US Pat. No. 9,986,647

APPARATUS FOR MANUFACTURING ELECTRONIC DEVICES

ABLEGO TECHNOLOGY CO., LT...

1. An apparatus for manufacturing electronic devices, which is connected to an external pressure source, the apparatus comprising:an extended space;
a processing chamber having one or more gas inlets, and one or more gas outlets, wherein the extended space is in communication with the processing chamber, and the gas inlet is connected to the external pressure source;
a temperature regulator fitted in the processing chamber;
a vacuum generator fitted outside the processing chamber and connected to the processing chamber;
a turbo fan having a driving motor, a drive shaft and a turbine propeller, and configured to generate a gas flow passing through the temperature regulator and flowing toward the interior of the processing chamber, wherein the driving motor is provided in the extended space in communication with the processing chamber, the turbine propeller is located in the processing chamber, and the drive shaft connects the driving motor to the turbine propeller; and
a controller configured to:
raise the temperature in the processing chamber to a first predetermined temperature with the temperature regulator;
reduce the pressure in the processing chamber to a first predetermined pressure of vacuum pressure and maintaining the vacuum pressure for a predetermined time period, with the vacuum generator, wherein the first predetermined pressure is between 1.3×10?4 kg/cm2 and about 1.02 kg/cm2;
raise the pressure in the processing chamber to a second predetermined pressure higher than 1 atm and maintaining the second predetermined pressure for a predetermined time period, with the external pressure source, wherein the second predetermined pressure is between 1.3 kg/cm2 and 20 kg/cm2; and
adjust the temperature in the processing chamber to a second predetermined temperature with the temperature regulator and the turbo fan.

US Pat. No. 10,251,281

METHOD FOR MANUFACTURING ELECTRONIC DEVICES

ABLEGO TECHNOLOGY CO., LT...

1. A method for manufacturing electronic devices, comprising:providing a substrate having a first surface;
providing an electronic device having conductive bumps on at least one surface thereof;
mounting the conductive bumps located on at least one surface of the electronic device to the first surface of the substrate so as to form an integrated unit, wherein a pitch between the conductive bumps is less than 100 micrometers, a gap between the electronic device and the substrate is less than 50 micrometers;
applying an capillary underfill to multiple sides of the electronic device, so that the capillary underfill creeps along and fills the gap between the electronic device and the substrate, forming a protection for the conductive bumps;
placing the integrated unit into a processing chamber;
raising the temperature in the processing chamber to a first predetermined temperature;
pre-adjusting the pressure in the processing chamber;
raising the pressure in the processing chamber to a second predetermined pressure higher than 1 atm, and maintaining the second predetermined pressure for a predetermined time period, wherein the second predetermined pressure is between about 1.3 kg/cm2 and 20 kg/cm2; and
adjusting the temperature in the processing chamber to a second predetermined temperature,
wherein the pre-adjusting the pressure in the processing chamber comprises steps of:
(a) reducing the pressure in the processing chamber to a first predetermined pressure of vacuum pressure, and maintaining the first predetermined pressure for a predetermined time period, wherein the first predetermined pressure is between 1.3×10?4 kg/cm2 and about 1.02 kg/cm2; and
(b) raising the pressure in the processing chamber from the first predetermined pressure to a first return pressure, wherein the first return pressure is between 1.5×10?4 kg/cm2 and about 1.03 kg/cm2;
(c) reducing the pressure in the processing chamber to a third predetermined pressure of vacuum pressure, and maintaining the third predetermined pressure for a predetermined time period, wherein the third predetermined pressure is between 1.3×10?4 kg/cm2 and 1.02 kg/cm2; and
(d) raising the pressure in the processing chamber from the third predetermined pressure to a second return pressure, wherein the second return pressure is between 1.5×10?4 kg/cm2 and about 9.3 kg/cm2;
wherein the steps (a) to (d) are carried out one or more times, the second predetermined pressure is higher than the first return pressure, the second predetermined pressure is higher than the second return pressure, the first predetermined pressure is lower than, equal to or higher than the third predetermined pressure, and the first return pressure is lower than, equal to or higher than the second return pressure.