-aqueous stripping composition for removing cured organic paint from substrates comprising
i. a source of hydroxide ions;
ii. a high-boiling alcohol having a boiling point of at least 150° C.; and
iii. at least one surfactant represented by the following formula
R—O—(CH2CH2O)nH and

 wherein R is an alkyl chain, linear or branched having a 2 to 30 carbon atom chain length, and n ranges between 2 and 100,
wherein the composition is essentially free of added water and
 wherein the high-boiling alcohol is at a concentration in the range from 70 to 99 wt % of the composition.

US Pat. No. 9,763,336

METHODS OF TREATING METAL SURFACES AND DEVICES FORMED THEREBY

Atotech Deutschland GmbH,...

1. A method of treating a metal surface to promote adhesion between the metal surface and an organic material, comprising
the steps of:
contacting the metal surface with a composition containing an oxidizing agent and a surface modifier compound, to oxidize
the metal surface to form a metal oxide layer on the metal surface; and to terminate growth of the metal oxide layer by a
self limiting reaction between the metal oxide layer and the surface modifier compound,

wherein the method further comprises a step of conditioning the metal oxide layer with a reducing agent, the reducing agent
being selected from any one or more of formaldehyde, sodium thiosulfate, sodium borohydride, borane reducing agent represented
by the following formula BH3NHRR?, wherein R and R? are each selected from a group consisting of H, CH3 and CH2CH3,

wherein the contacting and the conditioning are carried out so as to not roughen the metal surface relative to the roughness
of the metal surface prior to the contacting.

US Pat. No. 9,669,361

MEMBRANE ELECTROLYSIS STACK, ELECTRODIALYSIS DEVICE INCLUDING THE STACK AND METHOD FOR THE REGENERATION OF AN ELECTROLESS PLATING BATH

ATOTECH DEUTSCHLAND GMBH,...

15. An electrodialysis device for the regeneration of an electroless plating bath, the device comprising,
at least one first partial electrodialysis device, said at least one first partial electrodialysis device arranged between
at least one first anode and at least one first cathode, said at least one first partial electrodialysis device including
a membrane electrolysis stack, said membrane electrolysis stack comprising a plurality of membranes and electrolyte compartments
arranged between the membranes, said plurality of membranes including at least one first membrane and at least one second
membrane with first membranes and second membranes alternating in succession in the membrane electrolysis stack, at least
one of the first membranes being an anion exchange membrane, and said first membranes otherwise being selected from the group
consisting of anion exchange membranes and bipolar membranes, and every second membrane being selected from the group consisting
of monoselective anion exchange membranes, monoselective cation exchange membranes, and proton-selective exchange membranes,
each first membrane and the second membrane immediately succeeding each first membrane in the membrane electrolysis stack
being selected independently of each other,

at least one second partial electrodialysis device, said at least one second partial electrodialysis device arranged between
at least one second anode and at least one second cathode, said at least one second partial electrodialysis device including
a membrane electrolysis stack, said membrane electrolysis stack comprising a plurality of membranes and electrolyte compartments
arranged between the membranes, said plurality of membranes including at least one first membrane and at least one second
membrane with first membranes and second membranes alternating in succession in the membrane electrolysis stack, at least
one of the first membranes being a bipolar membrane, and first membranes otherwise being selected from the group consisting
of anion exchange membranes and bipolar membranes, and every second membrane being selected from the group consisting of monoselective
anion exchange membranes, monoselective cation exchange membranes, and proton-selective exchange membranes, each first membrane
and the second membrane immediately succeeding each first membrane in the membrane electrolysis stack being selected independently
of each other,

said first and said second partial electrodialysis devices each including electrolyte diluate compartments located on the
cathode side to the at least one first membranes, said diluate compartments being adapted to contain the electrolyte to be
regenerated, and electrolyte concentrate compartments located on the cathode side to the at least one second membranes, the
concentrate compartments being adapted to contain a concentrate liquid,

wherein the concentrate compartments are adapted to receive concentrate liquid containing interfering ions taken up from the
electrolyte to be regenerated,

wherein the diluate compartments of said first partial electrodialysis device are hydraulically connected to the dilute compartments
of second partial electrodialysis devices, and

wherein the concentrate compartments of said first partial electrodialysis device are hydraulically connected to the concentrate
compartments of second partial electrodialysis devices.

US Pat. No. 9,713,266

METHOD FOR MANUFACTURE OF FINE LINE CIRCUITRY

Atotech Deutschland GmbH,...

1. A method for manufacture of fine line circuitry comprising, in the following order, the steps of
(i) providing a dielectric build-up layer having a front side surface area and a back side surface area and wherein at least
a portion of the back side surface area comprises at least one copper area and wherein a dielectric layer is attached to said
back side surface area and wherein an adhesion promoting layer consisting of organosilane compounds is attached to the front
side surface area of the build-up layer, wherein the adhesion promoting layer is formed by

(a) treating said front side surface area with a solution comprising at least one organosilane compound to form the adhesion
promoting layer consisting of the organosilane compounds, and

(b) treating said adhesion promoting layer consisting of the organosilane compounds with a solution comprising an oxidizing
agent,

(ii) depositing a first conductive layer onto the adhesion promoting layer,
(iii) forming at least one opening which extends through the first conductive layer, the adhesion promoting layer and the
build-up layer to the at least one copper area,

(iv) cleaning the dielectric side walls and the copper area of the at least one opening to obtain cleaned side walls and a
cleaned copper area,

(v) forming a second conductive layer only on the cleaned side walls wherein the second conductive layer is selected from
the group consisting of electrically conductive polymers, colloidal particles comprising a noble metal, and electrically conductive
carbon particles,

(vi) applying a resist layer onto the first conductive layer; and patterning said resist layer,
(vii) depositing a copper layer by electroplating into the at least one opening of the patterned resist layer,
(viii) removing the patterned resist layer and
(ix) removing those portions of the first conductive layer which are not covered by the electroplated copper layer.

US Pat. No. 9,930,786

DESMEAR MODULE OF A HORIZONTAL PROCESS LINE AND A METHOD FOR SEPARATION METHOD AND REMOVAL OF DESMEAR PARTICLES FROM SUCH A DESMEAR MODULE

Atotech Deutschland GmbH,...

1. Desmear module for a horizontal galvanic or wet-chemical process line for metal deposition on a substrate to be treated for a removal of precipitates comprising a desmear container being connectable to a desmear unit, a pump and at least a first liquid connection element for connecting said pump with the desmear unit, wherein said pump is in conjunction with said desmear unit by said at least first liquid connection element; and wherein a treatment liquid level is provided inside of the desmear module, which is above of an intake area of the pump characterized in thatthe desmear module further comprises at least a first liquid area, at least an adjacent second liquid area comprising the intake area of the pump, and at least a first separating element arranged between said at least first liquid area and said at least second liquid area,
wherein the first separating element is a non-permeable liquid weir being arranged below the treatment liquid level inside of the desmear module comprising an overflow edge to allow treatment liquid to flow from the first liquid area to the second liquid area or
wherein the first separating element is a permeable liquid weir going from the bottom of the desmear container up to an absolute height above the treatment liquid level inside of the desmear module,
wherein the term desmear module refers to a horizontal processing module being able to allow a desmear process step taking place inside it in order to remove smear from the drillings of the through-going conduits in substrates to be treated,
wherein the term desmear unit refers to a module of a horizontal process line containing flooding device elements, each adapted to direct a flow of desmear treatment liquid to one or both surfaces of the substrate to be treated, to remove residual smear of the raw material of the substrate to be treated out of the drilled though-going conduits.

US Pat. No. 9,631,294

DEVICE FOR VERTICAL GALVANIC METAL DEPOSITION ON A SUBSTRATE

Atotech Deutschland GmbH,...

1. Device for vertical galvanic metal deposition on a substrate wherein the device comprises at least a first device element
and a second device element, which are arranged in a vertical manner parallel to each other, wherein the first device element
comprises at least a first anode element having a plurality of through-going conduits and at least a first carrier element
having a plurality of through-going conduits, wherein said at least first anode element and said at least first carrier element
are firmly connected to each other; and wherein the second device element comprises at least a first substrate holder which
is adapted to receive at least a first substrate to be treated, wherein said at least first substrate holder is at least partially
surrounding the at least first substrate to be treated along its outer frame after receiving it; and wherein the distance
between the first anode element of the at least first device element and the at least first substrate holder of the second
device element ranges from 2 to 15 mm;
wherein the plurality of through-going conduits of the first carrier element of the first device element are going through
the first carrier element in form of straight lines having an angle relating to the perpendicular on the carrier element surface
between 10° and 60°.

US Pat. No. 9,650,718

ELECTROLESS COPPER PLATING SOLUTION

ATOTECH DEUTSCHLAND GMBH,...

1. An electroless aqueous copper plating solution comprising:
a source of copper ions;
a reducing agent or a source of a reducing agent; and
a combination of complexing agents, the combination comprising:
i) polyamino disuccinic acid, polyamino monosuccinic acid, or combinations thereof, and
ii) one or more of a compound which is selected from the group consisting of ethylenediamine tetraacetic acid, N?-(2-Hydroxyethyl)-ethylenediamine-N,N,N?-triacetic
acid, and N,N,N?,N?-Tetrakis (2-hydroxypropyl)ethylenediamine.

US Pat. No. 9,713,265

METHOD, TREATMENT STATION AND ASSEMBLY FOR TREATING A PLANAR MATERIAL TO BE TREATED

Atotech Deutschland GmbH,...

1. A method for treating a planar material to be treated, which is transported through an assembly for an electrolytic or
wet-chemical treatment of the material to be treated,
the material to be treated being formed with edge regions and a useful region between the edge regions, the useful region
configured to receive treatment via a treatment liquid;

the material to be treated being subjected in a treatment station of the assembly to the treatment liquid covering the material
to be treated such that the material to be treated is submerged in the treatment liquid, the treatment liquid being accumulated
up to an operating level in a treatment region of the treatment station, the material to be treated being transported through
the treatment station along a transport direction;

in the treatment station, a roll with a roll surface being arranged such that the roll surface is spaced apart at least from
the useful region of the material to be treated so that a gap remains between the roll surface and the useful region of the
material to be treated;

the roll being arranged such that a lower part of the roll surface is submerged in the treatment liquid which is accumulated
up to the operating level and an upper part of the roll surface projects from the treatment liquid which is accumulated up
to the operating level so that the treatment liquid covers the roll surface up to a height which is equal to the operating
level; and

the roll being driven rotatably so that at the gap a relative speed is produced between the lower part of the roll surface
submerged in the treatment liquid and a surface of the material to be treated.

US Pat. No. 9,896,765

PRE-TREATMENT PROCESS FOR ELECTROLESS PLATING

Atotech Deutschland GmbH,...

1. A process for electroless (autocatalytic) metal and metal alloy plating comprising, in this order, the steps of
i. providing a substrate comprising a copper surface,
ii. contacting said substrate comprising the copper surface with a noble metal ion containing composition,
iii. contacting said substrate contacted in step ii with an aqueous pre-treatment composition comprising an acid, a source
for halide ions and an additive selected from the group consisting of
thiourea compounds according to formula (1)
wherein R1, R2 and R3 are independently selected from the group consisting of H, substituted C1 to C6 alkyl and unsubstituted C1 to C6 alkyl, and R4 is selected from the group consisting of H, substituted C1 to C6 alkyl, unsubstituted C1 to C6 alkyl and —N(R7)—C(S)—NR5R6 wherein R5, R6 and R7 are independently selected from the group consisting of H, substituted C1 to C6 alkyl and unsubstituted C1 to C6 alkyl,compounds according to formula (2)
R8—C(S)—NR9R10  (2)
wherein R8 is selected from the group consisting of H, substituted C1 to C6 alkyl and unsubstituted C1 to C6 alkyl and R9 and R10 are independently selected from the group consisting of H, substituted C1 to C6 alkyl and unsubstituted C1 to C6 alkyland polymers comprising thiourea groups,wherein the concentration of said additive ranges from 1 to 200 mg/l andwherein the pH value of the aqueous pre-treatment composition is ?3 and
iv. depositing a metal or metal alloy layer onto said substrate by electroless (autocatalytic) plating utilizing a plating
bath.

US Pat. No. 9,790,607

3-(CARBAMOYL) PYRIDINIUM-1-YL-PROPANE-1-SULFONATES USEFUL IN ELECTROPLATING BATHS

Atotech Deutschland GmbH,...

1. A chemical compound having general formula IA:

wherein in general formula IA, R3 and R4?-CH2CH3 or R3 and R4 taken together with the N atom form a pyrrolidine ring or a morpholine ring.

US Pat. No. 9,689,081

ELECTROPLATING BATH AND METHOD FOR PRODUCING DARK CHROMIUM LAYERS

Atotech Deutschland GmbH,...

1. An electroplating bath for deposition of a dark chromium layer on a workpiece, the electroplating bath comprising:
(A) trivalent chromium ions;
(B) carboxylate ions;
(C) at least one pH buffer substance; and
(D) at least one coloring agent,
wherein the at least one coloring agent comprises a coloring agent selected from:
2-Amino-4-methanesulfinyl-butyric acid,
1,1-Dioxo-1,2-dihydro-1lambda*6*-benzo[d]isothiazol-3-one,
Prop-2-yne-1-sulfonic acid,
Methanesulfinylmethane, and
2-(1,1,3-Trioxo-1,3-dihydro-1lambda*6*-benzo[d]isothiazol-2-yl)-ethanesulfonic acid, and
wherein the at least one coloring agent optionally further comprises at least one coloring agent selected from sulphur containing
compounds having the general Formula (II):


wherein
?X represents ?O, or a free electron pair;
R3 represents —R5, —CH?CH2, —CH2—CH?CH2, —CH?CH—CH3, —CH2—CH2—CH?CH2, —CH2—CH?CH—CH3, —CH?CH—CH2—CH3, —C?CH, —CH2—C?CH, —C?C—CH3, —CH2—CH2—C?CH, —CH2—C?C—CH3, —C?C—CH2—CH3, —C(—NH2)?NH,


R4 represents —R5, —OR5, —(CH2—)r—CH(—NH2)—COOH, —(CH2—)r—CH(—NH—CH3)—COOH, —(CH2—)r—CH(—N(—CH3)2)—COOH, —(CH2—)r—CH(—NH2)—CO—OCH3, or —(CH2—)r—CH(—NH2)—CO—OCH2—CH3;
R5 represents —H, —CH3, —CH2—CH3—CH2—CH2—CH3 or —CH2—CH2—CH2—CH3;

r is an integer from 0 to 4 or;
R3 and R4 taken together represent a linear chain structure in order to build one of the following ring structures including the central
sulphur atom of Formula (II):


R10 represents, —CH3, or —CH2—CH3 ;

or salts, tautomeric forms, betaine structures thereof; and
(E) ferrous ions.
US Pat. No. 9,738,790

PROCESS FOR FORMING CORROSION PROTECTION LAYERS ON METAL SURFACES

Atotech Deutschland GmbH,...

1. Process for forming corrosion protection layers on a surface of a metal or metal alloy, wherein the metal is zinc, aluminium
or magnesium, which comprises the following steps:
i) contacting of the surface of the metal or metal alloy with a first treatment solution comprising
chromium(III) ions,
metal ions selected from the metal or metal alloy, and
at least one complexing agent selected from the group consisting of carboxylic acids, polycarboxylic acids, hydroxycarboxylic
acids, aminocarboxylic acids, alcohols, amines and ethers,

where the first treatment solution has a pH of 1.0-3.0, wherein the contacting the surface of the metal or metal alloy with
the first treatment solution forms a passivation layer on the surface;

ii) then direct contacting of the passivation layer without a rinsing operation with a second treatment solution comprising
chromium(III) ions,
metal ions selected from the metal or metal alloy, and
at least one complexing agent selected from the group consisting of carboxylic acids, polycarboxylic acids, hydroxycarboxylic
acids, aminocarboxylic acids, alcohols, amines and ethers,

where the second treatment solution has a pH of 3.0-12.0, and
iii) drying directly after contacting with the two treatment solutions without a final rinsing step, wherein the direct contacting
in ii) without a rinsing operation with the second treatment solution durably fixes the corrosion protection layers to the
surface,

wherein the first treatment solution and the second treatment solution have the same composition but are set to different
pH values by addition of acid or base to set pH to the first treatment solution and to the second treatment solution.

US Pat. No. 10,151,980

METHOD FOR FINE LINE MANUFACTURING

Atotech Deutschland GmbH,...

1. Process for the manufacturing of fine line circuitry on a transparent substrate, the process comprises the following steps in the given order(i) providing a transparent substrate having a front side and a back side;
(ii) providing a pattern of light-shielding activation layer on the front side of said substrate; wherein the pattern of light-shielding activation layer is provided by the steps (ii.a) to (ii.c), in the following order:
(ii.a) depositing a treatment solution on the front side of the substrate, wherein the treatment solution contains carbon-based conductive, non-transparent particles having a size in the range of 0.1 nm to 1 ?m;
(ii.b) selectively curing at least one portion of the deposited treatment solution on the front side of said substrate with a laser and thereby forming a pattern of light-shielding activation layer; and
(ii.c) removing any uncured remnants of the treatment solution from the substrate;
(iii) placing a photosensitive composition on the front side of the substrate including the pattern of light-shielding activation layer;
(iv) photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation;
(v) removing any uncured remnants of the photosensitive composition; and thereby selectively exposing recessed structures on the pattern of light-shielding activation layer; and
(vi) depositing of at least one metal or metal alloy into the thus formed recessed structures by an electroless plating process.

US Pat. No. 10,174,250

COMPOSITION AND PROCESS FOR METALLIZING NONCONDUCTIVE PLASTIC SURFACES

Atotech Deutschland GmbH,...

1. Etching solution for treating nonconductive plastic surfaces, comprising(i) at least one acid,
wherein the concentration of the at least one acid ranges from 0.02-0.6 mol/l based on a monobasic acid; and
(ii) at least one permanganate salt selected from alkali metal permanganates and earth alkali metal permanganates,
wherein the permanganate salt is present in the etching solution in a concentration between 30 g/l and 250 g/l; and
(iii) at least one source for a metal ion, wherein the metal of the metal ion is selected from titanium, zirconium, niobium, molybdenum, ruthenium, rhodium, nickel, copper, silver, zinc and cadmium,
characterized in that the molar ratio of permanganate ions according to (ii) to metal ions according to (iii) ranges from 8.75:1 to 40:1.

US Pat. No. 9,909,216

PLATING BATH COMPOSITIONS FOR ELECTROLESS PLATING OF METALS AND METAL ALLOYS

Atotech Deutschland GmbH,...

1. An electroless plating bath for deposition of copper, nickel, cobalt or alloys thereof comprising at least one source for
metal ions and at least one reducing agent characterized in that the electroless plating bath further comprises a plating
rate modifier according to formula (I)
wherein monovalent residues R1 to R2, end group Y and divalent spacer group Z and index n are selected from the following groups
R1 is selected from the group consisting of —O—R3 and —NH—R4 wherein R3 is selected from hydrogen, lithium, sodium, potassium, rubidium, caesium, ammonium, alkyl, aryl, and R4 is selected from hydrogen, alkyl and aryl;

R2 is selected from the group consisting of hydrogen, alkyl, alkylaryl, and aryl;

Y is selected from the group consisting of

 wherein the monovalent residue R1? is selected from the group consisting of —O—R3? and —NH—R4? wherein R3? is selected from hydrogen, lithium, sodium, potassium, rubidium, caesium, ammonium, alkyl, aryl, and R4? is selected from hydrogen, alkyl and aryl and monovalent residue R2? is selected from the group consisting of hydrogen, alkyl, alkylaryl, and aryl and n? is an integer ranging from 1 to 2;

Z is

 wherein R5 to R8 are unbranched saturated alkylene residues wherein individual hydrogen bonded to said unbranched saturated alkylene residues
in each case are optionally substituted by a functional group selected from alkyl, aryl and hydroxyl (—OH); wherein p is an
integer ranging from 1 to 100, q is an integer ranging from 0 to 99, r is an integer ranging from 0 to 99, s is an integer
ranging from 0 to 99 with the proviso that the sum of (p+q+r+s) ranges from 1 to 100; and

n is an integer ranging from 1 to 2.
US Pat. No. 10,196,530

METHOD FOR INCREASING ADHESION BETWEEN A CHROMIUM SURFACE AND A LACQUER

Atotech Deutschland GmbH,...

1. A method for increasing the adhesion between a chromium surface and a lacquer comprising, in this order, the steps of(i) providing a substrate comprising a chromium surface,
(ii) contacting said substrate with an aqueous solution comprising at least one phosphorous compound according to formulae 1 and/or 2:
R1—P(O)(OR2)(OR3)  1
R1—O—P(O)(OR2)(OR3)  2
wherein R1 is a C1 to C12 alkyl group, linear, branched or cyclic and comprising at least one residue selected from the group consisting of phosphonate, phosphate, carboxylate, carboxyl, hydroxyl, amino, amide, thiol, nitrile, isonitrile, cyanate, isocyanate, epoxy, halogenide, alkenyl, ureido and thioureido, and R2 and R3 are independently selected from the group consisting of hydrogen, lithium, sodium, potassium, ammonium and C1 to C4 alkyl, wherein the C1 to C12 alkyl group in R1 can be interrupted by —O— and/or —N(R4)— with R4 selected from hydrogen and C1 to C4 alkyl,
and at least one additive which increases the solubility of the at least one phosphorous compound according to formulae 1 and/or 2,
while passing an electrical current through said substrate, at least one anode and the aqueous solution wherein said substrate serves as cathode and thereafter
(iii) depositing a lacquer onto said substrate
and thereby increasing the adhesion between said substrate and said lacquer.

US Pat. No. 9,963,797

COPPER ELECTROPLATING METHOD

Atotech Deutschland GmbH,...

1. A method for copper electroplating comprising, in this order, the steps of(i) providing a substrate comprising blind micro vias and a patterned resist layer having openings for trench formation and an aqueous acidic copper electrolyte comprising a leveler additive wherein the leveler additive is selected from the group consisting of ureylene polymers, aminocarboxylic acids functionalized with polyalkylene glycol residues, aminocarboxylic acids functionalized with polyalkylene imine residues, aminocarboxylic acids functionalized with polyvinyl alcohol residues, peptides functionalized with polyalkylene glycol residues, peptides functionalized with polyalkylene imine residues and peptides functionalized with polyvinyl alcohol residues,
(ii) operating said substrate as a cathode which is in contact with at least one anode and contacting said substrate with said aqueous acidic copper electrolyte, and,
(iii) applying to the substrate an electrical current, comprising at least one current pulse cycle consisting of one forward current pulse and one reverse current pulse and wherein the fraction of reverse charge to the forward charge applied to said substrate in said at least one current pulse cycle ranges from 0.1 to 5%,
wherein
the duration of the forward current pulse in said at least one current pulse cycle ranges from 10 to 1000 ms,
the duration of the reverse current pulse in said at least one current pulse cycle ranges from 0.05 to 1 ms, and
the current density of the reverse current pulse in said at least one current cycle ranges from 20 to 100 A/dm2,
wherein the applying fills the blind micro vias with copper and forms copper trenches having a rectangular cross-sectional shape, and
wherein the duration of the reverse current pulse is not more than 0.5% of the duration of the forward current pulse in said at least one current pulse cycle.

US Pat. No. 10,219,391

SOLUTION AND PROCESS FOR THE PRE-TREATMENT OF COPPER SURFACES USING AN N-ALKOXYLATED ADHESION-PROMOTING COMPOUND

Atotech Deutschland GmbH,...

1. A method for pre-treating a copper surface, the method comprising:(A) contacting the copper surface with a first solution comprising:
a) hydrogen peroxide;
b) an acid; and
c) a nitrogen-containing, five-membered, heterocyclic compound; and
(B) contacting the copper surface with a second solution comprising a nitrogen-containing, adhesion-promoting compound selected from a lactam, amide or polyamide and that is connected at one or more of its nitrogen atoms with at least one residue of formula (I)

wherein:
n is an integer from 1 to 100;
R1 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms;
R2 is hydrogen or a hydrocarbon residue with 1 to 6 carbon atoms; and
each R1 and R2 in a —(CHR1—CHR2—O)— moiety is selected independently of each R1 and R2 in another —(CHR1—CHR2—O)— moiety.

US Pat. No. 9,988,730

METHOD OF FORMING A METAL LAYER AND METHOD OF MANUFACTURING A SUBSTRATE HAVING SUCH METAL LAYER

Atotech Deutschland GmbH,...

1. A method of forming a metal layer on an insulator outer surface and on a copper layer outer surface of a substrate comprising an insulator and said copper layer laminated on part of the insulator, characterised in that simultaneously said insulator outer surface and the copper layer outer surface are subjected to a process (1) comprising treatment with an alkali metal hydroxide solution, a process (2) comprising treatment with an alkaline aqueous solution containing an aliphatic amine, a process (3) comprising treatment with an alkaline aqueous solution having a permanganate concentration of 0.3 to 3.5 wt % and a pH of 8 to 11, a process (4) comprising treatment with an acidic microemulsion aqueous solution containing a thiophene compound and an alkali metal salt of polystyrenesulphonic acid, and a process (5) comprising copper electroplating, which are implemented sequentially.

US Pat. No. 10,174,432

ELECTROPLATING BATH AND METHOD FOR PRODUCING DARK CHROMIUM LAYERS

Atotech Deutschland GmbH,...

1. An electroplating bath for deposition of a dark chromium layer on a workpiece, the electroplating bath comprising:(A) trivalent chromium ions;
(B) carboxylate ions;
(C) at least one pH buffer substance; and
(D) a mixture of coloring agents, comprising at least one coloring agent having the general Formula (I) and at least one coloring agent having the general Formula (II);
wherein general Formula (I) is defined as:

wherein
n, p, q are independently of each other integers from 0 to 4;
R1 represents —H, —OH, —COOH, —CO—OCH3, —CO—OCH2—CH3, (—O—CH2—CH2—)m—OH, —CH(—NH2)—COOH, —CH(—NH—CH3)—COOH, —CH(—N(—CH3)2)—COOH, —CH(—NH2)—CO—OCH3, —CH(—NH2)—CO—OCH2—CH3, —CH(—NH2)—CH2—OH, —CH(—NH—CH3)—CH2—OH, —CH(—N(—CH3)2)—CH2—OH, or —SO3H;
m represents an integer from 5 to 15;
R2 represents —OH, —(CH2—)p—C(—NH2)?NH, CH2—CH2—(—O—CH2—CH2—)m—OH, —R5, —(CH2—)q—CO—OCH3, —(CH2—)q—CO—OCH2—CH3, —(CH2—)q—S—(CH2—)2—OH, —CS—CH3, —CS—CH2—CH3, —CS—CH2—CH2—CH3,
orR1 and R2 together represent a linear chain structure in order to build one of the following ring structures including the central sulphur atom of Formula (I):

R5 represents —CH2—CH3, —CH2—CH2—CH3, or —CH2—CH2—CH2—CH3;
R6, R7, R8, R9 represent independently of each other —H, —NH2, —SH, —OH, CH3, —CH2—CH3, —COOH, or —SO3H;
or salts, tautomeric forms, betaine structures thereof,
and wherein general Formula (II) is defined as:

wherein
?X represents ?O, or a free electron pair;
R3 represents —R5, —CH?CH2, —CH2—CH?CH2, —CH?CH—CH3, CH2—CH2—CH?CH2, —CH2—CH?CH—CH3, —CH?CH—CH2—CH3, —C?CH, —CH2—C?CH, —C?C—CH3, —CH2—CH2—C?CH, —CH2—C?C—CH3, —C?C—CH2—CH3, —C(—NH2)?NH,

R4 represents —R5, —OR5, —(CH2—)r—CH(—NH2)—COOH, —(CH2—)r—CH(—NH—CH3)—COOH, —(CH2—)r—CH(—N(—CH3)2)—COOH, —(CH2—)r—CH(—NH2)—CO—OCH3, or —(CH2—)r—CH(—NH2)—CO—OCH2—CH3;
r is an integer from 0 to 4;
R3 and R4 together represent a linear chain structure in order to build one of the following ring structures including the central sulphur atom of Formula (II):

R10 represents —H, —CH3, —CH2—CH3, —CH2—CH2—SO3H;
or salts, tautomeric forms, betaine structures thereof,
wherein the electroplating bath is free of chloride ions; and
wherein in the mixture of coloring agents, the coloring agent of Formula (I) comprises 3-carbamimidoylsulfanyl-propionic acid, or salts, tautomeric forms, betaine structures thereof.
US Pat. No. 9,960,051

ACTIVATION METHOD FOR SILICON SUBSTRATES COMPRISING AT LEAST TWO AROMATIC ACIDS

Atotech Deutschland GmbH,...

1. An activation composition for the activation of silicon substrates, wherein the activation composition is an aqueous solution comprising:a) source of palladium ions;
b) a source of fluoride ions; and
c) at least two aromatic acids selected from the group consisting of aromatic carboxylic acids, aromatic sulphonic acids, aromatic sulphinic acids, aromatic phosphonic acids and aromatic phosphinic acids.

US Pat. No. 10,477,700

METHOD FOR MANUFACTURING A PRINTED CIRCUIT BOARD

Atotech Deutschland GmbH,...

1. A method for manufacturing a printed circuit board, the method comprising in this order the steps:(i) providing a non-conductive substrate having on at least one surface
a copper circuitry with a copper surface, wherein the copper surface is
chemically treated by (a) an oxidation and subsequent reduction reaction and/or (b) an organic compound attached to the copper surface,
a permanent, non-conductive, not fully polymerized cover layer covering at least partially said copper surface,
(ii) thermally treating the substrate with the permanent, non-conductive, not fully polymerized cover layer at a temperature in the range from 140° C. to 250° C. in an atmosphere, which contains molecular oxygen in an amount of 100000 ppm or less, based on the total volume of the atmosphere, such that a substrate with a permanent, non-conductive cover layer is obtained, the cover layer being more polymerized compared to step (i),
with the proviso:
that step (ii) is carried out after step (i) but before any metal or metal alloy is deposited onto the permanent, non-conductive, not fully polymerized cover layer, and
that in step (ii) the permanent, non-conductive, not fully polymerized cover layer is fully polymerized in solely one single thermal treating step, if the cover layer is a solder mask.

US Pat. No. 10,487,404

ADHESION PROMOTING PROCESS FOR METALLISATION OF SUBSTRATE SURFACES

Atotech Deutschland GmbH,...

1. Wet chemical method for plating a metal onto glass comprising the steps of:i. depositing on at least a portion of a surface of the glass a layer of a metal oxide compound selected from the group consisting of zinc oxides, titanium oxides, zirconium oxides, aluminum oxides, silicon oxides, tin oxides, and mixtures of the aforementioned, wherein
the glass surface has an average surface roughness in a range from 0.1 to 100 nm, and
depositing the layer of metal oxide compound comprises
ia. contacting the glass with a solution comprising a metal oxide precursor compound suitable to form the metal oxide compound upon heating and thereafter
ib. heating the glass at a temperature in a range from 100° C. to 300° C. and thereby forming the metal oxide compound from the metal oxide precursor compound; and thereafter
ii. heating the glass at a temperature in a range from more than 400° C. to 600° C. and thereby forming an adhesive layer with a thickness of 5 nm to 10 nm of the metal oxide compound on at least a portion of the glass surface; and thereafter
iii. metal plating at least the glass surface bearing the adhesive layer of the metal oxide compound by applying a wet-chemical plating method and thereafter;
iv. heating for 5 to 120 minutes the metal plated layer to a maximum temperature of between 150 and 500° C.

US Pat. No. 10,249,572

METHOD FOR ELECTROMAGNETIC SHIELDING AND THERMAL MANAGEMENT OF ACTIVE COMPONENTS

Atotech Deutschland GmbH,...

1. Method for forming a metal layer for electromagnetic shielding and thermal management of active components, comprising the following steps(i) providing at least one active component, said active component having a front side comprising at least one chip encased by a layer of molding compound, a back side and side walls;
(ii) forming on the back side a protective layer selected from a layer formed by lamination of an adhesive tape, a UV peelable tape and a layer of temporary ink;
(iii) forming on the front side and optionally on the side walls an adhesion promotion layer;
(iv) forming at least one metal layer on the adhesion promotion layer or
forming at least one metal layer on the adhesion promotion layer by wet chemical metal plating processes,
(v) heating of the at least one metal plated layer to a temperature of between 100° C. and 300° C.,
wherein the protective layer is removed after step (iv) or (v).

US Pat. No. 10,266,957

CHROME-PLATED PART AND MANUFACTURING METHOD OF THE SAME

NISSAN MOTOR CO., LTD., ...

1. A chrome-plated part, comprising:a substrate;
a bright nickel plating layer formed over the substrate;
a noble potential nickel plating layer formed on the bright nickel plating layer, wherein an electric potential difference between the bright nickel plating layer and the noble potential nickel plating layer is within a range from 78 mV to 150 mV, and the electric potential of the bright nickel plating layer is a base potential with respect to the noble potential nickel plating layer; and
a trivalent chrome plating layer formed on the noble potential nickel plating layer, containing 0.5 at % or more of iron, and having at least any one of a microporous structure or a microcrack structure,
wherein the trivalent chrome plating layer has a microporous density of 180,000/cm2 or more,
wherein the bright nickel plating layer is manufactured with a first brightening agent and a second brightening agent,
wherein the first brightening agent comprises 1,5-sodium naphthalene disulfonate, 1,3,6-sodium naphthalene trisulfonate, saccharin, or paratoluene sulfonamide, and
wherein the second brightening agent comprises formaldehyde, 1,4-butynediol, propargyl alcohol, ethylene cyanohydrin, coumarin, thiourea, or sodium allylsulfonate.

US Pat. No. 10,260,161

SUBSTRATE HOLDER RECEPTION APPARATUS

Atotech Deutschland GmbH,...

1. Substrate holder reception apparatus for clamping a substrate holder in a substrate holder clamping direction (SHCD) in a predetermined position of the substrate holder and releasing the substrate holder characterized in thatthe substrate holder reception apparatus comprises a substrate holder clamping device configured to receive the substrate holder; wherein the substrate holder clamping device comprises at least one substrate holder connection device for mechanical aligning and electrically contacting of the substrate holder and at least one substrate holder clamping arm, wherein the at least one substrate holder connection device, which is arranged at the end of at least one substrate holder clamping arm, comprises a separate substrate holder alignment device for aligning the at least one substrate holder with the substrate holder connection device in an alignment direction, and at least one separate substrate holder contact device for electrically contacting the substrate holder; wherein the substrate holder reception apparatus is configured to first align the substrate holder and to afterwards bring the at least one substrate holder contact device into contact with the substrate holder, in the clamping process; wherein when the substrate holder reception apparatus does not clamp the substrate holder, the at least one substrate holder alignment device protrudes further towards a predetermined position of the substrate holder than the at least one substrate holder contact device.
US Pat. No. 10,456,813

NON-AQUEOUS STRIPPING COMPOSITION AND A METHOD OF STRIPPING AN ORGANIC COATING FROM A SUBSTRATE

Atotech Deutschland GmbH,...

1. A non-aqueous stripping composition, comprising:A—at least one high-boiling solvent at a concentration from 70% by weight to 95% by weight selected from the group, consisting of alcohols having general chemical formula R—OH, wherein R is a C4-C30 hydrocarbon group, wherein the high-boiling solvent has a boiling point of at least 100° C.;
B—at least one high-boiling co-solvent at a concentration from 2% by weight to 20% by weight selected from the group, consisting of high-boiling glycols, glycol ethers and amine compounds, wherein the high-boiling co-solvent has a boiling point of at least 100° C.; and
C—at least one pH-active agent at a concentration from 0.01% by weight to 5% by weight selected from the group, consisting of acid compounds or selected from the group, consisting of hydroxide compounds.

US Pat. No. 10,377,947

COMPOSITION AND PROCESS FOR METALLIZING NONCONDUCTIVE PLASTIC SURFACES

Atotech Deutschland GmbH,...

1. Process for etching electrically nonconductive plastic surfaces of articles, comprising the process step of:A) treating the plastic surface with at least one etching solution for treating nonconductive plastic surfaces, the etching solution comprising
(i) at least one acid,
(ii) at least one permanganate salt selected from alkali metal permanganates and earth alkali metal permanganates, and
(iii) at least one source for a metal ion, wherein the metal of the metal ion is selected from titanium, zirconium, niobium, molybdenum, ruthenium, rhodium, nickel, copper, silver, zinc and cadmium,
characterized in that the molar ratio of permanganate ions according to (ii) to metal ions according to (iii) ranges from 8.75:1 to 40:1.

US Pat. No. 10,385,458

PLATING BATH COMPOSITION AND METHOD FOR ELECTROLESS PLATING OF PALLADIUM

Atotech Deutschland GmbH,...

1. An aqueous plating bath composition for electroless deposition of palladium, comprising(i) at least one source for palladium ions,
(ii) at least one reducing agent for palladium ions, and
(iii) at least one aromatic compound according to Formula (I)

wherein R1 is selected from the group consisting of —H, —CH3, and —CH2—CH3; and
wherein R4 is selected from the group consisting of a substituted, linear C1 to C8 alkyl group; unsubstituted or substituted, branched C3 to C8 alkyl group; and an unsubstituted or substituted carbonyl group; and
wherein R2, R3, R5, and R6 are selected independently from each other from the group consisting of —H; unsubstituted or substituted, linear C1 to C20 alkyl group; unsubstituted or substituted, branched C3 to C20 alkyl group; —OH; —O—CH3; —O—CH2—CH3; and —CH3, and
wherein the unsubstituted or substituted carbonyl group of R4 is selected from moieties according to —(CR7R8)n-CO—(CR9R10)m-R11; wherein R7, R8, R9, R10 are selected independently of each other from —H, —CH3, —CH2—CH3, —OH, —O—CH3, —O—CH2—CH3;
wherein R11 is selected from —CH3, —CH2—CH3, —O—CH3, —O—CH2—CH3, an unsubstituted or substituted phenyl group and an unsubstituted or substituted naphthyl group; and
wherein n, m are integers selected independently of each other from 0, 1 and 2, and
wherein the at least one aromatic compound according to Formula (I) has a concentration ranging from 0.01 to 50 mg/l.

US Pat. No. 10,407,788

METHOD FOR GALVANIC METAL DEPOSITION

Atotech Deutschland GmbH,...

1. Method for galvanic metal deposition of a substrate using an anode and an electrolyte, wherein from each of a plurality of electrolyte nozzles a locally confined electrolyte stream is directed towards a part of a substrate surface which is to be treated, wherein a relative movement is carried out between the substrate and the electrolyte stream during deposition, whereina first movement is carried out along a first path,
wherein at least along a part of the first path a second movement is carried out along a second path, and
wherein the first and the second movement each are relative movements between the electrolyte stream and the substrate,
wherein the first movement is non-continuous, wherein the second movement is carried out when the first movement is stopped,
wherein the first path comprises stop points (SP, SP1 to SP9) at which the first movement is stopped and then, at the stop points (SP, SP1 to SP9), the second movement is carried out, wherein the stop points (SP, SP1 to SP9) are arranged in a geometrical pattern, and
wherein the stop points (SP, SP1 to SP9) are arranged in rows and columns, such that the geometrical pattern is an array with rows and columns.

US Pat. No. 10,501,860

METHOD AND APPARATUS FOR ELECTROPLATING A METAL ONTO A SUBSTRATE

Atotech Deutschland GmbH,...

1. A method for electroplating a metal onto a substrate (P), wherein said substrate (P) is a flat substrate having opposing first and second substrate surfaces (P1, P2), said method comprising:(a) providing said substrate (P), an electroplating apparatus (100, 200) comprising at least one counter electrode (120, 130; 220, 230), and an electroplating liquid (L);
(b) bringing said substrate (P) with said opposing first and second substrate surfaces (P1, P2) and said at least one counter electrode (120, 130; 220, 230) into contact with said electroplating liquid (L);
(c) electrically polarizing said first and second substrate surfaces (P1, P2) of said substrate (P) to effect metal deposition onto said first and second substrate surfaces (P1, P2) by feeding at least one first forward-reverse pulse current sequence each one being composed of successive first forward-reverse pulse periods to said first substrate surface (P1) and at least one second forward-reverse pulse current sequence each one being composed of successive second forward-reverse pulse periods to said second substrate surface (P2);
(d) each one of said at least one first forward-reverse pulse current sequence at least comprising, in each one of first consecutive forward-reverse pulse periods, a first forward pulse generating a first cathodic current during a first forward pulse duration (tf1) at said first substrate surface (P1), said first forward pulse having a first forward pulse peak current (if1), and a first reverse pulse generating a first anodic current during a first reverse pulse duration (tr1) at said first substrate surface (P1), said first reverse pulse having a first reverse pulse peak current (ir1); and
each one of said at least one second forward-reverse pulse current sequence at least comprising, in each one of consecutive second forward-reverse pulse periods, a second forward pulse generating a second cathodic current during a second forward pulse duration (tf2) at the second substrate surface (P2), said second forward pulse having a second forward pulse peak current (if2), and a second reverse pulse generating a second anodic current during a second reverse pulse duration (tr2) at the second substrate surface, said second reverse pulse having a second reverse pulse peak current (ir2);
(e) wherein said first and second forward pulses are further superposed with a respective first or second superposing cathodic pulse having a respective first or second superposing cathodic pulse duration (tc1, tc2) which is shorter than said respective first or second forward pulse duration (tf1, tf2); and
wherein a phase shift ?r, between said first reverse pulse of said at least one first forward-reverse current sequence and said second superposing cathodic pulse of said at least one second forward-reverse current sequence is set to 0°±30°.

US Pat. No. 10,407,793

SUBSTRATE HOLDER FOR VERTICAL GALVANIC METAL DEPOSITION

Atotech Deutschland GmbH,...

1. Substrate holder for vertical galvanic metal deposition on a substrate to be treated comprisinga first substrate holder part and a second substrate holder part, wherein both substrate holder parts comprise an inner metal comprising part and an outer non-metallic part characterized in that the substrate holder further comprises
i) At least one hanging element in each substrate holder part for mechanically connecting the substrate holder to a treatment container;
ii) At least one first sealing element in each substrate holder part arranged between the substrate to be treated and the respective substrate holder part;
iii) At least one second sealing element in each substrate holder part arranged between the inner metal comprising part of each substrate holder and the outer non-metallic part of each substrate holder;
iv) At least one fastening system for detachably fastening both substrate holder parts to each other for holding the substrate to be treated, wherein the fastening system comprises a first recess element in the first substrate holder part and a first fastening element in the second substrate holder part, wherein said first fastening element is in conjunction with the first recess element for fastening both substrate holder parts;
v) At least one first contact element in each substrate holder part for forwarding current from an outer source through the hanging element to at least one second contact element; and
vi) wherein the at least one second contact element in each substrate holder part is configured for forwarding current from the at least one first contact element to the substrate to be treated;
vii) wherein the fastening system further comprises
at least a plurality of second fastening elements, and third, fourth and fifth fastening elements, and a plurality of third recess elements in the first substrate holder part;
at least a plurality of sixth fastening elements, and seventh, eighth, ninth, tenth, eleventh and twelfth fastening elements, and a plurality of fourth recess elements in the second substrate holder part;
wherein the plurality of second fastening elements of the first substrate holder part are in conjunction with the plurality of fourth recess elements of the second substrate holder part;
wherein the plurality of sixth fastening elements of the second substrate holder part are in conjunction with the plurality of third recess elements of the first substrate holder part;
wherein the plurality of second and sixth fastening elements are permanently fixed elements, which are unmovable in their position;
wherein the third, fourth, and fifth fastening elements are part of a metallic chain;
wherein the fifth fastening element is a circular or rectangular metallic element running around the site of the first substrate holder part, which is adapted to receive the substrate to be treated;
wherein the third and the fourth fastening elements are two separated metallic elements running both linearly from said fifth fastening element to the upper side of the first substrate holder part;
wherein the third and the fourth fastening element are each interconnected to the fifth circular or rectangular metallic element;
wherein all the metallic elements in the first substrate holder part comprises a plurality of consecutive oblong holes, which comprise the plurality of third recess elements;
wherein the seventh, eighth, ninth and twelfth fastening element are part of a metallic chain;
wherein the ninth fastening element is a circular or rectangular metallic element running around the site of the second substrate holder part, which is adapted to receive the substrate to be treated;
wherein the eighth and seventh fastening elements are two separated metallic elements running both linearly from said ninth fastening element to the upper side of the second substrate holder part;
wherein the seventh and the eighth fastening element are each interconnected to the ninth circular or rectangular metallic element by the twelfth fastening element;
wherein all the metallic elements in the second substrate holder part comprises a plurality of consecutive oblong holes, which comprise the plurality of fourth recess elements; and
wherein the tenth and the eleventh fastening elements open and close the substrate holder by pushing or pressing the respective fastening element.

US Pat. No. 10,538,850

ELECTROLYTIC COPPER PLATING BATH COMPOSITIONS AND A METHOD FOR THEIR USE

Atotech Deutschland GmbH,...

1. An aqueous acidic copper plating bath for deposition of copper or copper alloys comprising at least one source of copper ions, at least one acid, and at least one guanidine compound which contains at least one unit according to formula (I)?A-D?a  (I)
wherein a is an integer ranging from 1 to 40 and A represents a unit derived from a monomer according to the following formulae (A1) and/or (A2)

wherein
Y and Y? are each individually selected from the group consisting of CH2, O and S;
R1 is an organic residue selected from the group consisting of hydrogen, alkyl, aryl and alkaryl;
R2 is an organic residue selected from the group consisting of hydrogen, alkyl, aryl and alkaryl;
R3, R4, R5 and R6 are each organic residues independently from each other selected from the group consisting of hydrogen, alkyl, aryl and alkaryl;
b and b? are integers each individually and independently from each other ranging from 0 to 6;
c and c? are integers each individually and independently from each other ranging from 1 to 6;
d and d? are integers each individually and independently from each other ranging from 0 to 6;
e and e? are integers each individually and independently from each other ranging from 0 to 6;
D is a divalent residue and is selected from the group consisting of
—Z1—[Z2—O]g—Z3—, —[Z4—O]h—Z5—, and —CH2—CH(OH)—Z6—[Z7—O]i—Z8—CH(OH)—CH2—;
wherein
Z1 is an alkylene group with 1 to 6 carbon atoms;
Z2 is selected from the group consisting of alkylene group with 1 to 6 carbon atoms, aryl-substituted alkylene groups whereby the alkylene group comprises 1 to 6 carbon atoms and mixtures of the aforementioned;
Z3 is an alkylene group with 1 to 3 carbon atoms;
Z4 is selected from the group consisting of alkylene group with 1 to 6 carbon atoms, aryl-substituted alkylene groups whereby the alkylene group comprises 1 to 6 carbon atoms and mixtures of the aforementioned;
Z5 is an alkylene group with 1 to 3 carbon atoms;
Z6 is an alkylene group with 1 to 6 carbon atoms;
Z7 is selected from the group consisting of alkylene group with 1 to 6 carbon atoms, aryl-substituted alkylene groups whereby the alkylene group comprises 1 to 6 carbon atoms and mixtures of the aforementioned;
Z8 is an alkylene group with 1 to 3 carbon atoms;
g is an integer ranging from 1 to 100;
h is an integer ranging from 1 to 100;
i is an integer ranging from 1 to 100; and
wherein the individual units A are selected independently from each other, and the individual units D are selected independently from each other and the guanidine compound is linear and/or cross-linked, and
wherein the bath is free of intentionally added zinc ions.

US Pat. No. 10,604,861

DEVICE FOR VERTICAL GALVANIC METAL DEPOSITION ON A SUBSTRATE

Atotech Deutschland GmbH,...

1. Device for vertical galvanic metal deposition on a substrate, wherein the device comprises at least a first device element and a second device element, which are arranged in a vertical manner parallel to each other; wherein the first device element comprises at least a first anode element having a plurality of through-going conduits and at least a first carrier element having a plurality of through-going conduits; wherein said at least first anode element and said at least first carrier element are firmly connected to each other; wherein the second device element comprises at least a first substrate holder which is adapted to receive at least a first substrate to be treated, wherein said at least first substrate holder is at least partially surrounding the at least first substrate to be treated along its outer frame after receiving it, characterized in thatthe at least first device element further comprises a plurality of plugs, wherein each plug comprises at least a through-going channel, and wherein each plug is arranged in such a way that each plug is running from a backside of the at least first carrier element through one of said plurality of through-going conduits of the at least first carrier element and further through a respective in front lying through-going conduit of the plurality of through-going conduits of the at least first anode element; and wherein all of the plurality of plugs are detachably connected to the at least first device element, wherein a selected one or more of the plurality of plugs may be replaced with different plugs by a detachable connection.

US Pat. No. 10,494,732

METHOD FOR MONITORING THE TOTAL AMOUNT OF BRIGHTENERS IN AN ACIDIC COPPER/COPPER ALLOY PLATING BATH AND CONTROLLED PROCESS FOR PLATING

Atotech Deutschland GmbH,...

1. A method for monitoring the total amount of brighteners in an acidic copper/copper alloy plating bath during a copper/copper alloy plating process, the method comprising the steps:(a) providing a plating bath sample from said plating bath, the plating bath comprising
(a-1) one or more than one brightener selected from the group consisting of

 wherein
n and m are independently 1, 2, 3, 4 or 5, and
p is independently 0, 1 or 2,
(a-2) copper ions, and
(a-3) chloride ions,
(b) adding to the plating bath sample
(b-1) one or more than one redox active compound, which is not a compound of (a-2), wherein said redox active compound
exhibits a standard potential E0 in the range of from ?0.80 V to +1.45 V, and
is selected from the group consisting of metal ions, metal oxide ions, iodide ions, and molecular oxygen,
 such that a measuring sample results from steps (a) and (b),
(c) in a measuring unit comprising a working electrode, the working electrode being contacted with the measuring sample
measuring a voltammetric or a chronoamperometric response of the working electrode by polarizing the electrode such that electrochemical current data are obtained,
(d) optionally processing the electrochemical current data obtained in step (c) in order to obtain processed electrochemical current data,
(e) comparing the electrochemical current data obtained in step (c) or the processed electrochemical current data obtained in step (d) with reference electrochemical current data or processed reference electrochemical current data.

US Pat. No. 10,513,780

PLATING BATH COMPOSITION AND METHOD FOR ELECTROLESS PLATING OF PALLADIUM

Atotech Deutschland GmbH,...

1. An aqueous plating bath composition for electroless deposition of palladium, comprising(i) at least one source for palladium ions,
(ii) at least one reducing agent for palladium ions, and
(iii) at least one unsaturated compound selected from compounds according to Formulae (I) and (II), salts thereof, and mixtures of the aforementioned

wherein R1, R3, R5 are selected independently of each other from the group consisting of —H; unsubstituted or substituted, linear C1 to C20 alkyl group; unsubstituted or substituted, branched C3 to C20 alkyl group; and unsubstituted or substituted aryl groups; and
wherein R2, R4 are selected independently of each other from the group consisting of —H; unsubstituted or substituted, linear C1 to C20 alkyl group; unsubstituted or substituted, branched C3 to C20 alkyl group; unsubstituted or substituted aryl groups; and —(CH(R10))n-X—(C(R8)(R9))m-R7; and wherein R2 is not —H if R4 is —H or R4 is not —H if R2 is —H; and
wherein R6 is selected from the group consisting of unsubstituted or substituted, linear C1 to C20 alkyl group; unsubstituted or substituted, branched C3 to C20 alkyl group; unsubstituted or substituted aryl groups; and —(CH(R10))n-X—(C(R8)(R9))m-R7; and
wherein X is selected from the group consisting of O, NH, and NCH3; R7 is selected from the group consisting of hydroxyl, amino, sulfonic acid, carboxyl; R8, R9, R10 are selected independently of each other from the group consisting of hydrogen and C1 to C4 alkyl group; n is an integer ranging from 1 to 6; and m is an integer ranging from 1 to 8, and
wherein substituents of the substituted, linear C1 to C20 alkyl group; the substituted, branched C3 to C20 alkyl group; or the substituted aryl groups are selected independently of each other from the group consisting of hydroxyl, aldehyde, sulfonic acid, mercapto, methoxy, ethoxy, halogen, allyl, vinyl, phenyl, pyridyl and naphthyl groups,
wherein the amino group according to R7 is selected from —NH(R11), —N(R11)(R12), —N+(R11)(R12)(R13), wherein R11, R12, R13 are selected independently of each other from methyl, ethyl, n-propyl and iso-propyl, and
wherein the aqueous plating bath composition further comprises at least one complexinq agent for palladium ions selected from the group consisting of primary amines, secondary amines and tertiary amines.

US Pat. No. 10,633,755

COPPER PLATING BATH COMPOSITION AND METHOD FOR DEPOSITION OF COPPER

Atotech Deutschland GmbH,...

1. An aqueous acidic copper electroplating bath which comprises at least one source of copper ions and at least one acid characterized in that the bath further comprises at least one additive obtained by a reaction of at least one aminoglycidyl compound and at least one compound selected from ammonia and amine compounds wherein the amine compounds comprise at least one primary or secondary amino group with the proviso that the aminoglycidyl compound and/or the amine compound contains at least one polyoxyalkylene residue.

US Pat. No. 10,767,275

AQUEOUS COPPER PLATING BATHS AND A METHOD FOR DEPOSITION OF COPPER OR COPPER ALLOY ONTO A SUBSTRATE

Atotech Deutschland GmbH,...

1. An aqueous copper plating bath for electrolytic copper or copper alloy deposition comprisingat least one source of copper ions;
at least one acid; and
at least one bisurea derivative comprising a bisurea building block according to formula (I)
wherein A represents a unit derived from a diurea compound of the following formula (A1)whereinX1 and X2 are divalent residues independently from each other selected from the following group consisting ofwherein R1 and R2 are monovalent residues each selected independently from the group consisting of hydrogen, alkyl and polyoxyalkylene;Y is selected from CH2, O and S;c is an integer ranging from 1 to 6; c? is an integer ranging from 1 to 6;b is an integer ranging from 1 to 5;b? is an integer ranging from 1 to 5;Z is a divalent bridging moiety which is selected from the group consisting of alkylene, arylene and alkylene oxide compound whereby said alkylene oxide compound is represented by the following formula—(CH2)d—[CH(R3)—CH2—O]e—(CH2)f—(CH(CH3))f?—,wherein d is an integer ranging from 0 to 3;e is an integer ranging from 1 to 100; andf is an integer ranging from 1 to 3;f? is 0 or 1;each R3 is independently from each other selected from the group consisting of alkyl, aryl and hydrogen;a is an integer and ranges from 1 to 100; andD is a divalent residue and is selected from the group consisting of—CH2—CH(OH)—CH2—,—CH2—CH(SH)—CH2—,—(CH2)g—[CH(R4)—CH2—O]h—(CH2)i— and—CH2—CH(OH)—(CH2)j—[CH(R5)—CH2—O]k—(CH2)l—CH(OH)—CH2—wherein g is an integer ranging from 0 to 4;h is an integer ranging from 1 to 100;i is an integer ranging from 1 to 4;each R4 is independently from each other selected from the group consisting of alkyl, aryl and hydrogen;j is an integer ranging from 1 to 4;k is an integer ranging from 1 to 100;l is an integer ranging from 1 to 4;each R5 is independently from each other selected from the group consisting of alkyl, aryl and hydrogenand if a is 2 or greater each A and each D are selected independently from each otherand wherein the aqueous copper plating bath is free of added zinc ions.

US Pat. No. 10,753,007

PROCESS FOR INDIUM OR INDIUM ALLOY DEPOSITION AND ARTICLE

Atotech Deutschland GmbH,...

1. A process for deposition of indium or indium alloys comprising the stepsi. providing a substrate having at least one metal or metal alloy surface, each said at least one metal or metal alloy surface consisting of one or more than one metal selected from the group consisting of nickel, cobalt, ruthenium or alloys of any of the aforementioned;
ii. depositing a first indium or indium alloy layer on at least one portion of said surface whereby a composed phase layer is formed of a part of the metal or metal alloy surface and a part of the first indium or indium alloy layer;
iii. removing wholly the part of the first indium or indium alloy layer which has not been formed into the composed phase layer, wherein the composed phase layer is not substantially removed in step iii. of the process, wherein more than 90 wt.-% of the composed phase layer remains after step iii.;
iv. depositing a second indium or indium alloy layer on the at least one portion of the surface obtained in step iii.

US Pat. No. 10,619,251

ETCHING SOLUTION FOR COPPER AND COPPER ALLOY SURFACES

Atotech Deutschland GmbH,...

1. An aqueous etching solution for copper and copper alloy surfaces comprising at least one acid, at least one oxidising agent suitable to oxidise copper, at least one source of halide ions characterised in that the solution further comprises at least one polyamide containing at least one polymeric moiety according to formula (I)wherein each a is independently from each other selected from 2 and 3; each b is an integer independently from each other ranging from 5 to 10000; each R1 is a monovalent residue independently from each other selected from the group consisting of substituted or unsubstituted C1-C8-alkyl groups.

US Pat. No. 10,882,842

PYRIDINIUM COMPOUNDS, A SYNTHESIS METHOD THEREFOR, METAL OR METAL ALLOY PLATING BATHS CONTAINING SAID PYRIDINIUM COMPOUNDS AND A METHOD FOR USE OF SAID METAL OR METAL ALLOY PLATING BATHS

Atotech Deutschland GmbH,...

1. A compound comprising a building block according to formula (I)wherein each A represents a unit independently selected from the following formulae (A1) and (A2)whereinRa1, Ra2, Ra3 and Ra5 are each selected independently from the group consisting of C1-C12-alkanediyl and —(CH2)c—[CH(Ra6)—CH2—O]d—(CH2)e— wherein c is an integer ranging from 0 to 3; d is an integer ranging from 1 to 100; e is an integer ranging from 1 to 3;
each Ra6 is independently from each other selected from the group consisting of hydrogen, alkyl, aryl and aralkyl;
each Ra4 is independently selected from the group consisting of alkanediyl, arenediyl and —(CH2)f—[CH(Ra7)—CH2—O]g—(CH2)h—, wherein f is an integer ranging from 0 to 3; g is an integer ranging from 1 to 100; h is an integer ranging from 1 to 3; each Ra7 is independently from each other selected from the group consisting of hydrogen, alkyl, aryl and aralkyl;
each X1 and X2 are independently selected from the group consisting of
wherein Z is selected from —CH2—, O, S; z and z? are integers independently ranging from 1 to 6, each Ra8 and Ra9 are independently selected from the group consisting of hydrogen, alkyl, aryl, aralkyl and —CH2—CH2—(OCH2CH2)y—OH wherein y is an integer from 1 to 4;each Y1, Y2 and Y3 are independently selected from the group consisting of O and) N(Ra10) wherein each Ra10 is independently selected from the group consisting of hydrogen, alkyl, aryl and aralkyl;
a is an integer ranging from 1 to 40; and
each D is independently selected from the group consisting of —CH2—CH(OH)—CH2—, —CH2—CH(SH)—CH2—, —(CH2)i—[CH(Rd1)—CH2—O]j—(CH2)k— and —CH2—CH(OH)—(CH2)l—[CH(Rd2)—CH2—O]m—(CH2)n—CH(OH)—CH2—
wherein i is an integer ranging from 0 to 3; j is an integer ranging from 1 to 100; k is an integer ranging from 1 to 3; each Rd1 is independently from each other selected from the group consisting of hydrogen, alkyl, aryl and aralkyl; l is an integer ranging from 1 to 3; m is an integer ranging from 1 to 100; n is an integer ranging from 1 to 3; each Rd2 is independently from each other selected from the group consisting of hydrogen, alkyl, aryl and aralkyl.

US Pat. No. 10,832,929

WAFER-LIKE SUBSTRATE PROCESSING METHOD AND APPARATUS

Atotech Deutschland GmbH,...

1. A wafer substrate processing apparatus comprising a loading device, an alignment device, a connecting device, a treatment device, a post-treatment device, a storing device, and a robot arm having a touching gripper and a touchless gripper, both the touching gripper and the touchless gripper are capable of transporting a wafer substrate, wherein:the touchless gripper or the touching gripper are capable of transporting the wafer substrate from the loading device to the alignment device, which is capable of aligning the wafer substrate;
the touching gripper is capable of transporting an aligned wafer substrate from the alignment device to the connecting device, which is capable of fastening the aligned wafer substrate in a substrate holder and unfastening a treated wafer substrate from the substrate holder;
the touching gripper is capable of transporting the substrate holder from the connecting device to the treatment device, which is capable of treating the wafer substrate, and back to the connecting device;
the touching gripper is capable of transporting the treated wafer substrate from the connecting device to the post-treatment device; and
the touchless gripper is capable of transporting the post-treated wafer substrate from the post-treatment device to the storing device or back to the loading device.

US Pat. No. 10,774,437

METHOD AND APPARATUS FOR ELECTROLYTICALLY DEPOSITING A DEPOSITION METAL ON A WORKPIECE

Atotech Deutschland GmbH,...

1. An apparatus for electrolytically depositing a deposition metal on a workpiece, comprising:(I) in a first region of the apparatus:
(a) an electrolytic depositing apparatus, which has at least one anode and at least one current feeding device, each current feeding device having one electrical contact element for making electrical contact with the workpiece, each electrical contact element having at least one contact area, wherein the at least one anode and the at least one current feeding device can be brought into contact with a deposition electrolyte; and
(b) a device for electric current generation;
(II) in a second region of the apparatus:
(a) a stripping apparatus for removing deposition metal from the at least one current feeding device, wherein the stripping apparatus comprises a stripping cathode; and
(b) a current source which is designed so as to polarize the stripping cathode cathodically vis-à-vis the at least one current feeding device;
(III) in a third region of the apparatus:
(a) a contact coating apparatus for depositing the deposition metal on the respective contact area on the electrical contact elements, in which contact coating apparatus the at least one electrical contact element is not in contact with the workpiece, wherein the contact coating apparatus comprises a contact coating anode; and
(b) a current source which is designed so as to polarize the electrical contact elements cathodically vis-à-vis the contact coating anode;
wherein the at least one current feeding device is a contact clamp having said contact areas; wherein the contact clamp has two electrical contact elements, each electrical contact element having a said contact area, and
wherein in the second region and in the third region, contact areas of the clamp remain in the position spaced apart from one another.

US Pat. No. 11,032,914

METHOD OF FORMING A SOLDERABLE SOLDER DEPOSIT ON A CONTACT PAD

Atotech Deutschland GmbH,...

1. A method of forming a solderable solder deposit on a contact pad (B), comprising the steps of(i) providing an organic, non-conductive substrate (A) which exposes a first contact pad under a first opening in a first non-conductive resist layer (C), the first opening having a first maximum width, and at least a second contact pad under at least a second opening in the first non-conductive resist layer (C), the at least second opening having a second maximum width which is different from the first maximum width,
(ii) depositing a conductive layer (G) inside (G?) and outside (G?) the first opening and the at least second opening such that an activated surface results, thereby forming an activated first opening and an activated at least second opening,
(iii) electrolytically depositing nickel (D) or a nickel alloy (D) into the activated first opening and into the activated at least second opening such that a nickel or nickel alloy is deposited onto the activated surface,
(iv) electrolytically depositing tin (E) or a tin alloy (E) onto the nickel or nickel alloy deposited in step (iii),
with the proviso that the electrolytic deposition of steps (iii) or (iv) results in an entirely filled activated first opening and an entirely filled activated at least second opening,
wherein the entirely filled activated first opening and the entirely filled activated at least second opening are completely filled with said nickel or nickel alloy, or in the entirely filled activated first opening and the entirely filled activated at least second opening the total volume of nickel or nickel alloy is higher than the total volume of tin and tin alloy, based on the total volume of the entirely filled activated first opening and the entirely filled activated at least second opening, and
wherein the nickel or nickel alloy in step (iii) is deposited into the first opening and the at least second opening in a single step.

US Pat. No. 11,015,257

METHOD AND APPARATUS FOR ELECTROPLATING A METAL ONTO A SUBSTRATE

Atotech Deutschland GmbH,...

1. An apparatus for electroplating a metal onto a flat substrate having opposing first and second substrate surfaces, said apparatus comprising:(a) means for holding the substrate;
(b) at least one counter electrode;
(c) means for accommodating an electroplating liquid;
(d) means for electrically polarizing said substrate to effect metal deposition onto said first and second substrate surfaces;wherein said means for electrically polarizing said first and second substrate surfaces of said substrate is a rectifier which is programmed to feed at least one first forward-reverse pulse current sequence each one being composed of successive first forward-reverse pulse periods to said first substrate surface and at least one second forward-reverse pulse current sequence each one being composed of successive second forward-reverse pulse periods to said second substrate surface, wherein each one of said first forward-reverse pulse current sequence at least comprises, in each one of consecutive first forward-reverse pulse periods, a first forward pulse generating a first cathodic current during a first forward pulse duration at the first substrate surface, said first forward pulse having a first forward pulse peak current, and a first reverse pulse generating a first anodic current during a first reverse pulse duration at the first substrate surface, said first reverse pulse having a first reverse pulse peak current; andeach one of said second forward-reverse pulse current sequence at least comprising, in each one of consecutive second forward-reverse pulse periods, a second forward pulse generating a second cathodic current during a second forward pulse duration at the second substrate surface, said second forward pulse having a second forward pulse peak current, and a second reverse pulse generating a second anodic current during a second reverse pulse duration at the second substrate surface, said second reverse pulse having a second reverse pulse peak current;
wherein said first and second forward pulses are further superposed with a respective first or second superposing cathodic pulse having a respective first or second superposing cathodic pulse duration which is shorter than said respective first or second forward pulse duration; and
wherein a phase shift between said first reverse pulse of said at least one first forward-reverse current sequence and said second superposing cathodic pulse of said at least one second forward-reverse current sequence is set to 0°±30°.
US Pat. No. 10,961,634

METHOD FOR INCREASING CORROSION RESISTANCE OF A SUBSTRATE COMPRISING AN OUTERMOST CHROMIUM ALLOY LAYER

Atotech Deutschland GmbH,...

1. A method for increasing corrosion resistance of a substrate comprising an outermost chromium alloy layer, the method comprising the steps of:(i) providing the substrate comprising said outermost layer, the layer
having a color space defined by CIELAB with a lightness L* of 79 or more,
comprising oxygen and carbon, and
further comprising iron in a total amount of 0 atom-% to 1 atom-%, based on the total number of atoms in said outermost layer,
(ii) providing an aqueous, acidic passivation solution, the solution comprising:
trivalent chromium ions,
phosphate ions, and
one or more than one organic acid residue anion,
(iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost layer,
wherein
in step (i) the outermost chromium alloy layer is electrolytically deposited from an aqueous, acidic deposition composition, the composition comprising:
trivalent chromium ions,
at least one organic acid comprising an isothiureido moiety and/or salts thereof, and
chloride ions in a total amount of 0 wt-% to 0.1 wt-%, based on the total weight of the deposition composition.

US Pat. No. 10,920,322

METHOD FOR DIRECTLY DEPOSITING PALLADIUM ONTO A NON-ACTIVATED SURFACE OF A GALLIUM NITRIDE SEMICONDUCTOR

Atotech Deutschland GmbH,...

1. Method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, comprising in this order the steps:(i) providing a doped or non-doped gallium nitride semiconductor with a non-activated surface,
(ii) providing an aqueous, acidic palladium plating bath, comprising
(a) Pd2+ ions,
(b) one or more than one reducing agent suitable to reduce Pd2+ ions to metallic Pd0,
(c) one or more than one compound selected from the group consisting of compounds of formulae (I) and (II)

wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently H, alkyl, aryl, hetero aryl, NH2, SO3H, or OH, and
R9 is independently H, alkyl, aryl, or hetero aryl,
(iii) contacting the semiconductor with the plating bath such that metallic palladium or a palladium alloy is electrolessly deposited onto the non-activated surface of the semiconductor, the plating bath temperature being in the range of from 70° C. to 99° C.
US Pat. No. 10,900,140

METHOD FOR ELECTROLYTICALLY PASSIVATING AN OUTERMOST CHROMIUM OR OUTERMOST CHROMIUM ALLOY LAYER TO INCREASE CORROSION RESISTANCE THEREOF

Atotech Deutschland GmbH,...

1. A method for electrolytically passivating an outermost chromium or outermost chromium alloy layer to increase corrosion resistance thereof, the method comprising the steps of(i) providing a substrate comprising said outermost chromium or outermost chromium alloy layer,
(ii) providing or manufacturing an aqueous, acidic passivation solution, the solution comprising
trivalent chromium ions,
phosphate ions,
one or more than one organic acid residue anion, and
(iii) contacting the substrate with the passivation solution and passing an electrical current between the substrate as a cathode and an anode in the passivation solution such that a passivation layer is deposited onto the outermost chromium or outermost chromium alloy layer,
wherein
in the passivation solution said trivalent chromium ions are obtained by chemically reducing hexavalent chromium in the presence of phosphoric acid through at least one reducing agent selected from the group consisting of hydrogen peroxide and organic reducing agents,
with the proviso that during or after the chemical reducing the one or more than one organic acid residue anion is present for the first time in the passivation solution, and
wherein the chemical reducing is carried out and started in the presence of phosphoric acid and is started in the absence of the one or more than one organic acid residue anion, said one or more than one organic acid residue anion being present for the first time after the start of the chemical reducing.

US Pat. No. 10,867,895

LEAD-FRAME STRUCTURE, LEAD-FRAME, SURFACE MOUNT ELECTRONIC DEVICE AND METHODS OF PRODUCING SAME

Atotech Deutschland GmbH,...

1. A lead-frame structure having two faces and exposing a treatment layer comprising silver oxide on at least one of said two faces, wherein said lead-frame structure comprises at least two lead-frame entities each one having two faces and wherein said lead-frame structure is made of:(i) a lead-frame body structure made of copper and having two main sides;
(ii) at least one of said main sides being coated with a silver coating, so that said at least one of said main sides at least partially exposes an untreated silver surface; and
(iii) said untreated silver surface on said at least one of said main sides further comprising a treatment layer comprising silver oxide, wherein thickness of the treatment layer is less than thickness of the silver coating;characterized in that said at least one of said two faces of at least one of said at least two lead-frame entities either exclusively exposes said treatment layer comprising silver oxide orthat said at least one of said two faces of said at least one of said at least two lead-frame entities partially exposes said treatment layer comprising silver oxide and partially exposes said copper surface, wherein, on each one of said two faces of each one of said at least two lead-frame entities which partially exposes said treatment layer comprising silver oxide, the area of said copper surface is smaller than the area of said treatment layer comprising silver oxide;wherein said silver coating is at most 0.5 ?m thick.

US Pat. No. 10,793,962

AQUEOUS INDIUM OR INDIUM ALLOY PLATING BATH AND PROCESS FOR DEPOSITION OF INDIUM OR AN INDIUM ALLOY

Atotech Deutschland GmbH,...

1. A process for deposition of indium or an indium alloy comprising the steps of:i. providing a substrate (100) having at least one metal or metal alloy surface;
ii. contacting the at least one surface of said substrate (100) with an aqueous indium or indium alloy plating bath comprising:
a source of indium ions,
an acid,
a source of halide ions,
a surfactant according to formula (I)

wherein A is selected from branched or unbranched C10-C15-alkyl;
B is selected from the group consisting of hydrogen and alkyl;
m is an integer ranging from 5 to 25;
each R is independently from each other selected from hydrogen and methyl; and
a dihydroxybenzene derivative according to formula (II)

wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro;
n is an integer ranging from 1 to 4,
wherein, when the aqueous indium or indium alloy plating bath is an indium alloy plating bath, an alloying reducible metal is selected from the group consisting of aluminum, bismuth, copper, gold, lead, nickel, silver, tin, tungsten and zinc;
and thereby depositing an indium layer or indium alloy layer on at least a portion of the at least one surface, and
wherein
in step ii. the indium or indium alloy layer is a first indium or indium alloy layer (101),
in step ii. a composed phase (102) is formed, made of the metal or metal alloy of said surface (100a) and at least a part of the first indium or indium alloy layer (101),
wherein the process further comprises the steps:
iii. removing partially or wholly the part of the first indium or indium alloy layer which has not been converted into the composed phase (103); and
iv. depositing a second indium or indium alloy layer (104) on at least a portion of the surface obtained in step iii (102a).
US Pat. No. 10,745,568

SURFACE TREATMENT COMPOSITION

Atotech Deutschland GmbH,...

1. A process for treating of zirconium-pretreated metal-based substrate surfaces, comprising: i providing a zirconium-pretreated metal-based substrate; and ii. applying to surfaces of the substrate an acidic aqueous composition comprising: a. trivalent chromium ions; and b. hexafluorozirconate ions; characterized in that the sole source of the trivalent chromium ions is a trivalent chromium nitrate salt.

US Pat. No. 11,035,051

ACIDIC AQUEOUS COMPOSITION FOR ELECTROLYTIC COPPER PLATING

Atotech Deutschland GmbH,...

1. An acidic aqueous composition for electrolytic copper plating, the composition comprising:(i) copper (II) ions,
(ii) one or more than one compound of Formula (Ia):

wherein
R4 and R5 are independently selected from the group consisting of hydrogen, methyl, ethyl, linear C3 to C16 alkyl, branched C3 to C16 alkyl and a moiety of Formula (IIa):

R1, R2, R3 and R6 are independently selected from the group consisting of hydrogen, methyl and ethyl,
B1, B2, B3, D1, D2, and D3 are independently selected from the group consisting of O and NH,
A1, A2 and A3 independently denote a moiety selected from the group consisting of:
hydrogen, methyl, ethyl, linear C3 to C16 alkyl, branched C3 to C16 alkyl;
wherein R7 and R8 are independently selected from the group consisting of hydrogen, methyl, ethyl, linear C3 to C10 alkyl and branched C3 to C10 alkyl;
with the proviso that
at least one of A1, A2 and A3 is a moiety selected from the group consisting of:
andthe corresponding B1, B2, and B3 of the at least one of A1, A2 and A3 is O if the corresponding x, y, and z is 1,
a, b and c are independently 0, 1, 2 or 3,
s, x, y, and z are independently 0 or 1,
n independently is 1, 2 or 3,
o+p+q+t=5 to 300,
and
(iii) one or more further compounds, which are different from the compound of Formula (Ia), selected from the group consisting of one or more than one species of inorganic ions, one or more than one accelerator-brightener compound, one or more than one carrier-suppressor compound, one or more than one leveller compound, and one or more than one wetting agent, and
wherein the pH value of the composition is 3 or less.

US Pat. No. 10,982,343

PLATING COMPOSITIONS FOR ELECTROLYTIC COPPER DEPOSITION, ITS USE AND A METHOD FOR ELECTROLYTICALLY DEPOSITING A COPPER OR COPPER ALLOY LAYER ONTO AT LEAST ONE SURFACE OF A SUBSTRATE

Atotech Deutschland GmbH,...

1. A plating composition for electrolytic copper deposition, comprising copper ions, halide ions and at least one acid, characterized in thatthe plating composition further comprises:
(a) at least one benzothiazole compound represented by the following formula (BT):

wherein
RBT1 is selected from the group consisting of substituted and unsubstituted alkyl group, substituted and unsubstituted aryl group and substituted and unsubstituted alkaryl group;
RBT2 and RBT3 are independently substituted and unsubstituted alkyl groups;
each of RBT4, RBT5, RBT6 and RBT7 are independently selected from the group consisting of hydrogen, substituted and unsubstituted alkyl group, substituted and unsubstituted oxyalkyl group and

wherein RBT8 is selected from the group consisting of substituted and unsubstituted alkyl group, substituted and unsubstituted aryl group and substituted and unsubstituted alkaryl group;
each of RBT9, RBT10, RBT11 and RBT12 are independently selected from the group consisting of hydrogen, substituted and unsubstituted alkyl group, substituted and unsubstituted oxyalkyl group and sulfonic acid group;
(b) at least one phenazine dye; and
(c) at least one ethanediamine derivative represented by the following formula (ED):

wherein
RED1, RED2, RED3 and RED4 are independently selected from the group consisting of substituted and unsubstituted oligo(oxyalkanediyl) group; and substituted and unsubstituted poly(oxyalkanediyl) group, and
wherein the plating composition is free of intentionally added zinc ions.
US Pat. No. 10,975,474

PROCESS FOR DEPOSITING A METAL OR METAL ALLOY ON A SURFACE OF A SUBSTRATE INCLUDING ITS ACTIVATION

Atotech Deutschland GmbH,...

1. A process for depositing a metal or metal alloy on at least one surface of a substrate comprising the steps of(a) providing a substrate;
(b) treating the surface of said substrate with an activation solution comprising at least one source of metal ions selected from the group consisting of sources of palladium ions, sources of osmium ions, sources of iridium ions, sources of platinum ions, sources of copper ions, sources of gold ions and mixtures thereof such that at least one portion of said metal ions is being adsorbed on the surface of said substrate, wherein the temperature of the activation solution in the treating step (b) is in the range from 20° C. to 60° C.;
(c) treating the surface of said substrate obtained from step (b) with a treatment solution comprising
i) at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles, and
ii) at least one reducing agent suitable to reduce the metal ions adsorbed on the surface of said substrate selected from the group consisting of boron based reducing agents, sources of hypophosphite ions, hydrazine and hydrazine derivatives, ascorbic acid, iso-ascorbic acid, sources of formaldehyde, glyoxylic acid, sources of glyoxylic acid, glycolic acid, formic acid, sugars, and salts of aforementioned acids; and wherein the concentration of the at least one reducing agent ranges from 0.1 to 500 mmol/L
(d) treating the surface obtained from step (c) of said substrate with a metallizing solution comprising a solvent and at least one source of metal ions to be deposited such that a metal or metal alloy is deposited thereon; wherein:
when the at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles comprises a thiol, the concentration of the thiol is in the range from 1 ?g/L to 300 ?g/L;
when the at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles comprises a thioether, the concentration of the thioether is in the range from 0.05 mg/L to 20 mg/L;
when the at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles comprises a disulphide, the concentration of the disulphide is in the range from 0.1 ?g/L to 100 ?g/L;
when the at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles comprises a sulphur-containing heterocycle, the concentration of the sulphur-containing heterocycle is in the range from 0.1 ?g/L to 20 mg/L;
when the at least one additive independently selected from the group consisting of thiols, thioethers, disulphides and sulphur containing heterocycles comprises a sulphur-containing heterocycle comprising at least one thiol group, the concentration of the sulphur-containing heterocycle comprising at least one thiol group is in the range from 0.1 ?g/L to 100 ?g/L.
US Pat. No. 10,961,637

METHOD FOR ELECTROLYTICALLY DEPOSITING A ZINC NICKEL ALLOY LAYER ON AT LEAST A SUBSTRATE TO BE TREATED

Atotech Deutschland GmbH,...

1. Method for electrolytically depositing a zinc-nickel alloy layer on at least a substrate to be treated, wherein the method comprises the following method steps:i. providing an electrolysis reaction container comprising at least one soluble zinc anode and at least one soluble nickel anode;
ii. providing an acidic electrolyte comprising at least a zinc ion source and at least a nickel ion source;
iii. filling of the electrolysis reaction container of method step (i) with the acidic electrolyte of method step (ii);
iv. providing at least a substrate to be treated in said electrolysis reaction container, which has been filled with the acidic electrolyte;
v. executing an electrolytical deposition of a zinc-nickel alloy layer on a surface of said substrate to be treated by applying a current from at least an external current source to each of the at least one soluble zinc anode and to each of the at least one soluble nickel anode;
vi. terminating applying the current from said external current source to each of the at least one soluble zinc anode and to each of the at least one soluble nickel anode;
vii. remaining of the at least one soluble zinc anode and the at least one soluble nickel anode in the electrolysis reaction container, which remains filled with the acidic electrolyte comprising at least a zinc ion source and at least a nickel ion source, without executing the electrolytical deposition of the zinc-nickel alloy layer on the surface of said substrate to be treated for a defined period of time in which no current from said external current source is applied to each of the at least one soluble zinc anode and to each of the at least one soluble nickel anode; and
viii. restarting of executing of the electrolytical deposition of a further zinc-nickel alloy layer on the surface of said substrate to be treated by restarting applying the current from said external current source to each of the at least one soluble zinc anode and to each of the at least one soluble nickel anode;
characterized in that
method step (vii) further comprises applying an electrical connection element to form an electrical connection from said at least one soluble zinc anode, which is remaining in the electrolysis reaction container, to said at least one soluble nickel anode, which is remaining in the electrolysis reaction container, for at least a part of the defined period of time, and
wherein the electrical connection element is not the electrolyte.
US Pat. No. 10,858,747

ACIDIC ZINC AND ZINC NICKEL ALLOY PLATING BATH COMPOSITION AND ELECTROPLATING METHOD

Atotech Deutschland GmbH,...

1. An acidic zinc-nickel alloy plating bath composition comprising a source for zinc ions, a source for nickel ions, a source for chloride ions and having a pH value in the range of 2 to 6.5,characterized in that the composition further comprises at least one dithiocarbamyl alkyl sulfonic acid or salt thereof represented by formula (I)
(R1R2)N—C(S)SR3—SO3R4  (I)
wherein
R1 and R2 are independently selected from the group consisting of hydrogen, methyl, ethyl, 1-propyl, 2-propyl, 1-butyl, 2-butyl, and tert-butyl,
R3 is selected from the group consisting of methylene, ethylene, propylene, butylene, pentylene and hexylene and
R4 is selected from the group consisting of hydrogen and a cation,
and the composition is free of polyalkyleneglycols and other alloying metals than zinc and nickel ions,
wherein the concentration of the at least one dithiocarbamyl alkyl sulfonic acid or salt thereof ranges from 0.5 to 100 mg/l; and
wherein the concentration of zinc ions ranges from 5 to 100 g/l, and
wherein the concentration of chloride ions ranges from 70 to 200 g/l.

US Pat. No. 10,832,997

LEAD-FRAME STRUCTURE, LEAD-FRAME, SURFACE MOUNT ELECTRONIC DEVICE AND METHODS OF PRODUCING SAME

Atotech Deutschland GmbH,...

1. A method of producing a lead-frame structure having two faces and exposing a treated silver surface on at least one of said two faces, said method comprising the following method steps carried out in this order:(a) providing a lead-frame body structure having two main sides, said lead-frame body structure exclusively exposing a copper surface on each one of said main sides;
(b) depositing a silver coating on at least one of said main sides, so that said at least one of said main sides at least partially exposes an untreated silver surface; and
(c) electrolytically treating said untreated silver surface on said at least one of said main sides generated in method step (b) with a treatment solution containing at least one hydroxide compound selected from alkali metal hydroxides, alkaline earth metal hydroxides, ammonium hydroxides and mixtures thereof, wherein the lead-frame body structure is a cathode, thereby producing said lead-frame structure which comprises at least two lead-frame entities each one having two faces and at least partially exposing said treated silver surface,characterized in that said at least one of said two faces of at least one of said at least two lead-frame entities either exclusively exposes said treated silver surface orthat said at least one of said two faces of said at least one of said at least two lead-frame entities partially exposes said treated silver surface and partially exposes said copper surface, wherein, on each one of said two faces of each one of said at least two lead-frame entities which partially exposes said treated silver surface, the area of said copper surface is smaller than the area of said treated silver surface.

US Pat. No. 9,526,183

GALVANIC PROCESS FOR FILLING THROUGH-HOLES WITH METALS, IN PARTICULAR OF PRINTED CIRCUIT BOARDS WITH COPPER

Atotech Deutschland GmbH,...

1. Galvanic process for filling through-holes of a workpiece with metals comprising the following steps:
(i) bringing in contact the workpiece containing through-holes with a metal-deposition electrolyte and applying a voltage
between the workpiece and at least one anode so that a current flow is supplied to the workpiece, wherein the current flow
is chosen such that a deposition occurs in the center of the through-holes and, consequently, the through-holes completely
or almost completely grow together;

(ii) further bringing in contact the workpiece with a metal-deposition electrolyte and applying a voltage between the workpiece
and at least one anode so that a current flow is supplied to the workpiece, wherein the through-holes obtained in step (i),
which are divided into to halves are filled by the metal,

wherein the current flow in accordance with step (i) is a pulse reverse current and in every cycle of the current at least
one forward current pulse and at least one reverse current pulse occurs and that the current flow in accordance with step
(ii) is either a pulse reverse current, a direct current or an alternating current, and wherein the ratio of the duration
of the at least one forward current pulse to the duration of the at least one reverse current pulse is adjusted to 5-75.